Conductive and robust nitride buffer layers on biaxially textured substrates

DOEpatents

Sankar, Sambasivan; Goyal, Amit; Barnett, Scott A.; Kim, Ilwon; Kroeger, Donald M.

2004-08-31

The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metal and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.

Method for producing highly conformal transparent conducting oxides

DOEpatents

Elam, Jeffrey W.; Mane, Anil U.

2016-07-26

A method for forming a transparent conducting oxide product layer. The method includes use of precursors, such as tetrakis-(dimethylamino) tin and trimethyl indium, and selected use of dopants, such as SnO and ZnO for obtaining desired optical, electrical and structural properties for a highly conformal layer coating on a substrate. Ozone was also input as a reactive gas which enabled rapid production of the desired product layer.

Method of making a layered composite electrode/electrolyte

DOEpatents

Visco, Steven J.; Jacobson, Craig P.; DeJonghe, Lutgard C.

2005-01-25

An electrode/electrolyte structure is prepared by a plurality of methods. An unsintered (possibly bisque fired) moderately catalytic electronically-conductive or homogeneous mixed ionic electronic conductive electrode material is deposited on a layer composed of a sintered or unsintered ionically-conductive electrolyte material prior to being sintered. A layer of particulate electrode material is deposited on an unsintered ("green") layer of electrolyte material and the electrode and electrolyte layers are sintered simultaneously, sometimes referred to as "co-firing," under conditions suitable to fully densify the electrolyte while the electrode retains porosity. Or, the layer of particulate electrode material is deposited on a previously sintered layer of electrolyte, and then sintered. Subsequently, a catalytic material is added to the electrode structure by infiltration of an electrolcatalyst precursor (e.g., a metal salt such as a transition metal nitrate). This may be followed by low temperature firing to convert the precursor to catalyst. The invention allows for an electrode with high electronic conductivity and sufficient catalytic activity to achieve high power density in an ionic (electrochemical) device such as fuel cells and electrolytic gas separation systems.

High proton conductivity in the molecular interlayer of a polymer nanosheet multilayer film.

PubMed

Sato, Takuma; Hayasaka, Yuta; Mitsuishi, Masaya; Miyashita, Tokuji; Nagano, Shusaku; Matsui, Jun

2015-05-12

High proton conductivity was achieved in a polymer multilayer film with a well-defined two-dimensional lamella structure. The multilayer film was prepared by deposition of poly(N-dodecylacryamide-co-acrylic acid) (p(DDA/AA)) monolayers onto a solid substrate using the Langmuir-Blodgett technique. Grazing-angle incidence X-ray diffraction measurement of a 30-layer film of p(DDA/AA) showed strong diffraction peaks in the out-of-plane direction at 2θ = 2.26° and 4.50°, revealing that the multilayer film had a highly uniform layered structure with a monolayer thickness of 2.0 nm. The proton conductivity of the p(DDA/AA) multilayer film parallel to the layer plane direction was 0.051 S/cm at 60 °C and 98% relative humidity with a low activation energy of 0.35 eV, which is comparable to perfluorosulfonic acid membranes. The high conductivity and low activation energy resulted from the formation of uniform two-dimensional proton-conductive nanochannels in the hydrophilic regions of the multilayer film. The proton conductivity of the multilayer film perpendicular to the layer plane was determined to be 2.1 × 10(-13) S/cm. Therefore, the multilayer film showed large anisotropic conductivity with an anisotropic ratio of 2.4 × 10(11).

Layered CU-based electrode for high-dielectric constant oxide thin film-based devices

DOEpatents

Auciello, Orlando

2010-05-11

A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.

Method of forming a dense, high temperature electronically conductive composite layer on a porous ceramic substrate

DOEpatents

Isenberg, A.O.

1992-04-21

An electrochemical device, containing a solid oxide electrolyte material and an electrically conductive composite layer, has the composite layer attached by: (A) applying a layer of LaCrO[sub 3], YCrO[sub 3] or LaMnO[sub 3] particles, on a portion of a porous ceramic substrate, (B) heating to sinter bond the particles to the substrate, (C) depositing a dense filler structure between the doped particles, (D) shaving off the top of the particles, and (E) applying an electronically conductive layer over the particles as a contact. 7 figs.

Surface conductance of graphene from non-contact resonant cavity.

PubMed

Obrzut, Jan; Emiroglu, Caglar; Kirillov, Oleg; Yang, Yanfei; Elmquist, Randolph E

2016-06-01

A method is established to reliably determine surface conductance of single-layer or multi-layer atomically thin nano-carbon graphene structures. The measurements are made in an air filled standard R100 rectangular waveguide configuration at one of the resonant frequency modes, typically at TE 103 mode of 7.4543 GHz. Surface conductance measurement involves monitoring a change in the quality factor of the cavity as the specimen is progressively inserted into the cavity in quantitative correlation with the specimen surface area. The specimen consists of a nano-carbon-layer supported on a low loss dielectric substrate. The thickness of the conducting nano-carbon layer does not need to be explicitly known, but it is assumed that the lateral dimension is uniform over the specimen area. The non-contact surface conductance measurements are illustrated for a typical graphene grown by chemical vapor deposition process, and for a high quality monolayer epitaxial graphene grown on silicon carbide wafers for which we performed non-gated quantum Hall resistance measurements. The sequence of quantized transverse Hall resistance at the Landau filling factors ν = ±6 and ±2, and the absence of the Hall plateau at ν = 4 indicate that the epitaxially grown graphene is a high quality mono-layer. The resonant microwave cavity measurement is sensitive to the surface and bulk conductivity, and since no additional processing is required, it preserves the integrity of the conductive graphene layer. It allows characterization with high speed, precision and efficiency, compared to transport measurements where sample contacts must be defined and applied in multiple processing steps.

Highly efficient monolithic dye-sensitized solar cells.

PubMed

Kwon, Jeong; Park, Nam-Gyu; Lee, Jun Young; Ko, Min Jae; Park, Jong Hyeok

2013-03-01

Monolithic dye-sensitized solar cells (M-DSSCs) provide an effective way to reduce the fabrication cost of general DSSCs since they do not require transparent conducting oxide substrates for the counter electrode. However, conventional monolithic devices have low efficiency because of the impediments resulting from counter electrode materials and spacer layers. Here, we demonstrate highly efficient M-DSSCs featuring a highly conductive polymer combined with macroporous polymer spacer layers. With M-DSSCs based on a PEDOT/polymer spacer layer, a power conversion efficiency of 7.73% was achieved, which is, to the best of our knowledge, the highest efficiency for M-DSSCs to date. Further, PEDOT/polymer spacer layers were applied to flexible DSSCs and their cell performance was investigated.

Carbon-Nanotube Conductive Layers for Thin-Film Solar Cells

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.

2005-01-01

Thin, transparent layers comprising mats of carbon nanotubes have been proposed for providing lateral (that is, inplane) electrical conductivities for collecting electric currents from the front surfaces of the emitter layers of thin-film solar photovoltaic cells. Traditionally, thin, semitransparent films of other electrically conductive materials (usually, indium tin oxide, zinc oxide, or cadmium sulfide) have been used for this purpose. As in the cases of the traditional semitransparent conductive films, the currents collected by the nanotube layers would, in turn, be further collected by front metal contact stripes. Depending on details of a specific solar-cell design, the layer of carbon nanotubes would be deposited in addition to, or instead of, a semitransparent layer of one of these traditional conductive materials (see figure). The proposal is expected to afford the following advantages: The electrical conductivity of the carbon- nanotube layer would exceed that of the corresponding semitransparent layer of traditional electrically conductive material. The greater electrical conductivity of the carbon-nanotube layer would make it possible to retain adequate lateral electrical conductivity while reducing the thickness of, or eliminating entirely, the traditional semitransparent conductive layer. As a consequence of thinning or elimination of the traditional semitransparent conductive layer, less light would be absorbed, so that more of the incident light would be available for photovoltaic conversion. The greater electrical conductivity of the carbon-nanotube layer would make it possible to increase the distance between front metal contact stripes, in addition to (or instead of) thinning or eliminating the layer of traditional semitransparent conductive material. Consequently, the fraction of solar-cell area shadowed by front metal contact stripes would be reduced again, making more of the incident light available for photovoltaic conversion. The electrical conductivities of individual carbon nanotubes can be so high that the mat of carbon nanotubes could be made sparse enough to be adequately transparent while affording adequate lateral electrical conductivity of the mat as a whole. The thickness of the nanotube layer would be chosen so that the layer would contribute significant lateral electrical conductivity, yet would be as nearly transparent as possible to incident light. A typical thickness for satisfying these competing requirements is expected to lie between 50 and 100 nm. The optimum thickness must be calculated by comparing the lateral electrical conductivity, the distance between front metal stripes, and the amount of light lost by absorption in the nanotube layer.

Hierarchical Architecturing for Layered Thermoelectric Sulfides and Chalcogenides.

PubMed

Jood, Priyanka; Ohta, Michihiro

2015-03-16

Sulfides are promising candidates for environment-friendly and cost-effective thermoelectric materials. In this article, we review the recent progress in all-length-scale hierarchical architecturing for sulfides and chalcogenides, highlighting the key strategies used to enhance their thermoelectric performance. We primarily focus on TiS₂-based layered sulfides, misfit layered sulfides, homologous chalcogenides, accordion-like layered Sn chalcogenides, and thermoelectric minerals. CS₂ sulfurization is an appropriate method for preparing sulfide thermoelectric materials. At the atomic scale, the intercalation of guest atoms/layers into host crystal layers, crystal-structural evolution enabled by the homologous series, and low-energy atomic vibration effectively scatter phonons, resulting in a reduced lattice thermal conductivity. At the nanoscale, stacking faults further reduce the lattice thermal conductivity. At the microscale, the highly oriented microtexture allows high carrier mobility in the in-plane direction, leading to a high thermoelectric power factor.

Hierarchical Architecturing for Layered Thermoelectric Sulfides and Chalcogenides

PubMed Central

Jood, Priyanka; Ohta, Michihiro

2015-01-01

Sulfides are promising candidates for environment-friendly and cost-effective thermoelectric materials. In this article, we review the recent progress in all-length-scale hierarchical architecturing for sulfides and chalcogenides, highlighting the key strategies used to enhance their thermoelectric performance. We primarily focus on TiS2-based layered sulfides, misfit layered sulfides, homologous chalcogenides, accordion-like layered Sn chalcogenides, and thermoelectric minerals. CS2 sulfurization is an appropriate method for preparing sulfide thermoelectric materials. At the atomic scale, the intercalation of guest atoms/layers into host crystal layers, crystal-structural evolution enabled by the homologous series, and low-energy atomic vibration effectively scatter phonons, resulting in a reduced lattice thermal conductivity. At the nanoscale, stacking faults further reduce the lattice thermal conductivity. At the microscale, the highly oriented microtexture allows high carrier mobility in the in-plane direction, leading to a high thermoelectric power factor. PMID:28787992

Conductive and robust nitride buffer layers on biaxially textured substrates

DOEpatents

Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

2009-03-31

The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

Method of forming a dense, high temperature electronically conductive composite layer on a porous ceramic substrate

DOEpatents

Isenberg, Arnold O.

1992-01-01

An electrochemical device, containing a solid oxide electrolyte material and an electrically conductive composite layer, has the composite layer attached by: (A) applying a layer of LaCrO.sub.3, YCrO.sub.3 or LaMnO.sub.3 particles (32), on a portion of a porous ceramic substrate (30), (B) heating to sinter bond the particles to the substrate, (C) depositing a dense filler structure (34) between the doped particles (32), (D) shaving off the top of the particles, and (E) applying an electronically conductive layer over the particles (32) as a contact.

Alternating gradient photodetector

NASA Technical Reports Server (NTRS)

Overhauser, Albert W. (Inventor); Maserjian, Joseph (Inventor)

1989-01-01

A far infrared (FIR) range responsive photodetector is disclosed. There is a substrate of degenerate germanium. A plurality of alternating impurity-band and high resistivity layers of germanium are disposed on the substrate. The impurity-band layers have a doping concentration therein sufficiently high to include donor bands which can release electrons upon impingement by FIR photons of energy hv greater than an energy gap epsilon. The high resistivity layers have a doping concentration therein sufficiently low as to not include conducting donor bands and are depleted of electrons. Metal contacts are provided for applying an electrical field across the substrate and the plurality of layers. In the preferred embodiment as shown, the substrate is degenerate n-type (N++) germanium; the impurity-band layers are n+ layers of germanium doped to approximately the low 10(exp 16)/cu cm range; and, the high resistivity layers are n-layers of germanium doped to a maximum of approximately 10(exp)/cu cm. Additionally, the impurity-band layers have a thickness less than a conduction-electron diffusion length in germanium and likely to be in the range of 0.1 to 1.0 micron, the plurality of impurity-bands is of a number such that the flux of FIR photons passing therethrough will be substantially totally absorbed therein, the thickness of the high resistivity layers is such compared to the voltage applied that the voltage drop in each the high resistivity layers controls the occurence of impact ionization in the impurity-band layers to a desired level.

The Diamond Window with Boron-Doped Layers for the Output of Microwave Radiation at High Peak and Average Power Levels

NASA Astrophysics Data System (ADS)

Ivanov, O. A.; Kuzikov, S. V.; Vikharev, A. A.; Vikharev, A. L.; Lobaev, M. A.

2017-10-01

We propose a novel design of the barrier window for the output of microwave radiation at high peak and average power levels. A window based on a plate of polycrystalline CVD diamond with thin (nanometer-thick) boron-doped layers with increased conductivity is considered. Such a window, which retains the low radiation loss due to the small total thickness of the conductive layers and the high thermal conductivity inherent in diamond, prevents accumulation of a static charge on its surface, on the one hand, and allows one to produce a static electric field on the surface of the doped layer, which impedes the development of a multipactor discharge, on the other hand. In this case, a high level of the power of the transmitted radiation and a large passband width are ensured by choosing the configuration of the field in the form of a traveling wave inside the window.

Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device

NASA Astrophysics Data System (ADS)

Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen

2018-04-01

Ta5Si3-based conductive bridge random access memory (CBRAM) devices have been investigated to improve their resistive switching characteristics for their application in future nonvolatile memory technology. Changes in the switching characteristics by the addition of a thin Al2O3 layer of different thicknesses at the bottom electrode interface of a Ta5Si3-based CBRAM devices have been studied. The double-layer device with a 1 nm Al2O3 layer has shown improved resistive switching characteristics over the single layer one with a high on/off resistance ratio of 102, high endurance of more than 104 cycles, and good retention for more than 105 s at the temperature of 130 °C. The higher thermal conductivity of Al2O3 over Ta5Si3 has been attributed to the enhanced switching properties of the double-layer devices.

Electrically Conductive Polyimide Films Containing Gold Surface

NASA Technical Reports Server (NTRS)

Caplan, Maggie L.; Stoakley, Diane M.; St. Clair, Anne K.

1994-01-01

Polyimide films exhibiting high thermo-oxidative stability and including electrically conductive surface layers containing gold made by casting process. Many variations of basic process conditions, ingredients, and sequence of operations possible, and not all resulting versions of process yield electrically conductive films. Gold-containing layer formed on film surface during cure. These metallic gold-containing polyimides used in film and coating applications requiring electrical conductivity, high reflectivity, exceptional thermal stability, and/or mechanical integrity. They also find commercial potential in areas ranging from thin films for satellite antennas to decorative coatings and packaging.

One-stage pulsed laser deposition of conductive zinc oxysulfide layers

NASA Astrophysics Data System (ADS)

Bereznev, Sergei; Kocharyan, Hrachya; Maticiuc, Natalia; Naidu, Revathi; Volobujeva, Olga; Tverjanovich, Andrey; Kois, Julia

2017-12-01

Zinc oxysulfide - Zn(O,S) is one of the prospective materials for substitution of conventional CdS buffer layer in complete optoelectronic devices due to its optimal bandgap and low toxicity. In this work Zn(O,S) thin films have been prepared by one-step pulsed laser deposition technique. The films with a thickness of 650 nm were deposited onto the FTO/glass substrates at different substrate temperatures from room temperature to 400 °C. Zn(O,S) layers were characterized by means of scanning electron microscopy, energy dispersive spectroscopy, Raman, X-ray diffraction, UV-vis spectroscopy and Van der Pauw technique. It was found, that obtained Zn(O,S) layers are mainly polycrystalline, highly uniform, transparent, electrically conductive and demonstrate good adhesion to the FTO/glass substrates. In addition, we show that elemental composition of PLD Zn(O,S) films depends on the substrate temperature. For the first time high quality single phase conductive Zn(O,S) layers were prepared by one stage PLD in high vacuum at relatively low temperature 200 °C without any post treatment. The properties of prepared Zn(O,S) films suggest that these films can be applied as buffer layer in optoelectronic devices.

Few-Layer MXenes Delaminated via High-Energy Mechanical Milling for Enhanced Sodium-Ion Batteries Performance.

PubMed

Wu, Yuting; Nie, Ping; Wang, Jiang; Dou, Hui; Zhang, Xiaogang

2017-11-15

The global availability of sodium makes the exploration of superior sodium-ion batteries attractive for energy storage application. MXenes, as one of the most promising anodes for sodium-ion batteries, have been reported to have many advantages, such as high electronic conductivity and a hydrophilic surface. However, the compact multilayer structure and deficient delamination significantly inhibits their application, requiring high energy and showing decreased storage capacity and poor rate capabilities. Few-layer MXene has been proved to benefit superior electrochemical properties with a better ionic conductivity and two-dimensional layer structure. Herein, we report scale delamination of few-layer MXene nanosheets as anodes for sodium-ion batteries, which are prepared via an organic solvent assist high-energy mechanical-milling method. This approach efficiently prevents the oxidation of MXene and produces few-layer nanosheets structure, facilitating fast electron transport and Na + diffusion. Electrochemical tests demonstrate that the few-layer MXenes show high specific capacity, excellent cycle stability, and good rate performance. Specifically, few-layer MXene nanosheets deliver a high reversible capacity of 267 mA h g -1 at a current density of 0.1 A g -1 . After cycling 1500 cycles at a high rate of 1 A g -1 , a reversible capacity of 76 mA h g -1 could be maintained.

Making Complex Electrically Conductive Patterns on Cloth

NASA Technical Reports Server (NTRS)

Chu, Andrew; Fink, Patrick W.; Dobbins, Justin A.; Lin, Greg Y.; Scully, Robert C.; Trevino, Robert

2008-01-01

A method for automated fabrication of flexible, electrically conductive patterns on cloth substrates has been demonstrated. Products developed using this method, or related prior methods, are instances of a technology known as 'e-textiles,' in which electrically conductive patterns ar formed in, and on, textiles. For many applications, including high-speed digital circuits, antennas, and radio frequency (RF) circuits, an e-textile method should be capable of providing high surface conductivity, tight tolerances for control of characteristic impedances, and geometrically complex conductive patterns. Unlike prior methods, the present method satisfies all three of these criteria. Typical patterns can include such circuit structures as RF transmission lines, antennas, filters, and other conductive patterns equivalent to those of conventional printed circuits. The present method overcomes the limitations of the prior methods for forming the equivalent of printed circuits on cloth. A typical fabrication process according to the present method involves selecting the appropriate conductive and non-conductive fabric layers to build the e-textile circuit. The present method uses commercially available woven conductive cloth with established surface conductivity specifications. Dielectric constant, loss tangent, and thickness are some of the parameters to be considered for the non-conductive fabric layers. The circuit design of the conductive woven fabric is secured onto a non-conductive fabric layer using sewing, embroidery, and/or adhesive means. The portion of the conductive fabric that is not part of the circuit is next cut from the desired circuit using an automated machine such as a printed-circuit-board milling machine or a laser cutting machine. Fiducials can be used to align the circuit and the cutting machine. Multilayer circuits can be built starting with the inner layer and using conductive thread to make electrical connections between layers.

High voltage photo switch package module

DOEpatents

Sullivan, James S; Sanders, David M; Hawkins, Steven A; Sampayan, Stephen E

2014-02-18

A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces, and at least one light-input surface. First metallic layers are formed on the electrode-interface surfaces, and one or more optical waveguides having input and output ends are bonded to the substrate so that the output end of each waveguide is bonded to a corresponding one of the light-input surfaces of the photo-conductive substrate. This forms a waveguide-substrate interface for coupling light into the photo-conductive wafer. A dielectric material such as epoxy is then used to encapsulate the photo-conductive substrate and optical waveguide so that only the metallic layers and the input end of the optical waveguide are exposed. Second metallic layers are then formed on the first metallic layers so that the waveguide-substrate interface is positioned under the second metallic layers.

Structural tuning of residual conductivity in highly mismatched III-V layers

DOEpatents

Han, Jung; Figiel, Jeffrey J.

2002-01-01

A new process to control the electrical conductivity of gallium nitride layers grown on a sapphire substrate has been developed. This process is based on initially coating the sapphire substrate with a thin layer of aluminum nitride, then depositing the gallium nitride thereon. This process allows one to controllably produce gallium nitride layers with resistivity varying over as much as 10 orders of magnitude, without requiring the introduction and activation of suitable dopants.

Influence of carbon conductive additives on electrochemical double-layer supercapacitor parameters

NASA Astrophysics Data System (ADS)

Kiseleva, E. A.; Zhurilova, M. A.; Kochanova, S. A.; Shkolnikov, E. J.; Tarasenko, A. B.; Zaitseva, O. V.; Uryupina, O. V.; Valyano, G. V.

2018-01-01

Electrochemical double-layer capacitors (EDLC) offer energy storage technology, highly demanded for rapid transition processes in transport and stationary applications, concerned with fast power fluctuations. Rough structure of activated carbon, widely used as electrode material because of its high specific area, leads to poor electrode conductivity. Therefore there is the need for conductive additive to decrease internal resistance and to achieve high specific power and high specific energy. Usually carbon blacks are widely used as conductive additive. In this paper electrodes with different conductive additives—two types of carbon blacks and single-walled carbon nanotubes—were prepared and characterized in organic electrolyte-based EDLC cells. Electrodes are based on original wood derived activated carbon produced by potassium hydroxide high-temperature activation at Joint Institute for High Temperatures RAS. Electrodes were prepared from slurry by cold-rolling. For electrode characterization cyclic voltammetry, impedance spectra analysis, equivalent series resistance measurements and galvanostatic charge-discharge were used.

Integrated power passives

NASA Technical Reports Server (NTRS)

Xie, Huikai (Inventor); Ngo, Khai D. T. (Inventor)

2013-01-01

A multi-layer film-stack and method for forming the multilayer film-stack is given where a series of alternating layers of conducting and dielectric materials are deposited such that the conducting layers can be selectively addressed. The use of the method to form integratable high capacitance density capacitors and complete the formation of an integrated power system-on-a-chip device including transistors, conductors, inductors, and capacitors is also given.

Superwettability-Induced Confined Reaction toward High-Performance Flexible Electrodes.

PubMed

Xiong, Weiwei; Liu, Hongliang; Zhou, Yahong; Ding, Yi; Zhang, Xiqi; Jiang, Lei

2016-05-18

To find a general strategy to realize confinement of the conductive layer for high-performance flexible electrodes, with improved interfacial adhesion and high conductivity, is of important scientific significance. In this work, superwettability-induced confined reaction is used to fabricate high-performance flexible Ag/polymer electrodes, showing significantly improved silver conversion efficiency and interfacial adhesion. The as-prepared flexible electrodes by superhydrophilic polymeric surface under oil are highly conductive with an order of magnitude higher than the Ag/polymer electrodes obtained from original polymeric surface. The high conductivity achieved via superhydrophilic confinement is ascribed to the fact that the superhydrophilic polymeric surface can enhance the reaction rate of silver deposition and reduce the size of silver nanoparticles to achieve the densest packing. This new approach will provide a simple method to fabricate flexible and highly conductive Ag/polymer electrodes with excellent adhesion between the conductive layer and the substrate, and can be extended to other metal/polymeric electrodes or alloy/polymeric electrodes.

Current isolating epitaxial buffer layers for high voltage photodiode array

DOEpatents

Morse, Jeffrey D.; Cooper, Gregory A.

2002-01-01

An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

Low temperature platinum atomic layer deposition on nylon-6 for highly conductive and catalytic fiber mats

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mundy, J. Zachary; Shafiefarhood, Arya; Li, Fanxing

2016-01-15

Low temperature platinum atomic layer deposition (Pt-ALD) via (methylcyclopentadienyl)trimethyl platinum and ozone (O{sub 3}) is used to produce highly conductive nonwoven nylon-6 (polyamide-6, PA-6) fiber mats, having effective conductivities as high as ∼5500–6000 S/cm with only a 6% fractional increase in mass. The authors show that an alumina ALD nucleation layer deposited at high temperature is required to promote Pt film nucleation and growth on the polymeric substrate. Fractional mass gain scales linearly with Pt-ALD cycle number while effective conductivity exhibits a nonlinear trend with cycle number, corresponding to film coalescence. Field-emission scanning electron microscopy reveals island growth mode ofmore » the Pt film at low cycle number with a coalesced film observed after 200 cycles. The metallic coating also exhibits exceptional resistance to mechanical flexing, maintaining up to 93% of unstressed conductivity after bending around cylinders with radii as small as 0.3 cm. Catalytic activity of the as-deposited Pt film is demonstrated via carbon monoxide oxidation to carbon dioxide. This novel low temperature processing allows for the inclusion of highly conductive catalytic material on a number of temperature-sensitive substrates with minimal mass gain for use in such areas as smart textiles and flexible electronics.« less

High performance diamond-like carbon layers obtained by pulsed laser deposition for conductive electrode applications

NASA Astrophysics Data System (ADS)

Stock, F.; Antoni, F.; Le Normand, F.; Muller, D.; Abdesselam, M.; Boubiche, N.; Komissarov, I.

2017-09-01

For the future, one of the biggest challenge faced to the technologies of flat panel display and various optoelectronic and photovoltaic devices is to find an alternative to the use of transparent conducting oxides like ITO. In this new approach, the objective is to grow high conductive thin-layer graphene (TLG) on the top of diamond-like carbon (DLC) layers presenting high performance. DLC prepared by pulsed laser deposition (PLD) have attracted special interest due to a unique combination of their properties, close to those of monocrystalline diamond, like its transparency, hardness and chemical inertia, very low roughness, hydrogen-free and thus high thermal stability up to 1000 K. In our future work, we plane to explore the synthesis of conductive TLG on top of insulating DLC thin films. The feasibility and obtained performances of the multi-layered structure will be explored in great details in the short future to develop an alternative to ITO with comparable performance (conductivity of transparency). To select the best DLC candidate for this purpose, we focus this work on the physicochemical properties of the DLC thin films deposited by PLD from a pure graphite target at two wavelengths (193 and 248 nm) at various laser fluences. A surface graphenization process, as well as the required efficiency of the complete structure (TLG/DLC) will clearly be related to the DLC properties, especially to the initial sp3/sp2 hybridization ratio. Thus, an exhaustive description of the physicochemical properties of the DLC layers is a fundamental step in the research of comparable performance to ITO.

Highly electrically conductive layered carbon derived from polydopamine and its functions in SnO2-based lithium ion battery anodes.

PubMed

Kong, Junhua; Yee, Wu Aik; Yang, Liping; Wei, Yuefan; Phua, Si Lei; Ong, Hock Guan; Ang, Jia Ming; Li, Xu; Lu, Xuehong

2012-10-25

Thin carbonized polydopamine (C-PDA) coatings are found to have similar structures and electrical conductivities to those of multilayered graphene doped with heteroatoms. Greatly enhanced electrochemical properties are achieved with C-PDA-coated SnO(2) nanoparticles where the coating functions as a mechanical buffer layer and conducting bridge.

Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials

PubMed Central

Yamasaka, Shuto; Watanabe, Kentaro; Sakane, Shunya; Takeuchi, Shotaro; Sakai, Akira; Sawano, Kentarou; Nakamura, Yoshiaki

2016-01-01

The high electrical and drastically-low thermal conductivities, a vital goal for high performance thermoelectric (TE) materials, are achieved in Si-based nanoarchitecture composed of Si channel layers and epitaxial Ge nanodots (NDs) with ultrahigh areal density (~1012 cm−2). In this nanoarchitecture, the ultrasmall NDs and Si channel layers play roles of phonon scattering sources and electrical conduction channels, respectively. Electron conductivity in n-type nanoacrhitecture shows high values comparable to those of epitaxial Si films despite the existence of epitaxial NDs. This is because Ge NDs mainly scattered not electrons but phonons selectively, which could be attributed to the small conduction band offset at the epitaxially-grown Si/Ge interface and high transmission probability through stacking faults. These results demonstrate an independent control of thermal and electrical conduction for phonon-glass electron-crystal TE materials by nanostructure designing and the energetic and structural interface control. PMID:26973092

Thermal conductivity and thermal boundary resistance of atomic layer deposited high-k dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon

NASA Astrophysics Data System (ADS)

Scott, Ethan A.; Gaskins, John T.; King, Sean W.; Hopkins, Patrick E.

2018-05-01

The need for increased control of layer thickness and uniformity as device dimensions shrink has spurred increased use of atomic layer deposition (ALD) for thin film growth. The ability to deposit high dielectric constant (high-k) films via ALD has allowed for their widespread use in a swath of optical, optoelectronic, and electronic devices, including integration into CMOS compatible platforms. As the thickness of these dielectric layers is reduced, the interfacial thermal resistance can dictate the overall thermal resistance of the material stack compared to the resistance due to the finite dielectric layer thickness. Time domain thermoreflectance is used to interrogate both the thermal conductivity and the thermal boundary resistance of aluminum oxide, hafnium oxide, and titanium oxide films on silicon. We calculate a representative design map of effective thermal resistances, including those of the dielectric layers and boundary resistances, as a function of dielectric layer thickness, which will be of great importance in predicting the thermal resistances of current and future devices.

Organic-inorganic proximity effect in the magneto-conductance of vertical organic field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khachatryan, B.; Devir-Wolfman, A. H.; Ehrenfreund, E., E-mail: eitane@technion.ac.il

Vertical organic field effect transistors having a patterned source electrode and an a-SiO{sub 2} insulation layer show high performance as a switching element with high transfer characteristics. By measuring the low field magneto-conductance under ambient conditions at room temperature, we show here that the proximity of the inorganic a-SiO{sub 2} insulation to the organic conducting channel affects considerably the magnetic response. We propose that in n-type devices, electrons in the organic conducting channel and spin bearing charged defects in the inorganic a-SiO{sub 2} insulation layer (e.g., O{sub 2} = Si{sup +·}) form oppositely charged spin pairs whose singlet-triplet spin configurations are mixedmore » through the relatively strong hyperfine field of {sup 29}Si. By increasing the contact area between the insulation layer and the conducting channel, the ∼2% magneto-conductance response may be considerably enhanced.« less

The influence of titanium adhesion layer oxygen stoichiometry on thermal boundary conductance at gold contacts

NASA Astrophysics Data System (ADS)

Olson, David H.; Freedy, Keren M.; McDonnell, Stephen J.; Hopkins, Patrick E.

2018-04-01

We experimentally demonstrate the role of oxygen stoichiometry on the thermal boundary conductance across Au/TiOx/substrate interfaces. By evaporating two different sets of Au/TiOx/substrate samples under both high vacuum and ultrahigh vacuum conditions, we vary the oxygen composition in the TiOx layer from 0 ≤ x ≤ 2.85. We measure the thermal boundary conductance across the Au/TiOx/substrate interfaces with time-domain thermoreflectance and characterize the interfacial chemistry with x-ray photoemission spectroscopy. Under high vacuum conditions, we speculate that the environment provides a sufficient flux of oxidizing species to the sample surface such that one essentially co-deposits Ti and these oxidizing species. We show that slower deposition rates correspond to a higher oxygen content in the TiOx layer, which results in a lower thermal boundary conductance across the Au/TiOx/substrate interfacial region. Under the ultrahigh vacuum evaporation conditions, pure metallic Ti is deposited on the substrate surface. In the case of quartz substrates, the metallic Ti reacts with the substrate and getters oxygen, leading to a TiOx layer. Our results suggest that Ti layers with relatively low oxygen compositions are best suited to maximize the thermal boundary conductance.

Ambient-Stable and Durable Conductive Ag-Nanowire-Network 2-D Films Decorated with a Ti Layer.

PubMed

Kim, Yoon-Mi; Hwang, Bu-Yeon; Lee, Ki-Wook; Kim, Jin-Yeol

2018-05-11

Highly stable and durable conductive silver nanowire (Ag NW) network electrode films were prepared through decoration with a 5-nm-thick Ti layer. The Ag NW network 2-D films showed sheet resistance values as low as 32 ohm/sq at 88% transparency when decorated with Ti. These 2-D films exhibited a 30% increase in electrical conductivity while maintaining good stability of the films through enhanced resistance to moisture and oxygen penetration as a result of the protective effect of the Ti layer.

High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

NASA Astrophysics Data System (ADS)

Ahn, Min-Ju; Cho, Won-Ju

2017-10-01

In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

Pushing the Limits: 3D Layer-by-Layer-Assembled Composites for Cathodes with 160 C Discharge Rates.

PubMed

Mo, Runwei; Tung, Siu On; Lei, Zhengyu; Zhao, Guangyu; Sun, Kening; Kotov, Nicholas A

2015-05-26

Deficiencies of cathode materials severely limit cycling performance and discharge rates of Li batteries. The key problem is that cathode materials must combine multiple properties: high lithium ion intercalation capacity, electrical/ionic conductivity, porosity, and mechanical toughness. Some materials revealed promising characteristics in a subset of these properties, but attaining the entire set of often contrarian characteristics requires new methods of materials engineering. In this paper, we report high surface area 3D composite from reduced graphene oxide loaded with LiFePO4 (LFP) nanoparticles made by layer-by-layer assembly (LBL). High electrical conductivity of the LBL composite is combined with high ionic conductivity, toughness, and low impedance. As a result of such materials properties, reversible lithium storage capacity and Coulombic efficiency were as high as 148 mA h g(-1) and 99%, respectively, after 100 cycles at 1 C. Moreover, these composites enabled unusually high reversible charge-discharge rates up to 160 C with a storage capacity of 56 mA h g(-1), exceeding those of known LFP-based cathodes, some of them by several times while retaining high content of active cathode material. The study demonstrates that LBL-assembled composites enable resolution of difficult materials engineering tasks.

High conductivity and transparent aluminum-based multi-layer source/drain electrodes for thin film transistors

NASA Astrophysics Data System (ADS)

Yao, Rihui; Zhang, Hongke; Fang, Zhiqiang; Ning, Honglong; Zheng, Zeke; Li, Xiaoqing; Zhang, Xiaochen; Cai, Wei; Lu, Xubing; Peng, Junbiao

2018-02-01

In this study, high conductivity and transparent multi-layer (AZO/Al/AZO-/Al/AZO) source/drain (S/D) electrodes for thin film transistors were fabricated via conventional physical vapor deposition approaches, without toxic elements or further thermal annealing process. The 68 nm-thick multi-layer films with excellent optical properties (transparency: 82.64%), good electrical properties (resistivity: 6.64  ×  10-5 Ω m, work function: 3.95 eV), and superior surface roughness (R q   =  0.757 nm with scanning area of 5  ×  5 µm2) were fabricated as the S/D electrodes. Significantly, comprehensive performances of AZO films are enhanced by the insertion of ultra-thin Al layers. The optimal transparent TFT with this multi-layer S/D electrodes exhibited a decent electrical performance with a saturation mobility (µ sat) of 3.2 cm2 V-1 s-1, an I on/I off ratio of 1.59  ×  106, a subthreshold swing of 1.05 V/decade. The contact resistance of AZO/Al/AZO/Al/AZO multi-layer electrodes is as low as 0.29 MΩ. Moreover, the average visible light transmittance of the unpatterned multi-layers constituting a whole transparent TFT could reach 72.5%. The high conductivity and transparent multi-layer S/D electrodes for transparent TFTs possessed great potential for the applications of the green and transparent displays industry.

Enhancing electrical conductivity of room temperature deposited Sn-doped In2O3 thin films by hematite seed layers

NASA Astrophysics Data System (ADS)

Lohaus, Christian; Steinert, Céline; Deyu, Getnet; Brötz, Joachim; Jaegermann, Wolfram; Klein, Andreas

2018-04-01

Hematite Fe2O3 seed layers are shown to constitute a pathway to prepare highly conductive transparent tin-doped indium oxide thin films by room temperature magnetron sputtering. Conductivities of up to σ = 3300 S/cm are observed. The improved conductivity is not restricted to the interface but related to an enhanced crystallization of the films, which proceeds in the rhombohedral phase.

Double-Layer Gadolinium Zirconate/Yttria-Stabilized Zirconia Thermal Barrier Coatings Deposited by the Solution Precursor Plasma Spray Process

NASA Astrophysics Data System (ADS)

Jiang, Chen; Jordan, Eric H.; Harris, Alan B.; Gell, Maurice; Roth, Jeffrey

2015-08-01

Advanced thermal barrier coatings (TBCs) with lower thermal conductivity, increased resistance to calcium-magnesium-aluminosilicate (CMAS), and improved high-temperature capability, compared to traditional yttria-stabilized zirconia (YSZ) TBCs, are essential to higher efficiency in next generation gas turbine engines. Double-layer rare-earth zirconate/YSZ TBCs are a promising solution. From a processing perspective, solution precursor plasma spray (SPPS) process with its unique and beneficial microstructural features can be an effective approach to obtaining the double-layer microstructure. Previously durable low-thermal-conductivity YSZ TBCs with optimized layered porosity, called the inter-pass boundaries (IPBs) were produced using the SPPS process. In this study, an SPPS gadolinium zirconate (GZO) protective surface layer was successfully added. These SPPS double-layer TBCs not only retained good cyclic durability and low thermal conductivity, but also demonstrated favorable phase stability and increased surface temperature capabilities. The CMAS resistance was evaluated with both accumulative and single applications of simulated CMAS in isothermal furnaces. The double-layer YSZ/GZO exhibited dramatic improvement in the single application, but not in the continuous one. In addition, to explore their potential application in integrated gasification combined cycle environments, double-layer TBCs were tested under high-temperature humidity and encouraging performance was recorded.

Transport properties of layered Ba(Pb,Bi)O3 thin films

NASA Astrophysics Data System (ADS)

Hassink, G. W. J.; Munakata, K.; Hammond, R. H.; Beasley, M. R.

2012-02-01

Doped BaBiO3 is a 3D oxide superconductor with a maximum Tc of 30 K for Ba0.6K0.4BiO3. There has been a lot of discussion on whether this high Tc can be explained purely by electron-phonon coupling with a high coupling constant λ. In addition, the presence of real-space paired 6s^2 electrons in the parent compound raise intriguing questions about whether there is an electron-electron coupling interaction as well. This possible negative-U interaction might be used to implement the suggestion by Berg, Orgad and Kivelson [Phys.Rev.B 78, 094509] that for a two-layer system where one layer provides electron pairing interaction and the other layer is conducting, the whole can be superconducting with a high Tc. Here we discuss the transport properties of BaPbO3/BaBiO3 bilayers, where the BaBiO3 layer is thought to act as the pairing layer, while the BaPbO3 acts as the conducting layer. The transport behavior changes to insulating upon decreasing the metallic BaPbO3 layer thickness at values that single films are expected to still be metallic.

Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device.

PubMed

Kim, Sungjun; Chang, Yao-Feng; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Chen, Ying-Chen; Lee, Jong-Ho; Park, Byung-Gook

2017-07-26

Here we demonstrate low-power resistive switching in a Ni/SiN y /SiN x /p ++ -Si device by proposing a double-layered structure (SiN y /SiN x ), where the two SiN layers have different trap densities. The LRS was measured to be as low as 1 nA at a voltage of 1 V, because the SiN x layer maintains insulating properties for the LRS. The single-layered device suffers from uncontrollability of the conducting path, accompanied by the inherent randomness of switching parameters, weak immunity to breakdown during the reset process, and a high operating current. On the other hand, for a double-layered device, the effective conducting path in each layer, which can determine the operating current, can be well controlled by the I CC during the initial forming and set processes. A one-step forming and progressive reset process is observed for a low-power mode, which differs from the high-power switching mode that shows a two-step forming and reset process. Moreover, nonlinear behavior in the LRS, whose origin can be attributed to the P-F conduction and F-N tunneling driven by abundant traps in the silicon-rich SiN x layer, would be beneficial for next-generation nonvolatile memory applications by using a conventional passive SiN x layer as an active dielectric.

Graphene oxide as a dual-function conductive binder for PEEK-derived microporous carbons in high performance supercapacitors

NASA Astrophysics Data System (ADS)

Kim, Christine H. J.; Zhang, Hongbo; Liu, Jie

2015-06-01

Microporous carbons (MPCs) are promising electrode materials for supercapacitors because of their high surface area and accessible pores. However, their low electrical conductivity and mechanical instability result in limited power density and poor cycle life. This work proposes a unique two-layered film made of polyetheretherketone-derived MPCs and reduced graphene oxide (rGO) as an electrode for supercapacitors. Electrochemical characterizations of films show that such a layered structure is more effective in increasing the accessibility of ions to the hydrophilic MPCs and establishing conductive paths through the rGO network than a simple mixed composite film. The two-layered structure increases the capacitance by ˜124% (237 F g-1) with excellent cycling stability (˜93% after 6000 cycles). More importantly, we demonstrate that such performance improvements result from an optimal balance between electrical conductivity and ion accessibility, which maximizes the synergistic effects of MPC and rGO. The MPCs, which are exposed to the surface, provide a highly accessible surface area for ion adsorption. The rGO serves a dual function as a conductive filler to increase the electrical conductivity and as a binder to interconnect individual MPC particles into a robust and flexible film. These findings provide a rational basis for the design of MPC-based electrodes in high performance supercapacitors.

Rational and practical exfoliation of graphite using well-defined poly(3-hexylthiophene) for the preparation of conductive polymer/graphene composite.

PubMed

Iguchi, Hiroki; Higashi, Chisato; Funasaki, Yuichi; Fujita, Keisuke; Mori, Atsunori; Nakasuga, Akira; Maruyama, Tatsuo

2017-01-06

Processing and manipulation of highly conductive pristine graphene in large quantities are still major challenges in the practical application of graphene for electric device. In the present study, we report the liquid-phase exfoliation of graphite in toluene using well-defined poly(3-hexylthiophene) (P3HT) to produce a P3HT/graphene composite. We synthesize and use regioregular P3HT with controlled molecular weights as conductive dispersants for graphene. Simple ultrasonication of graphite flakes with the P3HT successfully produces single-layer and few-layer graphene sheets dispersed in toluene. The produced P3HT/graphene composite can be used as conductive graphene ink, indicating that the P3HT/graphene composite has high electrical conductivity owing to the high conductivity of P3HT and graphene. The P3HT/graphene composite also works as an oxidation-resistant and conductive film for a copper substrate, which is due to the high gas-barrier property of graphene.

Rational and practical exfoliation of graphite using well-defined poly(3-hexylthiophene) for the preparation of conductive polymer/graphene composite

NASA Astrophysics Data System (ADS)

Iguchi, Hiroki; Higashi, Chisato; Funasaki, Yuichi; Fujita, Keisuke; Mori, Atsunori; Nakasuga, Akira; Maruyama, Tatsuo

2017-01-01

Processing and manipulation of highly conductive pristine graphene in large quantities are still major challenges in the practical application of graphene for electric device. In the present study, we report the liquid-phase exfoliation of graphite in toluene using well-defined poly(3-hexylthiophene) (P3HT) to produce a P3HT/graphene composite. We synthesize and use regioregular P3HT with controlled molecular weights as conductive dispersants for graphene. Simple ultrasonication of graphite flakes with the P3HT successfully produces single-layer and few-layer graphene sheets dispersed in toluene. The produced P3HT/graphene composite can be used as conductive graphene ink, indicating that the P3HT/graphene composite has high electrical conductivity owing to the high conductivity of P3HT and graphene. The P3HT/graphene composite also works as an oxidation-resistant and conductive film for a copper substrate, which is due to the high gas-barrier property of graphene.

Rational and practical exfoliation of graphite using well-defined poly(3-hexylthiophene) for the preparation of conductive polymer/graphene composite

PubMed Central

Iguchi, Hiroki; Higashi, Chisato; Funasaki, Yuichi; Fujita, Keisuke; Mori, Atsunori; Nakasuga, Akira; Maruyama, Tatsuo

2017-01-01

Processing and manipulation of highly conductive pristine graphene in large quantities are still major challenges in the practical application of graphene for electric device. In the present study, we report the liquid-phase exfoliation of graphite in toluene using well-defined poly(3-hexylthiophene) (P3HT) to produce a P3HT/graphene composite. We synthesize and use regioregular P3HT with controlled molecular weights as conductive dispersants for graphene. Simple ultrasonication of graphite flakes with the P3HT successfully produces single-layer and few-layer graphene sheets dispersed in toluene. The produced P3HT/graphene composite can be used as conductive graphene ink, indicating that the P3HT/graphene composite has high electrical conductivity owing to the high conductivity of P3HT and graphene. The P3HT/graphene composite also works as an oxidation-resistant and conductive film for a copper substrate, which is due to the high gas-barrier property of graphene. PMID:28059127

Effects of Riblets on Skin Friction in High-Speed Turbulent Boundary Layers

NASA Technical Reports Server (NTRS)

Duan, Lian; Choudhari, Meelan M.

2012-01-01

Direct numerical simulations of spatially developing turbulent boundary layers over riblets are conducted to examine the effects of riblets on skin friction at supersonic speeds. Zero-pressure gradient boundary layers with an adiabatic wall, a Mach number of M1 = 2.5, and a Reynolds number based on momentum thickness of Re = 1720 are considered. Simulations are conducted for boundary-layer flows over a clean surface and symmetric V- groove riblets with nominal spacings of 20 and 40 wall units. The DNS results confirm the few existing experimental observations and show that a drag reduction of approximately 7% is achieved for riblets with proper spacing. The influence of riblets on turbulence statistics is analyzed in detail with an emphasis on identifying the differences, if any, between the drag reduction mechanisms for incompressible and high-speed boundary layers.

Efficient thermoelectric device

NASA Technical Reports Server (NTRS)

Ila, Daryush (Inventor)

2010-01-01

A high efficiency thermo electric device comprising a multi nanolayer structure of alternating insulator and insulator/metal material that is irradiated across the plane of the layer structure with ionizing radiation. The ionizing radiation produces nanocrystals in the layered structure that increase the electrical conductivity and decrease the thermal conductivity thereby increasing the thermoelectric figure of merit. Figures of merit as high as 2.5 have been achieved using layers of co-deposited gold and silicon dioxide interspersed with layers of silicon dioxide. The gold to silicon dioxide ratio was 0.04. 5 MeV silicon ions were used to irradiate the structure. Other metals and insulators may be substituted. Other ionizing radiation sources may be used. The structure tolerates a wide range of metal to insulator ratio.

Graphene oxide/graphene vertical heterostructure electrodes for highly efficient and flexible organic light emitting diodes

NASA Astrophysics Data System (ADS)

Jia, S.; Sun, H. D.; Du, J. H.; Zhang, Z. K.; Zhang, D. D.; Ma, L. P.; Chen, J. S.; Ma, D. G.; Cheng, H. M.; Ren, W. C.

2016-05-01

The relatively high sheet resistance, low work function and poor compatibility with hole injection layers (HILs) seriously limit the applications of graphene as transparent conductive electrodes (TCEs) for organic light emitting diodes (OLEDs). Here, a graphene oxide/graphene (GO/G) vertical heterostructure is developed as TCEs for high-performance OLEDs, by directly oxidizing the top layer of three-layer graphene films with ozone treatment. Such GO/G heterostructure electrodes show greatly improved optical transmittance, a large work function, high stability, and good compatibility with HIL materials (MoO3 in this work). Moreover, the conductivity of the heterostructure is not sacrificed compared to the pristine three-layer graphene electrodes, but is significantly higher than that of pristine two-layer graphene films. In addition to high flexibility, OLEDs with different emission colors based on the GO/G heterostructure TCEs show much better performance than those based on indium tin oxide (ITO) anodes. Green OLEDs with GO/G heterostructure electrodes have the maximum current efficiency and power efficiency, as high as 82.0 cd A-1 and 98.2 lm W-1, respectively, which are 36.7% (14.8%) and 59.2% (15.0%) higher than those with pristine graphene (ITO) anodes. These findings open up the possibility of using graphene for next generation high-performance flexible and wearable optoelectronics with high stability.The relatively high sheet resistance, low work function and poor compatibility with hole injection layers (HILs) seriously limit the applications of graphene as transparent conductive electrodes (TCEs) for organic light emitting diodes (OLEDs). Here, a graphene oxide/graphene (GO/G) vertical heterostructure is developed as TCEs for high-performance OLEDs, by directly oxidizing the top layer of three-layer graphene films with ozone treatment. Such GO/G heterostructure electrodes show greatly improved optical transmittance, a large work function, high stability, and good compatibility with HIL materials (MoO3 in this work). Moreover, the conductivity of the heterostructure is not sacrificed compared to the pristine three-layer graphene electrodes, but is significantly higher than that of pristine two-layer graphene films. In addition to high flexibility, OLEDs with different emission colors based on the GO/G heterostructure TCEs show much better performance than those based on indium tin oxide (ITO) anodes. Green OLEDs with GO/G heterostructure electrodes have the maximum current efficiency and power efficiency, as high as 82.0 cd A-1 and 98.2 lm W-1, respectively, which are 36.7% (14.8%) and 59.2% (15.0%) higher than those with pristine graphene (ITO) anodes. These findings open up the possibility of using graphene for next generation high-performance flexible and wearable optoelectronics with high stability. Electronic supplementary information (ESI) available: XPS spectra, Raman spectra, sheet resistance and transmittance of graphene films with different numbers of layers and different ozone treatment times, doping effect of MoO3 on graphene and GO/G electrodes, performance of green OLEDs with different graphene anodes, a movie showing the flexibility of device. See DOI: 10.1039/c6nr01649a

Manganese oxide nanowires wrapped with nitrogen doped carbon layers for high performance supercapacitors.

PubMed

Li, Ying; Mei, Yuan; Zhang, Lin-Qun; Wang, Jian-Hai; Liu, An-Ran; Zhang, Yuan-Jian; Liu, Song-Qin

2015-10-01

In this study, manganese oxide nanowires wrapped by nitrogen-doped carbon layers (MnO(x)@NCs) were prepared by carbonization of poly(o-phenylenediamine) layer coated onto MnO2 nanowires for high performance supercapacitors. The component and structure of the MnO(x)@NCs were controlled through carbonization procedure under different temperatures. Results demonstrated that this composite combined the high conductivity and high specific surface area of nitrogen-doped carbon layers with the high pseudo-capacitance of manganese oxide nanowires. The as-prepared MnO(x)@NCs exhibited superior capacitive properties in 1 M Na2SO4 aqueous solution, such as high conductivity (4.167×10(-3) S cm(-1)), high specific capacitance (269 F g(-1) at 10 mV s(-1)) and long cycle life (134 F g(-1) after 1200 cycles at a scan rate of 50 mV s(-1)). It is reckoned that the present novel hybrid nanowires can serve as a promising electrode material for supercapacitors and other electrochemical devices. Copyright © 2015 Elsevier Inc. All rights reserved.

Graphene as discharge layer for electron beam lithography on insulating substrate

NASA Astrophysics Data System (ADS)

Liu, Junku; Li, Qunqing; Ren, Mengxin; Zhang, Lihui; Chen, Mo; Fan, Shoushan

2013-09-01

Charging of insulating substrates is a common problem during Electron Beam lithography (EBL), which deflects the beam and distorts the pattern. A homogeneous, electrically conductive, and transparent graphene layer is used as a discharge layer for EBL processes on insulating substrates. The EBL resolution is improved compared with the metal discharge layer. Dense arrays of holes with diameters of 50 nm and gratings with line/space of 50/30 nm are obtained on quartz substrate. The pattern placement errors and proximity effect are suppressed over a large area and high quality complex nanostructures are fabricated using graphene as a conductive layer.

Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene

NASA Astrophysics Data System (ADS)

Cho, Chu-Young; Choe, Minhyeok; Lee, Sang-Jun; Hong, Sang-Hyun; Lee, Takhee; Lim, Wantae; Kim, Sung-Tae; Park, Seong-Ju

2013-03-01

We report on gold (Au)-doped multi-layer graphene (MLG), which can be used as a transparent conducting layer in near-ultraviolet light-emitting diodes (NUV-LEDs). The optical output power of NUV-LEDs with thermally annealed Au-doped MLG was increased by 34% compared with that of NUV-LEDs with a bare MLG. This result is attributed to the reduced sheet resistance and the enhanced current injection efficiency of NUV-LEDs by the thermally annealed Au-doped MLG film, which shows high transmittance in NUV and UV regions and good adhesion of Au-doped MLG on p-GaN layer of NUV-LEDs.

Si/Ge double-layered nanotube array as a lithium ion battery anode.

PubMed

Song, Taeseup; Cheng, Huanyu; Choi, Heechae; Lee, Jin-Hyon; Han, Hyungkyu; Lee, Dong Hyun; Yoo, Dong Su; Kwon, Moon-Seok; Choi, Jae-Man; Doo, Seok Gwang; Chang, Hyuk; Xiao, Jianliang; Huang, Yonggang; Park, Won Il; Chung, Yong-Chae; Kim, Hansu; Rogers, John A; Paik, Ungyu

2012-01-24

Problems related to tremendous volume changes associated with cycling and the low electron conductivity and ion diffusivity of Si represent major obstacles to its use in high-capacity anodes for lithium ion batteries. We have developed a group IVA based nanotube heterostructure array, consisting of a high-capacity Si inner layer and a highly conductive Ge outer layer, to yield both favorable mechanics and kinetics in battery applications. This type of Si/Ge double-layered nanotube array electrode exhibits improved electrochemical performances over the analogous homogeneous Si system, including stable capacity retention (85% after 50 cycles) and doubled capacity at a 3C rate. These results stem from reduced maximum hoop strain in the nanotubes, supported by theoretical mechanics modeling, and lowered activation energy barrier for Li diffusion. This electrode technology creates opportunities in the development of group IVA nanotube heterostructures for next generation lithium ion batteries. © 2011 American Chemical Society

Fabricating solid carbon porous electrodes from powders

DOEpatents

Kaschmitter, James L.; Tran, Tri D.; Feikert, John H.; Mayer, Steven T.

1997-01-01

Fabrication of conductive solid porous carbon electrodes for use in batteries, double layer capacitors, fuel cells, capacitive dionization, and waste treatment. Electrodes fabricated from low surface area (<50 m.sup.2 /gm) graphite and cokes exhibit excellent reversible lithium intercalation characteristics, making them ideal for use as anodes in high voltage lithium insertion (lithium-ion) batteries. Electrodes having a higher surface area, fabricated from powdered carbon blacks, such as carbon aerogel powder, carbon aerogel microspheres, activated carbons, etc. yield high conductivity carbon compositives with excellent double layer capacity, and can be used in double layer capacitors, or for capacitive deionization and/or waste treatment of liquid streams. By adding metallic catalysts to be high surface area carbons, fuel cell electrodes can be produced.

Fabricating solid carbon porous electrodes from powders

DOEpatents

Kaschmitter, J.L.; Tran, T.D.; Feikert, J.H.; Mayer, S.T.

1997-06-10

Fabrication is described for conductive solid porous carbon electrodes for use in batteries, double layer capacitors, fuel cells, capacitive deionization, and waste treatment. Electrodes fabricated from low surface area (<50 m{sup 2}/gm) graphite and cokes exhibit excellent reversible lithium intercalation characteristics, making them ideal for use as anodes in high voltage lithium insertion (lithium-ion) batteries. Electrodes having a higher surface area, fabricated from powdered carbon blacks, such as carbon aerogel powder, carbon aerogel microspheres, activated carbons, etc. yield high conductivity carbon composites with excellent double layer capacity, and can be used in double layer capacitors, or for capacitive deionization and/or waste treatment of liquid streams. By adding metallic catalysts to high surface area carbons, fuel cell electrodes can be produced. 1 fig.

Conductivity fuel cell collector plate and method of fabrication

DOEpatents

Braun, James C.

2002-01-01

An improved method of manufacturing a PEM fuel cell collector plate is disclosed. During molding a highly conductive polymer composite is formed having a relatively high polymer concentration along its external surfaces. After molding the polymer rich layer is removed from the land areas by machining, grinding or similar process. This layer removal results in increased overall conductivity of the molded collector plate. The polymer rich surface remains in the collector plate channels, providing increased mechanical strength and other benefits to the channels. The improved method also permits greater mold cavity thickness providing a number of advantages during the molding process.

Layered conductive polymer on nylon membrane templates for high performance, thin-film supercapacitor electrodes

NASA Astrophysics Data System (ADS)

Shi, HaoTian Harvey; Naguib, Hani E.

2016-04-01

Flexible Thin-film Electrochemical Capacitors (ECs) are emerging technology that plays an important role as energy supply for various electronics system for both present era and the future. Intrinsically conductive polymers (ICPs) are promising pseudo-capacitive materials as they feature both good electrical conductivity and high specific capacitance. This study focuses on the construction and characterization of ultra-high surface area porous electrodes based on coating of nano-sized conductive polymer materials on nylon membrane templates. Herein, a novel nano-engineered electrode material based on nylon membranes was presented, which allows the creation of super-capacitor devices that is capable of delivering competitive performance, while maintaining desirable mechanical characteristics. With the formation of a highly conductive network with the polyaniline nano-layer, the electrical conductivity was also increased dramatically to facilitate the charge transfer process. Cyclic voltammetry and specific capacitance results showed promising application of this type of composite materials for future smart textile applications.

Ionomer-Liquid Electrolyte Hybrid Ionic Conductor for High Cycling Stability of Lithium Metal Electrodes

PubMed Central

Song, Jongchan; Lee, Hongkyung; Choo, Min-Ju; Park, Jung-Ki; Kim, Hee-Tak

2015-01-01

The inhomogeneous Li electrodeposition of lithium metal electrode has been a major impediment to the realization of rechargeable lithium metal batteries. Although single ion conducting ionomers can induce more homogeneous Li electrodeposition by preventing Li+ depletion at Li surface, currently available materials do not allow room-temperature operation due to their low room temperature conductivities. In the paper, we report that a highly conductive ionomer/liquid electrolyte hybrid layer tightly laminated on Li metal electrode can realize stable Li electrodeposition at high current densities up to 10 mA cm−2 and permit room-temperature operation of corresponding Li metal batteries with low polarizations. The hybrid layer is fabricated by laminating few micron-thick Nafion layer on Li metal electrode followed by soaking 1 M LiPF6 EC/DEC (1/1) electrolyte. The Li/Li symmetric cell with the hybrid layer stably operates at a high current density of 10 mA cm−2 for more than 2000 h, which corresponds to more than five-fold enhancement compared with bare Li metal electrode. Also, the prototype Li/LiCoO2 battery with the hybrid layer offers cycling stability more than 350 cycles. These results demonstrate that the hybrid strategy successfully combines the advantages of bi-ionic liquid electrolyte (fast Li+ transport) and single ionic ionomer (prevention of Li+ depletion). PMID:26411701

Ionomer-Liquid Electrolyte Hybrid Ionic Conductor for High Cycling Stability of Lithium Metal Electrodes

NASA Astrophysics Data System (ADS)

Song, Jongchan; Lee, Hongkyung; Choo, Min-Ju; Park, Jung-Ki; Kim, Hee-Tak

2015-09-01

The inhomogeneous Li electrodeposition of lithium metal electrode has been a major impediment to the realization of rechargeable lithium metal batteries. Although single ion conducting ionomers can induce more homogeneous Li electrodeposition by preventing Li+ depletion at Li surface, currently available materials do not allow room-temperature operation due to their low room temperature conductivities. In the paper, we report that a highly conductive ionomer/liquid electrolyte hybrid layer tightly laminated on Li metal electrode can realize stable Li electrodeposition at high current densities up to 10 mA cm-2 and permit room-temperature operation of corresponding Li metal batteries with low polarizations. The hybrid layer is fabricated by laminating few micron-thick Nafion layer on Li metal electrode followed by soaking 1 M LiPF6 EC/DEC (1/1) electrolyte. The Li/Li symmetric cell with the hybrid layer stably operates at a high current density of 10 mA cm-2 for more than 2000 h, which corresponds to more than five-fold enhancement compared with bare Li metal electrode. Also, the prototype Li/LiCoO2 battery with the hybrid layer offers cycling stability more than 350 cycles. These results demonstrate that the hybrid strategy successfully combines the advantages of bi-ionic liquid electrolyte (fast Li+ transport) and single ionic ionomer (prevention of Li+ depletion).

Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

DOEpatents

Jansen, Kai W.; Maley, Nagi

2000-01-01

High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

DOEpatents

Jansen, Kai W.; Maley, Nagi

2001-01-01

High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

Flow prediction over a transport multi-element high-lift system and comparison with flight measurements

NASA Technical Reports Server (NTRS)

Vijgen, P. M. H. W.; Hardin, J. D.; Yip, L. P.

1992-01-01

Accurate prediction of surface-pressure distributions, merging boundary-layers, and separated-flow regions over multi-element high-lift airfoils is required to design advanced high-lift systems for efficient subsonic transport aircraft. The availability of detailed measurements of pressure distributions and both averaged and time-dependent boundary-layer flow parameters at flight Reynolds numbers is critical to evaluate computational methods and to model the turbulence structure for closure of the flow equations. Several detailed wind-tunnel measurements at subscale Reynolds numbers were conducted to obtain detailed flow information including the Reynolds-stress component. As part of a subsonic-transport high-lift research program, flight experiments are conducted using the NASA-Langley B737-100 research aircraft to obtain detailed flow characteristics for support of computational and wind-tunnel efforts. Planned flight measurements include pressure distributions at several spanwise locations, boundary-layer transition and separation locations, surface skin friction, as well as boundary-layer profiles and Reynolds stresses in adverse pressure-gradient flow.

Hierarchically structured Co₃O₄@Pt@MnO₂ nanowire arrays for high-performance supercapacitors.

PubMed

Xia, Hui; Zhu, Dongdong; Luo, Zhentao; Yu, Yue; Shi, Xiaoqin; Yuan, Guoliang; Xie, Jianping

2013-10-17

Here we proposed a novel architectural design of a ternary MnO2-based electrode - a hierarchical Co3O4@Pt@MnO2 core-shell-shell structure, where the complemental features of the three key components (a well-defined Co3O4 nanowire array on the conductive Ti substrate, an ultrathin layer of small Pt nanoparticles, and a thin layer of MnO2 nanoflakes) are strategically combined into a single entity to synergize and construct a high-performance electrode for supercapacitors. Owing to the high conductivity of the well-defined Co3O4 nanowire arrays, in which the conductivity was further enhanced by a thin metal (Pt) coating layer, in combination with the large surface area provided by the small MnO2 nanoflakes, the as-fabricated Co3O4@Pt@MnO2 nanowire arrays have exhibited high specific capacitances, good rate capability, and excellent cycling stability. The architectural design demonstrated in this study provides a new approach to fabricate high-performance MnO2-based nanowire arrays for constructing next-generation supercapacitors.

Hierarchically Structured Co3O4@Pt@MnO2 Nanowire Arrays for High-Performance Supercapacitors

NASA Astrophysics Data System (ADS)

Xia, Hui; Zhu, Dongdong; Luo, Zhentao; Yu, Yue; Shi, Xiaoqin; Yuan, Guoliang; Xie, Jianping

2013-10-01

Here we proposed a novel architectural design of a ternary MnO2-based electrode - a hierarchical Co3O4@Pt@MnO2 core-shell-shell structure, where the complemental features of the three key components (a well-defined Co3O4 nanowire array on the conductive Ti substrate, an ultrathin layer of small Pt nanoparticles, and a thin layer of MnO2 nanoflakes) are strategically combined into a single entity to synergize and construct a high-performance electrode for supercapacitors. Owing to the high conductivity of the well-defined Co3O4 nanowire arrays, in which the conductivity was further enhanced by a thin metal (Pt) coating layer, in combination with the large surface area provided by the small MnO2 nanoflakes, the as-fabricated Co3O4@Pt@MnO2 nanowire arrays have exhibited high specific capacitances, good rate capability, and excellent cycling stability. The architectural design demonstrated in this study provides a new approach to fabricate high-performance MnO2-based nanowire arrays for constructing next-generation supercapacitors.

Photovoltaic cell assembly

DOEpatents

Beavis, Leonard C.; Panitz, Janda K. G.; Sharp, Donald J.

1990-01-01

A photovoltaic assembly for converting high intensity solar radiation into lectrical energy in which a solar cell is separated from a heat sink by a thin layer of a composite material which has excellent dielectric properties and good thermal conductivity. This composite material is a thin film of porous Al.sub.2 O.sub.3 in which the pores have been substantially filled with an electrophoretically-deposited layer of a styrene-acrylate resin. This composite provides electrical breakdown strengths greater than that of a layer consisting essentially of Al.sub.2 O.sub.3 and has a higher thermal conductivity than a layer of styrene-acrylate alone.

Optimization of chemical structure of Schottky-type selection diode for crossbar resistive memory.

PubMed

Kim, Gun Hwan; Lee, Jong Ho; Jeon, Woojin; Song, Seul Ji; Seok, Jun Yeong; Yoon, Jung Ho; Yoon, Kyung Jean; Park, Tae Joo; Hwang, Cheol Seong

2012-10-24

The electrical performances of Pt/TiO(2)/Ti/Pt stacked Schottky-type diode (SD) was systematically examined, and this performance is dependent on the chemical structures of the each layer and their interfaces. The Ti layers containing a tolerable amount of oxygen showed metallic electrical conduction characteristics, which was confirmed by sheet resistance measurement with elevating the temperature, transmission line measurement (TLM), and Auger electron spectroscopy (AES) analysis. However, the chemical structure of SD stack and resulting electrical properties were crucially affected by the dissolved oxygen concentration in the Ti layers. The lower oxidation potential of the Ti layer with initially higher oxygen concentration suppressed the oxygen deficiency of the overlying TiO(2) layer induced by consumption of the oxygen from TiO(2) layer. This structure results in the lower reverse current of SDs without significant degradation of forward-state current. Conductive atomic force microscopy (CAFM) analysis showed the current conduction through the local conduction paths in the presented SDs, which guarantees a sufficient forward-current density as a selection device for highly integrated crossbar array resistive memory.

Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitchel, W. C., E-mail: William.Mitchel.1@us.af.mil; Haugan, H. J.; Mou, Shin

2015-09-15

Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to the superlattices. We report here temperature dependent resistivity and Hall effect measurements of bare substrates and substrate-p-type buffer layer structures grown by molecular beam epitaxy. Multicarrier analysis of the resistivity and Hall coefficient data demonstrate that high temperature transport in the substrates is due to conduction in both the high mobility zone center Γ band and the low mobility off-center L band. High overallmore » mobility values indicate the absence of close compensation and that improved infrared and transport properties were achieved by a reduction in intrinsic acceptor concentration. Standard transport measurements of the undoped buffer layers show p-type conduction up to 300 K indicating electrical isolation of the buffer layer from the lightly n-type GaSb substrate. However, the highest temperature data indicate the early stages of the expected p to n type conversion which leads to apparent anomalously high carrier concentrations and lower than expected mobilities. Data at 77 K indicate very high quality buffer layers.« less

Thin film photovoltaic device with multilayer substrate

DOEpatents

Catalano, Anthony W.; Bhushan, Manjul

1984-01-01

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

Structure and properties of polyaniline nanocomposite coatings containing gold nanoparticles formed by low-energy electron beam deposition

NASA Astrophysics Data System (ADS)

Wang, Surui; Rogachev, A. A.; Yarmolenko, M. A.; Rogachev, A. V.; Xiaohong, Jiang; Gaur, M. S.; Luchnikov, P. A.; Galtseva, O. V.; Chizhik, S. A.

2018-01-01

Highly ordered conductive polyaniline (PANI) coatings containing gold nanoparticles were prepared by low-energy electron beam deposition method, with emeraldine base and chloroauric acid used as target materials. The molecular and chemical structure of the layers was studied by Fourier transform infrared, Raman, UV-vis and X-ray photoelectron spectroscopy. The morphology of the coatings was investigated by atomic force and transmission electron microscopy. Conductive properties were obtained by impedance spectroscopy method and scanning spreading resistance microscopy mode at the micro- and nanoscale. It was found that the emeraldine base layers formed from the products of electron-beam dispersion have extended, non-conductive polymer chains with partially reduced structure, with the ratio of imine and amine groups equal to 0.54. In case of electron-beam dispersion of the emeraldine base and chloroauric acid, a protoemeraldine structure is formed with conductivity 0.1 S/cm. The doping of this structure was carried out due to hydrochloric acid vapor and gold nanoparticles formed by decomposition of chloroauric acid, which have a narrow size distribution, with the most probable diameter about 40 nm. These gold nanoparticles improve the conductivity of the thin layers of PANI + Au composite, promoting intra- and intermolecular charge transfer of the PANI macromolecules aligned along the coating surface both at direct and alternating voltage. The proposed deposition method of highly oriented, conductive nanocomposite PANI-based coatings may be used in the direct formation of functional layers on conductive and non-conductive substrates.

Back wall solar cell

NASA Technical Reports Server (NTRS)

Brandhorst, H. W., Jr. (Inventor)

1978-01-01

A solar cell is disclosed which comprises a first semiconductor material of one conductivity type with one face having the same conductivity type but more heavily doped to form a field region arranged to receive the radiant energy to be converted to electrical energy, and a layer of a second semiconductor material, preferably highly doped, of opposite conductivity type on the first semiconductor material adjacent the first semiconductor material at an interface remote from the heavily doped field region. Instead of the opposite conductivity layer, a metallic Schottky diode layer may be used, in which case no additional back contact is needed. A contact such as a gridded contact, previous to the radiant energy may be applied to the heavily doped field region of the more heavily doped, same conductivity material for its contact.

Stable aqueous based Cu nanoparticle ink for printing well-defined highly conductive features on a plastic substrate.

PubMed

Jeong, Sunho; Song, Hae Chun; Lee, Won Woo; Lee, Sun Sook; Choi, Youngmin; Son, Wonil; Kim, Eui Duk; Paik, Choon Hoon; Oh, Seok Heon; Ryu, Beyong-Hwan

2011-03-15

With the aim of inkjet printing highly conductive and well-defined Cu features on plastic substrates, aqueous based Cu ink is prepared for the first time using water-soluble Cu nanoparticles with a very thin surface oxide layer. Owing to the specific properties, high surface tension and low boiling point, of water, the aqueous based Cu ink endows a variety of advantages over conventional Cu inks based on organic solvents in printing narrow conductive patterns without irregular morphologies. It is demonstrated how the design of aqueous based ink affects the basic properties of printed conductive features such as surface morphology, microstructure, conductivity, and line width. The long-term stability of aqueous based Cu ink against oxidation is analyzed through an X-ray photoelectron spectroscopy (XPS) based investigation on the evolution of the surface oxide layer in the aqueous based ink.

Development of an Anti-Corrosion Conductive Nano Carbon Coating Layer on Metal Bipolar Plates.

PubMed

Yeo, Kiho; Kim, Juyong; Kim, Jongryoul

2018-09-01

For automotive applications of polymer electrolyte membrane fuel cells, the enhancement of the corrosion resistance of metal bipolar plates has been a critical issue with regard to the lifespan of fuel cell stacks. In this paper, we present a novel method for increasing the lifespan by means of a conductive carbon coating on bipolar plates. Conductive carbon films were plasma coated onto metal bipolar plates in a vacuum at various temperatures. As a result, 316L stainless plates with a 10-nm-thick carbon coating layer on a 20-nm-thick CrN undercoat layer showed-contact resistance of 10.71 mΩcm2@10 kgf/cm2 and a corrosion current of 0.5 μA/cm2@0.6 V. This thin coating layer with high conductivity and excellent corrosion resistance suggests a new, effective coating method for the mass production of metal bipolar plates.

La0.7Sr0.3MnO3: A single, conductive-oxide buffer layer for the development of YBa2Cu3O7-δ coated conductors

NASA Astrophysics Data System (ADS)

Aytug, T.; Paranthaman, M.; Kang, B. W.; Sathyamurthy, S.; Goyal, A.; Christen, D. K.

2001-10-01

Coated conductor applications in power technologies require stabilization of the high-temperature superconducting (HTS) layers against thermal runaway. Conductive La0.7Sr0.3MnO3 (LSMO) has been epitaxially grown on biaxially textured Ni substrates as a single buffer layer. The subsequent epitaxial growth of YBa2Cu3O7-δ (YBCO) coatings by pulsed laser deposition yielded self-field critical current densities (Jc) of 0.5×106A/cm2 at 77 K, and provided good electrical connectivity over the entire structure (HTS+conductive-buffer+metal substrate). Property characterizations of YBCO/LSMO/Ni architecture revealed excellent crystallographic and morphological properties. These results have demonstrated that LSMO, used as a single, conductive buffer layer, may offer potential for use in fully stabilized YBCO coated conductors.

Testing alternative conceptual models of seawater intrusion in a coastal aquifer using computer simulation, southern California, USA

USGS Publications Warehouse

Nishikawa, Tracy

1997-01-01

Two alternative conceptual models of the physical processes controlling seawater intrusion in a coastal basin in California, USA, were tested to identify a likely principal pathway for seawater intrusion. The conceptual models were tested by using a two-dimensional, finite-element groundwater flow and transport model. This pathway was identified by the conceptual model that best replicated the historical data. The numerical model was applied in cross section to a submarine canyon that is a main avenue for seawater to enter the aquifer system underlying the study area. Both models are characterized by a heterogeneous, layered, water-bearing aquifer. However, the first model is characterized by flat-lying aquifer layers and by a high value of hydraulic conductivity in the basal aquifer layer, which is thought to be a principal conduit for seawater intrusion. The second model is characterized by offshore folding, which was modeled as a very nearshore outcrop, thereby providing a shorter path for seawater to intrude. General conclusions are that: 1) the aquifer system is best modeled as a flat, heterogeneous, layered system; 2) relatively thin basal layers with relatively high values of hydraulic conductivity are the principal pathways for seawater intrusion; and 3) continuous clay layers of low hydraulic conductivity play an important role in controlling the movement of seawater.

High temperature insulation barrier composite

NASA Technical Reports Server (NTRS)

Onstott, Joseph W. (Inventor)

1989-01-01

A composite material suitable for providing insulation for the nozzle structure of the Space Shuttle and other similar surfaces is disclosed. The composite layer is comprised of an outer skin layer of nickel chromium and an interleaved inner region comprising a top layer of nickel chromium foil which acts as a primary convective shield. There are at least two layers of alumina batting adjacent to the layers of silicon carbide fabric. An additional layer of nickel chromium foil is used as a secondary convective shield. The composite is particularly advantageous for use as nozzle insulation because of its ability to withstand high reentry temperatures, its flexibility, oxidation resistance, low conductivity, and light weight.

A vacancy-modulated self-selective resistive switching memory with pronounced nonlinear behavior

NASA Astrophysics Data System (ADS)

Ma, Haili; Feng, Jie; Gao, Tian; Zhu, Xi

2017-12-01

In this study, we report a self-selective (nonlinear) resistive switching memory cell, with high on-state half-bias nonlinearity of 650, sub-μA operating current, and high On/Off ratios above 100×. Regarding the cell structure, a thermal oxidized HfO x layer in combination with a sputtered Ta2O5 layer was configured as an active stack, with Pt and Hf as top and bottom electrodes, respectively. The Ta2O5 acts as a selective layer as well as a series resistor, which could make the resistive switching happened in HfO x layer. Through the analysis of the physicochemical properties and electrical conduction mechanisms at each state, a vacancy-modulated resistance switching model was proposed to explain the switching behavior. The conductivity of HfO x layer was changed by polarity-dependent drift of the oxygen vacancy ( V o), resulting in an electron hopping distance change during switching. With the help of Ta2O5 selective layer, high nonlinearity observed in low resistance state. The proposed material stack shows a promising prospect to act as a self-selective cell for 3D vertical RRAM application.

Portable heatable container

NASA Technical Reports Server (NTRS)

Yang, L. C. (Inventor)

1980-01-01

A container is provided which can be designed to heat its outer surface to sterilize it, or to heat its inner surface and any contents therewithin. In a container that self sterilizes its outer surface, the container includes a combustible layer of thermite-type pyrotechnic material which can be ignited to generate considerable heat, and a thin casing around the combustible layer which is of highly thermally conductive materials such as aluminum which can be heated to a high temperature by the ignited combustible layer. A buffer layer which may be of metal, lies within the combustible layer, and a layer of insulation such as Teflon lies within the buffer layer to insulate the contents of the container from the heat.

Portable heatable container

NASA Astrophysics Data System (ADS)

Yang, L. C.

1980-03-01

A container is provided which can be designed to heat its outer surface to sterilize it, or to heat its inner surface and any contents therewithin. In a container that self sterilizes its outer surface, the container includes a combustible layer of thermite-type pyrotechnic material which can be ignited to generate considerable heat, and a thin casing around the combustible layer which is of highly thermally conductive materials such as aluminum which can be heated to a high temperature by the ignited combustible layer. A buffer layer which may be of metal, lies within the combustible layer, and a layer of insulation such as Teflon lies within the buffer layer to insulate the contents of the container from the heat.

Rechargeable solid polymer electrolyte battery cell

DOEpatents

Skotheim, Terji

1985-01-01

A rechargeable battery cell comprising first and second electrodes sandwiching a solid polymer electrolyte comprising a layer of a polymer blend of a highly conductive polymer and a solid polymer electrolyte adjacent said polymer blend and a layer of dry solid polymer electrolyte adjacent said layer of polymer blend and said second electrode.

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors.

PubMed

Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

2015-12-14

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10(-10) S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water.

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors

PubMed Central

Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R.; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

2015-01-01

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10–10 S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water. PMID:26658331

High voltage photo-switch package module having encapsulation with profiled metallized concavities

DOEpatents

Sullivan, James S; Sanders, David M; Hawkins, Steven A; Sampayan, Stephen A

2015-05-05

A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces metalized with first metallic layers formed thereon, and encapsulated with a dielectric encapsulation material such as for example epoxy. The first metallic layers are exposed through the encapsulation via encapsulation concavities which have a known contour profile, such as a Rogowski edge profile. Second metallic layers are then formed to line the concavities and come in contact with the first metal layer, to form profiled and metalized encapsulation concavities which mitigate enhancement points at the edges of electrodes matingly seated in the concavities. One or more optical waveguides may also be bonded to the substrate for coupling light into the photo-conductive wafer, with the encapsulation also encapsulating the waveguides.

A model to predict thermal conductivity of irradiated U-Mo dispersion fuel

NASA Astrophysics Data System (ADS)

Burkes, Douglas E.; Huber, Tanja K.; Casella, Andrew M.

2016-05-01

Numerous global programs are focused on the continued development of existing and new research and test reactor fuels to achieve maximum attainable uranium loadings to support the conversion of a number of the world's remaining high-enriched uranium fueled reactors to low-enriched uranium fuel. Some of these programs are focused on assisting with the development and qualification of a fuel design that consists of a uranium-molybdenum (U-Mo) alloy dispersed in an aluminum matrix as one option for reactor conversion. Thermal conductivity is an important consideration in determining the operational temperature of the fuel and can be influenced by interaction layer formation between the dispersed phase and matrix and upon the concentration of the dispersed phase within the matrix. This paper extends the use of a simple model developed previously to study the influence of interaction layer formation as well as the size and volume fraction of fuel particles dispersed in the matrix, Si additions to the matrix, and Mo concentration in the fuel particles on the effective thermal conductivity of the U-Mo/Al composite during irradiation. The model has been compared to experimental measurements recently conducted on U-Mo/Al dispersion fuels at two different fission densities with acceptable agreement. Observations of the modeled results indicate that formation of an interaction layer and subsequent consumption of the matrix reveals a rather significant effect on effective thermal conductivity. The modeled interaction layer formation and subsequent consumption of the high thermal conductivity matrix was sensitive to the average dispersed fuel particle size, suggesting this parameter as one of the most effective in minimizing thermal conductivity degradation of the composite, while the influence of Si additions to the matrix in the model was highly dependent upon irradiation conditions.

Deep crustal structure between the Selkirk Crest, Idaho and the Whitefish Range, Montana from magnetotelluric imaging

NASA Astrophysics Data System (ADS)

Bedrosian, P. A.; Box, S. E.; Pellerin, L.

2006-12-01

The Middle Proterozoic Belt Basin, spanning parts of Montana, Idaho, Washington, and British Columbia, is one of the deepest basins in North America. More than 18 km of fine-grained sedimentary strata were deposited rapidly between 1.5-1.4 Ga and split by rifting during late Proterozoic development of the North American passive margin. Basin strata were relatively undeformed until Mesozoic Cordilleran thrusting and early Eocene extension. Many outstanding questions require an understanding of deep basin structure, including the flexural load of the Basin, its role during Cordilleran deformation, and controls on ore-forming fluids that produced stratabound Cu-Ag deposits within the Basin. Long-period (deep-crustal) and broadband (shallow-crustal) magnetotelluric (MT) data were collected in 2005 along a 140 km transect within the central Belt Basin, with an average site spacing of 4 km. A portion of the transect is coincident with two deep-crustal seismic reflection profiles (COCORP lines MT-2 and ID-2). The data generally confirm the NW strike of the Sylvanite anticline and Purcell anticlinorium and the more northerly strike of the Libby Thrust Belt. A best-fit, two-dimensional (2D) resistivity model was generated from the MT data down to 50 km. The model is characterized by two subhorizontal, highly conductive horizons. A shallow horizon at 10-15 km depth begins 10 km west of the Whitefish Range front and continues to the west for 60 km to an abrupt end beneath the Sylvanite anticline. A deeper highly-conductive, concave-up layer occurs at 25-35 km depth from just west of southern Lake Koocanusa to an abrupt end about 20 km east of the Purcell trench. From that point west to the Selkirk Crest, the entire crust is very resistive. A crude resistivity stratigraphy is delineated: highly resistive (>104 Ømega m) middle and upper Belt Supergroup (above the Prichard Fm.), moderately conductive (30-1000 Ømega m) Prichard Fm. (to the present depth of exposure), a highly conductive (1-10 Ømega m) sub-Prichard layer (below the lowest Prichard unit mapped at the surface), and moderately to highly resistive (103-104 Ømega m) pre-Belt crystalline basement. The Eocene Purcell trench detachment fault can be traced dipping 25-30° east down to about 20 km depth, flattening along the base of the shallow conductive layer to its eastern end, fully 100 km east of the surface trace of the fault. Realignment of the eastern edges of the shallow and deep conductive layers produces a single west-dipping horizon and suggests about 35 km of Eocene top-to-the-east extension along the northern Purcell trench detachment fault. Reversal of that displacement reveals the crustal structure as it existed at the end of late Mesozoic Cordilleran thrusting. A major thrust decollement at 10-12 km, well-defined below the Sylvanite anticline, occurs below the deepest exposed Prichard units but above the shallow conductive layer. The shallow and deep conductive layers are suggested to be thrust repetitions of a single original layer separated by a thrust imbricate of Archean crystalline basement, 35 km wide and 5-8 km thick, centered below the Sylvanite anticline. The conductive layers are interpreted as sub-Prichard sedimentary strata with disseminated carbonaceous matter or sulfide grains interconnected by shearing. This interpretation is consistent with disseminated sulfides within the lowest exposed Prichard, and emphasizes the dramatic increase in conductivity effected by shearing. Total Cordilleran thrust shortening of 150-200 km is indicated.

Manipulation of heat-diffusion channel in laser thermal lithography.

PubMed

Wei, Jingsong; Wang, Yang; Wu, Yiqun

2014-12-29

Laser thermal lithography is a good alternative method for forming small pattern feature size by taking advantage of the structural-change threshold effect of thermal lithography materials. In this work, the heat-diffusion channels of laser thermal lithography are first analyzed, and then we propose to manipulate the heat-diffusion channels by inserting thermal conduction layers in between channels. Heat-flow direction can be changed from the in-plane to the out-of-plane of the thermal lithography layer, which causes the size of the structural-change threshold region to become much smaller than the focused laser spot itself; thus, nanoscale marks can be obtained. Samples designated as "glass substrate/thermal conduction layer/thermal lithography layer (100 nm)/thermal conduction layer" are designed and prepared. Chalcogenide phase-change materials are used as thermal lithography layer, and Si is used as thermal conduction layer to manipulate heat-diffusion channels. Laser thermal lithography experiments are conducted on a home-made high-speed rotation direct laser writing setup with 488 nm laser wavelength and 0.90 numerical aperture of converging lens. The writing marks with 50-60 nm size are successfully obtained. The mark size is only about 1/13 of the focused laser spot, which is far smaller than that of the light diffraction limit spot of the direct laser writing setup. This work is useful for nanoscale fabrication and lithography by exploiting the far-field focusing light system.

Conducting tin halides with a layered organic-based perovskite structure

NASA Astrophysics Data System (ADS)

Mitzi, D. B.; Feild, C. A.; Harrison, W. T. A.; Guloy, A. M.

1994-06-01

THE discovery1 of high-temperature superconductivity in layered copper oxide perovskites has generated considerable fundamental and technological interest in this class of materials. Only a few other examples of conducting layered perovskites are known; these are also oxides such as (La1-xSrx)n+1 MnnO3n+1 (ref. 2), Lan+1NinO3n+1 (ref. 3) and Ban+1PbnO3n+1 (ref. 4), all of which exhibit a trend from semiconducting to metallic behaviour with increasing number of perovskite layers (n). We report here the synthesis of a family of organic-based layered halide perovskites, (C4H9NH3)2(CH3NH3)n-1Snnl3n+1 which show a similar transition from semiconducting to metallic behaviour with increasing n. The incorporation of an organic modulation layer between the conducting tin iodide sheets potentially provides greater flexibility for tuning the electrical properties of the perovskite sheets, and we suggest that such an approach will prove valuable for exploring the range of transport properties possible with layered perovskites.

Multi-layer electrode for high contrast electrochromic devices

DOEpatents

Schwendeman, Irina G [Wexford, PA; Finley, James J [Pittsburgh, PA; Polcyn, Adam D [Pittsburgh, PA; Boykin, Cheri M [Wexford, PA

2011-11-01

An electrochromic device includes a first substrate spaced from a second substrate. A first transparent conductive electrode is formed over at least a portion of the first substrate. A polymeric anode is formed over at least a portion of the first conductive electrode. A second transparent conductive electrode is formed over at least a portion of the second substrate. In one aspect of the invention, a multi-layer polymeric cathode is formed over at least a portion of the second conductive electrode. In one non-limiting embodiment, the multi-layer cathode includes a first cathodically coloring polymer formed over at least a portion of the second conductive electrode and a second cathodically coloring polymer formed over at least a portion of the first cathodically coloring polymer. An ionic liquid is positioned between the anode and the cathode.

Monolithic high voltage nonlinear transmission line fabrication process

DOEpatents

Cooper, Gregory A.

1994-01-01

A process for fabricating sequential inductors and varactor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varactor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process.

Cellulose nanofibers/reduced graphene oxide flexible transparent conductive paper.

PubMed

Gao, Kezheng; Shao, Ziqiang; Wu, Xue; Wang, Xi; Li, Jia; Zhang, Yunhua; Wang, Wenjun; Wang, Feijun

2013-08-14

The cellulose nanofibers (CNFs) paper exhibit high visible light transmittance, high mechanical strength, and excellent flexibility. Therefore, CNFs paper may be an excellent substrate material for flexible transparent electronic devices. In this paper, we endeavor to prepare CNFs-based flexible transparent conductive paper by layer-by-layer (LbL) assembly using divalent copper ions (Cu(2+)) as the crosslinking agent. The thickness of the reduced graphene oxide (RGO) active layer in the CNFs paper can be controlled by the cycle times of the LbL assembly. CNFs/[RGO]20 paper has the sheet resistances of ∼2.5 kΩ/□, and the transmittance of about 76% at a wavelength of 550 nm. Furthermore, CNFs/[RGO]20 paper inherits the excellent mechanical properties of CNFs paper, and the ultimate strength is about 136 MPa. CNFs-based flexible transparent conductive paper also exhibits excellent electrical stability and flexibility. Copyright © 2013. Published by Elsevier Ltd.

Growing Gallium Arsenide On Silicon

NASA Technical Reports Server (NTRS)

Radhakrishnan, Gouri

1989-01-01

Epitaxial layers of high quality formed on <111> crystal plane. Present work reports successful growth of 1- and 2-micrometer thick layers of n-type, 7-ohms per cm, 2-inch diameter, Si<111> substrate. Growth conducted in Riber-2300(R) MBE system. Both doped and undoped layers of GaAs grown. Chamber equipped with electron gun and camera for in-situ reflection high-energy-electron diffraction measurements. RHEED patterns of surface monitored continuously during slow growth stage.

Electrical properties of aluminum contacts deposited by DC sputtering method for photovoltaic applications

NASA Astrophysics Data System (ADS)

Krawczak, Ewelina; Gułkowski, Sławomir

2017-10-01

The use of aluminum contacts is common in the process of silicon solar cells production because of low contact resistivity. It has also a great importance in thin film technology for photovoltaics, especially in copper-indium-gallium-diselenide (CIGS) devices. The final stage of CIGS cell production is the top contact deposition of high conductivity layer for lateral current collection. Such material has to be highly optically transparent as well. In order to make a contact, metal is deposited onto TCO layer with minimum shadowing to allow as much light as possible into device. The metal grid contact is being made by deposition of few microns of aluminum. The resistivity of the deposited material as well as resistance between the metal grid and TCO layer plays a great role in high quality solar cell production. This paper presents the results of four point probe conductivity analysis of Al thin films deposited by direct current (DC) magnetron sputtering method. Influence of technological parameters of the Al deposition process on sheet resistance of deposited layers has been showed. In order to obtain the lowest resistivity of the thin contact layer, optimal set of sputtering parameters, i.e. power applied, deposition time and deposition pressure was found. The resistivity of the contact between two adjacent Al metal fingers deposited onto transparent conductive Al-doped zinc oxide film has been also examined.

Depositing High-T(sub c) Superconductors On Normal-Conductor Wires

NASA Technical Reports Server (NTRS)

Kirlin, Peter S.

1994-01-01

Experiments have demonstrated feasibility of depositing thin layers of high-T(sub c) superconductor on normally electrically conductive wires. Superconductivity evident at and below critical temperature (T{sub c}) of 71 K. OMCVD, organometallic vapor deposition, apparatus coats Ag wire with layer high-T(sub c) superconductor. Superconductive phase of this material formed subsequently by annealing under controlled conditions.

Optimization of X-ray Absorbers for TES Microcalorimeters

NASA Technical Reports Server (NTRS)

Iyomoto, Naoko; Sadleir, John E.; Figueroa-Feliciano, Enectali; Saab, Tarek; Bandler, Simon; Kilbourne, Caroline; Chervenak, James; Talley, Dorothy; Finkbeiner, Fred; Brekosky, Regis

2004-01-01

We have investigated the thermal, electrical, and structural properties of Bi and BiCu films that are being developed as X-ray absorbers for transition-edge sensor (TES) microcalorimeter arrays for imaging X-ray spectroscopy. Bi could be an ideal material for an X-ray absorber due to its high X-ray stopping power and low heat capacity, but it has a low thermal conductivity, which can result in position dependence of the pulses in the absorber. In order to improve the thermal conductivity, we added Cu layers in between the Bi layers. We measured electrical and thermal conductivities of the films around 0.1 K(sub 1) the operating temperature of the TES calorimeter, to examine the films and to determine the optimal thickness of the Cu layer. From the electrical conductivity measurements, we found that the Cu is more resistive on the Bi than on a Si substrate. Together with an SEM picture of the Bi surface, we concluded that the rough surface of the Bi film makes the Cu layer resistive when the Cu layer is not thick enough t o fill in the roughness. From the thermal conductivity measurements, we determined the thermal diffusion constant to be 2 x l0(exp 3) micrometers squared per microsecond in a film that consists of 2.25 micrometers of Bi and 0.1 micrometers of Cu. We measured the position dependence in the film and found that its thermal diffusion constant is too low to get good energy resolution, because of the resistive Cu layer and/or possibly a very high heat capacity of our Bi films. We show plans to improve the thermal diffusion constant in our BiCu absorbers.

Resistivity imaging of Aluto-Langano geothermal field using 3-D magnetotelluric inversion

NASA Astrophysics Data System (ADS)

Cherkose, Biruk Abera; Mizunaga, Hideki

2018-03-01

Magnetotelluric (MT) method is a widely used geophysical method in geothermal exploration. It is used to image subsurface resistivity structures from shallow depths up to several kilometers of depth. Resistivity imaging using MT method in high-enthalpy geothermal systems is an effective tool to identify conductive clay layers that cover the geothermal systems and to detect a potential reservoir. A resistivity model is vital for deciding the location of pilot and production sites at the early stages of a geothermal project. In this study, a 3-D resistivity model of Aluto-Langano geothermal field was constructed to map structures related to a geothermal resource. The inversion program, ModEM was used to recover the 3-D resistivity model of the study area. The 3-D inversion result revealed the three main resistivity structures: a high-resistivity surface layer related to unaltered volcanic rocks at shallow depth, underlain by a conductive zone associated with the presence of conductive clay minerals, predominantly smectite. Beneath the conductive layer, the resistivity increases gradually to higher values related to the formation of high-temperature alteration minerals such as chlorite and epidote. The resistivity model recovered from 3-D inversion in Aluto-Langano corresponds very well to the conceptual model for high-enthalpy volcanic geothermal systems. The conductive clay cap is overlying the resistive propylitic upflow zone as confirmed by the geothermal wells in the area.

Effective conductivity and permittivity of unsaturated porous materials in the frequency range 1 mHz–1GHz

PubMed Central

Revil, A

2013-01-01

A model combining low-frequency complex conductivity and high-frequency permittivity is developed in the frequency range from 1 mHz to 1 GHz. The low-frequency conductivity depends on pore water and surface conductivities. Surface conductivity is controlled by the electrical diffuse layer, the outer component of the electrical double layer coating the surface of the minerals. The frequency dependence of the effective quadrature conductivity shows three domains. Below a critical frequency fp, which depends on the dynamic pore throat size Λ, the quadrature conductivity is frequency dependent. Between fp and a second critical frequency fd, the quadrature conductivity is generally well described by a plateau when clay minerals are present in the material. Clay-free porous materials with a narrow grain size distribution are described by a Cole-Cole model. The characteristic frequency fd controls the transition between double layer polarization and the effect of the high-frequency permittivity of the material. The Maxwell-Wagner polarization is found to be relatively negligible. For a broad range of frequencies below 1 MHz, the effective permittivity exhibits a strong dependence with the cation exchange capacity and the specific surface area. At high frequency, above the critical frequency fd, the effective permittivity reaches a high-frequency asymptotic limit that is controlled by the two Archie's exponents m and n like the low-frequency electrical conductivity. The unified model is compared with various data sets from the literature and is able to explain fairly well a broad number of observations with a very small number of textural and electrochemical parameters. It could be therefore used to interpret induced polarization, induction-based electromagnetic methods, and ground penetrating radar data to characterize the vadose zone. PMID:23576823

A novel durable double-conductive core-shell structure applying to the synthesis of silicon anode for lithium ion batteries

NASA Astrophysics Data System (ADS)

Xing, Yan; Shen, Tong; Guo, Ting; Wang, Xiuli; Xia, Xinhui; Gu, Changdong; Tu, Jiangping

2018-04-01

Si/C composites are currently the most commercially viable next-generation lithium-ion battery anode materials due to their high specific capacity. However, there are still many obstacles need to be overcome such as short cycle life and poor conductivity. In this work, we design and successfully synthesis an excellent durable double-conductive core-shell structure p-Si-Ag/C composites. Interestingly, this well-designed structure offers remarkable conductivity (both internal and external) due to the introduction of silver particles and carbon layer. The carbon layer acts as a protective layer to maintain the integrity of the structure as well as avoids the direct contact of silicon with electrolyte. As a result, the durable double-conductive core-shell structure p-Si-Ag/C composites exhibit outstanding cycling stability of roughly 1000 mAh g-1 after 200 cycles at a current density of 0.2 A g-1 and retain 765 mAh g-1 even at a high current density of 2 A g-1, indicating a great improvement in electrochemical performance compared with traditional silicon electrode. Our research results provide a novel pathway for production of high-performance Si-based anodes to extending the cycle life and specific capacity of commercial lithium ion batteries.

Magneto-transport Characterization of Thin Film In-plane and Cross-plane Conductivity

NASA Astrophysics Data System (ADS)

Tang, Yang; Grayson, Matthew

Thin films with highly anisotropic in-plane and cross-plane conductivities are widely used in devices, such as infrared emitters and detectors, and the proper magneto-transport characterization in both directions can reveal information about the doping density, impurities, carrier life times and band structure. This work introduces a novel method for deducing the complete anisotropic electrical conductivity tensor of such an anisotropic resistive layer atop a highly conducting bottom contact, which is a standard part of the device structure. Three strip-line contacts separated by a length scale comparable to the film thickness are applied atop the resistive thin film layer of interest, with the highly conducting back-plane as a back-contact. The potential distribution in the device is modeled, using both scaling and conformal transformation to minimize the calculated volume. As a proof of concept, triple strip-line devices for GaAs and GaAs/AlGaAs superlattice thin films are fabricated. To achieve narrow strip-line contacts with sub-micron scale widths, non-annealed Ni/Au contacts form ohmic contacts to a patterned n+-GaAs cap layer atop the anisotropic thin films. Preliminary experimental data will be presented as a validation of this method. Acknowledgment: Funded by AFOSR FA9550-15-1-0377 and AFOSR FA9550-15-1-0247.

Simultaneous enhancement of photovoltage and charge transfer in Cu{sub 2}O-based photocathode using buffer and protective layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Changli; Delaunay, Jean-Jacques, E-mail: jean@mech.t.u-tokyo.ac.jp; Hisatomi, Takashi

2016-07-18

Coating n-type buffer and protective layers on Cu{sub 2}O may be an effective means to improve the photoelectrochemical (PEC) water-splitting performance of Cu{sub 2}O-based photocathodes. In this letter, the functions of the buffer layer and protective layer on Cu{sub 2}O are examined. It is found that a Ga{sub 2}O{sub 3} buffer layer can form a buried junction with Cu{sub 2}O, which inhibits Cu{sub 2}O self-reduction as well as increases the photovoltage through a small conduction band offset between the two semiconductors. The introduction of a TiO{sub 2} thin protective layer not only improves the stability of the photocathode but alsomore » enhances the electron transfer from the photocathode surface into the electrolyte, thus resulting in an increase in photocurrent at positive potentials. These results show that the selection of overlayers with appropriate conduction band positions provides an effective strategy for obtaining a high photovoltage and high photocurrent in PEC systems.« less

Hierarchically Structured Co3O4@Pt@MnO2 Nanowire Arrays for High-Performance Supercapacitors

PubMed Central

Xia, Hui; Zhu, Dongdong; Luo, Zhentao; Yu, Yue; Shi, Xiaoqin; Yuan, Guoliang; Xie, Jianping

2013-01-01

Here we proposed a novel architectural design of a ternary MnO2-based electrode – a hierarchical Co3O4@Pt@MnO2 core-shell-shell structure, where the complemental features of the three key components (a well-defined Co3O4 nanowire array on the conductive Ti substrate, an ultrathin layer of small Pt nanoparticles, and a thin layer of MnO2 nanoflakes) are strategically combined into a single entity to synergize and construct a high-performance electrode for supercapacitors. Owing to the high conductivity of the well-defined Co3O4 nanowire arrays, in which the conductivity was further enhanced by a thin metal (Pt) coating layer, in combination with the large surface area provided by the small MnO2 nanoflakes, the as-fabricated Co3O4@Pt@MnO2 nanowire arrays have exhibited high specific capacitances, good rate capability, and excellent cycling stability. The architectural design demonstrated in this study provides a new approach to fabricate high-performance MnO2–based nanowire arrays for constructing next-generation supercapacitors. PMID:24132040

Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yeluri, Ramya, E-mail: ramyay@ece.ucsb.edu; Lu, Jing; Keller, Stacia

2015-05-04

The Current Aperture Vertical Electron Transistor (CAVET) combines the high conductivity of the two dimensional electron gas channel at the AlGaN/GaN heterojunction with better field distribution offered by a vertical design. In this work, CAVETs with buried, conductive p-GaN layers as the current blocking layer are reported. The p-GaN layer was regrown by metalorganic chemical vapor deposition and the subsequent channel regrowth was done by ammonia molecular beam epitaxy to maintain the p-GaN conductivity. Transistors with high ON current (10.9 kA/cm{sup 2}) and low ON-resistance (0.4 mΩ cm{sup 2}) are demonstrated. Non-planar selective area regrowth is identified as the limiting factormore » to transistor breakdown, using planar and non-planar n/p/n structures. Planar n/p/n structures recorded an estimated electric field of 3.1 MV/cm, while non-planar structures showed a much lower breakdown voltage. Lowering the p-GaN regrowth temperature improved breakdown in the non-planar n/p/n structure. Combining high breakdown voltage with high current will enable GaN vertical transistors with high power densities.« less

High temperature thermal management with boron nitride nanosheets.

PubMed

Wang, Yilin; Xu, Lisha; Yang, Zhi; Xie, Hua; Jiang, Puqing; Dai, Jiaqi; Luo, Wei; Yao, Yonggang; Hitz, Emily; Yang, Ronggui; Yang, Bao; Hu, Liangbing

2017-12-21

The rapid development of high power density devices requires more efficient heat dissipation. Recently, two-dimensional layered materials have attracted significant interest due to their superior thermal conductivity, ease of production and chemical stability. Among them, hexagonal boron nitride (h-BN) is electrically insulating, making it a promising thermal management material for next-generation electronics. In this work, we demonstrated that an h-BN thin film composed of layer-by-layer laminated h-BN nanosheets can effectively enhance the lateral heat dissipation on the substrate. We found that by using the BN-coated glass instead of bare glass as the substrate, the highest operating temperature of a reduced graphene oxide (RGO) based device could increase from 700 °C to 1000 °C, and at the same input power, the operating temperature of the RGO device is effectively decreased. The remarkable performance improvement using the BN coating originates from its anisotropic thermal conductivity: a high in-plane thermal conductivity of 14 W m -1 K -1 for spreading and a low cross-plane thermal conductivity of 0.4 W m -1 K -1 to avoid a hot spot right underneath the device. Our results provide an effective approach to improve the heat dissipation in integrated circuits and high power devices.

An eddy covariance system to characterize the atmospheric surface layer and turbulent latent heat fluxes over a debris-covered Himalayan glacier.

NASA Astrophysics Data System (ADS)

Litt, Maxime; Steiner, Jakob F.; Stigter, Emmy E.; Immerzeel, Walter; Shea, Joseph Michael

2017-04-01

Over debris-covered glaciers, water content variations in the debris layer can drive significant changes in its thermal conductivity and significantly impact melt rates. Since sublimation and evaporation are favoured in high-altitude conditions, e.g., low atmospheric pressure and high wind speeds, they are expected to strongly influence the water balance of the debris-layer. Dedicated latent heat fluxes measurements at the debris surface are essential to characterize the debris heat conductivity in order to assess underlying ice melt. Furthermore, the contribution of the turbulent fluxes in the surface energy balance over debris covered glacier remains uncertain since they are generally evaluated through similarity methods which might not be valid in complex terrain. We present the first results of a 15-day eddy-covariance experiment installed at the end of the monsoon (September-October) on a 3-m tower above the debris-covered Lirung glacier in Nepal. The tower also included measurements of the 4 radiation components. The eddy covariance measurements allowed for the characterization of the turbulence in the atmospheric surface layer, as well as the direct measurements of evaporation, sublimation and turbulent sensible heat fluxes. The experiment helps us to evaluate the contribution of turbulent fluxes to the surface energy balance over this debris-covered glacier, through a precise characterization of the overlying turbulent atmospheric surface layer. It also helps to study the role of the debris-layer water content changes through evaporation and sublimation and its feedback on heat conduction in this layer. The large observed turbulent fluxes play a significant role in the energy balance at the debris surface and significantly influence debris moisture, conductivity and subsequently underlying ice melt.

Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching

NASA Astrophysics Data System (ADS)

Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun

2018-06-01

Atomic switches are considered to be building blocks for future non-volatile data storage and internet of things. However, obtaining device structures capable of ultrahigh density data storage, high endurance, and long data retention, and more importantly, understanding the switching mechanisms are still a challenge for atomic switches. Here, we achieved improved resistive switching performance in a bilayer structure containing aluminum oxide, with an oxygen-deficient oxide as the top switching layer and stoichiometric oxide as the bottom switching layer, using atomic layer deposition. This bilayer device showed a high on/off ratio (105) with better endurance (∼2000 cycles) and longer data retention (104 s) than single-oxide layers. In addition, depending on the compliance current, the bilayer device could be operated in four different resistance states. Furthermore, the depth profiles of the hourglass-shaped conductive filament of the bilayer device was observed by conductive atomic force microscopy.

ZnO and related materials: Plasma-Assisted molecular beam epitaxial growth, characterization and application

NASA Astrophysics Data System (ADS)

Hong, S. K.; Chen, Y.; Ko, H. J.; Wenisch, H.; Hanada, T.; Yao, T.

2001-06-01

This paper will address features of plasma-assisted molecular beam epitaxial growth of ZnO and related materials and their characteristics. Two-dimensional, layer-by-layer growth is achieved both on c-plane sampphire by employing MgO buffer layer growth and on (0001) GaN/Al2O3 template by predepositing a low-temperature buffer layer followed by high-temperature annealing. Such two-dimensional growth results in the growth of high-quality heteroepitaxial ZnO epilayers. Biexciton emission is obtained from such high quality epilayers The polarity of heteroepitaxial ZnO epilayers is controlled by engineering the heterointerfaces. We achieved selective growth of Zn-polar and O-polar ZnO heteroepitaxial layers. The origin of different polarities can be successfully explained by an interface bonding sequence model. N-type conductivity in Gadoped ZnO epilayers is successfully controlled. High conductivity, enough to be applicable to devices, is achieved. MgxZn1-xO/ZnO heterostructures are grown and emission from a ZnO quantum well is observed. Mg incorporation in a MgZnO alloy is determined by in-situ reflection high-energy electron diffraction intensity oscillations, which enables precise control of the composition. Homoepitaxy on commericial ZnO substrates has been examined. Reflection high-energy electron diffraction intensity oscillations during homoepitaxy growth are observed.

Reduction in thermal conductivity and tunable heat capacity of inorganic/organic hybrid superlattices

NASA Astrophysics Data System (ADS)

Giri, Ashutosh; Niemelä, Janne-Petteri; Szwejkowski, Chester J.; Karppinen, Maarit; Hopkins, Patrick E.

2016-01-01

We study the influence of molecular monolayers on the thermal conductivities and heat capacities of hybrid inorganic/organic superlattice thin films fabricated via atomic/molecular layer deposition. We measure the cross plane thermal conductivities and volumetric heat capacities of TiO2- and ZnO-based superlattices with periodic inclusion of hydroquinone layers via time domain thermoreflectance. In comparison to their homogeneous counterparts, the thermal conductivities in these superlattice films are considerably reduced. We attribute this reduction in the thermal conductivity mainly due to incoherent phonon boundary scattering at the inorganic/organic interface. Increasing the inorganic/organic interface density reduces the thermal conductivity and heat capacity of these films. High-temperature annealing treatment of the superlattices results in a change in the orientation of the hydroquinone molecules to a 2D graphitic layer along with a change in the overall density of the hybrid superlattice. The thermal conductivity of the hybrid superlattice increases after annealing, which we attribute to an increase in crystallinity.

Arc initiation in cathodic arc plasma sources

DOEpatents

Anders, Andre

2002-01-01

A "triggerless" arc initiation method and apparatus is based on simply switching the arc supply voltage to the electrodes (anode and cathode). Neither a mechanical trigger electrode nor a high voltage flashover from a trigger electrode is required. A conducting path between the anode and cathode is provided, which allows a hot spot to form at a location where the path connects to the cathode. While the conductive path is eroded by the cathode spot action, plasma deposition ensures the ongoing repair of the conducting path. Arc initiation is achieved by simply applying the relatively low voltage of the arc power supply, e.g. 500 V-1 kV, with the insulator between the anode and cathode coated with a conducting layer and the current at the layer-cathode interface concentrated at one or a few contact points. The local power density at these contact points is sufficient for plasma production and thus arc initiation. A conductive surface layer, such as graphite or the material being deposited, is formed on the surface of the insulator which separates the cathode from the anode. The mechanism of plasma production (and arc initiation) is based on explosive destruction of the layer-cathode interface caused by joule heating. The current flow between the thin insulator coating and cathode occurs at only a few contact points so the current density is high.

The effect of a Ta oxygen scavenger layer on HfO 2-based resistive switching behavior: Thermodynamic stability, electronic structure, and low-bias transport

DOE PAGES

Zhong, Xiaoliang; Rungger, Ivan; Zapol, Peter; ...

2016-02-15

Reversible resistive switching between high-resistance and low-resistance states in metal-oxide-metal heterostructures makes them very interesting for applications in random access memories. While recent experimental work has shown that inserting a metallic "oxygen scavenger layer'' between the positive electrode and oxide improves device performance, the fundamental understanding of how the scavenger layer modifies the heterostructure properties is lacking. We use density functional theory to calculate thermodynamic properties and conductance of TiN/HfO 2/TiN heterostructures with and without a Ta scavenger layer. First, we show that Ta insertion lowers the formation energy of low-resistance states. Second, while the Ta scavenger layer reduces themore » Schottky barrier height in the high-resistance state by modifying the interface charge at the oxide-electrode interface, the heterostructure maintains a high resistance ratio between high-and low-resistance states. Lastly, we show that the low-bias conductance of device on-states becomes much less sensitive to the spatial distribution of oxygen removed from the HfO 2 in the presence of the Ta layer. By providing a fundamental understanding of the observed improvements with scavenger layers, we open a path to engineer interfaces with oxygen scavenger layers to control and enhance device performance. In turn, this may enable the realization of a non-volatile low-power memory technology with concomitant reduction in energy consumption by consumer electronics and offering significant benefits to society.« less

Monolithic high voltage nonlinear transmission line fabrication process

DOEpatents

Cooper, G.A.

1994-10-04

A process for fabricating sequential inductors and varistor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varistor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process. 6 figs.

Photoelectrochemical cells for conversion of solar energy to electricity and methods of their manufacture

DOEpatents

Skotheim, Terje

1984-04-10

A photoelectric device is disclosed which comprises first and second layers of semiconductive material, each of a different bandgap, with a layer of dry solid polymer electrolyte disposed between the two semiconductor layers. A layer of a polymer blend of a highly conductive polymer and a solid polymer electrolyte is further interposed between the dry solid polymer electrolyte and the first semiconductor layer. A method of manufacturing such devices is also disclosed.

Low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene

NASA Astrophysics Data System (ADS)

Hu, Bo

2015-08-01

Based on semiclassical Boltzamnn transport theory in random phase approximation, we develop a theoretical model to investigate low-temperature carrier transport properties in relatively high doped bilayer graphene. In the presence of both electron-hole puddles and band gap induced by charged impurities, we calculate low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene. Our calculated conductivity results are in excellent agreement with published experimental data in all compensated gate voltage regime of study by using potential fluctuation parameter as only one free fitting parameter, indicating that both electron-hole puddles and band gap induced by charged impurities play an important role in carrier transport. More importantly, we also find that the conductivity not only depends strongly on the total charged impurity density, but also on the top layer charged impurity density, which is different from that obtained by neglecting the opening of band gap, especially for bilayer graphene with high top layer charged impurity density.

Detection and electrical characterization of hidden layers using time-domain analysis of terahertz reflections

NASA Astrophysics Data System (ADS)

Geltner, I.; Hashimshony, D.; Zigler, A.

2002-07-01

We use a time-domain analysis method to characterize the outer layer of a multilayer structure regardless of the inner ones, thus simplifying the characterization of all the layers. We combine this method with THz reflection spectroscopy to detect nondestructively a hidden aluminum oxide layer under opaque paint and to measure its conductivity and high-frequency dielectric constant in the THz range.

Completely transparent ohmic electrode on p-type AlGaN for UV LEDs with core-shell Cu@alloy nanosilk network (Conference Presentation)

NASA Astrophysics Data System (ADS)

Cai, Duanjun; Wang, Huachun; Huang, Youyang; Wu, Chenping; Chen, Xiaohong; Gao, Na; Wei, Tongbo T.; Wang, Junxi; Li, Shuping; Kang, Junyong

2016-09-01

Metal nanowire networks hold a great promise, which have been supposed the only alternative to ITO as transparent electrodes for their excellent performance in touch screen, LED and solar cell. It is well known that the difficulty in making transparent ohmic electrode to p-type high-Al-content AlGaN conducting layer has highly constrained the further development of UV LEDs. On the IWN-2014, we reported the ohmic contact to n, p-GaN with direct graphene 3D-coated Cu nanosilk network and the fabrication of complete blue LED. On the ICNS-2015, we reported the ohmic contact to n-type AlGaN conducting layer with Cu@alloy nanosilk network. Here, we further demonstrate the latest results that a novel technique is proposed for fabricating transparent ohmic electrode to high-Al-content AlGaN p-type conducting layer in UV LEDs using Cu@alloy core-shell nanosilk network. The superfine copper nanowires (16 nm) was synthesized for coating various metals such as Ni, Zn, V or Ti with different work functions. The transmittance showed a high transparency (> 90%) over a broad wavelength range from 200 to 3000 nm. By thermal annealing, ohmic contact was achieved on p-type Al0.5Ga0.5N layer with Cu@Ni nanosilk network, showing clearly linear I-V curve. By skipping the p-type GaN cladding layer, complete UV LED chip was fabricated and successfully lit with bright emission at 276 nm.

Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields

DOEpatents

Chaffin, R.J.; Dawson, L.R.; Fritz, I.J.; Osbourn, G.C.; Zipperian, T.E.

1987-06-08

A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space. The layer thicknesses of the quantum well layers are selected to provide a superlattice L/sub 2D/-valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley. 2 figs.

Repeatability Measurements of Apparent Thermal Conductivity of Multilayer Insulation (MLI)

NASA Astrophysics Data System (ADS)

Vanderlaan, M.; Stubbs, D.; Ledeboer, K.; Ross, J.; Van Sciver, S.; Guo, W.

2017-12-01

This report presents and discusses the results of repeatability experiments gathered from the multi-layer insulation thermal conductivity experiment (MIKE) for the measurement of the apparent thermal conductivity of multi-layer insulation (MLI) at variable boundary temperatures. Our apparatus uses a calibrated thermal link between the lower temperature shield of a concentric cylinder insulation assembly and the cold head of a cryocooler to measure the heat leak. In addition, thermocouple readings are taken in-between the MLI layers. These measurements are part of a multi-phase NASA-Yetispace-FSU collaboration to better understand the repeatability of thermal conductivity measurements of MLI. NASA provided five 25 layer coupons and requested boundary temperatures of 20 K and 300 K. Yetispace provided ten 12-layer coupons and requested boundary temperatures of 77 K and 293 K. Test conditions must be met for a duration of four hours at a steady state variance of less than 0.1 K/hr on both cylinders. Temperatures from three Cernox® temperature sensors on each of the two cylinders are averaged to determine the boundary temperatures. A high vacuum, less than 10-5 torr, is maintained for the duration of testing. Layer density varied from 17.98 - 26.36 layers/cm for Yetispace coupons and 13.05 - 17.45 layers/cm for the NASA coupons. The average measured heat load for the Yetispace coupons was 2.40 W for phase-one and 2.92 W for phase-two. The average measured heat load for the NASA coupons was 1.10 W. This suggests there is still unknown variance of MLI performance. It has been concluded, variations in the insulation installation heavy effect the apparent thermal conductivity and are not solely dependent on layer density.

Joint Inversion of 1-D Magnetotelluric and Surface-Wave Dispersion Data with an Improved Multi-Objective Genetic Algorithm and Application to the Data of the Longmenshan Fault Zone

NASA Astrophysics Data System (ADS)

Wu, Pingping; Tan, Handong; Peng, Miao; Ma, Huan; Wang, Mao

2018-05-01

Magnetotellurics and seismic surface waves are two prominent geophysical methods for deep underground exploration. Joint inversion of these two datasets can help enhance the accuracy of inversion. In this paper, we describe a method for developing an improved multi-objective genetic algorithm (NSGA-SBX) and applying it to two numerical tests to verify the advantages of the algorithm. Our findings show that joint inversion with the NSGA-SBX method can improve the inversion results by strengthening structural coupling when the discontinuities of the electrical and velocity models are consistent, and in case of inconsistent discontinuities between these models, joint inversion can retain the advantages of individual inversions. By applying the algorithm to four detection points along the Longmenshan fault zone, we observe several features. The Sichuan Basin demonstrates low S-wave velocity and high conductivity in the shallow crust probably due to thick sedimentary layers. The eastern margin of the Tibetan Plateau shows high velocity and high resistivity in the shallow crust, while two low velocity layers and a high conductivity layer are observed in the middle lower crust, probably indicating the mid-crustal channel flow. Along the Longmenshan fault zone, a high conductivity layer from 8 to 20 km is observed beneath the northern segment and decreases with depth beneath the middle segment, which might be caused by the elevated fluid content of the fault zone.

Ultrahigh performance heat spreader based on gas-liquid exfoliation boron nitride nanosheets.

PubMed

Ding, Jiheng; Zhao, Hongran; Wang, Qiaolei; Peng, Wanjun; Yu, Haibin

2017-11-24

Due to their high thermal conductivity and insulation performance, boron nitride nanosheets (BNNS) have great promise to fabricate thermal management equipment for application in power electronics. The liquid-phase exfoliation route has been regarded as the most commonly used approach to produce single and few-layered BNNS for many research fields. However, this process takes a long time, and the production yield is extremely low. In this work, an efficient technique to obtain few-layered (mostly < 5 layers), high-yield (∼33%), and plane-defect-free BNNS by the combination of liquid N 2 (L-N 2 ) gasification and liquid exfoliation was developed. The as-obtained BNNS suspensions could be vacuum filtered to make a thermal conductive film named a BNNS heat spreader which possessed a superior thermal conductivity of 61.2 W m -1 K -1 at room temperature. In addition, we also proved that the thermal conductivity of the BNNS heat spreader increased with the increase of density, creating an approach for fine tuning the thermal property of this heat spreader.

Ultrahigh performance heat spreader based on gas-liquid exfoliation boron nitride nanosheets

NASA Astrophysics Data System (ADS)

Ding, Jiheng; Zhao, Hongran; Wang, Qiaolei; Peng, Wanjun; Yu, Haibin

2017-11-01

Due to their high thermal conductivity and insulation performance, boron nitride nanosheets (BNNS) have great promise to fabricate thermal management equipment for application in power electronics. The liquid-phase exfoliation route has been regarded as the most commonly used approach to produce single and few-layered BNNS for many research fields. However, this process takes a long time, and the production yield is extremely low. In this work, an efficient technique to obtain few-layered (mostly < 5 layers), high-yield (˜33%), and plane-defect-free BNNS by the combination of liquid N2 (L-N2) gasification and liquid exfoliation was developed. The as-obtained BNNS suspensions could be vacuum filtered to make a thermal conductive film named a BNNS heat spreader which possessed a superior thermal conductivity of 61.2 W m-1 K-1 at room temperature. In addition, we also proved that the thermal conductivity of the BNNS heat spreader increased with the increase of density, creating an approach for fine tuning the thermal property of this heat spreader.

Forming-free resistive switching characteristics of Ag/CeO2/Pt devices with a large memory window

NASA Astrophysics Data System (ADS)

Zheng, Hong; Kim, Hyung Jun; Yang, Paul; Park, Jong-Sung; Kim, Dong Wook; Lee, Hyun Ho; Kang, Chi Jung; Yoon, Tae-Sik

2017-05-01

Ag/CeO2(∼45 nm)/Pt devices exhibited forming-free bipolar resistive switching with a large memory window (low-resistance-state (LRS)/high-resistance-state (HRS) ratio >106) at a low switching voltage (<±1 ∼ 2 V) in voltage sweep condition. Also, they retained a large memory window (>104) at a pulse operation (±5 V, 50 μs). The high oxygen ionic conductivity of the CeO2 layer as well as the migration of silver facilitated the formation of filament for the transition to LRS at a low voltage without a high voltage forming operation. Also, a certain amount of defects in the CeO2 layer was required for stable HRS with space-charge-limited-conduction, which was confirmed comparing the devices with non-annealed and annealed CeO2 layers.

Stacked mechanical nanogenerator comprising piezoelectric semiconducting nanostructures and Schottky conductive contacts

DOEpatents

Wang, Zhong L [Marietta, GA; Xu, Sheng [Atlanta, GA

2011-08-23

An electric power generator includes a first conductive layer, a plurality of semiconducting piezoelectric nanostructures, a second conductive layer and a plurality of conductive nanostructures. The first conductive layer has a first surface from which the semiconducting piezoelectric nanostructures extend. The second conductive layer has a second surface and is parallel to the first conductive layer so that the second surface faces the first surface of the first conductive layer. The conductive nanostructures depend downwardly therefrom. The second conductive layer is spaced apart from the first conductive layer at a distance so that when a force is applied, the semiconducting piezoelectric nanostructures engage the conductive nanostructures so that the piezoelectric nanostructures bend, thereby generating a potential difference across the at semiconducting piezoelectric nanostructures and also thereby forming a Schottky barrier between the semiconducting piezoelectric nanostructures and the conductive nanostructures.

Fabric circuits and method of manufacturing fabric circuits

NASA Technical Reports Server (NTRS)

Chu, Andrew W. (Inventor); Dobbins, Justin A. (Inventor); Scully, Robert C. (Inventor); Trevino, Robert C. (Inventor); Lin, Greg Y. (Inventor); Fink, Patrick W. (Inventor)

2011-01-01

A flexible, fabric-based circuit comprises a non-conductive flexible layer of fabric and a conductive flexible layer of fabric adjacent thereto. A non-conductive thread, an adhesive, and/or other means may be used for attaching the conductive layer to the non-conductive layer. In some embodiments, the layers are attached by a computer-driven embroidery machine at pre-determined portions or locations in accordance with a pre-determined attachment layout before automated cutting. In some other embodiments, an automated milling machine or a computer-driven laser using a pre-designed circuit trace as a template cuts the conductive layer so as to separate an undesired portion of the conductive layer from a desired portion of the conductive layer. Additional layers of conductive fabric may be attached in some embodiments to form a multi-layer construct.

Evaluation of a technique to generate artificially thickened boundary layers in supersonic and hypersonic flows

NASA Technical Reports Server (NTRS)

Porro, A. R.; Hingst, W. R.; Davis, D. O.; Blair, A. B., Jr.

1991-01-01

The feasibility of using a contoured honeycomb model to generate a thick boundary layer in high-speed, compressible flow was investigated. The contour of the honeycomb was tailored to selectively remove momentum in a minimum of streamwise distance to create an artificially thickened turbulent boundary layer. Three wind tunnel experiments were conducted to verify the concept. Results indicate that this technique is a viable concept, especially for high-speed inlet testing applications. In addition, the compactness of the honeycomb boundary layer simulator allows relatively easy integration into existing wind tunnel model hardware.

Anisotropic electrical and thermal conductivity in Bi2AE2Co2O8+δ [AE = Ca, Sr1-xBax (x = 0.0, 0.25, 0.5, 0.75, 1.0)] single crystals

NASA Astrophysics Data System (ADS)

Dong, Song-Tao; Zhang, Bin-Bin; Xiong, Ye; Lv, Yang-Yang; Yao, Shu-Hua; Chen, Y. B.; Zhou, Jian; Zhang, Shan-Tao; Chen, Yan-Feng

2015-09-01

Bi2AE2Co2O8+δ (AE represents alkaline earth), constructed by stacking of rock-salt Bi2AE2O4 and triangle CoO2 layers alternatively along c-axis, is one of promising thermoelectric oxides. The most impressive feature of Bi2AE2Co2O8+δ, as reported previously, is their electrical conductivity mainly lying along CoO2 plane, adjusting Bi2AE2O4 layer simultaneously manipulates both thermal conductivity and electrical conductivity. It in turn optimizes thermoelectric performance of these materials. In this work, we characterize the anisotropic thermal and electrical conductivity along both ab-plane and c-direction of Bi2AE2Co2O8+δ (AE = Ca, Sr, Ba, Sr1-xBax) single crystals. The results substantiate that isovalence replacement in Bi2AE2Co2O8+δ remarkably modifies their electrical property along ab-plane; while their thermal conductivity along ab-plane only has a slightly difference. At the same time, both the electrical conductivity and thermal conductivity along c-axis of these materials also have dramatic changes. Certainly, the electrical resistance along c-axis is too high to be used as thermoelectric applications. These results suggest that adjusting nano-block Bi2AE2O4 layer in Bi2AE2Co2O8+δ cannot modify the thermal conductivity along high electrical conductivity plane (ab-plane here). The evolution of electrical property is discussed by Anderson localization and electron-electron interaction U. And the modification of thermal conductivity along c-axis is attributed to the microstructure difference. This work sheds more light on the manipulation of the thermal and electrical conductivity in the layered thermoelectric materials.

Unusual Enhancement in Intrinsic Thermal Conductivity of Multilayer Graphene by Tensile Strains

DOE PAGES

Kuang, Youdi; Lindsay, Lucas R.; Huang, Baoling

2015-01-01

High basal plane thermal conductivity k of multi-layer graphene makes it promising for thermal management applications. Here we examine the effects of tensile strain on thermal transport in this system. Using a first principles Boltzmann-Peierls equation for phonon transport approach, we calculate the room-temperature in-plane lattice k of multi-layer graphene (up to four layers) and graphite under different isotropic tensile strains. The calculated in-plane k of graphite, finite mono-layer graphene and 3-layer graphene agree well with previous experiments. The dimensional transitions of the intrinsic k and the extent of the diffusive transport regime from mono-layer graphene to graphite are presented.more » We find a peak enhancement of intrinsic k for multi-layer graphene and graphite with increasing strain and the largest enhancement amplitude is about 40%. In contrast the calculated intrinsic k with tensile strain decreases for diamond and diverges for graphene, we show that the competition between the decreased mode heat capacities and the increased lifetimes of flexural phonons with increasing strain contribute to this k behavior. Similar k behavior is observed for 2-layer hexagonal boron nitride systems, suggesting that it is an inherent thermal transport property in multi-layer systems assembled of purely two dimensional atomic layers. This study provides insights into engineering k of multi-layer graphene and boron nitride by strain and into the nature of thermal transport in quasi-two-dimensional and highly anisotropic systems.« less

Passive safety device and internal short tested method for energy storage cells and systems

DOEpatents

Keyser, Matthew; Darcy, Eric; Long, Dirk; Pesaran, Ahmad

2015-09-22

A passive safety device for an energy storage cell for positioning between two electrically conductive layers of the energy storage cell. The safety device also comprising a separator and a non-conductive layer. A first electrically conductive material is provided on the non-conductive layer. A first opening is formed through the separator between the first electrically conductive material and one of the electrically conductive layers of the energy storage device. A second electrically conductive material is provided adjacent the first electrically conductive material on the non-conductive layer, wherein a space is formed on the non-conductive layer between the first and second electrically conductive materials. A second opening is formed through the non-conductive layer between the second electrically conductive material and another of the electrically conductive layers of the energy storage device. The first and second electrically conductive materials combine and exit at least partially through the first and second openings to connect the two electrically conductive layers of the energy storage device at a predetermined temperature.

Numerical Study on Density Gradient Carbon-Carbon Composite for Vertical Launching System

NASA Astrophysics Data System (ADS)

Yoon, Jin-Young; Kim, Chun-Gon; Lim, Juhwan

2018-04-01

This study presents new carbon-carbon (C/C) composite that has a density gradient within single material, and estimates its heat conduction performance by a numerical method. To address the high heat conduction of a high-density C/C, which can cause adhesion separation in the steel structures of vertical launching systems, density gradient carbon-carbon (DGCC) composite is proposed due to its exhibiting low thermal conductivity as well as excellent ablative resistance. DGCC is manufactured by hybridizing two different carbonization processes into a single carbon preform. One part exhibits a low density using phenolic resin carbonization to reduce heat conduction, and the other exhibits a high density using thermal gradient-chemical vapor infiltration for excellent ablative resistance. Numerical analysis for DGCC is performed with a heat conduction problem, and internal temperature distributions are estimated by the forward finite difference method. Material properties of the transition density layer, which is inevitably formed during DGCC manufacturing, are assumed to a combination of two density layers for numerical analysis. By comparing numerical results with experimental data, we validate that DGCC exhibits a low thermal conductivity, and it can serve as highly effective ablative material for vertical launching systems.

High-performance and environmentally stable planar heterojunction perovskite solar cells based on a solution-processed copper-doped nickel oxide hole-transporting layer.

PubMed

Kim, Jong H; Liang, Po-Wei; Williams, Spencer T; Cho, Namchul; Chueh, Chu-Chen; Glaz, Micah S; Ginger, David S; Jen, Alex K-Y

2015-01-27

An effective approach to significantly increase the electrical conductivity of a NiOx hole-transporting layer (HTL) to achieve high-efficiency planar heterojunction perovskite solar cells is demonstrated. Perovskite solar cells based on using Cu-doped NiOx HTL show a remarkably improved power conversion efficiency up to 15.40% due to the improved electrical conductivity and enhanced perovskite film quality. General applicability of Cu-doped NiOx to larger bandgap perovskites is also demonstrated in this study. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

NOL specular spin-valve heads using an ultrathin CoFe free layer

NASA Astrophysics Data System (ADS)

Fukuzawa, Hideaki; Koi, Katsuhiko; Tomita, Hiroshi; Fuke, Hiromi Niu; Kamiguchi, Yuzo; Iwasaki, Hitoshi; Sahashi, Masashi

2001-10-01

This paper reports the film and head performance of specular spin valves with nano-oxide layer (NOL-SPSV). A large MR ratio of 17% was obtained by using an ultrathin CoFe free layer with a high conductance Cu layer, which decreases the sense current field of a free layer and brings good soft magnetic characteristics. Prototype heads with a read track width of 0.47-0.61 μm were fabricated by using NOL-SPSV films with an MR ratio of 14-15%, Hua˜400 Oe, and Hc˜5 Oe. High output signal voltage of 8-11 mV/μm was realized in the NOL-SPSV heads.

Facile synthesis of 3D MnNi-layered double hydroxides (LDH)/graphene composites from directly graphites for pseudocapacitor and their electrochemical analysis

NASA Astrophysics Data System (ADS)

Lee, Ilbok; Jeong, Gyoung Hwa; An, Soyeon; Kim, Sang-Wook; Yoon, Songhun

2018-01-01

Herein, MnNi-layered double hydroxides (LDH) were imbibed within the interlayers of graphene nanosheets. The anionic surfactant, sodium dodecyl sulfate played a role of graphite exfoliator adding interaction with metal cations. Using this process, layered MnNi-LDH-graphene nanocomposite was prepared without formation of graphene oxide. When applied into pseudocapacitor electrode, LDH-graphene with optimal ratio between Mn and Ni exhibited very stable cycle with 90% at 1400 cycles and high energy 47.29 Wh kg-1 at the power density of 7473 W kg-1, which was attributed to highly stable layered LDH structure within conductive graphene layers.

