Status of multijunction solar cells

NASA Technical Reports Server (NTRS)

Yeh, Y. C. M.; Chu, C. L.

1996-01-01

This paper describes Applied Solar's present activity on Multijunction (MJ) space cells. We have worked on a variety of MJ cells, both monolithic and mechanically stacked. In recent years, most effort has been directed to GaInP2/GaAs monolithic cells, grown on Ge substrates, and the status of this cell design will be reviewed here. MJ cells are in demand to provide satellite power because of the acceptance of the overwhelming importance of high efficiency to reduce the area, weight and cost of space PV power systems. The need for high efficiencies has already accelerated the production of GaAs/Ge cells, with efficiencies 18.5-19%. When users realized that MJ cells could provide higher efficiencies (from 22% to 26%) with only fractional increase in costs, the demand for production MJ cells increased rapidly. The main purpose of the work described is to transfer the MOCVD growth technology of MJ high efficiency cells to a production environment, providing all the space requirements of users.

High band gap 2-6 and 3-5 tunneling junctions for silicon multijunction solar cells

NASA Technical Reports Server (NTRS)

Daud, Taher (Inventor); Kachare, Akaram H. (Inventor)

1986-01-01

A multijunction silicon solar cell of high efficiency is provided by providing a tunnel junction between the solar cell junctions to connect them in series. The tunnel junction is comprised of p+ and n+ layers of high band gap 3-5 or 2-6 semiconductor materials that match the lattice structure of silicon, such as GaP (band gap 2.24 eV) or ZnS (band gap 3.6 eV). Each of which has a perfect lattice match with silicon to avoid defects normally associated with lattice mismatch.

Performance analysis of high-concentrated multi-junction solar cells in hot climate

NASA Astrophysics Data System (ADS)

Ghoneim, Adel A.; Kandil, Kandil M.; Alzanki, Talal H.; Alenezi, Mohammad R.

2018-03-01

Multi-junction concentrator solar cells are a promising technology as they can fulfill the increasing energy demand with renewable sources. Focusing sunlight upon the aperture of multi-junction photovoltaic (PV) cells can generate much greater power densities than conventional PV cells. So, concentrated PV multi-junction solar cells offer a promising way towards achieving minimum cost per kilowatt-hour. However, these cells have many aspects that must be fixed to be feasible for large-scale energy generation. In this work, a model is developed to analyze the impact of various atmospheric factors on concentrator PV performance. A single-diode equivalent circuit model is developed to examine multi-junction cells performance in hot weather conditions, considering the impacts of both temperature and concentration ratio. The impacts of spectral variations of irradiance on annual performance of various high-concentrated photovoltaic (HCPV) panels are examined, adapting spectra simulations using the SMARTS model. Also, the diode shunt resistance neglected in the existing models is considered in the present model. The present results are efficiently validated against measurements from published data to within 2% accuracy. Present predictions show that the single-diode model considering the shunt resistance gives accurate and reliable results. Also, aerosol optical depth (AOD) and air mass are most important atmospheric parameters having a significant impact on HCPV cell performance. In addition, the electrical efficiency (η) is noticed to increase with concentration to a certain concentration degree after which it decreases. Finally, based on the model predictions, let us conclude that the present model could be adapted properly to examine HCPV cells' performance over a broad range of operating conditions.

Graded recombination layers for multijunction photovoltaics.

PubMed

Koleilat, Ghada I; Wang, Xihua; Sargent, Edward H

2012-06-13

Multijunction devices consist of a stack of semiconductor junctions having bandgaps tuned across a broad spectrum. In solar cells this concept is used to increase the efficiency of photovoltaic harvesting, while light emitters and detectors use it to achieve multicolor and spectrally tunable behavior. In series-connected current-matched multijunction devices, the recombination layers must allow the hole current from one cell to recombine, with high efficiency and low voltage loss, with the electron current from the next cell. We recently reported a tandem solar cell in which the recombination layer was implemented using a progression of n-type oxides whose doping densities and work functions serve to connect, with negligible resistive loss at solar current densities, the constituent cells. Here we present the generalized conditions for design of efficient graded recombination layer solar devices. We report the number of interlayers and the requirements on work function and doping of each interlayer, to bridge an work function difference as high as 1.6 eV. We also find solutions that minimize the doping required of the interlayers in order to minimize optical absorption due to free carriers in the graded recombination layer (GRL). We demonstrate a family of new GRL designs experimentally and highlight the benefits of the progression of dopings and work functions in the interlayers.

Laboratory instrumentation and techniques for characterizing multi-junction solar cells for space applications

NASA Technical Reports Server (NTRS)

Woodyard, James R.

1995-01-01

Multi-junction solar cells are attractive for space applications because they can be designed to convert a larger fraction of AMO into electrical power at a lower cost than single-junction cells. The performance of multi-junction cells is much more sensitive to the spectral irradiance of the illuminating source than single-junction cells. The design of high efficiency multi-junction cells for space applications requires matching the optoelectronic properties of the junctions to AMO spectral irradiance. Unlike single-junction cells, it is not possible to carry out quantum efficiency measurements using only a monochromatic probe beam and determining the cell short-circuit current assuming linearity of the quantum efficiency. Additionally, current-voltage characteristics can not be calculated from measurements under non-AMO light sources using spectral-correction methods. There are reports in the literature on characterizing the performance of multi junction cells by measuring and convoluting the quantum efficiency of each junction with the spectral irradiance; the technique is of limited value for the characterization of cell performance under AMO power-generating conditions. We report the results of research to develop instrumentation and techniques for characterizing multi junction solar cells for space . An integrated system is described which consists of a standard lamp, spectral radiometer, dual-source solar simulator, and personal computer based current-voltage and quantum efficiency equipment. The spectral radiometer is calibrated regularly using the tungsten-halogen standard lamp which has a calibration based on NIST scales. The solar simulator produces the light bias beam for current-voltage and cell quantum efficiency measurements. The calibrated spectral radiometer is used to 'fit' the spectral irradiance of the dual-source solar simulator to WRL AMO data. The quantum efficiency apparatus includes a monochromatic probe beam for measuring the absolute cell quantum efficiency at various voltage biases, including the voltage bias corresponding to the maximum-power point under AMO light bias. The details of the procedures to 'fit' the spectral irradiance to AMO will be discussed. An assessment of the role of the accuracy of the 'fit' of the spectral irradiance and probe beam intensity on measured cell characteristics will be presented. quantum efficiencies were measured with both spectral light bias and AMO light bias; the measurements show striking differences. Spectral irradiances were convoluted with cell quantum efficiencies to calculate cell currents as function of voltage. The calculated currents compare with measured currents at the 1% level. Measurements on a variety of multi-junction cells will be presented. The dependence of defects in junctions on cell quantum efficiencies measured under light and voltage bias conditions will be presented. Comments will be made on issues related to standards for calibration, and limitations of the instrumentation and techniques. Expeditious development of multi-junction solar cell technology for space presents challenges for cell characterization in the laboratory.

Thorough subcells diagnosis in a multi-junction solar cell via absolute electroluminescence-efficiency measurements

PubMed Central

Chen, Shaoqiang; Zhu, Lin; Yoshita, Masahiro; Mochizuki, Toshimitsu; Kim, Changsu; Akiyama, Hidefumi; Imaizumi, Mitsuru; Kanemitsu, Yoshihiko

2015-01-01

World-wide studies on multi-junction (tandem) solar cells have led to record-breaking improvements in conversion efficiencies year after year. To obtain detailed and proper feedback for solar-cell design and fabrication, it is necessary to establish standard methods for diagnosing subcells in fabricated tandem devices. Here, we propose a potential standard method to quantify the detailed subcell properties of multi-junction solar cells based on absolute measurements of electroluminescence (EL) external quantum efficiency in addition to the conventional solar-cell external-quantum-efficiency measurements. We demonstrate that the absolute-EL-quantum-efficiency measurements provide I–V relations of individual subcells without the need for referencing measured I–V data, which is in stark contrast to previous works. Moreover, our measurements quantify the absolute rates of junction loss, non-radiative loss, radiative loss, and luminescence coupling in the subcells, which constitute the “balance sheets” of tandem solar cells. PMID:25592484

Highly Transparent Compositionally Graded Buffers for New Metamorphic Multijunction Solar Cell Designs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulte, Kevin L.; France, Ryan M.; Geisz, John F.

The development of compositionally graded buffer layers (CGBs) with enhanced transparency would enable novel five and six junction solar cells, with efficiencies approaching 50% under high concentration. Here, we demonstrate highly transparent grades between the GaAs and InP lattice constants on both A- and B-miscut GaAs substrates, employing Al xGayIn 1-x-yAs and highly Se-doped Burstein-Moss (BM) shifted Ga xIn 1-xP. Transparency to >810 and >890 nm wavelengths is demonstrated with BM-shifted Ga xIn 1-xP on B-miscut substrates and Al xGayIn 1-x-yAs/Ga xIn 1-xP(Se) combined grades on A-miscut substrates, respectively. 0.74 eV GaInAs solar cells grown on these transparent CGBs exhibitmore » Woc = 0.41 V at mA/ cm 2, performance comparable with the state-of-the-art Ga xIn 1-xP grade employed in the four-junction-inverted metamorphic multijunction (IMM) cell. A GaAs/0.74cV GaInAs tandem cell was grown with a transparent BM-shifted Ga xIn 1-xP CGB to verify the CGB performance in a multijunction device structure. Quantum efficiency measurements indicate that the CGB is completely transparent to photons below the GaAs bandedge, validating its use in 4-6 junction IMM devices with a single-graded buffer. Furthermore, this tandem represents a highly efficient two-junction band gap combination, achieving 29.6% ± 1.2% efficiency under the AM1.5 global spectrum, demonstrating how the additional transparency enables new device structures.« less

Highly Transparent Compositionally Graded Buffers for New Metamorphic Multijunction Solar Cell Designs

DOE PAGES

Schulte, Kevin L.; France, Ryan M.; Geisz, John F.

2016-11-11

The development of compositionally graded buffer layers (CGBs) with enhanced transparency would enable novel five and six junction solar cells, with efficiencies approaching 50% under high concentration. Here, we demonstrate highly transparent grades between the GaAs and InP lattice constants on both A- and B-miscut GaAs substrates, employing Al xGayIn 1-x-yAs and highly Se-doped Burstein-Moss (BM) shifted Ga xIn 1-xP. Transparency to >810 and >890 nm wavelengths is demonstrated with BM-shifted Ga xIn 1-xP on B-miscut substrates and Al xGayIn 1-x-yAs/Ga xIn 1-xP(Se) combined grades on A-miscut substrates, respectively. 0.74 eV GaInAs solar cells grown on these transparent CGBs exhibitmore » Woc = 0.41 V at mA/ cm 2, performance comparable with the state-of-the-art Ga xIn 1-xP grade employed in the four-junction-inverted metamorphic multijunction (IMM) cell. A GaAs/0.74cV GaInAs tandem cell was grown with a transparent BM-shifted Ga xIn 1-xP CGB to verify the CGB performance in a multijunction device structure. Quantum efficiency measurements indicate that the CGB is completely transparent to photons below the GaAs bandedge, validating its use in 4-6 junction IMM devices with a single-graded buffer. Furthermore, this tandem represents a highly efficient two-junction band gap combination, achieving 29.6% ± 1.2% efficiency under the AM1.5 global spectrum, demonstrating how the additional transparency enables new device structures.« less

In-Situ Optical Imaging of Carrier Transport in Multilayer Solar Cells

DTIC Science & Technology

2008-06-01

5 1. Efficiency Considerations....................................................... 5 2. Construction...improved efficiency solar cells. The need to move forward on these improvements is driven by the increasing price of oil and other traditional fuels...any improvement in material in a high efficiency multi-junction cell can be difficult to mathematically model, and much effort is involved in

A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells

PubMed Central

Guo, Fei; Li, Ning; Fecher, Frank W.; Gasparini, Nicola; Quiroz, Cesar Omar Ramirez; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V.; Radmilović, Velimir R.; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J.

2015-01-01

The multi-junction concept is the most relevant approach to overcome the Shockley–Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies. PMID:26177808

A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells.

PubMed

Guo, Fei; Li, Ning; Fecher, Frank W; Gasparini, Nicola; Ramirez Quiroz, Cesar Omar; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V; Radmilović, Velimir R; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J

2015-07-16

The multi-junction concept is the most relevant approach to overcome the Shockley-Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies.

Superstructures and multijunction cells for high efficiency energy conversion

NASA Technical Reports Server (NTRS)

Wagner, M.; Leburton, J. P.

1985-01-01

Potential applications of superlattices to photovoltaic structures are discussed. A single-bandgap, multijunction cell with selective electrodes for lateral transport of collected carriers is proposed. The concept is based on similar doping superlattice (NIPI) structures. Computer simulations show that by reducing bulk recombination losses, the spectral response of such cells is enhanced, particularly for poor quality materials with short diffusion lengths. Dark current contributions of additional junctions result in a trade-off between short-circuit current and open-circuit voltage as the number of layers is increased. One or two extra junctions appear to be optimal.

Progress in the Development of Metamorphic Multi-Junction III-V Space-Solar Cells at Essential Research Incorporated

NASA Technical Reports Server (NTRS)

Sinharoy, Samar; Patton, Martin O.; Valko, Thomas M., Sr.; Weizer, Victor G.

2002-01-01

Theoretical calculations have shown that highest efficiency III-V multi-junction solar cells require alloy structures that cannot be grown on a lattice-matched substrate. Ever since the first demonstration of high efficiency metamorphic single junction 1.1 eV and 1.2 eV InGaAs solar cells by Essential Research Incorporated (ERI), interest has grown in the development of multi-junction cells of this type using graded buffer layer technology. ERI is currently developing a dual-junction 1.6 eV InGaP/1.1 eV InGaAs tandem cell (projected practical air-mass zero (AM0), one-sun efficiency of 28%, and 100-sun efficiency of 37.5%) under a Ballistic Missile Defense Command (BMDO) SBIR Phase II program. A second ongoing research effort at ERI involves the development of a 2.1 eV AlGaInP/1.6 eV InGaAsP/1.2 eV InGaAs triple-junction concentrator tandem cell (projected practical AM0 efficiency of 36.5% under 100 suns) under a SBIR Phase II program funded by the Air Force. We are in the process of optimizing the dual-junction cell performance. In case of the triple-junction cell, we have developed the bottom and the middle cell, and are in the process of developing the layer structures needed for the top cell. A progress report is presented in this paper.

Modeling and optimal designs for dislocation and radiation tolerant single and multijunction solar cells

NASA Astrophysics Data System (ADS)

Mehrotra, A.; Alemu, A.; Freundlich, A.

2011-02-01

Crystalline defects (e.g. dislocations or grain boundaries) as well as electron and proton induced defects cause reduction of minority carrier diffusion length which in turn results in degradation of efficiency of solar cells. Hetro-epitaxial or metamorphic III-V devices with low dislocation density have high BOL efficiencies but electron-proton radiation causes degradation in EOL efficiencies. By optimizing the device design (emitter-base thickness, doping) we can obtain highly dislocated metamorphic devices that are radiation resistant. Here we have modeled III-V single and multi junction solar cells using drift and diffusion equations considering experimental III-V material parameters, dislocation density, 1 Mev equivalent electron radiation doses, thicknesses and doping concentration. Thinner device thickness leads to increment in EOL efficiency of high dislocation density solar cells. By optimizing device design we can obtain nearly same EOL efficiencies from high dislocation solar cells than from defect free III-V multijunction solar cells. As example defect free GaAs solar cell after optimization gives 11.2% EOL efficiency (under typical 5x1015cm-2 1 MeV electron fluence) while a GaAs solar cell with high dislocation density (108 cm-2) after optimization gives 10.6% EOL efficiency. The approach provides an additional degree of freedom in the design of high efficiency space cells and could in turn be used to relax the need for thick defect filtering buffer in metamorphic devices.

Innovative architecture design for high performance organic and hybrid multi-junction solar cells

NASA Astrophysics Data System (ADS)

Li, Ning; Spyropoulos, George D.; Brabec, Christoph J.

2017-08-01

The multi-junction concept is especially attractive for the photovoltaic (PV) research community owing to its potential to overcome the Schockley-Queisser limit of single-junction solar cells. Tremendous research interests are now focused on the development of high-performance absorbers and novel device architectures for emerging PV technologies, such as organic and perovskite PVs. It has been predicted that the multi-junction concept is able to boost the organic and perovskite PV technologies approaching the 20% and 30% benchmarks, respectively, showing a bright future of commercialization of the emerging PV technologies. In this contribution, we will demonstrate innovative architecture design for solution-processed, highly functional organic and hybrid multi-junction solar cells. A simple but elegant approach to fabricating organic and hybrid multi-junction solar cells will be introduced. By laminating single organic/hybrid solar cells together through an intermediate layer, the manufacturing cost and complexity of large-scale multi-junction solar cells can be significantly reduced. This smart approach to balancing the photocurrents as well as open circuit voltages in multi-junction solar cells will be demonstrated and discussed in detail.

Multijunction Solar Cell Efficiencies: Effect of Spectral Window, Optical Environment and Radiative Coupling

DTIC Science & Technology

2014-09-04

Multijunction solar cell efficiencies: effect of spectral window, optical environment and radiative coupling† Carissa N. Eisler ,a Ze’ev R. Abrams,b...SC0001293. C. N. Eisler was supported by the Department of Defense (DoD) through the National Defense Science & Engineering Graduate Fellowship (NDSEG...Photovoltaic Specialists Conference, Tampa, FL, 2013. 20 E. M. Ellion, World Pat., 8,701,512, 1987 . 21 B. Mitchell, G. Peharz, G. Siefer, M. Peters, T

Material Science for High-Efficiency Photovoltaics: From Advanced Optical Coatings to Cell Design for High-Temperature Applications

NASA Astrophysics Data System (ADS)

Perl, Emmett Edward

Solar cells based on III-V compound semiconductors are ideally suited to convert solar energy into electricity. The highest efficiency single-junction solar cells are made of gallium arsenide, and have attained an efficiency of 28.8%. Multiple III-V materials can be combined to construct multijunction solar cells, which have reached record efficiencies greater than 45% under concentration. III-V solar cells are also well suited to operate efficiently at elevated temperatures, due in large part to their high material quality. These properties make III-V solar cells an excellent choice for use in concentrator systems. Concentrator photovoltaic systems have attained module efficiencies that exceed 40%, and have the potential to reach the lowest levelized cost of electricity in sunny places like the desert southwest. Hybrid photovoltaic-thermal solar energy systems can utilize high-temperature III-V solar cells to simultaneously achieve dispatchability and a high sunlight-to-electricity efficiency. This dissertation explores material science to advance the state of III-V multijunction solar cells for use in concentrator photovoltaic and hybrid photovoltaic-thermal solar energy systems. The first half of this dissertation describes work on advanced optical designs to improve the efficiency of multijunction solar cells. As multijunction solar cells move to configurations with four or more subcells, they utilize a larger portion of the solar spectrum. Broadband antireflection coatings are essential to realizing efficiency gains for these state-of-the-art cells. A hybrid design consisting of antireflective nanostructures placed on top of multilayer interference-based optical coatings is developed. Antireflection coatings that utilize this hybrid approach yield unparalleled performance, minimizing reflection losses to just 0.2% on sapphire and 0.6% on gallium nitride for 300-1800nm light. Dichroic mirrors are developed for bonded 5-junction solar cells that utilize InGaN as a top junction. These designs maximize reflection of high-energy light for an InGaN top junction while minimizing reflection of low-energy light that would be absorbed by the lower four junctions. Increasing the reflectivity of high-energy photons enables a second pass of light through the InGaN cell, leading to increased absorption and a higher photocurrent. These optical designs enhanced the efficiency of a 2.65eV InGaN solar cell to a value of 3.3% under the AM0 spectrum, the highest reported efficiency for a standalone InGaN solar cell. The second half of the dissertation describes the development of III-V solar cells for high-temperature applications. As the operating temperature of a solar cell is increased, the ideal bandgap of the top junction increases. AlGaInP solar cells with bandgaps ranging from 1.9eV to 2.2eV are developed. A 2.03eV AlGaInP solar cell is demonstrated with a bandgap-voltage offset of 440mV, the lowest of any AlGaInP solar cell reported to date. Single-junction AlGaInP, GaInP, and GaAs solar cells designed for high-temperature operation are characterized up to a temperature of 400°C. The cell properties are compared to an analytical drift-diffusion model, and we find that a fundamental increase in the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents, open-circuit voltage, and cell efficiency. These findings provide a valuable guide to the design of any system that requires high-temperature solar cell operation.

Planar concentrators at the étendue limit

NASA Astrophysics Data System (ADS)

Winston, Roland; Gordon, Jeffrey M.

2005-08-01

Recently proposed aplanatic imaging designs are integrally combined with nonimaging flux boosters to produce an ultra-compact planar dielectric-filled concentrator that performs near the étendue limit. Such optical devices are attractive for high-efficiency multi-junction photovoltaics at high flux, with realistic power generation of 1 W from a 1 mm2 cell.

New Multijunction Design Leads to Ultra-Efficient Solar Cell; Highlights in Research & Development, NREL (National Renewable Energy Laboratory)

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2015-09-01

NREL has demonstrated a 45.7% conversion efficiency for a four-junction solar cell at 234 suns concentration. This achievement represents one of the highest photovoltaic research cell efficiencies ever achieved across all types of solar cells. NREL's new solar cell, which is designed for operation in a concentrator photovoltaic (CPV) system where it can receive more than 1,000 suns of concentrated sunlight, greatly improves earlier designs by adding an additional high quality absorber layer to achieve an ultra-high efficiency.

Technology Pathway Partnership Final Scientific Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hall, John C. Dr.; Godby, Larry A.

2012-04-26

This report covers the scientific progress and results made in the development of high efficiency multijunction solar cells and the light concentrating non-imaging optics for the commercial generation of renewable solar energy. During the contract period the efficiency of the multijunction solar cell was raised from 36.5% to 40% in commercially available fully qualified cells. In addition significant strides were made in automating production process for these cells in order to meet the costs required to compete with commercial electricity. Concurrent with the cells effort Boeing also developed a non imaging optical systems to raise the light intensity at themore » photovoltaic cell to the rage of 800 to 900 suns. Solar module efficiencies greater than 30% were consistently demonstrated. The technology and its manufacturing were maturated to a projected price of < $0.015 per kWh and demonstrated by automated assembly in a robotic factory with a throughput of 2 MWh/yr. The technology was demonstrated in a 100 kW power plant erected at California State University Northridge, CA.« less

Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition.

PubMed

Yao, Maoqing; Cong, Sen; Arab, Shermin; Huang, Ningfeng; Povinelli, Michelle L; Cronin, Stephen B; Dapkus, P Daniel; Zhou, Chongwu

2015-11-11

Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the Shockley-Queisser limit. Due to their unique optical, electrical, and crystallographic features, semiconductor nanowires are good candidates to achieve monolithic integration of solar cell materials that are not lattice-matched. Here, we report the first realization of nanowire-on-Si tandem cells with the observation of voltage addition of the GaAs nanowire top cell and the Si bottom cell with an open circuit voltage of 0.956 V and an efficiency of 11.4%. Our simulation showed that the current-matching condition plays an important role in the overall efficiency. Furthermore, we characterized GaAs nanowire arrays grown on lattice-mismatched Si substrates and estimated the carrier density using photoluminescence. A low-resistance connecting junction was obtained using n(+)-GaAs/p(+)-Si heterojunction. Finally, we demonstrated tandem solar cells based on top GaAs nanowire array solar cells grown on bottom planar Si solar cells. The reported nanowire-on-Si tandem cell opens up great opportunities for high-efficiency, low-cost multijunction solar cells.

Solar concentrator modules with silicone-onglass Fresnel lens panels and multijunction cells.

PubMed

Rumyantsev, Valery D

2010-04-26

High-efficiency multijunction (MJ) solar cells, being very expensive to manufacture, should only be used in combination with solar concentrators in terrestrial applications. An essential cost reduction of electric power produced by photovoltaic (PV) installations with MJ cells, may be expected by the creation of highly-effective, but inexpensive, elements for optical concentration and sun tracking. This article is an overview of the corresponding approach under development at the Ioffe Physical Technical Institute. The approach to R&D of the solar PV modules is based on the concepts of sunlight concentration by small-aperture area Fresnel lenses and "all-glass" module design. The small-aperture area lenses are arranged as a panel with silicone-on-glass structure where the glass plate serves as the front surface of a module. In turn, high-efficiency InGaP/(In)GaAs/Ge cells are arranged on a rear module panel mounted on a glass plate which functions as a heat sink and integrated protective cover for the cells. The developed PV modules and sun trackers are characterized by simple design, and are regarded as the prototypes for further commercialization.

GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

NASA Astrophysics Data System (ADS)

Nelson, George T.; Juang, Bor-Chau; Slocum, Michael A.; Bittner, Zachary S.; Laghumavarapu, Ramesh B.; Huffaker, Diana L.; Hubbard, Seth M.

2017-12-01

Growth of GaSb with low threading dislocation density directly on GaAs may be possible with the strategic strain relaxation of interfacial misfit arrays. This creates an opportunity for a multi-junction solar cell with access to a wide range of well-developed direct bandgap materials. Multi-junction cells with a single layer of GaSb/GaAs interfacial misfit arrays could achieve higher efficiency than state-of-the-art inverted metamorphic multi-junction cells while forgoing the need for costly compositionally graded buffer layers. To develop this technology, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare homoepitaxial and heteroepitaxial GaSb device results. The GaSb-on-GaSb cell had an AM1.5g efficiency of 5.5% and a 44-sun AM1.5d efficiency of 8.9%. The GaSb-on-GaAs cell was 1.0% efficient under AM1.5g and 4.5% at 44 suns. The lower performance of the heteroepitaxial cell was due to low minority carrier Shockley-Read-Hall lifetimes and bulk shunting caused by defects related to the mismatched growth. A physics-based device simulator was used to create an inverted triple-junction GaInP/GaAs/GaSb model. The model predicted that, with current GaSb-on-GaAs material quality, the not-current-matched, proof-of-concept cell would provide 0.5% absolute efficiency gain over a tandem GaInP/GaAs cell at 1 sun and 2.5% gain at 44 suns, indicating that the effectiveness of the GaSb junction was a function of concentration.

Analysis of a four lamp flash system for calibrating multi-junction solar cells under concentrated light

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schachtner, Michael, E-mail: michael.schachtner@ise.fraunhofer.de; Prado, Marcelo Loyo; Reichmuth, S. Kasimir

2015-09-28

It has been known for a long time that the precise characterization of multi-junction solar cells demands spectrally tunable solar simulators. The calibration of innovative multi-junction solar cells for CPV applications now requires tunable solar simulators which provide high irradiation levels. This paper describes the commissioning and calibration of a flash-based four-lamp simulator to be used for the measurement of multi-junction solar cells with up to four subcells under concentrated light.

High Radiation Resistance IMM Solar Cell

NASA Technical Reports Server (NTRS)

Pan, Noren

2015-01-01

Due to high launch costs, weight reduction is a key driver for the development of new solar cell technologies suitable for space applications. This project is developing a unique triple-junction inverted metamorphic multijunction (IMM) technology that enables the manufacture of very lightweight, low-cost InGaAsP-based multijunction solar cells. This IMM technology consists of indium (In) and phosphorous (P) solar cell active materials, which are designed to improve the radiation-resistant properties of the triple-junction solar cell while maintaining high efficiency. The intrinsic radiation hardness of InP materials makes them of great interest for building solar cells suitable for deployment in harsh radiation environments, such as medium Earth orbit and missions to the outer planets. NASA Glenn's recently developed epitaxial lift-off (ELO) process also will be applied to this new structure, which will enable the fabrication of the IMM structure without the substrate.

30% CPV Module Milestone

NASA Astrophysics Data System (ADS)

Gordon, Robert; Kinsey, Geoff; Nayaak, Adi; Garboushian, Vahan

2010-10-01

Concentrating Photovoltaics has held out the promise of low cost solar electricity for now several decades. Steady progress towards this goal in the 80's and 90's gradually produced more efficient and reliable systems. System efficiency is regarded as the largest factor in lowering the electricity cost and the relatively recent advent of the terrestrial multi-junction solar cell has pressed this race forward dramatically. CPV systems are now exhibiting impressive AC field efficiencies of 25% and more, approximately twice that of the best flat plate systems available today. Amonix inc. has just tested their latest generation multi-junction module design, achieving over 31% DC efficiency at near PVUSA test conditions. Inculcating this design into their next MegaModule is forthcoming, but the expected AC system field efficiency should be significantly higher than current 25% levels.

III-V-N materials for super high-efficiency multijunction solar cells

NASA Astrophysics Data System (ADS)

Yamaguchi, Masafumi; Bouzazi, Boussairi; Suzuki, Hidetoshi; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio

2012-10-01

We have been studying concentrator multi-junction solar cells under Japanese Innovative Photovoltaic R&D program since FY2008. InGaAsN is one of appropriate materials for 4-or 5-junction solar cell configuration because this material can be lattice-matched to GaAs and Ge substrates. However, present InGaAsN single-junction solar cells have been inefficient because of low minority-carrier lifetime due to N-related recombination centers and low carrier mobility due to alloy scattering and non-homogeneity of N. This paper presents our major results in the understanding of majority and minority carrier traps in GaAsN grown by chemical beam epitaxy and their relationships with the poor electrical properties of the materials.

Planar concentrators near the étendue limit.

PubMed

Winston, Roland; Gordon, Jeffrey M

2005-10-01

Recently proposed aplanatic imaging designs are integrally combined with nonimaging flux boosters to produce an ultracompact planar glass-filled concentrator that performs near the étendue limit. Such optical devices are attractive for high-efficiency multijunction photovoltaics at high flux, with realistic power generation of 1 W from a 1 mm2 cell. When deployed in reverse, our designs provide collimation even for high-numerical-aperture light sources.

Planar concentrators near the étendue limit

NASA Astrophysics Data System (ADS)

Winston, Roland; Gordon, Jeffrey M.

2005-10-01

Recently proposed aplanatic imaging designs are integrally combined with nonimaging flux boosters to produce an ultracompact planar glass-filled concentrator that performs near the étendue limit. Such optical devices are attractive for high-efficiency multijunction photovoltaics at high flux, with realistic power generation of 1 W from a 1 mm² cell. When deployed in reverse, our designs provide collimation even for high-numerical-aperture light sources.

Understanding/Modelling of Thermal and Radiation Benefits of Quantum Dot Solar Cells

DTIC Science & Technology

2008-07-11

GaAs solar cells have been investigated. Strain compensation is a key step in realizing high- efficiency quantum dots solar cells (QDSC). InAs...factor. A strong correlation between the temperature dependent quantum dot electroluminescence peak emission wavelength and the sub-GaAs bandgap...increased efficiency and radiation resistance devices. The incorporation of quantum dots (QDs) into traditional single or multi-junction crystalline solar

Lower hybrid current drive experiments in the HT-6M tokamak

NASA Astrophysics Data System (ADS)

Jiang, Tongwen; Liu, Yuexiu; Guo, Wenkang; Zhang, Xuelei; Luo, Jiarong

1987-07-01

Lower hybrid current drive (LHCD) experiments with a multijunction grill have been performed in the HT-6M tokamak. When the RF power pulse with 15ms risetime is injected into the plasma, the toroidal current amplitude is raised, but the temporal variation of the loop voltage does not have measurable change. The efficiency of current drive is Irf/Prf=0.57kA/kW at bar ne=3 × 1012cm-3 and Bt=8KG. It seems that the multijunction grill has the same efficiency as the ordinary grill on the LHCD experiments.

InGaAsN/GaAs heterojunction for multi-junction solar cells

DOEpatents

Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

2001-01-01

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 070%.

Strain-balanced type-II superlattices for efficient multi-junction solar cells.

PubMed

Gonzalo, A; Utrilla, A D; Reyes, D F; Braza, V; Llorens, J M; Fuertes Marrón, D; Alén, B; Ben, T; González, D; Guzman, A; Hierro, A; Ulloa, J M

2017-06-21

Multi-junction solar cells made by assembling semiconductor materials with different bandgap energies have hold the record conversion efficiencies for many years and are currently approaching 50%. Theoretical efficiency limits make use of optimum designs with the right lattice constant-bandgap energy combination, which requires a 1.0-1.15 eV material lattice-matched to GaAs/Ge. Nevertheless, the lack of suitable semiconductor materials is hindering the achievement of the predicted efficiencies, since the only candidates were up to now complex quaternary and quinary alloys with inherent epitaxial growth problems that degrade carrier dynamics. Here we show how the use of strain-balanced GaAsSb/GaAsN superlattices might solve this problem. We demonstrate that the spatial separation of Sb and N atoms avoids the ubiquitous growth problems and improves crystal quality. Moreover, these new structures allow for additional control of the effective bandgap through the period thickness and provide a type-II band alignment with long carrier lifetimes. All this leads to a strong enhancement of the external quantum efficiency under photovoltaic conditions with respect to bulk layers of equivalent thickness. Our results show that GaAsSb/GaAsN superlattices with short periods are the ideal (pseudo)material to be integrated in new GaAs/Ge-based multi-junction solar cells that could approach the theoretical efficiency limit.

Towards improved photovoltaic conversion using dilute magnetic semiconductors (abstract only)

NASA Astrophysics Data System (ADS)

Olsson, Pär; Guillemoles, J.-F.; Domain, C.

2008-02-01

Present photovoltaic devices, based on p/n junctions, are limited from first principles to maximal efficiencies of 31% (40% under full solar concentration; Shockley and Queisser 1961 J. Appl. Phys. 32 510). However, more innovative schemes may overcome the Shockley-Queisser limit since the theoretical maximal efficiency of solar energy conversion is higher than 85% (Harder and Würfel 2003 Semicond. Sci. Technol. 18 S151). To date, the only practical realization of such an innovative scheme has been multi-junction devices, which at present hold the world record for efficiency at nearly 41% at significant solar concentration (US DOE news site: http://www.energy.gov/news/4503.htm). It has been proposed that one could make use of the solar spectrum in much the same way as the multi-junction devices do but in a single cell, using impurity induced intermediate levels to create gaps of different sizes. This intermediate level semiconductor (ILSC) concept (Green and Wenham 1994 Appl. Phys. Lett. 65 2907; Luque and Martí1997 Phys. Rev. Lett. 78 5014) has a maximal efficiency similar to that of multi-junction devices but suffers from prohibitively large non-radiative recombination rates. We here propose to use a ferromagnetic impurity scheme in order to reduce the non-radiative recombination rates while maintaining the high theoretical maximum efficiency of the ILSC scheme, that is about 46%. Using density functional theory calculations, the electronic and energetic properties of transition metal impurities for a wide range of semiconductors have been analysed. Of the several hundred compounds studied, only a few fulfil the design criteria that we present here. As an example, wide gap AlP is one of the most promising compounds. It was found that inclusion of significant amounts of Mn in AlP induces band structures providing conversion efficiencies potentially close to the theoretical maximum, with an estimated Curie temperature reaching above 100 K.

Multijunction Solar Cell Development and Production at Spectrolab

NASA Technical Reports Server (NTRS)

Fetzer, Chris; King, R. R.; Law, D. C.; Edmondson, K. M.; Isshiki, T.; Haddad, M.; Zhang, X.; Boisvert, J. C.; Joslin, D. E.; Karam, N. H.

2007-01-01

Development of multijunction space solar cells is much like that for any high technology product. New products face two major pressures from the market: improving performance while maintaining heritage. This duality of purpose is not new and has been represented since ancient times by the Roman god Janus.[1] This deity was typically represented as two faces on a single head: one facing forward and the other to the rear. The image of Janus has been used as symbolism for many combined forces of dual purpose, such as the balance in life between beginnings and endings, or between art and science. For our purposes, Janus represents our design philosophy balance between looking to the future for improvement while simultaneously blending past heritage. In the space photovoltaics industry there are good reasons for both purposes. Looking to the past, a product must have a space flight heritage to gain widespread use. The main reason being that this is an unforgiving business. Spacecraft are expensive to build, launch and operate. Typically once a satellite is launched, in-field service for a power systems problem is near impossible.[2Balanced with this is looking forward. New missions typically require more power than previous programs or attempt new objectives such as a new orbit. And there is always the cost pressure for both the satellite itself as well as the launch costs. Both of which push solar technology to improve power density at a lower cost. The consequence of this balance in a high-risk environment is that space PV develops as a series of infrequent large technology steps or generational changes interspersed with more frequent small technology steps or evolutionary changes. Figure 1 gives a bit of clarification on this point. It depicts the historical progress in space solar cells tracked by efficiency against first launch date for most major products introduced by Spectrolab. The first generation is the Si-based technology reaching a peak values near 15% AM0 (herein denoted for max. power, AM0, 1.353 W/cm2, 28 C). The GaAs single junction device generation supplanted this technology with first flight of GaAs on GaAs substrate in 1982.[3] More recently this generation has been supplanted by the multijunction solar cell GaInP/GaAs/Ge generation. The first launch of a commercial satellite powered by multijunction technology was in 1997 (Hughes HS 601HP) using solar arrays based on Spectrolab s dual junction (DJ) cells. The cells at that time were an impressive 21.5% efficient at beginning-of-life (BOL).[4] Eight years later, the multijunction device has evolved through several versions. The incorporation of an active Ge subcell formed the Triple Junction (TJ) product line at 25.1% efficient, on orbit since November 2001. The evolution of the TJ into the Improved Triple Junction (ITJ) at 26.8% efficient has been on orbit since June of 2002.[5

Solar concentrator modules with silicone-on-glass Fresnel lens panels and multijunction cells.

PubMed

Rumyantsev, Valery D

2010-04-26

High-efficiency multijunction (MJ) solar cells, being very expensive to manufacture, should only be used in combination with solar concentrators in terrestrial applications. An essential cost reduction of electric power produced by photovoltaic (PV) installations with MJ cells, may be expected by the creation of highly-effective, but inexpensive, elements for optical concentration and sun tracking. This article is an overview of the corresponding approach under development at the Ioffe Physical Technical Institute. The approach to R&D of the solar PV modules is based on the concepts of sunlight concentration by small-aperture area Fresnel lenses and "all-glass" module design. The small-aperture area lenses are arranged as a panel with silicone-on-glass structure where the glass plate serves as the front surface of a module. In turn, high-efficiency InGaP/(In)GaAs/Ge cells are arranged on a rear module panel mounted on a glass plate which functions as a heat sink and integrated protective cover for the cells. The developed PV modules and sun trackers are characterized by simple design, and are regarded as the prototypes for further commercialization.

Design High-Efficiency III-V Nanowire/Si Two-Junction Solar Cell.

PubMed

Wang, Y; Zhang, Y; Zhang, D; He, S; Li, X

2015-12-01

In this paper, we report the electrical simulation results of a proposed GaInP nanowire (NW)/Si two-junction solar cell. The NW physical dimensions are determined for optimized solar energy absorption and current matching between each subcell. Two key factors (minority carrier lifetime, surface recombination velocity) affecting power conversion efficiency (PCE) of the solar cell are highlighted, and a practical guideline to design high-efficiency two-junction solar cell is thus provided. Considering the practical surface and bulk defects in GaInP semiconductor, a promising PCE of 27.5 % can be obtained. The results depict the usefulness of integrating NWs to construct high-efficiency multi-junction III-V solar cells.

Chemical beam epitaxy for high efficiency photovoltaic devices

NASA Technical Reports Server (NTRS)

Bensaoula, A.; Freundlich, A.; Vilela, M. F.; Medelci, N.; Renaud, P.

1994-01-01

InP-based multijunction tandem solar cells show great promise for the conversion efficiency (eta) and high radiation resistance. InP and its related ternary and quanternary compound semiconductors such as InGaAs and InGaAsP offer desirable combinations for energy bandgap values which are very suitable for multijunction tandem solar cell applications. The monolithically integrated InP/In(0.53)Ga(0.47)As tandem solar cells are expected to reach efficiencies above 30 percent. Wanlass, et.al., have reported AMO efficiencies as high as 20.1% for two terminal cells fabricated using atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). The main limitations in their technique are first related to the degradation of the intercell ohmic contact (IOC), in this case the In(0.53)Ga(0.47)As tunnel junction during the growth of the top InP subcell structure, and second to the current matching, often limited by the In(0.53)Ga(0.47)As bottom subcell. Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450 C - 530 C). In a recent report it was shown that cost-wise CBE is a breakthrough technology for photovoltaic (PV) solar energy progress in the energy conversion efficiency of InP-based solar cells fabricated using chemical beam epitaxy. This communication summarizes our recent results on PV devices and demonstrates the strength of this new technology.

Straw man trade between multi-junction, gallium arsenide, and silicon solar cells

NASA Technical Reports Server (NTRS)

Gaddy, Edward M.

1995-01-01

Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency solar cells for TRMM is far greater than the uncertainties in the analysis.

Cost Trade Between Multi-Junction, Gallium Arsenide, and Silicon Solar Cells

NASA Technical Reports Server (NTRS)

Gaddy, Edward M.

1995-01-01

Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar 2 cells and cost approximately five times as much per unit power at the cell level. A trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552,000 dollars per kilogram to launch and suppon3science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. ff the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and supported at a price of approximately $58,000 per kilogram. The trade shows that even if the multi-junction cells are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $180,000 per kilogram. This is still much less than the original $552,000 per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency solar cells for TRMM is far greater than the uncertainties in the analysis.

Solar energy converters based on multi-junction photoemission solar cells.

PubMed

Tereshchenko, O E; Golyashov, V A; Rodionov, A A; Chistokhin, I B; Kislykh, N V; Mironov, A V; Aksenov, V V

2017-11-23

Multi-junction solar cells with multiple p-n junctions made of different semiconductor materials have multiple bandgaps that allow reducing the relaxation energy loss and substantially increase the power-conversion efficiency. The choice of materials for each sub-cell is very limited due to the difficulties in extracting the current between the layers caused by the requirements for lattice- and current-matching. We propose a new vacuum multi-junction solar cell with multiple p-n junctions separated by vacuum gaps that allow using different semiconductor materials as cathode and anode, both activated to the state of effective negative electron affinity (NEA). In this work, the compact proximity focused vacuum tube with the GaAs(Cs,O) photocathode and AlGaAs/GaAs-(Cs,O) anode with GaAs quantum wells (QWs) is used as a prototype of a vacuum single-junction solar cell. The photodiode with the p-AlGaAs/GaAs anode showed the spectral power-conversion efficiency of about 1% at V bias  = 0 in transmission and reflection modes, while, at V bias  = 0.5 V, the efficiency increased up to 10%. In terms of energy conservation, we found the condition at which the energy cathode-to-anode transition was close to 1. Considering only the energy conservation part, the NEA-cell power-conversion efficiency can rich a quantum yield value which is measured up to more than 50%.

Developing Efficient Charge-Selective Interfacial Materials for Polymer and Perovskite Solar Cells

DTIC Science & Technology

2016-01-25

Materials for Polymer and Pervskite Solar Cells 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-14-1-4066 5c.  PROGRAM ELEMENT NUMBER 61102F 6. AUTHOR(S) Alex K...fabrication of multi-junction organic and perovskite solar cells to reach high efficiency, low-cost, and good stability. To gain insights in these...assemble monolayer (SAMs) are being developed and optimized to meet criteria for organic/perovskite hybrid PVs : i) having the ability to promote Ohmic

Equipment Loan for Concentrated PV Cavity Converter (PVCC) Research: Cooperative Research and Development Final Report, CRADA Number CRD-08-285

DOE Office of Scientific and Technical Information (OSTI.GOV)

Netter, Judy

2015-07-28

Interest in High Concentration Photovoltaics (HCPV) for terrestrial applications has significantly grown in recent years. A major driver behind this growth trend is the availability of high efficiency multi-junction (MJ) cells that promise reliable operation under high concentrations (500 to 1000 suns). The primary impact of HCPV on the solar electricity cost is the dramatic reduction in cell cost. For terrestrial HCPV systems, operating at concentrations ≥ 500 suns, the expensive MJ cells are marginally affordable. Most recently, triple-junction test cells have achieved a conversion efficiency of over 40% under concentrated sunlight. Photovoltaic Cavity Converter (PVCC) is a multi-bandgap, highmore » concentration PV device developed by United Innovations, Inc., under subcontract to NREL. The lateral- (2- dimensional) structure of PVCC, as opposed to vertical multi-junction (MJ) structure, helps to circumvent most of the developmental challenges MJ technology has yet to overcome. This CRADA will allow the continued development of this technology by United Innovations. This project was funded by the California Energy Commission and is the second phase of a twopart demonstration program. The key advantage of the design was the use of a PVCC as the receiver. PVCCs efficiently process highly concentrated solar radiation into electricity by recycling photons that are reflected from the surface of the cells. Conventional flat, twodimensional receivers cannot recycle photons and the reflected photons are lost to the conversion process.« less

Thermal management approaches of Cu(In x ,Ga1-x )Se2 micro-solar cells

NASA Astrophysics Data System (ADS)

Sancho-Martínez, Diego; Schmid, Martina

2017-11-01

Concentrator photovoltaics (CPV) is a cost-effective method for generating electricity in regions that have a large fraction of direct solar radiation. With the help of lenses, sunlight is concentrated onto miniature, highly efficient multi-junction solar cells with a photovoltaic performance above 40%. To ensure illumination with direct radiation, CPV modules must be installed on trackers to follow the sun’s path. However, the costs of huge concentration optics and the photovoltaic technology used, narrow the market possibilities for CPV technology. Efforts to reduce these costs are being undertaken by the promotion of Cu(In x ,Ga1-x )Se2 solar cells to take over the high cost multi-junction solar cells and implementing more compact devices by minimization of solar cell area. Micrometer-sized absorbers have the potential of low cost, high efficiencies and good thermal dissipation under concentrated illumination. Heat dissipation at low (<10×) to medium (10  ×  to 100×) flux density distributions is the key point of high concentration studies for macro- and micro-sized solar cells (from 1 µm2 to 1 mm2). To study this thermal process and to optimize it, critical parameters must be taken in account: absorber area, substrate area and thickness, structure design, heat transfer mechanism, concentration factor and illumination profile. A close study on them will be carried out to determine the best structure to enhance and reach the highest possible thermal management pointing to an efficiency improvement.

Increasing Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

DOEpatents

Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

1999-08-24

High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Increased Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

DOEpatents

Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

1997-07-08

High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Triple-junction thin-film silicon solar cell fabricated on periodically textured substrate with a stabilized efficiency of 13.6%

NASA Astrophysics Data System (ADS)

Sai, Hitoshi; Matsui, Takuya; Koida, Takashi; Matsubara, Koji; Kondo, Michio; Sugiyama, Shuichiro; Katayama, Hirotaka; Takeuchi, Yoshiaki; Yoshida, Isao

2015-05-01

We report a high-efficiency triple-junction thin-film silicon solar cell fabricated with the so-called substrate configuration. It was verified whether the design criteria for developing single-junction microcrystalline silicon (μc-Si:H) solar cells are applicable to multijunction solar cells. Furthermore, a notably high short-circuit current density of 32.9 mA/cm2 was achieved in a single-junction μc-Si:H cell fabricated on a periodically textured substrate with a high-mobility front transparent contacting layer. These technologies were also combined into a-Si:H/μc-Si:H/μc-Si:H triple-junction cells, and a world record stabilized efficiency of 13.6% was achieved.

Current-matched high-efficiency, multijunction monolithic solar cells

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.

1993-01-01

The efficiency of a two-junction (cascade) tandem photovoltaic device is improved by adjusting (decreasing) the top cell thickness to achieve current matching. An example of the invention was fabricated out of Ga.sub.0.52 In.sub.0.48 P and GaAs. Additional lattice-matched systems to which the invention pertains include Al.sub.x Ga.sub.1-x /GaAS (x= 0.3-0.4), GaAs/Ge and Ga.sub.y In.sub.l-y P/Ga.sub.y+0.5 In.sub.0.5-y As (0

Spectral and Concentration Sensitivity of Multijunction Solar Cells at High Temperature: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Friedman, Daniel J.; Steiner, Myles A.; Perl, Emmett E.

2017-06-14

We model the performance of two-junction solar cells at very high temperatures of ~400 degrees C and beyond for applications such as hybrid PV/solar-thermal power production, and identify areas in which the design and performance characteristics behave significantly differently than at more conventional near-room-temperature operating conditions. We show that high-temperature operation reduces the sensitivity of the cell efficiency to spectral content, but increases the sensitivity to concentration, both of which have implications for energy yield in terrestrial PV applications. For other high-temperature applications such as near-sun space missions, our findings indicate that concentration may be a useful tool to enhancemore » cell efficiency.« less

Selenium Interlayer for High-Efficiency Multijunction Solar Cell

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A (Inventor)

2015-01-01

A multi junction solar cell is provided and includes multiple semiconducting layers and an interface layer disposed between the multiple semiconducting layers. The interface layer is made from an interface bonding material that has a refractive index such that a ratio of a refractive index of each of the multiple semiconducting layers to the refractive index of the interface bonding material is less than or equal to 1.5.

Wide-Bandgap CIAS Thin-film Photovoltaics with Transparent Back Contacts for Next-Generation Single and Multijunction Devices

NASA Technical Reports Server (NTRS)

Woods, Lawrence M.; Kalla, Ajay; Gonzalez, Damian; Ribelin, Rosine

2005-01-01

Future spacecraft and high-altitude airship (HAA) technologies will require high array specific power (W/kg), which can be met using thin-film photovoltaics (PV) on lightweight and flexible substrates. It has been calculated that the thin-film array technology, including the array support structure, begins to exceed the specific power of crystalline multi-junction arrays when the thin-film device efficiencies begin to exceed 12%. Thin-film PV devices have other advantages in that they are more easily integrated into HAA s, and are projected to be much less costly than their crystalline PV counterparts. Furthermore, it is likely that only thin-film array technology will be able to meet device specific power requirements exceeding 1 kW/kg (photovoltaic and integrated substrate/blanket mass only). Of the various thin-film technologies, single junction and radiation resistant CuInSe2 (CIS) and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of thin-film device performance, with the best efficiency, reaching 19.2% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys could achieve the highest levels of thin-film space and HAA solar array performance.

Antireflective coatings for multijunction solar cells under wide-angle ray bundles.

PubMed

Victoria, Marta; Domínguez, César; Antón, Ignacio; Sala, Gabriel

2012-03-26

Two important aspects must be considered when optimizing antireflection coatings (ARCs) for multijunction solar cells to be used in concentrators: the angular light distribution over the cell created by the particular concentration system and the wide spectral bandwidth the solar cell is sensitive to. In this article, a numerical optimization procedure and its results are presented. The potential efficiency enhancement by means of ARC optimization is calculated for several concentrating PV systems. In addition, two methods for ARCs direct characterization are presented. The results of these show that real ARCs slightly underperform theoretical predictions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Emery, K.

Evaluate MicroLink cells as a function of temperature and spectral irradiance following the teams' standard procedures. These measurements will include the standard procedures for evaluating multijunction cells including quantum efficiency measurements and current versus voltage measurements.

Indium Gallium Nitride Multijunction Solar Cell Simulation Using Silvaco Atlas

DTIC Science & Technology

2007-06-01

models is of great interest in space applications. By increasing the efficiency of photovoltaics, the number of solar panels is decreased. Therefore...obtained in single-junction solar cells by using Gallium Arsenide. Monocrystalline Gallium Arsenide has a maximum efficiency of approximately 25.1% [10

Multijunction high-voltage solar cell

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr.; Goradia, C.; Chai, A. T.

1981-01-01

Multijunction cell allows for fabrication of high-voltage solar cell on single semiconductor wafer. Photovoltaic energy source using cell is combined on wafer with circuit it is to power. Cell consists of many voltage-generating regions internally or externally interconnected to give desired voltage and current combination. For computer applications, module is built on silicon wafer with energy for internal information processing and readouts derived from external light source.

Fabrication of multijunction high voltage concentrator solar cells by integrated circuit technology

NASA Technical Reports Server (NTRS)

Valco, G. J.; Kapoor, V. J.; Evans, J. C., Jr.; Chai, A.-T.

1981-01-01

Standard integrated circuit technology has been developed for the design and fabrication of planar multijunction (PMJ) solar cell chips. Each 1 cm x 1 cm solar chip consisted of six n(+)/p, back contacted, internally series interconnected unit cells. These high open circuit voltage solar cells were fabricated on 2 ohm-cm, p-type 75 microns thick, silicon substrates. A five photomask level process employing contact photolithography was used to pattern for boron diffusions, phorphorus diffusions, and contact metallization. Fabricated devices demonstrated an open circuit voltage of 3.6 volts and a short circuit current of 90 mA at 80 AMl suns. An equivalent circuit model of the planar multi-junction solar cell was developed.

Current and lattice matched tandem solar cell

DOEpatents

Olson, Jerry M.

1987-01-01

A multijunction (cascade) tandem photovoltaic solar cell device is fabricated of a Ga.sub.x In.sub.1-x P (0.505.ltoreq.X.ltoreq.0.515) top cell semiconductor lattice matched to a GaAs bottom cell semiconductor at a low-resistance heterojunction, preferably a p+/n+ heterojunction between the cells. The top and bottom cells are both lattice matched and current matched for high efficiency solar radiation conversion to electrical energy.

Superstructure high efficiency photovoltaics

NASA Technical Reports Server (NTRS)

Wagner, M.; So, L. C.; Leburton, J. P.

1987-01-01

A novel class of photovoltaic cascade structures is introduced which features multijunction upper subcells. These superstructure high efficiency photovoltaics (SHEP's) exhibit enhanced upper subcell spectral response because of the additional junctions which serve to reduce bulk recombination losses by decreasing the mean collection distance for photogenerated minority carriers. Two possible electrical configurations were studied and compared: a three-terminal scheme that allows both subcells to be operated at their individual maximum power points and a two-terminal configuration with an intercell ohmic contact for series interconnection. The three-terminal devices were found to be superior both in terms of beginning-of-life expectancy and radiation tolerance. Realistic simulations of three-terminal AlGaAs/GaAs SHEP's show that one sun AMO efficiencies in excess of 26 percent are possible.

Raising the one-sun conversion efficiency of III-V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions

NASA Astrophysics Data System (ADS)

Essig, Stephanie; Allebé, Christophe; Remo, Timothy; Geisz, John F.; Steiner, Myles A.; Horowitz, Kelsey; Barraud, Loris; Ward, J. Scott; Schnabel, Manuel; Descoeudres, Antoine; Young, David L.; Woodhouse, Michael; Despeisse, Matthieu; Ballif, Christophe; Tamboli, Adele

2017-09-01

Today's dominant photovoltaic technologies rely on single-junction devices, which are approaching their practical efficiency limit of 25-27%. Therefore, researchers are increasingly turning to multi-junction devices, which consist of two or more stacked subcells, each absorbing a different part of the solar spectrum. Here, we show that dual-junction III-V//Sidevices with mechanically stacked, independently operated III-V and Si cells reach cumulative one-sun efficiencies up to 32.8%. Efficiencies up to 35.9% were achieved when combining a GaInP/GaAs dual-junction cell with a Si single-junction cell. These efficiencies exceed both the theoretical 29.4% efficiency limit of conventional Si technology and the efficiency of the record III-V dual-junction device (32.6%), highlighting the potential of Si-based multi-junction solar cells. However, techno-economic analysis reveals an order-of-magnitude disparity between the costs for III-V//Si tandem cells and conventional Si solar cells, which can be reduced if research advances in low-cost III-V growth techniques and new substrate materials are successful.

Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Essig, Stephanie; Allebé, Christophe; Remo, Timothy

Today's dominant photovoltaic technologies rely on single-junction devices, which are approaching their practical efficiency limit of 25-27%. Therefore, researchers are increasingly turning to multi-junction devices, which consist of two or more stacked subcells, each absorbing a different part of the solar spectrum. Here, we show that dual-junction III-V//Sidevices with mechanically stacked, independently operated III-V and Si cells reach cumulative one-sun efficiencies up to 32.8%. Efficiencies up to 35.9% were achieved when combining a GaInP/GaAs dual-junction cell with a Si single-junction cell. These efficiencies exceed both the theoretical 29.4% efficiency limit of conventional Si technology and the efficiency of the recordmore » III-V dual-junction device (32.6%), highlighting the potential of Si-based multi-junction solar cells. However, techno-economic analysis reveals an order-of-magnitude disparity between the costs for III-V//Si tandem cells and conventional Si solar cells, which can be reduced if research advances in low-cost III-V growth techniques and new substrate materials are successful.« less

Hybrid photovoltaic and thermoelectric module for high concentration solar system

NASA Astrophysics Data System (ADS)

Tamaki, Ryo; Toyoda, Takeshi; Tamura, Yoichi; Matoba, Akinari; Minamikawa, Toshiharu; Tokuda, Masayuki; Masui, Megumi; Okada, Yoshitaka

2017-09-01

A photovoltaic (PV) and thermoelectric (TE) hybrid module was developed for application to high concentration solar systems. The waste heat from the solar cells under concentrated light illumination was utilized to generate additional electricity by assembling TE devices below the multi-junction solar cells (MJSCs). Considering the high operating temperature of the PV and TE hybrid module compared with conventional concentrator PV modules, the TE device could compensate a part of the MJSC efficiency degradation at high temperature. The performance investigation clarified the feasibility of the hybrid PV and TE module under highly concentrated sunlight illumination.

Semiconductor solar cells: Recent progress in terrestrial applications

NASA Astrophysics Data System (ADS)

Avrutin, V.; Izyumskaya, N.; Morkoç, H.

2011-04-01

In the last decade, the photovoltaic industry grew at a rate exceeding 30% per year. Currently, solar-cell modules based on single-crystal and large-grain polycrystalline silicon wafers comprise more than 80% of the market. Bulk Si photovoltaics, which benefit from the highly advanced growth and fabrication processes developed for microelectronics industry, is a mature technology. The light-to-electric power conversion efficiency of the best modules offered on the market is over 20%. While there is still room for improvement, the device performance is approaching the thermodynamic limit of ˜28% for single-junction Si solar cells. The major challenge that the bulk Si solar cells face is, however, the cost reduction. The potential for price reduction of electrical power generated by wafer-based Si modules is limited by the cost of bulk Si wafers, making the electrical power cost substantially higher than that generated by combustion of fossil fuels. One major strategy to bring down the cost of electricity generated by photovoltaic modules is thin-film solar cells, whose production does not require expensive semiconductor substrates and very high temperatures and thus allows decreasing the cost per unit area while retaining a reasonable efficiency. Thin-film solar cells based on amorphous, microcrystalline, and polycrystalline Si as well as cadmium telluride and copper indium diselenide compound semiconductors have already proved their commercial viability and their market share is increasing rapidly. Another avenue to reduce the cost of photovoltaic electricity is to increase the cell efficiency beyond the Shockley-Queisser limit. A variety of concepts proposed along this avenue forms the basis of the so-called third generation photovoltaics technologies. Among these approaches, high-efficiency multi-junction solar cells based on III-V compound semiconductors, which initially found uses in space applications, are now being developed for terrestrial applications. In this article, we discuss the progress, outstanding problems, and environmental issues associated with bulk Si, thin-film, and high-efficiency multi-junction solar cells.

Modeling, Growth and Characterization of III-V and Dilute Nitride Antimonide Materials and Solar Cells

NASA Astrophysics Data System (ADS)

Maros, Aymeric

III-V multijunction solar cells have demonstrated record efficiencies with the best device currently at 46 % under concentration. Dilute nitride materials such as GaInNAsSb have been identified as a prime choice for the development of high efficiency, monolithic and lattice-matched multijunction solar cells as they can be lattice-matched to both GaAs and Ge substrates. These types of cells have demonstrated efficiencies of 44% for terrestrial concentrators, and with their upright configuration, they are a direct drop-in product for today's space and concentrator solar panels. The work presented in this dissertation has focused on the development of relatively novel dilute nitride antimonide (GaNAsSb) materials and solar cells using plasma-assisted molecular beam epitaxy, along with the modeling and characterization of single- and multijunction solar cells. Nitrogen-free ternary compounds such as GaInAs and GaAsSb were investigated first in order to understand their structural and optical properties prior to introducing nitrogen. The formation of extended defects and the resulting strain relaxation in these lattice-mismatched materials is investigated through extensive structural characterization. Temperature- and power-dependent photoluminescence revealed an inhomogeneous distribution of Sb in GaAsSb films, leading to carrier localization effects at low temperatures. Tuning of the growth parameters was shown to suppress these Sb-induced localized states. The introduction of nitrogen was then considered and the growth process was optimized to obtain high quality GaNAsSb films lattice-matched to GaAs. Near 1-eV single-junction GaNAsSb solar cells were produced. The best devices used a p-n heterojunction configuration and demonstrated a current density of 20.8 mA/cm2, a fill factor of 64 % and an open-circuit voltage of 0.39 V, corresponding to a bandgap-voltage offset of 0.57 V, comparable with the state-of-the-art for this type of solar cells. Post-growth annealing was found to be essential to improve Voc but was also found to degrade the material quality of the top layers. Alternatives are discussed to improve this process. Unintentional high background doping was identified as the main factor limiting the device performance. The use of Bi-surfactant mediated growth is proposed for the first time for this material system to reduce this background doping and preliminary results are presented.

Planar multijunction high voltage solar cells

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr.; Chai, A. T.; Goradia, C.

1980-01-01

Technical considerations, preliminary results, and fabrication details are discussed for a family of high-voltage planar multi-junction (PMJ) solar cells which combine the attractive features of planar cells with conventional or interdigitated back contacts and the vertical multijunction (VMJ) solar cell. The PMJ solar cell is internally divided into many voltage-generating regions, called unit cells, which are internally connected in series. The key to obtaining reasonable performance from this device was the separation of top surface field regions over each active unit cell. Using existing solar cell fabricating methods, output voltages in excess of 20 volts per linear centimeter are possible. Analysis of the new device is complex, and numerous geometries are being studied which should provide substantial benefits in both normal sunlight usage as well as with concentrators.

Solar cell circuit and method for manufacturing solar cells

NASA Technical Reports Server (NTRS)

Mardesich, Nick (Inventor)

2010-01-01

The invention is a novel manufacturing method for making multi-junction solar cell circuits that addresses current problems associated with such circuits by allowing the formation of integral diodes in the cells and allows for a large number of circuits to readily be placed on a single silicon wafer substrate. The standard Ge wafer used as the base for multi-junction solar cells is replaced with a thinner layer of Ge or a II-V semiconductor material on a silicon/silicon dioxide substrate. This allows high-voltage cells with multiple multi-junction circuits to be manufactured on a single wafer, resulting in less array assembly mass and simplified power management.

Towards the Ultimate Multi-Junction Solar Cell using Transfer Printing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lumb, Matthew P.; Meitl, Matt; Schmieder, Kenneth J.

2016-11-21

Transfer printing is a uniquely enabling technology for the heterogeneous integration of III-V materials grown on dissimilar substrates. In this paper, we present experimental results for a mechanically stacked tandem cell using GaAs and GaSb-based materials capable of harvesting the entire solar spectrum with 44.5% efficiency. We also present the latest results toward developing an ultra-high performance heterogeneous cell, integrating materials grown on GaAs, InP and GaSb platforms.

IEEE Photovoltaic Specialists Conference, 20th, Las Vegas, NV, Sept. 26-30, 1988, Conference Record. Volumes 1 & 2

NASA Astrophysics Data System (ADS)

Various papers on photovoltaics are presented. The general topics considered include: amorphous materials and cells; amorphous silicon-based solar cells and modules; amorphous silicon-based materials and processes; amorphous materials characterization; amorphous silicon; high-efficiency single crystal solar cells; multijunction and heterojunction cells; high-efficiency III-V cells; modeling and characterization of high-efficiency cells; LIPS flight experience; space mission requirements and technology; advanced space solar cell technology; space environmental effects and modeling; space solar cell and array technology; terrestrial systems and array technology; terrestrial utility and stand-alone applications and testing; terrestrial concentrator and storage technology; terrestrial stand-alone systems applications; terrestrial systems test and evaluation; terrestrial flatplate and concentrator technology; use of polycrystalline materials; polycrystalline II-VI compound solar cells; analysis of and fabrication procedures for compound solar cells.

NREL/Boeing Spectrolab Team Wins Research and Development Award | News |

Science.gov Websites

approach represents a powerful new technology for designing super-efficient multi-junction solar cells. The results in superior electrical performance. But, with the HEMM approach, the atoms are unevenly spaced

Lightweight IMM PV Flexible Blanket Assembly

NASA Technical Reports Server (NTRS)

Spence, Brian

2015-01-01

Deployable Space Systems (DSS) has developed an inverted metamorphic multijunction (IMM) photovoltaic (PV) integrated modular blanket assembly (IMBA) that can be rolled or z-folded. This IMM PV IMBA technology enables a revolutionary flexible PV blanket assembly that provides high specific power, exceptional stowed packaging efficiency, and high-voltage operation capability. DSS's technology also accommodates standard third-generation triple junction (ZTJ) PV device technologies to provide significantly improved performance over the current state of the art. This SBIR project demonstrated prototype, flight-like IMM PV IMBA panel assemblies specifically developed, designed, and optimized for NASA's high-voltage solar array missions.

NREL, Swiss Scientists Power Past Solar Efficiency Records | NREL | News |

Science.gov Websites

of these multijunction silicon-based solar cells, at least in the near term, is the cost. Assuming 30 % efficiency, the researchers estimated the GaInP-based cell would cost $4.85 per watt and the GaAs-based cell would cost $7.15 per watt. But as manufacturing ramps up and the efficiencies of these types of cells

Electrodeposition of Metal Matrix Composites and Materials Characterization for Thin-Film Solar Cells

DTIC Science & Technology

2017-12-04

34High-Concentration III-V Multijunction Solar Cells," 2017, <http://www.nrel.gov/ pv /high-concentration-iii-v-multijunction- solar - cells.html>. O. K...AFRL-RV-PS- AFRL-RV-PS- TR-2017-0174 TR-2017-0174 ELECTRODEPOSITION OF METAL MATRIX COMPOSITES AND MATERIALS CHARACTERIZATION FOR THIN-FILM SOLAR ...0242 Electrodeposition of Metal Matrix Composites and Materials Characterization for Thin-Film Solar Cells 5b. GRANT NUMBER 5c. PROGRAM ELEMENT

Optimization of antireflection coating design for multijunction solar cells and concentrator systems

NASA Astrophysics Data System (ADS)

Valdivia, Christopher E.; Desfonds, Eric; Masson, Denis; Fafard, Simon; Carlson, Andrew; Cook, John; Hall, Trevor J.; Hinzer, Karin

2008-06-01

Photovoltaic solar cells are a route towards local, environmentally benign, sustainable and affordable energy solutions. Antireflection coatings are necessary to input a high percentage of available light for photovoltaic conversion, and therefore have been widely exploited for silicon solar cells. Multi-junction III-V semiconductor solar cells have achieved the highest efficiencies of any photovoltaic technology, yielding up to 40% in the laboratory and 37% in commercial devices under varying levels of concentrated light. These devices benefit from a wide absorption spectrum (300- 1800 nm), but this also introduces significant challenges for antireflection coating design. Each sub-cell junction is electrically connected in series, limiting the overall device photocurrent by the lowest current-producing junction. Therefore, antireflection coating optimization must maximize the current from the limiting sub-cells at the expense of the others. Solar concentration, necessary for economical terrestrial deployment of multi-junction solar cells, introduces an angular-dependent irradiance spectrum. Antireflection coatings are optimized for both direct normal incidence in air and angular incidence in an Opel Mk-I concentrator, resulting in as little as 1-2% loss in photocurrent as compared to an ideal zero-reflectance solar cell, showing a similar performance to antireflection coatings on silicon solar cells. A transparent conductive oxide layer has also been considered to replace the metallic-grid front electrode and for inclusion as part of a multi-layer antireflection coating. Optimization of the solar cell, antireflection coating, and concentrator system should be considered simultaneously to enable overall optimal device performance.

Current- and lattice-matched tandem solar cell

DOEpatents

Olson, J.M.

1985-10-21

A multijunction (cascade) tandem photovoltaic solar cell device is fabricated of a Ga/sub x/In/sub 1-x/P (0.505 equal to or less than x equal to or less than 0.515) top cell semiconductor lattice-matched to a GaAs bottom cell semiconductor at a low resistance heterojunction, preferably a p/sup +//n/sup +/ heterojunction between the cells. The top and bottom cells are both lattice-matched and current-matched for high efficiency solar radiation conversion to electrical energy.

