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Sample records for high breakdown voltage

  1. High Voltage Water Breakdown Studies

    DTIC Science & Technology

    1998-01-01

    Terman [20] gives the following equation for a rectangle that has sides that are S1 by S2 and is made up of a rectangular bar that is b by c, L = 0.02339...Dielectrics," Proc. Tenth IEEE Pulsed Power Confer- ence, June, 1995, p. 574. (UNCLASSIFIED) 86 (20) Terman , F. E., Radio Engineers’ Handbook, McGraw-Hill Book...34 Conference Rec- ord, Eighth International Conference on Conduction and Breakdown in Dielectric Liquids, pp. 176-179, July, 1984. Lewis , T. J., High

  2. Determining the mode of high voltage breakdowns in vacuum devices

    SciTech Connect

    Miller, H.C.; Furno, E.J.; Sturtz, J.P.

    1980-08-11

    Devices were constructed which were essentially vacuum diodes equipped with windows allowing observation of high voltage breakdowns. The waveform of the applied voltage was photographed, and the x-ray output was monitored to investigate electrical breakdown in these vacuum diodes. Results indicate that breakdowns may be divided into two types: (1) vacuum (interelectrode) breakdown - characterized by a diffuse moderately bright discharge, a relative slow and smooth voltage collapse, and a large burst of x-rays, and (2) surface (insulator) flashover - characterized by a bright discharge with a very bright filamentary core, a relatively fast and noisy voltage collapse and no x-ray burst. Useful information concerning the type of breakdown in a vacuum device can be obtained by monitoring the voltage (current) waveform and the x-ray output.

  3. High-voltage atmospheric breakdown across intervening rutile dielectrics.

    SciTech Connect

    Williamson, Kenneth Martin; Simpson, Sean; Coats, Rebecca Sue; Jorgenson, Roy Eberhardt; Hjalmarson, Harold Paul; Pasik, Michael Francis

    2013-09-01

    This report documents work conducted in FY13 on electrical discharge experiments performed to develop predictive computational models of the fundamental processes of surface breakdown in the vicinity of high-permittivity material interfaces. Further, experiments were conducted to determine if free carrier electrons could be excited into the conduction band thus lowering the effective breakdown voltage when UV photons (4.66 eV) from a high energy pulsed laser were incident on the rutile sample. This report documents the numerical approach, the experimental setup, and summarizes the data and simulations. Lastly, it describes the path forward and challenges that must be overcome in order to improve future experiments for characterizing the breakdown behavior for rutile.

  4. Modeling of High-voltage Breakdown in Helium

    NASA Astrophysics Data System (ADS)

    Xu, Liang; Khrabrov, Alexander; Kaganovich, Igor; Sommerer, Timothy

    2016-09-01

    We investigate the breakdown in extremely high reduced electric fields (E/N) between parallel-plate electrodes in helium. The left branch of the Paschen curve in the voltage range of 20-350kV and inter-electrode gap range of 0.5-3.5cm is studied analytically and with Monte-Carlo/PIC simulations. The model incorporates electron, ion, and fast neutral species whose energy-dependent anisotropic scattering, as well as backscattering at the electrodes, is carefully taken into account. Our model demonstrates that (1) anisotropic scattering is indispensable for producing reliable results at such high voltage and (2) due to the heavy species backscattered at cathode, breakdown can occur even without electron- and ion-induced ionization of the background gas. Fast atoms dominate in the breakdown process more and more as the applied voltage is increased, due to their increasing ionization cross-section and to the copious flux of energetic fast atoms generated in charge-exchange collisions.

  5. Realizing high breakdown voltages (>600 V) in partial SOI technology

    NASA Astrophysics Data System (ADS)

    Tadikonda, Ramakrishna; Hardikar, Shyam; Sankara Narayanan, E. M.

    2004-09-01

    A combination of uniform and variation in lateral doping (UVLD) profiles is proposed for the drift region of lateral power devices in partial SOI (PSOI) technology in order to achieve breakdown voltages above 600 V. LDMOS transistor structures incorporating the proposed doping profile are analyzed for their electrical characteristics and compared with conventional uniformly doped PSOI and thin layer SOI by extensive 2-D numerical simulations using MEDICI. The results indicate that the proposed doping profile can significantly improve the trade-off between breakdown voltage and specific on-resistance as well as the heat dissipation in comparison to uniformly doped PSOI and thin layer VLD SOI.

  6. High Voltage Discharge Profile on Soil Breakdown Using Impulse Discharge

    NASA Astrophysics Data System (ADS)

    Fajingbesi, F. E.; Midi, N. S.; Elsheikh, E. M. A.; Yusoff, S. H.

    2017-06-01

    Grounding terminals are mandatory in electrical appliance design as they provide safety route during overvoltage faults. The soil (earth) been the universal ground is assumed to be at zero electric potential. However, due to properties like moisture, pH and available nutrients; the electric potential may fluctuate between positive and negative values that could be harmful for internally connected circuits on the grounding terminal. Fluctuations in soil properties may also lead to current crowding effect similar to those seen at the emitters of semiconductor transistors. In this work, soil samples are subjected to high impulse voltage discharge and the breakdown characteristics was profiled. The results from profiling discharge characteristics of soil in this work will contribute to the optimization of grounding protection system design in terms of electrode placement. This would also contribute to avoiding grounding electrode current crowding, ground potential rise fault and electromagnetic coupling faults.

  7. High Voltage Breakdown Levels in Various EPC Potting Materials

    NASA Technical Reports Server (NTRS)

    Komm, David S.

    2006-01-01

    This viewgraph presentation reviews exploration activities at JPL into various potting materials. Since high power space-borne microwave transmitters invariably use a vacuum tube as a final power amplifier, and this tube requires high electrode voltages for operation. The associated high voltage insulation typically represents a significant fraction of the mass of the transmitter. Since mass is always a premium resource on board spacecraft, we have been investigating materials with the potential to reduce the mass required for our applications here at JPL. This paper describes electrical breakdown results obtained with various potting materials. Conathane EN-11 (polyurethane) is the traditional HVPS encapsulant at JPL, but due to temperature limitations and durability issues it was deemed inappropriate for the particular application (i.e., CloudSat radar). The choices for the best available materials were epoxies, or silicones. Epoxies are too rigid, and were deemed inadvisable. Two silicones were further investigated (i.e.,ASTM E595- 93e2: GE RTV566(R) and Dow Corning 93-500X(R), another compound was considered (i.e., DC material, Sylgard 184(R)). "Loading" (adding filler materials) the potting compound will frequently alter the final material properties. Powdered alumina and borosilicate glass known as "microballoons" were investigated as possible loading materials. The testing of the materials is described. Each of the two loading materials offers advantages and disadvantages. The advantages and disadvantages are described.

  8. Measuring Breakdown Voltage.

    ERIC Educational Resources Information Center

    Auer, Herbert J.

    1978-01-01

    The article discusses an aspect of conductivity, one of the electrical properties subdivisions, and describes a tester that can be shop-built. Breakdown voltage of an insulation material is specifically examined. Test procedures, parts lists, diagrams, and test data form are included. (MF)

  9. Measuring Breakdown Voltage.

    ERIC Educational Resources Information Center

    Auer, Herbert J.

    1978-01-01

    The article discusses an aspect of conductivity, one of the electrical properties subdivisions, and describes a tester that can be shop-built. Breakdown voltage of an insulation material is specifically examined. Test procedures, parts lists, diagrams, and test data form are included. (MF)

  10. Ionizing potential waves and high-voltage breakdown streamers.

    NASA Technical Reports Server (NTRS)

    Albright, N. W.; Tidman, D. A.

    1972-01-01

    The structure of ionizing potential waves driven by a strong electric field in a dense gas is discussed. Negative breakdown waves are found to propagate with a velocity proportional to the electric field normal to the wavefront. This causes a curved ionizing potential wavefront to focus down into a filamentary structure, and may provide the reason why breakdown in dense gases propagates in the form of a narrow leader streamer instead of a broad wavefront.

  11. A novel high breakdown voltage lateral bipolar transistor on SOI with multizone doping and multistep oxide

    NASA Astrophysics Data System (ADS)

    Loan, Sajad A.; Qureshi, S.; Iyer, S. S. Kumar

    2009-02-01

    A novel high breakdown voltage lateral bipolar junction transistor (LBJT) on silicon-on- insulator (SOI) is proposed. The novelty of the device is the use of the combination of multistep-doped drift region and multistep buried oxide. The steps in doping and in oxide thickness have been used as a replacement for much complex linearly varying drift doping and linearly varying oxide thickness. The LBJT structure incorporating the combination of multistep doping and multistep oxide is analyzed for electrical characteristics using a two-dimensional numerical simulator MEDICI. Numerical simulation has demonstrated that the breakdown voltage of the proposed device with a two-zone step doped (TZSD) drift region is >150% higher than the conventional device. It has been observed that increasing the number of doping zones to 3 from 2 results in a >40% rise in breakdown voltage. The proposed device gives high breakdown voltage even at high doping concentration in the collector drift region. This reduces the on-resistance of the device and thus improves its speed. The dependence of breakdown voltage on various device parameters has been extensively studied to achieve optimum device performance. A process flow for the device fabrication is also being proposed.

  12. Suppression of Voltage Breakdown in High-Gradient RF Structures

    NASA Astrophysics Data System (ADS)

    Peter, W.; Garate, E.; Shiloh, J.; Mako, F.; Silberglitt, R.

    1996-11-01

    Experimental results of a promising concept for raising the breakdown limit in accelerating structures by the use of semiconducting or insulating cavity coatings are presented. Extensive experimental measurements of various coatings on OFHC Cu electrodes in the dc regime show that electrical breakdown can be increased from a value of 40 MV/m for bare Copper to 115 MV/m for a specially-coated Copper electrode. TiN-coated electrodes at use in the Stanford Linear Accelerator Center (SLAC) were measured to undergo breakdown at 50 MV/m. Dark current levels from our special coatings are over six orders of magnitude less than TiN-coated Copper even after arcing. These coatings can decrease the secondary emission levels, are mechanically stable, are not sensitive to radiation, do not affect the cavity Q, and will not poison the cathode. Hot-tests of coated X-band cavities will be performed in collaboration with SLAC.

  13. Breakdown in helium in high-voltage open discharge with subnanosecond current front rise

    SciTech Connect

    Schweigert, I. V. Alexandrov, A. L.; Bokhan, P. A.; Zakrevskiy, Dm. E.

    2016-07-15

    Investigations of high-voltage open discharge in helium have shown a possibility of generation of current pulses with subnanosecond front rise, due to ultra-fast breakdown development. The open discharge is ignited between two planar cathodes with mesh anode in the middle between them. For gas pressure 6 Torr and 20 kV applied voltage, the rate of current rise reaches 500 A/(cm{sup 2} ns) for current density 200 A/cm{sup 2} and more. The time of breakdown development was measured for different helium pressures and a kinetic model of breakdown in open discharge is presented, based on elementary reactions for electrons, ions and fast atoms. The model also includes various cathode emission processes due to cathode bombardment by ions, fast atoms, electrons and photons of resonant radiation with Doppler shift of frequency. It is shown, that the dominating emission processes depend on the evolution of the discharge voltage during the breakdown. In the simulations, two cases of voltage behavior were considered: (i) the voltage is kept constant during the breakdown; (ii) the voltage is reduced with the growth of current. For the first case, the exponentially growing current is maintained due to photoemission by the resonant photons with Doppler-shifted frequency. For the second case, the dominating factor of current growth is the secondary electron emission. In both cases, the subnanosecond rise of discharge current was obtained. Also the effect of gas pressure on breakdown development was considered. It was found that for 20 Torr gas pressure the time of current rise decreases to 0.1 ns, which is in agreement with experimental data.

  14. Effect of Doppler-shifted photons on subnanosecond breakdown in high-voltage pulse discharge

    SciTech Connect

    Schweigert, I. V.; Alexandrov, A. L.; Zakrevsky, Dm. E.; Bokhan, P. A.

    2016-06-08

    The experiments in high-voltage open discharge in helium [1, 2] showed a controlled current growth rate of 500 A/(cm{sup 2}ns) for an applied voltage of 20 kV and gas pressure of 6 Torr. A kinetic model of the subnanosecond breakdown is developed to analyze the mechanism of current growth, which takes into account the kinetics of electrons, ions, fast atoms and photons with a Doppler shift (DS). DS photons appear in discharge due to collisions of heavy particles. Using particle in cell simulations, we show a critical role of DS photons in the electron emission from the cathode during the breakdown. Our experimental and calculation results show a decrease of the breakdown time with increasing gas pressure from 3 Torr to 16 Torr.

  15. Method of making high breakdown voltage semiconductor device

    DOEpatents

    Arthur, Stephen D.; Temple, Victor A. K.

    1990-01-01

    A semiconductor device having at least one P-N junction and a multiple-zone junction termination extension (JTE) region which uniformly merges with the reverse blocking junction is disclosed. The blocking junction is graded into multiple zones of lower concentration dopant adjacent termination to facilitate merging of the JTE to the blocking junction and placing of the JTE at or near the high field point of the blocking junction. Preferably, the JTE region substantially overlaps the graded blocking junction region. A novel device fabrication method is also provided which eliminates the prior art step of separately diffusing the JTE region.

  16. High-Side nLDMOS Design for Ensuring Over-100 V Breakdown Voltages

    NASA Astrophysics Data System (ADS)

    Sung, Kunsik; Won, Taeyoung

    2011-12-01

    We propose a novel n-channel LDMOSFET(Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor) structure with a breakdown voltage over 100 V under the thermal budget for the conventional 0.35μm BCD process. We varied the gap between the DEEP N-WELL and the center of the source for optimization and the doping concentration under the surface by the NADjusT-layer in an effort to obtain high breakdown voltage and simultaneously the low specific on-resistance. The proposed High-Side n-channel LDMOS exhibits BVdss of 110 V and the specific on-resistance of 2.20 mΩcm2.

  17. Breakdown voltages for discharges initiated from plasma pulses produced by high-frequency excimer lasers

    SciTech Connect

    Yamaura, Michiteru

    2006-06-19

    The triggering ability under the different electric field was investigated using a KrF excimer laser with a high repetition rate of kilohertz order. Measurements were made of the magnitude of impulse voltages that were required to initiate a discharge from plasmas produced by a high-frequency excimer laser. Breakdown voltages were found to be reduced by 50% through the production of plasmas in the discharge gap by a high-frequency excimer laser. However, under direct-current electric field, triggering ability decreased drastically due to low plasma density. It is considered that such laser operation applied for laser-triggered lightning due to the produced location of plasma channel is formed under the impulse electric field since an electric field of the location drastically reduces temporary when the downward leader from thunderclouds propagates to the plasma channel.

  18. Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

    NASA Astrophysics Data System (ADS)

    Jun, Luo; Sheng-Lei, Zhao; Min-Han, Mi; Wei-Wei, Chen; Bin, Hou; Jin-Cheng, Zhang; Xiao-Hua, Ma; Yue, Hao

    2016-02-01

    The effects of gate length LG on breakdown voltage VBR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with LG = 1 μm˜ 20 μm. With the increase of LG, VBR is first increased, and then saturated at LG = 3 μm. For the HEMT with LG = 1 μm, breakdown voltage VBR is 117 V, and it can be enhanced to 148 V for the HEMT with LG = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with LG > 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with LG = 3 μm˜20 μm, and their breakdown voltages are in a range of 140 V-156 V. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61204085).

  19. High ESD Breakdown-Voltage InP HBT Transimpedance Amplifier IC for Optical Video Distribution Systems

    NASA Astrophysics Data System (ADS)

    Sano, Kimikazu; Nagatani, Munehiko; Mutoh, Miwa; Murata, Koichi

    This paper is a report on a high ESD breakdown-voltage InP HBT transimpedance amplifier IC for optical video distribution systems. To make ESD breakdown-voltage higher, we designed ESD protection circuits integrated in the TIA IC using base-collector/base-emitter diodes of InP HBTs and resistors. These components for ESD protection circuits have already existed in the employed InP HBT IC process, so no process modifications were needed. Furthermore, to meet requirements for use in optical video distribution systems, we studied circuit design techniques to obtain a good input-output linearity and a low-noise characteristic. Fabricated InP HBT TIA IC exhibited high human-body-model ESD breakdown voltages (±1000V for power supply terminals, ±200V for high-speed input/output terminals), good input-output linearity (less than 2.9-% duty-cycle-distortion), and low noise characteristic (10.7pA/√Hz averaged input-referred noise current density) with a -3-dB-down higher frequency of 6.9GHz. To the best of our knowledge, this paper is the first literature describing InP ICs with high ESD-breakdown voltages.

  20. Electric breakdown of dielectric thin films for high-voltage display applications

    NASA Astrophysics Data System (ADS)

    Mozolevskis, Gatis; Nitiss, Edgars; Medvids, Arturs

    2016-10-01

    Smectic A liquid crystal is one of the most promising material for smart glass application due to infinite bistability and low haze at clear state. Voltage is needed to switch from scattering to transparent and it is likely for dielectric breakdown to occur. In order to reduce the probability of dielectric breakdown to occur, a dielectric insulating coating is usually employed. In this work we have compared electrical and optical properties of SiO2 thin films with thickness up to 500 nm coated by flexographic printing and reactive magnetron sputtering. IV characteristics and dielectric breakdown values show sputtered coatings to have higher dielectric strength. For sputtered coatings with thickness >240 nm also self-healing effect can be observed.

  1. Design of High Voltage Electrical Breakdown Strength measuring system at 1.8K with a G-M cryocooler

    NASA Astrophysics Data System (ADS)

    Li, Jian; Huang, Rongjin; Li, Xu; Xu, Dong; Liu, Huiming; Li, Laifeng

    2017-09-01

    Impregnating resins as electrical insulation materials for use in ITER magnets and feeder system are required to be radiation stable, good mechanical performance and high voltage electrical breakdown strength. In present ITER project, the breakdown strength need over 30 kV/mm, for future DEMO reactor, it will be greater than this value. In order to develop good property insulation materials to satisfy the requirements of future fusion reactor, high voltage breakdown strength measurement system at low temperature is necessary. In this paper, we will introduce our work on the design of this system. This measuring system has two parts: one is an electrical supply system which provides the high voltage from a high voltage power between two electrodes; the other is a cooling system which consists of a G-M cryocooler, a superfluid chamber and a heat switch. The two stage G-M cryocooler pre-cool down the system to 4K, the superfluid helium pot is used for a container to depress the helium to superfluid helium which cool down the sample to 1.8K and a mechanical heat switch connect or disconnect the cryocooler and the pot. In order to provide the sufficient time for the test, the cooling system is designed to keep the sample at 1.8K for 300 seconds.

  2. Investigation on critical breakdown electric field of hot sulfur hexafluoride/carbon tetrafluoride mixtures for high voltage circuit breaker applications

    NASA Astrophysics Data System (ADS)

    Wang, Weizong; Murphy, Anthony B.; Rong, Mingzhe; Looe, Hui M.; Spencer, Joseph W.

    2013-09-01

    Sulfur hexafluoride (SF6) gas, widely used in high-voltage circuit breakers, has a high global warming potential and hence substitutes are being sought. The use of a mixture of carbon tetrafluoride (CF4) and SF6 is examined here. It is known that this reduces the breakdown voltage at room temperature. However, the electrical breakdown in a circuit breaker after arc interruption occurs in a hot gas environment, with a complicated species composition because of the occurrence of dissociation and other reactions. The likelihood of breakdown depends on the electron interactions with all these species. The critical reduced electric field strength (the field at which breakdown can occur, relative to the number density) of hot SF6/CF4 mixtures corresponding to the dielectric recovery phase of a high voltage circuit breaker is calculated in the temperature range from 300 K to 3500 K. The equilibrium compositions of hot SF6/CF4 mixtures under different mixing fractions were determined based on Gibbs free energy minimization. Full sets of improved cross sections for interactions between electrons and the species present are presented. The critical reduced electric field strength of these mixtures was obtained by balancing electron generation and loss mechanisms. These were evaluated using the electron energy distribution function derived from the Boltzmann transport equation under the two-term approximation. The result indicates that critical electric field strength decreases with increasing heavy-particle temperature from 1500 to 3500 K. Good agreement was found between calculations for pure hot SF6 and pure hot CF4 and experimental results and previous calculations. The addition of CF4 to SF6 was found to increase the critical reduced electric field strength for temperatures above 1500 K, indicating the potential of replacing SF6 by SF6/CF4 mixtures in high-voltage circuit breakers.

  3. New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage

    NASA Astrophysics Data System (ADS)

    Li, Qi; Li, Hai-Ou; Tang, Ning; Zhai, Jiang-Hui; Song, Shu-Xiang

    2015-03-01

    A new SOI power device with multi-region high-concentration fixed charge (MHFC) is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer (BOX), by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS. Project supported by the State Key Laboratory of Electronic Thin Films and Integrated Devices of China (Grant No. KFJJ201205), the Department of Education Project of Guangxi Province, China (Grant No. 201202ZD041), the Postdoctoral Science Foundation Project of China (Grant Nos. 2012M521127 and 2013T60566), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).

  4. High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3

    NASA Astrophysics Data System (ADS)

    Yang, Jiancheng; Ahn, Shihyun; Ren, F.; Pearton, S. J.; Jang, Soohwan; Kim, Jihyun; Kuramata, A.

    2017-05-01

    Vertical geometry Ni/Au-β-Ga2O3 Schottky rectifiers were fabricated on Hydride Vapor Phase Epitaxy layers on conducting bulk substrates, and the rectifying forward and reverse current-voltage characteristics were measured at temperatures in the range of 25-100 °C. The reverse breakdown voltage (VBR) of these β-Ga2O3 rectifiers without edge termination was a function of the diode diameter, being in the range of 920-1016 V (average value from 25 diodes was 975 ± 40 V, with 10 of the diodes over 1 kV) for diameters of 105 μm and consistently 810 V (810 ± 3 V for 22 diodes) for a diameter of 210 μm. The Schottky barrier height decreased from 1.1 at 25 °C to 0.94 at 100 °C, while the ideality factor increased from 1.08 to 1.28 over the same range. The figure-of-merit (VBR2/Ron), where Ron is the on-state resistance (˜6.7 mΩ cm2), was approximately 154.07 MW.cm-2 for the 105 μm diameter diodes. The reverse recovery time was 26 ns for switching from +5 V to -5 V. These results represent another impressive advance in the quality of bulk and epitaxial β-Ga2O3.

  5. High-Voltage Breakdown Penalties for the Beam-Breakup Instability

    SciTech Connect

    Ekdahl, Carl August

    2016-11-22

    The strength of the dangerous beam breakup (BBU) instability in linear induction accelerators (LIAs) is determined by the transverse coupling impedance Z of the induction cell cavity. For accelerating gap width w less than the beam pipe radius b, the transverse impedance is theoretically proportional to w/b, favoring narrow gaps to suppress BBU. On the other hand, cells with narrow gaps cannot support high accelerating gradients, because of electrical breakdown and shorting of the gap. Thus, there is an engineering trade-off between BBU growth and accelerating gradient, which must be considered for next generation LIAs now being designed. In this article this tradeoff is explored, using a simple pillbox cavity as an illustrative example. For this model, widening the gap to reduce the probability of breakdown increases BBU growth, unless higher magnetic focusing fields are used to further suppress the instability.

  6. Breakdown voltage of metal-oxide resistors in liquid argon

    SciTech Connect

    Bagby, L. F.; Gollapinni, S.; James, C. C.; Jones, B. J.P.; Jostlein, H.; Lockwitz, S.; Naples, D.; Raaf, J. L.; Rameika, R.; Schukraft, A.; Strauss, T.; Weber, M. S.; Wolbers, S. A.

    2014-11-07

    We characterized a sample of metal-oxide resistors and measured their breakdown voltage in liquid argon by applying high voltage (HV) pulses over a 3 second period. This test mimics the situation in a HV-divider chain when a breakdown occurs and the voltage across resistors rapidly rise from the static value to much higher values. All resistors had higher breakdown voltages in liquid argon than their vendor ratings in air at room temperature. Failure modes range from full destruction to coating damage. In cases where breakdown was not catastrophic, subsequent breakdown voltages were lower in subsequent measuring runs. One resistor type withstands 131 kV pulses, the limit of the test setup.

  7. Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

    NASA Astrophysics Data System (ADS)

    Yang, Liu; Changchun, Chai; Chunlei, Shi; Qingyang, Fan; Yuqian, Liu

    2016-12-01

    Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/AlGaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID (un-intentionally doped) GaN/AlGaN/GaN HEMT. We calculated and analyzed the distribution of electrons' density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices. Project supported by the National Basic Research Program of China (No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (No. 2015-0214.XY.K).

  8. Field experience with voltage breakdown in photovoltaic (PV) arrays

    NASA Astrophysics Data System (ADS)

    Harrison, T. D.; Fernandez, J. P.

    Information about voltage breakdown of photovoltaic arrays in the field was obtained array sites. The arrays were located at Beverly High School, Lovington Square Shopping Center, Newman Power Station, and the Oklahoma Center for Sciences and Arts. No breakdowns are reported for these sites. Breakdowns at other sites which are attributed to burrs on washers piercing insulation in one instance and delamination of a metal frame causing a short circuit in another are discussed. Other problems not attributable to voltage breakdown are also discussed.

  9. Basic study of transient breakdown voltage in solid dielectric cables

    NASA Astrophysics Data System (ADS)

    Bahder, G.; Sosnowski, M.; Katz, C.

    1980-09-01

    A comprehensive review of the technical and scientific publications relating to crosslinked polyethylene (XLPE) and ethylene propylene rubber (EPR) insulated cables revealed that there is very little known with respect to the life expectancy, the final factory voltage test background and the mechanism of voltage breakdown of these cables. A new methodology for the investigation of breakdown voltages of XLPE and EPR insulated cables was developed which is based on the investigation of breakdown voltages at various voltage transients such as unipolarity pulses and dual-polarity pulses, and a.c. voltage at power and high frequency. Also, a new approach to statistical testing was developed which allows one to establish a correlation among the breakdown voltages obtained with various voltage transients. Finally, a method for the determination of threshold voltage regardless of the magnitude of apparent charge was developed. A model of breakdown and electrical aging of XLPE and EPR insulated cables was developed as well as life expectancy characteristics for high voltage stress XLPE insulated cables operated in a dry environment at room temperature and at 900 C.

  10. Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Agarwal, Anchal; Gupta, Chirag; Enatsu, Yuuki; Keller, Stacia; Mishra, Umesh

    2016-12-01

    Controlled n-type doping down to 2 × 1015 cm-3 was achieved in GaN grown on sapphire by MOCVD by balancing the n-type Si doping with respect to the background carbon and oxygen levels. A dopant level of ˜1 × 1016 cm-3 displayed a very high mobility of 899 cm2 V-1 s-1. High electron mobility in the drift layer leads to a low on resistance and high current densities without compromising on any other properties of the device. Schottky diodes processed on these low n-type layers showed low R on values, while the p-n diodes display high reverse breakdown voltages in excess of 1000 V for 8 μm thick drift layers with a doping of 2 × 1015 cm-3.

  11. Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure

    NASA Astrophysics Data System (ADS)

    Qi, Li; Weidong, Wang; Qiuming, Zhao; Xueming, Wei

    2012-05-01

    A novel silicon double-RESURF LDMOS structure with an improved breakdown characteristic by substrate bias technology (SB) is reported. The P-type epitaxial layer is embedded between an N-type drift region and an N-type substrate to block the conduction path in the off-state and change the distributions of the bulk electric field. The substrate bias strengthens the charge share effect of the drift region near the source, and the vertical electric field peak under the drain is decreased, which is especially helpful in improving the vertical breakdown voltage in a lateral power device with a thin drift region. The numerical results by MEDICI indicate that the breakdown voltage of the proposed device is increased by 97% compared with a conventional LDMOS, while maintaining a lowon-resistance.

  12. Modeling High-Voltage Breakdown for Single- and Multi-stack Dielectric Insulators

    NASA Astrophysics Data System (ADS)

    Aldan, Manuel; Verboncoeur, John; Lau, Y. Y.; Booske, John

    2010-11-01

    Breakdown from DC through microwave in dielectric-insulator configurations with one or more segments will be investigated using an improved 2D PIC simulation model [1]. The goal of this work is to develop the capability to predict and control the breakdown threshold under a wide range of parameters and geometries. Effects considered include secondary-emission [2], space-and surface-charge, ambient and desorbed gas, and surface-plasma generation for single- and multiple-layer [3] insulators with applied fields from DC to THz frequencies. Comparison between simulation and experiment will be conducted where possible. [4pt] [1] Taverniers, S., et al., ICOPS 2009 Proc., 2009.[0pt] [2] Vaughan, J.R.M., IEEE TED, Vol. 36, No. 9, 1989, pp.1963-1967.[0pt] [3] Leopold, J.G., et al., Proc. 2010 PMHVC.

  13. An investigation of breakdown voltage in AMTECs

    NASA Astrophysics Data System (ADS)

    Momozaki, Yoichi; El-Genk, Mohamed S.

    2002-01-01

    Experiments are conducted to investigate the DC electrical breakdown voltage in cesium vapor between two planner molybdenum electrodes, 1.6 cm in diameter, separated by a 0.5 mm gap, and relate the results to the potential electrical breakdown on the cathode side of Alkali Metal Thermal-to-Electric Converters (AMTECs). In the first set of experiments, in which the electrodes are kept at 560 and 650 K, while varying the cesium pressure from 0.71 to 29 Pa, when the cooler electrode is positively biased, breakdown occurs at ~500 V, but at 700 V when the cooler electrode is negatively biased. In the second set of experiments, in which the electrodes are held at 625 and 1100 K and the cesium pressure varied from 1.7 to 235 Pa, when the cooler electrode is positively biased, breakdown voltage is <4 V, but in excess of 400 V when the cooler electrode is negatively biased. Since the first ionization potential and the ionization rate constant of cesium are lower and higher, respectively, than for the sodium (5.14 V) and potassium (4.34 V) vapors in AMTECs, the DC electrical breakdown voltage in an AMTEC is expected to be higher than measured in this work for cesium vapor. .

  14. Resistor networks with distributed breakdown voltages

    NASA Astrophysics Data System (ADS)

    Chan, D. Y. C.; Hughes, B. D.; Paterson, L.; Sirakoff, C.

    1991-03-01

    As a primitive model for structural breakdown in elastic media, we analyze the failure of random resistor-fuse networks with various distributions of properties. We show that variations in breakdown voltage have a more significant effect than variations in resistance values. This is analogous to the fluid-displacement problem [D.Y.C. Chan, B. D. Hughes, L. Paterson, and C. Sirakoff, Phys. Rev. A 38, 4106 (1988)], in which variations in fluid capacity have a greater effect on displacement efficiencies than variations in permeability. An exponential distribution of breakdown voltages creates much more disorder than any uniform distribution, but power-law distributions that emphasize weak bonds can create even greater disorder, up to the percolation limit, in which bonds are broken independently at random.

  15. Investigations of the electrical breakdown properties of insulator materials used in high voltage vacuum diodes

    SciTech Connect

    Shurter, R.P.; Carlson, R.L.; Melton, J.G.

    1993-08-01

    The Injector for the proposed Dual-Axis Radiographic Hydrodynamic Testing (DARHT) Facility at Los Alamos utilizes a monolithic insulator deployed in a radial configuration. The 1.83-m-diam {times} 25.4-cm-thick insulator with embedded grading rings separates the output oil transmission line from the vacuum vessel that contains the re-entrant anode and cathode assemblies. Although much work has been done by the pulse power community in studying surface flash-over of insulating materials used in both axial and radial configurations, dendrite growth at the roots of grading rings embedded in materials suitable for very large insulators is less well characterized. Degradation of several acrylic insulators has been observed in the form of dendrites growing at the roots of the grading rings for large numbers (100`s) of pulses on the prototype DARHT Injector and other machines using similar radial geometries. In a few cases, these dendrites have led to catastrophic bulk breakdown of the acrylic between two grading rings making the insulator a costly loss. Insulating materials under investigation are acrylic (Lucite), epoxy (Furane), and cross-linked polystyrene (Rexolite); each of these materials has its own particular mechanical and electrical merits. All of these materials have been cast and machined into the required large size for the Injector. Test methods and the results of investigations into the breakdown strength of various interface geometries and the susceptibility of these materials to dendrite growth are reported.

  16. High-voltage distributors

    NASA Technical Reports Server (NTRS)

    Mcchesney, J. F., Jr.

    1974-01-01

    Two distributors reduce high-voltage breakdowns and corona discharges. Both distributors are constructed to prevent air traps and facilitate servicing without soldering. Occurrence of coronas is also minimized due to smooth surfaces of device.

  17. Breakdown Voltage Scaling in Gas Bubbles Immersed in Liquid Water

    NASA Astrophysics Data System (ADS)

    Gucker, Sarah; Sommers, Bradley; Foster, John

    2013-09-01

    Radicals produced by the interaction of plasma with liquid water have the capacity to rapidly oxidize organic contaminants. This interaction is currently being investigated as a means to purify water. Direct plasma creation in water typically requires very high voltages to achieve breakdown. Igniting plasma in individual gas bubbles in liquid water on the other hand requires much less voltage. Furthermore, the use of an electrode-less plasma initiation in such bubbles is attractive in that it eliminates electrode erosion thereby circumventing the contamination issue. The breakdown physics of isolated bubbles in liquid water is still poorly understood. In this work, we investigate the relationship between applied voltage for breakdown and the associated pd. This is achieved by locating the breakdown voltage over a range of bubble sizes. This approach allows for the generation of a Paschen-type breakdown curve for isolated bubbles. Such a relationship yields insight into breakdown mechanics and even streamer propagation through water. This material is based upon work supported by the National Science Foundation (CBET 1033141) and the National Science Foundation Graduate Student Research Fellowship under Grant No. DGE 0718128.

  18. Alternating current breakdown voltage of ice electret

    NASA Astrophysics Data System (ADS)

    Oshika, Y.; Tsuchiya, Y.; Okumura, T.; Muramoto, Y.

    2017-09-01

    Ice has low environmental impact. Our research objectives are to study the availability of ice as a dielectric insulating material at cryogenic temperatures. We focus on ferroelectric ice (iceXI) at cryogenic temperatures. The properties of iceXI, including its formation, are not clear. We attempted to obtain the polarized ice that was similar to iceXI under the applied voltage and cooling to 77 K. The polarized ice have a wide range of engineering applications as electronic materials at cryogenic temperatures. This polarized ice is called ice electret. The structural difference between ice electret and normal ice is only the positions of protons. The effects of the proton arrangement on the breakdown voltage of ice electret were shown because electrical properties are influenced by the structure of ice. We observed an alternating current (ac) breakdown voltage of ice electret and normal ice at 77 K. The mean and minimum ac breakdown voltage values of ice electret were higher than those of normal ice. We considered that the electrically weak part of the normal ice was improved by applied a direct electric field.

  19. Voltage Breakdown Limits at a High Material Temperature for Rapid Pulse Heating in a Vacuum

    DTIC Science & Technology

    1999-06-01

    expanding plasma from a previous pulse. One method produces a blow-off plasma through the application of laser power to the surface . This...velocity at the end of the heating pulse is 0.3 ern/us. There may well be some much hotter plasma on the surface produced by the high electric...Kristiansen, "Increasing surface flashover potential using magnetic insulation", Proc. 7th IEEE Pulse Power Conf., p812, (1989) [3] R.E. Tipton, "A 2D

  20. Voltage breakdown limits at a high material temperature for rapid pulse heating in a vacuum

    SciTech Connect

    Pincosy, P A; Speer, R

    1999-06-07

    The proposed Advanced Hydro Facility (AHF) is required to produce multi-pulse radiographs. Electron beam pulse machines with sub-microsecond repetition are not yet available to test the problem of electron beam propagation through the hydro-dynamically expanding plasma from the nearby previously heated target material. A proposed test scenario includes an ohmically heated small volume of target material simulating the electron beam heating, along with an actual electron beam pulse impinging on nearby target material. A pulse power heating circuit was tested to evaluate the limits of pulse heating a small volume of material to tens of kilo-joules per gram. The main pulse heating time (50 to 100 ns) was to simulate the electron beam heating of a converter target material. To avoid skin heating non-uniformity a longer time scale pulse of a few microseconds first heats the target material to a few thousand degrees near the liquid to vapor transition. Under this state the maximum electric field that the current carrying conductor can support is the important parameter for insuring that the 100 ns heating pulse can deposit sufficient power. A small pulse power system was built for tests of this limit. Under cold conditions the vacuum electric field hold-off limit has been quoted as high as many tens of kilovolts per centimeter. The tests for these experiments found that the vacuum electric field hold-off was limited to a few kilovolts per centimeter when the material approached melting temperatures. Therefore the proposed test scenario for AHF was not achievable.*

  1. Design and simulation of high-breakdown-voltage GaN-based vertical field-effect transistor with interfacial charge engineering

    NASA Astrophysics Data System (ADS)

    Du, Jiangfeng; Liu, Dong; Bai, Zhiyuan; Luo, Qian; Yu, Qi

    2016-05-01

    A high-breakdown-voltage GaN-based vertical field-effect transistor with negative fixed interfacial charge engineering (GaN ICE-VHFET) is proposed in this work. The negative charge inverts an n-GaN buffer layer along the oxide/GaN interface, inducing a vertical hole layer. Thus, the entire buffer layer consists of a p+-hole inversion layer and an n-pillar buffer layer, and the p-pillar laterally depletes the n-GaN buffer layer, and the electric field distribution becomes more uniform. Simulation results show that the breakdown voltage of the GaN ICE-VHFET increases by 193% and the on-resistance of such a device is still very low when compared with those of conventional vertical FETs. Its figure of merit even exceeds the GaN one-dimensional limit.

  2. Simulation of High-Voltage DC Breakdown for Angled Dielectric Insulators including Space-Charge and Gas-Collision Effects

    NASA Astrophysics Data System (ADS)

    Aldan, Manuel; Verboncoeur, John

    2012-10-01

    We report on 2D Particle-In-Cell (PIC) simulations of a semi-infinite, angled-dielectric Bergeron geometry with steady-state fields in background gas. The goal of this work is to develop the tools to predict and control breakdown under a wide range of parameters. We extend results in [1] with an improved PIC model [2], which includes the effects of space charge and particle distributions, enhanced secondary-emission modeling from metals and dielectrics [3], multiple electrodes, triple-point emission [4], and dielectric-surface outgassing. Breakdown voltage as a function of dielectric angle will be presented taking care to distinguish dominant effects in specific pressure regimes. Very low pressures (vacuum thru ˜100 mTorr) are dominated by multipactor avalanche while ionization and surface-charging at increased pressure (>1 Torr) drive space-charge-coupled oscillations.[4pt] [1] Jordan, N.M., et al., J. Appl. Phys., 102, 2007.[0pt] [2] Taverniers, S., et al., ICOPS 2009 Proceedings, 2009.[0pt] [3] Vaughan, J.R.M., IEEE Trans. Electron Dev., Vol. 36, No. 9, 1989, pp. 1963-1967.[0pt] [4] L. Sch"achter, Appl. Phys. Lett., Vol. 72, No. 4, pp. 421-423, 1998.

  3. Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance

    NASA Astrophysics Data System (ADS)

    Zhou, Qi; Chen, Hongwei; Zhou, Chunhua; Feng, Zhihong; Cai, Shujun; Chen, Kevin J.

    2012-04-01

    In this work, we present a novel device technology of using Schottky source/drain (SSD) in InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) for off-state breakdown voltage VBD improvement. The Schottky source/drain design can effectively prevent the source carrier injection compared to the conventional MISHEMTs, leading to enhanced VBD in the SSD MISHEMTs. A VBD of 460 V is obtained in an InAlN/GaN SSD MISHEMTs with low specific Ron of 2.27 mΩ·cm2, at a 170% VBD improvement compared to conventional MISHEMTs. Despite the Schottky source/drain used, a SSD MISHEMT with a gate length of 1 µm exhibits respectable drain current density of 416 mA/mm and transconductance of 113 mS/mm.

  4. Experimental Investigation of Breakdown Voltage and Electrical Breakdown Time Delay of Commercial Gas Discharge Tubes

    NASA Astrophysics Data System (ADS)

    Pejović, Milić Momčilo; Pejović, Momčilo Milić; Stanković, Koviljka

    2011-08-01

    This article presents the experimental results of DC dynamic breakdown voltage Ub for small voltage increase rates and electrical breakdown time delay td of commercial gas discharge tubes. It was shown that Ub is a stochastic value with Gauss distribution for voltage increase rates ≥2 V/s. In order to determine the static breakdown voltage Us as a deterministic quantity, the mean values of the dynamic breakdown voltage \\bar{U}b as a function of voltage increase rate k were extrapolated until the intersection with \\bar{U}b axis using linear fit. The intersection point (for k = 0) correspond to Us value. Additional experiments were performed in order to verify the temperature stability of these components over the wide temperature range from 25 to 250 °C. The experimental results of electrical breakdown time delay are also presented in the paper. Electrical breakdown time delay if often refereed as delay response and it is also very important parameter of gas filled devices. It was shown when the voltage higher then 310 V is applied to those components, the mean value of electrical breakdown time delay \\bar{t}d insignificantly varies to the value of relaxation time τ≈ 1 s, while the breakdown probability is close to one for the voltages higher then 380 V. These facts show that the commercial gas discharge tubes are very reliable for the protection for voltages higher then 380 V.

  5. Multi-layer insulator for low voltage and breakdown voltage enhancement in electrowetting-on-dielectric

    NASA Astrophysics Data System (ADS)

    Grisatya, Anggita; Won, Yong Hyub

    2014-03-01

    Low applied voltage in electrowetting-on-dielectric (EWOD) can be achieved using thin dielectric. However it is followed by high possibility of dielectric failure. On the other hand, multi-layer dielectric has been known as a way to enhance the dielectric reliability by delaying the dielectric breakdown. In this paper, we report a modified structure of multi-layer insulator called sandwich-like multi-layer structure. This structure is built by dividing one layer into two sections and inserting the other layer between them, resulting a stack with an additional layer but identical in thickness with the conventional multi-layer structure. Using Parylene C and Aluminum Oxide (Al2O3), sandwich-like multi-layer structure shows an improvement in dielectric reliability by delaying the occurrence of dielectric breakdown without sacrificing the operational voltage. Dielectric breakdown is investigated by observing the bubbles forming during electrowetting test caused by electrolysis.

  6. The electrical breakdown characteristics of oil-paper insulation under steep front impulse voltages

    SciTech Connect

    Vandermaar, A.J.; Wang, M.; Neilson, J.B. ); Srivastava, K.D. )

    1994-10-01

    Disconnecting switch operations in gas insulated equipment cause transient voltages with rise times as steep as 5 to 20 nanoseconds and magnitudes as high as 2.5 pu. There is very little information on the effect of these transients on oil-paper insulated equipment. There have been reports, however of transformer and bushing failures caused by these transients. The electrical breakdown characteristics of oil-paper insulation under steep front impulse were studied in this project, which was co-sponsored by the Canadian Electrical Association and B.C. Hydro. V[sub 50] (50% breakdown probability voltage) breakdown data was obtained with steep front (10 ns/2500 [mu]s), lightning and switching impulse waveforms. Insulation breakdown voltage vs breakdown time (V-t) data and multiple impulse breakdown data were obtained with the steep front impulse waveform. The V[sub 50] results showed that the breakdown strengths were lower for steep front impulses than for lightning impulses. The multiple impulse breakdown results showed that oil-paper insulation breakdown strength can be lower than 100 kV/mm. These results are alarming, since they suggest that oil-paper insulated equipment subjected to steep front transients will fail at voltages below the lightning impulse design level (BIL). The Volt-time data had a discontinuity. The breakdown process at risetime below about 50 ns was different from the breakdown process at rise times above 50 ns.

  7. Inner surface flash-over of insulator of low-inductance high-voltage self-breakdown gas switch and its application

    SciTech Connect

    Zhang, Hong-bo Liu, Jin-liang

    2014-04-15

    In this paper, the inner surface flash-over of high-voltage self-breakdown switch, which is used as a main switch of pulse modulator, is analyzed in theory by employing the method of distributed element equivalent circuit. Moreover, the field distortion of the switch is simulated by using software. The results of theoretical analysis and simulation by software show that the inner surface flash-over usually starts at the junction points among the stainless steel, insulator, and insulation gas in the switch. A switch with improved structure is designed and fabricated according to the theoretical analysis and simulation results. Several methods to avoid inner surface flash-over are used to improve the structure of switch. In experiment, the inductance of the switch is no more than 100 nH, the working voltage of the switch is about 600 kV, and the output voltage and current of the accelerator is about 500 kV and 50 kA, respectively. And the zero-to-peak rise time of output voltage at matched load is less than 30 ns due to the small inductance of switch. The original switch was broken-down after dozens of experiments, and the improved switch has been worked more than 200 times stably.

  8. Inner surface flash-over of insulator of low-inductance high-voltage self-breakdown gas switch and its application.

    PubMed

    Zhang, Hong-Bo; Liu, Jin-liang

    2014-04-01

    In this paper, the inner surface flash-over of high-voltage self-breakdown switch, which is used as a main switch of pulse modulator, is analyzed in theory by employing the method of distributed element equivalent circuit. Moreover, the field distortion of the switch is simulated by using software. The results of theoretical analysis and simulation by software show that the inner surface flash-over usually starts at the junction points among the stainless steel, insulator, and insulation gas in the switch. A switch with improved structure is designed and fabricated according to the theoretical analysis and simulation results. Several methods to avoid inner surface flash-over are used to improve the structure of switch. In experiment, the inductance of the switch is no more than 100 nH, the working voltage of the switch is about 600 kV, and the output voltage and current of the accelerator is about 500 kV and 50 kA, respectively. And the zero-to-peak rise time of output voltage at matched load is less than 30 ns due to the small inductance of switch. The original switch was broken-down after dozens of experiments, and the improved switch has been worked more than 200 times stably.

  9. The effect of external visible light on the breakdown voltage of a long discharge tube

    NASA Astrophysics Data System (ADS)

    Shishpanov, A. I.; Ionikh, Yu. Z.; Meshchanov, A. V.

    2016-06-01

    The breakdown characteristics of a discharge tube with a configuration typical of gas-discharge light sources and electric-discharge lasers (a so-called "long discharge tube") filled with argon or helium at a pressure of 1 Torr have been investigated. A breakdown has been implemented using positive and negative voltage pulses with a linear leading edge having a slope dU/ dt ~ 10-107 V/s. Visible light from an external source (halogen incandescent lamp) is found to affect the breakdown characteristics. The dependences of the dynamic breakdown voltage of the tube on dU/ dt and on the incident light intensity are measured. The breakdown voltage is found to decrease under irradiation of the high-voltage anode of the tube in a wide range of dU/ dt. A dependence of the effect magnitude on the light intensity and spectrum is obtained. Possible physical mechanisms of this phenomenon are discussed.

  10. Basic study of transient breakdown voltage in solid dielectric cables. Final report

    SciTech Connect

    Bahder, G.; Sosnowski, M.; Katz, C.

    1980-09-01

    A comprehensive review of the technical and scientific publications relating to crosslinked polyethylene (XLPE) and ethylene propylene rubber (EPR) insulated cables revealed that there is very little known with respect to the life expectancy, the final factory voltage test background and the mechanism of voltage breakdown of these cables. In this study a new methodology for the investigation of breakdown voltages of XLPE and EPR insulated cables was developed which is based on the investigation of breakdown voltages at various voltage transients such as unipolarity pulses and dual-polarity pulses, and a.c. voltage at power and high frequency. Also, a new approach to statistical testing was developed which allows one to establish a correlation among the breakdown voltages obtained with various voltage transients. Finally, a method for the determination of threshold voltage regardless of the magnitude of apparent charge was developed. Extensive statistical testing of breakdown voltages was conducted using: impulses with front durations from approximately 1.5 to 1000 ..mu..s and times to half-values from 40 to 3000 ..mu..s; dual-polarity pulses consisting of d.c. voltage and standard impulse of opposite polarity; combined a.c. and d.c. voltages; and a.c. voltages at power and high frequencies. Based on the results of this testing, a model of breakdown and electrical aging of XLPE and EPR insulated cables was developed as well as life expectancy characteristics for high voltage stress XLPE insulated cables operated in a dry environment at room temperature and at 90/sup 0/C. Life expectancy characteristics for EPR insulated cables are approximated. A test procedure including requirements for full-reel factory voltage withstand and partial discharge testing of finished XLPE and EPR insulated cables is proposed. Cables that pass the proposed tests will exhibit a smaller rate of failure in service than cables tested in accordance with present practices.

  11. Breakdown voltage of discrete capacitors under single-pulse conditions

    NASA Technical Reports Server (NTRS)

    Domingos, H.; Scaturro, J.; Hayes, L.

    1981-01-01

    For electrostatic capacitors the breakdown voltage is inherently related to the properties of the dielectric, with the important parameters being the dielectric field strength which is related to the dielectric constant and the dielectric thickness. These are not necessarily related to the capacitance value and the rated voltage, but generally the larger values of capacitance have lower breakdown voltages. Foil and wet slug electrolytics can withstand conduction currents pulses without apparent damage (in either direction for foil types). For solid tantalums, damage occurs whenever the capacitor charges to the forming voltage.

  12. DC conduction and breakdown characteristics of Al2O3/cross-linked polyethylene nanocomposites for high voltage direct current transmission cable insulation

    NASA Astrophysics Data System (ADS)

    Park, Yong-Jun; Kwon, Jung-Hun; Sim, Jae-Yong; Hwang, Ju-Na; Seo, Cheong-Won; Kim, Ji-Ho; Lim, Kee-Joe

    2014-08-01

    We have discussed a cross-linked polyethylene (XLPE) nanocomposite insulating material that is able to DC voltage applications. Nanocomposites, which are composed in polymer matrix mixed with nano-fillers, have received considerable attention because of their potential benefits as dielectrics. The nano-sized alumina oxide (Al2O3)/XLPE nanocomposite was prepared, and three kinds of test, such as DC breakdown, DC polarity reversal breakdown, and volume resistivity were performed. By the addition of nano-sized Al2O3 filler, both the DC breakdown strength and the volume resistivity of XLPE were increased. A little homogeneous space charge was observed in Al2O3/XLPE nanocomposite material in the vicinity of electrode through the polarity reversal breakdown test. From these results, it is thought that the addition of Al2O3 nano-filler is effective for the improvement of DC electrical insulating properties of XLPE.

  13. Study of the breakdown voltage of SiPMs

    NASA Astrophysics Data System (ADS)

    Chmill, V.; Garutti, E.; Klanner, R.; Nitschke, M.; Schwandt, J.

    2017-02-01

    The breakdown behaviour of SiPMs (Silicon PhotoMultiplier) with pixel sizes of 15 × 15 , 25 × 25 , 50 × 50, and 100 × 100 μm2, manufactured by KETEK, has been investigated. From the current-voltage characteristics measured with and without illumination by LED light of 470 nm wavelength, the current-breakdown voltage, VI, and from linear fits of the voltage dependence of the SiPM gain, measured by recording pulse-area spectra, the gain-breakdown voltage, VG, have been obtained. The voltage dependence of the Geiger-breakdown probability was determined from the fraction of zero photoelectron events with LED illumination. By comparing the results to a model calculation, the photodetection-breakdown voltage, VPD, has been determined. Within experimental uncertainties, VI and VPD are equal and independent of pixel size. For VG, a dependence on pixel size is observed. The difference VI -VG is about 1 V for the SiPM with 15 μm pixels, decreases with pixel size and is compatible with zero for the SiPM with 100 μm pixels.

  14. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    SciTech Connect

    Xue, JunShuai Zhang, JinCheng; Hao, Yue

    2016-01-04

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm{sup 2}/V s along with a sheet carrier density of 1.88 × 10{sup 13 }cm{sup −2} were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  15. On the influence of high voltage slope steepness on breakdown and development of pulsed dielectric barrier discharges

    NASA Astrophysics Data System (ADS)

    Höft, H.; Becker, M. M.; Loffhagen, D.; Kettlitz, M.

    2016-12-01

    The influence of the steepness of the applied high voltage (HV) waveform on the characteristics of pulsed dielectric barrier discharges (DBDs) is investigated using a single-filament arrangement with 1 mm gap in 0.1 vol% O2 in N2 at atmospheric pressure. The slope steepness was varied between 75 V ns-1 and 200 V ns-1. The discharge development was recorded with a combined iCCD and streak camera system accompanied by electrical measurements. The analysis was supported by time-dependent, spatially one-dimensional fluid model calculations. A steeper HV slope leads to a higher transferred charge and electrical energy per cycle. The DBD emission structure in the gap features a shorter ‘dark space’ in front of the cathode for steeper HV pulses. The starting velocity of the positive streamer-like propagation at the rising slope of the HV pulses increases with increasing slope steepness, but without influencing the maximal velocity in front of the cathode. At the falling slope, however, smaller propagation velocities for steeper pulses were measured. The modelling results and the measurements of the emission during the pre-phase suggest that the elevated pre-ionisation and higher electrical energy for steeper HV slopes is responsible for most of the observed effects.

  16. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

    SciTech Connect

    Sun, Shichuang; Fu, Kai E-mail: cqchen@mail.hust.edu.cn; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Li, Shuiming; Sun, Qian; Cai, Yong; Zhang, Baoshun; Qi, Zhiqiang; Dai, Jiangnan; Chen, Changqing E-mail: cqchen@mail.hust.edu.cn

    2016-01-04

    This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal–organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 10{sup 14} cm{sup −2}) and 90 keV (dose: 1 × 10{sup 14} cm{sup −2}), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I{sub DSmax} at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance g{sub mmax} was 83 mS/mm.

