Tunable Microwave Filter Design Using Thin-Film Ferroelectric Varactors

NASA Astrophysics Data System (ADS)

Haridasan, Vrinda

Military, space, and consumer-based communication markets alike are moving towards multi-functional, multi-mode, and portable transceiver units. Ferroelectric-based tunable filter designs in RF front-ends are a relatively new area of research that provides a potential solution to support wideband and compact transceiver units. This work presents design methodologies developed to optimize a tunable filter design for system-level integration, and to improve the performance of a ferroelectric-based tunable bandpass filter. An investigative approach to find the origins of high insertion loss exhibited by these filters is also undertaken. A system-aware design guideline and figure of merit for ferroelectric-based tunable band- pass filters is developed. The guideline does not constrain the filter bandwidth as long as it falls within the range of the analog bandwidth of a system's analog to digital converter. A figure of merit (FOM) that optimizes filter design for a specific application is presented. It considers the worst-case filter performance parameters and a tuning sensitivity term that captures the relation between frequency tunability and the underlying material tunability. A non-tunable parasitic fringe capacitance associated with ferroelectric-based planar capacitors is confirmed by simulated and measured results. The fringe capacitance is an appreciable proportion of the tunable capacitance at frequencies of X-band and higher. As ferroelectric-based tunable capac- itors form tunable resonators in the filter design, a proportionally higher fringe capacitance reduces the capacitance tunability which in turn reduces the frequency tunability of the filter. Methods to reduce the fringe capacitance can thus increase frequency tunability or indirectly reduce the filter insertion-loss by trading off the increased tunability achieved to lower loss. A new two-pole tunable filter topology with high frequency tunability (> 30%), steep filter skirts, wide stopband rejection, and constant bandwidth is designed, simulated, fabricated and measured. The filters are fabricated using barium strontium titanate (BST) varactors. Electromagnetic simulations and measured results of the tunable two-pole ferroelectric filter are analyzed to explore the origins of high insertion loss in ferroelectric filters. The results indicate that the high-permittivity of the BST (a ferroelectric) not only makes the filters tunable and compact, but also increases the conductive loss of the ferroelectric-based tunable resonators which translates into high insertion loss in ferroelectric filters.

Capacitance-digital and impedance converter as electrical tomography measurement system for biological tissue

NASA Astrophysics Data System (ADS)

Ikhsanti, Mila Izzatul; Bouzida, Rana; Wijaya, Sastra Kusuma; Rohmadi, Muttakin, Imamul; Taruno, Warsito P.

2017-02-01

This research aims to explore the feasibility of capacitance-digital converter and impedance converter for measurement module in electrical capacitance tomography (ECT) system. ECT sensor used was a cylindrical sensor having 8 electrodes. Absolute capacitance measurement system based on Sigma Delta Capacitance-to-Digital-Converter AD7746 has been shown to produce measurement with high resolution. Whereas, capacitance measurement with wide range of frequency is possible using Impedance Converter AD5933. Comparison of measurement accuracy by both AD7746 and AD5933 with reference of LCR meter was evaluated. Biological matters represented in water and oil were treated as object reconstructed into image using linear back projection (LBP) algorithm.

A Tunable Reentrant Resonator with Transverse Orientation of Electric Field for in Vivo EPR Spectroscopy

NASA Astrophysics Data System (ADS)

Chzhan, Michael; Kuppusamy, Periannan; Samouilov, Alexandre; He, Guanglong; Zweier, Jay L.

1999-04-01

There has been a need for development of microwave resonator designs optimized to provide high sensitivity and high stability for EPR spectroscopy and imaging measurements ofin vivosystems. The design and construction of a novel reentrant resonator with transversely oriented electric field (TERR) and rectangular sample opening cross section for EPR spectroscopy and imaging ofin vivobiological samples, such as the whole body of mice and rats, is described. This design with its transversely oriented capacitive element enables wide and simple setting of the center frequency by trimming the dimensions of the capacitive plate over the range 100-900 MHz with unloadedQvalues of approximately 1100 at 750 MHz, while the mechanical adjustment mechanism allows smooth continuous frequency tuning in the range ±50 MHz. This orientation of the capacitive element limits the electric field based loss of resonatorQobserved with large lossy samples, and it facilitates the use of capacitive coupling. Both microwave performance data and EPR measurements of aqueous samples demonstrate high sensitivity and stability of the design, which make it well suited forin vivoapplications.

Novel high-frequency energy-efficient pulsed-dc generator for capacitively coupled plasma discharge

NASA Astrophysics Data System (ADS)

Mamun, Md Abdullah Al; Furuta, Hiroshi; Hatta, Akimitsu

2018-03-01

The circuit design, assembly, and operating tests of a high-frequency and high-voltage (HV) pulsed dc generator (PDG) for capacitively coupled plasma (CCP) discharge inside a vacuum chamber are reported. For capacitive loads, it is challenging to obtain sharp rectangular pulses with fast rising and falling edges, requiring intense current for quick charging and discharging. The requirement of intense current generally limits the pulse operation frequency. In this study, we present a new type of PDG consisting of a pair of half-resonant converters and a constant current-controller circuit connected with HV solid-state power switches that can deliver almost rectangular high voltage pulses with fast rising and falling edges for CCP discharge. A prototype of the PDG is assembled to modulate from a high-voltage direct current (HVdc) input into a pulsed HVdc output, while following an input pulse signal and a set current level. The pulse rise time and fall time are less than 500 ns and 800 ns, respectively, and the minimum pulse width is 1 µs. The maximum voltage for a negative pulse is 1000 V, and the maximum repetition frequency is 500 kHz. During the pulse on time, the plasma discharge current is controlled steadily at the set value. The half-resonant converters in the PDG perform recovery of the remaining energy from the capacitive load at every termination of pulse discharge. The PDG performed with a high energy efficiency of 85% from the HVdc input to the pulsed dc output at a repetition rate of 1 kHz and with stable plasma operation in various discharge conditions. The results suggest that the developed PDG can be considered to be more efficient for plasma processing by CCP.