Holographic spectrum-splitting optical systems for solar photovoltaics

NASA Astrophysics Data System (ADS)

Zhang, Deming

Solar energy is the most abundant source of renewable energy available. The relatively high cost prevents solar photovoltaic (PV) from replacing fossil fuel on a larger scale. In solar PV power generation the cost is reduced with more efficient PV technologies. In this dissertation, methods to improve PV conversion efficiency with holographic optical components are discussed. The tandem multiple-junction approach has achieved very high conversion efficiency. However it is impossible to manufacture tandem PV cells at a low cost due to stringent fabrication standards and limited material types that satisfy lattice compatibility. Current produced by the tandem multi-junction PV cell is limited by the lowest junction due to series connection. Spectrum-splitting is a lateral multi-junction concept that is free of lattice and current matching constraints. Each PV cell can be optimized towards full absorption of a spectral band with tailored light-trapping schemes. Holographic optical components are designed to achieve spectrum-splitting PV energy conversion. The incident solar spectrum is separated onto multiple PV cells that are matched to the corresponding spectral band. Holographic spectrum-splitting can take advantage of existing and future low-cost technologies that produces high efficiency thin-film solar cells. Spectrum-splitting optical systems are designed and analyzed with both transmission and reflection holographic optical components. Prototype holograms are fabricated and high optical efficiency is achieved. Light-trapping in PV cells increases the effective optical path-length in the semiconductor material leading to improved absorption and conversion efficiency. It has been shown that the effective optical path length can be increased by a factor of 4n2 using diffusive surfaces. Ultra-light-trapping can be achieved with optical filters that limit the escape angle of the diffused light. Holographic reflection gratings have been shown to act as angle-wavelength selective filters that can function as ultra-light-trapping filters. Results from an experimental reflection hologram are used to model the absorption enhancement factor for a silicon solar cell and light-trapping filter. The result shows a significant improvement in current generation for thin-film silicon solar cells under typical operating conditions.

High-efficiency solar cell and method for fabrication

DOEpatents

Hou, Hong Q.; Reinhardt, Kitt C.

1999-01-01

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD).

High-efficiency solar cell and method for fabrication

DOEpatents

Hou, H.Q.; Reinhardt, K.C.

1999-08-31

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). 4 figs.

Design Strategies for Ultra-high Efficiency Photovoltaics

NASA Astrophysics Data System (ADS)

Warmann, Emily Cathryn

While concentrator photovoltaic cells have shown significant improvements in efficiency in the past ten years, once these cells are integrated into concentrating optics, connected to a power conditioning system and deployed in the field, the overall module efficiency drops to only 34 to 36%. This efficiency is impressive compared to conventional flat plate modules, but it is far short of the theoretical limits for solar energy conversion. Designing a system capable of achieving ultra high efficiency of 50% or greater cannot be achieved by refinement and iteration of current design approaches. This thesis takes a systems approach to designing a photovoltaic system capable of 50% efficient performance using conventional diode-based solar cells. The effort began with an exploration of the limiting efficiency of spectrum splitting ensembles with 2 to 20 sub cells in different electrical configurations. Incorporating realistic non-ideal performance with the computationally simple detailed balance approach resulted in practical limits that are useful to identify specific cell performance requirements. This effort quantified the relative benefit of additional cells and concentration for system efficiency, which will help in designing practical optical systems. Efforts to improve the quality of the solar cells themselves focused on the development of tunable lattice constant epitaxial templates. Initially intended to enable lattice matched multijunction solar cells, these templates would enable increased flexibility in band gap selection for spectrum splitting ensembles and enhanced radiative quality relative to metamorphic growth. The III-V material family is commonly used for multijunction solar cells both for its high radiative quality and for the ease of integrating multiple band gaps into one monolithic growth. The band gap flexibility is limited by the lattice constant of available growth templates. The virtual substrate consists of a thin III-V film with the desired lattice constant. The film is grown strained on an available wafer substrate, but the thickness is below the dislocation nucleation threshold. By removing the film from the growth substrate, allowing the strain to relax elastically, and bonding it to a supportive handle, a template with the desired lattice constant is formed. Experimental efforts towards this structure and initial proof of concept are presented. Cells with high radiative quality present the opportunity to recover a large amount of their radiative losses if they are incorporated in an ensemble that couples emission from one cell to another. This effect is well known, but has been explored previously in the context of sub cells that independently operate at their maximum power point. This analysis explicitly accounts for the system interaction and identifies ways to enhance overall performance by operating some cells in an ensemble at voltages that reduce the power converted in the individual cell. Series connected multijunctions, which by their nature facilitate strong optical coupling between sub-cells, are reoptimized with substantial performance benefit. Photovoltaic efficiency is usually measured relative to a standard incident spectrum to allow comparison between systems. Deployed in the field systems may differ in energy production due to sensitivity to changes in the spectrum. The series connection constraint in particular causes system efficiency to decrease as the incident spectrum deviates from the standard spectral composition. This thesis performs a case study comparing performance of systems over a year at a particular location to identify the energy production penalty caused by series connection relative to independent electrical connection.

The Role of Metal Halide Perovskites in Next-Generation Lighting Devices.

PubMed

Lozano, Gabriel

2018-06-28

The development of smart illumination sources represents a central challenge of the current technology. In this context, the quest for novel materials that enable efficient light generation is essential. Metal halide compounds with perovskite crystalline structure (ABX3) have gained tremendous interest in the last five years since they come as easy-to-prepare high performance semiconductors. Perovskite absorbers are driving the power-conversion-efficiencies of thin film photovoltaics to unprecedented values. Nowadays, mixed-cation mixed-halide lead perovskite solar cells reach efficiencies consistently over 20% and promise to get close to 30% in multi-junction devices when combined with silicon cells at no surcharge. Nonetheless, perovskites' fame extends further since extensive research on these novel semiconductors has also revealed their brightest side. Soon after their irruption in the photovoltaic scenario, demonstration of efficient color tunable -with high color purity- perovskite emitters has opened new avenues for light generation applications that are timely to discuss herein.

Adhesion of Antireflective Coatings in Multijunction Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brock, Ryan; Miller, David C.; Dauskardt, Reinhold H.

2016-11-21

The development of a new composite dual cantilever beam (cDCB) thin-film adhesion testing method is reported, which allows the measurement of adhesion on the fragile thin substrates used in multijunction photovoltaics. We address the adhesion of several antireflective coating systems on multijunction cells. By varying interface chemistry and morphology, we demonstrate the ensuing effects on adhesion and help to develop an understanding of how high adhesion can be achieved, as adhesion values ranging from 0.5 J/m2 to 10 J/m2 were measured. Damp Heat (85 degrees C/85% RH) was used to invoke degradation of interfacial adhesion. We show that even withmore » germanium substrates that fracture easily, quantitative measurements of adhesion can still be made at high test yield. The cDCB test is discussed as an important new methodology, which can be broadly applied to any system that makes use of thin, brittle, or otherwise fragile substrates.« less

Adhesion of Antireflective Coatings in Multijunction Photovoltaics: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brock, Ryan; Dauskardt, Reinhold H.; Miller, David C.

2016-06-16

The development of a new composite dual cantilever beam (cDCB) thin-film adhesion testing method is reported, which allows the measurement of adhesion on the fragile thin substrates used in multijunction photovoltaics. We address the adhesion of several antireflective coating systems on multijunction cells. By varying interface chemistry and morphology, we demonstrate the ensuing effects on adhesion and help to develop an understanding of how high adhesion can be achieved, as adhesion values ranging from 0.5 J/m2 to 10 J/m2 were measured. Damp Heat (85 degrees C/85% RH) was used to invoke degradation of interfacial adhesion. We show that even withmore » germanium substrates that fracture easily, quantitative measurements of adhesion can still be made at high test yield. The cDCB test is discussed as an important new methodology, which can be broadly applied to any system that makes use of thin, brittle, or otherwise fragile substrates.« less

Energy production advantage of independent subcell connection for multijunction photovoltaics

DOE PAGES

Warmann, Emily C.; Atwater, Harry A.

2016-07-07

Increasing the number of subcells in a multijunction or "spectrum splitting" photovoltaic improves efficiency under the standard AM1.5D design spectrum, but it can lower efficiency under spectra that differ from the standard if the subcells are connected electrically in series. Using atmospheric data and the SMARTS multiple scattering and absorption model, we simulated sunny day spectra over 1 year for five locations in the United States and determined the annual energy production of spectrum splitting ensembles with 2-20 subcells connected electrically in series or independently. While electrically independent subcells have a small efficiency advantage over series-connected ensembles under the AM1.5Dmore » design spectrum, they have a pronounced energy production advantage under realistic spectra over 1 year. Simulated energy production increased with subcell number for the electrically independent ensembles, but it peaked at 8-10 subcells for those connected in series. As a result, electrically independent ensembles with 20 subcells produce up to 27% more energy annually than the series-connected 20-subcell ensemble. This energy production advantage persists when clouds are accounted for.« less

Energy production advantage of independent subcell connection for multijunction photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warmann, Emily C.; Atwater, Harry A.

Increasing the number of subcells in a multijunction or "spectrum splitting" photovoltaic improves efficiency under the standard AM1.5D design spectrum, but it can lower efficiency under spectra that differ from the standard if the subcells are connected electrically in series. Using atmospheric data and the SMARTS multiple scattering and absorption model, we simulated sunny day spectra over 1 year for five locations in the United States and determined the annual energy production of spectrum splitting ensembles with 2-20 subcells connected electrically in series or independently. While electrically independent subcells have a small efficiency advantage over series-connected ensembles under the AM1.5Dmore » design spectrum, they have a pronounced energy production advantage under realistic spectra over 1 year. Simulated energy production increased with subcell number for the electrically independent ensembles, but it peaked at 8-10 subcells for those connected in series. As a result, electrically independent ensembles with 20 subcells produce up to 27% more energy annually than the series-connected 20-subcell ensemble. This energy production advantage persists when clouds are accounted for.« less

Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion.

PubMed

Martí, A; Luque, A

2015-04-22

Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base-emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions.

Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion

PubMed Central

Martí, A.; Luque, A.

2015-01-01

Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base–emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions. PMID:25902374

Development of metal matrix composite gridlines for space photovoltaics

NASA Astrophysics Data System (ADS)

Abudayyeh, Omar Kamal

Space vehicles today are primarily powered by multi-junction photovoltaic cells due to their high efficiency and high radiation hardness in the space environment. While multi-junction solar cells provide high efficiency, microcracks develop in the crystalline semiconductor due to a variety of reasons, including: growth defects, film stress due to lattice constant mismatch, and external mechanical stresses introduced during shipping, installation, and operation. These microcracks have the tendency to propagate through the different layers of the semiconductor reaching the metal gridlines of the cell, resulting in electrically isolated areas from the busbar region, ultimately lowering the power output of the cell and potentially reducing the lifetime of the space mission. Pre-launch inspection are often expensive and difficult to perform, in which individual cells and entire modules must be replaced. In many cases, such microcracks are difficult to examine even with a thorough inspection. While repairs are possible pre-launch of the space vehicle, and even to some extent in low-to-earth missions, they are virtually impossible for deep space missions, therefore, efforts to mitigate the effects of these microcracks have substantial impact on the cell performance and overall success of the space mission. In this effort, we have investigated the use of multi-walled carbon nanotubes as mechanical reinforcement to the metal gridlines capable of bridging gaps generated in the underlying semiconductor while providing a redundant electrical conduction pathway. The carbon nanotubes are embedded in a silver matrix to create a metal matrix composite, which are later integrated onto commercial triple-junction solar cells.

Wire Array Photovoltaics

NASA Astrophysics Data System (ADS)

Turner-Evans, Dan

Over the past five years, the cost of solar panels has dropped drastically and, in concert, the number of installed modules has risen exponentially. However, solar electricity is still more than twice as expensive as electricity from a natural gas plant. Fortunately, wire array solar cells have emerged as a promising technology for further lowering the cost of solar. Si wire array solar cells are formed with a unique, low cost growth method and use 100 times less material than conventional Si cells. The wires can be embedded in a transparent, flexible polymer to create a free-standing array that can be rolled up for easy installation in a variety of form factors. Furthermore, by incorporating multijunctions into the wire morphology, higher efficiencies can be achieved while taking advantage of the unique defect relaxation pathways afforded by the 3D wire geometry. The work in this thesis shepherded Si wires from undoped arrays to flexible, functional large area devices and laid the groundwork for multijunction wire array cells. Fabrication techniques were developed to turn intrinsic Si wires into full p-n junctions and the wires were passivated with a-Si:H and a-SiNx:H. Single wire devices yielded open circuit voltages of 600 mV and efficiencies of 9%. The arrays were then embedded in a polymer and contacted with a transparent, flexible, Ni nanoparticle and Ag nanowire top contact. The contact connected >99% of the wires in parallel and yielded flexible, substrate free solar cells featuring hundreds of thousands of wires. Building on the success of the Si wire arrays, GaP was epitaxially grown on the material to create heterostructures for photoelectrochemistry. These cells were limited by low absorption in the GaP due to its indirect bandgap, and poor current collection due to a diffusion length of only 80 nm. However, GaAsP on SiGe offers a superior combination of materials, and wire architectures based on these semiconductors were investigated for multijunction arrays. These devices offer potential efficiencies of 34%, as demonstrated through an analytical model and optoelectronic simulations. SiGe and Ge wires were fabricated via chemical-vapor deposition and reactive ion etching. GaAs was then grown on these substrates at the National Renewable Energy Lab and yielded ns lifetime components, as required for achieving high efficiency devices.

Multijunction high voltage concentrator solar cells

NASA Technical Reports Server (NTRS)

Valco, G. J.; Kapoor, V. J.; Evans, J. C.; Chai, A.-T.

1981-01-01

The standard integrated circuit technology has been developed to design and fabricate new innovative planar multi-junction solar cell chips for concentrated sunlight applications. This 1 cm x 1 cm cell consisted of several voltage generating regions called unit cells which were internally connected in series within a single chip resulting in high open circuit voltages. Typical open-circuit voltages of 3.6 V and short-circuit currents of 90 ma were obtained at 80 AM1 suns. A dramatic increase in both short circuit current and open circuit voltage with increased light levels was observed.

The planar multijunction cell - A new solar cell for earth and space

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr.; Chai, A.-T.; Goradia, C.

1980-01-01

A new family of high-voltage solar cells, called the planar multijunction (PMJ) cell is being developed. The new cells combine the attractive features of planar cells with conventional or interdigitated back contacts and the vertical multijunction (VMJ) solar cell. The PMJ solar cell is internally divided into many voltage-generating regions, called unit cells, which are internally connected in series. The key to obtaining reasonable performance from this device was the separation of top surface field regions over each active unit cell area. Using existing solar cell fabricating methods, output voltages in excess of 20 volts per linear centimeter are possible. Analysis of the new device is complex, and numerous geometries are being studied which should provide substantial benefits in both normal sunlight usage as well as with concentrators.

Dual-junction GaAs solar cells and their application to smart stacked III–V//Si multijunction solar cells

NASA Astrophysics Data System (ADS)

Sugaya, Takeyoshi; Tayagaki, Takeshi; Aihara, Taketo; Makita, Kikuo; Oshima, Ryuji; Mizuno, Hidenori; Nagato, Yuki; Nakamoto, Takashi; Okano, Yoshinobu

2018-05-01

We report high-quality dual-junction GaAs solar cells grown using solid-source molecular beam epitaxy and their application to smart stacked III–V//Si quadruple-junction solar cells with a two-terminal configuration for the first time. A high open-circuit voltage of 2.94 eV was obtained in an InGaP/GaAs/GaAs triple-junction top cell that was stacked to a Si bottom cell. The short-circuit current density of a smart stacked InGaP/GaAs/GaAs//Si solar cell was in good agreement with that estimated from external quantum efficiency measurements. An efficiency of 18.5% with a high open-circuit voltage of 3.3 V was obtained in InGaP/GaAs/GaAs//Si two-terminal solar cells.

P/N In(Al) GaAs multijunction laser power converters

NASA Technical Reports Server (NTRS)

Wojtczuk, Steven; Parados, Themis; Walker, Gilbert

1994-01-01

Eight In(AI)GaAs PN junctions grown epitaxially on the semi-insulating wafer were monolithically integrated in series to boost the approximately 0.4V photovoltage per typical In(Al)GaAs junction to over 3 volts for the 1 sq cm laser power converted (LPC) chip. Advantages of multijunction LCP designs include the need for less circuitry for power reconditioning and the potential for lower I(sup 2)R power loss. As an example, these LPC's have a responsivity of approximately 1 amp/watt. With a single junction LPC, 100 watts/sq cm incident power would lead to about 100 A/sq cm short-circuit current at approximately 0.4V open-cicuit voltage. One disadvantage is the large current would lead to a large I(sup 2)R loss which would lower the fill factor so that 40 watts/sq cm output would not be obtained. Another is that few circuits are designed to work at 0.4 volts, so DC-DC power conversion circuitry would be necessary to raise the voltage to a reasonable level. The multijunction LPC being developed in this program is a step toward solving these problems. In the above example, an eight-junction LPC would have eight times the voltage, approximately 3V, so that DC-DC power conversion may not be needed in many instances. In addition, the multijunction LPC would have 1/8 the current of a single-junction LPC, for only 1/64 the I(sup 2)R loss if the series resistance is the same. Working monolithic multijunction laser power converters (LPC's) were made in two different compositions of the In(x)Al(y)Ga(1-x-y)As semiconductor alloy, In(0.53)Ga(0.47)As (0.74 eV) and In(0.5)Al(0.1)Ga(0.4)As (0.87 eV). The final 0.8 sq cm LPC's had output voltages of about 3 volts and output currents up to about one-half amp. Maximum 1.3 micron power conversion efficiencies were approximately 22 percent. One key advantage of multijunction LPC's is that they have higher output voltages, so that less DC-DC power conversion circuitry is needed in applications.

Quantitative adhesion characterization of antireflective coatings in multijunction photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brock, Ryan; Rewari, Raunaq; Novoa, Fernando D.

We discuss the development of a new composite dual cantilever beam (cDCB) thin-film adhesion testing method, which enables the quantitative measurement of adhesion on the thin and fragile substrates used in multijunction photovoltaics. In particular, we address the adhesion of several 2- and 3-layer antireflective coating systems on multijunction cells. By varying interface chemistry and morphology through processing, we demonstrate the marked effects on adhesion and help to develop an understanding of how high adhesion can be achieved, as adhesion values ranging from 0.5 J/m2 to 10 J/m2 were measured. Damp heat (85 degrees C/85% RH) was used to invokemore » degradation of interfacial adhesion. We demonstrate that even with germanium substrates that fracture relatively easily, quantitative measurements of adhesion can be made at high test yield. The cDCB test is discussed as an important new methodology, which can be broadly applied to any system that makes use of thin, brittle, or otherwise fragile substrates.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vaisman, Michelle; Fan, Shizhao; Nay Yaung, Kevin

As single-junction Si solar cells approach their practical efficiency limits, a new pathway is necessary to increase efficiency in order to realize more cost-effective photovoltaics. Integrating III-V cells onto Si in a multijunction architecture is a promising approach that can achieve high efficiency while leveraging the infrastructure already in place for Si and III-V technology. In this Letter, we demonstrate a record 15.3%-efficient 1.7 eV GaAsP top cell on GaP/Si, enabled by recent advances in material quality in conjunction with an improved device design and a high-performance antireflection coating. Furthermore, we present a separate Si bottom cell with a 1.7more » eV GaAsP optical filter to absorb most of the visible light with an efficiency of 6.3%, showing the feasibility of monolithic III-V/Si tandems with >20% efficiency. Through spectral efficiency analysis, we also compare our results to previously published GaAsP and Si devices, projecting tandem GaAsP/Si efficiencies of up to 25.6% based on current state-of-the-art individual subcells. With the aid of modeling, we further illustrate a realistic path toward 30% GaAsP/Si tandems for high-efficiency, monolithically integrated photovoltaics.« less

Highly doped layer for tunnel junctions in solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fetzer, Christopher M.

A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

Research Fellows | NREL

Science.gov Websites

years and has contributed greatly to world-record efficiencies in various photovoltaic technologies is a world-renowned expert in the fields of multijunction PV, concentrator PV, and PV reliability Publications Photo of Mark O'Malley Mark O'Malley SENIOR RESEARCH FELLOW Mark O'Malley is a world authority on

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paquette, B.; DeVita, M.; Turala, A.

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4⋅10{sup 20} cm{sup −3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

Low Intensity Low Temperature (LILT) measurements and coefficients on new photovoltaic structures

NASA Technical Reports Server (NTRS)

Schelman, David A.; Jenkins, Philip P.; Brinker, David J.; Appelbaum, Joseph

1995-01-01

Past NASA missions to Mars, Jupiter, and the outer planets were powered by radioisotope thermal generators (RTG's). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaic (PV) and thermophotovoltaic (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV and TPV data base for planetary mission planners and cell designers, we have compiled low temperature low intensity (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate dI(sub SC)/dT, dV(sub OC)/dT, dFF/dT, and also as a function of intensity, an accurate prediction of cell performance under the AMO spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GainP/GaAs/Ge, InP, InGaAs/InP, InP/InGaAs/InP, and GainP. Temperatures range as low as -175 C and intensities range from 1 sun to .02 suns.

Low Intensity Low Temperature (LILT) Measurements and Coefficients on New Photovoltaic Structures

NASA Technical Reports Server (NTRS)

Scheiman, David A.; Jenkins, Phillip P.; Brinker, David J.; Appelbaum, Joseph

1995-01-01

Past NASA missions to Mars, Jupiter and the outer planets were powered by radioisotope thermal generators (RTGs). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaics (PV) and thermophotovoltaics (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV data base for planetary mission planners and cell designers, we have compiled low intensity low temperature (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate Short Circuit Current (I(sub sc)), Open Circuit Voltage (V(sub os)), and Fill Factor (FF) as a function of temperature and intensity, an accurate prediction of cell performance under the AM0 spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GaInP/GaAs/GaAs, InP, InGaAs/InP, InP/InGaAs/InP, and GaInP. Temperatures range down to as low as -180 C and intensities range from 1 sun down to 0.02 suns. The coefficients presented in this paper represent experimental results and are intended to provide the user with approximate numbers.

High efficiency solar cells combining a perovskite and a silicon heterojunction solar cells via an optical splitting system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Uzu, Hisashi, E-mail: Hisashi.Uzu@kaneka.co.jp, E-mail: npark@skku.edu; Ichikawa, Mitsuru; Hino, Masashi

2015-01-05

We have applied an optical splitting system in order to achieve very high conversion efficiency for a full spectrum multi-junction solar cell. This system consists of multiple solar cells with different band gap optically coupled via an “optical splitter.” An optical splitter is a multi-layered beam splitter with very high reflection in the shorter-wave-length range and very high transmission in the longer-wave-length range. By splitting the incident solar spectrum and distributing it to each solar cell, the solar energy can be managed more efficiently. We have fabricated optical splitters and used them with a wide-gap amorphous silicon (a-Si) solar cellmore » or a CH{sub 3}NH{sub 3}PbI{sub 3} perovskite solar cell as top cells, combined with mono-crystalline silicon heterojunction (HJ) solar cells as bottom cells. We have achieved with a 550 nm cutoff splitter an active area conversion efficiency of over 25% using a-Si and HJ solar cells and 28% using perovskite and HJ solar cells.« less

Tandem luminescent solar concentrators based on engineered quantum dots

NASA Astrophysics Data System (ADS)

Wu, Kaifeng; Li, Hongbo; Klimov, Victor I.

2018-02-01

Luminescent solar concentrators (LSCs) can serve as large-area sunlight collectors for terrestrial and space-based photovoltaics. Due to their high emission efficiencies and readily tunable emission and absorption spectra, colloidal quantum dots have emerged as a new and promising type of LSC fluorophore. Spectral tunability of the quantum dots also facilitates the realization of stacked multilayered LSCs, where enhanced performance is obtained through spectral splitting of incident sunlight, as in multijunction photovoltaics. Here, we demonstrate a large-area (>230 cm2) tandem LSC based on two types of nearly reabsorption-free quantum dots spectrally tuned for optimal solar-spectrum splitting. This prototype device exhibits a high optical quantum efficiency of 6.4% for sunlight illumination and solar-to-electrical power conversion efficiency of 3.1%. The efficiency gains due to the tandem architecture over single-layer devices quickly increase with increasing LSC size and can reach more than 100% in structures with window sizes of more than 2,500 cm2.

AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

NASA Technical Reports Server (NTRS)

Dinetta, L. C.; Hannon, M. H.; Cummings, J. R.; Mcneeley, J. B.; Barnett, Allen M.

1990-01-01

Free-standing, transparent, tunable bandgap AlxGa1-xAs top solar cells have been fabricated for mechanical attachment in a four terminal tandem stack solar cell. Evaluation of the device results has demonstrated 1.80 eV top solar cells with efficiencies of 18 percent (100 X, and AM0) which would yield stack efficiencies of 31 percent (100 X, AM0) with a silicon bottom cell. When fully developed, the AlxGa1-xAs/Si mechanically-stacked two-junction solar cell concentrator system can provide efficiencies of 36 percent (AM0, 100 X). AlxGa1-xAs top solar cells with bandgaps from 1.66 eV to 2.08 eV have been fabricated. Liquid phase epitaxy (LPE) growth techniques have been used and LPE has been found to yield superior AlxGa1-xAs material when compared to molecular beam epitaxy and metal-organic chemical vapor deposition. It is projected that stack assembly technology will be readily applicable to any mechanically stacked multijunction (MSMJ) system. Development of a wide bandgap top solar cell is the only feasible method for obtaining stack efficiencies greater than 40 percent at AM0. System efficiencies of greater than 40 percent can be realized when the AlGaAs top solar cell is used in a three solar cell mechanical stack.

GaAs nanowire array solar cells with axial p-i-n junctions.

PubMed

Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

2014-06-11

Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

Exceptionally omnidirectional broadband light harvesting scheme for multi-junction concentrator solar cells achieved via ZnO nanoneedles

NASA Astrophysics Data System (ADS)

Yeh, Li-Ko; Tian, Wei-Cheng; Lai, Kun-Yu; He-Hau, Jr.

2016-12-01

GaInP/GaAs/Ge triple-junction concentrator solar cells with significant efficiency enhancement were demonstrated with antireflective ZnO nanoneedles. The novel nanostructure was attained with a Zn(NO3)2-based solution containing vitamin C. Under one sun AM 1.5G solar spectrum, conversion efficiency of the triple-junction device was improved by 23.7% via broadband improvement in short-circuit currents of 3 sub-cells after the coverage by the nanoneedles with a graded refractive index profile. The efficiency enhancement further went up to 45.8% at 100 suns. The performance boost through the nanoneedles also became increasingly pronounced in the conditions of high incident angles and the cloudy weather, e.g. 220.0% of efficiency enhancement was observed at the incident angle of 60°. These results were attributed to the exceptional broadband omnidirectionality of the antireflective nanoneedles.

Anomalous electron transport in metal/carbon multijunction devices by engineering of the carbon thickness and selecting metal layer

NASA Astrophysics Data System (ADS)

Dwivedi, Neeraj; Dhand, Chetna; Rawal, Ishpal; Kumar, Sushil; Malik, Hitendra K.; Lakshminarayanan, Rajamani

2017-06-01

A longstanding concern in the research of amorphous carbon films is their poor electrical conductivity at room temperature which constitutes a major barrier for the development of cost effective electronic and optoelectronic devices. Here, we propose metal/carbon hybrid multijunction devices as a promising facile way to overcome room temperature electron transport issues in amorphous carbon films. By the tuning of carbon thickness and swapping metal layers, we observe giant (upto ˜7 orders) reduction of electrical resistance in metal/carbon multijunction devices with respect to monolithic amorphous carbon device. We engineer the maximum current (electrical resistance) from about 10-7 to 10-3 A (˜107 to 103 Ω) in metal (Cu or Ti)/carbon hybrid multijunction devices with a total number of 10 junctions. The introduction of thin metal layers breaks the continuity of relatively higher resistance carbon layer as well as promotes the nanostructuring of carbon. These contribute to low electrical resistance of metal/carbon hybrid multijunction devices, with respect to monolithic carbon device, which is further reduced by decreasing the thickness of carbon layers. We also propose and discuss equivalent circuit model to explain electrical resistance in monolithic carbon and metal/carbon multijunction devices. Cu/carbon multijunction devices display relatively better electrical transport than Ti/carbon devices owing to low affinity of Cu with carbon that restricts carbide formation. We also observe that in metal/carbon multijunction devices, the transport mechanism changes from Poole-Frenkel/Schottky model to the hopping model with a decrease in carbon thickness. Our approach opens a new route to develop carbon-based inexpensive electronic and optoelectronic devices.

Multijunction solar cell design revisited: disruption of current matching by atmospheric absorption bands: Disruption of current matching by atmospheric absorption bands

DOE PAGES

McMahon, William E.; Friedman, Daniel J.; Geisz, John F.

2017-05-23

This paper re-examines the impact of atmospheric absorption bands on series-connected multijunction cell design, motivated by the numerous local efficiency maxima that appear as the number of junctions is increased. Some of the local maxima are related to the bottom subcell bandgap and are already well understood: As the bottom subcell bandgap is varied, a local efficiency maximum is produced wherever the bottom cell bandgap crosses an atmospheric absorption band. The optimal cell designs at these local maxima are generally current matched, such that all subcells have nearly the same short-circuit current. We systematically describe additional local maxima that occurmore » wherever an upper subcell bandgap encounters an atmospheric absorption band. Moreover, these local maxima are not current matched and become more prevalent as the number of junctions increases, complicating the solution space for five-junction and six-junction designs. A systematic framework for describing this complexity is developed, and implications for numerical convergence are discussed.« less

Multijunction solar cell design revisited: disruption of current matching by atmospheric absorption bands: Disruption of current matching by atmospheric absorption bands

DOE Office of Scientific and Technical Information (OSTI.GOV)

McMahon, William E.; Friedman, Daniel J.; Geisz, John F.

This paper re-examines the impact of atmospheric absorption bands on series-connected multijunction cell design, motivated by the numerous local efficiency maxima that appear as the number of junctions is increased. Some of the local maxima are related to the bottom subcell bandgap and are already well understood: As the bottom subcell bandgap is varied, a local efficiency maximum is produced wherever the bottom cell bandgap crosses an atmospheric absorption band. The optimal cell designs at these local maxima are generally current matched, such that all subcells have nearly the same short-circuit current. We systematically describe additional local maxima that occurmore » wherever an upper subcell bandgap encounters an atmospheric absorption band. Moreover, these local maxima are not current matched and become more prevalent as the number of junctions increases, complicating the solution space for five-junction and six-junction designs. A systematic framework for describing this complexity is developed, and implications for numerical convergence are discussed.« less

15.3%-Efficient GaAsP Solar Cells on GaP/Si Templates

DOE PAGES

Vaisman, Michelle; Fan, Shizhao; Nay Yaung, Kevin; ...

2017-07-26

As single-junction Si solar cells approach their practical efficiency limits, a new pathway is necessary to increase efficiency in order to realize more cost-effective photovoltaics. Integrating III-V cells onto Si in a multijunction architecture is a promising approach that can achieve high efficiency while leveraging the infrastructure already in place for Si and III-V technology. In this Letter, we demonstrate a record 15.3%-efficient 1.7 eV GaAsP top cell on GaP/Si, enabled by recent advances in material quality in conjunction with an improved device design and a high-performance antireflection coating. Furthermore, we present a separate Si bottom cell with a 1.7more » eV GaAsP optical filter to absorb most of the visible light with an efficiency of 6.3%, showing the feasibility of monolithic III-V/Si tandems with >20% efficiency. Through spectral efficiency analysis, we also compare our results to previously published GaAsP and Si devices, projecting tandem GaAsP/Si efficiencies of up to 25.6% based on current state-of-the-art individual subcells. With the aid of modeling, we further illustrate a realistic path toward 30% GaAsP/Si tandems for high-efficiency, monolithically integrated photovoltaics.« less

Experimental characterization and self-consistent modeling of luminescence coupling effect in III-V multijunction solar cells

NASA Astrophysics Data System (ADS)

Sogabe, Tomah; Ogura, Akio; Hung, Chao-Yu; Evstropov, Valery; Mintairov, Mikhail; Shvarts, Maxim; Okada, Yoshitaka

2013-12-01

In this paper, we focused on developing an accurate model to describe the luminescent coupling (L-C) effect in multijunction solar cells (MJSC) under light concentration. We present here a transcend current-voltage (I-V) formula combined with a self-consistent simulation algorithm to derive the coupling yield γ dependence on light intensity by including the electrical parameters such as shunt resistance (Rsh) and series resistance (Rs), which were ignored in previous simulation models. The effects of both Rsh and Rs on γ were revealed, and the dependence of γ on the external voltage bias Vbias was investigated. Meanwhile, we have performed experiments to determine coupling yield γ by measuring the I-V curves of individual subcell of InGaP/GaAs/Ge triple junction solar cell under varied light intensity. We found that the measured results are only in good agreement with the simulated data obtained from the model where the resistance parameters were included. Based on these results, we calculated the conversion efficiency of MJSC and found that the efficiency increase due to L-C effect is 0.31% under 1 sun and 1.07% under 1000 suns. Thus the L-C analysis results presented here will work as an additional device optimization criteria for MJSC toward higher efficiency.

Component Cell-Based Restriction of Spectral Conditions and the Impact on CPV Module Power Rating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muller, Matthew T; Steiner, Marc; Siefer, Gerald

One approach to consider the prevailing spectral conditions when performing CPV module power ratings according to the standard IEC 62670-3 is based on spectral matching ratios (SMRs) determined by the means of component cell sensors. In this work, an uncertainty analysis of the SMR approach is performed based on a dataset of spectral irradiances created with SMARTS2. Using these illumination spectra, the respective efficiencies of multijunction solar cells with different cell architectures are calculated. These efficiencies were used to analyze the influence of different component cell sensors and SMR filtering methods. The 3 main findings of this work are asmore » follows. First, component cells based on the lattice-matched triple-junction (LM3J) cell are suitable for restricting spectral conditions and are qualified for the standardized power rating of CPV modules - even if the CPV module is using multijunction cells other than LM3J. Second, a filtering of all 3 SMRs with +/-3.0% of unity results in the worst case scenario in an underestimation of -1.7% and overestimation of +2.4% compared to AM1.5d efficiency. Third, there is no benefit in matching the component cells to the module cell in respect to the measurement uncertainty.« less

Multi-junction solar cell device

DOEpatents

Friedman, Daniel J.; Geisz, John F.

2007-12-18

A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom active cell (20) having a single-crystal silicon substrate base and an emitter layer (23). The multi-junction device (10) further comprises one or two subsequent active cells each having a base layer (32) and an emitter layer (23) with interconnecting tunnel junctions between each active cell. At least one layer that forms each of the top and middle active cells is composed of a single-crystal III-V semiconductor alloy that is substantially lattice-matched to the silicon substrate (22). The polarity of the active p-n junction cells is either p-on-n or n-on-p. The present invention further includes a method for substantially lattice matching single-crystal III-V semiconductor layers with the silicon substrate (22) by including boron and/or nitrogen in the chemical structure of these layers.

Synergetic electrode architecture for efficient graphene-based flexible organic light-emitting diodes

PubMed Central

Lee, Jaeho; Han, Tae-Hee; Park, Min-Ho; Jung, Dae Yool; Seo, Jeongmin; Seo, Hong-Kyu; Cho, Hyunsu; Kim, Eunhye; Chung, Jin; Choi, Sung-Yool; Kim, Taek-Soo; Lee, Tae-Woo; Yoo, Seunghyup

2016-01-01

Graphene-based organic light-emitting diodes (OLEDs) have recently emerged as a key element essential in next-generation displays and lighting, mainly due to their promise for highly flexible light sources. However, their efficiency has been, at best, similar to that of conventional, indium tin oxide-based counterparts. We here propose an ideal electrode structure based on a synergetic interplay of high-index TiO2 layers and low-index hole-injection layers sandwiching graphene electrodes, which results in an ideal situation where enhancement by cavity resonance is maximized yet loss to surface plasmon polariton is mitigated. The proposed approach leads to OLEDs exhibiting ultrahigh external quantum efficiency of 40.8 and 62.1% (64.7 and 103% with a half-ball lens) for single- and multi-junction devices, respectively. The OLEDs made on plastics with those electrodes are repeatedly bendable at a radius of 2.3 mm, partly due to the TiO2 layers withstanding flexural strain up to 4% via crack-deflection toughening. PMID:27250743

Synergetic electrode architecture for efficient graphene-based flexible organic light-emitting diodes.

PubMed

Lee, Jaeho; Han, Tae-Hee; Park, Min-Ho; Jung, Dae Yool; Seo, Jeongmin; Seo, Hong-Kyu; Cho, Hyunsu; Kim, Eunhye; Chung, Jin; Choi, Sung-Yool; Kim, Taek-Soo; Lee, Tae-Woo; Yoo, Seunghyup

2016-06-02

Graphene-based organic light-emitting diodes (OLEDs) have recently emerged as a key element essential in next-generation displays and lighting, mainly due to their promise for highly flexible light sources. However, their efficiency has been, at best, similar to that of conventional, indium tin oxide-based counterparts. We here propose an ideal electrode structure based on a synergetic interplay of high-index TiO2 layers and low-index hole-injection layers sandwiching graphene electrodes, which results in an ideal situation where enhancement by cavity resonance is maximized yet loss to surface plasmon polariton is mitigated. The proposed approach leads to OLEDs exhibiting ultrahigh external quantum efficiency of 40.8 and 62.1% (64.7 and 103% with a half-ball lens) for single- and multi-junction devices, respectively. The OLEDs made on plastics with those electrodes are repeatedly bendable at a radius of 2.3 mm, partly due to the TiO2 layers withstanding flexural strain up to 4% via crack-deflection toughening.

Investigations To Characterize Multi-Junction Solar Cells In The Stratosphere Using Low-Cost Balloon And Communication Technologies

NASA Technical Reports Server (NTRS)

Bowe, Glenroy A.; Wang, Qianghua; Woodyard, James R.; Johnston, Richard R.; Brown, William J.

2005-01-01

The use of current balloon, control and communication technologies to test multi-junction solar sell in the stratosphere to achieve near AMO conditions have been investigated. The design criteria for the technologies are that they be reliable, low cost and readily available. Progress is reported on a program to design, launch, fly and retrieve payloads dedicated to testing multi-junction solar cells.

The Growth of InGaAsN for High Efficiency Solar Cells by Metalorganic Chemical Vapor Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

ALLERMAN,ANDREW A.; BANKS,JAMES C.; GEE,JAMES M.

1999-09-16

InGaAsN alloys are a promising material for increasing the efficiency of multi-junction solar cells now used for satellite power systems. However, the growth of these dilute N containing alloys has been challenging with further improvements in material quality needed before the solar cell higher efficiencies are realized. Nitrogen/V ratios exceeding 0.981 resulted in lower N incorporation and poor surface morphologies. The growth rate was found to depend on not only the total group III transport for a fixed N/V ratio but also on the N/V ratio. Carbon tetrachloride and dimethylzinc were effective for p-type doping. Disilane was not an effectivemore » n-type dopant while SiCl4 did result in n-type material but only a narrow range of electron concentrations (2-5e17cm{sup -3}) were achieved.« less

III-V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

NASA Astrophysics Data System (ADS)

Cariou, Romain; Benick, Jan; Feldmann, Frank; Höhn, Oliver; Hauser, Hubert; Beutel, Paul; Razek, Nasser; Wimplinger, Markus; Bläsi, Benedikt; Lackner, David; Hermle, Martin; Siefer, Gerald; Glunz, Stefan W.; Bett, Andreas W.; Dimroth, Frank

2018-04-01

Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is possible to overcome this limit by combining silicon with high-bandgap materials, such as III-V semiconductors, in a multi-junction device. Significant challenges associated with this material combination have hindered the development of highly efficient III-V/Si solar cells. Here, we demonstrate a III-V/Si cell reaching similar performances to standard III-V/Ge triple-junction solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell. The key issues of III-V/Si interface recombination and silicon's weak absorption are addressed using poly-silicon/SiOx passivating contacts and a novel rear-side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a two-terminal GaInP/GaAs//Si solar cell reaching a 1-sun AM1.5G conversion efficiency of 33.3%.

Efficient full wave code for the coupling of large multirow multijunction LH grills

NASA Astrophysics Data System (ADS)

Preinhaelter, Josef; Hillairet, Julien; Milanesio, Daniele; Maggiora, Riccardo; Urban, Jakub; Vahala, Linda; Vahala, George

2017-11-01

The full wave code OLGA, for determining the coupling of a single row lower hybrid launcher (waveguide grills) to the plasma, is extended to handle multirow multijunction active passive structures (like the C3 and C4 launchers on TORE SUPRA) by implementing the scattering matrix formalism. The extended code is still computationally fast because of the use of (i) 2D splines of the plasma surface admittance in the accessibility region of the k-space, (ii) high order Gaussian quadrature rules for the integration of the coupling elements and (iii) utilizing the symmetries of the coupling elements in the multiperiodic structures. The extended OLGA code is benchmarked against the ALOHA-1D, ALOHA-2D and TOPLHA codes for the coupling of the C3 and C4 TORE SUPRA launchers for several plasma configurations derived from reflectometry and interferometery. Unlike nearly all codes (except the ALOHA-1D code), OLGA does not require large computational resources and can be used for everyday usage in planning experimental runs. In particular, it is shown that the OLGA code correctly handles the coupling of the C3 and C4 launchers over a very wide range of plasma densities in front of the grill.

Investigation of the Carbon Arc Source as an AM0 Solar Simulator for Use in Characterizing Multi-Junction Solar Cells

NASA Technical Reports Server (NTRS)

Xu, Jianzeng; Woodyward, James R.

2005-01-01

The operation of multi-junction solar cells used for production of space power is critically dependent on the spectral irradiance of the illuminating light source. Unlike single-junction cells where the spectral irradiance of the simulator and computational techniques may be used to optimized cell designs, optimization of multi-junction solar cell designs requires a solar simulator with a spectral irradiance that closely matches AM0.

Optimization of an Advanced Multi-Junction Solar-Cell Design for Space Environments (AM0) Using Nearly Orthogonal Latin Hypercubes

DTIC Science & Technology

2017-06-01

AN ADVANCED MULTI-JUNCTION SOLAR -CELL DESIGN FOR SPACE ENVIRONMENTS (AM0) USING NEARLY ORTHOGONAL LATIN HYPERCUBES by Silvio Pueschel June...ADVANCED MULTI-JUNCTION SOLAR -CELL DESIGN FOR SPACE ENVIRONMENTS (AM0) USING NEARLY ORTHOGONAL LATIN HYPERCUBES 5. FUNDING NUMBERS 6. AUTHOR(S) Silvio...multi-junction solar cells with Silvaco Atlas simulation software. It introduces the nearly orthogonal Latin hypercube (NOLH) design of experiments (DoE

Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

2001-01-01

A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

Cross-Sectional Transport Imaging in a Multijunction Solar Cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haegel, Nancy M.; Ke, Chi-Wen; Taha, Hesham

2015-06-14

Combining highly localized electron-beam excitation at a point with the spatial resolution capability of optical near-field imaging, we have imaged carrier transport in a cross-sectioned multijunction (GaInP/GaInAs/Ge) solar cell. We image energy transport associated with carrier diffusion throughout the full width of the middle (GaInAs) cell and luminescent coupling from point excitation in the top cell GaInP to the middle cell. Supporting cathodoluminescence and near-field photoluminescence measurements demonstrate excitation-dependent Fermi level splitting effects that influence cross-sectioned spectroscopy results as well as transport limitations on the spatial resolution of cross-sectional measurements.

Graphene-Enhanced Thermal Interface Materials for Thermal Management of Solar Cells

NASA Astrophysics Data System (ADS)

Saadah, Mohammed Ahmed

The interest to photovoltaic solar cells as a source of energy for a variety of applications has been rapidly increasing in recent years. Solar cells panels that employ optical concentrators can convert more than 30% of absorbed light into electricity. Most of the remaining 70% of absorbed energy is turned into heat inside the solar cell. The increase in the photovoltaic cell temperature negatively affects its power conversion efficiency and lifetime. In this dissertation research I investigated a feasibility of using graphene fillers in thermal interface materials for improving thermal management of multi-junction concentrator solar cells. Graphene and few-layer graphene fillers, produced by a scalable environmentally-friendly liquid-phase exfoliation technique, were incorporated into conventional thermal interface materials. Characteristics of the composites have been examined with Raman spectroscopy, optical microscopy and thermal conductivity measurements. Graphene-enhanced thermal interface materials have been applied between a solar cell and heat sink to improve heat dissipation. The performance of the single and multi-junction solar cells has been tested using an industry-standard solar simulator under the light concentration of up to 2000 suns. It was found that the application of graphene-enhanced thermal interface materials allows one to reduce the solar cell temperature and increase the open-circuit voltage. We demonstrated that the use of graphene helps in recovering significant amount of the power loss due to solar cell overheating. The obtained results are important for the development of new technologies for thermal management of concentrated and multi-junction photovoltaic solar cells.

The SCARLET{trademark} array for high power GEO satellites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spence, B.R.; Jones, P.A.; Eskenazi, M.I.

1997-12-31

The GEO satellite market is demanding increasingly capable spacecraft which, in turn, drives commercial spacecraft manufacturers to require significantly higher power solar arrays. As satellite capability increases the demand for high power array systems which are both cost and performance competitive becomes more crucial. Conventional rigid panel planar arrays, although suitable in the past, negatively impact spacecraft competitiveness for these new applications. The Solar Concentrator Array with Refractive Linear Element Technology (SCARLET{trademark}) represents an economically attractive solution for meeting these new high power requirements. When compared to conventional planar arrays, SCARLET provides substantially lower cost and higher deployed stiffness, competitivemore » mass, better producibility, and affordable use of high efficiency multijunction cells. This paper compares cost/performance characteristics of the SCARLET array to conventional planar arrays for high power GEO spacecraft applications. High power SCARLET array configurations are described, and inherent spacecraft and array level cost/performance benefits are presented.« less

Optimization of the silicon subcell for III-V on silicon multijunction solar cells: Key differences with conventional silicon technology

NASA Astrophysics Data System (ADS)

García-Tabarés, Elisa; Martín, Diego; García, Iván; Lelièvre, Jean François; Rey-Stolle, Ignacio

2012-10-01

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well-known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.

Optically enhanced photon recycling in mechanically stacked multijunction solar cells

DOE PAGES

Steiner, Myles A.; Geisz, John F.; Ward, J. Scott; ...

2015-11-09

Multijunction solar cells can be fabricated by mechanically bonding together component cells that are grown separately. Here, we present four-junction four-terminal mechanical stacks composed of GaInP/GaAs tandems grown on GaAs substrates and GaInAsP/GaInAs tandems grown on InP substrates. The component cells were bonded together with a low-index transparent epoxy that acts as an angularly selective reflector to the GaAs bandedge luminescence, while simultaneously transmitting nearly all of the subbandgap light. As determined by electroluminescence measurements and optical modeling, the GaAs subcell demonstrates a higher internal radiative limit and, thus, higher subcell voltage, compared with GaAs subcells without the epoxy reflector.more » The best cells demonstrate 38.8 ± 1.0% efficiency under the global spectrum at 1000 W/m 2 and ~ 42% under the direct spectrum at ~100 suns. As a result, eliminating the series resistance is the key challenge for further improving the concentrator cells.« less

Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates

NASA Astrophysics Data System (ADS)

Imajo, T.; Toko, K.; Takabe, R.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.

2018-01-01

Semiconductor strontium digermanide (SrGe2) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe2 dramatically changed depending on the growth temperature (300-700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe2 to high-efficiency thin-film solar cells.

Development of a 2.0 eV AlGaInP Solar Cell Grown by OMVPE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perl, Emmett E.; Simon, John; Geisz, John F.

2015-06-14

AlGaInP solar cells with a bandgap (Eg) of ~2.0 eV are developed for use in next-generation multijunction photovoltaic devices. This material system is of great interest for both space and concentrator photovoltaics due to its high bandgap, which enables the development of high-efficiency five-junction and six-junction devices and is also useful for solar cells operated at elevated temperatures. In this work, we explore the conditions for the Organometallic Vapor Phase Epitaxy (OMVPE) growth of AlGaInP and study their effects on cell performance. A ~2.0 eV AlGaInP solar cell is demonstrated with an open circuit voltage (VOC) of 1.59V, a bandgap-voltagemore » offset (WOC) of 420mV, a fill factor (FF) of 88.0%, and an efficiency of 14.8%. These AlGaInP cells have attained a similar FF, WOC and internal quantum efficiency (IQE) to the best upright GaInP cells grown in our lab to date.« less

Performance of High-Efficiency Advanced Triple-Junction Solar Panels for the LILT Mission Dawn

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.; Sharma, Surya; Buitrago, Oscar; Sharps, Paul R.; Blok, Ron; Kroon, Martin; Jalink, Cees; Harris, Robin; Stella, Paul; Distefano, Sal

2005-01-01

NASA's Discovery Mission Dawn is designed to (LILT) conditions. operate within the solar system's Asteroid belt, where the large distance from the sun creates a low-intensity, low-temperature (LILT) condition. To meet the mission power requirements under LlLT conditions, very high-efficiency multi-junction solar cells were selected to power the spacecraft to be built by Orbital Sciences Corporation (OSC) under contract with JPL. Emcore's InGaP/InGaAs/Ge advanced triple-junction (ATJ) solar cells, exhibiting an average air mass zero (AMO) efficiency of greater than 27.6% (one-sun, 28 C), were used to populate the solar panels [1]. The two solar array wings, to be built by Dutch Space, with 5 large- area panels each (total area of 36.4 sq. meters) are projected to produce between 10.3 kWe and 1.3 kWe of end-of life (EOL) power in the 1.0 to 3.0 AU range, respectively. The details of the solar panel design, testing and power analysis are presented.

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

DOE PAGES

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil; ...

2017-12-20

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solutionmore » to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.« less

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solutionmore » to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.« less

InGaAlAsPN: A Materials System for Silicon Based Optoelectronics and Heterostructure Device Technologies

NASA Technical Reports Server (NTRS)

Broekaert, T. P. E.; Tang, S.; Wallace, R. M.; Beam, E. A., III; Duncan, W. M.; Kao, Y. -C.; Liu, H. -Y.

1995-01-01

A new material system is proposed for silicon based opto-electronic and heterostructure devices; the silicon lattice matched compositions of the (In,Ga,Al)-(As,P)N 3-5 compounds. In this nitride alloy material system, the bandgap is expected to be direct at the silicon lattice matched compositions with a bandgap range most likely to be in the infrared to visible. At lattice constants ranging between those of silicon carbide and silicon, a wider bandgap range is expected to be available and the high quality material obtained through lattice matching could enable applications such as monolithic color displays, high efficiency multi-junction solar cells, opto-electronic integrated circuits for fiber communications, and the transfer of existing 3-5 technology to silicon.

Pressure and PL study of dilute-N GaInNAs films for applications in photovoltaics

NASA Astrophysics Data System (ADS)

Lindberg, George; Fukuda, Miwa; Al Khalfioui, M.; Hossain, Khalid; Sellers, Ian; Weinstein, Bernard

2013-03-01

Multi-junction photovoltaic devices employing dilute-N GaInNAs alloys are currently of high interest for efficient solar energy conversion. The negative band-bowing produced by introducing a few percent N into GaInAs provides a convenient way to match the 1eV component of the solar spectrum, providing recombination losses in localized states can be reduced while maintaining favorable carrier extraction. High pressure photoluminescence (PL) experiments exploring the localization of band-edge excitons in dilute-N GaInNAs films grown by plasma assisted MBE will be discussed. The effects of post-growth annealing and hydrogen incorporation on the PL spectra of the films are considered. Research supported by Amethyst Research Inc. through the State of Oklahoma, ONAP program.

Imaging Atomic-Scale Clustering in III–V Semiconductor Alloys

DOE PAGES

Hirst, Louise C.; Kotulak, Nicole A.; Tomasulo, Stephanie; ...

2017-03-13

Quaternary alloys are essential for the development of high-performance optoelectronic devices. However, immiscibility of the constituent elements can make these materials vulnerable to phase segregation, which degrades the optical and electrical properties of the solid. High-efficiency III–V photovoltaic cells are particularly sensitive to this degradation. InAlAsSb lattice matched to InP is a promising candidate material for high-bandgap subcells of a multijunction photovoltaic device. However, previous studies of this material have identified characteristic signatures of compositional variation, including anomalous low-energy photoluminescence. In this paper, atomic-scale clustering is observed in InAlAsSb via quantitative scanning transmission electron microscopy. Finally, image quantification of atomicmore » column intensity ratios enables the comparison with simulated images, confirming the presence of nonrandom compositional variation in this multispecies alloy.« less

Terrestrial photovoltaic collector technology trends

NASA Technical Reports Server (NTRS)

Shimada, K.; Costogue, E.

1984-01-01

Following the path of space PV collector development in its early stages, terrestrial PV technologies based upon single-crystal silicon have matured rapidly. Currently, terrestrial PV cells with efficiencies approaching space cell efficiencies are being fabricated into modules at a fraction of the space PV module cost. New materials, including CuInSe2 and amorphous silicon, are being developed for lowering the cost, and multijunction materials for achieving higher efficiency. Large grid-interactive, tracking flat-plate power systems and concentrator PV systems totaling about 10 MW, are already in operation. Collector technology development both flat-plate and concentrator, will continue under an extensive government and private industry partnership.

Cylindrically symmetric Fresnel lens for high concentration photovoltaic

NASA Astrophysics Data System (ADS)

Hung, Yu-Ting; Su, Guo-Dung

2009-08-01

High concentration photovoltaic (HCPV) utilizes point-focus cost-effective plastic Fresnel lens. And a millimeter-sized Ill-V compound multi-junction solar cell is placed underneath focusing optics which can achieve cell efficiency potential of up to 40.7 %. The advantage of HCPV makes less solar cell area and higher efficiency; however, the acceptance angle of HCPV is about +/-1°, which is very small and the mechanical tracking of the sun is necessary. In order to reduce the power consumption and the angle tracking error of tracking systems, a light collector model with larger acceptance angle is designed with ZEMAX®. In this model, the original radially symmetric Fresnel lens of HCPV is replaced by cylindrically symmetric Fresnel lens and a parabolic reflective surface. Light is collected in two dimensions separately. And a couple of lenses and a light pipe are added before the solar cell chip in order to collect more light when sun light deviates from incident angle of 00. An acceptance angle of +/-10° is achieved with GCR 400.

Enhanced mobility CsPbI3 quantum dot arrays for record-efficiency, high-voltage photovoltaic cells

PubMed Central

Sanehira, Erin M.; Marshall, Ashley R.; Christians, Jeffrey A.; Harvey, Steven P.; Ciesielski, Peter N.; Wheeler, Lance M.; Schulz, Philip; Lin, Lih Y.; Beard, Matthew C.; Luther, Joseph M.

2017-01-01

We developed lead halide perovskite quantum dot (QD) films with tuned surface chemistry based on A-site cation halide salt (AX) treatments. QD perovskites offer colloidal synthesis and processing using industrially friendly solvents, which decouples grain growth from film deposition, and at present produce larger open-circuit voltages (VOC’s) than thin-film perovskites. CsPbI3 QDs, with a tunable bandgap between 1.75 and 2.13 eV, are an ideal top cell candidate for all-perovskite multijunction solar cells because of their demonstrated small VOC deficit. We show that charge carrier mobility within perovskite QD films is dictated by the chemical conditions at the QD-QD junctions. The AX treatments provide a method for tuning the coupling between perovskite QDs, which is exploited for improved charge transport for fabricating high-quality QD films and devices. The AX treatments presented here double the film mobility, enabling increased photocurrent, and lead to a record certified QD solar cell efficiency of 13.43%. PMID:29098184

Producing Solar Cells By Surface Preparation For Accelerated Nucleation Of Microcrystalline Silicon On Heterogeneous Substrates.

DOEpatents

Yang, Liyou; Chen, Liangfan

1998-03-24

Attractive multi-junction solar cells and single junction solar cells with excellent conversion efficiency can be produced with a microcrystalline tunnel junction, microcrystalline recombination junction or one or more microcrystalline doped layers by special plasma deposition processes which includes plasma etching with only hydrogen or other specified etchants to enhance microcrystalline growth followed by microcrystalline. nucleation with a doped hydrogen-diluted feedstock.

Multi-junction Thin-film Solar Cells on Flexible Substrates for Space Power

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Smith, Mark; Scofield, John H.; Dickman, John E.; Lush, Gregory B.; Morel, Donald L.; Ferekides, Christos; Dhere, Neelkanth G.

2002-01-01

The ultimate objective of the thin-film program at NASA GRC is development of a 20 percent AM0 thin-film device technology with high power/weight ratio. Several approaches are outlined to improve overall device efficiency and power/weight ratio. One approach involves the use of very lightweight flexible substrates such as polyimides (i.e., Kapton(Trademark)) or metal foil. Also, a compound semiconductor tandem device structure that can meet this objective is proposed and simulated using Analysis of Microelectronic and Photonic Structures (AMPS). AMPS modeling of current devices in tandem format indicate that AM0 efficiencies near 20 percent can be achieved. And with improvements in materials, efficiencies approaching 25 percent are achievable. Several important technical issues need to be resolved to realize these complex devices: development of a wide bandgap material with good electronic properties, development of transparent contacts, and targeting a 2-terminal device structure (with more complicated processing and tunnel junction) or 4-terminal device. Recent progress in the NASA GRC program is outlined.

Device characterization for design optimization of 4 junction inverted metamorphic concentrator solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, John F.; France, Ryan M.; Steiner, Myles A.

Quantitative electroluminescence (EL) and luminescent coupling (LC) analysis, along with more conventional characterization techniques, are combined to completely characterize the subcell JV curves within a fourjunction (4J) inverted metamorphic solar cell (IMM). The 4J performance under arbitrary spectral conditions can be predicted from these subcell JV curves. The internal radiative efficiency (IRE) of each junction has been determined as a function of current density from the external radiative efficiency using optical modeling, but this required the accurate determination of the individual junction current densities during the EL measurement as affected by LC. These measurement and analysis techniques can be appliedmore » to any multijunction solar cell. The 4J IMM solar cell used to illustrate these techniques showed excellent junction quality as exhibited by high IRE and a one-sun AM1.5D efficiency of 36.3%. This device operates up to 1000 suns without limitations due to any of the three tunnel junctions.« less

Low-Cost Approaches to III–V Semiconductor Growth for Photovoltaic Applications

DOE PAGES

Greenaway, Ann L.; Boucher, Jason W.; Oener, Sebastian Z.; ...

2017-08-31

III–V semiconductors form the most efficient single- and multijunction photovoltaics. Metal–organic vapor-phase epitaxy, which uses toxic and pyrophoric gas-phase precursors, is the primary commercial growth method for these materials. In order for the use of highly efficient III–V-based devices to be expanded as the demand for renewable electricity grows, a lower-cost approach to the growth of these materials is needed. This Review focuses on three deposition techniques compatible with current device architectures: hydride vapor-phase epitaxy, close-spaced vapor transport, and thin-film vapor–liquid–solid growth. Here, we consider recent advances in each technique, including the available materials space, before providing an in-depth comparisonmore » of growth technology advantages and limitations and considering the impact of modifications to the method of production on the cost of the final photovoltaics.« less

Current matching using CdSe quantum dots to enhance the power conversion efficiency of InGaP/GaAs/Ge tandem solar cells.

PubMed

Lee, Ya-Ju; Yao, Yung-Chi; Tsai, Meng-Tsan; Liu, An-Fan; Yang, Min-De; Lai, Jiun-Tsuen

2013-11-04

A III-V multi-junction tandem solar cell is the most efficient photovoltaic structure that offers an extremely high power conversion efficiency. Current mismatching between each subcell of the device, however, is a significant challenge that causes the experimental value of the power conversion efficiency to deviate from the theoretical value. In this work, we explore a promising strategy using CdSe quantum dots (QDs) to enhance the photocurrent of the limited subcell to match with those of the other subcells and to enhance the power conversion efficiency of InGaP/GaAs/Ge tandem solar cells. The underlying mechanism of the enhancement can be attributed to the QD's unique capacity for photon conversion that tailors the incident spectrum of solar light; the enhanced efficiency of the device is therefore strongly dependent on the QD's dimensions. As a result, by appropriately selecting and spreading 7 mg/mL of CdSe QDs with diameters of 4.2 nm upon the InGaP/GaAs/Ge solar cell, the power conversion efficiency shows an enhancement of 10.39% compared to the cell's counterpart without integrating CdSe QDs.

Enhanced current collection in 1.7 eV GaInAsP solar cells grown on GaAs by metalorganic vapor phase epitaxy

DOE PAGES

Jain, Nikhil; Geisz, John F.; France, Ryan M.; ...

2017-02-08

Quaternary GaInAsP solar cells with a bandgap of ~1.7 eV offer an attractive Al-free alternative to AlGaAs solar cells for integration in next generation of III-V multijunction solar cells with five or more junctions. Development of a high quality 1.7 eV solar cell is also highly sought for III-V/Si tandem solar cells. In this work, we systematically investigate the impact of varying base thicknesses and doping concentrations on the carrier collection and performance of 1.7 eV GaInAsP solar cells. The photoresponse of these cells is found to be very sensitive to p-type zinc doping concentration in the base layer. Prototypemore » 1.7 eV GaInAsP n-i-p solar cell designs are demonstrated that leverage enhanced depletion width as an effective method to achieve peak quantum efficiency exceeding 90%. We also show the importance of optimal i-layer thickness as a critical parameter to reduce the drop in fill-factor (FF) due to field-aided collection. Furthermore, we demonstrate substantial improvement in the cell performance when the GaInAsP base layer is grown at 650 degrees C instead of 600 degrees C. The best GaInAsP solar cell (Eg ~ 1.65 eV) in this study achieved JSC of 21.1 mA/cm 2, VOC of 1.18 V, FF of 83.8%, and an efficiency of 20.8 +/- 1% under AM1.5D spectrum (21.5 +/- 1% under AM1.5G spectrum). Finally, these results highlight the potential of Al-free GaInAsP solar cells for integration in the next generation of III-V multijunction solar cells.« less

Enhanced current collection in 1.7 eV GaInAsP solar cells grown on GaAs by metalorganic vapor phase epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jain, Nikhil; Geisz, John F.; France, Ryan M.

Quaternary GaInAsP solar cells with a bandgap of ~1.7 eV offer an attractive Al-free alternative to AlGaAs solar cells for integration in next generation of III-V multijunction solar cells with five or more junctions. Development of a high quality 1.7 eV solar cell is also highly sought for III-V/Si tandem solar cells. In this work, we systematically investigate the impact of varying base thicknesses and doping concentrations on the carrier collection and performance of 1.7 eV GaInAsP solar cells. The photoresponse of these cells is found to be very sensitive to p-type zinc doping concentration in the base layer. Prototypemore » 1.7 eV GaInAsP n-i-p solar cell designs are demonstrated that leverage enhanced depletion width as an effective method to achieve peak quantum efficiency exceeding 90%. We also show the importance of optimal i-layer thickness as a critical parameter to reduce the drop in fill-factor (FF) due to field-aided collection. Furthermore, we demonstrate substantial improvement in the cell performance when the GaInAsP base layer is grown at 650 degrees C instead of 600 degrees C. The best GaInAsP solar cell (Eg ~ 1.65 eV) in this study achieved JSC of 21.1 mA/cm 2, VOC of 1.18 V, FF of 83.8%, and an efficiency of 20.8 +/- 1% under AM1.5D spectrum (21.5 +/- 1% under AM1.5G spectrum). Finally, these results highlight the potential of Al-free GaInAsP solar cells for integration in the next generation of III-V multijunction solar cells.« less

Ultrathin high band gap solar cells with improved efficiencies from the world's oldest photovoltaic material.

PubMed

Todorov, Teodor K; Singh, Saurabh; Bishop, Douglas M; Gunawan, Oki; Lee, Yun Seog; Gershon, Talia S; Brew, Kevin W; Antunez, Priscilla D; Haight, Richard

2017-09-25

Selenium was used in the first solid state solar cell in 1883 and gave early insights into the photoelectric effect that inspired Einstein's Nobel Prize work; however, the latest efficiency milestone of 5.0% was more than 30 years ago. The recent surge of interest towards high-band gap absorbers for tandem applications led us to reconsider this attractive 1.95 eV material. Here, we show completely redesigned selenium devices with improved back and front interfaces optimized through combinatorial studies and demonstrate record open-circuit voltage (V OC ) of 970 mV and efficiency of 6.5% under 1 Sun. In addition, Se devices are air-stable, non-toxic, and extremely simple to fabricate. The absorber layer is only 100 nm thick, and can be processed at 200 ˚C, allowing temperature compatibility with most bottom substrates or sub-cells. We analyze device limitations and find significant potential for further improvement making selenium an attractive high-band-gap absorber for multi-junction device applications.Wide band gap semiconductors are important for the development of tandem photovoltaics. By introducing buffer layers at the front and rear side of solar cells based on selenium; Todorov et al., reduce interface recombination losses to achieve photoconversion efficiencies of 6.5%.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jain, Nikhil; Oshima, Ryuji; France, Ryan

To advance the state-of-the-art in III-V multijunction solar cells towards high concentration efficiencies approaching 50%, development of a high-quality ~1.7 eV second junction solar cell is of key interest for integration in five or more junction devices. Quaternary GalnAsP solar cells grown lattice-matched on GaAs allows bandgap tunability in the range from 1.42 to 1.92 eV and offers an attractive Al-free alternative to conventional AlGaAs solar cells. In this work, we investigate the role of growth temperature towards understanding the optimal growth window for realizing high-quality GalnAsP alloys. We demonstrate bandgap tunability from 1.6 to 1.8 eV in GalnAsP alloysmore » for compositions close to the miscibility gap, while still maintaining lattice-matched condition to GaAs. We perform an in-depth investigation to understand the impact of varying base thickness and doping concentration on the carrier collection and performance of these 1.7 eV GalnAsP solar cells. The photo-response of these cells is found to be very sensitive to p-type zinc dopant incorporation in the base layer. We demonstrate prototype 1.7 eV GalnAsP solar cell designs that leverage enhanced depletion width as an effective method to overcome this issue and boost long-wavelength carrier collection. Short-circuit current density (JSC) measured in field-aided devices were as high as 17.25 m A/cm2. The best GalnAsP solar cell in this study achieved an efficiency of 17.2% with a JSC of 17 m A/cm2 and a fill-factor of 86.4%. The corresponding open-circuit voltage (VOC) 1.7 eV measured on this cell represents the highest Voc reported for a 1.7 eV GalnAsP solar cell. These initial cell results are encouraging and highlight the potential of Al-free GalnAsP solar cells for integration in the next generation of III-V multijunction solar cells.« less

An approach for configuring space photovoltaic tandem arrays based on cell layer performance

NASA Technical Reports Server (NTRS)

Flora, C. S.; Dillard, P. A.

1991-01-01

Meeting solar array performance goals of 300 W/Kg requires use of solar cells with orbital efficiencies greater than 20 percent. Only multijunction cells and cell layers operating in tandem produce this required efficiency. An approach for defining solar array design concepts that use tandem cell layers involve the following: transforming cell layer performance at standard test conditions to on-orbit performance; optimizing circuit configuration with tandem cell layers; evaluating circuit sensitivity to cell current mismatch; developing array electrical design around selected circuit; and predicting array orbital performance including seasonal variations.

Status of Photovoltaic Calibration and Measurement Standards

NASA Technical Reports Server (NTRS)

Baraona, Cosmo; Bailey, Sheila; Curtis, Henry; Brinker, David; Jenkins, Phillip; Scheiman, David

2001-01-01

The 7th International Workshop on Space Solar Cell Calibration and Measurement was held on September 25-27, 2000 in Girdwood, Alaska. Representatives from eight countries discussed international standards for single and multijunction solar cell measurement and calibration methods, round robin intercomparisons, and irradiation test methods for space solar cells. Progress toward adoption of an ISO standard on single junction cells was made. Agreement was reached to begin work on new standards for multijunction cells and irradiation testing. Progress on present single junction round robin measurements was discussed and future multijunction round robins were planned. The next workshop will be held in Germany in October 2001.

Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates.

PubMed

Imajo, T; Toko, K; Takabe, R; Saitoh, N; Yoshizawa, N; Suemasu, T

2018-01-16

Semiconductor strontium digermanide (SrGe 2 ) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe 2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe 2 dramatically changed depending on the growth temperature (300-700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe 2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe 2 to high-efficiency thin-film solar cells.

