High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate

NASA Astrophysics Data System (ADS)

Bae, Jinho; Kim, Hyoung Woo; Kang, In Ho; Yang, Gwangseok; Kim, Jihyun

2018-03-01

We have demonstrated a β-Ga2O3 metal-semiconductor field-effect transistor (MESFET) with a high off-state breakdown voltage (344 V), based on a quasi-two-dimensional β-Ga2O3 field-plated with hexagonal boron nitride (h-BN). Both the β-Ga2O3 and h-BN were mechanically exfoliated from their respective crystal substrates, followed by dry-transfer onto a SiO2/Si substrate for integration into a high breakdown voltage quasi-two-dimensional β-Ga2O3 MESFETs. N-type conducting behavior was observed in the fabricated β-Ga2O3 MESFETs, along with a high on/off current ratio (>106) and excellent current saturation. A three-terminal off-state breakdown voltage of 344 V was obtained, with a threshold voltage of -7.3 V and a subthreshold swing of 84.6 mV/dec. The distribution of electric fields in the quasi-two-dimensional β-Ga2O3 MESFETs was simulated to analyze the role of the dielectric h-BN field plate in improving the off-state breakdown voltage. The stability of the field-plated β-Ga2O3 MESFET in air was confirmed after storing the MESFET in ambient air for one month. Our results pave the way for unlocking the full potential of β-Ga2O3 for use in a high-power nano-device with an ultrahigh breakdown voltage.

Modeling of breakdown during the post-arc phase of a vacuum circuit breaker

NASA Astrophysics Data System (ADS)

Sarrailh, P.; Garrigues, L.; Boeuf, J. P.; Hagelaar, G. J. M.

2010-12-01

After a high-current interruption in a vacuum circuit breaker (VCB), the electrode gap is filled with a high density copper vapor plasma in a large copper vapor density (~1022 m-3). The copper vapor density is sustained by electrode evaporation. During the post-arc phase, a rapidly increasing voltage is applied to the gap, and a sheath forms and expands, expelling the plasma from the gap when circuit breaking is successful. There is, however, a risk of breakdown during that phase, leading to the failure of the VCB. Preventing breakdown during the post-arc phase is an important issue for the improvement of VCB reliability. In this paper, we analyze the risk of Townsend breakdown in the high copper vapor density during the post-arc phase using a numerical model that takes into account secondary electron emission, volume ionization, and plasma and neutral transport, for given electrode temperatures. The simulations show that fast neutrals created in the cathode sheath by charge exchange collisions with ions generate a very large secondary electron emission current that can lead to Townsend breakdown. The results also show that the risk of failure of the VCB due to Townsend breakdown strongly depends on the electrode temperatures (which govern the copper vapor density) and becomes important for temperatures greater than 2100 K, which can be reached in vacuum arcs. The simulations also predict that a hotter anode tends to increase the risk of Townsend breakdown.

BPM Breakdown Potential in the PEP-II B-factory Storage Ring Collider

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weathersby, Stephen; Novokhatski, Alexander; /SLAC

2010-02-10

High current B-Factory BPM designs incorporate a button type electrode which introduces a small gap between the button and the beam chamber. For achievable currents and bunch lengths, simulations indicate that electric potentials can be induced in this gap which are comparable to the breakdown voltage. This study characterizes beam induced voltages in the existing PEP-II storage ring collider BPM as a function of bunch length and beam current.

Barrier breakdown mechanism in nano-scale perpendicular magnetic tunnel junctions with ultrathin MgO barrier

NASA Astrophysics Data System (ADS)

Lv, Hua; Leitao, Diana C.; Hou, Zhiwei; Freitas, Paulo P.; Cardoso, Susana; Kämpfe, Thomas; Müller, Johannes; Langer, Juergen; Wrona, Jerzy

2018-05-01

Recently, the perpendicular magnetic tunnel junctions (p-MTJs) arouse great interest because of its unique features in the application of spin-transfer-torque magnetoresistive random access memory (STT-MRAM), such as low switching current density, good thermal stability and high access speed. In this paper, we investigated current induced switching (CIS) in ultrathin MgO barrier p-MTJs with dimension down to 50 nm. We obtained a CIS perpendicular tunnel magnetoresistance (p-TMR) of 123.9% and 7.0 Ω.μm2 resistance area product (RA) with a critical switching density of 1.4×1010 A/m2 in a 300 nm diameter junction. We observe that the extrinsic breakdown mechanism dominates, since the resistance of our p-MTJs decreases gradually with the increasing current. From the statistical analysis of differently sized p-MTJs, we observe that the breakdown voltage (Vb) of 1.4 V is 2 times the switching voltage (Vs) of 0.7 V and the breakdown process exhibits two different breakdown states, unsteady and steady state. Using Simmons' model, we find that the steady state is related with the barrier height of the MgO layer. Furthermore, our study suggests a more efficient method to evaluate the MTJ stability under high bias rather than measuring Vb. In conclusion, we developed well performant p-MTJs for the use in STT-MRAM and demonstrate the mechanism and control of breakdown in nano-scale ultrathin MgO barrier p-MTJs.

Laser-induced electron source in a vacuum diode

NASA Astrophysics Data System (ADS)

Ghera, U.; Boxman, R. L.; Kleinman, H.; Ruschin, S.

1989-11-01

Experiments were conducted in which a high-power CO2 TEA laser interacted with metallic cathode in a high-vacuum (10 to the -8th Torr) diode. For power densities lower than 5 x 10 to the 7th W/sq cm, no current was detected. For power densities in the range of 5 x 10 to the 7th to 5 x 10 to the 8th W/sq cm, the Cu cathode emitted a maximum current of 40 mA. At a higher power density level, a circuit-limited current of 8 A was detected. The jump of a few orders of magnitude in the current is attributed to breakdown of the diode gap. The experimental results are similar to those of a triggered vacuum gap, and a thorough comparison is presented in this paper. The influence of the pressure in the vacuum chamber on the current magnitude shows the active role that adsorbed gas molecules have in the initial breakdown. When the cathode material was changed from metal to metal oxide, much lower laser power densities were required to reach the breakdown current region.

Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage

NASA Astrophysics Data System (ADS)

Watahiki, Tatsuro; Yuda, Yohei; Furukawa, Akihiko; Yamamuka, Mikio; Takiguchi, Yuki; Miyajima, Shinsuke

2017-11-01

Heterojunction p-Cu2O/n-β-Ga2O3 diodes were fabricated on an epitaxially grown β-Ga2O3(001) layer. The reverse breakdown voltage of these p-n diodes reached 1.49 kV with a specific on-resistance of 8.2 mΩ cm2. The leakage current of the p-n diodes was lower than that of the Schottky barrier diode due to the higher barrier height against the electron. The ideality factor of the p-n diode was 1.31. It indicated that some portion of the recombination current at the interface contributed to the forward current, but the diffusion current was the dominant. The forward current more than 100 A/cm2 indicated the lower conduction band offset at the hetero-interface between Cu2O and Ga2O3 layers than that predicted from the bulk properties, resulting in such a high forward current without limitation. These results open the possibility of advanced device structures for wide bandgap Ga2O3 to achieve higher breakdown voltage and lower on-resistance.

Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Huang, Wei; Dudley, Michael; Fazi, Christian

1998-01-01

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vectors greater than or equal to 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = 1c with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. While not nearly as detrimental to SiC device performance as micropipes, it has recently been demonstrated that elementary screw dislocations somewhat degrade the reverse leakage and breakdown properties of 4H-SiC p(+)n diodes. Diodes containing elementary screw dislocations exhibited a 5% to 35% reduction in breakdown voltage, higher pre-breakdown reverse leakage current, softer reverse breakdown I-V knee, and microplasmic breakdown current filaments that were non-catastrophic as measured under high series resistance biasing. This paper details continuing experimental and theoretical investigations into the electrical properties of 4H-SiC elementary screw dislocations. The nonuniform breakdown behavior of 4H-SiC p'n junctions containing elementary screw dislocations exhibits interesting physical parallels with nonuniform breakdown phenomena previously observed in other semiconductor materials. Based upon experimentally observed dislocation-assisted breakdown, a re-assessment of well-known physical models relating power device reliability to junction breakdown has been undertaken for 4H-SiC. The potential impact of these elementary screw dislocation defects on the performance and reliability of various 4H-SiC device technologies being developed for high-power applications will be discussed.

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qi, Meng; Zhao, Yuning; Yan, Xiaodong

2015-12-07

Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

LOW TEMPERATURE EFFECTS ON HIGH VOLTAGE BREAKDOWN AT SMALL GAPS. PART I

DOE Office of Scientific and Technical Information (OSTI.GOV)

DeGeeter, D.J.

1962-05-16

Experiments were performed that examined the effect of electrode cooling on breakdown. Cooling the cathode to liquid N/sub 2/ temperature reduced the d-c electron current, thereby increasing the voltage breakdown value. Tests involving cooling of only one electrode indicated that only the cathode was affected. Cooling was found to be of probable value if the flaking problem were removed when the cathode has a high field region. The data indicated that breakdown would not necessarily be improved for all electrode geometries, especially when the data do not approach the Trump-Van de Graaff curve against which the data were plotted. Effectsmore » of electrode polishing and outgassing were also studied. (D.C.W.)« less

High-Field Fast-Risetime Pulse Failures in 4H- and 6H-SiC pn Junction Diodes

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Fazi, Christian

1996-01-01

We report the observation of anomalous reverse breakdown behavior in moderately doped (2-3 x 10(exp 17 cm(exp -3)) small-area micropipe-free 4H- and 6H-SiC pn junction diodes. When measured with a curve tracer, the diodes consistently exhibited very low reverse leakage currents and sharp repeatable breakdown knees in the range of 140-150 V. However, when subjected to single-shot reverse bias pulses (200 ns pulsewidth, 1 ns risetime), the diodes failed catastrophically at pulse voltages of less than 100 V. We propose a possible mechanism for this anomalous reduction in pulsed breakdown voltage relative to dc breakdown voltage. This instability must be removed so that SiC high-field devices can operate with the same high reliability as silicon power devices.

Gas Composition Sensing Using Carbon Nanotube Arrays

NASA Technical Reports Server (NTRS)

Li, Jing; Meyyappan, Meyya

2012-01-01

This innovation is a lightweight, small sensor for inert gases that consumes a relatively small amount of power and provides measurements that are as accurate as conventional approaches. The sensing approach is based on generating an electrical discharge and measuring the specific gas breakdown voltage associated with each gas present in a sample. An array of carbon nanotubes (CNTs) in a substrate is connected to a variable-pulse voltage source. The CNT tips are spaced appropriately from the second electrode maintained at a constant voltage. A sequence of voltage pulses is applied and a pulse discharge breakdown threshold voltage is estimated for one or more gas components, from an analysis of the current-voltage characteristics. Each estimated pulse discharge breakdown threshold voltage is compared with known threshold voltages for candidate gas components to estimate whether at least one candidate gas component is present in the gas. The procedure can be repeated at higher pulse voltages to estimate a pulse discharge breakdown threshold voltage for a second component present in the gas. The CNTs in the gas sensor have a sharp (low radius of curvature) tip; they are preferably multi-wall carbon nanotubes (MWCNTs) or carbon nanofibers (CNFs), to generate high-strength electrical fields adjacent to the tips for breakdown of the gas components with lower voltage application and generation of high current. The sensor system can provide a high-sensitivity, low-power-consumption tool that is very specific for identification of one or more gas components. The sensor can be multiplexed to measure current from multiple CNT arrays for simultaneous detection of several gas components.

Evaluation of high temperature capacitor dielectrics

NASA Astrophysics Data System (ADS)

Hammoud, Ahmad N.; Myers, Ira T.

Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

Evaluation of high temperature capacitor dielectrics

NASA Technical Reports Server (NTRS)

Hammoud, Ahmad N.; Myers, Ira T.

1992-01-01

Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

Breakdown Characteristic Analysis of Paper- Oil Insulation under AC and DC Voltage

NASA Astrophysics Data System (ADS)

Anuar, N. F.; Jamail, N. A. M.; Rahman, R. A.; Kamarudin, M. S.

2017-08-01

This paper presents the study of breakdown characteristic of Kraft paper insulated with two different types of insulating fluid, which are Palm oil and Coconut oil. Palm oil and Coconut oil are chosen as the alternative fluid to the transformer oil because it has high potential and environmentally-friendly. The Segezha Kraft papers with various thicknesses (65.5 gsm, 75 gsm, 85gsm, 90 gsm) have been used in this research. High Voltage Direct Current (HVDC), High Voltage Alternating Current (HVAC) and carbon track and severity analysis is conducted to observe the sample of aging Kraft paper. These samples have been immersed using Palm oil and Coconut oil up to 90 days to observe the absorption rate. All samples started to reach saturation level at 70 days of immersion. HVDC and HVAC breakdown experiments have been done after the samples had reached the saturation level based on normal condition, immersed in Palm oil and immersed in Coconut oil. All samples immersed in liquid show different breakdown voltage reading compared to normal condition. The analysis of carbon track and severity on surface has been done using Analytical Scanning Electron Microscope (SEM) Analysis. The results of the experiment show that the sample of Kraft paper immersed in Palm oil was better than Coconut oil immersed sample. Therefore the sample condition was the main factor that determines the value of breakdown voltage test. Introduction

Application of dynamic displacement current for diagnostics of subnanosecond breakdowns in an inhomogeneous electric field

NASA Astrophysics Data System (ADS)

Shao, Tao; Tarasenko, Victor F.; Zhang, Cheng; Burachenko, Alexandr G.; Rybka, Dmitry V.; Kostyrya, Igor'D.; Lomaev, Mikhail I.; Baksht, Evgeni Kh.; Yan, Ping

2013-05-01

The breakdown of different air gaps at high overvoltages in an inhomogeneous electric field was investigated with a time resolution of up to 100 ps. Dynamic displacement current was used for diagnostics of ionization processes between the ionization wave front and a plane anode. It is demonstrated that during the generation of a supershort avalanche electron beam (SAEB) with amplitudes of ˜10 A and more, conductivity in the air gaps at the breakdown stage is ensured by the ionization wave, whose front propagates from the electrode of small curvature radius, and by the dynamic displacement current between the ionization wave front and the plane electrode. The amplitude of the dynamic displacement current measured by a current shunt is 100 times greater than the SAEB. It is shown that with small gaps and with a large cathode diameter, the amplitude of the dynamic displacement current during a subnanosecond rise time of applied pulse voltage can be higher than 4 kA.

Magnetic Ignition of Pulsed Gas Discharges in Air of Low Pressure in a Coaxial Plasma Gun

NASA Technical Reports Server (NTRS)

Thom, Karlheinz; Norwood, Joseph, Jr.

1961-01-01

The effect of an axial magnetic field on the breakdown voltage of a coaxial system of electrodes has been investigated by earlier workers. For low values of gas pressure times electrode spacing, the breakdown voltage is decreased by the application of the magnetic field. The electron cyclotron radius now assumes the role held by the mean free path in nonmagnetic discharges and the breakdown voltage becomes a function of the magnetic flux density. In this paper the dependence of the formative time lag as a function of the magnetic flux density is established and the feasibility of using a magnetic field for igniting high-voltage, high-current discharges is shown through theory and experiment. With a 36 microfarad capacitor bank charged to 48,000 volts, a peak current of 1.3 x 10( exp 6) amperes in a coaxial type of plasma gun was achieved with a current rise time of only 2 microseconds.

Measurements of Breakdown Field and Forward Current Stability in 3C-SiC P-N Junction Diodes Grown on Step-Free 4H-SiC

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Spry, David J.; Trunek, Andrew J.

2005-01-01

This paper reports on initial fabrication and electrical characterization of 3C-SiC p-n junction diodes grown on step-free 4H-SiC mesas. Diodes with n-blocking-layer doping ranging from approx. 2 x 10(exp 16)/cu cm to approx.. 5 x 10(exp 17)/cu cm were fabricated and tested. No optimization of junction edge termination or ohmic contacts was employed. Room temperature reverse characteristics of the best devices show excellent low-leakage behavior, below previous 3C-SiC devices produced by other growth techniques, until the onset of a sharp breakdown knee. The resulting estimated breakdown field of 3C-SiC is at least twice the breakdown field of silicon, but is only around half the breakdown field of <0001> 4H-SiC for the doping range studied. Initial high current stressing of 3C diodes at 100 A/sq cm for more than 20 hours resulted in less than 50 mV change in approx. 3 V forward voltage. 3C-SiC, pn junction, p+n diode, rectifier, reverse breakdown, breakdown field,heteroepitaxy, epitaxial growth, electroluminescence, mesa, bipolar diode

High ESD Breakdown-Voltage InP HBT Transimpedance Amplifier IC for Optical Video Distribution Systems

NASA Astrophysics Data System (ADS)

Sano, Kimikazu; Nagatani, Munehiko; Mutoh, Miwa; Murata, Koichi

This paper is a report on a high ESD breakdown-voltage InP HBT transimpedance amplifier IC for optical video distribution systems. To make ESD breakdown-voltage higher, we designed ESD protection circuits integrated in the TIA IC using base-collector/base-emitter diodes of InP HBTs and resistors. These components for ESD protection circuits have already existed in the employed InP HBT IC process, so no process modifications were needed. Furthermore, to meet requirements for use in optical video distribution systems, we studied circuit design techniques to obtain a good input-output linearity and a low-noise characteristic. Fabricated InP HBT TIA IC exhibited high human-body-model ESD breakdown voltages (±1000V for power supply terminals, ±200V for high-speed input/output terminals), good input-output linearity (less than 2.9-% duty-cycle-distortion), and low noise characteristic (10.7pA/√Hz averaged input-referred noise current density) with a -3-dB-down higher frequency of 6.9GHz. To the best of our knowledge, this paper is the first literature describing InP ICs with high ESD-breakdown voltages.

High-voltage subnanosecond dielectric breakdown

NASA Astrophysics Data System (ADS)

Mankowski, John Jerome

Current interests in ultrawideband radar sources are in the microwave regime, which correspond to voltage pulse risetimes less than a nanosecond. Some new sources, including the Phillips Laboratory Hindenberg series of hydrogen gas switched pulsers use hydrogen at hundreds of atmospheres of pressure in the switch. Unfortunately, the published data of electrical breakdown of gas and liquid media at these time lengths are relatively scarce. A study was conducted on the electrical breakdown properties of liquid and gas dielectrics at subnanosecond and nanoseconds. Two separate voltage sources with pulse risetimes less than 400 ps were developed. Diagnostic probes were designed and tested for their capability of detecting high voltage pulses at these fast risetimes. A thorough investigation into E-field strengths of liquid and gas dielectrics at breakdown times ranging from 0.4 to 5 ns was performed. The voltage polarity dependence on breakdown strength is observed. Streak camera images of streamer formation were taken. The effect of ultraviolet radiation, incident upon the gap, on statistical lag time was determined.

5.0 kV breakdown-voltage vertical GaN p-n junction diodes

NASA Astrophysics Data System (ADS)

Ohta, Hiroshi; Hayashi, Kentaro; Horikiri, Fumimasa; Yoshino, Michitaka; Nakamura, Tohru; Mishima, Tomoyoshi

2018-04-01

A high breakdown voltage of 5.0 kV has been achieved for the first time in vertical GaN p-n junction diodes by using our newly developed guard-ring structures. A resistance device was inserted between the main diode portion and the guard-ring portion in a ring-shaped p-n diode to generate a voltage drop over the resistance device by leakage current flowing through the guard-ring portion under negatively biased conditions before breakdown. The voltage at the outer mesa edge of the guard-ring portion, where the electric field intensity is highest and the destructive breakdown usually occurs, is decreased by the voltage drop, so the electric field concentration in the portion is reduced. By adopting this structure, the breakdown voltage (V B) is raised by about 200 V. Combined with a low measured on-resistance (R on) of 1.25 mΩ cm2, Baliga’s figure of merit (V\\text{B}2/R\\text{on}) was as high as 20 GW/cm2.

Thin-Film Module Reverse-Bias Breakdown Sites Identified by Thermal Imaging: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnston, Steven; Sulas, Dana; Guthrey, Harvey L

Thin-film module sections are stressed under reverse bias to simulate partial shading conditions. Such stresses can cause permanent damage in the form of 'wormlike' defects due to thermal runaway. When large reverse biases with limited current are applied to the cells, dark lock-in thermography (DLIT) can detect where spatially-localized breakdown initiates before thermal runaway leads to permanent damage. Predicted breakdown defect sites have been identified in both CIGS and CdTe modules using DLIT. These defects include small pinholes, craters, or voids in the absorber layer of the film that lead to built-in areas of weakness where high current densities maymore » cause thermal damage in a partial-shading event.« less

Thin-Film Module Reverse-Bias Breakdown Sites Identified by Thermal Imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnston, Steven; Sulas, Dana; Guthrey, Harvey L

Thin-film module sections are stressed under reverse bias to simulate partial shading conditions. Such stresses can cause permanent damage in the form of 'wormlike' defects due to thermal runaway. When large reverse biases with limited current are applied to the cells, dark lock-in thermography (DLIT) can detect where spatially-localized breakdown initiates before thermal runaway leads to permanent damage. Predicted breakdown defect sites have been identified in both CIGS and CdTe modules using DLIT. These defects include small pinholes, craters, or voids in the absorber layer of the film that lead to built-in areas of weakness where high current densities maymore » cause thermal damage in a partial-shading event.« less

Megavolt, Multigigawatt Pulsed Plasma Switch

NASA Technical Reports Server (NTRS)

Lee, Ja H.; Choi, Sang H.; Song, Kyo D.

1996-01-01

Plasma switch proposed for use in high-voltage, high-current pulse power system. Designed not only to out-perform conventional spark-gap switch but also relatively compact and lightweight. Features inverse-pinch configuration to prevent constriction of current sheets into filaments, plus multiple-ring-electrode structure to resist high-voltage breakdown.

Current–voltage characteristics of high-voltage 4H-SiC p{sup +}–n{sub 0}–n{sup +} diodes in the avalanche breakdown mode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Samsonova, T. P.

p{sup +}–n{sub 0}–n{sup +} 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm{sup 2}. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10{sup –2} Ω cm{sup 2}), the electron drift velocity in the n{sub 0} base at electric fields higher than 10{sup 6} V/cm (7.8 × 10{sup 6} cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10{sup –4} K{sup –1}).

High energy density capacitors for low cost applications

NASA Astrophysics Data System (ADS)

Iyore, Omokhodion David

Polyvinylidene fluoride (PVDF) and its copolymers with trifluoroethylene, hexafluoropropylene and chlorotrifluoroethylene are the most widely investigated ferroelectric polymers, due to their relatively high electromechanical properties and potential to achieve high energy density. [Bauer, 2010; Zhou et al., 2009] The research community has focused primarily on melt pressed or extruded films of PVDF-based polymers to obtain the highest performance with energy density up to 25 Jcm-3. [Zhou et al., 2009] Solution processing offers an inexpensive, low temperature alternative, which is also easily integrated with flexible electronics. This dissertation focuses on the fabrication of solution-based polyvinylidene fluoride-hexafluoropropylene metal-insulator-metal capacitors on flexible substrates using a photolithographic process. Capacitors were optimized for maximum energy density, high dielectric strength and low leakage current density. It is demonstrated that with the right choice of solvent, electrodes, spin-casting and annealing conditions, high energy density thin film capacitors can be fabricated repeatably and reproducibly. The high electric field dielectric constants were measured and the reliabilities of the polymer capacitors were also evaluated via time-zero breakdown and time-dependent breakdown techniques. Chapter 1 develops the motivation for this work and provides a theoretical overview of dielectric materials, polarization, leakage current and dielectric breakdown. Chapter 2 is a literature review of polymer-based high energy density dielectrics and covers ferroelectric polymers, highlighting PVDF and some of its derivatives. Chapter 3 summarizes some preliminary experimental work and presents materials and electrical characterization that support the rationale for materials selection and process development. Chapter 4 discusses the fabrication of solution-processed PVDF-HFP and modification of its properties by photo-crosslinking. It is followed by a comparison of the structural, chemical and electrical properties of the neat and crosslinked films. Chapter 5 investigates the reliability and lifetime of PVDF-HFP thin films via time-zero and time-dependent dielectric breakdown. A power law relationship between the breakdown strength and characteristic breakdown time was determined, allowing extrapolation of lifetime at a desired operating voltage. The dissertation concludes with a summary and project outlook in chapter 7.

Ultra-High Accelerating Gradients in Radio-Frequency Cryogenic Copper Structures

NASA Astrophysics Data System (ADS)

Cahill, Alexander David

Normal conducting radio-frequency (rf) particle accelerators have many applications, including colliders for high energy physics, high-intensity synchrotron light sources, non-destructive testing for security, and medical radiation therapy. In these applications, the accelerating gradient is an important parameter. Specifically for high energy physics, increasing the accelerating gradient extends the potential energy reach and is viewed as a way to mitigate their considerable cost. Furthermore, a gradient increase will enable for more compact and thus accessible free electron lasers (FELs). The major factor limiting larger accelerating gradients is vacuum rf breakdown. Basic physics of this phenomenon has been extensively studied over the last few decades. During which, the occurrence of rf breakdowns was shown to be probabilistic, and can be characterized by a breakdown rate. The current consensus is that vacuum rf breakdowns are caused by movements of crystal defects induced by periodic mechanical stress. The stress may be caused by pulsed surface heating and large electric fields. A compelling piece of evidence that supports this hypothesis is that accelerating structures constructed from harder materials exhibit larger accelerating gradients for similar breakdown rates. One possible method to increase sustained electric fields in copper cavities is to cool them to temperatures below 77 K, where the rf surface resistance and coefficient of thermal expansion decrease, while the yield strength (which correlates with hardness) and thermal conductivity increase. These changes in material properties at low temperature increases metal hardness and decreases the mechanical stress from exposure to rf electromagnetic fields. To test the validity of the improvement in breakdown rate, experiments were conducted with cryogenic accelerating cavities in the Accelerator Structure Test Area (ASTA) at SLAC National Accelerator Laboratory. A short 11.4 GHz standing wave accelerating structure was conditioned to an accelerating gradient of 250 MV/m at 45 K with 108 rf pulses. At gradients greater than 150 MV/m I observed a degradation in the intrinsic quality factor of the cavity, Q0. I developed a model for the change in Q0 using measured field emission currents and rf signals. I found that the Q 0 degradation is consistent with the rf power being absorbed by strong field emission currents accelerated inside the cavity. I measured rf breakdown rates for 45 K and found 2*10-4/pulse/meter when accounting for any change in Q0. These are the largest accelerating gradients for a structure with similar breakdown rates. The final chapter presents the design of an rf photoinjector electron source that uses the cryogenic normal conducting accelerator technology: the TOPGUN. With this cryogenic rf photoinjector, the beam brightness will increase by over an order of a magnitude when compared to the current photoinjector for the Linac Coherent Light Source (LCLS). When using the TOPGUN as the source for an X-ray Free Electron Laser, the higher brightness would allow for a decrease in the required length of the LCLS undulator by more than a factor of two.

Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

NASA Astrophysics Data System (ADS)

Onufriyev, Valery. V.

2001-02-01

It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient-γi with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure pcs) and cathode temperature Tk is constant too (Ub=constant with Tk=constant and pcs=constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-pcs and cathode temperature-Tk and is independent on IEG length-Δieg. On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly-the region of excited atoms-``Aston glow.'' .

Ground-Based High-Power Microwave Decoy Discrimination System.

DTIC Science & Technology

1987-12-23

understanding of plasma instabilities, self-induced magnetic effects , space - charge considerations, production of ion currents, etc. 3.3.4 Cross-Field...breakdown, due to small potential differences. Interaction volumes can therefore be large, avoiding breakdown and space - charge effects (at the price...the interference of the incident and reflected wave, and by the electrostatic forces of the surface (positive) and space charge (negative) trapped in

Energy dissipation on ion-accelerator grids during high-voltage breakdown

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menon, M.M.; Ponte, N.S.

1981-01-01

The effects of stored energy in the system capacitance across the accelerator grids during high voltage vacuum breakdown are examined. Measurements were made of the current flow and the energy deposition on the grids during breakdown. It is shown that only a portion (less than or equal to 40 J) of the total stored energy (congruent to 100 J) is actually dissipated on the grids. Most of the energy is released during the formation phase of the vacuum arc and is deposited primarily on the most positive grid. Certain abnormal situations led to energy depositions of about 200 J onmore » the grid, but the ion accelerator endured them without exhibiting any deterioration in performance.« less

High improvement in trap level density and direct current breakdown strength of block polypropylene by doping with a β-nucleating agent

NASA Astrophysics Data System (ADS)

Zhang, Chong; Zha, Jun-Wei; Yan, Hong-Da; Li, Wei-Kang; Dang, Zhi-Min

2018-02-01

Polypropylene is one kind of eco-friendly insulating material, which has attracted more attention for use in high voltage direct current (HVDC) insulation due to the long-distance transmission, low loss, and recyclability. In this work, the morphology and thermal and electrical properties of the block polypropylene with various β-nucleating agent (β-NA) contents were investigated. The relative fraction of the β-crystal can reach 64.7% after adding 0.05 wt. % β-NA. The β-NA also greatly reduced the melting point and improved the crystallization temperature. The electrical property results showed that the alternating and direct current breakdown strength and conduction current were obviously improved. In addition, space charge accumulation was significantly suppressed by introducing the β-NA. This work provides an attractive strategy of design and fabrication of polypropylene for HVDC application.

Fast Breakdown as Coronal/Ionization Waves?

NASA Astrophysics Data System (ADS)

Krehbiel, P. R.; Petersen, D.; da Silva, C. L.

2017-12-01

Studies of high-power narrow bipolar events (NBEs) have shown they are produced by a newly-recognized breakdown process called fast positive breakdown (FPB, Rison et al., 2016, doi:10.1038/ncomms10721). The breakdown was inferred to be produced by a system of positive streamers that propagate at high speed ( ˜3-6 x 107 m/s) due to occurring in a localized region of strong electric field. The polarity of the breakdown was determined from broadband interferometer (INTF) observations of the propagation direction of its VHF radiation, which was downward into the main negative charge region of a normally-electrified storm. Subsequent INTF observations being conducted in at Kennedy Space Center in Florida have shown a much greater incidence of NBEs than in New Mexico. Among the larger dataset have been clear-cut instances of some NBEs being produced by upward breakdown that would be of negative polarity. The speed and behavior of the negative breakdown is the same as that of the fast positive, leading to it being termed fast negative breakdown (FNB). The similarity (not too mention its occurrence) is surprising, given the fact that negative streamers and breakdown develops much differently than that of positive breakdown. The question is how this happens. In this study, we compare fast breakdown characteristics to well-known streamer properties as inferred from laboratory experiments and theoretical analysis. Additionally, we begin to explore the possibility that both polarities of fast breakdown are produced by what may be called coronal or ionization waves, in which the enhanced electric field produced by streamer or coronal breakdown of either polarity propagates away from the advancing front at the speed of light into a medium that is in a metastable condition of being at the threshold of hydrometeor-mediated corona onset or other ionization processes. The wave would develop at a faster speed than the streamer breakdown that gives rise to it, and thus would be somewhat analogous to a phase velocity. Once started, the breakdown would tend to be polarity independent. The main difference would be that FNB would be more difficult to initiate and therefore less common, which agrees with current observations.

Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation

NASA Astrophysics Data System (ADS)

Ren, F.; Hwang, Y.-H.; Pearton, S. J.; Patrick, Erin; Law, Mark E.

2015-03-01

Proton irradiation from the backside of the samples were employed to enhance off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates. Via holes were fabricated directly under the active area of the HEMTs by etching through the Si substrate for subsequent backside proton irradiation. By taking the advantage of the steep drop at the end of proton energy loss profile, the defects created by the proton irradiation from the backside of the sample could be precisely placed at specific locations inside the AlGaN/GaN HEMT structure. There were no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for the irradiated AlGaN/GaN HEMTs with the proton energy of 225 or 275 keV, for which the defects created by the proton irradiations were intentionally placed in the GaN buffer. HEMTs with defects placed in the 2 dimensional electron gas (2DEG) channel region and AlGaN barrier using 330 or 340 keV protons not only showed degradation of drain current, but also exhibited improvement of the off-state drain breakdown voltage. FLOODS TCAD finite-element simulations were performed to confirm the hypothesis of a virtual gate formed around the 2DEG region to reduce the peak electric field around the gate edges and increase the off-state drain breakdown voltage.

Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit

NASA Astrophysics Data System (ADS)

Yang, Jiancheng; Ren, F.; Tadjer, Marko; Pearton, S. J.; Kuramata, A.

2018-05-01

A key goal for Ga2O3 rectifiers is to achieve high forward currents and high reverse breakdown voltages. Field-plated β-Ga2O3 Schottky rectifiers with area 0.01 cm2, fabricated on 10 μm thick, lightly-doped drift regions (1.33 x 1016 cm-3) on heavily-doped (3.6 x 1018 cm-3) substrates, exhibited forward current density of 100A.cm-2 at 2.1 V, with absolute current of 1 A at this voltage and a reverse breakdown voltage (VB) of 650V. The on-resistance (RON) was 1.58 x 10-2 Ω.cm2, producing a figure of merit (VB2/RON) of 26.5 MW.cm-2. The Schottky barrier height of the Ni was 1.04 eV, with an ideality factor of 1.02. The on/off ratio was in the range 3.3 x 106 - 5.7 x 109 for reverse biases between 5 and 100V. The reverse recovery time was ˜30 ns for switching from +2V to -5V. The results show the capability of β-Ga2O3 rectifiers to achieve exceptional performance in both forward and reverse bias conditions.

Kinetic Modeling of RF Breakdown in High-Pressure Gas-filled Cavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tollestrup, A. V.; Yonehara, K.; Byrd, J. M.

2012-05-01

Recent studies have shown that high gradients can be achieved quickly in high-pressure gas-filled cavities without the need for long conditioning times, because the dense gas can dramatically reduce dark currents and multipacting. In this proj ect we use this high pressure technique to suppress effects of residual vacuum and geometry found in evacuated cavities to isolate and study the role of the metallic surfaces in RF cavity breakdown as a function of radiofrequency and surface preparation. A series of experiments at 805 MHz using hydrogen fill pressures up to 0.01 g/cm3 of H2 have demonstrated high electric field gradientsmore » and scaling with the DC Paschen law limit, up to ~30 MV/m, depending on the choice of electrode material. For higher fi eld stresses, the breakdown characteristics deviate from the Paschen law scaling. Fully-kinetic 0D collisional particle-in-cell (PIC) simulations give breakdown characteristics in H2 and H2/SF6 mixtures in good agreement with the 805 MHz experimental resu lts below this field stress threshold. The impact of these results on gas-filled RF accelerating cavity design will be discussed.« less

High PRF high current switch

DOEpatents

Moran, Stuart L.; Hutcherson, R. Kenneth

1990-03-27

A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

Accoustic Localization of Breakdown in Radio Frequency Accelerating Cavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lane, Peter Gwin

Current designs for muon accelerators require high-gradient radio frequency (RF) cavities to be placed in solenoidal magnetic fields. These fields help contain and efficiently reduce the phase space volume of source muons in order to create a usable muon beam for collider and neutrino experiments. In this context and in general, the use of RF cavities in strong magnetic fields has its challenges. It has been found that placing normal conducting RF cavities in strong magnetic fields reduces the threshold at which RF cavity breakdown occurs. To aid the effort to study RF cavity breakdown in magnetic fields, it wouldmore » be helpful to have a diagnostic tool which can localize the source of breakdown sparks inside the cavity. These sparks generate thermal shocks to small regions of the inner cavity wall that can be detected and localized using microphones attached to the outer cavity surface. Details on RF cavity sound sources as well as the hardware, software, and algorithms used to localize the source of sound emitted from breakdown thermal shocks are presented. In addition, results from simulations and experiments on three RF cavities, namely the Aluminum Mock Cavity, the High-Pressure Cavity, and the Modular Cavity, are also given. These results demonstrate the validity and effectiveness of the described technique for acoustic localization of breakdown.« less

Acoustic localization of breakdown in radio frequency accelerating cavities

NASA Astrophysics Data System (ADS)

Lane, Peter

Current designs for muon accelerators require high-gradient radio frequency (RF) cavities to be placed in solenoidal magnetic fields. These fields help contain and efficiently reduce the phase space volume of source muons in order to create a usable muon beam for collider and neutrino experiments. In this context and in general, the use of RF cavities in strong magnetic fields has its challenges. It has been found that placing normal conducting RF cavities in strong magnetic fields reduces the threshold at which RF cavity breakdown occurs. To aid the effort to study RF cavity breakdown in magnetic fields, it would be helpful to have a diagnostic tool which can localize the source of breakdown sparks inside the cavity. These sparks generate thermal shocks to small regions of the inner cavity wall that can be detected and localized using microphones attached to the outer cavity surface. Details on RF cavity sound sources as well as the hardware, software, and algorithms used to localize the source of sound emitted from breakdown thermal shocks are presented. In addition, results from simulations and experiments on three RF cavities, namely the Aluminum Mock Cavity, the High-Pressure Cavity, and the Modular Cavity, are also given. These results demonstrate the validity and effectiveness of the described technique for acoustic localization of breakdown.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bowring, Daniel; Freemire, Ben; Kochemirovskiy, Alexey

Ionization cooling of intense muon beams requires the operation of high-gradient, normal-conducting RF structures within multi-Tesla magnetic fields. The application of strong magnetic fields has been shown to lead to an increase in vacuum RF breakdown. This phenomenon imposes operational (i.e. gradient) limitations on cavities in ionization cooling channels, and has a bearing on the design and operation of other RF structures as well, such as photocathodes and klystrons. We present recent results from Fermilab's MuCool Test Area (MTA), in which 201 and 805 MHz cavities were operated at high power both with and without the presence of multi-Tesla magneticmore » fields. We present an analysis of damage due to breakdown in these cavities, as well as measurements related to dark current and their relation to a conceptual model describing breakdown phenomena.« less

Comparison between Trichel pulse in negative corona and self-pulsing in other configurations

NASA Astrophysics Data System (ADS)

Xia, Qing; Zhang, Yu; He, Feng; Qin, Yu; Jiang, Zhaorui; Ouyang, Jiting

2018-02-01

We present here a comparison study on self-pulsing phenomena in negative corona, hollow cathode discharges (HCD) and parallel-plate discharge in air. The voltage-current (V-I) curve, the waveforms of self-pulsed currents, and the time-resolved images of the pulsed discharge are measured under various operating conditions. It is experimentally evidenced that the Trichel pulse in a negative corona and the self-pulsing in HCD and/or parallel-plate discharge have similar features as well as spatial-temporal developing process. It is suggested that they should have a similar mechanism that the pulsing reflects the mode transition of discharge between the low-current Townsend and the high-current normal glow. The pulse rising corresponds to the breakdown and formation of temporal glow discharge in a background of low-current Townsend discharge, while the decay edge relates to the transition back to Townsend discharge. The pulse interval is the re-building process of the space charge layer of high density to ensure the glow breakdown.

Electric breakdown during the pulsed current spreading in the sand

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vasilyak, L. M., E-mail: vasilyak@ihed.ras.ru; Vetchinin, S. P.; Panov, V. A.

2016-03-15

Processes of spreading of the pulsed current from spherical electrodes and an electric breakdown in the quartz sand are studied experimentally. When the current density on the electrode exceeds the critical value, a nonlinear reduction occurs in the grounding resistance as a result of sparking in the soil. The critical electric field strengths for ionization and breakdown are determined. The ionization-overheating instability is shown to develop on the electrode, which leads to the current contraction and formation of plasma channels.

Characterization of breakdown behavior of diamond Schottky barrier diodes using impact ionization coefficients

NASA Astrophysics Data System (ADS)

Driche, Khaled; Umezawa, Hitoshi; Rouger, Nicolas; Chicot, Gauthier; Gheeraert, Etienne

2017-04-01

Diamond has the advantage of having an exceptionally high critical electric field owing to its large band gap, which implies its high ability to withstand high voltages. At this maximum electric field, the operation of Schottky barrier diodes (SBDs), as well as FETs, may be limited by impact ionization, leading to avalanche multiplication, and hence the devices may breakdown. In this study, three of the reported impact ionization coefficients for electrons, αn, and holes, αp, in diamond at room temperature (300 K) are analyzed. Experimental data on reverse operation characteristics obtained from two different diamond SBDs are compared with those obtained from their corresponding simulated structures. Owing to the crucial role played by the impact ionization rate in determining the carrier transport, the three reported avalanche parameters implemented affect the behavior not only of the breakdown voltage but also of the leakage current for the same structure.

Recent advances of high voltage AlGaN/GaN power HFETs

NASA Astrophysics Data System (ADS)

Uemoto, Yasuhiro; Ueda, Tetsuzo; Tanaka, Tsuyoshi; Ueda, Daisuke

2009-02-01

We review our recent advances of GaN-based high voltage power transistors. These are promising owing to low on-state resistance and high breakdown voltage taking advantages of superior material properties. However, there still remain a couple of technical issues to be solved for the GaN devices to replace the existing Si-based power devices. The most critical issue is to achieve normally-off operation which is strongly desired for the safety operation, however, it has been very difficult because of the built-in polarization electric field. Our new device called GIT (Gate Injection Transistor) utilizing conductivity modulation successfully achieves the normally-off operation keeping low on-state resistance. The fabricated GIT on a Si substrate exhibits threshold voltage of +1.0V. The obtained on-state resistance and off-state breakdown voltage were 2.6mΩ•cm2 and 800V, respectively. Remaining technical issue is to further increase the breakdown voltage. So far, the reported highest off-state breakdown voltage of AlGaN/GaN HFETs has been 1900V. Overcoming these issues by a novel device structure, we have demonstrated the world highest breakdown voltages of 10400V using thick poly-crystalline AlN as a passivation film and Via-holes through sapphire which enable very efficient layout of the lateral HFET array avoiding any undesired breakdown of passivation films. Since conventional wet or dry etching cannot be used for chemically stable sapphire, high power pulsed laser is used to form the via-holes. The presented GaN power devices demonstrate that GaN is advantageous for high voltage power switching applications replacing currently used Si-based power MOSFETs and IGBTs.

Compliance of the Stokes-Einstein model and breakdown of the Stokes-Einstein-Debye model for a urea-based supramolecular polymer of high viscosity.

PubMed

Świergiel, Jolanta; Bouteiller, Laurent; Jadżyn, Jan

2014-11-14

Impedance spectroscopy was used for the study of the static and dynamic behavior of the electrical conductivity of a hydrogen-bonded supramolecular polymer of high viscosity. The experimental data are discussed in the frame of the Stokes-Einstein and Stokes-Einstein-Debye models. It was found that the translational movement of the ions is due to normal Brownian diffusion, which was revealed by a fulfillment of Ohm's law by the electric current and a strictly exponential decay of the current after removing the electric stimulus. The dependence of the dc conductivity on the viscosity of the medium fulfills the Stokes-Einstein model quite well. An extension of the model, by including in it the conductivity relaxation time, is proposed in this paper. A breakdown of the Stokes-Einstein-Debye model is revealed by the relations of the dipolar relaxation time to the viscosity and to the dc ionic conductivity. The importance of the C=O···H-N hydrogen bonds in that breakdown is discussed.

A high-current rail-type gas switch with preionization by an additional corona discharge

NASA Astrophysics Data System (ADS)

Antipov, E. I.; Belozerov, O. S.; Krastelev, E. G.

2016-12-01

The characteristics of a high-current rail-type gas switch with preionization of the gas (air) in a spark gap by an additional corona discharge are investigated. The experiments were performed in a voltage range of 10-45 kV using a two-electrode switch consisting of two cylindrical electrodes with a diameter of 22 mm and a length of 100 mm and a set of laterally located corona-discharge needles. The requirements for the position and size of the needles are defined for which a corona discharge is ignited before a breakdown of the main gap and does not change to a sparking form, and the entire length of the rail electrodes is efficiently used. The fulfillment of these requirements ensures stable operation of the switch with a small variation of the pulse breakdown voltage, which is not more than 1% for a fixed voltage-pulse rise time in the range from 150 ns to 3.5 μs. A short delay time of the switch breakdown makes it possible to control the two-electrode switch by an overvoltage pulse of nanosecond duration.

Skin protection and breakdown in the ELBW infant. A national survey.

PubMed

Maguire, D P

1999-08-01

The purpose of this study was to learn how neonatal intensive care unit (NICU) nurses describe the problem of skin breakdown in the extremely low birth weight (ELBW) infant, examine interventions currently used to prevent and treat ELBW infant skin breakdown, and to learn how nurses describe and measure skin breakdown. Questionnaires were sent to 482 NICUs in the United States, and a response was requested from a registered nurse with at least 2 years NICU experience currently employed in the NICU who regularly managed ELBW infants. Questionnaires were returned from 215 NICUs (45%). Analysis revealed that an average of 21% of ELBW infants suffered skin breakdown during the 1st week of life. Nurses who reported the least problems with ELBW infant skin breakdown followed skin-care protocols that limited use of tape and made liberal use of Aquaphor to protect fragile skin. Recommendations from this study include the development of an objective tool to rate skin breakdown and further study of product efficacy used in the treatment of skin breakdown.

A new theoretical formulation of coupling thermo-electric breakdown in LDPE film under dc high applied fields

NASA Astrophysics Data System (ADS)

Boughariou, F.; Chouikhi, S.; Kallel, A.; Belgaroui, E.

2015-12-01

In this paper, we present a new theoretical and numerical formulation for the electrical and thermal breakdown phenomena, induced by charge packet dynamics, in low-density polyethylene (LDPE) insulating film under dc high applied field. The theoretical physical formulation is composed by the equations of bipolar charge transport as well as by the thermo-electric coupled equation associated for the first time in modeling to the bipolar transport problem. This coupled equation is resolved by the finite-element numerical model. For the first time, all bipolar transport results are obtained under non-uniform temperature distributions in the sample bulk. The principal original results show the occurring of very sudden abrupt increase in local temperature associated to a very sharp increase in external and conduction current densities appearing during the steady state. The coupling between these electrical and thermal instabilities reflects physically the local coupling between electrical conduction and thermal joule effect. The results of non-uniform temperature distributions induced by non-uniform electrical conduction current are also presented for several times. According to our formulation, the strong injection current is the principal factor of the electrical and thermal breakdown of polymer insulating material. This result is shown in this work. Our formulation is also validated experimentally.

New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications

NASA Astrophysics Data System (ADS)

Razavi, S. M.; Tahmasb Pour, S.; Najari, P.

2018-06-01

New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT) and lower region is AlGaN with heavier doping compared to barrier layer. Upper region in SI-HEMT and UN-HEMT reduces peak electric field in the channel and then improves breakdown voltage considerably. Lower region increases electron density in the two dimensional electron gas (2-DEG) and enhances drain current significantly. For instance, saturated drain current in SI-HEMT is about 100% larger than that in the conventional one. Moreover, the maximum breakdown voltage in the proposed structures is 65 V. This value is about 30% larger than that in the conventional transistor (50 V). Also, suggested structure reduces short channel effect such as DIBL. The maximum gm is obtained in UN-HEMT and conventional devices. Proposed structures improve breakdown voltage and saturated drain current and then enhance maximum output power density. Maximum output power density in the new structures is about 150% higher than that in the conventional.

Scintillation Breakdowns in Chip Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2008-01-01

Scintillations in solid tantalum capacitors are momentarily local breakdowns terminated by a self-healing or conversion to a high-resistive state of the manganese oxide cathode. This conversion effectively caps the defective area of the tantalum pentoxide dielectric and prevents short-circuit failures. Typically, this type of breakdown has no immediate catastrophic consequences and is often considered as nuisance rather than a failure. Scintillation breakdowns likely do not affect failures of parts under surge current conditions, and so-called "proofing" of tantalum chip capacitors, which is a controllable exposure of the part after soldering to voltages slightly higher than the operating voltage to verify that possible scintillations are self-healed, has been shown to improve the quality of the parts. However, no in-depth studies of the effect of scintillations on reliability of tantalum capacitors have been performed so far. KEMET is using scintillation breakdown testing as a tool for assessing process improvements and to compare quality of different manufacturing lots. Nevertheless, the relationship between failures and scintillation breakdowns is not clear, and this test is not considered as suitable for lot acceptance testing. In this work, scintillation breakdowns in different military-graded and commercial tantalum capacitors were characterized and related to the rated voltages and to life test failures. A model for assessment of times to failure, based on distributions of breakdown voltages, and accelerating factors of life testing are discussed.

Enhanced dielectric standoff and mechanical failure in field-structured composites

NASA Astrophysics Data System (ADS)

Martin, James E.; Tigges, Chris P.; Anderson, Robert A.; Odinek, Judy

1999-09-01

We report dielectric breakdown experiments on electric-field-structured composites of high-dielectric-constant BaTiO3 particles in an epoxy resin. These experiments show a significant increase in the dielectric standoff strength perpendicular to the field structuring direction, relative to control samples consisting of randomly dispersed particles. To understand the relation of this observation to microstructure, we apply a simple resistor-short breakdown model to three-dimensional composite structures generated from a dynamical simulation. In this breakdown model the composite material is assumed to conduct primarily through particle contacts, so the simulated structures are mapped onto a resistor network where the center of mass of each particle is a node that is connected to neighboring nodes by resistors of fixed resistance that irreversibly short to perfect conductors when the current reaches a threshold value. This model gives relative breakdown voltages that are in good agreement with experimental results. Finally, we consider a primitive model of the mechanical strength of a field-structured composite material, which is a current-driven, conductor-insulator fuse model. This model leads to a macroscopic fusing behavior and can be related to mechanical failure of the composite.

Observations of the initial stage of a rocket-and-wire-triggered lightning discharge

NASA Astrophysics Data System (ADS)

Zhang, Yang; Krehbiel, Paul R.; Zhang, Yijun; Lu, Weitao; Zheng, Dong; Xu, Liangtao; Huang, Zhigang

2017-05-01

Observations have been obtained of the initial stage of a rocket-and-wire-triggered lightning flash with a high-resolution broadband VHF interferometer. The discharge produced 54 precursor current pulses (PCPs) over 883 ms during the rocket's ascent. The interferometer observations show that the PCPs were produced by breakdown at the ascending tip of the rocket, and that individual PCPs were produced by weak upward positive breakdown over meters-scale distances, followed by more energetic, fast downward negative breakdown over several tens of meters distance. The average propagation speeds were 5 × 106 m s-1 and 3 × 107 m s-1, respectively. The sustained upward positive leader (UPL) was initiated by a rapid, repetitive burst of 14 precursor pulses. Upon initiation, the VHF radiation abruptly became continuous with time. Significantly, breakdown during the UPL appeared to extend the discharge in a similar manner to that of the precursor pulses.

Stability of Triggering of the Switch with Sharply Non-Uniform Electric Field at the Electrode with Negative Potential

NASA Astrophysics Data System (ADS)

Kovalchuk, B. M.; Zherlitsyn, A. A.; Kumpyak, E. V.

2017-12-01

Results of investigations into a two-electrode high-pressure gas switch with sharply non-uniform field at the electrode with negative potential operating in the self-breakdown regime with pulsed charging of a highvoltage capacitive energy storage for 100 μs to voltage exceeding 200 kV are presented. It is demonstrated that depending on the air pressure and the gap length, the corona-streamer discharge, whose current increases with voltage, arises in the switch at a voltage of 0.2-0.3 of the self-breakdown voltage. At the moment of switch self-breakdown, the corona-streamer discharge goes over to one or several spark channels. The standard deviation of the triggering moment can be within 1.5 μs, which corresponds to the standard deviation of the self-breakdown voltage less than 2 kV. The voltage stability can be better than 1.5%.

Investigation of multipactor breakdown in communication satellite microwave co-axial systems

NASA Astrophysics Data System (ADS)

Nagesh, S. K.; Revannasiddiah, D.; Shastry, S. V. K.

2005-01-01

Multipactor breakdown or multipactor discharge is a form of high frequency discharge that may occur in microwave components operating at very low pressures. Some RF components of multi-channel communication satellites have co-axial geometry and handle high RF power under near-vacuum conditions. The breakdown occurs due to secondary electron resonance, wherein electrons move back and forth in synchronism with the RF voltage across the gap between the inner and outer conductors of the co-axial structure. If the yield of secondary electrons from the walls of the co-axial structure is greater than unity, then the electron density increases with time and eventually leads to the breakdown. In this paper, the current due to the oscillating electrons in the co-axial geometry has been treated as a radially oriented Hertzian dipole. The electric field, due to this dipole, at any point in the coaxial structure, may then be determined by employing the dyadic Green's function technique. This field has been compared with the field that would exist in the absence of multipactor.

Dark current, breakdown, and magnetic field effects in a multicell, 805MHz cavity

NASA Astrophysics Data System (ADS)

Norem, J.; Wu, V.; Moretti, A.; Popovic, M.; Qian, Z.; Ducas, L.; Torun, Y.; Solomey, N.

2003-07-01

We present measurements of dark currents and x rays in a six cell 805MHz cavity, taken as part of an rf development program for muon cooling, which requires high power, high stored energy, low frequency cavities operating in a strong magnetic field. We have done the first systematic study of the behavior of high power rf in a strong (2.5 4T) magnetic field. Our measurements extend over a very large dynamic range in current and provide good fits to the Fowler-Nordheim field emission model assuming mechanical structures produce field enhancements at the surface. The locally enhanced field intensities we derive at the tips of these emitters are very large, (˜10 GV/m), and should produce tensile stresses comparable to the tensile strength of the copper cavity walls and should be capable of causing breakdown events. We also compare our data with estimates of tensile stresses from a variety of accelerating structures. Preliminary studies of the internal surface of the cavity and window are presented, which show splashes of copper with many sharp cone shaped protrusions and wires which can explain the experimentally measured field enhancements. We discuss a “cold copper” breakdown mechanism and briefly review alternatives. We also discuss a number of effects due to the 2.5T solenoidal fields on the cavity such as altered field emission due to mechanical deformation of emitters, and dark current ring beams, which are produced from the irises by E×B drifts during the nonrelativistic part of the acceleration process.

Electrostatic Discharge Properties of Irradiated Nanocomposites

DTIC Science & Technology

2009-03-01

47 24. Example Plot of Mean Current vs . Voltage Difference Curves ..................................48 25...across dielectric surfaces and prevent ESD arcing to very high voltage differentials (Figure 2) [7]. All of these drastic alterations in material...structure currents (3) Area thickness and dielectric strength of the material (4) Total charge involved in the event (5) Breakdown voltage (6) Current

Advances in high gradient normal conducting accelerator structures

DOE PAGES

Simakov, Evgenya Ivanovna; Dolgashev, Valery A.; Tantawi, Sami G.

2018-03-09

Here, this paper reviews the current state-of-the-art in understanding the phenomena of ultra-high vacuum radio-frequency (rf) breakdown in accelerating structures and the efforts to improve stable operation of the structures at accelerating gradients above 100 MV/m. Numerous studies have been conducted recently with the goal of understanding the dependence of the achievable accelerating gradients and breakdown rates on the frequency of operations, the geometry of the structure, material and method of fabrication, and operational temperature. Tests have been conducted with single standing wave accelerator cells as well as with the multi-cell traveling wave structures. Notable theoretical effort was directed atmore » understanding the physical mechanisms of the rf breakdown and its statistical behavior. Finally, the achievements presented in this paper are the result of the large continuous self-sustaining collaboration of multiple research institutions in the United States and worldwide.« less

Advances in high gradient normal conducting accelerator structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simakov, Evgenya Ivanovna; Dolgashev, Valery A.; Tantawi, Sami G.

Here, this paper reviews the current state-of-the-art in understanding the phenomena of ultra-high vacuum radio-frequency (rf) breakdown in accelerating structures and the efforts to improve stable operation of the structures at accelerating gradients above 100 MV/m. Numerous studies have been conducted recently with the goal of understanding the dependence of the achievable accelerating gradients and breakdown rates on the frequency of operations, the geometry of the structure, material and method of fabrication, and operational temperature. Tests have been conducted with single standing wave accelerator cells as well as with the multi-cell traveling wave structures. Notable theoretical effort was directed atmore » understanding the physical mechanisms of the rf breakdown and its statistical behavior. Finally, the achievements presented in this paper are the result of the large continuous self-sustaining collaboration of multiple research institutions in the United States and worldwide.« less

A 700 V narrow channel nJFET with low pinch-off voltage and suppressed drain-induced barrier lowering effect

NASA Astrophysics Data System (ADS)

Mao, Kun; Qiao, Ming; Zhang, WenTong; Zhang, Bo; Li, Zhaoji

2014-11-01

This paper proposes a 700 V narrow channel region triple-RESURF (reduced surface field) n-type junction field-effect transistor (NCT-nJFET). Compared to traditional structures, low pinch-off voltage (VP) with unobvious drain-induced barrier lowering (DIBL) effect and large saturated current (IDsat) are achieved. This is because p-type buried layer (Pbury) and PWELL are introduced to shape narrow n-type channel in JFET channel region. DIBL sensitivity (SDIBL) is firstly introduced in this paper to analyze the DIBL effect of high-voltage long-channel JFET. Ultra-high breakdown voltage is obtained by triple RESURF technology. Experimental results show that proposed NCT-nJFET achieves 24-V VP, 3.5% SDIBL, 2.3-mA IDsat, 800-V OFF-state breakdown voltage (OFF-BV) and 650-V ON-state breakdown voltage when VGS equals 0 V (ON-BV).

Current instability and burnout of HEMT structures

NASA Astrophysics Data System (ADS)

Vashchenko, V. A.; Sinkevitch, V. F.

1996-06-01

The burnout mechanism and region of high conductivity formation under breakdown of pseudomorphic GalnAs/GaAlAs and GaAs/GaAlAs HEMT structures have been studied in a pulsed and direct current (d.c.) regime. Peculiarities of the HEMT breakdown have been compared with a GaAs MESFET structure of the same topology. It appears that in all types of investigated structures the drain voltage increase is limited by the transition into a high conductivity state as a result of "parasitic" avalanche-injection conductivity modulation of the undoped GaAs or i-GaAs layer. It has been established that the transition into a high conductivity state is caused by holes from the drain avalanche region in the channel and is the result of a mutual intensification of the avalanche generation rate near the drain and the injection level from the source contact. It turns out that under a typical gate bias operation the transition in the high conductivity state is accompanied by a negative differential conductivity (NDC) and results in the formation of high current density filaments. The resulting high local overheating in the filament region is the cause of local melting and burnout of the HEMT structures.

Predicting the breakdown strength and lifetime of nanocomposites using a multi-scale modeling approach

NASA Astrophysics Data System (ADS)

Huang, Yanhui; Zhao, He; Wang, Yixing; Ratcliff, Tyree; Breneman, Curt; Brinson, L. Catherine; Chen, Wei; Schadler, Linda S.

2017-08-01

It has been found that doping dielectric polymers with a small amount of nanofiller or molecular additive can stabilize the material under a high field and lead to increased breakdown strength and lifetime. Choosing appropriate fillers is critical to optimizing the material performance, but current research largely relies on experimental trial and error. The employment of computer simulations for nanodielectric design is rarely reported. In this work, we propose a multi-scale modeling approach that employs ab initio, Monte Carlo, and continuum scales to predict the breakdown strength and lifetime of polymer nanocomposites based on the charge trapping effect of the nanofillers. The charge transfer, charge energy relaxation, and space charge effects are modeled in respective hierarchical scales by distinctive simulation techniques, and these models are connected together for high fidelity and robustness. The preliminary results show good agreement with the experimental data, suggesting its promise for use in the computer aided material design of high performance dielectrics.

Thermal and Electrical Effects of Partial Shade in Monolithic Thin-Film Photovoltaic Modules: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silverman, Timothy J.; Deceglie, Michael G.; Sun, Xingshu

2015-09-02

Photovoltaic cells can be damaged by reverse bias stress, which arises during service when a monolithically integrated thin-film module is partially shaded. We introduce a model for describing a module's internal thermal and electrical state, which cannot normally be measured. Using this model and experimental measurements, we present several results with relevance for reliability testing and module engineering: Modules with a small breakdown voltage experience less stress than those with a large breakdown voltage, with some exceptions for modules having light-enhanced reverse breakdown. Masks leaving a small part of the masked cells illuminated can lead to very high temperature andmore » current density compared to masks covering entire cells.« less

Thermal and Electrical Effects of Partial Shade in Monolithic Thin-Film Photovoltaic Modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silverman, Timothy J.; Deceglie, Michael G.; Sun, Xingshu

2015-06-14

Photovoltaic cells can be damaged by reverse bias stress, which arises during service when a monolithically integrated thin-film module is partially shaded. We introduce a model for describing a module's internal thermal and electrical state, which cannot normally be measured. Using this model and experimental measurements, we present several results with relevance for reliability testing and module engineering: Modules with a small breakdown voltage experience less stress than those with a large breakdown voltage, with some exceptions for modules having light-enhanced reverse breakdown. Masks leaving a small part of the masked cells illuminated can lead to very high temperature andmore » current density compared to masks covering entire cells.« less

A high-current rail-type gas switch with preionization by an additional corona discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antipov, E. I.; Belozerov, O. S.; Krastelev, E. G., E-mail: ekrastelev@yandex.ru

The characteristics of a high-current rail-type gas switch with preionization of the gas (air) in a spark gap by an additional corona discharge are investigated. The experiments were performed in a voltage range of 10–45 kV using a two-electrode switch consisting of two cylindrical electrodes with a diameter of 22 mm and a length of 100 mm and a set of laterally located corona-discharge needles. The requirements for the position and size of the needles are defined for which a corona discharge is ignited before a breakdown of the main gap and does not change to a sparking form, andmore » the entire length of the rail electrodes is efficiently used. The fulfillment of these requirements ensures stable operation of the switch with a small variation of the pulse breakdown voltage, which is not more than 1% for a fixed voltage-pulse rise time in the range from 150 ns to 3.5 μs. A short delay time of the switch breakdown makes it possible to control the two-electrode switch by an overvoltage pulse of nanosecond duration.« less

Transport Properties of ZnSe- ITO Hetero Junction

NASA Astrophysics Data System (ADS)

Ichibakase, Tsuyoshi

In this report, ITO(Indium Tin Oxide) was used on the glass substrates as the transparent electrode, and ZnSe layer was prepared by the vacuum deposition on this ITO. Then, the electrical characteristics of this sample were investigated by mans of the electric current transport analysis. The sample that ZnSe was prepared as 3.4 μm in case of ITO-ZnSe sample, has high density level at the junction surface. The ITO-ZnSe junction has two type of diffusion current. However, the ITO-ZnSe sample that ZnSe layer was prepared as 0.1 μm can be assumed as the ohmic contact, and ITO-ZnSe(0.1μm) -CdTe sample shows the avalanche breakdown, and it is considered that the avalanche breakdown occurs in CdTe layer. It is difficult to occur the avalanche breakdown, if ZnSe-CdTe junction has high-density level and CdTe layer has high-density defect. Hence, the ZnSe-CdTe sample that CdTe layer was prepared on ITO-ZnSe(0.1μm) substrate has not high-density level at the junction surface, and the CdTe layer with little lattice imperfection can be prepared. It found that ITO-ZnSe(0.1μm) substrate is available for the II-VI compounds semiconductor device through above analysis result.

Numerical analysis of the reverse blocking enhancement in High-K passivation AlGaN/GaN Schottky barrier diodes with gated edge termination

NASA Astrophysics Data System (ADS)

Bai, Zhiyuan; Du, Jiangfeng; Xin, Qi; Li, Ruonan; Yu, Qi

2018-02-01

We conducted a numerical analysis on high-K dielectric passivated AlGaN/GaN Schottky barrier diodes (HPG-SBDs) with a gated edge termination (GET). The reverse blocking characteristics were significantly enhanced without the stimulation of any parasitic effect by varying the dielectric thickness dge under the GET, thickness TP, and dielectric constant εr of the high-K passivation layer. The leakage current was reduced by increasing εr and decreasing dge. The breakdown voltage of the device was enhanced by increasing εr and TP. The highest breakdown voltage of 970 V and the lowest leakage current of 0.5 nA/mm were achieved under the conditions of εr = 80, TP = 800 nm, and dge = 10 nm. C-V simulation revealed that the HPG-SBDs induced no parasitic capacitance by comparing the integrated charges of the devices with different high-K dielectrics and different dge.

Fabrication and characterization of tensile In0.3Al0.7As barrier and compressive In0.7Ga0.3As channel pHEMTs having extremely low gate leakage for low-noise applications

NASA Astrophysics Data System (ADS)

Packeer, F.; Mohamad Isa, M.; Mat Jubadi, W.; Ian, K. W.; Missous, M.

2013-07-01

This study focuses on the area of the epitaxial design, fabrication and characterization of a 1 µm gate-length InP-based pseudomorphic high electron mobility transistor (pHEMT) using InGaAs-InAlAs material systems. The advanced epitaxial layer design incorporates a highly strained aluminum-rich Schottky contact barrier, an indium-rich channel and a double delta-doped structure, which significantly improves upon the conventional low-noise pHEMT which suffers from high gate current leakage and low breakdown voltage. The outstanding achievements of the new design approach are 99% less gate current leakage and a 73% increase in breakdown voltage, compared with the conventional design. Furthermore, no degradation in RF performance is observed in terms of the cut-off frequency in this new highly tensile strained design. The remarkable performance of this advanced pHEMT design facilitates the implementation of outstanding low-noise devices.

Enhanced dielectric properties due to space charge-induced interfacial polarization in multilayer polymer films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Xinyue; Tseng, Jung-Kai; Treufeld, Imre

We report that with the recent advancement of power electronics, polymer film capacitors have become increasingly important. However, the low temperature rating (up to 85 °C) and low energy density (5 J cm -3 at breakdown) of state-of-the-art biaxially oriented polypropylene (BOPP) films have been limiting factors for advanced power electronics. Based on our recent work, multilayer films (MLFs), which consist of a high energy density polymer [e.g., poly(vinylidene fluoride) (PVDF)] and a high breakdown/low loss polymer [e.g., polycarbonate (PC)], have shown potential to achieve high energy density (13–17 J cm -3), enhanced breakdown strength, high temperature tolerance, and lowmore » loss simultaneously. In this study, the dielectric properties of PC/PVDF 50/50 32- and 256-layer (32L and 256L) films were investigated. The breakdown strength of the 32L film was as high as 800 MV m -1 at room temperature, as compared to 600 MV m -1 of PVDF and 750 MV m-1 of PC. The temperature rating of the 32L film reached 120 °C, higher than that of BOPP. In addition, it was observed that the 32L film with thicker PC layers exhibited a higher breakdown strength and a lower DC conductivity than the 256L film with thinner PC layers at elevated temperatures. These differences were attributed to the difference in the interfacial polarization of space charges, which was further verified by thermally stimulated depolarization current spectroscopy. In conclusion, we conclude that interfacial polarization endows MLFs with the desirable dielectric properties for next generation film capacitors.« less

Enhanced dielectric properties due to space charge-induced interfacial polarization in multilayer polymer films

DOE PAGES

Chen, Xinyue; Tseng, Jung-Kai; Treufeld, Imre; ...