  17. Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

    NASA Astrophysics Data System (ADS)

    Visalli, Domenica; Van Hove, Marleen; Srivastava, Puneet; Derluyn, Joff; Das, Johan; Leys, Maarten; Degroote, Stefan; Cheng, Kai; Germain, Marianne; Borghs, Gustaaf

    2010-09-01

    The breakdown mechanism in GaN-based heterostructures (HFETs) grown on silicon substrate is investigated in detail by TCAD simulations and silicon substrate removal technique. High-voltage electrical measurements show that the breakdown voltage saturates for larger gate-drain distances. This failure mechanism is dominated by the avalanche breakdown in the Si substrate. High-voltage TCAD simulations of AlGaN/GaN/Si substrate structures show higher impact ionization factor and electron density at the Si interface indicating a leakage current path where avalanche breakdown occurs. Experimentally, by etching off the Si substrate the breakdown voltage no longer saturates and linearly increases for all gate-drain gaps. We propose the silicon removal technique as a viable way to enhance the breakdown voltage of AlGaN/GaN devices grown on Si substrate.

  18. High voltage breakdown studies of sol-gel MgO-ZrO 2 insulation coatings under various pressures at 298 K and 77 K

    NASA Astrophysics Data System (ADS)

    Cakiroglu, O.; Arda, L.; Hascicek, Y. S.

    2005-06-01

    High voltage breakdown (HV bd) tests were performed to investigate electrical properties of high temperature MgO-ZrO 2 insulation coatings on long-length stainless steel (SS) tapes under various pressures at room temperature (298 K) and liquid nitrogen temperature (77 K) for applications of HTS/LTS coils and magnets. After solutions were prepared from Mg and Zr based precursors, solvent and chelating agent, the coating were fabricated on SS substrates using reel-to-reel sol-gel technique. Coating thicknesses for 4, 8, and 9 dippings were about 7, 12, and 13 μm, respectively, and thickness of epoxy-impregnated samples (stycast 2850 FT/24 LV) were measured to be 32 μm. The pressure from 0 GPa to 0.54 GPa was applied on to test couples, the stycast thicknesses between the layers were varied 32-20 μm. Thickness of the coatings and epoxy-impregnated using stycast were determined by using environmental scanning electron microscopy (ESEM). The resistance, capacitance, and HV bd of the samples were measured by using standard machines HP 439 a high resistance meter, 161 analog digital capacitance meter and model 200-02R high voltage power supply, respectively. Electric strength and dielectric constant were calculated at 298 and 77 K under various pressures. The high HV bd, and electric strength values of the samples were 2.84 kV and 45.91 kV/mm, respectively. ESEM observation revealed that arcing spots in the insulation coatings become larger and deeper for higher HV bd’s.

  19. AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f{sub max} as high as 100 GHz

    SciTech Connect

    Mokerov, V. G. Kuznetsov, A. L.; Fedorov, Yu. V.; Bugaev, A. S.; Pavlov, A. Yu.; Enyushkina, E. N.; Gnatyuk, D. L.; Zuev, A. V.; Galiev, R. R.; Ovcharenko, E. N.; Sveshnikov, Yu. N.; Tsatsulnikov, A. F.; Ustinov, V. M.

    2009-04-15

    The N-Al{sub 0.27}Ga{sub 0.73}N/GaN High Electron Mobility Transistors (HEMTs) with different gate lengths L{sub g} (ranging from 170 nm to 0.5 {mu}m) and gate widths W{sub s} (ranging from 100 to 1200 {mu}m) have been studied. The S parameters have been measured; these parameters have been used to determine the current-gain cutoff frequency f{sub t}, the maximum oscillation frequency f{sub max}, and the power gain MSG/MAG and Mason's coefficients were investigated in the frequency range from 10 MHz to 67 GHz in relation to the gate length and gate width. It was found that the frequencies f{sub t} and f{sub max} attain their maximum values of f{sub t} = 48 GHz and f{sub max} = 100 GHz at L{sub g} = 170 nm and W{sub g} = 100 {mu}m. The optimum values of W{sub g} and output power P out of the basic transistors have been determined for different frequencies of operation. It has also been demonstrated that the 170 nm Al{sub 0.27}Ga{sub 0.73}N/GaN HEMT technology provides both good frequency characteristics and high breakdown voltages and is very promising for high-frequency applications (up to 40 GHz)

  20. Precise method for determining avalanche breakdown voltage of silicon photomultipliers

    NASA Astrophysics Data System (ADS)

    Chirikov-Zorin, I.

    2017-07-01

    A physically motivated method is proposed for determining the avalanche breakdown voltage of silicon photomultipliers (SiPM). The method is based on measuring the dependence of the relative photon detection efficiency (PDErel) on the bias voltage when one type of carriers (electron or hole) is injected into the avalanche multiplication zone of the p-n junction. The injection of electrons or holes from the base region of the SiPM semiconductor structure is performed using short-wave or long-wave light. At a low overvoltage (1-2 V) the detection efficiency is linearly dependent on the bias voltage; therefore, extrapolation to zero PDErel value determines the SiPM avalanche breakdown voltage with an accuracy within a few millivolts.

  1. Ion behavior and interelectrode breakdown voltage of a drift tube

    NASA Astrophysics Data System (ADS)

    Geng, Hao; Zhao, Zhong-Jun; Duan, Yi-Xiang

    2015-05-01

    We experimentally studied ion behavior and interelectrode breakdown voltage. The ion behavior of a drift tube directly influences the detection of ion intensity, and then influences the detection sensitivity of a system. Interelectrode voltage and pressure directly influence the ion behavior. Gas discharge between electrodes influences the adjustments required for interelectrode voltage. The experimental results show: ion intensity increases exponentially with the increment of voltage between drift electrodes; ion intensity decreases exponentially as pressure increases; with the increment of pressure, the breakdown voltage at first decreases, and then increases; ion injection has a significant influence on breakdown voltage, and this influence depends on the pressure and shapes of the electrodes. We explain the results above through assumptions and by mathematical methods. Supported by Financial Support from the National Major Scientific Instruments and Equipment Development Special Funds (2011YQ030113), National Recruitment Program of Global Experts (NRPGE), the Hundred Talents Program of Sichuan Province (HTPSP) and the Startup Funding of Sichuan University for Setting up the Research Center of Analytical Instrumentation

  2. Breakdown phenomena in high power klystrons

    SciTech Connect

    Vlieks, A.E.; Allen, M.A.; Callin, R.S.; Fowkes, W.R.; Hoyt, E.W.; Lebacqz, J.V.; Lee, T.G.

    1988-03-01

    In the course of developing new high peak power klystrons at SLAC, high electric fields in several regions of these devices have become an important source of vacuum breakdown phenomena. In addition, a renewed interest in breakdown phenomena for nanosecond pulse, multi-megavolt per centimeter fields has been sparked by recent R and D work in the area of gigawatt RF sources. The most important regions of electrical breakdown are in the output cavity gap area, the RF ceramic windows, and the gun ceramic insulator. The details of the observed breakdown in these regions, experiments performed to understand the phenomena and solutions found to alleviate the problems will be discussed. Recently experiments have been performed on a new prototype R and D klystron. Peak electric fields across the output cavity gaps of this klystron exceed 2 MV/cm. The effect of peak field duration (i.e. pulse width) on the onset of breakdown have been measured. The pulse widths varied from tens of nanoseconds to microseconds. Results from these experiments will be presented. The failure of ceramic RF windows due to multipactor and puncturing was an important problem to overcome in order that our high power klystrons would have a useful life expectancy. Consequently many studies and tests were made to understand and alleviate window breakdown phenomena. Some of the results in this area, especially the effects of surface coatings, window materials and processing techniques and their effects on breakdown will be discussed. Another important source of klystron failure in the recent past at SLAC has been the puncturing of the high voltage ceramic insulator in the gun region. A way of alleviating this problem has been found although the actual cause of the puncturing is not yet clear. The ''practical'' solution to this breakdown process will be described and a possible mechanism for the puncturing will be presented. 9 refs., 5 figs., 3 tabs.

  3. The Significance of Breakdown Voltages for Quality Assurance of Low-Voltage BME Ceramic Capacitors

    NASA Technical Reports Server (NTRS)

    Teverovsky, Alexander A.

    2014-01-01

    Application of thin dielectric, base metal electrode (BME) ceramic capacitors for high-reliability applications requires development of testing procedures that can assure high quality and reliability of the parts. In this work, distributions of breakdown voltages (VBR) in variety of low-voltage BME multilayer ceramic capacitors (MLCCs) have been measured and analyzed. It has been shown that analysis of the distributions can indicate the proportion of defective parts in the lot and significance of the defects. Variations of the distributions after solder dip testing allow for an assessment of the robustness of capacitors to soldering-related stresses. The drawbacks of the existing screening and qualification methods to reveal defects in high-value, low-voltage MLCCs and the importance of VBR measurements are discussed. Analysis has shown that due to a larger concentration of oxygen vacancies, defect-related degradation of the insulation resistance (IR) and failures are more likely in BME compared to the precious metal electrode (PME) capacitors.

  4. Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

    NASA Astrophysics Data System (ADS)

    Dalla Betta, G.-F.; Ayllon, N.; Boscardin, M.; Hoeferkamp, M.; Mattiazzo, S.; McDuff, H.; Mendicino, R.; Povoli, M.; Seidel, S.; Sultan, D. M. S.; Zorzi, N.

    2016-09-01

    We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both the design and the fabrication technology for use at future hadron colliders such as the High Luminosity LHC. Several 3D diode samples of different technologies and layout are considered, as well as several irradiations with different particle types. While the leakage current follows the expected linear trend with radiation fluence, the breakdown voltage is found to depend on both the bulk damage and the surface damage, and its values can vary significantly with sensor geometry and process details.

  5. Effects of load voltage on voltage breakdown modes of electrical exploding aluminum wires in air

    SciTech Connect

    Wu, Jian; Li, Xingwen Yang, Zefeng; Wang, Kun; Chao, Youchuang; Shi, Zongqian; Jia, Shenli; Qiu, Aici

    2015-06-15

    The effects of the load voltage on the breakdown modes are investigated in exploding aluminum wires driven by a 1 kA, 0.1 kA/ns pulsed current in air. From laser probing images taken by laser shadowgraphy, schlieren imaging, and interferometry, the position of the shockwave front, the plasma channel, and the wire core edge of the exploding product can be determined. The breakdown mode makes a transition from the internal mode, which involves breakdown inside the wire core, to the shunting mode, which involves breakdown in the compressed air, with decreasing charging voltage. The breakdown electrical field for a gaseous aluminum wire core of nearly solid density is estimated to be more than 20 kV/cm, while the value for gaseous aluminum of approximately 0.2% solid density decreases to 15–20 kV/cm. The breakdown field in shunting mode is less than 20 kV/cm and is strongly affected by the vaporized aluminum, the desorbed gas, and the electrons emitted from the wire core during the current pause. Ohmic heating during voltage collapses will induce further energy deposition in the current channel and thus will result in different expansion speeds for both the wire core and the shockwave front in the different modes.

  6. Breakdown Characteristic Analysis of Paper- Oil Insulation under AC and DC Voltage

    NASA Astrophysics Data System (ADS)

    Anuar, N. F.; Jamail, N. A. M.; Rahman, R. A.; Kamarudin, M. S.

    2017-08-01

    This paper presents the study of breakdown characteristic of Kraft paper insulated with two different types of insulating fluid, which are Palm oil and Coconut oil. Palm oil and Coconut oil are chosen as the alternative fluid to the transformer oil because it has high potential and environmentally-friendly. The Segezha Kraft papers with various thicknesses (65.5 gsm, 75 gsm, 85gsm, 90 gsm) have been used in this research. High Voltage Direct Current (HVDC), High Voltage Alternating Current (HVAC) and carbon track and severity analysis is conducted to observe the sample of aging Kraft paper. These samples have been immersed using Palm oil and Coconut oil up to 90 days to observe the absorption rate. All samples started to reach saturation level at 70 days of immersion. HVDC and HVAC breakdown experiments have been done after the samples had reached the saturation level based on normal condition, immersed in Palm oil and immersed in Coconut oil. All samples immersed in liquid show different breakdown voltage reading compared to normal condition. The analysis of carbon track and severity on surface has been done using Analytical Scanning Electron Microscope (SEM) Analysis. The results of the experiment show that the sample of Kraft paper immersed in Palm oil was better than Coconut oil immersed sample. Therefore the sample condition was the main factor that determines the value of breakdown voltage test. Introduction

  7. Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

    NASA Astrophysics Data System (ADS)

    Chabak, Kelson D.; Moser, Neil; Green, Andrew J.; Walker, Dennis E.; Tetlak, Stephen E.; Heller, Eric; Crespo, Antonio; Fitch, Robert; McCandless, Jonathan P.; Leedy, Kevin; Baldini, Michele; Wagner, Gunter; Galazka, Zbigniew; Li, Xiuling; Jessen, Gregg

    2016-11-01

    Sn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate. The fin channels have a triangular cross-section and are approximately 300 nm wide and 200 nm tall. FinFETs, with 20 nm Al2O3 gate dielectric and ˜2 μm wrap-gate, demonstrate normally-off operation with a threshold voltage between 0 and +1 V during high-voltage operation. The ION/IOFF ratio is greater than 105 and is mainly limited by high on-resistance that can be significantly improved. At VG = 0, a finFET with 21 μm gate-drain spacing achieved a three-terminal breakdown voltage exceeding 600 V without a field-plate.

  8. Diamond-shaped body contact for on-state breakdown voltage improvement of SOI LDMOSFET

    NASA Astrophysics Data System (ADS)

    Daghighi, Arash; Hematian, Hadi

    2017-03-01

    In this paper, we report a diamond-shaped body contact (DSBC) for silicon-on-insulator (SOI) LDMOSFET. Several DSBC devices along with conventional body contact (CBC) structures are laid out using 0.35 μm SOI MOSFET foundry process. The DSBC device is designed using the same standard layers as in the CBC structure and the contact layout is adapted to process design rules. Experimental characterization of the CBC and DSBC devices in terms of off-state breakdown voltage (BVoff), on-state breakdown voltage (BVon), on-resistance (Ron) and device foot print showed 19% improvement in BVon compared DSBC device with that of the CBC structure. BVoff and Ron of both of the devices are identical. The device foot print is smaller in DSBC device by 11% compared with that of the CBC structure leading to enhanced "On-resistance × Area" figure of merit where smaller high voltage SOI LDMOSEFT reduces the area and cost of power integrated circuits. In order to explain BVon improvement of DSBC structures, three-dimensional (3-D) device simulation is carried out to clarify the lateral BJT action and breakdown mechanism. It is demonstrated that the number of P+ diffusions in DSBC device can be increased to improve BVon without increasing "On-resistance × Area". The on-state breakdown voltage improvement and area efficiency of the diamond-shaped body contact proposes it as a promising candidate for reliable operation of SOI LDMOSFET.

  9. Mason’s equation application for prediction of voltage of oil shale treeing breakdown

    NASA Astrophysics Data System (ADS)

    Martemyanov, S. M.

    2017-05-01

    The application of the formula, which is used to calculate the maximum field at the tip of the pin-plane electrode system was proposed to describe the process of electrical treeing and treeing breakdown in an oil shale. An analytical expression for the calculation of the treeing breakdown voltage in the oil shale, as a function of the inter-electrode distance, was taken. A high accuracy of the correspondence of the model to the experimental data in the range of inter-electrode distances from 0.03 to 0.5 m was taken.

  10. Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p(sup +)n Junction Diodes--Part II: Dynamic Breakdown Properties. Part 2; Dynamic Breakdown Properties

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Fazi, Christian

    1999-01-01

    This paper outlines the dynamic reverse-breakdown characteristics of low-voltage (<250 V) small-area <5 x 10(exp -4) sq cm 4H-SiC p(sup +)n diodes subjected to nonadiabatic breakdown-bias pulsewidths ranging from 0.1 to 20 microseconds. 4H-SiC diodes with and without elementary screw dislocations exhibited positive temperature coefficient of breakdown voltage and high junction failure power densities approximately five times larger than the average failure power density of reliable silicon pn rectifiers. This result indicates that highly reliable low-voltage SiC rectifiers may be attainable despite the presence of elementary screw dislocations. However, the impact of elementary screw dislocations on other more useful 4H-SiC power device structures, such as high-voltage (>1 kV) pn junction and Schottky rectifiers, and bipolar gain devices (thyristors, IGBT's, etc.) remains to be investigated.

  11. Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p(sup +)n Junction Diodes--Part II: Dynamic Breakdown Properties. Part 2; Dynamic Breakdown Properties

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Fazi, Christian

    1999-01-01

    This paper outlines the dynamic reverse-breakdown characteristics of low-voltage (<250 V) small-area <5 x 10(exp -4) sq cm 4H-SiC p(sup +)n diodes subjected to nonadiabatic breakdown-bias pulsewidths ranging from 0.1 to 20 microseconds. 4H-SiC diodes with and without elementary screw dislocations exhibited positive temperature coefficient of breakdown voltage and high junction failure power densities approximately five times larger than the average failure power density of reliable silicon pn rectifiers. This result indicates that highly reliable low-voltage SiC rectifiers may be attainable despite the presence of elementary screw dislocations. However, the impact of elementary screw dislocations on other more useful 4H-SiC power device structures, such as high-voltage (>1 kV) pn junction and Schottky rectifiers, and bipolar gain devices (thyristors, IGBT's, etc.) remains to be investigated.

  12. Breakdown voltage determination of gaseous and near cryogenic fluids with application to rocket engine ignition

    NASA Astrophysics Data System (ADS)

    Nugent, Nicholas Jeremy

    Liquid rocket engines extensively use spark-initiated torch igniters for ignition. As the focus shifts to longer missions that require multiple starts of the main engines, there exists a need to solve the significant problems associated with using spark-initiated devices. Improving the fundamental understanding of predicting the required breakdown voltage in rocket environments along with reducing electrical noise is necessary to ensure that missions can be completed successfully. To better understand spark ignition systems and add to the fundamental research on spark development in rocket applications, several parameter categories of interest were hypothesized to affect breakdown voltage: (i) fluid, (ii) electrode, and (iii) electrical. The fluid properties varied were pressure, temperature, density and mass flow rate. Electrode materials, insert electrode angle and spark gap distance were the electrode properties varied. Polarity was the electrical property investigated. Testing how breakdown voltage is affected by each parameter was conducted using three different isolated insert electrodes fabricated from copper and nickel. A spark plug commonly used in torch igniters was the other electrode. A continuous output power source connected to a large impedance source and capacitance provided the pulsing potential. Temperature, pressure and high voltage measurements were recorded for the 418 tests that were successfully completed. Nitrogen, being inert and similar to oxygen, a propellant widely used in torch igniters, was used as the fluid for the majority of testing. There were 68 tests completed with oxygen and 45 with helium. A regression of the nitrogen data produced a correction coefficient to Paschen's Law that predicts the breakdown voltage to within 3000 volts, better than 20%, compared to an over prediction on the order of 100,000 volts using Paschen's Law. The correction coefficient is based on the parameters most influencing breakdown voltage: fluid

  13. Breakdown voltage reliability improvement in gas-discharge tube surge protectors employing graphite field emitters

    NASA Astrophysics Data System (ADS)

    Žumer, Marko; Zajec, Bojan; Rozman, Robert; Nemanič, Vincenc

    2012-04-01

    Gas-discharge tube (GDT) surge protectors are known for many decades as passive units used in low-voltage telecom networks for protection of electrical components from transient over-voltages (discharging) such as lightning. Unreliability of the mean turn-on DC breakdown voltage and the run-to-run variability has been overcome successfully in the past by adding, for example, a radioactive source inside the tube. Radioisotopes provide a constant low level of free electrons, which trigger the breakdown. In the last decades, any concept using environmentally harmful compounds is not acceptable anymore and new solutions were searched. In our application, a cold field electron emitter source is used as the trigger for the gas discharge but with no activating compound on the two main electrodes. The patent literature describes in details the implementation of the so-called trigger wires (auxiliary electrodes) made of graphite, placed in between the two main electrodes, but no physical explanation has been given yet. We present experimental results, which show that stable cold field electron emission current in the high vacuum range originating from the nano-structured edge of the graphite layer is well correlated to the stable breakdown voltage of the GDT surge protector filled with a mixture of clean gases.

  14. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    SciTech Connect

    Xin, Qian; Yan, Linlong; Luo, Yi; Song, Aimin

    2015-03-16

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

  15. High voltage research (breakdown strengths of gaseous and liquid insulators) and environmental effects of dielectric gases. Semiannual report, October 1, 1979-March 31, 1980

    SciTech Connect

    Christophorou, L.G.; James, D.R.; Pai, R.Y.

    1980-08-01

    Topics covered include basic studies of gaseous dielectrics, direct current breakdown strengths of gases/mixtures, environmental effects studies and decomposition analyses, impulse studies, breakdown strengths of binary mixtures with concentric cylinder geometry, and a discussion of the experimental apparatus. (GHT)

  16. The breakdown voltage characteristics of compressed ambient air microdischarges from direct current to 10.2 MHz

    NASA Astrophysics Data System (ADS)

    Klas, M.; Moravsky, L.; Matejčik, Š.; Zahoran, M.; Martišovitš, V.; Radjenović, B.; Radmilović-Radjenović, M.

    2017-05-01

    This paper presents the results of the experimental and simulation studies of the breakdown characteristics of microdischarges in compressed ambient air under the influence of static and time-varying electric fields, up to radio-frequencies. The measurements were performed for sphere to plane geometry of the electrodes separated from 5 μm to 100 μm, within the pressure range 760 Torr to 3800 Torr. For gaps of the order of a few micrometers, it is not possible to properly obtain the left-hand side of the Paschen curve; and the Townsend mechanism is no longer suitable. Deviations are also observable in the direction of lower breakdown potential that appear at the right of the minimum of the direct-current breakdown voltage curves indicating that accumulated space charge plays an important role in enhanced field emission. The experimental data agree well with the simulation results obtained by a one-dimensional particle-in-cell/Monte Carlo collision code including field emission effects. Their fit to a simple formula describing the dependence of the breakdown voltage on the product of the pressure and the gap size is suggested. Based on the measured breakdown voltage curves, the effective secondary electron emission coefficients have been determined. This work especially focuses on the effect of the electrode surface degradation on the breakdown characteristics at high pressure and high frequency. It is observed that in the case of direct-current and low frequency discharges, there is no significant influence of the electrode surface degradation on the breakdown voltage and the effective yields. However, for higher frequencies, the breakdown voltages are lower and the effective yields are much higher after degradation. The obtained results represent our attempt to derive a preliminary understanding of the governing breakdown processes in compressed air microdischarges.

  17. MEMS microswitch for high-voltage applications.

    SciTech Connect

    Strong, Fabian Wilbur

    2004-07-01

    A microswitch utilizing thermoelectric MEMS actuators is being designed, fabricated, and characterized. The switch is intended to switch >1000 VDC with over 100 gigaohms off-state resistance. The main challenge in designing these switches is determining a contact electrode configuration with the ability to stand off high voltages, while still being able to bridge the contact gap using MEMS actuators. Extensive high voltage breakdown testing has confirmed that the breakdown response for planar MEMS polysilicon devices is similar to the published response of larger metal electrodes across single small air gaps (0.5 to 10 um). Investigations of breakdown response in planar electrode configurations with multiple gaps show promising results for high voltage switching.

  18. Al00.3Ga0.7N PN diode with breakdown voltage >1600 V

    DOE PAGES

    Allerman, A. A.; Armstrong, A. M.; Fischer, A. J.; ...

    2016-07-21

    Demonstration of Al00.3Ga0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm2 was achieved under DC forward bias and a reverse leakage current <3 nA was measured for voltages <1200 V. The differential on-resistance of 16 mΩ cm2 is limited by the lateral conductivity of the n-type contact layer required by the front-surface contactmore » geometry of the device. An effective critical electric field of 5.9 MV/cm was determined from the epilayer properties and the reverse current–voltage characteristics. To our knowledge, this is the first aluminium gallium nitride (AlGaN)-based PN diode exhibiting a breakdown voltage in excess of 1 kV. Finally, we note that a Baliga figure of merit (Vbr2/Rspec,on) of 150 MW/cm2 found is the highest reported for an AlGaN PN diode and illustrates the potential of larger-bandgap AlGaN alloys for high-voltage devices.« less

  19. High Voltage SPT Performance

    NASA Technical Reports Server (NTRS)

    Manzella, David; Jacobson, David; Jankovsky, Robert

    2001-01-01

    A 2.3 kW stationary plasma thruster designed to operate at high voltage was tested at discharge voltages between 300 and 1250 V. Discharge specific impulses between 1600 and 3700 sec were demonstrated with thrust between 40 and 145 mN. Test data indicated that discharge voltage can be optimized for maximum discharge efficiency. The optimum discharge voltage was between 500 and 700 V for the various anode mass flow rates considered. The effect of operating voltage on optimal magnet field strength was investigated. The effect of cathode flow rate on thruster efficiency was considered for an 800 V discharge.

  20. Polyurethane foam application for high voltage insulation

    NASA Astrophysics Data System (ADS)

    Argin, Mehmet

    Polyurethane foams have been in use for decades by the industry. The use of polyurethane foams is common in low voltage switchgears, but few applications are reported in medium and high-voltage (HV) systems. At high voltages, sulfur hexafluoride (SF6) and/or nitrogen (N2) is applied in hollow insulation systems like Optical Instrument Transformers (OIT) to avoid internal flashover. Firmly sealing these gases within the insulating system over a long period of time as well as over variable temperatures is difficult. As a result of this sealing problem, gas pressure drops, moisture may penetrate into the insulation medium, and the dielectric strength of the insulation system decreases. This work proposes the use of polyurethane foams to fill the hollow spaces in insulation systems. Much of the research effort focused on the demonstration of the dielectric strength of three different foams which are investigated using alternating current (AC) and lightning impulse voltages under different humidity and temperature conditions. It is shown that polyurethane foams have 2-3 times better dielectric strength than air. The breakdown strength decreases with the thickness of the foam; temperature and humidity have negligible effects on the breakdown voltage. The foam breakdown stress depends on the void size and distribution. The high density foams, with smaller void diameters, have higher breakdown stress. As the breakdown mechanism within polyurethane foam was explained, a hypothesis was developed to describe the mechanism that leads to electrical breakdown of polyurethane foams. Partial discharge measurements revealed that electrical breakdown of polyurethane foam is not the result of progress of discharges in time, as in other polymeric materials; discharges are very low and increase immediately before breakdown, suddenly increasing the electric field and producing an avalanche. Therefore, the mechanism that leads to breakdown in polyurethane foam is an avalanche breakdown

  1. Breakdown voltage and triggering probability of SiPM from IV curves at different temperatures

    NASA Astrophysics Data System (ADS)

    Dinu, N.; Nagai, A.; Para, A.

    2017-02-01

    This work presents a physical model describing the IV curves of SiPM detectors allowing to easily determine important device parameters like breakdown voltage VBD and the shape of Geiger triggering probability PGeiger. We measured IV curves and tested our IV model in a temperature range - 35 ° C < T < + 35 ° C on various SiPMs from two vendors (Hamamatsu devices of 3 × 3mm2 total area and 50 × 50 μm2 μcell size, 2011 and 2015 year production runs and KETEK devices of 0.5 × 0.5mm2 total area and 50 × 50 μm2 μcell size, 2015 production run). The shape of IV curve can be described in terms of Geiger probability and afterpulsing in a very large current range of 10-12 A breakdown voltage; determined from the usual method of linear fit of gain as a function of bias voltage, this discrepancy reflecting the fundamental difference in the physical significance of the ;breakdown voltage; determined by these two methods. The recent generation of SiPMs have very wide working range and there is an evidence phenomena beyond afterpulsing like heating or non-quenched pulses contributing to the fast increase of the current at high bias voltages.

  2. Dielectric breakdown studies of Teflon perfluoroalkoxy at high temperature

    NASA Technical Reports Server (NTRS)

    Suthar, J. L.; Laghari, J. R.

    1992-01-01

    Teflon perfluoroalkoxy (PFA) was evaluated for use as a dielectric material in high-temperature high-voltage capacitors for space applications. The properties that were characterized included the dc dielectric strength at temperatures up to 250 C and the permittivity and dielectric loss as a function of frequency, temperature and voltage. To understand the breakdown mechanism taking place at high temperatures, the pre-breakdown discharge and conduction currents, and the dependence of dielectric strength on thickness of the film were determined. Confocal laser microscopy was performed to diagnose for microimperfections within the film structure. The results obtained show a significant decrease in the dielectric strength and an increase in dielectric loss with an increase in temperature, suggesting that impulse thermal breakdown could be a responsible mechanism in PFA film at temperatures above 150 C.

  3. The Influence of Electrode Surface Mercury Film Deformation on the Breakdown Voltage of a Sub-Nanosecond Pulse Discharge Tube

    NASA Astrophysics Data System (ADS)

    Weng, Ming; Xu, Weijun; Wang, Rui

    2012-11-01

    A sub-nanosecond pulse discharge tube is a gas discharge tube which can generate a rapid high-voltage pulse of kilo-volts in amplitude and sub-nanoseconds in width. In this paper, the sub-nanosecond pulse discharge tube and its working principles are described. Because of the phenomenon that the deformation process of the mercury film on the electrode surface lags behind the charging process, the mercury film deformation process affects the dynamic breakdown voltage of the tube directly. The deformation of the mercury film is observed microscopically, and the dynamic breakdown voltage of the tube is measured using an oscillograph. The results show that all the parameters in the charging process, such as charging resistance, charging capacitance and DC power supply, affect the dynamic breakdown voltage of the tube. Based on these studies, the output pulse amplitude can be controlled continuously and individually by adjusting the power supply voltage. When the DC power supply is adjusted from 7 kV to 10 kV, the dynamic breakdown voltage ranges from 6.5 kV to 10 kV. According to our research, a kind of sub-nanosecond pulse generator is made, with a pulse width ranging from 0.5 ns to 2.5 ns, a rise time from 0.32 ns to 0.58 ns, and a pulse amplitude that is adjustable from 1.5 kV to 5 kV.

  4. Effect of the electrode material on the breakdown voltage and space charge distribution of propylene carbonate under impulse voltage

    NASA Astrophysics Data System (ADS)

    Yang, Qing; Jin, Yang; Sima, Wenxia; Liu, Mengna

    2016-04-01

    This paper reports three types of electrode materials (copper, aluminum, and stainless steel) that are used to measure the impulse breakdown voltage of propylene carbonate. The breakdown voltage of propylene carbonate with these electrode materials is different and is in decreasing order of stainless steel, copper, and aluminum. To explore how the electrode material affects the insulating properties of the liquid dielectric, the electric field distribution and space charge distribution of propylene carbonate under impulse voltage with the three electrode materials are measured on the basis of a Kerr electro-optic test. The space charge injection ability is highest for aluminum, followed by copper, and then the stainless steel electrodes. Furthermore, the electric field distortion rate decreased in the order of the aluminum, copper, and then the stainless steel electrode. This paper explains that the difference in the electric field distortion rate between the three electrode materials led to the difference in the impulse breakdown voltage of propylene carbonate.

  5. Experiment for measurements of the gas breakdown statistics by ramp voltage pulses

    SciTech Connect

    Markovic, V. Lj.; Stamenkovic, S. N.; Gocic, S. R.; Petrovic, Z. Lj.

    2006-09-15

    In the first part of this article the electronic automatic system for the measurements of dynamic breakdown voltages U{sub b} with linearly rising (ramp) pulses is presented. It generates the sequence of ramp pulses with subvoltage level U{sub sub}{approx_equal}0 during the relaxation time {tau} of the tube, and the ramp pulses start from the static breakdown voltage U{sub s}, thus enabling the correct study of electrical breakdowns and relaxation in gases. In the second part the measurements in argon with and without a voltage during the off period of the pulse are analyzed. The influence of the subvoltage on the mean value of the breakdown voltage U{sub b} as a function of the rise rate k, on the statistical U{sub b} distributions and on the afterglow kinetics is also discussed.

  6. Effect of magnetic nanoparticles on the lightning impulse breakdown voltage of transformer oil

    NASA Astrophysics Data System (ADS)

    Ghasemi, J.; Jafarmadar, S.; Nazari, M.

    2015-09-01

    In this study, the lightning impulse breakdown voltage of magnetic nanofluids based on transformer mineral oil for use in power systems was reviewed. Magnetic nanofluids are obtained from dispersion of the magnetic nanoparticles (Fe3 O4) within transformer oil, as the base fluid. The Fe3 O4 nanoparticles, using a coprecipitation method, were synthesized, coated with a surfactant, and dispersed using an ultrasonic processor, within the uninhibited transformer mineral oil NYTRO LIBRA. The lightning impulse breakdown voltage was obtained using sphere-sphere electrodes in an experimental setup for nano-oil, in volume concentration of 0.1-0.6%. Results indicate improved lightning impulse breakdown voltage under optimal conditions. Increase in the lightning impulse breakdown voltage of the nano-oil is mainly due to the dielectric and magnetic properties of Fe3 O4 nanoparticles, acting as free electrons snapper, and reduce the rate of free electrons production in the ionization process.

  7. High-Voltage Pulse Voltage Generator,

    DTIC Science & Technology

    1979-12-21

    the invention: I. I. Kalyatskiy, V. I. Kurets, and V. I. Safronov Well-known are pulse voltage generators which employ the Arkad’yev- Marx principle of...P2, and hereafter the device operates like an ordinary GIN [pulse volt- age generator] according to the Arkad’yev- Marx principle. The Object of the...Invention The high-voltage pulse voltage generator, assembled according to the Arkad’yev- Marx arrangement, each stage of which incorporates reactive

  8. High voltage power supply

    NASA Astrophysics Data System (ADS)

    Ruitberg, A. P.; Young, K. M.

    1985-05-01

    A high voltage power supply is formed by three discrete circuits energized by a battery to provide a plurality of concurrent output signals floating at a high output voltage on the order of several tens of kilovolts. In the first two circuits, the regulator stages are pulse width modulated and include adjustable ressistances for varying the duty cycles of pulse trains provided to corresponding oscillator stages while the third regulator stage includes an adjustable resistance for varying the amplitude of a steady signal provided to a third oscillator stage. In the first circuit, the oscillator, formed by a constant current drive network and a tuned resonant network included a step up transformer, is coupled to a second step up transformer which, in turn, supplies an amplified sinusoidal signal to a parallel pair of complementary poled rectifying, voltage multiplier stages to generate the high output voltage.

  9. High voltage power supply

    NASA Technical Reports Server (NTRS)

    Ruitberg, A. P.; Young, K. M. (Inventor)

    1985-01-01

    A high voltage power supply is formed by three discrete circuits energized by a battery to provide a plurality of concurrent output signals floating at a high output voltage on the order of several tens of kilovolts. In the first two circuits, the regulator stages are pulse width modulated and include adjustable ressistances for varying the duty cycles of pulse trains provided to corresponding oscillator stages while the third regulator stage includes an adjustable resistance for varying the amplitude of a steady signal provided to a third oscillator stage. In the first circuit, the oscillator, formed by a constant current drive network and a tuned resonant network included a step up transformer, is coupled to a second step up transformer which, in turn, supplies an amplified sinusoidal signal to a parallel pair of complementary poled rectifying, voltage multiplier stages to generate the high output voltage.

  10. Voltage-time characteristics of particle-initiated impulse breakdown in SF/sub 6/ and SF/sub 6/-N/sub 2/

    SciTech Connect

    Eteiba, M.B.; Rizk, F.

    1983-05-01

    The paper comprises a theoretical and experimental investigation into the impulse breakdown voltage-time characteristics of a sphericalparticle-contaminated coaxial-cylinder gap in compressed SF/sub 6/ and SF/sub 6/-N/sub 2/ mixture. The experimental work was carried out on a 25/70-mm diameter coaxial-cylinder gap with a 3.2-mm spherical particle attached to the high-voltage electrode, at a gas pressure of 0.3 MPa under 0.5/50-..mu..s and 1.2/50-..mu..s impulses of both polarities. Whenever possible the results were compared to those previously obtained on a clean system from which the particle effect on impulse breakdown voltage and delay time was identified. The theoretical and experimental results of breakdown delay time distributions, 5% and 95% probability voltage-time curves and breakdown voltage probability functions were found to be in satisfactory agreement.

  11. Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor

    SciTech Connect

    Saheed, M. Shuaib M.; Muti Mohamed, Norani; Arif Burhanudin, Zainal

    2014-03-24

    Ionization gas sensors using vertically aligned multi-wall carbon nanotubes (MWCNT) are demonstrated. The sharp tips of the nanotubes generate large non-uniform electric fields at relatively low applied voltage. The enhancement of the electric field results in field emission of electrons that dominates the breakdown mechanism in gas sensor with gap spacing below 14 μm. More than 90% reduction in breakdown voltage is observed for sensors with MWCNT and 7 μm gap spacing. Transition of breakdown mechanism, dominated by avalanche electrons to field emission electrons, as decreasing gap spacing is also observed and discussed.

  12. High voltage coaxial switch

    DOEpatents

    Rink, John P.

    1983-07-19

    A coaxial high voltage, high current switch having a solid cylindrical cold cathode coaxially surrounded by a thin hollow cylindrical inner electrode and a larger hollow cylindrical outer electrode. A high voltage trigger between the cathode and the inner electrode causes electrons to be emitted from the cathode and flow to the inner electrode preferably through a vacuum. Some of the electrons penetrate the inner electrode and cause a volumetric discharge in the gas (which may be merely air) between the inner and outer electrodes. The discharge provides a low impedance path between a high voltage charge placed on the outer electrode and a load (which may be a high power laser) coupled to the inner electrode. For high repetition rate the gas between the inner and outer electrodes may be continuously exchanged or refreshed under pressure.

  13. High voltage coaxial switch

    DOEpatents

    Rink, J.P.

    1983-07-19

    A coaxial high voltage, high current switch having a solid cylindrical cold cathode coaxially surrounded by a thin hollow cylindrical inner electrode and a larger hollow cylindrical outer electrode. A high voltage trigger between the cathode and the inner electrode causes electrons to be emitted from the cathode and flow to the inner electrode preferably through a vacuum. Some of the electrons penetrate the inner electrode and cause a volumetric discharge in the gas (which may be merely air) between the inner and outer electrodes. The discharge provides a low impedance path between a high voltage charge placed on the outer electrode and a load (which may be a high power laser) coupled to the inner electrode. For high repetition rate the gas between the inner and outer electrodes may be continuously exchanged or refreshed under pressure. 3 figs.

  14. Liquid Nitrogen as Fast High Voltage Switching Medium

    NASA Astrophysics Data System (ADS)

    Dickens, J.; Neuber, A.; Haustein, M.; Krile, J.; Krompholz, H.

    2002-12-01

    Compact pulsed power systems require new switching technologies. For high voltages, liquid nitrogen seems to be a suitable switching medium, with high hold-off voltage, low dielectric constant, and no need for pressurized systems as in high pressure gas switches. The discharge behavior in liquid nitrogen, such as breakdown voltages, formative times, current rise as function of voltage, recovery, etc. are virtually unknown, however. The phenomenology of breakdown in liquid nitrogen is investigated with high speed (temporal resolution < 1 ns) electrical and optical diagnostics, in a coaxial system with 50-Ohm impedance. Discharge current and voltage are determined with transmission line type current sensors and capacitive voltage dividers. The discharge luminosity is measured with photomultiplier tubes. Preliminary results of self-breakdown investigations (gap 1 mm, breakdown voltage 44 kV, non-boiling supercooled nitrogen) show a fast (2 ns) transition from an unknown current level to several mA, a long-duration (100 ns) phase with constant current superimposed by ns-spikes, and a final fast transition to the impedance limited current during several nanoseconds. The optical measurements will be expanded toward spectroscopy and high speed photography with the aim of clarifying the overall breakdown mechanisms, including electronic initiation, bubble formation, bubble dynamics, and their role in breakdown, for different electrode geometries (different macroscopic field enhancements).

  15. High voltage pulse generator

    DOEpatents

    Fasching, George E.

    1977-03-08

    An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

  16. Experimental studies on power frequency breakdown voltage of CF3I/N2 mixed gas under different electric fields

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoxing; Xiao, Song; Han, Yefei; Cressault, Yann

    2016-02-01

    To verify the feasibility of replacing SF6 by CF3I/N2, we compared their power frequency breakdown performance with the influence of gas pressure, mixing ratio, and electric field utilization coefficient. Under different electric fields and mixing ratios, the power frequency breakdown voltage of CF3I/N2 increases linearly along with gas pressure. Besides, with the rise of the electric field utilization coefficient, the linear growth rate of breakdown voltage along with gas pressure gradually rises. The sensitivity of pure CF3I to electric field is particularly high and can be improved by the addition of N2. The mixture 30% CF3I/70% N2 at 0.3 MPa could replace pure SF6 in equipment requiring a low insulation, but the gas pressure or the content of CF3I need to be increased for higher insulation requirements.

  17. One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

    NASA Astrophysics Data System (ADS)

    Zhang, Jun; Guo, Yu-Feng; Xu, Yue; Lin, Hong; Yang, Hui; Hong, Yang; Yao, Jia-Fei

    2015-02-01

    A novel one-dimensional (1D) analytical model is proposed for quantifying the breakdown voltage of a reduced surface field (RESURF) lateral power device fabricated on silicon on an insulator (SOI) substrate. We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions. Based on the assumption, the lateral PN junction behaves as a linearly graded junction, thus resulting in a reduced surface electric field and high breakdown voltage. Using the proposed model, the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools. The analytical results are shown to be in fair agreement with the numerical results. Finally, a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters. This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device. Project supported by the National Natural Science Foundation of China (Grant No. 61076073) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20133223110003).

  18. High voltage switches having one or more floating conductor layers

    SciTech Connect

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  19. RF Breakdown in High Frequency Accelerators

    SciTech Connect

    Doebert, S

    2004-05-27

    RF breakdown in high-frequency accelerators appears to limit the maximum achievable gradient as well as the reliability of such devices. Experimental results from high power tests, obtained mostly in the framework of the NLC/GLC project at 11 GHz and from the CLIC study at 30 GHz, will be used to illustrate the important issues. The dependence of the breakdown phenomena on rf pulse length, operating frequency and fabrication material will be described. Since reliability is extremely important for large scale accelerators such as a linear collider, the measurements of breakdown rate as a function of the operating gradient will be highlighted.

  20. Effects of Displacement Damage on the Time-Resolved Gain and Bandwidth of a Low Breakdown Voltage Si Avalanche Photodiode

    NASA Technical Reports Server (NTRS)

    Laird, Jamie S.; Onoda, Shinobu; Hirao, Toshio; Becker, Heidi; Johnston, Allan; Laird, Jamie S.; Itoh, Hisayoshi

    2006-01-01

    Effects of displacement damage and ionization damage induced by gamma irradiation on the dark current and impulse response of a high-bandwidth low breakdown voltage Si Avalanche Photodiode has been investigated using picosecond laser microscopy. At doses as high as 10Mrad (Si) minimal alteration in the impulse response and bandwidth were observed. However, dark current measurements also performed with and without biased irradiation exhibit anomalously large damage factors for applied biases close to breakdown. The absence of any degradation in the impulse response is discussed as are possible mechanisms for higher dark current damage factors observed for biased irradiation.

  1. Volume Mode Excitation In Submerged Bubbles: Towards Reducing Breakdown Voltage For Plasma Generation In Liquids

    NASA Astrophysics Data System (ADS)

    Groele, Joseph; Foster, John

    2016-09-01

    Plasma ignition of submerged gas bubbles reduces the breakdown voltage required to introduce plasma into a liquid. It is possible to further reduce the breakdown voltage of bubbles in liquid water. Local enhancement of the electric field through bubble shape mode activation combined with volume modulation for decreased internal pressure and neutral density is a potential pathway for minimizing breakdown voltage. Although electrohydraulic control of bubble shape has been investigated, for the purpose of reducing breakdown voltage, the quantitative benefits of accessing bubble volume modes remain unexplored. Submerged bubble volume modulation may be achieved by sonically or electrohydraulically driving a time-varying sinusoidal field at the Minnaert resonance frequency. Volume mode activation as a possible pathway to reduced breakdown voltage is demonstrated using Rayleigh-Plesset modeling of the transient bubble radius under an applied sinusoidal pressure signal. Results from an experimental investigation aimed at exciting volume modes are also presented. Additionally, results from preliminary experiments aimed at breaking down a volume mode oscillating bubble as a function of internal bubble pressure is presented.

  2. High Voltage Insulation Technology

    NASA Astrophysics Data System (ADS)

    Scherb, V.; Rogalla, K.; Gollor, M.

    2008-09-01

    In preparation of new Electronic Power Conditioners (EPC's) for Travelling Wave Tub Amplifiers (TWTA's) on telecom satellites a study for the development of new high voltage insulation technology is performed. The initiative is mandatory to allow compact designs and to enable higher operating voltages. In a first task a market analysis was performed, comparing different materials with respect to their properties and processes. A hierarchy of selection criteria was established and finally five material candidates (4 Epoxy resins and 1 Polyurethane resin) were selected to be further investigated in the test program. Samples for the test program were designed to represent core elements of an EPC, the high voltage transformer and Printed Circuit Boards of the high voltage section. All five materials were assessed in the practical work flow of the potting process and electrical, mechanical, thermal and lifetime testing was performed. Although the lifetime tests results were overlayed by a larges scatter, finally two candidates have been identified for use in a subsequent qualification program. This activity forms part of element 5 of the ESA ARTES Programme.

  3. A model based DC analysis of SiPM breakdown voltages

    NASA Astrophysics Data System (ADS)

    Nagy, Ferenc; Hegyesi, Gyula; Kalinka, Gábor; Molnár, József

    2017-03-01

    A new method to determine the breakdown voltage of SiPMs is presented. It is based on a DC model which describes the breakdown phenomenon by distinct avalanche turn-on (V01) and turn-off (V10) voltages. It is shown that traditional DC methods relying on the analysis of reverse current-voltage curves measure a value either near V01 or between V01 and V10 while V10 results by complex gain-voltage measurements. The proposed method reveals how the microcell population distributes around V01. It is found that if this distribution is assumed to be normal, then both V01 and V10 of the SiPM can readily be extracted from current-voltage curves. Measurements are in good agreement with the theoretical model.

  4. High voltage variable diameter insulator

    DOEpatents

    Vanacek, D.L.; Pike, C.D.

    1982-07-13

    A high voltage feedthrough assembly having a tubular insulator extending between the ground plane ring and the high voltage ring. The insulator is made of Pyrex and decreases in diameter from the ground plane ring to the high voltage ring, producing equipotential lines almost perpendicular to the wall of the insulator to optimize the voltage-holding capability of the feedthrough assembly.

  5. Partial discharge in a high voltage experimental test assembly

    SciTech Connect

    Koss, R.J.; Brainard, J.P.

    1998-07-01

    This study was initiated when a new type of breakdown occurred in a high voltage experimental test assembly. An anomalous current pulse was observed, which indicated partial discharges, some leading to total breakdowns. High voltage insulator defects are shown along with their effect on the electrostatic fields in the breakdown region. OPERA electromagnetic field modeling software is used to calculate the fields and present a cause for the discharge. Several design modifications are investigated and one of the simplest resulted in a 25% decrease in the field at the discharge surface.

  6. High Voltage Seismic Generator

    NASA Astrophysics Data System (ADS)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  7. Insulators for high voltages

    SciTech Connect

    Looms, J.S.T.

    1987-01-01

    This book describes electrical insulators for high voltage applications. Topics considered include the insulating materials, the manufacture of wet process porcelain, the manufacture of tempered glass, the glass-fibre core, the polymeric housing, the common problem - terminating an insulator, mechanical constraints, the physics of pollution flashover, the physics of contamination, testing of insulators, conclusions from testing, remedies for flashover, insulators for special cases, interference and noise, and the insulator of the future.

  8. High voltage generator

    DOEpatents

    Schwemin, A. J.

    1959-03-17

    A generator for producing relatively large currents at high voltages is described. In general, the invention comprises a plurality of capacitors connected in series by a plurality of switches alternately disposed with the capacitors. The above-noted circuit is mounted for movement with respect to contact members and switch closure means so that a load device and power supply are connected across successive numbers of capacitors, while the other capacitors are successively charged with the same power supply.

  9. HIGH VOLTAGE GENERATOR

    DOEpatents

    Schwemin, A.J.

    1959-03-17

    A generator is presented for producing relatively large currents at high voltages. In general, the invention comprises a plurality of capacitors connected in series by a plurality of switches alternately disposed with the capacitors. The circuit is mounted for movement with respect to contact members and switch closure means so that a load device and power supply are connected across successive numbers of capacitors, while the other capacitors are successively charged with the same power supply.

  10. High voltage pulse conditioning

    DOEpatents

    Springfield, Ray M.; Wheat, Jr., Robert M.

    1990-01-01

    Apparatus for conditioning high voltage pulses from particle accelerators in order to shorten the rise times of the pulses. Flashover switches in the cathode stalk of the transmission line hold off conduction for a determinable period of time, reflecting the early portion of the pulses. Diodes upstream of the switches divert energy into the magnetic and electrostatic storage of the capacitance and inductance inherent to the transmission line until the switches close.

  11. High voltage DC power supply

    DOEpatents

    Droege, T.F.

    1989-12-19

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

  12. High voltage DC power supply

    DOEpatents

    Droege, Thomas F.

    1989-01-01

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

  13. HIGH VOLTAGE ION SOURCE

    DOEpatents

    Luce, J.S.

    1960-04-19

    A device is described for providing a source of molecular ions having a large output current and with an accelerated energy of the order of 600 kv. Ions are produced in an ion source which is provided with a water-cooled source grid of metal to effect maximum recombination of atomic ions to molecular ions. A very high accelerating voltage is applied to withdraw and accelerate the molecular ions from the source, and means are provided for dumping the excess electrons at the lowest possible potentials. An accelerating grid is placed adjacent to the source grid and a slotted, grounded accelerating electrode is placed adjacent to the accelerating grid. A potential of about 35 kv is maintained between the source grid and accelerating grid, and a potential of about 600 kv is maintained between the accelerating grid and accelerating electrode. In order to keep at a minimum the large number of oscillating electrons which are created when such high voltages are employed in the vicinity of a strong magnetic field, a plurality of high voltage cascaded shields are employed with a conventional electron dumping system being employed between each shield so as to dump the electrons at the lowest possible potential rather than at 600 kv.

  14. Gas Breakdown in the Sub-Nanosecond Regime with Voltages Below 15 KV

    DTIC Science & Technology

    2013-06-01

    protect devices from high power microwave radiation. Previous investigations of sub-nanosecond breakdown were mainly limited to high-pressure gases...which are doubled at the open gap before breakdown) delay times between start of the pulse and start of a measurable current flow (amplitude > several...using gas breakdown caused by the first cycle of incoming high power microwaves with frequencies in the GHz regime - Ultra-wideband radiation sources

  15. Specific electrical capacitance and voltage breakdown as a function of temperature for different planar lipid bilayers.

    PubMed

    Velikonja, Aljaž; Kramar, Peter; Miklavčič, Damijan; Maček Lebar, Alenka

    2016-12-01

    The breakdown voltage and specific electrical capacitance of planar lipid bilayers formed from lipids isolated from the membrane of archaeon Aeropyrum pernix K1 as a function of temperature were studied and compared with data obtained previously in MD simulation studies. Temperature dependence of breakdown voltage and specific electrical capacitance was measured also for dipalmitoylphosphatidylcholine (DPPC) bilayers and bilayers formed from mixture of diphytanoylphosphocholine (DPhPC) and DPPC in ratio 80:20. The breakdown voltage of archaeal lipids planar lipid bilayers is more or less constant until 50°C, while at higher temperatures a considerable drop is observed, which is in line with the results from MD simulations. The breakdown voltage of DPPC planar lipid bilayer at melting temperature is considerably higher than in the gel phase. Specific electrical capacitance of planar lipid bilayers formed from archaeal lipids is approximately constant for temperatures up to 40°C and then gradually decreases. The difference with MD simulation predictions is discussed. Specific electrical capacitance of DPPC planar lipid bilayers in fluid phase is 1.75 times larger than that of the gel phase and it follows intermediated phases before phase transition. Increase in specific electrical capacitance while approaching melting point of DPPC is visible also for DPhPC:DPPC mixture.

  16. APPARATUS FOR REGULATING HIGH VOLTAGE

    DOEpatents

    Morrison, K.G.

    1951-03-20

    This patent describes a high-voltage regulator of the r-f type wherein the modulation of the r-f voltage is accomplished at a high level, resulting in good stabilization over a large range of load conditions.

  17. Spectral response measurements of multijunction solar cells with low shunt resistance and breakdown voltages.

    PubMed

    Babaro, Juan P; West, Kevin G; Hamadani, Behrang H

    2016-11-01

    Spectral response measurements of germanium-based triple-junction solar cells were performed under a variety of light and voltage bias conditions. Two of the three junctions exhibited voltage and light bias dependent artifacts in their measured responses, complicating the true spectral response of these junctions. To obtain more insight into the observed phenomena, a set of current-voltage measurement combinations were also performed on the solar cells under identical illumination conditions, and the data were used in the context of a diode-based analytical model to calculate and predict the spectral response behavior of each junction as a function of voltage. The analysis revealed that both low shunt resistance and low breakdown voltages in two of the three junctions influenced the measured quantum efficiency of all three junctions. The data and the modeling suggest that combination of current-voltage measurements under various light bias sources can reveal important information about the spectral response behavior in multijunction solar cells.