Electric Power System for High Altitude UAV Technology Survey

NASA Technical Reports Server (NTRS)

1997-01-01

Electric powertrain technologies with application to high altitude Unmanned Aerial Vehicles (UAV) are assessed. One hundred twenty five solar electric UAV configurations and missions were simulated. Synergistic design opportunities were investigated with the premise that specific benefits may be realized, for example, if a single component can serve multiple functions, such as a battery being used for energy storage as well as for a structural component of the aircraft. For each UAV mission simulation, the airframe structure, powertrain configuration (type of solar cells, energy storage options) and performance baseline (1997 or 2001) were specified. It has been found that the use of the high efficiency (multijunction) solar cells or the use of the synergistic amorphous silicon solar cell configuration yields aircraft that can accomplish the majority of the missions of interest for any latitude between 0 deg and 55 deg, hence, a single versatile aircraft can be constructed and implemented to accomplish these missions.

Effect of Atmospheric Absorption Bands on the Optimal Design of Multijunction Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

McMahon, William E.; Friedman, Daniel J.; Geisz, John F.

Designing terrestrial multijunction (MJ) cells with 5+ junctions is challenging, in part because the presence of atmospheric absorption bands creates a design space with numerous local maxima. Here we introduce a new taxonomical structure which facilitates both numerical convergence and the visualization of the resulting designs.

Si-Ge-Sn alloys with 1.0 eV gap for CPV multijunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roucka, Radek, E-mail: radek@translucentinc.com; Clark, Andrew; Landini, Barbara

2015-09-28

Si-Ge-Sn ternary group IV alloys offer an alternative to currently used 1.0 eV gap materials utilized in multijunction solar cells. The advantage of Si-Ge-Sn is the ability to vary both the bandgap and lattice parameter independently. We present current development in fabrication of Si-Ge-Sn alloys with gaps in the 1.0 eV range. Produced material exhibits excellent structural properties, which allow for integration with existing III-V photovoltaic cell concepts. Time dependent room temperature photoluminescence data demonstrate that these materials have long carrier lifetimes. Absorption tunable by compositional changes is observed. As a prototype device set utilizing the 1 eV Si-Ge-Sn junction,more » single junction Si-Ge-Sn device and triple junction device with Si-Ge-Sn subcell have been fabricated. The resulting I-V and external quantum efficiency data show that the Si-Ge-Sn junction is fully functional and the performance is comparable to other 1.0 eV gap materials currently used.« less

A three solar cell system based on a self-supporting, transparent AlGaAs top solar cell

NASA Technical Reports Server (NTRS)

Negley, Gerald H.; Rhoads, Sandra L.; Terranova, Nancy E.; Mcneely, James B.; Barnett, Allen M.

1989-01-01

Development of a three solar cell stack can lead to practical efficiencies greater than 30 percent (1x,AM0). A theoretical efficiency limitation of 43.7 percent at AM0 and one sun is predicted by this model. Including expected losses, a practical system efficiency of 36.8 percent is anticipated. These calculations are based on a 1.93eV/1.43eV/0.89eV energy band gap combination. AlGaAs/GaAs/GaInAsP materials can be used with a six-terminal wiring configuration. The key issues for multijunction solar cells are the top and middle solar cell performance and the sub-bandgap transparency. AstroPower has developed a technique to fabricate AlGaAs solar cells on rugged, self-supporting, transparent AlGaAs substrates. Top solar cell efficiencies greater than 11 percent AM0 have been achieved. State-of-the-art GaAs or InP devices will be used for the middle solar cell. GaInAsP will be used to fabricate the bottom solar cell. This material is lattice-matched to InP and offers a wide range of bandgaps for optimization of the three solar cell stack. Liquid phase epitaxy is being used to grow the quaternary material. Initial solar cells have shown open-circuit voltages of 462 mV for a bandgap of 0.92eV. Design rules for the multijunction three solar cell stack are discussed. The progress in the development of the self-supporting AlGaAs top solar cell and the GaInAsP bottom solar cell is presented.

Superstrate sub-cell voltage-matched multijunction solar cells

DOEpatents

Mascarenhas, Angelo; Alberi, Kirstin

2016-03-15

Voltage-matched thin film multijunction solar cell and methods of producing cells having upper CdTe pn junction layers formed on a transparent substrate which in the completed device is operatively positioned in a superstate configuration. The solar cell also includes a lower pn junction formed independently of the CdTe pn junction and an insulating layer between CdTe and lower pn junctions. The voltage-matched thin film multijunction solar cells further include a parallel connection between the CdTe pn junction and lower pn junctions to form a two-terminal photonic device. Methods of fabricating devices from independently produced upper CdTe junction layers and lower junction layers are also disclosed.

Hydrogenated TiO2 Thin Film for Accelerating Electron Transport in Highly Efficient Planar Perovskite Solar Cells.

PubMed

Yao, Xin; Liang, Junhui; Li, Yuelong; Luo, Jingshan; Shi, Biao; Wei, Changchun; Zhang, Dekun; Li, Baozhang; Ding, Yi; Zhao, Ying; Zhang, Xiaodan

2017-10-01

Intensive studies on low-temperature deposited electron transport materials have been performed to improve the efficiency of n-i-p type planar perovskite solar cells to extend their application on plastic and multijunction device architectures. Here, a TiO 2 film with enhanced conductivity and tailored band edge is prepared by magnetron sputtering at room temperature by hydrogen doping (HTO), which accelerates the electron extraction from perovskite photoabsorber and reduces charge transfer resistance, resulting in an improved short circuit current density and fill factor. The HTO film with upward shifted Fermi level guarantees a smaller loss on V OC and facilitates the growth of high-quality absorber with much larger grains and more uniform size, leading to devices with negligible hysteresis. In comparison with the pristine TiO 2 prepared without hydrogen doping, the HTO-based device exhibits a substantial performance enhancement leading to an efficiency of 19.30% and more stabilized photovoltaic performance maintaining 93% of its initial value after 300 min continuous illumination in the glove box. These properties permit the room-temperature magnetron sputtered HTO film as a promising electron transport material for flexible and tandem perovskite solar cell in the future.

Combined heat and power generation with a HCPV system at 2000 suns

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paredes, Filippo; Montagnino, Fabio M.; Milone, Sergio

2015-09-28

This work shows the development of an innovative solar CHP system for the combined production of heat and power based upon HCPV modules working at the high concentration level of 2000 suns. The solar radiation is concentrated on commercial InGaP/InGaAs/Ge triple-junction solar cells designed for intensive work. The primary optics is a rectangular off-axis parabolic mirror while a secondary optic at the focus of the parabolic mirror is glued in optical contact with the cell. Each module consist of 2 axis tracker (Alt-Alt type) with 20 multijunction cells each one integrated with an active heat sink. The cell is connectedmore » to an active heat transfer system that allows to keep the cell at a high level of electrical efficiency (ηel > 30 %), bringing the heat transfer fluid (water and glycol) up to an output temperature of 90°C. Accordingly with the experimental data collected from the first 1 kWe prototype, the total amount of extracted thermal energy is above the 50% of the harvested solar radiation. That, in addition the electrical efficiency of the system contributes to reach an overall CHP efficiency of more than the 80%.« less

Combined heat and power generation with a HCPV system at 2000 suns

NASA Astrophysics Data System (ADS)

Paredes, Filippo; Montagnino, Fabio M.; Salinari, Piero; Bonsignore, Gaetano; Milone, Sergio; Agnello, Simonpietro; Barbera, Marco; Gelardi, Franco M.; Sciortino, Luisa; Collura, Alfonso; Lo Cicero, Ugo; Cannas, Marco

2015-09-01

This work shows the development of an innovative solar CHP system for the combined production of heat and power based upon HCPV modules working at the high concentration level of 2000 suns. The solar radiation is concentrated on commercial InGaP/InGaAs/Ge triple-junction solar cells designed for intensive work. The primary optics is a rectangular off-axis parabolic mirror while a secondary optic at the focus of the parabolic mirror is glued in optical contact with the cell. Each module consist of 2 axis tracker (Alt-Alt type) with 20 multijunction cells each one integrated with an active heat sink. The cell is connected to an active heat transfer system that allows to keep the cell at a high level of electrical efficiency (ηel > 30 %), bringing the heat transfer fluid (water and glycol) up to an output temperature of 90°C. Accordingly with the experimental data collected from the first 1 kWe prototype, the total amount of extracted thermal energy is above the 50% of the harvested solar radiation. That, in addition the electrical efficiency of the system contributes to reach an overall CHP efficiency of more than the 80%.

Potential of thin-film solar cell module technology

NASA Technical Reports Server (NTRS)

Shimada, K.; Ferber, R. R.; Costogue, E. N.

1985-01-01

During the past five years, thin-film cell technology has made remarkable progress as a potential alternative to crystalline silicon cell technology. The efficiency of a single-junction thin-film cell, which is the most promising for use in flat-plate modules, is now in the range of 11 percent with 1-sq cm cells consisting of amorphous silicon, CuInSe2 or CdTe materials. Cell efficiencies higher than 18 percent, suitable for 15 percent-efficient flat plate modules, would require a multijunction configuration such as the CdTe/CuInSe2 and tandem amorphous-silicon (a-Si) alloy cells. Assessments are presented of the technology status of thin-film-cell module research and the potential of achieving the higher efficiencies required for large-scale penetration into the photovoltaic (PV) energy market.

Enhanced mobility CsPbI 3 quantum dot arrays for record-efficiency, high-voltage photovoltaic cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sanehira, Erin M.; Marshall, Ashley R.; Christians, Jeffrey A.

Here, we developed lead halide perovskite quantum dot (QD) films with tuned surface chemistry based on A-site cation halide salt (AX) treatments. QD perovskites offer colloidal synthesis and processing using industrially friendly solvents, which decouples grain growth from film deposition, and at present produce larger open-circuit voltages (V OC's) than thin-film perovskites. CsPbI 3 QDs, with a tunable bandgap between 1.75 and 2.13 eV, are an ideal top cell candidate for all-perovskite multijunction solar cells because of their demonstrated small V OC deficit. We show that charge carrier mobility within perovskite QD films is dictated by the chemical conditions atmore » the QD-QD junctions. The AX treatments provide a method for tuning the coupling between perovskite QDs, which is exploited for improved charge transport for fabricating high-quality QD films and devices. The AX treatments presented here double the film mobility, enabling increased photocurrent, and lead to a record certified QD solar cell efficiency of 13.43%.« less

Enhanced mobility CsPbI 3 quantum dot arrays for record-efficiency, high-voltage photovoltaic cells

DOE PAGES

Sanehira, Erin M.; Marshall, Ashley R.; Christians, Jeffrey A.; ...

2017-10-27

Here, we developed lead halide perovskite quantum dot (QD) films with tuned surface chemistry based on A-site cation halide salt (AX) treatments. QD perovskites offer colloidal synthesis and processing using industrially friendly solvents, which decouples grain growth from film deposition, and at present produce larger open-circuit voltages (V OC's) than thin-film perovskites. CsPbI 3 QDs, with a tunable bandgap between 1.75 and 2.13 eV, are an ideal top cell candidate for all-perovskite multijunction solar cells because of their demonstrated small V OC deficit. We show that charge carrier mobility within perovskite QD films is dictated by the chemical conditions atmore » the QD-QD junctions. The AX treatments provide a method for tuning the coupling between perovskite QDs, which is exploited for improved charge transport for fabricating high-quality QD films and devices. The AX treatments presented here double the film mobility, enabling increased photocurrent, and lead to a record certified QD solar cell efficiency of 13.43%.« less

A direct thin-film path towards low-cost large-area III-V photovoltaics

PubMed Central

Kapadia, Rehan; Yu, Zhibin; Wang, Hsin-Hua H.; Zheng, Maxwell; Battaglia, Corsin; Hettick, Mark; Kiriya, Daisuke; Takei, Kuniharu; Lobaccaro, Peter; Beeman, Jeffrey W.; Ager, Joel W.; Maboudian, Roya; Chrzan, Daryl C.; Javey, Ali

2013-01-01

III-V photovoltaics (PVs) have demonstrated the highest power conversion efficiencies for both single- and multi-junction cells. However, expensive epitaxial growth substrates, low precursor utilization rates, long growth times, and large equipment investments restrict applications to concentrated and space photovoltaics (PVs). Here, we demonstrate the first vapor-liquid-solid (VLS) growth of high-quality III-V thin-films on metal foils as a promising platform for large-area terrestrial PVs overcoming the above obstacles. We demonstrate 1–3 μm thick InP thin-films on Mo foils with ultra-large grain size up to 100 μm, which is ~100 times larger than those obtained by conventional growth processes. The films exhibit electron mobilities as high as 500 cm2/V-s and minority carrier lifetimes as long as 2.5 ns. Furthermore, under 1-sun equivalent illumination, photoluminescence efficiency measurements indicate that an open circuit voltage of up to 930 mV can be achieved, only 40 mV lower than measured on a single crystal reference wafer. PMID:23881474

Modeling of defect tolerance of IMM multijunction photovoltaics for space application

NASA Astrophysics Data System (ADS)

Mehrotra, Akhil; Freundlich, Alex

2013-03-01

Reduction of defects by use of thick sophisticated graded metamorphic buffers in inverted metamorphic solar cells has been a requirement to obtain high efficiency devices. With increase in number of metamorphic junctions to obtain higher efficiencies, these graded buffers constitute a significant part of growth time and cost for manufacturer of the solar cells. It's been shown that ultrathin 3 and 4 junction IMM devices perform better in presence of dislocations or/and radiation harsh environment compared to conventional thick IMM devices. Thickness optimization of the device would result in better defect and radiation tolerant behavior of 0.7ev and 1.0ev InGaAs sub-cells which would in turn require thinner buffers with higher efficiencies, hence reducing the total device thickness. It is also shown that for 3 and 4 junc. IMM, with an equivalent 1015 cm-2 1 MeV electron fluence radiation, very high EOL efficiencies can be afforded with substantially higher dislocation densities (<2×107 cm-2) than those commonly perceived as acceptable for IMM devices with remaining power factor as high as 0.85. The irregular radiation degradation behavior in 4-junc IMM is also explained by back photon reflection from gold contacts and reduced by using thickness optimization of 0.7ev and 1.0ev InGaAs sub-cells.

Multijunction Solar Cells Optimized for the Mars Surface Solar Spectrum

NASA Technical Reports Server (NTRS)

Edmondson, Kenneth M.; Fetzer, Chris; Karam, Nasser H.; Stella, Paul; Mardesich, Nick; Mueller, Robert

2007-01-01

This paper gives an update on the performance of the Mars Exploration Rovers (MER) which have been continually performing for more than 3 years beyond their original 90-day missions. The paper also gives the latest results on the optimization of a multijunction solar cell that is optimized to give more power on the surface of Mars.

The effect of different module configurations on the radiation tolerance of multijunction solar cells

NASA Technical Reports Server (NTRS)

Gee, James M.; Curtis, Henry B.

1988-01-01

The effect of different module configurations on the performance of multijunction (MJ) solar cells in a radiation environment was investigated. Module configuration refers to the electrical circuit in which the subcells of the multijunction cell are wired. Experimental data for AlCaAs, GaAs, InGaAs, and silicon single-junction concentrator cells subjected to 1 MeV electron irradiation was used to calculate the expected performance of AlGaAs/InGaAs, AlGa/silicon, GaAs/InGaAs, and GaAs/silicon Mj concentrator cells. These calculations included independent, series, and voltage-matched configurations. The module configuration was found to have a significant impact on the radiation tolerance characteristic of the MJ cells.

The handling of thin substrates and its potential for new architectures in multi-junction solar cells technology

NASA Astrophysics Data System (ADS)

Colin, Clément; Jaouad, Abdelatif; Darnon, Maxime; De Lafontaine, Mathieu; Volatier, Maïté; Boucherif, Abderraouf; Arès, Richard; Fafard, Simon; Aimez, Vincent

2017-09-01

In this paper, we investigate the development of a robust handling process for thin (<50 µm) substrates in the framework of the monolithic multi-junction solar cell (MJSC) technology. The process, designed for its versatility, is based on a temporary front side bonding of the cell with a polymeric adhesive and then a permanent back side soldering, allowing classical cell micro-fabrication steps on both sides of the wafer. We have demonstrated that the process does not degrade the performances of monolithic MJSC with Ge substrates thickness reduced from 170 µm to 25 µm. Then, we investigate a perspective unlocked with this work: the study of 3D-interconnect architecture for multi-junction solar cells.

On-Orbit Demonstration of a Lithium-Ion Capacitor and Thin-Film Multijunction Solar Cells

NASA Astrophysics Data System (ADS)

Kukita, Akio; Takahashi, Masato; Shimazaki, Kazunori; Kobayashi, Yuki; Sakai, Tomohiko; Toyota, Hiroyuki; Takahashi, Yu; Murashima, Mio; Uno, Masatoshi; Imaizumi, Mitsuru

2014-08-01

This paper describes an on-orbit demonstration of the Next-generation Small Satellite Instrument for Electric power systems (NESSIE) on which an aluminum- laminated lithium-ion capacitor (LIC) and a lightweight solar panel called KKM-PNL, which has space solar sheets using thin-film multijunction solar cells, were installed. The flight data examined in this paper covers a period of 143 days from launch. We verified the integrity of an LIC constructed using a simple and lightweight mounting method: no significant capacitance reduction was observed. We also confirmed that inverted metamorphic multijunction triple-junction thin-film solar cells used for evaluation were healthy at 143 days after launch, because their degradation almost matched the degradation predictions for dual-junction thin-film solar cells.

Microfabricated multijunction thermal converters

NASA Astrophysics Data System (ADS)

Wunsch, Thomas Franzen

2001-12-01

In order to develop improved standards for the measurement of ac voltages and currents, a new thin-film fabrication technique for the multijunction thermal converter has been developed. The ability of a thermal converter to relate an rms ac voltage or current to a dc value is characterized by a quantity called `ac-dc difference' that is ideally zero. The best devices produced using the new techniques have ac-dc differences below 1 × 10-6 in the range of frequencies from 20 Hz to 10 kHz and below 7.5 × 10-6 in the range of frequencies from 20 kHz to 300 kHz. This is a reduction of two orders of magnitude in the lower frequency range and one order of magnitude in the higher frequency range over devices produced at the National Institute of Standards and Technology in 1996. The performance achieved is competitive with the best techniques in the world for ac measurements and additional evaluation is therefore warranted to determine the suitability of the devices for use as national standards that form the legal basis for traceable rms voltage measurements of time varying waveforms in the United States. The construction of the new devices is based on thin-film fabrication of a heated wire supported by a thermally isolated thin-film membrane. The membrane is produced utilizing a reactive ion plasma etch. A photoresist lift- off technique is used to pattern the metal thin-film layers that form the heater and the multijunction thermocouple circuit. The etching and lift-off allow the device to be produced without wet chemical etches that are time consuming and impede the investigation of structures with differing materials. These techniques result in an approach to fabrication that is simple, inexpensive, and free from the manual construction techniques used in the fabrication of conventional single and multijunction thermoelements. Thermal, thermoelectric, and electrical models have been developed to facilitate designs that reduce the low- frequency error. At high frequencies, from 300 kHz to 1 MHz, the performance of the device is degraded by a capacitive coupling effect that produces an ac-dc difference of approximately -90 × 10-6 at 1 MHz. A model is developed that explains this behavior. The model shows that an improvement in performance in the high-frequency range is possible through the use of very high or very low resistivity silicon substrates.

State-of-the-art Architectures and Technologies of High-Efficiency Solar Cells Based on III-V Heterostructures for Space and Terrestrial Applications

NASA Astrophysics Data System (ADS)

Pakhanov, N. A.; Andreev, V. M.; Shvarts, M. Z.; Pchelyakov, O. P.

2018-03-01

Multi-junction solar cells based on III-V compounds are the most efficient converters of solar energy to electricity and are widely used in space solar arrays and terrestrial photovoltaic modules with sunlight concentrators. All modern high-efficiency III-V solar cells are based on the long-developed triple-junction III-V GaInP/GaInAs/Ge heterostructure and have an almost limiting efficiency for a given architecture — 30 and 41.6% for space and terrestrial concentrated radiations, respectively. Currently, an increase in efficiency is achieved by converting from the 3-junction to the more efficient 4-, 5-, and even 6-junction III-V architectures: growth technologies and methods of post-growth treatment of structures have been developed, new materials with optimal bandgaps have been designed, and crystallographic parameters have been improved. In this review, we consider recent achievements and prospects for the main directions of research and improvement of architectures, technologies, and materials used in laboratories to develop solar cells with the best conversion efficiency: 35.8% for space, 38.8% for terrestrial, and 46.1% for concentrated sunlight. It is supposed that by 2020, the efficiency will approach 40% for direct space radiation and 50% for concentrated terrestrial solar radiation. This review considers the architecture and technologies of solar cells with record-breaking efficiency for terrestrial and space applications. It should be noted that in terrestrial power plants, the use of III-V SCs is economically advantageous in systems with sunlight concentrators.

Tunnel junction enhanced nanowire ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarwar, A. T. M. Golam; May, Brelon J.; Deitz, Julia I.

Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ∼6 V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The combination of both reduced bias voltage and increased hole injection increases the wall plug efficiency in these devices. More than 100 μW of UV emission at ∼310 nm is measured with external quantum efficiency in the range of 4–6 m%. The realization of tunnel junctionmore » within the nanowire LEDs opens a pathway towards the monolithic integration of cascaded multi-junction nanowire LEDs on silicon.« less

Wafer integrated micro-scale concentrating photovoltaics

NASA Astrophysics Data System (ADS)

Gu, Tian; Li, Duanhui; Li, Lan; Jared, Bradley; Keeler, Gordon; Miller, Bill; Sweatt, William; Paap, Scott; Saavedra, Michael; Das, Ujjwal; Hegedus, Steve; Tauke-Pedretti, Anna; Hu, Juejun

2017-09-01

Recent development of a novel micro-scale PV/CPV technology is presented. The Wafer Integrated Micro-scale PV approach (WPV) seamlessly integrates multijunction micro-cells with a multi-functional silicon platform that provides optical micro-concentration, hybrid photovoltaic, and mechanical micro-assembly. The wafer-embedded micro-concentrating elements is shown to considerably improve the concentration-acceptance-angle product, potentially leading to dramatically reduced module materials and fabrication costs, sufficient angular tolerance for low-cost trackers, and an ultra-compact optical architecture, which makes the WPV module compatible with commercial flat panel infrastructures. The PV/CPV hybrid architecture further allows the collection of both direct and diffuse sunlight, thus extending the geographic and market domains for cost-effective PV system deployment. The WPV approach can potentially benefits from both the high performance of multijunction cells and the low cost of flat plate Si PV systems.

Utility of Thin-Film Solar Cells on Flexible Substrates for Space Power

NASA Technical Reports Server (NTRS)

Dickman, J. E.; Hepp, A. F.; Morel, D. L.; Ferekides, C. S.; Tuttle, J. R.; Hoffman, D. J.; Dhere, N. G.

2004-01-01

The thin-film solar cell program at NASA GRC is developing solar cell technologies for space applications which address two critical metrics: specific power (power per unit mass) and launch stowed volume. To be competitive for many space applications, an array using thin film solar cells must significantly increase specific power while reducing stowed volume when compared to the present baseline technology utilizing crystalline solar cells. The NASA GRC program is developing two approaches. Since the vast majority of the mass of a thin film solar cell is in the substrate, a thin film solar cell on a very lightweight flexible substrate (polymer or metal films) is being developed as the first approach. The second approach is the development of multijunction thin film solar cells. Total cell efficiency can be increased by stacking multiple cells having bandgaps tuned to convert the spectrum passing through the upper cells to the lower cells. Once developed, the two approaches will be merged to yield a multijunction, thin film solar cell on a very lightweight, flexible substrate. The ultimate utility of such solar cells in space require the development of monolithic interconnections, lightweight array structures, and ultra-lightweight support and deployment techniques.

Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

DOE PAGES

Zhu, Yuankun; Mendelsberg, Rueben J.; Zhu, Jiaqi; ...

2012-11-26

Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). In this study, it is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10 -5 Ωcm, high electron mobility of 142 cm 2/Vs, and mean transmittance over 80% frommore » 500-1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.« less

Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics

DOE PAGES

Ritenour, Andrew J.; Boucher, Jason W.; DeLancey, Robert; ...

2014-09-01

The high balance-of-system costs of photovoltaic (PV) installations indicate that reductions in cell $/W costs alone are likely insufficient for PV electricity to reach grid parity unless energy conversion efficiency is also increased. Technologies which yield both high-efficiency cells (>25%) and maintain low costs are needed. GaAs and related III-V semiconductors are used in the highest-efficiency single- and multi-junction photovoltaics, but the technology is too expensive for non-concentrated terrestrial applications. This is due in part to the difficulty of scaling the metal-organic chemical vapor deposition (MOCVD) process, which relies on expensive reactors and employs toxic and pyrophoric gas-phase precursors suchmore » as arsine and trimethyl gallium, respectively. In this study, we describe GaAs films made by an alternative close-spaced vapor transport (CSVT) technique which is carried out at atmospheric pressure and requires only bulk GaAs, water vapor, and a temperature gradient in order to deposit crystalline films with similar electronic properties to that of GaAs deposited by MOCVD. CSVT is similar to the vapor transport process used to deposit CdTe thin films and is thus a potentially scalable low-cost route to GaAs thin films.« less

TEM verification of the <111>-type 4-arm multi-junction in [001]-Mo single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hsiung, L

2005-03-14

To investigate and verify the formation of <111>-type 4-arm multi-junction by the dislocation reaction of 1/2[111] [b1] + 1/2[{bar 1}1{bar 1}] [b2] + 1/2[{bar 1}{bar 1}1] [b3] = 1/2[{bar 1}11] [b4], which has recently been discovered through computer simulations conducted by Vasily Bulatov and his colleagues.

Inorganic Photovoltaics Materials and Devices: Past, Present, and Future

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Bailey, Sheila G.; Rafaelle, Ryne P.

2005-01-01

This report describes recent aspects of advanced inorganic materials for photovoltaics or solar cell applications. Specific materials examined will be high-efficiency silicon, gallium arsenide and related materials, and thin-film materials, particularly amorphous silicon and (polycrystalline) copper indium selenide. Some of the advanced concepts discussed include multi-junction III-V (and thin-film) devices, utilization of nanotechnology, specifically quantum dots, low-temperature chemical processing, polymer substrates for lightweight and low-cost solar arrays, concentrator cells, and integrated power devices. While many of these technologies will eventually be used for utility and consumer applications, their genesis can be traced back to challenging problems related to power generation for aerospace and defense. Because this overview of inorganic materials is included in a monogram focused on organic photovoltaics, fundamental issues and metrics common to all solar cell devices (and arrays) will be addressed.

Progress in amorphous silicon based large-area multijunction modules

NASA Astrophysics Data System (ADS)

Carlson, D. E.; Arya, R. R.; Bennett, M.; Chen, L.-F.; Jansen, K.; Li, Y.-M.; Maley, N.; Morris, J.; Newton, J.; Oswald, R. S.; Rajan, K.; Vezzetti, D.; Willing, F.; Yang, L.

1996-01-01

Solarex, a business unit of Amoco/Enron Solar, is scaling up its a-Si:H/a-SiGe:H tandem device technology for the production of 8 ft2 modules. The current R&D effort is focused on improving the performance, reliability and cost-effectiveness of the tandem junction technology by systematically optimizing the materials and interfaces in small-area single- and tandem junction cells. Average initial conversion efficiencies of 8.8% at 85% yield have been obtained in pilot production runs with 4 ft2 tandem modules.

Modeling Laser Effects on Multi-Junction Solar Cells Using Silvaco ATLAS Software for Spacecraft Power Beaming Applications

DTIC Science & Technology

2010-06-01

could not. Figure 11 shows the Indium Gallium Phosphide (InGaP)- Gallium Arsenide (GaAs)- Germanium (Ge) solar cell utilization of the solar spectrum...2 opcv nL  (4.4) p = 1, 2, 3, … nr = index of refraction of the cavity co = speed of light in a vacuum (m/s) L = cavity length (meters...illumination – ηsolar  Efficiency under solar illumination – n Number of electrons – nr Index of refraction –  Photon frequency Hz ΔFSR

Multi-Quantum Well Structures to Improve the Performance of Multijunction Solar Cells

NASA Astrophysics Data System (ADS)

Samberg, Joshua Paul

Current, lattice matched triple junction solar cell efficiency is approximately 44% at a solar concentration of 942x. Higher efficiency for such cells can be realized with the development of a 1eV bandgap material lattice matched to Ge. One of the more promising materials for this application is that of the InGaAs/GaAsP multi-quantum well (MQW) structure. By inserting a stress/strain-balanced InGaAs/GaAsP MQW structure into the iregion of a GaAs p-i-n diode, the absorption edge of the p-i-n diode can be red shifted with respect to that of a standard GaAs p-n diode. Compressive stress in the InGaAs wells are balanced via GaAsP barriers subjected to tensile stress. Individually, the InGaAs and GaAsP layers are grown below their critical layer thickness to prevent the formation of misfit and threading dislocations. Until recently InGaAs/GaAsP MQWs have been somewhat hindered by their usage of low phosphorus-GaAsP barriers. Presented within is the development of a high-P composition GaAsP and the merits for using such a high composition of phosphorus are discussed. It is believed that these barriers represent the highest phosphorus content to date in such a structure. By using high composition GaAsP the carriers are collected via tunneling (for barriers .30A) as opposed to thermionic emission. Thus, by utilizing thin, high content GaAsP barriers one can increase the percentage of the intrinsic region in a p-i-n structure that is comprised of the InGaAs well in addition to increasing the number of periods that can be grown for a given depletion width. However, standard MQWs of this type inherently possess undesirable compressive strain and quantum size effects (QSE) that cause the optical absorption of the InGaAs wells to blue shift. To circumvent these deleterious QSEs stress balanced, pseudomorphic InGaAs/GaAsP staggered MQWs were developed. Tunneling is still a viable mode for carrier transport in the staggered MQW structures. GaAs interfacial layers within the multi-quantum well have been found to be critical in producing quality multi-quantum well structures. The effect of the GaAs interfacial layers has been investigated. It was determined that a phosphorus carry-over had a profound effect on the absorption edge of the InGaAs wells. It was shown that the phosphorus carry-over can be prevented with sufficiently thick GaAs transition layers. Preliminary results for GaAs p-in solar cells utilizing the improved MQWs are presented. In addition to investigating the utilization of quantum wells in the i-region of a GaAs p-i-n diode to improve the efficiency of multijunction solar cells, an investigation into the effect a single GaAs:Te doped quantum well has on the performance of high bandgap InxGa1- xP:Te/Al0.6Ga 0.4As:C tunnel junctions was investigated. The insertion of 30A of GaAs:Te at the junction interface resulted in a peak current of 1000A/cm2 and a voltage drop of ~3mV for 30A/cm2 (2000x concentration). The presence of this GaAs interfacial layer also improved the uniformity across the wafer. This architecture could be used within multijunction solar cells to extend the range of usable solar concentration with minimal voltage drop.

High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bedair, S. M., E-mail: bedair@ncsu.edu; Harmon, Jeffrey L.; Carlin, C. Zachary

2016-05-16

The performance of n{sup +}-InGaP(Te)/p{sup +}-AlGaAs(C) high band gap tunnel junctions (TJ) is critical for achieving high efficiency in multijunction photovoltaics. Several limitations for as grown and annealed TJ can be attributed to the Te doping of InGaP and its behavior at the junction interface. Te atoms in InGaP tend to get attached at step edges, resulting in a Te memory effect. In this work, we use the peak tunneling current (J{sub pk}) in this TJ as a diagnostic tool to study the behavior of the Te dopant at the TJ interface. Additionally, we used our understanding of Te behaviormore » at the interface, guided by device modeling, to modify the Te source shut-off procedure and the growth rate. These modifications lead to a record performance for both the as-grown (2000 A/cm{sup 2}) and annealed (1000 A/cm{sup 2}) high band gap tunnel junction.« less

Recent advancements in monolithic AlGaAs/GaAs solar cells for space applications

NASA Technical Reports Server (NTRS)

Wickham, K. R.; Chung, B.-C.; Klausmeier-Brown, M.; Kuryla, M. S.; Ristow, M. Ladle; Virshup, G. F.; Werthen, J. G.

1991-01-01

High efficiency, two terminal, multijunction AlGaAs/GaAs solar cells were reproducibly made with areas of 0.5 sq cm. The multiple layers in the cells were grown by Organo Metallic Vapor Phase Epitaxy (OMVPE) on GaAs substrates in the n-p configuration. The upper AlGaAs cell has a bandgap of 1.93 eV and is connected in series to the lower GaAs cell (1.4 eV) via a metal interconnect deposited during post-growth processing. A prismatic coverglass is installed on top of the cell to reduce obscuration caused by the gridlines. The best 0.5 sq cm cell has a two terminal efficiency of 23.0 pct. at 1 sun, air mass zero (AM0) and 25 C. To date, over 300 of these cells were grown and processed for a manufacturing demonstration. Yield and efficiency data for this demonstration are presented. As a first step toward the goal of a 30 pct. efficient cell, a mechanical stack of the 0.5 sq cm cells described above, and InGaAsP (0.95 eV) solar cells was made. The best two terminal measurement to date yields an efficiency of 25.2 pct. AM0. This is the highest reported efficiency of any two terminal, 1 sun space solar cell.

Conversion efficiency limits and bandgap designs for multi-junction solar cells with internal radiative efficiencies below unity.

PubMed

Zhu, Lin; Mochizuki, Toshimitsu; Yoshita, Masahiro; Chen, Shaoqiang; Kim, Changsu; Akiyama, Hidefumi; Kanemitsu, Yoshihiko

2016-05-16

We calculated the conversion-efficiency limit ηsc and the optimized subcell bandgap energies of 1 to 5 junction solar cells without and with intermediate reflectors under 1-sun AM1.5G and 1000-sun AM1.5D irradiations, particularly including the impact of internal radiative efficiency (ηint) below unity for realistic subcell materials on the basis of an extended detailed-balance theory. We found that the conversion-efficiency limit ηsc significantly drops when the geometric mean ηint* of all subcell ηint in the stack reduces from 1 to 0.1, and that ηsc degrades linearly to logηint* for ηint* below 0.1. For ηint*<0.1 differences in ηsc due to additional intermediate reflectors became very small if all subcells are optically thick for sun light. We obtained characteristic optimized bandgap energies, which reflect both ηint* decrease and AM1.5 spectral gaps. These results provide realistic efficiency targets and design principles.

High-Efficiency, Multijunction Solar Cells for Large-Scale Solar Electricity Generation

NASA Astrophysics Data System (ADS)

Kurtz, Sarah

2006-03-01

A solar cell with an infinite number of materials (matched to the solar spectrum) has a theoretical efficiency limit of 68%. If sunlight is concentrated, this limit increases to about 87%. These theoretical limits are calculated using basic physics and are independent of the details of the materials. In practice, the challenge of achieving high efficiency depends on identifying materials that can effectively use the solar spectrum. Impressive progress has been made with the current efficiency record being 39%. Today's solar market is also showing impressive progress, but is still hindered by high prices. One strategy for reducing cost is to use lenses or mirrors to focus the light on small solar cells. In this case, the system cost is dominated by the cost of the relatively inexpensive optics. The value of the optics increases with the efficiency of the solar cell. Thus, a concentrator system made with 35%- 40%-efficient solar cells is expected to deliver 50% more power at a similar cost when compare with a system using 25%-efficient cells. Today's markets are showing an opportunity for large concentrator systems that didn't exist 5-10 years ago. Efficiencies may soon pass 40% and ultimately may reach 50%, providing a pathway to improved performance and decreased cost. Many companies are currently investigating this technology for large-scale electricity generation. The presentation will cover the basic physics and more practical considerations to achieving high efficiency as well as describing the current status of the concentrator industry. This work has been authored by an employee of the Midwest Research Institute under Contract No. DE- AC36-99GO10337 with the U.S. Department of Energy. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a non-exclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this work, or allow others to do so, for United States Government purposes.

AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

NASA Technical Reports Server (NTRS)

Dinetta, L. C.; Hannon, M. H.; Mcneely, J. B.; Barnett, A. M.

1991-01-01

The AstroPower self-supporting, transparent AlGaAs top solar cell can be stacked upon any well-developed bottom solar cell for improved system performance. This is an approach to improve the performance and scale of space photovoltaic power systems. Mechanically stacked tandem solar cell concentrator systems based on the AlGaAs top concentrator solar cell can provide near term efficiencies of 36 percent (AMO, 100x). Possible tandem stack efficiencies greater than 38 percent (100x, AMO) are feasible with a careful selection of materials. In a three solar cell stack, system efficiencies exceed 41 percent (100x, AMO). These device results demonstrate a practical solution for a state-of-the-art top solar cell for attachment to an existing, well-developed solar cell.

Quantum-engineered interband cascade photovoltaic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Razeghi, Manijeh; Tournié, Eric; Brown, Gail J.

2013-12-18

Quantum-engineered multiple stage photovoltaic (PV) devices are explored based on InAs/GaSb/AlSb interband cascade (IC) structures. These ICPV devices employ multiple discrete absorbers that are connected in series by widebandgap unipolar barriers using type-II heterostructure interfaces for facilitating carrier transport between cascade stages similar to IC lasers. The discrete architecture is beneficial for improving the collection efficiency and for spectral splitting by utilizing absorbers with different bandgaps. As such, the photo-voltages from each individual cascade stage in an ICPV device add together, creating a high overall open-circuit voltage, similar to conventional multi-junction tandem solar cells. Furthermore, photo-generated carriers can be collectedmore » with nearly 100% efficiency in each stage. This is because the carriers travel over only a single cascade stage, designed to be shorter than a typical diffusion length. The approach is of significant importance for operation at high temperatures where the diffusion length is reduced. Here, we will present our recent progress in the study of ICPV devices, which includes the demonstration of ICPV devices at room temperature and above with narrow bandgaps (e.g. 0.23 eV) and high open-circuit voltages. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.« less

Metamorphic III–V Solar Cells: Recent Progress and Potential

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garcia, Ivan; France, Ryan M.; Geisz, John F.

Inverted metamorphic multijunction solar cells have been demonstrated to be a pathway to achieve the highest photovoltaic (PV) conversion efficiencies. Attaining high-quality lattice-mismatched (metamorphic) semiconductor devices is challenging. However, recent improvements to compositionally graded buffer epitaxy and junction structures have led to the achievement of high-quality metamorphic solar cells exhibiting internal luminescence efficiencies over 90%. For this high material quality, photon recycling is significant, and therefore, the optical environment of the solar cell becomes important. In this paper, we first present recent progress and performance results for 1- and 0.7-eV GaInAs solar cells grown on GaAs substrates. Then, an electroopticalmore » model is used to assess the potential performance improvements in current metamorphic solar cells under different realizable design scenarios. The results show that the quality of 1-eV subcells is such that further improving its electronic quality does not produce significant Voc increases in the four-junction inverted metamorphic subcells, unless a back reflector is used to enhance photon recycling, which would significantly complicate the structure. Conversely, improving the electronic quality of the 0.7-eV subcell would lead to significant Voc boosts, driving the progress of four-junction inverted metamorphic solar cells.« less

Progress in a-SiOx:H thin film solar cells with patterned MgF2 dielectric for top cell of multi-junction system

NASA Astrophysics Data System (ADS)

Kang, Dong-Won; Sichanugrist, Porponth; Konagai, Makoto

2016-07-01

We successfully designed and experimentally demonstrated an application of patterned MgF2 dielectric material at rear Al-doped ZnO (AZO)/Ag interface in thin film amorphous silicon oxide ( a-SiOx:H) solar cells. When it was realized in practical device process, MgF2 coverage with patterned morphology was employed to allow for current flow between the AZO and Ag against highly resistive MgF2 material. On the basis of the suggested structure, we found an improvement in quantum efficiency of the solar cells with the patterned MgF2. In addition, an enhancement of open circuit voltage ( V oc ) and fill factor ( FF) was observed. A remarkable increase in shunt resistance of the cells with the MgF2 would possibly indicate that the highly resistive MgF2 layer can partly suppress physical shunting across top and bottom electrodes caused by very thin absorber thickness of only 100 nm. The approach showed that our best-performing device revealed an essential improvement in conversion efficiency from 7.83 to 8.01% with achieving markedly high V oc (1.013 V) and FF (0.729). [Figure not available: see fulltext.

A High-Voltage Molecular-Engineered Organic Sensitizer-Iron Redox Shuttle Pair: 1.4 V DSSC and 3.3 V SSM-DSSC Devices.

PubMed

Rodrigues, Roberta R; Cheema, Hammad; Delcamp, Jared H

2018-05-04

The development of high voltage solar cells is an attractive way to use sunlight for solar-to-fuel devices, multijunction solar-to-electric systems, and to power limited-area consumer electronics. By designing a low-oxidation-potential organic dye (RR9)/redox shuttle (Fe(bpy) 3 3+/2+ ) pair for dye-sensitized solar-cell (DSSC) devices, the highest single device photovoltage (1.42 V) has been realized for a DSSC not relying on doped TiO 2 . Additionally, Fe(bpy) 3 3+/2+ offers a robust, readily tunable ligand platform for redox potential tuning. RR9 can be regenerated with a low driving force (190 mV), and by utilizing the RR9/Fe(bpy) 3 3+/2+ redox shuttle pair in a subcell for a sequential series multijunction (SSM)-DSSC system, one of the highest known three subcell photovoltage was attained for any solar-cell technology (3.34 V, >1.0 V per subcell). © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Field test analysis of concentrator photovoltaic system focusing on average photon energy and temperature

NASA Astrophysics Data System (ADS)

Husna, Husyira Al; Ota, Yasuyuki; Minemoto, Takashi; Nishioka, Kensuke

2015-08-01

The concentrator photovoltaic (CPV) system is unique and different from the common flat-plate PV system. It uses a multi-junction solar cell and a Fresnel lens to concentrate direct solar radiation onto the cell while tracking the sun throughout the day. The cell efficiency could reach over 40% under high concentration ratio. In this study, we analyzed a one year set of environmental condition data of the University of Miyazaki, Japan, where the CPV system was installed. Performance ratio (PR) was discussed to describe the system’s performance. Meanwhile, the average photon energy (APE) was used to describe the spectrum distribution at the site where the CPV system was installed. A circuit simulator network was used to simulate the CPV system electrical characteristics under various environmental conditions. As for the result, we found that the PR of the CPV systems depends on the APE level rather than the cell temperature.

Thin film, concentrator, and multijunction space solar cells: Status and potential

NASA Technical Reports Server (NTRS)

Flood, Dennis J.

1991-01-01

Recent, rapid advances in a variety of solar cell technologies offer the potential for significantly enhancing, or enabling entirely new, mission capabilities. Thin film solar cells are of particular interest. A review is provided of the status of those thin film cell technologies of interest for space applications, and the issues to be resolved before mission planners can consider them. A short summary of recent developments in concentrator and multijunction space solar cell and array technology is given.

Enhanced Contacts for Inverted Metamorphic Multi-Junction Solar Cells Using Carbon Nanotube Metal Matrix Composites

DTIC Science & Technology

2018-01-18

to a variety solar energy markets. For instance, micro-cracks have been shown to cause decreased power output in single- and multi-crystalline Si PV ...fingers in silicon wafer solar cells and PV modules," Solar Energy Materials and Solar Cells, vol. 108, pp. 78-81, 1// 2013. [4] T. H. Reijenga and H...AFRL-RV-PS- AFRL-RV-PS- TR-2017-0125 TR-2017-0125 ENHANCED CONTACTS FOR INVERTED METAMORPHIC MULTI-JUNCTION SOLAR CELLS USING CARBON NANOTUBE METAL

Thin film, concentrator and multijunction space solar cells: Status and potential

NASA Technical Reports Server (NTRS)

Flood, Dennis J.

1991-01-01

Recent, rapid advances in a variety of solar cell technologies offer the potential for significantly enhancing, or enabling entirely new, mission capabilities. Thin film solar cells are of particular interest in that regard. A review is provided of the status of those thin film cell technologies of interest for space applications, and the issues to be resolved before mission planners can consider them. A short summary is also given of recent developments in concentrator and multijunction space solar cell and array technology.

Space Photovoltaic Research and Technology, 1989

NASA Technical Reports Server (NTRS)

1991-01-01

Remarkable progress on a wide variety of approaches in space photovoltaics, for both near and far term applications is reported. Papers were presented in a variety of technical areas, including multi-junction cell technology, GaAs and InP cells, system studies, cell and array development, and non-solar direct conversion. Five workshops were held to discuss the following topics: mechanical versus monolithic multi-junction cells; strategy in space flight experiments; non-solar direct conversion; indium phosphide cells; and space cell theory and modeling.

Accurate reconstruction of the jV-characteristic of organic solar cells from measurements of the external quantum efficiency

NASA Astrophysics Data System (ADS)

Meyer, Toni; Körner, Christian; Vandewal, Koen; Leo, Karl

2018-04-01

In two terminal tandem solar cells, the current density - voltage (jV) characteristic of the individual subcells is typically not directly measurable, but often required for a rigorous device characterization. In this work, we reconstruct the jV-characteristic of organic solar cells from measurements of the external quantum efficiency under applied bias voltages and illumination. We show that it is necessary to perform a bias irradiance variation at each voltage and subsequently conduct a mathematical correction of the differential to the absolute external quantum efficiency to obtain an accurate jV-characteristic. Furthermore, we show that measuring the external quantum efficiency as a function of voltage for a single bias irradiance of 0.36 AM1.5g equivalent sun provides a good approximation of the photocurrent density over voltage curve. The method is tested on a selection of efficient, common single-junctions. The obtained conclusions can easily be transferred to multi-junction devices with serially connected subcells.

Non-native Co-, Mn-, and Ti-oxyhydroxide nanocrystals in ferritin for high efficiency solar energy conversion

NASA Astrophysics Data System (ADS)

Erickson, S. D.; Smith, T. J.; Moses, L. M.; Watt, R. K.; Colton, J. S.

2015-01-01

Quantum dot solar cells seek to surpass the solar energy conversion efficiencies achieved by bulk semiconductors. This new field requires a broad selection of materials to achieve its full potential. The 12 nm spherical protein ferritin can be used as a template for uniform and controlled nanocrystal growth, and to then house the nanocrystals for use in solar energy conversion. In this study, precise band gaps of titanium, cobalt, and manganese oxyhydroxide nanocrystals within ferritin were measured, and a change in band gap due to quantum confinement effects was observed. The range of band gaps obtainable from these three types of nanocrystals is 2.19-2.29 eV, 1.93-2.15 eV, and 1.60-1.65 eV respectively. From these measured band gaps, theoretical efficiency limits for a multi-junction solar cell using these ferritin-enclosed nanocrystals are calculated and found to be 38.0% for unconcentrated sunlight and 44.9% for maximally concentrated sunlight. If a ferritin-based nanocrystal with a band gap similar to silicon can be found (i.e. 1.12 eV), the theoretical efficiency limits are raised to 51.3% and 63.1%, respectively. For a current matched cell, these latter efficiencies become 41.6% (with an operating voltage of 5.49 V), and 50.0% (with an operating voltage of 6.59 V), for unconcentrated and maximally concentrated sunlight respectively.

Hybrid photovoltaic-thermoelectric system for concentrated solar energy conversion: Experimental realization and modeling

NASA Astrophysics Data System (ADS)

Beeri, Ofer; Rotem, Oded; Hazan, Eden; Katz, Eugene A.; Braun, Avi; Gelbstein, Yaniv

2015-09-01

An experimental demonstration of the combined photovoltaic (PV) and thermoelectric conversion of concentrated sunlight (with concentration factor, X, up to ˜300) into electricity is presented. The hybrid system is based on a multi-junction PV cell and a thermoelectric generator (TEG). The latter increases the electric power of the system and dissipates some of the excessive heat. For X ≤ 200, the system's maximal efficiency, ˜32%, was mostly due to the contribution from the PV cell. With increasing X and system temperature, the PV cell's efficiency decreased while that of the TEG increased. Accordingly, the direct electrical contribution of the TEG started to dominate in the total system power, reaching ˜20% at X ≈ 290. Using a simple steady state finite element modeling, the cooling effect of the TEG on the hybrid system's efficiency was proved to be even more significant than its direct electrical contribution for high solar concentrations. As a result, the total efficiency contribution of the TEG reached ˜40% at X ≈ 200. This suggests a new system optimization concept that takes into account the PV cell's temperature dependence and the trade-off between the direct electrical generation and cooling capabilities of the TEG. It is shown that the hybrid system has a real potential to exceed 50% total efficiency by using more advanced PV cells and TE materials.

Spectrum sensitivity, energy yield, and revenue prediction of PV and CPV modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kinsey, Geoffrey S., E-mail: Geoffrey.kinsey@ee.doe.gov

2015-09-28

Impact on module performance of spectral irradiance variation has been determined for III-V multijunctions compared against the four most common flat-plate module types (cadmium telluride, multicrystalline silicon, copper indium gallium selenide, and monocrystalline silicon. Hour-by-hour representative spectra were generated using atmospheric variables for Albuquerque, New Mexico, USA. Convolution with published values for external quantum efficiency gave the predicted current output. When combined with specifications of commercial PV modules, energy yield and revenue were predicted. This approach provides a means for optimizing PV module design based on various site-specific temporal variables.

Spectrum sensitivity, energy yield, and revenue prediction of PV and CPV modules

NASA Astrophysics Data System (ADS)

Kinsey, Geoffrey S.

2015-09-01

Impact on module performance of spectral irradiance variation has been determined for III-V multijunctions compared against the four most common flat-plate module types (cadmium telluride, multicrystalline silicon, copper indium gallium selenide, and monocrystalline silicon. Hour-by-hour representative spectra were generated using atmospheric variables for Albuquerque, New Mexico, USA. Convolution with published values for external quantum efficiency gave the predicted current output. When combined with specifications of commercial PV modules, energy yield and revenue were predicted. This approach provides a means for optimizing PV module design based on various site-specific temporal variables.

Ferritin-based nanocrystals for solar energy harvesting

NASA Astrophysics Data System (ADS)

Colton, John; Erickson, Stephen; Olsen, Cameron; Embley, Jacob; Smith, Trevor; Watt, Richard

2015-03-01

Ferritin is a 12 nm diameter hollow protein with an 8 nm cavity that can be filled with a variety of nanocrystals (ferrihydrite being native). We report on several experiments with ferritin-based nanocrystals designed to utilize ferritin for solar energy harvesting. First, we have shown that the native band gap can be altered by controlling nanocrystal size, by replacing the native iron oxide core with other metal oxides, and by depositing halides and oxo-anions with the iron oxide core. This gives available band gaps of 1.6 to 2.3 eV. Theoretical efficiency calculations based on these band gaps show that the efficiency of a multi-junction solar cell based on layered structures of ferritin can be as high as 44.9 %, and up to 63.1 % if a ferritin-based material with band gap of 1.1 eV can be developed. For the latter case, the efficiencies remain quite high even in a current-matched configuration, namely 50.0 %. We have also demonstrated that photo-excitation of these materials can produce charge separation and give rise to usable electrons; we have used photo-excited electrons to reduce gold in solution and thereby produce gold nanoparticles on the surface of the ferritin. This technique can potentially be extended to platinum, whose nanoparticles catalyze water splitting. This research was partially supported by the Utah Office of Energy Development, Governor's Energy Leadership Scholars Program.

Cross-sectional transport imaging in a multijunction solar cell

DOE PAGES

Haegel, Nancy M.; Ke, Chi -Wen; Taha, Hesham; ...

2016-12-01

Here, we combine a highly localized electron-beam point source excitation to generate excess free carriers with the spatial resolution of optical near-field imaging to map recombination in a cross-sectioned multijunction (Ga 0.5In 0.5P/GaIn 0.01As/Ge) solar cell. By mapping the spatial variations in emission of light for fixed generation (as opposed to traditional cathodoluminescence (CL), which maps integrated emission as a function of position of generation), it is possible to directly monitor the motion of carriers and photons. We observe carrier diffusion throughout the full width of the middle (GaInAs) cell, as well as luminescent coupling from point source excitation inmore » the top cell GaInP to the middle cell. Supporting CL and near-field photoluminescence (PL) measurements demonstrate the excitation-dependent Fermi level splitting effects that influence cross-sectioned spectroscopy results, as well as transport limitations on the spatial resolution of conventional cross-sectional far-field measurements.« less

Multijunction photovoltaic device and fabrication method

DOEpatents

Arya, Rajeewa R.; Catalano, Anthony W.

1993-09-21

A multijunction photovoltaic device includes first and second amorphous silicon PIN photovoltaic cells in a stacked arrangement. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one or the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers. The disclosed device is fabricated by a glow discharge process.

Field Performance versus Standard Test Condition Efficiency of Tandem Solar Cells and the Singular Case of Perovskites/Silicon Devices.

PubMed

Dupré, Olivier; Niesen, Bjoern; De Wolf, Stefaan; Ballif, Christophe

2018-01-18

Multijunction cells may offer a cost-effective route to boost the efficiency of industrial photovoltaics. For any technology to be deployed in the field, its performance under actual operating conditions is extremely important. In this perspective, we evaluate the impact of spectrum, light intensity, and module temperature variations on the efficiency of tandem devices with crystalline silicon bottom cells with a particular focus on perovskite top cells. We consider devices with different efficiencies and calculate their energy yields using field data from Denver. We find that annual losses due to differences between operating conditions and standard test conditions are similar for single-junction and four-terminal tandem devices. The additional loss for the two-terminal tandem configuration caused by current mismatch reduces its performance ratio by only 1.7% when an optimal top cell bandgap is used. Additionally, the unusual bandgap temperature dependence of perovskites is shown to have a positive, compensating effect on current mismatch.

Quantum junction solar cells.

PubMed

Tang, Jiang; Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Wang, Xihua; Furukawa, Melissa; Levina, Larissa; Sargent, Edward H

2012-09-12

Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO(2)); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics.

Optical design considerations for high-concentration photovoltaics

NASA Astrophysics Data System (ADS)

Garboushian, Vahan; Gordon, Robert

2006-08-01

Over the past 15 years, major advances in Concentrating Photovoltaics (CPV) have been achieved. Ultra-efficient Si solar cells have produced commercial concentration systems which are being fielded today and are competitively priced. Advanced research has primarily focused on significantly more efficient multi-junction solar cells for tomorrow's systems. This effort has produced sophisticated solar cells that significantly improve power production. Additional performance and cost improvements, especially in the optical system area and system integration, must be made before CPV can realize its ultimate commercial potential. Structural integrity and reliability are vital for commercial success. As incremental technical improvements are made in solar cell technologies, evaluation and 'fine-tuning' of optical systems properly matched to the solar cell are becoming increasingly necessary. As we move forward, it is increasingly important to optimize all of the interrelated elements of a CPV system for high performance without sacrificing the marketable cost and structural requirements of the system. Areas such as wavelength absorption of refractive optics need to be carefully matched to the solar cell technology employed. Reflective optics require advanced engineering models to insure uniform flux distribution without excessive losses. In Situ measurement of the 'fine-grain' improvements are difficult as multiple variables such as solar insolation, temperature, wind, altitude, etc. infringe on analytical data. This paper discusses design considerations based on 10 years of field trials of high concentration systems and their relevance for tomorrow's advanced CPV systems.

One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy

NASA Astrophysics Data System (ADS)

Sahoo, Prasana K.; Memaran, Shahriar; Xin, Yan; Balicas, Luis; Gutiérrez, Humberto R.

2018-01-01

Two-dimensional heterojunctions of transition-metal dichalcogenides have great potential for application in low-power, high-performance and flexible electro-optical devices, such as tunnelling transistors, light-emitting diodes, photodetectors and photovoltaic cells. Although complex heterostructures have been fabricated via the van der Waals stacking of different two-dimensional materials, the in situ fabrication of high-quality lateral heterostructures with multiple junctions remains a challenge. Transition-metal-dichalcogenide lateral heterostructures have been synthesized via single-step, two-step or multi-step growth processes. However, these methods lack the flexibility to control, in situ, the growth of individual domains. In situ synthesis of multi-junction lateral heterostructures does not require multiple exchanges of sources or reactors, a limitation in previous approaches as it exposes the edges to ambient contamination, compromises the homogeneity of domain size in periodic structures, and results in long processing times. Here we report a one-pot synthetic approach, using a single heterogeneous solid source, for the continuous fabrication of lateral multi-junction heterostructures consisting of monolayers of transition-metal dichalcogenides. The sequential formation of heterojunctions is achieved solely by changing the composition of the reactive gas environment in the presence of water vapour. This enables selective control of the water-induced oxidation and volatilization of each transition-metal precursor, as well as its nucleation on the substrate, leading to sequential edge-epitaxy of distinct transition-metal dichalcogenides. Photoluminescence maps confirm the sequential spatial modulation of the bandgap, and atomic-resolution images reveal defect-free lateral connectivity between the different transition-metal-dichalcogenide domains within a single crystal structure. Electrical transport measurements revealed diode-like responses across the junctions. Our new approach offers greater flexibility and control than previous methods for continuous growth of transition-metal-dichalcogenide-based multi-junction lateral heterostructures. These findings could be extended to other families of two-dimensional materials, and establish a foundation for the development of complex and atomically thin in-plane superlattices, devices and integrated circuits.

SCARLET: Design of the Fresnel concentrator array for New Millennium Deep Space 1

DOE Office of Scientific and Technical Information (OSTI.GOV)

Murphy, D.M.; Eskenazi, M.I.

1997-12-31

The primary power for the JPL New Millennium Deep Space 1 spacecraft is a 2.6 kW concentrator solar array. This paper surveys the design and analysis employed to combine line-focus Fresnel lenses and multijunction (GaInP{sub 2}/GaAs/Ge) solar cells in the second-generation SCARLET (Solar Concentrator Array with Refractive Linear Element Technology) system. The array structure and mechanisms are reviewed. Discussion is focused on the lens and receiver, from the optimizations of optical efficiency and thermal management, to the design issues of environmental extremes, reliability, producibility, and control of pointing error.

GaAs Photovoltaics on Polycrystalline Ge Substrates

NASA Technical Reports Server (NTRS)

Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

2007-01-01

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

Aqueous-Processed Inorganic Thin-Film Solar Cells Based on CdSe(x)Te(1-x) Nanocrystals: The Impact of Composition on Photovoltaic Performance.

PubMed

Zeng, Qingsen; Chen, Zhaolai; Zhao, Yue; Du, Xiaohang; Liu, Fangyuan; Jin, Gan; Dong, Fengxia; Zhang, Hao; Yang, Bai

2015-10-21

Aqueous processed nanocrystal (NC) solar cells are attractive due to their environmental friendliness and cost effectiveness. Controlling the bandgap of absorbing layers is critical for achieving high efficiency for single and multijunction solar cells. Herein, we tune the bandgap of CdTe through the incorporation of Se via aqueous process. The photovoltaic performance of aqueous CdSexTe1-x NCs is systematically investigated, and the impacts of charge generation, transport, and injection on device performance for different compositions are deeply discussed. We discover that the performance degrades with the increasing Se content from CdTe to CdSe. This is mainly ascribed to the lower conduction band (CB) of CdSexTe1-x with higher Se content, which reduces the driving force for electron injection into TiO2. Finally, the performance is improved by mixing CdSexTe1-x NCs with conjugated polymer poly(p-phenylenevinylene) (PPV), and power conversion efficiency (PCE) of 3.35% is achieved based on ternary NCs. This work may provide some information to further optimize the aqueous-processed NC and hybrid solar cells.

Thermodynamic efficiency limits of classical and bifacial multi-junction tandem solar cells: An analytical approach

NASA Astrophysics Data System (ADS)

Alam, Muhammad Ashraful; Khan, M. Ryyan

2016-10-01

Bifacial tandem cells promise to reduce three fundamental losses (i.e., above-bandgap, below bandgap, and the uncollected light between panels) inherent in classical single junction photovoltaic (PV) systems. The successive filtering of light through the bandgap cascade and the requirement of current continuity make optimization of tandem cells difficult and accessible only to numerical solution through computer modeling. The challenge is even more complicated for bifacial design. In this paper, we use an elegantly simple analytical approach to show that the essential physics of optimization is intuitively obvious, and deeply insightful results can be obtained with a few lines of algebra. This powerful approach reproduces, as special cases, all of the known results of conventional and bifacial tandem cells and highlights the asymptotic efficiency gain of these technologies.

Highly Efficient Perovskite-Perovskite Tandem Solar Cells Reaching 80% of the Theoretical Limit in Photovoltage.

PubMed

Rajagopal, Adharsh; Yang, Zhibin; Jo, Sae Byeok; Braly, Ian L; Liang, Po-Wei; Hillhouse, Hugh W; Jen, Alex K-Y

2017-09-01

Organic-inorganic hybrid perovskite multijunction solar cells have immense potential to realize power conversion efficiencies (PCEs) beyond the Shockley-Queisser limit of single-junction solar cells; however, they are limited by large nonideal photovoltage loss (V oc,loss ) in small- and large-bandgap subcells. Here, an integrated approach is utilized to improve the V oc of subcells with optimized bandgaps and fabricate perovskite-perovskite tandem solar cells with small V oc,loss . A fullerene variant, Indene-C 60 bis-adduct, is used to achieve optimized interfacial contact in a small-bandgap (≈1.2 eV) subcell, which facilitates higher quasi-Fermi level splitting, reduces nonradiative recombination, alleviates hysteresis instabilities, and improves V oc to 0.84 V. Compositional engineering of large-bandgap (≈1.8 eV) perovskite is employed to realize a subcell with a transparent top electrode and photostabilized V oc of 1.22 V. The resultant monolithic perovskite-perovskite tandem solar cell shows a high V oc of 1.98 V (approaching 80% of the theoretical limit) and a stabilized PCE of 18.5%. The significantly minimized nonideal V oc,loss is better than state-of-the-art silicon-perovskite tandem solar cells, which highlights the prospects of using perovskite-perovskite tandems for solar-energy generation. It also unlocks opportunities for solar water splitting using hybrid perovskites with solar-to-hydrogen efficiencies beyond 15%. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Transport Imaging of Multi-Junction and CIGS Solar Cell Materials

DTIC Science & Technology

2011-12-01

solar cells start with the material charge transport parameters, namely the charge mobility, lifetime and diffusion length . It is the goal of...every solar cell manufacturer to maintain high carrier lifetime so as to realize long diffusion lengths . Long diffusion lengths ensure that the charges...Thus, being able to accurately determine the diffusion length of any solar cell material proves advantageous by providing insights

Modular, Reconfigurable, High-Energy Systems Stepping Stones

NASA Technical Reports Server (NTRS)

Howell, Joe T.; Carrington, Connie K.; Mankins, John C.

2005-01-01

Modular, Reconfigurable, High-Energy Systems are Stepping Stones to provide capabilities for energy-rich infrastructure strategically located in space to support a variety of exploration scenarios. Abundant renewable energy at lunar or L1 locations could support propellant production and storage in refueling scenarios that enable affordable exploration. Renewable energy platforms in geosynchronous Earth orbits can collect and transmit power to satellites, or to Earth-surface locations. Energy-rich space technologies also enable the use of electric-powered propulsion systems that could efficiently deliver cargo and exploration facilities to remote locations. A first step to an energy-rich space infrastructure is a 100-kWe class solar-powered platform in Earth orbit. The platform would utilize advanced technologies in solar power collection and generation, power management and distribution, thermal management, and electric propulsion. It would also provide a power-rich free-flying platform to demonstrate in space a portfolio of technology flight experiments. This paper presents a preliminary design concept for a 100-kWe solar-powered satellite with the capability to flight-demonstrate a variety of payload experiments and to utilize electric propulsion. State-of-the-art solar concentrators, highly efficient multi-junction solar cells, integrated thermal management on the arrays, and innovative deployable structure design and packaging make the 100-kW satellite feasible for launch on one existing launch vehicle. Higher voltage arrays and power management and distribution (PMAD) systems reduce or eliminate the need for massive power converters, and could enable direct- drive of high-voltage solar electric thrusters.

Degradation of Silicone Encapsulants in CPV Optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cai, Can; Miller, David C.; Tappan, Ian A.

High efficiency multijunction solar cells in terrestrial concentrator photovoltaic (CPV) modules are becoming an increasingly cost effective and viable option in utility scale power generation. As with other utility scale photovoltaics, CPV modules need to guarantee operational lifetimes of at least 25 years. The reliability of optical elements in CPV modules poses a unique materials challenge due to the increased UV irradiance and enhanced temperature cycling associated with concentrated solar flux. The polymeric and thin film materials used in the optical elements are especially susceptible to UV damage, diurnal temperature cycling and active chemical species from the environment. We usedmore » fracture mechanics approaches to study the degradation modes including: the adhesion between the encapsulant and the cell or secondary optical element; and the cohesion of the encapsulant itself. Understanding the underlying mechanisms of materials degradation under elevated stress conditions is critical for commercialization of CPV technology and can offer unique insights into degradation modes in similar encapsulants used in other photovoltaic modules.« less

Degradation of Silicone Encapsulants in CPV Optics: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, David C.; Tappan, Ian A.; Cai, Can

High efficiency multijunction solar cells in terrestrial concentrator photovoltaic (CPV) modules are becoming an increasingly cost effective and viable option in utility scale power generation. As with other utility scale photovoltaics, CPV modules need to guarantee operational lifetimes of at least 25 years. The reliability of optical elements in CPV modules poses a unique materials challenge due to the increased UV irradiance and enhanced temperature cycling associated with concentrated solar flux. The polymeric and thin film materials used in the optical elements are especially susceptible to UV damage, diurnal temperature cycling and active chemical species from the environment. We usedmore » fracture mechanics approaches to study the degradation modes including: the adhesion between the encapsulant and the cell or secondary optical element; and the cohesion of the encapsulant itself. Understanding the underlying mechanisms of materials degradation under elevated stress conditions is critical for commercialization of CPV technology and can offer unique insights into degradation modes in similar encapsulants used in other photovoltaic modules.« less

UNISAT-3 Power System

NASA Astrophysics Data System (ADS)

Santoni, Fabio; Piergentili, Fabrizio; Bulgarelli, Fabio; Graziani, Filippo

2005-05-01

An overview of the UNISAT-3 microsatellite power subsystem is given. This is an educational, low weight and low cost microsatellite designed, built, launched and operated in space by students and professors of Scuola di Ingegneria Aerospaziale, at University of Rome "La Sapienza". The satellite power system is based on terrestrial technology solar arrays and NiCd batteries. The microsatellite hosts other solar arrays, including multi-junction solar cells and mono- crystalline silicon high efficiency solar cells, in order to compare their behaviour in orbit. Moreover a MPPT (Maximum Power Point Tracking ) system has been designed and tested, and it is a technological payload of UNISAT-3. The MPPT design follows the studies performed in the field of solar powered racing cars, with modifications to make the system suitable for use in space. The system design, numerical simulation and hardware ground testing are described in the paper. The experiment and the performance evaluation criterion are described, together with the preliminary results of the first eight months of operation in orbit.

Electrical-optical characterization of multijunction solar cells under 2000X concentration

NASA Astrophysics Data System (ADS)

Bonsignore, Gaetano; Gallitto, Aurelio Agliolo; Agnello, Simonpietro; Barbera, Marco; Candia, Roberto; Cannas, Marco; Collura, Alfonso; Dentici, Ignazio; Gelardi, Franco Mario; Cicero, Ugo Lo; Montagnino, Fabio Maria; Paredes, Filippo; Sciortino, Luisa

2014-09-01

In the framework of the FAE "Fotovoltaico ad Alta Efficienza" ("High Efficiency Photovoltaic") Research Project (PO FESR Sicilia 2007/2013 4.1.1.1), we have performed electrical and optical characterizations of commercial InGaP/InGaAs/Ge triple-junction solar cells (1 cm2) mounted on a prototype HCPV module, installed in Palermo (Italy). This system uses a reflective optics based on rectangular off-axis parabolic mirror with aperture 45×45 cm2 leading to a geometrical concentration ratio of 2025. In this study, we report the I-V curve measured under incident power of about 700 W/m2 resulting in an electrical power at maximum point (PMP) of 41.4 W. We also investigated the optical properties by the electroluminescence (EL) spectra of the top (InGaP) and middle (InGaAs) subcells. From the analysis of the experimental data we extracted the bandgap energies of these III-V semiconductors in the range 305÷385 K.