Air cathode structure manufacture

DOEpatents

Momyer, William R.; Littauer, Ernest L.

1985-01-01

An improved air cathode structure for use in primary batteries and the like. The cathode structure includes a matrix active layer, a current collector grid on one face of the matrix active layer, and a porous, nonelectrically conductive separator on the opposite face of the matrix active layer, the collector grid and separator being permanently bonded to the matrix active layer. The separator has a preselected porosity providing low IR losses and high resistance to air flow through the matrix active layer to maintain high bubble pressure during operation of the battery. In the illustrated embodiment, the separator was formed of porous polypropylene. A thin hydrophobic film is provided, in the preferred embodiment, on the current collecting metal grid.

Probing ternary solvent effect in high V oc polymer solar cells using advanced AFM techniques

DOE PAGES

Li, Chao; Soleman, Mikhael; Lorenzo, Josie; ...

2016-01-25

This work describes a simple method to develop a high V oc low band gap PSCs. In addition, two new atomic force microscopy (AFM)-based nanoscale characterization techniques to study the surface morphology and physical properties of the structured active layer are introduced. With the help of ternary solvent processing of the active layer and C 60 buffer layer, a bulk heterojunction PSC with V oc more than 0.9 V and conversion efficiency 7.5% is developed. In order to understand the fundamental properties of the materials ruling the performance of the PSCs tested, AFM-based nanoscale characterization techniques including Pulsed-Force-Mode AFM (PFM-AFM)more » and Mode-Synthesizing AFM (MSAFM) are introduced. Interestingly, MSAFM exhibits high sensitivity for direct visualization of the donor–acceptor phases in the active layer of the PSCs. Lastly, conductive-AFM (cAFM) studies reveal local variations in conductivity in the donor and acceptor phases as well as a significant increase in photocurrent in the PTB7:ICBA sample obtained with the ternary solvent processing.« less

Thermal Transport at Solid-Liquid Interfaces: High Pressure Facilitates Heat Flow through Nonlocal Liquid Structuring.

PubMed

Han, Haoxue; Mérabia, Samy; Müller-Plathe, Florian

2017-05-04

The integration of three-dimensional microelectronics is hampered by overheating issues inherent to state-of-the-art integrated circuits. Fundamental understanding of heat transfer across soft-solid interfaces is important for developing efficient heat dissipation capabilities. At the microscopic scale, the formation of a dense liquid layer at the solid-liquid interface decreases the interfacial heat resistance. We show through molecular dynamics simulations of n-perfluorohexane on a generic wettable surface that enhancement of the liquid structure beyond a single adsorbed layer drastically enhances interfacial heat conductance. Pressure is used to control the extent of the liquid layer structure. The interfacial thermal conductance increases with pressure values up to 16.2 MPa at room temperature. Furthermore, it is shown that liquid structuring enhances the heat-transfer rate of high-energy lattice waves by broadening the transmission peaks in the heat flux spectrum. Our results show that pressure is an important external parameter that may be used to control interfacial heat conductance at solid-soft interfaces.

An Iterative Method for Problems with Multiscale Conductivity

PubMed Central

Kim, Hyea Hyun; Minhas, Atul S.; Woo, Eung Je

2012-01-01

A model with its conductivity varying highly across a very thin layer will be considered. It is related to a stable phantom model, which is invented to generate a certain apparent conductivity inside a region surrounded by a thin cylinder with holes. The thin cylinder is an insulator and both inside and outside the thin cylinderare filled with the same saline. The injected current can enter only through the holes adopted to the thin cylinder. The model has a high contrast of conductivity discontinuity across the thin cylinder and the thickness of the layer and the size of holes are very small compared to the domain of the model problem. Numerical methods for such a model require a very fine mesh near the thin layer to resolve the conductivity discontinuity. In this work, an efficient numerical method for such a model problem is proposed by employing a uniform mesh, which need not resolve the conductivity discontinuity. The discrete problem is then solved by an iterative method, where the solution is improved by solving a simple discrete problem with a uniform conductivity. At each iteration, the right-hand side is updated by integrating the previous iterate over the thin cylinder. This process results in a certain smoothing effect on microscopic structures and our discrete model can provide a more practical tool for simulating the apparent conductivity. The convergence of the iterative method is analyzed regarding the contrast in the conductivity and the relative thickness of the layer. In numerical experiments, solutions of our method are compared to reference solutions obtained from COMSOL, where very fine meshes are used to resolve the conductivity discontinuity in the model. Errors of the voltage in L2 norm follow O(h) asymptotically and the current density matches quitewell those from the reference solution for a sufficiently small mesh size h. The experimental results present a promising feature of our approach for simulating the apparent conductivity related to changes in microscopic cellular structures. PMID:23304238

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Guangmin; Sun, Jie; Jin, Yang

A 3D graphene cage with a thin layer of electrodeposited nickel phosphosulfide for Li 2S impregnation, using ternary nickel phosphosulphide as a highly conductive coating layer for stabilized polysulfide chemistry, is accomplished by the combination of theoretical and experimental studies. As a result, the 3D interconnected graphene cage structure leads to high capacity, good rate capability and excellent cycling stability in a Li 2S cathode.

Hybrid nanomaterial of α-Co(OH)2 nanosheets and few-layer graphene as an enhanced electrode material for supercapacitors.

PubMed

Cheng, J P; Liu, L; Ma, K Y; Wang, X; Li, Q Q; Wu, J S; Liu, F

2017-01-15

Supercapacitor with metal hydroxide nanosheets as electrode can have high capacitance. However, the cycling stability and high rate capacity is low due to the low electrical conductivity. Here, the exfoliated α-Co(OH) 2 nanosheets with high capacitance has been assembled on few-layer graphene with high electric conductivity by a facile yet effective and scalable solution method. Exfoliated hydrotalcite-like α-Co(OH) 2 nanosheets and few-layer graphene suspensions were prepared by a simple ultrasonication in formamide and N-methyl-2-pyrrolidone, respectively. Subsequently, a hybrid was made by self-assembly of α-Co(OH) 2 and few-layer graphene when the two dispersions were mixed at room temperature. The hybrid material provided a high specific capacitance of 567.1F/g at 1A/g, while a better rate capability and better stability were achieved compared to that mad of pristine and single exfoliated α-Co(OH) 2 . When the hybrid nanocomposite was used as a positive electrode and activated carbon was applied as negative electrode to assembly an asymmetric capacitor, an energy density of 21.2Wh/kg at a power density of 0.41kW/kg within a potential of 1.65V was delivered. The high electrochemical performance and facile solution-based synthesis method suggested that the hybrid of exfoliated α-Co(OH) 2 /few-layer graphene could be a potential electrode material for electrochemical capacitor. Copyright © 2016 Elsevier Inc. All rights reserved.

Application of electrical and electromagnetic depth sounding in highly conductive sediments: The concept of vertical electrical anisotropy

NASA Astrophysics Data System (ADS)

Köhler, A.; Bahr, K.

2010-12-01

“Nördlinger Ries” is a meteorite crater in the Bavarian ‘Alb’ of Germany that was formed 15 million years ago, and subsequently filled with salty water. Evaporation resulted in an approximately 300 meter thick layer of young, highly conductive sediments. Audio-frequency Magnetotelluric (AMT) and geoelectric depth sounding (VES) techniques were used to analyze the electrical properties of these sediments. The apparent resistivities measured by the two methods are different, which can be explained by vertical electrical anisotropy (horizontal layering). Applying a joint forward modelling technique with resistivity variations found by a Monte Carlo method results in a best fit model containing a large number of layers, while separate inversions of the two data sets yield 3-layer models. Comparisons of the coefficient of anisotropy with drilling core samples demonstrate the reliability of the results. One difficulty of the AMT method is the low signal-to-noise ratio, because of the source’s deadband. Some suggestions for an “intelligent” processing are presented. Kerch (this session) is employing the result of the integrated conductivity as an input for 3D modelling of collected MT data.

CVD Polymers for Devices and Device Fabrication.

PubMed

Wang, Minghui; Wang, Xiaoxue; Moni, Priya; Liu, Andong; Kim, Do Han; Jo, Won Jun; Sojoudi, Hossein; Gleason, Karen K

2017-03-01

Chemical vapor deposition (CVD) polymerization directly synthesizes organic thin films on a substrate from vapor phase reactants. Dielectric, semiconducting, electrically conducting, and ionically conducting CVD polymers have all been readily integrated into devices. The absence of solvent in the CVD process enables the growth of high-purity layers and avoids the potential of dewetting phenomena, which lead to pinhole defects. By limiting contaminants and defects, ultrathin (<10 nm) CVD polymeric device layers have been fabricated in multiple laboratories. The CVD method is particularly suitable for synthesizing insoluble conductive polymers, layers with high densities of organic functional groups, and robust crosslinked networks. Additionally, CVD polymers are prized for the ability to conformally cover rough surfaces, like those of paper and textile substrates, as well as the complex geometries of micro- and nanostructured devices. By employing low processing temperatures, CVD polymerization avoids damaging substrates and underlying device layers. This report discusses the mechanisms of the major CVD polymerization techniques and the recent progress of their applications in devices and device fabrication, with emphasis on initiated CVD (iCVD) and oxidative CVD (oCVD) polymerization. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Highly spectrum-selective ultraviolet photodetector based on p-NiO/n-IGZO thin film heterojunction structure.

PubMed

Li, H K; Chen, T P; Hu, S G; Li, X D; Liu, Y; Lee, P S; Wang, X P; Li, H Y; Lo, G Q

2015-10-19

Ultraviolet photodetector with p-n heterojunction is fabricated by magnetron sputtering deposition of n-type indium gallium zinc oxide (n-IGZO) and p-type nickel oxide (p-NiO) thin films on ITO glass. The performance of the photodetector is largely affected by the conductivity of the p-NiO thin film, which can be controlled by varying the oxygen partial pressure during the deposition of the p-NiO thin film. A highly spectrum-selective ultraviolet photodetector has been achieved with the p-NiO layer with a high conductivity. The results can be explained in terms of the "optically-filtering" function of the NiO layer.

Highly conducting and preferred <220> oriented boron doped nc–Si films for window layers in nc–Si solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mondal, Praloy; Das, Debajyoti, E-mail: erdd@iacs.res.in

2016-05-23

Growth and optimization of the boron dopednanocrystalline silicon (nc-Si) films have been studied by varyingthe gaspressure applied to the hydrogendiluted silane plasma in RF (13.56 MHz) plasma-enhanced chemical vapor deposition (PECVD) system, using diborane (B{sub 2}H{sub 6}) as the dopant gas. High magnitudeof electrical conductivity (~10{sup 2} S cm{sup −1}) and<220>orientedcrystallographic lattice planes have been obtained with high crystalline volume fraction (~86 %) at an optimum pressure of 2.5 Torr. XRD and Raman studies reveal good crystallinity with preferred orientation, suitable for applications in stacked layer devices, particularly in nc–Si solar cells.

Flowable Conducting Particle Networks in Redox-Active Electrolytes for Grid Energy Storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hatzell, K. B.; Boota, M.; Kumbur, E. C.

2015-01-01

This study reports a new hybrid approach toward achieving high volumetric energy and power densities in an electrochemical flow capacitor for grid energy storage. The electrochemical flow capacitor suffers from high self-discharge and low energy density because charge storage is limited to the available surface area (electric double layer charge storage). Here, we examine two carbon materials as conducting particles in a flow battery electrolyte containing the VO2+/VO2+ redox couple. Highly porous activated carbon spheres (CSs) and multi-walled carbon nanotubes (MWCNTs) are investigated as conducting particle networks that facilitate both faradaic and electric double layer charge storage. Charge storage contributionsmore » (electric double layer and faradaic) are distinguished for flow-electrodes composed of MWCNTs and activated CSs. A MWCNT flow-electrode based in a redox-active electrolyte containing the VO2+/VO2+ redox couple demonstrates 18% less self-discharge, 10 X more energy density, and 20 X greater power densities (at 20 mV s-1) than one based on a non-redox active electrolyte. Furthermore, a MWCNT redox-active flow electrode demonstrates 80% capacitance retention, and >95% coulombic efficiency over 100 cycles, indicating the feasibility of utilizing conducting networks with redox chemistries for grid energy storage.« less

Flowable conducting particle networks in redox-active electrolytes for grid energy storage

DOE PAGES

Hatzell, K. B.; Boota, M.; Kumbur, E. C.; ...

2015-01-09

This paper reports a new hybrid approach toward achieving high volumetric energy and power densities in an electrochemical flow capacitor for grid energy storage. The electrochemical flow capacitor suffers from high self-discharge and low energy density because charge storage is limited to the available surface area (electric double layer charge storage). Here, we examine two carbon materials as conducting particles in a flow battery electrolyte containing the VO 2+/VO 2 + redox couple. Highly porous activated carbon spheres (CSs) and multi-walled carbon nanotubes (MWCNTs) are investigated as conducting particle networks that facilitate both faradaic and electric double layer charge storage.more » Charge storage contributions (electric double layer and faradaic) are distinguished for flow-electrodes composed of MWCNTs and activated CSs. A MWCNT flow-electrode based in a redox-active electrolyte containing the VO 2+/VO 2 + redox couple demonstrates 18% less self-discharge, 10 X more energy density, and 20 X greater power densities (at 20 mV s -1) than one based on a non-redox active electrolyte. Additionally, a MWCNT redox-active flow electrode demonstrates 80% capacitance retention, and >95% coulombic efficiency over 100 cycles, indicating the feasibility of utilizing conducting networks with redox chemistries for grid energy storage.« less

Fabrication of Aluminum-Based Thermal Radiation Plate for Thermoelectric Module Using Aluminum Anodic Oxidization and Copper Electroplating.

PubMed

Choi, Yi Taek; Bae, Sung Hwa; Son, Injoon; Sohn, Ho Sang; Kim, Kyung Tae; Ju, Young-Wan

2018-09-01

In this study, electrolytic etching, anodic oxidation, and copper electroplating were applied to aluminum to produce a plate on which a copper circuit for a thermoelectric module was formed. An oxide film insulating layer was formed on the aluminum through anodic oxidation, and platinum was coated by sputtering to produce conductivity. Finally, copper electroplating was performed directly on the substrate. In this structure, the copper plating layer on the insulating layer served as a conductive layer in the circuit. The adhesion of the copper plating layer was improved by electrolytic etching. As a result, the thermoelectric module fabricated in this study showed excellent adhesion and good insulation characteristics. It is expected that our findings can contribute to the manufacture of plates applicable to thermoelectric modules with high dissipation performance.

Conductive polymer layers to limit transfer of fuel reactants to catalysts of fuel cells to reduce reactant crossover

DOEpatents

Stanis, Ronald J.; Lambert, Timothy N.

2016-12-06

An apparatus of an aspect includes a fuel cell catalyst layer. The fuel cell catalyst layer is operable to catalyze a reaction involving a fuel reactant. A fuel cell gas diffusion layer is coupled with the fuel cell catalyst layer. The fuel cell gas diffusion layer includes a porous electrically conductive material. The porous electrically conductive material is operable to allow the fuel reactant to transfer through the fuel cell gas diffusion layer to reach the fuel cell catalyst layer. The porous electrically conductive material is also operable to conduct electrons associated with the reaction through the fuel cell gas diffusion layer. An electrically conductive polymer material is coupled with the fuel cell gas diffusion layer. The electrically conductive polymer material is operable to limit transfer of the fuel reactant to the fuel cell catalyst layer.

Electrode structure and method for making the same

DOEpatents

Affinito, John D.; Lowe, Gregory K.

2015-05-26

Electrode structures, and more specifically, electrode structures for use in electrochemical cells, are provided. The electrode structures described herein may include one or more protective layers. In one set of embodiments, a protective layer may be formed by exposing a lithium metal surface to a plasma comprising ions of a gas to form a ceramic layer on top of the lithium metal. The ceramic layer may be highly conductive to lithium ions and may protect the underlying lithium metal surface from reaction with components in the electrolyte. In some cases, the ions may be nitrogen ions and a lithium nitride layer may be formed on the lithium metal surface. In other embodiments, the protective layer may be formed by converting lithium to lithium nitride at high pressures. Other methods for forming protective layers are also provided.

Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films

NASA Astrophysics Data System (ADS)

Li, Na; Chen, Fei; Shen, Qiang; Wang, Chuanbin; Zhang, Lianmeng

2013-03-01

A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.

Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching.

PubMed

Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun

2018-06-08

Atomic switches are considered to be building blocks for future non-volatile data storage and internet of things. However, obtaining device structures capable of ultrahigh density data storage, high endurance, and long data retention, and more importantly, understanding the switching mechanisms are still a challenge for atomic switches. Here, we achieved improved resistive switching performance in a bilayer structure containing aluminum oxide, with an oxygen-deficient oxide as the top switching layer and stoichiometric oxide as the bottom switching layer, using atomic layer deposition. This bilayer device showed a high on/off ratio (10 5 ) with better endurance (∼2000 cycles) and longer data retention (10 4 s) than single-oxide layers. In addition, depending on the compliance current, the bilayer device could be operated in four different resistance states. Furthermore, the depth profiles of the hourglass-shaped conductive filament of the bilayer device was observed by conductive atomic force microscopy.

Evaluation of Flush-Mounted, S-Duct Inlets With Large Amounts of Boundary Layer Ingestion

NASA Technical Reports Server (NTRS)

Berrier, Bobby L.; Morehouse, Melissa B.

2003-01-01

A new high Reynolds number test capability for boundary layer ingesting inlets has been developed for the NASA Langley Research Center 0.3-Meter Transonic Cryogenic Tunnel. Using this new capability, an experimental investigation of four S-duct inlet configurations with large amounts of boundary layer ingestion (nominal boundary layer thickness of about 40% of inlet height) was conducted at realistic operating conditions (high subsonic Mach numbers and full-scale Reynolds numbers). The objectives of this investigation were to 1) develop a new high Reynolds number, boundary-layer ingesting inlet test capability, 2) evaluate the performance of several boundary layer ingesting S-duct inlets, 3) provide a database for CFD tool validation, and 4) provide a baseline inlet for future inlet flow-control studies. Tests were conducted at Mach numbers from 0.25 to 0.83, Reynolds numbers (based on duct exit diameter) from 5.1 million to a fullscale value of 13.9 million, and inlet mass-flow ratios from 0.39 to 1.58 depending on Mach number. Results of this investigation indicate that inlet pressure recovery generally decreased and inlet distortion generally increased with increasing Mach number. Except at low Mach numbers, increasing inlet mass-flow increased pressure recovery and increased distortion. Increasing the amount of boundary layer ingestion (by decreasing inlet throat height and increasing inlet throat width) or ingesting a boundary layer with a distorted profile decreased pressure recovery and increased distortion. Finally, increasing Reynolds number had almost no effect on inlet distortion but increased inlet recovery by about one-half percent at a Mach number near cruise.

Electrical conductivity of the plagioclase-NaCl-water system and its implication for the high conductivity anomalies in the mid-lower crust of Tibet Plateau

NASA Astrophysics Data System (ADS)

Li, Ping; Guo, Xinzhuan; Chen, Sibo; Wang, Chao; Yang, Junlong; Zhou, Xingfan

2018-02-01

In order to investigate the origin of the high conductivity anomalies geophysically observed in the mid-lower crust of Tibet Plateau, the electrical conductivity of plagioclase-NaCl-water system was measured at 1.2 GPa and 400-900 K. The relationship between electrical conductivity and temperature follows the Arrhenius law. The bulk conductivity increases with the fluid fraction and salinity, but is almost independent of temperature (activation enthalpy less than 0.1 eV). The conductivity of plagioclase-NaCl-water system is much lower than that of albite-NaCl-water system with similar fluid fraction and salinity, indicating a strong effect of the major mineral phase on the bulk conductivity of the brine-bearing system. The high conductivity anomalies of 10-1 and 100 S/m observed in the mid-lower crust of Tibet Plateau can be explained by the aqueous fluid with a volume fraction of 1 and 9%, respectively, if the fluid salinity is 25%. The anomaly value of 10-1 S/m can be explained by the aqueous fluid with a volume fraction of 6% if the salinity is 10%. In case of Southern Tibet where the heat flow is high, the model of a thin layer of brine-bearing aqueous fluid with a high salinity overlying a thick layer of partial melt is most likely to prevail.

Ni-BaTiO3-Based Base-Metal Electrode (BME) Ceramic Capacitors for Space Applications

NASA Technical Reports Server (NTRS)

Liu, Donhang; Fetter, Lula; Meinhold, Bruce

2015-01-01

A multi-layer ceramic capacitor (MLCC) is a high-temperature (1350C typical) co-fired ceramic monolithic that is composed of many layers of alternately stacked oxide-based dielectric and internal metal electrodes. To make the dielectric layers insulating and the metal electrode layers conducting, only highly oxidation-resistant precious metals, such as platinum, palladium, and silver, can be used for the co-firing of insulating MLCCs in a regular air atmosphere. MLCCs made with precious metals as internal electrodes and terminations are called precious-metal electrode (PME) capacitors. Currently, all military and space-level applications only address the use of PME capacitors.

Hierarchical self-assembly of hexagonal single-crystal nanosheets into 3D layered superlattices with high conductivity.

PubMed

Tao, Yulun; Shen, Yuhua; Yang, Liangbao; Han, Bin; Huang, Fangzhi; Li, Shikuo; Chu, Zhuwang; Xie, Anjian

2012-06-21

While the number of man-made nano superstructures realized by self-assembly is growing in recent years, assemblies of conductive polymer nanocrystals, especially for superlattices, are still a significant challenge, not only because of the simplicity of the shape of the nanocrystal building blocks and their interactions, but also because of the poor control over these parameters in the fabrication of more elaborate nanocrystals. Here, we firstly report a facile and general route to a new generation of 3D layered superlattices of polyaniline doped with CSA (PANI-CSA) and show how PANI crystallize and self-assemble, in a suitable single solution environment. In cyclohexane, 1D amorphous nanofibers transformed to 1D nanorods as building blocks, and then to 2D single-crystal nanosheets with a hexagonal phase, and lastly to 3D ordered layered superlattices with the narrowest polydispersity value (M(w)/M(n) = 1.47). Remarkably, all the instructions for the hierarchical self-assembly are encoded in the layered shape in other non-polar solvents (hexane, octane) and their conductivity in the π-π stacking direction is improved to about 50 S cm(-1), which is even higher than that of the highest previously reported value (16 S cm(-1)). The method used in this study is greatly expected to be readily scalable to produce superlattices of conductive polymers with high quality and low cost.

A High-Performing Sulfur-Tolerant and Redox-Stable Layered Perovskite Anode for Direct Hydrocarbon Solid Oxide Fuel Cells

PubMed Central

Ding, Hanping; Tao, Zetian; Liu, Shun; Zhang, Jiujun

2015-01-01

Development of alternative ceramic oxide anode materials is a key step for direct hydrocarbon solid oxide fuel cells (SOFCs). Several lanthanide based layered perovskite-structured oxides demonstrate outstanding oxygen diffusion rate, favorable electronic conductivity, and good oxygen surface exchange kinetics, owing to A-site ordered structure in which lanthanide and alkali-earth ions occupy alternate (001) layers and oxygen vacancies are mainly located in [LnOx] planes. Here we report a nickel-free cation deficient layered perovskite, (PrBa)0.95(Fe0.9Mo0.1)2O5 + δ (PBFM), for SOFC anode, and this anode shows an outstanding performance with high resistance against both carbon build-up and sulfur poisoning in hydrocarbon fuels. At 800 °C, the layered PBFM showed high electrical conductivity of 59.2 S cm−1 in 5% H2 and peak power densities of 1.72 and 0.54 W cm−2 using H2 and CH4 as fuel, respectively. The cell exhibits a very stable performance under a constant current load of 1.0 A cm−2. To our best knowledge, this is the highest performance of ceramic anodes operated in methane. In addition, the anode is structurally stable at various fuel and temperature conditions, suggesting that it is a feasible material candidate for high-performing SOFC anode. PMID:26648509

A High-Performing Sulfur-Tolerant and Redox-Stable Layered Perovskite Anode for Direct Hydrocarbon Solid Oxide Fuel Cells

NASA Astrophysics Data System (ADS)

Ding, Hanping; Tao, Zetian; Liu, Shun; Zhang, Jiujun

2015-12-01

Development of alternative ceramic oxide anode materials is a key step for direct hydrocarbon solid oxide fuel cells (SOFCs). Several lanthanide based layered perovskite-structured oxides demonstrate outstanding oxygen diffusion rate, favorable electronic conductivity, and good oxygen surface exchange kinetics, owing to A-site ordered structure in which lanthanide and alkali-earth ions occupy alternate (001) layers and oxygen vacancies are mainly located in [LnOx] planes. Here we report a nickel-free cation deficient layered perovskite, (PrBa)0.95(Fe0.9Mo0.1)2O5 + δ (PBFM), for SOFC anode, and this anode shows an outstanding performance with high resistance against both carbon build-up and sulfur poisoning in hydrocarbon fuels. At 800 °C, the layered PBFM showed high electrical conductivity of 59.2 S cm-1 in 5% H2 and peak power densities of 1.72 and 0.54 W cm-2 using H2 and CH4 as fuel, respectively. The cell exhibits a very stable performance under a constant current load of 1.0 A cm-2. To our best knowledge, this is the highest performance of ceramic anodes operated in methane. In addition, the anode is structurally stable at various fuel and temperature conditions, suggesting that it is a feasible material candidate for high-performing SOFC anode.

A High-Performing Sulfur-Tolerant and Redox-Stable Layered Perovskite Anode for Direct Hydrocarbon Solid Oxide Fuel Cells.

PubMed

Ding, Hanping; Tao, Zetian; Liu, Shun; Zhang, Jiujun

2015-12-09

Development of alternative ceramic oxide anode materials is a key step for direct hydrocarbon solid oxide fuel cells (SOFCs). Several lanthanide based layered perovskite-structured oxides demonstrate outstanding oxygen diffusion rate, favorable electronic conductivity, and good oxygen surface exchange kinetics, owing to A-site ordered structure in which lanthanide and alkali-earth ions occupy alternate (001) layers and oxygen vacancies are mainly located in [LnOx] planes. Here we report a nickel-free cation deficient layered perovskite, (PrBa)0.95(Fe0.9Mo0.1)2O5 + δ (PBFM), for SOFC anode, and this anode shows an outstanding performance with high resistance against both carbon build-up and sulfur poisoning in hydrocarbon fuels. At 800 °C, the layered PBFM showed high electrical conductivity of 59.2 S cm(-1) in 5% H2 and peak power densities of 1.72 and 0.54 W cm(-2) using H2 and CH4 as fuel, respectively. The cell exhibits a very stable performance under a constant current load of 1.0 A cm(-2). To our best knowledge, this is the highest performance of ceramic anodes operated in methane. In addition, the anode is structurally stable at various fuel and temperature conditions, suggesting that it is a feasible material candidate for high-performing SOFC anode.

Highly transparent and thermal-stable silver nanowire conductive film covered with ZnMgO by atomic-layer-deposition

NASA Astrophysics Data System (ADS)

Wang, Lei; Huang, Dongchen; Li, Min; Xu, Hua; Zou, Jianhua; Tao, Hong; Peng, Junbiao; Xu, Miao

2017-12-01

Solution-processed silver nanowires (AgNWs) have been considered as a promising material for next generation flexible transparent conductive electrodes. However AgNWs films have several intrinsic drawbacks, such as thermal stability and storage stability. Herein, we demonstrate a laminated ZnO/MgO (ZnMgO, ZMO) as a protective layer on the AgNWs films using atomic layer deposition (ALD). The fabricated films exhibited a low sheet resistance of 16 Ω/sq with high transmittance of 91% at 550 nm, an excellent thermal stability and bending property. The ZMO film grows perpendicularly on the surface of the AgNWs, making a perfect coverage of bulk silver nanowires and junction, which can effectively prompt the electrical transport behavior and enhance stability of the silver nanowires network.

Magneto-transport properties of a random distribution of few-layer graphene patches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iacovella, Fabrice; Mitioglu, Anatolie; Pierre, Mathieu

In this study, we address the electronic properties of conducting films constituted of an array of randomly distributed few layer graphene patches and investigate on their most salient galvanometric features in the moderate and extreme disordered limit. We demonstrate that, in annealed devices, the ambipolar behaviour and the onset of Landau level quantization in high magnetic field constitute robust hallmarks of few-layer graphene films. In the strong disorder limit, however, the magneto-transport properties are best described by a variable-range hopping behaviour. A large negative magneto-conductance is observed at the charge neutrality point, in consistency with localized transport regime.

High Reynolds Number Investigation of a Flush-Mounted, S-Duct Inlet With Large Amounts of Boundary Layer Ingestion

NASA Technical Reports Server (NTRS)

Berrier, Bobby L.; Carter, Melissa B.; Allan, Brian G.

2005-01-01

An experimental investigation of a flush-mounted, S-duct inlet with large amounts of boundary layer ingestion has been conducted at Reynolds numbers up to full scale. The study was conducted in the NASA Langley Research Center 0.3-Meter Transonic Cryogenic Tunnel. In addition, a supplemental computational study on one of the inlet configurations was conducted using the Navier-Stokes flow solver, OVERFLOW. Tests were conducted at Mach numbers from 0.25 to 0.83, Reynolds numbers (based on aerodynamic interface plane diameter) from 5.1 million to 13.9 million (full-scale value), and inlet mass-flow ratios from 0.29 to 1.22, depending on Mach number. Results of the study indicated that increasing Mach number, increasing boundary layer thickness (relative to inlet height) or ingesting a boundary layer with a distorted profile decreased inlet performance. At Mach numbers above 0.4, increasing inlet airflow increased inlet pressure recovery but also increased distortion. Finally, inlet distortion was found to be relatively insensitive to Reynolds number, but pressure recovery increased slightly with increasing Reynolds number.

Large Reduction of Hot Spot Temperature in Graphene Electronic Devices with Heat-Spreading Hexagonal Boron Nitride.

PubMed

Choi, David; Poudel, Nirakar; Park, Saungeun; Akinwande, Deji; Cronin, Stephen B; Watanabe, Kenji; Taniguchi, Takashi; Yao, Zhen; Shi, Li

2018-04-04

Scanning thermal microscopy measurements reveal a significant thermal benefit of including a high thermal conductivity hexagonal boron nitride (h-BN) heat-spreading layer between graphene and either a SiO 2 /Si substrate or a 100 μm thick Corning flexible Willow glass (WG) substrate. At the same power density, an 80 nm thick h-BN layer on the silicon substrate can yield a factor of 2.2 reduction of the hot spot temperature, whereas a 35 nm thick h-BN layer on the WG substrate is sufficient to obtain a factor of 4.1 reduction. The larger effect of the h-BN heat spreader on WG than on SiO 2 /Si is attributed to a smaller effective heat transfer coefficient per unit area for three-dimensional heat conduction into the thick, low-thermal conductivity WG substrate than for one-dimensional heat conduction through the thin oxide layer on silicon. Consequently, the h-BN lateral heat-spreading length is much larger on WG than on SiO 2 /Si, resulting in a larger degree of temperature reduction.

Studying the influence of substrate conductivity on the optoelectronic properties of quantum dots langmuir monolayer

NASA Astrophysics Data System (ADS)

Al-Alwani, Ammar J.; Chumakov, A. S.; Begletsova, N. N.; Shinkarenko, O. A.; Markin, A. V.; Gorbachev, I. A.; Bratashov, D. N.; Gavrikov, M. V.; Venig, S. B.; Glukhovskoy, E. G.

2018-04-01

The formation of CdSe quantum dots (QDs) monolayers was studied by Langmuir Blodgett method. The fluorescence (PL) spectra of QD monolayers were investigated at different substrate type (glass, silicon and ITO glass) and the influence of graphene sheets layer (as a conductive surface) on the QDs properties has also been studied. The optoelectronic properties of QDs can be tuned by deposition of insulating nano-size layers of the liquid crystal between QDs and conductive substrate. The monolayer of QDs transferred on conductive surface (glass with ITO) has lowest intensity of PL spectra due to quenching effect. The PL intensity of QDs could be tuned by using various type of substrates or/and by transformed high conductive layer. Also the photooxidation processes of CdSe QDs monolayer on the solid surface can be controlled by selection of suitable substrate. The current-voltage (I–V) characteristics of QDs thin film on ITO surface was studied using scanning tunneling microscope (STM).

Mechanism for atmosphere dependence of laser damage morphology in HfO2/SiO2 high reflective films

NASA Astrophysics Data System (ADS)

Pu, Yunti; Ma, Ping; Chen, Songlin; Zhu, Jiliang; Wang, Gang; Pan, Feng; Sun, Ping; Zhu, Xiaohong; Zhu, Jianguo; Xiao, Dingquan

2012-07-01

We show in this paper single-shot and multi-shot laser-induced damage thresholds (LIDTs) of HfO2/SiO2 high reflective films (the reflectance = 99.9%) are affected by the presence of a water layer absorbed on the surface of the porous films. When the water layer was removed with the process of pumping, the single-shot LIDT measured in vacuum dropped to ˜48% of that measured in air, while the multi-shot LIDT in vacuum dropped to ˜47% of its atmospheric value for the high reflective films. Typical damage micrographs of the films in air and in vacuum were obtained, showing distinct damage morphologies. Such atmosphere dependence of the laser damage morphology was found to originate from that formation of a water layer on the surface of porous films could cause an increase of horizontal thermal conductivity and a reduction of vertical thermal conductivity. Moreover, laser-induced periodic ripple damages in air were found in the SiO2 layer from the micrographs. A model of deformation kinematics was used to illustrate the occurrence of the periodic ripple damage, showing that it could be attributed to a contraction of the HfO2 layer under irradiation by the 5-ns laser pulses in air.

Dry writing of highly conductive electrodes on papers by using silver nanoparticle-graphene hybrid pencils.

PubMed

Park, Jun-Ho; Park, Myung-Joo; Lee, Jang-Sik

2017-01-05

The development of paper electronics would enable realization of extremely cheap devices for portable, disposable, and environmentally-benign electronics. Here, we propose a simple dry-writing tool similar to a pencil, which can be used to draw electrically conducting lines on paper for use in paper-based electronic devices. The fabricated pencil is composed of silver nanoparticles decorated on graphene layers to construct layered hybrid nanostructures. This pencil can draw highly conductive lines that are flexible and foldable on conventional papers. Electrodes drawn using this pencil on conventional copy paper are stable during repetitive mechanical folding and highly resistant to moisture/chemicals. This pencil can draw a conductive line where its resistance can be tuned by changing the amount of nanoparticles. A nonvolatile memory device is realized on papers by hand written lines with different resistance. All memory elements are composed of carbons on papers, so complete data security can be achieved by burning the memory papers. This work will provide a new opportunity to fabricate electronic devices on real papers with good conductivity as well as robust mechanical/chemical stability.

Self-powered, ultra-sensitive, flexible tactile sensors based on contact electrification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zhong Lin; Zhu, Guang

A tactile sensor for sensing touch from a human finger includes a triboelectric layer and includes a material that becomes electrically charged after being in contact with the finger. The first side of a first conductive layer is in contact with the second side of triboelectric layer. The first side of a dielectric layer is in contact with the first conductive layer and the second side of the dielectric layer is in contact with a second conductive layer. When the triboelectric layer becomes electrically charged after being in contact with the finger, the first conductive layer and the second conductivemore » layer are subjected to an electric field, which has a first field strength at the first conductive layer and a second field strength, different from the first field strength, at the second conductive layer. A plurality of tactile sensors can be arranged as a keyboard.« less

Characterization of Polyethylene-Graft-Sulfonated Polyarylsulfone Proton Exchange Membranes for Direct Methanol Fuel Cell Applications.

PubMed

Kim, Hyung Kyu; Zhang, Gang; Nam, Changwoo; Chung, T C Mike

2015-12-04

This paper examines polymer film morphology and several important properties of polyethylene-graft-sulfonated polyarylene ether sulfone (PE-g-s-PAES) proton exchange membranes (PEMs) for direct methanol fuel cell applications. Due to the extreme surface energy differences between a semi-crystalline and hydrophobic PE backbone and several amorphous and hydrophilic s-PAES side chains, the PE-g-s-PAES membrane self-assembles into a unique morphology, with many proton conductive s-PAES channels embedded in the stable and tough PE matrix and a thin hydrophobic PE layer spontaneously formed on the membrane surfaces. In the bulk, these membranes show good mechanical properties (tensile strength >30 MPa, Young's modulus >1400 MPa) and low water swelling (λ < 15) even with high IEC >3 mmol/g in the s-PAES domains. On the surface, the thin hydrophobic and semi-crystalline PE layer shows some unusual barrier (protective) properties. In addition to exhibiting higher through-plane conductivity (up to 160 mS/cm) than in-plane conductivity, the PE surface layer minimizes methanol cross-over from anode to cathode with reduced fuel loss, and stops the HO• and HO₂• radicals, originally formed at the anode, entering into PEM matrix. Evidently, the thin PE surface layer provides a highly desirable protecting layer for PEMs to reduce fuel loss and increase chemical stability. Overall, the newly developed PE-g-s-PAES membranes offer a desirable set of PEM properties, including conductivity, selectivity, mechanical strength, stability, and cost-effectiveness for direct methanol fuel cell applications.

Characterization of Polyethylene-Graft-Sulfonated Polyarylsulfone Proton Exchange Membranes for Direct Methanol Fuel Cell Applications

PubMed Central

Kim, Hyung Kyu; Zhang, Gang; Nam, Changwoo; Chung, T.C. Mike

2015-01-01

This paper examines polymer film morphology and several important properties of polyethylene-graft-sulfonated polyarylene ether sulfone (PE-g-s-PAES) proton exchange membranes (PEMs) for direct methanol fuel cell applications. Due to the extreme surface energy differences between a semi-crystalline and hydrophobic PE backbone and several amorphous and hydrophilic s-PAES side chains, the PE-g-s-PAES membrane self-assembles into a unique morphology, with many proton conductive s-PAES channels embedded in the stable and tough PE matrix and a thin hydrophobic PE layer spontaneously formed on the membrane surfaces. In the bulk, these membranes show good mechanical properties (tensile strength >30 MPa, Young’s modulus >1400 MPa) and low water swelling (λ < 15) even with high IEC >3 mmol/g in the s-PAES domains. On the surface, the thin hydrophobic and semi-crystalline PE layer shows some unusual barrier (protective) properties. In addition to exhibiting higher through-plane conductivity (up to 160 mS/cm) than in-plane conductivity, the PE surface layer minimizes methanol cross-over from anode to cathode with reduced fuel loss, and stops the HO• and HO2• radicals, originally formed at the anode, entering into PEM matrix. Evidently, the thin PE surface layer provides a highly desirable protecting layer for PEMs to reduce fuel loss and increase chemical stability. Overall, the newly developed PE-g-s-PAES membranes offer a desirable set of PEM properties, including conductivity, selectivity, mechanical strength, stability, and cost-effectiveness for direct methanol fuel cell applications. PMID:26690232

Metallic few-layered VS2 ultrathin nanosheets: high two-dimensional conductivity for in-plane supercapacitors.

PubMed

Feng, Jun; Sun, Xu; Wu, Changzheng; Peng, Lele; Lin, Chenwen; Hu, Shuanglin; Yang, Jinlong; Xie, Yi

2011-11-09

With the rapid development of portable electronics, such as e-paper and other flexible devices, practical power sources with ultrathin geometries become an important prerequisite, in which supercapacitors with in-plane configurations are recently emerging as a favorable and competitive candidate. As is known, electrode materials with two-dimensional (2D) permeable channels, high-conductivity structural scaffolds, and high specific surface areas are the indispensible requirements for the development of in-plane supercapacitors with superior performance, while it is difficult for the presently available inorganic materials to make the best in all aspects. In this sense, vanadium disulfide (VS(2)) presents an ideal material platform due to its synergic properties of metallic nature and exfoliative characteristic brought by the conducting S-V-S layers stacked up by weak van der Waals interlayer interactions, offering great potential as high-performance in-plane supercapacitor electrodes. Herein, we developed a unique ammonia-assisted strategy to exfoliate bulk VS(2) flakes into ultrathin VS(2) nanosheets stacked with less than five S-V-S single layers, representing a brand new two-dimensional material having metallic behavior aside from graphene. Moreover, highly conductive VS(2) thin films were successfully assembled for constructing the electrodes of in-plane supercapacitors. As is expected, a specific capacitance of 4760 μF/cm(2) was realized here in a 150 nm in-plane configuration, of which no obvious degradation was observed even after 1000 charge/discharge cycles, offering as a new in-plane supercapacitor with high performance based on quasi-two-dimensional materials.

Conductors and semiconductors for advanced organic electronics

NASA Astrophysics Data System (ADS)

Meyer-Friedrichsen, Timo; Elschner, Andreas; Keohan, Frank; Lövenich, Wilfried; Ponomarenko, Sergei A.

2009-08-01

The development of suitable materials for organic electronics is still one of the key points to access new application areas with this promising technology. Semiconductors based on thiophene chemistry show very high charge carrier mobilities. The functionalization with linker groups provided materials that built monomolecular layers of the semiconductors on the hydrolyzed oxide surface of a silicon-wafer. This approach lead to self-assembled mono-layer field-effect transistors (SAM-FETs) with mobilities of up to 0.04 cm2/Vs, which is comparable to the values of the respective bulk thin film. Transparent inorganic conductors like ITO are highly conductive but the costly processing and the brittleness hamper their use in cost-sensitive and/or flexible devices. Highly conductive PEDOT-grades have been developed with conductivities of up to 1000 S/cm which are easily applicable by printing techniques and can be used as ITO replacement in devices such as touch panels or organic photovoltaics.

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures.

PubMed

Chen, Ruei-San; Tang, Chih-Che; Shen, Wei-Chu; Huang, Ying-Sheng

2015-12-05

Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor performance, which suggest a new direction for the development of next-generation ultrathin and flexible photonic and electronic devices. Enhanced luminescence quantum efficiency has been widely observed in these atomically thin 2D crystals. However, dimension effects beyond quantum confinement thicknesses or even at the micrometer scale are not expected and have rarely been observed. In this study, molybdenum diselenide (MoSe2) layer crystals with a thickness range of 6-2,700 nm were fabricated as two- or four-terminal devices. Ohmic contact formation was successfully achieved by the focused-ion beam (FIB) deposition method using platinum (Pt) as a contact metal. Layer crystals with various thicknesses were prepared through simple mechanical exfoliation by using dicing tape. Current-voltage curve measurements were performed to determine the conductivity value of the layer nanocrystals. In addition, high-resolution transmission electron microscopy, selected-area electron diffractometry, and energy-dispersive X-ray spectroscopy were used to characterize the interface of the metal-semiconductor contact of the FIB-fabricated MoSe2 devices. After applying the approaches, the substantial thickness-dependent electrical conductivity in a wide thickness range for the MoSe2-layer semiconductor was observed. The conductivity increased by over two orders of magnitude from 4.6 to 1,500 Ω(-) (1) cm(-) (1), with a decrease in the thickness from 2,700 to 6 nm. In addition, the temperature-dependent conductivity indicated that the thin MoSe2 multilayers exhibited considerably weak semiconducting behavior with activation energies of 3.5-8.5 meV, which are considerably smaller than those (36-38 meV) of the bulk. Probable surface-dominant transport properties and the presence of a high surface electron concentration in MoSe2 are proposed. Similar results can be obtained for other layer semiconductor materials such as MoS2 and WS2.

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

PubMed Central

Chen, Ruei-San; Tang, Chih-Che; Shen, Wei-Chu; Huang, Ying-Sheng

2015-01-01

Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor performance, which suggest a new direction for the development of next-generation ultrathin and flexible photonic and electronic devices. Enhanced luminescence quantum efficiency has been widely observed in these atomically thin 2D crystals. However, dimension effects beyond quantum confinement thicknesses or even at the micrometer scale are not expected and have rarely been observed. In this study, molybdenum diselenide (MoSe2) layer crystals with a thickness range of 6-2,700 nm were fabricated as two- or four-terminal devices. Ohmic contact formation was successfully achieved by the focused-ion beam (FIB) deposition method using platinum (Pt) as a contact metal. Layer crystals with various thicknesses were prepared through simple mechanical exfoliation by using dicing tape. Current-voltage curve measurements were performed to determine the conductivity value of the layer nanocrystals. In addition, high-resolution transmission electron microscopy, selected-area electron diffractometry, and energy-dispersive X-ray spectroscopy were used to characterize the interface of the metal–semiconductor contact of the FIB-fabricated MoSe2 devices. After applying the approaches, the substantial thickness-dependent electrical conductivity in a wide thickness range for the MoSe2-layer semiconductor was observed. The conductivity increased by over two orders of magnitude from 4.6 to 1,500 Ω−1 cm−1, with a decrease in the thickness from 2,700 to 6 nm. In addition, the temperature-dependent conductivity indicated that the thin MoSe2 multilayers exhibited considerably weak semiconducting behavior with activation energies of 3.5-8.5 meV, which are considerably smaller than those (36-38 meV) of the bulk. Probable surface-dominant transport properties and the presence of a high surface electron concentration in MoSe2 are proposed. Similar results can be obtained for other layer semiconductor materials such as MoS2 and WS2. PMID:26710105

Transient analysis for alternating over-current characteristics of HTSC power transmission cable

NASA Astrophysics Data System (ADS)

Lim, S. H.; Hwang, S. D.

2006-10-01

In this paper, the transient analysis for the alternating over-current distribution in case that the over-current was applied for a high-TC superconducting (HTSC) power transmission cable was performed. The transient analysis for the alternating over-current characteristics of HTSC power transmission cable with multi-layer is required to estimate the redistribution of the over-current between its conducting layers and to protect the cable system from the over-current in case that the quench in one or two layers of the HTSC power cable happens. For its transient analysis, the resistance generation of the conducting layers for the alternating over-current was reflected on its equivalent circuit, based on the resistance equation obtained by applying discrete Fourier transform (DFT) for the voltage and the current waveforms of the HTSC tape, which comprises each layer of the HTSC power transmission cable. It was confirmed through the numerical analysis on its equivalent circuit that after the current redistribution from the outermost layer into the inner layers first happened, the fast current redistribution between the inner layers developed as the amplitude of the alternating over-current increased.

Nonlinear conductivity in silicon nitride

NASA Astrophysics Data System (ADS)

Tuncer, Enis

2017-08-01

To better comprehend electrical silicon-package interaction in high voltage applications requires full characterization of the electrical properties of dielectric materials employed in wafer and package level design. Not only the packaging but wafer level dielectrics, i.e. passivation layers, would experience high electric fields generated by the voltage applied pads. In addition the interface between the passivation layer and a mold compound might develop space charge because of the mismatch in electrical properties of the materials. In this contribution electrical properties of a thin silicon nitride (Si3N4) dielectric is reported as a function of temperature and electric field. The measured values later analyzed using different temperature dependent exponential expressions and found that the Mott variable range hopping conduction model was successful to express the data. A full temperature/electric field dependency of conductivity is generated. It was found that the conduction in Si3N4 could be expressed like a field ionization or Fowler-Nordheim mechanism.

Durable high strength cement concrete topping for asphalt roads

NASA Astrophysics Data System (ADS)

Vyrozhemskyi, Valerii; Krayushkina, Kateryna; Bidnenko, Nataliia

2017-09-01

Work on improving riding qualities of pavements by means of placing a thin cement layer with high roughness and strength properties on the existing asphalt pavement were conducted in Ukraine for the first time. Such pavement is called HPCM (High Performance Cementitious Material). This is a high-strength thin cement-layer pavement of 8-9 mm thickness reinforced with metal or polymer fiber of less than 5 mm length. Increased grip properties are caused by placement of stone material of 3-5 mm fraction on the concrete surface. As a result of the research, the preparation and placement technology of high-strength cement thin-layer pavement reinforced with fiber was developed to improve friction properties of existing asphalt pavements which ensures their roughness and durability. It must be emphasized that HPCM is a fundamentally new type of thin-layer pavement in which a rigid layer of 10 mm thickness is placed on a non-rigid base thereby improving riding qualities of asphalt pavement at any season of a year.

A study of electrically active traps in AlGaN/GaN high electron mobility transistor

NASA Astrophysics Data System (ADS)

Yang, Jie; Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

2013-10-01

We have studied electron conduction mechanisms and the associated roles of the electrically active traps in the AlGaN layer of an AlGaN/GaN high electron mobility transistor structure. By fitting the temperature dependent I-V (Current-Voltage) curves to the Frenkel-Poole theory, we have identified two discrete trap energy levels. Multiple traces of I-V measurements and constant-current injection experiment all confirm that the main role of the traps in the AlGaN layer is to enhance the current flowing through the AlGaN barrier by trap-assisted electron conduction without causing electron trapping.

Flexible Carbon Nanotube Films for High Performance Strain Sensors

PubMed Central

Kanoun, Olfa; Müller, Christian; Benchirouf, Abderahmane; Sanli, Abdulkadir; Dinh, Trong Nghia; Al-Hamry, Ammar; Bu, Lei; Gerlach, Carina; Bouhamed, Ayda

2014-01-01

Compared with traditional conductive fillers, carbon nanotubes (CNTs) have unique advantages, i.e., excellent mechanical properties, high electrical conductivity and thermal stability. Nanocomposites as piezoresistive films provide an interesting approach for the realization of large area strain sensors with high sensitivity and low manufacturing costs. A polymer-based nanocomposite with carbon nanomaterials as conductive filler can be deposited on a flexible substrate of choice and this leads to mechanically flexible layers. Such sensors allow the strain measurement for both integral measurement on a certain surface and local measurement at a certain position depending on the sensor geometry. Strain sensors based on carbon nanostructures can overcome several limitations of conventional strain sensors, e.g., sensitivity, adjustable measurement range and integral measurement on big surfaces. The novel technology allows realizing strain sensors which can be easily integrated even as buried layers in material systems. In this review paper, we discuss the dependence of strain sensitivity on different experimental parameters such as composition of the carbon nanomaterial/polymer layer, type of polymer, fabrication process and processing parameters. The insights about the relationship between film parameters and electromechanical properties can be used to improve the design and fabrication of CNT strain sensors. PMID:24915183

Highly conductive metal interconnects on three-dimensional objects fabricated with omnidirectional ink jet printing technology

NASA Astrophysics Data System (ADS)

Yoshida, Yasunori; Wada, Hikaru; Izumi, Konami; Tokito, Shizuo

2017-05-01

In this work, we demonstrate that highly conductive metal interconnects can be fabricated on the surface of three-dimensional objects using “omnidirectional ink jet” (OIJ) printing technology. OIJ printing technology makes it possible to perform ink jet printing in all directions by combining the motion of a 6-axis vertically articulated robot with precise positioning and a thermal drying process, which allows for the printing of stacked layers. By using OIJ technology, we were the first to successfully fabricate printed interconnect layers having a very low electrical resistance of 12 mΩ over a 10 mm length. Moreover, the results of the high-current test demonstrated that the printed interconnects can withstand high-current-flow of 5 A for 30 min or more.

Carbon materials for enhancing charge transport in the advancements of perovskite solar cells

NASA Astrophysics Data System (ADS)

Hu, Ruiyuan; Chu, Liang; Zhang, Jian; Li, Xing'ao; Huang, Wei

2017-09-01

Organic-inorganic halide perovskite solar cells (PSCs) have become a new favorite in the photovoltaic field, due to the boosted efficiency up to 22.1%. Despite a flow of achievements, there are certain challenges to simultaneously meet high efficiency, large scale, low cost and high stability. Due to the low cost, extensive sources, high electrical conductivity and chemical stability, carbon materials have made undeniable contributions to play positive roles in developing PSCs. Carbon materials not only have the favorable conductivity but also bipolar advantage, which can transfer both electrons and holes. In this review, we will discuss how the carbon materials transfer charge or accelerate charge transport by incorporation in PSCs. Carbon materials can replace transparent conductive oxide layers, and enhance electron transport in electron transport layers. Moreover, carbon materials with continuous structure, especially carbon nanotubes and graphene, can provide direct charge transport channel that make them suitable additives or even substitutes in hole transport layers. Especially, the successful application of carbon materials as counter electrodes makes the devices full-printable, low temperature and high stability. Finally, a brief outlook is provided on the future development of carbon materials for PSCs, which are expected to devote more contributions in the future photovoltaic market.

Power module assembly

DOEpatents

Campbell, Jeremy B [Torrance, CA; Newson, Steve [Redondo Beach, CA

2011-11-15

A power module assembly of the type suitable for deployment in a vehicular power inverter, wherein the power inverter has a grounded chassis, is provided. The power module assembly comprises a conductive base layer electrically coupled to the chassis, an insulating layer disposed on the conductive base layer, a first conductive node disposed on the insulating layer, a second conductive node disposed on the insulating layer, wherein the first and second conductive nodes are electrically isolated from each other. The power module assembly also comprises a first capacitor having a first electrode electrically connected to the conductive base layer, and a second electrode electrically connected to the first conductive node, and further comprises a second capacitor having a first electrode electrically connected to the conductive base layer, and a second electrode electrically connected to the second conductive node.

Effect of interface layer on the performance of high power diode laser arrays

NASA Astrophysics Data System (ADS)

Zhang, Pu; Wang, Jingwei; Xiong, Lingling; Li, Xiaoning; Hou, Dong; Liu, Xingsheng

2015-02-01

Packaging is an important part of high power diode laser (HPLD) development and has become one of the key factors affecting the performance of high power diode lasers. In the package structure of HPLD, the interface layer of die bonding has significant effects on the thermal behavior of high power diode laser packages and most degradations and failures in high power diode laser packages are directly related to the interface layer. In this work, the effects of interface layer on the performance of high power diode laser array were studied numerically by modeling and experimentally. Firstly, numerical simulations using finite element method (FEM) were conducted to analyze the effects of voids in the interface layer on the temperature rise in active region of diode laser array. The correlation between junction temperature rise and voids was analyzed. According to the numerical simulation results, it was found that the local temperature rise of active region originated from the voids in the solder layer will lead to wavelength shift of some emitters. Secondly, the effects of solder interface layer on the spectrum properties of high power diode laser array were studied. It showed that the spectrum shape of diode laser array appeared "right shoulder" or "multi-peaks", which were related to the voids in the solder interface layer. Finally, "void-free" techniques were developed to minimize the voids in the solder interface layer and achieve high power diode lasers with better optical-electrical performances.

Electromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperatures

NASA Astrophysics Data System (ADS)

Li, Sigong; Tan, Yongqiang; Xue, Jiaxiang; Liu, Tong; Zhou, Xiaosong; Zhang, Haibin

2018-01-01

The X-band electromagnetic interference (EMI) shielding properties of nano-layered Ti3SiC2 ceramics were evaluated from room temperature up to 800°C in order to explore the feasibility of Ti3SiC2 as efficient high temperature EMI shielding material. It was found that Ti3SiC2 exhibits satisfactory EMI shielding effectiveness (SE) close to 30 dB at room temperature and the EMI SE shows good temperature stability. The remarkable EMI shielding properties of Ti3SiC2 can be mainly attributed to high electrical conductivity, high dielectric loss and more importantly the multiple reflections due to the layered structure.

Organimetallic Fluorescent Complex Polymers For Light Emitting Applications

DOEpatents

Shi, Song Q.; So, Franky

1997-10-28

A fluorescent complex polymer with fluorescent organometallic complexes connected by organic chain spacers is utilized in the fabrication of light emitting devices on a substantially transparent planar substrate by depositing a first conductive layer having p-type conductivity on the planar surface of the substrate, depositing a layer of a hole transporting and electron blocking material on the first conductive layer, depositing a layer of the fluorescent complex polymer on the layer of hole transporting and electron blocking material as an electron transporting emissive layer and depositing a second conductive layer having n-type conductivity on the layer of fluorescent complex polymer.

Method for fabricating solar cells having integrated collector grids

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr. (Inventor)

1979-01-01

A heterojunction or Schottky barrier photovoltaic device comprising a conductive base metal layer compatible with and coating predominately the exposed surface of the p-type substrate of the device such that a back surface field region is formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal oxide layer in integral contact with the n-type layer of the heterojunction or Schottky barrier device having a metal alloy grid network of the same metal elements of the oxide constituents of the mixed metal oxide layer embedded in the mixed metal oxide layer, an insulating layer which prevents electrical contact between the conductive metal base layer and the transparent, conductive metal oxide layer, and a metal contact means covering the insulating layer and in intimate contact with the metal grid network embedded in the transparent, conductive oxide layer for conducting electrons generated by the photovoltaic process from the device.

Electrochemical properties for high surface area and improved electrical conductivity of platinum-embedded porous carbon nanofibers

NASA Astrophysics Data System (ADS)

An, Geon-Hyoung; Ahn, Hyo-Jin; Hong, Woong-Ki

2015-01-01

Four different types of carbon nanofibers (CNFs) for electrical double-layer capacitors (EDLCs), porous and non-porous CNFs with and without Pt metal nanoparticles, are synthesized by an electrospinning method and their performance in electrical double-layer capacitors (EDLCs) is characterized. In particular, the Pt-embedded porous CNFs (PCNFs) exhibit a high specific surface area of 670 m2 g-1, a large mesopore volume of 55.7%, and a low electrical resistance of 1.7 × 103. The synergistic effects of the high specific surface area with a large mesopore volume, and superior electrical conductivity result in an excellent specific capacitance of 130.2 F g-1, a good high-rate performance, superior cycling durability, and high energy density of 16.9-15.4 W h kg-1 for the performance of EDLCs.

High density associative memory

NASA Technical Reports Server (NTRS)

Moopenn, Alexander W. (Inventor); Thakoor, Anilkumar P. (Inventor); Daud, Taher (Inventor); Lambe, John J. (Inventor)

1989-01-01

A multi-layered, thin-film, digital memory having associative recall. There is a first memory matrix and a second memory matrix. Each memory matrix comprises, a first layer comprising a plurality of electrically separated row conductors; a second layer comprising a plurality of electrically separated column conductors intersecting but electrically separated from the row conductors; and, a plurality of resistance elements electrically connected between the row condutors and the column conductors at respective intersections of the row conductors and the column conductors, each resistance element comprising, in series, a first resistor of sufficiently high ohmage to conduct a sensible element current therethrough with virtually no heat-generating power consumption when a low voltage as employed in thin-film applications is applied thereacross and a second resistor of sufficiently high ohmage to conduct no sensible current therethrough when a low voltage as employed in thin-film applications is applied thereacross, the second resistor having the quality of breaking down to create a short therethrough upon the application of a breakdown level voltage across the first and second resistors.

Thermal conductivity of a graphite bipolar plate (BPP) and its thermal contact resistance with fuel cell gas diffusion layers: Effect of compression, PTFE, micro porous layer (MPL), BPP out-of-flatness and cyclic load

NASA Astrophysics Data System (ADS)

Sadeghifar, Hamidreza; Djilali, Ned; Bahrami, Majid

2015-01-01

This paper reports on measurements of thermal conductivity of a graphite bipolar plate (BPP) as a function of temperature and its thermal contact resistance (TCR) with treated and untreated gas diffusion layers (GDLs). The thermal conductivity of the BPP decreases with temperature and its thermal contact resistance with GDLs, which has been overlooked in the literature, is found to be dominant over a relatively wide range of compression. The effects of PTFE loading, micro porous layer (MPL), compression, and BPP out-of-flatness are also investigated experimentally. It is found that high PTFE loadings, MPL and even small BPP out-of-flatness increase the BPP-GDL thermal contact resistance dramatically. The paper also presents the effect of cyclic load on the total resistance of a GDL-BPP assembly, which sheds light on the behavior of these materials under operating conditions in polymer electrolyte membrane fuel cells.

Structure and functionality of bromine doped graphite.

PubMed

Hamdan, Rashid; Kemper, A F; Cao, Chao; Cheng, H P

2013-04-28

First-principles calculations are used to study the enhanced in-plane conductivity observed experimentally in Br-doped graphite, and to study the effect of external stress on the structure and functionality of such systems. The model used in the numerical calculations is that of stage two doped graphite. The band structure near the Fermi surface of the doped systems with different bromine concentrations is compared to that of pure graphite, and the charge transfer between carbon and bromine atoms is analyzed to understand the conductivity change along different high symmetry directions. Our calculations show that, for large interlayer separation between doped graphite layers, bromine is stable in the molecular form (Br2). However, with increased compression (decreased layer-layer separation) Br2 molecules tend to dissociate. While in both forms, bromine is an electron acceptor. The charge exchange between the graphite layers and Br atoms is higher than that with Br2 molecules. Electron transfer to the Br atoms increases the number of hole carriers in the graphite sheets, resulting in an increase of conductivity.

Development of a Solar Cell Back Sheet with Excellent UV Durability and Thermal Conductivity.

PubMed

Kang, Seong-Hwan; Choi, Jaeho; Lee, Sung-Ho; Song, Young-Hoon; Park, Jong-Se; Jung, In-Sung; Jung, Jin-Su; Kim, Chong-Yeal; Yang, O-Bong

2018-09-01

The back sheet is one of the most important materials in photovoltaic (PV) modules. It plays an important role in protecting the solar cell from the environment by preventing moisture penetration. In the back sheet, the outermost layer is composed of a polyester (PET) film to protect the PV module from moisture, and the opposite layer is composed of a TiO2 + PE material. Nowadays, PV modules are installed in the desert. Therefore, methods to improve the power generation efficiency of PV modules need to be investigated as the efficiency is affected by temperature resulting from the heat radiation effect. Using a back sheet with a high thermal conductivity, the module output efficiency can be increased as heat is efficiently dissipated. In this study, a thermally conductive film was fabricated by mixing a reference film (TiO2 + PE) and a non-metallic material, MgO, with high thermal conductivity. UV irradiation tests of the film were conducted. The thermally conductive film (TiO2 + PE + MgO) showed higher conductivity than a reference film. No visible cracks and low yellowing degree were found in thermally conductive film, confirming its excellent UV durability characteristics. The sample film was bonded to a PET layer, and a back sheet was fabricated. The yellowing of the back sheet was also analyzed after UV irradiation. In addition, mini modules with four solar cell were fabricated using the developed back sheet, and a comparative outdoor test was conducted. The results showed that power generation improved by 1.38%.

Mix design of asphalt mixture used for the waterproof and anti-cracking layer in the rainy area of South China.

PubMed

Liu, Fuming; Dong, Aixia; Liu, Chaoqun; Wu, Wenqing

2018-01-01

In this study, the asphalt mixture (porosity <2%) was tested for use between the upper and middle layers of the asphalt pavement to improve its interlayer structure and to enhance its related waterproof and anti-cracking ability. Considering the weather characteristics and traffic conditions in Jiangxi Province, appropriate raw materials were selected. Based on the technical indexes of the raw materials, expected porosity (<2%), and AC-5 standard for the asphalt mixture, experiments were conducted to determine the best gradation range of the waterproof and anti-cracking layer, and to obtain the optimum amount of the asphalt and fiber used based on Marshall tests. The high-temperature rutting test, low-temperature cracking test, and water stability test were conducted to evaluate the pavement performance of the waterproof and anti-cracking layer. A waterproof and anti-cracking layer was added between the upper and middle layers of the asphalt pavement, which has excellent performance for avoiding cracks and water damage.

High Reynolds Number Investigation of a Flush Mounted, S-Duct Inlet With Large Amounts of Boundary Layer Ingestion

NASA Technical Reports Server (NTRS)

Berrier, Bobby L.; Carter, Melissa B.; Allan, Brian G.

2005-01-01

An experimental investigation of a flush-mounted, S-duct inlet with large amounts of boundary layer ingestion has been conducted at Reynolds numbers up to full scale. The study was conducted in the NASA Langley Research Center 0.3-Meter Transonic Cryogenic Tunnel. In addition, a supplemental computational study on one of the inlet configurations was conducted using the Navier-Stokes flow solver, OVERFLOW. Tests were conducted at Mach numbers from 0.25 to 0.83, Reynolds numbers (based on aerodynamic interface plane diameter) from 5.1 million to 13.9 million (full-scale value), and inlet mass-flow ratios from 0.29 to 1.22, depending on Mach number. Results of the study indicated that increasing Mach number, increasing boundary layer thickness (relative to inlet height) or ingesting a boundary layer with a distorted profile decreased inlet performance. At Mach numbers above 0.4, increasing inlet airflow increased inlet pressure recovery but also increased distortion. Finally, inlet distortion was found to be relatively insensitive to Reynolds number, but pressure recovery increased slightly with increasing Reynolds number.This CD-ROM supplement contains inlet data including: Boundary layer data, Duct static pressure data, performance-AIP (fan face) data, Photos, Tunnel wall P-PTO data and definitions.

Polymeric hydrogen diffusion barrier, high-pressure storage tank so equipped, method of fabricating a storage tank and method of preventing hydrogen diffusion

DOEpatents

Lessing, Paul A [Idaho Falls, ID

2008-07-22

An electrochemically active hydrogen diffusion barrier which comprises an anode layer, a cathode layer, and an intermediate electrolyte layer, which is conductive to protons and substantially impermeable to hydrogen. A catalytic metal present in or adjacent to the anode layer catalyzes an electrochemical reaction that converts any hydrogen that diffuses through the electrolyte layer to protons and electrons. The protons and electrons are transported to the cathode layer and reacted to form hydrogen. The hydrogen diffusion barrier is applied to a polymeric substrate used in a storage tank to store hydrogen under high pressure. A storage tank equipped with the electrochemically active hydrogen diffusion barrier, a method of fabricating the storage tank, and a method of preventing hydrogen from diffusing out of a storage tank are also disclosed.

Polymeric hydrogen diffusion barrier, high-pressure storage tank so equipped, method of fabricating a storage tank and method of preventing hydrogen diffusion

DOEpatents

Lessing, Paul A.

