High-Power 365 nm UV LED Mercury Arc Lamp Replacement for Photochemistry and Chemical Photolithography.

PubMed

Hölz, K; Lietard, J; Somoza, M M

2017-01-03

Ultraviolet light emitting diodes (UV LEDs) have become widespread in chemical research as highly efficient light sources for photochemistry and photopolymerization. However, in more complex experimental setups requiring highly concentrated light and highly spatially resolved patterning of the light, high-pressure mercury arc lamps are still widely used because they emit intense UV light from a compact arc volume that can be efficiently coupled into optical systems. Advances in the deposition and p -type doping of gallium nitride have recently permitted the manufacture of UV LEDs capable of replacing mercury arc lamps also in these applications. These UV LEDs exceed the spectral radiance of mercury lamps even at the intense I-line at 365 nm. Here we present the successful exchange of a high-pressure mercury arc lamp for a new generation UV LED as a light source in photolithographic chemistry and its use in the fabrication of high-density DNA microarrays. We show that the improved light radiance and efficiency of these LEDs offer substantial practical, economic and ecological advantages, including faster synthesis, lower hardware costs, very long lifetime, an >85-fold reduction in electricity consumption and the elimination of mercury waste and contamination.

Amber light-emitting diode comprising a group III-nitride nanowire active region

DOEpatents

Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

2014-07-22

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

Reduced-droop green III-nitride light-emitting diodes utilizing GaN tunnel junction

NASA Astrophysics Data System (ADS)

Alhassan, Abdullah I.; Young, Erin C.; Alyamani, Ahmed Y.; Albadri, Abdulrahman; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.

2018-04-01

We report the fabrication of low-droop high-efficiency green c-plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n++-GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm2, the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.

Flexible deep-ultraviolet light-emitting diodes for significant improvement of quantum efficiencies by external bending

NASA Astrophysics Data System (ADS)

Shervin, Shahab; Oh, Seung Kyu; Park, Hyun Jung; Lee, Keon-Hwa; Asadirad, Mojtaba; Kim, Seung-Hwan; Kim, Jeomoh; Pouladi, Sara; Lee, Sung-Nam; Li, Xiaohang; Kwak, Joon Seop; Ryou, Jae-Hyun

2018-03-01

We report a new route to improve quantum efficiencies of AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using mechanical flexibility of recently developed bendable thin-film structures. Numerical studies show that electronic band structures of AlGaN heterostructures and resulting optical and electrical characteristics of the devices can be significantly modified by external bending through active control of piezoelectric polarization. Internal quantum efficiency is enhanced higher than three times, when the DUV LEDs are moderately bent with concave curvatures. Furthermore, an efficiency droop at high injection currents is mitigated and turn-on voltage of diodes decreases with the same bending condition. The concept of bendable DUV LEDs with a controlled external strain can provide a new path for high-output-power and high-efficiency devices.

Metasurface integrated high energy efficient and high linearly polarized InGaN/GaN light emitting diode.

PubMed

Wang, Miao; Xu, Fuyang; Lin, Yu; Cao, Bing; Chen, Linghua; Wang, Chinhua; Wang, Jianfeng; Xu, Ke

2017-07-06

We proposed and demonstrated an integrated high energy efficient and high linearly polarized InGaN/GaN green LED grown on (0001) oriented sapphire with combined metasurface polarizing converter and polarizer system. It is different from those conventional polarized light emissions generated with plasmonic metallic grating in which at least 50% high energy loss occurs inherently due to high reflection of the transverse electric (TE) component of an electric field. A reflecting metasurface, with a two dimensional elliptic metal cylinder array (EMCA) that functions as a half-wave plate, was integrated at the bottom of a LED such that the back-reflected TE component, that is otherwise lost by a dielectric/metal bi-layered wire grids (DMBiWG) polarizer on the top emitting surface of the LED, can be converted to desired transverse magnetic (TM) polarized emission after reflecting from the metasurface. This significantly enhances the polarized light emission efficiency. Experimental results show that extraction efficiency of the polarized emission can be increased by 40% on average in a wide angle of ±60° compared to that with the naked bottom of sapphire substrate, or 20% compared to reflecting Al film on the bottom of a sapphire substrate. An extinction ratio (ER) of average value 20 dB within an angle of ±60° can be simultaneously obtained directly from an InGaN/GaN LED. Our results show the possibility of simultaneously achieving a high degree of polarization and high polarization extraction efficiency at the integrated device level. This advances the field of GaN LED toward energy efficiency, multi-functional applications in illumination, display, medicine, and light manipulation.

Numerical Analysis of the Temperature Impact on Performance of GaN-Based 460-nm Light-Emitting Diode.

PubMed

Tawfik, Wael Z; Lee, June Key

2018-03-01

The influence of temperature on the characteristics of a GaN-based 460-nm light-emitting diode (LED) prepared on sapphire substrate was simulated using the SiLENSe and SpeCLED software programs. High temperatures impose negative effects on the performance of GaN-based LEDs. As the temperature increases, electrons acquire higher thermal energies, and therefore LEDs may suffer more from high-current loss mechanisms, which in turn causes a reduction in the radiative recombination rate in the active region. The internal quantum efficiency was reduced by about 24% at a current density of 35 A/cm2, and the electroluminescence spectral peak wavelength was redshifted. The LED operated at 260 K and exhibited its highest light output power of ~317.5 mW at a maximum injection current of 350 mA, compared to 212.2 mW for an LED operated at 400 K. However, increasing temperature does not cause a droop in efficiency under high injection conditions. The peak efficiency at 1 mA of injection current decreases more rapidly by ~15% with increasing temperature from 260 to 400 K than the efficiency at high injection current of 350 mA by ~11%.

III-nitride quantum dots for ultra-efficient solid-state lighting

DOE PAGES

Wierer, Jr., Jonathan J.; Tansu, Nelson; Fischer, Arthur J.; ...

2016-05-23

III-nitride light-emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III-nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD-based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD-based LEDs achieve higher efficiencies at higher currents because of highermore » spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. In conclusion, if constructed properly, III-nitride light-emitting devices with QD active regions have the potential to outperform quantum well light-emitting devices, and enable an era of ultra-efficient solidstate lighting.« less

High efficiency III-nitride light-emitting diodes

DOEpatents

Crawford, Mary; Koleske, Daniel; Cho, Jaehee; Zhu, Di; Noemaun, Ahmed; Schubert, Martin F; Schubert, E. Fred

2013-05-28

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

The High-efficiency LED Driver for Visible Light Communication Applications.

PubMed

Gong, Cihun-Siyong Alex; Lee, Yu-Chen; Lai, Jyun-Liang; Yu, Chueh-Hao; Huang, Li Ren; Yang, Chia-Yen

2016-08-08

This paper presents a LED driver for VLC. The main purpose is to solve the low data rate problem used to be in switching type LED driver. The GaN power device is proposed to replace the traditional silicon power device of switching LED driver for the purpose of increasing switching frequency of converter, thereby increasing the bandwidth of data transmission. To achieve high efficiency, the diode-connected GaN power transistor is utilized to replace the traditional ultrafast recovery diode used to be in switching type LED driver. This work has been experimentally evaluated on 350-mA output current. The results demonstrate that it supports the data of PWM dimming level encoded in the PPM scheme for VLC application. The experimental results also show that system's efficiency of 80.8% can be achieved at 1-Mb/s data rate.

Improved photoluminescence efficiency in UV nanopillar light emitting diode structures by recovery of dry etching damage.

PubMed

Jeon, Dae-Woo; Jang, Lee-Woon; Jeon, Ju-Won; Park, Jae-Woo; Song, Young Ho; Jeon, Seong-Ran; Ju, Jin-Woo; Baek, Jong Hyeob; Lee, In-Hwan

2013-05-01

In this study, we have fabricated 375-nm-wavelength InGaN/AlInGaN nanopillar light emitting diodes (LED) structures on c-plane sapphire. A uniform and highly vertical nanopillar structure was fabricated using self-organized Ni/SiO2 nano-size mask by dry etching method. To minimize the dry etching damage, the samples were subjected to high temperature annealing with subsequent chemical passivation in KOH solution. Prior to annealing and passivation the UV nanopillar LEDs showed the photoluminescence (PL) efficiency about 2.5 times higher than conventional UV LED structures which is attributed to better light extraction efficiency and possibly some improvement of internal quantum efficiency due to partially relieved strain. Annealing alone further increased the PL efficiency by about 4.5 times compared to the conventional UV LEDs, while KOH passivation led to the overall PL efficiency improvement by more than 7 times. Combined results of Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) suggest that annealing decreases the number of lattice defects and relieves the strain in the surface region of the nanopillars whereas KOH treatment removes the surface oxide from nanopillar surface.

Improved InGaN LED System Efficacy and Cost via Droop Reduction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wildeson, Isaac

Efficiency droop is a non-thermal process intrinsic to indium gallium nitride light emitting diodes (LEDs) in which the external quantum efficiency (EQE) decreases with increasing drive current density. Mitigating droop would allow one to reduce the size of LEDs driven at a given current or to drive LEDs of given size at higher current while maintaining high efficiencies. In other words, droop mitigation can lead to significant gains in light output per dollar and/or light output per watt of input power. This project set an EQE improvement goal at high drive current density which was to be attained by improvingmore » the LED active region design and growth process following a droop mitigation strategy. The interactions between LED active region design parameters and efficiency droop were studied by modeling and experiments. The crystal defects that tend to form in more complex LED designs intended to mitigate droop were studied with advanced characterization methods that provided insight into the structural and electronic properties of the material. This insight was applied to improve the epitaxy process both in terms of active region design and optimization of growth parameters. The final project goals were achieved on schedule and an epitaxy process leading to LEDs with EQE exceeding the project target was demonstrated.« less

Efficient perovskite light-emitting diodes featuring nanometre-sized crystallites

NASA Astrophysics Data System (ADS)

Xiao, Zhengguo; Kerner, Ross A.; Zhao, Lianfeng; Tran, Nhu L.; Lee, Kyung Min; Koh, Tae-Wook; Scholes, Gregory D.; Rand, Barry P.

2017-01-01

Organic-inorganic hybrid perovskite materials are emerging as highly attractive semiconductors for use in optoelectronics. In addition to their use in photovoltaics, perovskites are promising for realizing light-emitting diodes (LEDs) due to their high colour purity, low non-radiative recombination rates and tunable bandgap. Here, we report highly efficient perovskite LEDs enabled through the formation of self-assembled, nanometre-sized crystallites. Large-group ammonium halides added to the perovskite precursor solution act as a surfactant that dramatically constrains the growth of 3D perovskite grains during film forming, producing crystallites with dimensions as small as 10 nm and film roughness of less than 1 nm. Coating these nanometre-sized perovskite grains with longer-chain organic cations yields highly efficient emitters, resulting in LEDs that operate with external quantum efficiencies of 10.4% for the methylammonium lead iodide system and 9.3% for the methylammonium lead bromide system, with significantly improved shelf and operational stability.

Side-emitting illuminators using LED sources

NASA Astrophysics Data System (ADS)

Zhao, Feng; Van Derlofske, John F.

2003-11-01

This study investigates illuminators composed of light emitting diode (LED) array sources and side-emitting light guides to provide efficient general illumination. Specifically, new geometries are explored to increase the efficiency of current systems while maintaining desired light distribution. LED technology is already successfully applied in many illumination applications, such as traffic signals and liquid crystal display (LCD) backlighting. It provides energy-efficient, small-package, long-life, and color-adjustable illumination. However, the use of LEDs in general illumination is still in its early stages. Current side-emitting systems typically use a light guide with light sources at one end, an end-cap surface at the other end, and light releasing sidewalls. This geometry introduces efficiency loss that can be as high as 40%. The illuminators analyzed in this study use LED array sources along the longitude of a light guide to increase the system efficiency. These new geometries also provide the freedom of elongating the system without sacrificing system efficiency. In addition, alternative geometries can be used to create white light with monochromatic LED sources. As concluded by this study, the side-emitting illuminators using LED sources gives the possibility of an efficient, distribution-controllable linear lighting system.

High-Efficiency Nitride-Base Photonic Crystal Light Sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

James Speck; Evelyn Hu; Claude Weisbuch

2010-01-31

The research activities performed in the framework of this project represent a major breakthrough in the demonstration of Photonic Crystals (PhC) as a competitive technology for LEDs with high light extraction efficiency. The goals of the project were to explore the viable approaches to manufacturability of PhC LEDS through proven standard industrial processes, establish the limits of light extraction by various concepts of PhC LEDs, and determine the possible advantages of PhC LEDs over current and forthcoming LED extraction concepts. We have developed three very different geometries for PhC light extraction in LEDs. In addition, we have demonstrated reliable methodsmore » for their in-depth analysis allowing the extraction of important parameters such as light extraction efficiency, modal extraction length, directionality, internal and external quantum efficiency. The information gained allows better understanding of the physical processes and the effect of the design parameters on the light directionality and extraction efficiency. As a result, we produced LEDs with controllable emission directionality and a state of the art extraction efficiency that goes up to 94%. Those devices are based on embedded air-gap PhC - a novel technology concept developed in the framework of this project. They rely on a simple and planar fabrication process that is very interesting for industrial implementation due to its robustness and scalability. In fact, besides the additional patterning and regrowth steps, the process is identical as that for standard industrially used p-side-up LEDs. The final devices exhibit the same good electrical characteristics and high process yield as a series of test standard LEDs obtained in comparable conditions. Finally, the technology of embedded air-gap patterns (PhC) has significant potential in other related fields such as: increasing the optical mode interaction with the active region in semiconductor lasers; increasing the coupling of the incident light into the active region of solar cells; increasing the efficiency of the phosphorous light conversion in white light LEDs etc. In addition to the technology of embedded PhC LEDs, we demonstrate a technique for improvement of the light extraction and emission directionality for existing flip-chip microcavity (thin) LEDs by introducing PhC grating into the top n-contact. Although, the performances of these devices in terms of increase of the extraction efficiency are not significantly superior compared to those obtained by other techniques like surface roughening, the use of PhC offers some significant advantages such as improved and controllable emission directionality and a process that is directly applicable to any material system. The PhC microcavity LEDs have also potential for industrial implementation as the fabrication process has only minor differences to that already used for flip-chip thin LEDs. Finally, we have demonstrated that achieving good electrical properties and high fabrication yield for these devices is straightforward.« less

Highly Efficient Spectrally Stable Red Perovskite Light-Emitting Diodes.

PubMed

Tian, Yu; Zhou, Chenkun; Worku, Michael; Wang, Xi; Ling, Yichuan; Gao, Hanwei; Zhou, Yan; Miao, Yu; Guan, Jingjiao; Ma, Biwu

2018-05-01

Perovskite light-emitting diodes (LEDs) have recently attracted great research interest for their narrow emissions and solution processability. Remarkable progress has been achieved in green perovskite LEDs in recent years, but not blue or red ones. Here, highly efficient and spectrally stable red perovskite LEDs with quasi-2D perovskite/poly(ethylene oxide) (PEO) composite thin films as the light-emitting layer are reported. By controlling the molar ratios of organic salt (benzylammonium iodide) to inorganic salts (cesium iodide and lead iodide), luminescent quasi-2D perovskite thin films are obtained with tunable emission colors from red to deep red. The perovskite/polymer composite approach enables quasi-2D perovskite/PEO composite thin films to possess much higher photoluminescence quantum efficiencies and smoothness than their neat quasi-2D perovskite counterparts. Electrically driven LEDs with emissions peaked at 638, 664, 680, and 690 nm have been fabricated to exhibit high brightness and external quantum efficiencies (EQEs). For instance, the perovskite LED with an emission peaked at 680 nm exhibits a brightness of 1392 cd m -2 and an EQE of 6.23%. Moreover, exceptional electroluminescence spectral stability under continuous device operation has been achieved for these red perovskite LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigating and Optimizing Carrier Transport, Carrier Distribution, and Efficiency Droop in GaN-based Light-emitting Diodes

NASA Astrophysics Data System (ADS)

Zhu, Di

2011-12-01

The recent tremendous boost in the number and diversity of applications for light-emitting diodes (LEDs) indicates the emergence of the next-generation lighting and illumination technology. The rapidly improving LED technology is becoming increasingly viable especially for high-power applications. However, the greatest roadblock before finally breaching the main defensive position of conventional fluorescent and incandescent lamps still remains: GaN-based LEDs encounter a significant decrease in efficiency as the drive current increases, and this phenomenon is known as the efficiency droop. This dissertation focuses on uncovering the physical cause of efficiency droop in GaN-based LEDs and looks for solutions to it. GaN-based multiple-quantum-well (MQW) LEDs usually have abnormally high diode-ideality factors. Investigating the origin of the high diode-ideality factors could help to better understand the carrier transport in the LED MQW active region. We investigate the ideality factors of GaInN LEDs with different numbers of doped quantum barriers (QBs). Consistent with the theory, a decrease of the ideality factor as well as a reduction in forward voltage is found with increasing number of doped QBs. Experimental and simulation results indicate that the band profiles of QBs in the active region have a significant impact on the carrier transport mechanism, and the unipolar heterojunctions inside the active region play an important role in determining the diode-ideality factor. This dissertation will discuss several mechanisms leading to electron leakage which could be responsible for the efficiency droop. We show that the inefficient electron capture, the electron-attracting properties of polarized EBL, the inherent asymmetry in electron and hole transport and the inefficient EBL p-doping at high Al contents severely limit the ability to confine electrons to the MQWs. We demonstrate GaInN LEDs employing tailored Si doping in the QBs with strongly enhanced high-current efficiency and reduced efficiency droop. Compared with 4-QB-doped LEDs, 1-QB-doped LEDs show a 37.5% increase in light-output power at high currents. Consistent with the measurements, simulation shows a shift of radiative recombination among the MQWs and a reduced electron leakage current into the p-type GaN when fewer QBs are doped. The results can be attributed to a more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop. In this dissertation, artificial evolution is introduced to the LED optimization process which combines a genetic algorithm (GA) and device-simulation software. We show that this approach is capable of generating novel concepts in designing and optimizing LED devices. Application of the GA to the QB-doping in the MQWs yields optimized structures which is consistent with the tailored QB doping experiments. Application of the GA to the EBL region suggests a novel structure with an inverted sheet charge at the spacer-EBL interface. The resulting repulsion of electrons can significantly reduce electron leakage and enhance the efficiency. Finally, dual-wavelength LEDs, which have two types of quantum wells (QWs) emitting at two different wavelengths, are experimentally characterized and compared with numerical simulations. These dual-wavelength LEDs allow us to determine which QW emits most of the light. An experimental observation and a quantitative analysis of the radiative recombination shift within the MQW active region are obtained. In addition, an injection-current dependence of the radiative recombination shift is predicted by numerical simulations and indeed observed in dual-wavelength LEDs. This injection-current dependence of the radiative recombination distribution can be explained very well by incorporating quantum-mechanical tunneling of carriers into and through the QBs into to the classical drift-diffusion model. In summary, using the LEDs with tailored QB doping and dual-wavelength LEDs, we investigate the origin of the high diode-ideality factor of LEDs and gain insight on the control of carrier transport, carrier distribution, and radiative recombination in the LED MQW active region. Our results provide solid evidence on the effectiveness of the GA in the LED device optimization process. In addition, the innovative EBL structure optimized by the GA sheds light on further paths for the optimization of LED design. Our results are the starting point of applying artificial evolution to practical semiconductor devices, opening new perspectives for complex semiconductor device optimization and enabling breakthroughs in high-performance LED design.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Peng; State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012; Bai, Xue, E-mail: baix@jlu.edu.cn, E-mail: yuzhang@jlu.edu.cn

High quantum yield, narrow full width at half-maximum and tunable emission color of perovskite quantum dots (QDs) make this kind of material good prospects for light-emitting diodes (LEDs). However, the relatively poor stability under high temperature and air condition limits the device performance. To overcome this issue, the liquid-type packaging structure in combination with blue LED chip was employed to fabricate the fluorescent perovskite quantum dot-based LEDs. A variety of monochromatic LEDs with green, yellow, reddish-orange, and red emission were fabricated by utilizing the inorganic cesium lead halide perovskite quantum dots as the color-conversion layer, which exhibited the narrow fullmore » width at half-maximum (<35 nm), the relatively high luminous efficiency (reaching 75.5 lm/W), and the relatively high external quantum efficiency (14.6%), making it the best-performing perovskite LEDs so far. Compared to the solid state LED device, the liquid-type LED devices exhibited excellent color stability against the various working currents. Furthermore, we demonstrated the potential prospects of all-inorganic perovskite QDs for the liquid-type warm white LEDs.« less

Highly efficient all-nitride phosphor-converted white light emitting diode

NASA Astrophysics Data System (ADS)

Mueller-Mach, Regina; Mueller, Gerd; Krames, Michael R.; Höppe, Henning A.; Stadler, Florian; Schnick, Wolfgang; Juestel, Thomas; Schmidt, Peter

2005-07-01

The development and demonstration of a highly efficient warm-white all-nitride phosphor-converted light emitting diode (pc-LED) is presented utilizing a GaN based quantum well blue LED and two novel nitrogen containing luminescent materials, both of which are doped with Eu2+. For color conversion of the primary blue the nitridosilicates M2Si5N8 (orange-red) and MSi2O2N2 (yellow-green), with M = alkaline earth, were employed, thus achieving a high luminous efficiency (25 lumen/W at 1 W input), excellent color quality (correlated color temperature CCT = 3200 K, general color rendering index Ra > 90) and the highest proven color stability of any pc-LED obtained so far. Thus, these novel all-nitride LEDs are superior to both incandescent and fluorescent lamps and may therefore become the next generation of general lighting sources.

The High-efficiency LED Driver for Visible Light Communication Applications

PubMed Central

Gong, Cihun-Siyong Alex; Lee, Yu-Chen; Lai, Jyun-Liang; Yu, Chueh-Hao; Huang, Li Ren; Yang, Chia-Yen

2016-01-01

This paper presents a LED driver for VLC. The main purpose is to solve the low data rate problem used to be in switching type LED driver. The GaN power device is proposed to replace the traditional silicon power device of switching LED driver for the purpose of increasing switching frequency of converter, thereby increasing the bandwidth of data transmission. To achieve high efficiency, the diode-connected GaN power transistor is utilized to replace the traditional ultrafast recovery diode used to be in switching type LED driver. This work has been experimentally evaluated on 350-mA output current. The results demonstrate that it supports the data of PWM dimming level encoded in the PPM scheme for VLC application. The experimental results also show that system’s efficiency of 80.8% can be achieved at 1-Mb/s data rate. PMID:27498921

ELiXIR—Solid-State Luminaire With Enhanced Light Extraction by Internal Reflection

NASA Astrophysics Data System (ADS)

Allen, Steven C.; Steckl, Andrew J.

2007-06-01

A phosphor-converted light-emitting diode (pcLED) luminaire featuring enhanced light extraction by internal reflection (ELiXIR) with efficacy of 60 lm/W producing 18 lumens of yellowish green light at 100 mA is presented. The luminaire consists of a commercial blue high power LED, a polymer hemispherical shell lens with interior phosphor coating, and planar aluminized reflector. High extraction efficiency of the phosphor-converted light is achieved by separating the phosphor from the LED and using internal reflection to steer the light away from lossy reflectors and the LED package and out of the device. At 10 and 500 mA, the luminaire produces 2.1 and 66 lumens with efficacies of 80 and 37 lm/W, respectively. Technological improvements over existing commercial LEDs, such as more efficient pcLED packages or, alternatively, higher efficiency green or yellow for color mixing, will be essential to achieving 150 200 lm/W solid-state lighting. Advances in both areas are demonstrated.

Biologically inspired LED lens from cuticular nanostructures of firefly lantern

PubMed Central

Kim, Jae-Jun; Lee, Youngseop; Kim, Ha Gon; Choi, Ki-Ju; Kweon, Hee-Seok; Park, Seongchong; Jeong, Ki-Hun

2012-01-01

Cuticular nanostructures found in insects effectively manage light for light polarization, structural color, or optical index matching within an ultrathin natural scale. These nanostructures are mainly dedicated to manage incoming light and recently inspired many imaging and display applications. A bioluminescent organ, such as a firefly lantern, helps to out-couple light from the body in a highly efficient fashion for delivering strong optical signals in sexual communication. However, the cuticular nanostructures, except the light-producing reactions, have not been well investigated for physical principles and engineering biomimetics. Here we report a unique observation of high-transmission nanostructures on a firefly lantern and its biological inspiration for highly efficient LED illumination. Both numerical and experimental results clearly reveal high transmission through the nanostructures inspired from the lantern cuticle. The nanostructures on an LED lens surface were fabricated by using a large-area nanotemplating and reconfigurable nanomolding with heat-induced shear thinning. The biologically inspired LED lens, distinct from a smooth surface lens, substantially increases light transmission over visible ranges, comparable to conventional antireflection coating. This biological inspiration can offer new opportunities for increasing the light extraction efficiency of high-power LED packages. PMID:23112185

Investigating the origin of efficiency droop by profiling the temperature across the multi-quantum well of an operating light-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, Euihan; Hwang, Gwangseok; Chung, Jaehun

2015-01-26

Performance degradation resulting from efficiency droop during high-power operation is a critical problem in the development of high-efficiency light-emitting diodes (LEDs). In order to resolve the efficiency droop and increase the external quantum efficiency of LEDs, the droop's origin should be identified first. To experimentally investigate the cause of efficiency droop, we used null-point scanning thermal microscopy to quantitatively profile the temperature distribution on the cross section of the epi-layers of an operating GaN-based vertical LED with nanoscale spatial resolution at four different current densities. The movement of temperature peak towards the p-GaN side as the current density increases suggestsmore » that more heat is generated by leakage current than by Auger recombination. We therefore suspect that at higher current densities, current leakage becomes the dominant cause of the droop problem.« less

Recent developments in white light emitting diodes

NASA Astrophysics Data System (ADS)

Lohe, P. P.; Nandanwar, D. V.; Belsare, P. D.; Moharil, S. V.

2018-05-01

In the recent years solid state lighting based on LEDs has revolutionized lighting technology. LEDs have many advantages over the conventional lighting based on fluorescent and incandescent lamps such as mercury free, high conversion efficiency of electrical energy into light, long lifetime reliability and ability to use with many types of devices. LEDs have emerged as a new potentially revolutionary technology that could save up to half of energy used for lighting applications. White LEDs would be the most important light source in the future, so much so that this aspect had been highlighted by the Nobel committee during the award of 2014 Nobel Prize for Physics. Recent advancement in the fabrication of GaN chip capable of emitting in blue and near UV region paved way for fabrication of white LED lamps. Mainly there are two approaches used for preparing white emitting solid state lamp. In the first approach blue light (λ=450 nm) emitted from the InGaN LED chip is partially absorbed by the YAG:Ce3+ phosphor coated on it and re-emitted as yellow fluorescence. A white light can be generated by the combination of blue + yellow emission bands. These lamps are already available. But they are suffering from major drawback that their Colour Rendering Index (CRI) is low. In the second approach, white LEDs are made by coating near ultraviolet emitting (360 to 410nm) LED with a mixture of high efficiency red, green and blue emitting phosphors, analogous to the fluorescent lamp. This method yields lamps with better color rendition. Addition of a yellow emitting phosphor improves CRI further. However conversion efficiency is compromised to some extent. Further the cost of near UV emitting chip is very high compared to blue emitting chips. Thus cost and light output wise, near UV chips are much inferior to blue chips. Recently some rare earth activated oxynitrides, silicates, fluorides have emerged as an important family of luminescent materials for white LED application because they can emit visible light strongly under blue light irradiation. These are chemically, thermally and mechanically stable materials with high efficiency to down convert blue radiation into green and red. Efficient white light can be generated by coating these phosphors on blue LED.CRI of white emitting LED lamp can be improved significantly if green and red emitting phosphors are coated on efficient blue emitting LED chips. In this approach CRI will be maintained if appropriate combination of red, green along with blue emission is used. This article reviews some recent developments in phosphors for white light emitting diodes.

Highly Efficient Visible Colloidal Lead-Halide Perovskite Nanocrystal Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Yan, Fei; Xing, Jun; Xing, Guichuan; Quan, Lina; Tan, Swee Tiam; Zhao, Jiaxin; Su, Rui; Zhang, Lulu; Chen, Shi; Zhao, Yawen; Huan, Alfred; Sargent, Edward H.; Xiong, Qihua; Demir, Hilmi Volkan

2018-05-01

Lead-halide perovskites have been attracting attention for potential use in solid-state lighting. Following the footsteps of solar cells, the field of perovskite light-emitting diodes (PeLEDs) has been growing rapidly. Their application prospects in lighting, however, remain still uncertain due to a variety of shortcomings in device performance including their limited levels of luminous efficiency achievable thus far. Here we show high-efficiency PeLEDs based on colloidal perovskite nanocrystals (PeNCs) synthesized at room temperature possessing dominant first-order excitonic radiation (enabling a photoluminescence quantum yield of 71% in solid film), unlike in the case of bulk perovskites with slow electron-hole bimolecular radiative recombination (a second-order process). In these PeLEDs, by reaching charge balance in the recombination zone, we find that the Auger nonradiative recombination, with its significant role in emission quenching, is effectively suppressed in low driving current density range. In consequence, these devices reach a record high maximum external quantum efficiency of 12.9% reported to date and an unprecedentedly high power efficiency of 30.3 lm W-1 at luminance levels above 1000 cd m-2 as required for various applications. These findings suggest that, with feasible levels of device performance, the PeNCs hold great promise for their use in LED lighting and displays.

Experimental Study on Active Cooling Systems Used for Thermal Management of High-Power Multichip Light-Emitting Diodes

PubMed Central

2014-01-01

The objective of this study was to develop suitable cooling systems for high-power multichip LEDs. To this end, three different active cooling systems were investigated to control the heat generated by the powering of high-power multichip LEDs in two different configurations (30 and 2 × 15 W). The following cooling systems were used in the study: an integrated multi-fin heat sink design with a fan, a cooling system with a thermoelectric cooler (TEC), and a heat pipe cooling device. According to the results, all three systems were observed to be sufficient for cooling high-power LEDs. Furthermore, it was observed that the integrated multifin heat sink design with a fan was the most efficient cooling system for a 30 W high-power multichip LED. The cooling system with a TEC and 46 W input power was the most efficient cooling system for 2 × 15 W high-power multichip LEDs. PMID:25162058

Feasibility of light-emitting diode uses for annular reactor inner-coated with TiO2 or nitrogen-doped TiO2 for control of dimethyl sulfide.

PubMed

Jo, Wan-Kuen; Eun, Sung-Soo; Shin, Seung-Ho

2011-01-01

Limited environmental pollutants have only been investigated for the feasibility of light-emitting diodes (LED) uses in photocatalytic decomposition (PD). The present study investigated the applicability of LEDs for annular photocatalytic reactors by comparing PD efficiencies of dimethyl sulfide (DMS), which has not been investigated with any LED-PD system, between photocatalytic systems utilizing conventional and various LED lamps with different wavelengths. A conventional 8 W UV/TiO(2) system exhibited a higher DMS PD efficiency as compared with UV-LED/TiO(2) system. Similarly, a conventional 8 W visible-lamp/N-enhanced TiO(2) (NET) system exhibited a higher PD efficiency as compared with six visible-LED/NET systems. However, the ratios of PD efficiency to the electric power consumption were rather high for the photocatalytic systems using UV- or visible-LED lamps, except for two LED lamps (yellow- and red-LED lamps), compared to the photocatalytic systems using conventional lamps. For the photocatalytic systems using LEDs, lower flow rates and input concentrations and shorter hydraulic diameters exhibited higher DMS PD efficiencies. An Fourier-transformation infrared analysis suggested no significant absorption of byproducts on the catalyst surface. Consequently, it was suggested that LEDs can still be energy-efficiently utilized as alternative light sources for the PD of DMS, under the operational conditions used in this study. © 2011 The Authors. Photochemistry and Photobiology © 2011 The American Society of Photobiology.

Strained layer relaxation effect on current crowding and efficiency improvement of GaN based LED

NASA Astrophysics Data System (ADS)

Aurongzeb, Deeder

2012-02-01

Efficiency droop effect of GaN based LED at high power and high temperature is addressed by several groups based on career delocalization and photon recycling effect(radiative recombination). We extend the previous droop models to optical loss parameters. We correlate stained layer relaxation at high temperature and high current density to carrier delocalization. We propose a third order model and show that Shockley-Hall-Read and Auger recombination effect is not enough to account for the efficiency loss. Several strained layer modification scheme is proposed based on the model.

Development and Industrialization of InGaN/GaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Flemish, Joseph; Soer, Wouter

2015-11-30

Patterned sapphire substrate (PSS) technology has proven to be an effective approach to improve efficacy and reduce cost of light-emitting diodes (LEDs). The volume emission from the transparent substrate leads to high package efficiency, while the simple and robust architecture of PSS-based LEDs enables low cost. PSS substrates have gained wide use in mid-power LEDs over the past years. In this project, Lumileds has developed and industrialized PSS and epitaxy technology for high- power flip-chip LEDs to bring these benefits to a broader range of applications and accelerate the adoption of energy-efficient solid-state lighting (SSL). PSS geometries were designed formore » highly efficient light extraction in a flip-chip architecture and high-volume manufacturability, and corresponding sapphire patterning and epitaxy manufacturing processes were integrally developed. Concurrently, device and package architectures were developed to take advantage of the PSS flip-chip die in different types of products that meet application needs. The developed PSS and epitaxy technology has been fully implemented in manufacturing at Lumileds’ San Jose, CA location, and incorporated in illumination-grade LED products that have been successfully introduced to the market, including LUXEON Q and LUXEON FlipChip White.« less

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

PubMed Central

Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

2010-01-01

White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450−480 nm) and nUV (380−400 nm) LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+) is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

Interfacial Energy-Level Alignment for High-Performance All-Inorganic Perovskite CsPbBr3 Quantum Dot-Based Inverted Light-Emitting Diodes.

PubMed

Subramanian, Alagesan; Pan, Zhenghui; Zhang, Zhenbo; Ahmad, Imtiaz; Chen, Jing; Liu, Meinan; Cheng, Shuang; Xu, Yijun; Wu, Jun; Lei, Wei; Khan, Qasim; Zhang, Yuegang

2018-04-18

All-inorganic perovskite light-emitting diode (PeLED) has a high stability in ambient atmosphere, but it is a big challenge to achieve high performance of the device. Basically, device design, control of energy-level alignment, and reducing the energy barrier between adjacent layers in the architecture of PeLED are important factors to achieve high efficiency. In this study, we report a CsPbBr 3 -based PeLED with an inverted architecture using lithium-doped TiO 2 nanoparticles as the electron transport layer (ETL). The optimal lithium doping balances the charge carrier injection between the hole transport layer and ETL, leading to superior device performance. The device exhibits a current efficiency of 3 cd A -1 , a luminance efficiency of 2210 cd m -2 , and a low turn-on voltage of 2.3 V. The turn-on voltage is one of the lowest values among reported CsPbBr 3 -based PeLEDs. A 7-fold increase in device efficiencies has been obtained for lithium-doped TiO 2 compared to that for undoped TiO 2 -based devices.

Efficient conceptual design for LED-based pixel light vehicle headlamps

NASA Astrophysics Data System (ADS)

Held, Marcel Philipp; Lachmayer, Roland

2017-12-01

High-resolution vehicle headlamps represent a future-oriented technology that can be used to increase traffic safety and driving comfort. As a further development to the current Matrix Beam headlamps, LED-based pixel light systems enable ideal lighting functions (e.g. projection of navigation information onto the road) to be activated in any given driving scenario. Moreover, compared to other light-modulating elements such as DMDs and LCDs, instantaneous LED on-off toggling provides a decisive advantage in efficiency. To generate highly individualized light distributions for automotive applications, a number of approaches using an LED array may be pursued. One approach is to vary the LED density in the array so as to output the desired light distribution. Another notable approach makes use of an equidistant arrangement of the individual LEDs together with distortion optics to formulate the desired light distribution. The optical system adjusts the light distribution in a manner that improves resolution and increases luminous intensity of the desired area. An efficient setup for pixel generation calls for one lens per LED. Taking into consideration the limited space requirements of the system, this implies that the luminous flux, efficiency and resolution image parameters are primarily controlled by the lens dimensions. In this paper a concept for an equidistant LED array arrangement utilizing distortion optics is presented. The paper is divided into two parts. The first part discusses the influence of lens geometry on the system efficiency whereas the second part investigates the correlation between resolution and luminous flux based on the lens dimensions.

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Jamal-Eddine, Zane; Akyol, Fatih; Bajaj, Sanyam; Johnson, Jared M.; Calderon, Gabriel; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Hwang, Jinwoo; Rajan, Siddharth

2018-02-01

We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs) emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light absorption in the p-type contact layers and low electrical injection efficiency due to poor p-type conduction. In this work, a polarization engineered Al0.65Ga0.35N/In0.2Ga0.8N tunnel junction layer is adopted for non-equilibrium hole injection to replace the conventionally used direct p-type contact. A reverse-graded AlGaN contact layer is further introduced to realize a low resistance contact to the top n-AlGaN layer. This led to the demonstration of a low tunnel junction resistance of 1.9 × 10-3 Ω cm2 obtained at 1 kA/cm2. Light emission at 287 nm with an on-wafer peak external quantum efficiency of 2.8% and a wall-plug efficiency of 1.1% was achieved. The measured power density at 1 kA/cm2 was 54.4 W/cm2, confirming the efficient hole injection through interband tunneling. With the benefits of the minimized internal absorption and efficient hole injection, a tunnel-injected UV LED structure could enable future high efficiency UV emitters.

Power management of direct-view LED backlight for liquid crystal display

NASA Astrophysics Data System (ADS)

Lee, Xuan-Hao; Lin, Che-Chu; Chang, Yu-Yu; Chen, He-Xiang; Sun, Ching-Cherng

2013-03-01

In this paper, we present a study of management of power in function of luminous efficacy of white LED as well as the efficiency enhancement of the direct-view backlight with photon recycling. A cavity efficiency as high as 90.7% is demonstrated for a direct-view backlight with photon recycling. In the future, with a 90% backlight cavity, luminous efficacy of 200 lm/W for white LEDs, and a transmission efficiency of 10% for the liquid crystal panel, the required power of LEDs could be only 16 W. Up to 85% energy saving could be achieved in comparison to the power of the current liquid crystal display.

Numerical analysis of light extraction enhancement of GaN-based thin-film flip-chip light-emitting diodes with high-refractive-index buckling nanostructures

NASA Astrophysics Data System (ADS)

Yue, Qing-Yang; Yang, Yang; Cheng, Zhen-Jia; Guo, Cheng-Shan

2018-06-01

In this work, the light extraction efficiency enhancement of GaN-based thin-film flip-chip (TFFC) light-emitting diodes (LEDs) with high-refractive-index (TiO2) buckling nanostructures was studied using the three-dimensional finite difference time domain method. Compared with 2-D photonic crystals, the buckling structures have the advantages of a random directionality and a broad distribution in periodicity, which can effectively extract the guided light propagating in all azimuthal directions over a wide spectrum. Numerical studies revealed that the light extraction efficiency of buckling-structured LEDs reaches 1.1 times that of triangular lattice photonic crystals. The effects of the buckling structure feature sizes and the thickness of the N-GaN layer on the light extraction efficiency for TFFC LEDs were also investigated systematically. With optimized structural parameters, a significant light extraction enhancement of about 2.6 times was achieved for TiO2 buckling-structured TFFC LEDs compared with planar LEDs.

High-Efficiency All-Solution-Processed Light-Emitting Diodes Based on Anisotropic Colloidal Heterostructures with Polar Polymer Injecting Layers.

PubMed

Castelli, Andrea; Meinardi, Francesco; Pasini, Mariacecilia; Galeotti, Francesco; Pinchetti, Valerio; Lorenzon, Monica; Manna, Liberato; Moreels, Iwan; Giovanella, Umberto; Brovelli, Sergio

2015-08-12

Colloidal quantum dots (QDs) are emerging as true candidates for light-emitting diodes with ultrasaturated colors. Here, we combine CdSe/CdS dot-in-rod heterostructures and polar/polyelectrolytic conjugated polymers to demonstrate the first example of fully solution-based quantum dot light-emitting diodes (QD-LEDs) incorporating all-organic injection/transport layers with high brightness, very limited roll-off and external quantum efficiency as high as 6.1%, which is 20 times higher than the record QD-LEDs with all-solution-processed organic interlayers and exceeds by over 200% QD-LEDs embedding vacuum-deposited organic molecules.

Alleviation of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal quantum barriers

NASA Astrophysics Data System (ADS)

Kim, Sang-Jo; Lee, Kwang Jae; Park, Seong-Ju

2018-06-01

We numerically investigated the effects of trapezoidal quantum barriers (QBs) on efficiency droop in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs). Simulations showed that the electrostatic field in QWs of LEDs with trapezoidal barriers is reduced because of the reduced sheet charge density at the QW-QB interface caused by the thin GaN layer in trapezoidal QBs. Additionally, the InGaN grading region in trapezoidal QBs suppresses hot carrier transport and this enhances efficient carrier injection into the QWs. The electroluminescence intensity of an LED with trapezoidal QBs is increased by 10.2% and 6.7% at 245 A cm‑2 when compared with the intensities of LEDs with square-type GaN barriers and multilayer barriers, respectively. The internal quantum efficiency (IQE) droop of an LED with trapezoidal QBs is 16% at 300 A cm‑2, while LEDs with square-type GaN barriers and multilayer barriers have IQE droop of 31% and 24%, respectively. This IQE droop alleviation in LEDs with trapezoidal QBs is attributed to the reduced energy band bending, efficient hole injection, and more uniform hole distribution in the MQWs that results from reduction of the piezoelectric field by the trapezoidal QBs. These results indicate that the trapezoidal QB in MQWs is promising for enhanced efficiency in high-power GaN-based LEDs.

Highly-efficient GaN-based light-emitting diode wafers on La0.3Sr1.7AlTaO6 substrates

PubMed Central

Wang, Wenliang; Yang, Weijia; Gao, Fangliang; Lin, Yunhao; Li, Guoqiang

2015-01-01

Highly-efficient GaN-based light-emitting diode (LED) wafers have been grown on La0.3Sr1.7AlTaO6 (LSAT) substrates by radio-frequency molecular beam epitaxy (RF-MBE) with optimized growth conditions. The structural properties, surface morphologies, and optoelectronic properties of as-prepared GaN-based LED wafers on LSAT substrates have been characterized in detail. The characterizations have revealed that the full-width at half-maximums (FWHMs) for X-ray rocking curves of GaN(0002) and GaN(10-12) are 190.1 and 210.2 arcsec, respectively, indicating that high crystalline quality GaN films have been obtained. The scanning electron microscopy and atomic force microscopy measurements have shown the very smooth p-GaN surface with the surface root-mean-square (RMS) roughness of 1.3 nm. The measurements of low-temperature and room-temperature photoluminescence help to calculate the internal quantum efficiency of 79.0%. The as-grown GaN-based LED wafers have been made into LED chips with the size of 300 × 300 μm2 by the standard process. The forward voltage, the light output power and the external quantum efficiency for LED chips are 19.6 W, 2.78 V, and 40.2%, respectively, at a current of 20 mA. These results reveal the high optoelectronic properties of GaN-based LEDs on LSAT substrates. This work brings up a broad future application of GaN-based devices. PMID:25799042

Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

NASA Astrophysics Data System (ADS)

Feng, Shih-Wei; Liao, Po-Hsun; Leung, Benjamin; Han, Jung; Yang, Fann-Wei; Wang, Hsiang-Chen

2015-07-01

Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.

Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Shih-Wei, E-mail: swfeng@nuk.edu.tw; Liao, Po-Hsun; Leung, Benjamin

2015-07-28

Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantagesmore » of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.« less

Effect of ring-shaped SiO2 current blocking layer thickness on the external quantum efficiency of high power light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhou, Shengjun; Liu, Mengling; Hu, Hongpo; Gao, Yilin; Liu, Xingtong

2017-12-01

A ring-shaped SiO2 CBL underneath the p-electrode was employed to enhance current spreading of GaN-based light-emitting diodes (LEDs). Effects of ring-shaped SiO2 current blocking layer (CBL) thickness on optical and electrical characteristics of high power LEDs were investigated. A 190-nm-thick ring-shaped SiO2 CBL with inclined sidewalls was obtained using a combination of a thermally reflowed photoresist technique and an inductively coupled plasma (ICP) etching process, allowing for the deposition of conformal indium tin oxide (ITO) transparent conductive layer on sidewalls of ring-shaped SiO2 CBL. It was indicated that the external quantum efficiency (EQE) of high power LEDs increased with increasing thickness of ring-shaped SiO2 CBL. The EQE of high power LED with 190-nm-thick ring-shaped SiO2 CBL was 12.7% higher than that of high power LED without SiO2 CBL. Simulations performed with commercial SimuLED software package showed that the ring-shaped SiO2 CBL could significantly alleviate current crowding around p-electrode, resulting in enhanced current spreading over the entire high power LED structure.

Using a compositionally step graded hole reservoir layer with hole accelerating ability for reducing efficiency droop in GaN-based LEDs

NASA Astrophysics Data System (ADS)

Ye, Daqian; Zhang, Dongyan; Wu, Chaoyu; Wang, Duxiang; Xu, Chenke; Zhang, Jie; Huang, Meichun

2017-05-01

We presented a compositionally graded hole reservoir layers(HRL) - an AlGaN/GaN super lattice hole reservoir layer with Al mole fraction multi-step gradient from high to low (GSL-HRL) in this paper. The designed LED with compositionally step graded HRL shows comparable low operating voltage and less efficiency droop. Simulation results reveal that this graded HRL could reserve the hole effectively and the hole in HRL can be energized by the strong electric field due to the polarization caused by different Al contents AlxGa1-xN layers. Such a design makes hole travel across the p-type EBL and inject into the MQWs more efficiently and smoothly. The novel structure of HRL improves the performance of the LED significantly and gives a promising application in high power GaN-based LED in the future.

Multicolor white light-emitting diodes for illumination applications

NASA Astrophysics Data System (ADS)

Chi, Solomon W. S.; Chen, Tzer-Perng; Tu, Chuan-Cheng; Chang, Chih-Sung; Tsai, Tzong-Liang; Hsieh, Mario C. C.

2004-01-01

Semiconductor light emitting diode (LED) has become a promising device for general-purpose illumination applications. LED has the features of excellent durability, long operation life, low power consumption, no mercury containing and potentially high efficiency. Several white LED technologies appear capable of meeting the technical requirements of illumination. In this paper we present a new multi-color white (MCW) LED as a high luminous efficacy, high color rendering index and low cost white illuminator. The device consists of two LED chips, one is AlInGaN LED for emitting shorter visible spectra, another is AlInGaP LED for emitting longer visible spectra. At least one chip in the MCW-LED has two or more transition energy levels used for emitting two or more colored lights. The multiple colored lights generated from the MCW-LED can be mixed into a full-spectral white light. Besides, there is no phosphors conversion layer used in the MCW-LED structure. Therefore, its color rendering property and illumination efficiency are excellent. The Correlated Color Temperature (CCT) of the MCW-LED may range from 2,500 K to over 10,000 K. The theoretical General Color Rendering Index (Ra) could be as high as 94, which is close to the incandescent and halogen sources, while the Ra of binary complementary white (BCW) LED is about 30 ~ 45. Moreover, compared to the expensive ternary RGB (Red AlInGaP + Green AlInGaN + Blue AlInGaN) white LED sources, the MCW-LED uses only one AlInGaN chip in combination with one cheap AlInGaP chip, to form a low cost, high luminous performance white light source. The MCW-LED is an ideal light source for general-purpose illumination applications.

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode.

PubMed

Wang, Zhibin; Cheng, Tai; Wang, Fuzhi; Bai, Yiming; Bian, Xingming; Zhang, Bing; Hayat, Tasawar; Alsaedi, Ahmed; Tan, Zhan'ao

2018-05-31

Stable and efficient red (R), green (G), and blue (B) light sources based on solution-processed quantum dots (QDs) play important roles in next-generation displays and solid-state lighting technologies. The brightness and efficiency of blue QDs-based light-emitting diodes (LEDs) remain inferior to their red and green counterparts, due to the inherently unfavorable energy levels of different colors of light. To solve these problems, a device structure should be designed to balance the injection holes and electrons into the emissive QD layer. Herein, through a simple autoxidation strategy, pure blue QD-LEDs which are highly bright and efficient are demonstrated, with a structure of ITO/PEDOT:PSS/Poly-TPD/QDs/Al:Al2O3. The autoxidized Al:Al2O3 cathode can effectively balance the injected charges and enhance radiative recombination without introducing an additional electron transport layer (ETL). As a result, high color-saturated blue QD-LEDs are achieved with a maximum luminance over 13,000 cd m -2 , and a maximum current efficiency of 1.15 cd A -1 . The easily controlled autoxidation procedure paves the way for achieving high-performance blue QD-LEDs.

Efficient electroluminescent cooling with a light-emitting diode coupled to a photovoltaic cell (Conference Presentation)

NASA Astrophysics Data System (ADS)

Xiao, Tianyao P.; Chen, Kaifeng; Santhanam, Parthiban; Fan, Shanhui; Yablonovitch, Eli

2017-02-01

The new breakthrough in photovoltaics, exemplified by the slogan "A great solar cell has to be a great light-emitting diode (LED)", has led to all the major new solar cell records, while also leading to extraordinary LED efficiency. As an LED becomes very efficient in converting its electrical input into light, the device cools as it operates because the photons carry away entropy as well as energy. If these photons are absorbed in a photovoltaic (PV) cell, the generated electricity can be used to provide part of the electrical input that drives the LED. Indeed, the LED/PV cell combination forms a new type of heat engine with light as the working fluid. The electroluminescent refrigerator requires only a small amount of external electricity to provide cooling, leading to a high coefficient of performance. We present the theoretical performance of such a refrigerator, in which the cool side (LED) is radiatively coupled to the hot side (PV) across a vacuum gap. The coefficient of performance is maximized by using a highly luminescent material, such as GaAs, together with device structures that optimize extraction of the luminescence. We consider both a macroscopic vacuum gap and a sub-wavelength gap; the latter allows for evanescent coupling of photons between the devices, potentially providing a further enhancement to the efficiency of light extraction. Using device assumptions based on the current record-efficiency solar cells, we show that electroluminescent cooling can, in certain regimes of cooling power, achieve a higher coefficient of performance than thermoelectric cooling.

Transparent perovskite light-emitting diodes by employing organic-inorganic multilayer transparent top electrodes

NASA Astrophysics Data System (ADS)

Liang, Junqing; Guo, Xiaoyang; Song, Li; Lin, Jie; Hu, Yongsheng; Zhang, Nan; Liu, Xingyuan

2017-11-01

Perovskite light-emitting diodes (PeLEDs) have attracted much attention in the past two years due to their high photoluminescence quantum efficiencies and wavelength tuneable characteristics. In this work, transparent PeLEDs (TPeLEDs) have been reported with organic-inorganic multilayer transparent top electrodes that have more convenient control of the organic/electrode interface. By optimizing the thickness of the MoO3 layer in the top electrode, the best average transmittance of 47.21% has been obtained in the TPeLED in the wavelength range of 380-780 nm. In addition, the TPeLED exhibits a maximum luminance of 6380 cd/m2, a maximum current efficiency (CE) of 3.50 cd/A, and a maximum external quantum efficiency (EQE) of 0.85% from the bottom side together with a maximum luminance of 3380 cd/m2, a maximum CE of 1.47 cd/A, and a maximum EQE of 0.36% from the top side. The total EQE of the TPeLED is about 86% of that of the reference device, indicating efficient TPeLED achieved in this work, which could have significant contribution to PeLEDs for see-through displays.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohite, Aditya; Blancon, Jean-Christophe

In the eternal search for next generation high-efficiency solar cells and LEDs, scientists at Los Alamos National Laboratory and their partners are gaining an extra degree of freedom in designing and fabricating efficient optoelectronic devices based on 2D layered hybrid perovskites. Industrial applications could include low cost solar cells, LEDs, laser diodes, detectors, and other nano-optoelectronic devices. The 2D, near-single-crystalline “Ruddlesden-Popper” thin films have an out-of-plane orientation so that uninhibited charge transport occurs through the perovskite layers in planar devices. The new research finds the existence of “layer-edge-states” at the edges of the perovskite layers which are key to bothmore » high efficiency of solar cells (greater than 12 percent) and high fluorescence efficiency (a few tens of percent) for LEDs. The spontaneous conversion of excitons (bound electron-hole pairs) to free carriers via these layer-edge states appears to be the key to the improvement of the photovoltaic and light-emitting thin film layered materials.« less

Efficient Visible Light Communication Transmitters Based on Switching-Mode dc-dc Converters.

PubMed

Rodríguez, Juan; Lamar, Diego G; Aller, Daniel G; Miaja, Pablo F; Sebastián, Javier

2018-04-07

Visible light communication (VLC) based on solid-state lighting (SSL) is a promising option either to supplement or to substitute existing radio frequency (RF) wireless communication in indoor environments. VLC systems take advantage of the fast modulation of the visible light that light emitting diodes (LEDs) enable. The switching-mode dc-to-dc converter (SMC dc-dc ) must be the cornerstone of the LED driver of VLC transmitters in order to incorporate the communication functionality into LED lighting, keeping high power efficiency. However, the new requirements related to the communication, especially the high bandwidth that the LED driver must achieve, converts the design of the SMC dc-dc into a very challenging task. In this work, three different methods for achieving such a high bandwidth with an SMC dc-dc are presented: increasing the order of the SMC dc-dc output filter, increasing the number of voltage inputs, and increasing the number of phases. These three strategies are combinable and the optimum design depends on the particular VLC application, which determines the requirements of the VLC transmitter. As an example, an experimental VLC transmitter based on a two-phase buck converter with a fourth-order output filter will demonstrate that a bandwidth of several hundred kilohertz (kHz) can be achieved with output power levels close to 10 W and power efficiencies between 85% and 90%. In conclusion, the design strategy presented allows us to incorporate VLC into SSL, achieving high bit rates without damaging the power efficiency of LED lighting.

Efficient Visible Light Communication Transmitters Based on Switching-Mode dc-dc Converters

PubMed Central

2018-01-01

Visible light communication (VLC) based on solid-state lighting (SSL) is a promising option either to supplement or to substitute existing radio frequency (RF) wireless communication in indoor environments. VLC systems take advantage of the fast modulation of the visible light that light emitting diodes (LEDs) enable. The switching-mode dc-to-dc converter (SMCdc-dc) must be the cornerstone of the LED driver of VLC transmitters in order to incorporate the communication functionality into LED lighting, keeping high power efficiency. However, the new requirements related to the communication, especially the high bandwidth that the LED driver must achieve, converts the design of the SMCdc-dc into a very challenging task. In this work, three different methods for achieving such a high bandwidth with an SMCdc-dc are presented: increasing the order of the SMCdc-dc output filter, increasing the number of voltage inputs, and increasing the number of phases. These three strategies are combinable and the optimum design depends on the particular VLC application, which determines the requirements of the VLC transmitter. As an example, an experimental VLC transmitter based on a two-phase buck converter with a fourth-order output filter will demonstrate that a bandwidth of several hundred kilohertz (kHz) can be achieved with output power levels close to 10 W and power efficiencies between 85% and 90%. In conclusion, the design strategy presented allows us to incorporate VLC into SSL, achieving high bit rates without damaging the power efficiency of LED lighting. PMID:29642455

Single-crystal phosphors for high-brightness white LEDs/LDs

NASA Astrophysics Data System (ADS)

Víllora, Encarnación G.; Arjoca, Stelian; Inomata, Daisuke; Shimamura, Kiyoshi

2016-03-01

White light-emitting diodes (wLEDs) are the new environmental friendly sources for general lighting purposes. For applications requiring a high-brightness, current wLEDs present overheating problems, which drastically decrease their emission efficiency, color quality and lifetime. This work gives an overview of the recent investigations on single-crystal phosphors (SCPs), which are proposed as novel alternative to conventional ceramic powder phosphors (CPPs). This totally new approach takes advantage of the superior properties of single-crystals in comparison with ceramic materials. SCPs exhibit an outstanding conversion efficiency and thermal stability up to 300°C. Furthermore, compared with encapsulated CPPs, SCPs possess a superior thermal conductivity, so that generated heat can be released efficiently. The conjunction of all these characteristics results in a low temperature rise of SCPs even under high blue irradiances, where conventional CPPs are overheated or even burned. Therefore, SCPs represent the ideal, long-demanded all-inorganic phosphors for high-brightness white light sources, especially those involving the use of high-density laser-diode beams.

Highly Efficient Small Form Factor LED Retrofit Lamp

DOE Office of Scientific and Technical Information (OSTI.GOV)

Steven Allen; Fred Palmer; Ming Li

2011-09-11

This report summarizes work to develop a high efficiency LED-based MR16 lamp downlight at OSRAM SYLVANIA under US Department of Energy contract DE-EE0000611. A new multichip LED package, electronic driver, and reflector optic were developed for these lamps. At steady-state, the lamp luminous flux was 409 lumens (lm), luminous efficacy of 87 lumens per watt (LPW), CRI (Ra) of 87, and R9 of 85 at a correlated color temperature (CCT) of 3285K. The LED alone achieved 120 lumens per watt efficacy and 600 lumen flux output at 25 C. The driver had 90% electrical conversion efficiency while maintaining excellent powermore » quality with power factor >0.90 at a power of only 5 watts. Compared to similar existing MR16 lamps using LED sources, these lamps had much higher efficacy and color quality. The objective of this work was to demonstrate a LED-based MR16 retrofit lamp for replacement of 35W halogen MR16 lamps having (1) luminous flux of 500 lumens, (2) luminous efficacy of 100 lumens per watt, (3) beam angle less than 40{sup o} and center beam candlepower of at least 1000 candelas, and (4) excellent color quality.« less

Nitride micro-LEDs and beyond--a decade progress review.

PubMed

Jiang, H X; Lin, J Y

2013-05-06

Since their inception, micro-size light emitting diode (µLED) arrays based on III-nitride semiconductors have emerged as a promising technology for a range of applications. This paper provides an overview on a decade progresses on realizing III-nitride µLED based high voltage single-chip AC/DC-LEDs without power converters to address the key compatibility issue between LEDs and AC power grid infrastructure; and high-resolution solid-state self-emissive microdisplays operating in an active driving scheme to address the need of high brightness, efficiency and robustness of microdisplays. These devices utilize the photonic integration approach by integrating µLED arrays on-chip. Other applications of nitride µLED arrays are also discussed.

A high-performance doped photocatalysts for inactivation of total coliforms in superficial waters using different sources of radiation.

PubMed

Claro, Elis Marina Turini; Bidoia, Ederio Dino; de Moraes, Peterson Bueno

2016-07-15

Photocatalytic water treatment has a currently elevated electricity demand and maintenance costs, but the photocatalytic water treatment may also assist in overcoming the limitations and drawbacks of conventional water treatment processes. Among the Advanced Oxidation Processes, heterogeneous photocatalysis is one of the most widely and efficiently used processes to degrade and/or remove a wide range of polluting compounds. The goal of this work was to find out a highly efficient photocatalytic disinfection process in superficial water with different doped photocatalysts and using three sources of radiation: mercury vapor lamp, solar simulator and UV-A LED. Three doped photocatalysts were prepared, SiZnO, NSiZnO and FNSiZnO. The inactivation efficiency of each synthesized photocatalysts was compared to a TiO2 P25 (Degussa(®)) 0.5 g L(-1) control. Photolysis inactivation efficiency was 85% with UV-A LED, which is considered very high, demanding low electricity consumption in the process, whereas mercury vapor lamp and solar simulator yielded 19% and 13% inactivation efficiency, respectively. The best conditions were found with photocatalysts SiZnO, FNSiZnO and NSiZnO irradiated with UV-A LED, where efficiency exceeded 95% that matched inactivation of coliforms using the same irradiation and photocatalyst TiO2. All photocatalysts showed photocatalytic activity with all three radiation sources able to inactivate total coliforms from river water. The use of UV-A LED as the light source without photocatalyst is very promising, allowing the creation of cost-effective and highly efficient water treatment plants. Copyright © 2016 Elsevier Ltd. All rights reserved.

Dependencies of surface plasmon coupling effects on the p-GaN thickness of a thin-p-type light-emitting diode.

PubMed

Su, Chia-Ying; Lin, Chun-Han; Yao, Yu-Feng; Liu, Wei-Heng; Su, Ming-Yen; Chiang, Hsin-Chun; Tsai, Meng-Che; Tu, Charng-Gan; Chen, Hao-Tsung; Kiang, Yean-Woei; Yang, C C

2017-09-04

The high performance of a light-emitting diode (LED) with the total p-type thickness as small as 38 nm is demonstrated. By increasing the Mg doping concentration in the p-AlGaN electron blocking layer through an Mg pre-flow process, the hole injection efficiency can be significantly enhanced. Based on this technique, the high LED performance can be maintained when the p-type layer thickness is significantly reduced. Then, the surface plasmon coupling effects, including the enhancement of internal quantum efficiency, increase in output intensity, reduction of efficiency droop, and increase of modulation bandwidth, among the thin p-type LED samples of different p-type thicknesses that are compared. These advantageous effects are stronger as the p-type layer becomes thinner. However, the dependencies of these effects on p-type layer thickness are different. With a circular mesa size of 10 μm in radius, through surface plasmon coupling, we achieve the record-high modulation bandwidth of 625.6 MHz among c-plane GaN-based LEDs.

An Integrated Multilevel Converter with Sigma Delta Control for LED Lighting

NASA Astrophysics Data System (ADS)

Gerber, Daniel L.

High brightness LEDs have become a mainstream lighting technology due to their efficiency, life span, and environmental benefits. As such, the lighting industry values LED drivers with low cost, small form factor, and long life span. Additional specifications that define a high quality LED driver are high efficiency, high power factor, wide-range dimming, minimal flicker, and a galvanically isolated output. The flyback LED driver is a popular topology that satisfies all these specifications, but it requires a bulky and costly flyback transformer. In addition, its passive methods for cancelling AC power ripple require electrolytic capacitors, which have been known to have life span issues. This dissertation details the design, construction, and verification of a novel LED driver that satisfies all the specifications. In addition, it does not require a flyback transformer or electrolytic capacitors, thus marking an improvement over the flyback driver on size, cost, and life span. This dissertation presents an integrated circuit (IC) LED driver, which features a pair of generalized multilevel converters that are controlled via sigma-delta modulation. The first is a multilevel rectifier responsible for power factor correction (PFC) and dimming. The PFC rectifier employs a second order sigma-delta loop to precisely control the input current harmonics and amplitude. The second is a bidirectional multilevel inverter used to cancel AC power ripple from the DC bus. This ripple-cancellation module transfers energy to and from a storage capacitor. It uses a first order sigma-delta loop with a preprogrammed waveform to swing the storage capacitor voltage. The system also contains an output stage that powers the LEDs with DC and provides for galvanic isolation. The output stage consists of an H-bridge stack that connects to the output through a small toroid transformer. The IC LED driver was simulated and prototyped on an ABCD silicon test chip. Testing and verification indicates functional performance for all the modules in the LED driver. The driver exhibits moderate efficiency at half voltage. Although the part was only testable to half voltage, loss models predict that its efficiency would be much higher at full voltage. The driver also meets specifications on the line current harmonics and ripple cancellation. This dissertation introduces multilevel circuit techniques to the IC and LED research space. The prototype's functional performance indicates that integrated multilevel converters are a viable topology for lighting and other similar applications.

Economic analysis of greenhouse lighting: light emitting diodes vs. high intensity discharge fixtures.

PubMed

Nelson, Jacob A; Bugbee, Bruce

2014-01-01

Lighting technologies for plant growth are improving rapidly, providing numerous options for supplemental lighting in greenhouses. Here we report the photosynthetic (400-700 nm) photon efficiency and photon distribution pattern of two double-ended HPS fixtures, five mogul-base HPS fixtures, ten LED fixtures, three ceramic metal halide fixtures, and two fluorescent fixtures. The two most efficient LED and the two most efficient double-ended HPS fixtures had nearly identical efficiencies at 1.66 to 1.70 micromoles per joule. These four fixtures represent a dramatic improvement over the 1.02 micromoles per joule efficiency of the mogul-base HPS fixtures that are in common use. The best ceramic metal halide and fluorescent fixtures had efficiencies of 1.46 and 0.95 micromoles per joule, respectively. We also calculated the initial capital cost of fixtures per photon delivered and determined that LED fixtures cost five to ten times more than HPS fixtures. The five-year electric plus fixture cost per mole of photons is thus 2.3 times higher for LED fixtures, due to high capital costs. Compared to electric costs, our analysis indicates that the long-term maintenance costs are small for both technologies. If widely spaced benches are a necessary part of a production system, the unique ability of LED fixtures to efficiently focus photons on specific areas can be used to improve the photon capture by plant canopies. Our analysis demonstrates, however, that the cost per photon delivered is higher in these systems, regardless of fixture category. The lowest lighting system costs are realized when an efficient fixture is coupled with effective canopy photon capture.

Quantum-Dot Light-Emitting Diodes with Nitrogen-Doped Carbon Nanodot Hole Transport and Electronic Energy Transfer Layer.

PubMed

Park, Young Ran; Jeong, Hu Young; Seo, Young Soo; Choi, Won Kook; Hong, Young Joon

2017-04-12

Electroluminescence efficiency is crucial for the application of quantum-dot light-emitting diodes (QD-LEDs) in practical devices. We demonstrate that nitrogen-doped carbon nanodot (N-CD) interlayer improves electrical and luminescent properties of QD-LEDs. The N-CDs were prepared by solution-based bottom up synthesis and were inserted as a hole transport layer (HTL) between other multilayer HTL heterojunction and the red-QD layer. The QD-LEDs with N-CD interlayer represented superior electrical rectification and electroluminescent efficiency than those without the N-CD interlayer. The insertion of N-CD layer was found to provoke the Förster resonance energy transfer (FRET) from N-CD to QD layer, as confirmed by time-integrated and -resolved photoluminescence spectroscopy. Moreover, hole-only devices (HODs) with N-CD interlayer presented high hole transport capability, and ultraviolet photoelectron spectroscopy also revealed that the N-CD interlayer reduced the highest hole barrier height. Thus, more balanced carrier injection with sufficient hole carrier transport feasibly lead to the superior electrical and electroluminescent properties of the QD-LEDs with N-CD interlayer. We further studied effect of N-CD interlayer thickness on electrical and luminescent performances for high-brightness QD-LEDs. The ability of the N-CD interlayer to improve both the electrical and luminescent characteristics of the QD-LEDs would be readily exploited as an emerging photoactive material for high-efficiency optoelectronic devices.

Illumination design for semiconductor backlight inspection and application extensions

NASA Astrophysics Data System (ADS)

Zhou, Wei; Rutherford, Todd; Hart, Darcy

2013-09-01

High speed strobe based illumination scheme is one of the most critical factors for high throughput semiconductor defect inspection applications. HB LEDs are always the first and best options for such applications due to numerous unique advantages such as excellent spatial and temporal stability, fast responding time, large and linear intensity dynamic range and no heat issue for the extremely low duty cycle applications. For some applications where a large area is required to be illuminated simultaneously, it remains a great challenge to efficiently package a large amount of HB-LEDs in a highly confined 3D space, to generate a seamless illuminated area with high luminance efficiency and spatial uniformity. A novel 3D structured collimation lens is presented in this paper. The non-circular edge shape reduces the intensity drop at the channel boundaries, while the secondary curvatures on the top of the collimator lens efficiently guides the light into desired angular space. The number of the edges and the radius of the top surface curvature are control parameters for the system level performance and the manufacture cost trade-off. The proposed 3D structured LED collimation lens also maintains the benefits of traditional LED collimation lens such as coupling efficiency and mold manufacture capability. The applications can be extended into other non-illumination area like parallelism measurement and solar panel concentrator etc.

Room-Temperature Triple-Ligand Surface Engineering Synergistically Boosts Ink Stability, Recombination Dynamics, and Charge Injection toward EQE-11.6% Perovskite QLEDs.

PubMed

Song, Jizhong; Li, Jinhang; Xu, Leimeng; Li, Jianhai; Zhang, Fengjuan; Han, Boning; Shan, Qingsong; Zeng, Haibo

2018-06-10

Developing low-cost and high-quality quantum dots (QDs) or nanocrystals (NCs) and their corresponding efficient light-emitting diodes (LEDs) is crucial for the next-generation ultra-high-definition flexible displays. Here, there is a report on a room-temperature triple-ligand surface engineering strategy to play the synergistic role of short ligands of tetraoctylammonium bromide (TOAB), didodecyldimethylammonium bromide (DDAB), and octanoic acid (OTAc) toward "ideal" perovskite QDs with a high photoluminescence quantum yield (PLQY) of >90%, unity radiative decay in its intrinsic channel, stable ink characteristics, and effective charge injection and transportation in QD films, resulting in the highly efficient QD-based LEDs (QLEDs). Furthermore, the QD films with less nonradiative recombination centers exhibit improved PL properties with a PLQY of 61% through dopant engineering in A-site. The robustness of such properties is demonstrated by the fabrication of green electroluminescent LEDs based on CsPbBr 3 QDs with the peak external quantum efficiency (EQE) of 11.6%, and the corresponding peak internal quantum efficiency (IQE) and power efficiency are 52.2% and 44.65 lm W -1 , respectively, which are the most-efficient perovskite QLEDs with colloidal CsPbBr 3 QDs as emitters up to now. These results demonstrate that the as-obtained QD inks have a wide range application in future high-definition QD displays and high-quality lightings. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Perspective: Toward efficient GaN-based red light emitting diodes using europium doping

NASA Astrophysics Data System (ADS)

Mitchell, Brandon; Dierolf, Volkmar; Gregorkiewicz, Tom; Fujiwara, Yasufumi

2018-04-01

While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available, the search for an efficient red LED based on GaN is ongoing. The realization of this LED is crucial for the monolithic integration of the three primary colors and the development of nitride-based full-color high-resolution displays. In this perspective, we will address the challenges of attaining red luminescence from GaN under current injection and the methods that have been developed to circumvent them. While several approaches will be mentioned, a large emphasis will be placed on the recent developments of doping GaN with Eu3+ to achieve an efficient red GaN-based LED. Finally, we will provide an outlook to the future of this material as a candidate for small scale displays such as mobile device screens or micro-LED displays.

Development of AlGaN-based deep-ultraviolet (DUV) LEDs focusing on the fluorine resin encapsulation and the prospect of the practical applications

NASA Astrophysics Data System (ADS)

Hirano, Akira; Nagasawa, Yosuke; Ippommatsu, Masamichi; Aosaki, Ko; Honda, Yoshio; Amano, Hiroshi; Akasaki, Isamu

2016-09-01

AlGaN-based LEDs are expected to be useful for sterilization, deodorization, photochemical applications such as UV curing and UV printing, medical applications such as phototherapy, and sensing. Today, it has become clear that efficient AlGaN-based LED dies are producible between 355 and 250 nm with an external quantum efficiency (EQE) of 3% on flat sapphire. These dies were realized on flat sapphire without using a special technique, i.e., reduction in threading dislocation density or light extraction enhancement techniques such as the use of a photonic crystal or a patterned sapphire substrate. Despite the limited light extraction efficiency of about 8% owing to light absorption at a thick p-GaN contact layer, high EQEs of approximately 6% has been reproducible between 300 and 280 nm without using special techniques. Moreover, an EQE of 3.9% has been shown at 271 nm, despite the smaller current injection efficiency (CIE). The high EQEs are thought to correspond to the high internal quantum efficiency (IQE), indicating a small room for improving IQE. Accordingly, resin encapsulation on a simple submount is strongly desired. Recently, we have succeeded in demonstrating fluorine resin encapsulation on a ceramic sheet (chip-on-board, COB) that is massproducible. Furthermore, the molecular structure of a resin with a durability of more than 10,000 h is explained in this paper from the photochemical viewpoint. Thus, the key technologies of AlGaN-based DUV-LEDs having an EQE of 10% within a reasonable production cost have been established. The achieved efficiency makes AlGaN-based DUVLEDs comparable to high-pressure mercury lamps.

