High power RF solid state power amplifier system
NASA Technical Reports Server (NTRS)
Sims, III, William Herbert (Inventor); Chavers, Donald Gregory (Inventor); Richeson, James J. (Inventor)
2011-01-01
A high power, high frequency, solid state power amplifier system includes a plurality of input multiple port splitters for receiving a high-frequency input and for dividing the input into a plurality of outputs and a plurality of solid state amplifier units. Each amplifier unit includes a plurality of amplifiers, and each amplifier is individually connected to one of the outputs of multiport splitters and produces a corresponding amplified output. A plurality of multiport combiners combine the amplified outputs of the amplifiers of each of the amplifier units to a combined output. Automatic level control protection circuitry protects the amplifiers and maintains a substantial constant amplifier power output.
NASA Astrophysics Data System (ADS)
Stappel, M.; Steinborn, R.; Kolbe, D.; Walz, J.
2013-07-01
We present a high power single-frequency ytterbium fiber amplifier system with an output power of 30 W at 1091 nm. The amplifier system consists of two stages, a preamplifier stage in which amplified spontaneous emission is efficiently suppressed (>40 dB) and a high power amplifier with an efficiency of 52%. Two different approaches to frequency doubling are compared. We achieve 8.6 W at 545.5 nm by single-pass frequency doubling in a MgO-doped periodically poled stoichiometric LiTaO3 crystal and up to 19.3 W at 545.5 nm by frequency doubling with a lithium-triborate crystal in an external enhancement cavity.
Broadband linear high-voltage amplifier for radio frequency ion traps.
Kuhlicke, Alexander; Palis, Klaus; Benson, Oliver
2014-11-01
We developed a linear high-voltage amplifier for small capacitive loads consisting of a high-voltage power supply and a transistor amplifier. With this cost-effective circuit including only standard parts sinusoidal signals with a few volts can be amplified to 1.7 kVpp over a usable frequency range at large-signal response spanning four orders of magnitude from 20 Hz to 100 kHz under a load of 10 pF. For smaller output voltages the maximum frequency shifts up to megahertz. We test different capacitive loads to probe the influence on the performance. The presented amplifier is sustained short-circuit proof on the output side, which is a significant advantage over other amplifier concepts. The amplifier can be used to drive radio frequency ion traps for single charged nano- and microparticles, which will be presented in brief.
De Shong, J.A. Jr.
1957-12-31
A logarithmic current amplifier circuit having a high sensitivity and fast response is described. The inventor discovered the time constant of the input circuit of a system utilizing a feedback amplifier, ionization chamber, and a diode, is inversely proportional to the input current, and that the amplifier becomes unstable in amplifying signals in the upper frequency range when the amplifier's forward gain time constant equals the input circuit time constant. The described device incorporates impedance networks having low frequency response characteristic at various points in the circuit to change the forward gain of the amplifler at a rate of 0.7 of the gain magnitude for every two times increased in frequency. As a result of this improvement, the time constant of the input circuit is greatly reduced at high frequencies, and the amplifier response is increased.
Multifrequency Raman amplifiers
NASA Astrophysics Data System (ADS)
Barth, Ido; Fisch, Nathaniel J.
2018-03-01
In its usual implementation, the Raman amplifier features only one pump carrier frequency. However, pulses with well-separated frequencies can also be Raman amplified while compressed in time. Amplification with frequency-separated pumps is shown to hold even in the highly nonlinear, pump-depletion regime, as derived through a fluid model, and demonstrated via particle-in-cell simulations. The resulting efficiency is similar to single-frequency amplifiers, but, due to the beat-wave waveform of both the pump lasers and the amplified seed pulses, these amplifiers feature higher seed intensities with a shorter spike duration. Advantageously, these amplifiers also suffer less noise backscattering, because the total fluence is split between the different spectral components.
Multifrequency Raman amplifiers
Barth, Ido; Fisch, Nathaniel J.
2018-03-08
In its usual implementation, the Raman amplifier features only one pump carrier frequency. However, pulses with well-separated frequencies can also be Raman amplified while compressed in time. Amplification with frequency-separated pumps is shown to hold even in the highly nonlinear, pump-depletion regime, as derived through a fluid model, and demonstrated via particle-in-cell (PIC) simulations. The resulting efficiency is similar to single-frequency amplifiers, but, due to the beat-wave waveform of both the pump lasers and the amplified seed pulses, these amplifiers feature higher seed intensities with a shorter spike duration. Advantageously, these amplifiers also suffer less noise backscattering, because the totalmore » fluence is split between the different spectral components.« less
Multifrequency Raman amplifiers
DOE Office of Scientific and Technical Information (OSTI.GOV)
Barth, Ido; Fisch, Nathaniel J.
In its usual implementation, the Raman amplifier features only one pump carrier frequency. However, pulses with well-separated frequencies can also be Raman amplified while compressed in time. Amplification with frequency-separated pumps is shown to hold even in the highly nonlinear, pump-depletion regime, as derived through a fluid model, and demonstrated via particle-in-cell (PIC) simulations. The resulting efficiency is similar to single-frequency amplifiers, but, due to the beat-wave waveform of both the pump lasers and the amplified seed pulses, these amplifiers feature higher seed intensities with a shorter spike duration. Advantageously, these amplifiers also suffer less noise backscattering, because the totalmore » fluence is split between the different spectral components.« less
1997 Technology Applications Report,
1997-01-01
handle high -power loads at microwave radio frequencies , microwave vacuum tubes remain the chosen technology to amplify high power. Aria Microwave...structure called the active RF cavity amplifier (ARFCA). With this design , the amplifier handles high -power loads at radio and microwave frequencies ...developed this technology using BMDO-funded modeling methods designed to simulate the dynamics of large space-based structures. Because it increases
Low phase noise oscillator using two parallel connected amplifiers
NASA Technical Reports Server (NTRS)
Kleinberg, Leonard L.
1987-01-01
A high frequency oscillator is provided by connecting two amplifier circuits in parallel where each amplifier circuit provides the other amplifier circuit with the conditions necessary for oscillation. The inherent noise present in both amplifier circuits causes the quiescent current, and in turn, the generated frequency, to change. The changes in quiescent current cause the transconductance and the load impedance of each amplifier circuit to vary, and this in turn results in opposing changes in the input susceptance of each amplifier circuit. Because the changes in input susceptance oppose each other, the changes in quiescent current also oppose each other. The net result is that frequency stability is enhanced.
Computer-aided design of high-frequency transistor amplifiers.
NASA Technical Reports Server (NTRS)
Hsieh, C.-C.; Chan, S.-P.
1972-01-01
A systematic step-by-step computer-aided procedure for designing high-frequency transistor amplifiers is described. The technique makes it possible to determine the optimum source impedance which gives a minimum noise figure.
Power enhanced frequency conversion system
NASA Technical Reports Server (NTRS)
Sanders, Steven (Inventor); Lang, Robert J. (Inventor); Waarts, Robert G. (Inventor)
2001-01-01
A frequency conversion system includes at least one source providing a first near-IR wavelength output including a gain medium for providing high power amplification, such as double clad fiber amplifier, a double clad fiber laser or a semiconductor tapered amplifier to enhance the power output level of the near-IR wavelength output. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Ra-man/Brillouin amplifier or oscillator between the high power source and the NFM device.
Power-Amplifier Module for 145 to 165 GHz
NASA Technical Reports Server (NTRS)
Samoska, Lorene; Peralta, Alejandro
2007-01-01
A power-amplifier module that operates in the frequency range of 145 to 165 GHz has been designed and constructed as a combination of (1) a previously developed monolithic microwave integrated circuit (MMIC) power amplifier and (2) a waveguide module. The amplifier chip was needed for driving a high-electron-mobility-transistor (HEMT) frequency doubler. While it was feasible to connect the amplifier and frequency-doubler chips by use of wire bonds, it was found to be much more convenient to test the amplifier and doubler chips separately. To facilitate separate testing, it was decided to package the amplifier and doubler chips in separate waveguide modules. Figure 1 shows the resulting amplifier module. The amplifier chip was described in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11, (November 2003), page 49. To recapitulate: This is a three-stage MMIC power amplifier that utilizes HEMTs as gain elements. The amplifier was originally designed to operate in the frequency range of 140 to 170 GHz. The waveguide module is based on a previously developed lower frequency module, redesigned to support operation in the frequency range of 140 to 220 GHz. Figure 2 presents results of one of several tests of the amplifier module - measurements of output power and gain as functions of input power at an output frequency of 150 GHz. Such an amplifier module has many applications to test equipment for power sources above 100 GHz.
Low-sensitivity, frequency-selective amplifier circuits for hybrid and bipolar fabrication.
NASA Technical Reports Server (NTRS)
Pi, C.; Dunn, W. R., Jr.
1972-01-01
A network is described which is suitable for realizing a low-sensitivity high-Q second-order frequency-selective amplifier for high-frequency operation. Circuits are obtained from this network which are well suited for realizing monolithic integrated circuits and which do not require any process steps more critical than those used for conventional monolithic operational and video amplifiers. A single chip version using compatible thin-film techniques for the frequency determination elements is then feasible. Center frequency and bandwidth can be set independently by trimming two resistors. The frequency selective circuits have a low sensitivity to the process variables, and the sensitivity of the center frequency and bandwidth to changes in temperature is very low.
NASA developments in solid state power amplifiers
NASA Technical Reports Server (NTRS)
Leonard, Regis F.
1990-01-01
Over the last ten years, NASA has undertaken an extensive program aimed at development of solid state power amplifiers for space applications. Historically, the program may be divided into three phases. The first efforts were carried out in support of the advanced communications technology satellite (ACTS) program, which is developing an experimental version of a Ka-band commercial communications system. These first amplifiers attempted to use hybrid technology. The second phase was still targeted at ACTS frequencies, but concentrated on monolithic implementations, while the current, third phase, is a monolithic effort that focusses on frequencies appropriate for other NASA programs and stresses amplifier efficiency. The topics covered include: (1) 20 GHz hybrid amplifiers; (2) 20 GHz monolithic MESFET power amplifiers; (3) Texas Instruments' (TI) 20 GHz variable power amplifier; (4) TI 20 GHz high power amplifier; (5) high efficiency monolithic power amplifiers; (6) GHz high efficiency variable power amplifier; (7) TI 32 GHz monolithic power amplifier performance; (8) design goals for Hughes' 32 GHz variable power amplifier; and (9) performance goals for Hughes' pseudomorphic 60 GHz power amplifier.
MMIC DHBT Common-Base Amplifier for 172 GHz
NASA Technical Reports Server (NTRS)
Paidi, Vamsi; Griffith, Zack; Wei, Yun; Dahlstrom, Mttias; Urteaga, Miguel; Rodwell, Mark; Samoska, Lorene; Fung, King Man; Schlecht, Erich
2006-01-01
Figure 1 shows a single-stage monolithic microwave integrated circuit (MMIC) power amplifier in which the gain element is a double-heterojunction bipolar transistor (DHBT) connected in common-base configuration. This amplifier, which has been demonstrated to function well at a frequency of 172 GHz, is part of a continuing effort to develop compact, efficient amplifiers for scientific instrumentation, wide-band communication systems, and radar systems that will operate at frequencies up to and beyond 180 GHz. The transistor is fabricated from a layered structure formed by molecular beam epitaxy in the InP/InGaAs material system. A highly doped InGaAs base layer and a collector layer are fabricated from the layered structure in a triple mesa process. The transistor includes two separate emitter fingers, each having dimensions of 0.8 by 12 m. The common-base configuration was chosen for its high maximum stable gain in the frequency band of interest. The input-matching network is designed for high bandwidth. The output of the transistor is matched to a load line for maximum saturated output power under large-signal conditions, rather than being matched for maximum gain under small-signal conditions. In a test at a frequency of 172 GHz, the amplifier was found to generate an output power of 7.5 mW, with approximately 5 dB of large-signal gain (see Figure 2). Moreover, the amplifier exhibited a peak small-signal gain of 7 dB at a frequency of 176 GHz. This performance of this MMIC single-stage amplifier containing only a single transistor represents a significant advance in the state of the art, in that it rivals the 170-GHz performance of a prior MMIC three-stage, four-transistor amplifier. [The prior amplifier was reported in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 49.] This amplifier is the first heterojunction- bipolar-transistor (HBT) amplifier built for medium power operation in this frequency band. The performance of the amplifier as measured in the aforementioned tests suggests that InP/InGaAs HBTs may be superior to high-electron-mobility (HEMT) transistors in that the HBTs may offer more gain per stage and more output power per transistor.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kurkin, S. A., E-mail: KurkinSA@gmail.com; Koronovskii, A. A.; Saratov State Technical University, Politechnicheskaja 77, Saratov 410028
2015-04-13
The high-power scheme for the amplification of powerful microwave signals based on the overcritical electron beam with a virtual cathode (virtual cathode amplifier) has been proposed and investigated numerically. General output characteristics of the virtual cathode amplifier including the dependencies of the power gain on the input signal frequency and amplitude have been obtained and analyzed. The possibility of the geometrical working frequency tuning over the range about 8%–10% has been shown. The obtained results demonstrate that the proposed virtual cathode amplifier scheme may be considered as the perspective high-power microwave amplifier with gain up to 18 dB, and with themore » following important advantages: the absence of external magnetic field, the simplicity of construction, the possibility of geometrical frequency tuning, and the amplification of relatively powerful microwave signals.« less
Some Notes on Wideband Feedback Amplifiers
DOE R&D Accomplishments Database
Fitch, V.
1949-03-16
The extension of the passband of wideband amplifiers is a highly important problem to the designer of electronic circuits. Throughout the electronics industry and in many research programs in physics and allied fields where extensive use is made of video amplifiers, the foremost requirement is a passband of maximum width. This is necessary if it is desired to achieve a more faithful reproduction of transient wave forms, a better time resolution in physical measurements, or perhaps just a wider band gain-frequency response to sine wave signals. The art of electronics is continually faced with this omnipresent amplifier problem. In particular, the instrumentation techniques of nuclear physics require amplifiers with short rise times, a high degree of gain stability, and a linear response to high signal levels. While the distributed amplifier may solve the problems of those seeking only a wide passband, the requirements of stability and linearity necessitate using feedback circuits. This paper considers feedback amplifiers from the standpoint of high-frequency performance. The circuit conditions for optimum steady-state (sinusoidal) and transient response are derived and practical circuits (both interstage and output) are presented which fulfill these conditions. In general, the results obtained may be applied to the low-frequency end.
Yang, Kangwen; Li, Wenxue; Yan, Ming; Shen, Xuling; Zhao, Jian; Zeng, Heping
2012-06-04
A high-power ultra-broadband frequency comb covering the spectral range from ultraviolet to infrared was generated directly by nonlinear frequency conversion of a multi-stage high-power fiber comb amplifier. The 1030-nm infrared spectral fraction of a broadband Ti:sapphire femtosecond frequency comb was power-scaled up to 100 W average power by using a large-mode-area fiber chirped-pulse amplifier. We obtained a frequency-doubled green comb at 515 nm and frequency-quadrupled ultraviolet pulses at 258 nm with the average power of 12.8 and 1.62 W under the input infrared power of 42.2 W, respectively. The carrier envelope phase stabilization was accomplished with an ultra-narrow line-width of 1.86 mHz and a quite low accumulated phase jitter of 0.41 rad, corresponding to a timing jitter of 143 as.
ERIC Educational Resources Information Center
Schubert, T. F., Jr.; Kim, E. M.
2009-01-01
The use of Miller's Theorem in the determination of the high-frequency cutoff frequency of transistor amplifiers was recently challenged by a paper published in this TRANSACTIONS. Unfortunately, that paper provided no simulation or experimental results to bring credence to the challenge or to validate the alternate method of determination…
Mahnke, Peter
2018-01-01
A commercial software defined radio based on a Rafael Micro R820T2 tuner is characterized for the use as a high-frequency lock-in amplifier for frequency modulation spectroscopy. The sensitivity limit of the receiver is 1.6 nV/Hz. Frequency modulation spectroscopy is demonstrated on the 6406.69 cm -1 absorption line of carbon monoxide.
NASA Astrophysics Data System (ADS)
Mahnke, Peter
2018-01-01
A commercial software defined radio based on a Rafael Micro R820T2 tuner is characterized for the use as a high-frequency lock-in amplifier for frequency modulation spectroscopy. The sensitivity limit of the receiver is 1.6 nV/√{Hz }. Frequency modulation spectroscopy is demonstrated on the 6406.69 cm-1 absorption line of carbon monoxide.
High temperature charge amplifier for geothermal applications
Lindblom, Scott C.; Maldonado, Frank J.; Henfling, Joseph A.
2015-12-08
An amplifier circuit in a multi-chip module includes a charge to voltage converter circuit, a voltage amplifier a low pass filter and a voltage to current converter. The charge to voltage converter receives a signal representing an electrical charge and generates a voltage signal proportional to the input signal. The voltage amplifier receives the voltage signal from the charge to voltage converter, then amplifies the voltage signal by the gain factor to output an amplified voltage signal. The lowpass filter passes low frequency components of the amplified voltage signal and attenuates frequency components greater than a cutoff frequency. The voltage to current converter receives the output signal of the lowpass filter and converts the output signal to a current output signal; wherein an amplifier circuit output is selectable between the output signal of the lowpass filter and the current output signal.
Self-shielding printed circuit boards for high frequency amplifiers and transmitters
NASA Technical Reports Server (NTRS)
Galvin, D.
1969-01-01
Printed circuit boards retaining as much copper as possible provide electromagnetic shielding between stages of the high frequency amplifiers and transmitters. Oscillation is prevented, spurious output signals are reduced, and multiple stages are kept isolated from each other, both thermally and electrically.
Improved RF Isolation Amplifier
NASA Technical Reports Server (NTRS)
Stevens, G. L.; Macconnell, J.
1985-01-01
Circuit has high reverse isolation and wide bandwidth. Wideband isolation amplifier has low intermodulation distortion and high reverse isolation. Circuit does not require selected or matched components or directional coupling device. Circuit used in applications requiring high reverse isolation such as receiver intermediate-frequency (IF) strips and frequency distribution systems. Also applicable in RF and video signaling.
NASA Astrophysics Data System (ADS)
Kubodera, Shinji; Tanzawa, Tsutomu; Morisawa, Masayuki; Kiyohiro, Noriaki
Carrier type dynamic strain amplifiers are frequently used for stress measurement with strain gages. That is because the carrier type dynamic strain amplifier can conduct high precision measurement since it is highly resistant against hum noise from the power supply frequency in principle and is free from the thermoelectomotive force even if a metal contact is used in wiring to a Wheatstone bridge for measuring. A problem of the carrier type dynamic strain amplifier is generation of Capacitive component (hereinafter referred to as the C component) in an input cable connecting from the amplifier to the input sensor (Wheatstone bridge for measuring). The C component varies with cable length, cable materials, or ambient temperature change. The aforementioned changing adversely affects the stability of the amplifier. In this paper, we realize and analyze the method that increases the stability of amplifier by detecting, eliminating and self tracking the above C component constantly. Used carrier frequency at 12kHz and 28kHz. We made amplifiers with noise resistant and wide band frequency of measurement range and verified the theory of the Capacitance Self Tracing with the above amplifiers.
NASA Technical Reports Server (NTRS)
Jarosik, Norman
1994-01-01
Low frequency gain fluctuations of a 30 GHz cryogenic HEMT amplifier have been measured with the input of the amplifier connected to a 15 K load. Effects of fluctuations of other components of the test set-up were eliminated by use of a power-power correlation technique. Strong correlation between output power fluctuations of the amplifier and drain current fluctuations of the transistors comprising the amplifier are observed. The existence of these correlations introduces the possibility of regressing some of the excess noise from the HEMT amplifier's output using the measured drain currents.
Solid-State Laser Source of Tunable Narrow-Bandwidth Ultraviolet Radiation
NASA Technical Reports Server (NTRS)
Goldberg, Lew; Kliner, Dahv A.; Koplow, Jeffrey P.
1998-01-01
A solid-state laser source of tunable and narrow-bandwidth UV light is disclosed. The system relies on light from a diode laser that preferably generates light at infrared frequencies. The light from the seed diode laser is pulse amplified in a light amplifier, and converted into the ultraviolet by frequency tripling, quadrupling, or quintupling the infrared light. The narrow bandwidth, or relatively pure light, of the seed laser is preserved, and the pulse amplifier generates high peak light powers to increase the efficiency of the nonlinear crystals in the frequency conversion stage. Higher output powers may be obtained by adding a fiber amplifier to power amplify the pulsed laser light prior to conversion.
A 160 W single-frequency laser based on an active tapered double-clad fiber amplifier
NASA Astrophysics Data System (ADS)
Trikshev, A. I.; Kurkov, A. S.; Tsvetkov, V. B.; Filatova, S. A.; Kertulla, J.; Filippov, V.; Chamorovskiy, Yu K.; Okhotnikov, O. G.
2013-06-01
We present a CW single-frequency laser at 1062 nm (linewidth <3 MHz) with 160 W of total output power based on a two stage fiber amplifier. A GTWave fiber is used for the first stage of the amplifier. A tapered double-clad fiber (T-DCF) is used for the second stage of the amplifier. The high output power is achieved due to the amplified spontaneous emission (ASE) filtering and increased stimulated Brillouin scattering (SBS) threshold inherent to the axially non-uniform geometry.
Cochems, P; Kirk, A; Zimmermann, S
2014-12-01
Parasitic elements play an important role in the development of every high performance circuit. In the case of high gain, high bandwidth transimpedance amplifiers, the most important parasitic elements are parasitic capacitances at the input and in the feedback path, which significantly influence the stability, the frequency response, and the noise of the amplifier. As these parasitic capacitances range from a few picofarads down to only a few femtofarads, it is nearly impossible to measure them accurately using traditional LCR meters. Unfortunately, they also cannot be easily determined from the transfer function of the transimpedance amplifier, as it contains several overlapping effects and its measurement is only possible when the circuit is already stable. Therefore, we developed an in-circuit measurement method utilizing minimal modifications to the input stage in order to measure its parasitic capacitances directly and with unconditional stability. Furthermore, using the data acquired with this measurement technique, we both proposed a model for the complicated frequency response of high value thick film resistors as they are used in high gain transimpedance amplifiers and optimized our transimpedance amplifier design.
93-133 GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology
NASA Astrophysics Data System (ADS)
Sato, Masaru; Shiba, Shoichi; Matsumura, Hiroshi; Takahashi, Tsuyoshi; Nakasha, Yasuhiro; Suzuki, Toshihide; Hara, Naoki
2013-04-01
In this study, we developed a new type of high-frequency amplifier topology using 75-nm-gate-length InP-based high-electron-mobility transistors (InP HEMTs). To enhance the gain for a wide frequency range, a common-source common-gate hybrid amplifier topology was proposed. A transformer-based balun placed at the input of the amplifier generates differential signals, which are fed to the gate and source terminals of the transistor. The amplified signal is outputted at the drain node. The simulation results show that the hybrid topology exhibits a higher gain from 90 to 140 GHz than that of the conventional common-source or common-gate amplifier. The two-stage amplifier fabricated using the topology exhibits a small signal gain of 12 dB and a 3-dB bandwidth of 40 GHz (93-133 GHz), which is the largest bandwidth and the second highest gain reported among those of published 120-GHz-band amplifiers. In addition, the measured noise figure was 5 dB from 90 to 100 GHz.
Bias-Voltage Stabilizer for HVHF Amplifiers in VHF Pulse-Echo Measurement Systems.
Choi, Hojong; Park, Chulwoo; Kim, Jungsuk; Jung, Hayong
2017-10-23
The impact of high-voltage-high-frequency (HVHF) amplifiers on echo-signal quality is greater with very-high-frequency (VHF, ≥100 MHz) ultrasound transducers than with low-frequency (LF, ≤15 MHz) ultrasound transducers. Hence, the bias voltage of an HVHF amplifier must be stabilized to ensure stable echo-signal amplitudes. We propose a bias-voltage stabilizer circuit to maintain stable DC voltages over a wide input range, thus reducing the harmonic-distortion components of the echo signals in VHF pulse-echo measurement systems. To confirm the feasibility of the bias-voltage stabilizer, we measured and compared the deviations in the gain of the HVHF amplifier with and without a bias-voltage stabilizer. Between -13 and 26 dBm, the measured gain deviations of a HVHF amplifier with a bias-voltage stabilizer are less than that of an amplifier without a bias-voltage stabilizer. In order to confirm the feasibility of the bias-voltage stabilizer, we compared the pulse-echo responses of the amplifiers, which are typically used for the evaluation of transducers or electronic components used in pulse-echo measurement systems. From the responses, we observed that the amplitudes of the echo signals of a VHF transducer triggered by the HVHF amplifier with a bias-voltage stabilizer were higher than those of the transducer triggered by the HVHF amplifier alone. The second, third, and fourth harmonic-distortion components of the HVHF amplifier with the bias-voltage stabilizer were also lower than those of the HVHF amplifier alone. Hence, the proposed scheme is a promising method for stabilizing the bias voltage of an HVHF amplifier, and improving the echo-signal quality of VHF transducers.
Bias-Voltage Stabilizer for HVHF Amplifiers in VHF Pulse-Echo Measurement Systems
Choi, Hojong; Park, Chulwoo; Kim, Jungsuk; Jung, Hayong
2017-01-01
The impact of high-voltage–high-frequency (HVHF) amplifiers on echo-signal quality is greater with very-high-frequency (VHF, ≥100 MHz) ultrasound transducers than with low-frequency (LF, ≤15 MHz) ultrasound transducers. Hence, the bias voltage of an HVHF amplifier must be stabilized to ensure stable echo-signal amplitudes. We propose a bias-voltage stabilizer circuit to maintain stable DC voltages over a wide input range, thus reducing the harmonic-distortion components of the echo signals in VHF pulse-echo measurement systems. To confirm the feasibility of the bias-voltage stabilizer, we measured and compared the deviations in the gain of the HVHF amplifier with and without a bias-voltage stabilizer. Between −13 and 26 dBm, the measured gain deviations of a HVHF amplifier with a bias-voltage stabilizer are less than that of an amplifier without a bias-voltage stabilizer. In order to confirm the feasibility of the bias-voltage stabilizer, we compared the pulse-echo responses of the amplifiers, which are typically used for the evaluation of transducers or electronic components used in pulse-echo measurement systems. From the responses, we observed that the amplitudes of the echo signals of a VHF transducer triggered by the HVHF amplifier with a bias-voltage stabilizer were higher than those of the transducer triggered by the HVHF amplifier alone. The second, third, and fourth harmonic-distortion components of the HVHF amplifier with the bias-voltage stabilizer were also lower than those of the HVHF amplifier alone. Hence, the proposed scheme is a promising method for stabilizing the bias voltage of an HVHF amplifier, and improving the echo-signal quality of VHF transducers. PMID:29065526
Meyerhofer, David D.; Schmid, Ansgar W.; Chuang, Yung-ho
1992-01-01
Ultra short (pico second and shorter) laser pulses having components of different frequency which are overlapped coherently in space and with a predetermined constant relationship in time, are generated and may be used in applications where plural spectrally separate, time-synchronized pulses are needed as in wave-length resolved spectroscopy and spectral pump probe measurements for characterization of materials. A Chirped Pulse Amplifier (CPA), such as a regenerative amplifier, which provides amplified, high intensity pulses at the output thereof which have the same spatial intensity profile, is used to process a series of chirped pulses, each with a different central frequency (the desired frequencies contained in the output pulses). Each series of chirped pulses is obtained from a single chirped pulse by spectral windowing with a mask in a dispersive expansion stage ahead of the laser amplifier. The laser amplifier amplifies the pulses and provides output pulses with like spatial and temporal profiles. A compression stage then compresses the amplified pulses. All the individual pulses of different frequency, which originated in each single chirped pulse, are compressed and thereby coherently overlapped in space and time. The compressed pulses may be used for the foregoing purposes and other purposes wherien pulses having a plurality of discrete frequency components are required.
Meyerhofer, D.D.; Schmid, A.W.; Chuang, Y.
1992-03-10
Ultrashort (pico second and shorter) laser pulses having components of different frequency which are overlapped coherently in space and with a predetermined constant relationship in time, are generated and may be used in applications where plural spectrally separate, time-synchronized pulses are needed as in wave-length resolved spectroscopy and spectral pump probe measurements for characterization of materials. A Chirped Pulse Amplifier (CPA), such as a regenerative amplifier, which provides amplified, high intensity pulses at the output thereof which have the same spatial intensity profile, is used to process a series of chirped pulses, each with a different central frequency (the desired frequencies contained in the output pulses). Each series of chirped pulses is obtained from a single chirped pulse by spectral windowing with a mask in a dispersive expansion stage ahead of the laser amplifier. The laser amplifier amplifies the pulses and provides output pulses with like spatial and temporal profiles. A compression stage then compresses the amplified pulses. All the individual pulses of different frequency, which originated in each single chirped pulse, are compressed and thereby coherently overlapped in space and time. The compressed pulses may be used for the foregoing purposes and other purposes wherien pulses having a plurality of discrete frequency components are required. 4 figs.
Huang, Xiwei; Cheong, Jia Hao; Cha, Hyouk-Kyu; Yu, Hongbin; Je, Minkyu; Yu, Hao
2013-01-01
One transimpedance amplifier based CMOS analog front-end (AFE) receiver is integrated with capacitive micromachined ultrasound transducers (CMUTs) towards high frequency 3D ultrasound imaging. Considering device specifications from CMUTs, the TIA is designed to amplify received signals from 17.5MHz to 52.5MHz with center frequency at 35MHz; and is fabricated in Global Foundry 0.18-µm 30-V high-voltage (HV) Bipolar/CMOS/DMOS (BCD) process. The measurement results show that the TIA with power-supply 6V can reach transimpedance gain of 61dBΩ and operating frequency from 17.5MHz to 100MHz. The measured input referred noise is 27.5pA/√Hz. Acoustic pulse-echo testing is conducted to demonstrate the receiving functionality of the designed 3D ultrasound imaging system.
Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas
NASA Astrophysics Data System (ADS)
Vendik, O. G.; Vendik, I. B.; Tural'chuk, P. A.; Parnes, Ya. M.; Parnes, M. D.
2016-11-01
A technique for synthesis of microwave power amplifiers based on transistors with a AlGaN/GaN heterojunction is discussed. Special focus is on the development of a technique for synthesis of transformation circuits of the power amplifier to increase efficiency with a retained high output power. The use of independent matching at the harmonic frequencies and fundamental frequency makes it possible to control the attainable efficiency in a wide frequency band along with the total suppression of harmonics beyond the operational band. Microwave power amplifiers for operation at 4 and 9 GHz have been developed and experimentally investigated.
Analysis of multiple time scales in a transistor amplifier.
Armstead, Douglas N; Carroll, Thomas L
2005-03-01
It was shown previously in an experiment that when high frequency signals (on the order of 1 MHz) were injected into this low frequency amplifier, the nonlinearities of the pn junctions caused period doubling, chaos, and very low frequency oscillations (on the order of 1 Hz). In this paper we present theory and simulations to explain the existence of the low frequency oscillations.
Method for ambiguity resolution in range-Doppler measurements
NASA Technical Reports Server (NTRS)
Heymsfield, Gerald M. (Inventor); Miller, Lee S. (Inventor)
1994-01-01
A method for resolving range and Doppler target ambiguities when the target has substantial range or has a high relative velocity in which a first signal is generated and a second signal is also generated which is coherent with the first signal but at a slightly different frequency such that there exists a difference in frequency between these two signals of Delta f(sub t). The first and second signals are converted into a dual-frequency pulsed signal, amplified, and the dual-frequency pulsed signal is transmitted towards a target. A reflected dual-frequency signal is received from the target, amplified, and changed to an intermediate dual-frequency signal. The intermediate dual-frequency signal is amplified, with extracting of a shifted difference frequency Delta f(sub r) from the amplified intermediate dual-frequency signal done by a nonlinear detector. The final step is generating two quadrature signals from the difference frequency Delta f(sub t) and the shifted difference frequency Delta f(sub r) and processing the two quadrature signals to determine range and Doppler information of the target.
THz instrumentation for the Herschel Space Observatory's heterodyne instrument for far infrared
NASA Astrophysics Data System (ADS)
Pearson, John C.; Mehdi, Imran; Ward, John S.; Maiwald, Frank W.; Ferber, Robert R.; LeDuc, Henry G.; Schlecht, Erich T.; Gill, John J.; Hatch, William A.; Kawamura, Jonathan H.; Stern, Jeffrey A.; Gaier, Todd C.; Samoska, Lorene A.; Weinreb, Sander; Bumble, Bruce; Pukala, David M.; Javadi, Hamid H.; Finamore, Bradley P.; Lin, Robert H.; Dengler, Robert J.; Velebir, James R.; Luong, Edward M.; Tsang, Raymond; Peralta, Alejandro; Wells, Mary; Chun, William; Zmuidzinas, Jonas; Karpov, Alexandre; Phillips, Thomas; Miller, David; Maestrini, Alain E.; Erickson, Neal; Swift, Gerald; Liao, K. T.; Paquette, Michael
2004-10-01
The Heterodyne Instrument for Far Infrared (HIFI) on ESA's Herschel Space Observatory utilizes a variety of novel RF components in its five SIS receiver channels covering 480- 1250 GHz and two HEB receiver channels covering 1410-1910 GHz. The local oscillator unit will be passively cooled while the focal plane unit is cooled by superfluid helium and cold helium vapors. HIFI employs W-band GaAs amplifiers, InP HEMT low noise IF amplifiers, fixed tuned broadband planar diode multipliers, high power W-band Isolators, and novel material systems in the SIS mixers. The National Aeronautics and Space Administration through the Jet Propulsion Laboratory is managing the development of the highest frequency (1119-1250 GHz) SIS mixers, the local oscillators for the three highest frequency receivers as well as W-band power amplifiers, high power W-band isolators, varactor diode devices for all high frequency multipliers and InP HEMT components for all the receiver channels intermediate frequency amplifiers. The NASA developed components represent a significant advancement in the available performance. This paper presents an update of the performance and the current state of development.
THz Instrumentation for the Herschel Space Observatory's Heterodyne Instrument for Far Infrared
NASA Technical Reports Server (NTRS)
Pearson, J. C.; Mehdi, I.; Ward, J. S.; Maiwald, F.; Ferber, R. R.; Leduc, H. G.; Schlecht, E. T.; Gill, J. J.; Hatch, W. A.; Kawamura, J. H.;
2004-01-01
The Heterodyne Instrument for Far Infrared (HIFI) on ESA's Herschel Space Observatory utilizes a variety of novel RF components in its five SIS receiver channels covering 480-1250 GHz and two HEB receiver channels covering 1410-1910 GHz. The local oscillator unit will be passively cooled while the focal plane unit is cooled by superfluid helium and cold helium vapors. HIFI employs W-band GaAs amplifiers, InP HEMT low noise IF amplifiers, fixed tuned broadband planar diode multipliers, high power W-bapd Isolators, and novel material systems in the SIS mixers. The National Aeronautics and Space Administration through the Jet Propulsion Laboratory is managing the development of the highest frequency (1119-1250 GHz) SIS mixers, the local oscillators oscillators for the three highest frequency receivers as well as W-band power amplifiers, high power W-band isolators, varactor diode devices for all high frequency multipliers and InP HEMT components for all the receiver channels intermediate frequency amplifiers. The NASA developed components represent a significant advancement in the available performance. This paper presents an update of the performance and the current state of development.
High-Performance Solid-State W-Band Power Amplifiers
NASA Technical Reports Server (NTRS)
Gaier, Todd; Samoska, Lorene; Wells, Mary; Ferber, Robert; Pearson, John; Campbell, April; Peralta, Alejandro; Swift, Gerald; Yocum, Paul; Chung, Yun
2003-01-01
The figure shows one of four solid-state power amplifiers, each capable of generating an output power greater than or equal to 240 mW over one of four overlapping frequency bands from 71 to 106 GHz. (The bands are 71 to 84, 80 to 92, 88 to 99, and 89 to 106 GHz.) The amplifiers are designed for optimum performance at a temperature of 130 K. These amplifiers were developed specifically for incorporation into frequency-multiplier chains in local oscillators in a low-noise, far-infrared receiving instrument to be launched into outer space to make astrophysical observations. The designs of these amplifiers may also be of interest to designers and manufacturers of terrestrial W-band communication and radar systems. Each amplifier includes a set of six high-electron-mobility transistor (HEMT) GaAs monolithic microwave integrated-circuit (MMIC) chips, microstrip cavities, and other components packaged in a housing made from A-40 silicon-aluminum alloy. This alloy was chosen because, for the original intended spacecraft application, it offers an acceptable compromise among the partially competing requirements for high thermal conductivity, low mass, and low thermal expansion. Problems that were solved in designing the amplifiers included designing connectors and packages to fit the available space; designing microstrip signal-power splitters and combiners; matching of impedances across the frequency bands; matching of the electrical characteristics of those chips installed in parallel power-combining arms; control and levelling of output power across the bands; and designing the MMICs, microstrips, and microstrip cavities to suppress tendencies toward oscillation in several modes, both inside and outside the desired frequency bands.
NASA Astrophysics Data System (ADS)
Bu, Zhenxiang; Lin, Siying; Huang, Xiang; Li, Anlin; Wu, Dezhi; Zhao, Yang; Luo, Zhiwei; Wang, Lingyun
2018-07-01
This paper presents a new jetting dispenser which is applicable to high-frequency microelectronic packaging. In order to achieve high frequency glue jetting and improve the stability of jetting dispensers, we redesign a novel displacement amplifying mechanism, and a new on–off valve jetting dispenser driven by piezoelectric actuators is developed. Firstly, the core part of this jetting dispenser—the displacement amplifying mechanism with a corner-filleted flexure hinge—is proposed and a comparison with the previous structure is carried out; then the characteristic dimensional parameters of the amplifying mechanism are determined by theoretical calculation and finite element analysis. Secondly, a prototype of the dispenser with the displacement amplifying mechanism is fabricated based on the determined parameters. We use a laser displacement sensor to test the displacement of the needle, and a maximum amplifying displacement output of 367 µm is obtained under an applied 200 V to the piezoelectric actuator, which is consistent with the simulation result and meets the requirement of high displacement output. Thirdly, we build an integrated testing system. Mixed glycerol/ethanol is chosen as the experimental dispensing glue, and the experiment and analysis of a droplet diameter are conducted. A higher jetting frequency of 400 Hz and a smaller droplet diameter of 525 µm are achieved with the glycerol/ethanol mixture, and the characteristics of consistency and temperature influencing the droplet diameter are verified by experiments.
Generation of 180 W average green power from a frequency-doubled picosecond rod fiber amplifier
Zhao, Zhi; Sheehy, Brian; Minty, Michiko
2017-03-29
Here, we report on the generation of 180 W average green power from a frequency-doubled picosecond rod fiber amplifier. In an Yb-doped fiber master-oscillator-power-amplifier system, 2.3-ps 704 MHz pulses are first amplified in small-core fibers and then in large-mode-area rod fibers to produce 270 W average infrared power with a high polarization extinction ratio and diffraction-limited beam quality. By carrying out frequency doubling in a lithium triborate (LBO) crystal, 180 W average green power is generated. To the best of our knowledge, this is the highest average green power achieved in fiber-based laser systems.
Korolev, A M; Shnyrkov, V I; Shulga, V M
2011-01-01
We have presented theory and experimentally demonstrated an efficient method for drastically reducing the power consumption of the rf/microwave amplifiers based on HEMT in unsaturated dc regime. Conceptual one-stage 10 dB-gain amplifier showed submicrowatt level of the power consumption (0.95 μW at frequency of 0.5 GHz) when cooled down to 300 mK. Proposed technique has a great potential to design the readout amplifiers for ultra-deep-cooled cryoelectronic quantum devices.
NASA Astrophysics Data System (ADS)
Liu, Yakun; Su, Rongtao; Wang, Xiaolin; Ma, Pengfei; Zhang, Hanwei; Si, Lei
2017-10-01
In this manuscript, we demonstrate an all-fiberized, single-frequency and polarization-maintained (PM) amplifiers with wavelength tuned from 1065 nm to 1090 nm. The ASE is suppressed by a signal to noise ratio of higher than 27 dB, and each wavelengths can be amplified to be 250 W output power. The stimulated Brillouin scattering (SBS) effect in such high power amplifiers is suppressed by employing a high dopant fiber (10 dB/m). The polarization extinction ratio (PER) of the amplifier is over 20 dB at the maximum output power. It should be noted that although the experiments are conducted at the wavelength from 1065 nm to 1090 nm with a step of 5 nm, the wavelength can also be continuously tuned.
Broadband Characterization of a 100 to 180 GHz Amplifier
NASA Technical Reports Server (NTRS)
Kangaslahti, Pekka; Deal, W. R.; Mei, X. B.; Lai, R.
2007-01-01
Atmospheric science and weather forecasting require measurements of the temperature and humidity vs. altitude. These sounding measurements are obtained at frequencies close to the resonance frequencies of oxygen (118 GHz) and water (183 GHz) molecules. We have characterized a broadband amplifier that will increase the sensitivity of sounding and other instruments at these frequencies. This study demonstrated for the first t1me continuous low noise amplification from 100 to 180 GHz. The measured InP monolithic millimeter-wave Integrated circuit (MMIC) amplifier had more than 18 dB of gain from 100 to 180 GHz and 15 dB of gain up to 220 GHz. This is the widest bandwidth low noise amplifier result at these frequencies to date. The circuit was fabricated in Northrop Grumman Corporation 35 nm InP high electron mobility transistor (HEMT).
Development of Cryogenic Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor Amplifier
NASA Astrophysics Data System (ADS)
Hirata, T.; Okazaki, T.; Obara, K.; Yano, H.; Ishikawa, O.
2017-06-01
This paper reports the technical details of the development of a low-temperature amplifier for nuclear magnetic resonance measurements of superfluid {}^3He in very confined geometries. The amplifier consists of commercially available enhancement-mode pseudomorphic high-electron-mobility transistor devices and temperature-insensitive passive components with an operating frequency range of 0.2-6 MHz.
NASA Astrophysics Data System (ADS)
Park, Chang-In; Jeon, Su-Jin; Hong, Nam-Pyo; Choi, Young-Wan
2016-03-01
Lock-in amplifier (LIA) has been proposed as a detection technique for optical sensors because it can measure low signal in high noise level. LIA uses synchronous method, so the input signal frequency is locked to a reference frequency that is used to carry out the measurements. Generally, input signal frequency of LIA used in optical sensors is determined by modulation frequency of optical signal. It is important to understand the noise characteristics of the trans-impedance amplifier (TIA) to determine the modulation frequency. The TIA has a frequency range in which noise is minimized by the capacitance of photo diode (PD) and the passive component of TIA feedback network. When the modulation frequency is determined in this range, it is possible to design a robust system to noise. In this paper, we propose a method for the determination of optical signal modulation frequency selection by using the noise characteristics of TIA. Frequency response of noise in TIA is measured by spectrum analyzer and minimum noise region is confirmed. The LIA and TIA circuit have been designed as a hybrid circuit. The optical sensor is modeled by the laser diode (LD) and photo diode (PD) and the modulation frequency was used as the input to the signal generator. The experiments were performed to compare the signal to noise ratio (SNR) of the minimum noise region and the others. The results clearly show that the SNR is enhanced in the minimum noise region of TIA.
NASA Astrophysics Data System (ADS)
Bai, Xianchen; Yang, Jianhua; Zhang, Jiande
2012-08-01
By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.
2006-04-15
was amplified by injection locking of a high power diode laser and further amplified to -300 mW with a semiconductor optical amplifier. This light...amplifiers at 793nm, cascaded injection locked amplifiers at 793nm, and frequency chirped lasers at 793nm. 15. SUBJECT TERMS Optical Coherent Transients...injection- locking for broadband optical signal amplification ................. 34 2.10. Tapered semiconductor optical amplifier
DOE Office of Scientific and Technical Information (OSTI.GOV)
Gold, Steven H.; Fliflet, Arne W.
2001-08-25
This is the final report on the research program ''Development of a Thermionic Magnicon Amplifier at 11.4 GHz,'' which was carried out by the Plasma Physics Division of the Naval Research Laboratory. Its goal was to develop a high-power, frequency-doubling X-band magnicon amplifier, an advanced scanning-beam amplifier, for use in future linear colliders. The final design parameters were 61 MW at 11.424 GHz, 59 dB gain, 59% efficiency, 1 microsecond pulselength and 10 Hz repetition rate. At the conclusion of this program, the magnicon was undergoing high-power conditioning, having already demonstrated high-power operation, phase stability, a linear drive curve, amore » small operational frequency bandwidth and a spectrally pure, single-mode output.« less
Jovanovic, Igor; Comaskey, Brian J.
2004-09-14
A first pump pulse and a signal pulse are injected into a first optical parametric amplifier. This produces a first amplified signal pulse. At least one additional pump pulse and the first amplified signal pulse are injected into at least one additional optical parametric amplifier producing an increased power coherent optical pulse.
Operational amplifier with adjustable frequency response.
Gulisek, D; Hencek, M
1978-01-01
The authors describe an operational amplifier with an adjustable frequency response and its use in membrane physiology, using the voltage clamp and current clamp method. The amplifier eliminates feedback poles causing oscillation. It consists of a follower with a high input resistance in the form of a tube and of an actual amplifier with an adjustable frequency response allowing the abolition of clicks by one pole and of oscillation by two poles in the 500 Hz divided by infinity range. Further properties of the amplifier: a long-term voltage drift of 1 mv, a temperature voltage drift of 0.5 mv/degrees K, input resistance greater than 1 GOhm, amplification greater than 80 dB, output +/- 12 v, 25 ma, noise, measured from the width of the oscilloscope track in the presence of a ray of normal brightness, not exceeding 50 muv in the 0-250 kHz band, f1 = 1 MHz. A short report on the amplifier was published a few years ago (Gulísek and Hencek 1973).
High-frequency graphene voltage amplifier.
Han, Shu-Jen; Jenkins, Keith A; Valdes Garcia, Alberto; Franklin, Aaron D; Bol, Ageeth A; Haensch, Wilfried
2011-09-14
While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate design with gate length of 500 nm. The graphene common-source amplifier exhibits ∼5 dB low frequency gain with the 3 dB bandwidth greater than 6 GHz. This first AC voltage gain demonstration of a GFET is attributed to the clear current saturation in the device, which is enabled by an ultrathin gate dielectric (4 nm HfO(2)) of the embedded gate structures. The device also shows extrinsic transconductance of 1.2 mS/μm at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date.
Sautto, Marco; Savoia, Alessandro Stuart; Quaglia, Fabio; Caliano, Giosue; Mazzanti, Andrea
2017-05-01
A formal comparison between fundamental RX amplifier configurations for capacitive micromachined ultrasonic transducers (CMUTs) is proposed in this paper. The impact on both RX and the pulse-echo frequency response and on the output SNR is thoroughly analyzed and discussed. It is shown that the resistive-feedback amplifier yields a bandpass RX frequency response, while both open-loop voltage and capacitive-feedback amplifiers exhibit a low-pass frequency response. For a given power dissipation, it is formally proved that a capacitive-feedback amplifier provides a remarkable SNR improvement against the commonly adopted resistive feedback stage, achieved at the expense of a reduced pulse-echo center frequency, making its use convenient in low-frequency and midfrequency ultrasound imaging applications. The advantage mostly comes from a much lower noise contributed by the active devices, especially with low- Q , broadband transducers. The results of the analysis are applied to the design of a CMUT front end in BIPOLAR-CMOS-DMOS Silicon-on-Insulator technology operating at 10-MHz center frequency. It comprises a low-power RX amplifier, a high-voltage Transmission/Reception switch, and a 100-V TX driver. Extensive electrical characterization, pulse-echo measurements, and imaging results are shown. Compared with previously reported CMUT front ends, this transceiver demonstrates the highest dynamic range and state-of-the-art noise performance with an RX amplifier power dissipation of 1 mW.
Modulation characteristics of a high-power semiconductor Master Oscillator Power Amplifier (MOPA)
NASA Technical Reports Server (NTRS)
Cornwell, Donald Mitchell, Jr.
1992-01-01
A semiconductor master oscillator-power amplifier was demonstrated using an anti-reflection (AR) coated broad area laser as the amplifier. Under CW operation, diffraction-limited single-longitudinal-mode powers up to 340 mW were demonstrated. The characteristics of the far-field pattern were measured and compared to a two-dimensional reflective Fabry-Perot amplifier model of the device. The MOPA configuration was modulated by the master oscillator. Prior to injection into the amplifier, the amplitude and frequency modulation properties of the master oscillator were characterized. The frequency response of the MOPA configuration was characterized for an AM/FM modulated injection beam, and was found to be a function of the frequency detuning between the master oscillator and the resonant amplifier. A shift in the phase was also observed as a function of frequency detuning; this phase shift is attributed to the optical phase shift imparted to a wave reflected from a Fabry-Perot cavity. Square-wave optical pulses were generated at 10 MHz and 250 MHz with diffraction-limited peak powers of 200 mW and 250 mW. The peak power for a given modulation frequency is found to be limited by the injected power and the FM modulation at that frequency. The modulation results make the MOPA attractive for use as a transmitter source in applications such as free-space communications and ranging/altimetry.
A high efficiency C-band internally-matched harmonic tuning GaN power amplifier
NASA Astrophysics Data System (ADS)
Lu, Y.; Zhao, B. C.; Zheng, J. X.; Zhang, H. S.; Zheng, X. F.; Ma, X. H.; Hao, Y.; Ma, P. J.
2016-09-01
In this paper, a high efficiency C-band gallium nitride (GaN) internally-matched power amplifier (PA) is presented. This amplifier consists of 2-chips of self-developed GaN high-electron mobility transistors (HEMTs) with 16 mm total gate width on SiC substrate. New harmonic manipulation circuits are induced both in the input and output matching networks for high efficiency matching at fundamental and 2nd-harmonic frequency, respectively. The developed amplifier has achieved 72.1% power added efficiency (PAE) with 107.4 W output power at 5 GHz. To the best of our knowledge, this amplifier exhibits the highest PAE in C-band GaN HEMT amplifiers with over 100 W output power. Additionally, 1000 hours' aging test reveals high reliability for practical applications.
Cryogenic Amplifier Based Receivers at Submillimeter Wavelengths
NASA Technical Reports Server (NTRS)
Chattopadhyay, Goutam; Reck, Theodore and; Schlecht, Erich; Lin, Robert; Deal, William
2012-01-01
The operating frequency of InP high electron mobility transistor (HEMT) based amplifiers has moved well in the submillimeter-wave frequencies over the last couple of years. Working amplifiers with usable gain in waveguide packages has been reported beyond 700 GHz. When cooled cryogenically, they have shown substantial improvement in their noise temperature. This has opened up the real possibility of cryogenic amplifier based heterodyne receivers at submillimeter wavelengths for ground-based, air-borne, and space-based instruments for astrophysics, planetary, and Earth science applications. This paper provides an overview of the science applications at submillimeter wavelengths that will benefit from this technology. It also describes the current state of the InP HEMT based cryogenic amplifier receivers at submillimeter wavelengths.
Update on Waveguide-Embedded Differential MMIC Amplifiers
NASA Technical Reports Server (NTRS)
Kangaslahti, Pekka; Schleht, Erich
2010-01-01
There is an update on the subject matter of Differential InP HEMT MMIC Amplifiers Embedded in Waveguides (NPO-42857) NASA Tech Briefs, Vol. 33, No. 9 (September 2009), page 35. To recapitulate: Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The MMICs are designed integrally with, and embedded in, waveguide packages. The instant work does not mention InP HEMTs but otherwise reiterates part of the subject matter of the cited prior article, with emphasis on the following salient points: An MMIC is mounted in the electric-field plane ("E-plane") of a waveguide and includes a finline transition to each differential-amplifier stage. The differential configuration creates a virtual ground within each pair of transistor-gate fingers, eliminating the need for external radio-frequency grounding. This work concludes by describing a single-stage differential submillimeter-wave amplifier packaged in a rectangular waveguide and summarizing results of tests of this amplifier at frequencies of 220 and 305 GHz.
MMIC Amplifier Produces Gain of 10 dB at 235 GHz
NASA Technical Reports Server (NTRS)
Dawson, Douglas; Fung, King Man; Lee, Karen; Samoska, Lorene; Wells, Mary; Gaier, Todd; Kangaslahti, Pekka; Grundbacher, Ronald; Lai, Richard; Raja, Rohit;
2007-01-01
The first solid-state amplifier capable of producing gain at a frequency >215 GHz has been demonstrated. This amplifier was fabricated as a monolithic microwave integrated-circuit (MMIC) chip containing InP high-electron-mobility transistors (HEMTs) of 0.07 micron gate length on a 50- m-thick InP substrate.
Guo, Liang; Monahan, Daniele M; Fleming, Graham
2016-08-08
Spectrometers and cameras are used in ultrafast spectroscopy to achieve high resolution in both time and frequency domains. Frequency-resolved signals from the camera pixels cannot be processed by common lock-in amplifiers, which have only a limited number of input channels. Here we demonstrate a rapid and economical method that achieves the function of a lock-in amplifier using mechanical choppers and a programmable microcontroller. We demonstrate the method's effectiveness by performing a frequency-resolved pump-probe measurement on the dye Nile Blue in solution.
Compact, Single-Stage MMIC InP HEMT Amplifier
NASA Technical Reports Server (NTRS)
Pukala, David; Samoska, Lorene; Fung, King Man; Gaier, Todd; Deal, W. R.; Mei, Gerry; Radisic, Vesna; Lai, Richard
2008-01-01
A monolithic micro - wave integrated-circuit (MMIC) singlestage amplifier containing an InP-based high-electron-mobility transistor (HEMT) plus coplanar-waveguide (CPW) transmission lines for impedance matching and input and output coupling, all in a highly miniaturized layout as needed for high performance at operating frequencies of hundreds of gigahertz is described.
NASA Astrophysics Data System (ADS)
Peng, ZhiGang; Chen, Meng; Yang, Chao; Chang, Liang; Li, Gang
2015-02-01
We report a high-energy, high-repetition CW pumped Nd:YVO4 amplifier system, that produces 10.5 W, 14.2 ps pulses at 1064 nm wavelength and 5 W pulses at 532 nm wavelength with a repetition rate of 10 kHz. Pulses from a passively mode-locked Nd:YVO4 oscillator are first generated by cavity dumping, and then further amplified in a regenerative amplifier from 545 nJ to 1 mJ with a CW diode-pumped Nd:YVO4. After frequency doubling, 0.5 mJ pulses are obtained with a wavelength of 532 nm.
High-Efficiency Microwave Power Amplifier
NASA Technical Reports Server (NTRS)
Sims, Williams H.
2005-01-01
A high-efficiency power amplifier that operates in the S band (frequencies of the order of a few gigahertz) utilizes transistors operating under class-D bias and excitation conditions. Class-D operation has been utilized at lower frequencies, but, until now, has not been exploited in the S band. Nominally, in class D operation, a transistor is switched rapidly between "on" and "off" states so that at any given instant, it sustains either high current or high voltage, but not both at the same time. In the ideal case of zero "on" resistance, infinite "off" resistance, zero inductance and capacitance, and perfect switching, the output signal would be a perfect square wave. Relative to the traditional classes A, B, and C of amplifier operation, class D offers the potential to achieve greater power efficiency. In addition, relative to class-A amplifiers, class-D amplifiers are less likely to go into oscillation. In order to design this amplifier, it was necessary to derive mathematical models of microwave power transistors for incorporation into a larger mathematical model for computational simulation of the operation of a class-D microwave amplifier. The design incorporates state-of-the-art switching techniques applicable only in the microwave frequency range. Another major novel feature is a transmission-line power splitter/combiner designed with the help of phasing techniques to enable an approximation of a square-wave signal (which is inherently a wideband signal) to propagate through what would, if designed in a more traditional manner, behave as a more severely band-limited device (see figure). The amplifier includes an input, a driver, and a final stage. Each stage contains a pair of GaAs-based field-effect transistors biased in class D. The input signal can range from -10 to +10 dBm into a 50-ohm load. The table summarizes the performances of the three stages
Diode-pumped large-aperture Nd:YAG slab amplifier for high energy nanosecond pulse laser
NASA Astrophysics Data System (ADS)
Guo, Guangyan; Chen, Yanzhong; He, Jianguo; Lang, Ye; Lin, Weiran; Tang, Xiongxin; Zhang, Hongbo; Kang, Zhijun; Fan, Zhongwei
2017-10-01
A high gain, low thermal-induced wavefront distortion, laser diode-pumped Nd: YAG slab amplifier is demonstrated with its active media dimensions of 7 mm ×35 mm ×138.2 mm. Under the 200 Hz, 1440 W pulse pumping condition while no seed light to amplify, the thermal induced wavefront aberration of a He-Ne probe passing through the gain meUdium is 0.165 λ@633 nm (RMS). The amplifier shows stable aberration character with two major low-order terms, defocus and 0° astigmatism. The fluorescence distribution, stored energy, and small-signal gain of the amplifier are measured and have a good agreement with the calculated results. In the amplifier, the fluorescence is uniformly distributed and the maximum stored energy of 3.2 J can be achieved with a plane-concave cavity at 200 Hz pump repetition frequency. For a repetition frequency of 200 Hz, 25 μJ injection polarized seed-light and 1440 W pump power, the small signal gain reaches 9.45. The amplifier has been successfully employed in a 200 Hz, 5 J, MOPA system with 1.7 times diffraction limited output.
Beutler, Marcus; Ghotbi, Masood; Noack, Frank; Brida, Daniele; Manzoni, Cristian; Cerullo, Giulio
2009-03-15
We report on the generation of powerful sub-20 fs deep UV pulses with 10 microJ level energy and broadly tunable in the 250-310 nm range. These pulses are produced by frequency doubling a high-power noncollinear optical parametric amplifier and compressed by a pair of MgF2 prisms to an almost transform-limited duration. Our results provide a power scaling by an order of magnitude with respect to previous works.
A Q-band low noise GaAs pHEMT MMIC power amplifier for pulse electron spin resonance spectrometer
NASA Astrophysics Data System (ADS)
Sitnikov, A.; Kalabukhova, E.; Oliynyk, V.; Kolisnichenko, M.
2017-05-01
We present the design and development of a single stage pulse power amplifier working in the frequency range 32-38 GHz based on a monolithic microwave integrated circuit (MMIC). We have designed the MMIC power amplifier by using the commercially available packaged GaAs pseudomorphic high electron mobility transistor. The circuit fabrication and assembly process includes the elaboration of the matching networks for the MMIC power amplifier and their assembling as well as the topology outline and fabrication of the printed circuit board of the waveguide-microstrip line transitions. At room ambient temperature, the measured peak output power from the prototype amplifier is 35.5 dBm for 16.6 dBm input driving power, corresponding to 19 dB gain. The measured rise/fall time of the output microwave signal modulated by a high-speed PIN diode was obtained as 5-6 ns at 20-250 ns pulse width with 100 kHz pulse repetition rate frequency.
A Q-band low noise GaAs pHEMT MMIC power amplifier for pulse electron spin resonance spectrometer.
Sitnikov, A; Kalabukhova, E; Oliynyk, V; Kolisnichenko, M
2017-05-01
We present the design and development of a single stage pulse power amplifier working in the frequency range 32-38 GHz based on a monolithic microwave integrated circuit (MMIC). We have designed the MMIC power amplifier by using the commercially available packaged GaAs pseudomorphic high electron mobility transistor. The circuit fabrication and assembly process includes the elaboration of the matching networks for the MMIC power amplifier and their assembling as well as the topology outline and fabrication of the printed circuit board of the waveguide-microstrip line transitions. At room ambient temperature, the measured peak output power from the prototype amplifier is 35.5 dBm for 16.6 dBm input driving power, corresponding to 19 dB gain. The measured rise/fall time of the output microwave signal modulated by a high-speed PIN diode was obtained as 5-6 ns at 20-250 ns pulse width with 100 kHz pulse repetition rate frequency.
NASA Astrophysics Data System (ADS)
Dolev, A.; Bucher, I.
2018-04-01
Mechanical or electromechanical amplifiers can exploit the high-Q and low noise features of mechanical resonance, in particular when parametric excitation is employed. Multi-frequency parametric excitation introduces tunability and is able to project weak input signals on a selected resonance. The present paper addresses multi degree of freedom mechanical amplifiers or resonators whose analysis and features require treatment of the spatial as well as temporal behavior. In some cases, virtual electronic coupling can alter the given topology of the resonator to better amplify specific inputs. An analytical development is followed by a numerical and experimental sensitivity and performance verifications, illustrating the advantages and disadvantages of such topologies.
Hornsby, Benjamin W. Y.; Johnson, Earl E.; Picou, Erin
2011-01-01
Objectives The purpose of this study was to examine the effects of degree and configuration of hearing loss on the use of, and benefit from, information in amplified high- and low-frequency speech presented in background noise. Design Sixty-two adults with a wide range of high- and low-frequency sensorineural hearing loss (5–115+ dB HL) participated. To examine the contribution of speech information in different frequency regions, speech understanding in noise was assessed in multiple low- and high-pass filter conditions, as well as a band-pass (713–3534 Hz) and wideband (143–8976 Hz) condition. To increase audibility over a wide frequency range, speech and noise were amplified based on each individual’s hearing loss. A stepwise multiple linear regression approach was used to examine the contribution of several factors to 1) absolute performance in each filter condition and 2) the change in performance with the addition of amplified high- and low-frequency speech components. Results Results from the regression analysis showed that degree of hearing loss was the strongest predictor of absolute performance for low- and high-pass filtered speech materials. In addition, configuration of hearing loss affected both absolute performance for severely low-pass filtered speech and benefit from extending high-frequency (3534–8976 Hz) bandwidth. Specifically, individuals with steeply sloping high-frequency losses made better use of low-pass filtered speech information than individuals with similar low-frequency thresholds but less high-frequency loss. In contrast, given similar high-frequency thresholds, individuals with flat hearing losses received more benefit from extending high-frequency bandwidth than individuals with more sloping losses. Conclusions Consistent with previous work, benefit from speech information in a given frequency region generally decreases as degree of hearing loss in that frequency region increases. However, given a similar degree of loss, the configuration of hearing loss also affects the ability to use speech information in different frequency regions. Except for individuals with steeply sloping high-frequency losses, providing high-frequency amplification (3534–8976 Hz) had either a beneficial effect on, or did not significantly degrade, speech understanding. These findings highlight the importance of extended high-frequency amplification for listeners with a wide range of high-frequency hearing losses, when seeking to maximize intelligibility. PMID:21336138
2010-09-10
photodiode with internal resistor followed by a high-gain RF amplifier , and c) a p-i-n photodiode followed by a transimpedance amplifier (TIA). We...gain, RF electrical amplifier ; and 3) a p-i-n photodiode followed by a transimpedance amplifier . Finally, we perform calculations to predict the...common photoreceiver is a p-i-n or avalanche photodiode with a built-in transimpedance amplifier (TIA) and often incorporating automatic gain control
Three MMIC Amplifiers for the 120-to-200 GHz Frequency Band
NASA Technical Reports Server (NTRS)
Samoska, Lorene; Schmitz, Adele
2009-01-01
Closely following the development reported in the immediately preceding article, three new monolithic microwave integrated circuit (MMIC) amplifiers that would operate in the 120-to-200-GHz frequency band have been designed and are under construction at this writing. The active devices in these amplifiers are InP high-electron-mobility transistors (HEMTs). These amplifiers (see figure) are denoted the LSLNA150, the LSA200, and the LSA185, respectively. Like the amplifiers reported in the immediately preceding article, the LSLNA150 (1) is intended to be a prototype of low-noise amplifiers (LNAs) to be incorporated into spaceborne instruments for sensing cosmic microwave background radiation and (2) has potential for terrestrial use in electronic test equipment, passive millimeter-wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The HEMTs in this amplifier were fabricated according to 0.08- m design rules of a commercial product line of InP HEMT MMICs at HRL Laboratories, LLC, with a gate geometry of 2 fingers, each 15 m wide. On the basis of computational simulations, this amplifier is designed to afford at least 15 dB of gain, with a noise figure of no more than about 6 dB, at frequencies from 120 to 160 GHz. The measured results of the amplifier are shown next to the chip photo, with a gain of 16 dB at 150 GHz. Noise figure work is ongoing. The LSA200 and the LSA185 are intended to be prototypes of transmitting power amplifiers for use at frequencies between about 180 and about 200 GHz. These amplifiers have also been fabricated according to rules of the aforesaid commercial product line of InP HEMT MMICs, except that the HEMTs in these amplifiers are characterized by a gate geometry of 4 fingers, each 37 m wide. The measured peak performance of the LSA200 is characterized by a gain of about 1.4 dB at a frequency of 190 GHz; the measured peak performance of the LSA185 is characterized by a gain of about 2.7 dB at a frequency of 181 GHz. The measured gain results of each chip are shown next to their respective photos.