2004-09-07

An electrochemically active hydrogen diffusion barrier which comprises an anode layer, a cathode layer, and an intermediate electrolyte layer, which is conductive to protons and substantially impermeable to hydrogen. A catalytic metal present in or adjacent to the anode layer catalyzes an electrochemical reaction that converts any hydrogen that diffuses through the electrolyte layer to protons and electrons. The protons and electrons are transported to the cathode layer and reacted to form hydrogen. The hydrogen diffusion barrier is applied to a polymeric substrate used in a storage tank to store hydrogen under high pressure. A storage tank equipped with the electrochemically active hydrogen diffusion barrier, a method of fabricating the storage tank, and a method of preventing hydrogen from diffusing out of a storage tank are also disclosed.

Architecture for high critical current superconducting tapes

DOEpatents

Jia, Quanxi; Foltyn, Stephen R.

2002-01-01

Improvements in critical current capacity for superconducting film structures are disclosed and include the use of, e.g., multilayer YBCO structures where individual YBCO layers are separated by a layer of an insulating material such as CeO.sub.2 and the like, a layer of a conducting material such as strontium ruthenium oxide and the like or by a second superconducting material such as SmBCO and the like.

Coaxial-cable structure composite cathode material with high sulfur loading for high performance lithium-sulfur batteries

NASA Astrophysics Data System (ADS)

Li, Qiang; Zhang, Zhian; Guo, Zaiping; Zhang, Kai; Lai, Yanqing; Li, Jie

2015-01-01

Hollow carbon nanofiber@nitrogen-doped porous carbon (HCNF@NPC) coaxial-cable structure composite, which is carbonized from HCNF@polydopamine, is prepared as an improved high conductive carbon matrix for encapsulating sulfur as a composite cathode material for lithium-sulfur batteries. The prepared HCNF@NPC-S composite with high sulfur content of approximately 80 wt% shows an obvious coaxial-cable structure with an NPC layer coating on the surface of the linear HCNFs along the length and sulfur homogeneously distributes in the coating layer. This material exhibits much better electrochemical performance than the HCNF-S composite, delivers initial discharge capacity of 982 mAh g-1 and maintains a high capacity retention rate of 63% after 200 cycles at a high current density of 837.5 mA g-1. The significantly enhanced electrochemical performance of the HCNF@NPC-S composite is attributed to the unique coaxial-cable structure, in which the linear HCNF core provides electronic conduction pathways and works as mechanical support, and the NPC shell with nitrogen-doped and porous structure can trap sulfur/polysulfides and provide Li+ conductive pathways.

A model to predict thermal conductivity of irradiated U–Mo dispersion fuel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burkes, Douglas E.; Huber, Tanja K.; Casella, Andrew M.

The Office of Materials Management and Minimization Reactor Conversion Program continues to develop existing and new research and test reactor fuels to achieve maximum attainable uranium loadings to support the conversion of a number of the world’s remaining high-enriched uranium fueled reactors to low-enriched uranium fuel. The program is focused on assisting with the development and qualification of a fuel design that consists of a uranium-molybdenum (U-Mo) alloy dispersed in an aluminum matrix as one option for reactor conversion. Thermal conductivity is an important consideration in determining the operational temperature of the fuel and can be influenced by interaction layermore » formation between the dispersed phase and matrix and upon the concentration of the dispersed phase within the matrix. This paper extends the use of a simple model developed previously to study the influence of interaction layer formation as well as the size and volume fraction of fuel particles dispersed in the matrix, Si additions to the matrix, and Mo concentration in the fuel particles on the effective thermal conductivity of the U-Mo/Al composite during irradiation. The model has been compared to experimental measurements recently conducted on U-Mo/Al dispersion fuels at two different fission densities with acceptable agreement. Observations of the modeled results indicate that formation of an interaction layer and subsequent consumption of the matrix reveals a rather significant effect on effective thermal conductivity. The modeled interaction layer formation and subsequent consumption of the high thermal conductivity matrix was sensitive to the average dispersed fuel particle size, suggesting this parameter as one of the most effective in minimizing thermal conductivity degradation of the composite, while the influence of Si additions to the matrix in the model was highly dependent upon irradiation conditions.« less

Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit.

PubMed

Zhang, Yuhan; Qiao, Jingsi; Gao, Si; Hu, Fengrui; He, Daowei; Wu, Bing; Yang, Ziyi; Xu, Bingchen; Li, Yun; Shi, Yi; Ji, Wei; Wang, Peng; Wang, Xiaoyong; Xiao, Min; Xu, Hangxun; Xu, Jian-Bin; Wang, Xinran

2016-01-08

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ∼3  nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals.

Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit

NASA Astrophysics Data System (ADS)

Zhang, Yuhan; Qiao, Jingsi; Gao, Si; Hu, Fengrui; He, Daowei; Wu, Bing; Yang, Ziyi; Xu, Bingchen; Li, Yun; Shi, Yi; Ji, Wei; Wang, Peng; Wang, Xiaoyong; Xiao, Min; Xu, Hangxun; Xu, Jian-Bin; Wang, Xinran

2016-01-01

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ˜3 nm . Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals.

Remote N2 plasma treatment to deposit ultrathin high-k dielectric as tunneling contact layer for single-layer MoS2 MOSFET

NASA Astrophysics Data System (ADS)

Qian, Qingkai; Zhang, Zhaofu; Hua, Mengyuan; Wei, Jin; Lei, Jiacheng; Chen, Kevin J.

2017-12-01

Remote N2 plasma treatment is explored as a surface functionalization technique to deposit ultrathin high-k dielectric on single-layer MoS2. The ultrathin dielectric is used as a tunneling contact layer, which also serves as an interfacial layer below the gate region for fabricating top-gate MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs). The fabricated devices exhibited small hysteresis and mobility as high as 14 cm2·V-1·s-1. The contact resistance was significantly reduced, which resulted in the increase of drain current from 20 to 56 µA/µm. The contact resistance reduction can be attributed to the alleviated metal-MoS2 interface reaction and the preserved conductivity of MoS2 below the source/drain metal contact.

Refractory lining system for high wear area of high temperature reaction vessel

DOEpatents

Hubble, David H.; Ulrich, Klaus H.

1998-01-01

A refractory-lined high temperature reaction vessel comprises a refractory ring lining constructed of refractory brick, a cooler, and a heat transfer medium disposed between the refractory ring lining and the cooler. The refractory brick comprises magnesia (MgO) and graphite. The heat transfer medium contacts the refractory brick and a cooling surface of the cooler, and is composed of a material that accommodates relative movement between the refractory brick and the cooler. The brick is manufactured such that the graphite has an orientation providing a high thermal conductivity in the lengthwise direction through the brick that is higher than the thermal conductivity in directions perpendicular to the lengthwise direction. The graphite preferably is flake graphite, in the range of about 10 to 20 wt %, and has a size distribution selected to provide maximum brick density. The reaction vessel may be used for performing a reaction process including the steps of forming a layer of slag on a melt in the vessel, the slag having a softening point temperature range, and forming a protective frozen layer of slag on the interior-facing surface of the refractory lining in at least a portion of a zone where the surface contacts the layer of slag, the protective frozen layer being maintained at or about the softening point of the slag.

Depositing bulk or micro-scale electrodes

DOEpatents

Shah, Kedar G.; Pannu, Satinderpall S.; Tolosa, Vanessa; Tooker, Angela C.; Sheth, Heeral J.; Felix, Sarah H.; Delima, Terri L.

2016-11-01

Thicker electrodes are provided on microelectronic device using thermo-compression bonding. A thin-film electrical conducting layer forms electrical conduits and bulk depositing provides an electrode layer on the thin-film electrical conducting layer. An insulating polymer layer encapsulates the electrically thin-film electrical conducting layer and the electrode layer. Some of the insulating layer is removed to expose the electrode layer.

Nanoconstricted structure for current-confined path in current-perpendicular-to-plane spin valves with high magnetoresistance

NASA Astrophysics Data System (ADS)

Fukuzawa, H.; Yuasa, H.; Koi, K.; Iwasaki, H.; Tanaka, Y.; Takahashi, Y. K.; Hono, K.

2005-05-01

We have successfully observed a nanoconstricted structure for current-confined-path (CCP) effect in current-perpendicular-to-plane-giant-magnetoresistance (CPP-GMR) spin valves. By inserting an AlCu nano-oxide layer (NOL) formed by ion-assisted oxidation (IAO) between a pinned layer and a free layer, the MR ratio was increased while maintaining a small area resistance product (RA). The cross-sectional high-resolution transmission electron microscopy image of the sample with RA =380mΩμm2, ΔRA =16mΩμm2, and MR ratio=4.3% showed that an amorphous oxide layer is a main part of the NOL that blocks the electron conduction perpendicular to plane. Some parts of the NOL are punched through crystalline, metallic channels having a diameter of a few nanometers, which are thought to work as nanoconstricted electron conduction paths between the pinned layer and the free layer. Nano-energy-dispersive-x-ray-spectrum analysis also showed that Cu is enriched in the metallic channels, whereas Al is enriched in the amorphous oxide region, indicating that the metallic channel is made of Cu and the oxide is made of Al2O3. The nanoconstricted structure with good segregation between the metallic channel and the oxide layer enables us to realize a large MR ratio in CCP-CPP spin valves.

Capillary suspensions as beneficial formulation concept for high energy density Li-ion battery electrodes

NASA Astrophysics Data System (ADS)

Bitsch, Boris; Gallasch, Tobias; Schroeder, Melanie; Börner, Markus; Winter, Martin; Willenbacher, Norbert

2016-10-01

We introduce a novel formulation concept to prepare high capacity graphite electrodes for lithium ion batteries. The concept is based on the capillary suspension phenomenon: graphite and conductive agent are dispersed in an aqueous binder solution and the organic solvent octanol is added as immiscible, secondary fluid providing the formation of a sample-spanning network resulting in unique stability and coating properties. No additional processing steps compared to conventional slurry preparation are required. The resulting ultra-thick electrodes comprise mass loadings of about 16.5 mg cm-2, uniform layer thickness, and superior edge contours. The adjustment of mechanical energy input ensures uniform distribution of the conductive agent and sufficient electronic conductivity of the final dry composite electrode. The resulting pore structure is due to the stable network provided by the secondary fluid which evaporates residue-free during drying. Constant current-constant potential (CC-CP) cycling clearly indicates that the corresponding microstructure significantly improves the kinetics of reversible Li+ (de-) intercalation. A double layer electrode combining a conventionally prepared layer coated directly onto the Cu current collector with an upper layer stabilized with octanol was prepared applying wet-on-wet coating. CC-CP cycling data confirms that staged porosity within the electrode cross section results in superior electrochemical performance.

Three-Dimensional Magnetotelluric Imaging of the Cascadia Subduction Zone with an Amphibious Array

NASA Astrophysics Data System (ADS)

Egbert, G. D.; Yang, B.; Bedrosian, P.; Kelbert, A.; Key, K.; Livelybrooks, D.; Parris, B. A.; Schultz, A.

2017-12-01

We present results from three-dimensional inversion of an amphibious magnetotelluric (MT) array consisting of 71 offshore and 75 onshore sites in the central part of Cascadia, to image down-dip and along strike variations of electrical conductivity, and to constrain the 3D distribution of fluids and melt in the subduction zone. The array is augmented by EarthScope TA MT data and legacy 2D profiles providing sparser coverage of western WA, OR, and northern CA. The prior model for the inversion includes ocean bathymetry, conductive marine sediments, and a resistive subducting plate, with geometry derived from the model of McCrory et al. (2012) and seismic tomography. Highly conductive features appear just above the interface with the a priori resistive plate in three zones. (1) In the area with marine MT data a conductive layer, which we associate with fluid-rich decollement and subduction channel sediments, extends eastward from the trench to underthrust the seaward edge of Siletzia, which is clearly seen as a thick crustal resistor. The downdip extent of the underthrust conductive layer is a remarkably uniform 35 km. (2) High conductivities, consistent with metamorphic fluids associated with eclogitization, occur near the forearc mantle corner. Conductivity is highly variable along strike, organized in a series of E-W to diagonal elongated conductive/resistive structures, whose significance remains enigmatic. (3) High conductivities associated with fluids and melts are found in the backarc, again exhibiting substantial along strike variability.

Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer.

PubMed

Song, Jie; Han, Jung

2017-03-02

We demonstrate growing nitrogen-polar (N-polar) GaN epilayer on c-plane sapphire using a thin AlN buffer layer by metalorganic chemical vapor deposition. We have studied the influence of the AlN buffer layer on the polarity, crystalline quality, and surface morphology of the GaN epilayer and found that the growth temperature of the AlN buffer layer played a critical role in the growth of the GaN epilayer. The low growth temperature of the AlN buffer results in gallium-polar GaN. Even a nitridation process has been conducted. High growth temperature for an AlN buffer layer is required to achieve pure N-polarity, high crystalline quality, and smooth surface morphology for a GaN epilayer.

High-quality multilayer graphene on an insulator formed by diffusion controlled Ni-induced layer exchange

NASA Astrophysics Data System (ADS)

Murata, H.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.; Toko, K.

2017-12-01

The Ni-induced layer-exchange growth of amorphous carbon is a unique method used to fabricate uniform multilayer graphene (MLG) directly on an insulator. To improve the crystal quality of MLG, we prepare AlOx or SiO2 interlayers between amorphous C and Ni layers, which control the extent of diffusion of C atoms into the Ni layer. The growth morphology and Raman spectra observed from MLG formed by layer exchange strongly depend on the material type and thickness of the interlayers; a 1-nm-thick AlOx interlayer is found to be ideal for use in experiments. Transmission electron microscopy and electron energy-loss spectra reveal that the crystal quality of the resulting MLG is much higher than that of a sample without an interlayer. The grain size reaches a few μm, leading to an electrical conductivity of 1290 S/cm. The grain size and the electrical conductivity are the highest among MLG synthesized using a solid-phase reaction including metal-induced crystallization. The direct synthesis of uniform, high-quality MLG on arbitrary substrates will pave the way for advanced electronic devices integrated with carbon materials.

Ambipolar pentacene field-effect transistor with double-layer organic insulator

NASA Astrophysics Data System (ADS)

Kwak, Jeong-Hun; Baek, Heume-Il; Lee, Changhee

2006-08-01

Ambipolar conduction in organic field-effect transistor is very important feature to achieve organic CMOS circuitry. We fabricated an ambipolar pentacene field-effect transistors consisted of gold source-drain electrodes and double-layered PMMA (Polymethylmethacrylate) / PVA (Polyvinyl Alcohol) organic insulator on the ITO(Indium-tin-oxide)-patterned glass substrate. These top-contact geometry field-effect transistors were fabricated in the vacuum of 10 -6 Torr and minimally exposed to atmosphere before its measurement and characterized in the vacuum condition. Our device showed reasonable p-type characteristics of field-effect hole mobility of 0.2-0.9 cm2/Vs and the current ON/OFF ratio of about 10 6 compared to prior reports with similar configurations. For the n-type characteristics, field-effect electron mobility of 0.004-0.008 cm2/Vs and the current ON/OFF ratio of about 10 3 were measured, which is relatively high performance for the n-type conduction of pentacene field-effect transistors. We attributed these ambipolar properties mainly to the hydroxyl-free PMMA insulator interface with the pentacene active layer. In addition, an increased insulator capacitance due to double-layer insulator structure with high-k PVA layer also helped us to observe relatively good n-type characteristics.

Solar cells having integral collector grids

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr. (Inventor)

1978-01-01

A heterojunction or Schottky barrier photovoltaic device is described, comprising a conductive base metal layer. A back surface field region was formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal oxide layer in integral contact with the n-type layer of the heterojunction or Schottky barrier device. A metal alloy grid network was included. An insulating layer prevented electrical contact between the conductive metal base layer and the transparent, conductive metal oxide layer.

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes.

PubMed

Hu, Shiben; Ning, Honglong; Lu, Kuankuan; Fang, Zhiqiang; Li, Yuzhi; Yao, Rihui; Xu, Miao; Wang, Lei; Peng, Junbiao; Lu, Xubing

2018-03-27

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al 2 O 3 ) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al 2 O 3 PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al 2 O 3 PVL exhibited remarkable mobility of 33.5-220.1 cm 2 /Vs when channel length varies from 60 to 560 μ m. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously.

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes

PubMed Central

Lu, Kuankuan; Li, Yuzhi; Xu, Miao; Wang, Lei; Peng, Junbiao; Lu, Xubing

2018-01-01

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al2O3) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al2O3 PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al2O3 PVL exhibited remarkable mobility of 33.5–220.1 cm2/Vs when channel length varies from 60 to 560 μm. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously. PMID:29584710

Layered Structural Co-Based MOF with Conductive Network Frames as a New Supercapacitor Electrode.

PubMed

Yang, Jie; Ma, Zhihua; Gao, Weixue; Wei, Mingdeng

2017-01-12

Layered structural Co-MOF nanosheets were synthesized and then used as an electrode material for supercapacitors for the first time. This material exhibited a high specific capacitance, a good rate capability, and an excellent cycling stability. A maximum capacitance of 2564 F g -1 can be achieved at a current density of 1 Ag -1 . Moreover, the capacitance retention can be kept at 95.8 % respectively of its initial value after 3000 cycles. To the best of our knowledge, both the specific capacitance and the capacitance retention were the highest values reported for MOF materials as supercapacitor electrodes until now. Such a high supercapacitive performance might be attributed to the intrinsic characteristics of this kind of Co-MOF material, including its layered structure, conductive network frame, and thin nanosheet. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication and stability investigation of ultra-thin transparent and flexible Cu-Ag-Au tri-layer film on PET

NASA Astrophysics Data System (ADS)

Prakasarao, Ch Surya; D'souza, Slavia Deeksha; Hazarika, Pratim; Karthiselva N., S.; Ramesh Babu, R.; Kovendhan, M.; Kumar, R. Arockia; Joseph, D. Paul

2018-04-01

The need for transparent conducting electrodes with high transmittance, low sheet resistance and flexibility to replace Indium Tin Oxide is ever growing. We have deposited and studied the performance of ultra-thin Cu-Ag-Au tri-layer films over a flexible poly-ethylene terephthalate substrate. Scotch tape test showed good adhesion of the metallic film. Transmittance of the tri-layer was around 40 % in visible region. Optical profiler measurements were done to study the surface features. The XRD pattern revealed that film was amorphous. Sheet resistance measured by four probe technique was around 7.7 Ohm/Δ and was stable up to 423 K. The transport parameters by Hall effect showed high conductivity and carrier concentration with a mobility of 5.58 cm2/Vs. Tests performed in an indigenously designed bending unit indicated the films to be stable both mechanically and electrically even after 50,000 bending cycles.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Ji-Hui; Yuan, Qinghong; Deng, Huixiong

Current thermoelectric (TE) materials often have low performance or contain less abundant and/or toxic elements, thus limiting their large-scale applications. Therefore, new TE materials with high efficiency and low cost are strongly desirable. Here we demonstrate that SiS and SiSe monolayers made from nontoxic and earth-abundant elements intrinsically have low thermal conductivities arising from their low-frequency optical phonon branches with large overlaps with acoustic phonon modes, which is similar to the state-of-the-art experimentally demonstrated material SnSe with a layered structure. Together with high thermal power factors due to their two-dimensional nature, they show promising TE performances with large figure ofmore » merit (ZT) values exceeding 1 or 2 over a wide range of temperatures. We establish some basic understanding of identifying layered materials with low thermal conductivities, which can guide and stimulate the search and study of other layered materials for TE applications.« less

Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes

PubMed Central

2013-01-01

We propose a transparent conductive oxide electrode scheme of gallium oxide nanoparticle mixed with a single-walled carbon nanotube (Ga2O3 NP/SWNT) layer for deep ultraviolet light-emitting diodes using spin and dipping methods. We investigated the electrical, optical and morphological properties of the Ga2O3 NP/SWNT layers by increasing the thickness of SWNTs via multiple dipping processes. Compared with the undoped Ga2O3 films (current level 9.9 × 10-9 A @ 1 V, transmittance 68% @ 280 nm), the current level flowing in the Ga2O3 NP/SWNT increased by approximately 4 × 105 times and the transmittance improved by 9% after 15 times dip-coating (current level 4 × 10-4 A at 1 V; transmittance 77.0% at 280 nm). These improvements result from both native high transparency of Ga2O3 NPs and high conductivity and effective current spreading of SWNTs. PMID:24295342

Effect of AlN layer on the bipolar resistive switching behavior in TiN thin film based ReRAM device for non-volatile memory application

NASA Astrophysics Data System (ADS)

Prakash, Ravi; Kaur, Davinder

2018-05-01

The effect of an additional AlN layer in the Cu/TiN/AlN/Pt stack configuration deposited using sputtering has been investigated. The Cu/TiN/AlN/Pt device shows a tristate resistive switching. Multilevel switching is facilitated by ionic and metallic filament formation, and the nature of the filaments formed is confirmed by performing a resistance vs. temperature measurement. Ohmic behaviour and trap controlled space charge limited current (SCLC) conduction mechanisms are confirmed as dominant conduction mechanism at low resistance state (LRS) and high resistance state (HRS). High resistance ratio (102) corresponding to HRS and LRS, good write/erase endurance (105) and non-volatile long retention (105s) are also observed. Higher thermal conductivity of the AlN layer is the main reasons for the enhancement of resistive switching performance in Cu/TiN/AlN/Pt cell. The above result suggests the feasibility of Cu/TiN/AlN/Pt devices for multilevel nonvolatile ReRAM application.

Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields

DOEpatents

Chaffin, deceased, Roger J.; Dawson, Ralph; Fritz, Ian J.; Osbourn, Gordon C.; Zipperian, Thomas E.

1989-01-01

A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space which includes a lowest energy .GAMMA.-valley and a next lowest energy L-valley, each k-vector corresponding to one of the orthogonal directions defined by the planes of said layers and the directions perpendicular thereto. The layer thicknesses of the quantum well layers are selected to provide a superlattice L.sub.2D -valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley.

Highly efficient and stable inverted perovskite solar cell employing PEDOT:GO composite layer as a hole transport layer.

PubMed

Yu, Jae Choul; Hong, Ji A; Jung, Eui Dae; Kim, Da Bin; Baek, Soo-Min; Lee, Sukbin; Cho, Shinuk; Park, Sung Soo; Choi, Kyoung Jin; Song, Myoung Hoon

2018-01-18

The beneficial use of a hole transport layer (HTL) as a substitution for poly(3,4-ethlyenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) is regarded as one of the most important approaches for improving the stability and efficiency of inverted perovskite solar cells. Here, we demonstrate highly efficient and stable inverted perovskite solar cells by applying a GO-doped PEDOT:PSS (PEDOT:GO) film as an HTL. The high performance of this solar cell stems from the excellent optical and electrical properties of the PEDOT:GO film, including a higher electrical conductivity, a higher work function related to the reduced contact barrier between the perovskite layer and the PEDOT:GO layer, enhanced crystallinity of the perovskite crystal, and suppressed leakage current. Moreover, the device with the PEDOT:GO layer showed excellent long-term stability in ambient air conditions. Thus, the enhancement in the efficiency and the excellent stability of inverted perovskite solar cells are promising for the eventual commercialization of perovskite optoelectronic devices.

Conductive layer for biaxially oriented semiconductor film growth

DOEpatents

Findikoglu, Alp T.; Matias, Vladimir

2007-10-30

A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.

Layered Metal Nanoparticle Structures on Electrodes for Sensing, Switchable Controlled Uptake/Release, and Photo-electrochemical Applications.

PubMed

Tel-Vered, Ran; Kahn, Jason S; Willner, Itamar

2016-01-06

Layered metal nanoparticle (NP) assemblies provide highly porous and conductive composites of unique electrical and optical (plasmonic) properties. Two methods to construct layered metal NP matrices are described, and these include the layer-by-layer deposition of NPs, or the electropolymerization of monolayer-functionalized NPs, specifically thioaniline-modified metal NPs. The layered NP composites are used as sensing matrices through the use of electrochemistry or surface plasmon resonance (SPR) as transduction signals. The crosslinking of the metal NP composites with molecular receptors, or the imprinting of molecular recognition sites into the electropolymerized NP matrices lead to selective and chiroselective sensing interfaces. Furthermore, the electrosynthesis of redox-active, imprinted, bis-aniline bridged Au NP composites yields electrochemically triggered "sponges" for the switchable uptake and release of electron-acceptor substrates, and results in conductive surfaces of electrochemically controlled wettability. Also, photosensitizer-relay-crosslinked Au NP composites, or electrochemically polymerized layered semiconductor quantum dot/metal NP matrices on electrodes, are demonstrated as functional nanostructures for photoelectrochemical applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hazards protection for space suits and spacecraft

NASA Technical Reports Server (NTRS)

Kosmo, Joseph J. (Inventor); Dawn, Frederic S. (Inventor)

1990-01-01

A flexible multi-layered covering article for protection against the hazards of exposure to the environment of outer space is disclosed. The covering includes an outer layer section comprising an outermost lamina of woven expanded tetrafluoroethylene yarns (Gore Tex) for protecting against abrasion and tearing, an underlying weave of meta-aramid yarns (Nomex) and para-aramid yarns (Kevlar) for particle impart protection, and electrostatic charge dissipation and control system incorporated therein, and a chemical contaminants control barrier applied as a coating. A middle section includes a succession of thermal insulating layers of polymeric thermoplastic or thermoforming material, each of which is coated with a metal deposit of high infra-red emissivity and low solar radiation absorption characteristics and separated from adjacent insulating layers by a low thermal conductance material. The covering further includes a radiation attenuating layer of a tungsten-loaded polymeric elastomer binder for protecting against bremsstrahlung radiation and an inner layer of rip-stop polyester material for abrasion protection. A chloroprene coating may be supplied the polyester-material for added micrometeroid protection. Securing means of low heat conductance material secures the multi-layers together as a laminar composite.

Analysis and evaluation in the production process and equipment area of the low-cost solar array project

NASA Technical Reports Server (NTRS)

Wolf, M.; Goldman, H.

1981-01-01

The attributes of the various metallization processes were investigated. It is shown that several metallization process sequences will lead to adequate metallization for large area, high performance solar cells at a metallization add on price in the range of $6. to 12. m squared, or 4 to $.8/W(peak), assuming 15% efficiency. Conduction layer formation by thick film silver or by tin or tin/lead solder leads to metallization add-on prices significantly above the $6. to 12/m squared range c.) The wet chemical processes of electroless and electrolytic plating for strike/barrier layer and conduction layer formation, respectively, seem to be most cost effective.

Multilayered Si nanoparticle/reduced graphene oxide hybrid as a high-performance lithium-ion battery anode.

PubMed

Chang, Jingbo; Huang, Xingkang; Zhou, Guihua; Cui, Shumao; Hallac, Peter B; Jiang, Junwei; Hurley, Patrick T; Chen, Junhong

2014-02-01

Multilayered Si/RGO anode nanostructures, featuring alternating Si nanoparticle (NP) and RGO layers, good mechanical stability, and high electrical conductivity, allow Si NPs to easily expand between RGO layers, thereby leading to high reversible capacity up to 2300 mAh g(-1) at 0.05 C (120 mA g(-1) ) and 87% capacity retention (up to 630 mAh g(-1) ) at 10 C after 152 cycles. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A trifunctional multi-walled carbon nanotubes/polyethylene glycol (MWCNT/PEG)-coated separator through a layer-by-layer coating strategy for high-energy Li–S batteries

DOE PAGES

Luo, Liu; Chung, Sheng-Heng; Manthiram, Arumugam

2016-10-11

In this study, a trifunctional separator fabricated by using a light-weight layer-by-layer multi-walled carbon nanotubes/polyethylene glycol (MWCNT/PEG) coating has been explored in lithium–sulfur (Li–S) batteries. The conductive MWCNT/PEG coating serves as (i) an upper current collector for accelerating the electron transport and benefiting the electrochemical reaction kinetics of the cell, (ii) a net-like filter for blocking and intercepting the migrating polysulfides through a synergistic effect including physical and chemical interactions, and (iii) a layered barrier for inhibiting the continuous diffusion and alleviating the volume change of the trapped active material by introducing a “buffer zone” in between the coated layers.more » The multi-layered MWCNT/PEG coating allows the use of the conventional pure sulfur cathode with a high sulfur content (78 wt%) and high sulfur loading (up to 6.5 mg cm -2) to achieve a high initial discharge capacity of 1206 mA h g -1 at C/5 rate, retaining a superior capacity of 630 mA h g -1 after 300 cycles. Lastly, the MWCNT/PEG-coated separator optimized by the facile layer-by-layer coating method provides a promising and feasible option for advanced Li–S batteries with high energy density.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazzarella, Ricardo; Slocum, Alexander H.; Doherty, Tristan

Electrochemical cells and methods of making electrochemical cells are described herein. In some embodiments, an apparatus includes a multi-layer sheet for encasing an electrode material for an electrochemical cell. The multi-layer sheet including an outer layer, an intermediate layer that includes a conductive substrate, and an inner layer disposed on a portion of the conductive substrate. The intermediate layer is disposed between the outer layer and the inner layer. The inner layer defines an opening through which a conductive region of the intermediate layer is exposed such that the electrode material can be electrically connected to the conductive region. Thus,more » the intermediate layer can serve as a current collector for the electrochemical cell.« less

Electrochemical cells and methods of manufacturing the same

DOEpatents

Bazzarella, Ricardo; Slocum, Alexander H; Doherty, Tristan; Cross, III, James C

2015-11-03

Electrochemical cells and methods of making electrochemical cells are described herein. In some embodiments, an apparatus includes a multi-layer sheet for encasing an electrode material for an electrochemical cell. The multi-layer sheet including an outer layer, an intermediate layer that includes a conductive substrate, and an inner layer disposed on a portion of the conductive substrate. The intermediate layer is disposed between the outer layer and the inner layer. The inner layer defines an opening through which a conductive region of the intermediate layer is exposed such that the electrode material can be electrically connected to the conductive region. Thus, the intermediate layer can serve as a current collector for the electrochemical cell.

Effects of substrate conductivity on cell morphogenesis and proliferation using tailored, atomic layer deposition-grown ZnO thin films

PubMed Central

Choi, Won Jin; Jung, Jongjin; Lee, Sujin; Chung, Yoon Jang; Yang, Cheol-Soo; Lee, Young Kuk; Lee, You-Seop; Park, Joung Kyu; Ko, Hyuk Wan; Lee, Jeong-O

2015-01-01

We demonstrate that ZnO films grown by atomic layer deposition (ALD) can be employed as a substrate to explore the effects of electrical conductivity on cell adhesion, proliferation, and morphogenesis. ZnO substrates with precisely tunable electrical conductivity were fabricated on glass substrates using ALD deposition. The electrical conductivity of the film increased linearly with increasing duration of the ZnO deposition cycle (thickness), whereas other physical characteristics, such as surface energy and roughness, tended to saturate at a certain value. Differences in conductivity dramatically affected the behavior of SF295 glioblastoma cells grown on ZnO films, with high conductivity (thick) ZnO films causing growth arrest and producing SF295 cell morphologies distinct from those cultured on insulating substrates. Based on simple electrostatic calculations, we propose that cells grown on highly conductive substrates may strongly adhere to the substrate without focal-adhesion complex formation, owing to the enhanced electrostatic interaction between cells and the substrate. Thus, the inactivation of focal adhesions leads to cell proliferation arrest. Taken together, the work presented here confirms that substrates with high conductivity disturb the cell-substrate interaction, producing cascading effects on cellular morphogenesis and disrupting proliferation, and suggests that ALD-grown ZnO offers a single-variable method for uniquely tailoring conductivity. PMID:25897486

High quality transparent conducting oxide thin films

DOEpatents

Gessert, Timothy A.; Duenow, Joel N.; Barnes, Teresa; Coutts, Timothy J.

2012-08-28

A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

High enthalpy hypersonic boundary layer flow

NASA Technical Reports Server (NTRS)

Yanow, G.

1972-01-01

A theoretical and experimental study of an ionizing laminar boundary layer formed by a very high enthalpy flow (in excess of 12 eV per atom or 7000 cal/gm) with allowance for the presence of helium driver gas is described. The theoretical investigation has shown that the use of variable transport properties and their respective derivatives is very important in the solution of equilibrium boundary layer equations of high enthalpy flow. The effect of low level helium contamination on the surface heat transfer rate is minimal. The variation of ionization is much smaller in a chemically frozen boundary layer solution than in an equilibrium boundary layer calculation and consequently, the variation of the transport properties in the case of the former was not essential in the integration. The experiments have been conducted in a free piston shock tunnel, and a detailed study of its nozzle operation, including the effects of low levels of helium driver gas contamination has been made. Neither the extreme solutions of an equilibrium nor of a frozen boundary layer will adequately predict surface heat transfer rate in very high enthalpy flows.

Ni foam supported quasi-core-shell structure of ultrathin Ti3C2 nanosheets through electrostatic layer-by-layer self-assembly as high rate-performance electrodes of supercapacitors

NASA Astrophysics Data System (ADS)

Tian, Yapeng; Yang, Chenhui; Que, Wenxiu; He, Yucheng; Liu, Xiaobin; Luo, Yangyang; Yin, Xingtian; Kong, Ling Bing

2017-11-01

Supercapacitor, as an important energy storage device, is a critical component for next generation electric power system, due to its high power density and long cycle life. In this study, a novel electrode material with quasi-core-shell structure, consisting of negatively charged few layer Ti3C2 nanosheets (FL-Ti3C2) and positively charged polyethyleneimine as building blocks, has been prepared by using an electrostatic layer-by-layer self-assembly method, with highly conductive Ni foam to be used as the skeleton. The unique quasi-core-shell structured ultrathin Ti3C2 nanosheets provide an excellent electron channel, ion transport channel and large effective contact area, thus leading to a great improvement in electrochemical performance of the material. The specific capacitance of the binder-free FL-Ti3C2@Ni foam electrodes reaches 370 F g-1 at the scan rate of 2 mV s-1 and a specific capacitance of 117 F g-1 is obtained even at the scan rate of 1000 mV s-1 in the electrolyte of Li2SO4, indicating a high rate performance. In addition, this electrode shows a long-term cyclic stability with a loss of only 13.7% after 10,000 circles. Furthermore, quantitative analysis has been conducted to ensure the relationship between the capacitive contribution and the rate performance of the as-fabricated electrode.

High Performance Proton-Conducting Solid Oxide Fuel Cells with a Layered Perovskite GdBaCuCoO5+ x Cathode

NASA Astrophysics Data System (ADS)

Zhang, Xiaozhen; Jiang, Yuhua; Hu, Xuebing; Sun, Liangliang; Ling, Yihan

2018-03-01

Proton-conducting solid oxide fuel cell (H-SOFC) based on layered perovskite type GdBaCuCoO5+x (GBCC) cathode was fabricated with in situ drop-coating BaZr0.1Ce0.7Y0.2O3-δ (BZCY) electrolyte membrane. The influences of Cu doping into Co sites of GdBaCo2O5+ x on the electrical conductivity and conduction mechanism, thermal expansion property and electrochemical performance of cathode materials and corresponding single cell were investigated. Results show that the electrical conductivity decreased and the conduction mechanism would gradually transform to the semiconductor-like behavior. A high maximum power density of 480 mW cm-2 was obtained for the anode supported NiO-BZCY/NiO-BZCY/BZCY/GBCC single cells with wet H2 fuel at 700 °C. The corresponding polarization resistance was as low as 0.17 Ω cm2. The excellent electrochemical performance of as-prepared single cell indicates that GBCC is a good candidate of cathode materials for H-SOFCs.

Ultrasonically spray coated silver layers from designed precursor inks for flexible electronics.

PubMed

Marchal, W; Vandevenne, G; D'Haen, J; Calmont de Andrade Almeida, A; Durand Sola, M A; van den Ham, E J; Drijkoningen, J; Elen, K; Deferme, W; Van Bael, M K; Hardy, A

2017-05-26

Integration of electronic circuit components onto flexible materials such as plastic foils, paper and textiles is a key challenge for the development of future smart applications. Therefore, conductive metal features need to be deposited on temperature sensitive substrates in a fast and straightforward way. The feasibility of these emerging (nano-) electronic technologies depends on the availability of well-designed deposition techniques and on novel functional metal inks. As ultrasonic spray coating (USSC) is one of the most promising techniques to meet the above requirements, innovative metal organic decomposition (MOD) inks are designed to deposit silver features on plastic foils. Various amine ligands were screened and their influence on the ink stability and the characteristics of the resulting metal depositions were evaluated to determine the optimal formulation. Eventually, silver layers with excellent performance in terms of conductivity (15% bulk silver conductivity), stability, morphology and adhesion could be obtained, while operating in a very low temperature window of 70 °C-120 °C. Moreover, the optimal deposition conditions were determined via an in-depth analysis of the ultrasonically sprayed silver layers. Applying these tailored MOD inks, the USSC technique enabled smooth, semi-transparent silver layers with a tunable thickness on large areas without time-consuming additional sintering steps after deposition. Therefore, this novel combination of nanoparticle-free Ag-inks and the USSC process holds promise for high throughput deposition of highly conductive silver features on heat sensitive substrates and even 3D objects.

Ultrasonically spray coated silver layers from designed precursor inks for flexible electronics

NASA Astrophysics Data System (ADS)

Marchal, W.; Vandevenne, G.; D'Haen, J.; Almeida, A. Calmont de Andrade; Durand Sola, M. A., Jr.; van den Ham, E. J.; Drijkoningen, J.; Elen, K.; Deferme, W.; Van Bael, M. K.; Hardy, A.

2017-05-01

Integration of electronic circuit components onto flexible materials such as plastic foils, paper and textiles is a key challenge for the development of future smart applications. Therefore, conductive metal features need to be deposited on temperature sensitive substrates in a fast and straightforward way. The feasibility of these emerging (nano-) electronic technologies depends on the availability of well-designed deposition techniques and on novel functional metal inks. As ultrasonic spray coating (USSC) is one of the most promising techniques to meet the above requirements, innovative metal organic decomposition (MOD) inks are designed to deposit silver features on plastic foils. Various amine ligands were screened and their influence on the ink stability and the characteristics of the resulting metal depositions were evaluated to determine the optimal formulation. Eventually, silver layers with excellent performance in terms of conductivity (15% bulk silver conductivity), stability, morphology and adhesion could be obtained, while operating in a very low temperature window of 70 °C-120 °C. Moreover, the optimal deposition conditions were determined via an in-depth analysis of the ultrasonically sprayed silver layers. Applying these tailored MOD inks, the USSC technique enabled smooth, semi-transparent silver layers with a tunable thickness on large areas without time-consuming additional sintering steps after deposition. Therefore, this novel combination of nanoparticle-free Ag-inks and the USSC process holds promise for high throughput deposition of highly conductive silver features on heat sensitive substrates and even 3D objects.

Rational construction of nickel cobalt sulfide nanoflakes on CoO nanosheets with the help of carbon layer as the battery-like electrode for supercapacitors

NASA Astrophysics Data System (ADS)

Lin, Jinghuang; Liu, Yulin; Wang, Yiheng; Jia, Henan; Chen, Shulin; Qi, Junlei; Qu, Chaoqun; Cao, Jian; Fei, Weidong; Feng, Jicai

2017-09-01

Herein, binder-free hierarchically structured nickel cobalt sulfide nanoflakes on CoO nanosheets with the help of carbon layer (Ni-Co-S@C@CoO NAs) are fabricated via hydrothermal synthesis, carbonization treatment and electrodeposition, where three key components (CoO nanosheet arrays, a carbon layer and Ni-Co-S nanoflakes) are strategically combined to construct an efficient electrode for supercapacitors. The highly well-defined CoO nanosheets are utilized as ideal conductive scaffolds, where the conductivity is further improved by coating carbon layer, as well as the large electroactive surface area of Ni-Co-S nanoflakes. Furthermore, self-supported electrodes are directly grown on Ni foam without conductive additives or binders, which can effectively simplify the whole preparation process and achieve excellent electrical contact. Benefiting from the unique structural features, the hierarchically structured Ni-Co-S@C@CoO NAs exhibit high specific capacitance up to 4.97 F cm-2, excellent rate capability, and maintains 93.2% of the initial capacitance after 10000 cycles. Furthermore, an asymmetric supercapacitor using the Ni-Co-S@C@CoO NAs electrode and activated carbon is assembled, which achieves a high energy density (49.7 W h kg-1) with long cycling lifespan. These results demonstrate the as-fabricated Ni-Co-S@C@CoO NAs can be a competitive battery-like electrode for supercapacitors in energy storages.

Thouless length and valley degeneracy factor of ZnMnO thin films with anisotropic, highly conductive surface layers

NASA Astrophysics Data System (ADS)

Vegesna, Sahitya V.; Bürger, Danilo; Patra, Rajkumar; Abendroth, Barbara; Skorupa, Ilona; Schmidt, Oliver G.; Schmidt, Heidemarie

2017-06-01

Isothermal magnetoresistance (MR) of n-type conducting Zn1-xMnxO thin films on a sapphire substrate with a Mn content of 5 at. % has been studied in in-plane and out-of-plane magnetic fields up to 6 T in the temperature range of 5 K to 300 K. During pulsed laser deposition of the ZnMnO thin films, we controlled the thickness and roughness of a highly conductive ZnMnO surface layer. The measured MR has been modeled with constant s-d exchange (0.2 eV in ZnMnO) and electron spin (S = 5/2 for Mn2+) for samples with a single two dimensional (2D) ZnMnO layer, a single three dimensional (3D) ZnMnO layer, or a 2D and 3D (2D + 3D) ZnMnO layer in parallel. The temperature dependence of modeled Thouless length LTh (LTh ˜ T-0.5) is in good agreement with the theory [Andrearczyk et al., Phys. Rev. B 72, 121309(R) (2005)]. The superimposed positive and negative MR model for ZnCoO thin films [Xu et al., Phys. Rev. B 76, 134417 (2007)] has been extended in order to account for the increase in the density of states close to the Fermi level of n-ZnMnO due to substitutional Mn2+ ions and their effect on the negative MR in ZnMnO.

Tunable Interfacial Thermal Conductance by Molecular Dynamics

NASA Astrophysics Data System (ADS)

Shen, Meng

We study the mechanism of tunable heat transfer through interfaces between solids using a combination of non-equilibrium molecular dynamics simulation (NEMD), vibrational mode analysis and wave packet simulation. We investigate how heat transfer through interfaces is affected by factors including pressure, interfacial modulus, contact area and interfacial layer thickness, with an overreaching goal of developing fundamental knowledge that will allow one to tailor thermal properties of interfacial materials. The role of pressure and interfacial stiffness is unraveled by our studies on an epitaxial interface between two Lennard-Jones (LJ) crystals. The interfacial stiffness is varied by two different methods: (i) indirectly by applying pressure which due to anharmonic nature of bonding, increases interfacial stiffness, and (ii) directly by changing the interfacial bonding strength by varying the depth of the potential well of the LJ potential. When the interfacial bonding strength is low, quantitatively similar behavior to pressure tuning is observed when the interfacial thermal conductance is increased by directly varying the potential-well depth parameter of the LJ potential. By contrast, when the interfacial bonding strength is high, thermal conductance is almost pressure independent, and even slightly decreases with increasing pressure. This decrease can be explained by the change in overlap between the vibrational densities of states of the two crystalline materials. The role of contact area is studied by modeling structures comprised of Van der Waals junctions between single-walled nanotubes (SWCNT). Interfacial thermal conductance between SWCNTs is obtained from NEMD simulation as a function of crossing angle. In this case the junction conductance per unit area is essentially a constant. By contrast, interfacial thermal conductance between multiwalled carbon nanotubes (MWCNTs) is shown to increase with diameter of the nanotubes by recent experimental studies [1]. To elucidate this behavior we studied a simplified model comprised of an interface between two stacks of graphene ribbons to mimic the contact between multiwalled nanotubes. Our results, in agreement with experiment, show that the interfacial thermal conductance indeed increases with the number of graphene layers, corresponding to larger diameter and larger number of walls in MWCNT. The role of interfacial layer thickness is investigated by modeling a system of a few layers of graphene sandwiched between two silicon slabs. We show, by wave packet simulation and by theoretical calculation of a spring-mass model, that the transmission coefficient of individual vibrational modes is strongly dependent on the frequency and the number of graphene layers due to coherent interference effects; by contrast, the interfacial thermal conductance obtained in NEMD simulation, which represents an integral over all phonons, is essentially independent of the number of graphene layers, in agreement with recent experiments. Furthermore, when we heat one atomic layer of graphene directly, the effective interfacial conductance associated with heat dissipation to the silicon substrate is very small. We attribute this to the resistance associated with heat transfer between high and low frequency phonon modes within graphene. Finally, we also replaced graphene layers by a few WSe2 sheets and observed that interfacial thermal resistance of a Si/n-WSe2/Si structure increases linearly with interface thickness at least for 1 < n <= 20, indicating diffusive heat transfer mechanism, in contrast to ballistic behavior of a few graphene layers. The corresponding thermal conductivity (0.048 W m-1 K-1) of a few WSe2 layers is rather small. By comparing phonon dispersion of graphene layers and WSe2 sheets, we attribute the diffusive behavior of a few WSe2 sheets to abundant optical phonons at low and medium frequencies leading to very short mean free path. Our computational studies of effects of pressure and structural properties on interfacial thermal conductance provide fundamental insights for tunable heat transfer in nanostructures. [1] Professor D. Y. Li from University of Vanderbilt, private communication (Nov. 14, 2011).

A plug flow reactor model of a vanadium redox flow battery considering the conductive current collectors

NASA Astrophysics Data System (ADS)

König, S.; Suriyah, M. R.; Leibfried, T.

2017-08-01

A lumped-parameter model for vanadium redox flow batteries, which use metallic current collectors, is extended into a one-dimensional model using the plug flow reactor principle. Thus, the commonly used simplification of a perfectly mixed cell is no longer required. The resistances of the cell components are derived in the in-plane and through-plane directions. The copper current collector is the only component with a significant in-plane conductance, which allows for a simplified electrical network. The division of a full-scale flow cell into 10 layers in the direction of fluid flow represents a reasonable compromise between computational effort and accuracy. Due to the variations in the state of charge and thus the open circuit voltage of the electrolyte, the currents in the individual layers vary considerably. Hence, there are situations, in which the first layer, directly at the electrolyte input, carries a multiple of the last layer's current. The conventional model overestimates the cell performance. In the worst-case scenario, the more accurate 20-layer model yields a discharge capacity 9.4% smaller than that computed with the conventional model. The conductive current collector effectively eliminates the high over-potentials in the last layers of the plug flow reactor models that have been reported previously.

Multilayered composite proton exchange membrane and a process for manufacturing the same

DOEpatents

Santurri, Pasco R; Duvall, James H; Katona, Denise M; Mausar, Joseph T; Decker, Berryinne

2015-05-05

A multilayered membrane for use with fuel cells and related applications. The multilayered membrane includes a carrier film, at least one layer of an undoped conductive polymer electrolyte material applied onto the carrier film, and at least one layer of a conductive polymer electrolyte material applied onto the adjacent layer of polymer electrolyte material. Each layer of conductive polymer electrolyte material is doped with a plurality of nanoparticles. Each layer of undoped electrolyte material and doped electrolyte material may be applied in an alternating configuration, or alternatively, adjacent layers of doped conductive polymer electrolyte material is employed. The process for producing a multilayered composite membrane includes providing a carrier substrate and solution casting a layer of undoped conductive polymer electrolyte material and a layer of conductive polymer electrolyte material doped with nanoparticles in an alternating arrangement or in an arrangement where doped layers are adjacent to one another.

Method of forming a multiple layer dielectric and a hot film sensor therewith

NASA Technical Reports Server (NTRS)

Hopson, Purnell, Jr. (Inventor); Tran, Sang Q. (Inventor)

1990-01-01

The invention is a method of forming a multiple layer dielectric for use in a hot-film laminar separation sensor. The multiple layer dielectric substrate is formed by depositing a first layer of a thermoelastic polymer such as on an electrically conductive substrate such as the metal surface of a model to be tested under cryogenic conditions and high Reynolds numbers. Next, a second dielectric layer of fused silica is formed on the first dielectric layer of thermoplastic polymer. A resistive metal film is deposited on selected areas of the multiple layer dielectric substrate to form one or more hot-film sensor elements to which aluminum electrical circuits deposited upon the multiple layered dielectric substrate are connected.

Investigation on transmission and reflection characteristics of plasma array to 6 GHz high-power microwave

NASA Astrophysics Data System (ADS)

Yang, Liu; Yang, Zhongcun; Wan, Jianing; Liu, Hao

2016-10-01

For the safety of electronic equipment, a double-layer barrier of cylindrical plasma array was designed, and its protective performance to high-power microwave (HPM) were analyzed and the protective performance experiment was conducted. Combining the density distribution characteristic of the discharge plasma, the shielding effectiveness of the double-layer plasma on 6GHz HPM pulse was studied. The experiment results indicate that the protective effectiveness of two layers plasma array is better than that of one layer. Two layers plasma array can make the peak electric field of transmission waveform less than interference threshold of electronic equipment to achieve better protection effectiveness. Transmission attenuation of one layer and two layers plasma array to HPM can reach -6.6066dB and -24.9357dB. The results also show that for the existence of multiple reflection, even the plasma electron density is not high enough, it can realize a strong attenuation. The experiment results in this paper are of great significance in protecting against HPM and electromagnetic pulse.

SCB initiator

DOEpatents

Bickes Jr., Robert W.; Renlund, Anita M.; Stanton, Philip L.

1994-11-01

A detonator for high explosives initiated by mechanical impact includes a cylindrical barrel, a layer of flyer material mechanically covering the barrel at one end, and a semiconductor bridge ignitor including a pair of electrically conductive pads connected by a semiconductor bridge. The bridge is in operational contact with the layer, whereby ignition of said bridge forces a portion of the layer through the barrel to detonate the explosive. Input means are provided for igniting the semiconductor bridge ignitor.

SCB initiator

DOEpatents

Bickes, Jr., Robert W.; Renlund, Anita M.; Stanton, Philip L.

1994-01-01

A detonator for high explosives initiated by mechanical impact includes a cylindrical barrel, a layer of flyer material mechanically covering the barrel at one end, and a semiconductor bridge ignitor including a pair of electrically conductive pads connected by a semiconductor bridge. The bridge is in operational contact with the layer, whereby ignition of said bridge forces a portion of the layer through the barrel to detonate the explosive. Input means are provided for igniting the semiconductor bridge ignitor.

Transparent conducting oxides: A δ-doped superlattice approach

PubMed Central

Cooper, Valentino R.; Seo, Sung S. Ambrose; Lee, Suyoun; Kim, Jun Sung; Choi, Woo Seok; Okamoto, Satoshi; Lee, Ho Nyung

2014-01-01

Metallic states appearing at interfaces between dissimilar insulating oxides exhibit intriguing phenomena such as superconductivity and magnetism. Despite tremendous progress in understanding their origins, very little is known about how to control the conduction pathways and the distribution of charge carriers. Using optical spectroscopic measurements and density-functional theory (DFT) simulations, we examine the effect of SrTiO3 (STO) spacer layer thickness on the optical transparency and carrier distribution in La δ-doped STO superlattices. We experimentally observe that these metallic superlattices remain highly transparent to visible light; a direct consequence of the appropriately large gap between the O 2p and Ti 3d states. In superlattices with relatively thin STO layers, we predict that three-dimensional conduction would occur due to appreciable overlap of quantum mechanical wavefunctions between neighboring δ-doped layers. These results highlight the potential for using oxide heterostructures in optoelectronic devices by providing a unique route for creating novel transparent conducting oxides. PMID:25109668

Electrochemical cells and methods of manufacturing the same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazzarella, Ricardo; Slocum, Alexander H.; Doherty, Tristan

2016-07-26

Electrochemical cells and methods of making electrochemical cells are described herein. In some embodiments, an apparatus includes a multi-layer sheet for encasing an electrode material for an electrochemical cell. The multi-layer sheet including an outer layer, an intermediate layer that includes a conductive substrate, and an inner layer disposed on a portion of the conductive substrate. The intermediate layer is disposed between the outer layer and the inner layer. The inner layer defines an opening through which a conductive region of the intermediate layer is exposed such that the electrode material can be electrically connected to the conductive region. Thus,more » the intermediate layer can serve as a current collector for the electrochemical cell.« less

Turbulence measurements in high Reynolds number boundary layers

NASA Astrophysics Data System (ADS)

Vallikivi, Margit; Smits, Alexander

2013-11-01

Measurements are conducted in zero pressure gradient turbulent boundary layers for Reynolds numbers from Reθ = 9,000 to 225,000. The experiments were performed in the High Reynolds number Test Facility (HRTF) at Princeton University, which uses compressed air as the working fluid. Nano-Scale Thermal Anemometry Probes (NSTAPs) are used to acquire data with very high spatial and temporal precision. These new data are used to study the scaling behavior of the streamwise velocity fluctuations in the boundary layer and make comparisons with the scaling of other wall-bounded turbulent flows. Supported under ONR Grant N00014-09-1-0263 (program manager Ron Joslin) and NSF Grant CBET-1064257 (program manager Henning Winter).

The effect of adsorbates on the electrical stability of graphene studied by transient photocurrent spectroscopy

NASA Astrophysics Data System (ADS)

Kalkan, S. B.; Aydın, H.; Özkendir, D.; ćelebi, C.

2018-01-01

Adsorbate induced variations in the electrical conductivity of graphene layers with two different types of charge carriers are investigated by using the Transient Photocurrent Spectroscopy (TPS) measurement technique. In-vacuum TPS measurements taken for a duration of 5 ks revealed that the adsorption/desorption of atmospheric adsorbates leads to more than a 110% increment and a 45% decrement in the conductivity of epitaxial graphene (n-type) and chemical vapor deposition graphene (p-type) layers on semi-insulating silicon carbide (SiC) substrates, respectively. The graphene layers on SiC are encapsulated and passivated with a thin SiO2 film grown by the Pulsed Electron Deposition method. The measurements conducted for short periods and a few cycles showed that the encapsulation process completely suppresses the time dependent conductivity instability of graphene independent of its charge carrier type. The obtained results are used to construct an experimental model for identifying adsorbate related conductivity variations in graphene and also in other 2D materials with an inherently high surface-to-volume ratio.

Comparison between layers stacks of 67P/CG comet and spectrophotometric variability obtained from OSIRIS data

NASA Astrophysics Data System (ADS)

Ferrari, S.; Penasa, L.; La Forgia, F.; Massironi, M.; Naletto, G.; Lazzarin, M.; Fornasier, S.; Barucci, M. A.; Lucchetti, A.; Pajola, M.; Frattin, E.; Bertini, I.; Ferri, F.; Cremonese, G.

2017-09-01

The Rosetta/OSIRIS cameras unveiled the layered nature of comet 67P/Churyumov-Gerasimenko, suggesting that the comet bilobate shape results from the low-velocity merging of two independent onion-like objects. Several physiographical regions of the southern-hemisphere big lobe show stacks of layers forming high scarps, terraces and mesas. A spectrophotometric analysis of OSIRIS images based on multispectral data classifications was conducted in order to identify possible morphological, textural and/or compositional characters that allow to distinguish regional stacks of layers.

Graphene nanoplatelets: Thermal diffusivity and thermal conductivity by the flash method

NASA Astrophysics Data System (ADS)

Potenza, M.; Cataldo, A.; Bovesecchi, G.; Corasaniti, S.; Coppa, P.; Bellucci, S.

2017-07-01

The present work deals with the measurement of thermo-physical properties of a freestanding sheet of graphene (thermal diffusivity and thermal conductivity), and their dependence on sample density as result of uniform mechanical compression. Thermal diffusivity of graphene nano-platelets (thin slabs) was measured by the pulse flash method. Obtained response data were processed with a specifically developed least square data processing algorithm. GNP specific heat was assumed from literature and thermal conductivity derived from thermal diffusivity, specific heat and density. Obtained results show a significant difference with respect to other porous media: the thermal diffusivity decreases as the density increases, while thermal conductivity increases for low and high densities, and remain fairly constant for the intermediate range. This can be explained by the very high thermal conductivity values reached by the nano-layers of graphene and the peculiar arrangement of platelets during the compression applied to the samples to get the desired density. Due to very high thermal conductivity of graphene layers, the obtained results show that thermal conductivity of conglomerates increases when there is an air reduction due to compression, and consequent density increases, with the number of contact points between platelets also increased. In the intermediate range (250 ≤ ρ ≤ 700 kg.m-3) the folding of platelets reduces density, without increasing the contact points of platelets, so thermal conductivity can slightly decrease.

Misfit layered Ca{sub 3}Co{sub 4}O{sub 9} as a high figure of merit p-type transparent conducting oxide film through solution processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aksit, M.; Kolli, S. K.; Slauch, I. M.

Ca{sub 3}Co{sub 4}O{sub 9} thin films synthesized through solution processing are shown to be high-performing, p-type transparent conducting oxides (TCOs). The synthesis method is a cost-effective and scalable process that consists of sol-gel chemistry, spin coating, and heat treatments. The process parameters can be varied to produce TCO thin films with sheet resistance as low as 5.7 kΩ/sq (ρ ≈ 57 mΩ cm) or with average visible range transparency as high as 67%. The most conductive Ca{sub 3}Co{sub 4}O{sub 9} TCO thin film has near infrared region optical transmission as high as 85%. The figure of merit (FOM) for the top-performing Ca{sub 3}Co{submore » 4}O{sub 9} thin film (151 MΩ{sup −1}) is higher than FOM values reported in the literature for all other solution processed, p-type TCO thin films and higher than most others prepared by physical vapor deposition and chemical vapor deposition. Transparent conductivity in misfit layered oxides presents new opportunities for TCO compositions.« less

Hierarchical self-assembly of hexagonal single-crystal nanosheets into 3D layered superlattices with high conductivity

NASA Astrophysics Data System (ADS)

Tao, Yulun; Shen, Yuhua; Yang, Liangbao; Han, Bin; Huang, Fangzhi; Li, Shikuo; Chu, Zhuwang; Xie, Anjian

2012-05-01

While the number of man-made nano superstructures realized by self-assembly is growing in recent years, assemblies of conductive polymer nanocrystals, especially for superlattices, are still a significant challenge, not only because of the simplicity of the shape of the nanocrystal building blocks and their interactions, but also because of the poor control over these parameters in the fabrication of more elaborate nanocrystals. Here, we firstly report a facile and general route to a new generation of 3D layered superlattices of polyaniline doped with CSA (PANI-CSA) and show how PANI crystallize and self-assemble, in a suitable single solution environment. In cyclohexane, 1D amorphous nanofibers transformed to 1D nanorods as building blocks, and then to 2D single-crystal nanosheets with a hexagonal phase, and lastly to 3D ordered layered superlattices with the narrowest polydispersity value (Mw/Mn = 1.47). Remarkably, all the instructions for the hierarchical self-assembly are encoded in the layered shape in other non-polar solvents (hexane, octane) and their conductivity in the π-π stacking direction is improved to about 50 S cm-1, which is even higher than that of the highest previously reported value (16 S cm-1). The method used in this study is greatly expected to be readily scalable to produce superlattices of conductive polymers with high quality and low cost.While the number of man-made nano superstructures realized by self-assembly is growing in recent years, assemblies of conductive polymer nanocrystals, especially for superlattices, are still a significant challenge, not only because of the simplicity of the shape of the nanocrystal building blocks and their interactions, but also because of the poor control over these parameters in the fabrication of more elaborate nanocrystals. Here, we firstly report a facile and general route to a new generation of 3D layered superlattices of polyaniline doped with CSA (PANI-CSA) and show how PANI crystallize and self-assemble, in a suitable single solution environment. In cyclohexane, 1D amorphous nanofibers transformed to 1D nanorods as building blocks, and then to 2D single-crystal nanosheets with a hexagonal phase, and lastly to 3D ordered layered superlattices with the narrowest polydispersity value (Mw/Mn = 1.47). Remarkably, all the instructions for the hierarchical self-assembly are encoded in the layered shape in other non-polar solvents (hexane, octane) and their conductivity in the π-π stacking direction is improved to about 50 S cm-1, which is even higher than that of the highest previously reported value (16 S cm-1). The method used in this study is greatly expected to be readily scalable to produce superlattices of conductive polymers with high quality and low cost. Electronic supplementary information (ESI) available: SEM, and TEM images. See DOI: 10.1039/c2nr30743j

2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakes

PubMed Central

Chiatti, Olivio; Riha, Christian; Lawrenz, Dominic; Busch, Marco; Dusari, Srujana; Sánchez-Barriga, Jaime; Mogilatenko, Anna; Yashina, Lada V.; Valencia, Sergio; Ünal, Akin A.; Rader, Oliver; Fischer, Saskia F.

2016-01-01

Low-field magnetotransport measurements of topological insulators such as Bi2Se3 are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities (∼1019 cm−3) were reported, which can be related to additional two-dimensional layered conductivity, hampering the identification of the topological surface states. Here, we report that quantum corrections to the electronic conduction are dominated by the surface states for a semiconducting case, which can be analyzed by the Hikami-Larkin-Nagaoka model for two coupled surfaces in the case of strong spin-orbit interaction. However, in the metallic-like case this analysis fails and additional two-dimensional contributions need to be accounted for. Shubnikov-de Haas oscillations and quantized Hall resistance prove as strong indications for the two-dimensional layered metallic behavior. Temperature-dependent magnetotransport properties of high-quality Bi2Se3 single crystalline exfoliated macro and micro flakes are combined with high resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy, confirming the structure and stoichiometry. Angle-resolved photoemission spectroscopy proves a single-Dirac-cone surface state and a well-defined bulk band gap in topological insulating state. Spatially resolved core-level photoelectron microscopy demonstrates the surface stability. PMID:27270569

Transparent Conductive Nanofiber Paper for Foldable Solar Cells

PubMed Central

Nogi, Masaya; Karakawa, Makoto; Komoda, Natsuki; Yagyu, Hitomi; Nge, Thi Thi

2015-01-01

Optically transparent nanofiber paper containing silver nanowires showed high electrical conductivity and maintained the high transparency, and low weight of the original transparent nanofiber paper. We demonstrated some procedures of optically transparent and electrically conductive cellulose nanofiber paper for lightweight and portable electronic devices. The nanofiber paper enhanced high conductivity without any post treatments such as heating or mechanical pressing, when cellulose nanofiber dispersions were dropped on a silver nanowire thin layer. The transparent conductive nanofiber paper showed high electrical durability in repeated folding tests, due to dual advantages of the hydrophilic affinity between cellulose and silver nanowires, and the entanglement between cellulose nanofibers and silver nanowires. Their optical transparency and electrical conductivity were as high as those of ITO glass. Therefore, using this conductive transparent paper, organic solar cells were produced that achieved a power conversion of 3.2%, which was as high as that of ITO-based solar cells. PMID:26607742

High-Performance Screen-Printed Thermoelectric Films on Fabrics

DOE PAGES

Shin, Sunmi; Kumar, Rajan; Roh, Jong Wook; ...

2017-08-04

Printing techniques could offer a scalable approach to fabricate thermoelectric (TE) devices on flexible substrates for power generation used in wearable devices and personalized thermo-regulation. However, typical printing processes need a large concentration of binder additives, which often render a detrimental effect on electrical transport of the printed TE layers. Here, we report scalable screenprinting of TE layers on flexible fiber glass fabrics, by rationally optimizing the printing inks consisting of TE particles (p-type Bi 0.5Sb 1.5Te 3 or n-type Bi 2Te 2.7Se 0.3), binders, and organic solvents. We identified a suitable binder additive, methyl cellulose, which offers suitable viscositymore » for printability at a very small concentration (0.45–0.60 wt.%), thus minimizing its negative impact on electrical transport. Following printing, the binders were subsequently burnt off via sintering and hot pressing. We found that the nanoscale defects left behind after the binder burnt off became effective phonon scattering centers, leading to low lattice thermal conductivity in the printed n-type material. With the high electrical conductivity and low thermal conductivity, the screen-printed TE layers showed high room-temperature ZT values of 0.65 and 0.81 for p-type and n-type, respectively.« less

High-Performance Screen-Printed Thermoelectric Films on Fabrics.

PubMed

Shin, Sunmi; Kumar, Rajan; Roh, Jong Wook; Ko, Dong-Su; Kim, Hyun-Sik; Kim, Sang Il; Yin, Lu; Schlossberg, Sarah M; Cui, Shuang; You, Jung-Min; Kwon, Soonshin; Zheng, Jianlin; Wang, Joseph; Chen, Renkun

2017-08-04

Printing techniques could offer a scalable approach to fabricate thermoelectric (TE) devices on flexible substrates for power generation used in wearable devices and personalized thermo-regulation. However, typical printing processes need a large concentration of binder additives, which often render a detrimental effect on electrical transport of the printed TE layers. Here, we report scalable screen-printing of TE layers on flexible fiber glass fabrics, by rationally optimizing the printing inks consisting of TE particles (p-type Bi 0.5 Sb 1.5 Te 3 or n-type Bi 2 Te 2.7 Se 0.3 ), binders, and organic solvents. We identified a suitable binder additive, methyl cellulose, which offers suitable viscosity for printability at a very small concentration (0.45-0.60 wt.%), thus minimizing its negative impact on electrical transport. Following printing, the binders were subsequently burnt off via sintering and hot pressing. We found that the nanoscale defects left behind after the binder burnt off became effective phonon scattering centers, leading to low lattice thermal conductivity in the printed n-type material. With the high electrical conductivity and low thermal conductivity, the screen-printed TE layers showed high room-temperature ZT values of 0.65 and 0.81 for p-type and n-type, respectively.

