Evaluating Approaches to Rendering Braille Text on a High-Density Pin Display.
Morash, Valerie S; Russomanno, Alexander; Gillespie, R Brent; OModhrain, Sile
2017-10-13
Refreshable displays for tactile graphics are typically composed of pins that have smaller diameters and spacing than standard braille dots. We investigated configurations of high-density pins to form braille text on such displays using non-refreshable stimuli produced with a 3D printer. Normal dot braille (diameter 1.5 mm) was compared to high-density dot braille (diameter 0.75 mm) wherein each normal dot was rendered by high-density simulated pins alone or in a cluster of pins configured in a diamond, X, or square; and to "blobs" that could result from covering normal braille and high-density multi-pin configurations with a thin membrane. Twelve blind participants read MNREAD sentences displayed in these conditions. For high-density simulated pins, single pins were as quickly and easily read as normal braille, but diamond, X, and square multi-pin configurations were slower and/or harder to read than normal braille. We therefore conclude that as long as center-to-center dot spacing and dot placement is maintained, the dot diameter may be open to variability for rendering braille on a high density tactile display.
Mid-Infrared Quantum-Dot Quantum Cascade Laser: A Theoretical Feasibility Study
Michael, Stephan; Chow, Weng; Schneider, Hans
2016-05-01
In the framework of a microscopic model for intersubband gain from electrically pumped quantum-dot structures we investigate electrically pumped quantum-dots as active material for a mid-infrared quantum cascade laser. Our previous calculations have indicated that these structures could operate with reduced threshold current densities while also achieving a modal gain comparable to that of quantum well active materials. We study the influence of two important quantum-dot material parameters, here, namely inhomogeneous broadening and quantum-dot sheet density, on the performance of a proposed quantum cascade laser design. In terms of achieving a positive modal net gain, a high quantum-dot density canmore » compensate for moderately high inhomogeneous broadening, but at a cost of increased threshold current density. By minimizing quantum-dot density with presently achievable inhomogeneous broadening and total losses, significantly lower threshold densities than those reported in quantum-well quantum-cascade lasers are predicted by our theory.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Michael, Stephan; Chow, Weng; Schneider, Hans
In the framework of a microscopic model for intersubband gain from electrically pumped quantum-dot structures we investigate electrically pumped quantum-dots as active material for a mid-infrared quantum cascade laser. Our previous calculations have indicated that these structures could operate with reduced threshold current densities while also achieving a modal gain comparable to that of quantum well active materials. We study the influence of two important quantum-dot material parameters, here, namely inhomogeneous broadening and quantum-dot sheet density, on the performance of a proposed quantum cascade laser design. In terms of achieving a positive modal net gain, a high quantum-dot density canmore » compensate for moderately high inhomogeneous broadening, but at a cost of increased threshold current density. By minimizing quantum-dot density with presently achievable inhomogeneous broadening and total losses, significantly lower threshold densities than those reported in quantum-well quantum-cascade lasers are predicted by our theory.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Qayyum, Hamza; Chen, Szu-yuan, E-mail: sychen@ltl.iams.sinica.edu.tw; Department of Physics, National Central University, Zhongli, Taoyuan 320, Taiwan
2016-05-15
The capability to fabricate Ge/Si quantum dots with small dot size and high dot density uniformly over a large area is crucial for many applications. In this work, we demonstrate that this can be achieved by scanning a pre-deposited Ge thin layer on Si substrate with a line-focused pulsed laser beam to induce formation of quantum dots. With suitable setting, Ge/Si quantum dots with a mean height of 2.9 nm, a mean diameter of 25 nm, and a dot density of 6×10{sup 10} cm{sup −2} could be formed over an area larger than 4 mm{sup 2}. The average size ofmore » the laser-induced quantum dots is smaller while their density is higher than that of quantum dots grown by using Stranski-Krastanov growth mode. Based on the dependence of the characteristics of quantum dots on the laser parameters, a model consisting of laser-induced strain, surface diffusion, and Ostwald ripening is proposed for the mechanism underlying the formation of the Ge/Si quantum dots. The technique demonstrated could be applicable to other materials besides Ge/Si.« less
1310 nm quantum dot DFB lasers with high dot density and ultra-low linewidth-power product
NASA Technical Reports Server (NTRS)
Qiu, Y.; Lester, L. F.; Gray, A. L.; Newell, T. C.; Hains, C.; Gogna, P.; Muller, R.; Maker, P.; Su, H.; Stintz, A.
2002-01-01
Laterally coupled distributed feedback lasers using high-density InAs quantum dots-in-a-well (DWELL) active region demonstrate a nominal wavelength of 1310 nm, a linewidth as small as 68 kHz, and a linewidth-power product of 100 kHz-mW.
High volumetric supercapacitor with a long life span based on polymer dots and graphene sheets
NASA Astrophysics Data System (ADS)
Wei, Ji-Shi; Chen, Jie; Ding, Hui; Zhang, Peng; Wang, Yong-Gang; Xiong, Huan-Ming
2017-10-01
A series of polymer dots/graphene sheets composites with high densities are prepared and tested for supercapacitors. Polymer dots (PDs) are synthesized by one-step method at room temperature. They can effectively increase surface areas of the composites (almost 10 times), and the functional groups from PDs produce high pseudocapacitance, so that the samples exhibit high specific capacitances (e. g., 364.2 F cm-3 at 1 A g-1) and high cycling stability (e. g., more than 95% of the initial capacity retention over 10 000 cycles at different current densities). The optimal sample is employed to fabricate a symmetric supercapacitor, which exhibits an energy density up to 8 Wh L-1 and a power density up to 11 800 W L-1, respectively.
Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
NASA Astrophysics Data System (ADS)
Su, Xiang-Bin; Ding, Ying; Ma, Ben; Zhang, Ke-Lu; Chen, Ze-Sheng; Li, Jing-Lun; Cui, Xiao-Ran; Xu, Ying-Qiang; Ni, Hai-Qiao; Niu, Zhi-Chuan
2018-02-01
The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of growing high-density InAs/GaAs quantum dots, bimodal size occurs due to large mismatch and other factors. The bimodal size in the InAs/GaAs quantum dot system is eliminated by the method of high-temperature annealing and optimized the in situ annealing temperature. The annealing temperature is taken as the key optimization parameters, and the optimal annealing temperature of 680 °C was obtained. In this process, quantum dot growth temperature, InAs deposition, and arsenic (As) pressure are optimized to improve quantum dot quality and emission wavelength. A 1.3-μm high-performance F-P quantum dot laser with a threshold current density of 110 A/cm2 was demonstrated.
Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers.
Su, Xiang-Bin; Ding, Ying; Ma, Ben; Zhang, Ke-Lu; Chen, Ze-Sheng; Li, Jing-Lun; Cui, Xiao-Ran; Xu, Ying-Qiang; Ni, Hai-Qiao; Niu, Zhi-Chuan
2018-02-21
The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of growing high-density InAs/GaAs quantum dots, bimodal size occurs due to large mismatch and other factors. The bimodal size in the InAs/GaAs quantum dot system is eliminated by the method of high-temperature annealing and optimized the in situ annealing temperature. The annealing temperature is taken as the key optimization parameters, and the optimal annealing temperature of 680 °C was obtained. In this process, quantum dot growth temperature, InAs deposition, and arsenic (As) pressure are optimized to improve quantum dot quality and emission wavelength. A 1.3-μm high-performance F-P quantum dot laser with a threshold current density of 110 A/cm 2 was demonstrated.
Carey, Graham H; Levina, Larissa; Comin, Riccardo; Voznyy, Oleksandr; Sargent, Edward H
2015-06-03
Through a combination of chemical and mutual dot-to-dot surface passivation, high-quality colloidal quantum dot solids are fabricated. The joint passivation techniques lead to a record diffusion length for colloidal quantum dots of 230 ± 20 nm. The technique is applied to create thick photovoltaic devices that exhibit high current density without losing fill factor. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Forcing of the Coupled Ionosphere-Thermosphere (IT) System During Magnetic Storms
NASA Technical Reports Server (NTRS)
Huang, Cheryl; Huang, Yanshi; Su, Yi-Jiun; Sutton, Eric; Hairston, Marc; Coley, W. Robin; Doornbos, Eelco; Zhang, Yongliang
2014-01-01
Poynting flux shows peaks around auroral zone AND inside polar cap. Energy enters IT system at all local times in polar cap. Track-integrated flux at DMSP often peaks at polar latitudes- probably due to increased area of polar cap during storm main phases. center dot lon temperatures at DMSP show large increases in polar region at all local times; cusp and auroral zones do not show distinctively high Ti. center dot I on temperatures in the polar cap are higher than in the auroral zones during quiet times. center dot Neutral densities at GRACE and GOCE show maxima at polar latitudes without clear auroral signatures. Response is fast, minutes from onset to density peaks. center dot GUVI observations of O/N2 ratio during storms show similar response as direct measurements of ion and neutral densities, i.e. high temperatures in polar cap during prestorm quiet period, heating proceeding from polar cap to lower latitudes during storm main phase. center dot Discrepancy between maps of Poynting flux and of ion temperatures/neutral densities suggests that connection between Poynting flux and Joule heating is not simple.
Quantum dot-polymer conjugates for stable luminescent displays.
Ghimire, Sushant; Sivadas, Anjaly; Yuyama, Ken-Ichi; Takano, Yuta; Francis, Raju; Biju, Vasudevanpillai
2018-05-23
The broad absorption of light in the UV-Vis-NIR region and the size-based tunable photoluminescence color of semiconductor quantum dots make these tiny crystals one of the most attractive antennae in solar cells and phosphors in electrooptical devices. One of the primary requirements for such real-world applications of quantum dots is their stable and uniform distribution in optically transparent matrices. In this work, we prepare transparent thin films of polymer-quantum dot conjugates, where CdSe/ZnS quantum dots are uniformly distributed at high densities in a chitosan-polystyrene copolymer (CS-g-PS) matrix. Here, quantum dots in an aqueous solution are conjugated to the copolymer by a phase transfer reaction. With the stable conjugation of quantum dots to the copolymer, we prevent undesired phase separation between the two and aggregation of quantum dots. Furthermore, the conjugate allows us to prepare transparent thin films in which quantum dots are uniformly distributed at high densities. The CS-g-PS copolymer helps us in not only preserving the photoluminescence properties of quantum dots in the film but also rendering excellent photostability to quantum dots at the ensemble and single particle levels, making the conjugate a promising material for photoluminescence-based devices.
Density of Trap States and Auger-mediated Electron Trapping in CdTe Quantum-Dot Solids.
Boehme, Simon C; Azpiroz, Jon Mikel; Aulin, Yaroslav V; Grozema, Ferdinand C; Vanmaekelbergh, Daniël; Siebbeles, Laurens D A; Infante, Ivan; Houtepen, Arjan J
2015-05-13
Charge trapping is an ubiquitous process in colloidal quantum-dot solids and a major limitation to the efficiency of quantum dot based devices such as solar cells, LEDs, and thermoelectrics. Although empirical approaches led to a reduction of trapping and thereby efficiency enhancements, the exact chemical nature of the trapping mechanism remains largely unidentified. In this study, we determine the density of trap states in CdTe quantum-dot solids both experimentally, using a combination of electrochemical control of the Fermi level with ultrafast transient absorption and time-resolved photoluminescence spectroscopy, and theoretically, via density functional theory calculations. We find a high density of very efficient electron traps centered ∼0.42 eV above the valence band. Electrochemical filling of these traps increases the electron lifetime and the photoluminescence quantum yield by more than an order of magnitude. The trapping rate constant for holes is an order of magnitude lower that for electrons. These observations can be explained by Auger-mediated electron trapping. From density functional theory calculations we infer that the traps are formed by dicoordinated Te atoms at the quantum dot surface. The combination of our unique experimental determination of the density of trap states with the theoretical modeling of the quantum dot surface allows us to identify the trapping mechanism and chemical reaction at play during charge trapping in these quantum dots.
NASA Astrophysics Data System (ADS)
Wu, Zong-Kwei J.
2006-12-01
Photodetectors based on intraband infrared absorption in the quantum dots have demonstrated improved performance over its quantum well counterpart by lower dark current, relative temperature insensitivity, and its ability for normal incidence operation. Various scattering processes, including phonon emission/absorption and carrier-carrier scattering, are critical in understanding device operation on the fundamental level. In previous studies, our group has investigated carrier dynamics in both low- and high-density regime. Ultrafast electron-hole scattering and the predicted phonon bottleneck effect in intrinsic quantum dots have been observed. Further examination on electron dynamics in unipolar structures is presented in this thesis. We used n-doped quantum dot in mid-infrared photodetector device structure to study the electron dynamics in unipolar structure. Differential transmission spectroscopy with mid-infrared intraband pump and optical interband probe was implemented to measure the electron dynamics directly without creating extra electron-hole pair, Electron relaxation after excitation was measured under various density and temperature conditions. Rapid capture into quantum dot within ˜ 10 ps was observed due to Auger-type electron-electron scattering. Intradot relaxation from the quantum dot excited state to the ground state was also observed on the time scale of 100 ps. With highly doped electron density in the structure, the inter-sublevel relaxation is dominated by Auger-type electron-electron scattering and the phonon bottleneck effect is circumvented. Nanosecond-scale recovery in larger-sized quantum dots was observed, not intrinsic to electron dynamics but due to band-bending and built-in voltage drift. An ensemble Monte Carlo simulation was also established to model the dynamics in quantum dots and in goad agreement with the experimental results. We presented a comprehensive picture of electron dynamics in the unipolar quantum dot structure. Although the phonon bottleneck is circumvented with high doped electron density, relaxation processes in unipolar quantum dots have been measured with time scales longer than that of bipolar systems. The results explain the operation principles of the quantum dot infrared photodetector on a microscopic level and provide basic understanding for future applications and designs.
Low-density InP-based quantum dots emitting around the 1.5 μm telecom wavelength range
DOE Office of Scientific and Technical Information (OSTI.GOV)
Yacob, M.; Reithmaier, J. P.; Benyoucef, M., E-mail: m.benyoucef@physik.uni-kassel.de
The authors report on low-density InAs quantum dots (QDs) grown on AlGaInAs surfaces lattice matched to InP using post-growth annealing by solid-source molecular beam epitaxy. Clearly spatially separated QDs with a dot density of about 5 × 10{sup 8} cm{sup −2} are obtained by using a special capping technique after the dot formation process. High-resolution micro-photoluminescence performed on optimized QD structures grown on distributed Bragg reflector exhibits single QD emissions around 1.5 μm with narrow excitonic linewidth below 50 μeV, which can be used as single photon source in the telecom wavelength range.
Cui, J; Lv, Y; Yang, X J; Fan, Y L; Zhong, Z; Jiang, Z M
2011-03-25
The size uniformity of self-assembled SiGe quantum rings, which are formed by capping SiGe quantum dots with a thin Si layer, is found to be greatly influenced by the growth temperature and the areal density of SiGe quantum dots. Higher growth temperature benefits the size uniformity of quantum dots, but results in low Ge concentration as well as asymmetric Ge distribution in the dots, which induces the subsequently formed quantum rings to be asymmetric in shape or even broken somewhere in the ridge of rings. Low growth temperature degrades the size uniformity of quantum dots, and thus that of quantum rings. A high areal density results in the expansion and coalescence of neighboring quantum dots to form a chain, rather than quantum rings. Uniform quantum rings with a size dispersion of 4.6% and an areal density of 7.8×10(8) cm(-2) are obtained at the optimized growth temperature of 640°C.
NASA Astrophysics Data System (ADS)
Sasaki, Takeshi; Muraguchi, Masakazu; Seo, Moon-Sik; Park, Sung-kye; Endoh, Tetsuo
2014-01-01
The merits, concerns and design principle for the future nano dot (ND) type NAND flash memory cell are clarified, by considering the effect of storage layer structure on NAND flash memory characteristics. The characteristics of the ND cell for a NAND flash memory in comparison with the floating gate type (FG) is comprehensively studied through the read, erase, program operation, and the cell to cell interference with device simulation. Although the degradation of the read throughput (0.7% reduction of the cell current) and slower program time (26% smaller programmed threshold voltage shift) with high density (10 × 1012 cm-2) ND NAND are still concerned, the suppress of the cell to cell interference with high density (10 × 1012 cm-2) plays the most important part for scaling and multi-level cell (MLC) operation in comparison with the FG NAND. From these results, the design knowledge is shown to require the control of the number of nano dots rather than the higher nano dot density, from the viewpoint of increasing its memory capacity by MLC operation and suppressing threshold voltage variability caused by the number of dots in the storage layer. Moreover, in order to increase its memory capacity, it is shown the tunnel oxide thickness with ND should be designed thicker (>3 nm) than conventional designed ND cell for programming/erasing with direct tunneling mechanism.
2012-01-01
We have shown that it is possible to tune, up to complete suppression, the photoluminescence superlinear dependence on the excitation density in quantum dot samples at high temperatures by annealing treatments. The effect has been attributed to the reduction of the defectivity of the material induced by annealing. PMID:23033918
Quantum Monte Carlo Studies of Interaction-Induced Localization in Quantum Dots and Wires
NASA Astrophysics Data System (ADS)
Devrim Güçlü, A.
2009-03-01
We investigate interaction-induced localization of electrons in both quantum dots and inhomogeneous quantum wires using variational and diffusion quantum Monte Carlo methods. Quantum dots and wires are highly tunable systems that enable the study of the physics of strongly correlated electrons. With decreasing electronic density, interactions become stronger and electrons are expected to localize at their classical positions, as in Wigner crystallization in an infinite 2D system. (1) Dots: We show that the addition energy shows a clear progression from features associated with shell structure to those caused by commensurability of a Wigner crystal. This cross-over is, then, a signature of localization; it occurs near rs˜20. For higher values of rs, the configuration symmetry of the quantum dot becomes fully consistent with the classical ground state. (2) Wires: We study an inhomogeneous quasi-one-dimensional system -- a wire with two regions, one at low density and the other high. We find that strong localization occurs in the low density quantum point contact region as the gate potential is increased. The nature of the transition from high to low density depends on the density gradient -- if it is steep, a barrier develops between the two regions, causing Coulomb blockade effects. We find no evidence for ferromagnetic spin polarization for the range of parameters studied. The picture emerging here is in good agreement with the experimental measurements of tunneling between two wires. Collaborators: C. J. Umrigar (Cornell), Hong Jiang (Fritz Haber Institut), Amit Ghosal (IISER Calcutta), and H. U. Baranger (Duke).
Unity quantum yield of photogenerated charges and band-like transport in quantum-dot solids.
Talgorn, Elise; Gao, Yunan; Aerts, Michiel; Kunneman, Lucas T; Schins, Juleon M; Savenije, T J; van Huis, Marijn A; van der Zant, Herre S J; Houtepen, Arjan J; Siebbeles, Laurens D A
2011-09-25
Solid films of colloidal quantum dots show promise in the manufacture of photodetectors and solar cells. These devices require high yields of photogenerated charges and high carrier mobilities, which are difficult to achieve in quantum-dot films owing to a strong electron-hole interaction and quantum confinement. Here, we show that the quantum yield of photogenerated charges in strongly coupled PbSe quantum-dot films is unity over a large temperature range. At high photoexcitation density, a transition takes place from hopping between localized states to band-like transport. These strongly coupled quantum-dot films have electrical properties that approach those of crystalline bulk semiconductors, while retaining the size tunability and cheap processing properties of colloidal quantum dots.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Barettin, Daniele, E-mail: Daniele.Barettin@uniroma2.it; Auf der Maur, Matthias; De Angelis, Roberta
2015-03-07
We report on numerical simulations of InP surface lateral quantum-dot molecules on In{sub 0.48}Ga{sub 0.52 }P buffer, using a model strictly derived by experimental results by extrapolation of the molecules shape from atomic force microscopy images. Our study has been inspired by the comparison of a photoluminescence spectrum of a high-density InP surface quantum dot sample with a numerical ensemble average given by a weighted sum of simulated single quantum-dot spectra. A lack of experimental optical response from the smaller dots of the sample is found to be due to strong inter-dot strain fields, which influence the optoelectronic properties of lateralmore » quantum-dot molecules. Continuum electromechanical, k{sup →}·p{sup →} bandstructure, and optical calculations are presented for two different molecules, the first composed of two dots of nearly identical dimensions (homonuclear), the second of two dots with rather different sizes (heteronuclear). We show that in the homonuclear molecule the hydrostatic strain raises a potential barrier for the electrons in the connection zone between the dots, while conversely the holes do not experience any barrier, which considerably increases the coupling. Results for the heteronuclear molecule show instead that its dots do not appear as two separate and distinguishable structures, but as a single large dot, and no optical emission is observed in the range of higher energies where the smaller dot is supposed to emit. We believe that in samples of such a high density the smaller dots result as practically incorporated into bigger molecular structures, an effect strongly enforced by the inter-dot strain fields, and consequently it is not possible to experimentally obtain a separate optical emission from the smaller dots.« less
NASA Astrophysics Data System (ADS)
Barettin, Daniele; Auf der Maur, Matthias; De Angelis, Roberta; Prosposito, Paolo; Casalboni, Mauro; Pecchia, Alessandro
2015-03-01
We report on numerical simulations of InP surface lateral quantum-dot molecules on In0.48Ga0.52P buffer, using a model strictly derived by experimental results by extrapolation of the molecules shape from atomic force microscopy images. Our study has been inspired by the comparison of a photoluminescence spectrum of a high-density InP surface quantum dot sample with a numerical ensemble average given by a weighted sum of simulated single quantum-dot spectra. A lack of experimental optical response from the smaller dots of the sample is found to be due to strong inter-dot strain fields, which influence the optoelectronic properties of lateral quantum-dot molecules. Continuum electromechanical, k →.p → bandstructure, and optical calculations are presented for two different molecules, the first composed of two dots of nearly identical dimensions (homonuclear), the second of two dots with rather different sizes (heteronuclear). We show that in the homonuclear molecule the hydrostatic strain raises a potential barrier for the electrons in the connection zone between the dots, while conversely the holes do not experience any barrier, which considerably increases the coupling. Results for the heteronuclear molecule show instead that its dots do not appear as two separate and distinguishable structures, but as a single large dot, and no optical emission is observed in the range of higher energies where the smaller dot is supposed to emit. We believe that in samples of such a high density the smaller dots result as practically incorporated into bigger molecular structures, an effect strongly enforced by the inter-dot strain fields, and consequently it is not possible to experimentally obtain a separate optical emission from the smaller dots.
NASA Astrophysics Data System (ADS)
Sharma, Nandlal; Reuter, Dirk
2017-11-01
Two vertically stacked quantum dots that are electronically coupled, so called quantum dot molecules, are of great interest for the realization of solid state building blocks for quantum communication networks. We present a modified gradient approach to realize InAs quantum dot molecules with a low areal density so that single quantum dot molecules can be optically addressed. The individual quantum dot layers were prepared by solid source molecular beam epitaxy depositing InAs on GaAs(100). The bottom quantum dot layer has been grown without substrate rotation resulting in an In-gradient across the surface, which translated into a density gradient with low quantum dot density in a certain region of the wafer. For the top quantum dot layer, separated from the bottom quantum dot layer by a 6 nm thick GaAs barrier, various InAs amounts were deposited without an In-gradient. In spite of the absence of an In-gradient, a pronounced density gradient is observed for the top quantum dots. Even for an In-amount slightly below the critical thickness for a single dot layer, a density gradient in the top quantum dot layer, which seems to reproduce the density gradient in the bottom layer, is observed. For more or less In, respectively, deviations from this behavior occur. We suggest that the obvious influence of the bottom quantum dot layer on the growth of the top quantum dots is due to the strain field induced by the buried dots.
Rodrigues, Nils; Weiskopf, Daniel
2018-01-01
Conventional dot plots use a constant dot size and are typically applied to show the frequency distribution of small data sets. Unfortunately, they are not designed for a high dynamic range of frequencies. We address this problem by introducing nonlinear dot plots. Adopting the idea of nonlinear scaling from logarithmic bar charts, our plots allow for dots of varying size so that columns with a large number of samples are reduced in height. For the construction of these diagrams, we introduce an efficient two-way sweep algorithm that leads to a dense and symmetrical layout. We compensate aliasing artifacts at high dot densities by a specifically designed low-pass filtering method. Examples of nonlinear dot plots are compared to conventional dot plots as well as linear and logarithmic histograms. Finally, we include feedback from an expert review.
Increased InAs quantum dot size and density using bismuth as a surfactant
NASA Astrophysics Data System (ADS)
Dasika, Vaishno D.; Krivoy, E. M.; Nair, H. P.; Maddox, S. J.; Park, K. W.; Jung, D.; Lee, M. L.; Yu, E. T.; Bank, S. R.
2014-12-01
We have investigated the growth of self-assembled InAs quantum dots using bismuth as a surfactant to control the dot size and density. We find that the bismuth surfactant increases the quantum dot density, size, and uniformity, enabling the extension of the emission wavelength with increasing InAs deposition without a concomitant reduction in dot density. We show that these effects are due to bismuth acting as a reactive surfactant to kinetically suppress the surface adatom mobility. This mechanism for controlling quantum dot density and size has the potential to extend the operating wavelength and enhance the performance of various optoelectronic devices.
Why do adults with dyslexia have poor global motion sensitivity?
Conlon, Elizabeth G; Lilleskaret, Gry; Wright, Craig M; Stuksrud, Anne
2013-01-01
Two experiments aimed to determine why adults with dyslexia have higher global motion thresholds than typically reading controls. In Experiment 1, the dot density and number of animation frames presented in the dot stimulus were manipulated because of findings that use of a high dot density can normalize coherence thresholds in individuals with dyslexia. Dot densities were 14.15 and 3.54 dots/deg(2). These were presented for five (84 ms) or eight (134 ms) frames. The dyslexia group had higher coherence thresholds in all conditions than controls. However, in the high dot density, long duration condition, both reader groups had the lowest thresholds indicating normal temporal recruitment. These results indicated that the dyslexia group could sample the additional signals dots over space and then integrate these with the same efficiency as controls. In Experiment 2, we determined whether briefly presenting a fully coherent prime moving in either the same or opposite direction of motion to a partially coherent test stimulus would systematically increase and decrease global motion thresholds in the reader groups. When the direction of motion in the prime and test was the same, global motion thresholds increased for both reader groups. The increase in coherence thresholds was significantly greater for the dyslexia group. When the motion of the prime and test were presented in opposite directions, coherence thresholds were reduced in both groups. No group threshold differences were found. We concluded that the global motion processing deficit found in adults with dyslexia can be explained by undersampling of the target motion signals. This might occur because of difficulties directing attention to the relevant motion signals in the random dot pattern, and not a specific difficulty integrating global motion signals. These effects are most likely to occur in the group with dyslexia when more complex computational processes are required to process global motion.
Why do adults with dyslexia have poor global motion sensitivity?
Conlon, Elizabeth G.; Lilleskaret, Gry; Wright, Craig M.; Stuksrud, Anne
2013-01-01
Two experiments aimed to determine why adults with dyslexia have higher global motion thresholds than typically reading controls. In Experiment 1, the dot density and number of animation frames presented in the dot stimulus were manipulated because of findings that use of a high dot density can normalize coherence thresholds in individuals with dyslexia. Dot densities were 14.15 and 3.54 dots/deg2. These were presented for five (84 ms) or eight (134 ms) frames. The dyslexia group had higher coherence thresholds in all conditions than controls. However, in the high dot density, long duration condition, both reader groups had the lowest thresholds indicating normal temporal recruitment. These results indicated that the dyslexia group could sample the additional signals dots over space and then integrate these with the same efficiency as controls. In Experiment 2, we determined whether briefly presenting a fully coherent prime moving in either the same or opposite direction of motion to a partially coherent test stimulus would systematically increase and decrease global motion thresholds in the reader groups. When the direction of motion in the prime and test was the same, global motion thresholds increased for both reader groups. The increase in coherence thresholds was significantly greater for the dyslexia group. When the motion of the prime and test were presented in opposite directions, coherence thresholds were reduced in both groups. No group threshold differences were found. We concluded that the global motion processing deficit found in adults with dyslexia can be explained by undersampling of the target motion signals. This might occur because of difficulties directing attention to the relevant motion signals in the random dot pattern, and not a specific difficulty integrating global motion signals. These effects are most likely to occur in the group with dyslexia when more complex computational processes are required to process global motion. PMID:24376414
Chemically Triggered Formation of Two-Dimensional Epitaxial Quantum Dot Superlattices.
Walravens, Willem; De Roo, Jonathan; Drijvers, Emile; Ten Brinck, Stephanie; Solano, Eduardo; Dendooven, Jolien; Detavernier, Christophe; Infante, Ivan; Hens, Zeger
2016-07-26
Two dimensional superlattices of epitaxially connected quantum dots enable size-quantization effects to be combined with high charge carrier mobilities, an essential prerequisite for highly performing QD devices based on charge transport. Here, we demonstrate that surface active additives known to restore nanocrystal stoichiometry can trigger the formation of epitaxial superlattices of PbSe and PbS quantum dots. More specifically, we show that both chalcogen-adding (sodium sulfide) and lead oleate displacing (amines) additives induce small area epitaxial superlattices of PbSe quantum dots. In the latter case, the amine basicity is a sensitive handle to tune the superlattice symmetry, with strong and weak bases yielding pseudohexagonal or quasi-square lattices, respectively. Through density functional theory calculations and in situ titrations monitored by nuclear magnetic resonance spectroscopy, we link this observation to the concomitantly different coordination enthalpy and ligand displacement potency of the amine. Next to that, an initial ∼10% reduction of the initial ligand density prior to monolayer formation and addition of a mild, lead oleate displacing chemical trigger such as aniline proved key to induce square superlattices with long-range, square micrometer order; an effect that is the more pronounced the larger the quantum dots. Because the approach applies to PbS quantum dots as well, we conclude that it offers a reproducible and rational method for the formation of highly ordered epitaxial quantum dot superlattices.
Sahu, Bibhuti Bhusan; Yin, Yongyi; Han, Jeon Geon; Shiratani, Masaharu
2016-06-21
The advanced materials process by non-thermal plasmas with a high plasma density allows the synthesis of small-to-big sized Si quantum dots by combining low-temperature deposition with superior crystalline quality in the background of an amorphous hydrogenated silicon nitride matrix. Here, we make quantum dot thin films in a reactive mixture of ammonia/silane/hydrogen utilizing dual-frequency capacitively coupled plasmas with high atomic hydrogen and nitrogen radical densities. Systematic data analysis using different film and plasma characterization tools reveals that the quantum dots with different sizes exhibit size dependent film properties, which are sensitively dependent on plasma characteristics. These films exhibit intense photoluminescence in the visible range with violet to orange colors and with narrow to broad widths (∼0.3-0.9 eV). The observed luminescence behavior can come from the quantum confinement effect, quasi-direct band-to-band recombination, and variation of atomic hydrogen and nitrogen radicals in the film growth network. The high luminescence yields in the visible range of the spectrum and size-tunable low-temperature synthesis with plasma and radical control make these quantum dot films good candidates for light emitting applications.
Modeling photovoltaic performance in periodic patterned colloidal quantum dot solar cells.
Fu, Yulan; Dinku, Abay G; Hara, Yukihiro; Miller, Christopher W; Vrouwenvelder, Kristina T; Lopez, Rene
2015-07-27
Colloidal quantum dot (CQD) solar cells have attracted tremendous attention mostly due to their wide absorption spectrum window and potentially low processability cost. The ultimate efficiency of CQD solar cells is highly limited by their high trap state density. Here we show that the overall device power conversion efficiency could be improved by employing photonic structures that enhance both charge generation and collection efficiencies. By employing a two-dimensional numerical model, we have calculated the characteristics of patterned CQD solar cells based of a simple grating structure. Our calculation predicts a power conversion efficiency as high as 11.2%, with a short circuit current density of 35.2 mA/cm2, a value nearly 1.5 times larger than the conventional flat design, showing the great potential value of patterned quantum dot solar cells.
Hot-electron transfer in quantum-dot heterojunction films.
Grimaldi, Gianluca; Crisp, Ryan W; Ten Brinck, Stephanie; Zapata, Felipe; van Ouwendorp, Michiko; Renaud, Nicolas; Kirkwood, Nicholas; Evers, Wiel H; Kinge, Sachin; Infante, Ivan; Siebbeles, Laurens D A; Houtepen, Arjan J
2018-06-13
Thermalization losses limit the photon-to-power conversion of solar cells at the high-energy side of the solar spectrum, as electrons quickly lose their energy relaxing to the band edge. Hot-electron transfer could reduce these losses. Here, we demonstrate fast and efficient hot-electron transfer between lead selenide and cadmium selenide quantum dots assembled in a quantum-dot heterojunction solid. In this system, the energy structure of the absorber material and of the electron extracting material can be easily tuned via a variation of quantum-dot size, allowing us to tailor the energetics of the transfer process for device applications. The efficiency of the transfer process increases with excitation energy as a result of the more favorable competition between hot-electron transfer and electron cooling. The experimental picture is supported by time-domain density functional theory calculations, showing that electron density is transferred from lead selenide to cadmium selenide quantum dots on the sub-picosecond timescale.
Novel Phenotypic and Genotypic Findings in X-Linked Retinoschisis
Tsang, Stephen H.; Vaclavik, Veronika; Bird, Alan C.; Robson, Anthony G.; Holder, Graham E.
2009-01-01
Objective To describe atypical phenotypes associated with the retinoschisis (X-linked, juvenile) 1 mutation (RS1). Methods Seven patients with multiple fine white dots at the macula and reduced visual acuity were evaluated. Six patients underwent pattern and full-field electroretinography (ERG). On-off ERG, optical coherence tomography, and fundus autofluorescence imaging were performed in some patients. Mutational screening of RS1 was prompted by the ERG findings. Results Fine white dots resembling drusenlike deposits and sometimes associated with retinal pigment epithelial abnormalities were present in the maculae. An electronegative bright-flash ERG configuration was present in all patients tested, and abnormal pattern ERG findings confirmed macular dysfunction. A parafoveal ring of high-density autofluorescence was present in 3 eyes; 1 patient showed high-density foci concordant with the white dots. Optical coherence tomography did not show foveal schisis in 3 of 4 eyes. All patients carried mutations in RS1, including 1 with a novel 206T→C mutation in exon 4. Conclusions Multiple fine white dots at the macula may be the initial fundus feature in RS1 mutation. Electrophysiologic findings suggest dysfunction after phototransduction and enable focused mutational screening. Autofluorescence imaging results suggest early retinal pigment epithelium involvement; a parafoveal ring of high-density autofluorescence has not previously been described in this disorder. PMID:17296904
NASA Astrophysics Data System (ADS)
Zhang, Zhengguo; Shi, Chengwu; Chen, Junjun; Xiao, Guannan; Li, Long
2017-07-01
Considering the balance of the hole diffusion length and the loading quantity of quantum-dots, the rutile TiO2 nanorod array with the length of 600 nm, the diameter of 20 nm, and the areal density of 500 μm-2 is successfully prepared by the hydrothermal method using the aqueous grown solution of 38 mM titanium isopropoxide and 6 M hydrochloric acid at 170 °C for 105 min. The compact PbS quantum-dot thin film on the TiO2 nanorod array is firstly obtained by the spin-coating-assisted successive ionic layer absorption and reaction with using 1,2-ethanedithiol (EDT). The result reveals that the strong interaction between lead and EDT is very important to control the crystallite size of PbS quantum-dots and obtain the compact PbS quantum-dot thin film on the TiO2 nanorod array. The all solid-state sensitized solar cell with the combination of the short-length, high-density TiO2 nanorod array and the compact PbS quantum-dot thin film achieves the photoelectric conversion efficiency of 4.10%, along with an open-circuit voltage of 0.52 V, a short-circuit photocurrent density of 13.56 mA cm-2 and a fill factor of 0.58.
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2010-02-26
...; High Density Rule at Reagan National Airport AGENCY: Federal Aviation Administration (FAA), DOT. ACTION... by February 16. Under the FAA's High Density Rule and orders limiting scheduled operations at the...
A fast atlas-guided high density diffuse optical tomography system for brain imaging
NASA Astrophysics Data System (ADS)
Dai, Xianjin; Zhang, Tao; Yang, Hao; Jiang, Huabei
2017-02-01
Near infrared spectroscopy (NIRS) is an emerging functional brain imaging tool capable of assessing cerebral concentrations of oxygenated hemoglobin (HbO) and deoxygenated hemoglobin (HbR) during brain activation noninvasively. As an extension of NIRS, diffuse optical tomography (DOT) not only shares the merits of providing continuous readings of cerebral oxygenation, but also has the ability to provide spatial resolution in the millimeter scale. Based on the scattering and absorption properties of nonionizing near-infrared light in biological tissue, DOT has been successfully applied in the imaging of breast tumors, osteoarthritis and cortex activations. Here, we present a state-of-art fast high density DOT system suitable for brain imaging. It can achieve up to a 21 Hz sampling rate for a full set of two-wavelength data for 3-D DOT brain image reconstruction. The system was validated using tissue-mimicking brain-model phantom. Then, experiments on healthy subjects were conducted to demonstrate the capability of the system.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ban, Keun-Yong; Kim, Yeongho; Kuciauskas, Darius
2016-11-10
The optical properties of InAs quantum dots (QDs) embedded in a GaAsSb matrix with different delta (d)-doping levels of 0, 2, 4, and 6 electrons per dot (e-/dot), incorporated to control the occupation of QD electronic states, are studied by photoluminescence (PL) spectroscopy. The time-resolved PL data taken at 10 K reveal that the increase of δ-doping density from 2 to 6 e -/dot decreases the recombination lifetime of carriers at ground states of the QDs from 996 ± 36 to 792 ± 19 ps, respectively. Furthermore, the carrier lifetime of the sample with 4 e -/dot is found tomore » increase at a slower rate than that of the undoped sample as temperature increases above 70 K. An Arrhenius plot of the temperature dependent PL intensity indicates that the thermal activation energy of electrons in the QDs, required for carrier escape from the dot ground state to continuum state, is increased when the d-doping density is high enough (>4 e -/dot). These results are attributed to the enhanced Coulomb interaction of electrons provided by the d-doping, leading to reduced thermal quenching of the PL.« less
Expansion of Endothelial Progenitor Cells in High Density Dot Culture of Rat Bone Marrow Cells
Wang, Ling; Kretlow, James D.; Zhou, Guangdong; Cao, Yilin; Liu, Wei; Zhang, Wen Jie
2014-01-01
In vitro expansion of endothelial progenitor cells (EPCs) remains a challenge in stem cell research and its application. We hypothesize that high density culture is able to expand EPCs from bone marrow by mimicking cell-cell interactions of the bone marrow niche. To test the hypothesis, rat bone marrow cells were either cultured in high density (2×105 cells/cm2) by seeding total 9×105 cells into six high density dots or cultured in regular density (1.6×104 cells/cm2) with the same total number of cells. Flow cytometric analyses of the cells cultured for 15 days showed that high density cells exhibited smaller cell size and higher levels of marker expression related to EPCs when compared to regular density cultured cells. Functionally, these cells exhibited strong angiogenic potentials with better tubal formation in vitro and potent rescue of mouse ischemic limbs in vivo with their integration into neo-capillary structure. Global gene chip and ELISA analyses revealed up-regulated gene expression of adhesion molecules and enhanced protein release of pro-angiogenic growth factors in high density cultured cells. In summary, high density cell culture promotes expansion of bone marrow contained EPCs that are able to enhance tissue angiogenesis via paracrine growth factors and direct differentiation into endothelial cells. PMID:25254487
NASA Astrophysics Data System (ADS)
Kamitake, Hiroki; Uenuma, Mutsunori; Okamoto, Naofumi; Horita, Masahiro; Ishikawa, Yasuaki; Yamashita, Ichro; Uraoka, Yukiharu
2015-05-01
We report a nanodot (ND) floating gate memory (NFGM) with a high-density ND array formed by a biological nano process. We utilized two kinds of cage-shaped proteins displaying SiO2 binding peptide (minTBP-1) on their outer surfaces: ferritin and Dps, which accommodate cobalt oxide NDs in their cavities. The diameters of the cobalt NDs were regulated by the cavity sizes of the proteins. Because minTBP-1 is strongly adsorbed on the SiO2 surface, high-density cobalt oxide ND arrays were obtained by a simple spin coating process. The densities of cobalt oxide ND arrays based on ferritin and Dps were 6.8 × 1011 dots cm-2 and 1.2 × 1012 dots cm-2, respectively. After selective protein elimination and embedding in a metal-oxide-semiconductor (MOS) capacitor, the charge capacities of both ND arrays were evaluated by measuring their C-V characteristics. The MOS capacitor embedded with the Dps ND array showed a wider memory window than the device embedded with the ferritin ND array. Finally, we fabricated an NFGM with a high-density ND array based on Dps, and confirmed its competent writing/erasing characteristics and long retention time.
Bernardi, A; Ossó, J O; Alonso, M I; Goñi, A R; Garriga, M
2006-05-28
We have studied the epitaxial growth of self-assembled Ge quantum dots when a submonolayer of carbon is deposited on a Ge wetting layer (WL) prior to the growth of the dots. Using atomic-force microscopy combined with optical techniques like Raman and ellipsometry, we performed a systematic study of the role played by thermally activated Si interdiffusion on dot density, composition and morphology, by changing only the growth temperature T(WL) of the WL. Strikingly, we observe that higher dot densities and a narrower size distribution are achieved by increasing the deposition temperature T(WL), i.e. by enhancing Si interdiffusion from the substrate. We suggest a two-stage growth procedure for fine tuning of dot topography (density, shape and size) useful for possible optoelectronic applications.
NASA Astrophysics Data System (ADS)
Cochran, Jeffrey M.; Busch, David R.; Ban, Han Y.; Kavuri, Venkaiah C.; Schweiger, Martin J.; Arridge, Simon R.; Yodh, Arjun G.
2017-02-01
We present high spatial density, multi-modal, parallel-plate Diffuse Optical Tomography (DOT) imaging systems for the purpose of breast tumor detection. One hybrid instrument provides time domain (TD) and continuous wave (CW) DOT at 64 source fiber positions. The TD diffuse optical spectroscopy with PMT- detection produces low-resolution images of absolute tissue scattering and absorption while the spatially dense array of CCD-coupled detector fibers (108 detectors) provides higher-resolution CW images of relative tissue optical properties. Reconstruction of the tissue optical properties, along with total hemoglobin concentration and tissue oxygen saturation, is performed using the TOAST software suite. Comparison of the spatially-dense DOT images and MR images allows for a robust validation of DOT against an accepted clinical modality. Additionally, the structural information from co-registered MR images is used as a spatial prior to improve the quality of the functional optical images and provide more accurate quantification of the optical and hemodynamic properties of tumors. We also present an optical-only imaging system that provides frequency domain (FD) DOT at 209 source positions with full CCD detection and incorporates optical fringe projection profilometry to determine the breast boundary. This profilometry serves as a spatial constraint, improving the quality of the DOT reconstructions while retaining the benefits of an optical-only device. We present initial images from both human subjects and phantoms to display the utility of high spatial density data and multi-modal information in DOT reconstruction with the two systems.
A Nanowire-Based Plasmonic Quantum Dot Laser.
Ho, Jinfa; Tatebayashi, Jun; Sergent, Sylvain; Fong, Chee Fai; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko
2016-04-13
Quantum dots enable strong carrier confinement and exhibit a delta-function like density of states, offering significant improvements to laser performance and high-temperature stability when used as a gain medium. However, quantum dot lasers have been limited to photonic cavities that are diffraction-limited and further miniaturization to meet the demands of nanophotonic-electronic integration applications is challenging based on existing designs. Here we introduce the first quantum dot-based plasmonic laser to reduce the cross-sectional area of nanowire quantum dot lasers below the cutoff limit of photonic modes while maintaining the length in the order of the lasing wavelength. Metal organic chemical vapor deposition grown GaAs-AlGaAs core-shell nanowires containing InGaAs quantum dot stacks are placed directly on a silver film, and lasing was observed from single nanowires originating from the InGaAs quantum dot emission into the low-loss higher order plasmonic mode. Lasing threshold pump fluences as low as ∼120 μJ/cm(2) was observed at 7 K, and lasing was observed up to 125 K. Temperature stability from the quantum dot gain, leading to a high characteristic temperature was demonstrated. These results indicate that high-performance, miniaturized quantum dot lasers can be realized with plasmonics.
Carbon Dots/NiCo2 O4 Nanocomposites with Various Morphologies for High Performance Supercapacitors.
Wei, Ji-Shi; Ding, Hui; Zhang, Peng; Song, Yan-Fang; Chen, Jie; Wang, Yong-Gang; Xiong, Huan-Ming
2016-11-01
A series of carbon dots/NiCo 2 O 4 composites with various morphologies are prepared and tested for supercapacitors. These samples have good electrical conductivities and efficient ions transport paths, so they exhibit high specific capacitances, superior rate performances, and high cycling stabilities. The optimal composite for hybrid supercapacitor exhibits a high energy density up to 62.0 Wh kg -1 . © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Zhang, Ran; Luo, Qiu-Ping; Chen, Hong-Yan; Yu, Xiao-Yun; Kuang, Dai-Bin; Su, Cheng-Yong
2012-04-23
A CdS/CdSe composite shell is assembled onto the surface of ZnO nanowire arrays with a simple spin-coating-based successive ionic layer adsorption and reaction method. The as-prepared photoelectrode exhibit a high photocurrent density in photoelectrochemical cells and also generates good power conversion efficiency in quantum-dot-sensitized solar cells. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Haggett, Stephanie; Krakowski, Michel; Montrosset, Ivo; Cataluna, Maria Ana
2014-09-22
A high-power tunable external cavity laser configuration with a tapered quantum-dot semiconductor optical amplifier at its core is presented, enabling a record output power for a broadly tunable semiconductor laser source in the 1.2 - 1.3 µm spectral region. Two distinct optical amplifiers are investigated, using either chirped or unchirped quantum-dot structures, and their merits are compared, considering the combination of tunability and high output power generation. At 1230 nm, the chirped quantum-dot laser achieved a maximum power of 0.62 W and demonstrated nearly 100-nm tunability. The unchirped laser enabled a tunability range of 32 nm and at 1254 nm generated a maximum power of 0.97 W, representing a 22-fold increase in output power compared with similar narrow-ridge external-cavity lasers at the same current density.
NASA Astrophysics Data System (ADS)
Lee, Damin; Xia, Qi Xun; Yun, Je Moon; Kim, Kwang Ho
2018-03-01
Binder-free mesoporous NiCo(CO3)(OH)2 nanowire arrays were grown using a facile hydrothermal technique. The Co2(CO3)(OH)2 in NiCo(CO3)(OH)2 nanowire arrays was well-decorated as nano-dot scale (a few nanometer). In addition, increasing cobalt content in nickel compound matrix, NiCo(CO3)(OH)2 nanowire arrays were separately uniformly grown without agglomeration on Ni foam, providing a high specific surface area to help electrolyte access and ion transfer. The enticing composition and morphology of the NiCo(CO3)(OH)2 nanowire exhibit a superior specific capacity of 1288.2 mAh g-1 at a current density of 3 A g-1 and excellent cycling stability with the capacity retention of 80.7% after 10,000 cycles. Furthermore, an asymmetric supercapacitor composed of the NiCo(CO3)(OH)2 composite as a positive electrode and the graphene as a negative electrode presented a high energy density of 35.5 W h kg-1 at a power density of 2555.6 W kg-1 and satisfactory cycling stability with 71.3% capacity retention after 10,000 cycles. The great combination of the active nano-dot Co2(CO3)(OH)2 and the individually grown NiCo(CO3)(OH)2 nanowires made it a promising electrode material for asymmetric supercapacitors. A well-developed nanoarchitecture of the nano-dot Co2(CO3)(OH)2 decorated NiCo(CO3)(OH)2 composite could pave the way for an excellent electrode design for high-performance supercapacitors.
Graphene-Based Ultra-Light Batteries for Aircraft
NASA Technical Reports Server (NTRS)
Calle, Carlos I.; Kaner, Richard B.
2014-01-01
Develop a graphene-based ultracapacitor prototype that is flexible, thin, lightweight, durable, low cost, and safe and that will demonstrate the feasibility for use in aircraft center dot These graphene-based devices store charge on graphene sheets and take advantage of the large accessible surface area of graphene (2,600 m2/g) to increase the electrical energy that can be stored. center dot The proposed devices should have the electrical storage capacity of thin-film-ion batteries but with much shorter charge/discharge cycle times as well as longer lives center dot The proposed devices will be carbon-based and so will not have the same issues with flammability or toxicity as the standard lithium-based storage cells There are two main established methods for the storage and delivery of electrical energy: center dot Batteries - Store energy with electrochemical reactions - High energy densities - Slow charge/discharge cycles - Used in applications requiring large amounts of energy ? aircraft center dot Electrochemical capacitors - Store energy in electrochemical double layers - Fast charge/discharge cycles - Low energy densities - Used in electronics devices - Large capacitors are used in truck engine cranking
Ferradal, Silvina L; Eggebrecht, Adam T; Hassanpour, Mahlega; Snyder, Abraham Z; Culver, Joseph P
2014-01-15
Diffuse optical imaging (DOI) is increasingly becoming a valuable neuroimaging tool when fMRI is precluded. Recent developments in high-density diffuse optical tomography (HD-DOT) overcome previous limitations of sparse DOI systems, providing improved image quality and brain specificity. These improvements in instrumentation prompt the need for advancements in both i) realistic forward light modeling for accurate HD-DOT image reconstruction, and ii) spatial normalization for voxel-wise comparisons across subjects. Individualized forward light models derived from subject-specific anatomical images provide the optimal inverse solutions, but such modeling may not be feasible in all situations. In the absence of subject-specific anatomical images, atlas-based head models registered to the subject's head using cranial fiducials provide an alternative solution. In addition, a standard atlas is attractive because it defines a common coordinate space in which to compare results across subjects. The question therefore arises as to whether atlas-based forward light modeling ensures adequate HD-DOT image quality at the individual and group level. Herein, we demonstrate the feasibility of using atlas-based forward light modeling and spatial normalization methods. Both techniques are validated using subject-matched HD-DOT and fMRI data sets for visual evoked responses measured in five healthy adult subjects. HD-DOT reconstructions obtained with the registered atlas anatomy (i.e. atlas DOT) had an average localization error of 2.7mm relative to reconstructions obtained with the subject-specific anatomical images (i.e. subject-MRI DOT), and 6.6mm relative to fMRI data. At the group level, the localization error of atlas DOT reconstruction was 4.2mm relative to subject-MRI DOT reconstruction, and 6.1mm relative to fMRI. These results show that atlas-based image reconstruction provides a viable approach to individual head modeling for HD-DOT when anatomical imaging is not available. Copyright © 2013. Published by Elsevier Inc.
High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si
NASA Astrophysics Data System (ADS)
Jung, Daehwan; Norman, Justin; Kennedy, M. J.; Shang, Chen; Shin, Bongki; Wan, Yating; Gossard, Arthur C.; Bowers, John E.
2017-09-01
We demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Electron channeling contrast imaging measurements show a threading dislocation density of 7.3 × 106 cm-2 from an optimized GaAs template grown on GaP/Si. The high-quality GaAs templates enable as-cleaved quantum dot lasers to achieve a room-temperature continuous-wave (CW) threshold current of 9.5 mA, a threshold current density as low as 132 A/cm2, a single-side output power of 175 mW, and a wall-plug-efficiency of 38.4% at room temperature. As-cleaved QD lasers show ground-state CW lasing up to 80 °C. The application of a 95% high-reflectivity coating on one laser facet results in a CW threshold current of 6.7 mA, which is a record-low value for any kind of Fabry-Perot laser grown on Si.
Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dots
NASA Astrophysics Data System (ADS)
Chen, J. F.; Chiang, C. H.; Wu, Y. H.; Chang, L.; Chi, J. Y.
2008-07-01
This work investigates the surfactant effect on exposed and buried InAs quantum dots (QDs) by incorporating Sb into the QD layers with various Sb beam equivalent pressures (BEPs). Secondary ion mass spectroscopy shows the presence of Sb in the exposed and buried QD layers with the Sb intensity in the exposed layer substantially exceeding that in the buried layer. Incorporating Sb can reduce the density of the exposed QDs by more than two orders of magnitude. However, a high Sb BEP yields a surface morphology with a regular periodic structure of ellipsoid terraces. A good room-temperature photoluminescence (PL) at ˜1600 nm from the exposed QDs is observed, suggesting that the Sb incorporation probably improves the emission efficiency by reducing the surface recombination velocity at the surface of the exposed QDs. Increasing Sb BEP causes a blueshift of the emission from the exposed QDs due to a reduction in the dot height as suggested by atomic force microscopy. Increasing Sb BEP can also blueshift the ˜1300 nm emission from the buried QDs by decreasing the dot height. However, a high Sb BEP yields a quantum well-like PL feature formed by the clustering of the buried QDs into an undulated planar layer. These results indicate a marked Sb surfactant effect that can be used to control the density, shape, and luminescence of the exposed and buried QDs.
Fabrication and characterization of silicon quantum dots in Si-rich silicon carbide films.
Chang, Geng-Rong; Ma, Fei; Ma, Dayan; Xu, Kewei
2011-12-01
Amorphous Si-rich silicon carbide films were prepared by magnetron co-sputtering and subsequently annealed at 900-1100 degrees C. After annealing at 1100 degrees C, this configuration of silicon quantum dots embedded in amorphous silicon carbide formed. X-ray photoelectron spectroscopy was used to study the chemical modulation of the films. The formation and orientation of silicon quantum dots were characterized by glancing angle X-ray diffraction, which shows that the ratio of silicon and carbon significantly influences the species of quantum dots. High-resolution transmission electron microscopy investigations directly demonstrated that the formation of silicon quantum dots is heavily dependent on the annealing temperatures and the ratio of silicon and carbide. Only the temperature of about 1100 degrees C is enough for the formation of high-density and small-size silicon quantum dots due to phase separation and thermal crystallization. Deconvolution of the first order Raman spectra shows the existence of a lower frequency peak in the range 500-505 cm(-1) corresponding to silicon quantum dots with different atom ratio of silicon and carbon.
Jin, Xiao; Chang, Chun; Zhao, Weifeng; Huang, Shujuan; Gu, Xiaobing; Zhang, Qin; Li, Feng; Zhang, Yubao; Li, Qinghua
2018-05-09
The electron-blocking layer (EBL) is important to balance the charge carrier transfer and achieve highly efficient quantum dot light-emitting diodes (QLEDs). Here, we report the utilization of a soluble tert-butyldimethylsilyl chloride-modified poly( p-phenylene benzobisoxazole) (TBS-PBO) as an EBL for simultaneous good charge carrier transfer balance while maintaining a high current density. We show that the versatile TBS-PBO blocks excess electron injection into the quantum dots (QDs), thus leading to better charge carrier transfer balance. It also restricts the undesired QD-to-EBL electron-transfer process, which preserves the superior emission capabilities of the emitter. As a consequence, the TBS-PBO device delivers an external quantum efficiency (EQE) maximum of 16.7% along with a remarkable current density as high as 139 mA/cm 2 with a brightness of 5484 cd/m 2 . The current density of our device is higher than those of insulator EBL-based devices because of the higher conductivity of the TBS-PBO versus insulator EBL, thus helping achieve high luminance values ranging from 1414 to 20 000 cd/cm 2 with current densities ranging from 44 to 648 mA/cm 2 and EQE > 14%. We believe that these unconventional features of the present TBS-PBO-based QLEDs will expand the wide use of TBS-PBO as buffer layers in other advanced QLED applications.
Quantum-Dot Laser for Wavelengths of 1.8 to 2.3 micron
NASA Technical Reports Server (NTRS)
Qiu, Yueming
2006-01-01
The figure depicts a proposed semiconductor laser, based on In(As)Sb quantum dots on a (001) InP substrate, that would operate in the wavelength range between 1.8 and 2.3 m. InSb and InAsSb are the smallest-bandgap conventional III-V semiconductor materials, and the present proposal is an attempt to exploit the small bandgaps by using InSb and InAsSb nanostructures as midinfrared emitters. The most closely related prior III-V semiconductor lasers are based, variously, on strained InGaAs quantum wells and InAs quantum dots on InP substrates. The emission wavelengths of these prior devices are limited to about 2.1 m because of critical quantum-well thickness limitations for these lattice mismatched material systems. The major obstacle to realizing the proposed laser is the difficulty of fabricating InSb quantum dots in sufficient density on an InP substrate. This difficulty arises partly because of the weakness of the bond between In and Sb and partly because of the high temperature needed to crack metalorganic precursor compounds during the vapor-phase epitaxy used to grow quantum dots: The mobility of the weakly bound In at the high growth temperature is so high that In adatoms migrate easily on the growth surface, resulting in the formation of large InSb islands at a density, usually less than 5 x 10(exp 9) cm(exp -2), that is too low for laser operation. The mobility of the In adatoms could be reduced by introducing As atoms to the growth surface because the In-As bond is about 30 percent stronger than is the In-Sb bond. The fabrication of the proposed laser would include a recently demonstrated process that involves the use of alternative supplies of precursors to separate group-III and group-V species to establish local non-equilibrium process conditions, so that In(As)Sb quantum dots assemble themselves on a (001) InP substrate at a density as high as 4 x 10(exp 10) cm(exp -2). Room-temperature photoluminescence spectra of quantum dots formed by this process indicate that they emit at wavelengths from 1.7 to 2.3 microns.
1.55 µm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser
NASA Astrophysics Data System (ADS)
Zhang, Z. Y.; Oehler, A. E. H.; Resan, B.; Kurmulis, S.; Zhou, K. J.; Wang, Q.; Mangold, M.; Süedmeyer, T.; Keller, U.; Weingarten, K. J.; Hogg, R. A.
2012-06-01
High pulse repetition rate (>=10 GHz) diode-pumped solid-state lasers, modelocked using semiconductor saturable absorber mirrors (SESAMs) are emerging as an enabling technology for high data rate coherent communication systems owing to their low noise and pulse-to-pulse optical phase-coherence. Quantum dot (QD) based SESAMs offer potential advantages to such laser systems in terms of reduced saturation fluence, broader bandwidth, and wavelength flexibility. Here, we describe the development of an epitaxial process for the realization of high optical quality 1.55 µm In(Ga)As QDs on GaAs substrates, their incorporation into a SESAM, and the realization of the first 10 GHz repetition rate QD-SESAM modelocked laser at 1.55 µm, exhibiting ~2 ps pulse width from an Er-doped glass oscillator (ERGO). With a high areal dot density and strong light emission, this QD structure is a very promising candidate for many other applications, such as laser diodes, optical amplifiers, non-linear and photonic crystal based devices.
Photoluminescence Spectra From The Direct Energy Gap of a-SiQDs
NASA Astrophysics Data System (ADS)
Abdul-Ameer, Nidhal M.; Abdulrida, Moafak C.; Abdul-Hakeem, Shatha M.
2018-05-01
A theoretical model for radiative recombination in amorphous silicon quantum dots (a-SiQDs) was developed. In this model, for the first time, the coexistence of both spatial and quantum confinements were considered. Also, it is found that the photoluminescence exhibits significant size dependence in the range (1-4) nm of the quantum dots. a-SiQDs show visible light emission peak energies and high radiative quantum efficiency at room temperature,in contrast to bulk a-Si structures. The quantum efficiency is sensitive to any change in defect density (the volume nonradiative centers density and/or the surface nonradiative centers density) but, with small dots sizes, the quantum efficiency is insensitive to such defects. Our analysis shows that the photoluminescence intensity increases or decreases by the effect of radiative quantum efficiency. By controlling the size of a-SiQDs, we note that the energy of emission can be tuned. The blue shift is attributed to quantum confinement effect. Meanwhile, the spatial confinement effect is clearly observed in red shift in emission spectra. we found a good agreement with the experimental published data. Therefore, we assert that a-SiQDs material is a promising candidate for visible, tunable, and high performance devices of light emitting.
Communication: Photoinduced carbon dioxide binding with surface-functionalized silicon quantum dots.
Douglas-Gallardo, Oscar A; Sánchez, Cristián Gabriel; Vöhringer-Martinez, Esteban
2018-04-14
Nowadays, the search for efficient methods able to reduce the high atmospheric carbon dioxide concentration has turned into a very dynamic research area. Several environmental problems have been closely associated with the high atmospheric level of this greenhouse gas. Here, a novel system based on the use of surface-functionalized silicon quantum dots (sf-SiQDs) is theoretically proposed as a versatile device to bind carbon dioxide. Within this approach, carbon dioxide trapping is modulated by a photoinduced charge redistribution between the capping molecule and the silicon quantum dots (SiQDs). The chemical and electronic properties of the proposed SiQDs have been studied with a Density Functional Theory and Density Functional Tight-Binding (DFTB) approach along with a time-dependent model based on the DFTB framework. To the best of our knowledge, this is the first report that proposes and explores the potential application of a versatile and friendly device based on the use of sf-SiQDs for photochemically activated carbon dioxide fixation.
Communication: Photoinduced carbon dioxide binding with surface-functionalized silicon quantum dots
NASA Astrophysics Data System (ADS)
Douglas-Gallardo, Oscar A.; Sánchez, Cristián Gabriel; Vöhringer-Martinez, Esteban
2018-04-01
Nowadays, the search for efficient methods able to reduce the high atmospheric carbon dioxide concentration has turned into a very dynamic research area. Several environmental problems have been closely associated with the high atmospheric level of this greenhouse gas. Here, a novel system based on the use of surface-functionalized silicon quantum dots (sf-SiQDs) is theoretically proposed as a versatile device to bind carbon dioxide. Within this approach, carbon dioxide trapping is modulated by a photoinduced charge redistribution between the capping molecule and the silicon quantum dots (SiQDs). The chemical and electronic properties of the proposed SiQDs have been studied with a Density Functional Theory and Density Functional Tight-Binding (DFTB) approach along with a time-dependent model based on the DFTB framework. To the best of our knowledge, this is the first report that proposes and explores the potential application of a versatile and friendly device based on the use of sf-SiQDs for photochemically activated carbon dioxide fixation.
Orgel, Etan; Mueske, Nicole M; Sposto, Richard; Gilsanz, Vicente; Wren, Tishya A L; Freyer, David R; Butturini, Anna M; Mittelman, Steven D
2017-10-01
Adolescents with acute lymphoblastic leukemia (ALL) develop osteopenia early in therapy, potentially exacerbated by high rates of concurrent Vitamin D deficiency. We conducted a randomized clinical trial testing a Vitamin D-based intervention to improve Vitamin D status and reduce bone density decline. Poor adherence to home supplementation necessitated a change to directly observed therapy (DOT) with intermittent, high-dose Vitamin D3 randomized versus standard of care (SOC). Compared to SOC, DOT Vitamin D3 successfully increased trough Vitamin 25(OH)D levels (p = .026) with no residual Vitamin D deficiency, 100% adherence to DOT Vitamin D3, and without associated toxicity. However, neither Vitamin D status nor supplementation impacted bone density. Thus, this adherence-optimized intervention is feasible and effective to correct Vitamin D deficiency in adolescents during ALL therapy. Repletion of Vitamin D and calcium alone did not mitigate osteopenia, however, and new, comprehensive approaches are needed to address treatment-associated osteopenia during ALL therapy.
Strain-rate/temperature behavior of high density polyethylene in compression
NASA Technical Reports Server (NTRS)
Clements, L. L.; Sherby, O. D.
1978-01-01
The compressive strain rate/temperature behavior of highly linear, high density polyethylene was analyzed in terms of the predictive relations developed for metals and other crystalline materials. For strains of 5 percent and above, the relationship between applied strain rate, dotted epsilon, and resulting flow stress, sigma, was found to be: dotted epsilon exp times (Q sub f/RT) = k'(sigma/sigma sub c) to the nth power; the left-hand side is the activation-energy-compensated strain rate, where Q sub f is activation energy for flow, R is gas constant, and T is temperature; k is a constant, n is temperature-independent stress exponent, and sigma/sigma sub c is structure-compensated stress. A master curve resulted from a logarithmic plot of activation-energy-compensated strain rate versus structure-compensated stress.
Entanglement in a quantum neural network based on quantum dots
NASA Astrophysics Data System (ADS)
Altaisky, M. V.; Zolnikova, N. N.; Kaputkina, N. E.; Krylov, V. A.; Lozovik, Yu E.; Dattani, N. S.
2017-05-01
We studied the quantum correlations between the nodes in a quantum neural network built of an array of quantum dots with dipole-dipole interaction. By means of the quasiadiabatic path integral simulation of the density matrix evolution in a presence of the common phonon bath we have shown the coherence in such system can survive up to the liquid nitrogen temperature of 77 K and above. The quantum correlations between quantum dots are studied by means of calculation of the entanglement of formation in a pair of quantum dots with the typical dot size of a few nanometers and interdot distance of the same order. We have shown that the proposed quantum neural network can keep the mixture of entangled states of QD pairs up to the above mentioned high temperatures.
ZnO nanostructures with different morphology for enhanced photocatalytic activity
NASA Astrophysics Data System (ADS)
Peter, I. John; Praveen, E.; Vignesh, G.; Nithiananthi, P.
2017-12-01
ZnO nanomaterials of different morphologies have been synthesized and the effect of morphology on Photocatalytic activity on natural dye has been investigated. Crystalline size and lattice strain of the synthesized particles are determined by XRD analysis and Williamson-Hall (W-H) method respectively. All other important physical parameters such as strain, stress and energy density values are also calculated using W-H analysis using different models such as uniform deformation model, uniform deformation stress model and uniform deformation energy density model. A shift in the peak of FTIR spectrum of ZnO is observed due to morphology effects. The SEM analysis reveals that the synthesized ZnO nanoparticles appear as flake, rod and dot. ZnO quantum dot exhibits higher photocatalytic activity comparing to the other morphologies. Larger surface area, high adsorption rate, large charge separation and the slow recombination of electrons/holes in ZnO dots establish dots as favorable morphology for good photocatalysis. Among the three, ZnO quantum dot shows three-times enhancement in the kinetic rate constants of photocatalysis. The results confirm that availability of specific (active) surface area, photocatalytic potential and quantum confinement of photo-induced carriers differ with morphology.
Design of a High-Power White Light Source with Colloidal Quantum Dots and Non-Rare-Earth Phosphors
NASA Astrophysics Data System (ADS)
Bicanic, Kristopher T.
This thesis describes the design process of a high-power white light source, using novel phosphor and colloidal quantum dot materials. To incorporate multiple light emitters, we generalized and extended a down-converting layer model. We employed a phosphor mixture comprising of YAG:Ce and K2TiF 6:Mn4+ powders to illustrate the effectiveness of the model. By incorporating experimental photophysical results from the phosphors and colloidal quantum dots, we modeled our system and chose the design suitable for high-power applications. We report a reduction in the correlated color temperature by 600K for phosphor and quantum dot systems, enabling the creation of a warm white light emission at power densities up to 5 kW/cm 2. Furthermore, at this high-power, their emission achieves the digital cinema initiative (DCI) requirements with a luminescence efficacy improvement up to 32% over the stand-alone ceramic YAG:Ce phosphor.
Ab Initio Reaction Kinetics of CH 3 O$$\\dot{C}$$(=O) and $$\\dot{C}$$H 2 OC(=O)H Radicals
DOE Office of Scientific and Technical Information (OSTI.GOV)
Tan, Ting; Yang, Xueliang; Ju, Yiguang
The dissociation and isomerization kinetics of the methyl ester combustion intermediates methoxycarbonyl radical (CH3Omore » $$\\dot{C}$$(=O)) and (formyloxy)methyl radical ($$\\dot{C}$$H2OC(=O)H) are investigated theoretically using high-level ab initio methods and Rice–Ramsperger–Kassel–Marcus (RRKM)/master equation (ME) theory. Geometries obtained at the hybrid density functional theory (DFT) and coupled cluster singles and doubles with perturbative triples correction (CCSD(T)) levels of theory are found to be similar. We employ high-level ab initio wave function methods to refine the potential energy surface: CCSD(T), multireference singles and doubles configuration interaction (MRSDCI) with the Davidson–Silver (DS) correction, and multireference averaged coupled-pair functional (MRACPF2) theory. MRSDCI+DS and MRACPF2 capture the multiconfigurational character of transition states (TSs) and predict lower barrier heights than CCSD(T). The temperature- and pressure-dependent rate coefficients are computed using RRKM/ME theory in the temperature range 300–2500 K and a pressure range of 0.01 atm to the high-pressure limit, which are then fitted to modified Arrhenius expressions. Dissociation of CH3O$$\\dot{C}$$(=O) to $$\\dot{C}$$H3 and CO2 is predicted to be much faster than dissociating to CH3$$\\dot{O}$$ and CO, consistent with its greater exothermicity. Isomerization between CH3O$$\\dot{C}$$(=O) and $$\\dot{C}$$H2OC(=O)H is predicted to be the slowest among the studied reactions and rarely happens even at high temperature and high pressure, suggesting the decomposition pathways of the two radicals are not strongly coupled. The predicted rate coefficients and branching fractions at finite pressures differ significantly from the corresponding high-pressure-limit results, especially at relatively high temperatures. Finally, because it is one of the most important CH3$$\\dot{O}$$ removal mechanisms under atmospheric conditions, the reaction kinetics of CH3$$\\dot{O}$$ + CO was also studied along the PES of CH3O$$\\dot{C}$$(=O); the resulting kinetics predictions are in remarkable agreement with experiments.« less
Dot-in-Well Quantum-Dot Infrared Photodetectors
NASA Technical Reports Server (NTRS)
Gunapala, Sarath; Bandara, Sumith; Ting, David; Hill, cory; Liu, John; Mumolo, Jason; Chang, Yia Chung
2008-01-01
Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material system is expected to enable achievement of greater densities of QDs and correspondingly greater quantum efficiencies. The host GaAs/AlGaAs MQW structures are highly compatible with mature fabrication processes that are now used routinely in making QWIP FPAs. The hybrid InGaAs-dot/GaAs/AlGaAs-well system also offers design advantages in that the effects of variability of dot size can be partly compensated by engineering quantum-well sizes, which can be controlled precisely.
NASA Astrophysics Data System (ADS)
Takahashi, S.; Ota, Y.; Tajiri, T.; Tatebayashi, J.; Iwamoto, S.; Arakawa, Y.
2017-11-01
The modification of a circularly polarized vacuum field in three-dimensional chiral photonic crystals was measured by spontaneous emission from quantum dots in the structures. Due to the circularly polarized eigenmodes along the helical axis in the GaAs-based mirror-asymmetric structures we studied, we observed highly circularly polarized emission from the quantum dots. Both spectroscopic and time-resolved measurements confirmed that the obtained circularly polarized light was influenced by a large difference in the photonic density of states between the orthogonal components of the circular polarization in the vacuum field.
Luo, Jun-Wei; Franceschetti, Alberto; Zunger, Alex
2008-10-01
Direct carrier multiplication (DCM) occurs when a highly excited electron-hole pair decays by transferring its excess energy to the electrons rather than to the lattice, possibly exciting additional electron-hole pairs. Atomistic electronic structure calculations have shown that DCM can be induced by electron-hole Coulomb interactions, in an impact-ionization-like process whose rate is proportional to the density of biexciton states rho XX. Here we introduce a DCM "figure of merit" R2(E) which is proportional to the ratio between the biexciton density of states rhoXX and the single-exciton density of states rhoX, restricted to single-exciton and biexciton states that are coupled by Coulomb interactions. Using R2(E), we consider GaAs, InAs, InP, GaSb, InSb, CdSe, Ge, Si, and PbSe nanocrystals of different sizes. Although DCM can be affected by both quantum-confinement effects (reflecting the underly electronic structure of the confined dot-interior states) and surface effects, here we are interested to isolate the former. To this end the nanocrystal energy levels are obtained from the corresponding bulk band structure via the truncated crystal approximation. We find that PbSe, Si, GaAs, CdSe, and InP nanocrystals have larger DCM figure of merit than the other nanocrystals. Our calculations suggest that high DCM efficiency requires high degeneracy of the corresponding bulk band-edge states. Interestingly, by considering band structure effects we find that as the dot size increases the DCM critical energy E0 (the energy at which R2(E) becomes >or=1) is reduced, suggesting improved DCM. However, whether the normalized E0/epsilong increases or decreases as the dot size increases depends on dot material.