2017-09-15

We report that with the recent advancement of power electronics, polymer film capacitors have become increasingly important. However, the low temperature rating (up to 85 °C) and low energy density (5 J cm -3 at breakdown) of state-of-the-art biaxially oriented polypropylene (BOPP) films have been limiting factors for advanced power electronics. Based on our recent work, multilayer films (MLFs), which consist of a high energy density polymer [e.g., poly(vinylidene fluoride) (PVDF)] and a high breakdown/low loss polymer [e.g., polycarbonate (PC)], have shown potential to achieve high energy density (13–17 J cm -3), enhanced breakdown strength, high temperature tolerance, and lowmore » loss simultaneously. In this study, the dielectric properties of PC/PVDF 50/50 32- and 256-layer (32L and 256L) films were investigated. The breakdown strength of the 32L film was as high as 800 MV m -1 at room temperature, as compared to 600 MV m -1 of PVDF and 750 MV m-1 of PC. The temperature rating of the 32L film reached 120 °C, higher than that of BOPP. In addition, it was observed that the 32L film with thicker PC layers exhibited a higher breakdown strength and a lower DC conductivity than the 256L film with thinner PC layers at elevated temperatures. These differences were attributed to the difference in the interfacial polarization of space charges, which was further verified by thermally stimulated depolarization current spectroscopy. In conclusion, we conclude that interfacial polarization endows MLFs with the desirable dielectric properties for next generation film capacitors.« less

Kinetic Simulations of Dense Plasma Focus Breakdown

NASA Astrophysics Data System (ADS)

Schmidt, A.; Higginson, D. P.; Jiang, S.; Link, A.; Povilus, A.; Sears, J.; Bennett, N.; Rose, D. V.; Welch, D. R.

2015-11-01

A dense plasma focus (DPF) device is a type of plasma gun that drives current through a set of coaxial electrodes to assemble gas inside the device and then implode that gas on axis to form a Z-pinch. This implosion drives hydrodynamic and kinetic instabilities that generate strong electric fields, which produces a short intense pulse of x-rays, high-energy (>100 keV) electrons and ions, and (in deuterium gas) neutrons. A strong factor in pinch performance is the initial breakdown and ionization of the gas along the insulator surface separating the two electrodes. The smoothness and isotropy of this ionized sheath are imprinted on the current sheath that travels along the electrodes, thus making it an important portion of the DPF to both understand and optimize. Here we use kinetic simulations in the Particle-in-cell code LSP to model the breakdown. Simulations are initiated with neutral gas and the breakdown modeled self-consistently as driven by a charged capacitor system. We also investigate novel geometries for the insulator and electrodes to attempt to control the electric field profile. The initial ionization fraction of gas is explored computationally to gauge possible advantages of pre-ionization which could be created experimentally via lasers or a glow-discharge. Prepared by LLNL under Contract DE-AC52-07NA27344.

Low Current Surface Flashover for Initiation of Electric Propulsion Devices

NASA Astrophysics Data System (ADS)

Dary, Omar G.

There has been a recent increase in interest in miniaturization of propulsion systems for satellites. These systems are needed to propel micro- and nano-satellites, where platforms are much smaller than conventional satellites and require smaller levels of thrust. Micro-propulsion systems for these satellites are in their infancy and they must manage with smaller power systems and smaller propellant volumes. Electric propulsion systems operating on various types of electric discharges are typically used for these needs. One of the central components of such electrical micropropulsion systems are ignitor subsystems, which are required for creation the breakdown and initiation of the main discharge. Ignitors have to provide reliable ignition for entire lifetime of the micropropulsion system. Electric breakdown in vacuum usually require high voltage potentials of hundreds of kilovolts per mm to induce breakdown. The breakdown voltage can be significantly decreased (down to several kVs per mm) if dielectric surface flashover is utilized. However, classical dielectric surface flashover operates at large electric current (100s of Amperes) and associated with overheating and damage of the electrodes/dielectric assembly after several flashover events. The central idea of this work was to eliminate the damage to the flashover electrode assembly by limiting the flashover currents to low values in milliampere range (Low Current Surface Flashover -LCSF) and utilize LCSF system as an ignition source for the main discharge on the micropropulsion system. The main objective of this research was to create a robust LCSF ignition system, capable producing a large number of surface flashover triggering events without significant damage to the LCSF electrode assembly. The thesis aims to characterize the plasma plume created at LCSF, study electrodes ablation and identify conditions required for robust triggering of main discharge utilized on micro-propulsion system. Conditioning of a new LCSF assembly (flashover current was limited to <100 mA in all experiments) was measured and breakdown voltages in the range of 8kV to 12kV were observed for the fully conditioned assembly. No damage to the LCSF electrode assembly was observed after about 104 LCSF events. The LCSF assembly created sufficient amount of seed plasma in order to bridge a vacuum gap between the high-current electrodes and to reliably ignite high-current arcs (10A-12A arc were used in this work). Ignition of the high-current arc was observed at three different cases of LCSF with limiting currents 100 mA, 33 mA and 20 mA respectively. Plasma parameter measurements were conducted with variety of Langmuir probes inside the LCSF plume. Ion currents created by the LCSF were primarily expelled directly perpendicular from the insulator surface. The plasma expansion for the LCSF assembly was measured to be 2 x 106-6 x 106 cm/s. Plasma density was measured to range 10 10-1011 cm-3. The plasma density was maximal near the LCSF assembly and quickly reduced radially. Temporal decay of the plasma was observed on a time scale of about 5 micros after the LCSF event. The results of this work are significant for creation of ignitor for micropropulsion systems. LCSF system offers reliable triggering for numerous ignition pulses for entire lifetime of the micropropulsion system and reduces complexity and volume of the system by excluding moving parts and the need for an external gas tanks.

Laser initiated spark development in an air gap.

PubMed

Lindner, F W; Rudolph, W; Brumme, G; Fischer, H

1975-09-01

Spark development is studied by 20-nsec image converter photography. A diffuse and transparent prechannel bridges the gap from the top of the metal vapor jet, which has counterelectrode potential. The prechannel cuts off the development of the cone shaped jet with increasing gap voltage. The final breakdown is initiated by a z-axis, laser induced filament, which expands into the prechannel volume within less, similar10 nsec. This interval represents the final high current thermalization phase of the breakdown. Thermal expansion of the initial spark channel (Braginskii) follows.

Effects of load voltage on voltage breakdown modes of electrical exploding aluminum wires in air

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Jian; Li, Xingwen, E-mail: xwli@mail.xjtu.edu.cn; Yang, Zefeng

The effects of the load voltage on the breakdown modes are investigated in exploding aluminum wires driven by a 1 kA, 0.1 kA/ns pulsed current in air. From laser probing images taken by laser shadowgraphy, schlieren imaging, and interferometry, the position of the shockwave front, the plasma channel, and the wire core edge of the exploding product can be determined. The breakdown mode makes a transition from the internal mode, which involves breakdown inside the wire core, to the shunting mode, which involves breakdown in the compressed air, with decreasing charging voltage. The breakdown electrical field for a gaseous aluminum wire coremore » of nearly solid density is estimated to be more than 20 kV/cm, while the value for gaseous aluminum of approximately 0.2% solid density decreases to 15–20 kV/cm. The breakdown field in shunting mode is less than 20 kV/cm and is strongly affected by the vaporized aluminum, the desorbed gas, and the electrons emitted from the wire core during the current pause. Ohmic heating during voltage collapses will induce further energy deposition in the current channel and thus will result in different expansion speeds for both the wire core and the shockwave front in the different modes.« less

A Theory for the RF Surface Field for Various Metals at the Destructive Breakdown Limit

NASA Astrophysics Data System (ADS)

Wilson, Perry B.

2006-11-01

By destructive breakdown we mean a breakdown event that results in surface melting over a macroscopic area in a high E-field region of an accelerator structure. A plasma forms over the molten area, bombarding the surface with an intense ion current (˜108 A/cm2), equivalent to a pressure of about a thousand Atmospheres. This pressure in turn causes molten copper to migrate away from the iris tip, resulting in measurable changes in the iris shape. The breakdown process can be roughly divided into four stages: (1) the formation of "plasma spots" at field emission sites, each spot leaving a crater-like footprint; (2) crater clustering, and the formation of areas with hundreds of overlapping craters; (3) surface melting in the region of a crater cluster; (4) the process after surface melting that leads to destructive breakdown. The physics underlying each of these stages is developed, and a comparison is made between the theory and experimental evidence whenever possible. The key to preventing breakdown lies in stage (3). A single plasma spot emits a current of several amperes, a portion of which returns to impact the surrounding area with a power density on the order 107 Watt/cm2. This power density is not quite adequate to melt the surrounding surface on a time scale short compared to the rf pulse length. In a crater field, however, the impact areas from multiple plasma spots overlap to provide sufficient power density for surface melting over an area on the order of 0.1 mm2 or more. The key to preventing breakdown is to choose an iris tip material that requires the highest power density (proportional to the square of the rf surface field) for surface melting, taking into account the penetration depth of the impacting electrons. The rf surface field required for surface melting (relative to copper) has been calculated for a large number elementary metals, plus stainless-steel and carbon.

Synthesis Mechanism of Low-Voltage Praseodymium Oxide Doped Zinc Oxide Varistor Ceramics Prepared Through Modified Citrate Gel Coating

PubMed Central

Abdullah, Wan Rafizah Wan; Zakaria, Azmi; Ghazali, Mohd Sabri Mohd

2012-01-01

High demands on low-voltage electronics have increased the need for zinc oxide (ZnO) varistors with fast response, highly non-linear current-voltage characteristics and energy absorption capabilities at low breakdown voltage. However, trade-off between breakdown voltage and grain size poses a critical bottle-neck in the production of low-voltage varistors. The present study highlights the synthesis mechanism for obtaining praseodymium oxide (Pr6O11) based ZnO varistor ceramics having breakdown voltages of 2.8 to 13.3 V/mm through employment of direct modified citrate gel coating technique. Precursor powder and its ceramics were examined by means of TG/DTG, FTIR, XRD and FESEM analyses. The electrical properties as a function of Pr6O11 addition were analyzed on the basis of I-V characteristic measurement. The breakdown voltage could be adjusted from 0.01 to 0.06 V per grain boundary by controlling the amount of Pr6O11 from 0.2 to 0.8 mol%, without alteration of the grain size. The non-linearity coefficient, α, varied from 3.0 to 3.5 and the barrier height ranged from 0.56 to 0.64 eV. Breakdown voltage and α lowering with increasing Pr6O11 content were associated to reduction in the barrier height caused by variation in O vacancies at grain boundary. PMID:22606043

Synthesis mechanism of low-voltage praseodymium oxide doped zinc oxide varistor ceramics prepared through modified citrate gel coating.

PubMed

Abdullah, Wan Rafizah Wan; Zakaria, Azmi; Ghazali, Mohd Sabri Mohd

2012-01-01

High demands on low-voltage electronics have increased the need for zinc oxide (ZnO) varistors with fast response, highly non-linear current-voltage characteristics and energy absorption capabilities at low breakdown voltage. However, trade-off between breakdown voltage and grain size poses a critical bottle-neck in the production of low-voltage varistors. The present study highlights the synthesis mechanism for obtaining praseodymium oxide (Pr(6)O(11)) based ZnO varistor ceramics having breakdown voltages of 2.8 to 13.3 V/mm through employment of direct modified citrate gel coating technique. Precursor powder and its ceramics were examined by means of TG/DTG, FTIR, XRD and FESEM analyses. The electrical properties as a function of Pr(6)O(11) addition were analyzed on the basis of I-V characteristic measurement. The breakdown voltage could be adjusted from 0.01 to 0.06 V per grain boundary by controlling the amount of Pr(6)O(11) from 0.2 to 0.8 mol%, without alteration of the grain size. The non-linearity coefficient, α, varied from 3.0 to 3.5 and the barrier height ranged from 0.56 to 0.64 eV. Breakdown voltage and α lowering with increasing Pr(6)O(11) content were associated to reduction in the barrier height caused by variation in O vacancies at grain boundary.

High Voltage Discharge Profile on Soil Breakdown Using Impulse Discharge

NASA Astrophysics Data System (ADS)

Fajingbesi, F. E.; Midi, N. S.; Elsheikh, E. M. A.; Yusoff, S. H.

2017-06-01

Grounding terminals are mandatory in electrical appliance design as they provide safety route during overvoltage faults. The soil (earth) been the universal ground is assumed to be at zero electric potential. However, due to properties like moisture, pH and available nutrients; the electric potential may fluctuate between positive and negative values that could be harmful for internally connected circuits on the grounding terminal. Fluctuations in soil properties may also lead to current crowding effect similar to those seen at the emitters of semiconductor transistors. In this work, soil samples are subjected to high impulse voltage discharge and the breakdown characteristics was profiled. The results from profiling discharge characteristics of soil in this work will contribute to the optimization of grounding protection system design in terms of electrode placement. This would also contribute to avoiding grounding electrode current crowding, ground potential rise fault and electromagnetic coupling faults.

Advanced Materials for High Temperature, High Performance, Wide Bandgap Power Modules

NASA Astrophysics Data System (ADS)

O'Neal, Chad B.; McGee, Brad; McPherson, Brice; Stabach, Jennifer; Lollar, Richard; Liederbach, Ross; Passmore, Brandon

2016-01-01

Advanced packaging materials must be utilized to take full advantage of the benefits of the superior electrical and thermal properties of wide bandgap power devices in the development of next generation power electronics systems. In this manuscript, the use of advanced materials for key packaging processes and components in multi-chip power modules will be discussed. For example, to date, there has been significant development in silver sintering paste as a high temperature die attach material replacement for conventional solder-based attach due to the improved thermal and mechanical characteristics as well as lower processing temperatures. In order to evaluate the bond quality and performance of this material, shear strength, thermal characteristics, and void quality for a number of silver sintering paste materials were analyzed as a die attach alternative to solder. In addition, as high voltage wide bandgap devices shift from engineering samples to commercial components, passivation materials become key in preventing premature breakdown in power modules. High temperature, high dielectric strength potting materials were investigated to be used to encapsulate and passivate components internal to a power module. The breakdown voltage up to 30 kV and corresponding leakage current for these materials as a function of temperature is also presented. Lastly, high temperature plastic housing materials are important for not only discrete devices but also for power modules. As the operational temperature of the device and/or ambient temperature increases, the mechanical strength and dielectric properties are dramatically reduced. Therefore, the electrical characteristics such as breakdown voltage and leakage current as a function of temperature for housing materials are presented.

Electrical Breakdown in Water Vapor

NASA Astrophysics Data System (ADS)

Škoro, N.; Marić, D.; Malović, G.; Graham, W. G.; Petrović, Z. Lj.

2011-11-01

In this paper investigations of the voltage required to break down water vapor are reported for the region around the Paschen minimum and to the left of it. In spite of numerous applications of discharges in biomedicine, and recent studies of discharges in water and vapor bubbles and discharges with liquid water electrodes, studies of the basic parameters of breakdown are lacking. Paschen curves have been measured by recording voltages and currents in the low-current Townsend regime and extrapolating them to zero current. The minimum electrical breakdown voltage for water vapor was found to be 480 V at a pressure times electrode distance (pd) value of around 0.6 Torr cm (˜0.8 Pa m). The present measurements are also interpreted using (and add additional insight into) the developing understanding of relevant atomic and particularly surface processes associated with electrical breakdown.

High-voltage 4H-SiC trench MOS barrier Schottky rectifier with low forward voltage drop using enhanced sidewall layer

NASA Astrophysics Data System (ADS)

Cho, Doohyung; Sim, Seulgi; Park, Kunsik; Won, Jongil; Kim, Sanggi; Kim, Kwangsoo

2015-12-01

In this paper, a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier with an enhanced sidewall layer (ESL) is proposed. The proposed structure has a high doping concentration at the trench sidewall. This high doping concentration improves both the reverse blocking and forward characteristics of the structure. The ESL-TMBS rectifier has a 7.4% lower forward voltage drop and a 24% higher breakdown voltage. However, this structure has a reverse leakage current that is approximately three times higher than that of a conventional TMBS rectifier owing to the reduction in energy barrier height. This problem is solved when ESL is used partially, since its use provides a reverse leakage current that is comparable to that of a conventional TMBS rectifier. Thus, the forward voltage drop and breakdown voltage improve without any loss in static and dynamic characteristics in the ESL-TMBS rectifier compared with the performance of a conventional TMBS rectifier.

Deformation of contact surfaces in a vacuum interrupter after high-current interruptions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Haoran; Wang, Zhenxing, E-mail: zxwang@xjtu.edu.cn; Zhou, Zhipeng

2016-08-07

In a high-current interruption, the contact surface in a vacuum interrupter might be severely damaged by constricted vacuum arcs causing a molten area on it. As a result, a protrusion will be initiated by a transient recovery voltage after current zero, enhancing the local electric field and making breakdowns occur easier. The objective of this paper is to simulate the deformation process on the molten area under a high electric field by adopting the finite element method. A time-dependent Electrohydrodynamic model was established, and the liquid-gas interface was tracked by the level-set method. From the results, the liquid metal canmore » be deformed to a Taylor cone if the applied electric field is above a critical value. This value is correlated to the initial geometry of the liquid metal, which increases as the size of the liquid metal decreases. Moreover, the buildup time of a Taylor cone obeys the power law t = k × E{sup −3}, where E is the initial electric field and k is a coefficient related to the material property, indicating a temporal self-similar characteristic. In addition, the influence of temperature has little impact on the deformation but has great impact on electron emission. Finally, the possible reason to initiate a delayed breakdown is associated with the deformation. The breakdown does not occur immediately when the voltage is just applied upon the gap but is postponed to several milliseconds later when the tip is formed on the liquid metal.« less

Characteristics of edge breakdowns on Teflon samples

NASA Technical Reports Server (NTRS)

Yadlowsky, E. J.; Hazelton, R. C.; Churchill, R. J.

1980-01-01

The characteristics of electrical discharges induced on silverbacked Teflon samples irradiated by a monoenergetic electron beam have been studied under controlled laboratory conditions. Measurements of breakdown threshold voltages indicate a marked anisotropy in the electrical breakdown properties of Teflon: differences of up to 10 kV in breakdown threshold voltage are observed depending on the sample orientation. The material anisotropy can be utilized in spacecraft construction to reduce the magnitude of discharge currents.

Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

NASA Astrophysics Data System (ADS)

Mohanbabu, A.; Mohankumar, N.; Godwin Raj, D.; Sarkar, Partha; Saha, Samar K.

2017-03-01

The paper reports the results of a systematic theoretical study on efficient recessed-gate, double-heterostructure, and normally-OFF metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs), HfAlOx/AlGaN on Al2O3 substrate. In device architecture, a thin AlGaN layer is used in the AlGaN graded barrier MIS-HEMTs that offers an excellent enhancement-mode device operation with threshold voltage higher than 5.3 V and drain current above 0.64 A/mm along with high on-current/off-current ratio over 107 and subthreshold slope less than 73 mV/dec. In addition, a high OFF-state breakdown voltage of 1200 V is achieved for a device with a gate-to-drain distance and field-plate length of 15 μm and 5.3 μm, respectively at a drain current of 1 mA/mm with a zero gate bias, and the substrate grounded. The numerical device simulation results show that in comparison to a conventional AlGaN/GaN MIS-HEMT of similar design, a graded barrier MIS-HEMT device exhibits a better interface property, remarkable suppression of leakage current, and a significant improvement of breakdown voltage for HfAlOx gate dielectric. Finally, the benefit of HfAlOx graded-barrier AlGaN MIS-HEMTs based switching devices is evaluated on an ultra-low-loss converter circuit.

Numerical modeling of high-voltage circuit breaker arcs and their interraction with the power system

NASA Astrophysics Data System (ADS)

Orama, Lionel R.

In this work the interaction between series connected gas and vacuum circuit breaker arcs has been studied. The breakdown phenomena in vacuum interrupters during the post arc current period have been of special interest. Numerical models of gas and vacuum arcs were developed in the form of black box models. Especially, the vacuum post arc model was implemented by combining the existing transition model with an ion density function and expressions for the breakdown mechanisms. The test series studied reflect that for electric fields on the order of 10sp7V/m over the anode, the breakdown of the vacuum gap can result from a combination of both thermal and electrical stresses. For a particular vacuum device, the vacuum model helps to find the interruption limits of the electric field and power density over the anode. The series connection of gas and vacuum interrupters always performs better than the single gas device. Moreover, to take advantage of the good characteristics of both devices, the time between the current zero crossing in each interrupter can be changed. This current zero synchronization is controlled by changing the capacitance in parallel to the gas device. This gas/vacuum interrupter is suitable for interruption of very stressful short circuits in which the product of the dI/dt before current zero and the dV/dt after current zero is very high. Also, a single SF6 interrupter can be replaced by an air circuit breaker of the same voltage rating in series with a vacuum device without compromising the good performance of the SF6 device. Conceptually, a series connected vacuum device can be used for high voltage applications with equal distribution of electrical stresses between the individual interrupters. The equalization can be made by a sequential opening of the individual contact pairs, beginning with the interruptors that are closer to ground potential. This could eliminate the use of grading capacitors.

Experimental high gradient testing of a 17.1 GHz photonic band-gap accelerator structure

DOE PAGES

Munroe, Brian J.; Zhang, JieXi; Xu, Haoran; ...

2016-03-29

In this paper, we report the design, fabrication, and high gradient testing of a 17.1 GHz photonic band-gap (PBG) accelerator structure. Photonic band-gap (PBG) structures are promising candidates for electron accelerators capable of high-gradient operation because they have the inherent damping of high order modes required to avoid beam breakup instabilities. The 17.1 GHz PBG structure tested was a single cell structure composed of a triangular array of round copper rods of radius 1.45 mm spaced by 8.05 mm. The test assembly consisted of the test PBG cell located between conventional (pillbox) input and output cells, with input power ofmore » up to 4 MW from a klystron supplied via a TM 01 mode launcher. Breakdown at high gradient was observed by diagnostics including reflected power, downstream and upstream current monitors and visible light emission. The testing procedure was first benchmarked with a conventional disc-loaded waveguide structure, which reached a gradient of 87 MV=m at a breakdown probability of 1.19 × 10 –1 per pulse per meter. The PBG structure was tested with 100 ns pulses at gradient levels of less than 90 MV=m in order to limit the surface temperature rise to 120 K. The PBG structure reached up to 89 MV=m at a breakdown probability of 1.09 × 10 –1 per pulse per meter. These test results show that a PBG structure can simultaneously operate at high gradients and low breakdown probability, while also providing wakefield damping.« less

The energy requirements of an aircraft triggered discharge

NASA Astrophysics Data System (ADS)

Bicknell, J. A.; Shelton, R. W.

The corona produced at aircraft surfaces requires an energy input before the corona can develop into a high current discharge and, thus, a possible lightning stroke. This energy must be drawn from the space charge field of the thundercloud and, since this is of low density, the unique propagation characteristics of positive corona streamers may be important. Estimates of the energy made available by the propagation are compared with laboratory measurements of the minimum energy input required to trigger a breakdown. The comparison indicates a minimum streamer range for breakdown of several tens of meters. Also estimated is the energy released as a consequence of streamer-hydrometer interactions; this is shown to be significant so that breakdown could depend upon the precipitation rate within the cloud. Inhibiting streamer production may therefore provide an aircraft with a degree of corona protection.

High voltage and high current density vertical GaN power diodes

DOE PAGES

Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M.; ...

2016-01-01

We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm 2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm 2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.

The smooth transition from field emission to a self-sustained plasma in microscale electrode gaps at atmospheric pressure

NASA Astrophysics Data System (ADS)

Bilici, Mihai A.; Haase, John R.; Boyle, Calvin R.; Go, David B.; Sankaran, R. Mohan

2016-06-01

We report on the existence of a smooth transition from field emission to a self-sustained plasma in microscale electrode geometries at atmospheric pressure. This behavior, which is not found at macroscopic scales or low pressures, arises from the unique combination of large electric fields that are created in microscale dimensions to produce field-emitted electrons and the high pressures that lead to collisional ionization of the gas. Using a tip-to-plane electrode geometry, currents less than 10 μA are measured at onset voltages of ˜200 V for gaps less than 5 μm, and analysis of the current-voltage (I-V) relationship is found to follow Fowler-Nordheim behavior, confirming field emission. As the applied voltage is increased, gas breakdown occurs smoothly, initially resulting in the formation of a weak, partial-like glow and then a self-sustained glow discharge. Remarkably, this transition is essentially reversible, as no significant hysteresis is observed during forward and reverse voltage sweeps. In contrast, at larger electrode gaps, no field emission current is measured and gas breakdown occurs abruptly at higher voltages of ˜400 V, absent of any smooth transition from the pre-breakdown condition and is characterized only by glow discharge formation.

Coupled ion redistribution and electronic breakdown in low-alkali boroaluminosilicate glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Doo Hyun, E-mail: cooldoo@add.re.kr; Randall, Clive, E-mail: car4@psu.edu; Furman, Eugene, E-mail: euf1@psu.edu

2015-08-28

Dielectrics with high electrostatic energy storage must have exceptionally high dielectric breakdown strength at elevated temperatures. Another important consideration in designing a high performance dielectric is understanding the thickness and temperature dependence of breakdown strengths. Here, we develop a numerical model which assumes a coupled ionic redistribution and electronic breakdown is applied to predict the breakdown strength of low-alkali glass. The ionic charge transport of three likely charge carriers (Na{sup +}, H{sup +}/H{sub 3}O{sup +}, Ba{sup 2+}) was used to calculate the ionic depletion width in low-alkali boroaluminosilicate which can further be used for the breakdown modeling. This model predictsmore » the breakdown strengths in the 10{sup 8}–10{sup 9 }V/m range and also accounts for the experimentally observed two distinct thickness dependent regions for breakdown. Moreover, the model successfully predicts the temperature dependent breakdown strength for low-alkali glass from room temperature up to 150 °C. This model showed that breakdown strengths were governed by minority charge carriers in the form of ionic transport (mostly sodium) in these glasses.« less

High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy

NASA Astrophysics Data System (ADS)

Sugiyama, Hiroki; Kosugi, Toshihiko; Yokoyama, Haruki; Murata, Koichi; Yamane, Yasuro; Tokumitsu, Masami; Enoki, Takatomo

2008-04-01

This paper reports InGaAs/InP composite-channel (CC) high electron mobility transistors (HEMTs) grown by metal-organic vapor-phase epitaxy (MOVPE) with excellent breakdown and high-speed characteristics. Atomic force microscopy (AFM) reveals high-quality heterointerfaces between In(Ga,Al)As and In(Al)P. Fabricated 80-nm-gate CC HEMTs exhibit on- and off-state breakdown (burnout) voltages estimated at higher than 3 and 8 V. An excellent current-gain cutoff frequency ( fT) of 186 GHz is also obtained in the CC HEMTs. The on-wafer uniformity of CC-HEMT characteristics is comparable to those of our mature 100-nm-gate InGaAs single-channel HEMTs. Bias-stress aging tests reveals that the lifetime of CC HEMTs is expected to be comparable to that of our conventional InGaAs single-channel HEMTs.

Current conduction mechanism and electrical break-down in InN grown on GaN

NASA Astrophysics Data System (ADS)

Kuzmik, J.; Fleury, C.; Adikimenakis, A.; Gregušová, D.; Ťapajna, M.; Dobročka, E.; Haščík, Š.; Kučera, M.; Kúdela, R.; Androulidaki, M.; Pogany, D.; Georgakilas, A.

2017-06-01

Current conduction mechanism, including electron mobility, electron drift velocity (vd) and electrical break-down have been investigated in a 0.5 μm-thick (0001) InN layer grown by molecular-beam epitaxy on a GaN/sapphire template. Electron mobility (μ) of 1040 cm2/Vs and a free electron concentration (n) of 2.1 × 1018 cm-3 were measured at room temperature with only a limited change down to 20 K, suggesting scattering on dislocations and ionized impurities. Photoluminescence spectra and high-resolution X-ray diffraction correlated with the Hall experiment showing an emission peak at 0.69 eV, a full-width half-maximum of 30 meV, and a dislocation density Ndis ˜ 5.6 × 1010 cm-2. Current-voltage (I-V) characterization was done in a pulsed (10 ns-width) mode on InN resistors prepared by plasma processing and Ohmic contacts evaporation. Resistors with a different channel length ranging from 4 to 15.8 μm obeyed the Ohm law up to an electric field intensity Eknee ˜ 22 kV/cm, when vd ≥ 2.5 × 105 m/s. For higher E, I-V curves were nonlinear and evolved with time. Light emission with a photon energy > 0.7 eV has been observed already at modest Erad of ˜ 8.3 kV/cm and consequently, a trap-assisted interband tunneling was suggested to play a role. At Eknee ˜ 22 kV/cm, we assumed electron emission from traps, with a positive feed-back for the current enhancement. Catastrophic break-down appeared at E ˜ 25 kV/cm. Reduction of Ndis was suggested to fully exploit InN unique prospects for future high-frequency devices.

Alignment of Boron Nitride Nanofibers in Epoxy Composite Films for Thermal Conductivity and Dielectric Breakdown Strength Improvement.

PubMed

Wang, Zhengdong; Liu, Jingya; Cheng, Yonghong; Chen, Siyu; Yang, Mengmeng; Huang, Jialiang; Wang, Hongkang; Wu, Guanglei; Wu, Hongjing

2018-04-15

Development of polymer-based composites with simultaneously high thermal conductivity and breakdown strength has attracted considerable attention owing to their important applications in both electronic and electric industries. In this work, boron nitride (BN) nanofibers (BNNF) are successfully prepared as fillers, which are used for epoxy composites. In addition, the BNNF in epoxy composites are aligned by using a film casting method. The composites show enhanced thermal conductivity and dielectric breakdown strength. For instance, after doping with BNNF of 2 wt%, the thermal conductivity of composites increased by 36.4% in comparison with that of the epoxy matrix. Meanwhile, the breakdown strength of the composite with 1 wt% BNNF is 122.9 kV/mm, which increased by 6.8% more than that of neat epoxy (115.1 kV/mm). Moreover, the composites have maintained a low dielectric constant and alternating current conductivity among the range of full frequency, and show a higher thermal decomposition temperature and glass-transition temperature. The composites with aligning BNNF have wide application prospects in electronic packaging material and printed circuit boards.

Alignment of Boron Nitride Nanofibers in Epoxy Composite Films for Thermal Conductivity and Dielectric Breakdown Strength Improvement

PubMed Central

Liu, Jingya; Cheng, Yonghong; Chen, Siyu; Yang, Mengmeng; Huang, Jialiang

2018-01-01

Development of polymer-based composites with simultaneously high thermal conductivity and breakdown strength has attracted considerable attention owing to their important applications in both electronic and electric industries. In this work, boron nitride (BN) nanofibers (BNNF) are successfully prepared as fillers, which are used for epoxy composites. In addition, the BNNF in epoxy composites are aligned by using a film casting method. The composites show enhanced thermal conductivity and dielectric breakdown strength. For instance, after doping with BNNF of 2 wt%, the thermal conductivity of composites increased by 36.4% in comparison with that of the epoxy matrix. Meanwhile, the breakdown strength of the composite with 1 wt% BNNF is 122.9 kV/mm, which increased by 6.8% more than that of neat epoxy (115.1 kV/mm). Moreover, the composites have maintained a low dielectric constant and alternating current conductivity among the range of full frequency, and show a higher thermal decomposition temperature and glass-transition temperature. The composites with aligning BNNF have wide application prospects in electronic packaging material and printed circuit boards. PMID:29662038

In Situ observation of dark current emission in a high gradient rf photocathode gun

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shao, Jiahang; Shi, Jiaru; Antipov, Sergey P.

Undesirable electron field emission (also known as dark current) in high gradient rf photocathode guns deteriorates the quality of the photoemission current and limits the operational gradient. To improve the understanding of dark current emission, a high-resolution (~100 μm) dark current imaging experiment has been performed in an L-band photocathode gun operating at ~100 MV/m of surface gradient. Scattered strong emission areas with high current have been observed on the cathode. The field enhancement factor β of selected regions on the cathode has been measured. Finally, the postexaminations with scanning electron microscopy and white light interferometry reveal the origins ofmore » ~75% strong emission areas overlap with the spots where rf breakdown has occurred.« less

In Situ observation of dark current emission in a high gradient rf photocathode gun

DOE PAGES

Shao, Jiahang; Shi, Jiaru; Antipov, Sergey P.; ...

2016-08-15

Undesirable electron field emission (also known as dark current) in high gradient rf photocathode guns deteriorates the quality of the photoemission current and limits the operational gradient. To improve the understanding of dark current emission, a high-resolution (~100 μm) dark current imaging experiment has been performed in an L-band photocathode gun operating at ~100 MV/m of surface gradient. Scattered strong emission areas with high current have been observed on the cathode. The field enhancement factor β of selected regions on the cathode has been measured. Finally, the postexaminations with scanning electron microscopy and white light interferometry reveal the origins ofmore » ~75% strong emission areas overlap with the spots where rf breakdown has occurred.« less

Effects of thermal and electrical stressing on the breakdown behavior of space wiring

NASA Technical Reports Server (NTRS)

Hammoud, Ahmad; Stavnes, Mark; Suthar, Jayant; Laghari, Javaid

1995-01-01

Several failures in the electrical wiring systems of many aircraft and space vehicles have been attributed to arc tracking and damaged insulation. In some instances, these failures proved to be very costly as they have led to the loss of many aircraft and imperilment of space missions. Efforts are currently underway to develop lightweight, reliable, and arc track resistant wiring for aerospace applications. In this work, six wiring constructions were evaluated in terms of their breakdown behavior as a function of temperature. These hybrid constructions employed insulation consisting of Kapton, Teflon, and cross-linked Tefzel. The properties investigated included the 400 Hz AC dielectric strength at ambient and 200 C, and the lifetime at high temperature with an applied bias of 40, 60, and 80% of breakdown voltage level. The results obtained are discussed, and conclusions are made concerning the suitability of the wiring constructions investigated for aerospace applications.

Effects of thermal and electrical stressing on the breakdown behavior of space wiring

NASA Astrophysics Data System (ADS)

Hammoud, Ahmad; Stavnes, Mark; Suthar, Jayant; Laghari, Javaid

1995-06-01

Several failures in the electrical wiring systems of many aircraft and space vehicles have been attributed to arc tracking and damaged insulation. In some instances, these failures proved to be very costly as they have led to the loss of many aircraft and imperilment of space missions. Efforts are currently underway to develop lightweight, reliable, and arc track resistant wiring for aerospace applications. In this work, six wiring constructions were evaluated in terms of their breakdown behavior as a function of temperature. These hybrid constructions employed insulation consisting of Kapton, Teflon, and cross-linked Tefzel. The properties investigated included the 400 Hz AC dielectric strength at ambient and 200 C, and the lifetime at high temperature with an applied bias of 40, 60, and 80% of breakdown voltage level. The results obtained are discussed, and conclusions are made concerning the suitability of the wiring constructions investigated for aerospace applications.

Directed Self-Assembly of Block Copolymers for High Breakdown Strength Polymer Film Capacitors.

PubMed

Samant, Saumil P; Grabowski, Christopher A; Kisslinger, Kim; Yager, Kevin G; Yuan, Guangcui; Satija, Sushil K; Durstock, Michael F; Raghavan, Dharmaraj; Karim, Alamgir

2016-03-01

Emerging needs for fast charge/discharge yet high-power, lightweight, and flexible electronics requires the use of polymer-film-based solid-state capacitors with high energy densities. Fast charge/discharge rates of film capacitors on the order of microseconds are not achievable with slower charging conventional batteries, supercapacitors and related hybrid technologies. However, the current energy densities of polymer film capacitors fall short of rising demand, and could be significantly enhanced by increasing the breakdown strength (EBD) and dielectric permittivity (εr) of the polymer films. Co-extruded two-homopolymer component multilayered films have demonstrated much promise in this regard showing higher EBD over that of component polymers. Multilayered films can also help incorporate functional features besides energy storage, such as enhanced optical, mechanical, thermal and barrier properties. In this work, we report accomplishing multilayer, multicomponent block copolymer dielectric films (BCDF) with soft-shear driven highly oriented self-assembled lamellar diblock copolymers (BCP) as a novel application of this important class of self-assembling materials. Results of a model PS-b-PMMA system show ∼50% enhancement in EBD of self-assembled multilayer lamellar BCP films compared to unordered as-cast films, indicating that the breakdown is highly sensitive to the nanostructure of the BCP. The enhancement in EBD is attributed to the "barrier effect", where the multiple interfaces between the lamellae block components act as barriers to the dielectric breakdown through the film. The increase in EBD corresponds to more than doubling the energy storage capacity using a straightforward directed self-assembly strategy. This approach opens a new nanomaterial paradigm for designing high energy density dielectric materials.

Directed self-assembly of block copolymers for high breakdown strength polymer film capacitors

DOE PAGES

Samant, Saumil P.; Grabowski, Christopher A.; Kisslinger, Kim; ...

2016-03-04

Emerging needs for fast charge/discharge yet high-power, lightweight, and flexible electronics requires the use of polymer-film-based solid-state capacitors with high energy densities. Fast charge/discharge rates of film capacitors on the order of microseconds are not achievable with slower charging conventional batteries, supercapacitors and related hybrid technologies. However, the current energy densities of polymer film capacitors fall short of rising demand, and could be significantly enhanced by increasing the breakdown strength (E BD) and dielectric permittivity (ε r) of the polymer films. Co-extruded two-homopolymer component multilayered films have demonstrated much promise in this regard showing higher E BD over that ofmore » component polymers. Multilayered films can also help incorporate functional features besides energy storage, such as enhanced optical, mechanical, thermal and barrier properties. In this work, we report accomplishing multilayer, multicomponent block copolymer dielectric films (BCDF) with soft-shear driven highly oriented self-assembled lamellar diblock copolymers (BCP) as a novel application of this important class of self-assembling materials. Results of a model PS- b-PMMA system show ~50% enhancement in E BD of self-assembled multilayer lamellar BCP films compared to unordered as-cast films, indicating that the breakdown is highly sensitive to the nanostructure of the BCP. The enhancement in E BD is attributed to the “barrier effect”, where the multiple interfaces between the lamellae block components act as barriers to the dielectric breakdown through the film. The increase in E BD corresponds to more than doubling the energy storage capacity using a straightforward directed self-assembly strategy. Lastly, this approach opens a new nanomaterial paradigm for designing high energy density dielectric materials.« less

Identification and Analysis of Partial Shading Breakdown Sites in CuIn xGa (1-x)Se 2 Modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palmiotti, Elizabeth; Johnston, Steven; Gerber, Andreas

In this paper, CuIn xGa (1-x) (CIGS) mini-modules are stressed under reverse bias, resembling partial shading conditions, to predict and characterize where failures occur. Partial shading can cause permanent damage in the form of 'wormlike' defects on thin-film modules due to thermal runaway. This results in module-scale power losses. We have used dark lock-in thermography (DLIT) to spatially observe localized heating when reverse-bias breakdown occurs on various CIGS mini-modules. For better understanding of how and where these defects originated and propagated, we have developed techniques where the current is limited during reverse-bias stressing. This allows for DLIT-based detection and detailedmore » studying of the region where breakdown is initiated before thermal runaway leads to permanent damage. Statistics of breakdown sites using current-limited conditions has allowed for reasonable identification of the as-grown defects where permanent breakdown will likely originate. Scanning electron microscope results and wormlike defect analysis show that breakdown originates in defects such as small pits, craters, or cracks in the CIGS layer, and the wormlike defects propagate near the top CIGS interface.« less

Identification and Analysis of Partial Shading Breakdown Sites in CuIn xGa (1-x)Se 2 Modules

DOE PAGES

Palmiotti, Elizabeth; Johnston, Steven; Gerber, Andreas; ...

2017-12-20

In this paper, CuIn xGa (1-x) (CIGS) mini-modules are stressed under reverse bias, resembling partial shading conditions, to predict and characterize where failures occur. Partial shading can cause permanent damage in the form of 'wormlike' defects on thin-film modules due to thermal runaway. This results in module-scale power losses. We have used dark lock-in thermography (DLIT) to spatially observe localized heating when reverse-bias breakdown occurs on various CIGS mini-modules. For better understanding of how and where these defects originated and propagated, we have developed techniques where the current is limited during reverse-bias stressing. This allows for DLIT-based detection and detailedmore » studying of the region where breakdown is initiated before thermal runaway leads to permanent damage. Statistics of breakdown sites using current-limited conditions has allowed for reasonable identification of the as-grown defects where permanent breakdown will likely originate. Scanning electron microscope results and wormlike defect analysis show that breakdown originates in defects such as small pits, craters, or cracks in the CIGS layer, and the wormlike defects propagate near the top CIGS interface.« less

Remote detection of radioactive material using high-power pulsed electromagnetic radiation.

PubMed

Kim, Dongsung; Yu, Dongho; Sawant, Ashwini; Choe, Mun Seok; Lee, Ingeun; Kim, Sung Gug; Choi, EunMi

2017-05-09

Remote detection of radioactive materials is impossible when the measurement location is far from the radioactive source such that the leakage of high-energy photons or electrons from the source cannot be measured. Current technologies are less effective in this respect because they only allow the detection at distances to which the high-energy photons or electrons can reach the detector. Here we demonstrate an experimental method for remote detection of radioactive materials by inducing plasma breakdown with the high-power pulsed electromagnetic waves. Measurements of the plasma formation time and its dispersion lead to enhanced detection sensitivity compared to the theoretically predicted one based only on the plasma on and off phenomena. We show that lower power of the incident electromagnetic wave is sufficient for plasma breakdown in atmospheric-pressure air and the elimination of the statistical distribution is possible in the presence of radioactive material.

Homogeneous/Inhomogeneous-Structured Dielectrics and their Energy-Storage Performances.

PubMed

Yao, Zhonghua; Song, Zhe; Hao, Hua; Yu, Zhiyong; Cao, Minghe; Zhang, Shujun; Lanagan, Michael T; Liu, Hanxing

2017-05-01

The demand for dielectric capacitors with higher energy-storage capability is increasing for power electronic devices due to the rapid development of electronic industry. Existing dielectrics for high-energy-storage capacitors and potential new capacitor technologies are reviewed toward realizing these goals. Various dielectric materials with desirable permittivity and dielectric breakdown strength potentially meeting the device requirements are discussed. However, some significant limitations for current dielectrics can be ascribed to their low permittivity, low breakdown strength, and high hysteresis loss, which will decrease their energy density and efficiency. Thus, the implementation of dielectric materials for high-energy-density applications requires the comprehensive understanding of both the materials design and processing. The optimization of high-energy-storage dielectrics will have far-reaching impacts on the sustainable energy and will be an important research topic in the near future. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Remote detection of radioactive material using high-power pulsed electromagnetic radiation

PubMed Central

Kim, Dongsung; Yu, Dongho; Sawant, Ashwini; Choe, Mun Seok; Lee, Ingeun; Kim, Sung Gug; Choi, EunMi

2017-01-01

Remote detection of radioactive materials is impossible when the measurement location is far from the radioactive source such that the leakage of high-energy photons or electrons from the source cannot be measured. Current technologies are less effective in this respect because they only allow the detection at distances to which the high-energy photons or electrons can reach the detector. Here we demonstrate an experimental method for remote detection of radioactive materials by inducing plasma breakdown with the high-power pulsed electromagnetic waves. Measurements of the plasma formation time and its dispersion lead to enhanced detection sensitivity compared to the theoretically predicted one based only on the plasma on and off phenomena. We show that lower power of the incident electromagnetic wave is sufficient for plasma breakdown in atmospheric-pressure air and the elimination of the statistical distribution is possible in the presence of radioactive material. PMID:28486438

Mechanisms of high-gradient microwave breakdown on metal surfaces in high power microwave source

NASA Astrophysics Data System (ADS)

Xie, Jialing; Chen, Changhua; Chang, Chao; Wu, Cheng; Huo, Yankun

2017-12-01

A breakdown cavity was designed to study the high-gradient microwave breakdown on a metal surface. The breakdown cavity can be distinguished into an electron emission boundary and a bombardment boundary as there is an evident difference in amplitude of the electric field between the two planes in the cavity. Breakdown tracks on the cavity were studied with an electron scanning microscope. The tracks on the electron emission boundary with the higher electric field were eroded; a component analysis indicates that these tracks contain an emission boundary material. On the bombardment boundary with a lower electric field, two kinds of tracks exist: an erosion track containing a bombardment boundary material and a sputtered track containing an emission boundary material. From these tracks, the mechanisms of high-gradient microwave breakdown on a metal surface have been analyzed.

Low Gain Avalanche Detectors (LGAD) for particle physics and synchrotron applications

NASA Astrophysics Data System (ADS)

Moffat, N.; Bates, R.; Bullough, M.; Flores, L.; Maneuski, D.; Simon, L.; Tartoni, N.; Doherty, F.; Ashby, J.

2018-03-01

A new avalanche silicon detector concept is introduced with a low gain in the region of ten, known as a Low Gain Avalanche Detector, LGAD. The detector's characteristics are simulated via a full process simulation to obtain the required doping profiles which demonstrate the desired operational characteristics of high breakdown voltage (500 V) and a gain of 10 at 200 V reverse bias for X-ray detection. The first low gain avalanche detectors fabricated by Micron Semiconductor Ltd are presented. The doping profiles of the multiplication junctions were measured with SIMS and reproduced by simulating the full fabrication process which enabled further development of the manufacturing process. The detectors are 300 μm thick p-type silicon with a resistivity of 8.5 kΩcm, which fully depletes at 116 V. The current characteristics are presented and demonstrate breakdown voltages in excess of 500 V and a current density of 40 to 100 nAcm‑2 before breakdown measured at 20oC. The gain of the LGAD has been measured with a red laser (660 nm) and shown to be between 9 and 12 for an external bias voltage range from 150 V to 300 V.

Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure

PubMed Central

Li, Chien-Yu; Cheng, Min-Yu; Houng, Mau-Phon; Yang, Cheng-Fu; Liu, Jing

2018-01-01

In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H2 plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the AlxOx guard ring structure deposited by the atomic layer deposition (ALD) at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the AlxOx guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V), a low reverse leakage current density (≤72 μA/mm2@100 V), and a Schottky barrier height of 1.074 eV. PMID:29316726

Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure.

PubMed

Li, Chien-Yu; Cheng, Min-Yu; Houng, Mau-Phon; Yang, Cheng-Fu; Liu, Jing

2018-01-08

In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and Al x O x guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H₂ plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the Al x O x guard ring structure deposited by the atomic layer deposition (ALD) at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the Al x O x guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V), a low reverse leakage current density (≤72 μA/mm²@100 V), and a Schottky barrier height of 1.074 eV.

Comparative study of CAVET with dielectric and p-GaN gate and Mg ion-implanted current blocking layer

NASA Astrophysics Data System (ADS)

Mandal, Saptarshi; Agarwal, Anchal; Ahmadi, Elaheh; Mahadeva Bhat, K.; Laurent, Matthew A.; Keller, Stacia; Chowdhury, Srabanti

2017-08-01

In this work, a study of two different types of current aperture vertical electron transistor (CAVET) with ion-implanted blocking layer are presented. The device fabrication and performance limitation of a CAVET with a dielectric gate is discussed, and the breakdown limiting structure is evaluated using on-wafer test structures. The gate dielectric limited the device breakdown to 50V, while the blocking layer was able to withstand over 400V. To improve the device performance, an alternative CAVET structure with a p-GaN gate instead of dielectric is designed and realized. The pGaN gated CAVET structure increased the breakdown voltage to over 400V. Measurement of test structures on the wafer showed the breakdown was limited by the blocking layer instead of the gate p-n junction.

Characterization of ultrathin insulators in CMOS technology: Wearout and failure mechanisms due to processing and operation

NASA Astrophysics Data System (ADS)

Okandan, Murat

In the CMOS technology the gate dielectric is the most critical layer, as its condition directly dictates the ultimate performance of the devices. In this thesis, the wear-out and failure mechanisms in ultra-thin (around 50A and lower) oxides are investigated. A new degradation phenomenon, quasi-breakdown (or soft-breakdown), and the annealing and stressing behavior of devices after quasi-breakdown are considered in detail. Devices that are in quasi-breakdown continue to operate as switches, but the gate leakage current is two orders of magnitude higher than the leakage in healthy devices and the stressing/annealing behavior of the devices are completely altered. This phenomenon is of utmost interest, since the reduction in SiO2 dielectric thickness has reached its physical limits, and the quasi-breakdown behavior is seen to dominate as a failure mode in this regime. The quasi-breakdown condition can be brought on by stresses during operation or processing. To further study this evolution through stresses and anneals, cyclic current-voltage (I-V) measurement has been further developed and utilized in this thesis. Cyclic IV is a simple and fast, two terminal measurement technique that looks at the transient current flowing in an MOS system during voltage sweeps from accumulation to inversion and back. During these sweeps, carrier trapping/detrapping, generation and recombination are observed. An experimental setup using a fast electrometer and analog to digital conversion (A/D) card and the software for control of the setup and data analysis were also developed to gain further insight into the detailed physics involved. Overall, the crucial aspects of wear-out and quasi-breakdown of ultrathin dielectrics, along with the methods for analyzing this evolution are presented in this thesis.

Study of high breakdown voltage GaN-based current-aperture vertical electron transistor with source-connected field-plates for power applications

NASA Astrophysics Data System (ADS)

Wang, Haiyong; Mao, Wei; Cong, Guanyu; Wang, Xiaofei; Du, Ming; Zheng, Xuefeng; Wang, Chong; Zhang, Jincheng; Hao, Yue

2018-07-01

A GaN-based current-aperture vertical electron transistor with source-connected field-plates (SFP-CAVET) is proposed and investigated by means of two-dimensional simulations. This device is characterized by the source-connected field-plates (SFP) at both sides, which leads to remarkable improvement of breakdown voltage (BV) without degradation of specific on-resistance (R on). Systematic analyses are conducted to reveal the mechanism of the SFP modulation effect on the potential and the electric field distributions and thus the BV improvement. Optimization and design of SFP-CAVET are performed for the maximum BV. Simulation results exhibit a R on of 2.25 mΩ · cm2 and a significantly enhanced BV of 3610 V in SFP-CAVET, indicating an average breakdown electric field of more than 240 V μm‑1. Compared with conventional CAVET, both BV and average breakdown electric field in SFP-CAVET are increased by more than 121% while R on remains unchanged. And the trade-off performance of BV and R on in SFP-CAVET is also better than that in GaN-based CAVET with superjunctions (SJ CAVET). In addition, the fabrication process issues of the proposed SFP-CAVET are also presented and discussed. These results could break a new path to further improve the trade-off performance of BV and R on in GaN-based vertical devices.

Experimental study of the processes accompanying argon breakdown in a long discharge tube at a reduced pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meshchanov, A. V.; Ionikh, Yu. Z., E-mail: y.ionikh@spbu.ru; Shishpanov, A. I.

Results are presented from experimental studies of the breakdown stage of a low-pressure discharge (1 and 5 Torr) in a glass tube the length of which (75 cm) is much larger than its diameter (2.8 cm). Breakdowns occurred under the action of positive voltage pulses with an amplitude of up to 9.4 kV and a characteristic rise time of 2–50 μs. The discharge current in the steady-state mode was 10–120 mA. The electrode voltage, discharge current, and radiation from the discharge gap were detected simultaneously. The dynamic breakdown voltage was measured, the prebreakdown ionization wave was recorded, and its velocitymore » was determined. The dependence of the discharge parameters on the time interval between voltage pulses (the socalled “memory effect”) was analyzed. The memory effect manifests itself in a decrease or an increase in the breakdown voltage and a substantial decrease in its statistical scatter. The time interval between pulses in this case can reach 0.5 s. The effect of illumination of the discharge tube with a light source on the breakdown was studied. It is found that the irradiation of the anode region of the tube by radiation with wavelengths of ≤500 nm substantially reduces the dynamic breakdown voltage. Qualitative explanations of the obtained results are offered.« less

Statistics of vacuum breakdown in the high-gradient and low-rate regime

NASA Astrophysics Data System (ADS)

Wuensch, Walter; Degiovanni, Alberto; Calatroni, Sergio; Korsbäck, Anders; Djurabekova, Flyura; Rajamäki, Robin; Giner-Navarro, Jorge

2017-01-01

In an increasing number of high-gradient linear accelerator applications, accelerating structures must operate with both high surface electric fields and low breakdown rates. Understanding the statistical properties of breakdown occurrence in such a regime is of practical importance for optimizing accelerator conditioning and operation algorithms, as well as of interest for efforts to understand the physical processes which underlie the breakdown phenomenon. Experimental data of breakdown has been collected in two distinct high-gradient experimental set-ups: A prototype linear accelerating structure operated in the Compact Linear Collider Xbox 12 GHz test stands, and a parallel plate electrode system operated with pulsed DC in the kV range. Collected data is presented, analyzed and compared. The two systems show similar, distinctive, two-part distributions of number of pulses between breakdowns, with each part corresponding to a specific, constant event rate. The correlation between distance and number of pulses between breakdown indicates that the two parts of the distribution, and their corresponding event rates, represent independent primary and induced follow-up breakdowns. The similarity of results from pulsed DC to 12 GHz rf indicates a similar vacuum arc triggering mechanism over the range of conditions covered by the experiments.

Experimental Study of Magnetic Field Production and Dielectric Breakdown of Auto-Magnetizing Liners

NASA Astrophysics Data System (ADS)

Shipley, Gabriel; Awe, Thomas; Hutchinson, Trevor; Hutsel, Brian; Slutz, Stephen; Lamppa, Derek

2017-10-01

AutoMag liners premagnetize the fuel in MagLIF targets and provide enhanced x-ray diagnostic access and increased current delivery without requiring external field coils. AutoMag liners are composite liners made with discrete metallic helical conduction paths separated by insulating material. First, a low dI/dt ``foot'' current pulse (1 MA in 100 ns) premagnetizes the fuel. Next, a higher dI/dt pulse with larger induced electric field initiates breakdown on the composite liner's; surface, switching the current from helical to axial to implode the liner. Experiments on MYKONOS have tested the premagnetization and breakdown phases of AutoMag and demonstrate axial magnetic fields above 90 Tesla for a 550 kA peak current pulse. Electric fields of 17 MV/m have been generated before breakdown. AutoMag may enhance MagLIF performance by increasing the premagnetization strength significantly above 30 T, thus reducing thermal-conduction losses and mitigating anomalous diffusion of magnetic field out of hotter fuel regions, by, for example, the Nernst thermoelectric effect. This project was funded in part by Sandia's Laboratory Directed Research and Development Program (Projects No. 200169 and 195306).

Experiments with high-voltage insulators in the presence of tritium

NASA Astrophysics Data System (ADS)

Grisham, L. R.; Falter, H.; Causey, R.; Chrisman, W.; Stevenson, T.; Wright, K.

1991-02-01

During the final deuterium-tritium phases of the TFTR and JET tokamaks half of the neutral injectors will be used to produce tritium neutral beams to maintain an equal mix of deuterium and tritium in the core plasma, and such requirements may also occur in future devices. This will require that the voltage hold off capabilities of the high voltage insulators in the accelerators be unimpaired by any charge buildups associated with the beta decay of adsorbed layers. We report tests in which we measured the drain currents under high dc voltage of TFTR and JET accelerator insulators while they were successively exposed to vacuum, deuterium and tritium. There did not appear to be any substantial reduction in hold-off capability with tritium, although at some voltages there was a small increase in the leakage current. We also compared the breakdown properties of a plastic tubing filled with deuterium and then tritium at varying pressures, since such tubing has been considered as a high-voltage break in the gas feed system for TFTR, and the presence of large numbers of electron-ion pairs might lead to enhanced Paschen breakdown. We found no significant differences in the behavior for the geometry used.

16 CFR 1204.4 - Electric shock protection tests.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 16 Commercial Practices 2 2014-01-01 2014-01-01 false Electric shock protection tests. 1204.4... Electric shock protection tests. (a) Safety precautions. For tests involving high voltage, the following... Effectiveness Test or the Antenna-Mast System Test if no electrical breakdown occurs and if no current reading...

16 CFR 1204.4 - Electric shock protection tests.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 16 Commercial Practices 2 2011-01-01 2011-01-01 false Electric shock protection tests. 1204.4... Electric shock protection tests. (a) Safety precautions. For tests involving high voltage, the following... Effectiveness Test or the Antenna-Mast System Test if no electrical breakdown occurs and if no current reading...

16 CFR 1204.4 - Electric shock protection tests.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 16 Commercial Practices 2 2012-01-01 2012-01-01 false Electric shock protection tests. 1204.4... Electric shock protection tests. (a) Safety precautions. For tests involving high voltage, the following... Effectiveness Test or the Antenna-Mast System Test if no electrical breakdown occurs and if no current reading...

Inductively generated streaming plasma ion source

DOEpatents

Glidden, Steven C.; Sanders, Howard D.; Greenly, John B.

2006-07-25

A novel pulsed, neutralized ion beam source is provided. The source uses pulsed inductive breakdown of neutral gas, and magnetic acceleration and control of the resulting plasma, to form a beam. The beam supplies ions for applications requiring excellent control of ion species, low remittance, high current density, and spatial uniformity.

Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates

NASA Astrophysics Data System (ADS)

Su, Jie; Posthuma, Niels; Wellekens, Dirk; Saripalli, Yoga N.; Decoutere, Stefaan; Arif, Ronald; Papasouliotis, George D.

2016-12-01

We are reporting the growth of AlGaN based enhancement-mode high electron mobility transistors (HEMTs) on 200 mm silicon (111) substrates using a single wafer metalorganic chemical vapor deposition reactor. It is found that TMAl pre-dosing conditions are critical in controlling the structural quality, surface morphology, and wafer bow of the HEMT stack. Optimal structural quality and pit-free surface are demonstrated for AlGaN HEMTs with pre-dosing temperature at 750°C. Intrinsically, carbon-doped AlGaN, is used as the current blocking layer in the HEMT structures. The lateral buffer breakdown and device breakdown characteristics, reach 400 V at a leakage current of 1 μA/mm measured at 150°C. The fabricated HEMT devices, with a Mg doped p-GaN gate layer, are operating in enhancement mode reaching a positive threshold voltage of 2-2.5 V, a low on-resistance of 10.5 Ω mm with a high drain saturation current of 0.35 A/mm, and a low forward bias gate leakage current of 0.5 × 10-6 A/mm ( V gs = 7 V). Tight distribution of device parameters across the 200 mm wafers and over repeat process runs is observed.

Time-Domain Finite Element Analysis of Nonlinear Breakdown Problems in High-Power-Microwave Devices and Systems

DTIC Science & Technology

2015-12-24

simulation of the electromagnetic- plasma interaction and the high-power microwave breakdown in air. Under the high pressure and high frequency condition of...the high-power air breakdown, the physical phenomenon is described using a nonlinearly coupled full-wave Maxwell and fluid plasma system. This...Challenges ........................................................................... 3 3.1.1 Plasma Fluid Model

Shock induced phase transitions and current generation in ferroelectric ceramics

NASA Astrophysics Data System (ADS)

Agrawal, Vinamra; Bhattacharya, Kaushik

2017-06-01

Ferroelectric materials are used as ferroelectric generators to obtain pulsed power by subjecting them to a shock loading. The impact induces a phase transition and at high impact speeds, dielectric breakdown. Depending on the loading conditions and the electromechanical boundary conditions, the current or voltage profiles obtained vary. We explore the phenomenon of large deformation dynamic behavior and the associated electro-thermo-mechanical coupling of ferroelectric materials in adiabatic environments. Using conservation laws, Maxwell's equations and second law of thermodynamics, we obtain a set of governing equations for the material and the driving force acting on the propagating phase boundary. We also account for the possibility of surface charges on the phase boundary in case of dielectric breakdown which introduces contribution of curvature of the phase boundary in the equations. Next, the governing equations are used to solve a plate impact problem. The Helmholtz energy of the material is chosen be a combination of piecewise quadratic potential in polarization and thermo-elastic material capable of undergoing phase transformation. We obtain current profiles for short circuit boundary conditions along with strain, particle velocity and temperature maps. US AFOSR through Center of Excellence in High Rate Deformation of Heterogeneous Materials FA 9550-12-1-0091.

Structural evolution of nanoporous ultra-low k dielectrics under voltage stress

NASA Astrophysics Data System (ADS)

Raja, Archana; Shaw, Thomas; Grill, Alfred; Laibowitz, Robert; Heinz, Tony

2013-03-01

High speed interconnects in advanced integrated circuits require ultra-low-k dielectrics. Reduction of the dielectric constant is achieved via incorporation of nanopores in structures containing silicon, carbon, oxygen and hydrogen (SiCOH). We study nanoporous SiCOH films of k=2.5 and thicknesses of 40 - 400 nm. Leakage currents develop in the films under long-term voltage stress, eventually leading to breakdown and chip failure. Previous work* has shown the build-up of trap states as dielectric breakdown progresses. Using FTIR spectroscopy we have tracked the reorganization of the bonds in the SiCOH networks induced by voltage stress. Our results indicate that the cleavage of the Si-C and SiC-O bonds contribute toward increase in the density of bulk trapping states as breakdown is approached. AC conductance and capacitance measurements have also been carried out to describe interfacial and bulk traps and mechanisms. Comparison of breakdown properties of films with differing carbon content will also be presented to further delineate the role of carbon. *Atkin, J.M.; Shaw, T.M.; Liniger, E.; Laibowitz, R.B.; Heinz, T.F. Reliability Physics Symposium (IRPS), 2012 IEEE International Supported by the Semiconductor Research Corporation

Comparing 2 Adhesive Methods on Skin Integrity in the High-Risk Neonate.

PubMed

Boswell, Nicole; Waker, Cheryl L

2016-12-01

Nurses have a primary role in promoting neonatal skin integrity and skin care management of the critically ill neonate. Adhesive products are essential to secure needed medical devices but can be a significant factor contributing to skin breakdown. Current literature does not offer a definitive answer regarding which products most safely and effectively work to secure needed devices in the high-risk neonatal population. To determine which adhesive method is best practice to safely and effectively secure lines/tubes in the high-risk neonate population. The only main effect that was significant was age group with mean skin scores. Subjects in the younger group (24-28 weeks) had higher skin scores than in the older group (28-34 weeks), validating that younger gestations are at higher risk of breakdown with the use of adhesives. The findings did not clearly identify which product was superior to secure tubes and lines, or was the least injurious to skin of the high-risk neonate. Neither a transparent dressing only or transparent dressing over hydrocolloid method clearly demonstrated an advantage in the high-risk, preterm neonate. Anecdotal comments suggested staff preferred the transparent dressing over hydrocolloid method as providing better adhesive while protecting skin integrity. The findings validated that younger gestations are at higher risk of breakdown with the use of adhesives and therefore require close vigilance to maintain skin integrity.

Current-limiting challenges for all-spin logic devices

PubMed Central

Su, Li; Zhang, Youguang; Klein, Jacques-Olivier; Zhang, Yue; Bournel, Arnaud; Fert, Albert; Zhao, Weisheng

2015-01-01

All-spin logic device (ASLD) has attracted increasing interests as one of the most promising post-CMOS device candidates, thanks to its low power, non-volatility and logic-in-memory structure. Here we investigate the key current-limiting factors and develop a physics-based model of ASLD through nano-magnet switching, the spin transport properties and the breakdown characteristic of channel. First, ASLD with perpendicular magnetic anisotropy (PMA) nano-magnet is proposed to reduce the critical current (Ic0). Most important, the spin transport efficiency can be enhanced by analyzing the device structure, dimension, contact resistance as well as material parameters. Furthermore, breakdown current density (JBR) of spin channel is studied for the upper current limitation. As a result, we can deduce current-limiting conditions and estimate energy dissipation. Based on the model, we demonstrate ASLD with different structures and channel materials (graphene and copper). Asymmetric structure is found to be the optimal option for current limitations. Copper channel outperforms graphene in term of energy but seriously suffers from breakdown current limit. By exploring the current limit and performance tradeoffs, the optimization of ASLD is also discussed. This benchmarking model of ASLD opens up new prospects for design and implementation of future spintronics applications. PMID:26449410

A Unified Model of Cloud-to-Ground Lightning Stroke

NASA Astrophysics Data System (ADS)

Nag, A.; Rakov, V. A.

2014-12-01

The first stroke in a cloud-to-ground lightning discharge is thought to follow (or be initiated by) the preliminary breakdown process which often produces a train of relatively large microsecond-scale electric field pulses. This process is poorly understood and rarely modeled. Each lightning stroke is composed of a downward leader process and an upward return-stroke process, which are usually modeled separately. We present a unified engineering model for computing the electric field produced by a sequence of preliminary breakdown, stepped leader, and return stroke processes, serving to transport negative charge to ground. We assume that a negatively-charged channel extends downward in a stepped fashion through the relatively-high-field region between the main negative and lower positive charge centers and then through the relatively-low-field region below the lower positive charge center. A relatively-high-field region is also assumed to exist near ground. The preliminary breakdown pulse train is assumed to be generated when the negatively-charged channel interacts with the lower positive charge region. At each step, an equivalent current source is activated at the lower extremity of the channel, resulting in a step current wave that propagates upward along the channel. The leader deposits net negative charge onto the channel. Once the stepped leader attaches to ground (upward connecting leader is presently neglected), an upward-propagating return stroke is initiated, which neutralizes the charge deposited by the leader along the channel. We examine the effect of various model parameters, such as step length and current propagation speed, on model-predicted electric fields. We also compare the computed fields with pertinent measurements available in the literature.

Note: Measuring breakdown characteristics during the hot re-ignition of high intensity discharge lamps using high frequency alternating current voltage.