Trade-off between bandwidth and efficiency in semipolar (20 2 ¯ 1 ¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes

NASA Astrophysics Data System (ADS)

Monavarian, M.; Rashidi, A.; Aragon, A. A.; Nami, M.; Oh, S. H.; DenBaars, S. P.; Feezell, D.

2018-05-01

InGaN/GaN light-emitting diodes (LEDs) with large modulation bandwidths are desirable for visible-light communication. Along with modulation speed, the consideration of the internal quantum efficiency (IQE) under operating conditions is also important. Here, we report the modulation characteristics of semipolar (20 2 ¯ 1 ¯ ) InGaN/GaN (LEDs) with single-quantum well (SQW) and multiple-quantum-well (MQW) active regions grown on free-standing semipolar GaN substrates with peak internal quantum efficiencies (IQEs) of 0.93 and 0.73, respectively. The MQW LEDs exhibit on average about 40-80% higher modulation bandwidth, reaching 1.5 GHz at 13 kA/cm2, but about 27% lower peak IQE than the SQW LEDs. We extract the differential carrier lifetimes (DLTs), RC parasitics, and carrier escape lifetimes and discuss their role in the bandwidth and IQE characteristics. A coulomb-enhanced capture process is shown to rapidly reduce the DLT of the MQW LED at high current densities. Auger recombination is also shown to play little role in increasing the speed of the LEDs. Finally, we investigate the trade-offs between the bandwidth and efficiency and introduce the bandwidth-IQE product as a potential figure of merit for optimizing speed and efficiency in InGaN/GaN LEDs.

Enhanced wall-plug efficiency in AlGaN-based deep-ultraviolet light-emitting diodes with uniform current spreading p-electrode structures

NASA Astrophysics Data System (ADS)

Hao, Guo-Dong; Taniguchi, Manabu; Tamari, Naoki; Inoue, Shin-ichiro

2016-06-01

The current crowding is an especially severe issue in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) because of the low conductivity of the n-AlGaN cladding layer that has a high Al fraction. We theoretically investigated the improvement in internal quantum efficiency and total resistances in DUV-LEDs with an emission wavelength of 265 nm by a well-designed p-electrode geometry to produce uniform current spreading. As a result, the wall-plug efficiency was enhanced by a factor of 60% at an injection current of 350 mA in the designed uniform-current-spreading p-electrode LED when compared with an LED with a conventional cross-bar p-electrode pattern.

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.

PubMed

Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

2015-09-02

High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This "compliant" buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 10(5) cm(-2). In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6" wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors.

Bridging the "green gap" of LEDs: giant light output enhancement and directional control of LEDs via embedded nano-void photonic crystals.

PubMed

Tsai, Yu-Lin; Liu, Che-Yu; Krishnan, Chirenjeevi; Lin, Da-Wei; Chu, You-Chen; Chen, Tzu-Pei; Shen, Tien-Lin; Kao, Tsung-Sheng; Charlton, Martin D B; Yu, Peichen; Lin, Chien-Chung; Kuo, Hao-Chung; He, Jr-Hau

2016-01-14

Green LEDs do not show the same level of performance as their blue and red cousins, greatly hindering the solid-state lighting development, which is the so-called "green gap". In this work, nano-void photonic crystals (NVPCs) were fabricated to embed within the GaN/InGaN green LEDs by using epitaxial lateral overgrowth (ELO) and nano-sphere lithography techniques. The NVPCs act as an efficient scattering back-reflector to outcouple the guided and downward photons, which not only boost the light extraction efficiency of LEDs with an enhancement of 78% but also collimate the view angle of LEDs from 131.5° to 114.0°. This could be because of the highly scattering nature of NVPCs which reduce the interference giving rise to Fabry-Perot resonance. Moreover, due to the threading dislocation suppression and strain relief by the NVPCs, the internal quantum efficiency was increased by 25% and droop behavior was reduced from 37.4% to 25.9%. The enhancement of light output power can be achieved as high as 151% at a driving current of 350 mA. Giant light output enhancement and directional control via NVPCs point the way towards a promising avenue of solid-state lighting.

Photoluminescence studies of high-efficient red-emitting K{sub 2}Y(WO{sub 4})(PO{sub 4}):Eu{sup 3+} phosphor for NUV LED

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Xinguo; State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-Sen University, Guangzhou 510275; Chen, Mengyang

Highlights: • Novel K{sub 2}Y(WO{sub 4})(PO{sub 4}):Eu{sup 3+} red phosphors were prepared by solid-state method. • Phosphors exhibit strong red light under NUV excitation with quantum efficiency of 70.5 %. • Judd–Ofelt analysis ascertains the presence of Eu{sup 3+} in a highly asymmetric environment. • The red LED prototype was fabricated with KYWP:Eu{sup 3+} phosphor and InGaN chip. - Abstract: A series of high-efficient red-emitting phosphors K{sub 2}Y(WO{sub 4})(PO{sub 4}):Eu{sup 3+} have been successfully synthesized by conventional solid-state reaction, and its photoluminescence (PL) properties have been investigated. The phosphors can be excited efficiently by NUV light, then exhibit strong redmore » emission with quantum efficiency of 70.5%. The concentration quenching takes place at relatively high concentration of Eu{sup 3+} (x = 0.70), which is further confirmed by the variation of decay curves of the entitled phosphors. Judd–Ofelt analysis ascertains the presence of Eu{sup 3+} in a highly asymmetric environment. The phosphor exhibits good thermal stability (92.5% at 100 °C and 84.1% at 180 °C). The red LED prototype fabricated by opyimized-composition K{sub 2}Y(WO{sub 4})(PO{sub 4}):0.70Eu{sup 3+} phosphor and 395 nm-emitting InGaN chips exhibit bright red emission. The results indicate that the K{sub 2}Y(WO{sub 4})(PO{sub 4}):Eu{sup 3+} phosphors are promising red phosphors for NUV LED.« less

High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Final Technical Report, 4 March 1998--15 October 2001

DOE Office of Scientific and Technical Information (OSTI.GOV)

Compaan, A. D.; Deng, X.; Bohn, R. G.

2003-10-01

This is the final report covering about 42 months of this subcontract for research on high-efficiency CdTe-based thin-film solar cells and on high-efficiency a-Si-based thin-film solar cells. Phases I and II have been extensively covered in two Annual Reports. For this Final Report, highlights of the first two Phases will be provided and then detail will be given on the last year and a half of Phase III. The effort on CdTe-based materials is led by Prof. Compaan and emphasizes the use of sputter deposition of the semiconductor layers in the fabrication of CdS/CdTe cells. The effort on high-efficiency a-Simore » materials is led by Prof. Deng and emphasizes plasma-enhanced chemical vapor deposition for cell fabrication with major efforts on triple-junction devices.« less

High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Y.; Li, X.; Xu, P.

2015-02-02

We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm. The dominant emission, detectable at ultralow (<1 μA) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25 μA current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter < 250 nm), this trend breaks down due to heat accumulation in the NWs. Our simple device architecturemore » offers a potentially cost-effective scheme to fabricate high efficiency Schottky junction-based UV-LEDs.« less

Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: Augmented light output of GaN UV-LED

PubMed Central

Jeong, Hyun; Jeong, Seung Yol; Park, Doo Jae; Jeong, Hyeon Jun; Jeong, Sooyeon; Han, Joong Tark; Jeong, Hee Jin; Yang, Sunhye; Kim, Ho Young; Baeg, Kang-Jun; Park, Sae June; Ahn, Yeong Hwan; Suh, Eun-Kyung; Lee, Geon-Woong; Lee, Young Hee; Jeong, Mun Seok

2015-01-01

GaN-based ultraviolet (UV) LEDs are widely used in numerous applications, including white light pump sources and high-density optical data storage. However, one notorious issue is low hole injection rate in p-type transport layer due to poorly activated holes and spontaneous polarization, giving rise to insufficient light emission efficiency. Therefore, improving hole injection rate is a key step towards high performance UV-LEDs. Here, we report a new method of suppressing spontaneous polarization in p-type region to augment light output of UV-LEDs. This was achieved by simply passivating graphene oxide (GO) on top of the fully fabricated LED. The dipole layer formed by the passivated GO enhanced hole injection rate by suppressing spontaneous polarization in p-type region. The homogeneity of electroluminescence intensity in active layers was improved due to band filling effect. As a consequence, the light output was enhanced by 60% in linear current region. Our simple approach of suppressing spontaneous polarization of p-GaN using GO passivation disrupts the current state of the art technology and will be useful for high-efficiency UV-LED technology. PMID:25586148

NDIR gas sensing using high performance AlInSb mid-infrared LEDs as light source

NASA Astrophysics Data System (ADS)

Camargo, E. G.; Goda, Y.; Morohara, O.; Fujita, H.; Geka, H.; Ueno, K.; Shibata, Y.; Kuze, N.

2017-08-01

In this paper, we report the performance of room temperature operated mid-infrared light emitting diode (LED) with an InSb buffer layer and AlInSb active/barrier layers, which showed to be suitable for non-dispersive infrared (NDIR) gas sensing. Characterization of the LED was performed and we found that good carrier confinement and crystalline quality was responsible for its high performance. High efficiency light extraction was obtained by adopting backside emission architecture together with surface roughening treatment and TiO2 anti-reflection coating. The fabricated AlInSb LED showed 75% higher power conversion efficiency when compared with a commercially available device. The developed LED, together with a commercially available infrared (IR) detector equipped with band-pass optical filter (AK9710, manufactured by Asahi Kasei Microdevices) were coupled into a mirror system forming a light path length of 80 mm, which was tested for CO2 gas sensing. For a non-absorbing environment, sensor output of 8 nA was obtained by driving the LED with peak current of 100 mA and, by exposing the system at CO2 concentration of 1000 ppm signal reduction due to absorbance around 12% was obtained.

Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: augmented light output of GaN UV-LED.

PubMed

Jeong, Hyun; Jeong, Seung Yol; Park, Doo Jae; Jeong, Hyeon Jun; Jeong, Sooyeon; Han, Joong Tark; Jeong, Hee Jin; Yang, Sunhye; Kim, Ho Young; Baeg, Kang-Jun; Park, Sae June; Ahn, Yeong Hwan; Suh, Eun-Kyung; Lee, Geon-Woong; Lee, Young Hee; Jeong, Mun Seok

2015-01-14

GaN-based ultraviolet (UV) LEDs are widely used in numerous applications, including white light pump sources and high-density optical data storage. However, one notorious issue is low hole injection rate in p-type transport layer due to poorly activated holes and spontaneous polarization, giving rise to insufficient light emission efficiency. Therefore, improving hole injection rate is a key step towards high performance UV-LEDs. Here, we report a new method of suppressing spontaneous polarization in p-type region to augment light output of UV-LEDs. This was achieved by simply passivating graphene oxide (GO) on top of the fully fabricated LED. The dipole layer formed by the passivated GO enhanced hole injection rate by suppressing spontaneous polarization in p-type region. The homogeneity of electroluminescence intensity in active layers was improved due to band filling effect. As a consequence, the light output was enhanced by 60% in linear current region. Our simple approach of suppressing spontaneous polarization of p-GaN using GO passivation disrupts the current state of the art technology and will be useful for high-efficiency UV-LED technology.

Integrated LED-based luminaire for general lighting

DOEpatents

Dowling, Kevin J.; Lys, Ihor A.; Williamson, Ryan C.; Roberge, Brian; Roberts, Ron; Morgan, Frederick; Datta, Michael Jay; Mollnow, Tomas Jonathan

2016-08-30

Lighting apparatus and methods employing LED light sources are described. The LED light sources are integrated with other components in the form of a luminaire or other general purpose lighting structure. Some of the lighting structures are formed as Parabolic Aluminum Reflector (PAR) luminaires, allowing them to be inserted into conventional sockets. The lighting structures display beneficial operating characteristics, such as efficient operation, high thermal dissipation, high output, and good color mixing.

Integrated LED-based luminare for general lighting

DOEpatents

Dowling, Kevin J.; Lys, Ihor A.; Roberge, Brian; Williamson, Ryan C.; Roberts, Ron; Datta, Michael; Mollnow, Tomas; Morgan, Frederick M.

2013-03-05

Lighting apparatus and methods employing LED light sources are described. The LED light sources are integrated with other components in the form of a luminaire or other general purpose lighting structure. Some of the lighting structures are formed as Parabolic Aluminum Reflector (PAR) luminaires, allowing them to be inserted into conventional sockets. The lighting structures display beneficial operating characteristics, such as efficient operation, high thermal dissipation, high output, and good color mixing.

A receptor-targeted nanocomplex vector system optimized for respiratory gene transfer.

PubMed

Tagalakis, Aristides D; McAnulty, Robin J; Devaney, James; Bottoms, Stephen E; Wong, John B; Elbs, Martin; Writer, Michele J; Hailes, Helen C; Tabor, Alethea B; O'Callaghan, Christopher; Jaffe, Adam; Hart, Stephen L

2008-05-01

Synthetic vectors for cystic fibrosis (CF) gene therapy are required that efficiently and safely transfect airway epithelial cells, rather than alveolar epithelial cells or macrophages, and that are nonimmunogenic, thus allowing for repeated delivery. We have compared several vector systems against these criteria including GL67, polyethylenimine (PEI) 22 and 25 kd and two new, synthetic vector formulations, comprising a cationic, receptor-targeting peptide K(16)GACSERSMNFCG (E), and the cationic liposomes (L) DHDTMA/DOPE or DOSEP3/DOPE. The lipid and peptide formulations self assemble into receptor-targeted nanocomplexes (RTNs) LED-1 and LED-2, respectively, on mixing with plasmid (D). LED-1 transfected airway epithelium efficiently, while LED-2 and GL67 preferentially transfected alveolar cells. PEI transfected airway epithelial cells with high efficiency, but was more toxic to the mice than the other formulations. On repeat dosing, LED-1 was equally as effective as the single dose, while GL67 was 30% less effective and PEI 22 kd displayed a 90% reduction of efficiency on repeated delivery. LED-1 thus was the only formulation that fulfilled the criteria for a CF gene therapy vector while GL67 and LED-2 may be appropriate for other respiratory diseases. Opportunities for PEI depend on a solution to its toxicity problems. LED-1 formulations were stable to nebulization, the most appropriate delivery method for CF.

Highly Efficient Light-Emitting Diodes of Colloidal Metal-Halide Perovskite Nanocrystals beyond Quantum Size.

PubMed

Kim, Young-Hoon; Wolf, Christoph; Kim, Young-Tae; Cho, Himchan; Kwon, Woosung; Do, Sungan; Sadhanala, Aditya; Park, Chan Gyung; Rhee, Shi-Woo; Im, Sang Hyuk; Friend, Richard H; Lee, Tae-Woo

2017-07-25

Colloidal metal-halide perovskite quantum dots (QDs) with a dimension less than the exciton Bohr diameter D B (quantum size regime) emerged as promising light emitters due to their spectrally narrow light, facile color tuning, and high photoluminescence quantum efficiency (PLQE). However, their size-sensitive emission wavelength and color purity and low electroluminescence efficiency are still challenging aspects. Here, we demonstrate highly efficient light-emitting diodes (LEDs) based on the colloidal perovskite nanocrystals (NCs) in a dimension > D B (regime beyond quantum size) by using a multifunctional buffer hole injection layer (Buf-HIL). The perovskite NCs with a dimension greater than D B show a size-irrespective high color purity and PLQE by managing the recombination of excitons occurring at surface traps and inside the NCs. The Buf-HIL composed of poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) and perfluorinated ionomer induces uniform perovskite particle films with complete film coverage and prevents exciton quenching at the PEDOT:PSS/perovskite particle film interface. With these strategies, we achieved a very high PLQE (∼60.5%) in compact perovskite particle films without any complex post-treatments and multilayers and a high current efficiency of 15.5 cd/A in the LEDs of colloidal perovskite NCs, even in a simplified structure, which is the highest efficiency to date in green LEDs that use colloidal organic-inorganic metal-halide perovskite nanoparticles including perovskite QDs and NCs. These results can help to guide development of various light-emitting optoelectronic applications based on perovskite NCs.

Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Monavarian, M.; Rashidi, A.; Aragon, A. A.; Oh, S. H.; Rishinaramangalam, A. K.; DenBaars, S. P.; Feezell, D.

2018-01-01

High-speed InGaN/GaN blue light-emitting diodes (LEDs) are needed for future gigabit-per-second visible-light communication systems. Large LED modulation bandwidths are typically achieved at high current densities, with reports close to 1 GHz bandwidth at current densities ranging from 5 to 10 kA/cm2. However, the internal quantum efficiency (IQE) of InGaN/GaN LEDs is quite low at high current densities due to the well-known efficiency droop phenomenon. Here, we show experimentally that nonpolar and semipolar orientations of GaN enable higher modulation bandwidths at low current densities where the IQE is expected to be higher and power dissipation is lower. We experimentally compare the modulation bandwidth vs. current density for LEDs on nonpolar (10 1 ¯ 0 ), semipolar (20 2 ¯ 1 ¯) , and polar (" separators="|0001 ) orientations. In agreement with wavefunction overlap considerations, the experimental results indicate a higher modulation bandwidth for the nonpolar and semipolar LEDs, especially at relatively low current densities. At 500 A/cm2, the nonpolar LED has a 3 dB bandwidth of ˜1 GHz, while the semipolar and polar LEDs exhibit bandwidths of 260 MHz and 75 MHz, respectively. A lower carrier density for a given current density is extracted from the RF measurements for the nonpolar and semipolar LEDs, consistent with the higher wavefunction overlaps in these orientations. At large current densities, the bandwidth of the polar LED approaches that of the nonpolar and semipolar LEDs due to coulomb screening of the polarization field. The results support using nonpolar and semipolar orientations to achieve high-speed LEDs at low current densities.

Design considerations for highly effective fluorescence excitation and detection optical systems for molecular diagnostics

NASA Astrophysics Data System (ADS)

Kasper, Axel; Van Hille, Herbert; Kuk, Sola

2018-02-01

Modern instruments for molecular diagnostics are continuously optimized for diagnostic accuracy, versatility and throughput. The latest progress in LED technology together with tailored optics solutions allows developing highly efficient photonics engines perfectly adapted to the sample under test. Super-bright chip-on-board LED light sources are a key component for such instruments providing maximum luminous intensities in a multitude of narrow spectral bands. In particular the combination of white LEDs with other narrow band LEDs allows achieving optimum efficiency outperforming traditional Xenon light sources in terms of energy consumption, heat dissipation in the system, and switching time between spectral channels. Maximum sensitivity of the diagnostic system can only be achieved with an optimized optics system for the illumination and imaging of the sample. The illumination beam path must be designed for optimum homogeneity across the field while precisely limiting the angular distribution of the excitation light. This is a necessity for avoiding spill-over to the detection beam path and guaranteeing the efficiency of the spectral filtering. The imaging optics must combine high spatial resolution, high light collection efficiency and optimized suppression of excitation light for good signal-to-noise ratio. In order to achieve minimum cross-talk between individual wells in the sample, the optics design must also consider the generation of stray light and the formation of ghost images. We discuss what parameters and limitations have to be considered in an integrated system design approach covering the full path from the light source to the detector.

Efficient resource allocation scheme for visible-light communication system

NASA Astrophysics Data System (ADS)

Kim, Woo-Chan; Bae, Chi-Sung; Cho, Dong-Ho; Shin, Hong-Seok; Jung, D. K.; Oh, Y. J.

2009-01-01

A visible-light communication utilizing LED has many advantagies such as visibility of information, high SNR (Signal to Noise Ratio), low installation cost, usage of existing illuminators, and high security. Furthermore, exponentially increasing needs and quality of LED have helped the development of visible-light communication. The visibility is the most attractive property in visible-light communication system, but it is difficult to ensure visibility and transmission efficiency simultaneously during initial access because of the small amount of initial access process signals. In this paper, we propose an efficient resource allocation scheme at initial access for ensuring visibility with high resource utilization rate and low data transmission failure rate. The performance has been evaluated through the numerical analysis and simulation results.

BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs

NASA Astrophysics Data System (ADS)

Williams, Logan; Kioupakis, Emmanouil

2017-11-01

InGaN-based visible light-emitting diodes (LEDs) find commercial applications for solid-state lighting and displays, but lattice mismatch limits the thickness of InGaN quantum wells that can be grown on GaN with high crystalline quality. Since narrower wells operate at a higher carrier density for a given current density, they increase the fraction of carriers lost to Auger recombination and lower the efficiency. The incorporation of boron, a smaller group-III element, into InGaN alloys is a promising method to eliminate the lattice mismatch and realize high-power, high-efficiency visible LEDs with thick active regions. In this work, we apply predictive calculations based on hybrid density functional theory to investigate the thermodynamic, structural, and electronic properties of BInGaN alloys. Our results show that BInGaN alloys with a B:In ratio of 2:3 are better lattice matched to GaN compared to InGaN and, for indium fractions less than 0.2, nearly lattice matched. Deviations from Vegard's law appear as bowing of the in-plane lattice constant with respect to composition. Our thermodynamics calculations demonstrate that the solubility of boron is higher in InGaN than in pure GaN. Varying the Ga mole fraction while keeping the B:In ratio constant enables the adjustment of the (direct) gap in the 1.75-3.39 eV range, which covers the entire visible spectrum. Holes are strongly localized in non-bonded N 2p states caused by local bond planarization near boron atoms. Our results indicate that BInGaN alloys are promising for fabricating nitride heterostructures with thick active regions for high-power, high-efficiency LEDs.

High-Modulation-Speed LEDs Based on III-Nitride

NASA Astrophysics Data System (ADS)

Chen, Hong

III-nitride InGaN light-emitting diodes (LEDs) enable wide range of applications in solid-state lighting, full-color displays, and high-speed visible-light communication. Conventional InGaN quantum well LEDs grown on polar c-plane substrate suffer from quantum confined Stark effect due to the large internal polarization-related fields, leading to a reduced radiative recombination rate and device efficiency, which limits the performance of InGaN LEDs in high-speed communication applications. To circumvent these negative effects, non-trivial-cavity designs such as flip-chip LEDs, metallic grating coated LEDs are proposed. This oral defense will show the works on the high-modulation-speed LEDs from basic ideas to applications. Fundamental principles such as rate equations for LEDs/laser diodes (LDs), plasmonic effects, Purcell effects will be briefly introduced. For applications, the modal properties of flip-chip LEDs are solved by implementing finite difference method in order to study the modulation response. The emission properties of highly polarized InGaN LEDs coated by metallic gratings are also investigated by finite difference time domain method.

Comparative study on luminescence extraction strategies of LED by large-scale fabrication of nanopillar and nanohole structures

NASA Astrophysics Data System (ADS)

Guo, Wei; Li, Junmei; Sheikhi, Moheb; Jiang, Jie’an; Yang, Zhenhai; Li, Hongwei; Guo, Shiping; Sheng, Jiang; Sun, Jie; Bo, Baoxue; Ye, Jichun

2018-06-01

Light extraction and current injection are two important considerations in the development of high efficiency light-emitting-diodes (LEDs), but usually cannot be satisfied simultaneously in nanostructure patterned devices. In this work, we investigated near-UV LEDs with nanopillar and nanohole patterns to improve light extraction efficiency. Photoluminescence (PL) intensities were enhanced by 8.0 and 4.1 times for nanopillar and nanohole LEDs compared to that of planar LED. Nanopillar LED exhibits higher PL emission than that of the nanohole LED, attributing to a convex shape sidewall for more effective outward light scattering, and reduction of quantum-confined-stark-effect owing to strain relaxation. However, nanopillar LED exhibits lower electroluminescence intensity than the nanohole sample, which calls for further optimization in carrier distributions. Experimental results were further supported by near-field electric field simulations. This work demonstrates the difference in optical and electrical behaviors between the nanopillar and nanohole LEDs, paving the way for detailed understanding on luminescence extraction mechanisms of nanostructure patterned UV emitters.

Light Emitting Diodes and Astronomy - a chance for restoration of the dark night sky - or for further loss

NASA Astrophysics Data System (ADS)

Wainscoat, Richard

2015-08-01

Across the planet, conventional light sources such as high pressure sodium, are rapidly being replaced by light emitting diodes (LEDs). As light fixtures are being replaced, there is a tremendous opportunity for restoration of dark night skies through replacement of poorly shielded fixtures by fully shielded fixtures. However, it is critically important to limit the amount of blue light from the LEDs.Sales people are strongly promoting LEDs with high correlated color temperature (CCT), such as 5000K. They are promoting them on energy efficiency grounds - higher energy efficiency is easier to sell. These LEDs have tremendous amounts of blue light near 450 nm. The photopic human eye is relatively insensitive to this blue light, but the dark adapted scotopic eye is much more sensitive, and CCDs are also very sensitive to this wavelength of light. As a consequence, both professional and amateur astronomers are very seriously impacted by high CCT LED lighting. The sodium lighting that the LEDs are replacing has relatively little blue light. Blue light is strongly scattered by air molecules in the atmosphere.Use of high CCT LED lighting will cause further deterioration of night sky quality.In contrast, use of LED lighting with low CCT (e.g., 2400K or 2700K), or use of filters to remove the blue light, can restore the dark night sky. LED lighting is much easier to direct, meaning that an area such as a roadway can be lit with many less lumens with LEDs compared to conventional lights such as high pressure sodium. And use of fully shielded fixtures will eliminate direct uplighting.It is therefore critically important at this time to require that all new LED lighting be fully shielded, and for strong limits to be placed the amount of blue light from LEDs. This is crucial near observatories, but is important everywhere.

Study on efficiency droop in InGaN/GaN light-emitting diodes based on differential carrier lifetime analysis

NASA Astrophysics Data System (ADS)

Meng, Xiao; Wang, Lai; Hao, Zhibiao; Luo, Yi; Sun, Changzheng; Han, Yanjun; Xiong, Bing; Wang, Jian; Li, Hongtao

2016-01-01

Efficiency droop is currently one of the most popular research problems for GaN-based light-emitting diodes (LEDs). In this work, a differential carrier lifetime measurement system is optimized to accurately determine carrier lifetimes (τ) of blue and green LEDs under different injection current (I). By fitting the τ-I curves and the efficiency droop curves of the LEDs according to the ABC carrier rate equation model, the impact of Auger recombination and carrier leakage on efficiency droop can be characterized simultaneously. For the samples used in this work, it is found that the experimental τ-I curves cannot be described by Auger recombination alone. Instead, satisfactory fitting results are obtained by taking both carrier leakage and carriers delocalization into account, which implies carrier leakage plays a more significant role in efficiency droop at high injection level.

RGB-Stack Light Emitting Diode Modules with Transparent Glass Circuit Board and Oil Encapsulation

PubMed Central

Li, Ying-Chang; Chang, Yuan-Hsiao; Singh, Preetpal; Chang, Liann-Be; Yeh, Der-Hwa; Chao, Ting-Yu; Jian, Si-Yun; Li, Yu-Chi; Lai, Chao-Sung; Ying, Shang-Ping

2018-01-01

The light emitting diode (LED) is widely used in modern solid-state lighting applications, and its output efficiency is closely related to the submounts’ material properties. Most submounts used today, such as low-power printed circuit boards (PCBs) or high-power metal core printed circuit boards (MCPCBs), are not transparent and seriously decrease the output light extraction. To meet the requirements of high light output and better color mixing, a three-dimensional (3-D) stacked flip-chip (FC) LED module is proposed and demonstrated. To realize light penetration and mixing, the mentioned 3-D vertically stacking RGB LEDs use transparent glass as FC package submounts called glass circuit boards (GCB). Light emitted from each GCB stacked LEDs passes through each other and thus exhibits good output efficiency and homogeneous light-mixing characteristics. In this work, the parasitic problem of heat accumulation, which caused by the poor thermal conductivity of GCB and leads to a serious decrease in output efficiency, is solved by a proposed transparent cooling oil encapsulation (OCP) method. PMID:29494534

RGB-Stack Light Emitting Diode Modules with Transparent Glass Circuit Board and Oil Encapsulation.

PubMed

Li, Ying-Chang; Chang, Yuan-Hsiao; Singh, Preetpal; Chang, Liann-Be; Yeh, Der-Hwa; Chao, Ting-Yu; Jian, Si-Yun; Li, Yu-Chi; Tan, Cher Ming; Lai, Chao-Sung; Chow, Lee; Ying, Shang-Ping

2018-03-01

The light emitting diode (LED) is widely used in modern solid-state lighting applications, and its output efficiency is closely related to the submounts' material properties. Most submounts used today, such as low-power printed circuit boards (PCBs) or high-power metal core printed circuit boards (MCPCBs), are not transparent and seriously decrease the output light extraction. To meet the requirements of high light output and better color mixing, a three-dimensional (3-D) stacked flip-chip (FC) LED module is proposed and demonstrated. To realize light penetration and mixing, the mentioned 3-D vertically stacking RGB LEDs use transparent glass as FC package submounts called glass circuit boards (GCB). Light emitted from each GCB stacked LEDs passes through each other and thus exhibits good output efficiency and homogeneous light-mixing characteristics. In this work, the parasitic problem of heat accumulation, which caused by the poor thermal conductivity of GCB and leads to a serious decrease in output efficiency, is solved by a proposed transparent cooling oil encapsulation (OCP) method.

Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction

NASA Astrophysics Data System (ADS)

Yonkee, B. P.; Young, E. C.; DenBaars, S. P.; Nakamura, S.; Speck, J. S.

2016-11-01

A molecular beam epitaxy regrowth technique was demonstrated on standard industrial patterned sapphire substrate light-emitting diode (LED) epitaxial wafers emitting at 455 nm to form a GaN tunnel junction. By using an HF pretreatment on the wafers before regrowth, a voltage of 3.08 V at 20 A/cm2 was achieved on small area devices. A high extraction package was developed for comparison with flip chip devices which utilize an LED floating in silicone over a BaSO4 coated header and produced a peak external quantum efficiency (EQE) of 78%. A high reflectivity mirror was designed using a seven-layer dielectric coating backed by aluminum which has a calculated angular averaged reflectivity over 98% between 400 and 500 nm. This was utilized to fabricate a flip chip LED which had a peak EQE and wall plug efficiency of 76% and 73%, respectively. This flip chip could increase light extraction over a traditional flip chip LED due to the increased reflectivity of the dielectric based mirror.

"Light-box" accelerated growth of poinsettias: LED-only illumination

NASA Astrophysics Data System (ADS)

Weerasuriya, Charitha; Detez, Stewart; Hock Ng, Soon; Hughes, Andrew; Callaway, Michael; Harrison, Iain; Katkus, Tomas; Juodkazis, Saulius

2018-01-01

For the current commercialized agricultural industry which requires a reduced product lead time to customer and supply all year round, an artificial light emitting diodes (LEDs)-based illumination has high potential due to high efficiency of electrical-to-light conversion. The main advantage of the deployed Red Green Blue Amber LED lighting system is colour mixing capability, which means ability to generate all the colours in the spectrum by using three or four primary colours LEDs. The accelerated plant growth was carried out in a "light-box" which was made to generate an artificial day/night cycle by moving the colour mixing ratio along the colour temperature curve of the chromaticity diagram. The control group of plants form the same initial batch was grown on the same shelf in a greenhouse at the same conditions with addition of artificial illumination by incandescent lamps for few hours. Costs and efficiency projections of LED lamps for horticultural applications is discussed together with required capital investment. The total cost of the "light-box" including LED lamps and electronics was 850 AUD.

Design of multisegmented freeform lens for LED fishing/working lamp with high efficiency.

PubMed

Lai, Min-Feng; Anh, Nguyen Doan Quoc; Gao, Jia-Zhi; Ma, Hsin-Yi; Lee, Hsiao-Yi

2015-10-01

A novel LED fishing/working light is proposed to enhance the lighting efficiency of a fishing boat. The study is focused on the freeform secondary lens design so as to create a lamp that attracts fish and sheds light on the deck for the crew's work. The experimental results show that the proposed multisegmented freeform lens can deliver the proposed aim, giving 3 times as much illuminating power as the traditional high-intensity discharge fishing lamp does with the same input of electrical power.

Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures.

PubMed

Ryu, Han-Youl

2014-02-04

Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations. LEE of deep UV LEDs is limited by strong light absorption in the p-GaN contact layer and total internal reflection. The nanorod structure is found to be quite effective in increasing LEE of deep UV LEDs especially for the transverse magnetic (TM) mode. In the nanorod LED, strong dependence of LEE on structural parameters such as the diameter of a nanorod and the p-GaN thickness is observed, which can be attributed to the formation of resonant modes inside the nanorod structure. Simulation results show that, when the structural parameters of the nanorod LED are optimized, LEE can be higher than 50% and 60% for the transverse electric (TE) and TM modes, respectively. The nanorod structure is expected to be a good candidate for the application to future high-efficiency deep UV LEDs. PACS: 41.20.Jb; 42.72.Bj; 85.60.Jb.

Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures

PubMed Central

2014-01-01

Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations. LEE of deep UV LEDs is limited by strong light absorption in the p-GaN contact layer and total internal reflection. The nanorod structure is found to be quite effective in increasing LEE of deep UV LEDs especially for the transverse magnetic (TM) mode. In the nanorod LED, strong dependence of LEE on structural parameters such as the diameter of a nanorod and the p-GaN thickness is observed, which can be attributed to the formation of resonant modes inside the nanorod structure. Simulation results show that, when the structural parameters of the nanorod LED are optimized, LEE can be higher than 50% and 60% for the transverse electric (TE) and TM modes, respectively. The nanorod structure is expected to be a good candidate for the application to future high-efficiency deep UV LEDs. PACS 41.20.Jb; 42.72.Bj; 85.60.Jb PMID:24495598

Two-color light-emitting diodes with polarization-sensitive high extraction efficiency based on graphene

NASA Astrophysics Data System (ADS)

H, Sattarian; S, Shojaei; E, Darabi

2016-05-01

In the present study, graphene photonic crystals are employed to enhance the light extraction efficiency (LEE) of two-color, red and blue, light-emitting diode (LED). The transmission characteristics of one-dimensional (1D) Fibonacci graphene photonic crystal LED (FGPC-LED) are investigated by using the transfer matrix method and the scaling study is presented. We analyzed the influence of period, thickness, and permittivity in the structure to enhance the LEE. The transmission spectrum of 1D FGPC has been optimized in detail. In addition, the effects of the angle of incidence and the state of polarization are investigated. As the main result, we found the optimum values of relevant parameters to enhance the extraction of red and blue light from an LED as well as provide perfect omnidirectional and high peak transmission filters for the TE and TM modes.

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

NASA Astrophysics Data System (ADS)

Meneghini, M.; Trivellin, N.; Berti, M.; Cesca, T.; Gasparotto, A.; Vinattieri, A.; Bogani, F.; Zhu, D.; Humphreys, C. J.; Meneghesso, G.; Zanoni, E.

2013-03-01

The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples.

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

PubMed Central

Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

2015-01-01

High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This “compliant” buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 105 cm−2. In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6” wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors. PMID:26329829

The effect of 580 nm-based-LED mixed light on growth, adipose deposition, skeletal development, and body temperature of chickens.

PubMed

Yang, Yefeng; Zhen, Chenghuang; Yang, Bo; Yu, Yonghua; Pan, Jinming

2018-06-01

Though previous study indicated that the 580 nm-yellow-LED-light showed an stimulating effect on growth of chickens, the low luminous efficiency of the yellow LED light cannot reflect the advantage of energy saving. In present study, the cool white LED chips and yellow LED chips have been combined to fabricate the white × yellow mixed LED light, with an enhanced luminous efficiency. A total 300 newly hatched chickens were reared under various mixed LED light. The results indicated that the white × yellow mixed LED light had "double-edged sword" effects on bird's body weight, bone development, adipose deposition, and body temperature, depending on variations in ratios of yellow component. Low yellow ratio of mixed LED light (Low group) inhibited body weight, whereas medium and high yellow ratio of mixed LED light (Medium and High groups) promoted body weight, compared with white LED light (White group). A progressive change in yellow component gave rise to consistent changes in body weight over the entire experiment. Moreover, a positive relationship was observed between yellow component and feed conversion ratio. High group-treated birds had greater relative abdominal adipose weight than Medium group-treated birds (P = 0.048), whereas Medium group-treated birds had greater relative abdominal adipose weight than Low group-treated birds (P = 0.044). We found that mixed light improved body weight by enhancing skeletal development (R 2  = 0.5023, P = 0.0001) and adipose deposition (R 2  = 0.6012, P = 0.0001). Birds in the Medium, High and Yellow groups attained significantly higher surface temperatures compared with the White group (P = 0.010). The results suggest that the application of the mixed light with high level of yellow component can be used successfully to improve growth and productive performance in broilers. Copyright © 2018. Published by Elsevier B.V.

Performance Limits of Non-Line-of-Sight Optical Communications

DTIC Science & Technology

2015-05-01

high efficiency solar blind photo detectors. In this project, we address the main challenges towards optimizing the UV communication system...LEDs), solar blind filters, and high efficiency solar blind photo detectors. In this project, we address the main challenges towards optimizing the UV...solar blind filters, and high efficiency solar blind photo detectors. In this project, we address the main challenges towards optimizing the UV

Freeform lens design for LED collimating illumination.

PubMed

Chen, Jin-Jia; Wang, Te-Yuan; Huang, Kuang-Lung; Liu, Te-Shu; Tsai, Ming-Da; Lin, Chin-Tang

2012-05-07

We present a simple freeform lens design method for an application to LED collimating illumination. The method is derived from a basic geometric-optics analysis and construction approach. By using this method, a highly collimating lens with LED chip size of 1.0 mm × 1.0 mm and optical simulation efficiency of 86.5% under a view angle of ± 5 deg is constructed. To verify the practical performance of the lens, a prototype of the collimator lens is also made, and an optical efficiency of 90.3% with a beam angle of 4.75 deg is measured.

Materials and Designs for High-Efficacy LED Light Engines

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ibbetson, James; Gresback, Ryan

Cree, Inc. conducted a narrow-band downconverter (NBD) materials development and implementation program which will lead to warm-white LED light engines with enhanced efficacy via improved spectral efficiency with respect to the human eye response. New red (600-630nm) NBD materials could result in as much as a 20% improvement in warm-white efficacy at high color quality relative to conventional phosphor-based light sources. Key program innovations included: high quantum yield; narrow peak width; minimized component-level losses due to “cross-talk” and light scattering among red and yellow-green downconverters; and improved reliability to reach parity with conventional phosphors. NBD-enabled downconversion efficiency gains relative tomore » conventional phosphors yielded an end-of-project LED light engine efficacy of >160 lm/W at room temperature and 35 A/cm2, with a correlated color temperature (CCT) of ~3500K and >90 CRI (Color Rending Index). NBD-LED light engines exhibited equivalent luminous flux and color point maintenance at >1,000 hrs. of highly accelerated reliability testing as conventional phosphor LEDs. A demonstration luminaire utilizing an NBD-based LED light engine had a steady-state system efficacy of >150 lm/W at ~3500K and >90 CRI, which exceeded the 2014 DOE R&D Plan luminaire milestone for FY17 of >150 lm/W at just 80 CRI.« less

A Strategy for Architecture Design of Crystalline Perovskite Light-Emitting Diodes with High Performance.

PubMed

Shi, Yifei; Wu, Wen; Dong, Hua; Li, Guangru; Xi, Kai; Divitini, Giorgio; Ran, Chenxin; Yuan, Fang; Zhang, Min; Jiao, Bo; Hou, Xun; Wu, Zhaoxin

2018-06-01

All present designs of perovskite light-emitting diodes (PeLEDs) stem from polymer light-emitting diodes (PLEDs) or perovskite solar cells. The optimal structure of PeLEDs can be predicted to differ from PLEDs due to the different fluorescence dynamics and crystallization between perovskite and polymer. Herein, a new design strategy and conception is introduced, "insulator-perovskite-insulator" (IPI) architecture tailored to PeLEDs. As examples of FAPbBr 3 and MAPbBr 3 , it is experimentally shown that the IPI structure effectively induces charge carriers into perovskite crystals, blocks leakage currents via pinholes in the perovskite film, and avoids exciton quenching simultaneously. Consequently, as for FAPbBr 3 , a 30-fold enhancement in the current efficiency of IPI-structured PeLEDs compared to a control device with poly(3,4ethylenedioxythiophene):poly(styrene sulfonate) as hole-injection layer is achieved-from 0.64 to 20.3 cd A -1 -while the external quantum efficiency is increased from 0.174% to 5.53%. As the example of CsPbBr 3 , compared with the control device, both current efficiency and lifetime of IPI-structured PeLEDs are improved from 1.42 and 4 h to 9.86 cd A -1 and 96 h. This IPI architecture represents a novel strategy for the design of light-emitting didoes based on various perovskites with high efficiencies and stabilities. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Design of a lighting system with high-power LEDs, large area electronics, and light management structure in the LUMENTILE European project

NASA Astrophysics Data System (ADS)

Carraro, L.; Simonetta, M.; Benetti, G.; Tramonte, A.; Capelli, G.; Benedetti, M.; Randone, E. M.; Ylisaukko-oja, A.; Keränen, K.; Facchinetti, T.; Giuliani, G.

2017-02-01

LUMENTILE (LUMinous ElectroNic TILE) is a project funded by the European Commission with the goal of developing a luminous tile with novel functionalities, capable of changing its color and interact with the user. Applications include interior/exterior tile for walls and floors covering, high-efficiency luminaries, and advertising under the form of giant video screens. High overall electrical efficiency of the tile is mandatory, as several millions of square meters are foreseen to be installed each year. Demand is for high uniformity of the illumination of the top tile surface, and for high optical extraction efficiency. These features are achieved by smart light management, using a new approach based on light guiding slab and spatially selective light extraction obtained using both diffusion and/or reflection from the top and bottom interfaces of the optical layer. Planar and edge configurations for the RGB LEDs are considered and compared. A square shape with side length from 20cm to 60cm is considered for the tiles. The electronic circuit layout must optimize the electrical efficiency, and be compatible with low-cost roll-to-roll production on flexible substrates. LED heat management is tackled by using dedicated solutions that allow operation in thermally harsh environment. An approach based on OLEDs has also been considered, still needing improvement on emitted power and ruggedness.

Smooth light extraction in lighting optical fibre

NASA Astrophysics Data System (ADS)

Fernandez-Balbuena, A. A.; Vazquez-Molini, D.; Garcia-Botella, A.; Martinez-Anton, J. C.; Bernabeu, E.

2011-10-01

Recent advances in LED technology have relegated the use of optical fibre for general lighting, but there are several applications where it can be used as scanners lighting systems, daylight, cultural heritage lighting, sensors, explosion risky spaces, etc. Nowadays the use of high intensity LED to inject light in optical fibre increases the possibility of conjugate fibre + LED for lighting applications. New optical fibres of plastic materials, high core diameter up to 12.6 mm transmit light with little attenuation in the visible spectrum but there is no an efficient and controlled way to extract the light during the fibre path. Side extracting fibres extracts all the light on 2π angle so is not well suited for controlled lighting. In this paper we present an extraction system for mono-filament optical fibre which provides efficient and controlled light distribution. These lighting parameters can be controlled with an algorithm that set the position, depth and shape of the optical extraction system. The extraction system works by total internal reflection in the core of the fibre with high efficiency and low cost. A 10 m length prototype is made with 45° sectional cuts in the fibre core as extraction system. The system is tested with a 1W white LED illuminator in one side.

Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

NASA Astrophysics Data System (ADS)

Zhang, F.; Can, N.; Hafiz, S.; Monavarian, M.; Das, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2015-05-01

The effect of δ-doping of In0.06Ga0.94N barriers with Mg on the quantum efficiency of blue light-emitting-diodes (LEDs) with active regions composed of 6 (hex) 3-nm In0.15Ga0.85N is investigated. Compared to the reference sample, δ-doping of the first barrier on the n-side of the LED structure improves the peak external quantum efficiency (EQE) by 20%, owing to the increased hole concentration in the wells adjacent to the n-side, as confirmed by numerical simulations of carrier distributions across the active region. Doping the second barrier, in addition to the first one, did not further enhance the EQE, which likely indicates compensation of improved hole injection by degradation of the active region quality due to Mg doping. Both LEDs with Mg δ-doped barriers effectively suppress the drop of efficiency at high injection when compared to the reference sample, and the onset of EQE peak roll-off shifts from ˜80 A/cm2 in the reference LED to ˜120 A/cm2 in the LEDs with Mg δ-doped barriers.

Manufacturing polymer light emitting diode with high luminance efficiency by solution process

NASA Astrophysics Data System (ADS)

Kim, Miyoung; Jo, SongJin; Yang, Ho Chang; Yoon, Dang Mo; Kwon, Jae-Taek; Lee, Seung-Hyun; Choi, Ju Hwan; Lee, Bum-Joo; Shin, Jin-Koog

2012-06-01

While investigating polymer light emitting diodes (polymer-LEDs) fabricated by solution process, surface roughness influences electro-optical (E-O) characteristics. We expect that E-O characteristics such as luminance and power efficiency related to surface roughness and layer thickness of emitting layer with poly-9-Vinylcarbazole. In this study, we fabricated polymer organic light emitting diodes by solution process which guarantees easy, eco-friendly and low cost manufacturing for flexible display applications. In order to obtain high luminescence efficiency, E-O characteristics of these devices by varying parameters for printing process have been investigated. Therefore, we optimized process condition for polymer-LEDs by adjusting annealing temperatures of emission, thickness of emission layer showing efficiency (10.8 cd/A) at 10 mA/cm2. We also checked wavelength dependent electroluminescence spectrum in order to find the correlation between the variation of efficiency and the thickness of the layer.

Scalable, Economical Fabrication Processes for Ultra-Compact Warm-White LEDs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lowes, Ted

Conventional warm-white LED component fabrication consists of a large number of sequential steps which are required to incorporate electrical, mechanical, and optical functionality into the component. Each of these steps presents cost and yield challenges which multiply throughout the entire process. Although there has been significant progress in LED fabrication over the last decade, significant advances are needed to enable further reductions in cost per lumen while not sacrificing efficacy or color quality. Cree conducted a focused 18-month program to develop a new low-cost, high-efficiency light emitting diode (LED) architecture enabled by novel large-area parallel processing technologies, reduced number ofmore » fabrication steps, and minimized raw materials use. This new scheme is expected to enable ultra-compact LED components exhibiting simultaneously high efficacy and high color quality. By the end of the program, Cree fabricated warm-white LEDs with a room-temperature “instant on” efficacy of >135 lm/W at ~3500K and 90 CRI (when driven at the DOE baseline current density of 35 A/cm2). Cree modified the conventional LED fabrication process flow in a manner that is expected to translate into simultaneously high throughput and yield for ultra-compact packages. Building on its deep expertise in LED wafer fabrication, Cree developed these ultra-compact LEDs to have no compromises in color quality or efficacy compared to their conventional counterparts. Despite their very small size, the LEDs will also be robustly electrically integrated into luminaire systems with the same attach yield as conventional packages. The versatility of the prototype high-efficacy LED architecture will likely benefit solid-state lighting (SSL) luminaire platforms ranging from bulbs to troffers. We anticipate that the prototype LEDs will particularly benefit luminaires with large numbers of distributed compact packages, such as linear and area luminaires (e.g. troffers). The fraction of total SSL luminaire cost made up by the LEDs themselves has steadily fallen over the past several years, but can still make up 30% or more of the bill of materials; the new LED design will radically lower this proportion. Ultra-compact, highly efficient LEDs with optimal distribution in the system will further benefit luminaire materials and assembly costs by reducing the complexity and volume of thermal management and optical subsystems.« less

High efficiency and enhanced ESD properties of UV LEDs by inserting p-GaN/p-AlGaN superlattice

NASA Astrophysics Data System (ADS)

Huang, Yong; Li, PeiXian; Yang, Zhuo; Hao, Yue; Wang, XiaoBo

2014-05-01

Significantly improved electrostatic discharge (ESD) properties of InGaN/GaN-based UV light-emitting diode (LED) with inserting p-GaN/p-AlGaN superlattice (p-SLs) layers (instead of p-AlGaN single layer) between multiple quantum wells and Mg-doped GaN layer are reported. The pass yield of the LEDs increased from 73.53% to 93.81% under negative 2000 V ESD pulses. In addition, the light output power (LOP) and efficiency droop at high injection current were also improved. The mechanism of the enhanced ESD properties was then investigated. After excluding the effect of capacitance modulation, high-resolution X-ray diffraction (XRD) and atomic force microscope (AFM) measurements demonstrated that the dominant mechanism of the enhanced ESD properties is the material quality improved by p-SLs, which indicated less leakage paths, rather than the current spreading improved by p-SLs.

Electrical and Luminescent Properties of Color-Changeable Organic Electroluminescent Diode Using Squarylium Dyes

NASA Astrophysics Data System (ADS)

Mori, Tatsuo; Miyachi, Kiyokazu; Kichimi, Tomoaki; Mizutani, Teruyoshi

1994-12-01

The organic electoluminescent diode (LED) with squarylium (Sq) dye-doped Alq3 changes color upon application of voltage (current). The luminescent color from the organic LED changes from red (electroluminescence (EL) of Sq dye) at low voltage to light green (EL of Alq3) at high voltage. We studied the EL efficiency and EL spectrum of organic Sq-doped Alq3 LED with various doping positions in the emission layer. Consequentially, it was clarified that Sq doping near TPD considerably reduced the EL efficiency. The EL mechanism of the organic LED was concluded to be associated with the energy transfer from the excited Alq3 to the guest dye and hole trapping of the guest dye in Alq3.

Luminescence and luminescence quenching of highly efficient Y2Mo4O15:Eu3+ phosphors and ceramics

PubMed Central

Janulevicius, Matas; Marmokas, Paulius; Misevicius, Martynas; Grigorjevaite, Julija; Mikoliunaite, Lina; Sakirzanovas, Simas; Katelnikovas, Arturas

2016-01-01

A good LED phosphor must possess strong enough absorption, high quantum yields, colour purity, and quenching temperatures. Our synthesized Y2Mo4O15:Eu3+ phosphors possess all of these properties. Excitation of these materials with near-UV or blue radiation yields bright red emission and the colour coordinates are relatively stable upon temperature increase. Furthermore, samples doped with 50% Eu3+ showed quantum yields up to 85%, what is suitable for commercial application. Temperature dependent emission spectra revealed that heavily Eu3+ doped phosphors possess stable emission up to 400 K and lose half of the efficiency only at 515 K. In addition, ceramic disks of Y2Mo4O15:75%Eu3+ phosphor with thickness of 0.71 and 0.98 mm were prepared and it turned out that they efficiently convert radiation of 375 and 400 nm LEDs to the red light, whereas combination with 455 nm LED yields purple colour. PMID:27180941

Luminescence and luminescence quenching of highly efficient Y2Mo4O15:Eu(3+) phosphors and ceramics.

PubMed

Janulevicius, Matas; Marmokas, Paulius; Misevicius, Martynas; Grigorjevaite, Julija; Mikoliunaite, Lina; Sakirzanovas, Simas; Katelnikovas, Arturas

2016-05-16

A good LED phosphor must possess strong enough absorption, high quantum yields, colour purity, and quenching temperatures. Our synthesized Y2Mo4O15:Eu(3+) phosphors possess all of these properties. Excitation of these materials with near-UV or blue radiation yields bright red emission and the colour coordinates are relatively stable upon temperature increase. Furthermore, samples doped with 50% Eu(3+) showed quantum yields up to 85%, what is suitable for commercial application. Temperature dependent emission spectra revealed that heavily Eu(3+) doped phosphors possess stable emission up to 400 K and lose half of the efficiency only at 515 K. In addition, ceramic disks of Y2Mo4O15:75%Eu(3+) phosphor with thickness of 0.71 and 0.98 mm were prepared and it turned out that they efficiently convert radiation of 375 and 400 nm LEDs to the red light, whereas combination with 455 nm LED yields purple colour.

Alternating InGaN barriers with GaN barriers for enhancing optical performance in InGaN light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Yujue; Zeng, Yiping, E-mail: ypzeng@semi.ac.cn

2015-01-21

InGaN-based light-emitting diodes (LEDs) with some specific designs on the quantum barrier layers by alternating InGaN barriers with GaN barriers are proposed and studied numerically. In the proposed structure, simulation results show that the carriers are widely dispersed in the multi-quantum well active region, and the radiative recombination rate is efficiently improved and the electron leakage is suppressed accordingly, due to the appropriate band engineering. The internal quantum efficiency and light-output power are thus markedly enhanced and the efficiency droop is smaller, compared to the original structures with GaN barriers or InGaN barriers. Moreover, the gradually decrease of indium compositionmore » in the alternating quantum barriers can further promote the LED performance because of the more uniform carrier distribution, which provides us a simple but highly effective approach for high-performance LED applications.« less

Single-Layer Halide Perovskite Light-Emitting Diodes with Sub-Band Gap Turn-On Voltage and High Brightness.

PubMed

Li, Junqiang; Shan, Xin; Bade, Sri Ganesh R; Geske, Thomas; Jiang, Qinglong; Yang, Xin; Yu, Zhibin

2016-10-03

Charge-carrier injection into an emissive semiconductor thin film can result in electroluminescence and is generally achieved by using a multilayer device structure, which requires an electron-injection layer (EIL) between the cathode and the emissive layer and a hole-injection layer (HIL) between the anode and the emissive layer. The recent advancement of halide perovskite semiconductors opens up a new path to electroluminescent devices with a greatly simplified device structure. We report cesium lead tribromide light-emitting diodes (LEDs) without the aid of an EIL or HIL. These so-called single-layer LEDs have exhibited a sub-band gap turn-on voltage. The devices obtained a brightness of 591 197 cd m -2 at 4.8 V, with an external quantum efficiency of 5.7% and a power efficiency of 14.1 lm W -1 . Such an advancement demonstrates that very high efficiency of electron and hole injection can be obtained in perovskite LEDs even without using an EIL or HIL.

Effects of two-step Mg doping in p-GaN on efficiency characteristics of InGaN blue light-emitting diodes without AlGaN electron-blocking layers

NASA Astrophysics Data System (ADS)

Ryu, Han-Youl; Lee, Jong-Moo

2013-05-01

A light-emitting diode (LED) structure containing p-type GaN layers with two-step Mg doping profiles is proposed to achieve high-efficiency performance in InGaN-based blue LEDs without any AlGaN electron-blocking-layer structures. Photoluminescence and electroluminescence (EL) measurement results show that, as the hole concentration in the p-GaN interlayer between active region and the p-GaN layer increases, defect-related nonradiative recombination increases, while the electron current leakage decreases. Under a certain hole-concentration condition in the p-GaN interlayer, the electron leakage and active region degradation are optimized so that high EL efficiency can be achieved. The measured efficiency characteristics are analyzed and interpreted using numerical simulations.

Electroluminescent refrigeration by ultra-efficient GaAs light-emitting diodes

NASA Astrophysics Data System (ADS)

Patrick Xiao, T.; Chen, Kaifeng; Santhanam, Parthiban; Fan, Shanhui; Yablonovitch, Eli

2018-05-01

Electroluminescence—the conversion of electrons to photons in a light-emitting diode (LED)—can be used as a mechanism for refrigeration, provided that the LED has an exceptionally high quantum efficiency. We investigate the practical limits of present optoelectronic technology for cooling applications by optimizing a GaAs/GaInP double heterostructure LED. We develop a model of the design based on the physics of detailed balance and the methods of statistical ray optics, and predict an external luminescence efficiency of ηext = 97.7% at 263 K. To enhance the cooling coefficient of performance, we pair the refrigerated LED with a photovoltaic cell, which partially recovers the emitted optical energy as electricity. For applications near room temperature and moderate power densities (1.0-10 mW/cm2), we project that an electroluminescent refrigerator can operate with up to 1.7× the coefficient of performance of thermoelectric coolers with ZT = 1, using the material quality in existing GaAs devices. We also predict superior cooling efficiency for cryogenic applications relative to both thermoelectric and laser cooling. Large improvements to these results are possible with optoelectronic devices that asymptotically approach unity luminescence efficiency.

Design of a high-efficiency train headlamp with low power consumption using dual half-parabolic aluminized reflectors.

PubMed

Liang, Wei-Lun; Su, Guo-Dung J

2018-02-20

We propose a train headlamp system using dual half-circular parabolic aluminized reflectors. Each half-circular reflector contains five high-efficiency and small-package light-emitting diode (LED) chips, and the halves are 180° rotationally symmetric. For traffic safety, the headlamp satisfies the Code of Federal Regulations. To predict the pattern of illumination, an analytical derivation is developed for the optical path of a ray that is perpendicular to and emitted from the center of an LED chip. This ray represents the main ray emitted from the LED chip and is located at the maximum illuminance of the spot projected by the LED source onto a screen. We then analyze the design systematically to determine the locations of the LED chips in the reflector that minimize electricity consumption while satisfying reliability constraints associated with traffic safety. Compared to a typical train headlamp system with an incandescent or halogen lamp needing several hundred watts, the proposed system only uses 20.18 W to achieve the luminous intensity requirements.

Effects of pitch and shape for diffraction grating in LED fog lamp

NASA Astrophysics Data System (ADS)

Chen, Hsi-Chao; Lin, Jun-Yu; Wu, Jih-Huah; Ma, Shih-Hsin; Yang, Chi-Hao

2011-10-01

The characteristics of light-emitting diodes (LEDs) that make them energy-efficient and long-lasting light source for general illumination have attracted a great attention from the lighting industry and commercial market. As everyone know LEDs have the advantages of environmental protection, long lifetime, fast response time (μs), low voltage and good mechanical properties. Their high luminance and the wide region of the dominant wavelengths within the entire visible spectrum mean that people have high anticipations for the applications of LEDs. The output lighting from reflector in the traditional fog lamp was required to fit the standard of the ECE R19 F3 regulation. Therefore, this study investigated the effects of pitch and angle for a diffraction grating in LED fog lamp. The light pattern of fog lamp must be satisfied ECE regulations, so a design of diffraction grating to shift down the lighting was required. There are three LEDs (Cree XLamp XPE LEDs) as the light source in the fog lamp for the illumination efficiency. Then, an optimal simulation of diffraction grating was done for the pitch and angle of the diffraction grating at the test distance of 25 meters. The best pitch and angle was 2mm and 60 degree for the grating shape of wedge type.

Effects of melamine formaldehyde resin and CaCO3 diffuser-loaded encapsulation on correlated color temperature uniformity of phosphor-converted LEDs.

PubMed

Yang, Liang; Lv, Zhicheng; Jiaojiao, Yuan; Liu, Sheng

2013-08-01

Phosphor-free dispensing is the most widely used LED packaging method, but this method results in poor quality in angular CCT uniformity. This study proposes a diffuser-loaded encapsulation to solve the problem; the effects of melamine formaldehyde (MF) resin and CaCO3 loaded encapsulation on correlated color temperature (CCT) uniformity and luminous efficiency reduction of the phosphor-converted LEDs are investigated. Results reveal that MF resin loaded encapsulation has better light diffusion performance compared to MF resin loaded encapsulation at the same diffuser concentration, but CaCO3 loaded encapsulation has better luminous efficiency maintenance. The improvements in angular color uniformity for the LEDs emitting with MF resin and CaCO3 loaded encapsulation can be explained by the increase in photon scattering. The utility of this low cost and controllable mineral diffuser packaging method provides a practical approach for enhancing the angular color uniformity of LEDs. The diffuser mass ratio of 1% MF resin or 10% CaCO3 is the optimum condition to obtain low angular CCT variance and high luminous efficiency.

Low injection losses in InGaN/GaN LEDs: The correlation of photoluminescence, electroluminescence, and photocurrent measurements

NASA Astrophysics Data System (ADS)

Quitsch, Wolf-Alexander; Sager, Daniel; Loewenich, Moritz; Meyer, Tobias; Hahn, Berthold; Bacher, Gerd

2018-06-01

Time-resolved photoluminescence spectroscopy and photocurrent measurements at quasi-resonant laser excitation are combined with electroluminescence studies to get access to low injection losses in high power InGaN/GaN LEDs. A direct relation between electroluminescence and photoluminescence efficiencies with photocurrent is found, indicating that tunneling losses play a key role in the low injection regime. This assertion is confirmed by comparing photoluminescence efficiencies under open and closed circuit conditions. Experiments under various excitation wavelengths hint at the role of resonant tunneling processes in the efficiency losses.

Efficiency improvement of green light-emitting diodes by employing all-quaternary active region and electron-blocking layer

NASA Astrophysics Data System (ADS)

Usman, Muhammad; Saba, Kiran; Han, Dong-Pyo; Muhammad, Nazeer

2018-01-01

High efficiency of green GaAlInN-based light-emitting diode (LED) has been proposed with peak emission wavelength of ∼510 nm. By introducing quaternary quantum well (QW) along with the quaternary barrier (QB) and quaternary electron blocking layer (EBL) in a single structure, an efficiency droop reduction of up to 29% has been achieved in comparison to the conventional GaN-based LED. The proposed structure has significantly reduced electrostatic field in the active region. As a result, carrier leakage has been minimized and spontaneous emission rate has been doubled.

Influence of interconnection on the long-term reliability of UV LED packages

NASA Astrophysics Data System (ADS)

Nieland, S.; Mitrenga, D.; Karolewski, D.; Brodersen, O.; Ortlepp, T.

2017-02-01

High power LEDs have conquered the mass market in recent years. Besides the main development focus to achieve higher productivity in the field of visible semiconductor LED processing, the wavelength range is further enhanced by active research and development in the direction of UVA / UVB / UVC. UVB and UVC LEDs are new and promising due to their numerous advantages. UV LEDs emit in a near range of one single emission peak with a width (FWHM) below 15 nm compared to conventional mercury discharge lamps and xenon sources, which show broad spectrums with many emission peaks over a wide range of wavelengths. Furthermore, the UV LED size is in the range of a few hundred microns and offers a high potential of significant system miniaturization. Of course, LED efficiency, lifetime and output power have to be increased [1]. Lifetime limiting issues of UVB/UVC-LED are the very high thermal stress in the chip resulting from the higher forward voltages (6-10 V @ 350 mA), the lower external quantum efficiency, below 10 % (most of the power disappears as heat), and the thermal resistance Rth of conventional LED packages being not able to dissipate these large amounts of heat for spreading. Beside the circuit boards and submounts which should have maximum thermal conductivity, the dimension of contacts as well as the interconnection of UV LED to the submount/package determinates the resolvable amount of heat [2]. In the paper different innovative interconnection techniques for UVC-LED systems will be discussed focused on the optimization of thermal conductivity in consideration of the assembly costs. Results on thermal simulation for the optimal contact dimensions and interconnections will be given. In addition, these theoretical results will be compared with results on electrical characterization as well as IR investigations on real UV LED packages in order to give recommendations for optimal UV LED assembly.

Compact LED based LCOS optical engine for mobile projection

NASA Astrophysics Data System (ADS)

Zhang, Wenzi; Li, Xiaoyan; Liu, Qinxiao; Yu, Feihong

2009-11-01

With the development of high power LED (light emitting diode) technology and color filter LCOS (liquid crystal on silicon) technology, the research on LED based micro optical engine for mobile projection has been a hot topic recently. In this paper one compact LED powered LCOS optical engine design is presented, which is intended to be embedded in cell phone, digital camera, and so on. Compared to DLP (digital light processor) and traditional color sequential LCOS technology, the color filter based LCOS panel is chosen for the compact optical engine, this is because only white LED is needed. To further decrease the size of the optical engine, only one specifically designed plastic free form lens is applied in the illumination part of the optical engine. This free form lens is designed so that it plays the roles of both condenser and integrator, by which the output light of LED is condensed and redistributed, and light illumination of high efficiency, high uniformity and small incident angle on LCOS is acquired. Besides PBS (polarization beam splitter), LCOS, and projection lens, the compact optical engine contains only this piece of free form plastic lens, which can be produced by plastic injection molding. Finally a white LED powered LCOS optical engine with a compact size of less than 6.6 cc can be acquired. With the ray tracing simulation result, the light efficiency analysis shows that the output flux is over 8.5 ANSI lumens and the ANSI uniformity of over 80%.

Lens design of LED searchlight of high brightness and distant spot.

PubMed

Zhao, Shuang; Wang, Kai; Chen, Fei; Wu, Dan; Liu, Sheng

2011-05-01

The study related in this paper is the design of a ship-mounted LED of high brightness and distant spot. The freeform lens design obeying the edge ray principle and Snell's law is presented first. Then, to fit the illumination requirement of the searchlight, we designed a freeform lens to collimate all the light rays coming from the LED. However, theoretical analysis proves that there is a critical angle for incident rays beyond which the rays cannot be collimated, and 55% is the light-efficiency limit for polymethyl methacrylate freeform lens. We then designed a combination of a freeform lens-coupled parabolic reflector that improved light efficiency to 70%. In this paper, the design of the freeform lens-coupled parabolic reflector is given in detail. In addition, tolerance analysis and the effect of manufacturing defect are presented.

Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pozina, Galia; Ciechonski, Rafal; Bi, Zhaoxia

2015-12-21

Today's energy saving solutions for general illumination rely on efficient white light emitting diodes (LEDs). However, the output efficiency droop experienced in InGaN based LEDs with increasing current injection is a serious limitation factor for future development of bright white LEDs. We show using cathodoluminescence (CL) spatial mapping at different electron beam currents that threading dislocations are active as nonradiative recombination centers only at high injection conditions. At low current, the dislocations are inactive in carrier recombination due to local potentials, but these potentials are screened by carriers at higher injection levels. In CL images, this corresponds to the increasemore » of the dark contrast around dislocations with the injection (excitation) density and can be linked with droop related to the threading dislocations. Our data indicate that reduction of droop in the future efficient white LED can be achieved via a drastic reduction of the dislocation density by using, for example, bulk native substrates.« less

Dimming-discrete-multi-tone (DMT) for simultaneous color control and high speed visible light communication.

PubMed

Sung, Jiun-Yu; Chow, Chi-Wai; Yeh, Chien-Hung

2014-04-07

Visible light communication (VLC) using LEDs has attracted significant attention recently for the future secure, license-free and electromagnetic-interference (EMI)-free optical wireless communication. Dimming technique in LED lamp is advantageous for energy efficiency. Color control can be performed in the red-green-blue (RGB) LEDs by using dimming technique. It is highly desirable to employ dimming technique to provide simultaneous color and dimming control and high speed VLC. Here, we proposed and demonstrated a LED dimming control using dimming-discrete-multi-tone (DMT) modulation. High speed DMT-based VLC with simultaneous color and dimming control is demonstrated for the first time to the best of our knowledge. Demonstration and analyses for several modulation conditions and transmission distances are performed, for instance, demonstrating the data rate of 103.5 Mb/s (using RGB LED) with fast Fourier transform (FFT) size of 512.

Novel high refractive index, thermally conductive additives for high brightness white LEDs

NASA Astrophysics Data System (ADS)

Hutchison, Richard Stephen

In prior works the inclusion of nanoparticle fillers has typically been shown to increase the thermal conductivity or refractive index of polymer nanocomposites separately. High refractive index zirconia nanoparticles have already proved their merit in increasing the optical efficiency of encapsulated light emitting diodes. However, the thermal properties of zirconia-silicone nanocomposites have yet to be investigated. While phosphor-converted light emitting diodes are at the forefront of solid-state lighting technologies for producing white light, they are plagued by efficiency losses due to excessive heating at the semiconductor die and in and around the phosphor particles, as well as photon scattering losses in the phosphor layer. It would then be of great interest if the high refractive index nanoparticles were found to both be capable of increasing the refractive index, thus reducing the optical scattering, and also the thermal conductivity, channeling more heat away from the LED die and phosphors, mitigating efficiency losses from heat. Thermal conductance measurements on unfilled and nanoparticle loaded silicone samples were conducted to quantify the effect of the zirconia nanoparticle loading on silicone nanocomposite thermal conductivity. An increase in thermal conductivity from 0.27 W/mK to 0.49 W/mK from base silicone to silicone with 33.5 wt% zirconia nanoparticles was observed. This trend closely mirrored a basic rule of mixtures prediction, implying a further enhancement in thermal conductivity could be achieved at higher nanoparticle loadings. The optical properties of transparency and light extraction efficiency of these composites were also investigated. While overall the zirconia nanocomposite showed good transparency, there was a slight decrease at the shorter wavelengths with increasing zirconia content. For longer wavelength LEDs, such as green or red, this might not matter, but phosphor-converted white LEDs use a blue LED as the photon source making this decrease in transparency important to note. This decrease in transparency may be partially or wholly why a decrease in light extraction efficiency is observed at the 33.5 wt% zirconia loading fraction used for the LED samples. Preliminary aging studies under full and enhanced power conditions were conducted over 500 and 1000 hours to observe any changes in the spectral output power and phosphor conversion efficiency of the LEDs due to inclusion of the zirconia nanoparticles. It was found that the nanoparticles have no negative effect on the aging properties but also show no enhancement in relative output power over a preliminary aging study. However, their inclusion did result in increased phosphor conversion efficiency over the use of an unfilled silicone. This increase was seen as around a 10% or greater enhancement for the nanocomposite over that for the base Sylgard silicone. These experiments were originally conducted on the commercially available methylated Sylgard 184 silicone and then again on a higher refractive index methyl-phenyl silicone from Momentive. While some of the results from the Momentive silicone were perplexing, it was seen that, even without the inclusion of nanoparticles, the Momentive silicone had a higher refractive index, better aging properties, and a higher phosphor conversion efficiency over 500 hours under enhanced power conditions, warranting further studies into methyl-phenyl silicone nanocomposites.

Simultaneously Enhancing Light Emission and Suppressing Efficiency Droop in GaN Microwire-Based Ultraviolet Light-Emitting Diode by the Piezo-Phototronic Effect.

PubMed

Wang, Xingfu; Peng, Wenbo; Yu, Ruomeng; Zou, Haiyang; Dai, Yejing; Zi, Yunlong; Wu, Changsheng; Li, Shuti; Wang, Zhong Lin

2017-06-14

Achievement of p-n homojuncted GaN enables the birth of III-nitride light emitters. Owing to the wurtzite-structure of GaN, piezoelectric polarization charges present at the interface can effectively control/tune the optoelectric behaviors of local charge-carriers (i.e., the piezo-phototronic effect). Here, we demonstrate the significantly enhanced light-output efficiency and suppressed efficiency droop in GaN microwire (MW)-based p-n junction ultraviolet light-emitting diode (UV LED) by the piezo-phototronic effect. By applying a -0.12% static compressive strain perpendicular to the p-n junction interface, the relative external quantum efficiency of the LED is enhanced by over 600%. Furthermore, efficiency droop is markedly reduced from 46.6% to 7.5% and corresponding droop onset current density shifts from 10 to 26.7 A cm -2 . Enhanced electrons confinement and improved holes injection efficiency by the piezo-phototronic effect are revealed and theoretically confirmed as the physical mechanisms. This study offers an unconventional path to develop high efficiency, strong brightness and high power III-nitride light sources.