Novel high-frequency energy-efficient pulsed-dc generator for capacitively coupled plasma discharge.

PubMed

Mamun, Md Abdullah Al; Furuta, Hiroshi; Hatta, Akimitsu

2018-03-01

The circuit design, assembly, and operating tests of a high-frequency and high-voltage (HV) pulsed dc generator (PDG) for capacitively coupled plasma (CCP) discharge inside a vacuum chamber are reported. For capacitive loads, it is challenging to obtain sharp rectangular pulses with fast rising and falling edges, requiring intense current for quick charging and discharging. The requirement of intense current generally limits the pulse operation frequency. In this study, we present a new type of PDG consisting of a pair of half-resonant converters and a constant current-controller circuit connected with HV solid-state power switches that can deliver almost rectangular high voltage pulses with fast rising and falling edges for CCP discharge. A prototype of the PDG is assembled to modulate from a high-voltage direct current (HVdc) input into a pulsed HVdc output, while following an input pulse signal and a set current level. The pulse rise time and fall time are less than 500 ns and 800 ns, respectively, and the minimum pulse width is 1 µs. The maximum voltage for a negative pulse is 1000 V, and the maximum repetition frequency is 500 kHz. During the pulse on time, the plasma discharge current is controlled steadily at the set value. The half-resonant converters in the PDG perform recovery of the remaining energy from the capacitive load at every termination of pulse discharge. The PDG performed with a high energy efficiency of 85% from the HVdc input to the pulsed dc output at a repetition rate of 1 kHz and with stable plasma operation in various discharge conditions. The results suggest that the developed PDG can be considered to be more efficient for plasma processing by CCP.

Broadband linear high-voltage amplifier for radio frequency ion traps.

PubMed

Kuhlicke, Alexander; Palis, Klaus; Benson, Oliver

2014-11-01

We developed a linear high-voltage amplifier for small capacitive loads consisting of a high-voltage power supply and a transistor amplifier. With this cost-effective circuit including only standard parts sinusoidal signals with a few volts can be amplified to 1.7 kVpp over a usable frequency range at large-signal response spanning four orders of magnitude from 20 Hz to 100 kHz under a load of 10 pF. For smaller output voltages the maximum frequency shifts up to megahertz. We test different capacitive loads to probe the influence on the performance. The presented amplifier is sustained short-circuit proof on the output side, which is a significant advantage over other amplifier concepts. The amplifier can be used to drive radio frequency ion traps for single charged nano- and microparticles, which will be presented in brief.

Particle-In-Cell Simulations of Asymmetric Dual Frequency Capacitive Discharge Physics

NASA Astrophysics Data System (ADS)

Wu, Alan; Lichtenberg, A. J.; Lieberman, M. A.; Verboncoeur, J. P.

2003-10-01

Dual frequency capacitive discharges are finding increasing use for etching in the microelectronics industry. In the ideal case, the high frequency power (typically 27.1-160 MHz) controls the plasma density and the low frequency power (typically 2-13.56 MHz) controls the ion energy. The electron power deposition and the dynamics of dual frequency rf sheaths are not well understood. We report on particle-in-cell computer simulations of an asymmetric dual frequency argon discharge. The simulations are performed in 1D (radial) geometry using the bounded electrostatic code XPDP1. Operating parameters are 27.1/2 MHz high/low frequencies, 10/13 cm inner/outer radii, 3-200 mTorr pressures, and 10^9-10^11 cm-3 densities. We determine the power deposition and sheath dynamics for the high frequency power alone, and with various added low frequency powers. We compare the simulation results to simple global models of dual frequency discharges. Support provided by Lam Research, NSF Grant ECS-0139956, California industries, and UC-SMART Contract SM99-10051.

Micromachined low frequency rocking accelerometer with capacitive pickoff

DOEpatents

Lee, Abraham P.; Simon, Jonathon N.; McConaghy, Charles F.

2001-01-01

A micro electro mechanical sensor that uses capacitive readout electronics. The sensor involves a micromachined low frequency rocking accelerometer with capacitive pickoff fabricated by deep reactive ion etching. The accelerometer includes a central silicon proof mass, is suspended by a thin polysilicon tether, and has a moving electrode (capacitor plate or interdigitated fingers) located at each end the proof mass. During movement (acceleration), the tethered mass moves relative to the surrounding packaging, for example, and this defection is measured capacitively by a plate capacitor or interdigitated finger capacitor, having the cooperating fixed electrode (capacitor plate or interdigitated fingers) positioned on the packaging, for example. The micromachined rocking accelerometer has a low frequency (<500 Hz), high sensitivity (.mu.G), with minimal power usage. The capacitors are connected to a power supply (battery) and to sensor interface electronics, which may include an analog to digital (A/D) converter, logic, RF communication link, antenna, etc. The sensor (accelerometer) may be, for example, packaged along with the interface electronics and a communication system in a 2".times.2".times.2" cube. The proof mass may be asymmetric or symmetric. Additional actuating capacitive plates may be used for feedback control which gives a greater dynamic range.

Plasma production by helicon and slow waves.

PubMed

Sakawa, Youichi; Kunimatsu, Hiroyuki; Kikuchi, Hideki; Fukui, Yasuaki; Shoji, Tatsuo

2003-03-14

The observation of slow-wave sustained (SW) discharge in a whistler- or helicon-wave range of frequency is made using high-frequency and very-high-frequency bands of rf. The SW discharge occurs at an extremely low rf power and plasma density, which are lower than a capacitive-coupling discharge region.

Oscillator or Amplifier With Wide Frequency Range

NASA Technical Reports Server (NTRS)

Kleinberg, L.; Sutton, J.