  18. Improving breakdown voltage performance of SOI power device with folded drift region

    NASA Astrophysics Data System (ADS)

    Qi, Li; Hai-Ou, Li; Ping-Jiang, Huang; Gong-Li, Xiao; Nian-Jiong, Yang

    2016-07-01

    A novel silicon-on-insulator (SOI) high breakdown voltage (BV) power device with interlaced dielectric trenches (IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer, which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges (holes) at the corner of IDT. The average value of the lateral electric field of the proposed device reaches 60 V/μm with a 10 μm drift length, which increases by 200% in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V. Project supported by the Guangxi Natural Science Foundation of China (Grant Nos. 2013GXNSFAA019335 and 2015GXNSFAA139300), Guangxi Experiment Center of Information Science of China (Grant No. YB1406), Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing of China, Key Laboratory of Cognitive Radio and Information Processing (Grant No. GXKL061505), Guangxi Key Laboratory of Automobile Components and Vehicle Technology of China (Grant No. 2014KFMS04), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).

  19. High voltage variable diameter insulator

    DOEpatents

    Vanecek, David L.; Pike, Chester D.

    1984-01-01

    A high voltage feedthrough assembly (10) having a tubular insulator (15) extending between the ground plane ring (16) and the high voltage ring (30). The insulator (15) is made of Pyrex and decreases in diameter from the ground plane ring (16) to the high voltage ring (30), producing equipotential lines almost perpendicular to the wall (27) of the insulator (15) to optimize the voltage-holding capability of the feedthrough assembly (10).

  20. High voltage isolation transformer

    NASA Technical Reports Server (NTRS)

    Clatterbuck, C. H.; Ruitberg, A. P. (Inventor)

    1985-01-01

    A high voltage isolation transformer is provided with primary and secondary coils separated by discrete electrostatic shields from the surfaces of insulating spools on which the coils are wound. The electrostatic shields are formed by coatings of a compound with a low electrical conductivity which completely encase the coils and adhere to the surfaces of the insulating spools adjacent to the coils. Coatings of the compound also line axial bores of the spools, thereby forming electrostatic shields separating the spools from legs of a ferromagnetic core extending through the bores. The transformer is able to isolate a high constant potential applied to one of its coils, without the occurrence of sparking or corona, by coupling the coatings, lining the axial bores to the ferromagnetic core and by coupling one terminal of each coil to the respective coating encasing the coil.

  1. Experimental validation of prototype high voltage bushing

    NASA Astrophysics Data System (ADS)

    Shah, Sejal; Tyagi, H.; Sharma, D.; Parmar, D.; M. N., Vishnudev; Joshi, K.; Patel, K.; Yadav, A.; Patel, R.; Bandyopadhyay, M.; Rotti, C.; Chakraborty, A.

    2017-08-01

    Prototype High voltage bushing (PHVB) is a scaled down configuration of DNB High Voltage Bushing (HVB) of ITER. It is designed for operation at 50 kV DC to ensure operational performance and thereby confirming the design configuration of DNB HVB. Two concentric insulators viz. Ceramic and Fiber reinforced polymer (FRP) rings are used as double layered vacuum boundary for 50 kV isolation between grounded and high voltage flanges. Stress shields are designed for smooth electric field distribution. During ceramic to Kovar brazing, spilling cannot be controlled which may lead to high localized electrostatic stress. To understand spilling phenomenon and precise stress calculation, quantitative analysis was performed using Scanning Electron Microscopy (SEM) of brazed sample and similar configuration modeled while performing the Finite Element (FE) analysis. FE analysis of PHVB is performed to find out electrical stresses on different areas of PHVB and are maintained similar to DNB HV Bushing. With this configuration, the experiment is performed considering ITER like vacuum and electrical parameters. Initial HV test is performed by temporary vacuum sealing arrangements using gaskets/O-rings at both ends in order to achieve desired vacuum and keep the system maintainable. During validation test, 50 kV voltage withstand is performed for one hour. Voltage withstand test for 60 kV DC (20% higher rated voltage) have also been performed without any breakdown. Successful operation of PHVB confirms the design of DNB HV Bushing. In this paper, configuration of PHVB with experimental validation data is presented.

  2. Electrical design analysis and breakdown voltage test aspects of indigenously developed electrical breaks at Cryo temperatures

    SciTech Connect

    Sharma, Rajiv; Tanna, V.L.; Amardas, A.; Pradhan, S.; Chandramouli, S.

    2014-07-01

    Electrical insulation breaks are very critical component of large-scale fusion devices employing superconducting magnets and are used to insulate electrically the coil and the cryogenic supply line (kept at ground potential). The electrical insulation of breaks consists of the composites insulations, G-10 GFRP (Glass fiber reinforced plastic), cryogenic compatible epoxy and S-glass boron free fiber in air and helium environment under vacuum. To optimize the design parameters, the detailed electrical analysis have been carried out using the electrostatic solid axi-symmetric model by COMSOL 4.1 multiphysics software for electrodes separation, electrical field strength as well as flashover phenomenon between two electrodes with composite insulator material have been analyzed at different surfaces and contours along with by varying gaps between SS electrodes. We have carried out the high voltage breakdown test (0-35) kV, insulation resistance measurement at 0-5 kV test voltage in Paschen condition of (10{sup 3} -10{sup -5}) mbar in helium gas and air environment at 300 K and 77 K experimentally on in-house developed insulation breaks. (author)

  3. High voltage feedthrough bushing

    DOEpatents

    Brucker, John P.

    1993-01-01

    A feedthrough bushing for a high voltage diode provides for using compression sealing for all sealing surfaces. A diode assembly includes a central conductor extending through the bushing and a grading ring assembly circumferentially surrounding and coaxial with the central conductor. A flexible conductive plate extends between and compressively seals against the central conductor and the grading ring assembly, wherein the flexibility of the plate allows inner and outer portions of the plate to axially translate for compression sealing against the central conductor and the grading ring assembly, respectively. The inner portion of the plate is bolted to the central conductor for affecting sealing. A compression beam is also bolted to the central conductor and engages the outer portion of the plate to urge the outer portion toward the grading ring assembly to obtain compression sealing therebetween.

  4. The use of the charge-induced voltage alteration technique to analyze precursors to dielectric breakdown

    SciTech Connect

    Barton, D.L.; Cole, E.I. Jr.

    1992-01-01

    Charge-Induced Voltage Alteration (CIVA) is a new scanning electron microscopy technique to rapidly localize open conductors on integrated circuits (ICs). CIVA uses a constant current source to power the IC under test and produces an image by monitoring the variation in voltage supplied to the IC as a function of electron beam position. This concept of observing supply voltage changes as in CIVA has been applied to Tunneling Current Microscopy (TCM). TCM has been used to localize oxide defects in biased, large area MOS capacitors before oxide breakdown by measuring the fluctuations in current with electron beam position. These changes are normally on the order of 10 nA. Conventional current amplifiers normally limit the applied voltage thereby reducing the operational range of the TCM technique unless special circuit modifications are employed. By using a constant current source and monitoring the voltage changes across the capacitor being analyzed, there are no voltage limitations. Signal magnitudes on the order of 5 mV have been recorded from capacitor defects using the CIVA setup. A detailed description of the CIVA acquisition system used for TCM and a comparison with conventional TCM are provided. Images of oxide defects before breakdown are presented to show that, while the two approaches are comparable wid each has its own strengths and weaknesses, the CIVA approach is a superior technique for precursor localization.

  5. The use of the charge-induced voltage alteration technique to analyze precursors to dielectric breakdown

    SciTech Connect

    Barton, D.L.; Cole, E.I. Jr.

    1992-09-01

    Charge-Induced Voltage Alteration (CIVA) is a new scanning electron microscopy technique to rapidly localize open conductors on integrated circuits (ICs). CIVA uses a constant current source to power the IC under test and produces an image by monitoring the variation in voltage supplied to the IC as a function of electron beam position. This concept of observing supply voltage changes as in CIVA has been applied to Tunneling Current Microscopy (TCM). TCM has been used to localize oxide defects in biased, large area MOS capacitors before oxide breakdown by measuring the fluctuations in current with electron beam position. These changes are normally on the order of 10 nA. Conventional current amplifiers normally limit the applied voltage thereby reducing the operational range of the TCM technique unless special circuit modifications are employed. By using a constant current source and monitoring the voltage changes across the capacitor being analyzed, there are no voltage limitations. Signal magnitudes on the order of 5 mV have been recorded from capacitor defects using the CIVA setup. A detailed description of the CIVA acquisition system used for TCM and a comparison with conventional TCM are provided. Images of oxide defects before breakdown are presented to show that, while the two approaches are comparable wid each has its own strengths and weaknesses, the CIVA approach is a superior technique for precursor localization.

  6. High Breakdown Strength, Multilayer Ceramics for Compact Pulsed Power Applications

    SciTech Connect

    Gilmore, B.; Huebner, W.; Krogh, M.L.; Lundstrom, J.M.; Pate, R.C.; Rinehart, L.F.; Schultz, B.C.; Zhang, S.C.

    1999-07-20

    Advanced ceramics are being developed for use in large area, high voltage devices in order to achieve high specific energy densities (>10 6 J/m 3 ) and physical size reduction. Initial materials based on slip cast TiO2 exhibited a high bulk breakdown strength (BDS >300 kV/cm) and high permittivity with low dispersion (e�100). However, strong area and thickness dependencies were noted. To increase the BDS, multilayer dielectric compositions are being developed based on glass/TiO2 composites. The addition of glass increases the density (�99.8% theoretical), forms a continuous grain boundary phase, and also allows the use of high temperature processes to change the physical shape of the dielectric. The permittivity can also be manipulated since the volume fraction and connectivity of the glassy phase can be readily shifted. Results from this study on bulk breakdown of TiO2 multilayer structures with an area of 2cm 2 and 0.1cm thickness have measured 650 kV/cm. Furthermore, a strong dependence of breakdown strength and permittivity has been observed and correlated with microstructure and the glass composition. This paper presents the interactive effects of manipulation of these variables.

  7. Double window partial SOI-LDMOSFET: A novel device for breakdown voltage improvement

    NASA Astrophysics Data System (ADS)

    Orouji, Ali A.; Moghadam, Hamid Amini; Dideban, A.

    2010-11-01

    In this paper we propose novel partial silicon on insulator lateral double diffused MOSFET in order to increase breakdown voltage. The key idea in this work is to decrease common peaks near the drain and gate junctions by producing additional peaks. The proposed structure is called double window partial SOI-LDMOSFET (DWP-SOI). The simulation results show that the breakdown voltage of DWP-SOI can be enhanced about two times as compared to conventional SOI-LDMOSFET(C-SOI) and about 70% as compared to conventional SOI-LDMOSFET with a field plate (CF-SOI). The self-heating effect is also improved in the proposed structure because we have used two windows in buried oxide, which provide a heat conduction path from the active region to the substrate.

  8. Physical mechanisms for reduction of the breakdown voltage in the circuit of a rod lightning protector with an opening microswitch

    SciTech Connect

    Bobrov, Yu. K.; Zhuravkov, I. V.; Ostapenko, E. I.; Starikov, V. V.; Yurgelenas, Yu. V.

    2010-12-15

    The effect of air gap breakdown voltage reduction in the circuit with an opening microswitch is substantiated from the physical point of view. This effect can be used to increase the efficiency of lightning protection system with a rod lightning protector. The processes which take place in the electric circuit of a lightning protector with a microswitch during a voltage breakdown are investigated. Openings of the microswitch are shown to lead to resonance overvoltages in the dc circuit and, as a result, efficient reduction in the breakdown voltage in a lightning protector-thundercloud air gap.

  9. Voltage breakdown follower avoids hard thermal constraints in a Geiger mode avalanche photodiode.

    PubMed

    Viterbini, M; Nozzoli, S; Poli, M; Adriani, A; Nozzoli, F; Ottaviano, A; Ponzo, S

    1996-09-20

    A novel approach to single-photon detection by means of an avalanche photodiode is described and preliminary results obtained by implementation of a prototype are reported. The electronic circuit (breakdown voltage follower) avoids the use of complex temperature controls typically used with these devices, thus reducing system complexity and cost. Data obtained without any thermoregulation show the same behavior with respect to systems thermoregulated to within a few hundredths of a degree celsius.

  10. Breakdown Voltage of Thermoplastics with Clay Nanometer-Sized Fillers (Postprint)

    DTIC Science & Technology

    2008-12-01

    surface flashover (without insulating gas or liquid immersion), and enable bulk breakdown. Sixty Hz ac voltage was applied from a Biddle 582040KV-3 KVA...Lawrence F. Drummy, John C. Horwath, Daniel L. Schweickart, and Richard A. Vaia Electrical Technology & Plasma Physics Branch Power Division... Plasma Physics Branch (AFRL/RZPE) Power Division Air Force Research Laboratory, Propulsion Directorate Wright-Patterson Air Force Base, OH 45433-7251

  11. High Voltage Distribution

    NASA Astrophysics Data System (ADS)

    Norbeck, Edwin; Miller, Michael; Onel, Yasar

    2010-11-01

    For detector arrays that require 5 to 10 kV at a few microamps each for hundreds of detectors, using hundreds of HV power supplies is unreasonable. Bundles of hundreds of HV cables take up space that should be filled with detectors. A typical HV module can supply 1 ma, enough current for hundreds of detectors. It is better to use a single HV module and distribute the current as needed. We show a circuit that, for each detector, measures the current, cuts off the voltage if the current exceeds a set maximum, and allows the HV to be turned on or off from a control computer. The entire array requires a single HV cable and 2 or 3 control lines. This design provides the same voltage to all of the detectors, the voltage set by the single HV module. Some additional circuitry would allow a computer controlled voltage drop between the HV and each individual detector.

  12. Low voltage to high voltage level shifter and related methods

    NASA Technical Reports Server (NTRS)

    Mentze, Erik J. (Inventor); Hess, Herbert L. (Inventor); Buck, Kevin M. (Inventor); Cox, David F. (Inventor)

    2006-01-01

    A shifter circuit comprises a high and low voltage buffer stages and an output buffer stage. The high voltage buffer stage comprises multiple transistors arranged in a transistor stack having a plurality of intermediate nodes connecting individual transistors along the stack. The transistor stack is connected between a voltage level being shifted to and an input voltage. An inverter of this stage comprises multiple inputs and an output. Inverter inputs are connected to a respective intermediate node of the transistor stack. The low voltage buffer stage has an input connected to the input voltage and an output, and is operably connected to the high voltage buffer stage. The low voltage buffer stage is connected between a voltage level being shifted away from and a lower voltage. The output buffer stage is driven by the outputs of the high voltage buffer stage inverter and the low voltage buffer stage.

  13. High Voltage Design Guidelines: A Timely Update

    NASA Technical Reports Server (NTRS)

    Hillard, G. Barry; Kirkici, H.; Ensworth, Clint (Technical Monitor)

    2001-01-01

    The evolving state of high voltage systems and their increasing use in the space program have called for a revision of the High Voltage Design Guidelines, Marshall Space Flight Center technical document MSFC-STD-531, originally issued September 1978 (previously 50 M05189b, October 1972). These guidelines deal in depth with issues relating to the specification of materials, particularly electrical insulation, as well as design practices and test methods. Emphasis is on corona and Paschen breakdown as well as plasma effects for Low Earth Orbiting systems. We will briefly review the history of these guidelines as well as their immediate predecessors and discuss their range of applicability. In addition, this document has served as the basis for several derived works that became focused, program-specific HV guidelines. We will briefly review two examples, guidelines prepared for the X-33 program and for the Space Shuttle Electric Auxiliary Power Unit (EAPU) upgrade.

  14. Calibration of Voltage Transformers and High- Voltage Capacitors at NIST

    PubMed Central

    Anderson, William E.

    1989-01-01

    The National Institute of Standards and Technology (NIST) calibration service for voltage transformers and high-voltage capacitors is described. The service for voltage transformers provides measurements of ratio correction factors and phase angles at primary voltages up to 170 kV and secondary voltages as low as 10 V at 60 Hz. Calibrations at frequencies from 50–400 Hz are available over a more limited voltage range. The service for high-voltage capacitors provides measurements of capacitance and dissipation factor at applied voltages ranging from 100 V to 170 kV at 60 Hz depending on the nominal capacitance. Calibrations over a reduced voltage range at other frequencies are also available. As in the case with voltage transformers, these voltage constraints are determined by the facilities at NIST. PMID:28053409

  15. Breakdown of atmospheric pressure microgaps at high excitation frequencies

    SciTech Connect

    Levko, Dmitry; Raja, Laxminarayan L.

    2015-05-07

    Microwave (mw) breakdown of atmospheric pressure microgaps is studied by a one-dimensional Particle-in-Cell Monte Carlo Collisions numerical model. The effect of both field electron emission and secondary electron emission (due to electron impact, ion impact, and primary electron reflection) from surfaces on the breakdown process is considered. For conditions where field emission is the dominant electron emission mechanism from the electrode surfaces, it is found that the breakdown voltage of mw microdischarge coincides with the breakdown voltage of direct-current (dc) microdischarge. When microdischarge properties are controlled by both field and secondary electron emission, breakdown voltage of mw microdischarge exceeds that of dc microdischarge. When microdischarge is controlled only by secondary electron emission, breakdown voltage of mw microdischarge is smaller than that of dc microdischarge. It is shown that if the interelectrode gap exceeds some critical value, mw microdischarge can be ignited only by electrons initially seeded within the gap volume. In addition, the influence of electron reflection and secondary emission due to electron impact is studied.

  16. Breakdown of atmospheric pressure microgaps at high excitation frequencies

    NASA Astrophysics Data System (ADS)

    Levko, Dmitry; Raja, Laxminarayan

    2015-09-01

    Microwave breakdown of atmospheric pressure microgaps was studied by a one-dimensional Particle-in-Cell Monte Carlo Collisions numerical model. The effect of both field electron emission and secondary electron emission (due to electron impact, ion impact, and primary electron reflection) from surfaces on the breakdown process is considered. For conditions where field emission is the dominant electron emission mechanism from the electrode surfaces, it is found that the breakdown voltage of mw microdischarge coincides with the breakdown voltage of direct-current microdischarge. When microdischarge properties are controlled by both field and secondary electron emission, breakdown voltage of mw microdischarge exceeds that of dc microdischarge. When microdischarge is controlled only by secondary electron emission, breakdown voltage of mw microdischarge is smaller than that of dc microdischarge. It is shown that if the interelectrode gap exceeds some critical value, mw microdischarge can be ignited only by electrons initially seeded within the gap volume. In addition, the influence of electron reflection and secondary emission due to electron impact is studied. This work was supported by the Air Force Office of Scientific Research.

  17. Breakdown of atmospheric pressure microgaps at high excitation frequencies

    NASA Astrophysics Data System (ADS)

    Levko, Dmitry; Raja, Laxminarayan L.

    2015-05-01

    Microwave (mw) breakdown of atmospheric pressure microgaps is studied by a one-dimensional Particle-in-Cell Monte Carlo Collisions numerical model. The effect of both field electron emission and secondary electron emission (due to electron impact, ion impact, and primary electron reflection) from surfaces on the breakdown process is considered. For conditions where field emission is the dominant electron emission mechanism from the electrode surfaces, it is found that the breakdown voltage of mw microdischarge coincides with the breakdown voltage of direct-current (dc) microdischarge. When microdischarge properties are controlled by both field and secondary electron emission, breakdown voltage of mw microdischarge exceeds that of dc microdischarge. When microdischarge is controlled only by secondary electron emission, breakdown voltage of mw microdischarge is smaller than that of dc microdischarge. It is shown that if the interelectrode gap exceeds some critical value, mw microdischarge can be ignited only by electrons initially seeded within the gap volume. In addition, the influence of electron reflection and secondary emission due to electron impact is studied.

  18. Comparative High Voltage Impulse Measurement

    PubMed Central

    FitzPatrick, Gerald J.; Kelley, Edward F.

    1996-01-01

    A facility has been developed for the determination of the ratio of pulse high voltage dividers over the range from 10 kV to 300 kV using comparative techniques with Kerr electro-optic voltage measurement systems and reference resistive voltage dividers. Pulse voltage ratios of test dividers can be determined with relative expanded uncertainties of 0.4 % (coverage factor k = 2 and thus a two standard deviation estimate) or less using the complementary resistive divider/Kerr cell reference systems. This paper describes the facility and specialized procedures used at NIST for the determination of test voltage divider ratios through comparative techniques. The error sources and special considerations in the construction and use of reference voltage dividers to minimize errors are discussed, and estimates of the measurement uncertainties are presented. PMID:27805083

  19. Spectral response measurements of multijunction solar cells with low shunt resistance and breakdown voltages

    PubMed Central

    Babaro, Juan P.; West, Kevin G.; Hamadani, Behrang H.

    2016-01-01

    Spectral response measurements of germanium-based triple-junction solar cells were performed under a variety of light and voltage bias conditions. Two of the three junctions exhibited voltage and light bias dependent artifacts in their measured responses, complicating the true spectral response of these junctions. To obtain more insight into the observed phenomena, a set of current-voltage measurement combinations were also performed on the solar cells under identical illumination conditions, and the data were used in the context of a diode-based analytical model to calculate and predict the spectral response behavior of each junction as a function of voltage. The analysis revealed that both low shunt resistance and low breakdown voltages in two of the three junctions influenced the measured quantum efficiency of all three junctions. The data and the modeling suggest that combination of current-voltage measurements under various light bias sources can reveal important information about the spectral response behavior in multijunction solar cells. PMID:28133534

  20. RF Breakdown in High Vacuum Multimegawatt X-Band Structures

    SciTech Connect

    Dolgashev, V

    2004-06-15

    Increasing the power handling capabilities of rf components is an important issue for the design of rf accelerators and rf sources. RF breakdown is a phenomena that limit the high power performance. A major concern is the damage that can occur in rf components from breakdown. To better understand this damage, we have studied rf breakdown in a rectangular waveguide experimentally and theoretically. The breakdown process in a waveguide is both easier to measure and simulate than breakdown in a complex geometry such as an accelerating structure. We used a particle tracking code and a Particle-In-Cell code to model the breakdown behavior. Models developed for the waveguide were applied to the breakdown in accelerating structures. RF breakdown in traveling wave and standing wave accelerating structures was simulated. We compare the experimental data with results of the simulations for the accelerating structures.

  1. Thyratron Marx High Voltage Generator.

    DTIC Science & Technology

    This invention relates to a high voltage pulse generator of the Marx type, in which capacitors are charged in parallel and discharged in series...Amongst the many techniques for producing high voltage pulses, the Marx generator is probably the best known and most widely used. For the combination of...short risetime and low output impendance (i.e. high power), large energy, high efficiency and waveform flexibility -- the Marx principle is peerless

  2. Electrical breakdown properties of stainless steel and titanium electrodes in ultra-high vacuum

    NASA Astrophysics Data System (ADS)

    Beukema, G. P.

    1981-02-01

    The breakdown voltage in ultra-high vacuum of stainless steel and titanium electrodes is measured as a function of the electrode separation in the range 0.05-0.80 mm. This relationship can be described by the simple equation Vb = Cda. Values for c and a are given for all electrode combinations. For titanium electrodes the current just before breakdown was about three times that for stainless steel electrodes. Comparative measurements with all combinations of stainless steel and titanium show that the cause of this difference must be sought in the anode. The microscopic breakdown field strength was a function of the emitting cathode area, as derived from Fowler-Nordheim plots. This dependence suggests that the breakdown was initiated by thermal instabilities at the anode due to field emission electrons. This is consistent with a theoretical analysis. Measurements of the pre-breakdown current allow an estimate of the number and dimensions of emitting sites.

  3. Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

    NASA Technical Reports Server (NTRS)

    Teverovsky, Alexander A.

    2011-01-01

    the processes under reverse bias conditions. In practice, there were instances when, due to unforeseen events, the system operated at conditions when capacitors experience periodically a relatively small reverse bias for some time followed by normal, forward bias conditions. In such a case an assessment should be made on the degree to which these capacitors are degraded by application of low-voltage reverse bias, and whether this degradation can be reversed by normal operating conditions. In this study, reverse currents in different types of tantalum capacitors were monitored at different reverse voltages below 15%VR and temperatures in the range from room to 145 C for up to 150 hours to get better understanding of the degradation process and determine conditions favorable to the unstable mode of operation. The reversibility of RB degradation has been evaluated after operation of the capacitors at forward bias conditions. The effect of reverse bias stress (RBS) on reliability at normal operating conditions was evaluated using highly accelerated life testing at voltages of 1.5VR and 2 VR and by analysis of changes in distributions of breakdown voltages. Possible mechanisms of RB degradation are discussed.

  4. High stored-energy breakdown tests on electrodes made of stainless steel, copper, titanium and molybdenum

    NASA Astrophysics Data System (ADS)

    de Esch, H. P. L.; Simonin, A.; Grand, C.

    2015-04-01

    IRFM have conducted resilience tests on electrodes made of Cu, stainless steel 304L, Ti and Mo against breakdowns up to 170 kV and 300 J. The tests of the 10×10 cm2 electrodes have been performed at an electrode distance d=11 mm under vacuum (P˜5×10-6 mbar). No great difference in voltage holding between the materials could be identified; all materials could reach a voltage holding between 140 and 170 kV over the 11 mm gap, i.e. results scatter within a ±10% band. After exposure to ˜10000 seconds of high-voltage (HV) on-time, having accumulated ˜1000 breakdowns, the electrodes were inspected. The anodes were covered with large and small craters. The rugosity of the anodes had increased substantially, that of the cathodes to a lesser extent. The molybdenum electrodes are least affected, but this does not show in their voltage holding capability. It is hypothesized that penetrating high-energy electrons from the breakdown project heat below the surface of the anode and cause a micro-explosion of material when melting point is exceeded. Polished electrodes have also been tested. The polishing results in a substantially reduced breakdown rate in the beginning, but after having suffered a relatively small number (˜100) of breakdowns, the polished electrodes behaved the same as the unpolished ones.

  5. High stored-energy breakdown tests on electrodes made of stainless steel, copper, titanium and molybdenum

    SciTech Connect

    Esch, H. P. L. de Simonin, A.; Grand, C.

    2015-04-08

    IRFM have conducted resilience tests on electrodes made of Cu, stainless steel 304L, Ti and Mo against breakdowns up to 170 kV and 300 J. The tests of the 10×10 cm{sup 2} electrodes have been performed at an electrode distance d=11 mm under vacuum (P∼5×10{sup −6} mbar). No great difference in voltage holding between the materials could be identified; all materials could reach a voltage holding between 140 and 170 kV over the 11 mm gap, i.e. results scatter within a ±10% band. After exposure to ∼10000 seconds of high-voltage (HV) on-time, having accumulated ∼1000 breakdowns, the electrodes were inspected. The anodes were covered with large and small craters. The rugosity of the anodes had increased substantially, that of the cathodes to a lesser extent. The molybdenum electrodes are least affected, but this does not show in their voltage holding capability. It is hypothesized that penetrating high-energy electrons from the breakdown project heat below the surface of the anode and cause a micro-explosion of material when melting point is exceeded. Polished electrodes have also been tested. The polishing results in a substantially reduced breakdown rate in the beginning, but after having suffered a relatively small number (∼100) of breakdowns, the polished electrodes behaved the same as the unpolished ones.

  6. Breakdown voltage improvement of standard MOS technologies targeted at smart power

    SciTech Connect

    Santos, P.M.; Simas, M.I.C.; Lanca, M.; Finco, S.; Behrens, F.H.

    1995-12-31

    This paper presents and discusses trade-offs of three different design techniques intended to improve the breakdown voltage of n-type lateral medium power transistors to be fabricated in a conventional low cost CMOS technology. A thorough analysis of the static and dynamic characteristics of the modified structures was carried out with the support of a two-dimensional device simulator. The motivation behind this work was the construction of a low cost smart power microsystem, including control, sensing and protection circuitries, targeted at an electronic ballast for efficient control of the power delivered to fluorescent lamps.

  7. Breakdown and space charge formation in polyimide film under DC high stress at various temperatures

    NASA Astrophysics Data System (ADS)

    Kishi, Y.; Hashimoto, T.; Miyake, H.; Tanaka, Y.; Takada, T.

    2009-08-01

    Relationship between breakdown strength and space charge formation in polyimide film under dc high stress at various temperatures is investigated using pulsed electro-acoustic (PEA) method. Some typical results of the space charge observations show that hetero space charges are always found before breakdown. The amount of the hetero charges increase with increase of temperature or increase of applied electric field. Since the enhancement of the internal electric field in the sample by the accumulation of the hetero charges is not so large, the accumulation doesn't seem to be an immediate cause of breakdown. However since it is always observed before breakdown, it may be predictive information for breakdown. In a certain case, the breakdown occurs after voltage application for few hours. However, while we give an interval of short circuit condition after observing the hetero space charge under dc stress, the total voltage application time to breakdown is almost the same to the case without the interval. It means that the hetero space charge generation may show a kind of degradation of the material.

  8. High voltage solar array experiments

    NASA Technical Reports Server (NTRS)

    Kennerud, K. L.

    1974-01-01

    The interaction between the components of a high voltage solar array and a simulated space plasma is studied to obtain data for the design of a high voltage solar array capable of 15kW at 2 to 16kV. Testing was conducted in a vacuum chamber 1.5-m long by 1.5-m diameter having a plasma source which simulated the plasma conditions existing in earth orbit between 400 nautical miles and synchronous altitude. Test samples included solar array segments pinholes in insulation covering high voltage electrodes, and plain dielectric samples. Quantitative data are presented in the areas of plasma power losses, plasma and high voltage induced damage, and dielectric properties. Limitations of the investigation are described.

  9. Subnanosecond Breakdown of Insulating Media

    DTIC Science & Technology

    2006-09-29

    50so O0 PRESSURE Itorr] Fig. 6. Breakdown voltage for argon and air with 100 kV pulser amplitude Breakdown voltages for surface flashover differ from the...developments in the field of high speed/high power electromagnetics applica- tions, such as Ultrawideband (UWB) radar, plasma limiters, and fast general...voltages for short pulses is of relevance for many switching and insulation tasks, for both volume breakdown in differ- ent media as well as for surface

  10. High voltage power transistor development

    NASA Technical Reports Server (NTRS)

    Hower, P. L.

    1981-01-01

    Design considerations, fabrication procedures, and methods of evaluation for high-voltage power-transistor development are discussed. Technique improvements such as controlling the electric field at the surface and perserving lifetimes in the collector region which have advanced the state of the art in high-voltage transistors are discussed. These improvements can be applied directly to the development of 1200 volt, 200 ampere transistors.

  11. High voltage, low inductance hydrogen thyratron study program, phase 5

    NASA Astrophysics Data System (ADS)

    Friedman, S.

    1983-08-01

    50 kv per stage dynamic breakdown voltage (DBV) was demonstrated in low inductance multistage hydrogen thyratrons for total voltages up to nearly 200 kv, at pressures consistent with a 10 ns current rise time. High peak current operation has been demonstrated up to 14 ka at 56 kv (the limits of our high current test kit). Bottom stage holdoff the per stage DBV are comparable to that of the best single stage thyratrons, bottom stage holdoff, stage voltage addition, and prefire problems are solved.

  12. Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect

    NASA Astrophysics Data System (ADS)

    Zheng, Zhi; Li, Wei; Li, Ping

    2013-04-01

    A non-depletion floating layer silicon-on-insulator (NFL SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) is proposed and the NFL-assisted modulated field (NFLAMF) principle is investigated in this paper. Based on this principle, the floating layer can pin the potential for modulating bulk field. In particular, the accumulated high concentration of holes at the bottom of the NFL can efficiently shield the electric field of the SOI layer and enhance the dielectric field in the buried oxide layer (BOX). At variation of back-gate bias, the shielding charges of NFL can also eliminate back-gate effects. The simulated results indicate that the breakdown voltage (BV) is increased from 315 V to 558 V compared to the conventional reduced surface field (RESURF) SOI (CSOI) LDMOS, yielding a 77% improvement. Furthermore, due to the field shielding effect of the NFL, the device can maintain the same breakdown voltage of 558 V with a thinner BOX to resolve the thermal problem in an SOI device.

  13. A method for encapsulating high voltage power transformers

    SciTech Connect

    Sanchez, R.O.

    1990-01-01

    Voltage breakdowns become a major concern in reducing the size of high-voltage power converter transformers. Even the smallest of voids can provide a path for corona discharge which can cause a dielectric breakdown leading to a transformer failure. A method of encapsulating small high voltage transformers has been developed. The method virtually eliminates voids in the impregnation material, provides an exceptional dielectric between windings and provides a mechanically rugged package. The encapsulation material is a CTBN modified mica filled epoxy. The method requires heat/vacuum to impregnate the coil and heat/pressure to cure the encapsulant. The transformer package utilizes a Diallyl Phthalate (DAP) contact assembly in which a coated core/coil assembly is mounted and soldered. This assembly is then loaded into an RTV mold and the encapsulation process begins.

  14. Analysis of breakdown voltage of area surrounded by multiple trench gaps in 4 kV monolithic isolator for communication network interface

    NASA Astrophysics Data System (ADS)

    Takeuchi, Yusuke; Kuroda, Rihito; Sugawa, Shigetoshi

    2015-04-01

    We analyzed the shared voltages of multiple trench gaps on a silicon-on-insulator (SOI) substrate and showed the conditions for improving the breakdown voltage surrounded by these isolated structures. We introduced a unified impedance model instead of the capacitive model of trench gaps and determined the effective conditions for improving the breakdown voltage. The first condition is to reduce the impedance of trench gaps. In this case, the leak current gives a low limit of trench gap resistance. The second condition is to increase the substrate resistance. As silicon substrate resistance is not very high, this condition is not useful for the silicon substrate, but for other materials such as ceramics. We confirmed the effectiveness of these conditions from the simulation and experimental results of a fabricated chip.

  15. Analysis Code for High Gradient Dielectric Insulator Surface Breakdown

    SciTech Connect

    Ives, Robert Lawrence; Verboncoeur, John; Aldan, Manuel

    2010-05-30

    High voltage (HV) insulators are critical components in high-energy, accelerator and pulsed power systems that drive diverse applications in the national security, nuclear weapons science, defense and industrial arenas. In these systems, the insulator may separate vacuum/non-vacuum regions or conductors with high electrical field gradients. These insulators will often fail at electric fields over an order of magnitude lower than their intrinsic dielectric strength due to flashover at the dielectric interface. Decades of studies have produced a wealth of information on fundamental processes and mechanisms important for flashover initiation, but only for relatively simple insulator configurations in controlled environments. Accelerator and pulsed power system designers are faced with applying the fundamental knowledge to complex, operational devices with escalating HV requirements. Designers are forced to rely on “best practices” and expensive prototype testing, providing boundaries for successful operation. However, the safety margin is difficult to estimate, and system design must be very conservative for situations where testing is not practicable, or replacement of failed parts is disruptive or expensive. The Phase I program demonstrated the feasibility of developing an advanced code for modeling insulator breakdown. Such a code would be of great interest for a number of applications, including high energy physics, microwave source development, fusion sciences, and other research and industrial applications using high voltage devices.

  16. Improved Programmable High-Voltage Power Supply

    NASA Technical Reports Server (NTRS)

    Castell, Karen; Rutberg, Arthur

    1994-01-01

    Improved dc-to-dc converter functions as programmable high-voltage power supply with low-power-dissipation voltage regulator on high-voltage side. Design of power supply overcomes deficiencies of older designs. Voltage regulation with low power dissipation provided on high-voltage side.

  17. High voltage thermal cells

    NASA Astrophysics Data System (ADS)

    Ryan, David M.

    An experiment aimed at a search for new, high-energy cathodes for thermal cells is described. The experiment has begun to reduce the solubility, volatility, and mobility of the cathode materials by preparing and testing massive, relatively immobile cathode molecules. A good candidate for this is the vanadium series, which forms rings, chains, clusters and Keggin compounds. The first three compounds of this genre have been prepared: K3V5O14, Na6V10O28, and K7(Ni4+V13O30). Only the first of these compounds has been tested as a cathode material. The K3V5O14 demonstrated better performance than V2O5, but it is not as good as the FeS2 cells used for benchmarks.

  18. Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes

    NASA Astrophysics Data System (ADS)

    Yuan, Hao; Tang, Xiaoyan; Song, Qingwen; Zhang, Yimen; Zhang, Yuming; Yang, Fei; Niu, Yingxi

    2015-01-01

    The analytical models of on-resistance and reverse breakdown voltage for 4H-SiC floating junction SBD are presented with the analysis of the transport path of the carriers and electric field distribution in the drift region. The calculation results from the analytical models well agree with the simulation results. The effects of the key structure parameters on specific on-resistance and breakdown voltage are described respectively by analytical models. Moreover, the relationship between BFOM and parameters of floating junction are investigated. It is proved that the analytical models are more convenient for the design of the floating junction SBDs.

  19. Impact of drift gap, N-layer, and deep N+ sinker on breakdown voltage and saturation current of lateral double-diffused metal oxide semiconductor transistor.

    PubMed

    Sung, Kunsik; Won, Taeyoung

    2011-08-01

    In this paper, we discuss on the optimal design of a High-Side n-channel Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor (LDMOSFET) whose breakdown voltage is over 100 V with 0.35 microm Bipolar-CMOS-DMOS (BCD) process. The proposed nLDMOSFET has been fabricated and tested in order to confirm the features of a deep N+ sinker and a gap of between the drift region (DEEP N-WELL) and the center of the source. The surface is implanted by the N-layer for high breakdown voltage and simultaneously the low specific on-resistance. The computer simulation of the proposed High-Side LDMOS exhibits BVdss of 115 V and Ron,sp of as low as 2.20 m ohms cm2, which is consistent with the experimental results.

  20. Transport phenomena in polymer electrolyte membrane fuel cells via voltage loss breakdown

    NASA Astrophysics Data System (ADS)

    Flick, Sarah; Dhanushkodi, Shankar R.; Mérida, Walter

    2015-04-01

    This study presents a voltage loss breakdown method based on in-situ experimental data to systematically analyze the different overpotentials of a polymer electrolyte membrane fuel cell. This study includes a systematic breakdown of the anodic overpotentials via the use of a reference electrode system. This work demonstrates the de-convolution of the individual overpotentials for both anode and cathode side, including the distinction between mass-transport overpotentials in cathode porous transport layer (PTL) and electrode, based on in-situ polarization tests under different operating conditions. This method is used to study the relationship between mass-transport losses inside the cathode catalyst layer (CL) and the PTL for both a single layer and two-layer PTL configuration. We conclude that the micro-porous layer (MPL) significantly improves the water removal within the cell, especially inside the cathode electrode, and therefore the mass transport within the cathode CL. This study supports the theory that the MPL on the cathode leads to an increase in water permeation from cathode to anode due to its function as a capillary barrier. This is reflected in increased anodic mass-transport overpotential, decreased ohmic losses and decreased cathode mass-transport losses, especially in the cathode electrode.

  1. The high voltage homopolar generator

    NASA Astrophysics Data System (ADS)

    Price, J. H.; Gully, J. H.; Driga, M. D.

    1986-11-01

    System and component design features of proposed high voltage homopolar generator (HVHPG) are described. The system is to have an open circuit voltage of 500 V, a peak output current of 500 kA, 3.25 MJ of stored inertial energy and possess an average magnetic-flux density of 5 T. Stator assembly components are discussed, including the stator, mount structure, hydrostatic bearings, main and motoring brushgears and rotor. Planned operational procedures such as monitoring the rotor to full speed and operation with a superconducting field coil are delineated.

  2. High Voltage Space Solar Arrays

    NASA Technical Reports Server (NTRS)

    Ferguson, D. C.; Hillard, G. B.; Vayner, B. V.; Galofaro, J. T.; Lyons, Valerie (Technical Monitor)

    2002-01-01

    Recent tests performed at the NASA Glenn Research Center and elsewhere have shown promise in the design and construction of high voltage (300-1000 V) solar arrays for space applications. Preliminary results and implications for solar array design will be discussed, with application to direct-drive electric propulsion and space solar power.

  3. High-temperature enzymatic breakdown of cellulose.

    PubMed

    Wang, Hongliang; Squina, Fabio; Segato, Fernando; Mort, Andrew; Lee, David; Pappan, Kirk; Prade, Rolf

    2011-08-01

    Cellulose is an abundant and renewable biopolymer that can be used for biofuel generation; however, structural entrapment with other cell wall components hinders enzyme-substrate interactions, a key bottleneck for ethanol production. Biomass is routinely subjected to treatments that facilitate cellulase-cellulose contacts. Cellulases and glucosidases act by hydrolyzing glycosidic bonds of linear glucose β-1,4-linked polymers, producing glucose. Here we describe eight high-temperature-operating cellulases (TCel enzymes) identified from a survey of thermobacterial and archaeal genomes. Three TCel enzymes preferentially hydrolyzed soluble cellulose, while two preferred insoluble cellulose such as cotton linters and filter paper. TCel enzymes had temperature optima ranging from 85°C to 102°C. TCel enzymes were stable, retaining 80% of initial activity after 120 h at 85°C. Two modes of cellulose breakdown, i.e., with endo- and exo-acting glucanases, were detected, and with two-enzyme combinations at 85°C, synergistic cellulase activity was observed for some enzyme combinations.

  4. LHCb calorimeters high voltage system

    NASA Astrophysics Data System (ADS)

    Gilitsky, Yu.; Golutvin, A.; Konoplyannikov, A.; Lefrancois, J.; Perret, P.; Schopper, A.; Soldatov, M.; Yakimchuk, V.

    2007-02-01

    The calorimeter system in LHCb aims to identify electrons, photons and hadrons. All calorimeters are equipped with Hamamatsu photo tubes as devices for light to signal conversion. Eight thousand R7899-20 tubes are used for electromagnetic and hadronic calorimeters and two hundred 64 channels multi-anode R7600-00-M64 for Scintillator-Pad/Preshower detectors. The calorimeter high voltage (HV) system is based on a Cockroft Walton (CW) voltage converter and a control board connected to the Experiment Control System (ECS) by serial bus. The base of each photomultiplier tube (PMT) is built with a high voltage converter and constructed on an individual printed circuit board, using compact surface mount components. The base is attached directly to the PMT. There are no HV cables in the system. A Field Programmable Gate Array (FPGA) is used on the control board as an interface between the ECS and the 200 control channels. The FPGA includes also additional functionalities allowing automated monitoring and ramp up of the high voltage values. This paper describes the HV system architecture, some technical details of the electronics implementation and summarizes the system performance. This safe and low power consumption HV electronic system for the photomultiplier tubes can be used for various biomedical apparatus too.

  5. Compact high-voltage structures

    SciTech Connect

    Wilson, M. J.; Goerz, D.A.

    1997-06-09

    A basic understanding of the critical issues limiting the compactness of high-voltage systems is required for the next generation of impulse generators. In the process of optimizing the design of a highly reliable solid-dielectric over-voltage switch, an understanding of the limiting factors found are shown. Results of a l3O kV operating switch, having a modest field enhancement of 16% above the average field stress in the switching region, are reported. The resulting high reliability is obtained by reducing the standard deviation of the switch to 6.8%. The total height of the switch is 1 mm. The resulting operating parameters are obtained by controlling field distribution across the entire switch package and field shaping the desired point of switch closure. The disclosed field management technique provides an approach to improve other highly stressed components and structures.

  6. High-Voltage Droplet Dispenser

    NASA Technical Reports Server (NTRS)

    Eichenberg, Dennis J.

    2003-01-01

    An apparatus that is extremely effective in dispensing a wide range of droplets has been developed. This droplet dispenser is unique in that it utilizes a droplet bias voltage, as well as an ionization pulse, to release a droplet. Apparatuses that deploy individual droplets have been used in many applications, including, notably, study of combustion of liquid fuels. Experiments on isolated droplets are useful in that they enable the study of droplet phenomena under well-controlled and simplified conditions. In this apparatus, a syringe dispenses a known value of liquid, which emerges from, and hangs onto, the outer end of a flat-tipped, stainless steel needle. Somewhat below the needle tip and droplet is a ring electrode. A bias high voltage, followed by a high-voltage pulse, is applied so as to attract the droplet sufficiently to pull it off the needle. The voltages are such that the droplet and needle are negatively charged and the ring electrode is positively charged.

  7. An AlGaN/GaN HEMT with a reduced surface electric field and an improved breakdown voltage

    NASA Astrophysics Data System (ADS)

    Xie, Gang; Edward, Xu; Niloufar, Hashemi; Zhang, Bo; Fred, Y. Fu; Wai, Tung Ng

    2012-08-01

    A reduced surface electric field in an AlGaN/GaN high electron mobility transistor (HEMT) is investigated by employing a localized Mg-doped layer under the two-dimensional electron gas (2-DEG) channel as an electric field shaping layer. The electric field strength around the gate edge is effectively relieved and the surface electric field is distributed evenly as compared with those of HEMTs with conventional source-connected field plate and double field plate structures with the same device physical dimensions. Compared with the HEMTs with conventional source-connected field plates and double field plates, the HEMT with a Mg-doped layer also shows that the breakdown location shifts from the surface of the gate edge to the bulk Mg-doped layer edge. By optimizing both the length of Mg-doped layer, Lm, and the doping concentration, a 5.5 times and 3 times the reduction in the peak electric field near the drain side gate edge is observed as compared with those of the HEMTs with source-connected field plate structure and double field plate structure, respectively. In a device with VGS = -5 V, Lm = 1.5 μm, a peak Mg doping concentration of 8×1017 cm-3 and a drift region length of 10 μm, the breakdown voltage is observed to increase from 560 V in a conventional device without field plate structure to over 900 V without any area overhead penalty.

  8. High voltage photovoltaic power converter

    DOEpatents

    Haigh, Ronald E.; Wojtczuk, Steve; Jacobson, Gerard F.; Hagans, Karla G.

    2001-01-01

    An array of independently connected photovoltaic cells on a semi-insulating substrate contains reflective coatings between the cells to enhance efficiency. A uniform, flat top laser beam profile is illuminated upon the array to produce electrical current having high voltage. An essentially wireless system includes a laser energy source being fed through optic fiber and cast upon the photovoltaic cell array to prevent stray electrical signals prior to use of the current from the array. Direct bandgap, single crystal semiconductor materials, such as GaAs, are commonly used in the array. Useful applications of the system include locations where high voltages are provided to confined spaces such as in explosive detonation, accelerators, photo cathodes and medical appliances.

  9. TRANSISTOR HIGH VOLTAGE POWER SUPPLY

    DOEpatents

    Driver, G.E.

    1958-07-15

    High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

  10. High Voltage Conductors in Spacecraft

    DTIC Science & Technology

    1993-05-07

    STATEMENT Approved for public release; distribution is 93-16916 unlimited. I I III i 13. ABSTRACT (Maximum 200 words) Future solar arrays are being...Master of Science in Aeronautics and Astronautics Future solar arrays are being designed for much higher voltages in order to meet high power demands...5 Conclusions 85 5.1 Summary of Results .................................... 5.2 Recommendations for Future Work

  11. Breakdown in ZnO Varistors by High Power Electrical Pulses

    SciTech Connect

    PIKE,GORDON E.

    2001-07-01

    This report documents an investigation of irreversible electrical breakdown in ZnO varistors due to short pulses of high electric field and current density. For those varistors that suffer breakdown, there is a monotonic, pulse-by-pulse degradation in the switching electric field. The electrical and structural characteristics of varistors during and after breakdown are described qualitatively and quantitatively. Once breakdown is nucleated, the degradation typically follows a well-defined relationship between the number of post-initiation pulses and the degraded switching voltage. In some cases the degraded varistor has a remnant 20 {micro}m diameter hollow track showing strong evidence of once-molten ZnO. A model is developed for both electrical and thermal effects during high energy pulsing. The breakdown is assumed to start at one electrode and advance towards the other electrode as a thin filament of conductive material that grows incrementally with each successive pulse. The model is partially validated by experiments in which the varistor rod is cut at several different lengths from the electrode. Invariably one section of the cut varistor has a switching field that is not degraded while the other section(s) are heavily degraded. Based on the experiments and models of behavior during breakdown, some speculations about the nature of the nucleating mechanism are offered in the last section.

  12. Statistical characteristics of transient enclosure voltage in ultra-high-voltage gas-insulated switchgear

    NASA Astrophysics Data System (ADS)

    Cai, Yuanji; Guan, Yonggang; Liu, Weidong

    2017-06-01

    Transient enclosure voltage (TEV), which is a phenomenon induced by the inner dielectric breakdown of SF6 during disconnector operations in a gas-insulated switchgear (GIS), may cause issues relating to shock hazard and electromagnetic interference to secondary equipment. This is a critical factor regarding the electromagnetic compatibility of ultra-high-voltage (UHV) substations. In this paper, the statistical characteristics of TEV at UHV level are collected from field experiments, and are analyzed and compared to those from a repeated strike process. The TEV waveforms during disconnector operations are recorded by a self-developed measurement system first. Then, statistical characteristics, such as the pulse number, duration of pulses, frequency components, magnitude and single pulse duration, are extracted. The transmission line theory is introduced to analyze the TEV and is validated by the experimental results. Finally, the relationship between the TEV and the repeated strike process is analyzed. This proves that the pulse voltage of the TEV is proportional to the corresponding breakdown voltage. The results contribute to the definition of the standard testing waveform of the TEV, and can aid the protection of electronic devices in substations by minimizing the threat of this phenomenon.

  13. High voltage RF feedthrough bushing

    DOEpatents

    Grotz, Glenn F.

    1984-01-01

    Described is a multi-element, high voltage radio frequency bushing for trmitting RF energy to an antenna located in a vacuum container. The bushing includes a center conductor of complex geometrical shape, an outer coaxial shield conductor, and a thin-walled hollow truncated cone insulator disposed between central and outer conductors. The shape of the center conductor, which includes a reverse curvature portion formed of a radially inwardly directed shoulder and a convex portion, controls the uniformity of the axial surface gradient on the insulator cone. The outer shield has a first substantially cylindrical portion and a second radially inwardly extending truncated cone portion.

  14. High Voltage TAL Erosion Characterization

    NASA Technical Reports Server (NTRS)

    Jacobson, David T.

    2003-01-01

    Extended operation of a D-80 anode layer thruster at high voltage was investigated. The thruster was operated for 1200 hours at 700 Volts and 4 Amperes. Laser profilometry was employed to quantify the erosion of the thruster's graphite guard rings and electrodes at 0, 300, 600, 900, and 1200 hours. Thruster performance and electrical characteristics were monitored over the duration of the investigation. The guard rings exhibited asymmetric erosion that was greatest in the region of the cathode. Erosion of the guard rings exposed the magnet poles between 600 to 900 hours of operation.

  15. High voltage battery cell scanner development

    NASA Technical Reports Server (NTRS)

    Lepisto, J. W.; Decker, D. K.; Graves, J.

    1983-01-01

    Battery cell voltage scanners have been previously used in low voltage spacecraft applications. In connection with future missions involving an employment of high-power high voltage power subsystems and/or autonomous power subsystem management for unattended operation, it will be necessary to utilize battery cell voltage scanners to provide battery cell voltage information for early detection of impending battery cell degradation/failures. In preparation for such missions, a novel battery cell voltage scanner design has been developed. The novel design makes use of low voltage circuit modules which can be applied to high voltage batteries in a building block fashion. A description is presented of the design concept and test results of the high voltage battery cell scanner, and its operation with an autonomously managed power subsystem is discussed.

  16. A compact, all solid-state LC high voltage generator.

    PubMed

    Fan, Xuliang; Liu, Jinliang

    2013-06-01

    LC generator is widely applied in the field of high voltage generation technology. A compact and all solid-state LC high voltage generator based on saturable pulse transformer is proposed in this paper. First, working principle of the generator is presented. Theoretical analysis and circuit simulation are used to verify the design of the generator. Experimental studies of the proposed LC generator with two-stage main energy storage capacitors are carried out. And the results show that the proposed LC generator operates as expected. When the isolation inductance is 27 μH, the output voltage is 1.9 times larger than the charging voltage on single capacitor. The multiplication of voltages is achieved. On the condition that the primary energy storage capacitor is charged to 857 V, the output voltage of the generator can reach to 59.5 kV. The step-up ratio is nearly 69. When self breakdown gas gap switch is used as main switch, the rise time of the voltage pulse on load resistor is 8.7 ns. It means that the series-wound inductance in the discharging circuit is very small in this system. This generator can be employed in two different applications.

  17. A compact, all solid-state LC high voltage generator

    NASA Astrophysics Data System (ADS)

    Fan, Xuliang; Liu, Jinliang

    2013-06-01

    LC generator is widely applied in the field of high voltage generation technology. A compact and all solid-state LC high voltage generator based on saturable pulse transformer is proposed in this paper. First, working principle of the generator is presented. Theoretical analysis and circuit simulation are used to verify the design of the generator. Experimental studies of the proposed LC generator with two-stage main energy storage capacitors are carried out. And the results show that the proposed LC generator operates as expected. When the isolation inductance is 27 μH, the output voltage is 1.9 times larger than the charging voltage on single capacitor. The multiplication of voltages is achieved. On the condition that the primary energy storage capacitor is charged to 857 V, the output voltage of the generator can reach to 59.5 kV. The step-up ratio is nearly 69. When self breakdown gas gap switch is used as main switch, the rise time of the voltage pulse on load resistor is 8.7 ns. It means that the series-wound inductance in the discharging circuit is very small in this system. This generator can be employed in two different applications.