PubMed

van den Bos, R A J M; Sobota, A; Manders, F; Kroesen, G M W

2013-04-01

To investigate the cold and hot re-ignition properties of High Intensity Discharge (HID) lamps in more detail an automated setup was designed in such a way that HID lamps of various sizes and under different background pressures can be tested. The HID lamps are ignited with a ramped sinusoidal voltage signal with frequencies between 60 and 220 kHz and with amplitude up to 7.5 kV. Some initial results of voltage and current measurements on a commercially available HID lamp during hot and cold re-ignition are presented.

Charging and breakdown in amorphous dielectrics: Phenomenological modeling approach and applications

NASA Astrophysics Data System (ADS)

Palit, Sambit

Amorphous dielectrics of different thicknesses (nm to mm) are used in various applications. Low temperature processing/deposition of amorphous thin-film dielectrics often result in defect-states or electronic traps. These traps are responsible for increased leakage currents and bulk charge trapping in many associated applications. Additional defects may be generated during regular usage, leading to electrical breakdown. Increased leakage currents, charge trapping and defect generation/breakdown are important and pervasive reliability concerns in amorphous dielectrics. We first explore the issue of charge accumulation and leakage in amorphous dielectrics. Historically, charge transport in amorphous dielectrics has been presumed, depending on the dielectric thickness, to be either bulk dominated (Frenkel-Poole (FP) emission) or contact dominated (Fowler-Nordheim tunneling). We develop a comprehensive dielectric charging modeling framework which solves for the transient and steady state charge accumulation and leakage currents in an amorphous dielectric, and show that for intermediate thickness dielectrics, the conventional assumption of FP dominated current transport is incorrect, and may lead to false extraction of dielectric parameters. We propose an improved dielectric characterization methodology based on an analytical approximation of our model. Coupled with ab-initio computed defect levels, the dielectric charging model explains measured leakage currents more accurately with lesser empiricism. We study RF-MEMS capacitive switches as one of the target applications of intermediate thickness amorphous dielectrics. To achieve faster analysis and design of RF-MEMS switches in particular, and electro-mechanical actuators in general, we propose a set of fundamental scaling relationships which are independent of specific physical dimensions and material properties; the scaling relationships provide an intrinsic classification of all electro-mechanical actuators. However, RF-MEMS capacitive switches are plagued by the reliability issue of temporal shifts of actuation voltages due to dielectric charge accumulation, often resulting in failure due to membrane stiction. Using the dielectric charging model, we show that in spite of unpredictable roughness of deposited dielectrics, there are predictable shifts in actuation voltages due to dielectric charging in RF-MEMS switches. We also propose a novel non-obtrusive, non-contact, fully electronic resonance based technique to characterize charging driven actuation shifts in RF-MEMS switches which overcomes limitations in conventionally used methods. Finally, we look into the issue of defect generation and breakdown in thick polymer dielectrics. Polymer materials often face premature electrical breakdown due to high electric fields and frequencies, and exposure to ambient humidity conditions. Using a field-driven correlated defect generation model, coupled with a model for temperature rise due to dielectric heating at AC stresses, we explain measured trends in time-to-breakdown and breakdown electric fields in polymer materials. Using dielectric heating we are able to explain the observed lifetime and dielectric strength reduction with increasing dielectric thicknesses. Performing lifetime measurements after exposure to controlled humidity conditions, we find that moisture ingress into a polymer material reduces activation barriers for chain breakage and increases dielectric heating. Overall, this thesis develops a comprehensive framework of dielectric charging, leakage and degradation of insulators of different thicknesses that have broad applications in multiple technologies.

Development of high temperature gallium phosphide rectifiers

NASA Technical Reports Server (NTRS)

Craford, M. G.; Keune, D. L.

1972-01-01

Large area high performance, GaP rectifiers were fabricated by means of Zn diffusion into vapor phase epitaxial GaP. Devices with an active area of 0.01 sq cm typically exhibit forward voltages of 3 volts for a bias current of 1 ampere and have reverse breakdown voltages of 300 volts for temperatures from 27 C to 400 C. Typical device reverse saturation current at a reverse bias of 150 volts is less than 10 to the minus 9th power amp at 27 C and less than 0.000050 amp at 400 C.

Unstable behaviour of normally-off GaN E-HEMT under short-circuit

NASA Astrophysics Data System (ADS)

Martínez, P. J.; Maset, E.; Sanchis-Kilders, E.; Esteve, V.; Jordán, J.; Bta Ejea, J.; Ferreres, A.

2018-04-01

The short-circuit capability of power switching devices plays an important role in fault detection and the protection of power circuits. In this work, an experimental study on the short-circuit (SC) capability of commercial 600 V Gallium Nitride enhancement-mode high-electron-mobility transistors (E-HEMT) is presented. A different failure mechanism has been identified for commercial p-doped GaN gate (p-GaN) HEMT and metal-insulator-semiconductor (MIS) HEMT. In addition to the well known thermal breakdown, a premature breakdown is shown on both GaN HEMTs, triggered by hot electron trapping at the surface, which demonstrates that current commercial GaN HEMTs has requirements for improving their SC ruggedness.

Leaf litter breakdown, microbial respiration and shredder production in metal-polluted streams

USGS Publications Warehouse

Carlisle, D.M.; Clements, W.H.

2005-01-01

1. If species disproportionately influence ecosystem functioning and also differ in their sensitivities to environmental conditions, the selective removal of species by anthropogenic stressors may lead to strong effects on ecosystem processes. We evaluated whether these circumstances held for several Colorado, U.S.A. streams stressed by Zn. 2. Benthic invertebrates and chemistry were sampled in five second-third order streams for 1 year. Study streams differed in dissolved metal concentrations, but were otherwise similar in chemical and physical characteristics. Secondary production of leaf-shredding insects was estimated using the increment summation and size-frequency methods. Leaf litter breakdown rates were estimated by retrieving litter-bags over a 171 day period. Microbial activity on leaf litter was measured in the laboratory using changes in oxygen concentration over a 48 h incubation period. 3. Dissolved Zn concentrations varied eightfold among two reference and three polluted streams. Total secondary production of shredders was negatively associated with metal contamination. Secondary production in reference streams was dominated by Taenionema pallidum. Results of previous studies and the current investigation demonstrate that this shredder is highly sensitive to metals in Colorado headwater streams. Leaf litter breakdown rates were similar between reference streams and declined significantly in the polluted streams. Microbial respiration at the most contaminated site was significantly lower than at reference sites. 4. Our results supported the hypothesis that some shredder species contribute disproportionately to leaf litter breakdown. Furthermore, the functionally dominant taxon was also the most sensitive to metal contamination. We conclude that leaf litter breakdown in our study streams lacked functional redundancy and was therefore highly sensitive to contaminant-induced alterations in community structure. We argue for the necessity of simultaneously measuring community structure and ecosystem function in anthropogenically stressed ecosystems.

Evidence of Magnetic Breakdown on the Defects With Thermally Suppressed Critical Field in High Gradient SRF Cavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eremeev, Grigory; Palczewski, Ari

2013-09-01

At SRF 2011 we presented the study of quenches in high gradient SRF cavities with dual mode excitation technique. The data differed from measurements done in 80's that indicated thermal breakdown nature of quenches in SRF cavities. In this contribution we present analysis of the data that indicates that our recent data for high gradient quenches is consistent with the magnetic breakdown on the defects with thermally suppressed critical field. From the parametric fits derived within the model we estimate the critical breakdown fields.

Electric breakdowns of the "plasma capacitors" occurs on insulation coating of the ISS surface

NASA Astrophysics Data System (ADS)

Homin, Taras; Korsun, Anatolii

High electric fields and currents are occurred in the spacecrafts plasma environment by onboard electric generators. Thus the high voltage solar array (SA) of the American segment of International Space Station (ISS) generates potential 160 V. Its negative pole is shorted to the frames of all the ISS segments. There is electric current between the SA and the frame through the plasma environment, i.e. electric discharge occurs. As a result a potential drop exists between the frames of all the ISS segments and the environmental plasma [1], which is cathode drop potential varphi _{c} defined. When ISS orbiting, the φc varies greatly in the range 0-100 V. A large area of the ISS frames and SA surface is coated with a thin dielectric film. Because of cathode drop potential the frame surfaces accumulate ion charges and the SA surfaces accumulate electron charges. These surfaces become plasma capacitors, which accumulate much charge and energy. Micrometeorite impacts or buildup of potential drop in excess of breakdown threshold varphi_{b} (varphi _{c} > varphi _{b} = 60 V) may cause breakdowns of these capacitors. Following a breakdown, the charge collected at the surfaces disperses and transforms into a layer of dense plasma [2]. This plasma environment of the spacecraft produces great pulsed electric fields E at the frame surfaces as well as heavy currents between construction elements which in turn induce great magnetic fields H. Therefore the conductive frame and the environmental plasma is plasma inductors. We have calculated that the densities of these pulsing and high-frequency fields E and H generated in the plasma environment of the spacecraft may exceed values hazardous to human. Besides, these fields must induce large electromagnetic impulses in the space-suit and in the power supply and control circuits of onboard systems. During astronaut’s space-suit activity, these fields will penetrate the space-suit and the human body with possible hazardous effects. These effects need to be studied, and appropriate remedies are to be developed. References 1. Mikatarian, R., et al., «Electrical Charging of the International Space Station», AIAA Paper No. 2003-1079, 41th. Aerospace Sciences Meeting and Exhibit, January 2003. 2. A.G. Korsun, «Electric discharge processes intensification mechanisms on International Space Station surface». Astronautics and rocket production, 1, 2011 (in Russian).

16 CFR § 1204.4 - Electric shock protection tests.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 16 Commercial Practices 2 2013-01-01 2013-01-01 false Electric shock protection tests. § 1204.4... Electric shock protection tests. (a) Safety precautions. For tests involving high voltage, the following... Effectiveness Test or the Antenna-Mast System Test if no electrical breakdown occurs and if no current reading...

Least Squares Shadowing Sensitivity Analysis of Chaotic Flow Around a Two-Dimensional Airfoil

NASA Technical Reports Server (NTRS)

Blonigan, Patrick J.; Wang, Qiqi; Nielsen, Eric J.; Diskin, Boris

2016-01-01

Gradient-based sensitivity analysis has proven to be an enabling technology for many applications, including design of aerospace vehicles. However, conventional sensitivity analysis methods break down when applied to long-time averages of chaotic systems. This breakdown is a serious limitation because many aerospace applications involve physical phenomena that exhibit chaotic dynamics, most notably high-resolution large-eddy and direct numerical simulations of turbulent aerodynamic flows. A recently proposed methodology, Least Squares Shadowing (LSS), avoids this breakdown and advances the state of the art in sensitivity analysis for chaotic flows. The first application of LSS to a chaotic flow simulated with a large-scale computational fluid dynamics solver is presented. The LSS sensitivity computed for this chaotic flow is verified and shown to be accurate, but the computational cost of the current LSS implementation is high.

Time-resolved imaging of the plasma development in a triggered vacuum switch

NASA Astrophysics Data System (ADS)

Park, Wung-Hoa; Kim, Moo-Sang; Son, Yoon-Kyoo; Frank, Klaus; Lee, Byung-Joon; Ackerman, Thilo; Iberler, Marcus

2017-12-01

Triggered vacuum switches (TVS) are particularly used in pulsed power technology as closing switches for high voltages and high charge transfer. A non-sealed-off prototype was designed with a side-on quartz window to investigate the evolution of the trigger discharge into the main discharge. The image acquisition was done with a fast CCD camera PI-MAX2 from Princeton Instruments. The CCD camera has a maximum exposure time of 2 ns. The electrode configuration of the prototype is a conventional six-rod gap type, a capacitor bank with C = 16.63 μF, which corresponds at 20 kV charging voltage to a total stored charge of 0.3 C or a total energy of 3.3 kJ. The peak current is 88 kA. According to the tremendously highly different light intensities during the trigger and main discharge, the complete discharge is split into three phases: a trigger breakdown phase, an intermediate phase and a main discharge phase. The CCD camera images of the first phase show instabilities of the trigger breakdown, in phase 2 three different discharge modes are observed. After the first current maximum the discharge behavior is reproducible.

Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

NASA Astrophysics Data System (ADS)

Xiao-Wen, Xi; Chang-Chun, Chai; Gang, Zhao; Yin-Tang, Yang; Xin-Hai, Yu; Yang, Liu

2016-04-01

The damage effect and mechanism of the electromagnetic pulse (EMP) on the GaAs pseudomorphic high electron mobility transistor (PHEMT) are investigated in this paper. By using the device simulation software, the distributions and variations of the electric field, the current density and the temperature are analyzed. The simulation results show that there are three physical effects, i.e., the forward-biased effect of the gate Schottky junction, the avalanche breakdown, and the thermal breakdown of the barrier layer, which influence the device current in the damage process. It is found that the damage position of the device changes with the amplitude of the step voltage pulse. The damage appears under the gate near the drain when the amplitude of the pulse is low, and it also occurs under the gate near the source when the amplitude is sufficiently high, which is consistent with the experimental results. Project supported by the National Basic Research Program of China (Grant No. 2014CB339900), and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (CAEP) (Grant No. 2015-0214.XY.K).

Analysis techniques of charging damage studied on three different high-current ion implanters

NASA Astrophysics Data System (ADS)

Felch, S. B.; Larson, L. A.; Current, M. I.; Lindsey, D. W.

1989-02-01

One of the Greater Silicon Valley Implant Users' Group's recent activities has been to sponsor a round-robin on charging damage, where identical wafers were implanted on three different state-of-the-art, high-current ion implanters. The devices studied were thin-dielectric (250 Å SiO2), polysilicon-gate MOS capacitors isolated by thick field oxide. The three implanters involved were the Varian/Extrion 160XP, the Eaton/Nova 10-80, and the Applied Materials PI9000. Each implanter vendor was given 48 wafers to implant with 100 keV As+ ions at a dose of 1 × 1016 cm-2. Parameters that were varied include the beam current, electron flood gun current, and chamber pressure. The charge-to-breakdown, breakdown voltage, and leakage current of several devices before anneal have been measured. The results from these tests were inconclusive as to the physical mechanism of charging and as to the effectiveness of techniques to reduce its impact on devices. However, the methodology of this study is discussed in detail to aid in the planning of future experiments. Authors' industrial affiliations: S.B. Felch, Varian Research Center, 611 Hansen Way, Palo Alto, CA 94303, USA; L.A. Larson, National Semiconductor Corp., P.O. Box 58090, Santa Clara, CA 95052-8090, USA; M.I. Current, Applied Materials, 3050 Bowers Ave., Santa Clara, CA 95054, USA; D.W. Lindsey, Eaton/NOVA, 931 Benicia Ave, Sunnyvale, CA 94086, USA.

Experimental and analytical study of the DC breakdown characteristics of polypropylene laminated paper with a butt gap condition considering the insulation design of superconducting cable

NASA Astrophysics Data System (ADS)

Seo, In-jin; Choi, Won; Seong, Jae-gyu; Lee, Bang-wook; Koo, Ja-yoon

2014-08-01

It has been reported that the insulation design under DC stress is considered as one of the critical factors in determining the performance of high-voltage direct current (HVDC) superconducting cable. Therefore, it is fundamentally necessary to investigate the DC breakdown characteristics of the composite insulation system consisting of liquid nitrogen (LN2)/polypropylene-laminated-paper (PPLP). In particular, the insulation characteristics under DC polarity reversal condition should be verified to understand the polarity effect of the DC voltage considering the unexpected incidents taking place at line-commutated-converters (LCC) under service at a DC power grid. In this study, to examine the variation of DC electric field strength, the step voltage and polarity reversal breakdown tests are performed under DC stress. Also, we investigate the electric field distributions in a butt gap of the LN2/PPLP condition considering the DC polarity reversal by using simulation software.

Nanopore fabricated in pyramidal HfO2 film by dielectric breakdown method

NASA Astrophysics Data System (ADS)

Wang, Yifan; Chen, Qi; Deng, Tao; Liu, Zewen

2017-10-01

The dielectric breakdown method provides an innovative solution to fabricate solid-state nanopores on insulating films. A nanopore generation event via this method is considered to be caused by random charged traps (i.e., structural defects) and high electric fields in the membrane. Thus, the position and number of nanopores on planar films prepared by the dielectric breakdown method is hard to control. In this paper, we propose to fabricate nanopores on pyramidal HfO2 films (10-nm and 15-nm-thick) to improve the ability to control the location and number during the fabrication process. Since the electric field intensity gets enhanced at the corners of the pyramid-shaped film, the probability of nanopore occurrence at vertex and edge areas increases. This priority of appearance provides us chance to control the location and number of nanopores by monitoring a sudden irreversible discrete increase in current. The experimental results showed that the probability of nanopore occurrence decreases in an order from the vertex area, the edge area to the side face area. The sizes of nanopores ranging from 30 nm to 10 nm were obtained. Nanopores fabricated on the pyramid-shaped HfO2 film also showed an obvious ion current rectification characteristic, which might improve the nanopore performance as a biomolecule sequencing platform.

New phenomenology of gas breakdown in DC and RF fields

NASA Astrophysics Data System (ADS)

Petrović, Zoran Lj; Sivoš, Jelena; Savić, Marija; Škoro, Nikola; Radmilović Radenović, Marija; Malović, Gordana; Gocić, Saša; Marić, Dragana

2014-05-01

This paper follows a review lecture on the new developments in the field of gas breakdown and low current discharges, usually covered by a form of Townsend's theory and phenomenology. It gives an overview of a new approach to identifying which feedback agents provide breakdown, how to model gas discharge conditions and reconcile the results with binary experiments and how to employ that knowledge in modelling gas discharges. The next step is an illustration on how to record volt-ampere characteristics and use them on one hand to obtain the breakdown voltage and, on the other, to identify the regime of operation and model the secondary electron yields. The second aspect of this section concerns understanding the different regimes, their anatomy, how those are generated and how free running oscillations occur. While temporal development is the most useful and interesting part of the new developments, the difficulty of presenting the data in a written form precludes an easy publication and discussion. Thus, we shall only mention some of the results that stem from these measurements. Most micro discharges operate in DC albeit with complex geometries. Thus, parallel plate micro discharge measurements were needed to establish that Townsend's theory, with all its recent extensions, is still valid until some very small gaps. We have shown, for example, how a long-path breakdown puts in jeopardy many experimental observations and why a flat left-hand side of the Paschen curve often does not represent good physics. We will also summarize a kinetic representation of the RF breakdown revealing a somewhat more complex picture than the standard model. Finally, we will address briefly the breakdown in radially inhomogeneous conditions and how that affects the measured properties of the discharge. This review has the goal of summarizing (rather than developing details of) the current status of the low-current DC discharges formation and operation as a discipline which, in spite of its very long history, is developing rapidly.

Design of high breakdown voltage GaN vertical HFETs with p-GaN buried buffer layers for power switching applications

NASA Astrophysics Data System (ADS)

Du, Jiangfeng; Liu, Dong; Zhao, Ziqi; Bai, Zhiyuan; Li, Liang; Mo, Jianghui; Yu, Qi

2015-07-01

To achieve a high breakdown voltage, a GaN vertical heterostructure field effect transistor with p-GaN buried layers (PBL-VHFET) is proposed in this paper. The breakdown voltage of this GaN-based PBL-VHFET could be improved significantly by the optimizing thickness of p-GaN buried layers and doping concentration in PBL. When the GaN buffer layer thickness is 15 μm, the thickness, length and p-doping concentration of PBL are 0.3 μm, 2.7 μm, and 3 × 1017 cm-3, respectively. Simulation results show that the breakdown voltage and on-resistance of the device with two p-GaN buried layers are 3022 V and 3.13 mΩ cm2, respectively. The average breakdown electric field would reach as high as 201.5 V/μm. Compared with the typical GaN vertical heterostructure FETs without PBL, both of breakdown voltage and average breakdown electric field of device are increased more than 50%.

Interaction Of CO2 Laser Nanosecond Pulse Train With The Metallic Targets In Optical Breakdown Regime

NASA Astrophysics Data System (ADS)

Apollonov, V. V.; Firsov, K. N.; Konov, V. I.; Nikitin, P. I.; Prokhorov, A. M.; Silenok, A. S.; Sorochenko, V. R.

1986-11-01

In the present paper the electric field and currents in the air-breakdown plasma, produced by the train of nanosecond pulses of TEA-002 - regenerative amplifier near the un-charged targets are studied. The breakdown thresholds and the efficiency of plasma-target heat transmission are also measured. The results of numerical calculations made for increasing of the pulse train contrast with respect to the background in a regenerative amplifier are advanced.

Nanoindentation investigation of HfO2 and Al2O3 films grown by atomic layer deposition

Treesearch

K. Tapily; Joseph E. Jakes; D. S. Stone; P. Shrestha; D. Gu; H. Baumgart; A. A. Elmustafa

2008-01-01

The challenges of reducing gate leakage current and dielectric breakdown beyond the 45 nm technology node have shifted engineers’ attention from the traditional and proven dielectric SiO2 to materials of higher dielectric constant also known as high-k materials such as hafnium oxide (HfO2) and aluminum oxide (Al2O3). These high-k materials are projected to...

Mechanism of Small Current Generation under Impulse Voltage Applications in Vacuum

NASA Astrophysics Data System (ADS)

Aoki, Keita; Yasukawa, Hideaki; Kojima, Hiroki; Homma, Mitsutaka; Shioiri, Tetsu; Okubo, Hitoshi

Small discharge not to accompany breakdown can occur under high electric field in vacuum, however the mechanism is not well clarified. We have found that the current of small discharge decreases with repeated voltage applications, and leads to electrode conditioning effect of raising withstand voltage. The inception of the current is delayed with the decrease of current, and the inception time and waveform change by gap length. On the other hand, under low vacuum condition, the current increases and reaches saturation with repeated voltage applications. From these discussions, we concluded that the generating process of small current depended on the adsorption and absorption gas of electrodes.

DC-driven plasma gun: self-oscillatory operation mode of atmospheric-pressure helium plasma jet comprised of repetitive streamer breakdowns

NASA Astrophysics Data System (ADS)

Wang, Xingxing; Shashurin, Alexey

2017-02-01

This paper presents and studies helium atmospheric pressure plasma jet comprised of a series of repetitive streamer breakdowns, which is driven by pure DC high voltage (self-oscillatory behavior). The repetition frequency of the breakdowns is governed by the geometry of discharge electrodes/surroundings and gas flow rate. Each next streamer is initiated when the electric field on the anode tip recovers after the previous breakdown and reaches the breakdown threshold value of about 2.5 kV cm-1. One type of the helium plasma gun designed using this operational principle is demonstrated. The gun operates on about 3 kV DC high voltage and is comprised of the series of the repetitive streamer breakdowns at a frequency of about 13 kHz.

Experimental investigation on the energy deposition and morphology of the electrical explosion of copper wire in vacuum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Zongqian; Shi, Yuanjie; Wang, Kun

2016-03-15

This paper presents the experimental results of the electrical explosion of copper wires in vacuum using negative nanosecond-pulsed current with magnitude of 1–2 kA. The 20 μm-diameter copper wires with different lengths are exploded with three different current rates. A laser probe is applied to construct the shadowgraphy and interferometry diagnostics to investigate the distribution and morphology of the exploding product. The interference phase shift is reconstructed from the interferogram, by which the atomic density distribution is calculated. Experimental results show that there exist two voltage breakdown modes depending on the amount of the specific energy deposition. For the strong-shunting mode, shuntingmore » breakdown occurs, leading to the short-circuit-like current waveform. For the weak-shunting mode with less specific energy deposition, the plasma generated during the voltage breakdown is not enough to form a conductive plasma channel, resulting in overdamped declining current waveform. The influence of the wire length and current rate on the characteristics of the exploding wires is also analyzed.« less

Theoretical analysis of shock induced depolarization and current generation in ferroelectrics

NASA Astrophysics Data System (ADS)

Agrawal, Vinamra; Bhattacharya, Kaushik

Ferroelectric generators are used to generate large magnitude current pulse by impacting a polarized ferroelectric material. The impact causes depolarization of the material and at high impact speeds, dielectric breakdown. Depending on the loading conditions and the electromechanical boundary conditions, the current or voltage profiles obtained vary. In this study, we explore the large deformation dynamic response of a ferroelectric material. Using the Maxwell's equations, conservation laws and the second law of thermodynamics, we derive the governing equations for the phase boundary propagation as well as the driving force acting on it. We allow for the phase boundary to contain surface charges which introduces the contribution of curvature of phase boundary in the governing equations and the driving force. This type of analysis accounts for the dielectric breakdown and resulting conduction in the material. Next, we implement the equations derived to solve a one dimensional impact problem on a ferroelectric material under different electrical boundary conditions. The constitutive law is chosen to be piecewise quadratic in polarization and quadratic in the strain. We solve for the current profile generated in short circuit case and for voltage profile in open circuited case. This work was made possible by the financial support of the US Air Force Office of Scientific Research through the Center of Excellence in High Rate Deformation Physics of Heterogeneous Materials (Grant: FA 9550-12-1-0091).

Electrical breakdown and nanogap formation of indium oxide core/shell heterostructure nanowires.

PubMed

Jung, Minkyung; Song, Woon; Sung Lee, Joon; Kim, Nam; Kim, Jinhee; Park, Jeunghee; Lee, Hyoyoung; Hirakawa, Kazuhiko

2008-12-10

We report the electrical breakdown behavior and subsequent nanogap formation of In(2)O(3)/InO(x) core/shell heterostructure nanowires with substrate-supported and suspended structures. The radial heterostructure nanowires, composed of crystalline In(2)O(3) cores and amorphous In-rich shells, are grown by chemical vapor deposition. As the nanowires broke down, they exhibited two distinct current drops in the current-voltage characteristics. The tips of the broken nanowires were found to have a cone or a volcano shape depending on the width of the nanowire. The shape, the size, and the position of the nanogap depend strongly on the device structure and the nanowire dimensions. The substrate-supported and the suspended devices exhibit distinct breakdown behavior which can be explained by the diffusive thermal transport model. The breakdown temperature of the nanowire is estimated to be about 450 K, close to the melting temperature of indium. We demonstrated the usefulness of this technique by successful fabrication of working pentacene field-effect transistors.

Specific features of a single-pulse sliding discharge in neon near the threshold for spark breakdown

NASA Astrophysics Data System (ADS)

Trusov, K. K.

2017-08-01

Experimental data on the spatial structure of a single-pulse sliding discharge in neon at voltages below, equal to, and above the threshold for spark breakdown are discussed. The experiments were carried at gas pressures of 30 and 100 kPa and different polarities of the discharge voltage. Photographs of the plasma structure in two discharge chambers with different dimensions of the discharge zone and different thicknesses of an alumina dielectric plate on the surface of which the discharge develops are inspected. Common features of the prebreakdown discharge and its specific features depending on the voltage polarity and gas pressure are analyzed. It is shown that, at voltages below the threshold for spark breakdown, a low-current glow discharge with cathode and anode spots develops in the electrode gap. Above the breakdown threshold, regardless of the voltage polarity, spark channels directed from the cathode to the anode develop against the background of a low-current discharge.

Time and space resolved current density mapping in three dimensions using magnetic field probe array in a high voltage coaxial gap

NASA Astrophysics Data System (ADS)

Cordaro, S. W.; Bott-Suzuki, S. C.

2017-12-01

We present an experimental analysis of the symmetry of current density in a coaxial geometry, diagnosed using a magnetic field probe array and calculations of the Fowler-Nordheim enhancement factor. Data were collected on the coaxial gap breakdown device (240 A, 25 kV, 150 ns, ˜0.1 Hz), and data from experiments using 2 different gap sizes and different penetration depths are compared over runs comprising 50 shots for each case. The magnetic field probe array quantifies the distribution of current density at three axial locations, on either sides of a vacuum breakdown, and tracks the evolution with time and space. The results show asymmetries in current density, which can be influenced by changes in the gap size and the penetration depth (of the center electrode into the outer electrode). For smaller gap sizes (400 μm), symmetric current profiles were not observed, and the change in the penetration depth changes both the symmetric behavior of the current density and the enhancement factor. For larger gaps (900 μm), current densities were typically more uniform and less influenced by the penetration depth, which is reflected in the enhancement factor values. It is possible that the change in inductance caused by the localization of current densities plays a role in the observed behavior.

Preparation and Dielectric Properties of SiC/LSR Nanocomposites for Insulation of High Voltage Direct Current Cable Accessories

PubMed Central

Shang, Nanqiang; Chen, Qingguo; Wei, Xinzhe

2018-01-01

The conductivity mismatch in the composite insulation of high voltage direct current (HVDC) cable accessories causes electric field distribution distortion and even insulation breakdown. Therefore, a liquid silicone rubber (LSR) filled with SiC nanoparticles is prepared for the insulation of cable accessories. The micro-morphology of the SiC/LSR nanocomposites is observed by scanning electron microscopy, and their trap parameters are characterized using thermal stimulated current (TSC) tests. Moreover, the dielectric properties of SiC/LSR nanocomposites with different SiC concentrations are tested. The results show that the 3 wt % SiC/LSR sample has the best nonlinear conductivity, more than one order of magnitude higher than that of pure LSR with improved temperature and nonlinear conductivity coefficients. The relative permittivity increased 0.2 and dielectric loss factor increased 0.003, while its breakdown strength decreased 5 kV/mm compared to those of pure LSR. Moreover, the TSC results indicate the introduction of SiC nanoparticles reduced the trap level and trap density. Furthermore, the SiC nanoparticles filling significantly increased the sensitivity of LSR to electric field stress and temperature changes, enhancing the conductivity and electric field distribution within the HVDC cable accessories, thus improving the reliability of the HVDC cable accessories. PMID:29518054

Preparation and Dielectric Properties of SiC/LSR Nanocomposites for Insulation of High Voltage Direct Current Cable Accessories.

PubMed

Shang, Nanqiang; Chen, Qingguo; Wei, Xinzhe

2018-03-08

The conductivity mismatch in the composite insulation of high voltage direct current (HVDC) cable accessories causes electric field distribution distortion and even insulation breakdown. Therefore, a liquid silicone rubber (LSR) filled with SiC nanoparticles is prepared for the insulation of cable accessories. The micro-morphology of the SiC/LSR nanocomposites is observed by scanning electron microscopy, and their trap parameters are characterized using thermal stimulated current (TSC) tests. Moreover, the dielectric properties of SiC/LSR nanocomposites with different SiC concentrations are tested. The results show that the 3 wt % SiC/LSR sample has the best nonlinear conductivity, more than one order of magnitude higher than that of pure LSR with improved temperature and nonlinear conductivity coefficients. The relative permittivity increased 0.2 and dielectric loss factor increased 0.003, while its breakdown strength decreased 5 kV/mm compared to those of pure LSR. Moreover, the TSC results indicate the introduction of SiC nanoparticles reduced the trap level and trap density. Furthermore, the SiC nanoparticles filling significantly increased the sensitivity of LSR to electric field stress and temperature changes, enhancing the conductivity and electric field distribution within the HVDC cable accessories, thus improving the reliability of the HVDC cable accessories.

Direct current ballast circuit for metal halide lamp

NASA Technical Reports Server (NTRS)

Lutus, P. (Inventor)

1981-01-01

A direct current ballast circuit for a two electrode metal halide lamp is described. Said direct current ballast circuit includes a low voltage DC input and a high frequency power amplifier and power transformer for developing a high voltage output. The output voltage is rectified by diodes and filtered by inductor and capacitor to provide a regulated DC output through commutating diodes to one terminal of the lamp at the output terminal. A feedback path from the output of the filter capacitor through the bias resistor to power the high frequency circuit which includes the power amplifier and the power transformer for sustaining circuit operations during low voltage transients on the input DC supply is described. A current sensor connected to the output of the lamp through terminal for stabilizing lamp current following breakdown of the lamp is described.

On-line determination of nanometric and sub-micrometric particle physicochemical characteristics using spectral imaging-aided Laser-Induced Breakdown Spectroscopy coupled with a Scanning Mobility Particle Sizer

NASA Astrophysics Data System (ADS)

Amodeo, Tanguy; Dutouquet, Christophe; Le Bihan, Olivier; Attoui, Michel; Frejafon, Emeric

2009-10-01

Laser-Induced Breakdown Spectroscopy has been employed to detect sodium chloride and metallic particles with sizes ranging from 40 nm up to 1 µm produced by two different particle generators. The Laser-Induced Breakdown Spectroscopy technique combined with a Scanning Mobility Particle Sizer was evaluated as a potential candidate for workplace surveillance in industries producing nanoparticle-based materials. Though research is still currently under way to secure nanoparticle production processes, the risk of accidental release is not to be neglected. Consequently, there is an urgent need for the manufacturers to have at their command a tool enabling leak detection in-situ and in real time so as to protect workers from potential exposure. In this context, experiments dedicated to laser-induced plasma particle interaction were performed. To begin with, spectral images of the laser-induced plasma vaporizing particles were recorded to visualize the spatio-temporal evolution of the atomized matter and to infer the best recording parameters for Laser-Induced Breakdown Spectroscopy analytical purposes, taking into account our experimental set-up specificity. Then, on this basis, time-resolved spectroscopic measurements were performed to make a first assumption of the Laser-Induced Breakdown Spectroscopy potentialities. Particle size dependency on the LIBS signal was examined. Repeatability and limits of detection were assessed and discussed. All the experiments carried out with low particle concentrations point out the high time delays corresponding to the Laser-Induced Breakdown Spectroscopy signal emergence. Plasma temperature temporal evolution was found to be a key parameter to explain this peculiarity inherent to laser/plasma/particle interaction.

Source-drain burnout mechanism of GaAs power MESFETS: Three terminal effects

NASA Astrophysics Data System (ADS)

Takamiya, Saburo; Sonoda, Takuji; Yamanouchi, Masahide; Fujioka, Takashi; Kohno, Masaki

1997-03-01

Theoretical expressions for thermal and electrical feedback effects are derived. These limit the power capability of a power FET and lead a device to catastrophic breakdown (source-drain burnout) when the loop gain of the former reaches unity. Field emission of thermally excited electrons at the Schottky gate plays the key role in thermal feedback, while holes being impact ionized by the drain current play a similar role in the electrical feedback. Thermal feedback is dominant in a high temperature and low drain voltage area. Electrical feedback is dominant in a high drain voltage and low temperature area. In the first area, a high junction temperature is the main factor causing the thermal runaway of the device. In the second area, the electrcal feedback increases the drain current and the temperature and gives a trigger to the thermal feedback so that it reaches unity more easily. Both effects become significant in proportion to transconductance and gate bias resistance, and cause simultaneous runaway of the gate and drain currents. The expressions of the loop gains clearly indicate the safe operating conditions for a power FET. C-band 4 W (1 chip) and 16 W (4 chip) GaAs MESFETs were used as the experimental samples. With these devices the simultaneous runaway of the gate and the drain currents, apparent dependence of the three teminal breakdown voltage on the gate bias resistance in the region dominated by electrical feedback, the rapid increase of the field emitted current at the critical temperature and clear coincidence between the measured and calculated three terminal gate currents both in the thermal feedback dominant region, etc. are demonstrated. The theory explains the experimental results well.

Towards a fully kinetic 3D electromagnetic particle-in-cell model of streamer formation and dynamics in high-pressure electronegative gases

NASA Astrophysics Data System (ADS)

Rose, D. V.; Welch, D. R.; Clark, R. E.; Thoma, C.; Zimmerman, W. R.; Bruner, N.; Rambo, P. K.; Atherton, B. W.

2011-09-01

Streamer and leader formation in high pressure devices is dynamic process involving a broad range of physical phenomena. These include elastic and inelastic particle collisions in the gas, radiation generation, transport and absorption, and electrode interactions. Accurate modeling of these physical processes is essential for a number of applications, including high-current, laser-triggered gas switches. Towards this end, we present a new 3D implicit particle-in-cell simulation model of gas breakdown leading to streamer formation in electronegative gases. The model uses a Monte Carlo treatment for all particle interactions and includes discrete photon generation, transport, and absorption for ultra-violet and soft x-ray radiation. Central to the realization of this fully kinetic particle treatment is an algorithm that manages the total particle count by species while preserving the local momentum distribution functions and conserving charge [D. R. Welch, T. C. Genoni, R. E. Clark, and D. V. Rose, J. Comput. Phys. 227, 143 (2007)]. The simulation model is fully electromagnetic, making it capable of following, for example, the evolution of a gas switch from the point of laser-induced localized breakdown of the gas between electrodes through the successive stages of streamer propagation, initial electrode current connection, and high-current conduction channel evolution, where self-magnetic field effects are likely to be important. We describe the model details and underlying assumptions used and present sample results from 3D simulations of streamer formation and propagation in SF6.

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p(sup +)n Junction Diodes--Part II: Dynamic Breakdown Properties. Part 2; Dynamic Breakdown Properties

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Fazi, Christian

1999-01-01

This paper outlines the dynamic reverse-breakdown characteristics of low-voltage (<250 V) small-area <5 x 10(exp -4) sq cm 4H-SiC p(sup +)n diodes subjected to nonadiabatic breakdown-bias pulsewidths ranging from 0.1 to 20 microseconds. 4H-SiC diodes with and without elementary screw dislocations exhibited positive temperature coefficient of breakdown voltage and high junction failure power densities approximately five times larger than the average failure power density of reliable silicon pn rectifiers. This result indicates that highly reliable low-voltage SiC rectifiers may be attainable despite the presence of elementary screw dislocations. However, the impact of elementary screw dislocations on other more useful 4H-SiC power device structures, such as high-voltage (>1 kV) pn junction and Schottky rectifiers, and bipolar gain devices (thyristors, IGBT's, etc.) remains to be investigated.

Breakdowns in Coordination Between Air Traffic Controllers

NASA Technical Reports Server (NTRS)

Bearman, Chris; Orasanu, Judith; Miller, Ronald C.

2011-01-01

This talk outlines the complexity of coordination in air traffic control, introduces the NextGen technologies, identifies common causes for coordination breakdowns in air traffic control and examines whether these causes are likely to be reduced with the introduction of NextGen technologies. While some of the common causes of breakdowns will be reduced in a NextGen environment this conclusion should be drawn carefully given the current stage of development of the technologies and the observation that new technologies often shift problems rather than reduce them.

Enhancing breakdown strength and energy storage performance of PVDF-based nanocomposites by adding exfoliated boron nitride

NASA Astrophysics Data System (ADS)

Xie, Yunchuan; Wang, Jian; Yu, Yangyang; Jiang, Wanrong; Zhang, Zhicheng

2018-05-01

Polymer/ceramic nanocomposites are promising dielectrics for high energy storage density (Ue) capacitors. However, their low breakdown strength (Eb) and high dielectric loss due to heterogeneous structure seriously limit their applications under high electric field. In this work, boron nitride nano-sheets (BNNS) exfoliated from BN particles were introduced into PVDF-based BaTiO3 (mBT) binary composites to reduce the dielectric loss and promote the Ue. The effects of BNNS on the dielectric properties, especially breakdown resistance, and energy storage performance of the resultant composites were carefully investigated by comparing with the composites without BNNS. The introduction of BNNS could significantly improve Eb and Ue of the final composites. Ternary composite with particle contents of 6 wt% BNNS and 5 wt% mBT presented a Eb of about 400 MV/m and Ue of 5.2 J/cm3, which is 40% and 30% superior to that of the binary composite with 5 wt% mBT, respectively. That may be attributed to the 2D structure, high bulk electrical resistivity, and fine dispersion in PVDF of BNNS, which is acting as an efficient insulating barrier against the leakage current and charges conduction. The depression effect of BNNS onto the charge mobility and the interfacial polarization of the polymer composites is finely addressed, which may offer a promising strategy for the fabrication of high-k polymer composites with low loss.

Breakdown voltage reliability improvement in gas-discharge tube surge protectors employing graphite field emitters

NASA Astrophysics Data System (ADS)

Žumer, Marko; Zajec, Bojan; Rozman, Robert; Nemanič, Vincenc

2012-04-01

Gas-discharge tube (GDT) surge protectors are known for many decades as passive units used in low-voltage telecom networks for protection of electrical components from transient over-voltages (discharging) such as lightning. Unreliability of the mean turn-on DC breakdown voltage and the run-to-run variability has been overcome successfully in the past by adding, for example, a radioactive source inside the tube. Radioisotopes provide a constant low level of free electrons, which trigger the breakdown. In the last decades, any concept using environmentally harmful compounds is not acceptable anymore and new solutions were searched. In our application, a cold field electron emitter source is used as the trigger for the gas discharge but with no activating compound on the two main electrodes. The patent literature describes in details the implementation of the so-called trigger wires (auxiliary electrodes) made of graphite, placed in between the two main electrodes, but no physical explanation has been given yet. We present experimental results, which show that stable cold field electron emission current in the high vacuum range originating from the nano-structured edge of the graphite layer is well correlated to the stable breakdown voltage of the GDT surge protector filled with a mixture of clean gases.

Runaway breakdown and hydrometeors in lightning initiation.

PubMed

Gurevich, A V; Karashtin, A N

2013-05-03

The particular electric pulse discharges are observed in thunderclouds during the initiation stage of negative cloud-to-ground lightning. The discharges are quite different from conventional streamers or leaders. A detailed analysis reveals that the shape of the pulses is determined by the runaway breakdown of air in the thundercloud electric field initiated by extensive atmospheric showers (RB-EAS). The high amplitude of the pulse electric current is due to the multiple microdischarges at hydrometeors stimulated and synchronized by the low-energy electrons generated in the RB-EAS process. The series of specific pulse discharges leads to charge reset from hydrometeors to the free ions and creates numerous stretched ion clusters, both positive and negative. As a result, a wide region in the thundercloud with a sufficiently high fractal ion conductivity is formed. The charge transport by ions plays a decisive role in the lightning leader preconditioning.

From organized high throughput data to phenomenological theory: The example of dielectric breakdown

NASA Astrophysics Data System (ADS)

Kim, Chiho; Pilania, Ghanshyam; Ramprasad, Rampi

Understanding the behavior (and failure) of dielectric insulators experiencing extreme electric fields is critical to the operation of present and emerging electrical and electronic devices. Despite its importance, the development of a predictive theory of dielectric breakdown has remained a challenge, owing to the complex multiscale nature of this process. Here, we focus on the intrinsic dielectric breakdown field of insulators--the theoretical limit of breakdown determined purely by the chemistry of the material, i.e., the elements the material is composed of, the atomic-level structure, and the bonding. Starting from a benchmark dataset (generated from laborious first principles computations) of the intrinsic dielectric breakdown field of a variety of model insulators, simple predictive phenomenological models of dielectric breakdown are distilled using advanced statistical or machine learning schemes, revealing key correlations and analytical relationships between the breakdown field and easily accessible material properties. The models are shown to be general, and can hence guide the screening and systematic identification of high electric field tolerant materials.

Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer.

PubMed

Pang, Chin-Sheng; Hwu, Jenn-Gwo

2014-01-01

Improvement in the time-zero dielectric breakdown (TZDB) endurance of metal-oxide-semiconductor (MOS) capacitor with stacking structure of Al/HfO2/SiO2/Si is demonstrated in this work. The misalignment of the conduction paths between two stacking layers is believed to be effective to increase the breakdown field of the devices. Meanwhile, the resistance of the dielectric after breakdown for device with stacking structure would be less than that of without stacking structure due to a higher breakdown field and larger breakdown power. In addition, the role of interfacial layer (IL) in the control of the interface trap density (D it) and device reliability is also analyzed. Device with a thicker IL introduces a higher breakdown field and also a lower D it. High-resolution transmission electron microscopy (HRTEM) of the samples with different IL thicknesses is provided to confirm that IL is needed for good interfacial property.

Proceedings of the Particle Beam Research Workshop, Held at US Air Force Academy, Colorado, Springs, CO on 10-11 January 1980

DTIC Science & Technology

1980-05-01

Components 25 2.7.1 Transformers 25 2.7.2 Solid Dielectric 26 2.7.3 Cables and Connectors 27 III. SOURCES 29 3.1 Preface 29 3.2 Electron Sources 30 3.3 High...be developed which can withstand high voltages , high current densities, and pass large energies per pulse with high repetition rates, high reliability...Ceramics - high voltage hold-off 2) Dielectrics - hold-off recovery after breakdown 3) Metals - low erosion rates, higher j and esaturation 4) Degradation

Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

PubMed

Bae, Jong-Ho; Lee, Jong-Ho

2016-05-01

A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec.

Design, fabrication, and high-gradient testing of an X -band, traveling-wave accelerating structure milled from copper halves

NASA Astrophysics Data System (ADS)

Argyropoulos, Theodoros; Catalan-Lasheras, Nuria; Grudiev, Alexej; Mcmonagle, Gerard; Rodriguez-Castro, Enrique; Syrachev, Igor; Wegner, Rolf; Woolley, Ben; Wuensch, Walter; Zha, Hao; Dolgashev, Valery; Bowden, Gorden; Haase, Andrew; Lucas, Thomas Geoffrey; Volpi, Matteo; Esperante-Pereira, Daniel; Rajamäki, Robin

2018-06-01

A prototype 11.994 GHz, traveling-wave accelerating structure for the Compact Linear Collider has been built, using the novel technique of assembling the structure from milled halves. The use of milled halves has many advantages when compared to a structure made from individual disks. These include the potential for a reduction in cost, because there are fewer parts, as well as a greater freedom in choice of joining technology because there are no rf currents across the halves' joint. Here we present the rf design and fabrication of the prototype structure, followed by the results of the high-power test and post-test surface analysis. During high-power testing the structure reached an unloaded gradient of 100 MV /m at a rf breakdown rate of less than 1.5 ×10-5 breakdowns /pulse /m with a 200 ns pulse. This structure has been designed for the CLIC testing program but construction from halves can be advantageous in a wide variety of applications.

Effects of nuclear radiation on a high-reliability silicon power diode. 4: Analysis of reverse bias characteristics

NASA Technical Reports Server (NTRS)

Been, J. F.

1973-01-01

The effects of nuclear radiation on the reverse bias electrical characteristics of one hundred silicon power diodes were investigated. On a percentage basis, the changes in reverse currents were large but, due to very low initial values, this electrical characteristic was not the limiting factor in use of these diodes. These changes were interpreted in terms of decreasing minority carrier lifetimes as related to generation-recombination currents. The magnitudes of reverse voltage breakdown were unaffected by irradiation.

Standoff Detection of Geological Samples of Metal, Rock, and Soil at Low Pressures Using Laser-Induced Breakdown Spectroscopy.

PubMed

Choi, Jae-Jun; Choi, Soo-Jin; Yoh, Jack J

2016-09-01

Categorized certified reference materials simulating metal, rock, soils, or dusts are used to demonstrate the standoff detection capability of laser-induced breakdown spectroscopy (LIBS) at severely low pressure conditions. A Q-switched Nd:YAG laser operating at 1064 nm with 17.2-50 mJ energy per pulse was used to obtain sample signals from a distance of 5.5 m; the detection sensitivity at pressures down to 0.01 torr was also analyzed. The signal intensity response to pressure changes is explained by the ionization energy and electronegativity of elements, and from the estimated full width half-maximum (FWHM) and electron density, the decrease in both background noise and line broadening makes it suitable for low pressure detection using the current standoff LIBS configuration. The univariate analyses further showed high correlation coefficients for geological samples. Therefore, the present work has extended the current state-of-the-art of standoff LIBS aimed at harsh environment detection. © The Author(s) 2016.

Study on the influence of three-grid assembly thermal deformation on breakdown times and an ion extraction process

NASA Astrophysics Data System (ADS)

Mingming, SUN; Yanhui, JIA; Yongjie, HUANG; Juntai, YANG; Xiaodong, WEN; Meng, WANG

2018-04-01

In order to study the influence of three-grid assembly thermal deformation caused by heat accumulation on breakdown times and an ion extraction process, a hot gap test and a breakdown time test are carried out to obtain thermal deformation of the grids when the thruster is in 5 kW operation mode. Meanwhile, the fluid simulation method and particle-in-cell-Monte Carlo collision (PIC-MCC) method are adopted to simulate the ion extraction process according to the previous test results. The numerical calculation results are verified by the ion thruster performance test. The results show that after about 1.2 h operation, the hot gap between the screen grid and the accelerator grid reduce to 0.25–0.3 mm, while the hot gap between the accelerator grid and the decelerator grid increase from 1 mm to about 1.4 mm when the grids reach thermal equilibrium, and the hot gap is almost unchanged. In addition, the breakdown times experiment shows that 0.26 mm is the minimal safe hot gap for the grid assembly as the breakdown times improves significantly when the gap is smaller than this value. Fluid simulation results show that the plasma density of the screen grid is in the range 6 × 1017–6 × 1018 m13 and displays a parabolic characteristic, while the electron temperature gradually increases along the axial direction. The PIC-MCC results show that the current falling of an ion beam through a single aperture is significant. Meanwhile, the intercepted current of the accelerator grid and the decelerator grid both increase with the change in the hot gap. The ion beam current has optimal perveance status without thermal deformation, and the intercepted current of the accelerator grid and the decelerator grid are 3.65 mA and 6.26 mA, respectively. Furthermore, under the effect of thermal deformation, the ion beam current has over-perveance status, and the intercepted current of the accelerator grid and the decelerator grid are 10.46 mA and 18.24 mA, respectively. Performance test results indicate that the breakdown times increase obviously. The intercepted current of the accelerator grid and the decelerator grid increases to 13 mA and 16.5 mA, respectively, due to the change in the hot gap after 1.5 h operation. The numerical calculation results are well consistent with performance test results, and the error comes mainly from the test uncertainty of the hot gap.

Large exchange-dominated domain wall velocities in antiferromagnetically coupled nanowires

NASA Astrophysics Data System (ADS)

Kuteifan, Majd; Lubarda, M. V.; Fu, S.; Chang, R.; Escobar, M. A.; Mangin, S.; Fullerton, E. E.; Lomakin, V.

2016-04-01

Magnetic nanowires supporting field- and current-driven domain wall motion are envisioned for methods of information storage and processing. A major obstacle for their practical use is the domain-wall velocity, which is traditionally limited for low fields and currents due to the Walker breakdown occurring when the driving component reaches a critical threshold value. We show through numerical and analytical modeling that the Walker breakdown limit can be extended or completely eliminated in antiferromagnetically coupled magnetic nanowires. These coupled nanowires allow for large domain-wall velocities driven by field and/or current as compared to conventional nanowires.

Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process

NASA Astrophysics Data System (ADS)

Wang, Yan-Rong; Yang, Hong; Xu, Hao; Wang, Xiao-Lei; Luo, Wei-Chun; Qi, Lu-Wei; Zhang, Shu-Xiang; Wang, Wen-Wu; Yan, Jiang; Zhu, Hui-Long; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

2015-11-01

A multi-deposition multi-annealing technique (MDMA) is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device’s performance. In this paper, we systematically investigate the electrical parameters and the time-dependent dielectric breakdown (TDDB) characteristics of positive channel metal oxide semiconductor (PMOS) under different MDMA process conditions, including the deposition/annealing (D&A) cycles, the D&A time, and the total annealing time. The results show that the increases of the number of D&A cycles (from 1 to 2) and D&A time (from 15 s to 30 s) can contribute to the results that the gate leakage current decreases by about one order of magnitude and that the time to fail (TTF) at 63.2% increases by about several times. However, too many D&A cycles (such as 4 cycles) make the equivalent oxide thickness (EOT) increase by about 1 Å and the TTF of PMOS worsen. Moreover, different D&A times and numbers of D&A cycles induce different breakdown mechanisms. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601) and the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129).

Gas breakdown driven by L band short-pulse high-power microwave

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang Yiming; Yuan Chengwei; Qian Baoliang

2012-12-15

High power microwave (HPM) driven gas breakdown is a major factor in limiting the radiation and transmission of HPM. A method that HPM driven gas breakdown could be obtained by changing the aperture of horn antenna is studied in this paper. Changing the effective aperture of horn antenna can adjust the electric field in near field zone, leading to gas breakdown. With this method, measurements of air and SF{sub 6} breakdowns are carried out on a magnetically insulated transmission-line oscillators, which is capable of generating HPM with pulse duration of 30 ns, and frequency of 1.74 GHz. The typical breakdownmore » waveforms of air and SF{sub 6} are presented. Besides, the breakdown field strengths of the two gases are derived at different pressures. It is found that the effects of air and SF{sub 6} breakdown on the transmission of HPM are different: air breakdown mainly shortens the pulse width of HPM while SF{sub 6} breakdown mainly reduces the peak output power of HPM. The electric field threshold of SF{sub 6} is about 2.4 times larger than that of air. These differences suggest that gas properties have a great effect on the transmission characteristic of HPM in gases.« less

Direct visualization and in-depth physical study of metal filament formation in percolated high-κ dielectrics

NASA Astrophysics Data System (ADS)

Li, X.; Pey, K. L.; Bosman, M.; Liu, W. H.; Kauerauf, T.

2010-01-01

The migration of Ta atoms from a transistor gate electrode into the percolated high-κ (HK) gate dielectrics is directly shown using transmission electron microscopy analysis. A nanoscale metal filament that formed under high current injection is identified to be the physical defect responsible for the ultrafast transient breakdown (BD) of the metal-gate/high-κ (MG/HK) gate stacks. This highly conductive metal filament poses reliability concerns for MG/HK gate stacks as it significantly reduces the post-BD reliability margin of a transistor.

Laser Radiation-Induced Air Breakdown And Plasma Shielding

NASA Astrophysics Data System (ADS)

Smith, David C.

1981-12-01

Gas breakdown, or the ionization of the air in the path of a high power laser, is a limit on the maximum intensity which can be propagated through the atmosphere. When the threshold for breakdown is exceeded, a high density, high temperature plasma is produced which is opaque to visible and infrared wavelengths and thus absorbs the laser radiation. The threshold in the atmosphere is significantly lower than in pure gases because of laser interaction and vaporization of aerosols. This aspect of air breakdown is discussed in detail. Parametric studies have revealed the scaling laws of breakdown as to wavelength and laser pulse duration, and these will be discussed and compared with existing models. A problem closely related to breakdown is the plasma produc-tion when a high intensity laser interacts with a surface. In this case, the plasma can be beneficial for coupling laser energy into shiny surfaces. The plasma absorbs the laser radiation and reradiates the energy at shorter wavelengths; this shorter wavelength radiation is absorbed by the surface, thus increasing the coupling of energy into the surface. The conditions for the enhancement of laser coupling into surfaces will be discussed, particularly for cw laser beams, an area of recent experimen-tal investigation.

Al0 0.3Ga 0.7N PN diode with breakdown voltage >1600 V

DOE PAGES

Allerman, A. A.; Armstrong, A. M.; Fischer, A. J.; ...

2016-07-21

Demonstration of Al0 0.3Ga 0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm 2 was achieved under DC forward bias and a reverse leakage current <3 nA was measured for voltages <1200 V. The differential on-resistance of 16 mΩ cm 2 is limited by the lateral conductivity of the n-type contact layer requiredmore » by the front-surface contact geometry of the device. An effective critical electric field of 5.9 MV/cm was determined from the epilayer properties and the reverse current–voltage characteristics. To our knowledge, this is the first aluminium gallium nitride (AlGaN)-based PN diode exhibiting a breakdown voltage in excess of 1 kV. Finally, we note that a Baliga figure of merit (V br 2/R spec,on) of 150 MW/cm 2 found is the highest reported for an AlGaN PN diode and illustrates the potential of larger-bandgap AlGaN alloys for high-voltage devices.« less

The use of wooden sticks to assess stream ecosystem functioning: comparison with leaf breakdown rates.

PubMed

Arroita, Maite; Aristi, Ibon; Flores, Lorea; Larrañaga, Aitor; Díez, Joserra; Mora, Juanita; Romaní, Anna M; Elosegi, Arturo

2012-12-01

Breakdown of organic matter is a key process in streams and rivers, and thus, it has potential to assess functional impairment of river ecosystems. Because the litter-bag method commonly used to measure leaf breakdown is time consuming and expensive, several authors proposed to measure breakdown of wooden sticks instead. Nevertheless, currently there is little information on the performance of wooden sticks versus that of leaves. We compared the breakdown of tongue depressors made of untreated poplar wood, to that of six common leaf species in two large streams in the Basque Country (northern Spain), one polluted and the other unpolluted. Breakdown rates ranged from 0.0011 to 0.0120 day(-1), and were significantly lower in the polluted stream. Wooden sticks performed very similarly to leaves, but were less affected by flood-induced physical abrasion. The ranking of the materials according to their breakdown rate was consistent, irrespective of the stream. The experiments with leaves were 10 times more costly for breakdown rate, 4 times if we include the rest of the variables measured. Therefore wooden sticks offer a promising tool to assess river ecosystem functioning, although more research is necessary to define the thresholds for ecosystem functional impairment. Copyright © 2012 Elsevier B.V. All rights reserved.

Temperature dependent simulation of diamond depleted Schottky PIN diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti

2016-06-14

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond.more » The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.« less

Very Low Frequency Breakdown Properties of Electrical Insulation Materials at Cryogenic Temperatures

NASA Astrophysics Data System (ADS)

Sauers, I.; Tuncer, E.; Polizos, G.; James, D. R.; Ellis, A. R.; Pace, M. O.

2010-04-01

For long cables or equipment with large capacitance it is not always possible to conduct high voltage withstand tests at 60 Hz due to limitations in charging currents of the power supply. Very low frequency (typically at a frequency of 0.1 Hz) has been used for conventional cables as a way of getting around the charging current limitation. For superconducting grid applications the same issues apply. However there is very little data at cryogenic temperatures on how materials perform at low frequency compared to 60 Hz and whether higher voltages should be applied when performing a high voltage acceptability test. Various materials including G10 (fiberglass reinforced plastic or FRP), Cryoflex™ (a tape insulation used in some high temperature superconducting cables), kapton (commonly used polyimide), polycarbonate, and polyetherimide, and in liquid nitrogen alone have been tested using a step method for frequencies of 60 Hz, 0.1 Hz, and dc. The dwell time at each step was chosen so that the aging factor would be the same in both the 60 Hz and 0.1 Hz tests. The data indicated that, while there is a small frequency dependence for liquid nitrogen, there are significant differences for the solid materials studied. Breakdown data for these materials and for model cables will be shown and discussed.

Impact of rounded electrode corners on breakdown characteristics of AlGaN/GaN high-electron mobility transistors

NASA Astrophysics Data System (ADS)

Yamazaki, Taisei; Asubar, Joel T.; Tokuda, Hirokuni; Kuzuhara, Masaaki

2018-05-01

We investigated the impact of rounded electrode corners on the breakdown characteristics of AlGaN/GaN high-electron mobility transistors. For standard reference devices, catastrophic breakdown occurred predominantly near the sharp electrode corners. By introducing a rounded-electrode architecture, premature breakdown at the corners was mitigated. Moreover, the rate of breakdown voltage (V BR) degradation with an increasing gate width (W G) was significantly lower for devices with rounded corners. When W G was increased from 100 µm to 10 mm, the V BR of the reference device dropped drastically, from 1,200 to 300 V, whereas that of the rounded-electrode device only decreased to a respectable value of 730 V.

Nonequilibrium electronic transport in a one-dimensional Mott insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heidrich-Meisner, F.; Gonzalez, Ivan; Al-Hassanieh, K. A.

2010-01-01

We calculate the nonequilibrium electronic transport properties of a one-dimensional interacting chain at half filling, coupled to noninteracting leads. The interacting chain is initially in a Mott insulator state that is driven out of equilibrium by applying a strong bias voltage between the leads. For bias voltages above a certain threshold we observe the breakdown of the Mott insulator state and the establishment of a steady-state elec- tronic current through the system. Based on extensive time-dependent density-matrix renormalization-group simulations, we show that this steady-state current always has the same functional dependence on voltage, independent of the microscopic details of themore » model and we relate the value of the threshold to the Lieb-Wu gap. We frame our results in terms of the Landau-Zener dielectric breakdown picture. Finally, we also discuss the real-time evolution of the current, and characterize the current-carrying state resulting from the breakdown of the Mott insulator by computing the double occupancy, the spin structure factor, and the entanglement entropy.« less

A study of dielectric breakdown along insulators surrounding conductors in liquid argon

DOE PAGES

Lockwitz, Sarah; Jostlein, Hans

2016-03-22

High voltage breakdown in liquid argon is an important concern in the design of liquid argon time projection chambers, which are often used as neutrino and dark matter detectors. We have made systematic measurements of breakdown voltages in liquid argon along insulators surrounding negative rod electrodes where the breakdown is initiated at the anode. The measurements were performed in an open cryostat filled with commercial grade liquid argon exposed to air, and not the ultra-pure argon required for electron drift. While not addressing all high voltage concerns in liquid argon, these measurements have direct relevance to the design of highmore » voltage feedthroughs especially for averting the common problem of flash-over breakdown. The purpose of these tests is to understand the effects of materials, of breakdown path length, and of surface topology for this geometry and setup. We have found that the only material-specific effects are those due to their permittivity. We have found that the breakdown voltage has no dependence on the length of the exposed insulator. Lastly, a model for the breakdown mechanism is presented that can help inform future designs.« less

Numerical Study on Alternating Current Breakdown Mechanism Between Sphere-Sphere Electrodes in Transformer Oil-Based Magnetic Nanofluids.

PubMed

Lee, Won-Ho; Lee, Jong-Chul

2018-09-01

A numerical simulation was developed for magnetic nanoparticles in a liquid dielectric to investigate the AC breakdown voltage of the magnetic nanofluids according to the volume concentration of the magnetic nanoparticles. In prior research, we found that the dielectric breakdown voltage of the transformer oil-based magnetic nanofluids was positively or negatively affected according to the amount of magnetic nanoparticles under a testing condition of dielectric fluids, and the trajectory of the magnetic nanoparticles in a fabricated chip was visualized to verify the related phenomena via measurements and computations. In this study, a numerical simulation of magnetic nanoparticles in an insulating fluid was developed to model particle tracing for AC breakdown mechanisms happened to a sphere-sphere electrode configuration and to propose a possible mechanism regarding the change in the breakdown strength due to the behavior of the magnetic nanoparticles with different applied voltages.

Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

NASA Astrophysics Data System (ADS)

Murugapandiyan, P.; Ravimaran, S.; William, J.; Meenakshi Sundaram, K.

2017-11-01

In this article, we present the DC and microwave characteristics of a novel 30 nm T-gate InAlN/AlN/GaN HEMT with AlGaN back-barrier. The device structure is simulated by using Synopsys Sentaurus TCAD Drift-Diffusion transport model at room temperature. The device features are heavily doped (n++ GaN) source/drain regions with Si3N4 passivated device surface for reducing the contact resistances and gate capacitances of the device, which uplift the microwave characteristics of the HEMTs. 30 nm gate length D-mode (E-mode) HEMT exhibited a peak drain current density Idmax of 2.3 (2.42) A/mm, transconductance gm of 1.24(1.65) S/mm, current gain cut-off frequency ft of 262 (246) GHz, power gain cut-off frequency fmax of 246(290) GHz and the three terminal off-state breakdown voltage VBR of 40(38) V. The preeminent microwave characteristics with the higher breakdown voltage of the proposed GaN-based HEMT are the expected to be the most optimistic applicant for future high power millimeter wave applications.

Influence of in-situ ion-beam sputter cleaning on the conditioning effect of vacuum gaps

NASA Astrophysics Data System (ADS)

Kobayashi, Shinichi; Kojima, Hiroyuki; Saito, Yoshio

1994-05-01

An ion beam sputtering technique was used to clean the electrode surfaces of vacuum gaps. Ions of the sputtering gas were irradiated by means of an ion gun in a vacuum chamber attached to a breakdown measurement chamber. By providing in situ ion-beam sputter cleaning, this system makes it possible to make measurements free from contamination due to exposure to the air. The sputtering gas was He or Ar, and the electrodes were made of oxygen-free copper (purity more than 99.96%). An impulse voltage with the wave form of 64/700 microsecond(s) was applied to the test gap, and the pressure in the breakdown measurement chamber at the beginning of breakdown tests was 1.3 X 10-8 Pa. These experiments showed that ion-beam sputter cleaning results in higher breakdown fields after a repetitive breakdown conditioning procedure, and that He is more effective in improving hold- off voltages after the conditioning (under the same ion current density, the breakdown field was 300 MV/m for He sputtering and 200 MV/m for Ar sputtering). The breakdown fields at the first voltage application after the sputtering cleaning, on the other hand, were not improved.

Origin of large dark current increase in InGaAs/InP avalanche photodiode

NASA Astrophysics Data System (ADS)

Wen, J.; Wang, W. J.; Chen, X. R.; Li, N.; Chen, X. S.; Lu, W.

2018-04-01

The large dark current increase near the breakdown voltage of an InGaAs/InP avalanche photodiode is observed and analyzed from the aspect of bulk defects in the device materials. The trap level information is extracted from the temperature-dependent electrical characteristics of the device and the low temperature photoluminescence spectrum of the materials. Simulation results with the extracted trap level taken into consideration show that the trap is in the InP multiplication layer and the trap assisted tunneling current induced by the trap is the main cause of the large dark current increase with the bias from the punch-through voltage to 95% breakdown voltage.

Alternating current breakdown voltage of ice electret

NASA Astrophysics Data System (ADS)

Oshika, Y.; Tsuchiya, Y.; Okumura, T.; Muramoto, Y.

2017-09-01

Ice has low environmental impact. Our research objectives are to study the availability of ice as a dielectric insulating material at cryogenic temperatures. We focus on ferroelectric ice (iceXI) at cryogenic temperatures. The properties of iceXI, including its formation, are not clear. We attempted to obtain the polarized ice that was similar to iceXI under the applied voltage and cooling to 77 K. The polarized ice have a wide range of engineering applications as electronic materials at cryogenic temperatures. This polarized ice is called ice electret. The structural difference between ice electret and normal ice is only the positions of protons. The effects of the proton arrangement on the breakdown voltage of ice electret were shown because electrical properties are influenced by the structure of ice. We observed an alternating current (ac) breakdown voltage of ice electret and normal ice at 77 K. The mean and minimum ac breakdown voltage values of ice electret were higher than those of normal ice. We considered that the electrically weak part of the normal ice was improved by applied a direct electric field.

Peculiarities of the Short-Pulse Dielectric Strength of Vacuum Insulation

NASA Astrophysics Data System (ADS)

Nefedtsev, E. V.; Onischenko, S. A.; Batrakov, A. V.