High-Performance Screen-Printed Thermoelectric Films on Fabrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Sunmi; Kumar, Rajan; Roh, Jong Wook

Printing techniques could offer a scalable approach to fabricate thermoelectric (TE) devices on flexible substrates for power generation used in wearable devices and personalized thermo-regulation. However, typical printing processes need a large concentration of binder additives, which often render a detrimental effect on electrical transport of the printed TE layers. Here, we report scalable screenprinting of TE layers on flexible fiber glass fabrics, by rationally optimizing the printing inks consisting of TE particles (p-type Bi 0.5Sb 1.5Te 3 or n-type Bi 2Te 2.7Se 0.3), binders, and organic solvents. We identified a suitable binder additive, methyl cellulose, which offers suitable viscositymore » for printability at a very small concentration (0.45–0.60 wt.%), thus minimizing its negative impact on electrical transport. Following printing, the binders were subsequently burnt off via sintering and hot pressing. We found that the nanoscale defects left behind after the binder burnt off became effective phonon scattering centers, leading to low lattice thermal conductivity in the printed n-type material. With the high electrical conductivity and low thermal conductivity, the screen-printed TE layers showed high room-temperature ZT values of 0.65 and 0.81 for p-type and n-type, respectively.« less

Photovoltaic device having light transmitting electrically conductive stacked films

DOEpatents

Weber, Michael F.; Tran, Nang T.; Jeffrey, Frank R.; Gilbert, James R.; Aspen, Frank E.

1990-07-10

A light transmitting electrically conductive stacked film, useful as a light transmitting electrode, including a first light transmitting electrically conductive layer, having a first optical thickness, a second light transmitting layer, having a second optical thickness different from the optical thickness of the first layer, and an electrically conductive metallic layer interposed between and in initimate contact with the first and second layers.

A model for the scattering of high-frequency electromagnetic fields from dielectrics exhibiting thermally-activated electrical losses

NASA Technical Reports Server (NTRS)

Hann, Raiford E.

1991-01-01

An equivalent circuit model (ECM) approach is used to predict the scattering behavior of temperature-activated, electrically lossy dielectric layers. The total electrical response of the dielectric (relaxation + conductive) is given by the ECM and used in combination with transmission line theory to compute reflectance spectra for a Dallenbach layer configuration. The effects of thermally-activated relaxation processes on the scattering properties is discussed. Also, the effect of relaxation and conduction activation energy on the electrical properties of the dielectric is described.

Stretching-induced wrinkling in plastic-rubber composites.

PubMed

Yang, Junyu; Damle, Sameer; Maiti, Spandan; Velankar, Sachin S

2017-01-25

We examine the mechanics of three-layer composite films composed of an elastomeric layer sandwiched between two thin surface layers of plastic. Upon stretching and releasing such composite films, they develop a highly wrinkled surface texture. The mechanism for this texturing is that during stretching, the plastic layers yield and stretch irreversibly whereas the elastomer stretches reversibly. Thus upon releasing, the plastic layers buckle due to compressive stress imposed by the elastomer. Experiments are conducted using SEPS elastomer and 50 micron thick LLDPE plastic films. Stretching and releasing the composites to 2-5 times their original length induces buckles with wavelength on the order of 200 microns, and the wavelength decreases as the stretching increases. FEM simulations reveal that plastic deformation is involved at all stages during this process: (1) during stretching, the plastic layer yields in tension; (2) during recovery, the plastic layer first yields in-plane in compression and then buckles; (3) post-buckling, plastic hinges are formed at high-curvature regions. Homogeneous wrinkles are predicted only within a finite window of material properties: if the yield stress is too low, the plastic layers yield in-plane, without wrinkling, whereas if the yield stress is too high, non-homogeneous wrinkles are predicted. This approach to realizing highly wrinkled textures offers several advantages, most importantly the fact that high aspect ratio wrinkles (amplitude to wavelength ratios exceeding 0.4) can be realized.

Electrically pumped edge-emitting photonic bandgap semiconductor laser

DOEpatents

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

Estimation on the self recovery behavior of low-conductivity layer in landfill final cover by laboratory conductivity tests.

PubMed

Kwon, O; Park, J

2006-11-01

This study examined the application of a Self Recovering Sustainable Layer (SRSL) as a landfill final cover. Low-conductivity layers in landfill covers are known to have problems associated with cracking as a result of the differential settlement or climatic changes. A SRSL is defined as a layer with chemical properties that reduces the increased hydraulic conductivity resulting from cracking by forming low-conductivity precipitates of chemicals contained in the layer. In this study, the formation of precipitates was confirmed using a batch test, spectroscopic analysis and mineralogical speciation tests. The possibility of secondary contamination due to the chemicals used for recovery was evaluated using a leaching test. A laboratory conductivity test was performed on a single layer composed of each chemical as well as on a 2-layer system. The recovery performance of the SRSL was estimated by developing artificial cracks in the specimens and observing the change in hydraulic conductivity as a function of time. In the laboratory conductivity test, the hydraulic conductivity of a 2-layer system as well as those of the individual layers that comprise the 2-layer system was estimated. In addition sodium ash was found to enhance the reduction in conductivity. A significant increase in conductivity was observed after the cracks developed but this was reduced with time, which indicated that the SRSL has a proper recovering performance. In conclusion, a SRSL can be used as a landfill final cover that could maintain low-conductivity even after the serious damages due to settlement.

Co-Percolating Graphene-Wrapped Silver Nanowire Network for High Performance, Highly Stable, Transparent Conducting Electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Ruiyi; Das, Suprem R.; Jeong, Changwook

Transparent conducting electrodes (TCEs) require high transparency and low sheet resistance for applications in photovoltaics, photodetectors, flat panel displays, touch screen devices and imagers. Indium tin oxide (ITO), or other transparent conductive oxides, have typically been used, and provide a baseline sheet resistance (RS) vs. transparency (T) relationship. However, ITO is relatively expensive (due to limited abundance of Indium), brittle, unstable, and inflexible; moreover, ITO transparency drops rapidly for wavelengths above 1000 nm. Motivated by a need for transparent conductors with comparable (or better) RS at a given T, as well as flexible structures, several alternative material systems have beenmore » investigated. Single-layer graphene (SLG) or few-layer graphene provide sufficiently high transparency (≈97% per layer) to be a potential replacement for ITO. However, large-area synthesis approaches, including chemical vapor deposition (CVD), typically yield films with relatively high sheet resistance due to small grain sizes and high-resistance grain boundaries (HGBs). In this paper, we report a hybrid structure employing a CVD SLG film and a network of silver nanowires (AgNWs): RS as low as 22 Ω/ (stabilized to 13 Ω/ after 4 months) have been observed at high transparency (88% at λ = 550 nm) in hybrid structures employing relatively low-cost commercial graphene with a starting RS of 770 Ω/. This sheet resistance is superior to typical reported values for ITO, comparable to the best reported TCEs employing graphene and/or random nanowire networks, and the film properties exhibit impressive stability under mechanical pressure, mechanical bending and over time. The design is inspired by the theory of a co-percolating network where conduction bottlenecks of a 2D film (e.g., SLG, MoS2) are circumvented by a 1D network (e.g., AgNWs, CNTs) and vice versa. The development of these high-performance hybrid structures provides a route towards robust, scalable and low-cost approaches for realizing high-performance TCE.« less

Low temperature reduction of free-standing graphene oxide papers with metal iodides for ultrahigh bulk conductivity.

PubMed

Liu, Chenyang; Hao, Feng; Zhao, Xiaochong; Zhao, Qiancheng; Luo, Songping; Lin, Hong

2014-02-05

Here we report a green and facile route for highly efficient reduction of free-standing graphene oxide (GO) papers with metal iodide aqueous solutions at low cost. The metal iodides (MgI2, AlI3, ZnI2, FeI2) were synthesized directly from metal and iodine powder with water as a catalyzer. An extremely high bulk conductivity of 55088 S/m for reduced graphene oxide (rGO) papers were obtained with FeI2 solution of which pH = 0 at 95°C for 6 hours. The catalytic effect of strong Lewis acid for the promotion of the nucleophilic substitution reaction is responsible for the greatly improved bulk conductivity. Furthermore, it was found that the layer-to-layer distance (dL) and the crystallinity of the rGO papers are regarded as two main factors affecting the bulk conductivity rather than C/O ratio and defect concentration.

Fundamental phenomena on fuel decomposition and boundary layer combustion processes with applications to hybrid rocket motors

NASA Technical Reports Server (NTRS)

Kuo, Kenneth K.; Lu, Y. C.; Chiaverini, Martin J.; Harting, George C.

1994-01-01

An experimental study on the fundamental processes involved in fuel decomposition and boundary layer combustion in hybrid rocket motors is being conducted at the High Pressure Combustion Laboratory of the Pennsylvania State University. This research should provide an engineering technology base for development of large scale hybrid rocket motors as well as a fundamental understanding of the complex processes involved in hybrid propulsion. A high pressure slab motor has been designed for conducting experimental investigations. Oxidizer (LOX or GOX) is injected through the head-end over a solid fuel (HTPB) surface. Experiments using fuels supplied by NASA designated industrial companies will also be conducted. The study focuses on the following areas: measurement and observation of solid fuel burning with LOX or GOX, correlation of solid fuel regression rate with operating conditions, measurement of flame temperature and radical species concentrations, determination of the solid fuel subsurface temperature profile, and utilization of experimental data for validation of a companion theoretical study also being conducted at PSU.

Printable polymer actuators from ionic liquid, soluble polyimide, and ubiquitous carbon materials.

PubMed

Imaizumi, Satoru; Ohtsuki, Yuto; Yasuda, Tomohiro; Kokubo, Hisashi; Watanabe, Masayoshi

2013-07-10

We present here printable high-performance polymer actuators comprising ionic liquid (IL), soluble polyimide, and ubiquitous carbon materials. Polymer electrolytes with high ionic conductivity and reliable mechanical strength are required for high-performance polymer actuators. The developed polymer electrolytes comprised a soluble sulfonated polyimide (SPI) and IL, 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)amide ([C2mim][NTf2]), and they exhibited acceptable ionic conductivity up to 1 × 10(-3) S cm(-1) and favorable mechanical properties (elastic modulus >1 × 10(7) Pa). Polymer actuators based on SPI/[C2mim][NTf2] electrolytes were prepared using inexpensive activated carbon (AC) together with highly electron-conducting carbon such as acetylene black (AB), vapor grown carbon fiber (VGCF), and Ketjen black (KB). The resulting polymer actuators have a trilaminar electric double-layer capacitor structure, consisting of a polymer electrolyte layer sandwiched between carbon electrode layers. Displacement, response speed, and durability of the actuators depended on the combination of carbons. Especially the actuators with mixed AC/KB carbon electrodes exhibited relatively large displacement and high-speed response, and they kept 80% of the initial displacement even after more than 5000 cycles. The generated force of the actuators correlated with the elastic modulus of SPI/[C2mim][NTf2] electrolytes. The displacement of the actuators was proportional to the accumulated electric charge in the electrodes, regardless of carbon materials, and agreed well with the previously proposed displacement model.

A three-layer PMMA electrophoresis microchip with Pt microelectrodes insulated by a thin film for contactless conductivity detection.

PubMed

Liu, Junshan; Wang, Junyao; Chen, Zuanguang; Yu, Yong; Yang, Xiujuan; Zhang, Xianbin; Xu, Zheng; Liu, Chong

2011-03-07

A three-layer poly (methyl methacrylate) (PMMA) electrophoresis microchip integrated with Pt microelectrodes for contactless conductivity detection is presented. A 50 μm-thick PMMA film is used as the insulating layer and placed between the channel plate (containing the microchannel) and the electrode plate (containing the microelectrode). The three-layer structure facilitates the achievement of a thin insulating layer, obviates the difficulty of integrating microelectrodes on a thin film, and does not compromise the integration of microchips. To overcome the thermal and chemical incompatibilities of polymers and photolithographic techniques, a modified lift-off process was developed to integrate Pt microelectrodes onto the PMMA substrate. A novel two-step bonding method was created to assemble the complete PMMA microchip. A low limit of detection of 1.25 μg ml(-1) for Na(+) and high separation efficiency of 77,000 and 48,000 plates/m for Na(+) and K(+) were obtained when operating the detector at a low excitation frequency of 60 kHz.

Optimization of figure of merit in magnetoplasmonic waveguides with Fe/Au multilayer for optical isolator based on nonreciprocal coupling on Si waveguides

NASA Astrophysics Data System (ADS)

Shimizu, Hiromasa; Shimodaira, Takahiro

2018-04-01

We report on magnetoplasmonic Si waveguides with a ferromagnetic Fe/conductive metal Au multilayer for realizing a sizable magnetooptic effect with a low propagation loss for integrated optical isolators. By combining the ferromagnetic metal Fe with a highly conductive Au layer, the largest nonreciprocal differences in effective index were estimated for propagation lengths of 1-20 µm. Mode analysis with and without a Au layer clarified that the insertion of a Au layer on an Fe layer improves the optical confinement in the Fe layer with reduced propagation loss and is effective in enlarging the magnetooptic effect for the same propagation length. On the basis of the optimized Fe/Au multilayer structure, we designed waveguide optical isolators based on nonreciprocal coupling by the finite difference time domain (FDTD) method. We estimated an optical isolation of 10.8 dB with a forward insertion loss of 13.4 dB in a 34-µm-long nonreciprocal directional coupler.

Evaluation of Flush-Mounted, S-Duct Inlets with Large Amounts of Boundary Layer Ingestion

NASA Technical Reports Server (NTRS)

Berrier, Bobby L.; Morehouse, Melissa B.

2003-01-01

A new high Reynolds number test capability for boundary layer ingesting inlets has been developed for the NASA Langley Research Center 0.3-Meter Transonic Cryogenic Tunnel. Using this new capability, an experimental investigation of four S-duct inlet configurations with large amounts of boundary layer ingestion (nominal boundary layer thickness of about 40% of inlet height) was conducted at realistic operating conditions (high subsonic Mach numbers and full-scale Reynolds numbers). The objectives of this investigation were to 1) provide a database for CFD tool validation on boundary layer ingesting inlets operating at realistic conditions and 2) provide a baseline inlet for future inlet flow-control studies. Tests were conducted at Mach numbers from 0.25 to 0.83, Reynolds numbers (based on duct exit diameter) from 5.1 million to a full-scale value of 13.9 million, and inlet mass-flow ratios from 0.39 to 1.58 depending on Mach number. Results of this investigation indicate that inlet pressure recovery generally decreased and inlet distortion generally increased with increasing Mach number. Except at low Mach numbers, increasing inlet mass-flow increased pressure recovery and increased distortion. Increasing the amount of boundary layer ingestion (by decreasing inlet throat height) or ingesting a boundary layer with a distorted (adverse) profile decreased pressure recovery and increased distortion. Finally, increasing Reynolds number had almost no effect on inlet distortion but increased inlet recovery by about one-half percent at a Mach number near cruise.

Magnetic-sensor performance evaluated from magneto-conductance curve in magnetic tunnel junctions using in-plane or perpendicularly magnetized synthetic antiferromagnetic reference layers

NASA Astrophysics Data System (ADS)

Nakano, T.; Oogane, M.; Furuichi, T.; Ando, Y.

2018-04-01

The automotive industry requires magnetic sensors exhibiting highly linear output within a dynamic range as wide as ±1 kOe. A simple model predicts that the magneto-conductance (G-H) curve in a magnetic tunnel junction (MTJ) is perfectly linear, whereas the magneto-resistance (R-H) curve inevitably contains a finite nonlinearity. We prepared two kinds of MTJs using in-plane or perpendicularly magnetized synthetic antiferromagnetic (i-SAF or p-SAF) reference layers and investigated their sensor performance. In the MTJ with the i-SAF reference layer, the G-H curve did not necessarily show smaller nonlinearities than those of the R-H curve with different dynamic ranges. This is because the magnetizations of the i-SAF reference layer start to rotate at a magnetic field even smaller than the switching field (Hsw) measured by a magnetometer, which significantly affects the tunnel magnetoresistance (TMR) effect. In the MTJ with the p-SAF reference layer, the G-H curve showed much smaller nonlinearities than those of the R-H curve, thanks to a large Hsw value of the p-SAF reference layer. We achieved a nonlinearity of 0.08% FS (full scale) in the G-H curve with a dynamic range of ±1 kOe, satisfying our target for automotive applications. This demonstrated that a reference layer exhibiting a large Hsw value is indispensable in order to achieve a highly linear G-H curve.

Probing the role of interlayer coupling and coulomb interactions on electronic structure in few-layer MoSe₂ nanostructures.

PubMed

Bradley, Aaron J; Ugeda, Miguel M; da Jornada, Felipe H; Qiu, Diana Y; Ruan, Wei; Zhang, Yi; Wickenburg, Sebastian; Riss, Alexander; Lu, Jiong; Mo, Sung-Kwan; Hussain, Zahid; Shen, Zhi-Xun; Louie, Steven G; Crommie, Michael F

2015-04-08

Despite the weak nature of interlayer forces in transition metal dichalcogenide (TMD) materials, their properties are highly dependent on the number of layers in the few-layer two-dimensional (2D) limit. Here, we present a combined scanning tunneling microscopy/spectroscopy and GW theoretical study of the electronic structure of high quality single- and few-layer MoSe2 grown on bilayer graphene. We find that the electronic (quasiparticle) bandgap, a fundamental parameter for transport and optical phenomena, decreases by nearly one electronvolt when going from one layer to three due to interlayer coupling and screening effects. Our results paint a clear picture of the evolution of the electronic wave function hybridization in the valleys of both the valence and conduction bands as the number of layers is changed. This demonstrates the importance of layer number and electron-electron interactions on van der Waals heterostructures and helps to clarify how their electronic properties might be tuned in future 2D nanodevices.

PLZT capacitor and method to increase the dielectric constant

DOEpatents

Taylor, Ralph S.; Fairchild, Manuel Ray; Balachjandran, Uthamalingam; Lee, Tae H.

2017-12-12

A ceramic-capacitor includes a first electrically-conductive-layer, a second electrically-conductive-layer arranged proximate to the first electrically-conductive-layer, and a dielectric-layer interposed between the first electrically-conductive-layer and the second electrically-conductive-layer. The dielectric-layer is formed of a lead-lanthanum-zirconium-titanate material (PLZT), wherein the PLZT is characterized by a dielectric-constant greater than 125, when measured at 25 degrees Celsius and zero Volts bias, and an excitation frequency of ten-thousand Hertz (10 kHz). A method for increasing a dielectric constant of the lead-lanthanum-zirconium-titanate material (PLZT) includes the steps of depositing PLZT to form a dielectric-layer of a ceramic-capacitor, and heating the ceramic-capacitor to a temperature not greater than 300.degree. C.

Electrodes mitigating effects of defects in organic electronic devices

DOEpatents

Heller, Christian Maria Anton [Albany, NY

2008-05-06

A compound electrode for organic electronic devices comprises a thin first layer of a first electrically conducting material and a second electrically conducting material disposed on the first layer. In one embodiment, the second electrically conducting material is formed into a plurality of elongated members. In another embodiment, the second material is formed into a second layer. The elongated members or the second layer has a thickness greater than that of the first layer. The second layer is separated from the first layer by a conducting material having conductivity less than at least the material of the first layer. The compound electrode is capable of mitigating adverse effects of defects, such as short circuits, in the construction of the organic electronic devices, and can be included in light-emitting or photovoltaic devices.

Features of electronic and lattice mechanisms of transboundary heat transfer in multilayer nanolaminate TiAlN/Ag coatings.

PubMed

Kovalev, A I; Wainstein, D L; Vakhrushev, V O; Gago, R; Soldera, F; Endrino, J L; Fox-Rabinovich, G S; Veldhuis, S

2017-12-06

Plasmon resonance heterogeneities were identified and studied along Ag and TiAlN layers within a multilayer stack in nanolaminate TiAlN/Ag coatings. For this purpose, a high-resolution plasmon microscopy was used. The plasmons intensity, energy, and depth of interface plasmon-polariton penetration were studied by scanning reflected electron energy loss spectroscopy. The heat conductivity of such metal-insulator-metal (MIM) nanolaminate coatings was measured by laser reflectometry. Dependencies of thermal conductivity coefficient of coatings, MIM interfaces, and resistivity of Ag layers as a function of the Ag-TiAlN bilayer thickness were calculated on the basis of experimental data. The contribution of plasmon resonance confinement to the abnormal lower thermal conductivity in the MIM metamaterial with Ag layer thickness below 25 nm is discussed. In particular, the results highlight the relevant role of different heat transfer mechanisms between MI and IM interfaces: asymmetry of plasmon-polariton interactions on upper and lower boundaries of Ag layer and asymmetry of LA and TA phonons propagation through interfaces.

Optical response of nanostructured metal/dielectric composites and multilayers

NASA Astrophysics Data System (ADS)

Smith, Geoffrey B.; Maaroof, Abbas I.; Allan, Rodney S.; Schelm, Stefan; Anstis, Geoffrey R.; Cortie, Michael B.

2004-08-01

The homogeneous optical response in conducting nanostructured layers, and in insulating layers containing dense arrays of self assembled conducting nanoparticles separated by organic linkers, is examined experimentally through their effective complex indices (n*, k*). Classical effective medium models, modified to account for the 3-phase nanostructure, are shown to explain (n*, k*) in dense particulate systems but not inhomogeneous layers with macroscopic conductance for which a different approach to homogenisation is discussed. (n*, k*) data on thin granular metal films, thin mesoporous gold, and on thin metal layers containing ordered arrays of voids, is linked to properties of the surface plasmon states which span the nanostructured film. Coupling between evanescent waves at either surface counterbalanced by electron scattering losses must be considered. Virtual bound states for resonant photons result, with the associated transit delay leading to a large rise in n* in many nanostructures. Overcoating n-Ag with alumina is shown to alter (n*, k*) through its impact on the SP coupling. In contrast to classical optical homogenisation, effective indices depend on film thickness. Supporting high resolution SEM images are presented.

Sulfiphilic nickel phosphosulfide enabled Li 2S impregnation in 3D graphene cages for Li-S batteries

DOE PAGES

Zhou, Guangmin; Sun, Jie; Jin, Yang; ...

2017-01-30

A 3D graphene cage with a thin layer of electrodeposited nickel phosphosulfide for Li 2S impregnation, using ternary nickel phosphosulphide as a highly conductive coating layer for stabilized polysulfide chemistry, is accomplished by the combination of theoretical and experimental studies. As a result, the 3D interconnected graphene cage structure leads to high capacity, good rate capability and excellent cycling stability in a Li 2S cathode.

Hypersonic Boundary Layer Stability over a Flared Cone in a Quiet Tunnel

NASA Technical Reports Server (NTRS)

Lachowicz, Jason T.; Chokani, Ndaona; Wilkinson, Stephen P.

1996-01-01

Hypersonic boundary layer measurements were conducted over a flared cone in a quiet wind tunnel. The flared cone was tested at a freestream unit Reynolds number of 2.82x106/ft in a Mach 6 flow. This Reynolds number provided laminar-to-transitional flow over the model in a low-disturbance environment. Point measurements with a single hot wire using a novel constant voltage anemometry system were used to measure the boundary layer disturbances. Surface temperature and schlieren measurements were also conducted to characterize the laminar-to-transitional state of the boundary layer and to identify instability modes. Results suggest that the second mode disturbances were the most unstable and scaled with the boundary layer thickness. The integrated growth rates of the second mode compared well with linear stability theory in the linear stability regime. The second mode is responsible for transition onset despite the existence of a second mode sub-harmonic. The sub-harmonic wavelength also scales with the boundary layer thickness. Furthermore, the existence of higher harmonics of the fundamental suggests that non-linear disturbances are not associated with high free stream disturbance levels.

Refractory lining system for high wear area of high temperature reaction vessel

DOEpatents

Hubble, D.H.; Ulrich, K.H.

1998-04-21

A refractory-lined high temperature reaction vessel comprises a refractory ring lining constructed of refractory brick, a cooler, and a heat transfer medium disposed between the refractory ring lining and the cooler. The refractory brick comprises magnesia (MgO) and graphite. The heat transfer medium contacts the refractory brick and a cooling surface of the cooler, and is composed of a material that accommodates relative movement between the refractory brick and the cooler. The brick is manufactured such that the graphite has an orientation providing a high thermal conductivity in the lengthwise direction through the brick that is higher than the thermal conductivity in directions perpendicular to the lengthwise direction. The graphite preferably is flake graphite, in the range of about 10 to 20 wt %, and has a size distribution selected to provide maximum brick density. The reaction vessel may be used for performing a reaction process including the steps of forming a layer of slag on a melt in the vessel, the slag having a softening point temperature range, and forming a protective frozen layer of slag on the interior-facing surface of the refractory lining in at least a portion of a zone where the surface contacts the layer of slag, the protective frozen layer being maintained at or about the softening point of the slag. 10 figs.

Refractory lining system for high wear area of high temperature reaction vessel

DOEpatents

Hubble, D.H.; Ulrich, K.H.

1998-09-22

A refractory-lined high temperature reaction vessel comprises a refractory ring lining constructed of refractory brick, a cooler, and a heat transfer medium disposed between the refractory ring lining and the cooler. The refractory brick comprises magnesia (MgO) and graphite. The heat transfer medium contacts the refractory brick and a cooling surface of the cooler, and is composed of a material that accommodates relative movement between the refractory brick and the cooler. The brick is manufactured such that the graphite has an orientation providing a high thermal conductivity in the lengthwise direction through the brick that is higher than the thermal conductivity in directions perpendicular to the lengthwise direction. The graphite preferably is flake graphite, in the range of about 10 to 20 wt %, and has a size distribution selected to provide maximum brick density. The reaction vessel may be used for performing a reaction process including the steps of forming a layer of slag on a melt in the vessel, the slag having a softening point temperature range, and forming a protective frozen layer of slag on the interior-facing surface of the refractory lining in at least a portion of a zone where the surface contacts the layer of slag, the protective frozen layer being maintained at or about the softening point of the slag. 10 figs.

Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures

NASA Astrophysics Data System (ADS)

Fukuda, Masahiro; Watanabe, Kazuhiro; Sakashita, Mitsuo; Kurosawa, Masashi; Nakatsuka, Osamu; Zaima, Shigeaki

2017-10-01

The energy band alignment of Ge1-xSnx/Ge1-x-ySixSny heterostructures was investigated, and control of the valence band offset at the Ge1-xSnx/Ge1-x-ySixSny heterointerface was achieved by controlling the Si and Sn contents in the Ge1-x-ySixSny layer. The valence band offset in the Ge0.902Sn0.098/Ge0.41Si0.50Sn0.09 heterostructure was evaluated to be as high as 330 meV, and its conduction band offset was estimated to be 150 meV by considering the energy bandgap calculated from the theoretical prediction. In addition, the formation of the strain-relaxed Ge1-x-ySixSny layer was examined and the crystalline structure was characterized. The epitaxial growth of a strain-relaxed Ge0.64Si0.21Sn0.15 layer with the degree of strain relaxation of 55% was examined using a virtual Ge substrate. Moreover, enhancement of the strain relaxation was demonstrated by post-deposition annealing, where a degree of strain relaxation of 70% was achieved after annealing at 400 °C. These results indicate the possibility for enhancing the indirect-direct crossover with a strained and high-Sn-content Ge1-xSnx layer on a strain-relaxed Ge1-x-ySixSny layer, realizing preferable carrier confinement by type-I energy band alignment with high conduction and valence band offsets.

Highly stretchable strain sensor based on polyurethane substrate using hydrogen bond-assisted laminated structure for monitoring of tiny human motions

NASA Astrophysics Data System (ADS)

Huang, Ying; Zhao, Yunong; Wang, Yang; Guo, Xiaohui; Zhang, Yangyang; Liu, Ping; Liu, Caixia; Zhang, Yugang

2018-03-01

Strain sensors used as flexible and wearable electronic devices have improved prospects in the fields of artificial skin, robotics, human-machine interfaces, and healthcare. This work introduces a highly stretchable fiber-based strain sensor with a laminated structure made up of a graphene nanoplatelet layer and a carbon black/single-walled carbon nanotube synergetic conductive network layer. An ultrathin, flexible, and elastic two-layer polyurethane (PU) yarn substrate was successively deposited by a novel chemical bonding-based layered dip-coating process. These strain sensors demonstrated high stretchability (˜350%), little hysteresis, and long-term durability (over 2400 cycles) due to the favorable tensile properties of the PU substrate. The linearity of the strain sensor could reach an adjusted R-squared of 0.990 at 100% strain, which is better than most of the recently reported strain sensors. Meanwhile, the strain sensor exhibited good sensibility, rapid response, and a lower detection limit. The lower detection limit benefited from the hydrogen bond-assisted laminated structure and continuous conductive path. Finally, a series of experiments were carried out based on the special features of the PU strain sensor to show its capacity of detecting and monitoring tiny human motions.

Electronic transport properties of Ti-impurity band in Si

NASA Astrophysics Data System (ADS)

Olea, J.; González-Díaz, G.; Pastor, D.; Mártil, I.

2009-04-01

In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminated conductivity at the implanted layer and a temperature dependent decoupling between the Ti implanted layer (TIL) and the substrate. The conduction mechanism from the TIL to the substrate shows blocking characteristics that could be well explained through IB theory. Using the ATLAS code we can estimate the energetic position of the IB at 0.36 eV from the conduction band, the density of holes in this band which is closely related to the Ti atomic density and the hole mobility in this band. Band diagrams of the structure at low and high temperatures are also simulated in the ATLAS framework. The simulation obtained is fully coherent with experimental results.

Towards AlN optical cladding layers for thermal management in hybrid lasers

NASA Astrophysics Data System (ADS)

Mathews, Ian; Lei, Shenghui; Nolan, Kevin; Levaufre, Guillaume; Shen, Alexandre; Duan, Guang-Hua; Corbett, Brian; Enright, Ryan

2015-06-01

Aluminium Nitride (AlN) is proposed as a dual function optical cladding and thermal spreading layer for hybrid ridge lasers, replacing current benzocyclobutene (BCB) encapsulation. A high thermal conductivity material placed in intimate contact with the Multi-Quantum Well active region of the laser allows rapid heat removal at source but places a number of constraints on material selection. AlN is considered the most suitable due to its high thermal conductivity when deposited at low deposition temperatures, similar co-efficient of thermal expansion to InP, its suitable refractive index and its dielectric nature. We have previously simulated the possible reduction in the thermal resistance of a hybrid ridge laser by replacing the BCB cladding material with a material of higher thermal conductivity of up to 319 W/mK. Towards this goal, we demonstrate AlN thin-films deposited by reactive DC magnetron sputtering on InP.

Optimization of the random multilayer structure to break the random-alloy limit of thermal conductivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yan; Gu, Chongjie; Ruan, Xiulin, E-mail: ruan@purdue.edu

2015-02-16

A low lattice thermal conductivity (κ) is desired for thermoelectrics, and a highly anisotropic κ is essential for applications such as magnetic layers for heat-assisted magnetic recording, where a high cross-plane (perpendicular to layer) κ is needed to ensure fast writing while a low in-plane κ is required to avoid interaction between adjacent bits of data. In this work, we conduct molecular dynamics simulations to investigate the κ of superlattice (SL), random multilayer (RML) and alloy, and reveal that RML can have 1–2 orders of magnitude higher anisotropy in κ than SL and alloy. We systematically explore how the κmore » of SL, RML, and alloy changes relative to each other for different bond strength, interface roughness, atomic mass, and structure size, which provides guidance for choosing materials and structural parameters to build RMLs with optimal performance for specific applications.« less

Mach 6 flowfield survey at the engine inlet of a research airplane

NASA Technical Reports Server (NTRS)

Johnson, C. B.; Lawing, P. L.

1977-01-01

A flowfield survey was conducted to better define the nature of vehicle forebody flowfield at the inlet location of an airframe-integrated scramjet engine mounted on the lower surface of a high-speed research airplane to be air launched from a B-52 and rocket boosted to Mach 6. The tests were conducted on a 1/30-scale brass model in a Mach-6 20-in. wind tunnel at Reynolds number of 11,200,000 based on distance to engine inlet. Boundary layer profiles at five spanwise locations indicate that the boundary layer in the area of the forebody centerline is more than twice as thick as the boundary layer at three outboard stations. It is shown that the cold streak found in heating contours on the centerline of the forebody is caused by a thickening of the boundary layer on the centerline, and that this thickening decreases with angle of attack.

Thermal Analysis and Design of Multi-layer Insulation for Re-entry Aerodynamic Heating

NASA Technical Reports Server (NTRS)

Daryabeigi, Kamran

2001-01-01

The combined radiation/conduction heat transfer in high-temperature multi-layer insulations was modeled using a finite volume numerical model. The numerical model was validated by comparison with steady-state effective thermal conductivity measurements, and by transient thermal tests simulating re-entry aerodynamic heating conditions. A design of experiments technique was used to investigate optimum design of multi-layer insulations for re-entry aerodynamic heating. It was found that use of 2 mm foil spacing and locating the foils near the hot boundary with the top foil 2 mm away from the hot boundary resulted in the most effective insulation design. A 76.2 mm thick multi-layer insulation using 1, 4, or 16 foils resulted in 2.9, 7.2, or 22.2 percent mass per unit area savings compared to a fibrous insulation sample at the same thickness, respectively.

Novel neural interface for implant electrodes: improving electroactivity of polypyrrole through MWNT incorporation.

PubMed

Green, R A; Williams, C M; Lovell, N H; Poole-Warren, L A

2008-04-01

Multi-walled carbon nanotubes (MWNTs) can be incorporated into conductive polymers to produce superior materials for neural interfaces with high interfacial areas, conductivity and electrochemical stability. This paper explores the addition of MWNTs to polypyrrole (PPy) through two methods, layering and codeposition. Conductivity of PPy doped with polystyrene sulfonate (PSS), a commonly used dopant, was improved by 50% when MWNTs were layered with PPy/PSS. The film electrochemical stability was improved from 38% activity to 66% activity after 400 cycles of oxidation and reduction. Growth inhibition assays indicated that MWNTs are not growth inhibitory. The electroactive polymer-MWNT composites produced demonstrate properties that suggest they are promising candidates for biomedical electrode coatings.

Thermal conductivity predictions of herringbone graphite nanofibers using molecular dynamics simulations.

PubMed

Khadem, Masoud H; Wemhoff, Aaron P

2013-02-28

Non-equilibrium molecular dynamics (NEMD) simulations are used to investigate the thermal conductivity of herringbone graphite nanofibers (GNFs) at room temperature by breaking down the axial and transverse conductivity values into intralayer and interlayer components. The optimized Tersoff potential is used to account for intralayer carbon-carbon interactions while the Lennard-Jones potential is used to model the interlayer carbon-carbon interactions. The intralayer thermal conductivity of the graphene layers near room temperature is calculated for different crease angles and number of layers using NEMD with a constant applied heat flux. The edge effect on a layer's thermal conductivity is investigated by computing the thermal conductivity values in both zigzag and armchair directions of the heat flow. The interlayer thermal conductivity is also predicted by imposing hot and cold Nosé-Hoover thermostats on two layers. The limiting case of a 90° crease angle is used to compare the results with those of single-layer graphene and few-layer graphene. The axial and transverse thermal conductivities are then calculated using standard trigonometric conversions of the calculated intralayer and interlayer thermal conductivities, along with calculations of few-layer graphene without a crease. The results show a large influence of the crease angle on the intralayer thermal conductivity, and the saturation of thermal conductivity occurs when number of layers is more than three. The axial thermal conductivity, transverse thermal conductivity in the crease direction, and transverse thermal conductivity normal to the crease for the case of a five-layer herringbone GNF with a 45° crease angle are calculated to be 27 W∕m K, 263 W∕m K, and 1500 W∕m K, respectively, where the axial thermal conductivity is in good agreement with experimental measurements.

High performance capacitors using nano-structure multilayer materials fabrication

DOEpatents

Barbee, Jr., Troy W.; Johnson, Gary W.; O'Brien, Dennis W.

1995-01-01

A high performance capacitor fabricated from nano-structure multilayer materials, such as by controlled, reactive sputtering, and having very high energy-density, high specific energy and high voltage breakdown. The multilayer capacitors, for example, may be fabricated in a "notepad" configuration composed of 200-300 alternating layers of conductive and dielectric materials so as to have a thickness of 1 mm, width of 200 mm, and length of 300 mm, with terminals at each end of the layers suitable for brazing, thereby guaranteeing low contact resistance and high durability. The "notepad" capacitors may be stacked in single or multiple rows (series-parallel banks) to increase the voltage and energy density.

High performance capacitors using nano-structure multilayer materials fabrication

DOEpatents

Barbee, Jr., Troy W.; Johnson, Gary W.; O'Brien, Dennis W.

1996-01-01

A high performance capacitor fabricated from nano-structure multilayer materials, such as by controlled, reactive sputtering, and having very high energy-density, high specific energy and high voltage breakdown. The multilayer capacitors, for example, may be fabricated in a "notepad" configuration composed of 200-300 alternating layers of conductive and dielectric materials so as to have a thickness of 1 mm, width of 200 mm, and length of 300 mm, with terminals at each end of the layers suitable for brazing, thereby guaranteeing low contact resistance and high durability. The "notepad" capacitors may be stacked in single or multiple rows (series-parallel banks) to increase the voltage and energy density.

Significant vertical phase separation in solvent-vapor-annealed poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) composite films leading to better conductivity and work function for high-performance indium tin oxide-free optoelectronics.

PubMed

Yeo, Jun-Seok; Yun, Jin-Mun; Kim, Dong-Yu; Park, Sungjun; Kim, Seok-Soon; Yoon, Myung-Han; Kim, Tae-Wook; Na, Seok-In

2012-05-01

In the present study, a novel polar-solvent vapor annealing (PSVA) was used to induce a significant structural rearrangement in poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films in order to improve their electrical conductivity and work function. The effects of polar-solvent vapor annealing on PEDOT:PSS were systematically compared with those of a conventional solvent additive method (SAM) and investigated in detail by analyzing the changes in conductivity, morphology, top and bottom surface composition, conformational PEDOT chains, and work function. The results confirmed that PSVA induces significant phase separation between excess PSS and PEDOT chains and a spontaneous formation of a highly enriched PSS layer on the top surface of the PEDOT:PSS polymer blend, which in turn leads to better 3-dimensional connections between the conducting PEDOT chains and higher work function. The resultant PSVA-treated PEDOT:PSS anode films exhibited a significantly enhanced conductivity of up to 1057 S cm(-1) and a tunable high work function of up to 5.35 eV. The PSVA-treated PEDOT:PSS films were employed as transparent anodes in polymer light-emitting diodes (PLEDs) and polymer solar cells (PSCs). The cell performances of organic optoelectronic devices with the PSVA-treated PEDOT:PSS anodes were further improved due to the significant vertical phase separation and the self-organized PSS top surface in PSVA-treated PEDOT:PSS films, which can increase the anode conductivity and work function and allow the direct formation of a functional buffer layer between the active layer and the polymeric electrode. The results of the present study will allow better use and understanding of polymeric-blend materials and will further advance the realization of high-performance indium tin oxide (ITO)-free organic electronics.

Boundary layer separation on isolated boattail nozzles. M.S. Thesis; [conducted in the Langley 16-foot transonic wind tunnel

NASA Technical Reports Server (NTRS)

Abeyounis, W. K.

1977-01-01

The phenomenon of separated flow on a series of circular-arc afterbodies was investigated using the Langley 16-foot transonic tunnel at free-stream Mach numbers from 0.40 to 0.95 at 0 deg angle of attack. Both high-pressure air and solid circular cylinders with a diameter equal to the nozzle exit diameter were used to simulate jet exhausts. A detailed data base of boundary layer separation locations was obtained using oil-flow techniques. The results indicate that boundary layer separation is most extensive on steep boattails at high Mach numbers.

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

DOEpatents

Simpson, Lin Jay

2015-07-28

Thin film electronic devices (or stacks integrated with a substrate) that include a permeation barrier formed of a thin layer of metal that provides a light transmitting and electrically conductive layer, wherein the electrical conductive layer is formed on a surface of the substrate or device layer such as a transparent conducting material layer with pin holes or defects caused by manufacturing and the thin layer of metal is deposited on the conductive layer and formed from a self-healing metal that forms self-terminating oxides. A permeation plug or block is formed in or adjacent to the thin film of metal at or proximate to the pin holes to block further permeation of contaminants through the pin holes.

LABORATORY AND FIELD RESULTS LINKING HIGH BULK CONDUCTIVITIES TO THE MICROBIAL DEGRADATION OF PETROLEUM HYDROCARBONS

EPA Science Inventory

Diesel contaminated layer (i.e. 32-45 cm) was the most geoelectrically conductive and showed the peak microbial activity. Below the saturated zone microbial enhanced mineral weathering increases the ionic concentration of pore fluids, leading to increased bulk electrical conducit...

Non-scaling behavior of electroosmotic flow in voltage-gated nanopores

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lian, Cheng; Gallegos, Alejandro; Liu, Honglai

2017-01-01

Ionic size effects and electrostatic correlations result in the non-monotonic dependence of the electrical conductivity on the pore size. For ion transport at a high gating voltage, the conductivity oscillates with the pore size due to a significant overlap of the electric double layers.

Chip connectivity verification program

NASA Technical Reports Server (NTRS)

Riley, Josh (Inventor); Patterson, George (Inventor)

1999-01-01

A method for testing electrical connectivity between conductive structures on a chip that is preferably layered with conductive and nonconductive layers. The method includes determining the layer on which each structure is located and defining the perimeter of each structure. Conductive layer connections between each of the layers are determined, and, for each structure, the points of intersection between the perimeter of that structure and the perimeter of each other structure on the chip are also determined. Finally, electrical connections between the structures are determined using the points of intersection and the conductive layer connections.

Free-standing and flexible graphene papers as disposable non-enzymatic electrochemical sensors.

PubMed

Zhang, Minwei; Halder, Arnab; Hou, Chengyi; Ulstrup, Jens; Chi, Qijin

2016-06-01

We have explored AuNPs (13 nm) both as a catalyst and as a core for synthesizing water-dispersible and highly stable core-shell structural gold@Prussian blue (Au@PB) nanoparticles (NPs). Systematic characterization by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) disclosed AuNPs coated uniformly by a 5 nm thick PB layer. Au@PB NPs were attached to single-layer graphene oxide (GO) to form Au@PB decorated GO sheets. The resulting hybrid material was filtered layer-by-layer into flexible and free-standing GO paper, which was further converted into conductive reduced GO (RGO)/Au@PB paper via hydrazine vapour reduction. High-resolution TEM images suggested that RGO papers are multiply sandwich-like structures functionalized with core-shell NPs. Resulting sandwich functionalized graphene papers have high conductivity, sufficient flexibility, and robust mechanical strength, which can be cut into free-standing electrodes. Such electrodes, used as non-enzymatic electrochemical sensors, were tested systematically for electrocatalytic sensing of hydrogen peroxide. The high performance was indicated by some of the key parameters, for example the linear H2O2 concentration response range (1-30 μM), the detection limit (100 nM), and the high amperometric sensitivity (5 A cm(-2) M(-1)). With the advantages of low cost and scalable production capacity, such graphene supported functional papers are of particular interest in the use as flexible disposable sensors. Copyright © 2016 Elsevier B.V. All rights reserved.

Two-dimensional antimonene single crystals grown by van der Waals epitaxy.

PubMed

Ji, Jianping; Song, Xiufeng; Liu, Jizi; Yan, Zhong; Huo, Chengxue; Zhang, Shengli; Su, Meng; Liao, Lei; Wang, Wenhui; Ni, Zhenhua; Hao, Yufeng; Zeng, Haibo

2016-11-15

Unlike the unstable black phosphorous, another two-dimensional group-VA material, antimonene, was recently predicted to exhibit good stability and remarkable physical properties. However, the synthesis of high-quality monolayer or few-layer antimonenes, sparsely reported, has greatly hindered the development of this new field. Here, we report the van der Waals epitaxy growth of few-layer antimonene monocrystalline polygons, their atomical microstructure and stability in ambient condition. The high-quality, few-layer antimonene monocrystalline polygons can be synthesized on various substrates, including flexible ones, via van der Waals epitaxy growth. Raman spectroscopy and transmission electron microscopy reveal that the obtained antimonene polygons have buckled rhombohedral atomic structure, consistent with the theoretically predicted most stable β-phase allotrope. The very high stability of antimonenes was observed after aging in air for 30 days. First-principle and molecular dynamics simulation results confirmed that compared with phosphorene, antimonene is less likely to be oxidized and possesses higher thermodynamic stability in oxygen atmosphere at room temperature. Moreover, antimonene polygons show high electrical conductivity up to 10 4  S m -1 and good optical transparency in the visible light range, promising in transparent conductive electrode applications.

Two-dimensional antimonene single crystals grown by van der Waals epitaxy

PubMed Central

Ji, Jianping; Song, Xiufeng; Liu, Jizi; Yan, Zhong; Huo, Chengxue; Zhang, Shengli; Su, Meng; Liao, Lei; Wang, Wenhui; Ni, Zhenhua; Hao, Yufeng; Zeng, Haibo

2016-01-01

Unlike the unstable black phosphorous, another two-dimensional group-VA material, antimonene, was recently predicted to exhibit good stability and remarkable physical properties. However, the synthesis of high-quality monolayer or few-layer antimonenes, sparsely reported, has greatly hindered the development of this new field. Here, we report the van der Waals epitaxy growth of few-layer antimonene monocrystalline polygons, their atomical microstructure and stability in ambient condition. The high-quality, few-layer antimonene monocrystalline polygons can be synthesized on various substrates, including flexible ones, via van der Waals epitaxy growth. Raman spectroscopy and transmission electron microscopy reveal that the obtained antimonene polygons have buckled rhombohedral atomic structure, consistent with the theoretically predicted most stable β-phase allotrope. The very high stability of antimonenes was observed after aging in air for 30 days. First-principle and molecular dynamics simulation results confirmed that compared with phosphorene, antimonene is less likely to be oxidized and possesses higher thermodynamic stability in oxygen atmosphere at room temperature. Moreover, antimonene polygons show high electrical conductivity up to 104 S m−1 and good optical transparency in the visible light range, promising in transparent conductive electrode applications. PMID:27845327

Electrochromic window with high reflectivity modulation

DOEpatents

Goldner, Ronald B.; Gerouki, Alexandra; Liu, Te-Yang; Goldner, Mark A.; Haas, Terry E.

2000-01-01

A multi-layered, active, thin film, solid-state electrochromic device having a high reflectivity in the near infrared in a colored state, a high reflectivity and transmissivity modulation when switching between colored and bleached states, a low absorptivity in the near infrared, and fast switching times, and methods for its manufacture and switching are provided. In one embodiment, a multi-layered device comprising a first indium tin oxide transparent electronic conductor, a transparent ion blocking layer, a tungsten oxide electrochromic anode, a lithium ion conducting-electrically resistive electrolyte, a complimentary lithium mixed metal oxide electrochromic cathode, a transparent ohmic contact layer, a second indium oxide transparent electronic conductor, and a silicon nitride encapsulant is provided. Through elimination of optional intermediate layers, simplified device designs are provided as alternative embodiments. Typical colored-state reflectivity of the multi-layered device is greater than 50% in the near infrared, bleached-state reflectivity is less than 40% in the visible, bleached-state transmissivity is greater than 60% in the near infrared and greater than 40% in the visible, and spectral absorbance is less than 50% in the range from 0.65-2.5 .mu.m.

Large-area synthesis and photoelectric properties of few-layer MoSe2 on molybdenum foils

NASA Astrophysics Data System (ADS)

Wu, Zenghui; Tai, Guoan; Wang, Xufeng; Hu, Tingsong; Wang, Rui; Guo, Wanlin

2018-03-01

Compared with MoS2 and WS2, selenide analogs have narrower band gaps and higher electron mobilities, which make them more applicable to real electrical devices. In addition, few-layer metal selenides have higher electrical conductivity, carrier mobility and light absorption than the corresponding monolayers. However, the large-scale and high-quality growth of few-layer metal selenides remains a significant challenge. Here, we develop a facile method to grow large-area and highly crystalline few-layer MoSe2 by directly selenizing the Mo foil surface at 550 °C within 60 min under ambient pressure. The atomic layers were controllably grown with thicknesses between 3.4 and 6 nm, which just met the thickness range required for high-performance electrical devices. Furthermore, we fabricated a vertical p-n junction photodetector composed of few-layer MoSe2 and p-type silicon, achieving photoresponsivity higher by two orders of magnitude than that of the reported monolayer counterpart. This technique provides a feasible approach towards preparing other 2D transition metal dichalcogendes for device applications.

High resolution thickness measurements of ultrathin Si:P monolayers using weak localization

NASA Astrophysics Data System (ADS)

Hagmann, Joseph A.; Wang, Xiqiao; Namboodiri, Pradeep; Wyrick, Jonathan; Murray, Roy; Stewart, M. D.; Silver, Richard M.; Richter, Curt A.

2018-01-01

The key building blocks for the fabrication of devices based on the deterministic placement of dopants in silicon using scanning tunneling microscopy (STM) hydrogen lithography are the formation of well-defined dopant delta-layers and the overgrowth of high quality crystalline Si. To develop these capabilities, it is of critical importance to quantify dopant movement in the sub-nanometer regime. To this end, we investigate Si:P delta-layer samples produced by fully exposing a Si surface to PH3 prior to Si encapsulation with dramatically different levels of dopant confinement. We examine the effect of delta layer confinement on the weak localization signal in parallel and perpendicular magnetic fields and extract the delta-layer thickness from fits to the Hikami-Larkin-Nagaoka equation. We find good agreement with secondary ion mass spectroscopy measurements and demonstrate the applicability of this method in the sub-nanometer thickness regime. Our analysis serves as detailed instruction for the determination of the conducting layer thickness of a Si:P delta-layer by means of a high-throughput, nondestructive electrical transport measurement.

Perovskite Solar Cells with Inorganic Electron- and Hole-Transport Layers Exhibiting Long-Term (≈500 h) Stability at 85 °C under Continuous 1 Sun Illumination in Ambient Air.

PubMed

Seo, Seongrok; Jeong, Seonghwa; Bae, Changdeuck; Park, Nam-Gyu; Shin, Hyunjung

2018-05-22

Despite the high power conversion efficiency (PCE) of perovskite solar cells (PSCs), poor long-term stability is one of the main obstacles preventing their commercialization. Several approaches to enhance the stability of PSCs have been proposed. However, an accelerating stability test of PSCs at high temperature under the operating conditions in ambient air remains still to be demonstrated. Herein, interface-engineered stable PSCs with inorganic charge-transport layers are shown. The highly conductive Al-doped ZnO films act as efficient electron-transporting layers as well as dense passivation layers. This layer prevents underneath perovskite from moisture contact, evaporation of components, and reaction with a metal electrode. Finally, inverted-type PSCs with inorganic charge-transport layers exhibit a PCE of 18.45% and retain 86.7% of the initial efficiency for 500 h under continuous 1 Sun illumination at 85 °C in ambient air with electrical biases (at maximum power point tracking). © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanoscale surface modification of Li-rich layered oxides for high-capacity cathodes in Li-ion batteries

NASA Astrophysics Data System (ADS)

Lan, Xiwei; Xin, Yue; Wang, Libin; Hu, Xianluo

2018-03-01

Li-rich layered oxides (LLOs) have been developed as a high-capacity cathode material for Li-ion batteries, but the structural complexity and unique initial charging behavior lead to several problems including large initial capacity loss, capacity and voltage fading, poor cyclability, and inferior rate capability. Since the surface conditions are critical to electrochemical performance and the drawbacks, nanoscale surface modification for improving LLO's properties is a general strategy. This review mainly summarizes the surface modification of LLOs and classifies them into three types of surface pre-treatment, surface gradient doping, and surface coating. Surface pre-treatment usually introduces removal of Li2O for lower irreversible capacity while surface doping is aimed to stabilize the structure during electrochemical cycling. Surface coating layers with different properties, protective layers to suppress the interface side reaction, coating layers related to structural transformation, and electronic/ionic conductive layers for better rate capability, can avoid the shortcomings of LLOs. In addition to surface modification for performance enhancement, other strategies can also be investigated to achieve high-performance LLO-based cathode materials.

High Transparent and Conductive TiO2/Ag/TiO2 Multilayer Electrode Films Deposited on Sapphire Substrate

NASA Astrophysics Data System (ADS)

Loka, Chadrasekhar; Moon, Sung Whan; Choi, YiSik; Lee, Kee-Sun

2018-03-01

Transparent conducting oxides attract intense interests due to its diverse industrial applications. In this study, we report sapphire substrate-based TiO2/Ag/TiO2 (TAT) multilayer structure of indium-free transparent conductive multilayer coatings. The TAT thin films were deposited at room temperature on sapphire substrates and a rigorous analysis has been presented on the electrical and optical properties of the films as a function of Ag thickness. The optical and electrical properties were mainly controlled by the Ag mid-layer thickness of the TAT tri-layer. The TAT films showed high luminous transmittance 84% at 550 nm along with noteworthy low electrical resistance 3.65 × 10-5 Ω-cm and sheet resistance of 3.77 Ω/square, which is better are than those of amorphous ITO films and any sapphire-based dielectric/metal/dielectric multilayer stack. The carrier concentration of the films was increased with respect to Ag thickness. We obtained highest Hackke's figure of merit 43.97 × 10-3 Ω-1 from the TAT multilayer thin film with a 16 nm thick Ag mid-layer.

Misfit layer compounds and ferecrystals: Model systems for thermoelectric nanocomposites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Merrill, Devin R.; Moore, Daniel B.; Bauers, Sage R.

A basic summary of thermoelectric principles is presented in a historical context, following the evolution of the field from initial discovery to modern day high-zT materials. A specific focus is placed on nanocomposite materials as a means to solve the challenges presented by the contradictory material requirements necessary for efficient thermal energy harvest. Misfit layer compounds are highlighted as an example of a highly ordered anisotropic nanocomposite system. Their layered structure provides the opportunity to use multiple constituents for improved thermoelectric performance, through both enhanced phonon scattering at interfaces and through electronic interactions between the constituents. Recently, a class ofmore » metastable, turbostratically-disordered misfit layer compounds has been synthesized using a kinetically controlled approach with low reaction temperatures. The kinetically stabilized structures can be prepared with a variety of constituent ratios and layering schemes, providing an avenue to systematically understand structure-function relationships not possible in the thermodynamic compounds. We summarize the work that has been done to date on these materials. The observed turbostratic disorder has been shown to result in extremely low cross plane thermal conductivity and in plane thermal conductivities that are also very small, suggesting the structural motif could be attractive as thermoelectric materials if the power factor could be improved. The first 10 compounds in the [(PbSe) 1+δ] m(TiSe₂) n family (m, n ≤ 3) are reported as a case study. As n increases, the magnitude of the Seebeck coefficient is significantly increased without a simultaneous decrease in the in-plane electrical conductivity, resulting in an improved thermoelectric power factor.« less

Misfit layer compounds and ferecrystals: Model systems for thermoelectric nanocomposites

DOE PAGES

Merrill, Devin R.; Moore, Daniel B.; Bauers, Sage R.; ...

2015-04-22

A basic summary of thermoelectric principles is presented in a historical context, following the evolution of the field from initial discovery to modern day high-zT materials. A specific focus is placed on nanocomposite materials as a means to solve the challenges presented by the contradictory material requirements necessary for efficient thermal energy harvest. Misfit layer compounds are highlighted as an example of a highly ordered anisotropic nanocomposite system. Their layered structure provides the opportunity to use multiple constituents for improved thermoelectric performance, through both enhanced phonon scattering at interfaces and through electronic interactions between the constituents. Recently, a class ofmore » metastable, turbostratically-disordered misfit layer compounds has been synthesized using a kinetically controlled approach with low reaction temperatures. The kinetically stabilized structures can be prepared with a variety of constituent ratios and layering schemes, providing an avenue to systematically understand structure-function relationships not possible in the thermodynamic compounds. We summarize the work that has been done to date on these materials. The observed turbostratic disorder has been shown to result in extremely low cross plane thermal conductivity and in plane thermal conductivities that are also very small, suggesting the structural motif could be attractive as thermoelectric materials if the power factor could be improved. The first 10 compounds in the [(PbSe) 1+δ] m(TiSe₂) n family (m, n ≤ 3) are reported as a case study. As n increases, the magnitude of the Seebeck coefficient is significantly increased without a simultaneous decrease in the in-plane electrical conductivity, resulting in an improved thermoelectric power factor.« less

Misfit Layer Compounds and Ferecrystals: Model Systems for Thermoelectric Nanocomposites

PubMed Central

Merrill, Devin R.; Moore, Daniel B.; Bauers, Sage R.; Falmbigl, Matthias; Johnson, David C.

2015-01-01

A basic summary of thermoelectric principles is presented in a historical context, following the evolution of the field from initial discovery to modern day high-zT materials. A specific focus is placed on nanocomposite materials as a means to solve the challenges presented by the contradictory material requirements necessary for efficient thermal energy harvest. Misfit layer compounds are highlighted as an example of a highly ordered anisotropic nanocomposite system. Their layered structure provides the opportunity to use multiple constituents for improved thermoelectric performance, through both enhanced phonon scattering at interfaces and through electronic interactions between the constituents. Recently, a class of metastable, turbostratically-disordered misfit layer compounds has been synthesized using a kinetically controlled approach with low reaction temperatures. The kinetically stabilized structures can be prepared with a variety of constituent ratios and layering schemes, providing an avenue to systematically understand structure-function relationships not possible in the thermodynamic compounds. We summarize the work that has been done to date on these materials. The observed turbostratic disorder has been shown to result in extremely low cross plane thermal conductivity and in plane thermal conductivities that are also very small, suggesting the structural motif could be attractive as thermoelectric materials if the power factor could be improved. The first 10 compounds in the [(PbSe)1+δ]m(TiSe2)n family (m, n ≤ 3) are reported as a case study. As n increases, the magnitude of the Seebeck coefficient is significantly increased without a simultaneous decrease in the in-plane electrical conductivity, resulting in an improved thermoelectric power factor. PMID:28788045

Anisotropic electrical and thermal conductivity in Bi{sub 2}AE{sub 2}Co{sub 2}O{sub 8+δ} [AE = Ca, Sr{sub 1−x}Ba{sub x} (x = 0.0, 0.25, 0.5, 0.75, 1.0)] single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Song-Tao; Institute of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003; Zhang, Bin-Bin

Bi{sub 2}AE{sub 2}Co{sub 2}O{sub 8+δ} (AE represents alkaline earth), constructed by stacking of rock-salt Bi{sub 2}AE{sub 2}O{sub 4} and triangle CoO{sub 2} layers alternatively along c-axis, is one of promising thermoelectric oxides. The most impressive feature of Bi{sub 2}AE{sub 2}Co{sub 2}O{sub 8+δ}, as reported previously, is their electrical conductivity mainly lying along CoO{sub 2} plane, adjusting Bi{sub 2}AE{sub 2}O{sub 4} layer simultaneously manipulates both thermal conductivity and electrical conductivity. It in turn optimizes thermoelectric performance of these materials. In this work, we characterize the anisotropic thermal and electrical conductivity along both ab-plane and c-direction of Bi{sub 2}AE{sub 2}Co{sub 2}O{sub 8+δ}more » (AE = Ca, Sr, Ba, Sr{sub 1−x}Ba{sub x}) single crystals. The results substantiate that isovalence replacement in Bi{sub 2}AE{sub 2}Co{sub 2}O{sub 8+δ} remarkably modifies their electrical property along ab-plane; while their thermal conductivity along ab-plane only has a slightly difference. At the same time, both the electrical conductivity and thermal conductivity along c-axis of these materials also have dramatic changes. Certainly, the electrical resistance along c-axis is too high to be used as thermoelectric applications. These results suggest that adjusting nano-block Bi{sub 2}AE{sub 2}O{sub 4} layer in Bi{sub 2}AE{sub 2}Co{sub 2}O{sub 8+δ} cannot modify the thermal conductivity along high electrical conductivity plane (ab-plane here). The evolution of electrical property is discussed by Anderson localization and electron-electron interaction U. And the modification of thermal conductivity along c-axis is attributed to the microstructure difference. This work sheds more light on the manipulation of the thermal and electrical conductivity in the layered thermoelectric materials.« less

Electric double-layer capacitors based on highly graphitized nanoporous carbons derived from ZIF-67.

PubMed

Torad, Nagy L; Salunkhe, Rahul R; Li, Yunqi; Hamoudi, Hicham; Imura, Masataka; Sakka, Yoshio; Hu, Chi-Chang; Yamauchi, Yusuke

2014-06-23

Nanoporous carbons (NPCs) have large specific surface areas, good electrical and thermal conductivity, and both chemical and mechanical stability, which facilitate their use in energy storage device applications. In the present study, highly graphitized NPCs are synthesized by one-step direct carbonization of cobalt-containing zeolitic imidazolate framework-67 (ZIF-67). After chemical etching, the deposited Co content can be completely removed to prepare pure NPCs with high specific surface area, large pore volume, and intrinsic electrical conductivity (high content of sp(2) -bonded carbons). A detailed electrochemical study is performed using cyclic voltammetry and galvanostatic charge-discharge measurements. Our NPC is very promising for efficient electrodes for high-performance supercapacitor applications. A maximum specific capacitance of 238 F g(-1) is observed at a scan rate of 20 mV s(-1) . This value is very high compared to previous works on carbon-based electric double layer capacitors. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Direct charge carrier injection into Ga2O3 thin films using an In2O3 cathode buffer layer: their optical, electrical and surface state properties

NASA Astrophysics Data System (ADS)

Cui, W.; Zhao, X. L.; An, Y. H.; Guo, D. Y.; Qing, X. Y.; Wu, Z. P.; Li, P. G.; Li, L. H.; Cui, C.; Tang, W. H.

2017-04-01

Conductive Ga2O3 thin films with an In2O3 buffer layer have been prepared on c-plane sapphire substrates using a laser molecular beam epitaxy technique. The effects of the In2O3 buffer layer on the structure and optical, electrical and surface state properties of the Ga2O3 films have been studied. The change in conductivity of the thin films is attributed to different thicknesses of the In2O3 buffer layer, which determine the concentration of charge carriers injected into the upper Ga2O3 layer from the interface of the bilayer thin films. In addition, the increase in flat band voltage shift and capacitance values as the In2O3 buffer layer thickens are attributed to the increase in surface state density, which also contributes to the rapid shrinkage of the optical band gap of the Ga2O3. With transparency to visible light, high n-type conduction and the ability to tune the optical band gap and surface state density, we propose that Ga2O3/In2O3 bilayer thin film is an ideal n-type semiconductor for fabrication of transparent power devices, solar cell electrodes and gas sensors.

In-Situ Wire Damage Detection System

NASA Technical Reports Server (NTRS)

Jolley, Scott T. (Inventor); Gibson, Tracy L. (Inventor); Medelius, Pedro J. (Inventor); Roberson, Luke B. (Inventor); Tate, Lanetra C. (Inventor); Smith, Trent M. (Inventor); Williams, Martha K. (Inventor)

2014-01-01

An in-situ system for detecting damage in an electrically conductive wire. The system includes a substrate at least partially covered by a layer of electrically conductive material forming a continuous or non-continuous electrically conductive layer connected to an electrical signal generator adapted to delivering electrical signals to the electrically conductive layer. Data is received and processed to identify damage to the substrate or electrically conductive layer. The electrically conductive material may include metalized carbon fibers, a thin metal coating, a conductive polymer, carbon nanotubes, metal nanoparticles or a combination thereof.

Chemoresistive gas sensor

DOEpatents

Hirschfeld, T.B.

1985-09-30

A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron tunneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner.

Chemoresistive gas sensor

DOEpatents

Hirschfeld, Tomas B.

1987-01-01

A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron funneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner.

Chemoresistive gas sensor

DOEpatents

Hirschfeld, T.B.

1987-06-23

A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron funneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner. 2 figs.

A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure

NASA Astrophysics Data System (ADS)

Tsai, Tsung-Ling; Chang, Hsiang-Yu; Lou, Jesse Jen-Chung; Tseng, Tseung-Yuen

2016-04-01

In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO2)/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO2/ITO single layer device, the ITO/ZrO2/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by forming an asymmetrical conductive filament with the weakest part at the ZrO2/AlON interface. Therefore, in the ITO/ZrO2/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.

ITO nanoparticles reused from ITO scraps and their applications to sputtering target for transparent conductive electrode layer.

PubMed

Hong, Sung-Jei; Song, Sang-Hyun; Kim, Byeong Jun; Lee, Jae-Yong; Kim, Young-Sung

2017-01-01

In this study, ITO nanoparticles (ITO-NPs) were reused from ITO target scraps to synthesize low cost ITO-NPs and to apply to make sputtering target for transparent conductive electrodes (TCEs). By controlling heat-treatment temperature as 980 °C, we achieved reused ITO-NPs having Brunauer, Emmett and Teller specific surface area (BET SSA) and average particle size 8.05 m 2 /g and 103.8 nm, respectively. The BET SSA decreases along with increasing heat-treatment temperature. The ITO-NPs were grown as round mound shape, and highly crystallized to (222) preferred orientations. Also, applying the reused ITO-NPs, we achieved an ITO target of which density was 99.6%. Using the ITO target, we achieved high quality TCE layer of which sheet resistance and optical transmittance at 550 nm were 29.5 Ω/sq. and 82.3%. Thus, it was confirmed that the reused ITO-NPs was feasible to sputtering target for TCEs layer.