NASA Astrophysics Data System (ADS)
Palmstrom, Axel F.; Santra, Pralay K.; Bent, Stacey F.
2015-07-01
Nanostructured materials offer key advantages for third-generation photovoltaics, such as the ability to achieve high optical absorption together with enhanced charge carrier collection using low cost components. However, the extensive interfacial areas in nanostructured photovoltaic devices can cause high recombination rates and a high density of surface electronic states. In this feature article, we provide a brief review of some nanostructured photovoltaic technologies including dye-sensitized, quantum dot sensitized and colloidal quantum dot solar cells. We then introduce the technique of atomic layer deposition (ALD), which is a vapor phase deposition method using a sequence of self-limiting surface reaction steps to grow thin, uniform and conformal films. We discuss how ALD has established itself as a promising tool for addressing different aspects of nanostructured photovoltaics. Examples include the use of ALD to synthesize absorber materials for both quantum dot and plasmonic solar cells, to grow barrier layers for dye and quantum dot sensitized solar cells, and to infiltrate coatings into colloidal quantum dot solar cell to improve charge carrier mobilities as well as stability. We also provide an example of monolayer surface modification in which adsorbed ligand molecules on quantum dots are used to tune the band structure of colloidal quantum dot solar cells for improved charge collection. Finally, we comment on the present challenges and future outlook of the use of ALD for nanostructured photovoltaics.
NASA Astrophysics Data System (ADS)
Narazaki, Aiko; Kurosaki, Ryozo; Sato, Tadatake; Kawaguchi, Yoshizo; Niino, Hiroyuki
2007-02-01
We printed FeSi II micro-dot array on various kinds of substrates utilizing laser-induced forward transfer (LIFT). An amorphous FeSi II was deposited by sputtering on a transparent plate as a source film. A single KrF excimer laser pulse through a mask-projection system was imaged with a small micrometer-sized grid pattern onto a film/plate interface, resulting in the deposition of FeSi II micro-dot array on a facing substrate with a high number density of 10 4 mm -2. FeSi II in the β crystalline phase is a promising eco-friendly semiconductor because of NIR electroluminescence used for optical networking as well as abundant components reserve on the earth and non-toxicity. However, the β-FeSi II film fabrication generally required high-temperature multi-processes which hamper its integration and performance reproducibility. Using the LIFT of micro-dot array, we succeeded in room-temperature preparation of β-FeSi II. Micro-Raman spectroscopy confirmed the β crystalline phase in the micro-dots deposited on an unheated silica glass substrate. Thus, the LIFT is useful for integrating functional micro-dot array accompanied by the crystallization at lower temperatures.
Transient Dynamics of Double Quantum Dots Coupled to Two Reservoirs
NASA Astrophysics Data System (ADS)
Fukadai, Takahisa; Sasamoto, Tomohiro
2018-05-01
We study the time-dependent properties of double quantum dots coupled to two reservoirs using the nonequilibrium Green function method. For an arbitrary time-dependent bias, we derive an expression for the time-dependent electron density of a dot and several currents, including the current between the dots in the wide-band-limit approximation. For the special case of a constant bias, we calculate the electron density and the currents numerically. As a result, we find that these quantities oscillate and that the number of crests in a single period of the current from a dot changes with the bias voltage. We also obtain an analytical expression for the relaxation time, which expresses how fast the system converges to its steady state. From the expression, we find that the relaxation time becomes constant when the coupling strength between the dots is sufficiently large in comparison with the difference of coupling strength between the dots and the reservoirs.
Third-harmonic generation of a laser-driven quantum dot with impurity
NASA Astrophysics Data System (ADS)
Sakiroglu, S.; Kilic, D. Gul; Yesilgul, U.; Ungan, F.; Kasapoglu, E.; Sari, H.; Sokmen, I.
2018-06-01
The third-harmonic generation (THG) coefficient for a laser-driven quantum dot with an on-center Gaussian impurity under static magnetic field is theoretically investigated. Laser field effect is treated within the high-frequency Floquet approach and the analytical expression of the THG coefficient is deduced from the compact density-matrix approach. The numerical results demonstrate that the application of intense laser field causes substantial changes on the behavior of THG. In addition the position and magnitude of the resonant peak of THG coefficient is significantly affected by the magnetic field, quantum dot size and the characteristic parameters of the impurity potential.
III-nitride quantum dots for ultra-efficient solid-state lighting
Wierer, Jr., Jonathan J.; Tansu, Nelson; Fischer, Arthur J.; ...
2016-05-23
III-nitride light-emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III-nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD-based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD-based LEDs achieve higher efficiencies at higher currents because of highermore » spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. In conclusion, if constructed properly, III-nitride light-emitting devices with QD active regions have the potential to outperform quantum well light-emitting devices, and enable an era of ultra-efficient solidstate lighting.« less
NASA Astrophysics Data System (ADS)
Tang, Yakun; Liu, Lang; Wang, Xingchao; Jia, Dianzeng; Xia, Wei; Zhao, Zongbin; Qiu, Jieshan
2016-07-01
TiO2 quantum dots embedded in bamboo-like porous carbon nanotubes have been constructed through the pyrolysis of sulfonated polymer nanotubes and TiO2 hybrids. The TiO2 quantum dots are formed during the pyrolysis, due to the space confinement within the highly cross-linked copolymer networks. The sulfonation degree of the polymer nanotubes is a critical factor to ensure the formation of the unique interpenetrating structure. The nanocomposites exhibit high reversible capacity of 523 mAh g-1 at 100 mA g-1 after 200 cycles, excellent rate capability and superior long-term cycling stability at high current density, which could attain a high discharge capacity of 189 mAh g-1 at 2000 mA g-1 for up to 2000 cycles. The enhanced electrochemical performance of the nanocomposites benefit from the uniform distribution of TiO2 quantum dots, high electronic conductivity of porous carbons and unique interpenetrating structure, which simultaneously solved the major problems of TiO2 anode facing the pulverization, loss of electrical contact and particle aggregation.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Cole, Jacqueline M.; Blood-Forsythe, Martin A.; Lin, Tze-Chia
Donor-pi-acceptor dyes containing thiophenyl pi-conjugated units and cyanoacrylate acceptor groups are among the best-performing organic chromophores used in dye-sensitized solar cell (DSC) applications. Yet, the molecular origins of their high photovoltaic output have remained unclear until now. This synchrotron-based X-ray diffraction study elucidates these origins for the high-performance thiophenylcyanoacrylate-based dye MK-2 (7.7% DSC device efficiency) and its molecular building block, MK-44. The crystal structures of MK-2 and MK-44 are both determined, while a high-resolution charge-density mapping of the smaller molecule was also possible, enabling the nature of its bonding to be detailed. A strong S center dot center dot centermore » dot C equivalent to N intramolecular interaction is discovered, which bears a bond critical point, thus proving that this interaction should be formally classified as a chemical bond. A topological analysis of the pi-conjugated portion of MK-44 shows that this S center dot center dot center dot C equivalent to N bonding underpins the highly efficient intramolecular charge transfer(ICT) in thiophenylcyanoacrylate dyes. This manifests as two bipartite ICT pathways bearing carboxylate and nitrile end points. In turn, these pathways dictate a preferred COO/CN anchoring mode for the dye as it adsorbs onto TiO2 surfaces, to form the dye TiO2 interface that constitutes the DSC working electrode. These results corroborate a recent proposal that all cyanoacrylate groups anchor onto TiO2 in this COO/CN binding configuration. Conformational analysis of the MK-44 and MK-2 crystal structures reveals that this S center dot center dot center dot C equivalent to N bonding will persist in MK-2. Accordingly, this newly discovered bond affords a rational explanation for the attractive photovoltaic properties of,MK-2. More generally, this study provides the first unequivocal evidence for an S center dot center dot center dot C equivalent to N interaction, confirming previous speculative assignments of such interactions in other compounds.« less
2013-08-29
similar layer thicknesses. This offset indicates that the electric field profile of our Schottky diode is different than for unpatterned samples, implying...sacrificing uniformity by further optimizing the substrate Figure 3. (a) Schematic of the Schottky diode heterostructure, indicating the patterned substrate...and negative (X−) trions are indicated . (c) Distribution of linewidths for 80 PL lines from dots grown in high density arrays such as those in Figure 2b
Low-density, radiatively inefficient rotating-accretion flow on to a black hole
NASA Astrophysics Data System (ADS)
Inayoshi, Kohei; Ostriker, Jeremiah P.; Haiman, Zoltán; Kuiper, Rolf
2018-05-01
We study low-density axisymmetric accretion flows on to black holes (BHs) with two-dimensional hydrodynamical simulations, adopting the α-viscosity prescription. When the gas angular momentum is low enough to form a rotationally supported disc within the Bondi radius (RB), we find a global steady accretion solution. The solution consists of a rotational equilibrium distribution around r ˜ RB, where the density follows ρ ∝ (1 + RB/r)3/2, surrounding a geometrically thick and optically thin accretion disc at the centrifugal radius RC(
How supernovae launch galactic winds?
NASA Astrophysics Data System (ADS)
Fielding, Drummond; Quataert, Eliot; Martizzi, Davide; Faucher-Giguère, Claude-André
2017-09-01
We use idealized three-dimensional hydrodynamic simulations of global galactic discs to study the launching of galactic winds by supernovae (SNe). The simulations resolve the cooling radii of the majority of supernova remnants (SNRs) and thus self-consistently capture how SNe drive galactic winds. We find that SNe launch highly supersonic winds with properties that agree reasonably well with expectations from analytic models. The energy loading (η _E= \\dot{E}_wind/ \\dot{E}_SN) of the winds in our simulations are well converged with spatial resolution while the wind mass loading (η _M= \\dot{M}_wind/\\dot{M}_\\star) decreases with resolution at the resolutions we achieve. We present a simple analytic model based on the concept that SNRs with cooling radii greater than the local scaleheight break out of the disc and power the wind. This model successfully explains the dependence (or lack thereof) of ηE (and by extension ηM) on the gas surface density, star formation efficiency, disc radius and the clustering of SNe. The winds our simulations are weaker than expected in reality, likely due to the fact that we seed SNe preferentially at density peaks. Clustering SNe in time and space substantially increases the wind power.
Han, Xugen; Zhong, Sihua; Pan, Wei; Shen, Wenzhong
2015-02-13
We propose a novel strategy to prepare highly luminescent carbon nanodots (C-dots) by employing a hydrothermal method with citric acid as the carbon source and ethylenediamine as the nitrogen source, together with adding moderate ammonia water (AW) to achieve both appropriate inner structure and excellent N passivation. The effect of pH value and AW amount on the luminescence properties has been thoroughly investigated. The photoluminescence quantum yield of the resultant C-dots reaches as high as 84.8%, which is of 10.56% higher than that of the C-dots synthesized in the absence of AW in the reaction precursors. We have further combined the highest luminescent C-dots with polyvinyl alcohol to form luminescent down-shifting layers on silicon nanowire solar cells. An effective enhancement of short-circuit current density has been realized and the contribution of the down-shifting has been extracted quantitatively from the deterioration of surface reflectance and the gain of the optical absorption redistribution by means of a theoretical model on external quantum efficiency analysis.
Improved dot size uniformity and luminescense of InAs quantum dots on InP substrate
NASA Technical Reports Server (NTRS)
Qiu, Y.; Uhl, D.
2002-01-01
InAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. Atomic Force Microscopy confirmed of quantum dot formation with dot density of 3X10(sup 10) cm(sup -2). Improved dot size uniformity and strong room temperature photoluminescence up to 2 micron were observed after modifying the InGaAs well.
Goswami, Prasenjit N; Mandal, Debranjan; Rath, Arup K
2018-01-18
Surface chemistry plays a crucial role in determining the electronic properties of quantum dot solids and may well be the key to mitigate loss processes involved in quantum dot solar cells. Surface ligands help to maintain the shape and size of the individual dots in solid films, to preserve the clean energy band gap of the individual particles and to control charge carrier conduction across solid films, in turn regulating their performance in photovoltaic applications. In this report, we show that the changes in size, shape and functional groups of small chain organic ligands enable us to modulate mobility, dielectric constant and carrier doping density of lead sulfide quantum dot solids. Furthermore, we correlate these results with performance, stability and recombination processes in the respective photovoltaic devices. Our results highlight the critical role of surface chemistry in the electronic properties of quantum dots. The role of the size, functionality and the surface coverage of the ligands in determining charge transport properties and the stability of quantum dot solids have been discussed. Our findings, when applied in designing new ligands with higher mobility and improved passivation of quantum dot solids, can have important implications for the development of high-performance quantum dot solar cells.
NASA Astrophysics Data System (ADS)
Abdelsalam, Hazem; Elhaes, Hanan; Ibrahim, Medhat A.
2018-03-01
The energy gap and dipole moment of chemically functionalized graphene quantum dots are investigated by density functional theory. The energy gap can be tuned through edge passivation by different elements or groups. Edge passivation by oxygen considerably decreases the energy gap in hexagonal nanodots. Edge states in triangular quantum dots can also be manipulated by passivation with fluorine. The dipole moment depends on: (a) shape and edge termination of the quantum dot, (b) attached group, and (c) position to which the groups are attached. Depending on the position of attached groups, the total dipole can be increased, decreased, or eliminated.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Seravalli, L.; Trevisi, G.; Frigeri, P.
We report on the growth by molecular beam epitaxy and the study by atomic force microscopy and photoluminescence of low density metamorphic InAs/InGaAs quantum dots. subcritical InAs coverages allow to obtain 10{sup 8} cm{sup -2} dot density and metamorphic In{sub x}Ga{sub 1-x}As (x=0.15,0.30) confining layers result in emission wavelengths at 1.3 {mu}m. We discuss optimal growth parameters and demonstrate single quantum dot emission up to 1350 nm at low temperatures, by distinguishing the main exciton complexes in these nanostructures. Reported results indicate that metamorphic quantum dots could be valuable candidates as single photon sources for long wavelength telecom windows.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Dadgostar, S.; Mogilatenko, A.; Masselink, W. T.
2016-03-07
We describe the optical emission and the carrier dynamics of an ensemble of self-assembled GaAs quantum dots embedded in GaP(001). The QD formation is driven by the 3.6% lattice mismatch between GaAs and GaP in the Stranski-Krastanow mode after deposition of more than 1.2 monolayers of GaAs. The quantum dots have an areal density between 6 and 7.6 × 10{sup 10} per cm{sup −2} and multimodal size distribution. The luminescence spectra show two peaks in the range of 1.7 and 2.1 eV. The samples with larger quantum dots have red emission and show less thermal quenching compared with the samples with smaller QDs.more » The large QDs luminescence up to room temperature. We attribute the high energy emission to indirect carrier recombination in the thin quantum wells or small strained quantum dots, whereas the low energy red emission is due to the direct electron-hole recombination in the relaxed quantum dots.« less
Atmospheric pressure-MOVPE growth of GaSb/GaAs quantum dots
NASA Astrophysics Data System (ADS)
Tile, Ngcali; Ahia, Chinedu C.; Olivier, Jaco; Botha, Johannes Reinhardt
2018-04-01
This study focuses on the growth of GaSb/GaAs quantum dots (QD) using an atmospheric pressure MOVPE system. For the best uncapped dots, the average dot height, base diameter and density are 5 nm, 45 nm and 4.5×1010 cm-2, respectively. Capping of GaSb QDs at high temperatures caused flattening and formation of thin inhomogeneous GaSb layer inside GaAs resulting in no obvious QD PL peak. Capping at low temperatures lead to the formation of dot-like features and a wetting layer (WL) with distinct PL peaks for QD and WL at 1097 nm and 983 nm respectively. Some of the dot-like features had voids. An increase in excitation power caused the QD and WL peaks to shift to higher energies. This is attributed to electrostatic band bending leading to triangular potential wells, typical of type-II alignment between GaAs and strained GaSb. Variable temperature PL measurements of the QD sample showed the decrease in the intensity of the WL peak to be faster than that of the QD peak as the temperature increased.
Exciton shelves for charge and energy transport in third-generation quantum-dot devices
NASA Astrophysics Data System (ADS)
Goodman, Samuel; Singh, Vivek; Noh, Hyunwoo; Casamada, Josep; Chatterjee, Anushree; Cha, Jennifer; Nagpal, Prashant
2014-03-01
Quantum dots are semiconductor nanocrystallites with size-dependent quantum-confined energy levels. While they have been intensively investigated to utilize hot-carriers for photovoltaic applications, to bridge the mismatch between incident solar photons and finite bandgap of semiconductor photocells, efficient charge or exciton transport in quantum-dot films has proven challenging. Here we show development of new coupled conjugated molecular wires with ``exciton shelves'', or different energy levels, matched with the multiple energy levels of quantum dots. Using single nanoparticle and ensemble device measurements we show successful extraction and transport of both bandedge and high-energy charge carriers, and energy transport of excitons. We demonstrate using measurements of electronic density of states, that careful matching of energy states of quantum-dot with molecular wires is important, and any mismatch can generate midgap states leading to charge recombination and reduced efficiency. Therefore, these exciton-shelves and quantum dots can lead to development of next-generation photovoltaic and photodetection devices using simultaneous transport of bandedge and hot-carriers or energy transport of excitons in these nanostructured solution-processed films.
NASA Astrophysics Data System (ADS)
Narayanan, Remya
2017-09-01
Carbon nanodot (C-dot) decorated V2O5 (C-dot@V2O5) nanobelts are synthesized by single step, low cost hydrothermal route at low temperature by using V2O5 and glucose as precursors. We have not added any extra organic solvents or surfactants which are commonly used for the preparation of different nanostructures of V2O5. Electron microscopy analyses demonstrate that C-dot is entrapped inside V2O5 nanobelts which in turn enhance the conductivity and ion propagation property of this composite material. The C-dot@V2O5 nanobelts exhibit an excellent three electrode electrochemical performance in 1 M Na2SO4 and which showed a specific capacitance of 270 F g-1 at 1 A g-1, which is 4.5 times higher than the pristine V2O5 electrode. The electrochemical energy storage capacity of this hybrid is investigated towards solid state supercapacitor application also for the first time by employing electrophoretically deposited C-dot as the counter electrode and Li based gel as the electrolyte. The hybrid material delivers an energy density of 60 W h kg-1 and a reasonably high power density of 4.1 kW kg-1 at 5 A g-1 and good cycling stability and capacitance retention of about 87% was observed even after 5000 cycles. Above mentioned results clearly show that C-dot embedded hybrid, nanostructured transition metal oxides has great potential towards fabrication of electrodes for energy storage devices.
Schatzl, Magdalena; Hackl, Florian; Glaser, Martin; Rauter, Patrick; Brehm, Moritz; Spindlberger, Lukas; Simbula, Angelica; Galli, Matteo; Fromherz, Thomas; Schäffler, Friedrich
2017-03-15
Efficient coupling to integrated high-quality-factor cavities is crucial for the employment of germanium quantum dot (QD) emitters in future monolithic silicon-based optoelectronic platforms. We report on strongly enhanced emission from single Ge QDs into L3 photonic crystal resonator (PCR) modes based on precise positioning of these dots at the maximum of the respective mode field energy density. Perfect site control of Ge QDs grown on prepatterned silicon-on-insulator substrates was exploited to fabricate in one processing run almost 300 PCRs containing single QDs in systematically varying positions within the cavities. Extensive photoluminescence studies on this cavity chip enable a direct evaluation of the position-dependent coupling efficiency between single dots and selected cavity modes. The experimental results demonstrate the great potential of the approach allowing CMOS-compatible parallel fabrication of arrays of spatially matched dot/cavity systems for group-IV-based data transfer or quantum optical systems in the telecom regime.
2017-01-01
Efficient coupling to integrated high-quality-factor cavities is crucial for the employment of germanium quantum dot (QD) emitters in future monolithic silicon-based optoelectronic platforms. We report on strongly enhanced emission from single Ge QDs into L3 photonic crystal resonator (PCR) modes based on precise positioning of these dots at the maximum of the respective mode field energy density. Perfect site control of Ge QDs grown on prepatterned silicon-on-insulator substrates was exploited to fabricate in one processing run almost 300 PCRs containing single QDs in systematically varying positions within the cavities. Extensive photoluminescence studies on this cavity chip enable a direct evaluation of the position-dependent coupling efficiency between single dots and selected cavity modes. The experimental results demonstrate the great potential of the approach allowing CMOS-compatible parallel fabrication of arrays of spatially matched dot/cavity systems for group-IV-based data transfer or quantum optical systems in the telecom regime. PMID:28345012
Design strategy for terahertz quantum dot cascade lasers.
Burnett, Benjamin A; Williams, Benjamin S
2016-10-31
The development of quantum dot cascade lasers has been proposed as a path to obtain terahertz semiconductor lasers that operate at room temperature. The expected benefit is due to the suppression of nonradiative electron-phonon scattering and reduced dephasing that accompanies discretization of the electronic energy spectrum. We present numerical modeling which predicts that simple scaling of conventional quantum well based designs to the quantum dot regime will likely fail due to electrical instability associated with high-field domain formation. A design strategy adapted for terahertz quantum dot cascade lasers is presented which avoids these problems. Counterintuitively, this involves the resonant depopulation of the laser's upper state with the LO-phonon energy. The strategy is tested theoretically using a density matrix model of transport and gain, which predicts sufficient gain for lasing at stable operating points. Finally, the effect of quantum dot size inhomogeneity on the optical lineshape is explored, suggesting that the design concept is robust to a moderate amount of statistical variation.
Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si
NASA Astrophysics Data System (ADS)
Jung, Daehwan; Herrick, Robert; Norman, Justin; Turnlund, Katherine; Jan, Catherine; Feng, Kaiyin; Gossard, Arthur C.; Bowers, John E.
2018-04-01
We investigate the impact of threading dislocation density on the reliability of 1.3 μm InAs quantum dot lasers epitaxially grown on Si. A reduction in the threading dislocation density from 2.8 × 108 cm-2 to 7.3 × 106 cm-2 has improved the laser lifetime by about five orders of magnitude when aged continuous-wave near room temperature (35 °C). We have achieved extrapolated lifetimes (time to double initial threshold) more than 10 × 106 h. An accelerated laser aging test at an elevated temperature (60 °C) reveals that p-modulation doped quantum dot lasers on Si retain superior reliability over unintentionally doped ones. These results suggest that epitaxially grown quantum dot lasers could be a viable approach to realize a reliable, scalable, and efficient light source on Si.
Overview and Summary of Advanced UVOIR Mirror Technology Development (AMTD) Project
NASA Technical Reports Server (NTRS)
Stahl, H. Philip
2014-01-01
ASTRO2010 Decadal Survey stated that an advanced large-aperture ultraviolet, optical, near-infrared (UVOIR) telescope is required to enable the next generation of compelling astrophysics and exoplanet science; and, that present technology is not mature enough to affordably build and launch any potential UVOIR mission concept. AMTD is a multiyear effort to develop, demonstrate and mature critical technologies to TRL-6 by 2018 so that a viable flight mission can be proposed to the 2020 Decadal Review. AMTD builds on the state of art (SOA) defined by over 30 years of monolithic & segmented ground & space-telescope mirror technology to mature six key technologies: center dotLarge-Aperture, Low Areal Density, High Stiffness Mirror Substrates: Both (4 to 8 m) monolithic and (8 to 16 m) segmented telescopes require larger and stiffer mirrors. center dotSupport System: Large-aperture mirrors require large support systems to ensure that they survive launch, deploy on orbit, and maintain a stable, undistorted shape. center dotMid/High Spatial Frequency Figure Error: Very smooth mirror is critical for producing high-quality point spread function (PSF) for high contrast imaging. center dotSegment Edges: The quality of segment edges impacts PSF for high-contrast imaging applications, contributes to stray light noise, and affects total collecting aperture. center dotSegment to Segment Gap Phasing: Segment phasing is critical for producing high-quality temporally-stable PSF. center dotIntegrated Model Validation: On-orbit performance is driven by mechanical & thermal stability. Compliance cannot be 100% tested, but relies on modeling. Because we cannot predict the future, AMTD is pursuing multiple design paths to provide the science community with options to enable either large aperture monolithic or segmented mirrors with clear engineering metrics traceable to science requirements
Highly Efficient Moisture-Triggered Nanogenerator Based on Graphene Quantum Dots.
Huang, Yaxin; Cheng, Huhu; Shi, Gaoquan; Qu, Liangti
2017-11-08
A high-performance moisture triggered nanogenerator is fabricated by using graphene quantum dots (GQDs) as the active material. GQDs are prepared by direct oxidation and etching of natural graphite powder, which have small sizes of 2-5 nm and abundant oxygen-containing functional groups. After the treatment by electrochemical polarization, the GQDs-based moisture triggered nanogenerator can deliver a high voltage up to 0.27 V under 70% relative humidity variation, and a power density of 1.86 mW cm -2 with an optimized load resistor. The latter value is much higher than the moisture-electric power generators reported previously. The GQD moisture triggered nanogenerator is promising for self-power electronics and miniature sensors.
Properties and applications of submicron magnetic structures
NASA Astrophysics Data System (ADS)
Silevitch, Daniel Marc
The interactions between an array of magnetic dots and a superconducting thin film were studied using transport measurements and magnetic imaging. The transport measurements examined the enhancement in the pinning of flux vortices when the vortex lattice was commensurate with the dot array. The degradation of the pinning enhancement due to the controlled introduction of disorder into the dot lattice was studied. Enhanced pinning was observed to persist in disordered arrays when the vortex lattice had the same density as the dot lattice. When the vortex density was an integral multiple of the dot lattice density, the enhanced pinning was suppressed with increasing disorder. Magnetic imaging was carried out on superconductors with ordered arrays of pinning sites. The vortices were observed to form regions of local order even when the vortex density was less than the dot density. There were also a significant number of vortices pinned in the interstitials of the dot lattice, indicating that the pinning potential is comparable in strength to the inter-vortex repulsion. The transport properties of ferromagnetic nanowires were also investigated. The behavior of straight nanowires was studied as a function of the magnitude and angle of the applied magnetic field. A model was developed for the magnetization behavior of the nanowire which reproduced the observed transport properties. The magnetic reversal properties were examined and found to be consistent with the curling mode of reversal, and an estimate for the initial nucleation volume was obtained. This behavior was compared to the behavior of mechanically bent nanowires. The bent wires were qualitatively similar to two independent straight wires. The bent wires, however, also showed interaction effects due to the domain configuration that had an effect on the magnetization behavior. An estimate for the energy barrier of nucleating a domain wall in a nanowire was derived from these interaction effects. A resistance contribution due to the domain configuration was isolated; the resistance was found to decrease in the presence of a domain wall.
Effects of Parkinson’s disease on optic flow perception for heading direction during navigation
Wagenaar, Robert C.; Young, Daniel; Saltzman, Elliot L.; Ren, Xiaolin; Neargarder, Sandy; Cronin-Golomb, Alice
2015-01-01
Visuoperceptual disorders have been identified in individuals with Parkinson’s disease (PD) and may affect the perception of optic flow for heading direction during navigation. Studies in healthy subjects have confirmed that heading direction can be determined by equalizing the optic flow speed (OS) between visual fields. The present study investigated the effects of PD on the use of optic flow for heading direction, walking parameters, and interlimb coordination during navigation, examining the contributions of OS and spatial frequency (dot density). Twelve individuals with PD without dementia, 18 age-matched normal control adults (NC), and 23 young control adults (YC) walked through a virtual hallway at about 0.8 m/s. The hallway was created by random dots on side walls. Three levels of OS (0.8, 1.2, and 1.8 m/s) and dot density (1, 2, and 3 dots/m2) were presented on one wall while on the other wall, OS and dot density were fixed at 0.8 m/s and 3 dots/m2, respectively. Three-dimensional kinematic data were collected, and lateral drift, walking speed, stride frequency and length, and frequency, and phase relations between arms and legs were calculated. A significant linear effect was observed on lateral drift to the wall with lower OS for YC and NC, but not for PD. Compared to YC and NC, PD veered more to the left under OS and dot density conditions. The results suggest that healthy adults perceive optic flow for heading direction. Heading direction in PD may be more affected by the asymmetry of dopamine levels between the hemispheres and by motor lateralization as indexed by handedness. PMID:24510351
Accretion Rates for T Tauri Stars Using Nearly Simultaneous Ultraviolet and Optical Spectra
NASA Astrophysics Data System (ADS)
Ingleby, Laura; Calvet, Nuria; Herczeg, Gregory; Blaty, Alex; Walter, Frederick; Ardila, David; Alexander, Richard; Edwards, Suzan; Espaillat, Catherine; Gregory, Scott G.; Hillenbrand, Lynne; Brown, Alexander
2013-04-01
We analyze the accretion properties of 21 low-mass T Tauri stars using a data set of contemporaneous near-UV (NUV) through optical observations obtained with the Hubble Space Telescope Imaging Spectrograph and the ground-based Small and Medium Aperture Research Telescope System, a unique data set because of the nearly simultaneous broad wavelength coverage. Our data set includes accreting T Tauri stars in Taurus, Chamaeleon I, η Chamaeleon, and the TW Hydra Association. For each source we calculate the accretion rate (\\dot{M}) by fitting the NUV and optical excesses above the photosphere, produced in the accretion shock, introducing multiple accretion components characterized by a range in energy flux (or density) for the first time. This treatment is motivated by models of the magnetospheric geometry and accretion footprints, which predict that high-density, low filling factor accretion spots coexist with low-density, high filling factor spots. By fitting the UV and optical spectra with multiple accretion components, we can explain excesses which have been observed in the near-IR. Comparing our estimates of \\dot{M} to previous estimates, we find some discrepancies; however, they may be accounted for when considering assumptions for the amount of extinction and variability in optical spectra. Therefore, we confirm many previous estimates of the accretion rate. Finally, we measure emission line luminosities from the same spectra used for the \\dot{M} estimates, to produce correlations between accretion indicators (Hβ, Ca II K, C II], and Mg II) and accretion properties obtained simultaneously.
NASA Astrophysics Data System (ADS)
Gastaldo, Daniele; Conta, Gianluca; Coïsson, Marco; Amato, Giampiero; Tiberto, Paola; Allia, Paolo
2018-05-01
A method for the synthesis of room-temperature ferromagnetic dilute semiconductor Ge1-xMnx (5 % < x < 8 %) quantum dots by molecular beam epitaxy by selective growth on hydrogen terminated silicon (100) surface is presented. The functionalized substrates, as well as the nanostructures, were characterized in situ by reflection high-energy electron diffraction. The quantum dots density and equivalent radius were extracted from field emission scanning electron microscope pictures, obtained ex-situ. Magnetic characterizations were performed by superconducting quantum interference device vibrating sample magnetometry revealing that ferromagnetic order is maintained up to room temperature: two different ferromagnetic phases were identified by the analysis of the field cooled - zero field cooled measurements.
Videogrammetry Using Projected Circular Targets: Proof-of-Concept Test
NASA Technical Reports Server (NTRS)
Pappa, Richard S.; Black, Jonathan T.
2003-01-01
Videogrammetry is the science of calculating 3D object coordinates as a function of time from image sequences. It expands the method of photogrammetry to multiple time steps enabling the object to be characterized dynamically. Photogrammetry achieves the greatest accuracy with high contrast, solid-colored, circular targets. The high contrast is most often effected using retro-reflective targets attached to the measurement article. Knowledge of the location of each target allows those points to be tracked in a sequence of images, thus yielding dynamic characterization of the overall object. For ultra-lightweight and inflatable gossamer structures (e.g. solar sails, inflatable antennae, sun shields, etc.) where it may be desirable to avoid physically attaching retro-targets, a high-density grid of projected circular targets - called dot projection - is a viable alternative. Over time the object changes shape or position independently of the dots. Dynamic behavior, such as deployment or vibration, can be characterized by tracking the overall 3D shape of the object instead of tracking specific object points. To develop this method, an oscillating rigid object was measured using both retroreflective targets and dot projection. This paper details these tests, compares the results, and discusses the overall accuracy of dot projection videogrammetry.
Videogrammetry Using Projected Circular Targets: Proof-of-Concept Test
NASA Technical Reports Server (NTRS)
Black, Jonathan T.; Pappa, Richard S.
2003-01-01
Videogrammetry is the science of calculating 3D object coordinates as a function of time from image sequences. It expands the method of photogrammetry to multiple time steps enabling the object to be characterized dynamically. Photogrammetry achieves the greatest accuracy with high contrast, solid-colored circular targets. The high contrast is most often effected using retro-reflective targets attached to the measurement article. Knowledge of the location of each target allows those points to be tracked in a sequence of images, thus yielding dynamic characterization of the overall object. For ultra-lightweight and inflatable gossamer structures (e.g. solar sails, inflatable antennae, sun shields, etc.) where it may be desirable to avoid physically attaching retro-targets, a high-density grid of projected circular targets - called dot projection - is a viable alternative. Over time the object changes shape or position independently of the dots. Dynamic behavior, such as deployment or vibration, can be characterized by tracking the overall 3D shape of the object instead of tracking specific object points. To develop this method, an oscillating rigid object was measured using both retro- reflective targets and dot projection. This paper details these tests, compares the results, and discusses the overall accuracy of dot projection videogrammetry.
Three-dimensional multichannel aerogel of carbon quantum dots for high-performance supercapacitors.
Lv, Lingxiao; Fan, Yueqiong; Chen, Qing; Zhao, Yang; Hu, Yue; Zhang, Zhipan; Chen, Nan; Qu, Liangti
2014-06-13
A three-dimensional (3D) carbon quantum dot (CQD) aerogel has been prepared by in situ assembling CQDs in the sol-gel polymerization of resorcinol (R) and formaldehyde (F) and subsequently pyrolyzing the formed CQD gel. Compared to the supercapacitor based on the CQD-free aerogel, the supercapacitor fabricated with the CQD aerogel showed 20-fold higher specific capacitance (294.7 F g(-1) at the current density of 0.5 A g(-1)) and an excellent stability over 1000 consecutive charge-discharge cycles.
Three-dimensional multichannel aerogel of carbon quantum dots for high-performance supercapacitors
NASA Astrophysics Data System (ADS)
Lv, Lingxiao; Fan, Yueqiong; Chen, Qing; Zhao, Yang; Hu, Yue; Zhang, Zhipan; Chen, Nan; Qu, Liangti
2014-06-01
A three-dimensional (3D) carbon quantum dot (CQD) aerogel has been prepared by in situ assembling CQDs in the sol-gel polymerization of resorcinol (R) and formaldehyde (F) and subsequently pyrolyzing the formed CQD gel. Compared to the supercapacitor based on the CQD-free aerogel, the supercapacitor fabricated with the CQD aerogel showed 20-fold higher specific capacitance (294.7 F g-1 at the current density of 0.5 A g-1) and an excellent stability over 1000 consecutive charge-discharge cycles.
Amorphous Ge quantum dots embedded in crystalline Si: ab initio results.
Laubscher, M; Küfner, S; Kroll, P; Bechstedt, F
2015-10-14
We study amorphous Ge quantum dots embedded in a crystalline Si matrix through structure modeling and simulation using ab initio density functional theory including spin-orbit interaction and quasiparticle effects. Three models are generated by replacing a spherical region within diamond Si by Ge atoms and creating a disordered bond network with appropriate density inside the Ge quantum dot. After total-energy optimisations of the atomic geometry we compute the electronic and optical properties. We find three major effects: (i) the resulting nanostructures adopt a type-I heterostructure character; (ii) the lowest optical transitions occur only within the Ge quantum dots, and do not involve or cross the Ge-Si interface. (iii) for larger amorphous Ge quantum dots, with diameters of about 2.0 and 2.7 nm, absorption peaks appear in the mid-infrared spectral region. These are promising candidates for intense luminescence at photon energies below the gap energy of bulk Ge.
Density-functional theory simulation of large quantum dots
NASA Astrophysics Data System (ADS)
Jiang, Hong; Baranger, Harold U.; Yang, Weitao
2003-10-01
Kohn-Sham spin-density functional theory provides an efficient and accurate model to study electron-electron interaction effects in quantum dots, but its application to large systems is a challenge. Here an efficient method for the simulation of quantum dots using density-function theory is developed; it includes the particle-in-the-box representation of the Kohn-Sham orbitals, an efficient conjugate-gradient method to directly minimize the total energy, a Fourier convolution approach for the calculation of the Hartree potential, and a simplified multigrid technique to accelerate the convergence. We test the methodology in a two-dimensional model system and show that numerical studies of large quantum dots with several hundred electrons become computationally affordable. In the noninteracting limit, the classical dynamics of the system we study can be continuously varied from integrable to fully chaotic. The qualitative difference in the noninteracting classical dynamics has an effect on the quantum properties of the interacting system: integrable classical dynamics leads to higher-spin states and a broader distribution of spacing between Coulomb blockade peaks.
Embedding Luminescent Nanocrystals in Silica Sol-Gel Matrices
2006-01-01
procedure necessary to form low-density silica aerogels using supercritical drying procedures. The resulting aerogel networks show a high surface area...reactions. Recent research that just begins to delve into the subject of taking quantum dot semiconductors in silica aerogels was published in...surface of the QD is desirable. As such, ultra low-density silica aerogel materials are an excellent medium for sensor applications as they can be
NASA Astrophysics Data System (ADS)
Shen, Jian Qi; Gu, Jing
2018-04-01
Atomic phase coherence (quantum interference) in a multilevel atomic gas exhibits a number of interesting phenomena. Such an atomic quantum coherence effect can be generalized to a quantum-dot molecular dielectric. Two quantum dots form a quantum-dot molecule, which can be described by a three-level Λ-configuration model { |0> ,|1> ,|2> } , i.e., the ground state of the molecule is the lower level |0> and the highly degenerate electronic states in the two quantum dots are the two upper levels |1> ,|2> . The electromagnetic characteristics due to the |0>-|1> transition can be controllably manipulated by a tunable gate voltage (control field) that drives the |2>-|1> transition. When the gate voltage is switched on, the quantum-dot molecular state can evolve from one steady state (i.e., |0>-|1> two-level dressed state) to another steady state (i.e., three-level coherent-population-trapping state). In this process, the electromagnetic characteristics of a quantum-dot molecular dielectric, which is modified by the gate voltage, will also evolve. In this study, the transient evolutional behavior of the susceptibility of a quantum-dot molecular thin film and its reflection spectrum are treated by using the density matrix formulation of the multilevel systems. The present field-tunable and frequency-sensitive electromagnetic characteristics of a quantum-dot molecular thin film, which are sensitive to the applied gate voltage, can be utilized to design optical switching devices.
Fast Single-Shot Hold Spin Readout in Double Quantum Dots
NASA Astrophysics Data System (ADS)
Bogan, Alexander; Studenikin, Sergei; Korkusinski, Marek; Aers, Geof; Gaudreau, Louis; Zawadzki, Piotr; Sachrajda, Andy; Tracy, Lisa; Reno, John; Hargett, Terry
Solid state spin qubits in quantum dots hold promise as scalable, high-density qubits in quantum information processing architectures. While much of the experimental investigation of these devices and their physics has focused on confined electron spins, hole spins in III-V semiconductors are attractive alternatives to electrons due to the reduced hyperfine coupling between the spin and the incoherent nuclear environment. In this talk, we will discuss a measurement protocol of the hole spin relaxation time T1 in a gated lateral GaAs double quantum dot tuned to the one and two-hole regimes, as well as a new technique for single-shot projective measurement of a single spin in tens of nanoseconds or less. The technique makes use of fast non-spin-conserving inter-dot transitions permitted by strong spin-orbit interactions for holes, as well as the latching of the charge state of the second quantum dot for enhanced sensitivity. This technique allows a direct measurement of the single spin relaxation time on time-scales set by physical device rather than by limitations of the measurement circuit.
Designing artificial 2D crystals with site and size controlled quantum dots.
Xie, Xuejun; Kang, Jiahao; Cao, Wei; Chu, Jae Hwan; Gong, Yongji; Ajayan, Pulickel M; Banerjee, Kaustav
2017-08-30
Ordered arrays of quantum dots in two-dimensional (2D) materials would make promising optical materials, but their assembly could prove challenging. Here we demonstrate a scalable, site and size controlled fabrication of quantum dots in monolayer molybdenum disulfide (MoS 2 ), and quantum dot arrays with nanometer-scale spatial density by focused electron beam irradiation induced local 2H to 1T phase change in MoS 2 . By designing the quantum dots in a 2D superlattice, we show that new energy bands form where the new band gap can be controlled by the size and pitch of the quantum dots in the superlattice. The band gap can be tuned from 1.81 eV to 1.42 eV without loss of its photoluminescence performance, which provides new directions for fabricating lasers with designed wavelengths. Our work constitutes a photoresist-free, top-down method to create large-area quantum dot arrays with nanometer-scale spatial density that allow the quantum dots to interfere with each other and create artificial crystals. This technique opens up new pathways for fabricating light emitting devices with 2D materials at desired wavelengths. This demonstration can also enable the assembly of large scale quantum information systems and open up new avenues for the design of artificial 2D materials.
Enhanced photocurrent density of HTM-free perovskite solar cells by carbon quantum dots
NASA Astrophysics Data System (ADS)
Zou, Haiyuan; Guo, Daipeng; He, Bowen; Yu, Jiaguo; Fan, Ke
2018-02-01
Full-printable and hole transport material (HTM)-free perovskite solar cells (PSCs) with carbon counter electrodes feature high stability and low cost. However, the perovskite film prepared by conventional one-step solution-coating method always shows a relatively poor coverage on the substrate, leading to the limit of the photocurrent density. In this study, we incorporated carbon quantum dots (CQDs) in the perovskite films, and investigated their effects on the performance of TiO2 nanosheet-based and HTM-free PSCs. It was found that the addition of CQDs to the perovskite film can enhance the photocurrent density of PSCs, and the optimal PSC with 0.1% CQDs evolved 60% higher photocurrent density than the pristine one. The improved photocurrent density was attributed to the heterogeneous nuclei derived from CQDs during perovskite crystallization, which would increase amount of perovskite nuclei and form a fine perovskite grain, leading to a better coverage on the substrate. Moreover, due to the excellent conductivity, CQDs in perovskite films could efficiently transport the photo-excited electrons, accelerating the separation and mobilization of charge carriers. This study presents the incorporation of CQDs in perovskite as an efficient approach to promote the performance of HTM-free PSCs.
NASA Astrophysics Data System (ADS)
Xu, Yongjie; Li, Xinyu; Hu, Guanghui; Wu, Ting; Luo, Yi; Sun, Lang; Tang, Tao; Wen, Jianfeng; Wang, Heng; Li, Ming
2017-11-01
Nitrogen-enriched graphene was fabricated via a facile strategy. Graphene oxide (GO) nanosheets and graphene oxide quantum dots (GQDs) were used as a structure-directing agent and in situ activating agent, respectively, after photoreduction under NH3 atmosphere. The combination of photoreduction and NH3 not only reduced GO and GQD composites (GO/GQDs) within a shorter duration but also doped a high level of nitrogen on the composites (NrGO/GQDs). The nitrogen content of NrGO/GQDs reached as high as 18.86 at% within 5 min of irradiation. Benefiting from the nitrogen-enriched GO/GQDs hybrid structure, GQDs effectively prevent the agglomeration of GO sheets and increased the numbers of ion channels in the material. Meanwhile, the high levels of nitrogen improved electrical conductivity and strengthened the binding energy between GQD and GO sheets. Compared with reduced GO and low nitrogen-doped reduced GO, NrGO/GQD electrodes exhibited better electrochemical characteristics with a high specific capacitance of 344 F g-1 at a current density of 0.25 A g-1. Moreover, the NrGO/GQD electrodes exhibited 82% capacitance retention after 3000 cycles at a current density of 0.8 A g-1 in 6 M KOH electrolyte. More importantly, the NrGO/GQD electrodes deliver a high energy density of 43 Wh kg-1 at a power density of 417 W kg-1 in 1 M Li2SO4 electrolyte. The nitrogen-doped graphene and corresponding supercapacitor presented in this study are novel materials with potential applications in advanced energy storage systems.
NASA Astrophysics Data System (ADS)
Rajbanshi, Biplab; Kar, Moumita; Sarkar, Pallavi; Sarkar, Pranab
2017-10-01
Using the self-consistent charge density-functional based tight-binding (SCC-DFTB) method, coupled with time-dependent density functional theory (TDDFT) calculations, for the first time we explore the possibility of use of phosphorene quantum dots in solar energy harvesting devices. The phosphorene quantum dots-fullerene (PQDs-PCBA) nanocomposites show type-II band alignment indicating spatial separation of charge carriers. The TDDFT calculations also show that the PQD-fullerene nanocomposites seem to be exciting material for future generation solar energy harvester, with extremely fast charge transfer and very poor recombination rate.
Silver electrodeposition on nanostructured gold: from nanodots to nanoripples.
Dos Santos Claro, P C; Fonticelli, M; Benítez, G; Azzaroni, O; Schilardi, P L; Luque, N B; Leiva, E; Salvarezza, R C
2006-07-28
Silver nanodots and nanoripples have been grown on nanocavity-patterned polycrystalline Au templates by controlled electrodeposition. The initial step is the growth of a first continuous Ag monolayer followed by preferential deposition at nanocavities. The Ag-coated nanocavities act as preferred sites for instantaneous nucleation and growth of the three-dimensional metallic centres. By controlling the amount of deposited Ag, dots of approximately 50 nm average size and approximately 4 nm average height can be grown with spatial and size distributions dictated by the template. The dots are in a metastable state. Further Ag deposition drives the dot surface structure to nanoripple formation. Results show that electrodeposition on nanopatterned electrodes can be used to prepare a high density of nanostructures with a narrow size distribution and spatial order.
Three-Dimensional Control of Self-Assembled Quantum Dot Configurations
2010-06-17
Lateral Quantum Dot Molecules Around Self-Assembled Nanoholes . Appl. Phys. Lett. 2003, 82, 2892–2894. 7. Alonso-Gonzalez, P.; Martin-Sanchez, J.; Gonzalez...Y.; Alen, B.; Fuster, D.; Gonzalez, L. Formation of Lateral Low Density In(Ga)As Quantum Dot Pairs in GaAs Nanoholes . Cryst. Growth Des. 2009, 9
NASA Astrophysics Data System (ADS)
Neumayer, Paul; Kritcher, Andrea; Landen, Otto; Lee, Haeja; Offerman, Dustin; Shipton, Eric; Glenzer, Siegfried
2006-10-01
X-ray Thomson scattering using short pulse laser generated intense line radiation has a great potential as a time-resolved temperature and density diagnostic for high-energy density states of matter. We present recent results characterizing Chlorine K-alpha and K-beta line emission obtained by irradiating Saran foil with 50 Terawatt laser pulses from the Callisto laser (Jupiter Laser Facility, Lawrence Livermore National Laboratory). Spectra from front and rear side emission are recorded simultaneously with high resolution HOPG spectrometers employing imaging plate detectors. Conversion efficiencies of laser pulse energy into x-ray line emission of several 10-5 are achieved and are maintained throughout up to 7 J of laser energy, thus constituting a short pulsed narrow band x-ray source of more than 10^11 photons. When the target size is reduced to 50 micrometer (``micro-dot'') a significant blue-shift of up to 5 eV is clearly observed. This can be attributed to higher ionization states of the target atoms indicating achievement of a high-temperature solid density state. This work was performed under the auspices of the U.S. Department of Energy by the Lawrence Livermore National Laboratory under Contract No. W-7405-ENG-48 and LDRD 05-ERI-003.
High-density diffuse optical tomography of term infant visual cortex in the nursery
NASA Astrophysics Data System (ADS)
Liao, Steve M.; Ferradal, Silvina L.; White, Brian R.; Gregg, Nicholas; Inder, Terrie E.; Culver, Joseph P.
2012-08-01
Advancements in antenatal and neonatal medicine over the last few decades have led to significant improvement in the survival rates of sick newborn infants. However, this improvement in survival has not been matched by a reduction in neurodevelopmental morbidities with increasing recognition of the diverse cognitive and behavioral challenges that preterm infants face in childhood. Conventional neuroimaging modalities, such as cranial ultrasound and magnetic resonance imaging, provide an important definition of neuroanatomy with recognition of brain injury. However, they fail to define the functional integrity of the immature brain, particularly during this critical developmental period. Diffuse optical tomography methods have established success in imaging adult brain function; however, few studies exist to demonstrate their feasibility in the neonatal population. We demonstrate the feasibility of using recently developed high-density diffuse optical tomography (HD-DOT) to map functional activation of the visual cortex in healthy term-born infants. The functional images show high contrast-to-noise ratio obtained in seven neonates. These results illustrate the potential for HD-DOT and provide a foundation for investigations of brain function in more vulnerable newborns, such as preterm infants.
Single photon emission from charged excitons in CdTe/ZnTe quantum dots
NASA Astrophysics Data System (ADS)
Belyaev, K. G.; Rakhlin, M. V.; Sorokin, S. V.; Klimko, G. V.; Gronin, S. V.; Sedova, I. V.; Mukhin, I. S.; Ivanov, S. V.; Toropov, A. A.
2017-11-01
We report on micro-photoluminescence studies of individual self-organized CdTe/ZnTe quantum dots intended for single-photon-source applications in a visible spectral range. The quantum dots surface density below 1010 per cm2 was achieved by using a thermally activated regime of molecular beam epitaxy that allowed fabrication of etched mesa-structures containing only a few emitting quantum dots. The single photon emission with the autocorrelation function g(2)(0)<0.2 was detected and identified as recombination of charged excitons in the individual quantum dot.
Giant gain from spontaneously generated coherence in Y-type double quantum dot structure
NASA Astrophysics Data System (ADS)
Al-Nashy, B.; Razzaghi, Sonia; Al-Musawi, Muwaffaq Abdullah; Rasooli Saghai, H.; Al-Khursan, Amin H.
A theoretical model was presented for linear susceptibility using density matrix theory for Y-configuration of double quantum dots (QDs) system including spontaneously generated coherence (SGC). Two SGC components are included for this system: V, and Λ subsystems. It is shown that at high V-component, the system have a giga gain. At low Λ-system component; it is possible to controls the light speed between superluminal and subluminal using one parameter by increasing SGC component of the V-system. This have applications in quantum information storage and spatially-varying temporal clock.
Incorporating structural analysis in a quantum dot Monte-Carlo model
NASA Astrophysics Data System (ADS)
Butler, I. M. E.; Li, Wei; Sobhani, S. A.; Babazadeh, N.; Ross, I. M.; Nishi, K.; Takemasa, K.; Sugawara, M.; Peyvast, Negin; Childs, D. T. D.; Hogg, R. A.
2018-02-01
We simulate the shape of the density of states (DoS) of the quantum dot (QD) ensemble based upon size information provided by high angle annular dark field scanning transmission electron microscopy (HAADF STEM). We discuss how the capability to determined the QD DoS from micro-structural data allows a MonteCarlo model to be developed to accurately describe the QD gain and spontaneous emission spectra. The QD DoS shape is then studied, with recommendations made via the effect of removing, and enhancing this size inhomogeneity on various QD based devices is explored.
NASA Astrophysics Data System (ADS)
Liou, L. L.; Jenkins, T.; Huang, C. I.
1997-06-01
The d.c. power limitation of a conventional HBT with dot geometry was studied theoretically using combined electro-thermal and transmission line models. In most cases, the thermal runaway occurs at a power level lower than that set by the intrinsic electronic property of the device. The dependence of the d.c. thermal runaway threshold power density, Pmax, on the emitter dot radius and emitter ballast resistance was calculated. Increasing emitter dot radius lowers Pmax. Although ballast resistance increases Pmax, the effect reduces as the emitter dot radius increases. This is caused by the non-uniform potential distribution in the base layer. When thermal runaway is considered, the nonuniform base-emitter potential offsets the improvement of the power handling capability by the physical ballast resistance. Conventional HBTs with a large radius (greater than 4 μm) exhibit a small Pmax caused by thermal effect. This threshold power density can be increased drastically by using the thermal shunt technique.
On the Surprising Salience of Curvature in Grouping by Proximity
ERIC Educational Resources Information Center
Strother, Lars; Kubovy, Michael
2006-01-01
The authors conducted 3 experiments to explore the roles of curvature, density, and relative proximity in the perceptual organization of ambiguous dot patterns. To this end, they developed a new family of regular dot patterns that tend to be perceptually grouped into parallel contours, dot-sampled structured grids (DSGs). DSGs are similar to the…
Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)
NASA Astrophysics Data System (ADS)
Wang, Z. M.; Holmes, K.; Mazur, Yu. I.; Salamo, G. J.
2004-03-01
Nanostructure evolution during the growth of multilayers of In0.5Ga0.5As/GaAs (100) by molecular-beam epitaxy is investigated to control the formation of lines of quantum dots called quantum-dot chains. It is found that the dot chains can be substantially increased in length by the introduction of growth interruptions during the initial stages of growth of the GaAs spacer layer. Quantum-dot chains that are longer than 5 μm are obtained by adjusting the In0.5Ga0.5As coverage and growth interruptions. The growth procedure is also used to create a template to form InAs dots into chains with a predictable dot density. The resulting dot chains offer the possibility to engineer carrier interaction among dots for novel physical phenomena and potential devices.
Attachment of Quantum Dots on Zinc Oxide Nanorods
NASA Astrophysics Data System (ADS)
Seay, Jared; Liang, Huan; Harikumar, Parameswar
2011-03-01
ZnO nanorods grown by hydrothermal technique are of great interest for potential applications in photovoltaic and optoelectronic devices. In this study we investigate the optimization of the optical absorption properties by a low temperature, chemical bath deposition technique. Our group fabricated nanorods on indium tin oxide (ITO) substrate with precursor solution of zinc nitrate hexahydrate and hexamethylenetramine (1:1 molar ratio) at 95C for 9 hours. In order to optimize the light absorption characteristics of ZnO nanorods, CdSe/ZnS core-shell quantum dots (QDs) of various diameters were attached to the surface of ZnO nanostructures grown on ITO and gold-coated silicon substrates. Density of quantum dots was varied by controlling the number drops on the surface of the ZnO nanorods. For a 0.1 M concentration of QDs of 10 nm diameter, the PL intensity at 385 nm increased as the density of the quantum dots on ZnO nanostructures was increased. For quantum dots at 1 M concentration, the PL intensity at 385 nm increased at the beginning and then decreased at higher density. We will discuss the observed changes in PL intensity with QD concentration with ZnO-QD band structure and recombination-diffusion processes taking place at the interface.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Paul, Matthias, E-mail: m.paul@ihfg.uni-stuttgart.de; Kettler, Jan; Zeuner, Katharina
By metal-organic vapor-phase epitaxy, we have fabricated InGaAs quantum dots on GaAs substrate with an ultra-low lateral density (<10{sup 7} cm{sup −2}). The photoluminescence emission from the quantum dots is shifted to the telecom O-band at 1.31 μm by an InGaAs strain reducing layer. In time-resolved measurements, we find fast decay times for exciton (∼600 ps) and biexciton (∼300 ps). We demonstrate triggered single-photon emission (g{sup (2)}(0)=0.08) as well as cascaded emission from the biexciton decay. Our results suggest that these quantum dots can compete with their counterparts grown by state-of-the-art molecular beam epitaxy.
Hybrid InGaAs quantum well-dots nanostructures for light-emitting and photo-voltaic applications.
Mintairov, S A; Kalyuzhnyy, N A; Lantratov, V M; Maximov, M V; Nadtochiy, A M; Rouvimov, Sergei; Zhukov, A E
2015-09-25
Hybrid quantum well-dots (QWD) nanostructures have been formed by deposition of 7-10 monolayers of In0.4Ga0.6As on a vicinal GaAs surface using metal-organic chemical vapor deposition. Transmission electron microscopy, photoluminescence and photocurrent analysis have shown that such structures represent quantum wells comprising three-dimensional (quantum dot-like) regions of two kinds. At least 20 QWD layers can be deposited defect-free providing high gain/absorption in the 0.9-1.1 spectral interval. Use of QWD media in a GaAs solar cell resulted in a photocurrent increment of 3.7 mA cm(-2) for the terrestrial spectrum and by 4.1 mA cm(-2) for the space spectrum. Diode lasers based on QWD emitting around 1.1 μm revealed high saturated gain and low transparency current density of about 15 cm(-1) and 37 A cm(-2) per layer, respectively.
High-pressure Infrared Spectra of Tal and Lawsonite
DOE Office of Scientific and Technical Information (OSTI.GOV)
Scott,H.; Liu, Z.; Hemley, R.
2007-01-01
We present high-pressure infrared spectra of two geologically important hydrous minerals: talc, Mg3Si4O10(OH)2 and lawsonite, CaAl2Si2O7(OH)2{center_dot}H2O,{center_dot}at room temperature. For lawsonite, our data span the far infrared region from 150 to 550 cm-1 and extend to 25 GPa. We combine our new spectroscopic data with previously published high-pressure mid-infrared and Raman data to constrain the Gr{umlt u}neisen parameter and vibrational density of states under pressure. In the case of talc, we present high-pressure infrared data that span both the mid and far infrared from 150 to 3800 cm-1 covering lattice, silicate, and hydroxyl stretching vibrations to a maximum pressure of 30more » GPa. Both phases show remarkable metastability well beyond their nominal maximum thermodynamic stability at simultaneous high-pressure and high-temperature conditions.« less
Controllable growth of GeSi nanostructures by molecular beam epitaxy
NASA Astrophysics Data System (ADS)
Ma, Yingjie; Zhou, Tong; Zhong, Zhenyang; Jiang, Zuimin
2018-06-01
We present an overview on the recent progress achieved on the controllable growth of diverse GeSi alloy nanostructures by molecular beam epitaxy. Prevailing theories for controlled growth of Ge nanostructures on patterned as well as inclined Si surfaces are outlined firstly, followed by reviews on the preferential growth of Ge nanoislands on patterned Si substrates, Ge nanowires and high density nanoislands grown on inclined Si surfaces, and the readily tunable Ge nanostructures on Si nanopillars. Ge nanostructures with controlled geometries, spatial distributions and densities, including two-dimensional ordered nanoislands, three-dimensional ordered quantum dot crystals, ordered nanorings, coupled quantum dot molecules, ordered nanowires and nanopillar alloys, are discussed in detail. A single Ge quantum dot-photonic crystal microcavity coupled optical emission device demonstration fabricated by using the preferentially grown Ge nanoisland technique is also introduced. Finally, we summarize the current technology status with a look at the future development trends and application challenges for controllable growth of Ge nanostructures. Project supports by the Natural Science Foundation of China (Nos. 61605232, 61674039) and the Open Research Project of State Key Laboratory of Surface Physics from Fudan University (Nos. KF2016_15s, KF2017_05).
Tan, Qiang; Zhu, Haiyan; Guo, Shengwu; Chen, Yuanzhen; Jiang, Tao; Shu, Chengyong; Chong, Shaokun; Hultman, Benjamin; Liu, Yongning; Wu, Gang
2017-08-31
Deactivation of an anode catalyst resulting from the poisoning of CO ad -like intermediates is one of the major problems for methanol and ethanol electro-oxidation reactions (MOR & EOR), and remains a grand challenge towards achieving high performance for direct alcohol fuel cells (DAFCs). Herein, we report a new approach for the preparation of ultrafine cobalt-doped CeO 2 dots (Co-CeO 2 , d = 3.6 nm), which can be an effective anti-poisoning promoter for Pd catalysts towards MOR and EOR in alkaline media. Compared to Pd/CeO 2 and pure Pd, the hybrid Pd/Co-CeO 2 nanocomposite catalyst exhibited a much enhanced activity and remarkable anti-poisoning ability for both MOR and EOR. The nanocomposite catalyst showed much higher mass activity (4×) than a state-of-the-art PtRu catalyst. The promotional mechanism was elucidated using extensive characterization and density-functional theory (DFT). A bifunctional effect of the Co-CeO 2 dots was discovered to be due to (i) an enhanced electronic interaction between Co-CeO 2 and Pd dots and (ii) the increased oxygen storage capacity of Co-CeO 2 dots to facilitate the oxidation of CO ad . Therefore, the Pd/Co-CeO 2 nanocomposite appears to be a promising catalyst for advanced DAFCs with low cost and high performance.
Miao, Qingyuan; Yang, Ziyi; Dong, Jianji; He, Ping-An; Huang, Dexiu
2018-02-05
The influences of dot material component, barrier material component, aspect ratio and carrier density on the refractive index changes of TE mode and TM mode of columnar quantum dot are analyzed, and a multiparameter adjustment method is proposed to realize low polarization dependence of refractive index change. Then the quantum dots with low polarization dependence of refractive index change (<1.5%) within C-band (1530 nm - 1565 nm) are designed, and it shows that quantum dots with different material parameters are anticipated to have similar characteristics of low polarization dependence.
Phonon impact on optical control schemes of quantum dots: Role of quantum dot geometry and symmetry
NASA Astrophysics Data System (ADS)
Lüker, S.; Kuhn, T.; Reiter, D. E.
2017-12-01
Phonons strongly influence the optical control of semiconductor quantum dots. When modeling the electron-phonon interaction in several theoretical approaches, the quantum dot geometry is approximated by a spherical structure, though typical self-assembled quantum dots are strongly lens-shaped. By explicitly comparing simulations of a spherical and a lens-shaped dot using a well-established correlation expansion approach, we show that, indeed, lens-shaped dots can be exactly mapped to a spherical geometry when studying the phonon influence on the electronic system. We also give a recipe to reproduce spectral densities from more involved dots by rather simple spherical models. On the other hand, breaking the spherical symmetry has a pronounced impact on the spatiotemporal properties of the phonon dynamics. As an example we show that for a lens-shaped quantum dot, the phonon emission is strongly concentrated along the direction of the smallest axis of the dot, which is important for the use of phonons for the communication between different dots.
Dermoscopic clues to distinguish trichotillomania from patchy alopecia areata.
Abraham, Leonardo Spagnol; Torres, Fernanda Nogueira; Azulay-Abulafia, Luna
2010-01-01
Trichotillomania and patchy alopecia areata have similar clinical and dermoscopic features. In trichotillomania, dermoscopy shows decreased hair density, short vellus hair, broken hairs with different shaft lengths, coiled hairs, short vellus hair, trichoptilosis, sparse yellow dots, which may or may not contain black dots and no exclamation mark hairs. In the case of patchy alopecia and broken hairs, the absence of exclamation mark hairs suggests a diagnosis of trichotillomania. On the other hand, the finding of yellow dots without black dots does not exclude it.
Quantum-dot cellular automata: Review and recent experiments (invited)
NASA Astrophysics Data System (ADS)
Snider, G. L.; Orlov, A. O.; Amlani, I.; Zuo, X.; Bernstein, G. H.; Lent, C. S.; Merz, J. L.; Porod, W.
1999-04-01
An introduction to the operation of quantum-dot cellular automata is presented, along with recent experimental results. Quantum-dot cellular automata (QCA) is a transistorless computation paradigm that addresses the issues of device density and interconnection. The basic building blocks of the QCA architecture, such as AND, OR, and NOT are presented. The experimental device is a four-dot QCA cell with two electrometers. The dots are metal islands, which are coupled by capacitors and tunnel junctions. An improved design of the cell is presented in which all four dots of the cell are coupled by tunnel junctions. The operation of this basic cell is confirmed by the externally controlled polarization change of the cell.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kuipers, Jeroen; Boer, Pascal de; Giepmans, Ben N.G., E-mail: b.n.g.giepmans@umcg.nl
Scanning electron microscopy (SEM) is increasing its application in life sciences for electron density measurements of ultrathin sections. These are traditionally analyzed with transmission electron microscopy (TEM); by most labs, SEM analysis still is associated with surface imaging only. Here we report several advantages of SEM for thin sections over TEM, both for structural inspection, as well as analyzing immuno-targeted labels such as quantum dots (QDs) and gold, where we find that QD-labeling is ten times more efficient than gold-labeling. Furthermore, we find that omitting post-staining with uranyl and lead leads to QDs readily detectable over the ultrastructure, but undermore » these conditions ultrastructural contrast was even almost invisible in TEM examination. Importantly, imaging in SEM with STEM detection leads to both outstanding QDs and ultrastructural contrast. STEM imaging is superior over back-scattered electron imaging of these non-contrasted samples, whereas secondary electron detection cannot be used at all. We conclude that examination of ultrathin sections by SEM, which may be immunolabeled with QDs, will allow rapid and straightforward analysis of large fields with more efficient labeling than can be achieved with immunogold. The large fields of view routinely achieved with SEM, but not with TEM, allows straightforward raw data sharing using virtual microscopy, also known as nanotomy when this concerns EM data in the life sciences. - Highlights: • High resolution and large fields of view via nanotomy or virtual microscopy. • Highly relevant for EM‐datasets where information density is high. • Sample preparation with low contrast good for STEM, not TEM. • Quantum dots now stand out in STEM‐based detection. • 10 Times more efficient labeling with quantum dots compared to gold.« less
NASA Astrophysics Data System (ADS)
Dong, Xiaofei; Xu, Jianping; Shi, Shaobo; Zhang, Xiaosong; Li, Lan; Yin, Shougen
2017-05-01
We report tunable electroluminescence (EL) from solution-processed ZnCuInS/ZnS (ZCIS/ZnS) quantum dots (QDs)/poly(9-vinlycarbazole) multilayer films. The EL spectra exhibit a red shift as the QD layer thickness increases. By analyzing the dependence of the applied voltage and the ZCIS/ZnS QD layer thickness on the EL spectra, the origin of the red shift is associated with the increased trap density of QDs that induces the injected electrons to be trapped in the deep donor level. The current conduction mechanism based on the current density-voltage curves at different voltage regions was discussed.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Pan Yi; Buonanno, Alessandra; McWilliams, Sean T.
2008-01-15
We compare waveforms obtained by numerically evolving nonspinning binary black holes to post-Newtonian (PN) template families currently used in the search for gravitational waves by ground-based detectors. We find that the time-domain 3.5PN template family, which includes the inspiral phase, has fitting factors (FFs) {>=}0.96 for binary systems with total mass M=10-20M{sub {center_dot}}. The time-domain 3.5PN effective-one-body template family, which includes the inspiral, merger, and ring-down phases, gives satisfactory signal-matching performance with FFs {>=}0.96 for binary systems with total mass M=10-120M{sub {center_dot}}. If we introduce a cutoff frequency properly adjusted to the final black-hole ring-down frequency, we find that themore » frequency-domain stationary-phase-approximated template family at 3.5PN order has FFs {>=}0.96 for binary systems with total mass M=10-20M{sub {center_dot}}. However, to obtain high matching performances for larger binary masses, we need to either extend this family to unphysical regions of the parameter space or introduce a 4PN order coefficient in the frequency-domain gravitational wave (GW) phase. Finally, we find that the phenomenological Buonanno-Chen-Vallisneri family has FFs {>=}0.97 with total mass M=10-120M{sub {center_dot}}. The main analyses use the noise-spectral density of LIGO, but several tests are extended to VIRGO and advanced LIGO noise-spectral densities.« less
Flux density calibration in diffuse optical tomographic systems.
Biswas, Samir Kumar; Rajan, Kanhirodan; Vasu, Ram M
2013-02-01
The solution of the forward equation that models the transport of light through a highly scattering tissue material in diffuse optical tomography (DOT) using the finite element method gives flux density (Φ) at the nodal points of the mesh. The experimentally measured flux (Umeasured) on the boundary over a finite surface area in a DOT system has to be corrected to account for the system transfer functions (R) of various building blocks of the measurement system. We present two methods to compensate for the perturbations caused by R and estimate true flux density (Φ) from Umeasuredcal. In the first approach, the measurement data with a homogeneous phantom (Umeasuredhomo) is used to calibrate the measurement system. The second scheme estimates the homogeneous phantom measurement using only the measurement from a heterogeneous phantom, thereby eliminating the necessity of a homogeneous phantom. This is done by statistically averaging the data (Umeasuredhetero) and redistributing it to the corresponding detector positions. The experiments carried out on tissue mimicking phantom with single and multiple inhomogeneities, human hand, and a pork tissue phantom demonstrate the robustness of the approach.
Highly Fluorescent Noble Metal Quantum Dots
Zheng, Jie; Nicovich, Philip R.; Dickson, Robert M.
2009-01-01
Highly fluorescent, water-soluble, few-atom noble metal quantum dots have been created that behave as multi-electron artificial atoms with discrete, size-tunable electronic transitions throughout the visible and near IR. These “molecular metals” exhibit highly polarizable transitions and scale in size according to the simple relation, Efermi/N1/3, predicted by the free electron model of metallic behavior. This simple scaling indicates that fluorescence arises from intraband transitions of free electrons and that these conduction electron transitions are the low number limit of the plasmon – the collective dipole oscillations occurring when a continuous density of states is reached. Providing the “missing link” between atomic and nanoparticle behavior in noble metals, these emissive, water-soluble Au nanoclusters open new opportunities for biological labels, energy transfer pairs, and light emitting sources in nanoscale optoelectronics. PMID:17105412
NASA Astrophysics Data System (ADS)
Snider, Gregory
2000-03-01
Quantum-dot Cellular Automata (QCA) [1] is a promising architecture which employs quantum dots for digital computation. It is a revolutionary approach that holds the promise of high device density and low power dissipation. A basic QCA cell consists of four quantum dots coupled capacitively and by tunnel barriers. The cell is biased to contain two excess electrons within the four dots, which are forced to opposite "corners" of the four-dot cell by mutual Coulomb repulsion. These two possible polarization states of the cell will represent logic "0" and "1". Properly arranged, arrays of these basic cells can implement Boolean logic functions. Experimental results from functional QCA devices built of nanoscale metal dots defined by tunnel barriers will be presented. The experimental devices to be presented consist of Al islands, which we will call quantum dots, interconnected by tunnel junctions and lithographically defined capacitors. Aluminum/ aluminum-oxide/aluminum tunnel junctions were fabricated using a standard e-beam lithography and shadow evaporation technique. The experiments were performed in a dilution refrigerator at a temperature of 70 mK. The operation of a cell is evaluated by direct measurements of the charge state of dots within a cell as the input voltage is changed. The experimental demonstration of a functioning cell will be presented. A line of three cells demonstrates that there are no metastable switching states in a line of cells. A QCA majority gate will also be presented, which is a programmable AND/OR gate and represents the basic building block of QCA systems. The results of recent experiments will be presented. 1. C.S. Lent, P.D. Tougaw, W. Porod, and G.H. Bernstein, Nanotechnology, 4, 49 (1993).
Processive movement of single kinesins on crowded microtubules visualized using quantum dots
Seitz, Arne; Surrey, Thomas
2006-01-01
Kinesin-1 is a processive molecular motor transporting cargo along microtubules. Inside cells, several motors and microtubule-associated proteins compete for binding to microtubules. Therefore, the question arises how processive movement of kinesin-1 is affected by crowding on the microtubule. Here we use total internal reflection fluorescence microscopy to image in vitro the runs of single quantum dot-labelled kinesins on crowded microtubules under steady-state conditions and to measure the degree of crowding on a microtubule at steady-state. We find that the runs of kinesins are little affected by high kinesin densities on a microtubule. However, the presence of high densities of a mutant kinesin that is not able to step efficiently reduces the average speed of wild-type kinesin, while hardly changing its processivity. This indicates that kinesin waits in a strongly bound state on the microtubule when encountering an obstacle until the obstacle unbinds and frees the binding site for kinesin's next step. A simple kinetic model can explain quantitatively the behaviour of kinesin under both crowding conditions. PMID:16407972
NASA Technical Reports Server (NTRS)
Khazanov, G. V.; Gamayunov, K. V.; Gallagher, D. L.; Kozyra, J. U.; Liemohn, M. W.