1987-01-01

Inductive and capacitive effects synthesized with feedback circuits. Oscillator/amplifier resistively tunable over wide frequency range. Feedback circuits containing operational amplifiers, resistors, and capacitors synthesize electrical effects of inductance and capacitance in parallel between input terminals. Synthetic inductance and capacitance, and, therefore, resonant frequency of input admittance, adjusted by changing potentiometer setting.

A microfabricated fringing field capacitive pH sensor with an integrated readout circuit

NASA Astrophysics Data System (ADS)

Arefin, Md Shamsul; Bulut Coskun, M.; Alan, Tuncay; Redoute, Jean-Michel; Neild, Adrian; Rasit Yuce, Mehmet

2014-06-01

This work presents a microfabricated fringe-field capacitive pH sensor using interdigitated electrodes and an integrated modulation-based readout circuit. The changes in capacitance of the sensor result from the permittivity changes due to pH variations and are converted to frequency shifts using a crossed-coupled voltage controlled oscillator readout circuit. The shift in resonant frequency of the readout circuit is 30.96 MHz for a change in pH of 1.0-5.0. The sensor can be used for the measurement of low pH levels, such as gastric acid, and can be integrated with electronic pills. The measurement results show high repeatability, low noise, and a stable output.

A MEMS Interface IC With Low-Power and Wide-Range Frequency-to-Voltage Converter for Biomedical Applications.

PubMed

Arefin, Md Shamsul; Redouté, Jean-Michel; Yuce, Mehmet Rasit

2016-04-01

This paper presents an interface circuit for capacitive and inductive MEMS biosensors using an oscillator and a charge pump based frequency-to-voltage converter. Frequency modulation using a differential crossed coupled oscillator is adopted to sense capacitive and inductive changes. The frequency-to-voltage converter is designed with a negative feedback system and external controlling parameters to adjust the sensitivity, dynamic range, and nominal point for the measurement. The sensitivity of the frequency-to-voltage converter is from 13.28 to 35.96 mV/MHz depending on external voltage and charging current. The sensitivity ranges of the capacitive and inductive interface circuit are 17.08 to 54.4 mV/pF and 32.11 to 82.88 mV/mH, respectively. A capacitive MEMS based pH sensor is also connected with the interface circuit to measure the high acidic gastric acid throughout the digestive tract. The sensitivity for pH from 1 to 3 is 191.4 mV/pH with 550 μV(pp) noise. The readout circuit is designed and fabricated using the UMC 0.18 μm CMOS technology. It occupies an area of 0.18 mm (2) and consumes 11.8 mW.

New sample cell configuration for wide-frequency dielectric spectroscopy: DC to radio frequencies.

PubMed

Nakanishi, Masahiro; Sasaki, Yasutaka; Nozaki, Ryusuke

2010-12-01

A new configuration for the sample cell to be used in broadband dielectric spectroscopy is presented. A coaxial structure with a parallel plate capacitor (outward parallel plate cell: OPPC) has made it possible to extend the frequency range significantly in comparison with the frequency range of the conventional configuration. In the proposed configuration, stray inductance is significantly decreased; consequently, the upper bound of the frequency range is improved by two orders of magnitude from the upper limit of conventional parallel plate capacitor (1 MHz). Furthermore, the value of capacitance is kept high by using a parallel plate configuration. Therefore, the precision of the capacitance measurement in the lower frequency range remains sufficiently high. Finally, OPPC can cover a wide frequency range (100 Hz-1 GHz) with an appropriate admittance measuring apparatus such as an impedance or network analyzer. The OPPC and the conventional dielectric cell are compared by examining the frequency dependence of the complex permittivity for several polar liquids and polymeric films.

High-κ TiO{sub 2} thin film prepared by sol-gel spin-coating method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Arvind; Mondal, Sandip; Rao, K. S. R. Koteswara, E-mail: ksrkrao@physics.iisc.ernet.in

2015-06-24

High-k TiO{sub 2} thin film on p-type silicon substrate was fabricated by a combined sol-gel and spin coating method. Thus deposited titania film had anatase phase with a small grain size of 16 nm and surface roughness of ≅ 0.6 nm. The oxide capacitance (C{sub ox}), flat band capacitance (C{sub FB}), flat band voltage (V{sub FB}), oxide trapped charge (Q{sub ot}), calculated from the high frequency (1 MHz) C-V curve were 0.47 nF, 0.16 nF, − 0.91 V, 4.7x10{sup −12} C, respectively. As compared to the previous reports, a high dielectric constant of 94 at 1 MHz frequency was observedmore » in the devices investigated here and an equivalent oxide thickness (EOT) was 4.1 nm. Dispersion in accumulation capacitance shows a linear relationship with AC frequencies. Leakage current density was found in acceptable limits (2.1e-5 A/cm{sup 2} for −1 V and 5.7e-7 A/cm{sup 2} for +1 V) for CMOS applications.« less

Wavelet approach to artifact noise removal from Capacitive coupled Electrocardiograph.

PubMed

Lee, Seung Min; Kim, Ko Keun; Park, Kwang Suk

2008-01-01

Capacitive coupled Electrocardiography (ECG) is introduced as non-invasive measurement technology for ubiquitous health care and appliance are spread out widely. Although it has many merits, however, capacitive coupled ECG is very weak for motion artifacts for its non-skin-contact property. There are many studies for artifact problems which treats all artifact signals below 0.8Hz. In our capacitive coupled ECG measurement system, artifacts exist not only below 0.8Hz but also over than 10Hz. Therefore, artifact noise removal algorithm using wavelet method is tested to reject artifact-wandered signal from measured signals. It is observed that using power calculation each decimation step, artifact-wandered signal is removed as low frequency artifacts as high frequency artifacts. Although some original ECG signal is removed with artifact signal, we could level the signal quality for long term measure which shows the best quality ECG signals as we can get.