  18. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

    SciTech Connect

    Qi, Meng; Zhao, Yuning; Yan, Xiaodong; Li, Guowang; Verma, Jai; Fay, Patrick; Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Protasenko, Vladimir; Song, Bo; Xing, Huili Grace; Jena, Debdeep; Bader, Samuel

    2015-12-07

    Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

  19. Breakdown voltage improvement of LDMOSs by charge balancing: An inserted P-layer in trench oxide (IPT-LDMOS)

    NASA Astrophysics Data System (ADS)

    Orouji, Ali A.; Mehrad, Mahsa

    2012-03-01

    For the first time, the novel inserted P-layer in trench oxide of LDMOS structure (IPT-LDMOS) is proposed in which a trench oxide with inserted P-layer is considered in the drift region to improve the breakdown voltage. Our simulation with two dimensional ALTAS simulator shows that by determining the optimum doping concentration of the P-layer, the charges of the N-drift and P-layer regions would be balanced. Therefore, complete depletion at the breakdown voltage in the drift region happens. Also, electric field in the IPT-LDMOS is modified by producing additional peaks which decrease the common peaks near the drain and source junctions.

  20. High-Power Microwave Breakdown of Dielectric Interfaces.

    NASA Astrophysics Data System (ADS)

    Calico, Steve Eugene

    A project to study the electrical breakdown of microwave windows due to high-power pulsed microwave fields was undertaken at Texas Tech University. The pulsed power equipment was acquired from the Air Force Weapons Laboratory in Albuquerque, NM, refurbished and redesigned as necessary, and serves as the high-power microwave source. The microwaves are used to test various vacuum to atmosphere interfaces (windows) in an attempt to isolate the mechanisms governing the electrical breakdown at the window. Windows made of three different materials and of three basic geometrical designs were tested in this experiment. Additionally, the surfaces of two windows were sanded with different grit sandpapers to determine the effect the surface texture has on the breakdown. The windows were tested in atmospheric pressure air, argon, helium, and to a lesser extent sulfur-hexafluoride. Estimates of the breakdown threshold in air and argon on a Lexan window were obtained as a consequence of these tests and were found to be considerably lower than that reported for pulsed microwave breakdown in gases. A hypothesis is presented in an attempt to explain the lower breakdown phenomena. A discussion of the comparative performance of the windows and an explanation as to the enhanced performance of some windows is given.

  1. Recent advances of high voltage AlGaN/GaN power HFETs

    NASA Astrophysics Data System (ADS)

    Uemoto, Yasuhiro; Ueda, Tetsuzo; Tanaka, Tsuyoshi; Ueda, Daisuke

    2009-02-01

    We review our recent advances of GaN-based high voltage power transistors. These are promising owing to low on-state resistance and high breakdown voltage taking advantages of superior material properties. However, there still remain a couple of technical issues to be solved for the GaN devices to replace the existing Si-based power devices. The most critical issue is to achieve normally-off operation which is strongly desired for the safety operation, however, it has been very difficult because of the built-in polarization electric field. Our new device called GIT (Gate Injection Transistor) utilizing conductivity modulation successfully achieves the normally-off operation keeping low on-state resistance. The fabricated GIT on a Si substrate exhibits threshold voltage of +1.0V. The obtained on-state resistance and off-state breakdown voltage were 2.6mΩ•cm2 and 800V, respectively. Remaining technical issue is to further increase the breakdown voltage. So far, the reported highest off-state breakdown voltage of AlGaN/GaN HFETs has been 1900V. Overcoming these issues by a novel device structure, we have demonstrated the world highest breakdown voltages of 10400V using thick poly-crystalline AlN as a passivation film and Via-holes through sapphire which enable very efficient layout of the lateral HFET array avoiding any undesired breakdown of passivation films. Since conventional wet or dry etching cannot be used for chemically stable sapphire, high power pulsed laser is used to form the via-holes. The presented GaN power devices demonstrate that GaN is advantageous for high voltage power switching applications replacing currently used Si-based power MOSFETs and IGBTs.

  2. Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV

    NASA Astrophysics Data System (ADS)

    Hayashida, Tetsuro; Nanjo, Takuma; Furukawa, Akihiko; Yamamuka, Mikio

    2017-06-01

    In this study, we successfully fabricated vertical GaN merged PiN Schottky (MPS) diodes and comparatively investigated the cyclic p-GaN width (W p) dependence of their electrical characteristics, including turn-on voltage and reverse leakage current. The MPS diodes with W p of more than 6 µm can turn on at around 3 V. Increasing W p can suppress the reverse leakage current. Moreover, the vertical GaN MPS diode with the breakdown voltage of 2 kV was realized for the first time.

  3. High voltage feed through bushing

    DOEpatents

    Brucker, J.P.

    1993-04-06

    A feed through bushing for a high voltage diode provides for using compression sealing for all sealing surfaces. A diode assembly includes a central conductor extending through the bushing and a grading ring assembly circumferentially surrounding and coaxial with the central conductor. A flexible conductive plate extends between and compressively seals against the central conductor and the grading ring assembly, wherein the flexibility of the plate allows inner and outer portions of the plate to axially translate for compression sealing against the central conductor and the grading ring assembly, respectively. The inner portion of the plate is bolted to the central conductor for affecting sealing. A compression beam is also bolted to the central conductor and engages the outer portion of the plate to urge the outer portion toward the grading ring assembly to obtain compression sealing therebetween.

  4. High voltage load resistor array

    DOEpatents

    Lehmann, Monty Ray

    2005-01-18

    A high voltage resistor comprising an array of a plurality of parallel electrically connected resistor elements each containing a resistive solution, attached at each end thereof to an end plate, and about the circumference of each of the end plates, a corona reduction ring. Each of the resistor elements comprises an insulating tube having an electrode inserted into each end thereof and held in position by one or more hose clamps about the outer periphery of the insulating tube. According to a preferred embodiment, the electrode is fabricated from stainless steel and has a mushroom shape at one end, that inserted into the tube, and a flat end for engagement with the end plates that provides connection of the resistor array and with a load.

  5. A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer

    NASA Astrophysics Data System (ADS)

    Luo, Xiao-Rong; Wang, Yuan-Gang; Deng, Hao; Florin, Udrea

    2010-07-01

    A novel partial silicon-on-insulator (PSOI) high voltage device with a low-k (relative permittivity) dielectric buried layer (LK PSOI) and its breakdown mechanism are presented and investigated by MEDICI. At a low k value the electric field strength in the dielectric buried layer (EI) is enhanced and a Si window makes the substrate share the vertical drop, resulting in a high vertical breakdown voltage; in the lateral direction, a high electric field peak is introduced at the Si window, which modulates the electric field distribution in the SOI layer; consequently, a high breakdown voltage (BV) is obtained. The values of EI and BV of LK PSOI with kI = 2 on a 2 μm thick SOI layer over 1 μm thick buried layer are enhanced by 74% and 19%, respectively, compared with those of the conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect.

  6. Breakdown Limit Studies in High-Rate Gaseous Detectors

    NASA Technical Reports Server (NTRS)

    Ivaniouchenkov, Yu; Fonte, P.; Peskov, V.; Ramsey, B. D.

    1999-01-01

    We report results from a systematic study of breakdown limits for novel high-rate gaseous detectors: MICROMEGAS, CAT and GEM, together with more conventional devices such as thin-gap parallel-mesh chambers and high-rate wire chambers. It was found that for all these detectors, the maximum achievable pin, before breakdown appears, drops dramatically with incident flux, and is sometimes inversely proportional to it. Further, in the presence of alpha particles, typical of the breakgrounds in high-energy experiments, additional gain drops of 1-2 orders of magnitude were observed for many detectors. It was found that breakdowns at high rates occur through what we have termed an "accumulative" mechanism, which does not seem to have been previously reported in the literature. Results of these studies may help in choosing the optimum detector for given experimental conditions.

  7. Low power, scalable multichannel high voltage controller

    DOEpatents

    Stamps, James Frederick; Crocker, Robert Ward; Yee, Daniel Dadwa; Dils, David Wright

    2006-03-14

    A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

  8. Low power, scalable multichannel high voltage controller

    DOEpatents

    Stamps, James Frederick; Crocker, Robert Ward; Yee, Daniel Dadwa; Dils, David Wright

    2008-03-25

    A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

  9. Simulating and modeling the breakdown voltage in a semi-insulating GaAs P+N junction diode

    NASA Astrophysics Data System (ADS)

    Resfa, A.; Menezla, Brahimi. R.; Benchhima, M.

    2014-08-01

    This work aims to determine the characteristic I (breakdown voltage) of the inverse current in a GaAs PN junction diode, subject to a reverse polarization, while specifying the parameters that influence the breakdown voltage of the diode. In this work, we simulated the behavior of the ionization phenomenon by impact breakdown by avalanche of the PN junctions, subject to an inverse polarization. We will take into account both the trapping model in a stationary regime in the P+N structure using like material of basis the III-V compounds and mainly the GaAs semi-insulating in which the deep centers have in important densities. We are talking about the model of trapping in the space charge region (SCR) and that is the trap density donor and acceptor states. The carrier crossing the space charge region (SCR) of W thickness creates N electron—hole pairs: for every created pair, the electron and the hole are swept quickly by the electric field, each in an opposite direction, which comes back, according to an already accepted reasoning, to the crossing of the space charge region (SCR) by an electron or a hole. So the even N pair created by the initial particle provoke N2 ionizations and so forth. The study of the physical and electrical behaviour of semiconductors is based on the influence of the presence of deep centers on the characteristic I(V) current-tension, which requires the calculation of the electrostatic potential, the electric field, the integral of ionization, the density of the states traps, the diffusion current of minority in the regions (1) and (3), the current thermal generation in the region (2), the leakage current in the surface, and the breakdown voltage.

  10. The Dynamic Fracture Process in Rocks Under High-Voltage Pulse Fragmentation

    NASA Astrophysics Data System (ADS)

    Cho, Sang Ho; Cheong, Sang Sun; Yokota, Mitsuhiro; Kaneko, Katsuhiko

    2016-10-01

    High-voltage pulse technology has been applied to rock excavation, liberation of microfossils, drilling of rocks, oil and water stimulation, cleaning castings, and recycling products like concrete and electrical appliances. In the field of rock mechanics, research interest has focused on the use of high-voltage pulse technology for drilling and cutting rocks over the past several decades. In the use of high-voltage pulse technology for drilling and cutting rocks, it is important to understand the fragmentation mechanism in rocks subjected to high-voltage discharge pulses to improve the effectiveness of drilling and cutting technologies. The process of drilling rocks using high-voltage discharge is employed because it generates electrical breakdown inside the rocks between the anode and cathode. In this study, seven rock types and a cement paste were electrically fractured using high-voltage pulse discharge to investigate their dielectric breakdown properties. The dielectric breakdown strengths of the samples were compared with their physical and mechanical properties. The samples with dielectric fractured were scanned using a high-resolution X-ray computed tomography system to observe the fracture formation associated with mineral constituents. The fracture patterns of the rock samples were analyzed using numerical simulation for high-voltage pulse-induced fragmentation that adopts the surface traction and internal body force conditions.

  11. High voltage design guide. Volume 4: Aircraft

    NASA Astrophysics Data System (ADS)

    Dunbar, W. G.

    1983-01-01

    This report supplies the theoretical background and design techniques needed by an engineer who is designing electrical insulation for high-voltage, high-power components, equipment, and systems for aircraft. A literature survey and abundant bibliography identify references that provide further data on the subjects of partial discharges, corona, field theory and plotting, voids and processes for applying insulation. Both gaseous and solid insulations are treated. Cryogenic and liquid design notes are included. Tests and test equipment for high voltage insulation and equipment are defined. Requirements of test plans and procedures for high-voltage, high-power equipment are identified and illustrated by examples. Suggestions for high-voltage specifications are provided. Very few of the Military and Government specifications deal with system voltages above 10kV, thus most aircraft high-voltage specifications will have to be derived from the power industry specifications and standards produced by ASTM, IEEE, and NEMA.

  12. Measurements of the volt-ampere characteristics and the breakdown voltages of direct-current helium and hydrogen discharges in microgaps

    SciTech Connect

    Klas, M.; Matejčik, Š.; Radjenović, B.; Radmilović-Radjenović, M.

    2014-10-15

    The discharge phenomena for micro meter gap sizes include many interesting problems from engineering and physical perspectives. In this paper, the authors deal with the experimental and theoretical results of the breakdown voltage and current-voltage characteristics of the direct-current helium and hydrogen discharges. The measurements were performed at a constant pressure of around one atmosphere, while varying the gap size between two parallel plane tungsten electrodes between 1 μm and 100 μm. From the measured breakdown voltage curves, the effective yields and the ionization coefficients were derived for both gases. Present data for the ionization coefficients correlate with the data obtained for the breakdown voltage curves measured for fixed 100 μm interelectrode separation. The current-voltage characteristics were plotted for the various gap sizes illustrating the role of the field emission effects in the microgaps. Based on the Fowler-Nordheim theory, the enhancement factors were determined. The gap spacing dependence of the field emission current can be explained by the introduction of two ideas, the first being a space charge effect by emitted electrons, and the second a change in the breakdown mechanism. Experimental results, presented here, demonstrate that Townsend phenomenology breaks down when field emission becomes the key mechanism affecting the breakdown and deforming the left hand side of the breakdown voltage curves.

  13. Cryogenic CMOS cameras for high voltage monitoring in liquid argon

    NASA Astrophysics Data System (ADS)

    McConkey, N.; Spooner, N.; Thiesse, M.; Wallbank, M.; Warburton, T. K.

    2017-03-01

    The prevalent use of large volume liquid argon detectors strongly motivates the development of novel readout and monitoring technology which functions at cryogenic temperatures. This paper presents the development of a cryogenic CMOS camera system suitable for use inside a large volume liquid argon detector for online monitoring purposes. The characterisation of the system is described in detail. The reliability of such a camera system has been demonstrated over several months, and recent data from operation within the liquid argon region of the DUNE 35 t cryostat is presented. The cameras were used to monitor for high voltage breakdown inside the cryostat, with capability to observe breakdown of a liquid argon time projection chamber in situ. They were also used for detector monitoring, especially of components during cooldown.

  14. A new high-voltage interconnection shielding method for SOI monolithic ICs

    NASA Astrophysics Data System (ADS)

    Zhang, Long; Zhu, Jing; Sun, Weifeng; Huang, Xuequan; Zhao, Minna; Chen, Jiajun; Shi, Longxing; Chen, Jian; Ding, Desheng

    2017-07-01

    The high-voltage interconnection (HVI) issue becomes severe in the high-voltage monolithic ICs when single-layer metal is used for lowering the cost. This paper proposes a dual deep-oxide trenches (DDOT) structure for 500 V Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor (SOI-LIGBT) to shield the influence of HVI on the breakdown voltage. Compared with the conventional DDOT structure, HVI region of the proposed DDOT structure is shrunk by employing a shallow trench (T1) and a deep trench (T2). Besides the breakdown mechanism in the off-state, the current density and impact ionization rate distributions in the on-state of the proposed structure are also investigated. The experiments demonstrate that the proposed DDOT structure can fully shield the influence of HVI with significant reduction in the area of silicon region beneath the HVI. With almost the same off-state breakdown voltage (BVoff) of 550 V as the conventional DDOT structure, the length of the silicon region under the HVI in the proposed structure is shortened from 45 μm to 15 μm. Meanwhile, no on-state breakdown voltage (BVon) degradation is observed according to the measured results. The new method proposed in this work can also be used for other types of high-voltage devices such as LDMOS and free-wheeling diode in SOI Monolithic ICs.

  15. Design and experiment of 4H-SiC JBS diodes achieving a near-theoretical breakdown voltage with non-uniform floating limiting rings terminal

    NASA Astrophysics Data System (ADS)

    Yuan, Hao; Song, Qingwen; Tang, Xiaoyan; Zhang, Yimeng; Zhang, Yimen; Zhang, Yuming

    2016-09-01

    In this paper, a 4H-SiC Junction Barrier Schottky diode (JBS) with non-uniform floating limiting rings (FLRs) has been investigated and fabricated using n type 4H-SiC epitaxial layer with thickness of 31 μm and doping concentration of 3.3 × 1015 cm-3. According to the simulated results, the key parameters of a FLRs design to achieve a high voltage are the minimum space between two adjacent doped rings, spacing growth step and number of rings. The experimental results also show a great agreement with simulated results. Meanwhile, a near-ideal breakdown voltage of 3.7 kV was achieved, which yield around 95% of the parallel-plane breakdown voltage. The forward characteristics show that the fabricated JBS diodes have a forward current density of 210 A/cm2 at 3 V and a specific on-resistance (Rsp-on) of 7.58 mΩ cm2. Different FLRs parameters have no effect on the forward device performance.

  16. HIGH VOLTAGE, HIGH CURRENT SPARK GAP SWITCH

    DOEpatents

    Dike, R.S.; Lier, D.W.; Schofield, A.E.; Tuck, J.L.

    1962-04-17

    A high voltage and current spark gap switch comprising two main electrodes insulatingly supported in opposed spaced relationship and a middle electrode supported medially between the main electrodes and symmetrically about the median line of the main electrodes is described. The middle electrode has a perforation aligned with the median line and an irradiation electrode insulatingly supported in the body of the middle electrode normal to the median line and protruding into the perforation. (AEC)

  17. Investigation of problems associated with solid encapsulation of high voltage electronic assemblies; also Reynolds connector study

    NASA Technical Reports Server (NTRS)

    Bever, R. S.

    1975-01-01

    Electric breakdown prevention in vacuum and encapsulation of high voltage electronic circuits was studied. The lap shear method was used to measure adhesive strengths. The permeation constants of air at ambient room temperature through four different space-grade encapsulants was measured. Order of magnitude was calculated for the time that air bubble pressures drop to the corona region. High voltage connectors with L-type cable attached were tested in a vacuum system at various pressures. The cable system was shown to suppress catastrophic breakdown when filled with and surrounded by gas in the corona region of pressures, but did not prove to be completely noise free.

  18. Al00.3Ga0.7N PN diode with breakdown voltage >1600 V

    SciTech Connect

    Allerman, A. A.; Armstrong, A. M.; Fischer, A. J.; Dickerson, J. R.; Crawford, M. H.; King, M. P.; Moseley, M. W.; Wierer, J. J.; Kaplar, R. J.

    2016-07-21

    Demonstration of Al00.3Ga0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm2 was achieved under DC forward bias and a reverse leakage current <3 nA was measured for voltages <1200 V. The differential on-resistance of 16 mΩ cm2 is limited by the lateral conductivity of the n-type contact layer required by the front-surface contact geometry of the device. An effective critical electric field of 5.9 MV/cm was determined from the epilayer properties and the reverse current–voltage characteristics. To our knowledge, this is the first aluminium gallium nitride (AlGaN)-based PN diode exhibiting a breakdown voltage in excess of 1 kV. Finally, we note that a Baliga figure of merit (Vbr2/Rspec,on) of 150 MW/cm2 found is the highest reported for an AlGaN PN diode and illustrates the potential of larger-bandgap AlGaN alloys for high-voltage devices.

  19. Al00.3Ga0.7N PN diode with breakdown voltage >1600 V

    SciTech Connect

    Allerman, A. A.; Armstrong, A. M.; Fischer, A. J.; Dickerson, J. R.; Crawford, M. H.; King, M. P.; Moseley, M. W.; Wierer, J. J.; Kaplar, R. J.

    2016-07-21

    Demonstration of Al00.3Ga0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm2 was achieved under DC forward bias and a reverse leakage current <3 nA was measured for voltages <1200 V. The differential on-resistance of 16 mΩ cm2 is limited by the lateral conductivity of the n-type contact layer required by the front-surface contact geometry of the device. An effective critical electric field of 5.9 MV/cm was determined from the epilayer properties and the reverse current–voltage characteristics. To our knowledge, this is the first aluminium gallium nitride (AlGaN)-based PN diode exhibiting a breakdown voltage in excess of 1 kV. Finally, we note that a Baliga figure of merit (Vbr2/Rspec,on) of 150 MW/cm2 found is the highest reported for an AlGaN PN diode and illustrates the potential of larger-bandgap AlGaN alloys for high-voltage devices.

  20. Understanding and Improving High Voltage Vacuum Insulators for Microsecond Pulses

    SciTech Connect

    Javedani, J B; Goerz, D A; Houck, T L; Lauer, E J; Speer, R D; Tully, L K; Vogtlin, G E; White, A D

    2007-03-05

    High voltage insulation is one of the main areas of pulsed power research and development, and dielectric breakdown is usually the limiting factor in attaining the highest possible performance in pulsed power devices. For many applications the delivery of pulsed power into a vacuum region is the most critical aspect of operation. The surface of an insulator exposed to vacuum can fail electrically at an applied field more than an order or magnitude below the bulk dielectric strength of the insulator. This mode of breakdown, called surface flashover, imposes serious limitations on the power flow into a vacuum region. This is especially troublesome for applications where high voltage conditioning of the insulator and electrodes is not practical and for applications where relatively long pulses, on the order of several microseconds, are required. The goal of this project is to establish a sound fundamental understanding of the mechanisms that lead to surface flashover, and then evaluate the most promising techniques to improve vacuum insulators and enable high voltage operation at stress levels near the intrinsic bulk breakdown limits of the material. The approach we proposed and followed was to develop this understanding through a combination of theoretical and computation methods coupled with experiments to validate and quantify expected behaviors. In this report we summarize our modeling and simulation efforts, theoretical studies, and experimental investigations. The computational work began by exploring the limits of commercially available codes and demonstrating methods to examine field enhancements and defect mechanisms at microscopic levels. Plasma simulations with particle codes used in conjunction with circuit models of the experimental apparatus enabled comparisons with experimental measurements. The large scale plasma (LSP) particle-in-cell (PIC) code was run on multiprocessor platforms and used to simulate expanding plasma conditions in vacuum gap regions

  1. Numerical modeling of high power breakdown in metamaterials

    NASA Astrophysics Data System (ADS)

    Kourtzanidis, Konstantinos; Pederson, Dylan; Raja, Laxminarayan

    2016-09-01

    Metamaterials consist of sub-wavelength structural inclusions layered in a periodic fashion, which provide an effective response to electromagnetic (EM) radiation. The electric or magnetic responses of these materials are based on the resonant nature of their constitutive micro-structures. Under high power EM radiation, these resonances can result in the production of high amplitude currents and field amplification. Depending on the background gas and supporting pressure, breakdown can occur. The formation of plasma can strongly modify the EM response of the metamaterial and thus a detailed study on the breakdown threshold, plasma localization and EM response modification is necessary. Here, we present three-dimensional numerical simulations of high power - high frequency air breakdown in metamaterials. We use a self-consistent fluid description of the plasma formation and dynamics coupled with Maxwell's equations via the electron momentum equation. We study two typical (for metamaterials) micro-structures: The Split Ring Resonator and the Cut Wire pairs. Breakdown threshold is identified for both configurations. Calculations of transmittance and retrieval of the metamaterials' effective parameters help us quantify the effect of plasma formation on the EM response of these metamaterials.

  2. High-Voltage CMOS Controller for Microfluidics.

    PubMed

    Khorasani, M; Behnam, M; van den Berg, L; Backhouse, C J; Elliott, D G

    2009-04-01

    A high-voltage microfluidic controller designed using DALSA semiconductor's 0.8-mum low-voltage/high-voltage complementary metal-oxide semiconductor/double diffused metal-oxide semiconductor process is presented. The chip's four high-voltage output drivers can switch 300 V, and the dc-dc boost converter can generate up to 68 V using external passive components. This integrated circuit represents an advancement in microfluidic technology when used in conjunction with a charge coupling device (CCD)-based optical system and a glass microfluidic channel, enabling a portable and cost-efficient platform for genetic analysis.

  3. A novel partial SOI LDMOSFET with periodic buried oxide for breakdown voltage and self heating effect enhancement

    NASA Astrophysics Data System (ADS)

    Jamali Mahabadi, S. E.; Rajabi, Saba; Loiacono, Julian

    2015-09-01

    In this paper a partial silicon on insulator (PSOI) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) with periodic buried oxide layer (PBO) for enhancing breakdown voltage (BV) and self-heating effects (SHEs) is proposed for the first time. This new structure is called periodic buried oxide partial silicon on insulator (PBO-PSOI). In this structure, periodic small pieces of SiO2 were used as the buried oxide (BOX) layer in PSOI to modulate the electric field in the structure. It was demonstrated that the electric field is distributed more evenly by producing additional electric field peaks, which decrease the common peaks near the drain and gate junctions in the PBO-PSOI structure. Hence, the area underneath the electric field curve increases which leads to higher breakdown voltage. Also a p-type Si window was introduced in the source side to force the substrate to share the vertical voltage drop, leading to a higher vertical BV. Furthermore, the Si window under the source and those between periodic pieces of SiO2 create parallel conduction paths between the active layer and substrate thereby alleviating the SHEs. Simulations with the two dimensional ATLAS device simulator from the Silvaco suite of simulation tools show that the BV of PBO-PSOI is 100% higher than that of the conventional partial SOI (C-PSOI) structure. Furthermore the PBO-PSOI structure alleviates SHEs to a greater extent than its C-PSOI counterpart. The achieved drain current for the PBO-PSOI structure (100 μA), at drain-source voltage of VDS = 100 V and gate-source voltage of VGS = 25 V, is shown to be significantly larger than that in C-PSOI and fully depleted SOI (FD-SOI) structures (87 μA and 51 μA respectively). Drain current can be further improved at the expense of BV by increasing the doping of the drift region.

  4. Note: Complementary metal-oxide-semiconductor high voltage pulse generation circuits

    NASA Astrophysics Data System (ADS)

    Sun, Jiwei; Wang, Pingshan

    2013-10-01

    We present two types of on-chip pulse generation circuits. The first is based on CMOS pulse-forming-lines (PFLs). It includes a four-stage charge pump, a four-stacked-MOSFET switch and a 5 mm long PFL. The circuit is implemented in a 0.13 μm CMOS process. Pulses of ˜1.8 V amplitude with ˜135 ps duration on a 50 Ω load are obtained. The obtained voltage is higher than 1.6 V, the rated operating voltage of the process. The second is a high-voltage Marx generator which also uses stacked MOSFETs as high voltage switches. The output voltage is 11.68 V, which is higher than the highest breakdown voltage (˜10 V) of the CMOS process. These results significantly extend high-voltage pulse generation capabilities of CMOS technologies.

  5. Note: Complementary metal-oxide-semiconductor high voltage pulse generation circuits.

    PubMed

    Sun, Jiwei; Wang, Pingshan

    2013-10-01

    We present two types of on-chip pulse generation circuits. The first is based on CMOS pulse-forming-lines (PFLs). It includes a four-stage charge pump, a four-stacked-MOSFET switch and a 5 mm long PFL. The circuit is implemented in a 0.13 μm CMOS process. Pulses of ~1.8 V amplitude with ~135 ps duration on a 50 Ω load are obtained. The obtained voltage is higher than 1.6 V, the rated operating voltage of the process. The second is a high-voltage Marx generator which also uses stacked MOSFETs as high voltage switches. The output voltage is 11.68 V, which is higher than the highest breakdown voltage (~10 V) of the CMOS process. These results significantly extend high-voltage pulse generation capabilities of CMOS technologies.

  6. Ultra-compact Marx-type high-voltage generator

    DOEpatents

    Goerz, David A.; Wilson, Michael J.

    2000-01-01

    An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

  7. High voltage MOSFET switching circuit

    DOEpatents

    McEwan, Thomas E.

    1994-01-01

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

  8. High voltage MOSFET switching circuit

    DOEpatents

    McEwan, T.E.

    1994-07-26

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.

  9. High voltage REBULF LDMOS with N + buried layer

    NASA Astrophysics Data System (ADS)

    Duan, Baoxing; Yang, Yintang; Zhang, Bo

    2010-07-01

    A novel concept of REBULF (REduced BULk Field) is proposed for the developing smart power integrated circuit with the thin epitaxy layer. The REBULF LDMOS structure is designed with N + buried layer embedded in the high-resistance substrate. The mechanism of breakdown of the new device is that the high electric field around the drain is reduced by N + buried layer, which causes the redistribution of the bulk electric field in the drift region of the REBULF LDMOS so that the substrate supports more biases. The critical condition of the REBULF technology is analyzed and validated by 2-D MEDICI simulation results, which is the product of the location of N + buried layer and substrate's doping is not more than 1 × 1012 cm -2. The breakdown voltage of REBULF LDMOS is increased by 75% in comparison to the conventional RESURF LDMOS from the simulation results. The experimental results show the high electric field around the drain is reduced as the depletion region spreads to N + buried layer. Although the leakage has increased a little, this increase is not enough to cause the avalanche breakdown.

  10. A Test Study of 50% Lightning Impulse Breakdown Voltage on Rod-Plane Gap with Two-Phase Mixture of Gas and Solid Particles

    NASA Astrophysics Data System (ADS)

    He, Zhenghao; Xu, Huaili; Bai, Jing; Yu, Fusheng; Hu, Feng; Li, Jin

    2007-12-01

    A test study on 50% lightning impulse breakdown voltage in two-phase mixture of gas and solid particles has been carried out in a specially designed discharge cabinet. A mechanical sieve is set up for sifting different solid particles into the discharge space uniformly. The lightning impulse voltage according with international electro-technical commission (IEC) standard is applied to the electrodes inside the discharge cabinet by the rule of up-down method in a total of 40 times. The results showed that the 50% lightning impulse breakdown voltage in two-phase mixture of gas and solid particles has its own features and is much different from that in air.

  11. Multijunction high-voltage solar cell

    NASA Technical Reports Server (NTRS)

    Evans, J. C., Jr.; Goradia, C.; Chai, A. T.

    1981-01-01

    Multijunction cell allows for fabrication of high-voltage solar cell on single semiconductor wafer. Photovoltaic energy source using cell is combined on wafer with circuit it is to power. Cell consists of many voltage-generating regions internally or externally interconnected to give desired voltage and current combination. For computer applications, module is built on silicon wafer with energy for internal information processing and readouts derived from external light source.

  12. Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown

    SciTech Connect

    Kuzmik, J. Jurkovič, M.; Gregušová, D.; Ťapajna, M.; Brunner, F.; Cho, M.; Würfl, J.; Meneghesso, G.

    2014-04-28

    We investigate degradation mechanisms in AlGaN/GaN HEMTs which were repeatedly driven into the current-controlled off-state breakdown or subject to 60 s voltage- or current-controlled off state stresses. The current-controlled sweep in to the breakdown allows the sustainability of breakdown that can not be observed in the voltage controlled sweep. Only temporal changes were observed in the HEMT dc performance after repetitive sweeps, which were explained by charging/discharging of the HEMT surface at the gate-to-drain access region and in the GaN buffer below the gate. Similar changes were observed also if high-voltage stress has been applied on the drain; however, permanent degradation appears after 60 s current-controlled breakdown stress. In this case, the drain leakage current, as well as the breakdown current, increases significantly. On the other hand, the breakdown voltage, as well as the gate characteristics, remains unaltered. We suggest that the avalanche-injection process is governing the off-state breakdown event with a dominant role of the potential barrier at the channel-buffer interface.

  13. High Voltage Tests in the LUX-ZEPLIN System Test

    NASA Astrophysics Data System (ADS)

    Whitis, Thomas; Lux-Zeplin Collaboration

    2016-03-01

    The LUX-ZEPLIN (LZ) project is a dark matter direct detection experiment using liquid xenon. The detector is a time projection chamber (TPC) requiring the establishment of a large electric field inside of the detector in order to drift ionization electrons. Historically, many xenon TPC designs have been unable to reach their design fields due to light production and breakdown. The LZ System Test is scaled so that with a cathode voltage of -50 kV, it will have the fields that will be seen in the LZ detector at -100 kV. It will use a fully instrumented but scaled-down version of the LZ TPC design with a vessel set and gas system designed for quick turnaround, allowing for iterative modifications to the TPC prototype and instrumentation. This talk will present results from the high voltage tests performed during the first runs of the LZ System Test.

  14. Simplified modeling of pulsed corona for dielectric design of high-voltage devices

    NASA Astrophysics Data System (ADS)

    Pancheshnyi, Sergey; Schefer, Thomas

    2016-09-01

    Physics-based modeling of discharges in insulating gases (air, SF6, CO2 , etc.) is required for quantitative prediction of withstand voltages of high-voltage devices. Breakdown of not very long gaps at elevated pressures occurs typically by streamer (or spark) mechanism. Glow or streamer corona can delay the inception of breakdown streamers. This is often attributed to the so-called corona stabilization effect that is lowering of electric field close to the stressed electrodes due to corona space charge. However, compared to corona-less streamer breakdown of short gaps at elevated pressures, breakdown voltages are typically lower if corona starts. Direct simulation of discharges are often computationally costly, especially for 3D cases, and simplified engineering approaches are developing. Such models are then used for prediction of the ``worst-case scenario'', which might lead to breakdown of gaseous insulation in real design. The engineering models used for simulation of corona inception and development for different voltage shapes (DC, AC, pulsed) will be discussed for several geometries, including rod-plane case and electrode-less inception near a dielectric surface.

  15. High Voltage Pulse Testing Survey.

    DTIC Science & Technology

    1985-10-01

    Vacuum 18 I. Direct Current Source 18 2. Pulse 20 3. Insulator Flashover 20 (a) Alumina 20 (b) Organic Materials 23 D...withstand voltage. 3. Insulator Flashover Flashover along insulating surfaces is less than it is along a parallel plate vacuum gap of similar dimensions...K. D. Srivastova, "The Effects of DC Prestress on Impulse Flashover of Insulators in Vacuum ," IEEE Trans on Elec Ins, Vol. EI-9, No. 3, pp.

  16. High-voltage field-controlled integrated thyristor

    NASA Astrophysics Data System (ADS)

    Grekhov, I. V.; Rozhkov, A. V.; Kostina, L. S.; Konovalov, A. V.; Fomenko, Yu. L.

    2013-01-01

    The design and technology of powerful field-controlled integrated thyristors, new energy-saving devices intended for converter equipment, are considered. The turn-on and turn-off current and voltage waveforms of the n+ p' N- n' p + microthyristor chip are presented, and turn-on and turn-off mechanisms are discussed. The development of local dynamic breakdown at turn-off is experimentally studied. The respective waveforms for this process are given, and the type of breakdown at a current density of about 150 A/cm2 is demonstrated. The current-voltage characteristics in the on state at room temperature and at 125°C indicate the temperature dependence changes sign at a current density above 60 A/cm2, becoming positive. This is significant for parallel operation of microthyristor chips in a module. It is shown that the static and dynamic characteristics of simple-in-design field-controlled integrated thyristors are highly competitive with those of insulated-gate bipolar transistors-basic devices of advanced high-power converter equipment.

  17. High voltage 4H-silicon carbide ACCUFETs

    NASA Astrophysics Data System (ADS)

    Chilukuri, Ravi Kiran

    2000-10-01

    Silicon carbide (SiC) is a promising material for high voltage, high frequency and high temperature semiconductor devices. The commercial availability of 6H- and 4H-SiC substrates, and the development of process technology for SiC, has led to demonstrations of a variety of SiC devices and circuits. In this research, a novel planar vertical MOSFET structure called the Accumulation Channel Field Effect Transistor (ACCUFET), which eliminates both the problems of premature oxide breakdown and low inversion layer mobility commonly found in SiC trench MOSFETs, is studied on 4H-SiC. An investigation of the poor performance of previously fabricated 4H-SiC ACCUFETs provided insights for changes in device design and process flow for improving the device performance. This insight was used for designing a new process run for the fabrication of improved high voltage 4H-SiC ACCUFETs. These new designs of ACCUFETs were successfully fabricated on starting material with different epilayer thickness and doping values, corresponding to breakdown voltages ranging from 2000 V to 7500 V. The forward conduction characteristics of different ACCUFET designs were studied. The device physics and the operation of the planar ACCUFET are discussed in detail, and the effects of key device design parameters on device characteristics are described with the aid of two-dimensional simulations. The contributions of the parasitic JFET regions (a surface JFET and a buried JFET) in the ACCUFET to its forward conduction and forward blocking characteristics are discussed in depth for the first time. ACCUFET structures designed for studying and for eliminating the problems due to the parasitic JFET regions are explained. It is demonstrated that in the high voltage ACCUFETs in which the epilayer doping is low, the buried JFET can be completely pinched off, resulting in a drain offset voltage in the current-voltage characteristics, which can be explained by the triodelike behavior of the buried JFET. The

  18. Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (less than 250 V) 4H-SiC p(+)n Junction diodes. Part 1; DC Properties

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Huang, Wei; Dudley, Michael

    1998-01-01

    Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = 1c with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4)/sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

  19. Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC p+n Junction Diodes - Part 1: DC Properties

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Huang, Wei; Dudley, Michael

    1999-01-01

    Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = lc with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4) sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

  20. Ultrasonic evaluation of high voltage circuit boards

    NASA Technical Reports Server (NTRS)

    Klima, S. J.; Riley, T. J.

    1976-01-01

    Preliminary observations indicate that an ultrasonic scanning technique may be useful as a quick, low cost, nondestructive method for judging the quality of circuit board materials for high voltage applications. Corona inception voltage tests were conducted on fiberglass-epoxy and fiberglass-polyimide high pressure laminates from 20 to 140 C. The same materials were scanned ultrasonically by utilizing the single transducer, through-transmission technique with reflector plate, and recording variations in ultrasonic energy transmitted through the board thickness. A direct relationship was observed between ultrasonic transmission level and corona inception voltage. The ultrasonic technique was subsequently used to aid selection of high quality circuit boards for the Communications Technology Satellite.

  1. High-voltage 4H-SiC trench MOS barrier Schottky rectifier with low forward voltage drop using enhanced sidewall layer

    NASA Astrophysics Data System (ADS)

    Cho, Doohyung; Sim, Seulgi; Park, Kunsik; Won, Jongil; Kim, Sanggi; Kim, Kwangsoo

    2015-12-01

    In this paper, a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier with an enhanced sidewall layer (ESL) is proposed. The proposed structure has a high doping concentration at the trench sidewall. This high doping concentration improves both the reverse blocking and forward characteristics of the structure. The ESL-TMBS rectifier has a 7.4% lower forward voltage drop and a 24% higher breakdown voltage. However, this structure has a reverse leakage current that is approximately three times higher than that of a conventional TMBS rectifier owing to the reduction in energy barrier height. This problem is solved when ESL is used partially, since its use provides a reverse leakage current that is comparable to that of a conventional TMBS rectifier. Thus, the forward voltage drop and breakdown voltage improve without any loss in static and dynamic characteristics in the ESL-TMBS rectifier compared with the performance of a conventional TMBS rectifier.

  2. Subnanosecond processes in the stage of breakdown formation in gas at a high pressure

    NASA Astrophysics Data System (ADS)

    Korolev, Yu. D.; Bykov, N. M.; Ivanov, S. N.

    2008-12-01

    Results are presented from experimental studies of the prebreakdown stage of a discharge in nitrogen at pressures of a few tens of atmospheres, gap voltages higher than 140 kV, and a voltage rise time of about 1 ns. Breakdown occurs at the front of the voltage pulse; i.e., the time of breakdown formation is shorter than the front duration. It is shown that, in gaps with a nonuniform electric field, the breakdown formation time is mainly determined by the time of avalanche development to the critical number of charge carriers. The subsequent stages of breakdown (the development of the ionization wave and the buildup of the conductivity in the weakly conducting channel bridging the gap) turn out to be shorter than this time or comparable to it.

  3. Experimental studies on the power-frequency breakdown voltage of CF3I/N2/CO2 gas mixture

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoxing; Tian, Shuangshuang; Xiao, Song; Li, Yi; Deng, Zaitao; Tang, Ju

    2017-03-01

    Trifluoroiodomethane is a promising alternative to SF6 because of its good insulation properties and much less serious greenhouse effect than SF6. Previous studies have shown that the insulation performance of CF3I mixed with CO2 or N2 can equal that of SF6. This study explored the frequency breakdown characteristics of CF3I and SF6 mixed with two buffer gases. The effects of air pressure and field strength were analyzed. The fixed mixing ratio of CF3I and SF6 was 30% in the experiment. The breakdown experiment was conducted by changing the mixing ratio of CO2 and N2. Results showed that the CO2/N2 mixture ratio did not exert a synergetic effect, and the CF3I/CO2 breakdown performance was better than that of CF3I/N2 in the quasi-uniform and highly non-uniform electric fields. CO2 possibly provided the C atoms for the entire system to maintain a certain balance in C, and this balance inhibited the decomposition of CF3I. The breakdown performance of SF6/N2 was good in quasi-uniform field, whereas that of SF6/CO2 was good in the highly non-uniform field.

  4. High-voltage-compatible, fully depleted CCDs

    SciTech Connect

    Holland, Stephen E.; Bebek, Chris J.; Dawson, Kyle S.; Emes, JohnE.; Fabricius, Max H.; Fairfield, Jessaym A.; Groom, Don E.; Karcher, A.; Kolbe, William F.; Palaio, Nick P.; Roe, Natalie A.; Wang, Guobin

    2006-05-15

    We describe charge-coupled device (CCD) developmentactivities at the Lawrence Berkeley National Laboratory (LBNL).Back-illuminated CCDs fabricated on 200-300 mu m thick, fully depleted,high-resistivity silicon substrates are produced in partnership with acommercial CCD foundry.The CCDs are fully depleted by the application ofa substrate bias voltage. Spatial resolution considerations requireoperation of thick, fully depleted CCDs at high substrate bias voltages.We have developed CCDs that are compatible with substrate bias voltagesof at least 200V. This improves spatial resolution for a given thickness,and allows for full depletion of thicker CCDs than previously considered.We have demonstrated full depletion of 650-675 mu m thick CCDs, withpotential applications in direct x-ray detection. In this work we discussthe issues related to high-voltage operation of fully depleted CCDs, aswell as experimental results on high-voltage-compatible CCDs.

  5. Spacecraft high-voltage power supply construction

    NASA Technical Reports Server (NTRS)

    Sutton, J. F.; Stern, J. E.

    1975-01-01

    The design techniques, circuit components, fabrication techniques, and past experience used in successful high-voltage power supplies for spacecraft flight systems are described. A discussion of the basic physics of electrical discharges in gases is included and a design rationale for the prevention of electrical discharges is provided. Also included are typical examples of proven spacecraft high-voltage power supplies with typical specifications for design, fabrication, and testing.

  6. Detecting Faults In High-Voltage Transformers

    NASA Technical Reports Server (NTRS)

    Blow, Raymond K.

    1988-01-01

    Simple fixture quickly shows whether high-voltage transformer has excessive voids in dielectric materials and whether high-voltage lead wires too close to transformer case. Fixture is "go/no-go" indicator; corona appears if transformer contains such faults. Nests in wire mesh supported by cap of clear epoxy. If transformer has defects, blue glow of corona appears in mesh and is seen through cap.

  7. Detecting Faults In High-Voltage Transformers

    NASA Technical Reports Server (NTRS)

    Blow, Raymond K.

    1988-01-01

    Simple fixture quickly shows whether high-voltage transformer has excessive voids in dielectric materials and whether high-voltage lead wires too close to transformer case. Fixture is "go/no-go" indicator; corona appears if transformer contains such faults. Nests in wire mesh supported by cap of clear epoxy. If transformer has defects, blue glow of corona appears in mesh and is seen through cap.

  8. Boeing's High Voltage Solar Tile Test Results

    NASA Technical Reports Server (NTRS)

    Reed, Brian J.; Harden, David E.; Ferguson, Dale C.; Snyder, David B.

    2002-01-01

    Real concerns of spacecraft charging and experience with solar array augmented electrostatic discharge arcs on spacecraft have minimized the use of high voltages on large solar arrays despite numerous vehicle system mass and efficiency advantages. Boeing's solar tile (patent pending) allows high voltage to be generated at the array without the mass and efficiency losses of electronic conversion. Direct drive electric propulsion and higher power payloads (lower spacecraft weight) will benefit from this design. As future power demand grows, spacecraft designers must use higher voltage to minimize transmission loss and power cable mass for very large area arrays. This paper will describe the design and discuss the successful test of Boeing's 500-Volt Solar Tile in NASA Glenn's Tenney chamber in the Space Plasma Interaction Facility. The work was sponsored by NASA's Space Solar Power Exploratory Research and Technology (SERT) Program and will result in updated high voltage solar array design guidelines being published.

  9. 30 CFR 75.826 - High-voltage trailing cables.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables. 75.826 Section 75... HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution High-Voltage Longwalls § 75.826 High-voltage trailing cables. High-voltage trailing cables must: (a)...

  10. Efficient circuit triggers high-current, high-voltage pulses

    NASA Technical Reports Server (NTRS)

    Green, E. D.

    1964-01-01

    Modified circuit uses diodes to effectively disconnect the charging resistors from the circuit during the discharge cycle. Result is an efficient parallel charging, high voltage pulse modulator with low voltage rating of components.

  11. High voltage planar multijunction solar cell

    NASA Technical Reports Server (NTRS)

    Evans, J. C., Jr.; Chai, A. T.; Goradia, C. P. (Inventor)

    1982-01-01

    A high voltage multijunction solar cell is provided wherein a plurality of discrete voltage generating regions or unit cells are formed in a single generally planar semiconductor body. The unit cells are comprised of doped regions of opposite conductivity type separated by a gap or undiffused region. Metal contacts connect adjacent cells together in series so that the output voltages of the individual cells are additive. In some embodiments, doped field regions separated by a overlie the unit cells but the cells may be formed in both faces of the wafer.

  12. An LOD with improved breakdown voltage in full-frame CCD devices

    NASA Astrophysics Data System (ADS)

    Banghart, Edmund K.; Stevens, Eric G.; Doan, Hung Q.; Shepherd, John P.; Meisenzahl, Eric J.

    2005-02-01

    In full-frame image sensors, lateral overflow drain (LOD) structures are typically formed along the vertical CCD shift registers to provide a means for preventing charge blooming in the imager pixels. In a conventional LOD structure, the n-type LOD implant is made through the thin gate dielectric stack in the device active area and adjacent to the thick field oxidation that isolates the vertical CCD columns of the imager. In this paper, a novel LOD structure is described in which the n-type LOD impurities are placed directly under the field oxidation and are, therefore, electrically isolated from the gate electrodes. By reducing the electrical fields that cause breakdown at the silicon surface, this new structure permits a larger amount of n-type impurities to be implanted for the purpose of increasing the LOD conductivity. As a consequence of the improved conductance, the LOD width can be significantly reduced, enabling the design of higher resolution imaging arrays without sacrificing charge capacity in the pixels. Numerical simulations with MEDICI of the LOD leakage current are presented that identify the breakdown mechanism, while three-dimensional solutions to Poisson's equation are used to determine the charge capacity as a function of pixel dimension.

  13. Study of a High Voltage Ion Engine Power Supply

    NASA Technical Reports Server (NTRS)

    Stuart, Thomas A.; King, Roger J.; Mayer, Eric

    1996-01-01

    A complete laboratory breadboard version of a ion engine power converter was built and tested. This prototype operated on a line voltage of 80-120 Vdc, and provided output ratings of 1100 V at 1.8 kW, and 250 V at 20 mA. The high-voltage (HV) output voltage rating was revised from the original value of 1350 V at the beginning of the project. The LV output was designed to hold up during a 1-A surge current lasting up to 1 second. The prototype power converter included a internal housekeeping power supply which also operated from the line input. The power consumed in housekeeping was included in the overall energy budget presented for the ion engine converter. HV and LV output voltage setpoints were commanded through potentiometers. The HV converter itself reached its highest power efficiency of slightly over 93% at low line and maximum output. This would dip below 90% at high line. The no-load (rated output voltages, zero load current) power consumption of the entire system was less than 13 W. A careful loss breakdown shows that converter losses are predominately Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) conduction losses and HV rectifier snubbing losses, with the rectifier snubbing losses becoming predominant at high line. This suggests that further improvements in power efficiency could best be obtained by either developing a rectifier that was adequately protected against voltage overshoot with less snubbing, or by developing a pre-regulator to reduced the range of line voltage on the converter. The transient testing showed the converter to be fully protected against load faults, including a direct short-circuit from the HV output to the LV output terminals. Two currents sensors were used: one to directly detect any core ratcheting on the output transformer and re-initiate a soft start, and the other to directly detect a load fault and quickly shut down the converter for load protection. The finished converter has been extensively fault tested

  14. 30 CFR 75.826 - High-voltage trailing cables.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage trailing cables. 75.826 Section 75...-Voltage Longwalls § 75.826 High-voltage trailing cables. High-voltage trailing cables must: (a) Meet existing trailing cable requirements and the approval requirements of the high-voltage continuous mining...

  15. 30 CFR 75.826 - High-voltage trailing cables.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false High-voltage trailing cables. 75.826 Section 75...-Voltage Longwalls § 75.826 High-voltage trailing cables. High-voltage trailing cables must: (a) Meet existing trailing cable requirements and the approval requirements of the high-voltage continuous mining...

  16. 30 CFR 75.826 - High-voltage trailing cables.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false High-voltage trailing cables. 75.826 Section 75...-Voltage Longwalls § 75.826 High-voltage trailing cables. High-voltage trailing cables must: (a) Meet existing trailing cable requirements and the approval requirements of the high-voltage continuous mining...

  17. 30 CFR 75.826 - High-voltage trailing cables.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 1 2014-07-01 2014-07-01 false High-voltage trailing cables. 75.826 Section 75...-Voltage Longwalls § 75.826 High-voltage trailing cables. High-voltage trailing cables must: (a) Meet existing trailing cable requirements and the approval requirements of the high-voltage continuous mining...

  18. Programmable high voltage power supply with regulation confined to the high voltage section

    NASA Technical Reports Server (NTRS)

    Castell, Karen D. (Inventor); Ruitberg, Arthur P. (Inventor)

    1994-01-01

    A high voltage power supply in a dc-dc converter configuration includes a pre-regulator which filters and regulates the dc input and drives an oscillator which applies, in turn, a low voltage ac signal to the low side of a step-up high voltage transformer. The high voltage side of the transformer drives a voltage multiplier which provides a stepped up dc voltage to an output filter. The output voltage is sensed by a feedback network which then controls a regulator. Both the input and output of the regulator are on the high voltage side, avoiding isolation problems. The regulator furnishes a portion of the drive to the voltage multiplier, avoiding having a regulator in series with the load with its attendant, relatively high power losses. This power supply is highly regulated, has low power consumption, a low parts count and may be manufactured at low cost. The power supply has a programmability feature that allows for the selection of a large range of output voltages.

  19. Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes

    NASA Astrophysics Data System (ADS)

    Vizkelethy, G.; King, M. P.; Aktas, O.; Kizilyalli, I. C.; Kaplar, R. J.

    2017-08-01

    Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories' nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. The displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.

  20. Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes

    DOE PAGES

    Vizkelethy, G.; King, M. P.; Aktas, O.; ...

    2016-12-02

    Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories’ nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. Here, the displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.

  1. On the difference between breakdown and quench voltages of argon plasma and its relation to 4p–4s atomic state transitions

    SciTech Connect

    Forati, Ebrahim Piltan, Shiva; Sievenpiper, Dan

    2015-02-02

    Using a relaxation oscillator circuit, breakdown (V{sub BD}) and quench (V{sub Q}) voltages of a DC discharge microplasma between two needle probes are measured. High resolution modified Paschen curves are obtained for argon microplasmas including a quench voltage curve representing the voltage at which the plasma turns off. It is shown that for a point to point microgap (e.g., the microgap between two needle probes) which describes many realistic microdevices, neither Paschen's law applies nor field emission is noticeable. Although normally V{sub BD} > V{sub Q,} it is observed that depending on environmental parameters of argon, such as pressure and the driving circuitry, plasma can exist in a different state with equal V{sub BD} and V{sub Q.} Using emission line spectroscopy, it is shown that V{sub BD} and V{sub Q} are equal if the atomic excitation by the electric field dipole moment dominantly leads to one of the argon's metastable states (4P{sub 5} in our study)

  2. Advanced Gate Drive for the SNS High Voltage Converter Modulator

    SciTech Connect

    Nguyen, M.N.; Burkhart, C.; Kemp, M.A.; Anderson, D.E.; /Oak Ridge

    2009-05-07

    SLAC National Accelerator Laboratory is developing a next generation H-bridge switch plate [1], a critical component of the SNS High Voltage Converter Modulator [2]. As part of that effort, a new IGBT gate driver has been developed. The drivers are an integral part of the switch plate, which are essential to ensuring fault-tolerant, high-performance operation of the modulator. The redesigned driver improves upon the existing gate drive in several ways. The new gate driver has improved fault detection and suppression capabilities; suppression of shoot-through and over-voltage conditions, monitoring of dI/dt and Vce(sat) for fast over-current detection and suppression, and redundant power isolation are some of the added features. In addition, triggering insertion delay is reduced by a factor of four compared to the existing driver. This paper details the design and performance of the new IGBT gate driver. A simplified schematic and description of the construction are included. The operation of the fast over-current detection circuits, active IGBT over-voltage protection circuit, shoot-through prevention circuitry, and control power isolation breakdown detection circuit are discussed.

  3. Statistics of electron avalanches and bursts in low pressure gases below the breakdown voltage

    SciTech Connect

    Donko, Z.

    1995-12-31

    Avalanches in different types of dynamical systems have been subject of recent interest. Avalanches building up in gases play an important role in radiation detectors and in the breakdown process of gas discharges. We have used computer simulation to study statistical properties of electron avalanches and bursts (sequences of avalanches) in a gas subjected to a homogeneous electric field. Helium was used as buffer gas, but we believe that our results are more general. The bursts were initiated by injecting low energy electrons into the gas. We applied Monte Carlo procedure to trace the trajectories of electrons. The elementary processes considered in the model were anisotropic elastic scattering of electrons from He atoms, electron impact excitation and ionization of He atoms. The electrons were traced until the are reached the perfectly absorbing anode.