Thermal management and light extraction in multi-chip and high-voltage LEDs by cup-shaped copper heat spreader technology

NASA Astrophysics Data System (ADS)

Horng, Ray-Hua; Hu, Hung-Lieh; Tang, Li-Shen; Ou, Sin-Liang

2013-03-01

For LEDs with original structure and copper heat spreader, the highest surface temperatures of 3×3 array LEDs modules were 52.6 and 42.67 °C (with 1050 mA injection current), while the highest surface temperatures of 4×4 array LEDs modules were 58.55 and 48.85 °C (with 1400 mA injection current), respectively. As the 5×5 array LEDs modules with original structure and copper heat spreader were fabricated, the highest surface temperatures at 1750 mA injection current were 68.51 and 56.73 °C, respectively. The thermal resistance of optimal LEDs array module with copper heat spreader on heat sink using compound solder is reduced obviously. On the other hand, the output powers of 3×3, 4×4 and 5×5 array LEDs modules with original structure were 3621.7, 6346.3 and 9760.4 mW at injection currents of 1050, 1400 and 1750 mA, respectively. Meanwhile, the output powers of these samples with copper heat spreader can be improved to 4098.5, 7150.3 and 10919.6 mW, respectively. The optical and thermal characteristics of array LEDs module have been improved significantly using the cup-shaped copper structure. Furthermore, various types of epoxy-packaged LEDs with cup-shaped structure were also fabricated. It is found that the light extraction efficiency of LED with semicircle package has 55% improvement as compared to that of LED with flat package. The cup-shaped copper structure was contacted directly with sapphire to enhance heat dissipation. In addition to efficient heat dissipation, the light extraction of the lateral emitting in high-power LEDs can be improved.

Fast Postmoisture Treatment of Luminescent Perovskite Films for Efficient Light-Emitting Diodes.

PubMed

Wang, Haoran; Li, Xiaomin; Yuan, Mingjian; Yang, Xuyong

2018-04-01

Despite the recent advances in the performance of perovskite light-emitting diodes (PeLEDs), the effects of water on the perovskite emissive layer and its electroluminescence are still unclear, even though it has been previously demonstrated that moisture has a significant impact on the quality of perovskite films in the fabrication process of perovskite solar cells and is a prerequisite for obtaining high-performance PeLEDs. Here, the effects of postmoisture on the luminescent CH 3 NH 3 PbBr 3 (MAPbBr 3 ) perovskite films are systematically investigated. It is found that postmoisture treatment can efficiently control the morphology and growth of perovskite films and only a fast moisture exposure at a 60% high relative humidity results in significantly improved crystallinity, carrier lifetime, and photoluminescence quantum yield of perovskite films. With the optimized moisture-treated perovskite films, a high-performance PeLED is fabricated, exhibiting a maximum current efficiency of 20.4 cd A -1 , which is an almost 20-fold enhancement when compared with perovskite films without moisture treatment. The results provide valuable insights into the moisture-assisted growth of luminescent perovskite films and will aid in the development of high-performance perovskite light-emitting devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improving the Stability of Metal Halide Perovskite Materials and Light-Emitting Diodes.

PubMed

Cho, Himchan; Kim, Young-Hoon; Wolf, Christoph; Lee, Hyeon-Dong; Lee, Tae-Woo

2018-01-25

Metal halide perovskites (MHPs) have numerous advantages as light emitters such as high photoluminescence quantum efficiency with a direct bandgap, very narrow emission linewidth, high charge-carrier mobility, low energetic disorder, solution processability, simple color tuning, and low material cost. Based on these advantages, MHPs have recently shown unprecedented radical progress (maximum current efficiency from 0.3 to 42.9 cd A -1 ) in the field of light-emitting diodes. However, perovskite light-emitting diodes (PeLEDs) suffer from intrinsic instability of MHP materials and instability arising from the operation of the PeLEDs. Recently, many researchers have devoted efforts to overcome these instabilities. Here, the origins of the instability in PeLEDs are reviewed by categorizing it into two types: instability of (i) the MHP materials and (ii) the constituent layers and interfaces in PeLED devices. Then, the strategies to improve the stability of MHP materials and PeLEDs are critically reviewed, such as A-site cation engineering, Ruddlesden-Popper phase, suppression of ion migration with additives and blocking layers, fabrication of uniform bulk polycrystalline MHP layers, and fabrication of stable MHP nanoparticles. Based on this review of recent advances, future research directions and an outlook of PeLEDs for display applications are suggested. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Feasibility of Ultraviolet Light Emitting Diodes as an Alternative Light Source for Photocatalysis

NASA Technical Reports Server (NTRS)

Levine, Langanf H.; Richards, Jeffrey T.; Soler, Robert; Maxik, Fred; Coutts, Janelle; Wheeler, Raymond M.

2011-01-01

The objective of this study was to determine whether ultraviolet light emitting diodes (UV-LEDs) could serve as an alternative photon source efficiently for heterogeneous photocatalytic oxidation (PCO). An LED module consisting of 12 high-power UV-A LEDs was designed to be interchangeable with a UV-A fluorescent black light blue (BLB) lamp in a Silica-Titania Composite (STC) packed bed annular reactor. Lighting and thermal properties were characterized to assess the uniformity and total irradiant output. A forward current of (I(sub F)) 100 mA delivered an average irradiance of 4.0 m W cm(exp -2), which is equivalent to the maximum output of the BLB, but the irradiance of the LED module was less uniform than that of the BLB. The LED- and BLB-reactors were tested for the oxidization of 50 ppmv ethanol in a continuous flow-through mode with 0.94 sec space time. At the same irradiance, the UV-A LED reactor resulted in a lower PCO rate constant than the UV-A BLB reactor (19.8 vs. 28.6 nM CO2 sec-I), and consequently lower ethanol removal (80% vs. 91%) and mineralization efficiency (28% vs. 44%). Ethanol mineralization increased in direct proportion to the irradiance at the catalyst surface. This result suggests that reduced ethanol mineralization in the LED- reactor could be traced to uneven irradiance over the photocatalyst, leaving a portion of the catalyst was under-irradiated. The potential of UV-A LEDs may be fully realized by optimizing the light distribution over the catalyst and utilizing their instantaneous "on" and "off' feature for periodic irradiation. Nevertheless, the current UV-A LED module had the same wall plug efficiency (WPE) of 13% as that of the UV-A BLB. These results demonstrated that UV-A LEDs are a viable photon source both in terms of WPE and PCO efficiency.

Essentials for Successful and Widespread LED Lighting Adoption

NASA Astrophysics Data System (ADS)

Khan, Nisa

2011-03-01

Solid-state lighting (SSL), with light-emitting diodes (LEDs) as the light source, is a growing and essential field, particularly in regard to the heightened need for global energy efficiency. In recent years, SSL has experienced remarkable advances in efficiency, light output magnitude and quality. Thus such diverse applications as signage, message centers, displays, and special lighting are now adopting LEDs, taking 2010's market to 9.1 billion - 68% growth from the previous year! While this is promising, future growth in both display and lighting applications will rely upon unveiling deeper understanding and key innovations in LED lighting science and technologies. In this presentation, some LED lighting fundamentals, engineering challenges and novel solutions will be discussed to address reduction in efficiency (a.k.a. droop) at high currents, and to obtain uniform light distribution for overcoming LEDs' directional nature. The droop phenomenon has been a subject of much controversy in the industry and despite several studies and claims, a widely-accepted explanation still lacks because of counter arguments and experiments. Recently several research studies have identified that the droop behavior in nitride-based LEDs beyond certain current density ranges can only be comprehensively explained if the current leaking beyond the LED active region is included. Although such studies have identified a few useful current leakage mechanisms outside the active region, no one has included current leakage, due to non-ideal, 3-D device structures that create undesirable current distribution inside and outside the active region. This talk will address achieving desirable current distributions from optimized 3-D device structures that should reduce current leakage and hence the droop behavior. In addition to novel LED design solutions for droop reduction and uniform light distribution, the talk will address cost and yield concerns as they pertain to core material scarcity. Such solutions are expected to make LED lights more energy efficient, pleasant in appearance, longer-lasting, affordable, and thus suitable for green living.

High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer

NASA Astrophysics Data System (ADS)

Lin, Jia-Yong; Pei, Yan-Li; Zhuo, Yi; Chen, Zi-Min; Hu, Rui-Qin; Cai, Guang-Shuo; Wang, Gang

2016-11-01

In this study, the high performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) with Al-doped ZnO (AZO) transparent conductive layers (TCLs) has been demonstrated. The AZO-TCLs were fabricated on the n+-InGaN contact layer by metal organic chemical vapor deposition (MOCVD) using H2O as an oxidizer at temperatures as low as 400 °C without any post-deposition annealing. It shows a high transparency (98%), low resistivity (510-4 Ω·cm), and an epitaxial-like excellent interface on p-GaN with an n+-InGaN contact layer. A forward voltage of 2.82 V @ 20 mA was obtained. Most importantly, the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL (LED-III), and by 28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O2 as an oxidizer (LED-II), respectively. The results indicate that the AZO-TCL grown by MOCVD using H2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application. Project supported by the National Natural Science Foundation of China (Grant Nos. 61204091, 61404177, 51402366, and U1201254) and the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015B010132006).

Beyond conventional c-plane GaN-based light emitting diodes: A systematic exploration of LEDs on semi-polar orientations

NASA Astrophysics Data System (ADS)

Monavarian, Morteza

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the "Green Gap", is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the "quantum confined Stark effect") and low indium incorporation efficiency that are the two main factors that contribute to the Green Gap phenomenon. One possible approach that holds promise for a new generation of green and yellow light emitting devices with higher efficiency is the deployment of nonpolar and semi-polar crystallographic orientations of GaN to eliminate or mitigate polarization fields. In theory, the use of other GaN planes for light emitters could also enhance the efficiency of indium incorporation compared to c-plane. In this thesis, I present a systematic exploration of the suitable GaN orientation for future lighting technologies. First, in order to lay the groundwork for further studies, it is important to discuss the analysis of processes limiting LED efficiency and some novel designs of active regions to overcome these limitations. Afterwards, the choice of nonpolar orientations as an alternative is discussed. For nonpolar orientation, the (1100)-oriented (mo-plane) structures on patterned Si (112) and freestanding m-GaN are studied. The semi-polar orientations having substantially reduced polarization field are found to be more promising for light-emitting diodes (LEDs) owing to high indium incorporation efficiency predicted by theoretical studies. Thus, the semi-polar orientations are given close attention as alternatives for future LED technology. (Abstract shortened by ProQuest.).

A single blue nanorod light emitting diode.

PubMed

Hou, Y; Bai, J; Smith, R; Wang, T

2016-05-20

We report a light emitting diode (LED) consisting of a single InGaN/GaN nanorod fabricated by a cost-effective top-down approach from a standard LED wafer. The device demonstrates high performance with a reduced quantum confined Stark effect compared with a standard planar counterpart fabricated from the same wafer, confirmed by optical and electrical characterization. Current density as high as 5414 A cm(-2) is achieved without significant damage to the device due to the high internal quantum efficiency. The efficiency droop is mainly ascribed to Auger recombination, which was studied by an ABC model. Our work provides a potential method for fabricating compact light sources for advanced photonic integrated circuits without involving expensive or time-consuming fabrication facilities.

Effects of Wavelength and Defect Density on the Efficiency of (In,Ga)N-Based Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Pristovsek, Markus; Bao, An; Oliver, Rachel A.; Badcock, Tom; Ali, Muhammad; Shields, Andrew

2017-06-01

We measure the electroluminescence of light-emitting diodes (LEDs) on substrates with low dislocation densities (LDD) at 106 cm-2 and low 108 cm-2 , and compare them to LEDs on substrates with high dislocation densities (HDD) closer to 1010 cm-2 . The external quantum efficiencies (EQEs) are fitted using the A B C model with and without localization. The nonradiative-recombination (NR) coefficient A is constant for HDD LEDs, indicating that the NR is dominated by dislocations at all wavelengths. However, A strongly increases for LDD LEDs by a factor of 20 when increasing the emission wavelength from 440 to 540 nm. We attribute this to an increased density of point defects due to the lower growth temperatures used for longer wavelengths. The radiative recombination coefficient B follows the squared wave-function overlap for all samples. Using the observed coefficients, we calculate the peak efficiency as a function of the wavelength. For HDD LEDs the change of wave-function overlap (i.e., B ) is sufficient to reduce the EQE as observed, while for LDD LEDs also the NR coefficient A must increase to explain the observed EQEs. Thus, reducing NR is important to improving the EQEs of green LEDs, but this cannot be achieved solely by reducing the dislocation density: point defects must also be addressed.

Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctions.

PubMed

Kuo, Yen-Kuang; Shih, Ya-Hsuan; Chang, Jih-Yuan; Lai, Wei-Chih; Liu, Heng; Chen, Fang-Ming; Lee, Ming-Lun; Sheu, Jinn-Kong

2017-08-07

Monolithic stacked InGaN light-emitting diode (LED) connected by a polarization-enhanced GaN/AlN-based tunnel junction is demonstrated experimentally in this study. The typical stacked LEDs exhibit 80% enhancement in output power compared with conventional single LEDs because of the repeated use of electrons and holes for photon generation. The typical operation voltage of stacked LEDs is higher than twice the operation voltage of single LEDs. This high operation voltage can be attributed to the non-optimal tunneling junction in stacked LEDs. In addition to the analyses of experimental results, theoretical analysis of different schemes of tunnel junctions, including diagrams of energy bands, diagrams of electric fields, and current-voltage relation curves, are investigated using numerical simulation. The results shown in this paper demonstrate the feasibility in developing cost-effective and highly efficient tunnel-junction LEDs.

Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes

NASA Astrophysics Data System (ADS)

Maeda, Noritoshi; Yun, Joosun; Jo, Masafumi; Hirayama, Hideki

2018-04-01

Improving the light-extraction efficiency (LEE) is a major issue for the development of deep-ultraviolet (DUV) light-emitting diodes (LEDs). For this improvement, we introduced a transparent p-AlGaN contact layer and a reflective p-type electrode. In this work, we investigated the improvements obtained by replacing conventional Ni/Au p-type electrodes with highly reflective Ni/Mg and Rh electrodes. The external quantum efficiencies (EQEs) of 279 nm DUV LEDs were increased from 4.2 to 6.6% and from 3.4 to 4.5% by introducing Ni/Mg and Rh p-type electrodes, respectively. The LEE enhancement factors for the Ni/Mg and Rh electrodes were 1.6 and 1.4, respectively. These results are explained by the fact that the measured reflectances of the Ni/Mg and Rh electrodes were approximately 80 and 55%, respectively. Moreover, it was concluded that a passivation layer is required for Ni/Mg electrodes to prevent the degradation of the LED properties by the oxidation of Mg.

Influence of p-GaN annealing on the optical and electrical properties of InGaN/GaN MQW LEDs

NASA Astrophysics Data System (ADS)

Sun, Li; Weng, Guo-En; Liang, Ming-Ming; Ying, Lei-Ying; Lv, Xue-Qin; Zhang, Jiang-Yong; Zhang, Bao-Ping

2014-06-01

Optical and electrical properties of InGaN/GaN multiple quantum wells (MQWs) light emitting diodes (LEDs) annealed in pure O2 ambient (500 °C) and pure N2 ambient (800 °C) were systematically investigated. The temperature-dependent photoluminescence measurements showed that high-temperature thermal annealing in N2 ambient can induce indium clusters in InGaN MQWs. Although the deep traps induced by indium clusters can act as localized centers for carriers, there are many more dislocations out of the trap centers due to high-temperature annealing. As a result, the radiative efficiency of the sample annealed in N2 ambient was lower than that annealed in O2 ambient at room temperature. Electrical measurements demonstrated that the LEDs annealed in O2 ambient were featured by a lower forward voltage and there was an increase of ~41% in wall-plug efficiency at 20 mA in comparison with the LEDs annealed in N2 ambient. It is thus concluded that activation of the Mg-doped p-GaN layer should be carried out at a low-temperature O2 ambient so as to obtain LEDs with better performance.

Integrated Nanoscale Antenna-LED for On-Chip Optical Communication

NASA Astrophysics Data System (ADS)

Fortuna, Seth

Traditional semiconductor light emitting diodes (LEDs) have low modulation speed because of long spontaneous emission lifetime. Spontaneous emission in semiconductors (and indeed most light emitters) is an inherently slow process owing to the size mismatch between the dipole length of the optical dipole oscillators responsible for light emission and the wavelength of the emitted light. More simply stated: semiconductors behave as a poor antenna for its own light emission. By coupling a semiconductor at the nanoscale to an external antenna, the spontaneous emission rate can be dramatically increased alluding to the exciting possibility of an antenna-LED that can be directly modulated faster than the laser. Such an antenna-LED is well-suited as a light source for on-chip optical communication where small size, fast speed, and high efficiency are needed to achieve the promised benefit of reduced power consumption of on-chip optical interconnect links compared with less efficient electrical interconnect links. Despite the promise of the antenna-LED, significant challenges remain to implement an antenna-coupled device in a monolithically integrated manner. Notably, most demonstrations of antenna-enhanced spontaneous emission have relied upon optical pumping of the light emitting material which is useful for fundamental studies; however, an electrical injection scheme is required for practical implementation of an antenna-LED. In this dissertation, demonstration of an electrically-injected III-V antenna-LED is reported: an important milestone toward on-chip optical interconnects. In the first part of this dissertation, the general design principles of enhancing the spontaneous emission rate of a semiconductor with an optical antenna is discussed. The cavity-backed slot antenna is shown to be uniquely suited for an electrically-injected antenna-LED because of large spontaneous emission enhancement, simple fabrication, and directional emission of light. The design, fabrication, and experimental results of the electrically-injected III-V antenna-LED is then presented. Clear evidence of antenna-enhanced electroluminescence is demonstrated including a large increase in the emitted light intensity with respect to an LED without antenna. Furthermore, it is shown that the active region emission wavelength is influenced by the antenna resonance and the emitted light is polarized; consistent with the expected behavior of the cavity-backed slot antenna. An antenna-LED consisting of a InGaAs quantum well active region is shown to have a large 200-fold enhancement of the spontaneous emission rate. In the last half of this dissertation, the performance of the antenna-LED is discussed. Remarkably, despite the high III-V surface recombination velocity, it is shown that an efficient antenna-LED consisting of an InGaAs active region is possible with an antenna-enhanced spontaneous emission rate. This is true provided the active region surface quality is preserved through the entire device process. A novel technique to preserve and clean InGaAs surfaces is reported. Finally, a rate-equation analysis shows that the optimized antenna-LED with cavity-backed slot antenna is fundamentally capable of achieving greater than 100 GHz direct modulation rate at high efficiency thus showing that an antenna-LED faster than the laser is achievable with this device architecture.

Diffuse-Illumination Systems for Growing Plants

NASA Technical Reports Server (NTRS)

May, George; Ryan, Robert

2010-01-01

Agriculture in both terrestrial and space-controlled environments relies heavily on artificial illumination for efficient photosynthesis. Plant-growth illumination systems require high photon flux in the spectral range corresponding with plant photosynthetic active radiation (PAR) (400 700 nm), high spatial uniformity to promote uniform growth, and high energy efficiency to minimize electricity usage. The proposed plant-growth system takes advantage of the highly diffuse reflective surfaces on the interior of a sphere, hemisphere, or other nearly enclosed structure that is coated with highly reflective materials. This type of surface and structure uniformly mixes discrete light sources to produce highly uniform illumination. Multiple reflections from within the domelike structures are exploited to obtain diffuse illumination, which promotes the efficient reuse of photons that have not yet been absorbed by plants. The highly reflective surfaces encourage only the plant tissue (placed inside the sphere or enclosure) to absorb the light. Discrete light sources, such as light emitting diodes (LEDs), are typically used because of their high efficiency, wavelength selection, and electronically dimmable properties. The light sources are arranged to minimize shadowing and to improve uniformity. Different wavelengths of LEDs (typically blue, green, and red) are used for photosynthesis. Wavelengths outside the PAR range can be added for plant diagnostics or for growth regulation

Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field.

PubMed

Yoo, Yang-Seok; Na, Jong-Ho; Son, Sung Jin; Cho, Yong-Hoon

2016-10-19

A critical issue in GaN-based high power light-emitting diodes (LEDs) is how to suppress the efficiency droop problem occurred at high current injection while improving overall quantum efficiency, especially in conventional c-plane InGaN/GaN quantum well (QW), without using complicated bandgap engineering or unconventional materials and structures. Although increasing thickness of each QW may decrease carrier density in QWs, formation of additional strain and defects as well as increased built-in field effect due to enlarged QW thickness are unavoidable. Here, we propose a facile and effective method for not only reducing efficiency droop but also improving quantum efficiency by utilizing c-plane InGaN/GaN QWs having thinner barriers and increased QW number while keeping the same single well thickness and total active layer thickness. As the barrier thickness decreases and the QW number increases, both internal electric field and carrier density within QWs are simultaneously reduced without degradation of material quality. Furthermore, we found overall improved efficiency and reduced efficiency droop, which was attributed to the decrease of the built-in field and to less influence by non-radiative recombination processes at high carrier density. This simple and effective approach can be extended further for high power ultraviolet, green, and red LEDs.

Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field

NASA Astrophysics Data System (ADS)

Yoo, Yang-Seok; Na, Jong-Ho; Son, Sung Jin; Cho, Yong-Hoon

2016-10-01

A critical issue in GaN-based high power light-emitting diodes (LEDs) is how to suppress the efficiency droop problem occurred at high current injection while improving overall quantum efficiency, especially in conventional c-plane InGaN/GaN quantum well (QW), without using complicated bandgap engineering or unconventional materials and structures. Although increasing thickness of each QW may decrease carrier density in QWs, formation of additional strain and defects as well as increased built-in field effect due to enlarged QW thickness are unavoidable. Here, we propose a facile and effective method for not only reducing efficiency droop but also improving quantum efficiency by utilizing c-plane InGaN/GaN QWs having thinner barriers and increased QW number while keeping the same single well thickness and total active layer thickness. As the barrier thickness decreases and the QW number increases, both internal electric field and carrier density within QWs are simultaneously reduced without degradation of material quality. Furthermore, we found overall improved efficiency and reduced efficiency droop, which was attributed to the decrease of the built-in field and to less influence by non-radiative recombination processes at high carrier density. This simple and effective approach can be extended further for high power ultraviolet, green, and red LEDs.

A charge inverter for III-nitride light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zi-Hui, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn; Zhang, Yonghui; Bi, Wengang, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn

In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a semiconductor, making an Electrode-Insulator-Semiconductor (EIS) structure, which is formed by depositing an extremely thin SiO{sub 2} insulator layer on the p{sup +}-GaN surface of a LED structure before growing the p-electrode. When the LED is forward-biased, a weak inversion layer can be obtained at the interface between the p{sup +}-GaN and SiO{sub 2} insulator. The weak inversion region can shorten the carrier tunnel distance. Meanwhile, the smaller dielectric constantmore » of the thin SiO{sub 2} layer increases the local electric field within the tunnel region, and this is effective in promoting the hole transport from the p-electrode into the p{sup +}-GaN layer. Due to the improved hole injection, the external quantum efficiency is increased by 20% at 20 mA for the 350 × 350 μm{sup 2} LED chip. Thus, the proposed EIS holds great promise for high efficiency LEDs.« less

High performance of Ga-doped ZnO transparent conductive layers using MOCVD for GaN LED applications.

PubMed

Horng, Ray-Hua; Shen, Kun-Ching; Yin, Chen-Yang; Huang, Chiung-Yi; Wuu, Dong-Sing

2013-06-17

High performance of Ga-doped ZnO (GZO) prepared using metalorganic chemical vapor deposition (MOCVD) was employed in GaN blue light-emitting diodes (LEDs) as transparent conductive layers (TCL). By the post-annealing process, the annealed 800°C GZO films exhibited a high transparency above 97% at wavelength of 450 nm. The contact resistance of GZO decreased with the annealing temperature increasing. It was attributed to the improvement of the GZO crystal quality, leading to an increase in electron concentration. It was also found that some Zn atom caused from the decomposition process diffused into the p-GaN surface of LED, which generated a stronger tunneling effect at the GZO/p-GaN interface and promoted the formation of ohmic contact. Moreover, contrast to the ITO-LED, a high light extraction efficiency of 77% was achieved in the GZO-LED at injection current of 20 mA. At 350 mA injection current, the output power of 256.51 mW of GZO-LEDs, corresponding to a 21.5% enhancement as compared to ITO-LEDs was obtained; results are promising for the development of GZO using the MOCVD technique for GaN LED applications.

LEDs for Efficient Energy

ERIC Educational Resources Information Center

Guerin, David A.

1978-01-01

Light-emitting diodes (LEDs) are described and three classroom experiments are given, one to prove the, low power requirements and efficiency of LEDs, an LED on-off detector circuit, and the third an LED photoelectric smoke detector. (BB)

Device model for pixelless infrared image up-converters based on polycrystalline graphene heterostructures

NASA Astrophysics Data System (ADS)

Ryzhii, V.; Shur, M. S.; Ryzhii, M.; Karasik, V. E.; Otsuji, T.

2018-01-01

We developed a device model for pixelless converters of far/mid-infrared radiation (FIR/MIR) images into near-infrared/visible (NIR/VIR) images. These converters use polycrystalline graphene layers (PGLs) immersed in the van der Waals materials integrated with a light emitting diode (LED). The PGL serves as an element of the PGL infrared photodetector (PGLIP) sensitive to the incoming FIR/MIR due to the interband absorption. The spatially non-uniform photocurrent generated in the PGLIP repeats (mimics) the non-uniform distribution (image) created by the incident FIR/MIR. The injection of the nonuniform photocurrent into the LED active layer results in the nonuniform NIR/VIR image reproducing the FIR/MIR image. The PGL and the entire layer structure are not deliberately partitioned into pixels. We analyze the characteristics of such pixelless PGLIP-LED up-converters and show that their image contrast transfer function and the up-conversion efficiency depend on the PGL lateral resistivity. The up-converter exhibits high photoconductive gain and conversion efficiency when the lateral resistivity is sufficiently high. Several teams have successfully demonstrated the large area PGLs with the resistivities varying in a wide range. Such layers can be used in the pixelless PGLIP-LED image up-converters. The PGLIP-LED image up-converters can substantially surpass the image up-converters based on the quantum-well infrared photodetector integrated with the LED. These advantages are due to the use of the interband FIR/NIR absorption and a high photoconductive gain in the GLIPs.

Luminescence and Luminescence Quenching of K2Bi(PO4)(MoO4):Eu3+ Phosphors with Efficiencies Close to Unity.

PubMed

Grigorjevaite, Julija; Katelnikovas, Arturas

2016-11-23

A very good light emitting diode (LED) phosphor must have strong absorption, high quantum efficiency, high color purity, and high quenching temperature. Our synthesized K 2 Bi(PO 4 )(MoO 4 ):Eu 3+ phosphors possess all of the mentioned properties. The excitation of these phosphors with the near-UV or blue radiation results in a bright red luminescence dominated by the 5 D 0 → 7 F 2 transition at ∼615 nm. Color coordinates are very stable when changing Eu 3+ concentration or temperature in the range of 77-500 K. Furthermore, samples doped with 50% and 75% Eu 3+ showed quantum efficiencies close to 100% which is a huge benefit for practical application. Temperature dependent luminescence measurements showed that phosphor performance increases with increasing Eu 3+ concentration. K 2 Eu(PO 4 )(MoO 4 ) sample at 400 K lost only 20% of the initial intensity at 77 K and would lose half of the intensity only at 578 K. Besides, the ceramic disks with thicknesses of 0.33 and 0.89 mm were prepared from K 2 Eu(PO 4 )(MoO 4 ) powder, and it turned out that they efficiently converted the radiation of 375 nm LED to the red light. The conversion of 400 nm LED radiation to the red light was not complete; thus, the light sources with various tints of purple color were obtained. The combination of ceramic disks with 455 nm LED yielded the light sources with tints of blue color due to the low absorption of ceramic disk in this spectral range. In addition, these phosphors possess a very unique emission spectra; thus, they could also be applied in luminescent security pigments.

High Color-Purity Green, Orange, and Red Light-Emitting Didoes Based on Chemically Functionalized Graphene Quantum Dots

NASA Astrophysics Data System (ADS)

Kwon, Woosung; Kim, Young-Hoon; Kim, Ji-Hee; Lee, Taehyung; Do, Sungan; Park, Yoonsang; Jeong, Mun Seok; Lee, Tae-Woo; Rhee, Shi-Woo

2016-04-01

Chemically derived graphene quantum dots (GQDs) to date have showed very broad emission linewidth due to many kinds of chemical bondings with different energy levels, which significantly degrades the color purity and color tunability. Here, we show that use of aniline derivatives to chemically functionalize GQDs generates new extrinsic energy levels that lead to photoluminescence of very narrow linewidths. We use transient absorption and time-resolved photoluminescence spectroscopies to study the electronic structures and related electronic transitions of our GQDs, which reveals that their underlying carrier dynamics is strongly related to the chemical properties of aniline derivatives. Using these functionalized GQDs as lumophores, we fabricate light-emitting didoes (LEDs) that exhibit green, orange, and red electroluminescence that has high color purity. The maximum current efficiency of 3.47 cd A-1 and external quantum efficiency of 1.28% are recorded with our LEDs; these are the highest values ever reported for LEDs based on carbon-nanoparticle phosphors. This functionalization of GQDs with aniline derivatives represents a new method to fabricate LEDs that produce natural color.

The improvement of GaN-based LED grown on concave nano-pattern sapphire substrate with SiO2 blocking layer

NASA Astrophysics Data System (ADS)

Lin, Jyun-Hao; Huang, Shyh-Jer; Su, Yan-Kuin; Huang, Kai-Wen

2015-11-01

In contrast to convex nano-pattern sapphire substrates (NPSS), which are frequently used to fabricate high-quality nitride-based light-emitting diodes (LEDs), concave NPSS have been paid relatively less attention. In this study, a concave NPSS was fabricated, and its nitride epitaxial growth process was evaluated in a step by step manner. A SiO2 layer was used to avoid nucleation over the sidewall and bottom of the nano-patterns to reduce dislocation reformation. Traditional LED structures were grown on the NPSS layer to determine its influence on device performance. X-ray diffraction, etched pit density, inverse leakage current, and internal quantum efficiency (IQE) results showed that dislocations and non-radiative recombination centers are reduced by the NPSS constructed with a SiO2 blocking layer. An IQE twice that on a planar substrate was also achieved; such a high IQE significantly enhanced the external quantum efficiency of the resultant device. Taken together, the results demonstrate that the SiO2 blocking layer proposed in this work can enhance the performance of LEDs.

Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Jun Hyuk; Lee, Jong Won; Kim, Dong Yeong

The temperature-dependent external quantum efficiencies (EQEs) were investigated for a 620 nm AlGaInP red light-emitting diodes (LEDs), a 450 nm GaInN blue LED, and a 285 nm AlGaN deep-ultraviolet (DUV) LED. We observed distinct differences in the variation of the EQE with temperature and current density for the three types of LEDs. Whereas the EQE of the AlGaInP red LED increases as temperature decreases below room temperature, the EQEs of GaInN blue and AlGaN DUV LEDs decrease for the same change in temperature in a low-current density regime. The free carrier concentration, as determined from the dopant ionization energy, shows a strong material-system-specificmore » dependence, leading to different degrees of asymmetry in carrier concentration for the three types of LEDs. We attribute the EQE variation of the red, blue, and DUV LEDs to the different degrees of asymmetry in carrier concentration, which can be exacerbated at cryogenic temperatures. As for the EQE variation with temperature in a high-current density regime, the efficiency droop for the AlGaInP red and GaInN blue LEDs becomes more apparent as temperature decreases, due to the deterioration of the asymmetry in carrier concentration. However, the EQE of the AlGaN DUV LED initially decreases, then reaches an EQE minimum point, and then increases again due to the field-ionization of acceptors by the Poole-Frenkel effect. The results elucidate that carrier transport phenomena allow for the understanding of the droop phenomenon across different material systems, temperatures, and current densities.« less

Demonstration of a simplified optical mouse lighting module by integrating the non-Lambertian LED chip and the free-form surface.

PubMed

Pan, Jui-Wen; Tu, Sheng-Han

2012-05-20

A cost-effective, high-throughput, and high-yield method for the efficiency enhancement of an optical mouse lighting module is proposed. We integrated imprinting technology and free-form surface design to obtain a lighting module with high illumination efficiency and uniform intensity distribution. The imprinting technique can increase the light extraction efficiency and modulate the intensity distribution of light-emitting diodes. A modulated light source was utilized to add a compact free-form surface element to create a lighting module with 95% uniformity and 80% optical efficiency.

Phosphor chessboard packaging for white LEDs in high efficiency and high color performance

NASA Astrophysics Data System (ADS)

Nguyen, Quang-Khoi; Chang, Yu-Yu; Lu, Chun-Yan; Yang, Tsung-Hsun; Chung, Te-Yuan; Sun, Ching-Cherng

2016-09-01

We performed the simulation of white LEDs packaging with different chessboard structures of white light converting phosphor layer covered on GaN die chip. Three different types of chessboard structures are called type 1, type 2 and type 3, respectively. The result of investigation according to the phosphor thickness show the increasing of thickness of phosphor layer are, the decreasing of output blue light power are. Meanwhile, the changes of yellow light are neglect. Type 3 shows highest packaging efficiency of 74.3 % compares with packaging efficiency of type 2 and type 1 (72.5 % and 71.3 %, respectively). Type 3 also shows the most effect of forward light. Attention that the type 3 chessboard structure gets packaging efficiency of 74.3 % at color temperature of daylight as well as high saving of phosphor amount. The color temperatures of three types of chessboard structure are higher than 5000 K, so they are suitable for lighting purpose. The angular correlate color temperature deviation (ACCTD) of type 1, type 2 and type 3 are 6500K, 11500K and 17000K, respectively.

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10 –3 Ω cm 2 and lowmore » voltage consumption below 1 V (at 1 kA/cm 2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

DOE PAGES

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...

2016-09-19

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10 –3 Ω cm 2 and lowmore » voltage consumption below 1 V (at 1 kA/cm 2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less

Color-Tunable and High-Efficiency Dye-Encapsulated Metal-Organic Framework Composites Used for Smart White-Light-Emitting Diodes.

PubMed

Chen, Wenwei; Zhuang, Yixi; Wang, Le; Lv, Ying; Liu, Jianbin; Zhou, Tian-Liang; Xie, Rong-Jun

2018-05-25

Luminescent metal-organic frameworks (MOFs) (typically dye-encapsulated MOFs) are considered as one kind of interesting downconversion materials for white-light-emitting diodes (LEDs), but their quantum efficiency (QE) is not sufficient and thus needs to be significantly enhanced for practical applications. In this study, we successfully synthesized a series of Rh@bio-MOF-1 (Rh = rhodamine) with an internal QE as high as ∼79% via a solvothermal reaction followed by cation exchanges. The high efficiency of the Rh@bio-MOF-1 composites was attributable to the high intrinsic luminescent efficiency of the selected Rh dyes, the confinement effect in the bio-MOF-1 host, and the uniform particle morphology. The emission maximum could be continuously tuned from 550 to 610 nm by controlling the species and concentration of encapsulated dye molecules, showing great color tunability of the dye-encapsulated MOFs. The emission lifetime of ∼7 ns was 1 or 2 magnitude orders shorter than that of Ce 3+ - or Eu 2+ -doped inorganic phosphors, allowing for visible light communication (VLC). White LEDs, fabricated by using the synthesized Rh@bio-MOF-1 composite and inorganic phosphors of green (Ba,Sr) 2 SiO 4 :Eu 2+ and red CaAlSiN 3 :Eu 2+ , exhibited a high color rendering index of 80-94, a luminous efficacy of 94-156 lm/W, and an excellent stability in color point against drive current. The Rh@bio-MOF-1 composites with tunable colors, short emission lifetime, and high QE are expected to be used for smart white LEDs with multifunctions of both lighting and VLC.

Improving the performance of AlGaN-based deep-ultraviolet light-emitting diodes using electron blocking layer with a heart-shaped graded Al composition

NASA Astrophysics Data System (ADS)

Kwon, M. R.; Park, T. H.; Lee, T. H.; Lee, B. R.; Kim, T. G.

2018-04-01

We propose a design for highly efficient AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using a heart-shaped graded Al composition electron-blocking layer (EBL). This novel structure reduced downward band bending at the interface between the last quantum barrier and the EBL and flattened the electrostatic field in the interlayer between the barriers of the multi-quantum barrier EBL. Consequently, electron leakage was significantly suppressed and hole injection efficiency was found to have improved. The parameter values of simulation were extracted from the experimental data of the reference DUV LEDs. Using the SimuLED, we compared the electrical and optical properties of three structures with different Al compositions in the active region and the EBL. The internal quantum efficiency of the proposed structure was shown to exceed those of the reference DUV LEDs by a factor of 1.9. Additionally, the output power at 20 mA was found to increase by a factor of 2.1.

Size-controlled InGaN/GaN nanorod LEDs with an ITO/graphene transparent layer

NASA Astrophysics Data System (ADS)

Shim, Jae-Phil; Seong, Won-Seok; Min, Jung-Hong; Kong, Duk-Jo; Seo, Dong-Ju; Kim, Hyung-jun; Lee, Dong-Seon

2016-11-01

We introduce ITO on graphene as a current-spreading layer for separated InGaN/GaN nanorod LEDs for the purpose of passivation-free and high light-extraction efficiency. Transferred graphene on InGaN/GaN nanorods effectively blocks the diffusion of ITO atoms to nanorods, facilitating the production of transparent ITO/graphene contact on parallel-nanorod LEDs, without filling the air gaps, like a bridge structure. The ITO/graphene layer sufficiently spreads current in a lateral direction, resulting in uniform and reliable light emission observed from the whole area of the top surface. Using KOH treatment, we reduce series resistance and reverse leakage current in nanorod LEDs by recovering the plasma-damaged region. We also control the size of the nanorods by varying the KOH treatment time and observe strain relaxation via blueshift in electroluminescence. As a result, bridge-structured LEDs with 8 min of KOH treatment show 15 times higher light-emitting efficiency than with 2 min of KOH treatment.

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

NASA Astrophysics Data System (ADS)

Calciati, Marco; Goano, Michele; Bertazzi, Francesco; Vallone, Marco; Zhou, Xiangyu; Ghione, Giovanni; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Bellotti, Enrico; Verzellesi, Giovanni; Zhu, Dandan; Humphreys, Colin

2014-06-01

Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of current- and temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs). First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional) classes of models are addressed, like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i) the approximations in the transport description through the multi-quantum-well active region, (ii) the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii) the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10-30 cm6/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This preliminary attempt at uncertainty quantification confirms, beyond the present case, the need for an improved description of carrier transport and microscopic radiative and nonradiative recombination mechanisms in device-level LED numerical models.

CALiPER Report 21.2. Linear (T8) LED Lamp Performance in Five Types of Recessed Troffers

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2014-05-01

Although lensed troffers are numerous, there are many other types of optical systems as well. This report looks at the performance of three linear (T8) LED lamps—chosen primarily based on their luminous intensity distributions (narrow, medium, and wide beam angles)—as well as a benchmark fluorescent lamp in five different troffer types. Also included are the results of a subjective evaluation. Results show that linear (T8) LED lamps can improve luminaire efficiency in K12-lensed and parabolic-louvered troffers, effect little change in volumetric and high-performance diffuse-lensed type luminaires, but reduce efficiency in recessed indirect troffers. These changes can be accompanied by visualmore » appearance and visual comfort consequences, especially when LED lamps with clear lenses and narrow distributions are installed. Linear (T8) LED lamps with diffuse apertures exhibited wider beam angles, performed more similarly to fluorescent lamps, and received better ratings from observers. Guidance is provided on which luminaires are the best candidates for retrofitting with linear (T8) LED lamps.« less

DOE CALiPER Program, Report 21.2: Linear (T8) LED Lamp Performance in Five Types of Recessed Troffers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, Naomi J.; Perrin, Tess E.; Royer, Michael P.

2014-05-20

Although lensed troffers are numerous, there are many other types of optical systems as well. This report looked at the performance of three linear (T8) LED lamps chosen primarily based on their luminous intensity distributions (narrow, medium, and wide beam angles) as well as a benchmark fluorescent lamp in five different troffer types. Also included are the results of a subjective evaluation. Results show that linear (T8) LED lamps can improve luminaire efficiency in K12-lensed and parabolic-louvered troffers, effect little change in volumetric and high-performance diffuse-lensed type luminaires, but reduce efficiency in recessed indirect troffers. These changes can be accompaniedmore » by visual appearance and visual comfort consequences, especially when LED lamps with clear lenses and narrow distributions are installed. Linear (T8) LED lamps with diffuse apertures exhibited wider beam angles, performed more similarly to fluorescent lamps, and received better ratings from observers. Guidance is provided on which luminaires are the best candidates for retrofitting with linear (T8) LED lamps.« less

GaN-Based Light-Emitting Diodes Grown on Nanoscale Patterned Sapphire Substrates with Void-Embedded Cortex-Like Nanostructures

NASA Astrophysics Data System (ADS)

Lin, Yu-Sheng; Yeh, J. Andrew

2011-09-01

High-efficiency GaN-based light-emitting diodes (LEDs) with an emitting wavelength of 438 nm were demonstrated utilizing nanoscale patterned sapphire substrates with void-embedded cortex-like nanostructures (NPSS-VECN). Unlike the previous nanopatterned sapphire substrates, the presented substrate has a new morphology that can not only improve the crystalline quality of GaN epilayers but also generate a void-embedded nanostructural layer to enhance light extraction. Under a driving current of 20 mA, the external quantum efficiency of an LED with NPSS-VECN is enhanced by 2.4-fold compared with that of the conventional LED. Moreover, the output powers of two devices respectively are 33.1 and 13.9 mW.

Improved Efficiency and Enhanced Color Quality of Light-Emitting Diodes with Quantum Dot and Organic Hybrid Tandem Structure.

PubMed

Zhang, Heng; Feng, Yuanxiang; Chen, Shuming

2016-10-03

Light-emitting diodes based on organic (OLEDs) and colloidal quantum dot (QLEDs) are widely considered as next-generation display technologies because of their attractive advantages such as self-emitting and flexible form factor. The OLEDs exhibit relatively high efficiency, but their color saturation is quite poor compared with that of QLEDs. In contrast, the QLEDs show very pure color emission, but their efficiency is lower than that of OLEDs currently. To combine the advantages and compensate for the weaknesses of each other, we propose a hybrid tandem structure which integrates both OLED and QLED in a single device architecture. With ZnMgO/Al/HATCN interconnecting layer, hybrid tandem LEDs are successfully fabricated. The demonstrated hybrid tandem devices feature high efficiency and high color saturation simultaneously; for example, the devices exhibit maximum current efficiency and external quantum efficiency of 96.28 cd/A and 25.90%, respectively. Meanwhile, the full width at half-maximum of the emission spectra is remarkably reduced from 68 to 44 nm. With the proposed hybrid tandem structure, the color gamut of the displays can be effectively increased from 81% to 100% NTSC. The results indicate that the advantages of different LED technologies can be combined in a hybrid tandem structure.

Design and construction evaluation of a photovoltaic DC LED lighting system

NASA Astrophysics Data System (ADS)

Bhamidipati, Jyotsna

2008-08-01

The market demand for commercialization of Photovoltaic (PV) systems depends a lot on the reliability, efficiency and performance of various components within the system. PV panels produce DC power when exposed to sunlight, and an inverter converts this to AC power in a typical solar powered building. Though, PV lighting has existed for a long time it hasn't been very effective, as incandescent light sources were commonly used which are inefficient. Today fluorescent fixtures are mostly used with PV's due to its high efficacy. Light-emitting diodes present a new vision to energy efficiency in lighting design with their low energy consumption. Current research predicts improved efficiencies of LED light fixtures and their commercial use is a few years away. LEDs which operate on DC voltages when coupled with photovoltaics can be a simple PV lighting application and a sustainable solution with potential for payback. This research evaluates the design and construction of a photovoltaic DC LED lighting system for a solar house at Pennsylvania State University. A detailed cost and payback analysis of a PV DC LED lighting system is presented in this research. PV output simulations for the solar house are presented. Results presented in this research indicate that the Solid state lighting market is evolving rapidly and that LED's are a choice in stand-alone photovoltaic DC lighting systems. The efficiency and the cost-effectiveness of such systems would however improve in the coming years with research and development now focused on PV systems and on Solid state lighting technologies.

Recent advances in application of UV light-emitting diodes for degrading organic pollutants in water through advanced oxidation processes: A review.

PubMed

Matafonova, Galina; Batoev, Valeriy

2018-04-01

Over the last decade, ultraviolet light-emitting diodes (UV LEDs) have attracted considerable attention as alternative mercury-free UV sources for water treatment purposes. This review is a comprehensive analysis of data reported in recent years (mostly, post 2014) on the application of UV LED-induced advanced oxidation processes (AOPs) to degrade organic pollutants, primarily dyes, phenols, pharmaceuticals, insecticides, estrogens and cyanotoxins, in aqueous media. Heterogeneous TiO 2 -based photocatalysis in lab grade water using UVA LEDs is the most frequently applied method for treating organic contaminants. The effects of controlled periodic illumination, different TiO 2 -based nanostructures and reactor types on degradation kinetics and mineralization are discussed. UVB and UVC LEDs have been used for photo-Fenton, photo-Fenton-like and UV/H 2 O 2 treatment of pollutants, primarily, in model aqueous solutions. Notably, UV LED-activated persulfate/peroxymonosulfate processes were capable of providing degradation in DOC-containing waters. Wall-plug efficiency, energy-efficiency of UV LEDs and the energy requirements in terms of Electrical Energy per Order (E EO ) are discussed and compared. Despite the overall high degradation efficiency of the UV LED-based AOPs, practical implementation is still limited and at lab scale. More research on real water matrices at more environmentally relevant concentrations, as well as an estimation of energy requirements providing fluence-based kinetic data are required. Copyright © 2018 Elsevier Ltd. All rights reserved.

LED luminaire longevity strategy models comparison

NASA Astrophysics Data System (ADS)

Lemieux, Hugo; Thibault, Simon; Martel, Alain A.

2010-08-01

As energy efficiency becomes more and more important, light-emitting diodes (LEDs) are a promising alternative to traditional lighting. Indeed, the energy efficiency of LEDs is still improving as their luminosity is modulated by current. Moreover, for applications such as exterior lamp posts, their small size, directionality, colors and high frequency response allow to combine them and provide design possibilities which are impossible with any other light source. However, as any lamp, LEDs have a lumen depreciation which is a function of both current and temperature. Thus, to take advantage of the full characteristics of LEDs, LED luminaire longevity strategies must be carefully studied and planned, especially since the IES and CIE guidelines state clearly that the luminaire must maintain the rated recommended light level until the end of the system's operating life. The recommended approach for LED luminaire specification is therefore to use the end-of-life light level when evaluating the luminaire. Different power supply strategies have been simulated to determine which one maximizes energy saving and lifetime. With these results, it appears that active control can save at least 25% in energy, but the best strategy cannot be determined because of uncertainties in luminosity degradation models.

Quality engineering tools focused on high power LED driver design using boost power stages in switch mode

NASA Astrophysics Data System (ADS)

Ileana, Ioan; Risteiu, Mircea; Marc, Gheorghe

2016-12-01

This paper is a part of our research dedicated to high power LED lamps designing. The boost-up selected technology wants to meet driver producers' tendency in the frame of efficiency and disturbances constrains. In our work we used modeling and simulation tools for implementing scenarios of the driver work when some controlling functions are executed (output voltage/ current versus input voltage and fixed switching frequency, input and output electric power transfer versus switching frequency, transient inductor voltage analysis, and transient out capacitor analysis). Some electrical and thermal stress conditions are also analyzed. Based on these aspects, a high reliable power LED driver has been designed.

Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene

NASA Astrophysics Data System (ADS)

Cho, Chu-Young; Choe, Minhyeok; Lee, Sang-Jun; Hong, Sang-Hyun; Lee, Takhee; Lim, Wantae; Kim, Sung-Tae; Park, Seong-Ju

2013-03-01

We report on gold (Au)-doped multi-layer graphene (MLG), which can be used as a transparent conducting layer in near-ultraviolet light-emitting diodes (NUV-LEDs). The optical output power of NUV-LEDs with thermally annealed Au-doped MLG was increased by 34% compared with that of NUV-LEDs with a bare MLG. This result is attributed to the reduced sheet resistance and the enhanced current injection efficiency of NUV-LEDs by the thermally annealed Au-doped MLG film, which shows high transmittance in NUV and UV regions and good adhesion of Au-doped MLG on p-GaN layer of NUV-LEDs.

Low-picomolar limits of detection using high-power light-emitting diodes for fluorescence.

PubMed

de Jong, Ebbing P; Lucy, Charles A

2006-05-01

Fluorescence detectors are ever more frequently being used with light-emitting diodes (LEDs) as the light source. Technological advances in the solid-state lighting industry have produced LEDs which are also suitable tools in analytical measurements. LEDs are now available which deliver 700 mW of radiometric power. While this greater light power can increase the fluorescence signal, it is not trivial to make proper use of this light. This new generation of LEDs has a large emitting area and a highly divergent beam. This presents a classic problem in optics where one must choose between either a small focused light spot, or high light collection efficiency. We have selected for light collection efficiency, which yields a light spot somewhat larger than the emitting area of the LED. This light is focused onto a flow cell. Increasing the detector cell internal diameter (i.d.) produces gains in (sensitivity)3. However, since the detector cell i.d. is smaller than the LED spot size, scattering of excitation light towards the detector remains a significant source of background signal. This can be minimized through the use of spectral filters and spatial filters in the form of pinholes. The detector produced a limit of detection (LOD) of 3 pM, which is roughly three orders of magnitude lower than other reports of LED-based fluorescence detectors. Furthermore, this LOD comes within a factor of six of much more expensive laser-based fluorescence systems. This detector has been used to monitor a separation from a gel filtration column of fluorescently labeled BSA from residual labeling reagent. The LOD of fluorescently labeled BSA is 25 pM.

LED Solar Simulator

NASA Image and Video Library

2016-11-18

NASA Glenn's new LED solar simulator was developed by Angstrom Designs and UC Santa Barbara under a Small Business Innovative Research program to test the next generation of high-efficiency space solar cells for future missions. The new simulator contains over 1500 individually adjustable light sources, most of which emit light invisible to the human eye, to cover a 10 x10 foot area.

LED Solar Simulator

NASA Image and Video Library

2016-11-16

NASA Glenn's new LED solar simulator was developed by Angstrom Designs and UC Santa Barbara under a Small Business Innovative Research program to test the next generation of high-efficiency space solar cells for future missions. The new simulator contains over 1500 individually adjustable light sources, most of which emit light invisible to the human eye, to cover a 10 x10 foot area.

InGaN light-emitting diodes with highly transparent ZnO:Ga electrodes

NASA Astrophysics Data System (ADS)

Liu, H. Y.; Li, X.; Ni, X.; Avrutin, V.; Izyumskaya, N.; Özgür, Ü.; Morkoç, H.

2010-03-01

InGaN light-emitting diodes (LEDs) utilizing ZnO layers heavily doped with Ga (GZO) as transparent p-electrodes were fabricated and their characteristics were demonstrated to be superior to those of LEDs with metal Ni/Au electrodes. Highly conductive and highly transparent GZO films were grown on p-GaN contact layers of the LED structures by plasma-assisted molecular beam epitaxy under metal-rich conditions. The c and a lattice constants of GZO were found to be close to the bulk values, indicating small lattice distortion of GZO. The as-grown GZO films showed resistivities as low as 2.2-2.9×10-4 Ω cm. Upon rapid thermal annealing at the optimum temperature of 675 °C, the resistivity decreased reaching a value of ~1.9×10-4 Ω cm. Unlike the LEDs with Ni/Au contacts, the LEDs with GZO electrodes showed no filamentation and very uniform light emission at high current densities. The peak value of the relative external quantum efficiency for the LEDs with GZO contacts has substantial improvement compared with that for the LEDs with Ni/Au contacts. Under pulsed excitation mode, GZO-LEDs withstood current densities up to 5000 A/cm2.

Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/ InGaN multiple quantum wells on ternary InGaN substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ooi, Yu Kee, E-mail: Yu.Kee.Ooi@rit.edu; Zhang, Jing, E-mail: Jing.Zhang@rit.edu

2015-05-15

Phosphor-free monolithic white light emitting diodes (LEDs) based on InGaN/ InGaN multiple quantum wells (MQWs) on ternary InGaN substrates are proposed and analyzed in this study. Simulation studies show that LED devices composed of multi-color-emitting InGaN/ InGaN quantum wells (QWs) employing ternary InGaN substrate with engineered active region exhibit stable white color illumination with large output power (∼ 170 mW) and high external quantum efficiency (EQE) (∼ 50%). The chromaticity coordinate for the investigated monolithic white LED devices are located at (0.30, 0.28) with correlated color temperature (CCT) of ∼ 8200 K at J = 50 A/cm{sup 2}. A referencemore » LED device without any nanostructure engineering exhibits green color emission shows that proper engineered structure is essential to achieve white color illumination. This proof-of-concept study demonstrates that high-efficiency and cost-effective phosphor-free monolithic white LED is feasible by the use of InGaN/ InGaN MQWs on ternary InGaN substrate combined with nanostructure engineering, which would be of great impact for solid state lighting.« less

All Solution-processed Stable White Quantum Dot Light-emitting Diodes with Hybrid ZnO@TiO2 as Blue Emitters

PubMed Central

Chen, Jing; Zhao, Dewei; Li, Chi; Xu, Feng; Lei, Wei; Sun, Litao; Nathan, Arokia; Sun, Xiao Wei

2014-01-01

White quantum dot light-emitting diodes (QD-LEDs) have been a promising candidate for high-efficiency and color-saturated displays. However, it is challenging to integrate various QD emitters into one device and also to obtain efficient blue QDs. Here, we report a simply solution-processed white QD-LED using a hybrid ZnO@TiO2 as electron injection layer and ZnCdSeS QD emitters. The white emission is obtained by integrating the yellow emission from QD emitters and the blue emission generated from hybrid ZnO@TiO2 layer. We show that the performance of white QD-LEDs can be adjusted by controlling the driving force for hole transport and electroluminescence recombination region via varying the thickness of hole transport layer. The device is demonstrated with a maximum luminance of 730 cd/m2 and power efficiency of 1.7 lm/W, exhibiting the Commission Internationale de l'Enclairage (CIE) coordinates of (0.33, 0.33). The unencapsulated white QD-LED has a long lifetime of 96 h at its initial luminance of 730 cd/m2, primarily due to the fact that the device with hybrid ZnO@TiO2 has low leakage current and is insensitive to the oxygen and the moisture. These results indicate that hybrid ZnO@TiO2 provides an alternate and effective approach to achieve high-performance white QD-LEDs and also other optoelectronic devices. PMID:24522341

Color-Pure Violet-Light-Emitting Diodes Based on Layered Lead Halide Perovskite Nanoplates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang, Dong; Peng, Yuelin; Fu, Yongping

Violet electroluminescence is rare in both inorganic and organic light-emitting diodes (LEDs). Low-cost and room- temperature solution-processed lead halide perovskites with high- efficiency and color-tunable photoluminescence are promising for LEDs. Here, we report room-temperature color-pure violet LEDs based on a two-dimensional lead halide perovskite material, namely, 2-phenylethylammonium (C 6H 5CH 2CH 2NH 3 +, PEA) lead bromide [(PEA) 2PbBr 4]. The natural quantum confinement of two-dimen- sional layered perovskite (PEA) 2PbBr 4 allows for photoluminescence of shorter wavelength (410 nm) than its three-dimensional counterpart. By converting as-deposited polycrystalline thin films to micrometer-sized (PEA) 2PbBr 4 nanoplates using solvent vapor annealing,more » we successfully integrated this layered perovskite material into LEDs and achieved efficient room-temperature violet electroluminescence at 410 nm with a narrow bandwidth. This conversion to nanoplates significantly enhanced the crystallinity and photophysical properties of the (PEA) 2PbBr 4 samples and the external quantum efficiency of the violet LED. Finally, the solvent vapor annealing method reported herein can be generally applied to other perovskite materials to increase their grain size and, ultimately, improve the performance of optoelectronic devices based on perovskite materials.« less

Color-Pure Violet-Light-Emitting Diodes Based on Layered Lead Halide Perovskite Nanoplates

DOE PAGES

Liang, Dong; Peng, Yuelin; Fu, Yongping; ...

2016-06-23

Violet electroluminescence is rare in both inorganic and organic light-emitting diodes (LEDs). Low-cost and room- temperature solution-processed lead halide perovskites with high- efficiency and color-tunable photoluminescence are promising for LEDs. Here, we report room-temperature color-pure violet LEDs based on a two-dimensional lead halide perovskite material, namely, 2-phenylethylammonium (C 6H 5CH 2CH 2NH 3 +, PEA) lead bromide [(PEA) 2PbBr 4]. The natural quantum confinement of two-dimen- sional layered perovskite (PEA) 2PbBr 4 allows for photoluminescence of shorter wavelength (410 nm) than its three-dimensional counterpart. By converting as-deposited polycrystalline thin films to micrometer-sized (PEA) 2PbBr 4 nanoplates using solvent vapor annealing,more » we successfully integrated this layered perovskite material into LEDs and achieved efficient room-temperature violet electroluminescence at 410 nm with a narrow bandwidth. This conversion to nanoplates significantly enhanced the crystallinity and photophysical properties of the (PEA) 2PbBr 4 samples and the external quantum efficiency of the violet LED. Finally, the solvent vapor annealing method reported herein can be generally applied to other perovskite materials to increase their grain size and, ultimately, improve the performance of optoelectronic devices based on perovskite materials.« less

An AlGaN Core-Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band.

PubMed

Sadaf, S M; Zhao, S; Wu, Y; Ra, Y-H; Liu, X; Vanka, S; Mi, Z

2017-02-08

To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV) spectral range exhibit very low efficiency due to the presence of large densities of defects and extremely inefficient p-type conduction of conventional AlGaN quantum well heterostructures. We have demonstrated that such critical issues can be potentially addressed by using nearly defect-free AlGaN tunnel junction core-shell nanowire heterostructures. The core-shell nanowire arrays exhibit high photoluminescence efficiency (∼80%) in the UV-C band at room temperature. With the incorporation of an epitaxial Al tunnel junction, the p-(Al)GaN contact-free nanowire deep UV LEDs showed nearly one order of magnitude reduction in the device resistance, compared to the conventional nanowire p-i-n device. The unpackaged Al tunnel junction deep UV LEDs exhibit an output power >8 mW and a peak external quantum efficiency ∼0.4%, which are nearly one to two orders of magnitude higher than previously reported AlGaN nanowire devices. Detailed studies further suggest that the maximum achievable efficiency is limited by electron overflow and poor light extraction efficiency due to the TM polarized emission.

Origins of low energy-transfer efficiency between patterned GaN quantum well and CdSe quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xingsheng, E-mail: xsxu@semi.ac.cn

For hybrid light emitting devices (LEDs) consisting of GaN quantum wells and colloidal quantum dots, it is necessary to explore the physical mechanisms causing decreases in the quantum efficiencies and the energy transfer efficiency between a GaN quantum well and CdSe quantum dots. This study investigated the electro-luminescence for a hybrid LED consisting of colloidal quantum dots and a GaN quantum well patterned with photonic crystals. It was found that both the quantum efficiency of colloidal quantum dots on a GaN quantum well and the energy transfer efficiency between the patterned GaN quantum well and the colloidal quantum dots decreasedmore » with increases in the driving voltage or the driving time. Under high driving voltages, the decreases in the quantum efficiency of the colloidal quantum dots and the energy transfer efficiency can be attributed to Auger recombination, while those decreases under long driving time are due to photo-bleaching and Auger recombination.« less

LED lighting increases the ecological impact of light pollution irrespective of color temperature.

PubMed

Pawson, S M; Bader, M K-F

Recognition of the extent and magnitude of night-time light pollution impacts on natural ecosystems is increasing, with pervasive effects observed in both nocturnal and diurnal species. Municipal and industrial lighting is on the cusp of a step change where energy-efficient lighting technology is driving a shift from “yellow” high-pressure sodium vapor lamps (HPS) to new “white” light-emitting diodes (LEDs). We hypothesized that white LEDs would be more attractive and thus have greater ecological impacts than HPS due to the peak UV-green-blue visual sensitivity of nocturnal invertebrates. Our results support this hypothesis; on average LED light traps captured 48% more insects than were captured with light traps fitted with HPS lamps, and this effect was dependent on air temperature (significant light × air temperature interaction). We found no evidence that manipulating the color temperature of white LEDs would minimize the ecological impacts of the adoption of white LED lights. As such, large-scale adoption of energy-efficient white LED lighting for municipal and industrial use may exacerbate ecological impacts and potentially amplify phytosanitary pest infestations. Our findings highlight the urgent need for collaborative research between ecologists and electrical engineers to ensure that future developments in LED technology minimize their potential ecological effects.

Thermal management of LEDs: package to system

NASA Astrophysics Data System (ADS)

Arik, Mehmet; Becker, Charles A.; Weaver, Stanton E.; Petroski, James

2004-01-01

Light emitting diodes, LEDs, historically have been used for indicators and produced low amounts of heat. The introduction of high brightness LEDs with white light and monochromatic colors have led to a movement towards general illumination. The increased electrical currents used to drive the LEDs have focused more attention on the thermal paths in the developments of LED power packaging. The luminous efficiency of LEDs is soon expected to reach over 80 lumens/W, this is approximately 6 times the efficiency of a conventional incandescent tungsten bulb. Thermal management for the solid-state lighting applications is a key design parameter for both package and system level. Package and system level thermal management is discussed in separate sections. Effect of chip packages on junction to board thermal resistance was compared for both SiC and Sapphire chips. The higher thermal conductivity of the SiC chip provided about 2 times better thermal performance than the latter, while the under-filled Sapphire chip package can only catch the SiC chip performance. Later, system level thermal management was studied based on established numerical models for a conceptual solid-state lighting system. A conceptual LED illumination system was chosen and CFD models were created to determine the availability and limitations of passive air-cooling.

A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation

NASA Astrophysics Data System (ADS)

Morawiec, Seweryn; Sarzała, Robert P.; Nakwaski, Włodzimierz

2013-11-01

Polarization effects are studied within nitride light-emitting diodes (LEDs) manufactured on standard polar and semipolar substrates. A new theoretical approach, somewhat different than standard ones, is proposed to this end. It is well known that when regular polar GaN substrates are used, strong piezoelectric and spontaneous polarizations create built-in electric fields leading to the quantum-confined Stark effects (QCSEs). These effects may be completely avoided in nonpolar crystallographic orientations, but then there are problems with manufacturing InGaN layers of relatively high Indium contents necessary for the green emission. Hence, a procedure leading to partly overcoming these polarization problems in semi-polar LEDs emitting green radiation is proposed. The (11 22) crystallographic substrate orientation (inclination angle of 58∘ to c plane) seems to be the most promising because it is characterized by low Miller-Bravais indices leading to high-quality and high Indium content smooth growth planes. Besides, it makes possible an increased Indium incorporation efficiency and it is efficient in suppressing QCSE. The In0.3Ga0.7N/GaN QW LED grown on the semipolar (11 22) substrate has been found as currently the optimal LED structure emitting green radiation.

GaN Light-Emitting Triodes (LETs) for High-Efficiency Hole Injection and for Assessment of the Physical Origin of the Efficiency Droop

DTIC Science & Technology

2007-07-06

quantum efficiency . In AlGaN-based UV LEDs, an electron-blocking layer (EBL) is frequently inserted between the p-type cladding layer and the active...me). This limits the hole injection efficiency into the active region, and hence internal quantum efficiency . Figure 1: (a) Schematic band...less efficient than along the lateral direction because most of the holes ionized from the acceptors are localized inside the quantum wells which are

Combined selective emitter and filter for high performance incandescent lighting

NASA Astrophysics Data System (ADS)

Leroy, Arny; Bhatia, Bikram; Wilke, Kyle; Ilic, Ognjen; Soljačić, Marin; Wang, Evelyn N.

2017-08-01

The efficiency of incandescent light bulbs (ILBs) is inherently low due to the dominant emission at infrared wavelengths, diminishing its popularity today. ILBs with cold-side filters that transmit visible light but reflect infrared radiation back to the filament can surpass the efficiency of state-of-the-art light-emitting diodes (LEDs). However, practical challenges such as imperfect geometrical alignment (view factor) between the filament and cold-side filters can limit the maximum achievable efficiency and make the use of cold-side filters ineffective. In this work, we show that by combining a cold-side optical filter with a selective emitter, the effect of the imperfect view factor between the filament and filter on the system efficiency can be minimized. We experimentally and theoretically demonstrate energy savings of up to 67% compared to a bare tungsten emitter at 2000 K, representing a 34% improvement over a bare tungsten filament with a filter. Our work suggests that this approach can be competitive with LEDs in both luminous efficiency and color rendering index (CRI) when using selective emitters and filters already demonstrated in the literature, thus paving the way for next-generation high-efficiency ILBs.

Combined selective emitter and filter for high performance incandescent lighting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leroy, Arny; Bhatia, Bikram; Wilke, Kyle

The efficiency of incandescent light bulbs (ILBs) is inherently low due to the dominant emission at infrared wavelengths, diminishing its popularity today. ILBs with cold-side filters that transmit visible light but reflect infrared radiation back to the filament can surpass the efficiency of state-of-the- art light-emitting diodes (LEDs). However, practical challenges such as imperfect geometrical alignment (view factor) between the filament and cold-side filters can limit the maximum achievable efficiency and make the use of cold-side filters ineffective. Here in this work, we show that by combining a cold-side optical filter with a selective emitter, the effect of the imperfectmore » view factor between the filament and filter on the system efficiency can be minimized. We experimentally and theoretically demonstrate energy savings of up to 67% compared to a bare tungsten emitter at 2000 K, representing a 34% improvement over a bare tungsten filament with a filter. Our work suggests that this approach can be competitive with LEDs in both luminous efficiency and color rendering index (CRI) when using selective emitters and filters already demonstrated in the literature, thus paving the way for next-generation high-efficiency ILBs.« less

Combined selective emitter and filter for high performance incandescent lighting

DOE PAGES

Leroy, Arny; Bhatia, Bikram; Wilke, Kyle; ...

2017-09-01

The efficiency of incandescent light bulbs (ILBs) is inherently low due to the dominant emission at infrared wavelengths, diminishing its popularity today. ILBs with cold-side filters that transmit visible light but reflect infrared radiation back to the filament can surpass the efficiency of state-of-the- art light-emitting diodes (LEDs). However, practical challenges such as imperfect geometrical alignment (view factor) between the filament and cold-side filters can limit the maximum achievable efficiency and make the use of cold-side filters ineffective. Here in this work, we show that by combining a cold-side optical filter with a selective emitter, the effect of the imperfectmore » view factor between the filament and filter on the system efficiency can be minimized. We experimentally and theoretically demonstrate energy savings of up to 67% compared to a bare tungsten emitter at 2000 K, representing a 34% improvement over a bare tungsten filament with a filter. Our work suggests that this approach can be competitive with LEDs in both luminous efficiency and color rendering index (CRI) when using selective emitters and filters already demonstrated in the literature, thus paving the way for next-generation high-efficiency ILBs.« less

Recent advances in the science and technology for solid state lighting

NASA Astrophysics Data System (ADS)

Munkholm, Anneli

2003-03-01

Recent development of high power light emitting diodes (LEDs) has enabled fabrication of solid state devices with efficiencies that surpass that of incandescent light, as well as providing a total light output significantly exceeding that of conventional indicator LEDs. This breakthrough in high flux is opening up new applications for use of high power LEDs, such as liquid crystal display backlighting and automotive headlights. Some of the key elements to this technological breakthrough are the flip-chip device design, power packaging and phosphor coating technology, which will be discussed. In addition to device design improvements, our fundamental knowledge of the III-nitride material system is improving and has resulted in higher internal quantum efficiencies. Strain plays a significant role in complex AlInGaN heterostructures used in current devices. Using a multi-beam optical strain sensor (MOSS) system to measure the wafer curvature in situ, we have characterized the strain during metal-organic chemical vapor deposition of III-nitrides. Strain measurements of InGaN, AlGaN and Si-doped GaN films on GaN will be presented.

Feasibility of ultraviolet-light-emitting diodes as an alternative light source for photocatalysis.

PubMed

Levine, Lanfang H; Richards, Jeffrey T; Coutts, Janelle L; Soler, Robert; Maxik, Fred; Wheeler, Raymond M

2011-09-01

The objective of this study was to determine whether ultraviolet-light-emitting diodes (UV-LEDs) could serve as an efficient photon source for heterogeneous photocatalytic oxidation (PCO). An LED module consisting of 12 high-power UV-A (lambda max = 365 nm) LEDs was designed to be interchangeable with a UV-A fluorescent black light blue (BLB) lamp for a bench scale annular reactor packed with silica-titania composite (STC) pellets. Lighting and thermal properties of the module were characterized to assess its uniformity and total irradiance. A forward current (I(F)) of 100 mA delivered an average irradiance of 4.0 mW cm(-2) at a distance of 8 mm, which is equivalent to the maximum output of the BLB, but the irradiance of the LED module was less uniform than that of the BLB. The LED and BLB reactors were tested for the oxidization of ethanol (50 ppm(v)) in a continuous-flow-through mode with 0.94 sec residence time. At the same average irradiance, the UV-A LED reactor resulted in a lower CO2 production rate (19.8 vs. 28.6 nmol L(-1) s(-1)), lower ethanol removal (80% vs. 91%), and lower mineralization efficiency (28% vs. 44%) than the UV-A BLB reactor. Ethanol mineralization was enhanced with the increase of the irradiance at the catalyst surface. This result suggests that reduced ethanol mineralization in the LED reactor relative to the BLB reactor at the same average irradiance could be attributed to the nonuniform irradiance over the photocatalyst, that is, a portion of the catalyst was exposed to less than the average irradiance. The potential of UV-A LEDs may be fully realized by optimizing the light distribution over the catalyst and utilizing their instantaneous "on" and "off" feature for periodic irradiation. Nevertheless, our results also showed that the current UV-A LED module had the same wall plug efficiency (WPE) of 13% as that of the UV-A BLB, demonstrating that UV-A LEDs are a viable photon source both in terms of WPE and PCO efficiency.

Progress in extremely high brightness LED-based light sources

NASA Astrophysics Data System (ADS)

Hoelen, Christoph; Antonis, Piet; de Boer, Dick; Koole, Rolf; Kadijk, Simon; Li, Yun; Vanbroekhoven, Vincent; Van De Voorde, Patrick

2017-09-01

Although the maximum brightness of LEDs has been increasing continuously during the past decade, their luminance is still far from what is required for multiple applications that still rely on the high brightness of discharge lamps. In particular for high brightness applications with limited étendue, e.g. front projection, only very modest luminance values in the beam can be achieved with LEDs compared to systems based on discharge lamps or lasers. With dedicated architectures, phosphor-converted green LEDs for projection may achieve luminance values up to 200-300 Mnit. In this paper we report on the progress made in the development of light engines based on an elongated luminescent concentrator pumped by blue LEDs. This concept has recently been introduced to the market as ColorSpark High Lumen Density LED technology. These sources outperform the maximum brightness of LEDs by multiple factors. In LED front projection, green LEDs are the main limiting factor. With our green modules, we now have achieved peak luminance values of 2 Gnit, enabling LED-based projection systems with over 4000 ANSI lm. Extension of this concept to yellow and red light sources is presented. The light source efficiency has been increased considerably, reaching 45-60 lm/W for green under practical application conditions. The module architecture, beam shaping, and performance characteristics are reviewed, as well as system aspects. The performance increase, spectral range extensions, beam-shaping flexibility, and cost reductions realized with the new module architecture enable a breakthrough in LED-based projection systems and in a wide variety of other high brightness applications.