2007-01-01
This paper continues presentation and discussion of the results from our new global self-consistent theoretical model of interacting ring current ions and propagating electromagnetic ion cyclotron waves [Khazanov et al., 2006]. To study the effects of electromagnetic ion cyclotron wave propagation and refraction on the wave induced ring current precipitation and heating of the thermal plasmaspheric electrons, we simulate the May 1998 storm. The main findings after a simulation can be summarized as follows. Firstly, the wave induced ring current precipitation exhibits quite a lot of fine structure, and is highly organized by location of the plasmapause gradient. The strongest fluxes of about 4 x 10(exp 6) (cm(raised dot) s(raised dot) sr(raised dot) (sup -1)) are observed during the maill and early recovery phases of the storm. The very interesting and probably more important finding is that in a number of cases the most intense precipitating fluxes are not connected to the most intense waves in simple manner. The characteristics of the wave power spectral density distribution over the wave normal angle are extremely crucial for the effectiveness of the ring current ion scattering. Secondly, comparison of the global proton precipitating patterns with the results from RAM [Kozyra et al., 1997a] reveals that although we observe a qualitative agreement between the localizations of the wave induced precipitations in the models, there is no quantitative agreement between the magnitudes of the fluxes. The quantitative differences are mainly due to a qualitative difference between the characteristics of the wave power spectral density distributions over the wave normal angle in RAM and in our model. Thirdly, the heat fluxes to plasmaspheric electrons caused by Landau resonate energy absorption from electromagnetic ion cyclotron waves are observed in the postnoon-premidnight MLT sector, and can reach the magnitude of 10(exp 11) eV/(cm(sup 2)(raised dot)s). The Coulomb energy degradation of the RC H(+) and O(+) ions maximizes at about 10(exp 11) (eV/(cm(sup 2) (raised dot) s), and typically leads to electron energy deposition rates of about 2(raised dot) 10(exp 10) (eV/(cm(sup 2)(raised dot)s) which are observed during two periods; 32-48 hours, and 76-86 hours after 1 May, 0000 UT. The theoretically derived spatial structure of the thermal electron heating caused by interaction of the ring current with the plasmasphere is strongly supported by concurrent and conjugate plasma measurements from the plasmasphere, ring current, and topside ionosphere [Gurgiolo et al., 2005]. Finally, the wave induced intense electron heating has a structure of the spot-like patches along the most enhanced density gradients in the plasmasphere boundary layer and can be a possible driver to the observed but still not explained small-scale structures of enhanced emissions in the stable auroral red arcs.
NASA Astrophysics Data System (ADS)
Mintairov, A. M.; Kapaldo, J.; Merz, J. L.; Rouvimov, S.; Lebedev, D. V.; Kalyuzhnyy, N. A.; Mintairov, S. A.; Belyaev, K. G.; Rakhlin, M. V.; Toropov, A. A.; Brunkov, P. N.; Vlasov, A. S.; Zadiranov, Yu. M.; Blundell, S. A.; Mozharov, A. M.; Mukhin, I.; Yakimov, M.; Oktyabrsky, S.; Shelaev, A. V.; Bykov, V. A.
2018-05-01
Structural and emission properties of few-electron In(Ga)P/GaInP quantum dots (QDs) representing natural Wigner molecules (WM) and whispering gallery mode (WGM) electron (e ) cavities have been investigated. QD structures were grown using self-organized metal-organic vapor phase epitaxy and deposition from ˜3 to 7 monolayers of InP at 700 °C. Using atomic force microscopy, transmission electron microscopy, near-field scanning optical microscopy (NSOM), and μ -photoluminescence (μ -PL) spectra we obtained In(Ga)P/GaInP QDs having lateral size 80-180 nm, height 5-30 nm, Ga content 0.0-0.4, density 2 -10 μm-2 , and electron population up to 20 and demonstrated control of their density and size distribution. Using high-spatial-resolution low-temperature PL spectra, NSOM imaging, and calculations of charge density distributions we observed Wigner localization and e -cavity effects for a series of dots having quantum confinement ℏ ω0=0.5 -6 meV . We used these data together with time-resolved PL measurements to clarify the effect of Coulomb interaction and WM formation on emission spectra of few-electron QDs. We present direct observation of 2 e , 6 e , and 9 e WMs; 2 e and 4 e WGMs; and Fabry-Perot e modes and establish conditions of e -WGM-cavity formation in these QDs.
Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy
Wang, L; Kiravittaya, S; Songmuang, R; Schmidt, OG; Krause, B; Metzger, TH
2006-01-01
We report on the growth and characterization of lateral InAs/GaAs (001) quantum-dot molecules (QDMs) suitable for single QDM optical spectroscopy. The QDMs, forming by depositing InAs on GaAs surfaces with self-assembled nanoholes, are aligned along the [] direction. The relative number of isolated single quantum dots (QDs) is substantially reduced by performing the growth on GaAs surfaces containing stepped mounds. Surface morphology and X-ray measurements suggest that the strain produced by InGaAs-filled nanoholes superimposed to the strain relaxation at the step edges are responsible for the improved QDM properties. QDMs are Ga-richer compared to single QDs, consistent with strain- enhanced intermixing. The high optical quality of single QDMs is probed by micro-photoluminescence spectroscopy in samples with QDM densities lower than 108 cm−2.
T-Nb2O5 quantum dots prepared by electrodeposition for fast Li ion intercalation/deintercalation
NASA Astrophysics Data System (ADS)
Zhao, Guangyu; Ye, Chen; Zhang, Li; Li, Changle; Sun, Kening
2017-05-01
T-Nb2O5 quantum dots were electrodeposited on Ti nanorod arrays to prepare Ti@T-Nb2O5 core-shell array electrodes. The particle size of T-Nb2O5 could be manipulated by adjusting the depositing current density, and quantum dots several nanometers in size could be obtained at a deposition current of 6 mA cm-2. Benefiting from the ultra-small particle size of T-Nb2O5 and the array structure, Ti@T-Nb2O5 nanorod arrays exhibited good rate capability and durability when used as self-supported Li ion battery anodes. The arrays possessed capacities of 350 and 70 mAh g-1 at rate currents of 0.06 and 30 A g-1, respectively. Furthermore, the electrodes maintained 500 cycles without obvious decay at a high rate current of 30 A g-1.
A neurophysiological explanation for biases in visual localization.
Moreland, James C; Boynton, Geoffrey M
2017-02-01
Observers show small but systematic deviations from equal weighting of all elements when asked to localize the center of an array of dots. Counter-intuitively, with small numbers of dots drawn from a Gaussian distribution, this bias results in subjects overweighting the influence of outlier dots - inconsistent with traditional statistical estimators of central tendency. Here we show that this apparent statistical anomaly can be explained by the observation that outlier dots also lie in regions of lower dot density. Using a standard model of V1 processing, which includes spatial integration followed by a compressive static nonlinearity, we can successfully predict the finding that dots in less dense regions of an array have a relatively greater influence on the perceived center.
NASA Astrophysics Data System (ADS)
Barrios, M. A.; Liedahl, D. A.; Schneider, M. B.; Jones, O.; Brown, G. V.; Regan, S. P.; Fournier, K. B.; Moore, A. S.; Ross, J. S.; Landen, O.; Kauffman, R. L.; Nikroo, A.; Kroll, J.; Jaquez, J.; Huang, H.; Hansen, S. B.; Callahan, D. A.; Hinkel, D. E.; Bradley, D.; Moody, J. D.
2016-05-01
The first measurement of the electron temperature (Te) inside a National Ignition Facility hohlraum is obtained using temporally resolved K-shell X-ray spectroscopy of a mid-Z tracer dot. Both isoelectronic- and interstage-line ratios are used to calculate the local Te via the collisional-radiative atomic physics code SCRAM [Hansen et al., High Energy Density Phys 3, 109 (2007)]. The trajectory of the mid-Z dot as it is ablated from the capsule surface and moves toward the laser entrance hole (LEH) is measured using side-on x-ray imaging, characterizing the plasma flow of the ablating capsule. Data show that the measured dot location is farther away from the LEH in comparison to the radiation-hydrodynamics simulation prediction using HYDRA [Marinak et al., Phys. Plasmas 3, 2070 (1996)]. To account for this discrepancy, the predicted simulation Te is evaluated at the measured dot trajectory. The peak Te, measured to be 4.2 keV ± 0.2 keV, is ˜0.5 keV hotter than the simulation prediction.
Infra-red photoresponse of mesoscopic NiO-based solar cells sensitized with PbS quantum dot
Raissi, Mahfoudh; Pellegrin, Yann; Jobic, Stéphane; Boujtita, Mohammed; Odobel, Fabrice
2016-01-01
Sensitized NiO based photocathode is a new field of investigation with increasing scientific interest in relation with the development of tandem dye-sensitized solar cells (photovoltaic) and dye-sensitized photoelectrosynthetic cells (solar fuel). We demonstrate herein that PbS quantum dots (QDs) represent promising inorganic sensitizers for NiO-based quantum dot-sensitized solar cells (QDSSCs). The solar cell sensitized with PbS quantum dot exhibits significantly higher photoconversion efficiency than solar cells sensitized with a classical and efficient molecular sensitizer (P1 dye = 4-(Bis-{4-[5-(2,2-dicyano-vinyl)-thiophene-2-yl]-phenyl}-amino)-benzoic acid). Furthermore, the system features an IPCE (Incident Photon-to-Current Efficiency) spectrum that spreads into the infra-red region, reaching operating wavelengths of 950 nm. The QDSSC photoelectrochemical device works with the complexes tris(4,4′-ditert-butyl-2,2′-bipyridine)cobalt(III/II) redox mediators, underscoring the formation of a long-lived charge-separated state. The electrochemical impedance spectrocopy measurements are consistent with a high packing of the QDs upon the NiO surface, the high density of which limits the access of the electrolyte and results in favorable light absorption cross-sections and a significant hole lifetime. These notable results highlight the potential of NiO-based photocathodes sensitized with quantum dots for accessing and exploiting the low-energy part of the solar spectrum in photovoltaic and photocatalysis applications. PMID:27125454
Properties of strong-coupling magneto-bipolaron qubit in quantum dot under magnetic field
NASA Astrophysics Data System (ADS)
Xu-Fang, Bai; Ying, Zhang; Wuyunqimuge; Eerdunchaolu
2016-07-01
Based on the variational method of Pekar type, we study the energies and the wave-functions of the ground and the first-excited states of magneto-bipolaron, which is strongly coupled to the LO phonon in a parabolic potential quantum dot under an applied magnetic field, thus built up a quantum dot magneto-bipolaron qubit. The results show that the oscillation period of the probability density of the two electrons in the qubit decreases with increasing electron-phonon coupling strength α, resonant frequency of the magnetic field ω c, confinement strength of the quantum dot ω 0, and dielectric constant ratio of the medium η the probability density of the two electrons in the qubit oscillates periodically with increasing time t, angular coordinate φ 2, and dielectric constant ratio of the medium η the probability of electron appearing near the center of the quantum dot is larger, and the probability of electron appearing away from the center of the quantum dot is much smaller. Project supported by the Natural Science Foundation of Hebei Province, China (Grant No. E2013407119) and the Items of Institution of Higher Education Scientific Research of Hebei Province and Inner Mongolia, China (Grant Nos. ZD20131008, Z2015149, Z2015219, and NJZY14189).
Raffy, Guillaume; Bofinger, Robin; Tron, Arnaud; Guerzo, André Del; McClenaghan, Nathan D; Vincent, Jean-Marc
2017-11-09
An innovative photopatterning process is described that allows, in a single laser-promoted operation, the covalent attachment of a molecule on a surface (2D patterning - xy dimensions) and its photopolymerization to grow micro-/nanostructures with spatial control in a third z-dimension. The surface patterning process, based on nitrene reactivity, was harnessed using the highly fluorescent azide-substituted boron difluoride dipyrromethene (BODIPY) 1 that was prepared in a single synthetic step from the parent pentafluorophenyl BODIPY on reacting with NaN 3 . Using the laser of a fluorescence microscope (375 nm or 532 nm) 1 could be grafted on adapted surfaces and then homopolymerised. In this study we show that using glass coverslips coated with PEG/high density alkyne groups (density of ∼1 × 10 14 per cm 2 ), the patterning process was much more spatially confined than when using PEG only coating. Varying the irradiation time (1 to 15 s) or laser power (0.14-3.53 μW) allowed variation of the amount of deposited BODIPY to afford, in the extreme case, pillars of a height up to 800 nm. AFM and MS studies revealed that the nano/microstructures were formed of particles of photopolymerized 1 having a mean diameter of ca. 30 nm. The emission spectra and fluorescence lifetimes for the patterned structures were measured, revealing a red-shift (from ∼560 nm up to 620 nm) of the maximum emission and a shortening (from ∼6 ns to 0.8 ns) of the fluorescence lifetimes in areas where the density of BODIPY is high. As an application of the patterning process, a figure formed of 136 dots/pillars was prepared. The confocal hyperspectral fluorescence image revealed that the figure is clearly resolved and constituted by highly photoluminescent red dots whose fluorescence intensities and emission color proved to be highly reproducible. SEM and AFM studies showed that the luminescent dots were pillars with a conical shape, an average height of 710 ± 28 nm and a FWHM of 400 ± 20 nm.
NASA Technical Reports Server (NTRS)
Leon, R.; Swift, G.; Magness, B.; Taylor, W.; Tang, Y.; Wang, K.; Dowd, P.; Zhang, Y.
2000-01-01
Successful implementation of technology using self-forming semiconductor Quantum Dots (QDs) has already demonstrated that temperature independent Dirac-delta density of states can be exploited in low current threshold QD lasers and QD infrared photodetectors.
2 Micrometers InAsSb Quantum-dot Lasers
NASA Technical Reports Server (NTRS)
Qiu, Yueming; Uhl, David; Keo, Sam
2004-01-01
InAsSb quantum-dot lasers near 2 micrometers were demonstrated in cw operation at room temperature with a threshold current density of 733 A,/cm(sup 2), output power of 3 mW/facet and a differential quantum efficiency of 13%.
NASA Astrophysics Data System (ADS)
Shi, Bei; Li, Qiang; Lau, Kei May
2018-05-01
Monolithic integration of InP on a Si platform ideally facilitates on-chip light sources in silicon photonic applications. In addition to the well-developed hybrid bonding techniques, the direct epitaxy method is spawning as a more strategic and potentially cost-effective approach to monolithically integrate InP-based telecom lasers. To minimize the unwanted defects within the InP crystal, we explore multiple InAs/InP quantum dots as dislocation filters. The high quality InP buffer is thus obtained, and the dislocation filtering effects of the quantum dots are directly examined via both plan-view and cross-sectional transmission electron microscopy, along with room-temperature photoluminescence. The defect density on the InP surface was reduced to 3 × 108/cm2, providing an improved optical property of active photonic devices on Si substrates. This work offers a novel solution to advance large-scale integration of InP on Si, which is beneficial to silicon-based long-wavelength lasers in telecommunications.
NASA Astrophysics Data System (ADS)
Shi, Wenqin; Eijt, Stephan W. H.; Suchand Sandeep, C. S.; Siebbeles, Laurens D. A.; Houtepen, Arjan J.; Kinge, Sachin; Brück, Ekkes; Barbiellini, Bernardo; Bansil, Arun
2016-02-01
Positron Two Dimensional Angular Correlation of Annihilation Radiation (2D-ACAR) measurements reveal modifications of the electronic structure and composition at the surfaces of PbSe quantum dots (QDs), deposited as thin films, produced by various ligands containing either oxygen or nitrogen atoms. In particular, the 2D-ACAR measurements on thin films of colloidal PbSe QDs capped with oleic acid ligands yield an increased intensity in the electron momentum density (EMD) at high momenta compared to PbSe quantum dots capped with oleylamine. Moreover, the EMD of PbSe QDs is strongly affected by the small ethylenediamine ligands, since these molecules lead to small distances between QDs and favor neck formation between near neighbor QDs, inducing electronic coupling between neighboring QDs. The high sensitivity to the presence of oxygen atoms at the surface can be also exploited to monitor the surface oxidation of PbSe QDs upon exposure to air. Our study clearly demonstrates that positron annihilation spectroscopy applied to thin films can probe surface transformations of colloidal semiconductor QDs embedded in functional layers.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ban, H. Y.; Kavuri, V. C., E-mail: venk@physics.up
Purpose: The authors introduce a state-of-the-art all-optical clinical diffuse optical tomography (DOT) imaging instrument which collects spatially dense, multispectral, frequency-domain breast data in the parallel-plate geometry. Methods: The instrument utilizes a CCD-based heterodyne detection scheme that permits massively parallel detection of diffuse photon density wave amplitude and phase for a large number of source–detector pairs (10{sup 6}). The stand-alone clinical DOT instrument thus offers high spatial resolution with reduced crosstalk between absorption and scattering. Other novel features include a fringe profilometry system for breast boundary segmentation, real-time data normalization, and a patient bed design which permits both axial and sagittalmore » breast measurements. Results: The authors validated the instrument using tissue simulating phantoms with two different chromophore-containing targets and one scattering target. The authors also demonstrated the instrument in a case study breast cancer patient; the reconstructed 3D image of endogenous chromophores and scattering gave tumor localization in agreement with MRI. Conclusions: Imaging with a novel parallel-plate DOT breast imager that employs highly parallel, high-resolution CCD detection in the frequency-domain was demonstrated.« less
Perspective: The future of quantum dot photonic integrated circuits
NASA Astrophysics Data System (ADS)
Norman, Justin C.; Jung, Daehwan; Wan, Yating; Bowers, John E.
2018-03-01
Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiencies of 87%, and output powers of 175 mW at 20 °C. 1500-h reliability tests at 35 °C showed an extrapolated mean-time-to-failure of more than ten million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with complementary metal-oxide-semiconductor (CMOS) foundries.
Amblyopic deficits in detecting a dotted line in noise.
Mussap, A J; Levi, D M
2000-01-01
We compared detectability of a dotted line masked by random-dot noise for the amblyopic versus non-amblyopic eye of two strabismic amblyopes. Small but consistent deficits in the amblyopic eye of these observers were found, and shown to be limited to dotted-line targets composed of greater than seven dots (with performance being normal for targets of less than seven dots). These deficits were unrelated to impaired visual acuity, impaired sensitivity to dot density, and differential positional uncertainty between the eyes of our observers. The deficits were also unlikely to be due to CSF losses due to abnormal low-spatial-frequency filters involved in detecting long chains of collinear dots. Instead, the results of simulations indicate that the inefficiency in utilising large numbers of dots is due to deficits of global, integrative processes in strabismic amblyopes. These simulations also show that while neither undersampling nor positional uncertainty of inputs into integrative processes can themselves account for the amblyopic deficits, if such abnormal inputs lead to the development of stunted integrative processes then impaired sensitivity to long chains of collinear dots is indeed predicted.
Role of bond adaptability in the passivation of colloidal quantum dot solids.
Thon, Susanna M; Ip, Alexander H; Voznyy, Oleksandr; Levina, Larissa; Kemp, Kyle W; Carey, Graham H; Masala, Silvia; Sargent, Edward H
2013-09-24
Colloidal quantum dot (CQD) solids are attractive materials for photovoltaic devices due to their low-cost solution-phase processing, high absorption cross sections, and their band gap tunability via the quantum size effect. Recent advances in CQD solar cell performance have relied on new surface passivation strategies. Specifically, cadmium cation passivation of surface chalcogen sites in PbS CQDs has been shown to contribute to lowered trap state densities and improved photovoltaic performance. Here we deploy a generalized solution-phase passivation strategy as a means to improving CQD surface management. We connect the effects of the choice of metal cation on solution-phase surface passivation, film-phase trap density of states, minority carrier mobility, and photovoltaic power conversion efficiency. We show that trap passivation and midgap density of states determine photovoltaic device performance and are strongly influenced by the choice of metal cation. Supported by density functional theory simulations, we propose a model for the role of cations, a picture wherein metals offering the shallowest electron affinities and the greatest adaptability in surface bonding configurations eliminate both deep and shallow traps effectively even in submonolayer amounts. This work illustrates the importance of materials choice in designing a flexible passivation strategy for optimum CQD device performance.
Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
Strom, NW; Wang, Zh M; AbuWaar, ZY; Mazur, Yu I; Salamo, GJ
2007-01-01
The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new QD morphologies that may find use in optoelectronic applications. Increased deposition of InAs on the GaAs ring first produced a QD in the hole followed by QDs around the GaAs ring and on the GaAs (100) surface. This behavior indicates that the QDs prefer to nucleate at locations of high monolayer (ML) step density.
NASA Astrophysics Data System (ADS)
Kourkoutis, Lena F.; Hao, Xiaojing; Huang, Shujuan; Puthen-Veettil, Binesh; Conibeer, Gavin; Green, Martin A.; Perez-Wurfl, Ivan
2013-07-01
All-Si tandem solar cells based on Si quantum dots (QDs) are a promising approach to future high-performance, thin film solar cells using abundant, stable and non-toxic materials. An important prerequisite to achieve a high conversion efficiency in such cells is the ability to control the geometry of the Si QD network. This includes the ability to control both, the size and arrangement of Si QDs embedded in a higher bandgap matrix. Using plasmon tomography we show the size, shape and density of Si QDs, that form in Si rich oxide (SRO)/SiO2 multilayers upon annealing, can be controlled by varying the SRO stoichiometry. Smaller, more spherical QDs of higher densities are obtained at lower Si concentrations. In richer SRO layers ellipsoidal QDs tend to form. Using electronic structure calculations within the effective mass approximation we show that ellipsoidal QDs give rise to reduced inter-QD coupling in the layer. Efficient carrier transport via mini-bands is in this case more likely across the multilayers provided the SiO2 spacer layer is thin enough to allow coupling in the vertical direction.All-Si tandem solar cells based on Si quantum dots (QDs) are a promising approach to future high-performance, thin film solar cells using abundant, stable and non-toxic materials. An important prerequisite to achieve a high conversion efficiency in such cells is the ability to control the geometry of the Si QD network. This includes the ability to control both, the size and arrangement of Si QDs embedded in a higher bandgap matrix. Using plasmon tomography we show the size, shape and density of Si QDs, that form in Si rich oxide (SRO)/SiO2 multilayers upon annealing, can be controlled by varying the SRO stoichiometry. Smaller, more spherical QDs of higher densities are obtained at lower Si concentrations. In richer SRO layers ellipsoidal QDs tend to form. Using electronic structure calculations within the effective mass approximation we show that ellipsoidal QDs give rise to reduced inter-QD coupling in the layer. Efficient carrier transport via mini-bands is in this case more likely across the multilayers provided the SiO2 spacer layer is thin enough to allow coupling in the vertical direction. Electronic supplementary information (ESI) available: Electron tomography reconstruction movies. See DOI: 10.1039/c3nr01998e
Kim, Jae-Kwan; Kim, Jun Young; Yoon, Jae-Sik; Lee, Ji-Myon
2013-10-01
The formation of nanometer-scale (ns)-Si dots and clusters on p-GaN layers has been studied by controlling the early stage of growth during plasma-enhanced chemical vapor deposition (PECVD) at room temperature. We found that ns-Si dots and clusters formed on the p-GaN surface, indicating that growth was the Volmer-Weber mode. The deposition parameters such as radio frequency (RF) power and processing time mainly influenced the size of the ns-Si dots (40 nm-160 nm) and the density of the ns-Si dot clusters.
Roy-Gobeil, Antoine; Miyahara, Yoichi; Grutter, Peter
2015-04-08
We present theoretical and experimental studies of the effect of the density of states of a quantum dot (QD) on the rate of single-electron tunneling that can be directly measured by electrostatic force microscopy (e-EFM) experiments. In e-EFM, the motion of a biased atomic force microscope cantilever tip modulates the charge state of a QD in the Coulomb blockade regime. The charge dynamics of the dot, which is detected through its back-action on the capacitavely coupled cantilever, depends on the tunneling rate of the QD to a back-electrode. The density of states of the QD can therefore be measured through its effect on the energy dependence of tunneling rate. We present experimental data on individual 5 nm colloidal gold nanoparticles that exhibit a near continuous density of state at 77 K. In contrast, our analysis of already published data on self-assembled InAs QDs at 4 K clearly reveals discrete degenerate energy levels.
NASA Astrophysics Data System (ADS)
Ilie, C. C.; Guzman, F.; Swanson, B. L.; Evans, I. R.; Costa, P. S.; Teeter, J. D.; Shekhirev, M.; Benker, N.; Sikich, S.; Enders, A.; Dowben, P. A.; Sinitskii, A.; Yost, A. J.
2018-05-01
Photoactive perovskite quantum dot films, deposited via an inkjet printer, have been characterized by x-ray diffraction and x-ray photoelectron spectroscopy. The crystal structure and bonding environment are consistent with CsPbBr3 perovskite quantum dots. The current–voltage (I–V) and capacitance–voltage (C–V) transport measurements indicate that the photo-carrier drift lifetime can exceed 1 ms for some printed perovskite films. This far exceeds the dark drift carrier lifetime, which is below 50 ns. The printed films show a photocarrier density 109 greater than the dark carrier density, making these printed films ideal candidates for application in photodetectors. The successful printing of photoactive-perovskite quantum dot films of CsPbBr3, indicates that the rapid prototyping of various perovskite inks and multilayers is realizable.
NASA Astrophysics Data System (ADS)
Cheng, Qifa; Xu, Jing; Wang, Tao; Fan, Ling; Ma, Ruifang; Yu, Xinzhi; Zhu, Jian; Xu, Zhi; Lu, Bingan
2017-11-01
Photoelectrocatalysis (PEC) has been demonstrated as a promising technique for hydrogen production. However, the high over-potential and high recombination rate of photo-induced electron-hole pairs lead to poor hydrogen production efficiency. In order to overcome these problems, TiO2 and Au dual quantum dots (QDs) on three-dimensional graphene flowers (Au@TiO2@3DGFs) was synthesized by an electro-deposition strategy. The combination of Au and TiO2 modulates the band gap of TiO2, shifts the absorption to visible lights and improves the utilization efficiency of solar light. Simultaneously, the size-quantization TiO2 on 3DGFs not only achieves a larger specific surface area over conventional nanomaterials, but also promotes the separation of the photo-induced electron-hole pairs. Besides, the 3DGFs as a scaffold for QDs can provide more active sites and stable structure. Thus, the newly-developed Au@TiO2@3DGFs composite exhibited an impressive PEC activity and excellent durability. Under -240 mV potential (vs. RHE), the photoelectric current density involved visible light illumination (100 mW cm-2) reached 90 mA cm-2, which was about 3.6 times of the natural current density (without light, only 25 mA cm-2). It worth noting that the photoelectric current density did not degrade and even increased to 95 mA cm-2 over 90 h irradiation, indicating an amazing chemical stability.
Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system
NASA Astrophysics Data System (ADS)
Pieczarka, M.; Syperek, M.; Biegańska, D.; Gilfert, C.; Pavelescu, E. M.; Reithmaier, J. P.; Misiewicz, J.; Sek, G.
2017-05-01
The lateral carrier diffusion process is investigated in coupled InGaAs/GaAs quantum dot-quantum well (QD-QW) structures by means of spatially resolved photoluminescence spectroscopy at low temperature. Under non-resonant photo-excitation above the GaAs bandgap, the lateral carrier transport reflected in the distorted electron-hole pair emission profiles is found to be mainly governed by high energy carriers created within the 3D density of states of GaAs. In contrast, for the case of resonant excitation tuned to the QW-like ground state of the QD-QW system, the emission profiles remain unaffected by the excess kinetic energy of carriers and local phonon heating within the pump spot. The lateral diffusion lengths are determined and present certain dependency on the coupling strength between QW and QDs. While for a strongly coupled structure the diffusion length is found to be around 0.8 μm and monotonically increases up to 1.4 μm with the excitation power density, in weakly coupled structures, it is determined to ca. 1.6 μm and remained virtually independent of the pumping power density.
Platinum assisted by carbon quantum dots for methanol electro-oxidation
NASA Astrophysics Data System (ADS)
Pan, Dan; Li, Xingwei; Zhang, Aofeng
2018-01-01
Various types of fuel cells as clean and portable power sources show a great attraction, especially direct methanol fuel cell (DMFC) having high energy density, low operating temperature and convenient fuel storage. However, the preparation of low-cost Pt-based catalysts with satisfactory catalytic performance still faces many challenges for its commercialization on large scale. Here, Pt catalysts assisted by carbon quantum dots (CQDs) are reported. The synergistic effect of carbon quantum dots and Pt metals is similar to a bi-component catalyst, such as PtRu. First, carbon quantum dots derived from Vulcan XC-72 carbon black are synthesized by mixed acid etching. Then, carbon black (Vulcan XC-72) is soaked in carbon quantum dots solution for several days to obtain carbon black modified by carbon quantum dots (XC-72-CQDs). Finally, Pt catalysts are supported on XC-72-CQDs (Pt/XC-72-CQDs) through a simple chemical reduction method. For methanol electro-oxidation reaction, the catalytic performance of Pt/XC-72-CQDs is compared with commercial PtRu/C (30% Pt + 15% Ru). Results show that a typical product (Pt/XC-72-CQDs5) exhibits a better catalytic activity than PtRu/C. In cyclic voltammetry test, the specific activity of Pt/XC-72-CQDs5 is 1.06 mA cm-2 Pt and 477.6 mA mg-1 Pt, while that of PtRu/C is 0.77 mA cm-2 Pt and 280.6 mA mg-1 Pt.
Satellitesimal Formation via Collisional Dust Growth in Steady Circumplanetary Disks
NASA Astrophysics Data System (ADS)
Shibaike, Yuhito; Okuzumi, Satoshi; Sasaki, Takanori; Ida, Shigeru
2017-09-01
The icy satellites around Jupiter are considered to have formed in a circumplanetary disk. While previous models have focused on the formation of the satellites starting from satellitesimals, the question of how satellitesimals themselves form from smaller dust particles has not yet been addressed. In this work, we study the possibility that satellitesimals form in situ in a circumplanetary disk. We calculate the radial distribution of the surface density and representative size of icy dust particles that grow by colliding with each other and drift toward the central planet in a steady circumplanetary disk with a continuous supply of gas and dust from the parent protoplanetary disk. The radial drift barrier is overcome if the ratio of the dust-to-gas accretion rates onto the circumplanetary disk, {\\dot{M}}{{d}}/{\\dot{M}}{{g}}, is high and the strength of turbulence, α, is not too low. The collision velocity is lower than the critical velocity of fragmentation when α is low. Taken together, we find that the conditions for satellitesimal formation via dust coagulation are given by {\\dot{M}}{{d}}/{\\dot{M}}{{g}}≥slant 1 and {10}-4≤slant α < {10}-2. The former condition is generally difficult to achieve, suggesting that the in situ satellitesimal formation via particle sticking is viable only under extreme conditions. We also show that neither satellitesimal formation via the collisional growth of porous aggregates nor via streaming instability is viable as long as {\\dot{M}}{{d}}/{\\dot{M}}{{g}} is low.
Centrifugally driven winds from protostellar accretion discs - I. Formulation and initial results
NASA Astrophysics Data System (ADS)
Nolan, C. A.; Salmeron, R.; Federrath, C.; Bicknell, G. V.; Sutherland, R. S.
2017-10-01
Protostellar discs play an important role in star formation, acting as the primary mass reservoir for accretion on to young stars and regulating the extent to which angular momentum and gas is released back into stellar nurseries through the launching of powerful disc winds. In this study, we explore how disc structure relates to the properties of the wind-launching region, mapping out the regions of protostellar discs where wind launching could be viable. We combine a series of 1.5D semi-analytic, steady-state, vertical disc-wind solutions into a radially extended 1+1.5D model, incorporating all three diffusion mechanisms (Ohm, Hall and ambipolar). We observe that the majority of mass outflow via disc winds occurs over a radial width of a fraction of an astronomical unit, with outflow rates attenuating rapidly on either side. We also find that the mass accretion rate, magnetic field strength and surface density profile each have significant effects on both the location of the wind-launching region and the ejection/accretion ratio \\dot{M}_out/\\dot{M}_in. Increasing either the accretion rate or the magnetic field strength corresponds to a shift of the wind-launching region to smaller radii and a decrease in \\dot{M}_out/\\dot{M}_in, while increasing the surface density corresponds to launching regions at larger radii with increased \\dot{M}_out/\\dot{M}_in. Finally, we discover a class of disc winds containing an ineffective launching configuration at intermediate radii, leading to two radially separated regions of wind launching and diminished \\dot{M}_out/\\dot{M}_in. We find that the wind locations and ejection/accretion ratio are consistent with current observational and theoretical estimates.
Negative differential conductance in InAs wire based double quantum dot induced by a charged AFM tip
DOE Office of Scientific and Technical Information (OSTI.GOV)
Zhukov, A. A., E-mail: azhukov@issp.ac.ru; Volk, Ch.; Winden, A.
We investigate the conductance of an InAs nanowire in the nonlinear regime in the case of low electron density where the wire is split into quantum dots connected in series. The negative differential conductance in the wire is initiated by means of a charged atomic force microscope tip adjusting the transparency of the tunneling barrier between two adjoining quantum dots. We confirm that the negative differential conductance arises due to the resonant tunneling between these two adjoining quantum dots. The influence of the transparency of the blocking barriers and the relative position of energy states in the adjoining dots onmore » a decrease of the negative differential conductance is investigated in detail.« less
Helicon wave field measurements in Proto-MPEX
NASA Astrophysics Data System (ADS)
Caneses, Juan Francisco; Piotrowicz, Pawel; Goulding, Richard; Caughman, John; Showers, Missy; Kafle, Nischal; Rapp, Juergen; Campbell, Ian; Proto-MPEX Team
2016-10-01
A high density Deuterium discharge (ne 5e19 m-3, Te 4 eV) has been recently observed in ProtoMPEX (Prototype Material Plasma Exposure eXperiment). The discharge (100 kW, 13.56 MHz, D2, 700 G at the source, 1e4 G at the Target) begins with a low density plasma with hollow Te profile and transitions in about 100 ms to a high density mode with flat Te profile. It is believed that the transition to the high density mode is produced by a ``helicon resonance'' as evidenced by the centrally-peaked power deposition profile observed with IR imaging on a 2 mm thick metallic target plate. In this work, we present b-dot probe measurements of the radial helicon wavefields 30 cm downstream of the antenna during both the low and high density modes. In addition, we compare the experimental results with full wave simulations. This manuscript has been authored by UT-Battelle, LLC, under Contract No. DE-AC05-00OR22725 with the U.S. Department of Energy.
Optimal and Local Connectivity Between Neuron and Synapse Array in the Quantum Dot/Silicon Brain
NASA Technical Reports Server (NTRS)
Duong, Tuan A.; Assad, Christopher; Thakoor, Anikumar P.
2010-01-01
This innovation is used to connect between synapse and neuron arrays using nanowire in quantum dot and metal in CMOS (complementary metal oxide semiconductor) technology to enable the density of a brain-like connection in hardware. The hardware implementation combines three technologies: 1. Quantum dot and nanowire-based compact synaptic cell (50x50 sq nm) with inherently low parasitic capacitance (hence, low dynamic power approx.l0(exp -11) watts/synapse), 2. Neuron and learning circuits implemented in 50-nm CMOS technology, to be integrated with quantum dot and nanowire synapse, and 3. 3D stacking approach to achieve the overall numbers of high density O(10(exp 12)) synapses and O(10(exp 8)) neurons in the overall system. In a 1-sq cm of quantum dot layer sitting on a 50-nm CMOS layer, innovators were able to pack a 10(exp 6)-neuron and 10(exp 10)-synapse array; however, the constraint for the connection scheme is that each neuron will receive a non-identical 10(exp 4)-synapse set, including itself, via its efficacy of the connection. This is not a fully connected system where the 100x100 synapse array only has a 100-input data bus and 100-output data bus. Due to the data bus sharing, it poses a great challenge to have a complete connected system, and its constraint within the quantum dot and silicon wafer layer. For an effective connection scheme, there are three conditions to be met: 1. Local connection. 2. The nanowire should be connected locally, not globally from which it helps to maximize the data flow by sharing the same wire space location. 3. Each synapse can have an alternate summation line if needed (this option is doable based on the simple mask creation). The 10(exp 3)x10(exp 3)-neuron array was partitioned into a 10-block, 10(exp 2)x10(exp 3)-neuron array. This building block can be completely mapped within itself (10,000 synapses to a neuron).
Zhao, Xiao; Li, Ming; Dong, Hanwu; Liu, Yingliang; Hu, Hang; Cai, Yijin; Liang, Yeru; Xiao, Yong; Zheng, Mingtao
2017-06-22
Interconnected 3 D nanosheet networks of reduced graphene oxide decorated with carbon dots (rGO/CDs) are successfully fabricated through a simple one-pot hydrothermal process. The as-prepared rGO/CDs present appropriate 3 D interconnectivity and abundant stable oxygen-containing functional groups, to which we can attribute the excellent electrochemical performance such as high specific capacitance, good rate capability, and great cycling stability. Employed as binder-free electrodes for supercapacitors, the resulting rGO/CDs exhibit excellent long-term cycling stability (ca. 92 % capacitance retention after 20 000 charge/discharge cycles at current density of 10 A g -1 ) as well as a maximum specific capacitance of about 308 F g -1 at current density of 0.5 A g -1 , which is much higher than that of rGO (200 F g -1 ) and CDs (2.2 F g -1 ). This work provides a promising strategy to fabricate graphene-based nanomaterials with greatly boosted electrochemical performances by decoration of with CDs. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Kourkoutis, Lena F; Hao, Xiaojing; Huang, Shujuan; Puthen-Veettil, Binesh; Conibeer, Gavin; Green, Martin A; Perez-Wurfl, Ivan
2013-08-21
All-Si tandem solar cells based on Si quantum dots (QDs) are a promising approach to future high-performance, thin film solar cells using abundant, stable and non-toxic materials. An important prerequisite to achieve a high conversion efficiency in such cells is the ability to control the geometry of the Si QD network. This includes the ability to control both, the size and arrangement of Si QDs embedded in a higher bandgap matrix. Using plasmon tomography we show the size, shape and density of Si QDs, that form in Si rich oxide (SRO)/SiO2 multilayers upon annealing, can be controlled by varying the SRO stoichiometry. Smaller, more spherical QDs of higher densities are obtained at lower Si concentrations. In richer SRO layers ellipsoidal QDs tend to form. Using electronic structure calculations within the effective mass approximation we show that ellipsoidal QDs give rise to reduced inter-QD coupling in the layer. Efficient carrier transport via mini-bands is in this case more likely across the multilayers provided the SiO2 spacer layer is thin enough to allow coupling in the vertical direction.
Photodeposition of Ag2S on TiO2 nanorod arrays for quantum dot-sensitized solar cells
2013-01-01
Ag2S quantum dots were deposited on the surface of TiO2 nanorod arrays by a two-step photodeposition. The prepared TiO2 nanorod arrays as well as the Ag2S deposited electrodes were characterized by X-ray diffraction, scanning electron microscope, and transmission electron microscope, suggesting a large coverage of Ag2S quantum dots on the ordered TiO2 nanorod arrays. UV–vis absorption spectra of Ag2S deposited electrodes show a broad absorption range of the visible light. The quantum dot-sensitized solar cells (QDSSCs) based on these electrodes were fabricated, and the photoelectrochemical properties were examined. A high photocurrent density of 10.25 mA/cm2 with a conversion efficiency of 0.98% at AM 1.5 solar light of 100 mW/cm2 was obtained with an optimal photodeposition time. The performance of the QDSSC at different incident light intensities was also investigated. The results display a better performance at a lower incident light level with a conversion efficiency of 1.25% at 47 mW/cm2. PMID:23286551
Visualization of Current and Mapping of Elements in Quantum Dot Solar Cells
Niezgoda, J. Scott; Ng, Amy; Poplawsky, Jonathan D.; ...
2015-12-17
The delicate influence of properties such as high surface state density and organic-inorganic boundaries on the individual quantum dot electronic structure complicates pursuits toward forming quantitative models of quantum dot thin films ab initio. Our report describes the application of electron beam-induced current (EBIC) microscopy to depleted-heterojunction colloidal quantum dot photovoltaics (DH-CQD PVs), a technique which affords one a map of current production within the active layer of a PV device. The effects of QD sample size polydispersity as well as layer thickness in CQD active layers as they pertain to current production within these PVs are imaged and explained.more » The results from these experiments compare well with previous estimations, and confirm the ability of EBIC to function as a valuable empirical tool for the design and betterment of DH-CQD PVs. Lastly, extensive and unexpected PbS QD penetration into the mesoporous TiO 2 layer is observed through imaging of device cross sections by energy-dispersive X-ray spectroscopy combined with scanning transmission electron microscopy. Finally, the effects of this finding are discussed and corroborated with the EBIC studies on similar devices.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Jursinic, Paul A., E-mail: pjursinic@wmcc.org
2015-10-15
Purpose: A type of in vivo dosimeter, an optically stimulated luminescent dosimeter, OSLD, may have dose sensitivity that depends on the angle of incidence of radiation. This work measures how angular dependence of a nanoDot changes with the geometry of the phantom in which irradiation occurs and with the intrinsic structure of the nanoDot. Methods: The OSLDs used in this work were nanoDot dosimeters (Landauer, Inc., Glenwood, IL), which were read with a MicroStar reader (Landauer, Inc., Glenwood, IL). Dose to the OSLDs was delivered by 6 MV x-rays. NanoDots with various intrinsic sensitivities were irradiated in numerous phantoms thatmore » had geometric shapes of cylinders, rectangles, and a cube. Results: No angular dependence was seen in cylindrical phantoms, cubic phantoms, or rectangular phantoms with a thickness to width ratio of 0.3 or 1.5. An angular dependence of 1% was observed in rectangular phantoms with a thickness to width of 0.433–0.633. A group of nanoDots had sensitive layers with mass density of 2.42–2.58 g/cm{sup 3} and relative sensitivity of 0.92–1.09 and no difference in their angular dependence. Within experimental uncertainty, nanoDot measurements agree with a parallel-plate ion chamber at a depth of maximum dose. Conclusions: When irradiated in cylindrical, rectangular, and cubic phantoms, nanoDots show a maximum angular dependence of 1% or less at an incidence angle of 90°. For a sample of 78 new nanoDots, the range of their relative intrinsic sensitivity is 0.92–1.09. For a sample of ten nanoDots, on average, the mass in the sensitive layer is 73.1% Al{sub 2}O{sub 3}:C and 26.9% polyester. The mass density of the sensitive layer of a nanoDot disc is between 2.42 and 2.58 g/cm{sup 3}. The angular dependence is not related to Al{sub 2}O{sub 3}:C loading of the nanoDot disc. The nanoDot at the depth of maximum dose has no more angular dependence than a parallel-plate ion chamber.« less
Orientation-dependent imaging of electronically excited quantum dots
NASA Astrophysics Data System (ADS)
Nguyen, Duc; Goings, Joshua J.; Nguyen, Huy A.; Lyding, Joseph; Li, Xiaosong; Gruebele, Martin
2018-02-01
We previously demonstrated that we can image electronic excitations of quantum dots by single-molecule absorption scanning tunneling microscopy (SMA-STM). With this technique, a modulated laser beam periodically saturates an electronic transition of a single nanoparticle, and the resulting tunneling current modulation ΔI(x0, y0) maps out the SMA-STM image. In this paper, we first derive the basic theory to calculate ΔI(x0, y0) in the one-electron approximation. For near-resonant tunneling through an empty orbital "i" of the nanostructure, the SMA-STM signal is approximately proportional to the electron density |φi) (x0,y0)|
Orientation-dependent imaging of electronically excited quantum dots.
Nguyen, Duc; Goings, Joshua J; Nguyen, Huy A; Lyding, Joseph; Li, Xiaosong; Gruebele, Martin
2018-02-14
We previously demonstrated that we can image electronic excitations of quantum dots by single-molecule absorption scanning tunneling microscopy (SMA-STM). With this technique, a modulated laser beam periodically saturates an electronic transition of a single nanoparticle, and the resulting tunneling current modulation ΔI(x 0 , y 0 ) maps out the SMA-STM image. In this paper, we first derive the basic theory to calculate ΔI(x 0 , y 0 ) in the one-electron approximation. For near-resonant tunneling through an empty orbital "i" of the nanostructure, the SMA-STM signal is approximately proportional to the electron density φ i x 0 ,y 0 2 of the excited orbital in the tunneling region. Thus, the SMA-STM signal is approximated by an orbital density map (ODM) of the resonantly excited orbital at energy E i . The situation is more complex for correlated electron motion, but either way a slice through the excited electronic state structure in the tunneling region is imaged. We then show experimentally that we can nudge quantum dots on the surface and roll them, thus imaging excited state electronic structure of a single quantum dot at different orientations. We use density functional theory to model ODMs at various orientations, for qualitative comparison with the SMA-STM experiment. The model demonstrates that our experimentally observed signal monitors excited states, localized by defects near the surface of an individual quantum dot. The sub-nanometer super-resolution imaging technique demonstrated here could become useful for mapping out the three-dimensional structure of excited states localized by defects within nanomaterials.
Temperature dependence of the size distribution function of InAs quantum dots on GaAs(001)
DOE Office of Scientific and Technical Information (OSTI.GOV)
Arciprete, F.; Fanfoni, M.; Patella, F.
2010-04-15
We present a detailed atomic-force-microscopy study of the effect of annealing on InAs/GaAs(001) quantum dots grown by molecular-beam epitaxy. Samples were grown at a low growth rate at 500 deg. C with an InAs coverage slightly greater than critical thickness and subsequently annealed at several temperatures. We find that immediately quenched samples exhibit a bimodal size distribution with a high density of small dots (<50 nm{sup 3}) while annealing at temperatures greater than 420 deg. C leads to a unimodal size distribution. This result indicates a coarsening process governing the evolution of the island size distribution function which is limitedmore » by the attachment-detachment of the adatoms at the island boundary. At higher temperatures one cannot ascribe a single rate-determining step for coarsening because of the increased role of adatom diffusion. However, for long annealing times at 500 deg. C the island size distribution is strongly affected by In desorption.« less
NASA Astrophysics Data System (ADS)
Dong, Yajie
2017-02-01
Quantum dots (QDs) have gone through a long journey before finding their ways into the display field. This talk will briefly touch on the history before trying to answer several key questions related to QDs applications in display: What are QDs? How are they made? What properties do they have and Why? How can these properties be used to improve color and efficiency of display, in either photoluminescence (PL) or electroluminescence (EL) mode? And what are the remaining challenges for QDs wide adoption in display industry? Lastly, some most recent progresses in our UCF lab at both PL and EL fronts will be highlighted. For PL, a cadmium-free perovskite-polymer composite films with exceptionally narrow emission green peaks (FWHM 20 nm) and good water and thermal stability will be reported. Together with red quantum dots or PFS/KSF phosphors as down-converters for blue LEDs, a white-light source with 95% Rec. 2020 color gamut was demonstrated [1]. For EL, red quantum dot light emitting devices (QLEDs) with record luminance of 165,000 Cd/m2 has been obtained at a current density of 1000 mA/cm2 with a low driving voltage of 5.8 V and CIE coordinates of (0.69, 0.31). [2] The potential of using these QLEDs for light sources for integrated sensing platform [3] or high efficiency, high color quality hybrid white OLED [4] will be discussed. [1] Y. N. Wang, J. He, H. Chen, J. S. Chen, R. D. Zhu, P. Ma, A. Towers, Y. Lin, A. J. Gesquiere, S. T. Wu, Y. J. Dong. Ultrastable, Highly Luminescent Organic-Inorganic Perovskite - Polymer Composite Films, Advanced Materials, accepted, (2016). [2] Y. J. Dong, J.M. Caruge, Z. Q. Zhou, C. Hamilton, Z. Popovic, J. Ho, M. Stevenson, G. Liu, V. Bulovic, M. Bawendi, P. T. Kazlas, S. Coe-Sullivan, and J. Steckel Ultra-bright, Highly Efficient, Low Roll-off Inverted Quantum-Dot Light Emitting Devices (QLEDs). SID Symp. Dig. Tech. Pap. 46, 270-273 (2015). [3] J. He, H. Chen, S. T. Wu, and Y. J. Dong, Integrated Sensing Platform Based on Quantum Dot Light Emitting Diodes. SID Symp. Dig. Tech. Pap. 47, 344-346 (2016). [4] H. Chen, J. He, J. S. Chen, S. T. Wu and Y. J. Dong, High Efficacy, High Color Quality Hybrid White OLEDs Incorporating Red Quantum Dots with Narrow Emission Bands. SID Symp. Dig. Tech. Pap. 47, 50-52 (2016).
Ilie, C C; Guzman, F; Swanson, B L; Evans, I R; Costa, P S; Teeter, J D; Shekhirev, M; Benker, N; Sikich, S; Enders, A; Dowben, P A; Sinitskii, A; Yost, A J
2018-05-10
Photoactive perovskite quantum dot films, deposited via an inkjet printer, have been characterized by x-ray diffraction and x-ray photoelectron spectroscopy. The crystal structure and bonding environment are consistent with CsPbBr 3 perovskite quantum dots. The current-voltage (I-V) and capacitance-voltage (C-V) transport measurements indicate that the photo-carrier drift lifetime can exceed 1 ms for some printed perovskite films. This far exceeds the dark drift carrier lifetime, which is below 50 ns. The printed films show a photocarrier density 10 9 greater than the dark carrier density, making these printed films ideal candidates for application in photodetectors. The successful printing of photoactive-perovskite quantum dot films of CsPbBr 3 , indicates that the rapid prototyping of various perovskite inks and multilayers is realizable.
The vertical structure and stability of accretion disks surrounding black holes and neutron stars
NASA Technical Reports Server (NTRS)
Milsom, J. A.; Chen, Xingming; Taam, Ronald E.
1994-01-01
The structure and stability of the inner regions of accretion disks surrounding neutron stars and black holes have been investigated. Within the framework of the alpha viscosity prescription for optically thick disks, we assume the viscous stress scales with gas pressure only, and the alpha parameter, which is less than or equal to unity, is formulated as alpha(sub 0)(h/r)(exp n), where h is the local scale height and n and alpha(sub 0) are constants. We neglect advective energy transport associated with radial motions and construct the vertical structure of the disks by assuming a Keplerian rotation law and local hydrostatic and thermal equilibrium. The vertical structures have been calculated with and without convective energy transport, and it has been demonstrated that convection is important especially for mass accretion rates, M-dot, greater than about 0.1 times the Eddington value, M-dot(sub Edd). Although the efficiency of convection is not high, convection significantly modifies the vertical structure of the disk (as compared with a purely radiative model) and leads to lower temperatures at a given M-dot. The results show that the disk can be locally unstable and that for n greater than or = 0.75, an S-shaped relation can exist between M-dot and the column density, sigma, at a given radius. While the lower stable branch (derivative of M-dot/derivative of sigma greater than 0) and middle unstable branch (derivative of M-dot/derivative of sigma less than 0) represent structures for which the gas and radiation pressure dominate respectively, the stable upper branch (derivative of M-dot/derivative of sigma greater than 0) is a consequence of the saturation of alpha. This saturation of alpha can occur for large alpha(sub 0) and at M-dot less than or = M-dot(sub Edd). The instability is found to occur at higher mass accretion rates for neutron stars than for black holes. In particular, the disk is locally unstable for M-dot greater than or = 0.5 M-dot(sub Edd) for neutron stars and for M-dot greater than or = M-dot(sub Edd) for black holes for a viscosity prescription characterized by n = 1 and alpha(sub 0) = 10.
Weiss, Emily A
2013-11-19
In order to achieve efficient and reliable technology that can harness solar energy, the behavior of electrons and energy at interfaces between different types or phases of materials must be understood. Conversion of light to chemical or electrical potential in condensed phase systems requires gradients in free energy that allow the movement of energy or charge carriers and facilitate redox reactions and dissociation of photoexcited states (excitons) into free charge carriers. Such free energy gradients are present at interfaces between solid and liquid phases or between inorganic and organic materials. Nanostructured materials have a higher density of these interfaces than bulk materials. Nanostructured materials, however, have a structural and chemical complexity that does not exist in bulk materials, which presents a difficult challenge: to lower or eliminate energy barriers to electron and energy flux that inevitably result from forcing different materials to meet in a spatial region of atomic dimensions. Chemical functionalization of nanostructured materials is perhaps the most versatile and powerful strategy for controlling the potential energy landscape of their interfaces and for minimizing losses in energy conversion efficiency due to interfacial structural and electronic defects. Colloidal quantum dots are semiconductor nanocrystals synthesized with wet-chemical methods and coated in organic molecules. Chemists can use these model systems to study the effects of chemical functionalization of nanoscale organic/inorganic interfaces on the optical and electronic properties of a nanostructured material, and the behavior of electrons and energy at interfaces. The optical and electronic properties of colloidal quantum dots have an intense sensitivity to their surface chemistry, and their organic adlayers make them dispersible in solvent. This allows researchers to use high signal-to-noise solution-phase spectroscopy to study processes at interfaces. In this Account, I describe the varied roles of organic molecules in controlling the structure and properties of colloidal quantum dots. Molecules serve as surfactant that determines the mechanism and rate of nucleation and growth and the final size and surface structure of a quantum dot. Anionic surfactant in the reaction mixture allows precise control over the size of the quantum dot core but also drives cation enrichment and structural disordering of the quantum dot surface. Molecules serve as chemisorbed ligands that dictate the energetic distribution of surface states. These states can then serve as thermodynamic traps for excitonic charge carriers or couple to delocalized states of the quantum dot core to change the confinement energy of excitonic carriers. Ligands, therefore, in some cases, dramatically shift the ground state absorption and photoluminescence spectra of quantum dots. Molecules also act as protective layers that determine the probability of redox processes between quantum dots and other molecules. How much the ligand shell insulates the quantum dot from electron exchange with a molecular redox partner depends less on the length or degree of conjugation of the native ligand and more on the density and packing structure of the adlayer and the size and adsorption mode of the molecular redox partner. Control of quantum dot properties in these examples demonstrates that nanoscale interfaces, while complex, can be rationally designed to enhance or specify the functionality of a nanostructured system.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Harack, B.; Leary, A.; Coish, W. A.
2013-12-04
We outline power spectra and auto correlation analysis performed on temporal oscillations in the tunneling current of coupled vertical quantum dots. The current is monitored for ∼2325 s blocks as the magnetic field is stepped through a high bias feature displaying hysteresis and switching: hallmarks of the hyperfine interaction. Quasi-periodic oscillations of ∼2 pA amplitude and of ∼100 s period are observed in the current inside the hysteretic feature. Compared to the baseline current outside the hysteretic feature the power spectral density is enhanced by up to three orders of magnitude and the auto correlation displays clear long lived oscillationsmore » about zero.« less
NASA Astrophysics Data System (ADS)
Watanabe, Tsuyoshi; Taniguchi, Kazutake; Suzuki, Kouta; Iyama, Hiromasa; Kishimoto, Shuji; Sato, Takashi; Kobayashi, Hideo
2016-06-01
Fine hole and dot patterns with bit pitches (bp’s) of less than 40 nm were fabricated in the circular band area of a quartz substrate by R-θ electron beam lithography (EBL), reactive ion etching (RIE), and nanoimprinting. These patterning processes were studied to obtain minimum pitch sizes of hole and dot patterns without pattern collapse. The patterning on the circular band was aimed to apply these patterning processes to future high-density bit-patterned media (BPM) for hard disk drive (HDD) and permanent memory for the long life archiving of digital data. In hole patterning, a minimum-22-nm-bp and 8.2-nm-diameter pattern (1.3 Tbit/in.2) was obtained on a quartz substrate by optimizing the R-θ EBL and RIE processes. Dot patterns were replicated on another quartz substrate by nanoimprinting using a hole-patterned quartz substrate as a master mold followed by RIE. In dot patterning, a minimum-30-nm-bp and 18.5-nm-diameter pattern (0.7 Tbit/in.2) was obtained by introducing new descum conditions. It was observed that the minimum bp of successful patterning increased as the fabrication process proceeded, i.e., from 20 nm bp in the first EBL process to 30 nm bp in the last quartz dot patterning process. From the measured diameters of the patterns, it was revealed that pattern collapse was apt to occur when the value of average diameter plus 3 sigma of diameter was close to the bp. It was suggested that multiple fabrication processes caused the degradation of pattern quality; therefore, hole patterning is more suitable than dot patterning for future applications owing to the lower quality degradation by its simple fabrication process.
Continuous-wave operation of InAsSb/InP quantum - dot lasers near 2 (mu)m at room temperature
NASA Technical Reports Server (NTRS)
Qiu, Yueming; Uhl, David; Keo, Sam
2004-01-01
InAsSb quantum-dot lasers near 2 pm were demonstrated in cw operation at room temperature with a threshold current density of below 1 kA/cm, output power of 3 mW/facet and a differential quantum efficiency of 13%.
Enhanced Photoelectrochemical Water Splitting Behaviour of Tuned Band Gap CdSe QDs Sensitized LaB₆.
Babu, M Soban; Sivanantham, A; Chakravarthi, B Barath; Kannan, R Sujith; Panda, Subhendu K; Berchmans, L John; Arya, S B; Sreedhar, Gosipathala
2017-01-01
We report the fabrication of tuned band gap quantum dots sensitized LaB₆ hybrid nanostructures and their application as a photoanode for photoelectrochemical water splitting. The lanthanum hexaboride (LaB₆) obtained by molten salt electrolysis method is sensitized with different sized CdSe quantum dots, which form a multiple-level hierarchical heterostructure and such design enhance the light absorption and charge carrier separation, which in turn showed higher photocurrent density compared to that of pristine LaB₆. When LaB₆ is sensitized with CdSe quantum dots of different band gaps, which have the absorption in the green and red (530 and 605 nm) regions in visible light, developed a ten times higher photocurrent density (11.0 mA cm(−2)) compared to that of pristine LaB6 (0.5 mA cm(−2) at 0.75 V vs. Ag/AgCl) in 1 M Na₂S electrolyte under illumination. These results prove that the tuned band gap quantum dots sensitized LaB₆ heterostructures are an ideal candidate for a photoanode in solar water splitting applications.
Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy
DOE Office of Scientific and Technical Information (OSTI.GOV)
Parkhomenko, Ya. A.; Dement’ev, P. A.; Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru
2016-07-15
The first results of the liquid-phase epitaxial growth of quantum dots in the InSb/GaSb system and atomic-force microscopy data on the structural characteristics of the quantum dots are reported. It is shown that the surface density, shape, and size of nanoislands depend on the deposition temperature and the chemical properties of the matrix surface. Arrays of InSb quantum dots on GaSb (001) substrates are produced in the temperature range T = 450–465°C. The average dimensions of the quantum dots correspond to a height of h = 3 nm and a base dimension of D = 30 nm; the surface densitymore » is 3 × 10{sup 9} cm{sup –2}.« less
First principles study of edge carboxylated graphene quantum dots
NASA Astrophysics Data System (ADS)
Abdelsalam, Hazem; Elhaes, Hanan; Ibrahim, Medhat A.
2018-05-01
The structure stability and electronic properties of edge carboxylated hexagonal and triangular graphene quantum dots are investigated using density functional theory. The calculated binding energies show that the hexagonal clusters with armchair edges have the highest stability among all the quantum dots. The binding energy of carboxylated graphene quantum dots increases by increasing the number of carboxyl groups. Our study shows that the total dipole moment significantly increases by adding COOH with the highest value observed in triangular clusters. The edge states in triangular graphene quantum dots with zigzag edges produce completely different energy spectrum from other dots: (a) the energy gap in triangular zigzag is very small as compared to other clusters and (b) the highest occupied molecular orbital is localized at the edges which is in contrast to other clusters where it is distributed over the cluster surface. The enhanced reactivity and the controllable energy gap by shape and edge termination make graphene quantum dots ideal for various nanodevice applications such as sensors. The infrared spectra are presented to confirm the stability of the quantum dots.
NASA Astrophysics Data System (ADS)
Kim, Jungho; Yu, Bong-Ahn
2015-03-01
We numerically investigate the effect of the wetting-layer (WL) density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers in both electrical and optical pumping schemes by solving 1088 coupled rate equations. The temporal variations of the ultrafast gain and phase recovery responses at the ground state (GS) are calculated as a function of the WL density of states. The ultrafast gain recovery responses do not significantly depend on the WL density of states in the electrical pumping scheme and the three optical pumping schemes such as the optical pumping to the WL, the optical pumping to the excited state ensemble, and the optical pumping to the GS ensemble. The ultrafast phase recovery responses are also not significantly affected by the WL density of states except the optical pumping to the WL, where the phase recovery component caused by the WL becomes slowed down as the WL density of states increases.
Tripathy, Srimant P.; Shafiullah, Syed N.; Cox, Michael J.
2012-01-01
Correspondence noise is a major factor limiting direction discrimination performance in random-dot kinematograms [1]. In the current study we investigated the influence of correspondence noise on Dmax, which is the upper limit for the spatial displacement of the dots for which coherent motion is still perceived. Human direction discrimination performance was measured, using 2-frame kinematograms having leftward/rightward motion, over a 200-fold range of dot-densities and a four-fold range of dot displacements. From this data Dmax was estimated for the different dot densities tested. A model was proposed to evaluate the correspondence noise in the stimulus. This model summed the outputs of a set of elementary Reichardt-type local detectors that had receptive fields tiling the stimulus and were tuned to the two directions of motion in the stimulus. A key assumption of the model was that the local detectors would have the radius of their catchment areas scaled with the displacement that they were tuned to detect; the scaling factor k linking the radius to the displacement was the only free parameter in the model and a single value of k was used to fit all of the psychophysical data collected. This minimal, correspondence-noise based model was able to account for 91% of the variability in the human performance across all of the conditions tested. The results highlight the importance of correspondence noise in constraining the largest displacement that can be detected. PMID:23056172
Tripathy, Srimant P; Shafiullah, Syed N; Cox, Michael J
2012-01-01
Correspondence noise is a major factor limiting direction discrimination performance in random-dot kinematograms. In the current study we investigated the influence of correspondence noise on Dmax, which is the upper limit for the spatial displacement of the dots for which coherent motion is still perceived. Human direction discrimination performance was measured, using 2-frame kinematograms having leftward/rightward motion, over a 200-fold range of dot-densities and a four-fold range of dot displacements. From this data Dmax was estimated for the different dot densities tested. A model was proposed to evaluate the correspondence noise in the stimulus. This model summed the outputs of a set of elementary Reichardt-type local detectors that had receptive fields tiling the stimulus and were tuned to the two directions of motion in the stimulus. A key assumption of the model was that the local detectors would have the radius of their catchment areas scaled with the displacement that they were tuned to detect; the scaling factor k linking the radius to the displacement was the only free parameter in the model and a single value of k was used to fit all of the psychophysical data collected. This minimal, correspondence-noise based model was able to account for 91% of the variability in the human performance across all of the conditions tested. The results highlight the importance of correspondence noise in constraining the largest displacement that can be detected.
Zhu, Jingrun; Yang, Xiaoling; Zhu, Yihua; Wang, Yuanwei; Cai, Jin; Shen, Jianhua; Sun, Luyi; Li, Chunzhong
2017-09-07
Here we report the room-temperature, atmospheric synthesis of Mn-doped cesium lead halide (CsPbX 3 ) perovskite quantum dots (QDs). The synthesis is performed without any sort of protection, and the dual-color emission mechanism is revealed by density functional theory. The Mn concentration reaches a maximum atomic percentage of 37.73 at%, which is significantly higher in comparison to those achieved in earlier reports via high temperature hot injection method. The optical properties of as-prepared nanocrystals (NCs) remain consistent even after several months. Therefore, red-orange LEDs were fabricated by coating the composite of PS and as-prepared QDs onto ultraviolet LED chips. Additionally, the present approach may open up new methods for doping other ions in CsPbX 3 QDs under room temperature, the capability of which is essential for applications such as memristors and other devices.
NASA Astrophysics Data System (ADS)
Youssef, Sarah; El-Batawy, Yasser M.; Abouelsaood, Ahmed A.
2016-09-01
A theoretical method for calculating the electron mobility in quantum dot infrared photodetectors is developed. The mobility calculation is based on a time-dependent, finite-difference solution of the Boltzmann transport equation in a bulk semiconductor material with randomly positioned conical quantum dots. The quantum dots act as scatterers of current carriers (conduction-band electrons in our case), resulting in limiting their mobility. In fact, carrier scattering by quantum dots is typically the dominant factor in determining the mobility in the active region of the quantum dot device. The calculated values of the mobility are used in a recently developed generalized drift-diffusion model for the dark current of the device [Ameen et al., J. Appl. Phys. 115, 063703 (2014)] in order to fix the overall current scale. The results of the model are verified by comparing the predicted dark current characteristics to those experimentally measured and reported for actual InAs/GaAs quantum dot infrared photodetectors. Finally, the effect of the several relevant device parameters, including the operating temperature and the quantum dot average density, is studied.
Grouping by proximity and the visual impression of approximate number in random dot arrays.
Im, Hee Yeon; Zhong, Sheng-Hua; Halberda, Justin
2016-09-01
We address the challenges of how to model human perceptual grouping in random dot arrays and how perceptual grouping affects human number estimation in these arrays. We introduce a modeling approach relying on a modified k-means clustering algorithm to formally describe human observers' grouping behavior. We found that a default grouping window size of approximately 4° of visual angle describes human grouping judgments across a range of random dot arrays (i.e., items within 4° are grouped together). This window size was highly consistent across observers and images, and was also stable across stimulus durations, suggesting that the k-means model captured a robust signature of perceptual grouping. Further, the k-means model outperformed other models (e.g., CODE) at describing human grouping behavior. Next, we found that the more the dots in a display are clustered together, the more human observers tend to underestimate the numerosity of the dots. We demonstrate that this effect is independent of density, and the modified k-means model can predict human observers' numerosity judgments and underestimation. Finally, we explored the robustness of the relationship between clustering and dot number underestimation and found that the effects of clustering remain, but are greatly reduced, when participants receive feedback on every trial. Together, this work suggests some promising avenues for formal models of human grouping behavior, and it highlights the importance of a 4° window of perceptual grouping. Lastly, it reveals a robust, somewhat plastic, relationship between perceptual grouping and number estimation. Copyright © 2015 Elsevier Ltd. All rights reserved.
NASA Astrophysics Data System (ADS)
Indukuri, Chaitanya; Mukherjee, Arnab; Basu, J. K.
2015-03-01
We report results of controlled tuning of the local density of states (LDOS) in versatile, flexible, and hierarchical self assembled plasmonic templates. Using 5 nm diameter gold (Au) spherical nanoantenna within a polymer template randomly dispersed with quantum dots, we show how the photoluminescence intensity and lifetime anisotropy of these dots can be significantly enhanced through LDOS tuning. Finite difference time domain simulations corroborate the experimental observations and extend the regime of enhancement to a wider range of geometric and spectral parameters bringing out the versatility of these functional plasmonic templates. It is also demonstrated how the templates act as plasmonic resonators for effectively engineer giant enhancement of the scattering efficiency of these nano antenna embedded in the templates. Our work provides an alternative method to achieve spontaneous emission intensity and anisotropy enhancement with true nanoscale plasmon resonators.
Controllable Quantum States Mesoscopic Superconductivity and Spintronics (MS+S2006)
NASA Astrophysics Data System (ADS)
Takayanagi, Hideaki; Nitta, Junsaku; Nakano, Hayato
2008-10-01
Mesoscopic effects in superconductors. Tunneling measurements of charge imbalance of non-equilibrium superconductors / R. Yagi. Influence of magnetic impurities on Josephson current in SNS junctions / T. Yokoyama. Nonlinear response and observable signatures of equilibrium entanglement / A. M. Zagoskin. Stimulated Raman adiabatic passage with a Cooper pair box / Giuseppe Falci. Crossed Andreev reflection-induced giant negative magnetoresistance / Francesco Giazotto -- Quantum modulation of superconducting junctions. Adiabatic pumping through a Josephson weak link / Fabio Taddei. Squeezing of superconducting qubits / Kazutomu Shiokawa. Detection of Berrys phases in flux qubits with coherent pulses / D. N. Zheng. Probing entanglement in the system of coupled Josephson qubits / A. S. Kiyko. Josephson junction with tunable damping using quasi-particle injection / Ryuta Yagi. Macroscopic quantum coherence in rf-SQUIDs / Alexey V. Ustinov. Bloch oscillations in a Josephson circuit / D. Esteve. Manipulation of magnetization in nonequilibrium superconducting nanostructures / F. Giazotto -- Superconducting qubits. Decoherence and Rabi oscillations in a qubit coupled to a quantum two-level system / Sahel Ashhab. Phase-coupled flux qubits: CNOT operation, controllable coupling and entanglement / Mun Dae Kim. Characteristics of a switchable superconducting flux transformer with a DC-SQUID / Yoshihiro Shimazu. Characterization of adiabatic noise in charge-based coherent nanodevices / E. Paladino -- Unconventional superconductors. Threshold temperatures of zero-bias conductance peak and zero-bias conductance dip in diffusive normal metal/superconductor junctions / Iduru Shigeta. Tunneling conductance in 2DEG/S junctions in the presence of Rashba spin-orbit coupling / T. Yokoyama. Theory of charge transport in diffusive ferromagnet/p-wave superconductor junctions / T. Yokoyama. Theory of enhanced proximity effect by the exchange field in FS bilayers / T. Yokoyama. Theory of Josephson effect in diffusive d-wave junctions / T. Yokoyama. Quantum dissipation due to the zero energy bound states in high-T[symbol] superconductor junctions / Shiro Kawabata. Spin-polarized heat transport in ferromagnet/unconventional superconductor junctions / T. Yokoyama. Little-Parks oscillations in chiral p-wave superconducting rings / Mitsuaki Takigawa. Theoretical study of synergy effect between proximity effect and Andreev interface resonant states in triplet p-wave superconductors / Yasunari Tanuma. Theory of proximity effect in unconventional superconductor junctions / Y. Tanaka -- Quantum information. Analyzing the effectiveness of the quantum repeater / Kenichiro Furuta. Architecture-dependent execution time of Shor's algorithm / Rodney Van Meter -- Quantum dots and Kondo effects. Coulomb blockade properties of 4-gated quantum dot / Shinichi Amaha. Order-N electronic structure calculation of n-type GaAs quantum dots / Shintaro Nomura. Transport through double-dots coupled to normal and superconducting leads / Yoichi Tanaka. A study of the quantum dot in application to terahertz single photon counting / Vladimir Antonov. Electron transport through laterally coupled double quantum dots / T. Kubo. Dephasing in Kondo systems: comparison between theory and experiment / F. Mallet. Kondo effect in quantum dots coupled with noncollinear ferromagnetic leads / Daisuke Matsubayashi. Non-crossing approximation study of multi-orbital Kondo effect in quantum dot systems / Tomoko Kita. Theoretical study of electronic states and spin operation in coupled quantum dots / Mikio Eto. Spin correlation in a double quantum dot-quantum wire coupled system / S. Sasaki. Kondo-assisted transport through a multiorbital quantum dot / Rui Sakano. Spin decay in a quantum dot coupled to a quantum point contact / Massoud Borhani -- Quantum wires, low-dimensional electrons. Control of the electron density and electric field with front and back gates / Masumi Yamaguchi. Effect of the array distance on the magnetization configuration of submicron-sized ferromagnetic rings / Tetsuya Miyawaki. A wide GaAs/GaAlAs quantum well simultaneously containing two dimensional electrons and holes / Ane Jensen. Simulation of the photon-spin quantum state transfer process / Yoshiaki Rikitake. Magnetotransport in two-dimensional electron gases on cylindrical surface / Friedland Klaus-Juergen. Full counting statistics for a single-electron transistor at intermediate conductance / Yasuhiro Utsumi. Creation of spin-polarized current using quantum point contacts and its detection / Mikio Eto. Density dependent electron effective mass in a back-gated quantum well / S. Nomura. The supersymmetric sigma formula and metal-insulator transition in diluted magnetic semiconductors / I. Kanazawa. Spin-photovoltaic effect in quantum wires / A. Fedorov -- Quantum interference. Nonequilibrium transport in Aharonov-Bohm interferometer with electron-phonon interaction / Akiko Ueda. Fano resonance and its breakdown in AB ring embedded with a molecule / Shigeo Fujimoto, Yuhei Natsume. Quantum resonance above a barrier in the presence of dissipation / Kohkichi Konno. Ensemble averaging in metallic quantum networks / F. Mallet -- Coherence and order in exotic materials. Progress towards an electronic array on liquid helium / David Rees. Measuring noise and cross correlations at high frequencies in nanophysics / T. Martin. Single wall carbon nanotube weak links / K. Grove-Rasmussen. Optical preparation of nuclear spins coupled to a localized electron spin / Guido Burkard. Topological effects in charge density wave dynamics / Toru Matsuura. Studies on nanoscale charge-density-wave systems: fabrication technique and transport phenomena / Katsuhiko Inagaki. Anisotropic behavior of hysteresis induced by the in-plane field in the v = 2/3 quantum Hall state / Kazuki Iwata. Phase diagram of the v = 2 bilayer quantum Hall state / Akira Fukuda -- Trapped ions (special talk). Quantum computation with trapped ions / Hartmut Häffner.