  4. Electro-optic high voltage sensor

    DOEpatents

    Davidson, James R.; Seifert, Gary D.

    2003-09-16

    A small sized electro-optic voltage sensor capable of accurate measurement of high voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation. A polarization beam displacer separates the input beam into two beams with orthogonal linear polarizations and causes one linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels effect elliptically polarizes the beam as it travels through the crystal. A reflector redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization. The system may include a detector for converting the output beams into electrical signals and a signal processor for determining the voltage based on an analysis of the output beams.

  5. Dielectric recovery in a high-voltage circuit breaker in SF6

    NASA Astrophysics Data System (ADS)

    Seeger, M.; Schwinne, M.; Bini, R.; Mahdizadeh, N.; Votteler, T.

    2012-10-01

    The dielectric recovery in high-voltage circuit breakers after interruption of high-current amplitudes was investigated experimentally in a test device. Various current amplitudes were tested, which cover a typical range of practical interest. Simulations with computational fluid dynamics together with electric field simulations allowed one to deduce the physical parameters in the region where the breakdown was decided. A leader inception model using these parameters explains under which condition leader inception occurs; causing breakdown of the gap. Based on this model scaling laws for leader inception are given.

  6. High voltage testing for the Majorana Demonstrator

    SciTech Connect

    Abgrall, N.; Arnquist, Isaac J.; Avignone, F. T.; Barabash, A.; Bertrand, F.; Bradley, A. W.; Brudanin, V.; Busch, Matthew; Buuck, M.; Byram, D.; Caldwell, A. S.; Chan, Yuen-Dat; Christofferson, C. D.; Chu, Pamela M.; Cuesta, C.; Detwiler, Jason A.; Doe, P. J.; Dunagan, C.; Efremenko, Yuri; Ejiri, H.; Elliott, S. R.; Fu, Z.; Galindo-Uribarri, A.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I.; Guiseppe, V. E.; Henning, R.; Hoppe, Eric W.; Howard, S.; Howe, M. A.; Jasinski, B. R.; Keeter, K.; Kidd, M. F.; Konovalov, S.; Kouzes, Richard T.; Laferriere, Brian D.; Leon, Jonathan D.; Li, Alexander D.; MacMullin, J.; Martin, R. D.; Massarcyk, R.; Meijer, S. J.; Mertens, S.; Orrell, John L.; O'Shaughnessy, C.; Poon, Alan W.; Radford, D. C.; Rager, J.; Rielage, Keith; Robertson, R. G. H.; Romero Romo, M.; Shanks, B.; Shirchenko, M.; Snyder, N.; Suriano, Anne-Marie E.; Tedeschi, D.; Thompson, Andrew; Ton, K. T.; Trimble, J. E.; Varner, R. L.; Vasilyev, Sergey; Vetter, Kai; Vorren, Kris R.; White, Brandon R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, Chang-Hong; Yumatov, V.

    2016-07-01

    The Majorana Collaboration is constructing theMajorana Demonstrator, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of theMajorana Demonstrator. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of the high-voltage path, including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the Majorana Demonstrator was characterized and the micro-discharge effects during theMajorana Demonstrator commissioning phase were studied. A stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.

  7. High voltage testing for the MAJORANA DEMONSTRATOR

    NASA Astrophysics Data System (ADS)

    Abgrall, N.; Arnquist, I. J.; Avignone, F. T.; Barabash, A. S.; Bertrand, F. E.; Bradley, A. W.; Brudanin, V.; Busch, M.; Buuck, M.; Byram, D.; Caldwell, A. S.; Chan, Y.-D.; Christofferson, C. D.; Chu, P.-H.; Cuesta, C.; Detwiler, J. A.; Doe, P. J.; Dunagan, C.; Efremenko, Yu.; Ejiri, H.; Elliott, S. R.; Fu, Z.; Galindo-Uribarri, A.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Henning, R.; Hoppe, E. W.; Howard, S.; Howe, M. A.; Jasinski, B. R.; Keeter, K. J.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; Li, A.; MacMullin, J.; Martin, R. D.; Massarczyk, R.; Meijer, S. J.; Mertens, S.; Orrell, J. L.; O'Shaughnessy, C.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Rielage, K.; Robertson, R. G. H.; Romero-Romero, E.; Shanks, B.; Shirchenko, M.; Snyder, N.; Suriano, A. M.; Tedeschi, D.; Thompson, A.; Ton, K. T.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C.-H.; Yumatov, V.

    2016-07-01

    The MAJORANA Collaboration is constructing the MAJORANA DEMONSTRATOR, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of the MAJORANA DEMONSTRATOR. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of the high-voltage path, including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the MAJORANA DEMONSTRATOR was characterized and the micro-discharge effects during the MAJORANA DEMONSTRATOR commissioning phase were studied. A stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.

  8. High voltage testing for the Majorana Demonstrator

    DOE PAGES

    Abgrall, N.; Arnquist, I. J.; Avignone, III, F. T.; ...

    2016-04-04

    The Majorana Collaboration is constructing the Majorana Demonstrator, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of the Majorana Demonstrator. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of themore » high-voltage path, including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the Majorana Demonstrator was characterized and the micro-discharge effects during the Majorana Demonstrator commissioning phase were studied. Furthermore, a stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.« less

  9. High voltage testing for the Majorana Demonstrator

    SciTech Connect

    Abgrall, N.; Arnquist, I. J.; Avignone, III, F. T.; Barabash, A. S.; Bertrand, F. E.; Bradley, A. W.; Brudanin, V.; Busch, M.; Buuck, M.; Byram, D.; Caldwell, A. S.; Chan, Y. -D.; Christofferson, C. D.; Chu, P. -H.; Cuesta, C.; Detwiler, J. A.; Doe, P. J.; Dunagan, C.; Efremenko, Yu.; Ejiri, H.; Elliot, S. R.; Fu, Z.; Galindo-Uribarri, A.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Henning, R.; Hoppe, E. W.; Howard, S.; Howe, M. A.; Jasinski, B. R.; Keeter, K. J.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; Li, A.; MacMullin, J.; Martin, R. D.; Massarczyk, R.; Meijer, S. J.; Mertens, S.; Orrell, J. L.; O'Shaughnessy, C.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Rielage, K.; Robertson, R. G. H.; Romero-Romero, E.; Shanks, B.; Shirchenko, M.; Snyder, N.; Suriano, A. M.; Tedeschi, D.; Thompson, A.; Ton, K. T.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C. -H.; Yumatov, V.

    2016-04-04

    The Majorana Collaboration is constructing the Majorana Demonstrator, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of the Majorana Demonstrator. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of the high-voltage path, including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the Majorana Demonstrator was characterized and the micro-discharge effects during the Majorana Demonstrator commissioning phase were studied. Furthermore, a stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.

  10. Compact high voltage solid state switch

    DOEpatents

    Glidden, Steven C.

    2003-09-23

    A compact, solid state, high voltage switch capable of high conduction current with a high rate of current risetime (high di/dt) that can be used to replace thyratrons in existing and new applications. The switch has multiple thyristors packaged in a single enclosure. Each thyristor has its own gate drive circuit that circuit obtains its energy from the energy that is being switched in the main circuit. The gate drives are triggered with a low voltage, low current pulse isolated by a small inexpensive transformer. The gate circuits can also be triggered with an optical signal, eliminating the trigger transformer altogether. This approach makes it easier to connect many thyristors in series to obtain the hold off voltages of greater than 80 kV.

  11. High-Voltage Isolation Transformer

    NASA Technical Reports Server (NTRS)

    Clatterbuck, C. H.; Ruitberg, A. P.

    1985-01-01

    Arcing and field-included surface erosion reduced by electrostatic shields around windings and ferromagnetic core of 80-kilovolt isolation transformer. Fabricated from high-resistivity polyurethane-based material brushed on critical surfaces, shields maintained at approximately half potential difference of windings.

  12. High Voltage Power Supply Design Guide for Space

    NASA Technical Reports Server (NTRS)

    Bever, Renate S.; Ruitberg, Arthur P.; Kellenbenz, Carl W.; Irish, Sandra M.

    2006-01-01

    This book is written for newcomers to the topic of high voltage (HV) in space and is intended to replace an earlier (1970s) out-of-print document. It discusses the designs, problems, and their solutions for HV, mostly direct current, electric power, or bias supplies that are needed for space scientific instruments and devices, including stepping supplies. Output voltages up to 30kV are considered, but only very low output currents, on the order of microamperes. The book gives a brief review of the basic physics of electrical insulation and breakdown problems, especially in gases. It recites details about embedment and coating of the supplies with polymeric resins. Suggestions on HV circuit parts follow. Corona or partial discharge testing on the HV parts and assemblies is discussed both under AC and DC impressed test voltages. Electric field analysis by computer on an HV device is included in considerable detail. Finally, there are many examples given of HV power supplies, complete with some of the circuit diagrams and color photographs of the layouts.

  13. High Voltage Flux Compression Generators

    DTIC Science & Technology

    2008-04-02

    the generator: the armature radial expansion speed, the high explosive (HE) detonation speed, and the armature-stator helical contact speed. Clearly... detonation speeds, which are also the speed at which the self-similar expanding armature cone moves axially, are on the order of 8 to 9 mm/μs...product of detonation speed and the ratio of stator underside circumference to pitch, ( )prvv sc π2Δ= rr . For a typical circumference-to-pitch ratio

  14. Volume Diffuse Dielectric Barrier Discharge Plasma Produced by Nanosecond High Voltage Pulse in Airflow

    NASA Astrophysics Data System (ADS)

    Qi, Haicheng; Gao, Wei; Fan, Zhihui; Liu, Yidi; Ren, Chunsheng

    2016-05-01

    Volume diffuse dielectric barrier discharge (DBD) plasma is produced in subsonic airflow by nanosecond high-voltage pulse power supply with a plate-to-plate discharge cell at 6 mm air gap length. The discharge images, optical emission spectra (OES), the applied voltage and current waveforms of the discharge at the changed airflow rates are obtained. When airflow rate is increased, the transition of the discharge mode and the variations of discharge intensity, breakdown characteristics and the temperature of the discharge plasma are investigated. The results show that the discharge becomes more diffuse, discharge intensity is decreased accompanied by the increased breakdown voltage and time lag, and the temperature of the discharge plasma reduces when airflow of small velocity is introduced into the discharge gap. These phenomena are because that the airflow changes the spatial distribution of the heat and the space charge in the discharge gap. supported by National Natural Science Foundation of China (No. 51437002)

  15. High-voltage electrocution causing bulbar dysfunction

    PubMed Central

    Parvathy, G.; Shaji, C. V.; Kabeer, K. A.; Prasanth, S. R.

    2016-01-01

    Electrical shock can result in neurological complications, involving both peripheral and central nervous systems, which may present immediately or later on. High-voltage electrical injuries are uncommonly reported and may predispose to both immediate and delayed neurologic complications. We report the case of a 68-year-old man who experienced a high-voltage electrocution injury, subsequently developed bulbar dysfunction and spontaneously recovered. We describe the development of bulbar palsy following a significant electrical injury, which showed no evidence of this on magnetic resonance imaging. High-voltage electrocution injuries are a serious problem with potential for both immediate and delayed neurologic sequelae. The existing literature has no reports on bulbar dysfunction following electrocution, apart from motor neuron disease. PMID:27365968

  16. A multi-functional high voltage experiment apparatus for vacuum surface flashover switch research.

    PubMed

    Zeng, Bo; Su, Jian-cang; Cheng, Jie; Wu, Xiao-long; Li, Rui; Zhao, Liang; Fang, Jin-peng; Wang, Li-min

    2015-04-01

    A multifunctional high voltage apparatus for experimental researches on surface flashover switch and high voltage insulation in vacuum has been developed. The apparatus is composed of five parts: pulse generating unit, axial field unit, radial field unit, and two switch units. Microsecond damped ringing pulse with peak-to-peak voltage 800 kV or unipolar pulse with maximum voltage 830 kV is generated, forming transient axial or radial electrical field. Different pulse waveforms and field distributions make up six experimental configurations in all. Based on this apparatus, preliminary experiments on vacuum surface flashover switch with different flashover dielectric materials have been conducted in the axial field unit, and nanosecond pulse is generated in the radial field unit which makes a pulse transmission line in the experiment. Basic work parameters of this kind of switch such as lifetime, breakdown voltage are obtained.

  17. Upper drift region double step partial SOI LDMOSFET: A novel device for enhancing breakdown voltage and output characteristics

    NASA Astrophysics Data System (ADS)

    Jamali Mahabadi, S. E.

    2016-01-01

    A new LDMOSFET structure called upper drift region double step partial silicon on insulator (UDDS-PSOI) is proposed to enhance the breakdown voltage (BV) and output characteristics. The proposed structure contains two vertical steps in the top surface of the drift region. It is demonstrated that in the proposed structure, the lateral electric field distribution is modified by producing two additional electric field peaks, which decrease the common peaks near the drain and gate junctions. The electric field distribution in the drift region is modulated and that of the buried layer is enhanced by the two steps in the top surface of the drift region, thereby resulting in the enhancement of the BV. The effect of device parameters, such as the step height and length in the top surface of the drift region, the doping concentration in the drift region, and the buried oxide length and thickness, on the electric field distribution and the BV of the proposed structure is studied. Simulation results from two-dimensional ATLAS simulator show that the BV of the UDDS-PSOI structure is 120% and 220% higher than that of conventional partial SOI (C-PSOI) and conventional SOI (C-SOI) structures, respectively. Furthermore, the drain current of the UDDS-PSOI is 11% larger than the C-PSOI structure with a drain-source voltage VDS = 100 V and gate-source voltage VGS = 5 V. Simulation results show that Ron in the proposed structure is 74% and 48% of that in C-PSOI and C-SOI structures, respectively.

  18. Potted High Voltage Modules For Space Application

    NASA Astrophysics Data System (ADS)

    Herty, Frank

    2011-10-01

    The European Space Mission GOCE, the Mercury mis- sion BepiColombo and the new High Efficiency Multistage Plasma (HEMP) thruster for the SGEO telecom mission have triggered the development of high voltage power supplies at Astrium Satellites covering different classes of output power (20W up to 1.4kW) and voltages (1kV up to 10kV). These supplies are equipped with encapsulated high voltage modules which have been designed as core functional blocks. The potting material - based on epoxy resin - was developed by Astrium Satellites. It is space-qualified for more than 30 years. Many types of high voltage modules have been manufactured since then, starting from transformer modules for the ERS mission to the modules used for electric propulsion. Technical trends, improvements and future goals of this technology are presented and discussed. New and re- fined processes are presented like the encapsulation of high-power toroidal transformers and the void-free electrical shielding by means of thin copper sheets which are laminated onto the surface of the potting material.

  19. Modular high voltage power supply for chemical analysis

    DOEpatents

    Stamps, James F [Livermore, CA; Yee, Daniel D [Dublin, CA

    2010-05-04

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  20. Modular high voltage power supply for chemical analysis

    DOEpatents

    Stamps, James F.; Yee, Daniel D.

    2008-07-15

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  1. Modular high voltage power supply for chemical analysis

    DOEpatents

    Stamps, James F.; Yee, Daniel D.

    2007-01-09

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC--DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC--DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  2. Planar multijunction high voltage solar cells

    NASA Astrophysics Data System (ADS)

    Evans, J. C., Jr.; Chai, A. T.; Goradia, C.

    1980-01-01

    Technical considerations, preliminary results, and fabrication details are discussed for a family of high-voltage planar multi-junction (PMJ) solar cells which combine the attractive features of planar cells with conventional or interdigitated back contacts and the vertical multijunction (VMJ) solar cell. The PMJ solar cell is internally divided into many voltage-generating regions, called unit cells, which are internally connected in series. The key to obtaining reasonable performance from this device was the separation of top surface field regions over each active unit cell. Using existing solar cell fabricating methods, output voltages in excess of 20 volts per linear centimeter are possible. Analysis of the new device is complex, and numerous geometries are being studied which should provide substantial benefits in both normal sunlight usage as well as with concentrators.

  3. An Inexpensive Source of High Voltage

    ERIC Educational Resources Information Center

    Saraiva, Carlos

    2012-01-01

    As a physics teacher I like recycling old apparatus and using them for demonstrations in my classes. In physics laboratories in schools, sources of high voltage include induction coils or electronic systems that can be bought from companies that sell lab equipment. But these sources can be very expensive. In this article, I will explain how you…

  4. Recommended practices for encapsulating high voltage assemblies

    NASA Technical Reports Server (NTRS)

    Tankisley, E. W.

    1974-01-01

    Preparation and encapsulation of high voltage assemblies are considered. Related problems in encapsulating are brought out in these instructions. A test sampling of four frequently used encapsulating compounds is shown in table form. The purpose of this table is to give a general idea of the working time available and the size of the container required for mixing and de-aerating.

  5. An Inexpensive Source of High Voltage

    ERIC Educational Resources Information Center

    Saraiva, Carlos

    2012-01-01

    As a physics teacher I like recycling old apparatus and using them for demonstrations in my classes. In physics laboratories in schools, sources of high voltage include induction coils or electronic systems that can be bought from companies that sell lab equipment. But these sources can be very expensive. In this article, I will explain how you…

  6. High Voltage Piezoelectric System for Generating Neutrons

    DTIC Science & Technology

    2013-06-01

    Piezoelectric transformer structural modeling - a review,” Ultrasonics , Ferroelectrics and Frequency Control, IEEE Transactions on, vol. 54, pp...1 High Voltage Piezoelectric System for Generating Neutrons Brady Gall, Student Member, IEEE, Scott D. Kovaleski, Senior Member, IEEE, James A...Compact electrical neutron generators are a desir- able alternative to radioisotope neutron sources. A piezoelectric transformer system is presented

  7. Initiation of detonation by a high-voltage discharge in powdered explosives with nanosize inert admixtures

    NASA Astrophysics Data System (ADS)

    Rashkovskii, S. A.; Savenkov, G. G.

    2013-04-01

    It is shown that admixtures of a copper nanopowder in a high-disperse low-sensitivity explosive of the FOX-7 type sharply increase the sensitivity of the mixture to the action of a high-voltage electric discharge and facilitate detonation. The percolation model of propagation of the electric breakdown over a powdered mixture with nanosize admixtures and the model of initiation of detonation by a high-voltage discharge in the mixture of a brisant explosive with an inert admixture are developed. These models are in qualitative and quantitative agreement with experimental data.

  8. A prototype of a high-voltage platform for the KRION ion source

    NASA Astrophysics Data System (ADS)

    Alexandrov, V. S.; Donets, E. E.; Konnov, G. I.; Kosukhin, V. V.; Sidorova, V. O.; Sidorov, A. I.; Shvetsov, V. S.; Trubnikov, G. V.

    2014-09-01

    A high-voltage platform that has been developed for the KRION ion source is described. The platform design concept is explained. The calculations that have been performed of the influence of the design and materials on the source magnetic field make it possible to define a range of materials suitable for manufacturing the platform. The major components of the high-voltage platform, such as a high-voltage power supplier, and decoupling insulators of the high-voltage power source, and the main and supplementary platforms, are chosen and described. It is determined that, to exclude electric breakdowns and corona discharges, one should use an electrically shielded channel with a cryocooler and power supplies for the KRION-source coupling cables.

  9. 30 CFR 77.810 - High-voltage equipment; grounding.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage equipment; grounding. 77.810... COAL MINES Surface High-Voltage Distribution § 77.810 High-voltage equipment; grounding. Frames, supporting structures, and enclosures of stationary, portable, or mobile high-voltage equipment shall...

  10. Space charge inhibition effect of nano-Fe{sub 3}O{sub 4} on improvement of impulse breakdown voltage of transformer oil based on improved Kerr optic measurements

    SciTech Connect

    Yang, Qing Yu, Fei; Sima, Wenxia; Zahn, Markus

    2015-09-15

    Transformer oil-based nanofluids (NFs) with 0.03 g/L Fe{sub 3}O{sub 4} nanoparticle content exhibit 11.2% higher positive impulse breakdown voltage levels than pure transformer oils. To study the effects of the Fe{sub 3}O{sub 4} nanoparticles on the space charge in transformer oil and to explain why the nano-modified transformer oil exhibits improved impulse breakdown voltage characteristics, the traditional Kerr electro-optic field mapping technique is improved by increasing the length of the parallel-plate electrodes and by using a photodetector array as a high light sensitivity device. The space charge distributions of pure transformer oil and of NFs containing Fe{sub 3}O{sub 4} nanoparticles can be measured using the improved Kerr electro-optic field mapping technique. Test results indicate a significant reduction in space charge density in the transformer oil-based NFs with the Fe{sub 3}O{sub 4} nanoparticles. The fast electrons are captured by the nanoparticles and are converted into slow-charged particles in the NFs, which then reduce the space charge density and result in a more uniform electric field distribution. Streamer propagation in the NFs is also obstructed, and the breakdown strengths of the NFs under impulse voltage conditions are also improved.

  11. Studies of Breakdown in High Gradient X-Band Accelerator Structures Using Acoustic Emission

    SciTech Connect

    Frisch, Josef C

    2002-08-23

    X-band accelerator structures meeting the Next Linear Collider (NLC) design requirements have been found to suffer damage due to RF breakdown when processed to high gradients. Improved understanding of these breakdown events is desirable for the development of structure designs, fabrication procedures, and processing techniques that minimize structure damage [1]. Acoustic emission sensors attached to an accelerator structure can detect both nominal and breakdown RF pulses [2]. Using an array of acoustic sensors, we have been able to pinpoint both the cell and azimuth location of individual breakdown events. This allows studies of breakdown time and position sequences so that underlying causes can be determined. The technique provided a significant advance in studies of breakdown in the structure input coupler. In this paper we present acoustic emission sensor data and analysis from the breakdown studies in several x-band accelerator structures.

  12. Numerical simulations of high power microwave dielectric interface breakdown involving outgassing

    SciTech Connect

    Wang Jianguo; Cai Libing; Zhu Xiangqin; Wang Yue; Xuan Chun

    2010-06-15

    With the development of high power microwave (HPM) technology, the power and pulse duration of the HPM source increase substantially, the breakdown of the dielectric window of the HPM source feed has been becoming the major factor of limiting the transmission and radiation of HPM. This paper presents an electrostatic particle-in-cell and Monte Carlo collisions method for simulating the breakdown on HPM dielectric surface and establishes a physical model of HPM dielectric surface breakdown involving outgassing. The breakdown process including the main physical mechanisms, such as the field emission, multipactor, outgassing, and collision of gas ionization, is simulated. The influence of outgassing on the dielectric window breakdown is studied by simulating the breakdown with different outgassing speeds. The similarity between the dc and HPM dielectric surface breakdown is discussed.

  13. Understanding High Voltage Vacuum Insulators for Microsecond Pulses

    SciTech Connect

    J.B., J; D.A., G; T.L., H; E.J., L; R.D., S; L.K., T; G.E., V

    2007-08-15

    High voltage insulation is one of the main areas of pulsed power research and development since the surface of an insulator exposed to vacuum can fail electrically at an applied field more than an order or magnitude below the bulk dielectric strength of the insulator. This is troublesome for applications where high voltage conditioning of the insulator and electrodes is not practical and where relatively long pulses, on the order of several microseconds, are required. Here we give a summary of our approach to modeling and simulation efforts and experimental investigations for understanding flashover mechanism. The computational work is comprised of both filed and particle-in-cell modeling with state-of-the-art commercial codes. Experiments were performed in using an available 100-kV, 10-{micro}s pulse generator and vacuum chamber. The initial experiments were done with polyethylene insulator material in the shape of a truncated cone cut at +45{sup o} angle between flat electrodes with a gap of 1.0 cm. The insulator was sized so there were no flashovers or breakdowns under nominal operating conditions. Insulator flashover or gap closure was induced by introducing a plasma source, a tuft of velvet, in proximity to the insulator or electrode.

  14. Experimental studies of breakdown characteristics in pulse-modulated radio-frequency atmospheric discharge

    NASA Astrophysics Data System (ADS)

    Huo, W. G.; Zhang, X.; Gu, J. L.; Ding, Z. F.

    2016-12-01

    The influences of the pulse off-time on the breakdown voltage of the first pulse and the stable pulse discharge (having repeatedly undergone a process of ignition, maintenance, and extinction) are experimentally investigated in a pulse-modulated radio-frequency atmospheric pressure argon discharge. The experimental results show that the first pulse discharge breakdown voltage decreases, but the stable pulse discharge breakdown voltage increases with increasing the pulse off-time. In a large region of the pulse off-time, the luminescence property of the initial breakdown stage is studied using a high speed camera. The captured images at different pulse off-times demonstrate that the gas breakdown exhibits five key characteristics: single-point random breakdown, multi-point random breakdown, stable uniform breakdown, stable glow mixed with pattern breakdown, and stable nonuniform pattern breakdown. The physical reasons for these results are discussed.

  15. High voltage pulse generator. [Patent application

    DOEpatents

    Fasching, G.E.

    1975-06-12

    An improved high-voltage pulse generator is described which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of the first rectifier connected between the first and second capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. The output voltage can be readily increased by adding additional charging networks. The circuit allows the peak level of the output to be easily varied over a wide range by using a variable autotransformer in the charging circuit.

  16. High stability breakdown of noble gases with femtosecond laser pulses.

    PubMed

    Heins, A M; Guo, Chunlei

    2012-02-15

    In the past, laser-induced breakdown spectroscopy (LIBS) signals have been reported to have a stability independent of the pulse length in solids. In this Letter, we perform the first stability study of femtosecond LIBS in gases (to our best knowledge) and show a significant improvement in signal stability over those achieved with longer pulses. Our study shows that ultrashort-pulse LIBS has an intrinsically higher stability in gas compared to nanosecond-pulse LIBS because of a deterministic ionization process at work in the femtosecond pulse. Relative standard deviations below 1% are demonstrated and are likely only limited by our laser output fluctuations. This enhanced emission stability may open up possibilities for a range of applications, from monitoring rapid gas dynamics to high-quality broadband light sources.

  17. Radio and television interference caused by corona discharges from high-voltage transmission lines

    SciTech Connect

    Sarmadi, M.

    1996-11-01

    Increase in power utility loads in industrialized countries, as well as developing countries, demands a higher level of transmission line voltage. Radio interference (RI) problems have been determined to be a limiting factor in selecting the size of transmission line conductors. Transmission line noise is primarily caused by corona discharges in the immediate vicinity of the conductor. It has been observed that discharges occur during both half-cycles of the applied voltage, but positive corona is usually predominant at AM radio frequencies range with practical high-voltage and extra high-voltage transmission lines. The corona radio noise effect is highly dependent upon the presence of particles on the surface of the conductor and the increase of the electrical gradient beyond the breakdown value of the air. Therefore, corona radio noise varies significantly with the weather and atmospheric conditions and generally increases by 10 to 30 dB in foul weather.

  18. Radio and television interference caused by corona discharges from high-voltage transmission lines

    SciTech Connect

    Sarmadi, M.

    1995-10-01

    Increase in power utility loads in industrialized countries, as well as developing countries, demands a higher level of transmission line voltage. Radio interference (RI) problems have been determined to be a limiting factor in selecting the size of transmission line conductors. Transmission line noise is primarily caused by corona discharges in the immediate vicinity of the conductor. It has been observed that discharges occur during both half-cycles of the applied voltage, but positive corona is usually predominant at AM radio frequencies range with practical high-voltage and extra high-voltage transmission lines. The corona radio noise effect is highly dependent upon the presence of particles on the surface of the conductor and the increase of the electrical gradient beyond the breakdown value of the air. Therefore, corona radio noise varies significantly with the weather and atmospheric conditions and generally increases by 10 to 30 dB in foul weather.

  19. 30 CFR 75.804 - Underground high-voltage cables.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance... cables shall be adequate for the intended current and voltage. Splices made in such cables shall provide...

  20. 30 CFR 75.804 - Underground high-voltage cables.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance... cables shall be adequate for the intended current and voltage. Splices made in such cables shall provide...

  1. 30 CFR 75.804 - Underground high-voltage cables.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance... cables shall be adequate for the intended current and voltage. Splices made in such cables shall provide...

  2. 30 CFR 75.804 - Underground high-voltage cables.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance... cables shall be adequate for the intended current and voltage. Splices made in such cables shall provide...

  3. 30 CFR 75.804 - Underground high-voltage cables.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance... cables shall be adequate for the intended current and voltage. Splices made in such cables shall provide...

  4. High voltage source control on FODS

    NASA Astrophysics Data System (ADS)

    Patalakha, D. I.; Kalinin, A. Yu; Kulagin, N. V.

    2017-01-01

    The implementation of the high voltage power supply control system (HVPSCS) for experimental setup FODS (FOcusing Doublearmed Spectrometer) at accelerator U-70 of the Federal State Budgetary Institution State Research Center Of Russia Institute for High Energy Physics of the National Research Centre “Kurchatov Institute” (hereinafter referred to as IHEP) or for the test bench of the detector components is considered. The required set of hardware is defined and the appropriate software to operate HVPSCS is written in C/C++ codes. The date acquisition (DAQ) system [1] makes automatic control on HVPSCS for data taking run. It allows to get the dependence of appropriate detector parameters on the high voltage supply values and choose its optimal values for FODS detectors. The test run results of HVPSCS are presented.

  5. Background information on high voltage fields.

    PubMed Central

    Janes, D E

    1977-01-01

    The increased demand for power has led to higher voltages for overhead transmission lines. Environmentalists, governmental agencies, and some members of the scientific community have questioned if past biological effects research and experience with lower voltage lines provide adequate bases for predicting the possible health and environmental effects of the higher voltage lines. Only a small amount of work has been done to explore the possible effects, especially long term effects, of the exposure of biological systems to electric fields from transmission lines. Research in Western Europe and the United States has not identified any prompt or acute effects other than spark and electric discharge and no permanent effects. Contrasted with this are the studies of workers in Soviet and Spanish high voltage switchyards that report effects, such as excitability, headaches, drowsiness, fatique, and nausea, that are not found in Soviet line maintenance workers. The results of current and planned research, supported by both U.S. Government agencies and the private sector, should resolve a number of the present uncertanties and provide answers for the many questions concerning potential effects. PMID:598346

  6. High-Voltage Droplet Dispenser Developed

    NASA Technical Reports Server (NTRS)

    Eichenberg, Dennis J.; VanderWal, Randy L.

    2001-01-01

    Various techniques have been applied to deploying individual droplets for many applications, such as the study of the combustion of liquid fuels. Isolated droplet studies are useful in that they allow phenomena to be studied under well-controlled and simplified conditions. A high-voltage droplet dispenser has been developed that is extremely effective in dispensing a wide range of droplets. The dispenser is quite unique in that it utilizes a droplet bias voltage, as well as an ionization pulse, to release the droplet. The droplet is deployed from the end of a needle. A flat-tipped, stainless steel needle attached to a syringe dispenses a known value of liquid that hangs on the needle tip. Somewhat below the droplet is an annular ring electrode. A bias voltage, followed by a voltage pulse, is applied to attract the droplet sufficiently to pull it off the needle. The droplet and needle are oppositely charged relative to the annular electrode. The needle is negatively charged, and the annular ring is positively charged.

  7. Generation of runaway electrons and X-ray emission during breakdown of atmospheric-pressure air by voltage pulses with an ∼0.5-μs front duration

    SciTech Connect

    Kostyrya, I. D.; Tarasenko, V. F.

    2015-03-15

    Results are presented from experiments on the generation of runaway electron beams and X-ray emission in atmospheric-pressure air by using voltage pulses with an ∼0.5-μs front duration. It is shown that the use of small-curvature-radius spherical cathodes (or other cathodes with small curvature radii) decreases the intensity of the runaway electron beam and X-ray emission. It is found that, at sufficiently high voltages at the electrode gap (U{sub m} ∼ 100 kV), the gap breakdown, the formation of a spark channel, and the generation of a runaway electron beam occur over less than 10 ns. At high values of U{sub m} behind the anode that were reached by increasing the cathode size and the electrode gap length, a supershort avalanche electron beam with a full width at half-maximum (FWHM) of up to ∼100 ps was detected. At voltages of ∼50 kV, the second breakdown regime was revealed in which a runaway electron beam with an FWHM of ∼2 ns was generated, whereas the FWHM of the X-ray pulse increased to ∼100 ns. It is established that the energy of the bulk of runaway electrons decreases with increasing voltage front duration and is ⩽30 keV in the first regime and ⩽10 keV in the second regime.

  8. Driving circuit with high accuracy and large driving capability for high voltage buck regulators

    NASA Astrophysics Data System (ADS)

    Yajun, Li; Xinquan, Lai; Qiang, Ye; Bing, Yuan

    2014-12-01

    This paper presents a novel driving circuit for the high-side switch of high voltage buck regulators. A 40 V P-channel lateral double-diffused metal—oxide—semiconductor device whose drain—source and drain—gate can resist high voltage, but whose source—gate must be less than 5 V, is used as the high-side switch. The proposed driving circuit provides a stable and accurate 5 V driving voltage for protecting the high-side switch from breakdown and achieving low on-resistance and simple loop stability design. Furthermore, the driving circuit with excellent driving capability decreases the switching loss and dead time is also developed to reduce the shoot-through current loss. Therefore, power efficiency is greatly improved. An asynchronous buck regulator with the proposed technique has been successfully fabricated by a 0.35 μm CDMOS technology. From the results, compared with the accuracy of 16.38% of the driving voltage in conventional design, a high accuracy of 1.38% is achieved in this work. Moreover, power efficiency is up to 95% at 12 V input and 5 V output.

  9. An Inexpensive Source of High Voltage

    NASA Astrophysics Data System (ADS)

    Saraiva, Carlos

    2012-04-01

    As a physics teacher I like recycling old apparatus and using them for demonstrations in my classes.1-4 In physics laboratories in schools, sources of high voltage include induction coils or electronic systems that can be bought from companies that sell lab equipment. But these sources can be very expensive. In this article, I will explain how you can use a car ignition coil as a high voltage source. Such a coil can be obtained from an old car found in a car salvage yard and used to power cathode ray tubes and discharge tubes to observe the spectra. It can also be used as a source of ignition to simulate explosive combustion that occurs in car engines, rockets, etc. You can also buy these coils in shops that sell car accessories and they are cheaper than induction coils. In Fig. 1 you can see a coil that I used.

  10. High voltage system: Plasma interaction summary

    NASA Technical Reports Server (NTRS)

    Stevens, N. John

    1986-01-01

    The possible interactions that could exist between a high voltage system and the space plasma environment are reviewed. A solar array is used as an example of such a system. The emphasis in this review is on the discrepancies that exist in this technology in both flight and ground experiment data. It has been found that, in ground testing, there are facility effects, cell size effects and area scaling uncertainties. For space applications there are area scaling and discharge concerns for an array as well as the influence of the large space structures on the collection process. There are still considerable uncertainties in the high voltage-space plasma interaction technology even after several years of effort.

  11. Electro-optic high voltage sensor

    DOEpatents

    Davidson, James R.; Seifert, Gary D.

    2002-01-01

    A small sized electro-optic voltage sensor capable of accurate measurement of high levels of voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation into the sensor. A polarization beam displacer serves as a filter to separate the input beam into two beams with orthogonal linear polarizations. The beam displacer is oriented in such a way as to rotate the linearly polarized beams such that they enter a Pockels crystal having at a preferred angle of 45 degrees. The beam displacer is therefore capable of causing a linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels electro-optic effect induces a differential phase shift on the major and minor axes of the input beam as it travels through the Pockels crystal, which causes the input beam to be elliptically polarized. A reflecting prism redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization representing the major and minor axes. The system may include a detector for converting the output beams into electrical signals, and a signal processor for determining the voltage based on an analysis of the output beams. The output beams are amplitude modulated by the frequency of the electric field and the amplitude of the output beams is proportional to the magnitude of the electric field, which is related to the voltage being measured.

  12. 76 FR 70721 - Voltage Coordination on High Voltage Grids; Notice of Staff Workshop

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-15

    ... Energy Regulatory Commission Voltage Coordination on High Voltage Grids; Notice of Staff Workshop Take notice that the Federal Energy Regulatory Commission will hold a Workshop on Voltage Coordination on High... improve coordination and optimization of transfer capability across the Bulk-Power System from a...

  13. High voltage spark carbon fiber detection system

    NASA Technical Reports Server (NTRS)

    Yang, L. C.

    1980-01-01

    The pulse discharge technique was used to determine the length and density of carbon fibers released from fiber composite materials during a fire or aircraft accident. Specifications are given for the system which uses the ability of a carbon fiber to initiate spark discharge across a high voltage biased grid to achieve accurate counting and sizing of fibers. The design of the system was optimized, and prototype hardware proved satisfactory in laboratory and field tests.

  14. Forecasting of high voltage insulation performance: Testing of recommended potting materials and of capacitors

    NASA Technical Reports Server (NTRS)

    Bever, R. S.

    1984-01-01

    Nondestructive high voltage test techniques (mostly electrical methods) are studied to prevent total or catastrophic breakdown of insulation systems under applied high voltage in space. Emphasis is on the phenomenon of partial breakdown or partial discharge (P.D.) as a symptom of insulation quality, notably partial discharge testing under D.C. applied voltage. Many of the electronic parts and high voltage instruments in space experience D.C. applied stress in service, and application of A.C. voltage to any portion thereof would be prohibited. Suggestions include: investigation of the ramp test method for D.C. partial discharge measurements; testing of actual flight-type insulation specimen; perfect plotting resin samples with controlled defects for test; several types of plotting resins and recommendations of the better ones from the electrical characteristics; thermal and elastic properties are also considered; testing of commercial capaciters; and approximate acceptance/rejection/rerating criteria for sample test elements for space use, based on D.C. partial discharge.

  15. Experiments with high-voltage insulators in the presence of tritium

    NASA Astrophysics Data System (ADS)

    Grisham, L. R.; Falter, H.; Causey, R.; Chrisman, W.; Stevenson, T.; Wright, K.

    1991-02-01

    During the final deuterium-tritium phases of the TFTR and JET tokamaks half of the neutral injectors will be used to produce tritium neutral beams to maintain an equal mix of deuterium and tritium in the core plasma, and such requirements may also occur in future devices. This will require that the voltage hold off capabilities of the high voltage insulators in the accelerators be unimpaired by any charge buildups associated with the beta decay of adsorbed layers. We report tests in which we measured the drain currents under high dc voltage of TFTR and JET accelerator insulators while they were successively exposed to vacuum, deuterium and tritium. There did not appear to be any substantial reduction in hold-off capability with tritium, although at some voltages there was a small increase in the leakage current. We also compared the breakdown properties of a plastic tubing filled with deuterium and then tritium at varying pressures, since such tubing has been considered as a high-voltage break in the gas feed system for TFTR, and the presence of large numbers of electron-ion pairs might lead to enhanced Paschen breakdown. We found no significant differences in the behavior for the geometry used.

  16. High voltage electric substation performance in earthquakes

    SciTech Connect

    Eidinger, J.; Ostrom, D.; Matsuda, E.

    1995-12-31

    This paper examines the performance of several types of high voltage substation equipment in past earthquakes. Damage data is provided in chart form. This data is then developed into a tool for estimating the performance of a substation subjected to an earthquake. First, suggests are made about the development of equipment class fragility curves that represent the expected earthquake performance of different voltages and types of equipment. Second, suggestions are made about how damage to individual pieces of equipment at a substation likely affects the post-earthquake performance of the substation as a whole. Finally, estimates are provided as to how quickly a substation, at various levels of damage, can be restored to operational service after the earthquake.

  17. Energy harvesting in high voltage measuring techniques

    NASA Astrophysics Data System (ADS)

    Żyłka, Pawel; Doliński, Marcin

    2016-02-01

    The paper discusses selected problems related to application of energy harvesting (that is, generating electricity from surplus energy present in the environment) to supply autonomous ultra-low-power measurement systems applicable in high voltage engineering. As a practical example of such implementation a laboratory model of a remote temperature sensor is presented, which is self-powered by heat generated in a current-carrying busbar in HV- switchgear. Presented system exploits a thermoelectric harvester based on a passively cooled Peltier module supplying micro-power low-voltage dc-dc converter driving energy-efficient temperature sensor, microcontroller and a fibre-optic transmitter. Performance of the model in laboratory simulated conditions are presented and discussed.

  18. Determination of threshold and maximum operating electric stresses for selected high voltage insulation. Task 3: Investigation of high voltage capacitor insulation

    NASA Astrophysics Data System (ADS)

    Sosnowski, M.; Eager, G. S., Jr.

    1984-03-01

    The threshold voltage of capacitor insulation was investigated. The experimental work was performed on samples prepared from commercial polypropylene insulated, liquid-filled capacitors. The samples were vacuum-impregnated with the original capacitor insulating liquid obtained from the manufacturer. A limited number of full-size capacitor elements also were tested. Impulse voltage breakdown tests with dc voltage prestressing were performed at room temperature and 75 C. From the results of these tests, the threshold voltage of the samples of the capacitor insulation was determined at both temperatures and that of the whole capacitor elements at room temperature. The threshold voltage of the capacitor insulation was found to be approximately equal to the impulse breakdown voltage. No difference was found between the threshold voltage at room temperature and at 75 C. The threshold voltage of the whole capacitor elements at room temperature was found to be equal to approximately 80% of the threshold voltage of the capacitor insulation samples.

  19. Flux-freezing breakdown in high-conductivity magnetohydrodynamic turbulence.

    PubMed

    Eyink, Gregory; Vishniac, Ethan; Lalescu, Cristian; Aluie, Hussein; Kanov, Kalin; Bürger, Kai; Burns, Randal; Meneveau, Charles; Szalay, Alexander

    2013-05-23

    The idea of 'frozen-in' magnetic field lines for ideal plasmas is useful to explain diverse astrophysical phenomena, for example the shedding of excess angular momentum from protostars by twisting of field lines frozen into the interstellar medium. Frozen-in field lines, however, preclude the rapid changes in magnetic topology observed at high conductivities, as in solar flares. Microphysical plasma processes are a proposed explanation of the observed high rates, but it is an open question whether such processes can rapidly reconnect astrophysical flux structures much greater in extent than several thousand ion gyroradii. An alternative explanation is that turbulent Richardson advection brings field lines implosively together from distances far apart to separations of the order of gyroradii. Here we report an analysis of a simulation of magnetohydrodynamic turbulence at high conductivity that exhibits Richardson dispersion. This effect of advection in rough velocity fields, which appear non-differentiable in space, leads to line motions that are completely indeterministic or 'spontaneously stochastic', as predicted in analytical studies. The turbulent breakdown of standard flux freezing at scales greater than the ion gyroradius can explain fast reconnection of very large-scale flux structures, both observed (solar flares and coronal mass ejections) and predicted (the inner heliosheath, accretion disks, γ-ray bursts and so on). For laminar plasma flows with smooth velocity fields or for low turbulence intensity, stochastic flux freezing reduces to the usual frozen-in condition.

  20. The world's first high voltage GaN-on-Diamond power semiconductor devices

    NASA Astrophysics Data System (ADS)

    Baltynov, Turar; Unni, Vineet; Narayanan, E. M. Sankara

    2016-11-01

    This paper presents the detailed fabrication method and extensive electrical characterisation results of the first-ever demonstrated high voltage GaN power semiconductor devices on CVD Diamond substrate. Fabricated circular GaN-on-Diamond HEMTs with gate-to-drain drift length of 17 μm and source field plate length of 3 μm show an off-state breakdown voltage of ∼1100 V. Temperature characterisation of capacitance-voltage characteristics and on-state characteristics provides insight on the temperature dependence of key parameters such as threshold voltage, 2DEG sheet carrier concentration, specific on-state resistance, and drain saturation current in the fabricated devices.

  1. High-Frequency-Induced Cathodic Breakdown during Plasma Electrolytic Oxidation

    NASA Astrophysics Data System (ADS)

    Nominé, A.; Nominé, A. V.; Braithwaite, N. St. J.; Belmonte, T.; Henrion, G.

    2017-09-01

    The present communication shows the possibility of observing microdischarges under cathodic polarization during plasma electrolytic oxidation at high frequency. Cathodic microdischarges can ignite beyond a threshold frequency found close to 2 kHz. The presence (respectively, absence) of an electrical double layer is put forward to explain how the applied voltage can be screened, which therefore prevents (respectively, promotes) the ignition of a discharge. Interestingly, in the conditions of the present study, the electrical double layer requires between 175 and 260 μ s to form. This situates the expected threshold frequency between 1.92 and 2.86 kHz, which is in good agreement with the value obtained experimentally.

  2. High voltage and high current density vertical GaN power diodes

    SciTech Connect

    Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M.; Moseley, M. W.; Crawford, M. H.; King, M. P.; Allerman, A. A.; Kaplar, R. J.; van Heukelom, M. S.; Wierer, J. J.

    2016-01-01

    We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.

  3. High voltage and high current density vertical GaN power diodes

    DOE PAGES

    Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M.; ...

    2016-01-01

    We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.

  4. High voltage solar cell power generating system

    NASA Technical Reports Server (NTRS)

    Levy, E., Jr.; Opjorden, R. W.; Hoffman, A. C.

    1974-01-01

    A laboratory solar power system regulated by on-panel switches has been delivered for operating high power (3 kW), high voltage (15,000 volt) loads (communication tubes, ion thrusters). The modular system consists of 26 solar arrays, each with an integral light source and cooling system. A typical array contains 2,560 series-connected cells. Each light source consists of twenty 500-watt tungsten iodide lamps providing plus or minus 5 percent uniformity at one solar constant. An array temperature of less than 40 C is achieved using an infrared filter, a water-cooled plate, a vacuum hold-down system, and air flushing.

  5. Isolated Fast High-Voltage Switching Circuit

    NASA Technical Reports Server (NTRS)

    Rizzi, Anthony

    1992-01-01

    Electrically isolated switching circuit supplies pulses at potentials up to 6.5 kV and currents up to 6.5 A, lasting as long as few microseconds. Turn-on time about 40 ns; turn-off time about 3 microseconds. Electrically isolated from control circuitry by means of fiber-optic signal coupling and isolated power supply. Electrical isolation protects both technician and equipment. This and similar circuits useful in such industrial and scientific applications as high-voltage, high-frequency test equipment; electrostatic-discharge test equipment; plasma-laboratory instrumentation; spark chambers; and electromagnetic-interference test equipment.

  6. Controllable high voltage source having fast settling time

    NASA Technical Reports Server (NTRS)

    Doong, H.; Acuna, M. H. (Inventor)

    1975-01-01

    A high voltage dc stepping power supply for sampling a utilization device such as an electrostatic analyzer has a relatively fast settling time for voltage steps. The supply includes a waveform generator for deriving a low voltage staircase waveform that feeds a relatively long response time power supply, deriving a high output voltage generally equal to a predetermined multiple of the input voltage. In the power supply, an ac voltage modulated by the staircase waveform is applied to a step-up transformer and then to a voltage multiplier stack to form a high voltage, relatively poor replica of the input waveform at an intermediate output terminal. A constant dc source, applied to the input of the power supply, biases the voltage at the intermediate output terminal to be in excess of the predetermined multiple of the input voltage.

  7. Numerical modeling of post current-zero dielectric breakdown in a low voltage circuit breaker

    NASA Astrophysics Data System (ADS)

    Thenkarai Narayanan, Venkat raman

    Oral delivery of macromolecular therapeutics has remained a challenge. Various factors govern principles of oral absorption, including solubility, tissue permeability, stability and dynamics of the gastrointestinal environment. Developing a macromolecular drug carrier for poorly bioavailable drugs is highly desirable. Dendritic polymers are attractive drug delivery vehicles because of their multifunctional surface groups, globular conformation, branched architecture, low poly dispersity and hydrophilic nature. They also offer traditional benefits of macromolecular systems such as extended plasma residence time and reduced systemic toxicity. Developing a poly(amido amine) (PAMAM) dendrimer-based oral drug delivery vehicle is the long-term goal of this research. PAMAM dendrimers can offer advantages in terms of improving solubility and permeability that can ultimately enhance oral absorption of poorly bioavailable drugs. In this dissertation, first the safety and maximum tolerated dose of six different PAMAM dendrimers was studied after oral and systemic administration. Surface charge of these dendrimers significantly influenced their toxicity profile in vivo with cationic systems proving to be more toxic than anionic systems. The inherent permeability of native anionic dendrimers was then evaluated in a mouse model to assess their potential in oral drug delivery. Results suggested that anionic G6.5 dendrimers exhibited appreciable bioavailability with partial degradation observed under in vivo conditions. Subsequently, camptothecin, a model drug used for the treatment of colorectal carcinoma, was attached to PAMAM dendrimers. Antitumor activity revealed that these conjugates were effective in inhibiting growth of cancer cells in vitro. Preliminary efficacy studies conducted in xenograft tumor models also indicated that dendrimer-drug conjugates have potential for oral chemotherapy. Further detailed in vivo studies are needed to demonstrate the utility of PAMAM

  8. High Voltage in Noble Liquids for High Energy Physics

    SciTech Connect

    Rebel, B.; Bernard, E.; Faham, C. H.; Ito, T. M.; Lundberg, B.; Messina, M.; Monrabal, F.; Pereverzev, S. P.; Resnati, F.; Rowson, P. C.; Soderberg, M.; Strauss, T.; Tomas, A.; Va'vra, J.; Wang, H.

    2014-08-22

    A workshop was held at Fermilab November 8-9, 2013 to discuss the challenges of using high voltage in noble liquids. The participants spanned the fields of neutrino, dark matter, and electric dipole moment physics. All presentations at the workshop were made in plenary sessions. This document summarizes the experiences and lessons learned from experiments in these fields at developing high voltage systems in noble liquids.

  9. Highly oxidising fluids generated during serpentinite breakdown in subduction zones.

    PubMed

    Debret, B; Sverjensky, D A

    2017-09-04

    Subduction zones facilitate chemical exchanges between Earth's deep interior and volcanism that affects habitability of the surface environment. Lavas erupted at subduction zones are oxidized and release volatile species. These features may reflect a modification of the oxidation state of the sub-arc mantle by hydrous, oxidizing sulfate and/or carbonate-bearing fluids derived from subducting slabs. But the reason that the fluids are oxidizing has been unclear. Here we use theoretical chemical mass transfer calculations to predict the redox state of fluids generated during serpentinite dehydration. Specifically, the breakdown of antigorite to olivine, enstatite, and chlorite generates fluids with high oxygen fugacities, close to the hematite-magnetite buffer, that can contain significant amounts of sulfate. The migration of these fluids from the slab to the mantle wedge could therefore provide the oxidized source for the genesis of primary arc magmas that release gases to the atmosphere during volcanism. Our results also show that the evolution of oxygen fugacity in serpentinite during subduction is sensitive to the amount of sulfides and potentially metal alloys in bulk rock, possibly producing redox heterogeneities in subducting slabs.

  10. High-Temperature Enzymatic Breakdown of Cellulose▿†

    PubMed Central

    Wang, Hongliang; Squina, Fabio; Segato, Fernando; Mort, Andrew; Lee, David; Pappan, Kirk; Prade, Rolf

    2011-01-01

    Cellulose is an abundant and renewable biopolymer that can be used for biofuel generation; however, structural entrapment with other cell wall components hinders enzyme-substrate interactions, a key bottleneck for ethanol production. Biomass is routinely subjected to treatments that facilitate cellulase-cellulose contacts. Cellulases and glucosidases act by hydrolyzing glycosidic bonds of linear glucose β-1,4-linked polymers, producing glucose. Here we describe eight high-temperature-operating cellulases (TCel enzymes) identified from a survey of thermobacterial and archaeal genomes. Three TCel enzymes preferentially hydrolyzed soluble cellulose, while two preferred insoluble cellulose such as cotton linters and filter paper. TCel enzymes had temperature optima ranging from 85°C to 102°C. TCel enzymes were stable, retaining 80% of initial activity after 120 h at 85°C. Two modes of cellulose breakdown, i.e., with endo- and exo-acting glucanases, were detected, and with two-enzyme combinations at 85°C, synergistic cellulase activity was observed for some enzyme combinations. PMID:21685160

  11. Gas breakdown driven by L band short-pulse high-power microwave

    SciTech Connect

    Yang Yiming; Yuan Chengwei; Qian Baoliang

    2012-12-15

    High power microwave (HPM) driven gas breakdown is a major factor in limiting the radiation and transmission of HPM. A method that HPM driven gas breakdown could be obtained by changing the aperture of horn antenna is studied in this paper. Changing the effective aperture of horn antenna can adjust the electric field in near field zone, leading to gas breakdown. With this method, measurements of air and SF{sub 6} breakdowns are carried out on a magnetically insulated transmission-line oscillators, which is capable of generating HPM with pulse duration of 30 ns, and frequency of 1.74 GHz. The typical breakdown waveforms of air and SF{sub 6} are presented. Besides, the breakdown field strengths of the two gases are derived at different pressures. It is found that the effects of air and SF{sub 6} breakdown on the transmission of HPM are different: air breakdown mainly shortens the pulse width of HPM while SF{sub 6} breakdown mainly reduces the peak output power of HPM. The electric field threshold of SF{sub 6} is about 2.4 times larger than that of air. These differences suggest that gas properties have a great effect on the transmission characteristic of HPM in gases.