2017-12-01

Results of a study of the short-pulse dielectric strength of millimeter plane vacuum gaps with electrodes that have been treated with an electron beam are presented. It is shown that the electric field strength of the first breakdown of vacuum gaps with pure metal electrodes is determined to a significant extent by the crystal structure of the metal. The development of the first short-pulse breakdown is accompanied by a very abrupt growth of the electric current. The short duration of the test pulses rules out the influence of all well-known inertial mechanisms of breakdown with characteristic action times greater than 20 ns. Some general assumptions regarding the nature of the factors stimulating the short-pulse breakdown of vacuum gaps are considered.

From Organized High-Throughput Data to Phenomenological Theory using Machine Learning: The Example of Dielectric Breakdown

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Chiho; Pilania, Ghanshyam; Ramprasad, Ramamurthy

Understanding the behavior (and failure) of dielectric insulators experiencing extreme electric fields is critical to the operation of present and emerging electrical and electronic devices. Despite its importance, the development of a predictive theory of dielectric breakdown has remained a challenge, owing to the complex multiscale nature of this process. We focus on the intrinsic dielectric breakdown field of insulators—the theoretical limit of breakdown determined purely by the chemistry of the material, i.e., the elements the material is composed of, the atomic-level structure, and the bonding. Starting from a benchmark dataset (generated from laborious first principles computations) of the intrinsicmore » dielectric breakdown field of a variety of model insulators, simple predictive phenomenological models of dielectric breakdown are distilled using advanced statistical or machine learning schemes, revealing key correlations and analytical relationships between the breakdown field and easily accessible material properties. Lastly, the models are shown to be general, and can hence guide the screening and systematic identification of high electric field tolerant materials.« less

From Organized High-Throughput Data to Phenomenological Theory using Machine Learning: The Example of Dielectric Breakdown

DOE PAGES

Kim, Chiho; Pilania, Ghanshyam; Ramprasad, Ramamurthy

2016-02-02

Understanding the behavior (and failure) of dielectric insulators experiencing extreme electric fields is critical to the operation of present and emerging electrical and electronic devices. Despite its importance, the development of a predictive theory of dielectric breakdown has remained a challenge, owing to the complex multiscale nature of this process. We focus on the intrinsic dielectric breakdown field of insulators—the theoretical limit of breakdown determined purely by the chemistry of the material, i.e., the elements the material is composed of, the atomic-level structure, and the bonding. Starting from a benchmark dataset (generated from laborious first principles computations) of the intrinsicmore » dielectric breakdown field of a variety of model insulators, simple predictive phenomenological models of dielectric breakdown are distilled using advanced statistical or machine learning schemes, revealing key correlations and analytical relationships between the breakdown field and easily accessible material properties. Lastly, the models are shown to be general, and can hence guide the screening and systematic identification of high electric field tolerant materials.« less

Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Joishi, Chandan; Xia, Zhanbo; Brenner, Mark; Lodha, Saurabh; Rajan, Siddharth

2018-06-01

In this work, we demonstrate modulation-doped β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors. The maximum sheet carrier density for a two-dimensional electron gas (2DEG) in a β-(AlxGa1-x)2O3/Ga2O3 heterostructure is limited by the conduction band offset and parasitic channel formation in the barrier layer. We demonstrate a double heterostructure to realize a β-(AlxGa1-x)2O3/Ga2O3/(AlxGa1-x)2O3 quantum well, where electrons can be transferred from below and above the β-Ga2O3 quantum well. The confined 2DEG charge density of 3.85 × 1012 cm-2 was estimated from the low-temperature Hall measurement, which is higher than that achievable in a single heterostructure. Hall mobilities of 1775 cm2/V.s at 40 K and 123 cm2/V.s at room temperature were measured. Modulation-doped double heterostructure field effect transistors showed a maximum drain current of IDS = 257 mA/mm, a peak transconductance (gm) of 39 mS/mm, and a pinch-off voltage of -7.0 V at room temperature. The three-terminal off-state breakdown measurement on the device with a gate-drain spacing (LGD) of 1.55 μm showed a breakdown voltage of 428 V, corresponding to an average breakdown field of 2.8 MV/cm. The breakdown measurement on the device with a scaled gate-drain spacing of 196 nm indicated an average breakdown field of 3.2 MV/cm. The demonstrated modulation-doped β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistor could act as a promising candidate for high power and high frequency device applications.

RF design for the TOPGUN photogun: A cryogenic normal conducting copper electron gun

DOE PAGES

Cahill, A. D.; Fukasawa, A.; Pakter, R.; ...

2016-08-31

Some recent studies of rf breakdown physics in cryogenic copper X-band accelerating structures have shown a dramatic increase in the operating gradient while maintaining low breakdown rates. The TOPGUN project, a collaboration between UCLA, SLAC, and INFN, will use this improvement in gradient to create an ultra-high brightness cryogenic normal conducting photoinjector [16]. The brightness is expected to be higher by a factor of 25 relative to the LCLS photogun [9]. This improvement in the brightness will lead to increased performance of X-Ray free electron lasers (FELs) and ultrafast electron diffraction devices [16]. Here, we present the rf design formore » this S-band photogun, which will be a drop-in replacement for the current LCLS photogun.« less

DAWN Mission Bus and Waveguide Venting Analysis Review

NASA Technical Reports Server (NTRS)

Cragg, Clinton H.; Kichak, Robert A.; Sutter, James K.; Holder, Donald; Jeng, Frank; Ruitberg, Arthur; Sank, Victor

2007-01-01

A concern was raised regarding the time after launch when the DAWN Mission Communications Subsystem, which contains a 100 Watt X-Band Traveling Wave Tube Amplifier (TWTA) with a high voltage ((approximately 7 Kilo Volt (KV)) Electronic Power Converter (EPC), will be powered on for the first post-launch downlink. This activation is planned to be approximately one hour after launch. Orbital Sciences (the DAWN Mission spacecraft contractor) typically requires a 24-hour wait period prior to high voltage initiation for Earth-orbiting Science and GEO spacecraft. The concern relates to the issue of corona and/or radio frequency (RF) breakdown of the TWTA ((high voltage direct current (DC) and RF)), and of the microwave components (high voltage RF) in the presence of partial atmospheric pressures or outgassing constituents. In particular, generally the diplexer and circulator are susceptible to RF breakdown in the corona region due to the presence of small physical gaps (( 2.5 millimeter (mm)) between conductors that carry an RF voltage. The NESC concurred the DAWN Mission communication system is safe for activation.

Interfacially Optimized, High Energy Density Nanoparticle-Polymer Composites for Capacitive Energy Storage

NASA Astrophysics Data System (ADS)

Shipman, Joshua; Riggs, Brian; Luo, Sijun; Adireddy, Shiva; Chrisey, Douglas

Energy storage is a green energy technology, however it must be cost effective and scalable to meet future energy demands. Polymer-nanoparticle composites are low cost and potentially offer high energy storage. This is based on the high breakdown strength of polymers and the high dielectric constant of ceramic nanoparticles, but the incoherent nature of the interface between the two components prevents the realization of their combined full potential. We have created inkjet printable nanoparticle-polymer composites that have mitigated many of these interface effects, guided by first principle modelling of the interface. We detail density functional theory modelling of the interface and how it has guided our use in in specific surface functionalizations and other inorganic layers. We have validated our approach by using finite element analysis of the interface. By choosing the correct surface functionalization we are able to create dipole traps which further increase the breakdown strength of our composites. Our nano-scale understanding has allowed us to create the highest energy density composites currently available (>40 J/cm3).

Investigation of breakdown processes in automotive HID lamps

NASA Astrophysics Data System (ADS)

Bergner, Andre; Hoebing, Thomas; Ruhrmann, Cornelia; Mentel, Juergen; Awakowicz, Peter

2011-10-01

HID lamps are used for applications where high lumen output levels are required. Car headlights are a special field of HID lamp application. For security reasons and lawful regulations these lamps have to have a fast run-up phase and the possibility of hot re-strike. Therefore the background gas pressure amounts to 1.5 MPa xenon. But this high background gas pressure has the disadvantage that the ignition voltage becomes quite high due to Paschen's law. For that reason this paper deals with the investigation of the breakdown process of HID lamps for automotive application. The ignition is investigated by electrical as well as optical methods. Ignition voltage and current are measured on a nanosecond time scale and correlated with simultaneous phase resolved high speed photography done by an ICCD camera. So the ignition process can be observed from the first light emission until to the formation of whole discharge channel. The authors gratefully acknowledge the financial support by BMBF within the European project 'SEEL - Solutions for Energy Efficient Lighting' (FKZ: 13N11265). Furthermore the author would like to thank Philips Lighting (Aachen) for valuable discussions.

A new high-κ Al2O3 based metal-insulator-metal antifuse

NASA Astrophysics Data System (ADS)

Tian, Min; Zhong, Huicai; Li, Li; Wang, Zhigang

2018-06-01

In this paper, a new metal-insulator-metal (MIM) antifuse was fabricated with the high κ Al2O3 deposited by atomic layer deposition (ALD) as the dielectric. On this high κ antifuse structure, the very low on-state resistance was obtained under certain programming conditions. It is the first time that the antifuse on-state resistance has been found decreasing along with the increase of dielectric film thickness, which is attributed to a large current overshoot during breakdown. For the device with a dielectric thickness of 12 nm, very large overshoot current (∼60 mA) was observed and extremely low on-state resistance (∼10 Ω) was achieved.

Time-Domain Full-Wave Modeling of Nonlinear Air Breakdown in High-Power Microwave Devices and Systems

DTIC Science & Technology

2017-09-30

AFRL-RD-PS- AFRL-RD-PS- TR-2017-0047 TR-2017-0047 TIME -DOMAIN FULL-WAVE MODELING OF NONLINEAR AIR BREAKDOWN IN HIGH-POWER MICROWAVE...Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions...TITLE AND SUBTITLE Time -Domain Full-Wave Modeling of Nonlinear Air Breakdown in High-Power Microwave Devices and Systems 5a. CONTRACT NUMBER 5b

Simulation design of high reverse blocking high-K/low-K compound passivation AlGaN/GaN Schottky barrier diode with gated edge termination

NASA Astrophysics Data System (ADS)

Bai, Zhiyuan; Du, Jiangfeng; Xin, Qi; Li, Ruonan; Yu, Qi

2017-11-01

In this paper, a novel high-K/low-K compound passivation AlGaN/GaN Schottky Barrier Diode (CPG-SBD) is proposed to improve the off-state characteristics of AlGaN/GaN schottky barrier diode with gated edge termination (GET-SBD) by adding low-K blocks in to the high-K passivation layer. The reverse leakage current of CPG-SBD can be reduced to 1.6 nA/mm by reducing the thickness of high-K dielectric under GET region to 5 nm, while the forward voltage and on-state resistance keep 1 V and 3.8 Ω mm, respectively. Breakdown voltage of CPG-SBDs can be improved by inducing discontinuity of the electric field at the high-K/low-K interface. The breakdown voltage of the optimized CPG-SBD with 4 blocks of low-K can reach 1084 V with anode to cathode distance of 5 μm yielding a high FOM of 5.9 GW/cm2. From the C-V simulation results, CPG-SBDs induce no parasitic capacitance by comparison of the GET-SBDs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samant, Saumil P.; Grabowski, Christopher A.; Kisslinger, Kim

Emerging needs for fast charge/discharge yet high-power, lightweight, and flexible electronics requires the use of polymer-film-based solid-state capacitors with high energy densities. Fast charge/discharge rates of film capacitors on the order of microseconds are not achievable with slower charging conventional batteries, supercapacitors and related hybrid technologies. However, the current energy densities of polymer film capacitors fall short of rising demand, and could be significantly enhanced by increasing the breakdown strength (E BD) and dielectric permittivity (ε r) of the polymer films. Co-extruded two-homopolymer component multilayered films have demonstrated much promise in this regard showing higher E BD over that ofmore » component polymers. Multilayered films can also help incorporate functional features besides energy storage, such as enhanced optical, mechanical, thermal and barrier properties. In this work, we report accomplishing multilayer, multicomponent block copolymer dielectric films (BCDF) with soft-shear driven highly oriented self-assembled lamellar diblock copolymers (BCP) as a novel application of this important class of self-assembling materials. Results of a model PS-b-PMMA system show ~50% enhancement in E BD of self-assembled multilayer lamellar BCP films compared to unordered as-cast films, indicating that the breakdown is highly sensitive to the nanostructure of the BCP. The enhancement in E BD is attributed to the “barrier effect”, where the multiple interfaces between the lamellae block components act as barriers to the dielectric breakdown through the film. The increase in E BD corresponds to more than doubling the energy storage capacity using a straightforward directed self-assembly strategy. This approach opens a new nanomaterial paradigm for designing high energy density dielectric materials.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samant, Saumil P.; Grabowski, Christopher A.; Kisslinger, Kim

Emerging needs for fast charge/discharge yet high-power, lightweight, and flexible electronics requires the use of polymer-film-based solid-state capacitors with high energy densities. Fast charge/discharge rates of film capacitors on the order of microseconds are not achievable with slower charging conventional batteries, supercapacitors and related hybrid technologies. However, the current energy densities of polymer film capacitors fall short of rising demand, and could be significantly enhanced by increasing the breakdown strength (E BD) and dielectric permittivity (ε r) of the polymer films. Co-extruded two-homopolymer component multilayered films have demonstrated much promise in this regard showing higher E BD over that ofmore » component polymers. Multilayered films can also help incorporate functional features besides energy storage, such as enhanced optical, mechanical, thermal and barrier properties. In this work, we report accomplishing multilayer, multicomponent block copolymer dielectric films (BCDF) with soft-shear driven highly oriented self-assembled lamellar diblock copolymers (BCP) as a novel application of this important class of self-assembling materials. Results of a model PS- b-PMMA system show ~50% enhancement in E BD of self-assembled multilayer lamellar BCP films compared to unordered as-cast films, indicating that the breakdown is highly sensitive to the nanostructure of the BCP. The enhancement in E BD is attributed to the “barrier effect”, where the multiple interfaces between the lamellae block components act as barriers to the dielectric breakdown through the film. The increase in E BD corresponds to more than doubling the energy storage capacity using a straightforward directed self-assembly strategy. Lastly, this approach opens a new nanomaterial paradigm for designing high energy density dielectric materials.« less

Design and Varactors: Operational Considerations. A Reliability Study for Robust Planar GaAs

NASA Technical Reports Server (NTRS)

Maiwald, Frank; Schlecht, Erich; Ward, John; Lin, Robert; Leon, Rosa; Pearson, John; Mehdi, Imran

2003-01-01

Preliminary conclusions include: Limits for reverse currents cannot be set. Based on current data we want to avoid any reverse bias current. We know 1 micro-A is too high. Leakage current gets suppressed when operated at 120K. Migration and verification: a) Reverse Bias Voltage will be limited; b) Health check with I/V curve: 1) Minimal reverse voltage shall be x0.75 of the calculated voltage breakdown Vbr; 2) Degradation of the Reverse Bias voltage at given current will be used as indication of ESD incidents or other Damages (high RF power, heat); 3) Calculation of diodes parameter to verify initial health check result in forward direction. RF output power starts to degrade when diode I/V curve is very strongly degraded only. Experienced on 400GHz doubler and 200GHz doubler

Gyrotropic Zener tunneling and nonlinear IV curves in the zero-energy Landau level of graphene in a strong magnetic field.

PubMed

Laitinen, Antti; Kumar, Manohar; Hakonen, Pertti; Sonin, Edouard

2018-01-12

We have investigated tunneling current through a suspended graphene Corbino disk in high magnetic fields at the Dirac point, i.e. at filling factor ν = 0. At the onset of the dielectric breakdown the current through the disk grows exponentially before ohmic behaviour, but in a manner distinct from thermal activation. We find that Zener tunneling between Landau sublevels dominates, facilitated by tilting of the source-drain bias potential. According to our analytic modelling, the Zener tunneling is strongly affected by the gyrotropic force (Lorentz force) due to the high magnetic field.

An “ohmic-first” self-terminating gate-recess technique for normally-off Al2O3/GaN MOSFET

NASA Astrophysics Data System (ADS)

Wang, Hongyue; Wang, Jinyan; Li, Mengjun; He, Yandong; Wang, Maojun; Yu, Min; Wu, Wengang; Zhou, Yang; Dai, Gang

2018-04-01

In this article, an ohmic-first AlGaN/GaN self-terminating gate-recess etching technique was demonstrated where ohmic contact formation is ahead of gate-recess-etching/gate-dielectric-deposition (GRE/GDD) process. The ohmic contact exhibits few degradations after the self-terminating gate-recess process. Besides, when comparing with that using the conventional fabrication process, the fabricated device using the ohmic-first fabrication process shows a better gate dielectric quality in terms of more than 3 orders lower forward gate leakage current, more than twice higher reverse breakdown voltage as well as better stability. Based on this proposed technique, the normally-off Al2O3/GaN MOSFET exhibits a threshold voltage (V th) of ˜1.8 V, a maximum drain current of ˜328 mA/mm, a forward gate leakage current of ˜10-6 A/mm and an off-state breakdown voltage of 218 V at room temperature. Meanwhile, high temperature characteristics of the device was also evaluated and small variations (˜7.6%) of the threshold voltage was confirmed up to 300 °C.

Kinetic simulations of gas breakdown in the dense plasma focus

NASA Astrophysics Data System (ADS)

Bennett, N.; Blasco, M.; Breeding, K.; DiPuccio, V.; Gall, B.; Garcia, M.; Gardner, S.; Gatling, J.; Hagen, E. C.; Luttman, A.; Meehan, B. T.; Molnar, S.; O'Brien, R.; Ormond, E.; Robbins, L.; Savage, M.; Sipe, N.; Welch, D. R.

2017-06-01

The first fully kinetic, collisional, and electromagnetic simulations of the breakdown phase of a MA-scale dense plasma focus are described and shown to agree with measured electrical characteristics, including breakdown time. In the model, avalanche ionization is driven by cathode electron emission, and this results in incomplete gas breakdown along the insulator. This reinforces the importance of the conditioning process that creates a metallic layer on the insulator surface. The simulations, nonetheless, help explain the relationship between the gas pressure, the insulator length, and the coaxial gap width. Previously, researchers noted three breakdown patterns related to pressure. Simulation and analytical results show that at low pressures, long ionization path lengths lead to volumetric breakdown, while high pressures lead to breakdown across the relatively small coaxial electrode gap. In an intermediate pressure regime, ionization path lengths are comparable to the insulator length which promotes ideal breakdown along the insulator surface.

Effect of temperature on the electric breakdown strength of dielectric elastomer

NASA Astrophysics Data System (ADS)

Liu, Lei; Chen, Hualing; Sheng, Junjie; Zhang, Junshi; Wang, Yongquan; Jia, Shuhai

2014-03-01

DE (dielectric elastomer) is one of the most promising artificial muscle materials for its large strain over 100% under driving voltage. However, to date, dielectric elastomer actuators (DEAs) are prone to failure due to the temperature-dependent electric breakdown. Previously studies had shown that the electrical breakdown strength was mainly related to the temperature-dependent elasticity modulus and the permittivity of dielectric substances. This paper investigated the influence of ambient temperature on the electric breakdown strength of DE membranes (VHB4910 3M). The electric breakdown experiment of the DE membrane was conducted at different ambient temperatures and pre-stretch levels. The real breakdown strength was obtained by measuring the deformation and the breakdown voltage simultaneously. Then, we found that with the increase of the environment temperature, the electric breakdown strength decreased obviously. Contrarily, the high pre-stretch level led to the large electric breakdown strength. What is more, we found that the deformations of DEs were strongly dependent on the ambient temperature.

Fast shut-down protection system for radio frequency breakdown and multipactor testing.

PubMed

Graves, T P; Hanson, P; Michaelson, J M; Farkas, A D; Hubble, A A

2014-02-01

Radio frequency (RF) breakdown such as multipactor or ionization breakdown is a device-limiting phenomenon for on-orbit spacecraft used for communication, navigation, or other RF payloads. Ground testing is therefore part of the qualification process for all high power components used in these space systems. This paper illustrates a shut-down protection system to be incorporated into multipactor/ionization breakdown ground testing for susceptible RF devices. This 8 channel system allows simultaneous use of different diagnostic classes and different noise floors. With initiation of a breakdown event, diagnostic signals increase above a user-specified level, which then opens an RF switch to eliminate RF power from the high power amplifier. Examples of this system in use are shown for a typical setup, illustrating the reproducibility of breakdown threshold voltages and the lack of multipactor conditioning. This system can also be utilized to prevent excessive damage to RF components in tests with sensitive or flight hardware.

Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

NASA Astrophysics Data System (ADS)

Son, Dong-Hyeok; Jo, Young-Woo; Won, Chul-Ho; Lee, Jun-Hyeok; Seo, Jae Hwa; Lee, Sang-Heung; Lim, Jong-Won; Kim, Ji Heon; Kang, In Man; Cristoloveanu, Sorin; Lee, Jung-Hee

2018-03-01

Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ∼20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ∼800 V with off-state leakage current as low as ∼10-12 A and high on/off current ratio (Ion/Ioff) of 1010. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.

Torus Breakdown and Homoclinic Chaos in a Glow Discharge Tube

NASA Astrophysics Data System (ADS)

Ginoux, Jean-Marc; Meucci, Riccardo; Euzzor, Stefano

2017-12-01

Starting from historical researches, we used, like Van der Pol and Le Corbeiller, a cubic function for modeling the current-voltage characteristic of a direct current low-pressure plasma discharge tube, i.e. a neon tube. This led us to propose a new four-dimensional autonomous dynamical system allowing to describe the experimentally observed phenomenon. Then, mathematical analysis and detailed numerical investigations of such a fourth-order torus circuit enabled to highlight bifurcation routes from torus breakdown to homoclinic chaos following the Newhouse-Ruelle-Takens scenario.

Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV

NASA Astrophysics Data System (ADS)

Hayashida, Tetsuro; Nanjo, Takuma; Furukawa, Akihiko; Yamamuka, Mikio

2017-06-01

In this study, we successfully fabricated vertical GaN merged PiN Schottky (MPS) diodes and comparatively investigated the cyclic p-GaN width (W p) dependence of their electrical characteristics, including turn-on voltage and reverse leakage current. The MPS diodes with W p of more than 6 µm can turn on at around 3 V. Increasing W p can suppress the reverse leakage current. Moreover, the vertical GaN MPS diode with the breakdown voltage of 2 kV was realized for the first time.

Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Armstrong, Andrew M.; Aubry, Sylvie; Shaner, Eric Arthur

2010-09-01

We present the results of a three year LDRD project that focused on understanding the impact of defects on the electrical, optical and thermal properties of GaN-based nanowires (NWs). We describe the development and application of a host of experimental techniques to quantify and understand the physics of defects and thermal transport in GaN NWs. We also present the development of analytical models and computational studies of thermal conductivity in GaN NWs. Finally, we present an atomistic model for GaN NW electrical breakdown supported with experimental evidence. GaN-based nanowires are attractive for applications requiring compact, high-current density devices such asmore » ultraviolet laser arrays. Understanding GaN nanowire failure at high-current density is crucial to developing nanowire (NW) devices. Nanowire device failure is likely more complex than thin film due to the prominence of surface effects and enhanced interaction among point defects. Understanding the impact of surfaces and point defects on nanowire thermal and electrical transport is the first step toward rational control and mitigation of device failure mechanisms. However, investigating defects in GaN NWs is extremely challenging because conventional defect spectroscopy techniques are unsuitable for wide-bandgap nanostructures. To understand NW breakdown, the influence of pre-existing and emergent defects during high current stress on NW properties will be investigated. Acute sensitivity of NW thermal conductivity to point-defect density is expected due to the lack of threading dislocation (TD) gettering sites, and enhanced phonon-surface scattering further inhibits thermal transport. Excess defect creation during Joule heating could further degrade thermal conductivity, producing a viscous cycle culminating in catastrophic breakdown. To investigate these issues, a unique combination of electron microscopy, scanning luminescence and photoconductivity implemented at the nanoscale will be used in concert with sophisticated molecular-dynamics calculations of surface and defect-mediated NW thermal transport. This proposal seeks to elucidate long standing material science questions for GaN while addressing issues critical to realizing reliable GaN NW devices.« less

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Optoelectronic switching in diamond and optical surface breakdown

NASA Astrophysics Data System (ADS)

Lipatov, E. I.; Tarasenko, V. F.

2008-03-01

The optoelectronic switching in two natural diamond samples of type 2-A is studied at voltages up to 1000 V and the energy density of control 60-ns, 308-nm laser pulses up to 0.6 J cm-2. It is shown that the design of a diamond switch affects the switching efficiency. When the energy density exceeds 0.2 J cm-2 and the interelectrode surface is completely illuminated, the surface breakdown is initiated by UV radiation, which shunts the current flow through the diamond crystal. When the illumination of the interelectrode surface is excluded, the surface breakdown does not occur. The threshold radiation densities sufficient for initiating the surface breakdown are determined for electric field strengths up to 10 kV cm-1.

Center conductor diagnostic for multipactor detection in inaccessible geometries

NASA Astrophysics Data System (ADS)

Chaplin, Vernon H.; Hubble, Aimee A.; Clements, Kathryn A.; Graves, Timothy P.

2017-01-01

Electron collecting current probes are the most reliable diagnostic of multipactor and radiofrequency (RF) ionization breakdown; however, stand-alone probes can only be used in test setups where the breakdown region is physically accessible. This paper describes techniques for measuring multipactor current directly on the center conductor of a coaxial RF device (or more generally, on the signal line in any two-conductor RF system) enabling global multipactor detection with improved sensitivity compared to other common diagnostics such as phase null, third harmonic, and reflected power. The center conductor diagnostic may be AC coupled for use in systems with a low DC impedance between the center conductor and ground. The effect of DC bias on the breakdown threshold was studied: in coaxial geometry, the change in threshold was <1 dB for positive biases satisfying VD C/VR F 0 <0.8 , where VRF0 is the RF voltage amplitude at the unperturbed breakdown threshold. In parallel plate geometry, setting VD C/VR F 0 <0.2 was necessary to avoid altering the threshold by more than 1 dB. In most cases, the center conductor diagnostic functions effectively with no bias at all—this is the preferred implementation, but biases in the range VD C=0 -10 V may be applied if necessary. The polarity of the detected current signal may be positive or negative depending on whether there is net electron collection or emission globally.

Center conductor diagnostic for multipactor detection in inaccessible geometries.

PubMed

Chaplin, Vernon H; Hubble, Aimee A; Clements, Kathryn A; Graves, Timothy P

2017-01-01

Electron collecting current probes are the most reliable diagnostic of multipactor and radiofrequency (RF) ionization breakdown; however, stand-alone probes can only be used in test setups where the breakdown region is physically accessible. This paper describes techniques for measuring multipactor current directly on the center conductor of a coaxial RF device (or more generally, on the signal line in any two-conductor RF system) enabling global multipactor detection with improved sensitivity compared to other common diagnostics such as phase null, third harmonic, and reflected power. The center conductor diagnostic may be AC coupled for use in systems with a low DC impedance between the center conductor and ground. The effect of DC bias on the breakdown threshold was studied: in coaxial geometry, the change in threshold was <1 dB for positive biases satisfying V DC /V RF0 <0.8, where V RF0 is the RF voltage amplitude at the unperturbed breakdown threshold. In parallel plate geometry, setting V DC /V RF0 <0.2 was necessary to avoid altering the threshold by more than 1 dB. In most cases, the center conductor diagnostic functions effectively with no bias at all-this is the preferred implementation, but biases in the range V DC =0-10V may be applied if necessary. The polarity of the detected current signal may be positive or negative depending on whether there is net electron collection or emission globally.

Application field and ways to control alternating-current plasma torch with rail electrodes

NASA Astrophysics Data System (ADS)

Kuznetsov, V. E.; Safronov, A. A.; Vasilieva, O. B.; Shiryaev, V. N.; Dudnik, Yu D.; Pavlov, A. V.; Kuchina, Yu A.

2018-01-01

The paper deals with the investigation of parameters of the high voltage alternating-current plasma torch with rail electrodes. Usage of the injector and its variation allows controlling of operation of the ac plasma torch with rail electrodes. Also the possibility to protect the electric arc chamber without protective gas has been studied. It was found that increasing in the injector power causes the repeated breakdown at lower voltage and hence the arc dimensions decreases. The results of experiments are presented in the paper.

Characteristic features of the magnetoresistance in the ferrimagnetic (Sr2FeMoO6-δ) - dielectric (SrMoO4) nanocomposite

NASA Astrophysics Data System (ADS)

Demyanov, S.; Kalanda, N.; Yarmolich, M.; Petrov, A.; Lee, S.-H.; Yu, S.-C.; Oh, S. K.; Kim, D.-H.

2018-05-01

Magnetic metal-oxide compounds with high values of magnetoresistance (MR) have attracted huge interest for spintronic applications, among which Sr2FeMoO6-δ (SFMO) has been relatively less known compared to the cobaltites and manganites, despite 100% electrons spin-polarization degree and a high Curie temperature. Here, stable fabrication and systematic analysis of nanocomposites based on SFMO with SrMoO4 dielectric sheaths are presented. SFMO-SrMoO4 nanocomposites were fabricated as follows: synthesis of the SFMO single-phase nanopowders by the modified citrate-gel technique; compaction under high pressure; thermal treatment for sheaths formation around grains. The nanocomposite is observed to exhibit a transitional behavior of conductivity from metallic, which is characteristic for the SFMO to semiconductor one in the temperature range 4 - 300K under magnetic fields up to 10T. A negative MR is observed due to the spin-polarized charge carriers tunneling through dielectric sheaths. MR value reaches 43% under 8T at 10κ. The dielectric sheaths thickness was determined to be about 10 nm by electric breakdown voltage value at current-voltage characteristics curves. The breakdown is found to be a reversible process determined by collisional ionization of dielectric atoms in strong electric field depending on knocked-out electrons from the SrMoO4. It was found that MR changes sign in electric breakdown region, revealing the giant magnetoresistive properties.

Dynamic and interaction of fs-laser induced cavitation bubbles for analyzing the cutting effect

NASA Astrophysics Data System (ADS)

Tinne, N.; Schumacher, S.; Nuzzo, V.; Ripken, T.; Lubatschowski, H.

2009-07-01

A prominent laser based treatment in ophthalmology is the LASIK procedure which nowadays includes a cutting of the corneal tissue based on ultra short pulses. Focusing an ultra short laser pulse below the surface of biological tissue an optical breakdown is caused and hence a dissection is obtained. The laser energy of the laser pulses is absorbed by nonlinear processes. As a result a cavitation bubble expands and ruptures the tissue. Hence positioning of several optical breakdowns side by side generates an incision. Due to a reduction of the duration of the treatment the current development of ultra short laser systems points to higher repetition rates in the range of hundreds of KHz or even MHz instead of tens of kHz. This in turn results in a probable occurrence of interaction between different optical breakdowns and respectively cavitation bubbles of adjacent optical breakdowns. While the interaction of one single laser pulse with biological tissue is analyzed reasonably well experimentally and theoretically, the interaction of several spatial and temporal following pulses is scarcely determined yet. Thus the aim of this study is to analyse the dynamic and interaction of two cavitation bubbles by using high speed photography. The applied laser pulse energy, the energy ratio and the spot distance between different cavitation bubbles were varied. Depending on a change of these parameters different kinds of interactions such as a flattening and deformation of bubble shape or jet formation are observed. Based on these results a further research seems to be inevitable to comprehend and optimize the cutting effect of ultra short pulse laser systems with high (> 1 MHz) repetition rates.

Tryptophan pathway alterations in the postpartum period and in acute postpartum psychosis and depression.

PubMed

Veen, Cato; Myint, Aye Mu; Burgerhout, Karin M; Schwarz, Markus J; Schütze, Gregor; Kushner, Steven A; Hoogendijk, Witte J; Drexhage, Hemmo A; Bergink, Veerle

2016-01-01

Women are at very high risk for the first onset of acute and severe mood disorders the first weeks after delivery. Tryptophan breakdown is increased as a physiological phenomenon of the postpartum period and might lead to vulnerability for affective psychosis (PP) and severe depression (PD). The aim of the current study was to investigate alterations in tryptophan breakdown in the physiological postpartum period compared to patients with severe postpartum mood disorders. We included 52 patients (29 with PP, 23 with PD), 52 matched healthy postpartum women and 29 healthy non-postpartum women. Analyzes of serum tryptophan metabolites were performed using LC-MS/MS system for tryptophan, kynurenine, 3-hydroxykynurenine, kynurenic acid and 5-hydroxyindoleacetic acid. The first two months of the physiological postpartum period were characterized by low tryptophan levels, increased breakdown towards kynurenine and a downstream shift toward the 3-OH-kynurenine arm, away from the kynurenic acid arm. Kynurenine was significantly lower in patients with PP and PD as compared to healthy postpartum women (p=0.011 and p=0.001); the remaining tryptophan metabolites demonstrated few differences between patients and healthy postpartum women. Low prevalence of the investigated disorders and strict exclusion criteria to obtain homogenous groups, resulted in relatively small sample sizes. The high kynurenine levels and increased tryptophan breakdown as a phenomenon of the physiological postpartum period was not present in patients with severe postpartum mood disorders. No differences were observed in the levels of the 'neurotoxic' 3-OH-kynurenine and the 'neuroprotective' kynurenic acid arms between patients and healthy postpartum women. Copyright © 2015 Elsevier B.V. All rights reserved.

Dielectric breakdown strength of magnetic nanofluid based on insulation oil after impulse test

NASA Astrophysics Data System (ADS)

Nazari, M.; Rasoulifard, M. H.; Hosseini, H.

2016-02-01

In this study, the dielectric breakdown strength of magnetic nanofluids based on transformer mineral oil for use in power systems is reviewed. Nano oil samples are obtained from dispersion of the magnetic nanofluid within uninhibited transformer mineral oil NYTRO LIBRA as the base fluid. AC dielectric breakdown voltage measurement was carried out according to IEC 60156 standard and the lightning impulse breakdown voltage was obtained by using the sphere-sphere electrodes in an experimental setup for nano oil in volume concentration of 0.1-0.6%. Results indicate improved AC and lightning impulse breakdown voltage of nano oil compared to the base oil. AC test was performed again after applying impulse current and result showed that nano oil unlike the base oil retains its dielectric properties. Increase the dielectric strength of the nano oil is mainly due to dielectric and magnetic properties of Fe3O4 nanoparticles that act as free electrons snapper, and reduce the rate of free electrons in the ionization process.

MICROBIAL COLONIZATION, RESPIRATION, AND BREAKDOWN OF MAPLE LEAVES ALONG A STREAM-MARSH CONTINUUM

EPA Science Inventory

Breakdown rates, macroinvertebrate and bacterial colonization, and microbial respiration were measured on decaying maple (Acer saccharum) leaves at three sites along a stream-marsh continuum. Breakdown rates (-k+-SE) were 0.0284+-0.0045 d-1 for leaves in a high-gradient, non-tida...

MICROBIAL COLONIZATION, RESPIRATION AND BREAKDOWN OF MAPLE LEAVES ALONG A STREAM-MARSH CONTINUUM

EPA Science Inventory

Breakdown rates, macroinvertebrate and bacterial colonization, and microbial respiration were measured on decaying maple leaves at three sites along a stream-marsh continuum. Breakdown rates were 0.0284+/-0.0045 d-1 for leaves in a high-gradient, non-tidal stream; 0.0112 +/- 0.0...

Application of a compact diode pumped solid-state laser source for quantitative laser-induced breakdown spectroscopy analysis of steel

NASA Astrophysics Data System (ADS)

Tortschanoff, Andreas; Baumgart, Marcus; Kroupa, Gerhard

2017-12-01

Laser-induced breakdown spectroscopy (LIBS) technology holds the potential for onsite real-time measurements of steel products. However, for a mobile and robust LIBS measurement system, an adequate small and ruggedized laser source is a key requirement. In this contribution, we present tests with our compact high-power laser source, which, initially, was developed for ignition applications. The CTR HiPoLas® laser is a robust diode pumped solid-state laser with a passive Q-switch with dimensions of less than 10 cm3. The laser generates 2.5-ns pulses with 30 mJ at a maximum continuous repetition rate of about 30 Hz. Feasibility of LIBS experiments with the laser source was experimentally verified with steel samples. The results show that the laser with its current optical output parameters is very well-suited for LIBS measurements. We believe that the miniaturized laser presented here will enable very compact and robust portable high-performance LIBS systems.

Fundamentals of undervoltage breakdown through the Townsend mechanism

NASA Astrophysics Data System (ADS)

Cooley, James E.

The conditions under which an externally supplied pulse of electrons will induce breakdown in an undervoltaged, low-gain, DC discharge gap are experimentally and theoretically explored. The phenomenon is relevant to fundamental understanding of breakdown physics, to switching applications such as triggered spark gaps and discharge initiation in pulsed-plasma thrusters, and to gas-avalanche particle counters. A dimensionless theoretical description of the phenomenon is formulated and solved numerically. It is found that a significant fraction of the charge on the plates must be injected for breakdown to be achieved at low avalanche-ionization gain, when an electron undergoes fewer than approximately 10 ionizing collisions during one gap transit. It is also found that fewer injected electrons are required as the gain due to electron-impact ionization (alpha process) is increased, or as the sensitivity of the alpha process to electric field is enhanced by decreasing the reduced electric field (electric field divided by pressure, E/p). A predicted insensitivity to ion mobility implies that breakdown is determined during the first electron avalanche when space charge distortion is greatest. A dimensionless, theoretical study of the development of this avalanche reveals a critical value of the reduced electric field to be the value at the Paschen curve minimum divided by 1.6. Below this value, the net result of the electric field distortion is to increase ionization for subsequent avalanches, making undervoltage breakdown possible. Above this value, ionization for subsequent avalanches will be suppressed and undervoltage breakdown is not possible. Using an experimental apparatus in which ultraviolet laser pulses are directed onto a photo-emissive cathode of a parallel-plate discharge gap, it is found that undervoltage breakdown can occur through a Townsend-like mechanism through the buildup of successively larger avalanche generations. The minimum number of injected electrons required to achieve breakdown is measured in argon at pd values of 3-10 Torr-m. The required electron pulse magnitude was found to scale inversely with pressure and voltage in this parameter range. When higher-power infrared laser pulses were used to heat the cathode surface, a faster, streamer-like breakdown mechanism was occasionally observed. As an example application, an investigation into the requirements for initiating discharges in Gas-fed Pulsed Plasma Thrusters (GFPPTs) is conducted. Theoretical investigations based on order-of-magnitude characterizations of previous GFPPT designs reveal that high-conductivity arc discharges are required for critically-damped matching of circuit components, and that relatively fast streamer breakdown is preferable to minimize delay between triggering and current sheet formation. The faster breakdown mechanism observed in the experiments demonstrates that such a discharge process can occur. However, in the parameter space occupied by most thrusters, achieving the phenomenon by way of a space charge distortion caused purely by an electron pulse should not be possible. Either a transient change in the distribution of gas density, through ablation or desorption, or a thruster design that occupies a different parameter space, such as one that uses higher mass bits, higher voltages, or smaller electrode spacing, is required for undervoltage breakdown to occur.

Energy storage in ferroelectric polymer nanocomposites filled with core-shell structured polymer@BaTiO3 nanoparticles: understanding the role of polymer shells in the interfacial regions.

PubMed

Zhu, Ming; Huang, Xingyi; Yang, Ke; Zhai, Xing; Zhang, Jun; He, Jinliang; Jiang, Pingkai

2014-11-26

The interfacial region plays a critical role in determining the electrical properties and energy storage density of dielectric polymer nanocomposites. However, we still know a little about the effects of electrical properties of the interfacial regions on the electrical properties and energy storage of dielectric polymer nanocomposites. In this work, three types of core-shell structured polymer@BaTiO3 nanoparticles with polymer shells having different electrical properties were used as fillers to prepare ferroelectric polymer nanocomposites. All the polymer@BaTiO3 nanoparticles were prepared by surface-initiated reversible-addition-fragmentation chain transfer (RAFT) polymerization, and the polymer shells were controlled to have the same thickness. The morphology, crystal structure, frequency-dependent dielectric properties, breakdown strength, leakage currents, energy storage capability, and energy storage efficiency of the polymer nanocomposites were investigated. On the other hand, the pure polymers having the same molecular structure as the shells of polymer@BaTiO3 nanoparticles were also prepared by RAFT polymerization, and their electrical properties were provided. Our results show that, to achieve nanocomposites with high discharged energy density, the core-shell nanoparticle filler should simultaneously have high dielectric constant and low electrical conductivity. On the other hand, the breakdown strength of the polymer@BaTiO3-based nanocomposites is highly affected by the electrical properties of the polymer shells. It is believed that the electrical conductivity of the polymer shells should be as low as possible to achieve nanocomposites with high breakdown strength.

Study of DC Circuit Breaker of H2-N2 Mixture Gas for High Voltage

NASA Astrophysics Data System (ADS)

Shiba, Yuji; Morishita, Yukinaga; Kaneko, Shuhei; Okabe, Shigemitsu; Mizoguchi, Hitoshi; Yanabu, Satoru

Global warming caused by CO2 etc. is a field where the concern is very high. Especially, automobile emissions are problem for it. Therefore, the hybrid car is widely development and used recently. Hybrid car used electric power and gasoline. So, the car reduces CO2. Hybrid car has engine and motor. To rotate the motor, hybrid car has battery. This battery is large capacity. Therefore, the relay should interrupt high DC current for the switch of the motor and the engine. So, hybrid car used hydrogen gas filling relay We studied interruption test for the research of a basic characteristic of hydrogen gas. DC current has not current zero point. So, it is necessary to make the current zero by high arc voltage and forcible current zero point. The loss coefficient and arc voltage of hydrogen is high. Therefore, we studied interruption test for used high arc voltage. We studied interruption test and dielectric breakdown test of air, pure Hydrogen, and Hydrogen- nitrogen mixture gas. As a result, we realized H2-N2(80%-20%) is the best gas.

An analysis of the breakdown of paper products (toilet paper, tissues and tampons) in natural environments, Tasmania, Australia.

PubMed

Bridle, Kerry L; Kirkpatrick, J B

2005-01-01

An examination of the relative breakdown rates of unused toilet paper, facial tissues and tampons was undertaken in nine different environments typical of Tasmanian natural areas. Bags of the paper products (toilet paper, facial tissues, tampons) were buried for periods of 6, 12 and 24 months at depths of 5 and 15 cm. A nutrient solution simulating human body wastes was added to half of the samples, to test the hypothesis that the addition of nutrients would enhance the breakdown of paper products buried in the soil. Mean annual rainfall was the most important measured variable determining mean breakdown in the nutrient addition treatment between sites, with high rainfall sites (mean annual rainfall of greater than 650 mm) recording less decayed products than the drier sites (mean annual rainfall of 500-650 mm). Temperature and soil organic content were important influences on the breakdown of the unfertilised products. Toilet paper and tissues decayed more readily than tampons. Nutrient addition enhanced decay for all products across all sites. Depth of burial was not important in determining the degree to which products decayed. In alpine environments, burial under rocks at the surface did not increase the speed of decay of any product. The Western Alpine site, typical of alpine sites in the Tasmanian Wilderness World Heritage Area, showed very little decay over the two-year period, even for nutrient enhanced products. Management prescriptions should be amended to dissuade people from depositing human toilet waste in the extreme (montane to alpine) environments in western Tasmania. Tampons should continue to be carried out as currently prescribed.

Fast Positive Breakdown, NBEs, and Lightning Initiation

NASA Astrophysics Data System (ADS)

Krehbiel, P. R.; Rison, W.; Stock, M.; Edens, H. E.; Shao, X. M.; Thomas, R. J.; Stanley, M. A.; Zhang, Y.

2016-12-01

High power narrrow bipolar events (NBEs) have been found to be produced by arelatively unknown type of discharge, called fast positive breakdown (Rison etal., 2016). The breakdown occurs with a wide range of strengths, both in terms of its broadband sferic and its VHF radiation, and is found to be theinitiating event of many and likely all lightning discharges inside storms. Itdoes not produce a conducting channel but instead appears to be produced by avolumetric system of repeated, cascading positive streamers in virgin air.That positive corona and streamers would be responsible for initiatinglightning was proposed in the 1960s by Loeb, Dawson and Winn. In the 1970sPhelps and Griffiths showed that the streamers would be self-intensifying,leading to negative breakdown being initiated back at their starting points.Petersen et al. (2008) described experimental results showing that thestreamers could be initiated by ice crystals at cold temperatures, and thephysical processes leading to the breakdown being fast has been reported inrecent modeling studies by Shi et al. (2016). In this paper we summarize the observational data in support of the abovefindings, and report on additional observations of NBEs and lightninginitiation currently being obtained at Kennedy Space Center, Florida. References: Rison W., P.R. Krehbiel M.G.Stock, H.E. Edens, X-M. Shao, R.J. Thomas,M.A. Stanley, Y. Zhang, Observations of narrow bipolar events revealhow lightning is initiated in thunderstorms, Nature Comms. 7, 2016.doi:10.1038/ncomms10721. Petersen, D., Bailey, M., Beasley, W. & Hallett, J. A brief review ofthe problem of lightning initiation and a hypothesis of initiallightning leader formation. J. Geophys. Res. 113, D17205 (2008). Shi, F., N. Liu, and H. K. Rassoul (2016), Properties of relativelylong streamers initiated from an isolated hydrometeor, J. Geophys.Res. Atmos., 121, 7284-7295, doi:10.1002/2015JD024580.

Examining the Use of Internal Defect Information for Information-Augmented Hardwood Log Breakdown

Treesearch

Luis G. Occeña; Daniel L. Schmoldt; Suraphan Thawornwong

1997-01-01

In present-day hardwood sawmills, log breakdown is hampered by incomplete information about log geometry and internal features. When internal log scanning becomes operational, it will remove this roadblock and provide a complete view of each logâs interior. It is not currently obvious, however, how dramatically this increased level of information will improve log...

Novel dielectric reduces corona breakdown in ac capacitors

NASA Technical Reports Server (NTRS)

Loehner, J. L.

1972-01-01

Dielectric system was developed which consists of two layers of 25-gage paper separated by one layer of 50-gage polypropylene to reduce corona breakdown in ac capacitors. System can be used in any alternating current application where constant voltage does not exceed 400 V rms. With a little research it could probably be increased to 700 to 800 V rms.

Safety of High Speed Guided Ground Transportation Systems: Work Breakdown Structure

DOT National Transportation Integrated Search

1994-11-30

This report provides a systems approach to the assessment, evaluation and application of high-speed guided ground transportation (HSGGT) safety criteria and : presents one potential methodology by combining a work breakdown structure (WBS) : approach...

Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Deen, D. A.; Storm, D. F.; Bass, R.; Meyer, D. J.; Katzer, D. S.; Binari, S. C.; Lacis, J. W.; Gougousi, T.

2011-01-01

AlN/GaN heterostructures with a 3.5 nm AlN cap have been grown by molecular beam epitaxy followed by a 6 nm thick atomic layer deposited Ta2O5 film. Transistors fabricated with 150 nm length gates showed drain current density of 1.37 A/mm, transconductance of 315 mS/mm, and sustained drain-source biases up to 96 V while in the off-state before destructive breakdown as a result of the Ta2O5 gate insulator. Terman's method has been modified for the multijunction capacitor and allowed the measurement of interface state density (˜1013 cm-2 eV-1). Small-signal frequency performance of 75 and 115 GHz was obtained for ft and fmax, respectively.

Gas spark switches with increased operating life for Marx generator of lightning test complex

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bykov, Yu. A.; Krastelev, E. G., E-mail: ekrastelev@yandex.ru

A new design of gas spark switches with an increased operating life and stable dynamic characteristics for the Marx generator of the lightning test complex has been developed. The switches are characterized by the following parameters in the mode of operation: voltage up to 80 kV, discharge current up to 50 kA, flowing charge up to 3.5 C/pulse. An increased operating life is achieved by using torus-shaped electrodes with increased working surface area and a trigger electrode in the form of a thick disk with a hole located between them. Low breakdown delay time and high stability of breakdown voltagemore » under dynamic conditions are provided by gas preionization in the spark gap using UV radiation of an additional corona discharge in the axial region.« less

Towards Bridging the Gaps in Holistic Transition Prediction via Numerical Simulations

NASA Technical Reports Server (NTRS)

Choudhari, Meelan M.; Li, Fei; Duan, Lian; Chang, Chau-Lyan; Carpenter, Mark H.; Streett, Craig L.; Malik, Mujeeb R.

2013-01-01

The economic and environmental benefits of laminar flow technology via reduced fuel burn of subsonic and supersonic aircraft cannot be realized without minimizing the uncertainty in drag prediction in general and transition prediction in particular. Transition research under NASA's Aeronautical Sciences Project seeks to develop a validated set of variable fidelity prediction tools with known strengths and limitations, so as to enable "sufficiently" accurate transition prediction and practical transition control for future vehicle concepts. This paper provides a summary of selected research activities targeting the current gaps in high-fidelity transition prediction, specifically those related to the receptivity and laminar breakdown phases of crossflow induced transition in a subsonic swept-wing boundary layer. The results of direct numerical simulations are used to obtain an enhanced understanding of the laminar breakdown region as well as to validate reduced order prediction methods.

Observation of the Dirac fluid and the breakdown of the Wiedemann-Franz law in graphene.

PubMed

Crossno, Jesse; Shi, Jing K; Wang, Ke; Liu, Xiaomeng; Harzheim, Achim; Lucas, Andrew; Sachdev, Subir; Kim, Philip; Taniguchi, Takashi; Watanabe, Kenji; Ohki, Thomas A; Fong, Kin Chung

2016-03-04

Interactions between particles in quantum many-body systems can lead to collective behavior described by hydrodynamics. One such system is the electron-hole plasma in graphene near the charge-neutrality point, which can form a strongly coupled Dirac fluid. This charge-neutral plasma of quasi-relativistic fermions is expected to exhibit a substantial enhancement of the thermal conductivity, thanks to decoupling of charge and heat currents within hydrodynamics. Employing high-sensitivity Johnson noise thermometry, we report an order of magnitude increase in the thermal conductivity and the breakdown of the Wiedemann-Franz law in the thermally populated charge-neutral plasma in graphene. This result is a signature of the Dirac fluid and constitutes direct evidence of collective motion in a quantum electronic fluid. Copyright © 2016, American Association for the Advancement of Science.

Gas cluster ion beam surface treatments for reducing field emission and breakdown of electrodes and SRF cavities

NASA Astrophysics Data System (ADS)

Swenson, D. R.; Wu, A. T.; Degenkolb, E.; Insepov, Z.

2007-08-01

Sub-micron-scale surface roughness and contamination cause field emission that can lead to high-voltage breakdown of electrodes, and these are limiting factors in the development of high gradient RF technology. We are studying various Gas Cluster Ion Beam (GCIB) treatments to smooth, clean, etch and/or chemically alter electrode surfaces to allow higher fields and accelerating gradients, and to reduce the time and cost of conditioning high-voltage electrodes. For this paper, we have processed Nb, stainless steel and Ti electrode materials using beams of Ar, O2, or NF3 + O2 clusters with accelerating potentials up to 35 kV. Using a scanning field emission microscope (SFEM), we have repeatedly seen a dramatic reduction in the number of field emission sites on Nb coupons treated with GCIB. Smoothing effects on stainless steel and Ti substrates, evaluated using SEM and AFM imaging, show that 200-nm-wide polishing scratch marks are greatly attenuated. A 150-mm diameter GCIB-treated stainless steel electrode has shown virtually no DC field emission current at gradients over 20 MV/m.

Characterization of polybenzimidazole (PBI) film at high temperatures

NASA Astrophysics Data System (ADS)

Hammoud, Ahmad N.; Suthar, J. L.

1992-04-01

Polybenzimidazole, a linear thermoplastic polymer with excellent thermal stability and strength retention over a wide range of temperatures, was evaluated for its potential use as the main dielectric in high temperature capacitors. The film was characterized in terms of its dielectric properties in a frequency range of 50 Hz to 100 kilo-Hz. These properties, which include the dielectric constant and dielectric loss, were also obtained in a temperature range from 20 C to 300 C with an electrical stress of 60 Hz, 50 V/mil present. The alternating and direct current breakdown voltages of silicone oil impregnated films as a function of temperature were also determined. The results obtained indicate that while the film remained relatively stable up to 200 C, it exhibited an increase in its dielectric properties as the temperature was raised to 300 C. It was also found that conditioning of the film by heat treatment at 60 C for six hours tended to improve its dielectric and breakdown properties. The results are discussed and conclusions made concerning the suitability of the film as a high temperature capacitor dielectric.

Characterization of polybenzimidazole (PBI) film at high temperatures

NASA Technical Reports Server (NTRS)

Hammoud, Ahmad N.; Suthar, J. L.

1992-01-01

Polybenzimidazole, a linear thermoplastic polymer with excellent thermal stability and strength retention over a wide range of temperatures, was evaluated for its potential use as the main dielectric in high temperature capacitors. The film was characterized in terms of its dielectric properties in a frequency range of 50 Hz to 100 kilo-Hz. These properties, which include the dielectric constant and dielectric loss, were also obtained in a temperature range from 20 C to 300 C with an electrical stress of 60 Hz, 50 V/mil present. The alternating and direct current breakdown voltages of silicone oil impregnated films as a function of temperature were also determined. The results obtained indicate that while the film remained relatively stable up to 200 C, it exhibited an increase in its dielectric properties as the temperature was raised to 300 C. It was also found that conditioning of the film by heat treatment at 60 C for six hours tended to improve its dielectric and breakdown properties. The results are discussed and conclusions made concerning the suitability of the film as a high temperature capacitor dielectric.

Delayed avalanche breakdown of high-voltage silicon diodes: Various structures exhibit different picosecond-range switching behavior

NASA Astrophysics Data System (ADS)

Brylevskiy, Viktor; Smirnova, Irina; Gutkin, Andrej; Brunkov, Pavel; Rodin, Pavel; Grekhov, Igor

2017-11-01

We present a comparative study of silicon high-voltage diodes exhibiting the effect of delayed superfast impact-ionization breakdown. The effect manifests itself in a sustainable picosecond-range transient from the blocking to the conducting state and occurs when a steep voltage ramp is applied to the p+-n-n+ diode in the reverse direction. Nine groups of diodes with graded and abrupt pn-junctions have been specially fabricated for this study by different techniques from different Si substrates. Additionally, in two groups of these structures, the lifetime of nonequilibrium carriers was intentionally reduced by electron irradiation. All diodes have identical geometrical parameters and similar stationary breakdown voltages. Our experimental setup allows measuring both device voltage and current during the kilovolt switching with time resolution better than 50 ps. Although all devices are capable of forming a front with kilovolt amplitude and 100 ps risetime in the in-series load, the structures with graded pn-junctions have anomalously large residual voltage. The Deep Level Transient Spectroscopy study of all diode structures has been performed in order to evaluate the effect of deep centers on device performance. It was found that the presence of deep-level electron traps negatively correlates with parameters of superfast switching, whereas a large concentration of recombination centers created by electron irradiation has virtually no influence on switching characteristics.

Interaction dynamics of temporal and spatial separated cavitation bubbles in water

NASA Astrophysics Data System (ADS)

Tinne, N.; Ripken, T.; Lubatschowski, H.

2010-02-01

The LASIK procedure is a well established laser based treatment in ophthalmology. Nowadays it includes a cutting of the corneal tissue bases on ultra short pulses which are focused below the tissue surface to create an optical breakdown and hence a dissection of the tissue. The energy of the laser pulse is absorbed by non-linear processes that result in an expansion of a cavitation bubble and rupturing of the tissue. Due to a reduction of the duration of treatment the current development of ultra short laser systems points to higher repetition rates. This in turn results in a probable interaction between different cavitation bubbles of adjacent optical breakdowns. While the interaction of one single laser pulse with biological tissue is analyzed reasonably well experimentally and theoretically, the interaction of several spatial and temporal following pulses is scarcely determined yet. We present a high-speed photography analysis of cavitation bubble interaction for two spatial separated laser-induced optical breakdowns varying the laser pulse energy as well as the spatial distance. Depending on a change of these parameters different kinds of interactions such as a flattening and deformation of bubble shape, asymmetric water streams and jet formation were observed. The results of this research can be used to comprehend and optimize the cutting effect of ultra short pulse laser systems with high repetition rates (> 1 MHz).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Rolland

Many present and future particle accelerators are limited by the maximum electric gradient and peak surface fields that can be realized in RF cavities. Despite considerable effort, a comprehensive theory of RF breakdown has not been achieved and mitigation techniques to improve practical maximum accelerating gradients have had only limited success. Part of the problem is that RF breakdown in an evacuated cavity involves a complex mixture of effects, which include the geometry, metallurgy, and surface preparation of the accelerating structures and the make-up and pressure of the residual gas in which plasmas form. Studies showed that high gradients canmore » be achieved quickly in 805 MHz RF cavities pressurized with dense hydrogen gas, as needed for muon cooling channels, without the need for long conditioning times, even in the presence of strong external magnetic fields. This positive result was expected because the dense gas can practically eliminate dark currents and multipacting. In this project we used this high pressure technique to suppress effects of residual vacuum and geometry that are found in evacuated cavities in order to isolate and study the role of the metallic surfaces in RF cavity breakdown as a function of magnetic field, frequency, and surface preparation. One of the interesting and useful outcomes of this project was the unanticipated collaborations with LANL and Fermilab that led to new insights as to the operation of evacuated normal-conducting RF cavities in high external magnetic fields. Other accomplishments included: (1) RF breakdown experiments to test the effects of SF6 dopant in H2 and He gases with Sn, Al, and Cu electrodes were carried out in an 805 MHz cavity and compared to calculations and computer simulations. The heavy corrosion caused by the SF6 components led to the suggestion that a small admixture of oxygen, instead of SF6, to the hydrogen would allow the same advantages without the corrosion in a practical muon beam line. (2) A 1.3 GHz RF test cell capable of operating both at high pressure and in vacuum with replaceable electrodes was designed, built, and power tested in preparation for testing the frequency and geometry effects of RF breakdown at Argonne National Lab. At the time of this report this cavity is still waiting for the 1.3 GHz klystron to be available at the Wakefield Test Facility. (3) Under a contract with Los Alamos National Lab, an 805 MHz RF test cavity, known as the All-Seasons Cavity (ASC), was designed and built by Muons, Inc. to operate either at high pressure or under vacuum. The LANL project to use the (ASC) was cancelled and the testing of the cavity has been continued under the grant reported on here using the Fermilab Mucool Test Area (MTA). The ASC is a true pillbox cavity that has performed under vacuum in high external magnetic field better than any other and has demonstrated that the high required accelerating gradients for many muon cooling beam line designs are possible. (4) Under ongoing support from the Muon Acceleration Program, microscopic surface analysis and computer simulations have been used to develop models of RF breakdown that apply to both pressurized and vacuum cavities. The understanding of RF breakdown will lead to better designs of RF cavities for many applications. An increase in the operating accelerating gradient, improved reliability and shorter conditioning times can generate very significant cost savings in many accelerator projects.« less

Kinetic simulations of gas breakdown in the dense plasma focus

DOE PAGES

Bennett, N.; Blasco, M.; Breeding, K.; ...

2017-06-09

We describe the first fully-kinetic, collisional, and electromagnetic simulations of the breakdown phase of a MA-scale dense plasma focus and are shown to agree with measured electrical characteristics, including breakdown time. In the model, avalanche ionization is driven by cathode electron emission and this results in incomplete gas breakdown along the insulator. This reinforces the importance of the conditioning process that creates a metallic layer on the insulator surface. The simulations, nonetheless, help explain the relationship between the gas pressure, the insulator length, and the coaxial gap width. In the past, researchers noted three breakdown patterns related to pressure. Simulationmore » and analytic results show that at low pressures, long ionization path lengths lead to volumetric breakdown, while high pressures lead to breakdown across the relatively small coaxial electrode gap. In an intermediate pressure regime, ionization path lengths are comparable to the insulator length which promotes ideal breakdown along the insulator surface.« less

Arrays of Synthetic Atoms: Nanocapacitor Batteries with Large Energy Density and Small Leak Currents

DTIC Science & Technology

2017-11-28

is exempt from public affairs security and policy review in accordance with AFI 61-201, paragraph 2.3.5.1. This report is available to the general... AVAILABILITY STATEMENT Approved for public release; distribution is unlimited. 13. SUPPLEMENTARY NOTES 14. ABSTRACT We assembled nanocapacitors with...of its performance data with theoretical predictions. We investigated recovery of alumina nanocapacitors after high -voltage breakdown. Previously

Stacked switchable element and diode combination with a low breakdown switchable element

DOEpatents

Wang, Qi [Littleton, CO; Ward, James Scott [Englewood, CO; Hu, Jian [Englewood, CO; Branz, Howard M [Boulder, CO

2012-06-19

A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship. The semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a low-density forming current and/or a low voltage.

High Voltage, Low Inductance Hydrogen Thyratron Study Program.

DTIC Science & Technology

1981-01-01

E-E Electrode Spacing Ef Cathode Heater Voltage egy Peak Forward Grid Voltage epy Peak Forward Anode Voltage epx Peak Inverse Anode Voltage Eres... electrodes . ........... 68 30 Marx generator used for sample testing. ........... 68 31 Waveforms showing sample holdoff and sample breakdown 73 32...capability (a function of gas pressure and electrode spacing) could be related to its current rise time capability (a function of gas pressure and inductance

Experimental study on the 4H-SiC-based VDMOSFETs with lightly doped P-well field-limiting rings termination

NASA Astrophysics Data System (ADS)

He, Yan Jing; Lv, Hong Liang; Tang, Xiao Yan; Song, Qing Wen; Zhang, Yi Meng; Han, Chao; Zhang, Yi Men; Zhang, Yu Ming

2017-03-01

A lightly doped P-well field-limiting rings (FLRs) termination on 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors (VDMOSFETs) has been investigated. Based on the simulation, the proposed termination applied to 4H-SiC VDMOSFET could achieve an almost same breakdown voltage (BV) and have the advantage of lower ion-implantation damage comparing with P+ FLRs termination. Meanwhile, this kind of termination also reduces the difficulty and consumption of fabrication process. 4H-SiC VDMOSFETs with lightly doped P-well (FLRs) termination have been fabricated on 10 μm thick epi-layer with nitrogen doping concentration of 6.2 × 1015 cm-3. The maximum breakdown voltage of the 4H-SiC VDMOSFETs has achieved as high as 1610 V at a current of 15 μA, which is very close to the simulated result of 1643 V and about 90% of the plane parallel breakdown voltage of 1780 V. It is considered that P-well FLRs termination is an effective, robust and process-tolerant termination structure suitable for 4H-SiC VDMOSFET.

Sharp burnout failure observed in high current-carrying double-walled carbon nanotube fibers

NASA Astrophysics Data System (ADS)

Song, Li; Toth, Geza; Wei, Jinquan; Liu, Zheng; Gao, Wei; Ci, Lijie; Vajtai, Robert; Endo, Morinobu; Ajayan, Pulickel M.

2012-01-01

We report on the current-carrying capability and the high-current-induced thermal burnout failure modes of 5-20 µm diameter double-walled carbon nanotube (DWNT) fibers made by an improved dry-spinning method. It is found that the electrical conductivity and maximum current-carrying capability for these DWNT fibers can reach up to 5.9 × 105 S m - 1 and over 1 × 105 A cm - 2 in air. In comparison, we observed that standard carbon fiber tended to be oxidized and burnt out into cheese-like morphology when the maximum current was reached, while DWNT fiber showed a much slower breakdown behavior due to the gradual burnout in individual nanotubes. The electron microscopy observations further confirmed that the failure process of DWNT fibers occurs at localized positions, and while the individual nanotubes burn they also get aligned due to local high temperature and electrostatic field. In addition a finite element model was constructed to gain better understanding of the failure behavior of DWNT fibers.

Wide-Bandgap Semiconductor Devices for Automotive Applications

NASA Astrophysics Data System (ADS)

Sugimoto, M.; Ueda, H.; Uesugi, T.; Kachi, T.

2007-06-01

In this paper, we discuss requirements of power devices for automotive applications, especially hybrid vehicles and the development of GaN power devices at Toyota. We fabricated AlGaN/GaN HEMTs and measured their characteristics. The maximum breakdown voltage was over 600V. The drain current with a gate width of 31mm was over 8A. A thermograph image of the HEMT under high current operation shows the AlGaN/GaN HEMT operated at more than 300°C. And we confirmed the operation of a vertical GaN device. All the results of the GaN HEMTs are really promising to realize high performance and small size inverters for future automobiles.

Step buffer layer of Al0.25Ga0.75N/Al0.08Ga0.92N on P-InAlN gate normally-off high electron mobility transistors

NASA Astrophysics Data System (ADS)

Shrestha, Niraj M.; Li, Yiming; Chang, E. Y.

2016-07-01

Normally-off AlGaN/GaN high electron mobility transistors (HEMTs) are indispensable devices for power electronics as they can greatly simplify circuit designs in a cost-effective way. In this work, the electrical characteristics of p-type InAlN gate normally-off AlGaN/GaN HEMTs with a step buffer layer of Al0.25Ga0.75N/Al0.1Ga0.9N is studied numerically. Our device simulation shows that a p-InAlN gate with a step buffer layer allows the transistor to possess normally-off behavior with high drain current and high breakdown voltage simultaneously. The gate modulation by the p-InAlN gate and the induced holes appearing beneath the gate at the GaN/Al0.25Ga0.75N interface is because a hole appearing in the p-InAlN layer can effectively vary the threshold voltage positively. The estimated threshold voltage of the normally-off HEMTs explored is 2.5 V at a drain bias of 25 V, which is 220% higher than the conventional p-AlGaN normally-off AlGaN/GaN gate injection transistor (GIT). Concurrently, the maximum current density of the explored HEMT at a drain bias of 10 V slightly decreases by about 7% (from 240 to 223 mA mm-1). At a drain bias of 15 V, the current density reached 263 mA mm-1. The explored structure is promising owing to tunable positive threshold voltage and the maintenance of similar current density; notably, its breakdown voltage significantly increases by 36% (from 800 V, GIT, to 1086 V). The engineering findings of this study indicate that novel p-InAlN for both the gate and the step buffer layer can feature a high threshold voltage, large current density and high operating voltage for advanced AlGaN/GaN HEMT devices.

A Framework of Combining Case-Based Reasoning with a Work Breakdown Structure for Estimating the Cost of Online Course Production Projects

ERIC Educational Resources Information Center

He, Wu

2014-01-01

Currently, a work breakdown structure (WBS) approach is used as the most common cost estimation approach for online course production projects. To improve the practice of cost estimation, this paper proposes a novel framework to estimate the cost for online course production projects using a case-based reasoning (CBR) technique and a WBS. A…

Study of the time-resolved, 3-dimensional current density distribution in solid metallic liners at 1 MA

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bott-Suzuki, S. C.; Cordaro, S. W.; Caballero Bendixsen, L. S.