Dark channels in resonant tunneling transport through artificial atoms.
Vaz, Eduardo; Kyriakidis, Jordan
2008-07-14
We investigate sequential tunneling through a multilevel quantum dot confining multiple electrons in the regime where several channels are available for transport within the bias window. By analyzing solutions to the master equations of the reduced density matrix, we give general conditions on when the presence of a second transport channel in the bias window quenches transport through the quantum dot. These conditions are in terms of distinct tunneling anisotropies which may aid in explaining the occurrence of negative differential conductance in quantum dots in the nonlinear regime.
NASA Astrophysics Data System (ADS)
Shu, Qijiang; Yang, Jie; Chi, Qingbin; Sun, Tao; Wang, Chong; Yang, Yu
2018-04-01
Ge/Si quantum dots (QDs) are fabricated by driving the transformation of a Ge thin film-deposited using the direct current (DC) magnetron sputtering technique by controlling the subsequent in situ annealing processes. The experimental results indicate that, with the increase in annealing temperature, the volume of Ge QDs increases monotonically, while the QD density initially increases then decreases. The maximal QD density can reach 1.1 × 1011 cm‑2 after a 10 min annealing at 650 °C. The Ge–Ge peak of Ge QDs obtained by Raman spectroscopy initially undergoes a blue shift and then a red shift with increasing annealing temperature. This behavior results from the competition between the dislocation and the strain relaxation in QDs. Concurrently, a series of photoelectric detectors are fabricated to evaluate the photoelectric performance of these annealed Ge QD samples. A high-photoelectricity response is demonstrated in the QD sample annealed at 650 °C. Our results pave a promising way for whole-silicon-material optical-electronic integration based on a simple and practicable fabrication method.
Choi, Hyekyoung; Song, Jung Hoon; Jang, Jihoon; Mai, Xuan Dung; Kim, Sungwoo; Jeong, Sohee
2015-11-07
We fabricated heterojunction solar cells with PbSe/PbS core shell quantum dots and studied the precisely controlled PbS shell thickness dependency in terms of optical properties, electronic structure, and solar cell performances. When the PbS shell thickness increases, the short circuit current density (JSC) increases from 6.4 to 11.8 mA cm(-2) and the fill factor (FF) enhances from 30 to 49% while the open circuit voltage (VOC) remains unchanged at 0.46 V even with the decreased effective band gap. We found that the Fermi level and the valence band maximum level remain unchanged in both the PbSe core and PbSe/PbS core/shell with a less than 1 nm thick PbS shell as probed via ultraviolet photoelectron spectroscopy (UPS). The PbS shell reduces their surface trap density as confirmed by relative quantum yield measurements. Consequently, PbS shell formation on the PbSe core mitigates the trade-off relationship between the open circuit voltage and the short circuit current density. Finally, under the optimized conditions, the PbSe core with a 0.9 nm thick shell yielded a power conversion efficiency of 6.5% under AM 1.5.
Efficient Ga(As)Sb quantum dot emission in AlGaAs by GaAs intermediate layer
NASA Astrophysics Data System (ADS)
Loeber, Thomas Henning; Richter, Johannes; Strassner, Johannes; Heisel, Carina; Kimmle, Christina; Fouckhardt, Henning
2013-03-01
Ga(As)Sb quantum dots (QDs) are epitaxially grown in AlGaAs/GaAs in the Stranski-Krastanov mode. In the recent past we achieved Ga(As)Sb QDs in GaAs with an extremely high dot density of 9.8•1010 cm-2 by optimization of growth temperature, Sb/Ga flux pressure ratio, and coverage. Additionally, the QD emission wavelength could be chosen precisely with these growth parameters in the range between 876 and 1035 nm. Here we report a photoluminescence (PL) intensity improvement for the case with AlGaAs barriers. Again growth parameters and layer composition are varied. The aluminium content is varied between 0 and 90%. Reflectance anisotropy spectroscopy (RAS) is used as insitu growth control to determine growth rate, layer thickness, and AlGaAs composition. Ga(As)Sb QDs, directly grown in AlxGa1-xAs emit no PL signal, even with a very low x ≈ 0.1. With additional around 10 nm thin GaAs intermediate layers between the Ga(As)Sb QDs and the AlGaAs barriers PL signals are detected. Samples with 4 QD layers and AlxGa1-xAs/GaAs barriers in between are grown. The thickness and composition of the barriers are changed. Depending on these values PL intensity is more than 4 times as high as in the case with simple GaAs barriers. With these results efficient Ga(As)Sb QD lasers are realized, so far only with pure GaAs barriers. Our index-guided broad area lasers operate continuous-wave (cw) @ 90 K, emit optical powers of more than 2•50 mW and show a differential quantum efficiency of 54% with a threshold current density of 528 A/cm2.
Chitnis, Danial; Cooper, Robert J; Dempsey, Laura; Powell, Samuel; Quaggia, Simone; Highton, David; Elwell, Clare; Hebden, Jeremy C; Everdell, Nicholas L
2016-10-01
We present the first three-dimensional, functional images of the human brain to be obtained using a fibre-less, high-density diffuse optical tomography system. Our technology consists of independent, miniaturized, silicone-encapsulated DOT modules that can be placed directly on the scalp. Four of these modules were arranged to provide up to 128, dual-wavelength measurement channels over a scalp area of approximately 60 × 65 mm 2 . Using a series of motor-cortex stimulation experiments, we demonstrate that this system can obtain high-quality, continuous-wave measurements at source-detector separations ranging from 14 to 55 mm in adults, in the presence of hair. We identify robust haemodynamic response functions in 5 out of 5 subjects, and present diffuse optical tomography images that depict functional haemodynamic responses that are well-localized in all three dimensions at both the individual and group levels. This prototype modular system paves the way for a new generation of wearable, wireless, high-density optical neuroimaging technologies.
A Transfer Hamiltonian Model for Devices Based on Quantum Dot Arrays
Illera, S.; Prades, J. D.; Cirera, A.; Cornet, A.
2015-01-01
We present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach. A set of noncoherent rate equations can be written and the interaction between the quantum dots and between the quantum dots and the electrodes is introduced by transition rates and capacitive couplings. A realistic modelization of the capacitive couplings, the transmission coefficients, the electron/hole tunneling currents, and the density of states of each quantum dot have been taken into account. The effects of the local potential are computed within the self-consistent field regime. While the description of the theoretical framework is kept as general as possible, two specific prototypical devices, an arbitrary array of quantum dots embedded in a matrix insulator and a transistor device based on quantum dots, are used to illustrate the kind of unique insight that numerical simulations based on the theory are able to provide. PMID:25879055
A transfer hamiltonian model for devices based on quantum dot arrays.
Illera, S; Prades, J D; Cirera, A; Cornet, A
2015-01-01
We present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach. A set of noncoherent rate equations can be written and the interaction between the quantum dots and between the quantum dots and the electrodes is introduced by transition rates and capacitive couplings. A realistic modelization of the capacitive couplings, the transmission coefficients, the electron/hole tunneling currents, and the density of states of each quantum dot have been taken into account. The effects of the local potential are computed within the self-consistent field regime. While the description of the theoretical framework is kept as general as possible, two specific prototypical devices, an arbitrary array of quantum dots embedded in a matrix insulator and a transistor device based on quantum dots, are used to illustrate the kind of unique insight that numerical simulations based on the theory are able to provide.
Droplet heteroepitaxy of zinc-blende vs. wurtzite GaN quantum dots
NASA Astrophysics Data System (ADS)
Reese, C.; Jeon, S.; Hill, T.; Jones, C.; Shusterman, S.; Yacoby, Y.; Clarke, R.; Deng, H.; Goldman, Rs
We have developed a GaN droplet heteroepitaxy process based upon plasma-assisted molecular-beam epitaxy. Using various surface treatments and Ga deposition parameters, we have demonstrated polycrystalline, zinc-blende (ZB), and wurtzite (WZ) GaN quantum dots (QDs) on Si(001), r-Al2O3, Si(111), and c-GaN substrates. For the polar substrates (i.e. Si(111) and c-GaN), high-resolution transmission electron microscopy and coherent Bragg rod analysis reveals the formation of coherent WZ GaN QDs with nitridation-temperature-dependent sizes and densities. For the non-polar substrates (i.e. Si(001) and r-Al2O3) , QDs with strong near-band photoluminescence emission are observed and ZB GaN QD growth on Si(001) is demonstrated for the first time.
Inorganic-ligand exchanging time effect in PbS quantum dot solar cell
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kim, Byung-Sung; Hong, John; Hou, Bo
2016-08-08
We investigate time-dependent inorganic ligand exchanging effect and photovoltaic performance of lead sulfide (PbS) nanocrystal films. With optimal processing time, volume shrinkage induced by residual oleic acid of the PbS colloidal quantum dot (CQD) was minimized and a crack-free film was obtained with improved flatness. Furthermore, sufficient surface passivation significantly increased the packing density by replacing from long oleic acid to a short iodide molecule. It thus facilities exciton dissociation via enhanced charge carrier transport in PbS CQD films, resulting in the improved power conversion efficiency from 3.39% to 6.62%. We also found that excess iodine ions on the PbSmore » surface rather hinder high photovoltaic performance of the CQD solar cell.« less
NASA Astrophysics Data System (ADS)
Garcia-Castello, Nuria; Illera, Sergio; Guerra, Roberto; Prades, Joan Daniel; Ossicini, Stefano; Cirera, Albert
2013-08-01
We study the details of electronic transport related to the atomistic structure of silicon quantum dots embedded in a silicon dioxide matrix using ab initio calculations of the density of states. Several structural and composition features of quantum dots (QDs), such as diameter and amorphization level, are studied and correlated with transport under transfer Hamiltonian formalism. The current is strongly dependent on the QD density of states and on the conduction gap, both dependent on the dot diameter. In particular, as size increases, the available states inside the QD increase, while the QD band gap decreases due to relaxation of quantum confinement. Both effects contribute to increasing the current with the dot size. Besides, valence band offset between the band edges of the QD and the silica, and conduction band offset in a minor grade, increases with the QD diameter up to the theoretical value corresponding to planar heterostructures, thus decreasing the tunneling transmission probability and hence the total current. We discuss the influence of these parameters on electron and hole transport, evidencing a correlation between the electron (hole) barrier value and the electron (hole) current, and obtaining a general enhancement of the electron (hole) transport for larger (smaller) QD. Finally, we show that crystalline and amorphous structures exhibit enhanced probability of hole and electron current, respectively.
Ruiz, J E; Paciornik, S; Pinto, L D; Ptak, F; Pires, M P; Souza, P L
2018-01-01
An optimized method of digital image processing to interpret quantum dots' height measurements obtained by atomic force microscopy is presented. The method was developed by combining well-known digital image processing techniques and particle recognition algorithms. The properties of quantum dot structures strongly depend on dots' height, among other features. Determination of their height is sensitive to small variations in their digital image processing parameters, which can generate misleading results. Comparing the results obtained with two image processing techniques - a conventional method and the new method proposed herein - with the data obtained by determining the height of quantum dots one by one within a fixed area, showed that the optimized method leads to more accurate results. Moreover, the log-normal distribution, which is often used to represent natural processes, shows a better fit to the quantum dots' height histogram obtained with the proposed method. Finally, the quantum dots' height obtained were used to calculate the predicted photoluminescence peak energies which were compared with the experimental data. Again, a better match was observed when using the proposed method to evaluate the quantum dots' height. Copyright © 2017 Elsevier B.V. All rights reserved.
NASA Astrophysics Data System (ADS)
Jana, Subrata; Samal, Prasanjit
2018-01-01
The behaviors of the positive definite Kohn-Sham kinetic energy density near the origin and at the asymptotic region play a major role in designing meta-generalized gradient approximations (meta-GGAs) for exchange in low-dimensional quantum systems. It is shown that near the origin of the parabolic quantum dot, the Kohn-Sham kinetic energy differs from its von Weizsäcker counterpart due to the p orbital contributions, whereas in the asymptotic region, the difference between the above two kinetic energy densities goes as ˜ρ/(r ) r2 . All these behaviors have been explored using the two-dimensional isotropic quantum harmonic oscillator as a test case. Several meta-GGA ingredients are then studied by making use of the above findings. Also, the asymptotic conditions for the exchange energy density and the potential at the meta-GGA level are proposed using the corresponding behaviors of the two kinetic energy densities.
Jana, Subrata; Samal, Prasanjit
2018-01-14
The behaviors of the positive definite Kohn-Sham kinetic energy density near the origin and at the asymptotic region play a major role in designing meta-generalized gradient approximations (meta-GGAs) for exchange in low-dimensional quantum systems. It is shown that near the origin of the parabolic quantum dot, the Kohn-Sham kinetic energy differs from its von Weizsäcker counterpart due to the p orbital contributions, whereas in the asymptotic region, the difference between the above two kinetic energy densities goes as ∼ρ(r)r 2 . All these behaviors have been explored using the two-dimensional isotropic quantum harmonic oscillator as a test case. Several meta-GGA ingredients are then studied by making use of the above findings. Also, the asymptotic conditions for the exchange energy density and the potential at the meta-GGA level are proposed using the corresponding behaviors of the two kinetic energy densities.
Shadjou, Nasrin; Hasanzadeh, Mohammad; Omari, Ali
2017-12-15
Rapid analyses of some water soluble vitamins (Vitamin B2, B9, and C) in commercial multi vitamins could be routinely performed in analytical laboratories. This study reports on the electropolymerization of a low toxic and biocompatible polymer "poly aspartic acid-graphene quantum dots" as a novel strategy for surface modification of glassy carbon electrode and preparation a new interface for measurement of selected vitamins in commercial multi vitamins. Electrochemical deposition, as a well-controlled synthesis procedure, has been used for subsequently layer-by-layer preparation of graphene quantum dots nanostructures on a poly aspartic acid using cyclic voltammetry techniques in the regime of -1.5 to 2 V. The field emission scanning electron microscopy indicated immobilization of graphene quantum dots onto poly aspartic acid film. The modified electrode possessed as an effective electroactivity for detection of water soluble vitamins by using cyclic voltammetry, chronoamperometry and differential pulse voltammetry. Enhancement of peak currents is ascribed to the fast heterogeneous electron transfer kinetics that arise from the synergistic coupling between the excellent properties of poly aspartic acid as semiconducting polymer, graphene quantum dots as high density of edge plane sites and chemical modification. Under the optimized analysis conditions, the prepared sensor for detection of VB2, VB9, and VC showed a low limit of quantification 0.22, 0.1, 0.1 μM, respectively. Copyright © 2017. Published by Elsevier Inc.
Comparing performance in discrete and continuous comparison tasks.
Leibovich, Tali; Henik, Avishai
2014-05-01
The approximate number system (ANS) theory suggests that all magnitudes, discrete (i.e., number of items) or continuous (i.e., size, density, etc.), are processed by a shared system and comply with Weber's law. The current study reexamined this notion by comparing performance in discrete (comparing numerosities of dot arrays) and continuous (comparisons of area of squares) tasks. We found that: (a) threshold of discrimination was higher for continuous than for discrete comparisons; (b) while performance in the discrete task complied with Weber's law, performance in the continuous task violated it; and (c) performance in the discrete task was influenced by continuous properties (e.g., dot density, dot cumulative area) of the dot array that were not predictive of numerosities or task relevant. Therefore, we propose that the magnitude processing system (MPS) is actually divided into separate (yet interactive) systems for discrete and continuous magnitude processing. Further subdivisions are discussed. We argue that cooperation between these systems results in a holistic comparison of magnitudes, one that takes into account continuous properties in addition to numerosities. Considering the MPS as two systems opens the door to new and important questions that shed light on both normal and impaired development of the numerical system.
NASA Astrophysics Data System (ADS)
Chen, Hsing-Ta; Ho, Tak-San; Chu, Shih-I.
The generalized Floquet approach is developed to study memory effect on electron transport phenomena through a periodically driven single quantum dot in an electrode-multi-level dot-electrode nanoscale quantum device. The memory effect is treated using a multi-function Lorentzian spectral density (LSD) model that mimics the spectral density of each electrode in terms of multiple Lorentzian functions. For the symmetric single-function LSD model involving a single-level dot, the underlying single-particle propagator is shown to be related to a 2×2 effective time-dependent Hamiltonian that includes both the periodic external field and the electrode memory effect. By invoking the generalized Van Vleck (GVV) nearly degenerate perturbation theory, an analytical Tien-Gordon-like expression is derived for arbitrary order multi-photon resonance d.c. tunneling current. Numerically converged simulations and the GVV analytical results are in good agreement, revealing the origin of multi-photon coherent destruction of tunneling and accounting for the suppression of the staircase jumps of d.c. current due to the memory effect. Specially, a novel blockade phenomenon is observed, showing distinctive oscillations in the field-induced current in the large bias voltage limit.
Near-identical star formation rate densities from Hα and FUV at redshift zero
NASA Astrophysics Data System (ADS)
Audcent-Ross, Fiona M.; Meurer, Gerhardt R.; Wong, O. I.; Zheng, Z.; Hanish, D.; Zwaan, M. A.; Bland-Hawthorn, J.; Elagali, A.; Meyer, M.; Putman, M. E.; Ryan-Weber, E. V.; Sweet, S. M.; Thilker, D. A.; Seibert, M.; Allen, R.; Dopita, M. A.; Doyle-Pegg, M. T.; Drinkwater, M.; Ferguson, H. C.; Freeman, K. C.; Heckman, T. M.; Kennicutt, R. C.; Kilborn, V. A.; Kim, J. H.; Knezek, P. M.; Koribalski, B.; Smith, R. C.; Staveley-Smith, L.; Webster, R. L.; Werk, J. K.
2018-06-01
For the first time both Hα and far-ultraviolet (FUV) observations from an H I-selected sample are used to determine the dust-corrected star formation rate density (SFRD: \\dot{ρ }) in the local Universe. Applying the two star formation rate indicators on 294 local galaxies we determine log(\\dot{ρ } _{Hα }) = -1.68 ^{+0.13}_{-0.05} [M⊙ yr-1 Mpc-3] and log(\\dot{ρ }_{FUV}) = -1.71 ^{+0.12}_{-0.13} [M⊙ yr-1 Mpc-3]. These values are derived from scaling Hα and FUV observations to the H I mass function. Galaxies were selected to uniformly sample the full H I mass (M_{H I}) range of the H I Parkes All-Sky Survey (M_{H I} ˜ 107 to ˜1010.7 M⊙). The approach leads to relatively larger sampling of dwarf galaxies compared to optically-selected surveys. The low H I mass, low luminosity and low surface brightness galaxy populations have, on average, lower Hα/FUV flux ratios than the remaining galaxy populations, consistent with the earlier results of Meurer. The near-identical Hα- and FUV-derived SFRD values arise with the low Hα/FUV flux ratios of some galaxies being offset by enhanced Hα from the brightest and high mass galaxy populations. Our findings confirm the necessity to fully sample the H I mass range for a complete census of local star formation to include lower stellar mass galaxies which dominate the local Universe.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Desjardins, Y.; Beeson, R.; Gosselin, A.
1989-04-01
Standard growing conditions in vitro (low light and CO{sub 2}) are not conducive to autotrophy. An experiment was conducted to improve photosynthesis in vitro in the hope of increasing survival in acclimatization. A factorial experiment was elaborated where CO{sub 2} and PPFD were supplied to in vitro cultured strawberry plants in the rooting stage. Activities of carboxylating enzymes were determined after 4 weeks of culture. The activities of non-activated and activated rubisco and PEP-Case were measured after extraction of the enzymes and a reaction with NaH{sup 14}CO{sub 3} followed by scintillation counting spectroscopy. High CO{sub 2} concentration significantly increased netmore » assimilation rates (NAR) by 165% over the control for both 1650 and 3000 ppm CO{sub 2}. High PPFD only increased NAR by 12 and 35% for 150 and 250 {mu}mol{center dot}m{sup {minus}2}{center dot}s{sup {minus}1} respectively over the control. Plants grown at 3000 ppm CO{sub 2} had the highest level of chlorophyll/g FW with 97% more than the control. The activity of PEP-Case was the highest at high light levels and high CO{sub 2} with rates of 1.65 for 1650 ppm versus 1.22 mmol CO{sub 2} mg{sup {minus}1} chl. h{sup {minus}1} at 250 {mu}mol{center dot}m{sup {minus}2}{center dot}s{sup {minus}1}. There was no difference in PEP activity at low light levels. The rubisco activity was lower at 1650 and 3000 ppm CO{sub 2}. Increases in NAR correlate more closely to the PEP-Case than to Rubisco activity. Physiological significance of high activity of PEP-Case over rubisco will be discussed.« less
NASA Astrophysics Data System (ADS)
Mandal, Debranjan; Goswami, Prasenjit N.; Rath, Arup K.
2017-03-01
Colloidal quantum dot (QD) solar cells have seen remarkable progress in recent past to reach the certified efficiency of 10.6%. Anatase titanium oxide (TiO2) is a widely studied n-type widow layer for the collection of photogenerated electrons in QD solar cells. Requirement of high temperature (˜500 °C) processing steps proved to be disadvantageous for its applications in flexible solar cells and roll to roll processing, and it also has adverse commercial implications. Here, we report that solar light exposure to low temperature processed (80 °C-150 °C) TiO2 and niobium doped TiO2 films leads to unprecedented enhancement in their electron densities and electron mobilities, which enables them to be used as efficient n-type layers in quantum dot solar cells. Such photoinduced high conducting states in these films show gradual decay over hours after the light bias is taken off and can be retrieved under solar illumination. On the contrary, TiO2 films processed at 500 °C show marginal photo induced enhancements in their characteristics. In bilayer configuration with PbS QDs, photovoltaic devices based on low temperature processed TiO2 films show improved performance over high temperature processed TiO2 films. The stability of photovoltaic devices also improved in low temperature processed TiO2 films under ambient working conditions.
Forming the First Stars in the Universe: The Fragmentation of Primordial Gas.
Bromm; Coppi; Larson
1999-12-10
In order to constrain the initial mass function of the first generation of stars (Population III), we investigate the fragmentation properties of metal-free gas in the context of a hierarchical model of structure formation. We investigate the evolution of an isolated 3 sigma peak of mass 2x106 M middle dot in circle that collapses at zcoll approximately 30 using smoothed particle hydrodynamics. We find that the gas dissipatively settles into a rotationally supported disk that has a very filamentary morphology. The gas in these filaments is Jeans unstable with MJ approximately 103 M middle dot in circle. Fragmentation leads to the formation of high-density (n>108 cm-3) clumps that subsequently grow in mass by accreting the surrounding gas and by merging with other clumps up to masses of approximately 104 M middle dot in circle. This suggests that the very first stars were rather massive. We explore the complex dynamics of the merging and tidal disruption of these clumps by following their evolution over a few dynamical times.
One-Step Synthesis of Boron Nitride Quantum Dots: Simple Chemistry Meets Delicate Nanotechnology.
Liu, Bingping; Yan, Shihai; Song, Zhongqian; Liu, Mengli; Ji, Xuqiang; Yang, Wenrong; Liu, Jingquan
2016-12-23
Herein, a conceptually new and straightforward aqueous route is described for the synthesis of hydroxyl- and amino-functionalized boron nitride quantum dots (BNQDs) with quantum yields (QY) as high as 18.3 % by using a facile bottom-up approach, in which a mixture of boric acid and ammonia solution was hydrothermally treated in one pot at 200 °C for 12 h. The functionalized BNQDs, with excellent photoluminescence properties, could be easily dispersed in an aqueous medium and applied as fluorescent probes for the detection of ferrous (Fe 2+ ) and ferric (Fe 3+ ) ions with excellent selectivity and low detection limits. The mechanisms for the hydrothermal reaction and fluorescence quenching were also simulated by using density functional theory (DFT), which confirmed the feasibility and advantages of this strategy. It provides a scalable and eco-friendly method for preparation of BNQDs with good dispersability and could also be generalized to the synthesis of other 2D quantum dots and nanoplates. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
NASA Technical Reports Server (NTRS)
Stoeger, W. R.; Pacholczyk, A. G.; Stepinski, T. F.
1992-01-01
The extent to which individual holes in a cluster of black holes with a mass spectrum can liberate and accrete the resulting material by tidally disrupting stars they encounter, or by capturing stars as binary companions is studied. It is found that the smaller black holes in 'the halo' of such clusters can adequately supply themselves to the level M-dot sub h or greater than 0.0001(M-dot sub h) sub crit, and up to 0.05(M-dot sub h)sub crit for the smallest holes, by tidal disruption, as long as the cluster is embedded in a distribution of stars of relatively high density (not less than 0.1M sub cl/cu pc), and as long as the entire cluster of stars is not too compact (not less than 0.5 pc). Consideration is given to modifications this 'internal' mode of supply introduces in the spectrum emitted by such black hole clusters, and to the current status of their viability as models for AGN and QSOs in light of dynamical studies by Quinlan and Shapiro (1987, 1989).
Path perception during rotation: influence of instructions, depth range, and dot density
NASA Technical Reports Server (NTRS)
Li, Li; Warren, William H Jr
2004-01-01
How do observers perceive their direction of self-motion when traveling on a straight path while their eyes are rotating? Our previous findings suggest that information from retinal flow and extra-retinal information about eye movements are each sufficient to solve this problem for both perception and active control of self-motion [Vision Res. 40 (2000) 3873; Psych. Sci. 13 (2002) 485]. In this paper, using displays depicting translation with simulated eye rotation, we investigated how task variables such as instructions, depth range, and dot density influenced the visual system's reliance on retinal vs. extra-retinal information for path perception during rotation. We found that path errors were small when observers expected to travel on a straight path or with neutral instructions, but errors increased markedly when observers expected to travel on a curved path. Increasing depth range or dot density did not improve path judgments. We conclude that the expectation of the shape of an upcoming path can influence the interpretation of the ambiguous retinal flow. A large depth range and dense motion parallax are not essential for accurate path perception during rotation, but reference objects and a large field of view appear to improve path judgments.
Waves, particles, and interactions in reduced dimensions
NASA Astrophysics Data System (ADS)
Zhang, Yiming
This thesis presents a set of experiments that study the interplay between the wave-particle duality of electrons and the interaction effects in systems of reduced dimensions. Both dc transport and measurements of current noise have been employed in the studies; in particular, techniques for efficiently measuring current noise have been developed specifically for these experiments. The first four experiments study current noise auto- and cross correlations in various mesoscopic devices, including quantum point contacts, single and double quantum dots, and graphene devices. In quantum point contacts, shot noise at zero magnetic field exhibits an asymmetry related to the 0.7 structure in conductance. The asymmetry in noise evolves smoothly into the symmetric signature of spin-resolved electron transmission at high field. Comparison to a phenomenological model with density-dependent level splitting yields good quantitative agreement. Additionally, a device-specific contribution to the finite-bias noise, particularly visible on conductance plateaus where shot noise vanishes, agrees with a model of bias-dependent electron heating. In a three-lead single quantum dot and a capacitively coupled double quantum dot, sign reversal of noise cross correlations have been observed in the Coulomb blockade regime, and found to be tunable by gate voltages and source-drain bias. In the limit of weak output tunneling, cross correlations in the three-lead dot are found to be proportional to the two-lead noise in excess of the Poissonian value. These results can be reproduced with master equation calculations that include multi-level transport in the single dot, and inter-dot charging energy in the double dot. Shot noise measurements in single-layer graphene devices reveal a Fano factor independent of carrier type and density, device geometry, and the presence of a p-n junction. This result contrasts with theory for ballistic graphene sheets and junctions, suggesting that the transport is disorder dominated. The next two experiments study magnetoresistance oscillations in electronic Fabry-Perot interferometers in the integer quantum Hall regime. Two types of resistance oscillations, as a function of perpendicular magnetic field and gate voltages, in two interferometers of different sizes can be distinguished by three experimental signatures. The oscillations observed in the small (2.0 mum2) device are understood to arise from Coulomb blockade, and those observed in the big (18 mum2) device from Aharonov-Bohm interference. Nonlinear transport in the big device reveals a checkerboard-like pattern of conductance oscillations as a function of dc bias and magnetic field. Edge-state velocities extracted from the checkerboard data are compared to model calculations and found to be consistent with a crossover from skipping orbits at low fields to E⃗ x B⃗ drift at high fields. Suppression of visibility as a function of bias and magnetic field is accounted for by including energy- and field-dependent dephasing of edge electrons.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Jasmine, P. Christina Lily; Peter, A. John, E-mail: a.john.peter@gmail.com
The dependence of electric field on the electronic and optical properties is investigated in a Cd{sub 0.8}Zn{sub 0.2}Se/ZnSe quantum dot. The hydrogenic binding energy, in the presence of electric field, is calculated with the spatial confinement effect. The electric field dependent optical gain with the photon energy is found using compact density matrix method. The results show that the electric field has a great influence on the optical properties of II-VI semiconductor quantum dot.
Helical quantum states in HgTe quantum dots with inverted band structures.
Chang, Kai; Lou, Wen-Kai
2011-05-20
We investigate theoretically the electron states in HgTe quantum dots (QDs) with inverted band structures. In sharp contrast to conventional semiconductor quantum dots, the quantum states in the gap of the HgTe QD are fully spin-polarized and show ringlike density distributions near the boundary of the QD and spin-angular momentum locking. The persistent charge currents and magnetic moments, i.e., the Aharonov-Bohm effect, can be observed in such a QD structure. This feature offers us a practical way to detect these exotic ringlike edge states by using the SQUID technique.
Measuring charge carrier diffusion in coupled colloidal quantum dot solids.
Zhitomirsky, David; Voznyy, Oleksandr; Hoogland, Sjoerd; Sargent, Edward H
2013-06-25
Colloidal quantum dots (CQDs) are attractive materials for inexpensive, room-temperature-, and solution-processed optoelectronic devices. A high carrier diffusion length is desirable for many CQD device applications. In this work we develop two new experimental methods to investigate charge carrier diffusion in coupled CQD solids under charge-neutral, i.e., undepleted, conditions. The methods take advantage of the quantum-size-effect tunability of our materials, utilizing a smaller-bandgap population of quantum dots as a reporter system. We develop analytical models of diffusion in 1D and 3D structures that allow direct extraction of diffusion length from convenient parametric plots and purely optical measurements. We measure several CQD solids fabricated using a number of distinct methods and having significantly different doping and surface ligand treatments. We find that CQD materials recently reported to achieve a certified power conversion efficiency of 7% with hybrid organic-inorganic passivation have a diffusion length of 80 ± 10 nm. The model further allows us to extract the lifetime, trap density, mobility, and diffusion coefficient independently in each material system. This work will facilitate further progress in extending the diffusion length, ultimately leading to high-quality CQD solid semiconducting materials and improved CQD optoelectronic devices, including CQD solar cells.
WisDOT asphaltic mixture new specifications implementation : field compaction and density.
DOT National Transportation Integrated Search
2016-06-01
The main research objectives of this study were to evaluate HMA Longitudinal Joint type, method and compaction data to produce specification recommendations that will ensure the highest density longitudinal joint, as well as evaluate and produce a sp...
Shear Thinning Near the Critical Point of Xenon
NASA Technical Reports Server (NTRS)
Zimmerli, Gregory A.; Berg, Robert F.; Moldover, Michael R.; Yao, Minwu
2008-01-01
We measured shear thinning, a viscosity decrease ordinarily associated with complex liquids, near the critical point of xenon. The data span a wide range of reduced shear rate: 10(exp -3) < gamma-dot tau < 700, where gamma-dot tau is the shear rate scaled by the relaxation time tau of critical fluctuations. The measurements had a temperature resolution of 0.01 mK and were conducted in microgravity aboard the Space Shuttle Columbia to avoid the density stratification caused by Earth's gravity. The viscometer measured the drag on a delicate nickel screen as it oscillated in the xenon at amplitudes 3 mu,m < chi (sub 0) >430 mu, and frequencies 1 Hz < omega/2 pi < 5 Hz. To separate shear thinning from other nonlinearities, we computed the ratio of the viscous force on the screen at gamma-dot tau to the force at gamma-dot tau approximates 0: C(sub gamma) is identical with F(chi(sub 0), omega tau, gamma-dot tau )/F)(chi(sub 0, omega tau, 0). At low frequencies, (omega tau)(exp 2) < gamma-dot tau, C(sub gamma) depends only on gamma-dot tau, as predicted by dynamic critical scaling. At high frequencies, (omega tau)(exp 2) > gamma-dot tau, C(sub gamma) depends also on both x(sub 0) and omega. The data were compared with numerical calculations based on the Carreau-Yasuda relation for complex fluids: eta(gamma-dot)/eta(0)=[1+A(sub gamma)|gamma-dot tau|](exp - chi(sub eta)/3+chi(sub eta)), where chi(sub eta) =0.069 is the critical exponent for viscosity and mode-coupling theory predicts A(sub gamma) =0.121. For xenon we find A(sub gamma) =0.137 +/- 0.029, in agreement with the mode coupling value. Remarkably, the xenon data close to the critical temperature T(sub c) were independent of the cooling rate (both above and below T(sub c) and these data were symmetric about T(sub c) to within a temperature scale factor. The scale factors for the magnitude of the oscillator s response differed from those for the oscillator's phase; this suggests that the surface tension of the two-phase domains affected the drag on the screen below T(sub c).
Magnetic field induced optical gain in a dilute nitride quaternary semiconductor quantum dot
NASA Astrophysics Data System (ADS)
Mageshwari, P. Uma; Peter, A. John; Lee, Chang Woo
2016-10-01
Effects of magnetic field strength on the electronic and optical properties are brought out in a Ga0.661In0.339N0.0554As0.9446/GaAs quantum dot for the applications of desired wavelength in opto-electronic devices. The band alignment is obtained using band anticrossing model and the model solid theory. The magnetic field dependent electron-heavy hole transition energies with the dot radius in a GaInNAs/GaAs quantum dot are investigated. The magnetic field induced oscillator strength as a function of dot radius is studied. The resonant peak values of optical absorption coefficients and the changes of refractive index with the application of magnetic field strength in a GaInNAs/GaAs quantum dot are obtained. The magnetic field induced threshold current density and the maximum optical gain are found in a GaInNAs/GaAs quantum dot. The results show that the optimum wavelength for fibre optical communication networks can be obtained with the variation of applied magnetic field strength and the outcomes may be useful for the design of efficient lasers based on the group III-N-V semiconductors.
Comparison of the Optical Properties of Graphene and Alkyl-terminated Si and Ge Quantum Dots.
de Weerd, Chris; Shin, Yonghun; Marino, Emanuele; Kim, Joosung; Lee, Hyoyoung; Saeed, Saba; Gregorkiewicz, Tom
2017-10-31
Semiconductor quantum dots are widely investigated due to their size dependent energy structure. In particular, colloidal quantum dots represent a promising nanomaterial for optoelectronic devices, such as photodetectors and solar cells, but also luminescent markers for biotechnology, among other applications. Ideal materials for these applications should feature efficient radiative recombination and absorption transitions, altogether with spectral tunability over a wide range. Group IV semiconductor quantum dots can fulfill these requirements and serve as an alternative to the commonly used direct bandgap materials containing toxic and/or rare elements. Here, we present optical properties of butyl-terminated Si and Ge quantum dots and compare them to those of graphene quantum dots, finding them remarkably similar. We investigate their time-resolved photoluminescence emission as well as the photoluminescence excitation and linear absorption spectra. We contemplate that their emission characteristics indicate a (semi-) resonant activation of the emitting channel; the photoluminescence excitation shows characteristics similar to those of a molecule. The optical density is consistent with band-to-band absorption processes originating from core-related states. Hence, these observations strongly indicate a different microscopic origin for absorption and radiative recombination in the three investigated quantum dot systems.
Li, Xiaoming; Zhang, Shengli; Kulinich, Sergei A.; Liu, Yanli; Zeng, Haibo
2014-01-01
Luminescent carbon dots (L-CDs) with high quantum yield value (44.7%) and controllable emission wavelengths were prepared via a facile hydrothermal method. Importantly, the surface states of the materials could be engineered so that their photoluminescence was either excitation-dependent or distinctly independent. This was achieved by changing the density of amino-groups on the L-CD surface. The above materials were successfully used to prepare multicolor L-CDs/polymer composites, which exhibited blue, green, and even white luminescence. In addition, the excellent excitation-independent luminescence of L-CDs prepared at low temperature was tested for detecting various metal ions. As an example, the detection limit of toxic Be2+ ions, tested for the first time, was as low as 23 μM.
Liu, Donghua; Chen, Xiaosong; Hu, Yibin; Sun, Tai; Song, Zhibo; Zheng, Yujie; Cao, Yongbin; Cai, Zhi; Cao, Min; Peng, Lan; Huang, Yuli; Du, Lei; Yang, Wuli; Chen, Gang; Wei, Dapeng; Wee, Andrew Thye Shen; Wei, Dacheng
2018-01-15
Graphene is regarded as a potential surface-enhanced Raman spectroscopy (SERS) substrate. However, the application of graphene quantum dots (GQDs) has had limited success due to material quality. Here, we develop a quasi-equilibrium plasma-enhanced chemical vapor deposition method to produce high-quality ultra-clean GQDs with sizes down to 2 nm directly on SiO 2 /Si, which are used as SERS substrates. The enhancement factor, which depends on the GQD size, is higher than conventional graphene sheets with sensitivity down to 1 × 10 -9 mol L -1 rhodamine. This is attributed to the high-quality GQDs with atomically clean surfaces and large number of edges, as well as the enhanced charge transfer between molecules and GQDs with appropriate diameters due to the existence of Van Hove singularities in the electronic density of states. This work demonstrates a sensitive SERS substrate, and is valuable for applications of GQDs in graphene-based photonics and optoelectronics.
NASA Astrophysics Data System (ADS)
Hersch, Roger David; Crété, Frédérique
2004-12-01
Dot gain is different when dots are printed alone, printed in superposition with one ink or printed in superposition with two inks. In addition, the dot gain may also differ depending on which solid ink the considered halftone layer is superposed. In a previous research project, we developed a model for computing the effective surface coverage of a dot according to its superposition conditions. In the present contribution, we improve the Yule-Nielsen modified Neugebauer model by integrating into it our effective dot surface coverage computation model. Calibration of the reproduction curves mapping nominal to effective surface coverages in every superposition condition is carried out by fitting effective dot surfaces which minimize the sum of square differences between the measured reflection density spectra and reflection density spectra predicted according to the Yule-Nielsen modified Neugebauer model. In order to predict the reflection spectrum of a patch, its known nominal surface coverage values are converted into effective coverage values by weighting the contributions from different reproduction curves according to the weights of the contributing superposition conditions. We analyze the colorimetric prediction improvement brought by our extended dot surface coverage model for clustered-dot offset prints, thermal transfer prints and ink-jet prints. The color differences induced by the differences between measured reflection spectra and reflection spectra predicted according to the new dot surface estimation model are quantified on 729 different cyan, magenta, yellow patches covering the full color gamut. As a reference, these differences are also computed for the classical Yule-Nielsen modified spectral Neugebauer model incorporating a single halftone reproduction curve for each ink. Taking into account dot surface coverages according to different superposition conditions considerably improves the predictions of the Yule-Nielsen modified Neugebauer model. In the case of offset prints, the mean difference between predictions and measurements expressed in CIE-LAB CIE-94 ΔE94 values is reduced at 100 lpi from 1.54 to 0.90 (accuracy improvement factor: 1.7) and at 150 lpi it is reduced from 1.87 to 1.00 (accuracy improvement factor: 1.8). Similar improvements have been observed for a thermal transfer printer at 600 dpi, at lineatures of 50 and 75 lpi. In the case of an ink-jet printer at 600 dpi, the mean ΔE94 value is reduced at 75 lpi from 3.03 to 0.90 (accuracy improvement factor: 3.4) and at 100 lpi from 3.08 to 0.91 (accuracy improvement factor: 3.4).
NASA Astrophysics Data System (ADS)
Hersch, Roger David; Crete, Frederique
2005-01-01
Dot gain is different when dots are printed alone, printed in superposition with one ink or printed in superposition with two inks. In addition, the dot gain may also differ depending on which solid ink the considered halftone layer is superposed. In a previous research project, we developed a model for computing the effective surface coverage of a dot according to its superposition conditions. In the present contribution, we improve the Yule-Nielsen modified Neugebauer model by integrating into it our effective dot surface coverage computation model. Calibration of the reproduction curves mapping nominal to effective surface coverages in every superposition condition is carried out by fitting effective dot surfaces which minimize the sum of square differences between the measured reflection density spectra and reflection density spectra predicted according to the Yule-Nielsen modified Neugebauer model. In order to predict the reflection spectrum of a patch, its known nominal surface coverage values are converted into effective coverage values by weighting the contributions from different reproduction curves according to the weights of the contributing superposition conditions. We analyze the colorimetric prediction improvement brought by our extended dot surface coverage model for clustered-dot offset prints, thermal transfer prints and ink-jet prints. The color differences induced by the differences between measured reflection spectra and reflection spectra predicted according to the new dot surface estimation model are quantified on 729 different cyan, magenta, yellow patches covering the full color gamut. As a reference, these differences are also computed for the classical Yule-Nielsen modified spectral Neugebauer model incorporating a single halftone reproduction curve for each ink. Taking into account dot surface coverages according to different superposition conditions considerably improves the predictions of the Yule-Nielsen modified Neugebauer model. In the case of offset prints, the mean difference between predictions and measurements expressed in CIE-LAB CIE-94 ΔE94 values is reduced at 100 lpi from 1.54 to 0.90 (accuracy improvement factor: 1.7) and at 150 lpi it is reduced from 1.87 to 1.00 (accuracy improvement factor: 1.8). Similar improvements have been observed for a thermal transfer printer at 600 dpi, at lineatures of 50 and 75 lpi. In the case of an ink-jet printer at 600 dpi, the mean ΔE94 value is reduced at 75 lpi from 3.03 to 0.90 (accuracy improvement factor: 3.4) and at 100 lpi from 3.08 to 0.91 (accuracy improvement factor: 3.4).
Ensemble Density Functional Approach to the Quantum Hall Effect
NASA Astrophysics Data System (ADS)
Heinonen, O.
1997-03-01
The fractional quantum Hall effect (FQHE) occurs in a two-dimensional electron gas of density n when a strong magnetic field perpendicular to the plane of the electron gas takes on certain strengths B(n). At these magnetic field strengths the system is incompressible, i.e., there is a finite cost in energy for creating charge density fluctuations in the bulk. Even so the boundary of the electron gas supports gapless modes of density waves. The bulk energy gap arises because of the strong electron-electron interactions. There are very good models for infinite homogeneous systems and for the gapless excitations of the boundary of the electron gas. But in order to explain experiments on quantum Hall systems, including Hall bars and quantum dots, new approaches are needed which can accurately describe inhomogeneous systems, including Landau level mixing and the spin degree of freedom. One possibility is an ensemble density functional theory approach that we have developed.(O. Heinonen, M.I. Lubin, and M.D. Johnson, Phys. Rev. Lett. 75), 4110 (1995)(O. Heinonen, M.I. Lubin, and M.D. Johnson, Int. J. Quant. Chem, December 1996) We have applied this to study edge reconstructions of spin-polarized quantum dots. The results for a six-electron test case are in excellent agreement with numerical diagonalizations. For larger systems, compressible and incompressible strips appear as the magnetic field is increased from the region in which a dot forms a compact so-called maximum density droplet. We have recently included spin degree of freedom to study the stability of a maximum density droplet, and charge-spin textures in inhomogeneous systems. As an example, when the Zeeman coupling is decreased, we find that the maximum density droplet develops a spin-structured edge instability. This implies that the spin degree of freedom may play a significant role in the study of edge modes at low or moderate magnetic fields.
Study of Polyurethane Foaming Dynamics Using a Heat Flow Meter
NASA Astrophysics Data System (ADS)
Koniorczyk, P.; Trzyna, M.; Zmywaczyk, J.; Zygmunt, B.; Preiskorn, M.
2017-05-01
This work presents the results of the study concerning the effects of fillers addition on the heat flux density \\dot{q}( t ) of foaming of polyurethane-polystyrene porous composite (PSUR) and describes the dynamics of this process during the first 600 s. This foaming process resulted in obtaining porous materials that were based on HFC 365/225 blown rigid polyurethane foam (PUR) matrix, which contained thermoplastic expandable polystyrene (EPS) beads as the filler. In PSUR composites, the EPS beads were expanded after being heated to a temperature above the glass transition temperature of EPS and vaporing gas incorporated inside, by using the heat of exothermic reaction of polyol with isocyanate. From the start (t=0) to the end of the PSUR composite foaming process (t=tk), \\dot{q}( t ) was measured with the use of the heat flow meter. For the purpose of the study two PUR systems were selected: one with high and one with low heat density of foaming process q. EPS beads were selected from the same manufacturer with large and small diameter. The mass fraction of EPS in PSUR foam varied during the measurements. Additionally, a study of volume fractions of expanded EPS phase in PSUR foams as a function of mass fractions of EPS was conducted. In order to verify effects of the EPS addition on the heat flux density during PSUR foaming process, the thermal conductivity measurements were taken.
NASA Astrophysics Data System (ADS)
Field, Kevin G.; Briggs, Samuel A.; Hu, Xunxiang; Yamamoto, Yukinori; Howard, Richard H.; Sridharan, Kumar
2017-01-01
FeCrAl alloys are an attractive class of materials for nuclear power applications because of their increased environmental compatibility compared with more traditional nuclear materials. Preliminary studies into the radiation tolerance of FeCrAl alloys under accelerated neutron testing between 300 and 400 °C have shown post-irradiation microstructures containing dislocation loops and a Cr-rich α‧ phase. Although these initial studies established the post-irradiation microstructures, there was little to no focus on understanding the influence of pre-irradiation microstructures on this response. In this study, a well-annealed commercial FeCrAl alloy, Alkrothal 720, was neutron irradiated to 1.8 displacements per atom (dpa) at 382 °C and then the effect of random high-angle grain boundaries on the spatial distribution and size of a〈100〉 dislocation loops, a/2〈111〉 dislocation loops, and black dot damage was analyzed using on-zone scanning transmission electron microscopy. Results showed a clear heterogeneous dislocation loop formation with a/2〈111〉 dislocation loops showing an increased number density and size, black dot damage showing a significant number density decrease, and a〈100〉 dislocation loops exhibiting an increased size in the vicinity of the grain boundary. These results suggest the importance of the pre-irradiation microstructure and, specifically, defect sink density spacing to the radiation tolerance of FeCrAl alloys.
DEVELOPMENT OF IN-PLACE DENSITY METHOD FOR COLD IN-PLACE RECYCLING
DOT National Transportation Integrated Search
2018-01-01
This report presents the results of a research study funded by the Nevada DOT and the SOLARIS University Transportation Center. The research developed a method for measuring the in-place density of the cold in-place recycled (CIR) layer immediately a...
Conjugate-gradient optimization method for orbital-free density functional calculations.
Jiang, Hong; Yang, Weitao
2004-08-01
Orbital-free density functional theory as an extension of traditional Thomas-Fermi theory has attracted a lot of interest in the past decade because of developments in both more accurate kinetic energy functionals and highly efficient numerical methodology. In this paper, we developed a conjugate-gradient method for the numerical solution of spin-dependent extended Thomas-Fermi equation by incorporating techniques previously used in Kohn-Sham calculations. The key ingredient of the method is an approximate line-search scheme and a collective treatment of two spin densities in the case of spin-dependent extended Thomas-Fermi problem. Test calculations for a quartic two-dimensional quantum dot system and a three-dimensional sodium cluster Na216 with a local pseudopotential demonstrate that the method is accurate and efficient. (c) 2004 American Institute of Physics.
Exciton recombination dynamics in CdSe nanowires: bimolecular to three-carrier Auger kinetics.
Robel, István; Bunker, Bruce A; Kamat, Prashant V; Kuno, Masaru
2006-07-01
Ultrafast relaxation dynamics of charge carriers in CdSe quantum wires with diameters between 6 and 8 nm are studied as a function of carrier density. At high electron-hole pair densities above 10(19) cm(-3) the dominant process for carrier cooling is the "bimolecular" Auger recombination of one-dimensional (1D) excitons. However, below this excitation level an unexpected transition from a bimolecular (exciton-exciton) to a three-carrier Auger relaxation mechanism occurs. Thus, depending on excitation intensity, electron-hole pair relaxation dynamics in the nanowires exhibit either 1D or 0D (quantum dot) character. This dual nature of the recovery kinetics defines an optimal intensity for achieving optical gain in solution-grown nanowires given the different carrier-density-dependent scaling of relaxation rates in either regime.
Electrochemical and Capacitive Properties of Carbon Dots/Reduced Graphene Oxide Supercapacitors.
Dang, Yong-Qiang; Ren, Shao-Zhao; Liu, Guoyang; Cai, Jiangtao; Zhang, Yating; Qiu, Jieshan
2016-11-14
There is much recent interest in graphene-based composite electrode materials because of their excellent mechanical strengths, high electron mobilities, and large specific surface areas. These materials are good candidates for applications in supercapacitors. In this work, a new graphene-based electrode material for supercapacitors was fabricated by anchoring carbon dots (CDs) on reduced graphene oxide (rGO). The capacitive properties of electrodes in aqueous electrolytes were systematically studied by galvanostatic charge-discharge measurements, cyclic voltammetry, and electrochemical impedance spectroscopy. The capacitance of rGO was improved when an appropriate amount of CDs were added to the material. The CD/rGO electrode exhibited a good reversibility, excellent rate capability, fast charge transfer, and high specific capacitance in 1 M H₂SO₄. Its capacitance was as high as 211.9 F/g at a current density of 0.5 A/g. This capacitance was 74.3% higher than that of a pristine rGO electrode (121.6 F/g), and the capacitance of the CD/rGO electrode retained 92.8% of its original value after 1000 cycles at a CDs-to-rGO ratio of 5:1.
Sensing behavior of a graphene quantum dot phenalenyl towards toxic gases
NASA Astrophysics Data System (ADS)
Sharma, Vaishali; Narayan, Som; Dabhi, Shweta D.; Shinde, Satyam; Jha, Prafulla K.
2018-04-01
In the present work, by studying the interaction of graphene quantum dot (GQD) Phenalenylwith toxic gases hydrogen cyanide (HCN) and phosgene (COCl2) using density functional theory, we are aiming to evaluate the possibility of using GQD phenalenyl in the detection of HCN and COCl2. Owing to strong interactions between HCN/COCl2 and the GQD Phenalenyl, dramatic changes in the electronic properties of the graphene quantum dots together with highest occupied molecular orbitals and lowest unoccupied molecularorbitals (HOMO-LUMO) gap variationsare observed. The findings show that the GQD phenalenyl can be used as chemical nanosensor to detect HCN and COCl2 toxic gases.
Covalent functionalized black phosphorus quantum dots
NASA Astrophysics Data System (ADS)
Scotognella, Francesco; Kriegel, Ilka; Sassolini, Simone
2018-01-01
Black phosphorus (BP) nanostructures enable a new strategy to tune the electronic and optical properties of this atomically thin material. In this paper we show, via density functional theory calculations, the possibility to modify the optical properties of BP quantum dots via covalent functionalization. The quantum dot selected in this study has chemical formula P24H12 and has been covalent functionalized with one or more benzene rings or anthracene. The effect of functionalization is highlighted in the absorption spectra, where a red shift of the absorption is noticeable. The shift can be ascribed to an electron delocalization in the black phosphorus/organic molecule nanostructure.
NASA Astrophysics Data System (ADS)
Zhang, Zhen-Yu; Wang, Hai-Yu; Zhang, Yan-Xia; Hao, Ya-Wei; Sun, Chun; Zhang, Yu; Gao, Bing-Rong; Chen, Qi-Dai; Sun, Hong-Bo
2016-06-01
Hybrid metal halide perovskites have been paid enormous attentions in photophysics research, whose excellent performances were attributed to their intriguing charge carriers proprieties. However, it still remains far from satisfaction in the comprehensive understanding of perovskite charge-transport properities, especially about trap-assisted recombination process. In this Letter, through time-resolved transient absorption (TA) and photoluminescence (PL) measurements, we provided a relative comprehensive investigation on the charge carriers recombination dynamics of CH3NH3PbBr3 (MAPbBr3) perovskite films and quantum dots (QDs), especially about trap-assisted recombination. It was found that the integral recombination mode of MAPbBr3 films was highly sensitive to the density distribution of generated charge carriers and trap states. Additional, Trap effects would be gradually weakened with elevated carrier densities. Furthermore, the trap-assisted recombination can be removed from MAPbBr3 QDs through its own surface passivation mechanism and this specialty may render the QDs as a new material in illuminating research. This work provides deeper physical insights into the dynamics processes of MAPbBr3 materials and paves a way toward more light-harvesting applications in future.
Self-assembled indium arsenide quantum dots: Structure, formation dynamics, optical properties
NASA Astrophysics Data System (ADS)
Lee, Hao
1998-12-01
In this dissertation, we investigate the properties of InAs/GaAs quantum dots grown by molecular beam epitaxy. The structure and formation dynamics of InAs quantum dots are studied by a variety of structural characterization techniques. Correlations among the growth conditions, the structural characteristics, and the observed optical properties are explored. The most fundamental structural characteristic of the InAs quantum dots is their shape. Through detailed study of the reflection high energy electron diffraction patterns, we determined that self-assembled InAs islands possess a pyramidal shape with 136 bounding facets. Cross-sectional transmission electron microscopy images and atomic force microscopy images strongly support this model. The 136 model we proposed is the first model that is consistent with all reported shape features determined using different methods. The dynamics of coherent island formation is also studied with the goal of establishing the factors most important in determining the size, density, and the shape of self- organized InAs quantum dots. Our studies clearly demonstrate the roles that indium diffusion and desorption play in InAs island formation. An unexpected finding (from atomic force microscopy images) was that the island size distribution bifurcated during post- growth annealing. Photoluminescence spectra of the samples subjected to in-situ annealing prior to the growth of a capping layer show a distinctive double-peak feature. The power-dependence and temperature-dependence of the photoluminescence spectra reveals that the double- peak emission is associated with the ground-state transition of islands in two different size branches. These results confirm the island size bifurcation observed from atomic force microscopy images. The island size bifurcation provides a new approach to the control and manipulation of the island size distribution. Unexpected dependence of the photoluminescence line-shape on sample temperature and pump intensity was observed for samples grown at relatively high substrate temperatures. The behavior is modeled and explained in terms of competition between two overlapping transitions. The study underscores that the growth conditions can have a dramatic impact on the optical properties of the quantum dots. This dissertation includes both my previously published and unpublished authored materials.
2012-01-01
Issues of Ge hut cluster array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Dynamics of the RHEED patterns in the process of Ge hut array formation is investigated at low and high temperatures of Ge deposition. Different dynamics of RHEED patterns during the deposition of Ge atoms in different growth modes is observed, which reflects the difference in adatom mobility and their ‘condensation’ fluxes from Ge 2D gas on the surface for different modes, which in turn control the nucleation rates and densities of Ge clusters. Data of HRTEM studies of multilayer Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect films. Heteroepitaxial Si p–i–n-diodes with multilayer stacks of Ge/Si(001) quantum dot dense arrays built in intrinsic domains have been investigated and found to exhibit the photo-emf in a wide spectral range from 0.8 to 5 μm. An effect of wide-band irradiation by infrared light on the photo-emf spectra has been observed. Photo-emf in different spectral ranges has been found to be differently affected by the wide-band irradiation. A significant increase in photo-emf is observed in the fundamental absorption range under the wide-band irradiation. The observed phenomena are explained in terms of positive and neutral charge states of the quantum dot layers and the Coulomb potential of the quantum dot ensemble. A new design of quantum dot infrared photodetectors is proposed. By using a coherent source spectrometer, first measurements of terahertz dynamical conductivity (absorptivity) spectra of Ge/Si(001) heterostructures were performed at frequencies ranged from 0.3 to 1.2 THz in the temperature interval from 300 to 5 K. The effective dynamical conductivity of the heterostructures with Ge quantum dots has been discovered to be significantly higher than that of the structure with the same amount of bulk germanium (not organized in an array of quantum dots). The excess conductivity is not observed in the structures with the Ge coverage less than 8 Å. When a Ge/Si(001) sample is cooled down the conductivity of the heterostructure decreases. PMID:22824144
Yuryev, Vladimir A; Arapkina, Larisa V; Storozhevykh, Mikhail S; Chapnin, Valery A; Chizh, Kirill V; Uvarov, Oleg V; Kalinushkin, Victor P; Zhukova, Elena S; Prokhorov, Anatoly S; Spektor, Igor E; Gorshunov, Boris P
2012-07-23
: Issues of Ge hut cluster array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Dynamics of the RHEED patterns in the process of Ge hut array formation is investigated at low and high temperatures of Ge deposition. Different dynamics of RHEED patterns during the deposition of Ge atoms in different growth modes is observed, which reflects the difference in adatom mobility and their 'condensation' fluxes from Ge 2D gas on the surface for different modes, which in turn control the nucleation rates and densities of Ge clusters. Data of HRTEM studies of multilayer Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect films.Heteroepitaxial Si p-i-n-diodes with multilayer stacks of Ge/Si(001) quantum dot dense arrays built in intrinsic domains have been investigated and found to exhibit the photo-emf in a wide spectral range from 0.8 to 5 μm. An effect of wide-band irradiation by infrared light on the photo-emf spectra has been observed. Photo-emf in different spectral ranges has been found to be differently affected by the wide-band irradiation. A significant increase in photo-emf is observed in the fundamental absorption range under the wide-band irradiation. The observed phenomena are explained in terms of positive and neutral charge states of the quantum dot layers and the Coulomb potential of the quantum dot ensemble. A new design of quantum dot infrared photodetectors is proposed.By using a coherent source spectrometer, first measurements of terahertz dynamical conductivity (absorptivity) spectra of Ge/Si(001) heterostructures were performed at frequencies ranged from 0.3 to 1.2 THz in the temperature interval from 300 to 5 K. The effective dynamical conductivity of the heterostructures with Ge quantum dots has been discovered to be significantly higher than that of the structure with the same amount of bulk germanium (not organized in an array of quantum dots). The excess conductivity is not observed in the structures with the Ge coverage less than 8 Å. When a Ge/Si(001) sample is cooled down the conductivity of the heterostructure decreases.
Snyder, Adam C.; Foxe, John J.
2010-01-01
Retinotopically specific increases in alpha-band (~10 Hz) oscillatory power have been strongly implicated in the suppression of processing for irrelevant parts of the visual field during the deployment of visuospatial attention. Here, we asked whether this alpha suppression mechanism also plays a role in the nonspatial anticipatory biasing of feature-based attention. Visual word cues informed subjects what the task-relevant feature of an upcoming visual stimulus (S2) was, while high-density electroencephalographic recordings were acquired. We examined anticipatory oscillatory activity in the Cue-to-S2 interval (~2 s). Subjects were cued on a trial-by-trial basis to attend to either the color or direction of motion of an upcoming dot field array, and to respond when they detected that a subset of the dots differed from the majority along the target feature dimension. We used the features of color and motion, expressly because they have well known, spatially separated cortical processing areas, to distinguish shifts in alpha power over areas processing each feature. Alpha power from dorsal regions increased when motion was the irrelevant feature (i.e., color was cued), and alpha power from ventral regions increased when color was irrelevant. Thus, alpha-suppression mechanisms appear to operate during feature-based selection in much the same manner as has been shown for space-based attention. PMID:20237273
Nguyen, H P T; Zhang, S; Cui, K; Han, X; Fathololoumi, S; Couillard, M; Botton, G A; Mi, Z
2011-05-11
Full-color, catalyst-free InGaN/GaN dot-in-a-wire light-emitting diodes (LEDs) were monolithically grown on Si(111) by molecular beam epitaxy, with the emission characteristics controlled by the dot properties in a single epitaxial growth step. With the use of p-type modulation doping in the dot-in-a-wire heterostructures, we have demonstrated the most efficient phosphor-free white LEDs ever reported, which exhibit an internal quantum efficiency of ∼56.8%, nearly unaltered CIE chromaticity coordinates with increasing injection current, and virtually zero efficiency droop at current densities up to ∼640 A/cm(2). The remarkable performance is attributed to the superior three-dimensional carrier confinement provided by the electronically coupled dot-in-a-wire heterostructures, the nearly defect- and strain-free GaN nanowires, and the significantly enhanced hole transport due to the p-type modulation doping.
NASA Astrophysics Data System (ADS)
Sorokin, S. V.; Sedova, I. V.; Belyaev, K. G.; Rakhlin, M. V.; Yagovkina, M. A.; Toropov, A. A.; Ivanov, S. V.
2018-03-01
Data on the molecular beam epitaxy (MBE) technology, design, and luminescent properties of heterostructures with CdTe/Zn(Mg)(Se)Te quantum dots on InAs(001) substrates are presented. X-ray diffraction has been used to study short-period ZnTe/MgTe/MgSe superlattices used as wide-bandgap barriers in structures with CdTe/ZnTe quantum dots for the effective confinement of holes. It is shown that the design of these superlattices must take into account the replacement of Te atoms by selenium on MgSe/ZnTe and MgTe/MgSe heterointerfaces. Heterostructures with CdTe/Zn(Mg)(Se)Te quantum dots exhibit photoluminescence at temperatures up to 300 K. The spectra of microphotoluminescence at T = 10 K display a set of emission lines from separate CdTe/ZnTe quantum dots, the surface density of which is estimated at 1010 cm-2.
Tuning Single Quantum Dot Emission with a Micromirror.
Yuan, Gangcheng; Gómez, Daniel; Kirkwood, Nicholas; Mulvaney, Paul
2018-02-14
The photoluminescence of single quantum dots fluctuates between bright (on) and dark (off) states, also termed fluorescence intermittency or blinking. This blinking limits the performance of quantum dot-based devices such as light-emitting diodes and solar cells. However, the origins of the blinking remain unresolved. Here, we use a movable gold micromirror to determine both the quantum yield of the bright state and the orientation of the excited state dipole of single quantum dots. We observe that the quantum yield of the bright state is close to unity for these single QDs. Furthermore, we also study the effect of a micromirror on blinking, and then evaluate excitation efficiency, biexciton quantum yield, and detection efficiency. The mirror does not modify the off-time statistics, but it does change the density of optical states available to the quantum dot and hence the on times. The duration of the on times can be lengthened due to an increase in the radiative recombination rate.
Electric transport through circular graphene quantum dots: Presence of disorder
NASA Astrophysics Data System (ADS)
Pal, G.; Apel, W.; Schweitzer, L.
2011-08-01
The electronic states of an electrostatically confined cylindrical graphene quantum dot and the electric transport through this device are studied theoretically within the continuum Dirac-equation approximation and compared with numerical results obtained from a tight-binding lattice description. A spectral gap, which may originate from strain effects, additional adsorbed atoms, or substrate-induced sublattice-symmetry breaking, allows for bound and scattering states. As long as the diameter of the dot is much larger than the lattice constant, the results of the continuum and the lattice model are in very good agreement. We also investigate the influence of a sloping dot-potential step, of on-site disorder along the sample edges, of uncorrelated short-range disorder potentials in the bulk, and of random magnetic fluxes that mimic ripple disorder. The quantum dot's spectral and transport properties depend crucially on the specific type of disorder. In general, the peaks in the density of bound states are broadened but remain sharp only in the case of edge disorder.
Differences in apparent straightness of dot and line stimuli.
NASA Technical Reports Server (NTRS)
Parlee, M. B.
1972-01-01
An investigation has been made of anisotropic responses to contoured and noncontoured stimuli to obtain an insight into the way these stimuli are processed. For this purpose, eight subjects judged the alignment of minimally contoured (3 dot) and contoured (line) stimuli. Stimuli, presented to each eye separately, vertically subtended either 8 or 32 deg visual angle and were located 10 deg left, center, or 10 deg right in the visual field. Location-dependent deviations from physical straightness were larger for dot stimuli than for lines. The results were the same for the two eyes. In a second experiment, subjects judged the alignment of stimuli composed of different densities of dots. Apparent straightness for these stimuli was the same as for lines. The results are discussed in terms of alternative mechanisms for analysis of contoured and minimally contoured stimuli.
Photoconductive gain and quantum efficiency of remotely doped Ge/Si quantum dot photodetectors
NASA Astrophysics Data System (ADS)
Yakimov, A. I.; Kirienko, V. V.; Armbrister, V. A.; Bloshkin, A. A.; Dvurechenskii, A. V.; Shklyaev, A. A.
2016-10-01
We study the effect of quantum dot charging on the mid-infrared photocurrent, optical gain, hole capture probability, and absorption quantum efficiency in remotely delta-doped Ge/Si quantum dot photodetectors. The dot occupation with holes is controlled by varying dot and doping densities. From our investigations of samples doped to contain from about one to nine holes per dot we observe an over 10 times gain enhancement and similar suppression of the hole capture probability with increased carrier population. The data are explained by quenching the capture process and increasing the photoexcited hole lifetime due to formation of the repulsive Coulomb potential of the extra holes inside the quantum dots. The normal incidence quantum efficiency is found to be strongly asymmetric with respect to applied bias polarity. Based on the polarization-dependent absorption measurements it is concluded that, at a positive voltage, when holes move toward the nearest δ-doping plane, photocurrent is originated from the bound-to-continuum transitions of holes between the ground state confined in Ge dots and the extended states of the Si matrix. At a negative bias polarity, the photoresponse is caused by optical excitation to a quasibound state confined near the valence band edge with subsequent tunneling to the Si valence band. In a latter case, the possibility of hole transfer into continuum states arises from the electric field generated by charge distributed between quantum dots and delta-doping planes.
Refractive-Index Tuning of Highly Fluorescent Carbon Dots.
Kumar, Vijay Bhooshan; Sahu, Amit Kumar; Mohsin, Abu S M; Li, Xiangping; Gedanken, Aharon
2017-08-30
In this manuscript, we report the refractive-index (RI) modulation of various concentrations of nitrogen-doped carbon dots (N@C-dots) embedded in poly(vinyl alcohol) (PVA) polymer. The dispersion and size distribution of N@C-dots embedded within PVA have been investigated using electron microscopy. The RI of PVA-N@C-dots can be enhanced by increasing the doping concentration of highly fluorescent C-dots (quantum yield 44%). This is demonstrated using ultraviolet-visible (UV-visible), photoluminscence, Raman, and Fourier transform infrared (FTIR) spectroscopy measurements. The Mie scattering of light on N@C-dots was applied for developing the relationship between RI tuning and absorption cross section of N@C-dots. The extinction cross section of N@C-dot thin films can be rapidly enhanced by either tuning the RI or increasing the concentration of N@C-dots. The developed method can be used as effective RI contrast for various applications such as holography creation and bioimaging.
2011-12-01
communication links using VCSEL arrays [1, 2], medical imaging using super luminescent diodes [3], and tunable lasers capable of remotely sensing...increase the efficiency of solar cells [6, 7, 8], vastly improve photo detector sensitivity [9], and provide optical memory storage densities predicted...semiconductor lasers” Applied Physics B: Lasers and Optics, Volume 90, Number 2, 2008, Pages 339-343. 6. Nozik, A.J. “Quantum dot solar cells
NASA Technical Reports Server (NTRS)
Fijany, Amir; Toomarian, Benny N.
2000-01-01
There has been significant improvement in the performance of VLSI devices, in terms of size, power consumption, and speed, in recent years and this trend may also continue for some near future. However, it is a well known fact that there are major obstacles, i.e., physical limitation of feature size reduction and ever increasing cost of foundry, that would prevent the long term continuation of this trend. This has motivated the exploration of some fundamentally new technologies that are not dependent on the conventional feature size approach. Such technologies are expected to enable scaling to continue to the ultimate level, i.e., molecular and atomistic size. Quantum computing, quantum dot-based computing, DNA based computing, biologically inspired computing, etc., are examples of such new technologies. In particular, quantum-dots based computing by using Quantum-dot Cellular Automata (QCA) has recently been intensely investigated as a promising new technology capable of offering significant improvement over conventional VLSI in terms of reduction of feature size (and hence increase in integration level), reduction of power consumption, and increase of switching speed. Quantum dot-based computing and memory in general and QCA specifically, are intriguing to NASA due to their high packing density (10(exp 11) - 10(exp 12) per square cm ) and low power consumption (no transfer of current) and potentially higher radiation tolerant. Under Revolutionary Computing Technology (RTC) Program at the NASA/JPL Center for Integrated Space Microelectronics (CISM), we have been investigating the potential applications of QCA for the space program. To this end, exploiting the intrinsic features of QCA, we have designed novel QCA-based circuits for co-planner (i.e., single layer) and compact implementation of a class of data permutation matrices, a class of interconnection networks, and a bit-serial processor. Building upon these circuits, we have developed novel algorithms and QCA-based architectures for highly parallel and systolic computation of signal/image processing applications, such as FFT and Wavelet and Wlash-Hadamard Transforms.
Studies of quantum dots in the quantum Hall regime
NASA Astrophysics Data System (ADS)
Goldmann, Eyal
We present two studies of quantum dots in the quantum Hall regime. In the first study, presented in Chapter 3, we investigate the edge reconstruction phenomenon believed to occur when the quantum dot filling fraction is n≲1 . Our approach involves the examination of large dots (≤40 electrons) using a partial diagonalization technique in which the occupancies of the deep interior orbitals are frozen. To interpret the results of this calculation, we evaluate the overlap between the diagonalized ground state and a set of trial wavefunctions which we call projected necklace (PN) states. A PN state is simply the angular momentum projection of a maximum density droplet surrounded by a ring of localized electrons. Our calculations reveal that PN states have up to 99% overlap with the diagonalized ground states, and are lower in energy than the states identified in Chamon and Wen's study of the edge reconstruction. In the second study, presented in Chapter 4, we investigate quantum dots in the fractional quantum Hall regime using a Hartree formulation of composite fermion theory. We find that under appropriate conditions, the chemical potential of the dots oscillates periodically with B due to the transfer of composite fermions between quasi-Landau bands. This effect is analogous the addition spectrum oscillations which occur in quantum dots in the integer quantum Hall regime. Period f0 oscillations are found in sharply confined dots with filling factors nu = 2/5 and nu = 2/3. Period 3 f0 oscillations are found in a parabolically confined nu = 2/5 dot. More generally, we argue that the oscillation period of dots with band pinning should vary continuously with B, whereas the period of dots without band pinning is f0 .