  12. Gas breakdown driven by L band short-pulse high-power microwave

    NASA Astrophysics Data System (ADS)

    Yang, Yi-Ming; Yuan, Cheng-Wei; Qian, Bao-Liang

    2012-12-01

    High power microwave (HPM) driven gas breakdown is a major factor in limiting the radiation and transmission of HPM. A method that HPM driven gas breakdown could be obtained by changing the aperture of horn antenna is studied in this paper. Changing the effective aperture of horn antenna can adjust the electric field in near field zone, leading to gas breakdown. With this method, measurements of air and SF6 breakdowns are carried out on a magnetically insulated transmission-line oscillators, which is capable of generating HPM with pulse duration of 30 ns, and frequency of 1.74 GHz. The typical breakdown waveforms of air and SF6 are presented. Besides, the breakdown field strengths of the two gases are derived at different pressures. It is found that the effects of air and SF6 breakdown on the transmission of HPM are different: air breakdown mainly shortens the pulse width of HPM while SF6 breakdown mainly reduces the peak output power of HPM. The electric field threshold of SF6 is about 2.4 times larger than that of air. These differences suggest that gas properties have a great effect on the transmission characteristic of HPM in gases.

  13. High Voltage Design Guide. Volume IV. Aircraft

    DTIC Science & Technology

    1983-01-01

    Pressure In A Negative Point-Sph-,re Gap In Air 49 18. Dielectric Polarizations 53 19. Temperature Affects AC Dielectric Strength Of Type H Kapton Film 56 20...High Humidity Degrades The Dielectric Strength Of Type H Kapton Film 57 x LIST OF ILLUSTRATIONS (CONT.) FigureP 21. Insulation Thickness Affects...Dielectric Strength Of Type H Kapton Film 57 22. Film Area Vs. Dielectric Strength Of Type H Kapton Film 59 23. Life As A Function Of Voltage For Type H

  14. A Spherical Electro Optic High Voltage Sensor

    DTIC Science & Technology

    1989-06-01

    electro - optic (EO) crystal is introduced for photonic measurement of pulsed high-voltage fields. A spherical shape is used in order to reduce electric field gradients in the vicinity of the sensor. The sensor is pure dielectric and is interrogated remotely using a laser. The sensor does not require the connection of any conducting components, which results in the highest electrical isolation. The spherical nature of the crystal coupled with the incident laser beam, and crossed polarizers (intensity modulation scheme). automatically produces interference figures. The

  15. Safe epoxy encapsulant for high voltage magnetics

    SciTech Connect

    Sanchez, R.O.; Archer, W.E.

    1998-01-01

    This paper describes the use of Formula 456, an aliphatic amine cured epoxy for impregnating coils and high voltage transformers. Sandia has evaluated a number of MDA-free epoxy encapsulants which relied on either anhydride or other aromatic amine curing agents. The use of aliphatic amine curing agents was more recently evaluated and has resulted in the definition of Formula 456 resin. Methylene dianiline (MDA) has been used for more than 20 years as the curing agent for various epoxy formulations throughout the Department of Energy and much of industry. Sandia National Laboratories began the process of replacing MDA with other formulations because of regulations imposed by OSHA on the use of MDA. OSHA has regulated MDA because it is a suspect carcinogen. Typically the elimination of OSHA-regulated materials provides a rare opportunity to qualify new formulations in a range of demanding applications. It was important to take full advantage of that opportunity, although the associated materials qualification effort was costly. Small high voltage transformers are one of those demanding applications. The successful implementation of the new formulation for high reliability transformers will be described. The test results that demonstrate the parts are qualified for use in DOE weapon systems will be presented.

  16. High-Voltage, Asymmetric-Waveform Generator

    NASA Technical Reports Server (NTRS)

    Beegle, Luther W.; Duong, Tuan A.; Duong, Vu A.; Kanik, Isik

    2008-01-01

    The shapes of waveforms generated by commercially available analytical separation devices, such as some types of mass spectrometers and differential mobility spectrometers are, in general, inadequate and result in resolution degradation in output spectra. A waveform generator was designed that would be able to circumvent these shortcomings. It is capable of generating an asymmetric waveform, having a peak amplitude as large as 2 kV and frequency of several megahertz, which can be applied to a capacitive load. In the original intended application, the capacitive load would consist of the drift plates in a differential-mobility spectrometer. The main advantage to be gained by developing the proposed generator is that the shape of the waveform is made nearly optimum for various analytical devices requiring asymmetric-waveform such as differential-mobility spectrometers. In addition, this waveform generator could easily be adjusted to modify the waveform in accordance with changed operational requirements for differential-mobility spectrometers. The capacitive nature of the load is an important consideration in the design of the proposed waveform generator. For example, the design provision for shaping the output waveform is based partly on the principle that (1) the potential (V) on a capacitor is given by V=q/C, where C is the capacitance and q is the charge stored in the capacitor; and, hence (2) the rate of increase or decrease of the potential is similarly proportional to the charging or discharging current. The proposed waveform generator would comprise four functional blocks: a sine-wave generator, a buffer, a voltage shifter, and a high-voltage switch (see Figure 1). The sine-wave generator would include a pair of operational amplifiers in a feedback configuration, the parameters of which would be chosen to obtain a sinusoidal timing signal of the desired frequency. The buffer would introduce a slight delay (approximately equal to 20 ns) but would otherwise

  17. Micrometer-scale electrical breakdown in high-density fluids with large density fluctuations: Numerical model and experimental assessment.

    PubMed

    Muneoka, Hitoshi; Urabe, Keiichiro; Stauss, Sven; Terashima, Kazuo

    2015-04-01

    Experimentally observed electrical breakdown voltages (U(B)) in high-pressure gases and supercritical fluids deviate from classical theories for low-pressure gas discharges, and the underlying breakdown mechanisms for the high-density fluids making the U(B) differ from those in the classical discharges are not yet well understood. In this study, we developed an electrical breakdown model for the high-density fluids taking into account the effects of density fluctuations and ion-enhanced field emission (IEFE). The model is based on the concept that a critical anomaly of the U(B) (local minimum near the critical point) is caused by long mean free electron path leading to a large first Townsend coefficient in locally low-density spatial domains generated by the density fluctuations. Also, a modified Paschen's curve considering the effect of the IEFE on the second Townsend coefficient was used to reproduce the U(B) curve in the high-density fluids. Calculations based on the novel model showed good agreements with the experimentally measured U(B) even near the critical point and it also suggested that the critical anomaly of the U(B) depends on the gap distance. These results indicate that both the density fluctuations and the IEFE have to be considered to comprehend the plasmas in high-density and density-fluctuating fluids.

  18. Architecture for a High-to-Medium-Voltage Power Converter

    NASA Technical Reports Server (NTRS)

    Vorpenian, Vatche

    2008-01-01

    A power converter now undergoing development is required to operate at a DC input potential ranging between 5.5 and 10 kV and a DC output potential of 400 V at a current up to 25 A. This power converter is also required to be sufficiently compact and reliable to fit and operate within the confines of a high-pressure case to be lowered to several miles (approx.5 km) below the surface of the ocean. The architecture chosen to satisfy these requirements calls for a series/ parallel arrangement of 48 high-frequency, pulse-width-modulation (PWM), transformer-isolation DC-to-DC power converter blocks. The input sides of the converter blocks would be connected in series so that the input potential would be divided among them, each of them being exposed to an input potential of no more than 10 kV/48 . 210 V. The series connection of inputs would also enforce a requirement that all the converter blocks operate at the same input current. The outputs of the converter blocks would be connected in a matrix comprising 6 parallel legs, each leg being a cascade of eight outputs wired in series (see figure). All the converter blocks would be identical within the tolerances of the values of their components. A single voltage feedback loop would regulate the output potential. All the converter blocks would be driven by the same PWM waveform generated by this feedback loop. The power transformer of each converter block would have a unity turns ratio and would be capable of withstanding as much as 10 kVDC between its primary and secondary windings. (Although, in general, the turns ratio could be different from unity, the simplest construction for minimizing leakage and maximizing breakdown voltage is attained at a turns ratio of unity.)

  19. 30 CFR 75.813 - High-voltage longwalls; scope.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage longwalls; scope. 75.813 Section 75.813 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution High-Voltage Longwalls § 75.813...

  20. 30 CFR 75.813 - High-voltage longwalls; scope.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage longwalls; scope. 75.813 Section 75.813 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution High-Voltage Longwalls § 75.813...

  1. Electromechanical Breakdown of Barrier-Type Anodized Aluminum Oxide Thin Films Under High Electric Field Conditions

    NASA Astrophysics Data System (ADS)

    Chen, Jianwen; Yao, Manwen; Yao, Xi

    2016-02-01

    Barrier-type anodized aluminum oxide (AAO) thin films were formed on a polished aluminum substrate via electrochemical anodization in 0.1 mol/L aqueous solution of ammonium pentaborate. Electromechanical breakdown occurred under high electric field conditions as a result of the accumulation of mechanical stress in the film-substrate system by subjecting it to rapid thermal treatment. Before the breakdown event, the electricity of the films was transported in a highly nonlinear way. Immediately after the breakdown event, dramatic cracking of the films occurred, and the cracks expanded quickly to form a mesh-like dendrite network. The breakdown strength was significantly reduced because of the electromechanical coupling effect, and was only 34% of the self-healing breakdown strength of the AAO film.

  2. Complete low power controller for high voltage power systems

    SciTech Connect

    Sumner, R.; Blanar, G.

    1997-12-31

    The MHV100 is a custom CMOS integrated circuit, developed for the AMS experiment. It provides complete control for a single channel high voltage (HV) generator and integrates all the required digital communications, D to A and A to D converters, the analog feedback loop and output drivers. This chip has been designed for use in both distributed high voltage systems or for low cost single channel high voltage systems. The output voltage and current range is determined by the external components.

  3. Pulsed electric breakdown in adipose tissue

    NASA Astrophysics Data System (ADS)

    Kolb, Juergen F.; Scully, Noah; Paithankar, Dilip

    2011-08-01

    High voltage pulses of sub-microsecond duration can instigate electrical breakdown in adipose tissue, which is followed by a spark discharge. Breakdown voltages are generally lower than observed for purified lipids but higher than for air. Development of breakdown for the repetitive application of pulses resembles a gradual and stochastic process as reported for partial discharges in solid dielectrics. The inflicted tissue damage itself is confined to the gap between electrodes, providing a method to use spark discharges as a precise surgical technique.

  4. Planar edge terminations for high voltage 4H-SiC power MOSFETs

    NASA Astrophysics Data System (ADS)

    Soler, Victor; Berthou, Maxime; Mihaila, Andrei; Monserrat, Josep; Godignon, Philippe; Rebollo, José; Millán, José

    2017-03-01

    Several edge termination structures for high voltage 4H-SiC devices compatible with a planar power MOSFET fabrication process are analyzed in this paper. The edge terminations’ efficiency has been experimentally demonstrated on PiN diodes with breakdown voltage capabilities ranging from 2 to 5 kV, fabricated within a full power MOSFET process technology. The studied edge terminations consist of typical JTEs, novel FGRs using MOSFET P-well implantation, as well as a combination of JTEs and FGRs. The experimental results have shown a good efficiency of most of the implemented edge terminations. It is also shown that P-well FGRs could be an effective cost solution for high voltage SiC based power MOSFETs. Moreover, the edge termination combining JTEs and FGRs concepts shows a better tolerance of breakdown voltage values against variations in the JTE dose. The same edge termination design allows one to obtain a good efficiency for both 1.7 and 4.5 kV PiN diodes. The optimal termination has been successfully implemented on 4.5 kV power MOSFETs.

  5. Atmospheric pressure microplasmas in ZnO nanoforests under high voltage stress

    NASA Astrophysics Data System (ADS)

    Noor, Nafisa; Manthina, Venkata; Cil, Kadir; Adnane, Lhacene; Agrios, Alexander G.; Gokirmak, Ali; Silva, Helena

    2015-09-01

    Atmospheric pressure ZnO microplasmas have been generated by high amplitude single pulses and DC voltages applied using micrometer-separated probes on ZnO nanoforests. The high voltage stress triggers plasma breakdown and breakdown in the surrounding air followed by sublimation of ZnO resulting in strong blue and white light emission with sharp spectral lines and non-linear current-voltage characteristics. The nanoforests are made of ZnO nanorods (NRs) grown on fluorine doped tin oxide (FTO) glass, poly-crystalline silicon and bulk p-type silicon substrates. The characteristics of the microplasmas depend strongly on the substrate and voltage parameters. Plasmas can be obtained with pulse durations as short as ˜1 μs for FTO glass substrate and ˜100 ms for the silicon substrates. Besides enabling plasma generation with shorter pulses, NRs on FTO glass substrate also lead to better tunability of the operating gas temperature. Hot and cold ZnO microplasmas have been observed with these NRs on FTO glass substrate. Sputtering of nanomaterials during plasma generation in the regions surrounding the test area has also been noticed and result in interesting ZnO nanostructures (`nano-flowers' and `nano-cauliflowers'). A practical way of generating atmospheric pressure ZnO microplasmas may lead to various lighting, biomedical and material processing applications.

  6. High Voltage Power Transmission for Wind Energy

    NASA Astrophysics Data System (ADS)

    Kim, Young il

    The high wind speeds and wide available area at sea have recently increased the interests on offshore wind farms in the U.S.A. As offshore wind farms become larger and are placed further from the shore, the power transmission to the onshore grid becomes a key feature. Power transmission of the offshore wind farm, in which good wind conditions and a larger installation area than an onshore site are available, requires the use of submarine cable systems. Therefore, an underground power cable system requires unique design and installation challenges not found in the overhead power cable environment. This paper presents analysis about the benefit and drawbacks of three different transmission solutions: HVAC, LCC/VSC HVDC in the grid connecting offshore wind farms and also analyzed the electrical characteristics of underground cables. In particular, loss of HV (High Voltage) subsea power of the transmission cables was evaluated by the Brakelmann's theory, taking into account the distributions of current and temperature.

  7. Depression in high voltage power line workers.

    PubMed

    de Souza, Suerda Fortaleza; Carvalho, Fernando Martins; de Araújo, Tânia Maria; Koifman, Sergio; Porto, Lauro Antonio

    2012-06-01

    To investigate the association between effort-reward imbalance and depressive symptoms among workers in high voltage power lines. A cross-sectional study among 158 workers from an electric power company in Northeast Brazil. The main independent variables were the Effort-Reward Imbalance Model (ERI) dimensions and the main dependent variable was the prevalence of depression, as measured by the Center for Epidemiologic Studies Depression (CES-D) scale. Data were analyzed by multiple logistic regression techniques. The group of low reward workers presented a depression prevalence rate 6.2 times greater than those in the high reward group. The depression prevalence rate was 3.3 greater in workers in the situation of imbalanced effort-reward than in those in effort-reward equilibrium. The prevalence of depression was strongly associated with psychosocial factors present in the work of electricity workers.

  8. High-frequency graphene voltage amplifier.

    PubMed

    Han, Shu-Jen; Jenkins, Keith A; Valdes Garcia, Alberto; Franklin, Aaron D; Bol, Ageeth A; Haensch, Wilfried

    2011-09-14

    While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate design with gate length of 500 nm. The graphene common-source amplifier exhibits ∼5 dB low frequency gain with the 3 dB bandwidth greater than 6 GHz. This first AC voltage gain demonstration of a GFET is attributed to the clear current saturation in the device, which is enabled by an ultrathin gate dielectric (4 nm HfO(2)) of the embedded gate structures. The device also shows extrinsic transconductance of 1.2 mS/μm at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date.

  9. High voltage performance of a dc photoemission electron gun with centrifugal barrel-polished electrodes

    NASA Astrophysics Data System (ADS)

    Hernandez-Garcia, C.; Bullard, D.; Hannon, F.; Wang, Y.; Poelker, M.

    2017-09-01

    The design and fabrication of electrodes for direct current (dc) high voltage photoemission electron guns can significantly influence their performance, most notably in terms of maximum achievable bias voltage. Proper electrostatic design of the triple-point junction shield electrode minimizes the risk of electrical breakdown (arcing) along the insulator-cable plug interface, while the electrode shape is designed to maintain <10 MV/m at the desired operating voltage aiming at little or no field emission once conditioned. Typical electrode surface preparation involves diamond-paste polishing by skilled personnel, requiring several weeks of effort per electrode. In this work, we describe a centrifugal barrel-polishing technique commonly used for polishing the interior surface of superconducting radio frequency cavities but implemented here for the first time to polish electrodes for dc high voltage photoguns. The technique reduced polishing time from weeks to hours while providing surface roughness comparable to that obtained with diamond-paste polishing and with unprecedented consistency between different electrode samples. We present electrode design considerations and high voltage conditioning results to 360 kV (˜11 MV/m), comparing barrel-polished electrode performance to that of diamond-paste polished electrodes. Tests were performed using a dc high voltage photogun with an inverted-geometry ceramic insulator design.

  10. Stimulation of high-frequency breakdown of gas in Uragan-3M torsatron by runaway electrons

    NASA Astrophysics Data System (ADS)

    Tarasov, I. K.; Tarasov, M. I.; Sitnikov, D. A.; Pashnev, V. K.; Lytova, M. A.

    2016-01-01

    In experiments on confinement and heating of plasma in the Uragan-3M torsatron, the method of high-frequency breakdown of the working gas is used. In these experiments, in conditions of a relatively stable magnetic field, the rf power supplied to the setup chamber has a frequency close to the ion-cyclotron frequency. Such a method of gas breakdown is not always sufficiently reliable. In our experiments, preliminary ionization of the working gas by the run-away electron beam is used for stabilizing the breakdown. This work contains the results of experiments on enhancement of the runaway electron beam and on the interaction of the runaway electron beam in the Uragan-3M torsatron with the HF electromagnetic pump field. This enables us to formulate a number of recommendations for using spontaneously formed beams of accelerated particles for stimulating the rf breakdown. Our results confirm the possibility of gas breakdown by runaway electrons.

  11. Review of recent theories and experiments for improving high-power microwave window breakdown thresholds

    SciTech Connect

    Chang Chao; Liu Guozhi; Tang Chuanxiang; Chen Changhua; Fang Jinyong

    2011-05-15

    Dielectric window breakdown is a serious challenge in high-power microwave (HPM) transmission and radiation. Breakdown at the vacuum/dielectric interface is triggered by multipactor and finally realized by plasma avalanche in the ambient desorbed or evaporated gas layer above the dielectric. Methods of improving breakdown thresholds are key challenges in HPM systems. First, the main theoretical and experimental progress is reviewed. Next, the mechanisms of multipactor suppression for periodic rectangular and triangular surface profiles by dynamic analysis and particle-in-cell simulations are surveyed. Improved HPM breakdown thresholds are demonstrated by proof-of-principle and multigigawatt experiments. The current theories and experiments of using dc magnetic field to resonantly accelerate electrons to suppress multipactor are also synthesized. These methods of periodic profiles and magnetic field may solve the key issues of HPM vacuum dielectric breakdown.

  12. High voltage studies of inverted-geometry ceramic insulators for a 350 kV DC polarized electron gun

    DOE PAGES

    Hernandez-Garcia, C.; Poelker, M.; Hansknecht, J.

    2016-02-01

    Jefferson Lab is constructing a 350 kV direct current high voltage photoemission gun employing a compact inverted-geometry insulator. This photogun will produce polarized electron beams at an injector test facility intended for low energy nuclear physics experiments, and to assist the development of new technology for the Continuous Electron Beam Accelerator Facility. A photogun operating at 350kV bias voltage reduces the complexity of the injector design, by eliminating the need for a graded-beta radio frequency “capture” section employed to boost lower voltage beams to relativistic speed. However, reliable photogun operation at 350 kV necessitates solving serious high voltage problems relatedmore » to breakdown and field emission. This study focuses on developing effective methods to avoid breakdown at the interface between the insulator and the commercial high voltage cable that connects the photogun to the high voltage power supply. Three types of inverted insulators were tested, in combination with two electrode configurations. Our results indicate that tailoring the conductivity of the insulator material, and/or adding a cathode triple-junction screening electrode, effectively serves to increase the hold-off voltage from 300kV to more than 375kV. In conclusion, electrostatic field maps suggest these configurations serve to produce a more uniform potential gradient across the insulator.« less

  13. High voltage studies of inverted-geometry ceramic insulators for a 350 kV DC polarized electron gun

    SciTech Connect

    Hernandez-Garcia, C.; Poelker, M.; Hansknecht, J.

    2016-02-01

    Jefferson Lab is constructing a 350 kV direct current high voltage photoemission gun employing a compact inverted-geometry insulator. This photogun will produce polarized electron beams at an injector test facility intended for low energy nuclear physics experiments, and to assist the development of new technology for the Continuous Electron Beam Accelerator Facility. A photogun operating at 350kV bias voltage reduces the complexity of the injector design, by eliminating the need for a graded-beta radio frequency “capture” section employed to boost lower voltage beams to relativistic speed. However, reliable photogun operation at 350 kV necessitates solving serious high voltage problems related to breakdown and field emission. This study focuses on developing effective methods to avoid breakdown at the interface between the insulator and the commercial high voltage cable that connects the photogun to the high voltage power supply. Three types of inverted insulators were tested, in combination with two electrode configurations. Our results indicate that tailoring the conductivity of the insulator material, and/or adding a cathode triple-junction screening electrode, effectively serves to increase the hold-off voltage from 300kV to more than 375kV. In conclusion, electrostatic field maps suggest these configurations serve to produce a more uniform potential gradient across the insulator.

  14. A new latch-free LIGBT on SOI with very high current density and low drive voltage

    NASA Astrophysics Data System (ADS)

    Olsson, J.; Vestling, L.; Eklund, K.-H.

    2016-01-01

    A new latch-free LIGBT on SOI is presented. The new device combines advantages from both LDMOS as well as LIGBT technologies; high breakdown voltage, high drive current density, low control voltages, at the same time eliminating latch-up problems. The new LIGBT has the unique property of independent scaling of the input control device, i.e. LDMOS, and the output part of the device, i.e. the p-n-p part. This allows for additional freedom in designing and optimizing the device properties. Breakdown voltage of over 200 V, on-state current density over 3 A/mm, specific on-resistance below 190 mΩ mm2, and latch-free operation is demonstrated.

  15. Breakdown properties of epoxy nanodielectric

    SciTech Connect

    Tuncer, Enis; Cantoni, Claudia; More, Karren Leslie; James, David Randy; Polyzos, Georgios; Sauers, Isidor; Ellis, Alvin R

    2010-01-01

    Recent developments in polymeric dielectric nanocomposites have shown that these novel materials can improve design of high voltage (hv) components and systems. Some of the improvements can be listed as reduction in size (compact hv systems), better reliability, high energy density, voltage endurance, and multifunctionality. Nanodielectric systems demonstrated specific improvements that have been published in the literature by different groups working with electrical insulation materials. In this paper we focus on the influence of in-situ synthesized titanium dioxide (TiO{sub 2}) nanoparticles on the dielectric breakdown characteristics of an epoxy-based nanocomposite system. The in-situ synthesis of the particles creates small nanoparticles on the order of 10 nm with narrow size distribution and uniform particle dispersion in the matrix. The breakdown strength of the nanocomposite was studied as a function of TiO{sub 2} concentration at cryogenic temperatures. It was observed that between 2 and 6wt% yields high breakdown values for the nanodielectric.

  16. Physics-Based Compact Model for CIGS and CdTe Solar Cells: From Voltage-Dependent Carrier Collection to Light-Enhanced Reverse Breakdown: Preprint

    SciTech Connect

    Sun, Xingshu; Alam, Muhammad Ashraful; Raguse, John; Garris, Rebekah; Deline, Chris; Silverman, Timothy

    2015-10-15

    In this paper, we develop a physics-based compact model for copper indium gallium diselenide (CIGS) and cadmium telluride (CdTe) heterojunction solar cells that attributes the failure of superposition to voltage-dependent carrier collection in the absorber layer, and interprets light-enhanced reverse breakdown as a consequence of tunneling-assisted Poole-Frenkel conduction. The temperature dependence of the model is validated against both simulation and experimental data for the entire range of bias conditions. The model can be used to characterize device parameters, optimize new designs, and most importantly, predict performance and reliability of solar panels including the effects of self-heating and reverse breakdown due to partial-shading degradation.

  17. High-gradient breakdown studies of an X -band Compact Linear Collider prototype structure

    NASA Astrophysics Data System (ADS)

    Wu, Xiaowei; Shi, Jiaru; Chen, Huaibi; Shao, Jiahang; Abe, Tetsuo; Higo, Toshiyasu; Matsumoto, Shuji; Wuensch, Walter

    2017-05-01

    A Compact Linear Collider prototype traveling-wave accelerator structure fabricated at Tsinghua University was recently high-gradient tested at the High Energy Accelerator Research Organization (KEK). This X -band structure showed good high-gradient performance of up to 100 MV /m and obtained a breakdown rate of 1.27 ×10-8 per pulse per meter at a pulse length of 250 ns. This performance was similar to that of previous structures tested at KEK and the test facility at the European Organization for Nuclear Research (CERN), thereby validating the assembly and bonding of the fabricated structure. Phenomena related to vacuum breakdown were investigated and are discussed in the present study. Evaluation of the breakdown timing revealed a special type of breakdown occurring in the immediately succeeding pulse after a usual breakdown. These breakdowns tended to occur at the beginning of the rf pulse, whereas usual breakdowns were uniformly distributed in the rf pulse. The high-gradient test was conducted under the international collaboration research program among Tsinghua University, CERN, and KEK.

  18. High voltage supply for neutron tubes in well logging applications

    DOEpatents

    Humphreys, D. Russell

    1989-01-01

    A high voltage supply is provided for a neutron tube used in well logging. The "biased pulse" supply of the invention combines DC and "full pulse" techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.

  19. High voltage ignition of high pressure microwave powered UV light sources

    SciTech Connect

    Frank, J.D.; Cekic, M.; Wood, C.H.

    1997-12-31

    Industrial microwave powered (electrodeless) light sources have been limited to quiescent pressures of {approximately}300 Torr of buffer gas and metal-halide fills. The predominant reason for such restrictions has been the inability to microwave ignite the plasma due to the collisionality of higher pressure fills and/or the electronegativity of halide bulb chemistries. Commercially interesting bulb fills require electric fields for ionization that are often large multiples of the breakdown voltage for air. Many auxiliary ignition methods are evaluated for efficiency and practicality before the choice of a high-voltage system with a retractable external electrode. The scheme utilizes a high voltage pulse power supply and a novel field emission source. Acting together they create localized condition of pressure reduction and high free electron density. This allows the normal microwave fields to drive this small region into avalanche, ignite the bulb, and heat the plasma to its operating point (T{sub e} {approx} 0.5 eV). This process is currently being used in a new generation of lamps, which are using multi-atmospheric excimer laser chemistries and pressure and constituent enhanced metal-halide systems. At the present time, production prototypes produce over 900 W of radiation in a 30 nm band, centered at 308 nm. Similarly, these prototypes when loaded with metal-halide bulb fills produce over 1 kW of radiation in 30 nm wide bands, centered about the wavelength of interest.

  20. Breakdown properties of irradiated MOS capacitors

    SciTech Connect

    Paccagnella, A.; Candelori, A. |; Milani, A.; Formigoni, E.; Ghidini, G.; Drera, D.; Pellizzer, F. |; Fuochi, P.G.; Lavale, M.

    1996-12-01

    The authors have studied the effects of ionizing and non-ionizing radiation on the breakdown properties of different types of MOS capacitors, with thick (200 nm) and thin (down to 8 nm) oxides. In general, no large variations of the average breakdown field, time-to-breakdown at constant voltage, or charge-to-breakdown at constant voltage, or charge-to-breakdown values have been observed after high dose irradiation (20 Mrad(Si) 9 MeV electrons on thin and thick oxides, 17(Si) Mrad Co{sup 60} gamma and 10{sup 14} neutrons/cm{sup 2} only on thick oxides). However, some modifications of the cumulative failure distributions have been observed in few of the oxides tested.

  1. Radiofrequency exposure near high-voltage lines.

    PubMed Central

    Vignati, M; Giuliani, L

    1997-01-01

    Many epidemiologic studies suggest a relationship between incidence of diseases like cancer and leukemia and exposure to 50/60 Hz magnetic fields. Some studies suggest a relationship between leukemia incidence in populations residing near high-voltage lines and the distance to these lines. Other epidemiologic studies suggest a relationship between leukemia incidence and exposure to 50/60 Hz magnetic fields (measured or estimated) and distance from the main system (220 or 120 V). The present work does not question these results but is intended to draw attention to a possible concurrent cause that might also increase the incidence of this disease; the presence on an electric grid of radiofrequency currents used for communications and remote control. These currents have been detected on high- and medium-voltage lines. In some cases they are even used on the main system for remote reading of electric meters. This implies that radiofrequency (RF) magnetic fields are present near the electric network in addition to the 50/60 Hz fields. This intensity of these RF fields is low but the intensity of currents induced in the human body by exposure to magnetic fields increases with frequency. Because scientific research has not yet clarified whether the risk is related to the value of magnetic induction or to the currents this kind of exposure produces in the human body, it is reasonable to suggest that the presence of the RF magnetic fields must be considered in the context of epidemiologic studies. Images Figure 3. Figure 4. Figure 5. PMID:9467084

  2. X-rays and microwave RF power from high voltage laboratory sparks

    NASA Astrophysics Data System (ADS)

    Montanyà, Joan; Fabró, Ferran; March, Víctor; van der Velde, Oscar; Solà, Glòria; Romero, David; Argemí, Oriol

    2015-12-01

    Lightning flashes involve high energy processes that still are not well understood. In the laboratory, high voltage pulses are used to produce long sparks in open air allowing the production of energetic radiation. In this paper X-rays emitted by long sparks in air are simultaneously measured with the RF power radiation at 2.4 GHz. The experiment showed that the measured RF power systematically peaks at the time of the X-rays generation (in the microsecond time scale). All of the triggered sparks present peaks of RF radiation before the breakdown of the gap. The RF peaks are related to the applied voltage to the gap. RF peaks are also detected in discharges without breakdown. Cases where X-rays are detected presented higher RF power. The results indicate that at some stage of the discharge, before the breakdown, electrons are very fast accelerated letting in some cases to produce X-rays. Microwave radiation and X-rays may come from the same process.

  3. Non-intrusive high voltage measurement using slab coupled optical sensors

    NASA Astrophysics Data System (ADS)

    Stan, Nikola; Chadderdon, Spencer; Selfridge, Richard H.; Schultz, Stephen M.

    2014-03-01

    We present an optical fiber non-intrusive sensor for measuring high voltage transients. The sensor converts the unknown voltage to electric field, which is then measured using slab-coupled optical fiber sensor (SCOS). Since everything in the sensor except the electrodes is made of dielectric materials and due to the small field sensor size, the sensor is minimally perturbing to the measured voltage. We present the details of the sensor design, which eliminates arcing and minimizes local dielectric breakdown using Teflon blocks and insulation of the whole structure with transformer oil. The structure has a capacitance of less than 3pF and resistance greater than 10 GΩ. We show the measurement of 66.5 kV pulse with a 32.6μs time constant. The measurement matches the expected value of 67.8 kV with less than 2% error.

  4. Conceptual definition of a high voltage power supply test facility

    NASA Technical Reports Server (NTRS)

    Biess, John J.; Chu, Teh-Ming; Stevens, N. John

    1989-01-01

    NASA Lewis Research Center is presently developing a 60 GHz traveling wave tube for satellite cross-link communications. The operating voltage for this new tube is - 20 kV. There is concern about the high voltage insulation system and NASA is planning a space station high voltage experiment that will demonstrate both the 60 GHz communications and high voltage electronics technology. The experiment interfaces, requirements, conceptual design, technology issues and safety issues are determined. A block diagram of the high voltage power supply test facility was generated. It includes the high voltage power supply, the 60 GHz traveling wave tube, the communications package, the antenna package, a high voltage diagnostics package and a command and data processor system. The interfaces with the space station and the attached payload accommodations equipment were determined. A brief description of the different subsystems and a discussion of the technology development needs are presented.

  5. High breakdown-strength composites from liquid silicone rubbers

    NASA Astrophysics Data System (ADS)

    Vudayagiri, Sindhu; Zakaria, Shamsul; Yu, Liyun; Sager Hassouneh, Suzan; Benslimane, Mohamed; Ladegaard Skov, Anne

    2014-10-01

    In this paper we investigate the performance of liquid silicone rubbers (LSRs) as dielectric elastomer transducers. Commonly used silicones in this application include room-temperature vulcanisable (RTV) silicone elastomers and composites thereof. Pure LSRs and their composites with commercially available fillers (an anatase TiO2, a core-shell TiO2-SiO2 and a CaCu3Ti4O12 filler) are evaluated with respect to dielectric permittivity, elasticity (Young’s modulus) and electrical breakdown strength. Film formation properties are also evaluated. The best-performing formulations are those with anatase TiO2 nanoparticles, where the highest relative dielectric permittivity of 5.6 is obtained, and with STX801, a core-shell morphology TiO2-SiO2 filler from Evonik, where the highest breakdown strength of 173 V μm-1 is obtained.

  6. Statistics of vacuum breakdown in the high-gradient and low-rate regime

    NASA Astrophysics Data System (ADS)

    Wuensch, Walter; Degiovanni, Alberto; Calatroni, Sergio; Korsbäck, Anders; Djurabekova, Flyura; Rajamäki, Robin; Giner-Navarro, Jorge

    2017-01-01

    In an increasing number of high-gradient linear accelerator applications, accelerating structures must operate with both high surface electric fields and low breakdown rates. Understanding the statistical properties of breakdown occurrence in such a regime is of practical importance for optimizing accelerator conditioning and operation algorithms, as well as of interest for efforts to understand the physical processes which underlie the breakdown phenomenon. Experimental data of breakdown has been collected in two distinct high-gradient experimental set-ups: A prototype linear accelerating structure operated in the Compact Linear Collider Xbox 12 GHz test stands, and a parallel plate electrode system operated with pulsed DC in the kV range. Collected data is presented, analyzed and compared. The two systems show similar, distinctive, two-part distributions of number of pulses between breakdowns, with each part corresponding to a specific, constant event rate. The correlation between distance and number of pulses between breakdown indicates that the two parts of the distribution, and their corresponding event rates, represent independent primary and induced follow-up breakdowns. The similarity of results from pulsed DC to 12 GHz rf indicates a similar vacuum arc triggering mechanism over the range of conditions covered by the experiments.

  7. Gas Temperature Effects on Electrical Breakdown in Cylindrical Electrodes

    NASA Astrophysics Data System (ADS)

    Uhm, Han; Jung, She

    2002-11-01

    One of the most important applications of atmospheric pressure plasma is in the corona discharge system, for the potential reduction of NOx and SOx gas emissions from diesel engines. However, the conventional corona discharge system for the emission control application requires a high electrical voltage (typically 45 kV or higher), making its high voltage modulator heavy and bulky with insulating material. We, therefore, investigate the influence of the gas temperature on the electrical breakdown properties in the cylindrical electrode system. A theoretical model of the electrical breakdown in a cylindrical electrode system is briefly summarized, by making use of Paschen¡¯s law. The breakdown voltage increases, reaches its peak and decreases, as the aspect ratio a/b increases from 0.01 to unity, where a and b are radii of the inner and outer electrodes, respectively. The experimental data agree remarkably well with the theoretical predictions. The breakdown voltage V in a high gas temperature Tg is given by V = (Tr/Tg)V0, where V0 is the breakdown voltage at the room temperature Tr. Obviously, the breakdown voltage decreases as the gas temperature Tg increases. The experimental data agree well with the theoretical values. It is, therefore, concluded that the breakdown voltage is inversely proportional to the gas temperature Tg as predicted from the theoretical analysis.

  8. Breakdown characteristics of xenon HID Lamps

    NASA Astrophysics Data System (ADS)

    Babaeva, Natalia; Sato, Ayumu; Brates, Nanu; Noro, Koji; Kushner, Mark

    2009-10-01

    The breakdown characteristics of mercury free xenon high intensity discharge (HID) lamps exhibit a large statistical time lag often having a large scatter in breakdown voltages. In this paper, we report on results from a computational investigation of the processes which determine the ignition voltages for positive and negative pulses in commercial HID lamps having fill pressures of up to 20 atm. Steep voltage rise results in higher avalanche electron densities and earlier breakdown times. Circuit characteristics also play a role. Large ballast resistors may limit current to the degree that breakdown is quenched. The breakdown voltage critically depends on cathode charge injection by electric field emission (or other mechanisms) which in large part controls the statistical time lag for breakdown. For symmetric lamps, ionization waves (IWs) simultaneously develop from the bottom and top electrodes. Breakdown typically occurs when the top and bottom IWs converge. Condensed salt layers having small conductivities on the inner walls of HID lamps and on the electrodes can influence the ignition behavior. With these layers, IWs tend to propagate along the inner wall and exhibit a different structure depending on the polarity.

  9. Scintillation Breakdowns in Chip Tantalum Capacitors

    NASA Technical Reports Server (NTRS)

    Teverovsky, Alexander

    2008-01-01

    Scintillations in solid tantalum capacitors are momentarily local breakdowns terminated by a self-healing or conversion to a high-resistive state of the manganese oxide cathode. This conversion effectively caps the defective area of the tantalum pentoxide dielectric and prevents short-circuit failures. Typically, this type of breakdown has no immediate catastrophic consequences and is often considered as nuisance rather than a failure. Scintillation breakdowns likely do not affect failures of parts under surge current conditions, and so-called "proofing" of tantalum chip capacitors, which is a controllable exposure of the part after soldering to voltages slightly higher than the operating voltage to verify that possible scintillations are self-healed, has been shown to improve the quality of the parts. However, no in-depth studies of the effect of scintillations on reliability of tantalum capacitors have been performed so far. KEMET is using scintillation breakdown testing as a tool for assessing process improvements and to compare quality of different manufacturing lots. Nevertheless, the relationship between failures and scintillation breakdowns is not clear, and this test is not considered as suitable for lot acceptance testing. In this work, scintillation breakdowns in different military-graded and commercial tantalum capacitors were characterized and related to the rated voltages and to life test failures. A model for assessment of times to failure, based on distributions of breakdown voltages, and accelerating factors of life testing are discussed.

  10. Neutron-induced single event burnout in high voltage electronics

    SciTech Connect

    Normand, E.; Wert, J.L.; Oberg, D.L.; Majewski, P.P.; Voss, P.; Wender, S.A.

    1997-12-01

    Energetic neutrons with an atmospheric neutron spectrum, which were demonstrated to induce single event burnout in power MOSFETs, have been shown to induce burnout in high voltage (>3,000V) electronics when operated at voltages as low as 50% of rated voltage. The laboratory failure rates correlate well with field failure rates measured in Europe.

  11. A new very high voltage semiconductor switch

    NASA Technical Reports Server (NTRS)

    Sundberg, G. R.

    1985-01-01

    A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of 10 higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.

  12. Dielectric Breakdown of Cell Membranes

    PubMed Central

    Zimmermann, U.; Pilwat, G.; Riemann, F.

    1974-01-01

    With human and bovine red blood cells and Escherichia coli B, dielectric breakdown of cell membranes could be demonstrated using a Coulter Counter (AEG-Telefunken, Ulm, West Germany) with a hydrodynamic focusing orifice. In making measurements of the size distributions of red blood cells and bacteria versus increasing electric field strength and plotting the pulse heights versus the electric field strength, a sharp bend in the otherwise linear curve is observed due to the dielectric breakdown of the membranes. Solution of Laplace's equation for the electric field generated yields a value of about 1.6 V for the membrane potential at which dielectric breakdown occurs with modal volumes of red blood cells and bacteria. The same value is also calculated for red blood cells by applying the capacitor spring model of Crowley (1973. Biophys. J. 13:711). The corresponding electric field strength generated in the membrane at breakdown is of the order of 4 · 106 V/cm and, therefore, comparable with the breakdown voltages for bilayers of most oils. The critical detector voltage for breakdown depends on the volume of the cells. The volume-dependence predicted by Laplace theory with the assumption that the potential generated across the membrane is independent of volume, could be verified experimentally. Due to dielectric breakdown the red blood cells lose hemoglobin completely. This phenomenon was used to study dielectric breakdown of red blood cells in a homogeneous electric field between two flat platinum electrodes. The electric field was applied by discharging a high voltage storage capacitor via a spark gap. The calculated value of the membrane potential generated to produce dielectric breakdown in the homogeneous field is of the same order as found by means of the Coulter Counter. This indicates that mechanical rupture of the red blood cells by the hydrodynamic forces in the orifice of the Coulter Counter could also be excluded as a hemolysing mechanism. The detector

  13. The Center Symmetry and its Spontaneous Breakdown at High Temperatures

    NASA Astrophysics Data System (ADS)

    Holland, Kieran; Wiese, Uwe-Jens

    The Euclidean action of non-Abelian gauge theories with adjoint dynamical charges (gluons or gluinos) at non-zero temperature T is invariant against topologically non-trivial gauge transformations in the Z(N)c center of the SU(N) gauge group. The Polyakov loop measures the free energy of fundamental static charges (infinitely heavy test quarks) and is an order parameter for the spontaneous break-down of the center symmetry. In SU(N) Yang-Mills theory the Z(N)c symmetry is unbroken in the low-temperature confined phase and spontaneously broken in the high-temperature deconfined phase. In 4-dimensional SU(2) Yang-Mills theory the deconfinement phase transition is of second order and is in the universality class of the 3-dimensional Ising model. In the SU(3) theory, on the other hand, the transition is first order and its bulk physics is not universal. When a chemical potential μ is used to generate a non-zero baryon density of test quarks, the first order deconfinement transition line extends into the (μ, T)-plane. It terminates at a critical endpoint which also is in the universality class of the 3-dimensional Ising model. At a first order phase transition the confined and deconfined phases coexist and are separated by confined-deconfined interfaces. Similarly, the three distinct high-temperature phases of SU(3) Yang-Mills theory are separated by deconfined-deconfined domain walls. As one approaches the deconfinement phase transition from the high-temperature side, a deconfined-deconfined domain wall splits into a pair of confined-deconfined interfaces and becomes completely wet by the confined phase. Complete wetting is a universal interface phenomenon that arises despite the fact that the bulk physics is non-universal. In supersymmetric SU(3) Yang-Mills theory, a Z(3)χ chiral symmetry is spontaneously broken in the confined phase and restored in the deconfined phase. As one approaches the deconfinement phase transition from the low-temperature side, a confined

  14. A Double-Pole High Voltage High Current Switch

    DTIC Science & Technology

    2005-12-01

    NAVAL POSTGRADUATE SCHOOL MONTEREY, CALIFORNIA THESIS Approved for public release; distribution is unlimited A DOUBLE- POLE HIGH...December 2005 3. REPORT TYPE AND DATES COVERED Master’s Thesis 4. TITLE AND SUBTITLE: A Double- Pole High Voltage High Current Switch 6. AUTHOR(S...to divert heavy charged particles, e.g. Cu+. 15. NUMBER OF PAGES 68 14. SUBJECT TERMS Double- Pole , Pulse Forming Inductive Network, PFIN

  15. High Voltage Application of Explosively Formed Fuses

    SciTech Connect

    Tasker, D.G.; Goforth, J.H.; Fowler, C.M.; Lopez, E.M.; Oona, H.; Marsh, S.P.; King, J.C.; Herrera, D.H.; Torres, D.T.; Sena, F.C.; Martinez, E.C.; Reinovsky, R.E.; Stokes, J.L.; Tabaka, L.J.; Kiuttu, G.; Degnan, J.

    1998-10-18

    At Los Alamos, the authors have primarily applied Explosively Formed Fuse (EFF) techniques to high current systems. In these systems, the EFF has interrupted currents from 19 to 25 MA, thus diverting the current to low inductance loads. The magnitude of transferred current is determined by the ratio of storage inductance to load inductance, and with dynamic loads, the current has ranged from 12 to 20 MA. In a system with 18 MJ stored energy, the switch operates at a power up to 6 TW. The authors are now investigating the use of the EFF technique to apply high voltages to high impedance loads in systems that are more compact. In these systems, they are exploring circuits with EFF lengths from 43 to 100 cm, which have storage inductances large enough to apply 300 to 500 kV across high impedance loads. Experimental results and design considerations are presented. Using cylindrical EFF switches of 10 cm diameter and 43 cm length, currents of approximately 3 MA were interrupted producing {approximately}200 kV. This indicate s the switch had an effective resistance of {approximately}100 m{Omega} where 150--200 m{Omega} was expected. To understand the lower performance, several parameters were studied, including: electrical conduction through the explosive products; current density; explosive initiation; insulator type; conductor thickness; and so on. The results show a number of interesting features, most notably that the primary mechanism of switch operation is mechanical and not electrical fusing of the conductor. Switches opening on a 10 to 10 {micro}s time scale with resistances starting at 50 {micro}{Omega} and increasing to perhaps 1 {Omega} now seem possible to construct, using explosive charges as small as a few pounds.

  16. High Voltage Applications of Explosively Formed Fuses

    NASA Astrophysics Data System (ADS)

    Tasker, D. G.; Goforth, J. H.; Fowler, C. M.; Herrera, D. H.; King, J. C.; Lopez, E. A.; Martinez, E. C.; Oona, H.; Marsh, S. P.; Reinovsky, R. E.; Stokes, J.; Tabaka, L. J.; Torres, D. T.; Sena, F. C.; Kiuttu, G.; Degnan, J.

    2004-11-01

    At Los Alamos, we have primarily applied Explosively Formed Fuse (EFF) techniques to high current systems. In these systems, the EFF has interrupted currents from 19-25 MA, thus diverting the current to low inductance loads. The transferred current magnitude is determined by the ratio of storage inductance to load inductance and, with dynamic loads, the current has ranged from 12-20 MA. In a system with 18 MJ stored energy, the switch operates at a power of up to 6 TW. We are now investigating the use of the EFF technique to apply high voltages to high impedance loads in systems that are more compact. In these systems we are exploring circuits with EFF lengths from 43-100 cm, which have storage inductances large enough to apply 300-500 kV across high impedance loads. Experimental results and design considerations are presented. Using cylindrical EFF switches of 10 cm diameter and 43 cm length, currents of approximately 3 MA were interrupted producing ~200 kV. This indicates the switch had an effective resistance of ~100 mΩ where 150-200 mΩ was expected. To understand the lower performance, several parameters were studied including electrical conduction through the explosive products; current density; explosive initiation; insulator type and conductor thickness. The results show a number of interesting features, most notably that the primary mechanism of switch operation is mechanical and not electrical fusing of the conductor. Switches opening on a 1-10 μs time scale with resistances starting at 50 μΩ and increasing to perhaps 1 Ω now seem possible to construct using explosive charges as small as a few pounds.

  17. High-Voltage LED Light Engine with Integrated Driver

    SciTech Connect

    Soer, Wouter

    2016-02-29

    LED luminaires have seen dramatic changes in cost breakdown over the past few years. The LED component cost, which until recently was the dominant portion of luminaire cost, has fallen to a level of the same order as the other luminaire components, such as the driver, housing, optics etc. With the current state of the technology, further luminaire performance improvement and cost reduction is realized most effectively by optimization of the whole system, rather than a single component. This project focuses on improving the integration between LEDs and drivers. Lumileds has developed a light engine platform based on low-cost high-power LEDs and driver topologies optimized for integration with these LEDs on a single substrate. The integration of driver and LEDs enables an estimated luminaire cost reduction of about 25% for targeted applications, mostly due to significant reductions in driver and housing cost. The high-power LEDs are based on Lumileds’ patterned sapphire substrate flip-chip (PSS-FC) technology, affording reduced die fabrication and packaging cost compared to existing technology. Two general versions of PSS-FC die were developed in order to create the desired voltage and flux increments for driver integration: (i) small single-junction die (0.5 mm2), optimal for distributed lighting applications, and (ii) larger multi-junction die (2 mm2 and 4 mm2) for high-power directional applications. Two driver topologies were developed: a tapped linear driver topology and a single-stage switch-mode topology, taking advantage of the flexible voltage configurations of the new PSS-FC die and the simplification opportunities enabled by integration of LEDs and driver on the same board. A prototype light engine was developed for an outdoor “core module” application based on the multi-junction PSS-FC die and the single-stage switch-mode driver. The light engine meets the project efficacy target of 128 lm/W at a luminous flux

  18. Improving breakdown voltage and self-heating effect for SiC LDMOS with double L-shaped buried oxide layers

    NASA Astrophysics Data System (ADS)

    Bao, Meng-tian; Wang, Ying

    2017-02-01

    In this paper, a SiC LDMOS with double L-shaped buried oxide layers (DL-SiC LDMOS) is investigated and simulated. The DL-SiC LDMOS consists of two L-shaped buried oxide layers and two SiC windows. Using 2-D numerical simulation software, Atlas, Silvaco TCAD, the breakdown voltage, and the self-heating effect are discussed. The double-L shaped buried oxide layers and SiC windows in the active area can introduce an additional electric field peak and make the electric field distribution more uniform in the drift region. In addition, the SiC windows, which connect the active area to the substrate, can facilitate heat dissipation and reduce the maximum lattice temperature of the device. Compared with the BODS structure, the DL-SiC LDMOS and BODS structures have the same device parameters, except of the buried oxide layers. The simulation results of DL-SiC LDMOS exhibits outstanding characteristics including an increase of the breakdown voltage by 32.6% to 1220 V, and a low maximum lattice temperature (535 K) at room temperature.

  19. Field of High Voltage Engineering at Graz University of Technology

    NASA Astrophysics Data System (ADS)

    Pack, Stephan

    High Voltage Engineering is an important task at the Graz University of Technology since the early 1970s. Additional importance was given by the national decission, to offer this university and research activities for Austria in Graz only. Therfore this paper reports—based on the history—the actual situation of university education and research activities in the field of high voltage engineering and gives impressions on high voltage (HV) and extra high voltage (EHV) test facilities and test examples at the accredited laboratory of this university.

  20. A high-voltage test for the ATLAS RPC qualification

    NASA Astrophysics Data System (ADS)

    Aielli, G.; Camarri, P.; Cardarelli, R.; Di Ciaccio, A.; Di Simone, A.; Liberti, B.; Santonico, R.

    2004-11-01

    The RPC production sequence for the ATLAS experiment includes a specific test of current absorption at the operating point, which concerns the RPC "gas volumes", namely the bare detectors not yet assembled with the read-out panels and the mechanical support structures. The test, which is carried out at the production site, consists of two phases. The gas volumes are initially conditioned with pure argon, keeping the voltage constant just above the breakdown value of about 2 kV. The final test, performed after the volumes have undergone inner surface varnishing with linseed oil, is based on the measurement of the current-voltage characteristics with the binary operating gas, C2H2F4 / i-C4H10 = 95 / 5. The results presented here concern 45% of the total foreseen production.

  1. SECONDARY ELECTRON TRAJECTORIES IN HIGH-GRADIENT VACUUM INSULATORS WITH FAST HIGH-VOLTAGE PULSES

    SciTech Connect

    Chen, Y; Blackfield, D; Nelson, S D; Poole, B

    2010-04-21

    Vacuum insulators composed of alternating layers of metal and dielectric, known as high-gradient insulators (HGIs), have been shown to withstand higher electric fields than conventional insulators. Primary or secondary electrons (emitted from the insulator surface) can be deflected by magnetic fields from external sources, the high-current electron beam, the conduction current in the transmission line, or the displacement current in the insulator. These electrons are deflected either toward or away from the insulator surface and this affects the performance of the vacuum insulator. This paper shows the effects of displacement current from short voltage pulses on the performance of high gradient insulators. Generally, vacuum insulator failure is due to surface flashover, initiated by electrons emitted from a triple junction. These electrons strike the insulator surface thus producing secondary electrons, and can lead to a subsequent electron cascade along the surface. The displacement current in the insulator can deflect electrons either toward or away from the insulator surface, and affects the performance of the vacuum insulator when the insulator is subjected to a fast high-voltage pulse. Vacuum insulators composed of alternating layers of metal and dielectric, known as high-gradient insulators (HGIs), have been shown to withstand higher electric fields than conventional insulators. HGIs, being tolerant of the direct view of high-current electron and ion beams, and having desirable RF properties for accelerators, are a key enabling technology for the dielectric-wall accelerators (DWA) being developed at Lawrence Livermore National Laboratory (LLNL). Characteristically, insulator surface breakdown thresholds go up as the applied voltage pulse width decreases. To attain the highest accelerating gradient in the DWA, short accelerating voltage pulses are only applied locally, along the HGI accelerator tube, in sync with the charged particle bunch, and the effects of

  2. High-Voltage, High-Power Gaseous Electronics Switch For Electric Grid Power Conversion

    NASA Astrophysics Data System (ADS)

    Sommerer, Timothy J.

    2014-05-01

    We are developing a high-voltage, high-power gas switch for use in low-cost power conversion terminals on the electric power grid. Direct-current (dc) power transmission has many advantages over alternating current (ac) transmission, but at present the high cost of ac-dc power interconversion limits the use of dc. The gas switch we are developing conducts current through a magnetized cold cathode plasma in hydrogen or helium to reach practical current densities > 1 A/cm2. Thermal and sputter damage of the cathode by the incident ion flux is a major technical risk, and is being addressed through use of a ``self-healing'' liquid metal cathode (eg, gallium). Plasma conditions and cathode sputtering loss are estimated by analyzing plasma spectral emission. A particle-in-cell plasma model is used to understand various aspects of switch operation, including the conduction phase (where plasma densities can exceed 1013 cm-3), the switch-open phase (where the high-voltage must be held against gas breakdown on the left side of Paschen's curve), and the switching transitions (especially the opening process, which is initiated by forming an ion-matrix sheath adjacent to a control grid). The information, data, or work presented herein was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000298.