Thin-Film Photovoltaic Solar Array Parametric Assessment

NASA Technical Reports Server (NTRS)

Hoffman, David J.; Kerslake, Thomas W.; Hepp, Aloysius F.; Jacobs, Mark K.; Ponnusamy, Deva

2000-01-01

This paper summarizes a study that had the objective to develop a model and parametrically determine the circumstances for which lightweight thin-film photovoltaic solar arrays would be more beneficial, in terms of mass and cost, than arrays using high-efficiency crystalline solar cells. Previous studies considering arrays with near-term thin-film technology for Earth orbiting applications are briefly reviewed. The present study uses a parametric approach that evaluated the performance of lightweight thin-film arrays with cell efficiencies ranging from 5 to 20 percent. The model developed for this study is described in some detail. Similar mass and cost trends for each array option were found across eight missions of various power levels in locations ranging from Venus to Jupiter. The results for one specific mission, a main belt asteroid tour, indicate that only moderate thin-film cell efficiency (approx. 12 percent) is necessary to match the mass of arrays using crystalline cells with much greater efficiency (35 percent multi-junction GaAs based and 20 percent thin-silicon). Regarding cost, a 12 percent efficient thin-film array is projected to cost about half is much as a 4-junction GaAs array. While efficiency improvements beyond 12 percent did not significantly further improve the mass and cost benefits for thin-film arrays, higher efficiency will be needed to mitigate the spacecraft-level impacts associated with large deployed array areas. A low-temperature approach to depositing thin-film cells on lightweight, flexible plastic substrates is briefly described. The paper concludes with the observation that with the characteristics assumed for this study, ultra-lightweight arrays using efficient, thin-film cells on flexible substrates may become a leading alternative for a wide variety of space missions.

Comparative modelling of lower hybrid current drive with two launcher designs in the Tore Supra tokamak

NASA Astrophysics Data System (ADS)

Nilsson, E.; Decker, J.; Peysson, Y.; Artaud, J.-F.; Ekedahl, A.; Hillairet, J.; Aniel, T.; Basiuk, V.; Goniche, M.; Imbeaux, F.; Mazon, D.; Sharma, P.

2013-08-01

Fully non-inductive operation with lower hybrid current drive (LHCD) in the Tore Supra tokamak is achieved using either a fully active multijunction (FAM) launcher or a more recent ITER-relevant passive active multijunction (PAM) launcher, or both launchers simultaneously. While both antennas show comparable experimental efficiencies, the analysis of stability properties in long discharges suggest different current profiles. We present comparative modelling of LHCD with the two different launchers to characterize the effect of the respective antenna spectra on the driven current profile. The interpretative modelling of LHCD is carried out using a chain of codes calculating, respectively, the global discharge evolution (tokamak simulator METIS), the spectrum at the antenna mouth (LH coupling code ALOHA), the LH wave propagation (ray-tracing code C3PO), and the distribution function (3D Fokker-Planck code LUKE). Essential aspects of the fast electron dynamics in time, space and energy are obtained from hard x-ray measurements of fast electron bremsstrahlung emission using a dedicated tomographic system. LHCD simulations are validated by systematic comparisons between these experimental measurements and the reconstructed signal calculated by the code R5X2 from the LUKE electron distribution. An excellent agreement is obtained in the presence of strong Landau damping (found under low density and high-power conditions in Tore Supra) for which the ray-tracing model is valid for modelling the LH wave propagation. Two aspects of the antenna spectra are found to have a significant effect on LHCD. First, the driven current is found to be proportional to the directivity, which depends upon the respective weight of the main positive and main negative lobes and is particularly sensitive to the density in front of the antenna. Second, the position of the main negative lobe in the spectrum is different for the two launchers. As this lobe drives a counter-current, the resulting driven current profile is also different for the FAM and PAM launchers.

Experimental characterization and modeling of non-linear coupling of the LHCD power on Tore Supra

DOE Office of Scientific and Technical Information (OSTI.GOV)

Preynas, M.; Goniche, M.; Hillairet, J.

2014-02-12

To achieve steady state operation on future tokamaks, in particular on ITER, the unique capability of a LHCD system to efficiently drive off-axis non-inductive current is needed. In this context, it is of prime importance to study and master the coupling of LH wave to the core plasma at high power density (tens of MW/m{sup 2}). In some specific conditions, deleterious effects on the LHCD coupling are sometimes observed on Tore Supra. At high power the waves may modify the edge parameters that change the wave coupling properties in a non-linear manner. In this way, dedicated LHCD experiments have beenmore » performed using the LHCD system of Tore Supra, composed of two different conceptual designs of launcher: the Fully Active Multijunction (FAM) and the new Passive Active Multijunction (PAM) antennas. A nonlinear interaction between the electron density and the electric field has been characterized in a thin plasma layer in front of the two LHCD antennas. The resulting dependence of the power reflection coefficient with the LHCD power, leading occasionally to trips in the output power, is not predicted by the standard linear theory of the LH wave coupling. Therefore, it is important to investigate and understand the possible origin of such non-linear effects in order to avoid their possible deleterious consequences. The PICCOLO-2D code, which self-consistently treats the wave propagation in the antenna vicinity and its interaction with the local edge plasma density, is used to simulate Tore Supra discharges. The simulation reproduces very well the occurrence of a non-linear behavior in the coupling observed in the LHCD experiments. The important differences and trends between the FAM and the PAM antennas, especially a larger increase in RC for the FAM, are also reproduced by the PICCOLO-2D simulation. The working hypothesis of the contribution of the ponderomotive effect in the non-linear observations of LHCD coupling is therefore validated through this comprehensive modeling for the first time on the FAM and PAM antennas on Tore Supra.« less

Ultraminiaturized photovoltaic and radio frequency powered optoelectronic systems for wireless optogenetics.

PubMed

Park, Sung Il; Shin, Gunchul; Banks, Anthony; McCall, Jordan G; Siuda, Edward R; Schmidt, Martin J; Chung, Ha Uk; Noh, Kyung Nim; Mun, Jonathan Guo-Han; Rhodes, Justin; Bruchas, Michael R; Rogers, John A

2015-10-01

Wireless control and power harvesting systems that operate injectable, cellular-scale optoelectronic components provide important demonstrated capabilities in neuromodulatory techniques such as optogenetics. Here, we report a radio frequency (RF) control/harvesting device that offers dramatically reduced size, decreased weight and improved efficiency compared to previously reported technologies. Combined use of this platform with ultrathin, multijunction, high efficiency solar cells allows for hundred-fold reduction of transmitted RF power, which greatly enhances the wireless coverage. Fabrication involves separate construction of the harvester and the injectable µ-ILEDs. To test whether the presence of the implantable device alters behavior, we implanted one group of wild type mice and compared sociability behavior to unaltered controls. Social interaction experiments followed protocols defined by Silverman et al. with minor modifications. The results presented here demonstrate that miniaturized RF harvesters, and RF control strategies with photovoltaic harvesters can, when combined with injectable µ-ILEDs, offer versatile capabilities in optogenetics. Experimental and modeling studies establish a range of effective operating conditions for these two approaches. Optogenetics studies with social groups of mice demonstrate the utility of these systems. The addition of miniaturized, high performance photovoltaic cells significantly expands the operating range and reduces the required RF power. The platform can offer capabilities to modulate signaling path in the brain region of freely-behaving animals. These suggest its potential for widespread use in neuroscience.

A review of recent progress in heterogeneous silicon tandem solar cells

NASA Astrophysics Data System (ADS)

Yamaguchi, Masafumi; Lee, Kan-Hua; Araki, Kenji; Kojima, Nobuaki

2018-04-01

Silicon solar cells are the most established solar cell technology and are expected to dominate the market in the near future. As state-of-the-art silicon solar cells are approaching the Shockley-Queisser limit, stacking silicon solar cells with other photovoltaic materials to form multi-junction devices is an obvious pathway to further raise the efficiency. However, many challenges stand in the way of fully realizing the potential of silicon tandem solar cells because heterogeneously integrating silicon with other materials often degrades their qualities. Recently, above or near 30% silicon tandem solar cell has been demonstrated, showing the promise of achieving high-efficiency and low-cost solar cells via silicon tandem. This paper reviews the recent progress of integrating solar cell with other mainstream solar cell materials. The first part of this review focuses on the integration of silicon with III-V semiconductor solar cells, which is a long-researched topic since the emergence of III-V semiconductors. We will describe the main approaches—heteroepitaxy, wafer bonding and mechanical stacking—as well as other novel approaches. The second part introduces the integration of silicon with polycrystalline thin-film solar cells, mainly perovskites on silicon solar cells because of its rapid progress recently. We will also use an analytical model to compare the material qualities of different types of silicon tandem solar cells and project their practical efficiency limits.

Design and fabrication of cascaded dichromate gelatin holographic filters for spectrum-splitting PV systems

NASA Astrophysics Data System (ADS)

Wu, Yuechen; Chrysler, Benjamin; Kostuk, Raymond K.

2018-01-01

The technique of designing, optimizing, and fabricating broadband volume transmission holograms using dichromate gelatin (DCG) is summarized for solar spectrum-splitting applications. The spectrum-splitting photovoltaic (PV) system uses a series of single-bandgap PV cells that have different spectral conversion efficiency properties to more fully utilize the solar spectrum. In such a system, one or more high-performance optical filters are usually required to split the solar spectrum and efficiently send them to the corresponding PV cells. An ideal spectral filter should have a rectangular shape with sharp transition wavelengths. A methodology of designing and modeling a transmission DCG hologram using coupled wave analysis for different PV bandgap combinations is described. To achieve a broad diffraction bandwidth and sharp cutoff wavelength, a cascaded structure of multiple thick holograms is described. A search algorithm is then developed to optimize both single- and two-layer cascaded holographic spectrum-splitting elements for the best bandgap combinations of two- and three-junction spectrum-splitting photovoltaic (SSPV) systems illuminated under the AM1.5 solar spectrum. The power conversion efficiencies of the optimized systems are found to be 42.56% and 48.41%, respectively, using the detailed balance method, and show an improvement compared with a tandem multijunction system. A fabrication method for cascaded DCG holographic filters is also described and used to prototype the optimized filter for the three-junction SSPV system.

Toward a III-V Multijunction Space Cell Technology on Si

NASA Technical Reports Server (NTRS)

Ringel, S. A.; Lueck, M. R.; Andre, C. L.; Fitzgerald, E. A.; Wilt, D. M.; Scheiman, D.

2007-01-01

High efficiency compound semiconductor solar cells grown on Si substrates are of growing interest in the photovoltaics community for both terrestrial and space applications. As a potential substrate for III-V compound photovoltaics, Si has many advantages over traditional Ge and GaAs substrates that include higher thermal conductivity, lower weight, lower material costs, and the potential to leverage the extensive manufacturing base of the Si industry. Such a technology that would retain high solar conversion efficiency at reduced weight and cost would result in space solar cells that simultaneously possess high specific power (W/kg) and high power density (W/m2). For terrestrial solar cells this would result in high efficiency III-V concentrators with improved thermal conductivity, reduced cost, and via the use of SiGe graded interlayers as active component layers the possibility of integrating low bandgap sub-cells that could provide for extremely high conversion efficiency.1 In addition to photovoltaics, there has been an historical interest in III-V/Si integration to provide optical interconnects in Si electronics, which has become of even greater relevance recently due to impending bottlenecks in CMOS based circuitry. As a result, numerous strategies to integrate GaAs with Si have been explored with the primary issue being the approx.4% lattice mismatch between GaAs and Si. Among these efforts, relaxed, compositionally-graded SiGe buffer layers where the substrate lattice constant is effectively tuned from Si to that of Ge so that a close lattice match to subsequent GaAs overlayers have shown great promise. With this approach, threading dislocation densities (TDDs) of approx.1 x 10(exp 6)/sq cm have been uniformly achieved in relaxed Ge layers on Si,5 leading to GaAs on Si with minority carrier lifetimes greater than 10 ns,6 GaAs single junction solar cells on Si with efficiencies greater than 18%,7 InGaAs CW laser diodes on Si,8 and room temperature GaInP red laser diodes on Si.9 Here we report on the first high performance dual junction GaInP/GaAs solar cells grown on Si using this promising SiGe engineered substrate approach.

CEEM Final Technical Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bowers, John

The mission of the Center for Energy Efficient Materials (CEEM) was to serve the Department of Energy and the nation as a center of excellence dedicated to advancing basic research in nano-structured materials and devices for applications to solar electricity, thermoelectric conversion of waste heat to electricity, and solidstate lighting. The foundation of CEEM was based on the unique capabilities of UCSB and its partner institutions to control, synthesize, characterize, model, and apply materials at the nanoscale for more efficient sustainable energy resources. This unique expertise was a key source of the synergy that unified the research of the Center.more » Although the Center’s focus was basic research, It’s longer-term objective has been to transfer new materials and devices into the commercial sector where they will have a substantial impact on the nation’s need for efficient sustainable energy resources. As one measure of the impact of the Center, two start-up companies were formed based on its research. In addition, Center participants published a total of 210 archival journal articles, of which 51 were exclusively sponsored by the DOE grant. The work of the Center was structured around four specific tasks: Organic Solar Cells, Solid-State Lighting, Thermoelectrics, and High Efficiency Multi-junction Photovoltaic devices. A brief summary of each follows – detailed descriptions are in Sections 4 & 5 of this report. Research supported through CEEM led to an important shift with respect to the choice of materials used for the fabrication of solution deposited organic solar cells. Solution deposition opens the opportunity to manufacture solar cells via economically-viable high throughput tools, such as roll to roll printing. Prior to CEEM, most organic semiconductors utilized for this purpose involved polymeric materials, which, although they can form thin films reliably, suffer from batch to batch variations due to the statistical nature of the chemical reactions that produce them. In response, the CEEM team developed well-defined molecular semiconductors that produce active layers with very high power conversion efficiencies, in other words they can convert a very high fraction of sunlight into useful electrical power. The fact that the semiconductor is formed from molecular species provides the basis for circumventing the unreliability of polymer counterparts and, as an additional bonus, allows one to attain much grater insight into the structure of the active layer. The latter is particularly important because efficient conversion is the result of a complex arrangement of two semiconductors that need to phase separate in a way akin to oil and water, but with domains that are described by nanoscale dimensions. CEEM was therefore able to provide deep insight into the influence of nanostructure, through the application of structural characterization tools and theoretical methods that describe how electrical charges migrate through the organic layer. Our research in light emitting diode (LED)-based solid state lighting (SSL) was directed at improving efficiency and reducing costs to enable the widespread deployment of economically-viable replacements for inefficient incandescent, halogen, and fluorescent-based lighting. Our specific focus was to advance the fundamental science and technology of light emitting diodes to both understand factors that limit efficiencies and to provide innovative and viable solutions to the current impediments. One of the main challenges we faced is the decrease in efficiency when LEDs are driven harder to increase light output---the so called “droop” effect. It requires large emitting surfaces to reach a desired optical output, and necessitates the use of costly heat sinks, both of which increase the cost. We successfully reduced droop by growing LED crystals having non-conventional orientations. As recognized by the award of the 2014 Nobel prize to the inventors of the nitride LEDs (one of whom was a member of CEEM), LEDs already have a large societal impact in both developed (leading to large energy savings) and developing countries (bringing light where there is no electrical grid). The improvements in efficiency sought after in the CEEM project are key to a further impact of solid state lighting by LEDs with a projected doubling in efficiency by year 2020. Direct generation of electricity from heat has enormous promise for beneficial use of waste heat. But practical power generation directly from heat requires understanding and development of new and improved materials that will be more efficient and rugged than today’s thermoelectric materials. To accomplish this goal CEEM has synthesized five distinct and promising new classes of thermoelectric materials: (a) nanoparticle arrays that are effective in maximizing electric power generation and reducing detrimental loss of heat; (b) nitride and (c) oxide thermal electric materials that are effective at high temperatures where much beneficial heat is available; (d) arrays of silicon nano-wires that integrate thermal electricity generation into silicon-based electronics and materials; and (e) chemically synthesized nanostructured compounds that are cost effective, earth abundant, and environmentally friendly. The further development of these thermoelectric sources of electricity could have revolutionary impact for society in the recovery of waste heat from sources such as power plants and automobile exhaust, where there could be significant associated energy saving. It could even, in the future, provide disruptive alternatives and replacements for today’s internal combustion engines and could enable improved all-electric propulsion by the heat from shipboard nuclear reactors. The High Efficiency Multi-junction Photovoltaics task was a UCSB/NREL collaboration which bonded sub-cells from two different compound semiconductors material systems to make high efficiency multijunction solar cells for concentrating photovoltaic applications thathave substantially higher efficiency than single substrate cells made of elemental semiconductors such as silicon. This task required the development of new cell bonding methods with excellent coupling of both photons and electrons between the sub-cells. To accomplish this, we developed (1) GaInN solar cells with enhanced performance by using quantum-well absorbers and front-surface optical texturing, (2) a hybrid "pillar-array" bond which uses an array of metal pillars for electrical coupling, and (3) a "hybrid moth-eye" optical coating which combines the benefits of nano-imprinted moth-eye coatings and traditional multilayer coatings. The technical effectiveness was assessed by measurement of the photovoltaic efficiency of solar cells made using these techniques; the ultrahigh efficiencies targeted by this work are of compelling economic value for concentrating photovoltaics.« less

Post passivation light trapping back contacts for silicon heterojunction solar cells.

PubMed

Smeets, M; Bittkau, K; Lentz, F; Richter, A; Ding, K; Carius, R; Rau, U; Paetzold, U W

2016-11-10

Light trapping in crystalline silicon (c-Si) solar cells is an essential building block for high efficiency solar cells targeting low material consumption and low costs. In this study, we present the successful implementation of highly efficient light-trapping back contacts, subsequent to the passivation of Si heterojunction solar cells. The back contacts are realized by texturing an amorphous silicon layer with a refractive index close to the one of crystalline silicon at the back side of the silicon wafer. As a result, decoupling of optically active and electrically active layers is introduced. In the long run, the presented concept has the potential to improve light trapping in monolithic Si multijunction solar cells as well as solar cell configurations where texturing of the Si absorber surfaces usually results in a deterioration of the electrical properties. As part of this study, different light-trapping textures were applied to prototype silicon heterojunction solar cells. The best path length enhancement factors, at high passivation quality, were obtained with light-trapping textures based on randomly distributed craters. Comparing a planar reference solar cell with an absorber thickness of 280 μm and additional anti-reflection coating, the short-circuit current density (J SC ) improves for a similar solar cell with light-trapping back contact. Due to the light trapping back contact, the J SC is enhanced around 1.8 mA cm -2 to 38.5 mA cm -2 due to light trapping in the wavelength range between 1000 nm and 1150 nm.

Concentrator photovoltaic module architectures with capabilities for capture and conversion of full global solar radiation

PubMed Central

Lee, Kyu-Tae; Yao, Yuan; He, Junwen; Fisher, Brent; Sheng, Xing; Lumb, Matthew; Xu, Lu; Anderson, Mikayla A.; Scheiman, David; Han, Seungyong; Kang, Yongseon; Gumus, Abdurrahman; Bahabry, Rabab R.; Lee, Jung Woo; Paik, Ungyu; Bronstein, Noah D.; Alivisatos, A. Paul; Meitl, Matthew; Burroughs, Scott; Hussain, Muhammad Mustafa; Lee, Jeong Chul; Nuzzo, Ralph G.; Rogers, John A.

2016-01-01

Emerging classes of concentrator photovoltaic (CPV) modules reach efficiencies that are far greater than those of even the highest performance flat-plate PV technologies, with architectures that have the potential to provide the lowest cost of energy in locations with high direct normal irradiance (DNI). A disadvantage is their inability to effectively use diffuse sunlight, thereby constraining widespread geographic deployment and limiting performance even under the most favorable DNI conditions. This study introduces a module design that integrates capabilities in flat-plate PV directly with the most sophisticated CPV technologies, for capture of both direct and diffuse sunlight, thereby achieving efficiency in PV conversion of the global solar radiation. Specific examples of this scheme exploit commodity silicon (Si) cells integrated with two different CPV module designs, where they capture light that is not efficiently directed by the concentrator optics onto large-scale arrays of miniature multijunction (MJ) solar cells that use advanced III–V semiconductor technologies. In this CPV+ scheme (“+” denotes the addition of diffuse collector), the Si and MJ cells operate independently on indirect and direct solar radiation, respectively. On-sun experimental studies of CPV+ modules at latitudes of 35.9886° N (Durham, NC), 40.1125° N (Bondville, IL), and 38.9072° N (Washington, DC) show improvements in absolute module efficiencies of between 1.02% and 8.45% over values obtained using otherwise similar CPV modules, depending on weather conditions. These concepts have the potential to expand the geographic reach and improve the cost-effectiveness of the highest efficiency forms of PV power generation. PMID:27930331

Concentrator photovoltaic module architectures with capabilities for capture and conversion of full global solar radiation

DOE PAGES

Lee, Kyu-Tae; Yao, Yuan; He, Junwen; ...

2016-12-05

Emerging classes ofconcentrator photovoltaic (CPV) modules reach efficiencies that are far greater than those of even the highest performance flat-plate PV technologies, with architectures that have the potential to provide the lowest cost of energy in locations with high direct normal irradiance (DNI). A disadvantage is their inability to effectively use diffuse sunlight, thereby constraining widespread geographic deployment and limiting performance even under the most favorable DNI conditions. This study introduces a module design that integrates capabilities in flat-plate PV directly with the most sophisticated CPV technologies, for capture of both direct and diffuse sunlight, thereby achieving efficiency in PVmore » conversion of the global solar radiation. Specific examples of this scheme exploit commodity silicon (Si) cells integrated with two different CPV module designs, where they capture light that is not efficiently directed by the concentrator optics onto large-scale arrays of miniature multijunction (MJ) solar cells that use advanced III-V semiconductor technologies. In this CPV + scheme ("+" denotes the addition of diffuse collector), the Si and MJ cells operate independently on indirect and direct solar radiation, respectively. On-sun experimental studies of CPV + modules at latitudes of 35.9886° N (Durham, NC), 40.1125° N (Bondville, IL), and 38.9072° N (Washington, DC) show improvements in absolute module efficiencies of between 1.02% and 8.45% over values obtained using otherwise similar CPV modules, depending on weather conditions. These concepts have the potential to expand the geographic reach and improve the cost-effectiveness of the highest efficiency forms of PV power generation.« less

Concentrator photovoltaic module architectures with capabilities for capture and conversion of full global solar radiation

NASA Astrophysics Data System (ADS)

Lee, Kyu-Tae; Yao, Yuan; He, Junwen; Fisher, Brent; Sheng, Xing; Lumb, Matthew; Xu, Lu; Anderson, Mikayla A.; Scheiman, David; Han, Seungyong; Kang, Yongseon; Gumus, Abdurrahman; Bahabry, Rabab R.; Lee, Jung Woo; Paik, Ungyu; Bronstein, Noah D.; Alivisatos, A. Paul; Meitl, Matthew; Burroughs, Scott; Mustafa Hussain, Muhammad; Lee, Jeong Chul; Nuzzo, Ralph G.; Rogers, John A.

2016-12-01

Emerging classes of concentrator photovoltaic (CPV) modules reach efficiencies that are far greater than those of even the highest performance flat-plate PV technologies, with architectures that have the potential to provide the lowest cost of energy in locations with high direct normal irradiance (DNI). A disadvantage is their inability to effectively use diffuse sunlight, thereby constraining widespread geographic deployment and limiting performance even under the most favorable DNI conditions. This study introduces a module design that integrates capabilities in flat-plate PV directly with the most sophisticated CPV technologies, for capture of both direct and diffuse sunlight, thereby achieving efficiency in PV conversion of the global solar radiation. Specific examples of this scheme exploit commodity silicon (Si) cells integrated with two different CPV module designs, where they capture light that is not efficiently directed by the concentrator optics onto large-scale arrays of miniature multijunction (MJ) solar cells that use advanced III-V semiconductor technologies. In this CPV+ scheme (“+” denotes the addition of diffuse collector), the Si and MJ cells operate independently on indirect and direct solar radiation, respectively. On-sun experimental studies of CPV+ modules at latitudes of 35.9886° N (Durham, NC), 40.1125° N (Bondville, IL), and 38.9072° N (Washington, DC) show improvements in absolute module efficiencies of between 1.02% and 8.45% over values obtained using otherwise similar CPV modules, depending on weather conditions. These concepts have the potential to expand the geographic reach and improve the cost-effectiveness of the highest efficiency forms of PV power generation.

Concentrator photovoltaic module architectures with capabilities for capture and conversion of full global solar radiation.

PubMed

Lee, Kyu-Tae; Yao, Yuan; He, Junwen; Fisher, Brent; Sheng, Xing; Lumb, Matthew; Xu, Lu; Anderson, Mikayla A; Scheiman, David; Han, Seungyong; Kang, Yongseon; Gumus, Abdurrahman; Bahabry, Rabab R; Lee, Jung Woo; Paik, Ungyu; Bronstein, Noah D; Alivisatos, A Paul; Meitl, Matthew; Burroughs, Scott; Hussain, Muhammad Mustafa; Lee, Jeong Chul; Nuzzo, Ralph G; Rogers, John A

2016-12-20

Emerging classes of concentrator photovoltaic (CPV) modules reach efficiencies that are far greater than those of even the highest performance flat-plate PV technologies, with architectures that have the potential to provide the lowest cost of energy in locations with high direct normal irradiance (DNI). A disadvantage is their inability to effectively use diffuse sunlight, thereby constraining widespread geographic deployment and limiting performance even under the most favorable DNI conditions. This study introduces a module design that integrates capabilities in flat-plate PV directly with the most sophisticated CPV technologies, for capture of both direct and diffuse sunlight, thereby achieving efficiency in PV conversion of the global solar radiation. Specific examples of this scheme exploit commodity silicon (Si) cells integrated with two different CPV module designs, where they capture light that is not efficiently directed by the concentrator optics onto large-scale arrays of miniature multijunction (MJ) solar cells that use advanced III-V semiconductor technologies. In this CPV + scheme ("+" denotes the addition of diffuse collector), the Si and MJ cells operate independently on indirect and direct solar radiation, respectively. On-sun experimental studies of CPV + modules at latitudes of 35.9886° N (Durham, NC), 40.1125° N (Bondville, IL), and 38.9072° N (Washington, DC) show improvements in absolute module efficiencies of between 1.02% and 8.45% over values obtained using otherwise similar CPV modules, depending on weather conditions. These concepts have the potential to expand the geographic reach and improve the cost-effectiveness of the highest efficiency forms of PV power generation.

Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells

NASA Technical Reports Server (NTRS)

Jain, Raj K.

2005-01-01

Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell approaches. The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of indium phosphide (InP) window layers for lattice-matched In(0.53)Ga(0.47)As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells. The modeled quantum efficiency results show a significant improvement in the blue region with the InP window. The bare InGaAs solar cell performance suffers due to high surface recombination velocity (10(exp 7) cm/s). The large band discontinuity at the InP/InGaAs heterojunction offers a great potential barrier to minority carriers. The calculated results demonstrate that the InP window layer effectively passivates the solar cell front surface, hence resulting in reduced surface recombination and therefore, significantly improving the performance of the InGaAs solar cell.

Amorphous silicon research. Final technical progress report, 1 August 1994--28 February 1998

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guha, S

1998-05-01

This report describes the status and accomplishments of work performed under this subcontract by United Solar Systems. United Solar researchers explored several new deposition regimes/conditions to investigate their effect on material/device performance. To facilitate optimum ion bombardment during growth, a large parameter space involving chamber pressure, rf power, and hydrogen dilution were investigated. United Solar carried out a series of experiments using discharge modulation at various pulsed-plasma intervals to study the effect of Si-particle incorporation on solar cell performance. Hydrogen dilution during deposition is found to improve both the initial and stable performance of a-Si and a-SiGe alloy cells. Researchersmore » conducted a series of temperature-ramping experiments on samples prepared with high and low hydrogen dilutions to study the effect of hydrogen effusion on solar cell performance. Using an internal photoemission method, the electrical bandgap of a microcrystalline p layer used in high-efficiency solar cells was measured to be 1.6 eV. New measurement techniques were developed to evaluate the interface and bulk contributions of losses to solar cell performance. Researchers replaced hydrogen with deuterium and found deuterated amorphous silicon alloy solar cells exhibit reduced light-induced degradation. The incorporation of a microcrystalline n layer in a multijunction cell is seen to improve cell performance. United Solar achieved a world-record single-junction a-Si alloy stable cell efficiency of 9.2% with an active area of 0.25 cm{sup 2} grown with high hydrogen dilution. They also achieved a world-record triple-junction, stable, active-area cell efficiency of 13.0% with an active area of 0.25 cm{sup 2}.« less

Water Splitting with Series-Connected Polymer Solar Cells.

PubMed

Esiner, Serkan; van Eersel, Harm; van Pruissen, Gijs W P; Turbiez, Mathieu; Wienk, Martijn M; Janssen, René A J

2016-10-12

We investigate light-driven electrochemical water splitting with series-connected polymer solar cells using a combined experimental and modeling approach. The expected maximum solar-to-hydrogen conversion efficiency (η STH ) for light-driven water splitting is modeled for two, three, and four series-connected polymer solar cells. In the modeling, we assume an electrochemical water splitting potential of 1.50 V and a polymer solar cell for which the external quantum efficiency and fill factor are both 0.65. The minimum photon energy loss (E loss ), defined as the energy difference between the optical band gap (E g ) and the open-circuit voltage (V oc ), is set to 0.8 eV, which we consider a realistic value for polymer solar cells. Within these approximations, two series-connected single junction cells with E g = 1.73 eV or three series-connected cells with E g = 1.44 eV are both expected to give an η STH of 6.9%. For four series-connected cells, the maximum η STH is slightly less at 6.2% at an optimal E g = 1.33 eV. Water splitting was performed with series-connected polymer solar cells using polymers with different band gaps. PTPTIBDT-OD (E g = 1.89 eV), PTB7-Th (E g = 1.56 eV), and PDPP5T-2 (E g = 1.44 eV) were blended with [70]PCBM as absorber layer for two, three, and four series-connected configurations, respectively, and provide η STH values of 4.1, 6.1, and 4.9% when using a retroreflective foil on top of the cell to enhance light absorption. The reasons for deviations with experiments are analyzed and found to be due to differences in E g and E loss . Light-driven electrochemical water splitting was also modeled for multijunction polymer solar cells with vertically stacked photoactive layers. Under identical assumptions, an η STH of 10.0% is predicted for multijunction cells.

Design and Development of the Space Technology 5 (ST5) Solar Arrays

NASA Technical Reports Server (NTRS)

Lyons, John; Fatemi, Navid; Gamica, Robert; Sharma, Surya; Senft, Donna; Maybery, Clay

2005-01-01

The National Aeronautics and Space Administration's (NASA's) Space Technology 5 (ST5) is designed to flight-test the concept of miniaturized 'small size" satellites and innovative technologies in Earth's magnetosphere. Three satellites will map the intensity and direction of the magnetic fields within the inner magnetosphere. Due to the small area available for the solar arrays, and to meet the mission power requirements, very high-efficiency multijunction solar cells were selected to power the spacecraft built by NASA Goddard Space Flight Center (GSFC). This was done in partnership with the Air Force Research Lab (AFRL) through the Dual-Use Science and Technology (DUS&T) program. Emcore's InGaP/lnGaAs/Ge Advanced triple-junction (ATJ) solar cells, exhibiting an average air mass zero (AMO) efficiency of 28.0% (one-sun, 28 C), were used to populate the arrays. Each spacecraft employs 8 identical solar panels (total area of about 0.3 square meters), with 15 large-area solar cells per panel. The requirement for power is to support on-orbit average load of 13.5 W at 8.4 V, with plus or minus 5% off pointing. The details of the solar array design, development and qualification considerations, as well as ground electrical performance & shadowing analysis results are presented.

Solar array experiments on the Sphinx satellite

NASA Technical Reports Server (NTRS)

Stevens, N. J.

1973-01-01

The Space Plasma, High Voltage Interaction Experiment (SPHINX) is the name given to an auxiliary payload satellite scheduled to be launched in January 1974. The principal experiments carried on this satellite are specifically designed to obtain the engineering data on the interaction of high voltage systems with the space plasma. The classes of experiments are solar array segments, insulators, insulators with pin holes and conductors. The satellite is also carrying experiments to obtain flight data on three new solar array configurations; the edge illuminated-multijunction cells, the Teflon encased cells and the violet cells.

Solar array experiments on the SPHINX satellite. [Space Plasma High voltage INteraction eXperiment satellite

NASA Technical Reports Server (NTRS)

Stevens, N. J.

1974-01-01

The Space Plasma, High Voltage Interaction Experiment (SPHINX) is the name given to an auxiliary payload satellite scheduled to be launched in January 1974. The principal experiments carried on this satellite are specifically designed to obtain the engineering data on the interaction of high voltage systems with the space plasma. The classes of experiments are solar array segments, insulators, insulators with pin holes and conductors. The satellite is also carrying experiments to obtain flight data on three new solar array configurations: the edge illuminated-multijunction cells, the teflon encased cells, and the violet cells.

Optical Frequency Optimization of a High Intensity Laser Power Beaming System Utilizing VMJ Photovoltaic Cells

NASA Technical Reports Server (NTRS)

Raible, Daniel E.; Dinca, Dragos; Nayfeh, Taysir H.

2012-01-01

An effective form of wireless power transmission (WPT) has been developed to enable extended mission durations, increased coverage and added capabilities for both space and terrestrial applications that may benefit from optically delivered electrical energy. The high intensity laser power beaming (HILPB) system enables long range optical 'refueling" of electric platforms such as micro unmanned aerial vehicles (MUAV), airships, robotic exploration missions and spacecraft platforms. To further advance the HILPB technology, the focus of this investigation is to determine the optimal laser wavelength to be used with the HILPB receiver, which utilizes vertical multi-junction (VMJ) photovoltaic cells. Frequency optimization of the laser system is necessary in order to maximize the conversion efficiency at continuous high intensities, and thus increase the delivered power density of the HILPB system. Initial spectral characterizations of the device performed at the NASA Glenn Research Center (GRC) indicate the approximate range of peak optical-to-electrical conversion efficiencies, but these data sets represent transient conditions under lower levels of illumination. Extending these results to high levels of steady state illumination, with attention given to the compatibility of available commercial off-the-shelf semiconductor laser sources and atmospheric transmission constraints is the primary focus of this paper. Experimental hardware results utilizing high power continuous wave (CW) semiconductor lasers at four different operational frequencies near the indicated band gap of the photovoltaic VMJ cells are presented and discussed. In addition, the highest receiver power density achieved to date is demonstrated using a single photovoltaic VMJ cell, which provided an exceptionally high electrical output of 13.6 W/sq cm at an optical-to-electrical conversion efficiency of 24 percent. These results are very promising and scalable, as a potential 1.0 sq m HILPB receiver of similar construction would be able to generate 136 kW of electrical power under similar conditions.

Material challenges for solar cells in the twenty-first century: directions in emerging technologies.

PubMed

Almosni, Samy; Delamarre, Amaury; Jehl, Zacharie; Suchet, Daniel; Cojocaru, Ludmila; Giteau, Maxime; Behaghel, Benoit; Julian, Anatole; Ibrahim, Camille; Tatry, Léa; Wang, Haibin; Kubo, Takaya; Uchida, Satoshi; Segawa, Hiroshi; Miyashita, Naoya; Tamaki, Ryo; Shoji, Yasushi; Yoshida, Katsuhisa; Ahsan, Nazmul; Watanabe, Kentaro; Inoue, Tomoyuki; Sugiyama, Masakazu; Nakano, Yoshiaki; Hamamura, Tomofumi; Toupance, Thierry; Olivier, Céline; Chambon, Sylvain; Vignau, Laurence; Geffroy, Camille; Cloutet, Eric; Hadziioannou, Georges; Cavassilas, Nicolas; Rale, Pierre; Cattoni, Andrea; Collin, Stéphane; Gibelli, François; Paire, Myriam; Lombez, Laurent; Aureau, Damien; Bouttemy, Muriel; Etcheberry, Arnaud; Okada, Yoshitaka; Guillemoles, Jean-François

2018-01-01

Photovoltaic generation has stepped up within the last decade from outsider status to one of the important contributors of the ongoing energy transition, with about 1.7% of world electricity provided by solar cells. Progress in materials and production processes has played an important part in this development. Yet, there are many challenges before photovoltaics could provide clean, abundant, and cheap energy. Here, we review this research direction, with a focus on the results obtained within a Japan-French cooperation program, NextPV, working on promising solar cell technologies. The cooperation was focused on efficient photovoltaic devices, such as multijunction, ultrathin, intermediate band, and hot-carrier solar cells, and on printable solar cell materials such as colloidal quantum dots.

Modeling and analysis of cascade solar cells

NASA Technical Reports Server (NTRS)

Ho, F. D.

1986-01-01

A brief review is given of the present status of the development of cascade solar cells. It is known that photovoltaic efficiencies can be improved through this development. The designs and calculations of the multijunction cells, however, are quite complicated. The main goal is to find a method which is a compromise between accuracy and simplicity for modeling a cascade solar cell. Three approaches are presently under way, among them (1) equivalent circuit approach, (2) numerical approach, and (3) analytical approach. Here, the first and the second approaches are discussed. The equivalent circuit approach using SPICE (Simulation Program, Integrated Circuit Emphasis) to the cascade cells and the cascade-cell array is highlighted. The methods of extracting parameters for modeling are discussed.

Multi-crystalline II-VI based multijunction solar cells and modules

DOEpatents

Hardin, Brian E.; Connor, Stephen T.; Groves, James R.; Peters, Craig H.

2015-06-30

Multi-crystalline group II-VI solar cells and methods for fabrication of same are disclosed herein. A multi-crystalline group II-VI solar cell includes a first photovoltaic sub-cell comprising silicon, a tunnel junction, and a multi-crystalline second photovoltaic sub-cell. A plurality of the multi-crystalline group II-VI solar cells can be interconnected to form low cost, high throughput flat panel, low light concentration, and/or medium light concentration photovoltaic modules or devices.

Multijunction photovoltaic device and method of manufacture

DOEpatents

Arya, Rejeewa R.; Catalano, Anthony W.; Bennett, Murray

1995-04-04

A multijunction photovoltaic device includes first, second, and third amorphous silicon p-i-n photovoltaic cells in a stacked arrangement. The intrinsic layers of the second and third cells are formed of a-SiGe alloys with differing ratios of Ge such that the bandgap of the intrinsic layers respectively decrease from the first uppermost cell to the third lowermost cell. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one of the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers.

Development of high-bandgap AlGaInP solar cells grown by organometallic vapor-phase epitaxy

DOE PAGES

Perl, Emmett E.; Simon, John; Geisz, John F.; ...

2016-03-29

AlGaInP solar cells with bandgaps between 1.9 and 2.2 eV are investigated for use in next-generation multijunction photovoltaic devices. This quaternary alloy is of great importance to the development of III-V solar cells with five or more junctions and for cells optimized for operation at elevated temperatures because of the high bandgaps required in these designs. In this work, we explore the conditions for the organometallic vapor-phase epitaxy growth of AlGaInP and study their effects on cell performance. Initial efforts focused on developing ~2.0-eV AlGaInP solar cells with a nominal aluminum composition of 12%. Under the direct spectrum at 1000more » W/m 2 (AM1.5D), the best of these samples had an open-circuit voltage of 1.59 V, a bandgap-voltage offset of 440 mV, a fill factor of 88.0%, and an efficiency of 14.8%. We then varied the aluminum composition of the alloy from 0% to 24% and were able to tune the bandgap of the AlGaInP layers from ~1.9 to ~2.2 eV. Furthermore, while the samples with a higher aluminum composition exhibited a reduced quantum efficiency and increased bandgap-voltage offset, the bandgap-voltage offset remained at 500 mV or less, up to a bandgap of ~2.1 eV.« less

Growth and Defect Characterization of Quantum Dot-Embedded III-V Semiconductors for Advanced Space Photovoltaics

DTIC Science & Technology

2014-05-15

important performance degradation mechanism, and provides a target for future comparisons with MBE-grown QD/host systems . 15. SUBJECT TERMS solar ...challenge for every photovoltaics ( PV ) technology. For space solar cell technologies, the III-V multijunction (MJ) concept has been the leading approach to...gap composition, without the need for high Al concentrations, is nonetheless available in the GaAsP alloy system at GaAs0.52P0.48, which is

Will we exceed 50% efficiency in photovoltaics?

NASA Astrophysics Data System (ADS)

Luque, Antonio

2011-08-01

Solar energy is the most abundant and reliable source of energy we have to provide for the multi-terawatt challenge we are facing. Although huge, this resource is relatively dispersed. High conversion efficiency is probably necessary for cost effectiveness. Solar cell efficiencies above 40% have been achieved with multijunction (MJ) solar cells. These achievements are here described. Possible paths for improvement are hinted at including third generation photovoltaics concepts. It is concluded that it is very likely that the target of 50% will eventually be achieved. This high efficiency requires operating under concentrated sunlight, partly because concentration helps increase the efficiency but mainly because the cost of the sophisticated cells needed can only be paid by extracting as much electric power form each cell as possible. The optical challenges associated with the concentrator optics and the tools for overcoming them, in particular non-imaging optics, are briefly discussed and the results and trends are described. It is probable that optical efficiency over 90% will be possible in the future. This would lead to a module efficiency of 45%. The manufacturing of a concentrator has to be addressed at three levels of integration: module, array, and photovoltaic (PV) subfield. The PV plant as a whole is very similar than a flat module PV plant with two-axes tracking. At the module level, the development of tools for easy manufacturing and quality control is an important topic. Furthermore, they can accommodate in different position cells with different spectral sensitivities so complementing the effort in manufacturing MJ cells. At the array level, a proper definition of the nameplate watts, since the diffuse light is not used, is under discussion. The cost of installation of arrays in the field can be very much reduced by self aligning tracking control strategies. At the subfield level, aspects such as the self shadowing of arrays causes the CPV subfields to be sparsely packed leading to a ground efficiency, in the range of 10%, that in some cases will be below that of fixed modules of much lower cell efficiency. All this taken into account, High Concentration PV (HCPV) has the opportunity to become the cheapest of the PV technologies and beat the prevalent electricity generation technologies. Of course the way will be paved with challenges, and success is not guaranteed.

Structural dependences of localization and recombination of photogenerated carriers in the top GaInP Subcells of GaInP/GaAs double-junction tandem solar cells.

PubMed

Deng, Zhuo; Ning, Jiqiang; Su, Zhicheng; Xu, Shijie; Xing, Zheng; Wang, Rongxin; Lu, Shulong; Dong, Jianrong; Zhang, Baoshun; Yang, Hui

2015-01-14

In high-efficiency GaInP/GaAs double-junction tandem solar cells, GaInP layers play a central role in determining the performance of the solar cells. Therefore, gaining a deeper understanding of the optoelectronic processes in GaInP layers is crucial for improving the energy conversion efficiency of GaInP-based photovoltaic devices. In this work, we firmly show strong dependences of localization and recombination of photogenerated carriers in the top GaInP subcells in the GaInP/GaAs double-junction tandem solar cells on the substrate misorientation angle with excitation intensity- and temperature-dependent photoluminescence (PL). The entire solar cell structures including GaInP layers were grown with metalorganic chemical vapor deposition on GaAs substrates with misorientation angles of 2° (denoted as Sample 2°) and 7° (Sample 7°) off (100) toward (111)B. The PL spectral features of the two top GaInP subcells, as well as their excitation-power and temperature dependences exhibit remarkable variation on the misorientation angle. In Sample 2°, the dominant localization mechanism and luminescence channels are due to the energy potential minima caused by highly ordered atomic domains; In Sample 7°, the main localization and radiative recombination of photogenerated carriers occur in the atomically disordered regions. Our results reveal a more precise picture on the localization and recombination mechanisms of photogenerated carriers in the top GaInP subcells, which could be the crucial factors in controlling the optoelectronic efficiency of the GaInP-based multijunction photovoltaic devices.

Modular High-Energy Systems for Solar Power Satellites

NASA Technical Reports Server (NTRS)

Howell, Joe T.; Carrington, Connie K.; Marzwell, Neville I.; Mankins, John C.

2006-01-01

Modular High-Energy Systems are Stepping Stones to provide capabilities for energy-rich infrastructure located in space to support a variety of exploration scenarios as well as provide a supplemental source of energy during peak demands to ground grid systems. Abundant renewable energy at lunar or other locations could support propellant production and storage in refueling scenarios that enable affordable exploration. Renewable energy platforms in geosynchronous Earth orbits can collect and transmit power to satellites, or to Earth-surface locations. Energy-rich space technologies also enable the use of electric-powered propulsion systems that could efficiently deliver cargo and exploration facilities to remote locations. A first step to an energy-rich space infrastructure is a 100-kWe class solar-powered platform in Earth orbit. The platform would utilize advanced technologies in solar power collection and generation, power management and distribution, thermal management, electric propulsion, wireless avionics, autonomous in space rendezvous and docking, servicing, and robotic assembly. It would also provide an energy-rich free-flying platform to demonstrate in space a portfolio of technology flight experiments. This paper summary a preliminary design concept for a 100-kWe solar-powered satellite system to demonstrate in-flight a variety of advanced technologies, each as a separate payload. These technologies include, but are not limited to state-of-the-art solar concentrators, highly efficient multi-junction solar cells, integrated thermal management on the arrays, and innovative deployable structure design and packaging to enable the 100-kW satellite feasible to launch on one existing launch vehicle. Higher voltage arrays and power distribution systems (PDS) reduce or eliminate the need for massive power converters, and could enable direct-drive of high-voltage solar electric thrusters.

Material challenges for solar cells in the twenty-first century: directions in emerging technologies

PubMed Central

Delamarre, Amaury; Jehl, Zacharie; Suchet, Daniel; Cojocaru, Ludmila; Giteau, Maxime; Behaghel, Benoit; Julian, Anatole; Ibrahim, Camille; Tatry, Léa; Wang, Haibin; Kubo, Takaya; Uchida, Satoshi; Segawa, Hiroshi; Miyashita, Naoya; Tamaki, Ryo; Shoji, Yasushi; Yoshida, Katsuhisa; Ahsan, Nazmul; Watanabe, Kentaro; Inoue, Tomoyuki; Sugiyama, Masakazu; Nakano, Yoshiaki; Hamamura, Tomofumi; Toupance, Thierry; Olivier, Céline; Chambon, Sylvain; Vignau, Laurence; Geffroy, Camille; Cloutet, Eric; Hadziioannou, Georges; Cavassilas, Nicolas; Rale, Pierre; Cattoni, Andrea; Collin, Stéphane; Gibelli, François; Paire, Myriam; Lombez, Laurent; Aureau, Damien; Bouttemy, Muriel; Etcheberry, Arnaud; Okada, Yoshitaka

2018-01-01

Abstract Photovoltaic generation has stepped up within the last decade from outsider status to one of the important contributors of the ongoing energy transition, with about 1.7% of world electricity provided by solar cells. Progress in materials and production processes has played an important part in this development. Yet, there are many challenges before photovoltaics could provide clean, abundant, and cheap energy. Here, we review this research direction, with a focus on the results obtained within a Japan–French cooperation program, NextPV, working on promising solar cell technologies. The cooperation was focused on efficient photovoltaic devices, such as multijunction, ultrathin, intermediate band, and hot-carrier solar cells, and on printable solar cell materials such as colloidal quantum dots. PMID:29707072

Study of the Staebler-Wronski degradation effect in a-Si:H based p-i-n solar cell

NASA Technical Reports Server (NTRS)

Naseem, H. A.; Brown, W. D.; Ang, S. S.

1993-01-01

Conversion of solar energy into electricity using environmentally safe and clean photovoltaic methods to supplement the ever increasing energy needs has been a cherished goal of many scientists and engineers around the world. Photovoltaic solar cells on the other hand, have been the power source for satellites ever since their introduction in the early sixties. For widespread terrestrial applications, however, the cost of photovoltaic systems must be reduced considerably. Much progress has been made in the recent past towards developing economically viable terrestrial systems, and the future looks highly promising. Thin film solar cells offer cost reductions mainly from their low processing cost, low material cost, and choice of low cost substrates. These are also very attractive for space applications because of their high power densities (power produced per kilogram of solar cell pay load) and high radiation resistance. Amorphous silicon based solar cells are amongst the top candidates for economically viable terrestrial and space based power generation. Despite very low federal funding during the eighties, amorphous silicon solar cell efficiencies have continually been improved - from a low 3 percent to over 13 percent now. Further improvements have been made by the use of multi-junction tandem solar cells. Efficiencies close to 15 percent have been achieved in several labs. In order to be competitive with fossil fuel generated electricity, it is believed that module efficiency of 15 percent or cell efficiency of 20 percent is required. Thus, further improvements in cell performance is imperative. One major problem that was discovered almost 15 years ago in amorphous silicon devices is the well known Staebler-Wronski Effect. Efficiency of amorphous silicon solar cells was found to degrade upon exposure to sunlight. Until now their is no consensus among the scientists on the mechanism for this degradation. Efficiency may degrade anywhere from 10 percent to almost 50 percent within the first few months of operation. In order to improve solar cell efficiencies, it is clear that the cause or causes of such degradation must be found and the processing conditions altered to minimize the loss in efficiency. This project was initiated in 1987 to investigate a possible link between metallic impurities, in particular, Ag, and this degradation. Such a link was established by one of the NASA scientists for the light induced degradation of n+/p crystalline silicon solar cells.

Quantum-dot-in-perovskite solids.

PubMed

Ning, Zhijun; Gong, Xiwen; Comin, Riccardo; Walters, Grant; Fan, Fengjia; Voznyy, Oleksandr; Yassitepe, Emre; Buin, Andrei; Hoogland, Sjoerd; Sargent, Edward H

2015-07-16

Heteroepitaxy-atomically aligned growth of a crystalline film atop a different crystalline substrate-is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned 'dots-in-a-matrix' crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics.

Ultralightweight Fresnel Lens Solar Concentrators for Space Power

NASA Technical Reports Server (NTRS)

ONeill, M. J.; McDanal, A. J.

2000-01-01

The first phase of this project was completed in March 2000, and included the successful technology demonstration of a new ultralightweight photovoltaic concentrator array at the fully functional panel level. The new array is called the Stretched Lens Aurora (SLA) array, and uses deployable, flexible, thin-film silicone rubber Fresnel lenses to focus sunlight onto high efficiency multijunction solar cells, which are mounted to a composite radiator surface for waste heat dissipation. A prototype panel was delivered to NASA Marshall in March 2000, and comprised four side-by-side lenses focussing sunlight onto four side-by-side photovoltaic receivers. This prototype panel was tested by NASA Glenn prior to delivery to NASA Marshall. The best of the four lens/receiver modules achieved 27.4% efficiency at room temperature in the NASA Glenn solar simulator tests. This performance equates to 375 W/sq.m. areal power and 378 W/kg specific power at the fully functional panel level. We believe this to be the first space solar array of any kind to simulataneously meet the two long-standing NASA goals of 300 W/sq.m. and 300 W/kg at the functional panel level. Key results for the first phase of the program have been documented by ENTECH in a Draft Final Technical Report, which is presently being reviewed by NASA, and which should be published in the near future.

Computational Modeling | Photovoltaic Research | NREL

Science.gov Websites

performance of single- and multijunction cells and modules. We anticipate the upcoming completion of our next software package for a simplified electronic design of single- and multicrystalline silicon solar cells

Spectral binning for energy production calculations and multijunction solar cell design

DOE PAGES

Garcia, Iván; McMahon, William E.; Habte, Aron; ...

2017-09-14

Currently, most solar cells are designed for and evaluated under standard spectra intended to represent typical spectral conditions. However, no single spectrum can capture the spectral variability needed for annual energy production (AEP) calculations, and this shortcoming becomes more significant for series-connected multijunction cells as the number of junctions increases. For this reason, AEP calculations are often performed on very detailed yearlong sets of data, but these pose 2 inherent challenges: (1) These data sets comprise thousands of data points, which appear as a scattered cloud of data when plotted against typical parameters and are hence cumbersome to classify andmore » compare, and (2) large sets of spectra bring with them a corresponding increase in computation or measurement time. Here, we show how a large spectral set can be reduced to just a few 'proxy' spectra, which still retain the spectral variability information needed for AEP design and evaluation. The basic 'spectral binning' methods should be extensible to a variety of multijunction device architectures. In this study, as a demonstration, the AEP of a 4-junction device is computed for both a full set of spectra and a reduced proxy set, and the results show excellent agreement for as few as 3 proxy spectra. This enables much faster (and thereby more detailed) calculations and indoor measurements and provides a manageable way to parameterize a spectral set, essentially creating a 'spectral fingerprint,' which should facilitate the understanding and comparison of different sites.« less

Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Musalinov, S. B.; Anzulevich, A. P.; Bychkov, I. V.

2017-01-15

The results of simulation by the transfer-matrix method of TiO{sub 2}/SiO{sub 2} double-layer and TiO{sub 2}/Si{sub 3}N{sub 4}/SiO{sub 2} triple-layer antireflection coatings for multijunction InGaP/GaAs/Ge heterostructure solar cells are presented. The TiO{sub 2}/SiO{sub 2} double-layer antireflection coating is experimentally developed and optimized. The experimental spectral dependences of the external quantum yield of the InGaP/GaAs/Ge heterostructure solar cell and optical characteristics of antireflection coatings, obtained in the simulation, are used to determine the photogenerated current densities of each subcell in the InGaP/GaAs/Ge solar cell under AM1.5D irradiation conditions (1000 W/m{sup 2}) and for the case of zero reflection loss. It ismore » shown in the simulation that the optimized TiO{sub 2}/Si{sub 3}N{sub 4}/SiO{sub 2} triple-layer antireflection coating provides a 2.3 mA/cm{sup 2} gain in the photocurrent density for the Ge subcell under AM1.5D conditions in comparison with the TiO{sub 2}/SiO{sub 2} double-layer antireflection coating under consideration. This thereby provides an increase in the fill factor of the current–voltage curve and in the output electric power of the multijunction solar cell.« less

Spectral binning for energy production calculations and multijunction solar cell design

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garcia, Iván; McMahon, William E.; Habte, Aron

Currently, most solar cells are designed for and evaluated under standard spectra intended to represent typical spectral conditions. However, no single spectrum can capture the spectral variability needed for annual energy production (AEP) calculations, and this shortcoming becomes more significant for series-connected multijunction cells as the number of junctions increases. For this reason, AEP calculations are often performed on very detailed yearlong sets of data, but these pose 2 inherent challenges: (1) These data sets comprise thousands of data points, which appear as a scattered cloud of data when plotted against typical parameters and are hence cumbersome to classify andmore » compare, and (2) large sets of spectra bring with them a corresponding increase in computation or measurement time. Here, we show how a large spectral set can be reduced to just a few 'proxy' spectra, which still retain the spectral variability information needed for AEP design and evaluation. The basic 'spectral binning' methods should be extensible to a variety of multijunction device architectures. In this study, as a demonstration, the AEP of a 4-junction device is computed for both a full set of spectra and a reduced proxy set, and the results show excellent agreement for as few as 3 proxy spectra. This enables much faster (and thereby more detailed) calculations and indoor measurements and provides a manageable way to parameterize a spectral set, essentially creating a 'spectral fingerprint,' which should facilitate the understanding and comparison of different sites.« less

GaInNAs Structures Grown by MBE for High-Efficiency Solar Cells: Final Report; 25 June 1999--24 August 2002

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tu, C. W.

The focus of this work is to improve the quality of GaInNAs by advanced thin-film growth techniques, such as digital-alloy growth techniques and migration-enhanced epitaxy (MEE). The other focus is to further investigate the properties of such materials, which are potentially beneficial for high-efficiency, multijunction solar cells. 400-nm-thick strain-compensated Ga0.92In0.08As/GaN0.03As0.97 short-period superlattices (SPSLs) are grown lattice-matched to GaAs substrates. The photoluminescence (PL) intensity of digital alloys is 3 times higher than that of random alloys at room temperature, and the improvement is even greater at low temperature, by a factor of about 12. The room-temperature PL intensity of the GaInNAsmore » quantum well grown by the strained InAs/GaN0.023As SPSL growth mode is higher by a factor 5 as compare to the continuous growth mode. The SPSL growth method allows for independent adjustment of the In-to-Ga ratio without group III competition. MEE reduces the low-energy tail of PL, and PL peaks become more intense and sharper. The twin peaks photoluminescence of GaNAs grown on GaAs was observed at room temperature. The peaks splitting increase with increase in nitrogen alloy content. The strain-induced splitting of light-hole and heavy-hole bands of tensile-strained GaNAs is proposed as an explanation of such behavior.« less

2D matrix engineering for homogeneous quantum dot coupling in photovoltaic solids

NASA Astrophysics Data System (ADS)

Xu, Jixian; Voznyy, Oleksandr; Liu, Mengxia; Kirmani, Ahmad R.; Walters, Grant; Munir, Rahim; Abdelsamie, Maged; Proppe, Andrew H.; Sarkar, Amrita; García de Arquer, F. Pelayo; Wei, Mingyang; Sun, Bin; Liu, Min; Ouellette, Olivier; Quintero-Bermudez, Rafael; Li, Jie; Fan, James; Quan, Lina; Todorovic, Petar; Tan, Hairen; Hoogland, Sjoerd; Kelley, Shana O.; Stefik, Morgan; Amassian, Aram; Sargent, Edward H.

2018-06-01

Colloidal quantum dots (CQDs) are promising photovoltaic (PV) materials because of their widely tunable absorption spectrum controlled by nanocrystal size1,2. Their bandgap tunability allows not only the optimization of single-junction cells, but also the fabrication of multijunction cells that complement perovskites and silicon3. Advances in surface passivation2,4-7, combined with advances in device structures8, have contributed to certified power conversion efficiencies (PCEs) that rose to 11% in 20169. Further gains in performance are available if the thickness of the devices can be increased to maximize the light harvesting at a high fill factor (FF). However, at present the active layer thickness is limited to 300 nm by the concomitant photocarrier diffusion length. To date, CQD devices thicker than this typically exhibit decreases in short-circuit current (JSC) and open-circuit voltage (VOC), as seen in previous reports3,9-11. Here, we report a matrix engineering strategy for CQD solids that significantly enhances the photocarrier diffusion length. We find that a hybrid inorganic-amine coordinating complex enables us to generate a high-quality two-dimensionally (2D) confined inorganic matrix that programmes internanoparticle spacing at the atomic scale. This strategy enables the reduction of structural and energetic disorder in the solid and concurrent improvements in the CQD packing density and uniformity. Consequently, planar devices with a nearly doubled active layer thicknesses ( 600 nm) and record values of JSC (32 mA cm-2) are fabricated. The VOC improved as the current was increased. We demonstrate CQD solar cells with a certified record efficiency of 12%.

The free form XR photovoltaic concentrator: a high performance SMS3D design

NASA Astrophysics Data System (ADS)

Cvetkovic, Aleksandra; Hernandez, Maikel; Benítez, Pablo; Miñano, Juan C.; Schwartz, Joel; Plesniak, Adam; Jones, Russ; Whelan, David

2008-08-01

A novel photovoltaic concentrator is presented. The goal is to achieve high concentration design with high efficiency and high acceptance angle that in the same time is compact and convenient for thermal and mechanical management. This photovoltaic system is based on 1 cm2 multi-junction tandem solar cells and an XR concentrator. The XR concentrator in this system is an SMS 3D design formed by one reflective (X) and one refractive (R) free-form surfaces (i.e., without rotational or linear symmetry) and has been chosen for its excellent aspect ratio and for its ability to perform near the thermodynamic limit. It is a mirror-lens device that has no shadowing elements and has square entry aperture (the whole system aperture area is used for collecting light). This large acceptance angle relaxes the manufacturing tolerances of all the optical and mechanical components of the system included the concentrator itself and is one of the keys to get a cost competitive photovoltaic generator. For the geometrical concentration of 1000x the simulation results show the acceptance angle of +/-1.8 deg. The irradiance distribution on the cell is achieved with ultra-short homogenizing prism, whose size is optimised to keep the maximum values under the ones that the cell can accept. The application of the XR optics to high-concentration is being developed in a consortium leaded by The Boeing Company, which has been awarded a project by US DOE in the framework of the Solar America Initiative.

Single and multijunction silicon based thin film solar cells on a flexible substrate with absorber layers made by hot-wire CVD

NASA Astrophysics Data System (ADS)

Li, Hongbo

2007-09-01

With the worldwide growing concern about reliable energy supply and the environmental problems of fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic systems, can play a major role in the urgently needed energy transition in electricity production. Solar cells based on thin film silicon and its alloys are a promising candidate that is capable of fulfilling the fast increasing demand of a reliable solar cell supply. The conventional method to deposit silicon thin films is based on plasma enhanced chemical vapour deposition (PECVD) techniques, which have the disadvantage of increasing film inhomogeneity at a high deposition rate when scaling up for the industrial production. In this thesis, we study the possibility of making high efficiency single and multijunction thin film silicon solar cells with the so-called hot-wire CVD technique, in which no strong electromagnetic field is involved in the deposition. Therefore, the up-scaling for industrial production is straightforward. We report and discuss our findings on the correlation of substrate surface rms roughness and the main output parameter of a solar cell, the open circuit voltage Voc of c-Si:H n i p cells. By considering all the possible reasons that could influence the Voc of such cells, we conclude that the near linear correlation of Voc and substrate surface rms roughness is the result the two most probable reasons: the unintentional doping through the cracks originated near the valleys of the substrate surface due to the in-diffusion of impurities, and the high density electrical defects formed by the collision of columnar silicon structures. Both of them relate to the morphology of substrate surface. Therefore, to have the best cell performance on a rough substrate surface, a good control on the substrate surface morphology is necessary. Another issue influencing the performance of c-Si:H solar cells is the change in layer crystallinity during the growth of the c-Si:H i-layer. For PECVD deposited cells, it is often found that the layer crystallinity is enhanced with increasing film thickness. We found for Hot-wire deposited cells, however, the opposite development in material structure: the material becomes amorphous near the end of the deposition. This results in a deterioration of cell performance. We therefore introduce a so-called H2 reverse profiling technique, in which H2 is increased during the c-Si:H i-layer deposition. With this technique, a cell with an efficiency of 8.5% has been reached, which is in line with the best reported PECVD cells deposited on the same type of substrate. In the literature, carrier transport in c-Si:H cells has been a topic for debate. In this thesis, we present our finding of photogating effect on the spectral response of c-Si:H solar cells. When measured under coloured bias light, the apparent quantum efficiency value of a c-Si:H cell can be largely enhanced. This phenomenon is a typical result of trapping induced field modification in the bulk of a drift type solar cell. The discovery of this phenomenon has experimentally proved that field-driven transport to a large extend exist in a c-Si:H solar cell.

Multijunction InGaAs thermophotovoltaic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fatemi, N.S.; Jenkins, P.P.; Weizer, V.G.

1998-12-31

A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications. The MIM consists of many individual InGaAs cells series-connected on a single semi-insulating (S.I.) InP substrate. An infrared (IR) back surface reflector (BSR), placed on the rear surface of the substrate, returns the unused portion of the TPV radiator output spectrum back to the radiator for recuperation, thereby providing for high system efficiencies. MIMs were fabricated with an active area of 0.9 {times} 1 cm, and with 15 cells monolithically connected in series. Both lattice-matched and lattice-mismatched InGaAs/InP devices were fabricated, with bandgaps of 0.74 and 0.55more » eV, respectively. The 0.74 eV MIMs demonstrated an open-circuit voltage (Voc) of 6.16 V and a fill factor of 74.2% at a short-circuit current (Jsc) of 0.84 A/cm{sup 2}, under flashlamp testing. The 0.55 eV MIMs demonstrated a Voc of 4.85 V and a fill factor of 57.8% at a Jsc of 3.87 A/cm{sup 2}. Electrical performance results for these MIMs are presented.« less

Thin-film amorphous silicon alloy research partnership. Phase 2, Annual technical progress report, 2 February 1996--1 February 1997

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guha, S

This is Phase II of a 3-phase, 3-year program. It is intended to expand, enhance, and accelerate knowledge and capabilities for developing high-performance, two-terminal multijunction amorphous Si alloy modules. We discuss investigations on back reflectors to improve cell performance and investigate uniformity in performance over a 1-sq.-ft. area. We present results on component cell performance, both in the initial and in the light-degraded states, deposited over a 1-sq.-ft. area. The uniformity in deposited is investigated by studying the performance of subcells deposited over the entire area. We also present results on the performance of triple- junction cells and modules. Themore » modules use grid-lines and encapsulants compatible with our production technology. We discuss the novel laser-processing technique that has bee developed at United Solar to improve energy-conversion efficiency and reduce manufacturing costs. We discuss in detail the optimization of the processing steps, and the performance of a laser-processed, triple- junction device of 12.6 cm{sup 2} area is presented. We also present experimental results on investigations of module reliability.« less

Optical studies of carriers’ vertical transport in the alternately-strained ZnS{sub 0.4}Se{sub 0.6}/CdSe superlattice

DOE Office of Scientific and Technical Information (OSTI.GOV)

Evropeytsev, E. A., E-mail: evropeitsev@beam.ioffe.ru; Sorokin, S. V.; Gronin, S. V.

2015-03-15

We present the results of theoretical modelling and experimental optical studies of the alternatively-strained CdSe/ZnS{sub y}Se{sub 1−y} (y = 0.4) superlattice (SL) with effective band-gap E{sub g}{sup eff} ∼ 2.580 eV and a thickness of ∼300 nm, which was grown by molecular-beam epitaxy on a GaAs substrate. The thicknesses and composition of the layers of the superlattice are determined on the basis of the SL minibands parameters calculated implying both full lattice matching of the SL as a whole to a GaAs substrate and high efficiency of photoexcited carriers transport along the growth axis. Photoluminescence studies of the transport propertiesmore » of the structure (including a superlattice with one enlarged quantum well) show that the characteristic time of the diffusion of charge carriers at 300 K is shorter than the times defined by recombination processes. Such superlattices seem to be promising for the formation of a wide-gap photoactive region in a multijunction solar cell, which includes both III–V and II–VI compounds.« less

Tailoring the optical characteristics of microsized InP nanoneedles directly grown on silicon.

PubMed

Li, Kun; Sun, Hao; Ren, Fan; Ng, Kar Wei; Tran, Thai-Truong D; Chen, Roger; Chang-Hasnain, Connie J

2014-01-08

Nanoscale self-assembly offers a pathway to realize heterogeneous integration of III-V materials on silicon. However, for III-V nanowires directly grown on silicon, dislocation-free single-crystal quality could only be attained below certain critical dimensions. We recently reported a new approach that overcomes this size constraint, demonstrating the growth of single-crystal InGaAs/GaAs and InP nanoneedles with the base diameters exceeding 1 μm. Here, we report distinct optical characteristics of InP nanoneedles which are varied from mostly zincblende, zincblende/wurtzite-mixed, to pure wurtzite crystalline phase. We achieved, for the first time, pure single-crystal wurtzite-phase InP nanoneedles grown on silicon with bandgaps of 80 meV larger than that of zincblende-phase InP. Being able to attain excellent material quality while scaling up in size promises outstanding device performance of these nanoneedles. At room temperature, a high internal quantum efficiency of 25% and optically pumped lasing are demonstrated for single nanoneedle as-grown on silicon substrate. Recombination dynamics proves the excellent surface quality of the InP nanoneedles, which paves the way toward achieving multijunction photovoltaic cells, long-wavelength heterostructure lasers, and advanced photonic integrated circuits.

Electro-architected porous platinum on metallic multijunction nanolayers to optimize their optical properties for infrared sensor application

NASA Astrophysics Data System (ADS)

Stanca, Sarmiza Elena; Hänschke, Frank; Zieger, Gabriel; Dellith, Jan; Dellith, Andrea; Ihring, Andreas; Belkner, Johannes; Meyer, Hans-Georg

2018-03-01

Tailoring the physicochemical properties of the metallic multijunction nanolayers is a prerequisite for the development of microelectronics. From this perspective, a desired lower reflectance of infrared radiation was achieved by an electrochemical deposition of porous platinum in nonaqueous media on silver mirror supported nickel-chrome and nickel-titanium metallic films with incremental decreasing thicknesses from 80-10 nm. The electro-assembled architectures were examined by means of scanning electron microscopy and Fourier transform infrared spectroscopy and it was observed that the layer and sublayer thicknesses and resistivities have a substantial effect upon the porous platinum morphology and its optical properties. It is here reported that the augmentation of the metallic layer electrical conductivity determines the electroformation of more compact platinum nanolayers. Moreover, the platinum black coating of metallic nanolayers causes a considerable decrease of the reflectance in the region from 1000-8000 cm-1.

Color tunable monolithic InGaN/GaN LED having a multi-junction structure.