In-circuit-measurement of parasitic elements in high gain high bandwidth low noise transimpedance amplifiers.

PubMed

Cochems, P; Kirk, A; Zimmermann, S

2014-12-01

Parasitic elements play an important role in the development of every high performance circuit. In the case of high gain, high bandwidth transimpedance amplifiers, the most important parasitic elements are parasitic capacitances at the input and in the feedback path, which significantly influence the stability, the frequency response, and the noise of the amplifier. As these parasitic capacitances range from a few picofarads down to only a few femtofarads, it is nearly impossible to measure them accurately using traditional LCR meters. Unfortunately, they also cannot be easily determined from the transfer function of the transimpedance amplifier, as it contains several overlapping effects and its measurement is only possible when the circuit is already stable. Therefore, we developed an in-circuit measurement method utilizing minimal modifications to the input stage in order to measure its parasitic capacitances directly and with unconditional stability. Furthermore, using the data acquired with this measurement technique, we both proposed a model for the complicated frequency response of high value thick film resistors as they are used in high gain transimpedance amplifiers and optimized our transimpedance amplifier design.

Frequency-Dependent Capacitance of Hydrophobic Membranes Containing Fixed Negative Charges

PubMed Central

Ilani, Asher

1968-01-01

Filters containing fixed negative charges were saturated with hydrophobic solvent and interposed between aqueous solutions. The capacitance of such membranes was measured in the frequency range of 0.05-30 kc. The capacitance increased with decrease in frequency. The frequency dependence of the capacitance was sensitive to nature of the cation present and to salt concentration in the aqueous solution. It is suggested that variation of membrane resistivity in the space charge region of the membrane is responsible for this phenomenon. Possible effects of the potential and counterion concentration profiles at the membrane-water interface are discussed. PMID:5699796

Design and analysis of optimised class E power amplifier using shunt capacitance in the output structure

NASA Astrophysics Data System (ADS)

Hayati, Mohsen; Roshani, Sobhan; Zirak, Ali Reza

2017-05-01

In this paper, a class E power amplifier (PA) with operating frequency of 1 MHz is presented. MOSFET non-linear drain-to-source parasitic capacitance, linear external capacitance at drain-to-source port and linear shunt capacitance in the output structure are considered in design theory. One degree of freedom is added to the design of class E PA, by assuming the shunt capacitance in the output structure in the analysis. With this added design degree of freedom it is possible to achieve desired values for several parameters, such as output voltage, load resistance and operating frequency, while both zero voltage and zero derivative switching (ZVS and ZDS) conditions are satisfied. In the conventional class E PA, high value of peak switch voltage results in limitations for the design of amplifier, while in the presented structure desired specifications could be achieved with the safe margin of peak switch voltage. The results show that higher operating frequency and output voltage can also be achieved, compared to the conventional structure. PSpice software is used in order to simulate the designed circuit. The presented class E PA is designed, fabricated and measured. The measured results are in good agreement with simulation and theory results.

Silicon micromachined accelerometer/seismometer and method of making the same

NASA Technical Reports Server (NTRS)

Martin, Richard D. (Inventor); Pike, W. Thomas (Inventor)

2001-01-01

A silicon-based microaccelerometer for seismic application is provided using a low-resonant frequency (10 Hz), large proof mass (1 gram), and high Q suspension to achieve high sensitivity of less than 1 ng with a bandwidth a 0.05 to 50 Hz. The proof mass is cut away from a planar substrate in the form of a disk using abrasive cutting, which disk closely fits but does not touch a surrounding angular frame. The spring of the microaccelerometer between the angular frame and the proof mass is provided from two continuous, 3 microns thick membranes. The fixed capacitive electrodes are provided on separate, subsequently bonded substrates, and movable capacitive plates are provided on the membranes. By fabricating capacitive plates on the separate substrates, the gap between the fixed and movable capacitive plates in the differential capacitive sensor is closely controlled. The use of continuous membranes for the spring produces a shock resistant, robust sensor.

Parametric analysis of hollow conductor parallel and coaxial transmission lines for high frequency space power distribution

NASA Technical Reports Server (NTRS)

Jeffries, K. S.; Renz, D. D.

1984-01-01

A parametric analysis was performed of transmission cables for transmitting electrical power at high voltage (up to 1000 V) and high frequency (10 to 30 kHz) for high power (100 kW or more) space missions. Large diameter (5 to 30 mm) hollow conductors were considered in closely spaced coaxial configurations and in parallel lines. Formulas were derived to calculate inductance and resistance for these conductors. Curves of cable conductance, mass, inductance, capacitance, resistance, power loss, and temperature were plotted for various conductor diameters, conductor thickness, and alternating current frequencies. An example 5 mm diameter coaxial cable with 0.5 mm conductor thickness was calculated to transmit 100 kW at 1000 Vac, 50 m with a power loss of 1900 W, an inductance of 1.45 micron and a capacitance of 0.07 micron-F. The computer programs written for this analysis are listed in the appendix.

Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diode

NASA Astrophysics Data System (ADS)

Anuar Mohamad, Khairul; Tak Hoh, Hang; Alias, Afishah; Ghosh, Bablu Kumar; Fukuda, Hisashi

2017-11-01

A metal-organic-metal (MOM) type Schottky diode based on poly (triarylamine) (PTAA) thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f) and capacitance-voltage (C-V-f) characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittance-based measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit). Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz) but decreases at high frequency (1 - 10 kHz). The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 1012 eV-1cm-2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC) signal.

Voltage and frequency dependence of prestin-associated charge transfer

PubMed Central

Sun, Sean X.; Farrell, Brenda; Chana, Matthew S.; Oster, George; Brownell, William E.; Spector, Alexander A.