Improvements to III-nitride light-emitting diodes through characterization and material growth

NASA Astrophysics Data System (ADS)

Getty, Amorette Rose Klug

A variety of experiments were conducted to improve or aid the improvement of the efficiency of III-nitride light-emitting diodes (LEDs), which are a critical area of research for multiple applications, including high-efficiency solid state lighting. To enhance the light extraction in ultraviolet LEDs grown on SiC substrates, a distributed Bragg reflector (DBR) optimized for operation in the range from 250 to 280 nm has been developed using MBE growth techniques. The best devices had a peak reflectivity of 80% with 19.5 periods, which is acceptable for the intended application. DBR surfaces were sufficiently smooth for subsequent epitaxy of the LED device. During the course of this work, pros and cons of AlGaN growth techniques, including analog versus digital alloying, were examined. This work highlighted a need for more accurate values of the refractive index of high-Al-content AlxGa1-xNin the UV wavelength range. We present refractive index results for a wide variety of materials pertinent to the fabrication of optical III-nitride devices. Characterization was done using Variable-Angle Spectroscopic Ellipsometry. The three binary nitrides, and all three ternaries, have been characterized to a greater or lesser extent depending on material compositions available. Semi-transparent p-contact materials and other thin metals for reflecting contacts have been examined to allow optimization of deposition conditions and to allow highly accurate modeling of the behavior of light within these devices. Standard substrate materials have also been characterized for completeness and as an indicator of the accuracy of our modeling technique. We have demonstrated a new technique for estimating the internal quantum efficiency (IQE) of nitride light-emitting diodes. This method is advantageous over the standard low-temperature photoluminescence-based method of estimating IQE, as the new method is conducted under the same conditions as normal device operation. We have developed processing techniques and have characterized patternable absorbing materials which eliminate scattered light within the device, allowing an accurate simulation of the device extraction efficiency. This efficiency, with measurements of the input current and optical output power, allow a straightforward calculation of the IQE. Two sets of devices were measured, one of material grown in-house, with a rough p-GaN surface, and one of commercial LED material, with smooth interfaces and very high internal quantum efficiency.

Compact light-emitting diode lighting ring for video-assisted thoracic surgery.

PubMed

Lu, Ming-Kuan; Chang, Feng-Chen; Wang, Wen-Zhe; Hsieh, Chih-Cheng; Kao, Fu-Jen

2014-01-01

In this work, a foldable ring-shaped light-emitting diode (LED) lighting assembly, designed to attach to a rubber wound retractor, is realized and tested through porcine animal experiments. Enabled by the small size and the high efficiency of LED chips, the lighting assembly is compact, flexible, and disposable while providing direct and high brightness lighting for more uniform background illumination in video-assisted thoracic surgery (VATS). When compared with a conventional fiber bundle coupled light source that is usually used in laparoscopy and endoscopy, the much broader solid angle of illumination enabled by the LED assembly allows greatly improved background lighting and imaging quality in VATS.

A perspective perception on the applications of light-emitting diodes.

PubMed

Nair, Govind B; Dhoble, S J

2015-12-01

Light-emitting diodes (LEDs) continue to penetrate the global market; their pervasiveness clearly being felt in such diverse fields as technological, socio-economic and commercial interests. The multi-billion dollar LED market is shared by various segments, including office and household lighting, street lighting, the automobile industry, traffic signals, backlighting for hand-held devices, indoor and outdoor signs and indicators, medicine, communication systems, crop cultivation using artificial light and many more. The technological development of LEDs has undergone many phases in different parts of the world. From the early discovery of luminescence to the invention of highly efficient organic LEDs, researchers have worked with the prime purpose of improving the performance of luminaires. The need to infuse the market with more efficient and cheaper products has been prevalent from the start. LEDs are a result of this uncontrolled desire of researchers to develop superior products that would displace existing products in the market. To understand what led to the current prominence of LEDs, we give a brief historical overview of the field followed by a thorough discussion of the positive features of LEDs. This work includes the basic requirements, advantages and disadvantages of LEDs in a variety of applications. A brief description of the diverse applications of LED in fields such as lighting, indicators and displays, farming, medicine and communication is given. Considerable importance is placed on discussing the possible difficulties that must be overcome before using LEDs in commercial applications. Copyright © 2015 John Wiley & Sons, Ltd.

Optimized optical wireless channel for indoor and intra-vehicle communications: power distribution and SNR analysis

NASA Astrophysics Data System (ADS)

Shaaban, Rana; Faruque, Saleh

2018-01-01

Light emitting diodes - LEDs are modernizing the indoor illumination and replacing current incandescent and fluorescent lamps rapidly. LEDs have multiple advantages such as extremely high energy efficient, longer lifespan, and lower heat generation. Due to the ability to switch to different light intensity at a very fast rate, LED has given rise to a unique communication technology (visible light communication - VLC) used for high speed data transmission. By studying various kinds of commonly used VLC channel analysis: diffuse and line of sight channels, we presented a simply improved indoor and intra-vehicle visible light communication transmission model. Employing optical wireless communications within the vehicle, not only enhance user mobility, but also alleviate radio frequency interference, and increase efficiency by lowering the complexity of copper cabling. Moreover, a solution to eliminate ambient noise caused by environmental conditions is examined by using optical differential receiver. The simulation results show the improved received power distribution and signal to noise ratio - SNR.

Improving Efficiency of III-N Quantum Well Based Optoelectronic Devices through Active Region Design and Growth Techniques

NASA Astrophysics Data System (ADS)

Young, Nathan Garrett

The III-Nitride materials system provides a fascinating platform for developing optoelectronic devices, such as solar cells and LEDs, which have the power to dramatically improve the efficiency of our power consumption and reduce our environmental footprint. Finding ways to make these devices more efficient is key to driving their widespread adoption. This dissertation focuses on the intersection of challenges in physics and metalorganic chemical vapor deposition (MOCVD) growth at the nanoscale when designing for device efficiency. In order to create the best possible InGaN solar cell, a multiple quantum well (MQW) active region design had to be employed to prevent strain relaxation related degradation. There were two competing challenges for MQW active region design and growth. First, it was observed current collection efficiency improved with thinner quantum barriers, which promoted efficient tunneling transport instead of inefficiency thermally activated escape. Second, GaN barriers could planarize surface defects in the MQW region under the right conditions and when grown thick enough. A two-step growth method for thinner quantum barriers was developed that simultaneously allowed for tunneling transport and planarized V-defects. Barriers as thin as 4 nm were employed in MQW active regions with up to 30 periods without structural or electrical degradation, leading to record performance. Application of dielectric optical coatings greatly reduced surface reflections and allowed a second pass of light through the device. This both demonstrated the feasibility of multijunction solar integration and boosted conversion efficiency to record levels for an InGaN solar cell. III-N LEDs have achieved state-of-the-art performance for decades, but still suffer from the phenomena of efficiency droop, where device efficiency drops dramatically at high power operation. Droop is exacerbated by the polarization-induced electric fields in InGaN quantum wells, which originate from a lack of inversion symmetry in GaN's wurtzite crystal structure. These fields can be screened by using highly doped layers, but the extreme dopant densities predicted by simulation for complete screening may require using Ge as an alternative n-type dopant to Si. GaN:Ge layers with excellent electrical characteristics were grown by MOCVD with doping densities exceeding 1020 cm -3. However, their surface morphologies were very poor and they proved a poor screening dopant in LED structures. Using Si as the n-type screening dopant, LEDs with single QW active regions were grown, packaged, and tested. Biased photoluminescence showed strong evidence of complete polarization screening. The LEDs had low droop, but also low peak efficiencies. Possible explanations for trends in efficiency with varying QW width and field screening will be discussed.

Color adjustable LED driver design based on PWM

NASA Astrophysics Data System (ADS)

Du, Yiying; Yu, Caideng; Que, Longcheng; Zhou, Yun; Lv, Jian

2012-10-01

Light-emitting diode (LED) is a liquid cold source light source that rapidly develops in recent years. The merits of high brightness efficiency, long duration, high credibility and no pollution make it satisfy our demands for consumption and natural life, and gradually replace the traditional lamp-house-incandescent light and fluorescent light. However, because of the high cost and unstable drive circuit, the application range is restricted. To popularize the applications of the LED, we focus on improving the LED driver circuit to change this phenomenon. Basing on the traditional LED drive circuit, we adopt pre-setup constant current model and introduce pulse width modulation (PWM) control method to realize adjustable 256 level-grays display. In this paper, basing on human visual characteristics and the traditional PWM control method, we propose a new PWM control timing clock to alter the duty cycle of PWM signal to realize the simple gamma correction. Consequently, the brightness can accord with our visual characteristics.

Smart LED allocation scheme for efficient multiuser visible light communication networks.

PubMed

Sewaiwar, Atul; Tiwari, Samrat Vikramaditya; Chung, Yeon Ho

2015-05-18

In a multiuser bidirectional visible light communication (VLC), a large number of LEDs or an LED array needs to be allocated in an efficient manner to ensure sustainable data rate and link quality. Moreover, in order to support an increasing or decreasing number of users in the network, the LED allocation is required to be performed dynamically. In this paper, a novel smart LED allocation scheme for efficient multiuser VLC networks is presented. The proposed scheme allocates RGB LEDs to multiple users in a dynamic and efficient fashion, while satisfying illumination requirements in an indoor environment. The smart LED array comprised of RGB LEDs is divided into sectors according to the location of the users. The allocated sectors then provide optical power concentration toward the users for efficient and reliable data transmission. An algorithm for the dynamic allocation of the LEDs is also presented. To verify its effective resource allocation feature of the proposed scheme, simulations were performed. It is found that the proposed smart LED allocation scheme provides the effect of optical beamforming toward individual users, thereby increasing the collective power concentration of the optical signals on the desirable users and resulting in significantly increased data rate, while ensuring sufficient illumination in a multiuser VLC environment.

InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation.

PubMed

Kim, Sungjoon; Cho, Seongjae; Jeong, Jaedeok; Kim, Sungjun; Hwang, Sungmin; Kim, Garam; Yoon, Sukho; Park, Byung-Gook

2017-03-20

The light-emitting diode (LED) with an improved hole injection and straightforward process integration is proposed. p-type GaN direct hole injection plugs (DHIPs) are formed on locally etched multiple-quantum wells (MQWs) by epitaxial lateral overgrowth (ELO) method. We confirm that the optical output power is increased up to 23.2% at an operating current density of 100 A/cm². Furthermore, in order to identify the origin of improvement in optical performance, the transient light decay time and light intensity distribution characteristics were analyzed on the DHIP LED devices. Through the calculation of the electroluminescence (EL) decay time, internal quantum efficiency (IQE) is extracted along with the recombination parameters, which reveals that the DHIPs have a significant effect on enhancement of radiative recombination and reduction of efficiency droop. Furthermore, the mapping PL reveals that the DHIP LED also has a potential to improve the light extraction efficiency by hexagonal pyramid shaped DHIPs.

Direct design of achromatic lens for Lambertian sources in collimating illumination

NASA Astrophysics Data System (ADS)

Yin, Peng; Xu, Xiping; Jiang, Zhaoguo; Wang, Hongshu

2017-10-01

Illumination design used to redistribute the spatial energy distribution of light source is a key technique in lighting applications. However, there is still no effective illumination design method for the removing of the chromatic dispersion. What we present here is an achromatic lens design to enhance the efficiency and uniform illumination of white light-emitting diode (LED) with diffractive optical element (DOE). We employ the chromatic aberration value (deg) to measure the degree of chromatic dispersion in illumination systems. Monte Carlo ray tracing simulation results indicate that the chromatic dispersion of the modified achromatic collimator significantly decreases from 0.5 to 0.1 with LED chip size of 1.0mm×1.0mm and simulation efficiency of 90.73%, compared with the traditional collimator. Moreover, with different corrected wavelengths we compared different chromatic aberration values that followed with the changing pupil percent. The achromatic collimator provided an effective way to achieve white LED with low chromatic dispersion at high efficiency and uniform illumination.

Elimination of resistive losses in large-area LEDs by new diffusion-driven devices

NASA Astrophysics Data System (ADS)

Kivisaari, Pyry; Kim, Iurii; Suihkonen, Sami; Oksanen, Jani

2017-02-01

High-power operation of conventional GaN-based light-emitting diodes (LEDs) is severely limited by current crowding, which increases the bias voltage of the LED, concentrates light emission close to the p-type contact edge, and aggravates the efficiency droop. Fabricating LEDs on thick n-GaN substrates alleviates current crowding but requires the use of expensive bulk GaN substrates and fairly large n-contacts, which take away a large part of the active region (AR). In this work, we demonstrate through comparative simulations how the recently introduced diffusion-driven charge transport (DDCT) concept can be used to realize lateral heterojunction (LHJ) structures, which eliminate most of the lateral current crowding. Specifically in this work, we analyze how using a single-side graded AR can both facilitate electron and hole diffusion in DDCT and increase the effective AR thickness. Our simulations show that the increased effective AR thickness allows a substantial reduction in the efficiency droop at large currents, and that unlike conventional 2D LEDs, the LHJ structure shows practically no added efficiency loss or differential resistance due to current crowding. Furthermore, as both electrons and holes enter the AR from the same side without any notable potential barriers in the LHJ structure, the LHJ structure shows an additional wall-plug efficiency gain over the conventional structures under comparison. This injection from the same side is expected to be even more interesting in multiple quantum well structures, where carriers typically need to surpass several potential barriers in conventional LEDs before recombining. In addition to simulations, we also demonstrate selective-area growth of a finger structure suitable for operation as an LHJ device with 2µm distance between n- and p-GaN regions.

Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients.

PubMed

Monavarian, Morteza; Rashidi, Arman; Aragon, Andrew; Oh, Sang H; Nami, Mohsen; DenBaars, Steve P; Feezell, Daniel

2017-08-07

We report the carrier dynamics and recombination coefficients in single-quantum-well semipolar (202¯1¯) InGaN/GaN light-emitting diodes emitting at 440 nm with 93% peak internal quantum efficiency. The differential carrier lifetime is analyzed for various injection current densities from 5 A/cm 2 to 10 kA/cm 2 , and the corresponding carrier densities are obtained. The coupling of internal quantum efficiency and differential carrier lifetime vs injected carrier density (n) enables the separation of the radiative and nonradiative recombination lifetimes and the extraction of the Shockley-Read-Hall (SRH) nonradiative (A), radiative (B), and Auger (C) recombination coefficients and their n-dependency considering the saturation of the SRH recombination rate and phase-space filling. The results indicate a three to four-fold higher A and a nearly two-fold higher B0 for this semipolar orientation compared to that of c-plane reported using a similar approach [A. David and M. J. Grundmann, Appl. Phys. Lett. 96, 103504 (2010)]. In addition, the carrier density in semipolar (202¯1¯) is found to be lower than the carrier density in c-plane for a given current density, which is important for suppressing efficiency droop. The semipolar LED also shows a two-fold lower C0 compared to c-plane, which is consistent with the lower relative efficiency droop for the semipolar LED (57% vs. 69%). The lower carrier density, higher B 0 coefficient, and lower C 0 (Auger) coefficient are directly responsible for the high efficiency and low efficiency droop reported in semipolar (202¯1¯) LEDs.

Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients

NASA Astrophysics Data System (ADS)

Monavarian, Morteza; Rashidi, Arman; Aragon, Andrew; Oh, Sang H.; Nami, Mohsen; DenBaars, Steve P.; Feezell, Daniel

2017-08-01

We report the carrier dynamics and recombination coefficients in single-quantum-well semipolar $(20\\bar 2\\bar 1)$ InGaN/GaN light-emitting diodes emitting at 440 nm with 93% peak internal quantum efficiency. The differential carrier lifetime is analyzed for various injection current densities from 5 $A/cm^2$ to 10 $kA/cm^2$, and the corresponding carrier densities are obtained. The coupling of internal quantum efficiency and differential carrier lifetime vs injected carrier density ($n$) enables the separation of the radiative and nonradiative recombination lifetimes and the extraction of the Shockley-Read-Hall (SRH) nonradiative ($A$), radiative ($B$), and Auger ($C$) recombination coefficients and their $n$-dependency considering the saturation of the SRH recombination rate and phase-space filling. The results indicate a three to four-fold higher $A$ and a nearly two-fold higher $B_0$ for this semipolar orientation compared to that of $c$-plane reported using a similar approach [A. David and M. J. Grundmann, Appl. Phys. Lett. 96, 103504 (2010)]. In addition, the carrier density in semipolar $(20\\bar 2\\bar 1)$ is found to be lower than the carrier density in $c$-plane for a given current density, which is important for suppressing efficiency droop. The semipolar LED also shows a two-fold lower $C_0$ compared to $c$-plane, which is consistent with the lower relative efficiency droop for the semipolar LED (57% vs. 69%). The lower carrier density, higher $B_0$ coefficient, and lower $C_0$ (Auger) coefficient are directly responsible for the high efficiency and low efficiency droop reported in semipolar $(20\\bar 2\\bar 1)$ LEDs.

Structural control of InP/ZnS core/shell quantum dots enables high-quality white LEDs.

PubMed

Kumar, Baskaran Ganesh; Sadeghi, Sadra; Melikov, Rustamzhon; Aria, Mohammad Mohammadi; Jalali, Houman Bahmani; Ow-Yang, Cleva W; Nizamoglu, Sedat

2018-08-24

Herein, we demonstrate that the structural and optical control of InP-based quantum dots (QDs) can lead to high-performance light-emitting diodes (LEDs). Zinc sulphide (ZnS) shells passivate the InP QD core and increase the quantum yield in green-emitting QDs by 13-fold and red-emitting QDs by 8-fold. The optimised QDs are integrated in the liquid state to eliminate aggregation-induced emission quenching and we fabricated white LEDs with a warm, neutral and cool-white appearance by the down-conversion mechanism. The QD-functionalized white LEDs achieve luminous efficiency (LE) up to 14.7 lm W -1 and colour-rendering index up to 80. The structural and optical control of InP/ZnS core/shell QDs enable 23-fold enhancement in LE of white LEDs compared to ones containing only QDs of InP core.

Full down-conversion of amber-emitting phosphor-converted light-emitting diodes with powder phosphors and a long-wave pass filter.

PubMed

Oh, Jeong Rok; Cho, Sang-Hwan; Park, Hoo Keun; Oh, Ji Hye; Lee, Yong-Hee; Do, Young Rag

2010-05-24

This paper reports the possibility of a facile optical structure to realize a highly efficient monochromatic amber-emitting light-emitting diode (LED) using a powder-based phosphor-converted LED combined with a long-wave pass filter (LWPF). The capping of a blue-reflecting and amber-passing LWPF enhances both the amber emission from the silicate amber phosphor layer and the color purity due to the blocking and recycling of the pumping blue light from the InGaN LED. The enhancement of the luminous efficacy of the amber pc-LED with a LWPF (phosphor concentration 20 wt%, 39.4 lm/W) is 34% over that of an amber pc-LED without a LWPF (phosphor concentration 55 wt%, 29.4 lm/W) at 100 mA and a high color purity (>96%) with Commission International d'Eclairage (CIE) color coordinates of x=0.57 and y=0.42.

Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Kuo, Tsung-Rong; Hung, Shih-Ting; Lin, Yen-Ting; Chou, Tzu-Lin; Kuo, Ming-Cheng; Kuo, Ya-Pei; Chen, Chia-Chun

2017-09-01

Quantum dot light-emitting diodes (QD-LEDs) have been considered as potential display technologies with the characterizations of high color purity, flexibility, transparency, and cost efficiency. For the practical applications, the development of heavy-metal-free QD-LEDs from environment-friendly materials is the most important issue to reduce the impacts on human health and environmental pollution. In this work, heavy-metal-free InP/ZnS core/shell QDs with different fluorescence were prepared by green synthesis method with low cost, safe, and environment-friendly precursors. The InP/ZnS core/shell QDs with maximum fluorescence peak at 530 nm, superior fluorescence quantum yield of 60.1%, and full width at half maximum of 55 nm were applied as an emission layer to fabricate multilayered QD-LEDs. The multilayered InP/ZnS core/shell QD-LEDs showed the turn-on voltage at 5 V, the highest luminance (160 cd/m2) at 12 V, and the external quantum efficiency of 0.223% at 6.7 V. Overall, the multilayered InP/ZnS core/shell QD-LEDs reveal potential to be the heavy-metal-free QD-LEDs for future display applications.

Apparatus and method for measuring single cell and sub-cellular photosynthetic efficiency

DOEpatents

Davis, Ryan Wesley; Singh, Seema; Wu, Huawen

2013-07-09

Devices for measuring single cell changes in photosynthetic efficiency in algal aquaculture are disclosed that include a combination of modulated LED trans-illumination of different intensities with synchronized through objective laser illumination and confocal detection. Synchronization and intensity modulation of a dual illumination scheme were provided using a custom microcontroller for a laser beam block and constant current LED driver. Therefore, single whole cell photosynthetic efficiency, and subcellular (diffraction limited) photosynthetic efficiency measurement modes are permitted. Wide field rapid light scanning actinic illumination is provided for both by an intensity modulated 470 nm LED. For the whole cell photosynthetic efficiency measurement, the same LED provides saturating pulses for generating photosynthetic induction curves. For the subcellular photosynthetic efficiency measurement, a switched through objective 488 nm laser provides saturating pulses for generating photosynthetic induction curves. A second near IR LED is employed to generate dark adapted states in the system under study.

LED lighting efficacy: Status and directions

DOE PAGES

Morgan Pattison, Paul; Hansen, Monica; Tsao, Jeffrey Y.

2017-12-28

A monumental shift from conventional lighting technologies (incandescent, fluorescent, high intensity discharge) to LED lighting is currently transpiring. The primary driver for this shift has been energy and associated cost savings. LED lighting is now more efficacious than any of the conventional lighting technologies with room to still improve. Near term, phosphor converted LED packages have the potential for efficacy improvement from 160 lm/W to 255 lm/W. Longer term, color-mixed LED packages have the potential for efficacy levels conceivably as high as 330 lm/W, though reaching these performance levels requires breakthroughs in green and amber LED efficiency. LED package efficacymore » sets the upper limit to luminaire efficacy, with the luminaire containing its own efficacy loss channels. In this paper, based on analyses performed through the U.S. Department of Energy Solid State Lighting Program, various LED and luminaire loss channels are elucidated, and critical areas for improvement identified. Beyond massive energy savings, LED technology enables a host of new applications and added value not possible or economical with previous lighting technologies. These include connected lighting, lighting tailored for human physiological responses, horticultural lighting, and ecologically conscious lighting. Finally, none of these new applications would be viable if not for the high efficacies that have been achieved, and are themselves just the beginning of what LED lighting can do.« less

LED lighting efficacy: Status and directions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morgan Pattison, Paul; Hansen, Monica; Tsao, Jeffrey Y.

A monumental shift from conventional lighting technologies (incandescent, fluorescent, high intensity discharge) to LED lighting is currently transpiring. The primary driver for this shift has been energy and associated cost savings. LED lighting is now more efficacious than any of the conventional lighting technologies with room to still improve. Near term, phosphor converted LED packages have the potential for efficacy improvement from 160 lm/W to 255 lm/W. Longer term, color-mixed LED packages have the potential for efficacy levels conceivably as high as 330 lm/W, though reaching these performance levels requires breakthroughs in green and amber LED efficiency. LED package efficacymore » sets the upper limit to luminaire efficacy, with the luminaire containing its own efficacy loss channels. In this paper, based on analyses performed through the U.S. Department of Energy Solid State Lighting Program, various LED and luminaire loss channels are elucidated, and critical areas for improvement identified. Beyond massive energy savings, LED technology enables a host of new applications and added value not possible or economical with previous lighting technologies. These include connected lighting, lighting tailored for human physiological responses, horticultural lighting, and ecologically conscious lighting. Finally, none of these new applications would be viable if not for the high efficacies that have been achieved, and are themselves just the beginning of what LED lighting can do.« less

OppoRTUnities Abound

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deru, Michael

According to the U.S. Energy Information Administration, HVAC accounts for approximately 38 percent of U.S. commercial buildings' primary energy consumption and a slightly higher percentage of their greenhouse-gas emissions. We have seen incredible gains made with lighting, going from incandescent and T12 fluorescent bulbs to high-efficiency LEDS, but there are even greater advances to be made with HVAC. Gains of 20 percent to 30 percent easily can be made by replacing older degraded equipment with new high-efficiency equipment. Even more savings are possible with an integrated engineering approach yielding optimized system designs combined with highly efficient controls.

Selective-area nanoheteroepitaxy for light emitting diode (LED) applications

NASA Astrophysics Data System (ADS)

Wildeson, Isaac H.

Over 20% of the electricity in the United States is consumed for lighting, and the majority of this energy is wasted as heat during the lighting process. A solid-state (or light emitting diode (LED)-based) light source has the potential of saving the United States billions of dollars in electricity and reducing megatons of global CO2 emissions annually. While white light LEDs are currently on the market with efficiencies that are superior to incandescent and fluorescent light sources, their high up-front cost is inhibiting mass adoption. One reason for the high cost is the inefficiency of green and amber LEDs that can used to make white light. The inefficiency of green and amber LEDs results in more of these chips being required, and thus a higher cost. Improvements in the performance of green and amber LEDs is also required in order to realize the full potential of solid-state lighting. Nanoheteroepitaxy is an interesting route towards achieving efficient green and amber LEDs as it resolves major challenges that are currently plaguing III-nitride LEDs such as high dislocation densities and limited active region critical thicknesses. A method for fabricating III-nitride nanopyramid LEDs is presented that employs conventional processing used in industry. The present document begins with an overview of the current challenges in III-nitride LEDs and the benefits of nanoheteroepitaxy. A process for controlled selective-area growth of nanopyramid LEDs by organometallic vapor phase epitaxy has been developed throughout the course of this work. Dielectric templates used for the selective-area growth are patterned by two methods, namely porous anodic alumina and electron-beam lithography. The dielectric templates serve as efficient dislocation filters; however, planar defects are initiated during lower temperature growth on the nanopyramids. The quantum wells outline six semipolar planes that form each hexagonal pyramid. Quantum wells grown on these semipolar planes generate built-in electric fields with magnitudes that are one-tenth those on the polar c-plane with the same (In,Ga)N composition. The lateral strain relaxation innate in the nanoheterostructures allows greater coherent InN incorporation in the nanopyramids as compared to thin-film heterostructures, as confirmed by electroluminescence and transmission electron microscopy. In addition to applications for light emitting diodes, selective area growth of GaN nanostructures is also important for biological and sensing applications. A process for fabricating porous GaN nanorods is presented that also relies on selective-area organometallic vapor phase epitaxy. The nanopore walls are primarily outlined by nonpolar planes, and the diameter of the nanopore can be controlled by the diameter of the opening in the dielectric template and the growth time. The lining of the nanopore walls is comprised of crystalline GaN, which makes these structures interesting for sensing, electrical and optical applications.

High-power LED package requirements

NASA Astrophysics Data System (ADS)

Wall, Frank; Martin, Paul S.; Harbers, Gerard

2004-01-01

Power LEDs have evolved from simple indicators into illumination devices. For general lighting applications, where the objective is to light up an area, white LED arrays have been utilized to serve that function. Cost constraints will soon drive the industry to provide a discrete lighting solution. Early on, that will mean increasing the power densities while quantum efficiencies are addressed. For applications such as automotive headlamps & projection, where light needs to be tightly collimated, or controlled, arrays of die or LEDs will not be able to satisfy the requirements & limitations defined by etendue. Ultimately, whether a luminaire requires a small source with high luminance, or light spread over a general area, economics will force the evolution of the illumination LED into a compact discrete high power package. How the customer interfaces with this new package should be an important element considered early on in the design cycle. If an LED footprint of adequate size is not provided, it may prove impossible for the customer, or end user, to get rid of the heat in a manner sufficient to prevent premature LED light output degradation. Therefore it is critical, for maintaining expected LED lifetime & light output, that thermal performance parameters be defined, by design, at the system level, which includes heat sinking methods & interface materials or methdology.

High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111)

NASA Astrophysics Data System (ADS)

Li, Zengcheng; Liu, Legong; Huang, Yingnan; Sun, Qian; Feng, Meixin; Zhou, Yu; Zhao, Hanmin; Yang, Hui

2017-07-01

High-power AlGaN-based 385 nm near-ultraviolet light-emitting diodes (UVA-LEDs) grown on Si(111) substrates are reported. The threading dislocation (TD) density of AlGaN was reduced by employing an Al-composition step-graded AlN/AlGaN multilayer buffer. V-shaped pits were intentionally incorporated into the active region to screen the carriers from the nonradiative recombination centers (NRCs) around the TDs and to facilitate hole injection. The light extraction efficiency was enhanced by the surface roughening of a thin-film (TF) vertical chip structure. The as-fabricated TF-UVA-LED exhibited a light output power of 960 mW at 500 mA, corresponding to an external quantum efficiency of 59.7%.

Red Luminescent Eu(III) Coordination Bricks Excited on Blue LED Chip.

PubMed

Koizuka, Toru; Yanagisawa, Kei; Hirai, Yuichi; Kitagawa, Yuichi; Nakanishi, Takayuki; Fushimi, Koji; Hasegawa, Yasuchika

2018-06-18

Three types of red luminescent Eu(III) complexes with Schiff base and hfa ligands (hfa: hexafluoroacetylacetonate), mononuclear [Eu(hfa) 2 (OAc)(salen) 2 ] (OAc: acetate anion, salen: N,N'-bis(salicylidene)ethylenediamine), brick-type [Eu 2 (hfa) 4 (OAc) 2 (salbn) 2 ] (salbn: N,N'-bis(salicylidene)-1,4-butanediamine), and polynuclear [Eu(hfa) 2 (OAc)(salhen)] n (salhen: N,N'-bis(salicylidene)-1,6-hexanediamine) are reported for white light-emitting diode (LED) devices. Among these complexes, brick-type [Eu 2 (hfa) 4 (OAc) 2 (salbn) 2 ] excited by blue light (460 nm) exhibits the photosensitized quantum yield (Φ π-π* = 47%) and remarkably high efficiency of sensitization (η sens = 96%). The efficiency of sensitization is caused by the excited state based on ligand-ligand interaction between the Schiff base and hfa ligands in Eu(III) complexes. To fabricate LED devices, the red luminescent [Eu 2 (hfa) 4 (OAc) 2 (salbn) 2 ] was mounted on an InGaN blue LED chip.

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

DOE Office of Scientific and Technical Information (OSTI.GOV)

Calciati, Marco; Vallone, Marco; Zhou, Xiangyu

2014-06-15

Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of current- and temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs). First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional) classes of models are addressed,more » like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i) the approximations in the transport description through the multi-quantum-well active region, (ii) the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii) the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10{sup −30} cm{sup 6}/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This preliminary attempt at uncertainty quantification confirms, beyond the present case, the need for an improved description of carrier transport and microscopic radiative and nonradiative recombination mechanisms in device-level LED numerical models.« less

Mixed-Halide Perovskites with Stabilized Bandgaps.

PubMed

Xiao, Zhengguo; Zhao, Lianfeng; Tran, Nhu L; Lin, Yunhui Lisa; Silver, Scott H; Kerner, Ross A; Yao, Nan; Kahn, Antoine; Scholes, Gregory D; Rand, Barry P

2017-11-08

One merit of organic-inorganic hybrid perovskites is their tunable bandgap by adjusting the halide stoichiometry, an aspect critical to their application in tandem solar cells, wavelength-tunable light emitting diodes (LEDs), and lasers. However, the phase separation of mixed-halide perovskites caused by light or applied bias results in undesirable recombination at iodide-rich domains, meaning open-circuit voltage (V OC ) pinning in solar cells and infrared emission in LEDs. Here, we report an approach to suppress halide redistribution by self-assembled long-chain organic ammonium capping layers at nanometer-sized grain surfaces. Using the stable mixed-halide perovskite films, we are able to fabricate efficient and wavelength-tunable perovskite LEDs from infrared to green with high external quantum efficiencies of up to 5%, as well as linearly tuned V OC from 1.05 to 1.45 V in solar cells.

The role of graphene formed on silver nanowire transparent conductive electrode in ultra-violet light emitting diodes

PubMed Central

Seo, Tae Hoon; Lee, Seula; Min, Kyung Hyun; Chandramohan, S.; Park, Ah Hyun; Lee, Gun Hee; Park, Min; Suh, Eun-Kyung; Kim, Myung Jong

2016-01-01

This paper reports a highly reliable transparent conductive electrode (TCE) that integrates silver nanowires (AgNWs) and high-quality graphene as a protecting layer. Graphene with minimized defects and large graphene domains has been successfully obtained through a facile two-step growth approach. Ultraviolet light emitting diodes (UV-LEDs) were fabricated with AgNWs or hybrid electrodes where AgNWs were combined with two-step grown graphene (A-2GE) or conventional one-step grown graphene (A-1GE). The device performance and reliability of the UV-LEDs with three different electrodes were compared. The A-2GE offered high figure of merit owing to the excellent UV transmittance and reduced sheet resistance. As a consequence, the UV-LEDs made with A-2GE demonstrated reduced forward voltage, enhanced electroluminescence (EL) intensity, and alleviated efficiency droop. The effects of joule heating and UV light illumination on the electrode stability were also studied. The present findings prove superior performance of the A-2GE under high current injection and continuous operation of UV LED, compared to other electrodes. From our observation, the A-2GE would be a reliable TCE for high power UV-LEDs. PMID:27387274

The role of graphene formed on silver nanowire transparent conductive electrode in ultra-violet light emitting diodes

NASA Astrophysics Data System (ADS)

Seo, Tae Hoon; Lee, Seula; Min, Kyung Hyun; Chandramohan, S.; Park, Ah Hyun; Lee, Gun Hee; Park, Min; Suh, Eun-Kyung; Kim, Myung Jong

2016-07-01

This paper reports a highly reliable transparent conductive electrode (TCE) that integrates silver nanowires (AgNWs) and high-quality graphene as a protecting layer. Graphene with minimized defects and large graphene domains has been successfully obtained through a facile two-step growth approach. Ultraviolet light emitting diodes (UV-LEDs) were fabricated with AgNWs or hybrid electrodes where AgNWs were combined with two-step grown graphene (A-2GE) or conventional one-step grown graphene (A-1GE). The device performance and reliability of the UV-LEDs with three different electrodes were compared. The A-2GE offered high figure of merit owing to the excellent UV transmittance and reduced sheet resistance. As a consequence, the UV-LEDs made with A-2GE demonstrated reduced forward voltage, enhanced electroluminescence (EL) intensity, and alleviated efficiency droop. The effects of joule heating and UV light illumination on the electrode stability were also studied. The present findings prove superior performance of the A-2GE under high current injection and continuous operation of UV LED, compared to other electrodes. From our observation, the A-2GE would be a reliable TCE for high power UV-LEDs.

Tunnel junction enhanced nanowire ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarwar, A. T. M. Golam; May, Brelon J.; Deitz, Julia I.

Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ∼6 V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The combination of both reduced bias voltage and increased hole injection increases the wall plug efficiency in these devices. More than 100 μW of UV emission at ∼310 nm is measured with external quantum efficiency in the range of 4–6 m%. The realization of tunnel junctionmore » within the nanowire LEDs opens a pathway towards the monolithic integration of cascaded multi-junction nanowire LEDs on silicon.« less

GaN-based LEDs with a high light extraction composite surface structure fabricated by a modified YAG laser lift-off technology and the patterned sapphire substrates

NASA Astrophysics Data System (ADS)

Sun, Yongjian; Trieu, Simeon; Yu, Tongjun; Chen, Zhizhong; Qi, Shengli; Tian, Pengfei; Deng, Junjing; Jin, Xiaoming; Zhang, Guoyi

2011-08-01

Vertical structure LEDs have been fabricated with a novel light extraction composite surface structure composed of a micron grating and nano-structure. The composite surface structure was generated by using a modified YAG laser lift-off technique, separating the wafers from cone-shaped patterned sapphire substrates. LEDs thus fabricated showed the light output power increase about 1.7-2.5 times when compared with conventional vertical structure LEDs grown on plane sapphire substrates. A three-dimensional finite difference time domain method was used to simulate this new kind of LED device. It was determined that nano-structures in composite surface patterns play a key role in the improvement of light extraction efficiency of LEDs.

229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

NASA Astrophysics Data System (ADS)

Liu, Dong; Cho, Sang June; Park, Jeongpil; Seo, Jung-Hun; Dalmau, Rafael; Zhao, Deyin; Kim, Kwangeun; Gong, Jiarui; Kim, Munho; Lee, In-Kyu; Albrecht, John D.; Zhou, Weidong; Moody, Baxter; Ma, Zhenqiang

2018-02-01

AlGaN based 229 nm light emitting diodes (LEDs), employing p-type Si to significantly increase hole injection, were fabricated on single crystal bulk aluminum nitride (AlN) substrates. Nitride heterostructures were epitaxially deposited by organometallic vapor phase epitaxy and inherit the low dislocation density of the native substrate. Following epitaxy, a p-Si layer is bonded to the heterostructure. LEDs were characterized both electrically and optically. Owing to the low defect density films, large concentration of holes from p-Si, and efficient hole injection, no efficiency droop was observed up to a current density of 76 A/cm2 under continuous wave operation and without external thermal management. An optical output power of 160 μW was obtained with the corresponding external quantum efficiency of 0.03%. This study demonstrates that by adopting p-type Si nanomembrane contacts as a hole injector, practical levels of hole injection can be realized in UV light-emitting diodes with very high Al composition AlGaN quantum wells, enabling emission wavelengths and power levels that were previously inaccessible using traditional p-i-n structures with poor hole injection efficiency.

Current crowding and self-heating effects in AlGaN-based flip-chip deep-ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Hao, Guo-Dong; Taniguchi, Manabu; Tamari, Naoki; Inoue, Shin-ichiro

2018-01-01

We thoroughly explored the physical origin of the efficiency decrease with increasing injection current and current crowding effect in 280 nm AlGaN-based flip-chip deep-ultraviolet (DUV) light-emitting diodes (LEDs). The current spreading length was experimentally determined to be much smaller in DUV LEDs than that in conventional InGaN-based visible LEDs. The severe self-heating caused by the low power conversion efficiency of DUV LEDs should be mainly responsible for the considerable decrease of efficiency when current crowding is present. The wall-plug efficiency of the DUV LEDs was markedly enhanced by using a well-designed p-electrode pattern to improve the current distribution.

Structural Investigation of Cesium Lead Halide Perovskites for High-Efficiency Quantum Dot Light-Emitting Diodes.

PubMed

Le, Quyet Van; Kim, Jong Beom; Kim, Soo Young; Lee, Byeongdu; Lee, Dong Ryeol

2017-09-07

We have investigated the effect of reaction temperature of hot-injection method on the structural properties of CsPbX 3 (X: Br, I, Cl) perovskite nanocrystals (NCs) using small- and wide-angle X-ray scattering. It is confirmed that the size of the NCs decreased as the reaction temperature decreased, resulting in stronger quantum confinement. The cubic-phase perovskite NCs formed despite the fact that the reaction temperatures increased from 140 to 180 °C; however, monodispersive NC cubes that are required for densely packing self-assembly film were formed only at lower temperatures. From the X-ray scattering measurements, the spin-coated film from more monodispersive perovskite nanocubes synthesized at lower temperatures resulted in more preferred orientation. This dense-packing perovskite film with preferred orientation yielded efficient light-emitting diode (LED) performance. Thus the dense-packing structure of NC assemblies formed after spin-coating should be considered for high-efficient LEDs based on perovskite quantum dots in addition to quantum confinement effect of the quantum dots.

Evaluating the impact of LED bulb development on the economic viability of ultraviolet technology for disinfection.

PubMed

Ibrahim, Mohamed A S; MacAdam, Jitka; Autin, Olivier; Jefferson, Bruce

2014-01-01

Ultraviolet (UV) technologies have been very successful in disinfection applications due to their ability to inactivate microorganisms without producing harmful disinfection by-products. However, there have been a number of concerns associated with the use of conventional UV systems such as hazardous mercury content, high capital investment and reduced electrical efficiency. These concerns have set limitations for the use of UV processes. The study evaluates the development of light emitting diode (LED) technology as an alternative UV source over the last 5 years, analyses the projections provided by the researchers and UV LED manufacturers and presents the information in a cost model with the aim to predict the timeline at which UV LED will compete with traditional UV low pressure high output technology in the commercial market at full-scale residential and industrial disinfection applications.

Reduced junction temperature and enhanced performance of high power light-emitting diodes using reduced graphene oxide pattern

NASA Astrophysics Data System (ADS)

Han, Nam; Jung, Eunjin; Han, Min; Deul Ryu, Beo; Bok Ko, Kang; Park, Young Jae; Cuong, TranViet; Cho, Jaehee; Kim, Hyunsoo; Hong, Chang-Hee

2015-07-01

Thermal management has become a crucial area for further development of high-power light-emitting didoes (LEDs) due to the high operating current densities that are required and result in additional joule heating. This increased joule heating negatively affects the performance of the LEDs since it greatly decreases both the optical performance and the lifetime. To circumvent this problem, a reduced graphene oxide (rGO) layer can be inserted to act as a heat spreader. In this study, current-voltage and light-output-current measurements are systematically performed at different temperatures from 30 to 190 °C to investigate the effect that the embedded rGO pattern has on the device performance. At a high temperature and high operating current, the junction temperature (Tj) is 23% lower and the external quantum efficiency (EQE) is 24% higher for the rGO embedded LEDs relative to those of conventional LEDs. In addition, the thermal activation energy of the rGO embedded LEDs exhibits a 30% enhancement as a function of the temperature at a bias of  -5 V. This indicates that the rGO pattern plays an essential role in decreasing the junction temperature and results in a favorable performance in terms of the temperature of the high power GaN-based LED junction.

A single-phase Ba{sub 9}Lu{sub 2}Si{sub 6}O{sub 24}:Eu{sup 2+}, Ce{sup 3+}, Mn{sup 2+} phosphor with tunable full-color emission for NUV-based white LED applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Changhua; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201; Liu, Yongfu, E-mail: liuyongfu@nimte.ac.cn

Highlights: • A single phase Ba{sub 9}Lu{sub 2}Si{sub 6}O{sub 24}:Eu{sup 2+}, Ce{sup 3+}, Mn{sup 2+} phosphor with full-color emission was obtained by solid-state reactions. • Eu{sup 2+}, Ce{sup 3+}, and Mn{sup 2+} acts as blue, green, and red luminescence centers, respectively. • The BLS:Eu{sup 2+}, Ce{sup 3+}, Mn{sup 2+} phosphor shows a high quantum efficient of ∼62% and a good color stability. • Combining this single phosphor with a 395 nm NUV-chip, an ideal white LED with a high CRI of 85 and a CCT of 6300 K was obtained. - Abstract: We obtained a single phase BLS:Eu{sup 2+}, Ce{supmore » 3+}, Mn{sup 2+} phosphor by solid-state reactions. Eu{sup 2+}, Ce{sup 3+}, and Mn{sup 2+} gives rise to the blue, green, and red emission, respectively. The Mn{sup 2+} red emission can be effectively enhanced via energy transfers from both Eu{sup 2+} and Ce{sup 3+}. Thus a tunable full color emission from 410 to 750 nm was realized in this single phosphor. The Eu{sup 2+} → Mn{sup 2+} energy transfer mechanism was investigated by the fluorescence decay curves. This single phosphor exhibits an efficient excitation band covering from 390 to 410 nm, which matches well with the emission light of the efficient NUV chips. The optimized BLS:Eu{sup 2+}, Ce{sup 3+}, Mn{sup 2+} phosphor shows a high quantum efficient of ∼62% and a good color stability. When this single phosphor was combined with a 395 nm NUV-chip, an ideal white LED with a high color render index (CRI) of 85 and a correlated color temperature (CCT) of 6300 K was obtained. This demonstrates the promising application of the BLS:Eu{sup 2+}, Ce{sup 3+}, Mn{sup 2+} single phosphor for the NUV-based white LEDs.« less

An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: preferential outcoupling of strong in-plane emission (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kim, Jong Kyu; Lee, Jong Won; Kim, Dong-Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Kim, Yong-Il

2016-09-01

AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) are being developed for their numerous applications such as purification of air and water, sterilization in food processing, UV curing, medical-, and defense-related light sources. However, external quantum efficiency (EQE) of AlGaN-based DUV LEDs is very poor (<5% for 250nm) particularly due to low hole concentration and light extraction efficiency (LEE). Conventional LEE-enhancing techniques used for GaInN-based visible LEDs turned out to be ineffective for DUV LEDs due to difference in intrinsic material property between GaInN and AlGaN (Al< 30%). Unlike GaInN visible LEDs, DUV light from a high Al-content AlGaN active region is strongly transverse-magnetic (TM) polarized, that is, the electric field vector is parallel to the (0001) c-axis and shows strong sidewall emission through m- or a-plane due to crystal-field split-off hole band being top most valence band. Therefore, a new LEE-enhancing approach addressing the unique intrinsic property of AlGaN DUV LEDs is strongly desired. In this study, an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells is presented. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage simultaneously. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes to maximize the power conversion efficiency.

Reshaping Light-Emitting Diodes To Increase External Efficiency

NASA Technical Reports Server (NTRS)

Rogowski, Robert; Egalon, Claudio

1995-01-01

Light-emitting diodes (LEDs) reshaped, according to proposal, increasing amount of light emitted by decreasing fraction of light trapped via total internal reflection. Results in greater luminous output power for same electrical input power; greater external efficiency. Furthermore, light emitted by reshaped LEDs more nearly collimated (less diffuse). Concept potentially advantageous for conventional red-emitting LEDs. More advantageous for new "blue" LEDs, because luminous outputs and efficiencies of these devices very low. Another advantage, proposed conical shapes achieved relatively easily by chemical etching of semiconductor surfaces.

Applications of Light Emitting Diodes in Health Care.

PubMed

Dong, Jianfei; Xiong, Daxi

2017-11-01

Light emitting diodes (LEDs) have become the main light sources for general lighting, due to their high lumen efficiency and long life time. Moreover, their high bandwidth and the availability of diverse wavelength contents ranging from ultraviolet to infrared empower them with great controllability in tuning brightness, pulse durations and spectra. These parameters are the essential ingredients of the applications in medical imaging and therapies. Despite the fast advances in both LED technologies and their applications, few reviews have been seen to link the controllable emission properties of LEDs to these applications. The objective of this paper is to bridge this gap by reviewing the main control techniques of LEDs that enable creating enhanced lighting patterns for imaging and generating effective photon doses for photobiomodulation. This paper also provides the basic mechanisms behind the effective LED therapies in treating cutaneous and neurological diseases. The emerging field of optogenetics is also discussed with a focus on the application of LEDs. The multidisciplinary topics reviewed in this paper can help the researchers in LEDs, imaging, light therapy and optogenetics better understand the basic principles in each other's field; and hence to stimulate the application of LEDs in health care.

Impact of Alloy Fluctuations on Radiative and Auger Recombination in InGaN Quantum Wells

NASA Astrophysics Data System (ADS)

Jones, Christina; Teng, Chu-Hsiang; Yan, Qimin; Ku, Pei-Cheng; Kioupakis, Emmanouil

Light-emitting diodes (LEDs) based on indium gallium nitride (InGaN) are important for efficient solid-state lighting (2014 Nobel Prize in Physics). Despite its many successes, InGaN suffers from issues that reduce the efficiency of devices at high power, such as the green gap and efficiency droop. The origin of the droop has been attributed to Auger recombination, mediated by carrier scattering due to phonons and alloy disorder. Additionally, InGaN exhibits atomic-scale composition fluctuations that localize carriers and may affect the efficiency. In this work, we study the effect of local composition fluctuations on the radiative recombination rate, Auger recombination rate, and efficiency of InGaN/GaN quantum wells. We apply k.p calculations to simulate band edges and wave functions of quantum wells with fluctuating alloy distributions based on atom probe tomography data, and we evaluate double and triple overlaps of electron and hole wave functions. We compare results for quantum wells with fluctuating alloy distributions to those with uniform alloy compositions and to published work. Our results demonstrate that alloy-composition fluctuations aggravate the efficiency-droop and green-gap problems and further reduce LED efficiency at high power. We acknowledge the NSF CAREER award DMR-1254314, the NSF Graduate Research Fellowship Program DGE-1256260, and the DOE NERSC facility (DE-AC02-05CH11231).

Affordable underwater wireless optical communication using LEDs

NASA Astrophysics Data System (ADS)

Pilipenko, Vladimir; Arnon, Shlomi

2013-09-01

In recent years the need for high data rate underwater wireless communication (WC) has increased. Nowadays, the conventional technology for underwater communication is acoustic. However, the maximum data rate that acoustic technology can provide is a few kilobits per second. On the other hand, emerging applications such as underwater imaging, networks of sensors and swarms of underwater vehicles require much faster data rates. As a result, underwater optical WC, which can provide much higher data rates, has been proposed as an alternative means of communication. In addition to high data rates, affordable communication systems become an important feature in the development requirements. The outcome of these requirements is a new system design based on off-the-shelf components such as blue and green light emitting diodes (LEDs). This is due to the fact that LEDs offer solutions characterized by low cost, high efficiency, reliability and compactness. However, there are some challenges to be met when incorporating LEDs as part of the optical transmitter, such as low modulation rates and non linearity. In this paper, we review the main challenges facing the incorporation of LEDs as an integral part of underwater WC systems and propose some techniques to mitigate the LED limitations in order to achieve high data rate communication

High-power LEDs based on InGaAsP/InP heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rakovics, V.; Imenkov, A. N.; Sherstnev, V. V.

2014-12-15

High-power light-emitting diodes (LEDs) with mesa diameters of 100, 200, and 300 μm are developed on the basis of InGaAsP/InP heterostructures. The mesas are close in shape to a truncated cone with a generatrix inclination angle of ∼45° in the vicinity of the active region of the LED, with a ring etched around the mesa serving as a reflector. The emission spectra and directivity patterns of these LEDs are studied in a wide range of current densities and it is shown that radiative recombination is dominant to a current density of ∼5000 A/cm{sup 2}, which makes these structures promising formore » the development of high-power LEDs. An emission power of ∼14 mW is obtained in the continuous-wave mode (I = 0.2 A, λ = 1.1 μm), and that of 77 mW, in the pulsed mode (I = 2 A, λ = 1.1 μm), which corresponds to external quantum efficiencies of 6.2 and 3.4%, respectively.« less

Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes.

PubMed

Zhao, Peng; Zhao, Hongping

2012-09-10

The enhancement of light extraction efficiency for thin-film flip-chip (TFFC) InGaN quantum wells (QWs) light-emitting diodes (LEDs) with GaN micro-domes on n-GaN layer was studied. The light extraction efficiency of TFFC InGaN QWs LEDs with GaN micro-domes were calculated and compared to that of the conventional TFFC InGaN QWs LEDs with flat surface. The three dimensional finite difference time domain (3D-FDTD) method was used to calculate the light extraction efficiency for the InGaN QWs LEDs emitting at 460nm and 550 nm, respectively. The effects of the GaN micro-dome feature size and the p-GaN layer thickness on the light extraction efficiency were studied systematically. Studies indicate that the p-GaN layer thickness is critical for optimizing the TFFC LED light extraction efficiency. Significant enhancement of the light extraction efficiency (2.5-2.7 times for λ(peak) = 460nm and 2.7-2.8 times for λ(peak) = 550nm) is achievable from TFFC InGaN QWs LEDs with optimized GaN micro-dome diameter and height.

Organic Fluorescent Dyes Supported on Activated Boron Nitride: A Promising Blue Light Excited Phosphors for High-Performance White Light-Emitting Diodes

PubMed Central

Li, Jie; Lin, Jing; Huang, Yang; Xu, Xuewen; Liu, Zhenya; Xue, Yanming; Ding, Xiaoxia; Luo, Han; Jin, Peng; Zhang, Jun; Zou, Jin; Tang, Chengchun

2015-01-01

We report an effective and rare-earth free light conversion material synthesized via a facile fabrication route, in which organic fluorescent dyes, i.e. Rhodamine B (RhB) and fluorescein isothiocyanate (FITC) are embedded into activated boron nitride (αBN) to form a composite phosphor. The composite phosphor shows highly efficient Förster resonance energy transfer and greatly improved thermal stability, and can emit at broad visible wavelengths of 500–650 nm under the 466 nm blue-light excitation. By packaging of the composite phosphors and a blue light-emitting diode (LED) chip with transparent epoxy resin, white LED with excellent thermal conductivity, current stability and optical performance can be realized, i.e. a thermal conductivity of 0.36 W/mk, a Commission Internationale de 1'Eclairage color coordinates of (0.32, 0.34), and a luminous efficiency of 21.6 lm·W−1. Our research opens the door toward to the practical long-life organic fluorescent dyes-based white LEDs. PMID:25682730

Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

NASA Astrophysics Data System (ADS)

Vinattieri, A.; Batignani, F.; Bogani, F.; Meneghini, M.; Meneghesso, G.; Zanoni, E.; Zhu, D.; Humphreys, C. J.

2014-02-01

By means of time integrated (TI), time-resolved (TR) photoluminescence (PL) and PL excitation spectra, we investigate the role of an high temperature post-growth thermal annealing (TA) on a set of InGaN/GaN LED structures with different dislocation densities. We provide evidence of the nature of the radiative recombination from a wide distribution of non-interacting localised states and we show the beneficial effect of thermal annealing in reducing the contribution of non-radiative recombination in the well region.

Traceability validation of a high speed short-pulse testing method used in LED production

NASA Astrophysics Data System (ADS)

Revtova, Elena; Vuelban, Edgar Moreno; Zhao, Dongsheng; Brenkman, Jacques; Ulden, Henk

2017-12-01

Industrial processes of LED (light-emitting diode) production include LED light output performance testing. Most of them are monitored and controlled by optically, electrically and thermally measuring LEDs by high speed short-pulse measurement methods. However, these are not standardized and a lot of information is proprietary that it is impossible for third parties, such as NMIs, to trace and validate. It is known, that these techniques have traceability issue and metrological inadequacies. Often due to these, the claimed performance specifications of LEDs are overstated, which consequently results to manufacturers experiencing customers' dissatisfaction and a large percentage of failures in daily use of LEDs. In this research a traceable setup is developed to validate one of the high speed testing techniques, investigate inadequacies and work out the traceability issues. A well-characterised short square pulse of 25 ms is applied to chip-on-board (CoB) LED modules to investigate the light output and colour content. We conclude that the short-pulse method is very efficient in case a well-defined electrical current pulse is applied and the stabilization time of the device is "a priori" accurately determined. No colour shift is observed. The largest contributors to the measurement uncertainty include badly-defined current pulse and inaccurate calibration factor.

Superior characteristics of microscale light emitting diodes through tightly lateral oxide-confined scheme

NASA Astrophysics Data System (ADS)

Huang, Shen-Che; Li, Heng; Zhang, Zhe-Han; Chen, Hsiang; Wang, Shing-Chung; Lu, Tien-Chang

2017-01-01

We report on the design of the geometry and chip size-controlled structures of microscale light-emitting diodes (micro-LEDs) with a shallow-etched oxide-refilled current aperture and their performance. The proposed structure, which combines an indium-tin-oxide layer and an oxide-confined aperture, exhibited not only uniform current distribution but also remarkably tight current confinement. An extremely high injection level of more than 90 kA/cm2 was achieved in the micro-LED with a 5-μm aperture. Current spreading and the droop mechanism in the investigated devices were characterized through electroluminescence measurements, optical microscopy, and beam-view imaging. Furthermore, we utilized the β-model and S-model to elucidate current crowding and the efficiency droop phenomenon in the investigated micro-LEDs. The luminescence results evidenced the highly favorable performance of the fabricated micro-LEDs, which is a result of their more uniform current spreading and lower junction temperature relative to conventional LEDs. Moreover, the maximum endured current density could be further increased by reducing the aperture size of the micro-LEDs. The proposed design, which is expected to be beneficial for the development of high-performance array-based micro-LEDs, is practicable through current state-of-the-art processing techniques.

EDITORIAL: LED light sources (light for the future) LED light sources (light for the future)

NASA Astrophysics Data System (ADS)

Grandjean, N.

2010-09-01

Generating white light from electricity with maximum efficacy has been a long quest since the first incandescent lamp was invented by Edison at the end of the 19th century. Nowadays, semiconductors are making reality the holy grail of converting electrons into photons with 100% efficiency and with colours that can be mixed for white light illumination. The revolution in solid-state lighting (SSL) dates to 1994 when Nakamura reported the first high-brightness blue LED based on GaN semiconductors. Then, white light was produced by simply combining a blue dye with a yellow phosphor. After more than a decade of intensive research the performance of white LEDs is quite impressive, beating by far the luminous efficacy of compact fluorescent lamps. We are likely close to replacing our current lighting devices by SSL lamps. However, there are still technological and fabrication cost issues that could delay large market penetration of white LEDs. Interestingly, SSL may create novel ways of using light that could potentially limit electricity saving. Whatever the impact of SSL, it will be significant on our daily life. The purpose of this special cluster issue is to produce a snapshot of the current situation of SSL from different viewing angles. In an introductory paper, Tsao and co-workers from Sandia National Laboratories, present an energy-economics perspective of SSL considering societal changes and SSL technology evolution. In a second article, Narukawa et al working at Nichia Corporation—the pioneer and still the leading company in SSL—describe the state of the art of current research products. They demonstrate record performance with white LEDs exhibiting luminous efficacy of 183 lm W-1 at high-current injection. Then, a series of topical papers discuss in detail various aspects of the physics and technology of white LEDs Carrier localization in InGaN quantum wells has been considered the key to white LEDs' success despite the huge density of defects. A comprehensive review of the different localization mechanisms and their implication for internal quantum efficiency (IQE) is proposed by Oliver and co-workers from Cambridge University. When discussing IQE in InGaN-based LEDs, the efficiency droop at high-current injection always emerges, which is a major concern for the future of SSL technology. Here, a collaborative work between Samsung and the Gwangju Institute of Science and Technology (Korea) proves that a specific design of the active region can limit this detrimental effect. Once the issue of the IQE is solved, one still has to let the photons out of the chip. Matioli and Weisbuch from the University of California at Santa Barbara introduce the use of photonic crystals (PhCs) to improve light extraction efficiency. They describe different approaches to overcoming the main limitation of LEDs when implementing surface PhCs. The technology of SSL, and in particular of colour rendering, is tackled by Zukauskas et al who studied in detail different white light sources. They show that extreme colour-fidelity indices need to cover the entire spectrum, with a broad-band at 530-610 nm and a component beyond 610 nm. Then, the reliability of GaN-based LEDs is discussed in the paper of Meneghesso and co-workers. The authors consider the most important physical mechanisms that are (i) the degradation of the active layer of LEDs, (ii) the degradation of the package/phosphor system, (iii) the failure of GaN-based LEDs against electrostatic discharge. Finally, GaN LEDs on silicon developed in the group of Egawa at the Nagoya Institute of Technology are presented. This technology could allow a significant decrease in the fabrication cost of white LEDs.

Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes.

PubMed

Kuo, Tsung-Rong; Hung, Shih-Ting; Lin, Yen-Ting; Chou, Tzu-Lin; Kuo, Ming-Cheng; Kuo, Ya-Pei; Chen, Chia-Chun

2017-09-19

Quantum dot light-emitting diodes (QD-LEDs) have been considered as potential display technologies with the characterizations of high color purity, flexibility, transparency, and cost efficiency. For the practical applications, the development of heavy-metal-free QD-LEDs from environment-friendly materials is the most important issue to reduce the impacts on human health and environmental pollution. In this work, heavy-metal-free InP/ZnS core/shell QDs with different fluorescence were prepared by green synthesis method with low cost, safe, and environment-friendly precursors. The InP/ZnS core/shell QDs with maximum fluorescence peak at ~ 530 nm, superior fluorescence quantum yield of 60.1%, and full width at half maximum of 55 nm were applied as an emission layer to fabricate multilayered QD-LEDs. The multilayered InP/ZnS core/shell QD-LEDs showed the turn-on voltage at ~ 5 V, the highest luminance (160 cd/m 2 ) at 12 V, and the external quantum efficiency of 0.223% at 6.7 V. Overall, the multilayered InP/ZnS core/shell QD-LEDs reveal potential to be the heavy-metal-free QD-LEDs for future display applications.

Processing and characterization of high resolution GaN/InGaN LED arrays at 10 micron pitch for micro display applications

NASA Astrophysics Data System (ADS)

Dupré, Ludovic; Marra, Marjorie; Verney, Valentin; Aventurier, Bernard; Henry, Franck; Olivier, François; Tirano, Sauveur; Daami, Anis; Templier, François

2017-02-01

We report the fabrication process and characterization of high resolution 873 x 500 pixels emissive arrays based on blue or green GaN/InGaN light emitting diodes (LEDs) at a reduced pixel pitch of 10 μm. A self-aligned process along with a combination of damascene metallization steps is presented as the key to create a common cathode which is expected to provide good thermal dissipation and prevent voltage drops between center and side of the micro LED matrix. We will discuss the challenges of a self-aligned technology related to the choice of a good P contact metal and will present our solutions for the realization of the metallic interconnections between the GaN contacts and the higher levels of metallization at such a small pixel pitch. Enhanced control of each technological step allows scalability of the process up to 4 inch LED wafers and production of high quality LED arrays. The very high brightness (up to 107 cd.m-2) and good external quantum efficiency (EQE) of the resulting device make these kind of micro displays suitable for augmented reality or head up display applications.

Studies on Single-phase and Multi-phase Heat Pipe for LED Panel for Efficient Heat Dissipation

NASA Astrophysics Data System (ADS)

Vyshnave, K. C.; Rohit, G.; Maithreya, D. V. N. S.; Rakesh, S. G.

2017-08-01

The popularity of LED panel as a source of illumination has soared recently due to its high efficiency. However, the removal of heat that is produced in the chip is still a major challenge in its design since this has an adverse effect on its reliability. If high junction temperature develops, the colour of the emitted light may diminish over prolonged usage or even a colour shift may occur. In this paper, a solution has been developed to address this problem by using a combination of heat pipe and heat fin technology. A single-phase and a two-phase heat pipes have been designed theoretically and computational simulations carried out using ANSYS FLUENT. The results of the theoretical calculations and those obtained from the simulations are found to be in agreement with each other.

Efficient Transplantation via Antibody-based Clearance of Hematopoietic Stem Cell Niches

PubMed Central

Czechowicz, Agnieszka; Kraft, Daniel; Weissman, Irving L.; Bhattacharya, Deepta

2008-01-01

Summary We demonstrate that administration of a depleting antibody specific for c-kit leads to the highly efficient removal of host hematopoietic stem cells (HSCs) and high levels of donor HSC chimerism following transplantation. Upon intravenous transplantation, hematopoietic stem cells (HSCs) can home to specialized niches, yet most HSCs fail to engraft unless recipients are subjected to toxic preconditioning. Here, we provide evidence that, aside from immune barriers, donor HSC engraftment is restricted by occupancy of appropriate niches by host HSCs. Administration of ACK2, an antibody that blocks c-kit function, led to the transient removal of >98% of endogenous HSCs in immunodeficient mice. Subsequent transplantation of these animals with donor HSCs led to chimerism levels of up to 90%. Extrapolation of these methods to humans may enable mild but effective conditioning regimens for transplantation. PMID:18033883

The initiating radical yields and the efficiency of polymerization for various dental photoinitiators excited by different light curing units.

PubMed

Neumann, Miguel G; Schmitt, Carla C; Ferreira, Giovana C; Corrêa, Ivo C

2006-06-01

To evaluate the efficiency of the photopolymerization of dental resins it is necessary to know to what extent the light emitted by the light curing units is absorbed by the photoinitiators. On the other hand, the efficiency of the absorbed photons to produce species that launch the polymerization process is also of paramount importance. Therefore, the previously determined PAE (photon absorption efficiency) is used in conjunction with the polymerization quantum yields for the photoinitiators, in order to be able to compare the total process on an equivalent basis. This parameter can be used to identify the best performance for the photochemical process with specific photoinitiators. The efficiency of LED (Ultrablue IS) and QTH (Optilux 401) lamps were tested comparing their performances with the photoinitiators camphorquinone (CQ); phenylpropanedione (PPD); monoacylphosphine oxide (Lucirin TPO); and bisacylphosphine oxide (Irgacure 819). The extent of photopolymerization per absorbed photon was determined from the polymerization quantum yields obtained by using the photoinitiators to polymerize methyl methacrylate, and afterwards combined with the previously determined PAEs. Although CQ presents a rather low polymerization quantum yield, its photopolymerization efficiency is practically the highest when irradiated with the Ultrablue LED. On the other hand, Lucirin is much more efficient than the other photoinitiators when irradiated with a QTH lamp, due to its high quantum yield and the overlap between its absorption spectrum and the output of the visible lamp light. Difference in photopolymerization efficiencies arise when combinations of photoinitiators are used, and when LED sources are used in preference to QTH. Mechanistic understanding is essential to optimal initiator formulation.

Spatial layout optimization design of multi-type LEDs lighting source based on photoelectrothermal coupling theory

NASA Astrophysics Data System (ADS)

Xue, Lingyun; Li, Guang; Chen, Qingguang; Rao, Huanle; Xu, Ping

2018-03-01

Multiple LED-based spectral synthesis technology has been widely used in the fields of solar simulator, color mixing, and artificial lighting of plant factory and so on. Generally, amounts of LEDs are spatially arranged with compact layout to obtain the high power density output. Mutual thermal spreading among LEDs will produce the coupled thermal effect which will additionally increase the junction temperature of LED. Affected by the Photoelectric thermal coupling effect of LED, the spectrum of LED will shift and luminous efficiency will decrease. Correspondingly, the spectral synthesis result will mismatch. Therefore, thermal management of LED spatial layout plays an important role for multi-LEDs light source system. In the paper, the thermal dissipation network topology model considering the mutual thermal spreading effect among the LEDs is proposed for multi-LEDs system with various types of power. The junction temperature increment cased by the thermal coupling has the great relation with the spatial arrangement. To minimize the thermal coupling effect, an optimized method of LED spatial layout for the specific light source structure is presented and analyzed. The results showed that layout of LED with high-power are arranged in the corner and low-power in the center. Finally, according to this method, it is convenient to determine the spatial layout of LEDs in a system having any kind of light source structure, and has the advantages of being universally applicable to facilitate adjustment.

Optical design of a light-emitting diode lamp for a maritime lighthouse.

PubMed

Jafrancesco, D; Mercatelli, L; Sansoni, P; Fontani, D; Sani, E; Coraggia, S; Meucci, M; Francini, F

2015-04-10

Traffic signaling is an emerging field for light-emitting diode (LED) applications. This sustainable power-saving illumination technology can be used in maritime signaling thanks to the recently updated norms, where the possibility to utilize LED sources is explicitly cited, and to the availability of high-power white LEDs that, combined with suitable lenses, permit us to obtain well-collimated beams. This paper describes the optical design of a LED-based lamp that can replace a traditional lamp in an authentic marine lighthouse. This source recombines multiple separated LEDs realizing a quasi-punctual localized source. Advantages can be lower energy consumption, higher efficiency, longer life, fewer faults, slower aging, and minor maintenance costs. The proposed LED source allows us to keep and to utilize the old Fresnel lenses of the lighthouse, which very often have historical value.

Use of coupled wavelength ultraviolet light-emitting diodes for inactivation of bacteria in subsea oil-field injection water.

PubMed

Qiao, Yang; Chen, Daoyi; Wen, Diya

2018-06-04

The development of subsea injection water disinfection systems will enable the novel exploration of offshore oilfields. Ultraviolet light emitting diodes (UV-LEDs) with peak wavelengths at 255 nm, 280 nm, 350 nm, and combinations of 255 nm and 350 nm, and 280 nm and 350 nm were investigated in this study to determine their efficiency at disinfecting saprophytic bacteria, iron bacteria, and sulfate reducing bacteria. Results show that UV-LEDs with peak wavelengths at 280 nm were the most practical in this domain because of their high performance in both energy-efficiency and reactivation suppression, although 255 nm UV-LEDs achieved an optimal germicidal effect in dose-based experiments. The use of combined 280 nm and 350 nm wavelengths also induced synergistic bactericidal effects on saprophytic bacteria. Copyright © 2018. Published by Elsevier B.V.

Fully porous GaN p-n junction diodes fabricated by chemical vapor deposition.

PubMed

Bilousov, Oleksandr V; Carvajal, Joan J; Geaney, Hugh; Zubialevich, Vitaly Z; Parbrook, Peter J; Martínez, Oscar; Jiménez, Juan; Díaz, Francesc; Aguiló, Magdalena; O'Dwyer, Colm

2014-10-22

Porous GaN based LEDs produced by corrosion etching techniques demonstrated enhanced light extraction efficiency in the past. However, these fabrication techniques require further postgrown processing steps, which increases the price of the final system. Also, the penetration depth of these etching techniques is limited, and affects not only the semiconductor but also the other elements constituting the LED when applied to the final device. In this paper, we present the fabrication of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction. We characterized their diode behavior from room temperature to 673 K and demonstrated their ability as current rectifiers, thus proving the potential of these fully porous p-n junctions for diode and LEDs applications. The electrical and luminescence characterization confirm that high electronic quality porous structures can be obtained by this method, and we believe this investigation can be extended to other III-N materials for the development of white light LEDs, or to reduce reflection losses and narrowing the output light cone for improved LED external quantum efficiencies.

An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination.

PubMed

Zhao, Chao; Ng, Tien Khee; Prabaswara, Aditya; Conroy, Michele; Jahangir, Shafat; Frost, Thomas; O'Connell, John; Holmes, Justin D; Parbrook, Peter J; Bhattacharya, Pallab; Ooi, Boon S

2015-10-28

We present a detailed study of the effects of dangling bond passivation and the comparison of different sulfide passivation processes on the properties of InGaN/GaN quantum-disk (Qdisk)-in-nanowire based light emitting diodes (NW-LEDs). Our results demonstrated the first organic sulfide passivation process for nitride nanowires (NWs). The results from Raman spectroscopy, photoluminescence (PL) measurements, and X-ray photoelectron spectroscopy (XPS) showed that octadecylthiol (ODT) effectively passivated the surface states, and altered the surface dynamic charge, and thereby recovered the band-edge emission. The effectiveness of the process with passivation duration was also studied. Moreover, we also compared the electro-optical performance of NW-LEDs emitting at green wavelength before and after ODT passivation. We have shown that the Shockley-Read-Hall (SRH) non-radiative recombination of NW-LEDs can be greatly reduced after passivation by ODT, which led to a much faster increasing trend of quantum efficiency and higher peak efficiency. Our results highlighted the possibility of employing this technique to further design and produce high performance NW-LEDs and NW-lasers.