PubMed

Kong, Duk-Jo; Kang, Chang-Mo; Lee, Jun-Yeob; Kim, James; Lee, Dong-Seon

2016-03-21

In this study, we have fabricated a blue-green color-tunable monolithic InGaN/GaN LED having a multi-junction structure with three terminals. The device has an n-p-n structure consisting of a green and a blue active region, i.e., an n-GaN / blue-MQW / p-GaN / green-MQW / n-GaN / Al₂O₃ structure with three terminals for independently controlling the two active regions. To realize this LED structure, a typical LED consisting of layers of n-GaN, blue MQW, and p-GaN is regrown on a conventional green LED by using a metal organic chemical vapor deposition (MOCVD) method. We explain detailed mechanisms of three operation modes which are the green, blue, and cyan mode. Moreover, we discuss optical properties of the device.

Effect of the electric field pattern on the generation of fast electrons in front of lower hybrid launchers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Valade, Laurent, E-mail: laurent.valade@cea.fr; Ekedahl, Annika; Colas, Laurent

2015-12-10

The effect of the detailed waveguide spectrum on the electron acceleration has been studied for the 3.7 GHz LHCD launchers in Tore Supra, i.e. the ITER-like passive-active multijunction (PAM) launcher and the fully-active-multijunction (FAM) launcher, using test electron modelling technique. The detailed launched antenna wave spectrum is used as input to the code that computes the dynamics of the electrons in the electric field. Comparison with the LHCD launchers in EAST, operating at 2.45 GHz and 4.6 GHz, has also been made. The simulations show that the PAM-design generates lower flux of fast electrons than FAM-launchers, this could be themore » consequence of the wider waveguide of PAM-launcher (14.65 mm for Tore-Supra) than FAM-launcher (8 mm for Tore-Supra)« less

Analysis of bias voltage dependent spectral response in Ga0.51In0.49P/Ga0.99In0.01As/Ge triple junction solar cell

NASA Astrophysics Data System (ADS)

Sogabe, Tomah; Ogura, Akio; Okada, Yoshitaka

2014-02-01

Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR -Vbias) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR -Vbias for Ga0.51In0.49P/Ga0.99In0.01As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR -Vbias measurements. The profile of SR-Vbias curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell.

The SMS3D photovoltaic concentrator

NASA Astrophysics Data System (ADS)

Cvetković, Aleksandra; Hernandez, Maikel; Benítez, Pablo; Miñano, Juan Carlos; Schwartz, Joel; Plesniak, Adam; Jones, Russ; Whelan, David

2008-08-01

A novel photovoltaic concentrator is presented. The goal is to achieve high concentration design with high efficiency and high acceptance angle that in the same time is compact and convenient for thermal and mechanical management [1]. This photovoltaic system is based on 1 cm2 multi-junction tandem solar cells and an XR concentrator. The XR concentrator in this system is an SMS 3D design formed by one reflective (X) and one refractive (R) free-form surfaces (i.e., without rotational or linear symmetry) and has been chosen for its excellent aspect ratio and for its ability to perform near the thermodynamic limit. It is a mirror-lens device that has no shadowing elements and has square entry aperture (the whole system aperture area is used for collecting light). This large acceptance angle relaxes the manufacturing tolerances of all the optical and mechanical components of the system included the concentrator itself and is one of the keys to get a cost competitive photovoltaic generator. For the geometrical concentration of 1000x the simulation results show the acceptance angle of +/-1.8 deg. The irradiance distribution on the cell is achieved with ultra-short homogenizing prism, whose size is optimised to keep the maximum values under the ones that the cell can accept. The application of the XR optics to high-concentration is being developed in a consortium leaded by The Boeing Company, which has been awarded a project by US DOE in the framework of the Solar America Initiative.

Earth abundant thin film technology for next generation photovoltaic modules

NASA Astrophysics Data System (ADS)

Alapatt, Githin Francis

With a cumulative generation capacity of over 100 GW, Photovoltaics (PV) technology is uniquely poised to become increasingly popular in the coming decades. Although, several breakthroughs have propelled PV technology, it accounts for only less than 1% of the energy produced worldwide. This aspect of the PV technology is primarily due to the somewhat high cost per watt, which is dependent on the efficiency of the PV cells as well as the cost of manufacturing and installing them. Currently, the efficiency of the PV conversion process is limited to about 25% for commercial terrestrial cells; improving this efficiency can increase the penetration of PV worldwide rapidly. A critical review of all possibilities pursued in the public domain reveals serious shortcomings and manufacturing issues. To make PV generated power a reality in every home, a Multi-Junction Multi-Terminal (MJMT) PV architecture can be employed combining silicon and another earth abundant material. However, forming electronic grade thin films of earth abundant materials is a non-trivial challenge; without solving this, it is impossible to increase the overall PV efficiency. Deposition of Copper (I) Oxide, an earth abundant semiconducting material, was conducted using an optimized Photo assisted Chemical Vapor Deposition process. X-Ray Diffraction, Ellipsometry, Transmission Electron Microscopy, and Profilometry revealed that the films composed of Cu2O of about 90 nm thickness and the grain size was as large as 600 nm. This result shows an improvement in material properties over previously grown thin films of Cu2O. Measurement of I-V characteristics of a diode structure composed of the Cu2O indicates an increase in On/Off ratio to 17,000 from the previous best value of 800. These results suggest that the electronic quality of the thin films deposited using our optimized process to be better than the results reported elsewhere. Using this optimized thin film forming technique, it is now possible to create a complete MJMT structure to improve the terrestrial commercial PV efficiency.

Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures.

PubMed

Simon, John; Zhang, Ze; Goodman, Kevin; Xing, Huili; Kosel, Thomas; Fay, Patrick; Jena, Debdeep

2009-07-10

The large electronic polarization in III-V nitrides allows for novel physics not possible in other semiconductor families. In this work, interband Zener tunneling in wide-band-gap GaN heterojunctions is demonstrated by using polarization-induced electric fields. The resulting tunnel diodes are more conductive under reverse bias, which has applications for zero-bias rectification and mm-wave imaging. Since interband tunneling is traditionally prohibitive in wide-band-gap semiconductors, these polarization-induced structures and their variants can enable a number of devices such as multijunction solar cells that can operate under elevated temperatures and high fields.

Microfluidic chips with multi-junctions: an advanced tool in recovering proteins from inclusion bodies

PubMed Central

Yamaguchi, Hiroshi; Miyazaki, Masaya

2015-01-01

Active recombinant proteins are used for studying the biological functions of genes and for the development of therapeutic drugs. Overexpression of recombinant proteins in bacteria often results in the formation of inclusion bodies, which are protein aggregates with non-native conformations. Protein refolding is an important process for obtaining active recombinant proteins from inclusion bodies. However, the conventional refolding method of dialysis or dilution is time-consuming and recovered active protein yields are often low, and a cumbersome trial-and-error process is required to achieve success. To circumvent these difficulties, we used controllable diffusion through laminar flow in microchannels to regulate the denaturant concentration. This method largely aims at reducing protein aggregation during the refolding procedure. This Commentary introduces the principles of the protein refolding method using microfluidic chips and the advantage of our results as a tool for rapid and efficient recovery of active recombinant proteins from inclusion bodies. PMID:25531187

Microfluidic chips with multi-junctions: an advanced tool in recovering proteins from inclusion bodies.

PubMed

Yamaguchi, Hiroshi; Miyazaki, Masaya

2015-01-01

Active recombinant proteins are used for studying the biological functions of genes and for the development of therapeutic drugs. Overexpression of recombinant proteins in bacteria often results in the formation of inclusion bodies, which are protein aggregates with non-native conformations. Protein refolding is an important process for obtaining active recombinant proteins from inclusion bodies. However, the conventional refolding method of dialysis or dilution is time-consuming and recovered active protein yields are often low, and a cumbersome trial-and-error process is required to achieve success. To circumvent these difficulties, we used controllable diffusion through laminar flow in microchannels to regulate the denaturant concentration. This method largely aims at reducing protein aggregation during the refolding procedure. This Commentary introduces the principles of the protein refolding method using microfluidic chips and the advantage of our results as a tool for rapid and efficient recovery of active recombinant proteins from inclusion bodies.

2D matrix engineering for homogeneous quantum dot coupling in photovoltaic solids.

PubMed

Xu, Jixian; Voznyy, Oleksandr; Liu, Mengxia; Kirmani, Ahmad R; Walters, Grant; Munir, Rahim; Abdelsamie, Maged; Proppe, Andrew H; Sarkar, Amrita; García de Arquer, F Pelayo; Wei, Mingyang; Sun, Bin; Liu, Min; Ouellette, Olivier; Quintero-Bermudez, Rafael; Li, Jie; Fan, James; Quan, Lina; Todorovic, Petar; Tan, Hairen; Hoogland, Sjoerd; Kelley, Shana O; Stefik, Morgan; Amassian, Aram; Sargent, Edward H

2018-06-01

Colloidal quantum dots (CQDs) are promising photovoltaic (PV) materials because of their widely tunable absorption spectrum controlled by nanocrystal size 1,2 . Their bandgap tunability allows not only the optimization of single-junction cells, but also the fabrication of multijunction cells that complement perovskites and silicon 3 . Advances in surface passivation 2,4-7 , combined with advances in device structures 8 , have contributed to certified power conversion efficiencies (PCEs) that rose to 11% in 2016 9 . Further gains in performance are available if the thickness of the devices can be increased to maximize the light harvesting at a high fill factor (FF). However, at present the active layer thickness is limited to ~300 nm by the concomitant photocarrier diffusion length. To date, CQD devices thicker than this typically exhibit decreases in short-circuit current (J SC ) and open-circuit voltage (V OC ), as seen in previous reports 3,9-11 . Here, we report a matrix engineering strategy for CQD solids that significantly enhances the photocarrier diffusion length. We find that a hybrid inorganic-amine coordinating complex enables us to generate a high-quality two-dimensionally (2D) confined inorganic matrix that programmes internanoparticle spacing at the atomic scale. This strategy enables the reduction of structural and energetic disorder in the solid and concurrent improvements in the CQD packing density and uniformity. Consequently, planar devices with a nearly doubled active layer thicknesses (~600 nm) and record values of J SC (32 mA cm -2 ) are fabricated. The V OC improved as the current was increased. We demonstrate CQD solar cells with a certified record efficiency of 12%.

High-Performance Polymer Solar Cells Based on a Wide-Bandgap Polymer Containing Pyrrolo[3,4-f]benzotriazole-5,7-dione with a Power Conversion Efficiency of 8.63.

PubMed

Lan, Liuyuan; Chen, Zhiming; Hu, Qin; Ying, Lei; Zhu, Rui; Liu, Feng; Russell, Thomas P; Huang, Fei; Cao, Yong

2016-09-01

A novel donor-acceptor type conjugated polymer based on a building block of 4,8-di(thien-2-yl) - 6-octyl-2-octyl-5 H- pyrrolo[3,4- f ]benzotriazole-5,7(6 H )-dione (TZBI) as the acceptor unit and 4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)-benzo-[1,2- b :4,5- b' ]dithiophene as the donor unit, named as PTZBIBDT, is developed and used as an electron-donating material in bulk-heterojunction polymer solar cells. The resulting copolymer exhibits a wide bandgap of 1.81 eV along with relatively deep highest occupied molecular orbital energy level of -5.34 eV. Based on the optimized processing conditions, including thermal annealing, and the use of a water/alcohol cathode interlayer, the single-junction polymer solar cell based on PTZBIBDT:PC 71 BM ([6,6]-phenyl-C 71 -butyric acid methyl ester) blend film affords a power conversion efficiency of 8.63% with an open-circuit voltage of 0.87 V, a short circuit current of 13.50 mA cm -2 , and a fill factor of 73.95%, which is among the highest values reported for wide-bandgap polymers-based single-junction organic solar cells. The morphology studies on the PTZBIBDT:PC 71 BM blend film indicate that a fibrillar network can be formed and the extent of phase separation can be mani-pulated by thermal annealing. These results indicate that the TZBI unit is a very promising building block for the synthesis of wide-bandgap polymers for high-performance single-junction and tandem (or multijunction) organic solar cells.

Thermophotovoltaic Energy Conversion for Space Applications

NASA Astrophysics Data System (ADS)

Teofilo, V. L.; Choong, P.; Chen, W.; Chang, J.; Tseng, Y.-L.

2006-01-01

Thermophotovoltaic (TPV) energy conversion cells have made steady and over the years considerable progress since first evaluated by Lockheed Martin for direct conversion using nuclear power sources in the mid 1980s. The design trades and evaluations for application to the early defensive missile satellites of the Strategic Defense Initiative found the cell technology to be immature with unacceptably low cell efficiencies comparable to thermoelectric of <10%. Rapid advances in the epitaxial growth technology for ternary compound semiconductors, novel double hetero-structure junctions, innovative monolithic integrated cell architecture, and bandpass tandem filter have, in concert, significantly improved cell efficiencies to 25% with the promise of 35% using solar cell like multi-junction approach in the near future. Recent NASA sponsored design and feasibility testing programs have demonstrated the potential for 19% system efficiency for 100 We radioisotopic power sources at an integrated specific power of ~14 We/kg. Current state of TPV cell technology however limits the operating temperature of the converter cells to < 400K due to radiator mass consideration. This limitation imposes no system mass penalty for the low power application for use with radioisotopes power sources because of the high specific power of the TPV cell converters. However, the application of TPV energy conversion for high power sources has been perceived as having a major impediment above 1 kWe due to the relative low waste heat rejection temperature. We explore this limitation and compare the integrated specific power of TPV converters with current and projected TPV cells with other advanced space power conversion technologies. We find that when the redundancy needed required for extended space exploration missions is considered, the TPV converters have a much higher range of applicability then previously understood. Furthermore, we believe that with a relatively modest modifications of the current epitaxial growth in MOCVD, an optimal cell architecture for elevated TPV operation can be found to out-perform the state-of-the-art TPV at an elevated temperature.

Report on Project to Characterize Multi-Junction Solar Cells in the Stratosphere using Low-Cost Balloon and Communication Technologies

NASA Technical Reports Server (NTRS)

Mirza, Ali; Sant, David; Woodyard, James R.; Johnston, Richard R.; Brown, William J.

2002-01-01

Balloon, control and communication technologies are under development in our laboratory for testing multi-junction solar cells in the stratosphere to achieve near AM0 conditions. One flight, Suntracker I, has been carried out reported earlier. We report on our efforts in preparation for a second flight, Suntracker II, that was aborted due to hardware problems. The package for Suntracker I system has been modified to include separate electronics and battery packs for the 70 centimeter and 2 meter systems. The collimator control system and motor gearboxes have been redesigned to address problems with the virtual stops and backlash. Surface mount technology on a printed circuit board was used in place of the through-hole prototype circuit in efforts to reduce weight and size, and improve reliability. A mobile base station has been constructed that includes a 35' tower with a two axis rotator and multi-element yagi antennas. Modifications in Suntracker I and the factors that lead to aborting Suntracker II are discussed.

Generalized Optoelectronic Model of Series-Connected Multijunction Solar Cells

DOE PAGES

Geisz, John F.; Steiner, Myles A.; Garcia, Ivan; ...

2015-10-02

The emission of light from each junction in a series-connected multijunction solar cell, we found, both complicates and elucidates the understanding of its performance under arbitrary conditions. Bringing together many recent advances in this understanding, we present a general 1-D model to describe luminescent coupling that arises from both voltage-driven electroluminescence and voltage-independent photoluminescence in nonideal junctions that include effects such as Sah-Noyce-Shockley (SNS) recombination with n ≠ 2, Auger recombination, shunt resistance, reverse-bias breakdown, series resistance, and significant dark area losses. The individual junction voltages and currents are experimentally determined from measured optical and electrical inputs and outputs ofmore » the device within the context of the model to fit parameters that describe the devices performance under arbitrary input conditions. Furthermore, our techniques to experimentally fit the model are demonstrated for a four-junction inverted metamorphic solar cell, and the predictions of the model are compared with concentrator flash measurements.« less

Evaluation of four inch diameter VGF-Ge substrates used for manufacturing multi-junction solar cell

NASA Astrophysics Data System (ADS)

Kewei, Cao; Tong, Liu; Jingming, Liu; Hui, Xie; Dongyan, Tao; Youwen, Zhao; Zhiyuan, Dong; Feng, Hui

2016-06-01

Low dislocation density Ge wafers grown by a vertical gradient freeze (VGF) method used for the fabrication of multi-junction photovoltaic cells (MJC) have been studied by a whole wafer scale measurement of the lattice parameter, X-ray rocking curves, etch pit density (EPD), impurities concentration, minority carrier lifetime and residual stress. Impurity content in the VGF-Ge wafers, including that of B, is quite low although B2O3 encapsulation is used in the growth process. An obvious difference exists across the whole wafer regarding the distribution of etch pit density, lattice parameter, full width at half maximum (FWHM) of the X-ray rocking curve and residual stress measured by Raman spectra. These are in contrast to a reference Ge substrate wafer grown by the Cz method. The influence of the VGF-Ge substrate on the performance of the MJC is analyzed and evaluated by a comparison of the statistical results of cell parameters. Project supported by the National Natural Science Foundation of China (No. 61474104).

TOPLHA and ALOHA: comparison between Lower Hybrid wave coupling codes

NASA Astrophysics Data System (ADS)

Meneghini, Orso; Hillairet, J.; Goniche, M.; Bilato, R.; Voyer, D.; Parker, R.

2008-11-01

TOPLHA and ALOHA are wave coupling simulation tools for LH antennas. Both codes are able to account for realistic 3D antenna geometries and use a 1D plasma model. In the framework of a collaboration between MIT and CEA laboratories, the two codes have been extensively compared. In TOPLHA the EM problem is self consistently formulated by means of a set of multiple coupled integral equations having as domain the triangles of the meshed antenna surface. TOPLHA currently uses the FELHS code for modeling the plasma response. ALOHA instead uses a mode matching approach and its own plasma model. Comparisons have been done for several plasma scenarios on different antenna designs: an array of independent waveguides, a multi-junction antenna and a passive/active multi-junction antenna. When simulating the same geometry and plasma conditions the two codes compare remarkably well both for the reflection coefficients and for the launched spectra. The different approach of the two codes to solve the same problem strengthens the confidence in the final results.

Round-the-clock power supply and a sustainable economy via synergistic integration of solar thermal power and hydrogen processes

PubMed Central

Gençer, Emre; Mallapragada, Dharik S.; Maréchal, François; Tawarmalani, Mohit; Agrawal, Rakesh

2015-01-01

We introduce a paradigm—“hydricity”—that involves the coproduction of hydrogen and electricity from solar thermal energy and their judicious use to enable a sustainable economy. We identify and implement synergistic integrations while improving each of the two individual processes. When the proposed integrated process is operated in a standalone, solely power production mode, the resulting solar water power cycle can generate electricity with unprecedented efficiencies of 40–46%. Similarly, in standalone hydrogen mode, pressurized hydrogen is produced at efficiencies approaching ∼50%. In the coproduction mode, the coproduced hydrogen is stored for uninterrupted solar power production. When sunlight is unavailable, we envision that the stored hydrogen is used in a “turbine”-based hydrogen water power (H2WP) cycle with the calculated hydrogen-to-electricity efficiency of 65–70%, which is comparable to the fuel cell efficiencies. The H2WP cycle uses much of the same equipment as the solar water power cycle, reducing capital outlays. The overall sun-to-electricity efficiency of the hydricity process, averaged over a 24-h cycle, is shown to approach ∼35%, which is nearly the efficiency attained by using the best multijunction photovoltaic cells along with batteries. In comparison, our proposed process has the following advantages: (i) It stores energy thermochemically with a two- to threefold higher density, (ii) coproduced hydrogen has alternate uses in transportation/chemical/petrochemical industries, and (iii) unlike batteries, the stored energy does not discharge over time and the storage medium does not degrade with repeated uses. PMID:26668380

Round-the-clock power supply and a sustainable economy via synergistic integration of solar thermal power and hydrogen processes.

PubMed

Gençer, Emre; Mallapragada, Dharik S; Maréchal, François; Tawarmalani, Mohit; Agrawal, Rakesh

2015-12-29

We introduce a paradigm-"hydricity"-that involves the coproduction of hydrogen and electricity from solar thermal energy and their judicious use to enable a sustainable economy. We identify and implement synergistic integrations while improving each of the two individual processes. When the proposed integrated process is operated in a standalone, solely power production mode, the resulting solar water power cycle can generate electricity with unprecedented efficiencies of 40-46%. Similarly, in standalone hydrogen mode, pressurized hydrogen is produced at efficiencies approaching ∼50%. In the coproduction mode, the coproduced hydrogen is stored for uninterrupted solar power production. When sunlight is unavailable, we envision that the stored hydrogen is used in a "turbine"-based hydrogen water power (H2WP) cycle with the calculated hydrogen-to-electricity efficiency of 65-70%, which is comparable to the fuel cell efficiencies. The H2WP cycle uses much of the same equipment as the solar water power cycle, reducing capital outlays. The overall sun-to-electricity efficiency of the hydricity process, averaged over a 24-h cycle, is shown to approach ∼35%, which is nearly the efficiency attained by using the best multijunction photovoltaic cells along with batteries. In comparison, our proposed process has the following advantages: (i) It stores energy thermochemically with a two- to threefold higher density, (ii) coproduced hydrogen has alternate uses in transportation/chemical/petrochemical industries, and (iii) unlike batteries, the stored energy does not discharge over time and the storage medium does not degrade with repeated uses.

Overview of recent HL-2A experiments

NASA Astrophysics Data System (ADS)

Duan, X. R.; Liu, Yi; Xu, M.; Yan, L. W.; Xu, Y.; Song, X. M.; Dong, J. Q.; Ding, X. T.; Chen, L. Y.; Lu, B.; Liu, D. Q.; Rao, J.; Xuan, W. M.; Yang, Q. W.; Zheng, G. Y.; Zou, X. L.; Liu, Y. Q.; Zhong, W. L.; Zhao, K. J.; Ji, X. Q.; Mao, W. C.; Wang, Q. M.; Li, Q.; Cao, J. Y.; Cao, Z.; Lei, G. J.; Zhang, J. H.; Li, X. D.; Bai, X. Y.; Cheng, J.; Chen, W.; Cui, Z. Y.; Delpech, L.; Diamond, P. H.; Dong, Y. B.; Ekedahl, A.; Hoang, T.; Huang, Y.; Ida, K.; Itoh, K.; Itoh, S.-I.; Isobe, M.; Inagaki, S.; Mazon, D.; Morita, S.; Peysson, Y.; Shi, Z. B.; Wang, X. G.; Xiao, G. L.; Yu, D. L.; Yu, L. M.; Zhang, Y. P.; Zhou, Y.; Cui, C. H.; Feng, B. B.; Huang, M.; Li, Y. G.; Li, B.; Li, G. S.; Li, H. J.; Li, Qing; Peng, J. F.; Wang, Y. Q.; Yuan, B. S.; Liu, Yong; HL-2A Team

2017-10-01

Since the last Fusion Energy Conference, significant progress has been made in the following areas. The first high coupling efficiency low-hybrid current drive (LHCD) with a passive-active multi-junction (PAM) antenna was successfully demonstrated in the H-mode on the HL-2A tokamak. Double critical impurity gradients of electromagnetic turbulence were observed in H-mode plasmas. Various ELM mitigation techniques have been investigated, including supersonic molecular beam injection (SMBI), impurity seeding, resonant magnetic perturbation (RMP) and low-hybrid wave (LHW). The ion internal transport barrier was observed in neutral beam injection (NBI) heated plasmas. Neoclassical tearing modes (NTMs) driven by the transient perturbation of local electron temperature during non-local thermal transport events have been observed, and a new type of non-local transport triggered by the ion fishbone was found. A long-lasting runaway electron plateau was achieved after argon injection and the runaway current was successfully suppressed by SMBI. It was found that low-n Alfvénic ion temperature gradient (AITG) modes can be destabilized in ohmic plasmas, even with weak magnetic shear and low-pressure gradients. For the first time, the synchronization of geodesic acoustic mode (GAM) and magnetic fluctuations was observed in edge plasmas, revealing frequency entrainment and phase lock. The spatiotemporal features of zonal flows were also studied using multi-channel correlation Doppler reflectometers.

Solar cell system having alternating current output

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr. (Inventor)

1980-01-01

A monolithic multijunction solar cell was modified by fabricating an integrated circuit inverter on the back of the cell to produce a device capable of generating an alternating current output. In another embodiment, integrated curcuit power conditioning electronics was incorporated in a module containing a solar cell power supply.

Characterization and Analysis of Multi-Quantum Well Solar Cells

NASA Astrophysics Data System (ADS)

Bradshaw, Geoffrey Keith

Multijunction (MJ) photovoltaics are the most efficient solar cells today. Under sufficient solar concentration, these devices can achieve over 44% efficiency, roughly twenty percentage points higher than single crystal silicon based solar cells. Current records for triple junction (3J) multijunction cells are being challenged and broken regularly. However, it is unclear at this time which method of device growth will ultimately produce an efficiency that approaches the Shockley-Queisser limit. Lattice-matched (LM) MJ cells offer benefits over metamorphic and/or inverted metamorphic cells in that the device can be grown continuously, require no extra fabrication steps, and will ultimate produce the highest material quality throughout all junctions. The efficiency of current 3JMJ cells composed of GaInP(1.8eV)/(In)GaAs(1.4eV)/Ge(0.7eV) is limited by the bandgap combination used in the structure. The low energy bandgap bottom Ge cell produces roughly twice as much current as the middle GaAs cell and results in a current mismatch that limits the total current and thus total efficiency. By replacing the middle GaAs subcell with a 1-1.2eV subcell, the current mismatch could be alleviated and the efficiency enhanced. Unfortunately, there are no semiconductors lattice-matched to GaAs/Ge with this bandgap. InGaAs, which has a larger lattice constant than GaAs/Ge, can be grown with the appropriate bandgap, but due to compressive stresses introduced during growth the thickness that can be grown is limited to tens of nanometers, thus limiting absorption and current production. However, by growing layers of tensile strained GaAsP with appropriate thickness and composition, the stresses introduced by the InGaAs can be balanced. By repeating this process and inserting these layers into the intrinsic region of the GaAs middle subcell, a low bandgap material with an effective lattice constant equal to that of GaAs is introduced while maintaining lattice-matching conditions. The InGaAs layers form quantum well capable of absorbing lower energy wavelengths than GaAs which leads to an increase in current. Absorption due to quantum wells is proportional to the number of quantum wells in the intrinsic region. Therefore, in order to grow the maximum number of the absorbing quantum wells within the background doping limited intrinsic region, it is necessary to reduce the width of the non-absorbing GaAsP barriers to as thin as possible. The research presented within shows this concept by exploring the fabrication and electrical characterization of these quantum well devices when balanced with ultra-thin GaAsP layers with very high phosphorus content (˜75-80%). By reducing the width of the barriers to approximately 30 A, tunneling of carriers dominates carrier transport across the structure as opposed to the traditional quantum well approach with very thick, low phosphorus GaAsP barriers that rely on thermionic emission of carriers to escape the InGaAs quantum wells. This research shows the strong effect and sensitivity to not only the thickness the GaAsP barriers, but also to the polarity of the device and the dependence of electric field. As well widths are decreased, quantum confinement of carriers within the InGaAs quantum wells increases. This leads to a blue-shift in the wavelengths of light absorbed and limits the current gain potential of the quantum well structure. To combat this blue-shift, the staggered MQW is introduced. The staggering technique can be use to not only improve wavelength absorption extension, but also lead to an enhancement in the absorption coefficient. These structures were also included into a GaInP/GaAs(MQW) tandem device to see the effects of the structure on the GaInP top cell.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soer, Wouter

LED luminaires have seen dramatic changes in cost breakdown over the past few years. The LED component cost, which until recently was the dominant portion of luminaire cost, has fallen to a level of the same order as the other luminaire components, such as the driver, housing, optics etc. With the current state of the technology, further luminaire performance improvement and cost reduction is realized most effectively by optimization of the whole system, rather than a single component. This project focuses on improving the integration between LEDs and drivers. Lumileds has developed a light engine platform based on low-cost high-powermore » LEDs and driver topologies optimized for integration with these LEDs on a single substrate. The integration of driver and LEDs enables an estimated luminaire cost reduction of about 25% for targeted applications, mostly due to significant reductions in driver and housing cost. The high-power LEDs are based on Lumileds’ patterned sapphire substrate flip-chip (PSS-FC) technology, affording reduced die fabrication and packaging cost compared to existing technology. Two general versions of PSS-FC die were developed in order to create the desired voltage and flux increments for driver integration: (i) small single-junction die (0.5 mm 2), optimal for distributed lighting applications, and (ii) larger multi-junction die (2 mm 2 and 4 mm 2) for high-power directional applications. Two driver topologies were developed: a tapped linear driver topology and a single-stage switch-mode topology, taking advantage of the flexible voltage configurations of the new PSS-FC die and the simplification opportunities enabled by integration of LEDs and driver on the same board. A prototype light engine was developed for an outdoor “core module” application based on the multi-junction PSS-FC die and the single-stage switch-mode driver. The light engine meets the project efficacy target of 128 lm/W at a luminous flux greater than 4100 lm, a correlated color temperature (CCT) of 4000K and a color rendering index (CRI) greater than 70.« less

Optimization of absorption bands of dye-sensitized and perovskite tandem solar cells based on loss-in-potential values.

PubMed

Sobuś, Jan; Ziółek, Marcin

2014-07-21

A numerical study of optimal bandgaps of light absorbers in tandem solar cell configurations is presented with the main focus on dye-sensitized solar cells (DSSCs) and perovskite solar cells (PSCs). The limits in efficiency and the expected improvements of tandem structures are investigated as a function of total loss-in-potential (V(L)), incident photon to current efficiency (IPCE) and fill factor (FF) of individual components. It is shown that the optimal absorption onsets are significantly smaller than those derived for multi-junction devices. For example, for double-cell devices the onsets are at around 660 nm and 930 nm for DSSCs with iodide based electrolytes and at around 720 nm and 1100 nm for both DSSCs with cobalt based electrolytes and PSCs. Such configurations can increase the total sunlight conversion efficiency by about 35% in comparison to single-cell devices of the same VL, IPCE and FF. The relevance of such studies for tandem n-p DSSCs and for a proposed new configuration for PSCs is discussed. In particular, it is shown that maximum total losses of 1.7 V for DSSCs and 1.4 V for tandem PSCs are necessary to give any efficiency improvement with respect to the single bandgap device. This means, for example, a tandem n-p DSSC with TiO2 and NiO porous electrodes will hardly work better than the champion single DSSC. A source code of the program used for calculations is also provided.

Improving Efficiency of III-N Quantum Well Based Optoelectronic Devices through Active Region Design and Growth Techniques

NASA Astrophysics Data System (ADS)

Young, Nathan Garrett

The III-Nitride materials system provides a fascinating platform for developing optoelectronic devices, such as solar cells and LEDs, which have the power to dramatically improve the efficiency of our power consumption and reduce our environmental footprint. Finding ways to make these devices more efficient is key to driving their widespread adoption. This dissertation focuses on the intersection of challenges in physics and metalorganic chemical vapor deposition (MOCVD) growth at the nanoscale when designing for device efficiency. In order to create the best possible InGaN solar cell, a multiple quantum well (MQW) active region design had to be employed to prevent strain relaxation related degradation. There were two competing challenges for MQW active region design and growth. First, it was observed current collection efficiency improved with thinner quantum barriers, which promoted efficient tunneling transport instead of inefficiency thermally activated escape. Second, GaN barriers could planarize surface defects in the MQW region under the right conditions and when grown thick enough. A two-step growth method for thinner quantum barriers was developed that simultaneously allowed for tunneling transport and planarized V-defects. Barriers as thin as 4 nm were employed in MQW active regions with up to 30 periods without structural or electrical degradation, leading to record performance. Application of dielectric optical coatings greatly reduced surface reflections and allowed a second pass of light through the device. This both demonstrated the feasibility of multijunction solar integration and boosted conversion efficiency to record levels for an InGaN solar cell. III-N LEDs have achieved state-of-the-art performance for decades, but still suffer from the phenomena of efficiency droop, where device efficiency drops dramatically at high power operation. Droop is exacerbated by the polarization-induced electric fields in InGaN quantum wells, which originate from a lack of inversion symmetry in GaN's wurtzite crystal structure. These fields can be screened by using highly doped layers, but the extreme dopant densities predicted by simulation for complete screening may require using Ge as an alternative n-type dopant to Si. GaN:Ge layers with excellent electrical characteristics were grown by MOCVD with doping densities exceeding 1020 cm -3. However, their surface morphologies were very poor and they proved a poor screening dopant in LED structures. Using Si as the n-type screening dopant, LEDs with single QW active regions were grown, packaged, and tested. Biased photoluminescence showed strong evidence of complete polarization screening. The LEDs had low droop, but also low peak efficiencies. Possible explanations for trends in efficiency with varying QW width and field screening will be discussed.

Study of p-type and intrinsic materials for amorphous silicon based solar cells

NASA Astrophysics Data System (ADS)

Du, Wenhui

This dissertation summarizes the research work on the investigation and optimization of high efficiency hydrogenated amorphous silicon (a-Si:H) based thin film n-i-p single-junction and multi-junction solar cells, deposited using radio frequency (RF) and very high frequency (VHF) plasma enhanced chemical vapor deposition (PECVD) techniques. The fabrication and characterization of high quality p-type and intrinsic materials for a-Si:H based solar cells have been systematically and intensively studied. Hydrogen dilution, substrate temperature, gas flow rate, RF- or VHF-power density, and films deposition time have been optimized to obtain "on-the-edge" materials. To understand the material structure of the silicon p-layer providing a high Voc a-Si:H solar cell, hydrogenated amorphous, protocrystalline, and nanocrystalline silicon p-layers have been prepared using RF-PECVD and characterized by Raman spectroscopy and high resolution transmission electronic microscopy (HRTEM). It was found that the optimum Si:H p-layer for n-i-p a-Si:H solar cells is composed of fine-grained nanocrystals with crystallite sizes in the range of 3-5 nm embedded in an amorphous network. Using the optimized p-layer, an a-Si:H single-junction solar cell with a very high Voc value of 1.042 V and a FF value of 0.74 has been obtained. a-Si:H, a-SiGe:H and nc-Si:H i-layers have been prepared using RF- and VHF-PECVD techniques and monitored by different optical and electrical characterizations. Single-junction a-Si:H, a-SiGe and nc-Si:H cells have been developed and optimized. Intermediate bandgap a-SiGe:H solar cells achieved efficiencies over 12.5%. On the basis of optimized component cells, we achieved a-Si:Hla-SiGe:H tandem solar cells with efficiencies of ˜12.9% and a-Si:H/a-SiGe:H/a-SiGe:H triple-junction cells with efficiencies of ˜12.03%. VHF-PECVD technique was used to increase the deposition rates of the narrow bandgap materials. The deposition rate for a-SiGe:H i-layer attained 9 A/sec and the solar cell had a V oc of 0.588 V, Jsc of 20.4 mA/cm2, FF of 0.63, and efficiency of 7.6%. Preliminary research on the preparation of a-Si:Hlnc-Si:H tandem solar cells and a-Si:Hla-SiGe:Hlnc-Si:H triple-junction cells has also been undertaken using VHF nc-Si:H bottom cells with deposition rates of 6 A/sec. All I-V measurements were carried out under AM1.5G (100 MW/cm2) and the cell area was 0.25 cm2.

Simulation and optimization performance of GaAs/GaAs0.5Sb0.5/GaSb mechanically stacked tandem solar cells

NASA Astrophysics Data System (ADS)

Tayubi, Y. R.; Suhandi, A.; Samsudin, A.; Arifin, P.; Supriyatman

2018-05-01

Different approaches have been made in order to reach higher solar cells efficiencies. Concepts for multilayer solar cells have been developed. This can be realised if multiple individual single junction solar cells with different suitably chosen band gaps are connected in series in multi-junction solar cells. In our work, we have simulated and optimized solar cells based on the system mechanically stacked using computer simulation and predict their maximum performance. The structures of solar cells are based on the single junction GaAs, GaAs0.5Sb0.5 and GaSb cells. We have simulated each cell individually and extracted their optimal parameters (layer thickness, carrier concentration, the recombination velocity, etc), also, we calculated the efficiency of each cells optimized by separation of the solar spectrum in bands where the cell is sensible for the absorption. The optimal values of conversion efficiency have obtained for the three individual solar cells and the GaAs/GaAs0.5Sb0.5/GaSb tandem solar cells, that are: η = 19,76% for GaAs solar cell, η = 8,42% for GaAs0,5Sb0,5 solar cell, η = 4, 84% for GaSb solar cell and η = 33,02% for GaAs/GaAs0.5Sb0.5/GaSb tandem solar cell.

Enhanced near-infrared to visible upconversion nanoparticles of Ho³⁺-Yb³⁺-F⁻ tri-doped TiO₂ and its application in dye-sensitized solar cells with 37% improvement in power conversion efficiency.

PubMed

Yu, Jia; Yang, Yulin; Fan, Ruiqing; Liu, Danqing; Wei, Liguo; Chen, Shuo; Li, Liang; Yang, Bin; Cao, Wenwu

2014-08-04

New near-infrared (NIR)-to-green upconversion nanoparticles of Ho(3+)-Yb(3+)-F(-) tridoped TiO2 (UC-F-TiO2) were designed and fabricated via the hydrosol-hydrothermal method. Under 980 nm NIR excitation, UC-F-TiO2 emit strong green upconversion fluorescence with three emission bands at 543, 644, and 751 nm and convert the NIR light in situ to the dye-sensitive visible light that could effectively reduce the distance between upconversion materials and sensitizers; thus, they minimize the loss of the converted light. Our results show that this UC-F-TiO2 offers excellent opportunities for the other types of solar cells applications, such as organic solar cells, c-Si solar cells, multijunction solar cells, and so on. When integrating the UC-F-TiO2 into dye-sensitized solar cells (DSSCs), superior total energy conversion efficiency was achieved. Under AM1.5G light, open-circuit voltage reached 0.77 ± 0.01 V, short-circuit current density reached 21.00 ± 0.69 mA cm(-2), which resulted in an impressive overall energy conversion efficiency of 9.91 ± 0.30%, a 37% enhancement compared to DSSCs with pristine TiO2 photoanode.

Combined Space Environmental Exposure Tests of Multi-Junction GaAs/Ge Solar Array Coupons

NASA Technical Reports Server (NTRS)

Hoang, Bao; Wong, Frankie; Corey, Ron; Gardiner, George; Funderburk, Victor V.; Gahart, Richard; Wright, Kenneth H.; Schneider, Todd; Vaughn, Jason

2010-01-01

A set of multi-junction GaAs/Ge solar array test coupons were subjected to a sequence of 5-year increments of combined environmental exposure tests. The purpose of this test program is to understand the changes and degradation of the solar array panel components, including its ESD mitigation design features in their integrated form, after multiple years (up to 15) of simulated geosynchronous space environment. These tests consist of: UV radiation, electrostatic discharge (ESD), electron/proton particle radiation, thermal cycling, and ion thruster plume exposures. The solar radiation was produced using a Mercury-Xenon lamp with wavelengths in the UV spectrum ranging from 230 to 400 nm. The ESD test was performed in the inverted-gradient mode using a low-energy electron (2.6 - 6 keV) beam exposure. The ESD test also included a simulated panel coverglass flashover for the primary arc event. The electron/proton radiation exposure included both 1.0 MeV and 100 keV electron beams simultaneous with a 40 keV proton beam. The thermal cycling included simulated transient earth eclipse for satellites in geosynchronous orbit. With the increasing use of ion thruster engines on many satellites, the combined environmental test also included ion thruster exposure to determine whether solar array surface erosion had any impact on its performance. Before and after each increment of environmental exposures, the coupons underwent visual inspection under high power magnification and electrical tests that included characterization by LAPSS, Dark I-V, and electroluminescence. This paper discusses the test objective, test methodologies, and preliminary results after 5 years of simulated exposure.

Integrated photoelectrochemical cell and system having a liquid electrolyte

DOEpatents

Deng, Xunming; Xu, Liwei

2010-07-06

An integrated photoelectrochemical (PEC) cell generates hydrogen and oxygen from water while being illuminated with radiation. The PEC cell employs a liquid electrolyte, a multi-junction photovoltaic electrode, and a thin ion-exchange membrane. A PEC system and a method of making such PEC cell and PEC system are also disclosed.

Bi2O3 cocatalyst improving photocatalytic hydrogen evolution performance of TiO2

NASA Astrophysics Data System (ADS)

Xu, Difa; Hai, Yang; Zhang, Xiangchao; Zhang, Shiying; He, Rongan

2017-04-01

Photocatalytic hydrogen production using water splitting is of potential importance from the viewpoint of renewable energy development. Herein, Bi2O3-TiO2 composite photocatalysts presented as Bi-Bi2O3-anatase-rutile TiO2 multijunction were first fabricated by a simple impregnation-calcination method using Bi2O3 as H2-production cocatalysts. The obtained multijunction samples exhibit an obvious enhancement in photocatalytic H2 evolution activity in the presence of glycerol. The effect of Bi2O3 amount on H2-evolution activity of TiO2 was investigated and the optimal Bi2O3 content was found to be 0.89 mol%, achieving a H2-production rate of 920 μmol h-1, exceeding that of pure TiO2 by more than 73 times. The enhanced mechanism of photocatalytic H2-evolution activity is proposed. This study will provide new insight into the design and fabrication of TiO2-based hydrogen-production photocatalysts using low-cost Bi2O3 as cocatalyst.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guha, S.

This report describes the research program intended to expand, enhance, and accelerate knowledge and capabilities for developing high-performance, two-terminal multijunction amorphous silicon (a-Si) alloy cells, and modules with low manufacturing cost and high reliability. United Solar uses a spectrum-splitting, triple-junction cell structure. The top cell uses an amorphous silicon alloy of {approx}1.8-eV bandgap to absorb blue photons. The middle cell uses an amorphous silicon germanium alloy ({approx}20% germanium) of {approx}1.6-eV bandgap to capture green photons. The bottom cell has {approx}40% germanium to reduce the bandgap to {approx}1.4-eV to capture red photons. The cells are deposited on a stainless-steel substrate withmore » a predeposited silver/zinc oxide back reflector to facilitate light-trapping. A thin layer of antireflection coating is applied to the top of the cell to reduce reflection loss. The major research activities conducted under this program were: (1) Fundamental studies to improve our understanding of materials and devices; the work included developing and analyzing a-Si alloy and a-SiGe alloy materials prepared near the threshold of amorphous-to-microcrystalline transition and studying solar cells fabricated using these materials. (2) Deposition of small-area cells using a radio-frequency technique to obtain higher deposition rates. (3) Deposition of small-area cells using a modified very high frequency technique to obtain higher deposition rates. (4) Large-area cell research to obtain the highest module efficiency. (5) Optimization of solar cells and modules fabricated using production parameters in a large-area reactor.« less

Advances in multi-megawatt lower hybrid technology in support of steady-state tokamak operation

NASA Astrophysics Data System (ADS)

Delpech, L.; Achard, J.; Armitano, A.; Artaud, J. F.; Bae, Y. S.; Belo, J. H.; Berger-By, G.; Bouquey, F.; Cho, M. H.; Corbel, E.; Decker, J.; Do, H.; Dumont, R.; Ekedahl, A.; Garibaldi, P.; Goniche, M.; Guilhem, D.; Hillairet, J.; Hoang, G. T.; Kim, H. S.; Kim, J. H.; Kim, H.; Kwak, J. G.; Magne, R.; Mollard, P.; Na, Y. S.; Namkung, W.; Oh, Y. K.; Park, S.; Park, H.; Peysson, Y.; Poli, S.; Prou, M.; Samaille, F.; Yang, H. L.; The Tore Supra Team

2014-10-01

It has been demonstrated that lower hybrid current drive (LHCD) systems play a crucial role for steady-state tokamak operation, owing to their high current drive (CD) efficiency and hence their capability to reduce flux consumption. This paper describes the extensive technology programmes developed for the Tore Supra (France) and the KSTAR (Korea) tokamaks in order to bring continuous wave (CW) LHCD systems into operation. The Tore Supra LHCD generator at 3.7 GHz is fully CW compatible, with RF power PRF = 9.2 MW available at the generator to feed two actively water-cooled launchers. On Tore Supra, the most recent and novel passive active multijunction (PAM) launcher has sustained 2.7 MW (corresponding to its design value of 25 MW m-2 at the launcher mouth) for a 78 s flat-top discharge, with low reflected power even at large plasma-launcher gaps. The fully active multijunction (FAM) launcher has reached 3.8 MW of coupled power (24 MW m-2 at the launcher mouth) with the new TH2103C klystrons. By combining both the PAM and FAM launchers, 950 MJ of energy, using 5.2 MW of LHCD and 1 MW of ICRH (ion cyclotron resonance heating), was injected for 160 s in 2011. The 3.7 GHz CW LHCD system will be a key element within the W (for tungsten) environment in steady-state Tokamak (WEST) project, where the aim is to test ITER technologies for high heat flux components in relevant heat flux density and particle fluence conditions. On KSTAR, a 2 MW LHCD system operating at 5 GHz is under development. Recently the 5 GHz prototype klystron has reached 500 kW/600 s on a matched load, and studies are ongoing to design a PAM launcher. In addition to the studies of technology, a combination of ray-tracing and Fokker-Planck calculations have been performed to evaluate the driven current and the power deposition due to LH waves, and to optimize the N∥ spectrum for the future launcher design. Furthermore, an LHCD system at 5 GHz is being considered for a future upgrade of the ITER Heating and Current Drive systems, with a power capability of 20 MW coupled to the plasma using a PAM launcher. An R&D programme is being conducted at CEA/IRFM to develop a BeO vacuum window which is a safety critical component of the transmission line. In addition, a mock-up of a TE10-TE30 mode converter at 5 GHz, designed for a rectangular transmission line, has been manufactured and successfully tested on Tore Supra at low RF power.

Multijunction Solar Cell Technology for Mars Surface Applications

NASA Technical Reports Server (NTRS)

Stella, Paul M.; Mardesich, Nick; Ewell, Richard C.; Mueller, Robert L.; Endicter, Scott; Aiken, Daniel; Edmondson, Kenneth; Fetze, Chris

2006-01-01

Solar cells used for Mars surface applications have been commercial space qualified AM0 optimized devices. Due to the Martian atmosphere, these cells are not optimized for the Mars surface and as a result operate at a reduced efficiency. A multi-year program, MOST (Mars Optimized Solar Cell Technology), managed by JPL and funded by NASA Code S, was initiated in 2004, to develop tools to modify commercial AM0 cells for the Mars surface solar spectrum and to fabricate Mars optimized devices for verification. This effort required defining the surface incident spectrum, developing an appropriate laboratory solar simulator measurement capability, and to develop and test commercial cells modified for the Mars surface spectrum. This paper discusses the program, including results for the initial modified cells. Simulated Mars surface measurements of MER cells and Phoenix Lander cells (2007 launch) are provided to characterize the performance loss for those missions. In addition, the performance of the MER rover solar arrays is updated to reflect their more than two (2) year operation.

Bypass Diode Temperature Tests of a Solar Array Coupon Under Space Thermal Environment Conditions

NASA Technical Reports Server (NTRS)

Wright, Kenneth H., Jr.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie; Wu, Gordon

2016-01-01

Tests were performed on a 56-cell Advanced Triple Junction solar array coupon whose purpose was to determine margin available for bypass diodes integrated with new, large multi-junction solar cells that are manufactured from a 4-inch wafer. The tests were performed under high vacuum with coupon back side thermal conditions of both cold and ambient. The bypass diodes were subjected to a sequence of increasing discrete current steps from 0 Amp to 2.0 Amp in steps of 0.25 Amp. At each current step, a temperature measurement was obtained via remote viewing by an infrared camera. This paper discusses the experimental methodology, experiment results, and the thermal model.

By-Pass Diode Temperature Tests of a Solar Array Coupon Under Space Thermal Environment Conditions

NASA Technical Reports Server (NTRS)

Wright, Kenneth H., Jr.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie

2016-01-01

Tests were performed on a 56-cell Advanced Triple Junction solar array coupon whose purpose was to determine margin available for bypass diodes integrated with new, large multi-junction solar cells that are manufactured from a 4-inch wafer. The tests were performed under high vacuum with cold and ambient coupon back-side. The bypass diodes were subjected to a sequence of increasing discrete current steps from 0 Amp to 2.0 Amp in steps of 0.25 Amp. At each current step, a temperature measurement was obtained via remote viewing by an infrared camera. This paper discusses the experimental methodology, including the calibration of the thermal imaging system, and the results.

Enhancing ultra-high CPV passive cooling using least-material finned heat sinks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Micheli, Leonardo, E-mail: lm409@exeter.ac.uk; Mallick, Tapas K., E-mail: T.K.Mallick@exeter.ac.uk; Fernandez, Eduardo F., E-mail: E.Fernandez-Fernandez2@exeter.ac.uk

2015-09-28

Ultra-high concentrating photovoltaic (CPV) systems aim to increase the cost-competiveness of CPV by increasing the concentrations over 2000 suns. In this work, the design of a heat sink for ultra-high concentrating photovoltaic (CPV) applications is presented. For the first time, the least-material approach, widely used in electronics to maximize the thermal dissipation while minimizing the weight of the heat sink, has been applied in CPV. This method has the potential to further decrease the cost of this technology and to keep the multijunction cell within the operative temperature range. The designing procedure is described in the paper and the resultsmore » of a thermal simulation are shown to prove the reliability of the solution. A prediction of the costs is also reported: a cost of 0.151$/W{sub p} is expected for a passive least-material heat sink developed for 4000x applications.« less

NREL: News - Scientific American' Recognizes Solar Cell Research

Science.gov Websites

Scientific American' Recognizes Solar Cell Research Monday November 11, 2002 Magazine Names NREL to . NREL's research into multi-junction solar cells for more than a decade has led the way to ever more photovoltaic research can be found at www.nrel.gov/ncpv/. Selected by the magazine's Board of Editors, the

Device Performance Capabilities | Photovoltaic Research | NREL

Science.gov Websites

multijunction cells and modules. We use I-V measurement systems to assess the main performance parameters for PV cells and modules. I-V measurement systems determine the output performance of devices, including: open the device (η). Some I-V systems may also be used to perform dark I-V measurements to determine diode

Recovery of Electron/Proton Radiation-Induced Defects in n+p AlInGaP Solar Cell by Minority-Carrier Injection Annealing

NASA Technical Reports Server (NTRS)

Lee, H. S.; Yamaguchi, M.; Elkins-Daukes, N. J.; Khan, A.; Takamoto, T.; Imaizumi, M.; Ohshima, T.; Itoh, H.

2007-01-01

A high efficient In0.48Ga0.52P/In0.01Ga0.99As/Ge triple junction solar cell has been developed for application in space and terrestrial concentrator PV system [1-3]. Recently, a high conversion efficiency of 31.5% (AM1.5G) has been obtained in InGaP/(In)GaAs/Ge triple junction solar cell, and as a new top cell material of triple junction cells, (Al)InGaP [1] has been proposed to improve the open-circuit voltage (Voc) because it shows a higher Voc of 1.5V while maintaining the same short-circuit current (ISC) as a conventional InGaP top cell under AM1.5G conditions as seen in figure 1 (a). Moreover, the spectral response of 1.96eV AlInGaP cell with a thickness of 2.5..m shows a higher response in the long wavelength region, compared with that of 1.87eV InGaP cell with 0.6..m thickness, as shown in figure 1 (b). Its development will realize next generation multijunction (MJ) solar cells such as a lattice mismatched AlInGaP/InGaAs/Ge 3-junction and lattice matched AlInGaP/GaAs/InGaAsN/Ge 4-junction solar cells. Figure 2 shows the super high-efficiency MJ solar cell structures and wide band spectral response by MJ solar cells under AM1.5G conditions. For realizing high efficient MJ space solar cells, the higher radiation-resistance under the electron or proton irradiation is required. The irradiation studies for a conventional top cell InGaP have been widely done [4-6], but little irradiation work has been performed on AlInGaP solar cells. Recently, we made the first reports of 1 MeV electron or 30 keV proton irradiation effects on AlInGaP solar cells, and evaluated the defects generated by the irradiation [7,8]. The present study describes the recovery of 1 MeV electron / 30 keV proton irradiation-induced defects in n+p- AlInGaP solar cells by minority-carrier injection enhanced annealing or isochronal annealing. The origins of irradiation-induced defects observed by deep level transient spectroscopy (DLTS) measurements are discussed.

Device Modeling and Characterization for CIGS Solar Cells

NASA Astrophysics Data System (ADS)

Song, Sang Ho

We studied the way to achieve high efficiency and low cost of CuIn1-xGaxSe2 (CIGS) solar cells. The Fowler-Nordheim (F-N) tunneling currents at low bias decreased the shunt resistances and degraded the fill factor and efficiency. The activation energies of majority traps were directly related with F-N tunneling currents by the energy barriers. Air anneals decreased the efficiency from 7.74% to 5.18% after a 150 °C, 1000 hour anneal. The decrease of shunt resistance due to F-N tunneling and the increase of series resistance degrade the efficiencies of solar cells. Air anneal reduces the free carrier densities by the newly generated Cu interstitial defects (Cui). Mobile Cui defects induce the metastability in CIGS solar cell. Since oxygen atoms are preferred to passivate the Se vacancies thus Cu interstitial defects explains well metastability of CIGS solar cells. Lattice mismatch and misfit stress between layers in CIGS solar cells can explain the particular effects of CIGS solar cells. The misfits of 35.08° rotated (220/204) CIGS to r-plane (102) MoSe2 layers are 1% ˜ -4% lower than other orientation and the lattice constants of two layers in short direction are matched at Ga composition x=0.35. This explains well the preferred orientation and the maximum efficiency of Ga composition effects. Misfit between CIGS and CdS generated the dislocations in CdS layer as the interface traps. Thermionic emission currents due to interface traps limit the open circuit voltage at high Ga composition. The trap densities were calculated by critical thickness and dislocation spacing and the numerical device simulation results were well matched with the experimental results. A metal oxide broken-gap p-n heterojunction is suggested for tunnel junction for multi-junction polycrystalline solar cells and we examined the characteristics of broken-gap tunnel junction by numerical simulation. Ballistic transport mechanism explains well I-V characteristics of broken-gap junction. P-type Cu2O and n-type In2O3 broken-gap heterojunction is effective with the CIGS tandem solar cells. The junction has linear I-V characteristics with moderate carrier concentration (2x1017 cm-3) and the resistance is lower than GaAs tunnel junction. The efficiency of a CGS/CIS tandem solar cells was 24.1% with buffer layers. And no significant degradations are expected due to broken gap junction.

Assuring long-term reliability of concentrator PV systems

NASA Astrophysics Data System (ADS)

McConnell, R.; Garboushian, V.; Brown, J.; Crawford, C.; Darban, K.; Dutra, D.; Geer, S.; Ghassemian, V.; Gordon, R.; Kinsey, G.; Stone, K.; Turner, G.

2009-08-01

Concentrator PV (CPV) systems have attracted significant interest because these systems incorporate the world's highest efficiency solar cells and they are targeting the lowest cost production of solar electricity for the world's utility markets. Because these systems are just entering solar markets, manufacturers and customers need to assure their reliability for many years of operation. There are three general approaches for assuring CPV reliability: 1) field testing and development over many years leading to improved product designs, 2) testing to internationally accepted qualification standards (especially for new products) and 3) extended reliability tests to identify critical weaknesses in a new component or design. Amonix has been a pioneer in all three of these approaches. Amonix has an internal library of field failure data spanning over 15 years that serves as the basis for its seven generations of CPV systems. An Amonix product served as the test CPV module for the development of the world's first qualification standard completed in March 2001. Amonix staff has served on international standards development committees, such as the International Electrotechnical Commission (IEC), in support of developing CPV standards needed in today's rapidly expanding solar markets. Recently Amonix employed extended reliability test procedures to assure reliability of multijunction solar cell operation in its seventh generation high concentration PV system. This paper will discuss how these three approaches have all contributed to assuring reliability of the Amonix systems.

Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices Including Concepts for The Development of Polycrystalline Multijunctions: Annual Report; 24 August 1998-23 August 1999

DOE Office of Scientific and Technical Information (OSTI.GOV)

Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.

2000-08-25

This report describes results achieved during phase 1 of a three-phase subcontract to develop and understand thin-film solar cell technology associated to CuInSe{sub 2} and related alloys, a-Si and its alloys, and CdTe. Modules based on all these thin films are promising candidates to meet DOE long-range efficiency, reliability, and manufacturing cost goals. The critical issues being addressed under this program are intended to provide the science and engineering basis for the development of viable commercial processes and to improve module performance. The generic research issues addressed are: (1) quantitative analysis of processing steps to provide information for efficient commercial-scalemore » equipment design and operation; (2) device characterization relating the device performance to materials properties and process conditions; (3) development of alloy materials with different bandgaps to allow improved device structures for stability and compatibility with module design; (4) development of improved window/heterojunction layers and contacts to improve device performance and reliability; and (5) evaluation of cell stability with respect to illumination, temperature, and ambient and with respect to device structure and module encapsulation.« less

High Efficiency Multijunction Solar Cells with Finely-Tuned Quantum Wells

NASA Astrophysics Data System (ADS)

Varonides, Argyrios C.

The field of high efficiency (inorganic) photovoltaics (PV) is rapidly maturing in both efficiency goals and cover all cost reduction of fabrication. On one hand, know-how from space industry in new solar cell design configurations and on the other, fabrication cost reduction challenges for terrestrial uses of solar energy, have paved the way to a new generation of PV devices, capable of capturing most of the solar spectrum. For quite a while now, the goal of inorganic solar cell design has been the total (if possible) capture-absorption of the solar spectrum from a single solar cell, designed in such a way that a multiple of incident wavelengths could be simultaneously absorbed. Multi-absorption in device physics indicates parallel existence of different materials that absorb solar photons of different energies. Bulk solid state devices absorb at specific energy thresholds, depending on their respective energy gap (EG). More than one energy gaps would on principle offer new ways of photon absorption: if such a structure could be fabricated, two or more groups of photons could be absorbed simultaneously. The point became then what lattice-matched semiconductor materials could offer such multiple levels of absorption without much recombination losses. It was soon realized that such layer multiplicity combined with quantum size effects could lead to higher efficiency collection of photo-excited carriers. At the moment, the main reason that slows down quantum effect solar cell production is high fabrication cost, since it involves primarily expensive methods of multilayer growth. Existing multi-layer cells are fabricated in the bulk, with three (mostly) layers of lattice-matched and non-lattice-matched (pseudo-morphic) semiconductor materials (GaInP/InGaN etc), where photo-carrier collection occurs in the bulk of the base (coming from the emitter which lies right under the window layer). These carriers are given excess to conduction via tunnel junction (grown between at each interface and connecting the layers in series). This basic idea of a design has proven very successful in recent years, leading to solar cells of efficiency levels well above 30% (Fraunhofer Institute's multi-gap solar cell at 40.8%, and NREL's device at 40.2% respectively). Successful alloys have demonstrated high performance, such as InxGa1 - xP alloys (x (%) of gallium phosphide and (1 - x) (%) of indium phosphide). Other successful candidates, in current use and perpetual cell design consideration, are the lattice-matched GaAs/AlGaAs and InP/GaAs pairs or AlAs/GaAs/GaAs triple layers and alloys, which are heavily used in both solar and the electronics industry.

Sarah Kurtz | NREL

Science.gov Websites

next stage of growth for the PV industry. Participated in the demonstration of the GaInP/GaAs solar photovoltaics (PV), concentrator PV, and PV reliability. Kurtz and NREL colleague Jerry Olson championed the early use of multi-junction solar cells by showing that a top cell of gallium indium phosphide (GaInP

Angle-depended photocurrent characteristics of cascade photoelectric converters on the base of homogeneous semiconductor

NASA Astrophysics Data System (ADS)

Arbuzov, Yuri D.; Evdokimov, Vladimir M.; Shepovalova, Olga V.

2018-05-01

Angle-dependent spectral photoresponse characteristics for theoretically perfect and physically implementable tunnel cascade (multi-junction) photoelectric converters (PC), for example high-voltage planar PV cells, have been studied as functions of technological parameters and number of single PCs in cascade. Angle-dependent spectral photoresponse characteristics values for real cascade silicon structures have been determined in visible and ultraviolet radiation spectra. Characteristic values of radiation incidence angle corresponding to the twofold photocurrent reduction in relation to normal incidence have been found depending on the number of single PCs in cascade, `dead' layer thickness of tunnel junction and photosensitivity of the base PC. The possibility and practicability of solar trackers use in PV systems with proposed PCs under study have been evaluated.

Impact of Solar Array Designs on High Voltage Operations

NASA Technical Reports Server (NTRS)

Brandhorst, Henry W., Jr.; Ferguson, Dale; Piszczor, Mike; ONeill, Mark

2006-01-01

As power levels of advanced spacecraft climb above 25 kW, higher solar array operating voltages become attractive. Even in today s satellites, operating spacecraft buses at 100 V and above has led to arcing in GEO communications satellites, so the issue of spacecraft charging and solar array arcing remains a design problem. In addition, micrometeoroid impacts on all of these arrays can also lead to arcing if the spacecraft is at an elevated potential. For example, tests on space station hardware disclosed arcing at 75V on anodized A1 structures that were struck with hypervelocity particles in Low Earth Orbit (LEO) plasmas. Thus an understanding of these effects is necessary to design reliable high voltage solar arrays of the future, especially in light of the Vision for Space Exploration of NASA. In the future, large GEO communication satellites, lunar bases, solar electric propulsion missions, high power communication systems around Mars can lead to power levels well above 100 kW. As noted above, it will be essential to increase operating voltages of the solar arrays well above 80 V to keep the mass of cabling needed to carry the high currents to an acceptable level. Thus, the purpose of this paper is to discuss various solar array approaches, to discuss the results of testing them at high voltages, in the presence of simulated space plasma and under hypervelocity impact. Three different types of arrays will be considered. One will be a planar array using thin film cells, the second will use planar single or multijunction cells and the last will use the Stretched Lens Array (SLA - 8-fold concentration). Each of these has different approaches for protection from the space environment. The thin film cell based arrays have minimal covering due to their inherent radiation tolerance, conventional GaAs and multijunction cells have the traditional cerium-doped microsheet glasses (of appropriate thickness) that are usually attached with Dow Corning DC 93-500 silicone adhesive. In practice, these cover glasses and adhesive do not cover the cell edges. Finally, in the SLA, the entire cell and cell edges are fully encapsulated by a cover glass that overhangs the cell perimeter and the silicone adhesive covers the cell edges providing a sealed environment. These three types of blanket technology have been tested at GRC and Auburn. The results of these tests will be described. For example, 15 modules composed of four state-of-the-art 2x4 cm GaAs solar cells with 150 pm cover glasses connected in two-cell series strings were tested at high voltage, in plasma under hypervelocity impact. A picture of one of the modules is shown in figure 1. These were prepared by standard industry practice from a major supplier and had efficiencies above 18%. The test results and other fabrication factors that influenced the tests will be presented. In addition, results for SLA segments tested under the same conditions will be presented. Testing of thin film blankets at GRC will also be presented. Figure 1 : Typical GaAs Solar Cell Module These results will show significant differences in resistance to arcing that are directly related to array design and manufacturing procedures. Finally, the approaches for mitigating the problems uncovered by these tests will be described. These will lay the foundation for future higher voltage array operation, even including voltages above 300-600 V for direct drive SEP applications.

Interaction of ultrashort laser pulses and silicon solar cells under short circuit conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mundus, M., E-mail: markus.mundus@ise.fraunhofer.de; Giesecke, J. A.; Fischer, P.

Ultrashort pulse lasers are promising tools for numerous measurement purposes. Among other benefits their high peak powers allow for efficient generation of wavelengths in broad spectral ranges and at spectral powers that are orders of magnitude higher than in conventional light sources. Very recently this has been exploited for the establishment of sophisticated measurement facilities for electrical characterization of photovoltaic (PV) devices. As the high peak powers of ultrashort pulses promote nonlinear optical effects they might also give rise to nonlinear interactions with the devices under test that possibly manipulate the measurement outcome. In this paper, we present a comprehensivemore » theoretical and experimental study of the nonlinearities affecting short circuit current (I{sub SC}) measurements of silicon (Si) solar cells. We derive a set of coupled differential equations describing the radiation-device interaction and discuss the nonlinearities incorporated in those. By a semi-analytical approach introducing a quasi-steady-state approximation and integrating a Green's function we solve the system of equations and obtain simulated I{sub SC} values. We validate the theoretical model by I{sub SC} ratios obtained from a double ring resonator setup capable for reproducible generation of various ultrashort pulse trains. Finally, we apply the model to conduct the most prominent comparison of I{sub SC} generated by ultrashort pulses versus continuous illumination. We conclude by the important finding that the nonlinearities induced by ultrashort pulses are negligible for the most common I{sub SC} measurements. However, we also find that more specialized measurements (e.g., of concentrating PV or Si-multijunction devices as well as highly localized electrical characterizations) will be biased by two-photon-absorption distorting the I{sub SC} measurement.« less

Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors

DTIC Science & Technology

2015-08-27

photodiodes with different cutoff wavelengths connected in series with tunnel diodes between adjacent photodiodes. The LEDs optically bias the inactive...perfectly conductive n-CdTe/p-InSb tunnel junction. 15. SUBJECT TERMS optical biasing; multi-junction photodetectors; triple-junction solar cell...during this project, including initial demonstrations of optical addressing, tunnel junction studies and multicolor device characterization

Indoor and outdoor characterization of the HIRL prototype: An innovative highly integrated receiverless LCPV concept using multijunction cells

NASA Astrophysics Data System (ADS)

Weick, Clément; De Betelu, Romain; Tauzin, Aurélie; Baudrit, Mathieu

2017-09-01

Concentrator photovoltaic (CPV) modules are composed of many components and interfaces, which require complex assembling processes, resulting in fabrication complexity and often lack of reliability. The present work addresses these issues, by proposing an innovative low concentration photovoltaic (LCPV) concept. In particular, the purpose here is to develop a module with a high level of integration by lowering the number of components and interfaces. The mirror used as the concentrator optic is multifunctional, as it combines thermal, structural and optical function. Moreover, the proposed design claims to demonstrate the applicability of reliable flat PV processes (such as lamination and cells interconnections), for the manufacturing of this LCPV module. The paper describes both indoor and outdoor characterization of a new prototype. Performances by means of IV curves tracing will be discussed regarding the losses distribution within the optical chain.

Inverted Three-Junction Tandem Thermophotovoltaic Modules

NASA Technical Reports Server (NTRS)

Wojtczuk, Steven

2012-01-01

An InGaAs-based three-junction (3J) tandem thermophotovoltaic (TPV) cell has been investigated to utilize more of the blackbody spectrum (from a 1,100 C general purpose heat source GPHS) efficiently. The tandem consists of three vertically stacked subcells, a 0.74-eV InGaAs cell, a 0.6- eV InGaAs cell, and a 0.55-eV InGaAs cell, as well as two interconnecting tunnel junctions. A greater than 20% TPV system efficiency was achieved by another group with a 1,040 C blackbody using a single-bandgap 0.6- eV InGaAs cell MIM (monolithic interconnected module) (30 lateral junctions) that delivered about 12 V/30 or 0.4 V/junction. It is expected that a three-bandgap tandem MIM will eventually have about 3 this voltage (1.15 V) and about half the current. A 4 A/cm2 would be generated by a single-bandgap 0.6-V InGaAs MIM, as opposed to the 2 A/cm2 available from the same spectrum when split among the three series-connected junctions in the tandem stack. This would then be about a 50% increase (3xVoc, 0.5xIsc) in output power if the proposed tandem replaced the single- bandgap MIM. The advantage of the innovation, if successful, would be a 50% increase in power conversion efficiency from radioisotope heat sources using existing thermophotovoltaics. Up to 50% more power would be generated for radioisotope GPHS deep space missions. This type of InGaAs multijunction stack could be used with terrestrial concentrator solar cells to increase efficiency from 41 to 45% or more.