2009-01-01

Membrane protein prestin is a critical component of the motor complex that generates forces and dimensional changes in cells in response to changes in the cell membrane potential. In its native cochlear outer hair cell, prestin is crucial to the amplification and frequency selectivity of the mammalian ear up to frequencies of tens of kHz. Other cells transfected with prestin acquire voltage-dependent properties similar to those of the native cell. The protein performance is critically dependent on chloride ions, and intrinsic protein charges also play a role. We propose an electro-diffusion model to reveal the frequency and voltage dependence of electric charge transfer by prestin. The movement of the combined charge (i.e., anion and protein charges) across the membrane is described with a Fokker-Planck equation coupled to a kinetic equation that describes the binding of chloride ions to prestin. We found a voltage-and frequency-dependent phase shift between the transferred charge and the applied electric field that determines capacitive and resistive components of the transferred charge. The phase shift monotonically decreases from zero to -90 degree as a function of frequency. The capacitive component as a function of voltage is bell-shaped, and decreases with frequency. The resistive component is bell-shaped for both voltage and frequency. The capacitive and resistive components are similar to experimental measurements of charge transfer at high frequencies. The revealed nature of the transferred charge can help reconcile the high-frequency electrical and mechanical observations associated with prestin, and it is important for further analysis of the structure and function of this protein. PMID:19490917

rf Quantum Capacitance of the Topological Insulator Bi2Se3 in the Bulk Depleted Regime for Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Inhofer, A.; Duffy, J.; Boukhicha, M.; Bocquillon, E.; Palomo, J.; Watanabe, K.; Taniguchi, T.; Estève, I.; Berroir, J. M.; Fève, G.; Plaçais, B.; Assaf, B. A.

2018-02-01

A metal-dielectric topological-insulator capacitor device based on hexagonal-boron-nitrate- (h -BN) encapsulated CVD-grown Bi2Se3 is realized and investigated in the radio-frequency regime. The rf quantum capacitance and device resistance are extracted for frequencies as high as 10 GHz and studied as a function of the applied gate voltage. The superior quality h -BN gate dielectric combined with the optimized transport characteristics of CVD-grown Bi2Se3 (n ˜1018 cm-3 in 8 nm) on h -BN allow us to attain a bulk depleted regime by dielectric gating. A quantum-capacitance minimum and a linear variation of the capacitance with the chemical potential are observed revealing a Dirac regime. The topological surface state in proximity to the gate is seen to reach charge neutrality, but the bottom surface state remains charged and capacitively coupled to the top via the insulating bulk. Our work paves the way toward implementation of topological materials in rf devices.

High bandwidth on-chip capacitive tuning of microtoroid resonators

NASA Astrophysics Data System (ADS)

Baker, Christopher G.; Bekker, Christiaan; McAuslan, David L.; Sheridan, Eoin; Bowen, Warwick P.

2016-09-01

We report on the design, fabrication and characterization of silica microtoroid based cavity opto-electromechanical systems (COEMS). Electrodes patterned onto the microtoroid resonators allow for rapid capacitive tuning of the optical whispering gallery mode resonances while maintaining their ultrahigh quality factor, enabling applications such as efficient radio to optical frequency conversion, optical routing and switching applications.

Electrical characteristics of pentacene-based Schottky diodes

NASA Astrophysics Data System (ADS)

Lee, Y. S.; Park, J. H.; Choi, J. S.

2003-01-01

The current-voltage ( I-V), capacitance-frequency ( C-f), and capacitance-voltage ( C-V) characteristics of organic diodes with a pentacene/aluminum Sckottky contact have been investigated. From the measured diode capacitances, it is revealed that the frequency-dependent properties are related to the localized traps in the band gap of pentacene. The C-V characteristics for different test frequencies are presented. In the low frequency region, the capacitance is nearly constant with reverse bias and increase with the forward bias. With even higher forward bias, the capacitance gradually decreases, which is due to the detrapping of the trapped charges. The intrinsic charge carrier concentration in pentacene was extracted as 3.1×10 17 cm -3 from the C-V characteristics. The C-V properties of the pentacene-based metal-oxide-semiconductor structure have also studied.

High frequency capacitance-voltage characteristics of thermally grown SiO2 films on beta-SiC

NASA Technical Reports Server (NTRS)

Tang, S. M.; Berry, W. B.; Kwor, R.; Zeller, M. V.; Matus, L. G.

1990-01-01

Silicon dioxide films grown under dry and wet oxidation environment on beta-SiC films have been studied. The beta-SiC films had been heteroepitaxially grown on both on-axis and 2-deg off-axis (001) Si substrates. Capacitance-voltage and conductance-voltage characteristics of metal-oxide-semiconductor structures were measured in a frequency range of 10 kHz to 1 MHz. From these measurements, the interface trap density and the effective fixed oxide charge density were observed to be generally lower for off-axis samples.

Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu; Ribeiro, Mário; Atxabal, Ainhoa

The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{sub 2}O{sub 3}/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important formore » understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.« less

A finite element procedure for radio-frequency sheath–plasma interactions based on a sheath impedance model

DOE PAGES

Kohno, H.; Myra, J. R.

2017-07-24

A finite element code that solves self-consistent radio-frequency (RF) sheath-plasma interaction problems is improved by incorporating a generalized sheath boundary condition in the macroscopic solution scheme. This sheath boundary condition makes use of a complex sheath impedance including both the sheath capacitance and resistance, which enables evaluation of not only the RF voltage across the sheath but also the power dissipation in the sheath. The newly developed finite element procedure is applied to cases where the background magnetic field is perpendicular to the sheath surface in one- and two-dimensional domains filled by uniform low- and high-density plasmas. The numerical resultsmore » are compared with those obtained by employing the previous capacitive sheath model at a typical frequency for ion cyclotron heating used in fusion experiments. It is shown that for sheaths on the order of 100 V in a high-density plasma, localized RF power deposition can reach a level which causes material damage. It is also shown that the sheath-plasma wave resonances predicted by the capacitive sheath model do not occur when parameters are such that the generalized sheath impedance model substantially modifies the capacitive character of the sheath. Here, possible explanations for the difference in the maximum RF sheath voltage depending on the plasma density are also discussed.« less

A finite element procedure for radio-frequency sheath–plasma interactions based on a sheath impedance model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kohno, H.; Myra, J. R.