Highly-efficient, flexible piezoelectric PZT thin film nanogenerator on plastic substrates.

PubMed

Park, Kwi-Il; Son, Jung Hwan; Hwang, Geon-Tae; Jeong, Chang Kyu; Ryu, Jungho; Koo, Min; Choi, Insung; Lee, Seung Hyun; Byun, Myunghwan; Wang, Zhong Lin; Lee, Keon Jae

2014-04-23

A highly-efficient, flexible piezoelectric PZT thin film nanogenerator is demonstrated using a laser lift-off (LLO) process. The PZT thin film nanogenerator harvests the highest output performance of ∼200 V and ∼150 μA·cm(-2) from regular bending motions. Furthermore, power sources generated from a PZT thin film nanogenerator, driven by slight human finger bending motions, successfully operate over 100 LEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Light use efficiency for vegetables production in protected and indoor environments

NASA Astrophysics Data System (ADS)

Cocetta, Giacomo; Casciani, Daria; Bulgari, Roberta; Musante, Fulvio; Kołton, Anna; Rossi, Maurizio; Ferrante, Antonio

2017-01-01

In recent years, there is a growing interest for vegetables production in indoor or disadvantaged climatic zones by using greenhouses. The main problem of crop growing indoor or in environment with limited light availability is the correct choice of light source and the quality of lighting spectrum. In greenhouse and indoor cultivations, plant density is higher than in the open field and plants have to compete for light and nutrients. Nowadays, advanced systems for indoor horticulture use light emitting diodes (LED) for improving crop growth, enhancing the plant productivity and favouring the best nutritional quality formation. In closed environments, as indoor growing modules, the lighting system represents the only source of light and its features are fundamental for obtaining the best lighting performances for plant and the most efficient solution. LED lighting engines are more efficient compared to the lighting sources used traditionally in horticulture and allow light spectrum and intensity modulations to enhance the light use efficiency for plants. The lighting distribution and the digital controls are fundamental for tailoring the spectral distribution on each plant in specific moments of its growth and play an important role for optimizing growth and produce high-quality vegetables. LED lights can increase plant growth and yield, but also nutraceutical quality, since some light intensities increase pigments biosynthesis and enhance the antioxidants content of leaves or fruits: in this regards the selection of LED primary light sources in relation to the peaks of the absorbance curve of the plants is important.

Highly pure yellow light emission of perovskite CsPb(BrxI1-x)3 quantum dots and their application for yellow light-emitting diodes

NASA Astrophysics Data System (ADS)

He, Yuandan; Gong, Jinhui; Zhu, Yiyuan; Feng, Xingcan; Peng, Hong; Wang, Wei; He, Haiyang; Liu, Hu; Wang, Li

2018-06-01

High-quality all-inorganic perovskite CsPb(BrxI1-x)3 quantum dots (QDs) with quantum yield of 50% were systematically studied as yellow light convertor for light emitting diodes (LEDs). A novel heat insulation structure was designed for the QD-converted yellow LEDs. In this structure, a silicone layer was set on top of the GaN LED chip to prevent directly heating of the QDs by the LED chip. Then the CsPb(BrxI1-x)3 QDs were filled in the bowl-shaped silicone layer after ultrasonic dispersion treatment. Finally, an Al2O3 passivation layer was grown on the QDs layer by Atomic Layer Disposition at 40 °C. When x = 0.55, highly pure yellow LEDs with an emission peak at ∼570 nm and a full width at half maximum of 25 nm were achieved. The chromaticity coordinates of the QD-converted yellow LEDs (0.4920 ± 0.0017, 0.4988 ± 0.0053) showed almost no variation under driving current from 5 mA to 150 mA. During an operation period of 60 min, the emission wavelength of the yellow LEDs showed no distinct shift. Moreover, the luminous efficiency of the QD-converted yellow LEDs achieved 13.51 l m/W at 6 mA. These results demonstrated that CsPb(BrxI1-x)3 QDs and the heat insulation structure are promising candidate for high purity yellow LEDs.

Growth and development of Arabidopsis thaliana under single-wavelength red and blue laser light.

PubMed

Ooi, Amanda; Wong, Aloysius; Ng, Tien Khee; Marondedze, Claudius; Gehring, Christoph; Ooi, Boon S

2016-09-23

Indoor horticulture offers a sensible solution for sustainable food production and is becoming increasingly widespread. However, it incurs high energy and cost due to the use of artificial lighting such as high-pressure sodium lamps, fluorescent light or increasingly, the light-emitting diodes (LEDs). The energy efficiency and light quality of currently available horticultural lighting is suboptimal, and therefore less than ideal for sustainable and cost-effective large-scale plant production. Here, we demonstrate the use of high-powered single-wavelength lasers for indoor horticulture. They are highly energy-efficient and can be remotely guided to the site of plant growth, thus reducing on-site heat accumulation. Furthermore, laser beams can be tailored to match the absorption profiles of different plant species. We have developed a prototype laser growth chamber and demonstrate that plants grown under laser illumination can complete a full growth cycle from seed to seed with phenotypes resembling those of plants grown under LEDs reported previously. Importantly, the plants have lower expression of proteins diagnostic for light and radiation stress. The phenotypical, biochemical and proteome data show that the single-wavelength laser light is suitable for plant growth and therefore, potentially able to unlock the advantages of this next generation lighting technology for highly energy-efficient horticulture.

Growth and development of Arabidopsis thaliana under single-wavelength red and blue laser light

PubMed Central

Ooi, Amanda; Wong, Aloysius; Ng, Tien Khee; Marondedze, Claudius; Gehring, Christoph; Ooi, Boon S.

2016-01-01

Indoor horticulture offers a sensible solution for sustainable food production and is becoming increasingly widespread. However, it incurs high energy and cost due to the use of artificial lighting such as high-pressure sodium lamps, fluorescent light or increasingly, the light-emitting diodes (LEDs). The energy efficiency and light quality of currently available horticultural lighting is suboptimal, and therefore less than ideal for sustainable and cost-effective large-scale plant production. Here, we demonstrate the use of high-powered single-wavelength lasers for indoor horticulture. They are highly energy-efficient and can be remotely guided to the site of plant growth, thus reducing on-site heat accumulation. Furthermore, laser beams can be tailored to match the absorption profiles of different plant species. We have developed a prototype laser growth chamber and demonstrate that plants grown under laser illumination can complete a full growth cycle from seed to seed with phenotypes resembling those of plants grown under LEDs reported previously. Importantly, the plants have lower expression of proteins diagnostic for light and radiation stress. The phenotypical, biochemical and proteome data show that the single-wavelength laser light is suitable for plant growth and therefore, potentially able to unlock the advantages of this next generation lighting technology for highly energy-efficient horticulture. PMID:27659906

High-aggregate-capacity visible light communication links using stacked multimode polymer waveguides and micro-pixelated LED arrays

NASA Astrophysics Data System (ADS)

Bamiedakis, N.; McKendry, J. J. D.; Xie, E.; Gu, E.; Dawson, M. D.; Penty, R. V.; White, I. H.

2018-02-01

In recent years, light emitting diodes (LEDs) have gained renewed interest for use in visible light communication links (VLC) owing to their potential use as both high-quality power-efficient illumination sources as well as low-cost optical transmitters in free-space and guided-wave links. Applications that can benefit from their use include optical wireless systems (LiFi and Internet of Things), in-home and automotive networks, optical USBs and short-reach low-cost optical interconnects. However, VLC links suffer from the limited LED bandwidth (typically 100 MHz). As a result, a combination of novel LED devices, advanced modulation formats and multiplexing methods are employed to overcome this limitation and achieve high-speed (>1 Gb/s) data transmission over such links. In this work, we present recent advances in the formation of high-aggregate-capacity low cost guided wave VLC links using stacked polymer multimode waveguides and matching micro-pixelated LED (μLED) arrays. μLEDs have been shown to exhibit larger bandwidths (>200 MHz) than conventional broad-area LEDs and can be formed in large array configurations, while multimode polymer waveguides enable the formation of low-cost optical links onto standard PCBs. Here, three- and four-layered stacks of multimode waveguides, as well as matching GaN μLED arrays, are fabricated in order to generate high-density yet low-cost optical interconnects. Different waveguide topologies are implemented and are investigated in terms of loss and crosstalk performance. The initial results presented herein demonstrate good intrinsic crosstalk performance and indicate the potential to achieve >= 0.5 Tb/s/mm2 aggregate interconnection capacity using this low-cost technology.

Analysis of LED arrangement in an array with respect to lens geometry

NASA Astrophysics Data System (ADS)

Ley, Peer-Phillip; Held, Marcel Philipp; Lachmayer, Roland

2018-02-01

Highly adaptive light sources such as LED arrays have been surpassing conventional light sources (halogen, xenon) for automotive applications. Individual LED arrangements within the array, high durability and low energy consumption of the LEDs are some of the reasons. With the introduction of Audi's Matrix beam system, efforts to increase the quantity of pixels were already underway and the stage was practically set for pixel light systems. Current efforts are focused towards the exploration of an optimal LED array density and the use of spatial light modulators. In both cases, one question remains - What arrangement of LEDs is the most suitable in terms of light output efficiency for a given lens geometry? The radiation characteristics of an LED usually shows a Lambertian pattern. Following from the definition of luminous efficacy, this characteristic property of LEDs has a decisive impact on the lens geometry in a given array. Due to the proportional correlation between the lens diameter and the distance of LEDs emission surface to the lens surface. Assuming a constant viewing angle an increase of the distance leads to an increase of the lens diameter. In this paper, two different approaches for an optimized LED array with regards to the LED arrangement will be presented. The introduced designs result from one imaging and one non-imaging optical system, which will be investigated. The paper is concluded with a comparative analysis of the LED array design as a function of the LED pitch and the luminous efficacy.

Progress and prospects of GaN-based LEDs using nanostructures

NASA Astrophysics Data System (ADS)

Zhao, Li-Xia; Yu, Zhi-Guo; Sun, Bo; Zhu, Shi-Chao; An, Ping-Bo; Yang, Chao; Liu, Lei; Wang, Jun-Xi; Li, Jin-Min

2015-06-01

Progress with GaN-based light emitting diodes (LEDs) that incorporate nanostructures is reviewed, especially the recent achievements in our research group. Nano-patterned sapphire substrates have been used to grow an AlN template layer for deep-ultraviolet (DUV) LEDs. One efficient surface nano-texturing technology, hemisphere-cones-hybrid nanostructures, was employed to enhance the extraction efficiency of InGaN flip-chip LEDs. Hexagonal nanopyramid GaN-based LEDs have been fabricated and show electrically driven color modification and phosphor-free white light emission because of the linearly increased quantum well width and indium incorporation from the shell to the core. Based on the nanostructures, we have also fabricated surface plasmon-enhanced nanoporous GaN-based green LEDs using AAO membrane as a mask. Benefitting from the strong lateral SP coupling as well as good electrical protection by a passivation layer, the EL intensity of an SP-enhanced nanoporous LED was significantly enhanced by 380%. Furthermore, nanostructures have been used for the growth of GaN LEDs on amorphous substrates, the fabrication of stretchable LEDs, and for increasing the 3-dB modulation bandwidth for visible light communication. Project supported by the National Natural Science Foundation of China (Grant No. 61334009), the National High Technology Research and Development Program of China (Grant Nos. 2015AA03A101 and 2014BAK02B08), China International Science and Technology Cooperation Program (Grant No. 2014DFG62280), the “Import Outstanding Technical Talent Plan” and “Youth Innovation Promotion Association Program” of the Chinese Academy of Sciences.

High reliable and chromaticity-tunable flip-chip w-LEDs with Ce:YAG glass-ceramics phosphor for long-lifetime automotive headlights applications

NASA Astrophysics Data System (ADS)

Ma, Chaoyang; Cao, Yongge; Shen, Xiaofei; Wen, Zicheng; Ma, Ran; Long, Jiaqi; Yuan, Xuanyi

2017-07-01

Nowadays, major commercial w-LEDs fabricated by the traditionally gold-wire-welding packaging technology have undergone considerable development as indoor/outdoor lighting sources due to its high-energy utilization efficiency, long service life, environmental friendliness, and excellent chromatic stability. While, new generation applications in projections, automotive lighting, street lighting, plaza lighting, and high-end general lighting need further improvements in power handling and light extraction. Herein, transparent Ce:YAG glass-ceramics (GCs) phosphor was prepared by low-temperature co-sintering polycrystalline Ce:YAG phosphor powder and home-made PbO-B2O3-ZnO-SiO2 glass powder. Thereafter, the flip-chip (FC) w-LEDs were fabricated with the GCs phosphor plates and FC blue chips. The GCs-based FC w-LEDs show not only excellent heat- and humidity-resistance characteristics, but also superior optical performances with an LE of 112.8 lm/W, a CRI of 71.2, a CCT of 6103 K as well as a chromaticity coordinate of (0.3202, 0.3298), under a high operation current of 400 mA. The technology route will open a practically commercial feasible approach to achieve excellent performances for advanced high-power FC w-LEDs.

Analysis of energy efficient highway lighting retrofits.

DOT National Transportation Integrated Search

2015-06-01

Solid state lighting technology is advancing rapidly to a point where light emitting diode (LED) lighting : systems can be viable replacements for existing lighting systems using high pressure sodium (HPS). The : present report summarizes analyses co...

Chip-scale thermal management of high-brightness LED packages

NASA Astrophysics Data System (ADS)

Arik, Mehmet; Weaver, Stanton

2004-10-01

The efficiency and reliability of the solid-state lighting devices strongly depend on successful thermal management. Light emitting diodes, LEDs, are a strong candidate for the next generation, general illumination applications. LEDs are making great strides in terms of lumen performance and reliability, however the barrier to widespread use in general illumination still remains the cost or $/Lumen. LED packaging designers are pushing the LED performance to its limits. This is resulting in increased drive currents, and thus the need for lower thermal resistance packaging designs. As the power density continues to rise, the integrity of the package electrical and thermal interconnect becomes extremely important. Experimental results with high brightness LED packages show that chip attachment defects can cause significant thermal gradients across the LED chips leading to premature failures. A numerical study was also carried out with parametric models to understand the chip active layer temperature profile variation due to the bump defects. Finite element techniques were utilized to evaluate the effects of localized hot spots at the chip active layer. The importance of "zero defects" in one of the more popular interconnect schemes; the "epi down" soldered flip chip configuration is investigated and demonstrated.

Visible light metasurfaces based on gallium nitride high contrast gratings

NASA Astrophysics Data System (ADS)

Wang, Zhenhai; He, Shumin; Liu, Qifa; Wang, Wei

2016-05-01

We propose visible-light metasurfaces (VLMs) capable of serving as lens and beam deflecting element based on gallium nitride (GaN) high contrast gratings (HCGs). By precisely manipulating the wavefront of the transmitted light, we theoretically demonstrate an HCG focusing lens with transmissivity of 86.3%, and a VLM with beam deflection angle of 6.09° and transmissivity as high as 91.4%. The proposed all-dielectric metasurfaces are promising for GaN-based visible light-emitting diodes (LEDs), which would be robust and versatile for controlling the output light propagation and polarization, as well as enhancing the extraction efficiency of the LEDs.

Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects

PubMed Central

Titkov, Ilya E.; Karpov, Sergey Yu.; Yadav, Amit; Mamedov, Denis; Zerova, Vera L.

2017-01-01

External quantum efficiency of industrial-grade green InGaN light-emitting diodes (LEDs) has been measured in a wide range of operating currents at various temperatures from 13 K to 300 K. Unlike blue LEDs, the efficiency as a function of current is found to have a multi-peak character, which could not be fitted by a simple ABC-model. This observation correlated with splitting of LED emission spectra into two peaks at certain currents. The characterization data are interpreted in terms of non-uniformity of the LED active region, which is tentatively attributed to extended defects like V-pits. We suggest a new approach to evaluation of temperature-dependent light extraction and internal quantum efficiencies taking into account the active region non-uniformity. As a result, the temperature dependence of light extraction and internal quantum efficiencies have been evaluated in the temperature range mentioned above and compared with those of blue LEDs. PMID:29156543

Engineered core/shell quantum dots as phosphors for solid-state lighting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klimov, Victor Ivanovich; Pietryga, Jeffrey Michael; McDaniel, Hunter

2015-01-14

Light-emitting diodes (LEDs) for solid state light ing (SSL) typically combine a blue or near- ultraviolet drive LED with one or more dow nconverting phosphors to produce “white” light. Further advances in both efficiency and wh ite-light quality will re quire new phosphors with narrow-band, highly efficient emission, particul arly in the red. A team led by principal investigator Dr. Victor Klim ov of Los Alamos National Labo ratory proposes to develop engineered semiconductor nanocrystal quantum dots (QDs) that combine optimal luminescent properties with long-term stability under ty pical downconverting conditions to enable new performance levels in SSL. The whitemore » LED phosphor industry is estimated to have sales of roughly $400 million in 2018 and would significantly benefit from the development of bright and narrow red-emitting QD phosphors because they woul d enable warmer whites without wasting energy by emission of light beyond the response of the human eye. In order to capitalize on the market opportunity, the LANL team is partnering with a local company called UbiQD that will facilitate US manufacturing.« less

Controlling the influence of Auger recombination on the performance of quantum-dot light-emitting diodes

PubMed Central

Bae, Wan Ki; Park, Young-Shin; Lim, Jaehoon; Lee, Donggu; Padilha, Lazaro A.; McDaniel, Hunter; Robel, Istvan; Lee, Changhee; Pietryga, Jeffrey M.; Klimov, Victor I.

2013-01-01

Development of light-emitting diodes (LEDs) based on colloidal quantum dots is driven by attractive properties of these fluorophores such as spectrally narrow, tunable emission and facile processibility via solution-based methods. A current obstacle towards improved LED performance is an incomplete understanding of the roles of extrinsic factors, such as non-radiative recombination at surface defects, versus intrinsic processes, such as multicarrier Auger recombination or electron-hole separation due to applied electric field. Here we address this problem with studies that correlate the excited state dynamics of structurally engineered quantum dots with their emissive performance within LEDs. We find that because of significant charging of quantum dots with extra electrons, Auger recombination greatly impacts both LED efficiency and the onset of efficiency roll-off at high currents. Further, we demonstrate two specific approaches for mitigating this problem using heterostructured quantum dots, either by suppressing Auger decay through the introduction of an intermediate alloyed layer, or by using an additional shell that impedes electron transfer into the quantum dot to help balance electron and hole injection. PMID:24157692

Powering a Home with Just 25 Watts of Solar PV. Super-Efficient Appliances Can Enable Expanded Off-Grid Energy Service Using Small Solar Power Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Phadke, Amol A.; Jacobson, Arne; Park, Won Young

Highly efficient direct current (DC) appliances have the potential to dramatically increase the affordability of off-grid solar power systems used for rural electrification in developing countries by reducing the size of the systems required. For example, the combined power requirement of a highly efficient color TV, four DC light emitting diode (LED) lamps, a mobile phone charger, and a radio is approximately 18 watts and can be supported by a small solar power system (at 27 watts peak, Wp). Price declines and efficiency advances in LED technology are already enabling rapidly increased use of small off-grid lighting systems in Africamore » and Asia. Similar progress is also possible for larger household-scale solar home systems that power appliances such as lights, TVs, fans, radios, and mobile phones. When super-efficient appliances are used, the total cost of solar home systems and their associated appliances can be reduced by as much as 50%. The results vary according to the appliances used with the system. These findings have critical relevance for efforts to provide modern energy services to the 1.2 billion people worldwide without access to the electrical grid and one billion more with unreliable access. However, policy and market support are needed to realize rapid adoption of super-efficient appliances.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fu, Houqiang; Lu, Zhijian; Zhao, Yuji

We study the low efficiency droop characteristics of semipolar InGaN light-emitting diodes (LEDs) using modified rate equation incoporating the phase-space filling (PSF) effect where the results on c-plane LEDs are also obtained and compared. Internal quantum efficiency (IQE) of LEDs was simulated using a modified ABC model with different PSF filling (n{sub 0}), Shockley-Read-Hall (A), radiative (B), Auger (C) coefficients and different active layer thickness (d), where the PSF effect showed a strong impact on the simulated LED efficiency results. A weaker PSF effect was found for low-droop semipolar LEDs possibly due to small quantum confined Stark effect, short carriermore » lifetime, and small average carrier density. A very good agreement between experimental data and the theoretical modeling was obtained for low-droop semipolar LEDs with weak PSF effect. These results suggest the low droop performance may be explained by different mechanisms for semipolar LEDs.« less

Electrode quenching control for highly efficient CsPbBr3 perovskite light-emitting diodes via surface plasmon resonance and enhanced hole injection by Au nanoparticles.

PubMed

Meng, Yan; Wu, Xiaoyan; Xiong, Ziyang; Lin, Chunyan; Xiong, Zuhong; Blount, Ethan; Chen, Ping

2018-04-27

Compared to organic-inorganic hybrid metal halide perovskites, all-inorganic cesium lead halides (e.g, CsPbBr 3 ) hold greater promise in being emissive materials for light-emitting diodes owing to their superior optoelectronic properties as well as their higher stabilities. However, there is still considerable potential for breakthroughs in the current efficiency of CsPbBr 3 perovskite light-emitting diodes (PeLEDs). Electrode quenching is one of the main problems limiting the current efficiency of PeLEDs when poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) is used as the hole injection layer. In this work, electrode quenching control was realized via incorporating Au NPs into PEDOT:PSS. As a result, the CsPbBr 3 PeLEDs realized an improvement in maximum luminescence ranging from ∼2348 to ∼7660 cd m -2 (∼226% enhancement) and current efficiency from 1.65 to 3.08 cd A -1 (∼86% enhancement). Such substantial enhancement of the electroluminescent performance can be attributed to effective electrode quenching control at the PEDOT:PSS/CsPbBr 3 perovskite interface via the combined effects of local surface plasma resonance coupling and enhanced hole transportation in the PEDOT:PSS layer by Au nanoparticles.

Electrode quenching control for highly efficient CsPbBr3 perovskite light-emitting diodes via surface plasmon resonance and enhanced hole injection by Au nanoparticles

NASA Astrophysics Data System (ADS)

Meng, Yan; Wu, Xiaoyan; Xiong, Ziyang; Lin, Chunyan; Xiong, Zuhong; Blount, Ethan; Chen, Ping

2018-04-01

Compared to organic-inorganic hybrid metal halide perovskites, all-inorganic cesium lead halides (e.g, CsPbBr3) hold greater promise in being emissive materials for light-emitting diodes owing to their superior optoelectronic properties as well as their higher stabilities. However, there is still considerable potential for breakthroughs in the current efficiency of CsPbBr3 perovskite light-emitting diodes (PeLEDs). Electrode quenching is one of the main problems limiting the current efficiency of PeLEDs when poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) is used as the hole injection layer. In this work, electrode quenching control was realized via incorporating Au NPs into PEDOT:PSS. As a result, the CsPbBr3 PeLEDs realized an improvement in maximum luminescence ranging from ˜2348 to ˜7660 cd m-2 (˜226% enhancement) and current efficiency from 1.65 to 3.08 cd A-1 (˜86% enhancement). Such substantial enhancement of the electroluminescent performance can be attributed to effective electrode quenching control at the PEDOT:PSS/CsPbBr3 perovskite interface via the combined effects of local surface plasma resonance coupling and enhanced hole transportation in the PEDOT:PSS layer by Au nanoparticles.

Integration of non-Lambertian LED and reflective optical element as efficient street lamp.

PubMed

Pan, Jui-Wen; Tu, Sheng-Han; Sun, Wen-Shing; Wang, Chih-Ming; Chang, Jenq-Yang

2010-06-21

A cost effective, high throughput, and high yield method for the increase of street lamp potency was proposed in this paper. We integrated the imprinting technology and the reflective optical element to obtain a street lamp with high illumination efficiency and without glare effect. The imprinting technique can increase the light extraction efficiency and modulate the intensity distribution in the chip level. The non-Lambertian light source was achieved by using imprinting technique. The compact reflective optical element was added to efficiently suppress the emitting light intensity with small emitting angle for the uniform of illumination intensity and excluded the light with high emitting angle for the prevention of glare. Compared to the conventional street lamp, the novel design has 40% enhancement in illumination intensity, the uniform illumination and the glare effect elimination.

Improvement of GaN light-emitting diodes with surface-treated Al-doped ZnO transparent Ohmic contacts by holographic photonic crystal

NASA Astrophysics Data System (ADS)

Yang, W. F.; Liu, Z. G.; Xie, Y. N.; Cai, J. F.; Liu, S.; Gong, H.; Wu, Z. Y.

2012-06-01

This letter presents a holographic photonic crystal (H-PhC) Al-doped ZnO (AZO) transparent Ohmic contact layer on p-GaN to increase the light output of GaN-based LEDs without destroying the p-GaN. The operating voltage of the PhC LEDs at 20 mA was almost the same as that of the typical planar AZO LEDs. While the resultant PhC LED devices exhibited significant improvements in light extraction, up to 1.22 times that of planar AZO LEDs without PhC integration. Temperature dependence of the integrated photoluminescence intensity indicates that this improvement can be attributed to the increased extraction efficiency due to the surface modification. These results demonstrate that the surface-treated AZO layer by H-PhCs is suitable for fabricating high-brightness GaN-based LEDs.

LEDs are on a roll

NASA Astrophysics Data System (ADS)

Blom, Paul; van Mol, Ton

2011-11-01

Light-emitting diodes are more efficient than conventional lighting, but high production costs limit their uptake. Organic versions that can be produced using a cheap newspaper-style "roll-to-roll" printing process are likely to revolutionize our lighting and signage.

Effect of p-GaN layer grown with H2 carrier gas on wall-plug efficiency of high-power LEDs

NASA Astrophysics Data System (ADS)

Lu, Kuan Fu; Lin, Tien Kun; Liou, Jian Kai; Yang, Chyi Da; Lee, Chong Yi; Tsai, Jeng Da

2017-06-01

The effect of employing different carrier gases (H2 only and 1:1 vol% N2:H2) in the p-type GaN (p-GaN) layer on the wall-plug efficiency (WPE) of high-power light-emitting diodes (LEDs) is studied. Since GaN crystal could be a two-dimension (2-D) growth mode in H2 ambient, better quality and smoother surface of the p-GaN were obtained. The current spreading performance of the p-GaN layer using H2 alone as the carrier gas was enhanced, resulting in advanced light output power (LOP). In addition, turn-on voltage and dynamic resistance at 500 mA, which can strongly contribute to the WPE, were also reduced by 0.12 V and 0.13 Ω, respectively. The studied device with H2 as the carrier gas in the p-GaN layer (p-H2 layer) exhibits 9.5% and 12.4% improvements in LOP and WPE at 500 mA over the device (N2/H2 = 1:1), as well as significantly better electrostatic discharge robustness. Therefore, the use of a p-H2 layer can effectively improve the performance of GaN-based LEDs for high power applications.

Silver Nanowire Transparent Conductive Electrodes for High-Efficiency III-Nitride Light-Emitting Diodes

PubMed Central

Oh, Munsik; Jin, Won-Yong; Jun Jeong, Hyeon; Jeong, Mun Seok; Kang, Jae-Wook; Kim, Hyunsoo

2015-01-01

Silver nanowires (AgNWs) have been successfully demonstrated to function as next-generation transparent conductive electrodes (TCEs) in organic semiconductor devices owing to their figures of merit, including high optical transmittance, low sheet resistance, flexibility, and low-cost processing. In this article, high-quality, solution-processed AgNWs with an excellent optical transmittance of 96.5% at 450 nm and a low sheet resistance of 11.7 Ω/sq were demonstrated as TCEs in inorganic III-nitride LEDs. The transmission line model applied to the AgNW contact to p-GaN showed that near ohmic contact with a specific contact resistance of ~10−3 Ωcm2 was obtained. The contact resistance had a strong bias-voltage (or current-density) dependence: namely, field-enhanced ohmic contact. LEDs fabricated with AgNW electrodes exhibited a 56% reduction in series resistance, 56.5% brighter output power, a 67.5% reduction in efficiency droop, and a approximately 30% longer current spreading length compared to LEDs fabricated with reference TCEs. In addition to the cost reduction, the observed improvements in device performance suggest that the AgNWs are promising for application as next-generation TCEs, to realise brighter, larger-area, cost-competitive inorganic III-nitride light emitters. PMID:26333768

Efficient DNA binding and nuclear uptake by distamycin derivatives conjugated to octa-arginine sequences.

PubMed

Vázquez, Olalla; Blanco-Canosa, Juan B; Vázquez, M Eugenio; Martínez-Costas, Jose; Castedo, Luis; Mascareñas, José L

2008-11-24

Efficient targeting of DNA by designed molecules requires not only careful fine-tuning of their DNA-recognition properties, but also appropriate cell internalization of the compounds so that they can reach the cell nucleus in a short period of time. Previous observations in our group on the relatively high affinity displayed by conjugates between distamycin derivatives and bZIP basic regions for A-rich DNA sites, led us to investigate whether the covalent attachment of a positively charged cell-penetrating peptide to a distamycin-like tripyrrole might yield high affinity DNA binders with improved cell internalization properties. Our work has led to the discovery of synthetic tripyrrole-octa-arginine conjugates that are capable of targeting specific DNA sites that contain A-rich tracts with low nanomolar affinity; they simultaneously exhibit excellent membrane and nuclear translocation properties in living HeLa cells.

Stable Light-Emitting Diodes Using Phase-Pure Ruddlesden-Popper Layered Perovskites.

PubMed

Tsai, Hsinhan; Nie, Wanyi; Blancon, Jean-Christophe; Stoumpos, Constantinos C; Soe, Chan Myae Myae; Yoo, Jinkyoung; Crochet, Jared; Tretiak, Sergei; Even, Jacky; Sadhanala, Aditya; Azzellino, Giovanni; Brenes, Roberto; Ajayan, Pulickel M; Bulović, Vladimir; Stranks, Samuel D; Friend, Richard H; Kanatzidis, Mercouri G; Mohite, Aditya D

2018-02-01

State-of-the-art light-emitting diodes (LEDs) are made from high-purity alloys of III-V semiconductors, but high fabrication cost has limited their widespread use for large area solid-state lighting. Here, efficient and stable LEDs processed from solution with tunable color enabled by using phase-pure 2D Ruddlesden-Popper (RP) halide perovskites with a formula (CH 3 (CH 2 ) 3 NH 3 ) 2 (CH 3 NH 3 ) n -1 Pb n I 3 n +1 are reported. By using vertically oriented thin films that facilitate efficient charge injection and transport, efficient electroluminescence with a radiance of 35 W Sr -1 cm -2 at 744 nm with an ultralow turn-on voltage of 1 V is obtained. Finally, operational stability tests suggest that phase purity is strongly correlated to stability. Phase-pure 2D perovskites exhibit >14 h of stable operation at peak operating conditions with no droop at current densities of several Amperes cm -2 in comparison to mixtures of 2D/3D or 3D perovskites, which degrade within minutes. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Highly Reflective Nonalloyed Ni/Ag/Pt Contact to Mg-Si Codoped p-GaN for Enhanced Efficiency of Light-Emitting Diodes.

PubMed

Oh, Munsik; Kim, Hyunsoo

2015-10-01

The authors report enhanced efficiency of GaN-based light-emitting diodes (LEDs) fabricated with highly reflective nonalloyed Ni/Ag/Pt contact. The Ni/Ag/Pt contact formed on the Mg-Si codoped p-GaN produced the low specific contact resistance of 7.9 x 10(-4) Ωcm2 under as-deposited condition, which is comparable to the reference reflector (annealed at 500 °C for 1 min in oxygen ambient). Current-voltage-temperature measurements and the secondary ion mass spectroscopy revealed that the ohmic mechanism of the nonalloyed Ni/Ag/Pt contact is due to the more generated deep-level states associated with Mg-Si codoping, which act as the efficient hopping centers for the carrier transport at the contact/p-GaN interface. Due to the absence of interfacial reaction, the nonalloyed Ni/Ag/Pt contact showed much higher optical reflectivity (93.4% at 450 nm) as compared to the annealed sample (57.7%), resulting in a 40.5% brighter light output power as compared to the reference LEDs.

Optimizing illumination in the greenhouse using a 3D model of tomato and a ray tracer

PubMed Central

de Visser, Pieter H. B.; Buck-Sorlin, Gerhard H.; van der Heijden, Gerie W. A. M.

2014-01-01

Reduction of energy use for assimilation lighting is one of the most urgent goals of current greenhouse horticulture in the Netherlands. In recent years numerous lighting systems have been tested in greenhouses, yet their efficiency has been very difficult to measure in practice. This simulation study evaluated a number of lighting strategies using a 3D light model for natural and artificial light in combination with a 3D model of tomato. The modeling platform GroIMP was used for the simulation study. The crop was represented by 3D virtual plants of tomato with fixed architecture. Detailed data on greenhouse architecture and lamp emission patterns of different light sources were incorporated in the model. A number of illumination strategies were modeled with the calibrated model. Results were compared to the standard configuration. Moreover, adaptation of leaf angles was incorporated for testing their effect on light use efficiency (LUE). A Farquhar photosynthesis model was used to translate the absorbed light for each leaf into a produced amount of carbohydrates. The carbohydrates produced by the crop per unit emitted light from sun or high pressure sodium lamps was the highest for horizontal leaf angles or slightly downward pointing leaves, and was less for more upward leaf orientations. The simulated leaf angles did not affect light absorption from inter-lighting LED modules, but the scenario with LEDs shining slightly upward (20°) increased light absorption and LUE relative to default horizontal beaming LEDs. Furthermore, the model showed that leaf orientation more perpendicular to the string of LEDs increased LED light interception. The combination of a ray tracer and a 3D crop model could compute optimal lighting of leaves by quantification of light fluxes and illustration by rendered lighting patterns. Results indicate that illumination efficiency increases when the lamp light is directed at most to leaves that have a high photosynthetic potential. PMID:24600461

Replacement policy of residential lighting optimized for cost, energy, and greenhouse gas emissions

NASA Astrophysics Data System (ADS)

Liu, Lixi; Keoleian, Gregory A.; Saitou, Kazuhiro

2017-11-01

Accounting for 10% of the electricity consumption in the US, artificial lighting represents one of the easiest ways to cut household energy bills and greenhouse gas (GHG) emissions by upgrading to energy-efficient technologies such as compact fluorescent lamps (CFL) and light emitting diodes (LED). However, given the high initial cost and rapidly improving trajectory of solid-state lighting today, estimating the right time to switch over to LEDs from a cost, primary energy, and GHG emissions perspective is not a straightforward problem. This is an optimal replacement problem that depends on many determinants, including how often the lamp is used, the state of the initial lamp, and the trajectories of lighting technology and of electricity generation. In this paper, multiple replacement scenarios of a 60 watt-equivalent A19 lamp are analyzed and for each scenario, a few replacement policies are recommended. For example, at an average use of 3 hr day-1 (US average), it may be optimal both economically and energetically to delay the adoption of LEDs until 2020 with the use of CFLs, whereas purchasing LEDs today may be optimal in terms of GHG emissions. In contrast, incandescent and halogen lamps should be replaced immediately. Based on expected LED improvement, upgrading LED lamps before the end of their rated lifetime may provide cost and environmental savings over time by taking advantage of the higher energy efficiency of newer models.

Byproduct metals and rare-earth elements used in the production of light-emitting diodes—Overview of principal sources of supply and material requirements for selected markets

USGS Publications Warehouse

Wilburn, David R.

2012-01-01

The use of light-emitting diodes (LEDs) is expanding because of environmental issues and the efficiency and cost savings achieved compared with use of traditional incandescent lighting. The longer life and reduced power consumption of some LEDs have led to annual energy savings, reduced maintenance costs, and lower emissions of carbon dioxide, sulfur dioxide, and nitrogen oxides from powerplants because of the resulting decrease in energy consumption required for lighting applications when LEDs are used to replace less-energy-efficient sources. Metals such as arsenic, gallium, indium, and the rare-earth elements (REEs) cerium, europium, gadolinium, lanthanum, terbium, and yttrium are important mineral materials used in LED semiconductor technology. Most of the world's supply of these materials is produced as byproducts from the production of aluminum, copper, lead, and zinc. Most of the rare earths required for LED production in 2011 came from China, and most LED production facilities were located in Asia. The LED manufacturing process is complex and is undergoing much change with the growth of the industry and the changes in demand patterns of associated commodities. In many respects, the continued growth of the LED industry, particularly in the general lighting sector, is tied to its ability to increase LED efficiency and color uniformity while decreasing the costs of producing, purchasing, and operating LEDs. Research is supported by governments of China, the European Union, Japan, the Republic of Korea, and the United States. Because of the volume of ongoing research in this sector, it is likely that the material requirements of future LEDs may be quite different than LEDs currently (2011) in use as industry attempts to cut costs by reducing material requirements of expensive heavy rare-earth phosphors and increasing the sizes of wafers for economies of scale. Improved LED performance will allow customers to reduce the number of LEDs in automotive, electronic, and lighting applications, which could reduce the overall demand for material components. Non-Chinese sources for rare earths are being developed, and some of these new sources are likely to be operational in time to meet increasing demand for rare earths from the LED sector. Because most LED component production and manufacturing occurs in Asia and many LED producers have established supply contracts with Chinese producers of rare earths, a significant amount of the metallic gallium, indium, and the rare earths used for LED production will likely continue to come from Chinese sources at least for the next 5 years; however, a greater amount of these materials are now being processed in Japan, the Republic of Korea, and Taiwan. As non-Chinese sources of rare earths come into production, these new mines are likely to be sources of light REEs, but China will likely remain the leading source of supply for the heavy REEs suitable for use as LED dopants and phosphors at least for the next few years. Increased research in the development of phosphors that use smaller amounts of or different REEs is intended to reduce dependence on rare earths from China. Supply disruption of rare earths and other specialty metals could take place if China's specialty metal exports are redirected to domestic markets. The cost of recovery is high and the lifespan for LEDs is comparatively long; thus, the LED waste volume was low in 2010, and few LEDs were recycled. The minute metal content of LEDs leads to a high cost for recovery, so recycling of LEDs outside of electronic waste is unlikely in the near term, although some LED producers are evaluating recycling options. Recycling of metals from LEDs in electronic waste is possible if the costs of recovering metals are justified by demand and metal prices.

Monolithic Flexible Vertical GaN Light-Emitting Diodes for a Transparent Wireless Brain Optical Stimulator.

PubMed

Lee, Han Eol; Choi, JeHyuk; Lee, Seung Hyun; Jeong, Minju; Shin, Jung Ho; Joe, Daniel J; Kim, DoHyun; Kim, Chang Wan; Park, Jung Hwan; Lee, Jae Hee; Kim, Daesoo; Shin, Chan-Soo; Lee, Keon Jae

2018-05-18

Flexible inorganic-based micro light-emitting diodes (µLEDs) are emerging as a significant technology for flexible displays, which is an important area for bilateral visual communication in the upcoming Internet of Things era. Conventional flexible lateral µLEDs have been investigated by several researchers, but still have significant issues of power consumption, thermal stability, lifetime, and light-extraction efficiency on plastics. Here, high-performance flexible vertical GaN light-emitting diodes (LEDs) are demonstrated by silver nanowire networks and monolithic fabrication. Transparent, ultrathin GaN LED arrays adhere to a human fingernail and stably glow without any mechanical deformation. Experimental studies provide outstanding characteristics of the flexible vertical μLEDs (f-VLEDs) with high optical power (30 mW mm -2 ), long lifetime (≈12 years), and good thermal/mechanical stability (100 000 bending/unbending cycles). The wireless light-emitting system on the human skin is successfully realized by transferring the electrical power f-VLED. Finally, the high-density GaN f-VLED arrays are inserted onto a living mouse cortex and operated without significant histological damage of brain. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.

PubMed

Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki

2006-05-18

Compact high-efficiency ultraviolet solid-state light sources--such as light-emitting diodes (LEDs) and laser diodes--are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond and III-V nitride semiconductors (GaN, AlGaN and AlN; refs 3-10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.

Electrical Stress Influences the Efficiency of CH3 NH3 PbI3 Perovskite Light Emitting Devices.

PubMed

Zhao, Lianfeng; Gao, Jia; Lin, YunHui L; Yeh, Yao-Wen; Lee, Kyung Min; Yao, Nan; Loo, Yueh-Lin; Rand, Barry P

2017-06-01

Organic-inorganic hybrid perovskite materials are emerging as semiconductors with potential application in optoelectronic devices. In particular, perovskites are very promising for light-emitting devices (LEDs) due to their high color purity, low nonradiative recombination rates, and tunable bandgap. Here, using pure CH 3 NH 3 PbI 3 perovskite LEDs with an external quantum efficiency (EQE) of 5.9% as a platform, it is shown that electrical stress can influence device performance significantly, increasing the EQE from an initial 5.9% to as high as 7.4%. Consistent with the enhanced device performance, both the steady-state photoluminescence (PL) intensity and the time-resolved PL decay lifetime increase after electrical stress, indicating a reduction in nonradiative recombination in the perovskite film. By investigating the temperature-dependent characteristics of the perovskite LEDs and the cross-sectional elemental depth profile, it is proposed that trap reduction and resulting device-performance enhancement is due to local ionic motion of excess ions, likely excess mobile iodide, in the perovskite film that fills vacancies and reduces interstitial defects. On the other hand, it is found that overstressed LEDs show irreversibly degraded device performance, possibly because ions initially on the perovskite lattice are displaced during extended electrical stress and create defects such as vacancies. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrical Activation Studies of Silicon Implanted Aluminum Gallium Nitride with High Aluminum Mole Fraction

DTIC Science & Technology

2007-12-01

realized with silicon due to its indirect band gap that results in poor quantum efficiency . The first LEDs and laser diodes were developed with...deep UV (λ < 340 nm) still face many challenges and have low internal quantum efficiency . Jong Kyu Kim et al. have developed a light emitting triode...LET) to try to overcome some of the challenges and 16 have produced a lighting device with increased quantum efficiency (16). AlxGa1-xN has been

Differential pulse amplitude modulation for multiple-input single-output OWVLC

NASA Astrophysics Data System (ADS)

Yang, S. H.; Kwon, D. H.; Kim, S. J.; Son, Y. H.; Han, S. K.

2015-01-01

White light-emitting diodes (LEDs) are widely used for lighting due to their energy efficiency, eco-friendly, and small size than previously light sources such as incandescent, fluorescent bulbs and so on. Optical wireless visible light communication (OWVLC) based on LED merges lighting and communications in applications such as indoor lighting, traffic signals, vehicles, and underwater communications because LED can be easily modulated. However, physical bandwidth of LED is limited about several MHz by slow time constant of the phosphor and characteristics of device. Therefore, using the simplest modulation format which is non-return-zero on-off-keying (NRZ-OOK), the data rate reaches only to dozens Mbit/s. Thus, to improve the transmission capacity, optical filtering and pre-, post-equalizer are adapted. Also, high-speed wireless connectivity is implemented using spectrally efficient modulation methods: orthogonal frequency division multiplexing (OFDM) or discrete multi-tone (DMT). However, these modulation methods need additional digital signal processing such as FFT and IFFT, thus complexity of transmitter and receiver is increasing. To reduce the complexity of transmitter and receiver, we proposed a novel modulation scheme which is named differential pulse amplitude modulation. The proposed modulation scheme transmits different NRZ-OOK signals with same amplitude and unit time delay using each LED chip, respectively. The `N' parallel signals from LEDs are overlapped and directly detected at optical receiver. Received signal is demodulated by power difference between unit time slots. The proposed scheme can overcome the bandwidth limitation of LEDs and data rate can be improved according to number of LEDs without complex digital signal processing.

Contact formation and patterning approaches for group-III nitride light emitters

NASA Astrophysics Data System (ADS)

Hou, Wenting

Solid state lighting via light emitting diodes (LEDs) and laser diodes (LDs) is a rapidly progressing technology with the potential to greatly exceed the efficiency of traditional lighting systems. This dissertation focuses on the development of electrical contacts and patterning schemes for highly efficient green LEDs and LD structures. Efficiency of LEDs can be greatly improved by means of nano-patterning processes. LEDs grown on nano-imprint patterned sapphire substrates showed promising performance, with improvement in both internal quantum efficiency and light extraction efficiency. As an alternative to nano-imprint lithography, this study utilized a simple method to generate irregular nano-patterns by a Ni self-assembly process and applied the process to both sapphire substrate and n-GaN template. In both approaches, the nano-patterned LEDs showed an improvement in light output power. For the device fabrication of LEDs and LDs, low-resistance ohmic contacts are essential for high efficiency. In search of a highly transparent ohmic contact to p-type GaN, I analyzed various metal/indium-tin-oxide (ITO) (Ag/ITO, AgCu/ITO, Ni/ITO, and NiZn/ITO) contact schemes and compared them with Ni/Au, NiZn/Ag, and ITO contacts. For ITO-based contacts, the inserted metal layer can boost conductivity while the ITO thickness can be optimized for constructive transmission interference on GaN exceeding the extraction from bare GaN. The best compromise was obtained for an Ag/ITO (3 nm /67 nm) ohmic contact, with a relative transmittance of 97% of the bare GaN near 530 nm, and a specific contact resistance of 3x10-2 O·cm 2. The contact proved particularly suitable for green light emitting diodes in epi-up geometry. Graphene as another alternative transparent p-contact was also evaluated. Furthermore, this dissertation offered a pre-deposition treatment to contact schemes on undoped and n-doped GaN, rendering a standard post-deposition annealing step unnecessary. As-deposited Ti/Al/Ti/Au usually forms a Schottky contact. By means of oxygen rapid thermal annealing prior to the metal deposition, the contact developed an ohmic behavior with a specific contact resistance of 3.8x10-5 O cm2. X-ray photoelectron spectroscopy characterization showed that the Ga 3d electron binding energy increased with the pre-treatment, indicating a shift of the Fermi level closer to the conduction band edge. This explained the improvement in contact performance. While low contact resistance to GaN-based devices has been achieved to p-type and n-type layers separately, contacts are likely to degrade when both types need to be integrated into a single fabrication process in bipolar devices. This dissertation presents a solution to the problem by the pre-deposition oxygen thermal treatment on n-GaN. By utilizing this process, an important gain in device fabrication flexibility was realized. LEDs with the integrated process for both n- and p-contacts showed lower series resistance and lower voltage drop compared to those with separately optimized contacts. In addition to the fabrication of LEDs, the development of green LDs was studied. To extend the emission wavelength of AlGaInN-based LDs to a 500 nm green spectral region, both highly efficient active layers and suitable optical confinement are critical. This work presents the development progress by first identifying active regions that show stimulated emission at 450 nm under optical excitation. Then such layers were embedded in an etched cavity. Under electrical injection, the same transition appeared as a short-wavelength shoulder of a broader band. By using a silver mirror on the p-side, an enhanced optical confinement was obtained, and the 450 nm emission showed an even better dominance over the long-wavelength contribution. As an alternative, an optical confinement was implemented by applying AlGaN cladding layers in ridge wave-guided structures. A superior optical confinement was achieved in an epitaxial ridge re-growth approach. Under pulsed electrical injection, narrow-peak emission in the 510--520 nm range was achieved, rendering the approach suitable for the further development of blue and green laser diodes.

Defect-Reduction Mechanism for Improving Radiative Efficiency in InGaN/GaN Light-Emitting Diodes using InGaN Underlayers

DOE PAGES

Armstrong, Andrew M.; Bryant, Benjamin N.; Crawford, Mary H.; ...

2015-04-01

The influence of a dilute In xGa 1-xN (x~0.03) underlayer (UL) grown below a single In 0.16Ga 0.84N quantum well (SQW), within a light-emitting diode(LED), on the radiative efficiency and deep level defect properties was studied using differential carrier lifetime (DCL) measurements and deep level optical spectroscopy (DLOS). DCL measurements found that inclusion of the UL significantly improved LED radiative efficiency. At low current densities, the non-radiative recombination rate of the LED with an UL was found to be 3.9 times lower than theLED without an UL, while the radiative recombination rates were nearly identical. This, then, suggests that themore » improved radiative efficiency resulted from reduced non-radiative defect concentration within the SQW. DLOS measurement found the same type of defects in the InGaN SQWs with and without ULs. However, lighted capacitance-voltage measurements of the LEDs revealed a 3.4 times reduction in a SQW-related near-mid-gap defect state for the LED with an UL. Furthermore, quantitative agreement in the reduction of both the non-radiative recombination rate (3.9×) and deep level density (3.4×) upon insertion of an UL corroborates deep level defect reduction as the mechanism for improved LED efficiency.« less

Diffusion-Driven Charge Transport in Light Emitting Devices

PubMed Central

Oksanen, Jani; Suihkonen, Sami

2017-01-01

Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized for energy-efficient general lighting, the conventional DHJ design requires burying the active region (AR) inside a pn-junction. This has hindered the development of emitters utilizing nanostructured ARs located close to device surfaces such as nanowires or surface quantum wells. Modern DHJ III-N LEDs also exhibit resistive losses that arise from the DHJ device geometry. The recently introduced diffusion-driven charge transport (DDCT) emitter design offers a novel way to transport charge carriers to unconventionally placed ARs. In a DDCT device, the AR is located apart from the pn-junction and the charge carriers are injected into the AR by bipolar diffusion. This device design allows the integration of surface ARs to semiconductor LEDs and offers a promising method to reduce resistive losses in high power devices. In this work, we present a review of the recent progress in gallium nitride (GaN) based DDCT devices, and an outlook of potential DDCT has for opto- and microelectronics. PMID:29231900

Perovskite Quantum Dots with Near Unity Solution and Neat-Film Photoluminescent Quantum Yield by Novel Spray Synthesis.

PubMed

Dai, Shu-Wen; Hsu, Bo-Wei; Chen, Chien-Yu; Lee, Chia-An; Liu, Hsiao-Yun; Wang, Hsiao-Fang; Huang, Yu-Ching; Wu, Tien-Lin; Manikandan, Arumugam; Ho, Rong-Ming; Tsao, Cheng-Si; Cheng, Chien-Hong; Chueh, Yu-Lun; Lin, Hao-Wu

2018-02-01

In this study, a novel perovskite quantum dot (QD) spray-synthesis method is developed by combining traditional perovskite QD synthesis with the technique of spray pyrolysis. By utilizing this new technique, the synthesis of cubic-shaped perovskite QDs with a homogeneous size of 14 nm is demonstrated, which shows an unprecedented stable absolute photoluminescence quantum yield ≈100% in the solution and even in the solid-state neat film. The highly emissive thin films are integrated with light emission devices (LEDs) and organic light emission displays (OLEDs). The color conversion type QD-LED (ccQD-LED) hybrid devices exhibit an extremely saturated green emission, excellent external quantum efficiency of 28.1%, power efficiency of 121 lm W -1 , and extraordinary forward-direction luminescence of 8 500 000 cd m -2 . The conceptual ccQD-OLED hybrid display also successfully demonstrates high-definition still images and moving pictures with a 119% National Television System Committee 1931 color gamut and 123% Digital Cinema Initiatives-P3 color gamut. These very-stable, ultra-bright perovskite QDs have the properties necessary for a variety of useful applications in optoelectronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Biomimetics: using nature as an inspiring model for human innovation

NASA Technical Reports Server (NTRS)

Bar-Cohen, Yoseph

2006-01-01

The evolution of nature over 3.8 billion years led to the highly effective and power efficient biological mechanisms. Imitating these mechanisms offers enormous potentials for the improvement of our life and the tools we use.

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz.

PubMed

Moustakas, Theodore D; Paiella, Roberto

2017-10-01

This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, 'visible blind' and 'solar blind' detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

NASA Astrophysics Data System (ADS)

Moustakas, Theodore D.; Paiella, Roberto

2017-10-01

This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, ‘visible blind’ and ‘solar blind’ detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

Luminescence and efficiency optimization of InGaN/GaN core-shell nanowire LEDs by numerical modelling

NASA Astrophysics Data System (ADS)

Römer, Friedhard; Deppner, Marcus; Andreev, Zhelio; Kölper, Christopher; Sabathil, Matthias; Strassburg, Martin; Ledig, Johannes; Li, Shunfeng; Waag, Andreas; Witzigmann, Bernd

2012-02-01

We present a computational study on the anisotropic luminescence and the efficiency of a core-shell type nanowire LED based on GaN with InGaN active quantum wells. The physical simulator used for analyzing this device integrates a multidimensional drift-diffusion transport solver and a k . p Schrödinger problem solver for quantization effects and luminescence. The solution of both problems is coupled to achieve self-consistency. Using this solver we investigate the effect of dimensions, design of quantum wells, and current injection on the efficiency and luminescence of the core-shell nanowire LED. The anisotropy of the luminescence and re-absorption is analyzed with respect to the external efficiency of the LED. From the results we derive strategies for design optimization.

InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate.

PubMed

Ke, Wen-Cheng; Lee, Fang-Wei; Chiang, Chih-Yung; Liang, Zhong-Yi; Chen, Wei-Kuo; Seong, Tae-Yeon

2016-12-21

A hybrid patterned sapphire substrate (hybrid-PSS) was prepared using an anodic aluminum oxide etching mask to transfer nanopatterns onto a conventional patterned sapphire substrate with microscale patterns (bare-PSS). The threading dislocation (TD) suppression of light-emitting diodes (LEDs) grown on a hybrid-PSS (HP-LED) exhibits a smaller reverse leakage current compared with that of LEDs grown on a bare-PSS (BP-LED). The strain-free GaN buffer layer and fully strained InGaN active layer were evidenced by cross-sectional Raman spectra and reciprocal space mapping of the X-ray diffraction intensity for both samples. The calculated piezoelectric fields for both samples are close, implying that the quantum-confined Stark effect was not a dominant mechanism influencing the electroluminescence (EL) peak wavelength under a high injection current. The bandgap shrinkage effect of the InGaN well layer was considered to explain the large red-shifted EL peak wavelength under high injection currents. The estimated LED chip temperatures rise from room temperature to 150 °C and 75 °C for BP-LED and HP-LED, respectively, at a 600-mA injection current. This smaller temperature rise of the LED chip is attributed to the increased contact area between the sapphire and the LED structural layer because of the embedded nanopattern. Although the chip generates more heat at high injection currents, the accumulated heat can be removed to outside the chip effectively. The high diffuse reflection (DR) rate of hybrid-PSS increases the escape probability of photons, resulting in an increase in the viewing angle of the LEDs from 130° to 145°. The efficiency droop was reduced from 46% to 35%, effects which can be attributed to the elimination of TDs and strain relaxation by embedded nanopatterns. In addition, the light output power of HP-LED at 360-mA injection currents exhibits a ∼ 22.3% enhancement, demonstrating that hybrid-PSSs are beneficial to apply in high-power LEDs.

Improved light extraction efficiency of InGaN-based multi-quantum well light emitting diodes by using a single die growth.

PubMed

Park, Min Joo; Kwon, K W; Kim, Y H; Park, S H; Kwak, Joon Seop

2011-05-01

We have demonstrated that the light extraction efficiency of the InGaN based multi-quantum well light-emitting diodes (LEDs) can be improved by using a single die growth (SDG) method. The SDG was performed by patterning the n-GaN and sapphire substrate with a size of single chip (600 x 250 microm2) by using a laser scriber, followed by the regrowth of the n-GaN and LED structures on the laser patterned n-GaN. We fabricated lateral LED chips having the SDG structures (SDG-LEDs), in which the thickness of the regrown n-GaN was varied from 2 to 6 microm. For comparison, we also fabricated conventional LED chips without the SDG structures. The SDG-LEDs showed lower operating voltage when compared to the conventional LEDs. In addition, the output power of the SDG-LEDs was significantly higher than that of the conventional LEDs. From optical ray tracing simulations, the increase in the thickness and sidewall angle of the regrown n-GaN and LED structures may enhance photon escapes from the tilted facets of the regrown n-GaN, followed by the increase in light output power and extraction efficiency of the SDG-LEDs.

High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.

PubMed

Chen, Zhaolong; Zhang, Xiang; Dou, Zhipeng; Wei, Tongbo; Liu, Zhiqiang; Qi, Yue; Ci, Haina; Wang, Yunyu; Li, Yang; Chang, Hongliang; Yan, Jianchang; Yang, Shenyuan; Zhang, Yanfeng; Wang, Junxi; Gao, Peng; Li, Jinmin; Liu, Zhongfan

2018-06-08

Single-crystalline GaN-based light-emitting diodes (LEDs) with high efficiency and long lifetime are the most promising solid-state lighting source compared with conventional incandescent and fluorescent lamps. However, the lattice and thermal mismatch between GaN and sapphire substrate always induces high stress and high density of dislocations and thus degrades the performance of LEDs. Here, the growth of high-quality GaN with low stress and a low density of dislocations on graphene (Gr) buffered sapphire substrate is reported for high-brightness blue LEDs. Gr films are directly grown on sapphire substrate to avoid the tedious transfer process and GaN is grown by metal-organic chemical vapor deposition (MOCVD). The introduced Gr buffer layer greatly releases biaxial stress and reduces the density of dislocations in GaN film and In x Ga 1- x N/GaN multiple quantum well structures. The as-fabricated LED devices therefore deliver much higher light output power compared to that on a bare sapphire substrate, which even outperforms the mature process derived counterpart. The GaN growth on Gr buffered sapphire only requires one-step growth, which largely shortens the MOCVD growth time. This facile strategy may pave a new way for applications of Gr films and bring several disruptive technologies for epitaxial growth of GaN film and its applications in high-brightness LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Preparation of balanced trichromatic white phosphors for solid-state white lighting.

PubMed

Al-Waisawy, Sara; George, Anthony F; Jadwisienczak, Wojciech M; Rahman, Faiz

2017-08-01

High quality white light-emitting diodes (LEDs) employ multi-component phosphor mixtures to generate light of a high color rendering index (CRI). The number of distinct components in a typical phosphor mix usually ranges from two to four. Here we describe a systematic experimental technique for starting with phosphors of known chromatic properties and arriving at their respective proportions for creating a blended phosphor to produce light of the desired chromaticity. This method is applicable to both LED pumped and laser diode (LD) pumped white light sources. In this approach, the radiometric power in the down-converted luminescence of each phosphor is determined and that information is used to estimate the CIE chromaticity coordinate of light generated from the mixed phosphor. A suitable method for mixing multi-component phosphors is also described. This paper also examines the effect of light scattering particles in phosphors and their use for altering the spectral characteristics of LD- and LED-generated light. This is the only approach available for making high efficiency phosphor-converted single-color LEDs that emit light of wide spectral width. Copyright © 2016 John Wiley & Sons, Ltd.

Solution processable inverted structure ZnO-organic hybrid heterojuction white LEDs

NASA Astrophysics Data System (ADS)

Bano, N.; Hussain, I.; Soomro, M. Y.; EL-Naggar, A. M.; Albassam, A. A.

2018-05-01

Improving luminance efficiency and colour purity are the most important challenges for zinc oxide (ZnO)-organic hybrid heterojunction light emitting diodes (LEDs), affecting their large area applications. If ZnO-organic hybrid heterojunction white LEDs are fabricated by a hydrothermal method, it is difficult to obtain pure and stable blue emission from PFO due to the presence of an undesirable green emission. In this paper, we present an inverted-structure ZnO-organic hybrid heterojunction LED to avoid green emission from PFO, which mainly originates during device processing. With this configuration, each ZnO nanorod (NR) forms a discrete p-n junction; therefore, large-area white LEDs can be designed without compromising the junction area. The configuration used for this novel structure is glass/ZnO NRs/PFO/PEDOT:PSS/L-ITO, which enables the development of efficient, large-area and low-cost hybrid heterojunction LEDs. Inverted-structure ZnO-organic hybrid heterojunction white LEDs offer several improvements in terms of brightness, size, colour, external quantum efficiency and a wider applicability as compared to normal architecture LEDs.

Investigation of efficiency enhancement in InGaN MQW LED with compositionally step graded GaN/InAlN/GaN multi-layer barrier

NASA Astrophysics Data System (ADS)

Prajoon, P.; Anuja Menokey, M.; Charles Pravin, J.; Ajayan, J.; Rajesh, S.; Nirmal, D.

2018-04-01

The advantage of InGaN multiple Quantum well (MQW) Light emitting diode (LED) on a SiC substrate with compositionally step graded GaN/InAlN/GaN multi-layer barrier (MLB) is studied. The Internal quantum efficiency, Optical power, current-voltage characteristics, spontaneous emission rate and carrier distribution profile in the active region are investigated using Sentaurus TCAD simulation. An analytical model is also developed to describe the QW carrier injection efficiency, by including carrier leakage mechanisms like carrier overflow, thermionic emission and tunnelling. The enhanced electron confinement, reduced carrier asymmetry, and suppressed carrier overflow in the active region of the MLB MQW LED leads to render a superior performance than the conventional GaN barrier MQW LED. The simulation result also elucidates the efficiency droop behaviour in the MLB MQW LED, it suggests that the efficiency droop effect is remarkably improved when the GaN barrier is replaced with GaN/InAlN/GaN MLB barrier. The analysis shows a dominating behaviour of carrier escape mechanism due to tunnelling. Moreover, the lower lattice mismatching of SiC substrate with GaN epitaxial layer is attributed with good crystal quality and reduced polarization effect, ultimately enhances the optical performance of the LEDs.

Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

NASA Astrophysics Data System (ADS)

Liu, Chao; Ren, Zhi-Wei; Chen, Xin; Zhao, Bi-Jun; Wang, Xing-Fu; Yin, Yi-An; Li, Shu-Ti

2013-05-01

P-InGaN/p-GaN superlattices (SLs) are developed for a hole accumulation layer (HAL) of a blue light emitting diode (LED). Free hole concentration as high as 2.6 × 1018 cm-3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp2Mg flow rates are then incorporated between the multi-quantum well and AlGaN electron blocking layer as an HAL, which leads to the enhancement of light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. Meanwhile, the efficiency droop is also effectively alleviated in the LED with the SL HAL. The improved performance is attributed to the increased hole injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.

Progress in LED technology for solid-state lighting

NASA Astrophysics Data System (ADS)

Bhardwaj, Jy; Guth, Greg; Cesaratto, John M.; Shchekin, Oleg B.; Soer, Wouter A.; Götz, Werner; Bonné, Ron; Song, Zhihua F.; den Breejen, Jeroen

2017-02-01

As solid-state lighting adoption moves from bulb socket replacement to lighting system engineering, luminaire manufacturers are beginning to actualize far greater cost savings through luminaire optimization rather than the simplistic process of component cost pareto management. Indeed, there are an increasing number of applications in which we see major shifts in the value chain in terms of increasing the L1 (LED) and L2 (LED array on PCB) value. The L1 value increase stems from a number of factors ranging from simply higher performing LEDs reducing the LED count, to L1 innovation such as high voltage LEDs, optimizing driver efficiency or to the use of high luminance LEDs enabling compact optics, allowing not only more design freedom but also cost reduction through space and weight savings. The L2 value increase is realized predominantly through increasing L2 performance with the use of algorithms that optimize L1 selection and placement and/or through L2 integration of drivers, control electronics, sensors, secondary lens and/or environmental protection, which is also initiating level collapse in the value chain. In this paper we will present the L1 and L2 innovations that are enabling this disruption as well as provide examples of fixture/luminaire level benefits.

Increased effective reflection and transmission at the GaN-sapphire interface of LEDs grown on patterned sapphire substrates

NASA Astrophysics Data System (ADS)

Dongxue, Wu; Ping, Ma; Boting, Liu; Shuo, Zhang; Junxi, Wang; Jinmin, Li

2016-10-01

The effect of patterned sapphire substrate (PSS) on the top-surface (P-GaN-surface) and the bottom-surface (sapphire-surface) of the light output power (LOP) of GaN-based LEDs was investigated, in order to study the changes in reflection and transmission of the GaN-sapphire interface. Experimental research and computer simulations were combined to reveal a great enhancement in LOP from either the top or bottom surface of GaN-based LEDs, which are prepared on patterned sapphire substrates (PSS-LEDs). Furthermore, the results were compared to those of the conventional LEDs prepared on the planar sapphire substrates (CSS-LEDs). A detailed theoretical analysis was also presented to further support the explanation for the increase in both the effective reflection and transmission of PSS-GaN interface layers and to explain the causes of increased LOP values. Moreover, the bottom-surface of the PSS-LED chip shows slightly increased light output performance when compared to that of the top-surface. Therefore, the light extraction efficiency (LEE) can be further enhanced by integrating the method of PSS and flip-chip structure design. Project supported by the National High Technology Program of China (No. Y48A040000) and the National High Technology Program of China (No. Y48A040000).

Carrier lifetimes in polar InGaN-based LEDs

NASA Astrophysics Data System (ADS)

Wang, Lai; Jin, Jie; Hao, Zhibiao; Luo, Yi

2018-02-01

Measurement of carrier lifetime is very important to understand the physics in light-emitting diodes (LEDs), as it builds a link between carrier concentration and excitation power or current density. In this paper, we present our study on optical and electrical characterizations on carrier lifetimes in polar InGaN-based LEDs. First, a carrier rate equation model is proposed to explain the non-exponential nature of time-resolved photoluminescence (TRPL) decay curves, wherein exciton recombination is replaced by bimolecular recombination, considering the influence of polarization field on electron-hole pairs. Then, nonradiative recombination and radiative recombination coefficients can be deduced from fitting and used to calculate the radiative recombination efficiency. By comparing with the temperature-dependent photoluminescence (TDPL) and power-dependent photoluminescence (PDPL), it is found these three methods provide the consistent results. Second, differential carrier lifetimes depending on injection current are measured in commercial near-ultraviolet (NUV), blue and green LEDs. It is found that carrier lifetime is longer in green one and shorter in NUV one, which is attributed to the influence of polarization-induced quantum confined Stark effect (QCSE). This result implies the carrier density is higher in green LED while lower NUV LED, even the injection current is the same. By ignoring Auger recombination and fitting the efficiency-current and carrier lifetime-current curves simultaneously, the dependence of injection efficiency on carrier concentration in different LED samples are plotted. The NUV LED, which has the shallowest InGaN quantum well, actually exhibits the most serious efficiency droop versus carrier concentration. Then, the approaches to overcome the efficiency droop are discussed.

Aptamer-conjugated nanomaterials and their applications

PubMed Central

Yang, Liu; Ye, Mao; Yang, Ronghua; Fu, Ting; Chen, Yan; Wang, Kemin

2011-01-01

The combination of aptamers with novel nanomaterials, including nanomaterial-based aptamer bioconjugates. has attracted considerable interest and has led to a wide variety of applications. In this review, we discuss how a variety of nanomaterials, including gold, silica and magnetic nanoparticles, as well as carbon nanotubes, hydrogels, liposomes and micelles, have been used to functionalize aptamers for a variety of applications. These aptamer functionalized materials have led to advances in amplified biosensing, cancer cell-specific recognition, high-efficiency separation, and targeted drug delivery. PMID:22016112

Efficiency of a flapping propulsion system based on two side-by-side pitching foils

NASA Astrophysics Data System (ADS)

Huera-Huarte, Francisco

2017-11-01

We explore the propulsive performance of two foils flapping side-by-side in a wide variety of configurations, for different foil separations, pitching amplitudes and frequencies and phase differences. Direct force and torque measurements will be shown in each situation, after a thorough parametric study, that led to the identification of highly efficient modes of propulsion. The especially designed experimental rig allowed the computation of efficiencies globally and at each shaft in the system. Planar and volumetric Particle Image Velocimetry (PIV) allowed a detailed description of the wake generated by the system, for each different kinematics investigated. The investigation is part of an ambitious project with the aim of producing a high efficient and highly manoeuvrable flapping propulsion system for underwater vehicles. Funding from Spanish Ministry MINECO through Grant DPI2015-71645-P is gratefully acknowledged.

Heterojunction light emitting diodes fabricated with different n-layer oxide structures on p-GaN layers by magnetron sputtering

NASA Astrophysics Data System (ADS)

Kong, Bo Hyun; Han, Won Suk; Kim, Young Yi; Cho, Hyung Koun; Kim, Jae Hyun

2010-06-01

We grew heterojunction light emitting diode (LED) structures with various n-type semiconducting layers by magnetron sputtering on p-type GaN at high temperature. Because the undoped ZnO used as an active layer was grown under oxygen rich atmosphere, all LED devices showed the EL characteristics corresponding to orange-red wavelength due to high density of oxygen interstitial, which was coincident with the deep level photoluminescence emission of undoped ZnO. The use of the Ga doped layers as a top layer provided the sufficient electron carriers to active region and resulted in the intense EL emission. The LED sample with small quantity of Mg incorporated in MgZnO as an n-type top layer showed more intense emission than the LED with ZnO, in spite of the deteriorated electrical and structural properties of the MgZnO film. This might be due to the improvement of output extraction efficiency induced by rough surface.

[A new non-contact method based on relative spectral intensity for determining junction temperature of LED].

PubMed

Qiu, Xi-Zhen; Zhang, Fang-Hui

2013-01-01

The high-power white LED was prepared based on the high thermal conductivity aluminum, blue chips and YAG phosphor. By studying the spectral of different junction temperature, we found that the radiation spectrum of white LED has a minimum at 485 nm. The radiation intensity at this wavelength and the junction temperature show a good linear relationship. The LED junction temperature was measured based on the formula of relative spectral intensity and junction temperature. The result measured by radiation intensity method was compared with the forward voltage method and spectral method. The experiment results reveal that the junction temperature measured by this method was no more than 2 degrees C compared with the forward voltage method. It maintains the accuracy of the forward voltage method and overcomes the small spectral shift of spectral method, which brings the shortcoming on the results. It also had the advantages of practical, efficient and intuitive, noncontact measurement, and non-destruction to the lamp structure.

Recent radial turbine research at the NASA Lewis Research Center

NASA Technical Reports Server (NTRS)

Rohlik, H. E.; Kofskey, M. G.

1971-01-01

The high efficiencies of small radial turbines led to their application in space power systems and numerous APU and shaft power engines. Experimental and analytical work associated with these systems included examination of blade-shroud clearance, blade loading, and exit diffuser design. Results indicate high efficiency over a wide range of specific speed and also insensitivity to clearance and blade loading in the radial part of the rotor. The exit diffuser investigation indicated that a conventional conical outer wall may not provide the velocity variation consistent with minimum overall diffuser loss.

Collimating lens for light-emitting-diode light source based on non-imaging optics.

PubMed

Wang, Guangzhen; Wang, Lili; Li, Fuli; Zhang, Gongjian

2012-04-10

A collimating lens for a light-emitting-diode (LED) light source is an essential device widely used in lighting engineering. Lens surfaces are calculated by geometrical optics and nonimaging optics. This design progress does not rely on any software optimization and any complex iterative process. This method can be used for any type of light source not only Lambertian. The theoretical model is based on point source. But the practical LED source has a certain size. So in the simulation, an LED chip whose size is 1 mm*1 mm is used to verify the feasibility of the model. The mean results show that the lenses have a very compact structure and good collimating performance. Efficiency is defined as the ratio of the flux in the illuminated plane to the flux from LED source without considering the lens material transmission. Just investigating the loss in the designed lens surfaces, the two types of lenses have high efficiencies of more than 90% and 99%, respectively. Most lighting area (possessing 80% flux) radii are no more than 5 m when the illuminated plane is 200 m away from the light source.