We present a study of the time varying current density distribution in solid metallic liner experiments at the 1MA level. Measurements are taken using an array of magnetic field probes which provide 2D triangulation of the average centroid of the drive current in the load at 3 discrete axial positions. These data are correlated with gated optical self-emission imaging which directly images the breakdown and plasma formation region. Results show that the current density is azimuthally non-uniform, and changes significantly throughout the 100ns experimental timescale. Magnetic field probes show clearly motion of the current density around the liner azimuth overmore » 10ns timescales. If breakdown is initiated at one azimuthal location, the current density remains non-uniform even over large spatial extents throughout the current drive. The evolution timescales are suggestive of a resistive diffusion process or uneven current distributions among simultaneously formed but discrete plasma conduction paths.« less

Study of the time-resolved, 3-dimensional current density distribution in solid metallic liners at 1 MA

DOE PAGES

Bott-Suzuki, S. C.; Cordaro, S. W.; Caballero Bendixsen, L. S.; ...

2016-09-01

We present a study of the time varying current density distribution in solid metallic liner experiments at the 1MA level. Measurements are taken using an array of magnetic field probes which provide 2D triangulation of the average centroid of the drive current in the load at 3 discrete axial positions. These data are correlated with gated optical self-emission imaging which directly images the breakdown and plasma formation region. Results show that the current density is azimuthally non-uniform, and changes significantly throughout the 100ns experimental timescale. Magnetic field probes show clearly motion of the current density around the liner azimuth overmore » 10ns timescales. If breakdown is initiated at one azimuthal location, the current density remains non-uniform even over large spatial extents throughout the current drive. The evolution timescales are suggestive of a resistive diffusion process or uneven current distributions among simultaneously formed but discrete plasma conduction paths.« less

Interface engineering and reliability characteristics of hafnium dioxide with poly silicon gate and dual metal (ruthenium-tantalum alloy, ruthenium) gate electrode for beyond 65 nm technology

NASA Astrophysics Data System (ADS)

Kim, Young-Hee

Chip density and performance improvements have been driven by aggressive scaling of semiconductor devices. In both logic and memory applications, SiO 2 gate dielectrics has reached its physical limit, direct tunneling resulting from scaling down of dielectrics thickness. Therefore high-k dielectrics have attracted a great deal of attention from industries as the replacement of conventional SiO2 gate dielectrics. So far, lots of candidate materials have been evaluated and Hf-based high-k dielectrics were chosen to the promising materials for gate dielectrics. However, lots of issues were identified and more thorough researches were carried out on Hf-based high-k dielectrics. For instances, mobility degradation, charge trapping, crystallization, Fermi level pinning, interface engineering, and reliability studies. In this research, reliability study of HfO2 were explored with poly gate and dual metal (Ru-Ta alloy, Ru) gate electrode as well as interface engineering. Hard breakdown and soft breakdown were compared and Weibull slope of soft breakdown was smaller than that of hard breakdown, which led to a potential high-k scaling issue. Dynamic reliability has been studied and the combination of trapping and detrapping contributed the enhancement of lifetime projection. Polarity dependence was shown that substrate injection might reduce lifetime projection as well as it increased soft breakdown behavior. Interface tunneling mechanism was suggested with dual metal gate technology. Soft breakdown (l st breakdown) was mainly due to one layer breakdown of bi-layer structure. Low weibull slope was in part attributed to low barrier height of HfO 2 compared to interface layer. Interface layer engineering was thoroughly studied in terms of mobility, swing, and short channel effect using deep sub-micron MOSFET devices. In fact, Hf-based high-k dielectrics could be scaled down to below EOT of ˜10A and it successfully achieved the competitive performance goals. However, it is still necessary to understand what is intrinsic we can not change, or what is extrinsic one we can improve.

The effect of the pulse repetition rate on the fast ionization wave discharge

NASA Astrophysics Data System (ADS)

Huang, Bang-Dou; Carbone, Emile; Takashima, Keisuke; Zhu, Xi-Ming; Czarnetzki, Uwe; Pu, Yi-Kang

2018-06-01

The effect of the pulse repetition rate (PRR) on the generation of high energy electrons in a fast ionization wave (FIW) discharge is investigated by both experiment and modelling. The FIW discharge is driven by nanosecond high voltage pulses and is generated in helium with a pressure of 30 mbar. The axial electric field (E z ), as the driven force of high energy electron generation, is strongly influenced by PRR. Both the measurement and the model show that, during the breakdown, the peak value of E z decreases with the PRR, while after the breakdown, the value of E z increases with the PRR. The electron energy distribution function (EEDF) is calculated with a model similar to Boeuf and Pitchford (1995 Phys. Rev. E 51 1376). It is found that, with a low value of PRR, the EEDF during the breakdown is strongly non-Maxwellian with an elevated high energy tail, while the EEDF after the breakdown is also non-Maxwellian but with a much depleted population of high energy electrons. However, with a high value of PRR, the EEDF is Maxwellian-like without much temporal variation both during and after the breakdown. With the calculated EEDF, the temporal evolution of the population of helium excited species given by the model is in good agreement with the measured optical emission, which also depends critically on the shape of the EEDF.

Assessing the effects of multiple stressors on the functioning of Mediterranean rivers using poplar wood breakdown.

PubMed

Aristi, Ibon; Díez, Jose Ramon; Larrañaga, Aitor; Navarro-Ortega, Alícia; Barceló, Damià; Elosegi, Arturo

2012-12-01

Mediterranean rivers in the Iberian Peninsula are being increasingly affected by human activities, which threaten their ecological status. A clear picture of how do these multiple stressors affect river ecosystem functioning is still lacking. We addressed this question by measuring a key ecosystem process, namely breakdown of organic matter, at 66 sites distributed across Mediterranean Spain. We performed breakdown experiments by measuring the mass lost by wood sticks for 54 to 106 days. Additionally, we gathered data on physico-chemical, biological and geomorphological characteristics of study sites. Study sites spanned a broad range of environmental characteristics and breakdown rates varied fiftyfold across sites. No clear geographic patterns were found between or within basins. 90th quantile regressions performed to link breakdown rates with environmental characteristics included the following 7 variables in the model, in decreasing order of importance: altitude, water content in phosphorus, catchment area, toxicity, invertebrate-based biotic index, riparian buffer width, and diatom-based quality index. Breakdown rate was systematically low in high-altitude rivers with few human impacts, but showed a high variability in areas affected by human activity. This increase in variability is the result of the influence of multiple stressors acting simultaneously, as some of these can promote whereas others slow down the breakdown of organic matter. Therefore, stick breakdown gives information on the intensity of a key ecosystem process, which would otherwise be very difficult to predict based on environmental variables. Copyright © 2012 Elsevier B.V. All rights reserved.

Study of RF breakdown and multipacting in accelerator components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pande, Manjiri; Singh, P., E-mail: manjiri@barc.gov.in, E-mail: psingh@barc.gov.in

2014-07-01

Radio frequency (RF) structures that are part of accelerators and energy sources, operate with sinusoidally varying electromagnetic fields under high RF energy. Here, RF breakdown and multipacting take place in RF structures and limit their performance. Electron field emission processes in a RF structure are precursors for breakdown processes. RF breakdown is a major phenomena affecting and causing the irreversible damage to RF structures. Breakdown rate and the damage induced by the breakdowns are its important properties. The damage is related to power absorbed during breakdown, while the breakdown rate is determined by the amplitudes of surface electric and magneticmore » fields, geometry, metal surface preparation and conditioning history. It limits working power and produces irreversible surface damage. The breakdown limit depends on the RF circuit, structure geometry, RF frequency, input RF power, pulse width, materials used, surface processing technique and surface electric and magnetic fields. Multipactor (MP) is a low power, electron multiplication based resonance breakdown phenomenon in vacuum and is often observed in RF structures. A multipactor discharge is undesirable, as it can create a reactive component that detunes the resonant cavities and components, generates noise in communication system and induces gas desorption from the conductor surfaces. In RF structures, certain conditions are required to generate multipacting. (author)« less

Investigating the effective range of vacuum ultraviolet-mediated breakdown in high-power microwave metamaterials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Chien-Hao, E-mail: cliu82@wisc.edu; Neher, Joel D., E-mail: jdneher@wisc.edu; Booske, John H., E-mail: booske@engr.wisc.edu

2014-10-14

Metamaterials and periodic structures operating under high-power excitations are susceptible to breakdown. It was recently demonstrated that a localized breakdown created in a given region of a periodic structure can facilitate breakdown in other regions of the structure where the intensity of the incident electromagnetic fields may not be high enough to cause breakdown under normal circumstances. It was also demonstrated that this phenomenon is due to the generation of vacuum ultraviolet radiation at the location of the initial discharge, which propagates to the neighboring regions (e.g., other unit cells in a periodic structure) and facilitates the generation of amore » discharge at a lower incident power level. In this paper, we present the results of an experimental study conducted to determine the effective range of this physical phenomenon for periodic structures that operate in air and in pure nitrogen gas at atmospheric pressure levels. It is demonstrated that when breakdown is induced in a periodic structure using a high-power pulse with a frequency of 9.382 GHz, duration of 0.8 μs, and peak power level of 25 kW, this phenomenon is highly likely to happen in radii of approximately 16–17 mm from the location of the initial discharge under these test conditions. The results of this study are significant in designing metamaterials and periodic structures for high-power microwave applications as they suggest that a localized discharge created in such a periodic structure with a periodicity less than 16–17 mm can spread over a large surface and result in a distributed discharge.« less

Reliability Effects of Surge Current Testing of Solid Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2007-01-01

Solid tantalum capacitors are widely used in space applications to filter low-frequency ripple currents in power supply circuits and stabilize DC voltages in the system. Tantalum capacitors manufactured per military specifications (MIL-PRF-55365) are established reliability components and have less than 0.001% of failures per 1000 hours (the failure rate is less than 10 FIT) for grades D or S, thus positioning these parts among electronic components with the highest reliability characteristics. Still, failures of tantalum capacitors do happen and when it occurs it might have catastrophic consequences for the system. This is due to a short-circuit failure mode, which might be damaging to a power supply, and also to the capability of tantalum capacitors with manganese cathodes to self-ignite when a failure occurs in low-impedance applications. During such a failure, a substantial amount of energy is released by exothermic reaction of the tantalum pellet with oxygen generated by the overheated manganese oxide cathode, resulting not only in destruction of the part, but also in damage of the board and surrounding components. A specific feature of tantalum capacitors, compared to ceramic parts, is a relatively large value of capacitance, which in contemporary low-size chip capacitors reaches dozens and hundreds of microfarads. This might result in so-called surge current or turn-on failures in the parts when the board is first powered up. Such a failure, which is considered as the most prevalent type of failures in tantalum capacitors [I], is due to fast changes of the voltage in the circuit, dV/dt, producing high surge current spikes, I(sub sp) = Cx(dV/dt), when current in the circuit is unrestricted. These spikes can reach hundreds of amperes and cause catastrophic failures in the system. The mechanism of surge current failures has not been understood completely yet, and different hypotheses were discussed in relevant literature. These include a sustained scintillation breakdown model [1-3]; electrical oscillations in circuits with a relatively high inductance [4-6]; local overheating of the cathode [5,7, 8]; mechanical damage to tantalum pentoxide dielectric caused by the impact of MnO2 crystals [2,9, 10]; or stress-induced-generation of electron traps caused by electromagnetic forces developed during current spikes [11]. A commonly accepted explanation of the surge current failures is that at unlimited current supply during surge current conditions, the self-healing mechanism in tantalum capacitors does not work, and what would be a minor scintillation spike if the current were limited, becomes a catastrophic failure of the part [l, 12]. However, our data show that the scintillation breakdown voltages are significantly greater that the surge current breakdown voltages, so it is still not clear why the part, which has no scintillations, would fail at the same voltage during surge current testing (SCT).

Numerical characterization of plasma breakdown in reversed field pinches

NASA Astrophysics Data System (ADS)

Peng, Yanli; Zhang, Ya; Mao, Wenzhe; Yang, Zhoujun; Hu, Xiwei; Jiang, Wei

2018-02-01

In the reversed field pinch, there is considerable interest in investigating the plasma breakdown. Indeed, the plasma formed during the breakdown may have an influence on the confinement and maintenance in the latter process. However, up to now there has been no related work, experimentally or in simulation, regarding plasma breakdown in reversed field pinch (RFP). In order to figure out the physical mechanism behind plasma breakdown, the effects of the toroidal and error magnetic field, as well as the loop voltage have been studied. We find that the error magnetic field cannot be neglected even though it is quite small in the short plasma breakdown phase. As the toroidal magnetic field increases, the averaged electron energy is reduced after plasma breakdown is complete, which is disadvantageous for the latter process. In addition, unlike the voltage limits in the tokamak, loop voltages can be quite high because there are no requirements for superconductivity. Volt-second consumption has a small difference under different loop voltages. The breakdown delay still exists in various loop voltage cases, but it is much shorter compared to that in the tokamak case. In all, successful breakdowns are possible in the RFP under a fairly broad range of parameters.

Novel Physical Model for DC Partial Discharge in Polymeric Insulators

NASA Astrophysics Data System (ADS)

Andersen, Allen; Dennison, J. R.

The physics of DC partial discharge (DCPD) continues to pose a challenge to researchers. We present a new physically-motivated model of DCPD in amorphous polymers based on our dual-defect model of dielectric breakdown. The dual-defect model is an extension of standard static mean field theories, such as the Crine model, that describe avalanche breakdown of charge carriers trapped on uniformly distributed defect sites. It assumes the presence of both high-energy chemical defects and low-energy thermally-recoverable physical defects. We present our measurements of breakdown and DCPD for several common polymeric materials in the context of this model. Improved understanding of DCPD and how it relates to eventual dielectric breakdown is critical to the fields of spacecraft charging, high voltage DC power distribution, high density capacitors, and microelectronics. This work was supported by a NASA Space Technology Research Fellowship.

Robust Electrical Transfer System (RETS) for Solar Array Drive Mechanism SlipRing Assembly

NASA Astrophysics Data System (ADS)

Bommottet, Daniel; Bossoney, Luc; Schnyder, Ralph; Howling, Alan; Hollenstein, Christoph

2013-09-01

Demands for robust and reliable power transmission systems for sliprings for SADM (Solar Array Drive Mechanism) are increasing steadily. As a consequence, it is required to know their performances regarding the voltage breakdown limit.An understanding of the overall shape of the breakdown voltage versus pressure curve is established, based on experimental measurements of DC (Direct Current) gas breakdown in complex geometries compared with a numerical simulation model.In addition a detailed study was made of the functional behaviour of an entire wing of satellite in a like- operational mode, comprising the solar cells, the power transmission lines, the SRA (SlipRing Assembly), the power S3R (Sequential Serial/shunt Switching Regulators) and the satellite load to simulate the electrical power consumption.A test bench able to measure automatically the: a)breakdown voltage versus pressure curve and b)the functional switching performances, was developed and validated.

A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme

NASA Astrophysics Data System (ADS)

Kim, Dong Young; Seok, Ogyun; Park, Himchan; Bahng, Wook; Kim, Hyoung Woo; Park, Ki Cheol

2018-02-01

We report a low knee voltage and high breakdown voltage 4H-SiC TSBS employing poly-Si/Ni dual Schottky contacts. A knee voltage was significantly improved from 0.75 to 0.48 V by utilizing an alternative low work-function material of poly-Si as an anode electrode. Also, reverse breakdown voltage was successfully improved from 901 to 1154 V due to a shrunk low-work-function Schottky region by a proposed self-align etching process between poly-Si and SiC. SiC TSBS with poly-Si/Ni dual Schottky scheme is a suitable structure for high-efficiency rectification and high-voltage blocking operation.

Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes

NASA Astrophysics Data System (ADS)

Lyu, Yuexi; Han, Xi; Sun, Yaoyao; Jiang, Zhi; Guo, Chunyan; Xiang, Wei; Dong, Yinan; Cui, Jie; Yao, Yuan; Jiang, Dongwei; Wang, Guowei; Xu, Yingqiang; Niu, Zhichuan

2018-01-01

We report on the growth of high quality GaSb-based AlInAsSb quaternary alloy by molecular beam epitaxy (MBE) to fabricate avalanche photodiodes (APDs). By means of high resolution X-ray diffraction (HRXRD) and scanning transmission electron microscope (STEM), phase separation phenomenon of AlInAsSb random alloy with naturally occurring vertical superlattice configuration was demonstrated. To overcome the tendency for phase segregation while maintaining a highly crystalline film, a digital alloy technique with migration-enhanced epitaxy growth method was employed, using a shutter sequence of AlSb, AlAs, AlSb, Sb, In, InAs, In, Sb. AlInAsSb digital alloy has proved to be reproducible and consistent with single phase, showing sharp satellite peaks on HRXRD rocking curve and smooth surface morphology under atomic force microscopy (AFM). Using optimized digital alloy, AlInAsSb separate absorption, grading, charge, and multiplication (SAGCM) APD was grown and fabricated. At room temperature, the device showed high performance with low dark current density of ∼14.1 mA/cm2 at 95% breakdown and maximum stable gain before breakdown as high as ∼200, showing the potential for further applications in optoelectronic devices.

Internal Charging

NASA Technical Reports Server (NTRS)

Minow, Joseph I.

2014-01-01

(1) High energy (>100keV) electrons penetrate spacecraft walls and accumulate in dielectrics or isolated conductors; (2) Threat environment is energetic electrons with sufficient flux to charge circuit boards, cable insulation, and ungrounded metal faster than charge can dissipate; (3) Accumulating charge density generates electric fields in excess of material breakdown strenght resulting in electrostatic discharge; and (4) System impact is material damage, discharge currents inside of spacecraft Faraday cage on or near critical circuitry, and RF noise.

Lipid Droplets: Formation to Breakdown.

PubMed

Meyers, Alex; Weiskittel, Taylor M; Dalhaimer, Paul

2017-06-01

One of the most exciting areas of cell biology during the last decade has been the study of lipid droplets. Lipid droplets allow cells to store non-polar molecules such as neutral lipids in specific compartments where they are sequestered from the aqueous environment of the cell yet can be accessed through regulated mechanisms. These structures are highly conserved, appearing in organisms throughout the phylogenetic tree. Until somewhat recently, lipid droplets were widely regarded as inert, however progress in the field has continued to demonstrate their vast roles in a number of cellular processes in both mitotic and post-mitotic cells. No doubt the increase in the attention given to lipid droplet research is due to their central role in current pressing human diseases such as obesity, type-2 diabetes, and atherosclerosis. This review provides a mechanistic timeline from neutral lipid synthesis through lipid droplet formation and size augmentation to droplet breakdown.

Anodic Oxidation in Aluminum Electrode by Using Hydrated Amorphous Aluminum Oxide Film as Solid Electrolyte under High Electric Field.

PubMed

Yao, Manwen; Chen, Jianwen; Su, Zhen; Peng, Yong; Zou, Pei; Yao, Xi

2016-05-04

Dense and nonporous amorphous aluminum oxide (AmAO) film was deposited onto platinized silicon substrate by sol-gel and spin coating technology. The evaporated aluminum film was deposited onto the AmAO film as top electrode. The hydrated AmAO film was utilized as a solid electrolyte for anodic oxidation of the aluminum electrode (Al) film under high electric field. The hydrated AmAO film was a high efficiency electrolyte, where a 45 nm thick Al film was anodized completely on a 210 nm thick hydrated AmAO film. The current-voltage (I-V) characteristics and breakdown phenomena of a dry and hydrated 210 nm thick AmAO film with a 150 nm thick Al electrode pad were studied in this work. Breakdown voltage of the dry and hydrated 210 nm thick AmAO film were 85 ± 3 V (405 ± 14 MV m(-1)) and 160 ± 5 V (762 ± 24 MV m(-1)), respectively. The breakdown voltage of the hydrated AmAO film increased about twice, owing to the self-healing behavior (anodic oxidation reaction). As an intuitive phenomenon of the self-healing behavior, priority anodic oxidation phenomena was observed in a 210 nm thick hydrated AmAO film with a 65 nm thick Al electrode pad. The results suggested that self-healing behavior (anodic oxidation reaction) was occurring nearby the defect regions of the films during I-V test. It was an effective electrical self-healing method, which would be able to extend to many other simple and complex oxide dielectrics and various composite structures.

Anomalous memory effect in the breakdown of low-pressure argon in a long discharge tube

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meshchanov, A. V.; Korshunov, A. N.; Ionikh, Yu. Z., E-mail: y.ionikh@spbu.ru

2015-08-15

The characteristics of breakdown of argon in a long tube (with a gap length of 75 cm and diameter of 2.8 cm) at pressures of 1 and 5 Torr and stationary discharge currents of 5–40 mA were studied experimentally. The breakdown was initiated by paired positive voltage pulses with a rise rate of ∼10{sup 8}–10{sup 9} V/s and duration of ∼1–10 ms. The time interval between pairs was varied in the range of Τ ∼ 0.1–1 s, and that between pulses in a pair was varied from τ = 0.4 ms to ≈Τ/2. The aim of this work was tomore » detect and study the so-called “anomalous memory effect” earlier observed in breakdown in nitrogen. The effect consists in the dynamic breakdown voltage in the second pulse in a pair being higher than in the first pulse (in contrast to the “normal” memory effect, in which the relation between the breakdown voltages is opposite). It is found that this effect is observed when the time interval between pairs of pulses is such that the first pulse in a pair is in the range of the normal memory effect of the preceding pair (under the given conditions, Τ ≈ 0.1–0.4 s). In this case, at τ ∼ 10 ms, the breakdown voltage of the second pulse is higher than the reduced breakdown voltage of the first pulse. Optical observations of the ionization wave preceding breakdown in a long tube show that, in the range of the anomalous memory effect and at smaller values of τ, no ionization wave is detected before breakdown in the second pulse. A qualitative interpretation of the experimental results is given.« less

An experimental investigation of vortex breakdown on a delta wing

NASA Technical Reports Server (NTRS)

Payne, F. M.; Nelson, R. C.

1986-01-01

An experimental investigation of vortex breakdown on delta wings at high angles is presented. Thin delta wings having sweep angles of 70, 75, 80 and 85 degrees are being studied. Smoke flow visualization and the laser light sheet technique are being used to obtain cross-sectional views of the leading edge vortices as they break down. At low tunnel speeds (as low as 3 m/s) details of the flow, which are usually imperceptible or blurred at higher speeds, can be clearly seen. A combination of lateral and longitudinal cross-sectional views provides information on the three dimensional nature of the vortex structure before, during and after breakdown. Whereas details of the flow are identified in still photographs, the dynamic characteristics of the breakdown process were recorded using high speed movies. Velocity measurements were obtained using a laser Doppler anemometer with the 70 degree delta wing at 30 degrees angle of attack. The measurements show that when breakdown occurs the core flow transforms from a jet-like flow to a wake-like flow.

Influence of the transition region between p- and n-type polycrystalline silicon passivating contacts on the performance of interdigitated back contact silicon solar cells

NASA Astrophysics Data System (ADS)

Reichel, Christian; Müller, Ralph; Feldmann, Frank; Richter, Armin; Hermle, Martin; Glunz, Stefan W.

2017-11-01

Passivating contacts based on thin tunneling oxides (SiOx) and n- and p-type semi-crystalline or polycrystalline silicon (poly-Si) enable high passivation quality and low contact resistivity, but the integration of these p+/n emitter and n+/n back surface field junctions into interdigitated back contact silicon solar cells poses a challenge due to high recombination at the transition region from p-type to n-type poly-Si. Here, the transition region was created in different configurations—(a) p+ and n+ poly-Si regions are in direct contact with each other ("pn-junction"), using a local overcompensation (counterdoping) as a self-aligning process, (b) undoped (intrinsic) poly-Si remains between the p+ and n+ poly-Si regions ("pin-junction"), and (c) etched trenches separate the p+ and n+ poly-Si regions ("trench")—in order to investigate the recombination characteristics and the reverse breakdown behavior of these solar cells. Illumination- and injection-dependent quasi-steady state photoluminescence (suns-PL) and open-circuit voltage (suns-Voc) measurements revealed that non-ideal recombination in the space charge regions with high local ideality factors as well as recombination in shunted regions strongly limited the performance of solar cells without a trench. In contrast, solar cells with a trench allowed for open-circuit voltage (Voc) of 720 mV, fill factor of 79.6%, short-circuit current (Jsc) of 41.3 mA/cm2, and a conversion efficiencies (η) of 23.7%, showing that a lowly conducting and highly passivating intermediate layer between the p+ and n+ poly-Si regions is mandatory. Independent of the configuration, no hysteresis was observed upon multiple stresses in reverse direction, indicating a controlled and homogeneously distributed breakdown, but with different breakdown characteristics.

Analysis of magnesium and copper in aluminum alloys with high repetition rate laser-ablation spark-induced breakdown spectroscopy

NASA Astrophysics Data System (ADS)

He, Xiaoyong; Dong, Bo; Chen, Yuqi; Li, Runhua; Wang, Fujuan; Li, Jiaoyang; Cai, Zhigang

2018-03-01

In order to improve the analytical speed and performance of laser-ablation based atomic emission spectroscopy, high repetition rate laser-ablation spark-induced breakdown spectroscopy (HRR LA-SIBS) was first developed. Magnesium and copper in aluminum alloys were analyzed with this technique. In the experiments, the fundamental output of an acousto-optically Q-switched Nd:YAG laser operated at 1 kHz repetition rate with low pulse energy and 120 ns pulse width was used to ablate the samples and the plasma emission was enhanced by spark discharge. The spectra were recorded with a compact fiber spectrometer with non-intensified charge-coupled device in non-gating mode. Different parameters relative with analytical performance, such as capacitance, voltage, laser pulse energy were optimized. Under current experimental conditions, calibration curves of magnesium and copper in aluminum alloys were built and limits of detection of them were determined to be 14.0 and 9.9 ppm by HRR LA-SIBS, respectively, which were 8-12 folds better than that achieved by HRR LA under similar experimental condition without spark discharge. The analytical sensitivities are close to those obtained with conventional LIBS but with improved analytical speed as well as possibility of using compact fiber spectrometer. Under high repetition rate operation, the noise level can be decreased and the analytical reproducibility can be improved obviously by averaging multiple measurements within short time. High repetition rate operation of laser-ablation spark-induced breakdown spectroscopy is very helpful for improving analytical speed. It is possible to find applications in fast elements analysis, especially fast two-dimension elemental mapping of solid samples.

Optically reversible electrical soft-breakdown in wide-bandgap oxides—A factorial study

NASA Astrophysics Data System (ADS)

Zhou, Y.; Ang, D. S.; Kalaga, P. S.

2018-04-01

In an earlier work, we found that an electrical soft-breakdown region in wide-bandgap oxides, such as hafnium dioxide, silicon dioxide, etc., could be reversed when illuminated by white light. The effect is evidenced by a decrease in the breakdown leakage current, termed as a negative photoconductivity response. This finding raises the prospect for optical sensing applications based on these traditionally non-photo-responsive but ubiquitous oxide materials. In this study, we examine the statistical distribution for the rate of breakdown reversal as well as the influence of factors such as wavelength, light intensity, oxide stoichiometry (or oxygen content) and temperature on the reversal rate. The rate of breakdown reversal is shown to be best described by the lognormal distribution. Light in the range of ˜400-700 nm is found to have relatively little influence on the reversal rate. On the other hand, light intensity, oxygen content and temperature, each of them has a clear impact; a stronger light intensity, an oxide that is richer in oxygen content and a reduced temperature all speed up the reversal process substantially. These experimental results are consistent with the proposed phenomenological redox model involving photo-assisted recombination of the surrounding oxygen interstitials with vacancy defects in the breakdown path.

Experimental breakdown of selected anodized aluminum samples in dilute plasmas

NASA Technical Reports Server (NTRS)

Grier, Norman T.; Domitz, Stanley

1992-01-01

Anodized aluminum samples representative of Space Station Freedom structural material were tested for electrical breakdown under space plasma conditions. In space, this potential arises across the insulating anodized coating when the spacecraft structure is driven to a negative bias relative to the external plasma potential due to plasma-surface interaction phenomena. For anodized materials used in the tests, it was found that breakdown voltage varied from 100 to 2000 volts depending on the sample. The current in the arcs depended on the sample, the capacitor, and the voltage. The level of the arc currents varied from 60 to 1000 amperes. The plasma number density varied from 3 x 10 exp 6 to 10 exp 3 ions per cc. The time between arcs increased as the number density was lowered. Corona testing of anodized samples revealed that samples with higher corona inception voltage had higher arcing inception voltages. From this it is concluded that corona testing may provide a method of screening the samples.

Skin breakdown in acute care pediatrics.

PubMed

Suddaby, Elizabeth C; Barnett, Scott D; Facteau, Lorna

2006-04-01

The purpose of this study was to develop a simple, single-page measurement tool that evaluates risk of skin breakdown in the peadiatric population and apply it to the acutely hospitalized child. Data were collected over a 15-month period from 347 patients on four in-patient units (PICU, medical-surgical, oncology, and adolescents) on skin breakdown using the AHCPR staging guidelines and compared to the total score on the Starkid SkinScale in order to determine its ability to predict skin breakdown. The inter-rater reliability of the Starkid Skin Scale was r2 = 0.85 with an internal reliablity of 0.71. The sensitivity of the total score was low (17.5%) but highly specific (98.5%). The prevalence of skin breakdown in the acutely hospitalized child was 23%, the majority (77.5%) occurring as erythema of the skin. Buttocks, perineum, and occiput were the most common locations of breakdown. Occiput breakdown was more common in critically ill (PICU) patients while diaper dermatitis was more common in the general medical-surgical population.

Impact of process parameters on the structural and electrical properties of metal/PZT/Al2O3/silicon gate stack for non-volatile memory applications

NASA Astrophysics Data System (ADS)

Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

2018-02-01

In this paper, we present the structural and electrical properties of the Al2O3 buffer layer on non-volatile memory behavior using Metal/PZT/Al2O3/Silicon structures. Metal/PZT/Silicon and Metal/Al2O3/Silicon structures were also fabricated and characterized to obtain capacitance and leakage current parameters. Lead zirconate titanate (PZT::35:65) and Al2O3 films were deposited by sputtering on the silicon substrate. Memory window, PUND, endurance, breakdown voltage, effective charges, flat-band voltage and leakage current density parameters were measured and the effects of process parameters on the structural and electrical characteristics were investigated. X-ray data show dominant (110) tetragonal phase of the PZT film, which crystallizes at 500 °C. The sputtered Al2O3 film annealed at different temperatures show dominant (312) orientation and amorphous nature at 425 °C. Multiple angle laser ellipsometric analysis reveals the temperature dependence of PZT film refractive index and extinction coefficient. Electrical characterization shows the maximum memory window of 3.9 V and breakdown voltage of 25 V for the Metal/Ferroelectric/Silicon (MFeS) structures annealed at 500 °C. With 10 nm Al2O3 layer in the Metal/Ferroelectric/Insulator/Silicon (MFeIS) structure, the memory window and breakdown voltage was improved to 7.21 and 35 V, respectively. Such structures show high endurance with no significant reduction polarization charge for upto 2.2 × 109 iteration cycles.

Amplitude−temporal characteristics of a supershort avalanche electron beam generated during subnanosecond breakdown in air and nitrogen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tarasenko, V. F., E-mail: vft@loi.hcei.tsc.ru; Baksht, E. Kh.; Beloplotov, D. V.

2016-04-15

The amplitude−temporal characteristics of a supershort avalanche electron beam (SAEB) with an amplitude of up to 100 A, as well as of the breakdown voltage and discharge current, are studied experimentally with a picosecond time resolution. The waveforms of discharge and SAEB currents are synchronized with those of the voltage pulses. It is shown that the amplitude−temporal characteristics of the SAEB depend on the gap length and the designs of the gas diode and cathode. The mechanism for the generation of runaway electron beams in atmospheric-pressure gases is analyzed on the basis of the obtained experimental data.

Amplitude-temporal characteristics of a supershort avalanche electron beam generated during subnanosecond breakdown in air and nitrogen

NASA Astrophysics Data System (ADS)

Tarasenko, V. F.; Baksht, E. Kh.; Beloplotov, D. V.; Burachenko, A. G.; Lomaev, M. I.

2016-04-01

The amplitude-temporal characteristics of a supershort avalanche electron beam (SAEB) with an amplitude of up to 100 A, as well as of the breakdown voltage and discharge current, are studied experimentally with a picosecond time resolution. The waveforms of discharge and SAEB currents are synchronized with those of the voltage pulses. It is shown that the amplitude-temporal characteristics of the SAEB depend on the gap length and the designs of the gas diode and cathode. The mechanism for the generation of runaway electron beams in atmospheric-pressure gases is analyzed on the basis of the obtained experimental data.

The breakdown of coordinated decision making in distributed systems.

PubMed

Bearman, Christopher; Paletz, Susannah B F; Orasanu, Judith; Thomas, Matthew J W

2010-04-01

This article aims to explore the nature and resolution of breakdowns in coordinated decision making in distributed safety-critical systems. In safety-critical domains, people with different roles and responsibilities often must work together to make coordinated decisions while geographically distributed. Although there is likely to be a large degree of overlap in the shared mental models of these people on the basis of procedures and experience, subtle differences may exist. Study 1 involves using Aviation Safety Reporting System reports to explore the ways in which coordinated decision making breaks down between pilots and air traffic controllers and the way in which the breakdowns are resolved. Study 2 replicates and extends those findings with the use of transcripts from the Apollo 13 National Aeronautics and Space Administration space mission. Across both studies, breakdowns were caused in part by different types of lower-level breakdowns (or disconnects), which are labeled as operational, informational, or evaluative. Evaluative disconnects were found to be significantly harder to resolve than other types of disconnects. Considering breakdowns according to the type of disconnect involved appears to capture useful information that should assist accident and incident investigators. The current trend in aviation of shifting responsibilities and providing increasingly more information to pilots may have a hidden cost of increasing evaluative disconnects. The proposed taxonomy facilitates the investigation of breakdowns in coordinated decision making and draws attention to the importance of considering subtle differences between participants' mental models when considering complex distributed systems.

A study of metalized electrode self-clearing in electroactive polymer (EAP) based actuators

NASA Astrophysics Data System (ADS)

Ahmed, Saad; Ounaies, Zoubeida

2016-04-01

Electroactive polymer (EAP) based technologies have shown promise in areas such as artificial muscles, actuator, aerospace, medical and soft robotics. Still challenges remain such as low induced forces and defects-driven electrical breakdown, which impede the practical implementation of this technology. Multilayered or stacked configuration can address the low induced force issue whereas self-clearing can be a technique to improve breakdown limit of EAP based actuators. Self-clearing refers to the partial local breakdown of dielectric medium due to the presence of impurities, which in turn results in the evaporation of some of the metalized electrode. After this evaporation, the impurity is cleared and any current path would be safely cut off, which means the actuator continues to perform. It is a widely studied concept in the capacitor community, while it has not been studied much for EAP technologies. In this paper we report a systematic approach to precondition a silver-metalized electroactive polymer (EAP), more specifically P(VDF-TrFE-CTFE) terpolymer, using self-clearing concept. First, we show improvement in the dielectric breakdown strength of EAP based unimorph actuators after pre-clearing the impurities using low electric field (lower than dielectric breakdown of the terpolymer). Inspired by this improvement, we used Weibull statistics to systematically estimate the self-clearing/ preconditioning field needed to clear the defects. Then electrical breakdown experiments are conducted with and without preconditioning the samples to investigate its effect on the breakdown strength of the sample.

Effects of elevated temperature on protein breakdown in muscles from septic rats

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hall-Angeras, M.A.; Angeras, U.H.; Hasselgren, P.O.

Elevated temperature has been proposed to contribute to accelerated muscle protein degradation during fever and sepsis. The present study examined the effect of increased temperature in vitro on protein turnover in skeletal muscles from septic and control rats. Sepsis was induced by cecal ligation and puncture (CLP); control rats were sham operated. After 16 h, the extensor digitorum longus (EDL) and soleus (SOL) muscles were incubated at 37 or 40 degrees C. Protein synthesis was determined by measuring incorporation of (14C)phenylalanine into protein. Total and myofibrillar protein breakdown was assessed from release of tyrosine and 3-methylhistidine (3-MH), respectively. Total proteinmore » breakdown was increased at 40 degrees C by 15% in EDL and by 29% in SOL from control rats, whereas 3-MH release was not affected. In muscles from septic rats, total and myofibrillar protein breakdown was increased by 22 and 30%, respectively, at 40 degrees C in EDL but was not altered in SOL. Protein synthesis was unaffected by high temperature both in septic and nonseptic muscles. The present results suggest that high temperature is not the primary mechanism of increased muscle protein breakdown in sepsis because the typical response to sepsis, i.e., a predominant increase in myofibrillar protein breakdown, was not induced by elevated temperature in normal muscle. It is possible, however, that increased temperature may potentiate protein breakdown that is already stimulated by sepsis because elevated temperature increased both total and myofibrillar protein breakdown in EDL from septic rats.« less

Dielectric breakdown in silica-amorphous polymer nanocomposite films: the role of the polymer matrix.

PubMed

Grabowski, Christopher A; Fillery, Scott P; Westing, Nicholas M; Chi, Changzai; Meth, Jeffrey S; Durstock, Michael F; Vaia, Richard A

2013-06-26

The ultimate energy storage performance of an electrostatic capacitor is determined by the dielectric characteristics of the material separating its conductive electrodes. Polymers are commonly employed due to their processability and high breakdown strength; however, demands for higher energy storage have encouraged investigations of ceramic-polymer composites. Maintaining dielectric strength, and thus minimizing flaw size and heterogeneities, has focused development toward nanocomposite (NC) films; but results lack consistency, potentially due to variations in polymer purity, nanoparticle surface treatments, nanoparticle size, and film morphology. To experimentally establish the dominant factors in broad structure-performance relationships, we compare the dielectric properties for four high-purity amorphous polymer films (polymethyl methacrylate, polystyrene, polyimide, and poly-4-vinylpyridine) incorporating uniformly dispersed silica colloids (up to 45% v/v). Factors known to contribute to premature breakdown-field exclusion and agglomeration-have been mitigated in this experiment to focus on what impact the polymer and polymer-nanoparticle interactions have on breakdown. Our findings indicate that adding colloidal silica to higher breakdown strength amorphous polymers (polymethyl methacrylate and polyimide) causes a reduction in dielectric strength as compared to the neat polymer. Alternatively, low breakdown strength amorphous polymers (poly-4-vinylpyridine and especially polystyrene) with comparable silica dispersion show similar or even improved breakdown strength for 7.5-15% v/v silica. At ∼15% v/v or greater silica content, all the polymer NC films exhibit breakdown at similar electric fields, implying that at these loadings failure becomes independent of polymer matrix and is dominated by silica.

Power supply system for negative ion source at IPR

NASA Astrophysics Data System (ADS)

Gahlaut, Agrajit; Sonara, Jashwant; Parmar, K. G.; Soni, Jignesh; Bandyopadhyay, M.; Singh, Mahendrajit; Bansal, Gourab; Pandya, Kaushal; Chakraborty, Arun

2010-02-01

The first step in the Indian program on negative ion beams is the setting up of Negative ion Experimental Assembly - RF based, where 100 kW of RF power shall be coupled to a plasma source producing plasma of density ~5 × 1012 cm-3, from which ~ 10 A of negative ion beam shall be produced and accelerated to 35 kV, through an electrostatic ion accelerator. The experimental system is modelled similar to the RF based negative ion source, BATMAN presently operating at IPP, Garching, Germany. The mechanical system for Negative Ion Source Assembly is close to the IPP source, remaining systems are designed and procured principally from indigenous sources, keeping the IPP configuration as a base line. High voltage (HV) and low voltage (LV) power supplies are two key constituents of the experimental setup. The HV power supplies for extraction and acceleration are rated for high voltage (~15 to 35kV), and high current (~ 15 to 35A). Other attributes are, fast rate of voltage rise (< 5ms), good regulation (< ±1%), low ripple (< ±2%), isolation (~50kV), low energy content (< 10J) and fast cut-off (< 100μs). The low voltage (LV) supplies required for biasing and providing heating power to the Cesium oven and the plasma grids; have attributes of low ripple, high stability, fast and precise regulation, programmability and remote operation. These power supplies are also equipped with over-voltage, over-current and current limit (CC Mode) protections. Fault diagnostics, to distinguish abnormal rise in currents (breakdown faults) with over-currents is enabled using fast response breakdown and over-current protection scheme. To restrict the fault energy deposited on the ion source, specially designed snubbers are implemented in each (extraction and acceleration) high voltage path to swap the surge energy. Moreover, the monitoring status and control signals from these power supplies are required to be electrically (~ 50kV) isolated from the system. The paper shall present the design basis, topology selection, manufacturing, testing, commissioning, integration and control strategy of these HVPS. A complete power interconnection scheme, which includes all protective devices and measuring devices, low & high voltage power supplies, monitoring and control signals etc. shall also be discussed. The paper also discusses the protocols involved in grounding and shielding, particularly in operating the system in RF environment.

Leakage current conduction, hole injection, and time-dependent dielectric breakdown of n-4H-SiC MOS capacitors during positive bias temperature stress

NASA Astrophysics Data System (ADS)

Samanta, Piyas; Mandal, Krishna C.

2017-01-01

The conduction mechanism(s) of gate leakage current JG through thermally grown silicon dioxide (SiO2) films on the silicon (Si) face of n-type 4H-silicon carbide (4H-SiC) has been studied in detail under positive gate bias. It was observed that at an oxide field above 5 MV/cm, the leakage current measured up to 303 °C can be explained by Fowler-Nordheim (FN) tunneling of electrons from the accumulated n-4H-SiC and Poole-Frenkel (PF) emission of trapped electrons from the localized neutral traps located at ≈2.5 eV below the SiO2 conduction band. However, the PF emission current IPF dominates the FN electron tunneling current IFN at oxide electric fields Eox between 5 and 10 MV/cm and in the temperature ranging from 31 to 303 °C. In addition, we have presented a comprehensive analysis of injection of holes and their subsequent trapping into as-grown oxide traps eventually leading to time-dependent dielectric breakdown during electron injection under positive bias temperature stress (PBTS) in n-4H-SiC metal-oxide-silicon carbide structures. Holes were generated in the heavily doped n-type polycrystalline silicon (n+-polySi) gate (anode) as well as in the oxide bulk via band-to-band ionization by the hot-electrons depending on their energy and SiO2 film thickness at Eox between 6 and 10 MV/cm (prior to the intrinsic oxide breakdown field). Transport of hot electrons emitted via both FN and PF mechanisms was taken into account. On the premise of the hole-induced oxide breakdown model, the time- and charge-to-breakdown ( tBD and QBD ) of 8.5 to 47 nm-thick SiO2 films on n-4H-SiC were estimated at a wide range of temperatures. tBD follows the Arrhenius law with activation energies varying inversely with initial applied constant field Eox supporting the reciprocal field ( 1 /E ) model of breakdown irrespective of SiO2 film thicknesses. We obtained an excellent margin (6.66 to 6.33 MV/cm at 31 °C and 5.11 to 4.55 MV/cm at 303 °C) of normal operating field for a 10-year projected lifetime of 8.5 to 47 nm-thick SiO2 films on n-4H-SiC under positive bias on the n+-polySi gate. Furthermore, the projected maximum operating oxide field was little higher in metal gate devices compared to n+-polySi gate devices having an identically thick thermal SiO2 films under PBTS.

Specific Localization of High-Voltage Discharge in Vicinity of Two Gases

NASA Astrophysics Data System (ADS)

Leonov, Sergey; Shurupov, Michail; Shneider, Michail; Napartovich, Anatoly; Kochetov, Igor

2011-10-01

A subject of paper is the appearance and dynamics of sub-microsecond long filamentary high-voltage discharge generated in atmosphere, and in non-homogeneous gaseous media. Typical discharge parameters are: maximal current 1-3kA, breakdown voltage >100 kV, duration 30-100 ns, gap distance 50-100mm. The effect of discharge specific localization within mixing layer of two gases is particularly discussed. The second discussed idea is the filamentary discharge movement within a region with concentration gradient of different components. For the short-pulse discharge the physical mechanism appears as the following. The first stage of the spark breakdown is the multiple streamers propagation from the high-voltage electrode toward the grounded one. In case of high-power electrical source those streamers occupy a huge volume of the gas, covering all possible paths for the further development. The next phase consists of the real selection of the discharge path among the multiple channels with non-zero conductivity. Experiments and calculations are presented for Air-CO2 and Air-C2H4 pairs. The effects found are supposed to be applied for lightning prediction/protection, and for high-speed mixing acceleration. The work was funded through EOARD-ISTC project #3793p. Some part of this work was supported by RFBR grant #10-08-00952.

Dynamic of microwave breakdown in the localized places of transmitting line driving by Cherenkov-type oscillator

NASA Astrophysics Data System (ADS)

Xie, Jialing; Chen, Changhua; Chang, Chao; Wu, Cheng; Shi, Yanchao; Cao, Yibing; Song, Zhimin; Zhang, Yuchuan

2018-02-01

A breakdown cavity is designed to study the breakdown phenomena of high-power microwaves in transmission waveguides. The maximum electric field within the cavity varies in amplitude from 400 kV/cm to 1.8 MV/cm and may surpass breakdown thresholds. The breakdown cavities were studied in particle-in-cell simulations and experiments, the results of which yielded waveforms that were consistent. The experimental results indicate that the microwave pulse does not shorten, and the amplitude of the electric field does not fall below 800 kV/cm. Moreover, large numbers of electrons are not emitted in microwaves below 670 kV/cm at 9.75 GHz frequency and 25-ns pulse width transmitted in stainless steel waveguides. The radiation waveforms of breakdown cavity with different materials are compared in experiments, with titanium material performing better.

The effect of external visible light on the breakdown voltage of a long discharge tube

NASA Astrophysics Data System (ADS)

Shishpanov, A. I.; Ionikh, Yu. Z.; Meshchanov, A. V.

2016-06-01

The breakdown characteristics of a discharge tube with a configuration typical of gas-discharge light sources and electric-discharge lasers (a so-called "long discharge tube") filled with argon or helium at a pressure of 1 Torr have been investigated. A breakdown has been implemented using positive and negative voltage pulses with a linear leading edge having a slope dU/ dt ~ 10-107 V/s. Visible light from an external source (halogen incandescent lamp) is found to affect the breakdown characteristics. The dependences of the dynamic breakdown voltage of the tube on dU/ dt and on the incident light intensity are measured. The breakdown voltage is found to decrease under irradiation of the high-voltage anode of the tube in a wide range of dU/ dt. A dependence of the effect magnitude on the light intensity and spectrum is obtained. Possible physical mechanisms of this phenomenon are discussed.

Suppressing the cellular breakdown in silicon supersaturated with titanium

NASA Astrophysics Data System (ADS)

Liu, Fang; Prucnal, S.; Hübner, R.; Yuan, Ye; Skorupa, W.; Helm, M.; Zhou, Shengqiang

2016-06-01

Hyper doping Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted Si layer can be well recrystallized by liquid phase epitaxy and solid phase epitaxy, respectively. Cross-sectional transmission electron microscopy of Ti-implanted Si after liquid phase epitaxy shows the so-called growth interface breakdown or cellular breakdown owing to the occurrence of constitutional supercooling in the melt. The appearance of cellular breakdown prevents further recrystallization. However, the out-diffusion and cellular breakdown can be effectively suppressed by solid phase epitaxy during flash lamp annealing due to the high velocity of amorphous-crystalline interface and the low diffusion velocity for Ti in the solid phase.

Prediction of breakdown strength of cellulosic insulating materials using artificial neural networks

NASA Astrophysics Data System (ADS)

Singh, Sakshi; Mohsin, M. M.; Masood, Aejaz

In this research work, a few sets of experiments have been performed in high voltage laboratory on various cellulosic insulating materials like diamond-dotted paper, paper phenolic sheets, cotton phenolic sheets, leatheroid, and presspaper, to measure different electrical parameters like breakdown strength, relative permittivity, loss tangent, etc. Considering the dependency of breakdown strength on other physical parameters, different Artificial Neural Network (ANN) models are proposed for the prediction of breakdown strength. The ANN model results are compared with those obtained experimentally and also with the values already predicted from an empirical relation suggested by Swanson and Dall. The reported results indicated that the breakdown strength predicted from the ANN model is in good agreement with the experimental values.

Development and simulation study of a new inverse-pinch high Coulomb transfer switch

NASA Technical Reports Server (NTRS)

Choi, Sang H.

1989-01-01

The inverse-pinch plasma switch was studied using a computer simulation code. The code was based on a 2-D, 2-temperature magnetohydrodynamic (MHD) model. The application of this code was limited to the disk-type inverse-pinch plasma switch. The results of the computer analysis appear to be in agreement with the experimental results when the same parameters are used. An inverse-pinch plasma switch for closing has been designed and tested for high-power switching requirements. An azimuthally uniform initiation of breakdown is a key factor in achieving an inverse-pinch current path in the switch. Thus, various types of triggers, such as trigger pins, wire-brush, ring trigger, and hypocycloidal-pinch (HCP) devices have been tested for uniform breakdown. Recently, triggering was achieved by injection of a plasma-ring (plasma puff) that is produced separately with hypocycloidal-pinch electrodes placed under the cathode of the main gap. The current paths at switch closing, initiated by the injection of a plasma-ring from the HCP trigger are azimuthally uniform, and the local current density is significantly reduced, so that damage to the electrodes and the insulator surfaces is minimized. The test results indicate that electron bombardment on the electrodes and the insulator surfaces is minimized. The test results indicate that electron bombardment on the electrodes is four orders of magnitude less than that of a spark-gap switch for the same switching power. Indeed, a few thousand shots with peak current exceeding a mega-ampere and with hold-off voltage up to 20 kV have been conducted without showing measurable damage to the electrodes and insulators.

Influence of a surface film on the particles on the electrorheological response

NASA Astrophysics Data System (ADS)

Wu, C. W.; Conrad, H.

1997-01-01

A conduction model is developed for the dc electrorheological (ER) response of highly conducting particles (e.g., metal particles) suspended in a weakly conducting oil. The numerical analyses show that a surface film with some conductivity is desired, but not a completely insulating film as previously proposed. Increasing the film conductivity leads to an increase in the ER yield stress. However, too high a conductivity will give an unacceptable level of current density. The film should also have an intermediate thickness. A small thickness increases the possibility of electrical breakdown in the film; too large a thickness decreases the ER effect. Good agreement exists between the yield stress and the current density predicted by our model and those measured.

Amorphous Boron Nitride: A Universal, Ultrathin Dielectric for 2D Nanoelectronics (Postprint)

DTIC Science & Technology

2015-03-21

the C-AFM technique using the linear breakdown method when the current reaches 1 nA. [ 44 ] The breakdown is characterized by a sharp increase in...423 . [15] K. Watanabe , T. Taniguchi , H. Kanda , Nat. Mater. 2004 , 3 , 404 . [16] A. Soltani , A. Talbi , V. Mortet , A...Phys. Lett. 2011 , 99 , 243114 . [36] Y. Hattori , T. Taniguchi , K. Watanabe , K. Nagashio , ACS Nano 2014 , 9 , 916 . [37] S. N

Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate

NASA Astrophysics Data System (ADS)

Choi, J.-H.; Cho, C.-H.; Cha, H.-Y.

2018-06-01

Gallium oxide (Ga2O3) based vertical Schottky barrier diodes (SBDs) were designed for high voltage switching applications. Since p-type Ga2O3 epitaxy growth or p-type ion implantation technique has not been developed yet, a field plate structure was employed in this study to maximize the breakdown voltage by suppressing the electric field at the anode edge. TCAD simulation was used for the physical analysis of Ga2O3 SBDs from which it was found that careful attention must be paid to the insulator under the field plate. Due to the extremely high breakdown field property of Ga2O3, an insulator with both high permittivity and high breakdown field must be used for the field plate formation.

Dynamic Fault Detection Chassis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mize, Jeffery J

2007-01-01

Abstract The high frequency switching megawatt-class High Voltage Converter Modulator (HVCM) developed by Los Alamos National Laboratory for the Oak Ridge National Laboratory's Spallation Neutron Source (SNS) is now in operation. One of the major problems with the modulator systems is shoot-thru conditions that can occur in a IGBTs H-bridge topology resulting in large fault currents and device failure in a few microseconds. The Dynamic Fault Detection Chassis (DFDC) is a fault monitoring system; it monitors transformer flux saturation using a window comparator and dV/dt events on the cathode voltage caused by any abnormality such as capacitor breakdown, transformer primarymore » turns shorts, or dielectric breakdown between the transformer primary and secondary. If faults are detected, the DFDC will inhibit the IGBT gate drives and shut the system down, significantly reducing the possibility of a shoot-thru condition or other equipment damaging events. In this paper, we will present system integration considerations, performance characteristics of the DFDC, and discuss its ability to significantly reduce costly down time for the entire facility.« less

High harmonic interferometry of the Lorentz force in strong mid-infrared laser fields

NASA Astrophysics Data System (ADS)

Pisanty, Emilio; Hickstein, Daniel D.; Galloway, Benjamin R.; Durfee, Charles G.; Kapteyn, Henry C.; Murnane, Margaret M.; Ivanov, Misha

2018-05-01

The interaction of intense mid-infrared laser fields with atoms and molecules leads to a range of new opportunities, from the production of bright, coherent radiation in the soft x-ray range, to imaging molecular structures and dynamics with attosecond temporal and sub-angstrom spatial resolution. However, all these effects, which rely on laser-driven recollision of an electron removed by the strong laser field and its parent ion, suffer from the rapidly increasing role of the magnetic field component of the driving pulse: the associated Lorentz force pushes the electrons off course in their excursion and suppresses all recollision-based processes, including high harmonic generation as well as elastic and inelastic scattering. Here we show how the use of two non-collinear beams with opposite circular polarizations produces a forwards ellipticity which can be used to monitor, control, and cancel the effect of the Lorentz force. This arrangement can thus be used to re-enable recollision-based phenomena in regimes beyond the long-wavelength breakdown of the dipole approximation, and it can be used to observe this breakdown in high harmonic generation using currently available light sources.

Direct Observation of Active Material Concentration Gradients and Crystallinity Breakdown in LiFePO4 Electrodes During Charge/Discharge Cycling of Lithium Batteries.

PubMed

Roberts, Matthew R; Madsen, Alex; Nicklin, Chris; Rawle, Jonathan; Palmer, Michael G; Owen, John R; Hector, Andrew L

2014-04-03

The phase changes that occur during discharge of an electrode comprised of LiFePO 4 , carbon, and PTFE binder have been studied in lithium half cells by using X-ray diffraction measurements in reflection geometry. Differences in the state of charge between the front and the back of LiFePO 4 electrodes have been visualized. By modifying the X-ray incident angle the depth of penetration of the X-ray beam into the electrode was altered, allowing for the examination of any concentration gradients that were present within the electrode. At high rates of discharge the electrode side facing the current collector underwent limited lithium insertion while the electrode as a whole underwent greater than 50% of discharge. This behavior is consistent with depletion at high rate of the lithium content of the electrolyte contained in the electrode pores. Increases in the diffraction peak widths indicated a breakdown of crystallinity within the active material during cycling even during the relatively short duration of these experiments, which can also be linked to cycling at high rate.

Direct Observation of Active Material Concentration Gradients and Crystallinity Breakdown in LiFePO4 Electrodes During Charge/Discharge Cycling of Lithium Batteries

PubMed Central

2014-01-01

The phase changes that occur during discharge of an electrode comprised of LiFePO4, carbon, and PTFE binder have been studied in lithium half cells by using X-ray diffraction measurements in reflection geometry. Differences in the state of charge between the front and the back of LiFePO4 electrodes have been visualized. By modifying the X-ray incident angle the depth of penetration of the X-ray beam into the electrode was altered, allowing for the examination of any concentration gradients that were present within the electrode. At high rates of discharge the electrode side facing the current collector underwent limited lithium insertion while the electrode as a whole underwent greater than 50% of discharge. This behavior is consistent with depletion at high rate of the lithium content of the electrolyte contained in the electrode pores. Increases in the diffraction peak widths indicated a breakdown of crystallinity within the active material during cycling even during the relatively short duration of these experiments, which can also be linked to cycling at high rate. PMID:24790684

Longitudinal vortex control - Techniques and applications (The 32nd Lanchester Lecture)

NASA Technical Reports Server (NTRS)

Bushnell, D. M.

1992-01-01

A summary is presented of vortex control applications and current techniques for the control of longitudinal vortices produced by bodies, leading edges, tips and intersections. Vortex control has up till now been performed by many approaches in an empirical fashion, assisted by the essentially inviscid nature of much of longitudinal vortex behavior. Attention is given to Reynolds number sensitivities, vortex breakdown and interactions, vortex control on highly swept wings, and vortex control in juncture flows.

Feasibility of producing a short, high energy s-band linear accelerator using a klystron power source.

PubMed

Baillie, Devin; St Aubin, J; Fallone, B G; Steciw, S

2013-04-01

To use a finite-element method (FEM) model to study the feasibility of producing a short s-band (2.9985 GHz) waveguide capable of producing x-rays energies up to 10 MV, for applications in a linac-MR, as well as conventional radiotherapy. An existing waveguide FEM model developed by the authors' group is used to simulate replacing the magnetron power source with a klystron. Peak fields within the waveguide are compared with a published experimental threshold for electric breakdown. The RF fields in the first accelerating cavity are scaled, approximating the effect of modifications to the first coupling cavity. Electron trajectories are calculated within the RF fields, and the energy spectrum, beam current, and focal spot of the electron beam are analyzed. One electron spectrum is selected for Monte Carlo simulations and the resulting PDD compared to measurement. When the first cavity fields are scaled by a factor of 0.475, the peak magnitude of the electric fields within the waveguide are calculated to be 223.1 MV∕m, 29% lower than the published threshold for breakdown at this operating frequency. Maximum electron energy increased from 6.2 to 10.4 MeV, and beam current increased from 134 to 170 mA. The focal spot FWHM is decreased slightly from 0.07 to 0.05 mm, and the width of the energy spectrum increased slightly from 0.44 to 0.70 MeV. Monte Carlo results show dmax is at 2.15 cm for a 10 × 10 cm(2) field, compared with 2.3 cm for a Varian 10 MV linac, while the penumbral widths are 4.8 and 5.6 mm, respectively. The authors' simulation results show that a short, high-energy, s-band accelerator is feasible and electric breakdown is not expected to interfere with operation at these field strengths. With minor modifications to the first coupling cavity, all electron beam parameters are improved.

Investigation of the delay time distribution of high power microwave surface flashover

NASA Astrophysics Data System (ADS)

Foster, J.; Krompholz, H.; Neuber, A.

2011-01-01

Characterizing and modeling the statistics associated with the initiation of gas breakdown has proven to be difficult due to a variety of rather unexplored phenomena involved. Experimental conditions for high power microwave window breakdown for pressures on the order of 100 to several 100 torr are complex: there are little to no naturally occurring free electrons in the breakdown region. The initial electron generation rate, from an external source, for example, is time dependent and so is the charge carrier amplification in the increasing radio frequency (RF) field amplitude with a rise time of 50 ns, which can be on the same order as the breakdown delay time. The probability of reaching a critical electron density within a given time period is composed of the statistical waiting time for the appearance of initiating electrons in the high-field region and the build-up of an avalanche with an inherent statistical distribution of the electron number. High power microwave breakdown and its delay time is of critical importance, since it limits the transmission through necessary windows, especially for high power, high altitude, low pressure applications. The delay time distribution of pulsed high power microwave surface flashover has been examined for nitrogen and argon as test gases for pressures ranging from 60 to 400 torr, with and without external UV illumination. A model has been developed for predicting the discharge delay time for these conditions. The results provide indications that field induced electron generation, other than standard field emission, plays a dominant role, which might be valid for other gas discharge types as well.

High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure

NASA Astrophysics Data System (ADS)

Yan, Xiaodong; Esqueda, Ivan S.; Ma, Jiahui; Tice, Jesse; Wang, Han

2018-01-01

In this work, we study the high critical breakdown field in β-Ga2O3 perpendicular to its (100) crystal plane using a β-Ga2O3/graphene vertical heterostructure. Measurements indicate a record breakdown field of 5.2 MV/cm perpendicular to the (100) plane that is significantly larger than the previously reported values on lateral β-Ga2O3 field-effect-transistors (FETs). This result is compared with the critical field typically measured within the (100) crystal plane, and the observed anisotropy is explained through a combined theoretical and experimental analysis.

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ťapajna, M., E-mail: milan.tapajna@savba.sk; Kuzmík, J.; Hilt, O.

2015-11-09

Gate diode conduction mechanisms were analyzed in normally-off p-GaN/AlGaN/GaN high-electron mobility transistors grown on Si wafers before and after forward bias stresses. Electrical characterization of the gate diodes indicates forward current to be limited by channel electrons injected through the AlGaN/p-GaN triangular barrier promoted by traps. On the other hand, reverse current was found to be consistent with carrier generation-recombination processes in the AlGaN layer. Soft breakdown observed after ∼10{sup 5 }s during forward bias stress at gate voltage of 7 V was attributed to formation of conductive channel in p-GaN/AlGaN gate stack via trap generation and percolation mechanism, likely due tomore » coexistence of high electric field and high forward current density. Possible enhancement of localized conductive channels originating from spatial inhomogeneities is proposed to be responsible for the degradation.« less

High stored-energy breakdown tests on electrodes made of stainless steel, copper, titanium and molybdenum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Esch, H. P. L. de, E-mail: hubert.de-esch@cea.fr; Simonin, A.; Grand, C.

2015-04-08

IRFM have conducted resilience tests on electrodes made of Cu, stainless steel 304L, Ti and Mo against breakdowns up to 170 kV and 300 J. The tests of the 10×10 cm{sup 2} electrodes have been performed at an electrode distance d=11 mm under vacuum (P∼5×10{sup −6} mbar). No great difference in voltage holding between the materials could be identified; all materials could reach a voltage holding between 140 and 170 kV over the 11 mm gap, i.e. results scatter within a ±10% band. After exposure to ∼10000 seconds of high-voltage (HV) on-time, having accumulated ∼1000 breakdowns, the electrodes were inspected. The anodes were covered with largemore » and small craters. The rugosity of the anodes had increased substantially, that of the cathodes to a lesser extent. The molybdenum electrodes are least affected, but this does not show in their voltage holding capability. It is hypothesized that penetrating high-energy electrons from the breakdown project heat below the surface of the anode and cause a micro-explosion of material when melting point is exceeded. Polished electrodes have also been tested. The polishing results in a substantially reduced breakdown rate in the beginning, but after having suffered a relatively small number (∼100) of breakdowns, the polished electrodes behaved the same as the unpolished ones.« less

Performance and Reliability of Solid Tantalum Capacitors at Cryogenic Conditions

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2006-01-01

Performance of different types of solid tantalum capacitors was evaluated at room and low temperatures, down to 15 K. The effect of temperature on frequency dependencies of capacitance, effective series resistances (ESR), leakage currents, and breakdown voltages has been investigated and analyzed. To assess thermo-mechanical robustness of the parts, several groups of loose capacitors and those soldered on FR4 boards were subjected to multiple (up to 500) temperature cycles between room temperature and 77 K. Experiments and mathematical modeling have shown that degradation in tantalum capacitors at low temperatures is mostly due to increasing resistance of the manganese cathode layer, resulting in substantial decrease of the roll-off frequency. Absorption currents follow a power law, I approximately t(sup -m), with the exponent m varying from 0.8 to 1.1. These currents do not change significantly at cryogenic conditions and the value of the exponent remains the same down to 15 K. Variations of leakage currents with voltage can be described by Pool-Frenkel and Schottky mechanisms of conductivity, with the Schottky mechanism prevailing at cryogenic conditions. Breakdown voltages of tantalum capacitors increase and the probability of scintillations decreases at cryogenic temperatures. However, breakdown voltages measured during surge current testing decrease at liquid nitrogen (LN) compared to room-temperature conditions. Results of temperature cycling suggest that tantalum capacitors are capable of withstanding multiple exposures to cryogenic conditions, but the probability of failures varies for different part types.

Temperature peaking at beginning of breakdown in 2.45 GHz pulsed off-resonance electron cyclotron resonance ion source hydrogen plasma

NASA Astrophysics Data System (ADS)

Cortázar, O. D.; Megía-Macías, A.; Vizcaíno-de-Julián, A.

2012-10-01

An experimental study of temperature and density evolution during breakdown in off-resonance ECR hydrogen plasma is presented. Under square 2.45 GHz microwave excitation pulses with a frequency of 50 Hz and relative high microwave power, unexpected transient temperature peaks that reach 18 eV during 20 μs are reported at very beginning of plasma breakdown. Decays of such peaks reach final stable temperatures of 5 eV at flat top microwave excitation pulse. Evidence of interplay between incoming power and duty cycle giving different kind of plasma parameters evolutions engaged to microwave coupling times is observed. Under relative high power conditions where short microwave coupling times are recorded, high temperature peaks are measured. However, for lower incoming powers and longer coupling times, temperature evolves gradually to a higher final temperature without peaking. On the other hand, the early instant where temperature peaks are observed also suggest a possible connection with preglow processes during breakdown in ECRIS plasmas.

Performance Breakdown in Sport: The Roles of Reinvestment and Verbal Knowledge

ERIC Educational Resources Information Center

Maxwell, J. P.; Masters, R. S. W.; Poolton, J. M.

2006-01-01

Optimal performance is the goal of all athletes, particularly when rewards are high. However, in pressure situations, many athletes perform suboptimally despite a high motivation to succeed. One of the more popular theories addressing performance breakdown under stress implicates self-focused attention. Attention directed to the self may interfere…

On the impact of self-clearing on electroactive polymer (EAP) actuators

NASA Astrophysics Data System (ADS)

Ahmed, Saad; Ounaies, Zoubeida; Lanagan, Michael T.