Optimization of concentrator photovoltaic solar cell performance through photonic engineering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harris, James

The goal of this program was to incorporate two new and innovative design concepts into the design and production of CPV cells that have near zero added cost, yet significantly increase the operational efficiency of CPV modules. The program focused developing luminescent coupling effects and radiative cooling layers to increase efficiency and suppress CPV module power losses due to spectral variations and heating. The major results of the program were: 1) The optics of three commercial refractive (Fresnel) concentrators were characterized and prevent application of radiative cooling concepts due to strong mid-IR absorption (4-12µm) required to effectively radiate blackbody radiationmore » from the cells and provide cooling. Investigation of alternative materials for the concentrator lenses produced only undesirable options—materials with reasonable mid-IR transmission for cooling only had about 30-40 visible transmission, thus reducing incident sunlight by >50%. While our investigation was somewhat limited, our work suggests that the only viable concentrator system that can incorporate radiative cooling utilizes reflective optics. 2) With limited ability to test high concentration CPV cells (requires outdoor testing), we acquired both semi-crystalline and crystalline Si cells and tested them in our outdoor facility and demonstrated 4°C cooling using a simple silica layer coating on the cells. 3) Characterizing Si cells in the IR associated with radiative cooling, we observed very significant near-IR absorption that increases the cell operating temperature by a similar amount, 4-5°C. By appropriate surface layer design, one can produce a layer that is highly reflective in the near-IR (1.5-4µm) and highly emissive in the mid-IR (5-15µm), thus reducing cell operational temperature by 10°C and increasing efficiency by ~1% absolute. The radiative cooling effect in c-Si solar cells might be further improved by providing a higher thermal conductive elastomer for securing the cover glass on top of the AR-coating. Since it was never imagined that the front surface would provide any cooling for solar cells, thermal conductivity of this elastomer was never a design consideration, but, improving the conductivity could decrease cell temperature by another 3-4°C. The combined effect could be an ~1.5% absolute increase in cell and module efficiency, a very significant improvement. 4) Developed a numerical model to explore dependence of luminescent coupling efficiency over a broad range of operating conditions. We developed a novel method and facility to experimentally measure the luminescent coupling that can be used to confirm the dependence of luminescent coupling on multi-junction cell design parameters.« less

High-Volume Production of Lightweight Multijunction Solar Cells

NASA Technical Reports Server (NTRS)

Youtsey, Christopher

2015-01-01

MicroLink Devices, Inc., has transitioned its 6-inch epitaxial lift-off (ELO) solar cell fabrication process into a manufacturing platform capable of sustaining large-volume production. This Phase II project improves the ELO process by reducing cycle time and increasing the yield of large-area devices. In addition, all critical device fabrication processes have transitioned to 6-inch production tool sets designed for volume production. An emphasis on automated cassette-to-cassette and batch processes minimizes operator dependence and cell performance variability. MicroLink Devices established a pilot production line capable of at least 1,500 6-inch wafers per month at greater than 80 percent yield. The company also increased the yield and manufacturability of the 6-inch reclaim process, which is crucial to reducing the cost of the cells.

High-voltage solar-cell chip

NASA Technical Reports Server (NTRS)

Kapoor, V. J.; Valco, G. J.; Skebe, G. G.; Evans, J. C., Jr.

1985-01-01

Integrated circuit technology has been successfully applied to the design and fabrication of 0.5 x 0.5-cm planar multijunction solar-cell chips. Each of these solar cells consisted of six voltage-generating unit cells monolithically connected in series and fabricated on a 75-micron-thick, p-type, single crystal, silicon substrate. A contact photolithic process employing five photomask levels together with a standard microelectronics batch-processing technique were used to construct the solar-cell chip. The open-circuit voltage increased rapidly with increasing illumination up to 5 AM1 suns where it began to saturate at the sum of the individual unit-cell voltages at a maximum of 3.0 V. A short-circuit current density per unit cell of 240 mA/sq cm was observed at 10 AM1 suns.

Development of Manufacturable Process to Deposit Metal Matrix Composites on Inverted Metamorphic Multijunction Solar Cells

DTIC Science & Technology

2015-01-14

substrates using a titanium adhesion layer, and (3) characterized hardness and electrical conductivity of plated silver before and after rapid thermal...layer composite films. We observed that the silver erosion during carboxylated carbon nanotube deposition leads to significant porosity within the...composite films. We plan to explore amine-terminated carbon nanotubes in the near future to eliminate the porosity and study how different

Development of a Novel Hybrid Multi-Junction Architecture for Silicon Solar Cells

DTIC Science & Technology

2015-03-26

W Watts KOH Potassium Hydroxide xj Junction depth k Thermal conductivity z Normal distance l Conductor length σ Stefan...outermost orbit [9]. A material conducts electricity when its valence electrons move into the conduction band and become conductor electrons. Conductor ...become a conductor , it must absorb enough energy to overcome the band gap, which is the energy difference between the valence band and the conduction

Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications

NASA Astrophysics Data System (ADS)

Reyes, D. F.; Braza, V.; Gonzalo, A.; Utrilla, A. D.; Ulloa, J. M.; Ben, T.; González, D.

2018-06-01

GaAsSbN dilute nitrides are potential candidates for integration in high-performance multi-junction solar cells due to the bandgap tunability in the 1.0-1.15 eV range and the possibility to match the lattice constant to the GaAs substrates. Recently, the use of GaAsSb/GaAsN superlattices (SLs) has been shown as an effective way to enhance photovoltaic efficiency as compared to the quaternary counterparts. Here we apply a combination of HR-XRD and cross-sectional (S)TEM techniques together with theoretical calculations to analyse the compositional distribution in GaAsSb/GaAsN SLs with different periodicity. The measurements of compositional profiles indicate that Sb is strongly segregated into the GaAsN layers while N remains confined where it is deposited. We demonstrate that the Sb profiles run as a shark-fin waveform that can be precisely described with a one-dimensional model where segregation of the supplied Sb is promoted by a three-layer fluid exchange mechanism. Moreover, the role played by the periodicity in the effectiveness of the Sb incorporation adds a new level of complexity. The modelling of Sb segregation in the GaAsSb/GaAsN SLs system could be used to carry out more precise pseudopotential calculations on the band structure in order to understand and predict their electrical and optical behaviour.

DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

NASA Technical Reports Server (NTRS)

Li, S. B.; Choi, C. G.; Loo, R. Y.

1985-01-01

The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

Advances and recent trends in heterogeneous photo(electro)-catalysis for solar fuels and chemicals.

PubMed

Highfield, James

2015-04-15

In the context of a future renewable energy system based on hydrogen storage as energy-dense liquid alcohols co-synthesized from recycled CO2, this article reviews advances in photocatalysis and photoelectrocatalysis that exploit solar (photonic) primary energy in relevant endergonic processes, viz., H2 generation by water splitting, bio-oxygenate photoreforming, and artificial photosynthesis (CO2 reduction). Attainment of the efficiency (>10%) mandated for viable techno-economics (USD 2.00-4.00 per kg H2) and implementation on a global scale hinges on the development of photo(electro)catalysts and co-catalysts composed of earth-abundant elements offering visible-light-driven charge separation and surface redox chemistry in high quantum yield, while retaining the chemical and photo-stability typical of titanium dioxide, a ubiquitous oxide semiconductor and performance "benchmark". The dye-sensitized TiO2 solar cell and multi-junction Si are key "voltage-biasing" components in hybrid photovoltaic/photoelectrochemical (PV/PEC) devices that currently lead the field in performance. Prospects and limitations of visible-absorbing particulates, e.g., nanotextured crystalline α-Fe2O3, g-C3N4, and TiO2 sensitized by C/N-based dopants, multilayer composites, and plasmonic metals, are also considered. An interesting trend in water splitting is towards hydrogen peroxide as a solar fuel and value-added green reagent. Fundamental and technical hurdles impeding the advance towards pre-commercial solar fuels demonstration units are considered.

Diketopyrrolopyrrole Polymers for Organic Solar Cells.

PubMed

Li, Weiwei; Hendriks, Koen H; Wienk, Martijn M; Janssen, René A J

2016-01-19

Conjugated polymers have been extensively studied for application in organic solar cells. In designing new polymers, particular attention has been given to tuning the absorption spectrum, molecular energy levels, crystallinity, and charge carrier mobility to enhance performance. As a result, the power conversion efficiencies (PCEs) of solar cells based on conjugated polymers as electron donor and fullerene derivatives as electron acceptor have exceeded 10% in single-junction and 11% in multijunction devices. Despite these efforts, it is notoriously difficult to establish thorough structure-property relationships that will be required to further optimize existing high-performance polymers to their intrinsic limits. In this Account, we highlight progress on the development and our understanding of diketopyrrolopyrrole (DPP) based conjugated polymers for polymer solar cells. The DPP moiety is strongly electron withdrawing and its polar nature enhances the tendency of DPP-based polymers to crystallize. As a result, DPP-based conjugated polymers often exhibit an advantageously broad and tunable optical absorption, up to 1000 nm, and high mobilities for holes and electrons, which can result in high photocurrents and good fill factors in solar cells. Here we focus on the structural modifications applied to DPP polymers and rationalize and explain the relationships between chemical structure and organic photovoltaic performance. The DPP polymers can be tuned via their aromatic substituents, their alkyl side chains, and the nature of the π-conjugated segment linking the units along the polymer chain. We show that these building blocks work together in determining the molecular conformation, the optical properties, the charge carrier mobility, and the solubility of the polymer. We identify the latter as a decisive parameter for DPP-based organic solar cells because it regulates the diameter of the semicrystalline DPP polymer fibers that form in the photovoltaic blends with fullerenes via solution processing. The width of these fibers and the photon energy loss, defined as the energy difference between optical band gap and open-circuit voltage, together govern to a large extent the quantum efficiency for charge generation in these blends and thereby the power conversion efficiency of the photovoltaic devices. Lowering the photon energy loss and maintaining a high quantum yield for charge generation is identified as a major pathway to enhance the performance of organic solar cells. This can be achieved by controlling the structural purity of the materials and further control over morphology formation. We hope that this Account contributes to improved design strategies of DPP polymers that are required to realize new breakthroughs in organic solar cell performance in the future.

Polycrystalline-thin-film thermophotovoltaic cells

NASA Astrophysics Data System (ADS)

Dhere, Neelkanth G.

1996-02-01

Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto-electronic (infrared detectors, lasers, and optical communications) technologies. Low bandgaps and larger fluences employed in TPV cells result in very high current densities which make it difficult to collect the current effectively. Techniques for laser and mechanical scribing, integral interconnection, and multi-junction tandem structures which have been fairly well developed for thin-film PV solar cells could be further refined for enhancing the voltages from TPV modules. Thin-film TPV cells may be deposited on metals or back-surface reflectors. Spectral control elements such as indium-tin oxide or tin oxide may be deposited directly on the TPV convertor. It would be possible to reduce the cost of TPV technologies based on single-crystal materials being developed at present to the range of US 2-5 per watt so as to be competitive in small to medium size commercial applications. However, a further cost reduction to the range of US ¢ 35- 1 per watt to reach the more competitive large-scale residential, consumer, and hybrid-electric car markets would be possible only with the polycrystalline-thin film TPV cells.

Investigation of carrier escape and recombination dynamics in GaAsN/GaAs superlattice and resonantly coupled quantum well solar cells

NASA Astrophysics Data System (ADS)

Kharel, Khim; Freundlich, Alexandre

2018-02-01

III-V multijunction devices that incorporate a dilute nitride 1-1.2 eV bottom cell have already demonstrated conversion efficiencies of about 44% under high sunlight concentration (942 Suns). However, the poor minority carrier properties of dilute nitride have, thus far, prevented the full realization of the practical potential for tandem configuration (>40% 1 sun, and >50% at 500X and above). To overcome this shortcoming, our group, over the past years, have focused on dilute nitride-based devices where the degraded minority carrier diffusion length has a minimal impact on the device performance. We have shown that the incorporation of resonantly coupled GaAsN/GaP multi-quantum wells in the intrinsic region of p-i-n GaAs cells allows both a significant sub-GaAs-bandgap photon harvesting while maintaining a high open circuit voltage. Here, in order to gain a better understanding of photo-generated carrier escape and recombination mechanisms in these devices and further optimize the performance, we examine optical and electrical properties of such devices using various characterization techniques such as: photoluminescence (PL), modulated photo-reflectance (PR), photo-current (PC) as well as current-voltage (IV) measurements under dark or illuminated conditions. The temperature dependent analysis enables us to modulate and freezes carrier thermalization phenomena, while simultaneous measurement of photogenerated carrier extraction (SR) and recombination's (PL) as a function of the applied load (bias) enables a close correlation between the evolution of I-V characteristics and the physics at play. Next, typical temperature and bias dependent activation energies reveal interesting details about carrier escape, intra-cells coupling and recombination sequences.

Solar Photovoltaics Technology: The Revolution Begins . . .

NASA Astrophysics Data System (ADS)

Kazmerski, Lawrence

2009-11-01

The prospects of current and coming solar-photovoltaic (PV) technologies are envisioned, arguing this solar-electricity source is at a tipping point in the complex worldwide energy outlook. The emphasis of this presentation is on R&D advances (cell, materials, and module options), with indications of the limitations and strengths of crystalline (Si and GaAs) and thin-film (a-Si:H, Si, Cu(In,Ga)(Se,S)2, CdTe). The contributions and technological pathways for now and near-term technologies (silicon, III-Vs, and thin films) and status and forecasts for next- generation PV (organics, nanotechnologies, non-conventional junction approaches) are evaluated. Recent advances in concentrators with efficiencies headed toward 50%, new directions for thin films (20% and beyond), and materials/device technology issues are discussed in terms of technology progress. Insights into technical and other investments needed to tip photovoltaics to its next level of contribution as a significant clean-energy partner in the world energy portfolio. The need for R&D accelerating the now and imminent (evolutionary) technologies balanced with work in mid-term (disruptive) approaches is highlighted. Moreover, technology progress and ownership for next generation solar PV mandates a balanced investment in research on longer-term (the revolution needs revolutionary approaches to sustain itself) technologies (quantum dots, multi-multijunctions, intermediate-band concepts, nanotubes, bio-inspired, thermophotonics, solar hydrogen. . . ) having high-risk, but extremely high performance and cost returns for our next generations of energy consumers. Issues relating to manufacturing are explored-especially with the requirements for the next-generation technologies. This presentation provides insights into how this technology has developed-and where the R&D investments should be made and we can expect to be by this mid-21st century.

Optical and thermal simulation for wide acceptance angle CPV module

NASA Astrophysics Data System (ADS)

Ahmad, Nawwar; Ota, Yasuyuki; Araki, Kenji; Lee, Kan-Hua; Yamaguchi, Masafumi; Nishioka, Kensuke

2017-09-01

Concentrator photovoltaic (CPV) technology has the potential to decrease the cost of systems in the near future by using less expensive optical elements in the system which replace the receiving surface aperture and concentrate the sunlight onto small solar cells. One of the main concerns of CPV is the need for high precision tracking system and the relation to the acceptance angle. In this paper, we proposed a CPV module with concentration ratio larger than 100 times and wide acceptance angle. An optical simulation for the module with S-TIM2 glass as a lens material was conducted to estimate the optical performance of the module. Thermal and electrical simulation was also conducted using COMSOL Multiphysics and SPICE respectively to evaluate the working temperature and electrical characteristics of the multijunction solar cell under concentration conditions.

Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Deen, D. A.; Storm, D. F.; Bass, R.; Meyer, D. J.; Katzer, D. S.; Binari, S. C.; Lacis, J. W.; Gougousi, T.

2011-01-01

AlN/GaN heterostructures with a 3.5 nm AlN cap have been grown by molecular beam epitaxy followed by a 6 nm thick atomic layer deposited Ta2O5 film. Transistors fabricated with 150 nm length gates showed drain current density of 1.37 A/mm, transconductance of 315 mS/mm, and sustained drain-source biases up to 96 V while in the off-state before destructive breakdown as a result of the Ta2O5 gate insulator. Terman's method has been modified for the multijunction capacitor and allowed the measurement of interface state density (˜1013 cm-2 eV-1). Small-signal frequency performance of 75 and 115 GHz was obtained for ft and fmax, respectively.

Electrostatic Discharge Test of Multi-Junction Solar Array Coupons After Combined Space Environmental Exposures

NASA Technical Reports Server (NTRS)

Wright, Kenneth H.; Schneider, Todd; Vaughn, Jason; Hoang, Bao; Funderburk, Victor V.; Wong, Frankie; Gardiner, George

2010-01-01

A set of multi-junction GaAs/Ge solar array test coupons were subjected to a sequence of 5-year increments of combined environmental exposure tests. The test coupons capture an integrated design intended for use in a geosynchronous (GEO) space environment. A key component of this test campaign is conducting electrostatic discharge (ESD) tests in the inverted gradient mode. The protocol of the ESD tests is based on the ISO/CD 11221, the ISO standard for ESD testing on solar array panels. This standard is currently in its final review with expected approval in 2010. The test schematic in the ISO reference has been modified with Space System/Loral designed circuitry to better simulate the on-orbit operational conditions of its solar array design. Part of the modified circuitry is to simulate a solar array panel coverglass flashover discharge. All solar array coupons used in the test campaign consist of 4 cells. The ESD tests are performed at the beginning of life (BOL) and at each 5-year environment exposure point. The environmental exposure sequence consists of UV radiation, electron/proton particle radiation, thermal cycling, and ion thruster plume. This paper discusses the coverglass flashover simulation, ESD test setup, and the importance of the electrical test design in simulating the on-orbit operational conditions. Results from 5th-year testing are compared to the baseline ESD characteristics determined at the BOL condition.

Impact of spectral irradiance distribution and temperature on the outdoor performance of concentrator photovoltaic system

NASA Astrophysics Data System (ADS)

Husna, Husyira Al; Shibata, Naoki; Sawano, Naoki; Ueno, Seiya; Ota, Yasuyuki; Minemoto, Takashi; Araki, Kenji; Nishioka, Kensuke

2013-09-01

Multi-junction solar cell is designed to have considerable effect towards the solar spectrum distribution so that the maximum solar radiation could be absorbed hence, enhancing the energy conversion efficiency of the cell. Due to its application in CPV system, the system's characteristics are more sensitive to environmental factor in comparison to flat-plate PV system which commonly equipped with Si-based solar cell. In this paper, the impact of environmental factors i.e. average photon energy (APE) and temperature of solar cell (Tcell) towards the performance of the tracking type CPV system were discussed. A year data period of direct spectral irradiance, cell temperature, and power output which recorded from November 2010 to October 2011 at a CPV system power generator plant located at Miyazaki, Japan was used in this study. The result showed that most frequent condition during operation was at APE = 1.87±0.005eV, Tcell = 65±2.5°C with performance ratio of 83.9%. Furthermore, an equivalent circuit simulation of a CPV subsystem in module unit was conducted in order to investigate the influence of environmental factors towards the performance of the module.

Terra Flexible Blanket Solar Array Deployment, On-Orbit Performance and Future Applications

NASA Technical Reports Server (NTRS)

Kurland, Richard; Schurig, Hans; Rosenfeld, Mark; Herriage, Michael; Gaddy, Edward; Keys, Denney; Faust, Carl; Andiario, William; Kurtz, Michelle; Moyer, Eric;

InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hashem, Islam E.; Zachary Carlin, C.; Hagar, Brandon G.

2016-03-07

Raising the efficiency ceiling of multi-junction solar cells (MJSCs) through the use of more optimal band gap configurations of next-generation MJSC is crucial for concentrator and space systems. Towards this goal, we propose two strain balanced multiple quantum well (SBMQW) structures to tune the bandgap of InGaP-based solar cells. These structures are based on In{sub x}Ga{sub 1−x}As{sub 1−z}P{sub z}/In{sub y}Ga{sub 1−y}P (x > y) and In{sub x}Ga{sub 1−x}P/In{sub y}Ga{sub 1−y}P (x > y) well/barrier combinations, lattice matched to GaAs in a p-i-n solar cell device. The bandgap of In{sub x}Ga{sub 1−x}As{sub 1−z}P{sub z}/In{sub y}Ga{sub 1−y}P can be tuned from 1.82 to 1.65 eV by adjustingmore » the well composition and thickness, which promotes its use as an efficient subcell for next generation five and six junction photovoltaic devices. The thicknesses of wells and barriers are adjusted using a zero net stress balance model to prevent the formation of defects. Thin layers of InGaAsP wells have been grown thermodynamically stable with compositions within the miscibility gap for the bulk alloy. The growth conditions of the two SBMQWs and the individual layers are reported. The structures are characterized and analyzed by optical microscopy, X-ray diffraction, photoluminescence, current-voltage characteristics, and spectral response (external quantum efficiency). The effect of the well number on the excitonic absorption of InGaAsP/InGaP SBMQWs is discussed and analyzed.« less

Advances in Single and Multijunction III-V Photovoltaics on Silicon for Space Power

NASA Technical Reports Server (NTRS)

Wilt, David M.; Fitzgerald, Eugene A.; Ringel, Steven A.

2005-01-01

A collaborative research effort at MIT, Ohio State University and NASA has resulted in the demonstration of record quality gallium arsenide (GaAs) based single junction photovoltaic devices on silicon (Si) substrates. The ability to integrate highly efficient, radiation hard III-V based devices on silicon offers the potential for dramatic reductions in cell mass (approx.2x) and increases in cell area. Both of these improvements offer the potential for dramatic reductions in the cost of on-orbit electrical power. Recently, lattice matched InGaP/GaAs and metamorphic InGaP/InGaAs dual junction solar cells were demonstrated by MBE and OMVPE, respectively. Single junction GaAs on Si devices have been integrated into a space flight experiment (MISSES), scheduled to be launched to the International Space Station in March of 2005. I-V performance data from the GaAs/Si will be collected on-orbit and telemetered to ground stations daily. Microcracks in the GaAs epitaxial material, generated because of differences in the thermal expansion coefficient between GaAs and Si, are of concern in the widely varying thermal environment encountered in low Earth orbit. Ground based thermal life cycling (-80 C to + 80 C) equivalent to 1 year in LEO has been conducted on GaAs/Si devices with no discernable degradation in device performance, suggesting that microcracks may not limit the ability to field GaAs/Si in harsh thermal environments. Recent advances in the development and testing of III-V photovoltaic devices on Si will be presented.

Solar electric propulsion for Mars transport vehicles

NASA Technical Reports Server (NTRS)

Hickman, J. M.; Curtis, H. B.; Alexander, S. W.; Gilland, J. H.; Hack, K. J.; Lawrence, C.; Swartz, C. K.

1990-01-01

Solar electric propulsion (SEP) is an alternative to chemical and nuclear powered propulsion systems for both piloted and unpiloted Mars transport vehicles. Photovoltaic solar cell and array technologies were evaluated as components of SEP power systems. Of the systems considered, the SEP power system composed of multijunction solar cells in an ENTECH domed fresnel concentrator array had the least array mass and area. Trip times to Mars optimized for minimum propellant mass were calculated. Additionally, a preliminary vehicle concept was designed.

Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

DOEpatents

Yang, Liyou

1993-10-26

A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

NASA Capabilities That Could Impact Terrestrial Smart Grids of the Future

NASA Technical Reports Server (NTRS)

Beach, Raymond F.

2015-01-01

Incremental steps to steadily build, test, refine, and qualify capabilities that lead to affordable flight elements and a deep space capability. Potential Deep Space Vehicle Power system characteristics: power 10 kilowatts average; two independent power channels with multi-level cross-strapping; solar array power 24 plus kilowatts; multi-junction arrays; lithium Ion battery storage 200 plus ampere-hours; sized for deep space or low lunar orbit operation; distribution120 volts secondary (SAE AS 5698); 2 kilowatt power transfer between vehicles.

New type of multijunction thermopile IR detector

NASA Astrophysics Data System (ADS)

Sun, Tietun; Guo, Lihui

1996-09-01

A newly designed thin-film thermopile infrared detector, which as an absorption layer and a sensitive area on two sides are fabricated using integrated-circuit technology. The device uses a series-connected thermocouples array whose `hot' junction are supported on a thin Myler film of 1 - 3 micrometers thickness. By a special method of fasting the shadow mask, the thermopile with 48 Bi-Sb couples for 2 X 2 mm(superscript 2) area produces a responsivity of 50 - 70 V/W and relaxation time of about 70 ms.

Space Photovoltaic Research and Technology Conference

NASA Technical Reports Server (NTRS)

1991-01-01

The Eleventh Space Photovoltaic Research and Technology conference was held at NASA Lewis Research Center from May 7 to 9, 1991. The papers and workshop summaries presented here report remarkable progress on a wide variety of approaches in space photovoltaics, both near and far term applications. Papers were presented in a variety of technical areas, including multijunction cell technology, GaAs and InP cells, system studies, cell and array development, and photovoltaics for conversion of laser radiation. Three workshops were held to discuss thin film cell development, III-V cell development, and space environmental effects.

Nanostructured Solar Cells.

PubMed

Chen, Guanying; Ning, Zhijun; Ågren, Hans

2016-08-09

We are glad to announce the Special Issue "Nanostructured Solar Cells", published in Nanomaterials. This issue consists of eight articles, two communications, and one review paper, covering major important aspects of nanostructured solar cells of varying types. From fundamental physicochemical investigations to technological advances, and from single junction solar cells (silicon solar cell, dye sensitized solar cell, quantum dots sensitized solar cell, and small molecule organic solar cell) to tandem multi-junction solar cells, all aspects are included and discussed in this issue to advance the use of nanotechnology to improve the performance of solar cells with reduced fabrication costs.

Model Comparisons For Space Solar Cell End-Of-Life Calculations

NASA Astrophysics Data System (ADS)

Messenger, Scott; Jackson, Eric; Warner, Jeffrey; Walters, Robert; Evans, Hugh; Heynderickx, Daniel

2011-10-01

Space solar cell end-of-life (EOL) calculations are performed over a wide range of space radiation environments for GaAs-based single and multijunction solar cell technologies. Two general semi-empirical approaches will used to generate these EOL calculation results: 1) the JPL equivalent fluence (EQFLUX) and 2) the NRL displacement damage dose (SCREAM). This paper also includes the first results using the Monte Carlo-based version of SCREAM, called MC- SCREAM, which is now freely available online as part of the SPENVIS suite of programs.

Nano-cones for broadband light coupling to high index substrates

NASA Astrophysics Data System (ADS)

Buencuerpo, J.; Torné, L.; Álvaro, R.; Llorens, J. M.; Dotor, M. L.; Ripalda, J. M.

2016-12-01

The moth-eye structure has been proposed several times as an antireflective coating to replace the standard optical thin films. Here, we experimentally demonstrate the feasibility of a dielectric moth-eye structure as an antireflective coating for high-index substrates, like GaAs. The fabricated photonic crystal has Si3N4 cones in a square lattice, sitting on top of a TiO2 index matching layer. This structure attains 1.4% of reflectance power losses in the operation spectral range of GaAs solar cells (440-870 nm), a 12.5% relative reduction of reflection power losses in comparison with a standard bilayer. The work presented here considers a fabrication process based on laser interference lithography and dry etching, which are compatible with solar cell devices. The experimental results are consistent with scattering matrix simulations of the fabricated structures. In a broader spectral range (400-1800 nm), the simulation estimates that the nanostructure also significantly outperforms the standard bilayer coating (3.1% vs. 4.5% reflection losses), a result of interest for multijunction tandem solar cells.

Integrated Antenna/Solar Array Cell (IA/SAC) System for Flexible Access Communications

NASA Technical Reports Server (NTRS)

Lee, Ricard Q.; Clark, Eric B.; Pal, Anna Maria T.; Wilt, David M.; Mueller, Carl H.

2004-01-01

Present satellite communications systems normally use separate solar cells and antennas. Since solar cells generally account for the largest surface area of the spacecraft, co-locating the antenna and solar cells on the same substrate opens the possibility for a number of data-rate-enhancing communications link architecture that would have minimal impact on spacecraft weight and size. The idea of integrating printed planar antenna and solar array cells on the same surface has been reported in the literature. The early work merely attempted to demonstrate the feasibility by placing commercial solar cells besides a patch antenna. Recently, Integrating multiple antenna elements and solar cell arrays on the same surface was reported for both space and terrestrial applications. The application of photovoltaic solar cell in a planar antenna structure where the radiating patch antenna is replaced by a Si solar cell has been demonstrated in wireless communication systems (C. Bendel, J. Kirchhof and N. Henze, 3rd Would Photovotaic Congress, Osaka, Japan, May 2003). Based on a hybrid approach, a 6x1 slot array with circularly polarized crossdipole elements co-located on the same surface of the solar cells array has been demonstrated (S. Vaccaro, J. R. Mosig and P. de Maagt, IEEE Trans. Ant. and Propag., Vol. 5 1, No. 8, Aug. 2003). Amorphous silicon solar cells with about 5-10% efficiency were used in these demonstrations. This paper describes recent effort to integrate advanced solar cells with printed planar antennas. Compared to prior art, the proposed WSAC concept is unique in the following ways: 1) Active antenna element will be used to achieve dynamic beam steering; 2) High efficiency (30%) GaAs multi-junction solar cells will be used instead of Si, which has an efficiency of about 15%; 3) Antenna and solar cells are integrated on a common GaAs substrate; and 4) Higher data rate capability. The IA/SAC is designed to operate at X-band (8-12 GH) and higher frequencies Higher operating frequencies enable greater bandwidth and thus higher data transfer rates. The first phase of the effort involves the development of GaAs solar cell MIMs (Monolithically Integrated Module) with a single patch antenna on the opposite side of the substrate. Subsequent work will involve the integration of MIMs and antennas on the same side of the substrate. Results from the phase one efforts will be presented.

Development of a High Efficiency UVR/IRR Coverglass for Triple Junction Solar Cells

NASA Technical Reports Server (NTRS)

Russell, John; Jones, Glenn; Hall, James

2007-01-01

Cover glasses have been a necessary and integral part of space solar arrays since their inception. The main function of the cover glass is to protect the underlying solar cell from the harsh radiation environment of space. They are formed either from fused silica or specially formulated ceria doped glass types that are resistant to radiation damage, for example Pilkington's CMX, CMG, CMO. Solar cells have steadily increased in performance over the past years, from Silicon cells through textured Silicon cells to GaAs cells and the multijunction cells of today. The optimum coverglass solution for each of these cells has been different. The glass itself has also evolved. In some cases it has had its expansion coefficient matched to the cell substrate material, and in addition, added value has been derived from the application of thin film optical coatings to the coverglass. In the majority of cases this has taken the form of a single layer of MgF2 which acts as an antireflection coating. There are also conductive coatings to address electrostatic discharge issues (ESD) and Ultra Violet Reflective (UVR) and Infrared Reflective (IRR) coatings designed for thermal enhancement. Each type of coating can be applied singly or in combination. This paper describes a new type of UVR/IRR (or blue red reflector BRR) specifically designed for triple junction solar cells. For space applications, where radiation is the principal mechanism for removing heat from the satellite, it is the emittance and solar absorptance that primarily determine the temperature of the array. It is therefore essential that any coatings designed to have an effect on the temperature by reducing the solar absorption have a minimal effect on the overall emittance.

In-situ curvature monitoring and X-ray diffraction study of InGaAsP/InGaP quantum wells

DOE PAGES

Sayed, Islam E. H.; Jain, Nikhil; Steiner, Myles A.; ...

2017-06-20

The use of InGaAsP/InGaP quantum well structures is a promising approach for subcells in next generation multi-junction devices due to their tunable bandgap (1.50-1.80 eV) and for being aluminum-free. Despite these potentials, the accumulation of stress during the growth of these structures and high background doping in the quantum well region have previously limited the maximum number of quantum wells and barriers that can be included in the intrinsic region and the sub-bandgap external quantum efficiency to less than 30.0%. In this paper, we report on the use of in-situ curvature monitoring by multi-beam optical stress (MOS) sensor measurements duringmore » the growth of this quantum well structure to monitor the stress evolution in these thin films. A series of In 0.32Ga 0.68AsP/In 0.49Ga 0.51P quantum wells with various arsine to phosphine ratios have been analyzed by in-situ curvature monitoring and X-ray diffraction (XRD) to obtain nearly strain-free lattice matched structures. Sharp interfaces, as indicated by the XRD fringes, have been achieved by using triethyl-gallium and trimethyl-gallium as gallium precursors in InGaAsP and InGaP, respectively, with constant flows of trimethyl-indium and phosphine through the entire quantum well structure. The effect of the substrate miscut on quantum well growth was compared and analyzed using XRD, photoluminescence and time resolved photoluminescence. As a result, a 100 period quantum well device was successfully grown with minimal stress and approximately flat in-situ curvature.« less

In-situ curvature monitoring and X-ray diffraction study of InGaAsP/InGaP quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sayed, Islam E. H.; Jain, Nikhil; Steiner, Myles A.

The use of InGaAsP/InGaP quantum well structures is a promising approach for subcells in next generation multi-junction devices due to their tunable bandgap (1.50-1.80 eV) and for being aluminum-free. Despite these potentials, the accumulation of stress during the growth of these structures and high background doping in the quantum well region have previously limited the maximum number of quantum wells and barriers that can be included in the intrinsic region and the sub-bandgap external quantum efficiency to less than 30.0%. In this paper, we report on the use of in-situ curvature monitoring by multi-beam optical stress (MOS) sensor measurements duringmore » the growth of this quantum well structure to monitor the stress evolution in these thin films. A series of In 0.32Ga 0.68AsP/In 0.49Ga 0.51P quantum wells with various arsine to phosphine ratios have been analyzed by in-situ curvature monitoring and X-ray diffraction (XRD) to obtain nearly strain-free lattice matched structures. Sharp interfaces, as indicated by the XRD fringes, have been achieved by using triethyl-gallium and trimethyl-gallium as gallium precursors in InGaAsP and InGaP, respectively, with constant flows of trimethyl-indium and phosphine through the entire quantum well structure. The effect of the substrate miscut on quantum well growth was compared and analyzed using XRD, photoluminescence and time resolved photoluminescence. As a result, a 100 period quantum well device was successfully grown with minimal stress and approximately flat in-situ curvature.« less

The Extrapolation of High Altitude Solar Cell I(V) Characteristics to AM0

NASA Technical Reports Server (NTRS)

Snyder, David B.; Scheiman, David A.; Jenkins, Phillip P.; Reinke, William; Blankenship, Kurt; Demers, James

2007-01-01

The high altitude aircraft method has been used at NASA GRC since the early 1960's to calibrate solar cell short circuit current, ISC, to Air Mass Zero (AMO). This method extrapolates ISC to AM0 via the Langley plot method, a logarithmic extrapolation to 0 air mass, and includes corrections for the varying Earth-Sun distance to 1.0 AU and compensating for the non-uniform ozone distribution in the atmosphere. However, other characteristics of the solar cell I(V) curve do not extrapolate in the same way. Another approach is needed to extrapolate VOC and the maximum power point (PMAX) to AM0 illumination. As part of the high altitude aircraft method, VOC and PMAX can be obtained as ISC changes during the flight. These values can then the extrapolated, sometimes interpolated, to the ISC(AM0) value. This approach should be valid as long as the shape of the solar spectra in the stratosphere does not change too much from AMO. As a feasibility check, the results are compared to AMO I(V) curves obtained using the NASA GRC X25 based multi-source simulator. This paper investigates the approach on both multi-junction solar cells and sub-cells.

Terra Flexible Blanket Solar Array Deployment, On-Orbit Performance and Future Applications

NASA Technical Reports Server (NTRS)

Kurland, Richard; Schurig, Hans; Rosenfeld, Mark; Herriage, Michael; Gaddy, Edward; Keys, Denney; Faust, Carl; Andiario, William; Kurtz, Michelle; Moyer, Eric;

Photovoltaic reciprocity and quasi-Fermi level splitting in nanostructure-based solar cells (Conference Presentation)

NASA Astrophysics Data System (ADS)

Aeberhard, Urs

2017-04-01

The photovoltaic reciprocity theory relates the electroluminescence spectrum of a solar cell under applied bias to the external photovoltaic quantum efficiency of the device as measured at short circuit conditions [1]. So far, the theory has been verified for a wide range of devices and material systems and forms the basis of a growing number of luminesecence imaging techniques used in the characterization of photovoltaic materials, cells and modules [2-5]. However, there are also some examples where the theory fails, such as in the case of amorphous silicon. In our contribution, we critically assess the assumptions made in the derivation of the theory and compare its predictions with rigorous formal relations as well as numerical computations in the framework of a comprehensive quantum-kinetic theory of photovoltaics [6] as applied to ultra-thin absorber architectures [7]. One of the main applications of the photovoltaic reciprocity relation is the determination of quasi-Fermi level splittings (QFLS) in solar cells from the measurement of luminescence. In nanostructure-based photovoltaic architectures, the determination of QFLS is challenging, but instrumental to assess the performance potential of the concepts. Here, we use our quasi-Fermi level-free theory to investigate existence and size of QFLS in quantum well and quantum dot solar cells. [1] Uwe Rau. Reciprocity relation between photovoltaic quantum efficiency and electrolumines- cent emission of solar cells. Phys. Rev. B, 76(8):085303, 2007. [2] Thomas Kirchartz and Uwe Rau. Electroluminescence analysis of high efficiency cu(in,ga)se2 solar cells. J. Appl. Phys., 102(10), 2007. [3] Thomas Kirchartz, Uwe Rau, Martin Hermle, Andreas W. Bett, Anke Helbig, and Jrgen H. Werner. Internal voltages in GaInP-GaInAs-Ge multijunction solar cells determined by electro- luminescence measurements. Appl. Phys. Lett., 92(12), 2008. [4] Thomas Kirchartz, Anke Helbig, Wilfried Reetz, Michael Reuter, Jürgen H. Werner, and Uwe Rau. Reciprocity between electroluminescence and quantum efficiency used for the characterization of silicon solar cells. Prog. Photovolt: Res. Appl., 17(6):394-402, 2009. [5] U. Hoyer, M. Wagner, Th. Swonke, J. Bachmann, R. Auer, A. Osvet, and C. J. Brabec. Electroluminescence imaging of organic photovoltaic modules. Appl. Phys. Lett., 97(23), 2010. [6] U. Aeberhard. Theory and simulation of quantum photovoltaic devices based on the non-equilibrium Greens function formalism. J. Comput. Electron., 10:394-413, 2011. [7] U. Aeberhard. Simulation of ultrathin solar cells beyond the limits of the semiclassical bulk picture. IEEE J. Photovolt., 6(3):654-660, 2016.

Ultra-Lightweight Hybrid Thin-Film Solar Cells: A Survey of Enabling Technologies for Space Power Applications

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; McNatt, Jeremiah S.; Bailey, Sheila G.; Dickman, John E.; Raffaelle, Ryne P.; Landi, Brian J.; Anctil, Annick; DiLeo, Roberta; Jin, Michael H.-C.; Lee, Chung-Young;

III-V/Active-Silicon Integration for Low-Cost High-Performance Concentrator Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ringel, Steven

This FPACE project was motivated by the need to establish the foundational pathway to achieve concentrator solar cell efficiencies greater than 50%. At such an efficiency, DOE modeling projected that a III-V CPV module cost of $0.50/W or better could be achieved. Therefore, the goal of this project was to investigate, develop and advance a III-V/Si mulitjunction (MJ) CPV technology that can simultaneously address the primary cost barrier for III-V MJ solar cells while enabling nearly ideal MJ bandgap profiles that can yield efficiencies in excess of 50% under concentrated sunlight. The proposed methodology was based on use of ourmore » recently developed GaAsP metamorphic graded buffer as a pathway to integrate unique GaAsP and Ga-rich GaInP middle and top junctions having bandgaps that are adjustable between 1.45 – 1.65 eV and 1.9 – 2.1 eV, respectively, with an underlying, 1.1 eV active Si subcell/substrate. With this design, the Si can be an active component sub-cell due to the semi-transparent nature of the GaAsP buffer with respect to Si as well as a low-cost alternative substrate that is amenable to scaling with existing Si foundry infrastructure, providing a reduction in materials cost and a low cost path to manufacturing at scale. By backside bonding of a SiGe, a path to exceed 50% efficiency is possible. Throughout the course of this effort, an expansive range of new understanding was achieved that has stimulated worldwide efforts in III-V/Si PV R&D that spanned materials development, metamorphic device optimization, and complete III-V/Si monolithic integration. Highlights include the demonstration of the first ideal GaP/Si interfaces grown by industry-standard MOCVD processes, the first high performance metamorphic tunnel junctions designed for III-V/Si integration, record performance of specific metamorphic sub-cell designs, the first fully integrated GaInP/GaAsP/Si double (1.7 eV/1.1 eV) and triple (1.95 eV/1.5 eV/1.1 eV) junction solar cells, the first high performance GaAsP/Si double junction cell, the demonstration of a new method that allow for rapid, quantitative and non-destructive characterization of dislocations (ECCI-electron channeling contrast imaging), the first observation, explanation and solution of the now commonly reported lifetime degradation and recovery phenomena in III-V/Si MOCVD growth, the first demonstration of a high performance SiGe cell with a bandgap of 0.9 eV, amongst other highlights. The impact of the program on the international community has been significant. At the start of our FPACE1 project and for the immediate prior years, 1-2 conference papers/annually were presented at IEEE PVSC. Once FPACE1 commenced in 2011, related efforts sprouted across the US, Europe and Asia and by 2015 there were 26 papers presented on III-V/Si multijunctions in the 2015 PVSC, demonstrating the excitement that was stimulated by the results of this FPACE1 effort.« less

Planar waveguide solar concentrator with couplers fabricated by laser-induced backside wet etching

NASA Astrophysics Data System (ADS)

Zhang, Nikai

Solar radiation can be converted directly into electricity by using the photovoltaic effect, which represents the principle of operation of solar cells. Currently, most solar cells are made of crystalline silicon and have a conversion efficiency of about 20% or less. Multi-junction solar cells, made of III-V compound semiconductors, can have efficiencies in excess of 40%. The main factor that prohibits such high-efficiency technologies from wider acceptance is the cost. An alternative approach to using large-area expensive solar cells is to employ lower cost optics and concentrate the solar radiation to smaller cell area, which is the basic principle of solar concentrators. In this thesis, we consider a solar concentrator module that consists of a combination of a lens array and a slab waveguide with etched conical holes on one side of the waveguide, which are aligned with the lenslets. Sunlight coming through each of these lenslets is focused on the backside of the waveguide, where a coupling structure (an etched cone) is fabricated. This coupler changes the propagation direction of the incident light in such a way that light is guided through total internal reflection (TIR) within the glass slab and eventually reaches a solar cell, which is properly mounted on the side of the slab. The concept of this concentrated photovoltaic (CPV) system is based on a planar light guide solar concentrator module, proposed earlier by another group. This project builds on the original idea by including the following substantial modifications. The lens array is to be made of solid glass by a mold technology and provided to us by our industrial partner, Libbey, Inc., as opposed to silicone on glass technology, in which the lenses are made out of silicone and sit on a glass substrate. The coupling structures are cone-shaped holes etched directly into the solid glass waveguide, as opposed to coupling structures that are formed by addition of polymeric layer and consequent patterning. The fabrication of the etched holes in the glass is proposed to be based on a self-aligned process using a laser-induced backside etching (LIBWE) method, which is discussed in this project and its feasibility is examined. The role of different parameters to the concentration level and the optical efficiency of the CPV system are studied by simulations in ZEMAX (which is a leading optical analysis/design software) using non-sequential ray tracing. The optical efficiency of this design under different light concentration level is studied and discussed. The main contributions of this research consist of a new design of a waveguide-based CPV system which can be made entirely of glass by a low-cost glass fabrication method, and a feasibility study in terms of critical fabrication steps and optical performance.

On-Orbit Measurement of Next Generation Space Solar Cell Technology on the International Space Station

NASA Technical Reports Server (NTRS)

Wolford, David S.; Myers, Matthew G.; Prokop, Norman F.; Krasowski, Michael J.; Parker, David S.; Cassidy, Justin C.; Davies, William E.; Vorreiter, Janelle O.; Piszczor, Michael F.; McNatt, Jeremiah S.

2014-01-01

On-orbit measurements of new photovoltaic (PV) technologies for space power are an essential step in the development and qualification of advanced solar cells. NASA Glenn Research Center will fly and measure several solar cells attached to NASA Goddards Robotic Refueling Mission (RRM), expected to be launched in 2014. Industry and government partners have provided advanced PV devices for evaluation of performance and environmental durability. The experiment is completely self-contained, providing its own power and internal data storage. Several new cell technologies including Inverted Metamorphic Multi-junction and four-junction cells will be tested.

Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures.

PubMed

Lin, Yu-Chuan; Ghosh, Ram Krishna; Addou, Rafik; Lu, Ning; Eichfeld, Sarah M; Zhu, Hui; Li, Ming-Yang; Peng, Xin; Kim, Moon J; Li, Lain-Jong; Wallace, Robert M; Datta, Suman; Robinson, Joshua A

2015-06-19

Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2-WSe2-graphene and WSe2-MoS2-graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.

Systems analysis of Mars solar electric propulsion vehicles

NASA Technical Reports Server (NTRS)

Hickman, J. M.; Curtis, H. B.; Kenny, B. H.; Sefcik, R. J.

1990-01-01

Mission performance, mass, initial power, and cost are determined for solar electric propulsion vehicles across a range of payload masses, reference powers, and mission trajectories. Thick radiation shielding is added to arrays using indium phosphide or III-V multijunction solar cells to reduce the damage incurred through the radiation belts. Special assessments of power management and distribution systems, atmospheric drag, and energy storage are made. It is determined that atmospheric drag is of no great concern and that the energy storage used in countering drag is unnecessary. A scheme to package the arrays, masts, and ion thrusters into a single fairing is presented.

Optimization of the short-circuit current in an InP nanowire array solar cell through opto-electronic modeling.

PubMed

Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

2016-09-23

InP nanowire arrays with axial p-i-n junctions are promising devices for next-generation photovoltaics, with a demonstrated efficiency of 13.8%. However, the short-circuit current in such arrays does not match their absorption performance. Here, through combined optical and electrical modeling, we study how the absorption of photons and separation of the resulting photogenerated electron-hole pairs define and limit the short-circuit current in the nanowires. We identify how photogenerated minority carriers in the top n segment (i.e. holes) diffuse to the ohmic top contact where they recombine without contributing to the short-circuit current. In our modeling, such contact recombination can lead to a 60% drop in the short-circuit current. To hinder such hole diffusion, we include a gradient doping profile in the n segment to create a front surface barrier. This approach leads to a modest 5% increase in the short-circuit current, limited by Auger recombination with increased doping. A more efficient approach is to switch the n segment to a material with a higher band gap, like GaP. Then, a much smaller number of holes is photogenerated in the n segment, strongly limiting the amount that can diffuse and disappear into the top contact. For a 500 nm long top segment, the GaP approach leads to a 50% higher short-circuit current than with an InP top segment. Such a long top segment could facilitate the fabrication and contacting of nanowire array solar cells. Such design schemes for managing minority carriers could open the door to higher performance in single- and multi-junction nanowire-based solar cells.

Technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE)

NASA Astrophysics Data System (ADS)

Wegrzecka, Iwona; Panas, Andrzej; Bar, Jan; Budzyński, Tadeusz; Grabiec, Piotr; Kozłowski, Roman; Sarnecki, Jerzy; Słysz, Wojciech; Szmigiel, Dariusz; Wegrzecki, Maciej; Zaborowski, Michał

2013-07-01

The paper discusses the technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE). The developed technology enables the fabrication of both planar and epiplanar p+-ν-n+ detector structures with an active area of up to 50 cm2. The starting material for epiplanar structures are silicon wafers with a high-resistivity n-type epitaxial layer ( ν layer - ρ < 3 kΩcm) deposited on a highly doped n+-type substrate (ρ< 0,02Ωcm) developed and fabricated at the Institute of Electronic Materials Technology. Active layer thickness of the epiplanar detectors (νlayer) may range from 10 μm to 150 μm. Imported silicon with min. 5 kΩcm resistivity is used to fabricate planar detectors. Active layer thickness of the planar detectors (ν) layer) may range from 200 μm to 1 mm. This technology enables the fabrication of both discrete and multi-junction detectors (monolithic detector arrays), such as single-sided strip detectors (epiplanar and planar) and double-sided strip detectors (planar). Examples of process diagrams for fabrication of the epiplanar and planar detectors are presented in the paper, and selected technological processes are discussed.

Reciprocal capacitance transients?

NASA Astrophysics Data System (ADS)

Gfroerer, Tim; Simov, Peter; Wanlass, Mark

2007-03-01

When the reverse bias across a semiconductor diode is changed, charge carriers move to accommodate the appropriate depletion thickness, producing a simultaneous change in the device capacitance. Transient capacitance measurements can reveal inhibited carrier motion due to trapping, where the depth of the trap can be evaluated using the temperature-dependent escape rate. However, when we employ this technique on a GaAs0.72P0.28 n+/p diode (which is a candidate for incorporation in multi-junction solar cells), we observe a highly non-exponential response under a broad range of experimental conditions. Double exponential functions give good fits, but lead to non-physical results. The deduced rates depend on the observation time window and fast and slow rates, which presumably correspond to deep and shallow levels, have identical activation energies. Meanwhile, we have discovered a universal linear relationship between the inverse of the capacitance and time. An Arrhenius plot of the slope of the reciprocal of the transient yields an activation energy of approximately 0.4 eV, independent of the observation window and other experimental conditions. The reciprocal behavior leads us to hypothesize that hopping, rather than escape into high-mobility bands, may govern the transport of trapped holes in this system.

Correlation between the physical parameters of the i-nc-Si absorber layer grown by 27.12 MHz plasma with the nc-Si solar cell parameters

NASA Astrophysics Data System (ADS)

Das, Debajyoti; Mondal, Praloy

2017-09-01

Growth of highly conducting nanocrystalline silicon (nc-Si) thin films of optimum crystalline volume fraction, involving dominant <220> crystallographic preferred orientation with simultaneous low fraction of microstructures at a low substrate temperature and high growth rate, is a challenging task for its promising utilization in nc-Si solar cells. Utilizing enhanced electron density and superior ion flux densities of the high frequency (∼27.12 MHz) SiH4 plasma, improved nc-Si films have been produced by simple optimization of H2-dilution, controlling the ion damage and enhancing supply of atomic-hydrogen onto the growing surface. Single junction nc-Si p-i-n solar cells have been prepared with i-nc-Si absorber layer and optimized. The physical parameters of the absorber layer have been systematically correlated to variations of the solar cell parameters. The preferred <220> alignment of crystallites, its contribution to the low recombination losses for conduction of charge carriers along the vertical direction, its spectroscopic correlation with the dominant growth of ultra-nanocrystalline silicon (unc-Si) component and corresponding longer wavelength absorption, especially in the neighborhood of i/n-interface region recognize scientific and technological key issues that pave the ground for imminent advancement of multi-junction silicon solar cells.

18th Space Photovoltaic Research and Technology Conference

NASA Technical Reports Server (NTRS)

Morton, Thomas L. (Compiler)

2005-01-01

The 18th Space Photovoltaic Research and Technology (SPRAT XVIII) Conference was held September 16 to 18, 2003, at the Ohio Aerospace Institute (OAI) in Brook Park, Ohio. The SPRAT conference, hosted by the Photovoltaic and Space Environments Branch of the NASA Glenn Research Center, brought together representatives of the space photovoltaic community from around the world to share the latest advances in space solar cell technology. This year s conference continued to build on many of the trends shown in SPRAT XVII-the continued advances of thin-film and multijunction solar cell technologies and the new issues required to qualify those types of cells for space applications.

CPV cell characterization following one-year exposure in Golden Colorado

NASA Astrophysics Data System (ADS)

Bosco, Nick; Kurtz, Sarah

2014-09-01

A CPV module containing 30 III-V multijunction cells was operated on-sun for one year in Golden, Colorado. Each cell was characterized prior to and following exposure. A module power degradation of 10% was observed and found to be a result as an overall decrease in cell short circuit current and the presence of at least one shunted cell. A positive correlation between initial shunt current and an increase in shunt current following exposure was also found. Cell exfoliation was also observed and found to be coincident with the presence of water and/or charring of the cell package due to an off-sun event.

Proceedings of the 19th Space Photovoltaic Research and Technology Conference

NASA Technical Reports Server (NTRS)

Castro, Stephanie (Compiler); Morton, Thomas (Compiler)

2007-01-01

The 19th Space Photovoltaic Research and Technology Conference (SPRAT XIX) was held September 20 to 22, 2005, at the Ohio Aerospace Institute (OAI) in Brook Park, Ohio. The SPRAT Conference, hosted by the Photovoltaic and Space Environments Branch of the NASA Glenn Research Center, brought together representatives of the space photovoltaic community from around the world to share the latest advances in space solar cell technology. This year's conference continued to build on many of the trends shown in SPRAT XVIII-the continued advances of thin-film and multijunction solar cell technologies and the new issues required to qualify those types of cells for space applications.

Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

PubMed Central

Lin, Yu-Chuan; Ghosh, Ram Krishna; Addou, Rafik; Lu, Ning; Eichfeld, Sarah M.; Zhu, Hui; Li, Ming-Yang; Peng, Xin; Kim, Moon J.; Li, Lain-Jong; Wallace, Robert M.; Datta, Suman; Robinson, Joshua A.

2015-01-01

Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics. PMID:26088295

Direct wafer bonding of highly conductive GaSb/GaInAs and GaSb/GaInP heterojunctions prepared by argon-beam surface activation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Predan, Felix, E-mail: felix.predan@ise.fraunhofer.de; Reinwand, Dirk; Cariou, Romain

The authors present a low-temperature wafer bonding process for the formation of electrically conductive n-GaSb/n-Ga{sub 0.79}In{sub 0.21}As and n-GaSb/n-Ga{sub 0.32}In{sub 0.68}P heterojunctions. The surfaces are deoxidized by sputter-etching with an argon-beam and bonded in ultrahigh vacuum. The sputtering behavior was investigated for each material, revealing a distinct selective sputtering characteristic for Ga{sub 0.32}In{sub 0.68}P. According to these findings, the settings for the bonding process were chosen. The mechanical and electrical properties of the wafer bonds were studied. Fully bonded 2 in. wafer pairs were found for both material combinations exhibiting high bond energies, which are comparable to the binding energiesmore » in the semiconductors. Furthermore, bond resistances below 5 mΩ cm{sup 2} could be reached, which are in the range of the lowest resistances that have been reported for wafer bonded heterojunctions. This speaks, together with the high bond energies, for a high amount of covalent bonds at the interfaces. These promising bond characteristics make the integration of antimonides with arsenides or phosphides by wafer bonding attractive for various optoelectronic applications such as multijunction solar cells.« less

Design and Performance of a Triple Source Air Mass Zero Solar Simulator

NASA Technical Reports Server (NTRS)

Jenkins, Phillip; Scheiman, David; Snyder, David

2005-01-01

Simulating the sun in a laboratory for the purpose of measuring solar cells has long been a challenge for engineers and scientists. Multi-junction cells demand higher fidelity of a solar simulator than do single junction cells, due to a need for close spectral matching as well as AM0 intensity. A GaInP/GaAs/Ge solar cell for example, requires spectral matching in three distinct spectral bands (figure 1). A commercial single source high-pressure xenon arc solar simulator such as the Spectrolab X-25 at NASA Glenn Research Center, can match the top two junctions of a GaInP/GaAs/Ge cell to within 1.3% mismatch, with the GaAs cell receiving slightly more current than required. The Ge bottom cell however, is mismatched +8.8%. Multi source simulators are designed to match the current for all junctions but typically have small illuminated areas, less uniformity and less beam collimation compared to an X-25 simulator. It was our intent when designing a multi source simulator to preserve as many aspects of the X-25 while adding multi-source capability.

Interaction between the lower hybrid wave and density fluctuations in the scrape-off layer

NASA Astrophysics Data System (ADS)

Peysson, Y.; Madi, M.; Decker, J.; Kabalan, K.

2015-12-01

In the present paper, the perturbation of the launched power spectrum of the Lower Hybrid wave at the separatrix by electron density fluctuations in the scrape-off layer is investigated. Considering a slab geometry with magnetic field lines parallel to the toroidal direction, the full wave equation is solved using Comsol Multiphysics® for a fully active multi-junction like LH antenna made of two modules. When electron density fluctuations are incorporated in the dielectric tensor over a thin perturbed layer in front of the grill, it is shown that the power spectrum may be strongly modified from the antenna mouth to the plasma separatrix as the wave propagates. The diffraction effect leads to the appearance of multiple satellite lobes with randomly varying positions, a feature consistent with the recently developed model that has been applied successfully to high density discharges on the Tokamak Tore Supra corresponding to the large spectral gap regime [Decker J. et al. Phys. Plasma 21 (2014) 092504]. The perturbation is found to be maximum for the Fourier components of the fluctuating spectrum in the vicinity of the launched LH wavelength.

Manifestation of counteracting photovoltaic effect on IV characteristics in multi-junction solar cells

NASA Astrophysics Data System (ADS)

Mintairov, M. A.; Evstropov, V. V.; Mintairov, S. A.; Shvarts, M. Z.; Kozhukhovskaia, S. A.; Kalyuzhnyy, N. A.

2017-11-01

The existence within monolithic double- and triple-junction solar cells of a photoelectric source, which counteracts the basic photovoltaic p-n junctions, is proved. The paper presents a detailed analysis of the shape of the light IV-characteristics, as well as the dependence Voc-Jsc (open circuit voltage - short-circuit current). It is established that the counteracting source is tunnel p+-n+ junction. The photoelectric characteristics of samples with different tunnel diode peak current values were investigated, including the case of a zero value. When the tunnel p+-n+ junction is photoactive, the Voc-Jsc dependence has a dropping part, including a sharp jump. This undesirable effect decreases with increasing peak current.

CPV Cell Characterization Following One-Year Exposure in Golden, Colorado

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bosco, Nick; Kurtz, Sarah

2014-09-26

A CPV module containing 30 III-V multijunction cells was operated on--sun for one year in Golden, Colorado. Each cell was characterized prior to and following exposure. A module power degradation of 10% was observed and found to be a result as an overall decrease in cell short circuit current and the presence of at least one shunted cell. A positive correlation between initial shunt current and an increase in shunt current following exposure was also found. Cell exfoliation was also observed and found to be coincident with the presence of water and/or charring of the cell package due to anmore » off-sun event.« less

Broad spectrum solar cell

DOEpatents

Walukiewicz, Wladyslaw [Kensington, CA; Yu, Kin Man [Lafayette, CA; Wu, Junqiao [Richmond, CA; Schaff, William J [Ithaca, NY

2007-05-15

An alloy having a large band gap range is used in a multijunction solar cell to enhance utilization of the solar energy spectrum. In one embodiment, the alloy is In.sub.1-xGa.sub.xN having an energy bandgap range of approximately 0.7 eV to 3.4 eV, providing a good match to the solar energy spectrum. Multiple junctions having different bandgaps are stacked to form a solar cell. Each junction may have different bandgaps (realized by varying the alloy composition), and therefore be responsive to different parts of the spectrum. The junctions are stacked in such a manner that some bands of light pass through upper junctions to lower junctions that are responsive to such bands.

CPV Cell Characterization Following One-Year Exposure in Golden, Colorado: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bosco, N.; Kurtz, S.

2014-08-01

A CPV module containing 30 III-V multijunction cells was operated on?sun for one year in Golden, Colorado. Each cell was characterized prior to and following exposure. A module power degradation of 10% was observed and found to be a result as an overall decrease in cell short circuit current and the presence of at least one shunted cell. A positive correlation between initial shunt current and an increase in shunt current following exposure was also found. Cell exfoliation was also observed and found to be coincident with the presence of water and/or charring of the cell package due to anmore » off-sun event.« less

Strategies for increasing the efficiency of heterojunction organic solar cells: material selection and device architecture.

PubMed

Heremans, Paul; Cheyns, David; Rand, Barry P

2009-11-17

Thin-film blends or bilayers of donor- and acceptor-type organic semiconductors form the core of heterojunction organic photovoltaic cells. Researchers measure the quality of photovoltaic cells based on their power conversion efficiency, the ratio of the electrical power that can be generated versus the power of incident solar radiation. The efficiency of organic solar cells has increased steadily in the last decade, currently reaching up to 6%. Understanding and combating the various loss mechanisms that occur in processes from optical excitation to charge collection should lead to efficiencies on the order of 10% in the near future. In organic heterojunction solar cells, the generation of photocurrent is a cascade of four steps: generation of excitons (electrically neutral bound electron-hole pairs) by photon absorption, diffusion of excitons to the heterojunction, dissociation of the excitons into free charge carriers, and transport of these carriers to the contacts. In this Account, we review our recent contributions to the understanding of the mechanisms that govern these steps. Starting from archetype donor-acceptor systems of planar small-molecule heterojunctions and solution-processed bulk heterojunctions, we outline our search for alternative materials and device architectures. We show that non-planar phthalocynanines have appealing absorption characteristics but also have reduced charge carrier transport. As a result, the donor layer needs to be ultrathin, and all layers of the device have to be tuned to account for optical interference effects. Using these optimization techniques, we illustrate cells with 3.1% efficiency for the non-planar chloroboron subphthalocyanine donor. Molecules offering a better compromise between absorption and carrier mobility should allow for further improvements. We also propose a method for increasing the exciton diffusion length by converting singlet excitons into long-lived triplets. By doping a polymer with a phosphorescent molecule, we demonstrate an increase in the exciton diffusion length of a polymer from 4 to 9 nm. If researchers can identify suitable phosphorescent dopants, this method could be employed with other materials. The carrier transport from the junction to the contacts is markedly different for a bulk heterojunction cell than for planar junction cells. Unlike for bulk heterojunction cells, the open-circuit voltage of planar-junction cells is independent of the contact work functions, as a consequence of the balance of drift and diffusion currents in these systems. This understanding helps to guide the development of new materials (particularly donor materials) that can further boost the efficiency of single-junction cells to 10%. With multijunction architectures, we expect that efficiencies of 12-16% could be attained, at which point organic photovoltaic cells could become an important renewable energy source.

Experimental characterization and modelling of non-linear coupling of the lower hybrid current drive power on Tore Supra

NASA Astrophysics Data System (ADS)

Preynas, M.; Goniche, M.; Hillairet, J.; Litaudon, X.; Ekedahl, A.; Colas, L.

2013-01-01

To achieve steady-state operation on future fusion devices, in particular on ITER, the coupling of the lower hybrid wave must be optimized on a wide range of edge conditions. However, under some specific conditions, deleterious effects on the lower hybrid current drive (LHCD) coupling are sometimes observed on Tore Supra. In this way, dedicated LHCD experiments have been performed using the LHCD system of Tore Supra, composed of two different conceptual designs of launcher: the fully active multi-junction (FAM) and the new passive active multi-junction (PAM) antennas. A non-linear interaction between the electron density and the electric field has been characterized in a thin plasma layer in front of the two LHCD antennas. The resulting dependence of the power reflection coefficient (RC) with the LHCD power is not predicted by the standard linear theory of the LH wave coupling. A theoretical model is suggested to describe the non-linear wave-plasma interaction induced by the ponderomotive effect and implemented in a new full wave LHCD code, PICCOLO-2D (ponderomotive effect in a coupling code of lower hybrid wave-2D). The code self-consistently treats the wave propagation in the antenna vicinity and its interaction with the local edge plasma density. The simulation reproduces very well the occurrence of a non-linear behaviour in the coupling observed in the LHCD experiments. The important differences and trends between the FAM and the PAM antennas, especially a larger increase in RC for the FAM, are also reproduced by the PICCOLO-2D simulation. The working hypothesis of the contribution of the ponderomotive effect in the non-linear observations of LHCD coupling is therefore validated through this comprehensive modelling for the first time on the FAM and PAM antennas on Tore Supra.

On-Orbit Measurement of Next Generation Space Solar Cell Technology on the International Space Station

NASA Technical Reports Server (NTRS)

Wolford, David S.; Myers, Matthew G.; Prokop, Norman F.; Krasowski, Michael J.; Parker, David S.; Cassidy, Justin C.; Davies, William E.; Vorreiter, Janelle O.; Piszczor, Michael F.; McNatt, Jeremiah S.

2015-01-01

Measurement is essential for the evaluation of new photovoltaic (PV) technology for space solar cells. NASA Glenn Research Center (GRC) is in the process of measuring several solar cells in a supplemental experiment on NASA Goddard Space Flight Center's (GSFC) Robotic Refueling Mission's (RRM) Task Board 4 (TB4). Four industry and government partners have provided advanced PV devices for measurement and orbital environment testing. The experiment will be on-orbit for approximately 18 months. It is completely self-contained and will provide its own power and internal data storage. Several new cell technologies including four- junction (4J) Inverted Metamorphic Multijunction (IMM) cells will be evaluated and the results compared to ground-based measurements.

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2018-04-01

In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

Fabrication of Cu2SnS3 thin films by ethanol-ammonium solution process by doctor-blade technique

NASA Astrophysics Data System (ADS)

Wang, Yaguang; Li, Jianmin; Xue, Cong; Zhang, Yan; Jiang, Guoshun; Liu, Weifeng; Zhu, Changfei

2017-11-01

In the present study, a low-cost and simple method is applied to fabricate Cu2SnS3 (CTS) thin films. Namely CTS thin films are prepared by a doctor-blade method with a slurry dissolving the Cu2O and SnS powders obtained from CBD reaction solution into ethanol-ammonium solvents. Series of characterization methods including XRD, Raman spectra, SEM and UV-Vis analyses are introduced to investigate the phase structure, morphology and optical properties of CTS thin films. As a result, monoclinic CTS films have been obtained with the disappearance of binary phases CuS and SnS2 while increasing the annealing temperature and time, high quality monoclinic CTS thin films consisting of compact and large grains have been successfully prepared by this ethanol-ammonium method. Moreover, the secondary phase Cu2Sn3S7 is also observed during the annealing process. In addition, the post-annealed CTS film with a band-gap about 0.89 eV shows excellent absorbance between 400 and 1200 nm, which is proper for the bottom layer in multi-junction thin film solar cells.[Figure not available: see fulltext.

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

NASA Astrophysics Data System (ADS)

Di Bartolomeo, Antonio; Giubileo, Filippo; Luongo, Giuseppe; Iemmo, Laura; Martucciello, Nadia; Niu, Gang; Fraschke, Mirko; Skibitzki, Oliver; Schroeder, Thomas; Lupina, Grzegorz

2017-03-01

We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 {{A}} {{{W}}}-1 for white LED light at 3 {{mW}} {{{cm}}}-2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters, and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. We also introduce a new phenomenological graphene/semiconductor diode equation, which well describes the experimental I-V characteristics both in forward and reverse bias.

A hybrid reconfigurable solar and wind energy system

NASA Astrophysics Data System (ADS)

Gadkari, Sagar A.

We study the feasibility of a novel hybrid solar-wind hybrid system that shares most of its infrastructure and components. During periods of clear sunny days the system will generate electricity from the sun using a parabolic concentrator. The concentrator is formed by individual mirror elements and focuses the light onto high intensity vertical multi-junction (VMJ) cells. During periods of high wind speeds and at night, the same concentrator setup will be reconfigured to channel the wind into a wind turbine which will be used to harness wind energy. In this study we report on the feasibility of this type of solar/wind hybrid energy system. The key mechanisms; optics, cooling mechanism of VMJ cells and air flow through the system were investigated using simulation tools. The results from these simulations, along with a simple economic analysis giving the levelized cost of energy for such a system are presented. An iterative method of design refinement based on the simulation results was used to work towards a prototype design. The levelized cost of the system achieved in the economic analysis shows the system to be a good alternative for a grid isolated site and could be used as a standalone system in regions of lower demand. The new approach to solar wind hybrid system reported herein will pave way for newer generation of hybrid systems that share common infrastructure in addition to the storage and distribution of energy.

Glass light pipes for solar concentration

NASA Astrophysics Data System (ADS)

Madsen, C. K.; Dogan, Y.; Morrison, M.; Hu, C.; Atkins, R.

2018-02-01

Glass waveguides are fabricated using laser processing techniques that have low optical loss with >90% optical throughput. Advanced light pipes are demonstrated, including angled facets for turning mirrors used for lens-to-light pipe coupling, tapers that increase the concentration, and couplers for combining the outputs from multiple lens array elements. Because they are fabricated from glass, these light pipes can support large optical concentrations and propagate broadband solar over long distances with minimal loss and degradation compared to polymer waveguides. Applications include waveguiding solar concentrators using multi-junction PV cells, solar thermal applications and remoting solar energy, such as for daylighting. Ray trace simulations are used to estimate the surface smoothness required to achieve low loss. Optical measurements for fabricated light pipes are reported for use in waveguiding solar concentrator architectures.