Application of 265-nm UVC LED Lighting to Sterilization of Typical Gram Negative and Positive Bacteria

NASA Astrophysics Data System (ADS)

Lee, Yong Wook; Yoon, Hyung Do; Park, Jae-Hyoun; Ryu, Uh-Chan

2018-05-01

UV LED lightings have been displacing conventional UV lamps due to their high efficiency, long lifetime, etc. A sterilizing lighting was prepared by assembling a UV LED module composed of 265-nm UVC LEDs and a silica lens array with a driver module comprised of a driver IC controlling pulse width modulation and constant current. The silica lens array was designed and fabricated to focus UV beam and simultaneously to give a uniform light distribution over specimens. Then pasteurizing effect of the lighting was analyzed for four kinds of bacteria and one yeast which are dangerous to people with low immunity. Sterilizing tests on these germs were carried out at the both exposure distances of 10 and 100 mm for various exposure durations up to 600 s.

Pulsed characterization of a UV LED for pulsed power applications on a silicon carbide photoconductive semiconductor switch

NASA Astrophysics Data System (ADS)

Wilson, Nicholas; Mauch, Daniel; Meyers, Vincent; Feathers, Shannon; Dickens, James; Neuber, Andreas

2017-08-01

The electrical and optical characteristics of a high-power UV light emitting diode (LED) (365 nm wavelength) were evaluated under pulsed operating conditions at current amplitudes several orders of magnitude beyond the LED's manufacturer specifications. Geared towards triggering of photoconductive semiconductor switches (PCSSs) for pulsed power applications, measurements were made over varying pulse widths (25 ns-100 μs), current (0 A-250 A), and repetition rates (single shot-5 MHz). The LED forward voltage was observed to increase linearly with increasing current (˜3.5 V-53 V) and decrease with increasing pulse widths. The peak optical power observed was >30 W, and a maximum system efficiency of 23% was achieved. The evaluated LED and auxiliary hardware were successfully used as the optical trigger source for a 4H-SiC PCSS. The lowest measured on-resistance of SiC was approximately 67 kΩ.

Pulsed characterization of a UV LED for pulsed power applications on a silicon carbide photoconductive semiconductor switch.

PubMed

Wilson, Nicholas; Mauch, Daniel; Meyers, Vincent; Feathers, Shannon; Dickens, James; Neuber, Andreas

2017-08-01

The electrical and optical characteristics of a high-power UV light emitting diode (LED) (365 nm wavelength) were evaluated under pulsed operating conditions at current amplitudes several orders of magnitude beyond the LED's manufacturer specifications. Geared towards triggering of photoconductive semiconductor switches (PCSSs) for pulsed power applications, measurements were made over varying pulse widths (25 ns-100 μs), current (0 A-250 A), and repetition rates (single shot-5 MHz). The LED forward voltage was observed to increase linearly with increasing current (∼3.5 V-53 V) and decrease with increasing pulse widths. The peak optical power observed was >30 W, and a maximum system efficiency of 23% was achieved. The evaluated LED and auxiliary hardware were successfully used as the optical trigger source for a 4H-SiC PCSS. The lowest measured on-resistance of SiC was approximately 67 kΩ.

Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical Injection.

PubMed

Zheng, Jinjian; Li, Shuiqing; Chou, Chilun; Lin, Wei; Xun, Feilin; Guo, Fei; Zheng, Tongchang; Li, Shuping; Kang, Junyong

2015-12-04

Light-emitting diode (LED) efficiency has attracted considerable interest because of the extended use of solid-state lighting. Owing to lack of direct measurement, identification of the reasons for efficiency droop has been restricted. A direct measurement technique is developed in this work for characterization of biaxial stress in GaN-based blue LEDs under electrical injection. The Raman shift of the GaN E2 mode evidently decreases by 4.4 cm(-1) as the driving current on GaN-based LEDs increases to 700 mA. Biaxial compressive stress is released initially and biaxial tensile stress builds up as the current increases with respect to the value of stress-free GaN. First-principles calculations reveal that electron accumulation is responsible for the stress variation in InxGa1-xN/GaN quantum wells, and then reduces the transition probability among quantum levels. This behavior is consistent with the measured current-dependent external quantum efficiency. The rule of biaxial stress-dependent efficiency is further validated by controlling the biaxial stress of GaN-based LEDs with different sapphire substrate thicknesses. This work provides a method for direct observation of the biaxial stress effect on efficiency droop in LEDs under electrical injection.

Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical Injection

PubMed Central

Zheng, Jinjian; Li, Shuiqing; Chou, Chilun; Lin, Wei; Xun, Feilin; Guo, Fei; Zheng, Tongchang; Li, Shuping; Kang, Junyong

2015-01-01

Light-emitting diode (LED) efficiency has attracted considerable interest because of the extended use of solid-state lighting. Owing to lack of direct measurement, identification of the reasons for efficiency droop has been restricted. A direct measurement technique is developed in this work for characterization of biaxial stress in GaN-based blue LEDs under electrical injection. The Raman shift of the GaN E2 mode evidently decreases by 4.4 cm−1 as the driving current on GaN-based LEDs increases to 700 mA. Biaxial compressive stress is released initially and biaxial tensile stress builds up as the current increases with respect to the value of stress-free GaN. First-principles calculations reveal that electron accumulation is responsible for the stress variation in InxGa1−xN/GaN quantum wells, and then reduces the transition probability among quantum levels. This behavior is consistent with the measured current-dependent external quantum efficiency. The rule of biaxial stress-dependent efficiency is further validated by controlling the biaxial stress of GaN-based LEDs with different sapphire substrate thicknesses. This work provides a method for direct observation of the biaxial stress effect on efficiency droop in LEDs under electrical injection. PMID:26634816

Processing technology for high efficiency silicon solar cells

NASA Technical Reports Server (NTRS)

Spitzer, M. B.; Keavney, C. J.

1985-01-01

Recent advances in silicon solar cell processing have led to attainment of conversion efficiency approaching 20%. The basic cell design is investigated and features of greatest importance to achievement of 20% efficiency are indicated. Experiments to separately optimize high efficiency design features in test structures are discussed. The integration of these features in a high efficiency cell is examined. Ion implantation has been used to achieve optimal concentrations of emitter dopant and junction depth. The optimization reflects the trade-off between high sheet conductivity, necessary for high fill factor, and heavy doping effects, which must be minimized for high open circuit voltage. A second important aspect of the design experiments is the development of a passivation process to minimize front surface recombination velocity. The manner in which a thin SiO2 layer may be used for this purpose is indicated without increasing reflection losses, if the antireflection coating is properly designed. Details are presented of processing intended to reduce recombination at the contact/Si interface. Data on cell performance (including CZ and ribbon) and analysis of loss mechanisms are also presented.

Efficiency and rumen responses in younger and older Holstein heifers limit-fed diets of differing energy density.

PubMed

Zanton, G I; Heinrichs, A J

2016-04-01

The objective of this study was to evaluate the effects of limit feeding diets of different predicted energy density on the efficiency of utilization of feed and nitrogen and rumen responses in younger and older Holstein heifers. Eight rumen-cannulated Holstein heifers (4 heifers beginning at 257 ± 7 d, hereafter "young," and 4 heifers beginning at 610 ± 16 d, hereafter "old") were limit-fed high [HED; 2.64 Mcal/kg of dry matter (DM), 15.31% crude protein (CP)] or low (LED; 2.42 Mcal/kg of DM, 14.15% CP) energy density diets according to a 4-period, split-plot Latin square design with 28-d periods. Diets were limit-fed to provide isonitrogenous and isoenergetic intake on a rumen empty body weight (BW) basis at a level predicted to support approximately 800 g/d of average daily gain. During the last 7d of each period, rumen contents were subsampled over a 24-h period, rumen contents were completely evacuated, and total collection of feces and urine was made over 4d. Intakes of DM and water were greater for heifers fed LED, although, by design, calculated intake of metabolizable energy did not differ between age groups or diets when expressed relative to rumen empty BW. Rumen pH was lower, ammonia (NH3-N) concentration tended to be higher, and volatile fatty acids (VFA) concentration was not different for HED compared with LED and was unaffected by age group. Rumen content mass was greater for heifers fed LED and for old heifers, so when expressing rumen fermentation responses corrected for this difference in pool size, NH3-N pool size was not different between diets and total moles of VFA in the rumen were greater for heifers fed LED, whereas these pool sizes were greater for old heifers. Total-tract digestibility of potentially digestible neutral detergent fiber (NDF) was greater in heifers fed LED and for young heifers, whereas the fractional rate of ruminal passage and digestion of NDF were both greater in heifers fed LED. Digestibility of N was greater for heifers fed HED, but was unaffected by age group, whereas the efficiency of N retention was greater for heifers fed HED and for young heifers. Manure output was reduced in heifers fed HED, but the effect was largest in old heifers. Results confirm previous studies in which young heifers utilize N more efficiently than old heifers, primarily through greater efficiency of postabsorptive metabolism. Results also support the concept of limit feeding HED diets as a potential means to reduce manure excretion and increase nitrogen efficiency. Copyright © 2016 American Dairy Science Association. Published by Elsevier Inc. All rights reserved.

Interfacial engineering with ultrathin poly (9,9-di-n-octylfluorenyl-2,7-diyl) (PFO) layer for high efficient perovskite light-emitting diodes

NASA Astrophysics Data System (ADS)

Lin, Chunyan; Chen, Ping; Xiong, ZiYang; Liu, Debei; Wang, Gang; Meng, Yan; Song, Qunliang

2018-02-01

Organic-inorganic hybrid perovskites have attracted great attention in the field of lighting and display due to their very high color purity and low-cost solution-process. Researchers have done a lot of work in realizing high performance electroluminescent devices. However, the current efficiency (CE) of methyl-ammonium lead halide perovskite light-emitting diodes (PeLEDs) still needs to be improved. Herein, we demonstrate the enhanced performance of PeLEDs through introducing an ultrathin poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO) buffer layer between poly(3,4-ethylendioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and CH3NH3PbBr3 perovskite. Compared to the reference device without PFO, the optimal device luminous intensity, the maximum CE, and the maximum external quantum efficiency increases from 8139 cd m-2 to 30 150 cd m-2, from 7.20 cd A-1 (at 6.8 V) to 10.05 cd A-1 (at 6.6 V), and from 1.73% to 2.44%, respectively. The ultrathin PFO layer not only reduces the exciton quenching at the interface between the hole-transport layer and emission layer, but also passivates the shallow-trap ensure increasing hole injection, as well as increases the coverage of perovskite film.

LED solution for E14 candle lamp

NASA Astrophysics Data System (ADS)

Li, Yun; Liu, Ye; Boonekamp, Erik P.; Shi, Lei; Mei, Yi; Jiang, Tan; Guo, Qing; Wu, Huarong

2009-08-01

On a short to medium term, energy efficient retrofit LED products can offer an attractive solution for traditional lamps replacement in existing fixtures. To comply with user expectations, LED retrofit lamps should not only have the same mechanical interface to fit (socket and shape), but also have the similar light effect as the lamps they replace. The decorative lighting segment shows the best conditions to meet these requirements on short term. In 2008, Philips Lighting Shanghai started with the development of an LED candle lamp for the replacement of a 15W Candle shape (B35 E14) incandescent bulb, which is used in e.g. chandeliers. In this decorative application the main objective is not to generate as much light as possible, but the application requires the lamp to have a comparable look and, primarily, the same light effect as the incandescent candle lamp. This effect can be described as sparkling light, and it has to be directed sufficiently downwards (i.e., in the direction of the base of the lamp). These requirements leave very limited room for optics, electronics, mechanics and thermal design to play with in the small outline of this lamp. The main voltage AC LED concept is chosen to save the space for driver electronics. However the size of the AC LED is relatively big, which makes the optical design challenging. Several optical solutions to achieve the required light effect, to improve the optical efficiency, and to simplify the system are discussed. A novel prismatic lens has been developed which is capable of transforming the Lambertian light emission from typical high power LEDs into a butter-fly intensity distribution with the desired sparkling light effect. Thanks to this lens no reflecting chamber is needed, which improves the optical efficiency up to 70%, while maintaining the compact feature of the original optics. Together with advanced driver solution and thermal solution, the resulting LED candle lamp operates at 230V, consumes 1.8W, and delivers about 55 lm at 3000K with the requested radiation pattern and sparkle effect. Some field tests were done with positive feedback.

Enhanced characteristics of blue InGaN /GaN light-emitting diodes by using selective activation to modulate the lateral current spreading length

NASA Astrophysics Data System (ADS)

Lin, Ray-Ming; Lu, Yuan-Chieh; Chou, Yi-Lun; Chen, Guo-Hsing; Lin, Yung-Hsiang; Wu, Meng-Chyi

2008-06-01

We have studied the characteristics of blue InGaN /GaN multiquantum-well light-emitting diodes (LEDs) after reducing the length of the lateral current path through the transparent layer through formation of a peripheral high-resistance current-blocking region in the Mg-doped GaN layer. To study the mechanism of selective activation in the Mg-doped GaN layer, we deposited titanium (Ti), gold (Au), Ti /Au, silver, and copper individually onto the Mg-doped GaN layer and investigated their effects on the hole concentration in the p-GaN layer. The Mg-doped GaN layer capped with Ti effectively depressed the hole concentration in the p-GaN layer by over one order of magnitude relative to that of the as-grown layer. This may suggest that high resistive regions are formed by diffusion of Ti and depth of high resistive region from the p-GaN surface depends on the capped Ti film thickness. Selective activation of the Mg-doped GaN layer could be used to modulate the length of the lateral current path. Furthermore, the external quantum efficiency of the LEDs was improved significantly after reducing the lateral current spreading length. In our best result, the external quantum efficiency was 52.3% higher (at 100mA) than that of the as-grown blue LEDs.

Emission rate and internal quantum efficiency enhancement in different geometrical shapes of GaN LED

NASA Astrophysics Data System (ADS)

Rashid, S.; Wahid, M. H. A.; Hambali, N. A. M. Ahmad; Halim, N. S. A. Abdul; Ramli, M. M.; Shahimin, M. M.

2017-09-01

This work is based on the development of light emitting diode (LED) using different geometry of top surface on GaN p-n junction structure. Three types of LED chips are designed with different top surface to differ whether p-type layer or p contact plays an important role in improving its efficiency. The voltage applied ranges from 0V to 4V. Current-voltage characteristic for all three samples are obtained and analyzed. The results show that dome shaped of p-type layer operating at 4V increases the emission rate and internal quantum efficiency up to 70%, which is two times higher than basic cylindrically LED chip. Moreover, this new design effectively solved the higher forward voltage problem of the usual curve surface of p-contact GaN LED.

Replicative manufacturing of complex lighting optics by non-isothermal glass molding

NASA Astrophysics Data System (ADS)

Kreilkamp, Holger; Vu, Anh Tuan; Dambon, Olaf; Klocke, Fritz

2016-09-01

The advantages of LED lighting, especially its energy efficiency and the long service life have led to a wide distribution of LED technology in the world. However, in order to make fully use of the great potential that LED lighting offers, complex optics are required to distribute the emitted light from the LED efficiently. Nowadays, many applications use polymer optics which can be manufactured at low costs. However, due to ever increasing luminous power, polymer optics reach their technological limits. Due to its outstanding properties, especially its temperature resistance, resistance against UV radiation and its long term stability, glass is the alternative material of choice for the use in LED optics. This research is introducing a new replicative glass manufacturing approach, namely non-isothermal glass molding (NGM) which is able to manufacture complex lighting optics in high volumes at competitive prices. The integration of FEM simulation at the early stage of the process development is presented and helps to guarantee a fast development cycle. A coupled thermo-mechanical model is used to define the geometry of the glass preform as well as to define the mold surface geometry. Furthermore, simulation is used to predict main process outcomes, especially in terms of resulting form accuracy of the molded optics. Experiments conducted on a commercially available molding machine are presented to validate the developed simulation model. Finally, the influence of distinct parameters on important process outcomes like form accuracy, surface roughness, birefringence, etc. is discussed.

Efficiency improvement of GaN-on-silicon thin-film light-emitting diodes with optimized via-like n-electrodes

NASA Astrophysics Data System (ADS)

Feng, Bo; Deng, Biao; Fu, Yi; Liu, Le Gong; Li, Zeng Cheng; Feng, Mei Xin; Zhao, Han Min; Sun, Qian

2017-07-01

This work reports a significant improvement in efficiency by optimizing the via-like n-electrode architecture design of a GaN-based thin-film LED grown on a 6-inch silicon substrate. The external quantum efficiency of the as-fabricated 1.1 mm × 1.1 mm via-thin-film LED chip at 350 mA was increased by 11.3% compared to that of a vertical thin-film LED chip with a conventional finger-like n-electrode. Detailed analysis of encapsulation gain and false color emission patterns illustrated that the significantly improved LED performance was due to enhanced light extraction efficiency and more uniform current spreading, both of which can be attributed to the optimized via-thin-film chip structure. Minimizing the light loss at the periphery of the Ag mirror was demonstrated to be a critical factor for improving light extraction, rather than simply replacing the finger-like n-electrodes with via-like ones. After encapsulation, the median blue lamp power and the wall-plug efficiency of the via-thin-film LED at 350 mA reached 659 mW and 63.7%, respectively.

Internal Quantum Efficiency of Led Structures at Various Charge Carrier Distributions Over InGaN/GaN Quantum Wells

NASA Astrophysics Data System (ADS)

Romanov, I. S.; Prudaev, I. A.; Kopyev, V. V.

2018-06-01

The results of studying the effect of the thickness of GaN barrier layers in the active region of LED structures with InGaN/GaN quantum wells on the internal quantum efficiency (IQE) of photoluminescence are presented. It is shown that a decrease in the thickness of the GaN barrier layers from 15 to 3 nm leads to an increase in the maximum value of IQE and to a shift of the maximum to the region of high excitation powers. The result obtained is explained with consideration for the decrease in the Auger recombination rate due to a more uniform distribution of charge carriers over the active region in structures with a barrier thickness of 3 nm.

Ultrapure Green Light-Emitting Diodes Using Two-Dimensional Formamidinium Perovskites: Achieving Recommendation 2020 Color Coordinates.

PubMed

Kumar, Sudhir; Jagielski, Jakub; Kallikounis, Nikolaos; Kim, Young-Hoon; Wolf, Christoph; Jenny, Florian; Tian, Tian; Hofer, Corinne J; Chiu, Yu-Cheng; Stark, Wendelin J; Lee, Tae-Woo; Shih, Chih-Jen

2017-09-13

Pure green light-emitting diodes (LEDs) are essential for realizing an ultrawide color gamut in next-generation displays, as is defined by the recommendation (Rec.) 2020 standard. However, because the human eye is more sensitive to the green spectral region, it is not yet possible to achieve an ultrapure green electroluminescence (EL) with a sufficiently narrow bandwidth that covers >95% of the Rec. 2020 standard in the CIE 1931 color space. Here, we demonstrate efficient, ultrapure green EL based on the colloidal two-dimensional (2D) formamidinium lead bromide (FAPbBr 3 ) hybrid perovskites. Through the dielectric quantum well (DQW) engineering, the quantum-confined 2D FAPbBr 3 perovskites exhibit a high exciton binding energy of 162 meV, resulting in a high photoluminescence quantum yield (PLQY) of ∼92% in the spin-coated films. Our optimized LED devices show a maximum current efficiency (η CE ) of 13.02 cd A -1 and the CIE 1931 color coordinates of (0.168, 0.773). The color gamut covers 97% and 99% of the Rec. 2020 standard in the CIE 1931 and the CIE 1976 color space, respectively, representing the "greenest" LEDs ever reported. Moreover, the device shows only a ∼10% roll-off in η CE (11.3 cd A -1 ) at 1000 cd m -2 . We further demonstrate large-area (3 cm 2 ) and ultraflexible (bending radius of 2 mm) LEDs based on 2D perovskites.

Whole high-quality light environment for humans and plants

NASA Astrophysics Data System (ADS)

Sharakshane, Anton

2017-11-01

Plants sharing a single light environment on a spaceship with a human being and bearing a decorative function should look as natural and attractive as possible. And consequently they can be illuminated only with white light with a high color rendering index. Can lighting optimized for a human eye be effective and appropriate for plants? Spectrum-based effects have been compared under artificial lighting of plants by high-pressure sodium lamps and general-purpose white LEDs. It has been shown that for the survey sample phytochrome photo-equilibria does not depend significantly on the parameters of white LED light, while the share of phytoactive blue light grows significantly as the color temperature increases. It has been revealed that yield photon flux is proportional to luminous efficacy and increases as the color temperature decreases, general color rendering index Ra and the special color rendering index R14 (green leaf) increase. General-purpose white LED lamps with a color temperature of 2700 K, Ra > 90 and luminous efficacy of 100 lm/W are as efficient as the best high-pressure sodium lamps, and at a higher luminous efficacy their yield photon flux per joule is even bigger in proportion. Here we show that demand for high color rendering white LED light is not contradictory to the agro-technical objectives.

Evaluation of Metal Halide, Plasma, and LED Lighting Technologies for a Hydrogen Fuel Cell Mobile Light (H 2 LT)

DOE PAGES

Miller, L. B.; Donohoe, S. P.; Jones, M. H.; ...

2015-04-22

This article reports on the testing and comparison of a prototype hydrogen fuel cell light tower (H2LT) and a conventional diesel-powered metal halide light trailer for use in road maintenance and construction activities. The prototype was originally outfitted with plasma lights and then with light-emitting diode (LED) luminaires. Light output and distribution, lighting energy efficiency (i.e., efficacy), power source thermal efficiency, and fuel costs are compared. The metal halide luminaires have 2.2 and 3.1 times more light output than the plasma and LED luminaires, respectively, but they require more power/lumen to provide that output. The LED luminaires have 1.6 timesmore » better light efficacy than either the metal halide or plasma luminaires. The light uniformity ratios produced by the plasma and LED towers are acceptable. The fuel cell thermal efficiency at the power required to operate the plasma lights is 48%, significantly higher than the diesel generator efficiency of 23% when operating the metal halide lights. Due to the increased efficiency of the fuel cell and the LED lighting, the fuel cost per lumen-hour of the H2LT is 62% of the metal halide diesel light tower assuming a kilogram of hydrogen is twice the cost of a gallon of diesel fuel.« less

Efficient Blue Electroluminescence Using Quantum-Confined Two-Dimensional Perovskites.

PubMed

Kumar, Sudhir; Jagielski, Jakub; Yakunin, Sergii; Rice, Peter; Chiu, Yu-Cheng; Wang, Mingchao; Nedelcu, Georgian; Kim, Yeongin; Lin, Shangchao; Santos, Elton J G; Kovalenko, Maksym V; Shih, Chih-Jen

2016-10-03

Solution-processed hybrid organic-inorganic lead halide perovskites are emerging as one of the most promising candidates for low-cost light-emitting diodes (LEDs). However, due to a small exciton binding energy, it is not yet possible to achieve an efficient electroluminescence within the blue wavelength region at room temperature, as is necessary for full-spectrum light sources. Here, we demonstrate efficient blue LEDs based on the colloidal, quantum-confined 2D perovskites, with precisely controlled stacking down to one-unit-cell thickness (n = 1). A variety of low-k organic host compounds are used to disperse the 2D perovskites, effectively creating a matrix of the dielectric quantum wells, which significantly boosts the exciton binding energy by the dielectric confinement effect. Through the Förster resonance energy transfer, the excitons down-convert and recombine radiatively in the 2D perovskites. We report room-temperature pure green (n = 7-10), sky blue (n = 5), pure blue (n = 3), and deep blue (n = 1) electroluminescence, with record-high external quantum efficiencies in the green-to-blue wavelength region.

Enhanced light extraction from a GaN-based green light-emitting diode with hemicylindrical linear grating structure.

PubMed

Jin, Yuanhao; Yang, Fenglei; Li, Qunqing; Zhu, Zhendong; Zhu, Jun; Fan, Shoushan

2012-07-02

Significant enhancement in the light output from GaN-based green light-emitting diodes (LEDs) was achieved with a hemicylindrical grating structure on the top layer of the diodes. The grating structure was first optimized by the finite-difference time-domain (FDTD) method, which showed that the profile of the grating structure was critical for light extraction efficiency. It was found that the transmission efficiency of the 530 nm light emitted from the inside of the GaN LED increased for incidence angles between 23.58° and 60°. Such a structure was fabricated by electron-beam lithography and an etching method. The light output power from the LED was increased approximately 4.7 times compared with that from a conventional LED. The structure optimization is the key to the great increase in transmission efficiency. Furthermore, the light emitted from the edge of the LED units could be collected and extracted by the grating structures in adjacent LED units, thus enhancing the performance of the whole LED chip.

Methyl N-phenyl carbamate synthesis from aniline and methyl formate: carbon recycling to chemical products.

PubMed

Yalfani, Mohammad S; Lolli, Giulio; Müller, Thomas E; Wolf, Aurel; Mleczko, Leslaw

2015-02-01

Methyl N-phenyl carbamate was synthesized from aniline by using methyl formate as a green and efficient carbonylating agent. High yields were obtained at milder reaction conditions compared to the conventional CO/CH3 OH route. Studies on the reaction sequence led to suggest an alternative and more efficient route to the carbamate via formanilide as intermediate. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical design of an in vivo laparoscopic lighting system

NASA Astrophysics Data System (ADS)

Liu, Xiaolong; Abdolmalaki, Reza Yazdanpanah; Mancini, Gregory J.; Tan, Jindong

2017-12-01

This paper proposes an in vivo laparoscopic lighting system design to address the illumination issues, namely poor lighting uniformity and low optical efficiency, existing in the state-of-the-art in vivo laparoscopic cameras. The transformable design of the laparoscopic lighting system is capable of carrying purposefully designed freeform optical lenses for achieving lighting performance with high illuminance uniformity and high optical efficiency in a desired target region. To design freeform optical lenses for extended light sources such as LEDs with Lambertian light intensity distributions, we present an effective and complete freeform optical design method. The procedures include (1) ray map computation by numerically solving a standard Monge-Ampere equation; (2) initial freeform optical surface construction by using Snell's law and a lens volume restriction; (3) correction of surface normal vectors due to accumulated errors from the initially constructed surfaces; and (4) feedback modification of the solution to deal with degraded illuminance uniformity caused by the extended sizes of the LEDs. We employed an optical design software package to evaluate the performance of our laparoscopic lighting system design. The simulation results show that our design achieves greater than 95% illuminance uniformity and greater than 89% optical efficiency (considering Fresnel losses) for illuminating the target surgical region.

Influence of polymeric electron injection layers on the electrical properties of solution-processed multilayered polymer light-emitting diodes

NASA Astrophysics Data System (ADS)

Itoh, Eiji; Kurami, Kazuhiko

2016-02-01

In this study, we fabricated multilayered polymer-based light-emitting diodes (pLEDs) with various solution-processed electron-injection layers (EILs), and investigated the influence of the EILs on the electrical properties of pLEDs in indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonic acid) (PEDOT:PSS)/poly[(9,9-dioctylfluorene-alt-(1,4-phenylene((4-sec-butylphenyl)amino)-1,4-phenylene))] (TFB) (HTL)/poly(9,9-dioctylfluorene-alt-1,4-benzothiadiazole) (F8BT) (EML)/EIL/Al structures. We have used the quaternized ammonium π-conjugated polyelectrolyte derivative (poly[(9,9-di(3,3‧-N,N‧-trimethylammonium)propylfluorenyl-2,7-diyl)-co-(1,4-phenylene)]diiodide salt) (PF-PDTA), a mixture of PF-PDTA and CS2CO3, and the aliphatic-amine-based polymer poly(ethylene imine) (PEI) as solution-processed EILs, and compared them with LiF as a solvent-free EIL. The EILs enhanced the electron injection and improve the pLED performance. High external quantum efficiencies of nearly 4% were obtained in the pLEDs with the combination of a multilayered structure fabricated by a transfer printing technique and EILs of a PF-PDTA:CS2CO3 mixture and PEI. On the other hand, the device with PF-PDTA exhibited lower efficiency, higher driving voltage, and larger leakage current at lower voltage. The migration of ionic charges was suggested from the abnormal dielectric behaviors, and serious damage on the electrode material occurred when both an acid hole-injection layer (PEDOT:PSS) and PF-PDTA were used. On the other hand, the pLEDs with ultrathin PEI showed high performance and stable device operation in terms of the influence of ionic charges.

LED Provides Effective and Efficient Parking Area Lighting at the NAVFAC Engineering Service Center

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2010-08-12

U.S. Department of Energy (DOE) Federal Energy Management Program (FEMP) emerging technology case study showcasing LED lighting to improve energy efficiency in parking areas at the NAVFAC Engineering Services Center.

Development of the electric vehicle analyzer

NASA Astrophysics Data System (ADS)

Dickey, Michael R.; Klucz, Raymond S.; Ennix, Kimberly A.; Matuszak, Leo M.

1990-06-01

The increasing technological maturity of high power (greater than 20 kW) electric propulsion devices has led to renewed interest in their use as a means of efficiently transferring payloads between earth orbits. Several systems and architecture studies have identified the potential cost benefits of high performance Electric Orbital Transfer Vehicles (EOTVs). These studies led to the initiation of the Electric Insertion Transfer Experiment (ELITE) in 1988. Managed by the Astronautics Laboratory, ELITE is a flight experiment designed to sufficiently demonstrate key technologies and options to pave the way for the full-scale development of an operational EOTV. An important consideration in the development of the ELITE program is the capability of available analytical tools to simulate the orbital mechanics of a low thrust, electric propulsion transfer vehicle. These tools are necessary not only for ELITE mission planning exercises but also for continued, efficient, accurate evaluation of DoD space transportation architectures which include EOTVs. This paper presents such a tool: the Electric Vehicle Analyzer (EVA).

Efficient high-throughput biological process characterization: Definitive screening design with the ambr250 bioreactor system.

PubMed

Tai, Mitchell; Ly, Amanda; Leung, Inne; Nayar, Gautam

2015-01-01

The burgeoning pipeline for new biologic drugs has increased the need for high-throughput process characterization to efficiently use process development resources. Breakthroughs in highly automated and parallelized upstream process development have led to technologies such as the 250-mL automated mini bioreactor (ambr250™) system. Furthermore, developments in modern design of experiments (DoE) have promoted the use of definitive screening design (DSD) as an efficient method to combine factor screening and characterization. Here we utilize the 24-bioreactor ambr250™ system with 10-factor DSD to demonstrate a systematic experimental workflow to efficiently characterize an Escherichia coli (E. coli) fermentation process for recombinant protein production. The generated process model is further validated by laboratory-scale experiments and shows how the strategy is useful for quality by design (QbD) approaches to control strategies for late-stage characterization. © 2015 American Institute of Chemical Engineers.

Emission enhancement of light-emitting diode by localized surface plasmon induced by Ag/p-GaN double grating

NASA Astrophysics Data System (ADS)

Xie, Ruijie; Li, Zhiquan; Li, Xin; Gu, Erdan; Niu, Liyong; Sha, Xiaopeng

2018-07-01

In this paper, a new type of light-emitting diodes (LEDs) structure is designed to enhance the light emission efficiency of GaN-based LEDs. The structure mainly includes Ag grating, ITO layer and p-GaN grating. The principle of stimulating the localized surface plasmon to improve the luminous characteristics of the LED by using this structure is discussed. Based on the COMSOL software, the finite element method is used to simulate the LED structure. The normalized radiated powers, the normalized absorbed powers under different wavelength and geometric parameters, and the distribution of the electric field with the particular geometric parameters are obtained. The simulation results show that with a local ITO thickness of 32 nm, an etching depth of 29 nm, a grating period of 510 nm and a duty ratio of 0.5, the emission intensity of the designed GaN-based LED structure has increased by nearly 55 times than the ordinary LED providing a reliable foundation for the development of high-performance GaN-based LEDs.

DEVELOPMENT, DESIGN AND CONSUMER TESTING OF MARKETABLE RESIDENTIAL LED LIGHT LUMINAIRES

EPA Science Inventory

Developing marketable LED luminaires poses challenges, even though LEDs are energy-efficient and an ecological alternative to conventionally lighting. Challenges include: perceptions that the color rendition of LEDs is unacceptable to the public; numbers of LEDs must be grou...

Penrose photoproduction processes - A high efficiency energy mechanism for active galactic nuclei and quasars

NASA Technical Reports Server (NTRS)

Leiter, D.; Kafatos, M.

1979-01-01

Recent observations of NGC 4151 and 3C273 suggest that the nuclei of active galaxies have very high gamma ray efficiencies. In addition, optical studies of M87 have indicated the possibility of a massive black hole in its central region. The above facts have led to study of a new physical mechanism, Penrose Photoproduction Processes, in the ergospheres of massive Kerr black holes, as a way to account for the fluctuating, high efficiency, energy production associated with active galaxies and quasars. Observational signatures, associated with this mechanism, occur in the form of approximately 2 MeV and approximately 2 GeV gamma ray cutoffs which might be corroborated by the observed spectra of NGC 4151 and 3C273, respectively.

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes.

PubMed

Li, Luping; Zhang, Yonghui; Xu, Shu; Bi, Wengang; Zhang, Zi-Hui; Kuo, Hao-Chung

2017-10-24

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

PubMed Central

Li, Luping; Zhang, Yonghui; Kuo, Hao-Chung

2017-01-01

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs. PMID:29073738

Design of the control system for full-color LED display based on MSP430 MCU

NASA Astrophysics Data System (ADS)

Li, Xue; Xu, Hui-juan; Qin, Ling-ling; Zheng, Long-jiang

2013-08-01

The LED display incorporate the micro electronic technique, computer technology and information processing as a whole, it becomes the most preponderant of a new generation of display media with the advantages of bright in color, high dynamic range, high brightness and long operating life, etc. The LED display has been widely used in the bank, securities trading, highway signs, airport and advertising, etc. According to the display color, the LED display screen is divided into monochrome screen, double color display and full color display. With the diversification of the LED display's color and the ceaseless rise of the display demands, the LED display's drive circuit and control technology also get the corresponding progress and development. The earliest monochrome screen just displaying Chinese characters, simple character or digital, so the requirements of the controller are relatively low. With the widely used of the double color LED display, the performance of its controller will also increase. In recent years, the full color LED display with three primary colors of red, green, blue and grayscale display effect has been highly attention with its rich and colorful display effect. Every true color pixel includes three son pixels of red, green, blue, using the space colour mixture to realize the multicolor. The dynamic scanning control system of LED full-color display is designed based on MSP430 microcontroller technology of the low power consumption. The gray control technology of this system used the new method of pulse width modulation (PWM) and 19 games show principle are combining. This method in meet 256 level grayscale display conditions, improves the efficiency of the LED light device, and enhances the administrative levels feels of the image. Drive circuit used 1/8 scanning constant current drive mode, and make full use of the single chip microcomputer I/O mouth resources to complete the control. The system supports text, pictures display of 256 grayscale full-color LED screen.

Integration of organic LEDs with inorganic LEDs for a hybrid lighting system

NASA Astrophysics Data System (ADS)

Kong, H. J.; Park, J. W.; Kim, Y. M.

2013-01-01

We demonstrate that a surface-emitting hybrid light source can be realized by a combination of organic and inorganic light-emitting devices (LEDs). To this end, a blue inorganic LED bar is deployed at one side of a transparent light guide plate (LGP), and a yellow organic LED (OLED) is in contact with the rear surface of the LGP. In such a configuration, it is found that the overall luminance is almost equivalent to the sum of the luminances measured from each light source, and the overall luminance uniformity is determined mainly by the luminance uniformity of the OLED panel at high luminances. We have achieved a white color showing the Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (x = 0.34, y = 0.33), the power efficiency of 9.3 lm/W, the luminance uniformity of 63% at the luminance of 3100 cd m-2, the color rendering index as high as 89.3, and the correlated color temperature finely tunable within the range between 3000 and 8000 K. Such a system facilitates color tuning by adjusting their luminous intensities and hence the implementation of the emotional lighting system.

Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling

DOE Office of Scientific and Technical Information (OSTI.GOV)

David, Aurelien, E-mail: adavid@soraa.com; Hurni, Christophe A.; Young, Nathan G.

The current-voltage characteristic and ideality factor of III-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperature, these electrical properties exhibit a simple behavior. A model in which only active-region recombinations have a contribution to the LED current is found to account for experimental results. The limit of LED electrical efficiency is discussed based on the model and on thermodynamic arguments, and implications for electroluminescent cooling are examined.

Energy efficient LED layout optimization for near-uniform illumination

NASA Astrophysics Data System (ADS)

Ali, Ramy E.; Elgala, Hany

2016-09-01

In this paper, we consider the problem of designing energy efficient light emitting diodes (LEDs) layout while satisfying the illumination constraints. Towards this objective, we present a simple approach to the illumination design problem based on the concept of the virtual LED. We formulate a constrained optimization problem for minimizing the power consumption while maintaining a near-uniform illumination throughout the room. By solving the resulting constrained linear program, we obtain the number of required LEDs and the optimal output luminous intensities that achieve the desired illumination constraints.

Optical properties of wide gap semiconductors studied by means of cathodoluminescence

NASA Astrophysics Data System (ADS)

Fischer Ponce, Alec Mirco

III-nitride semiconductors have been found to be a suitable material for the fabrication of light-emitting diodes (LEDs) emitting in the visible and ultraviolet range through the use of indium gallium nitride (InGaN) active layers. Yet, achieving high-efficient and long lasting LEDs in the long wavelength range, especially in the green spectral region, is limited by difficulties of growth of InGaN layers with high indium content. Additionally, device efficiency is strongly dependent on the formation of low-resistive p-type gallium nitride (GaN)-based layers. In this dissertation, the optical properties of wide gap semiconductor are analyzed using cathodoluminescence imaging and spectroscopy, and time-resolved spectroscopic techniques. A transition at 3.2 eV in magnesium (Mg)-doped GaN has been revealed and it has been identified as a Mg-related donor-acceptor pair, which may be responsible for the increase in intensity with increasing magnesium concentration in the commonly observed donor-acceptor pair region. In a separate study, a decrease of the Mg acceptor energy level and the bulk resistivity in Mg-doped InGaN with increasing indium composition is observed, implying that InGaN p-layers should improve the device performance. Next, Mg-doped GaN and InGaN capping layers in LED structures grown under different ambient gases are shown to alter the quantum well (QW) luminescence. QWs grown with InGaN p-layers exhibit an improvement in the luminescence efficiency and a blue-shift due to reduction of the compressive misfit strain in the QWs. However, p-GaN layers grown under hydrogen ambient gas present a blue-shift of the QW emission. Hydrogen diffusion occurring after thermal annealing of the p-GaN layer may explain the reduction of piezoelectric field effects in polar InGaN quantum wells. In another study, InGaN QWs with high indium content grown in non-polar m-plane GaN were found to exhibit stacking faults originating at the first QW, relaxing the misfit strain in the subsequent layers. Finally, the optical and structural properties of highly luminescent zinc oxide (ZnO) tetrapod powders emitting in the visible green spectral range were studied with high spatial resolution. ZnO nanostructures are strong candidates for devices emitting light with very high efficiencies.

Hybrid daylight/light-emitting diode illumination system for indoor lighting.

PubMed

Ge, Aiming; Qiu, Peng; Cai, Jinlin; Wang, Wei; Wang, Junwei

2014-03-20

A hybrid illumination method using both daylight and light-emitting diodes (LEDs) for indoor lighting is presented in this study. The daylight can be introduced into the indoor space by a panel-integration system. The daylight part and LEDs are combined within a specific luminaire that can provide uniform illumination. The LEDs can be turned on and dimmed through closed-loop control when the daylight illuminance is inadequate. We simulated the illumination and calculated the indoor lighting efficiency of our hybrid daylight and LED lighting system, and compared this with that of LED and fluorescent lighting systems. Simulation results show that the efficiency of the hybrid daylight/LED illumination method is better than that of LED and traditional lighting systems, under the same lighting conditions and lighting time; the method has hybrid lighting average energy savings of T5 66.28%, and that of the LEDs is 41.62%.

Cyclodextrin-enhanced extraction and energy transfer of carcinogens in complex oil environments.

PubMed

Serio, Nicole; Chanthalyma, Chitapom; Prignano, Lindsey; Levine, Mindy

2013-11-27

Reported herein is the use of γ-cyclodextrin for two tandem functions: (a) the extraction of carcinogenic polycyclic aromatic hydrocarbons (PAHs) from oil samples into aqueous solution and (b) the promotion of highly efficient energy transfer from the newly extracted PAHs to a high-quantum-yield fluorophore. The extraction proceeded in moderate to good efficiencies, and the resulting cyclodextrin-promoted energy transfer led to a new, brightly fluorescent signal in aqueous solution. The resulting dual-function system (extraction followed by energy transfer) has significant relevance in the environmental detection and cleanup of oil-spill-related carcinogens.

Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

NASA Astrophysics Data System (ADS)

Titkov, Ilya E.; Yadav, Amit; Zerova, Vera L.; Zulonas, Modestas; Tsatsulnikov, Andrey F.; Lundin, Wsevolod V.; Sakharov, Alexey V.; Rafailov, Edik U.

2014-03-01

Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, L. B.; Donohoe, S. P.; Jones, M. H.

This article reports on the testing and comparison of a prototype hydrogen fuel cell light tower (H2LT) and a conventional diesel-powered metal halide light trailer for use in road maintenance and construction activities. The prototype was originally outfitted with plasma lights and then with light-emitting diode (LED) luminaires. Light output and distribution, lighting energy efficiency (i.e., efficacy), power source thermal efficiency, and fuel costs are compared. The metal halide luminaires have 2.2 and 3.1 times more light output than the plasma and LED luminaires, respectively, but they require more power/lumen to provide that output. The LED luminaires have 1.6 timesmore » better light efficacy than either the metal halide or plasma luminaires. The light uniformity ratios produced by the plasma and LED towers are acceptable. The fuel cell thermal efficiency at the power required to operate the plasma lights is 48%, significantly higher than the diesel generator efficiency of 23% when operating the metal halide lights. Due to the increased efficiency of the fuel cell and the LED lighting, the fuel cost per lumen-hour of the H2LT is 62% of the metal halide diesel light tower assuming a kilogram of hydrogen is twice the cost of a gallon of diesel fuel.« less

LED--panacea or marketing hype?

PubMed

Baillie, Jonathan

2012-02-01

With energy efficiency and carbon reduction, and the importance of a relaxing, therapeutic patient environment, ever more in the spotlight, LED lighting's proponents claim the technology offers healthcare estates personnel many of the answers on both fronts. However some observers believe its benefits are being over-sold, often to the detriment of other high-performing types of more 'conventional lighting', and to a sometimes uninitiated audience too easily swayed by slick sales patter. HEJ editor Jonathan Baillie spoke to one highly experienced lighting professional, Nicholas Bukorović, a former employee of Thorn, Cooper, and Thorlux Lighting, and the principal author of the last CIBSE/Society of Light and Lighting (SLL) Guide LG2 on healthcare lighting, to seek some expert illumination.

Enhanced Reciprocal Interactions between Molecular Stresses and Optoelectronic Energy Transfers for High Efficiency Long Life Devices Based on Conjugated Polymers

DTIC Science & Technology

2014-10-15

led to lower PL efficiencies. The latter, however, posed no problems for solar cells aplications . Furthermore, the molecular dipoles composed of...illuminated under the light of the energy falling in the absorption range of the conjugated polymer, the polymer chain mobility decreased...the other hand, increased concomitantly (Figs. 33, 35). The driving force for the molecular flows is the diffusion of the mobile PS chains toward

Plant experiments with light-emitting diode module in Svet space greenhouse

NASA Astrophysics Data System (ADS)

Ilieva, Iliana; Ivanova, Tania; Naydenov, Yordan; Dandolov, Ivan; Stefanov, Detelin

2010-10-01

Light is necessary for photosynthesis and shoot orientation in the space plant growth facilities. Light modules (LM) must provide sufficient photosynthetic photon flux for optimal efficiency of photosynthetic processes and also meet the constraints for power, volume and mass. A new LM for Svet space greenhouse using Cree® XLamp® 7090 XR light-emitting diodes (LEDs) was developed. Monochromic LEDs emitting in the red, green, and blue regions of the spectrum were used. The LED-LM contains 36 LED spots - 30 LED spots with one red, green and blue LED and 6 LED spots with three red LEDs. Digital Multiplex Control Unit controls the LED spots and can set 231 levels of light intensity thus achieving Photosynthetic Photon Flux Density (PPFD) in the range 0-400 μmol m -2 s -1 and different percentages of the red, green and blue light, depending on the experimental objectives. Two one-month experiments with plants - lettuce and radicchio were carried out at 400 μmol m -2 s -1 PPFD (high light - HL) and 220 μmol m -2 s -1 PPFD (low light - LL) and 70% red, 20% green and 10% blue light composition. To evaluate the efficiency of photosynthesis, in vivo modulated chlorophyll fluorescence was measured by Pulse Amplitude Modulation (PAM) fluorometer on leaf discs and the following parameters: effective quantum yield of Photosystem II ( ΦPSII) and non-photochemical quenching (NPQ) were calculated. Both lettuce and radicchio plants grown at LL express higher photochemical activity of Photosystem II (PSII) than HL grown plants, evaluated by ΦPSII. Accelerated rise in NPQ in both LL grown plants was observed, while steady state NPQ values were higher in LL grown lettuce plants and did not differ in LL and HL grown radicchio plants. The extent of photoinhibition process in both plants was evaluated by changes in malonedialdehyde (MDA) concentration, peroxidase (POX) activity and hydrogen peroxide (H 2O 2) content. Accumulation of high levels of MDA and increased POX activity correlating with decreased H 2O 2 content were observed in both HL grown plants. These biochemical indicators revealed higher sensitivity to photodamage in HL grown lettuce and radicchio plants. LL conditions resulted in more effective functioning of PSII than HL when lettuce and radicchio plants were grown at 70% red, 20% green and 10% blue light composition.

Evaluation of inorganic and organic light-emitting diode displays for signage application

NASA Astrophysics Data System (ADS)

Sharma, Pratibha; Kwok, Harry

2006-08-01

High-brightness, inorganic light-emitting diodes (LEDs) have been successfully utilized for edge-lighting of large displays for signage. Further interest in solid-state lighting technology has been fueled with the emergence of small molecule and polymer-based organic light-emitting diodes (OLEDs). In this paper, edgelit inorganic LED-based displays and state-of-the-art OLED-based displays are evaluated on the basis of electrical and photometric measurements. The reference size for a signage system is assumed to be 600 mm x 600mm based on the industrial usage. With the availability of high power light-emitting diodes, it is possible to develop edgelit signage systems of the standard size. These displays possess an efficacy of 18 lm/W. Although, these displays are environmentally friendly and efficient, they suffer from some inherent limitations. Homogeneity of displays, which is a prime requirement for illuminated signs, is not accomplished. A standard deviation of 3.12 lux is observed between the illuminance values on the surface of the display. In order to distribute light effectively, reflective gratings are employed. Reflective gratings aid in reducing the problem but fail to eliminate it. In addition, the overall cost of signage is increased by 50% with the use of these additional components. This problem can be overcome by the use of a distributed source of light. Hence, the organic-LEDs are considered as a possible contender. In this paper, we experimentally determine the feasibility of using OLEDs for signage applications and compare their performance with inorganic LEDs. Passive matrix, small-molecule based, commercially available OLEDs is used. Design techniques for implementation of displays using organic LEDs are also discussed. It is determined that tiled displays based on organic LEDs possess better uniformity than the inorganic LED-based displays. However, the currently available OLEDs have lower light-conversion efficiency and higher costs than the conventional, inorganic LEDs. But, signage panels based on OLEDs can be made cheaper by avoiding the use of acrylic sheet and reflective gratings. Moreover, the distributed light output and light weight of OLEDs and the potential to be built inexpensively on flexible substrates can make OLEDs more beneficial for future signage applications than the inorganic LEDs.

Modern process designs for very high NGL recovery

DOE Office of Scientific and Technical Information (OSTI.GOV)

Finn, A.J.; Tomlinson, T.R.; Johnson, G.L.

1999-07-01

Typical margins between NGL and sales gas can justify consideration of very high NGL recovery from natural gas but traditionally, very high percentage recovery of propane or ethane has led to disproportionally high incremental power consumption and hence expensive compressors. Recent technical advances in the process design of cryogenic gas processing plants and in the equipment they se have led to a new breed of flowsheets that can cost-effectively give propane recoveries of as high as 99%. The high NGL recovery achievable with modern plants is economically possible due to their high thermodynamic efficiency. This is mainly because they usemore » the refrigeration available from the process more effectively and so recover more NGL. A high pressure rectification step can further improve NGL recovery economically, especially on larger plants. This residual NGL content would normally remain in the sales gas on a conventional turboexpander plant. Improved recovery of NGL can be obtained with little or no increase in sales gas compression power compared to conventional plants by judicious use of heat exchanger area. With high feed gas pressure and particularly with dense phase operation, the use of two expanders in series for feed gas let-down gives good process efficiency and relatively low specific power per ton of NGL recovered. Use of two expanders also avoids excessive liquid flows in the expander exhaust, thus improving the performance and reliability of the turboexpander system. The techniques discussed in the paper can be employed on revamps to improve NGL recovery. Improved process performance relies heavily on the use of efficient, multistream plant-fin exchangers and these can be easily added to an existing facility to increase NGL production.« less

Application of the light emitting diodes (LEDs) in optical measurements

NASA Astrophysics Data System (ADS)

Sabinin, Vladimir E.; Savelyev, Sergey K.; Solk, Sergey V.

2003-06-01

At current moment the Light Emitting Diodes (LED) have found a great amount of applications in different areas -- for location and communication systems, optical information systems, in architecture light decoration and advertising, traffic signals, etc. In current work we are making attempt to analyze some new possible fields of LED application. Among these may be build in systems of photometry control. Many different optic and optoelectronic systems are in need of such devices, able to operate for a long time in an autonomous regime. LED's and especially optocouples on their base can provide required time stability and spectral characteristics. The main drawback of such elements is the particularity of the emission diagram. In many case it has unpredictable form, but high reliability and very simple design may compensate many of LED's drawbacks. Below are analyzed the optical schemes enabling transformation of the semiconductor crystal in visible and IR ranges into the beams with angular divergence of 2 degrees. From one crystal, having diameter less than 1 mm was gained the axial light power exceeding 1000 cd and it is possible to form the light sources providing light power up to 50 - 100 W/str. If to take into account that LED have narrow spectral band and high stability of this spectral band, their small dimensions, rather high efficiency, a possibility of intensity modulation by supply current it is very promising to apply these devices for system of buid in control. Such possibility was not realized in full up till now.

An overview of LED applications for general illumination

NASA Astrophysics Data System (ADS)

Pelka, David G.; Patel, Kavita

2003-11-01

This paper begins by reviewing the current state of development of LEDs, their existing markets as well as their potential for energy conservation and their potential for gaining market share in the general illumination market. It discusses LED metrics such as chip size, lumens per watt, thermal resistance, and the recommended maximum current rating. The paper then goes on to consider the importance of non-imaging optics for both optically efficient and extremely compact LED lighting systems. Finally, microstructures useful for controlling the fields-of-view of LED lighting systems are considered and described in some detail. An extremely efficient and cost effective microstructure, called kinoform diffusers, is shown to have very unique properties that make this technology almost ideal for shaping the output beams of LED lighting systems. It concludes by illustrating some general illumination LED lighting systems

Head-mounted LED for optogenetic experiments of freely-behaving animal

NASA Astrophysics Data System (ADS)

Kwon, Ki Yong; Gnade, Andrew G.; Rush, Alexander D.; Patten, Craig D.

2016-03-01

Recent developments in optogenetics have demonstrated the ability to target specific types of neurons with sub-millisecond temporal precision via direct optical stimulation of genetically modified neurons in the brain. In most applications, the beam of a laser is coupled to an optical fiber, which guides and delivers the optical power to the region of interest. Light emitting diodes (LEDs) are an alternative light source for optogenetics and they provide many advantages over a laser based system including cost, size, illumination stability, and fast modulation. Their compact size and low power consumption make LEDs suitable light sources for a wireless optogenetic stimulation system. However, the coupling efficiency of an LED's output light into an optical fiber is lower than a laser due to its noncollimated output light. In typical chronic optogenetic experiment, the output of the light source is transmitted to the brain through a patch cable and a fiber stub implant, and this configuration requires two fiber-to-fiber couplings. Attenuation within the patch cable is potential source of optical power loss. In this study, we report and characterize a recently developed light delivery method for freely-behaving animal experiments. We have developed a head-mounted light source that maximizes the coupling efficiency of an LED light source by eliminating the need for a fiber optic cable. This miniaturized LED is designed to couple directly to the fiber stub implant. Depending on the desired optical power output, the head-mounted LED can be controlled by either a tethered (high power) or battery-powered wireless (moderate power) controller. In the tethered system, the LED is controlled through 40 gauge micro coaxial cable which is thinner, more flexible, and more durable than a fiber optic cable. The battery-powered wireless system uses either infrared or radio frequency transmission to achieve real-time control. Optical, electrical, mechanical, and thermal characteristics of the head-mounted LED were evaluated.

Infrared LED Enhanced Spectroscopic CdZnTe Detector Working under High Fluxes of X-rays

PubMed Central

Pekárek, Jakub; Dědič, Václav; Franc, Jan; Belas, Eduard; Rejhon, Martin; Moravec, Pavel; Touš, Jan; Voltr, Josef

2016-01-01

This paper describes an application of infrared light-induced de-polarization applied on a polarized CdZnTe detector working under high radiation fluxes. We newly demonstrate the influence of a high flux of X-rays and simultaneous 1200-nm LED illumination on the spectroscopic properties of a CdZnTe detector. CdZnTe detectors operating under high radiation fluxes usually suffer from the polarization effect, which occurs due to a screening of the internal electric field by a positive space charge caused by photogenerated holes trapped at a deep level. Polarization results in the degradation of detector charge collection efficiency. We studied the spectroscopic behavior of CdZnTe under various X-ray fluxes ranging between 5×105 and 8×106 photons per mm2 per second. It was observed that polarization occurs at an X-ray flux higher than 3×106 mm−2·s−1. Using simultaneous illumination of the detector by a de-polarizing LED at 1200 nm, it was possible to recover X-ray spectra originally deformed by the polarization effect. PMID:27690024

Implementation of light extraction improvements of GaN-based light-emitting diodes with specific textured sidewalls

NASA Astrophysics Data System (ADS)

Chen, Chun-Yen; Chen, Wei-Cheng; Chang, Ching-Hong; Lee, Yu-Lin; Liu, Wen-Chau

2018-05-01

Textured-sidewall GaN-based light-emitting diodes (LEDs) with various sidewall angles (15-90°) and convex or concave sidewalls prepared using an inductively-coupled-plasma approach are comprehensively fabricated and studied. The device with 45° sidewalls (Device F) and that with convex sidewalls (Device B) show significant improvements in optical properties. Experiments show that, at an injection current of 350 mA, the light output power, external quantum efficiency, wall-plug efficiency, and luminous flux of Device F (Device B) are greatly improved by 18.3% (18.2%), 18.2% (18.2%), 17.3% (19.8%), and 16.6% (18.4%), respectively, compared to those of a conventional LED with flat sidewalls. In addition, negligible degradation in electrical properties is found. The enhanced optical performance is mainly attributed to increased light extraction in the horizontal direction due to a significant reduction in total internal reflection at the textured sidewalls. Therefore, the reported specific textured-sidewall structures (Devices B and F) are promising for high-power GaN-based LED applications.

Laser Based Phosphor Converted Solid State White Light Emitters

NASA Astrophysics Data System (ADS)

Cantore, Michael

Artificial lighting and as a consequence the ability to be productive when the sun does not shine may be a profound achievement in society that is largely taken for granted. As concerns arise due to our dependence on energy sources with finite lifespan or environmentally negative effects, efforts to reduce energy consumption and create clean renewable alternatives has become highly valued. In the scope of artificial lighting, the use of incandescent lamps has shifted to more efficient light sources. Fluorescent lighting made the first big gains in efficiency over incandescent lamps with peak efficiency for mature designs reaching luminous efficacy of approximately 90 lm/W; more than three times as efficient as an incandescent lamp. Lamps based on light emitting diodes (LEDs) which can produce light at even greater efficiency, color quality and without the potential for hazardous chemical release from lamp failure. There is a significant challenge with LED based light sources. Their peak efficiency occurs at low current densities and then droops as the current density increases. Laser diodes (LDs) do not suffer from decreasing efficiency due to increased current. An alternative solid state light source using LDs has potential to make further gains in efficiency as well as allow novel illuminant designs which may be impractical or even impossible even with LED or other conventional sources. While similar to LEDS, the use of LDs does present new challenges largely due to the increased optical power density which must be accommodated in optics and phosphor materials. Single crystal YAG:Ce has been shown to be capable of enduring this more extreme operating environment while retaining the optical and fluorescing qualities desired for use as a wavelength converter in phosphor converted LD based white emitting systems. The incorporation of this single crystal phosphor in a system with a commercial laser diode with peak wall plug efficiency of 31% resulted in emission of white light with a luminous efficacy of 86.7 lm/W at a current of 1.4A. A total luminous flux of 1100 lm with luminous efficacy of 76 lm/W at 3.0 A current was achieved. Simulations have been conducted which show that as the InGaN LD technology matures towards the efficiencies of about 75%, which has been observed in the GaAs material system, luminous efficacy of similar blue LD with single crystal YAG:Ce systems will exceed 200 lm/W.

Constraints on drivers for visible light communications emitters based on energy efficiency.

PubMed

Del Campo-Jimenez, Guillermo; Perez-Jimenez, Rafael; Lopez-Hernandez, Francisco Jose

2016-05-02

In this work we analyze the energy efficiency constraints on drivers for Visible light communication (VLC) emitters. This is the main reason why LED is becoming the main source of illumination. We study the effect of the waveform shape and the modulation techniques on the overall energy efficiency of an LED lamp. For a similar level of illumination, we calculate the emitter energy efficiency ratio η (P_LED/P_TOTAL) for different signals. We compare switched and sinusoidal signals and analyze the effect of both OOK and OFDM modulation techniques depending on the power supply adjustment, level of illumination and signal amplitude distortion. Switched and OOK signals present higher energy efficiency behaviors (0.86≤η≤0.95) than sinusoidal and OFDM signals (0.53≤η≤0.79).

High performance incandescent lighting using a selective emitter and nanophotonic filters

NASA Astrophysics Data System (ADS)

Leroy, Arny; Bhatia, Bikram; Wilke, Kyle; Ilic, Ognjen; Soljačić, Marin; Wang, Evelyn N.

2017-09-01

Previous approaches for improving the efficiency of incandescent light bulbs (ILBs) have relied on tailoring the emitted spectrum using cold-side interference filters that reflect the infrared energy back to the emitter while transmitting the visible light. While this approach has, in theory, potential to surpass light-emitting diodes (LEDs) in terms of luminous efficiency while conserving the excellent color rendering index (CRI) inherent to ILBs, challenges such as low view factor between the emitter and filter, high emitter (>2800 K) and filter temperatures and emitter evaporation have significantly limited the maximum efficiency. In this work, we first analyze the effect of non-idealities in the cold-side filter, the emitter and the view factor on the luminous efficiency. Second, we theoretically and experimentally demonstrate that the loss in efficiency associated with low view factors can be minimized by using a selective emitter (e.g., high emissivity in the visible and low emissivity in the infrared) with a filter. Finally, we discuss the challenges in achieving a high performance and long-lasting incandescent light source including the emitter and filter thermal stability as well as emitter evaporation.

Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okur, Serdal; Nami, Mohsen; Rishinaramangalam, Ashwin K.

Here, the internal quantum efficiencies (IQE) and carrier lifetimes of semipolar (more » $$20\\bar{2}$$$\\bar{1}$$) InGaN/GaN LEDs with different active regions are measured using temperature-dependent, carrier-density-dependent, and time-resolved photoluminescence. Three active regions are investigated: one 12-nm-thick single quantum well (SQW), two 6-nm-thick QWs, and three 4-nm-thick QWs. The IQE is highest for the 12-nm-thick SQW and decreases as the well width decreases. The radiative lifetimes are similar for all structures, while the nonradiative lifetimes decrease as the well width decreases. The superior IQE and longer nonradiative lifetime of the SQW structure suggests using thick SQW active regions for high brightness semipolar ($$20\\bar{2}$$$\\bar{1}$$) LEDs.« less

Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes

DOE PAGES

Okur, Serdal; Nami, Mohsen; Rishinaramangalam, Ashwin K.; ...

2017-01-26

Here, the internal quantum efficiencies (IQE) and carrier lifetimes of semipolar (more » $$20\\bar{2}$$$\\bar{1}$$) InGaN/GaN LEDs with different active regions are measured using temperature-dependent, carrier-density-dependent, and time-resolved photoluminescence. Three active regions are investigated: one 12-nm-thick single quantum well (SQW), two 6-nm-thick QWs, and three 4-nm-thick QWs. The IQE is highest for the 12-nm-thick SQW and decreases as the well width decreases. The radiative lifetimes are similar for all structures, while the nonradiative lifetimes decrease as the well width decreases. The superior IQE and longer nonradiative lifetime of the SQW structure suggests using thick SQW active regions for high brightness semipolar ($$20\\bar{2}$$$\\bar{1}$$) LEDs.« less

Energy efficient engine high pressure turbine ceramic shroud support technology report

NASA Technical Reports Server (NTRS)

Nelson, W. A.; Carlson, R. G.

1982-01-01

This work represents the development and fabrication of ceramic HPT (high pressure turbine) shrouds for the Energy Efficient Engine (E3). Details are presented covering the work performed on the ceramic shroud development task of the NASA/GE Energy Efficient Engine (E3) component development program. The task consists of four phases which led to the selection of a ZrO2-BY2O3 ceramic shroud material system, the development of an automated plasma spray process to produce acceptable shroud structures, the fabrication of select shroud systems for evaluation in laboratory, component, and CF6-50 engine testing, and finally, the successful fabrication of ZrO2-8Y2O3/superpeg, engine quality shrouds for the E3 engine.

LED-based high-speed visible light communications

NASA Astrophysics Data System (ADS)

Chi, Nan; Shi, Meng; Zhao, Yiheng; Wang, Fumin; Shi, Jianyang; Zhou, Yingjun; Lu, Xingyu; Qiao, Liang

2018-01-01

We are seeing a growing use of light emitting diodes (LEDs) in a range of applications including lighting, TV and backlight board screen, display etc. In comparison with the traditional incandescent and fluorescent light bulbs, LEDs offer long life-space, much higher energy efficiency, high performance cost ratio and above all very fast switching capability. LED based Visible Light Communications (VLC) is an emerging field of optical communications that focuses on the part of the electromagnetic spectrum that humans can see. Depending on the transmission distance, we can divide the whole optical network into two categories, long haul and short haul. Visible light communication can be a promising candidate for short haul applications. In this paper, we outline the configuration of VLC, its unique benefits, and describe the state of the art research contributions consisting of advanced modulation formats including adaptive bit loading OFDM, carrierless amplitude and phase (CAP), pulse amplitude modulation (PAM) and single carrier Nyquist, linear equalization and nonlinear distortion mitigation based on machine learning, quasi-balanced coding and phase-shifted Manchester coding. These enabling technologies can support VLC up to 10Gb/s class free space transmission.

Evaluating UV-C LED disinfection performance and investigating potential dual-wavelength synergy.

PubMed

Beck, Sara E; Ryu, Hodon; Boczek, Laura A; Cashdollar, Jennifer L; Jeanis, Kaitlyn M; Rosenblum, James S; Lawal, Oliver R; Linden, Karl G

2017-02-01

A dual-wavelength UV-C LED unit, emitting at peaks of 260 nm, 280 nm, and the combination of 260|280 nm together was evaluated for its inactivation efficacy and energy efficiency at disinfecting Escherichia coli, MS2 coliphage, human adenovirus type 2 (HAdV2), and Bacillus pumilus spores, compared to conventional low-pressure and medium-pressure UV mercury vapor lamps. The dual-wavelength unit was also used to measure potential synergistic effects of multiple wavelengths on bacterial and viral inactivation and DNA and RNA damage. All five UV sources demonstrated similar inactivation of E. coli. For MS2, the 260 nm LED was most effective. For HAdV2 and B. pumilus, the MP UV lamp was most effective. When measuring electrical energy per order of reduction, the LP UV lamp was most efficient for inactivating E. coli and MS2; the LP UV and MP UV mercury lamps were equally efficient for HAdV2 and B. pumilus spores. Among the UV-C LEDs, there was no statistical difference in electrical efficiency for inactivating MS2, HAdV2, and B. pumilus spores. The 260 nm and 260|280 nm LEDs had a statistical energy advantage for E. coli inactivation. For UV-C LEDs to match the electrical efficiency per order of log reduction of conventional LP UV sources, they must reach efficiencies of 25-39% or be improved on by smart reactor design. No dual wavelength synergies were detected for bacterial and viral inactivation nor for DNA and RNA damage. Copyright © 2016 Elsevier Ltd. All rights reserved.

Novel Design of Iridium Phosphors with Pyridinylphosphinate Ligands for High-Efficiency Blue Organic Light-emitting Diodes

PubMed Central

Wu, Zheng-Guang; Jing, Yi-Ming; Lu, Guang-Zhao; Zhou, Jie; Zheng, You-Xuan; Zhou, Liang; Wang, Yi; Pan, Yi

2016-01-01

Due to the high quantum efficiency and wide scope of emission colors, iridium (Ir) (III) complexes have been widely applied as guest materials for OLEDs (organic light-emitting diodes). Contrary to well-developed Ir(III)-based red and green phosphorescent complexes, the efficient blue emitters are rare reported. Like the development of the LED, the absence of efficient and stable blue materials hinders the widely practical application of the OLEDs. Inspired by this, we designed two novel ancillary ligands of phenyl(pyridin-2-yl)phosphinate (ppp) and dipyridinylphosphinate (dpp) for efficient blue phosphorescent iridium complexes (dfppy)2Ir(ppp) and (dfppy)2Ir(dpp) (dfppy = 2-(2,4-difluorophenyl)pyridine) with good electron transport property. The devices using the new iridium phosphors display excellent electroluminescence (EL) performances with a peak current efficiency of 58.78 cd/A, a maximum external quantum efficiency of 28.3%, a peak power efficiency of 52.74 lm/W and negligible efficiency roll-off ratios. The results demonstrated that iridium complexes with pyridinylphosphinate ligands are potential blue phosphorescent materials for OLEDs. PMID:27929124

GRC-2013-C-03877

NASA Image and Video Library

2009-09-26

The Advanced Stirling Convertor (ASC) is being developed by Sunpower, Inc. for NASA's Glenn Research Center (GRC) with critical technology support tasks led by GRC. The goal of the ASC project is to develop a highly efficient, low mass, reliable power convertor for future Radioisotope Power Systems (RPS), NASA's Science Mission Directorate; Stirling Lab

GRC-2013-C-03878

NASA Image and Video Library

2009-09-26

The Advanced Stirling Convertor (ASC) is being developed by Sunpower, Inc. for NASA's Glenn Research Center (GRC) with critical technology support tasks led by GRC. The goal of the ASC project is to develop a highly efficient, low mass, reliable power convertor for future Radioisotope Power Systems (RPS), NASA's Science Mission Directorate; Stirling Lab

GRC-2013-C-03843

NASA Image and Video Library

2009-09-26

The Advanced Stirling Convertor (ASC) is being developed by Sunpower, Inc. for NASA's Glenn Research Center (GRC) with critical technology support tasks led by GRC. The goal of the ASC project is to develop a highly efficient, low mass, reliable power convertor for future Radioisotope Power Systems (RPS), NASA's Science Mission Directorate; Stirling Lab

ZnO-nanorods: A possible white LED phosphor

NASA Astrophysics Data System (ADS)

Sarangi, Sachindra Nath; T., Arun; Ray, Dinseh K.; Sahoo, Pratap Kumar; Nozaki, Shinji; Sugiyama, Noriyuki; Uchida, Kazuo

2017-05-01

The white light-emitting diodes (LEDs) have drawn much attention to replace conventional lighting sources because of low energy consumption, high light efficiency and long lifetime. Although the most common approach to produce white light is to combine a blue LED chip and a yellow phosphor, such a white LED cannot be used for a general lighting application, which requires a broad luminescence spectrum in the visible wavelength range. We have successfully chemically synthesized the ZnO nanorods showing intense broad luminescence in the visible wavelength range and made a white LED using the ZnO nanorods as phosphor excited with a blue LED. Their lengths and diameters were 2 - 10 μm and 200 - 800 nm, respectively. The wurtzite structure was confirmed by the x-ray diffraction measurement. The PL spectrum obtained by exciting the ZnO nanorods with the He-Cd laser has two peaks, one associated with the near band-edge recombination and the other with recombination via defects. The peak intensity of the near band-edge luminescence at 388 nm is much weaker than that of the defect-related luminescence. The latter luminescence peak ranges from 450 to 850 nm and broad enough to be used as a phosphor for a white LED. A white LED has been fabricated using a blue LED with 450 nm emission and ZnO nanorod powders. The LED performances show a white light emission and the electroluminescence measurement shows a stiff increase in white light intensity with increasing blue LED current. The Commission International de1'Eclairage (CIE) chromaticity colour coordinates of 450 nm LED pumped white emission shows a coordinate of (0.31, 0.32) for white LED at 350 mA. These results indicate that ZnO nanorods provides an alternate and effective approach to achieve high-performance white LEDs and also other optoelectronic devices.

Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Goh, E. S. M.; Yang, H. Y.; Han, Z. J.; Chen, T. P.; Ostrikov, K.

2012-12-01

Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes (LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombination in the ZnMgO layer. Furthermore, the emission wavelength is shifted to the green/yellow spectral region by employing an indium-tin-oxide thin film as the dopant source, where thermally activated indium diffusion creates extra deep defect levels for carrier recombination. These results clearly demonstrate the effectiveness of controlled metal incorporation in achieving high energy efficiency and spectral tunability of the n-ZnMgO/p-GaN LED devices.

Ultrasmooth Perovskite Film via Mixed Anti-Solvent Strategy with Improved Efficiency.

PubMed

Yu, Yu; Yang, Songwang; Lei, Lei; Cao, Qipeng; Shao, Jun; Zhang, Sheng; Liu, Yan

2017-02-01

Most antisolvents employed in previous research were miscible with perovskite precursor solution. They always led to fast formation of perovskite even if the intermediate stage existed, which was not beneficial to obtain high quality perovskite films and made the formation process less controllable. In this work, a novel ethyl ether/n-hexane mixed antisolvent (MAS) was used to achieve high nucleation density and slow down the formation process of perovskite, producing films with improved orientation of grains and ultrasmooth surfaces. These high quality films exhibited efficient charge transport at the interface of perovskite/hole transport material and perovskite solar cells based on these films showed greatly improved performance with the best power conversion efficiency of 17.08%. This work also proposed a selection principle of MAS and showed that solvent engineering by designing the mixed antisolvent system can lead to the fabrication of high-performance perovskite solar cells.