  3. Solid electrolyte: The key for high-voltage lithium batteries

    SciTech Connect

    Li, Juchuan; Ma, Cheng; Chi, Miaofang; Liang, Chengdu; Dudney, Nancy J.

    2014-10-14

    A solid-state high-voltage (5 V) lithium battery is demonstrated to deliver a cycle life of 10 000 with 90% capacity retention. Furthermore, the solid electrolyte enables the use of high-voltage cathodes and Li anodes with minimum side reactions, leading to a high Coulombic efficiency of 99.98+%.

  4. Plasma collection by high voltage spacecraft at low earth orbit

    NASA Technical Reports Server (NTRS)

    Katz, I.; Mandell, M. J.; Schnuelle, G. W.; Parks, D. E.; Steen, P. G.

    1980-01-01

    A computer model of the three-dimensional sheath formation and plasma current collection by high voltage spacecraft has been developed. By using new space charge density and plasma collection algorithms, it is practical to perform calculations for large, complex spacecraft. The model uses NASCAP compatible objects and geometries. Results indicate that ion focusing observed in the laboratory during high voltage collection experiments is probably due to voltage gradients on the collecting surfaces.

  5. High-Voltage Digital-To-Analog Converter

    NASA Technical Reports Server (NTRS)

    Huston, Steven W.

    1990-01-01

    High-voltage 10-bit digital-to-analog converter operates under computer control to put out voltages up to 500 V at currents up to 35 mA. Circuit includes high-voltage power supply used to generate high-voltage square wave at frequency set by computer at value between 0.2 Hz and 10 Hz. Used to drive 0.02-microfarad, 1-kV capacitor at slewing rate of 1 V/microsecond to provide signal for robotic imaging system.

  6. High-voltage solar-cell chip

    NASA Technical Reports Server (NTRS)

    Kapoor, V. J.; Valco, G. J.; Skebe, G. G.; Evans, J. C., Jr.

    1985-01-01

    Integrated circuit technology has been successfully applied to the design and fabrication of 0.5 x 0.5-cm planar multijunction solar-cell chips. Each of these solar cells consisted of six voltage-generating unit cells monolithically connected in series and fabricated on a 75-micron-thick, p-type, single crystal, silicon substrate. A contact photolithic process employing five photomask levels together with a standard microelectronics batch-processing technique were used to construct the solar-cell chip. The open-circuit voltage increased rapidly with increasing illumination up to 5 AM1 suns where it began to saturate at the sum of the individual unit-cell voltages at a maximum of 3.0 V. A short-circuit current density per unit cell of 240 mA/sq cm was observed at 10 AM1 suns.

  7. Electrokinetic ion breakdown in a nanochannel

    NASA Astrophysics Data System (ADS)

    Wang, Jun-yao; Xu, Zheng

    2016-07-01

    In this paper, the electrokinetic ion breakdown in a nanochannel is investigated. The Poisson-Nernst-Planck equations are employed to simulate the influence of the voltage on the concentration. Both theoretical research and experiments show that increasing the voltage can promote the ion concentration, but high voltage will break up the repulsion effect of the electric double layer and bring the concentration down. For a given micro-nanochannel, the ion concentration has a peak value corresponding with a peak voltage. Narrowing the width of a nanochannel improves the peak voltage and the peak concentration. The results will be beneficial to research the internal discipline of electrokinetic concentration.

  8. Electric field and space charge distribution measurement in transformer oil struck by impulsive high voltage

    NASA Astrophysics Data System (ADS)

    Sima, Wenxia; Guo, Hongda; Yang, Qing; Song, He; Yang, Ming; Yu, Fei

    2015-08-01

    Transformer oil is widely used in power systems because of its excellent insulation properties. The accurate measurement of electric field and space charge distribution in transformer oil under high voltage impulse has important theoretical and practical significance, but still remains challenging to date because of its low Kerr constant. In this study, the continuous electric field and space charge distribution over time between parallel-plate electrodes in high-voltage pulsed transformer oil based on the Kerr effect is directly measured using a linear array photoelectrical detector. Experimental results demonstrate the applicability and reliability of this method. This study provides a feasible approach to further study the space charge effects and breakdown mechanisms in transformer oil.

  9. From organized high throughput data to phenomenological theory: The example of dielectric breakdown

    NASA Astrophysics Data System (ADS)

    Kim, Chiho; Pilania, Ghanshyam; Ramprasad, Rampi

    Understanding the behavior (and failure) of dielectric insulators experiencing extreme electric fields is critical to the operation of present and emerging electrical and electronic devices. Despite its importance, the development of a predictive theory of dielectric breakdown has remained a challenge, owing to the complex multiscale nature of this process. Here, we focus on the intrinsic dielectric breakdown field of insulators--the theoretical limit of breakdown determined purely by the chemistry of the material, i.e., the elements the material is composed of, the atomic-level structure, and the bonding. Starting from a benchmark dataset (generated from laborious first principles computations) of the intrinsic dielectric breakdown field of a variety of model insulators, simple predictive phenomenological models of dielectric breakdown are distilled using advanced statistical or machine learning schemes, revealing key correlations and analytical relationships between the breakdown field and easily accessible material properties. The models are shown to be general, and can hence guide the screening and systematic identification of high electric field tolerant materials.

  10. Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

    NASA Technical Reports Server (NTRS)

    Adell, Philippe C.; Mojarradi, Mohammad; DelCastillo, Linda Y.; Vo, Tuan A.

    2011-01-01

    A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

  11. Surface voltage gradient role in high voltage solar array-plasma interaction: Center Director's discretionary fund

    NASA Technical Reports Server (NTRS)

    Carruth, M. R., Jr.

    1985-01-01

    A large amount of experimental and analytical effort has been directed toward understanding the plasma sheath growth and discharge phenomena which lead to high voltage solar array-space plasma interactions. An important question which has not been addressed is how the surface voltage gradient on such an array may affect these interactions. The results of this study indicate that under certain conditions, the voltage gradient should be taken into account when evaluating the effect on a solar array operating in a plasma environment.

  12. High voltage high brightness electron accelerator with MITL voltage adder coupled to foilless diode

    SciTech Connect

    Mazarakis, M.G.; Poulkey, J.W.; Rovang, D.

    1995-12-31

    The design and analysis of a high brightness electron beam experiment under construction at Sandia National Laboratory is presented. The beam energy is 12 MeV, the current 35-40 kA, the rms radius 0.5 mm, and the pulse duration FWHM 40 ns. The accelerator is SABRE a pulsed inductive voltage adder, and the electron source is a magnetically immersed foilless diode. This experiment has as its goal to stretch the technology to the edge and produce the highest possible electron current in a submillimeter radius beam.

  13. Mechanism of formation of subnanosecond current front in high-voltage pulse open discharge

    NASA Astrophysics Data System (ADS)

    Schweigert, I. V.; Alexandrov, A. L.; Zakrevsky, Dm. E.; Bokhan, P. A.

    2014-11-01

    The mechanism of subnanosecond current front rise observed previously in the experiment in high-voltage pulse open discharge in helium is studied in kinetic particle-in-cell simulations. The Boltzmann equations for electrons, ions, and fast atoms are solved self-consistently with the Poisson equations for the electrical potential. The partial contributions to the secondary electron emission from the ions, fast atoms, photons, and electrons, bombarding the electrode, are calculated. In simulations, as in the experiment, the discharge glows between two symmetrical cathodes and the anode grid in the midplane at P =6 Torr and the applied voltage of 20 kV. The electron avalanche development is considered for two experimental situations during the last stage of breakdown: (i) with constant voltage and (ii) with decreasing voltage. For case (i), the subnanosecond current front rise is set by photons from the collisional excitation transfer reactions. For the case (ii), the energetic electrons swamp the cathode during voltage drop and provide the secondary electron emission for the subnanosecond current rise, observed in the experiment.

  14. A Comparison of High-Voltage Switches

    SciTech Connect

    Chu, K.W.; Scott, G.L.

    1999-02-01

    This report summarizes our work on high-voltage switches during the past few years. With joint funding from the Department of Energy (DOE) and the Department of Defense (DOD), we tested a wide variety of switches to a common standard. This approach permitted meaningful comparisons between disparate switches. Most switches were purchased from commercial sources, though some were experimental devices. For the purposes of this report, we divided the switches into three generic types (gas, vacuum, and semiconductor) and selected data that best illustrates important strengths and weaknesses of each switch type. Test techniques that indicate the state of health of the switches are emphasized. For example, a good indicator of residual gas in a vacuum switch is the systematic variation of the switching delay in response to changes in temperature and/or operating conditions. We believe that the presentation of this kind of information will help engineers to select and to test switches for their particular applications. Our work was limited to switches capable of driving slappers. Also known as exploding-foil initiators, slappers are detonators that initiate a secondary explosive by direct impact with a small piece of matter moving at the detonation velocity (several thousands of meters per second). A slapper is desirable for enhanced safety (no primary explosive), but it also places extra demands on the capacitor-discharge circuit to deliver a fast-rising current pulse (greater than 10 A/ns) of several thousand amperes. The required energy is substantially less than one joule; but this energy is delivered in less than one microsecond, taking the peak power into the megawatt regime. In our study, the switches operated in the 1 kV to 3 kV range and were physically small, roughly 1 cm{sup 3} or less. Although a fuze functions only once in actual use, multiple-shot capability is important for production testing and for research work. For this reason, we restricted this report

  15. Reliability of High-Voltage Tantalum Capacitors. Parts 3 and 4)

    NASA Technical Reports Server (NTRS)

    Teverovsky, Alexander

    2010-01-01

    Weibull grading test is a powerful technique that allows selection and reliability rating of solid tantalum capacitors for military and space applications. However, inaccuracies in the existing method and non-adequate acceleration factors can result in significant, up to three orders of magnitude, errors in the calculated failure rate of capacitors. This paper analyzes deficiencies of the existing technique and recommends more accurate method of calculations. A physical model presenting failures of tantalum capacitors as time-dependent-dielectric-breakdown is used to determine voltage and temperature acceleration factors and select adequate Weibull grading test conditions. This model is verified by highly accelerated life testing (HALT) at different temperature and voltage conditions for three types of solid chip tantalum capacitors. It is shown that parameters of the model and acceleration factors can be calculated using a general log-linear relationship for the characteristic life with two stress levels.

  16. A high voltage pulsed power supply for capillary discharge waveguide applications

    SciTech Connect

    Abuazoum, S.; Wiggins, S. M.; Issac, R. C.; Welsh, G. H.; Vieux, G.; Jaroszynski, D. A.; Ganciu, M.

    2011-06-15

    We present an all solid-state, high voltage pulsed power supply for inducing stable plasma formation (density {approx}10{sup 18} cm{sup -3}) in gas-filled capillary discharge waveguides. The pulser (pulse duration of 1 {mu}s) is based on transistor switching and wound transmission line transformer technology. For a capillary of length 40 mm and diameter 265 {mu}m and gas backing pressure of 100 mbar, a fast voltage pulse risetime of 95 ns initiates breakdown at 13 kV along the capillary. A peak current of {approx}280 A indicates near complete ionization, and the r.m.s. temporal jitter in the current pulse is only 4 ns. Temporally stable plasma formation is crucial for deploying capillary waveguides as plasma channels in laser-plasma interaction experiments, such as the laser wakefield accelerator.

  17. Electrical system architecture having high voltage bus

    DOEpatents

    Hoff, Brian Douglas [East Peoria, IL; Akasam, Sivaprasad [Peoria, IL

    2011-03-22

    An electrical system architecture is disclosed. The architecture has a power source configured to generate a first power, and a first bus configured to receive the first power from the power source. The architecture also has a converter configured to receive the first power from the first bus and convert the first power to a second power, wherein a voltage of the second power is greater than a voltage of the first power, and a second bus configured to receive the second power from the converter. The architecture further has a power storage device configured to receive the second power from the second bus and deliver the second power to the second bus, a propulsion motor configured to receive the second power from the second bus, and an accessory motor configured to receive the second power from the second bus.

  18. Living and Working Safely Around High-Voltage Power Lines.

    SciTech Connect

    United States. Bonneville Power Administration.

    2001-06-01

    High-voltage transmission lines can be just as safe as the electrical wiring in the homes--or just as dangerous. The crucial factor is ourselves: they must learn to behave safely around them. This booklet is a basic safety guide for those who live and work around power lines. It deals primarily with nuisance shocks due to induced voltages, and with potential electric shock hazards from contact with high-voltage lines. References on possible long-term biological effects of transmission lines are shown. In preparing this booklet, the Bonneville Power Administration has drawn on more than 50 years of experience with high-voltage transmission. BPA operates one of the world`s largest networks of long-distance, high-voltage lines. This system has more than 400 substations and about 15,000 miles of transmission lines, almost 4,400 miles of which are operated at 500,000 volts.

  19. Planar LTCC transformers for high voltage flyback converters.

    SciTech Connect

    Schofield, Daryl; Schare, Joshua M.; Glass, Sarah Jill; Roesler, Alexander William; Ewsuk, Kevin Gregory; Slama, George; Abel, Dave

    2007-06-01

    This paper discusses the design and use of low-temperature (850 C to 950 C) co-fired ceramic (LTCC) planar magnetic flyback transformers for applications that require conversion of a low voltage to high voltage (> 100V) with significant volumetric constraints. Measured performance and modeling results for multiple designs showed that the LTCC flyback transformer design and construction imposes serious limitations on the achievable coupling and significantly impacts the transformer performance and output voltage. This paper discusses the impact of various design factors that can provide improved performance by increasing transformer coupling and output voltage. The experiments performed on prototype units demonstrated LTCC transformer designs capable of greater than 2 kV output. Finally, the work investigated the effect of the LTCC microstructure on transformer insulation. Although this paper focuses on generating voltages in the kV range, the experimental characterization and discussion presented in this work applies to designs requiring lower voltage.

  20. High-voltage air-core pulse transformers

    SciTech Connect

    Rohwein, G.J.

    1981-08-01

    High voltage air core pulse transformers are best suited to applications outside the normal ranges of conventional magnetic core transformers. In general these include charge transfer at high power levels and fast pulse generation with comparatively low energy. When properly designed and constructed, they are capable of delivering high energy transfer efficiency and have demonstrated superior high voltage endurance. The general types designed for high voltage pulse generation and energy transfer applications are described. Special emphasis is given to pulse charging systems which operate up to the multi-megavolt range. (WHK)

  1. Bipolar high-repetition-rate high-voltage nanosecond pulser

    SciTech Connect

    Tian Fuqiang; Wang Yi; Shi Hongsheng; Lei Qingquan

    2008-06-15

    The pulser designed is mainly used for producing corona plasma in waste water treatment system. Also its application in study of dielectric electrical properties will be discussed. The pulser consists of a variable dc power source for high-voltage supply, two graded capacitors for energy storage, and the rotating spark gap switch. The key part is the multielectrode rotating spark gap switch (MER-SGS), which can ensure wider range modulation of pulse repetition rate, longer pulse width, shorter pulse rise time, remarkable electrical field distortion, and greatly favors recovery of the gap insulation strength, insulation design, the life of the switch, etc. The voltage of the output pulses switched by the MER-SGS is in the order of 3-50 kV with pulse rise time of less than 10 ns and pulse repetition rate of 1-3 kHz. An energy of 1.25-125 J per pulse and an average power of up to 10-50 kW are attainable. The highest pulse repetition rate is determined by the driver motor revolution and the electrode number of MER-SGS. Even higher voltage and energy can be switched by adjusting the gas pressure or employing N{sub 2} as the insulation gas or enlarging the size of MER-SGS to guarantee enough insulation level.

  2. Bipolar high-repetition-rate high-voltage nanosecond pulser.

    PubMed

    Tian, Fuqiang; Wang, Yi; Shi, Hongsheng; Lei, Qingquan

    2008-06-01

    The pulser designed is mainly used for producing corona plasma in waste water treatment system. Also its application in study of dielectric electrical properties will be discussed. The pulser consists of a variable dc power source for high-voltage supply, two graded capacitors for energy storage, and the rotating spark gap switch. The key part is the multielectrode rotating spark gap switch (MER-SGS), which can ensure wider range modulation of pulse repetition rate, longer pulse width, shorter pulse rise time, remarkable electrical field distortion, and greatly favors recovery of the gap insulation strength, insulation design, the life of the switch, etc. The voltage of the output pulses switched by the MER-SGS is in the order of 3-50 kV with pulse rise time of less than 10 ns and pulse repetition rate of 1-3 kHz. An energy of 1.25-125 J per pulse and an average power of up to 10-50 kW are attainable. The highest pulse repetition rate is determined by the driver motor revolution and the electrode number of MER-SGS. Even higher voltage and energy can be switched by adjusting the gas pressure or employing N(2) as the insulation gas or enlarging the size of MER-SGS to guarantee enough insulation level.

  3. E-beam high voltage switching power supply

    DOEpatents

    Shimer, Daniel W.; Lange, Arnold C.

    1996-01-01

    A high-power power supply produces a controllable, constant high voltage put under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  4. E-beam high voltage switching power supply

    DOEpatents

    Shimer, D.W.; Lange, A.C.

    1996-10-15

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 figs.

  5. COTS Li-Ion Cells in High Voltage Batteries

    NASA Technical Reports Server (NTRS)

    Davies, Francis; Darcy, Eric; Jeevarajan, Judy; Cowles, Phil

    2003-01-01

    Testing at NASA JSC and COMDEV shows that Commercial Off the Shelf (COTS) Li Ion cells can not be used in high voltage batteries safely without considering the voltage stresses that may be put on the protective devices in them during failure modes.

  6. Optically triggered high voltage switch network and method for switching a high voltage

    DOEpatents

    El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  7. Single and repetitive short-pulse high-power microwave window breakdown

    SciTech Connect

    Chang, C.; Tang, C. X.; Shao, H.; Chen, C. H.; Huang, W. H.

    2010-05-15

    The mechanisms of high-power microwave breakdown for single and repetitive short pulses are analyzed. By calculation, multipactor saturation with electron density much higher than the critical plasma density is found not to result in microwave cutoff. It is local high pressure about Torr class that rapid plasma avalanche and final breakdown are realized in a 10-20 ns short pulse. It is found by calculation that the power deposited by saturated multipactor and the rf loss of protrusions are sufficient to induce vaporizing surface material and enhancing the ambient pressure in a single short pulse. For repetitive pulses, the accumulation of heat and plasma may respectively carbonize the surface material and lower the repetitive breakdown threshold.

  8. Determination of threshold and maximum operating electric stresses for selected high voltage insulations. Task III. Investigation of high voltage capacitor insulation. Progress report No. 4

    SciTech Connect

    Sosnowski, M.; Eager, G.S. Jr.

    1984-03-01

    This report covers the investigation of threshold voltage of capacitor insulation. The experimental work was performed on samples prepared from commercial polypropylene insulated, liquid-filled capacitors. The samples were vacuum-impregnated with the original capacitor insulating liquid obtained from the manufacturer. A limited number of full-size capacitor elements also were tested. Impulse voltage breakdown tests with dc voltage prestressing were performed at room temperature and 75/sup 0/C. From the results of these tests, the threshold voltage of the samples of the capacitor insulation was determined at both temperatures and that of the whole capacitor elements at room temperature. The threshold voltage of the capacitor insulation was found to be approximately equal to the impulse breakdown voltage. No difference was found between the threshold voltage at room temperature and at 75/sup 0/C. The threshold voltage of the whole capacitor elements at room temperature was found to be equal to approximately 80% of the threshold voltage of the capacitor insulation samples.

  9. Physicochemical assessment criteria for high-voltage pulse capacitors

    SciTech Connect

    Darian, L. A. Lam, L. Kh.

    2016-12-15

    In the paper, the applicability of decomposition products of internal insulation of high-voltage pulse capacitors is considered (aging is the reason for decomposition products of internal insulation). Decomposition products of internal insulation of high-voltage pulse capacitors can be used to evaluate their quality when in operation and in service. There have been three generations of markers of aging of insulation as in the case with power transformers. The area of applicability of markers of aging of insulation for power transformers has been studied and the area can be extended to high-voltage pulse capacitors. The research reveals that there is a correlation between the components and quantities of markers of aging of the first generation (gaseous decomposition products of insulation) dissolved in insulating liquid and the remaining life of high-voltage pulse capacitors. The application of markers of aging to evaluate the remaining service life of high-voltage pulse capacitor is a promising direction of research, because the design of high-voltage pulse capacitors keeps stability of markers of aging of insulation in high-voltage pulse capacitors. It is necessary to continue gathering statistical data concerning development of markers of aging of the first generation. One should also carry out research aimed at estimation of the remaining life of capacitors using markers of the second and the third generation.

  10. Physicochemical assessment criteria for high-voltage pulse capacitors

    NASA Astrophysics Data System (ADS)

    Darian, L. A.; Lam, L. Kh.

    2016-12-01

    In the paper, the applicability of decomposition products of internal insulation of high-voltage pulse capacitors is considered (aging is the reason for decomposition products of internal insulation). Decomposition products of internal insulation of high-voltage pulse capacitors can be used to evaluate their quality when in operation and in service. There have been three generations of markers of aging of insulation as in the case with power transformers. The area of applicability of markers of aging of insulation for power transformers has been studied and the area can be extended to high-voltage pulse capacitors. The research reveals that there is a correlation between the components and quantities of markers of aging of the first generation (gaseous decomposition products of insulation) dissolved in insulating liquid and the remaining life of high-voltage pulse capacitors. The application of markers of aging to evaluate the remaining service life of high-voltage pulse capacitor is a promising direction of research, because the design of high-voltage pulse capacitors keeps stability of markers of aging of insulation in high-voltage pulse capacitors. It is necessary to continue gathering statistical data concerning development of markers of aging of the first generation. One should also carry out research aimed at estimation of the remaining life of capacitors using markers of the second and the third generation.

  11. High-voltage air-core pulse transformers

    SciTech Connect

    Rohwein, G. J.

    1981-01-01

    General types of air core pulse transformers designed for high voltage pulse generation and energy transfer applications are discussed with special emphasis on pulse charging systems which operate up to the multi-megavolt range. The design, operation, dielectric materials, and performance are described. It is concluded that high voltage air core pulse transformers are best suited to applications outside the normal ranges of conventional magnetic core transformers. In general these include charge transfer at high power levels and fast pulse generation with comparatively low energy. When properly designed and constructed, they are capable of delivering high energy transfer efficiency and have demonstrated superior high voltage endurance. The principal disadvantage of high voltage air core transformers is that they are not generally available from commercial sources. Consequently, the potential user must become thoroughly familiar with all aspects of design, fabrication and system application before he can produce a high performance transformer system. (LCL)

  12. Time-Domain Finite Element Analysis of Nonlinear Breakdown Problems in High-Power-Microwave Devices and Systems

    DTIC Science & Technology

    2015-12-24

    simulation of the electromagnetic- plasma interaction and the high-power microwave breakdown in air. Under the high pressure and high frequency condition of...the high-power air breakdown, the physical phenomenon is described using a nonlinearly coupled full-wave Maxwell and fluid plasma system. This...Challenges ........................................................................... 3 3.1.1 Plasma Fluid Model

  13. High-voltage pulsed generators for electro-discharge technologies

    NASA Astrophysics Data System (ADS)

    Kovalchuk, B. M.; Kharlov, A. V.; Kumpyak, E. V.; Sinebrykhov, V. A.

    2013-09-01

    A high-voltage pulse technology is one of effective techniques for the disintegration and milling of rocks, separation of ores and synthesized materials, recycling of building and elastoplastic materials. We present here the design and test results of two portable HV pulsed generators, designed for materials fragmentation, though some other technological applications are possible as well. Generator #1 consists of low voltage block, high voltage transformer, high voltage capacitive storage block, two electrode gas switch, fragmentation chamber and control system block. Technical characteristics of the #1 generator: stored energy in HV capacitors can be varied from 50 to 1000 J, output voltage up to 300 kV, voltage rise time ~ 50 ns, typical operation regime 1000 pulses bursts with a repetitive rate up to 10 Hz. Generator #2 is made on an eight stages Marx scheme with two capacitors (100 kV-400 nF) per stage, connected in parallel. Two electrode spark gap switches, operated in atmospheric air, are used in the Marx generator. Parameters of the generator: stored energy in capacitors 2÷8 kJ, amplitude of the output voltage 200÷400 kV, voltage rise time on a load 50÷100 ns, repetitive rate up to 0.5 Hz. The fragmentation process can be controlled within a wide range of parameters for both generators.

  14. High voltage high repetition rate pulse using Marx topology

    NASA Astrophysics Data System (ADS)

    Hakki, A.; Kashapov, N.

    2015-06-01

    The paper describes Marx topology using MOSFET transistors. Marx circuit with 10 stages has been done, to obtain pulses about 5.5KV amplitude, and the width of the pulses was about 30μsec with a high repetition rate (PPS > 100), Vdc = 535VDC is the input voltage for supplying the Marx circuit. Two Ferrite ring core transformers were used to control the MOSFET transistors of the Marx circuit (the first transformer to control the charging MOSFET transistors, the second transformer to control the discharging MOSFET transistors).

  15. Post-breakdown stages in transformer oil

    NASA Astrophysics Data System (ADS)

    Kúdelčík, Jozef; Varačka, Lukáš; Jahoda, Emil; Poljak, Silvester

    2017-05-01

    The external pressure influences significantly on the electric strength of liquid dielectrics. Quantitative explanation of this experimental fact is one of the main evidences for the bubble breakdown theory. The measurements of negative dc breakdown voltage were made in transformer oil ITO 100 for various external pressures and the developments of post-breakdown stages were recorded by high-speed camera. The initiation of breakdown was characterized by the growth of narrow streamers the creation of which was attributed to field injected electrons at local asperities of the cathode surface. Once the streamers reached the anode, large currents were found to flow through the gap leading to formation of a plasma channel. Post-breakdown stage in transformer oil consisted of vapour channel between the electrodes. This channel was created during breakdown and it expanded into space and then contracted. Time development of its length and diameter from records of high-speed camera were determined. The times of expansion and collapse were dependent on the breakdown voltage and the external pressures. These parameters decreased with the increase of the external pressure.

  16. Numerical modeling of high-voltage circuit breaker arcs and their interraction with the power system

    NASA Astrophysics Data System (ADS)

    Orama, Lionel R.

    In this work the interaction between series connected gas and vacuum circuit breaker arcs has been studied. The breakdown phenomena in vacuum interrupters during the post arc current period have been of special interest. Numerical models of gas and vacuum arcs were developed in the form of black box models. Especially, the vacuum post arc model was implemented by combining the existing transition model with an ion density function and expressions for the breakdown mechanisms. The test series studied reflect that for electric fields on the order of 10sp7V/m over the anode, the breakdown of the vacuum gap can result from a combination of both thermal and electrical stresses. For a particular vacuum device, the vacuum model helps to find the interruption limits of the electric field and power density over the anode. The series connection of gas and vacuum interrupters always performs better than the single gas device. Moreover, to take advantage of the good characteristics of both devices, the time between the current zero crossing in each interrupter can be changed. This current zero synchronization is controlled by changing the capacitance in parallel to the gas device. This gas/vacuum interrupter is suitable for interruption of very stressful short circuits in which the product of the dI/dt before current zero and the dV/dt after current zero is very high. Also, a single SF6 interrupter can be replaced by an air circuit breaker of the same voltage rating in series with a vacuum device without compromising the good performance of the SF6 device. Conceptually, a series connected vacuum device can be used for high voltage applications with equal distribution of electrical stresses between the individual interrupters. The equalization can be made by a sequential opening of the individual contact pairs, beginning with the interruptors that are closer to ground potential. This could eliminate the use of grading capacitors.

  17. System for instrumenting and manipulating apparatuses in high voltage

    DOEpatents

    Jordan, Kevin

    2016-06-07

    A system for energizing, operating and manipulating apparatuses in high voltage systems. The system uses a dielectric gas such as SF.sub.6 as a driving power supply for a pneumatic motor which ultimately charges a battery or other energy storage device. The stored energy can then be used for instrumentation equipment, or to power any electrical equipment, in the high voltage deck. The accompanying method provides for the use of the SF6 system for operating an electrical device in a high-voltage environment.

  18. High voltage bushing having weathershed and surrounding stress relief collar

    DOEpatents

    Cookson, Alan H.

    1981-01-01

    A high voltage electric bushing comprises a hollow elongated dielectric weathershed which encloses a high voltage conductor. A collar formed of high voltage dielectric material is positioned over the weathershed and is bonded thereto by an interface material which precludes moisture-like contaminants from entering between the bonded portions. The collar is substantially thicker than the adjacent weathershed which it surrounds, providing relief of the electric stresses which would otherwise appear on the outer surface of the weathershed. The collar may include a conductive ring or capacitive foil to further relieve electric stresses experienced by the bushing.

  19. Achievement of balanced high frequency and high breakdown by InGaAs-based high-electron-mobility transistors with slant field plates

    NASA Astrophysics Data System (ADS)

    Hosotani, Tomotaka; Otsuji, Taiichi; Suemitsu, Tetsuya

    2016-11-01

    InGaAs-based high-electron-mobility transistors (HEMTs) with SiCN-based multistep slant field plates (FPs) and two-step recess (TSR) gates are fabricated and characterized. The slant FPs, which were originally developed for GaN-HEMTs, are integrated with InGaAs-HEMTs to increase the breakdown voltage (BV). The BVs of InGaAs-HEMTs increase by a factor of 1.5-2. However, FPs have a negative effect on the current gain cutoff frequency (f T). Consequently, BV and f T have a trade-off relationship. The combination of slant FPs and TSR gates enables the achievement of a balanced BV and f T of 8.0 V and 106 GHz, respectively, in 130-nm-gate-length InGaAs-HEMTs.

  20. Self-Healable Electrical Insulation for High Voltage Applications

    NASA Technical Reports Server (NTRS)

    Williams, Tiffany S.

    2017-01-01

    Polymeric aircraft electrical insulation normally degrades by partial discharge with increasing voltage, which causes excessive localized Joule heating in the material and ultimately leads to dielectric failure of the insulator through thermal breakdown. Developing self-healing insulation could be a viable option to mitigate permanent mechanical degradation, thus increasing the longevity of the insulation. Instead of relying on catalyst and monomer-filled microcapsules to crack, flow, and cure at the damaged sites described in well-published mechanisms, establishment of ionic crosslinks could allow for multiple healing events to occur with the added benefit of achieving full recovery strength under certain thermal environments. This could be possible if the operating temperature of the insulator is the same as or close to the temperature where ionic crosslinks are formed. Surlyn, a commercial material with ionic crosslinks, was investigated as a candidate self-healing insulator based off prior demonstrations of self-healing behavior. Thin films of varying thicknesses were investigated and the effects of thickness on the dielectric strength were evaluated and compared to representative polymer insulators. The effects of thermal conditioning on the recovery strength and healing were observed as a function of time following dielectric breakdown. Moisture absorption was also studied to determine if moisture absorption rates in Surlyn were lower than that of common polyimides.

  1. Study of DC Circuit Breaker of H2-N2 Mixture Gas for High Voltage

    NASA Astrophysics Data System (ADS)

    Shiba, Yuji; Morishita, Yukinaga; Kaneko, Shuhei; Okabe, Shigemitsu; Mizoguchi, Hitoshi; Yanabu, Satoru

    Global warming caused by CO2 etc. is a field where the concern is very high. Especially, automobile emissions are problem for it. Therefore, the hybrid car is widely development and used recently. Hybrid car used electric power and gasoline. So, the car reduces CO2. Hybrid car has engine and motor. To rotate the motor, hybrid car has battery. This battery is large capacity. Therefore, the relay should interrupt high DC current for the switch of the motor and the engine. So, hybrid car used hydrogen gas filling relay We studied interruption test for the research of a basic characteristic of hydrogen gas. DC current has not current zero point. So, it is necessary to make the current zero by high arc voltage and forcible current zero point. The loss coefficient and arc voltage of hydrogen is high. Therefore, we studied interruption test for used high arc voltage. We studied interruption test and dielectric breakdown test of air, pure Hydrogen, and Hydrogen- nitrogen mixture gas. As a result, we realized H2-N2(80%-20%) is the best gas.

  2. Breakdown mechanism in hydrogen microdischarges from direct-current to 13.56 MHz

    NASA Astrophysics Data System (ADS)

    Klas, M.; Moravsky, L.; Matejčik, Š.; Radjenović, B.; Radmilović-Radjenović, M.

    2015-10-01

    This paper contains the results of experimental studies of the breakdown phenomena in hydrogen microdischarges from direct current to very high radio frequencies. Measurements were performed for two types of electrode configurations, glass melting electrodes and electrodes with Bruce profiles, by varying the gap size from 2.5μ \\text{m} to 100μ \\text{m} , with the pressure ranging between 30\\text{Torr} and 697\\text{Torr} . The breakdown voltage curves and waveforms of the discharge voltage and current are presented and discussed. In the low-frequency region, the breakdown voltage values are comparable to the dc breakdown voltage data. The breakdown voltages recorded for high frequencies are similar to and lower than those obtained for the low-frequency region. For the gap size of 2.5μ \\text{m} , the breakdown voltage does not depend on the frequency since the strong electric field formed in microgaps overcomes the electron work function, enhancing secondary-electron production. The current-generating mechanism before breakdown is field emission, as verified by a linear Fowler-Nordheim plot with a negative slope. With increasing gap size, the breakdown voltage increases since the contribution of the field emission is progressively reduced. The breakdown voltages that correspond to the glass melting electrodes are lower since such electrodes have edge issues and an inability to achieve a homogeneous field, unlike electrodes with Bruce profiles. The results presented here could be useful both for a better understanding of the non-equilibrium processes which occur in radio-frequency microdischarges during breakdown and for determining the minimum ignition voltages in microplasma sources as well as the maximum safe operating voltage and critical dimensions in other microdevices.

  3. Fast recovery, high voltage silicon diodes for AC motor controllers

    NASA Technical Reports Server (NTRS)

    Balodis, V.; Berman, A. H.; Gaugh, C.

    1982-01-01

    The fabrication and characterization of a high voltage, high current, fast recovery silicon diode for use in AC motor controllers, originally developed for NASA for use in avionics power supplies, is presented. The diode utilizes a positive bevel PIN mesa structure with glass passivation and has the following characteristics: peak inverse voltage - 1200 volts, forward voltage at 50 amperes - 1.5 volts, reverse recovery time of 200 nanoseconds. Characterization data for the diode, included in a table, show agreement with design concepts developed for power diodes. Circuit diagrams of the diode are also given.

  4. Multiple high voltage output DC-to-DC power converter

    NASA Technical Reports Server (NTRS)

    Cronin, Donald L. (Inventor); Farber, Bertrand F. (Inventor); Gehm, Hartmut K. (Inventor); Goldin, Daniel S. (Inventor)

    1977-01-01

    Disclosed is a multiple output DC-to-DC converter. The DC input power is filtered and passed through a chopper preregulator. The chopper output is then passed through a current source inverter controlled by a squarewave generator. The resultant AC is passed through the primary winding of a transformer, with high voltages induced in a plurality of secondary windings. The high voltage secondary outputs are each solid-state rectified for passage to individual output loads. Multiple feedback loops control the operation of the chopper preregulator, one being responsive to the current through the primary winding and another responsive to the DC voltage level at a selected output.

  5. Current Status of High Voltage Engineering in Indonesia

    NASA Astrophysics Data System (ADS)

    Hidayat, Syarif; Hidayat, Suwarno; Zoro, Reynaldo

    This paper reports current status of research activities in the field of high voltage engineering and its application in Indonesia. In general, the activities were driven by the application of high voltage (HV) and extra high voltage (EHV) transmission systems in the country. The operation and maintenance of HV and EHV equipments are greatly affected by the tropical climate of the country. This attracts researchers to investigate the effects of tropical climate on HV and EHV equipments. Other researches concentrated on the investigation of physics of tropical lightning and lightning protection. In this paper, applications and problems of high voltage engineering, research activities in universities, as well as in research institutes and utilities are briefly introduced.

  6. High-voltage supplies for corona-electrostatic separators

    SciTech Connect

    Iuga, A.; Neamtu, V.; Suarasan, I.; Morar, R.; Dascalescu, L.

    1995-12-31

    The selection of the high-voltage supply can play an important role in the optimization of electrostatic separation processes. The present work aimed to evaluate the influence of the main high-voltage parameters (waveform, polarity, level) on the efficiency of electroseparation, in the case of insulation-metal granular mixtures. A roll-type laboratory electroseparator was employed for the experimental study and the tests were carried out with granular materials prelevated from the technological flow sheet of a recycling plant for electric wire scraps. The experiments shown the existence of a strong interdependence between the level of the operating voltage and the other electrical parameters. Although the full-wave rectifier allows for lower operating voltages than the half-wave rectifier, its general effectiveness in electroseparation processes is superior. The optimum operating voltage of an electroseparator seems to be slightly lower than the level at which the frequency of the spark discharges tends to exceed 60 min{sup {minus}1}. The oscillograms of the voltage and of the current across the separator proved to be of great use for studying the transition from corona to spark discharges. Good insulation-metal electroseparation can be achieved at either positive or negative polarity of the high-voltage supply, but negative electrode energization is recommended for most industry applications.

  7. Dynamics of laser-guided alternating current high voltage discharges

    NASA Astrophysics Data System (ADS)

    Daigle, J.-F.; Théberge, F.; Lassonde, P.; Kieffer, J.-C.; Fujii, T.; Fortin, J.; Châteauneuf, M.; Dubois, J.

    2013-10-01

    The dynamics of laser-guided alternating current high voltage discharges are characterized using a streak camera. Laser filaments were used to trigger and guide the discharges produced by a commercial Tesla coil. The streaking images revealed that the dynamics of the guided alternating current high voltage corona are different from that of a direct current source. The measured effective corona velocity and the absence of leader streamers confirmed that it evolves in a pure leader regime.

  8. Optical control system for high-voltage terminals

    DOEpatents

    Bicek, John J.

    1978-01-01

    An optical control system for the control of devices in the terminal of an electrostatic accelerator includes a laser that is modulated by a series of preselected codes produced by an encoder. A photodiode receiver is placed in the laser beam at the high-voltage terminal of an electrostatic accelerator. A decoder connected to the photodiode decodes the signals to provide control impulses for a plurality of devices at the high voltage of the terminal.

  9. Ultrastable Natural Ester-Based Nanofluids for High Voltage Insulation Applications.

    PubMed

    Peppas, Georgios D; Bakandritsos, Aristides; Charalampakos, Vasilis P; Pyrgioti, Eleftheria C; Tucek, Jiri; Zboril, Radek; Gonos, Ioannis F

    2016-09-28

    Nanofluids for high voltage insulation systems have emerged as a potential substitute for liquid dielectrics in industrial applications. Nevertheless, the sedimentation of nanoparticles has been so far a serious barrier for their wide and effective exploitation. The present work reports on the development and in-depth characterization of colloidally ultrastable natural ester oil insulation systems containing iron oxide nanocrystals which lift the problem of sedimentation and phase separation. Compared to state-of-the-art systems, the final product is endowed with increased dielectric strength, faster thermal response, lower dielectric losses (decreased dissipation factor: tan δ), and very high endurance during discharge stressing. The developed nanofluid was studied and compared with a similar system containing commercial iron oxide nanoparticles, the latter demonstrating extensive sedimentation. Herein, the dielectric properties of the nanofluids are analyzed at various concentrations by means of breakdown voltage and dissipation factor measurements. The characterization techniques unequivocally demonstrate the high performance reliability of the reported nanofluid, which constitutes a significant breakthrough in the field of high voltage insulation technologies.

  10. Design of 154 kV Extra-High-Voltage Prototype SF6 Bushing for Superconducting Electric Power Applications

    NASA Astrophysics Data System (ADS)

    Koo, Ja-yoon; Seong, Jae-gyu; Hwang, Jae-sang; Lee, Bang-wook; Lee, Sang-hwa

    2012-09-01

    One of the critical components to be developed for high-voltage superconducting devices, such as superconducting transformers, cables, and fault current limiters, is a high-voltage bushing to supply a high current to devices without insulation difficulties in cryogenic environments. Unfortunately, suitable bushings for high-temperature-superconductivity (HTS) equipment have not been fully developed to address cryogenic insulation issues. As a fundamental step towards developing the optimum design of the 154 kV prototype SF6 bushing of HTS devices, the puncture and creepage breakdown voltages of glass-fiber-reinforced-plastic (GFRP) were analyzed with a variety of configurations of electrodes and gap distances in the insulation material. And design factors of high-voltage cryogenic bushings were obtained from the result of tests. Finally, the withstand voltage tests of manufacturing a 154 kV extra-high-voltage (EHV) prototype bushing has been performed. Consequently, we verified the insulation level of the newly designed 154 kV EHV cryogenic prototype bushings for superconducting electric power applications.

  11. Investigating the effective range of vacuum ultraviolet-mediated breakdown in high-power microwave metamaterials

    SciTech Connect

    Liu, Chien-Hao Neher, Joel D. Booske, John H. Behdad, Nader

    2014-10-14

    Metamaterials and periodic structures operating under high-power excitations are susceptible to breakdown. It was recently demonstrated that a localized breakdown created in a given region of a periodic structure can facilitate breakdown in other regions of the structure where the intensity of the incident electromagnetic fields may not be high enough to cause breakdown under normal circumstances. It was also demonstrated that this phenomenon is due to the generation of vacuum ultraviolet radiation at the location of the initial discharge, which propagates to the neighboring regions (e.g., other unit cells in a periodic structure) and facilitates the generation of a discharge at a lower incident power level. In this paper, we present the results of an experimental study conducted to determine the effective range of this physical phenomenon for periodic structures that operate in air and in pure nitrogen gas at atmospheric pressure levels. It is demonstrated that when breakdown is induced in a periodic structure using a high-power pulse with a frequency of 9.382 GHz, duration of 0.8 μs, and peak power level of 25 kW, this phenomenon is highly likely to happen in radii of approximately 16–17 mm from the location of the initial discharge under these test conditions. The results of this study are significant in designing metamaterials and periodic structures for high-power microwave applications as they suggest that a localized discharge created in such a periodic structure with a periodicity less than 16–17 mm can spread over a large surface and result in a distributed discharge.

  12. High power breakdown testing of a photonic band-gap accelerator structure with elliptical rods

    NASA Astrophysics Data System (ADS)

    Munroe, Brian J.; Cook, Alan M.; Shapiro, Michael A.; Temkin, Richard J.; Dolgashev, Valery A.; Laurent, Lisa L.; Lewandowski, James R.; Yeremian, A. Dian; Tantawi, Sami G.; Marsh, Roark A.

    2013-01-01

    An improved single-cell photonic band-gap (PBG) structure with an inner row of elliptical rods (PBG-E) was tested with high power at a 60 Hz repetition rate at X-band (11.424 GHz), achieving a gradient of 128MV/m at a breakdown probability of 3.6×10-3 per pulse per meter at a pulse length of 150 ns. The tested standing-wave structure was a single high-gradient cell with an inner row of elliptical rods and an outer row of round rods; the elliptical rods reduce the peak surface magnetic field by 20% and reduce the temperature rise of the rods during the pulse by several tens of degrees, while maintaining good damping and suppression of high order modes. When compared with a single-cell standing-wave undamped disk-loaded waveguide structure with the same iris geometry under test at the same conditions, the PBG-E structure yielded the same breakdown rate within measurement error. The PBG-E structure showed a greatly reduced breakdown rate compared with earlier tests of a PBG structure with round rods, presumably due to the reduced magnetic fields at the elliptical rods vs the fields at the round rods, as well as use of an improved testing methodology. A post-testing autopsy of the PBG-E structure showed some damage on the surfaces exposed to the highest surface magnetic and electric fields. Despite these changes in surface appearance, no significant change in the breakdown rate was observed in testing. These results demonstrate that PBG structures, when designed with reduced surface magnetic fields and operated to avoid extremely high pulsed heating, can operate at breakdown probabilities comparable to undamped disk-loaded waveguide structures and are thus viable for high-gradient accelerator applications.

  13. Dielectric breakdown in a dilute plasma: A 20 kilovolt limited study

    NASA Technical Reports Server (NTRS)

    Mckinzie, D. J., Jr.; Grier, N. T.

    1972-01-01

    A dielectric breakdown study was made of several materials proposed for high-voltage (16-kV) use on solar-cell arrays at space conditions. The tests were made in an argon plasma whose electron density and temperature approximately simulated conditions at an altitude of 300 km. The maximum voltage used was 20 kV. The results indicate that the breakdown voltages of the materials tested are larger than those quoted in the literature for dielectric between two metal electrodes.

  14. Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer.

    PubMed

    Pang, Chin-Sheng; Hwu, Jenn-Gwo

    2014-01-01

    Improvement in the time-zero dielectric breakdown (TZDB) endurance of metal-oxide-semiconductor (MOS) capacitor with stacking structure of Al/HfO2/SiO2/Si is demonstrated in this work. The misalignment of the conduction paths between two stacking layers is believed to be effective to increase the breakdown field of the devices. Meanwhile, the resistance of the dielectric after breakdown for device with stacking structure would be less than that of without stacking structure due to a higher breakdown field and larger breakdown power. In addition, the role of interfacial layer (IL) in the control of the interface trap density (D it) and device reliability is also analyzed. Device with a thicker IL introduces a higher breakdown field and also a lower D it. High-resolution transmission electron microscopy (HRTEM) of the samples with different IL thicknesses is provided to confirm that IL is needed for good interfacial property.

  15. 30 CFR 75.822 - Underground high-voltage longwall cables.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Underground high-voltage longwall cables. 75... Distribution High-Voltage Longwalls § 75.822 Underground high-voltage longwall cables. In addition to the high-voltage cable design specifications in § 75.804 of this part, high-voltage cables for use on longwalls may...

  16. 30 CFR 75.822 - Underground high-voltage longwall cables.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Underground high-voltage longwall cables. 75... Distribution High-Voltage Longwalls § 75.822 Underground high-voltage longwall cables. In addition to the high-voltage cable design specifications in § 75.804 of this part, high-voltage cables for use on longwalls may...

  17. 30 CFR 75.822 - Underground high-voltage longwall cables.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Underground high-voltage longwall cables. 75... Distribution High-Voltage Longwalls § 75.822 Underground high-voltage longwall cables. In addition to the high-voltage cable design specifications in § 75.804 of this part, high-voltage cables for use on longwalls may...

  18. 30 CFR 75.822 - Underground high-voltage longwall cables.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Underground high-voltage longwall cables. 75... Distribution High-Voltage Longwalls § 75.822 Underground high-voltage longwall cables. In addition to the high-voltage cable design specifications in § 75.804 of this part, high-voltage cables for use on longwalls may...

  19. 30 CFR 75.822 - Underground high-voltage longwall cables.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Underground high-voltage longwall cables. 75... Distribution High-Voltage Longwalls § 75.822 Underground high-voltage longwall cables. In addition to the high-voltage cable design specifications in § 75.804 of this part, high-voltage cables for use on longwalls may...

  20. DC Breakdown Experiments

    SciTech Connect

    Calatroni, S.; Descoeudres, A.; Levinsen, Y.; Taborelli, M.; Wuensch, W.

    2009-01-22

    In the context of the CLIC (Compact Linear Collider) project investigations of DC breakdown in ultra high vacuum are carried out in parallel with high power RF tests. From the point of view of saturation breakdown field the best material tested so far is stainless steel, followed by titanium. Copper shows a four times weaker breakdown field than stainless steel. The results indicate clearly that the breakdown events are initiated by field emission current and that the breakdown field is limited by the cathode. In analogy to RF, the breakdown probability has been measured in DC and the data show similar behaviour as a function of electric field.

  1. Electrical breakdown studies with Mycalex insulators

    SciTech Connect

    Waldron, W.; Greenway, W.; Eylon, S.; Henestroza, E.; Yu, S.

    2003-05-01

    Insulating materials such as alumina and glass-bonded mica (Mycalex) are used in accelerator systems for high voltage feedthroughs, structural supports, and barriers between high voltage insulating oil and the vacuum beam pipe in induction accelerator cells. Electric fields in the triple points should be minimized to prevent voltage breakdown. Mechanical stress can compromise seals and result in oil contamination of the insulator surface. We have tested various insulator cleaning procedures including ultrasonic cleaning with a variety of aqueous-based detergents, and manual scrubbing with various detergents. Water sheeting tests were used to determine the initial results of the cleaning methods. Ultimately, voltage breakdown tests will be used to quantify the benefits of these cleaning procedures.

  2. Pre-breakdown evaluation of gas discharge mechanisms in microgaps

    SciTech Connect

    Semnani, Abbas; Peroulis, Dimitrios; Venkattraman, Ayyaswamy; Alexeenko, Alina A.

    2013-04-29

    The individual contributions of various gas discharge mechanisms to total pre-breakdown current in microgaps are quantified numerically. The variation of contributions of field emission and secondary electron emission with increasing electric field shows contrasting behavior even for a given gap size. The total current near breakdown decreases rapidly with gap size indicating that microscale discharges operate in a high-current, low-voltage regime. This study provides the first such analysis of breakdown mechanisms and aids in the formulation of physics-based theories for microscale breakdown.

  3. High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

    NASA Technical Reports Server (NTRS)

    Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

    2015-01-01

    A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources - a nominal 300-Volt high voltage input bus and a nominal 28-Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power supplies that provide power to the thruster auxiliary supplies, and two parallel 7.5 kilowatt power supplies that are capable of providing up to 15 kilowatts of total power at 300-Volts to 500-Volts to the thruster discharge supply. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall Effect Thruster. The performance of unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate the exceptional performance with full power efficiencies exceeding 97. With a space-qualified silicon carbide or similar high voltage, high efficiency power device, this design could evolve into a flight design for future missions that require high power electric propulsion systems.

  4. High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

    NASA Technical Reports Server (NTRS)

    Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

    2015-01-01

    A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

  5. High-voltage virtual-cathode microwave simulations

    SciTech Connect

    Thode, L.; Snell, C.M.

    1991-01-01

    In contrast to a conventional microwave tube, a virtual-cathode device operates above the space-charge limit where the depth of the space-charge potential is sufficiently large to cause electron reflection. The region associated with electron reflection is referred to as a virtual cathode. Microwaves can be generated through oscillations in the position of the virtual cathode and by reflexing electrons trapped in the potential well formed between the real and virtual cathodes. A virtual-cathode device based on the first mechanism is a vircator while one based on latter mechanism is a reflex diode. A large number of low-voltage virtual-cathode microwave configurations have been investigated. Initial simulations of a high-voltage virtual-cathode device using a self-consistent particle-in-cell code indicated reasonable conversion efficiency with no frequency chirping. The nonchirping character of the high-voltage virtual-cathode device lead to the interesting possibility of locking four very-high-power microwave devices together using the four transmission lines available at Aurora. Subsequently, in support of two high-voltage experiments, simulations were used to investigate the effect of field-emission threshold and velvet position on the cathode; anode and cathode shape; anode-cathode gap spacing; output waveguide radius; diode voltage; a cathode-coaxial-cavity resonator; a high-frequency ac-voltage drive; anode foil scattering and energy loss; and ion emission on the microwave frequency and power. Microwave

  6. Development and Applications of discharges generated in liquids with short high voltage pulses

    NASA Astrophysics Data System (ADS)

    Kolb, Juergen; Miron, Camelia; Kruth, Angela; Balcerak, Michal; Bonislawski, Michal; Holub, Marcin

    2016-09-01

    Discharges that are generated within a liquid have been of scientific interest for more than a century. The possibility for a breakdown development that is not mediated by an initial gaseous phase is still disputed. In this respect are especially discharges that are instigated with short high voltage pulses calling for attention. Associated with this specific excitation scheme is a change in plasma development, plasma parameters and reaction mechanisms in the liquid. We have compared discharges in a point-to-plane geometry that were generated with 50-us or 10-ns high voltage pulses. Time-resolved shadowgraphy and spectroscopy were performed to evaluate discharge structures, plasma parameter and reactive species that were formed in distilled water or ethanol. Different propagation modes, with velocities of 6.7 km/s for tree-like streamers and only 50 m/s for bush-like streamers, were observed. Optical emission spectroscopy has shown the formation of molecular bands of nitrogen, as well as strongly broadened atomic hydrogen and oxygen, which are likely to be responsible for the observed surface modifications of polymers. With nanosecond high voltage pulses we found an increase of unsaturated bondings for polyimide surfaces that were exposed in the discharge volume.

  7. Preparation of near micrometer-sized TiO2 nanotube arrays by high voltage anodization.

    PubMed

    Ni, Jiahua; Noh, Kunbae; Frandsen, Christine J; Kong, Seong Deok; He, Guo; Tang, Tingting; Jin, Sungho

    2013-01-01

    Highly ordered TiO2 nanotube arrays with large diameter of 680-750 nm have been prepared by high voltage anodization in an electrolyte containing ethylene glycol at room temperature. To effectively suppress dielectric breakdown due to high voltage, pre-anodized TiO2 film was formed prior to the main anodizing process. Vertically aligned, large sized TiO2 nanotubes with double-wall structure have been demonstrated by SEM in detail under various anodizing voltages up to 225 V. The interface between the inner and outer walls in the double-wall configuration is porous. Surface topography of the large diameter TiO2 nanotube array is substantially improved and effective control of the growth of large diameter TiO2 nanotube array is achieved. Interestingly, the hemispherical barrier layer located at the bottom of TiO2 nanotubes formed in this work has crinkles analogous to the morphology of the brain cortex. These structures are potentially useful for orthopedic implants, storage of biological agents for controlled release, and solar cell applications.