Variable frequency microwave heating apparatus
Bible, Don W.; Lauf, Robert J.; Johnson, Arvid C.; Thigpen, Larry T.
1999-01-01
A variable frequency microwave heating apparatus (10) designed to allow modulation of the frequency of the microwaves introduced into a multi-mode microwave cavity (34) for testing or other selected applications. The variable frequency microwave heating apparatus (10) includes a microwave signal generator (12) and a high-power microwave amplifier (20) or a high-power microwave oscillator (14). A power supply (22) is provided for operation of the high-power microwave oscillator (14) or microwave amplifier (20). A directional coupler (24) is provided for detecting the direction and amplitude of signals incident upon and reflected from the microwave cavity (34). A first power meter (30) is provided for measuring the power delivered to the microwave furnace (32). A second power meter (26) detects the magnitude of reflected power. Reflected power is dissipated in the reflected power load (28).
NASA Technical Reports Server (NTRS)
Sanders, Steven (Inventor); Waarts, Robert G. (Inventor)
2001-01-01
A frequency conversion system comprises first and second gain sources providing first and second frequency radiation outputs where the second gain source receives as input the output of the first gain source and, further, the second gain source comprises a Raman or Brillouin gain fiber for wave shifting a portion of the radiation of the first frequency output into second frequency radiation output to provided a combined output of first and second frequencies. Powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.
Radio frequency analog electronics based on carbon nanotube transistors
Kocabas, Coskun; Kim, Hoon-sik; Banks, Tony; Rogers, John A.; Pesetski, Aaron A.; Baumgardner, James E.; Krishnaswamy, S. V.; Zhang, Hong
2008-01-01
The potential to exploit single-walled carbon nanotubes (SWNTs) in advanced electronics represents a continuing, major source of interest in these materials. However, scalable integration of SWNTs into circuits is challenging because of difficulties in controlling the geometries, spatial positions, and electronic properties of individual tubes. We have implemented solutions to some of these challenges to yield radio frequency (RF) SWNT analog electronic devices, such as narrow band amplifiers operating in the VHF frequency band with power gains as high as 14 dB. As a demonstration, we fabricated nanotube transistor radios, in which SWNT devices provide all of the key functions, including resonant antennas, fixed RF amplifiers, RF mixers, and audio amplifiers. These results represent important first steps to practical implementation of SWNTs in high-speed analog circuits. Comparison studies indicate certain performance advantages over silicon and capabilities that complement those in existing compound semiconductor technologies. PMID:18227509
NASA Astrophysics Data System (ADS)
Qi, Yaoyao; Yu, Haijuan; Zhang, Jingyuan; Zhang, Ling; He, Chaojian; Lin, Xuechun
2018-05-01
We demonstrated a high efficiency and high average power picosecond green light source based on SHG (second harmonic generation) of an unpolarized ytterbium-doped fiber amplifier chain. Using single-pass frequency doubling in two temperature-tuned type-I phase-matching LBO crystals, we were able to generate 46 W, >70 ps pulses at 532 nm from a fundamental beam at 1064 nm, whose output is 96 W, 4.8 μJ, with a repetition frequency of 20 MHz and nearly diffraction limited. The optical conversion efficiency was ∼48% in a highly compact design. To the best of our knowledge, this is the first reported on ps green source through SHG of an unpolarized fiber laser with such a high output and high efficiency.
InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz
NASA Technical Reports Server (NTRS)
Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard
2009-01-01
Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.
Note: A simple multi-channel optical system for modulation spectroscopies.
Solís-Macías, J; Sánchez-López, J D; Castro-García, R; Flores-Camacho, J M; Flores-Rangel, G; Ciou, Jian-Jhih; Chen, Kai-Wei; Chen, Chang-Hsiao; Lastras-Martínez, L F; Balderas-Navarro, R E
2017-12-01
Photoreflectance-difference (PR/PRD) and reflectance-difference (RD) spectroscopies employ synchronic detection usually with lock-in amplifiers operating at moderate (200-1000 Hz) and high (50-100 KHz) modulation frequencies, respectively. Here, we report a measurement system for these spectroscopies based on a multichannel CCD spectrometer without a lock-in amplifier. In the proposed scheme, a typical PRD or RD spectrum consists of numerical subtractions between a thousand CCD captures recorded, while a photoelastic modulator is either operating or inhibited. This is advantageous and fits the slow response of CCD detectors to high modulation frequencies. The resulting spectra are processed with Savitzky-Golay filtering and compared well with those measured with conventional scanning systems based on lock-in amplifiers.
THz frequency receiver instrumentation for Herschel's heterodyne instrument for far infrared (HIFI)
NASA Astrophysics Data System (ADS)
Pearson, John C.; Mehdi, Imran; Schlecht, Erich; Maiwald, Frank; Maestrini, Alain; Gill, John J.; Martin, Suzanne C.; Pukala, Dave; Ward, J.; Kawamura, Jonathan; McGrath, William R.; Hatch, William; Harding, Dennis G.; LeDuc, Henry G.; Stern, Jeffry A.; Bumble, Bruce; Samoska, Lorene A.; Gaier, Todd C.; Ferber, Robert; Miller, David; Karpov, Alexandre; Zmuidzinas, Jonas; Phillips, Thomas G.; Erickson, Neal R.; Swift, Jerry; Chung, Yun; Lai, Richard; Wang, Huei
2003-03-01
The Heterodyne Instrument for Far Infrared (HIFI) on ESA's Herschel Space Observatory is comprised of five SIS receiver channels covering 480-1250 GHz and two HEB receiver channels covering 1410-1910 GHz. Two fixed tuned local oscillator sub-bands are derived from a common synthesizer to provide the front-end frequency coverage for each channel. The local oscillator unti will be passively cooled while the focal plane unit is cooled by superfluid helium and cold helium vapors. HIFI employs W-band GaAs amplifiers, InP HEMT low noise IF amplifiers, fixed tuned broadband planar diode multipliers, and novel material systems in the SIS mixtures. The National Aeronautics and Space Administration's Jet Propulsion Laboratory is managing the development of the highest frequency (1119-1250 GHz) SIS mixers, the highest frequency (1650-1910 GHz) HEB mixers, local oscillators for the three highest frequency receivers as well as W-band power amplifiers, varactor diode devices for all high frequency multipliers and InP HEMT components for all the receiver channels intermediate frequency amplifiers. The NASA developed components represent a significant advancement in the available performance. The current state of the art for each of these devices is presented along with a programmatic view of the development effort.
Electronic stethoscope with frequency shaping and infrasonic recording capabilities.
Gordon, E S; Lagerwerff, J M
1976-03-01
A small electronic stethoscope with variable frequency response characteristics has been developed for aerospace and research applications. The system includes a specially designed piezoelectric pickup and amplifier with an overall frequency response from 0.7 to 5,000 HZ (-3 dB points) and selective bass and treble boost or cut of up to 15 dB. A steep slope, high pass filter can be switched in for ordinary clinical auscultation without overload distortion from strong infrasonic signal inputs. A commercial stethoscope-type headset, selected for best overall response, is used which can adequately handle up to 100 mW of audio power delivered from the amplifier. The active components of the amplifier consist of only four opamp-type integrated circuits.
2006-11-01
Chip Level CMOS Chip High resistivity Si Metal Interconnect 25μm 24GHz fully integrated receiver CMOS transimpedance Amplifier (13GHz BW, 52dBΩ...power of a high-resistivity SiGe power amplifier chip with the wide operating frequency range and compactness of a CMOS mixed signal chip operating...With good RF channel selectivity, system specifications such as the linearity of the low noise amplifier (LNA), the phase noise of the voltage
Crystal oscillators using negative voltage gain, single pole response amplifiers
NASA Technical Reports Server (NTRS)
Kleinberg, Leonard L. (Inventor)
1989-01-01
A simple and inexpensive crystal oscillator is provided which employs negative voltage gain, single pole response amplifiers. The amplifiers may include such configurations as gate inverters, operational amplifiers and conventional bipolar transistor amplifiers, all of which operate at a frequency which is on the roll-off portion of their gain versus frequency curve. Several amplifier feedback circuit variations are employed to set desired bias levels and to allow the oscillator to operate at the crystal's fundamental frequency or at an overtone of the fundamental frequency. The oscillator is made less expensive than comparable oscillators by employing relatively low frequency amplifiers and operating them at roll-off, at frequencies beyond which they are customarily used. Simplicity is provided because operation at roll-off eliminates components ordinarily required in similar circuits to provide sufficient phase-shift in the feedback circuitry for oscillation to occur.
Active cooling of an audio-frequency electrical resonator to microkelvin temperatures
NASA Astrophysics Data System (ADS)
Vinante, A.; Bonaldi, M.; Mezzena, R.; Falferi, P.
2010-11-01
We have cooled a macroscopic LC electrical resonator using feedback-cooling combined with an ultrasensitive dc Superconducting Quantum Interference Device (SQUID) current amplifier. The resonator, with resonance frequency of 11.5 kHz and bath temperature of 135 mK, is operated in the high coupling limit so that the SQUID back-action noise overcomes the intrinsic resonator thermal noise. The effect of correlations between the amplifier noise sources clearly show up in the experimental data, as well as the interplay of the amplifier noise with the resonator thermal noise. The lowest temperature achieved by feedback is 14 μK, corresponding to 26 resonator photons, and approaches the limit imposed by the noise energy of the SQUID amplifier.
NASA Technical Reports Server (NTRS)
Stevenson, Thomas; Aassime, Abdelhanin; Delsing, Per; Frunzio, Luigi; Li, Li-Qun; Prober, Daniel; Schoelkopf, Robert; Segall, Ken; Wilson, Chris; Stahle, Carl
2000-01-01
We report progress on using a new type of amplifier, the Radio-Frequency Single-Electron Transistor (RF-SET), to develop multi-channel sensor readout systems for fast and sensitive readout of high impedance cryogenic photodetectors such as Superconducting Tunnel Junctions and Single Quasiparticle Photon Counters. Although cryogenic, these detectors are desirable because of capabilities not other-wise attainable. However, high impedances and low output levels make low-noise, high-speed readouts challenging, and large format arrays would be facilitated by compact, low-power, on-chip integrated amplifiers. Well-suited for this application are RF-SETs, very high performance electrometers which use an rf readout technique to provide 100 MHz bandwidth. Small size, low power, and cryogenic operation allow direct integration with detectors, and using multiple rf carrier frequencies permits simultaneous readout of 20-50 amplifiers with a common electrical connection. We describe both the first 2-channel demonstration of this wavelength division multiplexing technique for RF-SETs, and Charge-Locked-Loop operation with 100 kHz of closed-loop bandwidth.
Radio astronomy ultra-low-noise amplifier for operation at 91 cm wavelength in high RFI environment
NASA Astrophysics Data System (ADS)
Korolev, A. M.; Zakharenko, V. V.; Ulyanov, O. M.
2016-02-01
An ultra-low-noise input amplifier intended for a use in a radio telescope operating at 91 cm wavelength is presented. The amplifier noise temperatures are 12.8 ± 1.5 and 10.0 ± 1.5 K at ambient temperatures of 293 and 263 K respectively. The amplifier does not require cryogenic cooling. It can be quickly put in operation thus shortening losses in the telescope observation time. High linearity of the amplifier (output power at 1 dB gain compression P1dB ≥ 22 dBm, output third order intercept point OIP3 ≥ 37 dBm) enables the telescope operation in highly urbanized and industrialized regions. To obtain low noise characteristics along with high linearity, high-electron-mobility field-effect transistors were used in parallel in the circuit developed. The transistors used in the amplifier are cost-effective and commercially available. The circuit solution is recommended for similar devices working in ultra-high frequency band.
Heinz, M G; Colburn, H S; Carney, L H
2001-10-01
The perceptual significance of the cochlear amplifier was evaluated by predicting level-discrimination performance based on stochastic auditory-nerve (AN) activity. Performance was calculated for three models of processing: the optimal all-information processor (based on discharge times), the optimal rate-place processor (based on discharge counts), and a monaural coincidence-based processor that uses a non-optimal combination of rate and temporal information. An analytical AN model included compressive magnitude and level-dependent-phase responses associated with the cochlear amplifier, and high-, medium-, and low-spontaneous-rate (SR) fibers with characteristic frequencies (CFs) spanning the AN population. The relative contributions of nonlinear magnitude and nonlinear phase responses to level encoding were compared by using four versions of the model, which included and excluded the nonlinear gain and phase responses in all possible combinations. Nonlinear basilar-membrane (BM) phase responses are robustly encoded in near-CF AN fibers at low frequencies. Strongly compressive BM responses at high frequencies near CF interact with the high thresholds of low-SR AN fibers to produce large dynamic ranges. Coincidence performance based on a narrow range of AN CFs was robust across a wide dynamic range at both low and high frequencies, and matched human performance levels. Coincidence performance based on all CFs demonstrated the "near-miss" to Weber's law at low frequencies and the high-frequency "mid-level bump." Monaural coincidence detection is a physiologically realistic mechanism that is extremely general in that it can utilize AN information (average-rate, synchrony, and nonlinear-phase cues) from all SR groups.
15 W high OSNR kHz-linewidth linearly-polarized all-fiber single-frequency MOPA at 1.6 μm.
Yang, Changsheng; Guan, Xianchao; Zhao, Qilai; Lin, Wei; Li, Can; Gan, Jiulin; Qian, Qi; Feng, Zhouming; Yang, Zhongmin; Xu, Shanhui
2018-05-14
A 1603 nm high optical signal-to-noise ratio (OSNR) kHz-linewidth linearly-polarized all-fiber single-frequency master-oscillator power amplifier (MOPA) is demonstrated. To suppress the amplified spontaneous emission from Yb 3+ /Er 3+ ions with the customized filters and optimize the length of the double cladding active fiber, an over 15 W stable single-longitudinal-mode laser is achieved with an OSNR of >70 dB. A measured laser linewidth of 4.5 kHz and a polarization-extinction ratio of >23 dB are obtained at the full output power. This L-band high-power single-frequency MOPA is promising for high-resolution molecular spectroscopy and pumping of Tm 3+ -doped or Tm 3+ /Ho 3+ co-doped laser.
Robust Optimization Design Algorithm for High-Frequency TWTs
NASA Technical Reports Server (NTRS)
Wilson, Jeffrey D.; Chevalier, Christine T.
2010-01-01
Traveling-wave tubes (TWTs), such as the Ka-band (26-GHz) model recently developed for the Lunar Reconnaissance Orbiter, are essential as communication amplifiers in spacecraft for virtually all near- and deep-space missions. This innovation is a computational design algorithm that, for the first time, optimizes the efficiency and output power of a TWT while taking into account the effects of dimensional tolerance variations. Because they are primary power consumers and power generation is very expensive in space, much effort has been exerted over the last 30 years to increase the power efficiency of TWTs. However, at frequencies higher than about 60 GHz, efficiencies of TWTs are still quite low. A major reason is that at higher frequencies, dimensional tolerance variations from conventional micromachining techniques become relatively large with respect to the circuit dimensions. When this is the case, conventional design- optimization procedures, which ignore dimensional variations, provide inaccurate designs for which the actual amplifier performance substantially under-performs that of the design. Thus, this new, robust TWT optimization design algorithm was created to take account of and ameliorate the deleterious effects of dimensional variations and to increase efficiency, power, and yield of high-frequency TWTs. This design algorithm can help extend the use of TWTs into the terahertz frequency regime of 300-3000 GHz. Currently, these frequencies are under-utilized because of the lack of efficient amplifiers, thus this regime is known as the "terahertz gap." The development of an efficient terahertz TWT amplifier could enable breakthrough applications in space science molecular spectroscopy, remote sensing, nondestructive testing, high-resolution "through-the-wall" imaging, biomedical imaging, and detection of explosives and toxic biochemical agents.
NASA Astrophysics Data System (ADS)
Kim, Ji-Hoon; Jeon, Su-Jin; Ji, Myung-Gi; Park, Jun-Hee; Choi, Young-Wan
2017-02-01
Lock-in amplifier (LIA) has been widely used in optical signal detection systems because it can measure small signal under high noise level. Generally, The LIA used in optical signal detection system is composed of transimpedance amplifier (TIA), phase sensitive detector (PSD) and low pass filter (LPF). But commercial LIA using LPF is affected by flicker noise. To avoid flicker noise, there is 2ω detection LIA using BPF. To improve the dynamic reserve (DR) of the 2ω LIA, the signal to noise ratio (SNR) of the TIA should be improved. According to the analysis of frequency response of the TIA, the noise gain can be minimized by proper choices of input capacitor (Ci) and feed-back network in the TIA in a specific frequency range. In this work, we have studied how the SNR of the TIA can be improved by a proper choice of frequency range. We have analyzed the way to control this frequency range through the change of passive component in the TIA. The result shows that the variance of the passive component in the TIA can change the specific frequency range where the noise gain is minimized in the uniform gain region of the TIA.
Linear transmitter design for MSAT terminals
NASA Technical Reports Server (NTRS)
Wilkinson, Ross; Macleod, John; Beach, Mark; Bateman, Andrew
1990-01-01
One of the factors that will undoubtedly influence the choice of modulation format for mobile satellites, is the availability of cheap, power-efficient, linear amplifiers for mobile terminal equipment operating in the 1.5-1.7 GHz band. Transmitter linearity is not easily achieved at these frequencies, although high power (20W) class A/AB devices are becoming available. However, these components are expensive and require careful design to achieve a modest degree of linearity. In this paper an alternative approach to radio frequency (RF) power amplifier design for mobile satellite (MSAT) terminals using readily-available, power-efficient, and cheap class C devices in a feedback amplifier architecture is presented.
NASA Technical Reports Server (NTRS)
Nicholoson, J. W.; DeSantolo, A.; Yan, M. F.; Wisk, P.; Mangan, B.; Puc, G.; Yu, A.; Stephen, M.
2016-01-01
We demonstrate the first polarization maintaining, very-large-mode-area Er-doped fiber amplifier with 1000 square micron effective area. The amplifier is core pumped by a Raman fiber laser and is used to generate single frequency one microsecond pulses with pulse energy of 368 microJoules, M2 of 1.1, and polarization extinction greater than 20 dB. The amplifier operates at 1572.3 nm, a wavelength useful for trace atmospheric CO2 detection.
NASA Astrophysics Data System (ADS)
A, Volkov Y.
2017-01-01
The expedience of building wideband multistage amplifiers, the stages of which are connected with each other so, that the “modes of impedance mismatch” are realized, is justified. Those modes allow us to reduce considerably the sensitivity of amplifier transfer factors to the stray (constructional) capacitances and inductances of interstage circuits. The procedure of synthesizing the schematics of such amplifiers is proposed, the efficiency and clarity of which are provided by using the method of signal graphs.
NASA Astrophysics Data System (ADS)
Seneviratne, Sashieka
With the growth of smart phones, the demand for more broadband, data centric technologies are being driven higher. As mobile operators worldwide plan and deploy 4th generation (4G) networks such as LTE to support the relentless growth in mobile data demand, the need for strategically positioned pico-sized cellular base stations known as 'pico-cells' are gaining traction. In addition to having to design a transceiver in a much compact footprint, pico-cells must still face the technical challenges presented by the new 4G systems, such as reduced power consumptions and linear amplification of the signals. The RF power amplifier (PA) that amplifies the output signals of 4G pico-cell systems face challenges to minimize size, achieve high average efficiencies and broader bandwidths while maintaining linearity and operating at higher frequencies. 4G standards as LTE use non-constant envelope modulation techniques with high peak to average ratios. Power amplifiers implemented in such applications are forced to operate at a backed off region from saturation. Therefore, in order to reduce power consumption, a design of a high efficiency PA that can maintain the efficiency for a wider range of radio frequency signals is required. The primary focus of this thesis is to enhance the efficiency of a compact RF amplifier suitable for a 4G pico-cell base station. For this aim, an integrated two way Doherty amplifier design in a compact 10mm x 11.5mm2 monolithic microwave integrated circuit using GaN device technology is presented. Using non-linear GaN HFETs models, the design achieves high effi-ciencies of over 50% at both back-off and peak power regions without compromising on the stringent linearity requirements of 4G LTE standards. This demonstrates a 17% increase in power added efficiency at 6 dB back off from peak power compared to conventional Class AB amplifier performance. Performance optimization techniques to select between high efficiency and high linearity operation are also presented. Overall, this thesis demonstrates the feasibility of an integrated HFET Doherty amplifier for LTE band 7 which entails the frequencies from 2.62-2.69GHz. The realization of the layout and various issues related to the PA design is discussed and attempted to be solved.
Optical injection locking-based amplification in phase-coherent transfer of optical frequencies.
Kim, Joonyoung; Schnatz, Harald; Wu, David S; Marra, Giuseppe; Richardson, David J; Slavík, Radan
2015-09-15
We demonstrate the use of an optical injection phase locked loop (OIPLL) as a regenerative amplifier for optical frequency transfer applications. The optical injection locking provides high gain within a narrow bandwidth (<100 MHz) and is capable of preserving the fractional frequency stability of the incoming carrier to better than 10(-18) at 1000 s. The OIPLL was tested in the field as a mid-span amplifier for the transfer of an ultrastable optical carrier, stabilized to an optical frequency standard, over a 292 km long installed dark fiber link. The transferred frequency at the remote end reached a fractional frequency instability of less than 1×10(-19) at averaging time of 3200 s.
A Wide-Band High-Gain Compact SIS Receiver Utilizing a 300-μW SiGe IF LNA
NASA Astrophysics Data System (ADS)
Montazeri, Shirin; Grimes, Paul K.; Tong, Cheuk-Yu Edward; Bardin, Joseph C.
2017-06-01
Low-power low-noise amplifiers integrated with superconductor-insulator-superconductor (SIS) mixers are required to enable implementation of large-scale focal plane arrays. In this work, a 220-GHz SIS mixer has been integrated with a high-gain broad-band low-power IF amplifier into a compact receiver module. The low noise amplifier (LNA) was specifically designed to match to the SIS output impedance and contributes less than 7 K to the system noise temperature over the 4-8 GHz IF frequency range. A receiver noise temperature of 30-45 K was measured for a local oscillator frequency of 220 GHz over an IF spanning 4-8 GHz. The LNA power dissipation was only 300-μW. To the best of the authors' knowledge, this is the lowest power consumption reported for a high-gain wide-band LNA directly integrated with an SIS mixer.
A study on the high-order mode oscillation in a four-cavity intense relativistic klystron amplifier
DOE Office of Scientific and Technical Information (OSTI.GOV)
Liu, Ying-Hui; Niu, Xin-Jian; Wang, Hui
The high-order mode oscillation is studied in designing a four-cavity intense relativistic klystron amplifier. The reason for the oscillation caused by high-order modes and a method to suppress these kinds of spurious modes are found through theoretical analyses and the study on the influence of major parameters of a high frequency structure (such as the oscillation frequency of cavities, the cavity Q value, the length of drift tube section, and the characteristic impedance). Based on much simulation, a four-cavity intense relativistic klystron amplifier with a superior performance has been designed, built, and tested. An output power of 2.22 GW corresponding tomore » 27.4% efficiency and 61 dB gain has been obtained. Moreover, the high-order mode oscillation is suppressed effectively, and an output power of 1.95 GW corresponding to 26% efficiency and 62 dB gain has been obtained in our laboratory.« less
High power pumped MID-IR wavelength devices using nonlinear frequency mixing (NFM)
NASA Technical Reports Server (NTRS)
Sanders, Steven (Inventor); Lang, Robert J. (Inventor); Waarts, Robert G. (Inventor)
2001-01-01
Laser diode pumped mid-IR wavelength sources include at least one high power, near-IR wavelength, injection and/or sources wherein one or both of such sources may be tunable providing a pump wave output beam to a quasi-phase matched (QPM) nonlinear frequency mixing (NFM) device. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Wavelength tuning of at least one of the sources advantageously provides the ability for optimizing pump or injection wavelengths to match the QPM properties of the NFM device enabling a broad range of mid-IR wavelength selectivity. Also, pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.
High power pumped mid-IR wavelength systems using nonlinear frequency mixing (NFM) devices
NASA Technical Reports Server (NTRS)
Sanders, Steven (Inventor); Lang, Robert J. (Inventor); Waarts, Robert G. (Inventor)
1999-01-01
Laser diode pumped mid-IR wavelength systems include at least one high power, near-IR wavelength, injection and/or sources wherein one or both of such sources may be tunable providing a pump wave output beam to a quasi-phase matched (QPM) nonlinear frequency mixing (NFM) device. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Wavelength tuning of at least one of the sources advantageously provides the ability for optimizing pump or injection wavelengths to match the QPM properties of the NFM device enabling a broad range of mid-IR wavelength selectivity. Also, pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.
High stability buffered phase comparator
NASA Technical Reports Server (NTRS)
Adams, W. A.; Reinhardt, V. S. (Inventor)
1984-01-01
A low noise RF signal phase comparator comprised of two high stability driver buffer amplifiers driving a double balanced mixer which operate to generate a beat frequency between the two RF input signals coupled to the amplifiers from the RF sources is described. The beat frequency output from the mixer is applied to a low noise zero crossing detector which is the phase difference between the two RF inputs. Temperature stability is provided by mounting the amplifiers and mixer on a common circuit board with the active circuit elements located on one side of a circuit board and the passive circuit elements located on the opposite side. A common heat sink is located adjacent the circuit board. The active circuit elements are embedded into the bores of the heat sink which slows the effect of ambient temperature changes and reduces the temperature gradients between the active circuit elements, thus improving the cancellation of temperature effects. The two amplifiers include individual voltage regulators, which increases RF isolation.
SQUID amplifiers for axion search experiments
NASA Astrophysics Data System (ADS)
Matlashov, Andrei; Schmelz, Matthias; Zakosarenko, Vyacheslav; Stolz, Ronny; Semertzidis, Yannis K.
2018-04-01
In the experiments for dark-matter QCD-axion searches, very weak microwave signals from a low-temperature High-Q resonant cavity should be detected using the highest sensitivity. The best commercial low-noise cryogenic semiconductor amplifiers based on high electron mobility transistors have a lowest noise temperature above 1.0 K, even if they are cooled well below 1 K. Superconducting quantum interference devices can work as microwave amplifiers with temperature noise close to the standard quantum limit. Previous SQUID-based RF amplifiers designed for axion search experiments have a microstrip resonant input coil and are thus called micro-strip SQUID amplifiers or MSAs. Due to the resonant input coupling they usually have narrow bandwidth. In this paper we report on a SQUID-based wideband microwave amplifier fabricated using sub-micron size Josephson junctions with very low capacitance. A single amplifier can be used in a frequency range of approximately 1-5 GHz.
A fully integrated neural recording amplifier with DC input stabilization.
Mohseni, Pedram; Najafi, Khalil
2004-05-01
This paper presents a low-power low-noise fully integrated bandpass operational amplifier for a variety of biomedical neural recording applications. A standard two-stage CMOS amplifier in a closed-loop resistive feedback configuration provides a stable ac gain of 39.3 dB at 1 kHz. A subthreshold PMOS input transistor is utilized to clamp the large and random dc open circuit potentials that normally exist at the electrode-electrolyte interface. The low cutoff frequency of the amplifier is programmable up to 50 Hz, while its high cutoff frequency is measured to be 9.1 kHz. The tolerable dc input range is measured to be at least +/- 0.25 V with a dc rejection factor of at least 29 dB. The amplifier occupies 0.107 mm2 in die area, and dissipates 115 microW from a 3 V power supply. The total measured input-referred noise voltage in the frequency range of 0.1-10 kHz is 7.8 microVrms. It is fabricated using AMI 1.5 microm double-poly double-metal n-well CMOS process. This paper presents full characterization of the dc, ac, and noise performance of this amplifier through in vitro measurements in saline using two different neural recording electrodes.
Improved Beam Jitter Control Methods for High Energy Laser Systems
2009-12-01
Figure 16. The inner loop is a rate control loop composed of a gimbal, power amplifier , controller, and servo components (gyro, motor, and encoder...system characterization experiments 1. WFOV Control Loop a. Resonance Frequency Random signals were applied to the power amplifier and output...Loop Stabilization By applying a disturbance to the input of the power amplifier and measuring torque error, one is able to determine the torque
Induction magnetometer using a high-Tc superconductor coil
NASA Astrophysics Data System (ADS)
Sasada, Ichiro
2010-05-01
An induction magnetometer consisting of a search coil and an inverting operational amplifier is simple in structure and in signal transferring mechanism from the magnetic field input to the voltage output. Because this magnetometer is based on Faraday's law of induction, it has a lower cutoff frequency r/(2πL), where r is the resistance of the coil and L is its inductance. An attempt has been made to lower the cutoff frequency of the induction magnetometer by using a high-Tc superconductor coil. With a pancake coil (inner diameter ≈18 cm and outer diameter ≈23 cm, 92 turns, 3.23 mH) made of a Bismuth strontium calcium copper oxide (BSCCO) superconductor tape of 5 mm in width and 0.23 mm in thickness, the cutoff frequency achieved was 1.7 Hz which is much lower than that obtained with a bulky copper search coil which is typically in the range of 10-20 Hz. In the experiment, an inverting amplifier was made with a complementary metal-oxide semiconductor operational amplifier and was immersed in liquid nitrogen together with a BSCCO high-Tc superconducting coil. Discussion is made on the resolution of the induction magnetometer using a high-Tc superconductor search coil.
Programmable Gain Amplifiers with DC Suppression and Low Output Offset for Bioelectric Sensors
Carrera, Albano; de la Rosa, Ramón; Alonso, Alonso
2013-01-01
DC-offset and DC-suppression are key parameters in bioelectric amplifiers. However, specific DC analyses are not often explained. Several factors influence the DC-budget: the programmable gain, the programmable cut-off frequencies for high pass filtering and, the low cut-off values and the capacitor blocking issues involved. A new intermediate stage is proposed to address the DC problem entirely. Two implementations were tested. The stage is composed of a programmable gain amplifier (PGA) with DC-rejection and low output offset. Cut-off frequencies are selectable and values from 0.016 to 31.83 Hz were tested, and the capacitor deblocking is embedded in the design. Hence, this PGA delivers most of the required gain with constant low output offset, notwithstanding the gain or cut-off frequency selected. PMID:24084109
Band-Pass Amplifier Without Discrete Reactance Elements
NASA Technical Reports Server (NTRS)
Kleinberg, L.
1984-01-01
Inherent or "natural" device capacitance exploited. Band-Pass Circuit has input impedance of equivalent circuit at frequencies much greater than operational-amplifier rolloff frequency. Apparent inductance and capacitance arise from combined effects of feedback and reactive component of amplifier gain in frequency range.
Ooe, Hiroaki; Fujii, Mikihiro; Tomitori, Masahiko; Arai, Toyoko
2016-02-01
High-Q factor retuned fork (RTF) force sensors made from quartz tuning forks, and the electric circuits for the sensors, were evaluated and optimized to improve the performance of non-contact atomic force microscopy (nc-AFM) performed under ultrahigh vacuum (UHV) conditions. To exploit the high Q factor of the RTF sensor, the oscillation of the RTF sensor was excited at its resonant frequency, using a stray capacitance compensation circuit to cancel the excitation signal leaked through the stray capacitor of the sensor. To improve the signal-to-noise (S/N) ratio in the detected signal, a small capacitor was inserted before the input of an operational (OP) amplifier placed in an UHV chamber, which reduced the output noise from the amplifier. A low-noise, wideband OP amplifier produced a superior S/N ratio, compared with a precision OP amplifier. The thermal vibrational density spectra of the RTF sensors were evaluated using the circuit. The RTF sensor with an effective spring constant value as low as 1000 N/m provided a lower minimum detection limit for force differentiation. A nc-AFM image of a Si(111)-7 × 7 surface was produced with atomic resolution using the RTF sensor in a constant frequency shift mode; tunneling current and energy dissipation images with atomic resolution were also simultaneously produced. The high-Q factor RTF sensor showed potential for the high sensitivity of energy dissipation as small as 1 meV/cycle and the high-resolution analysis of non-conservative force interactions.
MacKenzie, Michael J; Nicklas, Eric; Brooks-Gunn, Jeanne; Waldfogel, Jane
2014-12-01
This study used the Fragile Families and Child Well-Being Study to examine the effects of repeated exposure to harsh parenting on child externalizing behavior across the first decade of life, and a moderating role for cumulative ecological risk. Maternal report of harsh parenting, defined as high frequency spanking, was assessed at age 1, 3, 5, and 9, along with child externalizing at age 9 (N=2,768). Controlling for gender, race, maternal nativity, and city of residence, we found a cumulative risk index to significantly moderate the effects of repeated harsh parenting on child behavior, with the effects of repeated high-frequency spanking being amplified for those experiencing greater levels of cumulative risk. Harsh parenting, in the form of high frequency spanking, remains a too common experience for children, and results demonstrate that the effects of repeated exposure to harsh parenting across the first decade are amplified for those children already facing the most burden. Copyright © 2014. Published by Elsevier Ltd.
MacKenzie, Michael J.; Nicklas, Eric; Brooks-Gunn, Jeanne; Waldfogel, Jane
2016-01-01
This study used the Fragile Families and Child Well-being study to examine the effects of repeated exposure to harsh parenting on child externalizing behavior across the first decade of life, and a moderating role for cumulative ecological risk. Maternal report of harsh parenting, defined as high frequency spanking, was assessed at age 1, 3, 5, and 9, along with child externalizing at age 9 (N=2768). Controlling for gender, race, maternal nativity, and city of residence, we found a cumulative risk index to significantly moderate the effects of repeated harsh parenting on child behavior, with the effects of repeated high-frequency spanking being amplified for those experiencing greater levels of cumulative risk. Harsh parenting, in the form of high frequency spanking, remains a too common experience for children, and results demonstrate that the effects of repeated exposure to harsh parenting across the first decade are amplified for those children already facing the most burden. PMID:25465318
Hannan, Mahammad A.; Hussein, Hussein A.; Mutashar, Saad; Samad, Salina A.; Hussain, Aini
2014-01-01
With the development of communication technologies, the use of wireless systems in biomedical implanted devices has become very useful. Bio-implantable devices are electronic devices which are used for treatment and monitoring brain implants, pacemakers, cochlear implants, retinal implants and so on. The inductive coupling link is used to transmit power and data between the primary and secondary sides of the biomedical implanted system, in which efficient power amplifier is very much needed to ensure the best data transmission rates and low power losses. However, the efficiency of the implanted devices depends on the circuit design, controller, load variation, changes of radio frequency coil's mutual displacement and coupling coefficients. This paper provides a comprehensive survey on various power amplifier classes and their characteristics, efficiency and controller techniques that have been used in bio-implants. The automatic frequency controller used in biomedical implants such as gate drive switching control, closed loop power control, voltage controlled oscillator, capacitor control and microcontroller frequency control have been explained. Most of these techniques keep the resonance frequency stable in transcutaneous power transfer between the external coil and the coil implanted inside the body. Detailed information including carrier frequency, power efficiency, coils displacement, power consumption, supplied voltage and CMOS chip for the controllers techniques are investigated and summarized in the provided tables. From the rigorous review, it is observed that the existing automatic frequency controller technologies are more or less can capable of performing well in the implant devices; however, the systems are still not up to the mark. Accordingly, current challenges and problems of the typical automatic frequency controller techniques for power amplifiers are illustrated, with a brief suggestions and discussion section concerning the progress of implanted device research in the future. This review will hopefully lead to increasing efforts towards the development of low powered, highly efficient, high data rate and reliable automatic frequency controllers for implanted devices. PMID:25615728
NASA Technical Reports Server (NTRS)
Eichinger, R. A.; Dachel, P.; Miller, W. H.; Ingold, J. S.
1982-01-01
Extremely low noise, high performance, wideband buffer amplifiers and buffered phase comparators were developed. These buffer amplifiers are designed to distribute reference frequencies from 30 KHz to 45 MHz from a hydrogen maser without degrading the hydrogen maser's performance. The buffered phase comparators are designed to intercompare the phase of state of the art hydrogen masers without adding any significant measurement system noise. These devices have a 27 femtosecond phase stability floor and are stable to better than one picosecond for long periods of time. Their temperature coefficient is less than one picosecond per degree C, and they have shown virtually no voltage coefficients.
High power, high signal-to-noise ratio single-frequency 1μm Brillouin all-fiber laser
NASA Astrophysics Data System (ADS)
Wang, Jing; Hou, Yubin; Zhang, Qian; Jin, Dongchen; Sun, Ruoyu; Shi, Hongxing; Liu, Jiang; Wang, Pu
2016-03-01
We demonstrate a high-power, high signal-to-noise ratio single-frequency 1 μm Brillouin all-fiber laser with high slope efficiency. The Brillouin laser system consists of a high-power single-frequency fiber laser and a single-pass Brillouin ring cavity. The high-power single-frequency fiber laser is one-stage master-oscillator power amplifier with the maximum output power of 10.33 W, the signal-to-noise ratio of 50 dB and the slope efficiency of 46%. The Brillouin fiber laser is pumped by the amplified laser with a linewidth of 33 kHz and an output power of 2.61 W limited by the damage threshold of the optical isolator. By optimizing the length of the Brillouin ring cavity to 10 m, stable singlefrequency Brillouin fiber laser is obtained with 3 kHz linewidth owing to the linewidth narrowing effect. At the launched pump power of 2.15 W, the Brillouin fiber laser generates maximum output power of 1.4 W with a slope efficiency of 79% and the optical signal-to-noise ratio of 77 dB.
MMIC HEMT Power Amplifier for 140 to 170 GHz
NASA Technical Reports Server (NTRS)
Samoska, Lorene; Radisic, Vesna; Ngo, Catherine; Janke, Paul; Hu, Ming; Micovic, Miro
2003-01-01
A three-stage monolithic microwave integrated circuit (MMIC) power amplifier that features high-electron-mobility transistors (HEMTs) as gain elements is reviewed. This amplifier is designed to operate in the frequency range of 140 to 170 GHz, which contains spectral lines of several atmospheric molecular species plus subharmonics of other such spectral lines. Hence, this amplifier could serve as a prototype of amplifiers to be incorporated into heterodyne radiometers used in atmospheric science. The original intended purpose served by this amplifier is to boost the signal generated by a previously developed 164-GHz MMIC HEMT doubler and drive a 164-to-328-GHz doubler to provide a few milliwatts of power at 328 GHz.
Ignition feedback regenerative free electron laser (FEL) amplifier
Kim, Kwang-Je; Zholents, Alexander; Zolotorev, Max
2001-01-01
An ignition feedback regenerative amplifier consists of an injector, a linear accelerator with energy recovery, and a high-gain free electron laser amplifier. A fraction of the free electron laser output is coupled to the input to operate the free electron laser in the regenerative mode. A mode filter in this loop prevents run away instability. Another fraction of the output, after suitable frequency up conversion, is used to drive the photocathode. An external laser is provided to start up both the amplifier and the injector, thus igniting the system.
Optically pre-amplified lidar-radar
NASA Astrophysics Data System (ADS)
Morvan, Loic; Dolfi, Daniel; Huignard, Jean-Pierre
2001-09-01
We present the concept of an optically pre-amplified intensity modulated lidar, where the modulation frequency is in the microwave domain (1-10 GHz). Such a system permits to combine directivity of laser beams with mature radar processing. As an intensity modulated or dual-frequency laser beam is directed on a target, the backscattered intensity is collected by an optical system, pass through an optical preamplifier, and is detected on a high speed photodiode in a direct detection scheme. A radar type processing permits then to extract range, speed and identification information. The association of spatially multimode amplifier and direct detection allows low sensitivity to atmospheric turbulence and large field of view. We demonstrated theoretically that optical pre-amplification can greatly enhance sensitivity, even in spatially multimode amplifiers, such as free-space amplifier or multimode doped fiber. Computed range estimates based on this concept are presented. Laboratory demonstrations using 1 to 3 GHz modulated laser sources and >20 dB gain in multimode amplifiers are detailed. Preliminary experimental results on range and speed measurements and possible use for large amplitude vibrometry will be presented.
Project Echo: 961-Mc Lower - Sideband Up - Converter for Satellite-Tracking Radar
NASA Technical Reports Server (NTRS)
Uenohara, M.; Seidel, H.
1961-01-01
A 961-Mc lower-sideband up-converter was specially designed to serve as preamplifier for the satellite-tracking radar used in Project Echo. The amplifier and its power supply are separately boxed and are installed directly behind the tracking antenna. The amplifier has been functioning most satisfactorily and has been used in routine manner to track the Echo satellite from horizon to horizon. This paper describes the design considerations, and details the special steps taken to ensure that the amplifier met the particular system needs of low noise, absolute stability, insensitivity to temperature fluctuations, and high input-power level before the onset of gain compression. The satisfactory operation of this amplifier confirms the great potentiality of parametric amplifiers as stable, low-noise, high-frequency receivers.
A simplified digital lock-in amplifier for the scanning grating spectrometer.
Wang, Jingru; Wang, Zhihong; Ji, Xufei; Liu, Jie; Liu, Guangda
2017-02-01
For the common measurement and control system of a scanning grating spectrometer, the use of an analog lock-in amplifier requires complex circuitry and sophisticated debugging, whereas the use of a digital lock-in amplifier places a high demand on the calculation capability and storage space. In this paper, a simplified digital lock-in amplifier based on averaging the absolute values within a complete period is presented and applied to a scanning grating spectrometer. The simplified digital lock-in amplifier was implemented on a low-cost microcontroller without multipliers, and got rid of the reference signal and specific configuration of the sampling frequency. Two positive zero-crossing detections were used to lock the phase of the measured signal. However, measurement method errors were introduced by the following factors: frequency fluctuation, sampling interval, and integer restriction of the sampling number. The theoretical calculation and experimental results of the signal-to-noise ratio of the proposed measurement method were 2055 and 2403, respectively.
Room-temperature electron spin amplifier based on Ga(In)NAs alloys.
Puttisong, Yuttapoom; Buyanova, Irina A; Ptak, Aaron J; Tu, Charles W; Geelhaar, Lutz; Riechert, Henning; Chen, Weimin M
2013-02-06
The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Bandwidth tunable amplifier for recording biopotential signals.
Hwang, Sungkil; Aninakwa, Kofi; Sonkusale, Sameer
2010-01-01
This paper presents a low noise, low power, bandwidth tunable amplifier for bio-potential signal recording applications. By employing depletion-mode pMOS transistor in diode configuration as a tunable sub pA current source to adjust the resistivity of MOS-Bipolar pseudo-resistor, the bandwidth is adjusted without any need for a separate band-pass filter stage. For high CMRR, PSRR and dynamic range, a fully differential structure is used in the design of the amplifier. The amplifier achieves a midband gain of 39.8dB with a tunable high-pass cutoff frequency ranging from 0.1Hz to 300Hz. The amplifier is fabricated in 0.18εm CMOS process and occupies 0.14mm(2) of chip area. A three electrode ECG measurement is performed using the proposed amplifier to show its feasibility for low power, compact wearable ECG monitoring application.
High-energy, high-average-power laser with Nd:YLF rods corrected by magnetorheological finishing.
Bagnoud, Vincent; Guardalben, Mark J; Puth, Jason; Zuegel, Jonathan D; Mooney, Ted; Dumas, Paul
2005-01-10
A high-energy, high-average-power laser system, optimized to efficiently pump a high-performance optical parametric chirped-pulse amplifier at 527 nm, has been demonstrated. The crystal large-aperture ring amplifier employs two flash-lamp-pumped, 25.4-mm-diameter Nd:YLF rods. The transmitted wave front of these rods is corrected by magnetorheological finishing to achieve nearly diffraction-limited output performance with frequency-doubled pulse energies up to 1.8 J at 5 Hz.
Integrated P-channel MOS gyrator
NASA Technical Reports Server (NTRS)
Hochmair, E. S. (Inventor)
1974-01-01
A gyrator circuit is described which is of the conventional configuration of two amplifiers in a circular loop, one producing zero phase shift and the other producing 180 phase reversal, in a circuit having medium Q composed of all field effect transistors of the same conductivity type. The current source to each gyrator amplifier comprises an amplifier which responds to changes in current, with the amplified signals feed back so as to limit current. The feedback amplifier has a large capacitor connected to bypass high frequency components, thereby stabilizing the output. The design makes possible fabrication of circuits with transistors of only one conductivity type, providing economies in manufacture and use.
High-efficiency S-band harmonic tuning GaN amplifier
NASA Astrophysics Data System (ADS)
Cao, Meng-Yi; Zhang, Kai; Chen, Yong-He; Zhang, Jin-Cheng; Ma, Xiao-Hua; Hao, Yue
2014-03-01
In this paper, we present a high-efficiency S-band gallium nitride (GaN) power amplifier (PA). This amplifier is fabricated based on a self-developed GaN high-electron-mobility transistor (HEMT) with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2nd harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm (~70 W) with a power-added efficiency (PAE) of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz (20% relative bandwidth), the amplifier provides an output power higher than 48 dBm (~ 65 W), with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave (CW) operating conditions, the amplifier gives an output power over 46 dBm (40 W) with PAE beyond 60% over the whole operation frequency range.
Oscillator or Amplifier With Wide Frequency Range
NASA Technical Reports Server (NTRS)
Kleinberg, L.; Sutton, J.
1987-01-01
Inductive and capacitive effects synthesized with feedback circuits. Oscillator/amplifier resistively tunable over wide frequency range. Feedback circuits containing operational amplifiers, resistors, and capacitors synthesize electrical effects of inductance and capacitance in parallel between input terminals. Synthetic inductance and capacitance, and, therefore, resonant frequency of input admittance, adjusted by changing potentiometer setting.
Apparatus for measuring high frequency currents
NASA Technical Reports Server (NTRS)
Hagmann, Mark J. (Inventor); Sutton, John F. (Inventor)
2003-01-01
An apparatus for measuring high frequency currents includes a non-ferrous core current probe that is coupled to a wide-band transimpedance amplifier. The current probe has a secondary winding with a winding resistance that is substantially smaller than the reactance of the winding. The sensitivity of the current probe is substantially flat over a wide band of frequencies. The apparatus is particularly useful for measuring exposure of humans to radio frequency currents.
Highly efficient X-range AlGaN/GaN power amplifier
NASA Astrophysics Data System (ADS)
Tural'chuk, P. A.; Kirillov, V. V.; Osipov, P. E.; Vendik, I. B.; Vendik, O. G.; Parnes, M. D.
2017-09-01
The development of microwave power amplifiers (PAs) based on transistors with an AlGaN/GaN heterojunction are discussed in terms of the possible enhancement of their efficiency. The main focus is on the synthesis of the transforming circuits, which ensure the reactive load at the second- and third-harmonic frequencies and complex impedance at the fundamental frequency. This makes it possible to optimize the complex operation mode of a PA; i.e., to reduce the scattering power and enhance the efficiency. A microwave PA based on the Schottky-barrier-gate field-effect transistor with 80 electrodes based on the GaN pHEMT transistor with a gate length of 0.25 nm and a gate width of 125 nm is experimentally investigated. The amplifier has a pulse output power of 35 W and a power-added efficiency of at least 50% at a working frequency of 9 GHz.
MMIC Replacement for Gunn Diode Oscillators
NASA Technical Reports Server (NTRS)
Crowe, Thomas W.; Porterfield, David
2011-01-01
An all-solid-state replacement for high-frequency Gunn diode oscillators (GDOs) has been proposed for use in NASA s millimeter- and submillimeter-wave sensing instruments. Highly developed microwave oscillators are used to achieve a low-noise and highly stable reference signal in the 10-40-GHz band. Compact amplifiers and high-power frequency multipliers extend the signal to the 100-500-GHz band with minimal added phase noise and output power sufficient for NASA missions. This technology can achieve improved output power and frequency agility, while maintaining phase noise and stability comparable to other GDOs. Additional developments of the technology include: a frequency quadrupler to 145 GHz with 18 percent efficiency and 15 percent fixed tuned bandwidth; frequency doublers featuring 124, 240, and 480 GHz; an integrated 874-GHz subharmonic mixer with a mixer noise temperature of 3,000 K DSB (double sideband) and mixer conversion loss of 11.8 dB DSB; a high-efficiency frequency tripler design with peak output power of 23 mW and 14 mW, and efficiency of 16 and 13 percent, respectively; millimeter-wave integrated circuit (MMIC) power amplifiers to the 30-40 GHz band with high DC power efficiency; and an 874-GHz radiometer suitable for airborne observation with state-of-the-art sensitivity at room temperature and less than 5 W of total power consumption.
NASA Astrophysics Data System (ADS)
Wang, Sijia; Liu, Bowen; Song, Youjian; Hu, Minglie
2016-04-01
We report on a simple passive scheme to reduce the intensity noise of high-power nonlinear fiber amplifiers by use of the spectral-breathing parabolic evolution of the pulse amplification with an optimized negative initial chirp. In this way, the influences of amplified spontaneous emission (ASE) on the amplifier intensity noise can be efficiently suppressed, owing to the lower overall pulse chirp, shorter spectral broadening distance, as well as the asymptotic attractive nature of self-similar pulse amplification. Systematic characterizations of the relative intensity noise (RIN) of a free-running nonlinear Yb-doped fiber amplifier are performed over a series of initial pulse parameters. Experiments show that the measured amplifier RIN increases respect to the decreased input pulse energy, due to the increased amount of ASE noise. For pulse amplification with a proper negative initial chirp, the increase of RIN is found to be smaller than with a positive initial chirp, confirming the ASE noise tolerance of the proposed spectral-breathing parabolic amplification scheme. At the maximum output average power of 27W (25-dB amplification gain), the incorporation of an optimum negative initial chirp (-0.84 chirp parameter) leads to a considerable amplifier root-mean-square (rms) RIN reduction of ~20.5% (integrated from 10 Hz to 10 MHz Fourier frequency). The minimum amplifier rms RIN of 0.025% (integrated from 1 kHz to 5 MHz Fourier frequency) is obtained along with the transform-limited compressed pulse duration of 55fs. To our knowledge, the demonstrated intensity noise performance is the lowest RIN level measured from highpower free-running femtosecond fiber amplifiers.
Development of pre pre-driver amplifier stage for generator of SST-1 ICRH system
NASA Astrophysics Data System (ADS)
Kumar, Sunil; Sinh Makwana, Azad; Srinivas, Y. S. S.; Kulkarni, S. V.; ICRH-RF Group
2010-02-01
The Ion Cyclotron Resonance Heating (ICRH) system for SST1 consists mainly of the cwrf power generator to deliver 1.5MW for 1000sec duration at the frequencies 22.8, 24.3 and 45.6±1MHz, the transmission line and the antenna. This is planned to develop a independent and dedicated cwrf generator that consists of a oscillator, buffer, rf switch, modulator, rf attenuator, directional coupler, three stage solid state low power amplifier and four stage triode & tetrode based high power amplifier with specific performance at 45.6±1MHz including frequencies 22.8 and 24.3±1MHz. The pre pre-driver high power amplifier stage is fabricated about triode 3CX3000A7. The tube has sufficient margin in terms of plate dissipation and grid dissipation that makes it suitable to withstand momentarily load mismatch and to upgrade the source in terms of output power later. This indigenously developed amplifier is integrated inside a radiation resistant rack with all required biasing power supplies, cooling blower, controls, monitors and interlocks for manual or remote control operation. This grounded grid mode amplifier will be operated at plate with 3.8KV/ 800mA in class AB for 1.8KW cwrf output power rating. The input circuit is broadband and the output circuit is tunable with slide variable inductor and a vacuum variable capacitor in the frequency range of 22.8 to 45.6MHz. It is designed for a gain of about 12dB, fabrication completed and undergoing cwrf power testing. This paper presents specifications, design criteria, circuit used, operating parameters, tests conducted and the results obtained.
First On-Wafer Power Characterization of MMIC Amplifiers at Sub-Millimeter Wave Frequencies
NASA Technical Reports Server (NTRS)
Fung, A. K.; Gaier, T.; Samoska, L.; Deal, W. R.; Radisic, V.; Mei, X. B.; Yoshida, W.; Liu, P. S.; Uyeda, J.; Barsky, M.;
2008-01-01
Recent developments in semiconductor technology have enabled advanced submillimeter wave (300 GHz) transistors and circuits. These new high speed components have required new test methods to be developed for characterizing performance, and to provide data for device modeling to improve designs. Current efforts in progressing high frequency testing have resulted in on-wafer-parameter measurements up to approximately 340 GHz and swept frequency vector network analyzer waveguide measurements to 508 GHz. On-wafer noise figure measurements in the 270-340 GHz band have been demonstrated. In this letter we report on on-wafer power measurements at 330 GHz of a three stage amplifier that resulted in a maximum measured output power of 1.78mW and maximum gain of 7.1 dB. The method utilized demonstrates the extension of traditional power measurement techniques to submillimeter wave frequencies, and is suitable for automated testing without packaging for production screening of submillimeter wave circuits.
NASA Technical Reports Server (NTRS)
Sanders, Steven (Inventor); Lang, Robert J. (Inventor)
2001-01-01
Laser diode pumped mid-IR wavelength sources include at least one high power, near-IR wavelength, injection and/or sources wherein one or both of such sources may be tunable providing a pump wave output beam to a quasi-phase matched (QPM) nonlinear frequency mixing (NFM) device. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Wavelength tuning of at least one of the sources advantageously provides the ability for optimizing pump or injection wavelengths to match the QPM properties of the NFM device enabling a broad range of mid-IR wavelength selectivity. Also, pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.
An optical parametric chirped-pulse amplifier for seeding high repetition rate free-electron lasers
Höppner, H.; Hage, A.; Tanikawa, T.; ...
2015-05-15
High repetition rate free-electron lasers (FEL), producing highly intense extreme ultraviolet and x-ray pulses, require new high power tunable femtosecond lasers for FEL seeding and FEL pump-probe experiments. A tunable, 112 W (burst mode) optical parametric chirped-pulse amplifier (OPCPA) is demonstrated with center frequencies ranging from 720–900 nm, pulse energies up to 1.12 mJ and a pulse duration of 30 fs at a repetition rate of 100 kHz. Since the power scalability of this OPCPA is limited by the OPCPA-pump amplifier, we also demonstrate a 6.7–13.7 kW (burst mode) thin-disk OPCPA-pump amplifier, increasing the possible OPCPA output power to manymore » hundreds of watts. Furthermore, third and fourth harmonic generation experiments are performed and the results are used to simulate a seeded FEL with high-gain harmonic generation.« less
Properties and Frequency Conversion of High-Brightness Diode-Laser Systems
NASA Astrophysics Data System (ADS)
Boller, Klaus-Jochen; Beier, Bernard; Wallenstein, Richard
An overview of recent developments in the field of high-power, high-brightness diode-lasers, and the optically nonlinear conversion of their output into other wavelength ranges, is given. We describe the generation of continuous-wave (CW) laser beams at power levels of several hundreds of milliwatts to several watts with near-perfect spatial and spectral properties using Master-Oscillator Power-Amplifier (MOPA) systems. With single- or double-stage systems, using amplifiers of tapered or rectangular geometry, up to 2.85 W high-brightness radiation is generated at wavelengths around 810nm with AlGaAs diodes. Even higher powers, up to 5.2W of single-frequency and high spatial quality beams at 925nm, are obtained with InGaAs diodes. We describe the basic properties of the oscillators and amplifiers used. A strict proof-of-quality for the diode radiation is provided by direct and efficient nonlinear optical conversion of the diode MOPA output into other wavelength ranges. We review recent experiments with the highest power levels obtained so far by direct frequency doubling of diode radiation. In these experiments, 100mW single-frequency ultraviolet light at 403nm was generated, as well as 1W of single-frequency blue radiation at 465nm. Nonlinear conversion of diode radiation into widely tunable infrared radiation has recently yielded record values. We review the efficient generation of widely tunable single-frequency radiation in the infrared with diode-pumped Optical Parametric Oscillators (OPOs). With this system, single-frequency output radiation with powers of more than 0.5W was generated, widely tunable around wavelengths of 2.1,m and 1.65,m and with excellent spectral and spatial quality. These developments are clear indicators of recent advances in the field of high-brightness diode-MOPA systems, and may emphasize their future central importance for applications within a vast range of optical wavelengths.
Spatial Power Combining Amplifier for Ground and Flight Applications
NASA Astrophysics Data System (ADS)
Velazco, J. E.; Taylor, M.
2016-11-01
Vacuum-tube amplifiers such as klystrons and traveling-wave tubes are the workhorses of high-power microwave radiation generation. At JPL, vacuum tubes are extensively used in ground and flight missions for radar and communications. Vacuum tubes use electron beams as the source of energy to achieve microwave power amplification. Such electron beams operate at high kinetic energies and thus require high voltages to function. In addition, vacuum tubes use compact cavity and waveguide structures that hold very intense radio frequency (RF) fields inside. As the operational frequency is increased, the dimensions of these RF structures become increasingly smaller. As power levels and operational frequencies are increased, the highly intense RF fields inside of the tubes' structures tend to arc and create RF breakdown. In the case of very high-power klystrons, electron interception - also known as body current - can produce thermal runaway of the cavities that could lead to the destruction of the tube. The high voltages needed to power vacuum tubes tend to require complicated and cumbersome power supplies. Consequently, although vacuum tubes provide unmatched high-power microwaves, they tend to arc, suffer from thermal issues, and require failure-prone high-voltage power supplies. In this article, we present a new concept for generating high-power microwaves that we refer to as the Spatial Power Combining Amplifier (SPCA). The SPCA is very compact, requires simpler, lower-voltage power supplies, and uses a unique power-combining scheme wherein power from solid-state amplifiers is coherently combined. It is a two-port amplifier and can be used inline as any conventional two-port amplifier. It can deliver its output power to a coaxial line, a waveguide, a feed, or to any microwave load. A key feature of this new scheme is the use of higher-order-mode microwave structures to spatially divide and combine power. Such higher-order-mode structures have considerably larger cross-sections than comparable klystrons and traveling-wave tube counterparts and thus avoid RF breakdown and thermal issues common to vacuum tubes. We present a basic description of the SPCA mechanism and initial results of an S-band (2.4 GHz) 100-W, 45-dB gain SPCA prototype. We also discuss future X-band (8.4 GHz), Ka-band (32 GHz), and W-band (94 GHz) SPCA designs for both radar and communications applications.
NASA Astrophysics Data System (ADS)
Zhu, Lili; Wu, Jingping; Lin, Guimin; Hu, Liangjun; Li, Hui
2016-10-01
With high spatial resolution of ultrasonic location and high sensitivity of optical detection, ultrasound-modulated optical tomography (UOT) is a promising noninvasive biological tissue imaging technology. In biological tissue, the ultrasound-modulated light signals are very weak and are overwhelmed by the strong unmodulated light signals. It is a difficulty and key to efficiently pick out the weak modulated light from strong unmodulated light in UOT. Under the effect of an ultrasonic field, the scattering light intensity presents a periodic variation as the ultrasonic frequency changes. So the modulated light signals would be escape from the high unmodulated light signals, when the modulated light signals and the ultrasonic signal are processed cross correlation operation by a lock-in amplifier and without a chopper. Experimental results indicated that the signal-to-noise ratio of UOT is significantly improved by a lock-in amplifier, and the higher the repetition frequency of pulsed ultrasonic wave, the better the signal-to-noise ratio of UOT.
An operational amplifier B1404UD1A-1 in the patch-clamp current-to-voltage converter.
Korzun, A M; Rozinov, S V; Abashin, G I
1997-01-01
The applicability of the home-made operational amplifier B1404UD1A-1 in a patch-clamp current-to-voltage converter was analyzed. Its parameters (background noise, input bias current, and gain-bandwidth product) were estimated. Schematic solutions and practical recommendations for the use of this amplifier in a current-to-voltage converter were given. Based on the background noise and frequency parameters of the converter, we found that this device can be used for measuring ion channel currents with a high sensitivity and within a broad frequency range (0.055 pA, to 1 kHz; 0.4 pA, to 10 kHz). An example of the converter application in experiments is given.
A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT
NASA Astrophysics Data System (ADS)
Zheng, Jia-Xin; Ma, Xiao-Hua; Lu, Yang; Zhao, Bo-Chao; Zhang, Hong-He; Zhang, Meng; Cao, Meng-Yi; Hao, Yue
2015-10-01
A C-band high efficiency and high gain two-stage power amplifier based on AlGaN/GaN high electron mobility transistor (HEMT) is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency (PAE) are determined at the fundamental and 2nd harmonic frequency (f0 and 2f0). The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5.4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15% and an associated power gain of 28.7 dB, which is an outstanding performance. Project supported by the National Key Basic Research Program of China (Grant No. 2011CBA00606), Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915), and the National Natural Science Foundation of China (Grant No. 61334002).
InP MMIC Chip Set for Power Sources Covering 80-170 GHz
NASA Technical Reports Server (NTRS)
Ngo, Catherine
2001-01-01
We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.
Ku-band high efficiency GaAs MMIC power amplifiers
NASA Technical Reports Server (NTRS)
Tserng, H. Q.; Witkowski, L. C.; Wurtele, M.; Saunier, Paul
1988-01-01
The development of Ku-band high efficiency GaAs MMIC power amplifiers is examined. Three amplifier modules operating over the 13 to 15 GHz frequency range are to be developed. The first MMIC is a 1 W variable power amplifier (VPA) with 35 percent efficiency. On-chip digital gain control is to be provided. The second MMIC is a medium power amplifier (MPA) with an output power goal of 1 W and 40 percent power-added efficiency. The third MMIC is a high power amplifier (HPA) with 4 W output power goal and 40 percent power-added efficiency. An output power of 0.36 W/mm with 49 percent efficiency was obtained on an ion implanted single gate MESFET at 15 GHz. On a dual gate MESFET, an output power of 0.42 W/mm with 27 percent efficiency was obtained. A mask set was designed that includes single stage, two stage, and three stage single gate amplifiers. A single stage 600 micron amplifier produced 0.4 W/mm output power with 40 percent efficiency at 14 GHz. A four stage dual gate amplifier generated 500 mW of output power with 20 dB gain at 17 GHz. A four-bit digital-to-analog converter was designed and fabricated which has an output swing of -3 V to +/- 1 V.