A finite element code that solves self-consistent radio-frequency (RF) sheath-plasma interaction problems is improved by incorporating a generalized sheath boundary condition in the macroscopic solution scheme. This sheath boundary condition makes use of a complex sheath impedance including both the sheath capacitance and resistance, which enables evaluation of not only the RF voltage across the sheath but also the power dissipation in the sheath. The newly developed finite element procedure is applied to cases where the background magnetic field is perpendicular to the sheath surface in one- and two-dimensional domains filled by uniform low- and high-density plasmas. The numerical resultsmore » are compared with those obtained by employing the previous capacitive sheath model at a typical frequency for ion cyclotron heating used in fusion experiments. It is shown that for sheaths on the order of 100 V in a high-density plasma, localized RF power deposition can reach a level which causes material damage. It is also shown that the sheath-plasma wave resonances predicted by the capacitive sheath model do not occur when parameters are such that the generalized sheath impedance model substantially modifies the capacitive character of the sheath. Here, possible explanations for the difference in the maximum RF sheath voltage depending on the plasma density are also discussed.« less

Ultrahigh-rate supercapacitors with large capacitance based on edge oriented graphene coated carbonized cellulous paper as flexible freestanding electrodes

NASA Astrophysics Data System (ADS)

Ren, Guofeng; Li, Shiqi; Fan, Zhao-Xia; Hoque, Md Nadim Ferdous; Fan, Zhaoyang

2016-09-01

Large-capacitance and ultrahigh-rate electrochemical supercapacitors (UECs) with frequency response up to kilohertz (kHz) range are reported using light, thin, and flexible freestanding electrodes. The electrode is formed by perpendicularly edge oriented multilayer graphene/thin-graphite (EOG) sheets grown radially around individual fibers in carbonized cellulous paper (CCP), with cellulous carbonization and EOG deposition implemented in one step. The resulted ∼10 μm thick EOG/CCP electrode is light and flexible. The oriented porous structure of EOG with large surface area, in conjunction with high conductivity of the electrode, ensures ultrahigh-rate performance of the fabricated cells, with large areal capacitance of 0.59 mF cm-2 and 0.53 mF cm-2 and large phase angle of -83° and -80° at 120 Hz and 1 kHz, respectively. Particularly, the hierarchical EOG/CCP sheet structure allows multiple sheets stacked together for thick electrodes with almost linearly increased areal capacitance while maintaining the volumetric capacitance nearly no degradation, a critical merit for developing practical faraday-scale UECs. 3-layers of EOG/CCP electrode achieved an areal capacitance of 1.5 mF cm-2 and 1.4 mF cm-2 at 120 Hz and 1 kHz, respectively. This demonstration moves a step closer to the goal of bridging the frequency/capacitance gap between supercapacitors and electrolytic capacitors.

Modeling of frequency-dependent negative differential capacitance in InGaAs/InP photodiode

NASA Astrophysics Data System (ADS)

Wang, Yidong; Chen, Jun; Xu, Jintong; Li, Xiangyang

2018-03-01

The negative differential capacitance (NDC) of p-i-n InGaAs/InP photodetector has been clearly observed, and the small signal model of frequency-dependent NDC is established, based on the accumulation and emission of electrons at the p-InP/i-InGaAs interface. The NDC phenomenon is contributed by the additional capacitance (CT), which is caused by the charging-discharging process in the p-InP/i-InGaAs interface. It is found that the NDC becomes more obvious with decreasing frequency, which is consistent with the conclusion of the experiment. It is proved that the probability of electron capture/escape in the p-i interface is affected by frequency. Therefore, the smaller frequency applied, the higher additional capacitance is obtained.

Study of micro piezoelectric vibration generator with added mass and capacitance suitable for broadband vibration

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Qing, E-mail: hqng@163.com; Mao, Xinhua, E-mail: 30400414@qq.com; Chu, Dongliang, E-mail: 569256386@qq.com

This study proposes an optimized frequency adjustment method that uses a micro-cantilever beam-based piezoelectric vibration generator based on a combination of added mass and capacitance. The most important concept of the proposed method is that the frequency adjustment process is divided into two steps: the first is a rough adjustment step that changes the size of the mass added at the end of cantilever to adjust the frequency in a large-scale and discontinuous manner; the second step is a continuous but short-range frequency adjustment via the adjustable added capacitance. Experimental results show that when the initial natural frequency of amore » micro piezoelectric vibration generator is 69.8 Hz, then this natural frequency can be adjusted to any value in the range from 54.2 Hz to 42.1 Hz using the combination of the added mass and the capacitance. This method simply and effectively matches a piezoelectric vibration generator’s natural frequency to the vibration source frequency.« less

Scanning capacitance microscope as a tool for the characterization of integrated circuits

NASA Astrophysics Data System (ADS)

Born, A.; Wiesendanger, R.

With the decreasing size of integrated circuits (ICs), there is an increasing demand for the measurement of doping profiles with high spatial resolution. The scanning capacitance microscope (SCM) offers the possibility of measuring 2D dopant profiles with spatial resolution of less than 20 nm. A great problem of the SCM technique is the influence of previous measurements on subsequent ones. We have observed hysteresis in the SCM images and measured low-frequency C-V curves with high-frequency equipment. A theoretical model was developed to understand this phenomenon. We are now undertaking the first steps using the SCM as a standard device for the characterization of ICs.