Built-in electric field thickness design for betavoltaic batteries

NASA Astrophysics Data System (ADS)

Haiyang, Chen; Darang, Li; Jianhua, Yin; Shengguo, Cai

2011-09-01

Isotope source energy deposition along the thickness direction of a semiconductor is calculated, based upon which an ideal short current is evaluated for betavoltaic batteries. Electron-hole pair recombination and drifting length in a PN junction built-in electric field are extracted by comparing the measured short currents with the ideal short currents. A built-in electric field thickness design principle is proposed for betavoltaic batteries: after measuring the energy deposition depth and the carrier drift length, the shorter one should then be chosen as the built-in electric field thickness. If the energy deposition depth is much larger than the carrier drift length, a multi-junction is preferred in betavoltaic batteries and the number of the junctions should be the value of the deposition depth divided by the drift length.

Analysis of InxGa1-xN/Si p-n heterojunction solar cells and the effects of spontaneous and piezoelectric polarization charges

NASA Astrophysics Data System (ADS)

Zheng, Yangdong; Mihara, Akihiro; Yamamoto, Akio

2013-10-01

The band structures, current-voltage characteristics under solar illumination, and photovoltaic (PV) properties of InxGa1-xN/Si p-n heterojunction solar cells (SCs), as well as the effects of spontaneous and piezoelectric polarization (Psp-PPZ) induced charges are investigated theoretically and numerically. We find that the energy peaks on the conduction and valence bands could exponentially reduce the diffusion currents and photocurrents, thus profoundly affect the PV properties of the SCs. Except for large values, the Psp-PPZ induced interface charges have little influence on the band structures and the PV properties. These results should be useful in analysis and design for multijunction tandem InxGa1-xN/Si SC devices.

Passive Active Multi-Junction 3, 7 GHZ launcher for Tore-Supra Long Pulse Experiments. Manufacturing Process and Tests

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guilhem, D.; Achard, J.; Bertrand, B.

2009-11-26

The design and the fabrication of a new Lower Hybrid (LH) actively cooled antenna based on the passive active concept is a part of the CIMES project (Components for the Injection of Mater and Energy in Steady-state). The major objectives of Tore-Supra program is to achieve 1000 s pulses with this LH launcher, by coupling routinely >3 MW of LH wave at 3.7 GHz to the plasma with a parallel index n{sub ||} = 1.7 {sup {+-}}{sup 0.2}. The launcher is on its way to achieve its validation tests--low power Radio Frequency (RF) measurements, vacuum and hydraulic leak tests--and willmore » be installed and commissioned on plasma during the fall of 2009.« less

Investigation of advanced nanostructured multijunction photoanodes for enhanced solar hydrogen generation via water splitting

NASA Astrophysics Data System (ADS)

Ishihara, Hidetaka

As the worldwide demand for fossil-based fuel increases every day and the fossil reserve continues to be depleted, the need for alternative/renewable energy sources has gained momentum. Electric, hybrid, and hydrogen cars have been at the center of discussion lately among consumers, automobile manufacturers, and politicians, alike. The development of a fuel-cell based engine using hydrogen has been an ambitious research area over the last few decades-ever since Fujishima showed that hydrogen can be generated via the solar-energy driven photo-electrolytic splitting of water. Such solar cells are known as Photo-Electro-Chemical (PEC) solar cells. In order to commercialize this technology, various challenges associated with photo-conversion efficiency, chemical corrosion resistance, and longevity need to be overcome. In general, metal oxide semiconductors such as titanium dioxide (TiO 2, titania) are excellent candidates for PEC solar cells. Titania nanotubes have several advantages, including biocompatibility and higher chemical stability. Nevertheless, they can absorb only 5-7% of the solar spectrum which makes it difficult to achieve the higher photo-conversion efficiency required for successful commercial applications. A two-prong approach was employed to enhance photo-conversion efficiency: 1) surface modification of titania nanotubes using plasma treatment and 2) nano-capping of the titania nanotubes using titanium disilicide. The plasma surface treatment with N2 was found to improve the photo-current efficiency of titania nanotubes by 55%. Similarly, a facile, novel approach of nano-capping titania nanotubes to enhance their photocurrent response was also investigated. Electrochemically anodized titania nanotubes were capped by coating a 25 nm layer of titanium disilicide using RF magnetron sputtering technique. The optical properties of titania nanotubes were not found to change due to the capping; however, a considerable increase (40%) in the photocurrent density was observed for the nano-capped titania nanotubes due to the enhanced charge transfer process. Similarly, another metal oxide semiconductor was investigated tungsten trioxide (WO3), which has a much higher absorption capability (12%) in the solar spectrum. The WO3 porous nanostructures suffered from surface corrosion resulting in a large reduction in the photocurrent density as a function of time in the alkaline electrolytes. However, with a protective coating of Indium Tin Oxide (100 nm), the surface corrosion of WO3 porous nanostructures was reduced. A large increase in the photocurrent density of as much as 340% was observed after the ITO was applied to the WO3 porous nanostructures

Dish-based CPV-T for rooftop generation

NASA Astrophysics Data System (ADS)

Davila-Peralta, Christian; Hyatt, Justin; Alfred, Dan; Struble, Morgan; Sodari, Frank; Angel, Roger

2017-09-01

Hybrid CPV-T with combined electrical and thermal output is well suited to solar generation from fixed limited areas, such as on the roof of an industrial or commercial facility with need for heat. This application will become especially attractive once overall electrical conversion efficiency of 40% is reached, as is projected for REhnu CPV systems using multijunction cells of 50% efficiency, anticipated in a few years. We outline here a configuration of dish- based CPV trackers optimized for close packing on a flat roof in a triangular grid, with a mirror area-to-ground area ratio of 50%. When the geometry of shadowing averaged over a year is taken into account, 80% of all the sunlight that would strike the rooftop is directed into the receivers. Such an array on a given area of flat roof will generate more electrical energy than would be possible with conventional PV panels, even if covering the entire rooftop, because of silicon's relative inefficiency. For example, in Tucson, the annual average global flux of 5.7 kWh/m2/day on a horizontal surface covered with 22% silicon modules will yield 1.25 kWh/m2/day. We show that a CPV system collecting 80% of all the direct sunlight of 7.0 kWh/m2 and converting it with 40% efficiency will yield 2.24 kWh/m2/day of rooftop area, nearly twice as much4. Thermal power will double again the total energy yield. A dual axis CPV-T tracker designed specifically very close spacing has been built to carry a single dish mirror of the standard type used in REhnu's M-8 generator, described by Stalcup et al in these proceedings1,2. Sunlight is collected and focused by a single square paraboloidal mirror, 1.65 × 1.65 m with focal length of 1.5 m. For closest possible packing without mechanical interference, and for broad distribution of load on a rooftop, the mirror and receiver are mounted to a C-ring structure, configured such that the elevation and azimuth axes intersect at a virtual pivot, at the center of the sphere that just clears the receiver and the corners of the mirror. Initial tests of closed loop tracking show an accuracy of 0.03° rms under calm conditions, and 0.04° rms in 6 m/sec wind.

Sputtered Metal Oxide Broken Gap Junctions for Tandem Solar Cells

NASA Astrophysics Data System (ADS)

Johnson, Forrest

Broken gap metal oxide junctions have been created for the first time by sputtering using ZnSnO3 for the n-type material and Cu 2O or CuAlO2 for the p-type material. Films were sputtered from either ceramic or metallic targets at room temperature from 10nm to 220nm thick. The band structure of the respective materials have theoretical work functions which line up with the band structure for tandem CIAGS/CIGS solar cell applications. Multiple characterization methods demonstrated consistent ohmic I-V profiles for devices on rough surfaces such as ITO/glass and a CIAGS cell. Devices with total junction specific contact resistance of under 0.001 Ohm-cm2 have been achieved with optical transmission close to 100% using 10nm films. Devices showed excellent stability up to 600°C anneals over 1hr using ZnSnO3 and CuAlO2. These films were also amorphous -a great diffusion barrier during top cell growth at high temperatures. Rapid Thermal Anneal (RTA) demonstrated the ability to shift the band structure of the whole device, allowing for tuning it to align with adjacent solar layers. These results remove a key barrier for mass production of multi-junction thin film solar cells.

Transparent contacts for stacked compound photovoltaic cells

DOEpatents

Tauke-Pedretti, Anna; Cederberg, Jeffrey; Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose Luis

2016-11-29

A microsystems-enabled multi-junction photovoltaic (MEM-PV) cell includes a first photovoltaic cell having a first junction, the first photovoltaic cell including a first semiconductor material employed to form the first junction, the first semiconductor material having a first bandgap. The MEM-PV cell also includes a second photovoltaic cell comprising a second junction. The second photovoltaic cell comprises a second semiconductor material employed to form the second junction, the second semiconductor material having a second bandgap that is less than the first bandgap, the second photovoltaic cell further comprising a first contact layer disposed between the first junction of the first photovoltaic cell and the second junction of the second photovoltaic cell, the first contact layer composed of a third semiconductor material having a third bandgap, the third bandgap being greater than or equal to the first bandgap.

NASA Glenn Research Center Solar Cell Experiment Onboard the International Space Station

NASA Technical Reports Server (NTRS)

Myers, Matthew G.; Wolford, David S.; Prokop, Norman F.; Krasowski, Michael J.; Parker, David S.; Cassidy, Justin C.; Davies , William E.; Vorreiter, Janelle O.; Piszczor, Michael F.; Mcnatt, Jeremiah S.;

Quantifying Low Energy Proton Damage in Multijunction Solar Cells

NASA Technical Reports Server (NTRS)

Messenger, Scott R.; Burke, Edward A.; Walters, Robert J.; Warner, Jeffrey H.; Summers, Geoffrey P.; Lorentzen, Justin R.; Morton, Thomas L.; Taylor, Steven J.

2007-01-01

An analysis of the effects of low energy proton irradiation on the electrical performance of triple junction (3J) InGaP2/GaAs/Ge solar cells is presented. The Monte Carlo ion transport code (SRIM) is used to simulate the damage profile induced in a 3J solar cell under the conditions of typical ground testing and that of the space environment. The results are used to present a quantitative analysis of the defect, and hence damage, distribution induced in the cell active region by the different radiation conditions. The modelling results show that, in the space environment, the solar cell will experience a uniform damage distribution through the active region of the cell. Through an application of the displacement damage dose analysis methodology, the implications of this result on mission performance predictions are investigated.

Direct sunlight facility for testing and research in HCPV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sciortino, Luisa, E-mail: luisa.sciortino@unipa.it; Agnello, Simonpietro, E-mail: luisa.sciortino@unipa.it; Bonsignore, Gaetano

2014-09-26

A facility for testing different components for HCPV application has been developed in the framework of 'Fotovoltaico ad Alta Efficienza' (FAE) project funded by the Sicilian Regional Authority (PO FESR Sicilia 2007/2013 4.1.1.1). The testing facility is equipped with an heliostat providing a wide solar beam inside the lab, an optical bench for mounting and aligning the HCPV components, electronic equipments to characterize the I-V curves of multijunction cells operated up to 2000 suns, a system to circulate a fluid in the heat sink at controlled temperature and flow-rate, a data logging system with sensors to measure temperatures in severalmore » locations and fluid pressures at the inlet and outlet of the heat sink, and a climatic chamber with large test volume to test assembled HCPV modules.« less

US Naval Research Laboratory's Current Space Photovoltaic Experiemtns

NASA Astrophysics Data System (ADS)

Jenkins, Phillip; Walters, Robert; Messenger, Scott; Krasowski, Michael

2008-09-01

The US Naval Research Laboratory (NRL) has a rich history conducting space photovoltaic (PV) experiments starting with Vanguard I, the first solar powered satellite in 1958. Today, NRL in collaboration with the NASA Glenn Research Center, is engaged in three flight experiments demonstrating a wide range of PV technologies in both LEO and HEO orbits. The Forward Technology Solar Cell Experiment (FTSCE)[1], part of the 5th Materials on the International Space Station Experiment (MISSE-5), flew for 13 months on the International Space Station in 2005-2006. The FTSCE provided in-situ I-V monitoring of advanced III-V multi-junction cells and laboratory prototypes of thin film and other next generation technologies. Two experiments under development will provide more opportunities to demonstrate advanced solar cells and characterization electronics that are easily integrated on a wide variety of spacecraft bus architectures.

A high specific power solar array for low to mid-power spacecraft

NASA Technical Reports Server (NTRS)

Jones, P. Alan; White, Stephen F.; Harvey, T. Jeffery; Smith, Brian S.

1993-01-01

UltraFlex is the generic term for a solar array system which delivers on-orbit power in the 400 to 6,000 watt per wing sizes with end-of-life specific power performance ranging to 150 watts-per-kilogram. Such performance is accomplished with off-the-shelf solar cells and state-of the-art materials and processes. Much of the recent work in photovoltaics is centered on advanced solar cell development. Successful as such work has been, no integrated solar array system has emerged which meets NASA's stated goals of 'increasing the end-of-life performance of space solar cells and arrays while minimizing their mass and cost.' This issue is addressed; namely, is there an array design that satisfies the usual requirements for space-rated hardware and that is inherently reliable, inexpensive, easily manufactured and simple, which can be used with both advanced cells currently in development and with inexpensive silicon cells? The answer is yes. The UltraFlex array described incorporates use of a blanket substrate which is thermally compatible with silicon and other materials typical of advanced multi-junction devices. The blanket materials are intrinsically insensitive to atomic oxygen degradation, are space rated, and are compatible with standard cell bonding processes. The deployment mechanism is simple and reliable and the structure is inherently stiff (high natural frequency). Mechanical vibration modes are also readily damped. The basic design is presented as well as supporting analysis and development tests.

A high specific power solar array for low to mid-power spacecraft

NASA Astrophysics Data System (ADS)

Jones, P. Alan; White, Stephen F.; Harvey, T. Jeffery; Smith, Brian S.

1993-05-01

UltraFlex is the generic term for a solar array system which delivers on-orbit power in the 400 to 6,000 watt per wing sizes with end-of-life specific power performance ranging to 150 watts-per-kilogram. Such performance is accomplished with off-the-shelf solar cells and state-of the-art materials and processes. Much of the recent work in photovoltaics is centered on advanced solar cell development. Successful as such work has been, no integrated solar array system has emerged which meets NASA's stated goals of 'increasing the end-of-life performance of space solar cells and arrays while minimizing their mass and cost.' This issue is addressed; namely, is there an array design that satisfies the usual requirements for space-rated hardware and that is inherently reliable, inexpensive, easily manufactured and simple, which can be used with both advanced cells currently in development and with inexpensive silicon cells? The answer is yes. The UltraFlex array described incorporates use of a blanket substrate which is thermally compatible with silicon and other materials typical of advanced multi-junction devices. The blanket materials are intrinsically insensitive to atomic oxygen degradation, are space rated, and are compatible with standard cell bonding processes. The deployment mechanism is simple and reliable and the structure is inherently stiff (high natural frequency). Mechanical vibration modes are also readily damped. The basic design is presented as well as supporting analysis and development tests.

Modeling of a VMJ PV array under Gaussian high intensity laser power beam condition

NASA Astrophysics Data System (ADS)

Eom, Jeongsook; Kim, Gunzung; Park, Yongwan

2018-02-01

The high intensity laser power beaming (HILPB) system is one of the most promising systems in the long-rang wireless power transfer field. The vertical multi-junction photovoltaic (VMJ PV) array converts the HILPB into electricity to power the load or charges a battery. The output power of a VMJ PV array depends mainly on irradiance values of each VMJ PV cells. For simulating an entire VMJ PV array, the irradiance profile of the Gaussian HILPB and the irradiance level of the VMJ PV cell are mathematically modeled first. The VMJ PV array is modeled as a network with dimension m*n, where m represents the number of VMJ PV cells in a column, and n represents the number of VMJ PV cells in a row. In order to validate the results obtained in modeling and simulation, a laboratory setup was developed using 55 VMJ PV array. By using the output power model of VMJ PV array, we can establish an optimal power transmission path by the receiver based on the received signal strength. When the laser beam from multiple transmitters aimed at a VMJ PV array at the same time, the received power is the sum of all energy at a VMJ PV array. The transmitter sends its power characteristics as optically coded laser pulses and powers as HILPB. Using the attenuated power model and output power model of VMJ PV array, the receiver can estimate the maximum receivable powers from the transmitters and select optimal transmitters.

Two year performance of a 10 kW CPV system installed in two areas of Saudi Arabia

NASA Astrophysics Data System (ADS)

Khonkar, Hussam; Alowais, Abdullah; Sheikho, Ayman; Alyahya, Abdulaziz; Alghamdi, Ahmed; Alsaedan, Abdullah; Eugenio, Nunilo N.; Alalweet, Fahad; Halawani, Mohammad; Alsaferan, Abdulrahman

2014-09-01

The three year KACST/IBM collaboration in solar technology research led to the design and development of a 10kW CPV system. The system is comprised of 81 PV modules, inverters and a tracking system and is grid connected. A primary and secondary optics were employed to reach 1600x concentration on multijunction solar cells. Two CPV trackers were installed in the city of Riyadh and one in the eastern coastal city of Al Khafji. These two areas differ in climatic conditions. Riyadh is mostly dry and very often hit by very strong sand storms while Al Khafji is very humid with sand storms. Very fine dusts and dirt carried by the storms hits the surface of the primary optics, Fresnel lens, of the system. In Riyadh, the particles stick to the lenses but accumulation in the surface is not much since it is blown away by wind. However, the humid condition of the coastal areas wets the dusts and makes it sticky, cumulating more dusts and dirt. This paper discusses in details the parts of the 10kW CPV system. It presents a comprehensive analysis of the system's performance since the time they were installed and operated. CPV systems are operated with the least number of personnel and supervision. However, dust and dirt lessens the amount of sunlight passing through the primary optics. It requires periodic cleaning of the Fresnel lens. Different methods of cleaning were tried to identify the efficient way to clean the system that results to a higher power generation. Corrections and modifications of the system to further increase power production are presented.

Further Analyses of the NASA Glenn Research Center Solar Cell and Photovoltaic Materials Experiment Onboard the International Space Station

NASA Technical Reports Server (NTRS)

Myers, Matthew G.; Prokop, Norman F.; Krasowski, Michael J.; Piszczor, Michael F.; McNatt, Jeremiah S.

2016-01-01

Accurate air mass zero (AM0) measurement is essential for the evaluation of new photovoltaic (PV) technology for space solar cells. The NASA Glenn Research Center (GRC) has flown an experiment designed to measure the electrical performance of several solar cells onboard NASA Goddard Space Flight Center's (GSFC) Robotic Refueling Mission's (RRM) Task Board 4 (TB4) on the exterior of the International Space Station (ISS). Four industry and government partners provided advanced PV devices for measurement and orbital environment testing. The experiment was positioned on the exterior of the station for approximately eight months, and was completely self-contained, providing its own power and internal data storage. Several new cell technologies including four-junction (4J) Inverted Metamorphic Multi-Junction (IMM) cells were evaluated and the results will be compared to ground-based measurement methods.

Performance Evaluation of III-V Hetero/Homojunction Esaki Tunnel Diodes on Si and Lattice Matched Substrates

NASA Astrophysics Data System (ADS)

Thomas, Paul M.

Understanding of quantum tunneling phenomenon in semiconductor systems is increasingly important as CMOS replacement technologies are investigated. This work studies a variety of heterojunction materials and types to increase tunnel currents to CMOS competitive levels and to understand how integration onto Si substrates affects performance. Esaki tunnel diodes were grown by Molecular Beam Epitaxy (MBE) on Si substrates via a graded buffer and control Esaki tunnel diodes grown on lattice matched substrates for this work. Peak current density for each diode is extracted and benchmarked to build an empirical data set for predicting diode performance. Additionally, statistics are used as tool to show peak to valley ratio for the III-V on Si sample and the control perform similarly below a threshold area. This work has applications beyond logic, as multijunction solar cell, heterojunction bipolar transistor, and light emitting diode designs all benefit from better tunnel contact design.

Cell chip temperature measurements in different operation regimes of HCPV modules

NASA Astrophysics Data System (ADS)

Rumyantsev, V. D.; Chekalin, A. V.; Davidyuk, N. Yu.; Malevskiy, D. A.; Pokrovskiy, P. V.; Sadchikov, N. A.; Pan'chak, A. N.

2013-09-01

A new method has been developed for accurate measurements of the solar cell temperature in maximum power point (MPP) operation regime in comparison with that in open circuit (OC) regime (TMPP and TOC). For this, an electronic circuit has been elaborated for fast variation of the cell load conditions and for voltage measurements, so that VOC values could serve as an indicator of TMPP at the first moment after the load disconnection. The method was verified in indoor investigations of the single-junction AlGaAs/GaAs cells under CW laser irradiation, where different modifications of the heat spreaders were involved. PV modules of the "SMALFOC" design (Small-size concentrators; Multijunction cells; "All-glass" structure; Lamination technology; Fresnel Optics for Concentration) with triple-junction InGaP/GaAs/Ge cells were examined outdoors to evaluate temperature regimes of their operation.

Excited State Properties of Hybrid Perovskites.

PubMed

Saba, Michele; Quochi, Francesco; Mura, Andrea; Bongiovanni, Giovanni

2016-01-19

Metal halide perovskites have come to the attention of the scientific community for the progress achieved in solar light conversion. Energy sustainability is one of the priorities of our society, and materials advancements resulting in low-cost but efficient solar cells and large-area lighting devices represent a major goal for applied research. From a basic point of view, perovskites are an exotic class of hybrid materials combining some merits of organic and inorganic semiconductors: large optical absorption, large mobilities, and tunable band gap together with the possibility to be processed in solution. When a novel class of promising semiconductors comes into the limelight, lively discussions ensue on the photophysics of band-edge excitations, because just the states close to the band edge are entailed in energy/charge transport and light emission. This was the case several decades ago for III-V semiconductors, it has been up to 10 years ago for organics, and it is currently the case for perovskites. Our aim in this Account is to rationalize the body of experimental evidence on perovskite photophysics in a coherent theoretical framework, borrowing from the knowledge acquired over the years in materials optoelectronics. A crucial question is whether photon absorption leads to a population of unbound, conductive free charges or instead excitons, neutral and insulating bound states created by Coulomb interaction just below the energy of the band gap. We first focus on the experimental estimates of the exciton binding energy (Eb): at room temperature, Eb is comparable to the thermal energy kBT in MAPbI3 and increases up to values 2-3kBT in wide band gap MAPbBr3 and MAPbCl3. Statistical considerations predict that these values, even though comparable to or larger than thermal energy, let free carriers prevail over bound excitons for all levels of excitation densities relevant for devices. The analysis of photophysics evidence confirms that all hybrid halide perovskites behave as free-charge semiconductors. Thanks to such property, in combination with band gap energies covering the entire solar spectrum, perovskites represent a promising materials platform for highly efficient, single and multijunction solar cells. Concerning the use of perovskites as color-tunable materials in light emitting devices, free-charges are not the preferred species, as they recombine radiatively through a bimolecular process that is inefficient at the charge-injection levels typical of LED operation. Strategies to overcome this limit, and thus extend the use of perovskite materials beyond solar energy conversion, could be borrowed from inorganic semiconductor optoelectronics and include the fabrication of nanostructures with reduced dimensionality to alter the electronic density of states, as well as engineering composite materials.

Identification of vibrational signatures from short chains of interlinked molecule-nanoparticle junctions obtained by inelastic electron tunnelling spectroscopy

NASA Astrophysics Data System (ADS)

Jafri, S. H. M.; Löfås, H.; Fransson, J.; Blom, T.; Grigoriev, A.; Wallner, A.; Ahuja, R.; Ottosson, H.; Leifer, K.

2013-05-01

Short chains containing a series of metal-molecule-nanoparticle nanojunctions are a nano-material system with the potential to give electrical signatures close to those from single molecule experiments while enabling us to build portable devices on a chip. Inelastic electron tunnelling spectroscopy (IETS) measurements provide one of the most characteristic electrical signals of single and few molecules. In interlinked molecule-nanoparticle (NP) chains containing typically 5-7 molecules in a chain, the spectrum is expected to be a superposition of the vibrational signatures of individual molecules. We have established a stable and reproducible molecule-AuNP multi-junction by placing a few 1,8-octanedithiol (ODT) molecules onto a versatile and portable nanoparticle-nanoelectrode platform and measured for the first time vibrational molecular signatures at complex and coupled few-molecule-NP junctions. From quantum transport calculations, we model the IETS spectra and identify vibrational modes as well as the number of molecules contributing to the electron transport in the measured spectra.Short chains containing a series of metal-molecule-nanoparticle nanojunctions are a nano-material system with the potential to give electrical signatures close to those from single molecule experiments while enabling us to build portable devices on a chip. Inelastic electron tunnelling spectroscopy (IETS) measurements provide one of the most characteristic electrical signals of single and few molecules. In interlinked molecule-nanoparticle (NP) chains containing typically 5-7 molecules in a chain, the spectrum is expected to be a superposition of the vibrational signatures of individual molecules. We have established a stable and reproducible molecule-AuNP multi-junction by placing a few 1,8-octanedithiol (ODT) molecules onto a versatile and portable nanoparticle-nanoelectrode platform and measured for the first time vibrational molecular signatures at complex and coupled few-molecule-NP junctions. From quantum transport calculations, we model the IETS spectra and identify vibrational modes as well as the number of molecules contributing to the electron transport in the measured spectra. Electronic supplementary information (ESI) available: Methods and materials. Details of the ab initio calculation of molecular vibrations and inelastic spectra of ODT between two Au electrodes. A model of carrier transport through the molecular junctions. See DOI: 10.1039/c3nr00505d

Deployable aerospace PV array based on amorphous silicon alloys

NASA Technical Reports Server (NTRS)

Hanak, Joseph J.; Walter, Lee; Dobias, David; Flaisher, Harvey

1989-01-01

The development of the first commercial, ultralight, flexible, deployable, PV array for aerospace applications is discussed. It is based on thin-film, amorphous silicon alloy, multijunction, solar cells deposited on a thin metal or polymer by a proprietary, roll-to-roll process. The array generates over 200 W at AM0 and is made of 20 giant cells, each 54 cm x 29 cm (1566 sq cm in area). Each cell is protected with bypass diodes. Fully encapsulated array blanket and the deployment mechanism weigh about 800 and 500 g, respectively. These data yield power per area ratio of over 60 W/sq m specific power of over 250 W/kg (4 kg/kW) for the blanket and 154 W/kg (6.5 kg/kW) for the power system. When stowed, the array is rolled up to a diameter of 7 cm and a length of 1.11 m. It is deployed quickly to its full area of 2.92 m x 1.11 m, for instant power. Potential applications include power for lightweight space vehicles, high altitude balloons, remotely piloted and tethered vehicles. These developments signal the dawning of a new age of lightweight, deployable, low-cost space arrays in the range from tens to tens of thousands of watts for near-term applications and the feasibility of multi-100 kW to MW arrays for future needs.

Deployable aerospace PV array based on amorphous silicon alloys

NASA Astrophysics Data System (ADS)

Hanak, Joseph J.; Walter, Lee; Dobias, David; Flaisher, Harvey

1989-04-01

The development of the first commercial, ultralight, flexible, deployable, PV array for aerospace applications is discussed. It is based on thin-film, amorphous silicon alloy, multijunction, solar cells deposited on a thin metal or polymer by a proprietary, roll-to-roll process. The array generates over 200 W at AM0 and is made of 20 giant cells, each 54 cm x 29 cm (1566 sq cm in area). Each cell is protected with bypass diodes. Fully encapsulated array blanket and the deployment mechanism weigh about 800 and 500 g, respectively. These data yield power per area ratio of over 60 W/sq m specific power of over 250 W/kg (4 kg/kW) for the blanket and 154 W/kg (6.5 kg/kW) for the power system. When stowed, the array is rolled up to a diameter of 7 cm and a length of 1.11 m. It is deployed quickly to its full area of 2.92 m x 1.11 m, for instant power. Potential applications include power for lightweight space vehicles, high altitude balloons, remotely piloted and tethered vehicles. These developments signal the dawning of a new age of lightweight, deployable, low-cost space arrays in the range from tens to tens of thousands of watts for near-term applications and the feasibility of multi-100 kW to MW arrays for future needs.

FACT, Mega-ROSA, SOLAROSA

NASA Technical Reports Server (NTRS)

Spence, Brian; White, Steve; Schmid, Kevin; Douglas Mark

2012-01-01

The Flexible Array Concentrator Technology (FACT) is a lightweight, high-performance reflective concentrator blanket assembly that can be used on flexible solar array blankets. The FACT concentrator replaces every other row of solar cells on a solar array blanket, significantly reducing the cost of the array. The modular design is highly scalable for the array system designer, and exhibits compact stowage, good off-pointing acceptance, and mass/cost savings. The assembly s relatively low concentration ratio, accompanied by a large radiative area, provides for a low cell operating temperature, and eliminates many of the thermal problems inherent in high-concentration-ratio designs. Unlike other reflector technologies, the FACT concentrator modules function on both z-fold and rolled flexible solar array blankets, as well as rigid array systems. Mega-ROSA (Mega Roll-Out Solar Array) is a new, highly modularized and extremely scalable version of ROSA that provides immense power level range capability from 100 kW to several MW in size. Mega-ROSA will enable extremely high-power spacecraft and SEP-powered missions, including space-tug and largescale planetary science and lunar/asteroid exploration missions. Mega-ROSA's inherent broad power scalability is achieved while retaining ROSA s solar array performance metrics and missionenabling features for lightweight, compact stowage volume and affordability. This innovation will enable future ultra-high-power missions through lowcost (25 to 50% cost savings, depending on PV and blanket technology), lightweight, high specific power (greater than 200 to 400 Watts per kilogram BOL (beginning-of-life) at the wing level depending on PV and blanket technology), compact stowage volume (greater than 50 kilowatts per cubic meter for very large arrays), high reliability, platform simplicity (low failure modes), high deployed strength/stiffness when scaled to huge sizes, and high-voltage operation capability. Mega-ROSA is adaptable to all photovoltaic and concentrator flexible blanket technologies, and can readily accommodate standard multijunction and emerging ultra-lightweight IMM (inverted metamorphic) photovoltaic flexible blanket assemblies, as well as ENTECHs Stretched Lens Array (SLA) and DSSs (Deployable Space Systems) FACT, which allows for cost reduction at the array level.

High field side launch of RF waves: A new approach to reactor actuators

NASA Astrophysics Data System (ADS)

Wallace, G. M.; Baek, S. G.; Bonoli, P. T.; Faust, I. C.; LaBombard, B. L.; Lin, Y.; Mumgaard, R. T.; Parker, R. R.; Shiraiwa, S.; Vieira, R.; Whyte, D. G.; Wukitch, S. J.

2015-12-01

Launching radio frequency (RF) waves from the high field side (HFS) of a tokamak offers significant advantages over low field side (LFS) launch with respect to both wave physics and plasma material interactions (PMI). For lower hybrid (LH) waves, the higher magnetic field opens the window between wave accessibility (n∥≡c k∥/ω >√{1 -ωpi 2/ω2+ωpe 2/ωce 2 }+ωp e/|ωc e| ) and the condition for strong electron Landau damping (n∥˜√{30 /Te } with Te in keV), allowing LH waves from the HFS to penetrate into the core of a burning plasma, while waves launched from the LFS are restricted to the periphery of the plasma. The lower n∥ of waves absorbed at higher Te yields a higher current drive efficiency as well. In the ion cyclotron range of frequencies (ICRF), HFS launch allows for direct access to the mode conversion layer where mode converted waves absorb strongly on thermal electrons and ions, thus avoiding the generation of energetic minority ion tails. The absence of turbulent heat and particle fluxes on the HFS, particularly in double null configuration, makes it the ideal location to minimize PMI damage to the antenna structure. The quiescent SOL also eliminates the need to couple LH waves across a long distance to the separatrix, as the antenna can be located close to plasma without risking damage to the structure. Improved impurity screening on the HFS will help eliminate the long-standing issues of high Z impurity accumulation with ICRF. Looking toward a fusion reactor, the HFS is the only possible location for a plasma-facing RF antenna that will survive long-term. By integrating the antenna into the blanket module it is possible to improve the tritium breeding ratio compared with an antenna occupying an equatorial port plug. Blanket modules will require remote handling of numerous cooling pipes and electrical connections, and the addition of transmission lines will not substantially increase the level of complexity. The obvious engineering challenges associated with locating antenna structures on the HFS can be overcome if HFS antennas are incorporated in the overall experimental design from the start. The Advanced Divertor and radio frequency eXperiment(ADX) will include LH and ICRF antennas located on the HFS. Compact antenna designs based on proven technologies (e.g. multi-junction and "4-way splitter" antennas) fit within the available space on the HFS of ADX. Field aligned ICRF antennas are also located on the HFS. The ADX vacuum vessel design includes dedicated space for transmission lines, pressure windows, and vacuum feedthrus for accessing the HFS wall.

A 100 kW-Class Technology Demonstrator for Space Solar Power

NASA Technical Reports Server (NTRS)

Carrington, Connie; Howell, Joe; Day, Greg

2004-01-01

A first step in the development of solar power from space is the flight demonstration of critical technologies. These fundamental technologies include efficient solar power collection and generation, power management and distribution, and thermal management. In addition, the integration and utilization of these technologies into a viable satellite bus could provide an energy-rich platform for a portfolio of payload experiments such as wireless power transmission (WPT). This paper presents the preliminary design of a concept for a 100 kW-class fiee-flying platform suitable for flight demonstration of technology experiments. Recent space solar power (SSP) studies by NASA have taken a stepping stones approach that lead to the gigawatt systems necessary to cost-effectively deliver power from space. These steps start with a 100 kW-class satellite, leading to a 500 kW and then a 1 MW-class platform. Later steps develop a 100 M W bus that could eventually lead to a 1-2 GW pilot plant for SSP. Our studies have shown that a modular approach is cost effective. Modular designs include individual laser-power-beaming satellites that fly in constellations or that are autonomously assembled into larger structures at geosynchronous orbit (GEO). Microwave power-beamed approaches are also modularized into large numbers of identical units of solar arrays, power converters, or supporting structures for arrays and microwave transmitting antennas. A cost-effective approach to launching these modular units is to use existing Earth-to-orbit (ETO) launch systems, in which the modules are dropped into low Earth orbit (LEO) and then the modules perform their own orbit transfer to GEO using expendable solar arrays to power solar electric thrusters. At GEO, the modules either rendezvous and are assembled robotically into larger platforms, or are deployed into constellations of identical laser power-beaming satellites. Since solar electric propulsion by the modules is cost-effective for both self-transport of the modules from LEO to GEO, and for on-orbit stationkeeping and repositioning capability during the satellite's lifetime, this technology is also critical in technology development for SSP. The 100 kW-class technology demonstrator will utilize advanced solar power collection and generation technologies, power management and distribution, advanced thermal management, and solar electric propulsion. State-of-the-art solar concentrators, highly efficient multi-junction solar cells, integrated thermal management on the arrays, and innovative deployable structure design and packaging make the 100 kW satellite feasible for launch on one existing launch vehicle. Early SSP studies showed that a major percentage of the on-orbit mass for power-beaming satellites was from massive power converters at the solar arrays, at the bus, at the power transmitter, or at combinations of these locations. Higher voltage mays and power management and distribution (PMAD) systems reduce or eliminate the need for many of these massive power converters, and could enable direct-drive of high-voltage solar electric thrusters. Lightweight, highly efficient thermal management systems are a critical technology that must be developed and flown for SSP feasibility. Large amounts of power on satellites imply that large amounts of waste heat will need to be managed. In addition, several of the more innovative lightweight configurations proposed for SSP satellites take advantage of solar concentrators that are intractable without advanced thermal management technologies for the solar arrays. These thermal management systems include efficient interfaces with the WPT systems or other high-power technology experiments, lightweight deployable radiators that can be easily integrated into satellite buses, and efficient reliable thermal distribution systems that can pipe heat from the technology experiments to the radiators. In addition to demonstrating the integration and use of these mission-ctical technologies, the 100 kw-class satellite will provide a large experiment deck for a portfolio of technology experiments. Current plans for this technology demonstrator allow 2000 kg of payload capability and up to 100 kW of power. The technology experiments could include one or more wireless power transmission demonstrations, either to the Earth s surface or to a suitable space-based receiver. Technology experiments to quantify the on-orbit performance of critical technologies for SSP or space exploration are welcomed. In addition, the technology experiments provide an opportunity for international cooperation, to advance technology readiness levels of SSP technologies that require flight demonstration. This paper will present the preliminary design for a 100 kW solar-powered satellite and a variety of technology experiments that may be suitable for flight demonstration. In addition, a space-to-Earth-surface WPT experiment will be discussed.

Quantum well multijunction photovoltaic cell

DOEpatents

Chaffin, R.J.; Osbourn, G.C.

1983-07-08

A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a p-region on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-region and all n-type in the n-region; each of said series of layers comprising alternating barrier and quantum well layers, each barrier layer comprising a semiconductor material having a first bandgap and each quantum well layer comprising a semiconductor material having a second bandgap when in bulk thickness which is narrower than said first bandgap, the barrier layers sandwiching each quantum well layer and each quantum well layer being sufficiently thin that the width of its bandgap is between said first and second bandgaps, such that radiation incident on said cell and above an energy determined by the bandgap of the quantum well layers will be absorbed and will produce an electrical potential across said junction.

Chemically Deposited Thin-Film Solar Cell Materials

NASA Technical Reports Server (NTRS)

Raffaelle, R.; Junek, W.; Gorse, J.; Thompson, T.; Harris, J.; Hehemann, D.; Hepp, A.; Rybicki, G.

2005-01-01

We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

Identification of vibrational signatures from short chains of interlinked molecule-nanoparticle junctions obtained by inelastic electron tunnelling spectroscopy.

PubMed

Jafri, S H M; Löfås, H; Fransson, J; Blom, T; Grigoriev, A; Wallner, A; Ahuja, R; Ottosson, H; Leifer, K

2013-06-07

Short chains containing a series of metal-molecule-nanoparticle nanojunctions are a nano-material system with the potential to give electrical signatures close to those from single molecule experiments while enabling us to build portable devices on a chip. Inelastic electron tunnelling spectroscopy (IETS) measurements provide one of the most characteristic electrical signals of single and few molecules. In interlinked molecule-nanoparticle (NP) chains containing typically 5-7 molecules in a chain, the spectrum is expected to be a superposition of the vibrational signatures of individual molecules. We have established a stable and reproducible molecule-AuNP multi-junction by placing a few 1,8-octanedithiol (ODT) molecules onto a versatile and portable nanoparticle-nanoelectrode platform and measured for the first time vibrational molecular signatures at complex and coupled few-molecule-NP junctions. From quantum transport calculations, we model the IETS spectra and identify vibrational modes as well as the number of molecules contributing to the electron transport in the measured spectra.

Planar doped barrier subharmonic mixers

NASA Technical Reports Server (NTRS)

Lee, T. H.; East, J. R.; Haddad, G. I.

1992-01-01

The Planar Doped Barrier (PDB) diode is a device consisting of a p(+) doping spike between two intrinsic layers and n(+) ohmic contacts. This device has the advantages of controllable barrier height, diode capacitance and forward to reverse current ratio. A symmetrically designed PDB has an anti-symmetric current vs. voltage characteristic and is ideal for use as millimeter wave subharmonic mixers. We have fabricated such devices with barrier heights of 0.3, 0.5 and 0.7 volts from GaAs and InGaAs using a multijunction honeycomb structure with junction diameters between one and ten microns. Initial RF measurements are encouraging. The 0.7 volt barrier height 4 micron GaAs devices were tested as subharmonic mixers at 202 GHz with an IF frequency of 1 GHz and had 18 dB of conversion loss. The estimated mismatch loss was 7 dB and was due to higher diode capacitance. The LO frequency was 100.5 GHz and the pump power was 8 mW.

Optimized design and research of secondary microprism for dense array concentrating photovoltaic module

NASA Astrophysics Data System (ADS)

Yang, Guanghui; Chen, Bingzhen; Liu, Youqiang; Guo, Limin; Yao, Shun; Wang, Zhiyong

2015-10-01

As the critical component of concentrating photovoltaic module, secondary concentrators can be effective in increasing the acceptance angle and incident light, as well as improving the energy uniformity of focal spots. This paper presents a design of transmission-type secondary microprism for dense array concentrating photovoltaic module. The 3-D model of this design is established by Solidworks and important parameters such as inclination angle and component height are optimized using Zemax. According to the design and simulation results, several secondary microprisms with different parameters are fabricated and tested in combination with Fresnel lens and multi-junction solar cell. The sun-simulator IV test results show that the combination has the highest output power when secondary microprism height is 5mm and top facet side length is 7mm. Compared with the case without secondary microprism, the output power can improve 11% after the employment of secondary microprisms, indicating the indispensability of secondary microprisms in concentrating photovoltaic module.

Quantum well multijunction photovoltaic cell

DOEpatents

Chaffin, Roger J.; Osbourn, Gordon C.

1987-01-01

A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a p-region on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-region and all n-type in the n-region; each of said series of layers comprising alternating barrier and quantum well layers, each barrier layer comprising a semiconductor material having a first bandgap and each quantum well layer comprising a semiconductor material having a second bandgap when in bulk thickness which is narrower than said first bandgap, the barrier layers sandwiching each quantum well layer and each quantum well layer being sufficiently thin that the width of its bandgap is between said first and second bandgaps, such that radiation incident on said cell and above an energy determined by the bandgap of the quantum well layers will be absorbed and will produce an electrical potential across said junction.

Transparent Conductive Adhesives for Tandem Solar Cells Using Polymer-Particle Composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klein, Talysa; Lee, Benjamin G; Schnabel, Manuel

2018-02-14

Transparent conductive adhesives (TCAs) can enable conductivity between two substrates, which is useful for a wide range of electronic devices. Here, we have developed a TCA composed of a polymer-particle blend with ethylene-vinyl acetate as the transparent adhesive and metal-coated flexible poly(methyl methacrylate) microspheres as the conductive particles that can provide conductivity and adhesion regardless of the surface texture. This TCA layer was designed to be nearly transparent, conductive in only the out-of-plane direction, and of practical adhesive strength to hold the substrates together. The series resistance was measured at 0.3 and 0.8 O cm2 for 8 and 0.2% particlemore » coverage, respectively, while remaining over 92% was transparent in both cases. For applications in photovoltaic devices, such as mechanically stacked multijunction III-V/Si cells, a TCA with 1% particle coverage will have less than 0.5% power loss due to the resistance and less than 1% shading loss to the bottom cell.« less

Synthesis and Characterization of Doped ZnO Nanomaterials: Potential Application in Third Generation Solar Cells

NASA Astrophysics Data System (ADS)

Adcock Smith, Echo D.

ZnO nanomaterials are being incorporated into next-generation solar cell designs including dye-sensitized solar cells, multijunction solar cells, and quantum dot sensitized solar cells. ZnO nanorod (NR) arrays and nanoparticles (NP) used in these devices are typically fabricated using chemical vapor deposition and/or high-temperature reaction conditions. These methods are costly, require high energy, pressure or excessive time, but produce repeatable, defined growth that is capable of easily incorporating metal dopants. Less expensive methods of fabrication such as chemical bath deposition (CBD) eliminate the costly steps but can suffer from undefined growth, excessive waste and have a difficult time incorporating dopants into ZnO materials without additives or increased pH. This dissertation presents a novel method of growing cobalt and vanadium doped ZnO nanomaterials through microwave synthesis. The cobalt growth was compared to standard CBD and found to be faster, less wasteful, reproducible and better at incorporating cobalt ions into the ZnO lattice than typical oven CBD method. The vanadium doped ZnO microwave synthesis procedure was found to produce nanorods, nanorod arrays, and nanoparticles simultaneously. Neither the cobalt nor the vanadium growth required pH changes, catalysts or additives to assist in doping and therefore use less materials than traditional CBD. This research is important because it offers a simple, quick way to grow ZnO nanostructures and is the first to report on growing both cobalt and vanadium doped zinc oxide nanorod arrays using microwave synthesis. This synthesis method presented is a viable candidate for replacing conventional growth synthesis which will result in lowering the cost and time of production of photovoltaics while helping drive forward the development of next-generation solar cells.

dc properties of series-parallel arrays of Josephson junctions in an external magnetic field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lewandowski, S.J.

1991-04-01

A detailed dc theory of superconducting multijunction interferometers has previously been developed by several authors for the case of parallel junction arrays. The theory is now extended to cover the case of a loop containing several junctions connected in series. The problem is closely associated with high-{ital T}{sub {ital c}} superconductors and their clusters of intrinsic Josephson junctions. These materials exhibit spontaneous interferometric effects, and there is no reason to assume that the intrinsic junctions form only parallel arrays. A simple formalism of phase states is developed in order to express the superconducting phase differences across the junctions forming amore » series array as functions of the phase difference across the weakest junction of the system, and to relate the differences in critical currents of the junctions to gaps in the allowed ranges of their phase functions. This formalism is used to investigate the energy states of the array, which in the case of different junctions are split and separated by energy barriers of height depending on the phase gaps. Modifications of the washboard model of a single junction are shown. Next a superconducting inductive loop containing a series array of two junctions is considered, and this model is used to demonstrate the transitions between phase states and the associated instabilities. Finally, the critical current of a parallel connection of two series arrays is analyzed and shown to be a multivalued function of the externally applied magnetic flux. The instabilities caused by the presence of intrinsic serial junctions in granular high-{ital T}{sub {ital c}} materials are pointed out as a potential source of additional noise.« less

Photovoltaic and photoelectrochemical conversion of solar energy.

PubMed

Grätzel, Michael

2007-04-15

The Sun provides approximately 100,000 terawatts to the Earth which is about 10000 times more than the present rate of the world's present energy consumption. Photovoltaic cells are being increasingly used to tap into this huge resource and will play a key role in future sustainable energy systems. So far, solid-state junction devices, usually made of silicon, crystalline or amorphous, and profiting from the experience and material availability resulting from the semiconductor industry, have dominated photovoltaic solar energy converters. These systems have by now attained a mature state serving a rapidly growing market, expected to rise to 300 GW by 2030. However, the cost of photovoltaic electricity production is still too high to be competitive with nuclear or fossil energy. Thin film photovoltaic cells made of CuInSe or CdTe are being increasingly employed along with amorphous silicon. The recently discovered cells based on mesoscopic inorganic or organic semiconductors commonly referred to as 'bulk' junctions due to their three-dimensional structure are very attractive alternatives which offer the prospect of very low cost fabrication. The prototype of this family of devices is the dye-sensitized solar cell (DSC), which accomplishes the optical absorption and the charge separation processes by the association of a sensitizer as light-absorbing material with a wide band gap semiconductor of mesoporous or nanocrystalline morphology. Research is booming also in the area of third generation photovoltaic cells where multi-junction devices and a recent breakthrough concerning multiple carrier generation in quantum dot absorbers offer promising perspectives.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulte, Kevin L.; France, Ryan M.; McMahon, William E.

In this work we develop control over dislocation glide dynamics in Ga xIn 1-xP compositionally graded buffer layers (CGBs) through control of CuPt ordering on the group-III sublattice. The ordered structure is metastable in the bulk, so any glissile dislocation that disrupts the ordered pattern will release stored energy, and experience an increased glide force. Here we show how this connection between atomic ordering and dislocation glide force can be exploited to control the threading dislocation density (TDD) in Ga xIn 1-xP CGBs. When ordered Ga xIn 1-xP is graded from the GaAs lattice constant to InP, the order parametermore » ..eta.. decreases as x decreases, and dislocation glide switches from one set of glide planes to the other. This glide plane switch (GPS) is accompanied by the nucleation of dislocations on the new glide plane, which typically leads to increased TDD. We develop control of the GPS position within a Ga xIn 1-xP CGB through manipulation of deposition temperature, surfactant concentration, and strain-grading rate. We demonstrate a two-stage Ga xIn 1-xP CGB from GaAs to InP with sufficiently low TDD for high performance devices, such as the 4-junction inverted metamorphic multi-junction solar cell, achieved through careful control the GPS position. Here, experimental results are analyzed within the context of a model that considers the force balance on dislocations on the two competing glide planes as a function of the degree of ordering.« less

Optimization of Al2O3/TiO2/Al 2O3 Multilayer Antireflection Coating With X-Ray Scattering Techniques

NASA Astrophysics Data System (ADS)

Li, Chao

Broadband multilayer antireflection coatings (ARCs) are keys to improving solar cell efficiencies. The goal of this dissertation is to optimize the multilayer Al2O3/TiO2/Al2O 3 ARC designed for a III-V space multi-junction solar cell with understanding influences of post-annealing and varying deposition parameters on the optical properties. Accurately measuring optical properties is important in accessing optical performances of ARCs. The multilayer Al2O3/TiO 2/Al2O3 ARC and individual Al2O 3 and TiO2 layers were characterized by a novel X-ray reflectivity (XRR) method and a combined method of grazing-incidence small angle X-ray scattering (GISAXS), atomic force microscopy (AFM), and XRR developed in this study. The novel XRR method combining an enhanced Fourier analysis with specular XRR simulation effectively determines layer thicknesses and surface and interface roughnesses and/or grading with sub-nanometer precision, and densities less than three percent uncertainty. Also, the combined method of GISAXS, AFM, and XRR characterizes the distribution of pore size with one-nanometer uncertainty. Unique to this method, the diffuse scattering from surface and interface roughnesses is estimated with surface parameters (root mean square roughness sigma, lateral correlation length ξ, and Hurst parameter h) obtained from AFM, and layer densities, surface grading and interface roughness/grading obtained from specular XRR. It is then separated from pore scattering. These X-ray scattering techniques obtained consistent results and were validated by other techniques including optical reflectance, spectroscopic ellipsometry (SE), glancing incidence X-ray diffraction, transmission electron microscopy and energy dispersive X-ray spectroscopy. The ARCs were deposited by atomic layer deposition with standard parameters at 200 °C. The as-deposited individual Al2O3 layer on Si is porous and amorphous as indicated by the combined methods of GISAXS, AFM, and XRR. Both post-annealing at 400 °C for 40 min in air and varying ALD parameters can eliminate pores, and lead to consistent increases in density and refractive index determined by the XRR method, SE, and optical reflectance measurements. After annealing, the layer remains amorphous. On the other hand, the as-deposited TiO 2 layer is non-porous and amorphous. It is densified and crystallized after annealing at 400 °C for 10 min in air. The multilayer Al2O 3/TiO2/Al2O3 ARC deposited on Si has surface and interface roughnesses and/or grading on the order of one nanometer. Annealing at 400 °C for 10 min in air induces densification and crystallization of the amorphous TiO2 layer as well as possible chemical reactions between TiO2 and Si diffusing from the substrate. On the other hand, Al2O3 layers remain amorphous after annealing. The thickness of the top Al2O3 layer decreases - likely due to interdiffusion between the top two layers and loss of hydrogen from hydroxyl groups initially present in the ALD layers. The thickness of the bottom Al2O3 layer increases, probably due to the diffusion of Si atoms into the bottom layer. In addition, the multilayer Al 2O3/TiO2/Al2O3 ARC was deposited on AlInP (30nm) / GaInP (100nm) / GaAs that includes the topmost layers of III-V multi-junction solar cells. Reflectance below 5 % is achieved within nearly the whole wavelength range of the current-limiting sub-cell. Also, internal scattering occurs in the TiO2 layer possibly associated with the initiated crystallization in the TiO2 layer while absent in the amorphous Al2O3 layers.

POWOW: A Modular, High Power Spacecraft Concept

NASA Technical Reports Server (NTRS)

Brandhorst, Henry W., Jr.

2000-01-01

A robust space infrastructure encompasses a broad range of mission needs along with an imperative to reduce costs of satellites meeting those needs. A critical commodity for science, commercial and civil satellites is power at an affordable cost. The POWOW (POwer WithOut Wires) spacecraft concept was created to provide, at one end of the scale, multi-megawatts of power yet also be composed of modules that can meet spacecraft needs in the kilowatt range. With support from the NASA-sponsored Space Solar Power Exploratory Research and Technology Program, the POWOW spacecraft concept was designed to meet Mars mission needs - while at the same time having elements applicable to a range of other missions. At Mars, the vehicle would reside in an aerosynchronous orbit and beam power to a variety of locations on the surface. It is the purpose of this paper to present the latest concept design results. The Space Power Institute along with four companies: Able Engineering, Inc., Entech, Inc., Primex Aerospace Co., and TECSTAR have produced a modular, power-rich electrically propelled spacecraft design that meets these requirements. In addition, it also meets a range of civil and commercial needs. The spacecraft design is based on multijunction Ill-V solar cells, the new Stretched Lens Aurora (SLA) module, a lightweight array design based on a multiplicity of 8 kW end-of-life subarrays and electric thrusters. The solar cells have excellent radiation resistance and efficiencies above 30%. The SLA has a concentration ratio up to 15x while maintaining an operating temperature of 80 C. The design of the 8 kW array building block will be presented and its applicability to commercial and government missions will be discussed. Electric propulsion options include Hall, MPD and ion thrusters of various power levels and trade studies have been conducted to define the most advantageous options. The present baseline spacecraft design providing 900 kW using technologies expected to be available in 2003 will be described. Areal power densities of nearly 400 W/meters squared at 80 C operating temperatures and wing level specific powers of over 400 W/kg are projected. Details of trip times and payloads to Mars will be presented as well as trade studies of various electric propulsion options. Trip times compare favorably with chemical propulsion options. Because the design is modular, learning curve methodology can be applied to determine expected cost reductions. These results will also be included. This paper has not been presented at a previous meeting.

Sulfur passivation techniques for III-V wafer bonding

NASA Astrophysics Data System (ADS)

Jackson, Michael James

The use of direct wafer bonding in a multijunction III-V solar cell structure requires the formation of a low resistance bonded interface with minimal thermal treatment. A wafer bonded interface behaves as two independent surfaces in close proximity, hence a major source of resistance is Fermi level pinning common in III-V surfaces. This study demonstrates the use of sulfur passivation in III-V wafer bonding to reduce the energy barrier at the interface. Two different sulfur passivation processes are addressed. A dry sulfur passivation method that utilizes elemental sulfur vapor activated by ultraviolet light in vacuum is compared with aqueous sulfide and native oxide etch treatments. Through the addition of a sulfur desorption step in vacuum, the UV-S treatment achieves bondable surfaces free of particles contamination or surface roughening. X-ray photoelectron spectroscopy measurements of the sulfur treated GaAs surfaces find lower levels of oxide and the appearance of sulfide species. After 4 hrs of air exposure, the UV-S treated GaAs actually showed an increase in the amount of sulfide bonded to the semiconductor, resulting in less oxidation compared to the aqueous sulfide treatment. Large area bonding is achieved for sulfur treated GaAs / GaAs and InP / InP with bulk fracture strength achieved after annealing at 400 °C and 300 °C respectively, without large compressive forces. The electrical conductivity across a sulfur treated 400 °C bonded n-GaAs/n-GaAs interface significantly increased with a short anneal (1-2 minutes) at elevated temperatures (50--600 °C). Interfaces treated with the NH4OH oxide etch, on the other hand, exhibited only mild improvement in accordance with previously published studies in this area. TEM and STEM images revealed similar interfacial microstructure changes with annealing for both sulfur treated and NH4OH interfaces, whereby some areas have direct semiconductor-semiconductor contact without any interfacial layer. Fitting the observed temperature dependence of zero bias conductance using a model for tunneling through a grain boundary reveals that the addition of sulfur at the interface lowered the interfacial energy barrier by 0.2 eV. The interface resistance for these sulfur-treated structures is less than 0.03 O·cm 2 at room temperature. These results emphasize that sulfur passivation techniques reduce interface states that otherwise limit the implementation of wafer bonding for high efficiency solar cells and other devices.

Selective Area Growth of GaAs on Si Patterned Using Nanoimprint Lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, Emily L.; Makoutz, Emily A.; Horowitz, Kelsey A. W.

Heteroepitaxial selective area growth (SAG) of GaAs on patterned Si substrates is a potential low-cost approach to integrate III-V and Si materials for tandem or multijunction solar cells. The use of nanoscale openings in a dielectric material can minimize nucleation-related defects and allow thinner buffer layers to be used to accommodate lattice mismatch between Si and an epitaxial III-V layer. For photovoltaic applications, the cost of patterning and growth, as well as the impact on the performance of the Si bottom cell must be considered. We present preliminary results on the use of soft nanoimprint lithography (SNIL) to create patternedmore » nucleation templates for the heteroepitaxial SAG of GaAs on Si. We demonstrate that SNIL patterning of passivating layers on the Si substrate improves measured minority carrier properties relative to unprotected Si. Cost modeling of the SNIL process shows that adding a patterning step only adds a minor contribution to the overall cost of a tandem III-V/Si solar cell, and can enable significant savings if it enables thinner buffer layers.« less

Mapping Free-Carriers in Multijunction Silicon Nanowires Using Infrared Near-Field Optical Microscopy.

PubMed

Ritchie, Earl T; Hill, David J; Mastin, Tucker M; Deguzman, Panfilo C; Cahoon, James F; Atkin, Joanna M

2017-11-08

We report the use of infrared (IR) scattering-type scanning near-field optical microscopy (s-SNOM) as a nondestructive method to map free-carriers in axially modulation-doped silicon nanowires (SiNWs) with nanoscale spatial resolution. Using this technique, we can detect local changes in the electrically active doping concentration based on the infrared free-carrier response in SiNWs grown using the vapor-liquid-solid (VLS) method. We demonstrate that IR s-SNOM is sensitive to both p-type and n-type free-carriers for carrier densities above ∼1 × 10 19 cm -3 . We also resolve subtle changes in local conductivity properties, which can be correlated with growth conditions and surface effects. The use of s-SNOM is especially valuable in low mobility materials such as boron-doped p-type SiNWs, where optimization of growth has been difficult to achieve due to the lack of information on dopant distribution and junction properties. s-SNOM can be widely employed for the nondestructive characterization of nanostructured material synthesis and local electronic properties without the need for contacts or inert atmosphere.

Outdoor measurements of a photovoltaic system using diffractive spectrum-splitting and concentration

DOE PAGES

Mohammad, N.; Schulz, M.; Wang, P.; ...

2016-09-16

In a single-bandgap absorber, photons having energy less than the bandgap are not absorbed, while those having energy larger than the bandgap lose the excess energy via thermalization. We present outdoor measurements of a photovoltaic system that overcomes these losses via spectrum splitting and concentration using a planar diffractive optic. The system was comprised of the diffractive optic coupled with GaInP and CIGS solar cells. The optic provides a geometric concentration of 3X for each solar cell. It is easily fabricated by single-step grayscale lithography and it is ultra-thin with a maximum thickness of only 2.5μm. Electrical measurements under directmore » sunlight demonstrated an increase of ~25% in total output power compared to the reference case without spectrum splitting and concentration. Since different bandgaps are in the same plane, the proposed photovoltaic system successfully circumvents the lattice-matching and current-matching issues in conventional tandem multi-junction solar cells. As a result, this system is also tolerant to solar spectrum variation and fill-factor degradation of constitutive solar cells.« less

Outdoor measurements of a photovoltaic system using diffractive spectrum-splitting and concentration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohammad, N.; Schulz, M.; Wang, P.

In a single-bandgap absorber, photons having energy less than the bandgap are not absorbed, while those having energy larger than the bandgap lose the excess energy via thermalization. We present outdoor measurements of a photovoltaic system that overcomes these losses via spectrum splitting and concentration using a planar diffractive optic. The system was comprised of the diffractive optic coupled with GaInP and CIGS solar cells. The optic provides a geometric concentration of 3X for each solar cell. It is easily fabricated by single-step grayscale lithography and it is ultra-thin with a maximum thickness of only 2.5μm. Electrical measurements under directmore » sunlight demonstrated an increase of ~25% in total output power compared to the reference case without spectrum splitting and concentration. Since different bandgaps are in the same plane, the proposed photovoltaic system successfully circumvents the lattice-matching and current-matching issues in conventional tandem multi-junction solar cells. As a result, this system is also tolerant to solar spectrum variation and fill-factor degradation of constitutive solar cells.« less

Integrated Phase Array Antenna/Solar Cell System for Flexible Access Communication (IA/SAC)

NASA Technical Reports Server (NTRS)

Clark, E. B.; Lee, R. Q.; Pal, A. T.; Wilt, D. M.; McElroy, B. D.; Mueller, C. H.

2005-01-01

This paper describes recent efforts to integrate advanced solar cells with printed planar antennas. Several previous attempts have been reported in the literature, but this effort is unique in several ways. It uses Gallium Arsenide (GaAs) multi-junction solar cell technology. The solar cells and antennas will be integrated onto a common GaAs substrate. When fully implemented, IA/SAC will be capable of dynamic beam steering. In addition, this program targets the X-band (8 - 12 GHz) and higher frequencies, as compared to the 2.2 - 2.9 GHz arrays targeted by other organizations. These higher operating frequencies enable a greater bandwidth and thus higher data transfer rates. The first phase of the effort involves the development of 2 x 2 cm GaAs Monolithically Integrated Modules (MIM) with integrated patch antennas on the opposite side of the substrate. Subsequent work will involve the design and development of devices having the GaAs MIMs and the antennas on the same side of the substrate. Results from the phase one efforts will be presented.

A differential spectral responsivity measurement system constructed for determining of the spectral responsivity of a single- and triple-junction photovoltaic cells

NASA Astrophysics Data System (ADS)

Sametoglu, Ferhat; Celikel, Oguz; Witt, Florian

2017-10-01

A differential spectral responsivity (DSR) measurement system has been designed and constructed at National Metrology Institute of Turkey (TUBITAK UME) to determine the spectral responsivity (SR) of a single- or a multi-junction photovoltaic device (solar cell). The DSR setup contains a broad band light bias source composed of a constructed Solar Simulator based on a 1000 W Xe-arc lamp owning a AM-1.5 filter and 250 W quartz-tungsten-halogen lamp, a designed and constructed LED-based Bias Light Sources, a DC voltage bias circuit, and a probe beam optical power tracking and correction circuit controlled with an ADuC847 microcontroller card together with an embedded C based software, designed and constructed in TUBITAK UME under this project. By using the constructed DSR measurement system, the SR calibration of solar cells, the monolitic triple-junction solar cell GaInP/GaInAs/Ge and its corresponding component cells have been performed within the EURAMET Joint Research Project SolCell.

Characterisation of SOL density fluctuations in front of the LHCD PAM launcher in Tore

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oosako, T.; Ekedahl, A.; Goniche, M.

2011-12-23

The density fluctuations, modified by Lower Hybrid Wave (LHW), is analyzed in Tore Supra with reference to the injected LHW power, density and the gap between LCFS (Last Closed Flux Surface) and the PAM (passive-active-multijunction) launcher. The density fluctuations are measured with RF probes installed at the PAM launcher front. A density scan at nominal toroidal field (3.8 T) shows that the fluctuations rate stays nearly constant ({approx}50%) for <3.5x10{sup 19}m{sup -3} and with LHW power up to 2MW. However, when increasing the density above <{approx}4.2x10{sup 19}m{sup -3}, using strong gas puffing, the fluctuation rate increases to >70%more » and is characterized by strong negative spikes, with typical frequency >100kHz. These are most likely originating from acceleration of electrons in the LHW near field due to parasitic absorption, as evidenced on the IR images, showing hot spots on the side limiters.« less

Improving Translation Models for Predicting the Energy Yield of Photovoltaic Power Systems. Cooperative Research and Development Final Report, CRADA Number CRD-13-526

DOE Office of Scientific and Technical Information (OSTI.GOV)

Emery, Keith

2015-08-04

The project under this CRADA will analyze field data of various flat-plate and concentrator module technologies and cell measurements at the laboratory level. The field data will consist of current versus voltage data collected over many years on a latitude tilt test bed for Si, CdTe, amorphous silicon, and CIGS technologies. The concentrator data will be for mirror- and lens-based module designs using multijunction cells. The laboratory data will come from new measurements of cell performance with systematic variation of irradiance, temperature and spectral composition. These measurements will be labor-intensive and the aim will be to cover the widest possiblemore » parameter space for as many different PV samples as possible. The data analysis will require software tools to be developed. These tools will be customized for use with the specific NREL datasets and will be unsuitable for commercial release. The tools will be used to evaluate different translation equations against NREL outdoor datasets.« less

Synthesis And Characterization of Copper Zinc Tin Sulfide Nanoparticles And Thin Films

NASA Astrophysics Data System (ADS)

Khare, Ankur

Copper zinc tin sulfide (Cu2ZnSnS4, or CZTS) is emerging as an alternative material to the present thin film solar cell technologies such as Cu(In,Ga)Se2 and CdTe. All the elements in CZTS are abundant, environmentally benign, and inexpensive. In addition, CZTS has a band gap of ˜1.5 eV, the ideal value for converting the maximum amount of energy from the solar spectrum into electricity. CZTS has a high absorption coefficient (>104 cm-1 in the visible region of the electromagnetic spectrum) and only a few micron thick layer of CZTS can absorb all the photons with energies above its band gap. CZT(S,Se) solar cells have already reached power conversion efficiencies >10%. One of the ways to improve upon the CZTS power conversion efficiency is by using CZTS quantum dots as the photoactive material, which can potentially achieve efficiencies greater than the present thin film technologies at a fraction of the cost. However, two requirements for quantum-dot solar cells have yet to be demonstrated. First, no report has shown quantum confinement in CZTS nanocrystals. Second, the syntheses to date have not provided a range of nanocrystal sizes, which is necessary not only for fundamental studies but also for multijunction photovoltaic architectures. We resolved these two issues by demonstrating a simple synthesis of CZTS, Cu2SnS3, and alloyed (Cu2SnS3) x(ZnS)y nanocrystals with diameters ranging from 2 to 7 nm from diethyldithiocarbamate complexes. As-synthesized nanocrystals were characterized using high resolution transmission electron microscopy, X-ray diffraction, Raman spectroscopy, and energy dispersive spectroscopy to confirm their phase purity. Nanocrystals of diameter less than 5 nm were found to exhibit a shift in their optical absorption spectra towards higher energy consistent with quantum confinement and previous theoretical predictions. Thin films from CZTS nanocrystals deposited on Mo-coated quartz substrates using drop casting were found to be continuous but highly porous. Annealing CZTS nanocrystal films at temperatures as low as 400 °C led to an intense grain growth; however, thin films from CZTS nanocrystals cracked on annealing due to their high porosity. Although quantum confinement in CZTS is only accessible in nanocrystals of diameters less than 5 nm, the high volume of the ligands as compared to the volume of the nanocrystals makes it a challenge to deposit continuous compacted thin films from small nanocrystals. Films deposited from thermal decomposition of a stoichiometric mix of metal dithiocarbamate complexes were found to be predominantly CZTS. These films from complexes were found to be continuous but microporous. The diameter of the spheres making up the microporous structure could be changed by changing the anneal temperature. The structural composition of the final film could be altered by changing the heating rate of the complexes. CZTS exists in three different crystal structures: kesterite, stannite, and pre-mixed Cu-Au (PMCA) structures. Due to the similarity in the crystal structures, it is extremely difficult to distinguish them based on X-ray diffraction. We computed the phonon dispersion curves for the three structures using ab-initio calculations, and found characteristic discontinuities at the Gamma-point which can potentially be used to distinguish the three. In addition, the Gamma-point phonon frequencies, which correspond to the Raman peak positions, for the three structures were found to be shifted from each other by a few wavenumbers. By deconvoluting the experimental Raman spectra for both CZTS and Cu2ZnSnSe4 (CZTSe) using Gaussian peaks, we observed that the most intense Raman scattering peak in both CZTS and CZTSe is a sum of two different peaks which correspond to scattering from their respective kesterite and stannite phases. The electronic, structural, and vibrational properties of a series of CZTS-CZTSe alloys (CZTSSe) were studied using ab-initio calculations. The S-to-Se ratio and the spatial distribution of the anions in the unit cell were found to determine the energy splitting between the electronic states at the top of the valence band and the hole mobility in CZTSSe alloys and solar cells. X-ray diffraction patterns and phonon distribution curves were found to be sensitive to the local anion ordering. The predicted Raman scattering frequencies and their variation with x agree with experimentally determined values and trends.

Reduced dislocation density in Ga xIn 1–xP compositionally graded buffer layers through engineered glide plane switch

DOE PAGES

Schulte, Kevin L.; France, Ryan M.; McMahon, William E.; ...