Apparatus and method for microwave processing of materials
Johnson, A.C.; Lauf, R.J.; Bible, D.W.; Markunas, R.J.
1996-05-28
Disclosed is a variable frequency microwave heating apparatus designed to allow modulation of the frequency of the microwaves introduced into a furnace cavity for testing or other selected applications. The variable frequency heating apparatus is used in the method of the present invention to monitor the resonant processing frequency within the furnace cavity depending upon the material, including the state thereof, from which the workpiece is fabricated. The variable frequency microwave heating apparatus includes a microwave signal generator and a high-power microwave amplifier or a microwave voltage-controlled oscillator. A power supply is provided for operation of the high-power microwave oscillator or microwave amplifier. A directional coupler is provided for detecting the direction and amplitude of signals incident upon and reflected from the microwave cavity. A first power meter is provided for measuring the power delivered to the microwave furnace. A second power meter detects the magnitude of reflected power. Reflected power is dissipated in the reflected power load. 10 figs.
NASA Technical Reports Server (NTRS)
Kujawski, Joseph T.; Gliese, Ulrik B.; Cao, N. T.; Zeuch, M. A.; White, D.; Chornay, D. J; Lobell, J. V.; Avanov, L. A.; Barrie, A. C.; Mariano, A. J.;
2015-01-01
Each half of the Dual Electron Spectrometer (DES) of the Fast Plasma Investigation (FPI) on NASA's Magnetospheric MultiScale (MMS) mission utilizes a microchannel plate Chevron stack feeding 16 separate detection channels each with a dedicated anode and amplifier/discriminator chip. The desire to detect events on a single channel with a temporal spacing of 100 ns and a fixed dead-time drove our decision to use an amplifier/discriminator with a very fast (GHz class) front end. Since the inherent frequency response of each pulse in the output of the DES microchannel plate system also has frequency components above a GHz, this produced a number of design constraints not normally expected in electronic systems operating at peak speeds of 10 MHz. Additional constraints are imposed by the geometry of the instrument requiring all 16 channels along with each anode and amplifier/discriminator to be packaged in a relatively small space. We developed an electrical model for board level interactions between the detector channels to allow us to design a board topology which gave us the best detection sensitivity and lowest channel to channel crosstalk. The amplifier/discriminator output was designed to prevent the outputs from one channel from producing triggers on the inputs of other channels. A number of Radio Frequency design techniques were then applied to prevent signals from other subsystems (e.g. the high voltage power supply, command and data handling board, and Ultraviolet stimulation for the MCP) from generating false events. These techniques enabled us to operate the board at its highest sensitivity when operated in isolation and at very high sensitivity when placed into the overall system.
Small-signal amplifier based on single-layer MoS2
NASA Astrophysics Data System (ADS)
Radisavljevic, Branimir; Whitwick, Michael B.; Kis, Andras
2012-07-01
In this letter we demonstrate the operation of an analog small-signal amplifier based on single-layer MoS2, a semiconducting analogue of graphene. Our device consists of two transistors integrated on the same piece of single-layer MoS2. The high intrinsic band gap of 1.8 eV allows MoS2-based amplifiers to operate with a room temperature gain of 4. The amplifier operation is demonstrated for the frequencies of input signal up to 2 kHz preserving the gain higher than 1. Our work shows that MoS2 can effectively amplify signals and that it could be used for advanced analog circuits based on two-dimensional materials.
High Efficiency End-Pumped Ho:Tm:YLF Disk Amplifier
NASA Technical Reports Server (NTRS)
Yu, Jirong; Singh, Upendra N.; Petros, Mulugeta; Axenson, Theresa J.; Barnes, Norman P.
1999-01-01
Space based coherent lidar for global wind measurement requires an all solid state laser system with high energy, high efficiency and narrow linewidth that operates in the eye safe region. A Q-switched, diode pumped Ho:Tm:YLF 2 micrometer laser with output energy of as much as 125 mJ at 6 Hz with an optical-to-optical efficiency of 3% has been reported. Single frequency operation of the laser was achieved by injection seeding. The design of this laser is being incorporated into NASA's SPARCLE (SPAce Readiness Coherent Lidar Experiment) wind lidar mission. Laser output energy ranging from 500 mJ to 2 J is required for an operational space coherent lidar. We previously developed a high energy Ho:Tm:YLF master oscillator and side pumped power amplifier system and demonstrated a 600-mJ single frequency pulse at a repetition rate of 10 Hz. Although the output energy is high, the optical-to-optical efficiency is only about 2%. Designing a high energy, highly efficient, conductively cooled 2-micrometer laser remains a challenge. In this paper, the preliminary result of an end-pumped amplifier that has a potential to provide a factor 3 of improvement in the system efficiency is reported.
2006-04-14
the EOPM (~1 mW) was amplified by injection locking of a high power diode laser and further amplified to ~300 mW with a semiconductor optical ...The spectra of 8 GHz CW phase modulated signals in cascaded injection locking system from (a) master laser ; (b) the first slave, and (c) the second...cascaded injection locked amplifiers at 793nm, and frequency chirped lasers at 793nm. 15. SUBJECT TERMS Optical Coherent Transients, Spatial
Ultraflexible organic amplifier with biocompatible gel electrodes.
Sekitani, Tsuyoshi; Yokota, Tomoyuki; Kuribara, Kazunori; Kaltenbrunner, Martin; Fukushima, Takanori; Inoue, Yusuke; Sekino, Masaki; Isoyama, Takashi; Abe, Yusuke; Onodera, Hiroshi; Someya, Takao
2016-04-29
In vivo electronic monitoring systems are promising technology to obtain biosignals with high spatiotemporal resolution and sensitivity. Here we demonstrate the fabrication of a biocompatible highly conductive gel composite comprising multi-walled carbon nanotube-dispersed sheet with an aqueous hydrogel. This gel composite exhibits admittance of 100 mS cm(-2) and maintains high admittance even in a low-frequency range. On implantation into a living hypodermal tissue for 4 weeks, it showed a small foreign-body reaction compared with widely used metal electrodes. Capitalizing on the multi-functional gel composite, we fabricated an ultrathin and mechanically flexible organic active matrix amplifier on a 1.2-μm-thick polyethylene-naphthalate film to amplify (amplification factor: ∼200) weak biosignals. The composite was integrated to the amplifier to realize a direct lead epicardial electrocardiography that is easily spread over an uneven heart tissue.
Applying the Multisim Technology to Teach the Course of High Frequency Power Amplifier
ERIC Educational Resources Information Center
Lv, Gang; Xue, Yuan-Sheng
2011-01-01
As one important professional base course in the electric information specialty, the course of "high frequency electronic circuit" has strong theoretical characteristic and abstract content. To enhance the teaching quality of this course, the computer simulation technology based on Multisim is introduced into the teaching of "high…
Multiple Differential-Amplifier MMICs Embedded in Waveguides
NASA Technical Reports Server (NTRS)
Kangaslahti, Pekka; Schlecht, Erich
2010-01-01
Compact amplifier assemblies of a type now being developed for operation at frequencies of hundreds of gigahertz comprise multiple amplifier units in parallel arrangements to increase power and/or cascade arrangements to increase gains. Each amplifier unit is a monolithic microwave integrated circuit (MMIC) implementation of a pair of amplifiers in differential (in contradistinction to single-ended) configuration. Heretofore, in cascading amplifiers to increase gain, it has been common practice to interconnect the amplifiers by use of wires and/or thin films on substrates. This practice has not yielded satisfactory results at frequencies greater than 200 Hz, in each case, for either or both of two reasons: Wire bonds introduce large discontinuities. Because the interconnections are typically tens of wavelengths long, any impedance mismatches give rise to ripples in the gain-vs.-frequency response, which degrade the performance of the cascade.
NASA Astrophysics Data System (ADS)
Legg, Thomas; Farries, Mark
2017-02-01
Cold atom interferometers are emerging as important tools for metrology. Designed into gravimeters they can measure extremely small changes in the local gravitational field strength and be used for underground surveying to detect buried utilities, mineshafts and sinkholes prior to civil works. To create a cold atom interferometer narrow linewidth, frequency stabilised lasers are required to cool the atoms and to setup and measure the atom interferometer. These lasers are commonly either GaAs diodes, Ti Sapphire lasers or frequency doubled InGaAsP diodes and fibre lasers. The InGaAsP DFB lasers are attractive because they are very reliable, mass-produced, frequency controlled by injection current and simply amplified to high powers with fibre amplifiers. In this paper a laser system suitable for Rb atom cooling, based on a 1560nm DFB laser and erbium doped fibre amplifier, is described. The laser output is frequency doubled with fibre coupled periodically poled LiNbO3 to a wavelength of 780nm. The output power exceeds 1 W at 780nm. The laser is stabilised at 1560nm against a fibre Bragg resonator that is passively temperature compensated. Frequency tuning over a range of 1 GHz is achieved by locking the laser to sidebands of the resonator that are generated by a phase modulator. This laser design is attractive for field deployable rugged systems because it uses all fibre coupled components with long term proven reliability.
Recent advances in capacitance type of blade tip clearance measurements
NASA Technical Reports Server (NTRS)
Barranger, John P.
1988-01-01
Two recent electronic advances at NASA-Lewis that meet the blade tip clearance needs of a wide class of fans, compressors, and turbines are described. The first is a frequency modulated (FM) oscillator that requires only a single low cost ultrahigh frequency operational amplifier. Its carrier frequency is 42.8 MHz when used with a 61 cm long hermetically sealed coaxial cable. The oscillator can be calibrated in the static mode and has a negative peak frequency deviation of 400 kHz for a typical rotor blade. High temperature performance tests of the probe and 13 cm of the adjacent cable show good accuracy up to 600 C, the maximum which produces a clearance error of + or - 10 microns at a clearance of 500 microns. In the second advance, a guarded probe configuration allows a longer cable capacitance. The capacitance of the probe is part of a small time constant feedback in a high speed operational amplifier. The solution of the governing differential equation is applied to a ramp type of input. The results show an amplifier output that contains a term which is proportional to the derivative of the feedback capacitance. The capacitance is obtained by subtracting a balancing reference channel followed by an integration stage.
A stabilized optical frequency comb based on an Er-doped fiber femtosecond laser
NASA Astrophysics Data System (ADS)
Xia, Chuanqing; Wu, Tengfei; Zhao, Chunbo; Xing, Shuai
2018-03-01
An optical frequency comb based on a 250 MHz home-made Er-doped fiber femtosecond laser is presented in this paper. The Er-doped fiber laser has a ring cavity and operates mode-locked in femtosecond regime with the technique of nonlinear polarization rotation. The pulse duration is 118 fs and the spectral width is 30 nm. A part of the femtosecond laser is amplified in Er-doped fiber amplifier before propagating through a piece of highly nonlinear fiber for expanding the spectrum. The carrier-envelope offset frequency of the comb which has a signal-to-noise ratio more than 35 dB is extracted by means of f-2f beating. It demonstrates that both carrier-envelope offset frequency and repetition frequency keep phase locked to a Rubidium atomic clock simultaneously for 2 hours. The frequency stabilized fiber combs will be increasingly applied in optical metrology, attosecond pulse generation, and absolute distance measurement.
Hannemann, S; van Duijn, E-J; Ubachs, W
2007-10-01
A narrow-band tunable injection-seeded pulsed titanium:sapphire laser system has been developed for application in high-resolution spectroscopic studies at the fundamental wavelengths in the near infrared as well as in the ultraviolet, deep ultraviolet, and extreme ultraviolet after upconversion. Special focus is on the quantitative assessment of the frequency characteristics of the oscillator-amplifier system on a pulse-to-pulse basis. Frequency offsets between continuous-wave seed light and the pulsed output are measured as well as linear chirps attributed mainly to mode pulling effects in the oscillator cavity. Operational conditions of the laser are found in which these offset and chirp effects are minimal. Absolute frequency calibration at the megahertz level of accuracy is demonstrated on various atomic and molecular resonance lines.
A frequency doubled pressure-tunable oscillator-amplifier dye laser system
NASA Technical Reports Server (NTRS)
Moriarty, A.; Heaps, W.; Davis, D. D.
1976-01-01
A tunable high-repetition-rate oscillator-amplifier dye-laser system is reported. The dye laser described was longitudinally pumped with the second harmonic of a Nd-YAG laser operating at 10 Hz. Using three Faraday-Perot etalons and pressure tuning, a maximum fundamental output power of the order of 6 MW with a corresponding spectral width of less than 0.003 nm at 564 nm was obtained. The fundamental at 564 nm was frequency doubled to give a maximum power level of 0.6 MW of second-harmonic output power with a spectral width less than 0.0015 nm at 282 nm. Frequency stability could be maintained to within approximately 15% of the line-width.
NASA Astrophysics Data System (ADS)
Watanabe, Shuji; Takano, Hiroshi; Fukuda, Hiroya; Hiraki, Eiji; Nakaoka, Mutsuo
This paper deals with a digital control scheme of multiple paralleled high frequency switching current amplifier with four-quadrant chopper for generating gradient magnetic fields in MRI (Magnetic Resonance Imaging) systems. In order to track high precise current pattern in Gradient Coils (GC), the proposal current amplifier cancels the switching current ripples in GC with each other and designed optimum switching gate pulse patterns without influences of the large filter current ripple amplitude. The optimal control implementation and the linear control theory in GC current amplifiers have affinity to each other with excellent characteristics. The digital control system can be realized easily through the digital control implementation, DSPs or microprocessors. Multiple-parallel operational microprocessors realize two or higher paralleled GC current pattern tracking amplifier with optimal control design and excellent results are given for improving the image quality of MRI systems.
A high efficiency PWM CMOS class-D audio power amplifier
NASA Astrophysics Data System (ADS)
Zhangming, Zhu; Lianxi, Liu; Yintang, Yang; Han, Lei
2009-02-01
Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 μm CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 μA. The active area of the class-D audio power amplifier is about 1.47 × 1.52 mm2. With the good performance, the class-D audio power amplifier can be applied to several audio power systems.
Low Noise Amplifiers for 140 Ghz Wide-Band Cryogenic Receivers
NASA Technical Reports Server (NTRS)
Larkoski, Patricia V.; Kangaslahti, Pekka; Samoska, Lorene; Lai, Richard; Sarkozy, Stephen
2013-01-01
We report S-parameter and noise measurements for three different Indium Phosphide 35-nanometer-gate-length High Electron Mobility Transistor (HEMT) Low Noise Amplifier (LNA) designs operating in the frequency range centered on 140 gigahertz. When packaged in a Waveguide Rectangular-6.1 waveguide housing, the LNAs have an average measured noise figure of 3.0 decibels - 3.6 decibels over the 122-170 gigahertz band. One LNA was cooled to 20 degrees Kelvin and a record low noise temperature of 46 Kelvin, or 0.64 decibels noise figure, was measured at 152 gigahertz. These amplifiers can be used to develop receivers for instruments that operate in the 130-170 gigahertz atmospheric window, which is an important frequency band for ground-based astronomy and millimeter-wave imaging applications.
Gudino, Natalia; Duan, Qi; de Zwart, Jacco A; Murphy-Boesch, Joe; Dodd, Stephen J; Merkle, Hellmut; van Gelderen, Peter; Duyn, Jeff H
2015-01-01
Purpose We tested the feasibility of implementing parallel transmission (pTX) for high field MRI using a radiofrequency (RF) amplifier design to be located on or in the immediate vicinity of a RF transmit coil. Method We designed a current-source switch-mode amplifier based on miniaturized, non-magnetic electronics. Optical RF carrier and envelope signals to control the amplifier were derived, through a custom-built interface, from the RF source accessible in the scanner control. Amplifier performance was tested by benchtop measurements as well as with imaging at 7 T (300 MHz) and 11.7 T (500 MHz). The ability to perform pTX was evaluated by measuring inter-channel coupling and phase adjustment in a 2-channel setup. Results The amplifier delivered in excess of 44 W RF power and caused minimal interference with MRI. The interface derived accurate optical control signals with carrier frequencies ranging from 64 to 750 MHz. Decoupling better than 14 dB was obtained between 2 coil loops separated by only 1 cm. Application to MRI was demonstrated by acquiring artifact-free images at 7 T and 11.7 T. Conclusion An optically controlled miniaturized RF amplifier for on-coil implementation at high field is demonstrated that should facilitate implementation of high-density pTX arrays. PMID:26256671
High Efficiency Microwave Power Amplifier: From the Lab to Industry
NASA Technical Reports Server (NTRS)
Sims, William Herbert, III; Bell, Joseph L. (Technical Monitor)
2001-01-01
Since the beginnings of space travel, various microwave power amplifier designs have been employed. These included Class-A, -B, and -C bias arrangements. However, shared limitation of these topologies is the inherent high total consumption of input power associated with the generation of radio frequency (RF)/microwave power. The power amplifier has always been the largest drain for the limited available power on the spacecraft. Typically, the conversion efficiency of a microwave power amplifier is 10 to 20%. For a typical microwave power amplifier of 20 watts, input DC power of at least 100 watts is required. Such a large demand for input power suggests that a better method of RF/microwave power generation is required. The price paid for using a linear amplifier where high linearity is unnecessary includes higher initial and operating costs, lower DC-to-RF conversion efficiency, high power consumption, higher power dissipation and the accompanying need for higher capacity heat removal means, and an amplifier that is more prone to parasitic oscillation. The first use of a higher efficiency mode of power generation was described by Baxandall in 1959. This higher efficiency mode, Class-D, is achieved through distinct switching techniques to reduce the power losses associated with switching, conduction, and gate drive losses of a given transistor.
Variable frequency microwave furnace system
DOE Office of Scientific and Technical Information (OSTI.GOV)
Bible, D.W.; Lauf, R.J.
1994-06-14
A variable frequency microwave furnace system designed to allow modulation of the frequency of the microwaves introduced into a furnace cavity for testing or other selected applications. The variable frequency microwave furnace system includes a microwave signal generator or microwave voltage-controlled oscillator for generating a low-power microwave signal for input to the microwave furnace. A first amplifier may be provided to amplify the magnitude of the signal output from the microwave signal generator or the microwave voltage-controlled oscillator. A second amplifier is provided for processing the signal output by the first amplifier. The second amplifier outputs the microwave signal inputmore » to the furnace cavity. In the preferred embodiment, the second amplifier is a traveling-wave tube (TWT). A power supply is provided for operation of the second amplifier. A directional coupler is provided for detecting the direction of a signal and further directing the signal depending on the detected direction. A first power meter is provided for measuring the power delivered to the microwave furnace. A second power meter detects the magnitude of reflected power. Reflected power is dissipated in the reflected power load. 5 figs.« less
Variable frequency microwave furnace system
Bible, D.W.; Lauf, R.J.
1994-06-14
A variable frequency microwave furnace system designed to allow modulation of the frequency of the microwaves introduced into a furnace cavity for testing or other selected applications. The variable frequency microwave furnace system includes a microwave signal generator or microwave voltage-controlled oscillator for generating a low-power microwave signal for input to the microwave furnace. A first amplifier may be provided to amplify the magnitude of the signal output from the microwave signal generator or the microwave voltage-controlled oscillator. A second amplifier is provided for processing the signal output by the first amplifier. The second amplifier outputs the microwave signal input to the furnace cavity. In the preferred embodiment, the second amplifier is a traveling-wave tube (TWT). A power supply is provided for operation of the second amplifier. A directional coupler is provided for detecting the direction of a signal and further directing the signal depending on the detected direction. A first power meter is provided for measuring the power delivered to the microwave furnace. A second power meter detects the magnitude of reflected power. Reflected power is dissipated in the reflected power load. 5 figs.
An inductorless multi-mode RF front end for GNSS receiver in 55 nm CMOS
NASA Astrophysics Data System (ADS)
Yanbin, Luo; Chengyan, Ma; Yebing, Gan; Min, Qian; Tianchun, Ye
2015-10-01
An inductorless multi-mode RF front end for a global navigation satellite system (GNSS) receiver is presented. Unlike the traditional topology of a low noise amplifier (LNA), the inductorless current-mode noise-canceling LNA is applied in this design. The high-impedance-input radio frequency amplifier (RFA) further amplifies the GNSS signals and changes the single-end signal path into fully differential. The passive mixer down-converts the signals to the intermediate frequency (IF) band and conveys the signals to the analogue blocks. The local oscillator (LO) buffer divides the output frequency of the voltage controlled oscillator (VCO) and generates 25%-duty-cycle quadrature square waves to drive the mixer. Our measurement results display that the implemented RF front end achieves good overall performance while consuming only 6.7 mA from 1.2 V supply. The input return loss is better than -26 dB and the ultra low noise figure of 1.43 dB leads to high sensitivity of the GNSS receiver. The input 1 dB compression point is -43 dBm at the high gain of 48 dB. The designed circuit is fabricated in 55 nm CMOS technology and the die area, which is much smaller than traditional circuit, is around 220 × 280 μm2.
Transferred substrate heterojunction bipolar transistors for submillimeter wave applications
NASA Technical Reports Server (NTRS)
Fung, A.; Samoska, L.; Siegel, P.; Rodwell, M.; Urteaga, M.; Paidi, V.
2003-01-01
We present ongoing work towards the development of submillimeter wave transistors with goals of realizing advanced high frequency amplifiers, voltage controlled oscillators, active multipliers, and traditional high-speed digital circuits.
HEMT Amplifiers and Equipment for their On-Wafer Testing
NASA Technical Reports Server (NTRS)
Fung, King man; Gaier, Todd; Samoska, Lorene; Deal, William; Radisic, Vesna; Mei, Xiaobing; Lai, Richard
2008-01-01
Power amplifiers comprising InP-based high-electron-mobility transistors (HEMTs) in coplanar-waveguide (CPW) circuits designed for operation at frequencies of hundreds of gigahertz, and a test set for onwafer measurement of their power levels have been developed. These amplifiers utilize an advanced 35-nm HEMT monolithic microwave integrated-circuit (MMIC) technology and have potential utility as local-oscillator drivers and power sources in future submillimeter-wavelength heterodyne receivers and imaging systems. The test set can reduce development time by enabling rapid output power characterization, not only of these and similar amplifiers, but also of other coplanar-waveguide power circuits, without the necessity of packaging the circuits.
Development of a Low-Noise High Common-Mode-Rejection Instrumentation Amplifier. M.S. Thesis
NASA Technical Reports Server (NTRS)
Rush, Kenneth; Blalock, T. V.; Kennedy, E. J.
1975-01-01
Several previously used instrumentation amplifier circuits were examined to find limitations and possibilities for improvement. One general configuration is analyzed in detail, and methods for improvement are enumerated. An improved amplifier circuit is described and analyzed with respect to common mode rejection and noise. Experimental data are presented showing good agreement between calculated and measured common mode rejection ratio and equivalent noise resistance. The amplifier is shown to be capable of common mode rejection in excess of 140 db for a trimmed circuit at frequencies below 100 Hz and equivalent white noise below 3.0 nv/square root of Hz above 1000 Hz.
NASA Astrophysics Data System (ADS)
Shay, T. M.; Benham, Vincent; Baker, J. T.; Ward, Benjamin; Sanchez, Anthony D.; Culpepper, Mark A.; Pilkington, D.; Spring, Justin; Nelson, Douglas J.; Lu, Chunte A.
2006-08-01
A novel high accuracy all electronic technique for phase locking arrays of optical fibers is demonstrated. We report the first demonstration of the only electronic phase locking technique that doesn't require a reference beam. The measured phase error is λ/20. Excellent phase locking has been demonstrated for fiber amplifier arrays.
Cosmanescu, Alin; Miller, Benjamin; Magno, Terence; Ahmed, Assad; Kremenic, Ian
2006-01-01
A portable, multi-purpose Bio-instrumentation Amplifier and Data AcQuisition device (BADAQ) capable of measuring and transmitting EMG and EKG signals wirelessly via Bluetooth is designed and implemented. Common topologies for instrumentation amplifiers and filters are used and realized with commercially available, low-voltage, high precision operational amplifiers. An 8-bit PIC microcontroller performs 10-bit analog-to-digital conversion of the amplified and filtered signals and controls a Bluetooth transceiver capable of wirelessly transmitting the data to any Bluetooth enabled device. Electrical isolation between patient/subject, circuitry, and ancillary equipment is achieved by optocoupling components. The design focuses on simplicity, portability, and affordability.
NASA Astrophysics Data System (ADS)
Latorre-Rey, Alvaro D.; Sabatti, Flavio F. M.; Albrecht, John D.; Saraniti, Marco
2017-07-01
In order to assess the underlying physical mechanisms of hot carrier-related degradation such as defect generation in millimeter-wave GaN power amplifiers, we have simulated the electron energy distribution function under large-signal radio frequency conditions in AlGaN/GaN high-electron-mobility transistors. Our results are obtained through a full band Monte Carlo particle-based simulator self-consistently coupled to a harmonic balance circuit solver. At lower frequency, simulations of a Class AB power amplifier at 10 GHz show that the peak hot electron generation is up to 43% lower under RF drive than it is under DC conditions, regardless of the input power or temperature of operation. However, at millimeter-wave operation up to 40 GHz, RF hot carrier generation reaches that from DC biasing and even exceeds it up to 75% as the amplifier is driven into compression. Increasing the temperature of operation also shows that degradation of DC and RF characteristics are tightly correlated and mainly caused by increased phonon scattering. The accurate determination of the electron energy mapping is demonstrated to be a powerful tool for the extraction of compact models used in lifetime and reliability analysis.
A broadband high-efficiency Doherty power amplifier using symmetrical devices
NASA Astrophysics Data System (ADS)
Cheng, Zhiqun; Zhang, Ming; Li, Jiangzhou; Liu, Guohua
2018-04-01
This paper proposes a method for broadband and high-efficiency amplification of Doherty power amplifier (DPA) using symmetric devices. In order to achieve the perfect load modulation, the carrier amplifier output circuit total power length is designed to odd multiple of 90°, and the peak amplifier output total power length is designed to even multiple of 180°. The proposed method is demonstrated by designing a broadband high-efficiency DPA using identical 10-W packaged GaN HEMT devices. Measurement results show that over 51% drain efficiency is achieved at 6-dB back-off power, over the frequency band of 1.9–2.4 GHz. Project supported by the National Natural Science Foundation of China (No. 60123456), the Zhejiang Provincial Natural Science Foundation of China (No. LZ16F010001), and the Zhejiang Provincial Public Technology Research Project (No. 2016C31070).
Ultraflexible organic amplifier with biocompatible gel electrodes
Sekitani, Tsuyoshi; Yokota, Tomoyuki; Kuribara, Kazunori; Kaltenbrunner, Martin; Fukushima, Takanori; Inoue, Yusuke; Sekino, Masaki; Isoyama, Takashi; Abe, Yusuke; Onodera, Hiroshi; Someya, Takao
2016-01-01
In vivo electronic monitoring systems are promising technology to obtain biosignals with high spatiotemporal resolution and sensitivity. Here we demonstrate the fabrication of a biocompatible highly conductive gel composite comprising multi-walled carbon nanotube-dispersed sheet with an aqueous hydrogel. This gel composite exhibits admittance of 100 mS cm−2 and maintains high admittance even in a low-frequency range. On implantation into a living hypodermal tissue for 4 weeks, it showed a small foreign-body reaction compared with widely used metal electrodes. Capitalizing on the multi-functional gel composite, we fabricated an ultrathin and mechanically flexible organic active matrix amplifier on a 1.2-μm-thick polyethylene-naphthalate film to amplify (amplification factor: ∼200) weak biosignals. The composite was integrated to the amplifier to realize a direct lead epicardial electrocardiography that is easily spread over an uneven heart tissue. PMID:27125910
Waveguide Power-Amplifier Module for 80 to 150 GHz
NASA Technical Reports Server (NTRS)
Samoska, Lorene; Weinreb, Sander; Peralta, Alejandro
2006-01-01
A waveguide power-amplifier module capable of operating over the frequency range from 80 to 150 GHz has been constructed. The module comprises a previously reported power amplifier packaged in a waveguide housing that is compatible with WR-8 waveguides. (WR- 8 is a standard waveguide size for the nominal frequency range from 90 to 140 GHz.) The waveguide power-amplifier module is robust and can be bolted to test equipment and to other electronic circuits with which the amplifier must be connected for normal operation.
GaN Microwave DC-DC Converters
NASA Astrophysics Data System (ADS)
Ramos Franco, Ignacio
Increasing the operating frequency of switching converters can have a direct impact in the miniaturization and integration of power converters. The size of energy-storage passive components and the difficulty to integrate them with the rest of the circuitry is a major challenge in the development of a fully integrated power supply on a chip. The work presented in this thesis attempts to address some of the difficulties encountered in the design of high-frequency converters by applying concepts and techniques usually used in the design of high-efficiency power amplifiers and high-efficiency rectifiers at microwave frequencies. The main focus is in the analysis, design, and characterization of dc-dc converters operating at microwave frequencies in the low gigahertz range. The concept of PA-rectifier duality, where a high-efficiency power amplifier operates as a high-efficiency rectifier is investigated through non-linear simulations and experimentally validated. Additionally, the concept of a self-synchronous rectifier, where a transistor rectifier operates synchronously without the need of a RF source or driver is demonstrated. A theoretical analysis of a class-E self-synchronous rectifier is presented and validated through non-linear simulations and experiments. Two GaN class-E2 dc-dc converters operating at a switching frequency of 1 and 1.2 GHz are demonstrated. The converters achieve 80 % and 75 % dc-dc efficiency respectively and are among the highest-frequency and highest-efficiency reported in the literature. The application of the concepts established in the analysis of a self-synchronous rectifier to a power amplifier culminated in the development of an oscillating, self-synchronous class-E 2 dc-dc converter. Finally, a proof-of-concept fully integrated GaN MMIC class-E 2 dc-dc converter switching at 4.6 GHz is demonstrated for the first time to the best of our knowledge. The 3.8 mm x 2.6 mm chip contains distributed inductors and does not require any external components. The maximum measured dc-dc efficiency is approximately 45%.
Cross-correlation measurement of quantum shot noise using homemade transimpedance amplifiers
NASA Astrophysics Data System (ADS)
Hashisaka, Masayuki; Ota, Tomoaki; Yamagishi, Masakazu; Fujisawa, Toshimasa; Muraki, Koji
2014-05-01
We report a cross-correlation measurement system, based on a new approach, which can be used to measure shot noise in a mesoscopic conductor at milliKelvin temperatures. In contrast to other measurement systems in which high-speed low-noise voltage amplifiers are commonly used, our system employs homemade transimpedance amplifiers (TAs). The low input impedance of the TAs significantly reduces the crosstalk caused by unavoidable parasitic capacitance between wires. The TAs are designed to have a flat gain over a frequency band from 2 kHz to 1 MHz. Low-noise performance is attained by installing the TAs at a 4 K stage of a dilution refrigerator. Our system thus fulfills the technical requirements for cross-correlation measurements: low noise floor, high frequency band, and negligible crosstalk between two signal lines. Using our system, shot noise generated at a quantum point contact embedded in a quantum Hall system is measured. The good agreement between the obtained shot-noise data and theoretical predictions demonstrates the accuracy of the measurements.
NASA Technical Reports Server (NTRS)
Simons, Rainee N.; Wintucky, Edwin G.
2017-01-01
The paper presents the design, fabrication, and test results for a novel waveguide multimode directional coupler (MDC). The coupler fabricated from dissimilar frequency band waveguides, is capable of isolating power at the 2nd harmonic frequency from the fundamental power at the output port of a high power traveling-wave tube amplifier. The major advantage of the MDC is significantly lower insertion loss compared to a diplexer. The presentation slides for the paper that was approved is attached. The tracking number for the paper that was approved is TN 37015.
47 CFR 2.815 - External radio frequency power amplifiers.
Code of Federal Regulations, 2011 CFR
2011-10-01
... 47 Telecommunication 1 2011-10-01 2011-10-01 false External radio frequency power amplifiers. 2.815 Section 2.815 Telecommunication FEDERAL COMMUNICATIONS COMMISSION GENERAL FREQUENCY ALLOCATIONS AND RADIO TREATY MATTERS; GENERAL RULES AND REGULATIONS Marketing of Radio-frequency Devices § 2.815...
47 CFR 2.815 - External radio frequency power amplifiers.
Code of Federal Regulations, 2010 CFR
2010-10-01
... 47 Telecommunication 1 2010-10-01 2010-10-01 false External radio frequency power amplifiers. 2.815 Section 2.815 Telecommunication FEDERAL COMMUNICATIONS COMMISSION GENERAL FREQUENCY ALLOCATIONS AND RADIO TREATY MATTERS; GENERAL RULES AND REGULATIONS Marketing of Radio-frequency Devices § 2.815...
Resonant ultrasound spectrometer
Migliori, Albert; Visscher, William M.; Fisk, Zachary
1990-01-01
An ultrasound resonant spectrometer determines the resonant frequency spectrum of a rectangular parallelepiped sample of a high dissipation material over an expected resonant response frequency range. A sample holder structure grips corners of the sample between piezoelectric drive and receive transducers. Each transducer is mounted on a membrane for only weakly coupling the transducer to the holder structure and operatively contacts a material effective to remove system resonant responses at the transducer from the expected response range. i.e., either a material such as diamond to move the response frequencies above the range or a damping powder to preclude response within the range. A square-law detector amplifier receives the response signal and retransmits the signal on an isolated shield of connecting cabling to remove cabling capacitive effects. The amplifier also provides a substantially frequency independently voltage divider with the receive transducer. The spectrometer is extremely sensitive to enable low amplitude resonance to be detected for use in calculating the elastic constants of the high dissipation sample.
Frequency tunable electronic sources working at room temperature in the 1 to 3 THz band
NASA Astrophysics Data System (ADS)
Maestrini, Alain; Mehdi, Imran; Siles, José V.; Lin, Robert; Lee, Choonsup; Chattopadhyay, Goutam; Pearson, John; Siegel, Peter
2012-10-01
Compact, room temperature terahertz sources are much needed in the 1 to 3 THz band for developing multi-pixel heterodyne receivers for astrophysics and planetary science or for building short-range high spatial resolution THz imaging systems able to see through low water content and non metallic materials, smoke or dust for a variety of applications ranging from the inspection of art artifacts to the detection of masked or concealed objects. All solid-sate electronic sources based on a W-band synthesizer followed by a high-power W-band amplifier and a cascade of Schottky diode based THz frequency multipliers are now capable of producing more than 1 mW at 0.9THz, 50 μW at 2 THz and 18 μW at 2.6 THz without the need of any cryogenic system. These sources are frequency agile and have a relative bandwidth of 10 to 15%, limited by the high power W-band amplifiers. The paper will present the latest developments of this technology and its perspective in terms of frequency range, bandwidth and power.
Study on the amplifier experiment of end-pumped long pulse slab laser
NASA Astrophysics Data System (ADS)
Jin, Quanwei; Chen, Xiaoming; Jiang, JianFeng; Pang, Yu; Tong, Lixin; Li, Mi; Hu, Hao; Lv, Wenqiang; Gao, Qingsong; Tang, Chun
2018-03-01
The amplifier experiment research of end-pumped long pulse slab laser is developed, the results of out-put energy, optical-optical efficiency and pulse waveform are obtained at different experiment conditions, such as peak pumped power, amplifier power and pumped pulse width. The seed laser is CW fundamental transverse-mode operation fiber laser, the laser medium is composited Nd:YAG slab. Under end-pumped and the 2 passes, the laser obtain 7.65J out-put energy and 43.1% optical-optical efficiency with 45kW peak-pumped power and 386μs pump pulse width. The experimental results provide the basic for the optimization design to high frequency, high energy and high beam-quality slab lasers.
Matched wideband low-noise amplifiers for radio astronomy.
Weinreb, S; Bardin, J; Mani, H; Jones, G
2009-04-01
Two packaged low noise amplifiers for the 0.3-4 GHz frequency range are described. The amplifiers can be operated at temperatures of 300-4 K and achieve noise temperatures in the 5 K range (<0.1 dB noise figure) at 15 K physical temperature. One amplifier utilizes commercially available, plastic-packaged SiGe transistors for first and second stages; the second amplifier is identical except it utilizes an experimental chip transistor as the first stage. Both amplifiers use resistive feedback to provide input reflection coefficient S11<-10 dB over a decade bandwidth with gain over 30 dB. The amplifiers can be used as rf amplifiers in very low noise radio astronomy systems or as i.f. amplifiers following superconducting mixers operating in the millimeter and submillimeter frequency range.
NASA Astrophysics Data System (ADS)
Luo, Yi; Zhang, Hanwei; Wang, Xiaolin; Su, Rongtao; Ma, Pengfei; Zhou, Pu; Jiang, Zongfu
2017-10-01
In the pulsed fiber amplifiers with repetition frequency of several tens kHz, amplified spontaneous emission (ASE) is easy to build up because of the low repetition frequency and weak pulse signal. The ASE rises the difficulty to amplify the weak pulse signal effectively. We have demonstrated an all-fiber preamplifier stage structure to amplify a 40 kHz, 10 ns bandwidth (FWHM) weak pulse signal (299 μW) with center wavelength of 1062 nm. Compared synchronous pulse pump with continuous wave(CW) pump, the results indicate that synchronous pulse pump shows the better capability of increasing the output power than CW pump. In the condition of the same pump power, the output power of synchronous pulse pump is twice as high as CW pump. In order to suppress ASE, a longer gain fiber is utilized to reabsorb the ASE in which the wavelength is shorter than 1062nm. We amplified weak pulse signal via 0.8 m and 2.1 m gain fiber in synchronous pulse pump experiments respectively, and more ASE in the output spectra are observed in the 0.8 m gain fiber system. Due to the weaker ASE and consequent capability of higher pump power, the 2.1 m gain fiber is capable to achieve higher output power than shorter fiber. The output power of 2.1 m gain fiber case is limited by pump power.
Long-pulse-width narrow-bandwidth solid state laser
Dane, C. Brent; Hackel, Lloyd A.
1997-01-01
A long pulse laser system emits 500-1000 ns quasi-rectangular pulses at 527 nm with near diffraction-limited divergence and near transform-limited bandwidth. The system consists of one or more flashlamp-pumped Nd:glass zig-zag amplifiers, a very low threshold stimulated-Brillouin-scattering (SBS) phase conjugator system, and a free-running single frequency Nd:YLF master oscillator. Completely passive polarization switching provides eight amplifier gain passes. Multiple frequency output can be generated by using SBS cells having different pressures of a gaseous SBS medium or different SBS materials. This long pulse, low divergence, narrow-bandwidth, multi-frequency output laser system is ideally suited for use as an illuminator for long range speckle imaging applications. Because of its high average power and high beam quality, this system has application in any process which would benefit from a long pulse format, including material processing and medical applications.
Long-pulse-width narrow-bandwidth solid state laser
Dane, C.B.; Hackel, L.A.
1997-11-18
A long pulse laser system emits 500-1000 ns quasi-rectangular pulses at 527 nm with near diffraction-limited divergence and near transform-limited bandwidth. The system consists of one or more flashlamp-pumped Nd:glass zig-zag amplifiers, a very low threshold stimulated-Brillouin-scattering (SBS) phase conjugator system, and a free-running single frequency Nd:YLF master oscillator. Completely passive polarization switching provides eight amplifier gain passes. Multiple frequency output can be generated by using SBS cells having different pressures of a gaseous SBS medium or different SBS materials. This long pulse, low divergence, narrow-bandwidth, multi-frequency output laser system is ideally suited for use as an illuminator for long range speckle imaging applications. Because of its high average power and high beam quality, this system has application in any process which would benefit from a long pulse format, including material processing and medical applications. 5 figs.
Pyrotechnic shock measurement and data analysis requirements
NASA Technical Reports Server (NTRS)
Albers, L.
1975-01-01
A study of laboratory measurement and analysis of pyrotechnic shock prompted by a discrepancy in preliminary Mariner Jupiter/Saturn shock test data is reported. It is shown that before generating shock response plots from any recorded pyrotechnic event, a complete review of each instrumentation and analysis system must be made. In addition, the frequency response capability of the tape recorder used should be as high as possible; the discrepancies in the above data were due to inadequate frequency response in the FM tape recorders. The slew rate of all conditioning amplifiers and input converters must be high enough to prevent signal distortion at maximum input voltage; amplifier ranges should be selected so that the input pulse is approximately 50% of full scale; the Bessel response type should be chosen for digital shock analysis if antialiasing filters are employed; and transducer selection must consider maximum acceleration limit, mounted resonance frequency, flat clean mounting surfaces, base bending sensitivity, and proper torque.
Pseudo-differential CMOS analog front-end circuit for wide-bandwidth optical probe current sensor
NASA Astrophysics Data System (ADS)
Uekura, Takaharu; Oyanagi, Kousuke; Sonehara, Makoto; Sato, Toshiro; Miyaji, Kousuke
2018-04-01
In this paper, we present a pseudo-differential analog front-end (AFE) circuit for a novel optical probe current sensor (OPCS) aimed for high-frequency power electronics. It employs a regulated cascode transimpedance amplifier (RGC-TIA) to achieve a high gain and a large bandwidth without using an extremely high performance operational amplifier. The AFE circuit is designed in a 0.18 µm standard CMOS technology achieving a high transimpedance gain of 120 dB Ω and high cut off frequency of 16 MHz. The measured slew rate is 70 V/µs and the input referred current noise is 1.02 pA/\\sqrt{\\text{Hz}} . The magnetic resolution and bandwidth of OPCS are estimated to be 1.29 mTrms and 16 MHz, respectively; the bandwidth is higher than that of the reported Hall effect current sensor.
NASA Astrophysics Data System (ADS)
Phan, Hoang-Phuong; Nguyen, Tuan-Khoa; Dinh, Toan; Ina, Ginnosuke; Kermany, Atieh Ranjbar; Qamar, Afzaal; Han, Jisheng; Namazu, Takahiro; Maeda, Ryutaro; Dao, Dzung Viet; Nguyen, Nam-Trung
2017-04-01
Strain engineering has attracted great attention, particularly for epitaxial films grown on a different substrate. Residual strains of SiC have been widely employed to form ultra-high frequency and high Q factor resonators. However, to date, the highest residual strain of SiC was reported to be limited to approximately 0.6%. Large strains induced into SiC could lead to several interesting physical phenomena, as well as significant improvement of resonant frequencies. We report an unprecedented nanostrain-amplifier structure with an ultra-high residual strain up to 8% utilizing the natural residual stress between epitaxial 3C-SiC and Si. In addition, the applied strain can be tuned by changing the dimensions of the amplifier structure. The possibility of introducing such a controllable and ultra-high strain will open the door to investigating the physics of SiC in large strain regimes and the development of ultra sensitive mechanical sensors.
100 J UV glass laser for dynamic compression research
NASA Astrophysics Data System (ADS)
Zweiback, J.; Fochs, S. F.; Bromage, J.; Broege, D.; Cuffney, R.; Currier, Z.; Dorrer, C.; Ehrich, B.; Engler, J.; Guardalben, M.; Kephalos, N.; Marozas, J.; Roides, R.; Zuegel, J.
2017-02-01
A frequency tripled, Nd:Glass laser has been constructed and installed at the Dynamic Compression Sector located at the Advanced Photon Source. This 100-J laser will be used to drive shocks in condensed matter which will then be interrogated by the facility x-ray beam. The laser is designed for reliable operation, utilizing proven designs for all major subsystems. A fiber front-end provides arbitrarily shaped pulses to the amplifier chain. A diode-pumped Nd:glass regenerative amplifier is followed by a four-pass, flashlamp- pumped rod amplifier. The regenerative amplifier produces up to 20 mJ with better than 1% RMS stability. The passively multiplexed four-pass amplifier produces up to 2 J. The final amplifier uses a 15-cm Nd:glass disk amplifier in a six-pass configuration. Over 200 J of infrared energy is produced by the disk amplifier. A KDP Type-II/Type-II frequency tripler configuration, utilizing a dual tripler, converts the 1053-nm laser output to a wavelength of 351 nm and the ultraviolet beam is image relayed to the target chamber. Output energy stability is better than 3%. Smoothing by Spectral Dispersion and polarization smoothing have been optimized to produce a highly uniform focal spot. A distributed phase plate and aspheric lens produce a farfield spot with a measured uniformity of 8.2% RMS. Custom control software collects all data and provides the operator an intuitive interface to operate and maintain the laser.
Apparatus and method for microwave processing of materials
Johnson, Arvid C.; Lauf, Robert J.; Bible, Don W.; Markunas, Robert J.
1996-01-01
A variable frequency microwave heating apparatus (10) designed to allow modulation of the frequency of the microwaves introduced into a furnace cavity (34) for testing or other selected applications. The variable frequency heating apparatus (10) is used in the method of the present invention to monitor the resonant processing frequency within the furnace cavity (34) depending upon the material, including the state thereof, from which the workpiece (36) is fabricated. The variable frequency microwave heating apparatus (10) includes a microwave signal generator (12) and a high-power microwave amplifier (20) or a microwave voltage-controlled oscillator (14). A power supply (22) is provided for operation of the high-power microwave oscillator (14) or microwave amplifier (20). A directional coupler (24) is provided for detecting the direction and amplitude of signals incident upon and reflected from the microwave cavity (34). A first power meter (30) is provided for measuring the power delivered to the microwave furnace (32). A second power meter (26) detects the magnitude of reflected power. Reflected power is dissipated in the reflected power load (28).
McNeilly, D.R.
1984-01-01
A lock-in amplifier is provided which allows detection of a signal buried in noise without preprocessing of the input signal. An analog signal multiplier is used to obtain a dc output which is the product of the signal being detected and a high-purity sine wave signal. A reference signal of a known selectable frequency is applied to a sine-wave generator to generate the sine wave of the same frequency. The sine wave is applied to a multiplier through a phase shift arrangement to allow the detection of both amplitude of the detected signal and the phases relative to the reference signal. The multiplier output is filtered by a low-pass filter to eliminate unwanted frequency components from the output signal.
McNeilly, David R.
1985-01-01
A lock-in amplifier is provided which allows detection of a signal buried in noise without preprocessing of the input signal. An analog signal multiplier is used to obtain a dc output which is the product of the signal being detected and a high-purity sine wave signal. A reference signal of a known selectable frequency is applied to a sine-wave generator to generate the sine wave of the same frequency. The sine wave is applied to a multiplier through a phase shift arrangement to allow the detection of both amplitude of the detected signal and the phases relative to the reference signal. The multiplier output is filtered by a low-pass filter to eliminate unwanted frequency components from the output signal.
A Novel Application of Fourier Transform Spectroscopy with HEMT Amplifiers at Microwave Frequencies
NASA Technical Reports Server (NTRS)
Wilkinson, David T.; Page, Lyman
1995-01-01
The goal was to develop cryogenic high-electron-mobility transistor (HEMT) based radiometers and use them to measure the anisotropy in the cosmic microwave background (CMB). In particular, a novel Fourier transform spectrometer (FTS) built entirely of waveguide components would be developed. A dual-polarization Ka-band HEMT radiometer and a similar Q-band radiometer were built. In a series of measurements spanning three years made from a ground-based site in Saskatoon, SK, the amplitude, frequency spectrum, and spatial frequency spectrum of the anisotropy were measured. A prototype Ka-band FTS was built and tested, and a simplified version is proposed for the MAP satellite mission. The 1/f characteristics of HEMT amplifiers were quantified using correlation techniques.
NASA Technical Reports Server (NTRS)
Lancaster, D. G.; Richter, D.; Curl, R. F.; Tittel, F. K.; Goldberg, L.; Koplow, J.
1999-01-01
We report the generation of up to 0.7 mW of narrow-linewidth (<60-MHz) radiation at 3.3 micrometers by difference frequency mixing of a Nd:YAG-seeded 1.6-W Yb fiber amplifier and a 1.5-micrometers diode-laser-seeded 0.6-W Er/Yb fiber amplifier in periodically poled LiNbO3. A conversion efficiency of 0.09%/W (0.47 mWW-2 cm-1) was achieved. A room-air CH4 spectrum acquired with a compact 80-m multipass cell and a dual-beam spectroscopic configuration indicates an absorption sensitivity of +/-2.8 x 10(-5) (+/-1 sigma), corresponding to a sub-parts-in-10(9) (ppb) CH4 sensitivity (0.8 ppb).
Single-mode single-frequency high peak power all-fiber MOPA at 1550 nm
NASA Astrophysics Data System (ADS)
Kotov, L. V.; Likhachev, M. E.; Bubnov, M. M.; Paramonov, V. M.; Belovolov, M. I.; Lipatov, D. S.; Guryanov, A. N.
2014-10-01
In this Report, we present a record-high-peak-power single-frequency master oscillator power amplifier (MOPA) system based on a newly developed double-clad large-mode-area Yb-free Er-doped fiber (DC-LMA-EDF). A fiber Bragg grating wavelength-stabilized fiber-coupled diode laser at λ=1551 nm with ~2 MHz spectral width was used as the master oscillator. Its radiation was externally modulated with a 5 kHz repetition rate and 92 ns pulse duration and then amplified in a core-pumped Er-doped fiber amplifier up to an average power of 4 mW. The amplified spontaneous emission (ASE) generated at the last preamplifier stage was suppressed by a narrow-band (0.7 nm) DWDM filter. The last MOPA stage was based on the recently developed single-mode DC-LMA-EDF with a mode field diameter of 25 microns and pump clad-absorption of 3 dB/m at λ=980 nm. The pump and the signal were launched into this fiber through a commercial pump combiner in a co-propagating amplifier scheme. At first, we used a 3-m long DC-LMAEDF. In such configuration, a peak power of 800 W was achieved at the output of the amplifier together with a ~ 12 % pump conversion slope efficiency. Further power scaling was limited by SBS. After that we shortened the fiber length to 1 m. As a result, owing to large unabsorbed pump power, the efficiency decreased to ~5 %. However, a peak power of more than 3.5 kW was obtained before the SBS threshold. In this case, the pulse shape changed and its duration decreased to ~60 ns owing to inversion depletion after propagation of the forward front of the pulse. To the best of our knowledge, the peak power of more than 3.5 kW reported here is the highest value ever published for a single-frequency single-mode silica-based fiber laser system operating near λ=1550 nm.
SiGe/Si Monolithically Integrated Amplifier Circuits
NASA Technical Reports Server (NTRS)
Katehi, Linda P. B.; Bhattacharya, Pallab
1998-01-01
With recent advance in the epitaxial growth of silicon-germanium heterojunction, Si/SiGe HBTs with high f(sub max) and f(sub T) have received great attention in MMIC applications. In the past year, technologies for mesa-type Si/SiGe HBTs and other lumped passive components with high resonant frequencies have been developed and well characterized for circuit applications. By integrating the micromachined lumped passive elements into HBT fabrication, multi-stage amplifiers operating at 20 GHz have been designed and fabricated.
Variable frequency microwave furnace system
Bible, Don W.; Lauf, Robert J.
1994-01-01
A variable frequency microwave furnace system (10) designed to allow modulation of the frequency of the microwaves introduced into a furnace cavity (34) for testing or other selected applications. The variable frequency microwave furnace system (10) includes a microwave signal generator (12) or microwave voltage-controlled oscillator (14) for generating a low-power microwave signal for input to the microwave furnace. A first amplifier (18) may be provided to amplify the magnitude of the signal output from the microwave signal generator (12) or the microwave voltage-controlled oscillator (14). A second amplifier (20) is provided for processing the signal output by the first amplifier (18). The second amplifier (20) outputs the microwave signal input to the furnace cavity (34). In the preferred embodiment, the second amplifier (20) is a traveling-wave tube (TWT). A power supply (22) is provided for operation of the second amplifier (20). A directional coupler (24) is provided for detecting the direction of a signal and further directing the signal depending on the detected direction. A first power meter (30) is provided for measuring the power delivered to the microwave furnace (32). A second power meter (26) detects the magnitude of reflected power. Reflected power is dissipated in the reflected power load (28).
High voltage electrical amplifier having a short rise time
Christie, David J.; Dallum, Gregory E.
1991-01-01
A circuit, comprising an amplifier and a transformer is disclosed that produces a high power pulse having a fast response time, and that responds to a digital control signal applied through a digital-to-analog converter. The present invention is suitable for driving a component such as an electro-optic modulator with a voltage in the kilovolt range. The circuit is stable at high frequencies and during pulse transients, and its impedance matching circuit matches the load impedance with the output impedance. The preferred embodiment comprises an input stage compatible with high-speed semiconductor components for amplifying the voltage of the input control signal, a buffer for isolating the input stage from the output stage; and a plurality of current amplifiers connected to the buffer. Each current amplifier is connected to a field effect transistor (FET), which switches a high voltage power supply to a transformer which then provides an output terminal for driving a load. The transformer comprises a plurality of transmission lines connected to the FETs and the load. The transformer changes the impedance and voltage of the output. The preferred embodiment also comprises a low voltage power supply for biasing the FETs at or near an operational voltage.
Radio frequency power load and associated method
NASA Technical Reports Server (NTRS)
Sims, III, William Herbert (Inventor); Chavers, Donald Gregory (Inventor); Richeson, James J. (Inventor)
2010-01-01
A radio frequency power load and associated method. A radio frequency power load apparatus includes a container and a fluid having an ion source therein, the fluid being contained in the container. Two conductors are immersed in the fluid. A radio frequency transmission system includes a radio frequency transmitter, a radio frequency amplifier connected to the transmitter and a radio frequency power load apparatus connected to the amplifier. The apparatus includes a fluid having an ion source therein, and two conductors immersed in the fluid. A method of dissipating power generated by a radio frequency transmission system includes the steps of: immersing two conductors of a radio frequency power load apparatus in a fluid having an ion source therein; and connecting the apparatus to an amplifier of the transmission system.
K-Band Si/SiGe HBT MMIC Amplifiers Using Lumped Passive Components with a Micromachined Structure
NASA Technical Reports Server (NTRS)
Lu, Liang-Hung; Rieh, Jae-Sung; Bhattacharya, Pallab; Katechi, Linda P. B.; Croke, E. T.; Ponchak, George E.; Alterovitz, Samuel A.
2000-01-01
Using Si/SiGe heterojunction bipolar transistors with a maximum oscillation frequency of 52 GHz and a novel structure for passive components, a two-stage K-band lumped-element amplifier has been designed and fabricated on high-resistivity Si substrates. The chip size including biasing and RF chokes is 0.92 x 0.67 sq mm.
NASA Astrophysics Data System (ADS)
Coetzee, R. S.; Zheng, X.; Fregnani, L.; Laurell, F.; Pasiskevicius, V.
2018-06-01
A high-energy, ns, narrow-linewidth optical parametric oscillator and amplifier system based on large-aperture periodically poled Rb:KTP is presented. The 2 µm seed source is a singly resonant OPO locked with a transversely chirped volume Bragg grating, allowing a wavelength tuning of 21 nm and output linewidth of 0.56 nm. A maximum output energy of 52 mJ and conversion efficiency of 36% was obtained from the amplifier for a pump energy of 140 mJ. The high-energy and the robust and narrow dual-wavelength spectra obtained make this system an ideal pump source for difference frequency generation-based THz generation schemes.
Design and analysis of a novel mechanical loading machine for dynamic in vivo axial loading
NASA Astrophysics Data System (ADS)
Macione, James; Nesbitt, Sterling; Pandit, Vaibhav; Kotha, Shiva
2012-02-01
This paper describes the construction of a loading machine for performing in vivo, dynamic mechanical loading of the rodent forearm. The loading machine utilizes a unique type of electromagnetic actuator with no mechanically resistive components (servotube), allowing highly accurate loads to be created. A regression analysis of the force created by the actuator with respect to the input voltage demonstrates high linear correlation (R2 = 1). When the linear correlation is used to create dynamic loading waveforms in the frequency (0.5-10 Hz) and load (1-50 N) range used for in vivo loading, less than 1% normalized root mean square error (NRMSE) is computed. Larger NRMSE is found at increased frequencies, with 5%-8% occurring at 40 Hz, and reasons are discussed. Amplifiers (strain gauge, linear voltage displacement transducer (LVDT), and load cell) are constructed, calibrated, and integrated, to allow well-resolved dynamic measurements to be recorded at each program cycle. Each of the amplifiers uses an active filter with cutoff frequency at the maximum in vivo loading frequencies (50 Hz) so that electronic noise generated by the servo drive and actuator are reduced. The LVDT and load cell amplifiers allow evaluation of stress-strain relationships to determine if in vivo bone damage is occurring. The strain gauge amplifier allows dynamic force to strain calibrations to occur for animals of different sex, age, and strain. Unique features are integrated into the loading system, including a weightless mode, which allows the limbs of anesthetized animals to be quickly positioned and removed. Although the device is constructed for in vivo axial bone loading, it can be used within constraints, as a general measurement instrument in a laboratory setting.
Design and analysis of a novel mechanical loading machine for dynamic in vivo axial loading.
Macione, James; Nesbitt, Sterling; Pandit, Vaibhav; Kotha, Shiva
2012-02-01
This paper describes the construction of a loading machine for performing in vivo, dynamic mechanical loading of the rodent forearm. The loading machine utilizes a unique type of electromagnetic actuator with no mechanically resistive components (servotube), allowing highly accurate loads to be created. A regression analysis of the force created by the actuator with respect to the input voltage demonstrates high linear correlation (R(2) = 1). When the linear correlation is used to create dynamic loading waveforms in the frequency (0.5-10 Hz) and load (1-50 N) range used for in vivo loading, less than 1% normalized root mean square error (NRMSE) is computed. Larger NRMSE is found at increased frequencies, with 5%-8% occurring at 40 Hz, and reasons are discussed. Amplifiers (strain gauge, linear voltage displacement transducer (LVDT), and load cell) are constructed, calibrated, and integrated, to allow well-resolved dynamic measurements to be recorded at each program cycle. Each of the amplifiers uses an active filter with cutoff frequency at the maximum in vivo loading frequencies (50 Hz) so that electronic noise generated by the servo drive and actuator are reduced. The LVDT and load cell amplifiers allow evaluation of stress-strain relationships to determine if in vivo bone damage is occurring. The strain gauge amplifier allows dynamic force to strain calibrations to occur for animals of different sex, age, and strain. Unique features are integrated into the loading system, including a weightless mode, which allows the limbs of anesthetized animals to be quickly positioned and removed. Although the device is constructed for in vivo axial bone loading, it can be used within constraints, as a general measurement instrument in a laboratory setting.
Wafer-scalable high-performance CVD graphene devices and analog circuits
NASA Astrophysics Data System (ADS)
Tao, Li; Lee, Jongho; Li, Huifeng; Piner, Richard; Ruoff, Rodney; Akinwande, Deji
2013-03-01
Graphene field effect transistors (GFETs) will serve as an essential component for functional modules like amplifier and frequency doublers in analog circuits. The performance of these modules is directly related to the mobility of charge carriers in GFETs, which per this study has been greatly improved. Low-field electrostatic measurements show field mobility values up to 12k cm2/Vs at ambient conditions with our newly developed scalable CVD graphene. For both hole and electron transport, fabricated GFETs offer substantial amplification for small and large signals at quasi-static frequencies limited only by external capacitances at high-frequencies. GFETs biased at the peak transconductance point featured high small-signal gain with eventual output power compression similar to conventional transistor amplifiers. GFETs operating around the Dirac voltage afforded positive conversion gain for the first time, to our knowledge, in experimental graphene frequency doublers. This work suggests a realistic prospect for high performance linear and non-linear analog circuits based on the unique electron-hole symmetry and fast transport now accessible in wafer-scalable CVD graphene. *Support from NSF CAREER award (ECCS-1150034) and the W. M. Keck Foundation are appreicated.
A model for phase noise generation in amplifiers.
Tomlin, T D; Fynn, K; Cantoni, A
2001-11-01
In this paper, a model is presented for predicting the phase modulation (PM) and amplitude modulation (AM) noise in bipolar junction transistor (BJT) amplifiers. The model correctly predicts the dependence of phase noise on the signal frequency (at a particular carrier offset frequency), explains the noise shaping of the phase noise about the signal frequency, and shows the functional dependence on the transistor parameters and the circuit parameters. Experimental studies on common emitter (CE) amplifiers have been used to validate the PM noise model at carrier frequencies between 10 and 100 MHz.
Ju, Jinchuan; Zhang, Jun; Qi, Zumin; Yang, Jianhua; Shu, Ting; Zhang, Jiande; Zhong, Huihuang
2016-01-01
The radio-frequency breakdown due to ultrahigh electric field strength essentially limits power handling capability of an individual high power microwave (HPM) generator, and this issue becomes more challenging for high frequency bands. Coherent power combining therefore provides an alternative approach to achieve an equivalent peak power of the order of ∼100 GW, which consequently provides opportunities to explore microwave related physics at extremes. The triaxial klystron amplifier (TKA) is a promising candidate for coherent power combing in high frequency bands owing to its intrinsic merit of high power capacity, nevertheless phase-locked long pulse radiation from TKA has not yet been obtained experimentally as the coaxial structure of TKA can easily lead to self-excitation of parasitic modes. In this paper, we present investigations into an X-band TKA capable of producing 1.1 GW HPMs with pulse duration of about 103 ns at the frequency of 9.375 GHz in experiment. Furthermore, the shot-to-shot fluctuation standard deviation of the phase shifts between the input and output microwaves is demonstrated to be less than 10°. The reported achievements open up prospects for accomplishing coherent power combining of X-band HPMs in the near future, and might also excite new development interests concerning high frequency TKAs. PMID:27481661
Ju, Jinchuan; Zhang, Jun; Qi, Zumin; Yang, Jianhua; Shu, Ting; Zhang, Jiande; Zhong, Huihuang
2016-08-02
The radio-frequency breakdown due to ultrahigh electric field strength essentially limits power handling capability of an individual high power microwave (HPM) generator, and this issue becomes more challenging for high frequency bands. Coherent power combining therefore provides an alternative approach to achieve an equivalent peak power of the order of ∼100 GW, which consequently provides opportunities to explore microwave related physics at extremes. The triaxial klystron amplifier (TKA) is a promising candidate for coherent power combing in high frequency bands owing to its intrinsic merit of high power capacity, nevertheless phase-locked long pulse radiation from TKA has not yet been obtained experimentally as the coaxial structure of TKA can easily lead to self-excitation of parasitic modes. In this paper, we present investigations into an X-band TKA capable of producing 1.1 GW HPMs with pulse duration of about 103 ns at the frequency of 9.375 GHz in experiment. Furthermore, the shot-to-shot fluctuation standard deviation of the phase shifts between the input and output microwaves is demonstrated to be less than 10°. The reported achievements open up prospects for accomplishing coherent power combining of X-band HPMs in the near future, and might also excite new development interests concerning high frequency TKAs.