Temperature stability of static and dynamic properties of 1.55 µm quantum dot lasers.
Abdollahinia, A; Banyoudeh, S; Rippien, A; Schnabel, F; Eyal, O; Cestier, I; Kalifa, I; Mentovich, E; Eisenstein, G; Reithmaier, J P
2018-03-05
Static and dynamic properties of InP-based 1.55 µm quantum dot (QD) lasers were investigated. Due to the reduced size inhomogeneity and a high dot density of the newest generation of 1.55 µm QD gain materials, ridge waveguide lasers (RWG) exhibit improved temperature stability and record-high modulation characteristics. Detailed results are shown for the temperature dependence of static properties including threshold current, voltage-current characteristics, external differential efficiency and emission wavelength. Similarly, small and large signal modulations were found to have only minor dependences on temperature. Moreover, we show the impact of the active region design and the cavity length on the temperature stability. Measurements were performed in pulsed and continuous wave operation. High characteristic temperatures for the threshold current were obtained with T 0 values of 144 K (15 - 60 °C), 101 K (60 - 110 °C) and 70 K up to 180 °C for a 900-µm-long RWG laser comprising 8 QD layers. The slope efficiency in these lasers is nearly independent of temperature showing a T 1 value of more than 900 K up to 110 °C. Due to the high modal gain, lasers with a cavity length of 340 µm reached new record modulation bandwidths of 17.5 GHz at 20 °C and 9 GHz at 80 °C, respectively. These lasers were modulated at 26 GBit/s in the non-return to zero format at 80 °C and at 25 GBaud using a four-level pulse amplitude format at 21 °C.
Selective LPCVD growth of graphene on patterned copper and its growth mechanism
NASA Astrophysics Data System (ADS)
Zhang, M.; Huang, B.-C.; Wang, Y.; Woo, J. C. S.
2016-12-01
Copper-catalyzed graphene low-pressure chemical-vapor deposition (LPCVD) growth has been regarded as a viable solution towards its integration to CMOS technology, and the wafer-bonding method provides a reliable alternative for transferring the selective graphene grown on a patterned metal film for IC manufacturing. In this paper, selective LPCVD graphene growth using patterned copper dots has been studied. The Raman spectra of grown films have demonstrated large dependence on the growth conditions. To explain the results, the growth mechanisms based on surface adsorption and copper-vapor-assisted growth are investigated by the comparison between the blanket copper films with/without the additional copper source. The copper vapor density is found to be critical for high-quality graphene growth. In addition, the copper-vapor-assisted growth is also evidenced by the carbon deposition on the SiO2 substrate of the patterned-copper-dot sample and chamber wall during graphene growth. This growth mechanism explains the correlation between the growth condition and Raman spectrum for films on copper dots. The study on the copper-catalyzed selective graphene growth on the hard substrate paves the way for the synthesis and integration of the 2D material in VLSI.
Quasi-classical modeling of molecular quantum-dot cellular automata multidriver gates
NASA Astrophysics Data System (ADS)
Rahimi, Ehsan; Nejad, Shahram Mohammad
2012-05-01
Molecular quantum-dot cellular automata (mQCA) has received considerable attention in nanoscience. Unlike the current-based molecular switches, where the digital data is represented by the on/off states of the switches, in mQCA devices, binary information is encoded in charge configuration within molecular redox centers. The mQCA paradigm allows high device density and ultra-low power consumption. Digital mQCA gates are the building blocks of circuits in this paradigm. Design and analysis of these gates require quantum chemical calculations, which are demanding in computer time and memory. Therefore, developing simple models to probe mQCA gates is of paramount importance. We derive a semi-classical model to study the steady-state output polarization of mQCA multidriver gates, directly from the two-state approximation in electron transfer theory. The accuracy and validity of this model are analyzed using full quantum chemistry calculations. A complete set of logic gates, including inverters and minority voters, are implemented to provide an appropriate test bench in the two-dot mQCA regime. We also briefly discuss how the QCADesigner tool could find its application in simulation of mQCA devices.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Barrios, M. A.; Liedahl, D. A.; Schneider, M. B.
The first measurement of the electron temperature (T{sub e}) inside a National Ignition Facility hohlraum is obtained using temporally resolved K-shell X-ray spectroscopy of a mid-Z tracer dot. Both isoelectronic- and interstage-line ratios are used to calculate the local T{sub e} via the collisional–radiative atomic physics code SCRAM [Hansen et al., High Energy Density Phys 3, 109 (2007)]. The trajectory of the mid-Z dot as it is ablated from the capsule surface and moves toward the laser entrance hole (LEH) is measured using side-on x-ray imaging, characterizing the plasma flow of the ablating capsule. Data show that the measured dotmore » location is farther away from the LEH in comparison to the radiation-hydrodynamics simulation prediction using HYDRA [Marinak et al., Phys. Plasmas 3, 2070 (1996)]. To account for this discrepancy, the predicted simulation T{sub e} is evaluated at the measured dot trajectory. The peak T{sub e}, measured to be 4.2 keV ± 0.2 keV, is ∼0.5 keV hotter than the simulation prediction.« less
Lower Hybrid Wave Induced SOL Emissivity Variation at High Density on the Alcator C-Mod Tokamak
DOE Office of Scientific and Technical Information (OSTI.GOV)
Faust, I.; Terry, J. L.; Reinke, M. L.
Lower Hybrid Current Drive (LHCD) in the Alcator C-Mod tokamak provides current profile control for the generation of Advanced Tokamak (AT) plasmas. Non-thermal electron bremsstrahlung emission decreases dramatically at n-bar{sub e}>1{center_dot}10{sup 20}[m{sup -3}] for diverted discharges, indicating low current drive efficiency. It is suggested that Scrape-Off-Layer (SOL) collisional absorption of LH waves is the cause for the absence of non-thermal electrons at high density. VUV and visible spectroscopy in the SOL provide direct information on collision excitation processes. Deuterium Balmer-, Lyman- and He-I transition emission measurements were used for initial characterization of SOL electron-neutral collisional absorption. Data from Helium andmore » Deuterium LHCD discharges were characterized by an overall increase in the emissivity as well as an outward radial shift in the emissivity profile with increasing plasma density and applied LHCD power. High-temperature, high-field (T{sub e} = 5keV,B{sub t} = 8T) helium discharges at high density display increased non-thermal signatures as well as reduced SOL emissivity. Variations in emissivity due to LHCD were seen in SOL regions not magnetically connected to the LH Launcher, indicating global SOL effects due to LHCD.« less
Protoplanetary Disks as (Possibly) Viscous Disks
NASA Astrophysics Data System (ADS)
Rafikov, Roman R.
2017-03-01
Protoplanetary disks are believed to evolve on megayear timescales in a diffusive (viscous) manner as a result of angular momentum transport driven by internal stresses. Here we use a sample of 26 protoplanetary disks resolved by ALMA with measured (dust-based) masses and stellar accretion rates to derive the dimensionless α-viscosity values for individual objects, with the goal of constraining the angular momentum transport mechanism. We find that the inferred values of α do not cluster around a single value, but instead have a broad distribution extending from 10-4 to 0.04. Moreover, they correlate with neither the global disk parameters (mass, size, surface density) nor the stellar characteristics (mass, luminosity, radius). However, we do find a strong linear correlation between α and the central mass accretion rate \\dot{M}. This correlation is unlikely to result from the direct physical effect of \\dot{M} on internal stress on global scales. Instead, we suggest that it is caused by the decoupling of stellar \\dot{M} from the global disk characteristics in one of the following ways: (1) The behavior (and range) of α is controlled by a yet-unidentified parameter (e.g., ionization fraction, magnetic field strength, or geometry), ultimately driving the variation of \\dot{M}. (2) The central \\dot{M} is decoupled from the global accretion rate as a result of an instability, or mass accumulation (or loss in a wind or planetary accretion) in the inner disk. (3) Perhaps the most intriguing possibility is that angular momentum in protoplanetary disks is transported nonviscously, e.g., via magnetohydrodynamic winds or spiral density waves.
Optical manipulation of electron spin in quantum dot systems
NASA Astrophysics Data System (ADS)
Villas-Boas, Jose; Ulloa, Sergio; Govorov, Alexander
2006-03-01
Self-assembled quantum dots (QDs) are of particular interest for fundamental physics because of their similarity with atoms. Coupling two of such dots and addressing them with polarized laser light pulses is perhaps even more interesting. In this paper we use a multi-exciton density matrix formalism to model the spin dynamics of a system with single or double layers of QDs. Our model includes the anisotropic electron-hole exchange in the dots, the presence of wetting layer states, and interdot tunneling [1]. Our results show that it is possible to switch the spin polarization of a single self-assembled quantum dot under elliptically polarized light by increasing the laser intensity. In the nonlinear mechanism described here, intense elliptically polarized light creates an effective exchange channel between the exciton spin states through biexciton states, as we demonstrate by numerical and analytical methods. We further show that the effect persists in realistic ensembles of dots, and we propose alternative ways to detect it. We also extend our study to a double layer of quantum dots, where we find a competition between Rabi frequency and tunneling oscillations. [1] J. M. Villas-Boas, S. E. Ulloa, and A. O. Govorov, Phys. Rev. Lett. 94, 057404 (2005); Phys. Rev. B 69, 125342 (2004).
Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting
DOE Office of Scientific and Technical Information (OSTI.GOV)
Yerino, Christopher D.; Jung, Daehwan; Lee, Minjoo Larry, E-mail: minjoo.lee@yale.edu
2014-12-22
Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSSmore » with a median value of 7.6 μeV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters.« less
Fernandez-Delgado, N.; Herrera, M.; Chisholm, M. F.; ...
2016-04-22
The effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs) is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and electron energy loss spectroscopy (EELS). Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region ofmore » the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed.« less
Conditions for entangled photon emission from (111)B site-controlled pyramidal quantum dots
DOE Office of Scientific and Technical Information (OSTI.GOV)
Juska, G., E-mail: gediminas.juska@tyndall.ie; Murray, E.; Dimastrodonato, V.
A study of highly symmetric site-controlled pyramidal In{sub 0.25}Ga{sub 0.75}As quantum dots (QDs) is presented. It is discussed that polarization-entangled photons can be also obtained from pyramidal QDs of different designs from the one already reported in Juska et al. [Nat. Photonics 7, 527 (2013)]. Moreover, some of the limitations for a higher density of entangled photon emitters are addressed. Among these issues are (1) a remaining small fine-structure splitting and (2) an effective QD charging under non-resonant excitation conditions, which strongly reduce the number of useful biexciton-exciton recombination events. A possible solution of the charging problem is investigated exploitingmore » a dual-wavelength excitation technique, which allows a gradual QD charge tuning from strongly negative to positive and, eventually, efficient detection of entangled photons from QDs, which would be otherwise ineffective under a single-wavelength (non-resonant) excitation.« less
Detecting trap states in planar PbS colloidal quantum dot solar cells
Jin, Zhiwen; Wang, Aiji; Zhou, Qing; Wang, Yinshu; Wang, Jizheng
2016-01-01
The recently developed planar architecture (ITO/ZnO/PbS-TBAI/PbS-EDT/Au) has greatly improved the power conversion efficiency of colloidal quantum dot photovoltaics (QDPVs). However, the performance is still far below the theoretical expectations and trap states in the PbS-TBAI film are believed to be the major origin, characterization and understanding of the traps are highly demanded to develop strategies for continued performance improvement. Here employing impedance spectroscopy we detect trap states in the planar PbS QDPVs. We determined a trap state of about 0.34 eV below the conduction band with a density of around 3.2 × 1016 cm−3 eV−1. Temperature dependent open-circuit voltage analysis, temperature dependent diode property analysis and temperature dependent build-in potential analysis consistently denotes an below-bandgap activation energy of about 1.17–1.20 eV. PMID:27845392
Nanoimprint-Transfer-Patterned Solids Enhance Light Absorption in Colloidal Quantum Dot Solar Cells.
Kim, Younghoon; Bicanic, Kristopher; Tan, Hairen; Ouellette, Olivier; Sutherland, Brandon R; García de Arquer, F Pelayo; Jo, Jea Woong; Liu, Mengxia; Sun, Bin; Liu, Min; Hoogland, Sjoerd; Sargent, Edward H
2017-04-12
Colloidal quantum dot (CQD) materials are of interest in thin-film solar cells due to their size-tunable bandgap and low-cost solution-processing. However, CQD solar cells suffer from inefficient charge extraction over the film thicknesses required for complete absorption of solar light. Here we show a new strategy to enhance light absorption in CQD solar cells by nanostructuring the CQD film itself at the back interface. We use two-dimensional finite-difference time-domain (FDTD) simulations to study quantitatively the light absorption enhancement in nanostructured back interfaces in CQD solar cells. We implement this experimentally by demonstrating a nanoimprint-transfer-patterning (NTP) process for the fabrication of nanostructured CQD solids with highly ordered patterns. We show that this approach enables a boost in the power conversion efficiency in CQD solar cells primarily due to an increase in short-circuit current density as a result of enhanced absorption through light-trapping.
Computational Modeling of Photocatalysts for CO2 Conversion Applications
NASA Astrophysics Data System (ADS)
Tafen, De; Matranga, Christopher
2013-03-01
To make photocatalytic conversion approaches efficient, economically practical, and industrially scalable, catalysts capable of utilizing visible and near infrared photons need to be developed. Recently, a series of CdSe and PbS quantum dot-sensitized TiO2 heterostructures have been synthesized, characterized, and tested for reduction of CO2 under visible light. Following these experiments, we use density functional theory to model these heterostructured catalysts and investigate their CO2 catalytic activity. In particular, we study the nature of the heterostructure interface, charge transport/electron transfer, active sites and the electronic structures of these materials. The results will be presented and compared to experiments. The improvement of our understanding of the properties of these materials will aid not only the development of more robust, visible light active photocatalysts for carbon management applications, but also the development of quantum dot-sensitized semiconductor solar cells with high efficiencies in solar-to-electrical energy conversion.
2017-01-01
We perform a quantitative analysis of the trap density of states (trap DOS) in PbS quantum dot field-effect transistors (QD-FETs), which utilize several polymer gate insulators with a wide range of dielectric constants. With increasing gate dielectric constant, we observe increasing trap DOS close to the lowest unoccupied molecular orbital (LUMO) of the QDs. In addition, this increase is also consistently followed by broadening of the trap DOS. We rationalize that the increase and broadening of the spectral trap distribution originate from dipolar disorder as well as polaronic interactions, which are appearing at strong dielectric polarization. Interestingly, the increased polaron-induced traps do not show any negative effect on the charge carrier mobility in our QD devices at the highest applied gate voltage, giving the possibility to fabricate efficient low-voltage QD devices without suppressing carrier transport. PMID:28084725
Su, Fenghua; Lv, Xiaoming; Miao, Menghe
2015-02-18
Yarn supercapacitors are promising power sources for flexible electronic applications that require conventional fabric-like durability and wearer comfort. Carbon nanotube (CNT) yarn is an attractive choice for constructing yarn supercapacitors used in wearable textiles because of its high strength and flexibility. However, low capacitance and energy density limits the use of pure CNT yarn in wearable high-energy density devices. Here, transitional metal oxide pseudocapacitive materials NiO and Co3 O4 are deposited on as-spun CNT yarn surface using a simple electrodeposition process. The Co3 O4 deposited on the CNT yarn surface forms a uniform hybridized CNT@Co3 O4 layer. The two-ply supercapacitors formed from the CNT@Co3 O4 composite yarns display excellent electrochemical properties with very high capacitance of 52.6 mF cm(-2) and energy density of 1.10 μWh cm(-2) . The high performance two-ply CNT@Co3 O4 yarn supercapacitors are mechanically and electrochemically robust to meet the high performance requirements of power sources for wearable electronics. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
SEMICONDUCTOR PHYSICS: Properties of the two- and three-dimensional quantum dot qubit
NASA Astrophysics Data System (ADS)
Shihua, Chen
2010-05-01
On the condition of electric-longitudinal-optical (LO) phonon strong coupling in both two- and three-dimensional parabolic quantum dots (QDs), we obtain the eigenenergies of the ground state (GS) and the first excited state (ES), the eigenfunctions of the GS and the first ES by using a variational method of Pekar type. This system in QD may be employed as a quantum system-quantum bit (qubit). When the electron is in the superposition state of the GS and the first ES, we obtain the time evolution of the electron density. The relations of both the electron probability density and the period of oscillation with the electric-LO phonon coupling strength and confinement length are discussed.
Dual-emissive quantum dots for multispectral intraoperative fluorescence imaging.
Chin, Patrick T K; Buckle, Tessa; Aguirre de Miguel, Arantxa; Meskers, Stefan C J; Janssen, René A J; van Leeuwen, Fijs W B
2010-09-01
Fluorescence molecular imaging is rapidly increasing its popularity in image guided surgery applications. To help develop its full surgical potential it remains a challenge to generate dual-emissive imaging agents that allow for combined visible assessment and sensitive camera based imaging. To this end, we now describe multispectral InP/ZnS quantum dots (QDs) that exhibit a bright visible green/yellow exciton emission combined with a long-lived far red defect emission. The intensity of the latter emission was enhanced by X-ray irradiation and allows for: 1) inverted QD density dependent defect emission intensity, showing improved efficacies at lower QD densities, and 2) detection without direct illumination and interference from autofluorescence. Copyright 2010 Elsevier Ltd. All rights reserved.
Non-Markovian full counting statistics in quantum dot molecules
Xue, Hai-Bin; Jiao, Hu-Jun; Liang, Jiu-Qing; Liu, Wu-Ming
2015-01-01
Full counting statistics of electron transport is a powerful diagnostic tool for probing the nature of quantum transport beyond what is obtainable from the average current or conductance measurement alone. In particular, the non-Markovian dynamics of quantum dot molecule plays an important role in the nonequilibrium electron tunneling processes. It is thus necessary to understand the non-Markovian full counting statistics in a quantum dot molecule. Here we study the non-Markovian full counting statistics in two typical quantum dot molecules, namely, serially coupled and side-coupled double quantum dots with high quantum coherence in a certain parameter regime. We demonstrate that the non-Markovian effect manifests itself through the quantum coherence of the quantum dot molecule system, and has a significant impact on the full counting statistics in the high quantum-coherent quantum dot molecule system, which depends on the coupling of the quantum dot molecule system with the source and drain electrodes. The results indicated that the influence of the non-Markovian effect on the full counting statistics of electron transport, which should be considered in a high quantum-coherent quantum dot molecule system, can provide a better understanding of electron transport through quantum dot molecules. PMID:25752245
Tanabe, Katsuaki; Guimard, Denis; Bordel, Damien; Iwamoto, Satoshi; Arakawa, Yasuhiko
2010-05-10
An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni alloy layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 microm at room temperature with a threshold current density of 600 A/cm(2). (c) 2010 Optical Society of America.
Perceptual asymmetry reveals neural substrates underlying stereoscopic transparency.
Tsirlin, Inna; Allison, Robert S; Wilcox, Laurie M
2012-02-01
We describe a perceptual asymmetry found in stereoscopic perception of overlaid random-dot surfaces. Specifically, the minimum separation in depth needed to perceptually segregate two overlaid surfaces depended on the distribution of dots across the surfaces. With the total dot density fixed, significantly larger inter-plane disparities were required for perceptual segregation of the surfaces when the front surface had fewer dots than the back surface compared to when the back surface was the one with fewer dots. We propose that our results reflect an asymmetry in the signal strength of the front and back surfaces due to the assignment of the spaces between the dots to the back surface by disparity interpolation. This hypothesis was supported by the results of two experiments designed to reduce the imbalance in the neuronal response to the two surfaces. We modeled the psychophysical data with a network of inter-neural connections: excitatory within-disparity and inhibitory across disparity, where the spread of disparity was modulated according to figure-ground assignment. These psychophysical and computational findings suggest that stereoscopic transparency depends on both inter-neural interactions of disparity-tuned cells and higher-level processes governing figure ground segregation. Copyright © 2011 Elsevier Ltd. All rights reserved.
Tsallis entropy and decoherence of CsI quantum pseudo dot qubit
NASA Astrophysics Data System (ADS)
Tiotsop, M.; Fotue, A. J.; Fotsin, H. B.; Fai, L. C.
2017-05-01
Polaron in CsI quantum pseudo dot under an electromagnetic field was considered, and the ground and first excited state energies were derived by employing the combining Pekar variational and unitary transformation methods. With the two-level system obtained, single qubit was envisioned and the decoherence was studied using non-extensive entropy (Tsallis entropy). Numerical results showed: (i) the increase (decrease) of the energy levels (period of oscillation) with the increase of chemical potential, the zero point of pseudo dot, cyclotron frequency, and transverse and longitudinal confinements; (ii) the Tsallis entropy evolved as a wave envelop that increase with the increase of non-extenxive parameter and with the increase of electric field strength, zero point of pseudo dot and cyclotron frequency the wave envelop evolve periodically with reduction of period; (iii) The transition probability increases from the boundary to the centre of the dot where it has its maximum value. It was also noted that the probability density oscillate with period T0 = ℏ / Δ Ε with the tunnelling of the chemical potential and zero point of the pseudo dot. These results are helpful in the control of decoherence in quantum systems and may also be useful for the design of quantum computers.
Lv, Haipeng; Gao, Xiujiao; Xu, Qunjie; Liu, Haimei; Wang, Yong-Gang; Xia, Yongyao
2017-11-22
Manganese oxides (MnO 2 ) are regarded as typical and promising electrode materials for supercapacitors. However, the practical electrochemical performance of MnO 2 is far from its theoretical value. Nowadays, numerous efforts are being devoted to the design and preparation of nanostructured MnO 2 with the aim of improving its electrochemical properties. In this work, ultralong MnO 2 nanowires were fabricated in a process induced by carbon quantum dots (CQDs); subsequently, a binder-free flexible electrode membrane was easily obtained by vacuum filtration of the MnO 2 nanowires. The effects of the CQDs not only induced the formation of one-dimensional nanostructured MnO 2 , but also significantly improved the wettability between electrode and electrolyte. In other words, the MnO 2 membrane demonstrated a superhydrophilic character in aqueous solution, indicating the sufficient and abundant contact probability between electrode and electrolyte. The binder-free flexible MnO 2 electrode exhibited a preeminent specific capacitance of 340 F g -1 at 1 A g -1 ; even when the current density reached 20 A g -1 , it still maintained 260 F g -1 (76% retention rate compared to that at 1 A g -1 ). Moreover, it also showed good cycling stability with 80.1% capacity retention over 10 000 cycles at 1 A g -1 . Furthermore, an asymmetric supercapacitor was constructed using the MnO 2 membrane and active carbon as the positive and negative electrodes, respectively, which exhibited a high energy density of 33.6 Wh kg -1 at 1.0 kW kg -1 , and a high power density of 10 kW kg -1 at 12.5 Wh kg -1 .
Psychophysical estimation of the effects of aging on direction-of-heading judgments
NASA Astrophysics Data System (ADS)
Raghuram, Aparna; Lakshminarayanan, Vasudevan
2011-11-01
We conducted psychophysical experiments on direction-of-heading judgments using old and young subjects. Subjects estimated heading directions on a translation perpendicular to the vertical plane (frontoparallel); we found that heading judgments were affected by age. Increasing the random dot density in the stimulus from 24 to 400 dots did not improve threshold significantly. Older subjects started performing worse at the highest dots condition of 400. The speed of the radial motion was important, as heading judgments with slower radial motion were difficult to judge than faster radial motion, as the focus of expansion was easier to locate owing to the larger displacement of dots. Gender differences indicated that older women had a higher threshold than older men. This was only significant for the faster simulated radial speed. A general trend of women having a higher threshold than men was noticed.
NASA Astrophysics Data System (ADS)
Spence, R. A. W.; Tadhunter, C. N.; Rose, M.; Rodríguez Zaurín, J.
2018-05-01
As part of the QUADROS project to quantify the impact of AGN-driven outflows in rapidly evolving galaxies in the local universe, we present observations of 8 nearby ULIRGs (0.04 < z < 0.2) taken with the ISIS spectrograph on the William Herschel Telescope (WHT), and also summarize the results of the project as a whole. Consistent with Rose et al. (2018), we find that the outflow regions are compact (0.08 < R_{[O III]} < 1.5 kpc), and the electron densities measured using the [S II], [O II] trans-auroral emission-line ratios are relatively high (2.5 < log ne (cm-3) < 4.5, median log ne (cm-3) ˜ 3.1). Many of the outflow regions are also significantly reddened (median E(B - V) ˜ 0.5). Assuming that the de-projected outflow velocities are represented by the 5^{th} percentile velocities (v05) of the broad, blueshifted components of [O III] λ5007, we calculate relatively modest mass outflow rates (0.1 < \\dot{M} < 20 M⊙ yr-1, median \\dot{M} ˜ 2 M⊙ yr-1), and find kinetic powers as a fraction of the AGN bolometric luminosity (\\dot{F} = \\dot{E}/L_bol) in the range 0.02 < \\dot{F} < 3 per cent, median \\dot{F} ˜ 0.3 per cent). The latter estimates are in line with the predictions of multi-stage outflow models, or single-stage models in which only a modest fraction of the initial kinetic power of the inner disk winds is transferred to the larger-scale outflows. Considering the QUADROS sample as a whole, we find no clear evidence for correlations between the properties of the outflows and the bolometric luminosities of the AGN, albeit based on a sample that covers a relatively small range in Lbol. Overall, our results suggest that there is a significant intrinsic scatter in outflow properties of ULIRGs for a given AGN luminosity.
Enhancing light absorption within the carrier transport length in quantum junction solar cells.
Fu, Yulan; Hara, Yukihiro; Miller, Christopher W; Lopez, Rene
2015-09-10
Colloidal quantum dot (CQD) solar cells have attracted tremendous attention because of their tunable absorption spectrum window and potentially low processing cost. Recently reported quantum junction solar cells represent a promising approach to building a rectifying photovoltaic device that employs CQD layers on each side of the p-n junction. However, the ultimate efficiency of CQD solar cells is still highly limited by their high trap state density in both p- and n-type CQDs. By modeling photonic structures to enhance the light absorption within the carrier transport length and by ensuring that the carrier generation and collection efficiencies were both augmented, our work shows that overall device current density could be improved. We utilized a two-dimensional numerical model to calculate the characteristics of patterned CQD solar cells based on a simple grating structure. Our calculation predicts a short circuit current density as high as 31 mA/cm2, a value nearly 1.5 times larger than that of the conventional flat design, showing the great potential value of patterned quantum junction solar cells.
NASA Astrophysics Data System (ADS)
Santos, J. J.; Bailly-Grandvaux, M.; Ehret, M.; Arefiev, A. V.; Batani, D.; Beg, F. N.; Calisti, A.; Ferri, S.; Florido, R.; Forestier-Colleoni, P.; Fujioka, S.; Gigosos, M. A.; Giuffrida, L.; Gremillet, L.; Honrubia, J. J.; Kojima, S.; Korneev, Ph.; Law, K. F. F.; Marquès, J.-R.; Morace, A.; Mossé, C.; Peyrusse, O.; Rose, S.; Roth, M.; Sakata, S.; Schaumann, G.; Suzuki-Vidal, F.; Tikhonchuk, V. T.; Toncian, T.; Woolsey, N.; Zhang, Z.
2018-05-01
Powerful nanosecond laser-plasma processes are explored to generate discharge currents of a few 100 kA in coil targets, yielding magnetostatic fields (B-fields) in excess of 0.5 kT. The quasi-static currents are provided from hot electron ejection from the laser-irradiated surface. According to our model, which describes the evolution of the discharge current, the major control parameter is the laser irradiance Ilasλlas2 . The space-time evolution of the B-fields is experimentally characterized by high-frequency bandwidth B-dot probes and proton-deflectometry measurements. The magnetic pulses, of ns-scale, are long enough to magnetize secondary targets through resistive diffusion. We applied it in experiments of laser-generated relativistic electron transport through solid dielectric targets, yielding an unprecedented 5-fold enhancement of the energy-density flux at 60 μm depth, compared to unmagnetized transport conditions. These studies pave the ground for magnetized high-energy density physics investigations, related to laser-generated secondary sources of radiation and/or high-energy particles and their transport, to high-gain fusion energy schemes, and to laboratory astrophysics.
Pattern transfer from nanoparticle arrays
NASA Astrophysics Data System (ADS)
Hogg, Charles R., III
This project contributes to the long-term extensibility of bit-patterned media (BPM), by removing obstacles to using a new and smaller class of self-assembling materials: surfactant-coated nanoparticles. Self-assembly rapidly produces regular patterns of small features over large areas. If these patterns can be used as templates for magnetic bits, the resulting media would have both high capacity and high bit density. The data storage industry has identified block copolymers (BCP) as the self-assembling technology for the first generation of BPM. Arrays of surfactant-coated nanoparticles have long shown higher feature densities than BCP, but their patterns could not previously be transferred into underlying substrates. I identify one key obstacle that has prevented this pattern transfer: the particles undergo a disordering transition during etching which I have called "cracking". I compare several approaches to measuring the degree of cracking, and I develop two novel techniques for preventing it and allowing pattern transfer. I demonstrate two different kinds of pattern transfer: positive (dots) and negative (antidots). To make dots, I etch the substrate between the particles with a directional CF4-based reactive ion etch (RIE). I find the ultrasmall gaps (just 2 nm) cause a tremendous slowdown in the etch rate, by a factor of 10 or more---an observation of fundamental significance for any pattern transfer at ultrahigh bit densities. Antidots are made by depositing material in the interstices, then removing the particles to leave behind a contiguous inorganic lattice. This lattice can itself be used as an etch mask for CF4-based RIE, in order to increase the height contrast. The antidot process promises great generality in choice of materials, both for the antidot lattice and the particles themselves; here, I present lattices of Al and Cr, ternplated from arrays of 13.7 nm-diameter Fe3O4 or 30 nm-diameter MnO nanoparticles. The fidelity of transfer is also noticeably better for antidots than for dots, making antidots the more promising technique for industrial applications. The smallest period for which I have shown pattern transfer (15.7 nm) is comparable to (but slightly smaller than) the smallest period currently shown for pattern transfer from block copolymers (17 nm); hence, my results compare favorably with the state of the art. Ultimately, by demonstrating that surfactant-coated nanoparticles can be used as pattern masks, this work increases their viability as an option to continue the exponential growth of bit density in magnetic storage media.
29 CFR 1910.111 - Storage and handling of anhydrous ammonia.
Code of Federal Regulations, 2013 CFR
2013-07-01
... 1,200 gallons water capacity. (viii) Filling density. the percent ratio of the weight of the gas in... ammonia. (xi) Capacity. Total volume of the container in standard U.S. gallons. (xii) DOT specifications... allowable water level to which the container may be filled for test purposes. (vii) With the density of the...
29 CFR 1910.111 - Storage and handling of anhydrous ammonia.
Code of Federal Regulations, 2014 CFR
2014-07-01
... 1,200 gallons water capacity. (viii) Filling density. the percent ratio of the weight of the gas in... ammonia. (xi) Capacity. Total volume of the container in standard U.S. gallons. (xii) DOT specifications... allowable water level to which the container may be filled for test purposes. (vii) With the density of the...
29 CFR 1910.111 - Storage and handling of anhydrous ammonia.
Code of Federal Regulations, 2012 CFR
2012-07-01
... 1,200 gallons water capacity. (viii) Filling density. the percent ratio of the weight of the gas in... ammonia. (xi) Capacity. Total volume of the container in standard U.S. gallons. (xii) DOT specifications... allowable water level to which the container may be filled for test purposes. (vii) With the density of the...
NASA Astrophysics Data System (ADS)
Rodríguez Sartori, Damián; Lillo, Cristian R.; Romero, Juan J.; Dell‧Arciprete, María Laura; Miñán, Alejandro; de Mele, Mónica Fernández Lorenzo; Gonzalez, Mónica C.
2016-11-01
Grafting of polyethylene glycol (PEG) to ultrasmall photoluminescent silicon dots (SiDs) is expected to improve and expand the applications of these particles to aqueous environments and biological systems. Herein we report a novel one-pot synthesis of robust, highly water compatible PEG-coated SiDs (denoted as PEG-SiDs) of (3.3 ± 0.5) nm size. The nanoparticles’ synthesis is based on the liquid phase oxidation of magnesium silicide using PEG as reaction media and leading to high PEG density grafting. PEG-SiDs enhanced photophysical, photosensitising, and solution properties in aqueous environments are described and compared to those of 2 nm size PEG-coated SiDs with low PEG density grafting (denoted as PEG-NHSiDs) obtained from a multistep synthesis strategy. PEG-SiDs form highly dispersed suspensions in water showing stable photoluminescence and quantum yields of Φ = 0.13 ± 0.04 at 370 nm excitation in air-saturated suspensions. These particles exhibited the capacity of photosensitising the formation of singlet molecular oxygen, not observed for PEG-NHSiDs. PEG robust shielding of the silicon core luminescent properties is further demonstrated in bio-imaging experiments stressing the strong interaction between PEG-SiDs and Staphylococcus aureus smears by observing the photoluminescence of particles. PEG-SiDs were found to be nontoxic to S. aureus cells at concentrations of 100 mg ml-1, though a bacteriostatic effect on S. aureus biofilms was observed upon UV-A irradiation under conditions where light alone has no effect.
Children's multiplicative transformations of discrete and continuous quantities.
Barth, Hilary; Baron, Andrew; Spelke, Elizabeth; Carey, Susan
2009-08-01
Recent studies have documented an evolutionarily primitive, early emerging cognitive system for the mental representation of numerical quantity (the analog magnitude system). Studies with nonhuman primates, human infants, and preschoolers have shown this system to support computations of numerical ordering, addition, and subtraction involving whole number concepts prior to arithmetic training. Here we report evidence that this system supports children's predictions about the outcomes of halving and perhaps also doubling transformations. A total of 138 kindergartners and first graders were asked to reason about the quantity resulting from the doubling or halving of an initial numerosity (of a set of dots) or an initial length (of a bar). Controls for dot size, total dot area, and dot density ensured that children were responding to the number of dots in the arrays. Prior to formal instruction in symbolic multiplication, division, or rational number, halving (and perhaps doubling) computations appear to be deployed over discrete and possibly continuous quantities. The ability to apply simple multiplicative transformations to analog magnitude representations of quantity may form a part of the toolkit that children use to construct later concepts of rational number.
Tailoring Quantum Dot Assemblies to Extend Exciton Coherence Times and Improve Exciton Transport
NASA Astrophysics Data System (ADS)
Seward, Kenton; Lin, Zhibin; Lusk, Mark
2012-02-01
The motion of excitons through nanostructured assemblies plays a central role in a wide range of physical phenomena including quantum computing, molecular electronics, photosynthetic processes, excitonic transistors and light emitting diodes. All of these technologies are severely handicapped, though, by quasi-particle lifetimes on the order of a nanosecond. The movement of excitons must therefore be as efficient as possible in order to move excitons meaningful distances. This is problematic for assemblies of small Si quantum dots (QDs), where excitons quickly localize and entangle with dot phonon modes. Ensuing exciton transport is then characterized by a classical random walk reduced to very short distances because of efficient recombination. We use a combination of master equation (Haken-Strobl) formalism and density functional theory to estimate the rate of decoherence in Si QD assemblies and its impact on exciton mobility. Exciton-phonon coupling and Coulomb interactions are calculated as a function of dot size, spacing and termination to minimize the rate of intra-dot phonon entanglement. This extends the time over which more efficient exciton transport, characterized by partial coherence, can be maintained.
NASA Astrophysics Data System (ADS)
Qi, Jiabin; Xiong, Hao; Wang, Gang; Xie, Huaqing; Jia, Wei; Zhang, Qinghong; Li, Yaogang; Wang, Hongzhi
2018-02-01
Crystallization and interface engineering of perovskite are the most important factors in achieving high-performance perovskite solar cells (PSCs). Herein, we construct an ultrathin CdSe quantum dots (QDs) underlayer via a solution-processable method, which acts as a seed-mediated layer for perfect perovskite film, with both uniform morphology and better absorption capacity. In addition, CdSe QDs and perovskites form a fully crystalline heterojunction, which is beneficial to minimizing the defect and trap densities. Then, an Ostwald ripening process is adopted to fabricate large-grain, pinhole-free perovskite thin film, by a simple methylammonium bromide treatment. Besides, the first principle is applied in calculating organic/inorganic hybrid perovskite, confirming that electrons can move even quicker and more effectively, as a result of our work. Due to these treatments, representing a very simple method to simultaneously control perovskite crystallization and optimize the interfaces in PSCs, a maximum power conversion efficiency of 15.68% is achieved, 35% higher than the PSC both without CdSe and MABr treatment (11.57%), indicating better performance.
Annealing effect on microstructural recovery in 316L and A533B
NASA Astrophysics Data System (ADS)
Hashimoto, N.; Goto, S.; Inoue, S.; Suzuki, E.
2017-11-01
An austenitic model alloy (316L) and a low alloy steel (A533B) were exposed to constant or fluctuating temperature after electron irradiation to a cumulative damage level of 1 displacement per atom. 316L model alloy was exposed to LWR operating temperature during electron irradiation, and were exposed to a higher temperature at a high heating and cooling rates. The annealing experiment after irradiation to 316L resulted in the change in irradiation-induced microstructure; both the size and the number density of Frank loop and black dots were decreased, while the volume fraction of void was increased. In the case of A533B, the aging experiment after electron irradiation resulted in the shrinkage or the disappearance of black dots and the growth of dislocation loops. It is suggested that during annealing and/or aging at a high temperature the excess vacancies could be provided and flew into each defect feature, resulting in that interstitial type feature could be diminished, while vacancy type increased in volume fraction if exists.
Functional surface engineering of C-dots for fluorescent biosensing and in vivo bioimaging.
Ding, Changqin; Zhu, Anwei; Tian, Yang
2014-01-21
Nanoparticles are promising scaffolds for applications such as imaging, chemical sensors and biosensors, diagnostics, drug delivery, catalysis, energy, photonics, medicine, and more. Surface functionalization of nanoparticles introduces an additional dimension in controlling nanoparticle interfacial properties and provides an effective bridge to connect nanoparticles to biological systems. With fascinating photoluminescence properties, carbon dots (C-dots), carbon-containing nanoparticles that are attracting considerable attention as a new type of quantum dot, are becoming both an important class of imaging probes and a versatile platform for engineering multifunctional nanosensors. In order to transfer C-dots from proof-of-concept studies toward real world applications such as in vivo bioimaging and biosensing, careful design and engineering of C-dot probes is becoming increasingly important. A comprehensive knowledge of how C-dot surfaces with various properties behave is essential for engineering C-dots with useful imaging properties such as high quantum yield, stability, and low toxicity, and with desirable biosensing properties such as high selectivity, sensitivity, and accuracy. Several reviews in recent years have reported preparation methods and properties of C-dots and described their application in biosensors, catalysis, photovoltatic cells, and more. However, no one has yet systematically summarized the surface engineering of C-dots, nor the use of C-dots as fluorescent nanosensors or probes for in vivo imaging in cells, tissues, and living organisms. In this Account, we discuss the major design principles and criteria for engineering the surface functionality of C-dots for biological applications. These criteria include brightness, long-term stability, and good biocompatibility. We review recent developments in designing C-dot surfaces with various functionalities for use as nanosensors or as fluorescent probes with fascinating analytical performance, and we emphasize applications in bioimaging and biosensing in live cells, tissues, and animals. In addition, we highlight our work on the design and synthesis of a C-dot ratiometric biosensor for intracellular Cu(2+) detection, and a twophoton fluorescent probe for pH measurement in live cells and tissues. We conclude this Account by outlining future directions in engineering the functional surface of C-dots for a variety of in vivo imaging applications, including dots with combined targeting, imaging and therapeutic-delivery capabilities, or high-resolution multiplexed vascular imaging. With each application C-dots should open new horizons of multiplexed quantitative detection, high-resolution fluorescence imaging, and long-term, real-time monitoring of their target.
Lopez-Delgado, R; Zhou, Y; Zazueta-Raynaud, A; Zhao, H; Pelayo, J E; Vomiero, A; Álvarez-Ramos, M E; Rosei, F; Ayon, A
2017-10-26
Silicon solar cells have captured a large portion of the total market of photovoltaic devices mostly due to their relatively high efficiency. However, Silicon exhibits limitations in ultraviolet absorption because high-energy photons are absorbed at the surface of the solar cell, in the heavily doped region, and the photo-generated electron-hole pairs need to diffuse into the junction region, resulting in significant carrier recombination. One of the alternatives to improve the absorption range involves the use of down-shifting nano-structures able to interact with the aforementioned high energy photons. Here, as a proof of concept, we use downshifting CdSe/CdS quantum dots to improve the performance of a silicon solar cell. The incorporation of these nanostructures triggered improvements in the short circuit current density (J sc , from 32.5 to 37.0 mA/cm 2 ). This improvement led to a ∼13% increase in the power conversion efficiency (PCE), from 12.0 to 13.5%. Our results demonstrate that the application of down-shifting materials is a viable strategy to improve the efficiency of Silicon solar cells with mass-compatible techniques that could serve to promote their widespread utilization.
Liu, CY; Sun, ZZ; Yew, KC
2006-01-01
Self-assembled GaInNAs quantum dots (QDs) were grown on GaAs (001) substrate using solid-source molecular-beam epitaxy (SSMBE) equipped with a radio-frequency nitrogen plasma source. The GaInNAs QD growth characteristics were extensively investigated using atomic-force microscopy (AFM), photoluminescence (PL), and transmission electron microscopy (TEM) measurements. Self-assembled GaInNAs/GaAsN single layer QD lasers grown using SSMBE have been fabricated and characterized. The laser worked under continuous wave (CW) operation at room temperature (RT) with emission wavelength of 1175.86 nm. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is ∼1.05 kA/cm2from a GaInNAs QD laser (50 × 1,700 µm2) at 10 °C. High-temperature operation up to 65 °C was demonstrated from an unbonded GaInNAs QD laser (50 × 1,060 µm2), with high characteristic temperature of 79.4 K in the temperature range of 10–60 °C.
Influences of temperature on asymmetric quantum dot qubit in Coulombic impunity potential
NASA Astrophysics Data System (ADS)
Chen, Y.-J.; Song, H.-T.; Xiao, J.-L.
2018-05-01
Using the variational method of the Pekar-type, we study the influences of the temperature on the asymmetric quantum dot (QD) qubit in the Coulombic impunity potential. Then we derive the numerical results and formulate the derivative relationships of the electron probability density and the electron oscillation period in the superposition state of the ground state and the first-excited state with the electron-phonon coupling constant, the Coulombic impurity potential, the transverse and longitudinal confinement strengths at different temperatures, respectively.
1982-02-15
function of the doping density at 300 and 77 K for the classical Boltzmann statistics or depletion approximation (solid line) and for the approximate...Fermi-Dirac statistics (equation (19) dotted line)• This comparison demonstrates that the deviation from Boltzmann statistics is quite noticeable...tunneling Schottky barriers cannot be obtained at these doping levels. The dotted lines are obtained when Boltzmann statistics are used in the Al Ga
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wang, Zihao; Preble, Stefan F.; Yao, Ruizhe
2015-12-28
InAs quantum dot (QD) laser heterostructures have been grown by molecular beam epitaxy system on GaAs substrates, and then transferred to silicon substrates by a low temperature (250 °C) Pd-mediated wafer bonding process. A low interfacial resistivity of only 0.2 Ω cm{sup 2} formed during the bonding process is characterized by the current-voltage measurements. The InAs QD lasers on Si exhibit comparable characteristics to state-of-the-art QD lasers on silicon substrates, where the threshold current density J{sub th} and differential quantum efficiency η{sub d} of 240 A/cm{sup 2} and 23.9%, respectively, at room temperature are obtained with laser bars of cavity length and waveguide ridgemore » of 1.5 mm and 5 μm, respectively. The InAs QD lasers also show operation up to 100 °C with a threshold current density J{sub th} and differential quantum efficiency η{sub d} of 950 A/cm{sup 2} and 9.3%, respectively. The temperature coefficient T{sub 0} of 69 K from 60 to 100 °C is characterized from the temperature dependent J{sub th} measurements.« less
NASA Astrophysics Data System (ADS)
Khan, J.; Lingalugari, M.; Al-Amoody, F.; Jain, F.
2013-11-01
As conventional memories approach scaling limitations, new storage methods must be utilized to increase Si yield and produce higher on-chip memory density. Use of II-VI Zn0.56Cd0.44Se quantum dots (QDs) is compatible with epitaxial gate insulators such as ZnS-ZnMgS. Voltage-dependent charging effects in cladded Zn0.56Cd0.44Se QDs are presented in a conventional metal-oxide-semiconductor capacitor structure. Charge storage capabilities in Si and ZnMgS QDs have been reported by various researchers; this work is focused on II-VI material Zn0.56Cd0.44Se QDs nucleated using photoassisted microwave plasma metalorganic chemical vapor deposition. Using capacitance-voltage hysteresis characterization, the multistep charging and discharging capabilities of the QDs at room temperature are presented. Three charging states are presented within a 10 V charging voltage range. These characteristics exemplify discrete charge states in the QD layer, perfect for multibit, QD-functionalized high-density memory applications. Multiple charge states with low operating voltage provide device characteristics that can be used for multibit storage by allowing varying charges to be stored in a QD layer based on the applied "write" voltage.
NASA Astrophysics Data System (ADS)
Marquardt, Oliver; Hickel, Tilmann; Neugebauer, Jörg; Gambaryan, Karen M.; Aroutiounian, Vladimir M.
2011-08-01
Quaternary III-V InAsSbP quantum dots (QDs) have been grown in the form of cooperative InAsSb/InAsP structures using a modified version of the liquid phase epitaxy. High resolution scanning electron microscopy, atomic force microscopy, and Fourier-transform infrared spectrometry were used to investigate these so-called nano-camomiles, mainly consisting of a central InAsSb QD surrounded by six InAsP-QDs, that shall be referred to as leaves in the following. The observed QDs average density ranges from 0.8 to 2 × 109 cm-2, with heights and widths dimensions from 2 to 20 nm and 5 to 45 nm, respectively. The average density of the leaves is equal to (6-10) × 109 cm-2 with dimensions of approx. 5 to 40 nm in width and depth. To achieve a first basic understanding of the electronic properties, we have modeled these novel nanostructures using second-order continuum elasticity theory and an eight-band k .p model to calculate the electronic structure. Our calculations found a clear localization of hole states in the central InAsSb dot. The localization of electron states, however, was found to be weak and might thus be easily influenced by external electric fields or strain.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Islam, Sk Masiul, E-mail: masiulelt@gmail.com; Chowdhury, Sisir; Sarkar, Krishnendu
2015-06-24
Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. Themore » device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.« less
Field, Kevin G.; Briggs, Samuel A.; Hu, Xunxiang; ...
2016-11-01
FeCrAl alloys are an attractive materials class for nuclear power applications due to their increased environmental compatibility over more traditional nuclear materials. Preliminary studies into the radiation tolerance of FeCrAl alloys under accelerated neutron testing between 300-400 °C have shown post-irradiation microstructures containing dislocation loops and Cr-rich ' phase. Although these initial works established the post-irradiation microstructures, little to no focus was applied towards the influence of pre-irradiation microstructures on this response. Here, a well annealed commercial FeCrAl alloy, Alkrothal 720, was neutron irradiated to 1.8 dpa at 382 °C and then the role of random high angle grain boundariesmore » on the spatial distribution and size of dislocation loops, dislocation loops, and black dot damage was analyzed using on-zone scanning transmission electron microscopy. Results showed a clear heterogeneous dislocation loop formation with dislocation loops showing an increased number density and size, black dot damage showing a significant number density decrease, and an increased size of dislocation loops in the vicinity directly adjacent to the grain boundary. Lastly, these results suggest the importance of the pre-irradiation microstructure on the radiation tolerance of FeCrAl alloys.« less
Rafalovskaia-Orlovskaia, E P; Gorgidze, L A; Gladkikh, A A; Tauger, S M; Vorob'ev, I A
2012-01-01
The usefulness of quantum dots for the immunofluorescent detection of surface antigens on the lymphoid cells has been studied. To optimize quantum dots detection we have upgraded fluorescent microscope that allows obtaining multiple images from different quantum dots from one section. Specimens stained with quantum dots remained stable over two weeks and practically did not bleach under mercury lamp illumination during tens of minutes. Direct conjugates of primary mouse monoclonal antibodies with quantum dots demonstrated high specificity and sufficient sensitivity in the case of double staining on the frozen sections. Because of the high stability of quantum dots' fluorescence, this method allows to analyze antigen coexpression on the lymphoid tissue sections for diagnostic purposes. The spillover of fluorescent signals from quantum dots into adjacent fluorescent channels, with maxima differing by 40 nm, did not exceed 8%, which makes the spectral compensation is practically unnecessary.
Focal-Plane Arrays of Quantum-Dot Infrared Photodetectors
NASA Technical Reports Server (NTRS)
Gunapala, Sarath; Wilson, Daniel; Hill, Cory; Liu, John; Bandara, Sumith; Ting, David
2007-01-01
Focal-plane arrays of semiconductor quantum-dot infrared photodetectors (QDIPs) are being developed as superior alternatives to prior infrared imagers, including imagers based on HgCdTe devices and, especially, those based on quantum-well infrared photodetectors (QWIPs). HgCdTe devices and arrays thereof are difficult to fabricate and operate, and they exhibit large nonunformities and high 1/f (where f signifies frequency) noise. QWIPs are easier to fabricate and operate, can be made nearly uniform, and exhibit lower 1/f noise, but they exhibit larger dark currents, and their quantization only along the growth direction prevents them from absorbing photons at normal incidence, thereby limiting their quantum efficiencies. Like QWIPs, QDIPs offer the advantages of greater ease of operation, greater uniformity, and lower 1/f noise, but without the disadvantages: QDIPs exhibit lower dark currents, and quantum efficiencies of QDIPs are greater because the three-dimensional quantization of QDIPs is favorable to the absorption of photons at normal or oblique incidence. Moreover, QDIPs can be operated at higher temperatures (around 200 K) than are required for operation of QWIPs. The main problem in the development of QDIP imagers is to fabricate quantum dots with the requisite uniformity of size and spacing. A promising approach to be tested soon involves the use of electron-beam lithography to define the locations and sizes of quantum dots. A photoresist-covered GaAs substrate would be exposed to the beam generated by an advanced, high-precision electron beam apparatus. The exposure pattern would consist of spots typically having a diameter of 4 nm and typically spaced 20 nm apart. The exposed photoresist would be developed by either a high-contrast or a low-contrast method. In the high-contrast method, the spots would be etched in such a way as to form steep-wall holes all the way down to the substrate. The holes would be wider than the electron beam spots perhaps as wide as 15 to 20 nm, but may be sufficient to control the growth of the quantum dots. In the low-contrast method, the resist would be etched in such a way as to form dimples, the shapes of which would mimic the electron-beam density profile. Then by use of a transfer etching process that etches the substrate faster than it etches the resist, either the pattern of holes or a pattern comprising the narrow, lowest portions of the dimples would be imparted to the substrate. Having been thus patterned, the substrate would be cleaned. The resulting holes or dimples in the substrate would serve as nucleation sites for the growth of quantum dots of controlled size in the following steps. The substrate would be cleaned, then placed in a molecular-beam-epitaxy (MBE) chamber, where native oxide would be thermally desorbed and the quantum dots would be grown.
Zhu, Jinli; Tang, Yanfeng; Wang, Gang; Mao, Jiarong; Liu, Zhiduo; Sun, Tongming; Wang, Miao; Chen, Da; Yang, Yucheng; Li, Jipeng; Deng, Yuan; Yang, Siwei
2017-04-26
It is of great significance and importance to explore a mild, clean, and highly efficient universal approach for the synthesis of graphene quantum dots. Herein, we introduced a new green, rapid, and universal preparation approach for graphene quantum dots via the free-radical polymerization of oxygen-containing aromatic compounds under ultraviolet irradiation. This approach had a high yield (86%), and the byproducts are only H 2 O and CO 2 . The obtained graphene quantum dots were well-crystallized and showed remarkable optical and biological properties. The colorful, different-sized graphene quantum dots can be used in fluorescent bioimaging in vitro and in vivo. This approach is suitable not only for the preparation of graphene quantum dots but also for heteroatom-doped graphene quantum dots.
Illustration of Some Consequences of the Indistinguishability of Electrons
ERIC Educational Resources Information Center
Moore, John W.; Davies, William G.
1976-01-01
Discusses how color-coded overhead transparencies of computer-generated dot-density diagrams can be used to illustrate hybrid orbitals and the principle of the indistinguishability of electrons. (MLH)
Co-reductive fabrication of carbon nanodots with high quantum yield for bioimaging of bacteria
Wang, Jiajun; Liu, Xia; Milcovich, Gesmi; Chen, Tzu-Yu; Durack, Edel; Mallen, Sarah; Ruan, Yongming
2018-01-01
A simple and straightforward synthetic approach for carbon nanodots (C-dots) is proposed. The strategy is based on a one-step hydrothermal chemical reduction with thiourea and urea, leading to high quantum yield C-dots. The obtained C-dots are well-dispersed with a uniform size and a graphite-like structure. A synergistic reduction mechanism was investigated using Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. The findings show that using both thiourea and urea during the one-pot synthesis enhances the luminescence of the generated C-dots. Moreover, the prepared C-dots have a high distribution of functional groups on their surface. In this work, C-dots proved to be a suitable nanomaterial for imaging of bacteria and exhibit potential for application in bioimaging thanks to their low cytotoxicity. PMID:29441259
Studies of silicon quantum dots prepared at different substrate temperatures
NASA Astrophysics Data System (ADS)
Al-Agel, Faisal A.; Suleiman, Jamal; Khan, Shamshad A.
2017-03-01
In this research work, we have synthesized silicon quantum dots at different substrate temperatures 193, 153 and 123 K at a fixed working pressure 5 Torr. of Argon gas. The structural studies of these silicon quantum dots have been undertaken using X-ray diffraction, Field Emission Scanning Electron Microscopy (FESEM) and High Resolution Transmission Electron Microscopy (HRTEM). The optical and electrical properties have been studied using UV-visible spectroscopy, Fourier transform infrared (FTIR) spectroscopy, Fluorescence spectroscopy and I-V measurement system. X-ray diffraction pattern of Si quantum dots prepared at different temperatures show the amorphous nature except for the quantum dots synthesized at 193 K which shows polycrystalline nature. FESEM images of samples suggest that the size of quantum dots varies from 2 to 8 nm. On the basis of UV-visible spectroscopy measurements, a direct band gap has been observed for Si quantum dots. FTIR spectra suggest that as-grown Si quantum dots are partially oxidized which is due exposure of as-prepared samples to air after taking out from the chamber. PL spectra of the synthesized silicon quantum dots show an intense peak at 444 nm, which may be attributed to the formation of Si quantum dots. Temperature dependence of dc conductivity suggests that the dc conductivity enhances exponentially by raising the temperature. On the basis above properties i.e. direct band gap, high absorption coefficient and high conductivity, these silicon quantum dots will be useful for the fabrication of solar cells.
NASA Astrophysics Data System (ADS)
Alireza, Samavati; Othaman, Z.; K. Ghoshal, S.; K. Mustafa, M.
2015-02-01
The influences of thermal annealing on the structural and optical features of radio frequency (rf) magnetron sputtered self-assembled Ge quantum dots (QDs) on Si (100) are investigated. Preferentially oriented structures of Ge along the (220) and (111) directions together with peak shift and reduced strain (4.9% to 2.7%) due to post-annealing at 650 °C are discerned from x-ray differaction (XRD) measurement. Atomic force microscopy (AFM) images for both pre-annealed and post-annealed (650 °C) samples reveal pyramidal-shaped QDs (density ˜ 0.26× 1011 cm-2) and dome-shape morphologies with relatively high density ˜ 0.92 × 1011 cm-2, respectively. This shape transformation is attributed to the mechanism of inter-diffusion of Si in Ge interfacial intermixing and strain non-uniformity. The annealing temperature assisted QDs structural evolution is explained using the theory of nucleation and growth kinetics where free energy minimization plays a pivotal role. The observed red-shift ˜ 0.05 eV in addition to the narrowing of the photoluminescence peaks results from thermal annealing, and is related to the effect of quantum confinement. Furthermore, the appearance of a blue-violet emission peak is ascribed to the recombination of the localized electrons in the Ge-QDs/SiO2 or GeOx and holes in the ground state of Ge dots. Raman spectra of both samples exhibit an intense Ge-Ge optical phonon mode which shifts towards higher frequency compared with those of the bulk counterpart. An experimental Raman profile is fitted to the models of phonon confinement and size distribution combined with phonon confinement to estimate the mean dot sizes. A correlation between thermal annealing and modifications of the structural and optical behavior of Ge QDs is established. Tunable growth of Ge QDs with superior properties suitable for optoelectronic applications is demonstrated. Project supported by Ibnu Sina Institute for Fundamental Science Study, Universiti Teknologi Malaysia through Vote Q.J130000.2526.02H94, O5 and Postdoctoral Research Grant.
Vinci, John C; Ferrer, Ivonne M; Guterry, Nathan W; Colón, Verónica M; Destino, Joel F; Bright, Frank V; Colón, Luis A
2015-09-01
We synthesized sub-10 nm carbon nanoparticles (CNPs) consistent with photoluminescent carbon dots (C-dots) from carbon fiber starting material. The production of different C-dots fractions was monitored over seven days. During the course of the reaction, one fraction of C-dots species with relatively high photoluminescence was short-lived, emerging during the first hour of reaction but disappearing after one day of reaction. Isolation of this species during the first hour of the reaction was crucial to obtaining higher-luminescent C-dots species. When the reaction proceeded for one week, the appearance of larger nanostructures was observed over time, with lateral dimensions approaching 200 nm. The experimental evidence suggests that these larger species are formed from small C-dot nanoparticles bridged together by sulfur-based moieties between the C-dot edge groups, as if the C-dots polymerized by cross-linking the edge groups through sulfur bridges. Their size can be tailored by controlling the reaction time. Our results highlight the variety of CNP products, from sub-10 nm C-dots to ~200 nm sulfur-containing carbon nanostructures, that can be produced over time during the oxidation reaction of the graphenic starting material. Our work provides a clear understanding of when to stop the oxidation reaction during the top-down production of C-dots to obtain highly photoluminescent species or a target average particle size.
Structured illumination diffuse optical tomography for noninvasive functional neuroimaging in mice.
Reisman, Matthew D; Markow, Zachary E; Bauer, Adam Q; Culver, Joseph P
2017-04-01
Optical intrinsic signal (OIS) imaging has been a powerful tool for capturing functional brain hemodynamics in rodents. Recent wide field-of-view implementations of OIS have provided efficient maps of functional connectivity from spontaneous brain activity in mice. However, OIS requires scalp retraction and is limited to superficial cortical tissues. Diffuse optical tomography (DOT) techniques provide noninvasive imaging, but previous DOT systems for rodent neuroimaging have been limited either by sparse spatial sampling or by slow speed. Here, we develop a DOT system with asymmetric source-detector sampling that combines the high-density spatial sampling (0.4 mm) detection of a scientific complementary metal-oxide-semiconductor camera with the rapid (2 Hz) imaging of a few ([Formula: see text]) structured illumination (SI) patterns. Analysis techniques are developed to take advantage of the system's flexibility and optimize trade-offs among spatial sampling, imaging speed, and signal-to-noise ratio. An effective source-detector separation for the SI patterns was developed and compared with light intensity for a quantitative assessment of data quality. The light fall-off versus effective distance was also used for in situ empirical optimization of our light model. We demonstrated the feasibility of this technique by noninvasively mapping the functional response in the somatosensory cortex of the mouse following electrical stimulation of the forepaw.
In vivo cation exchange in quantum dots for tumor-specific imaging.
Liu, Xiangyou; Braun, Gary B; Qin, Mingde; Ruoslahti, Erkki; Sugahara, Kazuki N
2017-08-24
In vivo tumor imaging with nanoprobes suffers from poor tumor specificity. Here, we introduce a nanosystem, which allows selective background quenching to gain exceptionally tumor-specific signals. The system uses near-infrared quantum dots and a membrane-impermeable etchant, which serves as a cation donor. The etchant rapidly quenches the quantum dots through cation exchange (ionic etching), and facilitates renal clearance of metal ions released from the quantum dots. The quantum dots are intravenously delivered into orthotopic breast and pancreas tumors in mice by using the tumor-penetrating iRGD peptide. Subsequent etching quenches excess quantum dots, leaving a highly tumor-specific signal provided by the intact quantum dots remaining in the extravascular tumor cells and fibroblasts. No toxicity is noted. The system also facilitates the detection of peritoneal tumors with high specificity upon intraperitoneal tumor targeting and selective etching of excess untargeted quantum dots. In vivo cation exchange may be a promising strategy to enhance specificity of tumor imaging.The imaging of tumors in vivo using nanoprobes has been challenging due to the lack of sufficient tumor specificity. Here, the authors develop a tumor-specific quantum dot system that permits in vivo cation exchange to achieve selective background quenching and high tumor-specific imaging.
Doughty, Michael J
2013-09-01
To assess the corneal endothelium, particularly the polymegethism feature, using the Topcon SP-3000P specular microscope with newer center-dot software. Forty-eight healthy, normal weight, noncontact lens wearers of Asian ethnicity were assessed. Single endothelial images from each subject were processed with center-dot software, reevaluated after correction of obvious errors, and then by manual border marking and planimetry. Endothelial cell density based on average cell area and the coefficient of variation (COV) of cell area (polymegethism) were calculated. Error sources are associated with erroneous location of cell borders (usually creating larger or smaller "cells") or failure to assign cell borders to a marked cell. On the initial application of the center-dot software, the endothelial cell density values ranged from 1822 to 3244 cells per square millimeter (mean, 2644 cells/mm); this range was reduced (eg, 1955-3054 cells/mm; mean 2690 cells/mm on editing or in manual planimetry). The COV values ranged from 17% to 39% (mean, 27.5% ± 5.5%), with one third of the endothelia yielding COV values of greater than or equal to 30%. On editing or in manual planimetry, the COV values were reduced to between 17% and 29% (mean, 24.5% ± 3.2%; P < 0.001). In the use of a center-dot endothelial analysis program with cell border identification, it is likely that at least 1 set of editing steps is required to produce reasonable results.
Design of Low-Complexity and High-Speed Coplanar Four-Bit Ripple Carry Adder in QCA Technology
NASA Astrophysics Data System (ADS)
Balali, Moslem; Rezai, Abdalhossein
2018-07-01
Quantum-dot Cellular Automata (QCA) technology is a suitable technology to replace CMOS technology due to low-power consumption, high-speed and high-density devices. Full adder has an important role in the digital circuit design. This paper presents and evaluates a novel single-layer four-bit QCA Ripple Carry Adder (RCA) circuit. The developed four-bit QCA RCA circuit is based on novel QCA full adder circuit. The developed circuits are simulated using QCADesigner tool version 2.0.3. The simulation results show that the developed circuits have advantages in comparison with existing single-layer and multilayer circuits in terms of cell count, area occupation and circuit latency.
Design of Low-Complexity and High-Speed Coplanar Four-Bit Ripple Carry Adder in QCA Technology
NASA Astrophysics Data System (ADS)
Balali, Moslem; Rezai, Abdalhossein
2018-03-01
Quantum-dot Cellular Automata (QCA) technology is a suitable technology to replace CMOS technology due to low-power consumption, high-speed and high-density devices. Full adder has an important role in the digital circuit design. This paper presents and evaluates a novel single-layer four-bit QCA Ripple Carry Adder (RCA) circuit. The developed four-bit QCA RCA circuit is based on novel QCA full adder circuit. The developed circuits are simulated using QCADesigner tool version 2.0.3. The simulation results show that the developed circuits have advantages in comparison with existing single-layer and multilayer circuits in terms of cell count, area occupation and circuit latency.
Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice
DOE Office of Scientific and Technical Information (OSTI.GOV)
Sobolev, M. M., E-mail: m.sobolev@mail.ioffe.ru; Buyalo, M. S.; Nevedomskiy, V. N.
2015-10-15
The spectral characteristics of a laser with an active region based on a ten-layer system of In(Ga)As/GaAs vertically correlated quantum dots with 4.5-nm GaAs spacer layers between InAs quantum dots are studied under the conditions of spontaneous and stimulated emission, depending on the current and the duration of pump pulses. Data obtained by transmission electron microscopy and electroluminescence and absorption polarization anisotropy measurements make it possible to demonstrate that the investigated system of tunnel-coupled InAs quantum dots separated by thin GaAs barriers represents a quantum-dot superlattice. With an increase in the laser pump current, the electroluminescence intensity increases linearly andmore » the spectral position of the electroluminescence maximum shifts to higher energies, which is caused by the dependence of the miniband density-of-states distribution on the pump current. Upon exceeding the threshold current, multimode lasing via the miniband ground state is observed. One of the lasing modes can be attributed to the zero-phonon line, and the other is determined by the longitudinal-optical phonon replica of quantum-dot emission. The results obtained give evidence that, under conditions of the laser pumping of an In(Ga)As/GaAs quantum-dot superlattice, strong coupling between the discrete electron states in the miniband and optical phonons takes place. This leads to the formation of quantum-dot polarons, resulting from the resonant mixing of electronic states whose energy separation is comparable to the optical-phonon energy.« less
Conditions for observing emergent SU(4) symmetry in a double quantum dot
NASA Astrophysics Data System (ADS)
Nishikawa, Yunori; Curtin, Oliver J.; Hewson, Alex C.; Crow, Daniel J. G.; Bauer, Johannes
2016-06-01
We analyze conditions for the observation of a low-energy SU(4) fixed point in capacitively coupled quantum dots. One problem, due to dots with different couplings to their baths, has been considered by L. Tosi, P. Roura-Bas, and A. A. Aligia, J. Phys.: Condens. Matter 27, 335601 (2015), 10.1088/0953-8984/27/33/335601. They showed how symmetry can be effectively restored via the adjustment of individual gates voltages, but they make the assumption of infinite on-dot and interdot interaction strengths. A related problem is the difference in the magnitudes between the on-dot and interdot strengths for capacitively coupled quantum dots. Here we examine both factors, based on a two-site Anderson model, using the numerical renormalization group to calculate the local spectral densities on the dots and the renormalized parameters that specify the low-energy fixed point. Our results support the conclusions of Tosi et al. that low-energy SU(4) symmetry can be restored, but asymptotically achieved only if the interdot interaction U12 is greater than or of the order of the bandwidth of the coupled conduction bath D , which might be difficult to achieve experimentally. By comparing the SU(4) Kondo results for a total dot occupation ntot=1 and 2, we conclude that the temperature dependence of the conductance is largely determined by the constraints of the Friedel sum rule rather than the SU(4) symmetry and suggest that an initial increase of the conductance with temperature is a distinguishing characteristic feature of an ntot=1 universal SU(4) fixed point.
NASA Astrophysics Data System (ADS)
Roy, Rajarshi; Thapa, Ranjit; Kumar, Gundam Sandeep; Mazumder, Nilesh; Sen, Dipayan; Sinthika, S.; Das, Nirmalya S.; Chattopadhyay, Kalyan K.
2016-04-01
In this work, we have demonstrated the signatures of localized surface distortions and disorders in functionalized graphene quantum dots (fGQD) and consequences in magneto-transport under weak field regime (~1 Tesla) at room temperature. Observed positive colossal magnetoresistance (MR) and its suppression is primarily explained by weak anti-localization phenomenon where competitive valley (inter and intra) dependent scattering takes place at room temperature under low magnetic field; analogous to low mobility disordered graphene samples. Furthermore, using ab-initio analysis we show that sub-lattice sensitive spin-polarized ground state exists in the GQD as a result of pz orbital asymmetry in GQD carbon atoms with amino functional groups. This spin polarized ground state is believed to help the weak anti-localization dependent magneto transport by generating more disorder and strain in a GQD lattice under applied magnetic field and lays the premise for future graphene quantum dot based spintronic applications.In this work, we have demonstrated the signatures of localized surface distortions and disorders in functionalized graphene quantum dots (fGQD) and consequences in magneto-transport under weak field regime (~1 Tesla) at room temperature. Observed positive colossal magnetoresistance (MR) and its suppression is primarily explained by weak anti-localization phenomenon where competitive valley (inter and intra) dependent scattering takes place at room temperature under low magnetic field; analogous to low mobility disordered graphene samples. Furthermore, using ab-initio analysis we show that sub-lattice sensitive spin-polarized ground state exists in the GQD as a result of pz orbital asymmetry in GQD carbon atoms with amino functional groups. This spin polarized ground state is believed to help the weak anti-localization dependent magneto transport by generating more disorder and strain in a GQD lattice under applied magnetic field and lays the premise for future graphene quantum dot based spintronic applications. Electronic supplementary information (ESI) available: UV-Vis spectrum of synthesized fGQDs, reconstructed false color surface topographic images from a high-resolution fGQD TEM lattice; Raman spectra with corresponding Breit-Wigner-Fano (BWF) line fitting of `G band' before and after the application of sTMF, spin density distribution (SDD) with different shapes of a functionalized graphene quantum dot, SDD of the main simulated fGQD model obtained using different exchange correlation functional (PW91, RBPE and LDA). Models of (a) two NH2 molecules adsorbed on a graphene sheet (periodic structure), (b) representing corresponding SPDOS are also provided. Charge density distribution (CDD) with two-dimensional side view contour plots of adsorbed -NH2 and O&z.dbd;C-NH2 on GQD lattice and SPDOS of a main fGQD model with 0.2% strain. See DOI: 10.1039/c5nr09292b
Goyal, Amit
2013-09-17
Novel articles and methods to fabricate same with self-assembled nanodots and/or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic and electrooptical devices is disclosed. Self-assembled nanodots and/or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.
Goyal, Amit , Kang; Sukill, [Knoxville, TN
2012-02-21
Novel articles and methods to fabricate same with self-assembled nanodots and/or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic and electrooptical devices is disclosed. Self-assembled nanodots and/or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.
High performance devices enabled by epitaxial, preferentially oriented, nanodots and/or nanorods
Goyal, Amit [Knoxville, TN
2011-10-11
Novel articles and methods to fabricate same with self-assembled nanodots and/or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic, superconducting and electrooptical devices is disclosed. Self-assembled nanodots and/or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.