ITO nanoparticles reused from ITO scraps and their applications to sputtering target for transparent conductive electrode layer

NASA Astrophysics Data System (ADS)

Hong, Sung-Jei; Song, Sang-Hyun; Kim, Byeong Jun; Lee, Jae-Yong; Kim, Young-Sung

2017-09-01

In this study, ITO nanoparticles (ITO-NPs) were reused from ITO target scraps to synthesize low cost ITO-NPs and to apply to make sputtering target for transparent conductive electrodes (TCEs). By controlling heat-treatment temperature as 980 °C, we achieved reused ITO-NPs having Brunauer, Emmett and Teller specific surface area (BET SSA) and average particle size 8.05 m2/g and 103.8 nm, respectively. The BET SSA decreases along with increasing heat-treatment temperature. The ITO-NPs were grown as round mound shape, and highly crystallized to (222) preferred orientations. Also, applying the reused ITO-NPs, we achieved an ITO target of which density was 99.6%. Using the ITO target, we achieved high quality TCE layer of which sheet resistance and optical transmittance at 550 nm were 29.5 Ω/sq. and 82.3%. Thus, it was confirmed that the reused ITO-NPs was feasible to sputtering target for TCEs layer.

Phosphor-free, white-light LED under alternating-current operation.

PubMed

Yao, Yu-Feng; Chen, Hao-Tsung; Su, Chia-Ying; Hsieh, Chieh; Lin, Chun-Han; Kiang, Yean-Woei; Yang, C C

2014-11-15

A light-emitting diode structure, consisting of a p-GaN layer, a CdZnO/ZnO quantum-well (QW) structure, a high-temperature-grown ZnO layer, and a GaZnO layer, is fabricated. Under forward bias, the device effectively emits green-yellow light, from the QW structure, at the rim of device mesa. Under reverse bias, electrons in the valence band of the p-GaN layer move into the conduction band of the GaZnO layer, through a QW-state-assisted tunneling process, to recombine with the injected holes in the GaZnO layer, for emitting yellow-red and shallow ultraviolet light over the entire mesa area. Also, carrier recombination in the p-GaN layer produces blue light. By properly designing the thickness of the high-temperature grown ZnO layer, the emission intensity under forward bias can be controlled such that, under alternating-current operation at 60 Hz, the spatial and spectral mixtures of the emitted lights of complementary colors, under forward and reverse biases, result in white light generation based on persistence of vision.

Planar ceramic membrane assembly and oxidation reactor system

DOEpatents

Carolan, Michael Francis; Dyer, legal representative, Kathryn Beverly; Wilson, Merrill Anderson; Ohm, Ted R.; Kneidel, Kurt E.; Peterson, David; Chen, Christopher M.; Rackers, Keith Gerard; Dyer, deceased, Paul Nigel

2007-10-09

Planar ceramic membrane assembly comprising a dense layer of mixed-conducting multi-component metal oxide material, wherein the dense layer has a first side and a second side, a porous layer of mixed-conducting multi-component metal oxide material in contact with the first side of the dense layer, and a ceramic channeled support layer in contact with the second side of the dense layer. The planar ceramic membrane assembly can be used in a ceramic wafer assembly comprising a planar ceramic channeled support layer having a first side and a second side; a first dense layer of mixed-conducting multi-component metal oxide material having an inner side and an outer side, wherein the inner side is in contact with the first side of the ceramic channeled support layer; a first outer support layer comprising porous mixed-conducting multi-component metal oxide material and having an inner side and an outer side, wherein the inner side is in contact with the outer side of the first dense layer; a second dense layer of mixed-conducting multi-component metal oxide material having an inner side and an outer side, wherein the inner side is in contact with the second side of the ceramic channeled layer; and a second outer support layer comprising porous mixed-conducting multi-component metal oxide material and having an inner side and an outer side, wherein the inner side is in contact with the outer side of the second dense layer.

Planar ceramic membrane assembly and oxidation reactor system

DOEpatents

Carolan, Michael Francis; Dyer, legal representative, Kathryn Beverly; Wilson, Merrill Anderson; Ohrn, Ted R.; Kneidel, Kurt E.; Peterson, David; Chen, Christopher M.; Rackers, Keith Gerard; Dyer, Paul Nigel

2009-04-07

Planar ceramic membrane assembly comprising a dense layer of mixed-conducting multi-component metal oxide material, wherein the dense layer has a first side and a second side, a porous layer of mixed-conducting multi-component metal oxide material in contact with the first side of the dense layer, and a ceramic channeled support layer in contact with the second side of the dense layer. The planar ceramic membrane assembly can be used in a ceramic wafer assembly comprising a planar ceramic channeled support layer having a first side and a second side; a first dense layer of mixed-conducting multi-component metal oxide material having an inner side and an outer side, wherein the inner side is in contact with the first side of the ceramic channeled support layer; a first outer support layer comprising porous mixed-conducting multi-component metal oxide material and having an inner side and an outer side, wherein the inner side is in contact with the outer side of the first dense layer; a second dense layer of mixed-conducting multi-component metal oxide material having an inner side and an outer side, wherein the inner side is in contact with the second side of the ceramic channeled layer; and a second outer support layer comprising porous mixed-conducting multi-component metal oxide material and having an inner side and an outer side, wherein the inner side is in contact with the outer side of the second dense layer.

Sustained ophthalmic delivery of highly soluble drug using pH-triggered inner layer-embedded contact lens.

PubMed

Zhu, Qiang; Cheng, Hongbo; Huo, Yingnan; Mao, Shirui

2018-06-10

In the present work the feasibility of using inner layer-embedded contact lenses (CLs) to achieve sustained release of highly water soluble drug, betaxolol hydrochloride (BH) on the ocular surface was investigated. Blend film of cellulose acetate and Eudragit S100 was selected as the inner layer, while silicone hydrogel was used as outer layer to construct inner layer-embedded contact lenses. Influence of polymer ratio in the blend film on in vitro drug release behavior in phosphate buffered solution or simulated tear fluid was studied and drug-polymer interaction, erosion and swelling of the blend film were characterized to better understand drug-release mechanism. Storage stability of the inner layer-embedded contact lenses in phosphate buffer solution was also conducted, with ignorable drug loss and negligible change in drug release pattern within 30 days. In vivo pharmacokinetic study in rabbits showed sustained drug release for over 240 h in tear fluid, indicating prolonged drug precorneal residence time. In conclusion, cellulose acetate/Eudragit S100 inner layer-embedded contact lenses are quite promising as controlled-release carrier of highly water soluble drug for ophthalmic delivery. Copyright © 2018 Elsevier B.V. All rights reserved.

Advanced materials and design for low temperature SOFCs

DOEpatents

Wachsman, Eric D.; Yoon, Heesung; Lee, Kang Taek; Camaratta, Matthew; Ahn, Jin Soo

2016-05-17

Embodiments of the invention are directed to SOFC with a multilayer structure comprising a porous ceramic cathode, optionally a cathodic triple phase boundary layer, a bilayer electrolyte comprising a cerium oxide comprising layer and a bismuth oxide comprising layer, an anion functional layer, and a porous ceramic anode with electrical interconnects, wherein the SOFC displays a very high power density at temperatures below 700.degree. C. with hydrogen or hydrocarbon fuels. The low temperature conversion of chemical energy to electrical energy allows the fabrication of the fuel cells using stainless steel or other metal alloys rather than ceramic conductive oxides as the interconnects.

Multi-layer micro/nanofluid devices with bio-nanovalves

DOEpatents

Li, Hao; Ocola, Leonidas E.; Auciello, Orlando H.; Firestone, Millicent A.

2013-01-01

A user-friendly multi-layer micro/nanofluidic flow device and micro/nano fabrication process are provided for numerous uses. The multi-layer micro/nanofluidic flow device can comprise: a substrate, such as indium tin oxide coated glass (ITO glass); a conductive layer of ferroelectric material, preferably comprising a PZT layer of lead zirconate titanate (PZT) positioned on the substrate; electrodes connected to the conductive layer; a nanofluidics layer positioned on the conductive layer and defining nanochannels; a microfluidics layer positioned upon the nanofluidics layer and defining microchannels; and biomolecular nanovalves providing bio-nanovalves which are moveable from a closed position to an open position to control fluid flow at a nanoscale.

Device Performance and Reliability Improvements of AlGaBN/GaN/Si MOSFET

DTIC Science & Technology

2016-02-04

Metal insulator semiconductor AlGaN /GaN high electron mobility transistors (MISHEMTs) are promising for power device applications due to a lower leakage...current than the conventional Schottky AlGaN/GaN HEMTs.1–3 Among a large number of insulator materials, an Al2O3 dielectric layer, deposited by...atomic layer deposition (ALD), is often employed as the gate insulator because of a large band gap (and the resultant high conduction band offset on

Compliant Interfacial Layers in Thermoelectric Devices

NASA Technical Reports Server (NTRS)

Firdosy, Samad A. (Inventor); Li, Billy Chun-Yip (Inventor); Ravi, Vilupanur A. (Inventor); Fleurial, Jean-Pierre (Inventor); Caillat, Thierry (Inventor); Anjunyan, Harut (Inventor)

2017-01-01

A thermoelectric power generation device is disclosed using one or more mechanically compliant and thermally and electrically conductive layers at the thermoelectric material interfaces to accommodate high temperature differentials and stresses induced thereby. The compliant material may be metal foam or metal graphite composite (e.g. using nickel) and is particularly beneficial in high temperature thermoelectric generators employing Zintl thermoelectric materials. The compliant material may be disposed between the thermoelectric segments of the device or between a thermoelectric segment and the hot or cold side interconnect of the device.

Method of making gas diffusion layers for electrochemical cells

DOEpatents

Frisk, Joseph William; Boand, Wayne Meredith; Larson, James Michael

2002-01-01

A method is provided for making a gas diffusion layer for an electrochemical cell comprising the steps of: a) combining carbon particles and one or more surfactants in a typically aqueous vehicle to make a preliminary composition, typically by high shear mixing; b) adding one or more highly fluorinated polymers to said preliminary composition by low shear mixing to make a coating composition; and c) applying the coating composition to an electrically conductive porous substrate, typically by a low shear coating method.

Reduced thermal conductivity by nanoscale intergrowths in perovskite like layered structure La{sub 2}Ti{sub 2}O{sub 7}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khaliq, Jibran; Chen, Kan; Li, Chunchun

2015-02-21

The effect of substitution and oxidation-reduction on the thermal conductivity of perovskite-like layered structure (PLS) ceramics was investigated in relation to mass contrast and non-stoichiometry. Sr (acceptor) was substituted on the A site, while Ta (donor) was substituted on the B site of La{sub 2}Ti{sub 2}O{sub 7}. Substitution in PLS materials creates atomic scale disorders to accommodate the non-stoichiometry. High resolution transmission electron microscopy and X ray diffraction revealed that acceptor substitution in La{sub 2}Ti{sub 2}O{sub 7} produced nanoscale intergrowths of n = 5 layered phase, while donor substitution produced nanoscale intergrowths of n = 3 layered phase. As a result of these nanoscalemore » intergrowths, the thermal conductivity value reduced by as much as ∼20%. Pure La{sub 2}Ti{sub 2}O{sub 7} has a thermal conductivity value of ∼1.3 W/m K which dropped to a value of ∼1.12 W/m K for Sr doped La{sub 2}Ti{sub 2}O{sub 7} and ∼0.93 W/m K for Ta doped La{sub 2}Ti{sub 2}O{sub 7} at 573 K.« less

Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces

DOEpatents

Weber, Michael F.

1991-10-08

A method for preventing shorts and shunts in solar cells having in order, an insulating substrate, a conductive metal layer on the substrate, an amorphous silicon layer and a transparent conductive layer. The method includes anodic etching of exposed portions of the metal layer after deposition of the amorphous silicon and prior to depositing the transparent conductive layer.

Multicolor and near-infrared electroluminescence from the light-emitting devices with rare-earth doped TiO{sub 2} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Chen; Gao, Zhifei; Wang, Canxing

2015-09-28

We report on multicolor and near-infrared electroluminescence (EL) from the devices using rare-earth doped TiO{sub 2} (TiO{sub 2}:RE) films as light-emitting layers, which are ascribed to the impact excitation of RE{sup 3+} ions, with the EL onset voltages below 10 V. The devices are in the structure of ITO/TiO{sub 2}:RE/SiO{sub 2}/Si, in which the SiO{sub 2} layer is ∼10 nm thick and RE includes Eu, Er, Tm, Nd, and so on. With sufficiently high positive voltage applied on the ITO electrode, the conduction electrons in Si can tunnel into the conduction band of SiO{sub 2} layer via the trap-assisted tunneling mechanism, gainingmore » the potential energy ∼4 eV higher than the conduction band edge of TiO{sub 2}. Therefore, as the electrons in the SiO{sub 2} layer drift into the TiO{sub 2}:RE layer, they become hot electrons. Such hot electrons impact-excite the RE{sup 3+} ions incorporated into the TiO{sub 2} host, leading to the characteristic emissions.« less

High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

PubMed Central

Muhammed, M. M.; Roldan, M. A.; Yamashita, Y.; Sahonta, S.-L.; Ajia, I. A.; Iizuka, K.; Kuramata, A.; Humphreys, C. J.; Roqan, I. S.

2016-01-01

We demonstrate the high structural and optical properties of InxGa1−xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm−2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1−xN epilayers can be achieved with high optical quality of InxGa1−xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design. PMID:27412372

High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer.

PubMed

Muhammed, M M; Roldan, M A; Yamashita, Y; Sahonta, S-L; Ajia, I A; Iizuka, K; Kuramata, A; Humphreys, C J; Roqan, I S

2016-07-14

We demonstrate the high structural and optical properties of InxGa1-xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 10(7) cm(-2)) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1-xN epilayers can be achieved with high optical quality of InxGa1-xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

Cold isopressing method

DOEpatents

Chen, Jack C.; Stawisuck, Valerie M.; Prasad, Ravi

2003-01-01

A cold isopressing method in which two or more layers of material are formed within an isopressing mold. One of the layers consists of a tape-cast film. The layers are isopressed within the isopressing mold, thereby to laminate the layers and to compact the tape-cast film. The isopressing mold can be of cylindrical configuration with the layers being coaxial cylindrical layers. The materials used in forming the layers can contain green ceramic materials and the resultant structure can be fired and sintered as necessary and in accordance with known methods to produce a finished composite, ceramic structure. Further, such green ceramic materials can be of the type that are capable of conducting hydrogen or oxygen ions at high temperature with the object of utilizing the finished composite ceramic structure as a ceramic membrane element.

Stability of high-speed boundary layers in oxygen including chemical non-equilibrium effects

NASA Astrophysics Data System (ADS)

Klentzman, Jill; Tumin, Anatoli

2013-11-01

The stability of high-speed boundary layers in chemical non-equilibrium is examined. A parametric study varying the edge temperature and the wall conditions is conducted for boundary layers in oxygen. The edge Mach number and enthalpy ranges considered are relevant to the flight conditions of reusable hypersonic cruise vehicles. Both viscous and inviscid stability formulations are used and the results compared to gain insight into the effects of viscosity and thermal conductivity on the stability. It is found that viscous effects have a strong impact on the temperature and mass fraction perturbations in the critical layer and in the viscous sublayer near the wall. Outside of these areas, the perturbations closely match in the viscous and inviscid models. The impact of chemical non-equilibrium on the stability is investigated by analyzing the effects of the chemical source term in the stability equations. The chemical source term is found to influence the growth rate of the second Mack mode instability but not have much of an effect on the mass fraction eigenfunction for the flow parameters considered. This work was supported by the AFOSR/NASA/National Center for Hypersonic Laminar-Turbulent Transition Research.

Tritium migration to the surfaces of Type 316 stainless steel; aluminum 6061; and oxygen-free, high-conductivity copper

DOE PAGES

Sharpe, M.; Shmayda, W. T.; Schroder, W. U.

2016-05-25

The migration of tritium to the surfaces of aluminum 6061, oxygen-free, high-conductivity copper (OFHC), and stainless-steel 316 from the bulk metal was studied using low-pressure Tonks–Langmuir argon plasma. The plasma is shown to be effective at removing tritium from metal surfaces in a controlled manner. Tritium is removed in decreasing quantities with successive plasma exposures, which suggests a depletion of the surface and near-surface tritium inventories. A diffusion model was developed to predict tritium migration from the bulk and its accumulation in the water layers present on the metal surface. The model reproduces the rate of tritium re-growth on themore » surface for all three metals and can be used to calculate the triton solubility in the water layers present on metal surfaces. The ratio of surface-to-bulk solubilities at the water-layer/bulk-metal interface uniquely determines the concentration ratio between these two media. Removing the tritium-rich water layers induces tritium to migrate from the bulk to the surface. Furthermore, this process is driven by a concentration gradient that develops in the bulk because of the perturbation on the surface.« less

BOLAS: A Canadian-US Ionospheric Tether Mission

NASA Technical Reports Server (NTRS)

Tyc, George; Vigneron, Frank; Jablonski, Alexander; James, H. Gordon; Carrington, Connie; Rupp, Charles

1997-01-01

Everyday, international broadcasters, ships, and aircraft use a naturally conducting atmospheric layer, the ionosphere, to reflect communications signals over the Earth's horizon. A better understanding of this layer, with its irregularities, instabilities, and dynamics, would improve communications transmission and reception. This atmospheric layer is also a lens that can distort signal transmissions from communications, navigation, and surveillance satellites. The ionosphere over Canada and other high latitude countries can carry large currents and is particularly dynamic, so that a scientific understanding of this layer is critical. The BOLAS (Bistatic Observations using Low Altitude Satellites) mission would characterize reflective and transmissive properties of the ionosphere by flying two satellites, each with identical HF receivers, dipole antennas, particle probes, and GPS receivers. The satellites would be connected by a non-conducting tether to maintain a 100 m separation, and would cartwheel in the orbit plane to spatially survey the ionosphere. The six-month mission would fly in a high inclination, 350 x 600 km orbit, and would be active during passes over the auroral region of Canada. This paper discusses the system requirements and architecture, spacecraft and operations concepts, and mission design, as well as team organization, international cooperation and the scientific and technological benefits that are expected.

Surface modification of AISI H13 tool steel by laser cladding with NiTi powder

NASA Astrophysics Data System (ADS)

Norhafzan, B.; Aqida, S. N.; Chikarakara, E.; Brabazon, D.

2016-04-01

This paper presents laser cladding of NiTi powder on AISI H13 tool steel surface for surface properties enhancement. The cladding process was conducted using Rofin DC-015 diffusion-cooled CO2 laser system with wavelength of 10.6 µm. NiTi powder was pre-placed on H13 tool steel surface. The laser beam was focused with a spot size of 90 µm on the sample surface. Laser parameters were set to 1515 and 1138 W peak power, 18 and 24 % duty cycle and 2300-3500 Hz laser pulse repetition frequency. Hardness properties of the modified layer were characterized by Wilson Hardness tester. Metallographic study and chemical composition were conducted using field emission scanning electron microscope and energy-dispersive X-ray spectrometer (EDXS) analysis. Results showed that hardness of NiTi clad layer increased three times that of the substrate material. The EDXS analysis detected NiTi phase presence in the modified layer up to 9.8 wt%. The metallographic study shows high metallurgical bonding between substrate and modified layer. These findings are significant to both increased hardness and erosion resistance of high-wear-resistant components and elongating their lifetime.

Effects of radiation and creep on viscoelastic damping materials

NASA Astrophysics Data System (ADS)

Henderson, John P.; Lewis, Tom M.; Murrell, Fred H.; Mangra, Danny

1995-05-01

The Advanced Photon Source (APS), under construction at Argonne National Laboratory (ANL), requires precise alignment of several large magnets. Submicron vibratory displacements of the magnets can degrade the performance of this important facility. Viscoelastic materials (VEM) have been shown to be effective in the control of the vibration of these magnets. Damping pads, placed under the magnet support structures in the APS storage ring, use thin layers of VEM. These soft VEM layers are subject to both high-energy radiation environment and continuous through-the-thickness compressive loads. Material experiments were conducted to answer concerns over the long term effects of the radiation environment and creep in the viscoelastic damping layers. The effects of exposure to radiation as high as 108 rad on the complex modulus were measured. Through-the-thickness creep displacements of VEM thin layers subjected to static loads of 50 psi were measured. Creep tests were conducted at elevated temperatures. Time-temperature equivalence principles were used to project creep displacements at room temperatures over several years. These damping material measurements should be of interest to vibration control engineers working with a variety of applications of fields ranging from aerospace to industrial machinery.

Ceramic substrate including thin film multilayer surface conductor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wolf, Joseph Ambrose; Peterson, Kenneth A.

2017-05-09

A ceramic substrate comprises a plurality of ceramic sheets, a plurality of inner conductive layers, a plurality of vias, and an upper conductive layer. The ceramic sheets are stacked one on top of another and include a top ceramic sheet. The inner conductive layers include electrically conductive material that forms electrically conductive features on an upper surface of each ceramic sheet excluding the top ceramic sheet. The vias are formed in each of the ceramic sheets with each via being filled with electrically conductive material. The upper conductive layer includes electrically conductive material that forms electrically conductive features on anmore » upper surface of the top ceramic sheet. The upper conductive layer is constructed from a stack of four sublayers. A first sublayer is formed from titanium. A second sublayer is formed from copper. A third sublayer is formed from platinum. A fourth sublayer is formed from gold.« less

Anisotropic in-plane thermal conductivity of black phosphorus nanoribbons at temperatures higher than 100 K

PubMed Central

Lee, Sangwook; Yang, Fan; Suh, Joonki; Yang, Sijie; Lee, Yeonbae; Li, Guo; Sung Choe, Hwan; Suslu, Aslihan; Chen, Yabin; Ko, Changhyun; Park, Joonsuk; Liu, Kai; Li, Jingbo; Hippalgaonkar, Kedar; Urban, Jeffrey J.; Tongay, Sefaattin; Wu, Junqiao

2015-01-01

Black phosphorus attracts enormous attention as a promising layered material for electronic, optoelectronic and thermoelectric applications. Here we report large anisotropy in in-plane thermal conductivity of single-crystal black phosphorus nanoribbons along the zigzag and armchair lattice directions at variable temperatures. Thermal conductivity measurements were carried out under the condition of steady-state longitudinal heat flow using suspended-pad micro-devices. We discovered increasing thermal conductivity anisotropy, up to a factor of two, with temperatures above 100 K. A size effect in thermal conductivity was also observed in which thinner nanoribbons show lower thermal conductivity. Analysed with the relaxation time approximation model using phonon dispersions obtained based on density function perturbation theory, the high anisotropy is attributed mainly to direction-dependent phonon dispersion and partially to phonon–phonon scattering. Our results revealing the intrinsic, orientation-dependent thermal conductivity of black phosphorus are useful for designing devices, as well as understanding fundamental physical properties of layered materials. PMID:26472285

Anisotropic in-plane thermal conductivity of black phosphorus nanoribbons at temperatures higher than 100 K

DOE PAGES

Lee, Sangwook; Yang, Fan; Suh, Joonki; ...

2015-10-16

Black phosphorus attracts enormous attention as a promising layered material for electronic, optoelectronic and thermoelectric applications. Here we report large anisotropy in in-plane thermal conductivity of single-crystal black phosphorus nanoribbons along the zigzag and armchair lattice directions at variable temperatures. Thermal conductivity measurements were carried out under the condition of steady-state longitudinal heat flow using suspended-pad micro-devices. We discovered increasing thermal conductivity anisotropy, up to a factor of two, with temperatures above 100 K. A size effect in thermal conductivity was also observed in which thinner nanoribbons show lower thermal conductivity. Analysed with the relaxation time approximation model using phononmore » dispersions obtained based on density function perturbation theory, the high anisotropy is attributed mainly to direction-dependent phonon dispersion and partially to phonon–phonon scattering. Lastly, our results revealing the intrinsic, orientation-dependent thermal conductivity of black phosphorus are useful for designing devices, as well as understanding fundamental physical properties of layered materials.« less

An ultra-thin, un-doped NiO hole transporting layer of highly efficient (16.4%) organic-inorganic hybrid perovskite solar cells.

PubMed

Seo, Seongrok; Park, Ik Jae; Kim, Myungjun; Lee, Seonhee; Bae, Changdeuck; Jung, Hyun Suk; Park, Nam-Gyu; Kim, Jin Young; Shin, Hyunjung

2016-06-02

NiO is a wide band gap p-type oxide semiconductor and has potential for applications in solar energy conversion as a hole-transporting layer (HTL). It also has good optical transparency and high chemical stability, and the capability of aligning the band edges to the perovskite (CH3NH3PbI3) layers. Ultra-thin and un-doped NiO films with much less absorption loss were prepared by atomic layer deposition (ALD) with highly precise control over thickness without any pinholes. Thin enough (5-7.5 nm in thickness) NiO films with the thickness of few time the Debye length (LD = 1-2 nm for NiO) show enough conductivities achieved by overlapping space charge regions. The inverted planar perovskite solar cells with NiO films as HTLs exhibited the highest energy conversion efficiency of 16.40% with high open circuit voltage (1.04 V) and fill factor (0.72) with negligible current-voltage hysteresis.

Thermal Performance of Cryogenic Multilayer Insulation at Various Layer Spacings

NASA Technical Reports Server (NTRS)

Johnson, Wesley Louis

2010-01-01

Multilayer insulation (MLI) has been shown to be the best performing cryogenic insulation system at high vacuum (less that 10 (exp 3) torr), and is widely used on spaceflight vehicles. Over the past 50 years, many investigations into MLI have yielded a general understanding of the many variables that are associated with MLI. MLI has been shown to be a function of variables such as warm boundary temperature, the number of reflector layers, and the spacer material in between reflectors, the interstitial gas pressure and the interstitial gas. Since the conduction between reflectors increases with the thickness of the spacer material, yet the radiation heat transfer is inversely proportional to the number of layers, it stands to reason that the thermal performance of MLI is a function of the number of layers per thickness, or layer density. Empirical equations that were derived based on some of the early tests showed that the conduction term was proportional to the layer density to a power. This power depended on the material combination and was determined by empirical test data. Many authors have graphically shown such optimal layer density, but none have provided any data at such low densities, or any method of determining this density. Keller, Cunnington, and Glassford showed MLI thermal performance as a function of layer density of high layer densities, but they didn't show a minimal layer density or any data below the supposed optimal layer density. However, it was recently discovered that by manipulating the derived empirical equations and taking a derivative with respect to layer density yields a solution for on optimal layer density. Various manufacturers have begun manufacturing MLI at densities below the optimal density. They began this based on the theory that increasing the distance between layers lowered the conductive heat transfer and they had no limitations on volume. By modifying the circumference of these blankets, the layer density can easily be varied. The simplest method of determining the thermal performance of MLI at cryogenic temperature is by boil-off calorimetry. Several blankets were procured and tested at various layer densities at the Cryogenics Test Laboratory at Kennedy Space Center. The densities that the blankets were tested over covered a wide range of layer densities including the analytical minimum. Several of the blankets were tested at the same insulation thickness while changing the layer density (thus a different number of reflector layers). Optimizing the layer density of multilayer insulation systems for heat transfer would remove a layer density from the complex method of designing such insulation systems. Additional testing was performed at various warm boundary temperatures and pressures. The testing and analysis was performed to simplify the analysis of cryogenic thermal insulation systems. This research was funded by the National Aeronautics and Space Administration's Exploration Technology Development Program's Cryogenic Fluid Management Project

Effective Thermal Conductivity of High Temperature Insulations for Reusable Launch Vehicles

NASA Technical Reports Server (NTRS)

Daryabeigi, Kamran

1999-01-01

An experimental apparatus was designed to measure the effective thermal conductivity of various high temperature insulations subject to large temperature gradients representative of typical launch vehicle re-entry aerodynamic heating conditions. The insulation sample cold side was maintained around room temperature, while the hot side was heated to temperatures as high as 1800 degrees Fahrenheit. The environmental pressure was varied from 0.0001 to 760 torr. All the measurements were performed in a dry gaseous nitrogen environment. The effective thermal conductivity of Saffil, Q-Fiber felt, Cerachrome, and three multi-layer insulation configurations were measured.

Superior Electrical Conductivity in Hydrogenated Layered Ternary Chalcogenide Nanosheets for Flexible All-Solid-State Supercapacitors.

PubMed

Hu, Xin; Shao, Wei; Hang, Xudong; Zhang, Xiaodong; Zhu, Wenguang; Xie, Yi

2016-05-04

As the properties of ultrathin two-dimensional (2D) crystals are strongly related to their electronic structures, more and more attempts were carried out to tune their electronic structures to meet the high standards for the construction of next-generation smart electronics. Herein, for the first time, we show that the conductive nature of layered ternary chalcogenide with formula of Cu2 WS4 can be switched from semiconducting to metallic by hydrogen incorporation, accompanied by a high increase in electrical conductivity. In detail, the room-temperature electrical conductivity of hydrogenated-Cu2 WS4 nanosheet film was almost 10(10) times higher than that of pristine bulk sample with a value of about 2.9×10(4)  S m(-1) , which is among the best values for conductive 2D nanosheets. In addition, the metallicity in the hydrogenated-Cu2 WS4 is robust and can be retained under high-temperature treatment. The fabricated all-solid-state flexible supercapacitor based on the hydrogenated-Cu2 WS4 nanosheet film shows promising electrochemical performances with capacitance of 583.3 F cm(-3) at a current density of 0.31 A cm(-3) . This work not only offers a prototype material for the study of electronic structure regulation in 2D crystals, but also paves the way in searching for highly conductive electrodes. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dependences of microstructure on electromagnetic interference shielding properties of nano-layered Ti3AlC2 ceramics.

PubMed

Tan, Yongqiang; Luo, Heng; Zhou, Xiaosong; Peng, Shuming; Zhang, Haibin

2018-05-21

The microstructure dependent electromagnetic interference (EMI) shielding properties of nano-layered Ti 3 AlC 2 ceramics were presented in this study by comparing the shielding properties of various Ti 3 AlC 2 ceramics with distinct microstructures. Results indicate that Ti 3 AlC 2 ceramics with dense microstructure and coarse grains are more favourable for superior EMI shielding efficiency. High EMI shielding effectiveness over 40 dB at the whole Ku-band frequency range was achieved in Ti 3 AlC 2 ceramics by microstructure optimization, and the high shielding effectiveness were well maintained up to 600 °C. A further investigation reveals that only the absorption loss displays variations upon modifying microstructure by allowing more extensive multiple reflections in coarse layered grains. Moreover, the absorption loss of Ti 3 AlC 2 was found to be much higher than those of highly conductive TiC ceramics without layered structure. These results demonstrate that nano-layered MAX phase ceramics are promising candidates of high-temperature structural EMI shielding materials and provide insightful suggestions for achieving high EMI shielding efficiency in other ceramic-based shielding materials.

Ethanol gas sensing performance of high-dimensional fuzz metal oxide nanostructure

NASA Astrophysics Data System (ADS)

Ibano, Kenzo; Kimura, Yoshihiro; Sugahara, Tohru; Lee, Heun Tae; Ueda, Yoshio

2018-04-01

Gas sensing ability of the He plasma induced fiber-like nanostructure, so-called fuzz structure, was firstly examined. A thin Mo layer deposited on a quartz surface was irradiated by He plasma to form the fuzz structure and oxidized by annealing in a quartz furnace. Electric conductivity of the fuzz Mo oxide layer was then measured through the Au electrodes deposited on the layer. Changes in electric conductivity by C2H5OH gas flow were examined as a function of temperature from 200 to 400 °C. Improved sensitivities were observed for the specimens after a fuzz nanostructure formation. However, the sensor developed in this study showed lower sensitivities than previously reported MoO3 nano-rod sensor, further optimization of oxidation is needed to improve the sensitivity.

High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

PubMed

Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

2018-04-18

A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

A novel strategy to increase separated electron-hole dipoles in commercial Si based solar panel to assist photovoltaic effect

NASA Astrophysics Data System (ADS)

Feng, Yefeng; He, Cheng-En; Xu, Zhichao; Hu, Jianbing; Peng, Cheng

2018-01-01

Interface induced polarization has been found to have a significant impact on dielectric properties of 2-2 type polymer composites bearing Si based semi-conducting ceramic sheets. Inherent overall polarity of polymer layers in 2-2 composites has been verified to be closely connected with interface effect and achieved permittivity in composites. In present work, conducting performances of monocrystalline Si sheets coated by varied high polarity material layers were deeply researched. The positive results inspired us to propose a novel strategy to improve separated electron-hole dipoles in commercial Si based solar cell panel for assisting photovoltaic effect, based on strong interface induced polarization. Conducting features of solar panels coated by two different high polarity polymer layers were detected to be greatly elevated compared with solar panel standalone, thanks to interface induced polarization between panel and polymer. Polymer coating with higher polarity would lead to more separated electron-hole dipole pairs in solar panel contributing to higher conductivity of panel. Valid synergy of interface effect and photovoltaic effect was based on their unidirectional traits of electron transfer. Dielectric properties of solar panels in composites further confirmed that strategy. This work might provide a facile route to prepare promising Si based solar panels with higher photoelectric conversion efficiency by enhancing interface induced polarization between panel and polymer coating.

RF tuning element

NASA Technical Reports Server (NTRS)

McGrath, William R. (Inventor); Lubecke, Victor M. (Inventor)

1992-01-01

A device for tuning a circuit includes a substrate, a transmission line on the substrate that includes first and second conductors coupled to a circuit to be tuned, and a movable short-circuit for varying the impedance the transmission line presents to the circuit to be tuned. The movable short-circuit includes a dielectric layer disposed atop the transmission line and a distributed shorting element in the form of a conductive member that is configured to be slid along at least a portion of the transmission line atop the dielectric layer. The conductive member is configured to span the first and second conductors of the transmission line and to define at least a first opening that spans the two conductors so that the conductive member includes first and second sections separated by the first opening. The first and second sections of the conductive member combine with the first and second conductors of the transmission line to form first and second low impedance sections of transmission line, and the opening combines with the first and second conductors of the transmission line and the dielectric layer to form a first high impedance section of transmission line intermediate the first and second low impedance sections. Each of the first low impedance section and the first high impedance section have a length along the transmission line of approximately one-quarter wavelength, thus providing a periodic variation of transmission line impedance. That enhances reflection of rf power.

An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer

NASA Astrophysics Data System (ADS)

Shealy, J. R.; Kaper, V.; Tilak, V.; Prunty, T.; Smart, J. A.; Green, B.; Eastman, L. F.

2002-04-01

The AlGaN/GaN high-electron-mobility transistor requires a thermally conducting, semi-insulating substrate to achieve the best possible microwave performance. The semi-insulating SiC substrate is currently the best choice for this device technology; however, fringing fields which penetrate the GaN buffer layer at pinch-off introduce significant substrate conduction at modest drain bias if channel electrons are not well confined to the nitride structure. The addition of an insulating AlN sub-buffer on the semi-insulating SiC substrate suppresses this parasitic conduction, which results in dramatic improvements in the AlGaN/GaN transistor performance. A pronounced reduction in both the gate-lag and the gate-leakage current are observed for structures with the AlN sub-buffer layer. These structures operate up to 50 V drain bias under drive, corresponding to a peak voltage of 80 V, for a 0.30 µm gate length device. The devices have achieved high-efficiency operation at 10 GHz (>70% power-added efficiency in class AB mode at 15 V drain bias) and the highest output power density observed thus far (11.2 W mm-1). Large-periphery devices (1.5 mm gate width) deliver 10 W (continuous wave) of maximum saturated output power at 10 GHz. The growth, processing, and performance of these devices are briefly reviewed.

Electrical insulator assembly with oxygen permeation barrier

DOEpatents

Van Der Beck, R.R.; Bond, J.A.

1994-03-29

A high-voltage electrical insulator for electrically insulating a thermoelectric module in a spacecraft from a niobium-1% zirconium alloy wall of a heat exchanger filled with liquid lithium while providing good thermal conductivity between the heat exchanger and the thermoelectric module. The insulator has a single crystal alumina layer (SxAl[sub 2]O[sub 3], sapphire) with a niobium foil layer bonded thereto on the surface of the alumina crystal facing the heat exchanger wall, and a molybdenum layer bonded to the niobium layer to act as an oxygen permeation barrier to preclude the oxygen depleting effects of the lithium from causing undesirable niobium-aluminum intermetallic layers near the alumina-niobium interface. 3 figures.

Magnetohydrodynamic electrode

DOEpatents

Marchant, David D.; Killpatrick, Don H.

1978-01-01

An electrode capable of withstanding high temperatures and suitable for use as a current collector in the channel of a magnetohydrodynamic (MHD) generator consists of a sintered powdered metal base portion, the upper surface of the base being coated with a first layer of nickel aluminide, an intermediate layer of a mixture of nickel aluminide - refractory ceramic on the first layer and a third or outer layer of a refractory ceramic material on the intermediate layer. The sintered powdered metal base resists spalling by the ceramic coatings and permits greater electrode compliance to thermal shock. The density of the powdered metal base can be varied to allow optimization of the thermal conductivity of the electrode and prevent excess heat loss from the channel.

Performance-Enhanced Activated Carbon Electrodes for Supercapacitors Combining Both Graphene-Modified Current Collectors and Graphene Conductive Additive.

PubMed

Wang, Rubing; Qian, Yuting; Li, Weiwei; Zhu, Shoupu; Liu, Fengkui; Guo, Yufen; Chen, Mingliang; Li, Qi; Liu, Liwei

2018-05-15

Graphene has been widely used in the active material, conductive agent, binder or current collector for supercapacitors, due to its large specific surface area, high conductivity, and electron mobility. However, works simultaneously employing graphene as conductive agent and current collector were rarely reported. Here, we report improved activated carbon (AC) electrodes (AC@G@NiF/G) simultaneously combining chemical vapor deposition (CVD) graphene-modified nickel foams (NiF/Gs) current collectors and high quality few-layer graphene conductive additive instead of carbon black (CB). The synergistic effect of NiF/Gs and graphene additive makes the performances of AC@G@NiF/G electrodes superior to those of electrodes with CB or with nickel foam current collectors. The performances of AC@G@NiF/G electrodes show that for the few-layer graphene addition exists an optimum value around 5 wt %, rather than a larger addition of graphene, works out better. A symmetric supercapacitor assembled by AC@G@NiF/G electrodes exhibits excellent cycling stability. We attribute improved performances to graphene-enhanced conductivity of electrode materials and NiF/Gs with 3D graphene conductive network and lower oxidation, largely improving the electrical contact between active materials and current collectors.

Performance-Enhanced Activated Carbon Electrodes for Supercapacitors Combining Both Graphene-Modified Current Collectors and Graphene Conductive Additive

PubMed Central

Wang, Rubing; Qian, Yuting; Li, Weiwei; Zhu, Shoupu; Liu, Fengkui; Guo, Yufen; Chen, Mingliang; Li, Qi; Liu, Liwei

2018-01-01

Graphene has been widely used in the active material, conductive agent, binder or current collector for supercapacitors, due to its large specific surface area, high conductivity, and electron mobility. However, works simultaneously employing graphene as conductive agent and current collector were rarely reported. Here, we report improved activated carbon (AC) electrodes (AC@G@NiF/G) simultaneously combining chemical vapor deposition (CVD) graphene-modified nickel foams (NiF/Gs) current collectors and high quality few-layer graphene conductive additive instead of carbon black (CB). The synergistic effect of NiF/Gs and graphene additive makes the performances of AC@G@NiF/G electrodes superior to those of electrodes with CB or with nickel foam current collectors. The performances of AC@G@NiF/G electrodes show that for the few-layer graphene addition exists an optimum value around 5 wt %, rather than a larger addition of graphene, works out better. A symmetric supercapacitor assembled by AC@G@NiF/G electrodes exhibits excellent cycling stability. We attribute improved performances to graphene-enhanced conductivity of electrode materials and NiF/Gs with 3D graphene conductive network and lower oxidation, largely improving the electrical contact between active materials and current collectors. PMID:29762528

Reduced thermal conductivity of nanotwinned random layer structures: a promising nanostructuring towards efficient Si and Si/Ge thermoelectric materials

NASA Astrophysics Data System (ADS)

Samaraweera, Nalaka; Chan, Kin L.; Mithraratne, Kumar

2018-05-01

Si and Si/Ge based nanostructures of reduced lattice thermal conductivity are widely attractive for developing efficient thermoelectric materials. In this study, we demonstrate the reduced thermal conductivity of Si nanotwinned random layer (NTRL) structures over corresponding superlattice and twin-free counterparts. The participation ratio analysis of vibrational modes shows that a possible cause of thermal conductivity reduction is phonon localization due to the random arrangement of twin boundaries. Via non-equilibrium molecular dynamic simulations, it is shown that ~23 and ~27% reductions over superlattice counterparts and ~55 and 53% over twin-free counterparts can be attained for the structures of total lengths of 90 and 170 nm, respectively. Furthermore, a random twin boundary distribution is applied for Si/Ge random layer structures seeking further reduction of thermal conductivity. A significant reduction in thermal conductivity of Si/Ge structures exceeding the thermal insulating performance of the corresponding amorphous Si structure by ~31% for a total length of 90 nm can be achieved. This reduction is as high as ~98% compared to the twin-free Si counterpart. It is demonstrated that application of randomly organised nanoscale twin boundaries is a promising nanostructuring strategy towards developing efficient Si and Si/Ge based thermoelectric materials in the future.

Method and Apparatus for Monitoring the Integrity of a Geomembrane Liner using time Domain Reflectometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morris, John L.

1998-11-09

Leaks are detected in a multi-layered geomembrane liner by a two-dimensional time domain reflectometry (TDR) technique. The TDR geomembrane liner is constructed with an electrically conductive detection layer positioned between two electrically non-conductive dielectric layers, which are each positioned between the detection layer and an electrically conductive reference layer. The integrity of the TDR geomembrane liner is determined by generating electrical pulses within the detection layer and measuring the time delay for any reflected electrical energy caused by absorption of moisture by a dielectric layer.

Method and apparatus for monitoring the integrity of a geomembrane liner using time domain reflectometry

DOEpatents

Morrison, John L [Idaho Falls, ID

2001-04-24

Leaks are detected in a multi-layered geomembrane liner by a two-dimensional time domain reflectometry (TDR) technique. The TDR geomembrane liner is constructed with an electrically conductive detection layer positioned between two electrically non-conductive dielectric layers, which are each positioned between the detection layer and an electrically conductive reference layer. The integrity of the TDR geomembrane liner is determined by generating electrical pulses within the detection layer and measuring the time delay for any reflected electrical energy caused by absorption of moisture by a dielectric layer.

AIN-Coated Al(2)O(3) Substrates For Electronic Circuits

NASA Technical Reports Server (NTRS)

Kolawa, Elzbieta; Lowry, Lynn; Herman, Martin; Lee, Karen

1996-01-01

Type of improved ceramic substrate for high-frequency, high-power electronic circuits combines relatively high thermal conductivity of aluminum nitride with surface smoothness of alumina. Consists of 15-micrometer layer of AIN deposited on highly polished alumina. Used for packaging millimeter-wave gallium arsenide transmitter chips, power silicon chips, and like.

Interdigitated photovoltaic power conversion device

DOEpatents

Ward, James Scott; Wanlass, Mark Woodbury; Gessert, Timothy Arthur

1999-01-01

A photovoltaic power conversion device has a top surface adapted to receive impinging radiation. The device includes at least two adjacent, serially connected cells. Each cell includes a semi-insulating substrate and a lateral conductivity layer of a first doped electrical conductivity disposed on the substrate. A base layer is disposed on the lateral conductivity layer and has the same electrical charge conductivity thereof. An emitter layer of a second doped electrical conductivity of opposite electrical charge is disposed on the base layer and forms a p-n junction therebetween. A plurality of spaced channels are formed in the emitter and base layers to expose the lateral conductivity layer at the bottoms thereof. A front contact grid is positioned on the top surface of the emitter layer of each cell. A first current collector is positioned along one outside edge of at least one first cell. A back contact grid is positioned in the channels at the top surface of the device for engagement with the lateral conductivity layer. A second current collector is positioned along at least one outside edge of at least one oppositely disposed second cell. Finally, an interdigitation mechanism is provided for serially connecting the front contact grid of one cell to the back contact grid of an adjacent cell at the top surface of the device.

Interdigitated photovoltaic power conversion device

DOEpatents

Ward, J.S.; Wanlass, M.W.; Gessert, T.A.

1999-04-27

A photovoltaic power conversion device has a top surface adapted to receive impinging radiation. The device includes at least two adjacent, serially connected cells. Each cell includes a semi-insulating substrate and a lateral conductivity layer of a first doped electrical conductivity disposed on the substrate. A base layer is disposed on the lateral conductivity layer and has the same electrical charge conductivity thereof. An emitter layer of a second doped electrical conductivity of opposite electrical charge is disposed on the base layer and forms a p-n junction therebetween. A plurality of spaced channels are formed in the emitter and base layers to expose the lateral conductivity layer at the bottoms thereof. A front contact grid is positioned on the top surface of the emitter layer of each cell. A first current collector is positioned along one outside edge of at least one first cell. A back contact grid is positioned in the channels at the top surface of the device for engagement with the lateral conductivity layer. A second current collector is positioned along at least one outside edge of at least one oppositely disposed second cell. Finally, an interdigitation mechanism is provided for serially connecting the front contact grid of one cell to the back contact grid of an adjacent cell at the top surface of the device. 15 figs.

The critical particle size for enhancing thermal conductivity in metal nanoparticle-polymer composites

NASA Astrophysics Data System (ADS)

Lu, Zexi; Wang, Yan; Ruan, Xiulin

2018-02-01

Polymers used as thermal interface materials are often filled with high-thermal conductivity particles to enhance the thermal performance. Here, we have combined molecular dynamics and the two-temperature model in 1D to investigate the impact of the metal filler size on the overall thermal conductivity. A critical particle size has been identified above which thermal conductivity enhancement can be achieved, caused by the interplay between high particle thermal conductivity and the added electron-phonon and phonon-phonon thermal boundary resistance brought by the particle fillers. Calculations on the SAM/Au/SAM (self-assembly-monolayer) system show a critical thickness Lc of around 10.8 nm. Based on the results, we define an effective thermal conductivity and propose a new thermal circuit analysis approach for the sandwiched metal layer that can intuitively explain simulation and experimental data. The results show that when the metal layer thickness decreases to be much smaller than the electron-phonon cooling length (or as the "thin limit"), the effective thermal conductivity is just the phonon portion, and electrons do not participate in thermal transport. As the thickness increases to the "thick limit," the effective thermal conductivity recovers the metal bulk value. Several factors that could affect Lc are discussed, and it is discovered that the thermal conductivity, thermal boundary resistance, and the electron-phonon coupling factor are all important in controlling Lc.

High performance capacitors using nano-structure multilayer materials fabrication

DOEpatents

Barbee, T.W. Jr.; Johnson, G.W.; O`Brien, D.W.

1995-05-09

A high performance capacitor is fabricated from nano-structure multilayer materials, such as by controlled, reactive sputtering, and having very high energy-density, high specific energy and high voltage breakdown. The multilayer capacitors, for example, may be fabricated in a ``notepad`` configuration composed of 200-300 alternating layers of conductive and dielectric materials so as to have a thickness of 1 mm, width of 200 mm, and length of 300 mm, with terminals at each end of the layers suitable for brazing, thereby guaranteeing low contact resistance and high durability. The notepad capacitors may be stacked in single or multiple rows (series-parallel banks) to increase the voltage and energy density. 5 figs.

High performance capacitors using nano-structure multilayer materials fabrication

DOEpatents

Barbee, T.W. Jr.; Johnson, G.W.; O`Brien, D.W.

1996-01-23

A high performance capacitor is described which is fabricated from nano-structure multilayer materials, such as by controlled, reactive sputtering, and having very high energy-density, high specific energy and high voltage breakdown. The multilayer capacitors, for example, may be fabricated in a ``notepad`` configuration composed of 200--300 alternating layers of conductive and dielectric materials so as to have a thickness of 1 mm, width of 200 mm, and length of 300 mm, with terminals at each end of the layers suitable for brazing, thereby guaranteeing low contact resistance and high durability. The ``notepad`` capacitors may be stacked in single or multiple rows (series-parallel banks) to increase the voltage and energy density. 5 figs.

Method of Fault Detection and Rerouting

NASA Technical Reports Server (NTRS)

Gibson, Tracy L. (Inventor); Medelius, Pedro J. (Inventor); Lewis, Mark E. (Inventor)

2013-01-01

A system and method for detecting damage in an electrical wire, including delivering at least one test electrical signal to an outer electrically conductive material in a continuous or non-continuous layer covering an electrically insulative material layer that covers an electrically conductive wire core. Detecting the test electrical signals in the outer conductive material layer to obtain data that is processed to identify damage in the outer electrically conductive material layer.

Synthesis and Characterization of Self-Standing and Highly Flexible δ-MnO2@CNTs/CNTs Composite Films for Direct Use of Supercapacitor Electrodes.

PubMed

Wu, Peng; Cheng, Shuang; Yang, Lufeng; Lin, Zhiqiang; Gui, Xuchun; Ou, Xing; Zhou, Jun; Yao, Minghai; Wang, Mengkun; Zhu, Yuanyuan; Liu, Meilin

2016-09-14

Self-standing and flexible films worked as pseudocapacitor electrodes have been fabricated via a simple vacuum-filtration procedure to stack δ-MnO2@carbon nanotubes (CNTs) composite layer and pure CNT layer one by one with CNT layers ended. The lightweight CNTs layers served as both current collector and supporter, while the MnO2@CNTs composite layers with birnessite-type MnO2 worked as active layer and made the main contribution to the capacitance. At a low discharge current of 0.2 A g(-1), the layered films displayed a high areal capacitance of 0.293 F cm(-2) with a mass of 1.97 mg cm(-2) (specific capacitance of 149 F g(-1)) and thickness of only 16.5 μm, and hence an volumetric capacitance of about 177.5 F cm(-3). Moreover, the films also exhibited a good rate capability (only about 15% fading for the capacitance when the discharge current increased to 5 A g(-1) from 0.2 A g(-1)), outstanding cycling stability (about 90% of the initial capacitance was remained after 5,000 cycles) and high flexibility (almost no performance change when bended to different angles). In addition, the capacitance of the films increased proportionally with the stacked layers and the geometry area. E.g., when the stacked layers were three times many with a mass of 6.18 mg cm(-2), the areal capacitance of the films was increased to 0.764 F cm(-2) at 0.5 A g(-1), indicating a high electronic conductivity. It is not overstated to say that the flexible and lightweight layered films emerged high potential for future practical applications as supercapacitor electrodes.

Numerical Modeling of Active Flow Control in a Boundary Layer Ingesting Offset Inlet

NASA Technical Reports Server (NTRS)

Allan, Brian G.; Owens, Lewis R.; Berrier, Bobby L.

2004-01-01

This investigation evaluates the numerical prediction of flow distortion and pressure recovery for a boundary layer ingesting offset inlet with active flow control devices. The numerical simulations are computed using a Reynolds averaged Navier-Stokes code developed at NASA. The numerical results are validated by comparison to experimental wind tunnel tests conducted at NASA Langley Research Center at both low and high Mach numbers. Baseline comparisons showed good agreement between numerical and experimental results. Numerical simulations for the inlet with passive and active flow control also showed good agreement at low Mach numbers where experimental data has already been acquired. Numerical simulations of the inlet at high Mach numbers with flow control jets showed an improvement of the flow distortion. Studies on the location of the jet actuators, for the high Mach number case, were conducted to provide guidance for the design of a future experimental wind tunnel test.

Characterization of MoS2-Graphene Composites for High-Performance Coin Cell Supercapacitors.

PubMed

Bissett, Mark A; Kinloch, Ian A; Dryfe, Robert A W

2015-08-12

Two-dimensional materials, such as graphene and molybdenum disulfide (MoS2), can greatly increase the performance of electrochemical energy storage devices because of the combination of high surface area and electrical conductivity. Here, we have investigated the performance of solution exfoliated MoS2 thin flexible membranes as supercapacitor electrodes in a symmetrical coin cell arrangement using an aqueous electrolyte (Na2SO4). By adding highly conductive graphene to form nanocomposite membranes, it was possible to increase the specific capacitance by reducing the resistivity of the electrode and altering the morphology of the membrane. With continued charge/discharge cycles the performance of the membranes was found to increase significantly (up to 800%), because of partial re-exfoliation of the layered material with continued ion intercalation, as well as increasing the specific capacitance through intercalation pseudocapacitance. These results demonstrate a simple and scalable application of layered 2D materials toward electrochemical energy storage.

A dendrite-suppressing composite ion conductor from aramid nanofibres.

PubMed

Tung, Siu-On; Ho, Szushen; Yang, Ming; Zhang, Ruilin; Kotov, Nicholas A

2015-01-27

Dendrite growth threatens the safety of batteries by piercing the ion-transporting separators between the cathode and anode. Finding a dendrite-suppressing material that combines high modulus and high ionic conductance has long been considered a major technological and materials science challenge. Here we demonstrate that these properties can be attained in a composite made from Kevlar-derived aramid nanofibres assembled in a layer-by-layer manner with poly(ethylene oxide). Importantly, the porosity of the membranes is smaller than the growth area of the dendrites so that aramid nanofibres eliminate 'weak links' where the dendrites pierce the membranes. The aramid nanofibre network suppresses poly(ethylene oxide) crystallization detrimental for ion transport, giving a composite that exhibits high modulus, ionic conductivity, flexibility, ion flux rates and thermal stability. Successful suppression of hard copper dendrites by the composite ion conductor at extreme discharge conditions is demonstrated, thereby providing a new approach for the materials engineering of solid ion conductors.

Large thermoelectric figure of merit in graphene layered devices at low temperature

NASA Astrophysics Data System (ADS)

Olaya, Daniel; Hurtado-Morales, Mikel; Gómez, Daniel; Alejandro Castañeda-Uribe, Octavio; Juang, Zhen-Yu; Hernández, Yenny

2018-01-01

Nanostructured materials have emerged as an alternative to enhance the figure of merit (ZT) of thermoelectric (TE) devices. Graphene exhibits a high electrical conductivity (in-plane) that is necessary for a high ZT; however, this effect is countered by its impressive thermal conductivity. In this work TE layered devices composed of electrochemically exfoliated graphene (EEG) and a phonon blocking material such as poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), polyaniline (PANI) and gold nanoparticles (AuNPs) at the interface were prepared. The figure of merit, ZT, of each device was measured in the cross-plane direction using the Transient Harman Method (THM) and complemented with AFM-based measurements. The results show remarkable high ZT values (0.81  <  ZT  <  2.45) that are directly related with the topography, surface potential, capacitance gradient and resistance of the devices at the nanoscale.

Mechanical and electric characteristics of vacuum impregnated no-insulation HTS coil

NASA Astrophysics Data System (ADS)

Park, Heecheol; Kim, A.-rong; Kim, Seokho; Park, Minwon; Kim, Kwangmin; Park, Taejun

2014-09-01

For the conduction cooling application, epoxy impregnation is inevitable to enhance the thermal conduction. However, there have been several research results on the delamination problem with coated conductor and the main cause of the delamination is related with the different thermal contraction between epoxy, the insulation layer and the weak conductor. To avoid this problem, the amount of epoxy and insulation layer between conductors should be minimized or removed. Therefore, no insulation (NI) winding method and impregnation after dry winding can be considered to solve the problem. The NI coil winding method is very attractive due to high mechanical/thermal stability for the special purpose of DC magnets by removing the insulation layer. In this paper, the NI coil winding method and vacuum impregnation are applied to a HTS coil to avoid the delamination problem and enhance the mechanical/thermal stability for the conduction cooling application. Through the charging/discharging operation, electric/thermal characteristics are investigated at 77 K and 30 K.

High-performance metal mesh/graphene hybrid films using prime-location and metal-doped graphene.

PubMed

Min, Jung-Hong; Jeong, Woo-Lim; Kwak, Hoe-Min; Lee, Dong-Seon

2017-08-31

We introduce high-performance metal mesh/graphene hybrid transparent conductive layers (TCLs) using prime-location and metal-doped graphene in near-ultraviolet light-emitting diodes (NUV LEDs). Despite the transparency and sheet resistance values being similar for hybrid TCLs, there were huge differences in the NUV LEDs' electrical and optical properties depending on the location of the graphene layer. We achieved better physical stability and current spreading when the graphene layer was located beneath the metal mesh, in direct contact with the p-GaN layer. We further improved the contact properties by adding a very thin Au mesh between the thick Ag mesh and the graphene layer to produce a dual-layered metal mesh. The Au mesh effectively doped the graphene layer to create a p-type electrode. Using Raman spectra, work function variations, and the transfer length method (TLM), we verified the effect of doping the graphene layer after depositing a very thin metal layer on the graphene layers. From our results, we suggest that the nature of the contact is an important criterion for improving the electrical and optical performance of hybrid TCLs, and the method of doping graphene layers provides new opportunities for solving contact issues in other semiconductor devices.

Laser-assisted atom probe tomography of four paired poly-Si/SiO2 multiple-stacks with each thickness of 10 nm

NASA Astrophysics Data System (ADS)

Kwak, C.-M.; Seol, J.-B.; Kim, Y.-T.; Park, C.-G.

2017-02-01

For the past 10 years, laser-assisted atom probe tomography (APT) analysis has been performed to quantify the near-atomic scale distribution of elements and their local chemical compositions within interfaces that determine the design, processing, and properties of virtually all materials. However, the nature of the occurring laser-induced emission at the surface of needle-shaped sample is highly complex and it has been an ongoing challenge to understand the surface-related interactions between laser-sources and tips containing non-conductive oxides for a robust and reliable analysis of multiple-stacked devices. Here, we find that the APT analysis of four paired poly-Si/SiO2 (conductive/non-conductive) multiple stacks with each thickness of 10 nm is governed by experimentally monitoring three experimental conditions, such as laser-beam energies ranged from 30 to 200 nJ, analysis temperatures varying with 30-100 K, and the inclination of aligned interfaces within a given tip toward analysis direction. Varying with laser-energy and analysis temperature, a drastic compositional ratio of doubly charged Si ions to single charged Si ions within conductive poly-Si layers is modified, as compared with ones detected in the non-conductive layers. Severe distorted APT images of multiple stacks are also inevitable, especially at the conductive layers, and leading to a lowering of the successful analysis yields. This lower throughput has been overcome though changing the inclination of interfaces within a given tip to analysis direction (planar interfaces parallel to the tip axis), but significant deviations in chemical compositions of a conductive layer counted from those of tips containing planar interfaces perpendicular to the tip axis are unavoidable owing to the Si2, SiH2O, and Si2O ions detected, for the first time, within poly-Si layers.

Mechanical Properties and Durability of Advanced Environmental Barrier Coatings in Calcium-Magnesium-Alumino-Silicate Environments

NASA Technical Reports Server (NTRS)

Miladinovich, Daniel S.; Zhu, Dongming

2011-01-01

Environmental barrier coatings are being developed and tested for use with SiC/SiC ceramic matrix composite (CMC) gas turbine engine components. Several oxide and silicate based compositons are being studied for use as top-coat and intermediate layers in a three or more layer environmental barrier coating system. Specifically, the room temperature Vickers-indentation-fracture-toughness testing and high-temperature stability reaction studies with Calcium Magnesium Alumino-Silicate (CMAS or "sand") are being conducted using advanced testing techniques such as high pressure burner rig tests as well as high heat flux laser tests.

Highly efficient and low voltage silver nanowire-based OLEDs employing a n-type hole injection layer.

PubMed

Lee, Hyungjin; Lee, Donghwa; Ahn, Yumi; Lee, Eun-Woo; Park, Lee Soon; Lee, Youngu

2014-08-07

Highly flexible and efficient silver nanowire-based organic light-emitting diodes (OLEDs) have been successfully fabricated by employing a n-type hole injection layer (HIL). The silver nanowire-based OLEDs without light outcoupling structures exhibited excellent device characteristics such as extremely low turn-on voltage (3.6 V) and high current and power efficiencies (44.5 cd A(-1) and 35.8 lm W(-1)). In addition, flexible OLEDs with the silver nanowire transparent conducting electrode (TCE) and n-type HIL fabricated on plastic substrates showed remarkable mechanical flexibility as well as device performance.

The electrophoretic deposition of ZnO on highly oriented pyrolytic graphite

NASA Astrophysics Data System (ADS)

Ghalamboran, Milad; Jahangiri, Mojtaba; Yousefiazari, Ehsan

2017-12-01

Intensive research has been conducted on ZnO thin and thick films in recent years. Such layers, used in different electronic devices, are deposited utilizing various methods, but electrophoretic deposition (EPD) has been chosen because of the advantages like low energy consumption, economical superiority, ecofriendliness, controllability, and high deposition rate. Here, we report electrophoretically depositing ZnO layers onto highly oriented pyrolytic graphite. Well-dispersed and stable ZnO suspensions are used for the deposition of continuous and even layers of ZnO on the substrate. ZnO powder is dispersed in acetone. The electric field applied is in the 250 V/cm to 2000 V/cm range. The morphology of the deposits are studied by SEM at the different stages of the deposition process.

High Resolution Quantitative Microbeam Analysis of Ir-coated Geological Specimens Using Conventionally Coated Standards

NASA Astrophysics Data System (ADS)

Armstrong, J. T.; Crispin, K. L.

2012-12-01

Traditionally, quantitative electron microbeam analyses of insulating specimens are performed after coating the materials with thin conducting layers of carbon. For x-ray lines greater than 1 keV in energy and beam voltages in excess of 10 keV, the results are insensitive to the exact thickness of the carbon coat. High resolution imaging, low voltage analysis, and analysis of specimens containing low levels of carbon require the use of substitute conductive coats. Typical substitutes for carbon coats (e.g., Au, Au-Pd, Cr, Al) require either using similarly coated standards or substantial corrections to be applied. Even when using modern multi-layer correction algorithms or Monte Carlo calculations, significant errors can result (e.g., Armstrong 2009, Armstrong and Crispin, 2012). We propose the use of ultra-thin layers of Ir as a substitute for C in the analysis of insulating geological specimens. Ir has been found to be an excellent coating material for high resolution imaging (e.g., Echlin, 2009). Sputtered layers as thin as 0.5 nm are found to be conductive, and layers of just a few nm provide good protection against beam damage with sub-nm grain size (Sebring et al., 1999). We have analyzed a series of geological materials with Ir coats between 1 - 8 nm and found similar levels of effects on emitted x-ray intensities as produced with typical carbon coat thicknesses (10-25 nm). E.g., for Ir thicknesses less than 5 nm, the reduction of intensity for x-ray lines between 1 and 7 keV are between 1-3% for a beam energy of 15 keV. The reduction in intensity for higher-energy lines such as Fe-K is actually less than produced by typical C-coats. We will present the results of these experiments and propose simple algorithmic equations which fit these data.

High-explosive driven crowbar switch

DOEpatents

Dike, Robert S.; Kewish, Jr., Ralph W.

1976-01-13

The disclosure relates to a compact explosive driven switch for use as a low resistance, low inductance crowbar switch. A high-explosive charge extrudes a deformable conductive metallic plate through a polyethylene insulating layer to achieve a hard current contact with a supportive annular conductor.

Hypersonic Boundary Layer Stability Experiments in a Quiet Wind Tunnel with Bluntness Effects

NASA Technical Reports Server (NTRS)

Lachowicz, Jason T.; Chokani, Ndaona

1996-01-01

Hypersonic boundary layer measurements over a flared cone were conducted in a Mach 6 quiet wind tunnel at a freestream unit Reynolds number of 2.82 million/ft. This Reynolds number provided laminar-to-transitional flow over the cone model in a low-disturbance environment. Four interchangeable nose-tips, including a sharp-tip, were tested. Point measurements with a single hot-wire using a novel constant voltage anemometer were used to measure the boundary layer disturbances. Surface temperature and schlieren measurements were also conducted to characterize the transitional state of the boundary layer and to identify instability modes. Results suggest that second mode disturbances were the most unstable and scaled with the boundary layer thickness. The second mode integrated growth rates compared well with linear stability theory in the linear stability regime. The second mode is responsible for transition onset despite the existence of a second mode subharmonic. The subharmonic disturbance wavelength also scales with the boundary layer thickness. Furthermore, the existence of higher harmonics of the fundamental suggests that nonlinear disturbances are not associated with 'high' free stream disturbance levels. Nose-tip radii greater than 2.7% of the base radius completely stabilized the second mode.

Monolithic quasi-solid-state dye-sensitized solar cells based on graphene modified mesoscopic carbon counter electrodes

NASA Astrophysics Data System (ADS)

Rong, Yaoguang; Li, Xiong; Liu, Guanghui; Wang, Heng; Ku, Zhiliang; Xu, Mi; Liu, Linfeng; Hu, Min; Yang, Ying; Han, Hongwei

2013-03-01

We have developed a monolithic quasi-solid-state dye-sensitized solar cell (DSSC) based on graphene modified mesoscopic carbon counter electrode (GC-CE), which offers a promising prospect for commercial applications. Based on the design of a triple layer structure, the TiO2 working electrode layer, ZrO2 spacer layer and carbon counter electrode (CE) layer are constructed on a single conducting glass substrate by screen-printing. The quasi-solid-state polymer gel electrolyte employs a polymer composite as the gelator and could effectively infiltrate into the porous layers. Fabricated with normal carbon counter electrode (NC-CE) containing graphite and carbon black, the device shows a power conversion efficiency (PCE) of 5.09% with the fill factor (FF) of 0.63 at 100 mW cm-2 AM1.5 illumination. When the NC-CE is modified with graphene sheets, the PCE and FF could be enhanced to 6.27% and 0.71, respectively. This improvement indicates excellent conductivity and high electrocatalytic activity of the graphene sheets, which have been considered as a promising platinum-free electrode material for DSSCs.

Numerical analysis of the hydrogeologic controls in a layered coastal aquifer system, Oahu, Hawaii, USA

USGS Publications Warehouse

Oki, D.S.; Souza, W.R.; Bolke, E.L.; Bauer, G.R.