A Stimulated Raman Scattering CMOS Pixel Using a High-Speed Charge Modulator and Lock-in Amplifier.
Lioe, De Xing; Mars, Kamel; Kawahito, Shoji; Yasutomi, Keita; Kagawa, Keiichiro; Yamada, Takahiro; Hashimoto, Mamoru
2016-04-13
A complementary metal-oxide semiconductor (CMOS) lock-in pixel to observe stimulated Raman scattering (SRS) using a high speed lateral electric field modulator (LEFM) for photo-generated charges and in-pixel readout circuits is presented. An effective SRS signal generated after the SRS process is very small and needs to be extracted from an extremely large offset due to a probing laser signal. In order to suppress the offset components while amplifying high-frequency modulated small SRS signal components, the lock-in pixel uses a high-speed LEFM for demodulating the SRS signal, resistor-capacitor low-pass filter (RC-LPF) and switched-capacitor (SC) integrator with a fully CMOS differential amplifier. AC (modulated) components remained in the RC-LPF outputs are eliminated by the phase-adjusted sampling with the SC integrator and the demodulated DC (unmodulated) components due to the SRS signal are integrated over many samples in the SC integrator. In order to suppress further the residual offset and the low frequency noise (1/f noise) components, a double modulation technique is introduced in the SRS signal measurements, where the phase of high-frequency modulated laser beam before irradiation of a specimen is modulated at an intermediate frequency and the demodulation is done at the lock-in pixel output. A prototype chip for characterizing the SRS lock-in pixel is implemented and a successful operation is demonstrated. The reduction effects of residual offset and 1/f noise components are confirmed by the measurements. A ratio of the detected small SRS to offset a signal of less than 10(-)⁵ is experimentally demonstrated, and the SRS spectrum of a Benzonitrile sample is successfully observed.
Laser Research and Development Studies for Laser Guide Star Systems
DOE Office of Scientific and Technical Information (OSTI.GOV)
Pennington, D.; Beach, R.; Ebbers, C.
2000-02-23
In this paper we consider two CW solid state laser approaches to a 589 nm LGS system. Both are based on the technique of sum-frequency generation, but differ in the cavity architecture. Both technologies are very promising and are worth of further consideration. This preliminary proposal is intended to encompass both designs. A down select shall be performed early in the project execution to focus on the most promising option. The two design options consist of: (1) A dual-frequency resonator with intra-cavity doubling in LB0 offers the promise of a simple architecture and may scale more easily to high power.more » This design has been shown to be highly reliable, efficient and high power when used in frequency-doubled Nd:YAG lasers for programs at LLNL and in commercial products. The challenge in this design is the demonstration of a high power13 18 nm oscillator with adequate suppression of the 1064 nm line. (2) A MOPA based design uses commercial low power oscillators to produce both wavelengths, then amplifies the wavelengths before doubling. This design requires the demonstration of a 1318 nm amplifier, though the design is scaled from a kW CW amplifier already delivered to a customer at a different wavelength. The design must also demonstrate high power scaling of sum-frequency generation in the relatively new nonlinear material, PPLN. The first step in the process would be to further evaluate the two conceptual options for technical feasibility, cost and constructability. Then a down selection to one design would be conducted. Finally, R&D on that design would then proceed. Minimal testing should be required for this selection. The majority of the funding received would be allocated to development of the design selected.« less
Single frequency 1560nm Er:Yb fiber amplifier with 207W output power and 50.5% slope efficiency
NASA Astrophysics Data System (ADS)
Creeden, Daniel; Pretorius, Herman; Limongelli, Julia; Setzler, Scott D.
2016-03-01
High power fiber lasers/amplifiers in the 1550nm spectral region have not scaled as rapidly as Yb-, Tm-, or Ho-doped fibers. This is primarily due to the low gain of the erbium ion. To overcome the low pump absorption, Yb is typically added as a sensitizer. Although this helps the pump absorption, it also creates a problem with parasitic lasing of the Yb ions under strong pumping conditions, which generally limits output power. Other pump schemes have shown high efficiency through resonant pumping of erbium only without the need for Yb as a sensitizer [1-2]. Although this can enable higher power scaling due to a decrease in the thermal loading, resonant pumping methods require long fiber lengths due to pump bleaching, which may limit the power scaling which can be achieved for single frequency output. By using an Er:Yb fiber and pumping in the minima of the Yb pump absorption at 940nm, we have been able to simultaneously generate high power, single frequency output at 1560nm while suppressing the 1-micron ASE and enabling higher efficiency compared to pumping at the absorption peak at 976nm. We have demonstrated single frequency amplification (540Hz linewidth) to 207W average output power with 49.3% optical efficiency (50.5% slope efficiency) in an LMA Er:Yb fiber. We believe this is the highest reported efficiency from a high power 9XXnm pumped Er:Yb-doped fiber amplifier. This is significantly more efficient that the best-reported efficiency for high power Er:Yb doped fibers, which, to-date, has been limited to ~41% slope efficiency [3].
Frequency-Offset Cartesian Feedback Based on Polyphase Difference Amplifiers
Zanchi, Marta G.; Pauly, John M.; Scott, Greig C.
2010-01-01
A modified Cartesian feedback method called “frequency-offset Cartesian feedback” and based on polyphase difference amplifiers is described that significantly reduces the problems associated with quadrature errors and DC-offsets in classic Cartesian feedback power amplifier control systems. In this method, the reference input and feedback signals are down-converted and compared at a low intermediate frequency (IF) instead of at DC. The polyphase difference amplifiers create a complex control bandwidth centered at this low IF, which is typically offset from DC by 200–1500 kHz. Consequently, the loop gain peak does not overlap DC where voltage offsets, drift, and local oscillator leakage create errors. Moreover, quadrature mismatch errors are significantly attenuated in the control bandwidth. Since the polyphase amplifiers selectively amplify the complex signals characterized by a +90° phase relationship representing positive frequency signals, the control system operates somewhat like single sideband (SSB) modulation. However, the approach still allows the same modulation bandwidth control as classic Cartesian feedback. In this paper, the behavior of the polyphase difference amplifier is described through both the results of simulations, based on a theoretical analysis of their architecture, and experiments. We then describe our first printed circuit board prototype of a frequency-offset Cartesian feedback transmitter and its performance in open and closed loop configuration. This approach should be especially useful in magnetic resonance imaging transmit array systems. PMID:20814450
Preamplifiers for non-contact capacitive biopotential measurements.
Peng, GuoChen; Ignjatovic, Zeljko; Bocko, Mark F
2013-01-01
Non-contact biopotential sensing is an attractive measurement strategy for a number of health monitoring applications, primarily the ECG and the EEG. In all such applications a key technical challenge is the design of a low-noise trans-impedance preamplifier for the typically low-capacitance, high source impedance sensing electrodes. In this paper, we compare voltage and charge amplifier designs in terms of their common mode rejection ratio, noise performance, and frequency response. Both amplifier types employ the same operational-transconductance amplifier (OTA), which was fabricated in a 0.35 um CMOS process. The results show that a charge amplifier configuration has advantages for small electrode-to-subject coupling capacitance values (less than 10 pF--typical of noncontact electrodes) and that the voltage amplifier configuration has advantages for electrode capacitances above 10 pF.
Low-Noise Amplifier for 100 to 180 GHz
NASA Technical Reports Server (NTRS)
Kangaslahti, Pekka; Pukala, David; Fung, King Man; Gaier, Todd; Mei, Xiaobing; Lai, Richard; Deal, William
2009-01-01
A three-stage monolithic millimeter-wave integrated-circuit (MMIC) amplifier designed to exhibit low noise in operation at frequencies from about 100 to somewhat above 180 GHz has been built and tested. This is a prototype of broadband amplifiers that have potential utility in diverse applications, including measurement of atmospheric temperature and humidity and millimeter-wave imaging for inspecting contents of opaque containers. Figure 1 depicts the amplifier as it appears before packaging. Figure 2 presents data from measurements of the performance of the amplifier as packaged in a WR-05 waveguide and tested in the frequency range from about 150 to about 190 GHz. The amplifier exhibited substantial gain throughout this frequency range. Especially notable is the fact that at 165 GHz, the noise figure was found to be 3.7 dB, and the noise temperature was found to be 370 K: This is less than half the noise temperature of the prior state of the art.
NASA Astrophysics Data System (ADS)
Ding, Yaqian; Zhang, Xiang; Li, Dong; Wang, Dapeng; Zhang, Renzhong; Song, Chengying; Che, Haozhao; Wang, Rui; Guo, Baoling; Chen, Guanghui
2015-10-01
In this paper, a practical single-frequency high-repetition linearly-polarized eye-safe all-fiber laser with constant peak power is demonstrated. It is based on master-oscillator power amplifier (MOPA) system. A distributed feedback laser diode simulating at 1550nm with narrow linewidth of 2.3 kHz is employed as the seed source. It is modulated to a pulse laser with high repetition of 20 kHz and peak power of 10mW by an acousto-optic modulator (AOM). The pulse width is tunable between 100ns to 400ns. Two-stage cascade amplifier is established, which consists of a pre-amplifier and a power-amplifier. Amplified spontaneous emission (ASE) and stimulated billion scattering are well suppressed by special management. The output peak power of 30W is obtained, which has nearly diffraction-limited beam quality. It operates in linewidth of 1.2MHz, polarization-extinction ratio (PER) of 25dB and signal-to-noise ratio (SNR) of more than 40dB. Gain of the whole amplifier achieves nearly 35dB. Furthermore, an embedded control system (ECS) based on the WinCE operating system (OS) and the chip of S3C2440 is proposed. This control system based on closed-loop feedback technology makes the peak power keeping constant even the pulse width tunable, which is convenient for the end user of the radar. This robust portable laser is remarkable and fulfills the desire of coherent detection excellently.
Microresonator Frequency Comb Optical Clock
2014-07-22
lithic construction with small size and power consumption. Microcomb development has included frequency control of their spectra [8–11...frequency f eo and amplified to a maximum of 140 mW. The first-order sideband powers are approximately 3 dB lower than the pump, and the piece of highly...resonator offers sufficient peak power for our experiments and is stable and repeatable even for different settings of pump frequency and power
NASA Technical Reports Server (NTRS)
Patterson, Richard L.; Elbuluk, Malik; Hammoud, Ahmad; VanKeuls, Frederick W.
2009-01-01
This report discusses the performance of silicon germanium, wideband gain amplifiers under extreme temperatures. The investigated devices include Texas Instruments THS4304-SP and THS4302 amplifiers. Both chips are manufactured using the BiCom3 process based on silicon germanium technology along with silicon-on-insulator (SOI) buried oxide layers. The THS4304-SP device was chosen because it is a Class V radiation-tolerant (150 kRad, TID silicon), voltage-feedback operational amplifier designed for use in high-speed analog signal applications and is very desirable for NASA missions. It operates with a single 5 V power supply [1]. It comes in a 10-pin ceramic flatpack package, and it provides balanced inputs, low offset voltage and offset current, and high common mode rejection ratio. The fixed-gain THS4302 chip, which comes in a 16-pin leadless package, offers high bandwidth, high slew rate, low noise, and low distortion [2]. Such features have made the amplifier useful in a number of applications such as wideband signal processing, wireless transceivers, intermediate frequency (IF) amplifier, analog-to-digital converter (ADC) preamplifier, digital-to-analog converter (DAC) output buffer, measurement instrumentation, and medical and industrial imaging.
47 CFR 2.815 - External radio frequency power amplifiers.
Code of Federal Regulations, 2014 CFR
2014-10-01
... amplifier is any device which, (1) when used in conjunction with a radio transmitter as a signal source is capable of amplification of that signal, and (2) is not an integral part of a radio transmitter as... following: (1) The external radio frequency power amplifier shall not be capable of amplification in the...
47 CFR 2.815 - External radio frequency power amplifiers.
Code of Federal Regulations, 2013 CFR
2013-10-01
... amplifier is any device which, (1) when used in conjunction with a radio transmitter as a signal source is capable of amplification of that signal, and (2) is not an integral part of a radio transmitter as... following: (1) The external radio frequency power amplifier shall not be capable of amplification in the...
47 CFR 2.815 - External radio frequency power amplifiers.
Code of Federal Regulations, 2012 CFR
2012-10-01
... amplifier is any device which, (1) when used in conjunction with a radio transmitter as a signal source is capable of amplification of that signal, and (2) is not an integral part of a radio transmitter as... following: (1) The external radio frequency power amplifier shall not be capable of amplification in the...
Direct current ballast circuit for metal halide lamp
NASA Technical Reports Server (NTRS)
Lutus, P. (Inventor)
1981-01-01
A direct current ballast circuit for a two electrode metal halide lamp is described. Said direct current ballast circuit includes a low voltage DC input and a high frequency power amplifier and power transformer for developing a high voltage output. The output voltage is rectified by diodes and filtered by inductor and capacitor to provide a regulated DC output through commutating diodes to one terminal of the lamp at the output terminal. A feedback path from the output of the filter capacitor through the bias resistor to power the high frequency circuit which includes the power amplifier and the power transformer for sustaining circuit operations during low voltage transients on the input DC supply is described. A current sensor connected to the output of the lamp through terminal for stabilizing lamp current following breakdown of the lamp is described.
Radio Frequency Power Load and Associated Method
NASA Technical Reports Server (NTRS)
Srinivasan, V. Karthik (Inventor); Freestone, Todd M. (Inventor); Sims, William Herbert, III (Inventor)
2014-01-01
A radio frequency power load and associated method. A radio frequency power load apparatus may include a container with an ionized fluid therein. The apparatus may include one conductor immersed in a fluid and another conductor electrically connected to the container. A radio frequency transmission system may include a radio frequency transmitter, a radio frequency amplifier connected to the transmitter and a radio frequency power load apparatus connected to the amplifier. The apparatus may include a fluid having an ion source therein, one conductor immersed in a fluid, and another conductor electrically connected to the container. A method of dissipating power generated by a radio frequency transmission system may include constructing a waveguide with ionized fluid in a container and connecting the waveguide to an amplifier of the transmission system.
A Digital Lock-In Amplifier for Use at Temperatures of up to 200 °C
Cheng, Jingjing; Xu, Yingjun; Wu, Lei; Wang, Guangwei
2016-01-01
Weak voltage signals cannot be reliably measured using currently available logging tools when these tools are subject to high-temperature (up to 200 °C) environments for prolonged periods. In this paper, we present a digital lock-in amplifier (DLIA) capable of operating at temperatures of up to 200 °C. The DLIA contains a low-noise instrument amplifier and signal acquisition and the corresponding signal processing electronics. The high-temperature stability of the DLIA is achieved by designing system-in-package (SiP) and multi-chip module (MCM) components with low thermal resistances. An effective look-up-table (LUT) method was developed for the lock-in amplifier algorithm, to decrease the complexity of the calculations and generate less heat than the traditional way. The performance of the design was tested by determining the linearity, gain, Q value, and frequency characteristic of the DLIA between 25 and 200 °C. The maximal nonlinear error in the linearity of the DLIA working at 200 °C was about 1.736% when the equivalent input was a sine wave signal with an amplitude of between 94.8 and 1896.0 nV and a frequency of 800 kHz. The tests showed that the DLIA proposed could work effectively in high-temperature environments up to 200 °C. PMID:27845710
Petlevich, Walter J.; Sverdrup, Edward F.
1978-01-01
A Doppler radar flowmeter comprises a transceiver which produces an audio frequency output related to the Doppler shift in frequency between radio waves backscattered from particulate matter carried in a fluid and the radiated radio waves. A variable gain amplifier and low pass filter are provided for amplifying and filtering the transceiver output. A frequency counter having a variable triggering level is also provided to determine the magnitude of the Doppler shift. A calibration method is disclosed wherein the amplifier gain and frequency counter trigger level are adjusted to achieve plateaus in the output of the frequency counter and thereby allow calibration without the necessity of being able to visually observe the flow.
Generation of chaotic radiation in a driven traveling wave tube amplifier with time-delayed feedback
NASA Astrophysics Data System (ADS)
Marchewka, Chad; Larsen, Paul; Bhattacharjee, Sudeep; Booske, John; Sengele, Sean; Ryskin, Nikita; Titov, Vladimir
2006-01-01
The application of chaos in communications and radar offers new and interesting possibilities. This article describes investigations on the generation of chaos in a traveling wave tube (TWT) amplifier and the experimental parameters responsible for sustaining stable chaos. Chaos is generated in a TWT amplifier when it is made to operate in a highly nonlinear regime by recirculating a fraction of the TWT output power back to the input in a delayed feedback configuration. A driver wave provides a constant external force to the system making it behave like a forced nonlinear oscillator. The effects of the feedback bandwidth, intensity, and phase are described. The study illuminates the different transitions to chaos and the effect of parameters such as the frequency and intensity of the driver wave. The detuning frequency, i.e., difference frequency between the driver wave and the natural oscillation of the system, has been identified as being an important physical parameter for controlling evolution to chaos. Among the observed routes to chaos, besides the more common period doubling, a new route called loss of frequency locking occurs when the driving frequency is adjacent to a natural oscillation mode. The feedback bandwidth controls the nonlinear dynamics of the system, particularly the number of natural oscillation modes. A computational model has been developed to simulate the experiments and reasonably good agreement is obtained between them. Experiments are described that demonstrate the feasibility of chaotic communications using two TWTs, where one is operated as a driven chaotic oscillator and the other as a time-delayed, open-loop amplifier.
Design, construction and test of RF solid state power amplifier for IRANCYC-10
NASA Astrophysics Data System (ADS)
Azizi, H.; Dehghan, M.; Abbasi Davani, F.; Ghasemi, F.
2018-03-01
In this paper, design, simulation and construction of a high power amplifier to provide the required power of a cyclotron accelerator (IRANCYC-10) is presented step-by-step. The Push-Pull designed amplifier can generate 750 W at the operating frequency of 71 MHz continous wave (CW). In this study, achieving the best efficiency of the amplifier, as well as reducing overall volume using baluns, were two important goals. The new offered water-cooled heat sink was used for cooling the amplifier which increases the operating life of the transistor. The gain and PAE of the SSPA were obtained 20 dB and 77.7%, respectively. The simulated and measured RF results are in good agreement with each other. The results show that, using an RF transformer in matching impedance of matching networks, it causes a smaller size and also a better amplifier performance.
Development of a 150-GHz MMIC Module Prototype for Large-Scale CMB Radiation
NASA Technical Reports Server (NTRS)
Kangaslahti, Pekka P.; Samoska, Lorene A.; Gaier, Todd C.; Soria, Mary M.; Lau, Judy M.; Sieth, Matthew M.; VanWinkle, Daniel; Tantawi, Sami
2011-01-01
HEMT-based receiver arrays with excellent noise and scalability are already starting to be manufactured at 100 GHz, but the advances in technology should make it possible to develop receiver modules with even greater operation frequency up to 200 GHz. A prototype heterodyne amplifier module has been developed for operation from 140 to 170 GHz using monolithic millimeter-wave integrated circuit (MMIC) low-noise InP high electron mobility transistor (HEMT) amplifiers. The compact, scalable module is centered on the 150-GHz atmospheric window using components known to operate well at these frequencies. Arrays equipped with hundreds of these modules can be optimized for many different astrophysical measurement techniques, including spectroscopy and interferometry. This module is a heterodyne receiver module that is extremely compact, and makes use of 35-nm InP HEMT technology, and which has been shown to have excellent noise temperatures when cooled cryogenically to 30 K. This reduction in system noise over prior art has been demonstrated in commercial mixers (uncooled) at frequencies of 160-180 GHz. The module is expected to achieve a system noise temperature of 60 K when cooled. An MMIC amplifier module has been designed to demonstrate the feasibility of expanding heterodyne amplifier technology to the 140 to 170-GHz frequency range for astronomical observations. The miniaturization of many standard components and the refinement of RF interconnect technology have cleared the way to mass-production of heterodyne amplifier receivers, making it a feasible technology for many large-population arrays. This work furthers the recent research efforts in compact coherent receiver modules, including the development of the Q/U Imaging ExperimenT (QUIET) modules centered at 40 and 90 GHz, and the production of heterodyne module prototypes at 90 GHz.
NASA Astrophysics Data System (ADS)
Jagodzinski, Jeremy James
2007-12-01
The development to date of a diode-laser based velocimeter providing point-velocity-measurements in unseeded flows using molecular Rayleigh scattering is discussed. The velocimeter is based on modulated filtered Rayleigh scattering (MFRS), a novel variation of filtered Rayleigh scattering (FRS), utilizing modulated absorption spectroscopy techniques to detect a strong absorption of a relatively weak Rayleigh scattered signal. A rubidium (Rb) vapor filter is used to provide the relatively strong absorption; alkali metal vapors have a high optical depth at modest vapor pressures, and their narrow linewidth is ideally suited for high-resolution velocimetry. Semiconductor diode lasers are used to generate the relatively weak Rayleigh scattered signal; due to their compact, rugged construction diode lasers are ideally suited for the environmental extremes encountered in many experiments. The MFRS technique utilizes the frequency-tuning capability of diode lasers to implement a homodyne detection scheme using lock-in amplifiers. The optical frequency of the diode-based laser system used to interrogate the flow is rapidly modulated about a reference frequency in the D2-line of Rb. The frequency modulation is imposed on the Rayleigh scattered light that is collected from the probe volume in the flow under investigation. The collected frequency modulating Rayleigh scattered light is transmitted through a Rb vapor filter before being detected. The detected modulated absorption signal is fed to two lock-in amplifers synchronized with the modulation frequency of the source laser. High levels of background rejection are attained since the lock-ins are both frequency and phase selective. The two lock-in amplifiers extract different Fourier components of the detected modulated absorption signal, which are ratioed to provide an intensity normalized frequency dependent signal from a single detector. A Doppler frequency shift in the collected Rayleigh scattered light due to a change in the velocity of the flow under investigation results in a change in the detected modulated absorption signal. This change in the detected signal provides a quantifiable measure of the Doppler frequency shift, and hence the velocity in the probe volume, provided that the laser source exhibits acceptable levels of frequency stability (determined by the magnitude of the velocities being measured). An extended cavity diode laser (ECDL) in the Littrow configuration provides frequency tunable, relatively narrow-linewidth lasing for the MFRS velocimeter. Frequency stabilization of the ECDL is provided by a proportional-integral-differential (PID) controller based on an error signal in the reference arm of the experiment. The optical power of the Littrow laser source is amplified by an antireflection coated (AR coated) broad stripe diode laser. The single-mode, frequency-modulatable, frequency-stable O(50 mW) of optical power provided by this extended cavity diode laser master oscillator power amplifier (ECDL-MOPA) system provided sufficient scattering signal from a condensing jet of CO2 to implement the MFRS technique in the frequency-locked mode of operation.
NASA Astrophysics Data System (ADS)
Ko, Kwang-Hoon; Kim, Yonghee; Park, Hyunmin; Cha, Yong-Ho; Kim, Taek-Soo; Lee, Lim; Lim, Gwon; Han, Jaemin; Ko, Kwang-Hee; Jeong, Do-Young
2015-08-01
Continuous-wave single-frequency tunable 544- and 272-nm beams have been demonstrated by the second- and fourth-harmonic conversions of a 1088-nm fundamental beam from a diode-oscillator fiber-amplifier. The single-pass second-harmonic generation with a MgO-doped periodically poled stoichiometric LiTaO3 crystal and the external-cavity frequency-doubling technique with a bulk BBO crystal were employed to achieve an approximately 6-W 544-nm beam and a 1.5-W 272-nm beam, respectively. We characterized the second- and fourth-harmonic generations and discussed their applications to calcium spectroscopy.
An acoustic filter based on layered structure
Steer, Michael B.
2015-01-01
Acoustic filters (AFs) are key components to control wave propagation in multi-frequency systems. We present a design which selectively achieves acoustic filtering with a stop band and passive amplification at the high- and low-frequencies, respectively. Measurement results from the prototypes closely match the design predictions. The AF suppresses the high frequency aliasing echo by 14.5 dB and amplifies the low frequency transmission by 8.0 dB, increasing an axial resolution from 416 to 86 μm in imaging. The AF design approach is proved to be effective in multi-frequency systems. PMID:25829548
Novel matched amplifiers with low noise positive feedback. Part II: Resistive-capacitive feedback
NASA Astrophysics Data System (ADS)
Bruck, Y.; Zakharenko, V.
2010-02-01
This article is a continuation of consideration for an amplifier with resistive positive feedback (RPF) (Bruck (2008), 'Novel Matched LNA with Low Noise Positive Feedback. Part 1: General Features and Resistive Feedback', International Journal of Electronics, 95, 441-456). We propose here new configuration schematics of a transformer-less selective LNA with resistive-capacitive positive feedback (RCPF). A circuit of an amplifier with a transistor connected into a circuit with a common base (CB) configuration is analysed in detail. RCPF and RPF circuits are compared. It is shown that the LNA RCPF provides any pass-band, a good level of input and output matching, a minimum noise temperature which is significantly lower than that of the LNA RPF, a rather high linearity, and stability of amplification. The simulation results and some experimental data for the amplifiers intended for use in the LOFAR radiotelescope (Konovalenko et al. (2003), 'Thirty Element Array Antenna as a Prototype of a Huge Low-Frequency Radio Telescope,' Experimental Astronomy, 16, 149-164; Konovalenko (2007), 'Ukrainian Contribution to LOFAR', A scientific workshop, organised by LOFAR/ASTRON' Emmen, Netherlands, 23-27. http://www.lofar.org/workshop) are given. It is assumed that such devices are of a special interest for high-frequency integral circuits (IC).
NASA Astrophysics Data System (ADS)
Lohmeyer, Whitney; Carlton, Ashley; Wong, Frankie; Bodeau, Michael; Kennedy, Andrew; Cahoy, Kerri
2015-05-01
The key components in communications satellite payloads are the high-power amplifiers that amplify the received signal so that it can be accurately transmitted to the intended end user. In this study, we examine 26 amplifier anomalies and quantify the high-energy electron environment for periods of time prior to the anomalies. Building on the work of Lohmeyer and Cahoy (2013), we find that anomalies occur at a rate higher than just by chance when the >2 MeV electron fluence accumulated over 14 and 21 days is elevated. To try to understand "why," we model the amplifier subsystem to assess whether the dielectric material in the radio frequency (RF) coaxial cables, which are the most exposed part of the system, is liable to experience electrical breakdown due to internal charging. We find that the accumulated electric field over the 14 and 21 days leading up to the anomalies is high enough to cause the dielectric material in the coax to breakdown. We also find that the accumulated voltages reached are high enough to compromise components in the amplifier system, for example, the direct current (DC) blocking capacitor. An electron beam test using a representative coaxial cable terminated in a blocking capacitor showed that discharges could occur with peak voltages and energies sufficient to damage active RF semiconductor devices.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Bai Xianchen; Zhang Jiande; Yang Jianhua
2012-12-15
Theoretical analyses and preliminary experiments on the phase-locking characteristics of an inductively loaded 2-cavity wide-gap klystron amplifier (WKA) with high power injection driven by a GW-class relativistic backward wave oscillator (RBWO) are presented. Electric power of the amplifier and oscillator is supplied by a single accelerator being capable of producing dual electron beams. The well phase-locking effect of the RBWO-WKA system requires the oscillator have good frequency reproducibility and stability from pulse to pulse. Thus, the main switch of the accelerator is externally triggered to stabilize the diode voltage and then the working frequency. In the experiment, frequency of themore » WKA is linearly locked by the RBWO. With a diode voltage of 530 kV and an input power of {approx}22 MW, an output power of {approx}230 MW with the power gain of {approx}10.2 dB is obtained from the WKA. As the main switch is triggered, the relative phase difference between the RBWO and the WKA is less than {+-}15 Degree-Sign in a single shot, and phase jitter of {+-}11 Degree-Sign is obtained within a series of shots with duration of about 40 ns.« less
NASA Astrophysics Data System (ADS)
Bai, Xianchen; Zhang, Jiande; Yang, Jianhua; Jin, Zhenxing
2012-12-01
Theoretical analyses and preliminary experiments on the phase-locking characteristics of an inductively loaded 2-cavity wide-gap klystron amplifier (WKA) with high power injection driven by a GW-class relativistic backward wave oscillator (RBWO) are presented. Electric power of the amplifier and oscillator is supplied by a single accelerator being capable of producing dual electron beams. The well phase-locking effect of the RBWO-WKA system requires the oscillator have good frequency reproducibility and stability from pulse to pulse. Thus, the main switch of the accelerator is externally triggered to stabilize the diode voltage and then the working frequency. In the experiment, frequency of the WKA is linearly locked by the RBWO. With a diode voltage of 530 kV and an input power of ˜22 MW, an output power of ˜230 MW with the power gain of ˜10.2 dB is obtained from the WKA. As the main switch is triggered, the relative phase difference between the RBWO and the WKA is less than ±15° in a single shot, and phase jitter of ±11° is obtained within a series of shots with duration of about 40 ns.
Frequency dependence of coherently amplified two-photon emission from hydrogen molecules
NASA Astrophysics Data System (ADS)
Hara, Hideaki; Miyamoto, Yuki; Hiraki, Takahiro; Masuda, Takahiko; Sasao, Noboru; Uetake, Satoshi; Yoshimi, Akihiro; Yoshimura, Koji; Yoshimura, Motohiko
2017-12-01
We investigate how the efficiency of coherently amplified two-photon emission depends on the frequency of one of the two emitted photons, namely the signal photon. This is done over the wavelength range of 5.048-10.21 μ m by using the vibrational transition of parahydrogen. The efficiency increases with the frequency of the signal photon. Considering experimental errors, our results are consistent with the theoretical prediction for the present experimental conditions. This study is an experimental demonstration of the frequency dependence of coherently amplified two-photon emission, and also presents its potential as a light source.
Low speed phaselock speed control system. [for brushless dc motor
NASA Technical Reports Server (NTRS)
Fulcher, R. W.; Sudey, J. (Inventor)
1975-01-01
A motor speed control system for an electronically commutated brushless dc motor is provided which includes a phaselock loop with bidirectional torque control for locking the frequency output of a high density encoder, responsive to actual speed conditions, to a reference frequency signal, corresponding to the desired speed. The system includes a phase comparator, which produces an output in accordance with the difference in phase between the reference and encoder frequency signals, and an integrator-digital-to-analog converter unit, which converts the comparator output into an analog error signal voltage. Compensation circuitry, including a biasing means, is provided to convert the analog error signal voltage to a bidirectional error signal voltage which is utilized by an absolute value amplifier, rotational decoder, power amplifier-commutators, and an arrangement of commutation circuitry.
High-energy, high-repetition-rate picosecond pulses from a quasi-CW diode-pumped Nd:YAG system.
Noom, Daniel W E; Witte, Stefan; Morgenweg, Jonas; Altmann, Robert K; Eikema, Kjeld S E
2013-08-15
We report on a high-power quasi-CW pumped Nd:YAG laser system, producing 130 mJ, 64 ps pulses at 1064 nm wavelength with a repetition rate of 300 Hz. Pulses from a Nd:YVO(4) oscillator are first amplified by a regenerative amplifier to the millijoule level and then further amplified in quasi-CW diode-pumped Nd:YAG modules. Pulsed diode pumping enables a high gain at repetition rates of several hundred hertz, while keeping thermal effects manageable. Birefringence compensation and multiple thermal-lensing-compensated relay-imaging stages are used to maintain a top-hat beam profile. After frequency doubling, 75 mJ pulses are obtained at 532 nm. The intensity stability is better than 1.1%, which makes this laser an attractive pump source for a high-repetition-rate optical parametric amplification system.
Radiation Performance of Commercial SiGe HBT BiCMOS-High Speed Operational Amplifiers
NASA Technical Reports Server (NTRS)
Chen, Dakai; Pellish, Jonathan; Phan, Anthony; Kim, Hak; Burns, Sam; Albarian, Rafi; Holcombe, Bruce; Little, Bradley; Salzman, James; LaBel, Kenneth
2010-01-01
We present results on heavy-ion and proton irradiations for commercial SiGe BiCMOS operational amplifiers: LTC6400-20 from Linear Technology and THS4304 from Texas Instruments. We found that the devices are susceptible to heavy-ion-induced SETs. The SET cross-sections increase with increasing operating frequency. The LTC6400 exhibits a LET(sub th) < 7.4 MeV·sq cm/mg for frequencies ranging from 10 to 1000 MHz. The THS4304 exhibits a LET(sub th) < 4.4 MeV·sq cm/mg at 200 MHz; the LET(sub th) decreases with increasing frequency. The significance of the SETs also increases with frequency. The SETs at 1000 MHz can erase several signal cycles. We al.so found that the LTC6400 is relatively robust against 198 and 54 MeV protons. We did not observe angular sensitivity from the proton irradiations.
Power-Combined GaN Amplifier with 2.28-W Output Power at 87 GHz
NASA Technical Reports Server (NTRS)
Fung, King Man; Ward, John; Chattopadhyay, Goutam; Lin, Robert H.; Samoska, Lorene A.; Kangaslahti, Pekka P.; Mehdi, Imran; Lambrigtsen, Bjorn H.; Goldsmith, Paul F.; Soria, Mary M.;
2011-01-01
Future remote sensing instruments will require focal plane spectrometer arrays with higher resolution at high frequencies. One of the major components of spectrometers are the local oscillator (LO) signal sources that are used to drive mixers to down-convert received radio-frequency (RF) signals to intermediate frequencies (IFs) for analysis. By advancing LO technology through increasing output power and efficiency, and reducing component size, these advances will improve performance and simplify architecture of spectrometer array systems. W-band power amplifiers (PAs) are an essential element of current frequency-multiplied submillimeter-wave LO signal sources. This work utilizes GaN monolithic millimeter-wave integrated circuit (MMIC) PAs developed from a new HRL Laboratories LLC 0.15- m gate length GaN semiconductor transistor. By additionally waveguide power combining PA MMIC modules, the researchers here target the highest output power performance and efficiency in the smallest volume achievable for W-band.
1.8 mJ, 3.5 kW single-frequency optical pulses at 1572 nm generated from an all-fiber MOPA system.
Lee, Wangkuen; Geng, Jihong; Jiang, Shibin; Yu, Anthony W
2018-05-15
High-energy single-frequency optical pulses at 1572 nm were generated from an all-fiber MOPA system for atmospheric CO 2 LIDAR system application. We report the experimental demonstration of 1.8 mJ, a peak power of 3.5 kW at the pulse repetition of 2.5 kHz, as well as 1.3 mJ, a peak power of 2.5 kW at the pulse repetition of 7.5 kHz single-frequency optical pulses at 1572 nm using single-mode large-core polarization-maintaining Er-Yb co-doped silicate glass fiber amplifiers pumped at 976 nm. To the best of our knowledge, this is the highest pulse energy of single frequency at 1572 nm from an all-fiber amplifier system.
NASA Astrophysics Data System (ADS)
Thakur, S. K.; Kumar, Y.
2018-05-01
This paper described the detailed design, development and testing of high voltage power supply (‑30 kV, 3.2 A) and different power supplies for biasing electrodes of Inductive Output Tube (IOT) based high power Radio Frequency (RF) amplifier. This IOT based RF amplifier is further used for pursuing research and development activity in superconducting RF cavity project at Variable Energy Cyclotron Centre (VECC) Kolkata. The state-of-the-art technology of IOT-based high power RF amplifier is designed, developed, and tested at VECC which is the first of its kind in India. A high voltage power supply rated at negative polarity of 30 kV dc/3.2 A is required for biasing cathode of IOT with crowbar protection circuit. This power supply along with crowbar protection system is designed, developed and tested at VECC for testing the complete setup. The technical difficulties and challenges occured during the design of cathode power supply, its crowbar protection techniques along with other supported power supplies i.e. grid and ion pump power supplies are discussed in this paper.
NASA Astrophysics Data System (ADS)
Tracy, L. A.; Luhman, D. R.; Carr, S. M.; Bishop, N. C.; Ten Eyck, G. A.; Pluym, T.; Wendt, J. R.; Lilly, M. P.; Carroll, M. S.
2016-02-01
We use a cryogenic high-electron-mobility transistor circuit to amplify the current from a single electron transistor, allowing for demonstration of single shot readout of an electron spin on a single P donor in Si with 100 kHz bandwidth and a signal to noise ratio of ˜9. In order to reduce the impact of cable capacitance, the amplifier is located adjacent to the Si sample, at the mixing chamber stage of a dilution refrigerator. For a current gain of ˜ 2.7 × 10 3 , the power dissipation of the amplifier is 13 μW, the bandwidth is ˜ 1.3 MHz, and for frequencies above 300 kHz the current noise referred to input is ≤ 70 fA/ √{ Hz } . With this amplification scheme, we are able to observe coherent oscillations of a P donor electron spin in isotopically enriched 28Si with 96% visibility.
Cryogenic ultra-low-noise SiGe transistor amplifier.
Ivanov, B I; Trgala, M; Grajcar, M; Il'ichev, E; Meyer, H-G
2011-10-01
An ultra-low-noise one-stage SiGe heterojunction bipolar transistor amplifier was designed for cryogenic temperatures and a frequency range of 10 kHz-100 MHz. A noise temperature T(N) ≈ 1.4 K was measured at an ambient temperature of 4.2 K at frequencies between 100 kHz and 100 MHz for a source resistance of ~50 Ω. The voltage gain of the amplifier was 25 dB at a power consumption of 720 μW. The input voltage noise spectral density of the amplifier is about 35 pV/√Hz. The low noise resistance and power consumption makes the amplifier suitable for readout of resistively shunted DC SQUID magnetometers and amplifiers.
Digital pressure transducer for use at high temperatures
Karplus, Henry H. B.
1981-01-01
A digital pressure sensor for measuring fluid pressures at relatively high temperatures includes an electrically conducting fiber coupled to the fluid by a force disc that causes tension in the fiber to be a function of fluid pressure. The tension causes changes in the mechanical resonant frequency of the fiber, which is caused to vibrate in a magnetic field to produce an electrical signal from a positive-feedback amplifier at the resonant frequency. A count of this frequency provides a measure of the fluid pressure.
Digital pressure transducer for use at high temperatures
Karplus, H.H.B.
A digital pressure sensor for measuring fluid pressures at relatively high temperatures includes an electrically conducting fiber coupled to the fluid by a force disc that causes tension in the fiber to be a function of fluid pressure. The tension causes changes in the mechanical resonant frequency of the fiber, which is caused to vibrate in a magnetic field to produce an electrical signal from a positive-feedback amplifier at the resonant frequency. A count of this frequency provides a measure of the fluid pressure.
Noise temperature and noise figure concepts: DC to light
NASA Technical Reports Server (NTRS)
Stelzried, C. T.
1982-01-01
The Deep Space Network is investigating the use of higher operational frequencies for improved performance. Noise temperature and noise figure concepts are used to describe the noise performance of these receiving systems. It is proposed to modify present noise temperature definitions for linear amplifiers so they will be valid over the range (hf/kT) 1 (hf/kT). This is important for systems operating at high frequencies and low noise temperatures, or systems requiring very accurate calibrations. The suggested definitions are such that for an ideal amplifier, T sub e = (hg/k) = T sub q and F = 1. These definitions revert to the present definition for (hf/kT) 1. Noise temperature calibrations are illustrated with a detailed example. These concepts are applied to system signal-to-noise analysis. The fundamental limit to a receiving system sensitivity is determined by the thermal noise of the source and the quantum noise limit of the receiver. The sensitivity of a receiving system consisting of an ideal linear amplifier with a 2.7 K source, degrades significantly at higher frequencies.
Chen, Wei-Ming; Yang, Wen-Chia; Tsai, Tzung-Yun; Chiueh, Herming; Wu, Chung-Yu
2011-01-01
In this paper an 8-channel CMOS general-purpose analog front-end (AFE) circuit with tunable gain and bandwidth for biopotential signal recording systems is presented. The proposed AFE consists of eight chopper stabilized pre-amplifiers, an 8-to-1 analog multiplexer, and a programmable gain amplifier. It can be used to sense and amplify different kinds of biopotential signals, such as electrocorticogram (ECoG), electrocardiogram (ECG) and electromyogram (EMG). The AFE chip is designed and fabricated in 0.18-μm CMOS technology. The measured maximum gain of AFE is 60.8 dB. The low cutoff frequency can achieve as low as 0.8 Hz and high cutoff frequency can be adjusted from 200 Hz to 10 kHz to suit for different kinds of biopotential signals. The measured input-referred noise is 0.9 μV(rms), with the power consumption of 18μW per channel at 1.8-V power supply. And the noise efficiency factor (NEF) is only 1.3 for pre-amplifier.
Noise effect on performance of IR PVDF pyroelectric detector
NASA Astrophysics Data System (ADS)
Abdullah, K. Al; Batal, M. Anwar; Hamdan, Rawad; Khalil, Toni; Salame, Chafic
2018-05-01
The spin-casting and casting technology were used to make IR pyroelectric PVDF detectors, where the operational amplifier, TC75S63TU, is used to amplify pyroelectrical signal. The pyroelectric coefficient is measured by charge integration method, which is 23 µC/m2K. The voltage responsivity and noise equivalent power depending on the dielectric constant, specific conductivity and loss tangent, which are measured at various frequencies, is estimated where changing of detector capacitance and resistor with frequency is taken into account. Maximum voltage responsivity was for detector thickness d=116.05 µm at chopping frequency (f=0.8Hz). Influence of thermal, Johnson and amplifier noises on output voltage are studied. At frequencies (<1kHz), Johnson noise dominates whereas at frequencies (>1kHz), amplifier voltage noise dominates. The thinner detector, the lower noise affects on output voltage. The optimal signal to noise ratio (SNR) of pyroelectrical detector is for thickness d=30.1 µm at frequency f=20Hz. The reducing electrode area decreases slightly total noise at low frequency and enhances slightly SNR of pyroelectrical detector.
Preamplifiers for non-contact capacitive biopotential measurements*
Peng, GuoChen; Ignjatovic, Zeljko; Bocko, Mark F.
2014-01-01
Non-contact biopotential sensing is an attractive measurement strategy for a number of health monitoring applications, primarily the ECG and the EEG. In all such applications a key technical challenge is the design of a low-noise trans-impedance preamplifier for the typically low-capacitance, high source impedance sensing electrodes. In this paper, we compare voltage and charge amplifier designs in terms of their common mode rejection ratio, noise performance, and frequency response. Both amplifier types employ the same operational-transconductance amplifier (OTA), which was fabricated in a 0.35um CMOS process. The results show that a charge amplifier configuration has advantages for small electrode-to-subject coupling capacitance values (less than 10 pF - typical of noncontact electrodes) and that the voltage amplifier configuration has advantages for electrode capacitances above 10 pF. PMID:24109979
Highly Sensitive Electro-Optic Modulators
DOE Office of Scientific and Technical Information (OSTI.GOV)
DeVore, Peter S
2015-10-26
There are very important diagnostic and communication applications that receive faint electrical signals to be transmitted over long distances for capture. Optical links reduce bandwidth and distance restrictions of metal transmission lines; however, such signals are only weakly imprinted onto the optical carrier, resulting in low fidelity transmission. Increasing signal fidelity often necessitates insertion of radio-frequency (RF) amplifiers before the electro-optic modulator, but (especially at high frequencies) RF amplification results in large irreversible distortions. We have investigated the feasibility of a Sensitive and Linear Modulation by Optical Nonlinearity (SALMON) modulator to supersede RF-amplified modulators. SALMON uses cross-phase modulation, a manifestationmore » of the Kerr effect, to enhance the modulation depth of an RF-modulated optical wave. This ultrafast process has the potential to result in less irreversible distortions as compared to a RF-amplified modulator due to the broadband nature of the Kerr effect. Here, we prove that a SALMON modulator is a feasible alternative to an RFamplified modulator, by demonstrating a sensitivity enhancement factor greater than 20 and significantly reduced distortion.« less
Cross-correlation measurement of quantum shot noise using homemade transimpedance amplifiers
DOE Office of Scientific and Technical Information (OSTI.GOV)
Hashisaka, Masayuki, E-mail: hashisaka@phys.titech.ac.jp; Ota, Tomoaki; Yamagishi, Masakazu
We report a cross-correlation measurement system, based on a new approach, which can be used to measure shot noise in a mesoscopic conductor at milliKelvin temperatures. In contrast to other measurement systems in which high-speed low-noise voltage amplifiers are commonly used, our system employs homemade transimpedance amplifiers (TAs). The low input impedance of the TAs significantly reduces the crosstalk caused by unavoidable parasitic capacitance between wires. The TAs are designed to have a flat gain over a frequency band from 2 kHz to 1 MHz. Low-noise performance is attained by installing the TAs at a 4 K stage of amore » dilution refrigerator. Our system thus fulfills the technical requirements for cross-correlation measurements: low noise floor, high frequency band, and negligible crosstalk between two signal lines. Using our system, shot noise generated at a quantum point contact embedded in a quantum Hall system is measured. The good agreement between the obtained shot-noise data and theoretical predictions demonstrates the accuracy of the measurements.« less
A small signal amplifier based on ionic liquid gated black phosphorous field effect transistor
DOE Office of Scientific and Technical Information (OSTI.GOV)
Das, Saptarshi; Zhang, Wei; Thoutam, Laxman Raju
2015-04-10
In this article we report an analog small signal amplifier based on semiconducting black phosphorus (BP), the most recent addition to the family of two dimensional crystals. The amplifier, consisting of a BP load resistor and a BP field effect transistor (FET) was integrated on a single flake. The gain of the amplifier was found to be ~9 and it remained undistorted for input signal frequencies up to 15 kHz. In addition, we also report record high ON current of 200 µA/µm at V DD = -0.5V in BP FETs. Our results demonstrates the possibility for the implementation of BPmore » in the future generations of analog devices.« less
NASA Astrophysics Data System (ADS)
Carlowitz, Christian; Girg, Thomas; Ghaleb, Hatem; Du, Xuan-Quang
2017-09-01
For ultra-high speed communication systems at high center frequencies above 100 GHz, we propose a disruptive change in system architecture to address major issues regarding amplifier chains with a large number of amplifier stages. They cause a high noise figure and high power consumption when operating close to the frequency limits of the underlying semiconductor technologies. Instead of scaling a classic homodyne transceiver system, we employ repeated amplification in single-stage amplifiers through positive feedback as well as synthesizer-free self-mixing demodulation at the receiver to simplify the system architecture notably. Since the amplitude and phase information for the emerging oscillation is defined by the input signal and the oscillator is only turned on for a very short time, it can be left unstabilized and thus come without a PLL. As soon as gain is no longer the most prominent issue, relaxed requirements for all the other major components allow reconsidering their implementation concepts to achieve further improvements compared to classic systems. This paper provides the first comprehensive overview of all major design aspects that need to be addressed upon realizing a SPARS-based transceiver. At system level, we show how to achieve high data rates and a noise performance comparable to classic systems, backed by scaled demonstrator experiments. Regarding the transmitter, design considerations for efficient quadrature modulation are discussed. For the frontend components that replace PA and LNA amplifier chains, implementation techniques for regenerative sampling circuits based on super-regenerative oscillators are presented. Finally, an analog-to-digital converter with outstanding performance and complete interfaces both to the analog baseband as well as to the digital side completes the set of building blocks for efficient ultra-high speed communication.
Parametric traveling wave amplifier with a low pump frequency
NASA Astrophysics Data System (ADS)
Marchenko, V. F.; Streltsov, A. M.; Zhmurov, S. E.
1983-01-01
Consideration is given to the model of a parametric traveling wave amplifier with a cubic nonlinearity in the form of an LF filter with MOS varactors. The operation of the amplifier is analyzed with allowance for wave damping and nonlinearity saturation, and the nonlinear mode of operation is examined. Experimental results are discussed, with emphasis on the amplitude-frequency response characteristics.
High frequency inductive lamp and power oscillator
Kirkpatrick, Douglas A.; Gitsevich, Aleksandr
2005-09-27
An oscillator includes an amplifier having an input and an output, a feedback network connected between the input of the amplifier and the output of the amplifier, the feedback network being configured to provide suitable positive feedback from the output of the amplifier to the input of the amplifier to initiate and sustain an oscillating condition, and a tuning circuit connected to the input of the amplifier, wherein the tuning circuit is continuously variable and consists of solid state electrical components with no mechanically adjustable devices including a pair of diodes connected to each other at their respective cathodes with a control voltage connected at the junction of the diodes. Another oscillator includes an amplifier having an input and an output, a feedback network connected between the input of the amplifier and the output of the amplifier, the feedback network being configured to provide suitable positive feedback from the output of the amplifier to the input of the amplifier to initiate and sustain an oscillating condition, and transmission lines connected to the input of the amplifier with an input pad and a perpendicular transmission line extending from the input pad and forming a leg of a resonant "T", and wherein the feedback network is coupled to the leg of the resonant "T".
Ka-Band Waveguide Three-Way Serial Combiner for MMIC Amplifiers
NASA Technical Reports Server (NTRS)
Wintucky, Edwin G.; Freeman, Jon C.; Chevalier, Christine T.
2012-01-01
In this innovation, the three-way combiner consists internally of two branch-line hybrids that are connected in series by a short length of waveguide. Each branch-line hybrid is designed to combine input signals that are in phase with an amplitude ratio of two. The combiner is constructed in an E-plane split-block arrangement and is precision machined from blocks of aluminum with standard WR-28 waveguide ports. The port impedances of the combiner are matched to that of a standard WR-28 waveguide. The component parts include the power combiner and the MMIC (monolithic microwave integrated circuit) power amplifiers (PAs). The three-way series power combiner is a six-port device. For basic operation, power that enters ports 3, 5, and 6 is combined in phase and appears at port 1. Ports 2 and 4 are isolated ports. The application of the three-way combiner for combining three PAs with unequal output powers was demonstrated. NASA requires narrow-band solid-state power amplifiers (SSPAs) at Ka-band frequencies with output power in the range of 3 to 5 W for radio or gravity science experiments. In addition, NASA also requires wideband, high-efficiency SSPAs at Ka-band frequencies with output power in the range of 5 to 15 W for high-data-rate communications from deep space to Earth. The three-way power combiner is designed to operate over the frequency band of 31.8 to 32.3 GHz, which is NASA s deep-space frequency band.
Low-cost FM oscillator for capacitance type of blade tip clearance measurement system
NASA Technical Reports Server (NTRS)
Barranger, John P.
1987-01-01
The frequency-modulated (FM) oscillator described is part of a blade tip clearance measurement system that meets the needs of a wide class of fans, compressors, and turbines. As a result of advancements in the technology of ultra-high-frequency operational amplifiers, the FM oscillator requires only a single low-cost integrated circuit. Its carrier frequency is 42.8 MHz when it is used with an integrated probe and connecting cable assembly consisting of a 0.81 cm diameter engine-mounted capacitance probe and a 61 cm long hermetically sealed coaxial cable. A complete circuit analysis is given, including amplifier negative resistance characteristics. An error analysis of environmentally induced effects is also derived, and an error-correcting technique is proposed. The oscillator can be calibrated in the static mode and has a negative peak frequency deviation of 400 kHz for a rotor blade thickness of 1.2 mm. High-temperature performance tests of the probe and 13 cm of the adjacent cable show good accuracy up to 600 C, the maximum permissible seal temperature. The major source of error is the residual FM oscillator noise, which produces a clearance error of + or - 10 microns at a clearance of 0.5 mm. The oscillator electronics accommodates the high rotor speeds associated with small engines, the signals from which may have frequency components as high as 1 MHz.
Frequency-Agile LIDAR Receiver for Chemical and Biological Agent Sensing
2010-06-01
transimpedance preamplifier architecture was optimized around the selected IR detector diode – Input-referenced noise density of 0.8 nV/ Hz0.5 A portion of...objectives: • Reduce baseline (background) photon flux on detector : Tunable Fabry-Perot etalon in optical train • Reduce input-referenced amplifier noise ...custom amplifier • Reduce detector dark current: High impedance detector Performance Metrics: – Noise equivalent power of receiver system (NEP
Power Amplifier Module with 734-mW Continuous Wave Output Power
NASA Technical Reports Server (NTRS)
Fung, King Man; Samoska, Lorene A.; Kangaslahti, Pekka P.; Lamgrigtsen, Bjorn H.; Goldsmith, Paul F.; Lin, Robert H.; Soria, Mary M.; Cooperrider, Joelle T.; Micovic, Moroslav; Kurdoghlian, Ara
2010-01-01
Research findings were reported from an investigation of new gallium nitride (GaN) monolithic millimeter-wave integrated circuit (MMIC) power amplifiers (PAs) targeting the highest output power and the highest efficiency for class-A operation in W-band (75-110 GHz). W-band PAs are a major component of many frequency multiplied submillimeter-wave LO signal sources. For spectrometer arrays, substantial W-band power is required due to the passive lossy frequency multipliers-to generate higher frequency signals in nonlinear Schottky diode-based LO sources. By advancing PA technology, the LO system performance can be increased with possible cost reductions compared to current GaAs PAs. High-power, high-efficiency GaN PAs are cross-cutting and can enable more efficient local oscillator distribution systems for new astrophysics and planetary receivers and heterodyne array instruments. It can also allow for a new, electronically scannable solid-state array technology for future Earth science radar instruments and communications platforms.
Discriminator Stabilized Superconductor/Ferroelectric Thin Film Local Oscillator
NASA Technical Reports Server (NTRS)
Romanofsky, Robert R. (Inventor); Miranda, Felix A. (Inventor)
2000-01-01
A tunable local oscillator with a tunable circuit that includes a resonator and a transistor as an active element for oscillation. Tuning of the circuit is achieved with an externally applied dc bias across coupled lines on the resonator. Preferably the resonator is a high temperature superconductor microstrip ring resonator with integral coupled lines formed over a thin film ferroelectric material. A directional coupler samples the output of the oscillator which is fed into a diplexer for determining whether the oscillator is performing at a desired frequency. The high-pass and lowpass outputs of the diplexer are connected to diodes respectively for inputting the sampled signals into a differential operational amplifier. The amplifier compares the sampled signals and emits an output signal if there is a difference between the resonant and crossover frequencies. Based on the sampled signal, a bias supplied to the ring resonator is either increased or decreased for raising or lowering the resonant frequency by decreasing or increasing, respectively, the dielectric constant of the ferroelectric.
NASA Astrophysics Data System (ADS)
Tao, R.; Ma, Y.; Si, L.; Dong, X.; Zhou, P.; Liu, Z.
2011-11-01
We present a theoretical and experimental study of a target-in-the-loop (TIL) high-power adaptive phase-locked fiber laser array. The system configuration of the TIL adaptive phase-locked fiber laser array is introduced, and the fundamental theory for TIL based on the single-dithering technique is deduced for the first time. Two 10-W-level high-power fiber amplifiers are set up and adaptive phase locking of the two fiber amplifiers is accomplished successfully by implementing a single-dithering algorithm on a signal processor. The experimental results demonstrate that the optical phase noise for each beam channel can be effectively compensated by the TIL adaptive optics system under high-power applications and the fringe contrast on a remotely located extended target is advanced from 12% to 74% for the two 10-W-level fiber amplifiers.
Barbaro, V; Bartolini, P; Calcagnini, G; Censi, F; Beard, B; Ruggera, P; Witters, D
2003-06-07
The aim of this study was to investigate the mechanisms by which the radiated radiofrequency (RF) GSM (global system for mobile communication) signal may affect pacemaker (PM) function. We measured the signal at the output of the sensing amplifier of PMs with various configurations of low-pass filters. We used three versions of the same PM model: one with a block capacitor which short circuits high-frequency signals; one with a ceramic feedthrough capacitor, a hermetically sealed mechanism connecting the internal electronics to the external connection block, and one with both. The PMs had been modified to have an electrical shielded connection to the output of the sensing amplifier. For each PM, the output of the sensing amplifier was monitored under exposure to modulated and non-modulated RF signals, and to GSM signals (900 and 1800 MHz). Non-modulated RF signals did not alter the response of the PM sensing amplifier. Modulated RF signals showed that the block capacitor did not succeed in short circuiting the RF signal, which is somehow demodulated by the PM internal non-linear circuit elements. Such a demodulation phenomenon poses a critical problem because digital cellular phones use extremely low-frequency modulation (as low as 2 Hz). which can be mistaken for normal heartbeat.
NASA Astrophysics Data System (ADS)
Engin, Doruk; Chuang, Ti; Litvinovitch, Slava; Storm, Mark
2017-08-01
Fibertek has developed and demonstrated an ideal high-power; low-risk; low-size, weight, and power (SWaP) 2051 nm laser design meeting the lidar requirements for satellite-based global measurement of carbon dioxide (CO2). The laser design provides a path to space for either a coherent lidar approach being developed by NASA Jet Propulsion Laboratory (JPL)1,2 or an Integrated Path Differential Lidar (IPDA) approach developed by Harris Corp using radio frequency (RF) modulation and being flown as part of a NASA Earth Venture Suborbital Mission—NASA's Atmospheric Carbon and Transport - America.3,4 The thulium (Tm) fiber laser amplifies a <500 kHz linewidth distributed feedback (DFB) laser up to 25 W average power in a polarization maintaining (PM) fiber. The design manages and suppresses all deleterious non-linear effects that can cause linewidth broadening or amplified spontaneous emission (ASE) and meets all lidar requirements. We believe the core laser components, architecture, and design margins can support a coherent or IPDA lidar 10-year space mission. With follow-on funding Fibertek can adapt an existing space-based Technology Readiness Level 6 (TRL-6), 20 W erbium fiber laser package for this Tm design and enable a near-term space mission with an electrical-to-optical (e-o) efficiency of <20%. A cladding-pumped PM Tm fiber-based amplifier optimized for high efficiency and high-power operation at 2051 nm is presented. The two-stage amplifier has been demonstrated to achieve 25 W average power and <16 dB polarization extinction ratio (PER) out of a single-mode PM fiber using a <500 kHz linewidth JPL DFB laser5-7 and 43 dB gain. The power amplifier's optical conversion efficiency is 53%. An internal efficiency of 58% is calculated after correcting for passive losses. The two-stage amplifier sustains its highly efficient operation for a temperature range of 5-40°C. The absence of stimulated Brillouin scattering (SBS) for the narrow linewidth amplification shows promise for further power scaling.
The 20 GHz spacecraft FET solid state transmitter
NASA Technical Reports Server (NTRS)
1983-01-01
The engineering development of a solid state transmitter amplifier operating in the 20 GHz frequency band using GaAs field effect transistors (FETs) was detailed. The major efforts include GaAs FET device development, single-ended amplifier stage, balanced amplifier stage, cascaded stage and radial combiner designs, and amplifier integration and test. A multistage GaAs FET amplifier capable of 8.2 W CW output over the 17.9 to 19.1 GHz frequency band was developed. The GaAs FET devices developed represent state of the art FET power device technology. Further device improvements are necessary to increase the bandwidth to 2.5 GHz, improve dc-to-RF efficiency, and increase power capability at the device level. Higher power devices will simplify the amplifier combining scheme, reducing the size and weight of the overall amplifier.
Maximizing power output from continuous-wave single-frequency fiber amplifiers.
Ward, Benjamin G
2015-02-15
This Letter reports on a method of maximizing the power output from highly saturated cladding-pumped continuous-wave single-frequency fiber amplifiers simultaneously, taking into account the stimulated Brillouin scattering and transverse modal instability thresholds. This results in a design figure of merit depending on the fundamental mode overlap with the doping profile, the peak Brillouin gain coefficient, and the peak mode coupling gain coefficient. This figure of merit is then numerically analyzed for three candidate fiber designs including standard, segmented acoustically tailored, and micro-segmented acoustically tailored photonic-crystal fibers. It is found that each of the latter two fibers should enable a 50% higher output power than standard photonic crystal fiber.
Advances in high power linearly polarized fiber laser and its application
NASA Astrophysics Data System (ADS)
Zhou, Pu; Huang, Long; Ma, Pengfei; Xu, Jiangming; Su, Rongtao; Wang, Xiaolin
2017-10-01
Fiber lasers are now attracting more and more research interest due to their advantages in efficiency, beam quality and flexible operation. Up to now, most of the high power fiber lasers have random distributed polarization state. Linearlypolarized (LP) fiber lasers, which could find wide application potential in coherent detection, coherent/spectral beam combining, nonlinear frequency conversion, have been a research focus in recent years. In this paper, we will present a general review on the achievements of various kinds of high power linear-polarized fiber laser and its application. The recent progress in our group, including power scaling by using power amplifier with different mechanism, high power linearly polarized fiber laser with diversified properties, and various applications of high power linear-polarized fiber laser, are summarized. We have achieved 100 Watt level random distributed feedback fiber laser, kilowatt level continuous-wave (CW) all-fiber polarization-maintained fiber amplifier, 600 watt level average power picosecond polarization-maintained fiber amplifier and 300 watt level average power femtosecond polarization-maintained fiber amplifier. In addition, high power linearly polarized fiber lasers have been successfully applied in 5 kilowatt level coherent beam combining, structured light field and ultrasonic generation.
A Q-band two-beam cryogenic receiver for the Tianma Radio Telescope
NASA Astrophysics Data System (ADS)
Zhong, Wei-Ye; Dong, Jian; Gou, Wei; Yu, Lin-Feng; Wang, Jin-Qing; Xia, Bo; Jiang, Wu; Liu, Cong; Zhang, Hui; Shi, Jun; Yin, Xiao-Xing; Shi, Sheng-Cai; Liu, Qing-Hui; Shen, Zhi-Qiang
2018-04-01
A Q-band two-beam cryogenic receiver for the Tianma Radio Telescope (TMRT) has been developed, and it uses the independently-developed key microwave and millimeter-wave components operating from 35 to 50GHz with a fractional bandwidth of 35%. The Q-band receiver consists of three parts: optics, cold unit assembly and warm unit assembly, and it can receive simultaneously the left-handed and right-handed circularly polarized waves. The cold unit assembly of each beam is composed of a feed horn, a noise injection coupler, a differential phase shifter, an orthomode transducer and two low-noise amplifiers, and it works at a temperature range near 20 K to greatly improve the detection sensitivity of the receiving system. The warm unit assembly includes four radio-frequency amplifiers, four radio-frequency high-pass filters, four waveguide biased mixers, four 4–12 GHz intermediate-frequency amplifiers and one 31–38 GHz frequency synthesizer. The measured Q-band four-channel receiver noise temperatures are roughly 30–40 K. In addition, the single-dish spectral line and international very long baseline interferometry (VLBI) observations between the TMRT and East Asia VLBI Network at the Q-band have been successfully carried out, demonstrating the advantages of the TMRT equipped with the state-of-the-art Q-band receiver.
High Efficiency Ka-Band Solid State Power Amplifier Waveguide Power Combiner
NASA Technical Reports Server (NTRS)
Wintucky, Edwin G.; Simons, Rainee N.; Chevalier, Christine T.; Freeman, Jon C.
2010-01-01
A novel Ka-band high efficiency asymmetric waveguide four-port combiner for coherent combining of two Monolithic Microwave Integrated Circuit (MMIC) Solid State Power Amplifiers (SSPAs) having unequal outputs has been successfully designed, fabricated and characterized over the NASA deep space frequency band from 31.8 to 32.3 GHz. The measured combiner efficiency is greater than 90 percent, the return loss greater than 18 dB and input port isolation greater than 22 dB. The manufactured combiner was designed for an input power ratio of 2:1 but can be custom designed for any arbitrary power ratio. Applications considered are NASA s space communications systems needing 6 to 10 W of radio frequency (RF) power. This Technical Memorandum (TM) is an expanded version of the article recently published in Institute of Engineering and Technology (IET) Electronics Letters.