2016-11-17

In this work we develop control over dislocation glide dynamics in Ga xIn 1-xP compositionally graded buffer layers (CGBs) through control of CuPt ordering on the group-III sublattice. The ordered structure is metastable in the bulk, so any glissile dislocation that disrupts the ordered pattern will release stored energy, and experience an increased glide force. Here we show how this connection between atomic ordering and dislocation glide force can be exploited to control the threading dislocation density (TDD) in Ga xIn 1-xP CGBs. When ordered Ga xIn 1-xP is graded from the GaAs lattice constant to InP, the order parametermore » ..eta.. decreases as x decreases, and dislocation glide switches from one set of glide planes to the other. This glide plane switch (GPS) is accompanied by the nucleation of dislocations on the new glide plane, which typically leads to increased TDD. We develop control of the GPS position within a Ga xIn 1-xP CGB through manipulation of deposition temperature, surfactant concentration, and strain-grading rate. We demonstrate a two-stage Ga xIn 1-xP CGB from GaAs to InP with sufficiently low TDD for high performance devices, such as the 4-junction inverted metamorphic multi-junction solar cell, achieved through careful control the GPS position. Here, experimental results are analyzed within the context of a model that considers the force balance on dislocations on the two competing glide planes as a function of the degree of ordering.« less

Performance and Durability of Thin Film Thermocouple Array on a Porous Electrode.

PubMed

Guk, Erdogan; Ranaweera, Manoj; Venkatesan, Vijay; Kim, Jung-Sik

2016-08-23

Management of solid oxide fuel cell (SOFC) thermal gradients is vital to limit thermal expansion mismatch and thermal stress. However, owing to harsh operation conditions of SOFCs and limited available space in stack configuration, the number of techniques available to obtain temperature distribution from the cell surface is limited. The authors previously developed and studied a thermocouple array pattern to detect surface temperature distribution on an SOFC in open circuit conditions. In this study, the performance in terms of mechanical durability and oxidation state of the thin film thermoelements of the thermocouple array on the porous SOFC cathode is investigated. A thin-film multi-junction thermocouple array was sputter deposited using a magnetron sputter coater. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) characterisation techniques were carried out to understand characteristics of the thin film before and after temperature (20 °C-800 °C) measurement. Temperature readings from the sensor agreed well with the closely placed commercial thermocouple during heating segments. However, a sensor failure occurred at around 350 °C during the cooling segment. The SEM and XPS tests revealed cracks on the thin film thermoelements and oxidation to the film thickness direction.

Performance and Durability of Thin Film Thermocouple Array on a Porous Electrode

PubMed Central

Guk, Erdogan; Ranaweera, Manoj; Venkatesan, Vijay; Kim, Jung-Sik

2016-01-01

Management of solid oxide fuel cell (SOFC) thermal gradients is vital to limit thermal expansion mismatch and thermal stress. However, owing to harsh operation conditions of SOFCs and limited available space in stack configuration, the number of techniques available to obtain temperature distribution from the cell surface is limited. The authors previously developed and studied a thermocouple array pattern to detect surface temperature distribution on an SOFC in open circuit conditions. In this study, the performance in terms of mechanical durability and oxidation state of the thin film thermoelements of the thermocouple array on the porous SOFC cathode is investigated. A thin-film multi-junction thermocouple array was sputter deposited using a magnetron sputter coater. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) characterisation techniques were carried out to understand characteristics of the thin film before and after temperature (20 °C–800 °C) measurement. Temperature readings from the sensor agreed well with the closely placed commercial thermocouple during heating segments. However, a sensor failure occurred at around 350 °C during the cooling segment. The SEM and XPS tests revealed cracks on the thin film thermoelements and oxidation to the film thickness direction. PMID:27563893

Helios: Understanding Solar Evolution Through Text Analytics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Randazzese, Lucien

This proof-of-concept project focused on developing, testing, and validating a range of bibliometric, text analytic, and machine-learning based methods to explore the evolution of three photovoltaic (PV) technologies: Cadmium Telluride (CdTe), Dye-Sensitized solar cells (DSSC), and Multi-junction solar cells. The analytical approach to the work was inspired by previous work by the same team to measure and predict the scientific prominence of terms and entities within specific research domains. The goal was to create tools that could assist domain-knowledgeable analysts in investigating the history and path of technological developments in general, with a focus on analyzing step-function changes in performance,more » or “breakthroughs,” in particular. The text-analytics platform developed during this project was dubbed Helios. The project relied on computational methods for analyzing large corpora of technical documents. For this project we ingested technical documents from the following sources into Helios: Thomson Scientific Web of Science (papers), the U.S. Patent & Trademark Office (patents), the U.S. Department of Energy (technical documents), the U.S. National Science Foundation (project funding summaries), and a hand curated set of full-text documents from Thomson Scientific and other sources.« less

Low-Cost High-Efficiency Solar Cells with Wafer Bonding and Plasmonic Technologies

NASA Astrophysics Data System (ADS)

Tanake, Katsuaki

We fabricated a direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs dual-junction cell, to demonstrate a proof-of-principle for the viability of direct wafer bonding for solar cell applications. The bonded interface is a metal-free n+GaAs/n +InP tunnel junction with highly conductive Ohmic contact suitable for solar cell applications overcoming the 4% lattice mismatch. The quantum efficiency spectrum for the bonded cell was quite similar to that for each of unbonded GaAs and InGaAs subcells. The bonded dual-junction cell open-circuit voltage was equal to the sum of the unbonded subcell open-circuit voltages, which indicates that the bonding process does not degrade the cell material quality since any generated crystal defects that act as recombination centers would reduce the open-circuit voltage. Also, the bonded interface has no significant carrier recombination rate to reduce the open circuit voltage. Engineered substrates consisting of thin films of InP on Si handle substrates (InP/Si substrates or epitaxial templates) have the potential to significantly reduce the cost and weight of compound semiconductor solar cells relative to those fabricated on bulk InP substrates. InGaAs solar cells on InP have superior performance to Ge cells at photon energies greater than 0.7 eV and the current record efficiency cell for 1 sun illumination was achieved using an InGaP/GaAs/InGaAs triple junction cell design with an InGaAs bottom cell. Thermophotovoltaic (TPV) cells from the InGaAsP-family of III-V materials grown epitaxially on InP substrates would also benefit from such an InP/Si substrate. Additionally, a proposed four-junction solar cell fabricated by joining subcells of InGaAs and InGaAsP grown on InP with subcells of GaAs and AlInGaP grown on GaAs through a wafer-bonded interconnect would enable the independent selection of the subcell band gaps from well developed materials grown on lattice matched substrates. Substitution of InP/Si substrates for bulk InP in the fabrication of such a four-junction solar cell could significantly reduce the substrate cost since the current prices for commercial InP substrates are much higher than those for Si substrates by two orders of magnitude. Direct heteroepitaxial growth of InP thin films on Si substrates has not produced the low dislocation-density high quality layers required for active InGaAs/InP in optoelectronic devices due to the ˜8% lattice mismatch between InP and Si. We successfully fabricated InP/Si substrates by He implantation of InP prior to bonding to a thermally oxidized Si substrate and annealing to exfoliate an InP thin film. The thickness of the exfoliated InP films was only 900 nm, which means hundreds of the InP/Si substrates could be prepared from a single InP wafer in principle. The photovoltaic current-voltage characteristics of the In0.53Ga0.47As cells fabricated on the wafer-bonded InP/Si substrates were comparable to those synthesized on commercially available epi-ready InP substrates, and had a ˜20% higher short-circuit current which we attribute to the high reflectivity of the InP/SiO2/Si bonding interface. This work provides an initial demonstration of wafer-bonded InP/Si substrates as an alternative to bulk InP substrates for solar cell applications. We have observed photocurrent enhancements up to 260% at 900 nm for a GaAs cell with a dense array of Ag nanoparticles with 150 nm diameter and 20 nm height deposited through porous alumina membranes by thermal evaporation on top of the cell, relative to reference GaAs cells with no metal nanoparticle array. This dramatic photocurrent enhancement is attributed to the effect of metal nanoparticles to scatter the incident light into photovoltaic layers with a wide range of angles to increase the optical path length in the absorber layer. GaAs solar cells with metallic structures at the bottom of the photovoltaic active layers, not only at the top, using semiconductor-metal direct bonding have been fabricated. These metallic back structures could incouple the incident light into surface plasmon mode propagating at the semiconductor/metal interface to increase the optical path, as well as simply act as back reflector, and we have observed significantly increased short-circuit current relative to reference cells without these metal components. (Abstract shortened by UMI.)

High-efficiency cavity-dumped micro-chip Yb:YAG laser

NASA Astrophysics Data System (ADS)

Nishio, M.; Maruko, A.; Inoue, M.; Takama, M.; Matsubara, S.; Okunishi, H.; Kato, K.; Kyomoto, K.; Yoshida, T.; Shimabayashi, K.; Morioka, M.; Inayoshi, S.; Yamagata, S.; Kawato, S.

2014-09-01

High-efficiency cavity-dumped ytterbium-doped yttrium aluminum garnet (Yb:YAG) laser was developed. Although the high quantum efficiency of ytterbium-doped laser materials is appropriate for high-efficiency laser oscillation, the efficiency is decreased by their quasi-three/four laser natures. High gain operation by high intensity pumping is suitable for high efficiency oscillation on the quasi-three/four lasers without extremely low temperature cooling. In our group, highest efficiency oscillations for continuous wave, nanosecond to picosecond pulse lasers were achieved at room temperature by the high gain operation in which pump intensities were beyond 100 kW/cm2.

Highly Efficient Nondoped Green Organic Light-Emitting Diodes with Combination of High Photoluminescence and High Exciton Utilization.

PubMed

Wang, Chu; Li, Xianglong; Pan, Yuyu; Zhang, Shitong; Yao, Liang; Bai, Qing; Li, Weijun; Lu, Ping; Yang, Bing; Su, Shijian; Ma, Yuguang

2016-02-10

Photoluminescence (PL) efficiency and exciton utilization efficiency are two key parameters to harvest high-efficiency electroluminescence (EL) in organic light-emitting diodes (OLEDs). But it is not easy to simultaneously combine these two characteristics (high PL efficiency and high exciton utilization) into a fluorescent material. In this work, an efficient combination was achieved through two concepts of hybridized local and charge-transfer (CT) state (HLCT) and "hot exciton", in which the former is responsible for high PL efficiency while the latter contributes to high exciton utilization. On the basis of a tiny chemical modification in TPA-BZP, a green-light donor-acceptor molecule, we designed and synthesized CzP-BZP with this efficeient combination of high PL efficiency of η(PL) = 75% in the solid state and maximal exciton utilization efficiency up to 48% (especially, the internal quantum efficiency of η(IQE) = 35% substantially exceed 25% of spin statistics limit) in OLED. The nondoped OLED of CzP-BZP exhibited an excellent performance: a green emission with a CIE coordinate of (0.34, 0.60), a maximum current efficiency of 23.99 cd A(-1), and a maximum external quantum efficiency (EQE, η(EQE)) of 6.95%. This combined HLCT state and "hot exciton" strategy should be a practical way to design next-generation, low-cost, high-efficiency fluorescent OLED materials.

Effects of Mev Si Ions and Thermal Annealing on Thermoelectric and Optical Properties of SiO2/SiO2+Ge Multi-nanolayer thin Films

NASA Astrophysics Data System (ADS)

Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.

Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.

Photodiode design study. Final report, May--December 1977

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lamorte, M.F.

1977-12-01

The purpose of this work was to apply the analytical method developed for single junction and multijunction solar cells, Contract No. F33615-76-C-1283, to photodiodes and avalanche photodiodes. It was anticipated that this analytical method will advance the state-of-the-art because of the following: (1) the analysis considers the total photodetector multilayer structure rather than just the depleted region; (2) a model of the complete band structure is analyzed; (3) application of the integral form of the continuity equation is used; (4) structures that reduce dark current and/or increase the ratio of photocurrent to dark current are obtained; and (5) structures thatmore » increase spectral response in the depleted region and reduce response in other regions of the diode are obtained. The integral form of the continuity equation developed for solar cells is the steady-state or time-independent form. The contract specified that the time-independent equation would only be employed to determine applicability to photodetectors. The GaAsSb photodiode under development at Rockwell International, Thousand Oaks, California was used to determine the applicability to photodetectors. The diode structure is composed of four layers grown on a substrate. The analysis presents calculations of spectral response. This parameter is used in this study to optimize the structure.« less

The growth of low band-gap InAs on (111)B GaAs substrates

NASA Technical Reports Server (NTRS)

Welser, R. E.; Guido, L. J.

1995-01-01

The use of low band-gap materials is of interest for a number of photovoltaic and optoelectronic applications, such as bottom cells of optimized multijunction solar cell designs, long wavelength light sources, detectors, and thermophotovoltaics. However, low band-gap materials are generally mismatched with respect to lattice constant, thermal expansion coefficient, and chemical bonding to the most appropriate commercially available substrates (Si, Ge, and GaAs). For the specific case of III-V semiconductor heteroepitaxy, one must contend with the strain induced by both lattice constant mismatch at the growth temperature and differences in the rates of mechanical deformation during the cool down cycle. Several experimental techniques have been developed to minimize the impact of these phenomena (i.e., compositional grading, strained layer superlattices, and high-temperature annealing). However, in highly strained systems such as InAs-on-GaAs, three-dimensional island formation and large defect densities (greater than or equal to 10(exp 8)/ cm(exp -2)) tend to limit their applicability. In these particular cases, the surface morphology and defect density must be controlled during the initial stages of nucleation and growth. At the last SPRAT conference, we reported on a study of the evolution of InAs islands on (100) and (111)B GaAs substrates. Growth on the (111)B orientation exhibits a number of advantageous properties as compared to the (100) during these early stages of strained-layer epitaxy. In accordance with a developing model of nucleation and growth, we have deposited thin (60 A - 2500 A), fully relaxed InAs films on (111)B GaAs substrates. Although thicker InAs films are subject to the formation of twin defects common to epitaxy on the (111)B orientation, appropriate control of the growth parameters can greatly minimize their density. Using this knowledge base, InAs films up to 2 microns in thickness with improved morphology and structural quality have been grown on (111)B GaAs substrates, thereby enabling the measurement of electronic and optical properties.

High Performance Organic Materials and Devices

DTIC Science & Technology

2006-03-31

on this material exhibited external quantum efficiency of 2.48% and electroluminescence efficiency as high as 3.33 cd/A. 15. SUBJECT TERMS 16...International de L’Eclairage coordinate at (0.164, 0.188). The external quantum efficiency of 2.48% and electroluminescence efficiency as high as 3.33 cd...more than 90% absorption in active layer, and highly balanced carrier transport. 4 5. High efficient blue- electroluminescence device shows maximum

Light trapping in thin film solar cells using photonic engineering device concepts

NASA Astrophysics Data System (ADS)

Mutitu, James Gichuhi

In this era of uncertainty concerning future energy solutions, strong reservations have arisen over the continued use and pursuit of fossil fuels and other conventional sources of energy. Moreover, there is currently a strong and global push for the implementation of stringent measures, in order to reduce the amount of green house gases emitted by every nation. As a consequence, there has emerged a sudden and frantic rush for new renewable energy solutions. In this world of renewable energy technologies is where we find photovoltaic (PV) technology today. However, as is, there are still many issues that need to be addressed before solar energy technologies become economically viable and available to all people, in every part of the world. This renewed interest in the development of solar electricity, has led to the advancement of new avenues that address the issues of cost and efficiency associated with PV. To this end, one of the prominent approaches being explored is thin film solar cell (TFSC) technology, which offers prospects of lower material costs and enables larger units of manufacture than conventional wafer based technology. However, TFSC technologies suffer from one major problem; they have lower efficiencies than conventional wafer based solar cell technologies. This lesser efficiency is based on a number of reasons, one of which is that with less material, there is less volume for the absorption of incident photons. This shortcoming leads to the need for optical light trapping; which is concerned with admitting the maximum amount of light into the solar cell and keeping the light within the structure for as long as possible. In this thesis, I present the fundamental scientific ideas, practice and methodology behind the application of photonic engineering device concepts to increase the light trapping capacity of thin film solar cells. In the introductory chapters, I develop the basic ideas behind light trapping in a sequential manner, where the effects of the inclusion of various structures on the front and back surfaces of solar cells are examined. This framework is then adapted as a basis for the development of more advanced topics, such as the inclusion of micro and nano scale surface textures, diffraction gratings and photonic bandgap structures. Analyses of the effects of these light trapping structures is undertaken using performance metrics, such as the short circuit current characteristics and a band-edge enhancement factor, which all serve to quantitatively demonstrate the effects of the optical enhancements. I begin this thesis with an investigation of one dimensional photonic crystals, which are used as selective light filters between vertically stacked tandem multi-junction solar cells. These ideas are then further developed for single junction stand alone thin film solar cells, where the optical enhancement is shown to be very significant. A further investigation on the application of engineered photonic crystal materials as angular selective light filters is then presented; these filters are shown to overcome the physical limitations of light trapping that are imposed by the optical properties of materials; specifically limitations associated with total internal reflection. In the next part of this thesis, I present a fundamental redesign approach to multiple period distributed Bragg reflectors (DBR's) and their applications to solar cell light trapping. As it turns out, multiple period DBR's, which are required for high back surface reflectance - which is especially necessary in thin film solar cells - present formidable challenges in terms of cost and complexity when considered for high volume manufacturing. To this end, I show that when a single period DBR is combined with a phase matching and metallic layer, the combined structure can achieve high back surface reflectance that is comparable to that of a DBR structure with many more layers. This new structure reduces the back reflector complexity and is hence, amenable to large scale fabrication processes. In the latter sections of this thesis, I present a host of fabrication techniques that are used to realize micro and nano scale light trapping features. These techniques range from standard silicon wet etching processes, to customized and elaborate deep ultra-violet lithography, which is combined with inductively coupled plasma etching and used in order to realize sub-micron diffraction gratings. These textures are then applied to substrates on which thin film amorphous silicon solar cell structures are deposited, subsequent analyses on the effectiveness of these texturing processes is performed. Finally, this thesis concludes with the presentation of a blueprint for future explorations and applications of the developed light trapping techniques, to other thin film solar cell materials and technologies.

Prediction and design of efficient exciplex emitters for high-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes.

PubMed

Liu, Xiao-Ke; Chen, Zhan; Zheng, Cai-Jun; Liu, Chuan-Lin; Lee, Chun-Sing; Li, Fan; Ou, Xue-Mei; Zhang, Xiao-Hong

2015-04-08

High-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes based on exciplex emitters are demonstrated. The best device, based on a TAPC:DPTPCz emitter, shows a high external quantum efficiency of 15.4%. Strategies for predicting and designing efficient exciplex emitters are also provided. This approach allow prediction and design of efficient exciplex emitters for achieving high-efficiency organic light-emitting diodes, for future use in displays and lighting applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-efficiency, broad band, high-damage threshold high-index gratings for femtosecond pulse compression.

PubMed

Canova, Frederico; Clady, Raphael; Chambaret, Jean-Paul; Flury, Manuel; Tonchev, Svtelen; Fechner, Renate; Parriaux, Olivier

2007-11-12

High efficiency, broad-band TE-polarization diffraction over a wavelength range centered at 800 nm is obtained by high index gratings placed on a non-corrugated mirror. More than 96% efficiency wide band top-hat diffraction efficiency spectra, as well as more than 1 J/cm(2) damage threshold under 50 fs pulses are demonstrated experimentally. This opens the way to high-efficiency Chirped Pulse Amplification for high average power laser machining by means of all-dielectric structures as well as for ultra-short high energy pulses by means of metal-dielectric structures.

Progress of OLED devices with high efficiency at high luminance

NASA Astrophysics Data System (ADS)

Nguyen, Carmen; Ingram, Grayson; Lu, Zhenghong

2014-03-01

Organic light emitting diodes (OLEDs) have progressed significantly over the last two decades. For years, OLEDs have been promoted as the next generation technology for flat panel displays and solid-state lighting due to their potential for high energy efficiency and dynamic range of colors. Although high efficiency can readily be obtained at low brightness levels, a significant decline at high brightness is commonly observed. In this report, we will review various strategies for achieving highly efficient phosphorescent OLED devices at high luminance. Specifically, we will provide details regarding the performance and general working principles behind each strategy. We will conclude by looking at how some of these strategies can be combined to produce high efficiency white OLEDs at high brightness.

New silicon cell design concepts for 20 percent AMI efficiency

NASA Technical Reports Server (NTRS)

Wolf, M.

1982-01-01

The basic design principles for obtaining high efficiency in silicon solar cells are reviewed. They critically involve very long minority carrier lifetimes, not so much to attain high collection efficiency, but primarily for increased output voltages. Minority carrier lifetime, however, is sensitive to radiation damage, and particularly in low resistivity silicon, on which the high efficiency design is based. Radiation resistant space cells will therefore have to follow differing design principles than high efficiency terrestrial cells.

High efficiency, long life terrestrial solar panel

NASA Technical Reports Server (NTRS)

Chao, T.; Khemthong, S.; Ling, R.; Olah, S.

1977-01-01

The design of a high efficiency, long life terrestrial module was completed. It utilized 256 rectangular, high efficiency solar cells to achieve high packing density and electrical output. Tooling for the fabrication of solar cells was in house and evaluation of the cell performance was begun. Based on the power output analysis, the goal of a 13% efficiency module was achievable.

High efficiency quantum cascade laser frequency comb.

PubMed

Lu, Quanyong; Wu, Donghai; Slivken, Steven; Razeghi, Manijeh

2017-03-06

An efficient mid-infrared frequency comb source is of great interest to high speed, high resolution spectroscopy and metrology. Here we demonstrate a mid-IR quantum cascade laser frequency comb with a high power output and narrow beatnote linewidth at room temperature. The active region was designed with a strong-coupling between the injector and the upper lasing level for high internal quantum efficiency and a broadband gain. The group velocity dispersion was engineered for efficient, broadband mode-locking via four wave mixing. The comb device exhibits a narrow intermode beatnote linewidth of 50.5 Hz and a maximum wall-plug efficiency of 6.5% covering a spectral coverage of 110 cm -1 at λ ~ 8 μm. The efficiency is improved by a factor of 6 compared with previous demonstrations. The high power efficiency and narrow beatnote linewidth will greatly expand the applications of quantum cascade laser frequency combs including high-precision remote sensing and spectroscopy.

High efficiency quantum cascade laser frequency comb

PubMed Central

Lu, Quanyong; Wu, Donghai; Slivken, Steven; Razeghi, Manijeh

2017-01-01

An efficient mid-infrared frequency comb source is of great interest to high speed, high resolution spectroscopy and metrology. Here we demonstrate a mid-IR quantum cascade laser frequency comb with a high power output and narrow beatnote linewidth at room temperature. The active region was designed with a strong-coupling between the injector and the upper lasing level for high internal quantum efficiency and a broadband gain. The group velocity dispersion was engineered for efficient, broadband mode-locking via four wave mixing. The comb device exhibits a narrow intermode beatnote linewidth of 50.5 Hz and a maximum wall-plug efficiency of 6.5% covering a spectral coverage of 110 cm−1 at λ ~ 8 μm. The efficiency is improved by a factor of 6 compared with previous demonstrations. The high power efficiency and narrow beatnote linewidth will greatly expand the applications of quantum cascade laser frequency combs including high-precision remote sensing and spectroscopy. PMID:28262834

Proceedings of the Flat-plate Solar Array Project Research Forum on High-efficiency Crystalline Silicon Solar Cells

NASA Technical Reports Server (NTRS)

Kachare, R.

1985-01-01

The high-efficiency crystalline silicon solar cells research forum addressed high-efficiency concepts, surface-interface effects, bulk effects, modeling and device processing. The topics were arranged into six interactive sessions, which focused on the state-of-the-art of device structures, identification of barriers to achieve high-efficiency cells and potential ways to overcome these barriers.

Extremely Low Roll-Off and High Efficiency Achieved by Strategic Exciton Management in Organic Light-Emitting Diodes with Simple Ultrathin Emitting Layer Structure.

PubMed

Zhang, Tianmu; Shi, Changsheng; Zhao, Chenyang; Wu, Zhongbin; Chen, Jiangshan; Xie, Zhiyuan; Ma, Dongge

2018-03-07

Phosphorescent organic light-emitting diodes (OLEDs) possess the property of high efficiency but have serious efficiency roll-off at high luminance. Herein, we manufactured high-efficiency phosphorescent OLEDs with extremely low roll-off by effectively locating the ultrathin emitting layer (UEML) away from the high-concentration exciton formation region. The strategic exciton management in this simple UEML architecture greatly suppressed the exciton annihilation due to the expansion of the exciton diffusion region; thus, this efficiency roll-off at high luminance was significantly improved. The resulting green phosphorescent OLEDs exhibited the maximum external quantum efficiency of 25.5%, current efficiency of 98.0 cd A -1 , and power efficiency of 85.4 lm W -1 and still had 25.1%, 94.9 cd A -1 , and 55.5 lm W -1 at 5000 cd m -2 luminance, and retained 24.3%, 92.7 cd A -1 , and 49.3 lm W -1 at 10 000 cd m -2 luminance, respectively. Compared with the usual structures, the improvement demonstrated in this work displays potential value in applications.

Pyrimidine-based twisted donor-acceptor delayed fluorescence molecules: a new universal platform for highly efficient blue electroluminescence.

PubMed

Park, In Seob; Komiyama, Hideaki; Yasuda, Takuma

2017-02-01

Deep-blue emitters that can harvest both singlet and triplet excited states to give high electron-to-photon conversion efficiencies are highly desired for applications in full-color displays and white lighting devices based on organic light-emitting diodes (OLEDs). Thermally activated delayed fluorescence (TADF) molecules based on highly twisted donor-acceptor (D-A) configurations are promising emitting dopants for the construction of efficient deep-blue OLEDs. In this study, a simple and versatile D-A system combining acridan-based donors and pyrimidine-based acceptors has been developed as a new platform for high-efficiency deep-blue TADF emitters. The designed pre-twisted acridan-pyrimidine D-A molecules exhibit small singlet-triplet energy splitting and high photoluminescence quantum yields, functioning as efficient deep-blue TADF emitters. The OLEDs utilizing these TADF emitters display bright blue electroluminescence with external quantum efficiencies of up to 20.4%, maximum current efficiencies of 41.7 cd A -1 , maximum power efficiencies of 37.2 lm W -1 , and color coordinates of (0.16, 0.23). The design strategy featuring such acridan-pyrimidine D-A motifs can offer great prospects for further developing high-performance deep-blue TADF emitters and TADF-OLEDs.

Simulation of the real efficiencies of high-efficiency silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sachenko, A. V., E-mail: sach@isp.kiev.ua; Skrebtii, A. I.; Korkishko, R. M.

The temperature dependences of the efficiency η of high-efficiency solar cells based on silicon are calculated. It is shown that the temperature coefficient of decreasing η with increasing temperature decreases as the surface recombination rate decreases. The photoconversion efficiency of high-efficiency silicon-based solar cells operating under natural (field) conditions is simulated. Their operating temperature is determined self-consistently by simultaneously solving the photocurrent, photovoltage, and energy-balance equations. Radiative and convective cooling mechanisms are taken into account. It is shown that the operating temperature of solar cells is higher than the ambient temperature even at very high convection coefficients (~300 W/m{sup 2}more » K). Accordingly, the photoconversion efficiency in this case is lower than when the temperature of the solar cells is equal to the ambient temperature. The calculated dependences for the open-circuit voltage and the photoconversion efficiency of high-quality silicon solar cells under concentrated illumination are discussed taking into account the actual temperature of the solar cells.« less

Basic concepts for the design of high-efficiency single-junction and multibandgap solar cells

NASA Technical Reports Server (NTRS)

Fan, J. C. C.

1985-01-01

Concepts for obtaining practical solar-cell modules with one-sun efficiencies up to 30 percent at air mass 1 are now well understood. Such high-efficiency modules utilize multibandgap structures. To achieve module efficiencies significantly above 30 percent, it is necessary to employ different concepts such as spectral compression and broad-band detection. A detailed description of concepts for the design of high-efficiency multibandgap solar cells is given.

Effect of proton-conduction in electrolyte on electric efficiency of multi-stage solid oxide fuel cells

PubMed Central

Matsuzaki, Yoshio; Tachikawa, Yuya; Somekawa, Takaaki; Hatae, Toru; Matsumoto, Hiroshige; Taniguchi, Shunsuke; Sasaki, Kazunari

2015-01-01

Solid oxide fuel cells (SOFCs) are promising electrochemical devices that enable the highest fuel-to-electricity conversion efficiencies under high operating temperatures. The concept of multi-stage electrochemical oxidation using SOFCs has been proposed and studied over the past several decades for further improving the electrical efficiency. However, the improvement is limited by fuel dilution downstream of the fuel flow. Therefore, evolved technologies are required to achieve considerably higher electrical efficiencies. Here we present an innovative concept for a critically-high fuel-to-electricity conversion efficiency of up to 85% based on the lower heating value (LHV), in which a high-temperature multi-stage electrochemical oxidation is combined with a proton-conducting solid electrolyte. Switching a solid electrolyte material from a conventional oxide-ion conducting material to a proton-conducting material under the high-temperature multi-stage electrochemical oxidation mechanism has proven to be highly advantageous for the electrical efficiency. The DC efficiency of 85% (LHV) corresponds to a net AC efficiency of approximately 76% (LHV), where the net AC efficiency refers to the transmission-end AC efficiency. This evolved concept will yield a considerably higher efficiency with a much smaller generation capacity than the state-of-the-art several tens-of-MW-class most advanced combined cycle (MACC). PMID:26218470

Effect of proton-conduction in electrolyte on electric efficiency of multi-stage solid oxide fuel cells.

PubMed

Matsuzaki, Yoshio; Tachikawa, Yuya; Somekawa, Takaaki; Hatae, Toru; Matsumoto, Hiroshige; Taniguchi, Shunsuke; Sasaki, Kazunari

2015-07-28

Solid oxide fuel cells (SOFCs) are promising electrochemical devices that enable the highest fuel-to-electricity conversion efficiencies under high operating temperatures. The concept of multi-stage electrochemical oxidation using SOFCs has been proposed and studied over the past several decades for further improving the electrical efficiency. However, the improvement is limited by fuel dilution downstream of the fuel flow. Therefore, evolved technologies are required to achieve considerably higher electrical efficiencies. Here we present an innovative concept for a critically-high fuel-to-electricity conversion efficiency of up to 85% based on the lower heating value (LHV), in which a high-temperature multi-stage electrochemical oxidation is combined with a proton-conducting solid electrolyte. Switching a solid electrolyte material from a conventional oxide-ion conducting material to a proton-conducting material under the high-temperature multi-stage electrochemical oxidation mechanism has proven to be highly advantageous for the electrical efficiency. The DC efficiency of 85% (LHV) corresponds to a net AC efficiency of approximately 76% (LHV), where the net AC efficiency refers to the transmission-end AC efficiency. This evolved concept will yield a considerably higher efficiency with a much smaller generation capacity than the state-of-the-art several tens-of-MW-class most advanced combined cycle (MACC).

High-Efficiency and High-Power Mid-Wave Infrared Cascade Lasers

DTIC Science & Technology

2012-10-01

internal quantum efficiency () and factor (2) is usually called the optical extraction efficiency (). The optical extraction efficiency ... quantum efficiency involves more fundamental parameters corresponding to the microscopic processes of the device operation, nevertheless, it can be...deriving parameters such as the internal quantum efficiency of a QC laser, the entire injector miniband can be treated as a single virtual state

Characteristics of High- and Low-Efficiency Hospitals.

PubMed

Rosko, Michael; Wong, Herbert S; Mutter, Ryan

2017-01-01

We compared performance, operating characteristics, and market environments of low- and high-efficiency hospitals in the 37 states that supplied inpatient data to the Healthcare Cost and Utilization Project from 2006 to 2010. Hospital cost-inefficiency estimates using stochastic frontier analysis were generated. Hospitals were then grouped into the 100 most- and 100 least-efficient hospitals for subsequent analysis. Compared with the least efficient hospitals, high-efficiency hospitals tended to have lower average costs, higher labor productivity, and higher profit margins. The most efficient hospitals tended to be nonteaching, investor-owned, and members of multihospital systems. Hospitals in the high-efficiency group were located in areas with lower health maintenance organization penetration and less competition, and they had a higher share of Medicaid and Medicare admissions. Results of the analysis suggest there are opportunities for public policies to support improved efficiency in the hospital sector.

Radiation Hardened, Modulator ASIC for High Data Rate Communications

NASA Technical Reports Server (NTRS)

McCallister, Ron; Putnam, Robert; Andro, Monty; Fujikawa, Gene

2000-01-01

Satellite-based telecommunication services are challenged by the need to generate down-link power levels adequate to support high quality (BER approx. equals 10(exp 12)) links required for modem broadband data services. Bandwidth-efficient Nyquist signaling, using low values of excess bandwidth (alpha), can exhibit large peak-to-average-power ratio (PAPR) values. High PAPR values necessitate high-power amplifier (HPA) backoff greater than the PAPR, resulting in unacceptably low HPA efficiency. Given the high cost of on-board prime power, this inefficiency represents both an economical burden, and a constraint on the rates and quality of data services supportable from satellite platforms. Constant-envelope signals offer improved power-efficiency, but only by imposing a severe bandwidth-efficiency penalty. This paper describes a radiation- hardened modulator which can improve satellite-based broadband data services by combining the bandwidth-efficiency of low-alpha Nyquist signals with high power-efficiency (negligible HPA backoff).

Loss mechanisms in high-efficiency solar cells: Study of material properties and high-efficiency solar-cell performance on material composition: Project tasks

NASA Technical Reports Server (NTRS)

Sah, C. T.

1985-01-01

Loss mechanisms in high-efficiency solar cells were discussed. Fundamental limitations and practical solutions were stressed. Present cell efficiency is limited by many recombination sites: emitter, base, contacts, and oxide/silicon interface. Use of polysilicon passivation was suggested. After reduction of these losses, a 25% efficient cell could be built. A floating emitter cell design was shown that had the potential of low recombination losses.

Simple Retrofit High-Efficiency Natural Gas Water Heater Field Test

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schoenbauer, Ben

High-performance water heaters are typically more time consuming and costly to install in retrofit applications, making high performance water heaters difficult to justify economically. However, recent advancements in high performance water heaters have targeted the retrofit market, simplifying installations and reducing costs. Four high efficiency natural gas water heaters designed specifically for retrofit applications were installed in single-family homes along with detailed monitoring systems to characterize their savings potential, their installed efficiencies, and their ability to meet household demands. The water heaters tested for this project were designed to improve the cost-effectiveness and increase market penetration of high efficiency watermore » heaters in the residential retrofit market. The retrofit high efficiency water heaters achieved their goal of reducing costs, maintaining savings potential and installed efficiency of other high efficiency water heaters, and meeting the necessary capacity in order to improve cost-effectiveness. However, the improvements were not sufficient to achieve simple paybacks of less than ten years for the incremental cost compared to a minimum efficiency heater. Significant changes would be necessary to reduce the simple payback to six years or less. Annual energy savings in the range of $200 would also reduce paybacks to less than six years. These energy savings would require either significantly higher fuel costs (greater than $1.50 per therm) or very high usage (around 120 gallons per day). For current incremental costs, the water heater efficiency would need to be similar to that of a heat pump water heater to deliver a six year payback.« less

The connotation interpretation of high-efficiency agriculture under the perspective of a combined agriculture with tourism

NASA Astrophysics Data System (ADS)

Zhou, Jie; Zhang, Feng-tai; Gai, Yuan-jin; Deng, Bao-kun; Shao, Ji-xin; An, You-zhi

2017-08-01

Through literature review, the article points out that the existing of the high-efficiency agriculture definition is limited to results oriented thinking, apparently lack of process oriented thinking. Combined with the connotation of fusion agriculture and tourism, respectively from the time and space utilization efficiency, cash cost, elements of input and output form, etc, gives high-efficiency agriculture a new connotation. Under the perspective of a combined agriculture with tourism, efficient use of time and space, low realized cost, less costs and output form of agriculture, this is highly effective agriculture.

The moderating effect of leadership on the relationship between personality and performance.

PubMed

Yeh, Shu-Chuan Jennifer; Yuan, Kuo-Shu; Chen, Shih-Hua Sarah; Lo, Ying-Ying; Chou, Hsueh-Chih; Huang, Shan; Chiu, Herng-Chia; Wan, Thomas T H

2016-10-01

To examine how personality and leadership influence efficiency in the nursing service environment. Leadership and personality contribute to the success and failure of a unit. However, how they interact to influence performance is still understudied. We used matched pairs sample design to survey 135 head nurses and 1353 registered nurses on validated instruments of demographic characteristics, leadership styles and personality during June and July of 2014. Efficiency was calculated using Data Envelopment Analysis. Tobit regression was used for analysis. High conscientiousness and low neuroticism were significantly associated with higher efficiency. Particularly, under the initiating structure leadership style, high conscientiousness, high extraversion, high agreeableness, high openness and low neuroticism were related to higher efficiency. Openness would improve efficiency under a low consideration leadership style. Most personality traits were related to higher efficiency under the initiating leadership style. Only openness would improve leaders' efficiency under a high initiating structure and a low consideration leadership style. Considering personality as one factor of selecting head nurses, selecting the right person can improve the fit between individuals and organisations, which in turn, improves job performance. Training head nurses to develop better leadership styles in nurses is another way to enhance efficiency. © 2016 John Wiley & Sons Ltd.

High efficiency endocrine operation protocol: From design to implementation.

PubMed

Mascarella, Marco A; Lahrichi, Nadia; Cloutier, Fabienne; Kleiman, Simcha; Payne, Richard J; Rosenberg, Lawrence

2016-10-01

We developed a high efficiency endocrine operative protocol based on a mathematical programming approach, process reengineering, and value-stream mapping to increase the number of operations completed per day without increasing operating room time at a tertiary-care, academic center. Using this protocol, a case-control study of 72 patients undergoing endocrine operation during high efficiency days were age, sex, and procedure-matched to 72 patients undergoing operation during standard days. The demographic profile, operative times, and perioperative complications were noted. The average number of cases per 8-hour workday in the high efficiency and standard operating rooms were 7 and 5, respectively. Mean procedure times in both groups were similar. The turnaround time (mean ± standard deviation) in the high efficiency group was 8.5 (±2.7) minutes as compared with 15.4 (±4.9) minutes in the standard group (P < .001). Transient postoperative hypocalcemia was 6.9% (5/72) and 8.3% (6/72) for the high efficiency and standard groups, respectively (P = .99). In this study, patients undergoing high efficiency endocrine operation had similar procedure times and perioperative complications compared with the standard group. The proposed high efficiency protocol seems to better utilize operative time and decrease the backlog of patients waiting for endocrine operation in a country with a universal national health care program. Copyright © 2016 Elsevier Inc. All rights reserved.

Overview of CMC Development Activities in NASA's Ultra-Efficient Engine Technology (UEET) Program

NASA Technical Reports Server (NTRS)

Brewer, Dave

2001-01-01

The primary objective of the UEET (Ultra-Efficient Engine Technology) Program is to address two of the most critical propulsion issues: performance/efficiency and reduced emissions. High performance, low emissions engine systems will lead to significant improvement in local air quality, minimum impact on ozone depletion and level to an overall reduction in aviation contribution to global warming. The Materials and Structures for High Performance project will develop and demonstrate advanced high temperature materials to enable high-performance, high efficiency, and environmentally compatible propulsion systems.

A Simulated Annealing Algorithm for the Optimization of Multistage Depressed Collector Efficiency

NASA Technical Reports Server (NTRS)

Vaden, Karl R.; Wilson, Jeffrey D.; Bulson, Brian A.

2002-01-01

The microwave traveling wave tube amplifier (TWTA) is widely used as a high-power transmitting source for space and airborne communications. One critical factor in designing a TWTA is the overall efficiency. However, overall efficiency is highly dependent upon collector efficiency; so collector design is critical to the performance of a TWTA. Therefore, NASA Glenn Research Center has developed an optimization algorithm based on Simulated Annealing to quickly design highly efficient multi-stage depressed collectors (MDC).

Impact of high efficiency vehicles on future fuel tax revenues in Utah.

DOT National Transportation Integrated Search

2015-05-01

The Utah Department of Transportation Research Division has analyzed the potential impact of : high-efficiency motor vehicles on future State of Utah motor fuel tax revenues used to construct and maintain the : highway network. High-efficiency motor ...

Review of status developments of high-efficiency crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Liu, Jingjing; Yao, Yao; Xiao, Shaoqing; Gu, Xiaofeng

2018-03-01

In order to further improve cell efficiency and reduce cost in achieving grid parity, a large number of PV manufacturing companies, universities and research institutes have been devoted to a variety of low-cost and high-efficiency crystalline Si solar cells. In this article, the cell structures, characteristics and efficiency progresses of several types of high-efficiency crystalline Si solar cells that have been in small scale production or are promising in mass production are presented, including passivated emitter rear cell, tunnel oxide passivated contact solar cell, interdigitated back contact cell, heterojunction with intrinsic thin-layer cell, and heterojunction solar cells with interdigitated back contacts. Both the industrialization status and future development trend of high-efficiency crystalline silicon solar cells are also pinpointed.

High-efficiency 20 GHz traveling wave tube development for space communications

NASA Technical Reports Server (NTRS)

Aldana, S. L.; Tamashiro, R. N.

1991-01-01

A 75 watt CW high efficiency helix TWT operating at 20 GHz was developed for satellite communication systems. The purpose was to extend the performance capabilities of helix TWTs by using recent technology developments. The TWT described is a unique design because high overall efficiency is obtained with a low perveance beam. In the past, low perveance designs resulted in low beam efficiencies. However, due to recent breakthoughs in diamond rod technology and in collector electrode materials, high efficiencies can now be achieved with low perveance beams. The advantage of a low perveance beam is a reduction in space charge within the beam which translates to more efficient collector operation. In addition, this design incorporates textured graphite electrodes which further enhance collector operation by suppressing backstreaming secondaries. The diamond supported helix circuit features low RF losses, high interaction impedance, good thermal handling capability and has been designed to compensate for the low perveance beam. One more discussed tube feature is the use of a velocity taper in the output helix that achieves low signal distortion while maintaining high efficiency.

Research on the development efficiency of regional high-end talent in China: A complex network approach

PubMed Central

Zhang, Wenbin

2017-01-01

In this paper, based on the panel data of 31 provinces and cities in China from 1991 to 2016, the regional development efficiency matrix of high-end talent is obtained by DEA method, and the matrix is converted into a continuous change of complex networks through the construction of sliding window. Using a series of continuous changes in the complex network topology statistics, the characteristics of regional high-end talent development efficiency system are analyzed. And the results show that the average development efficiency of high-end talent in the western region is at a low level. After 2005, the national regional high-end talent development efficiency network has both short-range relevance and long-range relevance in the evolution process. The central region plays an important intermediary role in the national regional high-end talent development system. And the western region has high clustering characteristics. With the implementation of the high-end talent policies with regional characteristics by different provinces and cities, the relevance of high-end talent development efficiency in various provinces and cities presents a weakening trend, and the geographical characteristics of high-end talent are more and more obvious. PMID:29272286

High energy efficient solid state laser sources

NASA Technical Reports Server (NTRS)

Byer, Robert L.

1988-01-01

Recent progress in the development of highly efficient coherent optical sources is reviewed. This work focusses on nonlinear frequency conversion of the highly coherent output of the Non-Planar Ring Laser Oscillators developed earlier in the program, and includes high efficiency second harmonic generation and the operation of optical parametric oscillators for wavelength diversity and tunability.

Thin film CdTe based neutron detectors with high thermal neutron efficiency and gamma rejection for security applications

NASA Astrophysics Data System (ADS)

Smith, L.; Murphy, J. W.; Kim, J.; Rozhdestvenskyy, S.; Mejia, I.; Park, H.; Allee, D. R.; Quevedo-Lopez, M.; Gnade, B.

2016-12-01

Solid-state neutron detectors offer an alternative to 3He based detectors, but suffer from limited neutron efficiencies that make their use in security applications impractical. Solid-state neutron detectors based on single crystal silicon also have relatively high gamma-ray efficiencies that lead to false positives. Thin film polycrystalline CdTe based detectors require less complex processing with significantly lower gamma-ray efficiencies. Advanced geometries can also be implemented to achieve high thermal neutron efficiencies competitive with silicon based technology. This study evaluates these strategies by simulation and experimentation and demonstrates an approach to achieve >10% intrinsic efficiency with <10-6 gamma-ray efficiency.

The unlikely high efficiency of a molecular motor based on active motion

NASA Astrophysics Data System (ADS)

Ebeling, W.

2015-07-01

The efficiency of a simple model of a motor converting chemical into mechanical energy is studied analytically. The model motor shows interesting properties corresponding qualitatively to motors investigated in experiments. The efficiency increases with the load and may for low loss reach high values near to 100 percent in a narrow regime of optimal load. It is shown that the optimal load and the maximal efficiency depend by universal power laws on the dimensionless loss parameter. Stochastic effects decrease the stability of motor regimes with high efficiency and make them unlikely. Numerical studies show efficiencies below the theoretical optimum and demonstrate that special ratchet profiles my stabilize efficient regimes.

Highly efficient organic electroluminescent diodes realized by efficient charge balance with optimized electron and hole transport layers

NASA Astrophysics Data System (ADS)

Khan, M. A.; Xu, Wei; Wei, Fuxiang; Bai, Yu; Jiang, X. Y.; Zhang, Z. L.; Zhu, W. Q.

2007-11-01

Highly efficient organic electroluminescent devices (OLEDs) were developed based on 4,7-diphenyl-1, 10-phenanthroline (BPhen) as the electron transport layer (ETL), tris-(8-hydroxyquinoline) aluminum (Alq 3) as the emission layer (EML) and N,Ń-bis-[1-naphthy(-N,Ńdiphenyl-1,1'-biphenyl-4,4'-diamine)] (NPB) as the hole transport layer (HTL). The typical device structure was glass substrate/ ITO/ NPB/ Alq 3/ BPhen/ LiF/ Al. Since BPhen possesses a considerable high electron mobility of 5×10 -4 cm 2 V -1 s -1, devices with BPhen as ETL can realize an extremely high luminous efficiency. By optimizing the thickness of both HTL and ETL, we obtained a highly efficient OLED with a current efficiency of 6.80 cd/A and luminance of 1361 cd/m 2 at a current density of 20 mA/cm 2. This dramatic improvement in the current efficiency has been explained on the principle of charge balance.

Thermodynamic analysis of the efficiency of high-temperature steam electrolysis system for hydrogen production

NASA Astrophysics Data System (ADS)

Mingyi, Liu; Bo, Yu; Jingming, Xu; Jing, Chen

High-temperature steam electrolysis (HTSE), a reversible process of solid oxide fuel cell (SOFC) in principle, is a promising method for highly efficient large-scale hydrogen production. In our study, the overall efficiency of the HTSE system was calculated through electrochemical and thermodynamic analysis. A thermodynamic model in regards to the efficiency of the HTSE system was established and the quantitative effects of three key parameters, electrical efficiency (η el), electrolysis efficiency (η es), and thermal efficiency (η th) on the overall efficiency (η overall) of the HTSE system were investigated. Results showed that the contribution of η el, η es, η th to the overall efficiency were about 70%, 22%, and 8%, respectively. As temperatures increased from 500 °C to 1000 °C, the effect of η el on η overall decreased gradually and the η es effect remained almost constant, while the η th effect increased gradually. The overall efficiency of the high-temperature gas-cooled reactor (HTGR) coupled with the HTSE system under different conditions was also calculated. With the increase of electrical, electrolysis, and thermal efficiency, the overall efficiencies were anticipated to increase from 33% to a maximum of 59% at 1000 °C, which is over two times higher than that of the conventional alkaline water electrolysis.

Phase-I investigation of high-efficiency power amplifiers for 325 and 650 MHz

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raab, Frederick

2018-01-27

This Phase-I SBIR grant investigated techniques for high-efficiency power amplification for DoE particle accelerators such as Project X that operate at 325 and 650 MHz. The recommended system achieves high efficiency, high reliability, and hot-swap capability by integrating class-F power amplifiers, class-S modulators, power combiners, and a digital signal processor. Experimental evaluations demonstrate the production of 120 W per transistor with overall efficiencies from 86 percent at 325 MHz and 80 percent at 650 MHz.

Highly efficient deep-blue organic light emitting diode with a carbazole based fluorescent emitter

NASA Astrophysics Data System (ADS)

Sahoo, Snehasis; Dubey, Deepak Kumar; Singh, Meenu; Joseph, Vellaichamy; Thomas, K. R. Justin; Jou, Jwo-Huei

2018-04-01

High efficiency deep-blue emission is essential to realize energy-saving, high-quality display and lighting applications. We demonstrate here a deep-blue organic light emitting diode using a novel carbazole based fluorescent emitter 7-[4-(diphenylamino)phenyl]-9-(2-ethylhexyl)-9H-carbazole-2-carbonitrile (JV234). The solution processed resultant device shows a maximum luminance above 1,750 cd m-2 and CIE coordinates (0.15,0.06) with a 1.3 lm W-1 power efficiency, 2.0 cd A-1 current efficiency, and 4.1% external quantum efficiency at 100 cd m-2. The resulting deep-blue emission enables a greater than 100% color saturation. The high efficiency may be attributed to the effective host-to-guest energy transfer, suitable device architecture facilitating balanced carrier injection and low doping concentration preventing efficiency roll-off caused by concentration quenching.

Code TESLA for Modeling and Design of High-Power High-Efficiency Klystrons

DTIC Science & Technology

2011-03-01

CODE TESLA FOR MODELING AND DESIGN OF HIGH - POWER HIGH -EFFICIENCY KLYSTRONS * I.A. Chernyavskiy, SAIC, McLean, VA 22102, U.S.A. S.J. Cooke, B...and multiple-beam klystrons as high - power RF sources. These sources are widely used or proposed to be used in accelerators in the future. Comparison...of TESLA modelling results with experimental data for a few multiple-beam klystrons are shown. INTRODUCTION High - power and high -efficiency

Evaluation of a Silicon 90Sr Betavoltaic Power Source.

PubMed

Dixon, Jefferson; Rajan, Aravindh; Bohlemann, Steven; Coso, Dusan; Upadhyaya, Ajay D; Rohatgi, Ajeet; Chu, Steven; Majumdar, Arun; Yee, Shannon

2016-12-01

Betavoltaic energy converters (i.e., β-batteries) are attractive power sources because of their potential for high energy densities (>200 MWh/kg) and long duration continuous discharge (>1 year). However, conversion efficiencies have been historically low (<3%). High efficiency devices can be achieved by matching β-radiation transport length scales with the device physics length scales. In this work, the efficiency of c-Si devices using high-energy (>1 MeV) electrons emitted from 90 Sr as a power source is investigated. We propose a design for a >10% efficient betavoltaic device, which generates 1 W of power. A Varian Clinac iX is used to simulate the high-energy electrons emitted from 90 Sr, and a high efficiency c-Si photovoltaic cell is used as the converter. The measured conversion efficiency is 16%. This relatively high value is attributed to proper length scale matching and the generation of secondary electrons in c-Si by the primary β-particles.

Evaluation of a Silicon 90Sr Betavoltaic Power Source

PubMed Central

Dixon, Jefferson; Rajan, Aravindh; Bohlemann, Steven; Coso, Dusan; Upadhyaya, Ajay D.; Rohatgi, Ajeet; Chu, Steven; Majumdar, Arun; Yee, Shannon

2016-01-01

Betavoltaic energy converters (i.e., β-batteries) are attractive power sources because of their potential for high energy densities (>200 MWh/kg) and long duration continuous discharge (>1 year). However, conversion efficiencies have been historically low (<3%). High efficiency devices can be achieved by matching β-radiation transport length scales with the device physics length scales. In this work, the efficiency of c-Si devices using high-energy (>1 MeV) electrons emitted from 90Sr as a power source is investigated. We propose a design for a >10% efficient betavoltaic device, which generates 1 W of power. A Varian Clinac iX is used to simulate the high-energy electrons emitted from 90Sr, and a high efficiency c-Si photovoltaic cell is used as the converter. The measured conversion efficiency is 16%. This relatively high value is attributed to proper length scale matching and the generation of secondary electrons in c-Si by the primary β-particles. PMID:27905521

Evaluation of a Silicon 90Sr Betavoltaic Power Source

NASA Astrophysics Data System (ADS)

Dixon, Jefferson; Rajan, Aravindh; Bohlemann, Steven; Coso, Dusan; Upadhyaya, Ajay D.; Rohatgi, Ajeet; Chu, Steven; Majumdar, Arun; Yee, Shannon

2016-12-01

Betavoltaic energy converters (i.e., β-batteries) are attractive power sources because of their potential for high energy densities (>200 MWh/kg) and long duration continuous discharge (>1 year). However, conversion efficiencies have been historically low (<3%). High efficiency devices can be achieved by matching β-radiation transport length scales with the device physics length scales. In this work, the efficiency of c-Si devices using high-energy (>1 MeV) electrons emitted from 90Sr as a power source is investigated. We propose a design for a >10% efficient betavoltaic device, which generates 1 W of power. A Varian Clinac iX is used to simulate the high-energy electrons emitted from 90Sr, and a high efficiency c-Si photovoltaic cell is used as the converter. The measured conversion efficiency is 16%. This relatively high value is attributed to proper length scale matching and the generation of secondary electrons in c-Si by the primary β-particles.

Metallic metasurfaces for high efficient polarization conversion control in transmission mode.

PubMed

Li, Tong; Hu, Xiaobin; Chen, Huamin; Zhao, Chen; Xu, Yun; Wei, Xin; Song, Guofeng

2017-10-02

A high efficient broadband polarization converter is an important component in integrated miniaturized optical systems, but its performances is often restricted by the material structures, metallic metasurfaces for polarization control in transmission mode never achieved efficiency above 0.5. Herein, we theoretically demonstrate that metallic metasurfaces constructed by thick cross-shaped particles can realize a high efficient polarization transformation over a broadband. We investigated the resonant properties of designed matesurfaces and found that the interaction between double FP cavity resonances and double bulk magnetic resonances is the main reason to generate a high transmissivity over a broadband. In addition, through using four resonances effect and tuning the anisotropic optical response, we realized a high efficient (> 0.85) quarter-wave plate at the wavelength range from 1175nm to 1310nm and a high efficient (> 0.9) half-wave plate at the wavelength range from 1130nm to 1230nm. The proposed polarization converters may have many potential applications in integrated polarization conversion devices and optical data storage systems.

High energy efficient solid state laser sources

NASA Technical Reports Server (NTRS)

Byer, Robert L.

1989-01-01

Recent progress in the development of highly efficient coherent optical sources was reviewed. This work has focused on nonlinear frequency conversion of the highly coherent output of the non-planar ring laser oscillators developed earlier in the program, and includes high efficiency second harmonic generation and the operation of optical parametric oscillators for wavelength diversity and tunability.

High probability neurotransmitter release sites represent an energy efficient design

PubMed Central

Lu, Zhongmin; Chouhan, Amit K.; Borycz, Jolanta A.; Lu, Zhiyuan; Rossano, Adam J; Brain, Keith L.; Zhou, You; Meinertzhagen, Ian A.; Macleod, Gregory T.

2016-01-01

Nerve terminals contain multiple sites specialized for the release of neurotransmitters. Release usually occurs with low probability, a design thought to confer many advantages. High probability release sites are not uncommon but their advantages are not well understood. Here we test the hypothesis that high probability release sites represent an energy efficient design. We examined release site probabilities and energy efficiency at the terminals of two glutamatergic motor neurons synapsing on the same muscle fiber in Drosophila larvae. Through electrophysiological and ultrastructural measurements we calculated release site probabilities to differ considerably between terminals (0.33 vs. 0.11). We estimated the energy required to release and recycle glutamate from the same measurements. The energy required to remove calcium and sodium ions subsequent to nerve excitation was estimated through microfluorimetric and morphological measurements. We calculated energy efficiency as the number of glutamate molecules released per ATP molecule hydrolyzed, and high probability release site terminals were found to be more efficient (0.13 vs. 0.06). Our analytical model indicates that energy efficiency is optimal (~0.15) at high release site probabilities (~0.76). As limitations in energy supply constrain neural function, high probability release sites might ameliorate such constraints by demanding less energy. Energy efficiency can be viewed as one aspect of nerve terminal function, in balance with others, because high efficiency terminals depress significantly during episodic bursts of activity. PMID:27593375

SiN sub x passivation of silicon surfaces

NASA Technical Reports Server (NTRS)

Olsen, L. C.

1986-01-01

The objectives were to perform surface characterization of high efficiency n+/p and p+/n silicon cells, to relate surface density to substrate dopant concentration, and to identify dominant current loss mechanisms in high efficiency cells. The approach was to measure density of states on homogeneously doped substrates with high frequency C-V and Al/SiN sub x/Si structures; to investigate density of states and photoresponse of high efficiency N+/P and P+/N cells; and to conduct I-V-T studies to identify current loss nechanisms in high efficiency cells. Results are given in tables and graphs.

Diboron compound-based organic light-emitting diodes with high efficiency and reduced efficiency roll-off

NASA Astrophysics Data System (ADS)

Wu, Tien-Lin; Huang, Min-Jie; Lin, Chih-Chun; Huang, Pei-Yun; Chou, Tsu-Yu; Chen-Cheng, Ren-Wu; Lin, Hao-Wu; Liu, Rai-Shung; Cheng, Chien-Hong

2018-04-01

Organic light-emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) materials are promising for the realization of highly efficient light emitters. However, such devices have so far suffered from efficiency roll-off at high luminance. Here, we report the design and synthesis of two diboron-based molecules, CzDBA and tBuCzDBA, which show excellent TADF properties and yield efficient OLEDs with very low efficiency roll-off. These donor-acceptor-donor (D-A-D) type and rod-like compounds concurrently generate TADF with a photoluminescence quantum yield of 100% and an 84% horizontal dipole ratio in the thin film. A green OLED based on CzDBA exhibits a high external quantum efficiency of 37.8 ± 0.6%, a current efficiency of 139.6 ± 2.8 cd A-1 and a power efficiency of 121.6 ± 3.1 lm W-1 with an efficiency roll-off of only 0.3% at 1,000 cd m-2. The device has a peak emission wavelength of 528 nm and colour coordinates of the Commission International de ĺEclairage (CIE) of (0.31, 0.61), making it attractive for colour-display applications.

[Characteristics of phosphorus uptake and use efficiency of rice with high yield and high phosphorus use efficiency].

PubMed

Li, Li; Zhang, Xi-Zhou; Li, Tinx-Xuan; Yu, Hai-Ying; Ji, Lin; Chen, Guang-Deng

2014-07-01

A total of twenty seven middle maturing rice varieties as parent materials were divided into four types based on P use efficiency for grain yield in 2011 by field experiment with normal phosphorus (P) application. The rice variety with high yield and high P efficiency was identified by pot experiment with normal and low P applications, and the contribution rates of various P efficiencies to yield were investigated in 2012. There were significant genotype differences in yield and P efficiency of the test materials. GRLu17/AiTTP//Lu17_2 (QR20) was identified as a variety with high yield and high P efficiency, and its yields at the low and normal rates of P application were 1.96 and 1.92 times of that of Yuxiang B, respectively. The contribution rate of P accumulation to yield was greater than that of P grain production efficiency and P harvest index across field and pot experiments. The contribution rates of P accumulation and P grain production efficiency to yield were not significantly different under the normal P condition, whereas obvious differences were observed under the low P condition (66.5% and 26.6%). The minimal contribution to yield was P harvest index (11.8%). Under the normal P condition, the contribution rates of P accumulation to yield and P harvest index were the highest at the jointing-heading stage, which were 93.4% and 85.7%, respectively. In addition, the contribution rate of P accumulation to grain production efficiency was 41.8%. Under the low P condition, the maximal contribution rates of P accumulation to yield and grain production efficiency were observed at the tillering-jointing stage, which were 56.9% and 20.1% respectively. Furthermore, the contribution rate of P accumulation to P harvest index was 16.0%. The yield, P accumulation, and P harvest index of QR20 significantly increased under the normal P condition by 20.6%, 18.1% and 18.2% respectively compared with that in the low P condition. The rank of the contribution rates of P efficiencies to the yield was in order of P uptake efficiency > P utilization efficiency > P transportation efficiency. The greatest contribution rate of P accumulation to the yield was noticed at the jointing-heading stage with the normal P application while it reached the maximal value at the tillering-jointing stage with the low P application. Therefore, these two stages may be the critical periods to coordinate high yield and high P efficiency in rice.

High-voltage space-plasma interactions measured on the PASP Plus test arrays

NASA Astrophysics Data System (ADS)

Guidice, Donald A.

1995-10-01

The Photovoltaic Array Space Power Plus Diagnostics (PASP Plus) experiment was developed by the Air Force's Phillips Laboratory with support from NASA's Lewis Research Center. It was launched on the Advanced Photovoltaic and Electronics EXperiments (APEX) satellite on August 3, 1994 into a 70 degree inclination, 363 km by 2550 km elliptical orbit. This orbit allows the investigation of space plasma effects on high-voltage operation (leakage current at positive voltages and arcing at negative voltages) in the perigee region. PASP Plus is testing twelve solar arrays. There are four planar Si arrays: an old standard type (used as a reference), the large-cell Space Station Freedom (SSF) array, a thin 'APSA' array, and an amorphous Si array. Next are three GaAs on Ge planar arrays and three new material planar arrays, including InP and two multijunction types. Finally, there are two concentrator arrays: a reflective-focusing Mini-Cassegrainian and a Fresnel-lens focusing Mini-Dome. PASP Plus's diagnostic sensors include: Langmuir probe to measure plasma density, an electrostatic analyzer (ESA) to measure the 30 eV to 30 KeV electron/ion spectra and determine vehicle negative potential during positive biasing, and a transient pulse monitor (TPM) to characterize the arcs that occur during the negative biasing. Through positive biasing of its test arrays, PASP Plus investigated the snapover phenomenon, which took place over the range of +100 to +300 V. It was found that array configurations where the interconnects are shielded from the space plasma (i.e., the concentrators or arrays with 'wrap-through' connectors) have lower leakage current. The concentrators exhibited negligible leakage current over the whole range up to +500 V. In the case of two similar GaAs on Ge arrays, the one with 'wrap-through' connectors had lower leakage current than the one with conventional interconnects. Through negative biasing, PASP Plus investigated the arcing rates of its test arrays. The standard Si array, with its old construction (exposed rough-surface interconnects), arced significantly over a wide voltage and plasma-density range. The other arrays arced at very low rates, mostly at voltages greater than -350 V and plasma densities near or greater than 10(exp 5)/cm(exp -3). AS expected according to theory, arcing was more prevalent when array temperatures were cold (based on biasing in eclipse).

High-voltage space-plasma interactions measured on the PASP Plus test arrays

NASA Technical Reports Server (NTRS)

Guidice, Donald A.

1995-01-01

The Photovoltaic Array Space Power Plus Diagnostics (PASP Plus) experiment was developed by the Air Force's Phillips Laboratory with support from NASA's Lewis Research Center. It was launched on the Advanced Photovoltaic and Electronics EXperiments (APEX) satellite on August 3, 1994 into a 70 degree inclination, 363 km by 2550 km elliptical orbit. This orbit allows the investigation of space plasma effects on high-voltage operation (leakage current at positive voltages and arcing at negative voltages) in the perigee region. PASP Plus is testing twelve solar arrays. There are four planar Si arrays: an old standard type (used as a reference), the large-cell Space Station Freedom (SSF) array, a thin 'APSA' array, and an amorphous Si array. Next are three GaAs on Ge planar arrays and three new material planar arrays, including InP and two multijunction types. Finally, there are two concentrator arrays: a reflective-focusing Mini-Cassegrainian and a Fresnel-lens focusing Mini-Dome. PASP Plus's diagnostic sensors include: Langmuir probe to measure plasma density, an electrostatic analyzer (ESA) to measure the 30 eV to 30 KeV electron/ion spectra and determine vehicle negative potential during positive biasing, and a transient pulse monitor (TPM) to characterize the arcs that occur during the negative biasing. Through positive biasing of its test arrays, PASP Plus investigated the snapover phenomenon, which took place over the range of +100 to +300 V. It was found that array configurations where the interconnects are shielded from the space plasma (i.e., the concentrators or arrays with 'wrap-through' connectors) have lower leakage current. The concentrators exhibited negligible leakage current over the whole range up to +500 V. In the case of two similar GaAs on Ge arrays, the one with 'wrap-through' connectors had lower leakage current than the one with conventional interconnects. Through negative biasing, PASP Plus investigated the arcing rates of its test arrays. The standard Si array, with its old construction (exposed rough-surface interconnects), arced significantly over a wide voltage and plasma-density range. The other arrays arced at very low rates, mostly at voltages greater than -350 V and plasma densities near or greater than 10(exp 5)/cm(exp -3). AS expected according to theory, arcing was more prevalent when array temperatures were cold (based on biasing in eclipse).

White organic light-emitting diodes with fluorescent tube efficiency.

PubMed

Reineke, Sebastian; Lindner, Frank; Schwartz, Gregor; Seidler, Nico; Walzer, Karsten; Lüssem, Björn; Leo, Karl

2009-05-14

The development of white organic light-emitting diodes (OLEDs) holds great promise for the production of highly efficient large-area light sources. High internal quantum efficiencies for the conversion of electrical energy to light have been realized. Nevertheless, the overall device power efficiencies are still considerably below the 60-70 lumens per watt of fluorescent tubes, which is the current benchmark for novel light sources. Although some reports about highly power-efficient white OLEDs exist, details about structure and the measurement conditions of these structures have not been fully disclosed: the highest power efficiency reported in the scientific literature is 44 lm W(-1) (ref. 7). Here we report an improved OLED structure which reaches fluorescent tube efficiency. By combining a carefully chosen emitter layer with high-refractive-index substrates, and using a periodic outcoupling structure, we achieve a device power efficiency of 90 lm W(-1) at 1,000 candelas per square metre. This efficiency has the potential to be raised to 124 lm W(-1) if the light outcoupling can be further improved. Besides approaching internal quantum efficiency values of one, we have also focused on reducing energetic and ohmic losses that occur during electron-photon conversion. We anticipate that our results will be a starting point for further research, leading to white OLEDs having efficiencies beyond 100 lm W(-1). This could make white-light OLEDs, with their soft area light and high colour-rendering qualities, the light sources of choice for the future.

Building America Case Study: Simple Retrofit High-Efficiency Natural Gas Water Heater Field Test, Minneapolis, Minnesota

DOE Office of Scientific and Technical Information (OSTI.GOV)

High performance water heaters are typically more time consuming and costly to install in retrofit applications, making high performance water heaters difficult to justify economically. However, recent advancements in high performance water heaters have targeted the retrofit market, simplifying installations and reducing costs. Four high efficiency natural gas water heaters designed specifically for retrofit applications were installed in single-family homes along with detailed monitoring systems to characterize their savings potential, their installed efficiencies, and their ability to meet household demands. The water heaters tested for this project were designed to improve the cost-effectiveness and increase market penetration of high efficiencymore » water heaters in the residential retrofit market. The retrofit high efficiency water heaters achieved their goal of reducing costs, maintaining savings potential and installed efficiency of other high efficiency water heaters, and meeting the necessary capacity in order to improve cost-effectiveness. However, the improvements were not sufficient to achieve simple paybacks of less than ten years for the incremental cost compared to a minimum efficiency heater. Significant changes would be necessary to reduce the simple payback to six years or less. Annual energy savings in the range of $200 would also reduce paybacks to less than six years. These energy savings would require either significantly higher fuel costs (greater than $1.50 per therm) or very high usage (around 120 gallons per day). For current incremental costs, the water heater efficiency would need to be similar to that of a heat pump water heater to deliver a six year payback.« less

Simple Retrofit High-Efficiency Natural Gas Water Heater Field Test

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schoenbauer, Ben

High performance water heaters are typically more time consuming and costly to install in retrofit applications, making high performance water heaters difficult to justify economically. However, recent advancements in high performance water heaters have targeted the retrofit market, simplifying installations and reducing costs. Four high efficiency natural gas water heaters designed specifically for retrofit applications were installed in single-family homes along with detailed monitoring systems to characterize their savings potential, their installed efficiencies, and their ability to meet household demands. The water heaters tested for this project were designed to improve the cost-effectiveness and increase market penetration of high efficiencymore » water heaters in the residential retrofit market. The retrofit high efficiency water heaters achieved their goal of reducing costs, maintaining savings potential and installed efficiency of other high efficiency water heaters, and meeting the necessary capacity in order to improve cost-effectiveness. However, the improvements were not sufficient to achieve simple paybacks of less than ten years for the incremental cost compared to a minimum efficiency heater. Significant changes would be necessary to reduce the simple payback to six years or less. Annual energy savings in the range of $200 would also reduce paybacks to less than six years. These energy savings would require either significantly higher fuel costs (greater than $1.50 per therm) or very high usage (around 120 gallons per day). For current incremental costs, the water heater efficiency would need to be similar to that of a heat pump water heater to deliver a six year payback.« less