Mass spectrometry based on a coupled Cooper-pair box and nanomechanical resonator system

NASA Astrophysics Data System (ADS)

Jiang, Cheng; Chen, Bin; Li, Jin-Jin; Zhu, Ka-Di

2011-10-01

Nanomechanical resonators (NRs) with very high frequency have a great potential for mass sensing with unprecedented sensitivity. In this study, we propose a scheme for mass sensing based on the NR capacitively coupled to a Cooper-pair box (CPB) driven by two microwave currents. The accreted mass landing on the resonator can be measured conveniently by tracking the resonance frequency shifts because of mass changes in the signal absorption spectrum. We demonstrate that frequency shifts induced by adsorption of ten 1587 bp DNA molecules can be well resolved in the absorption spectrum. Integration with the CPB enables capacitive readout of the mechanical resonance directly on the chip.

Capacitance-level/density monitor for fluidized-bed combustor

DOEpatents

Fasching, George E.; Utt, Carroll E.

1982-01-01

A multiple segment three-terminal type capacitance probe with segment selection, capacitance detection and compensation circuitry and read-out control for level/density measurements in a fluidized-bed vessel is provided. The probe is driven at a high excitation frequency of up to 50 kHz to sense quadrature (capacitive) current related to probe/vessel capacitance while being relatively insensitive to the resistance current component. Compensation circuitry is provided for generating a negative current of equal magnitude to cancel out only the resistive component current. Clock-operated control circuitry separately selects the probe segments in a predetermined order for detecting and storing this capacitance measurement. The selected segment acts as a guarded electrode and is connected to the read-out circuitry while all unselected segments are connected to the probe body, which together form the probe guard electrode. The selected probe segment capacitance component signal is directed to a corresponding segment channel sample and hold circuit dedicated to that segment to store the signal derived from that segment. This provides parallel outputs for display, computer input, etc., for the detected capacitance values. The rate of segment sampling may be varied to either monitor the dynamic density profile of the bed (high sampling rate) or monitor average bed characteristics (slower sampling rate).

Dielectric Performance of a High Purity HTCC Alumina at High Temperatures - a Comparison Study with Other Polycrystalline Alumina

NASA Technical Reports Server (NTRS)

Chen, Liangyu

2014-01-01

A very high purity (99.99+%) high temperature co-fired ceramic (HTCC) alumina has recently become commercially available. The raw material of this HTCC alumina is very different from conventional HTCC alumina, and more importantly there is no glass additive in this alumina material for co-firing processing. Previously, selected HTCC and LTCC (low temperature co-fired ceramic) alumina materials were evaluated at high temperatures as dielectric and compared to a regularly sintered 96% polycrystalline alumina (96% Al2O3), where 96% alumina was used as the benchmark. A prototype packaging system based on regular 96% alumina with Au thickfilm metallization successfully facilitated long term testing of high temperature silicon carbide (SiC) electronic devices for over 10,000 hours at 500 C. In order to evaluate this new high purity HTCC alumina for possible high temperature packaging applications, the dielectric properties of this HTCC alumina substrate were measured and compared with those of 96% alumina and a previously tested LTCC alumina from room temperature to 550 C at frequencies of 120 Hz, 1 KHz, 10 KHz, 100 KHz, and 1 MHz. A parallel-plate capacitive device with dielectric of the HTCC alumina and precious metal electrodes were used for measurements of the dielectric constant and dielectric loss of the co-fired alumina material in the temperature and frequency ranges. The capacitance and AC parallel conductance of the capacitive device were directly measured by an AC impedance meter, and the dielectric constant and parallel AC conductivity of the dielectric were calculated from the capacitance and conductance measurement results. The temperature and frequency dependent dielectric constant, AC conductivity, and dissipation factor of the HTCC alumina substrate are presented and compared to those of 96% alumina and a selected LTCC alumina. Other technical advantages of this new co-fired material for possible high packaging applications are also discussed.

AC-conductance and capacitance measurements for ethanol vapor detection using carbon nanotube-polyvinyl alcohol composite based devices.

PubMed

Greenshields, Márcia W C C; Meruvia, Michelle S; Hümmelgen, Ivo A; Coville, Neil J; Mhlanga, Sabelo D; Ceragioli, Helder J; Quispe, Jose C Rojas; Baranauskas, Vitor

2011-03-01

We report the preparation of inexpensive ethanol sensor devices using multiwalled carbon nanotube-polyvinyl alcohol composite films deposited onto interdigitated electrodes patterned on phenolite substrates. We investigate the frequency dependent response of the device conductance and capacitance showing that higher sensitivity is obtained at higher frequency if the conductance is used as sensing parameter. In the case of capacitance measurements, higher sensitivity is obtained at low frequency. Ethanol detection at a concentration of 300 ppm in air is demonstrated. More than 80% of the sensor conductance and capacitance variation response occurs in less than 20 s.

High-frequency carbon supercapacitors from polyfurfuryl alcohol

NASA Astrophysics Data System (ADS)

Ruiz, V.; Pandolfo, A. G.

Porous carbons with controllable and narrow pore-size distributions are prepared from the chemical activation of polyfurfuryl alcohol (PFA). High apparent BET surface areas, up to 2600 m 2 g -1 (2611 m 2 g -1 by Density Functional Theory (DFT)), and good electrical conductivities (up to ∼130 S cm -1) are obtained. By varying the potassium hydroxide: carbon precursor ratio, the preparation of carbons with different proportions of micro- and fine mesoporosity (<5 nm) can be tailored to provide an ideal electronic and ionic pore structure for electrochemical energy-storage devices, such as electrical double-layer capacitors. High specific capacitance values are obtained up to 147 F g -1 in a voltage window of 2.5 V using 1 M tetraethyl ammonium tetrafluoroborate in acetonitrile. Moreover, excellent high-current and high-frequency performance is demonstrated: 100 F g -1 at 225 A g -1 (10 Hz) and ∼30 F g -1 at 100 Hz. When comparing the performance with commercial activated carbons (ACs) of similar textural properties, the PFA-derived ACs demonstrated better performance in terms of higher capacitance values and improved rate capabilities. There is a 125% increase in capacitance values at 1 kHz.