A Low Cost Traveling Wave Tube for Wireless Communications
NASA Technical Reports Server (NTRS)
Vancil, Bernard Kenneth; Wintucky, Edwin G.; Williams, W. D. (Technical Monitor)
2002-01-01
Demand for high data rate wireless communications is pushing up amplifier power, bandwidth and frequency requirements. Some systems are using vacuum electron devices again because solid-state power amplifiers are not able to efficiently meet the new requirements. The traveling wave tube is the VED of choice because of its excellent broadband capability as well as high power efficiency and frequency. But TWTs are very expensive on a per watt basis below about 200 watts of output power. We propose a new traveling wave tube that utilizes cathode ray tube construction technology and electrostatic focusing. We believe the tube can be built in quantity for under $1,000 each. We discuss several traveling wave tube slow wave circuits that lend themselves to the new construction. We will present modeling results and data on prototype devices.
RESONANT CAVITY EXCITATION SYSTEM
Baker, W.R.; Kerns, Q.A.; Riedel, J.
1959-01-13
An apparatus is presented for exciting a cavity resonator with a minimum of difficulty and, more specifically describes a sub-exciter and an amplifier type pre-exciter for the high-frequency cxcitation of large cavities. Instead of applying full voltage to the main oscillator, a sub-excitation voltage is initially used to establish a base level of oscillation in the cavity. A portion of the cavity encrgy is coupled to the input of the pre-exciter where it is amplified and fed back into the cavity when the pre-exciter is energized. After the voltage in the cavity resonator has reached maximum value under excitation by the pre-exciter, full voltage is applied to the oscillator and the pre-exciter is tunned off. The cavity is then excited to the maximum high voltage value of radio frequency by the oscillator.
Yu, Zhanghao; Yang, Xi; Chung, SungWon
2018-01-29
High-resolution electronic interface circuits for transducers with nonlinear capacitive impedance need an operational amplifier, which is stable for a wide range of load capacitance. Such operational amplifier in a conventional design requires a large area for compensation capacitors, increasing costs and limiting applications. In order to address this problem, we present a gain-boosted two-stage operational amplifier, whose frequency response compensation capacitor size is insensitive to the load capacitance and also orders of magnitude smaller compared to the conventional Miller-compensation capacitor that often dominates chip area. By exploiting pole-zero cancellation between a gain-boosting stage and the main amplifier stage, the compensation capacitor of the proposed operational amplifier becomes less dependent of load capacitance, so that it can also operate with a wide range of load capacitance. A prototype operational amplifier designed in 0.13-μm complementary metal-oxide-semiconductor (CMOS) with a 400-fF compensation capacitor occupies 900- μ m 2 chip area and achieves 0.022-2.78-MHz unity gain bandwidth and over 65 ∘ phase margin with a load capacitance of 0.1-15 nF. The prototype amplifier consumes 7.6 μ W from a single 1.0-V supply. For a given compensation capacitor size and a chip area, the prototype design demonstrates the best reported performance trade-off on unity gain bandwidth, maximum stable load capacitance, and power consumption.
Temperature measurements in an ytterbium fiber amplifier up to the mode instability threshold
NASA Astrophysics Data System (ADS)
Beier, F.; Heinzig, M.; Sattler, Bettina; Walbaum, Till; Haarlammert, N.; Schreiber, T.; Eberhardt, R.; Tünnermann, A.
2016-03-01
We report on the measurement of the longitudinal temperature distribution in a fiber amplifier fiber during high power operation. The measurement signal of an optical frequency domain reflectometer is coupled to an ytterbium doped amplifier fiber via a wavelength division multiplexer. The longitudinal temperature distribution was examined for different pump powers with a sub mm resolution. The results show even small temperature variations induced by slight changes of the environmental conditions along the fiber. The mode instability threshold of the fiber under investigation was determined to be 480W and temperatures could be measured overall the measured output power values.
Covert laser remote sensing and vibrometry
NASA Technical Reports Server (NTRS)
Maleki, Lutfollah (Inventor); Yu, Nan (Inventor); Matsko, Andrey B. (Inventor); Savchenkov, Anatoliy (Inventor)
2012-01-01
Designs of single-beam laser vibrometry systems and methods. For example, a method for detecting vibrations of a target based on optical sensing is provided to include operating a laser to produce a laser probe beam at a laser frequency and modulated at a modulation frequency onto a target; collecting light at or near the laser to collect light from the target while the target is being illuminated by the laser probe beam through an optical receiver aperture; using a narrow-band optical filter centered at the laser frequency to filter light collected from the optical receiver aperture to transmit light at the laser frequency while blocking light at other frequencies; using an optical detector to convert filtered light from the narrow-band optical filter to produce a receiver electrical signal; using a lock-in amplifier to detect and amplify the receiver electrical signal at the modulation frequency while rejecting signal components at other frequencies to produce an amplified receiver electrical signal; processing the amplified receiver electrical signal to extract information on vibrations of the target carried by reflected laser probe beam in the collected light; and controlling optical power of the laser probe beam at the target to follow optical power of background illumination at the target.
Tunable microstrip SQUID amplifiers for the Gen 2 Axion Dark Matter eXperiment (ADMX)
NASA Astrophysics Data System (ADS)
O'Kelley, Sean; Hilton, Gene; Clarke, John; ADMX Collaboration
2016-03-01
We present a series of tunable microstrip SQUID (Superconducting Quantum Interference Device) amplifiers (MSAs) for installation in ADMX. The axion dark matter candidate is detected via Primakoff conversion to a microwave photon in a high-Q (~100,000) tunable microwave cavity cooled with a dilution refrigerator in a 7-tesla magnetic field. The microwave photon frequency ν is a function of the unknown axion mass, so both the cavity and amplifier must be scanned over a wide frequency range. An MSA is a linear, phase-preserving amplifier consisting of a square washer loop, fabricated from a thin Nb film, incorporating two Josephson tunnel junctions with resistive shunts to prevent hysteresis. The input is coupled via a microstrip made from a square Nb coil deposited over the washer with an intervening insulating layer. Tunability is achieved by terminating the microstrip with GaAs varactors that operate below 100 mK. By varying the varactor capacitance with a bias voltage, the resonant frequency is varied by up to a factor of 2. We demonstrate several devices operating below 100 mK, matched to the discrete operating bands of ADMX at frequencies ranging from 560 MHz to 1 GHz. The MSAs exhibit gains exceeding 20 dB and the associated noise temperatures, measured with a hot/cold load, approach the standard quantum limit (hν/kB) . Supported by DOE Grants DE - FG02 - 97ER41029, DE - FG02 - 96ER40956, DE - AC52 - 07NA27344, DE - AC03 - 76SF00098, and the Livermore LDRD program.
Gated frequency-resolved optical imaging with an optical parametric amplifier
Cameron, S.M.; Bliss, D.E.; Kimmel, M.W.; Neal, D.R.
1999-08-10
A system for detecting objects in a turbid media utilizes an optical parametric amplifier as an amplifying gate for received light from the media. An optical gating pulse from a second parametric amplifier permits the system to respond to and amplify only ballistic photons from the object in the media. 13 figs.
Gated frequency-resolved optical imaging with an optical parametric amplifier
Cameron, Stewart M.; Bliss, David E.; Kimmel, Mark W.; Neal, Daniel R.
1999-01-01
A system for detecting objects in a turbid media utilizes an optical parametric amplifier as an amplifying gate for received light from the media. An optical gating pulse from a second parametric amplifier permits the system to respond to and amplify only ballistic photons from the object in the media.
X-Band, 17-Watt Solid-State Power Amplifier
NASA Technical Reports Server (NTRS)
Mittskus, Anthony; Stone, Ernest; Boger, William; Burgess, David; Honda, Richard; Nuckolls, Carl
2005-01-01
An advanced solid-state power amplifier that can generate an output power of as much as 17 W at a design operating frequency of 8.4 GHz has been designed and constructed as a smaller, lighter, less expensive alternative to traveling-wave-tube X-band amplifiers and to prior solid-state X-band power amplifiers of equivalent output power. This amplifier comprises a monolithic microwave integrated circuit (MMIC) amplifier module and a power-converter module integrated into a compact package (see Figure 1). The amplifier module contains an input variable-gain amplifier (VGA), an intermediate driver stage, a final power stage, and input and output power monitors (see Figure 2). The VGA and the driver amplifier are 0.5-m GaAs-based metal semiconductor field-effect transistors (MESFETs). The final power stage contains four parallel high-efficiency, GaAs-based pseudomorphic high-electron-mobility transistors (PHEMTs). The gain of the VGA is voltage-variable over a range of 10 to 24 dB. To provide for temperature compensation of the overall amplifier gain, the gain-control voltage is generated by an operational-amplifier circuit that includes a resistor/thermistor temperature-sensing network. The driver amplifier provides a gain of 14 dB to an output power of 27 dBm to drive the four parallel output PHEMTs, each of which is nominally capable of putting out as much as 5 W. The driver output is sent to the input terminals of the four parallel PHEMTs through microstrip power dividers; the outputs of these PHEMTs are combined by microstrip power combiners (which are similar to the microstrip power dividers) to obtain the final output power of 17 W.
Garcia, J C; Layton, S A; Rubal, B J
1989-05-01
This study compares the frequency response characteristics of catheter-mounted piezoelectric sound transducers with micromanometric transducers. The tip of a 8F catheter with two piezoelectric transducers and two micromanometers was inserted into a water-filled chamber that had a speaker fixed at one end. The speaker was driven by a power amplifier and sine wave generator. The outputs of the transducers were connected to a low-level amplifier. The piezoelectric transducer behaved as a tunable high-pass filter that could be modified by altering the input impedance of the low level amplifier; the frequency response characteristics were examined at five input impedances ranging from 0.96 to 11.8 megohms. The peak-to-peak outputs of the piezoelectric and pressure transducers were recorded at frequency ranges from DC to 1 kHz with a wide-band oscilloscope. The ratio of the outputs from the piezotransducer and micromanometer (Vph/Vpr) was plotted vs. frequency for each input impedance and analyzed to determine the piezotransducer's output resistance and equivalent capacitance; roll-off frequencies were then calculated. The equivalent capacitance of the piezo-element was determined to be 500-700 picofarads. Series capacitance acted with network resistance to produce a predictable frequency-dependent change in signal amplitude and phase angle. The inherent noise of the pressure transducer was found to be approximately 0.2 mm Hg, while the noise of the piezoelectric transducer was immeasurably low. The piezoelectric phonotransducers were superior to micromanometer transducers in their higher gain and lower noise, suggesting that these transducers may prove useful to physiologic and clinical studies for measuring intravascular sound.
NASA Technical Reports Server (NTRS)
Waldstein, Seth W.; Kortright, Barbosa Miguel A.; Simons, Rainee N.
2017-01-01
The paper presents the architecture of a wideband reconfigurable harmonically-tuned Gallium Nitride (GaN) Solid State Power Amplifier (SSPA) for cognitive radios. When interfaced with the physical layer of a cognitive communication system, this amplifier topology offers broadband high efficiency through the use of multiple tuned input/output matching networks. This feature enables the cognitive radio to reconfigure the operating frequency without sacrificing efficiency. This paper additionally presents as a proof-of-concept the design, fabrication, and test results for a GaN inverse Class-F type amplifier operating at X-band (8.4 GHz) that achieves a maximum output power of 5.14-W, Power Added Efficiency (PAE) of 38.6 percent, and Drain Efficiency (DE) of 48.9 percent under continuous wave (CW) operation.
Josephson junction microwave amplifier in self-organized noise compression mode
Lähteenmäki, Pasi; Vesterinen, Visa; Hassel, Juha; Seppä, Heikki; Hakonen, Pertti
2012-01-01
The fundamental noise limit of a phase-preserving amplifier at frequency is the standard quantum limit . In the microwave range, the best candidates have been amplifiers based on superconducting quantum interference devices (reaching the noise temperature at 700 MHz), and non-degenerate parametric amplifiers (reaching noise levels close to the quantum limit at 8 GHz). We introduce a new type of an amplifier based on the negative resistance of a selectively damped Josephson junction. Noise performance of our amplifier is limited by mixing of quantum noise from Josephson oscillation regime down to the signal frequency. Measurements yield nearly quantum-limited operation, at 2.8 GHz, owing to self-organization of the working point. Simulations describe the characteristics of our device well and indicate potential for wide bandwidth operation. PMID:22355788
Commissioning of two RF operation modes for RF negative ion source experimental setup at HUST
NASA Astrophysics Data System (ADS)
Li, D.; Chen, D.; Liu, K.; Zhao, P.; Zuo, C.; Wang, X.; Wang, H.; Zhang, L.
2017-08-01
An RF-driven negative ion source experimental setup, without a cesium oven and an extraction system, has been built at Huazhong University of Science and Technology (HUST). The working gas is hydrogen, and the typical operational gas pressure is 0.3 Pa. The RF generator is capable of delivering up to 20 kW at 0.9 - 1.1 MHz, and has two operation modes, the fixed-frequency mode and auto-tuning mode. In the fixed-frequency mode, it outputs a steady RF forward power (Pf) at a fixed frequency. In the auto-tuning mode, it adjusts the operating frequency to seek and track the minimum standing wave ratio (SWR) during plasma discharge. To achieve fast frequency tuning, the RF signal source adopts a direct digital synthesizer (DDS). To withstand high SWR during the discharge, a tetrode amplifier is chosen as the final stage amplifier. The trend of maximum power reflection coefficient |ρ|2 at plasma ignition is presented at the fixed frequency of 1.02 MHz with the Pf increasing from 5 kW to 20 kW, which shows the maximum |ρ|2 tends to be "steady" under high RF power. The experiments in auto-tuning mode fail due to over-current protection of screen grid. The possible reason is the relatively large equivalent anode impedance caused by the frequency tuning. The corresponding analysis and possible solution are presented.
High efficiency RF amplifier development over wide dynamic range for accelerator application
NASA Astrophysics Data System (ADS)
Mishra, Jitendra Kumar; Ramarao, B. V.; Pande, Manjiri M.; Joshi, Gopal; Sharma, Archana; Singh, Pitamber
2017-10-01
Superconducting (SC) cavities in an accelerating section are designed to have the same geometrical velocity factor (βg). For these cavities, Radio Frequency (RF) power needed to accelerate charged particles varies with the particle velocity factor (β). RF power requirement from one cavity to other can vary by 2-5 dB within the accelerating section depending on the energy gain in the cavity and beam current. In this paper, we have presented an idea to improve operating efficiency of the SC RF accelerators using envelope tracking technique. A study on envelope tracking technique without feedback is carried out on a 1 kW, 325 MHz, class B (conduction angle of 180 degrees) tuned load power amplifier (PA). We have derived expressions for the efficiency and power output for tuned load amplifier operating on the envelope tracking technique. From the derived expressions, it is observed that under constant load resistance to the device (MOSFET), optimum amplifier efficiency is invariant whereas output power varies with the square of drain bias voltage. Experimental results on 1 kW PA module show that its optimum efficiency is always greater than 62% with variation less than 5% from mean value over 7 dB dynamic range. Low power amplifier modules are the basic building block for the high power amplifiers. Therefore, results for 1 kW PA modules remain valid for the high power solid state amplifiers built using these PA modules. The SC RF accelerators using these constant efficiency power amplifiers can improve overall accelerator efficiency.
High power broadband millimeter wave TWTs
NASA Astrophysics Data System (ADS)
James, Bill G.
1999-05-01
In the early 1980's the requirement for high power broadband millimeter wave sources encouraged the development of microwave vacuum device amplifiers for radar and communication systems. Many government funded programs were implemented for the development of high power broadband millimeter wave amplifiers that would meet the needs of the high power community. The tube design capable of meeting these goals was the slow wave coupled cavity traveling wave device, which had a proven technology base at the lower frequencies (X Band). However scaling this technology to the millimeter frequencies had severe shortcomings in both thermal and manufacturing design. These shortcomings were overcome with the development of the Ladder Circuit technology. In conjunction with the circuit development high power electron beam systems had to be developed for the generation of high rf powers. These beam systems had to be capable of many megawatts of beam power density and high current densities. The cathode technology required to be capable of operating at current densities of 10 amperes per square centimeter at long pulse lengths and high duty cycle. Since the introduction of the Ladder Circuit technology a number of high power broadband millimeter wave amplifiers have been developed using this technology, and have been deployed in operating radar and communication systems. Broadband millimeter wave sources have been manufactured in the frequency range from 27 GHz to 100 GHz with power levels ranging from 100 watts to 50 kilowatts. Today the power levels achieved by these devices are nearing the limits of this technology; therefore to gain a significant increase in power at the millimeter wave frequencies other technologies will have to be considered particularly fast wave devices. This paper will briefly review the ladder circuit technology and present the designs of a number of broadband high power devices developed at Ka and W band. The discussion will include the beam systems employed in these devices which are the highest power density linear beams generated to date. In conclusion the limits of the power generating capability of this technology will be presented.
High Power Broadband Millimeter Wave TWTs
NASA Astrophysics Data System (ADS)
James, Bill G.
1998-04-01
In the early 1980's the requirement for high power broadband millimeter wave sources encouraged the development of microwave vacuum device amplifiers for radar and communication systems. Many government funded programs were implemented for the development of high power broadband millimeter wave amplifiers that would meet the needs of the high power community. The tube design capable of meeting these goals was the slow wave coupled cavity traveling wave device, which had a proven technology base at the lower frequencies (X Band). However scaling this technology to the millimeter frequencies had severe shortcomings in both thermal and manufacturing design. These shortcomings were overcome with the development of the Ladder Circuit technology. In conjunction with the circuit development high power electron beam systems had to be developed for the generation of high rf powers. These beam systems had to be capable of many megawatts of beam power density and high current densities. The cathode technology required to be capable of operating at current densities of 10 amperes per square centimeter at long pulse lengths and high duty cycle. Since the introduction of the Ladder Circuit technology a number of high power broadband millimeter wave amplifiers have been developed and deployed in operating radar and communication systems. Broadband millimeter wave sources have been manufactured in the frequency range from 27 GHz to 100 GHz with power levels ranging from 100 watts CW to 10 kilowatts Peak at W band over a 2 GHz bandwidth. Also a 50 kW peak power and 10 kW average power device at Ka band with 2 GHz bandwidth has been developed. Today the power levels achieved by these devices are nearing the limits of this technology; therefore to gain a significant increase in power at the millimeter wave frequencies, other technologies will have to be considered, particularly fast wave devices. This paper will briefly review the ladder circuit technology and present the designs of a number of broadband high power devices developed at Ka and W band. The discussion will include the beam systems employed in these devices which are the highest power density linear beams generated to date. In conclusion the limits of the power generating capability of this technology will be presented.
Industrial universal electrometer
Cordaro, Joseph V [Martinez, GA; Wood, Michael B [Aiken, SC
2012-07-03
An electrometer for use in measuring current is provided. The electrometer includes an enclosure capable of containing various components of the electrometer. A pre-amplifier is present and is one of the components of the electrometer. The pre-amplifier is contained by the enclosure. The pre-amplifier has a pre-amplifier enclosure that contains the pre-amplifier and provides radio frequency shielding and magnetic shielding to the pre-amplifier.
High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier
NASA Astrophysics Data System (ADS)
Umezawa, T.; Katshima, K.; Kanno, A.; Akahane, K.; Matsumoto, A.; Yamamoto, N.; Kawanishi, T.
2016-02-01
A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.
The 20 GHz spacecraft IMPATT solid state transmitter
NASA Technical Reports Server (NTRS)
Best, T.; Ngan, Y. C.
1986-01-01
The engineering development of a solid-state transmitter amplifier operating in the 20-GHz frequency range is described. This effort involved a multitude of disciplines including IMPATT device development, circulator design, multiple-diode circuit design, and amplifier integration and test. The objective was to develop a transmitter amplifier demonstrating the feasibility of providing an efficient, reliable, lightweight solid-state transmitter to be flown on a 30 to 20 GHz communication demonstration satellite. The work was done under contract from NASA/Lewis Research Center for a period of three years. The result was the development of a GaAs IMPACT diode amplifier capable of an 11-W CW output power and a 2-dB bandwidth of 300 MHz. GaAs IMPATT diodes incorporating diamond heatsink and double-Read doping profile capable of 5.3-W CW oscillator output power and 15.5% efficiency were developed. Up to 19% efficiency was also observed for an output power level of 4.4 W. High performance circulators with a 0.2 dB inserting loss and bandwidth of 5 GHz have also been developed. These represent a significant advance in both device and power combiner circuit technologies in K-band frequencies.
A high efficiency Ku-band radial line relativistic klystron amplifier
DOE Office of Scientific and Technical Information (OSTI.GOV)
Dang, Fangchao; Zhang, Xiaoping, E-mail: zhangxiaoping@nudt.edu.cn; Zhong, Huihuang
2016-07-15
To achieve the gigawatt-level microwave amplification output at Ku-band, a radial-line relativistic klystron amplifier is proposed and investigated in this paper. Different from the annular electron beam in conventional axial relativistic klystron amplifiers, a radial-radiated electron beam is employed in this proposed klystron. Owing to its radially spreading speciality, the electron density and space charge effect are markedly weakened during the propagation in the radial line drift tube. Additionally, the power capacity, especially in the output cavity, is enhanced significantly because of its large volume, which is profitable for the long pulse operation. Particle-in-cell simulation results demonstrate that a highmore » power microwave with the power of 3 GW and the frequency of 14.25 GHz is generated with a 500 kV, 12 kA electron beam excitation and the 30 kW radio-frequency signal injection. The power conversion efficiency is 50%, and the gain is about 50 dB. Meanwhile, there is insignificant electron beam self-excitation in the proposed structure by the adoption of two transverse electromagnetic reflectors. The relative phase difference between the injected signals and output microwaves keeps stable after the amplifier saturates.« less
Design of a CMOS integrated on-chip oscilloscope for spin wave characterization
NASA Astrophysics Data System (ADS)
Egel, Eugen; Meier, Christian; Csaba, György; Breitkreutz-von Gamm, Stephan
2017-05-01
Spin waves can perform some optically-inspired computing algorithms, e.g. the Fourier transform, directly than it is done with the CMOS logic. This article describes a new approach for on-chip characterization of spin wave based devices. The readout circuitry for the spin waves is simulated with 65-nm CMOS technology models. Commonly used circuits for Radio Frequency (RF) receivers are implemented to detect a sinusoidal ultra-wideband (5-50 GHz) signal with an amplitude of at least 15 μV picked up by a loop antenna. First, the RF signal is amplified by a Low Noise Amplifier (LNA). Then, it is down-converted by a mixer to Intermediate Frequency (IF). Finally, an Operational Amplifier (OpAmp) brings the IF signal to higher voltages (50-300 mV). The estimated power consumption and the required area of the readout circuit is approximately 55.5 mW and 0.168 mm2, respectively. The proposed On-Chip Oscilloscope (OCO) is highly suitable for on-chip spin wave characterization regarding the frequency, amplitude change and phase information. It offers an integrated low power alternative to current spin wave detecting systems.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Takano, H.; Hosogi, K.; Kato, T.
1995-05-01
A fully ion-implanted self-aligned T-shaped gate Ga As metal-semiconductor field-effect transistor (MESFET) with high frequency and extremely low-noise performance has been successfully fabricated for super low-noise microwave monolithic integrated circuit (MMIC) amplifiers. A subhalf-micrometer gate structure composed of WSi/Ti/Mo/Au is employed to reduce gate resistance effectively. This multilayer gate structure is formed by newly developed dummy SiON self-alignment technology and a photoresist planarization process. At an operating frequency of 12 GHz, a minimum noise figure of 0.87 dB with an associated gain of 10.62 dB has been obtained. Based on the novel FET process, a low-noise single-stage MMIC amplifier withmore » an excellent low-noise figure of 1.2 dB with an associated gain of 8 dB in the 14 GHz band has been realized. This is the lowest noise figure ever reported at this frequency for low-noise MMICs based on ion-implanted self-aligned gate MESFET technology. 14 refs., 9 figs.« less
Karasaki, Yuji; Kashiwazaki, Hiroshi
2004-01-01
To investigate whether population differences in food and/or lifestyle could affect the distribution frequencies of polymorphism in the gene for beta3-adrenergic receptor (beta3-AR), the frequency of Trp64Arg polymorphism was studied among Bolivian people living in rural areas of high (about 4000 m above sea level) and low (about 300 m above sea level) altitudes. Genomic DNA samples of Bolivian subjects (n=508) were amplified by polymerase chain reaction (PCR) for part of the beta3-AR gene. The amplified PCR products were digested with restriction enzyme NciI and analysed by agarose gel electrophoresis. We found no significant difference in the frequency of Arg allele in the beta3-AR gene between 331 native low-altitude Bolivian subjects (18.1%) and 177 native high-altitude Bolivian subjects (17.5%). Body mass index was not associated with Trp64Arg polymorphism among native Bolivian adults. The frequency of this allele in the complete Bolivian population (18%) was lower than that reported in Pima Indians (32%), is comparable to the Japanese (19%) and is higher than several ethnic groups, including Finns (12%) and French (4%). Our data indicate that the altitude-related lifestyle of a population has had little influence on the frequency of Trp64Arg polymorphism and obesity in Bolivian natives.
Coherently coupled high-power fiber arrays
NASA Astrophysics Data System (ADS)
Anderegg, Jesse; Brosnan, Stephen; Cheung, Eric; Epp, Paul; Hammons, Dennis; Komine, Hiroshi; Weber, Mark; Wickham, Michael
2006-02-01
A four-element fiber array has demonstrated 470 watts of coherently phased, linearly polarized light energy in a single far-field spot. Each element consists of a single-mode fiber-amplifier chain. Phase control of each element is achieved with a Lithium-Niobate phase modulator. A master laser provides a linearly polarized, narrow linewidth signal that is split into five channels. Four channels are individually amplified using polarization maintaining fiber power amplifiers. The fifth channel is used as a reference arm. It is frequency shifted and then combined interferometrically with a portion of each channel's signal. Detectors sense the heterodyne modulation signal, and an electronics circuit measures the relative phase for each channel. Compensating adjustments are then made to each channel's phase modulator. This effort represents the results of a multi-year effort to achieve high power from a single element fiber amplifier and to understand the important issues involved in coherently combining many individual elements to obtain sufficient optical power for directed energy weapons. Northrop Grumman Corporation and the High Energy Laser Joint Technology Office jointly sponsored this work.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Tracy, Lisa A.; Luhman, Dwight R.; Carr, Stephen M.
We use a cryogenic high-electron-mobility transistor circuit to amplify the current from a single electron transistor, allowing for demonstration of single shot readout of an electron spin on a single P donor in Si with 100 kHz bandwidth and a signal to noise ratio of ~9. In order to reduce the impact of cable capacitance, the amplifier is located adjacent to the Si sample, at the mixing chamber stage of a dilution refrigerator. For a current gain of ~2.7 x 10 3 the power dissipation of the amplifier is 13 μW, the bandwidth is ~1.3 MHz, and for frequencies abovemore » 300 kHz the current noise referred to input is ≤ 70 fA/√Hz. Furthermore, with this amplification scheme, we are able to observe coherent oscillations of a P donor electron spin in isotopically enriched 28Si with 96% visibility.« less
Tracy, Lisa A.; Luhman, Dwight R.; Carr, Stephen M.; ...
2016-02-08
We use a cryogenic high-electron-mobility transistor circuit to amplify the current from a single electron transistor, allowing for demonstration of single shot readout of an electron spin on a single P donor in Si with 100 kHz bandwidth and a signal to noise ratio of ~9. In order to reduce the impact of cable capacitance, the amplifier is located adjacent to the Si sample, at the mixing chamber stage of a dilution refrigerator. For a current gain of ~2.7 x 10 3 the power dissipation of the amplifier is 13 μW, the bandwidth is ~1.3 MHz, and for frequencies abovemore » 300 kHz the current noise referred to input is ≤ 70 fA/√Hz. Furthermore, with this amplification scheme, we are able to observe coherent oscillations of a P donor electron spin in isotopically enriched 28Si with 96% visibility.« less
Frequency stabilization in nonlinear MEMS and NEMS oscillators
Lopez, Omar Daniel; Antonio, Dario
2014-09-16
An illustrative system includes an amplifier operably connected to a phase shifter. The amplifier is configured to amplify a voltage from an oscillator. The phase shifter is operably connected to a driving amplitude control, wherein the phase shifter is configured to phase shift the amplified voltage and is configured to set an amplitude of the phase shifted voltage. The oscillator is operably connected to the driving amplitude control. The phase shifted voltage drives the oscillator. The oscillator is at an internal resonance condition, based at least on the amplitude of the phase shifted voltage, that stabilizes frequency oscillations in the oscillator.
NASA Technical Reports Server (NTRS)
Kuzyuta, E. I.
1974-01-01
A transistorized spectrometric amplifier with a shaper is reported that selects the shape of the frequency characteristic of the amplifying channel for which the primary frequency spectrum of the signal will pass, but where the noise spectrum is limited to the maximum. A procedure is presented for selecting the shaping circuits and their inclusion principles.
Skupsky, S.; Kessler, T.J.; Short, R.W.; Craxton, S.; Letzring, S.A.; Soures, J.
1991-09-10
In an SSD (smoothing by spectral dispersion) system which reduces the time-averaged spatial variations in intensity of the laser light to provide uniform illumination of a laser fusion target, an electro-optic phase modulator through which a laser beam passes produces a broadband output beam by imposing a frequency modulated bandwidth on the laser beam. A grating provides spatial and angular spectral dispersion of the beam. Due to the phase modulation, the frequencies (''colors'') cycle across the beam. The dispersed beam may be amplified and frequency converted (e.g., tripled) in a plurality of beam lines. A distributed phase plate (DPP) in each line is irradiated by the spectrally dispersed beam and the beam is focused on the target where a smooth (uniform intensity) pattern is produced. The color cycling enhances smoothing and the use of a frequency modulated laser pulse prevents the formation of high intensity spikes which could damage the laser medium in the power amplifiers. 8 figures.
Skupsky, Stanley; Kessler, Terrance J.; Short, Robert W.; Craxton, Stephen; Letzring, Samuel A.; Soures, John
1991-01-01
In an SSD (smoothing by spectral dispersion) system which reduces the time-averaged spatial variations in intensity of the laser light to provide uniform illumination of a laser fusion target, an electro-optic phase modulator through which a laser beam passes produces a broadband output beam by imposing a frequency modulated bandwidth on the laser beam. A grating provides spatial and angular spectral dispersion of the beam. Due to the phase modulation, the frequencies ("colors") cycle across the beam. The dispersed beam may be amplified and frequency converted (e.g., tripled) in a plurality of beam lines. A distributed phase plate (DPP) in each line is irradiated by the spectrally dispersed beam and the beam is focused on the target where a smooth (uniform intensity) pattern is produced. The color cycling enhances smoothing and the use of a frequency modulated laser pulse prevents the formation of high intensity spikes which could damage the laser medium in the power amplifiers.
Human Pulse Wave Measurement by MEMS Electret Condenser Microphone
NASA Astrophysics Data System (ADS)
Nomura, Shusaku; Hanasaka, Yasushi; Ishiguro, Tadashi; Ogawa, Hiroshi
A micro Electret Condenser Microphone (ECM) fabricated by Micro Electro Mechanical System (MEMS) technology was employed as a novel apparatus for human pulse wave measurement. Since ECM frequency response characteristic, i.e. sensitivity, logically maintains a constant level at lower than the resonance frequency (stiffness control), the slightest pressure difference at around 1.0Hz generated by human pulse wave is expected to detect by MEMS-ECM. As a result of the verification of frequency response of MEMS-ECM, it was found that -20dB/dec of reduction in the sensitivity around 1.0Hz was engendered by a high input-impedance amplifier, i.e. the field effect transistor (FET), mounted near MEMS chip for amplifying tiny ECM signal. Therefore, MEMS-ECM is assumed to be equivalent with a differentiation circuit at around human pulse frequency. Introducing compensation circuit, human pulse wave was successfully obtained. In addition, the radial and ulnar artery tracing, and pulse wave velocity measurement at forearm were demonstrated; as illustrating a possible application of this micro device.
Higher Order Modulation Intersymbol Interference Caused by Traveling-wave Tube Amplifiers
NASA Technical Reports Server (NTRS)
Kory, Carol L.; Andro, Monty; Williams, W. D. (Technical Monitor)
2002-01-01
For the first time, a time-dependent, physics-based computational model has been used to provide a direct description of the effects of the traveling wave tube amplifier (TWTA) on modulated digital signals. The TWT model comprehensively takes into account the effects of frequency dependent AM/AM and AM/PM conversion; gain and phase ripple; drive-induced oscillations; harmonic generation; intermodulation products; and backward waves, Thus, signal integrity can be investigated in the presence of these sources of potential distortion as a function of the physical geometry and operating characteristics of the high power amplifier and the operational digital signal. This method promises superior predictive fidelity compared to methods using TWT models based on swept-amplitude and/or swept-frequency data. First, the TWT model using the three dimensional (3D) electromagnetic code MAFIA is presented. Then, this comprehensive model is used to investigate approximations made in conventional TWT black-box models used in communication system level simulations, To quantitatively demonstrate the effects these approximations have on digital signal performance predictions, including intersymbol interference (ISI), the MAFIA results are compared to the system level analysis tool, Signal Processing, Workstation (SPW), using high order modulation schemes including 16 and 64-QAM.
An improved model to predict bandwidth enhancement in an inductively tuned common source amplifier.
Reza, Ashif; Misra, Anuraag; Das, Parnika
2016-05-01
This paper presents an improved model for the prediction of bandwidth enhancement factor (BWEF) in an inductively tuned common source amplifier. In this model, we have included the effect of drain-source channel resistance of field effect transistor along with load inductance and output capacitance on BWEF of the amplifier. A frequency domain analysis of the model is performed and a closed-form expression is derived for BWEF of the amplifier. A prototype common source amplifier is designed and tested. The BWEF of amplifier is obtained from the measured frequency response as a function of drain current and load inductance. In the present work, we have clearly demonstrated that inclusion of drain-source channel resistance in the proposed model helps to estimate the BWEF, which is accurate to less than 5% as compared to the measured results.
Triple-mode single-transistor graphene amplifier and its applications.
Yang, Xuebei; Liu, Guanxiong; Balandin, Alexander A; Mohanram, Kartik
2010-10-26
We propose and experimentally demonstrate a triple-mode single-transistor graphene amplifier utilizing a three-terminal back-gated single-layer graphene transistor. The ambipolar nature of electronic transport in graphene transistors leads to increased amplifier functionality as compared to amplifiers built with unipolar semiconductor devices. The ambipolar graphene transistors can be configured as n-type, p-type, or hybrid-type by changing the gate bias. As a result, the single-transistor graphene amplifier can operate in the common-source, common-drain, or frequency multiplication mode, respectively. This in-field controllability of the single-transistor graphene amplifier can be used to realize the modulation necessary for phase shift keying and frequency shift keying, which are widely used in wireless applications. It also offers new opportunities for designing analog circuits with simpler structure and higher integration densities for communications applications.
670-GHz Schottky Diode-Based Subharmonic Mixer with CPW Circuits and 70-GHz IF
NASA Technical Reports Server (NTRS)
Chattopadhyay, Goutam; Schlecht, Erich T.; Lee, Choonsup; Lin, Robert H.; Gill, John J.; Mehdi, Imran; Sin, Seth; Deal, William; Loi, Kwok K.; Nam, Peta;
2012-01-01
GaAs-based, sub-harmonically pumped Schottky diode mixers offer a number of advantages for array implementation in a heterodyne receiver system. Since the radio frequency (RF) and local oscillator (LO) signals are far apart, system design becomes much simpler. A proprietary planar GaAs Schottky diode process was developed that results in very low parasitic anodes that have cutoff frequencies in the tens of terahertz. This technology enables robust implementation of monolithic mixer and frequency multiplier circuits well into the terahertz frequency range. Using optical and e-beam lithography, and conventional epitaxial layer design with innovative usage of GaAs membranes and metal beam leads, high-performance terahertz circuits can be designed with high fidelity. All of these mixers use metal waveguide structures for housing. Metal machined structures for RF and LO coupling hamper these mixers to be integrated in multi-pixel heterodyne array receivers for spectroscopic and imaging applications. Moreover, the recent developments of terahertz transistors on InP substrate provide an opportunity, for the first time, to have integrated amplifiers followed by Schottky diode mixers in a heterodyne receiver at these frequencies. Since the amplifiers are developed on a planar architecture to facilitate multi-pixel array implementation, it is quite important to find alternative architecture to waveguide-based mixers.
Highly Efficient Amplifier for Ka-Band Communications
NASA Technical Reports Server (NTRS)
1996-01-01
An amplifier developed under a Small Business Innovation Research (SBIR) contract will have applications for both satellite and terrestrial communications. This power amplifier uses an innovative series bias arrangement of active devices to achieve over 40-percent efficiency at Ka-band frequencies with an output power of 0.66 W. The amplifier is fabricated on a 2.0- by 3.8-square millimeter chip through the use of Monolithic Microwave Integrated Circuit (MMIC) technology, and it uses state-of-the-art, Pseudomorphic High-Electron-Mobility Transistor (PHEMT) devices. Although the performance of the MMIC chip depends on these high-performance devices, the real innovations here are a unique series bias scheme, which results in a high-voltage chip supply, and careful design of the on-chip planar output stage combiner. This design concept has ramifications beyond the chip itself because it opens up the possibility of operation directly from a satellite power bus (usually 28 V) without a dc-dc converter. This will dramatically increase the overall system efficiency. Conventional microwave power amplifier designs utilize many devices all connected in parallel from the bias supply. This results in a low-bias voltage, typically 5 V, and a high bias current. With this configuration, substantial I(sup 2) R losses (current squared times resistance) may arise in the system bias-distribution network. By placing the devices in a series bias configuration, the total current is reduced, leading to reduced distribution losses. Careful design of the on-chip planar output stage power combiner is also important in minimizing losses. Using these concepts, a two-stage amplifier was designed for operation at 33 GHz and fabricated in a standard MMIC foundry process with 0.20-m PHEMT devices. Using a 20-V bias supply, the amplifier achieved efficiencies of over 40 percent with an output power of 0.66 W and a 16-dB gain over a 2-GHz bandwidth centered at 33 GHz. With a 28-V bias, a power level of 1.1 W was achieved with a 12-dB gain and a 36-percent efficiency. This represents the best reported combination of power and efficiency at this frequency. In addition to delivering excellent power and gain, this Ka-band MMIC power amplifier has an efficiency that is 10 percent greater than existing designs. The unique design offers an excellent match for spacecraft applications since the amplifier supply voltage is closely matched to the typical value of spacecraft bus voltage. These amplifiers may be used alone in applications of 1 W or less, or several may be combined or used in an array to produce moderate power, Ka-band transmitters with minimal power combining and less thermal stress owing to the combination of excellent efficiency and power output. The higher voltage operation of this design may also save mass and power because the dc-dc power converter is replaced with a simpler voltage regulator.
Light amplification by seeded Kerr instability
NASA Astrophysics Data System (ADS)
Vampa, G.; Hammond, T. J.; Nesrallah, M.; Naumov, A. Yu.; Corkum, P. B.; Brabec, T.
2018-02-01
Amplification of femtosecond laser pulses typically requires a lasing medium or a nonlinear crystal. In either case, the chemical properties of the lasing medium or the momentum conservation in the nonlinear crystal constrain the frequency and the bandwidth of the amplified pulses. We demonstrate high gain amplification (greater than 1000) of widely tunable (0.5 to 2.2 micrometers) and short (less than 60 femtosecond) laser pulses, up to intensities of 1 terawatt per square centimeter, by seeding the modulation instability in an Y3Al5O12 crystal pumped by femtosecond near-infrared pulses. Our method avoids constraints related to doping and phase matching and therefore can occur in a wider pool of glasses and crystals even at far-infrared frequencies and for single-cycle pulses. Such amplified pulses are ideal to study strong-field processes in solids and highly excited states in gases.
Amplifiers dedicated for large area SiC photodiodes
NASA Astrophysics Data System (ADS)
Doroz, P.; Duk, M.; Korwin-Pawlowski, M. L.; Borecki, M.
2016-09-01
Large area SiC photodiodes find applications in optoelectronic sensors working at special conditions. These conditions include detection of UV radiation in harsh environment. Moreover, the mentioned sensors have to be selective and resistant to unwanted signals. For this purpose, the modulation of light at source unit and the rejection of constant current and low frequency component of signal at detector unit are used. The popular frequency used for modulation in such sensor is 1kHz. The large area photodiodes are characterized by a large capacitance and low shunt resistance that varies with polarization of the photodiode and can significantly modify the conditions of signal pre-amplification. In this paper two pre-amplifiers topology are analyzed: the transimpedance amplifier and the non-inverting voltage to voltage amplifier with negative feedback. The feedback loops of both pre-amplifiers are equipped with elements used for initial constant current and low frequency signals rejections. Both circuits are analyzed and compared using simulation and experimental approaches.
NASA Astrophysics Data System (ADS)
Mhatre, Natasha; Robert, Daniel
2018-05-01
Tree cricket hearing shows all the features of an actively amplified auditory system, particularly spontaneous oscillations (SOs) of the tympanal membrane. As expected from an actively amplified auditory system, SO frequency and the peak frequency in evoked responses as observed in sensitivity spectra are correlated. Sensitivity spectra also show compressive non-linearity at this frequency, i.e. a reduction in peak height and sharpness with increasing stimulus amplitude. Both SO and amplified frequency also change with ambient temperature, allowing the auditory system to maintain a filter that is matched to song frequency. In tree crickets, remarkably, song frequency varies with ambient temperature. Interestingly, active amplification has been reported to be switched ON and OFF. The mechanism of this switch is as yet unknown. In order to gain insights into this switch, we recorded and analysed SOs as the auditory system transitioned from the passive (OFF) state to the active (ON) state. We found that while SO amplitude did not follow a fixed pattern, SO frequency changed during the ON-OFF transition. SOs were first detected above noise levels at low frequencies, sometimes well below the known song frequency range (0.5-1 kHz lower). SO frequency was observed to increase over the next ˜30 minutes, in the absence of any ambient temperature change, before settling at a frequency within the range of conspecific song. We examine the frequency shift in SO spectra with temperature and during the ON/OFF transition and discuss the mechanistic implications. To our knowledge, such modulation of active auditory amplification, and its dynamics are unique amongst auditory animals.
Advanced Concepts in Josephson Junction Reflection Amplifiers
NASA Astrophysics Data System (ADS)
Lähteenmäki, Pasi; Vesterinen, Visa; Hassel, Juha; Paraoanu, G. S.; Seppä, Heikki; Hakonen, Pertti
2014-06-01
Low-noise amplification at microwave frequencies has become increasingly important for the research related to superconducting qubits and nanoelectromechanical systems. The fundamental limit of added noise by a phase-preserving amplifier is the standard quantum limit, often expressed as noise temperature . Towards the goal of the quantum limit, we have developed an amplifier based on intrinsic negative resistance of a selectively damped Josephson junction. Here we present measurement results on previously proposed wide-band microwave amplification and discuss the challenges for improvements on the existing designs. We have also studied flux-pumped metamaterial-based parametric amplifiers, whose operating frequency can be widely tuned by external DC-flux, and demonstrate operation at pumping, in contrast to the typical metamaterial amplifiers pumped via signal lines at.
Active rc filter permits easy trade-off of amplifier gain and sensitivity to gain
NASA Technical Reports Server (NTRS)
Kerwin, W. J.; Shaffer, C. V.
1968-01-01
Passive RC network was designed with zeros of transmission in the right half of the complex frequency plane in the feedback loop of a simple negative-gain amplifier. The proper positioning provides any desired trade-off between amplifier gain and sensitivity to amplifier gain.
Yang, Xi
2018-01-01
High-resolution electronic interface circuits for transducers with nonlinear capacitive impedance need an operational amplifier, which is stable for a wide range of load capacitance. Such operational amplifier in a conventional design requires a large area for compensation capacitors, increasing costs and limiting applications. In order to address this problem, we present a gain-boosted two-stage operational amplifier, whose frequency response compensation capacitor size is insensitive to the load capacitance and also orders of magnitude smaller compared to the conventional Miller-compensation capacitor that often dominates chip area. By exploiting pole-zero cancellation between a gain-boosting stage and the main amplifier stage, the compensation capacitor of the proposed operational amplifier becomes less dependent of load capacitance, so that it can also operate with a wide range of load capacitance. A prototype operational amplifier designed in 0.13-μm complementary metal–oxide–semiconductor (CMOS) with a 400-fF compensation capacitor occupies 900-μm2 chip area and achieves 0.022–2.78-MHz unity gain bandwidth and over 65∘ phase margin with a load capacitance of 0.1–15 nF. The prototype amplifier consumes 7.6 μW from a single 1.0-V supply. For a given compensation capacitor size and a chip area, the prototype design demonstrates the best reported performance trade-off on unity gain bandwidth, maximum stable load capacitance, and power consumption. PMID:29382183
Op-amp gyrator simulates high Q inductor
NASA Technical Reports Server (NTRS)
Sutherland, W. C.
1977-01-01
Gyrator circuit consisting of dual operational amplifier and four resistors inverts impedance of capacitor to simulate inductor. Synthetic inductor has high Q factor, good stability, wide bandwidth, and easily determined value of inductance that is independent of frequency. It readily lends itself to integrated-circuit applications, including filter networks.
NASA Astrophysics Data System (ADS)
Beier, F.; de Vries, O.; Schreiber, T.; Eberhardt, R.; Tünnermann, A.; Bollig, C.; Hofmeister, P. G.; Schmidt, J.; Reuter, R.
2013-02-01
Scaling of the power yield of offshore wind farms relies on the capacity of the individual wind turbines. This results in a trend to very large rotor diameters, which are difficult to control. It is crucial to monitor the inhomogeneous wind field in front of the wind turbines at different distances to ensure reliable operation and a long lifetime at high output levels. In this contribution, we demonstrate an all-fiber ns-pulsed fiber amplifier based on cost-efficient commercially available components. The amplifier is a suitable source for coherent Doppler lidar pulses making a predictive control of the turbine operation feasible.
Design and Experiment of Electrooculogram (EOG) System and Its Application to Control Mobile Robot
NASA Astrophysics Data System (ADS)
Sanjaya, W. S. M.; Anggraeni, D.; Multajam, R.; Subkhi, M. N.; Muttaqien, I.
2017-03-01
In this paper, we design and investigate a biological signal detection of eye movements (Electrooculogram). To detect a signal of Electrooculogram (EOG) used 4 instrument amplifier process; differential instrumentation amplifier, High Pass Filter (HPF) with 3 stage filters, Low Pass Filter (LPF) with 3 stage filters and Level Shifter circuit. The total of amplifying is 1000 times of gain, with frequency range 0.5-30 Hz. IC OP-Amp OP07 was used for all amplifying process. EOG signal will be read as analog input for Arduino microprocessor, and will interfaced with serial communication to PC Monitor using Processing® software. The result of this research show a differences value of eye movements. Differences signal of EOG have been applied to navigation control of the mobile robot. In this research, all communication process using Bluetooth HC-05.
Multi-path interferometric Josephson directional amplifier for qubit readout
NASA Astrophysics Data System (ADS)
Abdo, Baleegh; Bronn, Nicholas T.; Jinka, Oblesh; Olivadese, Salvatore; Brink, Markus; Chow, Jerry M.
2018-04-01
We realize and characterize a quantum-limited, directional Josephson amplifier suitable for qubit readout. The device consists of two nondegenerate, three-wave-mixing amplifiers that are coupled together in an interferometric scheme, embedded in a printed circuit board. Nonreciprocity is generated by applying a phase gradient between the same-frequency pumps feeding the device, which plays the role of the magnetic field in a Faraday medium. Directional amplification and reflection-gain elimination are induced via wave interference between multiple paths in the system. We measure and discuss the main figures of merit of the device and show that the experimental results are in good agreement with theory. An improved version of this directional amplifier is expected to eliminate the need for bulky, off-chip isolation stages that generally separate quantum systems and preamplifiers in high-fidelity, quantum-nondemolition measurement setups.
Solid-state Terahertz Sources for Space Applications
NASA Technical Reports Server (NTRS)
Maiwald, Frank; Pearson, John C.; Ward, John S.; Schlecht, Erich; Chattopadhyay, Goutam; Gill, John J.; Ferber, R.; Tsang, Raymond; Lin, Robert H.; Peralta, Alejandro;
2004-01-01
This paper discusses the construction of solid-state frequency multiplier chains utilized far teraherz receiver applications such as the Herschel Space Observatory . Emphasis will he placed on the specific requirements to be met and challenges that were encountered. The availability of high power amplifiers at 100 GHz makes it possible to cascade frequency doublers and triplers with sufficient RF power to pump heterodyne receivers at THz frequencies. The environmental and mechanical constraints will be addressed as well as reliability issues.
Low-frequency switching in a transistor amplifier.
Carroll, T L
2003-04-01
It is known from extensive work with the diode resonator that the nonlinear properties of a P-N junction can lead to period doubling, chaos, and other complicated behaviors in a driven circuit. There has been very little work on what happens when more than one P-N junction is present. In this work, the first step towards multiple P-N junction circuits is taken by doing both experiments and simulations with a single-transistor amplifier using a bipolar transistor. Period doubling and chaos are seen when the amplifier is driven with signals between 100 kHz and 1 MHz, and they coincide with a very low frequency switching between different period doubled (or chaotic) wave forms. The switching frequencies are between 5 and 10 Hz. The switching behavior was confirmed in a simplified model of the transistor amplifier.
Synchronous identification of friendly targets
Telle, John M.; Roger, Stutz A.
1998-01-01
A synchronous communication targeting system for use in battle. The present invention includes a transceiver having a stabilizing oscillator, a synchronous amplifier and an omnidirectional receiver, all in electrical communication with each other. A remotely located beacon is attached to a blackbody radiation source and has an amplitude modulator in electrical communication with a optical source. The beacon's amplitude modulator is set so that the optical source transmits radiation frequency at approximately the same or lower amplitude than that of the blackbody radiation source to which the beacon is attached. The receiver from the transceiver is adapted to receive frequencies approximately at or below blackbody radiation signals and sends such signals to the synchronous amplifier. The synchronous amplifier then rectifies and amplifies those signals which correspond to the predetermined frequency to therefore identify whether the blackbody radiation source is friendly or not.
NASA Astrophysics Data System (ADS)
Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya
2015-04-01
A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed. Broadband QD optical gain material was used to achieve Gbps-order high-speed optical data transmission, and an optical gain change as high as approximately 6-7 dB was obtained with a low OGM voltage of 2.0 V. Loss of optical power due to insertion of the device was also effectively compensated for by the SOA section. Furthermore, it was confirmed that the QD-OGM/SOA device helped achieve 6.0-Gbps error-free optical data transmission over a 2.0-km-long photonic crystal fiber. We also successfully demonstrated generation of Gbps-order, high-speed, and error-free optical signals in the >5.5-THz broadband optical frequency bandwidth larger than the C-band. These results suggest that the developed monolithically integrated QD-OGM/SOA device will be an advantageous and compact means of increasing the usable optical frequency channels for short-reach communications.
Variational theory of the tapered impedance transformer
NASA Astrophysics Data System (ADS)
Erickson, Robert P.
2018-02-01
Superconducting amplifiers are key components of modern quantum information circuits. To minimize information loss and reduce oscillations, a tapered impedance transformer of new design is needed at the input/output for compliance with other 50 Ω components. We show that an optimal tapered transformer of length ℓ, joining the amplifier to the input line, can be constructed using a variational principle applied to the linearized Riccati equation describing the voltage reflection coefficient of the taper. For an incident signal of frequency ωo, the variational solution results in an infinite set of equivalent optimal transformers, each with the same form for the reflection coefficient, each able to eliminate input-line reflections. For the special case of optimal lossless transformers, the group velocity vg is shown to be constant, with characteristic impedance dependent on frequency ωc = πvg/ℓ. While these solutions inhibit input-line reflections only for frequency ωo, a subset of optimal lossless transformers with ωo significantly detuned from ωc does exhibit a wide bandpass. Specifically, by choosing ωo → 0 (ωo → ∞), we obtain a subset of optimal low-pass (high-pass) lossless tapers with bandwidth (0, ˜ ωc) [(˜ωc, ∞)]. From the subset of solutions, we derive both the wide-band low-pass and high-pass transformers, and we discuss the extent to which they can be realized given fabrication constraints. In particular, we demonstrate the superior reflection response of our high-pass transformer when compared to other taper designs. Our results have application to amplifiers, transceivers, and other components sensitive to impedance mismatch.
Thibierge, C; L'Hôte, D; Ladieu, F; Tourbot, R
2008-10-01
We present a high sensitivity method allowing the measurement of the nonlinear dielectric susceptibility of an insulating material at finite frequency. It has been developed for the study of dynamic heterogeneities in supercooled liquids using dielectric spectroscopy at frequencies 0.05 Hz < or = f < or = 3x10(4) Hz. It relies on the measurement of the third harmonics component of the current flowing out of a capacitor. We first show that standard laboratory electronics (amplifiers and voltage sources) nonlinearities lead to limits on the third harmonics measurements that preclude reaching the level needed by our physical goal, a ratio of the third harmonics to the fundamental signal about 10(-7). We show that reaching such a sensitivity needs a method able to get rid of the nonlinear contributions both of the measuring device (lock-in amplifier) and of the excitation voltage source. A bridge using two sources fulfills only the first of these two requirements, but allows to measure the nonlinearities of the sources. Our final method is based on a bridge with two plane capacitors characterized by different dielectric layer thicknesses. It gets rid of the source and amplifier nonlinearities because in spite of a strong frequency dependence of the capacitor impedance, it is equilibrated at any frequency. We present the first measurements of the physical nonlinear response using our method. Two extensions of the method are suggested.
a Thermoacoustically-Driven Pulse Tube Cryocryocooler Operating around 300HZ
NASA Astrophysics Data System (ADS)
Yu, G. Y.; Zhu, S. L.; Dai, W.; Luo, E. C.
2008-03-01
High frequency operation of the thermoacoustic cryocooler system, i.e. pulse tube cryocooler driven by thermoacoustic engine, leads to reduced size, which is quite attractive to small-scale cryogenic applications. In this work, a no-load coldhead temperature of 77.8 K is achieved on a 292 Hz pulse tube cryocooler driven by a standing-wave thermoacoustic engine with 3.92 MPa helium gas and 1750 W heat input. To improve thermal efficiency, a high frequency thermoacoustic-Stirling heat engine is also built to drive the same pulse tube cryocooler, and a no-load temperature of 109 K was obtained with 4.38 MPa helium gas, 292 Hz working frequency and 400W heating power. Ideas such as tapered resonators, acoustic amplifier tubes and simple thin tubes without reservoir are used to effectively suppress harmonic modes, amplify the acoustic pressure wave available to the pulse tube cryocooler and provide desired acoustic impedance for the pulse tube cryocooler, respectively. Comparison of systems with different thermoacoustic engines is made. Numerical simulations based on the linear thermoacoustic theory have also been done for comparison with experimental results, which shows reasonable agreement.
Single frequency 1083nm ytterbium doped fiber master oscillator power amplifier laser.
Huang, Shenghong; Qin, Guanshi; Shirakawa, Akira; Musha, Mitsuru; Ueda, Ken-Ichi
2005-09-05
Single frequency 1083nm ytterbium fiber master oscillator power amplifier system was demonstrated. The oscillator was a linear fiber cavity with loop mirror filter and polarization controller. The loop mirror with unpumped ytterbium fiber as a narrow bandwidth filter discriminated and selected laser longitudinal modes efficiently. Spatial hole burning effect was restrained by adjusting polarization controller appropriately in the linear cavity. The amplifier was 5 m ytterbium doped fiber pumped by 976nm pigtail coupled laser diode. The linewidth of the single frequency laser was about 2 KHz. Output power up to 177 mW was produced under the launched pump power of 332 mW.
Deng, Haishan; Shang, Erxin; Xiang, Bingren; Xie, Shaofei; Tang, Yuping; Duan, Jin-ao; Zhan, Ying; Chi, Yumei; Tan, Defei
2011-03-15
The stochastic resonance algorithm (SRA) has been developed as a potential tool for amplifying and determining weak chromatographic peaks in recent years. However, the conventional SRA cannot be applied directly to ultra-performance liquid chromatography/time-of-flight mass spectrometry (UPLC/TOFMS). The obstacle lies in the fact that the narrow peaks generated by UPLC contain high-frequency components which fall beyond the restrictions of the theory of stochastic resonance. Although there already exists an algorithm that allows a high-frequency weak signal to be detected, the sampling frequency of TOFMS is not fast enough to meet the requirement of the algorithm. Another problem is the depression of the weak peak of the compound with low concentration or weak detection response, which prevents the simultaneous determination of multi-component UPLC/TOFMS peaks. In order to lower the frequencies of the peaks, an interpolation and re-scaling frequency stochastic resonance (IRSR) is proposed, which re-scales the peak frequencies via linear interpolating sample points numerically. The re-scaled UPLC/TOFMS peaks could then be amplified significantly. By introducing an external energy field upon the UPLC/TOFMS signals, the method of energy gain was developed to simultaneously amplify and determine weak peaks from multi-components. Subsequently, a multi-component stochastic resonance algorithm was constructed for the simultaneous quantitative determination of multiple weak UPLC/TOFMS peaks based on the two methods. The optimization of parameters was discussed in detail with simulated data sets, and the applicability of the algorithm was evaluated by quantitative analysis of three alkaloids in human plasma using UPLC/TOFMS. The new algorithm behaved well in the improvement of signal-to-noise (S/N) compared to several normally used peak enhancement methods, including the Savitzky-Golay filter, Whittaker-Eilers smoother and matched filtration. Copyright © 2011 John Wiley & Sons, Ltd.
A microwave cryogenic low-noise amplifier based on sige heterostructures
NASA Astrophysics Data System (ADS)
Ivanov, B. I.; Grajcar, M.; Novikov, I. L.; Vostretsov, A. G.; Il'ichev, E.
2016-04-01
A low-noise cryogenic amplifier for the measurement of weak microwave signals at sub-Kelvin temperatures is constructed. The amplifier has five stages based on SiGe bipolar heterostructure transistors and has a gain factor of 35 dB in the frequency band from 100 MHz to 4 GHz at an operating temperature of 800 mK. The parameters of a superconducting quantum bit measured with this amplifier in the ultralow-power mode are presented as an application example. The amplitude-frequency response of the "supercon-ducting qubit-coplanar cavity" structure is demonstrated. The ground state of the qubit is characterized in the quasi-dispersive measurement mode.
A low power on-chip class-E power amplifier for remotely powered implantable sensor systems
NASA Astrophysics Data System (ADS)
Ture, Kerim; Kilinc, Enver G.; Dehollain, Catherine
2015-06-01
This paper presents a low power fully integrated class-E power amplifier and its integration with remotely powered sensor system. The class-E power amplifier is suitable solution for low-power applications due to its high power efficiency. However, the required high inductance values which make the on-chip integration of the power amplifier difficult. The designed power amplifier is fully integrated in the remotely powered sensor system and fabricated in 0.18 μm CMOS process. The power is transferred to the implantable sensor system at 13.56 MHz by using an inductively coupled remote powering link. The induced AC voltage on the implant coil is converted into a DC voltage by a passive full-wave rectifier. A voltage regulator is used to suppress the ripples and create a clean and stable 1.8 V supply voltage for the sensor and communication blocks. The data collected from the sensors is transmitted by on-off keying modulated low-power transmitter at 1.2 GHz frequency. The transmitter is composed of a LC tank oscillator and a fully on-chip class-E power amplifier. An additional output network is used for the power amplifier which makes the integration of the power amplifier fully on-chip. The integrated power amplifier with 0.2 V supply voltage has a drain efficiency of 31.5% at -10 dBm output power for 50 Ω load. The measurement results verify the functionality of the power amplifier and the remotely powered implantable sensor system. The data communication is also verified by using a commercial 50 Ω chip antenna and has 600 kbps data rate at 1 m communication distance.
Research and Development of Laser Diode Based Instruments for Applications in Space
NASA Technical Reports Server (NTRS)
Krainak, Michael; Abshire, James; Cornwell, Donald; Dragic, Peter; Duerksen, Gary; Switzer, Gregg
1999-01-01
Laser diode technology continues to advance at a very rapid rate due to commercial applications such as telecommunications and data storage. The advantages of laser diodes include, wide diversity of wavelengths, high efficiency, small size and weight and high reliability. Semiconductor and fiber optical-amplifiers permit efficient, high power master oscillator power amplifier (MOPA) transmitter systems. Laser diode systems which incorporate monolithic or discrete (fiber optic) gratings permit single frequency operation. We describe experimental and theoretical results of laser diode based instruments currently under development at NASA Goddard Space Flight Center including miniature lidars for measuring clouds and aerosols, water vapor and wind for Earth and planetary (Mars Lander) use.
Efficient visible and UV generation by frequency conversion of a mode-filtered fiber amplifier
NASA Astrophysics Data System (ADS)
Kliner, Dahv A. V.; Di Teodoro, Fabio; Koplow, Jeffrey P.; Moore, Sean W.; Smith, Arlee V.
2003-07-01
We have generated the second, third, fourth, and fifth harmonics of the output of a Yb-doped fiber amplifier seeded by a passively Q-switched Nd:YAG microchip laser. The fiber amplifier employed multimode fiber (25 μm core diameter, V ~ 7.4) to provide high-peak-power pulses, but diffraction-limited beam quality was obtained by use of bend-loss-induced mode filtering. The amplifier output had a pulse duration of 0.97 ns and smooth, transform-limited temporal and spectral profiles (~500 MHz linewidth). We obtained high nonlinear conversion efficiencies using a simple optical arrangement and critically phase-matched crystals. Starting with 320 mW of average power at 1064 nm (86 ´J per pulse at a 3.7 kHz repetition rate), we generated 160 mW at 532 nm, 38 mW at 355 nm, 69 mW at 266 nm, and 18 mW at 213 nm. The experimental results are in excellent agreement with calculations. Significantly higher visible and UV powers will be possible by operating the fiber amplifier at higher repetition rates and pulse energies and by further optimizing the nonlinear conversion scheme.
NASA Astrophysics Data System (ADS)
Aketagawa, Masato; Kimura, Shohei; Yashiki, Takuya; Iwata, Hiroshi; Banh, Tuan Quoc; Hirata, Kenji
2011-02-01
In this paper, we discuss a method to measure the free spectral range (FSR) of a Fabry-Perot cavity (FP-cavity) using frequency modulation with one electric optical modulator (EOM) and the null method. A laser beam modulated by the EOM, to which a sine wave signal is supplied from a radio frequency (RF) oscillator, is incident on the FP-cavity. The transmitted or reflected light from the FP-cavity is observed and converted to an RF signal by a high-speed photodetector, and the RF signal is synchronously demodulated with a lock-in amplifier by referring to a cosine wave signal from the oscillator. We theoretically and experimentally demonstrate that the lock-in amplifier signal for the transmitted or reflected light becomes null with a steep slope when the modulation frequency is equal to the FSR under the condition that the carrier frequency of the laser is slightly detuned from the resonance of the FP-cavity. To reduce the measurement uncertainty for the FSR, we also discuss a selection method for laser power, a modulation index and the detuning shift of the carrier frequency, respectively.