  8. Single Stage High Voltage Power Supply for Ion Energies

    NASA Astrophysics Data System (ADS)

    Herty, F.; Franke, A.; Kiewe, B.

    2008-09-01

    The European Space Mission GOCE, the AlphaBus Platform and the new High Efficiency Multistage Plasma (HEMP) thruster for future telecom missions, have triggered the development of a Generic High Voltage Power Supply referred as "HVPS - Next Generation" at Astrium. Focusing to a generic approach a high voltage module has been designed as a core functional block. It can be manufactured for high voltage levels between a few hundreds Volts up to 2000 Volts at maximum power of 1.4kW per module. Higher power levels can be supported by connecting the necessary number of modules in parallel. The HVPS portfolio comprises different converter topologies which are optimised either for a fixed or a variable input/output voltage. The high voltage module can be used for all converter types [1]. This paper deals with a patented single stage variant, being optimised to deliver a constant output voltage with highest efficiency when supplied by a regulated power bus system. The presented converter topology is a derivation of a single-stage, phase-shift controlled full bridge. The bridge is used to generate an ac voltage which is stepped up by a high voltage transformer. At the high voltage output side, the ac voltage is converted to a dc voltage using a rectifier and filter stage. All high voltage components are accommodated in a separate high voltage assembly which is completely encapsulated using a space proven epoxy-based potting material. The bridge is operated in a way that the transformer current has an almost rectangular shape. This reduces I2R losses of the bridge and the HV transformer and permits the use of small filter capacitors and inductors, resulting in a very high power to mass ratio. According to the a.m. current shape, the presented converter is named 'Flattop converter'. Reduction of copper losses is further achieved by reduction of the proximity losses of the HV transformer secondary and primary windings. All power switches and high voltage rectifier diodes

  9. Planar LTCC transformers for high voltage flyback converters: Part II.

    SciTech Connect

    Schofield, Daryl; Schare, Joshua M., Ph.D.; Slama, George; Abel, David

    2009-02-01

    This paper is a continuation of the work presented in SAND2007-2591 'Planar LTCC Transformers for High Voltage Flyback Converters'. The designs in that SAND report were all based on a ferrite tape/dielectric paste system originally developed by NASCENTechnoloy, Inc, who collaborated in the design and manufacturing of the planar LTCC flyback converters. The output/volume requirements were targeted to DoD application for hard target/mini fuzing at around 1500 V for reasonable primary peak currents. High voltages could be obtained but with considerable higher current. Work had begun on higher voltage systems and is where this report begins. Limits in material properties and processing capabilities show that the state-of-the-art has limited our practical output voltage from such a small part volume. In other words, the technology is currently limited within the allowable funding and interest.

  10. Design & Fabrication of a High-Voltage Photovoltaic Cell

    SciTech Connect

    Felder, Jennifer; /North Carolina State U. /SLAC

    2012-09-05

    Silicon photovoltaic (PV) cells are alternative energy sources that are important in sustainable power generation. Currently, applications of PV cells are limited by the low output voltage and somewhat low efficiency of such devices. In light of this fact, this project investigates the possibility of fabricating high-voltage PV cells on float-zone silicon wafers having output voltages ranging from 50 V to 2000 V. Three designs with different geometries of diffusion layers were simulated and compared in terms of metal coverage, recombination, built-in potential, and conduction current density. One design was then chosen and optimized to be implemented in the final device design. The results of the simulation serve as a feasibility test for the design concept and provide supportive evidence of the effectiveness of silicon PV cells as high-voltage power supplies.

  11. High voltage electrical amplifier having a short rise time

    DOEpatents

    Christie, David J.; Dallum, Gregory E.

    1991-01-01

    A circuit, comprising an amplifier and a transformer is disclosed that produces a high power pulse having a fast response time, and that responds to a digital control signal applied through a digital-to-analog converter. The present invention is suitable for driving a component such as an electro-optic modulator with a voltage in the kilovolt range. The circuit is stable at high frequencies and during pulse transients, and its impedance matching circuit matches the load impedance with the output impedance. The preferred embodiment comprises an input stage compatible with high-speed semiconductor components for amplifying the voltage of the input control signal, a buffer for isolating the input stage from the output stage; and a plurality of current amplifiers connected to the buffer. Each current amplifier is connected to a field effect transistor (FET), which switches a high voltage power supply to a transformer which then provides an output terminal for driving a load. The transformer comprises a plurality of transmission lines connected to the FETs and the load. The transformer changes the impedance and voltage of the output. The preferred embodiment also comprises a low voltage power supply for biasing the FETs at or near an operational voltage.

  12. New High Voltage Ceramic Capacitors for Power Electronics

    NASA Astrophysics Data System (ADS)

    Laville, H.; Fabre, M.

    2014-08-01

    This paper presents the characteristics and performances of a new range of high voltage ceramic capacitors manufactured using a new ceramic material. This dielectric allows to get under working voltage the same capacitance values than using an X7R material with the advantage compared to X7R of a very low dissipation factor (less than 5.10-4). What makes these capacitors to be ideally suited for power applications where heat dissipation may be detrimental for performances and reliability.

  13. High voltage series connected tandem junction solar battery

    DOEpatents

    Hanak, Joseph J.

    1982-01-01

    A high voltage series connected tandem junction solar battery which comprises a plurality of strips of tandem junction solar cells of hydrogenated amorphous silicon having one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon, arranged in a tandem configuration, can have the same bandgap or differing bandgaps. The tandem junction strip solar cells are series connected to produce a solar battery of any desired voltage.

  14. Surface effects in high voltage silicon solar cells

    NASA Technical Reports Server (NTRS)

    Meulenberg, A.; Arndt, R. A.

    1982-01-01

    The surface of low-resistivity silicon solar cells appears to be a major source of dark diffusion current. This region, consisting of the interface and the adjacent heavily doped layer, therefore, prevents attainment of the high open-circuit voltages expected from these cells. This paper describes the experimental effort carried out to reduce the various contributions of dark current from the surface. Analysis of results from this effort points to means of improving cell voltages by changing processing and structures.

  15. Repeated Strike Process During Disconnector Operation in Ultra-High Voltage Gas-Insulated Switchgear

    NASA Astrophysics Data System (ADS)

    Guan, Yonggang; Cai, Yuanji; Chen, Weijiang; Liu, Weidong; Li, Zhibing; Yue, Gongchang; Zhang, Junmin

    2016-03-01

    Very fast transient over-voltage (VFTO), induced by disconnector operations in gas-insulated switchgears, has become the limiting dielectric stress at ultra-high voltage levels. Much work has been done to investigate single-strike waveforms of VFTO. However, little study has been carried out investigating the repeated strike process, which would influence VFTO significantly. In this paper, we carried out 450 effective experiments in an ultra-high voltage test circuit, and conducted calculations through the Monte Carlo simulation method, to investigate the repeated strike process. Firstly, the mechanism of the repeated strike process is proposed, based on the experimental results. Afterwards, statistical breakdown characteristics of disconnectors are obtained and analyzed. Finally, simulations of the repeated strike process are conducted, which indicate that the dielectric strength recovery speed and polarity effect factor have a joint effect on VFTO. This study enhances the understanding of the nature of VFTO, and may help to optimize the disconnector designed to minimize VFTO. supported in part by National Natural Science Foundation of China (No. 51277106) and in part by the National Basic Research Program of China (973 Program) (No. 2011CB209405)

  16. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad...

  17. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad...

  18. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad...

  19. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad...

  20. High voltage switch triggered by a laser-photocathode subsystem

    SciTech Connect

    Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

    2013-01-08

    A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

  1. Experimental investigation of SDBD plasma actuator driven by AC high voltage with a superimposed positive pulse bias voltage

    NASA Astrophysics Data System (ADS)

    Qi, Xiao-Hua; Yan, Hui-Jie; Yang, Liang; Hua, Yue; Ren, Chun-Sheng

    2017-08-01

    In this work, a driven voltage consisting of AC high voltage with a superimposed positive pulse bias voltage ("AC+ Positive pulse bias" voltage) is adopted to study the performance of a surface dielectric barrier discharge plasma actuator under atmospheric conditions. To compare the performance of the actuator driven by single-AC voltage and "AC+ Positive pulse bias" voltage, the actuator-induced thrust force and power consumption are measured as a function of the applied AC voltage, and the measured results indicate that the thrust force can be promoted significantly after superimposing the positive pulse bias voltage. The physical mechanism behind the thrust force changes is analyzed by measuring the optical properties, electrical characteristics, and surface potential distribution. Experimental results indicate that the glow-like discharge in the AC voltage half-cycle, next to the cycle where a bias voltage pulse has been applied, is enhanced after applying the positive pulse bias voltage, and this perhaps is the main reason for the thrust force increase. Moreover, surface potential measurement results reveal that the spatial electric field formed by the surface charge accumulation after positive pulse discharge can significantly affect the applied external electric field, and this perhaps can be responsible for the experimental phenomenon that the decrease of thrust force is delayed by pulse bias voltage action after the filament discharge occurs in the glow-like discharge region. The schlieren images further verify that the actuator-induced airflow velocity increases with the positive pulse voltage.

  2. Optimal high-voltage energization of corona-electrostatic separators

    SciTech Connect

    Iuga, A.; Neamtu, V.; Suarasan, I.; Morar, R.; Dascalescu, L.

    1998-03-01

    The selection of the high-voltage supply can play an important role in the optimization of electrostatic separation processes. This paper aims to evaluate the influence of the main high-voltage parameters (waveform, polarity, level) on the efficiency of electrostatic separation, in the case of insulation-metal granular mixtures. A roll-type laboratory high-tension separator was employed for the experimental study, and the tests were carried out with samples of granular materials taken from the technological flowsheet of a recycling plant for electric wire scraps. The oscillograms of the voltage and of the current across the separator proved to be of great use for studying the transition from corona to spark discharges. The experiments, performed under various operating conditions (roll speed, roll radius, high-voltage level, interelectrode distance), show the existence of a strong interdependence between these parameters, the frequency of spark discharges, and the efficiency of the separation process. The reported results suggest that monitoring the frequency of spark discharges, and the efficiency of the separation process. The reported results suggest that monitoring the frequency of the spark discharges could be of use for controlling the optimum operating voltage for a given electrostatic separation application. Although the full-wave rectifier allows for lower operating voltages than the half-wave rectifier, its general effectiveness in electrostatic separation processes is superior. Good insulation-metal electrostatic separation can be achieved at either positive or negative polarity of the high-voltage supply, but negative electrode energization is recommended for most industrial applications. The methodology proposed in this paper might be successfully employed for establishing the optimal operating conditions of electrode energization for other applications, such as electrostatic precipitation, plasma chemical purification of gases, or charge

  3. Suppression of vacuum breakdown using thin film coatings

    SciTech Connect

    Fleddermann, C.B.; Mayberry, C.S.; Wroblewski, B.; Schamiloglu, E.

    1993-12-01

    The use of thin film coatings for increasing the breakdown voltage in a parallel-plane high-voltage gap has been investigated. Both metallic and ceramic thin films were deposited at varying thicknesses and deposition conditions on a screen cathode using ion-beam sputtering. Improvements in breakdown voltage were observed for nearly any type of deposited film, with significant variations in breakdown voltage depending on film thickness and oxygen and partial pressure during ceramic film deposition. For 500 nm thick metallic or oxide films, breakdown voltage was nearly doubled compared to the bare stainless steel screen, which is attributed to the burying of surface imperfections on the cathode. For 200 nm thick films, the covering of imperfections is less effective; however, high breakdown voltages can still be obtained by choosing an appropriate oxygen partial pressure during film deposition. Electric fields as high as 60 kV/mm were sustained across a 1 mm gap for 10 {mu}sec pulses; lesser fields could be sustained for as long as 10 ms. These coatings allowed for the successful study of a planar liquid metal ion source.

  4. High-Capacity, High-Voltage Composite Oxide Cathode Materials

    NASA Technical Reports Server (NTRS)

    Hagh, Nader M.

    2015-01-01

    This SBIR project integrates theoretical and experimental work to enable a new generation of high-capacity, high-voltage cathode materials that will lead to high-performance, robust energy storage systems. At low operating temperatures, commercially available electrode materials for lithium-ion (Li-ion) batteries do not meet energy and power requirements for NASA's planned exploration activities. NEI Corporation, in partnership with the University of California, San Diego, has developed layered composite cathode materials that increase power and energy densities at temperatures as low as 0 degC and considerably reduce the overall volume and weight of battery packs. In Phase I of the project, through innovations in the structure and morphology of composite electrode particles, the partners successfully demonstrated an energy density exceeding 1,000 Wh/kg at 4 V at room temperature. In Phase II, the team enhanced the kinetics of Li-ion transport and electronic conductivity at 0 degC. An important feature of the composite cathode is that it has at least two components that are structurally integrated. The layered material is electrochemically inactive; however, upon structural integration with a spinel material, the layered material can be electrochemically activated and deliver a large amount of energy with stable cycling.

  5. Gaseous insulators for high voltage electrical equipment

    DOEpatents

    Christophorou, Loucas G.; James, David R.; Pace, Marshall O.; Pai, Robert Y.

    1979-01-01

    Gaseous insulators comprise compounds having high attachment cross sections for electrons having energies in the 0-1.3 electron volt range. Multi-component gaseous insulators comprise compounds and mixtures having overall high electron attachment cross sections in the 0-1.3 electron volt range and moderating gases having high cross sections for inelastic interactions with electrons of energies 1-4 electron volts. Suitable electron attachment components include hexafluorobutyne, perfluorobutene-2, perfluorocyclobutane, perfluorodimethylcyclobutane, perfluorocyclohexene, perfluoromethylcyclohexane, hexafluorobutadiene, perfluoroheptene-1 and hexafluoroazomethane. Suitable moderating gases include N.sub.2, CO, CO.sub.2 and H.sub.2. The gaseous insulating mixture can also contain SF.sub.6, perfluoropropane and perfluorobenzene.

  6. Gaseous insulators for high voltage electrical equipment

    DOEpatents

    Christophorou, Loucas G.; James, David R.; Pace, Marshall O.; Pai, Robert Y.

    1981-01-01

    Gaseous insulators comprise compounds having high attachment cross sections for electrons having energies in the 0-1.3 electron volt range. Multi-component gaseous insulators comprise compounds and mixtures having overall high electron attachment cross sections in the 0-1.3 electron volt range and moderating gases having high cross sections for inelastic interactions with electrons of energies 1-4 electron volts. Suitable electron attachment components include hexafluorobutyne, perfluorobutene-2, perfluorocyclobutane, perfluorodimethylcyclobutane, perfluorocyclohexene, perfluoromethylcyclohexane, hexafluorobutadiene, perfluoroheptene-1 and hexafluoroazomethane. Suitable moderating gases include N.sub.2, CO, CO.sub.2 and H.sub.2. The gaseous insulating mixture can also contain SF.sub.6, perfluoropropane and perfluorobenzene.

  7. A high voltage nanosecond pulser with independently adjustable output voltage, pulse width, and pulse repetition frequency

    NASA Astrophysics Data System (ADS)

    Prager, James; Ziemba, Timothy; Miller, Kenneth; Carscadden, John; Slobodov, Ilia

    2014-10-01

    Eagle Harbor Technologies (EHT) is developing a high voltage nanosecond pulser capable of generating microwaves and non-equilibrium plasmas for plasma medicine, material science, enhanced combustion, drag reduction, and other research applications. The EHT nanosecond pulser technology is capable of producing high voltage (up to 60 kV) pulses (width 20-500 ns) with fast rise times (<10 ns) at high pulse repetition frequency (adjustable up to 100 kHz) for CW operation. The pulser does not require the use of saturable core magnetics, which allows for the output voltage, pulse width, and pulse repetition frequency to be fully adjustable, enabling researchers to explore non-equilibrium plasmas over a wide range of parameters. A magnetic compression stage can be added to improve the rise time and drive lower impedance loads without sacrificing high pulse repetition frequency operation. Work supported in part by the US Navy under Contract Number N00014-14-P-1055 and the US Air Force under Contract Number FA9550-14-C-0006.

  8. E-beam high voltage switching power supply

    DOEpatents

    Shimer, D.W.; Lange, A.C.

    1997-03-11

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360{degree}/n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load. 7 figs.

  9. E-beam high voltage switching power supply

    DOEpatents

    Shimer, Daniel W.; Lange, Arnold C.

    1997-01-01

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360.degree./n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load.

  10. High-voltage pulsed generator for dynamic fragmentation of rocks.

    PubMed

    Kovalchuk, B M; Kharlov, A V; Vizir, V A; Kumpyak, V V; Zorin, V B; Kiselev, V N

    2010-10-01

    A portable high-voltage (HV) pulsed generator has been designed for rock fragmentation experiments. The generator can be used also for other technological applications. The installation consists of low voltage block, HV block, coaxial transmission line, fragmentation chamber, and control system block. Low voltage block of the generator, consisting of a primary capacitor bank (300 μF) and a thyristor switch, stores pulse energy and transfers it to the HV block. The primary capacitor bank stores energy of 600 J at the maximum charging voltage of 2 kV. HV block includes HV pulsed step up transformer, HV capacitive storage, and two electrode gas switch. The following technical parameters of the generator were achieved: output voltage up to 300 kV, voltage rise time of ∼50 ns, current amplitude of ∼6 kA with the 40 Ω active load, and ∼20 kA in a rock fragmentation regime (with discharge in a rock-water mixture). Typical operation regime is a burst of 1000 pulses with a frequency of 10 Hz. The operation process can be controlled within a wide range of parameters. The entire installation (generator, transmission line, treatment chamber, and measuring probes) is designed like a continuous Faraday's cage (complete shielding) to exclude external electromagnetic perturbations.

  11. Symmetrical SOI MESFET with a dual cavity region (DCR-SOI MESFET) to promote high-voltage and radio-frequency performances

    NASA Astrophysics Data System (ADS)

    Anvarifard, Mohammad K.

    2016-10-01

    A novel symmetrical SOI-MESFET is reported to enhance high-voltage and radio-frequency performances, successfully. Two p-type cavity regions with certain features are embedded in the proposed structure to control the channel region. The cavity regions absorb the channel potential lines resulting in an evener potential profile throughout the channel region. Hence, the critical electric field at the end of gate edge near the drain will be considerably reduced thus increasing the breakdown voltage, finally. A comprehensive comparison in terms of breakdown voltage, radio-frequency parameters, drain-source conductance and minimum noise figure shows that the reported new device reaches a superior electrical performance when compared with a conventional SOI MESFET.

  12. Voltage-current and voltage-flux characteristics of asymmetric high TC DC SQUIDs

    NASA Astrophysics Data System (ADS)

    Novikov, I. L.; Greenberg, Ya. S.; Schultze, V.; Ijsselsteijn, R.; Meyer, H.-G.

    2009-01-01

    We report measurements of transfer functions and flux shifts of 20 on-chip high TC DC SQUIDs half of which were made purposely geometrically asymmetric. All of these SQUIDs were fabricated using standard high TC thin-film technology and they were single layer ones, having 140 nm thickness of YBa 2Cu 3O 7- x film deposited by laser ablation onto MgO bicrystal substrates with 24° misorientation angle. For every SQUID the parameters of its intrinsic asymmetry, i.e., the density of critical current and resistivity of every junction, were measured directly and independently. We showed that the main reason for the on-chip spreading of SQUIDs’ voltage-current and voltage-flux characteristics was the intrinsic asymmetry. We found that for SQUIDs with a relative large inductance ( L > 120 pH) both the voltage modulation and the transfer function were not very sensitive to the junctions asymmetry, whereas SQUIDs with smaller inductance ( L ≃ 65-75 pH) were more sensitive. The results obtained in the paper are important for the implementation in the sensitive instruments based on high TC SQUID arrays and gratings.

  13. Improved Lifetime High Voltage Switch Electrode.

    DTIC Science & Technology

    2014-09-26

    and T.R. Burkes, "Erosion of Spark Gap Electrodes", IEEE Trans. Plasma Sci., PS-8, 149, (1980). 5. L.B. Gordon, M. Kristiansen, M.O. Hagler, H.C...Kirbie, R.M. Ness, L.L. Hatfield and 3.N. Marx, "Material Studies in a High Energy Spark Gap", IEEE Trans. Plasma Sci., PS-10, 286, (1982). 6. A.L...identify by block number) Spark switches, electrodes, ion implantation. _. / 20. ABSTRACT (Cqntnu* on ,.as maide Ii necossery and Identify by block number

  14. Design and realization of high voltage disconnector condition monitoring system

    NASA Astrophysics Data System (ADS)

    Shi, Jinrui; Xu, Tianyang; Yang, Shuixian; Li, Buoyang

    2017-08-01

    The operation status of the high voltage disconnector directly affects the safe and stable operation of the power system. This article uses the wireless frequency hopping communication technology of the communication module to achieve the temperature acquisition of the switch contacts and high voltage bus, to introduce the current value of the loop in ECS, and judge the operation status of the disconnector by considering the ambient temperature, calculating the temperature rise; And through the acquisition of the current of drive motor in the process of switch closing and opening, and fault diagnosis of the disconnector by analyzing the change rule of the drive motor current, the condition monitoring of the high voltage disconnector is realized.

  15. High voltage stability performance of a gamma ray detection device

    NASA Astrophysics Data System (ADS)

    Abdullah, Nor Arymaswati; Lombigit, Lojius; Rahman, Nur Aira Abd

    2014-02-01

    An industrial grade digital radiation survey meter device is currently being developed at Malaysian Nuclear Agency. This device used a cylindrical type Geiger Mueller (GM) which acts as a detector. GM detector operates at relatively high direct current voltages depend on the type of GM tube. This thin/thick walled cylindrical type of GM tube operates at 450-650 volts range. Proper value and stability performance of high voltage are important parameters to ensure that this device give a reliable radiation dose measurement. This paper will present an assessment of the stability and performance of the high voltage supply for radiation detector. The assessment is performed using System Identification tools box in MATLAB and mathematical statistics.

  16. High voltage stability performance of a gamma ray detection device

    SciTech Connect

    Abdullah, Nor Arymaswati; Lombigit, Lojius; Rahman, Nur Aira Abd

    2014-02-12

    An industrial grade digital radiation survey meter device is currently being developed at Malaysian Nuclear Agency. This device used a cylindrical type Geiger Mueller (GM) which acts as a detector. GM detector operates at relatively high direct current voltages depend on the type of GM tube. This thin/thick walled cylindrical type of GM tube operates at 450-650 volts range. Proper value and stability performance of high voltage are important parameters to ensure that this device give a reliable radiation dose measurement. This paper will present an assessment of the stability and performance of the high voltage supply for radiation detector. The assessment is performed using System Identification tools box in MATLAB and mathematical statistics.

  17. Amyloid-beta binds catalase with high affinity and inhibits hydrogen peroxide breakdown.

    PubMed Central

    Milton, N G

    1999-01-01

    Amyloid-beta (Abeta) specifically bound purified catalase with high affinity and inhibited catalase breakdown of H(2)O(2). The Abeta-induced catalase inhibition involved formation of the inactive catalase Compound II and was reversible. Catalase<-->Abeta interactions provide rapid functional assays for the cytotoxic domain of Abeta and suggest a mechanism for some of the observed actions of Abeta plus catalase in vitro. PMID:10567208

  18. Cleaning High-Voltage Equipment With Corncob Grit

    NASA Technical Reports Server (NTRS)

    Caveness, C.

    1986-01-01

    High electrical resistance of particles makes power shutdown unnecessary. New, inexpensive method of cleaning high-voltage electrical equipment uses plentiful agricultural product - corncob grit. Method removes dirt and debris from transformers, circuit breakers, and similar equipment. Suitable for utilities, large utility customers, and electrical-maintenance services.

  19. Cleaning High-Voltage Equipment With Corncob Grit

    NASA Technical Reports Server (NTRS)

    Caveness, C.

    1986-01-01

    High electrical resistance of particles makes power shutdown unnecessary. New, inexpensive method of cleaning high-voltage electrical equipment uses plentiful agricultural product - corncob grit. Method removes dirt and debris from transformers, circuit breakers, and similar equipment. Suitable for utilities, large utility customers, and electrical-maintenance services.

  20. Initiation of vacuum insulator surface high-voltage flashover with electrons produced by laser illumination

    SciTech Connect

    Krasik, Ya. E.; Leopold, J. G.

    2015-08-15

    In this paper, experiments are described in which cylindrical vacuum insulator samples and samples inclined at 45° relative to the cathode were stressed by microsecond timescale high-voltage pulses and illuminated by focused UV laser beam pulses. In these experiments, we were able to distinguish between flashover initiated by the laser producing only photo-electrons and when plasma is formed. It was shown that flashover is predominantly initiated near the cathode triple junction. Even dense plasma formed near the anode triple junction does not necessarily lead to vacuum surface flashover. The experimental results directly confirm our conjecture that insulator surface breakdown can be avoided by preventing its initiation [J. G. Leopold et al., Phys. Rev. ST Accel. Beams 10, 060401 (2007)] and complement our previous experimental results [J. Z. Gleizer et al., IEEE Trans. Dielectr. Electr. Insul. 21, 2394 (2014) and J. Z. Gleizer et al., J. Appl. Phys. 117, 073301 (2015)].

  1. Initiation of vacuum insulator surface high-voltage flashover with electrons produced by laser illumination

    NASA Astrophysics Data System (ADS)

    Krasik, Ya. E.; Leopold, J. G.

    2015-08-01

    In this paper, experiments are described in which cylindrical vacuum insulator samples and samples inclined at 45° relative to the cathode were stressed by microsecond timescale high-voltage pulses and illuminated by focused UV laser beam pulses. In these experiments, we were able to distinguish between flashover initiated by the laser producing only photo-electrons and when plasma is formed. It was shown that flashover is predominantly initiated near the cathode triple junction. Even dense plasma formed near the anode triple junction does not necessarily lead to vacuum surface flashover. The experimental results directly confirm our conjecture that insulator surface breakdown can be avoided by preventing its initiation [J. G. Leopold et al., Phys. Rev. ST Accel. Beams 10, 060401 (2007)] and complement our previous experimental results [J. Z. Gleizer et al., IEEE Trans. Dielectr. Electr. Insul. 21, 2394 (2014) and J. Z. Gleizer et al., J. Appl. Phys. 117, 073301 (2015)].

  2. Development and Breakdown of Goertler Vortices in High Speed Boundary Layers

    NASA Technical Reports Server (NTRS)

    Li, Fei; Choudhari, Meelan; Chang, Chau-Lyan; Wu, Minwei; Greene, Ptrick T.

    2010-01-01

    The nonlinear development of G rtler instability over a concave surface gives rise to a highly distorted stationary flow in the boundary layer that has strong velocity gradients in both spanwise and wall-normal directions. This distorted flow is susceptible to strong, high frequency secondary instability that leads to the onset of transition. For high Mach number flows, the boundary layer is also subject to the second mode instability. The nonlinear development of G rtler vortices and the ensuing growth and breakdown of secondary instability, the G rtler vortex interactions with second mode instabilities as well as oblique second mode interactions are examined in the context of both internal and external hypersonic configurations using nonlinear parabolized stability equations, 2-D eigenvalue analysis and direct numerical simulation. For G rtler vortex development inside the Purdue Mach 6 Ludwieg tube wind tunnel, multiple families of unstable secondary eigenmodes are identified and their linear and nonlinear evolution is examined. The computation of secondary instability is continued past the onset of transition to elucidate the physical mechanisms underlying the laminar breakdown process. Nonlinear breakdown scenarios associated with transition over a Mach 6 compression cone configuration are also explored.

  3. High-Voltage, High-Impedance Ion Beam Production

    DTIC Science & Technology

    2009-06-01

    20375 USA ∗ Work supported by the US Office of Naval Research ξ email : ddh...voltage adder at typical parameters of 4 MV, 360 kA, and 70-90-kA ion current. These results are consistent with theory and with LSP calculations. This...fluorine via 19F(p,αγ)16O, from Ref. 2 This paper describes ion-beam diode experiments on the Mercury inductive voltage adder at ~4-MV, ~360-kA

  4. High voltage electron microscopy of lunar samples

    NASA Technical Reports Server (NTRS)

    Fernandez-Moran, H.

    1973-01-01

    Lunar pyroxenes from Apollo 11, 12, 14, and 15 were investigated. The iron-rich and magnesium-rich pyroxene specimens were crushed to a grain size of ca. 50 microns and studied by a combination of X-ray and electron diffraction, electron microscopy, 57 Fe Mossbauer spectroscopy and X-ray crystallography techniques. Highly ordered, uniform electron-dense bands, corresponding to exsolution lamellae, with average widths of ca. 230A to 1000A dependent on the source specimen were observed. These were?qr separated by wider, less-dense interband spacings with average widths of ca. 330A to 3100A. In heating experiments, splitting of the dense bands into finer structures, leading finally to obliteration of the exsolution lamellae was recorded. The extensive exsolution is evidence for significantly slower cooling rates, or possibly annealing, at temperatures in the subsolidus range, adding evidence that annealing of rock from the surface of the moon took place at ca. 600 C. Correlation of the band structure with magnetic ordering at low temperatures and iron clustering within the bands was studied.

  5. High-Voltage, Low-Power BNC Feedthrough Terminator

    NASA Technical Reports Server (NTRS)

    Bearden, Douglas

    2012-01-01

    This innovation is a high-voltage, lowpower BNC (Bayonet Neill-Concelman) feedthrough that enables the user to terminate an instrumentation cable properly while connected to a high voltage, without the use of a voltage divider. This feedthrough is low power, which will not load the source, and will properly terminate the instrumentation cable to the instrumentation, even if the cable impedance is not constant. The Space Shuttle Program had a requirement to measure voltage transients on the orbiter bus through the Ground Lightning Measurement System (GLMS). This measurement has a bandwidth requirement of 1 MHz. The GLMS voltage measurement is connected to the orbiter through a DC panel. The DC panel is connected to the bus through a nonuniform cable that is approximately 75 ft (approximately equal to 23 m) long. A 15-ft (approximately equal to 5-m), 50-ohm triaxial cable is connected between the DC panel and the digitizer. Based on calculations and simulations, cable resonances and reflections due to mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. A voltage divider at the DC panel, and terminating the 50-ohm cable properly, would eliminate this issue. Due to implementation issues, an alternative design was needed to terminate the cable properly without the use of a voltage divider. Analysis shows how the cable resonances and reflections due to the mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. After simulating a dampening circuit located at the digitizer, simulations were performed to show how the cable resonances were dampened and the accuracy was improved significantly. Test cables built to verify simulations were accurate. Since the dampening circuit is low power, it can be packaged in a BNC feedthrough.

  6. The research of high voltage switchgear detecting unit

    NASA Astrophysics Data System (ADS)

    Ji, Tong; Xie, Wei; Wang, Xiaoqing; Zhang, Jinbo

    2017-07-01

    In order to understand the status of the high voltage switch in the whole life circle, you must monitor the mechanical and electrical parameters that affect device health. So this paper gives a new high voltage switchgear detecting unit based on ARM technology. It can measure closing-opening mechanical wave, storage motor current wave and contactor temperature to judge the device’s health status. When something goes wrong, it can be on alert and give some advice. The practice showed that it can meet the requirements of circuit breaker mechanical properties temperature online detection.

  7. Copper wire theft and high voltage electrical burns

    PubMed Central

    Francis, Eamon C; Shelley, Odhran P

    2014-01-01

    High voltage electrical burns are uncommon. However in the midst of our economic recession we are noticing an increasing number of these injuries. Copper wire is a valuable commodity with physical properties as an excellent conductor of electricity making it both ubiquitous in society and prized on the black market. We present two consecutive cases referred to the National Burns Unit who sustained life threatening injuries from the alleged theft of high voltage copper wire and its omnipresence on an international scale. PMID:25356371

  8. High-voltage, high-current, solid-state closing switch

    DOEpatents

    Focia, Ronald Jeffrey

    2017-08-22

    A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

  9. High voltage pulse ignition of mercury discharge hollow cathodes

    NASA Technical Reports Server (NTRS)

    Wintucky, E. G.

    1973-01-01

    A high voltage pulse generated by a capacitor discharge into a step-up transformer has been demonstrated capable of consistently igniting hollow cathode mercury discharges at propellant flows and heater power levels much below those required by conventional cathode starting. Results are presented for 3.2-mm diameter enclosed and open keeper cathodes. Starting characteristics are shown to depend on keeper voltage, mercury flow rate, heater power, keeper orifice size, emissive materials, and electrode to which the pulse is applied. This starting technique has been used to start a cathode over 10,000 times without any degradation of starting capability. The starting reliability, propellant and power savings offered by the high voltage pulse start should favorably impact performance of electron bombardment thrusters in missions requiring many on-off duty cycles.

  10. Cardiac stimulation with high voltage discharge from stun guns.

    PubMed

    Nanthakumar, Kumaraswamy; Massé, Stephane; Umapathy, Karthikeyan; Dorian, Paul; Sevaptsidis, Elias; Waxman, Menashe

    2008-05-20

    The ability of an electrical discharge to stimulate the heart depends on the duration of the pulse, the voltage and the current density that reaches the heart. Stun guns deliver very short electrical pulses with minimal amount of current at high voltages. We discuss external stimulation of the heart by high voltage discharges and review studies that have evaluated the potential of stun guns to stimulate cardiac muscle. Despite theoretical analyses and animal studies which suggest that stun guns cannot and do not affect the heart, 3 independent investigators have shown cardiac stimulation by stun guns. Additional research studies involving people are needed to resolve the conflicting theoretical and experimental findings and to aid in the design of stun guns that are unable to stimulate the heart.

  11. Cardiac stimulation with high voltage discharge from stun guns

    PubMed Central

    Nanthakumar, Kumaraswamy; Massé, Stephane; Umapathy, Karthikeyan; Dorian, Paul; Sevaptsidis, Elias; Waxman, Menashe

    2008-01-01

    The ability of an electrical discharge to stimulate the heart depends on the duration of the pulse, the voltage and the current density that reaches the heart. Stun guns deliver very short electrical pulses with minimal amount of current at high voltages. We discuss external stimulation of the heart by high voltage discharges and review studies that have evaluated the potential of stun guns to stimulate cardiac muscle. Despite theoretical analyses and animal studies which suggest that stun guns cannot and do not affect the heart, 3 independent investigators have shown cardiac stimulation by stun guns. Additional research studies involving people are needed to resolve the conflicting theoretical and experimental findings and to aid in the design of stun guns that are unable to stimulate the heart. PMID:18450834

  12. Ultra High Voltage Propellant Isolators and Insulators for JIMO Ion Thrusters

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Gaier, James R.; Hung, Ching-Cheh; Walters, Patty A.; Sechkar, Ed; Panko, Scott; Kamiotis, Christina A.

    2004-01-01

    Within NASA's Project Prometheus, high specific impulse ion thrusters for electric propulsion of spacecraft for the proposed Jupiter Icy Moon Orbiter (JIMO) mission to three of Jupiter's moons: Callisto, Ganymede and Europa will require high voltage operation to meet mission propulsion. The anticipated approx.6,500 volt net ion energy will require electrical insulation and propellant isolation which must exceed that used successfully by the NASA Solar Electric Propulsion Technology Readiness (NSTAR) Deep Space 1 mission thruster by a factor of approx.6. Xenon propellant isolator prototypes that operate at near one atmosphere and prototypes that operate at low pressures (<100 Torr) have been designed and are being tested for suitability to the JIMO mission requirements. Propellant isolators must be durable to Paschen breakdown, sputter contamination, high temperature, and high voltage while operating for factors longer duration than for the Deep Space 1 Mission. Insulators used to mount the thrusters as well as those needed to support the ion optics have also been designed and are under evaluation. Isolator and insulator concepts, design issues, design guidelines, fabrication considerations and performance issues are presented. The objective of the investigation was to identify candidate isolators and insulators that are sufficiently robust to perform durably and reliably during the proposed JIMO mission.

  13. Dynamics of ionization processes in high-pressure nitrogen, air, and SF{sub 6} during a subnanosecond breakdown initiated by runaway electrons

    SciTech Connect

    Tarasenko, V. F. Beloplotov, D. V.; Lomaev, M. I.

    2015-10-15

    The dynamics of ionization processes in high-pressure nitrogen, air, and SF{sub 6} during breakdown of a gap with a nonuniform distribution of the electric field by nanosecond high-voltage pulses was studied experimentally. Measurements of the amplitude and temporal characteristics of a diffuse discharge and its radiation with a subnanosecond time resolution have shown that, at any polarity of the electrode with a small curvature radius, breakdown of the gap occurs via two ionization waves, the first of which is initiated by runaway electrons. For a voltage pulse with an ∼500-ps front, UV radiation from different zones of a diffuse discharge is measured with a subnanosecond time resolution. It is shown that the propagation velocity of the first ionization wave increases after its front has passed one-half of the gap, as well as when the pressure in the discharge chamber is reduced and/or when SF{sub 6} is replaced with air or nitrogen. It is found that, at nitrogen pressures of 0.4 and 0.7 MPa and the positive polarity of the high-voltage electrode with a small curvature radius, the ionization wave forms with a larger (∼30 ps) time delay with respect to applying the voltage pulse to the gap than at the negative polarity. The velocity of the second ionization wave propagating from the plane electrode is measured. In a discharge in nitrogen at a pressure of 0.7 MPa, this velocity is found to be ∼10 cm/ns. It is shown that, as the nitrogen pressure increases to 0.7 MPa, the propagation velocity of the front of the first ionization wave at the positive polarity of the electrode with a small curvature radius becomes lower than that at the negative polarity.

  14. Dynamics of ionization processes in high-pressure nitrogen, air, and SF6 during a subnanosecond breakdown initiated by runaway electrons

    NASA Astrophysics Data System (ADS)

    Tarasenko, V. F.; Beloplotov, D. V.; Lomaev, M. I.

    2015-10-01

    The dynamics of ionization processes in high-pressure nitrogen, air, and SF6 during breakdown of a gap with a nonuniform distribution of the electric field by nanosecond high-voltage pulses was studied experimentally. Measurements of the amplitude and temporal characteristics of a diffuse discharge and its radiation with a subnanosecond time resolution have shown that, at any polarity of the electrode with a small curvature radius, breakdown of the gap occurs via two ionization waves, the first of which is initiated by runaway electrons. For a voltage pulse with an ˜500-ps front, UV radiation from different zones of a diffuse discharge is measured with a subnanosecond time resolution. It is shown that the propagation velocity of the first ionization wave increases after its front has passed one-half of the gap, as well as when the pressure in the discharge chamber is reduced and/or when SF6 is replaced with air or nitrogen. It is found that, at nitrogen pressures of 0.4 and 0.7 MPa and the positive polarity of the high-voltage electrode with a small curvature radius, the ionization wave forms with a larger (˜30 ps) time delay with respect to applying the voltage pulse to the gap than at the negative polarity. The velocity of the second ionization wave propagating from the plane electrode is measured. In a discharge in nitrogen at a pressure of 0.7 MPa, this velocity is found to be ˜10 cm/ns. It is shown that, as the nitrogen pressure increases to 0.7 MPa, the propagation velocity of the front of the first ionization wave at the positive polarity of the electrode with a small curvature radius becomes lower than that at the negative polarity.

  15. High power thyristors with 5 kV blocking voltage. Volume 1: Development of high-voltage-thyristors (4.5 kV) with good dynamic properties

    NASA Technical Reports Server (NTRS)

    Lock, K.; Patalong, H.; Platzoeder, K.

    1979-01-01

    Using neutron irradiated silicon with considerably lower spread in resistivity as compared to conventionally doped silicon it was possible to produce power thyristors with breakdown voltages between 3.5 kV and 5.5 kV. The thyristor pellets have a diameter of 50 mm. Maximum average on-state currents of 600 to 800 A can be reached with these elements. The dynamic properties of the thryistors could be improved to allow standard applications up to maximum repetitive voltages of 4.5 kV.

  16. Ultra-High Voltage 4H-SiC Bi-Directional Insulated Gate Bipolar Transistors

    NASA Astrophysics Data System (ADS)

    Chowdhury, Sauvik

    4H- Silicon Carbide (4H-SiC) is an attractive material for power semiconductor devices due to its large bandgap, high critical electric field and high thermal conductivity compared to Silicon (Si). For ultra-high voltage applications (BV > 10 kV), 4H-SiC Insulated Gate Bipolar Transistors (IGBTs) are favored over unipolar transistors due to lower conduction losses. With improvements in SiC materials and processing technology, promising results have been demonstrated in the area of conventional unidirectional 4H-SiC IGBTs, with breakdown voltage ratings up to 27 kV. This research presents the experimental demonstration of the world's first high voltage bi-directional power transistors in 4H-SiC. Traditionally, four (two IGBTs and two diodes) or two (two reverse blocking IGBTs) semiconductor devices are necessary to yield a bidirectional switch. With a monolithically integrated bidirectional switch as presented here, the number of semiconductor devices is reduced to only one, which results in increased reliability and reduced cost of the overall system. Additionally, by using the unique dual gate operation of BD-IGBTs, switching losses can be reduced to a small fraction of that in conventional IGBTs, resulting in increased efficiency. First, the performance limits of SiC IGBTs are calculated by using analytical methods. The performance benefits of SiC IGBTs over SiC unipolar devices and Si IGBTs are quantified. Numerical simulations are used to optimize the unit cell and edge termination structures for a 15 kV SiC BD-IGBT. The effect of different device parameters on BD-IGBT static and switching performance are quantified. Second, the process technology necessary for the fabrication of high voltage SiC BD-IGBTs is optimized. The effect of different process steps on parameters such as breakdown voltage, carrier lifetime, gate oxide reliability, SiO2-SiC interface charge density is quantified. A carrier lifetime enhancement process has been optimized for lightly doped

  17. Evidence of Magnetic Breakdown on the Defects With Thermally Suppressed Critical Field in High Gradient SRF Cavities

    SciTech Connect

    Eremeev, Grigory; Palczewski, Ari

    2013-09-01

    At SRF 2011 we presented the study of quenches in high gradient SRF cavities with dual mode excitation technique. The data differed from measurements done in 80's that indicated thermal breakdown nature of quenches in SRF cavities. In this contribution we present analysis of the data that indicates that our recent data for high gradient quenches is consistent with the magnetic breakdown on the defects with thermally suppressed critical field. From the parametric fits derived within the model we estimate the critical breakdown fields.

  18. High voltage pulse ignition of mercury discharge hollow cathodes

    NASA Technical Reports Server (NTRS)

    Wintucky, E. G.

    1973-01-01

    A high voltage pulse generated by a capacitor discharge into a step-up transformer has been demonstrated capable of consistently igniting hollow cathode mercury discharges at propellant flows and heater power levels much below those required by conventional cathode starting. Results are presented for 3.2-mm diameter enclosed and open keeper cathodes. Starting characteristics are shown to depend on keeper voltage, mercury flow rate, heater power, keeper orifice size, emissive materials, and electrode to which the pulse is applied. This starting technique has been used to start a cathode over 10,000 times without any degradation of starting capability.

  19. A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pitch

    NASA Astrophysics Data System (ADS)

    Luo, Xiao-Rong; Wang, Qi; Yao, Guo-Liang; Wang, Yuan-Gang; Lei, Tian-Fei; Wang, Pei; Jiang, Yong-Heng; Zhou, Kun; Zhang, Bo

    2013-02-01

    A high voltage (> 600 V) integrable silicon-on-insulator (SOI) trench-type lateral insulated gate bipolar transistor (LIGBT) with a reduced cell-pitch is proposed. The LIGBT features multiple trenches (MTs): two oxide trenches in the drift region and a trench gate extended to the buried oxide (BOX). Firstly, the oxide trenches enhance electric field strength because of the lower permittivity of oxide than that of Si. Secondly, oxide trenches bring in multi-directional depletion, leading to a reshaped electric field distribution and an enhanced reduced-surface electric-field (RESURF) effect. Both increase the breakdown voltage (BV). Thirdly, oxide trenches fold the drift region around the oxide trenches, leading to a reduced cell-pitch. Finally, the oxide trenches enhance the conductivity modulation, resulting in a high electron/hole concentration in the drift region as well as a low forward voltage drop (Von). The oxide trenches cause a low anode—cathode capacitance, which increases the switching speed and reduces the turn-off energy loss (Eoff). The MT SOI LIGBT exhibits a BV of 603 V at a small cell-pitch of 24 μm, a Von of 1.03 V at 100 A/cm-2, a turn-off time of 250 ns and Eoff of 4.1×10-3 mJ. The trench gate extended to BOX synchronously acts as dielectric isolation between high voltage LIGBT and low voltage circuits, simplifying the fabrication processes.

  20. Deep Space One High-Voltage Bus Management

    NASA Technical Reports Server (NTRS)

    Rachocki, Ken; Nieraeth, Donald

    1999-01-01

    The design of the High Voltage Power Converter Unit on DS1 allows both the spacecraft avionics and ion propulsion to operate in a stable manner near the PPP of the solar array. This approach relies on a fairly well-defined solar array model to determine the projected PPP. The solar array voltage set-points have to be updated every week to maintain operation near PPP. Stable operation even to the LEFT of the Peak Power Point is achievable so long as you do not change the operating power level of the ion engine. The next step for this technology is to investigate the use of onboard autonomy to determine the optimum SA voltage regulation set-point (i.e. near the PPP); this is for future missions that have one or more ion propulsion subsystems.

  1. Single microchannel high-temperature fiber sensor by femtosecond laser-induced water breakdown.

    PubMed

    Liu, Yi; Qu, Shiliang; Li, Yan

    2013-02-01

    Single microchannel high-temperature fiber sensors were fabricated by drilling a microchannel across the fiber core near the end of the common single-mode fiber using femtosecond laser-induced water breakdown. Then the microchannel was annealed by the arc discharge to smooth its inwall. The two sides of microchannel and the end surface of the fiber constitute three reflective mirrors, which form a three-wave Fabry-Pérot interferometer (FPI). The fabricated FPI can be used as a high-temperature sensor in harsh environments due to its large temperature range (up to 1000°C), high linearity, miniaturized size, and perfect mechanical property.

  2. Current isolating epitaxial buffer layers for high voltage photodiode array

    DOEpatents

    Morse, Jeffrey D.; Cooper, Gregory A.

    2002-01-01

    An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

  3. Treatment of spider bites by high voltage direct current.

    PubMed

    Osborn, C D

    1991-06-01

    Between September 7, 1988, and January 15, 1991, 147 cases of confirmed (19) and suspected spider bites have been treated by high voltage direct current (HVDC) shocks. Venom damage to tissue was arrested at the time of treatment. Pain and systemic symptoms usually improved within 15 minutes. Lesion excision or grafts have not been necessary in any of the 127 cases with completed followup.

  4. [Research on sterilization of pathogens by high electrostatic voltage method].

    PubMed

    Wang, X; Wu, Y; Ni, X; Xia, B; Xu, J; Du, Q

    1992-10-01

    An experimental research has been carried out on the sterilization of four kinds of pathogens by high electrostatic method along with an inquiry into the influence of voltage waveform and the treated time on sterilization. It is concluded that pathogens can be killed efficiently by corona discharge field.

  5. High voltage electrical insulation coating for refractory materials

    NASA Technical Reports Server (NTRS)

    Lent, W. E.

    1972-01-01

    Formula and process have been developed for coating refractory metal surfaces with high voltage electrical insulation for use at temperatures to 600 C. Coatings were specifically developed as an insulation for the surface of a perforated, molybdenum, ion-accelerator grid, but are not limited to this application.

  6. Laboratory 15 kV high voltage solar array facility

    NASA Technical Reports Server (NTRS)

    Kolecki, J. C.; Gooder, S. T.

    1976-01-01

    The laboratory high voltage solar array facility is a photoelectric power generating system. Consisting of nine modules with over 23,000 solar cells, the facility is capable of delivering more than a kilowatt of power. The physical and electrical characteristics of the facility are described.

  7. The design and development of a high voltage power supply

    NASA Technical Reports Server (NTRS)

    Ting, R.

    1974-01-01

    A high voltage circuit system was redesigned, breadboarded, and tested to meet revised specification requirements. Circuit component subassemblies are described and include the firing unit, regulator, dc to dc converter, and output and trigger circuits. Design changes, tests, and equipment fabrication are outlined chronologically by month. A list of design specifications is included.

  8. [Fatal electric arc accidents due to high voltage].

    PubMed

    Strauch, Hansjürg; Wirth, Ingo

    2004-01-01

    The frequency of electric arc accidents has been successfully reduced owing to preventive measures taken by the professional association. However, the risk of accidents has continued to exist in private setting. Three fatal electric arc accidents caused by high voltage are reported with reference to the autopsy findings.

  9. High voltage gas insulated transmission line with continuous particle trapping

    DOEpatents

    Cookson, Alan H.; Dale, Steinar J.

    1983-01-01

    This invention provides a novel high voltage gas insulated transmission line utilizing insulating supports spaced at intervals with snap-in means for supporting a continuous trapping apparatus and said trapping apparatus having perforations and cutouts to facilitate trapping of contaminating particles and system flexibility.

  10. 59. View of high voltage (4160 volts alternating current) electric ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    59. View of high voltage (4160 volts alternating current) electric load center and motor control center at mezzanine level in transmitter building no. 102. - Clear Air Force Station, Ballistic Missile Early Warning System Site II, One mile west of mile marker 293.5 on Parks Highway, 5 miles southwest of Anderson, Anderson, Denali Borough, AK

  11. High-voltage compatible, full-depleted CCD

    DOEpatents

    Holland, Stephen Edward

    2007-09-18

    A charge coupled device for detecting electromagnetic and particle radiation is described. The device includes a high-resistivity semiconductor substrate, buried channel regions, gate electrode circuitry, and amplifier circuitry. For good spatial resolution and high performance, especially when operated at high voltages with full or nearly full depletion of the substrate, the device can also include a guard ring positioned near channel regions, a biased channel stop, and a biased polysilicon electrode over the channel stop.

  12. Backside optimization for improving avalanche breakdown behavior of 4.5 kV IGBT

    NASA Astrophysics Data System (ADS)

    Xiaoli, Tian; Jiang, Lu; Yuan, Teng; Wenliang, Zhang; Shuojin, Lu; Yangjun, Zhu

    2015-03-01

    The static avalanche breakdown behavior of 4.5 kV high-voltage IGBT is studied by theory analysis and experiment. The avalanche breakdown behaviors of the 4.5 kV IGBTs with different backside structures are investigated and compared by using the curve tracer. The results show that the snap back behavior of the breakdown waveform is related to the bipolar PNP gain, which leads to the deterioration of the breakdown voltage. There are two ways to optimize the backside structure, one is increasing the implant dose of the N+ buffer layer, the other is decreasing the implant dose of the P+ collector layer. It is found that the optimized structure is effective in suppressing the snap back behavior and improving the breakdown characteristic of high voltage IGBT. Project supported by the National Major Science and Technology Special Project of China (No. 2011ZX02503-003).

  13. High temperature behavior of multi-region direct current current-voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal-oxide-semiconductor field-effect-transistors reliability

    NASA Astrophysics Data System (ADS)

    He, Yandong; Zhang, Ganggang; Zhang, Xing

    2014-01-01

    With the process compatibility with the mainstream standard complementary metal-oxide-semiconductor (CMOS), shallow trench isolation (STI) based laterally diffused metal-oxide-semiconductor (LDMOS) devices have become popular for its better tradeoff between breakdown voltage and performance, especially for smart power applications. A multi-region direct current current-voltage (MR-DCIV) technique with spectroscopic features was demonstrated to map the interface state generation in the channel, accumulation and STI drift regions. High temperature behavior of MR-DCIV spectroscopy was analyzed and a physical model was verified. Degradation of STI-based LDMOS transistors under high temperature reverse bias (HTRB) stress is experimentally studied by MR-DCIV spectroscopy. The impact of interface state location on device electrical characteristics was investigated. Our results show that the major contribution to HTRB degradation, in term of the on-resistance degradation, was attributed to interface state generation under STI drift region.

  14. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage powerlines; clearances above... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad...

  15. 30 CFR 77.807 - Installation of high-voltage transmission cables.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Installation of high-voltage transmission... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807 Installation of high-voltage transmission cables. High-voltage transmission cables shall be installed or placed so as to afford...

  16. 30 CFR 75.810 - High-voltage trailing cables; splices.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables; splices. 75.810... SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.810 High-voltage trailing cables; splices. In the case of high-voltage cables used as...

  17. 30 CFR 75.833 - Handling high-voltage trailing cables.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Handling high-voltage trailing cables. 75.833... High-Voltage Longwalls § 75.833 Handling high-voltage trailing cables. (a) Cable handling. (1) Miners must not handle energized trailing cables unless they are wearing high-voltage insulating gloves, which...

  18. 30 CFR 75.833 - Handling high-voltage trailing cables.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Handling high-voltage trailing cables. 75.833... High-Voltage Longwalls § 75.833 Handling high-voltage trailing cables. (a) Cable handling. (1) Miners must not handle energized trailing cables unless they are wearing high-voltage insulating gloves, which...

  19. 30 CFR 75.833 - Handling high-voltage trailing cables.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Handling high-voltage trailing cables. 75.833... High-Voltage Longwalls § 75.833 Handling high-voltage trailing cables. (a) Cable handling. (1) Miners must not handle energized trailing cables unless they are wearing high-voltage insulating gloves, which...

  20. 30 CFR 75.833 - Handling high-voltage trailing cables.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Handling high-voltage trailing cables. 75.833... High-Voltage Longwalls § 75.833 Handling high-voltage trailing cables. (a) Cable handling. (1) Miners must not handle energized trailing cables unless they are wearing high-voltage insulating gloves, which...