2014-01-01
Carbon dots exhibit great potential in applications such as molecular imaging and in vivo molecular tracking. However, how to enhance fluorescence intensity of carbon dots has become a great challenge. Herein, we report for the first time a new strategy to synthesize fluorescent carbon dots (C-dots) with high quantum yields by using ribonuclease A (RNase A) as a biomolecular templating agent under microwave irradiation. The synthesized RNase A-conjugated carbon dots (RNase A@C-dots) exhibited quantum yields of 24.20%. The fluorescent color of the RNase A@C-dots can easily be adjusted by varying the microwave reaction time and microwave power. Moreover, the emission wavelength and intensity of RNase A@C-dots displayed a marked excitation wavelength-dependent character. As the excitation wavelength alters from 300 to 500 nm, the photoluminescence (PL) peak exhibits gradually redshifts from 450 to 550 nm, and the intensity reaches its maximum at an excitation wavelength of 380 nm. Its Stokes shift is about 80 nm. Notably, the PL intensity is gradually decreasing as the pH increases, almost linearly dependent, and it reaches the maximum at a pH = 2 condition; the emission peaks also show clearly a redshift, which may be caused by the high activity and perfective dispersion of RNase A in a lower pH solution. In high pH solution, RNase A tends to form RNase A warped carbon dot nanoclusters. Cell imaging confirmed that the RNase A@C-dots could enter into the cytoplasm through cell endocytosis. 3D confocal imaging and transmission electron microscopy observation confirmed partial RNase A@C-dots located inside the nucleus. MTT and real-time cell electronic sensing (RT-CES) analysis showed that the RNase A@C-dots could effectively inhibit the growth of MGC-803 cells. Intra-tumor injection test of RNase A@C-dots showed that RNase A@C-dots could be used for imaging in vivo gastric cancer cells. In conclusion, the as-prepared RNase A@C-dots are suitable for simultaneous therapy and in vivo fluorescence imaging of nude mice loaded with gastric cancer or other tumors. PMID:25177217
NASA Astrophysics Data System (ADS)
Liu, Huiyang; Wang, Qin; Shen, Guangxia; Zhang, Chunlei; Li, Chao; Ji, Weihang; Wang, Chun; Cui, Daxiang
2014-08-01
Carbon dots exhibit great potential in applications such as molecular imaging and in vivo molecular tracking. However, how to enhance fluorescence intensity of carbon dots has become a great challenge. Herein, we report for the first time a new strategy to synthesize fluorescent carbon dots (C-dots) with high quantum yields by using ribonuclease A (RNase A) as a biomolecular templating agent under microwave irradiation. The synthesized RNase A-conjugated carbon dots (RNase A@C-dots) exhibited quantum yields of 24.20%. The fluorescent color of the RNase A@C-dots can easily be adjusted by varying the microwave reaction time and microwave power. Moreover, the emission wavelength and intensity of RNase A@C-dots displayed a marked excitation wavelength-dependent character. As the excitation wavelength alters from 300 to 500 nm, the photoluminescence (PL) peak exhibits gradually redshifts from 450 to 550 nm, and the intensity reaches its maximum at an excitation wavelength of 380 nm. Its Stokes shift is about 80 nm. Notably, the PL intensity is gradually decreasing as the pH increases, almost linearly dependent, and it reaches the maximum at a pH = 2 condition; the emission peaks also show clearly a redshift, which may be caused by the high activity and perfective dispersion of RNase A in a lower pH solution. In high pH solution, RNase A tends to form RNase A warped carbon dot nanoclusters. Cell imaging confirmed that the RNase A@C-dots could enter into the cytoplasm through cell endocytosis. 3D confocal imaging and transmission electron microscopy observation confirmed partial RNase A@C-dots located inside the nucleus. MTT and real-time cell electronic sensing (RT-CES) analysis showed that the RNase A@C-dots could effectively inhibit the growth of MGC-803 cells. Intra-tumor injection test of RNase A@C-dots showed that RNase A@C-dots could be used for imaging in vivo gastric cancer cells. In conclusion, the as-prepared RNase A@C-dots are suitable for simultaneous therapy and in vivo fluorescence imaging of nude mice loaded with gastric cancer or other tumors.
Self-organization of quantum-dot pairs by high-temperature droplet epitaxy
Holmes, Kyland; Mazur, Yuriy I; Ramsey, Kimberly A; Salamo, Gregory J
2006-01-01
The spontaneously formation of epitaxial GaAs quantum-dot pairs was demonstrated on an AlGaAs surface using Ga droplets as a Ga nano-source. The dot pair formation was attributed to the anisotropy of surface diffusion during high-temperature droplet epitaxy.
Green Dot Public Schools. What Works Clearinghouse Intervention Report
ERIC Educational Resources Information Center
What Works Clearinghouse, 2018
2018-01-01
"Green Dot Public Schools" is a nonprofit organization that operates more than 20 public charter middle and high schools in California, Tennessee, and Washington. The "Green Dot Public Schools" model emphasizes high quality teaching, strong school leadership, a curriculum that prepares students for college, and partnerships…
Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications
Wen, Lin; Qiu, Liping; Wu, Yongxiang; Hu, Xiaoxiao; Zhang, Xiaobing
2017-01-01
Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided. PMID:28788080
Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications.
Wen, Lin; Qiu, Liping; Wu, Yongxiang; Hu, Xiaoxiao; Zhang, Xiaobing
2017-07-28
Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.
Dutt, Ateet; Matsumoto, Yasuhiro; Santana-Rodríguez, G; Ramos, Estrella; Monroy, B Marel; Santoyo Salazar, J
2017-01-04
The impact of the surface reconstruction of the density distribution and photoluminescence of silicon quantum dots (QDs) embedded in a silicon oxide matrix (SiO x ) has been studied. Annealing treatments carried out on the as-deposited samples provoked the effusion of hydrogen species. Moreover, depending on the surrounding density and coalescence of QDs, they resulted in a change in the average size of the particles depending on the initial local environment. The shift in the luminescence spectra all over the visible region (blue, green and red) shows a strong dependence on the resultant change in the size and/or the passivation environment of QDs. Density functional theoretical (DFT) calculations support this fact and explain the possible electronic transitions (HOMO-LUMO gap) involved. Passivation in the presence of oxygen species lowers the band gap of Si 29 and Si 35 nanoclusters up to 1.7 eV, whereas, surface passivation in the environment of hydrogen species increases the band gap up to 4.4 eV. These results show a good agreement with the quantum confinement model described in this work and explain the shift in the luminescence all over the visible region. The results reported here offer vital insight into the mechanism of emission from silicon quantum dots which has been one of the most debated topics in the last two decades. QDs with multiple size distribution in different local environments (band gap) observed in this work could be used for the fabrication of light emission diodes (LEDs) or shift-conversion thin films in third generation efficient tandem solar cells for the maximum absorption of the solar spectrum in different wavelength regions.
Defect states and charge transport in quantum dot solids
Brawand, Nicholas P.; Goldey, Matthew B.; Vörös, Márton; ...
2017-01-16
Defects at the surface of semiconductor quantum dots (QDs) give rise to electronic states within the gap, which are detrimental to charge transport properties of QD devices. We investigated charge transport in silicon quantum dots with deep and shallow defect levels, using ab initio calculations and constrained density functional theory. We found that shallow defects may be more detrimental to charge transport than deep ones, with associated transfer rates differing by up to 5 orders of magnitude for the small dots (1-2 nm) considered here. Hence, our results indicate that the common assumption, that the ability of defects to trapmore » charges is determined by their position in the energy gap of the QD, is too simplistic, and our findings call for a reassessment of the role played by shallow defects in QD devices. Altogether, our results highlight the key importance of taking into account the atomistic structural properties of QD surfaces when investigating transport properties.« less
NASA Astrophysics Data System (ADS)
Wolde, Seyoum; Lao, Yan-Feng; Unil Perera, A. G.; Zhang, Y. H.; Wang, T. M.; Kim, J. O.; Schuler-Sandy, Ted; Tian, Zhao-Bing; Krishna, S.
2017-06-01
We report experimental results showing how the noise in a Quantum-Dot Infrared photodetector (QDIP) and Quantum Dot-in-a-well (DWELL) varies with the electric field and temperature. At lower temperatures (below ˜100 K), the noise current of both types of detectors is dominated by generation-recombination (G-R) noise which is consistent with a mechanism of fluctuations driven by the electric field and thermal noise. The noise gain, capture probability, and carrier life time for bound-to-continuum or quasi-bound transitions in DWELL and QDIP structures are discussed. The capture probability of DWELL is found to be more than two times higher than the corresponding QDIP. Based on the analysis, structural parameters such as the numbers of active layers, the surface density of QDs, and the carrier capture or relaxation rate, type of material, and electric field are some of the optimization parameters identified to improve the gain of devices.
NASA Astrophysics Data System (ADS)
Rezaei, G.; Vaseghi, B.; Doostimotlagh, N. A.
2012-03-01
Simultaneous effects of an on-center hydrogenic impurity and band edge non-parabolicity on intersubband optical absorption coefficients and refractive index changes of a typical GaAs/AlxGa1-x As spherical quantum dot are theoretically investigated, using the Luttinger—Kohn effective mass equation. So, electronic structure and optical properties of the system are studied by means of the matrix diagonalization technique and compact density matrix approach, respectively. Finally, effects of an impurity, band edge non-parabolicity, incident light intensity and the dot size on the linear, the third-order nonlinear and the total optical absorption coefficients and refractive index changes are investigated. Our results indicate that, the magnitudes of these optical quantities increase and their peaks shift to higher energies as the influences of the impurity and the band edge non-parabolicity are considered. Moreover, incident light intensity and the dot size have considerable effects on the optical absorption coefficients and refractive index changes.
Laser printed plasmonic color metasurfaces (Conference Presentation)
NASA Astrophysics Data System (ADS)
Kristensen, Anders; Zhu, Xiaolong; Højlund-Nielsen, Emil; Vannahme, Christoph; Mortensen, N. Asger
2016-09-01
This paper describes color printing on nanoimprinted plasmonic metasurfaces by laser post-writing, for flexible decoration of high volume manufactured plastic products. Laser pulses induce transient local heat generation that leads to melting and reshaping of the imprinted nanostructures. Different surface morphologies that support different plasmonic resonances, and thereby different color appearances, are created by control of the laser pulse energy density. All primary colors can be printed, with a speed of 1 ns per pixel, resolution up to 127,000 dots per inch (DPI) and power consumption down to 0.3 nJ per pixel.
Sun, Bin; Voznyy, Oleksandr; Tan, Hairen; Stadler, Philipp; Liu, Mengxia; Walters, Grant; Proppe, Andrew H; Liu, Min; Fan, James; Zhuang, Taotao; Li, Jie; Wei, Mingyang; Xu, Jixian; Kim, Younghoon; Hoogland, Sjoerd; Sargent, Edward H
2017-07-01
Application of pseudohalogens in colloidal quantum dot (CQD) solar-cell active layers increases the solar-cell performance by reducing the trap densities and implementing thick CQD films. Pseudohalogens are polyatomic analogs of halogens, whose chemistry allows them to substitute halogen atoms by strong chemical interactions with the CQD surfaces. The pseudohalide thiocyanate anion is used to achieve a hybrid surface passivation. A fourfold reduced trap state density than in a control is observed by using a suite of field-effect transistor studies. This translates directly into the thickest CQD active layer ever reported, enabled by enhanced transport lengths in this new class of materials, and leads to the highest external quantum efficiency, 80% at the excitonic peak, compared with previous reports of CQD solar cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Growth and structure of In{sub 0.5}Ga{sub 0.5}Sb quantum dots on GaP(001)
DOE Office of Scientific and Technical Information (OSTI.GOV)
Sala, E. M.; Stracke, G.; Schlichting, S.
2016-09-05
Stranski-Krastanov (SK) growth of In{sub 0.5}Ga{sub 0.5}Sb quantum dots (QDs) on GaP(001) by metalorganic vapor phase epitaxy is demonstrated. A thin GaAs interlayer prior to QD deposition enables QD nucleation. The impact of a short Sb-flush before supplying InGaSb is investigated. QD growth gets partially suppressed for GaAs interlayer thicknesses below 6 monolayers. QD densities vary from 5 × 10{sup 9} to 2 × 10{sup 11} cm{sup −2} depending on material deposition and Sb-flush time. When In{sub 0.5}Ga{sub 0.5}Sb growth is carried out without Sb-flush, the QD density is generally decreased, and up to 60% larger QDs are obtained.
Irreducible Green's functions method for a quantum dot coupled to metallic and superconducting leads
NASA Astrophysics Data System (ADS)
Górski, Grzegorz; Kucab, Krzysztof
2017-05-01
Using irreducible Green's functions (IGF) method we analyse the Coulomb interaction dependence of the spectral functions and the transport properties of a quantum dot coupled to isotropic superconductor and metallic leads (SC-QD-N). The irreducible Green's functions method is the modification of classical equation of motion technique. The IGF scheme is based on differentiation of double-time Green's functions, both over the primary and secondary times. The IGF method allows to obtain the spectral functions for equilibrium and non-equilibrium impurity Anderson model used for SC-QD-N system. By the numerical computations, we show the change of spectral and the anomalous densities under the influence of the Coulomb interactions. The observed sign change of the anomalous spectral density can be used as the criterion of the SC singlet-Kondo singlet transition.
NASA Astrophysics Data System (ADS)
Kozhevnikov, I. V.; Buzmakov, A. V.; Siewert, F.; Tiedtke, K.; Störmer, M.; Samoylova, L.; Sinn, H.
2017-05-01
Simple analytic equation is deduced to explain new physical phenomenon detected experimentally: growth of nano-dots (40-55 nm diameter, 8-13 nm height, 9.4 dots/μm2 surface density) on the grazing incidence mirror surface under the three years irradiation by the free electron laser FLASH (5-45 nm wavelength, 3 degrees grazing incidence angle). The growth model is based on the assumption that the growth of nano-dots is caused by polymerization of incoming hydrocarbon molecules under the action of incident photons directly or photoelectrons knocked out from a mirror surface. The key feature of our approach consists in that we take into account the radiation intensity variation nearby a mirror surface in an explicit form, because the polymerization probability is proportional to it. We demonstrate that the simple analytic approach allows to explain all phenomena observed in experiment and to predict new effects. In particular, we show that the nano-dots growth depends crucially on the grazing angle of incoming beam and its intensity: growth of nano-dots is observed in the limited from above and below intervals of the grazing angle and the radiation intensity. Decrease in the grazing angle by 1 degree only (from 3 to 2 degree) may result in a strong suppression of nanodots growth and their total disappearing. Similarly, decrease in the radiation intensity by several times (replacement of free electron laser by synchrotron) results also in disappearing of nano-dots growth.
Titanium-based silicide quantum dot superlattices for thermoelectrics applications.
Savelli, Guillaume; Stein, Sergio Silveira; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent; Dilhaire, Stefan; Pernot, Gilles
2015-07-10
Ti-based silicide quantum dot superlattices (QDSLs) are grown by reduced-pressure chemical vapor deposition. They are made of titanium-based silicide nanodots scattered in an n-doped SiGe matrix. This is the first time that such nanostructured materials have been grown in both monocrystalline and polycrystalline QDSLs. We studied their crystallographic structures and chemical properties, as well as the size and the density of the quantum dots. The thermoelectric properties of the QDSLs are measured and compared to equivalent SiGe thin films to evaluate the influence of the nanodots. Our studies revealed an increase in their thermoelectric properties-specifically, up to a trifold increase in the power factor, with a decrease in the thermal conductivity-making them very good candidates for further thermoelectric applications in cooling or energy-harvesting fields.
Wigner crystalline edges in ν<~1 quantum dots
NASA Astrophysics Data System (ADS)
Goldmann, Eyal; Renn, Scot R.
1999-12-01
We investigate the edge reconstruction phenomenon believed to occur in quantum dots in the quantum Hall regime when the filling fraction is ν<~1. Our approach involves the examination of large dots (<= 40 electrons) using a partial diagonalization technique in which the occupancies of the deep interior orbitals are frozen. To interpret the results of this calculation, we evaluate the overlap between the diagonalized ground state and a set of trial wave functions which we call projected necklace (PN) states. A PN state is simply the angular momentum projection of a maximum density droplet surrounded by a ring of localized electrons. Our calculations reveal that PN states have up to 99% overlap with the diagonalized ground states, and are lower in energy than the states identified in Chamon and Wen's study of the edge reconstruction.
Resonant electronic excitation energy transfer by exchange mechanism in the quantum dot system
NASA Astrophysics Data System (ADS)
Chikalova-Luzina, O. P.; Samosvat, D. M.; Vyatkin, V. M.; Zegrya, G. G.
2017-11-01
A microscopic theory of nonradiative resonance energy transfer between spherical A3B5 semiconductor quantum dots by the exchange mechanism is suggested. The interdot Coulomb interaction is taken into consideration. It is assumed that the quantum dot-donor and the quantum dot-acceptor are made from the same A3B5 compound and are embedded in the matrix of another material that produces potential barriers for electrons and holes. The dependences of the energy transfer rate on the quantum-dot system parameters are found in the frame of the Kane model that provides the most adequate description of the real spectra of A3B5 semiconductors. The analytical treatment is carried out with using the density matrix method, which enabled us to perform an energy transfer analysis both in the weak-interaction approximation and in the strong-interaction approximation. The numerical calculations showed the saturation of the energy transfer rate at the distances between the donor and the acceptor approaching the contact one. The contributions of the exchange and direct Coulomb intractions can be of the same order at the small distances and can have the same value in the saturation range.
NASA Astrophysics Data System (ADS)
El Harouny, El Hassan; Nakra Mohajer, Soukaina; Ibral, Asmaa; El Khamkhami, Jamal; Assaid, El Mahdi
2018-05-01
Eigenvalues equation of hydrogen-like off-center single donor impurity confined in polarized homogeneous hemispherical quantum dot deposited on a wetting layer, capped by insulated matrix and submitted to external uniform electric field is solved in the framework of the effective mass approximation. An infinitely deep potential is used to describe effects of quantum confinement due to conduction band offsets at surfaces where quantum dot and surrounding materials meet. Single donor ground state total and binding energies in presence of electric field are determined via two-dimensional finite difference approach and Ritz-Hassé variation principle. For the latter method, attractive coulomb correlation between electron and ionized single donor is taken into account in the expression of trial wave function. It appears that off-center single dopant binding energy, spatial extension and radial probability density are strongly dependent on hemisphere radius and single dopant position inside quantum dot. Influence of a uniform electric field is also investigated. It shows that Stark effect appears even for very small size dots and that single dopant energy shift is more significant when the single donor is near hemispherical surface.
Optical gain in colloidal quantum dots achieved with direct-current electrical pumping
DOE Office of Scientific and Technical Information (OSTI.GOV)
Lim, Jaehoon; Park, Young-Shin; Klimov, Victor Ivanovich
Chemically synthesized semiconductor quantum dots (QDs) can potentially enable solution-processable laser diodes with a wide range of operational wavelengths, yet demonstrations of lasing from the QDs are still at the laboratory stage. An important challenge—realization of lasing with electrical injection—remains unresolved, largely due to fast nonradiative Auger recombination of multicarrier states that represent gain-active species in the QDs. Here in this paper, we present population inversion and optical gain in colloidal nanocrystals realized with direct-current electrical pumping. Using continuously graded QDs, we achieve a considerable suppression of Auger decay such that it can be outpaced by electrical injection. Further, wemore » apply a special current-focusing device architecture, which allows us to produce high current densities (j) up to ~18 A cm -2 without damaging either the QDs or the injection layers. The quantitative analysis of electroluminescence and current-modulated transmission spectra indicates that with j = 3-4 A cm -2 we achieve the population inversion of the band-edge states.« less
Optical gain in colloidal quantum dots achieved with direct-current electrical pumping
NASA Astrophysics Data System (ADS)
Lim, Jaehoon; Park, Young-Shin; Klimov, Victor I.
2018-01-01
Chemically synthesized semiconductor quantum dots (QDs) can potentially enable solution-processable laser diodes with a wide range of operational wavelengths, yet demonstrations of lasing from the QDs are still at the laboratory stage. An important challenge--realization of lasing with electrical injection--remains unresolved, largely due to fast nonradiative Auger recombination of multicarrier states that represent gain-active species in the QDs. Here we present population inversion and optical gain in colloidal nanocrystals realized with direct-current electrical pumping. Using continuously graded QDs, we achieve a considerable suppression of Auger decay such that it can be outpaced by electrical injection. Further, we apply a special current-focusing device architecture, which allows us to produce high current densities (j) up to ~18 A cm-2 without damaging either the QDs or the injection layers. The quantitative analysis of electroluminescence and current-modulated transmission spectra indicates that with j = 3-4 A cm-2 we achieve the population inversion of the band-edge states.
Sun, Yue; Zhou, Yunjie; Zhu, Cheng; Hu, Lulu; Han, Mumei; Wang, Aoqi; Huang, Hui; Liu, Yang; Kang, Zhenhui
2017-05-04
Highly efficient electrocatalysts remain huge challenges in direct methanol fuel cells (DMFCs). Here, a Pt-Co 3 O 4 -CDs/C composite was fabricated as an anode electrocatalyst with low Pt content (12 wt%) by using carbon dots (CDs) and Co 3 O 4 nanoparticles as building blocks. The Pt-Co 3 O 4 -CDs/C composite catalyst shows a significantly enhanced electrocatalytic activity (1393.3 mA mg -1 Pt), durability (over 4000 s) and CO-poisoning tolerance. The superior catalytic activity should be attributed to the synergistic effect of CDs, Pt and Co 3 O 4 . Furthermore, the Pt-Co 3 O 4 -CDs/C catalyst was integrated into a single cell, which exhibits a maximum power density of 45.6 mW cm -2 , 1.7 times the cell based on the commercial 20 wt% Pt/C catalyst.
Optical gain in colloidal quantum dots achieved with direct-current electrical pumping
Lim, Jaehoon; Park, Young-Shin; Klimov, Victor Ivanovich
2017-11-20
Chemically synthesized semiconductor quantum dots (QDs) can potentially enable solution-processable laser diodes with a wide range of operational wavelengths, yet demonstrations of lasing from the QDs are still at the laboratory stage. An important challenge—realization of lasing with electrical injection—remains unresolved, largely due to fast nonradiative Auger recombination of multicarrier states that represent gain-active species in the QDs. Here in this paper, we present population inversion and optical gain in colloidal nanocrystals realized with direct-current electrical pumping. Using continuously graded QDs, we achieve a considerable suppression of Auger decay such that it can be outpaced by electrical injection. Further, wemore » apply a special current-focusing device architecture, which allows us to produce high current densities (j) up to ~18 A cm -2 without damaging either the QDs or the injection layers. The quantitative analysis of electroluminescence and current-modulated transmission spectra indicates that with j = 3-4 A cm -2 we achieve the population inversion of the band-edge states.« less
Hybrid organic-inorganic inks flatten the energy landscape in colloidal quantum dot solids
NASA Astrophysics Data System (ADS)
Liu, Mengxia; Voznyy, Oleksandr; Sabatini, Randy; García de Arquer, F. Pelayo; Munir, Rahim; Balawi, Ahmed Hesham; Lan, Xinzheng; Fan, Fengjia; Walters, Grant; Kirmani, Ahmad R.; Hoogland, Sjoerd; Laquai, Frédéric; Amassian, Aram; Sargent, Edward H.
2017-02-01
Bandtail states in disordered semiconductor materials result in losses in open-circuit voltage (Voc) and inhibit carrier transport in photovoltaics. For colloidal quantum dot (CQD) films that promise low-cost, large-area, air-stable photovoltaics, bandtails are determined by CQD synthetic polydispersity and inhomogeneous aggregation during the ligand-exchange process. Here we introduce a new method for the synthesis of solution-phase ligand-exchanged CQD inks that enable a flat energy landscape and an advantageously high packing density. In the solid state, these materials exhibit a sharper bandtail and reduced energy funnelling compared with the previous best CQD thin films for photovoltaics. Consequently, we demonstrate solar cells with higher Voc and more efficient charge injection into the electron acceptor, allowing the use of a closer-to-optimum bandgap to absorb more light. These enable the fabrication of CQD solar cells made via a solution-phase ligand exchange, with a certified power conversion efficiency of 11.28%. The devices are stable when stored in air, unencapsulated, for over 1,000 h.
NASA Astrophysics Data System (ADS)
Santos, Joao
2017-10-01
Powerful laser-plasma processes are explored to generate discharge currents of a few 100 kA in coil targets, yielding magnetostatic fields (B-fields) in the kTesla range. The B-fields are measured by proton-deflectometry and high-frequency bandwidth B-dot probes. According to our modeling, the quasi-static currents are provided from hot electron ejection from the laser-irradiated surface, accounting for the space charge neutralization and the plasma magnetization. The major control parameter is the laser irradiance Iλ2 . The B-fields ns-scale is long enough to magnetize secondary targets through resistive diffusion. We applied it in experiments of laser-generated relativistic electron transport into solid dielectric targets, yielding an unprecedented enhancement of a factor 5 on the energy-density flux at 60 µm depth, compared to unmagnetized transport conditions. These studies pave the ground for magnetized high-energy density physics investigations, related to laser-generated secondary sources of radiation and/or high-energy particles and their transport, to high-gain fusion energy schemes and to laboratory astrophysics. We acknowledge funding from French National Agency for Research (ANR), Grant TERRE ANR-2011-BS04-014, and from EUROfusion Consortium, European Union's Horizon 2020 research and innovation programme, Grant 633053.
Charging effects in single InP/GaInP baby dots
NASA Astrophysics Data System (ADS)
Persson, Jonas
2001-03-01
It has recently been demonstrated that the matrix material plays a major role for the physical behavior of self-assembled InP/GaInP quantum dots. As the "intrinsically" n-type GaInP matrix fills the quantum dot with electrons the spectral behavior of the dot dramatically changes. For the larger, fully developed dots, the charging gives rise to several broad lines. With an external bias it is possible to reduce the electron population of the dot. For smaller dots, baby dots, we show the possibility of dramatically changing the appearance of the dot spectrum by a precise tuning of the size of the quantum dot. When the dot is small enough it is uncharged and the spectrum is very similar to other material systems, whereas a slightly larger dot is charged and the number of lines is dramatically increased. We present high spectral resolution photoluminescence measurements of individual InP/GaInP baby-dots and k\\cdotp calculations including direct and exchange interactions.
Kataoka, M; Schneble, R J; Thorn, A L; Barnes, C H W; Ford, C J B; Anderson, D; Jones, G A C; Farrer, I; Ritchie, D A; Pepper, M
2007-01-26
We use a pulse of surface acoustic waves (SAWs) to control the electron population and depopulation of a quantum dot. The barriers between the dot and reservoirs are set high to isolate the dot. Within a time scale of approximately 100 s the dot can be set to a nonequilibrium charge state, where an empty (occupied) level stays below (above) the Fermi energy. A pulse containing a fixed number of SAW periods is sent through the dot, controllably changing the potential, and hence the tunneling probability, to add (remove) an electron to (from) the dot.
Hu, Meixin; Qi, Jianrong; Ruan, Jing; Shen, Guangxia
2018-06-01
Carbon dots, as a potential substitute for semiconductor quantum dots, have drawn great interest in recent years. The preparation of fluorescent carbon dots has been made easy with many significant advances, but the complicated purifying processes, low quantum yield, and blue emission wavelength still limit its wider application in biosensors, biomedicine, and photonic devices. Here we report a strategy to synthesis Gd-doped carbon dots (Gd-Cdots) of super-high quantum yield with a microwave assisted hydrothermal method. The Gd-Cdots, with a diameter of 47∼8 nm, can be purified easily with conventional centrifugal techniques. Carbon microparticles (CMPs) have also been synthesized with a similar procedure. Meanwhile, we demonstrated a novel "turn-off-on" fluorescent biosensor, which has been developed for highly sensitive detection of glucose using Gd-doped carbon dots as probes. The proposed biosensor has exhibited low-cost and non-toxic properties, with high sensitivity and good specificity. In addition, the results in real blood samples further confirmed it as a promising application in diabetes diagnosis.
Synthesis and Characterization of Mercaptoacetic Acid Capped Cadmium Sulphide Quantum Dots.
Wageh, S; Maize, Mai; Donia, A M; Al-Ghamdi, Ahmed A; Umar, Ahmad
2015-12-01
This paper reports the facile synthesis and detailed characterization of mercaptoacetic acid capped cadmium sulphide (CdS) quantum dots using various cadmium precursors. The mercaptoacetic acid capped CdS quantum dots were prepared by facile and simple wet chemical method and characterized by several techniques such as energy dispersive spectroscopy (EDS), X-ray diffraction, Fourier transform infrared (FTIR) spectroscopy, UV-vis. spectroscopy, photoluminescence spectroscopy, high-resolution transmission microscopy (HRTEM) and thremogravimetric analysis. The EDS studies revealed that the prepared quantum dots possess higher atomic percentage of sulfur compared to cadmium due to the coordination of thiolate to the quantum dots surfaces. The X-ray and absorption analyses exhibited that the size of quantum dots prepared by cadmium acetate is larger than the quantum dots prepared by cadmium chloride and cadmium nitrate. The increase in size can be attributed to the low stability constant of cadmium acetate in comparison with cadmium chloride and cadmium nitrate. The FTIR and thermogravimetric analysis showed that the nature of capping molecule on the surface of quantum dots are different depending on the cadmium precursors which affect the emission from CdS quantum dots. Photoemission spectroscopy revealed that the emission of quantum dots prepared by cadmium acetate has high intensity band edge emission along with low intensity trapping state emission. However the CdS quantum dots prepared by cadmium chloride and cadmium nitrate produced only trapping state emissions.
Organic Dots Based on AIEgens for Two-Photon Fluorescence Bioimaging.
Lou, Xiaoding; Zhao, Zujin; Tang, Ben Zhong
2016-12-01
Two-photon fluorescence imaging technique is a powerful bioanalytical approach in terms of high photostability, low photodamage, high spatiotemporal resolution. Recently, fluorescent organic dots comprised of organic emissive cores and a polymeric matrix are emerging as promising contrast reagents for two-photon fluorescence imaging, owing to their numerous merits of high and tunable fluorescence, good biocompatibility, strong photobleaching resistance, and multiple surface functionality. The emissive core is crucial for organic dots to get high brightness but many conventional chromophores often encounter a severe problem of fluorescence quenching when they form aggregates. To solve this problem, fluorogens featuring aggregation-induced emission (AIE) can fluoresce strongly in aggregates, and thus become ideal candidates for fluorescent organic dots. In addition, two-photon absorption property of the dots can be readily improved by just increase loading contents of AIE fluorogen (AIEgen). Hence, organic dots based on AIEgens have exhibited excellent performances in two-photon fluorescence in vitro cellular imaging, and in vivo vascular architecture visualization of mouse skin, muscle, brain and skull bone. In view of the rapid advances in this important research field, here, we highlight representative fluorescent organic dots with an emissive core of AIEgen aggregate, and discuss their great potential in bioimaging applications. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Schroder, P
1997-01-01
The author critiques the way population density is represented in school atlases, focusing on those used in German-speaking countries. After a discussion of the methodological problems underlying such representations, he selects examples from several German atlases to illustrate the transmission of contradictory, misleading, or out-of-date information. He also suggests ways to improve this situation, including better teaching of underlying cartographical issues and the use of a dot system to illustrate population density.
Method for Estimating the Charge Density Distribution on a Dielectric Surface.
Nakashima, Takuya; Suhara, Hiroyuki; Murata, Hidekazu; Shimoyama, Hiroshi
2017-06-01
High-quality color output from digital photocopiers and laser printers is in strong demand, motivating attempts to achieve fine dot reproducibility and stability. The resolution of a digital photocopier depends on the charge density distribution on the organic photoconductor surface; however, directly measuring the charge density distribution is impossible. In this study, we propose a new electron optical instrument that can rapidly measure the electrostatic latent image on an organic photoconductor surface, which is a dielectric surface, as well as a novel method to quantitatively estimate the charge density distribution on a dielectric surface by combining experimental data obtained from the apparatus via a computer simulation. In the computer simulation, an improved three-dimensional boundary charge density method (BCM) is used for electric field analysis in the vicinity of the dielectric material with a charge density distribution. This method enables us to estimate the profile and quantity of the charge density distribution on a dielectric surface with a resolution of the order of microns. Furthermore, the surface potential on the dielectric surface can be immediately calculated using the obtained charge density. This method enables the relation between the charge pattern on the organic photoconductor surface and toner particle behavior to be studied; an understanding regarding the same may lead to the development of a new generation of higher resolution photocopiers.
Kuo, Wen-Shuo; Chen, Hua-Han; Chen, Shih-Yao; Chang, Chia-Yuan; Chen, Pei-Chi; Hou, Yung-I; Shao, Yu-Ting; Kao, Hui-Fang; Lilian Hsu, Chih-Li; Chen, Yi-Chun; Chen, Shean-Jen; Wu, Shang-Rung; Wang, Jiu-Yao
2017-03-01
Reactive oxygen species is the main contributor to photodynamic therapy. The results of this study show that a nitrogen-doped graphene quantum dot, serving as a photosensitizer, was capable of generating a higher amount of reactive oxygen species than a nitrogen-free graphene quantum dot in photodynamic therapy when photoexcited for only 3 min of 670 nm laser exposure (0.1 W cm -2 ), indicating highly improved antimicrobial effects. In addition, we found that higher nitrogen-bonding compositions of graphene quantum dots more efficiently performed photodynamic therapy actions than did the lower compositions that underwent identical treatments. Furthermore, the intrinsically emitted luminescence from nitrogen-doped graphene quantum dots and high photostability simultaneously enabled it to act as a promising contrast probe for tracking and localizing bacteria in biomedical imaging. Thus, the dual modality of nitrogen-doped graphene quantum dots presents possibilities for future clinical applications, and in particular multidrug resistant bacteria. Copyright © 2016 Elsevier Ltd. All rights reserved.
Tulsani, Srikanth Reddy; Rath, Arup Kumar
2018-07-15
The solution-processed quantum dot (QD) solar cell technology has seen significant advancements in recent past to emerge as a potential contender for the next generation photovoltaic technology. In the development of high performance QD solar cell, the surface ligand chemistry has played the important role in controlling the doping type and doping density of QD solids. For instance, lead sulfide (PbS) QDs which is at the forefront of QD solar cell technology, can be made n-type or p-type respectively by using iodine or thiol as the surfactant. The advancements in surface ligand chemistry enable the formation of p-n homojunction of PbS QDs layers to attain high solar cell performances. It is shown here, however, that poor Fermi level alignment of thiol passivated p-type PbS QD hole transport layer with the n-type PbS QD light absorbing layer has rendered the photovoltaic devices from realizing their full potential. Here we develop a control surface oxidation technique using facile ultraviolet ozone treatment to increase the p-doping density in a controlled fashion for the thiol passivated PbS QD layer. This subtle surface modification tunes the Fermi energy level of the hole transport layer to deeper values to facilitate the carrier extraction and voltage generation in photovoltaic devices. In photovoltaic devices, the ultraviolet ozone treatment resulted in the average gain of 18% in the power conversion efficiency with the highest recorded efficiency of 8.98%. Copyright © 2018 Elsevier Inc. All rights reserved.
Double Tunneling Injection Quantum Dot Lasers for High Speed Operation
2017-10-23
Double Tunneling-Injection Quantum Dot Lasers for High -Speed Operation The views, opinions and/or findings contained in this report are those of...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6...State University Title: Double Tunneling-Injection Quantum Dot Lasers for High -Speed Operation Report Term: 0-Other Email: asryan@vt.edu Distribution
Wright, Alison J; Whitwell, Sophia C L; Takeichi, Chika; Hankins, Matthew; Marteau, Theresa M
2009-02-01
Numeracy, the ability to process basic mathematical concepts, may affect responses to graphical displays of health risk information. Displays of probabilistic risk information using grouped dots are easier to understand than displays using dispersed dots. However, dispersed dots may better convey the randomness with which health threats occur, so increasing perceived susceptibility. We hypothesized that low numeracy participants would better understand risks presented using grouped dot displays, while high numeracy participants would have good understanding, regardless of display type. Moreover, we predicted that dispersed dot displays, in contrast to grouped dot displays, would increase risk perceptions and worry only for highly numerate individuals. One hundred and forty smokers read vignettes asking them to imagine being at risk of Crohn's disease, in a 2(display type: dispersed/grouped dots) x 3(risk magnitude: 3%/6%/50%) x 2(numeracy: high/low) design. They completed measures of risk comprehension, perceived susceptibility and worry. More numerate participants had better objective risk comprehension, but this effect was not moderated by display type. There was marginally significant support for the predicted numeracy x display type interaction for worry about Crohn's disease, but not for perceived susceptibility to the condition. Dispersed dot displays somewhat increase worry in highly numerate individuals, but only numeracy influenced objective risk comprehension. The most effective display type for communicating risk information will depend on the numeracy of the population and the goal(s) of the communication.
Yang, Xiaomin; Wan, Lei; Xiao, Shuaigang; Xu, Yuan; Weller, Dieter K
2009-07-28
The directed self-assembly of block copolymer (BCP) offers a new route to perfect nanolithographic patterning at sub-50 nm length scale with molecular scale precision. We have explored the feasibility of using the BCP approach versus the conventional electron beam (e-beam) lithography to create highly dense dot patterns for bit-patterned media (BPM) applications. Cylinder-forming poly(styrene-b-methyl methacrylate) (PS-b-PMMA) directly self-assembled on a chemically prepatterned substrate. The nearly perfect hexagonal arrays of perpendicularly oriented cylindrical pores at a density of approximately 1 Terabit per square inch (Tb/in.(2)) are achieved over an arbitrarily large area. Considerable gains in the BCP process are observed relative to the conventional e-beam lithography in terms of the dot size variation, the placement accuracy, the pattern uniformity, and the exposure latitude. The maximum dimensional latitude in the cylinder-forming BCP patterns and the maximum skew angle that the BCP can tolerate have been investigated for the first time. The dimensional latitude restricts the formation of more than one lattice configuration in certain ranges. More defects in BCP patterns are observed when using low molecular weight BCP materials or on non-hexagonal prepatterns due to the dimensional latitude restriction. Finally, the limitations and challenges in the BCP approach that are associated with BPM applications will be briefly discussed.
Li, Zhiming; Huang, Peng; Lin, Jing; He, Rong; Liu, Bing; Zhang, Xiaomin; Yang, Sen; Xi, Peng; Zhang, Xuejun; Ren, Qiushi; Cui, Daxiang
2010-08-01
Angiogenesis is essential for the development of malignant tumors and provides important targets for tumor diagnosis and therapy. Quantum dots have been broadly investigated for their potential application in cancer molecular imaging. In present work, CdSe quantum dots were synthesized, polyamidoamine dendrimers were used to modify surface of quantum dots and improve their solubility in water solution. Then, dendrimer-modified CdSe quantum dots were conjugated with arginine-glycine-aspartic acid (RGD) peptides. These prepared nanoprobes were injected into nude mice loaded with melanoma (A375) tumor xenografts via tail vessels, IVIS imaging system was used to image the targeting and bio-distribution of as-prepared nanoprobes. The dendrimer-modified quantum dots exhibit water-soluble, high quantum yield, and good biocompatibility. RGD-conjugated quantum dots can specifically target human umbilical vein endothelial cells (HUVEC) and A375 melanoma cells, as well as nude mice loaded with A735 melanoma cells. High-performance RGD-conjugated dendrimers modified quantum dot-based nanoprobes have great potential in application such as tumor diagnosis and therapy.
NASA Astrophysics Data System (ADS)
Feng, Lingyan; Sun, Hanjun; Ren, Jinsong; Qu, Xiaogang
2016-03-01
Photoluminescent carbon dots (c-dots) have recently attracted growing interest as a new member of the carbon-nanomaterial family. Here, we report for the first time that c-dot-decorated TiO2 nanotube arrays (c-dot/TiNTs) exhibit highly enhanced abilities regarding photo/voltage-induced organic pollutant degradation and bacterial inactivation. By applying UV irradiation (365 nm) or an electrochemical potential over 3 V (versus Ag/AgCl), an organic dye and a herbicide were efficiently degraded. Moreover, the inactivation of Gram-positive S. aureus and Gram-negative E. coli bacteria was realized on a c-dot/TiNT film. The c-dots were able to absorb light efficiently resulting in multiple exciton generation and also a reduction in the recombination of the e-/h+ pair produced in c-dot/TiNT film during photo/voltage-induced degradation. It was also possible to readily regenerate the surface using ultraviolet light irradiation, leaving the whole film structure undamaged and with high reproducibility and stability.
NASA Astrophysics Data System (ADS)
Shen, Huaibin; Zheng, Ying; Wang, Hongzhe; Xu, Weiwei; Qian, Lei; Yang, Yixing; Titov, Alexandre; Hyvonen, Jake; Li, Lin Song
2013-11-01
In this paper, we present an innovative method for the synthesis of CdTe/CdSe type-II core/shell structure quantum dots (QDs) using ‘greener’ chemicals. The PL of CdTe/CdSe type-II core/shell structure QDs ranges from 600 to 820 nm, and the as-synthesized core/shell structures show narrow size distributions and stable and high quantum yields (50-75%). Highly efficient near-infrared light-emitting diodes (LEDs) have been demonstrated by employing the CdTe/CdSe type-II core/shell QDs as emitters. The devices fabricated based on these type-II core/shell QDs show color-saturated near-infrared emission from the QD layers, a low turn-on voltage of 1.55 V, an external quantum efficiency (EQE) of 1.59%, and a current density and maximum radiant emittance of 2.1 × 103 mA cm-2 and 17.7 mW cm-2 at 8 V it is the first report to use type-II core/shell QDs as near-infrared emitters and these results may offer a practicable platform for the realization of near-infrared QD-based light-emitting diodes, night-vision-readable displays, and friend/foe identification system.
Abbas, Muhammad A; Basit, Muhammad A; Park, Tae Joo; Bang, Jin Ho
2015-04-21
Despite the potential of PbS quantum dots (QDs) as sensitizers for quantum-dot-sensitized solar cells (QDSSCs), achieving a high photocurrent density over 30 mA cm(-2) remains a challenging task in PbS-sensitized solar cells. In contrast to previous attempts, where Hg(2+)-doping or multi-step post-treatment is necessary, we are capable of achieving a high photocurrent exceeding 30 mA cm(-2) simply by manipulating the successive ionic layer adsorption and reaction (SILAR) method. We show that controlling temperature at which SILAR is performed is critical to obtain a higher and more uniform coverage of PbS QDs over a mesoporous TiO2 film. The deposition of a CdS inter-layer between TiO2 and PbS is found to be an effective means of ensuring high photocurrent and stability. Not only does this modification improve the light absorption capability of the photoanode, but it also has a significant effect on charge recombination and electron injection efficiency at the PbS/TiO2 interface according to our in-depth study using electrochemical impedance spectroscopy (EIS). The implication of subtle changes in the interfacial events via modified SILAR conditions for PbS-sensitized solar cells is discussed.
A novel power-efficient high-speed clock management unit using quantum-dot cellular automata
NASA Astrophysics Data System (ADS)
Abutaleb, M. M.
2017-04-01
Quantum-dot cellular automata (QCA) is one of the most attractive alternatives for complementary metal-oxide semiconductor technology. The QCA widely supports a new paradigm in the field of nanotechnology that has the potential for high density, low power, and high speed. The clock manager is an essential building block in the new microwave and radio frequency integrated circuits. This paper describes a novel QCA-based clock management unit (CMU) that provides innovative clocking capabilities. The proposed CMU is achieved by utilizing edge-triggered D-type flip-flops (D-FFs) in the design of frequency synthesizer and phase splitter. Edge-triggered D-FF structures proposed in this paper have the successful QCA implementation and simulation with the least complexity and power dissipation as compared to earlier structures. The frequency synthesizer is used to generate new clock frequencies from the reference clock frequency based on a combination of power-of-two frequency dividers. The phase splitter is integrated with the frequency synthesizer to generate four clock signals that are 90o out of phase with each other. This paper demonstrates that the proposed QCA CMU structure has a superior performance. Furthermore, the proposed CMU is straightforwardly scalable due to the use of modular component architecture.
An All-Solution-Based Hybrid CMOS-Like Quantum Dot/Carbon Nanotube Inverter.
Shulga, Artem G; Derenskyi, Vladimir; Salazar-Rios, Jorge Mario; Dirin, Dmitry N; Fritsch, Martin; Kovalenko, Maksym V; Scherf, Ullrich; Loi, Maria A
2017-09-01
The development of low-cost, flexible electronic devices is subordinated to the advancement in solution-based and low-temperature-processable semiconducting materials, such as colloidal quantum dots (QDs) and single-walled carbon nanotubes (SWCNTs). Here, excellent compatibility of QDs and SWCNTs as a complementary pair of semiconducting materials for fabrication of high-performance complementary metal-oxide-semiconductor (CMOS)-like inverters is demonstrated. The n-type field effect transistors (FETs) based on I - capped PbS QDs (V th = 0.2 V, on/off = 10 5 , S S-th = 114 mV dec -1 , µ e = 0.22 cm 2 V -1 s -1 ) and the p-type FETs with tailored parameters based on low-density random network of SWCNTs (V th = -0.2 V, on/off > 10 5 , S S-th = 63 mV dec -1 , µ h = 0.04 cm 2 V -1 s -1 ) are integrated on the same substrate in order to obtain high-performance hybrid inverters. The inverters operate in the sub-1 V range (0.9 V) and have high gain (76 V/V), large maximum-equal-criteria noise margins (80%), and peak power consumption of 3 nW, in combination with low hysteresis (10 mV). © 2017 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Current rectification by self-assembled molecular quantum dots from first principles
NASA Astrophysics Data System (ADS)
Larade, Brian; Bratkovsky, Alexander
2003-03-01
We present results of first-principles calculations of the current rectification by self-assembled molecular quantum dots. Molecules of that kind should be synthesized with a central conjugated (narrow band-gap) part, and two peripheral saturated (wide band-gap) barrier groups of substantially different lengths L1 and L_2. The peripheral groups must end with chemical Â"anchorÂ" groups, enabling attachment of the molecule to the electrodes. In such molecules, if they are not longer than about 2-3 nm, the electron transport is likely to proceed by resonant tunneling through molecular orbitals (MO) centered on the conjugated part of the molecule (Â"quantum dotÂ") [1,2]. Generally, either LUMO (lowest unoccupied MO) or HOMO (highest occupied MO) will be most transparent to the tunneling electrons because of their different coupling to electrodes. We have studied (i) single benzene ring C6H6 [2] and (ii) naphthalene C10H8, separated from gold electrodes by alkane chains of different lengths with the use of the non-equilibrium Green's function method and self-consistent density-functional theory. The results show significant changes in electron density and potential distribution in the vicinity of molecule-electrode contact. In the case of a naphthalene quantum dot, separated from electrodes by asymmetric alkane groups (CH2)2 and (CH2)6, the I-V curve shows current rectification on the order of ˜ 10^2. [1] A.M. Bratkovsky and P.E. Kornilovitch, Phys. Rev. B (2002), to be published. [2] P. E. Kornilovitch, A.M. Bratkovsky, and R.S. Williams, Phys. Rev. B 66, 165436 (2002).
Total and Marginal Cost Analysis for a High School Based Bystander Intervention
ERIC Educational Resources Information Center
Bush, Joshua L.; Bush, Heather M.; Coker, Ann L.; Brancato, Candace J.; Clear, Emily R.; Recktenwald, Eileen A.
2018-01-01
Costs of providing the Green Dot bystander-based intervention, shown to be effective in the reduction of sexual violence among Kentucky high school students, were estimated based on data from a large cluster-randomized clinical trial. Rape Crisis Center Educators were trained to provide Green Dot curriculum to students. Implementing Green Dot in…
Jin, Ho; Won, Nayoun; Ahn, Boeun; Kwag, Jungheon; Heo, Kwang; Oh, Jin-Woo; Sun, Yintao; Cho, Soo Gyeong; Lee, Seung-Wuk; Kim, Sungjee
2013-07-11
We developed quantum dot-engineered M13 virus layer-by-layer hybrid composite films with incorporated fluorescence quenchers. TNT is designed to displace the quenchers and turn on the quantum dot fluorescence. TNT was detected at the sub ppb level with a high selectivity.
Scale Control and Quality Management of Printed Image Parameters
NASA Astrophysics Data System (ADS)
Novoselskaya, O. A.; Kolesnikov, V. L.; Solov'eva, T. V.; Nagornova, I. V.; Babluyk, E. B.; Trapeznikova, O. V.
2017-06-01
The article provides a comparison of the main valuation techniques for a regulated parameter of printability of the offset paper by current standards GOST 24356 and ISO 3783: 2006. The results of development and implementation of a complex test scale for management and control the quality of printed production are represented. The estimation scale is introduced. It includes normalized parameters of print optical density, print uniformity, picking out speed, the value of dot gain, print contrast with the added criteria of minimizing microtexts, a paper slip, resolution threshold and effusing ability of paper surface. The results of analysis allow directionally form surface properties of the substrate to facilitate achieving the required quality of the printed image parameters, i. e. optical density of a print at a predetermined level not less than 1.3, the print uniformity with minimal deviation of dot gain about the order of 10 per cents.
A Parameter-Free Semilocal Exchange Energy Functional for Two-Dimensional Quantum Systems.
Patra, Abhilash; Jana, Subrata; Samal, Prasanjit
2018-04-05
The method of constructing semilocal density functional for exchange in two dimensions using one of the premier approaches, i.e., density matrix expansion, is revisited, and an accurate functional is constructed. The form of the functional is quite simple and includes no adjustable semiempirical parameters. In it, the kinetic energy dependent momentum is used to compensate nonlocal effects of the system. The functional is then examined by considering the very well-known semiconductor quantum dot systems. And despite its very simple form, the results obtained for quantum dots containing a higher number of electrons agrees pretty well with that of the standard exact exchange theory. Some of the desired properties relevant for the two-dimensional exchange functional and the lower bound associated with it are also discussed. It is observed that the above parameter-free semilocal exchange functional satisfies most of the discussed conditions.
McDaniel, Hunter
2017-10-17
Common approaches to synthesizing alloyed quantum dots employ high-cost, air-sensitive phosphine complexes as the selenium precursor. Disclosed quantum dot synthesis embodiments avoid these hazardous and air-sensitive selenium precursors. Certain embodiments utilize a combination comprising a thiol and an amine that together reduce and complex the elemental selenium to form a highly reactive selenium precursor at room temperature. The same combination of thiol and amine acts as the reaction solvent, stabilizing ligand, and sulfur source in the synthesis of quantum dot cores. A non-injection approach may also be used. The optical properties of the quantum dots synthesized by this new approach can be finely tuned for a variety of applications by controlling size and/or composition of size and composition. Further, using the same approach, a shell can be grown around a quantum dot core that improves stability, luminescence efficiency, and may reduce toxicity.
Fast probe of local electronic states in nanostructures utilizing a single-lead quantum dot
Otsuka, Tomohiro; Amaha, Shinichi; Nakajima, Takashi; Delbecq, Matthieu R.; Yoneda, Jun; Takeda, Kenta; Sugawara, Retsu; Allison, Giles; Ludwig, Arne; Wieck, Andreas D.; Tarucha, Seigo
2015-01-01
Transport measurements are powerful tools to probe electronic properties of solid-state materials. To access properties of local electronic states in nanostructures, such as local density of states, electronic distribution and so on, micro-probes utilizing artificial nanostructures have been invented to perform measurements in addition to those with conventional macroscopic electronic reservoirs. Here we demonstrate a new kind of micro-probe: a fast single-lead quantum dot probe, which utilizes a quantum dot coupled only to the target structure through a tunneling barrier and fast charge readout by RF reflectometry. The probe can directly access the local electronic states with wide bandwidth. The probe can also access more electronic states, not just those around the Fermi level, and the operations are robust against bias voltages and temperatures. PMID:26416582
Study of interfaces in an Axisymmetric Supersonic Jet using Background Oriented Schlieren (BOS)
NASA Astrophysics Data System (ADS)
Echeverría, Carlos; Porta, David; Aguayo, Alejandro; Cardoso, Hiroki; Stern, Catalina
2014-11-01
We have used several techniques to study a small axisymmetric supersonic jet: Rayleigh scattering, Schlieren Toepler and PIV. Each technique gives different kind of information. In this paper, a BOS set-up is used to study the structure of the shock pattern. A shadowgraph of a dot matrix is obtained with and without a flow. The displacement field of the dots is related to changes in the index of refraction, which can be related, through the Gladstone-Dale equation, to changes in density. Previous results with this technique were not conclusive because of the relative size of the dots compared to the diameter of the nozzle. Measurements have been taken for three different exit speeds. We acknowledge support from UNAM through DGAPA PAPIIT IN117712 and the Graduate Program in Mechanical Engineering.
Photovoltaic conversion efficiency of InN/InxGa1-xN quantum dot intermediate band solar cells
NASA Astrophysics Data System (ADS)
Ben Afkir, N.; Feddi, E.; Dujardin, F.; Zazoui, M.; Meziane, J.
2018-04-01
The behavior of InN/InxGa1-xN spherical quantum dots solar cell is investigated, considering the internal electric field induced by the polarization of the junction. In order to determine the position of the intermediate band (IB), we present an efficient numerical technique based on difference finite method to solve the 3D time-independent Schrödinger's equation in spherical coordinates. The resultant n × n Hamiltonian matrix when considering n discrete points in spatial direction is diagonalized in order to calculate energy levels. Thus, the interband and intersubband transitions are determined, taking into consideration the effect of the internal electric field, size dots, interdot distances, and indium content on the energy levels, optical transition, photo-generated current density, open-circuit voltage and power conversion efficiency of the QD-IBSCs.
Photoluminescent carbon dots synthesized by microwave treatment for selective image of cancer cells.
Yang, Xudong; Yang, Xue; Li, Zhenyu; Li, Shouying; Han, Yexuan; Chen, Yang; Bu, Xinyuan; Su, Chunyan; Xu, Hong; Jiang, Yingnan; Lin, Quan
2015-10-15
In this work, a simple, low-cost and one-step microwave approach has been demonstrated for the synthesis of water-soluble carbon dots (C-dots). The average size of the resulting C-dots is about 4 nm. From the photoluminescence (PL) measurements, the C-dots exhibit excellent biocompatibility and intense PL with the high quantum yield (QY) at Ca. 25%. Significantly, the C-dots have excellent biocompatibility and the capacity to specifically target the cells overexpressing the folate receptor (FR). These exciting results indicate the as-prepared C-dots are promising biocompatible probe for cancer diagnosis and treatment. Copyright © 2015 Elsevier Inc. All rights reserved.
Tuneable light-emitting carbon-dot/polymer flexible films prepared through one-pot synthesis
NASA Astrophysics Data System (ADS)
Bhunia, Susanta Kumar; Nandi, Sukhendu; Shikler, Rafi; Jelinek, Raz
2016-02-01
Development of efficient, inexpensive, and environmentally-friendly light emitters, particularly devices that produce white light, have drawn intense interest due to diverse applications in the lighting industry, photonics, solar energy, and others. We present a simple strategy for the fabrication of flexible transparent films exhibiting tuneable light emission through one-pot synthesis of polymer matrixes with embedded carbon dots assembled in situ. Importantly, different luminescence colours were produced simply by preparing C-dot/polymer films using carbon precursors that yielded C-dots exhibiting distinct fluorescence emission profiles. Furthermore, mixtures of C-dot precursors could be also employed for fabricating films exhibiting different colours. In particular, we successfully produced films emitting white light with attractive properties (i.e. ``warm'' white light with a high colour rendering index) - a highly sought after goal in optical technologies.Development of efficient, inexpensive, and environmentally-friendly light emitters, particularly devices that produce white light, have drawn intense interest due to diverse applications in the lighting industry, photonics, solar energy, and others. We present a simple strategy for the fabrication of flexible transparent films exhibiting tuneable light emission through one-pot synthesis of polymer matrixes with embedded carbon dots assembled in situ. Importantly, different luminescence colours were produced simply by preparing C-dot/polymer films using carbon precursors that yielded C-dots exhibiting distinct fluorescence emission profiles. Furthermore, mixtures of C-dot precursors could be also employed for fabricating films exhibiting different colours. In particular, we successfully produced films emitting white light with attractive properties (i.e. ``warm'' white light with a high colour rendering index) - a highly sought after goal in optical technologies. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr08400h
Sol-Gel Chemistry for Carbon Dots.
Malfatti, Luca; Innocenzi, Plinio
2018-03-14
Carbon dots are an emerging class of carbon-based nanostructures produced by low-cost raw materials which exhibit a widely-tunable photoluminescence and a high quantum yield. The potential of these nanomaterials as a substitute of semiconductor quantum dots in optoelectronics and biomedicine is very high, however they need a customized chemistry to be integrated in host-guest systems or functionalized in core-shell structures. This review is focused on recent advances of the sol-gel chemistry applied to the C-dots technology. The surface modification, the fine tailoring of the chemical composition and the embedding into a complex nanostructured material are the main targets of combining sol-gel processing with C-dots chemistry. In addition, the synergistic effect of the sol-gel precursor combined with the C-dots contribute to modify the intrinsic chemo-physical properties of the dots, empowering the emission efficiency or enabling the tuning of the photoluminescence over a wide range of the visible spectrum. © 2018 The Chemical Society of Japan & Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Luminescent Quantum Dots as Ultrasensitive Biological Labels
NASA Astrophysics Data System (ADS)
Nie, Shuming
2000-03-01
Highly luminescent semiconductor quantum dots have been covalently coupled to biological molecules for use in ultrasensitive biological detection. This new class of luminescent labels is considerably brighter and more resistant againt photobleaching in comparison with organic dyes. Quantum dots labeled with the protein transferrin undergo receptor-mediated endocytosis (RME) in cultured HeLa cells, and those dots that were conjugated to immunomolecules recognize specific antibodies or antigens. In addition, we show that DNA functionalized quantum dots can be used to target specific genes by hybridization. We expect that quantum dot bioconjugates will have a broad range of biological applications, such as ligand-receptor interactions, real-time monitoring of molecular trafficking inside living cells, multicolor fluorescence in-situ hybridization (FISH), high-sensitivity detection in miniaturized devices (e.g., DNA chips), and fluorescent tagging of combinatorial chemical libraries. A potential clinical application is the use of quantum dots for ultrasensitive viral RNA detection, in which as low as 100 copies of hepatitis C and HIV viruses per ml blood should be detected.
NASA Astrophysics Data System (ADS)
Stopa, Michael
2005-03-01
We calculate the electronic structure of GaAs-AlGaAs two-dimensional electron gas (2DEG) devices, such as quantum dots and quantum point contacts (QPCs) in the presence of a tip of a scanning probe microscope at some distance above the surface. The calculation employs standard density functional theory with exchange and correlation treated in the local density approximation. The position and voltage on the tip are varied and the conditions for depletion of the 2DEG are shown to compare favorably to experiment [1]. We show that the size of the depletion region created (by a negative tip voltage) is unexpectedly small due to focusing of the potential lines by the higher dielectric. We study the interaction of the tip with an isolated quantum dot that contains one or two electrons. The raster pattern of the difference between single particle energies reveals that the tip distorts the shape of the confining potential and suggests that excited state properties, if they can be measured experimentally, can contribute to the resolution of spatial information. [1] M.A. Topinka, R.M. Westervelt, E.J. Heller, ``http://meso.deas.harvard.edu/papers/Topinka, PT 56 12 (2003)'' (Imaging Electron Flow), Physics Today 56, 12 (2003).
NASA Astrophysics Data System (ADS)
Moonrinta, Sasaluck; Kwon, Binhee; In, Insik; Kladsomboon, Sumana; Sajomsang, Warayuth; Paoprasert, Peerasak
2018-07-01
Carbon dots are fascinating nanomaterials given their straightforward synthesis, unique optical properties, sensing capabilities, and biocompatibility. In this work, biocompatible carbon dots were prepared from yogurt using a two-step pyrolysis/hydrothermal method. The dots were spherical in shape with an average size of 4.7 nm. They showed blue emission under UV illumination with a quantum yield of 1.5%. Their photoluminescence was stable over three months and in both strong buffer solutions and highly concentrated salt solutions. The optical absorption and photoluminescence properties of the dots were employed for vapor and metal ion sensing, respectively. For the first time, the carbon dots were integrated into an optical electronic nose, and used for the detection of formic acid vapor at room temperature. Sensing was based on monitoring the optical transmission through a carbon dot film upon exposure to vapor, and the results were confirmed by UV-visible spectroscopy. The carbon dot-integrated electronic nose was able to distinguish vapor from formic acid/water solutions at different concentrations, with a detection limit of 7.3% v/v. The sensitivity of the dots to metal ions was tested by measuring the photoluminescence emission intensity at different excitation wavelengths. Principal component analysis was used to differentiate between the ions. The results suggested that interactions between carbon dots and metals ions occurred at a range of binding sites. The biocompability of the dots was demonstrated to be excellent. The study identified carbon dots produced from yogurt as multipurpose fluorescent nanomaterials with potential sensing and biomedical applications.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Akimov, G.Y.; Prokhorov, I.Y.; Gorelik, I.V.
1995-09-01
The physicomechanical properties of ceramics obtained from plasmachemical and sol-gel powders of partially stabilized (3% Y{sub 2}O{sub 3}) zirconia (PSZ) and its compositions with 20% Al{sub 2}O{sub 3} by cold isostatic pressing (CIP) at a pressure of at most 2 GPa and sintering at 1300-1650{degrees}C are investigated. It is established that plasmachemical PSZ exhibits its best properties (K{sub 1c} = 7.8 MPa {center_dot} m{sup 1/2}, a strength of 650 MPa) only after complete disintegration at a CIP of 0.1 GPa and a sintering temperature of 1650{degrees}C, when the material is sintered to a density of 5.5 g/cm{sup 3}. After partialmore » stabilization and CIP at 0.1 GPa the plasmachemical composition of PSZ + 20% Al{sub 2}O{sub 3} is sintered at 1650{degrees}C to a density of 4.7 g/cm{sup 3}, but has K{sub 1c} = 8.5 MPa {center_dot} m{sup 1/2} and a strength of 700 MPa. The deagglomerated sol-gel powder exhibits properties at a level of K{sub 1c} = 12.4 MPa {center_dot} m{sup 1/2} and a strength of 950 MPa at a density above 6.0 g/cm{sup 3} after CIP at 0.3 GPa and sintering at 1450{degrees}C. The latter obviously has the best mechanical properties of all the investigated materials.« less
NASA Astrophysics Data System (ADS)
Liu, Hui; Zhao, Qingshan; Liu, Jingyan; Ma, Xiao; Rao, Yuan; Shao, Xiaodong; Li, Zhongtao; Wu, Wenting; Ning, Hui; Wu, Mingbo
2017-11-01
With rapid dissociative adsorption of oxygen, nitrogen-doped carbon nanomaterials have been demonstrated to be efficient alternative catalysts for oxygen reduction reaction (ORR) in fuel cells. Herein, we developed a mild hydrothermal strategy to construct nitrogen-doped carbon dots/graphene (NCDs-NG) composites towards ORR. Carbon dots (CDs) were derived from petroleum coke via acid oxidation while graphene oxide (GO) was obtained from graphite by modified Hummer's method. Graphene was employed as a conductive substrate to disperse CDs during hydrothermal reducing reaction while ammonia was utilized as N source to dope both graphene and CDs. The synergistic effects, i.e. CDs as pillars for graphene and catalytic sites for ORR, the high conductivity of graphene, the quick O2 adsorption on doped pyridinic nitrogen endow the NCDs-NG composites with enhanced ORR catalytic performance in alkaline electrolyte. The onset potential of -95 mV and kinetic current density of 12.7 mA cm-2 at -0.7 V (vs. Ag/AgCl) can be compared to those of the commercial 20 wt% Pt/C catalyst. The electron transfer number is about 3.9, revealing a four-electron pathway for ORR. The optimal NCDs-NG catalyst shows superior durability and methanol tolerance than 20 wt% Pt/C. This work demonstrates a feasible and effective strategy to prepare metal-free efficient ORR electrocatalysts for fuel cell applications.
Zn-Cu-In-Se Quantum Dot Solar Cells with a Certified Power Conversion Efficiency of 11.6%.
Du, Jun; Du, Zhonglin; Hu, Jin-Song; Pan, Zhenxiao; Shen, Qing; Sun, Jiankun; Long, Donghui; Dong, Hui; Sun, Litao; Zhong, Xinhua; Wan, Li-Jun
2016-03-30
The enhancement of power conversion efficiency (PCE) and the development of toxic Cd-, Pb-free quantum dots (QDs) are critical for the prosperity of QD-based solar cells. It is known that the properties (such as light harvesting range, band gap alignment, density of trap state defects, etc.) of QD light harvesters play a crucial effect on the photovoltaic performance of QD based solar cells. Herein, high quality ∼4 nm Cd-, Pb-free Zn-Cu-In-Se alloyed QDs with an absorption onset extending to ∼1000 nm were developed as effective light harvesters to construct quantum dot sensitized solar cells (QDSCs). Due to the small particle size, the developed QD sensitizer can be efficiently immobilized on TiO2 film electrode in less than 0.5 h. An average PCE of 11.66% and a certified PCE of 11.61% have been demonstrated in the QDSCs based on these Zn-Cu-In-Se QDs. The remarkably improved photovoltaic performance for Zn-Cu-In-Se QDSCs vs Cu-In-Se QDSCs (11.66% vs 9.54% in PCE) is mainly derived from the higher conduction band edge, which favors the photogenerated electron extraction and results in higher photocurrent, and the alloyed structure of Zn-Cu-In-Se QD light harvester, which benefits the suppression of charge recombination at photoanode/electrolyte interfaces and thus improves the photovoltage.
A programmable two-qubit quantum processor in silicon
NASA Astrophysics Data System (ADS)
Watson, T. F.; Philips, S. G. J.; Kawakami, E.; Ward, D. R.; Scarlino, P.; Veldhorst, M.; Savage, D. E.; Lagally, M. G.; Friesen, Mark; Coppersmith, S. N.; Eriksson, M. A.; Vandersypen, L. M. K.
2018-03-01
Now that it is possible to achieve measurement and control fidelities for individual quantum bits (qubits) above the threshold for fault tolerance, attention is moving towards the difficult task of scaling up the number of physical qubits to the large numbers that are needed for fault-tolerant quantum computing. In this context, quantum-dot-based spin qubits could have substantial advantages over other types of qubit owing to their potential for all-electrical operation and ability to be integrated at high density onto an industrial platform. Initialization, readout and single- and two-qubit gates have been demonstrated in various quantum-dot-based qubit representations. However, as seen with small-scale demonstrations of quantum computers using other types of qubit, combining these elements leads to challenges related to qubit crosstalk, state leakage, calibration and control hardware. Here we overcome these challenges by using carefully designed control techniques to demonstrate a programmable two-qubit quantum processor in a silicon device that can perform the Deutsch–Josza algorithm and the Grover search algorithm—canonical examples of quantum algorithms that outperform their classical analogues. We characterize the entanglement in our processor by using quantum-state tomography of Bell states, measuring state fidelities of 85–89 per cent and concurrences of 73–82 per cent. These results pave the way for larger-scale quantum computers that use spins confined to quantum dots.
A programmable two-qubit quantum processor in silicon.
Watson, T F; Philips, S G J; Kawakami, E; Ward, D R; Scarlino, P; Veldhorst, M; Savage, D E; Lagally, M G; Friesen, Mark; Coppersmith, S N; Eriksson, M A; Vandersypen, L M K
2018-03-29
Now that it is possible to achieve measurement and control fidelities for individual quantum bits (qubits) above the threshold for fault tolerance, attention is moving towards the difficult task of scaling up the number of physical qubits to the large numbers that are needed for fault-tolerant quantum computing. In this context, quantum-dot-based spin qubits could have substantial advantages over other types of qubit owing to their potential for all-electrical operation and ability to be integrated at high density onto an industrial platform. Initialization, readout and single- and two-qubit gates have been demonstrated in various quantum-dot-based qubit representations. However, as seen with small-scale demonstrations of quantum computers using other types of qubit, combining these elements leads to challenges related to qubit crosstalk, state leakage, calibration and control hardware. Here we overcome these challenges by using carefully designed control techniques to demonstrate a programmable two-qubit quantum processor in a silicon device that can perform the Deutsch-Josza algorithm and the Grover search algorithm-canonical examples of quantum algorithms that outperform their classical analogues. We characterize the entanglement in our processor by using quantum-state tomography of Bell states, measuring state fidelities of 85-89 per cent and concurrences of 73-82 per cent. These results pave the way for larger-scale quantum computers that use spins confined to quantum dots.
Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell.
Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin
2018-02-23
An innovative solar cell based on a nanowire/quantum dot hybrid nanostructure array is designed and analyzed. By growing multilayer InAs quantum dots on the sidewalls of GaAs nanowires, not only the absorption spectrum of GaAs nanowires is extended by quantum dots but also the light absorption of quantum dots is dramatically enhanced due to the light-trapping effect of the nanowire array. By incorporating five layers of InAs quantum dots into a 500-nm high-GaAs nanowire array, the power conversion efficiency enhancement induced by the quantum dots is six times higher than the power conversion efficiency enhancement in thin-film solar cells which contain the same amount of quantum dots, indicating that the nanowire array structure can benefit the photovoltaic performance of quantum dot solar cells.
Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell
NASA Astrophysics Data System (ADS)
Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin
2018-02-01
An innovative solar cell based on a nanowire/quantum dot hybrid nanostructure array is designed and analyzed. By growing multilayer InAs quantum dots on the sidewalls of GaAs nanowires, not only the absorption spectrum of GaAs nanowires is extended by quantum dots but also the light absorption of quantum dots is dramatically enhanced due to the light-trapping effect of the nanowire array. By incorporating five layers of InAs quantum dots into a 500-nm high-GaAs nanowire array, the power conversion efficiency enhancement induced by the quantum dots is six times higher than the power conversion efficiency enhancement in thin-film solar cells which contain the same amount of quantum dots, indicating that the nanowire array structure can benefit the photovoltaic performance of quantum dot solar cells.
Cho, Kyung-Sang; Heo, Keun; Baik, Chan-Wook; Choi, Jun Young; Jeong, Heejeong; Hwang, Sungwoo; Lee, Sang Yeol
2017-10-10
We report color-selective photodetection from intermediate, monolayered, quantum dots buried in between amorphous-oxide semiconductors. The proposed active channel in phototransistors is a hybrid configuration of oxide-quantum dot-oxide layers, where the gate-tunable electrical property of silicon-doped, indium-zinc-oxide layers is incorporated with the color-selective properties of quantum dots. A remarkably high detectivity (8.1 × 10 13 Jones) is obtained, along with three major findings: fast charge separation in monolayered quantum dots; efficient charge transport through high-mobility oxide layers (20 cm 2 V -1 s -1 ); and gate-tunable drain-current modulation. Particularly, the fast charge separation rate of 3.3 ns -1 measured with time-resolved photoluminescence is attributed to the intermediate quantum dots buried in oxide layers. These results facilitate the realization of efficient color-selective detection exhibiting a photoconductive gain of 10 7 , obtained using a room-temperature deposition of oxide layers and a solution process of quantum dots. This work offers promising opportunities in emerging applications for color detection with sensitivity, transparency, and flexibility.The development of highly sensitive photodetectors is important for image sensing and optical communication applications. Cho et al., report ultra-sensitive photodetectors based on monolayered quantum dots buried in between amorphous-oxide semiconductors and demonstrate color-detecting logic gates.
Transparent Ultra-High-Loading Quantum Dot/Polymer Nanocomposite Monolith for Gamma Scintillation.
Liu, Chao; Li, Zhou; Hajagos, Tibor Jacob; Kishpaugh, David; Chen, Dustin Yuan; Pei, Qibing
2017-06-27
Spectroscopic gamma-photon detection has widespread applications for research, defense, and medical purposes. However, current commercial detectors are either prohibitively expensive for wide deployment or incapable of producing the characteristic gamma photopeak. Here we report the synthesis of transparent, ultra-high-loading (up to 60 wt %) Cd x Zn 1-x S/ZnS core/shell quantum dot/polymer nanocomposite monoliths for gamma scintillation by in situ copolymerization of the partially methacrylate-functionalized quantum dots in a monomer solution. The efficient Förster resonance energy transfer of the high-atomic-number quantum dots to lower-band-gap organic dyes enables the extraction of quantum-dot-borne excitons for photon production, resolving the problem of severe light yield deterioration found in previous nanoparticle-loaded scintillators. As a result, the nanocomposite scintillator exhibited simultaneous improvements in both light yield (visible photons produced per MeV of gamma-photon energy) and gamma attenuation. With these enhancements, a 662 keV Cs-137 gamma photopeak with 9.8% resolution has been detected using a 60 wt % quantum-dot nanocomposite scintillator, demonstrating the potential of such a nanocomposite system in the development of high-performance low-cost spectroscopic gamma detectors.