Low noise charge ramp electrometer
Morgan, John P.; Piper, Thomas C.
1992-01-01
An electrometer capable of measuring small currents without the use of a feedback resistor which tends to contribute a large noise factor to the measured data. The electrometer eliminates the feedback resistor through the use of a feedback capacitor located across the electrometer amplifier. The signal from the electrometer amplifier is transferred to a electrometer buffer amplifier which serves to transfer the signal to several receptors. If the electrometer amplifier is approaching saturation, the buffer amplifier signals a reset discriminator which energizes a coil whose magnetic field closes a magnetic relay switch which in turn resets or zeros the feedback capacitor. In turn, a reset complete discriminator restarts the measurement process when the electrometer amplifier approaches its initial condition. The buffer amplifier also transmits the voltage signal from the electrometer amplifier to a voltage-to-frequency converter. The signals from the voltage-to-frequency converter are counted over a fixed period of time and the information is relayed to a data processor. The timing and sequencing of the small current measuring system is under the control of a sequence control logic unit.
Low noise charge ramp electrometer
Morgan, J.P.; Piper, T.C.
1992-10-06
An electrometer capable of measuring small currents without the use of a feedback resistor which tends to contribute a large noise factor to the measured data. The electrometer eliminates the feedback resistor through the use of a feedback capacitor located across the electrometer amplifier. The signal from the electrometer amplifier is transferred to a electrometer buffer amplifier which serves to transfer the signal to several receptors. If the electrometer amplifier is approaching saturation, the buffer amplifier signals a reset discriminator which energizes a coil whose magnetic field closes a magnetic relay switch which in turn resets or zeros the feedback capacitor. In turn, a reset complete discriminator restarts the measurement process when the electrometer amplifier approaches its initial condition. The buffer amplifier also transmits the voltage signal from the electrometer amplifier to a voltage-to-frequency converter. The signals from the voltage-to-frequency converter are counted over a fixed period of time and the information is relayed to a data processor. The timing and sequencing of the small current measuring system is under the control of a sequence control logic unit. 2 figs.
G-band harmonic multiplying gyrotron traveling-wave amplifier with a mode-selective circuit
DOE Office of Scientific and Technical Information (OSTI.GOV)
Yeh, Y. S.; Chen, Chang-Hong; Wang, Z. W.
Harmonic multiplying gyrotron traveling-wave amplifiers (gyro-TWAs) permit for magnetic field reduction and frequency multiplication. A high-order-mode harmonic multiplying gyro-TWA with large circuit dimensions and low ohmic loss can achieve a high average power. By amplifying a fundamental harmonic TE{sub 01} drive wave, the second harmonic component of the beam current initiates a TE{sub 02} wave to be amplified. Wall losses can suppress some competing modes because they act as an effective sink of the energy of the modes. However, such wall losses do not suppress all competing modes as the fields are contracted in the copper section in the gyro-TWA.more » An improved mode-selective circuit, using circular waveguides with the specified radii, can provide the rejection points within the frequency range to suppress the competing modes. The simulated results reveal that the mode-selective circuit can provide an attenuation of more than 10 dB to suppress the competing modes (TE{sub 21}, TE{sub 51}, TE{sub 22}, and TE{sub 03}). A G-band second harmonic multiplying gyro-TWA with the mode-selective circuit is predicted to yield a peak output power of 50 kW at 198.8 GHz, corresponding to a saturated gain of 55 dB at an interaction efficiency of 10%. The full width at half maximum bandwidth is 5 GHz.« less
670-GHz Down- and Up-Converting HEMT-Based Mixers
NASA Technical Reports Server (NTRS)
Schlecht, Enrich T.; Chattopadhyay, Goutam; Lin, Robert H.; Sin, Seth; Deal, William; Rodriquez, Bryan; Bayuk, Brian; Leong, Kevin; Mei, Gerry
2012-01-01
A large category of scientific investigation takes advantage of the interactions of signals in the frequency range from 300 to 1,000 GHz and higher. This includes astronomy and atmospheric science, where spectral observations in this frequency range give information about molecular abundances, pressures, and temperatures of small-sized molecules such as water. Additionally, there is a minimum in the atmospheric absorption at around 670 GHz that makes this frequency useful for terrestrial imaging, radar, and possibly communications purposes. This is because 670 GHz is a good compromise for imaging and radar applications between spatial resolution (for a given antenna size) that favors higher frequencies, and atmospheric losses that favor lower frequencies. A similar trade-off applies to communications link budgets: higher frequencies allow smaller antennas, but incur a higher loss. All of these applications usually require converting the RF (radio frequency) signal at 670 GHz to a lower IF (intermediate frequency) for processing. Further, transmitting for communication and radar generally requires up-conversion from IF to the RF. The current state-of-the-art device for performing the frequency conversion is based on Schottky diode mixers for both up and down conversion in this frequency range for room-temperature operation. Devices that can operate at room temperature are generally required for terrestrial, military, and planetary applications that cannot tolerate the mass, bulk, and power consumption of cryogenic cooling. The technology has recently advanced to the point that amplifiers in the region up to nearly 1,000 GHz are feasible. Almost all of these have been based on indium phosphide pseudomorphic high-electron mobility transistors (pHEMTs), in the form of monolithic microwave integrated circuits (MMICs). Since the processing of HEMT amplifiers is quite differ en t from that of Schottky diodes, use of Schottky mixers requires separate MMICs for the mixers and amplifiers. Fabrication of all the down-/up-conversion circuitry on single MMICs, using a ll-HEMT circuits, would constitute a major advance in circuit simplicity.
Direct carrier-envelope phase control of an amplified laser system.
Balčiūnas, Tadas; Flöry, Tobias; Baltuška, Andrius; Stanislauskas, Tomas; Antipenkov, Roman; Varanavičius, Arūnas; Steinmeyer, Günter
2014-03-15
Direct carrier-envelope phase stabilization of an Yb:KGW MOPA laser system is demonstrated with a residual phase jitter reduced to below 100 mrad, which compares favorably with previous stabilization reports, both of amplified laser systems as well as of ytterbium-based oscillators. This novel stabilization scheme relies on a frequency synthesis scheme and a feed-forward approach. The direct stabilization of a sub-MHz frequency comb from a CPA amplifier not only reduces the phase noise but also greatly simplifies the stabilization setup.
1645-nm single-frequency, injection-seeded Q-switched Er:YAG master oscillator and power amplifier
NASA Astrophysics Data System (ADS)
Wang, Shuo; Gao, Chunqing; Shi, Yang; Song, Rui; Na, Quanxin; Gao, Mingwei; Wang, Qing
2018-02-01
A 1645-nm injection-seeded Q-switched Er:YAG master oscillator and power amplifier system is reported. The master oscillator generates single-frequency pulse energy of 11.10 mJ with a pulse width of 188.8 ns at 200 Hz. An Er:YAG monolithic nonplanar ring oscillator is employed as a seed laser. The output pulse from the master oscillator is amplified to 14.33-mJ pulse energy through an Er:YAG amplifier, with a pulse width of 183.3 ns. The M2-factors behind the amplifier are 1.14 and 1.23 in x- and y-directions, respectively. The full width at half maximum of the fast Fourier transformation spectrum of the heterodyne beating signal is 2.84 MHz.
McBain, Ryan; Norton, Daniel; Chen, Yue
2010-09-01
While schizophrenia patients are impaired at facial emotion perception, the role of basic visual processing in this deficit remains relatively unclear. We examined emotion perception when spatial frequency content of facial images was manipulated via high-pass and low-pass filtering. Unlike controls (n=29), patients (n=30) perceived images with low spatial frequencies as more fearful than those without this information, across emotional salience levels. Patients also perceived images with high spatial frequencies as happier. In controls, this effect was found only at low emotional salience. These results indicate that basic visual processing has an amplified modulatory effect on emotion perception in schizophrenia. (c) 2010 Elsevier B.V. All rights reserved.
Towards Terahertz MMIC Amplifiers: Present Status and Trends
NASA Technical Reports Server (NTRS)
Samoska, Lorene
2006-01-01
This viewgraph presentation surveys the fastest Monolithic Millimeter-wave Integrated Circuit (MMIC) amplifiers to date; summarize previous solid state power amp results to date; reviews examples of MMICs, reviews Power vs. Gate periphery and frequency; Summarizes previous LNA results to date; reviews Noise figure results and trends toward higher frequency
Design and analysis of the cryoharness for Planck LFI
NASA Astrophysics Data System (ADS)
Leutenegger, Paolo H.; Bersanelli, Marco; Ferretti, Roberto; Prina, Mauro
2003-10-01
Planck is the third Medium-Sized Mission (M3) of ESA Horizon 2000 Scientific Programme. It is designed to image the anisotropies of the Cosmic Background Radiation Field over the whole sky, with unprecedented sensitivity and angular resolution. Planck carries two main experiments named HFI (High Frequency Instrument) and LFI (Low Frequency Instrument). The first is based on bolometers, the latter is an array of tuned radio receivers, based on High Electron Mobility Transistors (HEMTs) amplifier technology, and covering the frequency range from 30 to 70 GHz. The Front-End Electronics Modules (FEM"s) are cooled at 20K by a H2 sorption cooler. The high frequency signals (up to 70 GHz) are amplified, phase lagged and transported by means of waveguides to the warm back-end electronics at temperatures of the order of 300K. The 20 K cooling is achieved exploiting a two-stage cooling concept. The satellite is passively cooled to temperatures of the order of 60K using special designed radiators called V-grooves. An H2 sorption cooler constitutes the second active cooling stage, which allows focal plane temperatures of 20K, i.e. compatible with the tight noise requirements of the Low Noise Amplifiers (LNA"s). Each FEM needs 22 bias lines characterised by a high immunity to external noise and disturbances. The power required for each FEM ranges from 16 to 34mW, depending on the radiometer frequency. Due to the limited cooling power of the sorption cooler (about 2W), the heat transport through the harness and therefore the parasitics on the focal plane, shall be minimised. A total of 290 wires have to be routed from the warm electronics (300K) to the cold focal plane (20K), along a path of about 2200mm, transporting currents ranging from a few uA up to 240mA. The present paper analyses the thermal and electrical problems connected with the design of a suitable cryo-harness for the bias of the radiometers cryogenic front-end modules of LFI. Two possible approaches are proposed, and a solution presented.
Basic Technical Data on Transmission Systems and Equipment Using Communications Lines. Part 1.
1978-08-01
without noticeable degradation of the speech quality. - 219 - The maximum number of repeater sections: For the KNK-6s For the KNK-6t for multiquad...power circuit 1]; 15. Low frequency amplifier for direction B - Aj 16. Low frequency amplifier; 17. KNN [initial slope network]; 18. LVN-2...frequency Voice frequency ringing at 3,800 Hz with a level 0.4 - 0.8 Np lower than the speech channel level. The system for service
NASA Technical Reports Server (NTRS)
Bilbro, James W.; Johnson, Steven C.; Rothermel, Jeffry
1987-01-01
A coherent CO2 lidar operating in a master oscillator power amplifier configuration (MOPA) is described for both ground-based and airborne operation. Representative data taken from measurements against stationary targets in both the ground-based and airborne configurations are shown for the evaluation of the frequency stability of the system. Examples of data are also given which show the results of anomalous system operation. Overall results demonstrate that velocity measurements can be performed consistently to an accuracy of + or - 0.5 m/s and in some cases + or - 0.1 m/s.
Radio frequency communication system utilizing radiating transmission lines
Struven, Warren C.
1984-01-01
A radio communication system for use in tunnels, mines, buildings or other shielded locations in which a pair of radiating transmission lines (30), (31) extend through such location in spaced coextensive relation to each other. Each transmission line (30), (31) has at least one unidirectional amplifier (32), (33) interposed therein with the sense of the unidirectional amplifier (32) of one transmission line (30) being opposite to the sense of the unidirectional amplifier (33) of the other transmission line (31). Each of the amplifiers (32), (33) has a gain which is less than the coupling loss between the transmission lines (30), (31). Two or more mobile transceivers (35) in the location served by the system are coupled to the transmission lines (30), (31) by electromagnetic wave propagation in space in order to communicate directly with each other at a given radio frequency within the frequency range of the system.
Submillimeter-Wave Amplifier Module with Integrated Waveguide Transitions
NASA Technical Reports Server (NTRS)
Samoska, Lorene; Chattopadhyay, Goutam; Pukala, David; Gaier, Todd; Soria, Mary; ManFung, King; Deal, William; Mei, Gerry; Radisic, Vesna; Lai, Richard
2009-01-01
To increase the usefulness of monolithic millimeter-wave integrated circuit (MMIC) components at submillimeter-wave frequencies, a chip has been designed that incorporates two integrated, radial E-plane probes with an MMIC amplifier in between, thus creating a fully integrated waveguide module. The integrated amplifier chip has been fabricated in 35-nm gate length InP high-electron-mobility-transistor (HEMT) technology. The radial probes were mated to grounded coplanar waveguide input and output lines in the internal amplifier. The total length of the internal HEMT amplifier is 550 m, while the total integrated chip length is 1,085 m. The chip thickness is 50 m with the chip width being 320 m. The internal MMIC amplifier is biased through wire-bond connections to the gates and drains of the chip. The chip has 3 stages, employing 35-nm gate length transistors in each stage. Wire bonds from the DC drain and gate pads are connected to off-chip shunt 51-pF capacitors, and additional off-chip capacitors and resistors are added to the gate and drain bias lines for low-frequency stability of the amplifier. Additionally, bond wires to the grounded coplanar waveguide pads at the RF input and output of the internal amplifier are added to ensure good ground connections to the waveguide package. The S-parameters of the module, not corrected for input or output waveguide loss, are measured at the waveguide flange edges. The amplifier module has over 10 dB of gain from 290 to 330 GHz, with a peak gain of over 14 dB at 307 GHz. The WR2.2 waveguide cutoff is again observed at 268 GHz. The module is biased at a drain current of 27 mA, a drain voltage of 1.24 V, and a gate voltage of +0.21 V. Return loss of the module is very good between 5 to 25 dB. This result illustrates the usefulness of the integrated radial probe transition, and the wide (over 10-percent) bandwidth that one can expect for amplifier modules with integrated radial probes in the submillimeter-regime (>300 GHz).
Silicon-Chip-Based Optical Frequency Combs
2015-10-26
waveform generation, frequency metrology, and astronomical spectrograph calibration [2,3,4]. Traditionally, modelocked solid-state and fiber lasers have...different external-cavity diode lasers covering a total tuning range between 1450 nm and 1640 nm. Lensed fibers are used to couple into and out of the...cavity resonance of a Si3N4 microring resonator with a single-frequency tunable diode laser amplified by a ytterbium-doped fiber amplifier. We use a
DOE Office of Scientific and Technical Information (OSTI.GOV)
Lockerbie, N. A.; Tokmakov, K. V.
2014-11-15
This paper describes the design and performance of an extremely low-noise differential transimpedance amplifier, which takes its two inputs from separate photodiodes. The amplifier was planned to serve as the front-end electronics for a highly sensitive shadow-displacement sensing system, aimed at detecting very low-level “Violin-Mode” (VM) oscillations in 0.4 mm diameter by 600 mm long fused-silica suspension fibres. Four such highly tensioned fibres support the 40 kg test-masses/mirrors of the Advanced Laser Interferometer Gravitational wave Observatory interferometers. This novel design of amplifier incorporates features which prevent “noise-gain peaking” arising from large area photodiode (and cable) capacitances, and which also usefullymore » separate the DC and AC photocurrents coming from the photodiodes. In consequence, the differential amplifier was able to generate straightforwardly two DC outputs, one per photodiode, as well as a single high-gain output for monitoring the VM oscillations—this output being derived from the difference of the photodiodes’ two, naturally anti-phase, AC photocurrents. Following a displacement calibration, the amplifier's final VM signal output was found to have an AC displacement responsivity at 500 Hz of (9.43 ± 1.20) MV(rms) m{sup −1}(rms), and, therefore, a shot-noise limited sensitivity to such AC shadow- (i.e., fibre-) displacements of (69 ± 13) picometres/√Hz at this frequency, over a measuring span of ±0.1 mm.« less
Lockerbie, N A; Tokmakov, K V
2014-11-01
This paper describes the design and performance of an extremely low-noise differential transimpedance amplifier, which takes its two inputs from separate photodiodes. The amplifier was planned to serve as the front-end electronics for a highly sensitive shadow-displacement sensing system, aimed at detecting very low-level "Violin-Mode" (VM) oscillations in 0.4 mm diameter by 600 mm long fused-silica suspension fibres. Four such highly tensioned fibres support the 40 kg test-masses/mirrors of the Advanced Laser Interferometer Gravitational wave Observatory interferometers. This novel design of amplifier incorporates features which prevent "noise-gain peaking" arising from large area photodiode (and cable) capacitances, and which also usefully separate the DC and AC photocurrents coming from the photodiodes. In consequence, the differential amplifier was able to generate straightforwardly two DC outputs, one per photodiode, as well as a single high-gain output for monitoring the VM oscillations-this output being derived from the difference of the photodiodes' two, naturally anti-phase, AC photocurrents. Following a displacement calibration, the amplifier's final VM signal output was found to have an AC displacement responsivity at 500 Hz of (9.43 ± 1.20) MV(rms) m(-1)(rms), and, therefore, a shot-noise limited sensitivity to such AC shadow- (i.e., fibre-) displacements of (69 ± 13) picometres/√Hz at this frequency, over a measuring span of ±0.1 mm.
NASA Astrophysics Data System (ADS)
Lockerbie, N. A.; Tokmakov, K. V.
2014-11-01
This paper describes the design and performance of an extremely low-noise differential transimpedance amplifier, which takes its two inputs from separate photodiodes. The amplifier was planned to serve as the front-end electronics for a highly sensitive shadow-displacement sensing system, aimed at detecting very low-level "Violin-Mode" (VM) oscillations in 0.4 mm diameter by 600 mm long fused-silica suspension fibres. Four such highly tensioned fibres support the 40 kg test-masses/mirrors of the Advanced Laser Interferometer Gravitational wave Observatory interferometers. This novel design of amplifier incorporates features which prevent "noise-gain peaking" arising from large area photodiode (and cable) capacitances, and which also usefully separate the DC and AC photocurrents coming from the photodiodes. In consequence, the differential amplifier was able to generate straightforwardly two DC outputs, one per photodiode, as well as a single high-gain output for monitoring the VM oscillations—this output being derived from the difference of the photodiodes' two, naturally anti-phase, AC photocurrents. Following a displacement calibration, the amplifier's final VM signal output was found to have an AC displacement responsivity at 500 Hz of (9.43 ± 1.20) MV(rms) m-1(rms), and, therefore, a shot-noise limited sensitivity to such AC shadow- (i.e., fibre-) displacements of (69 ± 13) picometres/√Hz at this frequency, over a measuring span of ±0.1 mm.
NASA Astrophysics Data System (ADS)
Klehr, A.; Wenzel, H.; Fricke, J.; Bugge, F.; Liero, A.; Hoffmann, Th.; Erbert, G.; Tränkle, G.
2015-03-01
Semiconductor based sources which emit high-power spectrally stable nearly diffraction-limited optical pulses in the nanosecond range are ideally suited for a lot of applications, such as free-space communications, metrology, material processing, seed lasers for fiber or solid state lasers, spectroscopy, LIDAR and frequency doubling. Detailed experimental investigations of 975 nm and 800 nm diode lasers based on master oscillator power amplifier (MOPA) light sources are presented. The MOPA systems consist of distributed Bragg reflector lasers (DBR) as master oscillators driven by a constant current and ridge waveguide power amplifiers which can be driven DC and by current pulses. In pulse regime the amplifiers modulated with rectangular current pulses of about 5 ns width and a repetition frequency of 200 kHz act as optical gates, converting the continuous wave (CW) input beam emitted by the DBR lasers into a train of short optical pulses which are amplified. With these experimental MOPA arrangements no relaxation oscillations in the pulse power occur. With a seed power of about 5 mW at a wavelength of 973 nm output powers behind the amplifier of about 1 W under DC injection and 4 W under pulsed operation, corresponding to amplification factors of 200 (amplifier gain 23 dB) and 800 (gain 29 dB) respectively, are reached. At 800 nm a CW power of 1 W is obtained for a seed power of 40 mW. The optical spectra of the emission of the amplifiers exhibit a single peak at a constant wavelength with a line width < 10 pm in the whole investigated current ranges. The ratios between laser and ASE levels were > 50 dB. The output beams are nearly diffraction limited with beam propagation ratios M2lat ~ 1.1 and M2ver ~ 1.2 up to 4 W pulse power.
NASA Technical Reports Server (NTRS)
Medelius, Pedro J. (Inventor); Simpson, Howard J. (Inventor)
1999-01-01
A cable tester is described for low frequency testing of a cable for faults. The tester allows for testing a cable beyond a point where a signal conditioner is installed, minimizing the number of connections which have to be disconnected. A magnetic pickup coil is described for detecting a test signal injected into the cable. A narrow bandpass filter is described for increasing detection of the test signal. The bandpass filter reduces noise so that a high gain amplifier provided for detecting a test signal is not completely saturate by noise. To further increase the accuracy of the cable tester, processing gain is achieved by comparing the signal from the amplifier with at least one reference signal emulating the low frequency input signal injected into the cable. Different processing techniques are described evaluating a detected signal.
Communications Transceivers for Venus Surface Missions
NASA Technical Reports Server (NTRS)
Force, Dale A.
2004-01-01
The high temperature of the surface of Venus poses many difficulties. Previous Venus landers have only operated for short durations before succumbing to the heat. NASA Glenn Research Center conducted a study on communications for long duration Venus surface missions. I report the findings in this presentation. Current technology allows production of communications transceivers that can operate on the surface of Venus, at temperatures above 450 C and pressures of over 90 atmospheres. While these transceivers would have to be relatively simple, without much of the advanced signal processing often used in modern transceivers, since current and near future integrated circuits cannot operate at such high temperatures, the transceivers will be able to meet the requirements of proposed Venus Surface mission. The communication bands of interest are High Frequency or Very High Frequency (HFNHF) for communication between Venus surface and airborne probes (including surface to surface and air to air), and Ultra High Frequency (UHF) to Microwave bands for communication to orbiters. For HFNHF, transceivers could use existing vacuum tube technology. The packaging of the vacuum tubes may need modification, but the internal operating structure already operates at high temperatures. Using metal vacuum structures instead of glass, allows operation at high pressure. Wide bandgap transistors and diodes may be able to replace some of the thermionic components. VHF communications would be useful for line-of- sight operations, while HF would be useful for short-wave type communications using the Venusian ionosphere. UHF and microwave communications use magnetically focused thermionic devices, such as traveling wave tubes (TWTs), magnetron (M-type) amplifiers, and klystrons for high power amplifiers, and backward wave oscillators (BWOs) and reflex klystrons for oscillators. Permanent magnets are already in use in industry that can operate at 500 C. These magnets could focus electron beam tubes on the surface of Venus. While microwave windows will need to be designed for the high pressure, diamond windows have already been demonstrated, so high-pressure microwave windows can be designed and built. Thus, all of these devices could be useful for Venus surface missions. Current electronic power conditioners to supply the high voltages used in these microwave devices cannot operate at high temperatures, but earlier electronic power conditioners that used vacuum tubes can be modified to work at high temperature. Evaluating the various devices in this study, the M-type traveling wave tube (where a traveling wave structure is used in a crossed-field device, similar to the Amplitron used on the Apollo missions) stood out for the high power amplifier since it requires a single high voltage, simplifying the power supply design. Since the receiver amplifier is a low power amplifier, the loss of efficiency in linear beam devices without a depressed collector (and thus needing a single high voltage) is not important; a low noise TWT is a possible solution. Before solid-state microwave amplifiers were available, such TWTs were built with a 1-2 dB noise figure. A microwave triode or transistor made from a wide bandgap material may be preferable, if available. Much of the development work needed for Venusian communication devices will need to focus on the packaging of the devices, and their connections, but the technology is available to build transceivers that can operate on the surface of Venus indefinitely.
Amplifier Module for 260-GHz Band Using Quartz Waveguide Transitions
NASA Technical Reports Server (NTRS)
Padmanabhan, Sharmila; Fung, King Man; Kangaslahti, Pekka P.; Peralta, Alejandro; Soria, Mary M.; Pukala, David M.; Sin, Seth; Samoska, Lorene A.; Sarkozy, Stephen; Lai, Richard
2012-01-01
Packaging of MMIC LNA (monolithic microwave integrated circuit low-noise amplifier) chips at frequencies over 200 GHz has always been problematic due to the high loss in the transition between the MMIC chip and the waveguide medium in which the chip will typically be used. In addition, above 200 GHz, wire-bond inductance between the LNA and the waveguide can severely limit the RF matching and bandwidth of the final waveguide amplifier module. This work resulted in the development of a low-loss quartz waveguide transition that includes a capacitive transmission line between the MMIC and the waveguide probe element. This capacitive transmission line tunes out the wirebond inductance (where the wire-bond is required to bond between the MMIC and the probe element). This inductance can severely limit the RF matching and bandwidth of the final waveguide amplifier module. The amplifier module consists of a quartz E-plane waveguide probe transition, a short capacitive tuning element, a short wire-bond to the MMIC, and the MMIC LNA. The output structure is similar, with a short wire-bond at the output of the MMIC, a quartz E-plane waveguide probe transition, and the output waveguide. The quartz probe element is made of 3-mil quartz, which is the thinnest commercially available material. The waveguide band used is WR4, from 170 to 260 GHz. This new transition and block design is an improvement over prior art because it provides for better RF matching, and will likely yield lower loss and better noise figure. The development of high-performance, low-noise amplifiers in the 180-to- 700-GHz range has applications for future earth science and planetary instruments with low power and volume, and astrophysics array instruments for molecular spectroscopy. This frequency band, while suitable for homeland security and commercial applications (such as millimeter-wave imaging, hidden weapons detection, crowd scanning, airport security, and communications), also has applications to future NASA missions. The Global Atmospheric Composition Mission (GACM) in the NRC Decadel Survey will need low-noise amplifiers with extremely low noise temperatures, either at room temperature or for cryogenic applications, for atmospheric remote sensing.
Jessen, P.L.; Price, H.J.
1958-03-18
This patent relates to sine-wave generators and in particular describes a generator with a novel feedback circuit resulting in improved frequency stability. The generator comprises two triodes having a common cathode circuit connected to oscillate at a frequency and amplitude at which the loop galn of the circutt ls unity, and another pair of triodes having a common cathode circuit arranged as a conventional amplifier. A signal is conducted from the osciliator through a frequency selective network to the amplifier and fed back to the osciliator. The unique feature of the feedback circuit is the amplifier operates in the nonlinear portion of its tube characteristics thereby providing a relatively constant feedback voltage to the oscillator irrespective of the amplitude of its input signal.
A Charge-Based Low-Power High-SNR Capacitive Sensing Interface Circuit
Peng, Sheng-Yu; Qureshi, Muhammad S.; Hasler, Paul E.; Basu, Arindam; Degertekin, F. L.
2008-01-01
This paper describes a low-power approach to capacitive sensing that achieves a high signal-to-noise ratio. The circuit is composed of a capacitive feedback charge amplifier and a charge adaptation circuit. Without the adaptation circuit, the charge amplifier only consumes 1 μW to achieve the audio band SNR of 69.34dB. An adaptation scheme using Fowler-Nordheim tunneling and channel hot electron injection mechanisms to stabilize the DC output voltage is demonstrated. This scheme provides a very low frequency pole at 0.2Hz. The measured noise spectrums show that this slow-time scale adaptation does not degrade the circuit performance. The DC path can also be provided by a large feedback resistance without causing extra power consumption. A charge amplifier with a MOS-bipolar pseudo-resistor feedback scheme is interfaced with a capacitive micromachined ultrasonic transducer to demonstrate the feasibility of this approach for ultrasound applications. PMID:18787650
NASA Astrophysics Data System (ADS)
Hayati, Mohsen; Roshani, Sobhan; Zirak, Ali Reza
2017-05-01
In this paper, a class E power amplifier (PA) with operating frequency of 1 MHz is presented. MOSFET non-linear drain-to-source parasitic capacitance, linear external capacitance at drain-to-source port and linear shunt capacitance in the output structure are considered in design theory. One degree of freedom is added to the design of class E PA, by assuming the shunt capacitance in the output structure in the analysis. With this added design degree of freedom it is possible to achieve desired values for several parameters, such as output voltage, load resistance and operating frequency, while both zero voltage and zero derivative switching (ZVS and ZDS) conditions are satisfied. In the conventional class E PA, high value of peak switch voltage results in limitations for the design of amplifier, while in the presented structure desired specifications could be achieved with the safe margin of peak switch voltage. The results show that higher operating frequency and output voltage can also be achieved, compared to the conventional structure. PSpice software is used in order to simulate the designed circuit. The presented class E PA is designed, fabricated and measured. The measured results are in good agreement with simulation and theory results.
Varshney, Shailendra; Fujisawa, Takeshi; Saitoh, Kunimasa; Koshiba, Masanori
2005-11-14
In this paper, we report, for the first time, an inherently gain-flattened discrete highly nonlinear photonic crystal fiber (HNPCF) Raman amplifier (HNPCF-RA) design which shows 13.7 dB of net gain (with +/-0.85-dB gain ripple) over 28-nm bandwidth. The wavelength dependent leakage loss property of HNPCF is used to flatten the Raman gain of the amplifier module. The PCF structural design is based on W-shaped refractive index profile where the fiber parameters are well optimized by homely developed genetic algorithm optimization tool integrated with an efficient vectorial finite element method (V-FEM). The proposed fiber design has a high Raman gain efficiency of 4.88 W(-1) . km(-1) at a frequency shift of 13.1 THz, which is precisely evaluated through V-FEM. Additionally, the designed module, which shows ultra-wide single mode operation, has a slowly varying negative dispersion coefficient (-107.5 ps/nm/km at 1550 nm) over the operating range of wavelengths. Therefore, our proposed HNPCF-RA module acts as a composite amplifier with dispersion compensator functionality in a single component using a single pump.
Wideband Reconfigurable Harmonically Tuned GaN SSPA for Cognitive Radios
NASA Technical Reports Server (NTRS)
Waldstein, Seth W.; Barbosa Kortright, Miguel A.; Simons, Rainee N.
2017-01-01
The paper presents the architecture of a wideband reconfigurable harmonically-tuned Gallium Nitrate (GaN) Solid State Power Amplifier (SSPA) for cognitive radios. When interfaced with the physical layer of a cognitive communication system, this amplifier topology offers broadband high efficiency through the use of multiple tuned input/output matching networks. This feature enables the cognitive radio to reconfigure the operating frequency without sacrificing efficiency. This paper additionally presents as a proof-of-concept the design, fabrication, and test results for a GaN inverse class-F type amplifier operating at X-band (8.4 GHz) that achieves a maximum output power of 5.14-W, Power Added Efficiency (PAE) of 38.6, and Drain Efficiency (DE) of 48.9 under continuous wave (CW) operation.
Mechanics of the Mammalian Cochlea
Robles, Luis; Ruggero, Mario A.
2013-01-01
In mammals, environmental sounds stimulate the auditory receptor, the cochlea, via vibrations of the stapes, the innermost of the middle ear ossicles. These vibrations produce displacement waves that travel on the elongated and spirally wound basilar membrane (BM). As they travel, waves grow in amplitude, reaching a maximum and then dying out. The location of maximum BM motion is a function of stimulus frequency, with high-frequency waves being localized to the “base” of the cochlea (near the stapes) and low-frequency waves approaching the “apex” of the cochlea. Thus each cochlear site has a characteristic frequency (CF), to which it responds maximally. BM vibrations produce motion of hair cell stereocilia, which gates stereociliar transduction channels leading to the generation of hair cell receptor potentials and the excitation of afferent auditory nerve fibers. At the base of the cochlea, BM motion exhibits a CF-specific and level-dependent compressive nonlinearity such that responses to low-level, near-CF stimuli are sensitive and sharply frequency-tuned and responses to intense stimuli are insensitive and poorly tuned. The high sensitivity and sharp-frequency tuning, as well as compression and other nonlinearities (two-tone suppression and intermodulation distortion), are highly labile, indicating the presence in normal cochleae of a positive feedback from the organ of Corti, the “cochlear amplifier.” This mechanism involves forces generated by the outer hair cells and controlled, directly or indirectly, by their transduction currents. At the apex of the cochlea, nonlinearities appear to be less prominent than at the base, perhaps implying that the cochlear amplifier plays a lesser role in determining apical mechanical responses to sound. Whether at the base or the apex, the properties of BM vibration adequately account for most frequency-specific properties of the responses to sound of auditory nerve fibers. PMID:11427697
NASA Technical Reports Server (NTRS)
Cleveland, G.
1977-01-01
Miniature amplifier for bioelectronic instrumentation consumes only about 100 mW and has frequency response flat to within 0.5 dB from 0.14 to 450 Hz. Device consists of five thin film substrates, which contain eight operational amplifiers and seven field-effect transistor dice.
Single-frequency gain-switched Ho-doped fiber laser
NASA Astrophysics Data System (ADS)
Geng, Jihong; Wang, Q.; Luo, T.; Case, B.; Jiang, S.; Amzajerdian, Farzin; Yu, Jirong
2012-10-01
We demonstrate a single-frequency gain-switched Ho-doped fiber laser based on heavily doped silicate glass fiber fabricated in house. A Q-switched Tm-doped fiber laser at 1.95μm was used to gain-switch the Ho-doped fiber laser via in-band pumping. Output power of the single-frequency gain-switched pulses has been amplified in a cladding-pumped Tm-Ho-codoped fiber amplifier with 1.2m active fiber pumped at 803nm. Two different nonlinear effects, i.e., modulation instability and stimulated Brillouin scattering, could be seen in the 10μm-core fiber amplifier when the peak power exceeds 3kW. The single-frequency gain-switched fiber laser was operated at 2.05μm, a popular laser wavelength for Doppler lidar application. This is the first demonstration of this kind of fiber laser.
Lemieux, Samuel; Manceau, Mathieu; Sharapova, Polina R; Tikhonova, Olga V; Boyd, Robert W; Leuchs, Gerd; Chekhova, Maria V
2016-10-28
Bright squeezed vacuum, a promising tool for quantum information, can be generated by high-gain parametric down-conversion. However, its frequency and angular spectra are typically quite broad, which is undesirable for applications requiring single-mode radiation. We tailor the frequency spectrum of high-gain parametric down-conversion using an SU(1,1) interferometer consisting of two nonlinear crystals with a dispersive medium separating them. The dispersive medium allows us to select a narrow band of the frequency spectrum to be exponentially amplified by high-gain parametric amplification. The frequency spectrum is thereby narrowed from (56.5±0.1) to (1.22±0.02) THz and, in doing so, the number of frequency modes is reduced from approximately 50 to 1.82±0.02. Moreover, this method provides control and flexibility over the spectrum of the generated light through the timing of the pump.
NASA Astrophysics Data System (ADS)
Madin, M. Sya'aer; Ahmad Hambali, N. A. M.; Shahimin, M. M.; Wahid, M. H. A.; Roshidah, N.; Azaidin, M. A. M.
2017-02-01
In this paper, double frequency spacing of multi-wavelength Brillouin Raman fiber laser utilizing eight-shaped structure in conjunction with Raman amplifier is simulated and demonstrated using Optisys software. Double frequency multiwavelength Brillouin Raman fiber laser is one of the solution for single frequency spacing channel de-multiplexing from narrow single spacing in the communication systems. The eight-shaped structure has the ability to produce lower noise and double frequency spacing. The 7 km of single mode fiber acting as a nonlinear medium for the generation of Stimulated Brillouin Scattering and Stimulated Raman Scattering. As a results, the optimum results are recorded at 1450 nm of RP power at 22 dBm and 1550 nm of BP power at 20 dBm. These parameters provide a high output peak power, gain and average OSNR. The highest peak power of Stokes 1 is recorded at 90% of coupling ratio which is 29.88 dBm. It is found that the maximum gain and average OSNR of about 1.23 dB and 63.74 dB.
Yun, Ruida; Sthalekar, Chirag; Joyner, Valencia M
2011-01-01
This paper presents the design and measurement results of two avalanche photodiode structures (APDs) and a novel frequency-mixing transimpedance amplifier (TIA), which are key building blocks towards a monolithically integrated optical sensor front end for near-infrared (NIR) spectroscopy applications. Two different APD structures are fabricated in an unmodified 0.18 \\im CMOS process, one with a shallow trench isolation (STI) guard ring and the other with a P-well guard ring. The APDs are characterized in linear mode. The STI bounded APD demonstrates better performance and exhibits 3.78 A/W responsivity at a wavelength of 690 nm and bias voltage of 10.55 V. The frequency-mixing TIA (FM-TIA) employs a T-feedback network incorporating gate-controlled transistors for resistance modulation, enabling the simultaneous down-conversion and amplification of the high frequency modulated photodiode (PD) current. The TIA achieves 92 dS Ω conversion gain with 0.5 V modulating voltage. The measured IIP(3) is 10.6/M. The amplifier together with the 50 Ω output buffer draws 23 mA from a1.8 V power supply.
Matsuzaka, Yoshiya; Ichihara, Toshiaki; Abe, Toshihiko; Mushiake, Hajime
2012-01-01
We describe a custom-designed bio-amplifier and its use in teaching neurophysiology to undergraduate students. The amplifier has the following features: 1) differential amplification with driven shield inputs, which makes it workable even in electrically unshielded environments, 2) high input impedance to allow recordings of small signals through high signal source impedance, 3) dual fixed frequency bandpass filters (1–340Hz for surface EMG, EEG, local field potential etc and 320Hz – 3.4kHz for neuronal action potential recording) and independent gain controllers (up to x107,000) to allow the recording of different signals from the same source (e.g., local field potential and spiking activity of neurons), and 4) printed circuit board technology for easy replication with consistent quality. We compared its performance with a commercial amplifier in an electrically noisy environment. Even without any electrostatic shield, it recorded clear electromyographic activity with little interference from other electric appliances. In contrast, the commercial amplifier’s performance severely deteriorated under the same condition. We used this amplifier to build a computer-controlled stimulation and measurement system for electroencephalographic recordings by undergraduate students. The students successfully recorded various sensory evoked potentials with clarity that otherwise would have required costly instruments. This amplifier is a low-cost yet reliable instrument for electro-physiological recording both in education and research. PMID:23504543
DOE Office of Scientific and Technical Information (OSTI.GOV)
Charbonneau-Lefort, Mathieu; Afeyan, Bedros; Fejer, M. M.
Optical parametric amplifiers using chirped quasi-phase-matching (QPM) gratings offer the possibility of engineering the gain and group delay spectra. We give practical formulas for the design of such amplifiers. We consider linearly chirped QPM gratings providing constant gain over a broad bandwidth, sinusoidally modulated profiles for selective frequency amplification and a pair of QPM gratings working in tandem to ensure constant gain and constant group delay at the same time across the spectrum. Finally, the analysis is carried out in the frequency domain using Wentzel–Kramers–Brillouin analysis.
Method and apparatus for linear low-frequency feedback in monolithic low-noise charge amplifiers
DeGeronimo, Gianluigi
2006-02-14
A charge amplifier includes an amplifier, feedback circuit, and cancellation circuit. The feedback circuit includes a capacitor, inverter, and current mirror. The capacitor is coupled across the signal amplifier, the inverter is coupled to the output of the signal amplifier, and the current mirror is coupled to the input of the signal amplifier. The cancellation circuit is coupled to the output of the signal amplifier. A method of charge amplification includes providing a signal amplifier; coupling a first capacitor across the signal amplifier; coupling an inverter to the output of the signal amplifier; coupling a current mirror to the input of the signal amplifier; and coupling a cancellation circuit to the output of the signal amplifier. A front-end system for use with radiation sensors includes a charge amplifier and a current amplifier, shaping amplifier, baseline stabilizer, discriminator, peak detector, timing detector, and logic circuit coupled to the charge amplifier.
Upgrading a high-throughput spectrometer for high-frequency (<400 kHz) measurements
NASA Astrophysics Data System (ADS)
Nishizawa, T.; Nornberg, M. D.; Den Hartog, D. J.; Craig, D.
2016-11-01
The upgraded spectrometer used for charge exchange recombination spectroscopy on the Madison Symmetric Torus resolves emission fluctuations up to 400 kHz. The transimpedance amplifier's cutoff frequency was increased based upon simulations comparing the change in the measured photon counts for time-dynamic signals. We modeled each signal-processing stage of the diagnostic and scanned the filtering frequency to quantify the uncertainty in the photon counting rate. This modeling showed that uncertainties can be calculated based on assuming each amplification stage is a Poisson process and by calibrating the photon counting rate with a DC light source to address additional variation.
Innovative microwave design leads to smart, small EW systems
NASA Astrophysics Data System (ADS)
Niehenke, Edward C.
1988-02-01
An account is given of the state-of-the-art in microwave component and system design for EW systems, whose size and weight has been progressively reduced in recent years as a result of continuing design innovation in microwave circuitry. Typically, AI-function computers are employed to control microwave functions in a way that allows rapid RAM or ROM software modification to meet new performance requirements, thereby obviating hardware modifications. Attention is given to high-isolation GaAs MMIC filters, switches and amplifiers, frequency converters, instantaneous frequency measurement systems, frequency translators, digital RF memories, and high effective radiated power solid-state active antenna arrays.
NASA Astrophysics Data System (ADS)
Tlalolini, David; Ritou, Mathieu; Rabréau, Clément; Le Loch, Sébastien; Furet, Benoit
2018-05-01
The paper presents an electromagnetic system that has been developed to measure the quasi-static and dynamic behavior of machine-tool spindle, at different spindle speeds. This system consists in four Pulse Width Modulation amplifiers and four electromagnets to produce magnetic forces of ± 190 N for the static mode and ± 80 N for the dynamic mode up to 5 kHz. In order to measure the Frequency Response Function (FRF) of spindle, the applied force is required, which is a key issue. A dynamic force model is proposed in order to obtain the load from the measured current in the amplifiers. The model depends on the exciting frequency and on the magnetic characteristics of the system. The predicted force at high speed is validated with a specific experiment and the performance limits of the experimental device are investigated. The FRF obtained with the electromagnetic system is compared to a classical tap test measurement.
NASA Technical Reports Server (NTRS)
Wintucky, E. G.; Wilson, J. D.; Vaden, K. R.; Force, D. A.; Freeman, J. C.; Lesny, G. G.; Kory, C. L.; Chevalier, C. T.; Ebihara, B.; Dayton, J. A.;
2001-01-01
Space communications architectures are being planned to meet the high rate data distribution requirements of future NASA Enterprise missions. These will require the use of traveling wave tube amplifiers (TWTAs) to provide the high frequency, RF (radio frequency) power and efficiency needed for many of the communications links. A program addressing these requirements is currently underway at NASA Glenn Research Center (GRC) for the development of a high efficiency, 20 watt, 32 GHz TWT of reduced size and weight that is based on a novel high gain n circuit design, termed the 'finned ladder'.
DOE Office of Scientific and Technical Information (OSTI.GOV)
J.G. Kulpin, K.J. Kleman, R.A. Legg
2012-07-01
A solid state analog television transmitter designed for 200 MHz operation is being commissioned as a radio frequency power amplifier on the Wisconsin superconducting electron gun cavity. The amplifier consists of three separate radio frequency power combiner cabinets and one monitor and control cabinet. The transmitter employs rugged field effect transistors built into one kilowatt drawers that are individually hot swappable at maximum continuous power output. The total combined power of the transmitter system is 33 kW at 200 MHz, output through a standard coaxial transmission line. A low level radio frequency system is employed to digitally synthesize the 200more » MHz signal and precisely control amplitude and phase.« less
Millimeter-Wave GaN MMIC Integration with Additive Manufacturing
NASA Astrophysics Data System (ADS)
Coffey, Michael
This thesis addresses the analysis, design, integration and test of microwave and millimeter-wave monolithic microwave integrated circuits (MMIC or MMICs). Recent and ongoing progress in semiconductor device fabrication and MMIC processing technology has pushed the upper limit in MMIC frequencies from millimeter-wave (30-300 GHz) to terahertz (300-3000 GHz). MMIC components operating at these frequencies will be used to improve the sensitivity and performance of radiometers, receivers for communication systems, passive remote sensing systems, transceivers for radar instruments and radio astronomy systems. However, a serious hurdle in the utilization of these MMIC components, and a main topic presented in this thesis, is the development and reliable fabrication of practical packaging techniques. The focus of this thesis is the investigation of first, the design and analysis of microwave and millimeter-wave GaN MMICs and second, the integration of those MMICs into usable waveguide components. The analysis, design and testing of various X-band (8-12 GHz) thru H-band (170-260 GHz) GaN MMIC power amplifier (PA or PAs), including a V-band (40-75 GHz) voltage controlled oscillator, is the majority of this work. Several PA designs utilizing high-efficiency techniques are analyzed, designed and tested. These examples include a 2nd harmonic injection amplifier, a Class-E amplifier fabricated with a GaN-on-SiC 300 GHz fT process, and an example of the applicability of supply-modulation with a Doherty power amplifier, all operating at 10 GHz. Two H-band GaN MMIC PAs are designed, one with integrated CPW-to-waveguide transitions for integration. The analysis of PA stability is especially important for wideband, high- fT devices and a new way of analyzing stability is explored and experimentally validated. Last, the challenges of integrating MMICs operating at millimeter-wave frequencies are discussed and assemblies using additive and traditional manufacturing are demonstrated.
Lin, Gong-Ru; Pan, Ci-Ling; Yu, Kun-Chieh
2007-10-01
By spectrally and temporally reshaping the gain-window of a traveling-wave semiconductor optical amplifier (TWSOA) with a backward injected multi- or single-wavelength inverse-optical-comb, we theoretically and experimentally investigate the dynamic frequency chirp of the all-optical 10GBit/s Return-to-Zero (RZ) data-stream format-converted from the TWSOA under strong cross-gain depletion scheme. The multi-wavelength inverse-optical-comb injection effectively depletes the TWSOA gain spectrally and temporally, remaining a narrow gain-window and a reduced spectral linewidth and provide a converted RZ data with a smaller peak-to-peak frequency chirp of 6.7 GHz. Even at high inverse-optical-comb injection power and highly biased current condition for improving the operational bit-rate, the chirp of the multi-wavelength-injection converted RZ pulse is still 2.1-GHz smaller than that obtained by using single-wavelength injection at a cost of slight pulse-width broadening by 1 ps.
Wei, Heming; Krishnaswamy, Sridhar
2017-05-01
Fiber Bragg grating (FBG) dynamic strain sensors using both an erbium-based fiber ring laser configuration and a reflective semiconductor optical amplifier (RSOA)-based linear laser configuration are investigated theoretically and experimentally. Fiber laser models are first presented to analyze the output characteristics of both fiber laser configurations when the FBG sensor is subjected to dynamic strains at high frequencies. Due to differences in the transition times of erbium and the semiconductor (InP/InGaAsP), erbium-doped fiber amplifier (EDFA)- and RSOA-based fiber lasers exhibit different responses and regimes of stability when the FBG is subjected to dynamic strains. The responses of both systems are experimentally verified using an adaptive photorefractive two-wave mixing (TWM) spectral demodulation technique. The experimental results show that the RSOA-FBG fiber linear cavity laser is stable and can stably respond to dynamic strains at high frequencies. An example application using a multiplexed TWM interferometer to demodulate multiple FBG sensors is also discussed.
Zhu, T; Rao, Y J; Wang, J L
2007-01-20
A novel dynamic gain equalizer for flattening Er-doped fiber amplifiers based on a twisted long-period fiber grating (LPFG) induced by high-frequency CO(2) laser pulses is reported for the first time to our knowledge. Experimental results show that its transverse-load sensitivity is up to 0.34 dB/(g.mm(-1)), while the twist ratio of the twisted LPFG is approximately 20 rad/m, which is 7 times higher than that of a torsion-free LPFG. In addition, it is found that the strong orientation dependence of the transverse-load sensitivity of the torsion-free LPFG reported previously has been weakened considerably. Therefore such a dynamic gain equalizer based on the unique transverse-load characteristics of the twisted LPFG provides a much larger adjustable range and makes packaging of the gain equalizer much easier. A demonstration has been carried out to flatten an Er-doped fiber amplifier to +/-0.5 dB over a 32 nm bandwidth.
Precision absolute-value amplifier for a precision voltmeter
Hearn, W.E.; Rondeau, D.J.
1982-10-19
Bipolar inputs are afforded by the plus inputs of first and second differential input amplifiers. A first gain determining resistor is connected between the minus inputs of the differential amplifiers. First and second diodes are connected between the respective minus inputs and the respective outputs of the differential amplifiers. First and second FETs have their gates connected to the outputs of the amplifiers, while their respective source and drain circuits are connected between the respective minus inputs and an output lead extending to a load resistor. The output current through the load resistor is proportional to the absolute value of the input voltage difference between the bipolar input terminals. A third differential amplifier has its plus input terminal connected to the load resistor. A second gain determining resistor is connected between the minus input of the third differential amplifier and a voltage source. A third FET has its gate connected to the output of the third amplifier. The source and drain circuit of the third transistor is connected between the minus input of the third amplifier and a voltage-frequency converter, constituting an output device. A polarity detector is also provided, comprising a pair of transistors having their inputs connected to the outputs of the first and second differential amplifiers. The outputs of the polarity detector are connected to gates which switch the output of the voltage-frequency converter between up and down counting outputs.
Precision absolute value amplifier for a precision voltmeter
Hearn, William E.; Rondeau, Donald J.
1985-01-01
Bipolar inputs are afforded by the plus inputs of first and second differential input amplifiers. A first gain determining resister is connected between the minus inputs of the differential amplifiers. First and second diodes are connected between the respective minus inputs and the respective outputs of the differential amplifiers. First and second FETs have their gates connected to the outputs of the amplifiers, while their respective source and drain circuits are connected between the respective minus inputs and an output lead extending to a load resister. The output current through the load resister is proportional to the absolute value of the input voltage difference between the bipolar input terminals. A third differential amplifier has its plus input terminal connected to the load resister. A second gain determining resister is connected between the minus input of the third differential amplifier and a voltage source. A third FET has its gate connected to the output of the third amplifier. The source and drain circuit of the third transistor is connected between the minus input of the third amplifier and a voltage-frequency converter, constituting an output device. A polarity detector is also provided, comprising a pair of transistors having their inputs connected to the outputs of the first and second differential amplifiers. The outputs of the polarity detector are connected to gates which switch the output of the voltage-frequency converter between up and down counting outputs.
Log amplifier with pole-zero compensation
Brookshier, William
1987-01-01
A logarithmic amplifier circuit provides pole-zero compensation for improved stability and response time over 6-8 decades of input signal frequency. The amplifier circuit includes a first operational amplifier with a first feedback loop which includes a second, inverting operational amplifier in a second feedback loop. The compensated output signal is provided by the second operational amplifier with the log elements, i.e., resistors, and the compensating capacitors in each of the feedback loops having equal values so that each break point or pole is offset by a compensating break point or zero.
A 90 GHz Amplifier Assembled Using a Bump-Bonded InP-Based HEMT
NASA Technical Reports Server (NTRS)
Pinsukanjana, Paul R.; Samoska, Lorene A.; Gaier, Todd C.; Smith, R. Peter; Ksendzov, Alexander; Fitzsimmons, Michael J.; Martin, Suzanne C.
1998-01-01
We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds. We bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) onto a separately fabricated passive circuit having a GaAs substrate. The compact bumps and small chip size were used for efficient coupling and maximum circuit design flexibility. This new quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) amplifier exhibits a peak gain of 5.8 dB at approx. 90 GHz and a 3 dB bandwidth of greater than 25%. To our knowledge, this is the highest frequency amplifier assembled using bump-bonded technology. Our bump-bonding technique is a useful alternative to the high cost of monolithic millimeter-wave integrated circuits (MMIC's). Effects of the bumps on the circuit appear to be minimal. We used the simple matching circuit for demonstrating the technology - future circuits would have all of the elements (resistors, via holes, bias lines, etc.) included 'in conventional MMIC's. Our design in different from other investigators' efforts in that the bumps are only 8 microns thick by 15 microns wide. The bump sizes were sufficiently small that the devices, originally designed for W-band hybrid circuits, could be bonded without alteration. Figure 3 shows the measured and simulated magnitude of S-parameters from 85-120 GHz, of the InP HEMT bump-bonded to the low noise amplifier (LNA) passive. The maximum gain is 5.8 dB at approx. 90 GHz, and gain extends to 117 GHz. Measurement of a single device (without matching networks) shows approx. 1 dB of gain at 90 GHz. The measured gain of the amplifier agrees well with the design in the center of the measurement band, and the agreement falls off at the band edges. Since no accommodation for the bump-bonding parasitics was made in the design, the result implies that the parasitic elements associated with the bonding itself do not dominate the performance of the LNA circuit. It should be noted that this amplifier was designed for good noise performance, which is why the input and output return losses are poorer than one would expect for an amplifier simply matched for gain. However, noise performance has not been measured at this time. While the agreement between modeled vs. experimental data is not exact, the data prove that bump-bonded technology can be used for amplifiers at frequencies at least as high as 100 GHz. JPL is pursuing this technology as a way to economically and quickly incorporate the best available HEMTs into a circuit with all of the reliability and circuit design flexibility offered by MMIC technology. We are currently using the technology to fabricate 4-stage, wide-band, W-band LNA's. We have also performed pull and shear tests which show that the bump bonds are sufficiently robust for any anticipated application.
Klehr, A; Wenzel, H; Fricke, J; Bugge, F; Erbert, G
2014-10-06
We have developed a diode-laser based master oscillator power amplifier (MOPA) light source which emits high-power spectrally stabilized and nearly-diffraction limited optical pulses in the nanoseconds range as required by many applications. The MOPA consists of a distributed Bragg reflector (DBR) laser as master oscillator driven by a constant current and a ridge waveguide power amplifier (PA) which can be driven by a constant current (DC) or by rectangular current pulses with a width of 5 ns at a repetition frequency of 200 kHz. Under pulsed operation the amplifier acts as an optical gate, converting the CW input beam emitted by the DBR laser into a train of short amplified optical pulses. With this experimental MOPA arrangement no relaxation oscillations occur. A continuous wave power of 1 W under DC injection and a pulse power of 4 W under pulsed operation are reached. For both operational modes the optical spectrum of the emission of the amplifier exhibits a peak at a constant wavelength of 973.5 nm with a spectral width < 10 pm.
Precision Isotope Shift Measurements in Calcium Ions Using Quantum Logic Detection Schemes.
Gebert, Florian; Wan, Yong; Wolf, Fabian; Angstmann, Christopher N; Berengut, Julian C; Schmidt, Piet O
2015-07-31
We demonstrate an efficient high-precision optical spectroscopy technique for single trapped ions with nonclosed transitions. In a double-shelving technique, the absorption of a single photon is first amplified to several phonons of a normal motional mode shared with a cotrapped cooling ion of a different species, before being further amplified to thousands of fluorescence photons emitted by the cooling ion using the standard electron shelving technique. We employ this extension of the photon recoil spectroscopy technique to perform the first high precision absolute frequency measurement of the 2D(3/2)→2P(1/2) transition in calcium, resulting in a transition frequency of f=346 000 234 867(96) kHz. Furthermore, we determine the isotope shift of this transition and the 2S(1/2)→2P(1/2) transition for 42Ca+, 44Ca+, and 48Ca+ ions relative to 40Ca+ with an accuracy below 100 kHz. Improved field and mass shift constants of these transitions as well as changes in mean square nuclear charge radii are extracted from this high resolution data.
NASA Astrophysics Data System (ADS)
Zheng, Hao; Zhu, Zhangming; Ma, Rui
2017-07-01
This paper presents a fully integrated CMOS filterless class D amplifier that can directly hook up lithium battery in mobile application The proposed amplifier embodies a 2-order feedback path architecture instead of direct feedback of output to input of the integrator to decrease the high frequency intermodulation distortion associated with direct feedback and eliminate the integrator input common mode disturbance from the output in ternary modulation. The prototype class D amplifier realized in 0.35 μm digital technology achieves a THD+N of 0.02% when delivering 400 mW to an 8 {{Ω }} load from {V}{DD}=3.6 {{V}}. The PSRR of the prototype class D amplifier is 80 dB at 217 Hz. Furthermore a filterless method that can eliminate the external LC filter is employed which offers great advantages of saving PCB space and lowering system cost. In addition the prototype class D amplifier can operate in large voltage range with V DD range from 2.5 to 4.2 V in mobile application. The total area of the amplifier is 1.7 mm2. Project supported by the National Natural Science Foundation of China (Nos. 61234002, 61322405, 61306044).
Polarized millijoule fiber laser system with high beam quality and pulse shaping ability
NASA Astrophysics Data System (ADS)
Zhang, Rui; Tian, Xiaocheng; Xu, Dangpeng; Zhou, Dandan; Zong, Zhaoyu; Li, Hongxun; Fan, Mengqiu; Huang, Zhihua; Zhu, Na; Su, Jingqin; Zhu, Qihua; Jing, Feng
2017-05-01
The coherent amplification network (CAN) aims at developing a laser system based on the coherent combination of multiple laser beams, which are produced through a network of high beam quality optical fiber amplifiers. The scalability of the CAN laser facilitates the development of many novel applications, such as fiber-based acceleration, orbital debris removal and inertial confinement fusion energy. According to the requirements of CAN and the front end of high-power laser facilities, a millijoule polarized fiber laser system was studied in this paper. Using polarization maintaining Ytterbium-fiber laser system as the seed, and 10-μm core Yb-doped fiber amplifier as the first power amplifier and 40-μm core polarizing (PZ) photonic crystal fiber (PCF) as the second power amplifier, the all-fiber laser system outputs 1.06-mJ energy at 10 ns and diffraction limited mode quality. Using 85-μm rod-type PCF as the third power amplifiers, 2.5-mJ energy at 10-ns pulse width was obtained with better than 500:1 peak-to-foot pulse shaping ability and fundamental mode beam quality. The energy fluctuation of the system is 1.3% rms with 1-mJ output in one hour. When using phase-modulated pulse as the seed, the frequency modulation to amplitude modulation (FM-to-AM) conversion ratio of the system is better than 5%. This fiber laser system has the advantages of high beam quality, high beam shaping ability, good stability, small volume and free of maintenance, which can be used in many applications.
Demonstration of a Sub-Millimeter Wave Integrated Circuit (S-MMIC) using InP HEMT with a 35-nm Gate
NASA Technical Reports Server (NTRS)
Deal, W. R.; Din, S.; Padilla, J.; Radisic, V.; Mei, G.; Yoshida, W.; Liu, P. S.; Uyeda, J.; Barsky, M.; Gaier, T.;
2006-01-01
In this paper, we present two single stage MMIC amplifiers with the first demonstrating a measured S21 gain of 3-dB at 280-GHz and the second demonstrating 2.5-dB gain at 300- GHz, which is the threshold of the sub-millimeter wave regime. The high-frequency operation is enabled by a high-speed InP HEMT with a 35-nm gate. This is the first demonstrated S21 gain at sub-millimeter wave frequencies in a MMIC.
BICMOS power detector for pulsed Rf power amplifiers
DOE Office of Scientific and Technical Information (OSTI.GOV)
Bridge, Clayton D.
2016-10-01
A BiCMOS power detector for pulsed radio-frequency power amplifiers is proposed. Given the pulse waveform and a fraction of the power amplifier's input or output signal, the detector utilizes a low-frequency feedback loop to perform a successive approximation of the amplitude of the input signal. Upon completion of the successive approximation, the detector returns 9-bits representing the amplitude of the RF input signal. Using the pulse waveform from the power amplifier, the detector can dynamically adjust the rate of the binary search operation in order to return the updated amplitude information of the RF input signal at least every 1ms.more » The detector can handle pulse waveform frequencies from 50kHz to 10MHz with duty cycles in the range of 5- 50% and peak power levels of -10 to 10dBm. The signal amplitude measurement can be converted to a peak power measurement accurate to within ±0.6dB of the input RF power.« less
Jeyaprakash, Ayyamperumal; Hoy, Marjorie A
2004-07-01
Amplifying microbial DNA by the polymerase chain reaction (PCR) from single phytoseiid mites has been difficult, perhaps due to the low titer of bacteria and to interference by the relatively larger amounts of mite genomic DNA. In this paper we evaluate the efficiency of standard and high-fidelity PCR protocols subsequent to amplification of the whole genome by a multiple displacement amplification (MDA) procedure developed by Dean et al. DNA from the phytoseiid Phytoseiulus persimilis (Athias-Henriot) was tested because it lacks a Cytophaga-like organism (CLO) and we could add known amounts of a plasmid containing a cloned 16S rRNA gene fragment from a CLO from Metaseiulus occidentalis (Nesbitt). P. persimilis genomic DNA was mixed with the serially diluted plasmid and amplified using MDA followed by either standard or high-fidelity PCR. MDA followed by high-fidelity PCR was most efficient and successfully amplified an expected 1.5-kb band from as little as 0.01fg of the plasmid, which is equivalent to about 1 copy. MDA followed by high-fidelity PCR also consistently amplified Wolbachia- or CLO-specific products from naturally infected single females or eggs of M. occidentalis, which will allow detailed studies of infection frequency and transmission of several microorganisms associated with this predatory mite.
High-Power, High-Frequency Si-Based (SiGe) Transistors Developed
NASA Technical Reports Server (NTRS)
Ponchak, George E.
2002-01-01
Future NASA, DOD, and commercial products will require electronic circuits that have greater functionality and versatility but occupy less space and cost less money to build and integrate than current products. System on a Chip (SOAC), a single semiconductor substrate containing circuits that perform many functions or containing an entire system, is widely recognized as the best technology for achieving low-cost, small-sized systems. Thus, a circuit technology is required that can gather, process, store, and transmit data or communications. Since silicon-integrated circuits are already used for data processing and storage and the infrastructure that supports silicon circuit fabrication is very large, it is sensible to develop communication circuits on silicon so that all the system functions can be integrated onto a single wafer. Until recently, silicon integrated circuits did not function well at the frequencies required for wireless or microwave communications, but with the introduction of small amounts of germanium into the silicon to make silicon-germanium (SiGe) transistors, silicon-based communication circuits are possible. Although microwavefrequency SiGe circuits have been demonstrated, there has been difficulty in obtaining the high power from their transistors that is required for the amplifiers of a transmitter, and many researchers have thought that this could not be done. The NASA Glenn Research Center and collaborators at the University of Michigan have developed SiGe transistors and amplifiers with state-of-the-art output power at microwave frequencies from 8 to 20 GHz. These transistors are fabricated using standard silicon processing and may be integrated with CMOS integrated circuits on a single chip. A scanning electron microscope image of a typical SiGe heterojunction bipolar transistor is shown in the preceding photomicrograph. This transistor achieved a record output power of 550 mW and an associated power-added efficiency of 33 percent at 8.4 GHz, as shown. Record performance was also demonstrated at 12.6 and 18 GHz. Developers have combined these state-of-the-art transistors with transmission lines and micromachined passive circuit components, such as inductors and capacitors, to build multistage amplifiers. Currently, a 1-W, 8.4-GHz power amplifier is being built for NASA deep space communication architectures.