1998-01-01

The coastal aquifer system of southern Oahu, Hawaii, USA, consists of highly permeable volcanic aquifers overlain by weathered volcanic rocks and interbedded marine and terrestrial sediments of both high and low permeability. The weathered volcanic rocks and sediments are collectively known as caprock, because they impede the free discharge of groundwater from the underlying volcanic aquifers. A cross-sectional groundwater flow and transport model was used to evaluate the hydrogeologic controls on the regional flow system in southwestern Oahu. Controls considered were: (a) overall caprock hydraulic conductivity; and (b) stratigraphic variations of hydraulic conductivity in the caprock. Within the caprock, variations in hydraulic conductivity, caused by stratigraphy or discontinuities of the stratigraphic units, are a major control on the direction of groundwater flow and the distribution of water levels and salinity. Results of cross-sectional modeling confirm the general groundwater flow pattern that would be expected in a layered coastal system. Ground-water flow is: (a) predominantly upward in the low-permeability sedimentary units; and (b) predominantly horizontal in the high-permeability sedimentary units.

In-situ falling-head test for hydraulic conductivity: Evaluation in layered sediments of an analysis derived for homogenous sediments

NASA Astrophysics Data System (ADS)

Burnette, Matthew C.; Genereux, David P.; Birgand, François

2016-08-01

The hydraulic conductivity (K) of streambeds is a critical variable controlling interaction of groundwater and surface water. The Hvorslev analysis for estimating K from falling-head test data has been widely used since the 1950s, but its performance in layered sandy sediments common in streams and lakes has not previously been examined. Our numerical simulations and laboratory experiments show that the Hvorslev analysis yields accurate K values in both homogenous sediment (for which the analysis was originally derived) and layered deposits with low-K sand over high-K sand. K from the Hvorslev analysis deviated significantly from true K only when two conditions were present together: (1) high-K sand was present over low-K sand, and (2) the bottom of the permeameter in which K was measured was at or very near the interface between high-K and low-K. When this combination of conditions exists, simulation and laboratory sand tank results show that in-situ Hvorslev K underestimates the true K of the sediment within a permeameter, because the falling-head test is affected by low-K sediment outside of (below the bottom of) the permeameter. In simulation results, the maximum underestimation (occurring when the bottom of the permeameter was at the interface of high K over low K) was by a factor of 0.91, 0.59, and 0.12 when the high-K to low-K ratio was 2, 10, and 100, respectively. In laboratory sand tank experiments, the underestimation was by a factor of about 0.83 when the high-K to low-K ratio was 2.3. Also, this underestimation of K by the Hvorslev analysis was about the same whether the underlying low-K layer was 2 cm or 174 cm thick (1% or 87% of the domain thickness). Numerical model simulations were useful in the interpretation of in-situ field K profiles at streambed sites with layering; specifically, scaling the model results to the maximum measured K at the top of the field K profiles helped constrain the likely ratio of high K to low K at field locations with layered heterogeneity. Vertical K values are important in field studies of groundwater-surface water interaction, and the Hvorslev analysis can be a useful tool, even in layered media, when applied carefully.

Structural and interfacial defects in c-axis oriented LiNbO3 thin films grown by pulsed laser deposition on Si using Al : ZnO conducting layer

NASA Astrophysics Data System (ADS)

Shandilya, Swati; Tomar, Monika; Sreenivas, K.; Gupta, Vinay

2009-05-01

Highly c-axis oriented LiNbO3 films are deposited using pulsed laser deposition on a silicon substrate using a transparent conducting Al doped ZnO layer. X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phase and oriented LiNbO3 films under the optimized deposition condition. An extra peak at 905 cm-1 was observed in the Raman spectra of LiNbO3 film deposited at higher substrate temperature and higher oxygen pressure, and attributed to the presence of niobium antisite defects in the lattice. Dielectric constant and ac conductivity of oriented LiNbO3 films deposited under the static and rotating substrate modes have been studied. Films deposited under the rotating substrate mode exhibit dielectric properties close to the LiNbO3 single crystal. The cause of deviation in the dielectric properties of the film deposited under the static substrate mode, in comparison with the bulk, are discussed in the light of the possible formation of an interdiffusion layer at the interface of the LiNbO3 film and the Al : ZnO layer.

Real-time detection of mercury ions in water using a reduced graphene oxide/DNA field-effect transistor with assistance of a passivation layer

DOE PAGES

Chang, Jingbo; Zhou, Guihua; Gao, Xianfeng; ...

2015-08-01

Field-effect transistor (FET) sensors based on reduced graphene oxide (rGO) for detecting chemical species provide a number of distinct advantages, such as ultrasensitivity, label-free, and real-time response. However, without a passivation layer, channel materials directly exposed to an ionic solution could generate multiple signals from ionic conduction through the solution droplet, doping effect, and gating effect. Therefore, a method that provides a passivation layer on the surface of rGO without degrading device performance will significantly improve device sensitivity, in which the conductivity changes solely with the gating effect. In this work, we report rGO FET sensor devices with Hg 2+-dependentmore » DNA as a probe and the use of an Al 2O 3 layer to separate analytes from conducting channel materials. The device shows good electronic stability, excellent lower detection limit (1 nM), and high sensitivity for real-time detection of Hg 2+ in an underwater environment. Our work shows that optimization of an rGO FET structure can provide significant performance enhancement and profound fundamental understanding for the sensor mechanism.« less

A General Computational Approach for Magnetohydrodynamic Flows Using the CFX Code: Buoyant Flow Through a Vertical Square Channel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Di Piazza, Ivan; Buehler, Leo

2000-09-15

The buoyancy-driven magnetoconvection in the cross section of an infinitely long vertical square duct is investigated numerically using the CFX code package. The implementation of a magnetohydrodynamic (MHD) problem in CFX is discussed, with particular reference to the Lorentz forces and the electric potential boundary conditions for arbitrary electrical conductivity of the walls. The method proposed is general and applies to arbitrary geometries with an arbitrary orientation of the magnetic field. Results for fully developed flow under various thermal boundary conditions are compared with asymptotic analytical solutions. The comparison shows that the asymptotic analysis is confirmed for highly conducting wallsmore » as high velocity jets occur at the side walls. For weakly conducting walls, the side layers become more conducting than the side walls, and strong electric currents flow within these layers parallel to the magnetic field. As a consequence, the velocity jets are suppressed, and the core solution is only corrected by the viscous forces near the wall. The implementation of MHD in CFX is achieved.« less

Learning from Natural Nacre: Constructing Layered Polymer Composites with High Thermal Conductivity.

PubMed

Pan, Guiran; Yao, Yimin; Zeng, Xiaoliang; Sun, Jiajia; Hu, Jiantao; Sun, Rong; Xu, Jian-Bin; Wong, Ching-Ping

2017-09-27

Inspired by the microstructures of naturally layered and highly oriented materials, such as natural nacre, we report a thermally conductive polymer composite that consists of epoxy resin and Al 2 O 3 platelets deposited with silver nanoparticles (AgNPs). Owing to their unique two-dimensional structure, Al 2 O 3 platelets are stacked together via a hot-pressing technique, resulting in a brick-and-mortar structure, which is similar to the one of natural nacre. Moreover, the AgNPs deposited on the surfaces of the Al 2 O 3 platelets act as bridges that link the adjacent Al 2 O 3 platelets due to the reduced melting point of the AgNPs. As a result, the polymer composite with 50 wt % filler achieves a maximum thermal conductivity of 6.71 W m -1 K -1 . In addition, the small addition of AgNPs (0.6 wt %) minimally affects the electrical insulation of the composites. Our bioinspired approach will find uses in the design and fabrication of thermally conductive materials for thermal management in modern electronics.

Development of a 3D Graphene Electrode Dielectrophoretic Device

PubMed Central

Xie, Hongyu; Tewari, Radheshyam; Fukushima, Hiroyuki; Narendra, Jeffri; Heldt, Caryn; King, Julia; Minerick, Adrienne R.

2014-01-01

The design and fabrication of a novel 3D electrode microdevice using 50 µm thick graphene paper and 100 µm double sided tape is described. The protocol details the procedures to construct a versatile, reusable, multiple layer, laminated dielectrophoresis chamber. Specifically, six layers of 50 µm x 0.7 cm x 2 cm graphene paper and five layers of double sided tape were alternately stacked together, then clamped to a glass slide. Then a 700 μm diameter micro-well was drilled through the laminated structure using a computer-controlled micro drilling machine. Insulating properties of the tape layer between adjacent graphene layers were assured by resistance tests. Silver conductive epoxy connected alternate layers of graphene paper and formed stable connections between the graphene paper and external copper wire electrodes. The finished device was then clamped and sealed to a glass slide. The electric field gradient was modeled within the multi-layer device. Dielectrophoretic behaviors of 6 μm polystyrene beads were demonstrated in the 1 mm deep micro-well, with medium conductivities ranging from 0.0001 S/m to 1.3 S/m, and applied signal frequencies from 100 Hz to 10 MHz. Negative dielectrophoretic responses were observed in three dimensions over most of the conductivity-frequency space and cross-over frequency values are consistent with previously reported literature values. The device did not prevent AC electroosmosis and electrothermal flows, which occurred in the low and high frequency regions, respectively. The graphene paper utilized in this device is versatile and could subsequently function as a biosensor after dielectrophoretic characterizations are complete. PMID:24998694

Development of a 3D graphene electrode dielectrophoretic device.

PubMed

Xie, Hongyu; Tewari, Radheshyam; Fukushima, Hiroyuki; Narendra, Jeffri; Heldt, Caryn; King, Julia; Minerick, Adrienne R

2014-06-22

The design and fabrication of a novel 3D electrode microdevice using 50 µm thick graphene paper and 100 µm double sided tape is described. The protocol details the procedures to construct a versatile, reusable, multiple layer, laminated dielectrophoresis chamber. Specifically, six layers of 50 µm x 0.7 cm x 2 cm graphene paper and five layers of double sided tape were alternately stacked together, then clamped to a glass slide. Then a 700 μm diameter micro-well was drilled through the laminated structure using a computer-controlled micro drilling machine. Insulating properties of the tape layer between adjacent graphene layers were assured by resistance tests. Silver conductive epoxy connected alternate layers of graphene paper and formed stable connections between the graphene paper and external copper wire electrodes. The finished device was then clamped and sealed to a glass slide. The electric field gradient was modeled within the multi-layer device. Dielectrophoretic behaviors of 6 μm polystyrene beads were demonstrated in the 1 mm deep micro-well, with medium conductivities ranging from 0.0001 S/m to 1.3 S/m, and applied signal frequencies from 100 Hz to 10 MHz. Negative dielectrophoretic responses were observed in three dimensions over most of the conductivity-frequency space and cross-over frequency values are consistent with previously reported literature values. The device did not prevent AC electroosmosis and electrothermal flows, which occurred in the low and high frequency regions, respectively. The graphene paper utilized in this device is versatile and could subsequently function as a biosensor after dielectrophoretic characterizations are complete.

Nitridation-driven conductive Li4Ti5O12 for lithium ion batteries.

PubMed

Park, Kyu-Sung; Benayad, Anass; Kang, Dae-Joon; Doo, Seok-Gwang

2008-11-12

To modify oxide structure and introduce a thin conductive film on Li4Ti5O12, thermal nitridation was adopted for the first time. NH3 decomposes surface Li4Ti5O12 to conductive TiN at high temperature, and surprisingly, it also modifies the surface structure in a way to accommodate the single phase Li insertion and extraction. The electrochemically induced Li4+deltaTi5O12 with a TiN coating layer shows great electrochemical properties at high current densities.

Experimental and Computational Evaluation of Flush-Mounted, S-Duct Inlets

NASA Technical Reports Server (NTRS)

Berrier, Bobby L.; Allan, Brian G.

2004-01-01

A new high Reynolds number test capability for boundary layer ingesting inlets has been developed for the NASA Langley Research Center 0.3-Meter Transonic Cryogenic Tunnel. Using this new capability. an experimental investigation of four S-duct inlet configurations was conducted. A computational study of one of the inlets was also conducted using a Navier-Stokes solver. The objectives of this investigation were to: 1) develop a new high Reynolds number inlet test capability for flush-mounted inlets; 2) provide a database for CFD tool validation; 3) evaluate the performance of S-duct inlets with large amounts of boundary layer ingestion; and 4) provide a baseline inlet for future inlet flow-control studies. Tests were conducted at Mach numbers from 0.25 to 0.83. Reynolds numbers (based on duct exit diameter) from 5.1 million to a full-scale value of 13.9 million, and inlet mass-flow ratios from 0.39 to 1.58 depending on Mach number. Results of the experimental study indicate that inlet pressure recovery generally decreased and inlet distortion generally increased with increasing Mach number. Except at low Mach numbers, increasing inlet mass-flow increased pressure recovery and increased distortion. Increasing the amount of boundary layer ingestion or ingesting a boundary layer with a distorted profile decreased pressure recovery and increased distortion. Finally, increasing Reynolds number had almost no effect on inlet distortion but increased inlet recovery by about one-half percent at a Mach number near cruise. The computational results captured the inlet pressure recovery and distortion trends with Mach number and inlet mass-flow well: the reversal of the pressure recovery trend with increasing inlet mass-flow at low and high Mach numbers was predicted by CFD. However, CFD results were generally more pessimistic (larger losses) than measured experimentally.

Rolled-up inductor structure for a radiofrequency integrated circuit (RFIC)

DOEpatents

Li, Xiuling; Huang, Wen; Ferreira, Placid M.; Yu, Xin

2015-12-29

A rolled-up inductor structure for a radiofrequency integrated circuit (RFIC) comprises a multilayer sheet in a rolled configuration comprising multiple turns about a longitudinal axis. The multilayer sheet comprises a conductive pattern layer on a strain-relieved layer, and the conductive pattern layer comprises at least one conductive strip having a length extending in a rolling direction. The at least one conductive strip thereby wraps around the longitudinal axis in the rolled configuration. The conductive pattern layer may also comprise two conductive feed lines connected to the conductive strip for passage of electrical current therethrough. The conductive strip serves as an inductor cell of the rolled-up inductor structure.

Influence of mid-crustal rheology on the deformation behavior of continental crust in the continental subduction zone

NASA Astrophysics Data System (ADS)

Li, Fucheng; Sun, Zhen; Zhang, Jiangyang

2018-06-01

Although the presence of low-viscosity middle crustal layer in the continental crust has been detected by both geophysical and geochemical studies, its influence on the deformation behavior of continental crust during subduction remains poorly investigated. To illustrate the crustal deformation associated with layered crust during continental subduction, we conducted a suite of 2-D thermo-mechanical numerical studies with visco-brittle/plastic rheology based on finite-differences and marker-in-cell techniques. In the experiments, we established a three-layer crustal model with a quartz-rich middle crustal layer embedded between the upper and lower continental crust. Results show that the middle crustal layer determines the amount of the accreted upper crust, maximum subduction depth, and exhumation path of the subducted upper crust. By varying the initial effective viscosity and thickness of the middle crustal layer, the further effects can be summarized as: (1) a rheologically weaker and/or thicker middle crustal layer results in a larger percentage of the upper crust detaching from the underlying slab and accreting at the trench zone, thereby leading to more serious crustal deformation. The rest of the upper crust only subducts into the depths of high pressure (HP) conditions, causing the absence of ultra-high pressure (UHP) metamorphic rocks; (2) a rheologically stronger and/or thinner middle crustal layer favors the stable subduction of the continental crust, dragging the upper crust to a maximum depth of ∼100 km and forming UHP rocks; (3) the middle crustal layer flows in a ductile way and acts as an exhumation channel for the HP-UHP rocks in both situations. In addition, the higher convergence velocity decreases the amount of subducted upper crust. A detailed comparison of our modeling results with the Himalayan collisional belt are conducted. Our work suggests that the presence of low-viscosity middle crustal layer may be another possible mechanism for absence of UHP rocks in the southern Tibet.

Characterization of ultralow thermal conductivity in anisotropic pyrolytic carbon coating for thermal management applications

DOE PAGES

Wang, Yuzhou; Hurley, David H.; Luther, Erik Paul; ...

2017-12-11

Pyrolytic carbon (PyC) is an important material used in many applications including thermal management of electronic devices and structural stability of ceramic composites. Accurate measurement of physical properties of structures containing textured PyC layers with few-micrometer thickness poses new challenges. Here a laser-based thermoreflectance technique is used to measure thermal conductivity in a 30-μm-thick textured PyC layer deposited using chemical vapor deposition on the surface of spherical zirconia particles. Raman spectroscopy is used to confirm the graphitic nature and characterize microstructure of the deposited layer. Room temperature radial and circumferential thermal conductivities are found to be 0.28 W m –1more » K –1 and 11.5 W m –1 K –1, corresponding to cross-plane and in-plane conductivities of graphite. While the anisotropic ratio of the in-plane to cross-plane conductivities is smaller than previous results, the magnitude of the smallest conductivity is noticeably smaller than previously reported values for carbon materials and offers opportunities in thermal management applications. Very low in-plane and cross-plane thermal conductivities are attributed to strong grain boundary scattering, high defect concentration, and small inter-laminar porosity. Lastly, experimental results agree with the prediction of thermal transport model informed by the microstructure information revealed by Raman spectroscopy.« less

Characterization of ultralow thermal conductivity in anisotropic pyrolytic carbon coating for thermal management applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yuzhou; Hurley, David H.; Luther, Erik Paul

Pyrolytic carbon (PyC) is an important material used in many applications including thermal management of electronic devices and structural stability of ceramic composites. Accurate measurement of physical properties of structures containing textured PyC layers with few-micrometer thickness poses new challenges. Here a laser-based thermoreflectance technique is used to measure thermal conductivity in a 30-μm-thick textured PyC layer deposited using chemical vapor deposition on the surface of spherical zirconia particles. Raman spectroscopy is used to confirm the graphitic nature and characterize microstructure of the deposited layer. Room temperature radial and circumferential thermal conductivities are found to be 0.28 W m –1more » K –1 and 11.5 W m –1 K –1, corresponding to cross-plane and in-plane conductivities of graphite. While the anisotropic ratio of the in-plane to cross-plane conductivities is smaller than previous results, the magnitude of the smallest conductivity is noticeably smaller than previously reported values for carbon materials and offers opportunities in thermal management applications. Very low in-plane and cross-plane thermal conductivities are attributed to strong grain boundary scattering, high defect concentration, and small inter-laminar porosity. Lastly, experimental results agree with the prediction of thermal transport model informed by the microstructure information revealed by Raman spectroscopy.« less

Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

DOEpatents

Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

1991-01-01

A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires

NASA Astrophysics Data System (ADS)

Anaya, Julian; Rossi, Stefano; Alomari, Mohammed; Kohn, Erhard; Tóth, Lajos; Pécz, Béla; Kuball, Martin

2015-06-01

The thermal transport in polycrystalline diamond films near its nucleation region is still not well understood. Here, a steady-state technique to determine the thermal transport within the nano-crystalline diamond present at their nucleation site has been demonstrated. Taking advantage of silicon nanowires as surface temperature nano-sensors, and using Raman Thermography, the in-plane and cross-plane components of the thermal conductivity of ultra-thin diamond layers and their thermal barrier to the Si substrate were determined. Both components of the thermal conductivity of the nano-crystalline diamond were found to be well below the values of polycrystalline bulk diamond, with a cross-plane thermal conductivity larger than the in-plane thermal conductivity. Also a depth dependence of the lateral thermal conductivity through the diamond layer was determined. The results impact the design and integration of diamond for thermal management of AlGaN/GaN high power transistors and also show the usefulness of the nanowires as accurate nano-thermometers.

Electrical and thermal conduction in atomic layer deposition nanobridges down to 7 nm thickness.

PubMed

Yoneoka, Shingo; Lee, Jaeho; Liger, Matthieu; Yama, Gary; Kodama, Takashi; Gunji, Marika; Provine, J; Howe, Roger T; Goodson, Kenneth E; Kenny, Thomas W

2012-02-08

While the literature is rich with data for the electrical behavior of nanotransistors based on semiconductor nanowires and carbon nanotubes, few data are available for ultrascaled metal interconnects that will be demanded by these devices. Atomic layer deposition (ALD), which uses a sequence of self-limiting surface reactions to achieve high-quality nanolayers, provides an unique opportunity to study the limits of electrical and thermal conduction in metal interconnects. This work measures and interprets the electrical and thermal conductivities of free-standing platinum films of thickness 7.3, 9.8, and 12.1 nm in the temperature range from 50 to 320 K. Conductivity data for the 7.3 nm bridge are reduced by 77.8% (electrical) and 66.3% (thermal) compared to bulk values due to electron scattering at material and grain boundaries. The measurement results indicate that the contribution of phonon conduction is significant in the total thermal conductivity of the ALD films. © 2012 American Chemical Society

Method and closing pores in a thermally sprayed doped lanthanum chromite interconnection layer

DOEpatents

Singh, Prabhakar; Ruka, Roswell J.

1995-01-01

A dense, substantially gas-tight electrically conductive interconnection layer is formed on an air electrode structure of an electrochemical cell by (A) providing an air electrode surface; (B) forming on a selected portion of the electrode surface, a layer of doped LaCrO.sub.3 particles doped with an element or elements selected from Ca, Sr, Ba, Mg, Co, Ni, Al and mixtures thereof by thermal spraying doped LaCrO.sub.3 particles, either by plasma arc spraying or flame spraying; (C) depositing a mixture of CaO and Cr.sub.2 O.sub.3 on the surface of the thermally sprayed layer; and (D) heating the doped LaCrO.sub.3 layer coated with CaO and Cr.sub.2 O.sub.3 surface deposit at from about 1000.degree. C. to 1200.degree. C. to substantially close the pores, at least at a surface, of the thermally sprayed doped LaCrO.sub.3 layer. The result is a dense, substantially gas-tight, highly doped, electrically conductive interconnection material bonded to the electrode surface. A solid electrolyte layer can be applied to the nonselected portion of the air electrode. A fuel electrode can be applied to the solid electrolyte, to form an electrochemical cell, for example for generation of electrical power.

Method and closing pores in a thermally sprayed doped lanthanum chromite interconnection layer

DOEpatents

Singh, P.; Ruka, R.J.

1995-02-14

A dense, substantially gas-tight electrically conductive interconnection layer is formed on an air electrode structure of an electrochemical cell by (A) providing an air electrode surface; (B) forming on a selected portion of the electrode surface, a layer of doped LaCrO{sub 3} particles doped with an element or elements selected from Ca, Sr, Ba, Mg, Co, Ni, Al and mixtures thereof by thermal spraying doped LaCrO{sub 3} particles, either by plasma arc spraying or flame spraying; (C) depositing a mixture of CaO and Cr{sub 2}O{sub 3} on the surface of the thermally sprayed layer; and (D) heating the doped LaCrO{sub 3} layer coated with CaO and Cr{sub 2}O{sub 3} surface deposit at from about 1,000 C to 1,200 C to substantially close the pores, at least at a surface, of the thermally sprayed doped LaCrO{sub 3} layer. The result is a dense, substantially gas-tight, highly doped, electrically conductive interconnection material bonded to the electrode surface. A solid electrolyte layer can be applied to the nonselected portion of the air electrode. A fuel electrode can be applied to the solid electrolyte, to form an electrochemical cell, for example for generation of electrical power. 5 figs.

Interface Energy Coupling between β-tungsten Nanofilm and Few-layered Graphene

DOE PAGES

Han, Meng; Yuan, Pengyu; Liu, Jing; ...

2017-09-22

We report the thermal conductance induced by few-layered graphene (G) sandwiched between β-phase tungsten (β-W) films of 15, 30 and 40 nm thickness. Our differential characterization is able to distinguish the thermal conductance of β-W film and β-W/G interface. The cross-plane thermal conductivity (k) of β-W films is determined at 1.69~2.41 Wm -1K -1 which is much smaller than that of α-phase tungsten (174 Wm -1K -1). This small value is consistent with the large electrical resistivity reported for β-W in literatures and in this work. The β-W/β-W and β-W/G interface thermal conductance (GW/W and GW/G) are characterized and comparedmore » using multilayered β-W films with and without sandwiched graphene layers. The average GW/W is found to be at 280 MW m -2K -1. GW/G features strong variation from sample to sample, and has a lower-limit of 84 MW m -2K -1, taking into consideration of the uncertainties. This is attributed to possible graphene structure damage and variation during graphene transfer and W sputtering. The difference between G2W/G and GW/W uncovers the finite thermal resistance induced by the graphene layer. Compared with up-to-date reported graphene interface thermal conductance, the β-W/G interface is at the high end in terms of local energy coupling.« less

Interface Energy Coupling between β-tungsten Nanofilm and Few-layered Graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Meng; Yuan, Pengyu; Liu, Jing

We report the thermal conductance induced by few-layered graphene (G) sandwiched between β-phase tungsten (β-W) films of 15, 30 and 40 nm thickness. Our differential characterization is able to distinguish the thermal conductance of β-W film and β-W/G interface. The cross-plane thermal conductivity (k) of β-W films is determined at 1.69~2.41 Wm -1K -1 which is much smaller than that of α-phase tungsten (174 Wm -1K -1). This small value is consistent with the large electrical resistivity reported for β-W in literatures and in this work. The β-W/β-W and β-W/G interface thermal conductance (GW/W and GW/G) are characterized and comparedmore » using multilayered β-W films with and without sandwiched graphene layers. The average GW/W is found to be at 280 MW m -2K -1. GW/G features strong variation from sample to sample, and has a lower-limit of 84 MW m -2K -1, taking into consideration of the uncertainties. This is attributed to possible graphene structure damage and variation during graphene transfer and W sputtering. The difference between G2W/G and GW/W uncovers the finite thermal resistance induced by the graphene layer. Compared with up-to-date reported graphene interface thermal conductance, the β-W/G interface is at the high end in terms of local energy coupling.« less

Ultrathin Layered SnSe Nanoplates for Low Voltage, High-Rate, and Long-Life Alkali-Ion Batteries.

PubMed

Wang, Wei; Li, Peihao; Zheng, Henry; Liu, Qiao; Lv, Fan; Wu, Jiandong; Wang, Hao; Guo, Shaojun

2017-12-01

2D electrode materials with layered structures have shown huge potential in the fields of lithium- and sodium-ion batteries. However, their poor conductivity limits the rate performance and cycle stability of batteries. Herein a new colloid chemistry strategy is reported for making 2D ultrathin layered SnSe nanoplates (SnSe NPs) for achieving more efficient alkali-ion batteries. Due to the effect of weak Van der Waals forces, each semiconductive SnSe nanoplate stacks on top of each other, which can facilitate the ion transfer and accommodate volume expansion during the charge and discharge process. This unique structure as well as the narrow-bandgap semiconductor property of SnSe simultaneously meets the requirements of achieving fast ionic and electronic conductivities for alkali-ion batteries. They exhibit high capacity of 463.6 mAh g -1 at 0.05 A g -1 for Na-ion batteries and 787.9 mAh g -1 at 0.2 A g -1 for Li-ion batteries over 300 cycles, and also high stability for alkali-ion batteries. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Correlation of heat transfer for the zero pressure gradient hypersonic laminar boundary layer for several gases

NASA Technical Reports Server (NTRS)

Cook, W. J.

1973-01-01

A theoretical study of heat transfer for zero pressure gradient hypersonic laminar boundary layers for various gases with particular application to the flows produced in an expansion tube facility was conducted. A correlation based on results obtained from solutions to the governing equations for five gases was formulated. Particular attention was directed toward the laminar boundary layer shock tube splitter plates in carbon dioxide flows generated by high speed shock waves. Computer analysis of the splitter plate boundary layer flow provided information that is useful in interpreting experimental data obtained in shock tube gas radiation studies.

Deposition and thermal characterization of nano-structured aluminum nitride thin film on Cu-W substrate for high power light emitting diode package.

PubMed

Cho, Hyun Min; Kim, Min-Sun

2014-08-01

In this study, we developed AlN thick film on metal substrate for hybrid type LED package such as chip on board (COB) using metal printed circuit board (PCB). Conventional metal PCB uses ceramic-polymer composite as electrical insulating layer. Thermal conductivities of such type dielectric film are typically in the range of 1~4 W/m · K depending on the ceramic filler. Also, Al or Cu alloy are mainly used for metal base for high thermal conduction to dissipate heat from thermal source mounted on metal PCB. Here we used Cu-W alloy with low thermal expansion coefficient as metal substrate to reduce thermal stress between insulating layer and base metal. AlN with polyimide (PI) powder were used as starting materials for deposition. We could obtain very high thermal conductivity of 28.3 W/m · K from deposited AlN-PI thin film by AlN-3 wt% PI powder. We made hybrid type high power LED package using AlN-PI thin film. We tested thermal performance of this film by thermal transient measurement and compared with conventional metal PCB substrate.

Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides

PubMed Central

Wu, Zefei; Xu, Shuigang; Lu, Huanhuan; Khamoshi, Armin; Liu, Gui-Bin; Han, Tianyi; Wu, Yingying; Lin, Jiangxiazi; Long, Gen; He, Yuheng; Cai, Yuan; Yao, Yugui; Zhang, Fan; Wang, Ning

2016-01-01

In few-layer transition metal dichalcogenides (TMDCs), the conduction bands along the ΓK directions shift downward energetically in the presence of interlayer interactions, forming six Q valleys related by threefold rotational symmetry and time reversal symmetry. In even layers, the extra inversion symmetry requires all states to be Kramers degenerate; whereas in odd layers, the intrinsic inversion asymmetry dictates the Q valleys to be spin-valley coupled. Here we report the transport characterization of prominent Shubnikov-de Hass (SdH) oscillations and the observation of the onset of quantum Hall plateaus for the Q-valley electrons in few-layer TMDCs. Universally in the SdH oscillations, we observe a valley Zeeman effect in all odd-layer TMDC devices and a spin Zeeman effect in all even-layer TMDC devices, which provide a crucial information for understanding the unique properties of multi-valley band structures of few-layer TMDCs. PMID:27651106

Organic electrochemical transistors for cell-based impedance sensing

NASA Astrophysics Data System (ADS)

Rivnay, Jonathan; Ramuz, Marc; Leleux, Pierre; Hama, Adel; Huerta, Miriam; Owens, Roisin M.

2015-01-01

Electrical impedance sensing of biological systems, especially cultured epithelial cell layers, is now a common technique to monitor cell motion, morphology, and cell layer/tissue integrity for high throughput toxicology screening. Existing methods to measure electrical impedance most often rely on a two electrode configuration, where low frequency signals are challenging to obtain for small devices and for tissues with high resistance, due to low current. Organic electrochemical transistors (OECTs) are conducting polymer-based devices, which have been shown to efficiently transduce and amplify low-level ionic fluxes in biological systems into electronic output signals. In this work, we combine OECT-based drain current measurements with simultaneous measurement of more traditional impedance sensing using the gate current to produce complex impedance traces, which show low error at both low and high frequencies. We apply this technique in vitro to a model epithelial tissue layer and show that the data can be fit to an equivalent circuit model yielding trans-epithelial resistance and cell layer capacitance values in agreement with literature. Importantly, the combined measurement allows for low biases across the cell layer, while still maintaining good broadband signal.

Rational design of a tripartite-layered TiO2 photoelectrode: a candidate for enhanced power conversion efficiency in dye sensitized solar cells.

PubMed

Khan, Javid; Gu, Jiuwang; He, Shiman; Li, Xiaohui; Ahmed, Gulzar; Liu, Zhongwu; Akhtar, Muhammad Nadeem; Mai, Wenjie; Wu, Mingmei

2017-07-20

A tri-layered photoelectrode for dye-sensitized solar cells (DSSCs) is assembled using single crystal hollow TiO 2 nanoparticles (HTNPs), sub-micro hollow TiO 2 mesospheres (SHTMSs) and hierarchical TiO 2 microspheres (HTMSs). The bottom layer composed of single crystal hollow TiO 2 nanoparticles serves to absorb dye molecules, harvest light due to its hollow structure and keep a better mechanical contact with FTO conducting glass; the middle layer consisting of sub-micro hollow mesospheres works as a multifunctional layer due to its high dye adsorption ability, strong light trapping and scattering ability and slow recombination rates; and the top layer consisting of hierarchical microspheres enhances light scattering. The DSSCs made of photoanodes with a tripartite-layer structure (Film 4) show a superior photoconversion efficiency (PCE) of 9.24%, which is 7.4% higher than a single layered photoanode composed of HTNPs (Film 1: 8.90%), 4.6% higher than a double layer-based electrode consisting of HTNPs and SHTMSs (Film 2: 9.03%) and 2.6% higher than a double layer-based electrode made of HTNPs and HTMSs (Film 3: 9.11%). The significant improvements in the PCE for tri-layered TiO 2 photoanodes are mainly because of the combined effects of their higher light scattering ability, long electron lifetime, fast electron transport rate, efficient charge collection and a considerable surface area with high dye-loading capability. This study confirms that the facile tri-layered photoanode is an interesting structure for high-efficiency DSSCs.

Reduction of FeO contents in sinter under high bed operation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fujii, K.; Hazama, K.; Hoshikuma, Y.

1996-12-31

High-bed operation (bed height more than 700 mm) is currently being carried out at the Kure No. 1 sintering plant. Before initiating this high-bed operation, the authors conducted sinter pot tests at various bed heights to investigate the effect of bed height on sintering. The following results were obtained from these pot tests: Heightening of the sinter bed increased yield at the upper layer, but at the lower layer, the yield reached a maximum value at a certain bed height. From observation of the sinter cakes, the reduction in yield is attributed to uneven burn caused by surplus heat atmore » the lower layers. Therefore, when high-bed operation is carried out, reduction of the burning energy (reduction of the FeO content in the sinter) is required. This high-bed operation with lower FeO content has enabled the company to reduce fuel consumption and SiO{sub 2} content, while maintaining high yield and high sinter quality.« less

Monolithic quasi-solid-state dye-sensitized solar cells based on graphene-modified mesoscopic carbon-counter electrodes

NASA Astrophysics Data System (ADS)

Rong, Yaoguang; Han, Hongwei

2013-01-01

A monolithic quasi-solid-state dye-sensitized solar cell (DSSC) based on graphene-modified mesoscopic carbon-counter electrode is developed. A TiO2-working electrode layer, ZrO2 spacer layer, and carbon counter electrode layer were constructed on a single conducting glass substrate by screen printing. The quasi-solid-state polymer gel electrolyte employed a polymer composite as the gelator, and effectively infiltrated the porous layers. Fabricated with normal carbon-counter electrode (NC-CE) containing graphite and carbon black, the DSSC had a power conversion efficiency (PCE) of 5.09% with the fill factor of 0.63 at 100 mW cm-2 AM1.5 illumination. When the NC-CE was modified with graphene sheets, the PCE and fill factor were enhanced to 6.27% and 0.71, respectively. This improvement indicates excellent conductivity and high electrocatalytic activity of the graphene sheets, which have been considered as a promising platinum-free electrode material for DSSCs.

Wrapped optoelectronic devices and methods for making same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Curran, Seamus; Dias, Sampath; Alley, Nigel

In various embodiments, optoelectronic devices are described herein. The optoelectronic device may include an optoelectronic cell arranged so as to wrap around a central axis wherein the cell includes a first conductive layer, a semi-conductive layer disposed over and in electrical communication with the first conductive layer, and a second conductive layer disposed over and in electrical communication with the semi-conductive layer. In various embodiments, methods for making optoelectronic devices are described herein. The methods may include forming an optoelectronic cell while flat and wrapping the optoelectronic cell around a central axis. The optoelectronic devices may be photovoltaic devices. Alternatively,more » the optoelectronic devices may be organic light emitting diodes.« less

Inert electrode connection

DOEpatents

Weyand, J.D.; Woods, R.W.; DeYoung, D.H.; Ray, S.P.

1985-02-19

An inert electrode connection is disclosed wherein a layer of inert electrode material is bonded to a layer of conductive material by providing at least one intermediate layer of material therebetween comprising a predetermined ratio of inert material to conductive material. In a preferred embodiment, the connection is formed by placing in a die a layer of powdered inert material, at least one layer of a mixture of powdered inert material and conductive material, and a layer of powdered conductive material. The connection is then formed by pressing the material at 15,000--20,000 psi to form a powder compact and then densifying the powder compact in an inert or reducing atmosphere at a temperature of 1,200--1,500 C. 5 figs.

Synthesis and discharge performances of NiCl2 by surface modification of carbon coating as cathode material of thermal battery

NASA Astrophysics Data System (ADS)

Jin, Chuanyu; Zhou, Lingping; Fu, Licai; Zhu, Jiajun; Li, Deyi

2017-04-01

The high solubility in molten salt and low conductivity of NiCl2, compared with traditional FeS2 and CoS2, have become the restrictions for its extensive application in cathode materials of thermal batteries. In this study, carbon coated NiCl2 cathode is successfully fabricated by the carbonization of stearic acid. The high specific energy of 641 Wh kg-1 at current densities of 0.5 A cm-2 are observed for the carbon coated NiCl2 thermal batteries, which is higher than the pure NiCl2 with 475 Wh kg-1. The high specific energies and high-current discharge ability are attribute to the graphite and amorphous carbon layers on the surface of NiCl2 crystalline, which were detected by TEM after carbonization. The graphite layers can improve the conductivity of NiCl2. Meanwhile the coated carbon structure could reduce the solubility of NiCl2 in molten salt.

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Willems van Beveren, L. H., E-mail: laurensw@unimelb.edu.au; Bowers, H.; Ganesan, K.

2016-06-14

Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here, we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at. %. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to mapmore » out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.« less

Fabrication of hierarchical porous hollow carbon spheres with few-layer graphene framework and high electrochemical activity for supercapacitor

NASA Astrophysics Data System (ADS)

Chen, Jing; Hong, Min; Chen, Jiafu; Hu, Tianzhao; Xu, Qun

2018-06-01

Porous amorphous carbons with large number of defects and dangling bonds indicate great potential application in energy storage due to high specific surface area and strong adsorption properties, but poor conductivity and pore connection limit their practical application. Here few-layer graphene framework with high electrical conductivity is embedded and meanwhile hierarchical porous structure is constructed in amorphous hollow carbon spheres (HCSs) by catalysis of Fe clusters of angstrom scale, which are loaded in the interior of crosslinked polystyrene via a novel method. These unique HCSs effectively integrate the inherent properties from two-dimensional sp2-hybridized carbon, porous amorphous carbon, hierarchical pore structure and thin shell, leading to high specific capacitance up to 561 F g-1 at a current density of 0.5 A g-1 as an electrode of supercapacitor with excellent recyclability, which is much higher than those of other reported porous carbon materials up to present.

Opto-electronic properties of P-doped nc-Si–QD/a-SiC:H thin films as foundation layer for all-Si solar cells in superstrate configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kar, Debjit; Das, Debajyoti, E-mail: erdd@iacs.res.in

2016-07-14

With the advent of nc-Si solar cells having improved stability, the efficient growth of nc-Si i-layer of the top cell of an efficient all-Si solar cell in the superstrate configuration prefers nc-Si n-layer as its substrate. Accordingly, a wide band gap and high conducting nc-Si alloy material is a basic requirement at the n-layer. Present investigation deals with the development of phosphorous doped n-type nanocrystalline silicon quantum dots embedded in hydrogenated amorphous silicon carbide (nc-Si–QD/a-SiC:H) hetero-structure films, wherein the optical band gap can be widened by the presence of Si–C bonds in the amorphous matrix and the embedded high densitymore » tiny nc-Si–QDs could provide high electrical conductivity, particularly in P-doped condition. The nc-Si–QDs simultaneously facilitate further widening of the optical band gap by virtue of the associated quantum confinement effect. A complete investigation has been made on the electrical transport phenomena involving charge transfer by tunneling and thermionic emission prevailing in n-type nc-Si–QD/a-SiC:H thin films. Their correlation with different phases of the specific heterostructure has been carried out for detailed understanding of the material, in order to improve its device applicability. The n-type nc-Si–QD/a-SiC:H films exhibit a thermally activated electrical transport above room temperature and multi-phonon hopping (MPH) below room temperature, involving defects in the amorphous phase and the grain-boundary region. The n-type nc-Si–QD/a-SiC:H films grown at ∼300 °C, demonstrating wide optical gap ∼1.86–1.96 eV and corresponding high electrical conductivity ∼4.5 × 10{sup −1}–1.4 × 10{sup −2} S cm{sup −1}, deserve to be an effective foundation layer for the top nc-Si sub-cell of all-Si solar cells in n-i-p structure with superstrate configuration.« less

Opto-electronic properties of P-doped nc-Si-QD/a-SiC:H thin films as foundation layer for all-Si solar cells in superstrate configuration

NASA Astrophysics Data System (ADS)

Kar, Debjit; Das, Debajyoti

2016-07-01

With the advent of nc-Si solar cells having improved stability, the efficient growth of nc-Si i-layer of the top cell of an efficient all-Si solar cell in the superstrate configuration prefers nc-Si n-layer as its substrate. Accordingly, a wide band gap and high conducting nc-Si alloy material is a basic requirement at the n-layer. Present investigation deals with the development of phosphorous doped n-type nanocrystalline silicon quantum dots embedded in hydrogenated amorphous silicon carbide (nc-Si-QD/a-SiC:H) hetero-structure films, wherein the optical band gap can be widened by the presence of Si-C bonds in the amorphous matrix and the embedded high density tiny nc-Si-QDs could provide high electrical conductivity, particularly in P-doped condition. The nc-Si-QDs simultaneously facilitate further widening of the optical band gap by virtue of the associated quantum confinement effect. A complete investigation has been made on the electrical transport phenomena involving charge transfer by tunneling and thermionic emission prevailing in n-type nc-Si-QD/a-SiC:H thin films. Their correlation with different phases of the specific heterostructure has been carried out for detailed understanding of the material, in order to improve its device applicability. The n-type nc-Si-QD/a-SiC:H films exhibit a thermally activated electrical transport above room temperature and multi-phonon hopping (MPH) below room temperature, involving defects in the amorphous phase and the grain-boundary region. The n-type nc-Si-QD/a-SiC:H films grown at ˜300 °C, demonstrating wide optical gap ˜1.86-1.96 eV and corresponding high electrical conductivity ˜4.5 × 10-1-1.4 × 10-2 S cm-1, deserve to be an effective foundation layer for the top nc-Si sub-cell of all-Si solar cells in n-i-p structure with superstrate configuration.

Evaluation of Graphene/WO3 and Graphene/CeO x Structures as Electrodes for Supercapacitor Applications

NASA Astrophysics Data System (ADS)

Chaitoglou, Stefanos; Amade, Roger; Bertran, Enric

2017-12-01

The combination of graphene with transition metal oxides can result in very promising hybrid materials for use in energy storage applications thanks to its intriguing properties, i.e., highly tunable surface area, outstanding electrical conductivity, good chemical stability, and excellent mechanical behavior. In the present work, we evaluate the performance of graphene/metal oxide (WO3 and CeO x ) layered structures as potential electrodes in supercapacitor applications. Graphene layers were grown by chemical vapor deposition (CVD) on copper substrates. Single and layer-by-layer graphene stacks were fabricated combining graphene transfer techniques and metal oxides grown by magnetron sputtering. The electrochemical properties of the samples were analyzed and the results suggest an improvement in the performance of the device with the increase in the number of graphene layers. Furthermore, deposition of transition metal oxides within the stack of graphene layers further improves the areal capacitance of the device up to 4.55 mF/cm2, for the case of a three-layer stack. Such high values are interpreted as a result of the copper oxide grown between the copper substrate and the graphene layer. The electrodes present good stability for the first 850 cycles before degradation.

An Experimental and Modeling Synthesis to Determine Seasonality of Hydraulic Redistribution in Semi-arid Region with Multispecies Vegetation Interaction

NASA Astrophysics Data System (ADS)

Lee, E.; Kumar, P.; Barron-Gafford, G.; Scott, R. L.

2016-12-01

A key challenge in critical zone science is to understand and predict the interaction between aboveground and belowground eco-hydrologic processes. Roots play an important role in linking aboveground plant ecophysiological processes, such as carbon, water and energy exchange with the atmosphere, and the belowground processes associated with soil moisture and carbon, and microbial and nutrient dynamics. This study analyzes aboveground and belowground interaction through hydraulic redistribution (HR), a phenomenon that roots serve as preferential pathways for water movement from wet to dry soil layers. HR process is simulated by multi-layer canopy model and compared with relative measurements from the field to study effect of HR on different plant species where Posopis velutina Woot. (velvet mesquite) and understory co-exist and share resources. The study site is one of Ameriflux sites: Santa Rita Mesquite savanna, Arizona, with a distinct dry season that facilitates occurrence of HR. We analyzed how two vegetation species share and utilize the limited amount of water by HR in both dry and wet seasons. During dry season, water moves from deep layer to shallow layer through roots and hydraulic lift (HL) occurs. During wet season, water moves from shallow layer to deep layer through roots and hydraulic descent (HD) occurs. About 40% of precipitation is transferred to deep soil layer with HD and 15% of that is transported back to shallow soil layer with HL in dry season. Assuming water supplied through HL supports evapotranspiration of plants, HL supports 10% of evapotranspiration. The ratio of mesquite and understory root conductivities is an important factor that determines how two plant species interact and share resources in water-limited environment. The sensitivity analysis of root conductivities suggests that high understory root conductivity facilitates water transported by HR and increases mesquite transpiration and photosynthesis. Understory transpiration and photosynthesis show increase with HR only in dry season when water is supplied to shallow layer through HL. With low understory root conductivity, understory looses the competition for water against mesquite and show decrease in transpiration and photosynthetic fluxes when HR is allowed.

Marine magnetotellurics imaged no distinct plume beneath the Tristan da Cunha hotspot in the southern Atlantic Ocean

NASA Astrophysics Data System (ADS)

Baba, Kiyoshi; Chen, Jin; Sommer, Malte; Utada, Hisashi; Geissler, Wolfram H.; Jokat, Wilfried; Jegen, Marion

2017-10-01

The Tristan da Cunha (TDC) is a volcanic island located above a prominent hotspot in the Atlantic Ocean. Many geological and geochemical evidences support a deep origin of the mantle material feeding the hotspot. However, the existence of a plume has not been confirmed as an anomalous structure in the mantle resolved by geophysical data because of lack of the observations in the area. Marine magnetotelluric and seismological observations were conducted in 2012-2013 to examine the upper mantle structure adjacent to TDC. The electrical conductivity structure of the upper mantle beneath the area was investigated in this study. Three-dimensional inversion analysis depicted a high conductive layer at 120 km depth but no distinct plume-like vertical structure. The conductive layer is mostly flat independently on seafloor age and bulges upward beneath the lithospheric segment where the TDC islands are located compared to younger segment south of the TDC Fracture Zone, while the bathymetry is rather deeper than prediction for the northern segment. The apparent inconsistency between the absence of vertical structure in this study and geochemical evidences on deep origin materials suggests that either the upwelling is too small and/or weak to be resolved by the current data set or that the upwelling takes place elsewhere outside of the study area. Other observations suggest that 1) the conductivity of the upper mantle can be explained by the fact that the mantle above the high conductivity layer is depleted in volatiles as the result of partial melting beneath the spreading ridge, 2) the potential temperature of the segments north of the TDC Fracture Zone is lower than that of the southern segment at least during the past 30 Myr.

All diamond self-aligned thin film transistor

DOEpatents

Gerbi, Jennifer [Champaign, IL

2008-07-01

A substantially all diamond transistor with an electrically insulating substrate, an electrically conductive diamond layer on the substrate, and a source and a drain contact on the electrically conductive diamond layer. An electrically insulating diamond layer is in contact with the electrically conductive diamond layer, and a gate contact is on the electrically insulating diamond layer. The diamond layers may be homoepitaxial, polycrystalline, nanocrystalline or ultrananocrystalline in various combinations.A method of making a substantially all diamond self-aligned gate transistor is disclosed in which seeding and patterning can be avoided or minimized, if desired.

3D polyaniline porous layer anchored pillared graphene sheets: enhanced interface joined with high conductivity for better charge storage applications.

PubMed

Sekar, Pandiaraj; Anothumakkool, Bihag; Kurungot, Sreekumar

2015-04-15

Here, we report synthesis of a 3-dimensional (3D) porous polyaniline (PANI) anchored on pillared graphene (G-PANI-PA) as an efficient charge storage material for supercapacitor applications. Benzoic acid (BA) anchored graphene, having spatially separated graphene layers (G-Bz-COOH), was used as a structure controlling support whereas 3D PANI growth has been achieved by a simple chemical oxidation of aniline in the presence of phytic acid (PA). The BA groups on G-Bz-COOH play a critical role in preventing the restacking of graphene to achieve a high surface area of 472 m(2)/g compared to reduced graphene oxide (RGO, 290 m(2)/g). The carboxylic acid (-COOH) group controls the rate of polymerization to achieve a compact polymer structure with micropores whereas the chelating nature of PA plays a crucial role to achieve the 3D growth pattern of PANI. This type of controlled interplay helps G-PANI-PA to achieve a high conductivity of 3.74 S/cm all the while maintaining a high surface area of 330 m(2)/g compared to PANI-PA (0.4 S/cm and 60 m(2)/g). G-PANI-PA thus conceives the characteristics required for facile charge mobility during fast charge-discharge cycles, which results in a high specific capacitance of 652 F/g for the composite. Owing to the high surface area along with high conductivity, G-PANI-PA displays a stable specific capacitance of 547 F/g even with a high mass loading of 3 mg/cm(2), an enhanced areal capacitance of 1.52 F/cm(2), and a volumetric capacitance of 122 F/cm(3). The reduced charge-transfer resistance (RCT) of 0.67 Ω displayed by G-PANI-PA compared to pure PANI (0.79 Ω) stands out as valid evidence of the improved charge mobility achieved by the system by growing the 3D PANI layer along the spatially separated layers of the graphene sheets. The low RCT helps the system to display capacitance retention as high as 65% even under a high current dragging condition of 10 A/g. High charge/discharge rates and good cycling stability are the other highlights of the supercapacitor system derived from this composite material.

High efficiency, low cost, thin film silicon solar cell design and method for making

DOEpatents

Sopori, Bhushan L.

2001-01-01

A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

High efficiency low cost thin film silicon solar cell design and method for making

DOEpatents

Sopori, Bhushan L.

1999-01-01

A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

Electrical insulator assembly with oxygen permeation barrier

DOEpatents

Van Der Beck, Roland R.; Bond, James A.

1994-01-01

A high-voltage electrical insulator (21) for electrically insulating a thermoelectric module (17) in a spacecraft from a niobium-1% zirconium alloy wall (11) of a heat exchanger (13) filled with liquid lithium (16) while providing good thermal conductivity between the heat exchanger and the thermoelectric module. The insulator (21) has a single crystal alumina layer (SxAl.sub.2 O.sub.3, sapphire) with a niobium foil layer (32) bonded thereto on the surface of the alumina crystal (26) facing the heat exchanger wall (11), and a molybdenum layer (31) bonded to the niobium layer (32) to act as an oxygen permeation barrier to preclude the oxygen depleting effects of the lithium from causing undesirable niobium-aluminum intermetallic layers near the alumina-niobium interface.

Performance improvement of organic thin film transistors by using active layer with sandwich structure

NASA Astrophysics Data System (ADS)

Ni, Yao; Zhou, Jianlin; Kuang, Peng; Lin, Hui; Gan, Ping; Hu, Shengdong; Lin, Zhi

2017-08-01

We report organic thin film transistors (OTFTs) with pentacene/fluorinated copper phthalo-cyanine (F16CuPc)/pentacene (PFP) sandwich configuration as active layers. The sandwich devices not only show hole mobility enhancement but also present a well control about threshold voltage and off-state current. By investigating various characteristics, including current-voltage hysteresis, organic film morphology, capacitance-voltage curve and resistance variation of active layers carefully, it has been found the performance improvement is mainly attributed to the low carrier traps and the higher conductivity of the sandwich active layer due to the additional induced carriers in F16CuPc/pentacene. Therefore, using proper multiple active layer is an effective way to gain high performance OTFTs.

Carbide-derived carbon (CDC) linear actuator properties in combination with conducting polymers

NASA Astrophysics Data System (ADS)

Kiefer, Rudolf; Aydemir, Nihan; Torop, Janno; Kilmartin, Paul A.; Tamm, Tarmo; Kaasik, Friedrich; Kesküla, Arko; Travas-Sejdic, Jadranka; Aabloo, Alvo

2014-03-01

Carbide-derived Carbon (CDC) material is applied for super capacitors due to their nanoporous structure and their high charging/discharging capability. In this work we report for the first time CDC linear actuators and CDC combined with polypyrrole (CDC-PPy) in ECMD (Electrochemomechanical deformation) under isotonic (constant force) and isometric (constant length) measurements in aqueous electrolyte. CDC-PPy actuators showing nearly double strain under cyclic voltammetric and square wave potential measurements in comparison to CDC linear actuators. The new material is investigated by SEM (scanning electron microscopy) and EDX (energy dispersive X-ray analysis) to reveal how the conducting polymer layer and the CDC layer interfere together.

The 1980 land cover for the Puget Sound region

NASA Technical Reports Server (NTRS)

Shinn, R. D.; Westerlund, F. V.; Eby, J. R.

1982-01-01

Both LANDSAT imagery and the video information communications and retrieval software were used to develop a land cover classifiction of the Puget Sound of Washington. Planning agencies within the region were provided with a highly accurate land cover map registered to the 1980 census tracts which could subsequently be incorporated as one data layer in a multi-layer data base. Many historical activities related to previous land cover mapping studies conducted in the Puget Sound region are summarized. Valuable insight into conducting a project with a large community of users and in establishing user confidence in a multi-purpose land cover map derived from LANDSAT is provided.

The Thermal Conductivity of Granular Materials as a Function of Grain Size Distribution and Gas Pressure

NASA Astrophysics Data System (ADS)

Hütter, Erika S.; Kömle, Norbert I.

2007-08-01

Many planetary bodies - in particular those with no or thin atmospheres - are covered by so-called regolith layers which usually constitute the uppermost metres of their surfaces. Examples are the Moon, the icy satellites of the outer solar system, asteroids and comets. The thermal conductivity of these surface layers controls to a high extent the energy balance of the body as a whole. Under low pressure conditions the effective thermal conductivity of granular materials is known to be very low, because the mutual contact area contact between individual particles is small. Therefore regolith surface layers are acting as thermal insulators. Up to now only a few thermal conductivity measurements in an extraterrestrial environment have been carried out, namely on the Moon in the frame of the Apollo Moon Lander missions. For the future several missions involving landers on asteroids, comets, and the Moon are planned by various space agencies. Thus the development of reliable instruments for the measurement of the thermal properties of regolith is of high interest. For this purpose thermal conductivity measurements with various regolith analogue materials under low pressure conditions need to be done. In order to contribute to this goal, we have performed a series of experiments using glass beads with various size distributions as analogue materials. To sort out the influence of the environmental gas pressure on the effective thermal conductivity each sample was embedded into a nitrogen atmosphere and the pressure was systematically varied from 10-4mbar (high vacuum range) up to 1 bar. The grain sizes used for the glass spheres were in the range from 0.1 mm to 4.3 mm. Additionally a mixture of different grain sizes was analysed. We report on the results of thermal conductivity measurements obtained for the different size fractions as a function of gas pressure. Our results indicate a strong influence of both the gas pressure and the grain size on the value of the thermal conductivity of the glass beads samples. For all cases measured a decrease of the pressure led to a corresponding decrease of the thermal conductivity. In the high vacuum conditions it was found to be approximately 30 times smaller than under normal atmospheric pressure. The strongest decay occurs in the pressure range from 102 down to 10-1mbar. At lower pressures no significant dependence of the thermal conductivity on the gas pressure was observed. The relation between the used grain sizes and the thermal conductivity was found to be linear.

Low intrinsic c-axis thermal conductivity in PVD grown epitaxial Sb2Te3 films

NASA Astrophysics Data System (ADS)

Rieger, F.; Kaiser, K.; Bendt, G.; Roddatis, V.; Thiessen, P.; Schulz, S.; Jooss, C.

2018-05-01

Accurate determination and comprehensive understanding of the intrinsic c-axis thermal conductivity κc of thermoelectric layered Sb2Te3 is of high importance for the development of strategies to optimize the figure of merit in thin film devices via heterostructures and defect engineering. We present here high precision measurements of κc of epitaxial Sb2Te3 thin films on Al2O3 substrates grown by physical vapor deposition in the temperature range of 100 K to 300 K. The Kapitza resistances of the involved interfaces have been determined and subtracted from the film data, allowing access to the intrinsic thermal conductivity of single crystalline Sb2Te3. At room temperature, we obtain κc = 1.9 W/m K, being much smaller than the in-plane thermal conductivity of κa b = 5 W/m K and even lower than the thermal conductivity of nano crystalline films of κnc ≈ 2.0-2.6 W/m K published by Park et al. [Nanoscale Res. Lett. 9, 96 (2014)]. High crystallinity and very low defect concentration of the films were confirmed by x-ray diffraction and high resolution transmission electron microscopy. Our data reveal that the phonon mean free path lm f p(" separators="|T ) is not limited by defect scattering and is of intrinsic nature, i.e., due to phonon-phonon scattering similar to other soft van der Waals type bonded layered systems.

Nanostructured pseudocapacitive materials decorated 3D graphene foam electrodes for next generation supercapacitors.

PubMed

Patil, Umakant; Lee, Su Chan; Kulkarni, Sachin; Sohn, Ji Soo; Nam, Min Sik; Han, Suhyun; Jun, Seong Chan

2015-04-28

Nowadays, advancement in performance of proficient multifarious electrode materials lies conclusively at the core of research concerning energy storage devices. To accomplish superior capacitance performance the requirements of high capacity, better cyclic stability and good rate capability can be expected from integration of electrochemical double layer capacitor based carbonaceous materials (high power density) and pseudocapacitive based metal hydroxides/oxides or conducting polymers (high energy density). The envisioned three dimensional (3D) graphene foams are predominantly advantageous to extend potential applicability by offering a large active surface area and a highly conductive continuous porous network for fast charge transfer with decoration of nanosized pseudocapacitive materials. In this article, we review the latest methodologies and performance evaluation for several 3D graphene based metal oxides/hydroxides and conducting polymer electrodes with improved electrochemical properties for next-generation supercapacitors. The most recent research advancements of our and other groups in the field of 3D graphene based electrode materials for supercapacitors are discussed. To assess the studied materials fully, a careful interpretation and rigorous scrutiny of their electrochemical characteristics is essential. Auspiciously, both nano-structuration as well as confinement of metal hydroxides/oxides and conducting polymers onto a conducting porous 3D graphene matrix play a great role in improving the performance of electrodes mainly due to: (i) active material access over large surface area with fast charge transportation; (ii) synergetic effect of electric double layer and pseudocapacitive based charge storing.

Layered surface structure of gas-atomized high Nb-containing TiAl powder and its impact on laser energy absorption for selective laser melting

NASA Astrophysics Data System (ADS)

Zhou, Y. H.; Lin, S. F.; Hou, Y. H.; Wang, D. W.; Zhou, P.; Han, P. L.; Li, Y. L.; Yan, M.

2018-05-01

Ti45Al8Nb alloy (in at.%) is designed to be an important high-temperature material. However, its fabrication through laser-based additive manufacturing is difficult to achieve. We present here that a good understanding of the surface structure of raw material (i.e. Ti45Al8Nb powder) is important for optimizing its process by selective laser melting (SLM). Detailed X-ray photoelectron spectroscopy (XPS) depth profiling and transmission electron microscopy (TEM) analyses were conducted to determine the surface structure of Ti45Al8Nb powder. An envelope structure (∼54.0 nm in thickness) was revealed for the powder, consisting of TiO2 + Nb2O5 (as the outer surface layer)/Al2O3 + Nb2O5 (as the intermediate layer)/Al2O3 (as the inner surface layer)/Ti45Al8Nb (as the matrix). During SLM, this layered surface structure interacted with the incident laser beam and improved the laser absorptivity of Ti45Al8Nb powder by ∼32.21%. SLM experiments demonstrate that the relative density of the as-printed parts can be realized to a high degree (∼98.70%), which confirms good laser energy absorption. Such layered surface structure with appropriate phase constitution is essential for promoting SLM of the Ti45Al8Nb alloy.

Lightweight, compressible and electrically conductive polyurethane sponges coated with synergistic multiwalled carbon nanotubes and graphene for piezoresistive sensors.

PubMed

Ma, Zhonglei; Wei, Ajing; Ma, Jianzhong; Shao, Liang; Jiang, Huie; Dong, Diandian; Ji, Zhanyou; Wang, Qian; Kang, Songlei

2018-04-19

Lightweight, compressible and highly sensitive pressure/strain sensing materials are highly desirable for the development of health monitoring, wearable devices and artificial intelligence. Herein, a very simple, low-cost and solution-based approach is presented to fabricate versatile piezoresistive sensors based on conductive polyurethane (PU) sponges coated with synergistic multiwalled carbon nanotubes (MWCNTs) and graphene. These sensor materials are fabricated by convenient dip-coating layer-by-layer (LBL) electrostatic assembly followed by in situ reduction without using any complicated microfabrication processes. The resultant conductive MWCNT/RGO@PU sponges exhibit very low densities (0.027-0.064 g cm-3), outstanding compressibility (up to 75%) and high electrical conductivity benefiting from the porous PU sponges and synergistic conductive MWCNT/RGO structures. In addition, the MWCNT/RGO@PU sponges present larger relative resistance changes and superior sensing performances under external applied pressures (0-5.6 kPa) and a wide range of strains (0-75%) compared with the RGO@PU and MWCNT@PU sponges, due to the synergistic effect of multiple mechanisms: "disconnect-connect" transition of nanogaps, microcracks and fractured skeletons at low compression strain and compressive contact of the conductive skeletons at high compression strain. The electrical and piezoresistive properties of MWCNT/RGO@PU sponges are strongly associated with the dip-coating cycle, suspension concentration, and the applied pressure and strain. Fully functional applications of MWCNT/RGO@PU sponge-based piezoresistive sensors in lighting LED lamps and detecting human body movements are demonstrated, indicating their excellent potential for emerging applications such as health monitoring, wearable devices and artificial intelligence.

Fabrication of bi-layer graphene and theoretical simulation for its possible application in thin film solar cell.

PubMed

Behura, Sanjay K; Mahala, Pramila; Nayak, Sasmita; Yang, Qiaoqin; Mukhopadhyay, Indrajit; Janil, Omkar

2014-04-01

High quality graphene film is fabricated using mechanical exfoliation of highly-oriented pyrolytic graphite. The graphene films on glass substrates are characterized using field-emission scanning electron microscopy, atomic force microscopy, Raman spectroscopy, UV-vis spectroscopy and Fourier transform infrared spectroscopy. A very high intensity ratio of 2D to G-band (to approximately 1.67) and narrow 2D-band full-width at half maximum (to approximately 40 cm(-1)) correspond to the bi-layer graphene formation. The bi-layer graphene/p-GaN/n-InGaN/n-GaN/GaN/sAl2O3 system is studied theoretically using TCAD Silvaco software, in which the properties of exfoliated bi-layer graphene are used as transparent and conductive film, and the device exhibits an efficiency of 15.24% compared to 13.63% for ITO/p-GaN/n-InGaN/n-GaN/GaN/Al2O3 system.

Enhancing stability and efficiency of perovskite solar cells with crosslinkable silane-functionalized and doped fullerene

DOE PAGES

Bai, Yang; Dong, Qingfeng; Shao, Yuchuan; ...

2016-10-05

The instability of hybrid perovskite materials due to water and moisture arises as one major challenge to be addressed before any practical application of the demonstrated high efficiency perovskite solar cells. Here we report a facile strategy that can simultaneously enhance the stability and efficiency of p-i-n planar heterojunction-structure perovskite devices. Crosslinkable silane molecules with hydrophobic functional groups are bonded onto fullerene to make the fullerene layer highly water-resistant. Methylammonium iodide is introduced in the fullerene layer for n-doping via anion-induced electron transfer, resulting in dramatically increased conductivity over 100-fold. With crosslinkable silane-functionalized and doped fullerene electron transport layer, themore » perovskite devices deliver an efficiency of 19.5% with a high fill factor of 80.6%. Furthermore, a crosslinked silane-modified fullerene layer also enhances the water and moisture stability of the non-sealed perovskite devices by retaining nearly 90% of their original efficiencies after 30 days’ exposure in an ambient environment.« less

Enhancing stability and efficiency of perovskite solar cells with crosslinkable silane-functionalized and doped fullerene

PubMed Central

Bai, Yang; Dong, Qingfeng; Shao, Yuchuan; Deng, Yehao; Wang, Qi; Shen, Liang; Wang, Dong; Wei, Wei; Huang, Jinsong

2016-01-01

The instability of hybrid perovskite materials due to water and moisture arises as one major challenge to be addressed before any practical application of the demonstrated high efficiency perovskite solar cells. Here we report a facile strategy that can simultaneously enhance the stability and efficiency of p–i–n planar heterojunction-structure perovskite devices. Crosslinkable silane molecules with hydrophobic functional groups are bonded onto fullerene to make the fullerene layer highly water-resistant. Methylammonium iodide is introduced in the fullerene layer for n-doping via anion-induced electron transfer, resulting in dramatically increased conductivity over 100-fold. With crosslinkable silane-functionalized and doped fullerene electron transport layer, the perovskite devices deliver an efficiency of 19.5% with a high fill factor of 80.6%. A crosslinked silane-modified fullerene layer also enhances the water and moisture stability of the non-sealed perovskite devices by retaining nearly 90% of their original efficiencies after 30 days' exposure in an ambient environment. PMID:27703136

MHD heat flux mitigation in hypersonic flow around a blunt body with ablating surface

NASA Astrophysics Data System (ADS)

Bityurin, V. A.; Bocharov, A. N.