Ti Porous Film-Supported NiCo₂S₄ Nanotubes Counter Electrode for Quantum-Dot-Sensitized Solar Cells.
Deng, Jianping; Wang, Minqiang; Song, Xiaohui; Yang, Zhi; Yuan, Zhaolin
2018-04-17
In this paper, a novel Ti porous film-supported NiCo₂S₄ nanotube was fabricated by the acid etching and two-step hydrothermal method and then used as a counter electrode in a CdS/CdSe quantum-dot-sensitized solar cell. Measurements of the cyclic voltammetry, Tafel polarization curves, and electrochemical impedance spectroscopy of the symmetric cells revealed that compared with the conventional FTO (fluorine doped tin oxide)/Pt counter electrode, Ti porous film-supported NiCo₂S₄ nanotubes counter electrode exhibited greater electrocatalytic activity toward polysulfide electrolyte and lower charge-transfer resistance at the interface between electrolyte and counter electrode, which remarkably improved the fill factor, short-circuit current density, and power conversion efficiency of the quantum-dot-sensitized solar cell. Under illumination of one sun (100 mW/cm²), the quantum-dot-sensitized solar cell based on Ti porous film-supported NiCo₂S₄ nanotubes counter electrode achieved a power conversion efficiency of 3.14%, which is superior to the cell based on FTO/Pt counter electrode (1.3%).
NASA Astrophysics Data System (ADS)
Zhang, Chenguang; Liu, Shaowen; Liu, Xingwei; Deng, Fei; Xiong, Yan; Tsai, Fang-Chang
2018-03-01
A photoelectric conversion efficiency (PCE) of 4.9% was obtained under 100 mW cm-2 illumination by quantum-dot-sensitized solar cells (QDSSCs) using a CdS/Mn : CdSe sensitizer. CdS quantum dots (QDs) were deposited on a TiO2 mesoporous oxide film by successive ionic layer absorption and reaction. Mn2+ doping into CdSe QDs is an innovative and simple method-chemical bath co-deposition, that is, mixing the Mn ion source with CdSe precursor solution for Mn : CdSe QD deposition. Compared with the CdS/CdSe sensitizer without Mn2+ incorporation, the PCE was increased from 3.4% to 4.9%. The effects of Mn2+ doping on the chemical, physical and photovoltaic properties of the QDSSCs were investigated by energy dispersive spectrometry, absorption spectroscopy, photocurrent density-voltage characteristics and electrochemical impedance spectroscopy. Mn-doped CdSe QDs in QDSSCs can obtain superior light absorption, faster electron transport and slower charge recombination than CdSe QDs.
Zhang, Chenguang; Liu, Shaowen; Liu, Xingwei; Deng, Fei; Xiong, Yan; Tsai, Fang-Chang
2018-03-01
A photoelectric conversion efficiency (PCE) of 4.9% was obtained under 100 mW cm -2 illumination by quantum-dot-sensitized solar cells (QDSSCs) using a CdS/Mn : CdSe sensitizer. CdS quantum dots (QDs) were deposited on a TiO 2 mesoporous oxide film by successive ionic layer absorption and reaction. Mn 2+ doping into CdSe QDs is an innovative and simple method-chemical bath co-deposition, that is, mixing the Mn ion source with CdSe precursor solution for Mn : CdSe QD deposition. Compared with the CdS/CdSe sensitizer without Mn 2+ incorporation, the PCE was increased from 3.4% to 4.9%. The effects of Mn 2+ doping on the chemical, physical and photovoltaic properties of the QDSSCs were investigated by energy dispersive spectrometry, absorption spectroscopy, photocurrent density-voltage characteristics and electrochemical impedance spectroscopy. Mn-doped CdSe QDs in QDSSCs can obtain superior light absorption, faster electron transport and slower charge recombination than CdSe QDs.
NASA Astrophysics Data System (ADS)
Hartle, Rainer; Cohen, Guy; Reichman, David R.; Millis, Andrew J.
2014-03-01
A recently developed hierarchical quantum master equation approach is used to investigate nonequilibrium electron transport through an interacting double quantum dot system in the regime where the inter-dot coupling is weaker than the coupling to the electrodes. The corresponding eigenstates provide tunneling paths that may interfere constructively or destructively, depending on the energy of the tunneling electrons. Electron-electron interactions are shown to quench these interference effects in bias-voltage dependent ways, leading, in particular, to negative differential resistance, population inversion and an enhanced broadening of resonances in the respective transport characteristics. Relaxation times are found to be very long, and to be correlated with very slow dynamics of the inter-dot coherences (off diagonal density matrix elements). The ability of the hierarchical quantum master equation approach to access very long time scales is crucial for the study of this physics. This work is supported by the National Science Foundation (NSF DMR-1006282 and NSF CHE-1213247), the Yad Hanadiv-Rothschild Foundation (via a Rothschild Fellowship for GC) and the Alexander von Humboldt Foundation (via a Feodor Lynen fellowship for RH).
A real-time spectrum acquisition system design based on quantum dots-quantum well detector
NASA Astrophysics Data System (ADS)
Zhang, S. H.; Guo, F. M.
2016-01-01
In this paper, we studied the structure characteristics of quantum dots-quantum well photodetector with response wavelength range from 400 nm to 1000 nm. It has the characteristics of high sensitivity, low dark current and the high conductance gain. According to the properties of the quantum dots-quantum well photodetectors, we designed a new type of capacitive transimpedence amplifier (CTIA) readout circuit structure with the advantages of adjustable gain, wide bandwidth and high driving ability. We have implemented the chip packaging between CTIA-CDS structure readout circuit and quantum dots detector and tested the readout response characteristics. According to the timing signals requirements of our readout circuit, we designed a real-time spectral data acquisition system based on FPGA and ARM. Parallel processing mode of programmable devices makes the system has high sensitivity and high transmission rate. In addition, we realized blind pixel compensation and smoothing filter algorithm processing to the real time spectrum data by using C++. Through the fluorescence spectrum measurement of carbon quantum dots and the signal acquisition system and computer software system to realize the collection of the spectrum signal processing and analysis, we verified the excellent characteristics of detector. It meets the design requirements of quantum dot spectrum acquisition system with the characteristics of short integration time, real-time and portability.
NASA Astrophysics Data System (ADS)
Ellingboe, Bert; Sirse, Nishant; Moloney, Rachel; McCarthy, John
2015-09-01
Bounded whistler wave, called ``helicon wave,'' is known to produce high-density plasmas and has been exploited as a high density plasma source for many applications, including electric propulsion for spacecraft. In a helicon plasma source, an antenna wrapped around the magnetized plasma column launches a low frequency wave, ωce/2 >ωhelicon >ωce/100, in the plasma which is responsible for maintaining high density plasma. Several antenna designs have been proposed in order to match efficiently the wave modes. In our experiment, helicon wave mode is observed using an m = 0 antenna. A floating B dot probe, compensated to the capacitively coupled E field, is employed to measure axial-wave-field-profiles (z, r, and θ components) in the plasma at multiple radial positions as a function of rf power and pressure. The Bθ component of the rf-field is observed to be unaffected as the wave propagates in the axial direction. Power coupling between the antenna and the plasma column is identified and agrees with the E, H, and wave coupling regimes previously seen in M =1 antenna systems. That is, the Bz component of the rf-field is observed at low plasma density as the Bz component from the antenna penetrates the plasma. The Bz component becomes very small at medium density due to shielding at the centre of the plasma column; however, with increasing density, a sudden ``jump'' occurs in the Bz component above which a standing wave under the antenna with a propagating wave away from the antenna are observed.
Omotayo, A; Cygler, J; Sawakuchi, G
2012-06-01
To investigate the effect of bleaching wavelengths on the regeneration of optically stimulated luminescence (OSL) signals in Al 2 O 3 :C nanoDot dosimeters pre-exposed to high doses. Regeneration is the increase in the OSL signal during storage of a bleached nanoDot that was previously pre-exposed to a high dose. This phenomenon affects the accuracy of a calibration protocol proposed by Jursinic 2010 (Med. Phys. 37:102) in which pre-exposure of nanoDots to a high-dose was used to minimize changes in the sensitivity of the detector as a function of accumulated dose. Al 2 O 3 :C OSLDs of the type nanoDot were used throughout this study. Readout was performed using the microStar reader. Bleaching of the OSLDs was performed with four 26 W fluorescent light bulbs in two modes: (i) directly under the lamps; and (ii) with the aid of a long-pass optical filter placed over the nanoDots, partially blocking wavelengths below 495 nm. Eighteen nanoDots were pre-exposed to 1 kGy dose. Then the pre-exposed nanoDots were bleached in two sets of 9 to very low residual OSL signals using bleaching modes (i) and (ii) for 12 h and 45 h, respectively. The nanoDots were then stored in dark and readout after various time intervals to monitor the regeneration of the OSL signal. We fitted the regeneration of the OSL signal using a saturation function and obtained rise-time values of 563 h and 630 h, for bleaching modes (i) and (ii), respectively. At the saturation level, the equivalent doses were about 1.18 Gy and 0.38 Gy for modes (i) and (ii), respectively. The regeneration rates of nanoDot OSLDs pre-exposed to high doses depend on the bleaching light wavelength used to reset the detectors. A bleaching source that has a low component of wavelengths below 495 nm can minimize the regeneration of the OSL signal. Natural Sciences and Engineering Research Council of Canada. © 2012 American Association of Physicists in Medicine.
NASA Astrophysics Data System (ADS)
Muralee Gopi, Chandu V. V.; Ravi, Seenu; Rao, S. Srinivasa; Eswar Reddy, Araveeti; Kim, Hee-Je
2017-04-01
Carbon nanotubes (CNT) and metal sulfides have attracted considerable attention owing to their outstanding properties and multiple application areas, such as electrochemical energy conversion and energy storage. Here we describes a cost-effective and facile solution approach to the preparation of metal sulfides (PbS, CuS, CoS, and NiS) grown directly on CNTs, such as CNT/PbS, CNT/CuS, CNT/CoS, and CNT/NiS flexible electrodes for quantum dot-sensitized solar cells (QDSSCs) and supercapacitors (SCs). X-ray photoelectron spectroscopy, X-ray diffraction, and transmission electron microscopy confirmed that the CNT network was covered with high-purity metal sulfide compounds. QDSSCs equipped with the CNT/NiS counter electrode (CE) showed an impressive energy conversion efficiency (η) of 6.41% and remarkable stability. Interestingly, the assembled symmetric CNT/NiS-based polysulfide SC device exhibited a maximal energy density of 35.39 W h kg-1 and superior cycling durability with 98.39% retention after 1,000 cycles compared to the other CNT/metal-sulfides. The elevated performance of the composites was attributed mainly to the good conductivity, high surface area with mesoporous structures and stability of the CNTs and the high electrocatalytic activity of the metal sulfides. Overall, the designed composite CNT/metal-sulfide electrodes offer an important guideline for the development of next level energy conversion and energy storage devices.
Muralee Gopi, Chandu V V; Ravi, Seenu; Rao, S Srinivasa; Eswar Reddy, Araveeti; Kim, Hee-Je
2017-04-19
Carbon nanotubes (CNT) and metal sulfides have attracted considerable attention owing to their outstanding properties and multiple application areas, such as electrochemical energy conversion and energy storage. Here we describes a cost-effective and facile solution approach to the preparation of metal sulfides (PbS, CuS, CoS, and NiS) grown directly on CNTs, such as CNT/PbS, CNT/CuS, CNT/CoS, and CNT/NiS flexible electrodes for quantum dot-sensitized solar cells (QDSSCs) and supercapacitors (SCs). X-ray photoelectron spectroscopy, X-ray diffraction, and transmission electron microscopy confirmed that the CNT network was covered with high-purity metal sulfide compounds. QDSSCs equipped with the CNT/NiS counter electrode (CE) showed an impressive energy conversion efficiency (η) of 6.41% and remarkable stability. Interestingly, the assembled symmetric CNT/NiS-based polysulfide SC device exhibited a maximal energy density of 35.39 W h kg -1 and superior cycling durability with 98.39% retention after 1,000 cycles compared to the other CNT/metal-sulfides. The elevated performance of the composites was attributed mainly to the good conductivity, high surface area with mesoporous structures and stability of the CNTs and the high electrocatalytic activity of the metal sulfides. Overall, the designed composite CNT/metal-sulfide electrodes offer an important guideline for the development of next level energy conversion and energy storage devices.
Liu, Feng; Zhang, Yaohong; Ding, Chao; Kobayashi, Syuusuke; Izuishi, Takuya; Nakazawa, Naoki; Toyoda, Taro; Ohta, Tsuyoshi; Hayase, Shuzi; Minemoto, Takashi; Yoshino, Kenji; Dai, Songyuan; Shen, Qing
2017-10-24
Perovskite quantum dots (QDs) as a new type of colloidal nanocrystals have gained significant attention for both fundamental research and commercial applications owing to their appealing optoelectronic properties and excellent chemical processability. For their wide range of potential applications, synthesizing colloidal QDs with high crystal quality is of crucial importance. However, like most common QD systems such as CdSe and PbS, those reported perovskite QDs still suffer from a certain density of trapping defects, giving rise to detrimental nonradiative recombination centers and thus quenching luminescence. In this paper, we show that a high room-temperature photoluminescence quantum yield of up to 100% can be obtained in CsPbI 3 perovskite QDs, signifying the achievement of almost complete elimination of the trapping defects. This is realized with our improved synthetic protocol that involves introducing organolead compound trioctylphosphine-PbI 2 (TOP-PbI 2 ) as the reactive precursor, which also leads to a significantly improved stability for the resulting CsPbI 3 QD solutions. Ultrafast kinetic analysis with time-resolved transient absorption spectroscopy evidence the negligible electron or hole-trapping pathways in our QDs, which explains such a high quantum efficiency. We expect the successful synthesis of the "ideal" perovskite QDs will exert profound influence on their applications to both QD-based light-harvesting and -emitting devices.
NASA Astrophysics Data System (ADS)
Mondal, Sucheta; Barman, Saswati; Choudhury, Samiran; Otani, Yoshichika; Barman, Anjan
2018-07-01
Ultrafast spin dynamics in ferromagnetic nanodot arrays with dot diameter 100 nm and thickness 20 nm arranged in honeycomb and octagonal lattice symmetries are studied to explore the tunability of the collective magnetization dynamics. By varying the inter-dot separation between 30 nm and 300 nm drastic variation in the precessional dynamics from strongly collective to completely isolated regime has been observed by using all-optical time-resolved magneto-optical Kerr microscope. Micromagnetic simulation is exploited to gain insights about the resonant mode profiles and magnetic coupling between the nanodots. A significant spectral and spatial variation in the resonant mode with increasing dipolar interaction is demonstrated with increasing inter-dot separation. The spins driven by effective field inside single nanodots are prone to precess independently, generating two self-standing centre and edge modes in the array that are influenced by the relative orientation between the inter-dot coupling direction and bias magnetic field. The anisotropic behavior of dipolar field is rigorously investigated here. Splitting of the centre mode in case of octagonal lattice is experimentally observed here as a consequence of the anisotropic dipolar field between the nanodot pairs coupled horizontally and vertically, which is not found in the honeycomb lattice. In addition, proper understanding of the modification of dynamic mode profile by neighboring dipolar interaction built up here, is imperative for further control of the dynamic dipolar interaction and the corresponding collective excitation in magnonic crystals. The usage of nanodot lattices with complex basis structures can be advantageous for the designing of high density magnetic recording media, spin-wave filter and logic devices.
NASA Astrophysics Data System (ADS)
Kim, Jungho
2014-02-01
The effect of additional optical pumping injection into the ground-state ensemble on the ultrafast gain and the phase recovery dynamics of electrically-driven quantum-dot semiconductor optical amplifiers is numerically investigated by solving 1088 coupled rate equations. The ultrafast gain and the phase recovery responses are calculated with respect to the additional optical pumping power. Increasing the additional optical pumping power can significantly accelerate the ultrafast phase recovery, which cannot be done by increasing the injection current density.
Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots.
Huber, Daniel; Reindl, Marcus; Huo, Yongheng; Huang, Huiying; Wildmann, Johannes S; Schmidt, Oliver G; Rastelli, Armando; Trotta, Rinaldo
2017-05-26
The development of scalable sources of non-classical light is fundamental to unlocking the technological potential of quantum photonics. Semiconductor quantum dots are emerging as near-optimal sources of indistinguishable single photons. However, their performance as sources of entangled-photon pairs are still modest compared to parametric down converters. Photons emitted from conventional Stranski-Krastanov InGaAs quantum dots have shown non-optimal levels of entanglement and indistinguishability. For quantum networks, both criteria must be met simultaneously. Here, we show that this is possible with a system that has received limited attention so far: GaAs quantum dots. They can emit triggered polarization-entangled photons with high purity (g (2) (0) = 0.002±0.002), high indistinguishability (0.93±0.07 for 2 ns pulse separation) and high entanglement fidelity (0.94±0.01). Our results show that GaAs might be the material of choice for quantum-dot entanglement sources in future quantum technologies.
Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots
Huber, Daniel; Reindl, Marcus; Huo, Yongheng; Huang, Huiying; Wildmann, Johannes S.; Schmidt, Oliver G.; Rastelli, Armando; Trotta, Rinaldo
2017-01-01
The development of scalable sources of non-classical light is fundamental to unlocking the technological potential of quantum photonics. Semiconductor quantum dots are emerging as near-optimal sources of indistinguishable single photons. However, their performance as sources of entangled-photon pairs are still modest compared to parametric down converters. Photons emitted from conventional Stranski–Krastanov InGaAs quantum dots have shown non-optimal levels of entanglement and indistinguishability. For quantum networks, both criteria must be met simultaneously. Here, we show that this is possible with a system that has received limited attention so far: GaAs quantum dots. They can emit triggered polarization-entangled photons with high purity (g(2)(0) = 0.002±0.002), high indistinguishability (0.93±0.07 for 2 ns pulse separation) and high entanglement fidelity (0.94±0.01). Our results show that GaAs might be the material of choice for quantum-dot entanglement sources in future quantum technologies. PMID:28548081
Long, Run; Prezhdo, Oleg V
2015-07-08
Hybrid organic/inorganic polymer/quantum dot (QD) solar cells are an attractive alternative to the traditional cells. The original, simple models postulate that one-dimensional polymers have continuous energy levels, while zero-dimensional QDs exhibit atom-like electronic structure. A realistic, atomistic viewpoint provides an alternative description. Electronic states in polymers are molecule-like: finite in size and discrete in energy. QDs are composed of many atoms and have high, bulk-like densities of states. We employ ab initio time-domain simulation to model the experimentally observed ultrafast photoinduced dynamics in a QD/polymer hybrid and show that an atomistic description is essential for understanding the time-resolved experimental data. Both electron and hole transfers across the interface exhibit subpicosecond time scales. The interfacial processes are fast due to strong electronic donor-acceptor, as evidenced by the densities of the photoexcited states which are delocalized between the donor and the acceptor. The nonadiabatic charge-phonon coupling is also strong, especially in the polymer, resulting in rapid energy losses. The electron transfer from the polymer is notably faster than the hole transfer from the QD, due to a significantly higher density of acceptor states. The stronger molecule-like electronic and charge-phonon coupling in the polymer rationalizes why the electron-hole recombination inside the polymer is several orders of magnitude faster than in the QD. As a result, experiments exhibit multiple transfer times for the long-lived hole inside the QD, ranging from subpicoseconds to nanoseconds. In contrast, transfer of the short-lived electron inside the polymer does not occur beyond the first picosecond. The energy lost by the hole on its transit into the polymer is accommodated by polymer's high-frequency vibrations. The energy lost by the electron injected into the QD is accommodated primarily by much lower-frequency collective and QD modes. The electron dynamics is exponential, whereas evolution of the injected hole through the low density manifold of states of the polymer is highly nonexponential. The time scale of the electron-hole recombination at the interface is intermediate between those in pristine polymer and QD and is closer to that in the polymer. The detailed atomistic insights into the photoinduced charge and energy dynamics at the polymer/QD interface provide valuable guidelines for optimization of solar light harvesting and photovoltaic efficiency in modern nanoscale materials.
Yang, Yuzhao; Lin, Xiaofeng; Li, Wenlang; Ou, Jiemei; Yuan, Zhongke; Xie, Fangyan; Hong, Wei; Yu, Dingshan; Ma, Yuguang; Chi, Zhenguo; Chen, Xudong
2017-05-03
Cathode interlayers (CILs) with low-cost, low-toxicity, and excellent cathode modification ability are necessary for the large-scale industrialization of polymer solar cells (PSCs). In this contribution, we demonstrated one-pot synthesized carbon quantum dots (C-dots) with high production to serve as efficient CIL for inverted PSCs. The C-dots were synthesized by a facile, economical microwave pyrolysis in a household microwave oven within 7 min. Ultraviolet photoelectron spectroscopy (UPS) studies showed that the C-dots possessed the ability to form a dipole at the interface, resulting in the decrease of the work function (WF) of cathode. External quantum efficiency (EQE) measurements and 2D excitation-emission topographical maps revealed that the C-dots down-shifted the high energy near-ultraviolet light to low energy visible light to generate more photocurrent. Remarkably improvement of power conversion efficiency (PCE) was attained by incorporation of C-dots as CIL. The PCE was boosted up from 4.14% to 8.13% with C-dots as CIL, which is one of the best efficiency for i-PSCs used carbon based materials as interlayers. These results demonstrated that C-dots can be a potential candidate for future low cost and large area PSCs producing.
Facilitated preparation of bioconjugatable zwitterionic quantum dots using dual-lipid encapsulation.
Shrake, Robert; Demillo, Violeta G; Ahmadiantehrani, Mojtaba; Zhu, Xiaoshan; Publicover, Nelson G; Hunter, Kenneth W
2015-01-01
Zwitterionic quantum dots prepared through incorporated zwitterionic ligands on quantum dot surfaces, are being paid significant attention in biomedical applications because of their excellent colloidal stability across a wide pH and ionic strength range, antifouling surface, good biocompatibility, etc. In this work, we report a dual-lipid encapsulation approach to prepare bioconjugatable zwitterionic quantum dots using amidosulfobetaine-16 lipids, dipalmitoyl-sn-glycero-3-phosphoethanolamine lipids with functional head groups, and CuInS2/ZnS quantum dots in a tetrahydrofuran/methanol/water solvent system with sonication. Amidosulfobetaine-16 is a zwitterionic lipid and dipalmitoyl-sn-glycero-3-phosphoethanolamine, with its functional head, provides bioconjugation capability. Under sonication, tetrahydrofuran/methanol containing amidosulfobetaine-16, dipalmitoyl-sn-glycero-3-phosphoethanolamine, and hydrophobic quantum dots are dispersed in water to form droplets. Highly water-soluble tetrahydrofuran/methanol in droplets is further displaced by water, which induces the lipid self-assembling on hydrophobic surface of quantum dots and thus forms water soluble zwitterionic quantum dots. The prepared zwitterionic quantum dots maintain colloidal stability in aqueous solutions with high salinity and over a wide pH range. They are also able to be conjugated with biomolecules for bioassay with minimal nonspecific binding. Copyright © 2014 Elsevier Inc. All rights reserved.
Synthesis of Cd-free InP/ZnS Quantum Dots Suitable for Biomedical Applications.
Ellis, Matthew A; Grandinetti, Giovanna; Fichter, Katye M; Fichter, Kathryn M
2016-02-06
Fluorescent nanocrystals, specifically quantum dots, have been a useful tool for many biomedical applications. For successful use in biological systems, quantum dots should be highly fluorescent and small/monodisperse in size. While commonly used cadmium-based quantum dots possess these qualities, they are potentially toxic due to the possible release of Cd(2+) ions through nanoparticle degradation. Indium-based quantum dots, specifically InP/ZnS, have recently been explored as a viable alternative to cadmium-based quantum dots due to their relatively similar fluorescence characteristics and size. The synthesis presented here uses standard hot-injection techniques for effective nanoparticle growth; however, nanoparticle properties such as size, emission wavelength, and emission intensity can drastically change due to small changes in the reaction conditions. Therefore, reaction conditions such temperature, reaction duration, and precursor concentration should be maintained precisely to yield reproducible products. Because quantum dots are not inherently soluble in aqueous solutions, they must also undergo surface modification to impart solubility in water. In this protocol, an amphiphilic polymer is used to interact with both hydrophobic ligands on the quantum dot surface and bulk solvent water molecules. Here, a detailed protocol is provided for the synthesis of highly fluorescent InP/ZnS quantum dots that are suitable for use in biomedical applications.
Synthesis of Cd-free InP/ZnS Quantum Dots Suitable for Biomedical Applications
Ellis, Matthew A.; Grandinetti, Giovanna; Fichter, Katye M.
2016-01-01
Fluorescent nanocrystals, specifically quantum dots, have been a useful tool for many biomedical applications. For successful use in biological systems, quantum dots should be highly fluorescent and small/monodisperse in size. While commonly used cadmium-based quantum dots possess these qualities, they are potentially toxic due to the possible release of Cd2+ ions through nanoparticle degradation. Indium-based quantum dots, specifically InP/ZnS, have recently been explored as a viable alternative to cadmium-based quantum dots due to their relatively similar fluorescence characteristics and size. The synthesis presented here uses standard hot-injection techniques for effective nanoparticle growth; however, nanoparticle properties such as size, emission wavelength, and emission intensity can drastically change due to small changes in the reaction conditions. Therefore, reaction conditions such temperature, reaction duration, and precursor concentration should be maintained precisely to yield reproducible products. Because quantum dots are not inherently soluble in aqueous solutions, they must also undergo surface modification to impart solubility in water. In this protocol, an amphiphilic polymer is used to interact with both hydrophobic ligands on the quantum dot surface and bulk solvent water molecules. Here, a detailed protocol is provided for the synthesis of highly fluorescent InP/ZnS quantum dots that are suitable for use in biomedical applications. PMID:26891282
Creation of Frustrated Systems by d-dot Array
NASA Astrophysics Data System (ADS)
Masahiko, Machida
2004-03-01
When a square shape dot of High-Tc superconductor is embedded in s-wave superconducting matrix, half quantized vortices are spontaneously generated at the corners of the dot. This feature gives the magnetic interactions between neighboring dots in array systems composed of sevaral dots of High-Tc superconductor and allows us to make magnetic interaction systems. We propose that we can create interesting frustrated systems like the spin-ice by setting the dots in various manners. In order to demonstrate which types of frustrated systems are possible, we perform numerical simulations for the time-dependent Ginzburg-Landau equation describing dynamics of the superconducting order parameters with d-wave and s-wave symmetries. The simulations reveal that the proposed system has two parameters originated from the magnetic interaction between emerged half vortices. We tune the parameters and show various patterns of half vortices from the Ising to the ice model.
Materials Science Research Rack Onboard the International Space Station
NASA Technical Reports Server (NTRS)
Reagan, Shawn E.; Lehman, John R.; Frazier, Natalie C.
2014-01-01
The Materials Science Research Rack (MSRR) is a highly automated facility developed in a joint venture/partnership between NASA and ESA center dot Allows for the study of a variety of materials including metals, ceramics, semiconductor crystals, and glasses onboard the International Space Station (ISS) center dot Multi-user facility for high temperature materials science research center dot Launched on STS-128 in August 2009, and is currently installed in the U.S. Destiny Laboratory Module ?Research goals center dot Provide means of studying materials processing in space to develop a better understanding of the chemical and physical mechanisms involved center dot Benefit materials science research via the microgravity environment of space where the researcher can better isolate the effects of gravity during solidification on the properties of materials center dot Use the knowledge gained from experiments to make reliable predictions about conditions required on Earth to achieve improved materials
Malic Acid Carbon Dots: From Super-resolution Live-Cell Imaging to Highly Efficient Separation.
Zhi, Bo; Cui, Yi; Wang, Shengyang; Frank, Benjamin P; Williams, Denise N; Brown, Richard P; Melby, Eric S; Hamers, Robert J; Rosenzweig, Zeev; Fairbrother, D Howard; Orr, Galya; Haynes, Christy L
2018-06-15
As-synthesized malic acid carbon dots are found to possess photoblinking properties that are outstanding and superior compared to those of conventional dyes. Considering their excellent biocompatibility, malic acid carbon dots are suitable for super-resolution fluorescence localization microscopy under a variety of conditions, as we demonstrate in fixed and live trout gill epithelial cells. In addition, during imaging experiments, the so-called "excitation wavelength-dependent" emission was not observed for individual as-made malic acid carbon dots, which motivated us to develop a time-saving and high-throughput separation technique to isolate malic acid carbon dots into fractions of different particle size distributions using C 18 reversed-phase silica gel column chromatography. This post-treatment allowed us to determine how particle size distribution influences the optical properties of malic acid carbon dot fractions, that is, optical band gap energies and photoluminescence behaviors.
Study of CdTe quantum dots grown using a two-step annealing method
NASA Astrophysics Data System (ADS)
Sharma, Kriti; Pandey, Praveen K.; Nagpal, Swati; Bhatnagar, P. K.; Mathur, P. C.
2006-02-01
High size dispersion, large average radius of quantum dot and low-volume ratio has been a major hurdle in the development of quantum dot based devices. In the present paper, we have grown CdTe quantum dots in a borosilicate glass matrix using a two-step annealing method. Results of optical characterization and the theoretical model of absorption spectra have shown that quantum dots grown using two-step annealing have lower average radius, lesser size dispersion, higher volume ratio and higher decrease in bulk free energy as compared to quantum dots grown conventionally.
Peptide-Decorated Tunable-Fluorescence Graphene Quantum Dots.
Sapkota, Bedanga; Benabbas, Abdelkrim; Lin, Hao-Yu Greg; Liang, Wentao; Champion, Paul; Wanunu, Meni
2017-03-22
We report here the synthesis of graphene quantum dots with tunable size, surface chemistry, and fluorescence properties. In the size regime 15-35 nm, these quantum dots maintain strong visible light fluorescence (mean quantum yield of 0.64) and a high two-photon absorption (TPA) cross section (6500 Göppert-Mayer units). Furthermore, through noncovalent tailoring of the chemistry of these quantum dots, we obtain water-stable quantum dots. For example, quantum dots with lysine groups bind strongly to DNA in solution and inhibit polymerase-based DNA strand synthesis. Finally, by virtue of their mesoscopic size, the quantum dots exhibit good cell permeability into living epithelial cells, but they do not enter the cell nucleus.
DNA nanosensor based on biocompatible graphene quantum dots and carbon nanotubes.
Qian, Zhao Sheng; Shan, Xiao Yue; Chai, Lu Jing; Ma, Juan Juan; Chen, Jian Rong; Feng, Hui
2014-10-15
An ultrasensitive nanosensor based on fluorescence resonance energy transfer (FRET) between biocompatible graphene quantum dots and carbon nanotubes for DNA detection was reported. We take advantage of good biocompatibility and strong fluorescence of graphene quantum dots, base pairing specificity of DNA and unique fluorescence resonance energy transfer between graphene quantum dots and carbon nanotubes to achieve the analysis of low concentrations of DNA. Graphene quantum dots with high quantum yield up to 0.20 were prepared and served as the fluorophore of DNA probe. FRET process between graphene quantum dots-labeled probe and oxidized carbon nanotubes is easily achieved due to their efficient self-assembly through specific π-π interaction. This nanosensor can distinguish complementary and mismatched nucleic acid sequences with high sensitivity and good reproducibility. The detection method based on this nanosensor possesses a broad linear span of up to 133.0 nM and ultralow detection limit of 0.4 nM. The constructed nanosensor is expected to be highly biocompatible because of all its components with excellent biocompatibility. Copyright © 2014 Elsevier B.V. All rights reserved.
Growing High-Quality InAs Quantum Dots for Infrared Lasers
NASA Technical Reports Server (NTRS)
Qiu, Yueming; Uhl, David
2004-01-01
An improved method of growing high-quality InAs quantum dots embedded in lattice-matched InGaAs quantum wells on InP substrates has been developed. InAs/InGaAs/InP quantum dot semiconductor lasers fabricated by this method are capable of operating at room temperature at wavelengths greater than or equal to 1.8 mm. Previously, InAs quantum dot lasers based on InP substrates have been reported only at low temperature of 77 K at a wavelength of 1.9 micrometers. In the present method, as in the prior method, one utilizes metalorganic vapor phase epitaxy to grow the aforementioned semiconductor structures. The development of the present method was prompted in part by the observation that when InAs quantum dots are deposited on an InGaAs layer, some of the InAs in the InGaAs layer becomes segregated from the layer and contributes to the formation of the InAs quantum dots. As a result, the quantum dots become highly nonuniform; some even exceed a critical thickness, beyond which they relax. In the present method, one covers the InGaAs layer with a thin layer of GaAs before depositing the InAs quantum dots. The purpose and effect of this thin GaAs layer is to suppress the segregation of InAs from the InGaAs layer, thereby enabling the InAs quantum dots to become nearly uniform (see figure). Devices fabricated by this method have shown near-room-temperature performance.
NASA Astrophysics Data System (ADS)
Lozovoy, Kirill; Kokhanenko, Andrey; Voitsekhovskii, Alexander
2018-02-01
In this paper theoretical modeling of formation and growth of germanium-silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with crystallographic orientations (100) and (111) are considered. Special attention is paid to the question of growth of quantum dots on the silicon surface covered by tin, since germanium-silicon-tin system is extremely important for contemporary nano- and optoelectronics: for creation of photodetectors, solar cells, light-emitting diodes, and fast-speed transistors. A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski-Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.
NASA Astrophysics Data System (ADS)
Schuler, A.; Kostro, A.; Huriet, B.; Galande, C.; Scartezzini, J.-L.
2008-08-01
One promising application of semiconductor nanostructures in the field of photovoltaics might be quantum dot solar concentrators. Quantum dot containing nanocomposite thin films are synthesized at EPFL-LESO by a low cost sol-gel process. In order to study the potential of the novel planar photoluminescent concentrators, reliable computer simulations are needed. A computer code for ray tracing simulations of quantum dot solar concentrators has been developed at EPFL-LESO on the basis of Monte Carlo methods that are applied to polarization-dependent reflection/transmission at interfaces, photon absorption by the semiconductor nanocrystals and photoluminescent reemission. The software allows importing measured or theoretical absorption/reemission spectra describing the photoluminescent properties of the quantum dots. Hereby the properties of photoluminescent reemission are described by a set of emission spectra depending on the energy of the incoming photon, allowing to simulate the photoluminescent emission using the inverse function method. By our simulations, the importance of two main factors is revealed, an emission spectrum matched to the spectral efficiency curve of the photovoltaic cell, and a large Stokes shift, which is advantageous for the lateral energy transport. No significant energy losses are implied when the quantum dots are contained within a nanocomposite coating instead of being dispersed in the entire volume of the pane. Together with the knowledge on the optoelectronical properties of suitable photovoltaic cells, the simulations allow to predict the total efficiency of the envisaged concentrating PV systems, and to optimize photoluminescent emission frequencies, optical densities, and pane dimensions.
Lozovoy, Kirill; Kokhanenko, Andrey; Voitsekhovskii, Alexander
2018-02-02
In this paper theoretical modeling of formation and growth of germanium-silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with crystallographic orientations (100) and (111) are considered. Special attention is paid to the question of growth of quantum dots on the silicon surface covered by tin, since germanium-silicon-tin system is extremely important for contemporary nano- and optoelectronics: for creation of photodetectors, solar cells, light-emitting diodes, and fast-speed transistors. A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski-Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.
State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot
NASA Astrophysics Data System (ADS)
Ward, Daniel R.; Kim, Dohun; Savage, Donald E.; Lagally, Max G.; Foote, Ryan H.; Friesen, Mark; Coppersmith, Susan N.; Eriksson, Mark A.
2016-10-01
Universal quantum computation requires high-fidelity single-qubit rotations and controlled two-qubit gates. Along with high-fidelity single-qubit gates, strong efforts have been made in developing robust two-qubit logic gates in electrically gated quantum dot systems to realise a compact and nanofabrication-compatible architecture. Here we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between a pair of double quantum dots by measuring the detuning energy shift (≈75 μeV) of one double dot depending on the excess charge configuration of the other double dot. We further demonstrate that the strong capacitive coupling allows fast, state-conditional Landau-Zener-Stückelberg oscillations with a conditional π phase flip time of about 80 ps, showing a promising pathway towards multi-qubit entanglement and control in semiconductor quantum dots.
State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ward, Daniel R.; Kim, Dohun; Savage, Donald E.
Universal quantum computation requires high-fidelity single-qubit rotations and controlled two-qubit gates. Along with high-fidelity single-qubit gates, strong efforts have been made in developing robust two-qubit logic gates in electrically gated quantum dot systems to realise a compact and nanofabrication-compatible architecture. Here we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between a pair of doublemore » quantum dots by measuring the detuning energy shift (≈75 μeV) of one double dot depending on the excess charge configuration of the other double dot. Finally, we further demonstrate that the strong capacitive coupling allows fast, state-conditional Landau–Zener–Stückelberg oscillations with a conditional π phase flip time of about 80 ps, showing a promising pathway towards multi-qubit entanglement and control in semiconductor quantum dots.« less
State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot
Ward, Daniel R.; Kim, Dohun; Savage, Donald E.; ...
2016-10-18
Universal quantum computation requires high-fidelity single-qubit rotations and controlled two-qubit gates. Along with high-fidelity single-qubit gates, strong efforts have been made in developing robust two-qubit logic gates in electrically gated quantum dot systems to realise a compact and nanofabrication-compatible architecture. Here we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between a pair of doublemore » quantum dots by measuring the detuning energy shift (≈75 μeV) of one double dot depending on the excess charge configuration of the other double dot. Finally, we further demonstrate that the strong capacitive coupling allows fast, state-conditional Landau–Zener–Stückelberg oscillations with a conditional π phase flip time of about 80 ps, showing a promising pathway towards multi-qubit entanglement and control in semiconductor quantum dots.« less
Ju, Enguo; Liu, Zhen; Du, Yingda; Tao, Yu; Ren, Jinsong; Qu, Xiaogang
2014-06-24
Probes for detecting highly reactive oxygen species (hROS) are critical to both understanding the etiology of the disease and optimizing therapeutic interventions. However, problems such as low stability due to autoxidation and photobleaching and unsuitability for biological application in vitro and in vivo, as well as the high cost and complex procedure in synthesis and modification, largely limit their application. In this work, binary heterogeneous nanocomplexes (termed as C-dots-AuNC) constructed from gold clusters and carbon dots were reported. The fabrication takes full advantages of the inherent active groups on the surface of the nanoparticles to avoid tedious modification and chemical synthetic processes. Additionally, the assembly endowed C-dots-AuNC with improved performance such as the fluorescence enhancement of AuNCs and stability of C-dots to hROS. Moreover, the dual-emission property allows sensitive imaging and monitoring of the hROS signaling in living cells with high contrast. Importantly, with high physiological stability and excellent biocompatibility, C-dots-AuNC allows for the detection of hROS in the model of local ear inflammation.
A rapid low-cost high-density DNA-based multi-detection test for routine inspection of meat species.
Lin, Chun Chi; Fung, Lai Ling; Chan, Po Kwok; Lee, Cheuk Man; Chow, Kwok Fai; Cheng, Shuk Han
2014-02-01
The increasing occurrence of food frauds suggests that species identification should be part of food authentication. Current molecular-based species identification methods have their own limitations or drawbacks, such as relatively time-consuming experimental steps, expensive equipment and, in particular, these methods cannot identify mixed species in a single experiment. This project proposes an improved method involving PCR amplification of the COI gene and detection of species-specific sequences by hybridisation. Major innovative breakthrough lies in the detection of multiple species, including pork, beef, lamb, horse, cat, dog and mouse, from a mixed sample within a single experiment. The probes used are species-specific either in sole or mixed species samples. As little as 5 pg of DNA template in the PCR is detectable in the proposed method. By designing species-specific probes and adopting reverse dot blot hybridisation and flow-through hybridisation, a low-cost high-density DNA-based multi-detection test suitable for routine inspection of meat species was developed. © 2013.
NASA Astrophysics Data System (ADS)
Li, Xingfu; Shi, Qing; Wang, Huaping; Sun, Tao; Huang, Qiang; Fukuda, Toshio
2017-12-01
In this paper, a magnetically-guided assembly method is proposed to methodically construct diverse modules with a microfiber-based network for promoting nutrient circulation and waste excretion of cell culture. The microfiber is smoothly spun from the microfluidic device via precise control of the volumetric flow rate, and superparamagnetic nanoparticles within the alginate solution of the microfluidic fiber enable its magnetic response. The magnetized device is used to effectively capture the microfiber using its powerful magnetic flux density and high magnetic field gradient. Subsequently, the dot-matrix magnetic flux density is used to distribute the microfibers in an orderly fashion that depends on the array structure of the magnetized device. Furthermore, the magnetic microfluidic fibers are spatially organized into desired locations and are cross-aligned to form highly interconnected netlike modules in a liquid environment. Therefore, the experimental results herein demonstrate the structural controllability and stability of various modules and establish the effectiveness of the proposed method.
Green biosynthesis of biocompatible CdSe quantum dots in living Escherichia coli cells
NASA Astrophysics Data System (ADS)
Yan, Zhengyu; Qian, Jing; Gu, Yueqing; Su, Yilong; Ai, Xiaoxia; Wu, Shengmei
2014-03-01
A green and efficient biosynthesis method to prepare fluorescence-tunable biocompatible cadmium selenide quantum dots using Escherichia coli cells as biological matrix was proposed. Decisive factors in biosynthesis of cadmium selenide quantum dots in a designed route in Escherichia coli cells were elaborately investigated, including the influence of the biological matrix growth stage, the working concentration of inorganic reactants, and the co-incubation duration of inorganic metals to biomatrix. Ultraviolet-visible, photoluminescence, and inverted fluorescence microscope analysis confirmed the unique optical properties of the biosynthesized cadmium selenide quantum dots. The size distribution of the nanocrystals extracted from cells and the location of nanocrystals foci in vivo were also detected seriously by transmission electron microscopy. A surface protein capping layer outside the nanocrystals was confirmed by Fourier transform infrared spectroscopy measurements, which were supposed to contribute to reducing cytotoxicity and maintain a high viability of cells when incubating with quantum dots at concentrations as high as 2 μM. Cell morphology observation indicated an effective labeling of living cells by the biosynthesized quantum dots after a 48 h co-incubation. The present work demonstrated an economical and environmentally friendly approach to fabricating highly fluorescent quantum dots which were expected to be an excellent fluorescent dye for broad bio-imaging and labeling.
Zhang, Yugang; Li, Guopeng; Zhang, Ting; Song, Zihang; Wang, Hui; Zhang, Zhongping; Jiang, Yang
2018-03-01
The selenium dioxide was used as the precursor to synthesize wide-size-ranged CdSe quantum dots (2.4-5.7 nm) via hot-injection route. The CdSe quantum dots are featured with high crystalline, monodisperse, zinc blende structure and wide emission region (530-635 nm). In order to improve the stability and quantum yield, a phosphine-free single-molecular precursor approach is used to obtain CdSe/CdS core/shell quantum dots. The CdSe/CdS quantum dots are highly fluorescent with quantum yield up to 65%, and persist the good monodispersity and high crystallinity. Moreover, the quantum dots white light-emitting-diodes are fabricated by using the resultant red emission core/shell quantum dots and Y3Al5O12:Ce3+ yellow phosphors as color-conversion layers on a blue InGaN chip. The prepared light-emitting-diodes show good performance with CIE-1931 coordinated of (0.3583, 0.3349), an Ra of 92.9, and a Tc of 4410 K at 20 mA, which indicate that the combination of red-emission QDs and yellow phophors as a promising approach to obtain warm WLEDs with good color rendering.
NASA Astrophysics Data System (ADS)
Shen, Yaoming
Quantum dots (QDs)and Nano-crystals (NCs) have been studies for decades. Because of the nanoscale quantum confinement, delta shape like energy density states and narrowband emitters properties, they hold great promise for numerous optoelectronics and photonics applications. They could be used for tunable lasers, white LED, Nano-OLED, non-volatile memory and solar cells. They are also the most promising candidates for the quantum computing. The benefits for NCs over QDs is that NCs can be incorporated into a variety of polymers as well as thin films of bulk semiconductors. These exceptional flexibility and structural control distinguish NCs from the more traditional QD structures fabricated using epitaxial growth techniques. In my research of work, I studied the photoluminescence (PL) and absorption character of ensemble NCs incorporated in Polymethyl methacrylate (PMMA). To understand the behavior of the NCs in PMMA, it is important to measure a singe NC to avoid the inhomogenous broading of many NCs. So I particularly studied the behavior of a single NC in PMMA matrix. A microphotoluminescence setup to optically isolate a single nanocrystal is used. Random spectral shift and blinking behavior (on and off) are found. Addition to that, two color spectral shifting, is a major phenomena found in the system. Other interesting results such as PL intensity changes (decreasing or increasing with time) and quenching effect are observed and explained too. From the correlation function, we can distinguish the phonon replicas. The energy of these phonons can be calculated very accurately from the experiment result. The Huang-Rhys factors can be estimated too. Self-assembled semiconductor quantum dots (QDs), from highly strained-layer heteroepitaxy in the Stranski-Krastanow (S-K) growth mode, have been intensively studied because of the delta-function-like density of states, which is significant for optoelectronic applications. Spontaneous formation of semiconductor quantum-dot molecules (QDMs), which are clusters of a few QDs, has attracted attention as a possible implementation of future quantum devices such as quantum cellular antomata. With the advances in crystal growth techniques, the fabrication methods for nanostructures have been improved continuously. Lateral QDMs have been achieved. As a side topic, lateral QDMs have been studied and the result is presented in the last chapter.
Fu, Zhaofu; Li, Gongke; Hu, Yufei
2016-12-01
A novel chemiluminescence (CL) system based on the reaction of fluorescent water-soluble nitrogen-rich quantum dots (N-dots) and diperiodatoargentate(III) (DPA) was developed. The prepared N-dots have a small size (≤10 nm) and high percentage of nitrogen (39.9 %), which exceeds the content of carbon in the same N-dots. The N-dots exhibit characteristic blue fluorescence under UV light and up-conversion luminescence. The relatively intense CL emission is based on the direct oxidation of N-dots by DPA. The CL emission may be attributed to the high nitrogen content and the special structure of the N-dots. The CL mechanism of N-dots and DPA was investigated by using CL, UV-Vis absorption, IR, fluorescence, and radical scavenging experiments. This investigation provides a way to study the optical properties of N-dots. The analytical applicability of the N-dots and DPA CL system in the determination of ferulic acid (FA) was explored. The CL intensity was linearly proportional to the concentration of ferulic acid from 3.0 × 10 -7 to 1.0 × 10 -5 g mL -1 with a detection limit of 8.0 × 10 -8 g mL -1 (3σ); the relative standard deviation was 2.4 % for 4.0 × 10 -7 g mL -1 FA (n = 9). The proposed method was successfully applied to the determination of ferulic acid in Angelica sinensis. The study provides valuable insight into the role of nitrogen-rich quantum dots in CL.
Two-dimensional simulation of GaAsSb/GaAs quantum dot solar cells
NASA Astrophysics Data System (ADS)
Kunrugsa, Maetee
2018-06-01
Two-dimensional (2D) simulation of GaAsSb/GaAs quantum dot (QD) solar cells is presented. The effects of As mole fraction in GaAsSb QDs on the performance of the solar cell are investigated. The solar cell is designed as a p-i-n GaAs structure where a single layer of GaAsSb QDs is introduced into the intrinsic region. The current density–voltage characteristics of QD solar cells are derived from Poisson’s equation, continuity equations, and the drift-diffusion transport equations, which are numerically solved by a finite element method. Furthermore, the transition energy of a single GaAsSb QD and its corresponding wavelength for each As mole fraction are calculated by a six-band k · p model to validate the position of the absorption edge in the external quantum efficiency curve. A GaAsSb/GaAs QD solar cell with an As mole fraction of 0.4 provides the best power conversion efficiency. The overlap between electron and hole wave functions becomes larger as the As mole fraction increases, leading to a higher optical absorption probability which is confirmed by the enhanced photogeneration rates within and around the QDs. However, further increasing the As mole fraction results in a reduction in the efficiency because the absorption edge moves towards shorter wavelengths, lowering the short-circuit current density. The influences of the QD size and density on the efficiency are also examined. For the GaAsSb/GaAs QD solar cell with an As mole fraction of 0.4, the efficiency can be improved to 26.2% by utilizing the optimum QD size and density. A decrease in the efficiency is observed at high QD densities, which is attributed to the increased carrier recombination and strain-modified band structures affecting the absorption edges.
Fischer, Sean A; Lingerfelt, David B; May, Joseph W; Li, Xiaosong
2014-09-07
The unique electronic structure of Mn(2+)-doped ZnO quantum dots gives rise to photoionization states that can be used to manipulate the magnetic state of the material and to generate zero-reabsorption luminescence. Fast formation and long non-radiative decay of this photoionization state is a necessary requirement for these important applications. In this work, surface hopping based non-adiabatic molecular dynamics are used to demonstrate the fast formation of a metal-to-ligand charge transfer state in a Mn(2+)-doped ZnO quantum dot. The formation occurs on an ultrafast timescale and is aided by the large density of states and significant mixing of the dopant Mn(2+) 3dt2 levels with the valence-band levels of the ZnO lattice. The non-radiative lifetime of the photoionization states is also investigated.
NASA Astrophysics Data System (ADS)
Suarez, Ernesto; Chan, Pik-Yiu; Lingalugari, Murali; Ayers, John E.; Heller, Evan; Jain, Faquir
2013-11-01
This paper describes the use of II-VI lattice-matched gate insulators in quantum dot gate three-state and flash nonvolatile memory structures. Using silicon-on-insulator wafers we have fabricated GeO x -cladded Ge quantum dot (QD) floating gate nonvolatile memory field-effect transistor devices using ZnS-Zn0.95Mg0.05S-ZnS tunneling layers. The II-VI heteroepitaxial stack is nearly lattice-matched and is grown using metalorganic chemical vapor deposition on a silicon channel. This stack reduces the interface state density, improving threshold voltage variation, particularly in sub-22-nm devices. Simulations using self-consistent solutions of the Poisson and Schrödinger equations show the transfer of charge to the QD layers in three-state as well as nonvolatile memory cells.
NASA Technical Reports Server (NTRS)
Leon, R.; Marcinkevicius, S.; Siegert, J.; Magness, B.; Taylor, W.; Lobo, C.
2002-01-01
The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional quantum confinement. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAs/AlGaAs), QD surface density (4x10^8 to 3x10'^10 cm^-2), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses, are also observed in InGaAs/GaAs (100) QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.
Sterling, Timothy R; Lehmann, Harold P; Frieden, Thomas R
2003-03-15
This study sought to determine the impact of the World Health Organization's directly observed treatment strategy (DOTS) compared with that of DOTS-plus on tuberculosis deaths, mainly in the developing world. Decision analysis with Monte Carlo simulation of a Markov decision tree. People with smear positive pulmonary tuberculosis. Analyses modelled different levels of programme effectiveness of DOTS and DOTS-plus, and high (10%) and intermediate (3%) proportions of primary multidrug resistant tuberculosis, while accounting for exogenous reinfection. The cumulative number of tuberculosis deaths per 100 000 population over 10 years. The model predicted that under DOTS, 276 people would die from tuberculosis (24 multidrug resistant and 252 not multidrug resistant) over 10 years under optimal implementation in an area with 3% primary multidrug resistant tuberculosis. Optimal implementation of DOTS-plus would result in four (1.5%) fewer deaths. If implementation of DOTS-plus were to result in a decrease of just 5% in the effectiveness of DOTS, 16% more people would die with tuberculosis than under DOTS alone. In an area with 10% primary multidrug resistant tuberculosis, 10% fewer deaths would occur under optimal DOTS-plus than under optimal DOTS, but 16% more deaths would occur if implementation of DOTS-plus were to result in a 5% decrease in the effectiveness of DOTS CONCLUSIONS: Under optimal implementation, fewer tuberculosis deaths would occur under DOTS-plus than under DOTS. If, however, implementation of DOTS-plus were associated with even minimal decreases in the effectiveness of treatment, substantially more patients would die than under DOTS.
SPM observation of nano-dots induced by slow highly charged ions
NASA Astrophysics Data System (ADS)
Nakamura, Nobuyuki; Terada, Masashi; Nakai, Yoichi; Kanai, Yasuyuki; Ohtani, Shunsuke; Komaki, Ken-ichiro; Yamazaki, Yasunori
2005-05-01
We have observed nano-dots on a highly oriented pyrolytic graphite (HOPG) surface produced by highly charged ion impacts with a scanning probe microscope. In order to clarify the role of potential and kinetic energies in surface modification, we have measured the kinetic energy and incident ion charge dependences of the dot size. The results showed that the potential energy or the incident ion charge has strong influence on the surface modification rather than the kinetic energy.
NASA Astrophysics Data System (ADS)
Das, Poushali; Bose, Madhuparna; Ganguly, Sayan; Mondal, Subhadip; Das, Amit Kumar; Banerjee, Susanta; Das, Narayan Chandra
2017-05-01
Fluorescent carbon dots, zero-dimensional nanomaterials with surface ligands, have been studied extensively over the past few years in biolabelling or fluorescence-based live cell assays. In the past, synthetic organic dyes have been used as cell tracking materials, but they have severe limitations; fluorescent carbon dots may pave the way to biolabelling and cell imaging. In this work, green fluorescent carbon dots have been synthesized from a green source, gram, without any sort of covalent or ionic modifications. These gram-derived carbon dots are unique with respect to synthetic commercial cell-tracking dyes as they are non-toxic, cell internalization occurs quickly, and they have excellent bioconjugation with bacterial cells. Our aim is to establish these carbon dots in a biolabelling assay with its other physicochemical features like the tunable luminescence property, high degree of water solubility and low toxicity, towards various environments (wide range of pH, high ionic strength). Our study introduces a new perspective on the commercialization of carbon dots as a potential alternative to synthetic organic dyes for fluorescence-based cell-labelling assays.
Das, Poushali; Ganguly, Sayan; Bose, Madhuparna; Mondal, Subhadip; Choudhary, Sumita; Gangopadhyay, Subhashis; Das, Amit Kumar; Banerjee, Susanta; Das, Narayan Chandra
2018-07-01
Carbon dots with heteroatom co-doping associated with consummate luminescence features are of acute interest in diverse applications such as biomolecule markers, chemical sensing, photovoltaic, and trace element detection. Herein, we demonstrate a straightforward, highly efficient hydrothermal dehydration technique to synthesize zinc and nitrogen co-doped multifunctional carbon dots (N, Zn-CDs) with superior quantum yield (50.8%). The luminescence property of the carbon dots can be tuned by regulating precursor ratio and surface oxidation states in the carbon dots. A unique attribution of the as-prepared carbon dots is the high monodispersity and robust excitation-independent emission behavior that is stable in enormously reactive environment and over a wide range of pH. These N, Zn-CDs unveils captivating bacteriostatic activity against gram-negative bacteria Escherichia coli. Furthermore, the excellent luminescence properties of these carbon dots were applied as a platform of sensitive biosensor for the detection of hydrogen peroxide. Under optimized conditions, these N, Zn-CDs reveals high sensitivity over a broad range of concentrations with an ultra-low limit of detection (LOD) indicating their pronounced prospective as a fluorescent probe for chemical sensing. Overall, the experimental outcomes propose that these zero-dimensional nano-dots could be developed as bacteriostatic agents to control and prevent the persistence and spreading of bacterial infections and as a fluorescent probe for hydrogen peroxide detection. Copyright © 2018 Elsevier B.V. All rights reserved.
Charge reconfiguration in arrays of quantum dots
NASA Astrophysics Data System (ADS)
Bayer, Johannes C.; Wagner, Timo; Rugeramigabo, Eddy P.; Haug, Rolf J.
2017-12-01
Semiconductor quantum dots are potential building blocks for scalable qubit architectures. Efficient control over the exchange interaction and the possibility of coherently manipulating electron states are essential ingredients towards this goal. We studied experimentally the shuttling of electrons trapped in serial quantum dot arrays isolated from the reservoirs. The isolation hereby enables a high degree of control over the tunnel couplings between the quantum dots, while electrons can be transferred through the array by gate voltage variations. Model calculations are compared with our experimental results for double, triple, and quadruple quantum dot arrays. We are able to identify all transitions observed in our experiments, including cotunneling transitions between distant quantum dots. The shuttling of individual electrons between quantum dots along chosen paths is demonstrated.
Hou, Hongshuai; Shao, Lidong; Zhang, Yan; Zou, Guoqiang; Chen, Jun; Ji, Xiaobo
2017-01-01
Large-area phosphorus-doped carbon nanosheets (P-CNSs) are first obtained from carbon dots (CDs) through self-assembly driving from thermal treatment with Na catalysis. This is the first time to realize the conversion from 0D CDs to 2D nanosheets doped with phosphorus. The sodium storage behavior of phosphorus-doped carbon material is also investigated for the first time. As anode material for sodium-ion batteries (SIBs), P-CNSs exhibit superb performances for electrochemical storage of sodium. When cycled at 0.1 A g -1 , the P-CNSs electrode delivers a high reversible capacity of 328 mAh g -1 , even at a high current density of 20 A g -1 , a considerable capacity of 108 mAh g -1 can still be maintained. Besides, this material also shows excellent cycling stability, at a current density of 5 A g -1 , the reversible capacity can still reach 149 mAh g -1 after 5000 cycles. This work will provide significant value for the development of both carbon materials and SIBs anode materials.
Role of refractory inclusions in the radiation-induced microstructure of APMT
NASA Astrophysics Data System (ADS)
Zhang, Dalong; Briggs, Samuel A.; Field, Kevin G.
2018-07-01
Kanthal APMT is a promising FeCrAl-based alloy for accident-tolerant fuel cladding because of its excellent high-temperature oxidation resistance. In this study, powder metallurgy Kanthal APMT alloy, neutron irradiated to 1.8 dpa at nominally 382 °C, was characterized. On-zone STEM imaging revealed that radiation-induced dislocation loops with Burgers vectors of a/2<111> or a < 100 > and black dots tended to agglomerate in the vicinity of refractory inclusions. The densities and sizes of these loops decreased with distance from the inclusion-matrix interfaces. In addition, high-resolution energy-dispersive X-ray spectroscopy mapping was used to determine the inclusions to be either yttrium- or silicon-rich, as well as to detect the radial distribution of radiation-enhanced α‧ phase near these inclusions. A high density of randomly distributed Cr-rich α‧ phase was found, regardless of the presence of inclusions. Results from this study provide insights into how microstructural features can locally tailor the radiation-induced defects in FeCrAl-based alloys.
Native gallium adatoms discovered on atomically-smooth gallium nitride surfaces at low temperature.
Alam, Khan; Foley, Andrew; Smith, Arthur R
2015-03-11
In advanced compound semiconductor devices, such as in quantum dot and quantum well systems, detailed atomic configurations at the growth surfaces are vital in determining the structural and electronic properties. Therefore, it is important to investigate the surface reconstructions in order to make further technological advancements. Usually, conventional semiconductor surfaces (e.g., arsenides, phosphides, and antimonides) are highly reactive due to the existence of a high density of group V (anion) surface dangling bonds. However, in the case of nitrides, group III rich growth conditions in molecular beam epitaxy are usually preferred leading to group III (Ga)-rich surfaces. Here, we use low-temperature scanning tunneling microscopy to reveal a uniform distribution of native gallium adatoms with a density of 0.3%-0.5% of a monolayer on the clean, as-grown surface of nitrogen polar GaN(0001̅) having the centered 6 × 12 reconstruction. Unseen at room temperature, these Ga adatoms are strongly bound to the surface but move with an extremely low surface diffusion barrier and a high density saturation coverage in thermodynamic equilibrium with Ga droplets. Furthermore, the Ga adatoms reveal an intrinsic surface chirality and an asymmetric site occupation. These observations can have important impacts in the understanding of gallium nitride surfaces.
Tu, Zhiming; Yang, Gongzheng; Song, Huawei; Wang, Chengxin
2017-01-11
Due to its high theoretical capacity (978 mA h g -1 ), natural abundance, environmental friendliness, and low cost, zinc oxide is regarded as one of the most promising anode materials for lithium-ion batteries (LIBs). A lot of research has been done in the past few years on this topic. However, hardly any research on amorphous ZnO for LIB anodes has been reported despite the fact that the amorphous type could have superior electrochemical performance due to its isotropic nature, abundant active sites, better buffer effect, and different electrochemical reaction details. In this work, we develop a simple route to prepare an amorphous ZnO quantum dot (QDs)/mesoporous carbon bubble composite. The composite consists of two parts: mesoporous carbon bubbles as a flexible skeleton and monodisperse amorphous zinc oxide QDs (smaller than 3 nm) encapsulated in an amorphous carbon matrix as a continuous coating tightly anchored on the surface of mesoporous carbon bubbles. With the benefits of abundant active sites, amorphous nature, high specific surface area, buffer effect, hierarchical pores, stable interconnected conductive network, and multidimensional electron transport pathways, the amorphous ZnO QD/mesoporous carbon bubble composite delivers a high reversible capacity of nearly 930 mA h g -1 (at current density of 100 mA g -1 ) with almost 90% retention for 85 cycles and possesses a good rate performance. This work opens the possibility to fabricate high-performance electrode materials for LIBs, especially for amorphous metal oxide-based materials.
Effect of Ligand Exchange on the Photoluminescence Properties of Cu-Doped Zn-In-Se Quantum Dots
NASA Astrophysics Data System (ADS)
Dong, Xiaofei; Xu, Jianping; Yang, Hui; Zhang, Xiaosong; Mo, Zhaojun; Shi, Shaobo; Li, Lan; Yin, Shougen
2018-04-01
The surface-bound ligands of a semiconductor nanocrystal can affect its electron transition behavior. We investigate the photoluminescence (PL) properties of Cu-doped Zn-In-Se quantum dots (QDs) through the exchange of oleylamine with 6-mercaptohexanol (MCH). Fourier transform infrared and 1H nuclear magnetic resonance spectroscopies, and mass spectrometry reveal that the short-chain MCH molecules are bound to the QD surface. The emission peaks remain unchanged after ligand exchange, and the PL quantum yield is reduced from 49% to 38%. The effects of particle size and defect type on the change in PL behavior upon ligand substitution are excluded through high-resolution transmission electron microscopy, UV-Vis absorption, and PL spectroscopies. The origin of the decreased PL intensity is associated with increased ligand density and the stronger ligand electron-donating abilities of MCH-capped QDs that induce an increase in the nonradiative transition probability. A lower PL quenching transition temperature is observed for MCH-capped QDs and is associated with increasing electron-acoustic phonon coupling due to the lower melting temperature of MCH.
Näsi, Tiina; Mäki, Hanna; Hiltunen, Petri; Heiskala, Juha; Nissilä, Ilkka; Kotilahti, Kalle; Ilmoniemi, Risto J
2013-03-01
The effect of task-related extracerebral circulatory changes on diffuse optical tomography (DOT) of brain activation was evaluated using experimental data from 14 healthy human subjects and computer simulations. Total hemoglobin responses to weekday-recitation, verbal-fluency, and hand-motor tasks were measured with a high-density optode grid placed on the forehead. The tasks caused varying levels of mental and physical stress, eliciting extracerebral circulatory changes that the reconstruction algorithm was unable to fully distinguish from cerebral hemodynamic changes, resulting in artifacts in the brain activation images. Crosstalk between intra- and extracranial layers was confirmed by the simulations. The extracerebral effects were attenuated by superficial signal regression and depended to some extent on the heart rate, thus allowing identification of hemodynamic changes related to brain activation during the verbal-fluency task. During the hand-motor task, the extracerebral component was stronger, making the separation less clear. DOT provides a tool for distinguishing extracerebral components from signals of cerebral origin. Especially in the case of strong task-related extracerebral circulatory changes, however, sophisticated reconstruction methods are needed to eliminate crosstalk artifacts.
Hybrid organic-inorganic inks flatten the energy landscape in colloidal quantum dot solids.
Liu, Mengxia; Voznyy, Oleksandr; Sabatini, Randy; García de Arquer, F Pelayo; Munir, Rahim; Balawi, Ahmed Hesham; Lan, Xinzheng; Fan, Fengjia; Walters, Grant; Kirmani, Ahmad R; Hoogland, Sjoerd; Laquai, Frédéric; Amassian, Aram; Sargent, Edward H
2017-02-01
Bandtail states in disordered semiconductor materials result in losses in open-circuit voltage (V oc ) and inhibit carrier transport in photovoltaics. For colloidal quantum dot (CQD) films that promise low-cost, large-area, air-stable photovoltaics, bandtails are determined by CQD synthetic polydispersity and inhomogeneous aggregation during the ligand-exchange process. Here we introduce a new method for the synthesis of solution-phase ligand-exchanged CQD inks that enable a flat energy landscape and an advantageously high packing density. In the solid state, these materials exhibit a sharper bandtail and reduced energy funnelling compared with the previous best CQD thin films for photovoltaics. Consequently, we demonstrate solar cells with higher V oc and more efficient charge injection into the electron acceptor, allowing the use of a closer-to-optimum bandgap to absorb more light. These enable the fabrication of CQD solar cells made via a solution-phase ligand exchange, with a certified power conversion efficiency of 11.28%. The devices are stable when stored in air, unencapsulated, for over 1,000 h.
Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent
NASA Astrophysics Data System (ADS)
Vandersypen, L. M. K.; Bluhm, H.; Clarke, J. S.; Dzurak, A. S.; Ishihara, R.; Morello, A.; Reilly, D. J.; Schreiber, L. R.; Veldhorst, M.
2017-09-01
Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled via electrical signals, based on the success of conventional semiconductor integrated circuits. However, the wiring and interconnect requirements for quantum circuits are completely different from those for classical circuits, as individual direct current, pulsed and in some cases microwave control signals need to be routed from external sources to every qubit. This is further complicated by the requirement that these spin qubits currently operate at temperatures below 100 mK. Here, we review several strategies that are considered to address this crucial challenge in scaling quantum circuits based on electron spin qubits. Key assets of spin qubits include the potential to operate at 1 to 4 K, the high density of quantum dots or donors combined with possibilities to space them apart as needed, the extremely long-spin coherence times, and the rich options for integration with classical electronics based on the same technology.
Quantum dot light emitting devices for photomedical applications.
Chen, Hao; He, Juan; Lanzafame, Raymond; Stadler, Istvan; Hamidi, Hamid El; Liu, Hui; Celli, Jonathan; Hamblin, Michael R; Huang, Yingying; Oakley, Emily; Shafirstein, Gal; Chung, Ho-Kyoon; Wu, Shin-Tson; Dong, Yajie
2017-03-01
While OLEDs have struggled to find a niche lighting application that can fully take advantage of their unique form factors as thin, flexible, lightweight and uniformly large-area luminaire, photomedical researchers have been in search of low-cost, effective illumination devices with such form factors that could facilitate widespread clinical applications of photodynamic therapy (PDT) or photobiomodulation (PBM). Although existing OLEDs with either fluorescent or phosphorescent emitters cannot achieve the required high power density at the right wavelength windows for photomedicine, the recently developed ultrabright and efficient deep red quantum dot light emitting devices (QLEDs) can nicely fit into this niche. Here, we report for the first time the in-vitro study to demonstrate that this QLED-based photomedical approach could increase cell metabolism over control systems for PBM and kill cancerous cells efficiently for PDT. The perspective of developing wavelength-specific, flexible QLEDs for two critical photomedical fields (wound repair and cancer treatment) will be presented with their potential impacts summarized. The work promises to generate flexible QLED-based light sources that could enable the widespread use and clinical acceptance of photomedical strategies including PDT and PBM.
Quantum dot light emitting devices for photomedical applications
Chen, Hao; He, Juan; Lanzafame, Raymond; Stadler, Istvan; Hamidi, Hamid El; Liu, Hui; Celli, Jonathan; Hamblin, Michael R.; Huang, Yingying; Oakley, Emily; Shafirstein, Gal; Chung, Ho-Kyoon; Wu, Shin-Tson; Dong, Yajie
2017-01-01
While OLEDs have struggled to find a niche lighting application that can fully take advantage of their unique form factors as thin, flexible, lightweight and uniformly large-area luminaire, photomedical researchers have been in search of low-cost, effective illumination devices with such form factors that could facilitate widespread clinical applications of photodynamic therapy (PDT) or photobiomodulation (PBM). Although existing OLEDs with either fluorescent or phosphorescent emitters cannot achieve the required high power density at the right wavelength windows for photomedicine, the recently developed ultrabright and efficient deep red quantum dot light emitting devices (QLEDs) can nicely fit into this niche. Here, we report for the first time the in-vitro study to demonstrate that this QLED-based photomedical approach could increase cell metabolism over control systems for PBM and kill cancerous cells efficiently for PDT. The perspective of developing wavelength-specific, flexible QLEDs for two critical photomedical fields (wound repair and cancer treatment) will be presented with their potential impacts summarized. The work promises to generate flexible QLED-based light sources that could enable the widespread use and clinical acceptance of photomedical strategies including PDT and PBM. PMID:28867926
DETECTABILITY OF FREE FLOATING PLANETS IN OPEN CLUSTERS WITH THE JAMES WEBB SPACE TELESCOPE
DOE Office of Scientific and Technical Information (OSTI.GOV)
Pacucci, Fabio; Ferrara, Andrea; D'Onghia, Elena
Recent observations have shown the presence of extra-solar planets in Galactic open stellar clusters, such as in Praesepe (M44). These systems provide a favorable environment for planetary formation due to the high heavy-element content exhibited by the majority of their population. The large stellar density, and corresponding high close-encounter event rate, may induce strong perturbations of planetary orbits with large semimajor axes. Here we present a set of N-body simulations implementing a novel scheme to treat the tidal effects of external stellar perturbers on planetary orbit eccentricity and inclination. By simulating five nearby open clusters, we determine the rate ofmore » occurrence of bodies extracted from their parent stellar system by quasi-impulsive tidal interactions. We find that the specific free-floating planet production rate N-dot {sub o} (total number of free-floating planets per unit of time, normalized by the total number of stars), is proportional to the stellar density ρ{sub *} of the cluster: N-dot {sub o}=αρ{sub ⋆}, with α = (23 ± 5) × 10{sup –6} pc{sup 3} Myr{sup –1}. For the Pleiades (M45), we predict that ∼26% of stars should have lost their planets. This raises the exciting possibility of directly observing these wandering planets with the James Webb Space Telescope in the near-infrared band. Assuming a surface temperature for the planet of ∼500 K, a free-floating planet of Jupiter size inside the Pleiades would have a specific flux of F {sub ν} (4.4 μm) ≈4 × 10{sup 2} nJy, which would lead to a very clear detection (S/N ∼ 100) in only one hour of integration.« less
THE STAR FORMATION LAWS OF EDDINGTON-LIMITED STAR-FORMING DISKS
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ballantyne, D. R.; Armour, J. N.; Indergaard, J., E-mail: david.ballantyne@physics.gatech.edu
2013-03-10
Two important avenues into understanding the formation and evolution of galaxies are the Kennicutt-Schmidt (K-S) and Elmegreen-Silk (E-S) laws. These relations connect the surface densities of gas and star formation ({Sigma}{sub gas} and {Sigma}-dot{sub *}, respectively) in a galaxy. To elucidate the K-S and E-S laws for disks where {Sigma}{sub gas} {approx}> 10{sup 4} M{sub Sun} pc{sup -2}, we compute 132 Eddington-limited star-forming disk models with radii spanning tens to hundreds of parsecs. The theoretically expected slopes ( Almost-Equal-To 1 for the K-S law and Almost-Equal-To 0.5 for the E-S relation) are relatively robust to spatial averaging over the disks.more » However, the star formation laws exhibit a strong dependence on opacity that separates the models by the dust-to-gas ratio that may lead to the appearance of a erroneously large slope. The total infrared luminosity (L{sub TIR}) and multiple carbon monoxide (CO) line intensities were computed for each model. While L{sub TIR} can yield an estimate of the average {Sigma}-dot{sub *} that is correct to within a factor of two, the velocity-integrated CO line intensity is a poor proxy for the average {Sigma}{sub gas} for these warm and dense disks, making the CO conversion factor ({alpha}{sub CO}) all but useless. Thus, observationally derived K-S and E-S laws at these values of {Sigma}{sub gas} that uses any transition of CO will provide a poor measurement of the underlying star formation relation. Studies of the star formation laws of Eddington-limited disks will require a high-J transition of a high density molecular tracer, as well as a sample of galaxies with known metallicity estimates.« less
Zhang, Jiaxiang; Wildmann, Johannes S; Ding, Fei; Trotta, Rinaldo; Huo, Yongheng; Zallo, Eugenio; Huber, Daniel; Rastelli, Armando; Schmidt, Oliver G
2015-12-01
Triggered sources of entangled photon pairs are key components in most quantum communication protocols. For practical quantum applications, electrical triggering would allow the realization of compact and deterministic sources of entangled photons. Entangled-light-emitting-diodes based on semiconductor quantum dots are among the most promising sources that can potentially address this task. However, entangled-light-emitting-diodes are plagued by a source of randomness, which results in a very low probability of finding quantum dots with sufficiently small fine structure splitting for entangled-photon generation (∼10(-2)). Here we introduce strain-tunable entangled-light-emitting-diodes that exploit piezoelectric-induced strains to tune quantum dots for entangled-photon generation. We demonstrate that up to 30% of the quantum dots in strain-tunable entangled-light-emitting-diodes emit polarization-entangled photons. An entanglement fidelity as high as 0.83 is achieved with fast temporal post selection. Driven at high speed, that is 400 MHz, strain-tunable entangled-light-emitting-diodes emerge as promising devices for high data-rate quantum applications.