Multi-frequency klystron designed for high efficiency
DOE Office of Scientific and Technical Information (OSTI.GOV)
Jensen, Aaron
A multi-frequency klystron has an electron gun which generates a beam, a circuit of bunch-align-collect (BAC) tuned cavities that bunch the beam and amplify an RF signal, a collector where the beam is collected and dumped, and a standard output cavity and waveguide coupled to a window to output RF power at a fundamental mode to an external load. In addition, the klystron has additional bunch-align-collect (BAC) cavities tuned to a higher harmonic frequency, and a harmonic output cavity and waveguide coupled via a window to an additional external load.
Initial operation of a pulse-burst laser system for high-repetition-rate Thomson scattering
DOE Office of Scientific and Technical Information (OSTI.GOV)
Harris, W. S.; Hurst, N. C.; Den Hartog, D. J.
2010-10-15
A pulse-burst laser has been installed for Thomson scattering measurements on the Madison Symmetric Torus reversed-field pinch. The laser design is a master-oscillator power-amplifier. The master oscillator is a commercial Nd:YVO{sub 4} laser (1064 nm) which is capable of Q-switching at frequencies between 5 and 250 kHz. Four Nd:YAG (yttrium aluminum garnet) amplifier stages are in place to amplify the Nd:YVO{sub 4} emission. Single pulses through the Nd:YAG amplifier stages gives energies up to 1.5 J and the gain for each stage has been measured. Repetitive pulsing at 10 kHz has also been performed for 2 ms bursts, giving averagemore » pulse energies of 0.53 J with {Delta}E/E of 4.6%, where {Delta}E is the standard deviation between pulses. The next step will be to add one of two Nd:glass (silicate) amplifier stages to produce final pulse energies of 1-2 J for bursts up to 250 kHz.« less
High-Speed, high-power, switching transistor
NASA Technical Reports Server (NTRS)
Carnahan, D.; Ohu, C. K.; Hower, P. L.
1979-01-01
Silicon transistor rate for 200 angstroms at 400 to 600 volts combines switching speed of transistors with ruggedness, power capacity of thyristor. Transistor introduces unique combination of increased power-handling capability, unusally low saturation and switching losses, and submicrosecond switching speeds. Potential applications include high power switching regulators, linear amplifiers, chopper controls for high frequency electrical vehicle drives, VLF transmitters, RF induction heaters, kitchen cooking ranges, and electronic scalpels for medical surgery.
Modeling a Common-Source Amplifier Using a Ferroelectric Transistor
NASA Technical Reports Server (NTRS)
Sayyah, Rana; Hunt, Mitchell; MacLeond, Todd C.; Ho, Fat D.
2010-01-01
This paper presents a mathematical model characterizing the behavior of a common-source amplifier using a FeFET. The model is based on empirical data and incorporates several variables that affect the output, including frequency, load resistance, and gate-to-source voltage. Since the common-source amplifier is the most widely used amplifier in MOS technology, understanding and modeling the behavior of the FeFET-based common-source amplifier will help in the integration of FeFETs into many circuits.
Non-Gaussian statistics of soliton timing jitter induced by amplifier noise.
Ho, Keang-Po
2003-11-15
Based on first-order perturbation theory of the soliton, the Gordon-Haus timing jitter induced by amplifier noise is found to be non-Gaussian distributed. Both frequency and timing jitter have larger tail probabilities than Gaussian distribution given by the linearized perturbation theory. The timing jitter has a larger discrepancy from Gaussian distribution than does the frequency jitter.
Erbium-doped zinc-oxide waveguide amplifiers for hybrid photonic integrated circuits
NASA Astrophysics Data System (ADS)
O'Neal, Lawrence; Anthony, Deion; Bonner, Carl; Geddis, Demetris
2016-02-01
CMOS logic circuits have entered the sub-100nm regime, and research is on-going to investigate the quantum effects that are apparent at this dimension. To avoid some of the constraints imposed by fabrication, entropy, energy, and interference considerations for nano-scale devices, many have begun designing hybrid and/or photonic integrated circuits. These circuits consist of transistors, light emitters, photodetectors, and electrical and optical waveguides. As attenuation is a limiting factor in any communications system, it is advantageous to integrate a signal amplifier. There are numerous examples of electrical amplifiers, but in order to take advantage of the benefits provided by optically integrated systems, optical amplifiers are necessary. The erbium doped fiber amplifier is an example of an optical amplifier which is commercially available now, but the distance between the amplifier and the device benefitting from amplification can be decreased and provide greater functionality by providing local, on-chip amplification. Zinc oxide is an attractive material due to its electrical and optical properties. Its wide bandgap (≍3.4 eV) and high refractive index (≍2) make it an excellent choice for integrated optics systems. Moreover, erbium doped zinc oxide (Er:ZnO) is a suitable candidate for optical waveguide amplifiers because of its compatibility with semiconductor processing technology, 1.54 μm luminescence, transparency, low resistivity, and amplification characteristics. This research presents the characterization of radio frequency magnetron sputtered Er:ZnO, the design and fabrication of integrated waveguide amplifiers, and device analysis.
Interferometric sensor based on the polarization-maintaining fibers
NASA Astrophysics Data System (ADS)
Cubik, Jakub; Kepak, Stanislav; Doricak, Jan; Vašinek, Vladimir; Liner, Andrej; Papes, Martin
2012-01-01
The interferometers composed of optical fibers are due to its high sensitivity capable of to measure various influences affecting the fiber. These influences may be bending or different sorts of fiber deformations, vibration, temperature, etc. In this case the vibration is the measured quantity, which is evaluated by analyzing the interference fringes representing changes in the fiber. Was used a Mach-Zehnder interferometer composed of the polarization maintaining elements. The polarization maintaining elements were used because of high sensitivity to polarization state inside the interferometer. The light was splitted into the two optical paths, where the first one is the reference fiber and it is separated from the actual phenomenon, and the second one is measuring fiber, which is directly exposed to vibration transmission from the underlying surface. The light source was narrowband DFB laser serating at a wavelength of 1550nm and as a detector an InGaAs PIN photodiode were used in this measurement. The electrical signal from the photodiode was amplified and fed into the measuring card. On the incoming signal the FFT was applied, which performs the transformation into the frequency domain and the results were further evaluated by software. We were evaluating the characteristic frequencies and their amplitude ratios. The frequency responses are unique for a given phenomenon, thus it is possible to identify recurring events by the characteristic frequencies and their amplitude ratios. The frequency range was limited by the properties of the used speaker, by the frequency characteristics of the filter in the amplifier and used resonant element. For the experiment evaluation the repeated impact of the various spherical objects on the surface board was performed and measured. The stability of amplitude and frequency and also the frequency range was verified in this measurement.
Broadband pump-probe spectroscopy at 20-MHz modulation frequency.
Preda, Fabrizio; Kumar, Vikas; Crisafi, Francesco; Figueroa Del Valle, Diana Gisell; Cerullo, Giulio; Polli, Dario
2016-07-01
We introduce an innovative high-sensitivity broadband pump-probe spectroscopy system, based on Fourier-transform detection, operating at 20-MHz modulation frequency. A common-mode interferometer employing birefringent wedges creates two phase-locked delayed replicas of the broadband probe pulse, interfering at a single photodetector. A single-channel lock-in amplifier demodulates the interferogram, whose Fourier transform provides the differential transmission spectrum. Our approach combines broad spectral coverage with high sensitivity, due to high-frequency modulation and detection. We demonstrate its performances by measuring two-dimensional differential transmission maps of a carbon nanotubes sample, simultaneously acquiring the signal over the entire 950-1350 nm range with 2.7·10-6 rms noise over 1.5 s integration time.
The physics of hearing: fluid mechanics and the active process of the inner ear.
Reichenbach, Tobias; Hudspeth, A J
2014-07-01
Most sounds of interest consist of complex, time-dependent admixtures of tones of diverse frequencies and variable amplitudes. To detect and process these signals, the ear employs a highly nonlinear, adaptive, real-time spectral analyzer: the cochlea. Sound excites vibration of the eardrum and the three miniscule bones of the middle ear, the last of which acts as a piston to initiate oscillatory pressure changes within the liquid-filled chambers of the cochlea. The basilar membrane, an elastic band spiraling along the cochlea between two of these chambers, responds to these pressures by conducting a largely independent traveling wave for each frequency component of the input. Because the basilar membrane is graded in mass and stiffness along its length, however, each traveling wave grows in magnitude and decreases in wavelength until it peaks at a specific, frequency-dependent position: low frequencies propagate to the cochlear apex, whereas high frequencies culminate at the base. The oscillations of the basilar membrane deflect hair bundles, the mechanically sensitive organelles of the ear's sensory receptors, the hair cells. As mechanically sensitive ion channels open and close, each hair cell responds with an electrical signal that is chemically transmitted to an afferent nerve fiber and thence into the brain. In addition to transducing mechanical inputs, hair cells amplify them by two means. Channel gating endows a hair bundle with negative stiffness, an instability that interacts with the motor protein myosin-1c to produce a mechanical amplifier and oscillator. Acting through the piezoelectric membrane protein prestin, electrical responses also cause outer hair cells to elongate and shorten, thus pumping energy into the basilar membrane's movements. The two forms of motility constitute an active process that amplifies mechanical inputs, sharpens frequency discrimination, and confers a compressive nonlinearity on responsiveness. These features arise because the active process operates near a Hopf bifurcation, the generic properties of which explain several key features of hearing. Moreover, when the gain of the active process rises sufficiently in ultraquiet circumstances, the system traverses the bifurcation and even a normal ear actually emits sound. The remarkable properties of hearing thus stem from the propagation of traveling waves on a nonlinear and excitable medium.
The physics of hearing: fluid mechanics and the active process of the inner ear
NASA Astrophysics Data System (ADS)
Reichenbach, Tobias; Hudspeth, A. J.
2014-07-01
Most sounds of interest consist of complex, time-dependent admixtures of tones of diverse frequencies and variable amplitudes. To detect and process these signals, the ear employs a highly nonlinear, adaptive, real-time spectral analyzer: the cochlea. Sound excites vibration of the eardrum and the three miniscule bones of the middle ear, the last of which acts as a piston to initiate oscillatory pressure changes within the liquid-filled chambers of the cochlea. The basilar membrane, an elastic band spiraling along the cochlea between two of these chambers, responds to these pressures by conducting a largely independent traveling wave for each frequency component of the input. Because the basilar membrane is graded in mass and stiffness along its length, however, each traveling wave grows in magnitude and decreases in wavelength until it peaks at a specific, frequency-dependent position: low frequencies propagate to the cochlear apex, whereas high frequencies culminate at the base. The oscillations of the basilar membrane deflect hair bundles, the mechanically sensitive organelles of the ear's sensory receptors, the hair cells. As mechanically sensitive ion channels open and close, each hair cell responds with an electrical signal that is chemically transmitted to an afferent nerve fiber and thence into the brain. In addition to transducing mechanical inputs, hair cells amplify them by two means. Channel gating endows a hair bundle with negative stiffness, an instability that interacts with the motor protein myosin-1c to produce a mechanical amplifier and oscillator. Acting through the piezoelectric membrane protein prestin, electrical responses also cause outer hair cells to elongate and shorten, thus pumping energy into the basilar membrane's movements. The two forms of motility constitute an active process that amplifies mechanical inputs, sharpens frequency discrimination, and confers a compressive nonlinearity on responsiveness. These features arise because the active process operates near a Hopf bifurcation, the generic properties of which explain several key features of hearing. Moreover, when the gain of the active process rises sufficiently in ultraquiet circumstances, the system traverses the bifurcation and even a normal ear actually emits sound. The remarkable properties of hearing thus stem from the propagation of traveling waves on a nonlinear and excitable medium.
Design of a MEMS-Based Oscillator Using 180nm CMOS Technology.
Roy, Sukanta; Ramiah, Harikrishnan; Reza, Ahmed Wasif; Lim, Chee Cheow; Ferrer, Eloi Marigo
2016-01-01
Micro-electro mechanical system (MEMS) based oscillators are revolutionizing the timing industry as a cost effective solution, enhanced with more features, superior performance and better reliability. The design of a sustaining amplifier was triggered primarily to replenish MEMS resonator's high motion losses due to the possibility of their 'system-on-chip' integrated circuit solution. The design of a sustaining amplifier observing high gain and adequate phase shift for an electrostatic clamp-clamp (C-C) beam MEMS resonator, involves the use of an 180nm CMOS process with an unloaded Q of 1000 in realizing a fixed frequency oscillator. A net 122dBΩ transimpedance gain with adequate phase shift has ensured 17.22MHz resonant frequency oscillation with a layout area consumption of 0.121 mm2 in the integrated chip solution, the sustaining amplifier draws 6.3mW with a respective phase noise of -84dBc/Hz at 1kHz offset is achieved within a noise floor of -103dBC/Hz. In this work, a comparison is drawn among similar design studies on the basis of a defined figure of merit (FOM). A low phase noise of 1kHz, high figure of merit and the smaller size of the chip has accredited to the design's applicability towards in the implementation of a clock generative integrated circuit. In addition to that, this complete silicon based MEMS oscillator in a monolithic solution has offered a cost effective solution for industrial or biomedical electronic applications.
Implementation of a novel efficient low cost method in structural health monitoring
NASA Astrophysics Data System (ADS)
Asadi, S.; Sepehry, N.; Shamshirsaz, M.; Vaghasloo, Y. A.
2017-05-01
In active structural health monitoring (SHM) methods, it is necessary to excite the structure with a preselected signal. More studies in the field of active SHM are focused on applying SHM on higher frequency ranges since it is possible to detect smaller damages, using higher excitation frequency. Also, to increase spatial domain of measurements and enhance signal to noise ratio (SNR), the amplitude of excitation signal is usually amplified. These issues become substantial where piezoelectric transducers with relatively high capacitance are used and consequently, need to utilize high power amplifiers becomes predominant. In this paper, a novel method named Step Excitation Method (SEM) is proposed and implemented for Lamb wave and transfer impedance-based SHM for damage detection in structures. Three different types of structure are studied: beam, plate and pipe. The related hardware is designed and fabricated which eliminates high power analog amplifiers and decreases complexity of driver significantly. Spectral Finite Element Method (SFEM) is applied to examine performance of proposed SEM. In proposed method, by determination of impulse response of the system, any input could be applied to the system by both finite element simulations and experiments without need for multiple measurements. The experimental results using SEM are compared with those obtained by conventional direct excitation method for healthy and damaged structures. The results show an improvement of amplitude resolution in damage detection comparing to conventional method which is due to achieving an SNR improvement up to 50%.
Origin of 1/f PM and AM noise in bipolar junction transistor amplifiers.
Walls, F L; Ferre-Pikal, E S; Jefferts, S R
1997-01-01
In this paper we report the results of extensive research on phase modulation (PM) and amplitude modulation (AM) noise in linear bipolar junction transistor (BJT) amplifiers. BJT amplifiers exhibit 1/f PM and AM noise about a carrier signal that is much larger than the amplifiers thermal noise at those frequencies in the absence of the carrier signal. Our work shows that the 1/f PM noise of a BJT based amplifier is accompanied by 1/f AM noise which can be higher, lower, or nearly equal, depending on the circuit implementation. The 1/f AM and PM noise in BJTs is primarily the result of 1/f fluctuations in transistor current, transistor capacitance, circuit supply voltages, circuit impedances, and circuit configuration. We discuss the theory and present experimental data in reference to common emitter amplifiers, but the analysis can be applied to other configurations as well. This study provides the functional dependence of 1/f AM and PM noise on transistor parameters, circuit parameters, and signal frequency, thereby laying the groundwork for a comprehensive theory of 1/f AM and PM noise in BJT amplifiers. We show that in many cases the 1/f PM and AM noise can be reduced below the thermal noise of the amplifier.
Lim, Jinkang; Chen, Hung-Wen; Chang, Guoqing; Kärtner, Franz X
2013-02-25
Laser frequency combs are normally based on mode-locked oscillators emitting ultrashort pulses of ~100-fs or shorter. In this paper, we present a self-referenced frequency comb based on a narrowband (5-nm bandwidth corresponding to 415-fs transform-limited pulses) Yb-fiber oscillator with a repetition rate of 280 MHz. We employ a nonlinear Yb-fiber amplifier to both amplify the narrowband pulses and broaden their optical spectrum. To optimize the carrier envelope offset frequency (fCEO), we optimize the nonlinear pulse amplification by pre-chirping the pulses at the amplifier input. An optimum negative pre-chirp exists, which produces a signal-to-noise ratio of 35 dB (100 kHz resolution bandwidth) for the detected fCEO. We phase stabilize the fCEO using a feed-forward method, resulting in 0.64-rad (integrated from 1 Hz to 10 MHz) phase noise for the in-loop error signal. This work demonstrates the feasibility of implementing frequency combs from a narrowband oscillator, which is of particular importance for realizing large line-spacing frequency combs based on multi-GHz oscillators usually emitting long (>200 fs) pulses.
PWM Switching Frequency Effects on Eddy Current Sensors for Magnetically Suspended Flywheel Systems
NASA Technical Reports Server (NTRS)
Jansen, Ralph; Lebron, Ramon; Dever, Timothy P.; Birchenough, Arthur G.
2003-01-01
A flywheel magnetic bearing (MB) pulse width modulated power amplifier (PWM) configuration is selected to minimize noise generated by the PWMs in the flywheel position sensor system. Two types of noise are addressed: beat frequency noise caused by variations in PWM switching frequencies, and demodulation noise caused by demodulation of high order harmonics of the switching voltage into the MB control band. Beat frequency noise is eliminated by synchronizing the PWM switch frequencies, and demodulation noise is minimized by selection of a switching frequency which does not have harmonics at the carrier frequency of the sensor. The recommended MB PWM system has five synchronized PWMs switching at a non-integer harmonic of the sensor carrier.
Gudino, N.; Heilman, J.A; Riffe, M. J.; Heid, O.; Vester, M.; Griswold, M.A.
2016-01-01
A complete high-efficiency transmit amplifier unit designed to be implemented in on-coil transmit arrays is presented. High power capability, low power dissipation, scalability and cost minimization were some of the requirements imposed to the design. The system is composed of a current mode class-D (CMCD) amplifier output stage and a voltage mode class-D (VMCD) preamplification stage. The amplitude information of the radio frequency pulse was added through a customized step-down DC-DC converter with current amplitude feedback that connects to the CMCD stage. Benchtop measurements and imaging experiments were carried out to analyze system performance. Direct control of B1 was possible and its load sensitivity was reduced to less than 10% variation from unloaded to full loaded condition. When using the amplifiers in an array configuration, isolation above 20 dB was achieved between neighboring coils by the amplifier decoupling method. High output current operation of the transmitter was proved on the benchtop through output power measurements and in a 1.5 T scanner through flip angle quantification. Finally, single and multiple channel excitations with the new hardware were demonstrated by receiving signal with the body coil of the scanner. PMID:22890962
Gudino, Natalia; Heilman, Jeremiah A; Riffe, Matthew J; Heid, Oliver; Vester, Markus; Griswold, Mark A
2013-07-01
A complete high-efficiency transmit amplifier unit designed to be implemented in on-coil transmit arrays is presented. High power capability, low power dissipation, scalability, and cost minimization were some of the requirements imposed to the design. The system is composed of a current mode class-D amplifier output stage and a voltage mode class-D preamplification stage. The amplitude information of the radio frequency pulse was added through a customized step-down DC-DC converter with current amplitude feedback that connects to the current mode class-D stage. Benchtop measurements and imaging experiments were carried out to analyze system performance. Direct control of B1 was possible and its load sensitivity was reduced to less than 10% variation from unloaded to full loaded condition. When using the amplifiers in an array configuration, isolation above 20 dB was achieved between neighboring coils by the amplifier decoupling method. High output current operation of the transmitter was proved on the benchtop through output power measurements and in a 1.5T scanner through flip angle quantification. Finally, single and multiple channel excitations with the new hardware were demonstrated by receiving signal with the body coil of the scanner. Copyright © 2012 Wiley Periodicals, Inc.
High-frequency noise characterization of graphene field effect transistors on SiC substrates
NASA Astrophysics Data System (ADS)
Yu, C.; He, Z. Z.; Song, X. B.; Liu, Q. B.; Dun, S. B.; Han, T. T.; Wang, J. J.; Zhou, C. J.; Guo, J. C.; Lv, Y. J.; Cai, S. J.; Feng, Z. H.
2017-07-01
Considering its high carrier mobility and high saturation velocity, a low-noise amplifier is thought of as being the most attractive analogue application of graphene field-effect transistors. The noise performance of graphene field-effect transistors at frequencies in the K-band remains unknown. In this work, the noise parameters of a graphene transistor are measured from 10 to 26 GHz and noise models are built with the data. The extrinsic minimum noise figure for a graphene transistor reached 1.5 dB, and the intrinsic minimum noise figure was as low as 0.8 dB at a frequency of 10 GHz, which were comparable with the results from tests on Si CMOS and started to approach those for GaAs and InP transistors. Considering the short development time, the current results are a significant step forward for graphene transistors and show their application potential in high-frequency electronics.
All solid-state high power visible laser
NASA Technical Reports Server (NTRS)
Grossman, William M.
1993-01-01
The overall objective of this Phase 2 effort was to develop and deliver to NASA a high repetition rate laser-diode-pumped solid-state pulsed laser system with output in the green portion of the spectrum. The laser is for use in data communications, and high efficiency, short pulses, and low timing jitter are important features. A short-pulse 1 micron laser oscillator, a new multi-pass amplifier to boost the infrared power, and a frequency doubler to take the amplified infrared pulsed laser light into the green. This produced 1.5 W of light in the visible at a pulse repetition rate of 20 kHz in the laboratory. The pulses have a full-width at half maximum of near 1 ns. The results of this program are being commercialized.
A CMOS power-efficient low-noise current-mode front-end amplifier for neural signal recording.
Wu, Chung-Yu; Chen, Wei-Ming; Kuo, Liang-Ting
2013-04-01
In this paper, a new current-mode front-end amplifier (CMFEA) for neural signal recording systems is proposed. In the proposed CMFEA, a current-mode preamplifier with an active feedback loop operated at very low frequency is designed as the first gain stage to bypass any dc offset current generated by the electrode-tissue interface and to achieve a low high-pass cutoff frequency below 0.5 Hz. No reset signal or ultra-large pseudo resistor is required. The current-mode preamplifier has low dc operation current to enhance low-noise performance and decrease power consumption. A programmable current gain stage is adopted to provide adjustable gain for adaptive signal scaling. A following current-mode filter is designed to adjust the low-pass cutoff frequency for different neural signals. The proposed CMFEA is designed and fabricated in 0.18-μm CMOS technology and the area of the core circuit is 0.076 mm(2). The measured high-pass cutoff frequency is as low as 0.3 Hz and the low-pass cutoff frequency is adjustable from 1 kHz to 10 kHz. The measured maximum current gain is 55.9 dB. The measured input-referred current noise density is 153 fA /√Hz , and the power consumption is 13 μW at 1-V power supply. The fabricated CMFEA has been successfully applied to the animal test for recording the seizure ECoG of Long-Evan rats.
Single image super resolution algorithm based on edge interpolation in NSCT domain
NASA Astrophysics Data System (ADS)
Zhang, Mengqun; Zhang, Wei; He, Xinyu
2017-11-01
In order to preserve the texture and edge information and to improve the space resolution of single frame, a superresolution algorithm based on Contourlet (NSCT) is proposed. The original low resolution image is transformed by NSCT, and the directional sub-band coefficients of the transform domain are obtained. According to the scale factor, the high frequency sub-band coefficients are amplified by the interpolation method based on the edge direction to the desired resolution. For high frequency sub-band coefficients with noise and weak targets, Bayesian shrinkage is used to calculate the threshold value. The coefficients below the threshold are determined by the correlation among the sub-bands of the same scale to determine whether it is noise and de-noising. The anisotropic diffusion filter is used to effectively enhance the weak target in the low contrast region of the target and background. Finally, the high-frequency sub-band is amplified by the bilinear interpolation method to the desired resolution, and then combined with the high-frequency subband coefficients after de-noising and small target enhancement, the NSCT inverse transform is used to obtain the desired resolution image. In order to verify the effectiveness of the proposed algorithm, the proposed algorithm and several common image reconstruction methods are used to test the synthetic image, motion blurred image and hyperspectral image, the experimental results show that compared with the traditional single resolution algorithm, the proposed algorithm can obtain smooth edges and good texture features, and the reconstructed image structure is well preserved and the noise is suppressed to some extent.
NASA Technical Reports Server (NTRS)
Mclyman, C. W.
1983-01-01
Compact dc/dc inverter uses single integrated-circuit package containing six inverter gates that generate and amplify 100-kHz square-wave switching signal. Square-wave switching inverts 10-volt local power to isolated voltage at another desired level. Relatively high operating frequency reduces size of filter capacitors required, resulting in small package unit.
Design and fabrication of a new electrolarynx and voice amplifier for laryngectomees.
Sundeep Krishna, M; Jayanthy, A K; Divakar, C; Mekhala, R
2005-01-01
A Laryngectomee is a person whose vocal cords i.e. voice box is surgically removed owing to cancer or due to automobile accidents, burns or trauma. The patient, therefore permanently loses the ability to speak normally. An Electrolarynx is an electronic speech aid that enables the Laryngectomee to communicate with other people as quickly as possible after the successful removal of the larynx. A neck type Electrolarynx has been designed. Earlier designs could not alter frequency and intensity simultaneously during conversation. The Electrolarynx developed can control both frequency and intensity simultaneously during conversation. The device has been tested on the patient and found to be very effective. A portable, pocket size, battery powered voice amplifier (PA system) has also been developed which uses an electret condenser microphone as the input. The voice amplifier developed is a two stage amplifier which uses a preamplifier stage and a power amplifier stage. The output of the power amplifier is connected to a speaker. The device is being used by the patient and found to be very useful.
Nonlinear system analysis in bipolar integrated circuits
NASA Astrophysics Data System (ADS)
Fang, T. F.; Whalen, J. J.
1980-01-01
Since analog bipolar integrated circuits (IC's) have become important components in modern communication systems, the study of the Radio Frequency Interference (RFI) effects in bipolar IC amplifiers is an important subject for electromagnetic compatibility (EMC) engineering. The investigation has focused on using the nonlinear circuit analysis program (NCAP) to predict RF demodulation effects in broadband bipolar IC amplifiers. The audio frequency (AF) voltage at the IC amplifier output terminal caused by an amplitude modulated (AM) RF signal at the IC amplifier input terminal was calculated and compared to measured values. Two broadband IC amplifiers were investigated: (1) a cascode circuit using a CA3026 dual differential pair; (2) a unity gain voltage follower circuit using a micro A741 operational amplifier (op amp). Before using NCAP for RFI analysis, the model parameters for each bipolar junction transistor (BJT) in the integrated circuit were determined. Probe measurement techniques, manufacturer's data, and other researcher's data were used to obtain the required NCAP BJT model parameter values. An important contribution included in this effort is a complete set of NCAP BJT model parameters for most of the transistor types used in linear IC's.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Baca, A.G.; Hietala, V.M.; Greenway, D.
1998-05-01
In this work the authors report results of narrowband amplifiers designed for milliwatt and submilliwatt power consumption using JFET and pseudomorphic high electron mobility transistors (PHEMT) GaAs-based technologies. Enhancement-mode JFETs were used to design both a hybrid amplifier with off-chip matching as well as a monolithic microwave integrated circuit (MMIC) with on-chip matching. The hybrid amplifier achieved 8--10 dB of gain at 2.4 GHz and 1 mW. The MMIC achieved 10 dB of gain at 2.4 GHz and 2 mW. Submilliwatt circuits were also explored by using 0.25 {micro}m PHEMTs. 25 {micro}W power levels were achieved with 5 dB ofmore » gain for a 215 MHz hybrid amplifier. These results significantly reduce power consumption levels achievable with the JFETs or prior MESFET, heterostructure field effect transistor (HFET), or Si bipolar results from other laboratories.« less
A low noise synthesizer for autotuning and performance testing of hydrogen masers
NASA Technical Reports Server (NTRS)
Cloeren, J. M.; Ingold, J. S.
1984-01-01
A low noise synthesizer has been developed for use in hydrogen maser autotuning and performance evaluation. This synthesizer replaces the frequency offset maser normally used for this purpose and allows the user to maintain all masers in the ensemble at the same frequency. The synthesizer design utilizes a quartz oscillator with a BVA resonator. The oscillator has a frequency offset of 5 X 10 to the minus 8 power. The BVA oscillator is phase-locked to a hydrogen maser by means of a high gain, high stability phase-locked loop, employing low noise multipliers as phase error amplifiers. A functional block diagram of the synthesizer and performance data will be presented.
Design of a 0.13 µm SiGe Limiting Amplifier with 14.6 THz Gain-Bandwidth-Product
NASA Astrophysics Data System (ADS)
Park, Sehoon; Du, Xuan-Quang; Grözing, Markus; Berroth, Manfred
2017-09-01
This paper presents the design of a limiting amplifier with 1-to-3 fan-out implementation in a 0.13 µm SiGe BiCMOS technology and gives a detailed guideline to determine the circuit parameters of the amplifier for optimum high-frequency performance based on simplified gain estimations. The proposed design uses a Cherry-Hooper topology for bandwidth enhancement and is optimized for maximum group delay flatness to minimize phase distortion of the input signal. With regard to a high integration density and a small chip area, the design employs no passive inductors which might be used to boost the circuit bandwidth with inductive peaking. On a RLC-extracted post-layout simulation level, the limiting amplifier exhibits a gain-bandwidth-product of 14.6 THz with 56.6 dB voltage gain and 21.5 GHz 3 dB bandwidth at a peak-to-peak input voltage of 1.5 mV. The group delay variation within the 3 dB bandwidth is less than 0.5 ps and the power dissipation at a power supply voltage of 3 V including output drivers is 837 mW.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Bhattacharyya, Sampriti; Pilipenko, Roman; /Fermilab
2010-01-01
Superconducting accelerators, such as the International Linear Collider (ILC), rely on very high Q accelerating cavities to achieve high electric fields at low RF power. Such cavities have very narrow resonances: a few kHz with a 1.3GHz resonance frequency for the ILC. Several mechanical factors cause tune shifts much larger than this: pressure variations in the liquid helium bath; microphonics from pumps and other mechanical devices; and for a pulsed machine such as the ILC, Lorentz force detuning (pressure from the contained RF field). Simple passive stiffening is limited by many manufacturing and material considerations. Therefore, active tuning using piezomore » actuators is needed. Here we study a supply for their operation. Since commercial power amplifiers are expensive, we analyzed the characteristics of four power amplifiers: (iPZD) built by Istituto Nazionale di Fisica Nucleare (Sezione di Pisa); and a DC-DC converter power supply built in Fermilab (Piezo Master); and two commercial amplifiers, Piezosystem jena and Piezomechanik. This paper presents an analysis and characterization of these amplifiers to understand the cost benefit and reliability when using in a large scale, pulsed beam accelerator like the ILC.« less
NASA Astrophysics Data System (ADS)
Ishii, Nobuhisa; Kaneshima, Keisuke; Kanai, Teruto; Watanabe, Shuntaro; Itatani, Jiro
2018-01-01
An optical parametric chirped-pulse amplifier (OPCPA) based on bismuth triborate (BiB3O6, BIBO) crystals has been developed to deliver 1.5 mJ, 10.1 fs optical pulses around 1.6 μm with a repetition rate of 1 kHz and a stable carrier-envelope phase. The seed and pump pulses of the BIBO-based OPCPA are provided from two Ti:sapphire chirped-pulse amplification (CPA) systems. In both CPA systems, transmission gratings are used in the stretchers and compressors that result in a high throughput and robust operation without causing any thermal problem and optical damage. The seed pulses of the OPCPA are generated by intrapulse frequency mixing of a spectrally broadened continuum, temporally stretched to approximately 5 ps then, and amplified to more than 1.5 mJ. The amplified pulses are compressed in a fused silica block down to 10.1 fs. This BIBO-based OPCPA has been applied to high-flux high harmonic generation beyond the carbon K edge at 284 eV. The high-flux soft-x-ray continuum allows measuring the x-ray absorption near-edge structure of the carbon K edge within 2 min, which is shorter than a typical measurement time using synchrotron-based light sources. This laser-based table-top soft-x-ray source is a promising candidate for ultrafast soft x-ray spectroscopy with femtosecond to attosecond time resolution.
The Development of Si and SiGe Technologies for Microwave and Millimeter-Wave Integrated Circuits
NASA Technical Reports Server (NTRS)
Ponchak, George E.; Alterovitz, Samuel A.; Katehi, Linda P. B.; Bhattacharya, Pallab K.
1997-01-01
Historically, microwave technology was developed by military and space agencies from around the world to satisfy their unique radar, communication, and science applications. Throughout this development phase, the sole goal was to improve the performance of the microwave circuits and components comprising the systems. For example, power amplifiers with output powers of several watts over broad bandwidths, low noise amplifiers with noise figures as low as 3 dB at 94 GHz, stable oscillators with low noise characteristics and high output power, and electronically steerable antennas were required. In addition, the reliability of the systems had to be increased because of the high monetary and human cost if a failure occurred. To achieve these goals, industry, academia and the government agencies supporting them chose to develop technologies with the greatest possibility of surpassing the state of the art performance. Thus, Si, which was already widely used for digital circuits but had material characteristics that were perceived to limit its high frequency performance, was bypassed for a progression of devices starting with GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and ending with InP Pseudomorphic High Electron Mobility Transistors (PHEMTs). For each new material or device structure, the electron mobility increased, and therefore, the high frequency characteristics of the device were improved. In addition, ultra small geometry lithographic processes were developed to reduce the gate length to 0.1 pm which further increases the cutoff frequency. The resulting devices had excellent performance through the millimeter-wave spectrum.
Graphene Distributed Amplifiers: Generating Desirable Gain for Graphene Field-Effect Transistors
Lyu, Hongming; Lu, Qi; Huang, Yilin; Ma, Teng; Zhang, Jinyu; Wu, Xiaoming; Yu, Zhiping; Ren, Wencai; Cheng, Hui-Ming; Wu, Huaqiang; Qian, He
2015-01-01
Ever since its discovery, graphene bears great expectations in high frequency electronics due to its irreplaceably high carrier mobility. However, it has long been blamed for the weakness in generating gains, which seriously limits its pace of development. Distributed amplification, on the other hand, has successfully been used in conventional semiconductors to increase the amplifiers’ gain-bandwidth product. In this paper, distributed amplification is first applied to graphene. Transmission lines phase-synchronize paralleled graphene field-effect transistors (GFETs), combining the gain of each stage in an additive manner. Simulations were based on fabricated GFETs whose fT ranged from 8.5 GHz to 10.5 GHz and fmax from 12 GHz to 14 GHz. A simulated four-stage graphene distributed amplifier achieved up to 4 dB gain and 3.5 GHz bandwidth, which could be realized with future IC processes. A PCB level graphene distributed amplifier was fabricated as a proof of circuit concept. PMID:26634442
Narrow linewidth picosecond UV pulsed laser with mega-watt peak power.
Huang, Chunning; Deibele, Craig; Liu, Yun
2013-04-08
We demonstrate a master oscillator power amplifier (MOPA) burst mode laser system that generates 66 ps/402.5 MHz pulses with mega-watt peak power at 355 nm. The seed laser consists of a single frequency fiber laser (linewidth < 5 KHz), a high bandwidth electro-optic modulator (EOM), a picosecond pulse generator, and a fiber based preamplifier. A very high extinction ratio (45 dB) has been achieved by using an adaptive bias control of the EOM. The multi-stage Nd:YAG amplifier system allows a uniformly temporal shaping of the macropulse with a tunable pulse duration. The light output from the amplifier is converted to 355 nm, and over 1 MW peak power is obtained when the laser is operating in a 5-μs/10-Hz macropulse mode. The laser output has a transform-limited spectrum with a very narrow linewidth of individual longitudinal modes. The immediate application of the laser system is the laser-assisted hydrogen ion beam stripping for the Spallation Neutron Source (SNS).
NASA Astrophysics Data System (ADS)
He, Haizhen; Luo, Rongming; Hu, Zhenhua; Wen, Lei
2017-07-01
A current-mode field programmable analog array(FPAA) is presented in this paper. The proposed FPAA consists of 9 configurable analog blocks(CABs) which are based on current differencing transconductance amplifiers (CDTA) and trans-impedance amplifier (TIA). The proposed CABs interconnect through global lines. These global lines contain some bridge switches, which used to reduce the parasitic capacitance effectively. High-order current-mode low-pass and band-pass filter with transmission zeros based on the simulation of general passive RLC ladder prototypes is proposed and mapped into the FPAA structure in order to demonstrate the versatility of the FPAA. These filters exhibit good performance on bandwidth. Filter's cutoff frequency can be tuned from 1.2MHz to 40MHz.The proposed FPAA is simulated in a standard Charted 0.18μm CMOS process with +/-1.2V power supply to confirm the presented theory, and the results have good agreement with the theoretical analysis.
Dispersive Readout of a Superconducting Flux Qubit Using a Microstrip SQUID Amplifier
NASA Astrophysics Data System (ADS)
Johnson, J. E.; Hoskinson, E. M.; Macklin, C.; Siddiqi, I.; Clarke, John
2011-03-01
Dispersive techniques for the readout of superconducting qubits offer the possibility of high repetition-rate, quantum non-demolition measurement by avoiding dissipation close to the qubit. To achieve dispersive readout, we couple our three-junction aluminum flux qubit inductively to a 1-2 GHz non-linear oscillator formed by a capacitively shunted DC SQUID. The frequency of this resonator is modulated by the state of the qubit via the flux-dependent inductance of the SQUID. Readout is performed by probing the resonator in the linear (weak drive) regime with a microwave tone and monitoring the phase of the reflected signal. A microstrip SQUID amplifier (MSA) is used to increase the sensitivity of the measurement over that of a HEMT (high electron mobility transistor) amplifier. We report measurements of the performance of our amplification chain. Increased fidelity and reduced measurement backaction resulting from the implementation of the MSA will also be discussed. This work was funded in part by the U.S. Government and by BBN Technologies.
Wideband quad optical sensor for high-speed sub-nanometer interferometry.
Riobo, L M; Veiras, F E; Sorichetti, P A; Garea, M T
2017-01-20
This paper describes the design and performance of a low-noise and high-speed optical sensor that provides two output signals in quadrature from the simultaneous detection of four phase-shifted interferograms. The sensor employs four high-speed photodiodes and high-speed, low-noise transimpedance amplifiers. The optical and electronic design was optimized for high-speed displacement measurement interferometry, over a broad range of operating frequencies. Compared to other experimental schemes, the sensor is simpler and of lower cost. The performance of the sensor is demonstrated by characterizing a piezoelectric transducer for ultrasonic applications. We measured displacements between 38 pm and 32 nm with 6% relative uncertainty, in the frequency range from 1 to 2 MHz.
Ramezany, Alireza; Pourkamali, Siavash
2018-04-11
Channel-selective filtering and amplification in ultrahigh frequency (UHF) receiver front-ends are crucial for realization of cognitive radio systems and the future of wireless communication. In the past decade, there have been significant advances in the performance of microscale electromechanical resonant devices. However, such devices have not yet been able to meet the requirements for direct channel selection at RF. They also occupy a relatively large area on the chip making implementation of large arrays to cover several frequency bands challenging. On the other hand, electromechanical piezoresistive resonant devices are active devices that have recently shown the possibility of simultaneous signal amplification and channel-select filtering at lower frequencies. It has been theoretically predicted that if scaled down into the nanoscale, they can operate in the UHF range with a very low power consumption. Here, for the first time nanomechanical piezoresistive amplifiers with active element dimensions as small as 50 nm × 200 nm are demonstrated. With a device area of less than 1.5 μm 2 a piezoresistive amplifier operating at 730 MHz shows effective quality factor ( Q) of 89,000 for a 50Ω load and gains as high as 10 dB and Q of 330,000 for a 250Ω load while consuming 189 μW of power. On the basis of the measurement results, it is shown that for piezoresistor dimensions of 30 nm × 100 nm it is possible to get a similar performance at 2.4 GHz with device footprint of less than 0.2 μm 2 .
Lock-in amplifier error prediction and correction in frequency sweep measurements.
Sonnaillon, Maximiliano Osvaldo; Bonetto, Fabian Jose
2007-01-01
This article proposes an analytical algorithm for predicting errors in lock-in amplifiers (LIAs) working with time-varying reference frequency. Furthermore, a simple method for correcting such errors is presented. The reference frequency can be swept in order to measure the frequency response of a system within a given spectrum. The continuous variation of the reference frequency produces a measurement error that depends on three factors: the sweep speed, the LIA low-pass filters, and the frequency response of the measured system. The proposed error prediction algorithm is based on the final value theorem of the Laplace transform. The correction method uses a double-sweep measurement. A mathematical analysis is presented and validated with computational simulations and experimental measurements.
NASA Technical Reports Server (NTRS)
Amzajerdian, Farzin (Inventor); Pierrottet, Diego F. (Inventor)
2015-01-01
A Doppler lidar sensor system includes a laser generator that produces a highly pure single frequency laser beam, and a frequency modulator that modulates the laser beam with a highly linear frequency waveform. A first portion of the frequency modulated laser beam is amplified, and parts thereof are transmitted through at least three separate transmit/receive lenses. A second portion of the laser beam is used as a local oscillator beam for optical heterodyne detection. Radiation from the parts of the laser beam transmitted via the transmit/receive lenses is received by the respective transmit/receive lenses that transmitted the respective part of the laser beam. The received reflected radiation is compared with the local oscillator beam to calculate the frequency difference there between to determine various navigational data.
Overmoded W-Band Traveling Wave Tube Amplifier
2014-11-24
developing high power tubes for use in that frequency range. In addition , there is a window at 220 GHz which is also an area of large development for...equipment. operation. Figure 1-4 shows electronic warfare applications, which involve disrupting electronic systems with high power microwave and millimeter...requiring gyrotrons to power the high -energy beam and a large transport vehicle. In addition to being difficult to transport, it is currently incapable
20-W 1952-nm tandem hybrid single and double clad TDFA
NASA Astrophysics Data System (ADS)
Romano, Clément; Tench, Robert E.; Delavaux, Jean-Marc
2018-02-01
A simple engineering design is important for achieving high Thulium-doped amplifier (TDFA) performance such as good power conversion, low noise figure (NF), scalable output power, high gain, and stable operation over a large dynamic range. In this paper we report the design, performance, and simulation of two stage high-power 1952 nm hybrid single and double clad TDFAs. The first stage of our hybrid amplifier is a single clad design, and the second stage is a double clad design. We demonstrate TDFAs with an output power greater than 20 W with single-frequency narrow linewidth (i.e. MHz) input signals at both 1952 and 2004 nm. An optical 10 dB bandwidth of 80 nm is derived from the ASE spectrum. The power stage is constructed with 10 μm core active fibers showing a maximum optical slope efficiency greater than 50 %. The experimental results lead to a 1 dB agreement with our simulation tool developed for single clad and double clad TDFAs. Overall this hybrid amplifier offers versatile features with the potential of much higher output power.
Solid-state X-band Combiner Study
NASA Technical Reports Server (NTRS)
Pitzalis, O., Jr.; Russell, K. J.
1979-01-01
The feasibility of developing solid-state amplifiers at 4 and 10 GHz for application in spacecraft altimeters was studied. Bipolar-transistor, field-effect-transistor, and Impatt-diode amplifier designs based on 1980 solid-state technology are investigated. Several output power levels of the pulsed, low-duty-factor amplifiers are considered at each frequency. Proposed transistor and diode amplifier designs are illustrated in block diagrams. Projections of size, weight, and primary power requirements are given for each design.
Bilenca, A; Yun, S H; Tearney, G J; Bouma, B E
2006-03-15
Recent results have demonstrated unprecedented wavelength-tuning speed and repetition rate performance of semiconductor ring lasers incorporating scanning filters. However, several unique operational characteristics of these lasers have not been adequately explained, and the lack of an accurate model has hindered optimization. We numerically investigated the characteristics of these sources, using a semiconductor optical amplifier (SOA) traveling-wave Langevin model, and found good agreement with experimental measurements. In particular, we explored the role of the SOA refractive-index nonlinearities in determining the intracavity frequency-shift-broadening and the emitted power dependence on scan speed and direction. Our model predicts both continuous-wave and pulse operation and shows a universal relationship between the output power of lasers that have different cavity lengths and the filter peak frequency shift per round trip, therefore revealing the advantage of short cavities for high-speed biomedical imaging.
Potential for unreliable interpretation of EEG recorded with microelectrodes.
Stacey, William C; Kellis, Spencer; Greger, Bradley; Butson, Christopher R; Patel, Paras R; Assaf, Trevor; Mihaylova, Temenuzhka; Glynn, Simon
2013-08-01
Recent studies in epilepsy, cognition, and brain machine interfaces have shown the utility of recording intracranial electroencephalography (iEEG) with greater spatial resolution. Many of these studies utilize microelectrodes connected to specialized amplifiers that are optimized for such recordings. We recently measured the impedances of several commercial microelectrodes and demonstrated that they will distort iEEG signals if connected to clinical EEG amplifiers commonly used in most centers. In this study we demonstrate the clinical implications of this effect and identify some of the potential difficulties in using microelectrodes. Human iEEG data were digitally filtered to simulate the signal recorded by a hybrid grid (two macroelectrodes and eight microelectrodes) connected to a standard EEG amplifier. The filtered iEEG data were read by three trained epileptologists, and high frequency oscillations (HFOs) were detected with a well-known algorithm. The filtering method was verified experimentally by recording an injected EEG signal in a saline bath with the same physical acquisition system used to generate the model. Several electrodes underwent scanning electron microscopy (SEM). Macroelectrode recordings were unaltered compared to the source iEEG signal, but microelectrodes attenuated low frequencies. The attenuated signals were difficult to interpret: all three clinicians changed their clinical scoring of slowing and seizures when presented with the same data recorded on different sized electrodes. The HFO detection algorithm was oversensitive with microelectrodes, classifying many more HFOs than when the same data were recorded with macroelectrodes. In addition, during experimental recordings the microelectrodes produced much greater noise as well as large baseline fluctuations, creating sharply contoured transients, and superimposed "false" HFOs. SEM of these microelectrodes demonstrated marked variability in exposed electrode surface area, lead fractures, and sharp edges. Microelectrodes should not be used with low impedance (<1 GΩ) amplifiers due to severe signal attenuation and variability that changes clinical interpretations. The current method of preparing microelectrodes can leave sharp edges and nonuniform amounts of exposed wire. Even when recorded with higher impedance amplifiers, microelectrode data are highly prone to artifacts that are difficult to interpret. Great care must be taken when analyzing iEEG from high impedance microelectrodes. Wiley Periodicals, Inc. © 2013 International League Against Epilepsy.
Log amplifier with pole-zero compensation
Brookshier, W.
1985-02-08
A logarithmic amplifier circuit provides pole-zero compensation for improved stability and response time over 6-8 decades of input signal frequency. The amplifer circuit includes a first operational amplifier with a first feedback loop which includes a second, inverting operational amplifier in a second feedstock loop. The compensated output signal is provided by the second operational amplifier with the log elements, i.e., resistors, and the compensating capacitors in each of the feedback loops having equal values so that each break point is offset by a compensating break point or zero.
Note: High precision measurements using high frequency gigahertz signals
NASA Astrophysics Data System (ADS)
Jin, Aohan; Fu, Siyuan; Sakurai, Atsunori; Liu, Liang; Edman, Fredrik; Pullerits, Tõnu; Öwall, Viktor; Karki, Khadga Jung
2014-12-01
Generalized lock-in amplifiers use digital cavities with Q-factors as high as 5 × 108 to measure signals with very high precision. In this Note, we show that generalized lock-in amplifiers can be used to analyze microwave (giga-hertz) signals with a precision of few tens of hertz. We propose that the physical changes in the medium of propagation can be measured precisely by the ultra-high precision measurement of the signal. We provide evidence to our proposition by verifying the Newton's law of cooling by measuring the effect of change in temperature on the phase and amplitude of the signals propagating through two calibrated cables. The technique could be used to precisely measure different physical properties of the propagation medium, for example, the change in length, resistance, etc. Real time implementation of the technique can open up new methodologies of in situ virtual metrology in material design.
Low-noise front-end electronics for detection of intermediate-frequency weak light signals
NASA Astrophysics Data System (ADS)
Lin, Cunbao; Yan, Shuhua; Du, Zhiguang; Wei, Chunhua; Wang, Guochao
2015-02-01
A novel low-noise front-end electronics was proposed for detection of light signals with intensity about 10 μW and frequency above 2.7 MHz. The direct current (DC) power supply, pre-amplifier and main-amplifier were first designed, simulated and then realized. Small-size components were used to make the power supply small, and the pre-amplifier and main-amplifier were the least capacitors to avoid the phase shift of the signals. The performance of the developed front-end electronics was verified in cross-grating diffraction experiments. The results indicated that the output peak-topeak noise of the +/-5 V DC power supply was about 2 mV, and the total output current was 1.25 A. The signal-to-noise ratio (SNR) of the output signal of the pre-amplifier was about 50 dB, and it increased to nearly 60 dB after the mainamplifier, which means this front-end electronics was especially suitable for using in the phase-sensitive and integrated precision measurement systems.
Investigation of an X-band gigawatt long pulse multi-beam relativistic klystron amplifier
DOE Office of Scientific and Technical Information (OSTI.GOV)
Liu, Zhenbang; Huang, Hua; Lei, Lurong
2015-09-15
To achieve a gigawatt-level long pulse radiation power in X-band, a multi-beam relativistic klystron amplifier is proposed and studied experimentally. By introducing 18 electron drift tubes and extended interaction cavities, the power capacity of the device is increased. A radiation power of 1.23 GW with efficiency of 41% and amplifier gain of 46 dB is obtained in the particle-in-cell simulation. Under conditions of a 10 Hz repeat frequency and an input RF power of 30 kW, a radiation power of 0.9 GW, frequency of 9.405 GHz, pulse duration of 105 ns, and efficiency of 30% is generated in the experiment, and the amplifier gain is aboutmore » 45 dB. Both the simulation and the experiment prove that the multi-beam relativistic klystron amplifier can generate a long pulse GW-level radiation power in X-band.« less
Acoustic emission intrusion detector
Carver, Donald W.; Whittaker, Jerry W.
1980-01-01
An intrusion detector is provided for detecting a forcible entry into a secured structure while minimizing false alarms. The detector uses a piezoelectric crystal transducer to sense acoustic emissions. The transducer output is amplified by a selectable gain amplifier to control the sensitivity. The rectified output of the amplifier is applied to a Schmitt trigger circuit having a preselected threshold level to provide amplitude discrimination. Timing circuitry is provided which is activated by successive pulses from the Schmitt trigger which lie within a selected time frame for frequency discrimination. Detected signals having proper amplitude and frequency trigger an alarm within the first complete cycle time of a detected acoustical disturbance signal.
Rogers, III, C. E.; Gould, P. L.
2016-02-01
Here, we describe a system for generating frequency-chirped and amplitude-shaped pulses on time scales from sub-nanosecond to ten nanoseconds. The system starts with cw diode-laser light at 780 nm and utilizes fiber-based electro-optical phase and intensity modulators, driven by an arbitrary waveform generator, to generate the shaped pulses. These pulses are subsequently amplified to several hundred mW with a tapered amplifier in a delayed double-pass configuration. Frequency chirps up to 5 GHz in 2 ns and pulse widths as short as 0.15 ns have been realized.
Rogers, C E; Gould, P L
2016-02-08
We describe a system for generating frequency-chirped and amplitude-shaped pulses on time scales from sub-nanosecond to ten nanoseconds. The system starts with cw diode-laser light at 780 nm and utilizes fiber-based electro-optical phase and intensity modulators, driven by an arbitrary waveform generator, to generate the shaped pulses. These pulses are subsequently amplified to several hundred mW with a tapered amplifier in a delayed double-pass configuration. Frequency chirps up to 5 GHz in 2 ns and pulse widths as short as 0.15 ns have been realized.
Low-noise cryogenic transmission line
NASA Technical Reports Server (NTRS)
Norris, D.
1987-01-01
New low-noise cryogenic input transmission lines have been developed for the Deep Space Network (DSN) at 1.668 GHz for cryogenically cooled Field Effect Transistors (FET) and High Electron Mobility Transistor (HEMT) amplifiers. These amplifiers exhibit very low noise temperatures of 5 K to 15 K, making the requirements for a low-noise input transmission line critical. Noise contribution to the total amplifier system from the low-noise line is less than 0.5 K for both the 1.668-GHz and 2.25-GHz FET systems. The 1.668-GHz input line was installed in six FET systems which were implemented in the DSN for the Venus Balloon Experiment. The 2.25-GHz input line has been implemented in three FET systems for the DSN 34-m HEF antennas, and the design is currently being considered for use at higher frequencies.
AC coupled three op-amp biopotential amplifier with active DC suppression.
Spinelli, E M; Mayosky, M A
2000-12-01
A three op-amps instrumentation amplifier (I.A) with active dc suppression is presented. dc suppression is achieved by means of a controlled floating source at the input stage, to compensate electrode and op-amps offset voltages. This isolated floating source is built around an optical-isolated device using a general-purpose optocoupler, working as a photovoltaic generator. The proposed circuit has many interesting characteristics regarding simplicity and cost, while preserving common mode rejection ratio (CMRR) and high input impedance characteristics of the classic three op-amps I.A. As an example, a biopotential amplifier with a gain of 80 dB, a lower cutoff frequency of 0.1 Hz, and a dc input range of +/- 8 mV was built and tested. Using general-purpose op-amps, a CMRR of 105 was achieved without trimmings.
Zheng, Jie; Ge, Chun; Wagner, Clark J; Lu, Meng; Cunningham, Brian T; Hewitt, J Darby; Eden, J Gary
2012-06-18
Continuous tuning over a 1.6 THz region in the near-infrared (842.5-848.6 nm) has been achieved with a hybrid ring/external cavity laser having a single, optically-driven grating reflector and gain provided by an injection-seeded semiconductor amplifier. Driven at 532 nm and incorporating a photonic crystal with an azobenzene overlayer, the reflector has a peak reflectivity of ~80% and tunes at the rate of 0.024 nm per mW of incident green power. In a departure from conventional ring or external cavity lasers, the frequency selectivity for this system is provided by the passband of the tunable photonic crystal reflector and line narrowing in a high gain amplifier. Sub - 0.1 nm linewidths and amplifier extraction efficiencies above 97% are observed with the reflector tuned to 842.5 nm.
A multichannel EEG acquisition scheme based on single ended amplifiers and digital DRL.
Haberman, Marcelo Alejandro; Spinelli, Enrique Mario
2012-12-01
Single ended (SE) amplifiers allow implementing biopotential front-ends with a reduced number of parts, being well suited for preamplified electrodes or compact EEG headboxes. On the other hand, given that each channel has independent gain; mismatching between these gains results in poor common-mode rejection ratios (CMRRs) (about 30 dB considering 1% tolerance components). This work proposes a scheme for multichannel EEG acquisition systems based on SE amplifiers and a novel digital driven right leg (DDRL) circuit, which overcome the poor CMRR of the front-end stage providing a high common mode reduction at power line frequency (up to 80 dB). A functional prototype was built and tested showing the feasibility of the proposed technique. It provided EEG records with negligible power line interference, even in very aggressive EMI environments.
Amplifying modeling for broad bandwidth pulse in Nd:glass based on hybrid-broaden mechanism
NASA Astrophysics Data System (ADS)
Su, J.; Liu, L.; Luo, B.; Wang, W.; Jing, F.; Wei, X.; Zhang, X.
2008-05-01
In this paper, the cross relaxation time is proposed to combine the homogeneous and inhomogeneous broaden mechanism for broad bandwidth pulse amplification model. The corresponding velocity equation, which can describe the response of inverse population on upper and low energy level of gain media to different frequency of pulse, is also put forward. The gain saturation and energy relaxation effect are also included in the velocity equation. Code named CPAP has been developed to simulate the amplifying process of broad bandwidth pulse in multi-pass laser system. The amplifying capability of multi-pass laser system is evaluated and gain narrowing and temporal shape distortion are also investigated when bandwidth of pulse and cross relaxation time of gain media are different. Results can benefit the design of high-energy PW laser system in LFRC, CAEP.
NASA Technical Reports Server (NTRS)
Hu, Qing (Inventor)
2013-01-01
The present invention provides frequency tunable solid-state radiation-generating devices, such as lasers and amplifiers, whose active medium has a size in at least one transverse dimension (e.g., its width) that is much smaller than the wavelength of radiation generated and/or amplified within the active medium. In such devices, a fraction of radiation travels as an evanescent propagating mode outside the active medium. It has been discovered that in such devices the radiation frequency can be tuned by the interaction of a tuning mechanism with the propagating evanescent mode.
Varona, Omar de; Steinke, Michael; Neumann, Jörg; Kracht, Dietmar
2018-06-01
Emerging applications, such as gravitational wave astronomy, demand single-frequency lasers with diffraction-limited emission at 1.5 μm. Fiber amplifiers have greatly evolved to fulfill these requirements. Hundreds of watts are feasible using large-mode-area and specialty fibers. However, their application in a few watts to tens of watts in monolithic systems is unnecessarily complex due to the poor commercial availability of fiber components and standard integration procedures. In this Letter we propose and experimentally demonstrate a novel and simple method to amplify single-frequency signals at 1.5 μm up to tens of watts by core-pumping single-mode Er 3+ :Yb 3+ fiber amplifiers at 1018 nm. The proof-of-principle system is tested with different active fibers, lengths, and seed power levels. Over 11 W with an efficiency of more than 48% versus launched power is achieved. Additionally, performance degradation during operation was observed for which photodarkening due to P1 defects might be an explanation.
UHF FM receiver having improved frequency stability and low RFI emission
Lupinetti, Francesco
1990-02-27
A UHF receiver which converts UHF modulated carrier signals to baseband video signals without any heterodyne or frequency conversion stages. A bandpass filter having a fixed frequency first filters the signals. A low noise amplifier amplifies the filtered signal and applies the signal through further amplification stages to a limited FM demodulator circuit. The UHF signal is directly converted to a baseband video signal. The baseband video signal is clamped by a clamping circuit before driving a monitor. Frequency stability for the receivers is at a theoretical maximum, and interference to adjacent receivers is eliminated due to the absence of a local oscillator.
Optimal Design of a Traveling-Wave Kinetic Inductance Amplifier Operated in Three-Wave Mixing Mode
NASA Astrophysics Data System (ADS)
Erickson, Robert; Bal, Mustafa; Ku, Ksiang-Sheng; Wu, Xian; Pappas, David
In the presence of a DC bias, an injected pump, of frequency fP, and a signal, of frequency fS, undergo parametric three-way mixing (3WM) within a traveling-wave kinetic inductance (KIT) amplifier, producing an idler product of frequency fI =fP -fS . Periodic frequency stops are engineered into the coplanar waveguide of the device to enhance signal amplification. With fP placed just above the first frequency stop gap, 3WM broadband signal gain is achieved with maximum gain at fS =fP / 2 . Within a theory of the dispersion of traveling waves in the presence of these engineered loadings, which accounts for this broadband signal gain, we show how an optimal frequency-stop design may be constructed to achieve maximum signal amplification. The optimization approach we describe can be applied to the design of other nonlinear traveling-wave parametric amplifiers. This work was supported by the Army Research Office and the Laboratory for Physical Sciences under EAO221146, EAO241777, and the NIST Quantum Initiative. RPE acknowledges Grant 60NANB14D024 from the US Department of Commerce, NIST.
High-power broadband plasma maser with magnetic self-insulation
NASA Astrophysics Data System (ADS)
Litvin, Vitaliy O.; Loza, Oleg T.
2018-01-01
Presented in this paper are the results of a particle-in-cell modelling of a novel high-power microwave (HPM) source which combines the properties of two devices. The first prototype is a magnetically insulated transmission line oscillator (MILO), an HPM self-oscillator which does not need an external magnetic field and irradiates a narrow spectrum depending on its iris-loaded slow-wave structure. The second prototype is a plasma maser, a Cherenkov HPM amplifier driven by a high-current relativistic electron beam propagating in a strong external magnetic field in plasma which acts as a slow-wave structure. The radiation frequency of plasma masers mainly depends on an easily variable plasma concentration; hence, their spectrum may overlap a few octaves. The plasma-based HPM device described in this paper operates without an external magnetic field: it looks like an MILO in which the iris-loaded slow-wave structure is substituted by a hollow plasma tube. The small pulse duration of ˜1.5 ns prevents a feedback rise in the 20-cm long generation section so that the device operates as a noise amplifier. Unlike conventional ultra wideband generators, the spectrum depends not only on the pulse duration but mainly on plasma, so the operation frequency of the device ranges within 12 GHz. For irradiated frequencies above 2 GHz, the total pulse energy efficiency of 7% is demonstrated at the HPM power level ˜1 GW.
Integration & Validation of LCU with Different Sub-systems for Diacrode based amplifier
NASA Astrophysics Data System (ADS)
Rajnish, Kumar; Verma, Sriprakash; Soni, Dipal; Patel, Hriday; Suthar, Gajendra; Dalicha, Hrushikesh; Dhola, Hitesh; Patel, Amit; Upadhayay, Dishang; Jha, Akhil; Patel, Manoj; Trivedi, Rajesh; Machchhar, Harsha; Singh, Raghuraj; Mukherjee, Aparajita
2017-04-01
ITER-India is responsible to deliver nine (8+1 spare) ICH & CD Power Sources to ITER. Each power source is capable to deliver 2.5 MW at 35 to 65 MHz frequency range with a load condition up to VSWR 2:1. For remote operation of different subsystems, Local Control Unit (LCU) is developed. LCU is developed using PXI hardware and Schneider PLC with Lab VIEW-RT developmental environment. All the protection function of the amplifier is running on PXI 7841 R module that ensures hard wired protection logic. There are three level of protection function- first by power supply itself that detects overcurrent/overvoltage and trips itself and generate trip signal for further action. There are some direct hardwired signal interfaces between power supplies to protect the amplifier. Second level of protection is generated through integrated controller of amplifier i.e. Command Control Embedded (CCE) against arc and Anode over current. Third level of Protection is through LCU where different fault signals are received and processed to generate off command for different sub-systems. Before connecting different subsystem with High power RF amplifiers (Driver & Final stage), each subsystem is individually tested through LCU. All protection functions are tested before hooking up the subsystems with main amplifier and initiating RF operation.