2017-10-01

Electroactive polymer (EAP)-based actuators have large potential for a wide array of applications; however, their practical implementation is still a challenge because of the requirement of high driving voltage, which most often leads to premature defect-driven electrical breakdown. Polymer-based capacitors have the ability to clear defects with partial electrical breakdown and subsequent removal of a localized electrode section near the defect. In this study, this process, which is known as self-clearing, is adopted for EAP technologies. We report a methodical approach to self-clear an EAP, more specifically P(VDF-TrFE-CTFE) terpolymer, to delay premature defect-driven electrical breakdown of the terpolymer actuators at high operating electric fields. Breakdown results show that electrical breakdown strength is improved up to 18% in comparison to a control sample after self-clearing. Furthermore, the electromechanical performance in terms of blocked force and free displacement of P(VDF-TrFE-CTFE) terpolymer-based bending actuators are examined after self-clearing and precleared samples show improved blocked force, free displacement and maximum sustainable electric field compared to control samples. The study demonstrates that controlled self-clearing of EAPs improves the breakdown limit and reliability of the EAP actuators for practical applications without impeding their electromechanical performance.

High Voltage, Sub Nanosecond Feedthrough Design for Liquid Breakdown Studies

NASA Astrophysics Data System (ADS)

Cevallos, Michael; Dickens, James; Neuber, Andreas; Krompholz, Herman

2002-12-01

Experiments in self-breakdown mode and pulsed breakdown at high over-voltages in standard electrode geometries are performed for liquids to gain a better understanding of their fundamental breakdown physics. Different liquids of interest include liquids such as super-cooled liquid nitrogen, oils, glycerols and water. A typical setup employs a discharge chamber with a cable discharge into a coaxial system with axial discharge, and a load line to simulate a matched terminating impedance, thus providing a sub-nanosecond response. This study is focused on the feed-through design of the coaxial cable into this type of discharge chamber, with the feed-through being the critical element with respect to maximum hold-off voltage. Diverse feedthroughs were designed and simulated using Maxwell 3-D Field Simulator Version 5. Several geometrically shaped feed-through transitions were simulated, including linearly and exponentially tapered, to minimize electrostatic fields, thus ensuring that the discharge occurs in the volume of interest and not between the inner and outer conductor at the transition from the insulation of the coaxial cable to the liquid. All feedthroughs are designed to match the incoming impedance of the coaxial cable. The size of the feedthroughs will vary from liquid to liquid in order to match the coaxial cable impedance of 50Ω. The discharge chamber has two main ports where the feed-through will enter the chamber. Each feed-through is built through a flange that covers the two main ports. This allows the use of the same discharge chamber for various liquids by changing the flanges on the main ports to match the particular liquid. The feedthroughs were designed and built to withstand voltages of up to 200 kV. The feedthroughs are also fitted with transmission line type current sensors and capacitive voltage dividers with fast amplifiers/attenuators in order to attain a complete range of information from amplitudes of 0.1mA to 1 kA with a temporal resolution of 300 ps.

Interaction dynamics of fs-laser induced cavitation bubbles and their impact on the laser-tissue-interaction of modern ophthalmic laser systems

NASA Astrophysics Data System (ADS)

Tinne, N.; Ripken, T.; Lubatschowski, H.; Heisterkamp, A.

2011-07-01

A today well-known laser based treatment in ophthalmology is the LASIK procedure which nowadays includes cutting of the corneal tissue with ultra-short laser pulses. Instead of disposing a microkeratome for cutting a corneal flap, a focused ultra-short laser pulse is scanned below the surface of biological tissue causing the effect of an optical breakdown and hence obtaining a dissection. Inside the tissue, the energy of the laser pulses is absorbed by non-linear processes; as a result a cavitation bubble expands and ruptures the tissue. Hence, positioning of several optical breakdowns side by side generates an incision. Due to a reduction of the amount of laser energy, with a moderate duration of treatment at the same time, the current development of ultra-short pulse laser systems points to higher repetition rates in the range of even Megahertz instead of tens or hundreds of Kilohertz. In turn, this results in a pulse overlap and therefor a probable occurrence of interaction between different optical breakdowns and respectively cavitation bubbles of adjacent optical breakdowns. While the interaction of one single laser pulse with biological tissue is analyzed reasonably well experimentally and theoretically, the interaction of several spatial and temporal following pulses is scarcely determined yet. Thus, the aim of this study is to analyse the dynamic and interaction of two cavitation bubbles by using high speed photography. The applied laser pulse energy, the energy ratio and the spot distance between different cavitation bubbles were varied. Depending on a change of these parameters different kinds of interactions such as a flattening and deformation of bubble shape or jet formation are observed. The effects will be discussed regarding the medical ophthalmic application of fs-lasers. Based on these results a further research seems to be inevitable to comprehend and optimize the cutting effect of ultra-short pulse laser systems with high (> 500 kHz) repetition rates.

Prediction of TARANIS Observations of TGF's and Optical Emissions from Red Sprites

NASA Astrophysics Data System (ADS)

Nelson, M. A.

2006-12-01

TARANIS (Tool for the Analysis of Radiation from Lightning and Sprites) is a French (CNES, Centre National D'Etudes Spatiales) micro-satellite that is scheduled for launch in 2009. This will be the first satellite that will measure coincident gamma-rays and optical emissions from atmospheric discharges. These measurements will provide important clues concerning the physics of discharges that produce gamma-rays and will provide more definitive evidence of the role of conventional breakdown versus runaway breakdown than is currently available. While a variety of discharges may be associated with Transient Gamma Ray Flashes (TGF's), this study will focus on emissions expected from red sprites. Future studies will focus on other types of discharges (for example, gigantic jets or blue jets) to see whether they should produce detectable signal levels at both gamma-ray and optical frequencies. The source of terrestrial TGF's is a matter of debate at this time. Many experts in the field have interpreted the data associated with the RHESSI (Reuven Ramaty High Energy Solar Spectroscopic Imager) satellite to be indicative that the discharges associated with terrestrial gamma-rays are not associated with sprites. However, RHESSI was not designed for the purpose of collecting gamma-ray measurements from terrestrial discharges; does not possess a coincident optical measurement capability; and must average data over many events to predict a spectrum. We will present a statistical analysis of the relative efficiencies of the RHESSI and TARANIS satellite designs for the detection of TGF's associated with sprites. We will show results from a fully 2-D electromagnetic model (UNIMAX, the Unified Maxwell code) and an optical model (POEM, the Physics Based Optical Emission Model) to demonstrate the level of agreement between the simulations and the gamma-ray spectrum measurements and optical measurements (camera, photometer, and spectral measurements) for several different classes of discharges (halos, streamers, and runaway breakdown.) We will distinguish which measurements and model results are indicative of conventional breakdown and which are indicative of runaway breakdown.

Current collection by high voltage anodes in near ionospheric conditions

NASA Technical Reports Server (NTRS)

Antoniades, John A.; Greaves, Rod G.; Boyd, D. A.; Ellis, R.

1990-01-01

The authors experimentally identified three distinct regimes with large differences in current collection in the presence of neutrals and weak magnetic fields. In magnetic field/anode voltage space the three regions are separated by very sharp transition boundaries. The authors performed a series of laboratory experiments to study the dependence of the region boundaries on several parameters, such as the ambient neutral density, plasma density, magnetic field strength, applied anode voltage, voltage pulsewidth, chamber material, chamber size and anode radius. The three observed regimes are: classical magnetic field limited collection; stable medium current toroidal discharge; and large scale, high current space glow discharge. There is as much as several orders of magnitude of difference in the amount of collected current upon any boundary crossing, particularly if one enters the space glow regime. They measured some of the properties of the plasma generated by the breakdown that is present in regimes II and III in the vicinity of the anode including the sheath modified electrostatic potential, I-V characteristics at high voltage as well as the local plasma density.

Reliable Breakdown Obtained in Silicon Carbide Rectifiers

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1997-01-01

The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Monitoring engineered remediation with borehole radar

USGS Publications Warehouse

Lane, J.W.; Day-Lewis, F. D.; Joesten, P.K.

2007-01-01

The success of engineered remediation is predicated on correct emplacement of either amendments (e.g., vegetable-oil emulsion, lactate, molasses, etc.) or permeable reactive barriers (e.g., vegetable oil, zero-valent iron, etc.) to enhance microbial or geochemical breakdown of contaminants and treat contaminants. Currently, site managers have limited tools to provide information about the distribution of injected materials; the existence of gaps or holes in barriers; and breakdown or transformation of injected materials over time. ?? 2007 Society of Exploration Geophysicists.

Characterization of Current Tower Cab Environments

DOT National Transportation Integrated Search

1977-11-01

This report describes the general tower cab environment in terms of: (a) the evolution of the tower cab, current cab classification and staffing levels, and the basic flow of ATC data relevant to cab operations, (b) a breakdown of functions performed...

Significantly improved dielectric performances of nanocomposites via loading two-dimensional core-shell structure Bi2Te3@SiO2 nanosheets

NASA Astrophysics Data System (ADS)

Chen, Jianwen; Wang, Xiucai; Yu, Xinmei; Fan, Yun; Duan, Zhikui; Jiang, Yewen; Yang, Faquan; Zhou, Yuexia

2018-07-01

Polymer/semiconductor-insulator nanocomposites can display high dielectric constants with a relatively low dissipation factor under low electric fields, and thus seem to promising for high energy density capacitors. Here, a novel nanocomposite films is developed by loading two-dimensional (2D) core-shell structure Bi2Te3@SiO2 nanosheets in the poly (vinylidene fluoride-hexafluoro propylene) (P(VDF-HFP)) polymer matrix. The 2D Bi2Te3 nanosheets were prepared through simple microwave-assisted method. The experimental results suggesting that the SiO2 shell layer between the fillers and polymer matrix could effectively improve the dielectric constant, dielectric loss, AC conductivity, and breakdown strength of composites films. The composite films load with 10 vol.% 2D Bi2Te3@SiO2 nanosheets exhibits a high dielectric constant of 70.3 at 1 kHz and relatively low dielectric loss of 0.058 at 1 kHz. The finite element simulation of electric field and electric current density distribution revealed that the SiO2 shell layer between the fillers and polymer matrix could effectively improve the energy loss, local electric field strength, and breakdown strength of composite films. Therefore, this work will provide a promising route to achieve high-performance capacitors.

Negative Differential Conductance & Hot-Carrier Avalanching in Monolayer WS2 FETs

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, G.; Nathawat, J.; Kwan, C. -P.

The high field phenomena of inter-valley transfer and avalanching breakdown have long been exploited in devices based on conventional semiconductors. In this Article, we demonstrate the manifestation of these effects in atomically-thin WS 2 field-effect transistors. The negative differential conductance exhibits all of the features familiar from discussions of this phenomenon in bulk semiconductors, including hysteresis in the transistor characteristics and increased noise that is indicative of travelling high-field domains. It is also found to be sensitive to thermal annealing, a result that we attribute to the influence of strain on the energy separation of the different valleys involved inmore » hot-electron transfer. This idea is supported by the results of ensemble Monte Carlo simulations, which highlight the sensitivity of the negative differential conductance to the equilibrium populations of the different valleys. At high drain currents (>10 μA/μm) avalanching breakdown is also observed, and is attributed to trap-assisted inverse Auger scattering. This mechanism is not normally relevant in conventional semiconductors, but is possible in WS 2 due to the narrow width of its energy bands. The various results presented here suggest that WS 2 exhibits strong potential for use in hot-electron devices, including compact high-frequency sources and photonic detectors.« less

Negative Differential Conductance & Hot-Carrier Avalanching in Monolayer WS2 FETs

DOE PAGES

He, G.; Nathawat, J.; Kwan, C. -P.; ...

2017-09-12

The high field phenomena of inter-valley transfer and avalanching breakdown have long been exploited in devices based on conventional semiconductors. In this Article, we demonstrate the manifestation of these effects in atomically-thin WS 2 field-effect transistors. The negative differential conductance exhibits all of the features familiar from discussions of this phenomenon in bulk semiconductors, including hysteresis in the transistor characteristics and increased noise that is indicative of travelling high-field domains. It is also found to be sensitive to thermal annealing, a result that we attribute to the influence of strain on the energy separation of the different valleys involved inmore » hot-electron transfer. This idea is supported by the results of ensemble Monte Carlo simulations, which highlight the sensitivity of the negative differential conductance to the equilibrium populations of the different valleys. At high drain currents (>10 μA/μm) avalanching breakdown is also observed, and is attributed to trap-assisted inverse Auger scattering. This mechanism is not normally relevant in conventional semiconductors, but is possible in WS 2 due to the narrow width of its energy bands. The various results presented here suggest that WS 2 exhibits strong potential for use in hot-electron devices, including compact high-frequency sources and photonic detectors.« less

Extended performance technology study 30-cm thruster

NASA Technical Reports Server (NTRS)

Beattie, J. R.

1983-01-01

The extended performance technology study was an investigation of advanced discharge chambers and thruster components that were designed to operate under conditions which result in an increase in the thrust and thrust to power ratio of the state of the art J-series thruster. The high level of performance was achieved by a discharge chamber that employs a ring cusp magnetic confinement arrangement and a three grid ion extraction assembly. It is shown that the ring cusp magnetic field geometry confines the plasma to the volume immediately adjacent to the ion extraction assembly. A high emission current hollow cathode that demonstrated operation at an emission current as high as J sub E = 40 A, and measurements which show the breakdown voltage of individual sections of the J-series propellant flow electrical isolator is about 340 V per section are investigated.

Measuring the Electronic Properties of DNA-Specific Schottky Diodes Towards Detecting and Identifying Basidiomycetes DNA

PubMed Central

Periasamy, Vengadesh; Rizan, Nastaran; Al-Ta’ii, Hassan Maktuff Jaber; Tan, Yee Shin; Tajuddin, Hairul Annuar; Iwamoto, Mitsumasa

2016-01-01

The discovery of semiconducting behavior of deoxyribonucleic acid (DNA) has resulted in a large number of literatures in the study of DNA electronics. Sequence-specific electronic response provides a platform towards understanding charge transfer mechanism and therefore the electronic properties of DNA. It is possible to utilize these characteristic properties to identify/detect DNA. In this current work, we demonstrate a novel method of DNA-based identification of basidiomycetes using current-voltage (I-V) profiles obtained from DNA-specific Schottky barrier diodes. Electronic properties such as ideality factor, barrier height, shunt resistance, series resistance, turn-on voltage, knee-voltage, breakdown voltage and breakdown current were calculated and used to quantify the identification process as compared to morphological and molecular characterization techniques. The use of these techniques is necessary in order to study biodiversity, but sometimes it can be misleading and unreliable and is not sufficiently useful for the identification of fungi genera. Many of these methods have failed when it comes to identification of closely related species of certain genus like Pleurotus. Our electronics profiles, both in the negative and positive bias regions were however found to be highly characteristic according to the base-pair sequences. We believe that this simple, low-cost and practical method could be useful towards identifying and detecting DNA in biotechnology and pathology. PMID:27435636

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: A super junction SiGe low-loss fast switching power diode

NASA Astrophysics Data System (ADS)

Ma, Li; Gao, Yong

2009-01-01

This paper proposes a novel super junction (SJ) SiGe switching power diode which has a columnar structure of alternating p- and n- doped pillar substituting conventional n- base region and has far thinner strained SiGe p+ layer to overcome the drawbacks of existing Si switching power diode. The SJ SiGe diode can achieve low specific on-resistance, high breakdown voltages and fast switching speed. The results indicate that the forward voltage drop of SJ SiGe diode is much lower than that of conventional Si power diode when the operating current densities do not exceed 1000 A/cm2, which is very good for getting lower operating loss. The forward voltage drop of the Si diode is 0.66 V whereas that of the SJ SiGe diode is only 0.52 V at operating current density of 10 A/cm2. The breakdown voltages are 203 V for the former and 235 V for the latter. Compared with the conventional Si power diode, the reverse recovery time of SJ SiGe diode with 20 per cent Ge content is shortened by above a half and the peak reverse current is reduced by over 15%. The SJ SiGe diode can remarkably improve the characteristics of power diode by combining the merits of both SJ structure and SiGe material.

Impact ionization and transport properties of hexagonal boron nitride in a constant-voltage measurement

NASA Astrophysics Data System (ADS)

Hattori, Yoshiaki; Taniguchi, Takashi; Watanabe, Kenji; Nagashio, Kosuke

2018-01-01

The electrical evaluation of the crystallinity of hexagonal boron nitride (h -BN) is still limited to the measurement of dielectric breakdown strength, in spite of its importance as the substrate for two-dimensional van der Waals heterostructure devices. In this study, physical phenomena for degradation and failure in exfoliated single-crystal h -BN films were investigated using the constant-voltage stress test. At low electrical fields, the current gradually reduced and saturated with time, while the current increased at electrical fields higher than ˜8 MV /cm and finally resulted in the catastrophic dielectric breakdown. These transient behaviors may be due to carrier trapping to the defect sites in h -BN because trapped carriers lower or enhance the electrical fields in h -BN depending on their polarities. The key finding is the current enhancement with time at the high electrical field, suggesting the accumulation of electrons generated by the impact ionization process. Therefore, a theoretical model including the electron generation rate by an impact ionization process was developed. The experimental data support the expected degradation mechanism of h -BN. Moreover, the impact ionization coefficient was successfully extracted, which is comparable to that of Si O2 , even though the fundamental band gap for h -BN is smaller than that for Si O2 . Therefore, the dominant impact ionization in h -BN could be band-to-band excitation, not defect-assisted impact ionization.

Measuring the Electronic Properties of DNA-Specific Schottky Diodes Towards Detecting and Identifying Basidiomycetes DNA

NASA Astrophysics Data System (ADS)

Periasamy, Vengadesh; Rizan, Nastaran; Al-Ta'Ii, Hassan Maktuff Jaber; Tan, Yee Shin; Tajuddin, Hairul Annuar; Iwamoto, Mitsumasa

2016-07-01

The discovery of semiconducting behavior of deoxyribonucleic acid (DNA) has resulted in a large number of literatures in the study of DNA electronics. Sequence-specific electronic response provides a platform towards understanding charge transfer mechanism and therefore the electronic properties of DNA. It is possible to utilize these characteristic properties to identify/detect DNA. In this current work, we demonstrate a novel method of DNA-based identification of basidiomycetes using current-voltage (I-V) profiles obtained from DNA-specific Schottky barrier diodes. Electronic properties such as ideality factor, barrier height, shunt resistance, series resistance, turn-on voltage, knee-voltage, breakdown voltage and breakdown current were calculated and used to quantify the identification process as compared to morphological and molecular characterization techniques. The use of these techniques is necessary in order to study biodiversity, but sometimes it can be misleading and unreliable and is not sufficiently useful for the identification of fungi genera. Many of these methods have failed when it comes to identification of closely related species of certain genus like Pleurotus. Our electronics profiles, both in the negative and positive bias regions were however found to be highly characteristic according to the base-pair sequences. We believe that this simple, low-cost and practical method could be useful towards identifying and detecting DNA in biotechnology and pathology.

An Introduction to Electrical Breakdown in Dielectrics

DTIC Science & Technology

1985-04-01

PROJECT TASK WORK UNIT ELEMENT NO. NO. NO. NO. 11TI TL E ’tniclude Security Classification) AN INTRODUCTION TO ELECTRICAL 1PERSONAL AUTHOR(S...find themselves working in the area without the benefit of formal coursework. inAlthough the title of the course was High Voltage Engineer- inI titled...this work , "An Introduction to Electrical Breakdown * Phenomena," because breakdown may occur at low voltages when spacecraft systems are considered

Ionizing potential waves and high-voltage breakdown streamers.

NASA Technical Reports Server (NTRS)

Albright, N. W.; Tidman, D. A.

1972-01-01

The structure of ionizing potential waves driven by a strong electric field in a dense gas is discussed. Negative breakdown waves are found to propagate with a velocity proportional to the electric field normal to the wavefront. This causes a curved ionizing potential wavefront to focus down into a filamentary structure, and may provide the reason why breakdown in dense gases propagates in the form of a narrow leader streamer instead of a broad wavefront.

Standard/Handbook for RF Ionization Breakdown Prevention in Spacecraft Components

DTIC Science & Technology

2015-06-19

localized glow discharge of the plasma ( corona ) while RF power is being applied. 8.4.3 RF Performance Changes If a breakdown occurs and damages the...in spacecraft components and systems. Ionization breakdown is a high-energy radio frequency (RF) discharge that can occur when the insulating media...energy can be discharged in a small volume, releasing large amounts of heat, melting local surfaces, and generating debris, all of which will likely

Standard/Handbook for RF Ionization Breakdown Prevention in Spacecraft Components

DTIC Science & Technology

2015-06-19

localized glow discharge of the plasma ( corona ) while RF power is being applied. 8.4.3 RF Performance Changes If a breakdown occurs and damages the part...in spacecraft components and systems. Ionization breakdown is a high-energy radio frequency (RF) discharge that can occur when the insulating media...energy can be discharged in a small volume, releasing large amounts of heat, melting local surfaces, and generating debris, all of which will likely

High power thyristors with 5 kV blocking voltage. Volume 1: Development of high-voltage-thyristors (4.5 kV) with good dynamic properties

NASA Technical Reports Server (NTRS)

Lock, K.; Patalong, H.; Platzoeder, K.

1979-01-01

Using neutron irradiated silicon with considerably lower spread in resistivity as compared to conventionally doped silicon it was possible to produce power thyristors with breakdown voltages between 3.5 kV and 5.5 kV. The thyristor pellets have a diameter of 50 mm. Maximum average on-state currents of 600 to 800 A can be reached with these elements. The dynamic properties of the thryistors could be improved to allow standard applications up to maximum repetitive voltages of 4.5 kV.

Frequency and temperature dependence of electrical breakdown at 21, 30, and 39 GHz.

PubMed

Braun, H H; Döbert, S; Wilson, I; Wuensch, W

2003-06-06

A TeV-range e(+)e(-) linear collider has emerged as one of the most promising candidates to extend the high energy frontier of experimental elementary particle physics. A high accelerating gradient for such a collider is desirable to limit its overall length. Accelerating gradient is mainly limited by electrical breakdown, and it has been generally assumed that this limit increases with increasing frequency for normal-conducting accelerating structures. Since the choice of frequency has a profound influence on the design of a linear collider, the frequency dependence of breakdown has been measured using six exactly scaled single-cell cavities at 21, 30, and 39 GHz. The influence of temperature on breakdown behavior was also investigated. The maximum obtainable surface fields were found to be in the range of 300 to 400 MV/m for copper, with no significant dependence on either frequency or temperature.

Frequency and Temperature Dependence of Electrical Breakdown at 21, 30, and 39GHz

NASA Astrophysics Data System (ADS)

Braun, H. H.; Döbert, S.; Wilson, I.; Wuensch, W.

2003-06-01

A TeV-range e+e- linear collider has emerged as one of the most promising candidates to extend the high energy frontier of experimental elementary particle physics. A high accelerating gradient for such a collider is desirable to limit its overall length. Accelerating gradient is mainly limited by electrical breakdown, and it has been generally assumed that this limit increases with increasing frequency for normal-conducting accelerating structures. Since the choice of frequency has a profound influence on the design of a linear collider, the frequency dependence of breakdown has been measured using six exactly scaled single-cell cavities at 21, 30, and 39GHz. The influence of temperature on breakdown behavior was also investigated. The maximum obtainable surface fields were found to be in the range of 300 to 400 MV/m for copper, with no significant dependence on either frequency or temperature.

Study of the dielectric breakdown properties of CO2-O2 mixtures by considering electron detachments from negative ions

NASA Astrophysics Data System (ADS)

Zhao, Hu; Tian, Zengyao; Deng, Yunkun; Li, Xingwen; Lin, Hui

2017-12-01

The dielectric breakdown properties of CO2-O2 mixtures at different O2 concentrations and gas pressures were studied in this paper, with electron detachments from negative ions taken into consideration. The influences of the electron detachment on the reduced effective ionization coefficients αeff/N, the critical reduced electric fields (E/N)cr, the critical electron temperature Tcr, the breakdown reduced electric fields (E/N)breakdown, and the breakdown electron temperature Tbreakdown were analyzed for the CO2-O2 mixture. Based on the results, it was found that an enhancement in αeff/N and a decrease in (E/N)cr and Tcr were caused by the electron detachment, which appeared to be more significant at relatively low E/N and low gas pressures. With the increase in the pd product, both (E/N)breakdown and Tbreakdown in the CO2-O2 mixture decreased first and then tended to be a constant at relatively high pd products.

Applications of Laser-Induced Breakdown Spectroscopy (LIBS) in Molten Metal Processing

NASA Astrophysics Data System (ADS)

Hudson, Shaymus W.; Craparo, Joseph; De Saro, Robert; Apelian, Diran

2017-10-01

In order for metals to meet the demand for critical applications in the automotive, aerospace, and defense industries, tight control over the composition and cleanliness of the metal must be achieved. The use of laser-induced breakdown spectroscopy (LIBS) for applications in metal processing has generated significant interest for its ability to perform quick analyses in situ. The fundamentals of LIBS, current techniques for deployment on molten metal, demonstrated capabilities, and possible avenues for development are reviewed and discussed.

Characteristics of III-V Semiconductor Devices at High Temperature

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Young, Paul G.; Taub, Susan R.; Alterovitz, Samuel A.

1994-01-01

This paper presents the development of III-V based pseudomorphic high electron mobility transistors (PHEMT's) designed to operate over the temperature range 77 to 473 K (-196 to 200 C). These devices have a pseudomorphic undoped InGaAs channel that is sandwiched between an AlGaAs spacer and a buffer layer; gate widths of 200, 400, 1600, and 3200 micrometers; and a gate length of 2 micrometers. Measurements were performed at both room temperature and 473 K (200 C) and show that the drain current decreases by 30 percent and the gate current increases to about 9 microns A (at a reverse bias of -1.5 V) at the higher temperature. These devices have a maximum DC power dissipation of about 4.5 W and a breakdown voltage of about 16 V.

Laser induced breakdown in gas mixtures. Experimental and statistical investigation on n-decane ignition: Pressure, mixture composition and equivalence ratio effects.

PubMed

Mokrani, Nabil; Gillard, Philippe

2018-03-26

This paper presents a physical and statistical approach to laser-induced breakdown in n-decane/N 2  + O 2 mixtures as a function of incident or absorbed energy. A parametric study, with pressure, fuel purity and equivalence ratio, was conducted to determine the incident and absorbed energies involved in producing breakdown, followed or not by ignition. The experiments were performed using a Q-switched Nd-YAG laser (1064 nm) inside a cylindrical 1-l combustion chamber in the range of 1-100 mJ of incident energy. A stochastic study of breakdown and ignition probabilities showed that the mixture composition had a significant effect on ignition with large variation of incident or absorbed energy required to obtain 50% of breakdown. It was observed that the combustion products absorb more energy coming from the laser. The effect of pressure on the ignition probabilities of lean and near stoichiometric mixtures was also investigated. It was found that a high ignition energy E50% is required for lean mixtures at high pressures (3 bar). The present study provides new data obtained on an original experimental setup and the results, close to laboratory-produced laser ignition phenomena, will enhance the understanding of initial conditions on the breakdown or ignition probabilities for different mixtures. Copyright © 2018 Elsevier B.V. All rights reserved.

Effects of different compositions from magnetic and nonmagnetic dopants on structural and electrical properties of ZnO nanoparticles-based varistor ceramics

NASA Astrophysics Data System (ADS)

Sendi, Rabab Khalid

2018-03-01

In the current study, 20 nm zinc oxide (ZnO) nanoparticles were used to manufacture high-density ZnO discs doped with Mn and Sn via the conventional ceramic processing method, and their properties were characterized. Results show that the dopants were found to have significant effects on the ZnO varistors, especially on the shape and size of grains, which are significantly different for both dopants. The strong solid-state reaction in the varistor from the 20 nm ZnO powder during the sintering process may be attributed to the high surface area of the 20 nm ZnO nanoparticles. Although Mn and Sn do not affect the well-known peaks related to the wurtzite structure of ZnO ceramics, a few of the additional peaks could be formed at high doping content (≥2.0) due to the formation of other unknown phases during the sintering process. Both additives also significantly affect the electrical properties of the varistor, with a marked changed in the breakdown voltage from 415 V to 460 V for Sn and from 400 V to 950 V for Mn. Interestingly, the electrical behaviors of the varistors, such as breakdown voltage, nonlinear coefficient, and barrier height, are higher for Mn- than Sn-doping samples, and the opposite behaviors hold for hardness, leakage currents, and electrical conductivities. Results show that the magnetic moment and valence state of the two additive dopants are responsible for all demonstrated differences in the electrical characteristics between the two dopants.

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition.

PubMed

Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I-Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung

2017-12-01

We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N 2 -based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H 2 /NH 3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias (V DSQ ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage (V th ), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

Breakdown of the Frozen-in Condition and Plasma Acceleration: Dynamical Theory

NASA Astrophysics Data System (ADS)

Song, Y.; Lysak, R. L.

2007-12-01

The magnetic reconnection hypothesis emphasizes the importance of the breakdown of the frozen-in condition, explains the strong dependence of the geomagnetic activity on the IMF, and approximates an average qualitative description for many IMF controlled effects in magnetospheric physics. However, some important theoretical aspects of reconnection, including its definition, have not been carefully examined. The crucial components of such models, such as the largely-accepted X-line reconnection picture and the broadly-used explanations of the breakdown of the frozen-in condition, lack complete theoretical support. The important irreversible reactive interaction is intrinsically excluded and overlooked in most reconnection models. The generation of parallel electric fields must be the result of a reactive plasma interaction, which is associated with the temporal changes and spatial gradients of magnetic and velocity shears (Song and Lysak, 2006). Unlike previous descriptions of the magnetic reconnection process, which depend on dissipative-type coefficients or some passive terms in the generalized Ohm's law, the reactive interaction is a dynamical process, which favors localized high magnetic and/or mechanical stresses and a low plasma density. The reactive interaction is often closely associated with the radiation of shear Alfvén waves and is independent of any assumed dissipation coefficients. The generated parallel electric field makes an irreversible conversion between magnetic energy and the kinetic energy of the accelerated plasma and the bulk flow. We demonstrate how the reactive interaction, e.g., the nonlinear interaction of MHD mesoscale wave packets at current sheets and in the auroral acceleration region, can create and support parallel electric fields, causing the breakdown of the frozen-in condition and plasma acceleration.

Preionization Techniques in a kJ-Scale Dense Plasma Focus

NASA Astrophysics Data System (ADS)

Povilus, Alexander; Shaw, Brian; Chapman, Steve; Podpaly, Yuri; Cooper, Christopher; Falabella, Steve; Prasad, Rahul; Schmidt, Andrea

2016-10-01

A dense plasma focus (DPF) is a type of z-pinch device that uses a high current, coaxial plasma gun with an implosion phase to generate dense plasmas. These devices can accelerate a beam of ions to MeV-scale energies through strong electric fields generated by instabilities during the implosion of the plasma sheath. The formation of these instabilities, however, relies strongly on the history of the plasma sheath in the device, including the evolution of the gas breakdown in the device. In an effort to reduce variability in the performance of the device, we attempt to control the initial gas breakdown in the device by seeding the system with free charges before the main power pulse arrives. We report on the effectiveness of two techniques developed for a kJ-scale DPF at LLNL, a miniature primer spark gap and pulsed, 255nm LED illumination. Prepared by LLNL under Contract DE-AC52-07NA27344.

Forensic Discrimination of Latent Fingerprints Using Laser-Induced Breakdown Spectroscopy (LIBS) and Chemometric Approaches.

PubMed

Yang, Jun-Ho; Yoh, Jack J

2018-01-01

A novel technique is reported for separating overlapping latent fingerprints using chemometric approaches that combine laser-induced breakdown spectroscopy (LIBS) and multivariate analysis. The LIBS technique provides the capability of real time analysis and high frequency scanning as well as the data regarding the chemical composition of overlapping latent fingerprints. These spectra offer valuable information for the classification and reconstruction of overlapping latent fingerprints by implementing appropriate statistical multivariate analysis. The current study employs principal component analysis and partial least square methods for the classification of latent fingerprints from the LIBS spectra. This technique was successfully demonstrated through a classification study of four distinct latent fingerprints using classification methods such as soft independent modeling of class analogy (SIMCA) and partial least squares discriminant analysis (PLS-DA). The novel method yielded an accuracy of more than 85% and was proven to be sufficiently robust. Furthermore, through laser scanning analysis at a spatial interval of 125 µm, the overlapping fingerprints were reconstructed as separate two-dimensional forms.

Development and Breakdown of Goertler Vortices in High Speed Boundary Layers

NASA Technical Reports Server (NTRS)

Li, Fei; Choudhari, Meelan; Chang, Chau-Lyan; Wu, Minwei; Greene, Ptrick T.

2010-01-01

The nonlinear development of G rtler instability over a concave surface gives rise to a highly distorted stationary flow in the boundary layer that has strong velocity gradients in both spanwise and wall-normal directions. This distorted flow is susceptible to strong, high frequency secondary instability that leads to the onset of transition. For high Mach number flows, the boundary layer is also subject to the second mode instability. The nonlinear development of G rtler vortices and the ensuing growth and breakdown of secondary instability, the G rtler vortex interactions with second mode instabilities as well as oblique second mode interactions are examined in the context of both internal and external hypersonic configurations using nonlinear parabolized stability equations, 2-D eigenvalue analysis and direct numerical simulation. For G rtler vortex development inside the Purdue Mach 6 Ludwieg tube wind tunnel, multiple families of unstable secondary eigenmodes are identified and their linear and nonlinear evolution is examined. The computation of secondary instability is continued past the onset of transition to elucidate the physical mechanisms underlying the laminar breakdown process. Nonlinear breakdown scenarios associated with transition over a Mach 6 compression cone configuration are also explored.

Penning Effects in High-Pressure Discharge of the Plasma Display Panel

NASA Astrophysics Data System (ADS)

Kim, S. S.; Choi, E. H.; Uhm, H. S.

2001-10-01

The plasma display panel is operated with high-pressure gas, for which the breakdown voltage reduction may be accomplished by mixing a small amount of xenon with neon gas. The UV light emitted from xenon discharge plasma is converted into fluorescent light, providing TV images. A recent theoretical calculation indicates that the breakdown voltage is significantly reduced for the mixed gas due to collisional frequency decrease. It is easy to ionize xenon atoms with low ionization energy. The electrons can also easily get their kinetic energy in neon gas mixed with xenon atoms, thereby reducing their collisional cross section and ionizing xenon atoms. However, previous study indicates that the breakdown voltage can be further reduced by the Penning effects, which has been mostly studied in a low pressure discharge. Influence of the Penning effects on the high-pressure discharge in a neon-xenon mixed gas is investigated in connection with applications to the plasma display panel. A theoretical model for high-pressure discharge is developed. It is shown that the breakdown voltage is reduced by 20 percent at the xenon mole fraction of 0.015, which agree remarkably well with experimental data.

Induced charging of shuttle orbiter by high electron-beam currents

NASA Technical Reports Server (NTRS)

Liemohn, H. B.

1977-01-01

Emission of high-current electron beams that was proposed for some Spacelab payloads required substantial return currents to the orbiter skin in order to neutralize the beam charge. Since the outer skin of the vehicle was covered with approximately 1200 sq m of thermal insulation which has the dielectric quality of air and an electrical conductivity that was estimated by NASA at 10 to the -9 power to 10 to the -10 power mhos/m, considerable transient charging and local potential differences were anticipated across the insulation. The theory for induced charging of spacecraft due to operation of electron guns was only developed for spherical metal vehicles and constant emission currents, which were not directly applicable to the orbiter situation. Field-aligned collection of electron return current from the ambient ionosphere at orbiter altitudes provides up to approximately 150 mA on the conducting surfaces and approximately 2.4 A on the dielectric thermal insulation. Local ionization of the neutral atmosphere by energetic electron bombardment or electrical breakdown may provide somewhat more return current.

Response of geostationary communications satellite solid-state power amplifiers to high-energy electron fluence

NASA Astrophysics Data System (ADS)

Lohmeyer, Whitney; Carlton, Ashley; Wong, Frankie; Bodeau, Michael; Kennedy, Andrew; Cahoy, Kerri

2015-05-01

The key components in communications satellite payloads are the high-power amplifiers that amplify the received signal so that it can be accurately transmitted to the intended end user. In this study, we examine 26 amplifier anomalies and quantify the high-energy electron environment for periods of time prior to the anomalies. Building on the work of Lohmeyer and Cahoy (2013), we find that anomalies occur at a rate higher than just by chance when the >2 MeV electron fluence accumulated over 14 and 21 days is elevated. To try to understand "why," we model the amplifier subsystem to assess whether the dielectric material in the radio frequency (RF) coaxial cables, which are the most exposed part of the system, is liable to experience electrical breakdown due to internal charging. We find that the accumulated electric field over the 14 and 21 days leading up to the anomalies is high enough to cause the dielectric material in the coax to breakdown. We also find that the accumulated voltages reached are high enough to compromise components in the amplifier system, for example, the direct current (DC) blocking capacitor. An electron beam test using a representative coaxial cable terminated in a blocking capacitor showed that discharges could occur with peak voltages and energies sufficient to damage active RF semiconductor devices.

High voltage studies of inverted-geometry ceramic insulators for a 350 kV DC polarized electron gun

DOE PAGES

Hernandez-Garcia, C.; Poelker, M.; Hansknecht, J.

2016-02-01

Jefferson Lab is constructing a 350 kV direct current high voltage photoemission gun employing a compact inverted-geometry insulator. This photogun will produce polarized electron beams at an injector test facility intended for low energy nuclear physics experiments, and to assist the development of new technology for the Continuous Electron Beam Accelerator Facility. A photogun operating at 350kV bias voltage reduces the complexity of the injector design, by eliminating the need for a graded-beta radio frequency “capture” section employed to boost lower voltage beams to relativistic speed. However, reliable photogun operation at 350 kV necessitates solving serious high voltage problems relatedmore » to breakdown and field emission. This study focuses on developing effective methods to avoid breakdown at the interface between the insulator and the commercial high voltage cable that connects the photogun to the high voltage power supply. Three types of inverted insulators were tested, in combination with two electrode configurations. Our results indicate that tailoring the conductivity of the insulator material, and/or adding a cathode triple-junction screening electrode, effectively serves to increase the hold-off voltage from 300kV to more than 375kV. In conclusion, electrostatic field maps suggest these configurations serve to produce a more uniform potential gradient across the insulator.« less

High voltage studies of inverted-geometry ceramic insulators for a 350 kV DC polarized electron gun

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hernandez-Garcia, C.; Poelker, M.; Hansknecht, J.

Jefferson Lab is constructing a 350 kV direct current high voltage photoemission gun employing a compact inverted-geometry insulator. This photogun will produce polarized electron beams at an injector test facility intended for low energy nuclear physics experiments, and to assist the development of new technology for the Continuous Electron Beam Accelerator Facility. A photogun operating at 350kV bias voltage reduces the complexity of the injector design, by eliminating the need for a graded-beta radio frequency “capture” section employed to boost lower voltage beams to relativistic speed. However, reliable photogun operation at 350 kV necessitates solving serious high voltage problems relatedmore » to breakdown and field emission. This study focuses on developing effective methods to avoid breakdown at the interface between the insulator and the commercial high voltage cable that connects the photogun to the high voltage power supply. Three types of inverted insulators were tested, in combination with two electrode configurations. Our results indicate that tailoring the conductivity of the insulator material, and/or adding a cathode triple-junction screening electrode, effectively serves to increase the hold-off voltage from 300kV to more than 375kV. In conclusion, electrostatic field maps suggest these configurations serve to produce a more uniform potential gradient across the insulator.« less

Increased Depression and Anxiety Symptoms are Associated with More Breakdowns in Cognitive Control to Cocaine Cues in Veterans with Cocaine Use Disorder.

PubMed

DiGirolamo, Gregory J; Gonzalez, Gerardo; Smelson, David; Guevremont, Nathan; Andre, Michael I; Patnaik, Pooja O; Zaniewski, Zachary R

2017-01-01

Cue-elicited craving is a clinically important aspect of cocaine addiction directly linked to cognitive control breakdowns and relapse to cocaine-taking behavior. However, whether craving drives breakdowns in cognitive control toward cocaine cues in veterans, who experience significantly more co-occurring mood disorders, is unknown. The present study tests whether veterans have breakdowns in cognitive control because of cue-elicited craving or current anxiety or depression symptoms. Twenty-four veterans with cocaine use disorder were cue-exposed, then tested on an antisaccade task in which participants were asked to control their eye movements toward cocaine or neutral cues by looking away from the cue. The relationship among cognitive control breakdowns (as measured by eye errors), cue-induced craving (changes in self-reported craving following cocaine cue exposure), and mood measures (depression and anxiety) was investigated. Veterans made significantly more errors toward cocaine cues than neutral cues. Depression and anxiety scores, but not cue-elicited craving, were significantly associated with increased subsequent errors toward cocaine cues for veterans. Increased depression and anxiety are specifically related to more cognitive control breakdowns toward cocaine cues in veterans. Depression and anxiety must be considered further in the etiology and treatment of cocaine use disorder in veterans. Furthermore, treating depression and anxiety as well, rather than solely alleviating craving levels, may prove a more effective combined treatment option in veterans with cocaine use disorder.

Plasma development in the accelerator of a 2-kJ focus discharge.

PubMed

Fischer, H; Haering, K H

1979-07-01

Optical image structures from early breakdown ( approximately 200 nsec) to focus formation (~1300 nsec) in 3 Torr hydrogen were studied by means of 2 image converter shutters having 50-nsec and 10-nsec exposure. Space charge limited cathode spots at the outer electrode (OE)-spoke-shaped positive columns across the gap-and an extended electron cloud along the center electrode (CE) determine the current flow during early breakdown. Ionization increases exponentially within the center gap plasma. This is separated from the CE by a pattern of anode drop filaments. Filament structures grow into the z-axis accelerated current sheath, which in addition carries the early spoke pattern. The sheath appears homogeneous after leaving the accelerator exit.

Observation of the avalanche of runaway electrons in air in a strong electric field.

PubMed

Gurevich, A V; Mesyats, G A; Zybin, K P; Yalandin, M I; Reutova, A G; Shpak, V G; Shunailov, S A

2012-08-24

The generation of an avalanche of runaway electrons is demonstrated for the first time in a laboratory experiment. Two flows of runaway electrons are formed sequentially in an extended air discharge gap at the stage of delay of a pulsed breakdown. The first, picosecond, runaway electron flow is emitted in the cathode region where the field is enhanced. Being accelerated in the gap, this beam generates electrons due to impact ionization. These secondary electrons form a delayed avalanche of runaway electrons if the field is strong enough. The properties of the avalanche correspond to the existing notions about the runaway breakdown in air. The measured current of the avalanche exceeds up to an order the current of the initiating electron beam.

Observation of the Avalanche of Runaway Electrons in Air in a Strong Electric Field

NASA Astrophysics Data System (ADS)

Gurevich, A. V.; Mesyats, G. A.; Zybin, K. P.; Yalandin, M. I.; Reutova, A. G.; Shpak, V. G.; Shunailov, S. A.

2012-08-01

The generation of an avalanche of runaway electrons is demonstrated for the first time in a laboratory experiment. Two flows of runaway electrons are formed sequentially in an extended air discharge gap at the stage of delay of a pulsed breakdown. The first, picosecond, runaway electron flow is emitted in the cathode region where the field is enhanced. Being accelerated in the gap, this beam generates electrons due to impact ionization. These secondary electrons form a delayed avalanche of runaway electrons if the field is strong enough. The properties of the avalanche correspond to the existing notions about the runaway breakdown in air. The measured current of the avalanche exceeds up to an order the current of the initiating electron beam.

Genomic heterozygosity and hybrid breakdown in cotton (Gossypium): different traits, different effects.

PubMed

Dai, Baosheng; Guo, Huanle; Huang, Cong; Zhang, Xianlong; Lin, Zhongxu

2016-04-12

Hybrid breakdown has been well documented in various species. Relationships between genomic heterozygosity and traits-fitness have been extensively explored especially in the natural populations. But correlations between genomic heterozygosity and vegetative and reproductive traits in cotton interspecific populations have not been studied. In the current study, two reciprocal F2 populations were developed using Gossypium hirsutum cv. Emian 22 and G. barbadense acc. 3-79 as parents to study hybrid breakdown in cotton. A total of 125 simple sequence repeat (SSR) markers were used to genotype the two F2 interspecific populations. To guarantee mutual independence among the genotyped markers, the 125 SSR markers were checked by the linkage disequilibrium analysis. To our knowledge, this is a novel approach to evaluate the individual genomic heterozygosity. After marker checking, 83 common loci were used to assess the extent of genomic heterozygosity. Hybrid breakdown was found extensively in the two interspecific F2 populations particularly on the reproductive traits because of the infertility and the bare seeds. And then, the relationships between the genomic heterozygosity and the vegetative reproductive traits were investigated. The only relationships between hybrid breakdown and heterozygosity were observed in the (Emian22 × 3-79) F2 population for seed index (SI) and boll number per plant (BN). The maternal cytoplasmic environment may have a significant effect on genomic heterozygosity and on correlations between heterozygosity and reproductive traits. A novel approach was used to evaluate genomic heterozygosity in cotton; and hybrid breakdown was observed in reproductive traits in cotton. These findings may offer new insight into hybrid breakdown in allotetraploid cotton interspecific hybrids, and may be useful for the development of interspecific hybrids for cotton genetic improvement.

Research on breakdown characteristics of oil-paper insulation in compound field at different temperatures

NASA Astrophysics Data System (ADS)

Li, L.; Chen, M. Y.; Zhu, X. C.; Gao, Z. W.; Zhang, H. D.; Li, G. X.; Zhang, J.; Yu, C. L.; Feng, Y. M.

2018-01-01

The breakdown characteristics of oil-paper insulation in AC, DC and compound field at different temperatures were studied. The breakdown mechanism of oil-paper insulation at different temperatures and in AC and DC electric fields was analyzed. The breakdown characteristic mechanisms of the oil-paper insulation in the compound field at different temperatures were obtained: the dielectric strength of oil-paper compound insulation is changed gradually from dependence on oil dielectric strength to dependence on paperboard dielectric strength at low temperature. The dielectric strength of oil-paper compound insulation is always related to the oil dielectric strength closely at high temperature with decrease of AC content.

Improved breakdown characteristics of monolithically integrated III-nitride HEMT-LED devices using carbon doping

NASA Astrophysics Data System (ADS)

Liu, Chao; Liu, Zhaojun; Huang, Tongde; Ma, Jun; May Lau, Kei

2015-03-01

We report selective growth of AlGaN/GaN high electron mobility transistors (HEMTs) on InGaN/GaN light emitting diodes (LEDs) for monolithic integration of III-nitride HEMT and LED devices (HEMT-LED). To improve the breakdown characteristics of the integrated HEMT-LED devices, carbon doping was introduced in the HEMT buffer by controlling the growth pressure and V/III ratio. The breakdown voltage of the fabricated HEMTs grown on LEDs was enhanced, without degradation of the HEMT DC performance. The improved breakdown characteristics can be attributed to better isolation of the HEMT from the underlying conductive p-GaN layer of the LED structure.

Van der Waals heterojunction diode composed of WS2 flake placed on p-type Si substrate

NASA Astrophysics Data System (ADS)

Aftab, Sikandar; Farooq Khan, M.; Min, Kyung-Ah; Nazir, Ghazanfar; Afzal, Amir Muhammad; Dastgeer, Ghulam; Akhtar, Imtisal; Seo, Yongho; Hong, Suklyun; Eom, Jonghwa

2018-01-01

P-N junctions represent the fundamental building blocks of most semiconductors for optoelectronic functions. This work demonstrates a technique for forming a WS2/Si van der Waals junction based on mechanical exfoliation. Multilayered WS2 nanoflakes were exfoliated on the surface of bulk p-type Si substrates using a polydimethylsiloxane stamp. We found that the fabricated WS2/Si p-n junctions exhibited rectifying characteristics. We studied the effect of annealing processes on the performance of the WS2/Si van der Waals p-n junction and demonstrated that annealing improved its electrical characteristics. However, devices with vacuum annealing have an enhanced forward-bias current compared to those annealed in a gaseous environment. We also studied the top-gate-tunable rectification characteristics across the p-n junction interface in experiments as well as density functional theory calculations. Under various temperatures, Zener breakdown occurred at low reverse-bias voltages, and its breakdown voltage exhibited a negative coefficient of temperature. Another breakdown voltage was observed, which increased with temperature, suggesting a positive coefficient of temperature. Therefore, such a breakdown can be assigned to avalanche breakdown. This work demonstrates a promising application of two-dimensional materials placed directly on conventional bulk Si substrates.

Breakdown Characteristics of SF6 Gap Disturbed by a Metallic Protrusion under Oscillating Transient Overvoltages

NASA Astrophysics Data System (ADS)

Kawamura, Tatsuo; Lee, Bok-Hee; Nishimura, Takahiko; Ishii, Masaru

1994-04-01

This paper deals with the experimental investigations of particle-initiated breakdown of SF6 gas stressed by the oscillating transient overvoltage and non-oscillating impulse voltages. The experiments are carried out by using hemisphere-to-plane electrodes with a needle-shaped protrusion in the gas pressure range of 0.05 to 0.3 MPa. The temporal growth of the prebreakdown process is measured by a current shunt and a photomultiplier. The electrical breakdown is initiated by the streamer corona in the vicinity of a needle-shaped protrusion and the flashover of test gap is substantially influenced by the local field enhancement due to the space charge formed by the preceding streamer corona. The dependence of the voltage-time characteristics on the polarity of test voltage is appreciable, and the minimum breakdown voltage under the damped oscillating transient overvoltage is approximately the same as that under the standard lightning impulse voltage. In presence of positive polarity, the dielectric strength of SF6 gas stressed by the oscillating transient overvoltage is particularly sensitive to the local field perturbed by a sharp conducting particle. The formative time lag from the first streamer corona to breakdown is longer in negative polarity than in positive polarity and the field stabilization of space charge is more pronounced in negative polarity.

Observations of narrow bipolar events reveal how lightning is initiated in thunderstorms

PubMed Central

Rison, William; Krehbiel, Paul R.; Stock, Michael G.; Edens, Harald E.; Shao, Xuan-Min; Thomas, Ronald J.; Stanley, Mark A.; Zhang, Yang

2016-01-01

A long-standing but fundamental question in lightning studies concerns how lightning is initiated inside storms, given the absence of physical conductors. The issue has revolved around the question of whether the discharges are initiated solely by conventional dielectric breakdown or involve relativistic runaway electron processes. Here we report observations of a relatively unknown type of discharge, called fast positive breakdown, that is the cause of high-power discharges known as narrow bipolar events. The breakdown is found to have a wide range of strengths and is the initiating event of numerous lightning discharges. It appears to be purely dielectric in nature and to consist of a system of positive streamers in a locally intense electric field region. It initiates negative breakdown at the starting location of the streamers, which leads to the ensuing flash. The observations show that many or possibly all lightning flashes are initiated by fast positive breakdown. PMID:26876654

Observations of narrow bipolar events reveal how lightning is initiated in thunderstorms.

PubMed

Rison, William; Krehbiel, Paul R; Stock, Michael G; Edens, Harald E; Shao, Xuan-Min; Thomas, Ronald J; Stanley, Mark A; Zhang, Yang

2016-02-15

A long-standing but fundamental question in lightning studies concerns how lightning is initiated inside storms, given the absence of physical conductors. The issue has revolved around the question of whether the discharges are initiated solely by conventional dielectric breakdown or involve relativistic runaway electron processes. Here we report observations of a relatively unknown type of discharge, called fast positive breakdown, that is the cause of high-power discharges known as narrow bipolar events. The breakdown is found to have a wide range of strengths and is the initiating event of numerous lightning discharges. It appears to be purely dielectric in nature and to consist of a system of positive streamers in a locally intense electric field region. It initiates negative breakdown at the starting location of the streamers, which leads to the ensuing flash. The observations show that many or possibly all lightning flashes are initiated by fast positive breakdown.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rison, William; Krehbiel, Paul R.; Stock, Michael G.

A long-standing but fundamental question in lightning studies concerns how lightning is initiated inside storms, given the absence of physical conductors. The issue has revolved around the question of whether the discharges are initiated solely by conventional dielectric breakdown or involve relativistic runaway electron processes. Here we report observations of a relatively unknown type of discharge, called fast positive breakdown, that is the cause of high-power discharges known as narrow bipolar events. We find that the breakdown has a wide range of strengths and is the initiating event of numerous lightning discharges. It appears to be purely dielectric in naturemore » and to consist of a system of positive streamers in a locally intense electric field region. It initiates negative breakdown at the starting location of the streamers, which leads to the ensuing flash. The observations show that many or possibly all lightning flashes are initiated by fast positive breakdown.« less

Novel THz radiation from relativistic laser-plasmas

NASA Astrophysics Data System (ADS)

Sheng, Z. M.; Wu, H. C.; Wang, W. M.; Dong, X. G.; Chen, M.; Zhang, J.

2009-05-01

The interaction of ultrashort intense laser pulses with plasma can produce electromagnetic radiation of ultra-broad spectra ranging from terahertz (THz) radiation to keV x-rays and beyond. Here we present a review of our recent theoretical and numerical investigation on high power THz generation from tenuous plasma or gas targets irradiated by ultrashort intense laser pulses. Three mechanisms of THz emission are addressed, which include the linear mode conversion from laser wakefields in inhomogeneous plasma, transient current emission at the plasma-vacuum boundaries, and the emission from residual transverse currents produced by temporally-asymmetric laser pulses passing through gas or plasma targets. Since there is no breakdown limit for plasma under the irradiation of high power lasers, in principle, all these mechanisms can lead to terahertz pulse emission at the power of beyond megawatt with the field strength of MV/cm, suitable for the study of high THz field physics and other applications.

An AlN/Al 0.85Ga 0.15N high electron mobility transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

2016-07-22

An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al 0.85Ga 0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I on/I off current ratio greater than 10 7 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. In conclusion,more » the room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.« less

An AlN/Al{sub 0.85}Ga{sub 0.15}N high electron mobility transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

2016-07-18

An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al{sub 0.85}Ga{sub 0.15}N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I{sub on}/I{sub off} current ratio greater than 10{sup 7} and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. The room temperature voltage-dependent 3-terminalmore » off-state drain current was adequately modeled with Frenkel-Poole emission.« less

An Acoustic Charge Transport Imager for High Definition Television Applications: Reliability Modeling and Parametric Yield Prediction of GaAs Multiple Quantum Well Avalanche Photodiodes. Degree awarded Oct. 1997

NASA Technical Reports Server (NTRS)

Hunt, W. D.; Brennan, K. F.; Summers, C. J.; Yun, Ilgu

1994-01-01

Reliability modeling and parametric yield prediction of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiodes (APDs), which are of interest as an ultra-low noise image capture mechanism for high definition systems, have been investigated. First, the effect of various doping methods on the reliability of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiode (APD) structures fabricated by molecular beam epitaxy is investigated. Reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. Median device lifetime and the activation energy of the degradation mechanism are computed for undoped, doped-barrier, and doped-well APD structures. Lifetimes for each device structure are examined via a statistically designed experiment. Analysis of variance shows that dark-current is affected primarily by device diameter, temperature and stressing time, and breakdown voltage depends on the diameter, stressing time and APD type. It is concluded that the undoped APD has the highest reliability, followed by the doped well and doped barrier devices, respectively. To determine the source of the degradation mechanism for each device structure, failure analysis using the electron-beam induced current method is performed. This analysis reveals some degree of device degradation caused by ionic impurities in the passivation layer, and energy-dispersive spectrometry subsequently verified the presence of ionic sodium as the primary contaminant. However, since all device structures are similarly passivated, sodium contamination alone does not account for the observed variation between the differently doped APDs. This effect is explained by the dopant migration during stressing, which is verified by free carrier concentration measurements using the capacitance-voltage technique.

Experimental Study of Floating-Gate-Type Metal-Oxide-Semiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application

NASA Astrophysics Data System (ADS)

Liu, Yongxun; Guo, Ruofeng; Kamei, Takahiro; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Hayashida, Tetsuro; Sakamoto, Kunihiro; Ogura, Atsushi; Masahara, Meishoku

2012-06-01

The floating-gate (FG)-type metal-oxide-semiconductor (MOS) capacitors with planar (planar-MOS) and three-dimensional (3D) nanosize triangular cross-sectional tunnel areas (3D-MOS) have successfully been fabricated by introducing rapid thermal oxidation (RTO) and postdeposition annealing (PDA), and their electrical characteristics between the control gate (CG) and FG have been systematically compared. It was experimentally found in both planar- and 3D-MOS capacitors that the uniform and higher breakdown voltages are obtained by introducing RTO owing to the high-quality thermal oxide formation on the surface and etched edge regions of the n+ polycrystalline silicon (poly-Si) FG, and the leakage current is highly suppressed after PDA owing to the improved quality of the tetraethylorthosilicate (TEOS) silicon dioxide (SiO2) between CG and FG. Moreover, a lower breakdown voltage between CG and FG was obtained in the fabricated 3D-MOS capacitors as compared with that of planar-MOS capacitors thanks to the enhanced local electric field at the tips of triangular tunnel areas. The developed nanosize triangular cross-sectional tunnel area is useful for the fabrication of low operating voltage flash memories.

Effect of Organic Blocking Layer on the Energy Storage Characteristics of High-Permittivity Sol-Gel Thin Film Based on Neat 2-Cyanoethyltrimethoxysilane

NASA Astrophysics Data System (ADS)

Kim, Yunsang; Kathaperumal, Mohanalingam; Pan, Ming-Jen; Perry, Joseph

2014-03-01

Organic-inorganic hybrid sol-gel materials with polar groups that can undergo reorientational polarization provide a potential route to dielectric materials for energy storage. We have investigated the influence of nanoscale polymeric layer on dielectric and energy storage properties of 2-cyanoethyltrimethoxysilane (CNETMS) films. Two polymeric materials, fluoropolymer (CYTOP) and poly(p-phenylene oxide, PPO), are examined as potential materials to control charge injection from electrical contacts into CNETMS films by means of a potential barrier, whose width and height are defined by thickness and permittivity. Blocking layers ranging from 20 nm to 200 nm were deposited on CNETMS films by spin casting and subjected to thermal treatment. Polarization-electric field measurements show 30% increase in extractable energy density with PPO/CNETMS bilayers, relative to CNETMS alone, due to improved breakdown strength. Conduction current of the bilayers indicate that onset of charge conduction at high field is much delayed, which can be translated into effective suppression of charge injection and probability of breakdown events. The results will be discussed in regards to film morphology, field partitioning, width and height of potential barrier, charge trapping and loss of bilayers.

Explosion of thin aluminum foils in air

NASA Astrophysics Data System (ADS)

Baksht, R.; Pokryvailo, A.; Yankelevich, Y.; Ziv, I.

2004-12-01

An inductive-based power supply (240μH, 50kA) was used for the investigation of the foil explosion process in the time range of 0.05ms

Self-pinched lithium beam transport experiments on SABRE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanson, D.L.; Olson, C.L.; Poukey, J.W.

Self-pinched transport of ion beams has many advantages for ion-driven ICF applications involving high yield and energy production. The authors are currently preparing for a self-pinched lithium beam transport experiment on the SABRE accelerator. There are three transport elements that must eventually be demonstrated: (1) efficient lithium beam generation and ballistic transport to a focus at the self-pinched transport channel entrance; (2) self-pinched transport in the channel, requiring optimized injection conditions and gas breakdown; and (3) self-pinched transport of the equilibrated beam from the channel into free space, with associated aiming and stability considerations. In the present experiment, a hollowmore » annular lithium beam from an applied-B extraction ion diode will be focused to small radius (r {le} 2 cm) in a 60 cm long ballistic focus section containing argon gas at a pressure of a few Torr. The self-pinched transport channel will contain a low pressure background gas of 10--40 mTorr argon to allow sufficient net current to confine the beam for long distance transport. IPROP simulations are in progress to optimize the design of the ballistic and self-pinched transport sections. Progress on preparation of this lithium self-pinched transport experiment, including a discussion of transport system design, important gas breakdown issues, and diagnostics, will be presented.« less

Mass spectra of neutral particles released during electrical breakdown of thin polymer films

NASA Technical Reports Server (NTRS)

Kendall, B. R. F.

1985-01-01

A special type of time-of-flight mass spectrometer triggered from the breakdown event was developed to study the composition of the neutral particle flux released during the electrical breakdown of polymer films problem. Charge is fed onto a metal-backed polymer surface by a movable smooth platinum contact. A slowly increasing potential from a high-impedance source is applied to the contact until breakdown occurs. The breakdown characteristics is made similar to those produced by an electron beam charging system operating at similar potentials. The apparatus showed that intense instantaneous fluxes of neutral particles are released from the sites of breakdown events. For Teflon FEP films of 50 and 75 microns thickness the material released consists almost entirely of fluorocarbon fragments, some of them having masses greater than 350 atomic mass units amu, while the material released from a 50 micron Kapton film consists mainly of light hydrocarbons with masses at or below 44 amu, with additional carbon monoxide and carbon dioxide. The apparatus is modified to allow electron beam charging of the samples.

Breakdown characteristics of atmospheric dielectric barrier discharge in gas flow condition

NASA Astrophysics Data System (ADS)

Fan, Zhihui; Yan, Huijie; Wang, Yuying; Liu, Yidi; Guo, Hongfei; Ren, Chunsheng

2018-05-01

Experimental investigations of the breakdown characteristics of plate-to-plate dielectric barrier discharge excited by an AC source at different gas flow conditions are carried out. The ignition voltage for the appearance of the very first discharge filament and the breakdown voltage in each discharge half cycle in continuous operation are examined. As revealed by the results of the indoor air experiment, the ignition voltage manifests a monotonous increase with the increase in the gas flow rate, while the breakdown voltage has a marked decline at the low gas flow rate and increases slightly as the gas flow rate is higher than 10 m/s. As regards the obvious decreases in the ignition voltage and breakdown voltage, the decrease in the humidity with the increase in the gas flow rate plays a dominant role. As regards the increase in breakdown voltage, the memory effect from the preceding discharge is considered. The losses of metastable particles, together with particles having high translational energy in the gas flow, are considered to be the most critical factors.

The experimental study of the DC dielectric breakdown strength in magnetic fluids

NASA Astrophysics Data System (ADS)

Kopčanský, P.; Tomčo, L.; Marton, K.; Koneracká, M.; Potočová, I.; Timko, M.

2004-05-01

Magnetic fluids have been studied for use as a high-voltage insulation. High-voltage measurements on magnetic fluids based on transformer oil, as a function of volume concentrations of magnetite particles and applied magnetic field, showed the increase of the DC dielectric breakdown strength opposite transformer oil, if the saturation magnetization of magnetic fluid is up to 4 mT approximately.

Laser-assisted guiding of electric discharges around objects

PubMed Central

Clerici, Matteo; Hu, Yi; Lassonde, Philippe; Milián, Carles; Couairon, Arnaud; Christodoulides, Demetrios N.; Chen, Zhigang; Razzari, Luca; Vidal, François; Légaré, François; Faccio, Daniele; Morandotti, Roberto

2015-01-01

Electric breakdown in air occurs for electric fields exceeding 34 kV/cm and results in a large current surge that propagates along unpredictable trajectories. Guiding such currents across specific paths in a controllable manner could allow protection against lightning strikes and high-voltage capacitor discharges. Such capabilities can be used for delivering charge to specific targets, for electronic jamming, or for applications associated with electric welding and machining. We show that judiciously shaped laser radiation can be effectively used to manipulate the discharge along a complex path and to produce electric discharges that unfold along a predefined trajectory. Remarkably, such laser-induced arcing can even circumvent an object that completely occludes the line of sight. PMID:26601188

Application of high-quality SiO2 grown by multipolar ECR source to Si/SiGe MISFET

NASA Technical Reports Server (NTRS)

Sung, K. T.; Li, W. Q.; Li, S. H.; Pang, S. W.; Bhattacharya, P. K.

1993-01-01

A 5 nm-thick SiO2 gate was grown on an Si(p+)/Si(0.8)Ge(0.2) modulation-doped heterostructure at 26 C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field above 12 MV/cm and fixed charge density about 3 x 10 exp 10/sq cm. Leakage current as low as 1/micro-A was obtained with the gate biased at 4 V. The MISFET with 0.25 x 25 sq m gate shows maximum drain current of 41.6 mA/mm and peak transconductance of 21 mS/mm.

The influence of the breakdown electric field in the configuration of lightning corona sheath on charge distribution in the channel

NASA Astrophysics Data System (ADS)

Ignjatovic, Milan; Cvetic, Jovan; Heidler, Fridolin; Markovic, Slavoljub; Djuric, Radivoje

2014-11-01

A model of corona sheath that surrounds the thin core of the lightning channel has been investigated by using a generalized traveling current source return stroke model. The lightning channel is modeled by a charged corona sheath that stretches around a highly conductive central core through which the main current flows. The channel core with the negatively charged outer channel sheath forms a strong electric field, with an overall radial orientation. The return stroke process is modeled as the negative leader charge in the corona sheath being discharged by the positive charge coming from the channel core. Expressions that describe how the corona sheath radius evolves during the return stroke are obtained from the corona sheath model, which predicts charge motion within the sheath. The corona sheath model, set forth by Maslowski and Rakov (2006), Tausanovic et al. (2010), Marjanovic and Cvetic (2009), Cvetic et al. (2011) and Cvetic et al. (2012), divides the sheath onto three zones: zone 1 (surrounding the channel core with net positive charge), zone 2 (surrounding zone 1 with negative charge) and zone 3 (the outer zone, representing uncharged virgin air). In the present study, we have assumed a constant electric field inside zone 1, as suggested by experimental research of corona discharges in coaxial geometry conducted by Cooray (2000). The present investigation builds upon previous studies by Tausanovic et al. (2010) and Cvetic et al. (2012) in several ways. The value of the breakdown electric field has been varied for probing its effect on channel charge distribution prior and during the return stroke. With the aim of investigating initial space charge distribution along the channel, total electric field at the outer surface of the channel corona sheath, just before the return stroke, is calculated and compared for various return stroke models. A self-consistent algorithm is applied to the generalized traveling current source return stroke model, so that the boundary condition for total electric field is fulfilled. The new density of space charge and the new radius of channel corona envelope, immediately before the return stroke stage, are calculated. The obtained results indicate a strong dependence of channel charge distribution on the breakdown electric field value. Among the compared return stroke models, transmission-line-type models have exhibited a good agreement with the predictions of the Gauss' law regarding total breakdown electric field on the corona sheath's outer surface. The generalized lightning traveling current source return stroke model gives similar results if the adjustment of the space charge density inside the corona sheath is performed.

Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zegrya, G. G.; Savenkov, G. G.; Morozov, V. A.

2017-04-15

The sensitivity of an energy-packed compound based on nanoporous silicon and calcium perchlorate to a high-current electron beam is studied. The initiation of explosive transformations in a mixture of potassium picrate with a highly dispersed powder of boron-doped silicon by means of a high-voltage discharge is examined. It is shown that explosive transformation modes (combustion and explosion) appear in the energy-packed compound under study upon its treatment with an electron beam. A relationship is established between the explosive transformation modes and the density of the energy-packed compound and between the breakdown (initiation) voltage and the mass fraction of the siliconmore » powder.« less

Vertical architecture for enhancement mode power transistors based on GaN nanowires

NASA Astrophysics Data System (ADS)

Yu, F.; Rümmler, D.; Hartmann, J.; Caccamo, L.; Schimpke, T.; Strassburg, M.; Gad, A. E.; Bakin, A.; Wehmann, H.-H.; Witzigmann, B.; Wasisto, H. S.; Waag, A.

2016-05-01

The demonstration of vertical GaN wrap-around gated field-effect transistors using GaN nanowires is reported. The nanowires with smooth a-plane sidewalls have hexagonal geometry made by top-down etching. A 7-nanowire transistor exhibits enhancement mode operation with threshold voltage of 1.2 V, on/off current ratio as high as 108, and subthreshold slope as small as 68 mV/dec. Although there is space charge limited current behavior at small source-drain voltages (Vds), the drain current (Id) and transconductance (gm) reach up to 314 mA/mm and 125 mS/mm, respectively, when normalized with hexagonal nanowire circumference. The measured breakdown voltage is around 140 V. This vertical approach provides a way to next-generation GaN-based power devices.

Skeletal-muscle growth and protein turnover.

PubMed Central

Millward, D J; Garlick, P J; Stewart, R J; Nnanyelugo, D O; Waterlow, J C

1975-01-01

Because of turnover, protein synthesis and breakdown can each be involved in the regulation of the growth of tissue protein. To investigate the regulation of skeletal-muscle-protein growth we measured rates of protein synthesis and breakdown in growing rats during development on a good diet, during development on a marginally low-protein diet and during rehabilitation on a good diet after a period of severe protein deficiency. Rates of protein synthesis were measured in vivo with a constant intravenous infusion of [14C]tyrosine. The growth rate of muscle protein was measured and the rate of breakdown calculated as breakdown rate=synthesis rate-growth rate. These measurements showed that during development on a good diet there was a fall with age in the rate of protein synthesis resulting from a fall in capacity (RNA concentration) and activity (synthesis rate per unit of RNA). There was a fall with age in the breakdown rate so that the rate was highest in the weaning rats, with a half-life of 3 days. There was a direct correlation between the fractional growth and breakdown rates. During rehabilitation on the good diet, rapid growth was also accompanied by high rates of protein breakdown. During growth on the inadequate diet protein synthesis rates were lesss than in controls, but growth occurred because of decreased rates of protein breakdown. This compression was not complete, however, since ultimate muscle size was only one-half that of controls. It is suggested that increased rates of protein breakdown are a necessary accompaniment to muscle growth and may result from the way in which myofibrils proliferate. PMID:1180916

High-Energy Laser Interaction with Gases, Droplets, and Bulk Liquids.

NASA Astrophysics Data System (ADS)

Jarzembski, Maurice Anthony

Breakdown threshold intensities (I_ {rm TH}) were measured as functions of wavelengths and pressure for air, He, Ar, and Xe using a Nd:YAG pulsed laser. Multiphoton absorption dominates in the UV and cascade collision ionization dominates in the IR; however, both can be affected by other electron gain and loss processes. Presence of droplets lowers breakdown of gases due to field enhancements. Breakdown is initiated either in the droplet material or in the gas. At lambda = 0.532mum for a 50 μm dia. water droplet in He, Ar, and air for p < 800 Torr, breakdown occurs inside the droplet and is independent of gas pressure. For droplet -in-Xe, at p < 140 Torr breakdown occurs inside the droplet and is independent of gas pressure. For droplet-in-Xe, at p < 140 Torr breakdown occurs inside the droplet but at p > 140 Torr, breakdown occurs outside the droplet and is dependent on gas pressure. Pressure dependence of breakdown was observed for 120mum dia. water droplets in Ar at p > 400 Torr. The required intensity for breakdown of droplet depends on I_{ rm TH} of bulk liquid and the effective field enhancement created by the droplet. The I _{rm TH} of droplet-in-air provides an upper limit to the propagation of a high energy laser beam in the atmosphere containing particles. By geometrical optics approach, a significant field enhancement located at the critical ring region, encircling the axis of the sphere in the forward direction at angle theta_{c}, was discovered where nonlinear processes can occur. This was confirmed experimentally and by Mie theory. Field enhancements calculated at the critical ring for water droplets of different sizes agree well with measurements. For a droplet of given size and real refractive index, the effective field enhancement and the volume over which it occurs are two important factors governing the occurrence of breakdown in droplets for both off resonance and on resonance conditions. Measurements of wavelength dependence of breakdown showed that in the UV, I_{rm TH} for droplets and bulk liquids were comparable and lower by few orders of magnitude from that of air. Transmittance and reflectance of bulk liquids in the UV change with intensity implying absorption due to nonlinear processes and consequent increase in the imaginary part of the refractive index of the liquids. In the IR, I_{rm TH} of air and bulk liquids are comparable but for droplets are considerably lower due to field enhancement.

Technique for the comparison of light spectra from natural and laboratory generated lightning current arcs

NASA Astrophysics Data System (ADS)

Mitchard, D.; Clark, D.; Carr, D.; Haddad, A.

2016-08-01

A technique was developed for the comparison of observed emission spectra from lightning current arcs generated through self-breakdown in air and the use of two types of initiation wire, aluminum bronze and nichrome, against previously published spectra of natural lightning events. A spectrograph system was used in which the wavelength of light emitted by the lightning arc was analyzed to derive elemental interactions. A lightning impulse of up to 100 kA was applied to a two hemispherical tungsten electrode configuration which allowed the effect of the lightning current and lightning arc length to be investigated. A natural lightning reference spectrum was reconstructed from literature, and generated lightning spectra were obtained from self-breakdown across a 14.0 mm air gap and triggered along initiation wires of length up to 72.4 mm. A comparison of the spectra showed that the generated lightning arc induced via self-breakdown produced a very similar spectrum to that of natural lightning, with the addition of only a few lines from the tungsten electrodes. A comparison of the results from the aluminum bronze initiation wire showed several more lines, whereas results from the nichrome initiation wire differed greatly across large parts of the spectrum. This work highlights the potential use for spectrographic techniques in the study of lightning interactions with surrounding media and materials, and in natural phenomena such as recently observed ball lightning.

Temporal patterning of the potential induced by localized corrosion of iron passivity in acid media. Growth and breakdown of the oxide film described in terms of a point defect model.

PubMed

Sazou, Dimitra; Pavlidou, Maria; Pagitsas, Michael

2009-10-21

This work analyses the nature of temporal patterning of the anodic potential induced by chlorides during polarization of iron under current-controlled conditions in acid solutions. It is shown that potential oscillations emerged as a result of the local chloride attack of a thin oxide layer, which covers the iron surface in its passive state. The mechanism by which both the local oxide breakdown and the subsequent localized active dissolution (pitting) occur is explained by considering a point defect model (PDM) developed to describe the oxide growth and breakdown. According to the PDM, chlorides occupy oxygen vacancies resulting in the inhibition of oxide growth and autocatalytic generation of cation vacancies that destabilize the oxide layer. Simultaneous transformation of the outer surface of the inner oxide layer to non-adherent ferrous chloride or oxo-chloride species leads to a further thinning of the oxide layer and its lifting-on from the iron surface. The process repeats again yielding sustained oscillations of the anodic potential. Analysis of the oscillatory response obtained under current-controlled conditions as a function of either the current or the time allows the suggestion of a set of alternate diagnostic criteria, which might be used to characterize localized corrosion of iron in acid solutions.

Graded junction termination extensions for electronic devices

NASA Technical Reports Server (NTRS)

Merrett, J. Neil (Inventor); Isaacs-Smith, Tamara (Inventor); Sheridan, David C. (Inventor); Williams, John R. (Inventor)

2006-01-01

A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

Graded junction termination extensions for electronic devices

NASA Technical Reports Server (NTRS)

Merrett, J. Neil (Inventor); Isaacs-Smith, Tamara (Inventor); Sheridan, David C. (Inventor); Williams, John R. (Inventor)

2007-01-01

A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

Novel electrode-elastomer combinations for improved performance and application of dielectric elastomers

NASA Astrophysics Data System (ADS)

Yuan, Wei

Dielectric elastomers are the most promising technology for mimicking human muscles in terms of strain, stress, and work density, etc. Actuators have been fabricated based on different design concepts and configurations for applications in robotics, prosthetic devices, medical implants, pumps, and valves. However, to date these actuators have experienced high rates of failure caused by electrical shorting of the compliant electrodes through the elastomer film during electrical breakdown, which has prevented their practical application. In this thesis, single walled carbon nanotube (SWNT) thin films were employed as compliant electrodes for dielectric elastomers to reduce the rate of failure. Thanks to the high aspect ratio of the SWNTs, the electrodes maintain substantial conductance at high biaxial strains. 3M VHB acrylics can be actuated up to 200% area strain with SWNT electrodes, this matches the performance of actuators with carbon grease electrodes. During uni-directional stretching, SWNT electrodes can maintain surface conductivity up to 700% linear strain. SWNT electrodes can experience a self-clearing process under high voltage discharging and electrically isolate the electrodes around the breakdown sites when breakdown events happen. With conventional dielectric elastomer electrode materials such as carbon grease and carbon black, a single breakdown event results in a permanent loss in the actuator's functionality. In contrast, for SWNT electrodes, the SWNTs around the breakdown site will be degraded and become non-conductive. The non-conductive area expands outward until the high voltage discharging stops. As such, the opposing electrodes are prevented from coming into contact with each other and forming an electrical short and the breakdown site is electrically isolated from the remainder of the active area. Despite the existence of the breakdown sites, the dielectric elastomer will resume its functionality and avoid permanent failure. Thus, dielectric elastomers with self-clearable SWNT electrodes will be self-healable. Due to the non-uniform surface morphology of SWNT thin films as well as their low turn-on voltage for field emission, corona discharging tends to occur on the electrode surface, even without the presence of a breakdown site through the film. The corona discharging will damage the SWNT electrodes, especially in the regions where the nanotube density is low. This in turn causes the dielectric elastomer to gradually lose its function. By applying a thin coating of dielectric oil on the SWNT electrodes, the corona discharging will be quenched. Dielectric elastomers with self-clearable SWNT electrodes combined with a dielectric oil coating show much longer lifetime and more stable operation. Thus, the SWNT self-clearable electrodes endow dielectric elastomers with fault-tolerance, high dielectric breakdown strength and long lifetime actuation. For examples, VHB acrylic elastomer can achieve 340 V/mum dielectric strength and 20x longer actuation. A dielectric strength of 270 V/mum and longer than 300 minutes of continuous actuation with 50% area strain have also obtained with silicone elastomers. This addition of self-clearable fault-tolerant electrodes to dielectric elastomers transducers improves the manufacturing yield and operational reliability of these artificial muscles and pushes them closer to commercialization.

Integer channels in nonuniform non-equilibrium 2D systems

NASA Astrophysics Data System (ADS)

Shikin, V.

2018-01-01

We discuss the non-equilibrium properties of integer channels in nonuniform 2D electron (hole) systems in the presence of a strong magnetic field. The results are applied to a qualitative explanation of the Corbino disk current-voltage characteristics (IVC) in the quantum Hall effect (QHE) regime. Special consideration is paid to the so-called "QHE breakdown" effect, which is readily observed in both the Hall bar and Corbino geometries of the tested cells. The QHE breakdown is especially evident in the Corbino samples, allowing for a more in-depth study of these effects.

Human error and the search for blame

NASA Technical Reports Server (NTRS)

Denning, Peter J.

1989-01-01

Human error is a frequent topic in discussions about risks in using computer systems. A rational analysis of human error leads through the consideration of mistakes to standards that designers use to avoid mistakes that lead to known breakdowns. The irrational side, however, is more interesting. It conditions people to think that breakdowns are inherently wrong and that there is ultimately someone who is responsible. This leads to a search for someone to blame which diverts attention from: learning from the mistakes; seeing the limitations of current engineering methodology; and improving the discourse of design.

Numerical simulation of the flow about the F-18 HARV at high angle of attack

NASA Technical Reports Server (NTRS)

Murman, Scott M.

1994-01-01

This report summarizes research done over the past two years as part of NASA Grant NCC 2-729. This research has been aimed at validating numerical methods for computing the flow about the complete F-18 HARV at alpha = 30 deg and alpha = 45 deg. At 30 deg angle of attack, the flow about the F-18 is dominated by the formation, and subsequent breakdown, of strong vortices over the wing leading-edge extensions (LEX). As the angle of attack is increased to alpha = 45 deg, the fuselage forebody of the F-18 contains significant laminar and transitional regions which are not present at alpha = 30 deg. Further, the flow over the LEX at alpha = 45 deg is dominated by an unsteady shedding in time, rather than strong coherent vortices. This complex physics, combined with the complex geometry of a full aircraft configuration, provides a challenge for current computational fluid dynamics (CFD) techniques. The following sections present the numerical method and grid generation scheme that was used, a review of prior research done to numerically model the F-18 HARV, and a discussion of the current research. The current research is broken into two main topics: the effect of engine-inlet mass-flow rate on the F-18 vortex breakdown position, and the results using a refined F-18 computational model to compute the flow at alpha = 30 deg and alpha = 45 deg.

Numerical simulation of the flow about the F-18 HARV at high angle of attack

NASA Technical Reports Server (NTRS)

Murman, Scott M.

1995-01-01

This research has been aimed at validating numerical methods for computing the flow about the complete F-18 HARV at alpha = 30 deg and alpha = 45 deg. At 30 deg angle of attack, the flow about the F-18 is dominated by the formation, and subsequent breakdown, of strong vortices over the wing leading-edge extensions (LEX). As the angle of attack is increased to alpha = 45 deg, the fuselage forebody of the F-18 contains significant laminar and transitional regions which are not present at alpha = 30 deg. Further, the flow over the LEX at alpha = 45 deg is dominated by an unsteady shedding in time, rather than strong coherent vortices. This complex physics, combined with the complex geometry of a full-aircraft configuration, provides a challenge for current computational fluid dynamics (CFD) techniques. The following sections present the numerical method and grid generation scheme that was used, a review of prior research done to numerically model the F-18 HARV, and a discussion of the current research. The current research is broken into three main topics; the effect of engine-inlet mass-flow rate on the F-18 vortex breakdown position, the results using a refined F-18 computational model to compute the flow at alpha = 30 deg and alpha = 45 deg, and research done using the simplified geometry of an ogive-cylinder configuration to investigate the physics of unsteady shear-layer shedding. The last section briefly summarizes the discussion.

MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs

NASA Astrophysics Data System (ADS)

Abermann, S.; Pozzovivo, G.; Kuzmik, J.; Strasser, G.; Pogany, D.; Carlin, J.-F.; Grandjean, N.; Bertagnolli, E.

2007-12-01

We apply metal organic chemical vapour deposition (MOCVD) of HfO2 and of ZrO2 from β-diketonate precursors to grow high-k gate dielectrics for InAlN/AlN/GaN metal oxide semiconductor (MOS)-high electron mobility transistors (HEMTs). High-k oxides of about 12 nm-14 nm are deposited for the MOS-HEMTs incorporating Ni/Au gates, whereas as a reference, Ni-contact-based 'conventional' Schottky-barrier (SB)-HEMTs are processed. The processed dielectrics decrease the gate current leakage of the HEMTs by about four orders of magnitude if compared with the SB-gated HEMTs and show superior device characteristics in terms of IDS and breakdown.

Megagauss-level magnetic field production in cm-scale auto-magnetizing helical liners pulsed to 500 kA in 125 ns

DOE PAGES

Shipley, Gabriel A.; Awe, Thomas James; Hutsel, Brian Thomas; ...

2018-05-03

We present Auto-magnetizing (AutoMag) liners [Slutz et al., Phys. Plasmas 24, 012704 (2017)] are designed to generate up to 100 T of axial magnetic field in the fuel for Magnetized Liner Inertial Fusion [Slutz et al., Phys. Plasmas 17, 056303 (2010)] without the need for external field coils. AutoMag liners (cylindrical tubes) are composed of discrete metallic helical conduction paths separated by electrically insulating material. Initially, helical current in the AutoMag liner produces internal axial magnetic field during a long (100 to 300 ns) current prepulse with an average current rise rate dI/dt=5 kA/ns. After the cold fuel is magnetized,more » a rapidly rising current (200 kA/ns) generates a calculated electric field of 64 MV/m between the helices. Such field is sufficient to force dielectric breakdown of the insulating material after which liner current is reoriented from helical to predominantly axial which ceases the AutoMag axial magnetic field production mechanism and the z-pinch liner implodes. Proof of concept experiments have been executed on the Mykonos linear transformer driver to measure the axial field produced by a variety of AutoMag liners and to evaluate what physical processes drive dielectric breakdown. Lastly, a range of field strengths have been generated in various cm-scale liners in agreement with magnetic transient simulations including a measured field above 90 T at I = 350 kA. By varying the helical pitch angle, insulator material, and insulator geometry, favorable liner designs have been identified for which breakdown occurs under predictable and reproducible field conditions.« less

Megagauss-level magnetic field production in cm-scale auto-magnetizing helical liners pulsed to 500 kA in 125 ns

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shipley, Gabriel A.; Awe, Thomas James; Hutsel, Brian Thomas

We present Auto-magnetizing (AutoMag) liners [Slutz et al., Phys. Plasmas 24, 012704 (2017)] are designed to generate up to 100 T of axial magnetic field in the fuel for Magnetized Liner Inertial Fusion [Slutz et al., Phys. Plasmas 17, 056303 (2010)] without the need for external field coils. AutoMag liners (cylindrical tubes) are composed of discrete metallic helical conduction paths separated by electrically insulating material. Initially, helical current in the AutoMag liner produces internal axial magnetic field during a long (100 to 300 ns) current prepulse with an average current rise rate dI/dt=5 kA/ns. After the cold fuel is magnetized,more » a rapidly rising current (200 kA/ns) generates a calculated electric field of 64 MV/m between the helices. Such field is sufficient to force dielectric breakdown of the insulating material after which liner current is reoriented from helical to predominantly axial which ceases the AutoMag axial magnetic field production mechanism and the z-pinch liner implodes. Proof of concept experiments have been executed on the Mykonos linear transformer driver to measure the axial field produced by a variety of AutoMag liners and to evaluate what physical processes drive dielectric breakdown. Lastly, a range of field strengths have been generated in various cm-scale liners in agreement with magnetic transient simulations including a measured field above 90 T at I = 350 kA. By varying the helical pitch angle, insulator material, and insulator geometry, favorable liner designs have been identified for which breakdown occurs under predictable and reproducible field conditions.« less

Megagauss-level magnetic field production in cm-scale auto-magnetizing helical liners pulsed to 500 kA in 125 ns

NASA Astrophysics Data System (ADS)

Shipley, G. A.; Awe, T. J.; Hutsel, B. T.; Slutz, S. A.; Lamppa, D. C.; Greenly, J. B.; Hutchinson, T. M.

2018-05-01

Auto-magnetizing (AutoMag) liners [Slutz et al., Phys. Plasmas 24, 012704 (2017)] are designed to generate up to 100 T of axial magnetic field in the fuel for Magnetized Liner Inertial Fusion [Slutz et al., Phys. Plasmas 17, 056303 (2010)] without the need for external field coils. AutoMag liners (cylindrical tubes) are composed of discrete metallic helical conduction paths separated by electrically insulating material. Initially, helical current in the AutoMag liner produces internal axial magnetic field during a long (100 to 300 ns) current prepulse with an average current rise rate d I / d t = 5 k A / n s . After the cold fuel is magnetized, a rapidly rising current ( 200 k A / n s ) generates a calculated electric field of 64 M V / m between the helices. Such field is sufficient to force dielectric breakdown of the insulating material after which liner current is reoriented from helical to predominantly axial which ceases the AutoMag axial magnetic field production mechanism and the z-pinch liner implodes. Proof of concept experiments have been executed on the Mykonos linear transformer driver to measure the axial field produced by a variety of AutoMag liners and to evaluate what physical processes drive dielectric breakdown. A range of field strengths have been generated in various cm-scale liners in agreement with magnetic transient simulations including a measured field above 90 T at I = 350 kA. By varying the helical pitch angle, insulator material, and insulator geometry, favorable liner designs have been identified for which breakdown occurs under predictable and reproducible field conditions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of onemore » or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.« less

Anisotropic breakdown of Fermi liquid quasiparticle excitations in overdoped La₂-xSrxCuO₄.

PubMed

Chang, J; Månsson, M; Pailhès, S; Claesson, T; Lipscombe, O J; Hayden, S M; Patthey, L; Tjernberg, O; Mesot, J

2013-01-01

High-temperature superconductivity emerges from an un-conventional metallic state. This has stimulated strong efforts to understand exactly how Fermi liquids breakdown and evolve into an un-conventional metal. A fundamental question is how Fermi liquid quasiparticle excitations break down in momentum space. Here we show, using angle-resolved photoemission spectroscopy, that the Fermi liquid quasiparticle excitations of the overdoped superconducting cuprate La1.77Sr0.23CuO4 is highly anisotropic in momentum space. The quasiparticle scattering and residue behave differently along the Fermi surface and hence the Kadowaki-Wood's relation is not obeyed. This kind of Fermi liquid breakdown may apply to a wide range of strongly correlated metal systems where spin fluctuations are present.

Automated qualification and analysis of protective spark gaps for DC accelerators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Banerjee, Srutarshi; Rajan, Rehim N.; Dewangan, S.

2014-07-01

Protective spark gaps are used in the high voltage multiplier column of a 3 MeV DC Accelerator to prevent excessive voltage build-ups. Precise gap of 5 mm is maintained between the electrodes in these spark gaps for obtaining 120 kV± 5 kV in 6 kg/cm{sup 2} SF{sub 6} environment which is the dielectric medium. There are 74 such spark gaps used in the multiplier. Each spark gap has to be qualified for electrical performance before fitting in the accelerator to ensure reliable operation. As the breakdown voltage stabilizes after a large number of sparks between the electrodes, the qualification processmore » becomes time consuming and cumbersome. For qualifying large number of spark gaps an automatic breakdown analysis setup has been developed. This setup operates in air, a dielectric medium. The setup consists of a flyback topology based high voltage power supply with maximum rating of 25 kV. This setup works in conjunction with spark detection and automated shutdown circuit. The breakdown voltage is sensed using a peak detector circuit. The voltage breakdown data is recorded and statistical distribution of the breakdown voltage has been analyzed. This paper describes details of the diagnostics and the spark gap qualification process based on the experimental data. (author)« less

High Gradient Accelerator Research

DOE Office of Scientific and Technical Information (OSTI.GOV)

Temkin, Richard

The goal of the MIT program of research on high gradient acceleration is the development of advanced acceleration concepts that lead to a practical and affordable next generation linear collider at the TeV energy level. Other applications, which are more near-term, include accelerators for materials processing; medicine; defense; mining; security; and inspection. The specific goals of the MIT program are: • Pioneering theoretical research on advanced structures for high gradient acceleration, including photonic structures and metamaterial structures; evaluation of the wakefields in these advanced structures • Experimental research to demonstrate the properties of advanced structures both in low-power microwave coldmore » test and high-power, high-gradient test at megawatt power levels • Experimental research on microwave breakdown at high gradient including studies of breakdown phenomena induced by RF electric fields and RF magnetic fields; development of new diagnostics of the breakdown process • Theoretical research on the physics and engineering features of RF vacuum breakdown • Maintaining and improving the Haimson / MIT 17 GHz accelerator, the highest frequency operational accelerator in the world, a unique facility for accelerator research • Providing the Haimson / MIT 17 GHz accelerator facility as a facility for outside users • Active participation in the US DOE program of High Gradient Collaboration, including joint work with SLAC and with Los Alamos National Laboratory; participation of MIT students in research at the national laboratories • Training the next generation of Ph. D. students in the field of accelerator physics.« less

Experiments and Computational Theory for Electrical Breakdown in Critical Components: THz Imaging of Electronic Plasmas.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zutavern, Fred J.; Hjalmarson, Harold P.; Bigman, Verle Howard

This report describes the development of ultra-short pulse laser (USPL) induced terahertz (THz) radiation to image electronic plasmas during electrical breakdown. The technique uses three pulses from two USPLs to (1) trigger the breakdown, (2) create a 2 picosecond (ps, 10 -12 s), THz pulse to illuminate the breakdown, and (3) record the THz image of the breakdown. During this three year internal research program, sub-picosecond jitter timing for the lasers, THz generation, high bandwidth (BW) diagnostics, and THz image acquisition was demonstrated. High intensity THz radiation was optically-induced in a pulse-charged gallium arsenide photoconductive switch. The radiation was collected,more » transported, concentrated, and co-propagated through an electro-optic crystal with an 800 nm USPL pulse whose polarization was rotated due to the spatially varying electric field of the THz image. The polarization modulated USPL pulse was then passed through a polarizer and the resulting spatially varying intensity was detected in a high resolution digital camera. Single shot images had a signal to noise of %7E3:1. Signal to noise was improved to %7E30:1 with several experimental techniques and by averaging the THz images from %7E4000 laser pulses internally and externally with the camera and the acquisition system (40 pulses per readout). THz shadows of metallic films and objects were also recorded with this system to demonstrate free-carrier absorption of the THz radiation and improve image contrast and resolution. These 2 ps THz pulses were created and resolved with 100 femtosecond (fs, 10 -15 s) long USPL pulses. Thus this technology has the capability to time-resolve extremely fast repetitive or single shot phenomena, such as those that occur during the initiation of electrical breakdown. The goal of imaging electrical breakdown was not reached during this three year project. However, plans to achieve this goal as part of a follow-on project are described in this document. Further modifications to improve the THz image contrast and resolution are proposed, and after they are made, images of photo-induced carriers in gallium arsenide and silicon will be acquired to evaluate image sensitivity versus carrier density. Finally electrical breakdown will be induced with the first USPL pulse, illuminated with THz radiation produced with the second USPL pulse and recorded with the third USPL pulse.« less

Laboratory hydraulic fracturing experiments in intact and pre-fractured rock

USGS Publications Warehouse

Zoback, M.D.; Rummel, F.; Jung, R.; Raleigh, C.B.

1977-01-01

Laboratory hydraulic fracturing experiments were conducted to investigate two factors which could influence the use of the hydrofrac technique for in-situ stress determinations; the possible dependence of the breakdown pressure upon the rate of borehole pressurization, and the influence of pre-existing cracks on the orientation of generated fractures. The experiments have shown that while the rate of borehole pressurization has a marked effect on breakdown pressures, the pressure at which hydraulic fractures initiate (and thus tensile strength) is independent of the rate of borehole pressurization when the effect of fluid penetration is negligible. Thus, the experiments indicate that use of breakdown pressures rather than fracture initiation pressures may lead to an erroneous estimate of tectonic stresses. A conceptual model is proposed to explain anomalously high breakdown pressures observed when fracturing with high viscosity fluids. In this model, initial fracture propagation is presumed to be stable due to large differences between the borehole pressure and that within the fracture. In samples which contained pre-existing fractures which were 'leaky' to water, we found it possible to generate hydraulic fractures oriented parallel to the direction of maximum compression if high viscosity drilling mud was used as the fracturing fluid. ?? 1977.

Laboratory studies of aerosol electrification and experimental evidence for electrical breakdown at different scales.

NASA Astrophysics Data System (ADS)

Alois, Stefano; Merrison, Jonathan; Iversen, Jens Jacob; Sesterhenn, Joern

2017-04-01

Contact electrification between different particles size/material can lead to electric field generation high enough to produce electrical breakdown. Experimental studies of solid aerosol contact electrification (Alois et al., 2016) has shown various electrical breakdown phenomena; these range from field emission at the contact site (nm-scale) limiting particle surface charge concentration, to visible electrical discharges (cm-scale) observed both with the use of an electrometer and high-speed camera. In these experiments micron-size particles are injected into a low-pressure chamber, where they are deviated by an applied electric field. A laser Doppler velocimeter allows the simultaneous determination of particle size and charge of single grains. Results have shown an almost constant surface charge concentration, which is likely to be due to charge limitation by field emission at the contact site between particle and injector. In a second measurement technique, the electrically isolated injector tube (i.e. a Faraday cage) is connected to an oscilloscope and synchronised to a high speed camera filming the injection. Here the electrification of a large cloud of particles can be quantified and discharging effects studied. This study advances our understanding on the physical processes leading to electrification and electrical breakdown mechanisms.

Breakdown Conditioning Chacteristics of Precision-Surface-Treatment-Electrode in Vacuum

NASA Astrophysics Data System (ADS)

Kato, Kastumi; Fukuoka, Yuji; Inagawa, Yukihiko; Saitoh, Hitoshi; Sakaki, Masayuki; Okubo, Hitoshi

Breakdown (BD) characteristics in vacuum are strongly dependent on the electrode surface condition, like the surface roughness etc. Therefore, in order to develop a high voltage vacuum circuit breaker, it is important to optimize the surface treatment process. This paper discusses about the effect of precision-surface-treatment of the electrode on breakdown conditioning characteristics under non-uniform electric field in vacuum. Experimental results reveal that the electrode surface treatment affects the conditioning process, especially the BD voltage and the BD field strength at the initial stage of the conditioning.

Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs.

PubMed

Wang, Hsiang-Chen; Chen, Meng-Chu; Lin, Yen-Sheng; Lu, Ming-Yen; Lin, Kuang-I; Cheng, Yung-Chen

2017-11-09

The features of eight-period In 0.2 Ga 0.8 N/GaN quantum wells (QWs) with silicon (Si) doping in the first two to five quantum barriers (QBs) in the growth sequence of blue light-emitting diodes (LEDs) are explored. Epilayers of QWs' structures are grown on 20 pairs of In 0.02 Ga 0.98 N/GaN superlattice acting as strain relief layers (SRLs) on patterned sapphire substrates (PSSs) by a low-pressure metal-organic chemical vapor deposition (LP-MOCVD) system. Temperature-dependent photoluminescence (PL) spectra, current versus voltage (I-V) curves, light output power versus injection current (L-I) curves, and images of high-resolution transmission electron microscopy (HRTEM) of epilayers are measured. The consequences show that QWs with four Si-doped QBs have larger carrier localization energy (41 meV), lower turn-on (3.27 V) and breakdown (- 6.77 V) voltages, and higher output power of light of blue LEDs at higher injection current than other samples. Low barrier height of QBs in a four-Si-doped QB sample results in soft confinement potential of QWs and lower turn-on and breakdown voltages of the diode. HRTEM images give the evidence that this sample has relatively diffusive interfaces of QWs. Uniform spread of carriers among eight QWs and superior localization of carriers in each well are responsible for the enhancement of light output power, in particular, for high injection current in the four-Si-doped QB sample. The results demonstrate that four QBs of eight In 0.2 Ga 0.8 N/GaN QWs with Si doping not only reduce the quantum-confined Stark effect (QCSE) but also improve the distribution and localization of carriers in QWs for better optical performance of blue LEDs.

Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs

NASA Astrophysics Data System (ADS)

Wang, Hsiang-Chen; Chen, Meng-Chu; Lin, Yen-Sheng; Lu, Ming-Yen; Lin, Kuang-I.; Cheng, Yung-Chen

2017-11-01

The features of eight-period In0.2Ga0.8N/GaN quantum wells (QWs) with silicon (Si) doping in the first two to five quantum barriers (QBs) in the growth sequence of blue light-emitting diodes (LEDs) are explored. Epilayers of QWs' structures are grown on 20 pairs of In0.02Ga0.98N/GaN superlattice acting as strain relief layers (SRLs) on patterned sapphire substrates (PSSs) by a low-pressure metal-organic chemical vapor deposition (LP-MOCVD) system. Temperature-dependent photoluminescence (PL) spectra, current versus voltage ( I- V) curves, light output power versus injection current ( L- I) curves, and images of high-resolution transmission electron microscopy (HRTEM) of epilayers are measured. The consequences show that QWs with four Si-doped QBs have larger carrier localization energy (41 meV), lower turn-on (3.27 V) and breakdown (- 6.77 V) voltages, and higher output power of light of blue LEDs at higher injection current than other samples. Low barrier height of QBs in a four-Si-doped QB sample results in soft confinement potential of QWs and lower turn-on and breakdown voltages of the diode. HRTEM images give the evidence that this sample has relatively diffusive interfaces of QWs. Uniform spread of carriers among eight QWs and superior localization of carriers in each well are responsible for the enhancement of light output power, in particular, for high injection current in the four-Si-doped QB sample. The results demonstrate that four QBs of eight In0.2Ga0.8N/GaN QWs with Si doping not only reduce the quantum-confined Stark effect (QCSE) but also improve the distribution and localization of carriers in QWs for better optical performance of blue LEDs.

Periodontal status affects C-reactive protein and lipids in patients with stable heart disease from a tertiary care cardiovascular clinic.

PubMed

Flores, Manuela F; Montenegro, Marlon M; Furtado, Mariana V; Polanczyk, Carisi A; Rösing, Cassiano K; Haas, Alex N

2014-04-01

There are scarce data on the impact of the periodontal condition in the control of biomarkers in patients with cardiovascular disease (CVD). The aim of this study is to assess whether periodontal inflammation and tissue breakdown are associated with C-reactive protein (CRP) and lipids in patients with stable heart disease. This cross-sectional study included 93 patients with stable coronary artery disease (57 males; mean age: 63.5 ± 9.8 years) who were in outpatient care for at least 6 months. After applying a structured questionnaire, periodontal examinations were performed by two calibrated periodontists in six sites per tooth at all teeth. Blood samples were collected from patients on the day of periodontal examination to determine levels of CRP, lipids, and glycated hemoglobin. Multiple linear regression models were fitted to evaluate the association among different periodontal and blood parameters controlling for sex, body mass index, glycated hemoglobin, use of oral hypoglycemic drugs, and smoking. Overall, the sample presented high levels of periodontal inflammation and tissue breakdown. Unadjusted mean concentrations of triglycerides (TGs), very-low-density lipoprotein cholesterol, and glucose were significantly higher in individuals with severe periodontitis. When multiple linear regression models were applied, number of teeth with clinical attachment loss ≥6 mm and presence of severe periodontitis were significantly associated with higher CRP concentrations. Bleeding on probing was significantly associated with TGs, total cholesterol, and non-high-density lipoprotein cholesterol. In this sample of patients with stable CVD, current periodontal inflammation and tissue breakdown are associated with cardiovascular inflammatory markers, such as CRP and lipid profile.

Design of High Voltage Electrical Breakdown Strength measuring system at 1.8K with a G-M cryocooler

NASA Astrophysics Data System (ADS)

Li, Jian; Huang, Rongjin; Li, Xu; Xu, Dong; Liu, Huiming; Li, Laifeng

2017-09-01

Impregnating resins as electrical insulation materials for use in ITER magnets and feeder system are required to be radiation stable, good mechanical performance and high voltage electrical breakdown strength. In present ITER project, the breakdown strength need over 30 kV/mm, for future DEMO reactor, it will be greater than this value. In order to develop good property insulation materials to satisfy the requirements of future fusion reactor, high voltage breakdown strength measurement system at low temperature is necessary. In this paper, we will introduce our work on the design of this system. This measuring system has two parts: one is an electrical supply system which provides the high voltage from a high voltage power between two electrodes; the other is a cooling system which consists of a G-M cryocooler, a superfluid chamber and a heat switch. The two stage G-M cryocooler pre-cool down the system to 4K, the superfluid helium pot is used for a container to depress the helium to superfluid helium which cool down the sample to 1.8K and a mechanical heat switch connect or disconnect the cryocooler and the pot. In order to provide the sufficient time for the test, the cooling system is designed to keep the sample at 1.8K for 300 seconds.

A metabolic profile for ‘Honeycrisp’ apple soggy breakdown, a chilling induced physiological disorder

USDA-ARS?s Scientific Manuscript database

‘Honeycrisp’ is an economically important apple cultivar increasing rapidly in planted acreage in many apple growing regions. Long-term cold storage can enhance value by enabling a longer window of availability, but the cultivar is highly susceptible to chilling induced disorders. Soggy breakdown ...

Design of high breakdown voltage vertical GaN p-n diodes with high-K/low-K compound dielectric structure for power electronics applications

NASA Astrophysics Data System (ADS)

Du, Jiangfeng; Li, Zhenchao; Liu, Dong; Bai, Zhiyuan; Liu, Yang; Yu, Qi

2017-11-01

In this work, a vertical GaN p-n diode with a high-K/low-K compound dielectric structure (GaN CD-VGD) is proposed and designed to achieve a record high breakdown voltage (BV) with a low specific on-resistance (Ron,sp). By introducing compound dielectric structure, the electric field near the p-n junction interface is suppressed due to the effects of high-K passivation layer, and a new electric field peak is induced into the n-type drift region, because of a discontinuity of electrical field at the interface of high-K and low-K layer. Therefore the distribution of electric field in GaN p-n diode becomes more uniform and an enhancement of breakdown voltage can be achieved. Numerical simulations demonstrate that GaN CD-VGD with a BV of 10650 V and a Ron,sp of 14.3 mΩ cm2, resulting in a record high figure-of-merit of 8 GW/cm2.

Al embedded MgO barrier MTJ: A first principle study for application in fast and compact STT-MRAMs

NASA Astrophysics Data System (ADS)

Yadav, Manoj Kumar; Gupta, Santosh Kumar; Rai, Sanjeev; Pandey, Avinash C.

2017-03-01

The first principle comparative study of a novel single Al sheet embedded MgO and pure MgO barrier having Fe electrodes magnetic tunnel junction has been presented. Al embedded MgO is reported to provide enhanced spin polarised tunnelling current due to increase of spin-polarized density of states at Fermi energy in the barrier region. This novel MTJ provides a current density and resistance area (RA) product of 94.497 ×107 A / cm2 and 0.105  Ω - μm2 respectively. With such a low RA product; it allows higher deriving current due to which switching time of magnetization reversal reduces without inducing barrier related breakdowns in non-volatile magnetic random access memories. The low RA product and high current density of the proposed MTJ may have possible applications in integration with existing MOS circuits.

Observations of narrow bipolar events reveal how lightning is initiated in thunderstorms

DOE PAGES

Rison, William; Krehbiel, Paul R.; Stock, Michael G.; ...

2016-02-15

A long-standing but fundamental question in lightning studies concerns how lightning is initiated inside storms, given the absence of physical conductors. The issue has revolved around the question of whether the discharges are initiated solely by conventional dielectric breakdown or involve relativistic runaway electron processes. Here we report observations of a relatively unknown type of discharge, called fast positive breakdown, that is the cause of high-power discharges known as narrow bipolar events. We find that the breakdown has a wide range of strengths and is the initiating event of numerous lightning discharges. It appears to be purely dielectric in naturemore » and to consist of a system of positive streamers in a locally intense electric field region. It initiates negative breakdown at the starting location of the streamers, which leads to the ensuing flash. The observations show that many or possibly all lightning flashes are initiated by fast positive breakdown.« less

Numerical simulation of incidence and sweep effects on delta wing vortex breakdown

NASA Technical Reports Server (NTRS)

Ekaterinaris, J. A.; Schiff, Lewis B.

1994-01-01

The structure of the vortical flowfield over delta wings at high angles of attack was investigated. Three-dimensional Navier-Stokes numerical simulations were carried out to predict the complex leeward-side flowfield characteristics, including leading-edge separation, secondary separation, and vortex breakdown. Flows over a 75- and a 63-deg sweep delta wing with sharp leading edges were investigated and compared with available experimental data. The effect of variation of circumferential grid resolution grid resolution in the vicinity of the wing leading edge on the accuracy of the solutions was addressed. Furthermore, the effect of turbulence modeling on the solutions was investigated. The effects of variation of angle of attack on the computed vortical flow structure for the 75-deg sweep delta wing were examined. At moderate angles of attack no vortex breakdown was observed. When a critical angle of attack was reached, bubble-type vortex breakdown was found. With further increase in angle of attack, a change from bubble-type breakdown to spiral-type vortex breakdown was predicted by the numerical solution. The effects of variation of sweep angle and freestream Mach number were addressed with the solutions on a 63-deg sweep delta wing.

High-Field Quasiballistic Transport in Short Carbon Nanotubes

NASA Astrophysics Data System (ADS)

Javey, Ali; Guo, Jing; Paulsson, Magnus; Wang, Qian; Mann, David; Lundstrom, Mark; Dai, Hongjie

2004-03-01

Single walled carbon nanotubes with Pd Ohmic contacts and lengths ranging from several microns down to 10nm are investigated by electron transport experiments and theory. The mean-free path (MFP) for acoustic phonon scattering is estimated to be lap˜300 nm, and that for optical phonon scattering is lop˜15 nm. Transport through very short (˜10 nm) nanotubes is free of significant acoustic and optical phonon scattering and thus ballistic and quasiballistic at the low- and high-bias voltage limits, respectively. High currents of up to 70 μA can flow through a short nanotube. Possible mechanisms for the eventual electrical breakdown of short nanotubes at high fields are discussed. The results presented here have important implications to high performance nanotube transistors and interconnects.

Space- and time-resolved raman and breakdown spectroscopy: advanced lidar techniques

NASA Astrophysics Data System (ADS)

Silviu, Gurlui; Marius Mihai, Cazacu; Adrian, Timofte; Oana, Rusu; Georgiana, Bulai; Dimitriu, Dan

2018-04-01

DARLIOES - the advanced LIDAR is based on space- and time-resolved RAMAN and breakdown spectroscopy, to investigate chemical and toxic compounds, their kinetics and physical properties at high temporal (2 ns) and spatial (1 cm) resolution. The high spatial and temporal resolution are needed to resolve a large variety of chemical troposphere compounds, emissions from aircraft, the self-organization space charges induced light phenomena, temperature and humidity profiles, ice nucleation, etc.

Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Yanfeng; Pan, Chengbin; Hui, Fei

2016-01-04

Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO{sub 2}, such as charge trapping and detrapping, stress induced leakage current, and untimelymore » dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.« less

Corrosion behavior and microstructures of experimental Ti-Au alloys.

PubMed

Takahashi, Masatoshi; Kikuchi, Masafumi; Takada, Yukyo; Okuno, Osamu; Okabe, Toru

2004-06-01

Anodic polarization was performed in 0.9% NaCl and 1% lactic acid solutions to characterize the relationship between the corrosion behavior and microstructures of cast Ti-Au (5-40%) alloys. An abrupt increase in the current density occurred at approximately 0.6 V vs. SCE for the 30% and 40% Au alloys in the 0.9% NaCl solution. The microstructures after corrosion testing indicated that this breakdown may have been caused by the preferential dissolution of the Ti3Au. However, the potential for preferential dissolution was higher than the breakdown potential of stainless steel or Co-Cr alloy, which meant that the corrosion resistance of the Ti-Au alloys was superior. In 1% lactic acid solution, the corrosion resistance of the Ti-Au alloys was excellent, with no breakdown at any composition. In the present test solutions, the Ti-Au alloys up to 20% Au had good corrosion resistance comparable to that for pure titanium.

Grain-scale supercharging and breakdown on airless regoliths

NASA Astrophysics Data System (ADS)

Zimmerman, M. I.; Farrell, W. M.; Hartzell, C. M.; Wang, X.; Horanyi, M.; Hurley, D. M.; Hibbitts, K.

2016-10-01

Interactions of the solar wind and emitted photoelectrons with airless bodies have been studied extensively. However, the details of how charged particles interact with the regolith at the scale of a single grain have remained largely uncharacterized. Recent efforts have focused upon determining total surface charge under photoemission and solar wind bombardment and the associated electric field and potential. In this work, theory and simulations are used to show that grain-grain charge differences can exceed classical sheath predictions by several orders of magnitude, sometimes reaching dielectric breakdown levels. Temperature-dependent electrical conductivity works against supercharging by allowing current to leak through individual grains; the balance between internal conduction and surface charging controls the maximum possible grain-to-grain electric field. Understanding the finer details of regolith grain charging, conductive equilibrium, and dielectric breakdown will improve future numerical studies of space weathering and dust levitation on airless bodies.

Cu-Induced Dielectric Breakdown of Porous Low-Dielectric-Constant Film

NASA Astrophysics Data System (ADS)

Cheng, Yi-Lung; Lee, Chih-Yen; Huang, Yao-Liang; Sun, Chung-Ren; Lee, Wen-Hsi; Chen, Giin-Shan; Fang, Jau-Shiung; Phan, Bach Thang

2017-06-01

Dielectric breakdown induced by Cu ion migration in porous low- k dielectric films has been investigated in alternating-polarity bias conditions using a metal-insulator-metal capacitor with Cu top metal electrode. The experimental results indicated that Cu ions migrated into the dielectric film under stress with positive polarity, leading to weaker dielectric strength and shorter time to failure (TTF). In the alternating-polarity test, the measured TTFs increased with decreasing stressing frequency, implying backward migration of Cu ions during reverse-bias stress. Additionally, compared with a direct-current stress condition, the measured TTFs were higher as the frequency was decreased to 10-2 Hz. The electric-field acceleration factor for porous low- k dielectric film breakdown in the alternating-polarity test was also found to increase. This Cu backward migration effect is effective when the stressing time under negative polarity is longer than 0.1 s.

Effect of the scheme of plasmachemical processes on the calculated characteristics of a barrier discharge in xenon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Avtaeva, S. V.; Kulumbaev, E. B.

2008-06-15

The dynamics of a repetitive barrier discharge in xenon at a pressure of 400 Torr is simulated using a one-dimensional drift-diffusion model. The thicknesses of identical barriers with a dielectric constant of 4 are 2 mm, and the gap length is 4 mm. The discharge is fed with an 8-kV ac voltage at a frequency of 25 or 50 kHz. The development of the ionization wave and the breakdown and afterglow phases of a barrier discharge are analyzed using two different kinetic schemes of elementary processes in a xenon plasma. It is shown that the calculated waveforms of the dischargemore » voltage and current, the instant of breakdown, and the number of breakdowns per voltage half-period depend substantially on the properties of the kinetic scheme of plasmachemical processes.« less

Grain-Scale Supercharging and Breakdown on Airless Regoliths

NASA Technical Reports Server (NTRS)

Zimmerman, M. I.; Farrell, W. M.; Hartzell, C.M.; Wang, X.; Horanyi, M.; Hurley, D. M.; Hibbitts, K.

2016-01-01

Interactions of the solar wind and emitted photoelectrons with airless bodies have been studied extensively. However, the details of how charged particles interact with the regolith at the scale of a single grain have remained largely uncharacterized. Recent efforts have focused upon determining total surface charge under photoemission and solar wind bombardment and the associated electric field and potential. In this work, theory and simulations are used to show that grain-grain charge differences can exceed classical sheath predictions by several orders of magnitude, sometimes reaching dielectric breakdown levels. Temperature-dependent electrical conductivity works against supercharging by allowing current to leak through individual grains; the balance between internal conduction and surface charging controls the maximum possible grain-to-grain electric field. Understanding the finer details of regolith grain charging, conductive equilibrium, and dielectric breakdown will improve future numerical studies of space weathering and dust levitation on airless bodies.

Invariant protection of high-voltage electric motors of technological complexes at industrial enterprises at partial single-phase ground faults

NASA Astrophysics Data System (ADS)

Abramovich, B. N.; Sychev, Yu A.; Pelenev, D. N.

2018-03-01

Development results of invariant protection of high-voltage motors at incomplete single-phase ground faults are observed in the article. It is established that current protections have low action selectivity because of an inadmissible decrease in entrance signals during the shirt circuit occurrence in the place of transient resistance. The structural functional scheme and an algorithm of protective actions where correction of automatic zero sequence currents signals of the protected accessions implemented according to the level of incompleteness of ground faults are developed. It is revealed that automatic correction of zero sequence currents allows one to provide the invariance of sensitivity factor for protection under the variation conditions of a transient resistance in the place of damage. Application of invariant protection allows one to minimize damages in 6-10 kV electrical installations of industrial enterprises for a cause of infringement of consumers’ power supply and their system breakdown due to timely localization of emergency of ground faults modes.

Using Color, Texture and Object-Based Image Analysis of Multi-Temporal Camera Data to Monitor Soil Aggregate Breakdown

PubMed Central

Ymeti, Irena; van der Werff, Harald; Shrestha, Dhruba Pikha; Jetten, Victor G.; Lievens, Caroline; van der Meer, Freek

2017-01-01

Remote sensing has shown its potential to assess soil properties and is a fast and non-destructive method for monitoring soil surface changes. In this paper, we monitor soil aggregate breakdown under natural conditions. From November 2014 to February 2015, images and weather data were collected on a daily basis from five soils susceptible to detachment (Silty Loam with various organic matter content, Loam and Sandy Loam). Three techniques that vary in image processing complexity and user interaction were tested for the ability of monitoring aggregate breakdown. Considering that the soil surface roughness causes shadow cast, the blue/red band ratio is utilized to observe the soil aggregate changes. Dealing with images with high spatial resolution, image texture entropy, which reflects the process of soil aggregate breakdown, is used. In addition, the Huang thresholding technique, which allows estimation of the image area occupied by soil aggregate, is performed. Our results show that all three techniques indicate soil aggregate breakdown over time. The shadow ratio shows a gradual change over time with no details related to weather conditions. Both the entropy and the Huang thresholding technique show variations of soil aggregate breakdown responding to weather conditions. Using data obtained with a regular camera, we found that freezing–thawing cycles are the cause of soil aggregate breakdown. PMID:28556803

Using Color, Texture and Object-Based Image Analysis of Multi-Temporal Camera Data to Monitor Soil Aggregate Breakdown.

PubMed

Ymeti, Irena; van der Werff, Harald; Shrestha, Dhruba Pikha; Jetten, Victor G; Lievens, Caroline; van der Meer, Freek

2017-05-30

Remote sensing has shown its potential to assess soil properties and is a fast and non-destructive method for monitoring soil surface changes. In this paper, we monitor soil aggregate breakdown under natural conditions. From November 2014 to February 2015, images and weather data were collected on a daily basis from five soils susceptible to detachment (Silty Loam with various organic matter content, Loam and Sandy Loam). Three techniques that vary in image processing complexity and user interaction were tested for the ability of monitoring aggregate breakdown. Considering that the soil surface roughness causes shadow cast, the blue/red band ratio is utilized to observe the soil aggregate changes. Dealing with images with high spatial resolution, image texture entropy, which reflects the process of soil aggregate breakdown, is used. In addition, the Huang thresholding technique, which allows estimation of the image area occupied by soil aggregate, is performed. Our results show that all three techniques indicate soil aggregate breakdown over time. The shadow ratio shows a gradual change over time with no details related to weather conditions. Both the entropy and the Huang thresholding technique show variations of soil aggregate breakdown responding to weather conditions. Using data obtained with a regular camera, we found that freezing-thawing cycles are the cause of soil aggregate breakdown.

Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiOx capping layer by sputtering and post-annealing

NASA Astrophysics Data System (ADS)

Huang, Shyh-Jer; Chou, Cheng-Wei; Su, Yan-Kuin; Lin, Jyun-Hao; Yu, Hsin-Chieh; Chen, De-Long; Ruan, Jian-Long

2017-04-01

In this paper, we present a technique to fabricate normally off GaN-based high-electron mobility transistor (HEMT) by sputtering and post-annealing p-NiOx capping layer. The p-NiOx layer is produced by sputtering at room temperature and post-annealing at 500 °C for 30 min in pure O2 environment to achieve high hole concentration. The Vth shifts from -3 V in the conventional transistor to 0.33 V, and on/off current ratio became 107. The forward and reverse gate breakdown increase from 3.5 V and -78 V to 10 V and -198 V, respectively. The reverse gate leakage current is 10-9 A/mm, and the off-state drain-leakage current is 10-8 A/mm. The Vth hysteresis is extremely small at about 33 mV. We also investigate the mechanism that increases hole concentration of p-NiOx after annealing in oxygen environment resulted from the change of Ni2+ to Ni3+ and the surge of (111)-orientation.

Method and apparatus for electrical cable testing by pulse-arrested spark discharge

DOEpatents

Barnum, John R.; Warne, Larry K.; Jorgenson, Roy E.; Schneider, Larry X.

2005-02-08

A method for electrical cable testing by Pulse-Arrested Spark Discharge (PASD) uses the cable response to a short-duration high-voltage incident pulse to determine the location of an electrical breakdown that occurs at a defect site in the cable. The apparatus for cable testing by PASD includes a pulser for generating the short-duration high-voltage incident pulse, at least one diagnostic sensor to detect the incident pulse and the breakdown-induced reflected and/or transmitted pulses propagating from the electrical breakdown at the defect site, and a transient recorder to record the cable response. The method and apparatus are particularly useful to determine the location of defect sites in critical but inaccessible electrical cabling systems in aging aircraft, ships, nuclear power plants, and industrial complexes.

Preparation Nano-Structure Polytetrafluoroethylene (PTFE) Functional Film on the Cellulose Insulation Polymer and Its Effect on the Breakdown Voltage and Hydrophobicity Properties

PubMed Central

Liu, Cong; Li, Yanqing; Liao, Ruijin; Liao, Qiang; Tang, Chao

2018-01-01

Cellulose insulation polymer is an important component of oil-paper insulation, which is widely used in power transformer. The weight of the cellulose insulation polymer materials is as high as tens of tons in the larger converter transformer. Excellent performance of oil-paper insulation is very important for ensuring the safe operation of larger converter transformer. An effective way to improve the insulation and the physicochemical property of the oil impregnated insulation pressboard/paper is currently a popular research topic. In this paper, the polytetrafluoroethylene (PTFE) functional film was coated on the cellulose insulation pressboard by radio frequency (RF) magnetron sputtering to improve its breakdown voltage and the hydrophobicity properties. X-ray photoelectron spectroscopy (XPS) results show that the nano-structure PTFE functional film was successfully fabricated on the cellulose insulation pressboard surface. The scanning electron microscopy (SEM) and X-ray diffraction (XRD) present that the nanoscale size PTFE particles were attached to the pressboard surface and it exists in the amorphous form. Atomic force microscopy (AFM) shows that the sputtered pressboard surface is still rough. The rough PTFE functional film and the reduction of the hydrophilic hydroxyl of the surface due to the shielding effect of PTFE improve the breakdown and the hydrophobicity properties of the cellulose insulation pressboard obviously. This paper provides an innovative way to improve the performance of the cellulose insulation polymer. PMID:29883376

Preparation Nano-Structure Polytetrafluoroethylene (PTFE) Functional Film on the Cellulose Insulation Polymer and Its Effect on the Breakdown Voltage and Hydrophobicity Properties.

PubMed

Hao, Jian; Liu, Cong; Li, Yanqing; Liao, Ruijin; Liao, Qiang; Tang, Chao

2018-05-21

Cellulose insulation polymer is an important component of oil-paper insulation, which is widely used in power transformer. The weight of the cellulose insulation polymer materials is as high as tens of tons in the larger converter transformer. Excellent performance of oil-paper insulation is very important for ensuring the safe operation of larger converter transformer. An effective way to improve the insulation and the physicochemical property of the oil impregnated insulation pressboard/paper is currently a popular research topic. In this paper, the polytetrafluoroethylene (PTFE) functional film was coated on the cellulose insulation pressboard by radio frequency (RF) magnetron sputtering to improve its breakdown voltage and the hydrophobicity properties. X-ray photoelectron spectroscopy (XPS) results show that the nano-structure PTFE functional film was successfully fabricated on the cellulose insulation pressboard surface. The scanning electron microscopy (SEM) and X-ray diffraction (XRD) present that the nanoscale size PTFE particles were attached to the pressboard surface and it exists in the amorphous form. Atomic force microscopy (AFM) shows that the sputtered pressboard surface is still rough. The rough PTFE functional film and the reduction of the hydrophilic hydroxyl of the surface due to the shielding effect of PTFE improve the breakdown and the hydrophobicity properties of the cellulose insulation pressboard obviously. This paper provides an innovative way to improve the performance of the cellulose insulation polymer.

Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN

NASA Astrophysics Data System (ADS)

Hiraiwa, Atsushi; Sasaki, Toshio; Okubo, Satoshi; Horikawa, Kiyotaka; Kawarada, Hiroshi

2018-04-01

Atomic-layer-deposited (ALD) Al2O3 films are the most promising surface passivation and gate insulation layers in non-Si semiconductor devices. Here, we carried out an extensive study on the time-dependent dielectric breakdown characteristics of ALD-Al2O3 films formed on homo-epitaxial GaN substrates using two different oxidants at two different ALD temperatures. The breakdown times were approximated by Weibull distributions with average shape parameters of 8 or larger. These values are reasonably consistent with percolation theory predictions and are sufficiently large to neglect the wear-out lifetime distribution in assessing the long-term reliability of the Al2O3 films. The 63% lifetime of the Al2O3 films increases exponentially with a decreasing field, as observed in thermally grown SiO2 films at low fields. This exponential relationship disproves the correlation between the lifetime and the leakage current. Additionally, the lifetime decreases with measurement temperature with the most remarkable reduction observed in high-temperature (450 °C) O3-grown films. This result agrees with that from a previous study, thereby ruling out high-temperature O3 ALD as a gate insulation process. When compared at 200 °C under an equivalent SiO2 field of 4 MV/cm, which is a design guideline for thermal SiO2 on Si, high-temperature H2O-grown Al2O3 films have the longest lifetimes, uniquely achieving the reliability target of 20 years. However, this target is accomplished by a relatively narrow margin and, therefore, improvements in the lifetime are expected to be made, along with efforts to decrease the density of extrinsic Al2O3 defects, if any, to promote the practical use of ALD Al2O3 films.

Mechanism of formation of subnanosecond current front in high-voltage pulse open discharge

NASA Astrophysics Data System (ADS)

Schweigert, I. V.; Alexandrov, A. L.; Zakrevsky, Dm. E.; Bokhan, P. A.

2014-11-01

The mechanism of subnanosecond current front rise observed previously in the experiment in high-voltage pulse open discharge in helium is studied in kinetic particle-in-cell simulations. The Boltzmann equations for electrons, ions, and fast atoms are solved self-consistently with the Poisson equations for the electrical potential. The partial contributions to the secondary electron emission from the ions, fast atoms, photons, and electrons, bombarding the electrode, are calculated. In simulations, as in the experiment, the discharge glows between two symmetrical cathodes and the anode grid in the midplane at P =6 Torr and the applied voltage of 20 kV. The electron avalanche development is considered for two experimental situations during the last stage of breakdown: (i) with constant voltage and (ii) with decreasing voltage. For case (i), the subnanosecond current front rise is set by photons from the collisional excitation transfer reactions. For the case (ii), the energetic electrons swamp the cathode during voltage drop and provide the secondary electron emission for the subnanosecond current rise, observed in the experiment.

Ga2O3 Schottky barrier and heterojunction diodes for power electronics applications

NASA Astrophysics Data System (ADS)

Tadjer, Marko J.; Mahadik, Nadeemullah A.; Freitas, Jaime A.; Glaser, Evan R.; Koehler, Andrew D.; Luna, Lunet E.; Feigelson, Boris N.; Hobart, Karl D.; Kub, Fritz J.; Kuramata, A.

2018-02-01

We present novel approaches for the development of Ga2O3 Schottky barrier and heterojunction diodes. Samples of β- Ga2O3 were first annealed in N2 and O2 to demonstrate the effect of annealing on the carrier concentration. Cathodoluminescence and electron spin resonance measurements were also performed. Schottky barrier diodes on asgrown and O2-annealed epitaxial Ga2O3 films were fabricated and breakdown voltages were compared. Lower reverse current and a breakdown voltage of about 857 V were measured on the O2-annealed device. Finally, we report preliminary results from the development of anisotype heterojunctions between n-type Ga2O3 with a sputtered NiO layer. Rectifying current-voltage characteristics were obtained when the NiO was deposited both at room temperature and at 450 °C.

Electron transport model of dielectric charging

NASA Technical Reports Server (NTRS)

Beers, B. L.; Hwang, H. C.; Lin, D. L.; Pine, V. W.

1979-01-01

A computer code (SCCPOEM) was assembled to describe the charging of dielectrics due to irradiation by electrons. The primary purpose for developing the code was to make available a convenient tool for studying the internal fields and charge densities in electron-irradiated dielectrics. The code, which is based on the primary electron transport code POEM, is applicable to arbitrary dielectrics, source spectra, and current time histories. The code calculations are illustrated by a series of semianalytical solutions. Calculations to date suggest that the front face electric field is insufficient to cause breakdown, but that bulk breakdown fields can easily be exceeded.

Breakdown voltage mapping through voltage dependent ReBEL intensity imaging of multi-crystalline Si solar cells

NASA Astrophysics Data System (ADS)

Dix-Peek, RM.; van Dyk, EE.; Vorster, FJ.; Pretorius, CJ.

2018-04-01

Device material quality affects both the efficiency and the longevity of photovoltaic (PV) cells. Therefore, identifying these defects can be beneficial in the development of more efficient and longer lasting PV cells. In this study, a combination of spatially-resolved, electroluminescence (EL), and light beam induced current (LBIC) measurements, were used to identify specific defects and features of a multi-crystalline Si PV cells. In this study, a novel approach is used to map the breakdown voltage of a PV cell through voltage dependent Reverse Bias EL (ReBEL) intensity imaging.

Technique for the comparison of light spectra from natural and laboratory generated lightning current arcs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitchard, D., E-mail: mitcharddr@cardiff.ac.uk; Clark, D.; Carr, D.

A technique was developed for the comparison of observed emission spectra from lightning current arcs generated through self-breakdown in air and the use of two types of initiation wire, aluminum bronze and nichrome, against previously published spectra of natural lightning events. A spectrograph system was used in which the wavelength of light emitted by the lightning arc was analyzed to derive elemental interactions. A lightning impulse of up to 100 kA was applied to a two hemispherical tungsten electrode configuration which allowed the effect of the lightning current and lightning arc length to be investigated. A natural lightning reference spectrum wasmore » reconstructed from literature, and generated lightning spectra were obtained from self-breakdown across a 14.0 mm air gap and triggered along initiation wires of length up to 72.4 mm. A comparison of the spectra showed that the generated lightning arc induced via self-breakdown produced a very similar spectrum to that of natural lightning, with the addition of only a few lines from the tungsten electrodes. A comparison of the results from the aluminum bronze initiation wire showed several more lines, whereas results from the nichrome initiation wire differed greatly across large parts of the spectrum. This work highlights the potential use for spectrographic techniques in the study of lightning interactions with surrounding media and materials, and in natural phenomena such as recently observed ball lightning.« less

Mason’s equation application for prediction of voltage of oil shale treeing breakdown

NASA Astrophysics Data System (ADS)

Martemyanov, S. M.

2017-05-01

The application of the formula, which is used to calculate the maximum field at the tip of the pin-plane electrode system was proposed to describe the process of electrical treeing and treeing breakdown in an oil shale. An analytical expression for the calculation of the treeing breakdown voltage in the oil shale, as a function of the inter-electrode distance, was taken. A high accuracy of the correspondence of the model to the experimental data in the range of inter-electrode distances from 0.03 to 0.5 m was taken.

The DC dielectric breakdown strength of magnetic fluids based on transformer oil

NASA Astrophysics Data System (ADS)

Kopčanský, Peter; Tomčo, Ladislav; Marton, Karol; Koneracká, Martina; Timko, Milan; Potočová, Ivana

2005-03-01

The DC dielectric breakdown strength of magnetic fluids based on transformer oil TECHNOL US 4000, with different saturation magnetizations, was investigated in various orientations of external magnetic field. It was shown that the dielectric breakdown strength in H∣∣ E is strongly influenced by the aggregation effects. As a boundary volume concentration of magnetic particles, below which the magnetic fluids have better dielectric properties than pure transformer oil, the volume concentration Φ=0.01 was found. Thus magnetic fluids with Φ<0.01 are suitable for the use as a high-voltage insulation.

Experimental measurements of rf breakdowns and deflecting gradients in mm-wave metallic accelerating structures

DOE PAGES

Dal Forno, Massimo; Dolgashev, Valery; Bowden, Gordon; ...

2016-05-03

We present an experimental study of a high-gradient metallic accelerating structure at sub-THz frequencies, where we investigated the physics of rf breakdowns. Wakefields in the structure were excited by an ultrarelativistic electron beam. We present the first quantitative measurements of gradients and metal vacuum rf breakdowns in sub-THz accelerating cavities. When the beam travels off axis, a deflecting field is induced in addition to the longitudinal field. We measured the deflecting forces by observing the displacement and changes in the shape of the electron bunch. This behavior can be exploited for subfemtosecond beam diagnostics.

Effects of increasing temperature and, CO2 on quality of litter, shredders, and microorganisms in Amazonian aquatic systems

PubMed Central

Rezende, Renan de Souza; Gonçalves Júnior, José Francisco; Lopes, Aline; Piedade, Maria Teresa Fernandez; Cavalcante, Heloide de Lima; Hamada, Neusa

2017-01-01

Climate change may affect the chemical composition of riparian leaf litter and, aquatic organisms and, consequently, leaf breakdown. We evaluated the effects of different scenarios combining increased temperature and carbon dioxide (CO2) on leaf detritus of Hevea spruceana (Benth) Müll. and decomposers (insect shredders and microorganisms). We hypothesized that simulated climate change (warming and elevated CO2) would: i) decrease leaf-litter quality, ii) decrease survival and leaf breakdown by shredders, and iii) increase microbial leaf breakdown and fungal biomass. We performed the experiment in four microcosm chambers that simulated air temperature and CO2 changes in relation to a real-time control tracking current conditions in Manaus, Amazonas, Brazil. The experiment lasted seven days. During the experiment mean air temperature and CO2 concentration ranged from 26.96 ± 0.98ºC and 537.86 ± 18.36 ppmv in the control to 31.75 ± 0.50ºC and 1636.96 ± 17.99 ppmv in the extreme chamber, respectively. However, phosphorus concentration in the leaf litter decreased with warming and elevated CO2. Leaf quality (percentage of carbon, nitrogen, phosphorus, cellulose and lignin) was not influenced by soil flooding. Fungal biomass and microbial leaf breakdown were positively influenced by temperature and CO2 increase and reached their highest values in the intermediate condition. Both total and shredder leaf breakdown, and shredder survival rate were similar among all climatic conditions. Thus, low leaf-litter quality due to climate change and higher leaf breakdown under intermediate conditions may indicate an increase of riparian metabolism due to temperature and CO2 increase, highlighting the risk (e.g., decreased productivity) of global warming for tropical streams. PMID:29190723

Quantitative elemental imaging of heterogeneous catalysts using laser-induced breakdown spectroscopy

NASA Astrophysics Data System (ADS)

Trichard, F.; Sorbier, L.; Moncayo, S.; Blouët, Y.; Lienemann, C.-P.; Motto-Ros, V.