Wave propagation and noncollisional heating in neutral loop and helicon discharges
DOE Office of Scientific and Technical Information (OSTI.GOV)
Celik, Y.; Crintea, D. L.; Luggenhoelscher, D.
2011-02-15
Heating mechanisms in two types of magnetized low pressure rf (13.56 MHz) discharges are investigated: a helicon discharge and a neutral loop discharge. Radial B-dot probe measurements demonstrate that the neutral loop discharge is sustained by helicon waves as well. Axial B-dot probe measurements reveal standing wave and beat patterns depending on the dc magnetic field strength and plasma density. In modes showing a strong wave damping, the plasma refractive index attains values around 100, leading to electron-wave interactions. In strongly damped modes, the radial plasma density profiles are mainly determined by power absorption of the propagating helicon wave, whereasmore » in weakly damped modes, inductive coupling dominates. Furthermore, an azimuthal diamagnetic drift is identified. Measurements of the helicon wave phase demonstrate that initial plane wave fronts are bent during their axial propagation due to the inhomogeneous density profile. A developed analytical standing wave model including Landau damping reproduces very well the damping of the axial helicon wave field. This comparison underlines the theory whereupon Landau damping of electrons traveling along the field lines at speeds close to the helicon phase velocity is the main damping mechanism in both discharges.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Sarkar, Sunandan; Rajbanshi, Biplab; Sarkar, Pranab, E-mail: pranab.sarkar@visva-bharati.ac.in
2014-09-21
By using the density-functional tight binding method, we studied the electronic structure of CdSe quantum dot(QD)-buckminsterfullerene (C{sub 60}) hybrid systems as a function of both the size of the QD and concentration of the fullerene molecule. Our calculation reveals that the lowest unoccupied molecular orbital energy level of the hybrid CdSeQD-C{sub 60} systems lies on the fullerene moiety, whereas the highest occupied molecular orbital (HOMO) energy level lies either on the QD or the fullerene depending on size of the CdSe QD. We explored the possibility of engineering the energy level alignment by varying the size of the CdSe QD.more » With increase in size of the QD, the HOMO level is shifted upward and crosses the HOMO level of the C{sub 60}-thiol molecule resulting transition from the type-I to type-II band energy alignment. The density of states and charge density plot support these types of band gap engineering of the CdSe-C{sub 60} hybrid systems. This type II band alignment indicates the possibility of application of this nanohybrid for photovoltaic purpose.« less
Understanding/Modelling of Thermal and Radiation Benefits of Quantum Dot Solar Cells
2008-07-11
GaAs solar cells have been investigated. Strain compensation is a key step in realizing high- efficiency quantum dots solar cells (QDSC). InAs...factor. A strong correlation between the temperature dependent quantum dot electroluminescence peak emission wavelength and the sub-GaAs bandgap...increased efficiency and radiation resistance devices. The incorporation of quantum dots (QDs) into traditional single or multi-junction crystalline solar
High Frequency Magnetic Field Direction Finding Using MGL-S9A B-dot Sensors
2013-03-21
relationship for incident plane wave on a linear array . . . . . . . . . . . 26 3.1 B-dot sensor design in CST Microwave Studio...CST Microwave Studio with an infinite PEC ground plane. . . . . . . . . . . . . . . 50 4.2 Radiation pattern of a single B-dot sensor at 32 MHz...simulated in CST Microwave Studio with an infinite PEC ground plane. . . . . . . . . . . . . . . 50 4.3 Radiation efficiency of single loop versus B-dot
Directed self-assembly of metal oxide quantum dots: Copper oxide on strontium titanium trioxide
NASA Astrophysics Data System (ADS)
Du, Yingge
2007-12-01
This dissertation explores the use of focused ion-beams (FIB) to direct the self-assembly of Cu2O quantum dots (QDs) on SrTiO3 (100) substrates via point implants of Ga+ at 30 keV After Ga+ implant and subsequent chemical and thermal surface preparation, oxygen plasma-assisted molecular beam-epitaxy (OPA-MBE) is used to grow Cu 2O QDs. The research of this dissertation finds that, for high FIB implant dose (5.6x1018 ions/cm2) and large interdot spacing (1000 nm), multiple QDs can be formed preferentially on the edges of FIB modified pits. For lower doses and/or smaller interdot spacings (8.8x1014 ions/cm2 and lower, 130 or 167 nm), individual QDs nucleate first within the pits. Under carefully controlled conditions, the separation and arrangement of the Cu2O QDs follows the FIB patterned template. This study finds that the FIB directed self-assembly technique works for different FIB doses, FIB interdot spacings and OPA-MBE deposition thicknesses, suggesting that this method is robust and flexible. Examination of QD growth on low-dose implant surfaces revealed a multi-step growth process. Initial deposition filled the pits just to the level of the original unmodified crystal growth surface. Following a pause in QD growth and the deposition of additional material, QD growth resumed on top of these perfectly filled pits. As growth continued, the dots reached a self-limiting size such that additional material deposition generated more QDs of similar size rather than continued growth of the large dots. This dissertation also seeks to increase understanding of the relative rolls played in the directed self-assembly process by local substrate chemistry, surface morphology, crystal-linity, and stress/strain. Experimental results revealed that although Ga concentration was noticeably higher on modified regions after FIB implant, no measurable Ga was found on the surface after high temperature annealing performed prior to QD growth. Thus Ga related chemistry/reactivity changes appear unlikely to be primary motivators of directed self-assembly. Low dose implant patterning created local depressions on the surface. This pit shape topography appears to be a strong contributor to the preferred nucleation within the pits, as the sidewalls of those surface pits could contain a high density of surface steps, which are known to decrease the adatom diffusion length and act as sinks to absorb the diffusing species. To further interpret the low dose implant results, calculations of total free-energy changes have been performed to study the differences between nucleation on a flat substrate surface and nucleation within a surface pit. This analysis shows that nucleation within a pit is almost always energetically favorable. In some special cases, assuming the pits have an inverted pyramidal shape, calculations show that island formation within the pits lowers the system total free-energy from the beginning of growth, i.e. there is no critical radius or energy barrier before a stable nucleus can be formed. The major geometric difference between high and low dose implantation area was revealed by AFM studies, which showed that pits generated by high implantation dose were still rounded after annealing and before growth, while pits from lower doses patterning had developed square edges oriented along the <100> directions of the substrate. These geometric differences suggest differences in crystalline or strain/stress states, either/both of which could have caused the subsequent different island growth characteristics. Continued study of directed self-assembly of metal oxide quantum dots should lead to better understanding of the creation of well ordered, precisely controlled, high density QD arrays, ultimately contributing to the development of next generation nanoelectronic, magnetic, and optical devices.
Non-blinking quantum dot with a plasmonic nanoshell resonator
NASA Astrophysics Data System (ADS)
Ji, Botao; Giovanelli, Emerson; Habert, Benjamin; Spinicelli, Piernicola; Nasilowski, Michel; Xu, Xiangzhen; Lequeux, Nicolas; Hugonin, Jean-Paul; Marquier, Francois; Greffet, Jean-Jacques; Dubertret, Benoit
2015-02-01
Colloidal semiconductor quantum dots are fluorescent nanocrystals exhibiting exceptional optical properties, but their emission intensity strongly depends on their charging state and local environment. This leads to blinking at the single-particle level or even complete fluorescence quenching, and limits the applications of quantum dots as fluorescent particles. Here, we show that a single quantum dot encapsulated in a silica shell coated with a continuous gold nanoshell provides a system with a stable and Poissonian emission at room temperature that is preserved regardless of drastic changes in the local environment. This novel hybrid quantum dot/silica/gold structure behaves as a plasmonic resonator with a strong Purcell factor, in very good agreement with simulations. The gold nanoshell also acts as a shield that protects the quantum dot fluorescence and enhances its resistance to high-power photoexcitation or high-energy electron beams. This plasmonic fluorescent resonator opens the way to a new family of plasmonic nanoemitters with robust optical properties.
Zhang, Che; Xiao, Yumei; Ma, Yongqiang; Li, Baoming; Liu, Zhidan; Lu, Cheng; Liu, Xue; Wei, Yao; Zhu, Zhangbing; Zhang, Yuanhui
2017-09-01
The challenge of controlling algal blooms and reusing algal biomass remain unsolved worldwide. We introduce a facile method to reuse Nannochloropsis biocrude oil (NBO) for the synthesis of nitrogen and sulfur co-doped carbon dots (N-S-C-dots). N-S-C-dots can pass through the heavily thickened wall of mature Arabidopsis thaliana (A. thaliana) guard cells because of high solubility and excellent biocompatibility. N-S-C-dots exhibit multicolor luminescence and could effectively reduce the interference of autofluorescence in plant cells by changing filters. Bioimaging of root tissues reveals that 2 major factors affect the transmission of N-S-C-dots: high osmotic pressure and intensity of cellular metabolism. This study highlights the potential application of CDs for bioimaging in plant cells and demonstrates the significance of investigating the reuse of algal biomass. Copyright © 2017. Published by Elsevier B.V.
Effects of multiple organic ligands on size uniformity and optical properties of ZnSe quantum dots
DOE Office of Scientific and Technical Information (OSTI.GOV)
Archana, J., E-mail: archana.jayaram@yahoo.com; Navaneethan, M.; Hayakawa, Y.
2012-08-15
Highlights: ► Highly monodispersed ZnSe quantum dots have been synthesized by wet chemical route. ► Strong quantum confinement effect have been observed in ∼ 4 nm ZnSe quantum dots. ► Enhanced ultraviolet near band emission have been obtained using long chain polymer. -- Abstract: The effects of multi-ligands on the formation and optical transitions of ZnSe quantum dots have been investigated. The dots are synthesized using 3-mercapto-1,2-propanediol and polyvinylpyrrolidone ligands, and have been characterized by X-ray diffraction, transmission electron microscopy (TEM), UV–visible absorption spectroscopy, photoluminescence spectroscopy, and Fourier transform infrared spectroscopy. TEM reveals high monodispersion with an average size ofmore » 4 nm. Polymer-stabilized, organic ligand-passivated ZnSe quantum dots exhibit strong UV emission at 326 nm and strong quantum confinement in the UV–visible absorption spectrum. Uniform size and suppressed surface trap emission are observed when the polymer ligand is used. The possible growth mechanism is discussed.« less
NASA Astrophysics Data System (ADS)
Hu, Lilei; Mandelis, Andreas; Melnikov, Alexander; Lan, Xinzheng; Hoogland, Sjoerd; Sargent, Edward H.
2017-01-01
Solution-processed colloidal quantum dots (CQDs) are promising materials for realizing low-cost, large-area, and flexible photovoltaic devices. The study of charge carrier transport in quantum dot solids is essential for understanding energy conversion mechanisms. Recently, solution-processed two-layer oleic-acid-capped PbS CQD solar cells with one layer treated with tetrabutylammonium iodide (TBAI) serving as the main light-absorbing layer and the other treated with 1,2-ethanedithiol (EDT) acting as an electron-blocking/hole-extraction layer were reported. These solar cells demonstrated a significant improvement in power conversion efficiency of 8.55% and long-term air stability. Coupled with photocarrier radiometry measurements, this work used a new trap-state mediated exciton hopping transport model, specifically for CQD thin films, to unveil and quantify exciton transport mechanisms through the extraction of hopping transport parameters including exciton lifetimes, hopping diffusivity, exciton detrapping time, and trap-state density. It is shown that PbS-TBAI has higher trap-state density than PbS-EDT that results in higher PbS-EDT exciton lifetimes. Hopping diffusivities of both CQD thin film types show similar temperature dependence, particularly higher temperatures yield higher hopping diffusivity. The higher diffusivity of PbS-TBAI compared with PbS-EDT indicates that PbS-TBAI is a much better photovoltaic material than PbS-EDT. Furthermore, PCR temperature spectra and deep-level photothermal spectroscopy provided additional insights to CQD surface trap states: PbS-TBAI thin films exhibit a single dominant trap level, while PbS-EDT films with lower trap-state densities show multiple trap levels.
NASA Astrophysics Data System (ADS)
McLeod, A. F.; Gritschneder, M.; Dale, J. E.; Ginsburg, A.; Klaassen, P. D.; Mottram, J. C.; Preibisch, T.; Ramsay, S.; Reiter, M.; Testi, L.
2016-11-01
We present an analysis of the effect of feedback from O- and B-type stars with data from the integral field spectrograph Multi Unit Spectroscopic Explorer (MUSE) mounted on the Very Large Telescope of pillar-like structures in the Carina Nebular Complex, one of the most massive star-forming regions in the Galaxy. For the observed pillars, we compute gas electron densities and temperatures maps, produce integrated line and velocity maps of the ionized gas, study the ionization fronts at the pillar tips, analyse the properties of the single regions, and detect two ionized jets originating from two distinct pillar tips. For each pillar tip, we determine the incident ionizing photon flux Q0, pil originating from the nearby massive O- and B-type stars and compute the mass-loss rate dot{M} of the pillar tips due to photoevaporation caused by the incident ionizing radiation. We combine the results of the Carina data set with archival MUSE data of a pillar in NGC 3603 and with previously published MUSE data of the Pillars of Creation in M16, and with a total of 10 analysed pillars, find tight correlations between the ionizing photon flux and the electron density, the electron density and the distance from the ionizing sources, and the ionizing photon flux and the mass-loss rate. The combined MUSE data sets of pillars in regions with different physical conditions and stellar content therefore yield an empirical quantification of the feedback effects of ionizing radiation. In agreement with models, we find that dot{M}∝ Q_0,pil^{1/2}.
Temperature dependence of spectral linewidth of InAs/InP quantum dot distributed feedback lasers
NASA Astrophysics Data System (ADS)
Duan, J.; Huang, H.; Schires, K.; Poole, P. J.; Wang, C.; Grillot, F.
2018-02-01
In this paper, we investigate the temperature dependence of spectral linewidth of InAs/InP quantum dot distributed feedback lasers. In comparison with their quantum well counterparts, results show that quantum dot lasers have spectral linewidths rather insensitive to the temperature with minimum values below 200 kHz in the range of 283K to 303K. The experimental results are also well confirmed by numerical simulations. Overall, this work shows that quantum dot lasers are excellent candidates for various applications such as coherent communication systems, high-resolution spectroscopy, high purity photonic microwave generation and on-chip atomic clocks.
Byvank, T.; Banasek, J. T.; Potter, W. M.; ...
2017-12-07
We experimentally measure the effects of an applied axial magnetic field (B z) on laboratory plasma jets and compare experimental results with numerical simulations using an extended magnetohydrodynamics code. A 1 MA peak current, 100 ns rise time pulse power machine is used to generate the plasma jet. On application of the axial field, we observe on-axis density hollowing and a conical formation of the jet using interferometry, compression of the applied B z using magnetic B-dot probes, and azimuthal rotation of the jet using Thomson scattering. Experimentally, we find densities ≤ 5×10 17 cm -3 on-axis relative to jetmore » densities of ≥ 3×10 18 cm -3. For aluminum jets, 6.5 ± 0.5 mm above the foil, we find on-axis compression of the applied 1.0 ± 0.1 T B z to a total 2.4 ± 0.3 T, while simulations predict a peak compression to a total 3.4 T at the same location. On the aluminum jet boundary, we find ion azimuthal rotation velocities of 15-20 km/s, while simulations predict 14 km/s at the density peak. We discuss possible sources of discrepancy between the experiments and simulations, including: surface plasma on B-dot probes, optical fiber spatial resolution, simulation density floors, and 2D vs. 3D simulation effects. Lastly, this quantitative comparison between experiments and numerical simulations helps elucidate the underlying physics that determine the plasma dynamics of magnetized plasma jets.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Byvank, T.; Banasek, J. T.; Potter, W. M.
We experimentally measure the effects of an applied axial magnetic field (B z) on laboratory plasma jets and compare experimental results with numerical simulations using an extended magnetohydrodynamics code. A 1 MA peak current, 100 ns rise time pulse power machine is used to generate the plasma jet. On application of the axial field, we observe on-axis density hollowing and a conical formation of the jet using interferometry, compression of the applied B z using magnetic B-dot probes, and azimuthal rotation of the jet using Thomson scattering. Experimentally, we find densities ≤ 5×10 17 cm -3 on-axis relative to jetmore » densities of ≥ 3×10 18 cm -3. For aluminum jets, 6.5 ± 0.5 mm above the foil, we find on-axis compression of the applied 1.0 ± 0.1 T B z to a total 2.4 ± 0.3 T, while simulations predict a peak compression to a total 3.4 T at the same location. On the aluminum jet boundary, we find ion azimuthal rotation velocities of 15-20 km/s, while simulations predict 14 km/s at the density peak. We discuss possible sources of discrepancy between the experiments and simulations, including: surface plasma on B-dot probes, optical fiber spatial resolution, simulation density floors, and 2D vs. 3D simulation effects. Lastly, this quantitative comparison between experiments and numerical simulations helps elucidate the underlying physics that determine the plasma dynamics of magnetized plasma jets.« less
Mn-doped Ge self-assembled quantum dots via dewetting of thin films
NASA Astrophysics Data System (ADS)
Aouassa, Mansour; Jadli, Imen; Bandyopadhyay, Anup; Kim, Sung Kyu; Karaman, Ibrahim; Lee, Jeong Yong
2017-03-01
In this study, we demonstrate an original elaboration route for producing a Mn-doped Ge self-assembled quantum dots on SiO2 thin layer for MOS structure. These magnetic quantum dots are elaborated using dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing at high temperature of an amorphous Ge:Mn (Mn: 40%) nanolayer deposed at very low temperature by high-precision Solid Source Molecular Beam Epitaxy on SiO2 thin film. The size of quantum dots is controlled with nanometer scale precision by varying the nominal thickness of amorphous film initially deposed. The magnetic properties of the quantum-dots layer have been investigated by superconducting quantum interference device (SQUID) magnetometry. Atomic force microscopy (AFM), x-ray energy dispersive spectroscopy (XEDS) and transmission electron microscopy (TEM) were used to examine the nanostructure of these materials. Obtained results indicate that GeMn QDs are crystalline, monodisperse and exhibit a ferromagnetic behavior with a Curie temperature (TC) above room temperature. They could be integrated into spintronic technology.
NASA Astrophysics Data System (ADS)
Syed, Asad; Ahmad, Absar
2013-04-01
The growing demand for semiconductor [quantum dots (Q-dots)] nanoparticles has fuelled significant research in developing strategies for their synthesis and characterization. They are extensively investigated by the chemical route; on the other hand, use of microbial sources for biosynthesis witnessed the highly stable, water dispersible nanoparticles formation. Here we report, for the first time, an efficient fungal-mediated synthesis of highly fluorescent CdTe quantum dots at ambient conditions by the fungus Fusarium oxysporum when reacted with a mixture of CdCl2 and TeCl4. Characterization of these biosynthesized nanoparticles was carried out by different techniques such as Ultraviolet-visible (UV-Vis) spectroscopy, Photoluminescence (PL), X-ray Diffraction (XRD), X-ray Photoelectron spectroscopy (XPS), Transmission Electron Microscopy (TEM) and Fourier Transformed Infrared Spectroscopy (FTIR) analysis. CdTe nanoparticles shows antibacterial activity against Gram positive and Gram negative bacteria. The fungal based fabrication provides an economical, green chemistry approach for production of highly fluorescent CdTe quantum dots.
Ke, Ching-Bin; Lu, Te-Ling; Chen, Jian-Lian
2018-05-26
Oxygen and nitrogen capacitively coupled plasma (CCP) was used to irradiate mixtures of aliphatic acids in high boiling point solvents to synthesize fluorescent carbon dots (C-dots). With a high fluorescence intensity, the C-dots obtained from the O₂/CCP radiation of a 1-ethyl-3-methylimidazolium dicyanamide ionic liquid solution of citric acid were characterized with an average diameter of 8.6 nm (σ = 1.1 nm), nitrogen and oxygen bonding functionalities, excitation-independent emissions, and upconversion fluorescence. Through dialysis of the CCP-treated C-dots, two emissive surface states corresponding to their respective functionalities and emissions were identified. The fluorescence spectrum of the CCP-treated C-dots was different from that of the microwave irradiation and possessed higher intensity than that of hydrothermal pyrolysis. By evaluation of the fluorescence quenching effect on flavonoids and metal ions, the CCP-treated C-dots showed a high selectivity for quercetin and sensitivity to Hg 2+ . Based on the Perrin model, a calibration curve ( R ² = 0.9992) was established for quercetin ranging from 2.4 μM to 119 μM with an LOD (limit of detection) = 0.5 μM. The quercetin in the ethanol extract of the sun-dried peel of Citrus reticulata cv. Chachiensis was determined by a standard addition method to be 4.20 ± 0.15 mg/g with a matrix effect of 8.16%.
Andreev molecules in semiconductor nanowire double quantum dots.
Su, Zhaoen; Tacla, Alexandre B; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Daley, Andrew J; Pekker, David; Frolov, Sergey M
2017-09-19
Chains of quantum dots coupled to superconductors are promising for the realization of the Kitaev model of a topological superconductor. While individual superconducting quantum dots have been explored, control of longer chains requires understanding of interdot coupling. Here, double quantum dots are defined by gate voltages in indium antimonide nanowires. High transparency superconducting niobium titanium nitride contacts are made to each of the dots in order to induce superconductivity, as well as probe electron transport. Andreev bound states induced on each of dots hybridize to define Andreev molecular states. The evolution of these states is studied as a function of charge parity on the dots, and in magnetic field. The experiments are found in agreement with a numerical model.Quantum dots in a nanowire are one possible approach to creating a solid-state quantum simulator. Here, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andreev molecule states; a potential building block for longer chains suitable for quantum simulation.
NASA Astrophysics Data System (ADS)
Lin, Yen-Hsiang; Walrath, Jenna; Huang, Simon; Goldman, Rachel
2014-03-01
Thermoelectric (TE) devices offer a method of recovering waste heat through solid state conversion of heat to electricity. However, the typical efficiencies of TE devices are 5-10% which constitutes a barrier to wide spread use. There have recently been a number of reports of an increase in the bulk thermopower due to nanostructuring. In addition to our recent report of enhanced thermopower for GaAs embedded with indium nanocrystals, a theoretical study by Mahan and Sofo suggested that the best thermoelectric materials have a delta function density of states. Quantum dots fit ideally into such a picture. To date, the influence of nanostructuring on the electronic LDOS and thermopower has been studied using spatially averaged measurements; a nanoscale investigation of the effects of nanostructures on thermopower has yet to be presented. To investigate the link between dimensionality and TE properties, we are examining structures ranging from QDs to bulk-like layers, comparing SThEM measurements of the local Seebeck coefficient, S, with STS measurements of the local density of states (LDOS). STM, STS, and SThEM performed on InAs quantum dots (QDs) grown on GaAs. SThEM reveals enhanced S-values near the QD edge; STS reveals band-bending at the QD/GaAs interface, suggesting that the S enhancement is due to interfacial charge accumulation.
Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering.
Pan, Jun; Quan, Li Na; Zhao, Yongbiao; Peng, Wei; Murali, Banavoth; Sarmah, Smritakshi P; Yuan, Mingjian; Sinatra, Lutfan; Alyami, Noktan M; Liu, Jiakai; Yassitepe, Emre; Yang, Zhenyu; Voznyy, Oleksandr; Comin, Riccardo; Hedhili, Mohamed N; Mohammed, Omar F; Lu, Zheng Hong; Kim, Dong Ha; Sargent, Edward H; Bakr, Osman M
2016-10-01
A two-step ligand-exchange strategy is developed, in which the long-carbon- chain ligands on all-inorganic perovskite (CsPbX 3 , X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-pair-capped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Correlation of wave propagation modes in helicon plasma with source tube lengths
NASA Astrophysics Data System (ADS)
Niu, Chen; Zhao, Gao; Wang, Yu; Liu, Zhongwei; Chen, Qiang
2017-01-01
Helicon wave plasma demonstrates lots of advantages in high coupling efficiency, high density, and low magnetic field. However, the helicon wave plasma still meets challenges in applications of material deposition, surface treatment, and electromagnetic thrusters owing to the changeable coupled efficiency and the remarkable non-uniformity. In this paper, we explore the wave propagation characterization by the B-dot probe in various lengths of source tubes. We find that in a long source tube the standing wave appears under the antenna zone, while the traveling wave is formed out of the antenna region. The apparent modulation of wave amplitude is formed in upstream rather than in downstream of the antenna. In a short source tube, however, there is only standing wave propagation.
Novel nitrogen doped carbon dots for corrosion inhibition of carbon steel in 1 M HCl solution
NASA Astrophysics Data System (ADS)
Cui, Mingjun; Ren, Siming; Zhao, Haichao; Wang, Liping; Xue, Qunji
2018-06-01
Nitrogen doped carbon dots (NCDs) were synthesized and used for inhibiting the corrosion of Q235 carbon steel in hydrochloric acid (HCl) solution. Inhibition effectiveness in short- and long-term immersion was examined using electrochemical measurements, weight loss and surface analysis. Results revealed the inhibition efficiency was improved significantly after adding NCDs and strongly dependent on the concentration of NCDs. SVET results showed that the sample immersed in HCl solution with NCDs showed lower anodic current density mapping than that in blank HCl solution. According to the data extracted from the Langmuir adsorption, the absorption of NCDs involved both chemisorption and physisorption.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Arciprete, F.; Placidi, E.; Sessi, V.
2006-07-24
The two- to three-dimensional growth mode transition in the InAs/GaAs(001) heterostructure has been investigated by means of atomic force microscopy. The kinetics of the density of three-dimensional islands indicates two transition onsets at 1.45 and 1.59 ML of InAs coverage, corresponding to two separate families, small and large dots. According to the scaling analysis and volume measurements, the transition between the two families of quantum dots and the explosive nucleation of the large ones is triggered by the erosion of the step edges.
NASA Astrophysics Data System (ADS)
Gudmundsson, Vidar; Abdullah, Nzar Rauf; Sitek, Anna; Goan, Hsi-Sheng; Tang, Chi-Shung; Manolescu, Andrei
2018-06-01
We calculate the current correlations for the steady-state electron transport through multi-level parallel quantum dots embedded in a short quantum wire, that is placed in a non-perfect photon cavity. We account for the electron-electron Coulomb interaction, and the para- and diamagnetic electron-photon interactions with a stepwise scheme of configuration interactions and truncation of the many-body Fock spaces. In the spectral density of the temporal current-current correlations we identify all the transitions, radiative and non-radiative, active in the system in order to maintain the steady state. We observe strong signs of two types of Rabi oscillations.
Constructiveness and destructiveness of temperature in asymmetric quantum pseudo dot qubit system
NASA Astrophysics Data System (ADS)
Chen, Ying-Jie; Song, Hai-Tao; Xiao, Jing-Lin
2018-06-01
By using the variational method of the Pekar type, we theoretically study the temperature effects on the asymmetric quantum pseudo dot qubit with a pseudoharmonic potential under an electromagnetic field. The numerical results are analyzed and discussed in detail and show that the relationships of the ground and first excited state energies, the electron oscillation period and the electron probability density in the superposition state of the ground state and the first-excited state with the temperature, the chemical potential, the pseudoharmonic potential, the electric field strength, the cyclotron frequency, the electron phonon coupling constant, the transverse and longitudinal effective confinement length, respectively.
NASA Astrophysics Data System (ADS)
Zhou, Ru; Niu, Haihong; Ji, Fengwei; Wan, Lei; Mao, Xiaoli; Guo, Huier; Xu, Jinzhang; Cao, Guozhong
2016-11-01
PbS is a promising light harvester for near-infrared (NIR) responsive quantum dot (QD) photovoltaics due to its narrow bulk band gap (0.41 eV) and large exciton Bohr radius (18 nm). However, the relatively low conduction band (CB) and high-density surface defects of PbS as two major drawbacks for its use in solar cells severely hamper the photovoltaic performance enhancement. In this work, a modified solution-based successive ionic layer adsorption and reaction (SILAR) utilizing mixed cationic precursors of Pb2+ and Cd2+ is explored, and such a scheme offers two benefits, band-structure tailoring and surface passivation. In-situ deposited CdS suppresses the excessive growth of PbS in the mesopores, thereby facilitating the favorable electron injection from PbS to TiO2 in view of the up-shifted CB level of QDs; the intimate interpenetration of two sulfides with each other leads to superior passivation of trap state defects on PbS, which suppresses the interfacial charge recombination. With the construction of photovoltaics based on such a hybrid (Pb,Cd)S/CdS configuration, impressive power conversion efficiency up to 4.08% has been reached, outperforming that of the conventional PbS/CdS pattern (2.95%). This work highlights the great importance of band-structure tailoring and surface passivation for constructing highly efficient PbS QD photovoltaics.
Optical properties of InAs/GaAs quantum dot superlattice structures
NASA Astrophysics Data System (ADS)
Imran, Ali; Jiang, Jianliang; Eric, Deborah; Zahid, M. Noaman; Yousaf, M.; Shah, Z. H.
2018-06-01
Quantum dot (QD) structure has potential applications in modern highly efficient optoelectronic devices due to their band-tuning. The device dimensions have been miniatured with increased efficiencies by virtue of this discovery. In this research, we have presented modified analytical and simulation results of InAs/GaAs QD superlattice (QDSL). We have applied tight binding model for the investigation of ground state energies using timeindependent Schrödinger equation (SE) with effective mass approximation. It has been investigated that the electron energies are confined due to wave function delocalization in closely coupled QD structures. The minimum ground state energy can be obtained by increasing the periodicity and decreasing the barrier layer thickness. We have calculated electronics and optical properties which includes ground state energies, transition energies, density of states (DOS), absorption coefficient and refractive index, which can be tuned by structure modification. In our results, the minimum ground state energy of QDSL is achieved to be 0.25 eV with a maximum period of 10 QDs. The minimum band to band and band to continuum transition energies are 63 meV and 130 meV with 2 nm barrier layer thickness respectively. The absorption coefficient of our proposed QDSL model is found to be maximum 1.2 × 104 cm-1 and can be used for highly sensitive infrared detector and high efficiency solar cells.
An InN/InGaN Quantum Dot Electrochemical Biosensor for Clinical Diagnosis
Alvi, Naveed ul Hassan; Gómez, Victor J.; Rodriguez, Paul E.D. Soto; Kumar, Praveen; Zaman, Saima; Willander, Magnus; Nötzel, Richard
2013-01-01
Low-dimensional InN/InGaN quantum dots (QDs) are demonstrated for realizing highly sensitive and efficient potentiometric biosensors owing to their unique electronic properties. The InN QDs are biochemically functionalized. The fabricated biosensor exhibits high sensitivity of 97 mV/decade with fast output response within two seconds for the detection of cholesterol in the logarithmic concentration range of 1 × 10−6 M to 1 × 10−3 M. The selectivity and reusability of the biosensor are excellent and it shows negligible response to common interferents such as uric acid and ascorbic acid. We also compare the biosensing properties of the InN QDs with those of an InN thin film having the same surface properties, i.e., high density of surface donor states, but different morphology and electronic properties. The sensitivity of the InN QDs-based biosensor is twice that of the InN thin film-based biosensor, the EMF is three times larger, and the response time is five times shorter. A bare InGaN layer does not produce a stable response. Hence, the superior biosensing properties of the InN QDs are governed by their unique surface properties together with the zero-dimensional electronic properties. Altogether, the InN QDs-based biosensor reveals great potential for clinical diagnosis applications. PMID:24132228
NASA Astrophysics Data System (ADS)
Biswas, Sayantan; Sinha, Amitabha
2017-10-01
An analytical study has been carried out on the InAs/GaAs p+-i-n+ quantum dot solar cell, taking into consideration the contributions of each region of the cell to the total photocurrent. The expressions for the excess minority carrier concentration and photocurrent from the front and the rear regions of the device have been obtained and their variations with different device parameters have been studied. Also, based on the investigations reported by some researchers earlier, the photocurrent contribution from the intrinsic region of the solar has been studied, taking into account the quantum dot ensemble absorption coefficient, which depends significantly on the quantum dot size and size dispersion. It is observed that all the three regions of the cell contribute to the overall internal quantum efficiency (IQE) of the cell. The contribution of each region of the solar cell to the total IQE has been shown graphically. From these studies it is observed that the incorporation of the quantum dots in the intrinsic region enhance the photocurrent density and hence the IQE of such solar cell, as it absorbs low energy photons, which are beyond the absorption range of GaAs. Finally, the fill factor of the solar cell has been calculated.
NASA Astrophysics Data System (ADS)
Cheng, Jian-Yih; Fisher, Brandon L.; Guisinger, Nathan P.; Lilley, Carmen M.
2017-12-01
Providing a spin-free host material in the development of quantum information technology has made silicon a very interesting and desirable material for qubit design. Much of the work and experimental progress has focused on isolated phosphorous atoms. In this article, we report on the exploration of Ni-Si clusters that are atomically manufactured via self-assembly from the bottom-up and behave as isolated quantum dots. These small quantum dot structures are probed at the atomic-scale with scanning tunneling microscopy and spectroscopy, revealing robust resonance through discrete quantized energy levels within the Ni-Si clusters. The resonance energy is reproducible and the peak spacing of the quantum dot structures increases as the number of atoms in the cluster decrease. Probing these quantum dot structures on degenerately doped silicon results in the observation of negative differential resistance in both I-V and dI/dV spectra. At higher surface coverage of nickel, a well-known √19 surface modification is observed and is essentially a tightly packed array of the clusters. Spatial conductance maps reveal variations in the local density of states that suggest the clusters are influencing the electronic properties of their neighbors. All of these results are extremely encouraging towards the utilization of metal modified silicon surfaces to advance or complement existing quantum information technology.
Cheng, Jian -Yih; Fisher, Brandon L.; Guisinger, Nathan P.; ...
2017-05-22
Providing a spin-free host material in the development of quantum information technology has made silicon a very interesting and desirable material for qubit design. Much of the work and experimental progress has focused on isolated phosphorous atoms. In this article, we report on the exploration of Ni–Si clusters that are atomically manufactured via self-assembly from the bottom-up and behave as isolated quantum dots. These small quantum dot structures are probed at the atomic-scale with scanning tunneling microscopy and spectroscopy, revealing robust resonance through discrete quantized energy levels within the Ni–Si clusters. The resonance energy is reproducible and the peak spacingmore » of the quantum dot structures increases as the number of atoms in the cluster decrease. Probing these quantum dot structures on degenerately doped silicon results in the observation of negative differential resistance in both I–V and dI/dV spectra. At higher surface coverage of nickel, a well-known √19 surface modification is observed and is essentially a tightly packed array of the clusters. Spatial conductance maps reveal variations in the local density of states that suggest the clusters are influencing the electronic properties of their neighbors. Furthermore, all of these results are extremely encouraging towards the utilization of metal modified silicon surfaces to advance or complement existing quantum information technology.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Cheng, Jian -Yih; Fisher, Brandon L.; Guisinger, Nathan P.
Providing a spin-free host material in the development of quantum information technology has made silicon a very interesting and desirable material for qubit design. Much of the work and experimental progress has focused on isolated phosphorous atoms. In this article, we report on the exploration of Ni–Si clusters that are atomically manufactured via self-assembly from the bottom-up and behave as isolated quantum dots. These small quantum dot structures are probed at the atomic-scale with scanning tunneling microscopy and spectroscopy, revealing robust resonance through discrete quantized energy levels within the Ni–Si clusters. The resonance energy is reproducible and the peak spacingmore » of the quantum dot structures increases as the number of atoms in the cluster decrease. Probing these quantum dot structures on degenerately doped silicon results in the observation of negative differential resistance in both I–V and dI/dV spectra. At higher surface coverage of nickel, a well-known √19 surface modification is observed and is essentially a tightly packed array of the clusters. Spatial conductance maps reveal variations in the local density of states that suggest the clusters are influencing the electronic properties of their neighbors. Furthermore, all of these results are extremely encouraging towards the utilization of metal modified silicon surfaces to advance or complement existing quantum information technology.« less
NASA Astrophysics Data System (ADS)
Stefanakis, Dimitrios; Philippidis, Aggelos; Sygellou, Labrini; Filippidis, George; Ghanotakis, Demetrios; Anglos, Demetrios
2014-10-01
Two types of highly fluorescent carbon dots (C-dots) were prepared by a single-step procedure based on microwave heating citric acid and 6-aminocaproic acid or citric acid and urea in an aqueous solution. The small size of the isolated carbon dots along with their strong absorption in the UV and their excitation wavelength-dependent fluorescence render them ideal nanomaterials for biomedical applications (imaging and sensing). The structure and properties of the two types of C-dot materials were studied using a series of spectroscopic techniques. The ability of the C-dots to be internalized by HeLa cells was demonstrated via 3-photon fluorescence microscopy imaging.
Graphene quantum dots as enhanced plant growth regulators: effects on coriander and garlic plants.
Chakravarty, Disha; Erande, Manisha B; Late, Dattatray J
2015-10-01
We report investigations on the use of graphene quantum dots for growth enhancement in coriander (Coriandrum sativam L.) and garlic (Allium sativum) plants. The as-received seeds of coriander and garlic were treated with 0.2 mg mL(-1) of graphene quantum dots for 3 h before planting. Graphene quantum dots enhanced the growth rate in coriander and garlic plants, including leaves, roots, shoots, flowers and fruits, when the seeds were treated with graphene quantum dots. Our investigations open up the opportunity to use graphene quantum dots as plant growth regulators that can be used in a variety of other food plants for high yield. © 2015 Society of Chemical Industry.
Biocompatible Quantum Dots for Biological Applications
Rosenthal, Sandra J.; Chang, Jerry C.; Kovtun, Oleg; McBride, James R.; Tomlinson, Ian D.
2011-01-01
Semiconductor quantum dots are quickly becoming a critical diagnostic tool for discerning cellular function at the molecular level. Their high brightness, long-lasting, sizetunable, and narrow luminescence set them apart from conventional fluorescence dyes. Quantum dots are being developed for a variety of biologically oriented applications, including fluorescent assays for drug discovery, disease detection, single protein tracking, and intracellular reporting. This review introduces the science behind quantum dots and describes how they are made biologically compatible. Several applications are also included, illustrating strategies toward target specificity, and are followed by a discussion on the limitations of quantum dot approaches. The article is concluded with a look at the future direction of quantum dots. PMID:21276935
Controlled sub-nanometer tuning of photonic crystal resonator by carbonaceous nano-dots.
Seo, Min-Kyo; Park, Hong-Gyu; Yang, Jin-Kyu; Kim, Ju-Young; Kim, Se-Heon; Lee, Yong-Hee
2008-06-23
We propose and demonstrate a scheme that enables spectral tuning of a photonic crystal high-quality resonant mode, in steps finer than 0.2 nm, via electron beam induced deposition of carbonaceous nano-dots. The position and size of a nano-dot with a diameter of <100 nm are controlled to an accuracy on the order of nanometers. The possibility of selective modal tuning is also demonstrated by placing nano-dots at locations pre-determined by theoretical computation. The lasing threshold of a photonic crystal mode tends to increase when a nano-dot is grown at the point of strong electric field, showing the absorptive nature of the nano-dot.
NASA Astrophysics Data System (ADS)
Durga, Ikkurthi Kanaka; Rao, S. Srinivasa; Reddy, Araveeti Eswar; Gopi, Chandu V. V. M.; Kim, Hee-Je
2018-03-01
Copper sulfide is an important multifunctional semiconductor that has attracted considerable attention owing to its outstanding properties and multiple applications, such as energy storage and electrochemical energy conversion. This paper describes a cost-effective and simple low-temperature solution approach to the preparation of copper sulfide for supercapacitors (SCs) and quantum-dot sensitized solar cells (QDSSCs). X-ray diffraction, X-ray photoelectron spectroscopy, and transmission electron microscopy confirmed that the nickel foam with a coriander leaf like nanostructure had been coated successfully with copper sulfide. As an electrode material for SCs, the CC-3 h showed excellent specific capacitance (5029.28 at 4 A g-1), energy density (169.73 W h kg-1), and superior cycling durability with 107% retention after 2000 cycles. Interestingly, the QDSSCs equipped with CC-2 h and CC-3 h counter electrodes (CEs) exhibited a maximum power conversion efficiency of 2.52% and 3.48%, respectively. The improved performance of the CC-3 h electrode was attributed mainly to the large surface area (which could contribute sufficient electroactive species), good conductivity, and high electrocatalytic activity. Overall, this work delivers novel insights into the use of copper sulfide and offers an important guidelines for the fabrication of next level energy storage and conversion devices.
A high-temperature single-photon source from nanowire quantum dots.
Tribu, Adrien; Sallen, Gregory; Aichele, Thomas; André, Régis; Poizat, Jean-Philippe; Bougerol, Catherine; Tatarenko, Serge; Kheng, Kuntheak
2008-12-01
We present a high-temperature single-photon source based on a quantum dot inside a nanowire. The nanowires were grown by molecular beam epitaxy in the vapor-liquid-solid growth mode. We utilize a two-step process that allows a thin, defect-free ZnSe nanowire to grow on top of a broader, cone-shaped nanowire. Quantum dots are formed by incorporating a narrow zone of CdSe into the nanowire. We observe intense and highly polarized photoluminescence even from a single emitter. Efficient photon antibunching is observed up to 220 K, while conserving a normalized antibunching dip of at most 36%. This is the highest reported temperature for single-photon emission from a nonblinking quantum-dot source and principally allows compact and cheap operation by using Peltier cooling.
Energies and densities of electrons confined in elliptical and ellipsoidal quantum dots
DOE Office of Scientific and Technical Information (OSTI.GOV)
Halder, Avik; Kresin, Vitaly V.
Here, we consider a droplet of electrons confined within an external harmonic potential well of elliptical or ellipsoidal shape, a geometry commonly encountered in work with semiconductor quantum dots and other nanoscale or mesoscale structures. For droplet sizes exceeding the effective Bohr radius, the dominant contribution to average system parameters in the Thomas– Fermi approximation comes from the potential energy terms, which allows us to derive expressions describing the electron droplet’s shape and dimensions, its density, total and capacitive energy, and chemical potential. Our analytical results are in very good agreement with experimental data and numerical calculations, and make itmore » possible to follow the dependence of the properties of the system on its parameters (the total number of electrons, the axial ratios and curvatures of the confinement potential, and the dielectric constant of the material). One interesting feature is that the eccentricity of the electron droplet is not the same as that of its confining potential well.« less
Energies and densities of electrons confined in elliptical and ellipsoidal quantum dots
Halder, Avik; Kresin, Vitaly V.
2016-08-09
Here, we consider a droplet of electrons confined within an external harmonic potential well of elliptical or ellipsoidal shape, a geometry commonly encountered in work with semiconductor quantum dots and other nanoscale or mesoscale structures. For droplet sizes exceeding the effective Bohr radius, the dominant contribution to average system parameters in the Thomas– Fermi approximation comes from the potential energy terms, which allows us to derive expressions describing the electron droplet’s shape and dimensions, its density, total and capacitive energy, and chemical potential. Our analytical results are in very good agreement with experimental data and numerical calculations, and make itmore » possible to follow the dependence of the properties of the system on its parameters (the total number of electrons, the axial ratios and curvatures of the confinement potential, and the dielectric constant of the material). One interesting feature is that the eccentricity of the electron droplet is not the same as that of its confining potential well.« less
Waste Characterization Process
DOE Office of Scientific and Technical Information (OSTI.GOV)
Lambert, Patrick E.
2014-11-01
The purpose is to provide guidance to the Radiological Characterization Reviewer to complete the radiological characterization of waste items. This information is used for Department of Transportation (DOT) shipping and disposal, typically at the Nevada National Security Site (NNSS). Complete characterization ensures compliance with DOT shipping laws and NNSS Waste Acceptance Criteria (WAC). The fines for noncompliance can be extreme. This does not include possible bad press, and endangerment to the public, employees and the environment. A Radiological Characterization Reviewer has an important role in the organization. The scope is to outline the characterization process, but does not to includemore » every possible situation. The Radiological Characterization Reviewer position requires a strong background in Health Physics; therefore, these concepts are minimally addressed. The characterization process includes many Excel spreadsheets that were developed by Michael Enghauser known as the WCT software suite. New Excel spreadsheets developed as part of this project include the Ra- 226 Decider and the Density Calculator by Jesse Bland, MicroShield Density Calculator and Molecular Weight Calculator by Pat Lambert.« less
The impacts of the quantum-dot confining potential on the spin-orbit effect.
Li, Rui; Liu, Zhi-Hai; Wu, Yidong; Liu, C S
2018-05-09
For a nanowire quantum dot with the confining potential modeled by both the infinite and the finite square wells, we obtain exactly the energy spectrum and the wave functions in the strong spin-orbit coupling regime. We find that regardless of how small the well height is, there are at least two bound states in the finite square well: one has the σ x [Formula: see text] = -1 symmetry and the other has the σ x [Formula: see text] = 1 symmetry. When the well height is slowly tuned from large to small, the position of the maximal probability density of the first excited state moves from the center to x ≠ 0, while the position of the maximal probability density of the ground state is always at the center. A strong enhancement of the spin-orbit effect is demonstrated by tuning the well height. In particular, there exists a critical height [Formula: see text], at which the spin-orbit effect is enhanced to maximal.
Optical graphene quantum dots gas sensors: Theoretical study
NASA Astrophysics Data System (ADS)
Raeyani, D.; Shojaei, S.; Ahmadi-Kandjani, S.
2018-02-01
In this work, we theoretically studied the changes of graphene quantum dots (GQD) absorption spectra under the influence of different gases to indicate optical gas sensing features of GQDs. The adsorption of gas molecules such as CO2, N2 and Ar on GQDs have been theoretically investigated through time-dependent density functional theory (TDDFT) calculations. Our study revealed that UV-Vis absorption spectrum of GQDs in the presence of CO2 undergoes considerable changes than that of N2 and Ar. The shift of maximum absorption wavelength for adsorption of CO2, N2 and Ar in same distance from GQD in addition to density of state (DOS) and orbital analyses have been obtained. To verify our theoretical results, comparison with experimental study has been done and good agreement has been observed. Comparing with electrical property of GQD, optical properties showed an efficient tool to be implemented in gas adsorption and paves the way towards GQD optical gas sensors.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kurzmann, A., E-mail: annika.kurzmann@uni-due.de; Beckel, A.; Lorke, A.
2015-02-07
We have investigated the influence of a layer of charged self-assembled quantum dots (QDs) on the mobility of a nearby two-dimensional electron gas (2DEG). Time-resolved transconductance spectroscopy was used to separate the two contributions of the change in mobility, which are: (i) The electrons in the QDs act as Coulomb scatterers for the electrons in the 2DEG. (ii) The screening ability and, hence, the mobility of the 2DEG decreases when the charge carrier density is reduced by the charged QDs, i.e., the mobility itself depends on the charge carrier concentration. Surprisingly, we find a negligible influence of the Coulomb scatteringmore » on the mobility for a 2DEG, separated by a 30 nm tunneling barrier to the layer of QDs. This means that the mobility change is completely caused by depletion, i.e., reduction of the charge carrier density in the 2DEG, which indirectly influences the mobility.« less
Quantum-dot spin-photon entanglement via frequency downconversion to telecom wavelength.
De Greve, Kristiaan; Yu, Leo; McMahon, Peter L; Pelc, Jason S; Natarajan, Chandra M; Kim, Na Young; Abe, Eisuke; Maier, Sebastian; Schneider, Christian; Kamp, Martin; Höfling, Sven; Hadfield, Robert H; Forchel, Alfred; Fejer, M M; Yamamoto, Yoshihisa
2012-11-15
Long-distance quantum teleportation and quantum repeater technologies require entanglement between a single matter quantum bit (qubit) and a telecommunications (telecom)-wavelength photonic qubit. Electron spins in III-V semiconductor quantum dots are among the matter qubits that allow for the fastest spin manipulation and photon emission, but entanglement between a single quantum-dot spin qubit and a flying (propagating) photonic qubit has yet to be demonstrated. Moreover, many quantum dots emit single photons at visible to near-infrared wavelengths, where silica fibre losses are so high that long-distance quantum communication protocols become difficult to implement. Here we demonstrate entanglement between an InAs quantum-dot electron spin qubit and a photonic qubit, by frequency downconversion of a spontaneously emitted photon from a singly charged quantum dot to a wavelength of 1,560 nanometres. The use of sub-10-picosecond pulses at a wavelength of 2.2 micrometres in the frequency downconversion process provides the necessary quantum erasure to eliminate which-path information in the photon energy. Together with previously demonstrated indistinguishable single-photon emission at high repetition rates, the present technique advances the III-V semiconductor quantum-dot spin system as a promising platform for long-distance quantum communication.
Li, Na; Liu, Shi Gang; Fan, Yu Zhu; Ju, Yan Jun; Xiao, Na; Luo, Hong Qun; Li, Nian Bing
2018-07-12
The various synthetic routes of carbon dots (C-dots) feature a considerable step toward their potential use in chemical sensors and biotechnology. Herein, by coupling phosphorus and nitrogen element introduction, the adenosine-derived N/P co-doped C-dots with fluorescence enhancement were achieved. By separately employing adenosine, adenosine monophosphate, adenosine diphosphate, and adenosine-5'-triphosphate as precursors, the effect of N/P co-doping on the fluorescence emission is discussed in detail. The formed C-dots with adenosine monophosphate exhibited strong blue fluorescence with a high quantum yield of 33.81%. Then the C-dots were employed as a fluorescent probe and utilized to develop a fast, sensitive, and selective picric acid sensor. The fluorescence of C-dots can be quenched by picric acid immediately, giving rise to a picric acid determination down to 30 nM. The possible mechanism of fluorescence quenching was discussed, which was proved to be inner filter effect and static quenching. Moreover, this method has the potential to detect picric acid in environmental water samples. Copyright © 2018 Elsevier B.V. All rights reserved.
Photovoltaic Ge/Si quantum dot detectors operating in the mid-wave atmospheric window (3 to 5 μm)
2012-01-01
Ge/Si quantum dots fabricated by molecular-beam epitaxy at 500°C are overgrown with Si at different temperatures Tcap, and effect of boron delta doping of Si barriers on the mid-infrared photoresponse was investigated. The photocurrent maximum shifts from 2.3 to 3.9 μm with increasing Tcapfrom 300°C to 750°C. Within the sample set, we examined devices with different positions of the δ-doping layer with respect to the dot plane, different distances between the δ-doping layer and the dot plane d, and different doping densities pB. All detectors show pronounced photovoltaic behavior implying the presence of an internal inversion asymmetry due to the placing dopants in the barriers. The best performance was achieved for the device with Tcap = 600°C, pB = 12 × 1011cm−2, and d = 5 nm in a photovoltaic regime. At a sample temperature of 90 K and no applied bias, a responsivity of 0.83 mA/W and detectivity of 8 × 1010 cm Hz1/2/W at λ = 3.4 μm were measured under normal incidence infrared radiation. PMID:22938028
Low-cost photovoltaics: Luminescent solar concentrators and colloidal quantum dot solar cells
NASA Astrophysics Data System (ADS)
Leow, Shin Woei
Solar energy has long been lauded as an inexhaustible fuel source with more energy reaching the earth's surface in one hour than the global consumption for a year. Although capable of satisfying the world's energy requirements, solar energy remains an expensive technology that has yet to attain grid parity. Another drawback is that existing solar farms require large quantities of land in order to generate power at useful rates. In this work, we look to luminescent solar concentrator systems and quantum dot technology as viable solutions to lowering the cost of solar electricity production with the flexibility to integrate such technologies into buildings to achieve dual land use. Luminescent solar concentrator (LSC) windows with front-facing photovoltaic (PV) cells were built and their gain and power efficiency were investigated. Conventional LSCs employ a photovoltaic (PV) cell that is placed on the edge of the LSC, facing inward. This work describes a new design with the PV cells on the front-face allowing them to receive both direct solar irradiation and wave-guided photons emitted from a dye embedded in an acrylic sheet, which is optically coupled to the PV cells. Parameters investigated include the thickness of the waveguide, edge treatment of the window, cell width, and cell placement. The data allowed us to make projections that aided in designing windows for maximized overall efficiency. A gain in power of 2.2x over the PV cells alone was obtained with PV cell coverage of 5%, and a power conversion efficiency as high as 6.8% was obtained with a PV cell coverage of 31%. Balancing the trade-offs between gain and efficiency, the design with the lowest cost per watt attained a power efficiency of 3.8% and a gain of 1.6x. With the viability of the LSC demonstrated, a weighted Monte-Carlo Ray Tracing program was developed to study the transport of photons and loss mechanisms in the LSC to aid in design optimization. The program imports measured absorption/emission spectra of an organic luminescent dye (LR305), the transmission coefficient and refractive index of acrylic as parameters that describe the system. Simulations suggest that for LR305, 8-10cm of luminescent material surrounding the PV cell yields the highest increase in power gain per unit area of LSC added, thereby determining the ideal spacing between PV cells in the panel. The model also predicts that for different PV cell dimensions, there exists an optimum waveguide thickness which efficiently transports photon collected by the waveguide to the PV cell with minimal loss, and maintains an even distribution of photons across the cell surface. For the case of the 12.5 by 1cm rectangular cells used in this work, the calculated waveguide thickness is 3mm. For larger cells, every 1cm increment in PV cell width should be accompanied by a 0.75mm increase in waveguide thickness to preserve peak performance. In line with the goal of pushing for cost competitive photovoltaics, the last part of this work shifts to the study of colloidal quantum dot solar cells. A combination of low temperature, highly scalable fabrication process and reduced material usage for thin films offers us a means to produce flexible and cheap solar cells. Tagging on to existing work already performed on germanium quantum dot solar cells, additional work was carried out to further characterize the material. The effect of film thickness, nano-particle surface conditions and thermal anneal were investigated. There is evidence to suggest that the quantum dot devices contain high levels of parasitic resistances. Short circuit current densities increase by up to two times with two spin-cast layers compared to four, leading to the conjecture that charge carrier life time is low with high levels of recombination. Annealing to improve carrier mobility produces devices with current densities up to 301microA, a fourfold increase, but output voltages saw a sharp decrease from 0.12V to 0.015V. In tandem with the work on germanium, experiments on silicon quantum dots were also carried out to investigate their viability for use as photovoltaic devices. The stronger bonds formed by silicon hindered the ligand exchange process. Schottky diodes were made via drop casting and displayed a clear photovoltaic effect albeit with very low current densities. Interestingly, an open circuit voltage was observed even when not under illumination and further investigations are ongoing.
Panchal, A K; Rai, D K; Solanki, C S
2011-04-01
Post-deposition annealing of a-Si/SiN(x) multilayer films at different temperature shows varying shift in high frequency (1 MHz) capacitance-voltage (HFCV) characteristics. Various a-Si/SiN(x) multilayer films were deposited using hot wire chemical vapor deposition (HWCVD) and annealed in the temperature range of 800 to 900 degrees C to precipitate Si quantum dots (Si-QD) in a-Si layers. HFCV measurements of the as-deposited and annealed films in metal-insulator-semiconductor (MIS) structures show hysterisis in C-V curves. The hysteresis in the as-deposited films and annealed films is attributed to charge trapping in Si-dangling bonds in a-Si layer and in Si-QD respectively. The charge trapping density in Si-QD increases with temperature while the interface defects density (D(it)) remains constant.
Chen, Jing; Zhang, Xiang; Zhang, Ye; Wang, Wei; Li, Shuya; Wang, Yucai; Hu, Mengyue; Liu, Li; Bi, Hong
2017-10-03
Here we use natural Chinese paprika to prepare a new kind of amphiphilic carbon dot (A-Dot) that exhibits bright, multicolored fluorescence and contains hydrophilic groups as well as lipophilic capsanthin tails on the surface. It is found that the capsanthin tails in a phospholipid-like structure can promote cell internalization of the A-Dots via crossing cell membranes rapidly in an energy-independent fashion. Compared to highly hydrophilic carbon dots (H-Dots), a control sample prepared from the microwave thermolysis of citric acid and ethylenediamine, our synthesized A-Dots can be taken up by CHO, HeLa, and HFF cells more easily. More importantly, we develop a method to calibrate the hydrophilic-lipophilic balance (HLB) values of various kinds of carbon dots (C-Dots). HLB values of A-Dots and H-Dots are determined to be 6.4 and 18.4, respectively. Moreover, we discover that the cellular uptake efficiency of C-Dots is closely related to their HLBs, and the C-Dots with an HLB value of around 6.4 cross the cell membrane easier and faster. As we regulate the HLB value of the A-Dots from 6.4 to 15.3 by removing the capsanthin tails from their surfaces via alkali refluxing, it is found that the refluxed A-Dots can hardly cross HeLa cell membranes. Our work is an essential step toward understanding the importance of regulating the HLB values as well as the surface polarity of the C-Dots for their practical use in bioimaging and also provides a simple but effective way to judge whether the C-Dots in hand are appropriate for cell imaging.
Interaction effects in Aharonov-Bohm-Kondo rings
NASA Astrophysics Data System (ADS)
Komijani, Yashar; Yoshii, Ryosuke; Affleck, Ian
2013-12-01
We study the conductance through an Aharonov-Bohm ring, containing a quantum dot in the Kondo regime in one arm, at finite temperature and arbitrary electronic density. We develop a general method for this calculation based on changing the basis to the screening and nonscreening channels. We show that an unusual term appears in the conductance, involving the connected four-point Green's function of the conduction electrons. However, this term and the terms quadratic in the T matrix can be eliminated at sufficiently low temperatures, leading to an expression for the conductance linear in the Kondo T matrix. Explicit results are given for temperatures that are high compared to the Kondo temperature.
Muralee Gopi, Chandu V. V.; Ravi, Seenu; Rao, S. Srinivasa; Eswar Reddy, Araveeti; Kim, Hee-Je
2017-01-01
Carbon nanotubes (CNT) and metal sulfides have attracted considerable attention owing to their outstanding properties and multiple application areas, such as electrochemical energy conversion and energy storage. Here we describes a cost-effective and facile solution approach to the preparation of metal sulfides (PbS, CuS, CoS, and NiS) grown directly on CNTs, such as CNT/PbS, CNT/CuS, CNT/CoS, and CNT/NiS flexible electrodes for quantum dot-sensitized solar cells (QDSSCs) and supercapacitors (SCs). X-ray photoelectron spectroscopy, X-ray diffraction, and transmission electron microscopy confirmed that the CNT network was covered with high-purity metal sulfide compounds. QDSSCs equipped with the CNT/NiS counter electrode (CE) showed an impressive energy conversion efficiency (η) of 6.41% and remarkable stability. Interestingly, the assembled symmetric CNT/NiS-based polysulfide SC device exhibited a maximal energy density of 35.39 W h kg−1 and superior cycling durability with 98.39% retention after 1,000 cycles compared to the other CNT/metal-sulfides. The elevated performance of the composites was attributed mainly to the good conductivity, high surface area with mesoporous structures and stability of the CNTs and the high electrocatalytic activity of the metal sulfides. Overall, the designed composite CNT/metal-sulfide electrodes offer an important guideline for the development of next level energy conversion and energy storage devices. PMID:28422182
Unraveling aminophosphine redox mechanisms for glovebox-free InP quantum dot syntheses.
Laufersky, Geoffry; Bradley, Siobhan; Frécaut, Elian; Lein, Matthias; Nann, Thomas
2018-05-10
The synthesis of colloidal indium phosphide quantum dots (InP QDs) has always been plagued by difficulties arising from limited P3- sources. Being effectively restricted to the highly pyrophoric tris(trimethylsilyl) phosphine (TMS3P) creates complications for the average chemist and presents a significant risk for industrially scaled reactions. The adaptation of tris(dialkylamino) phosphines for these syntheses has garnered attention, as these new phosphines are much safer and can generate nanoparticles with competitive photoluminescence properties to those from (TMS)3P routes. Until now, the reaction mechanics of this precursor were elusive due to many experimental optimizations, such as the inclusion of a high concentration of zinc salts, being atypical of previous InP syntheses. Herein, we utilize density functional theory calculations to outline a logical reaction mechanism. The aminophosphine precursor is found to require activation by a zinc halide before undergoing a disproportionation reaction to self-reduce this P(iii) material to a P(-iii) source. We use this understanding to adapt this precursor for a two-pot nanoparticle synthesis in a noncoordinating solvent outside of glovebox conditions. This allowed us to generate spherical InP/ZnS nanoparticles possessing fluorescence quantum yields >55% and lifetimes as fast as 48 ns, with tunable emission according to varying zinc halide acidity. The development of high quality and efficient InP QDs with this safer aminophosphine in simple Schlenk environments will enable a broader range of researchers to synthesize these nontoxic materials for a variety of high-value applications.
Jiang, Chengkun; Wu, Hao; Song, Xiaojie; Ma, Xiaojun; Wang, Jihui; Tan, Mingqian
2014-09-01
The presence of the carbon dots (C-dots) in food is a hotly debated topic and our knowledge about the presence and the use of carbon dots (C-dots) in food is still in its infancy. We report the finding of the presence of photoluminescent (PL) C-dots in commercial Nescafe instant coffee. TEM analysis reveals that the extracted C-dots have an average size of 4.4 nm. They were well-dispersed in water and strongly photoluminescent under the excitation of ultra-violet light with a quantum yield (QY) about 5.5%, which were also found to possess clear upconversion PL properties. X-ray photoelectron spectroscopy characterization demonstrates that the C-dots contain C, O and N three elements with the relative contents ca. 30.1, 62.2 and 7.8%. The X-ray diffraction (XRD) analysis indicates that the C-dots are amorphous. Fourier-transform infrared (FTIR) spectra were employed to characterize the surface groups of the C-dots. The C-dots show a pH independent behavior by varying the pH value from 2 to 11. The cytotoxicity study revealed that the C-dots did not cause any toxicity to cells at a concentration as high as 20 mg/mL. The C-dots have been directly applied in cells and fish imaging, which suggested that the C-dots present in commercial coffee may have more potential biological applications. Copyright © 2014. Published by Elsevier B.V.
Size and shape dependent optical properties of InAs quantum dots
NASA Astrophysics Data System (ADS)
Imran, Ali; Jiang, Jianliang; Eric, Deborah; Yousaf, Muhammad
2018-01-01
In this study Electronic states and optical properties of self assembled InAs quantum dots embedded in GaAs matrix have been investigated. Their carrier confinement energies for single quantum dot are calculated by time-independent Schrödinger equation in which hamiltonianian of the system is based on effective mass approximation and position dependent electron momentum. Transition energy, absorption coefficient, refractive index and high frequency dielectric constant for spherical, cylindrical and conical quantum dots with different sizes in different dimensions are calculated. Comparative studies have revealed that size and shape greatly affect the electronic transition energies and absorption coefficient. Peaks of absorption coefficients have been found to be highly shape dependent.
NASA Technical Reports Server (NTRS)
Khazanov, G. V.; Gamayunov, K. V.; Gallagher, D. L.
2006-01-01
This paper is dedicated to further presentations and discussions of the results from our new global self-consistent theoretical model of interacting ring current ions and electromagnetic ion cyclotron waves [Khazanov et al., 2006; here referred to as Paper 1]. In order to adequately take into account the wave propagation and refraction in a multi-ion plasmasphere, we explicitly include the ray tracing equations in our previous self-consistent model and use the general form of the wave kinetic equation [for details see Paper 1]. To demonstrate the effects of the EMIC wave propagation and refraction on the RC proton precipitations and heating of the thermal plasmaspheric electrons we simulate the May 1998 storm. The main findings of our simulation can be summarized as follows. Firstly, the wave induced precipitations have a quite fine structure, and are highly organized by location of the plasmapause gradient. The strongest fluxes of about 4 (raised dot) 10(exp 6) [(cm (raised dot) s (raised dot) sr)(sup -l)] are observed during the main and early recovery phases of the storm. The very interesting and probably more important finding is that in a number of cases the most intense precipitating fluxes are not simply connected to the most intense EMIC waves. The character of the EMIC wave power spectral density distribution over the equatorial wave normal angle is an extremely crucial for the effectiveness of the RC ion scattering. Secondly, comparison of the global proton precipitating patterns with the results from other ring current model [Kozyra et al., 1997] reveals that although we observe a qualitative agreement between localizations of the wave induced fluxes in the models, there is no quantitative agreement between the magnitudes of these fluxes. These differences are mainly due to a qualitative difference between the characters of the EMIC wave power spectral density distributions over the equatorial wave normal angle. Finally, the two energy sources to the plasmaspheric electrons are considered; (i) the heat fluxes caused by the EMIC wave energy absorption due to Landau resonance, and (ii) the heat fluxes due to Coulomb energy degradation of the RC o(+) ions. The heat fluxes caused by the EMIC wave energy absorption due to Landau resonance are observed in the postnoon-premidnight MLT sector, and maximize at the magnitude of 10l1 (eV/(cm(sup 2)(raised dot) s) at L=3.25, MLT=22 at 3400 UT after 1 May, 0000 UT. The greatest Coulomb energy deposition rates are about 2 (raised dot) 10(sup 10)(eV/(cm(sup 2)(raised dot) s) and observed during two periods; 32-48 hours, and 76-86 hours after 1 May, 0000 UT. The theoretically derived spatial structure of the thermal electron heating caused by interaction of the RC with plasmasphere is strongly supported by concurrent and conjugate plasma measurements from the plasmasphere, the RC, and the topside ionosphere [Gurgiolo et al., 20051.
Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN
NASA Astrophysics Data System (ADS)
Lund, Cory; Catalano, Massimo; Wang, Luhua; Wurm, Christian; Mates, Thomas; Kim, Moon; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia
2018-02-01
N-polar InN layers were deposited using MOCVD on GaN-on-sapphire templates which were miscut 4° towards the GaN m-direction. For thin layers, quantum dot-like features were spontaneously formed to relieve the strain between the InN and GaN layers. As the thickness was increased, the dots elongated along the step direction before growing outward perpendicular to the step direction and coalescing to form a complete InN layer. XRD reciprocal space maps indicated that the InN films relaxed upon quantum dot formation after nominally 1 nm thick growth, resulting in 5-7 nm tall dots with diameters around 20-50 nm. For thicker layers above 10 nm, high electron mobilities of up to 706 cm2/V s were measured using Hall effect measurements indicating high quality layers.
Configuration Management at NASA
NASA Technical Reports Server (NTRS)
Doreswamy, Rajiv
2013-01-01
NASA programs are characterized by complexity, harsh environments and the fact that we usually have one chance to get it right. Programs last decades and need to accept new hardware and technology as it is developed. We have multiple suppliers and international partners Our challenges are many, our costs are high and our failures are highly visible. CM systems need to be scalable, adaptable to new technology and span the life cycle of the program (30+ years). Multiple Systems, Contractors and Countries added major levels of complexity to the ISS program and CM/DM and Requirements management systems center dot CM Systems need to be designed for long design life center dot Space Station Design started in 1984 center dot Assembly Complete in 2012 center dot Systems were developed on a task basis without an overall system perspective center dot Technology moves faster than a large project office, try to make sure you have a system that can adapt
Green-noise halftoning with dot diffusion
NASA Astrophysics Data System (ADS)
Lippens, Stefaan; Philips, Wilfried
2007-02-01
Dot diffusion is a halftoning technique that is based on the traditional error diffusion concept, but offers a high degree of parallel processing by its block based approach. Traditional dot diffusion however suffers from periodicity artifacts. To limit the visibility of these artifacts, we propose grid diffusion, which applies different class matrices for different blocks. Furthermore, in this paper we will discuss two approaches in the dot diffusion framework to generate green-noise halftone patterns. The first approach is based on output dependent feedback (hysteresis), analogous to the standard green-noise error diffusion techniques. We observe that the resulting halftones are rather coarse and highly dependent on the used dot diffusion class matrices. In the second approach we don't limit the diffusion to the nearest neighbors. This leads to less coarse halftones, compared to the first approach. The drawback is that it can only cope with rather limited cluster sizes. We can reduce these drawbacks by combining the two approaches.
Liu, Fei; Jang, Min-Ho; Ha, Hyun Dong; Kim, Je-Hyung; Cho, Yong-Hoon; Seo, Tae Seok
2013-07-19
Pristine graphene quantum dots and graphene oxide quantum dots are synthesized by chemical exfoliation from the graphite nanoparticles with high uniformity in terms of shape (circle), size (less than 4 nm), and thickness (monolayer). The origin of the blue and green photoluminescence of GQDs and GOQDs is attributed to intrinsic and extrinsic energy states, respectively. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
NASA Astrophysics Data System (ADS)
Biazar, Nooshin; Poursalehi, Reza; Delavari, Hamid
2018-01-01
Synthesis and development of visible active catalysts is an important issue in photocatalytic applications of nanomaterials. TiO2 nanostructures coupled with carbon dots demonstrate a considerable photocatalytic activity in visible wavelengths. Extending optical absorption of a wide band gap semiconductor such as TiO2 with carbon dots is the origin of the visible activity of carbon dots modified semiconductor nanostructures. In addition, carbon dots exhibit high photostability, appropriate electron transport and chemical stability without considerable toxicity or environmental footprints. In this study, optical and structural properties of carbon dots/TiO2 nanostructures prepared via (direct current) DC arc discharge in liquid were investigated. Crystal structure, morphology and optical properties of the samples were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV-visible spectroscopy respectively. SEM images show formation of spherical nanoparticles with an average size of 27 nm. In comparison with pristine TiO2, optical transmission spectrum of carbon dots/TiO2 nanostructures demonstrates an absorption edge at longer wavelengths as well a high optical absorption in visible wavelengths which is significant for visible activity of nanostructures as a photocatalyst. Finally, these results can provide a flexible and versatile pathway for synthesis of carbon dots/oxide semiconductor nanostructures with an appropriate activity under visible light.