2018-07-01

One of the possible applications of magnetohydrodynamic flow control is considered. Namely, the surface heat flux mitigation by means of magnetohydrodynamic (MHD) interaction in hypersonic flow around a blunt body. The 2D computational model realizes a coupled solution of chemically non-equilibrium ionized airflow in magnetic field. Heat- and mass-transfer due to the ablation of materials from the body surface is taken into account. Two cases of free-stream flow conditions are considered: moderate free-stream velocity (7500 m s‑1) case and high free-stream velocity (11 000 m s‑1) case. It is shown that the first flow case results in moderate ionization in the shock layer, while the second flow case results in high ionization. In the first case, the Hall effect is significant, and effective electrical conductivity in the shock layer is rather low. In the second case, the Hall effect reduces, and effective conductivity is high. Even if the Hall effect is strong, as in the first case, intensive MHD deceleration of the flow behind the shock is provided due to the presence of insulating boundaries, the bow shock front and non-conductive wall of the blunt body. In the second case, high effective conductivity provides a high intensity of MHD flow deceleration. In both cases, a strong effect of MHD interaction on the flow structure is observed. As a consequence, a noticeable reduction of the surface heat flux is revealed for reasonable values of magnetic induction. The new treatment of mechanism for the surface heat flux reduction is proposed, which is different from commonly used one assuming that MHD interaction increases the bow shock stand-off distance, and, consequently results in a decrease of the mean temperature drop across the shock layer. The new effect of ‘saturation of heat flux’ is discussed.

Nanoparticle chemisorption printing technique for conductive silver patterning with submicron resolution

PubMed Central

Yamada, Toshikazu; Fukuhara, Katsuo; Matsuoka, Ken; Minemawari, Hiromi; Tsutsumi, Jun'ya; Fukuda, Nobuko; Aoshima, Keisuke; Arai, Shunto; Makita, Yuichi; Kubo, Hitoshi; Enomoto, Takao; Togashi, Takanari; Kurihara, Masato; Hasegawa, Tatsuo

2016-01-01

Silver nanocolloid, a dense suspension of ligand-encapsulated silver nanoparticles, is an important material for printing-based device production technologies. However, printed conductive patterns of sufficiently high quality and resolution for industrial products have not yet been achieved, as the use of conventional printing techniques is severely limiting. Here we report a printing technique to manufacture ultrafine conductive patterns utilizing the exclusive chemisorption phenomenon of weakly encapsulated silver nanoparticles on a photoactivated surface. The process includes masked irradiation of vacuum ultraviolet light on an amorphous perfluorinated polymer layer to photoactivate the surface with pendant carboxylate groups, and subsequent coating of alkylamine-encapsulated silver nanocolloids, which causes amine–carboxylate conversion to trigger the spontaneous formation of a self-fused solid silver layer. The technique can produce silver patterns of submicron fineness adhered strongly to substrates, thus enabling manufacture of flexible transparent conductive sheets. This printing technique could replace conventional vacuum- and photolithography-based device processing. PMID:27091238

Ultra-low thermal conductivity of high-interface density Si/Ge amorphous multilayers

NASA Astrophysics Data System (ADS)

Goto, Masahiro; Xu, Yibin; Zhan, Tianzhuo; Sasaki, Michiko; Nishimura, Chikashi; Kinoshita, Yohei; Ishikiriyama, Mamoru

2018-04-01

Owing to their phonon scattering and interfacial thermal resistance (ITR) characteristics, inorganic multilayers (MLs) have attracted considerable attention for thermal barrier applications. In this study, a-Si/a-Ge MLs with layer thicknesses ranging from 0.3 to 5 nm and different interfacial elemental mixture states were fabricated using a combinatorial sputter-coating system, and their thermal conductivities were measured via a frequency-domain thermo-reflectance method. An ultra-low thermal conductivity of κ = 0.29 ± 0.01 W K-1 m-1 was achieved for a layer thickness of 0.8 nm. The ITR was found to decrease from 8.5 × 10-9 to 3.6 × 10-9 m2 K W-1 when the interfacial density increases from 0.15 to 0.77 nm-1.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chianelli, Russell R.; Castillo, Karina; Gupta, Vipin

Photovoltaic devices and methods of making the same, are disclosed herein. The cell comprises a photovoltaic device that comprises a first electrically conductive layer comprising a photo-sensitized electrode; at least one photoelectrochemical layer comprising metal-oxide particles, an electrolyte solution comprising at least one asphaltene fraction, wherein the metal-oxide particles are optionally dispersed in a surfactant; and a second electrically conductive layer comprising a counter-electrode, wherein the second electrically conductive layer comprises one or more conductive elements comprising carbon, graphite, soot, carbon allotropes or any combinations thereof.

Improvement of the GaSb/Al2O3 interface using a thin InAs surface layer

NASA Astrophysics Data System (ADS)

Greene, Andrew; Madisetti, Shailesh; Nagaiah, Padmaja; Yakimov, Michael; Tokranov, Vadim; Moore, Richard; Oktyabrsky, Serge

2012-12-01

The highly reactive GaSb surface was passivated with a thin InAs layer to limit interface trap state density (Dit) at the III-V/high-k oxide interface. This InAs surface was subjected to various cleaning processes to effectively reduce native oxides before atomic layer deposition (ALD). Ammonium sulfide pre-cleaning and trimethylaluminum/water ALD were used in conjunction to provide a clean interface and annealing in forming gas (FG) at 350 °C resulted in an optimized fabrication for n-GaSb/InAs/high-k gate stacks. Interface trap density, Dit ≈ 2-3 × 1012 cm-2eV-1 resided near the n-GaSb conductance band which was extracted and compared with three different methods. Conductance-voltage-frequency plots showed efficient Fermi level movement and a sub-threshold slope of 200 mV/dec. A composite high-k oxide process was also developed using ALD of Al2O3 and HfO2 resulting in a Dit ≈ 6-7 × 1012 cm-2eV-1. Subjecting these samples to a higher (450 °C) processing temperature results in increased oxidation and a thermally unstable interface. p-GaSb displayed very fast minority carrier generation/recombination likely due to a high density of bulk traps in GaSb.

Simultaneous Conduction and Valence Band Quantization in Ultrashallow High-Density Doping Profiles in Semiconductors

NASA Astrophysics Data System (ADS)

Mazzola, F.; Wells, J. W.; Pakpour-Tabrizi, A. C.; Jackman, R. B.; Thiagarajan, B.; Hofmann, Ph.; Miwa, J. A.

2018-01-01

We demonstrate simultaneous quantization of conduction band (CB) and valence band (VB) states in silicon using ultrashallow, high-density, phosphorus doping profiles (so-called Si:P δ layers). We show that, in addition to the well-known quantization of CB states within the dopant plane, the confinement of VB-derived states between the subsurface P dopant layer and the Si surface gives rise to a simultaneous quantization of VB states in this narrow region. We also show that the VB quantization can be explained using a simple particle-in-a-box model, and that the number and energy separation of the quantized VB states depend on the depth of the P dopant layer beneath the Si surface. Since the quantized CB states do not show a strong dependence on the dopant depth (but rather on the dopant density), it is straightforward to exhibit control over the properties of the quantized CB and VB states independently of each other by choosing the dopant density and depth accordingly, thus offering new possibilities for engineering quantum matter.

Dendritic Ni(Cu)-polypyrrole hybrid films for a pseudo-capacitor.

PubMed

Choi, Bit Na; Chun, Woo Won; Qian, Aniu; Lee, So Jeong; Chung, Chan-Hwa

2015-11-28

Dendritic Ni(Cu)-polypyrrole hybrid films are fabricated for a pseudo-capacitor in a unique morphology using two simple methods: electro-deposition and electrochemical de-alloying. Three-dimensional structures of porous dendrites are prepared by electro-deposition within the hydrogen evolution reaction (HER) at a high cathodic potential; the high-surface-area structure provides sufficient redox reactions between the electrodes and the electrolyte. The dependence of the active-layer thickness on the super-capacitor performance is also investigated, and the 60 μm-thick Ni(Cu)PPy hybrid electrode presents the highest performance of 659.52 F g(-1) at the scan rate of 5 mV s(-1). In the thicker layers, the specific capacitance became smaller due to the diffusion limitation of the ions in an electrolyte. The polypyrrole-hybridization on the porous dendritic Ni(Cu) electrode provides superior specific capacitance and excellent cycling stability due to the improvement in electric conductivity by the addition of conducting polypyrrole in the matrices of the dendritic nano-porous Ni(Cu) layer and the synergistic effect of composite materials.

A high performance transparent resistive switching memory made from ZrO{sub 2}/AlON bilayer structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsai, Tsung-Ling; Chang, Hsiang-Yu; Tseng, Tseung-Yuen, E-mail: tseng@cc.nctu.edu.tw

2016-04-11

In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO{sub 2})/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO{sub 2}/ITO single layer device, the ITO/ZrO{sub 2}/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by formingmore » an asymmetrical conductive filament with the weakest part at the ZrO{sub 2}/AlON interface. Therefore, in the ITO/ZrO{sub 2}/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.« less

Preparation of multi-layer film consisting of hydrogen-free DLC and nitrogen-containing DLC for conductive hard coating

NASA Astrophysics Data System (ADS)

Iijima, Yushi; Harigai, Toru; Isono, Ryo; Degai, Satoshi; Tanimoto, Tsuyoshi; Suda, Yoshiyuki; Takikawa, Hirofumi; Yasui, Haruyuki; Kaneko, Satoru; Kunitsugu, Shinsuke; Kamiya, Masao; Taki, Makoto

2018-01-01

Conductive hard-coating films have potential application as protective films for contact pins used in the electrical inspection process for integrated circuit chips. In this study, multi-layer diamond-like carbon (DLC) films were prepared as conductive hard-coating films. The multi-layer DLC films consisting of DLC and nitrogen-containing DLC (N-DLC) film were prepared using a T-shape filtered arc deposition method. Periodic DLC/N-DLC four-layer and eight-layer films had the same film thickness by changing the thickness of each layer. In the ball-on-disk test, the N-DLC mono-layer film showed the highest wear resistance; however, in the spherical polishing method, the eight-layer film showed the highest polishing resistance. The wear and polishing resistance and the aggressiveness against an opponent material of the multi-layer DLC films improved by reducing the thickness of a layer. In multi-layer films, the soft N-DLC layer between hard DLC layers is believed to function as a cushion. Thus, the tribological properties of the DLC films were improved by a multi-layered structure. The electrical resistivity of multi-layer DLC films was approximately half that of the DLC mono-layer film. Therefore, the periodic DLC/N-DLC eight-layer film is a good conductive hard-coating film.

Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization

NASA Astrophysics Data System (ADS)

Lin, Yu-Shu; Cheng, Po-Hsien; Huang, Kuei-Wen; Lin, Hsin-Chih; Chen, Miin-Jang

2018-06-01

Sub-10 nm high-K gate dielectrics are of critical importance in two-dimensional transition metal dichalcogenides (TMDs) transistors. However, the chemical inertness of TMDs gives rise to a lot of pinholes in gate dielectrics, resulting in large gate leakage current. In this study, sub-10 nm, uniform and pinhole-free Al2O3 high-K gate dielectrics on MoS2 were achieved by atomic layer deposition without surface functionalization, in which an ultrathin Al2O3 layer prepared with a short purge time at a low temperature of 80 °C offers the nucleation cites for the deposition of the overlaying oxide at a higher temperature. Conductive atomic force microscopy reveals the significant suppression of gate leakage current in the sub-10 nm Al2O3 gate dielectrics with the low-temperature nucleation layer. Raman and X-ray photoelectron spectroscopies indicate that no oxidation occurred during the deposition of the low-temperature Al2O3 nucleation layer on MoS2. With the high-quality sub-10 nm Al2O3 high-K gate dielectrics, low hysteresis and subthreshold swing were demonstrated on the normally-off top-gated MoS2 transistors.

Graphene-copper composite with micro-layered grains and ultrahigh strength

PubMed Central

Wang, Lidong; Yang, Ziyue; Cui, Ye; Wei, Bing; Xu, Shichong; Sheng, Jie; Wang, Miao; Zhu, Yunpeng; Fei, Weidong

2017-01-01

Graphene with ultrahigh intrinsic strength and excellent thermal physical properties has the potential to be used as the reinforcement of many kinds of composites. Here, we show that very high tensile strength can be obtained in the copper matrix composite reinforced by reduced graphene oxide (RGO) when micro-layered structure is achieved. RGO-Cu powder with micro-layered structure is fabricated from the reduction of the micro-layered graphene oxide (GO) and Cu(OH)2 composite sheets, and RGO-Cu composites are sintered by spark plasma sintering process. The tensile strength of the 5 vol.% RGO-Cu composite is as high as 608 MPa, which is more than three times higher than that of the Cu matrix. The apparent strengthening efficiency of RGO in the 2.5 vol.% RGO-Cu composite is as high as 110, even higher than that of carbon nanotube, multilayer graphene, carbon nano fiber and RGO in the copper matrix composites produced by conventional MLM method. The excellent tensile and compressive strengths, high hardness and good electrical conductivity are obtained simultaneously in the RGO-Cu composites. The results shown in the present study provide an effective method to design graphene based composites with layered structure and high performance. PMID:28169306

Multidimensional Cyclic Voltammetry Simulations of Pseudocapacitive Electrodes with a Conducting Nanorod Scaffold

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mei, Bing-Ang; Li, Bin; Lin, Jie

This paper aims to understand the effect of nanoarchitecture on the performance of pseudocapacitive electrodes consisting of conducting scaffold coated with pseudocapacitive material. To do so, two-dimensional numerical simulations of ordered conducting nanorods coated with a thin film of pseudocapacitive material were performed. The simulations reproduced three-electrode cyclic voltammetry measurements based on a continuum model derived from first principles. Two empirical approaches commonly used experimentally to characterize the contributions of surface-controlled and diffusion-controlled charge storage mechanisms to the total current density with respect to scan rate were theoretically validated for the first time. Moreover, the areal capacitive capacitance, attributed tomore » EDL formation, remained constant and independent of electrode dimensions, at low scan rates. However, at high scan rates, it decreased with decreasing conducting nanorod radius and increasing pseudocapacitive layer thickness due to resistive losses. By contrast, the gravimetric faradaic capacitance, due to reversible faradaic reactions, decreased continuously with increasing scan rate and pseudocapacitive layer thickness but was independent of conducting nanorod radius. Note that the total gravimetric capacitance predicted numerically featured values comparable to experimental measurements. Finally, an optimum pseudocapacitive layer thickness that maximizes total areal capacitance was identified as a function of scan rate and confirmed by scaling analysis.« less

Multidimensional Cyclic Voltammetry Simulations of Pseudocapacitive Electrodes with a Conducting Nanorod Scaffold

DOE PAGES

Mei, Bing-Ang; Li, Bin; Lin, Jie; ...

2017-10-27

This paper aims to understand the effect of nanoarchitecture on the performance of pseudocapacitive electrodes consisting of conducting scaffold coated with pseudocapacitive material. To do so, two-dimensional numerical simulations of ordered conducting nanorods coated with a thin film of pseudocapacitive material were performed. The simulations reproduced three-electrode cyclic voltammetry measurements based on a continuum model derived from first principles. Two empirical approaches commonly used experimentally to characterize the contributions of surface-controlled and diffusion-controlled charge storage mechanisms to the total current density with respect to scan rate were theoretically validated for the first time. Moreover, the areal capacitive capacitance, attributed tomore » EDL formation, remained constant and independent of electrode dimensions, at low scan rates. However, at high scan rates, it decreased with decreasing conducting nanorod radius and increasing pseudocapacitive layer thickness due to resistive losses. By contrast, the gravimetric faradaic capacitance, due to reversible faradaic reactions, decreased continuously with increasing scan rate and pseudocapacitive layer thickness but was independent of conducting nanorod radius. Note that the total gravimetric capacitance predicted numerically featured values comparable to experimental measurements. Finally, an optimum pseudocapacitive layer thickness that maximizes total areal capacitance was identified as a function of scan rate and confirmed by scaling analysis.« less

Mach 4 Test Results of a Dual-Flowpath, Turbine Based Combined Cycle Inlet

NASA Technical Reports Server (NTRS)

Albertson, Cindy w.; Emami, Saied; Trexler, Carl A.

2006-01-01

An experimental study was conducted to evaluate the performance of a turbine based combined cycle (TBCC) inlet concept, consisting of a low speed turbojet inlet and high speed dual-mode scramjet inlet. The main objectives of the study were (1) to identify any interactions between the low and the high speed inlets during the mode transition phase in which both inlets are operating simultaneously and (2) to determine the effect of the low speed inlet operation on the performance of the high speed inlet. Tests were conducted at a nominal freestream Mach number of 4 using an 8 percent scale model representing a single module of a TBCC inlet. A flat plate was installed upstream of the model to produce a turbulent boundary layer which simulated the full-scale vehicle forebody boundary layer. A flowmeter/back pressure device, with remote actuation, was attached aft of the high speed inlet isolator to simulate the back pressure resulting from dual-mode scramjet combustion. Results indicate that the inlets did not interact with each other sufficiently to affect inlet operability. Flow spillage resulting from a high speed inlet unstart did not propagate far enough upstream to affect the low speed inlet. Also, a low speed inlet unstart did not cause the high speed inlet to unstart. The low speed inlet improved the performance of the high speed inlet at certain conditions by diverting a portion of the boundary layer generated on the forebody plate.

Effect of Al gate on the electrical behaviour of Al-doped Ta2O5 stacks

NASA Astrophysics Data System (ADS)

Skeparovski, A.; Novkovski, N.; Atanassova, E.; Paskaleva, A.; Lazarov, V. K.

2011-06-01

The electrical behaviour of Al-doped Ta2O5 films on nitrided silicon and implemented in Al-gated MIS capacitors has been studied. The dopant was introduced into the Ta2O5 through its surface by deposing a thin Al layer on the top of Ta2O5 followed by an annealing process. The HRTEM images reveal that the initial double-layer structure of the stacks composed of doped Ta2O5 and interfacial SiON layer undergoes changes during the formation of the Al gate and transforms into a three-layer structure with an additional layer between the Al electrode and the doped Ta2O5. This layer, being a result of reaction between the Al gate and the Al-doped Ta2O5, affects the overall electrical properties of the stacks. Strong charge trapping/detrapping processes have been established in the vicinity of the doped Ta2O5/SiON interface resulting in a large C-V hysteresis effect. The charge trapping also influences the current conduction in the layers keeping the current density level rather low even at high electric fields (J < 10-6 A cm-2 at 7 MV cm-1). By employing a three-layer model of the stack, the permittivity of both, the Al-doped Ta2O5 and the additional layer, has been estimated and the corresponding conduction mechanisms identified.

Achieving High Current Density of Perovskite Solar Cells by Modulating the Dominated Facets of Room-Temperature DC Magnetron Sputtered TiO2 Electron Extraction Layer.

PubMed

Huang, Aibin; Lei, Lei; Zhu, Jingting; Yu, Yu; Liu, Yan; Yang, Songwang; Bao, Shanhu; Cao, Xun; Jin, Ping

2017-01-25

The short circuit current density of perovskite solar cell (PSC) was boosted by modulating the dominated plane facets of TiO 2 electron transport layer (ETL). Under optimized condition, TiO 2 with dominant {001} facets showed (i) low incident light loss, (ii) highly smooth surface and excellent wettability for precursor solution, (iii) efficient electron extraction, and (iv) high conductivity in perovskite photovoltaic application. A current density of 24.19 mA cm -2 was achieved as a value near the maximum limit. The power conversion efficiency was improved to 17.25%, which was the record value of PSCs with DC magnetron sputtered carrier transport layer. What is more, the room-temperature process had a great significance for the cost reduction and flexible application of PSCs.

Cu(In,Ga)Se2 Solar Cells with Amorphous In2O3-Based Front Contact Layers.

PubMed

Koida, Takashi; Ueno, Yuko; Nishinaga, Jiro; Higuchi, Hirohumi; Takahashi, Hideki; Iioka, Masayuki; Shibata, Hajime; Niki, Shigeru

2017-09-06

Amorphous (a-) In 2 O 3 -based front contact layers composed of transparent conducting oxide (TCO) and transparent oxide semiconductor (TOS) layers were proved to be effective in enhancing the short-circuit current density (J sc ) of Cu(In,Ga)Se 2 (CIGS) solar cells with a glass/Mo/CIGS/CdS/TOS/TCO structure, while maintaining high fill factor (FF) and open-circuit voltage (V oc ). An n-type a-In-Ga-Zn-O layer was introduced between the CdS and TCO layers. Unlike unintentionally doped ZnO broadly used as TOS layers in CIGS solar cells, the grain-boundary(GB)-free amorphous structure of the a-In-Ga-Zn-O layers allowed high electron mobility with superior control over the carrier density (N). High FF and V oc values were achieved in solar cells containing a-In-Ga-Zn-O layers with N values broadly ranging from 2 × 10 15 to 3 × 10 18 cm -3 . The decrease in FF and V oc produced by the electronic inhomogeneity of solar cells was mitigated by controlling the series resistance within the TOS layer of CIGS solar cells. In addition, a-In 2 O 3 :H and a-In-Zn-O layers exhibited higher electron mobilities than the ZnO:Al layers conventionally used as TCO layers in CIGS solar cells. The In 2 O 3 -based layers exhibited lower free carrier absorption while maintaining similar sheet resistance than ZnO:Al. The TCO and TOS materials and their combinations did not significantly change the V oc of the CIGS solar cells and the mini-modules.

Design and fabrication of metal-insulator-metal diode for high frequency applications

NASA Astrophysics Data System (ADS)

Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

2017-02-01

Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.

Boriding of high carbon high chromium cold work tool steel

NASA Astrophysics Data System (ADS)

Muhammad, W.

2014-06-01

High-carbon high-chromium cold work tool steels are widely used for blanking and cold forming of punches and dies. It is always advantageous to obtain an increased wear resistant surface to improve life and performance of these steels. In this connection boriding of a high-carbon high-chromium cold work die steel, D3, was conducted in a mixture of 30% B4C, 70% borax at 950 °C for two, four and six hours. Case depth of the borided layer obtained was between 40 to 80 μm. After boriding, the surface hardness achieved was between 1430 to 1544 HV depending upon the process time. X-ray diffraction studies confirmed the formation of a duplex compound layer consisting of FeB and Fe2B. It is generally considered that FeB is undesirable because of its inherent brittleness. Post boriding treatment (homogenization) transformed the compound layer into single-phase layer of Fe2B, while surface hardness decreased to 1345-1430 HV. Pin-on-disc wer test showed that wear resistance of the borided samples was superior as compared to non-borided material and increased with boriding time.

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer

NASA Astrophysics Data System (ADS)

Tan, Qiuhong; Wang, Qianjin; Liu, Yingkai; Yan, Hailong; Cai, Wude; Yang, Zhikun

2018-04-01

Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)4Ti3O12 films as insulator, and HfO2 films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent properties such as large channel conductance, high on/off current ratio, high channel carrier mobility, great fatigue endurance performance, and data retention. Despite its thin capacitance equivalent thickness, the gate insulator with HfO2 defect control layer shows a low leakage current density of 3.1 × 10-9 A/cm2 at a gate voltage of - 3 V.

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer.

PubMed

Tan, Qiuhong; Wang, Qianjin; Liu, Yingkai; Yan, Hailong; Cai, Wude; Yang, Zhikun

2018-04-27

Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd) 4 Ti 3 O 12 films as insulator, and HfO 2 films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent properties such as large channel conductance, high on/off current ratio, high channel carrier mobility, great fatigue endurance performance, and data retention. Despite its thin capacitance equivalent thickness, the gate insulator with HfO 2 defect control layer shows a low leakage current density of 3.1 × 10 -9  A/cm 2 at a gate voltage of - 3 V.

Efficient organic solar cells using copper(I) iodide (CuI) hole transport layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peng, Ying; Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ; Yaacobi-Gross, Nir

We report the fabrication of high power conversion efficiency (PCE) polymer/fullerene bulk heterojunction (BHJ) photovoltaic cells using solution-processed Copper (I) Iodide (CuI) as hole transport layer (HTL). Our devices exhibit a PCE value of ∼5.5% which is equivalent to that obtained for control devices based on the commonly used conductive polymer poly(3,4-ethylenedioxythiophene): polystyrenesulfonate as HTL. Inverted cells with PCE >3% were also demonstrated using solution-processed metal oxide electron transport layers, with a CuI HTL evaporated on top of the BHJ. The high optical transparency and suitable energetics of CuI make it attractive for application in a range of inexpensive large-area optoelectronicmore » devices.« less

Align and random electrospun mat of PEDOT:PSS and PEDOT:PSS/RGO

NASA Astrophysics Data System (ADS)

Sarabi, Ghazale Asghari; Latifi, Masoud; Bagherzadeh, Roohollah

2018-01-01

In this research work we fabricated two ultrafine conductive nanofibrous layers to investigate the materilas composition and their properties for the preparation of supercapacitor materials application. In first layer, a polymer and a conductive polymer were used and second layer was a composition of polymer, conductive polymer and carbon-base material. In both cases align and randomized mat of conductive nanofibers were fabricated using electrospinning set up. Conductive poly (3,4-ethylenedioxythiophene)/ polystyrene sulfonate (PEDOT:PSS) nanofibers were electrospun by dissolving fiber-forming polymer and polyvinyl alcohol (PVA) in an aqueous dispersion of PEDOT:PSS. The effect of addition of reduced graphene oxide (RGO) was considered for nanocomposite layer. The ultrafine conductive polymer fibers and conductive nanocomposite fibrous materials were also fabricated using an electrospinning process. A fixed collector and a rotating drum were used for random and align nanofibers production, respectively. The resulted fibers were characterized and analyzed by SEM, FTIR and two-point probe conductivity test. The average diameter of nanofibers measured by ImageJ software indicated that the average fiber diameter for first layer was 100 nm and for nanocomposite layer was about 85 nm. The presence of PEDOT:PSS and RGO in the nanofibers was confirmed by FT-IR spectroscopy. The conductivity of align and random layers was characterized. The conductivity of PEDOT:PSS nanofibers showed higher enhancement by addition of RGO in aqueous dispersion. The obtained results showed that alignment of fibrous materials can be considered as an engineering tool for tuning the conductivity of fibrous materials for many different applications such as supercapacitors, conductive and transparent materials.

In-Situ Hydraulic Conductivities of Soils and Anomalies at a Future Biofuel Production Site

NASA Astrophysics Data System (ADS)

Williamson, M. F.; Jackson, C. R.; Hale, J. C.; Sletten, H. R.

2010-12-01

Forested hillslopes of the Upper Coastal Plain at the Savannah River Site, SC, feature a shallow clay loam argillic layer with low median saturated hydraulic conductivity. Observations from a grid of shallow, maximum-rise piezometers indicate that perching on this clay layer is common. However, flow measurements from an interflow-interception trench indicate that lateral flow is rare and most soil water percolates through the clay layer. We hypothesize that the lack of frequent lateral flow is due to penetration of the clay layer by roots of pine trees. We used ground penetrating radar (GPR) to map the soil structure and potential anomalies, such as root holes, down to two meters depth at three 10×10-m plots. At each plot, a 1×10-m trench was later back-hoe excavated along a transect that showed the most anomalies on the GPR maps. Each trench was excavated at 0.5-m intervals until the clay layer was reached (two plots were excavated to a final depth of 0.875 m and the third plot was excavated to a final depth of 1.0 m). At each interval, compact constant-head permeameters (CCHPs) were used to measure in-situ hydraulic conductivities in the clay-loam matrix and in any visually apparent anomalies. Conductivity was also estimated using a second 1×10-m transect of CCHP measurements taken within randomly placed augur holes. Additional holes targeted GPR anomalies. The second transect was created in case the back-hoe impacted conductivity readings. High-conductivity anomalies were also visually investigated by excavating with a shovel. Photographs of soil wetness were taken at visually apparent anomalies with a multispectral camera. We discovered that all visually apparent anomalies found are represented on the GPR maps, but that not all of the predicted anomalies on the GPR maps are visually apparent. We discovered that tree root holes create anomalies, but that there were also many conductivity anomalies that could not be visually distinguished from low-conductivity soil.

Ion-implanted epitaxially grown ZnSe

NASA Technical Reports Server (NTRS)

Chernow, F.

1975-01-01

The use of ZnSe to obtain efficient, short wavelength injection luminescence was investigated. It was proposed that shorter wavelength emission and higher efficiency be achieved by employing a p-i-n diode structure rather than the normal p-n diode structure. The intervening i layer minimizes concentration quenching effects and the donor-acceptor pair states leading to long wavelength emission. The surface p layer was formed by ion implantation; implantation of the i layer rather than the n substrate permits higher, uncompensated p-type doping. An ion implanted p-n junction in ZnSe is efficiency-limited by high electron injection terminating in nonradiative recombination at the front surface, and by low hole injection resulting from the inability to obtain high conductivity p-type surface layers. While the injection ratio in p-n junctions was determined by the radio of majority carrier concentrations, the injection ratio in p-i-n structures was determined by the mobility ratios and/or space charge neutrality requirements in the i layer.

Single-layered graphene oxide nanosheet/polyaniline hybrids fabricated through direct molecular exfoliation.

PubMed

Chen, Guan-Liang; Shau, Shi-Min; Juang, Tzong-Yuan; Lee, Rong-Ho; Chen, Chih-Ping; Suen, Shing-Yi; Jeng, Ru-Jong

2011-12-06

In this study, we used direct molecular exfoliation for the rapid, facile, large-scale fabrication of single-layered graphene oxide nanosheets (GOSs). Using macromolecular polyaniline (PANI) as a layered space enlarger, we readily and rapidly synthesized individual GOSs at room temperature through the in situ polymerization of aniline on the 2D GOS platform. The chemically modified GOS platelets formed unique 2D-layered GOS/PANI hybrids, with the PANI nanorods embedded between the GO interlayers and extended over the GO surface. X-ray diffraction revealed that intergallery expansion occurred in the GO basal spacing after the PANI nanorods had anchored and grown onto the surface of the GO layer. Transparent folding GOSs were, therefore, observed in transmission electron microscopy images. GOS/PANI nanohybrids possessing high conductivities and large work functions have the potential for application as electrode materials in optoelectronic devices. Our dispersion/exfoliation methodology is a facile means of preparing individual GOS platelets with high throughput, potentially expanding the applicability of nanographene oxide materials. © 2011 American Chemical Society

Broadband focusing ultrasonic transducers based on dimpled LiNbO3 plate with inversion layer.

PubMed

Chen, Jin; Dai, Ji-Yan; Zhang, Chao; Zhang, Zhitian; Feng, Guanping

2012-12-01

A high-frequency broadband focusing transducer based on dimpled LiNbO(3) inversion layer plate has been fabricated and characterized. A spherical surface with a curvature radius of 6 mm is formed on the half-thickness LiNbO(3) inversion layer plate of Y36° cut orientation. The domain structure in the cross section is observed after a hydrofluoric acid etching process. For transducer fabrication, conductive epoxy is used as the backing material and polymer is deposited on the front face as the matching layer. The center frequency, bandwidth, and insertion loss of the focused transducer are measured to be 72 MHz, 136%, and -32 dB, respectively. The focused transducer has been successfully used for rabbit eyeball imaging and a better imaging capability compared with the planar transducer has been demonstrated. These promising results prove that the dimpled LiNbO(3) inversion layer plate has great potential for fabrication of high-frequency broadband focusing ultrasonic transducers.

Localized Vibrations of Bi Bilayer Leading to Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in Weak Topological Insulator n-Type BiSe.

PubMed

Samanta, Manisha; Pal, Koushik; Pal, Provas; Waghmare, Umesh V; Biswas, Kanishka

2018-05-02

Realization of high thermoelectric performance in n-type semiconductors is of imperative need on account of the dearth of efficient n-type thermoelectric materials compared to the p-type counterpart. Moreover, development of efficient thermoelectric materials based on Te-free compounds is desirable because of the scarcity of Te in the Earth's crust. Herein, we report the intrinsic ultralow thermal conductivity and high thermoelectric performance near room temperature in n-type BiSe, a Te-free solid, which recently has emerged as a weak topological insulator. BiSe possesses a layered structure consisting of a bismuth bilayer (Bi 2 ) sandwiched between two Bi 2 Se 3 quintuple layers [Se-Bi-Se-Bi-Se], resembling natural heterostructure. High thermoelectric performance of BiSe is realized through the ultralow lattice thermal conductivity (κ lat of ∼0.6 W/mK at 300 K), which is significantly lower than that of Bi 2 Se 3 (κ lat of ∼1.8 W/mK at 300 K), although both of them belong to the same layered homologous family (Bi 2 ) m (Bi 2 Se 3 ) n . Phonon dispersion calculated from first-principles and the experimental low-temperature specific heat data indicate that soft localized vibrations of bismuth bilayer in BiSe are responsible for its ultralow κ lat . These low energy optical phonon branches couple strongly with the heat carrying acoustic phonons, and consequently suppress the phonon mean free path leading to low κ lat . Further optimization of thermoelectric properties of BiSe through Sb substitution and spark plasma sintering (SPS) results in high ZT ∼ 0.8 at 425 K along the pressing direction, which is indeed remarkable among Te-free n-type thermoelectric materials near room temperature.

Effects of Stern layer conductance on electrokinetic energy conversion in nanofluidic channels.

PubMed

Davidson, Christian; Xuan, Xiangchun

2008-03-01

A thermo-electro-hydro-dynamic model is developed to analytically account for the effects of Stern layer conductance on electrokinetic energy conversion in nanofluidic channels. The optimum electrokinetic devices performance is dependent on a figure of merit, in which the Stern layer conductance appears as a nondimensional Dukhin number. Such surface conductance is found to significantly reduce the figure of merit and thus the efficiency and power output. This finding may explain why the recently measured electrokinetic devices performances are far below the theoretical predictions where the effects of Stern layer conductance have been ignored.

Ultrashort-pulsed laser processing and solution based coating in roll-to-roll manufacturing of organic photovoltaics

NASA Astrophysics Data System (ADS)

Hördemann, C.; Hirschfelder, K.; Schaefer, M.; Gillner, A.

2015-09-01

The breakthrough of flexible organic electronics and especially organic photovoltaics is highly dependent on cost-efficient production technologies. Roll-2-Roll processes show potential for a promising solution in terms of high throughput and low-cost production of thin film organic components. Solution based material deposition and integrated laser patterning processes offer new possibilities for versatile production lines. The use of flexible polymeric substrates brings along challenges in laser patterning which have to be overcome. One main challenge when patterning transparent conductive layers on polymeric substrates are material bulges at the edges of the ablated area. Bulges can lead to short circuits in the layer system leading to device failure. Therefore following layers have to have a sufficient thickness to cover and smooth the ridge. In order to minimize the bulging height, a study has been carried out on transparent conductive ITO layers on flexible PET substrates. Ablation results using different beam shapes, such as Gaussian beam, Top-Hat beam and Donut-shaped beam, as well as multi-pass scribing and double-pulsed ablation are compared. Furthermore, lab scale methods for cleaning the patterned layer and eliminating bulges are contrasted to the use of additional water based sacrificial layers in order to obtain an alternative procedure suitable for large scale Roll-2-Roll manufacturing. Besides progress in research, ongoing transfer of laser processes into a Roll-2-Roll demonstrator is illustrated. By using fixed optical elements in combination with a galvanometric scanner, scribing, variable patterning and edge deletion can be performed individually.

Direct electron injection into an oxide insulator using a cathode buffer layer

PubMed Central

Lee, Eungkyu; Lee, Jinwon; Kim, Ji-Hoon; Lim, Keon-Hee; Seok Byun, Jun; Ko, Jieun; Dong Kim, Young; Park, Yongsup; Kim, Youn Sang

2015-01-01

Injecting charge carriers into the mobile bands of an inorganic oxide insulator (for example, SiO2, HfO2) is a highly complicated task, or even impossible without external energy sources such as photons. This is because oxide insulators exhibit very low electron affinity and high ionization energy levels. Here we show that a ZnO layer acting as a cathode buffer layer permits direct electron injection into the conduction bands of various oxide insulators (for example, SiO2, Ta2O5, HfO2, Al2O3) from a metal cathode. Studies of current–voltage characteristics reveal that the current ohmically passes through the ZnO/oxide-insulator interface. Our findings suggests that the oxide insulators could be used for simply fabricated, transparent and highly stable electronic valves. With this strategy, we demonstrate an electrostatic discharging diode that uses 100-nm SiO2 as an active layer exhibiting an on/off ratio of ∼107, and protects the ZnO thin-film transistors from high electrical stresses. PMID:25864642

Multi-layer electrode with nano-Li4Ti5O12 aggregates sandwiched between carbon nanotube and graphene networks for high power Li-ion batteries.

PubMed

Choi, Jin-Hoon; Ryu, Won-Hee; Park, Kyusung; Jo, Jeong-Dai; Jo, Sung-Moo; Lim, Dae-Soon; Kim, Il-Doo

2014-12-05

Self-aggregated Li4Ti5O12 particles sandwiched between graphene nanosheets (GNSs) and single-walled carbon nanotubes (SWCNTs) network are reported as new hybrid electrodes for high power Li-ion batteries. The multi-layer electrodes are fabricated by sequential process comprising air-spray coating of GNSs layer and the following electrostatic spray (E-spray) coating of well-dispersed colloidal Li4Ti5O12 nanoparticles, and subsequent air-spray coating of SWCNTs layer once again. In multi-stacked electrodes of GNSs/nanoporous Li4Ti5O12 aggregates/SWCNTs networks, GNSs and SWCNTs serve as conducting bridges, effectively interweaving the nanoporous Li4Ti5O12 aggregates, and help achieve superior rate capability as well as improved mechanical stability of the composite electrode by holding Li4Ti5O12 tightly without a binder. The multi-stacked electrodes deliver a specific capacity that maintains an impressively high capacity of 100 mA h g(-1) at a high rate of 100C even after 1000 cycles.

Spin-filter spin valves with nano-oxide layers for high density recording heads

NASA Astrophysics Data System (ADS)

Al-Jibouri, Abdul; Hoban, M.; Lu, Z.; Pan, G.

2002-05-01

A new spin-filter spin valve with nano-oxide specular layers with structure of Ta/NiFe/IrMn/CoFe/NOL1/CoFe/Cu/CoFetfl/CutCu/NOL2/Ta was deposited using a Nordiko 9606 physical vapor deposition system. The data clearly show that the magnetoresistive (MR) ratio has been significantly improved for spin valves with thinner free layers. The MR ratio remains larger than 12% even when the CoFe free layer is as thin as 1 nm. An optimized MR ratio of ˜15% was obtained when tfl was about 1.2 nm and tCu about 1.5 nm, and was a result of the balance between the increase in the electron mean free path difference and current shunting through the conducting layer. It is also found that the Cu enhancing layer can improve soft magnetic properties of the CoFe free layer due to the low atomic intermixing observed between Co and Cu. The CoFe free layer of 1-4 nm exhibited coercivity of ˜3 Oe after annealing in a static magnetic field. This kind of spin valve with a very thin soft CoFe free layer is particularly attractive for ultra high density read head applications.

Electrochemical depositing rGO-Ti-rGO heterogeneous substrates with higher thermal conductivity and heat transfer performance compared to pure Ti.

PubMed

Wang, Jing; Wang, Huatao; Zhang, Wenying; Yang, Xinyi; Wen, Guangwu; Wang, Yijie; Zhou, Weiwei

2017-02-17

Titanium (Ti) and its alloys are widely applied in many high strength, light weight applications, but their thermal conductivity is lower compared to that of other metals, which limits their further applications. In this paper, we demonstrated experimentally that rGO-Ti-rGO heterogeneous substrates with higher thermal conductivity, up to ∼38.8% higher than Ti, could be fabricated by electrochemical depositing rGO on their surface. The rGO layers are grown on the surface of Ti substrates, with appearance of bedclothes on the beds. The thickness of rGO layers is around 300-500 nm and around 600-1000 nm when deposited for 5 cycles and 10 cycles, respectively. According to the cooling experiment results, as-prepared Ti + rGO substrates can present excellent thermal conduction performance, and reduce the chip temperature close to 3.2 °C-13.1 °C lower than Ti alloy substrates with the heat flow density of 0.4-3.6 W cm -2 . Finally, the approach to electro-chemically deposit hundreds of nanometer rGO layers on the surface of Ti substrates can improve their thermal conductivity and heat transfer performance, which may have further application in the increasing thermal conduction of other metal-alloys, ceramics and polymers.

High Ms Fe16N2 thin film with Ag under layer on GaAs substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Allard Jr, Lawrence Frederick

2016-01-01

(001) textured Fe16N2 thin film with Ag under layer is successfully grown on GaAs substrate using a facing target sputtering (FTS) system. After post annealing, chemically ordered Fe16N2 phase is formed and detected by X-ray diffraction (XRD). High saturation magnetization (Ms) is measured by a vibrating sample magnetometer (VSM). In comparison with Fe16N2 with Ag under layer on MgO substrate and Fe16N2 with Fe under layer on GaAs substrate, the current layer structure shows a higher Ms value, with a magnetically softer feature in contrast to the above cases. In addition, X-ray photoelectron spectroscopy (XPS) is performed to characterize themore » binding energy of N atoms. To verify the role of strain that the FeN layer experiences in the above three structures, Grazing Incidence X-ray Diffraction (GIXRD) is conducted to reveal a large in-plane lattice constant due to the in-plane biaxial tensile strain. INTRODUCTION« less

Die attach dimension and material on thermal conductivity study for high power COB LED

NASA Astrophysics Data System (ADS)

Sarukunaselan, K.; Ong, N. R.; Sauli, Z.; Mahmed, N.; Kirtsaeng, S.; Sakuntasathien, S.; Suppiah, S.; Alcain, J. B.; Retnasamy, V.

2017-09-01

High power LED began to gain popularity in the semiconductor market due to its efficiency and luminance. Nonetheless, along with the increased in efficiency, there was an increased in the junction temperature too. The alleviating junction temperature is undesirable since the performances and lifetime will be degraded over time. Therefore, it is crucial to solve this thermal problem by maximizing the heat dissipation to the ambience. Improvising the die attach (DA) layer would be the best option because this layer is sandwiched between the chip (heat source) and the substrate (channel to the ambient). In this paper, the impact of thickness and thermal conductivity onto the junction temperature and Von Mises stress is analyzed. Results obtained showed that the junction temperature is directly proportional to the thickness but the stress was inversely proportional to the thickness of the DA. The thermal conductivity of the materials did affect the junction temperature as there was not much changes once the thermal conductivity reached 20W/mK. However, no significant changes were observed on the Von Mises stress caused by the thermal conductivity. Material with the second highest thermal conductivity had the lowest stress, whereas the highest conductivity material had the highest stress value at 20 µm. Overall, silver sinter provided the best thermal dissipation compared to the other materials.

Graphene device and method of using graphene device

DOEpatents

Bouchiat, Vincent; Girit, Caglar; Kessler, Brian; Zettl, Alexander K.

2015-08-11

An embodiment of a graphene device includes a layered structure, first and second electrodes, and a dopant island. The layered structure includes a conductive layer, an insulating layer, and a graphene layer. The electrodes are coupled to the graphene layer. The dopant island is coupled to an exposed surface of the graphene layer between the electrodes. An embodiment of a method of using a graphene device includes providing the graphene device. A voltage is applied to the conductive layer of the graphene device. Another embodiment of a method of using a graphene device includes providing the graphene device without the dopant island. A dopant island is placed on an exposed surface of the graphene layer between the electrodes. A voltage is applied to the conductive layer of the graphene device. A response of the dopant island to the voltage is observed.

Effects of Substrate and Post-Growth Treatments on the Microstructure and Properties of ZnO Thin Films Prepared by Atomic Layer Deposition

NASA Astrophysics Data System (ADS)

Haseman, Micah; Saadatkia, P.; Winarski, D. J.; Selim, F. A.; Leedy, K. D.; Tetlak, S.; Look, D. C.; Anwand, W.; Wagner, A.

2016-12-01

Aluminum-doped zinc oxide (ZnO:Al) thin films were synthesized by atomic layer deposition on silicon, quartz and sapphire substrates and characterized by x-ray diffraction (XRD), high-resolution scanning electron microscopy, optical spectroscopy, conductivity mapping, Hall effect measurements and positron annihilation spectroscopy. XRD showed that the as-grown films are of single-phase ZnO wurtzite structure and do not contain any secondary or impurity phases. The type of substrate was found to affect the orientation and degree of crystallinity of the films but had no effect on the defect structure or the transport properties of the films. High conductivity of 10-3 Ω cm, electron mobility of 20 cm2/Vs and carrier density of 1020 cm-3 were measured in most films. Thermal treatments in various atmospheres induced a large effect on the thickness, structure and electrical properties of the films. Annealing in a Zn and nitrogen environment at 400°C for 1 h led to a 16% increase in the thickness of the film; this indicates that Zn extracts oxygen atoms from the matrix and forms new layers of ZnO. On the other hand, annealing in a hydrogen atmosphere led to the emergence of an Al2O3 peak in the XRD pattern, which implies that hydrogen and Al atoms compete to occupy Zn sites in the ZnO lattice. Only ambient air annealing had an effect on film defect density and electrical properties, generating reductions in conductivity and electron mobility. Depth-resolved measurements of positron annihilation spectroscopy revealed short positron diffusion lengths and high concentrations of defects in all as-grown films. However, these defects did not diminish the electrical conductivity in the films.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Das, Saptarshi; Bera, Mrinal K.; Roelofs, Andreas K

A method of forming a TMDC monolayer comprises providing a multi-layer transition metal dichalcogenide (TMDC) film. The multi-layer TMDC film comprises a plurality of layers of the TMDC. The multi-layer TMDC film is positioned on a conducting substrate. The conducting substrate is contacted with an electrolyte solution. A predetermined electrode potential is applied on the conducting substrate and the TMDC monolayer for a predetermined time. A portion of the plurality of layers of the TMDC included in the multi-layer TMDC film is removed by application of the predetermined electrode potential, thereby leaving a TMDC monolayer film positioned on the conductingmore » substrate.« less

355 nm UV laser patterning and post-processing of FR4 PCB for fine pitch components integration

NASA Astrophysics Data System (ADS)

Dupont, F.; Stoukatch, S.; Laurent, P.; Dricot, S.; Kraft, M.

2018-01-01

Laser direct patterning of fine pitch features on standard PCB (Printed Circuit Board) was investigated. As a feasibility study, eight parameter sets were selected and the smallest achievable grooves and tracks were determined. Three regular FR4 (Flame Resistant 4) PCB substrates have been experimented with. The first two have respectively 18 μm and 35 μm bare copper conductive layer without finish while the third one has a 18 μm copper layer with ENIG (Electroless Nickel Immersion Gold) finish. Laser patterning of PCB conductive structure is a single step, maskless and purely dry operation expected to allow reaching fine pitch features, even on thick copper layers (≥ 18 μm) for which the traditional chemical wet processes encounter underetch problems. Aside PCB complete structuring, a second objective is to evaluate laser post-processing of standard patterned PCB as an economically viable technique to integrate a few fine pitch components on low cost PCBs. This process is suitable for prototyping and for small and medium series. The widths of the smallest grooves and tracks that we achieved were measured about 11 μm and 19 μm on 18 μm thick cooper layer, 13 μm and 39 μm on 35 μm thick cooper layer, and 11 μm and 38 μm on 18 μm cooper layer with ENIG finish. These values are well below what can be achieved with a wet process. Etching results are presented at high magnification both from the top and from a cross-sectioning perspective. The latter allows observation of the TAZ (Thermal Affected Zone) in the conductive layer and the damages in the FR4.

High efficiency diamond solar cells

DOEpatents

Gruen, Dieter M [Downers Grove, IL

2008-05-06

A photovoltaic device and method of making same. A layer of p-doped microcrystalline diamond is deposited on a layer of n-doped ultrananocrystalline diamond such as by providing a substrate in a chamber, providing a first atmosphere containing about 1% by volume CH.sub.4 and about 99% by volume H.sub.2 with dopant quantities of a boron compound, subjecting the atmosphere to microwave energy to deposit a p-doped microcrystalline diamond layer on the substrate, providing a second atmosphere of about 1% by volume CH.sub.4 and about 89% by volume Ar and about 10% by volume N.sub.2, subjecting the second atmosphere to microwave energy to deposit a n-doped ultrananocrystalline diamond layer on the p-doped microcrystalline diamond layer. Electrodes and leads are added to conduct electrical energy when the layers are irradiated.

Surface passivation of InP solar cells with InAlAs layers

NASA Technical Reports Server (NTRS)

Jain, Raj K.; Flood, Dennis J.; Landis, Geoffrey A.

1993-01-01

The efficiency of indium phosphide solar cells is limited by high values of surface recombination. The effect of a lattice-matched In(0.52)Al(0.48)As window layer material for InP solar cells, using the numerical code PC-1D is investigated. It was found that the use of InAlAs layer significantly enhances the p(+)n cell efficiency, while no appreciable improvement is seen for n(+)p cells. The conduction band energy discontinuity at the heterojunction helps in improving the surface recombination. An optimally designed InP cell efficiency improves from 15.4 percent to 23 percent AMO for a 10 nm thick InAlAs layer. The efficiency improvement reduces with increase in InAlAs layer thickness, due to light absorption in the window layer.

Mobile geophysical study of peat deposits in Fuhrberger Field, Germany

NASA Astrophysics Data System (ADS)

Wunderlich, T.; Petersen, H.; Hagrey, S. A. al; Rabbel, W.

2012-04-01

In the water protection area of Fuhrberger Field, north of Hanover, geophysical techniques were applied to study the stakeholder problem of the source detection for nitrate accumulations in the ground water. We used our mobile multisensor platform to conduct measurements using Ground Penetrating Radar (GPR, 200 MHz antenna) and Electromagnetic Induction (EMI, EM31). This aims to study the subsurface occurrences of peat deposits (surplus of organic carbon) supposed to be a source of nitrate emissions due to the aeration and the drawdown of groundwater levels (e.g. by pumping, drainage etc.). Resulting EMI and GPR signals show high data quality. Measured apparent electrical conductivity shows very low values (<10 mS/m) due to the mainly sandy subsurface. For this medium, both methods are expected to penetrate down to 3-5 m depth. GPR radargrams, time slices of GPR reflection energy and EMI apparent electrical conductivities are plotted on aerial photographs and compared to each other's and with vegetation intensity. We could separate areas characterized by low reflection energy and high conductivity, and vice versa. Briefly, organic rich sediments such as peats are assumed to have a relative high conductivity and thus low GPR reflectivity. Some areas of local conductivity increase correspond to a deep reflection interface (as seen in the radargrams), which even vanishes due to the high attenuation caused by the high conductivity. This implies that the upper layer is more conductive than the lower layer. Several local areas with these characteristics are found at the study sites. We recommend shallow drillings at representative points to deliver the necessary confirmation with ground truth information. Acknowledgments: iSOIL (Interactions between soil related sciences - Linking geophysics, soil science and digital soil mapping) is a Collaborative Project (Grant Agreement number 211386) co-funded by the Research DG of the European Commission within the RTD activities of the FP7 Thematic Priority Environment.

Development of Plasma-Sprayed Molybdenum Carbide-Based Anode Layers with Various Metal Oxides for SOFC

NASA Astrophysics Data System (ADS)

Faisal, N. H.; Ahmed, R.; Katikaneni, S. P.; Souentie, S.; Goosen, M. F. A.

2015-12-01

Air plasma-sprayed (APS) coatings provide an ability to deposit a range of novel fuel cell materials at competitive costs. This work develops three separate types of composite anodes (Mo-Mo2C/Al2O3, Mo-Mo2C/ZrO2, Mo-Mo2C/TiO2) using a combination of APS process parameters on Hastelloy®X for application in intermediate temperature proton-conducting solid oxide fuel cells. Commercially available carbide of molybdenum powder catalyst (Mo-Mo2C) and three metal oxides (Al2O3, ZrO2, TiO2) was used to prepare three separate composite feedstock powders to fabricate three different anodes. Each of the modified composition anode feedstock powders included a stoichiometric weight ratio of 0.8:0.2. The coatings were characterized by scanning electron microscopy, energy dispersive spectroscopy, x-ray diffraction, nanoindentation, and conductivity. We report herein that three optimized anode layers of thicknesses between 200 and 300 µm and porosity as high as 20% for Mo-Mo2C/Al2O3 (250-µm thick) and Mo-Mo2C/TiO2 (300 µm thick) and 17% for Mo-Mo2C/ZrO2 (220-µm thick), controllable by a selection of the APS process parameters with no addition of sacrificial pore-forming material. The nanohardness results indicate the upper layers of the coatings have higher values than the subsurface layers in coatings with some effect of the deposition on the substrate. Mo-Mo2C/ZrO2 shows high electrical conductivity.

Diagnostic system for profiling micro-beams

DOEpatents

Elmer, John W.; Palmer, Todd A.; Teruya, Alan T.; Walton, Chris C.

2007-10-30

An apparatus for characterization of a micro beam comprising a micro modified Faraday cup assembly including a first layer of material, a second layer of material operatively connected to the first layer of material, a third layer of material operatively connected to the second layer of material, and a fourth layer of material operatively connected to the third layer of material. The first layer of material comprises an electrical conducting material and has at least one first layer radial slit extending through the first layer. An electrical ground is connected to the first layer. The second layer of material comprises an insulating material and has at least one second layer radial slit corresponding to the first layer radial slit in the first layer of material. The second layer radial slit extends through the second layer. The third layer of material comprises a conducting material and has at least one third layer radial slit corresponding to the second layer radial slit in the second layer of material. The third layer radial slit extends through the third layer. The fourth layer of material comprises an electrical conducting material but does not have slits. An electrical measuring device is connected to the fourth layer. The micro modified Faraday cup assembly is positioned to be swept by the micro beam.

Pyrolytic carbon-coated stainless steel felt as a high-performance anode for bioelectrochemical systems.

PubMed

Guo, Kun; Hidalgo, Diana; Tommasi, Tonia; Rabaey, Korneel

2016-07-01

Scale up of bioelectrochemical systems (BESs) requires highly conductive, biocompatible and stable electrodes. Here we present pyrolytic carbon-coated stainless steel felt (C-SS felt) as a high-performance and scalable anode. The electrode is created by generating a carbon layer on stainless steel felt (SS felt) via a multi-step deposition process involving α-d-glucose impregnation, caramelization, and pyrolysis. Physicochemical characterizations of the surface elucidate that a thin (20±5μm) and homogenous layer of polycrystalline graphitic carbon was obtained on SS felt surface after modification. The carbon coating significantly increases the biocompatibility, enabling robust electroactive biofilm formation. The C-SS felt electrodes reach current densities (jmax) of 3.65±0.14mA/cm(2) within 7days of operation, which is 11 times higher than plain SS felt electrodes (0.30±0.04mA/cm(2)). The excellent biocompatibility, high specific surface area, high conductivity, good mechanical strength, and low cost make C-SS felt a promising electrode for BESs. Copyright © 2016 Elsevier Ltd. All rights reserved.

High-surface-area nitrogen-doped reduced graphene oxide for electric double-layer capacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Youn, Hee-Chang; Bak, Seong-Min; Kim, Myeong-Seong

A two-step method consisting of solid-state microwave irradiation and heat treatment under NH₃ gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007m²g⁻¹), high electrical conductivity (1532S m⁻¹), and low oxygen content (1.5 wt%) for electric double-layer capacitor applications. The specific capacitance of N-RGO was 291 Fg⁻¹ at a current density of 1 A g⁻¹, and a capacitance of 261 F g⁻¹ was retained at 50 A g⁻¹, indicating a very good rate capability. N-RGO also showed excellent cycling stability, preserving 96% of the initial specific capacitance after 100,000 cycles. Near-edge X-ray absorptionmore » fine-structure spectroscopy evidenced the recover of π-conjugation in the carbon networks with the removal of oxygenated groups and revealed the chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content.« less

High-surface-area nitrogen-doped reduced graphene oxide for electric double-layer capacitors

DOE PAGES

Youn, Hee-Chang; Bak, Seong-Min; Kim, Myeong-Seong; ...

2015-06-08

A two-step method consisting of solid-state microwave irradiation and heat treatment under NH₃ gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007m²g⁻¹), high electrical conductivity (1532S m⁻¹), and low oxygen content (1.5 wt%) for electric double-layer capacitor applications. The specific capacitance of N-RGO was 291 Fg⁻¹ at a current density of 1 A g⁻¹, and a capacitance of 261 F g⁻¹ was retained at 50 A g⁻¹, indicating a very good rate capability. N-RGO also showed excellent cycling stability, preserving 96% of the initial specific capacitance after 100,000 cycles. Near-edge X-ray absorptionmore » fine-structure spectroscopy evidenced the recover of π-conjugation in the carbon networks with the removal of oxygenated groups and revealed the chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content.« less

Appraisal of an Array TEM Method in Detecting a Mined-Out Area Beneath a Conductive Layer

NASA Astrophysics Data System (ADS)

Li, Hai; Xue, Guo-qiang; Zhou, Nan-nan; Chen, Wei-ying

2015-10-01

The transient electromagnetic method has been extensively used for the detection of mined-out area in China for the past few years. In the cases that the mined-out area is overlain by a conductive layer, the detection of the target layer is difficult with a traditional loop source TEM method. In order to detect the target layer in this condition, this paper presents a newly developed array TEM method, which uses a grounded wire source. The underground current density distribution and the responses of the grounded wire source TEM configuration are modeled to demonstrate that the target layer is detectable in this condition. The 1D OCCAM inversion routine is applied to the synthetic single station data and common middle point gather. The result reveals that the electric source TEM method is capable of recovering the resistive target layer beneath the conductive overburden. By contrast, the conductive target layer cannot be recovered unless the distance between the target layer and the conductive overburden is large. Compared with inversion result of the single station data, the inversion of common middle point gather can better recover the resistivity of the target layer. Finally, a case study illustrates that the array TEM method is successfully applied in recovering a water-filled mined-out area beneath a conductive overburden.

Radiometric Measurements of the Thermal Conductivity of Complex Planetary-like Materials

NASA Astrophysics Data System (ADS)

Piqueux, S.; Christensen, P. R.

2012-12-01

Planetary surface temperatures and thermal inertias are controlled by the physical and compositional characteristics of the surface layer material, which result from current and past geological activity. For this reason, temperature measurements are often acquired because they provide fundamental constraints on the geological history and habitability. Examples of regolith properties affecting surface temperatures and inertias are: grain sizes and mixture ratios, solid composition in the case of ices, presence of cement between grains, regolith porosity, grain roughness, material layering etc.. Other important factors include volatile phase changes, and endogenic or exogenic heat sources (i.e. geothermal heat flow, impact-related heat, biological activity etc.). In the case of Mars, the multitude of instruments observing the surface temperature at different spatial and temporal resolutions (i.e. IRTM, Thermoskan, TES, MiniTES, THEMIS, MCS, REMS, etc.) in conjunction with other instruments allows us to probe and characterize the thermal properties of the surface layer with an unprecedented resolution. While the derivation of thermal inertia values from temperature measurements is routinely performed by well-established planetary regolith numerical models, constraining the physical properties of the surface layer from thermal inertia values requires the additional step of laboratory measurements. The density and specific heat are usually constant and sufficiently well known for common geological materials, but the bulk thermal conductivity is highly variable as a function of the physical characteristics of the regolith. Most laboratory designs do not allow an investigation of the thermal conductivity of complex regolith configurations similar to those observed on planetary surfaces (i.e. cemented material, large grains, layered material, and temperature effects) because the samples are too small and need to be soft to insert heating or measuring devices. For this reason, we have built a new type of apparatus to measure the thermal conductivity of sample significantly larger than previous apparatus under planetary conditions of atmosphere and gas composition. Samples' edges are cooled down from room to LN2 temperature and the surface material temperature is recorded by an infrared camera without inserting thermocouples or heat sources. Sample surface cooling trends are fit with finite element models of heat transfer to retrieve the material thermal conductivity. Preliminary results confirm independent numerical modeling results predicting the thermal conductivity of complex materials: the thermal inertia of particulate material under Mars conditions is temperature-dependent, small amounts of cements significantly increase the bulk conductivity and inertia of particulate material, and one-grain-thick armors similar to those observed by the Mars Exploration Rovers behave like a thin highly conductive layer that does not significantly influence apparent thermal inertias. These results are used to further our interpretation of Martian temperature observations. For example local amounts of subsurface water ice or the fraction of cementing phase in the global Martian duricrust can be constrained; the search for subtle changes in near-surface heat flow can be performed more accurately, and surface thermal inertias under various atmospheric conditions of pressure and gas composition can be predicted.

Long-wavelength Instability in Surface-tension-driven Bénard Convection

NASA Astrophysics Data System (ADS)

van Hook, Stephen J.

1997-03-01

Laboratory experiments and numerical simulations reveal that a liquid layer heated from below and possessing a free upper surface can undergo a long-wavelength deformational instability that causes rupture of the interface.(S. J. VanHook, M. F. Schatz, W. D. McCormick, J. B. Swift, and H. L. Swinney, Phys. Rev. Lett.) 75, 4397 (1995). Depending on the depth and thermal conductivity of the liquid and the overlying gas layer, the interface can rupture downwards and form a dry spot or rupture upwards and form a high spot. This long-wavelength instability competes with the formation of Bénard hexagons for thin or viscous liquid layers, or for liquid layers in microgravity.

High pressure induced crossover between metal and insulator conductivity type in low dimensionality electron systems

NASA Astrophysics Data System (ADS)

Dizhur, E.; Voronovskii, A.; Kostyleva, I.; Kotel'nikov, I.; Zaitsev-Zotov, S.

2011-12-01

We report the results of our recent experimental studies concerned with electron systems of lower dimensionality the conductivity of which may be toggled between metallic and insulating regime appliing high pressure. The objects under present study include: a) tunneling through Shottky barrier into two-dimension (2D) electron system formed in the δ-doped layer in GaAs under hydrostatic pressure up to 3 GPa in a cylinder-piston cell; b) quasi-one-dimension (1D) `insulator' crystals NbS3 which obtain metallic conductivity type at pressures above 5.5 GPa in `toroid' anvils.

Direct simulation of high-speed mixing layers

NASA Technical Reports Server (NTRS)

Mukunda, H. S.; Sekar, B.; Carpenter, M. H.; Drummond, J. Philip; Kumar, Ajay

1992-01-01

A computational study of a nonreacting high-speed mixing layer is performed. A higher order algorithm with sufficient grid points is used to resolve all relevant scales. In all cases, a temporal free-stream disturbance is introduced. The resulting flow is time-sampled to generate a statistical cross section of the flow properties. The studies are conducted at two convective Mach numbers, three free-stream turbulence intensities, three Reynolds numbers, and two types of initial profiles-hyperbolic tangent (tanh) and boundary layer. The boundary-layer profile leads to more realistic predictions of the transition processes. The predicted transition Reynolds number of 0.18 x 10(exp 6) compares well with experimental data. Normalized vortex spacings for the boundary-layer case are about 3.5 and compare favorably with the 1.5 to 2.5 found in experimental measurements. The tanh profile produces spacings of about 10. The growth rate of the layer is shown to be moderately affected by the initial disturbance field, but comparison with experimental data shows moderate agreement. For the boundary-layer case, it is shown that noise at the Strouhal number of 0.007 is selectively amplified and shows little Reynolds number dependence.

Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiN x Grown by Low-Pressure Chemical Vapor Deposition.

PubMed

Liu, Xinyu; Wang, Xinhua; Zhang, Yange; Wei, Ke; Zheng, Yingkui; Kang, Xuanwu; Jiang, Haojie; Li, Junfeng; Wang, Wenwu; Wu, Xuebang; Wang, Xianping; Huang, Sen

2018-06-12

Constant-capacitance deep-level transient Fourier spectroscopy is utilized to characterize the interface between a GaN epitaxial layer and a SiN x passivation layer grown by low-pressure chemical vapor deposition (LPCVD). A near-conduction band (NCB) state E LP ( E C - E T = 60 meV) featuring a very small capture cross section of 1.5 × 10 -20 cm -2 was detected at 70 K at the LPCVD-SiN x /GaN interface. A partially crystallized Si 2 N 2 O thin layer was detected at the interface by high-resolution transmission electron microscopy. Based on first-principles calculations of crystallized Si 2 N 2 O/GaN slabs, it was confirmed that the NCB state E LP mainly originates from the strong interactions between the dangling bonds of gallium and its vicinal atoms near the interface. The partially crystallized Si 2 N 2 O interfacial layer might also give rise to the very small capture cross section of the E LP owing to the smaller lattice mismatch between the Si 2 N 2 O and GaN epitaxial layer and a larger mean free path of the electron in the crystallized portion compared with an amorphous interfacial layer.

Photoacoustic emission from Au nanoparticles arrayed on thermal insulation layer.

PubMed

Namura, Kyoko; Suzuki, Motofumi; Nakajima, Kaoru; Kimura, Kenji

2013-04-08

Efficient photoacoustic emission from Au nanoparticles on a porous SiO(2) layer was investigated experimentally and theoretically. The Au nanoparticle arrays/porous SiO(2)/SiO(2)/Ag mirror sandwiches, namely, local plasmon resonators, were prepared by dynamic oblique deposition (DOD). Photoacoustic measurements were performed on the local plasmon resonators, whose optical absorption was varied from 0.03 (3%) to 0.95 by varying the thickness of the dielectric SiO(2) layer. The sample with high absorption (0.95) emitted a sound that was eight times stronger than that emitted by graphite (0.94) and three times stronger than that emitted by the sample without the porous SiO(2) layer (0.93). The contribution of the porous SiO(2) layer to the efficient photoacoustic emission was analyzed by means of a numerical method based on a one-dimensional heat transfer model. The result suggested that the low thermal conductivity of the underlying porous layer reduces the amount of heat escaping from the substrate and contributes to the efficient photoacoustic emission from Au nanoparticle arrays. Because both the thermal conductivity and the spatial distribution of the heat generation can be controlled by DOD, the local plasmon resonators produced by DOD are suitable for the spatio-temporal modulation of the local temperature.