Effect of defects on the electrical/optical performance of gallium nitride based junction devices

NASA Astrophysics Data System (ADS)

Ferdous, Mohammad Shahriar

Commercial GaN based electronic and optoelectronic devices possess a high density (107-109 cm-2) of threading dislocations (TDs) because of the large mismatch in the lattice constant and the thermal expansion coefficient between the epitaxial layer structure and the substrate. In spite of these dislocations, high brightness light emitting diodes (LEDs) utilizing InGaN or AlGaN multiple quantum wells (MQWs) and with an external quantum efficiency of more than 40%, have already been achieved. This high external quantum efficiency in the presence of a high density of dislocations has been explained by carrier localization induced by indium fluctuations in the quantum well. TDs have been found to increase the reverse leakage current in InGaN based LEDs and to shorten the operating lifetime of InGaN MQW/GaN/AlGaN laser diodes. Thus it is important that the TD density is further reduced. It remains unclear how the TDs interact with the device to cause the effects mentioned above, hence the careful and precise characterization of threading defects and their effects on the electrical and optical performances of InGaN/GaN MQW LEDs is needed. This investigation will be useful not only from the point of view of device optimization but also to develop a clear understanding of the physical processes associated with TDs and especially with their effect on leakage current. We have employed photoelectrochemical (PEC) etching to accurately measure the dislocation density initially in home-grown GaN-based epitaxial structures and recently in InGaN/GaN MQW LEDs fabricated from commercial grade epitaxial structures that were supplied by our industrial collaborators. Measuring the electrical and electroluminescence (EL) characteristics of these devices has revealed correlations between some aspects of the LED behavior and the TD density, and promises to allow a deeper understanding of the role of threading dislocations to be elucidated. We observed that the LED reverse leakage current increased exponentially, and electroluminescence intensity decreased by 22%, as the TD density in the LEDs increased from 1.7 x 107 cm-2 to 2 x 108 cm-2. Forward voltage remained almost constant with the increase of TD density. A model of carrier conduction via hopping through defect related states, was found to provide an excellent fit to the experimental I-V data and provides a useful basis for understanding carrier conduction in the presence of TDs.

CEEM Final Technical Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bowers, John

The mission of the Center for Energy Efficient Materials (CEEM) was to serve the Department of Energy and the nation as a center of excellence dedicated to advancing basic research in nano-structured materials and devices for applications to solar electricity, thermoelectric conversion of waste heat to electricity, and solidstate lighting. The foundation of CEEM was based on the unique capabilities of UCSB and its partner institutions to control, synthesize, characterize, model, and apply materials at the nanoscale for more efficient sustainable energy resources. This unique expertise was a key source of the synergy that unified the research of the Center.more » Although the Center’s focus was basic research, It’s longer-term objective has been to transfer new materials and devices into the commercial sector where they will have a substantial impact on the nation’s need for efficient sustainable energy resources. As one measure of the impact of the Center, two start-up companies were formed based on its research. In addition, Center participants published a total of 210 archival journal articles, of which 51 were exclusively sponsored by the DOE grant. The work of the Center was structured around four specific tasks: Organic Solar Cells, Solid-State Lighting, Thermoelectrics, and High Efficiency Multi-junction Photovoltaic devices. A brief summary of each follows – detailed descriptions are in Sections 4 & 5 of this report. Research supported through CEEM led to an important shift with respect to the choice of materials used for the fabrication of solution deposited organic solar cells. Solution deposition opens the opportunity to manufacture solar cells via economically-viable high throughput tools, such as roll to roll printing. Prior to CEEM, most organic semiconductors utilized for this purpose involved polymeric materials, which, although they can form thin films reliably, suffer from batch to batch variations due to the statistical nature of the chemical reactions that produce them. In response, the CEEM team developed well-defined molecular semiconductors that produce active layers with very high power conversion efficiencies, in other words they can convert a very high fraction of sunlight into useful electrical power. The fact that the semiconductor is formed from molecular species provides the basis for circumventing the unreliability of polymer counterparts and, as an additional bonus, allows one to attain much grater insight into the structure of the active layer. The latter is particularly important because efficient conversion is the result of a complex arrangement of two semiconductors that need to phase separate in a way akin to oil and water, but with domains that are described by nanoscale dimensions. CEEM was therefore able to provide deep insight into the influence of nanostructure, through the application of structural characterization tools and theoretical methods that describe how electrical charges migrate through the organic layer. Our research in light emitting diode (LED)-based solid state lighting (SSL) was directed at improving efficiency and reducing costs to enable the widespread deployment of economically-viable replacements for inefficient incandescent, halogen, and fluorescent-based lighting. Our specific focus was to advance the fundamental science and technology of light emitting diodes to both understand factors that limit efficiencies and to provide innovative and viable solutions to the current impediments. One of the main challenges we faced is the decrease in efficiency when LEDs are driven harder to increase light output---the so called “droop” effect. It requires large emitting surfaces to reach a desired optical output, and necessitates the use of costly heat sinks, both of which increase the cost. We successfully reduced droop by growing LED crystals having non-conventional orientations. As recognized by the award of the 2014 Nobel prize to the inventors of the nitride LEDs (one of whom was a member of CEEM), LEDs already have a large societal impact in both developed (leading to large energy savings) and developing countries (bringing light where there is no electrical grid). The improvements in efficiency sought after in the CEEM project are key to a further impact of solid state lighting by LEDs with a projected doubling in efficiency by year 2020. Direct generation of electricity from heat has enormous promise for beneficial use of waste heat. But practical power generation directly from heat requires understanding and development of new and improved materials that will be more efficient and rugged than today’s thermoelectric materials. To accomplish this goal CEEM has synthesized five distinct and promising new classes of thermoelectric materials: (a) nanoparticle arrays that are effective in maximizing electric power generation and reducing detrimental loss of heat; (b) nitride and (c) oxide thermal electric materials that are effective at high temperatures where much beneficial heat is available; (d) arrays of silicon nano-wires that integrate thermal electricity generation into silicon-based electronics and materials; and (e) chemically synthesized nanostructured compounds that are cost effective, earth abundant, and environmentally friendly. The further development of these thermoelectric sources of electricity could have revolutionary impact for society in the recovery of waste heat from sources such as power plants and automobile exhaust, where there could be significant associated energy saving. It could even, in the future, provide disruptive alternatives and replacements for today’s internal combustion engines and could enable improved all-electric propulsion by the heat from shipboard nuclear reactors. The High Efficiency Multi-junction Photovoltaics task was a UCSB/NREL collaboration which bonded sub-cells from two different compound semiconductors material systems to make high efficiency multijunction solar cells for concentrating photovoltaic applications thathave substantially higher efficiency than single substrate cells made of elemental semiconductors such as silicon. This task required the development of new cell bonding methods with excellent coupling of both photons and electrons between the sub-cells. To accomplish this, we developed (1) GaInN solar cells with enhanced performance by using quantum-well absorbers and front-surface optical texturing, (2) a hybrid "pillar-array" bond which uses an array of metal pillars for electrical coupling, and (3) a "hybrid moth-eye" optical coating which combines the benefits of nano-imprinted moth-eye coatings and traditional multilayer coatings. The technical effectiveness was assessed by measurement of the photovoltaic efficiency of solar cells made using these techniques; the ultrahigh efficiencies targeted by this work are of compelling economic value for concentrating photovoltaics.« less

Investigating the LED's dark side. Novel LED Model Offers New Insights

DOE PAGES

Chow, Weng Wah

2014-07-01

A revolution in lighting is well on its way. Rewind the clock a year or so and the prices of LED bulbs made many shoppers wince. But now it is possible to get a high-quality 60 W equivalent for well under $10, and that’s allowing sales of LED bulbs incorporating chips from the likes of Cree and Philips Lumileds to take off. Although these solid-state bulbs are much more pricey than incandescents, which have largely disappeared from shelves due to legislation, they more than make up for that additional up-front cost with a substantial trimming of the electricity bill. Itmore » is a more tricky decision, however, whether it makes more sense to buy an LED bulb or a cheaper compact fluorescent (CFL). In terms of durability, adaptability and environmental impact, the solid-state bulb is the clear winner. But both types of light are similar in the efficiency stakes, and thus the running costs.« less

Enhancing UV-emissions through optical and electronic dual-function tuning of Ag nanoparticles hybridized with n-ZnO nanorods/p-GaN heterojunction light-emitting diodes.

PubMed

Yao, Yung-Chi; Yang, Zu-Po; Hwang, Jung-Min; Chuang, Yi-Lun; Lin, Chia-Ching; Haung, Jing-Yu; Chou, Chun-Yang; Sheu, Jinn-Kong; Tsai, Meng-Tsan; Lee, Ya-Ju

2016-02-28

ZnO nanorods (NRs) and Ag nanoparticles (NPs) are known to enhance the luminescence of light-emitting diodes (LEDs) through the high directionality of waveguide mode transmission and efficient energy transfer of localized surface plasmon (LSP) resonances, respectively. In this work, we have demonstrated Ag NP-incorporated n-ZnO NRs/p-GaN heterojunctions by facilely hydrothermally growing ZnO NRs on Ag NP-covered GaN, in which the Ag NPs were introduced and randomly distributed on the p-GaN surface to excite the LSP resonances. Compared with the reference LED, the light-output power of the near-band-edge (NBE) emission (ZnO, λ = 380 nm) of our hybridized structure is increased almost 1.5-2 times and can be further modified in a controlled manner by varying the surface morphology of the surrounding medium of the Ag NPs. The improved light-output power is mainly attributed to the LSP resonance between the NBE emission of ZnO NRs and LSPs in Ag NPs. We also observed different behaviors in the electroluminescence (EL) spectra as the injection current increases for the treatment and reference LEDs. This observation might be attributed to the modification of the energy band diagram for introducing Ag NPs at the interface between n-ZnO NRs and p-GaN. Our results pave the way for developing advanced nanostructured LED devices with high luminescence efficiency in the UV emission regime.

Whole high-quality light environment for humans and plants.

PubMed

Sharakshane, Anton

2017-11-01

Plants sharing a single light environment on a spaceship with a human being and bearing a decorative function should look as natural and attractive as possible. And consequently they can be illuminated only with white light with a high color rendering index. Can lighting optimized for a human eye be effective and appropriate for plants? Spectrum-based effects have been compared under artificial lighting of plants by high-pressure sodium lamps and general-purpose white LEDs. It has been shown that for the survey sample phytochrome photo-equilibria does not depend significantly on the parameters of white LED light, while the share of phytoactive blue light grows significantly as the color temperature increases. It has been revealed that yield photon flux is proportional to luminous efficacy and increases as the color temperature decreases, general color rendering index R a and the special color rendering index R 14 (green leaf) increase. General-purpose white LED lamps with a color temperature of 2700 K, R a  > 90 and luminous efficacy of 100 lm/W are as efficient as the best high-pressure sodium lamps, and at a higher luminous efficacy their yield photon flux per joule is even bigger in proportion. Here we show that demand for high color rendering white LED light is not contradictory to the agro-technical objectives. Copyright © 2017. Published by Elsevier Ltd.

Investigation of thermal management technique in blue LED airport taxiway fixtures

NASA Astrophysics Data System (ADS)

Gu, Yimin; Baker, Alex; Narendran, Nadarajah

2007-09-01

On airport runways, blue light fixtures denote taxiways between the runway and the airport terminal. Blue optics transmit mostly short-wavelength radiation, which makes traditional incandescent lamps a poor choice of light source; the resulting fixture efficiency could be less than one percent. LEDs are replacing incandescent lamps in this application. But unlike incandescent sources, LEDs do not radiate enough heat to melt ice and snow from the fixture optics. To meet Federal Aviation Administration (FAA) regulations for weatherability, some LED-based fixtures incorporate electric heaters that, when switched on, nearly negate the energy-savings benefit of converting to LED sources. In this study, we explored methods for conduction and convection of LED junction heat to taxiway fixture optics for the purpose of minimizing snow and ice buildup. A more efficient LED-based system compared to incandescent that would require no additional heaters was demonstrated.

A brief history of LED photopolymerization.

PubMed

Jandt, Klaus D; Mills, Robin W

2013-06-01

The majority of modern resin-based oral restorative biomaterials are cured via photopolymerization processes. A variety of light sources are available for this light curing of dental materials, such as composites or fissure sealants. Quartz-tungsten-halogen (QTH) light curing units (LCUs) have dominated light curing of dental materials for decades and are now almost entirely replaced by modern light emitting diode light curing units (LED LCUs). Exactly 50 years ago, visible LEDs were invented. Nevertheless, it was not before the 1990s that LEDs were seriously considered by scientists or manufactures of commercial LCUs as light sources to photopolymerize dental composites and other dental materials. The objective of this review paper is to give an overview of the scientific development and state-of-the-art of LED photopolymerization of oral biomaterials. The materials science of LED LCU devices and dental materials photopolymerized with LED LCU, as well as advantages and limits of LED photopolymerization of oral biomaterials, are discussed. This is mainly based on a review of the most frequently cited scientific papers in international peer reviewed journals. The developments of commercial LED LCUs as well as aspects of their clinical use are considered in this review. The development of LED LCUs has progressed in steps and was made possible by (i) the invention of visible light emitting diodes 50 years ago; (ii) the introduction of high brightness blue light emitting GaN LEDs in 1994; and (iii) the creation of the first blue LED LCUs for the photopolymerization of oral biomaterials. The proof of concept of LED LCUs had to be demonstrated by the satisfactory performance of resin based restorative dental materials photopolymerized by these devices, before LED photopolymerization was generally accepted. Hallmarks of LED LCUs include a unique light emission spectrum, high curing efficiency, long life, low energy consumption and compact device form factor. By understanding the physical principles of LEDs, the development of LED LCUs, their strengths and limitations and the specific benefits of LED photopolymerization will be better appreciated. Copyright © 2013 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih

Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be usedmore » to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.« less

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

DOE PAGES

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...

2016-11-09

Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be usedmore » to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.« less

Thermo-mechanical properties of carbon nanotubes and applications in thermal management

NASA Astrophysics Data System (ADS)

Nguyen, Manh Hong; Thang Bui, Hung; Trinh Pham, Van; Phan, Ngoc Hong; Nguyen, Tuan Hong; Chuc Nguyen, Van; Quang Le, Dinh; Khoi Phan, Hong; Phan, Ngoc Minh

2016-06-01

Thanks to their very high thermal conductivity, high Young’s modulus and unique tensile strength, carbon nanotubes (CNTs) have become one of the most suitable nano additives for heat conductive materials. In this work, we present results obtained for the synthesis of heat conductive materials containing CNT based thermal greases, nanoliquids and lubricating oils. These synthesized heat conductive materials were applied to thermal management for high power electronic devices (CPUs, LEDs) and internal combustion engines. The simulation and experimental results on thermal greases for an Intel Pentium IV processor showed that the thermal conductivity of greases increases 1.4 times and the saturation temperature of the CPU decreased by 5 °C by using thermal grease containing 2 wt% CNTs. Nanoliquids containing CNT based distilled water/ethylene glycol were successfully applied in heat dissipation for an Intel Core i5 processor and a 450 W floodlight LED. The experimental results showed that the saturation temperature of the Intel Core i5 processor and the 450 W floodlight LED decreased by about 6 °C and 3.5 °C, respectively, when using nanoliquids containing 1 g l-1 of CNTs. The CNTs were also effectively utilized additive materials for the synthesis of lubricating oils to improve the thermal conductivity, heat dissipation efficiency and performance efficiency of engines. The experimental results show that the thermal conductivity of lubricating oils increased by 12.5%, the engine saved 15% fuel consumption, and the longevity of the lubricating oil increased up to 20 000 km by using 0.1% vol. CNTs in the lubricating oils. All above results have confirmed the tremendous application potential of heat conductive materials containing CNTs in thermal management for high power electronic devices, internal combustion engines and other high power apparatus.

Improving efficiency of polystyrene concrete production with composite binders

NASA Astrophysics Data System (ADS)

Lesovik, R. V.; Ageeva, M. S.; Lesovik, G. A.; Sopin, D. M.; Kazlitina, O. V.; Mitrokhina, A. A.

2018-03-01

According to leading marketing researchers, the construction market in Russia and CIS will continue growing at a rapid rate; this applies not only to a large-scale major construction, but to a construction of single-family houses and small-scale industrial facilities as well. Due to this, there are increased requirements for heat insulation of the building enclosures and a significant demand for efficient walling materials with high thermal performance. All these developments led to higher requirements imposed on the equipment that produces such materials.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn

The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3 nm–6 nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200 A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelengthmore » we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.« less

Does multi-functionality affect technical efficiency? A non-parametric analysis of the Scottish dairy industry.

PubMed

Barnes, A P

2006-09-01

Recent policy changes within the Common Agricultural Policy have led to a shift from a solely production-led agriculture towards the promotion of multi-functionality. Conversely, the removal of production-led supports would indicate that an increased concentration on production efficiencies would seem a critical strategy for a country's future competitiveness. This paper explores the relationship between the 'multi-functional' farming attitude desired by policy makers and its effect on technical efficiency within Scottish dairy farming. Technical efficiency scores are calculated by applying the non-parametric data envelopment analysis technique and then measured against causes of inefficiency. Amongst these explanatory factors is a constructed score of multi-functionality. This research finds that, amongst other factors, a multi-functional attitude has a significant positive effect on technical efficiency. Consequently, this seems to validate the promotion of a multi-functional approach to farming currently being championed by policy-makers.

Coupled nutrient removal and biomass production with mixed algal culture: impact of biotic and abiotic factors.

PubMed

Su, Yanyan; Mennerich, Artur; Urban, Brigitte

2012-08-01

The influence of biotic (algal inoculum concentration) and abiotic factors (illumination cycle, mixing velocity and nutrient strength) on the treatment efficiency, biomass generation and settleability were investigated with selected mixed algal culture. Dark condition led to poor nutrient removal efficiency. No significant difference in the N, P removal and biomass settleability between continuous and alternating illumination was observed, but a higher biomass generation capability for the continuous illumination was obtained. Different mixing velocity led to similar phosphorus removal efficiencies (above 98%) with different retention times. The reactor with 300 rpm mixing velocity had the best N removal capability. For the low strength wastewater, the N rates were 5.4±0.2, 9.1±0.3 and 10.8±0.3 mg/l/d and P removal rates were 0.57±0.03, 0.56±0.03 and 0.72±0.05 mg/l/d for reactors with the algal inoculum concentration of 0.2, 0.5 and 0.8 g/l, respectively. Low nutrient removal efficiency and poor biomass settleability were obtained for high strength wastewater. Copyright © 2012 Elsevier Ltd. All rights reserved.

Investigating the origin of efficiency droop by profiling the voltage across the multi-quantum well of an operating light-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Taewoong; Seong, Tae-Yeon; School of Materials Science and Engineering, Korea University, Seoul 136-713

Efficiency droop is a phenomenon in which the efficiency of a light-emitting diode (LED) decreases with the increase in current density. To analyze efficiency droop, direct experimental observations on the energy conversion occurring inside the LED is required. Here, we present the measured voltage profiles on the cross section of an operating LED and analyze them with the cross-sectional temperature profiles obtained in a previous study under the same operation conditions. The measured voltage profiles suggest that with increases in the injection current density, electron depletion shifts from the multi-quantum well through an electron blocking layer to the p-GaN region.more » This is because electron leakage increases with increases in current density.« less

Optical design of an in vivo laparoscopic lighting system.

PubMed

Liu, Xiaolong; Abdolmalaki, Reza Yazdanpanah; Mancini, Gregory J; Tan, Jindong

2017-12-01

This paper proposes an in vivo laparoscopic lighting system design to address the illumination issues, namely poor lighting uniformity and low optical efficiency, existing in the state-of-the-art in vivo laparoscopic cameras. The transformable design of the laparoscopic lighting system is capable of carrying purposefully designed freeform optical lenses for achieving lighting performance with high illuminance uniformity and high optical efficiency in a desired target region. To design freeform optical lenses for extended light sources such as LEDs with Lambertian light intensity distributions, we present an effective and complete freeform optical design method. The procedures include (1) ray map computation by numerically solving a standard Monge-Ampere equation; (2) initial freeform optical surface construction by using Snell's law and a lens volume restriction; (3) correction of surface normal vectors due to accumulated errors from the initially constructed surfaces; and (4) feedback modification of the solution to deal with degraded illuminance uniformity caused by the extended sizes of the LEDs. We employed an optical design software package to evaluate the performance of our laparoscopic lighting system design. The simulation results show that our design achieves greater than 95% illuminance uniformity and greater than 89% optical efficiency (considering Fresnel losses) for illuminating the target surgical region. (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).

A Survey of Methods for Analyzing and Improving GPU Energy Efficiency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mittal, Sparsh; Vetter, Jeffrey S

2014-01-01

Recent years have witnessed a phenomenal growth in the computational capabilities and applications of GPUs. However, this trend has also led to dramatic increase in their power consumption. This paper surveys research works on analyzing and improving energy efficiency of GPUs. It also provides a classification of these techniques on the basis of their main research idea. Further, it attempts to synthesize research works which compare energy efficiency of GPUs with other computing systems, e.g. FPGAs and CPUs. The aim of this survey is to provide researchers with knowledge of state-of-the-art in GPU power management and motivate them to architectmore » highly energy-efficient GPUs of tomorrow.« less

Ultraviolet light-emitting diodes in water disinfection.

PubMed

Vilhunen, Sari; Särkkä, Heikki; Sillanpää, Mika

2009-06-01

The novel system of ultraviolet light-emitting diodes (UV LEDs) was studied in water disinfection. Conventional UV lamps, like mercury vapor lamp, consume much energy and are considered to be problem waste after use. UV LEDs are energy efficient and free of toxicants. This study showed the suitability of LEDs in disinfection and provided information of the effect of two emitted wavelengths and different test mediums to Escherichia coli destruction. Common laboratory strain of E. coli (K12) was used and the effects of two emitted wavelengths (269 and 276 nm) were investigated with two photolytic batch reactors both including ten LEDs. The effects of test medium were examined with ultrapure water, nutrient and water, and nutrient and water with humic acids. Efficiency of reactors was almost the same even though the one emitting higher wavelength had doubled optical power compared to the other. Therefore, the effect of wavelength was evident and the radiation emitted at 269 nm was more powerful. Also, the impact of background was studied and noticed to have only slight deteriorating effect. In the 5-min experiment, the bacterial reduction of three to four log colony-forming units (CFU) per cubic centimeter was achieved, in all cases. When turbidity of the test medium was greater, part of the UV radiation was spent on the absorption and reactions with extra substances on liquid. Humic acids can also coat the bacteria reducing the sensitivity of the cells to UV light. The lower wavelength was distinctly more efficient when the optical power is considered, even though the difference of wavelengths was small. The reason presumably is the greater absorption of DNA causing more efficient bacterial breakage. UV LEDs were efficient in E. coli destruction, even if LEDs were considered to have rather low optical power. The effect of wavelengths was noticeable but the test medium did not have much impact. This study found UV LEDs to be an optimal method for bacterial disinfection. The emitted wavelength was found to be an essential factor when using LEDs; thus, care should be taken in selecting the proper LED for maximum disinfection.

P-type surface effects for thickness variation of 2um and 4um of n-type layer in GaN LED

NASA Astrophysics Data System (ADS)

Halim, N. S. A. Abdul; Wahid, M. H. A.; Hambali, N. A. M. Ahmad; Rashid, S.; Ramli, M. M.; Shahimin, M. M.

2017-09-01

The internal quantum efficiency of III-Nitrides group, GaN light-emitting diode (LED) has been considerably limited due to the insufficient hole injection and this is caused by the lack of performance p-type doping and low hole mobility. The low hole mobility makes the hole less energetic, thus reduced the performance operation of GaN LED itself. The internal quantum efficiency of GaN-based LED with surface roughness (texture) can be changed by texture size, density, and thickness of GaN film or by the combined effects of surface shape and thickness of GaN film. Besides, due to lack of p-type GaN, attempts to look forward the potential of GaN LED relied on the thickness of n-type layer and surface shape of p-type GaN layer. This work investigates the characteristics of GaN LED with undoped n-GaN layer of different thickness and the surface shape of p-type layer. The LEDs performance is significantly altered by modifying the thickness and shape. Enhancement of n-GaN layer has led to the annihilation of electrical conductivity of the chip. Different surface geometry governs the emission rate extensively. Internal quantum efficiency is also predominantly affected by the geometry of n-GaN layer which subjected to the current spreading. It is recorded that the IQE droop can be minimized by varying the thickness of the active layer without amplifying the forward voltage. Optimum forward voltage (I-V), total emission rate relationship with the injected current and internal quantum efficiency (IQE) for 2,4 µm on four different surfaces of p-type layer are also reported in this paper.

Metasurfaces based on Gallium Nitride High Contrast Gratings at Visible Range

NASA Astrophysics Data System (ADS)

Wang, Zhenhai; He, Shumin; Liu, Qifa; Wang, Wei; Wang, Yongjin; Zhu, Hongbo; Grünberg Research Centre Team

2015-03-01

Metasurfaces are currently attracting global attention due to their ability to achieve full control of light propagation. However, these metasurfaces have thus far been constructed mostly from metallic materials, which greatly limit the diffraction efficiencies because of the ohmic losses. Semiconducting metasurfaces offer one potential solution to the issue of losses. Besides, the use of semiconducting materials can broaden the applicability of metasurfaces, as they enable facile integration with electronics and mechanical systems and can benefit from mature semiconductor fabrication technologies. We have proposed visible-light metasurfaces (VLMs) capable of serving as lenses and beam deflecting elements based on gallium nitride (GaN) high contrast gratings (HCGs). By precisely manipulating the wave-fronts of the transmitted light, we theoretically demonstrate an HCG focusing lens with transmissivity of 83.0% and numerical aperture of 0.77, and a VLM with beam deflection angle of 6.03° and transmissivity as high as 93.3%. The proposed metasurfaces are promising for GaN-based visible light-emitting diodes (LEDs), which would be robust and versatile for controlling the output light propagation and polarization, as well as enhancing the extraction efficiency of the LEDs.

Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources

PubMed Central

Zhao, S.; Connie, A. T.; Dastjerdi, M. H. T.; Kong, X. H.; Wang, Q.; Djavid, M.; Sadaf, S.; Liu, X. D.; Shih, I.; Guo, H.; Mi, Z.

2015-01-01

Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep ultraviolet (DUV) applications, the performance of conventional Al(Ga)N planar devices drastically decays when approaching the AlN end, including low internal quantum efficiencies (IQEs) and high device operation voltages. Here we show that these challenges can be addressed by utilizing nitrogen (N) polar Al(Ga)N nanowires grown directly on Si substrate. By carefully tuning the synthesis conditions, a record IQE of 80% can be realized with N-polar AlN nanowires, which is nearly ten times higher compared to high quality planar AlN. The first 210 nm emitting AlN nanowire light emitting diodes (LEDs) were achieved, with a turn on voltage of about 6 V, which is significantly lower than the commonly observed 20 – 40 V. This can be ascribed to both efficient Mg doping by controlling the nanowire growth rate and N-polarity induced internal electrical field that favors hole injection. In the end, high performance N-polar AlGaN nanowire LEDs with emission wavelengths covering the UV-B/C bands were also demonstrated. PMID:25684335

LED Lighting – Modification of Growth, Metabolism, Yield and Flour Composition in Wheat by Spectral Quality and Intensity

PubMed Central

Monostori, István; Heilmann, Márk; Kocsy, Gábor; Rakszegi, Marianna; Ahres, Mohamed; Altenbach, Susan B.; Szalai, Gabriella; Pál, Magda; Toldi, Dávid; Simon-Sarkadi, Livia; Harnos, Noémi; Galiba, Gábor; Darko, Éva

2018-01-01

The use of light-emitting diode (LED) technology for plant cultivation under controlled environmental conditions can result in significant reductions in energy consumption. However, there is still a lack of detailed information on the lighting conditions required for optimal growth of different plant species and the effects of light intensity and spectral composition on plant metabolism and nutritional quality. In the present study, wheat plants were grown under six regimens designed to compare the effects of LED and conventional fluorescent lights on growth and development, leaf photosynthesis, thiol and amino acid metabolism as well as grain yield and flour quality of wheat. Benefits of LED light sources over fluorescent lighting were manifested in both yield and quality of wheat. Elevated light intensities made possible with LEDs increased photosynthetic activity, the number of tillers, biomass and yield. At lower light intensities, blue, green and far-red light operated antagonistically during the stem elongation period. High photosynthetic activity was achieved when at least 50% of red light was applied during cultivation. A high proportion of blue light prolonged the juvenile phase, while the shortest flowering time was achieved when the blue to red ratio was around one. Blue and far-red light affected the glutathione- and proline-dependent redox environment in leaves. LEDs, especially in Blue, Pink and Red Low Light (RedLL) regimens improved flour quality by modifying starch and protein content, dough strength and extensibility as demonstrated by the ratios of high to low molecular weight glutenins, ratios of glutenins to gliadins and gluten spread values. These results clearly show that LEDs are efficient for experimental wheat cultivation, and make it possible to optimize the growth conditions and to manipulate metabolism, yield and quality through modification of light quality and quantity. PMID:29780400

LED Lighting - Modification of Growth, Metabolism, Yield and Flour Composition in Wheat by Spectral Quality and Intensity.

PubMed

Monostori, István; Heilmann, Márk; Kocsy, Gábor; Rakszegi, Marianna; Ahres, Mohamed; Altenbach, Susan B; Szalai, Gabriella; Pál, Magda; Toldi, Dávid; Simon-Sarkadi, Livia; Harnos, Noémi; Galiba, Gábor; Darko, Éva

2018-01-01

The use of light-emitting diode (LED) technology for plant cultivation under controlled environmental conditions can result in significant reductions in energy consumption. However, there is still a lack of detailed information on the lighting conditions required for optimal growth of different plant species and the effects of light intensity and spectral composition on plant metabolism and nutritional quality. In the present study, wheat plants were grown under six regimens designed to compare the effects of LED and conventional fluorescent lights on growth and development, leaf photosynthesis, thiol and amino acid metabolism as well as grain yield and flour quality of wheat. Benefits of LED light sources over fluorescent lighting were manifested in both yield and quality of wheat. Elevated light intensities made possible with LEDs increased photosynthetic activity, the number of tillers, biomass and yield. At lower light intensities, blue, green and far-red light operated antagonistically during the stem elongation period. High photosynthetic activity was achieved when at least 50% of red light was applied during cultivation. A high proportion of blue light prolonged the juvenile phase, while the shortest flowering time was achieved when the blue to red ratio was around one. Blue and far-red light affected the glutathione- and proline-dependent redox environment in leaves. LEDs, especially in Blue, Pink and Red Low Light (RedLL) regimens improved flour quality by modifying starch and protein content, dough strength and extensibility as demonstrated by the ratios of high to low molecular weight glutenins, ratios of glutenins to gliadins and gluten spread values. These results clearly show that LEDs are efficient for experimental wheat cultivation, and make it possible to optimize the growth conditions and to manipulate metabolism, yield and quality through modification of light quality and quantity.

A Thermally Stable NiZn/Ta/Ni Scheme to Replace AuBe/Au Contacts in High-Efficiency AlGaInP-Based Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Kim, Dae-Hyun; Park, Jae-Seong; Kang, Daesung; Seong, Tae-Yeon

2017-08-01

We developed NiZn/(Ta/)Ni ohmic contacts to replace expensive AuBe/Au contacts commonly used in high-efficiency AlGaInP-based light-emitting diodes (LEDs), and compared the electrical properties of the two contact types. Unlike the AuBe/Au (130 nm/100 nm) contact, the NiZn/Ta/Ni (130 nm/20 nm/100 nm) contact shows improved electrical properties after being annealed at 500°C, with a contact resistivity of 5.2 × 10-6 Ω cm2. LEDs with the NiZn/Ta/Ni contact exhibited a 4.4% higher output power (at 250 mW) than LEDs with the AuBe/Au contact. In contrast to the trend for the AuBe/Au contact, the Ga 2 p core level for the NiZn/Ta/Ni contact shifted toward lower binding energies after being annealed at 500°C. Auger electron spectroscopy (AES) depth profiles showed that annealing the AuBe/Au samples caused the outdiffusion of both Be and P atoms into the metal contact, whereas in the NiZn/Ta/Ni samples, Zn atoms indiffused into the GaP layer. The annealing-induced electrical degradation and ohmic contact formation mechanisms are described and discussed on the basis of the results of x-ray photoemission spectroscopy and AES.

Promises and challenges in solid-state lighting

NASA Astrophysics Data System (ADS)

Schubert, Fred

2010-03-01

Lighting technologies based on semiconductor light-emitting diodes (LEDs) offer unprecedented promises that include three major benefits: (i) Gigantic energy savings enabled by efficient conversion of electrical energy to optical energy; (ii) Substantial positive contributions to sustainability through reduced emissions of global-warming gases, acid-rain gases, and toxic substances such as mercury; and (iii) The creation of new paradigms in lighting driven by the unique controllability of solid-state lighting sources. Due to the powerful nature of these benefits, the transition from conventional lighting sources to solid-state lighting is virtually assured. This presentation will illustrate the new world of lighting and illustrate the pervasive changes to be expected in lighting, displays, communications, and biotechnology. The presentation will also address the formidable challenges that must be addressed to continue the further advancement of solid-state lighting technology. These challenges offer opportunities for research and innovation. Specific challenges include light management, carrier transport, and optical design. We will present some innovative approaches in order to solve known technical challenges faced by solid-state lighting. These approaches include the demonstration and use of new optical thin-film materials with a continuously tunable refractive index. These approaches also include the use of polarization-matched structures that reduce the polarization fields in GaInN LEDs and the hotly debated efficiency droop, that is, the decreasing LED efficiency at high currents.

Highly luminescent InP/GaP/ZnS nanocrystals and their application to white light-emitting diodes.

PubMed

Kim, Sungwoo; Kim, Taehoon; Kang, Meejae; Kwak, Seong Kwon; Yoo, Tae Wook; Park, Lee Soon; Yang, Ilseung; Hwang, Sunjin; Lee, Jung Eun; Kim, Seong Keun; Kim, Sang-Wook

2012-02-29

Highly stable and luminescent InP/GaP/ZnS QDs with a maximum quantum yield of 85% were synthesized by in situ method. The GaP shell rendered passivation of the surface and removed the traps. TCSPC data showed an evidence for the GaP shell. InP/GaP/ZnS QDs show better stability than InP/ZnS. We studied the optical properties of white QD-LEDs corresponding to various QD concentrations. Among various concentrations, the white QD-LEDs with 0.5 mL of QDs exhibited a luminous efficiency of 54.71 lm/W, Ra of 80.56, and CCT of 7864 K. © 2012 American Chemical Society

Light Source

NASA Technical Reports Server (NTRS)

1993-01-01

Research on food growth for long duration spacecraft has resulted in a light source for growing plants indoors known as Qbeam, a solid state light source consisting of a control unit and lamp. The light source, manufactured by Quantum Devices, Inc., is not very hot, although it generates high intensity radiation. When Ron Ignatius, an industrial partner of WCSAR, realized that terrestrial plant research lighting was not energy efficient enough for space use, he and WCSAR began to experiment with light emitting diodes. A line of LED products was developed, and QDI was formed to market the technology. An LED-based cancer treatment device is currently under development.

Direct correlations of structural and optical properties of three-dimensional GaN/InGaN core/shell micro-light emitting diodes

NASA Astrophysics Data System (ADS)

Sadat Mohajerani, Matin; Müller, Marcus; Hartmann, Jana; Zhou, Hao; Wehmann, Hergo-H.; Veit, Peter; Bertram, Frank; Christen, Jürgen; Waag, Andreas

2016-05-01

Three-dimensional (3D) InGaN/GaN quantum-well (QW) core-shell light emitting diodes (LEDs) are a promising candidate for the future solid state lighting. In this contribution, we study direct correlations of structural and optical properties of the core-shell LEDs using highly spatially-resolved cathodoluminescence spectroscopy (CL) in combination with scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM). Temperature-dependent resonant photoluminescence (PL) spectroscopy has been performed to understand recombination mechanisms and to estimate the internal quantum efficiency (IQE).

Design of a secondary lens using gaussian function

NASA Astrophysics Data System (ADS)

Anh, Nguyen Doan Quoc; Long, Nguyen Ngoc; Van Phuoc, Nguyen; Voznak, Miroslav; Zdralek, Jaroslav

2018-04-01

In the article, it is recognized that the high-intensity discharge (HID) fishing lamp becomes obsolete, so we designed a free secondary lens for an LED fishing/working lamp (LFWL) to serve the lighting needs of fishing and the on-board activities on fishing boats through gaussian decomposition for taking the place it. The results proved that it is really useful to the board, sea-surface, and underwater. Moreover, the lighting efficiency of 91 % with the power consumption reducing more than 3 times could be achieved when the proposed LED fishing/working lamps are used instead of the HID fishing lamps.

Thermally Stable White Emitting Eu3+ Complex@Nanozeolite@Luminescent Glass Composite with High CRI for Organic-Resin-Free Warm White LEDs.

PubMed

Zhang, Jinhui; Gong, Shuming; Yu, Jinbo; Li, Peng; Zhang, Xuejie; He, Yuwei; Zhou, Jianbang; Shi, Rui; Li, Huanrong; Peng, Aiyun; Wang, Jing

2017-03-01

Nowadays, it is still a great challenge for lanthanide complexes to be applied in solid state lighting, especially for high-power LEDs because they will suffer severe thermal-induced luminescence quenching and transmittance loss when LEDs are operated at high current. In this paper, we have not only obtained high efficient and thermally chemical stable red emitting hybrid material by introducing europium complex into nanozeolite (NZ) functionalized with the imidazolium-based stopper but also abated its thermal-induced transmittance loss and luminescence quenching behavior via coating it onto a heat-resistant luminescent glass (LG) with high thermal conductivity (1.07 W/mK). The results show that the intensity at 400 K for Eu(PPO) n -C 4 Si@NZ@LG remains 21.48% of the initial intensity at 300 K, which is virtually 153 and 13 times the intensity of Eu(PPO) 3 ·2H 2 O and Eu(PPO) n -C 4 Si@NZ, respectively. Moreover, an organic-resin-free warm white LEDs device with a low CCT of 3994K, a high Ra of 90.2 and R9 of 57.9 was successfully fabricated simply by combining NUV-Chip-On-Board with a warm white emitting glass-film composite (i.e., yellowish-green emitting luminescent glass coated with red emitting hybrid film). Our method and results provide a feasible and promising way for lanthanide complexes to be used for general illumination in the future.

Evaluating UV-C LED disinfection performance and ...

EPA Pesticide Factsheets

This study evaluated ultraviolet (UV) light emitting diodes (LEDs) emitting at 260 nm, 280 nm, and the combination of 260|280 nm together for their efficacy at inactivating Escherichia. coli, MS2 coliphage, human adenovirus type 2 (HAdV2), and Bacillus pumilus spores; research included an evaluation of genomic damage. Inactivation by the LEDs was compared with the efficacy of conventional UV sources, the low-pressure (LP) and medium-pressure (MP) mercury vapor lamps. The work also calculated the electrical energy per order of reduction of the microorganisms by the five UV sources.For E. coli, all five UV sources yielded similar inactivation rates. For MS2 coliphage, the 260 nm LED was most effective. For HAdV2 and B. pumilus, the MP UV lamp was significantly more effective than the LP UV and UVC LED sources. When considering electrical energy per order of reduction, the LP UV lamp was the most efficient for E. coli and MS2, and the MPUV and LPUV were equally efficient for HAdV2 and B. pumilus spores. Among the UVC LEDs, the 280 nm LED unit required the least energy per log reduction of E. coli and HAdV2. The 280 nm and 260|280 nm LED units were equally efficient per log reduction of B. pumilus spores, and the 260 nm LED unit required the lowest energy per order of reduction of MS2 coliphage. The combination of the 260 nm and 280 nm UV LED wavelengths was also evaluated for potential synergistic effects. No dual-wavelength synergy was detected for inactivation of

Research at Lincoln Laboratory leading up to the development of the injection laser in 1962

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rediker, R.H.

1987-06-01

In 1958 the semiconductor device group at Lincoln Laboratory began to concentrate its efforts on exploiting GaAs. These efforts, in addition to yielding diodes with ns switching speeds, led to the development in early 1962 of diodes which emitted near-bandgap radiation with very high efficiency, and to the development in October 1962 of the diode laser. The theory of the semiconductor laser developed at Lincoln Laboratory in the mid-to-late 1950's provided the foundation necessary for the design of the diode laser structure after the highly efficient production of near-bandgap radiation was demonstrated.

Research at Lincoln Laboratory leading up to the development of the injection laser in 1962

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rediker, R.H.

1987-06-01

In 1958 the Semiconductor Device Group at Lincoln Laboratory began to concentrate its efforts on exploiting GaAs. these efforts, in addition to yielding diodes which ns switching speeds, led to the development in early 1962 of diodes that emitted near-bandgap radiation with very high efficiency, and to the development in October 1962 of the diode laser. The theory of the semiconductor laser developed at Lincoln Laboratory in the mid-to-late 1950's provided the foundation necessary for the design of the diode laser structure after the highly efficient production of near-bandgap radiation was demonstrated.

A highly efficient dual-diazonium reagent for protein crosslinking and construction of a virus-based gel.

PubMed

Ma, Dejun; Zhang, Jie; Zhang, Changyu; Men, Yuwen; Sun, Hongyan; Li, Lu-Yuan; Yi, Long; Xi, Zhen

2018-05-09

A new bench-stable reagent with double diazonium sites was designed and synthesized for protein crosslinking. Based on the highly efficient diazonium-Tyr coupling reaction, a direct mixture of the reagent and tobacco mosaic virus led to the formation of a new hydrogel, which could be degraded by chemicals and could be used to encapsulate small molecules for sustained release. Because plant viruses exhibit many chemical characteristics like protein labelling and nucleic acid packaging, the virus-based hydrogel will have large chemical space for further functionalization. Besides, this dual-diazonium reagent should be a generally useful crosslinker for chemical biology and biomaterials.

Full spectral optical modeling of quantum-dot-converted elements for light-emitting diodes considering reabsorption and reemission effect.

PubMed

Li, Jia-Sheng; Tang, Yong; Li, Zong-Tao; Cao, Kai; Yan, Cai-Man; Ding, Xin-Rui

2018-07-20

Quantum dots (QDs) have attracted significant attention in light-emitting diode (LED) illumination and display applications, owing to their high quantum yield and unique spectral properties. However, an effective optical model of quantum-dot-converted elements (QDCEs) for (LEDs) that entirely considers the reabsorption and reemission effect is lacking. This suppresses the design of QDCE structures and further investigation of light-extraction/conversion mechanisms in QDCEs. In this paper, we proposed a full spectral optical modeling method for QDCEs packaged in LEDs, entirely considering the reabsorption and reemission effect, and its results are compared with traditional models without reabsorption or reemission. The comparisons indicate that the QDCE absorption loss of QD emission light is a major factor decreasing the radiant efficacy of LEDs, which should be considered when designing QDCE structures. According to the measurements of fabricated LEDs, only calculation results that entirely consider reabsorption and reemission show good agreement with experimental radiant efficacy, spectra, and peak wavelength at the same down-conversion efficiency. Consequently, it is highly expected that QDCE will be modeled considering the reabsorption and reemission events. This study provides a simple and effective modeling method for QDCEs, which shows great potential for their structure designs and fundamental investigations.

Increasing the effective absorption of Eu3+-doped luminescent materials towards practical light emitting diodes for illumination applications

NASA Astrophysics Data System (ADS)

van de Haar, Marie Anne; Werner, Jan; Kratz, Nadja; Hilgerink, Tom; Tachikirt, Mohamed; Honold, Jürgen; Krames, Michael R.

2018-03-01

White light emitting diodes (LEDs) composed of a blue LED and a green/yellow downconverter material (phosphor) can be very efficient, but the color is often not considered very pleasant. Although the color rendering can be improved by adding a second, red-emitting phosphor, this generally results in significantly reduced efficacy of the device due to the broad emission of available conventional red-emitting phosphors. Trivalent europium is well-known for its characteristic narrow-band emission in the red region, with little radiation outside the eye sensitivity area, making it an ideal candidate for enabling high color quality as well as a high lumen equivalent of radiation from a spectrum point of view. However, a thorough study of the practical potential and challenges of Eu3+ as a red emitter for white LEDs has remained elusive so far due to the low excitation probability in the blue spectral range which is often even considered a fundamental limitation. Here, we show that the absorption in the blue region can be brought into an interesting regime for white LEDs and show that it is possible to increase both the color rendering and efficacy simultaneously using Eu3+ as a red emitter, compared to warm white LEDs comprising conventional materials.

Full spectral optical modeling of quantum-dot-converted elements for light-emitting diodes considering reabsorption and reemission effect

NASA Astrophysics Data System (ADS)

Li, Jia-Sheng; Tang, Yong; Li, Zong-Tao; Cao, Kai; Yan, Cai-Man; Ding, Xin-Rui

2018-07-01

Quantum dots (QDs) have attracted significant attention in light-emitting diode (LED) illumination and display applications, owing to their high quantum yield and unique spectral properties. However, an effective optical model of quantum-dot-converted elements (QDCEs) for (LEDs) that entirely considers the reabsorption and reemission effect is lacking. This suppresses the design of QDCE structures and further investigation of light-extraction/conversion mechanisms in QDCEs. In this paper, we proposed a full spectral optical modeling method for QDCEs packaged in LEDs, entirely considering the reabsorption and reemission effect, and its results are compared with traditional models without reabsorption or reemission. The comparisons indicate that the QDCE absorption loss of QD emission light is a major factor decreasing the radiant efficacy of LEDs, which should be considered when designing QDCE structures. According to the measurements of fabricated LEDs, only calculation results that entirely consider reabsorption and reemission show good agreement with experimental radiant efficacy, spectra, and peak wavelength at the same down-conversion efficiency. Consequently, it is highly expected that QDCE will be modeled considering the reabsorption and reemission events. This study provides a simple and effective modeling method for QDCEs, which shows great potential for their structure designs and fundamental investigations.

Bright colloidal quantum dot light-emitting diodes enabled by efficient chlorination

NASA Astrophysics Data System (ADS)

Li, Xiyan; Zhao, Yong-Biao; Fan, Fengjia; Levina, Larissa; Liu, Min; Quintero-Bermudez, Rafael; Gong, Xiwen; Quan, Li Na; Fan, James; Yang, Zhenyu; Hoogland, Sjoerd; Voznyy, Oleksandr; Lu, Zheng-Hong; Sargent, Edward H.

2018-03-01

The external quantum efficiencies of state-of-the-art colloidal quantum dot light-emitting diodes (QLEDs) are now approaching the limit set by the out-coupling efficiency. However, the brightness of these devices is constrained by the use of poorly conducting emitting layers, a consequence of the present-day reliance on long-chain organic capping ligands. Here, we report how conductive and passivating halides can be implemented in Zn chalcogenide-shelled colloidal quantum dots to enable high-brightness green QLEDs. We use a surface management reagent, thionyl chloride (SOCl2), to chlorinate the carboxylic group of oleic acid and graft the surfaces of the colloidal quantum dots with passivating chloride anions. This results in devices with an improved mobility that retain high external quantum efficiencies in the high-injection-current region and also feature a reduced turn-on voltage of 2.5 V. The treated QLEDs operate with a brightness of 460,000 cd m-2, significantly exceeding that of all previously reported solution-processed LEDs.

Suppression of electron overflow in 370-nm InGaN/AlGaN ultraviolet light emitting diodes with different insertion layer thicknesses

NASA Astrophysics Data System (ADS)

Wang, C. K.; Wang, Y. W.; Chiou, Y. Z.; Chang, S. H.; Jheng, J. S.; Chang, S. P.; Chang, S. J.

2017-06-01

In this study, the properties of 370-nm InGaN/AlGaN ultraviolet light emitting diodes (UV LEDs) with different thicknesses of un-doped Al0.3Ga0.7N insertion layer (IL) between the last quantum barrier and electron blocking layer (EBL) have been numerically simulated by Advance Physical Model of Semiconductor Devices (APSYS). The results show that the LEDs using the high Al composition IL can effectively improve the efficiency droop, light output power, and internal quantum efficiency (IQE) compared to the original structure. The improvements of the optical properties are mainly attributed to the energy band discontinuity and offset created by IL, which increase the potential barrier height of conduction band to suppress the electron overflow from the active region to the p-side layer.

The "New Economy": Real or High-Tech Bubble? Myths and Realities.

ERIC Educational Resources Information Center

Brown, Bettina Lankard

The "New Economy" implies a society in which information/communication technology is changing the nature of the workplace and contributing to more efficient and productive practices geared toward improving the quality of products and services. Recent events such as the collapse of dot.coms and corporate scandals have led some to doubt…

Small molecule BODIPY dyes as non-fullerene acceptors in bulk heterojunction organic photovoltaics.

PubMed

Poe, Ambata M; Della Pelle, Andrea M; Subrahmanyam, Ayyagari V; White, William; Wantz, Guillaume; Thayumanavan, S

2014-03-18

A series of acceptor-donor-acceptor molecules containing terminal BODIPY moieties conjugated through the meso position were synthesized. Deep LUMO energy levels and good visible absorption led to their use as acceptors in bulk heterojunction solar cells. Inverted devices were fabricated, reaching efficiencies as high as 1.51%.

Improving Light Distribution by Zoom Lens for Electricity Savings in a Plant Factory with Light-Emitting Diodes.

PubMed

Li, Kun; Li, Zhipeng; Yang, Qichang

2016-01-01

The high energy consumption of a plant factory is the biggest issue in its rapid expansion, especially for lighting electricity, which has been solved to a large extent by light-emitting diodes (LED). However, the remarkable potential for further energy savings remains to be further investigated. In this study, an optical system applied just below the LED was designed. The effects of the system on the growth and photosynthesis of butterhead lettuce (Lactuca sativa var. capitata) were examined, and the performance of the optical improvement in energy savings was evaluated by comparison with the traditional LED illumination mode. The irradiation patterns used were LED with zoom lenses (Z-LED) and conventional non-lenses LED (C-LED). The seedlings in both treatments were exposed to the same light environment over the entire growth period. The improvement saved over half of the light source electricity, while prominently lowering the temperature. Influenced by this, the rate of photosynthesis sharply decreased, causing reductions in plant yield and nitrate content, while having no negative effects on morphological parameters and photosynthetic pigment contents. Nevertheless, the much higher light use efficiency of Z-LEDs makes this system a better approach to illumination in a plant factory with artificial lighting.

Improving Light Distribution by Zoom Lens for Electricity Savings in a Plant Factory with Light-Emitting Diodes

PubMed Central

Li, Kun; Li, Zhipeng; Yang, Qichang

2016-01-01

The high energy consumption of a plant factory is the biggest issue in its rapid expansion, especially for lighting electricity, which has been solved to a large extent by light-emitting diodes (LED). However, the remarkable potential for further energy savings remains to be further investigated. In this study, an optical system applied just below the LED was designed. The effects of the system on the growth and photosynthesis of butterhead lettuce (Lactuca sativa var. capitata) were examined, and the performance of the optical improvement in energy savings was evaluated by comparison with the traditional LED illumination mode. The irradiation patterns used were LED with zoom lenses (Z-LED) and conventional non-lenses LED (C-LED). The seedlings in both treatments were exposed to the same light environment over the entire growth period. The improvement saved over half of the light source electricity, while prominently lowering the temperature. Influenced by this, the rate of photosynthesis sharply decreased, causing reductions in plant yield and nitrate content, while having no negative effects on morphological parameters and photosynthetic pigment contents. Nevertheless, the much higher light use efficiency of Z-LEDs makes this system a better approach to illumination in a plant factory with artificial lighting. PMID:26904062

High brightness nonpolar a-plane (11-20) GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Jung, Sukkoo; Chang, Younghak; Bang, Kyu-Hyun; Kim, Hyung-Gu; Choi, Yoon-Ho; Hwang, Sung-Min; Baik, Kwang Hyeon

2012-02-01

We report on high brightness nonpolar a-plane InGaN/GaN LEDs using patterned lateral overgrowth (PLOG) epitaxy. High crystal-quality and smooth surfaces for a-plane GaN (a-GaN) films were achieved using PLOG with an array of hexagonal SiO2 patterns. The XRC FWHMs of as-grown PLOG a-GaN films were found to be 414 and 317 arcsec (450 and 455 arcsec for planar a-GaN films) along the c-axis and m-axis directions, respectively. Plan-view CL clearly reveals the periodic hexagonal patterns with higher band edge emission intensity, implying that the luminescence properties of a-GaN films lying above the SiO2 mask are improved. The light output powers of a-InGaN/GaN PLOG LEDs were measured to be 7.5 mW and 20 mW at drive currents of 20 mA and 100 mA, respectively. A negligible blue-shift was observed in the peak emission wavelength with increasing drive current up to 100 mA, indicating that there are no strong internal fields in nonpolar a-InGaN/GaN LEDs. We believe that nonpolar a-plane InGaN/GaN LEDs hold promise for efficient nitride emitters if the growth conditions are further optimized.

Simulation and comparison of the illuminance, uniformity, and efficiency of different forms of lighting used in basketball court illumination.

PubMed

Sun, Wen-Shing; Tien, Chuen-Lin; Tsuei, Chih-Hsuan; Pan, Jui-Wen

2014-10-10

We simulate and compare the illuminance, uniformity, and efficiency of metal-halide lamps, white LED light sources, and hybrid light box designs combining sunlight and white LED lighting used for indoor basketball court illumination. According to the optical simulation results and our examination of real situations, we find that hybrid light box designs combining sunlight and white LEDs do perform better than either metal-halide lamps or white LED lights. An evaluation of the sunlight concentrator system used in our inverted solar cell shows that the energy consumption of stadium lighting can be reduced significantly.

Output blue light evaluation for phosphor based smart white LED wafer level packages.

PubMed

Kolahdouz, Zahra; Rostamian, Ali; Kolahdouz, Mohammadreza; Ma, Teng; van Zeijl, Henk; Zhang, Kouchi

2016-02-22

This study presents a blue light detector for evaluating the output light of phosphor based white LED package. It is composed of a silicon stripe-shaped photodiode designed and implemented in a 2 μm BiCMOS process which can be used for wafer level integration of different passive and active devices all in just 5 lithography steps. The final device shows a high selectivity to blue light. The maximum responsivity at 480 nm is matched with the target blue LED illumination. The designed structure have better responsivity compared to simple photodiode structure due to reducing the effect of dead layer formation close to the surface because of implantation. It has also a two-fold increase in the responsivity and quantum efficiency compared to previously similar published sensors.

Indoor visible light communication with smart lighting technology

NASA Astrophysics Data System (ADS)

Das Barman, Abhirup; Halder, Alak

2017-02-01

An indoor visible-light communication performance is investigated utilizing energy efficient white light by 2D LED arrays. Enabled by recent advances in LED technology, IEEE 802.15.7 standardizes high-data-rate visible light communication and advocates for colour shift keying (CSK) modulation to overcome flicker and to support dimming. Voronoi segmentation is employed for decoding N-CSK constellation which has superior performance compared to other existing decoding methods. The two chief performance degrading effects of inter-symbol interference and LED nonlinearity is jointly mitigated using LMS post equalization at the receiver which improves the symbol error rate performance and increases field of view of the receiver. It is found that LMS post equalization symbol at 250MHz offers 7dB SNR improvement at SER10-6

High extraction efficiency GaN-based light-emitting diodes on embedded SiO2 nanorod array and nanoscale patterned sapphire substrate

NASA Astrophysics Data System (ADS)

Huang, Hung-Wen; Huang, Jhi-Kai; Kuo, Shou-Yi; Lee, Kang-Yuan; Kuo, Hao-Chung

2010-06-01

In this paper, GaN-based LEDs with a nanoscale patterned sapphire substrate (NPSS) and a SiO2 photonic quasicrystal (PQC) structure on an n-GaN layer using nanoimprint lithography are fabricated and investigated. The light output power of LED with a NPSS and a SiO2 PQC structure on an n-GaN layer was 48% greater than that of conventional LED. Strong enhancement in output power is attributed to better epitaxial quality and higher reflectance resulted from NPSS and PQC structures. Transmission electron microscopy images reveal that threading dislocations are blocked or bended in the vicinities of NPSS layer. These results provide promising potential to increase output power for commercial light emitting devices.

Spectral effects of light-emitting diodes on plant growth and development: The importance of green and blue light

NASA Astrophysics Data System (ADS)

Cope, K. R.; Bugbee, B.

2011-12-01

Light-emitting diodes (LEDs) are an emerging technology for plant growth lighting. Due to their narrow spectral output, colored LEDs provide many options for studying the spectral effects of light on plants. Early on, efficient red LEDs were the primary focus of photobiological research; however, subsequent studies have shown that normal plant growth and development cannot be achieved under red light without blue light supplementation. More recent studies have shown that red and blue (RB) LEDs supplemented with green light increase plant dry mass. This is because green light transmits more effectively through the leaf canopy than red and blue light, thus illuminating lower plant leaves and increasing whole-plant photosynthesis. Red, green and blue (RGB) light can be provided by either a conventional white light source (such as fluorescent lights), a combination of RGB LEDs, or from recently developed white LEDs. White LEDs exceed the efficiency of fluorescent lights and have a comparable broad spectrum. As such, they have the potential to replace fluorescent lighting for growth-chamber-based crop production both on Earth and in space. Here we report the results of studies on the effects of three white LED types (warm, neutral and cool) on plant growth and development compared to combinations of RB and RGB LEDs. Plants were grown under two constant light intensities (200 and 500 μmol m-2 s-1). Temperature, environmental conditions and root-zone environment were uniformly maintained across treatments. Phytochrome photoequilbria and red/far-red ratios were similar among treatments and were comparable to conventional fluorescent lights. Blue light had a significant effect on both plant growth (dry mass gain) and development (dry mass partitioning). An increase in the absolute amount (μmol m-2 s-1) of blue light from 0-80 μmol m-2 s-1 resulted in a decrease in stem elongation, independent of the light intensity. However, an increase in the relative amount (%) of blue light caused a decrease in specific leaf area (leaf area per unit leaf mass). As the relative amount of blue light increased, chlorophyll concentration per unit leaf area increased, but chlorophyll concentration per unit leaf mass remained constant. The relative amount of blue light increased total dry mass in some species while it remained constant in others. An increase in the fraction of green light increased dry mass in radish. Overall, white LEDs provided a more uniform spectral distribution, reduced stem elongation and leaf area, and maintained or increased dry mass as compared to RB and RGB LEDs. Cool white LEDs are more electrically efficient than the other two white LEDs and have sufficient blue light for normal plant growth and development at both high and low light intensities. Compared to sunlight, cool white LEDs are perhaps deficient in red light and may therefore benefit from supplementation with red LEDs. Future studies will be conducted to test this hypothesis. These results have significant implication for LADA growth chambers which are currently used for vegetable production on the International Space Station.

Mitigating Structural Defects in Droop-Minimizing InGaN/GaN Quantum Well Heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Zhibo; Chesin, Jordan; Singh, Akshay

2016-12-01

Modern commercial InGaN/GaN blue LEDs continue to suffer from efficiency droop, a reduction in efficiency with increasing drive current. External quantum efficiency (EQE) typically peaks at low drive currents (< 10 A cm 2) and drops monotonically at higher current densities, falling to <85% of the peak EQE at a drive current of 100 A cm 2. Mitigating droop-related losses will yield tremendous gains in both luminous efficacy (lumens/W) and cost (lumens/$). Such improvements are critical for continued large-scale market penetration of LED technologies, particularly in high-power and high flux per unit area applications. However, device structures that reduce droopmore » typically require higher indium content and are accompanied by a corresponding degradation in material quality which negates the droop improvement via enhanced Shockley-Read-Hall (SRH) recombination. In this work, we use advanced characterization techniques to identify and classify structural defects in InGaN/GaN quantum well (QW) heterostructures that share features with low-droop designs. Using aberration-corrected scanning transmission electron microscopy (C s-STEM), we find the presence of severe well width fluctuations (WWFs) in a number of low droop device architectures. However, the presence of WWFs does not correlate strongly with external quantum efficiency nor defect densities measured via deep level optical spectroscopy (DLOS). Hence, performance losses in the heterostructures of interest are likely dominated by nanoscale point or interfacial defects rather than large-scale extended defects.« less

Efficiency droop suppression of distance-engineered surface plasmon-coupled photoluminescence in GaN-based quantum well LEDs

NASA Astrophysics Data System (ADS)

Li, Yufeng; Wang, Shuai; Su, Xilin; Tang, Weihan; Li, Qiang; Guo, Maofeng; Zhang, Ye; Zhang, Minyan; Yun, Feng; Hou, Xun

2017-11-01

Ag coated microgroove with extreme large aspect-ratio of 500:1 was fabricated on p-GaN capping layer to investigate the coupling behavior between quantum wells and surface plasmon in highly spatial resolution. Significant photoluminescence enhancement was observed when the distance between Ag film and QWs was reduced from 220 nm to about 20 nm. A maximum enhancement ratio of 18-fold was achieved at the groove bottom where the surface plasmonic coupling was considered the strongest. Such enhancement ratio was found highly affected by the excitation power density. It also shows high correlation to the internal quantum efficiency as a function of coupling effect and a maximum Purcell Factor of 1.75 was estimated at maximum coupling effect, which matches number calculated independently from the time-resolved photoluminescence measurement. With such Purcell Factor, the efficiency was greatly enhanced and the droop was significantly suppressed.

Synthesis and Luminescence Properties of Rare Earth Activated Phosphors for near UV-Emitting LEDs for Efficacious Generation of White Light

NASA Astrophysics Data System (ADS)

Han, Jinkyu

Solid state white-emitting lighting devices based on LEDs outperform conventional light sources in terms of lifetime, durability, and luminous efficiency. Near UV-LEDs in combination with blue-, green-, and red-emitting phosphors show superior luminescence properties over the commercialized blue-emitting LED with yellow-emitting phosphors. However, phosphor development for near UV LEDs is a challenging problem and a vibrant area of research. In addition, using the proper synthesis technique is an important consideration in the development of phosphors. In this research, efficient blue-, green-yellow, red-emitting, and color tunable phosphors for near UV LEDs based white light are identified and prepared by various synthetic methods such as solid state reaction, sol-gel/Pechini, co-precipitation, hydrothermal, combustion and spray-pyrolysis. Blue-emittingLiCaPO4:Eu2+, Green/yellow-emitting (Ba,Sr)2SiO4:Eu2+, color tunable solid solutions of KSrPO4-(Ba,Ca)2SiO4:Eu 2+, and red-emitting (Ba,Sr,Ca)3MgSi2O 8:Eu2+,Mn2+ show excellent excitation profile in the near UV region, high quantum efficiency, and good thermal stability for use in solid state lighting applications. In addition, different synthesis methods are analyzed and compared, with the goal of obtaining ideal phosphors, which should have not only have high luminous output but also optimal particle size (˜150--400 nm) and spherical morphology. For Sr2SiO 4:Eu2+, the sol-gel method appears to be the best method. For Ba2SiO4:Eu2+, the co-precipitation method is be the best. Lastly, the fabrication of core/SiO2 shell particles alleviate surface defects and improve luminescence output and moisture stability of nano and micron sized phosphors. For nano-sized Y2O 3:Eu3+, Y2SiO5:Ce3+,Tb 3+, and (Ba,Sr)2SiO4, the luminescence emission intensity of the core/shell particles were significantly higher than that of bare cores. Additionally, the moisture stability is also improved by SiO 2 shells, the luminescence output of SiO2 coated green emitting Ca3SiO4Cl2:Eu2+ and blue emitting Ca2PO4Cl:Eu2+ phosphors is comparable to that of fresh phosphors although bare phosphors shows significant luminescence quenching after water exposure.

Light-induced lattice expansion leads to high-efficiency perovskite solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsai, Hsinhan; Asadpour, Reza; Blancon, Jean-Christophe

Hybrid-perovskite based high-performance optoelectronic devices and clues from their operation has led to the realization that light-induced structural dynamics play a vital role on their physical properties, device performance and stability. Here, we report that continuous light illumination leads to a uniform lattice expansion in hybrid perovskite thin-films, which is critical for obtaining high-efficiency photovoltaic devices. Correlated, in-situ structural and device characterizations reveal that light-induced lattice expansion significantly benefits the performances of a mixed-cation pure-halide planar device, boosting the power conversion efficiency from 18.5% to 20.5%. This is a direct consequence of the relaxation of local lattice strains during latticemore » expansion, which results in the reduction of the energetic barriers at the perovskite/contact interfaces in devices, thus improving the open circuit voltage and fill factor. The light-induced lattice expansion stabilizes these high-efficiency photovoltaic devices under continuous operation of full-spectrum 1-Sun illumination for over 1500 hours. One Sentence Summary: Light-induced lattice expansion improves crystallinity, relaxes lattice strain, which enhances photovoltaic performance in hybrid perovskite device.« less

GaN-on-Si blue/white LEDs: epitaxy, chip, and package

NASA Astrophysics Data System (ADS)

Qian, Sun; Wei, Yan; Meixin, Feng; Zengcheng, Li; Bo, Feng; Hanmin, Zhao; Hui, Yang

2016-04-01

The dream of epitaxially integrating III-nitride semiconductors on large diameter silicon is being fulfilled through the joint R&D efforts of academia and industry, which is driven by the great potential of GaN-on-silicon technology in improving the efficiency yet at a much reduced manufacturing cost for solid state lighting and power electronics. It is very challenging to grow high quality GaN on Si substrates because of the huge mismatch in the coefficient of thermal expansion (CTE) and the large mismatch in lattice constant between GaN and silicon, often causing a micro-crack network and a high density of threading dislocations (TDs) in the GaN film. Al-composition graded AlGaN/AlN buffer layers have been utilized to not only build up a compressive strain during the high temperature growth for compensating the tensile stress generated during the cool down, but also filter out the TDs to achieve crack-free high-quality n-GaN film on Si substrates, with an X-ray rocking curve linewidth below 300 arcsec for both (0002) and (101¯2) diffractions. Upon the GaN-on-Si templates, prior to the deposition of p-AlGaN and p-GaN layers, high quality InGaN/GaN multiple quantum wells (MQWs) are overgrown with well-engineered V-defects intentionally incorporated to shield the TDs as non-radiative recombination centers and to enhance the hole injection into the MQWs through the via-like structures. The as-grown GaN-on-Si LED wafers are processed into vertical structure thin film LED chips with a reflective p-electrode and the N-face surface roughened after the removal of the epitaxial Si(111) substrates, to enhance the light extraction efficiency. We have commercialized GaN-on-Si LEDs with an average efficacy of 150-160 lm/W for 1mm2 LED chips at an injection current of 350 mA, which have passed the 10000-h LM80 reliability test. The as-produced GaN-on-Si LEDs featured with a single-side uniform emission and a nearly Lambertian distribution can adopt the wafer-level phosphor coating procedure, and are suitable for directional lighting, camera flash, streetlighting, automotive headlamps, and otherlighting applications. Project supported financially by the National Natural Science Foundation of China (Nos. 61522407, 61534007, 61404156), the National High Technology Research and Development Program of China (No. 2015AA03A102), the Science & Technology Program of Jiangsu Province (Nos. BA2015099, BE2012063), the Suzhou Science & Technology Program (No. ZXG2013042), and the Recruitment Program of Global Experts (1000 Youth Talents Plan). Project also supported technically by Nano-X from SINANO, CAS

Dominant transverse-electric polarized emission from 298 nm MBE-grown AlN-delta-GaN quantum well ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Liu, Cheng; Ooi, Yu Kee; Islam, S. M.; Xing, Huili Grace; Jena, Debdeep; Zhang, Jing

2017-02-01

III-nitride based ultraviolet (UV) light emitting diodes (LEDs) are of considerable interest in replacing gas lasers and mercury lamps for numerous applications. Specifically, AlGaN quantum well (QW) based LEDs have been developed extensively but the external quantum efficiencies of which remain less than 10% for wavelengths <300 nm due to high dislocation density, difficult p-type doping and most importantly, the physics and band structure from the three degeneration valence subbands. One solution to address this issue at deep UV wavelengths is by the use of the AlGaN-delta-GaN QW where the insertion of the delta-GaN layer can ensure the dominant conduction band (C) - heavyhole (HH) transition, leading to large transverse-electric (TE) optical output. Here, we proposed and investigated the physics and polarization-dependent optical characterizations of AlN-delta- GaN QW UV LED at 300 nm. The LED structure is grown by Molecular Beam Epitaxy (MBE) where the delta-GaN layer is 3-4 monolayer (QW-like) sandwiched by 2.5-nm AlN sub-QW layers. The physics analysis shows that the use of AlN-delta-GaN QW ensures a larger separation between the top HH subband and lower-energy bands, and strongly localizes the electron and HH wave functions toward the QW center and hence resulting in 30-time enhancement in TEpolarized spontaneous emission rate, compared to that of a conventional Al0.35Ga0.65N QW. The polarization-dependent electroluminescence measurements confirm our theoretical analysis; a dominant TE-polarized emission was obtained at 298 nm with a minimum transverse-magnetic (TM) polarized emission, indicating the feasibility of high-efficiency TEpolarized UV emitters based on our proposed QW structure.

All-solution-processed, multilayered CuInS₂/ZnS colloidal quantum-dot-based electroluminescent device.

PubMed

Kim, Jong-Hoon; Yang, Heesun

2014-09-01

While significant progress of electroluminescent (EL) quantum dot light-emitting diodes (QD-LEDs) that rely exclusively on Cd-containing II-VI quantum dots (QDs) has been reported over the past two decades with respect to device processing and performance, devices based on non-Cd QDs as an active emissive layer (EML) remain at the early stage of development. In this work, utilizing highly luminescent colloidal CuInS2 (CIS)/ZnS QDs, all-solution-processed multilayered QD-LEDs are fabricated by sequentially spin depositing a hole transport layer of poly(9-vinlycarbazole), an EML of CIS/ZnS QDs, and an electron transport layer of ZnO nanoparticles. Our focus in device fabrication is to vary the thickness of the QD EML, which is one of the primary determinants in EL performance but has not been addressed in earlier reports. The device with an optimal EML thickness exhibits a peak luminance of 1564  cd/m2 and current efficiency of 2.52  cd/A. This record value in efficiency is higher by 3-4 times that of CIS QD-LEDs reported previously.

On the AlxGa1-xN/AlyGa1-yN/AlxGa1-xN (x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Li, Luping; Bi, Wengang; Zhang, Zi-Hui

2018-01-01

This work proposes the [0001] oriented AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) possessing a specifically designed p-electron blocking layer (p-EBL) to achieve the high internal quantum efficiency. Both electrons and holes can be efficiently injected into the active region by adopting the Al0.60Ga0.40N/Al0.50Ga0.50N/Al0.60Ga0.40N structured p-EBL, in which a p-Al0.50Ga0.50N layer is embedded into the p-EBL. Moreover, the impact of different thicknesses for the p-Al0.50Ga0.50N insertion layer on the hole and electron injections has also been investigated. Compared with the DUV LED with the bulk p-Al0.60Ga0.40N as the EBL, the proposed LED architectures improve the light output power if the thickness of the p-Al0.50Ga0.50N insertion layer is properly designed.

Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes.

PubMed

Sadaf, S M; Ra, Y-H; Nguyen, H P T; Djavid, M; Mi, Z

2015-10-14

The current LED lighting technology relies on the use of a driver to convert alternating current (AC) to low-voltage direct current (DC) power, a resistive p-GaN contact layer to inject positive charge carriers (holes) for blue light emission, and rare-earth doped phosphors to down-convert blue photons into green/red light, which have been identified as some of the major factors limiting the device efficiency, light quality, and cost. Here, we show that multiple-active region phosphor-free InGaN nanowire white LEDs connected through a polarization engineered tunnel junction can fundamentally address the afore-described challenges. Such a p-GaN contact-free LED offers the benefit of carrier regeneration, leading to enhanced light intensity and reduced efficiency droop. Moreover, through the monolithic integration of p-GaN up and p-GaN down nanowire LED structures on the same substrate, we have demonstrated, for the first time, AC operated LEDs on a Si platform, which can operate efficiently in both polarities (positive and negative) of applied voltage.