2017-07-01

Currently, the use of catalysis is widespread in almost all industrial processes; its use improves productivity, synthesis yields and waste treatment as well as decreases energy costs. The increasingly stringent requirements, in terms of reaction selectivity and environmental standards, impose progressively increasing accuracy and control of operations. Meanwhile, the development of characterization techniques has been challenging, and the techniques often require equipment with high complexity. In this paper, we demonstrate a novel elemental approach for performing quantitative space-resolved analysis with ppm-scale quantification limits and μm-scale resolution. This approach, based on laser-induced breakdown spectroscopy (LIBS), is distinguished by its simplicity, all-optical design, and speed of operation. This work analyzes palladium-based porous alumina catalysts, which are commonly used in the selective hydrogenation process, using the LIBS method. We report an exhaustive study of the quantification capability of LIBS and its ability to perform imaging measurements over a large dynamic range, typically from a few ppm to wt%. These results offer new insight into the use of LIBS-based imaging in the industry and paves the way for innumerable applications.

A preliminary model of work during initial examination and treatment planning appointments.

PubMed

Irwin, J Y; Torres-Urquidy, M H; Schleyer, T; Monaco, V

2009-01-10

Objective This study's objective was to formally describe the work process for charting and treatment planning in general dental practice to inform the design of a new clinical computing environment.Methods Using a process called contextual inquiry, researchers observed 23 comprehensive examination and treatment planning sessions during 14 visits to 12 general US dental offices. For each visit, field notes were analysed and reformulated as formalised models. Subsequently, each model type was consolidated across all offices and visits. Interruptions to the workflow, called breakdowns, were identified.Results Clinical work during dental examination and treatment planning appointments is a highly collaborative activity involving dentists, hygienists and assistants. Personnel with multiple overlapping roles complete complex multi-step tasks supported by a large and varied collection of equipment, artifacts and technology. Most of the breakdowns were related to technology which interrupted the workflow, caused rework and increased the number of steps in work processes.Conclusion Current dental software could be significantly improved with regard to its support for communication and collaboration, workflow, information design and presentation, information content, and data entry.

Quantitative Investigation of Room-Temperature Breakdown Effects in Pixelated TlBr Detectors

NASA Astrophysics Data System (ADS)

Koehler, Will; He, Zhong; Thrall, Crystal; O'Neal, Sean; Kim, Hadong; Cirignano, Leonard; Shah, Kanai

2014-10-01

Due to favorable material properties such as high atomic number (Tl: 81, Br: 35), high density ( 7.56 g/cm3), and a wide band gap (2.68 eV), thallium-bromide (TlBr) is currently under investigation for use as an alternative room-temperature semiconductor gamma-ray spectrometer. TlBr detectors can achieve less than 1% FWHM energy resolution at 662 keV, but these results are limited to stable operation at - 20°C. After days to months of room-temperature operation, ionic conduction causes these devices to fail. This work correlates the varying leakage current with alpha-particle and gamma-ray spectroscopic performances at various operating temperatures. Depth-dependent photopeak centroids exhibit time-dependent transient behavior, which indicates trapping sites form near the anode surface during room-temperature operation. After refabrication, similar performance and functionality of failed detectors returned.

A novel high-performance high-frequency SOI MESFET by the damped electric field

NASA Astrophysics Data System (ADS)

Orouji, Ali A.; Khayatian, Ahmad; Keshavarzi, Parviz

2016-06-01

In this paper, we introduce a novel silicon-on-insulator (SOI) metal-semiconductor field-effect-transistor (MESFET) using the damped electric field (DEF). The proposed structure is geometrically symmetric and compatible with common SOI CMOS fabrication processes. It has two additional oxide regions under the side gates in order to improve DC and RF characteristics of the DEF structure due to changes in the electrical potential, the electrical field distributions, and rearrangement of the charge carriers. Improvement of device performance is investigated by two-dimensional and two-carrier simulation of fundamental parameters such as breakdown voltage (VBR), drain current (ID), output power density (Pmax), transconductance (gm), gate-drain and gate-source capacitances, cut-off frequency (fT), unilateral power gain (U), current gain (h21), maximum available gain (MAG), and minimum noise figure (Fmin). The results show that proposed structure operates with higher performances in comparison with the similar conventional SOI structure.

AlN metal-semiconductor field-effect transistors using Si-ion implantation

NASA Astrophysics Data System (ADS)

Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomás

2018-04-01

We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230 °C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250 °C. The off-state breakdown voltage is 2370 V for drain-to-gate spacing of 25 µm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

Breakdown of the Bardeen-Stephen law for free flux flow in Bi2Sr2CaCu2O8+δ

NASA Astrophysics Data System (ADS)

Pallinger, Á.; Sas, B.; Pethes, I.; Vad, K.; Williams, F. I. B.; Kriza, G.

2008-09-01

Pulsed high-current experiments in single crystals of the high- Tc superconductor Bi2Sr2CaCu2O8+δ in a c -axis-directed magnetic field H reveal that the ab -face resistance in the free flux flow regime is a solely logarithmic function of H , devoid of any power-law component. Reanalysis of published data confirms this result and leads to empirical analytical forms for the ab plane and c axis resistivities, ρab∝H3/4 , which does not obey the expected Bardeen-Stephen result for free flux flow and ρc∝H-3/4log2H .

Possible standoff detection of ionizing radiation using high-power THz electromagnetic waves

NASA Astrophysics Data System (ADS)

Nusinovich, Gregory S.; Sprangle, Phillip; Romero-Talamas, Carlos A.; Rodgers, John; Pu, Ruifeng; Kashyn, Dmytro G.; Antonsen, Thomas M., Jr.; Granatstein, Victor L.

2012-06-01

Recently, a new method of remote detection of concealed radioactive materials was proposed. This method is based on focusing high-power short wavelength electromagnetic radiation in a small volume where the wave electric field exceeds the breakdown threshold. In the presence of free electrons caused by ionizing radiation, in this volume an avalanche discharge can then be initiated. When the wavelength is short enough, the probability of having even one free electron in this small volume in the absence of additional sources of ionization is low. Hence, a high breakdown rate will indicate that in the vicinity of this volume there are some materials causing ionization of air. To prove this concept a 0.67 THz gyrotron delivering 200-300 kW power in 10 microsecond pulses is under development. This method of standoff detection of concealed sources of ionizing radiation requires a wide range of studies, viz., evaluation of possible range, THz power and pulse duration, production of free electrons in air by gamma rays penetrating through container walls, statistical delay time in initiation of the breakdown in the case of low electron density, temporal evolution of plasma structure in the breakdown and scattering of THz radiation from small plasma objects. Most of these issues are discussed in the paper.

Transmission line transformer for reliable and low-jitter triggering of a railgap switch

NASA Astrophysics Data System (ADS)

Verma, Rishi; Mishra, Ekansh; Sagar, Karuna; Meena, Manraj; Shyam, Anurag

2014-09-01

The performance of railgap switch critically relies upon multichannel breakdown between the extended electrodes (rails) in order to ensure distributed current transfer along electrode length and to minimize the switch inductance. The initiation of several simultaneous arc channels along the switch length depends on the gap triggering technique and on the rate at which the electric field changes within the gap. This paper presents design, construction, and output characteristics of a coaxial cable based three-stage transmission line transformer (TLT) that is capable of initiating multichannel breakdown in a high voltage, low inductance railgap switch. In each stage three identical lengths of URM67 coaxial cables have been used in parallel and they have been wounded in separate cassettes to enhance the isolation of the output of transformer from the input. The cascaded output impedance of TLT is ˜50 Ω. Along with multi-channel formation over the complete length of electrode rails, significant reduction in jitter (≤2 ns) and conduction delay (≤60 ns) has been observed by the realization of large amplitude (˜80 kV), high dV/dt (˜6 kV/ns) pulse produced by the indigenously developed TLT based trigger generator. The superior performance of TLT over conventional pulse transformer for railgap triggering application has been compared and demonstrated experimentally.

Transmission line transformer for reliable and low-jitter triggering of a railgap switch.

PubMed

Verma, Rishi; Mishra, Ekansh; Sagar, Karuna; Meena, Manraj; Shyam, Anurag

2014-09-01

The performance of railgap switch critically relies upon multichannel breakdown between the extended electrodes (rails) in order to ensure distributed current transfer along electrode length and to minimize the switch inductance. The initiation of several simultaneous arc channels along the switch length depends on the gap triggering technique and on the rate at which the electric field changes within the gap. This paper presents design, construction, and output characteristics of a coaxial cable based three-stage transmission line transformer (TLT) that is capable of initiating multichannel breakdown in a high voltage, low inductance railgap switch. In each stage three identical lengths of URM67 coaxial cables have been used in parallel and they have been wounded in separate cassettes to enhance the isolation of the output of transformer from the input. The cascaded output impedance of TLT is ~50 Ω. Along with multi-channel formation over the complete length of electrode rails, significant reduction in jitter (≤2 ns) and conduction delay (≤60 ns) has been observed by the realization of large amplitude (~80 kV), high dV/dt (~6 kV/ns) pulse produced by the indigenously developed TLT based trigger generator. The superior performance of TLT over conventional pulse transformer for railgap triggering application has been compared and demonstrated experimentally.

The Development and Practical Use of A New 24kV Dry Air Insulated Switchgear

NASA Astrophysics Data System (ADS)

Yoshida, Tadahiro; Yano, Tomotaka; Tohya, Nobumoto; Inoue, Naoaki; Arioka, Masahiro; Sato, Shinji; Takeuchi, Toshie

We have developed a new environmentally fitted 24kV cubicle-type gas insulated switchgear (C-GIS) applying our dry air insulation technology and the electromagnetic actuation technology. Firstly, we clarified the relationship between the breakdown field strength at the tip/edge of high-voltage electrode in dry air and the field utilization factor expressing non-uniformity of the insulation gap. Based on the relationship, we designed the most suitable configuration and arrangement of the parts such as high-voltage conductors, disconnecting blades and some mechanical parts in a gas vessel. We succeeded in reducing both the number of insulation barriers and their size, compared with the former product. To reduce them, we produced some sample gaps simulated a practical insulation gap in the C-GIS and investigated its breakdown voltage dependence on the barrier height. Secondly, to apply the electromagnetic actuators for the operation mechanisms of the vacuum circuit breaker, we developed a new coupled analysis method that estimates the movement of a plunger inside the electromagnetic actuator and the electric current flowing through a closing/opening coil. Based on the analysis method, we could reduce both the number of the parts and close/open energy 45% and 80%, respectively, compared with the former spring-charged mechanism.

Inner surface flash-over of insulator of low-inductance high-voltage self-breakdown gas switch and its application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Hong-bo, E-mail: walkman67@163.com; Liu, Jin-liang

2014-04-15

In this paper, the inner surface flash-over of high-voltage self-breakdown switch, which is used as a main switch of pulse modulator, is analyzed in theory by employing the method of distributed element equivalent circuit. Moreover, the field distortion of the switch is simulated by using software. The results of theoretical analysis and simulation by software show that the inner surface flash-over usually starts at the junction points among the stainless steel, insulator, and insulation gas in the switch. A switch with improved structure is designed and fabricated according to the theoretical analysis and simulation results. Several methods to avoid innermore » surface flash-over are used to improve the structure of switch. In experiment, the inductance of the switch is no more than 100 nH, the working voltage of the switch is about 600 kV, and the output voltage and current of the accelerator is about 500 kV and 50 kA, respectively. And the zero-to-peak rise time of output voltage at matched load is less than 30 ns due to the small inductance of switch. The original switch was broken-down after dozens of experiments, and the improved switch has been worked more than 200 times stably.« less

Scanning-SQUID investigation of spin-orbit torque acting on yttrium iron garnet devices

NASA Astrophysics Data System (ADS)

Rosenberg, Aaron J.; Jermain, Colin L.; Aradhya, Sriharsha V.; Brangham, Jack T.; Nowack, Katja C.; Kirtley, John R.; Yang, Fengyuan; Ralph, Daniel C.; Moler, Kathryn A.

Successful manipulation of electrically insulating magnets, such as yttrium iron garnet, by by current-driven spin-orbit torques could provide a highly efficient platform for spintronic memory. Compared to devices fabricated using magnetic metals, magnetic insulators have the advantage of the ultra-low magnetic damping and the elimination of shunting currents in the magnet that reduce the torque efficiency. Here, we apply current in the spin Hall metal β-Ta to manipulate the magnetic orientation of micron-sized, electrically-insulating yttrium iron garnet devices. We do not observe spin-torque switching even for applied currents well above the critical current expected in a macrospin switching model. This suggests either inefficient transfer of spin torque at our Ta/YIG interface or a breakdown of the macrospin approximation. This work is supported by FAME, one of six centers of STARnet sponsored by MARCO and DARPA. The SQUID microscope and sensors were developed with support from the NSF-sponsored Center NSF-NSEC 0830228, and from NSF IMR-MIP 0957616.

Mathematical Fluid Dynamics of Plasma Flow Control Over High Speed Wings

DTIC Science & Technology

2009-02-01

decreased voltage; e= 8, d= 1 mm. electrode u fe ^mmm^^n/* Fyd electrode Fig. 23 Schematics of momentum and heat source distributions for...For a>25°, the influence of DBD on the vortex breakdown is not so clear, because the breakdown point is very close to the wing apex in all three

AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f{sub max} as high as 100 GHz

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mokerov, V. G., E-mail: vgmokerov@yandex.ru; Kuznetsov, A. L.; Fedorov, Yu. V.

2009-04-15

The N-Al{sub 0.27}Ga{sub 0.73}N/GaN High Electron Mobility Transistors (HEMTs) with different gate lengths L{sub g} (ranging from 170 nm to 0.5 {mu}m) and gate widths W{sub s} (ranging from 100 to 1200 {mu}m) have been studied. The S parameters have been measured; these parameters have been used to determine the current-gain cutoff frequency f{sub t}, the maximum oscillation frequency f{sub max}, and the power gain MSG/MAG and Mason's coefficients were investigated in the frequency range from 10 MHz to 67 GHz in relation to the gate length and gate width. It was found that the frequencies f{sub t} and f{submore » max} attain their maximum values of f{sub t} = 48 GHz and f{sub max} = 100 GHz at L{sub g} = 170 nm and W{sub g} = 100 {mu}m. The optimum values of W{sub g} and output power P out of the basic transistors have been determined for different frequencies of operation. It has also been demonstrated that the 170 nm Al{sub 0.27}Ga{sub 0.73}N/GaN HEMT technology provides both good frequency characteristics and high breakdown voltages and is very promising for high-frequency applications (up to 40 GHz)« less

Does Initial Leaf Chemistry Affect the Contribution of Insects, Fungi, and Bacteria to Leaf Breakdown in a Lowland Tropical Stream?

NASA Astrophysics Data System (ADS)

Ardon, M.; Pringle, C. M.

2005-05-01

We examined effects of initial leaf chemistry of six common riparian species on the relative contribution of fungi, bacteria, and invertebrates to leaf breakdown in a lowland stream in Costa Rica. We hypothesized that fungi and bacteria would contribute more to the breakdown of species with low concentrations of secondary (tannins and phenolics) and structural (cellulose and lignin) compounds, while invertebrates would be more important in the processing of species with high concentrations of secondary and structural compounds. We incubated single species leaf bags of six common riparian species, representing a range in secondary and structural compounds, in a third-order stream at La Selva Biological Station, Costa Rica. We measured leaf chemistry during the breakdown process. We determined fungal biomass using ergosterol methods, bacteria using DAPI counts, and invertebrate biomass using length-weight regressions. We then used biomass estimates for each group to determine their contribution to the overall breakdown process. Breakdown rates ranged from very fast (Trema integerima, k = 0.23 day-1) to slow (Zygia longifolia , k = 0.011 day-1). While analyses are still under way, preliminary results support our initial hypothesis that fungi contribute more to the break down of leaves from tree species with low concentrations of secondary and structural compounds.

Time-dependent dielectric breakdown in pure and lightly Al-doped Ta2O5 stacks

NASA Astrophysics Data System (ADS)

Atanassova, E.; Stojadinović, N.; Spassov, D.; Manić, I.; Paskaleva, A.

2013-05-01

The time-dependent dielectric breakdown (TDDB) characteristics of 7 nm pure and lightly Al-doped Ta2O5 (equivalent oxide thickness of 2.2 and 1.5 nm, respectively) with W gate electrodes in MOS capacitor configuration are studied using gate injection and constant voltage stress. The effect of both the process-induced defects and the dopant on the breakdown distribution, and on the extracted Weibull slope values, are discussed. The pre-existing traps which provoke weak spots dictate early breakdowns. Their effect is compounded of both the stress-induced new traps generation (percolation model is valid) and the inevitable lower-k interface layer in the region with long time-to-breakdown. The domination of one of these competitive effects defines the mechanism of degradation: the trapping at pre-existing traps appears to dominate in Ta2O5; Al doping reduces defects in Ta2O5, the generation of new traps prevails over the charge trapping in the doped samples, and the mechanism of breakdown is more adequate to the percolation concept. The doping of high-k Ta2O5 even with small amount (5 at.%) may serve as an engineering solution for improving its TDDB characteristics and reliability.

High density associative memory

NASA Technical Reports Server (NTRS)

Moopenn, Alexander W. (Inventor); Thakoor, Anilkumar P. (Inventor); Daud, Taher (Inventor); Lambe, John J. (Inventor)

1989-01-01

A multi-layered, thin-film, digital memory having associative recall. There is a first memory matrix and a second memory matrix. Each memory matrix comprises, a first layer comprising a plurality of electrically separated row conductors; a second layer comprising a plurality of electrically separated column conductors intersecting but electrically separated from the row conductors; and, a plurality of resistance elements electrically connected between the row condutors and the column conductors at respective intersections of the row conductors and the column conductors, each resistance element comprising, in series, a first resistor of sufficiently high ohmage to conduct a sensible element current therethrough with virtually no heat-generating power consumption when a low voltage as employed in thin-film applications is applied thereacross and a second resistor of sufficiently high ohmage to conduct no sensible current therethrough when a low voltage as employed in thin-film applications is applied thereacross, the second resistor having the quality of breaking down to create a short therethrough upon the application of a breakdown level voltage across the first and second resistors.

A breakdown enhanced AlGaN/GaN MISFET with source-connected P-buried layer

NASA Astrophysics Data System (ADS)

Luo, Xin; Wang, Ying; Cao, Fei; Yu, Cheng-Hao; Fei, Xin-Xing

2017-12-01

This paper presents a breakdown-enhanced AlGaN/GaN MISFET with a source-connected P-buried layer combined with field plates (SC-PBL FPs MISFET). A TCAD tool was used to analyze the breakdown characteristics of the proposed structure, and results show that in comparison to the conventional gate field plate MISFET (GFP-C MISFET), the proposed structure provides a significant increase of breakdown voltage (VBK) due to redistribution of electric field in the gate-drain region induced by the SC-PBL and the FPs. The optimized SC-PBL FPs MISFET with a gate-drain spacing of 6 μm achieved a high Baliga's figure of merit of 2.6 GW cm-2 with a corresponding breakdown voltage (VBK) of 1311.62 V and specific on resistance (RON,sp) of 0.66 mΩ cm2, which demonstrates a good trade-off between RON,sp and VBK compared to the GFP-C MISFET with VBK of 524.27 V and RON,sp of 0.61 mΩ cm2.

Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3 MV cm‑1

NASA Astrophysics Data System (ADS)

Mandal, S.; Kanathila, M. B.; Pynn, C. D.; Li, W.; Gao, J.; Margalith, T.; Laurent, M. A.; Chowdhury, S.

2018-06-01

We report on the first observation of avalanche electroluminescence resulting from band-to-band recombination (BTBR) of electron hole pairs at the breakdown limit of Gallium Nitride p-n diodes grown homo-epitaxially on single crystalline GaN substrates. The diodes demonstrated a near ideal breakdown electric field of 3 MV cm‑1 with electroluminescence (EL) demonstrating sharp peaks of emission energies near and at the band gap of GaN. The high critical electric field, near the material limit of GaN, was achieved by generating a smooth curved mesa edge with low plasma damage, using etch engineering without any use of field termination. The superior material quality was critical for such a near-ideal performance. An electric field of 3 MV cm‑1 recorded at the breakdown resulted in impact ionization, confirmed by a positive temperature dependence of the breakdown voltage. The spectral data provided evidence of BTBR of electron hole pairs that were generated by avalanche carrier multiplication in the depletion region.

EC assisted start-up experiments reproduction in FTU and AUG for simulations of the ITER case

DOE Office of Scientific and Technical Information (OSTI.GOV)

Granucci, G.; Ricci, D.; Farina, D.

The breakdown and plasma start-up in ITER are well known issues studied in the last few years in many tokamaks with the aid of calculation based on simplified modeling. The thickness of ITER metallic wall and the voltage limits of the Central Solenoid Power Supply strongly limit the maximum toroidal electric field achievable (0.3 V/m), well below the level used in the present generation of tokamaks. In order to have a safe and robust breakdown, the use of Electron Cyclotron Power to assist plasma formation and current rump up has been foreseen. This has raised attention on plasma formation phasemore » in presence of EC wave, especially in order to predict the required power for a robust breakdown in ITER. Few detailed theory studies have been performed up to nowadays, due to the complexity of the problems. A simplified approach, extended from that proposed in ref[1] has been developed including a impurity multispecies distribution and an EC wave propagation and absorption based on GRAY code. This integrated model (BK0D) has been benchmarked on ohmic and EC assisted experiments on FTU and AUG, finding the key aspects for a good reproduction of data. On the basis of this, the simulation has been devoted to understand the best configuration for ITER case. The dependency of impurity distribution content and neutral gas pressure limits has been considered. As results of the analysis a reasonable amount of power (1 - 2 MW) seems to be enough to extend in a significant way the breakdown and current start up capability of ITER. The work reports the FTU data reproduction and the ITER case simulations.« less

Effect of BaTiO3 nano-particles on breakdown performance of propylene carbonate.

PubMed

Hou, Yanpan; Zhang, Zicheng; Zhang, Jiande; Liu, Zhuofeng; Song, Zuyin

2015-05-01

As an alternative to water, propylene carbonate (PC) has a good application prospect in the compact pulsed power sources for its breakdown strength higher than that of water, resistivity bigger than 10(9) Ω m, and low freezing temperature (-49 °C). In this paper, the investigation into dielectric breakdown of PC and PC-based nano-fluids (NFs) subjected to high amplitude electric field is presented with microsecond pulses applied to a 1 mm gap full of PC or NFs between spherical electrodes. One kind of NF is composed of PC mixed with 0.5-1.4 vol. % BaTiO3 (BT) nano-particles of mean diameter ≈100 nm and another is mixed with 0.3-0.8 vol. % BT nano-particles of mean diameter ≈30 nm. The experimental results demonstrate the rise of permittivity and improvement of the breakdown strength of NFs compared with PC. Moreover, it is found that there exists an optimum fraction for these NFs corresponding to tremendous surface area in nano-composites with finite mesoscopic thickness. In concrete, the dielectric breakdown voltage of NFs is 33% higher than that of PC as the volume concentration of nano-particles with a 100 nm diameter is 0.9% and the breakdown voltage of NFs is 40% higher as the volume concentration of nano-particles with a 30 nm diameter is 0.6%. These phenomena are considered as the dielectric breakdown voltage of PC-based NFs is increased because the interfaces between nano-fillers and PC matrices provide myriad trap sites for charge carriers, which play a dominant role in the breakdown performance of NFs.

Time-Resolved Images of Laser-Induced Gas Ignition Using High-Speed Photographic and Spectroscopic Techniques

NASA Astrophysics Data System (ADS)

Chen, Ying-Ling; Lewis, J. W. L.; Parigger, C. G.

1997-11-01

Two-dimensional visualization of laser-induced spark ignition in atmospheric-pressure gases is reported. Laser-induced breakdown in air, O2 and combustible NH_3/O2 mixture was achieved using a 1064 nm, Nd:YAG laser of approximately 6 ns pulse width, focused at 10-mm above a 60-mm diameter flat-flame burner. An argon sheath-gas flow was used to stabilize the core flowfield. High-speed photographic techniques were applied to trace a complete sequence of kernel development of a single breakdown or ignition event. Thermochemical characteristics of the post-breakdown regime were analyzed by laser-induced fluorescence spectroscopy (LIFS). Spatial distribution of NH free radical observed by planar-LIF showed the contours of the developing flame-front. The corresponding NH temperature maps achieved by excitation LIFS and Boltzmann plot are also presented.

Comparative assessment of the breakdown of high-molecular flocculants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baichenko, A.A.; Baichenko, A.A.; Kaminskii, V.S.

1977-01-01

In recent years, a much wider range of water-soluble polymer flocculants has come into use to accelerate the clarification of coal and clay-coal suspensions, in which the solid phase comprises flotation tailings or slurry. The major distinguishing feature in this development has been the switch from gel-type flocculants to granular or powder types. Difficulties arise in the use of flocculants, from the relative ease with which they break down during storage or solution preparation. Different polymers behave differently under the same mechanical or chemical forces. Failure to appreciate this often leads to erroneous conclusions regarding the specific effectiveness of variousmore » flocculants. Breakdown data are described on various high-molecular flocculants, showing that the major factors that influence the breakdown of polyoxyethylene (POE) can be traced in other polymer flocculants as well.« less

High-Voltage, High-Power Gaseous Electronics Switch For Electric Grid Power Conversion

NASA Astrophysics Data System (ADS)

Sommerer, Timothy J.

2014-05-01

We are developing a high-voltage, high-power gas switch for use in low-cost power conversion terminals on the electric power grid. Direct-current (dc) power transmission has many advantages over alternating current (ac) transmission, but at present the high cost of ac-dc power interconversion limits the use of dc. The gas switch we are developing conducts current through a magnetized cold cathode plasma in hydrogen or helium to reach practical current densities > 1 A/cm2. Thermal and sputter damage of the cathode by the incident ion flux is a major technical risk, and is being addressed through use of a ``self-healing'' liquid metal cathode (eg, gallium). Plasma conditions and cathode sputtering loss are estimated by analyzing plasma spectral emission. A particle-in-cell plasma model is used to understand various aspects of switch operation, including the conduction phase (where plasma densities can exceed 1013 cm-3), the switch-open phase (where the high-voltage must be held against gas breakdown on the left side of Paschen's curve), and the switching transitions (especially the opening process, which is initiated by forming an ion-matrix sheath adjacent to a control grid). The information, data, or work presented herein was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000298.

Inductive gas line for pulsed lasers

DOEpatents

Benett, William J.; Alger, Terry W.

1985-01-01

A gas laser having a metal inlet gas feed line assembly shaped as a coil, to function as an electrical inductance and therefore high impedance to pulses of electric current applied to electrodes at opposite ends of a discharge tube of a laser, for example. This eliminates a discharge path for the laser through the inlet gas feed line. A ferrite core extends through the coil to increase the inductance of the coil and provide better electric isolation. By elimination of any discharge breakdown through the gas supply, efficiency is increased and a significantly longer operating lifetime of the laser is provided.

Inductive gas line for pulsed lasers

DOEpatents

Benett, W.J.; Alger, T.W.

1982-09-29

A gas laser having a metal inlet gas feed line assembly shaped as a coil, to function as an electrical inductance and therefore high impedance to pulses of electric current applied to electrodes at opposite ends of a discharge tube of a laser, for example. This eliminates a discharge path for the laser through the inlet gas feed line. A ferrite core extends through the coil to increase the inductance of the coil and provide better electric isolation. By elimination of any discharge breakdown through the gas supply, efficiency is increased and a significantly longer operating lifetime of the laser is provided.

Correlation of Electron-Transfer Rates with the Surface Density of States of Native and Anodically Grown Oxide Films on Titanium

DTIC Science & Technology

1990-11-16

materials. v :67:RiB T7;N, AVAILA81UTY CF ABS-.RAC- 21. ABSTRAC7 SEC-RTY C .SSi~ CAT ;CN X NC_SSF:E- /UNL:MITE- : C SA.ME AS ;P’ C C jSE’S Unclassified i...value in ambient environments. Localized breakdown of the native film occurs in chemically aggresive environments (e.g., aqueous Br- solutions...oxide film, Fig. 1 (c), show highly rectifying behavior , in agreement with expectations for a large band gap semiconductor. The tunneling current at each

Effect of electrode gap on the sensing properties of multiwalled carbon nanotubes based gas sensor

NASA Astrophysics Data System (ADS)

Saheed, Mohamed Shuaib Mohamed; Mohamed, Norani Muti; Burhanudin, Zainal Arif

2016-11-01

Vertically aligned multiwalled carbon nanotubes (MWCNT) were grown on Si substrate coated with alumina and iron using chemical vapor deposition. Electrode gap of 10, 25 and 50 µm were adopted to determine the effect of varying gap spacing on the sensing properties such as voltage breakdown, sensitivity and selectivity for three gases namely argon, carbon dioxide and ammonia. Argon has the lowest voltage breakdown for every electrode gap. The fabricated MWCNT based gas sensor drastically reduced the voltage breakdown by 89.5% when the electrode spacing is reduced from 50 µm to 10 µm. The reduction is attributed to the high non-uniform electric field between the electrodes caused by the protrusion of nanotips. The sensor shows good sensitivity and selectivity with the ability to detect the gas in the mixture with air provided that the concentration is ≥ 20% where the voltage breakdown will be close to the pure gas.

Enhanced Optical Breakdown in KB Cells Labeled with Folate-Targeted Silver/Dendrimer Composite Nanodevices

PubMed Central

Tse, Christine; Zohdy, Marwa J.; Ye, Jing Yong; O'Donnell, Matthew; Lesniak, Wojciech; Balogh, Lajos

2010-01-01

Enhanced optical breakdown of KB cells (a human oral epidermoid cancer cell known to overexpress folate receptors) targeted with silver/dendrimer composite nanodevices (CNDs) is described. CNDs {(Ag0}25-PAMAM_E5.(NH2)42(NGly)74(NFA)2.7} were fabricated by reactive encapsulation, using a biocompatible template of dendrimer-folic acid (FA) conjugates. Preferential uptake of the folate-targeted CNDs (of various treatment concentrations and surface functionality) by KB cells was visualized with confocal microscopy and transmission electron microscopy (TEM). Intracellular laser-induced optical breakdown (LIOB) threshold and dynamics were detected and characterized by high-frequency ultrasonic monitoring of resulting transient bubble events. When irradiated with a near-infrared (NIR), femtosecond laser, the CND-targeted KB cells acted as well-confined activators of laser energy, enhancing nonlinear energy absorption, exhibiting a significant reduction in breakdown threshold, and thus selectively promoting intracellular LIOB. PMID:20883823

Post-breakdown secondary discharges at the electrode/dielectric interface of a cylindrical barrier discharge

NASA Astrophysics Data System (ADS)

Carman, Robert; Ward, Barry; Kane, Deborah

2011-10-01

The electrical breakdown characteristics of a double-walled cylindrical dielectric barrier discharge (DBD) lamp with a neon buffer gas under pulsed voltage excitation have been investigated. Following the formation of plasma in the main discharge gap, we have observed secondary breakdown phenomena at the inner and outer mesh electrode/dielectric interfaces under specific operating conditions. Plasma formation at these interfaces is investigated by monitoring the Ozone production rate in controlled flows of ultra high purity oxygen together with the overall electrical voltage-charge characteristics of the lamp. The results show that this secondary breakdown only occurs after the main discharge plasma has been established, and that significant electrical power may be dissipated in generating these spurious secondary plasmas. The results are important with regards to optimising the design and identifying efficient operating regimes of DBD based devices that employ mesh-type or wire/strip electrodes.

Blackbody emission from laser breakdown in high-pressure gases.

PubMed

Bataller, A; Plateau, G R; Kappus, B; Putterman, S

2014-08-15

Laser induced breakdown of pressurized gases is used to generate plasmas under conditions where the atomic density and temperature are similar to those found in sonoluminescing bubbles. Calibrated streak spectroscopy reveals that a blackbody persists well after the exciting femtosecond laser pulse has turned off. Deviation from Saha's equation of state and an accompanying large reduction in ionization potential are observed at unexpectedly low atomic densities-in parallel with sonoluminescence. In laser breakdown, energy input proceeds via excitation of electrons whereas in sonoluminescence it is initiated via the atoms. The similar responses indicate that these systems are revealing the thermodynamics and transport of a strongly coupled plasma.

Blackbody Emission from Laser Breakdown in High-Pressure Gases

NASA Astrophysics Data System (ADS)

Bataller, A.; Plateau, G. R.; Kappus, B.; Putterman, S.

2014-08-01

Laser induced breakdown of pressurized gases is used to generate plasmas under conditions where the atomic density and temperature are similar to those found in sonoluminescing bubbles. Calibrated streak spectroscopy reveals that a blackbody persists well after the exciting femtosecond laser pulse has turned off. Deviation from Saha's equation of state and an accompanying large reduction in ionization potential are observed at unexpectedly low atomic densities—in parallel with sonoluminescence. In laser breakdown, energy input proceeds via excitation of electrons whereas in sonoluminescence it is initiated via the atoms. The similar responses indicate that these systems are revealing the thermodynamics and transport of a strongly coupled plasma.

Investigation of the novel attributes in double recessed gate SiC MESFETs at drain side

NASA Astrophysics Data System (ADS)

Orouji, Ali A.; Razavi, S. M.; Ebrahim Hosseini, Seyed; Amini Moghadam, Hamid

2011-11-01

In this paper, the potential impact of drain side-double recessed gate (DS-DRG) on silicon carbide (SiC)-based metal semiconductor field effect transistors (MESFETs) is studied. We investigate the device performance focusing on breakdown voltage, threshold voltage, drain current and dc output conductance with two-dimensional and two-carrier device simulation. Our simulation results demonstrate that the channel thickness under the gate in the drain side is an important factor in the breakdown voltage. Also, the positive shift in the threshold voltage for the DS-DRG structure is larger in comparison with that for the source side-double recessed gate (SS-DRG) SiC MESFET. The saturated drain current for the DS-DRG structure is larger compared to that for the SS-DRG structure. The maximum dc output conductance in the DS-DRG structure is smaller than that in the SS-DRG structure.

Electrical model of dielectric barrier discharge homogenous and filamentary modes

NASA Astrophysics Data System (ADS)

López-Fernandez, J. A.; Peña-Eguiluz, R.; López-Callejas, R.; Mercado-Cabrera, A.; Valencia-Alvarado, R.; Muñoz-Castro, A.; Rodríguez-Méndez, B. G.

2017-01-01

This work proposes an electrical model that combines homogeneous and filamentary modes of an atmospheric pressure dielectric barrier discharge cell. A voltage controlled electric current source has been utilized to implement the power law equation that represents the homogeneous discharge mode, which starts when the gas breakdown voltage is reached. The filamentary mode implies the emergence of electric current conducting channels (microdischarges), to add this phenomenon an RC circuit commutated by an ideal switch has been proposed. The switch activation occurs at a higher voltage level than the gas breakdown voltage because it is necessary to impose a huge electric field that contributes to the appearance of streamers. The model allows the estimation of several electric parameters inside the reactor that cannot be measured. Also, it is possible to appreciate the modes of the DBD depending on the applied voltage magnitude. Finally, it has been recognized a good agreement between simulation outcomes and experimental results.

Novel trench gate field stop IGBT with trench shorted anode

NASA Astrophysics Data System (ADS)

Xudong, Chen; Jianbing, Cheng; Guobing, Teng; Houdong, Guo

2016-05-01

A novel trench field stop (FS) insulated gate bipolar transistor (IGBT) with a trench shorted anode (TSA) is proposed. By introducing a trench shorted anode, the TSA-FS-IGBT can obviously improve the breakdown voltage. As the simulation results show, the breakdown voltage is improved by a factor of 19.5% with a lower leakage current compared with the conventional FS-IGBT. The turn off time of the proposed structure is 50% lower than the conventional one with less than 9% voltage drop increased at a current density of 150 A/cm2. Additionally, there is no snapback observed. As a result, the TSA-FS-IGBT has a better trade-off relationship between the turn off loss and forward drop. Project supported by the National Natural Science Foundation of China (No. 61274080) and the Postdoctoral Science Foundation of China (No. 2013M541585).

Breakdown Voltage of CF3CHCl2 gas an Alternative to SF6 Gas using HV Test and Bonding Energy Methods

NASA Astrophysics Data System (ADS)

Juliandhy, Tedy; Haryono, T.; Suharyanto; Perdana, Indra

2018-04-01

For more than two decades of Sulphur Hexafluoride (SF6) gases is used as a gas insulation in high voltage equipment especially in substations. In addition to getting an advantage as an insulating gas. SF6 gas is recognized as one of the greenhouse effect gases that cause global warming. Under the Kyoto Protocol, SF6 gas is one of those gases whose use is restricted and gradually reduced to the presence of a replacement gas for SF6 gas. One of the alternative gas alternatives which have the potential of replacing SF6 gas as an insulating gas in Gas Insulated Switchgear (GIS) equipment in the substation is Dichlorotrifluoroethane (CF3CHCl2) gas. The purpose of this paper is to enable a comparison of breakdown voltage with high voltage test and method of calculating Bonding energy to Dichlorotrifluoroethane gas as substitute gas for SF6 gas. At 0.1 bar gas pressure obtained an average breakdown voltage of 18.68 kV / mm at 25oC chamber temperature and has the highest breakdown voltage at 50oC with a breakdown voltage of 19.56 kV / mm. The CF3CHCl2 gas has great potential as an insulating gas because it has more insulation ability high of SF6 gas, and is part of the gas recommended under the Kyoto Protocol. Gas CF3CHCl2 has the capacity to double the value of electronegativity greater than SF6 gas as a major requirement of gas isolation and has a value of Global Warming Potential (GWP) and Ozone Depleting lower than from SF6 gas.

Plasma physics and related challenges of millimeter-wave-to-terahertz and high power microwave generationa)

NASA Astrophysics Data System (ADS)

Booske, John H.

2008-05-01

Homeland security and military defense technology considerations have stimulated intense interest in mobile, high power sources of millimeter-wave (mmw) to terahertz (THz) regime electromagnetic radiation, from 0.1 to 10THz. While vacuum electronic sources are a natural choice for high power, the challenges have yet to be completely met for applications including noninvasive sensing of concealed weapons and dangerous agents, high-data-rate communications, high resolution radar, next generation acceleration drivers, and analysis of fluids and condensed matter. The compact size requirements for many of these high frequency sources require miniscule, microfabricated slow wave circuits. This necessitates electron beams with tiny transverse dimensions and potentially very high current densities for adequate gain. Thus, an emerging family of microfabricated, vacuum electronic devices share many of the same plasma physics challenges that are currently confronting "classic" high power microwave (HPM) generators including long-life bright electron beam sources, intense beam transport, parasitic mode excitation, energetic electron interaction with surfaces, and rf air breakdown at output windows. The contemporary plasma physics and other related issues of compact, high power mmw-to-THz sources are compared and contrasted to those of HPM generation, and future research challenges and opportunities are discussed.

Electrical characteristics of thin Ta2O5 films deposited by reactive pulsed direct-current magnetron sputtering

NASA Astrophysics Data System (ADS)

Kim, J.-Y.; Nielsen, M. C.; Rymaszewski, E. J.; Lu, T.-M.

2000-02-01

Room temperature deposition of tantalum oxide films on metallized silicon substrates was investigated by reactive pulsed magnetron sputtering of Ta in an Ar/O2 ambient. The dielectric constant of the tantalum oxide ranged from 19 to 31 depending on the oxygen percentage [P(%)=PO2/(PO2+PAr)] used during sputtering. The leakage current density was less than 10 nA/cm2 at 0.5 MV/cm electric field and the dielectric breakdown field was greater than 3.8 MV/cm for P=60%. A charge storage as high as 3.3 μF/cm2 was achieved for 70-Å-thick film. Pulse frequency variation (from 20 to 200 kHz) did not give a significant effect in the electrical properties (dielectric constant or leakage current density) of the Ta2O5 films.

Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc 2O 3 gate dielectric or surface passivation

NASA Astrophysics Data System (ADS)

Luo, B.; Mehandru, R.; Kim, Jihyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Gotthold, D.; Birkhahn, R.; Peres, B.; Fitch, R. C.; Moser, N.; Gillespie, J. K.; Jessen, G. H.; Jenkins, T. J.; Yannuzi, M. J.; Via, G. D.; Crespo, A.

2003-10-01

The dc and power characteristics of AlGaN/GaN MOS-HEMTs with Sc 2O 3 gate dielectrics were compared with that of conventional metal-gate HEMTs fabricated on the same material. The MOS-HEMT shows higher saturated drain-source current (˜0.75 A/mm) and significantly better power-added efficiency (PAE, 27%) relative to the HEMT (˜0.6 A/mm and ˜5%). The Sc 2O 3 also provides effective surface passivation, with higher drain current, lower leakage currents and higher three-terminal breakdown voltage in passivated devices relative to unpassivated devices. The PAE also increases (from ˜5% to 12%) on the surface passivated HEMTs, showing that Sc 2O 3 is an attractive option for reducing gate and surface leakage in AlGaN/GaN heterostructure transistors.

Temperature and Electron Density Determination on Laser-Induced Breakdown Spectroscopy (LIBS) Plasmas: A Physical Chemistry Experiment

ERIC Educational Resources Information Center

Najarian, Maya L.; Chinni, Rosemarie C.

2013-01-01

This laboratory is designed for physical chemistry students to gain experience using laser-induced breakdown spectroscopy (LIBS) in understanding plasma diagnostics. LIBS uses a high-powered laser that is focused on the sample causing a plasma to form. The emission of this plasma is then spectrally resolved and detected. Temperature and electron…

Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H-SiC Schottky diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Y.; Ali, G.N.; Mikhov, M.K.

2005-01-01

Defects in SiC degrade the electrical properties and yield of devices made from this material. This article examines morphological defects in 4H-SiC and defects visible in electron beam-induced current (EBIC) images and their effects on the electrical characteristics of Schottky diodes. Optical Nomarski microscopy and atomic force microscopy were used to observe the morphological defects, which are classified into 26 types based on appearance alone. Forward and reverse current-voltage characteristics were used to extract barrier heights, ideality factors, and breakdown voltages. Barrier heights decrease about linearly with increasing ideality factor, which is explained by discrete patches of low barrier heightmore » within the main contact. Barrier height, ideality, and breakdown voltage all degrade with increasing device diameter, suggesting that discrete defects are responsible. Electroluminescence was observed under reverse bias from microplasmas associated with defects containing micropipes. EBIC measurements reveal several types of features corresponding to recombination centers. The density of dark spots observed by EBIC correlates strongly with ideality factor and barrier height. Most morphological defects do not affect the reverse characteristics when no micropipes are present, but lower the barrier height and worsen the ideality factor. However, certain multiple-tailed defects, irregularly shaped defects and triangular defects with 3C inclusions substantially degrade both breakdown voltage and barrier height, and account for most of the bad devices that do not contain micropipes. Micropipes in these wafers are also frequently found to be of Type II, which do not run parallel to the c axis.« less

Correlation Between Morphological Defects, Electron Beam Induced Current Imaging, and the Electrical Properties of 4H-SiC Schottky Diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang,Y.; Ali, G.; Mikhov, M.

2005-01-01

Defects in SiC degrade the electrical properties and yield of devices made from this material. This article examines morphological defects in 4H-SiC and defects visible in electron beam-induced current (EBIC) images and their effects on the electrical characteristics of Schottky diodes. Optical Nomarski microscopy and atomic force microscopy were used to observe the morphological defects, which are classified into 26 types based on appearance alone. Forward and reverse current-voltage characteristics were used to extract barrier heights, ideality factors, and breakdown voltages. Barrier heights decrease about linearly with increasing ideality factor, which is explained by discrete patches of low barrier heightmore » within the main contact. Barrier height, ideality, and breakdown voltage all degrade with increasing device diameter, suggesting that discrete defects are responsible. Electroluminescence was observed under reverse bias from microplasmas associated with defects containing micropipes. EBIC measurements reveal several types of features corresponding to recombination centers. The density of dark spots observed by EBIC correlates strongly with ideality factor and barrier height. Most morphological defects do not affect the reverse characteristics when no micropipes are present, but lower the barrier height and worsen the ideality factor. However, certain multiple-tailed defects, irregularly shaped defects and triangular defects with 3C inclusions substantially degrade both breakdown voltage and barrier height, and account for most of the bad devices that do not contain micropipes. Micropipes in these wafers are also frequently found to be of Type II, which do not run parallel to the c axis.« less

Discharge start-up and ramp-up development for NSTX-U and MAST-U

NASA Astrophysics Data System (ADS)

Battaglia, D. J.; Boyer, M. D.; Gerhardt, S. P.; Menard, J. E.; Mueller, D.; Cunningham, G.; Kirk, A.; Kogan, L.; McArdle, G.; Pangione, L.; Thornton, A. J.; Ren, E.

2017-10-01

A collaborative modeling effort is underway to develop robust inductive start-up and ramp-up scenarios for NSTX-U and MAST-U. These complementary spherical tokamak devices aim to generate the physics basis for achieving steady-state, high-beta and high-confinement plasma discharges with a self-consistent solution for managing the divertor heat flux. High-performance discharges in these devices require sufficient plasma elongation (κ = 2.4 - 2.8) to maximize the bootstrap and beam-driven current drive, increase MHD stability at high Ip and high βN, and realize advanced divertor geometries such as the snowflake and super-X. Achieving the target elongation on NSTX-U is enabled by an L-H transition in the current ramp-up that slows the current diffusion and maintains a low internal inductance (li <= 0.8). Modeling focuses on developing scenarios that achieve a suitable field null for breakdown and discharge conditions conducive to an early L-H transition while maintaining vertical and MHD stability, with appropriate margin for variation in experimental conditions. The toroidal currents induced in conducting structures and the specifications of the real-time control and power supply systems are unique constraints for the two devices. Work Supported by U.S. DOE Contract No. DE-AC02-09CH11466 and the RCUK Energy Programme [Grant Number EP/P012450/1].

Single-crystalline nanogap electrodes: enhancing the nanowire-breakdown process with a gaseous environment.

PubMed

Suga, Hiroshi; Sumiya, Touru; Furuta, Shigeo; Ueki, Ryuichi; Miyazawa, Yosuke; Nishijima, Takuya; Fujita, Jun-ichi; Tsukagoshi, Kazuhito; Shimizu, Tetsuo; Naitoh, Yasuhisa

2012-10-24

A method for fabricating single-crystalline nanogaps on Si substrates was developed. Polycrystalline Pt nanowires on Si substrates were broken down by current flow under various gaseous environments. The crystal structure of the nanogap electrode was evaluated using scanning electron microscopy and transmission electron microscopy. Nanogap electrodes sandwiched between Pt-large-crystal-grains were obtained by the breakdown of the wire in an O(2) or H(2) atmosphere. These nanogap electrodes show intense spots in the electron diffraction pattern. The diffraction pattern corresponds to Pt (111), indicating that single-crystal grains are grown by the electrical wire breakdown process in an O(2) or H(2) atmosphere. The Pt wires that have (111)-texture and coherent boundaries can be considered ideal as interconnectors for single molecular electronics. The simple method for fabrication of a single-crystalline nanogap is one of the first steps toward standard nanogap electrodes for single molecular instruments and opens the door to future research on physical phenomena in nanospaces.

Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices.

PubMed

Pejović, Milić M; Denić, Dragan B; Pejović, Momčilo M; Nešić, Nikola T; Vasović, Nikola

2010-10-01

This paper presents realization of a digital embedded system for measuring electrical breakdown time delay. The proposed system consists of three major parts: dc voltage supply, analog subsystem, and a digital subsystem. Any dc power source with the range from 100 to 1000 V can be used in this application. The analog subsystem should provide fast and accurate voltage switching on the testing device as well as transform the signals that represent the voltage pulse on the device and the device breakdown into the form suitable for detection by a digital subsystem. The insulated gate bipolar transistor IRG4PH40KD driven by TC429 MOSFET driver is used for high voltage switching on the device. The aim of a digital subsystem is to detect the signals from the analog subsystem and to measure the elapsed time between their occurrences. Moreover, the digital subsystem controls various parameters that influence time delay and provides fast data storage for a large number of measured data. For this propose, we used the PIC18F4550 microcontroller with a full-speed compatible universal serial bus (USB) engine. Operation of this system is verified on different commercial and custom made gas devices with different structure and breakdown mechanisms. The electrical breakdown time delay measurements have been carried out as a function of several parameters, which dominantly influence electrical breakdown time delay. The obtained results have been verified using statistical methods, and they show good agreement with the theory. The proposed system shows good repeatability, sensitivity, and stability for measuring the electrical breakdown time delay.

Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pejovic, Milic M.; Denic, Dragan B.; Pejovic, Momcilo M.

2010-10-15

This paper presents realization of a digital embedded system for measuring electrical breakdown time delay. The proposed system consists of three major parts: dc voltage supply, analog subsystem, and a digital subsystem. Any dc power source with the range from 100 to 1000 V can be used in this application. The analog subsystem should provide fast and accurate voltage switching on the testing device as well as transform the signals that represent the voltage pulse on the device and the device breakdown into the form suitable for detection by a digital subsystem. The insulated gate bipolar transistor IRG4PH40KD driven bymore » TC429 MOSFET driver is used for high voltage switching on the device. The aim of a digital subsystem is to detect the signals from the analog subsystem and to measure the elapsed time between their occurrences. Moreover, the digital subsystem controls various parameters that influence time delay and provides fast data storage for a large number of measured data. For this propose, we used the PIC18F4550 microcontroller with a full-speed compatible universal serial bus (USB) engine. Operation of this system is verified on different commercial and custom made gas devices with different structure and breakdown mechanisms. The electrical breakdown time delay measurements have been carried out as a function of several parameters, which dominantly influence electrical breakdown time delay. The obtained results have been verified using statistical methods, and they show good agreement with the theory. The proposed system shows good repeatability, sensitivity, and stability for measuring the electrical breakdown time delay.« less

Enhanced shock wave generation via pre-breakdown acceleration using water electrolysis in negative streamer pulsed spark discharges

NASA Astrophysics Data System (ADS)

Lee, Kern; Chung, Kyoung-Jae; Hwang, Y. S.

2018-03-01

This paper presents a method for enhancement of shock waves generated from underwater pulsed spark discharges with negative (anode-directed) subsonic streamers, for which the pre-breakdown process is accelerated by preconditioning a gap with water electrolysis. Hydrogen microbubbles are produced at the cathode by the electrolysis and move towards the anode during the preconditioning phase. The numbers and spatial distributions of the microbubbles vary with the amplitude and duration of each preconditioning pulse. Under our experimental conditions, the optimum pulse duration is determined to be ˜250 ms at a pulse voltage of 400 V, where the buoyancy force overwhelms the electric force and causes the microbubbles to be swept out from the water gap. When a high-voltage pulse is applied to the gap just after the preconditioning pulse, the pre-breakdown process is significantly accelerated in the presence of the microbubbles. At the optimum preconditioning pulse duration, the average breakdown delay is reduced by 87% and, more importantly, the energy consumed during the pre-breakdown period decreases by 83%. This reduced energy consumption during the pre-breakdown period, when combined with the morphological advantages of negative streamers, such as thicker and longer stalks, leads to a significant improvement in the measured peak pressure (˜40%) generated by the underwater pulsed spark discharge. This acceleration of pre-breakdown using electrolysis overcomes the biggest drawback of negative subsonic discharges, which is slow vapor bubble formation due to screening effects, and thus enhances the efficiency of the shock wave generation process using pulsed spark discharges in water.

High-Voltage Breakdown Penalties for the Beam-Breakup Instability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ekdahl, Carl August

2016-11-22

The strength of the dangerous beam breakup (BBU) instability in linear induction accelerators (LIAs) is determined by the transverse coupling impedance Z ⊥ of the induction cell cavity. For accelerating gap width w less than the beam pipe radius b, the transverse impedance is theoretically proportional to w/b, favoring narrow gaps to suppress BBU. On the other hand, cells with narrow gaps cannot support high accelerating gradients, because of electrical breakdown and shorting of the gap. Thus, there is an engineering trade-off between BBU growth and accelerating gradient, which must be considered for next generation LIAs now being designed. Inmore » this article this tradeoff is explored, using a simple pillbox cavity as an illustrative example. For this model, widening the gap to reduce the probability of breakdown increases BBU growth, unless higher magnetic focusing fields are used to further suppress the instability.« less

The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM

NASA Astrophysics Data System (ADS)

Shen, Lingyan; Müller, Stephan; Cheng, Xinhong; Zhang, Dongliang; Zheng, Li; Xu, Dawei; Yu, Yuehui; Meissner, Elke; Erlbacher, Tobias

2018-02-01

A novel GaN trench gate (TG) MOSFET with P-type floating islands (FLI) in drift region, which can suppress the electric field peak at bottom of gate trench during the blocking state and prevent premature breakdown in gate oxide, is proposed and investigated by TCAD simulations. The influence of thickness, position, doping concentration and length of the FLI on breakdown voltage (BV) and specific on-resistance (Ron_sp) is studied, providing useful guidelines for design of this new type of device. Using optimized parameters for the FLI, GaN FLI TG-MOSFET obtains a BV as high as 2464 V with a Ron_sp of 3.0 mΩ cm2. Compared to the conventional GaN TG-MOSFET with the same structure parameters, the Baliga figure of merit (BFOM) is enhanced by 150%, getting closer to theoretical limit for GaN devices.

Comparative analysis of cellulose pressboard and aramid paper used in air insulation systems of high-voltage devices

NASA Astrophysics Data System (ADS)

Turba, Tomasz; Frącz, Paweł

2017-10-01

The paper presents results of a comparative analysis of parameters of two kinds of solid dielectrics used in air insulation systems to prevent occurring partial discharges. The research works regarded materials made of: cellulose pressboard and aramid paper. All measurements were performed under laboratory conditions by changing the value of partial discharges generation voltage until breakdown occurred in the inhomogeneous environment that was simulated using needle-plate (made of copper) electrode system. The main contribution which resulted from studies is a statement that potential use of aramid paper as a dielectric can extend the life of a high voltage electric device as compared to standard cellulose pressboard usage due to higher electric resistances to breakdown or detection of corona voltage. Results shown that the aramid paper has greater electric resistance to breakdown in comparison to cellulose with no difference between both on detecting corona of partial discharge.

Formation of ball streamers at a subnanosecond breakdown of gases at a high pressure in a nonuniform electric field

NASA Astrophysics Data System (ADS)

Beloplotov, D. V.; Tarasenko, V. F.; Sorokin, D. A.; Lomaev, M. I.

2017-11-01

The formation of a diffuse discharge plasma at a subnanosecond breakdown of a "cone-plane" gap filled with air, nitrogen, methane, hydrogen, argon, neon, and helium at various pressures has been studied. Nanosecond negative and positive voltage pulses have been applied to the conical electrode. The experimental data on the dynamics of plasma glow at the stage of formation and propagation of a streamer have been obtained with intensified charge-coupled device and streak cameras. It has been found that the formation of ball streamers is observed in all gases and at both polarities. A supershort avalanche electron beam has been detected behind the flat foil electrode in a wide range of pressures in the case of a negatively charged conical electrode. A mechanism of the formation of streamers at breakdown of various gases at high overvoltages has been discussed.

Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode

NASA Astrophysics Data System (ADS)

Wang, Fangzhou; Chen, Wanjun; Wang, Zeheng; Sun, Ruize; Wei, Jin; Li, Xuan; Shi, Yijun; Jin, Xiaosheng; Xu, Xiaorui; Chen, Nan; Zhou, Qi; Zhang, Bo

2017-05-01

To achieve uniform low turn-on voltage and high reverse blocking capability, an AlGaN/GaN power field effect rectifier with trench heterojunction anode (THA-FER) is proposed and investigated in this work which includes only simulated data and no real experimental result. VT has a low saturation value when trench height (HT) is beyond 300 nm, confirming it is possible to control the VT accurately without precisely controlling the HT in the THA-FER. Meanwhile, high HT anode reduces reverse leakage current and yields high breakdown voltage (VB). A superior high Baliga's Figure of Merits (BFOM = VB2/Ron,sp, Ron,sp is specific-on resistance) of 1228 MW/cm2 reveals the THA-FER caters for the demands of high efficiency GaN power applications.

Characterization of plasma processing induced charging damage to MOS devices

NASA Astrophysics Data System (ADS)

Ma, Shawming

1997-12-01

Plasma processing has become an integral part of the fabrication of integrated circuits and takes at least 30% of whole process steps since it offers advantages in terms of directionality, low temperature and process convenience. However, wafer charging during plasma processes is a significant concern for both thin oxide damage and profile distortion. In this work, the factors affecting this damage will be explained by plasma issues, device structure and oxide quality. The SPORT (Stanford Plasma On-wafer Real Time) charging probe was developed to investigate the charging mechanism of different plasma processes including poly-Si etching, resist ashing and PECVD. The basic idea of this probe is that it simulates a real device structure in the plasma environment and allows measurement of plasma induced charging voltages and currents directly in real time. This measurement is fully compatible with other charging voltage measurement but it is the only one to do in real-time. Effect of magnetic field induced plasma nonuniformity on spatial dependent charging is well understood by this measurement. In addition, the plasma parameters including ion current density and electron temperature can also be extracted from the probe's plasma I-V characteristics using a dc Langmuir probe like theory. It will be shown that the MOS device tunneling current from charging, the dependence on antenna ratio and the etch uniformity can all be predicted by using this measurement. Moreover, the real-time measurement reveals transient and electrode edge effect during processing. Furthermore, high aspect ratio pattern induced electron shading effects can also be characterized by the probe. On the oxide quality issue, wafer temperature during plasma processing has been experimentally shown to be critical to charging damage. Finally, different MOS capacitor testing methods including breakdown voltage, charge-to-breakdown, gate leakage current and voltage-time at constant current bias were compared to find the optimum method for charging device reliability testing.

Analysis of the breakdown of the Antarctic circumpolar vortex using TOMS ozone data

NASA Technical Reports Server (NTRS)

Bowman, Kenneth P.

1987-01-01

Climatological analysis of data from the Total Ozone Mapping Spectrometer (TOMS) on the Nimbus 7 satellite has shown that the annual cycles of ozone are very different in the Arctic and Antarctic. The annual cycle in the Arctic is a relatively smooth annual sine wave; but in the Antarctic the circumpolar vortex breaks down rapidly during the Southern Hemisphere spring (September through November), producing a rapid rise in total ozone and a sawtooth-shaped annual cycle. The evolution of the Antarctic total ozone field during the vortex breakdown was studied by computing areally-integrated ozone amounts from the TOMS data. This technique avoids substantial difficulties with using zonally-averaged ozone amounts to study the asymmetric breakdown phenomenon. Variability of total ozone is found to be large both within an individual year and between different years. During the last decade monthly-mean total ozone values in the Antarctic during the springtime vortex breakdown period have decreased dramatically. The ozone-area statistics indicate that the decrease has resulted in part from changes in the timing of the vortex breakdown and resultant ozone increase, which have occurred later during recent years. Analysis of the spatial scales involved in the ozone transport and mixing that occur during the vortex breakdown is now underway. Reliable calculation of diagnostic quantities like areally-integrated ozone is possible only with the high-resolution, two-dimensional, daily coverage provided by the TOMS instrument.

42GHz ECRH assisted Plasma Breakdown in tokamak SST-1

NASA Astrophysics Data System (ADS)

Shukla, B. K.; Pradhan, S.; Patel, Paresh; Babu, Rajan; Patel, Jatin; Patel, Harshida; Dhorajia, Pragnesh; Tanna, V.; Atrey, P. K.; Manchanda, R.; Gupta, Manoj; Joisa, Shankar; Gupta, C. N.; Danial, Raju; Singh, Prashant; Jha, R.; Bora, D.

2015-03-01

In SST-1, 42GHz ECRH system has been commissioned to carry out breakdown and heating experiments at 0.75T and 1.5T operating toroidal magnetic fields. The 42GHz ECRH system consists of high power microwave source Gyrotron capable to deliver 500kW microwave power for 500ms duration, approximately 20 meter long transmission line and a mirror based launcher. The ECRH power in fundamental O-mode & second harmonic X-mode is launched from low field side (radial port) of the tokamak. At 0.75T operation, approximately 300 kW ECH power is launched in second harmonic X-mode and successful ECRH assisted breakdown is achieved at low loop_voltage ~ 3V. The ECRH power is launched around 45ms prior to loop voltage. The hydrogen pressure in tokamak is maintained ~ 1×10-5mbar and the pre-ionized density is ~ 4×1012/cc. At 1.5T operating toroidal magnetic field, the ECH power is launched in fundamental O-mode. The ECH power at fundamental harmonic is varied from 100 kW to 250 kW and successful breakdown is achieved in all ECRH shots. In fundamental harmonic there is no delay in breakdown while at second harmonic ~ 40ms delay is observed, which is normal in case of second harmonic ECRH assisted breakdown.

Sol-gel derived polymer composites for energy storage and conversion

NASA Astrophysics Data System (ADS)

Han, Kuo

Sol-gel process is a simple chemistry to convert the small precursor molecules into an inorganic polymer, which could be applied to synthesize inorganic materials, modify the interface of materials, bridge the organic and inorganic materials, etc. In this dissertation, novel sol-gel derived composites have been developed for high dielectric breakdown capacitors, low high frequency loss capacitors and flexible piezoelectrics. Numerous efforts have been made in the past decades to improve the energy storage capability of composite materials by incorporating nanometer scale ceramic addictives with high dielectric permittivity into dielectric polymers with high breakdown strength. However, most composites suffer from the low breakdown strength and make the potential gain in energy density small. Here, a new chemical strategy is proposed that, through sol-gel reactions between ceramic precursors and functional groups at the end of the functionalized Poly(vinylidene fluoride -co-chlorotrifluoroethylene) chains, amorphous low permittivity ceramics was in-situ generated in the polymer matrix and cross-linked the polymer chains simultaneously. By carefully tuning precursors, the polymer/precursors feeding ratios, a series of nanocomposites were systematically designed. All the samples are comprehensively characterized and the structure-property correlations are well investigated. The optimal samples exhibit higher breakdown strength than the pristine polymer. The enhanced breakdown strength ascribed to low contrast in permittivity, great dispersion and improved electrical and mechanical properties. This newly developed approach has shown great promise for new composite capacitors. The percolative polymer composites have recently exhibited great potential in energy storage due to their high dielectric permittivities at the neighborhood of the percolation threshold. Yet high energy dissipation and poor voltage endurance of the percolative composites resulted from electrical conduction are still open issues to be addressed before full potential can be realized. Herein we report the percolative composites based on ferroelectric poly(vinylidene fluoride-co-chlorotrifluoroethylene) as the matrix and sol-gel derived SiO2 coated reduced graphene oxide nanosheets as the filler. By capitalizing on the SiO2 surface layers which have high electrical resistivity and breakdown strength, the composites exhibit superior dielectric performance as compared to the respective composites containing bare reduced graphene oxide nanosheet fillers. In addition to greatly reduced dielectric loss, little change in dielectric loss has been observed within medium frequency range (ie. 300 KHz-3 MHz) in the prepared composites even with a filler concentration beyond the percolation threshold, indicating significantly suppressed energy dissipation and the feasibility of using the conductor-insulator composites beyond the percolation threshold. Moreover, remarkable breakdown strength of 80 MV/m at the percolation threshold has been achieved in the composite, which far exceeds those of conventional percolative composites (lower than 0.1 MV/m in most cases) and thus enables the applications of the percolative composites at high electric fields. This work offers a new avenue to the percolative polymer composites exhibiting high permittivity, reduced loss and excellent breakdown strength for electrical energy storage applications. Flexible piezoelectric materials have attracted extensive attention because they can provide a practical way to scavenge energy from the environment and motions. It also provides the possibility to fabricate wearable and self-powered energy generator for powering small electronic devices. In the dissertation a new composite including BTO 3D structure and PDMS has been successfully fabricated using the sol-gel process. The structure, flexibility, dielectric and piezoelectric properties have been well studied. The new material shows a high g33 value of more than 400 mV m/N. Moreover, the durability of this composite has been confirmed by cycle tests even though the BTO structure falls apart into small pieces in the PDMS matrix. The unique morphology of the composite allows the broken piece to connect with each other to generate power under stress. This work also opens a new route toward flexible piezoelectric composites.

Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors

NASA Astrophysics Data System (ADS)

Hsu, M. K.; Chiu, S. Y.; Wu, C. H.; Guo, D. F.; Lour, W. S.

2008-12-01

Pseudomorphic Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors (DH-HEMTs) fabricated with different gate-formation structures of a single-recess gate (SRG), a double-recess gate (DRG) and a field-plate gate (FPG) were comparatively investigated. FPG devices show the best breakdown characteristics among these devices due to great reduction in the peak electric field between the drain and gate electrodes. The measured gate-drain breakdown voltages defined at a 1 mA mm-1 reverse gate-drain current density were -15.3, -19.1 and -26.0 V for SRG, DRG and FPG devices, respectively. No significant differences in their room-temperature common-source current-voltage characteristics were observed. However, FPG devices exhibit threshold voltages being the least sensitive to temperature. Threshold voltages as a function of temperature indicate a threshold-voltage variation as low as -0.97 mV K-1 for FPG devices. According to the 2.4 GHz load-pull power measurement at VDS = 3.0 V and VGS = -0.5 V, the saturated output power (POUT), power gain (GP) and maximum power-added efficiency (PAE) were 10.3 dBm/13.2 dB/36.6%, 11.2 dBm/13.1 dB/39.7% and 13.06 dBm/12.8 dB/47.3%, respectively, for SRG, DRG and FPG devices with a pi-gate in class AB operation. When the FPG device is biased at a VDS of 10 V, the saturated power density is more than 600 mW mm-1.