NASA Astrophysics Data System (ADS)
Zhang, Wei; Ju, Jinchuan; Zhang, Jun; Zhong, Huihuang
2017-12-01
To achieve GW-level amplification output radiation at the X-band, a relativistic triaxial klystron amplifier with two-stage cascaded double-gap bunching cavities is investigated. The input cavity is optimized to obtain a high absorption rate of the external injection microwave. The cascaded bunching cavities are optimized to achieve a high depth of the fundamental harmonic current. A double-gap standing wave extractor is designed to improve the beam wave conversion efficiency. Two reflectors with high reflection coefficients both to the asymmetric mode and the TEM mode are employed to suppress the asymmetric mode competition and TEM mode microwave leakage. Particle-in-cell simulation results show that a high power microwave with a power of 2.53 GW and a frequency of 8.4 GHz is generated with a 690 kV, 9.3 kA electron beam excitation and a 25 kW seed microwave injection. Particularly, the achieved power conversion efficiency is about 40%, and the gain is as high as 50 dB. Meanwhile, there is insignificant self-excitation of the parasitic mode in the proposed structure by adopting the reflectors. The relative phase difference between the injected signals and the output microwaves keeps locked after the amplifier becomes saturated.
NASA Technical Reports Server (NTRS)
Simons, Rainee N.; Wintucky, Edwin G.; Wilson, Jeffrey D.; Force, Dale A.
2009-01-01
In the 2008 International Microwave Symposium (IMS) Digest version of our paper, recent advances in high power and efficiency space traveling-wave tube amplifiers (TWTAs) for NASA s space-to-Earth communications are presented. The RF power and efficiency of a new K-Band amplifier are 40 W and 50 percent and that of a new Ka-Band amplifier are 200 W and 60 percent. An important figure-of-merit, which is defined as the ratio of the RF power output to the mass (W/kg) of a TWT, has improved by a factor of ten over the previous generation Ka-Band devices. In this extended paper, a high power, high efficiency Ka-band combiner for multiple TWTs, based on a novel hybrid magic-T waveguide circuit design, is presented. The measured combiner efficiency is as high as 90 percent. In addition, at the design frequency of 32.05 GHz, error-free uncoded BPSK/QPSK data transmission at 8 megabits per second (Mbps), which is typical for deep space communications is demonstrated. Furthermore, QPSK data transmission at 622 Mbps is demonstrated with a low bit error rate of 2.4x10(exp -8), which exceeds the deep space state-of-the-art data rate transmission capability by more than two orders of magnitude. A potential application of the TWT combiner is in deep space communication systems for planetary exploration requiring transmitter power on the order of a kilowatt or higher.
Analog circuit for the measurement of phase difference between two noisy sine-wave signals
NASA Technical Reports Server (NTRS)
Shakkottai, P.; Kwack, E. Y.; Back, L. H.
1989-01-01
A simple circuit was designed to measure the phase difference between two noisy sine waves. It locks over a wide range of frequencies and produces an output proportional to the phase difference of rapidly varying signals. A square wave locked in frequency and phase to the first signal is produced by a phase-locked loop and is amplified by an operational amplifier.
338-GHz Semiconductor Amplifier Module
NASA Technical Reports Server (NTRS)
Samoska, Lorene A.; Gaier, Todd C.; Soria, Mary M.; Fung, King Man; Rasisic, Vesna; Deal, William; Leong, Kevin; Mei, Xiao Bing; Yoshida, Wayne; Liu, Po-Hsin;
2010-01-01
Research findings were reported from an investigation of new gallium nitride (GaN) monolithic millimeter-wave integrated circuit (MMIC) power amplifiers (PAs) targeting the highest output power and the highest efficiency for class-A operation in W-band (75-110 GHz). W-band PAs are a major component of many frequency multiplied submillimeter-wave LO signal sources. For spectrometer arrays, substantial W-band power is required due to the passive lossy frequency multipliers.
NASA Technical Reports Server (NTRS)
Miranda, Felix A.
2015-01-01
This presentation will discuss research and technology development work at the NASA Glenn Research Center in advanced frequency communications in support of NASAs mission. An overview of the work conducted in-house and also in collaboration with academia, industry, and other government agencies (OGA) in areas such as antenna technology, power amplifiers, radio frequency (RF) wave propagation through Earths atmosphere, ultra-sensitive receivers, among others, will be presented. In addition, the role of these and other related RF technologies in enabling the NASA next generation space communications architecture will be also discussed.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Grigorievsky, V I; Tezadov, Ya A
2016-03-31
The reported study is aimed at increasing the power in the transmission path of a lidar with Raman amplification for longpath sensing of methane by optimising the frequency-modulated characteristics of the output radiation. The pump current of the used distributed-feedback master laser was modulated by a linearfrequency signal with simultaneous application of a non-synchronous high-frequency signal. For such a modulation regime, the Raman amplifier provided the mean output power of 2.5 W at a wavelength of 1650 nm. The spectral broadening did not significantly decrease the lidar sensitivity at long paths. (lidars)
A Mathematical Model of a Simple Amplifier Using a Ferroelectric Transistor
NASA Technical Reports Server (NTRS)
Sayyah, Rana; Hunt, Mitchell; MacLeod, Todd C.; Ho, Fat D.
2009-01-01
This paper presents a mathematical model characterizing the behavior of a simple amplifier using a FeFET. The model is based on empirical data and incorporates several variables that affect the output, including frequency, load resistance, and gate-to-source voltage. Since the amplifier is the basis of many circuit configurations, a mathematical model that describes the behavior of a FeFET-based amplifier will help in the integration of FeFETs into many other circuits.
Effects of BOX engineering on analogue/RF and circuit performance of InGaAs-OI-Si MOSFET
NASA Astrophysics Data System (ADS)
Maity, Subir Kr.; Pandit, Soumya
2017-11-01
InGaAs is an attractive choice as alternate channel material in n-channel metal oxide semiconductor transistor for high-performance applications. However, electrostatic integrity of such device is poor. In this paper, we present a comprehensive technology computer-aided design simulation-based study of the effect of scaling the thickness of the buried oxide (BOX) region and varying the dielectric constant of BOX material on the electrostatic integrity, analogue/radio frequency (RF) performance and circuit performance of InGaAs-on-Insulator device. Device with thin BOX layer gives better drain-induced barrier lowering performance which enhances output resistance. The carrier mobility remains almost constant with thinning of BOX layer up to certain value. By lowering the dielectric constant of the BOX material, it is further possible to improve the analogue and RF performance. Effect of BOX thickness scaling and role of BOX dielectric material on gain-frequency response of common source amplifier is also studied. It is observed that frequency response of the amplifier improves for thin BOX and with low dielectric constant-based material.
NASA Astrophysics Data System (ADS)
Jiang, Feng-Ying; Wang, Ning; Jin, Yi-Rong; Deng, Hui; Tian, Ye; Lang, Pei-Lin; Li, Jie; Chen, Ying-Fei; Zheng, Dong-Ning
2013-04-01
We carry out an ultra-low-field nuclear magnetic resonance (NMR) experiment based on high-Tc superconducting quantum interference devices (SQUIDs). The measurement field is in a micro-tesla range (~10 μT-100 μT) and the experiment is conducted in a home-made magnetically-shielded-room (MSR). The measurements are performed by the indirect coupling method in which the signal of nuclei precession is indirectly coupled to the SQUID through a tuned copper coil transformer. In such an arrangement, the interferences of applied measurement and polarization field to the SQUID sensor are avoided and the performance of the SQUID is not destroyed. In order to compare the detection sensitivity obtained by using the SQUID with that achieved using a conventional low-noise-amplifier, we perform the measurements using a commercial room temperature amplifier. The results show that in a wide frequency range (~1 kHz-10 kHz) the measurements with the SQUID sensor exhibit a higher signal-to-noise ratio. Further, we discuss the dependence of NMR peak magnitude on measurement frequency. We attribute the reduction of the peak magnitude at high frequency to the increased field inhomogeneity as the measurement field increases. This is verified by compensating the field gradient using three sets of gradient coils.
NASA Astrophysics Data System (ADS)
Arani, Arvin; Eskandari, Amiraslan; Ouyang, Puren; Chopra, Rajiv
2017-08-01
Piezoceramic actuators are capable of precise positioning with high force, but suffer from limited displacement range, which has hindered their application in the field of magnetic resonance elastography (MRE). The objective of this study was to investigate the feasibility of using a mechanical amplifier in combination with a piezoceramic actuator for the application of endorectal prostate MRE. A five-bar symmetric structure was designed in ANSYS® and manufactured out of brass. Laser vibrometer measurements were used to characterize the amplitude of the CMA actuator while attached to masses in the 0-325 g range and over operating frequencies of 90-500 Hz. The response of the CMA was investigated while mechanically coupled to a balloon type endorectal coil. The resonant frequency of the prototype CMA actuator was predicted within 10% error using ANSYS simulations. The amplification ratio of the CMA actuator was measured to be 10 with the laser vibrometer and 7.6 ± 1.7 (max: 9.2, min: 6.5) using MRE, at a vibration frequency of 200 Hz. Laser vibrometer data also showed that the CMA actuator’s performance did not change whether it was connected to an empty or inflated endorectal. The feasibility of performing endorectal prostate MRE with a CMA actuator was successfully demonstrated in a human volunteer.
Towards a THz backward wave amplifier in European OPTHER project
NASA Astrophysics Data System (ADS)
Dispenza, M.; Brunetti, F.; Cojocaru, C.-S.; de Rossi, A.; Di Carlo, A.; Dolfi, D.; Durand, A.; Fiorello, A. M.; Gohier, A.; Guiset, P.; Kotiranta, M.; Krozer, V.; Legagneux, P.; Marchesin, R.; Megtert, S.; Bouamrane, F.; Mineo, M.; Paoloni, C.; Pham, K.; Schnell, J. P.; Secchi, A.; Tamburri, E.; Terranova, M. L.; Ulisse, G.; Zhurbenko, V.
2010-10-01
Within the EC funded international project OPTHER (OPtically Driven TeraHertz AmplifiERs) a considerable technological effort is being undertaken, in terms of technological development, THz device design and integration. The ultimate goal is to develop a miniaturised THz amplifier based on vacuum-tube principles The main target specifications of the OPTHER amplifier are the following: - Operating frequency: in the band 0.3 to 2 THz - Output power: > 10 mW ( 10 dBm ) - Gain: 10 to 20 dB. The project is in the middle of its duration. Design and simulations have shown that these targets can be met with a proper device configuration and careful optimization of the different parts of the amplifier. Two parallel schemes will be employed for amplifier realisation: THz Drive Signal Amplifier and Optically Modulated Beam THz Amplifier.
Recent progress on monolithic fiber amplifiers for next generation of gravitational wave detectors
NASA Astrophysics Data System (ADS)
Wellmann, Felix; Booker, Phillip; Hochheim, Sven; Theeg, Thomas; de Varona, Omar; Fittkau, Willy; Overmeyer, Ludger; Steinke, Michael; Weßels, Peter; Neumann, Jörg; Kracht, Dietmar
2018-02-01
Single-frequency fiber amplifiers in MOPA configuration operating at 1064 nm (Yb3+) and around 1550 nm (Er3+ or Er3+:Yb3+) are promising candidates to fulfill the challenging requirements of laser sources of the next generation of interferometric gravitational wave detectors (GWDs). Most probably, the next generation of GWDs is going to operate not only at 1064 nm but also at 1550 nm to cover a broader range of frequencies in which gravitational waves are detectable. We developed an engineering fiber amplifier prototype at 1064 nm emitting 215 W of linearly-polarized light in the TEM00 mode. The system consists of three modules: the seed source, the pre-amplifier, and the main amplifier. The modular design ensures reliable long-term operation, decreases system complexity and simplifies repairing and maintenance procedures. It also allows for the future integration of upgraded fiber amplifier systems without excessive downtimes. We also developed and characterized a fiber amplifier prototype at around 1550 nm that emits 100 W of linearly-polarized light in the TEM00 mode. This prototype uses an Er3+:Yb3+ codoped fiber that is pumped off-resonant at 940 nm. The off-resonant pumping scheme improves the Yb3+-to-Er3+ energy transfer and prevents excessive generation of Yb3+-ASE.
Laughing Rats? Playful Tickling Arouses High-Frequency Ultrasonic Chirping in Young Rodents
ERIC Educational Resources Information Center
Panksepp, Jaak; Burgdorf, Jeffrey
2010-01-01
In this reprint of a seminal article, once considered quite controversial, the authors discuss their radical claim that rats laugh. Even more provocative, the authors found that this rat-joy sound, especially evident during play, could be amplified dramatically by what they formally call heterospecific (cross-species) handplay (tickling). The…
Inferior Frontal Sensitivity to Common Speech Sounds Is Amplified by Increasing Word Intelligibility
ERIC Educational Resources Information Center
Vaden, Kenneth I., Jr.; Kuchinsky, Stefanie E.; Keren, Noam I.; Harris, Kelly C.; Ahlstrom, Jayne B.; Dubno, Judy R.; Eckert, Mark A.
2011-01-01
The left inferior frontal gyrus (LIFG) exhibits increased responsiveness when people listen to words composed of speech sounds that frequently co-occur in the English language (Vaden, Piquado, & Hickok, 2011), termed high phonotactic frequency (Vitevitch & Luce, 1998). The current experiment aimed to further characterize the relation of…
Silicon Carbide MOSFET-Based Switching Power Amplifier for Precision Magnet Control
NASA Astrophysics Data System (ADS)
Miller, Kenneth; Ziemba, Timothy; Prager, James; Picard, Julian
2016-10-01
Eagle Harbor Technologies, Inc. (EHT) is using the latest in solid-state switching technologies to advance the state-of-the-art in magnet control for fusion science. Silicon carbide (SiC) MOSFETs offer advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. To validate the design, EHT has developed a low-power switching power amplifier (SPA), which has been used for precision control of magnetic fields, including rapidly changing the fields in coils. This design has been incorporated in to a high power SPA, which has been bench tested. This high power SPA will be tested at the Helicity Injected Torus (HIT) at the University of Washington. Following successful testing, EHT will produce enough SiC MOSFET-based SPAs to replace all of the units at HIT, which allows for higher frequency operation and an overall increase in pulsed current levels.
NASA Astrophysics Data System (ADS)
Shi, Wei; Fang, Qiang; Fan, Jingli; Cui, Xuelong; Zhang, Zhuo; Li, Jinhui; Zhou, Guoqing
2017-02-01
We report a single frequency, linearly polarized, near diffraction-limited, pulsed laser source at 775 nm by frequency doubling a single frequency nanosecond pulsed all fiber based master oscillator-power amplifier, seeded by a fiber coupled semiconductor DFB laser diode at 1550 nm. The laser diode was driven by a pulsed laser driver to generate 5 ns laser pulses at 260 Hz repetition rate with 50 pJ pulse energy. The pulse energy was boosted to 200 μJ using two stages of core-pumped fiber amplifiers and two stages of cladding-pumped fiber amplifiers. The multi-stage synchronous pulse pumping technique was adopted in the four stages of fiber amplifiers to mitigate the ASE. The frequency doubling is implemented in a single pass configuration using a periodically poled lithium niobate (PPLN) crystal. The crystal is 3 mm long, 1.4 mm wide, 1 mm thick, with a 19.36 μm domain period chosen for quasi-phase matching at 33°C. It was AR coated at both 1550 nm and 775 nm. The maximum pulse energy of 97 μJ was achieved when 189 μJ fundamental laser was launched. The corresponding conversion efficiency is about 51.3%. The pulse duration was measured to be 4.8 ns. So the peak power of the generated 775 nm laser pulses reached 20 kW. To the best of our knowledge, this is the first demonstration of a 100 μJ-level, tens of kilowatts-peak-power-level single frequency linearly polarized 775 nm laser based on the frequency doubling of the fiber lasers.
Analysis and design of a class-D amplifier
NASA Technical Reports Server (NTRS)
1968-01-01
Analysis of a basic class-D amplifier circuit configuration shows its adaptability to a variety of applications. The feedback, input and output configuration and the frequency spectrum of the pulse-width-modulated signal are analyzed.
NASA Astrophysics Data System (ADS)
Agawa, Kenichi; Ishizuka, Shinichiro; Majima, Hideaki; Kobayashi, Hiroyuki; Koizumi, Masayuki; Nagano, Takeshi; Arai, Makoto; Shimizu, Yutaka; Maki, Asuka; Urakawa, Go; Terada, Tadashi; Itoh, Nobuyuki; Hamada, Mototsugu; Fujii, Fumie; Kato, Tadamasa; Yoshitomi, Sadayuki; Otsuka, Nobuaki
A 2.4GHz 0.13µm CMOS transceiver LSI, supporting Bluetooth V2.1 + enhanced data rate (EDR) standard, has achieved a high reception sensitivity and high-quality transmission signals between -40°C and +90°C. A low-IF receiver and direct-conversion transmitter architecture are employed. A temperature compensated receiver chain including a low-noise amplifier accomplishes a sensitivity of -90dBm at frequency shift keying modulation even in the worst environmental condition. Design optimization of phase noise in a local oscillator and linearity of a power amplifier improves transmission signals and enables them to meet Bluetooth radio specifications. Fabrication in scaled 0.13µm CMOS and operation at a low supply voltage of 1.5V result in small area and low power consumption.
Brennan, Marc A; Lewis, Dawna; McCreery, Ryan; Kopun, Judy; Alexander, Joshua M
2017-10-01
Nonlinear frequency compression (NFC) can improve the audibility of high-frequency sounds by lowering them to a frequency where audibility is better; however, this lowering results in spectral distortion. Consequently, performance is a combination of the effects of increased access to high-frequency sounds and the detrimental effects of spectral distortion. Previous work has demonstrated positive benefits of NFC on speech recognition when NFC is set to improve audibility while minimizing distortion. However, the extent to which NFC impacts listening effort is not well understood, especially for children with sensorineural hearing loss (SNHL). To examine the impact of NFC on recognition and listening effort for speech in adults and children with SNHL. Within-subject, quasi-experimental study. Participants listened to amplified nonsense words that were (1) frequency-lowered using NFC, (2) low-pass filtered at 5 kHz to simulate the restricted bandwidth (RBW) of conventional hearing aid processing, or (3) low-pass filtered at 10 kHz to simulate extended bandwidth (EBW) amplification. Fourteen children (8-16 yr) and 14 adults (19-65 yr) with mild-to-severe SNHL. Participants listened to speech processed by a hearing aid simulator that amplified input signals to fit a prescriptive target fitting procedure. Participants were blinded to the type of processing. Participants' responses to each nonsense word were analyzed for accuracy and verbal-response time (VRT; listening effort). A multivariate analysis of variance and linear mixed model were used to determine the effect of hearing-aid signal processing on nonsense word recognition and VRT. Both children and adults identified the nonsense words and initial consonants better with EBW and NFC than with RBW. The type of processing did not affect the identification of the vowels or final consonants. There was no effect of age on recognition of the nonsense words, initial consonants, medial vowels, or final consonants. VRT did not change significantly with the type of processing or age. Both adults and children demonstrated improved speech recognition with access to the high-frequency sounds in speech. Listening effort as measured by VRT was not affected by access to high-frequency sounds. American Academy of Audiology
Gender and vocal production mode discrimination using the high frequencies for speech and singing
Monson, Brian B.; Lotto, Andrew J.; Story, Brad H.
2014-01-01
Humans routinely produce acoustical energy at frequencies above 6 kHz during vocalization, but this frequency range is often not represented in communication devices and speech perception research. Recent advancements toward high-definition (HD) voice and extended bandwidth hearing aids have increased the interest in the high frequencies. The potential perceptual information provided by high-frequency energy (HFE) is not well characterized. We found that humans can accomplish tasks of gender discrimination and vocal production mode discrimination (speech vs. singing) when presented with acoustic stimuli containing only HFE at both amplified and normal levels. Performance in these tasks was robust in the presence of low-frequency masking noise. No substantial learning effect was observed. Listeners also were able to identify the sung and spoken text (excerpts from “The Star-Spangled Banner”) with very few exposures. These results add to the increasing evidence that the high frequencies provide at least redundant information about the vocal signal, suggesting that its representation in communication devices (e.g., cell phones, hearing aids, and cochlear implants) and speech/voice synthesizers could improve these devices and benefit normal-hearing and hearing-impaired listeners. PMID:25400613
NASA Technical Reports Server (NTRS)
Wintucky, Edwin G.
2002-01-01
A power-efficient, miniature, easily manufactured, reservoir-type barium-dispenser thermionic cathode has been developed that offers the significant advantages of simultaneous high electron-emission current density (>2 A/sq cm) and very long life (>100,000 hr of continuous operation) when compared with the commonly used impregnated-type barium-dispenser cathodes. Important applications of this cathode are a wide variety of microwave and millimeter-wave vacuum electronic devices, where high output power and reliability (long life) are essential. We also expect it to enable the practical development of higher purveyance electron guns for lower voltage and more reliable device operation. The low cathode heater power and reduced size and mass are expected to be particularly beneficial in traveling-wave-tube amplifiers (TWTA's) for space communications, where future NASA mission requirements include smaller onboard spacecraft systems, higher data transmission rates (high frequency and output power) and greater electrical efficiency.
Development of Optical Parametric Amplifier for Lidar Measurements of Trace Gases on Earth and Mars
NASA Technical Reports Server (NTRS)
Numata, Kenji; Riris, Haris; Li, Steve; Wu, Stewart; Kawa, Stephen R.; Krainak, Michael; Abshire, James
2011-01-01
Trace gases in planetary atmospheres offer important clues as to the origins of the planet's hydrology, geology. atmosphere. and potential for biology. Wc report on the development effort of a nanosecond-pulsed optical parametric amplifier (OPA) for remote trace gas measurements for Mars and Earth. The OP A output light is single frequency with high spectral purity and is widely tunable both at 1600 nm and 3300 nm with an optical-optical conversion efficiency of approximately 40%. We demonstrated open-path atmospheric measurements ofCH4 (3291 nm and 1651 nm). CO2 (1573 nm), H20 (1652 nm) with this laser source.
Radio-frequency Bloch-transistor electrometer.
Zorin, A B
2001-04-09
A quantum electrometer is proposed which is based on charge modulation of the Josephson supercurrent in the Bloch transistor inserted in a superconducting ring. As this ring is inductively coupled to a high- Q resonance tank circuit, the variations of the charge on the transistor island are converted into variations of amplitude and phase of oscillations in the tank. These variations are amplified and then detected. At sufficiently low temperature of the tank the device sensitivity is determined by the energy resolution of the amplifier, that can be reduced down to the standard quantum limit of 1 / 2Planck's over 2pi. A "back-action-evading" scheme of subquantum limit measurements is proposed.
Gigawatt peak power generation in a relativistic klystron amplifier driven by 1 kW seed-power
NASA Astrophysics Data System (ADS)
Wu, Y.; Xie, H. Q.; Li, Z. H.; Zhang, Y. J.; Ma, Q. S.
2013-11-01
An S-band high gain relativistic klystron amplifier driven by kW-level RF power is proposed and studied experimentally. In the device, the RF lossy material is introduced to suppress higher mode excitation. An output power of 1.95 GW with a gain of 62.8 dB is obtained in the simulation. Under conditions of an input RF power of 1.38 kW, a microwave pulse with power of 1.9 GW, frequency of 2.86 GHz, and duration of 105 ns is generated in the experiment, and the corresponding gain is 61.4 dB.
AC instrumentation amplifier for bioimpedance measurements.
Pallás-Areny, R; Webster, J G
1993-08-01
We analyze the input impedance and CMRR requirements for an amplifier for bioimpedance measurements when considering the capacitive components of the electrode-skin contact impedance. We describe an ac-coupled instrumentation amplifier (IA) that, in addition to fulfilling those requirements, both provides interference and noise reduction, and yields a zero phase shift over a wide frequency band without using broadband op amps.
NASA Astrophysics Data System (ADS)
Charles, Christine; Liang, Wei; Raymond, Luke; Rivas-Davila, Juan; Boswell, Roderick W.
2017-08-01
A structurally supportive miniaturised low-weight (≤150 g) radiofrequency switch mode amplifier developed to power the small diameter Pocket Rocket electrothermal plasma micro-thruster called MiniPR is tested in vacuum conditions representative of space to demonstrate its suitability for use on nano-satellites such as `CubeSats'. Argon plasma characterisation is carried out by measuring the optical emission signal seen through the plenum window versus frequency (12.8-13.8 MHz) and the plenum cavity pressure increase (indicative of thrust generation from volumetric gas heating in the plasma cavity) versus power (1-15 Watts) with the amplifier operating at atmospheric pressure and a constant flow rate of 20 sccm. Vacuum testing is subsequently performed by measuring the operational frequency range of the amplifier as a function of gas flow rate. The switch mode amplifier design is finely tuned to the input impedance of the thruster ˜16 pF) to provide a power efficiency of 88 % at the resonant frequency and a direct feed to a low-loss (˜ 10 %) impedance matching network. This system provides successful plasma coupling at 1.54 Watts for all investigated flow rates (10-130 sccm) for cryogenic pumping speeds of the order of 6000 l.s^{-1} and a vacuum pressure of the order of ˜ 2x10^{-5} Torr during operation. Interestingly, the frequency bandwidth for which a plasma can be coupled increases from 0.04 to 0.4 MHz when the gas flow rate is increased, probably as a result of changes in the plasma impedance.
Design of a MEMS-Based Oscillator Using 180nm CMOS Technology
Roy, Sukanta; Ramiah, Harikrishnan; Reza, Ahmed Wasif; Lim, Chee Cheow; Ferrer, Eloi Marigo
2016-01-01
Micro-electro mechanical system (MEMS) based oscillators are revolutionizing the timing industry as a cost effective solution, enhanced with more features, superior performance and better reliability. The design of a sustaining amplifier was triggered primarily to replenish MEMS resonator’s high motion losses due to the possibility of their ‘system-on-chip’ integrated circuit solution. The design of a sustaining amplifier observing high gain and adequate phase shift for an electrostatic clamp-clamp (C-C) beam MEMS resonator, involves the use of an 180nm CMOS process with an unloaded Q of 1000 in realizing a fixed frequency oscillator. A net 122dBΩ transimpedance gain with adequate phase shift has ensured 17.22MHz resonant frequency oscillation with a layout area consumption of 0.121 mm2 in the integrated chip solution, the sustaining amplifier draws 6.3mW with a respective phase noise of -84dBc/Hz at 1kHz offset is achieved within a noise floor of -103dBC/Hz. In this work, a comparison is drawn among similar design studies on the basis of a defined figure of merit (FOM). A low phase noise of 1kHz, high figure of merit and the smaller size of the chip has accredited to the design’s applicability towards in the implementation of a clock generative integrated circuit. In addition to that, this complete silicon based MEMS oscillator in a monolithic solution has offered a cost effective solution for industrial or biomedical electronic applications. PMID:27391136
Transimpedance Amplifier for MEMS SAW Oscillator in 1.4GHz
NASA Astrophysics Data System (ADS)
Kamarudin, N.; Karim, J.; Hussin, H.
2018-03-01
This work is to design a transimpedance amplifier for MEMS SAW resonator to achieve low power consumption at desired frequency. A transimpedance amplifier is designed and characterized for MEMS SAW resonator in 0.18μm CMOS process. The transimpedance amplifier achieves gain is 31 dBΩ at 176°. The power consume by oscillator is 0.6mW at VDD 1.8V while phase noise at -133.97dBc/Hz at 10kHz.
Efficient two-stage dual-beam noncollinear optical parametric amplifier
NASA Astrophysics Data System (ADS)
Cheng, Yu-Hsiang; Gao, Frank Y.; Poulin, Peter R.; Nelson, Keith A.
2018-06-01
We have constructed a noncollinear optical parametric amplifier with two signal beams amplified in the same nonlinear crystal. This dual-beam design is more energy-efficient than operating two amplifiers in parallel. The cross-talk between two beams has been characterized and discussed. We have also added a second amplification stage to enhance the output of one of the arms, which is then frequency-doubled for ultraviolet generation. This single device provides two tunable sources for ultrafast spectroscopy in the ultraviolet and visible region.
High-power 266 nm ultraviolet generation in yttrium aluminum borate.
Liu, Qiang; Yan, Xingpeng; Gong, Mali; Liu, Hua; Zhang, Ge; Ye, Ning
2011-07-15
A yttrium aluminum borate [YAl(3)(BO(3))(4)] (YAB) crystal with UV cutoff wavelength of 165 nm is used as the nonlinear optical crystal for fourth harmonic generation. The fundamental frequency laser at 1064 nm from an Nd:YVO(4) master oscillator power amplifier laser was frequency doubled to 532 nm. Using the type I phase-matching YAB crystal, a 5.05 W average power 266 nm UV laser was obtained at the pulse repetition frequency of 65 kHz, corresponding to the conversion efficiency of 12.3% from 532 to 266 nm. The experimental results show great potential for the application of using YAB as a nonlinear optical crystal to get high-power fourth harmonic generation. © 2011 Optical Society of America
NASA Astrophysics Data System (ADS)
Whitelock, Hope; Bishop, Michael; Khosravi, Soroush; Obaid, Razib; Berrah, Nora
2016-05-01
A low dispersion frequency-resolved optical gating (FROG) spectrometer was designed to characterize ultrashort (<50 femtosecond) laser pulses from a commercial regenerative amplifier, optical parametric amplifier, and a home-built non-colinear optical parametric amplifier. This instrument splits a laser pulse into two replicas with a 90:10 intensity ratio using a thin pellicle beam-splitter and then recombines the pulses in a birefringent medium. The instrument detects a wavelength-sensitive change in polarization of the weak probe pulse in the presence of the stronger pump pulse inside the birefringent medium. Scanning the time delay between the two pulses and acquiring spectra allows for characterization of the frequency and time content of ultrafast laser pulses, that is needed for interpretation of experimental results obtained from these ultrafast laser systems. Funded by the DoE-BES, Grant No. DE-SC0012376.
Reghu, T; Mandloi, V; Shrivastava, Purushottam
2016-04-01
The design and development of a compact high voltage, high peak power, high frequency transformer for a converter type modulator of klystron amplifiers is presented. The transformer has been designed to operate at a frequency of 20 kHz and at a flux swing of ±0.6 T. Iron (Fe) based nanocrystalline material has been selected as a core for the construction of the transformer. The transformer employs a specially designed solid Teflon bobbin having 120 kV insulation for winding the high voltage secondary windings. The flux swing of the core has been experimentally found by plotting the hysteresis loop at actual operating conditions. Based on the design, a prototype transformer has been built which is per se a unique combination of high voltage, high frequency, and peak power specifications. The transformer was able to provide 58 kV (pk-pk) at the secondary with a peak power handling capability of 700 kVA. The transformation ratio was 1:17. The performance of the transformer is also presented and discussed.
A 220-GHz SIS Mixer Tightly Integrated With a Sub-Hundred-Microwatt SiGe IF Amplifier
NASA Astrophysics Data System (ADS)
Montazeri, Shirin; Grimes, Paul K.; Tong, Cheuk-Yu Edward; Bardin, Joseph C.
2016-01-01
Future kilopixel-scale heterodyne focal plane arrays based on superconductor-insulator-superconductor (SIS) mixers will require submilliwatt power consumption low-noise amplifiers (LNAs) which are tightly integrated with the mixers. In this paper, an LNA that is optimized for direct connection to a 220-GHz SIS mixer chip and requires less than 100 μW of dc power is reported. The amplifier design process is described, and measurement results are presented. It is shown that, when pumped at local oscillator frequencies between 214 and 226 GHz, the mixer/amplifier module achieves a double-sideband system noise temperature between 35 and 50 K over the 3.3-6 GHz IF frequency range while requiring just 90 μW of dc power. Moreover, the potential to further reduce the power consumption is explored and successful operation is demonstrated for LNA power consumption as low as 60 μW.
NASA Astrophysics Data System (ADS)
Krzempek, Karol; Sobon, Grzegorz; Sotor, Jaroslaw; Dudzik, Grzegorz; Abramski, Krzysztof M.
2014-10-01
We present a difference frequency generation based (DFG) mid-infrared (mid-IR) laser source using an all-polarization-maintaining-fiber (all-PM) amplifier capable of simultaneous amplification of 1064 nm and 1550 nm signals. The amplifier incorporates a single piece of a standard erbium:ytterbium (Er:Yb) co-doped double-clad (DC) active fiber and a limited number of off-the-shelf fiber-based components. Excited by a single 9 W multimode pump, the amplifier delivered over 12.1 dB and 17.8 dB gain at 1 µm and 1.55 µm, respectively. Due to an all-PM configuration, the amplifier was exceptionally convenient for DFG of mid-IR radiation in periodically polled lithium niobate (PPLN) crystal, yielding an output power of ~200 µW in a wide spectral range spanning from 3300 to 3470 nm.
Adaptive gain and filtering circuit for a sound reproduction system
NASA Technical Reports Server (NTRS)
Engebretson, A. Maynard (Inventor); O'Connell, Michael P. (Inventor)
1998-01-01
Adaptive compressive gain and level dependent spectral shaping circuitry for a hearing aid include a microphone to produce an input signal and a plurality of channels connected to a common circuit output. Each channel has a preset frequency response. Each channel includes a filter with a preset frequency response to receive the input signal and to produce a filtered signal, a channel amplifier to amplify the filtered signal to produce a channel output signal, a threshold register to establish a channel threshold level, and a gain circuit. The gain circuit increases the gain of the channel amplifier when the channel output signal falls below the channel threshold level and decreases the gain of the channel amplifier when the channel output signal rises above the channel threshold level. A transducer produces sound in response to the signal passed by the common circuit output.
Park, Jinhyoung; Hu, Changhong; Shung, K Kirk
2011-12-01
A stand-alone front-end system for high-frequency coded excitation imaging was implemented to achieve a wider dynamic range. The system included an arbitrary waveform amplifier, an arbitrary waveform generator, an analog receiver, a motor position interpreter, a motor controller and power supplies. The digitized arbitrary waveforms at a sampling rate of 150 MHz could be programmed and converted to an analog signal. The pulse was subsequently amplified to excite an ultrasound transducer, and the maximum output voltage level achieved was 120 V(pp). The bandwidth of the arbitrary waveform amplifier was from 1 to 70 MHz. The noise figure of the preamplifier was less than 7.7 dB and the bandwidth was 95 MHz. Phantoms and biological tissues were imaged at a frame rate as high as 68 frames per second (fps) to evaluate the performance of the system. During the measurement, 40-MHz lithium niobate (LiNbO(3)) single-element lightweight (<;0.28 g) transducers were utilized. The wire target measure- ment showed that the -6-dB axial resolution of a chirp-coded excitation was 50 μm and lateral resolution was 120 μm. The echo signal-to-noise ratios were found to be 54 and 65 dB for the short burst and coded excitation, respectively. The contrast resolution in a sphere phantom study was estimated to be 24 dB for the chirp-coded excitation and 15 dB for the short burst modes. In an in vivo study, zebrafish and mouse hearts were imaged. Boundaries of the zebrafish heart in the image could be differentiated because of the low-noise operation of the implemented system. In mouse heart images, valves and chambers could be readily visualized with the coded excitation.
The LiteBIRD Satellite Mission: Sub-Kelvin Instrument
NASA Astrophysics Data System (ADS)
Suzuki, A.; Ade, P. A. R.; Akiba, Y.; Alonso, D.; Arnold, K.; Aumont, J.; Baccigalupi, C.; Barron, D.; Basak, S.; Beckman, S.; Borrill, J.; Boulanger, F.; Bucher, M.; Calabrese, E.; Chinone, Y.; Cho, S.; Crill, B.; Cukierman, A.; Curtis, D. W.; de Haan, T.; Dobbs, M.; Dominjon, A.; Dotani, T.; Duband, L.; Ducout, A.; Dunkley, J.; Duval, J. M.; Elleflot, T.; Eriksen, H. K.; Errard, J.; Fischer, J.; Fujino, T.; Funaki, T.; Fuskeland, U.; Ganga, K.; Goeckner-Wald, N.; Grain, J.; Halverson, N. W.; Hamada, T.; Hasebe, T.; Hasegawa, M.; Hattori, K.; Hattori, M.; Hayes, L.; Hazumi, M.; Hidehira, N.; Hill, C. A.; Hilton, G.; Hubmayr, J.; Ichiki, K.; Iida, T.; Imada, H.; Inoue, M.; Inoue, Y.; Irwin, K. D.; Ishino, H.; Jeong, O.; Kanai, H.; Kaneko, D.; Kashima, S.; Katayama, N.; Kawasaki, T.; Kernasovskiy, S. A.; Keskitalo, R.; Kibayashi, A.; Kida, Y.; Kimura, K.; Kisner, T.; Kohri, K.; Komatsu, E.; Komatsu, K.; Kuo, C. L.; Kurinsky, N. A.; Kusaka, A.; Lazarian, A.; Lee, A. T.; Li, D.; Linder, E.; Maffei, B.; Mangilli, A.; Maki, M.; Matsumura, T.; Matsuura, S.; Meilhan, D.; Mima, S.; Minami, Y.; Mitsuda, K.; Montier, L.; Nagai, M.; Nagasaki, T.; Nagata, R.; Nakajima, M.; Nakamura, S.; Namikawa, T.; Naruse, M.; Nishino, H.; Nitta, T.; Noguchi, T.; Ogawa, H.; Oguri, S.; Okada, N.; Okamoto, A.; Okamura, T.; Otani, C.; Patanchon, G.; Pisano, G.; Rebeiz, G.; Remazeilles, M.; Richards, P. L.; Sakai, S.; Sakurai, Y.; Sato, Y.; Sato, N.; Sawada, M.; Segawa, Y.; Sekimoto, Y.; Seljak, U.; Sherwin, B. D.; Shimizu, T.; Shinozaki, K.; Stompor, R.; Sugai, H.; Sugita, H.; Suzuki, J.; Tajima, O.; Takada, S.; Takaku, R.; Takakura, S.; Takatori, S.; Tanabe, D.; Taylor, E.; Thompson, K. L.; Thorne, B.; Tomaru, T.; Tomida, T.; Tomita, N.; Tristram, M.; Tucker, C.; Turin, P.; Tsujimoto, M.; Uozumi, S.; Utsunomiya, S.; Uzawa, Y.; Vansyngel, F.; Wehus, I. K.; Westbrook, B.; Willer, M.; Whitehorn, N.; Yamada, Y.; Yamamoto, R.; Yamasaki, N.; Yamashita, T.; Yoshida, M.
2018-05-01
Inflation is the leading theory of the first instant of the universe. Inflation, which postulates that the universe underwent a period of rapid expansion an instant after its birth, provides convincing explanation for cosmological observations. Recent advancements in detector technology have opened opportunities to explore primordial gravitational waves generated by the inflation through "B-mode" (divergent-free) polarization pattern embedded in the cosmic microwave background anisotropies. If detected, these signals would provide strong evidence for inflation, point to the correct model for inflation, and open a window to physics at ultra-high energies. LiteBIRD is a satellite mission with a goal of detecting degree-and-larger-angular-scale B-mode polarization. LiteBIRD will observe at the second Lagrange point with a 400 mm diameter telescope and 2622 detectors. It will survey the entire sky with 15 frequency bands from 40 to 400 GHz to measure and subtract foregrounds. The US LiteBIRD team is proposing to deliver sub-Kelvin instruments that include detectors and readout electronics. A lenslet-coupled sinuous antenna array will cover low-frequency bands (40-235 GHz) with four frequency arrangements of trichroic pixels. An orthomode-transducer-coupled corrugated horn array will cover high-frequency bands (280-402 GHz) with three types of single frequency detectors. The detectors will be made with transition edge sensor (TES) bolometers cooled to a 100 milli-Kelvin base temperature by an adiabatic demagnetization refrigerator. The TES bolometers will be read out using digital frequency multiplexing with Superconducting QUantum Interference Device (SQUID) amplifiers. Up to 78 bolometers will be multiplexed with a single SQUID amplifier. We report on the sub-Kelvin instrument design and ongoing developments for the LiteBIRD mission.
Adaptive Injection-locking Oscillator Array for RF Spectrum Analysis
DOE Office of Scientific and Technical Information (OSTI.GOV)
Leung, Daniel
2011-04-19
A highly parallel radio frequency receiver using an array of injection-locking oscillators for on-chip, rapid estimation of signal amplitudes and frequencies is considered. The oscillators are tuned to different natural frequencies, and variable gain amplifiers are used to provide negative feedback to adapt the locking band-width with the input signal to yield a combined measure of input signal amplitude and frequency detuning. To further this effort, an array of 16 two-stage differential ring oscillators and 16 Gilbert-cell mixers is designed for 40-400 MHz operation. The injection-locking oscillator array is assembled on a custom printed-circuit board. Control and calibration is achievedmore » by on-board microcontroller.« less
Design and test of a tip-tilt driver for an image stabilization system
NASA Astrophysics Data System (ADS)
Casas, Albert; Gómez, José María.; Roma, David; Carmona, Manuel; López, Manel; Bosch, José; Herms, Atilù; Sabater, Josep; Volkmer, Reiner; Heidecke, Frank; Maue, Thorsten; Nakai, Eiji; Baumgartner, Jörg; Schmidt, Wolfgang
2016-08-01
The tip/tilt driver is part of the Polarimetric and Helioseismic Imager (PHI) instrument for the ESA Solar Orbiter (SO), which is scheduled to launch in 2017. PPHI captures polarimetric images from the Sun to better understand our nearest star, the Sun. The paper covers an analog amplifier design to drive capacitive solid state actuator such ass piezoelectric actuator. Due to their static and continuous operation, the actuator needs to be supplied by high-quality, low-frequency, high-voltage sinusoidal signals. The described circuit is an efficiency-improved Class-AB amplifier capable of recovering up to 60% of the charge stored in the actuator. The results obtained after the qualification model test demonstrate the feasibility of the circuit with the accomplishment of the requirements fixed by the scientific team.
A W-band integrated power module using MMIC MESFET power amplifiers and varactor doublers
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ho, T.C.; Chen, Seng Woon; Pande, K.
1993-12-01
A high-performance integrated power module using U-band MMIC MESFET power amplifiers in conjunction with W-band MMIC high efficiency varactor doublers has been developed for millimeter-wave system applications. This paper presents the design, fabrication, and performance of this W-band integrated power module. Measured results of the complete integrated power module show an output power of 90 mW with an overall associated gain of 29.5 dB at 94 GHz. A saturated power of over 95 mW was also achieved. These results represent the highest reported power and gain at W-band using MESFET and varactor frequency doubling technologies. This integrated power module ismore » suitable for the future 94 GHz missile seeker applications.« less
Phase-locked, erbium-fiber-laser-based frequency comb in the near infrared.
Washburn, Brian R; Diddams, Scott A; Newbury, Nathan R; Nicholson, Jeffrey W; Yan, Man F; Jørgensen, Carsten G
2004-02-01
A phase-locked frequency comb in the near infrared is demonstrated with a mode-locked, erbium-doped, fiber laser whose output is amplified and spectrally broadened in dispersion-flattened, highly nonlinear optical fiber to span from 1100 to >2200 nm. The supercontinuum output comprises a frequency comb with a spacing set by the laser repetition rate and an offset by the carrier-envelope offset frequency, which is detected with the standard f-to-2f heterodyne technique. The comb spacing and offset frequency are phase locked to a stable rf signal with a fiber stretcher in the laser cavity and by control of the pump laser power, respectively. This infrared comb permits frequency metrology experiments in the near infrared in a compact, fiber-laser-based system.
A Study of New Pulse Auscultation System
Chen, Ying-Yun; Chang, Rong-Seng
2015-01-01
This study presents a new type of pulse auscultation system, which uses a condenser microphone to measure pulse sound waves on the wrist, captures the microphone signal for filtering, amplifies the useful signal and outputs it to an oscilloscope in analog form for waveform display and storage and delivers it to a computer to perform a Fast Fourier Transform (FFT) and convert the pulse sound waveform into a heartbeat frequency. Furthermore, it also uses an audio signal amplifier to deliver the pulse sound by speaker. The study observed the principles of Traditional Chinese Medicine’s pulsing techniques, where pulse signals at places called “cun”, “guan” and “chi” of the left hand were measured during lifting (100 g), searching (125 g) and pressing (150 g) actions. Because the system collects the vibration sound caused by the pulse, the sensor itself is not affected by the applied pressure, unlike current pulse piezoelectric sensing instruments, therefore, under any kind of pulsing pressure, it displays pulse changes and waveforms with the same accuracy. We provide an acquired pulse and waveform signal suitable for Chinese Medicine practitioners’ objective pulse diagnosis, thus providing a scientific basis for this Traditional Chinese Medicine practice. This study also presents a novel circuit design using an active filtering method. An operational amplifier with its differential features eliminates the interference from external signals, including the instant high-frequency noise. In addition, the system has the advantages of simple circuitry, cheap cost and high precision. PMID:25875192
A study of new pulse auscultation system.
Chen, Ying-Yun; Chang, Rong-Seng
2015-04-14
This study presents a new type of pulse auscultation system, which uses a condenser microphone to measure pulse sound waves on the wrist, captures the microphone signal for filtering, amplifies the useful signal and outputs it to an oscilloscope in analog form for waveform display and storage and delivers it to a computer to perform a Fast Fourier Transform (FFT) and convert the pulse sound waveform into a heartbeat frequency. Furthermore, it also uses an audio signal amplifier to deliver the pulse sound by speaker. The study observed the principles of Traditional Chinese Medicine's pulsing techniques, where pulse signals at places called "cun", "guan" and "chi" of the left hand were measured during lifting (100 g), searching (125 g) and pressing (150 g) actions. Because the system collects the vibration sound caused by the pulse, the sensor itself is not affected by the applied pressure, unlike current pulse piezoelectric sensing instruments, therefore, under any kind of pulsing pressure, it displays pulse changes and waveforms with the same accuracy. We provide an acquired pulse and waveform signal suitable for Chinese Medicine practitioners' objective pulse diagnosis, thus providing a scientific basis for this Traditional Chinese Medicine practice. This study also presents a novel circuit design using an active filtering method. An operational amplifier with its differential features eliminates the interference from external signals, including the instant high-frequency noise. In addition, the system has the advantages of simple circuitry, cheap cost and high precision.
High energy 523 nm ND:YLF pulsed slab laser with novel pump beam waveguide design
NASA Astrophysics Data System (ADS)
Yang, Qi; Zhu, Xiaolei; Ma, Jian; Lu, Tingting; Ma, Xiuhua; Chen, Weibiao
2015-11-01
A laser diode pumped Nd:YLF master oscillator power amplifier (MOPA) green laser system with high pulse energy and high stable output is demonstrated. At a repetition rate of 50 Hz, 840 mJ pulse energy, 9.1 ns pulse width of 1047 nm infrared laser emitting is obtained from the MOPA system. The corresponding peak power is 93 MW. Extra-cavity frequency doubling with a LiB3O5 crystal, pulse energy of 520 mJ at 523 nm wavelength is achieved. The frequency conversion efficiency reaches up to 62%. The output pulse energy instability of the laser system is less than 0.6% for one hour.
Low-common-mode differential amplifier
NASA Technical Reports Server (NTRS)
Morrison, S.
1980-01-01
Outputs of differential amplifier are excellently matched in phase and amplitude over wide range of frequencies. Common mode feedback loop offsets differences between two signal paths. Possible applications of circuit are in oscilloscopes, integrated circuit logic tester, and other self contained instruments.
NASA Technical Reports Server (NTRS)
Chan, J. L.; Sun, C.
1983-01-01
The engineering development of a solid state transmitter amplifier operating in the 20 GHz frequency band. The development effort involved a variety of disciplines including IMPATT device development, circulator design, simple and multiple diode circuits designs, and amplifier integration and test.
An RF amplifier for ICRF studies in the LAPD
NASA Astrophysics Data System (ADS)
Martin, M. J.; Pribyl, P.; Gekelman, W.; Lucky, Z.
2015-12-01
An RF amplifier system was designed and is under construction at the UCLA Basic Plasma Science Facility. The system is designed to output 200 kW peak RMS power at 1% duty cycle with a 1 Hz rep rate at frequencies of 2-6 MHz. This paper describes the RF amplifier system with preliminary benchmarks. Current design challenges and future work are discussed.
5-fs, Multi-mJ, CEP-locked parametric chirped-pulse amplifier pumped by a 450-nm source at 1 kHz.
Adachi, S; Ishii, N; Kanai, T; Kosuge, A; Itatani, J; Kobayashi, Y; Yoshitomi, D; Torizuka, K; Watanabe, S
2008-09-15
We report on the development of an optical parametric chirpedpulse amplifier at a 1-kHz repetition rate with a 5.5-fs pulse duration, a 2.7-mJ pulse energy and carrier-envelope phase-control. The amplifier is pumped by a 450-nm pulse from a frequency-doubled Ti:sapphire laser.
Gain dynamics of clad-pumped Yb-fiber amplifier and intensity noise control.
Zhao, Jian; Guiraud, Germain; Floissat, Florian; Gouhier, Benoit; Rota-Rodrigo, Sergio; Traynor, Nicholas; Santarelli, Giorgio
2017-01-09
Gain dynamics study provides an attractive method to understand the intensity noise behavior in fiber amplifiers. Here, the gain dynamics of a medium power (5 W) clad-pumped Yb-fiber amplifier is experimentally evaluated by measuring the frequency domain transfer functions for the input seed and pump lasers from 10 Hz to 1 MHz. We study gain dynamic behavior of the fiber amplifier in the presence of significant residual pump power (compared to the seed power), showing that the seed transfer function is strongly saturated at low Fourier frequencies while the pump power modulation transfer function is nearly unaffected. The characterization of relative intensity noise (RIN) of the fiber amplifier is well explained by the gain dynamics analysis. Finally, a 600 kHz bandwidth feedback loop using an acoustic-optical modulator (AOM) controlling the seed intensity is successfully demonstrated to suppress the broadband laser intensity noise. A maximum noise reduction of about 30 dB is achieved leading to a RIN of -152 dBc/Hz (~1 kHz-10 MHz) at 2.5 W output power.
Thermal Investigation of Three-Dimensional GaN-on-SiC High Electron Mobility Transistors
2017-07-01
AFRL-RY-WP-TR-2017-0143 THERMAL INVESTIGATION OF THREE- DIMENSIONAL GaN-on-SiC HIGH ELECTRON MOBILITY TRANSISTORS Qing Hao The University of Arizona...To) July 2017 Final 08 April 2015 – 10 April 2017 4. TITLE AND SUBTITLE THERMAL INVESTIGATION OF THREE-DIMENSIONAL GaN-on-SiC HIGH ELECTRON MOBILITY...used in many DoD applications, including integrated radio frequency (RF) amplifiers and power electronics . However, inherent inefficiencies in
Continuous-time ΣΔ ADC with implicit variable gain amplifier for CMOS image sensor.
Tang, Fang; Bermak, Amine; Abbes, Amira; Benammar, Mohieddine Amor
2014-01-01
This paper presents a column-parallel continuous-time sigma delta (CTSD) ADC for mega-pixel resolution CMOS image sensor (CIS). The sigma delta modulator is implemented with a 2nd order resistor/capacitor-based loop filter. The first integrator uses a conventional operational transconductance amplifier (OTA), for the concern of a high power noise rejection. The second integrator is realized with a single-ended inverter-based amplifier, instead of a standard OTA. As a result, the power consumption is reduced, without sacrificing the noise performance. Moreover, the variable gain amplifier in the traditional column-parallel read-out circuit is merged into the front-end of the CTSD modulator. By programming the input resistance, the amplitude range of the input current can be tuned with 8 scales, which is equivalent to a traditional 2-bit preamplification function without consuming extra power and chip area. The test chip prototype is fabricated using 0.18 μm CMOS process and the measurement result shows an ADC power consumption lower than 63.5 μW under 1.4 V power supply and 50 MHz clock frequency.
Research on High-Intensity Picosecond Pump Laser in Short Pulse Optical Parametric Amplification
NASA Astrophysics Data System (ADS)
Pan, Xue; Peng, Yu-Jie; Wang, Jiang-Feng; Lu, Xing-Hua; Ouyang, Xiao-Ping; Chen, Jia-Lin; Jiang, You-En; Fan, Wei; Li, Xue-Chun
2013-01-01
A 527 nm pump laser generating 1.7 mJ energy with peak power of more than 0.12 GW is demonstrated. The theoretical simulation result shows that it has 106 gain in the picosecond-pump optical parametric chirped pulse amplification when the pump laser peak power is 0.1 GW and the intensity is more than 5 GW/cm2, and that it can limit the parametric fluorescence in the picosecond time scale of pump duration. The pump laser system adopts a master-oscillator power amplifier, which integrates a more than 30 pJ fiber-based oscillator with a 150 μJ regenerative amplifier and a relay-imaged four-pass diode-pump Nd glass amplifier to generate a 1 Hz top hat spatial beam and about 14 ps temporal Guassian pulse with <2% pulse-to-pulse energy stability. The output energy of the power amplifier is limited to 4 mJ for B-integral concern, and the frequency doubling efficiency can reach 65% with input intensity 10 GW/cm2.
Millimeter-Wave Gyroklystron Amplifier Experiment Using a Relativistic Electron Beam
1990-03-08
Qint to 400 for the TE1 l1 mode, while assisting in suppressing other competing modes [7]. The length of these slots is three times the nominal cavity...frequency by tranverse compression by means of separate clamps. However, cavity deformation affects both the center frequency and the value 5 of Q...amplifier operation was limited by the excitation of parasitic oscillation of the competing TE1 12 mode, as predicted by theory [7]. Despite this
Tests of Low-Noise MMIC Amplifier Module at 290 to 340 GHz
NASA Technical Reports Server (NTRS)
Gaier, Todd; Samoska, Lorene; Fung, King Man; Deal, William; Mei, Xiaobing; Lai, Richard
2009-01-01
A document presents data from tests of a low-noise amplifier module operating in the frequency range from 290 to 340 GHz said to be the highest-frequency low-noise, solid-state amplifier ever developed. The module comprised a three-stage monolithic microwave integrated circuit (MMIC) amplifier integrated with radial probe MMIC/waveguide transitions and contained in a compact waveguide package, all according to the concepts described in the immediately preceding article and in the referenced prior article, "Integrated Radial Probe Transition From MMIC to Waveguide" (NPO-43957), NASA Tech Briefs Vol. 31, No. 5 (May 2007), page 38. The tests included measurements by the Y-factor method, in which noise figures are measured repeatedly with an input noise source alternating between an "on" (hot-load) condition and an "off" (cold-load) condition. (The Y factor is defined as the ratio between the "on" and "off" noise power levels.) The test results showed that, among other things, the module exhibited a minimum noise figure of about 8.7 dB at 325 GHz and that the gain at that frequency under the bias conditions that produced the minimum noise figure was between about 9 and 10 dB.
Modeling of induction-linac based free-electron laser amplifiers
DOE Office of Scientific and Technical Information (OSTI.GOV)
Jong, R.A.; Fawley, W.M.; Scharlemann, E.T.
We describe the modeling of an induction-linac based free-electron laser (IFEL) amplifier for producing multimegawatt levels of microwave power. We have used the Lawrence Livermore National Laboratory (LLNL) free-electron laser simulation code, FRED, and the simulation code for sideband calculations, GINGER for this study. For IFEL amplifiers in the frequency range of interest (200 to 600 GHz), we have devised a wiggler design strategy which incorporates a tapering algorithm that is suitable for free-electron laser (FEL) systems with moderate space-charge effects and that minimizes spontaneous noise growth at frequencies below the fundamental, while enhancing the growth of the signal atmore » the fundamental. In addition, engineering design considerations of the waveguide wall loading and electron beam fill factor in the waveguide set limits on the waveguide dimensions, the wiggler magnet gap spacing, the wiggler period, and the minimum magnetic field strength in the tapered region of the wiggler. As an example, we shall describe an FEL amplifier designed to produce an average power of about 10 MW at a frequency of 280 GHz to be used for electron cyclotron resonance heating of tokamak fusion devices. 17 refs., 4 figs.« less
NASA Technical Reports Server (NTRS)
Wintucky, Edwin G.; Simons, Rainee N.
2015-01-01
This paper presents the design, fabrication and test results for a novel waveguide multimode directional coupler (MDC). The coupler, fabricated from two dissimilar frequency band waveguides, is capable of isolating power at the second harmonic frequency from the fundamental power at the output port of a traveling-wave tube (TWT) amplifier. Test results from proof-of-concept demonstrations are presented for a Ku-band/Ka-band MDC and a Ka-band/E-band MDC. In addition to power measurements at harmonic frequencies, a potential application of the MDC is in the design of a satellite borne beacon source for atmospheric propagation studies at millimeter-wave (mm-wave) frequencies (Ka-band and E-band).
NASA Technical Reports Server (NTRS)
Seabaugh, A. C.; Mattauch, R., J.
1983-01-01
In-place process for etching and growth of gallium arsenide calls for presaturation of etch and growth melts by arsenic source crystal. Procedure allows precise control of thickness of etch and newly grown layer on substrate. Etching and deposition setup is expected to simplify processing and improve characteristics of gallium arsenide lasers, high-frequency amplifiers, and advanced integrated circuits.
Ultra-high-frequency chaos in a time-delay electronic device with band-limited feedback.
Illing, Lucas; Gauthier, Daniel J
2006-09-01
We report an experimental study of ultra-high-frequency chaotic dynamics generated in a delay-dynamical electronic device. It consists of a transistor-based nonlinearity, commercially-available amplifiers, and a transmission-line for feedback. The feedback is band-limited, allowing tuning of the characteristic time-scales of both the periodic and high-dimensional chaotic oscillations that can be generated with the device. As an example, periodic oscillations ranging from 48 to 913 MHz are demonstrated. We develop a model and use it to compare the experimentally observed Hopf bifurcation of the steady-state to existing theory [Illing and Gauthier, Physica D 210, 180 (2005)]. We find good quantitative agreement of the predicted and the measured bifurcation threshold, bifurcation type and oscillation frequency. Numerical integration of the model yields quasiperiodic and high dimensional chaotic solutions (Lyapunov dimension approximately 13), which match qualitatively the observed device dynamics.
Optical frequency transfer via a 660 km underground fiber link using a remote Brillouin amplifier.
Raupach, S M F; Koczwara, A; Grosche, G
2014-11-03
In long-distance, optical continuous-wave frequency transfer via fiber, remote bidirectional Er³ ⁺ -doped fiber amplifiers are commonly used to mitigate signal attenuation. We demonstrate for the first time the ultrastable transfer of an optical frequency using a remote fiber Brillouin amplifier, placed in a server room along the link. Using it as the only means of remote amplification, on a 660 km loop of installed underground fiber we bridge distances of 250 km and 160 km between amplifications. Over several days of uninterrupted measurement, we find an instability of the frequency transfer (Allan deviation of Λ-weighted data with 1 s gate time) of around 1 × 10(-19) and less for averaging times longer than 3000 s. The modified Allan deviation reaches 3 × 10(-19) at an averaging time of 100 s. Beyond 100 s it follows the interferometer noise floor, and for averaging times longer than 1000 s the modified Allan deviation is in the 10(-20) range. A conservative value of the overall accuracy is 1 × 10(-19)
Multipath interference test method for distributed amplifiers
NASA Astrophysics Data System (ADS)
Okada, Takahiro; Aida, Kazuo
2005-12-01
A method for testing distributed amplifiers is presented; the multipath interference (MPI) is detected as a beat spectrum between the multipath signal and the direct signal using a binary frequency shifted keying (FSK) test signal. The lightwave source is composed of a DFB-LD that is directly modulated by a pulse stream passing through an equalizer, and emits the FSK signal of the frequency deviation of about 430MHz at repetition rate of 80-100 kHz. The receiver consists of a photo-diode and an electrical spectrum analyzer (ESA). The base-band power spectrum peak appeared at the frequency of the FSK frequency deviation can be converted to amount of MPI using a calibration chart. The test method has improved the minimum detectable MPI as low as -70 dB, compared to that of -50 dB of the conventional test method. The detailed design and performance of the proposed method are discussed, including the MPI simulator for calibration procedure, computer simulations for evaluating the error caused by the FSK repetition rate and the fiber length under test and experiments on singlemode fibers and distributed Raman amplifier.
Design and test of a capacitance detection circuit based on a transimpedance amplifier
NASA Astrophysics Data System (ADS)
Linfeng, Mu; Wendong, Zhang; Changde, He; Rui, Zhang; Jinlong, Song; Chenyang, Xue
2015-07-01
This paper presents a transimpedance amplifier (TIA) capacitance detection circuit aimed at detecting micro-capacitance, which is caused by ultrasonic stimulation applied to the capacitive micro-machined ultrasonic transducer (CMUT). In the capacitance interface, a TIA is adopted to amplify the received signal with a center frequency of 400 kHz, and finally detect ultrasound pressure. The circuit has a strong anti-stray property and this paper also studies the calculation of compensation capacity in detail. To ensure high resolution, noise analysis is conducted. After optimization, the detected minimum ultrasound pressure is 2.1 Pa, which is two orders of magnitude higher than the former. The test results showed that the circuit was sensitive to changes in ultrasound pressure and the distance between the CMUT and stumbling block, which also successfully demonstrates the functionality of the developed TIA of the analog-front-end receiver. Project supported by the National Natural Science Foundation of China (No. 61127008) and the Subsidized Program of the National High Technology Research and Development Program of China (No. 2011AA040404).
Appendix: Limits on the use of heterodyning and amplification in optical interferometry
NASA Technical Reports Server (NTRS)
Burke, Bernard F.
1992-01-01
The development of optical fibers, lasers, and mixers at optical frequencies has offered the hope that active methods can contribute to optical interferometry. Heterodyning, in particular, looks attractive, even though bandwidths are narrower than one would like at present; one might expect this limitation to lessen as technology develops. That expectation, unfortunately, is not likely to benefit interferometry at optical wavelengths because of the intervention of quantum mechanics and the second law of thermodynamics, as Burke (1985a) pointed out. So much 'second quantization' noise is generated that only at infrared frequencies, somewhere in the 10-100 micron range, can one look forward to heterodyning in any realistic sense. The reason is easily understood. Every amplifier, in the quantum limit, works by stimulated emission, even though this basic truth is not obvious at radio frequencies. This means that there must be spontaneous emission occurring within every amplifier, and Strandberg (1957) showed that this implied a limiting noise temperature, T sub N = h nu/k, for any amplifier. Burke (1969) used this result to demonstrate that, if it were not for this quantum noise, the VLBI method would allow one to tell which slit a photon went through before forming an interference pattern, thus violating basic tenants of quantum mechanics. In essence, the second quantization condition Delta N Delta phi greater than or = 1 saves one from paradox. One can state the conclusion simply: any amplifier produces approximately one photon per Hertz of bandwidth. In optical interferometry, one will certainly want bandwidth in the 10(exp 12) to 10(exp 14) Hz range, and that implies an intolerable cacophony of noise photons. Only at infrared frequencies can one tolerate the quantum noise, where the natural noise background may be high and the mixers are not as efficient as one would hope for. The crossover at present is about 10 or 20 microns, but the boundary will shift to longer wavelengths as noise performance improves. One might guess that ultimately a wavelength of about 100 microns will mark the limit of useful amplification and heterodyning in astronomical aperture synthesis interferometry.