Improving confocal microscopy with solid-state semiconductor excitation sources

NASA Astrophysics Data System (ADS)

Sivers, Nelson L.

To efficiently excite the fluorescent dyes used in imaging biological samples with a confocal microscope, the wavelengths of the exciting laser must be near the fluorochrome absorption peak. However, this causes imaging problems when the fluorochrome absorption and emission spectra overlap significantly, i.e. have small Stokes shifts, which is the case for most fluorochromes that emit in the red to infrared. As a result, the reflected laser excitation cannot be distinguished from the information-containing fluorescence signal. However, cryogenically cooling the exciting laser diode enabled the laser emission wavelengths to be tuned to shorter wavelengths, decreasing the interference between the laser and the fluorochrome's fluorescence. This reduced the amount of reflected laser light in the confocal image. However, the cooled laser diode's shorter wavelength signal resulted in slightly less efficient fluorochrome excitation. Spectrophotometric analysis showed that as the laser diodes were cooled, their output power increased, which more than compensated for the lower fluorochrome excitation and resulted in significantly more intense fluorescence. Thus, by tuning the laser diode emission wavelengths away from the fluorescence signal, less reflected laser light and more fluorescence information reached the detector, creating images with better signal to noise ratios. Additionally, new, high, luminous flux, light-emitting diodes (LEDs) are now powerful enough to create confocal fluorescence signals comparable to those produced by the traditional laser excitation sources in fluorescence confocal microscopes. The broader LED spectral response effectively excited the fluorochrome, yet was spectrally limited enough for standard filter sets to separate the LED excitation from the fluorochrome fluorescence signal. Spectrophotometric analysis of the excitation and fluorescence spectra of several fluorochromes showed that high-powered, LED-induced fluorescence contained the same spectral information and could be more intense than that produced by lasers. An alternative, LED-based, confocal microscope is proposed in this thesis that would be capable of exciting multiple fluorochromes in a single specimen, producing images of several distinct cellular components simultaneously. The inexpensive, LED-based, confocal microscope would require lower peak excitation intensities to produce fluorescence signals equal to those produced by laser excitation, reducing cellular damage and slowing fluorochrome photobleaching.

DOE Office of Scientific and Technical Information (OSTI.GOV)

None, None

Snapshot reports use data from DOE's LED Lighting Facts product list to compare the LED performance to standard technologies, and are designed to help lighting retailers, distributors, designers, utilities, energy efficiency program sponsors, and other stakeholders understand the current state of the LED market and its trajectory.

Efficient coding and detection of ultra-long IDs for visible light positioning systems.

PubMed

Zhang, Hualong; Yang, Chuanchuan

2018-05-14

Visible light positioning (VLP) is a promising technique to complement Global Navigation Satellite System (GNSS) such as Global positioning system (GPS) and BeiDou Navigation Satellite System (BDS) which features the advantage of low-cost and high accuracy. The situation becomes even more crucial for indoor environments, where satellite signals are weak or even unavailable. For large-scale application of VLP, there would be a considerable number of Light emitting diode (LED) IDs, which bring forward the demand of long LED ID detection. In particular, to provision indoor localization globally, a convenient way is to program a unique ID into each LED during manufacture. This poses a big challenge for image sensors, such as the CMOS camera in everybody's hands since the long ID covers the span of multiple frames. In this paper, we investigate the detection of ultra-long ID using rolling shutter cameras. By analyzing the pattern of data loss in each frame, we proposed a novel coding technique to improve the efficiency of LED ID detection. We studied the performance of Reed-Solomon (RS) code in this system and designed a new coding method which considered the trade-off between performance and decoding complexity. Coding technique decreases the number of frames needed in data processing, significantly reduces the detection time, and improves the accuracy of detection. Numerical and experimental results show that the detected LED ID can be much longer with the coding technique. Besides, our proposed coding method is proved to achieve a performance close to that of RS code while the decoding complexity is much lower.

(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bai, J., E-mail: j.bai@sheffield.ac.uk; Xu, B.; Guzman, F. G.

2015-12-28

We demonstrate semipolar InGaN single-quantum-well light emitting diodes (LEDs) in the green, yellow-green, yellow and amber spectral region. The LEDs are grown on our overgrown semipolar (11-22) GaN on micro-rod array templates, which are fabricated on (11-22) GaN grown on m-plane sapphire. Electroluminescence measurements on the (11-22) green LED show a reduced blue-shift in the emission wavelength with increasing driving current, compared to a reference commercial c-plane LED. The blue-shifts for the yellow-green and yellow LEDs are also significantly reduced. All these suggest an effective suppression in quantum confined Stark effect in our (11-22) LEDs. On-wafer measurements yield a linearmore » increase in the light output with the current, and external quantum efficiency demonstrates a significant improvement in the efficiency-droop compared to a commercial c-plane LED. Electro-luminescence polarization measurements show a polarization ratio of about 25% in our semipolar LEDs.« less

Ultraviolet light emitting diodes and bio-aerosol sensing

NASA Astrophysics Data System (ADS)

Davitt, Kristina M.

Recent interest in compact ultraviolet (UV) light emitters has produced advances in material quality and device performance from aluminum-rich alloys of the nitride semiconductor system. The epitaxial growth of device structures from this material poses remarkable challenges, and state-of-the-art in semiconductor UV light sources at wavelengths shorter than 350 nm is currently limited to LEDs. A portion of the work presented in this thesis involves the design and characterization of UV LED structures, with particular focus on sub-300 nm LEDs which have only been demonstrated within the last four years. Emphasis has been placed on the integration of early devices with modest efficiencies and output powers into a practical, fluorescence-based bio-sensing instrument. The quality of AlGaInN and AlGaN-based materials is characterized by way of the performance of 340 nm and 290 nm LEDs respectively. A competitive level of device operation is achieved, although much room remains for improvement in the efficiency of light emission from this material system. A preliminary investigation of 300 nm LEDs grown on bulk AIN shows promising electrical and optical characteristics, and illustrates the numerous advantages that this native substrate offers to the epitaxy of wide bandgap nitride semiconductors. The application of UV LEDs to the field of bio-aerosol sensing is pursued by constructing an on-the-fly fluorescence detection system. A linear array of UV LEDs is designed and implemented, and the capability of test devices to excite native fluorescence from bacterial spores is established. In order to fully capitalize on the reduction in size afforded by LEDs, effort is invested in re-engineering the remaining sensor components. Operation of a prototype system for physically sorting bio-aerosols based on fluorescence spectra acquired in real-time from single airborne particles excited by a UV-LED array is demonstrated using the bio-fluorophores NADH and tryptophan. Sensor performance is shown to be ultimately linked to the material quality of high aluminum fraction nitrides, and is expected to show progress as this field matures.

A Sustainable Route from Biomass Byproduct Okara to High Content Nitrogen-Doped Carbon Sheets for Efficient Sodium Ion Batteries.

PubMed

Yang, Tingzhou; Qian, Tao; Wang, Mengfan; Shen, Xiaowei; Xu, Na; Sun, Zhouzhou; Yan, Chenglin

2016-01-20

A sustainable route from the biomass byproduct okara as a natural nitrogen fertilizer to high-content N-doped carbon sheets is demonstrated. The as-prepared unique structure exhibits high specific capacity (292 mAh g(-1) ) and extremely long cycle life (exceeding 2000 cycles). A full battery is devised for the practical use of materials with a flexible/wearable LED screen. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Characterization of an LED based photoreactor to degrade 4-chlorophenol in an aqueous medium using coumarin (C-343) sensitized TiO2.

PubMed

Ghosh, Jyoti P; Langford, Cooper H; Achari, Gopal

2008-10-16

A detailed performance evaluation of a simple high intensity LED based photoreactor exploiting a narrow wavelength range of the LED to match the spectrum of a dye in a photocatalysis system is reported. A dye sensitized (coumarin-343, lambda max = 446 nm) TiO 2 photocatalyst was used for the degradation of 4-chlorophenol (4-CP) in an aqueous medium using the 436 nm LED based photoreactor. The LED reactor performed competitively with a conventional multilamp reactor and sunlight in the degradation of 4-CP. Light intensities entering the reaction vessel were measured by conventional ferrioxalate actinometry. The results can be fitted by approximate first order kinetic behavior in this system. Hydroxyl radicals were detected by spin trapping EPR, and effects of OH radical quenchers on kinetics suggest that the reaction is initiated by these radicals or their equivalents. LEDs operating at competitive intensities offer a number of advantages to the photochemist or the environmental engineer via long life, efficient current to light conversion, narrow bandwidth, forward directed output, and direct current power for remote operation. Matching light source spectrum to chromophore is a key.

Design of compact freeform lens for application specific Light-Emitting Diode packaging.

PubMed

Wang, Kai; Chen, Fei; Liu, Zongyuan; Luo, Xiaobing; Liu, Sheng

2010-01-18

Application specific LED packaging (ASLP) is an emerging technology for high performance LED lighting. We introduced a practical design method of compact freeform lens for extended sources used in ASLP. A new ASLP for road lighting was successfully obtained by integrating a polycarbonate compact freeform lens of small form factor with traditional LED packaging. Optical performance of the ASLP was investigated by both numerical simulation based on Monte Carlo ray tracing method and experiments. Results demonstrated that, comparing with traditional LED module integrated with secondary optics, the ASLP had advantages of much smaller size in volume (approximately 1/8), higher system lumen efficiency (approximately 8.1%), lower cost and more convenience for customers to design and assembly, enabling possible much wider applications of LED for general road lighting. Tolerance analyses were also conducted. Installation errors of horizontal and vertical deviations had more effects on the shape and uniformity of radiation pattern compared with rotational deviation. The tolerances of horizontal, vertical and rotational deviations of this lens were 0.11 mm, 0.14 mm and 2.4 degrees respectively, which were acceptable in engineering.

LED Systems Target Plant Growth

NASA Technical Reports Server (NTRS)

2010-01-01

To help develop technologies for growing edible biomass (food crops) in space, Kennedy Space Center partnered with Orbital Technologies Corporation (ORBITEC), of Madison, Wisconsin, through the Small Business Innovation Research (SBIR) program. One result of this research was the High Efficiency Lighting with Integrated Adaptive Control (HELIAC) system, components of which have been incorporated into a variety of agricultural greenhouse and consumer aquarium lighting features. The new lighting systems can be adapted to a specific plant species during a specific growth stage, allowing maximum efficiency in light absorption by all available photosynthetic tissues.

The Effect of Spectral Quality on Daily Patterns of Gas Exchange, Biomass Gain, and Water-Use-Efficiency in Tomatoes and Lisianthus: An Assessment of Whole Plant Measurements

PubMed Central

Lanoue, Jason; Leonardos, Evangelos D.; Ma, Xiao; Grodzinski, Bernard

2017-01-01

Advancements in light-emitting diode (LED) technology have made them a viable alternative to current lighting systems for both sole and supplemental lighting requirements. Understanding how wavelength specific LED lighting can affect plants is thus an area of great interest. Much research is available on the wavelength specific responses of leaves from multiple crops when exposed to long-term wavelength specific lighting. However, leaf measurements do not always extrapolate linearly to the complexities which are found within a whole plant canopy, namely mutual shading and leaves of different ages. Taken together, both tomato (Solanum lycopersicum) leaves under short-term illumination and lisianthus (Eustoma grandiflorum) and tomato whole plant diurnal patterns of plants acclimated to specific lighting indicate wavelength specific responses of both H2O and CO2 gas exchanges involved in the major growth parameters of a plant. Tomato leaves grown under a white light source indicated an increase in transpiration rate and internal CO2 concentration and a subsequent decrease in water-use-efficiency (WUE) when exposed to a blue LED light source compared to a green LED light source. Interestingly, the maximum photosynthetic rate was observed to be similar. Using plants grown under wavelength specific supplemental lighting in a greenhouse, a decrease in whole plant WUE was seen in both crops under both red-blue (RB) and red-white (RW) LEDs when compared to a high pressure sodium (HPS) light. Whole plant WUE was decreased by 31% under the RB LED treatment for both crops compared to the HPS treatment. Tomato whole plant WUE was decreased by 25% and lisianthus whole plant WUE was decreased by 15% when compared to the HPS treatment when grown under RW LED. The understanding of the effects of wavelength specific lighting on both leaf and whole plant gas exchange has significant implications on basic academic research as well as commercial greenhouse production. PMID:28676816

The Effect of Spectral Quality on Daily Patterns of Gas Exchange, Biomass Gain, and Water-Use-Efficiency in Tomatoes and Lisianthus: An Assessment of Whole Plant Measurements.

PubMed

Lanoue, Jason; Leonardos, Evangelos D; Ma, Xiao; Grodzinski, Bernard

2017-01-01

Advancements in light-emitting diode (LED) technology have made them a viable alternative to current lighting systems for both sole and supplemental lighting requirements. Understanding how wavelength specific LED lighting can affect plants is thus an area of great interest. Much research is available on the wavelength specific responses of leaves from multiple crops when exposed to long-term wavelength specific lighting. However, leaf measurements do not always extrapolate linearly to the complexities which are found within a whole plant canopy, namely mutual shading and leaves of different ages. Taken together, both tomato ( Solanum lycopersicum ) leaves under short-term illumination and lisianthus ( Eustoma grandiflorum ) and tomato whole plant diurnal patterns of plants acclimated to specific lighting indicate wavelength specific responses of both H 2 O and CO 2 gas exchanges involved in the major growth parameters of a plant. Tomato leaves grown under a white light source indicated an increase in transpiration rate and internal CO 2 concentration and a subsequent decrease in water-use-efficiency (WUE) when exposed to a blue LED light source compared to a green LED light source. Interestingly, the maximum photosynthetic rate was observed to be similar. Using plants grown under wavelength specific supplemental lighting in a greenhouse, a decrease in whole plant WUE was seen in both crops under both red-blue (RB) and red-white (RW) LEDs when compared to a high pressure sodium (HPS) light. Whole plant WUE was decreased by 31% under the RB LED treatment for both crops compared to the HPS treatment. Tomato whole plant WUE was decreased by 25% and lisianthus whole plant WUE was decreased by 15% when compared to the HPS treatment when grown under RW LED. The understanding of the effects of wavelength specific lighting on both leaf and whole plant gas exchange has significant implications on basic academic research as well as commercial greenhouse production.

New illuminations approaches with single-use micro LEDs endoilluminators for the pars plana vitrectomy

NASA Astrophysics Data System (ADS)

Koelbl, Philipp Simon; Koch, Frank H. J.; Lingenfelder, Christian; Hessling, Martin

2018-02-01

The illumination of the intraocular space during pars plana vitrectomy always bears the risk of retina damage by irradiation. Conventional illumination systems consist of an external light source and an optical fiber to transfer the visible light (radiation) into the eye. Often xenon arc and halogen lamps are employed for this application with some disadvantageous properties like high phototoxicity and low efficiency. Therefore, we propose to generate the light directly within the eye by inserting a white micro LED with a diameter of 0.6 mm. The LED offers a luminous flux of 0.6 lm of white light with a blue peak @ 450 nm and a yellow peak @ 555 nm. The presented prototypes fit through a standard 23 G trocar and are the first intraocular light sources worldwide. Two different single-use approaches have already been developed: a handguided and a chandelier device. The hand-guided applicator enables a directly navigation and illumination up to a working distance of 6 mm. The chandelier device is much smaller and does not need an active navigation of the light cone. The brightness and homogeneity of the illumination of these LED devices have been successfully tested on porcine eyes. Presented measurements and calculations prove that even for high LED currents and small distances to the retina these intraocular micro LED devices expose the retina to less hazard than conventional illumination sources like fiber based xenon systems. Even under the worst circumstances application durations of 180 hours would be justifiable.

The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes

NASA Astrophysics Data System (ADS)

Hopkins, M. A.; Allsopp, D. W. E.; Kappers, M. J.; Oliver, R. A.; Humphreys, C. J.

2017-12-01

The efficiency of light emitting diodes (LEDs) remains a topic of great contemporary interest due to their potential to reduce the amount of energy consumed in lighting. The current consensus is that electrons and holes distribute themselves through the emissive region by a drift-diffusion process which results in a highly non-uniform distribution of the light emission and can reduce efficiency. In this paper, the measured variations in the external quantum efficiency of a range of InGaN/GaN LEDs with different numbers of quantum wells (QWs) are shown to compare closely with the predictions of a revised ABC model, in which it is assumed that the electrically injected electrons and holes are uniformly distributed through the multi-quantum well (MQW) region, or nearly so, and hence carrier recombination occurs equally in all the quantum wells. The implications of the reported results are that drift-diffusion plays a far lesser role in cross-well carrier transport than previously thought; that the dominant cause of efficiency droop is intrinsic to the quantum wells and that reductions in the density of non-radiative recombination centers in the MQW would enable the use of more QWs and thereby reduce Auger losses by spreading carriers more evenly across a wider emissive region.

A 1024-channel 6 mW/mm2 optical stimulator for in-vitro neuroscience experiments.

PubMed

Cai, Lei; Wang, Baitong; Huang, Xiuxiang; Yang, Zhi

2014-01-01

Recent optical stimulation technologies allow improved selectivity and have been widely used in neuroscience research. This paper presents an optical stimulator based on high power LEDs. It has 1024 channels and can produce flexible stimulation patterns in each frame, refreshed at above 20 Hz. To increase the light intensity, each LED has an optical package that directs the light into a small angle. To ensure the light of each LED can reach the lens, the LEDs have been specially placed and oriented to the lens. With these efforts, the achieved power efficiency (defined as the mount of LED light power passing through the lens divided by the LED total power consumption) is 5 × 10(-5). In our current prototype, an individual LED unit can source 60 mW electrical power, where the induced irradiance on neural tissues is 6 mW/mm(2) integrating from 460 nm to 480 nm. The light spot is tunable in size from 18 μm to 40 μm with an extra 5-10 μm separation for isolating two adjacent spots. Through both bench-top measurement and finite element simulation, we found the cross channel interference is below 10%. A customized software interface has been developed to control and program the stimulator operation.

Toward scatter-free phosphors in white phosphor-converted light-emitting diodes

PubMed Central

Park, Hoo Keun; Oh, Ji Hye; Rag Do, Young

2012-01-01

Scatter-free phosphors promise to suppress the scattering loss of conventional micro-size powder phosphors in white phosphor-converted light-emitting diodes (pc-LEDs). Large micro-size cube phosphors (~100 μm) are newly designed and prepared as scatter-free phosphors, combining the two scatter-free conditions of particles based on Mie’s scattering theory; the grain size or grain boundary was smaller than 50 nm and the particle size was larger than 30 μm. A careful evaluation of the conversion efficiency and packaging efficiency of the large micro-size cube phosphor-based white pc-LED demonstrated that large micro-size cube phosphors are an outstanding potential candidate for scatter-free phosphors in white pc-LEDs. The luminous efficacy and packaging efficiency of the Y3Al5O12:Ce3+ large micro-size cube phosphor-based pc-LEDs were 123.0 lm/W and 0.87 at 4300 K under 300 mA, which are 17% and 34% higher than those of commercial powder phosphor-based white LEDs (104.8 lm/W and 0.65), respectively. In addition, the introduction of large micro-size cube phosphors can reduce the wide variation in optical properties as a function of both the ambient temperature and applied current compared with those of conventional powder phosphor-based white LEDs. PMID:22535113

Potential environmental impacts from the metals in incandescent, compact fluorescent lamp (CFL), and light-emitting diode (LED) bulbs.

PubMed

Lim, Seong-Rin; Kang, Daniel; Ogunseitan, Oladele A; Schoenung, Julie M

2013-01-15

Artificial lighting systems are transitioning from incandescent to compact fluorescent lamp (CFL) and light-emitting diode (LED) bulbs in response to the U.S. Energy Independence and Security Act and the EU Ecodesign Directive, which leads to energy savings and reduced greenhouse gas emissions. Although CFLs and LEDs are more energy-efficient than incandescent bulbs, they require more metal-containing components. There is uncertainty about the potential environmental impacts of these components and whether special provisions must be made for their disposal at the end of useful life. Therefore, the objective of this study is to analyze the resource depletion and toxicity potentials from the metals in incandescent, CFL, and LED bulbs to complement the development of sustainable energy policy. We assessed the potentials by examining whether the lighting products are to be categorized as hazardous waste under existing U.S. federal and California state regulations and by applying life cycle impact-based and hazard-based assessment methods (note that "life cycle impact-based method" does not mean a general life cycle assessment (LCA) but rather the elements in LCA used to quantify toxicity potentials). We discovered that both CFL and LED bulbs are categorized as hazardous, due to excessive levels of lead (Pb) leachability (132 and 44 mg/L, respectively; regulatory limit: 5) and the high contents of copper (111,000 and 31,600 mg/kg, respectively; limit: 2500), lead (3860 mg/kg for the CFL bulb; limit: 1000), and zinc (34,500 mg/kg for the CFL bulb; limit: 5000), while the incandescent bulb is not hazardous (note that the results for CFL bulbs excluded mercury vapor not captured during sample preparation). The CFLs and LEDs have higher resource depletion and toxicity potentials than the incandescent bulb due primarily to their high aluminum, copper, gold, lead, silver, and zinc. Comparing the bulbs on an equivalent quantity basis with respect to the expected lifetimes of the bulbs, the CFLs and LEDs have 3-26 and 2-3 times higher potential impacts than the incandescent bulb, respectively. We conclude that in addition to enhancing energy efficiency, conservation and sustainability policies should focus on the development of technologies that reduce the content of hazardous and rare metals in lighting products without compromising their performance and useful lifespan.

Light-Emitting Diodes Based on Colloidal Silicon Quantum Dots with Octyl and Phenylpropyl Ligands.

PubMed

Liu, Xiangkai; Zhao, Shuangyi; Gu, Wei; Zhang, Yuting; Qiao, Xvsheng; Ni, Zhenyi; Pi, Xiaodong; Yang, Deren

2018-02-14

Colloidal silicon quantum dots (Si QDs) hold ever-growing promise for the development of novel optoelectronic devices such as light-emitting diodes (LEDs). Although it has been proposed that ligands at the surface of colloidal Si QDs may significantly impact the performance of LEDs based on colloidal Si QDs, little systematic work has been carried out to compare the performance of LEDs that are fabricated using colloidal Si QDs with different ligands. Here, colloidal Si QDs with rather short octyl ligands (Octyl-Si QDs) and phenylpropyl ligands (PhPr-Si QDs) are employed for the fabrication of LEDs. It is found that the optical power density of PhPr-Si QD LEDs is larger than that of Octyl-Si QD LEDs. This is due to the fact that the surface of PhPr-Si QDs is more oxidized and less defective than that of Octyl-Si QDs. Moreover, the benzene rings of phenylpropyl ligands significantly enhance the electron transport of QD LEDs. It is interesting that the external quantum efficiency (EQE) of PhPr-Si QD LEDs is lower than that of Octyl-Si QD LEDs because the benzene rings of phenylpropyl ligands suppress the hole transport of QD LEDs. The unbalance between the electron and hole injection in PhPr-Si QD LEDs is more serious than that in Octyl-Si QD LEDs. The currently obtained highest optical power density of ∼0.64 mW/cm 2 from PhPr-Si QD LEDs and highest EQE of ∼6.2% from Octyl-Si QD LEDs should encourage efforts to further advance the development of high-performance optoelectronic devices based on colloidal Si QDs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lisitsyn, V. M.; Stepanov, S. A., E-mail: stepanovsa@tpu.ru; Yangyang, Ju

In most promising widespread gallium nitride based LEDs emission is generated in the blue spectral region with a maximum at about 450 nm which is converted to visible light with the desired spectrum by means of phosphor. The thermal energy in the conversion is determined by the difference in the energies of excitation and emission quanta and the phosphor quantum yield. Heat losses manifest themselves as decrease in the luminous efficacy. LED heating significantly reduces its efficiency and life. In addition, while heating, the emission generation output and the efficiency of the emission conversion decrease. Therefore, the reduction of the energymore » losses caused by heating is crucial for LED development. In this paper, heat losses in phosphor-converted LEDs (hereinafter chips) during spectrum conversion are estimated. The limit values of the luminous efficacy for white LEDs are evaluated.« less

Thermal and Structural Analysis of Micro-Fabricated Involute Regenerators

NASA Astrophysics Data System (ADS)

Qiu, Songgang; Augenblick, Jack E.

2005-02-01

Long-life, high-efficiency power generators based on free-piston Stirling engines are an energy conversion solution for future space power generation and commercial applications. As part of the efforts to further improve Stirling engine efficiency and reliability, a micro-fabricated, involute regenerator structure is proposed by a Cleveland State University-led regenerator research team. This paper reports on thermal and structural analyses of the involute regenerator to demonstrate the feasibility of the proposed regenerator. The results indicate that the involute regenerator has extremely high axial stiffness to sustain reasonable axial compression forces with negligible lateral deformation. The relatively low radial stiffness may impose some challenges to the appropriate installation of the in-volute regenerators.

Wheat Under LED's (Light Emitting Diodes)

NASA Technical Reports Server (NTRS)

2004-01-01

Astroculture is a suite of technologies used to produce and maintain a closed controlled environment for plant growth. The two most recent missions supported growth of potato, dwarf wheat, and mustard plants, and provided scientists with the first opportunity to conduct true plant research in space. Light emitting diodes have particular usefulness for plant growth lighting because they emit a much smaller amount of radiant heat than do conventional lighting sources and because they have potential of directing a higher percentage of the emitted light onto plants surfaces. Furthermore, the high output LED's have emissions in the 600-700 nm waveband, which is of highest efficiency for photosynthesis by plants.

Enhanced Optical and Electrical Properties of Polymer-Assisted All-Inorganic Perovskites for Light-Emitting Diodes.

PubMed

Ling, Yichuan; Tian, Yu; Wang, Xi; Wang, Jamie C; Knox, Javon M; Perez-Orive, Fernando; Du, Yijun; Tan, Lei; Hanson, Kenneth; Ma, Biwu; Gao, Hanwei

2016-10-01

Highly bright light-emitting diodes based on solution-processed all-inorganic perovskite thin film are demonstrated. The cesium lead bromide (CsPbBr 3 ) created using a new poly(ethylene oxide)-additive spin-coating method exhibits photoluminescence quantum yield up to 60% and excellent uniformity of electrical current distribution. Using the smooth CsPbBr 3 films as emitting layers, green perovskite-based light-emitting diodes (PeLEDs) exhibit electroluminescent brightness and efficiency above 53 000 cd m -2 and 4%: a new benchmark of device performance for all-inorganic PeLEDs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

In Situ-Grown ZnCo2O4 on Single-Walled Carbon Nanotubes as Air Electrode Materials for Rechargeable Lithium–Oxygen Batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Bin; Xu, Wu; Yan, Pengfei

2015-10-12

Although lithium-oxygen (Li-O2) batteries have great potential to be used as one of the next generation energy storage systems due to their ultrahigh theoretical specific energy, there are still many significant barriers before their practical applications. These barriers include electrolyte and electrode instability, poor ORR/OER efficiency and cycling capability, etc. Development of a highly efficient catalyst will not only enhance ORR/OER efficiency, it may also improve the stability of electrolyte because the reduced charge voltage. Here we report the synthesis of nano-sheet-assembled ZnCo2O4 spheres/single walled carbon nanotubes (ZCO/SWCNTs) composites as high performance air electrode materials for Li-O2 batteries. The ZCOmore » catalyzed SWCNTs electrodes delivered high discharge capacities, decreased the onset of oxygen evolution reaction by 0.9 V during charge processes, and led to more stable cycling stability. These results indicate that ZCO/SWCNTs composite can be used as highly efficient air electrode for oxygen reduction and evolution reactions. The highly enhanced catalytic activity by uniformly dispersed ZnCo2O4 catalyst on nanostructured electrodes is expected to inspire« less

Improving the optical performance of InGaN light-emitting diodes by altering light reflection and refraction with triangular air prism arrays.

PubMed

Kang, Ji Hye; Kim, Hyung Gu; Chandramohan, S; Kim, Hyun Kyu; Kim, Hee Yun; Ryu, Jae Hyoung; Park, Young Jae; Beak, Yun Seon; Lee, Jeong-Sik; Park, Joong Seo; Lysak, Volodymyr V; Hong, Chang-Hee

2012-01-01

The effect of triangular air prism (TAP) arrays with different distance-to-width (d/w) ratios on the enhancement of light extraction efficiency (LEE) of InGaN light-emitting diodes (LEDs) is investigated. The TAP arrays embedded at the sapphire/GaN interface act as light reflectors and refractors, and thereby improve the light output power due to the redirection of light into escape cones on both the front and back sides of the LED. Enhancement in radiometric power as high as 117% and far-field angle as low as 129° are realized with a compact arrangement of TAP arrays compared with that of a conventional LED made without TAP arrays under an injection current of 20 mA. © 2012 Optical Society of America

Design of axisymmetrical tailored concentrators for LED light source applications

NASA Astrophysics Data System (ADS)

Van Giel, Bart; Meuret, Youri; Thienpont, Hugo

2006-04-01

In our contribution we present a solution to an important question in the design of a LED-based illumination engine for projection systems: the collimation of the LED light. We tested the principle in the modification of a common device in non-imaging optics, the compound Parabolic Concentrator. This CPC-like achieves a collection of 72% (ideal reflective coating presumed). This CPC-like was tailored by numerically solving an differential equation. This approach has some serious drawbacks. For a compact collection device with high collimation, an other approach is required. A more elegant design strategy will rely fully on geometrical principles. The result of our work is a compound collection lens that achieves a collection efficiency of 87%, assuming an ideal reflective coating and neglecting Fresnel losses. We study the performance of this device in detail. Further enhancements are suggested.

Rare-Earth Activated Nitride Phosphors: Synthesis, Luminescence and Applications

PubMed Central

Xie, Rong-Jun; Hirosaki, Naoto; Li, Yuanqiang; Takeda, Takashi

2010-01-01

Nitridosilicates are structurally built up on three-dimensional SiN4 tetrahedral networks, forming a very interesting class of materials with high thermomechanical properties, hardness, and wide band gap. Traditionally, nitridosilicates are often used as structural materials such as abrasive particles, cutting tools, turbine blade, etc. Recently, the luminescence of rare earth doped nitridosilicates has been extensively studied, and a novel family of luminescent materials has been developed. This paper reviews the synthesis, luminescence and applications of nitridosilicate phosphors, with emphasis on rare earth nitrides in the system of M-Si-Al-O-N (M = Li, Ca, Sr, Ba, La) and their applications in white LEDs. These phosphors exhibit interesting luminescent properties, such as red-shifted excitation and emission, small Stokes shift, small thermal quenching, and high conversion efficiency, enabling them to use as down-conversion luminescent materials in white LEDs with tunable color temperature and high color rendering index.

Resonant cavity light-emitting diodes based on dielectric passive cavity structures

NASA Astrophysics Data System (ADS)

Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Zschiedrich, L.; Schmidt, F.; Ledentsov, N. N.

2017-02-01

A novel design for high brightness planar technology light-emitting diodes (LEDs) and LED on-wafer arrays on absorbing substrates is proposed. The design integrates features of passive dielectric cavity deposited on top of an oxide- semiconductor distributed Bragg reflector (DBR), the p-n junction with a light emitting region is introduced into the top semiconductor λ/4 DBR period. A multilayer dielectric structure containing a cavity layer and dielectric DBRs is further processed by etching into a micrometer-scale pattern. An oxide-confined aperture is further amended for current and light confinement. We study the impact of the placement of the active region into the maximum or minimum of the optical field intensity and study an impact of the active region positioning on light extraction efficiency. We also study an etching profile composed of symmetric rings in the etched passive cavity over the light emitting area. The bottom semiconductor is an AlGaAs-AlAs multilayer DBR selectively oxidized with the conversion of the AlAs layers into AlOx to increase the stopband width preventing the light from entering the semiconductor substrate. The approach allows to achieve very high light extraction efficiency in a narrow vertical angle keeping the reasonable thermal and current conductivity properties. As an example, a micro-LED structure has been modeled with AlGaAs-AlAs or AlGaAs-AlOx DBRs and an active region based on InGaAlP quantum well(s) emitting in the orange spectral range at 610 nm. A passive dielectric SiO2 cavity is confined by dielectric Ta2O5/SiO2 and AlGaAs-AlOx DBRs. Cylindrically-symmetric structures with multiple ring patterns are modeled. It is demonstrated that the extraction coefficient of light to the air can be increased from 1.3% up to above 90% in a narrow vertical angle (full width at half maximum (FWHM) below 20°). For very small oxide-confined apertures 100nm the narrowing of the FWHM for light extraction can be reduced down to 5°. Consequently high efficiency high brightness arrays of micro-LEDs becomes possible. For single emitters the approach is particularly interesting for oscillator strength engineering allowing high speed data transmission and for single photonics applying single quantum dot (QD) emitters and allowing >90% coupling of the emission into single mode fiber. We also note that for longer wavelength ( 1300nm) QDs the thickness of the layers and surface patterns significantly increase allowing greatly reduced processing tolerances and applying further simplifications due to the possibility of using high contrast GaAs-AlOx DBRs.

Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Liwen, E-mail: lwcheng@yzu.edu.cn; Chen, Haitao; Wu, Shudong

2015-08-28

The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droopmore » was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure.« less

Investigation of advanced pre- and post-equalization schemes in high-order CAP modulation based high-speed indoor VLC transmission system

NASA Astrophysics Data System (ADS)

Wang, Yiguang; Chi, Nan

2016-10-01

Light emitting diodes (LEDs) based visible light communication (VLC) has been considered as a promising technology for indoor high-speed wireless access, due to its unique advantages, such as low cost, license free and high security. To achieve high-speed VLC transmission, carrierless amplitude and phase (CAP) modulation has been utilized for its lower complexity and high spectral efficiency. Moreover, to compensate the linear and nonlinear distortions such as frequency attenuation, sampling time offset, LED nonlinearity etc., series of pre- and post-equalization schemes should be employed in high-speed VLC systems. In this paper, we make an investigation on several advanced pre- and postequalization schemes for high-order CAP modulation based VLC systems. We propose to use a weighted preequalization technique to compensate the LED frequency attenuation. In post-equalization, a hybrid post equalizer is proposed, which consists of a linear equalizer, a Volterra series based nonlinear equalizer, and a decision-directed least mean square (DD-LMS) equalizer. Modified cascaded multi-modulus algorithm (M-CMMA) is employed to update the weights of the linear and the nonlinear equalizer, while DD-LMS can further improve the performance after the preconvergence. Based on high-order CAP modulation and these equalization schemes, we have experimentally demonstrated a 1.35-Gb/s, a 4.5-Gb/s and a 8-Gb/s high-speed indoor VLC transmission systems. The results show the benefit and feasibility of the proposed equalization schemes for high-speed VLC systems.

CALiPER Snapshot Report: Troffers

DOE Office of Scientific and Technical Information (OSTI.GOV)

None, None

2016-12-01

Snapshot reports use data from DOE's LED Lighting Facts product list to compare the LED performance to standard technologies, and are designed to help lighting retailers, distributors, designers, utilities, energy efficiency program sponsors, and other stakeholders understand the current state of the LED market and its trajectory.

CALiPER Snapshot Report: Industrial Luminaires

DOE Office of Scientific and Technical Information (OSTI.GOV)

None, None

2017-03-01

Snapshot reports use data from DOE's LED Lighting Facts product list to compare the LED performance to standard technologies, and are designed to help lighting retailers, distributors, designers, utilities, energy efficiency program sponsors, and other stakeholders understand the current state of the LED market and its trajectory.

Asymmetric 1,2-perfluoroalkyl migration: easy access to enantioenriched α-hydroxy-α-perfluoroalkyl esters.

PubMed

Wang, Pan; Feng, Liang-Wen; Wang, Lijia; Li, Jun-Fang; Liao, Saihu; Tang, Yong

2015-04-15

This study has led to the development of a novel, highly efficient, 1,2-perfluoro-alkyl/-aryl migration process in reactions of hydrate of 1-perfluoro-alkyl/-aryl-1,2-diketones with alcohols, which are promoted by a Zn(II)/bisoxazoline and form α-perfluoro-alkyl/-aryl-substituted α-hydroxy esters. With (-)-8-phenylmenthol as the alcohol, the corresponding menthol esters are generated in high yields with excellent levels of diastereoselectivity. The mechanistic studies show that the benzilic ester-type rearrangement reaction takes place via an unusual 1,2-migration of electron-deficient trifluoromethyl group rather than the phenyl group. The overall process serves as a novel, efficient, and simple approach for the synthesis of highly enantioenriched, biologically relevant α-hydroxy-α-perfluoroalkyl carboxylic acid derivatives.

Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes

NASA Astrophysics Data System (ADS)

Barettin, Daniele; Auf der Maur, Matthias; di Carlo, Aldo; Pecchia, Alessandro; Tsatsulnikov, Andrei F.; Lundin, Wsevolod V.; Sakharov, Alexei V.; Nikolaev, Andrei E.; Korytov, Maxim; Cherkashin, Nikolay; Hÿtch, Martin J.; Karpov, Sergey Yu

2017-07-01

We present a study of blue III-nitride light-emitting diodes (LEDs) with multiple quantum well (MQW) and quantum dot (QD) active regions (ARs), comparing experimental and theoretical results. The LED samples were grown by metalorganic vapor phase epitaxy, utilizing growth interruption in the hydrogen/nitrogen atmosphere and variable reactor pressure to control the AR microstructure. Realistic configuration of the QD AR implied in simulations was directly extracted from HRTEM characterization of the grown QD-based structures. Multi-scale 2D simulations of the carrier transport inside the multiple QD AR have revealed a non-trivial pathway for carrier injection into the dots. Electrons and holes are found to penetrate deep into the multi-layer AR through the gaps between individual QDs and get into the dots via their side edges rather than via top and bottom interfaces. This enables a more homogeneous carrier distribution among the dots situated in different layers than among the laterally uniform quantum well (QWs) in the MQW AR. As a result, a lower turn-on voltage is predicted for QD-based LEDs, as compared to MQW ones. Simulations did not show any remarkable difference in the efficiencies of the MQW and QD-based LEDs, if the same recombination coefficients are utilized, i.e. a similar crystal quality of both types of LED structures is assumed. Measurements of the current-voltage characteristics of LEDs with both kinds of the AR have shown their close similarity, in contrast to theoretical predictions. This implies the conventional assumption of laterally uniform QWs not to be likely an adequate approximation for the carrier transport in MQW LED structures. Optical characterization of MQW and QD-based LEDs has demonstrated that the later ones exhibit a higher efficiency, which could be attributed to better crystal quality of the grown QD-based structures. The difference in the crystal quality explains the recently observed correlation between the growth pressure of LED structures and their efficiency and should be taken into account while further comparing performances of MQW and QD-based LEDs. In contrast to experimental results, our simulations did not reveal any advantages of using QD-based ARs over the MQW ones, if the same recombination constants are assumed for both cases. This fact demonstrates importance of accounting for growth-dependent factors, like crystal quality, which may limit the device performance. Nevertheless, a more uniform carrier injection into multi-layer QD ARs predicted by modeling may serve as the basis for further improvement of LED efficiency by lowering carrier density in individual QDs and, hence, suppressing the Auger recombination losses.

Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes.

PubMed

Barettin, Daniele; Auf der Maur, Matthias; di Carlo, Aldo; Pecchia, Alessandro; Tsatsulnikov, Andrei F; Lundin, Wsevolod V; Sakharov, Alexei V; Nikolaev, Andrei E; Korytov, Maxim; Cherkashin, Nikolay; Hÿtch, Martin J; Karpov, Sergey Yu

2017-07-07

We present a study of blue III-nitride light-emitting diodes (LEDs) with multiple quantum well (MQW) and quantum dot (QD) active regions (ARs), comparing experimental and theoretical results. The LED samples were grown by metalorganic vapor phase epitaxy, utilizing growth interruption in the hydrogen/nitrogen atmosphere and variable reactor pressure to control the AR microstructure. Realistic configuration of the QD AR implied in simulations was directly extracted from HRTEM characterization of the grown QD-based structures. Multi-scale 2D simulations of the carrier transport inside the multiple QD AR have revealed a non-trivial pathway for carrier injection into the dots. Electrons and holes are found to penetrate deep into the multi-layer AR through the gaps between individual QDs and get into the dots via their side edges rather than via top and bottom interfaces. This enables a more homogeneous carrier distribution among the dots situated in different layers than among the laterally uniform quantum well (QWs) in the MQW AR. As a result, a lower turn-on voltage is predicted for QD-based LEDs, as compared to MQW ones. Simulations did not show any remarkable difference in the efficiencies of the MQW and QD-based LEDs, if the same recombination coefficients are utilized, i.e. a similar crystal quality of both types of LED structures is assumed. Measurements of the current-voltage characteristics of LEDs with both kinds of the AR have shown their close similarity, in contrast to theoretical predictions. This implies the conventional assumption of laterally uniform QWs not to be likely an adequate approximation for the carrier transport in MQW LED structures. Optical characterization of MQW and QD-based LEDs has demonstrated that the later ones exhibit a higher efficiency, which could be attributed to better crystal quality of the grown QD-based structures. The difference in the crystal quality explains the recently observed correlation between the growth pressure of LED structures and their efficiency and should be taken into account while further comparing performances of MQW and QD-based LEDs. In contrast to experimental results, our simulations did not reveal any advantages of using QD-based ARs over the MQW ones, if the same recombination constants are assumed for both cases. This fact demonstrates importance of accounting for growth-dependent factors, like crystal quality, which may limit the device performance. Nevertheless, a more uniform carrier injection into multi-layer QD ARs predicted by modeling may serve as the basis for further improvement of LED efficiency by lowering carrier density in individual QDs and, hence, suppressing the Auger recombination losses.

Enhancement of mosquito trapping efficiency by using pulse width modulated light emitting diodes.

PubMed

Liu, Yu-Nan; Liu, Yu-Jen; Chen, Yi-Chian; Ma, Hsin-Yi; Lee, Hsiao-Yi

2017-01-06

In this study, a light-driving bug zapper is presented for well controlling the diseases brought by insects, such as mosquitoes. In order to have the device efficient to trap the insect pests in off-grid areas, pulse width modulated light emitting diodes (PWM-LED) combined with a solar power module are proposed and implemented. With specific PWM electric signals to drive the LED, it is found that no matter what the ability of catching insects or the consumed power efficiency can be enhanced thus. It is demonstrated that 40% of the UV LED consumed power and 25.9% of the total load power consumption can be saved, and the trapped mosquitoes are about 250% increased when the PWM method is applied in the bug zapper experiments.

Enhancement of mosquito trapping efficiency by using pulse width modulated light emitting diodes

NASA Astrophysics Data System (ADS)

Liu, Yu-Nan; Liu, Yu-Jen; Chen, Yi-Chian; Ma, Hsin-Yi; Lee, Hsiao-Yi

2017-01-01

In this study, a light-driving bug zapper is presented for well controlling the diseases brought by insects, such as mosquitoes. In order to have the device efficient to trap the insect pests in off-grid areas, pulse width modulated light emitting diodes (PWM-LED) combined with a solar power module are proposed and implemented. With specific PWM electric signals to drive the LED, it is found that no matter what the ability of catching insects or the consumed power efficiency can be enhanced thus. It is demonstrated that 40% of the UV LED consumed power and 25.9% of the total load power consumption can be saved, and the trapped mosquitoes are about 250% increased when the PWM method is applied in the bug zapper experiments.

Enhancement of mosquito trapping efficiency by using pulse width modulated light emitting diodes

PubMed Central

Liu, Yu-Nan; Liu, Yu-Jen; Chen, Yi-Chian; Ma, Hsin-Yi; Lee, Hsiao-Yi

2017-01-01

In this study, a light-driving bug zapper is presented for well controlling the diseases brought by insects, such as mosquitoes. In order to have the device efficient to trap the insect pests in off-grid areas, pulse width modulated light emitting diodes (PWM-LED) combined with a solar power module are proposed and implemented. With specific PWM electric signals to drive the LED, it is found that no matter what the ability of catching insects or the consumed power efficiency can be enhanced thus. It is demonstrated that 40% of the UV LED consumed power and 25.9% of the total load power consumption can be saved, and the trapped mosquitoes are about 250% increased when the PWM method is applied in the bug zapper experiments. PMID:28059148

Photometric optimization and comparison of hybrid white LEDs for mesopic road lighting.

PubMed

Zhang, Chuanwen; Xiao, Licai; Zhong, Ping; He, Guoxing

2018-06-01

The photometric model for the mesopic luminous efficacy (LE m ) of hybrid white LEDs, including the radiant efficiency of both blue and red LEDs as well as the overall quantum efficiency of the phosphor layer or the quantum dot (QD) film, was developed. The optimal spectral parameters of integrated with quantum dots (QD-WLED), phosphor-converted white LED (pc-WLED) with red LEDs instead of red phosphor (pc/R WLED) for both color fidelity index (R f ) and color rendering index (R a ) above 70, 80, and 90 at correlated color temperatures of 2700-6500 K were obtained by maximizing the average LE m of four road lighting standards. By comparing among pc-WLED, QD-WLED, and pc/R WLED, it was suggested that the pc/R WLEDs make strong candidates for mesopic road lighting. The requirements of the overall efficiency of QD film were presented if the QD-WLEDs were competitive to the pc-WLEDs. Finally, the three real pc/R WLEDs with both R f and R a about 80 at CCTs of 2982 K, 4560 K, and 5683 K were demonstrated.

Highly luminescent and photostable quantum dot-silica monolith and its application to light-emitting diodes.

PubMed

Jun, Shinae; Lee, Junho; Jang, Eunjoo

2013-02-26

A highly luminescent and photostable quantum dot-silica monolith (QD-SM) substance was prepared by preliminary surface exchange of the QDs and base-catalyzed sol-gel condensation of silica. The SM was heavily doped with 6-mercaptohexanol exchanged QDs up to 12 vol % (26 wt %) without particle aggregation. Propylamine catalyst was important in maintaining the original luminescence of the QDs in the SM during sol-gel condensation. The silica layer was a good barrier against oxygen and moisture, so that the QD-SM maintained its initial luminescence after high-power UV radiation (∼1 W) for 200 h and through the 150 °C LED encapsulant curing process. Green and red light-emitting QD-SMs were applied as color-converting layers on blue LEDs, and the external quantum efficiency reached up to 89% for the green QD-SM and 63% for the red one. A white LED made with a mixture of green and red QDs in the SM, in which the color coordinate was adjusted at (0.23, 0.21) in CIE1931 color space for a backlight application, showed an efficacy of 47 lm/W, the highest value yet reported.

Selecting the optimal synthesis parameters of InP/CdxZn1-xSe quantum dots for a hybrid remote phosphor white LED for general lighting applications.

PubMed

Ryckaert, Jana; Correia, António; Tessier, Mickael D; Dupont, Dorian; Hens, Zeger; Hanselaer, Peter; Meuret, Youri

2017-11-27

Quantum dots can be used in white LEDs for lighting applications to fill the spectral gaps in the combined emission spectrum of the blue pumping LED and a broad band phosphor, in order to improve the source color rendering properties. Because quantum dots are low scattering materials, their use can also reduce the amount of backscattered light which can increase the overall efficiency of the white LED. The absorption spectrum and narrow emission spectrum of quantum dots can be easily tuned by altering their synthesis parameters. Due to the re-absorption events between the different luminescent materials and the light interaction with the LED package, determining the optimal quantum dot properties is a highly non-trivial task. In this paper we propose a methodology to select the optimal quantum dot to be combined with a broad band phosphor in order to realize a white LED with optimal luminous efficacy and CRI. The methodology is based on accurate and efficient simulations using the extended adding-doubling approach that take into account all the optical interactions. The method is elaborated for the specific case of a hybrid, remote phosphor white LED with YAG:Ce phosphor in combination with InP/CdxZn 1-x Se type quantum dots. The absorption and emission spectrum of the quantum dots are generated in function of three synthesis parameters (core size, shell size and cadmium fraction) by a semi-empirical 'quantum dot model' to include the continuous tunability of these spectra. The sufficiently fast simulations allow to scan the full parameter space consisting of these synthesis parameters and luminescent material concentrations in terms of CRI and efficacy. A conclusive visualization of the final performance allows to make a well-considered trade-off between these performance parameters. For the hybrid white remote phosphor LED with YAG:Ce and InP/CdxZn 1-x Se quantum dots a CRI Ra = 90 (with R9>50) and an overall efficacy of 110 lm/W is found.

Smart LED lighting for major reductions in power and energy use for plant lighting in space

NASA Astrophysics Data System (ADS)

Poulet, Lucie

Launching or resupplying food, oxygen, and water into space for long-duration, crewed missions to distant destinations, such as Mars, is currently impossible. Bioregenerative life-support systems under development worldwide involving photoautotrophic organisms offer a solution to the food dilemma. However, using traditional Earth-based lighting methods, growth of food crops consumes copious energy, and since sunlight will not always be available at different space destinations, efficient electric lighting solutions are badly needed to reduce the Equivalent System Mass (ESM) of life-support infrastructure to be launched and transported to future space destinations with sustainable human habitats. The scope of the present study was to demonstrate that using LEDs coupled to plant detection, and optimizing spectral and irradiance parameters of LED light, the model crop lettuce (Lactuca sativa L. cv. Waldmann's Green) can be grown with significantly lower electrical energy for plant lighting than using traditional lighting sources. Initial experiments aimed at adapting and troubleshooting a first-generation "smart" plant-detection system coupled to LED arrays resulted in optimizing the detection process for plant position and size to the limits of its current design. Lettuce crops were grown hydroponically in a growth chamber, where temperature, relative humidity, and CO2 level are controlled. Optimal irradiance and red/blue ratio of LED lighting were determined for plant growth during both lag and exponential phases of crop growth. Under optimizing conditions, the efficiency of the automatic detection system was integrated with LED switching and compared to a system in which all LEDs were energized throughout a crop-production cycle. At the end of each cropping cycle, plant fresh and dry weights and leaf area were measured and correlated with the amount of electrical energy (kWh) consumed. Preliminary results indicated that lettuce plants grown under optimizing conditions with red and blue LED lighting required 12 times less energy than with a traditional high-intensity discharge lighting system. This study paves the way for refinement of the smart lighting system and further, major reductions in ESM for space life-support systems and for ground-based controlled-environment agriculture. Project supported by NASA grant number NNX09AL99G.

Early Years Centres for Pre-School Children with Primary Language Difficulties: What Do They Cost, and are They Cost-Effective?

ERIC Educational Resources Information Center

Law, J.; Dockrell, J. E.; Castelnuovo, E.; Williams, K.; Seeff, B.; Normand, C.

2006-01-01

Background: High levels of early language difficulties raise practical issues about the efficient and effective means of meeting children's needs. Persistent language difficulties place significant financial pressures on health and education services. This has led to large investment in intervention in the early years; yet, little is known about…

Effects of irrigation on water use and water use efficiency in two fast growing Eucalyptus plantations

Treesearch

Robert M. Hubbard; Jose Stape; Michael G. Ryan; Auro C. Almeida; Juan Rojas

2010-01-01

Eucalyptus plantations occupy almost 20 million ha worldwide and exceed 3.7 million ha in Brazil alone. Improved genetics and silviculture have led to as much as a three-fold increase in productivity in Eucalyptus plantations in Brazil and the large land area occupied by these highly productive ecosystems raises concern over their...

A comparative study of fluorescent and LED lighting in industrial facilities

NASA Astrophysics Data System (ADS)

Perdahci PhD, C.; Akin BSc, H. C.; Cekic Msc, O.

2018-05-01

Industrial facilities have always been in search for reducing outgoings and minimizing energy consumption. Rapid developments in lighting technology require more energy efficient solutions not only for industries but also for many sectors and for households. Addition of solid-state technology has brought LED lamps into play and with LED lamp usage, efficacy level has reached its current values. Lighting systems which uses fluorescent and LED lamps have become the prior choice for many industrial facilities. This paper presents a comparative study about fluorescent and LED based indoor lighting systems for a warehouse building in an industrial facility in terms of lighting distribution values, colour rendering, power consumption, energy efficiency and visual comfort. Both scenarios have been modelled and simulated by using Relux and photometric data for the luminaires have been gathered by conducting tests and measurements in an accredited laboratory.

Enhanced efficiency of light emitting diodes with a nano-patterned gallium nitride surface realized by soft UV nanoimprint lithography

NASA Astrophysics Data System (ADS)

Zhou, Weimin; Min, Guoquan; Song, Zhitang; Zhang, Jing; Liu, Yanbo; Zhang, Jianping

2010-05-01

This paper reports a significant enhancement in the extraction efficiency of nano-patterned GaN light emitting diodes (LED) realized by soft UV nanoimprint lithography. The 2 inch soft stamp was fabricated using a replication stamp of anodic alumina oxide (AAO) membrane. The light output power was enhanced by 10.9% compared to that of the LED sample without a nano-patterned surface. Up to 41% enhancement in photoluminescence intensity was obtained from the nano-patterned GaN LED sample. The method is simple, cheap and suitable for mass production.

Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions

PubMed Central

Cheng, Chih-Hsien; Tzou, An-Jye; Chang, Jung-Hung; Chi, Yu-Chieh; Lin, Yung-Hsiang; Shih, Min-Hsiung; Lee, Chao-Kuei; Wu, Chih-I; Kuo, Hao-Chung; Chang, Chun-Yen; Lin, Gong-Ru

2016-01-01

The epitaxy of high-power gallium nitride (GaN) light-emitting diode (LED) on amorphous silicon carbide (a-SixC1−x) buffer is demonstrated. The a-SixC1−x buffers with different nonstoichiometric C/Si composition ratios are synthesized on SiO2/Si substrate by using a low-temperature plasma enhanced chemical vapor deposition. The GaN LEDs on different SixC1−x buffers exhibit different EL and C-V characteristics because of the extended strain induced interfacial defects. The EL power decays when increasing the Si content of SixC1−x buffer. The C-rich SixC1−x favors the GaN epitaxy and enables the strain relaxation to suppress the probability of Auger recombination. When the SixC1−x buffer changes from Si-rich to C-rich condition, the EL peak wavelengh shifts from 446 nm to 450 nm. Moreover, the uniform distribution contour of EL intensity spreads between the anode and the cathode because the traping density of the interfacial defect gradually reduces. In comparison with the GaN LED grown on Si-rich SixC1−x buffer, the device deposited on C-rich SixC1−x buffer shows a lower turn-on voltage, a higher output power, an external quantum efficiency, and an efficiency droop of 2.48 V, 106 mW, 42.3%, and 7%, respectively. PMID:26794268

Effects of Light Curing Method and Exposure Time on Mechanical Properties of Resin Based Dental Materials

PubMed Central

Alpöz, A. Riza; Ertuḡrul, Fahinur; Cogulu, Dilsah; Ak, Asli Topaloḡlu; Tanoḡlu, Metin; Kaya, Elçin

2008-01-01

Objectives The aim of this study was to investigate microhardness and compressive strength of composite resin (Tetric-Ceram, Ivoclar Vivadent), compomer (Compoglass, Ivoclar, Vivadent), and resin modified glass ionomer cement (Fuji II LC, GC Corp) polymerized using halogen light (Optilux 501, Demetron, Kerr) and LED (Bluephase C5, Ivoclar Vivadent) for different curing times. Methods Samples were placed in disc shaped plastic molds with uniform size of 5 mm diameter and 2 mm in thickness for surface microhardness test and placed in a diameter of 4 mm and a length of 2 mm teflon cylinders for compressive strength test. For each subgroup, 20 samples for microhardness (n=180) and 5 samples for compressive strength were prepared (n=45). In group 1, samples were polymerized using halogen light source for 40 seconds; in group 2 and 3 samples were polymerized using LED light source for 20 seconds and 40 seconds respectively. All data were analyzed by two way analysis of ANOVA and Tukey’s post-hoc tests. Results Same exposure time of 40 seconds with a low intensity LED was found similar or more efficient than a high intensity halogen light unit (P>.05), however application of LED for 20 seconds was found less efficient than 40 seconds curing time (P=.03). Conclusions It is important to increase the light curing time and use appropriate light curing devices to polymerize resin composite in deep cavities to maximize the hardness and compressive strength of restorative materials. PMID:19212507

An Efficient, Affordable Optically Stimulated Luminescent (OSL) Annealer.

PubMed

Abraham, Sara A; Frank, Samuel J; Kearfott, Kimberlee J

2017-07-01

Optically stimulated luminescent (OSL) dosimeters are devices used for measuring doses of ionizing radiation. Signal is stored within an OSL material so that when stimulated with light, light of a specific wavelength is emitted in proportion to the integrated ionizing radiation dose. Each interrogation of the material results in the loss of a small fraction of signal, thus allowing multiple interrogations leading to more accurate measurements of dose. In order to reuse a dosimeter, the residual signals from prior doses must be taken into account and subtracted from current readings, adding uncertainty to any future measurements. To reduce these errors when they become large, it is desirable to completely clear the stored signal or anneal the dosimeter. Traditionally, heating the material has accomplished this. In a commercially available dosimeter badge system, the OSL material Al2O3:C is incorporated into a plastic slide that would melt at the necessary high temperatures, which can reach 900 °C, required for annealing. Fortunately, due to the material's high sensitivity to light, OSLs can be optically annealed instead. In order to do this, an affordable OSL dosimeter annealer was designed with inexpensive, exchangeable blue, green, and white high intensity light-emitting diodes (LEDs). Several dosimeters were repeatedly annealed for recorded intervals and then read out. A single dosimeter was partially annealed through repeated interrogations with the LED array from a commercial reader. The signal loss due to the exposure to each light was analyzed to determine the practicality and efficiency of each color. The rate and extent of signal loss was dependent not only on the spectrum of annealing light but on the initial signal levels as well. These findings suggest that blue LEDs are the most promising for effective and rapid clearing of the OSL material Al2O3:C.

CALiPER Snapshot Report: Outdoor Area Lighting

DOE Office of Scientific and Technical Information (OSTI.GOV)

None, None

2016-09-30

Snapshot reports use data from DOE's LED Lighting Facts product list to compare the LED performance to standard technologies, and are designed to help lighting retailers, distributors, designers, utilities, energy efficiency program sponsors, and other stakeholders understand the current state of the LED market and its trajectory.

CALiPER Snapshot Report: Outdoor Area Lighting - 2017

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2017-09-29

Snapshot reports use data from DOE's LED Lighting Facts product list to compare the LED performance to standard technologies, and are designed to help lighting retailers, distributors, designers, utilities, energy efficiency program sponsors, and other stakeholders understand the current state of the LED market and its trajectory.

Fullerene-Free Organic Solar Cells with an Efficiency of 10.2% and an Energy Loss of 0.59 eV Based on a Thieno[3,4-c]Pyrrole-4,6-dione-Containing Wide Band Gap Polymer Donor.

PubMed

Hadmojo, Wisnu Tantyo; Wibowo, Febrian Tri Adhi; Ryu, Du Yeol; Jung, In Hwan; Jang, Sung-Yeon

2017-09-27

Although the combination of wide band gap polymer donors and narrow band gap small-molecule acceptors achieved state-of-the-art performance as bulk heterojunction (BHJ) active layers for organic solar cells, there have been only several of the wide band gap polymers that actually realized high-efficiency devices over >10%. Herein, we developed high-efficiency, low-energy-loss fullerene-free organic solar cells using a weakly crystalline wide band gap polymer donor, PBDTTPD-HT, and a nonfullerene small-molecule acceptor, ITIC. The excessive intermolecular stacking of ITIC is efficiently suppressed by the miscibility with PBDTTPD-HT, which led to a well-balanced nanomorphology in the PBDTTPD-HT/ITIC BHJ active films. The favorable optical, electronic, and energetic properties of PBDTTPD-HT with respect to ITIC achieved panchromatic photon-to-current conversion with a remarkably low energy loss (0.59 eV).

The distinctive microbial community improves composting efficiency in a full-scale hyperthermophilic composting plant.

PubMed

Yu, Zhen; Tang, Jia; Liao, Hanpeng; Liu, Xiaoming; Zhou, Puxiong; Chen, Zhi; Rensing, Christopher; Zhou, Shungui

2018-06-07

The application of conventional thermophilic composting (TC) is limited by poor efficiency. Newly-developed hyperthermophilic composting (HTC) is expected to overcome this shortcoming. However, the characterization of microbial communities associated with HTC remains unclear. Here, we compared the performance of HTC and TC in a full-scale sludge composting plant, and found that HTC running at the hyperthermophilic and thermophilic phases for 21 days, led to higher composting efficiency and techno-economic advantages over TC. Results of high-throughput sequencing showed drastic changes in the microbial community during HTC. Thermaceae (35.5-41.7%) was the predominant family in the hyperthermophilic phase, while the thermophilic phase was dominated by both Thermaceae (28.0-53.3%) and Thermoactinomycetaceae (29.9-36.1%). The change of microbial community could be the cause of continuous high temperature in HTC, and thus improve composting efficiency by accelerating the maturation process. This work has provided theoretical and practical guidance for managing sewage sludge by HTC. Copyright © 2018 Elsevier Ltd. All rights reserved.

Highly efficient low color temperature organic LED using blend carrier modulation layer

NASA Astrophysics Data System (ADS)

Hsieh, Yao-Ching; Chen, Szu-Hao; Shen, Shih-Ming; Wang, Ching-Chiun; Chen, Chien-Chih; Jou, Jwo-Huei

2012-10-01

Color temperature (CT) of light has great effect on human physiology and psychology, and low CT light, minimizing melatonin suppression and decreasing the risk of breast, colorectal, and prostate cancer. We demonstrates the incorporation of a blend carrier modulation interlayer (CML) between emissive layers to improve the device performance of low CT organic light emitting diodes, which exhibits an external quantum efficiency of 22.7% and 36 lm W-1 (54 cd A-1) with 1880 K at 100 cd m-2, or 20.8% and 29 lm W-1 (50 cd A-1) with 1940 K at 1000 cd m-2. The result shows a CT much lower than that of incandescent bulbs, which is 2500 K with 15 lmW-1 efficiency, and even as low as that of candles, which is 2000 K with 0.1 lmW-1. The high efficiency of the proposed device may be attributed to its CML, which helps effectively distribute the entering carriers into the available recombination zones.

Interfacial engineering of CuO nanorod/ZnO nanowire hybrid nanostructure photoanode in dye-sensitized solar cell

NASA Astrophysics Data System (ADS)

Kilic, Bayram; Turkdogan, Sunay; Astam, Aykut; Baran, Sümeyra Seniha; Asgin, Mansur; Gur, Emre; Kocak, Yusuf

2018-01-01

Developing efficient and cost-effective photoanode plays a vital role determining the photocurrent and photovoltage in dye-sensitized solar cells (DSSCs). Here, we demonstrate DSSCs that achieve relatively high power conversion efficiencies (PCEs) by using one-dimensional (1D) zinc oxide (ZnO) nanowires and copper (II) oxide (CuO) nanorods hybrid nanostructures. CuO nanorod-based thin films were prepared by hydrothermal method and used as a blocking layer on top of the ZnO nanowires' layer. The use of 1D ZnO nanowire/CuO nanorod hybrid nanostructures led to an exceptionally high photovoltaic performance of DSSCs with a remarkably high open-circuit voltage (0.764 V), short current density (14.76 mA/cm2 under AM1.5G conditions), and relatively high solar to power conversion efficiency (6.18%) . The enhancement of the solar to power conversion efficiency can be explained in terms of the lag effect of the interfacial recombination dynamics of CuO nanorod-blocking layer on ZnO nanowires. This work shows more economically feasible method to bring down the cost of the nano-hybrid cells and promises for the growth of other important materials to further enhance the solar to power conversion efficiency.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Le, Quyet Van; Kim, Jong Beom; Kim, Soo Young

We have investigated the effect of reaction temperature of hot-injection method on the structural properties of CsPbX3 (X: Br, I, Cl) perovskite nanocrystals (NCs) using the small- and wide-angle X-ray scattering. It is confirmed that the size of the NCs decreased as the reaction temperature decreased, resulting stronger quantum confinement. The cubic-phase perovskite NCs were formed despite the reaction temperatures increased from 140 to 180 °C. However, monodispersive NC cubes which are required for densely packing self-assembly film were only formed at lower temperatures. From the X-ray scattering measurements, the spin-coated film from more monodispersive perovskite nanocubes synthesized at lowermore » temperatures resulted in more preferred orientation. This dense-packing perovskite film with preferred orientation yielded efficient light-emitting diode (LED) performance. Thus, the dense-packing structure of NC assemblies formed after spin-coating should be considered for high-efficient LEDs based on perovskite quantum dots in addition to quantum confinement effect of the quantum dots.« less

Enhancement of Radiative Efficiency with Staggered InGaN Quantum Well Light Emitting Diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tansu, Nelson; Dierolf, Volkmar; Huang, Gensheng

2011-07-14

The technology on the large overlap InGaN QWs developed in this program is currently implemented in commercial technology in enhancing the internal quantum efficiency in major LED industry in US and Asia. The scientific finding from this work supported by the DOE enabled the implementation of this step-like staggered quantum well in the commercial LEDs.

Effects of colored light-emitting diode illumination on behavior and performance of laying hens.

PubMed

Huber-Eicher, B; Suter, A; Spring-Stähli, P

2013-04-01

The best method for lighting poultry houses has been an issue for many decades, generating much interest in any new systems that become available. Poultry farmers are now increasingly using colored LED (light-emitting diodes) to illuminate hen houses (e.g., in Germany, Austria, the Netherlands, and England). In Switzerland all newly installed systems are now equipped with LED, preferably green ones. The LED give monochromatic light from different wavelengths and have several advantages over conventional illuminants, including high energy efficiency, long life, high reliability, and low maintenance costs. The following study examines the effects of illumination with white, red, and green LED on behavior and production parameters of laying hens. Light intensities in the 3 treatments were adjusted to be perceived by hens as equal. Twenty-four groups of 25 laying hens were kept in identical compartments (5.0 × 3.3 m) equipped with a litter area, raised perches, feed and drinking facilities, and nest boxes. Initially, they were kept under white LED for a 2-wk adaptation period. For the next 4 wk, 8 randomly chosen compartments were lit with red LED (640 nm) and 8 others with green LED (520 nm). Behavior was monitored during the last 2 wk of the trial. Additionally weight gain, feed consumption, onset of lay, and laying performance were recorded. The results showed minor effects of green light on explorative behavior, whereas red light reduced aggressiveness compared with white light. The accelerating effect of red light on sexual development of laying hens was confirmed, and the trial demonstrated that this effect was due to the specific wavelength and not the intensity of light. However, an additional effect of light intensity may exist and should not be excluded.

A lighting assembly based on red and blue light-emitting diodes as a lighting source for space agriculture

NASA Astrophysics Data System (ADS)

Avercheva, Olga; Berkovich, Yuliy A.; Smolyanina, Svetlana; Bassarskaya, Elizaveta; Zhigalova, Tatiana; Ptushenko, Vasiliy; Erokhin, Alexei

Light-emitting diodes (LEDs) are a promising lighting source for space agriculture due to their high efficiency, longevity, safety, and other factors. Assemblies based on red and blue LEDs have been recommended in literature, although not all plants show sufficient productivity in such lighting conditions. Adding of green LEDs proposed in some works was aimed at psychological support for the crew, and not at the improvement of plant growth. We studied the growth and the state of the photosynthetic apparatus in Chinese cabbage (Brassica chinensis L.) plants grown under red (650 nm) and blue (470 nm) light-emitting diodes (LEDs). Plants grown under a high-pressure sodium lamp (HPS lamp) were used as a control. The plants were illuminated with two photosynthetic photon flux levels: nearly 400 µE and about 100 µE. Plants grown under LEDs with 400 µE level, as compared to control plants, showed lower fresh weight, edible biomass, growth rate, and sugar content. The difference in fresh weight and edible biomass was even more pronounced in plants grown with 100 µE level; the data indicate that the adaptability of the test plants to insufficient lighting decreased. Under LEDs, we observed the decreasing of root growth and the absence of transition to the flowering stage, which points to a change in the hormonal balance in plants grown in such lighting conditions. We also found differences in the functioning of the photosynthetic apparatus and its reaction to a low lighting level. We have concluded that a lighting assembly with red and blue LEDs only is insufficient for the plant growth and productivity, and can bring about alterations in their adaptive and regulatory mechanisms. Further studies are needed to optimize the lighting spectrum for space agriculture, taking into account the photosynthetic, phototropic and regulatory roles of light. Using white LEDs or adding far-red and green LEDs might be a promising approach.

White perovskite based lighting devices.

PubMed

Bidikoudi, M; Fresta, E; Costa, R D

2018-06-28

Hybrid organic-inorganic and all-inorganic metal halide perovskites have been one of the most intensively studied materials during the last few years. In particular, research focusing on understanding how to tune the photoluminescence features and to apply perovskites to optoelectronic applications has led to a myriad of new materials featuring high photoluminescence quantum yields covering the whole visible range, as well as devices with remarkable performances. Having already established their successful incorporation in highly efficient solar cells, the next step is to tackle the challenges in solid-state lighting (SSL) devices. Here, the most prominent is the preparation of white-emitting devices. Herein, we have provided a comprehensive view of the route towards perovskite white lighting devices, including thin film light-emitting diodes (PeLEDs) and hybrid LEDs (HLEDs), using perovskite based color down-converting coatings. While synthesis and photoluminescence features are briefly discussed, we focus on highlighting the major achievements and limitations in white devices. Overall, we expect that this review will provide the reader a general overview of the current state of perovskite white SSL, paving the way towards new breakthroughs in the near future.

Significant reduction in energy for plant-growth lighting in space using targeted LED lighting and spectral manipulation

NASA Astrophysics Data System (ADS)

Poulet, L.; Massa, G. D.; Morrow, R. C.; Bourget, C. M.; Wheeler, R. M.; Mitchell, C. A.

2014-07-01

Bioregenerative life-support systems involving photoautotrophic organisms will be necessary to sustain long-duration crewed missions at distant space destinations. Since sufficient sunlight will not always be available for plant growth at many space destinations, efficient electric-lighting solutions are greatly needed. The present study demonstrated that targeted plant lighting with light-emitting diodes (LEDs) and optimizing spectral parameters for close-canopy overhead LED lighting allowed the model crop leaf lettuce (Lactuca sativa L. cv. 'Waldmann's Green') to be grown using significantly less electrical energy than using traditional electric-lighting sources. Lettuce stands were grown hydroponically in a growth chamber controlling temperature, relative humidity, and CO2 level. Several red:blue ratios were tested for growth rate during the lag phase of lettuce growth. In addition, start of the exponential growth phase was evaluated. Following establishment of a 95% red + 5% blue spectral balance giving the best growth response, the energy efficiency of a targeted lighting system was compared with that of two total coverage (untargeted) LED lighting systems throughout a crop-production cycle, one using the same proportion of red and blue LEDs and the other using white LEDs. At the end of each cropping cycle, whole-plant fresh and dry mass and leaf area were measured and correlated with the amount of electrical energy (kWh) consumed for crop lighting. Lettuce crops grown with targeted red + blue LED lighting used 50% less energy per unit dry biomass accumulated, and the total coverage white LEDs used 32% less energy per unit dry biomass accumulated than did the total coverage red + blue LEDs. An energy-conversion efficiency of less than 1 kWh/g dry biomass is possible using targeted close-canopy LED lighting with spectral optimization. This project was supported by NASA grant NNX09AL99G.