The Realization and Analysis of Capacitance Self Tracing (CST) Method for Wide Band Response Measurement of Carrier Type Dynamic Strain Amplifier

NASA Astrophysics Data System (ADS)

Kubodera, Shinji; Tanzawa, Tsutomu; Morisawa, Masayuki; Kiyohiro, Noriaki

Carrier type dynamic strain amplifiers are frequently used for stress measurement with strain gages. That is because the carrier type dynamic strain amplifier can conduct high precision measurement since it is highly resistant against hum noise from the power supply frequency in principle and is free from the thermoelectomotive force even if a metal contact is used in wiring to a Wheatstone bridge for measuring. A problem of the carrier type dynamic strain amplifier is generation of Capacitive component (hereinafter referred to as the C component) in an input cable connecting from the amplifier to the input sensor (Wheatstone bridge for measuring). The C component varies with cable length, cable materials, or ambient temperature change. The aforementioned changing adversely affects the stability of the amplifier. In this paper, we realize and analyze the method that increases the stability of amplifier by detecting, eliminating and self tracking the above C component constantly. Used carrier frequency at 12kHz and 28kHz. We made amplifiers with noise resistant and wide band frequency of measurement range and verified the theory of the Capacitance Self Tracing with the above amplifiers.

Influence of reactivation on the electrochemical performances of activated carbon based on coconut shell.

PubMed

Geng, Xin; Li, Lixiang; Zhang, Meiling; An, Baigang; Zhu, Xiaoming

2013-12-01

Coconut shell-based activated carbon (AC) were prepared by CO2 activation, and then the ACs with higher mesopore ratio were obtained by steam activation and by impregnating iron catalyst followed by steam activation, respectively. The AC with the highest mesopore ratio (AChmr) shows superior capacitive behavior, power output and high-frequency performance in supercapacitors. The results should attribute to the connection of its wide micropores and mesopores larger than 3 nm, which is more favorable for fast ionic transportation. The pore size distribution exhibits that the mesopore ratios of the ACs are significantly increased by reactivation of steam or catalyst up to 75% and 78%, respectively. As evidenced by cyclic voltammetry, electrochemical impedance spectroscopy, and galvanostatic measurements, the AChmr shows superior capacitive behaviors, conductivity and performance of electrolytic ionic transportation. The response current densities are evidently enhanced through the cyclic voltammery test at 50 mV/sec scan rate. The electrochemical impedance spectroscopy demonstrates that the conductivity and ion transport performance of the ACs are improved. The specific capacitances of the ACs were increased from 140 to 240 F/g at 500 mA/g current density. The AChmr can provide much higher power density while still maintaining good energy density, and demonstrate excellent high-frequency performances. The pore structure and conductivity of the AChmr also improve the cycleability and self-discharge of supercapacitors. Such AChmr exhibits a great potential in supercapacitors, particularly for applications where high power output and good high-frequency capacitive performances are required. Copyright © 2013 The Research Centre for Eco-Environmental Sciences, Chinese Academy of Sciences. Published by Elsevier B.V. All rights reserved.

Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance

NASA Astrophysics Data System (ADS)

Pi, T. W.; Chen, W. S.; Lin, Y. H.; Cheng, Y. T.; Wei, G. J.; Lin, K. Y.; Cheng, C.-P.; Kwo, J.; Hong, M.

2017-01-01

This study investigates the origin of long-puzzled high frequency dispersion on the accumulation region of capacitance-voltage characteristics in an n-type GaAs-based metal-oxide-semiconductor. Probed adatoms with a high Pauling electronegativity, Ag and Au, unexpectedly donate charge to the contacted As/Ga atoms of as-grown α2 GaAs(001)-2 × 4 surfaces. The GaAs surface atoms behave as charge acceptors, and if not properly passivated, they would trap those electrons accumulated at the oxide and semiconductor interface under a positive bias. The exemplified core-level spectra of the Al2O3/n-GaAs(001)-2 × 4 and the Al2O3/n-GaAs(001)-4 × 6 interfaces exhibit remnant of pristine surface As emission, thereby causing high frequency dispersion in the accumulation region. For the p-type GaAs, electrons under a negatively biased condition are expelled from the interface, thereby avoiding becoming trapped.

Calibration of Voltage Transformers and High- Voltage Capacitors at NIST

PubMed Central

Anderson, William E.

1989-01-01

The National Institute of Standards and Technology (NIST) calibration service for voltage transformers and high-voltage capacitors is described. The service for voltage transformers provides measurements of ratio correction factors and phase angles at primary voltages up to 170 kV and secondary voltages as low as 10 V at 60 Hz. Calibrations at frequencies from 50–400 Hz are available over a more limited voltage range. The service for high-voltage capacitors provides measurements of capacitance and dissipation factor at applied voltages ranging from 100 V to 170 kV at 60 Hz depending on the nominal capacitance. Calibrations over a reduced voltage range at other frequencies are also available. As in the case with voltage transformers, these voltage constraints are determined by the facilities at NIST. PMID:28053409

Frequency dispersion of capacitance-voltage characteristics in wide bandgap semiconductor-electrolyte junctions

NASA Astrophysics Data System (ADS)

Frolov, D. S.; Zubkov, V. I.

2016-12-01

The frequency dispersion of capacitance-voltage characteristics and derived charge carrier concentration with application to the junction between an electrolyte and wide band-gap semiconductors are investigated. To expand the measurement frequency range, the precision LCR-meter Agilent E4980A was connected to the electrochemical cell ECVPro Nanometrics via a specially designed switch unit. The influence of series resistance and degree of dopant ionization on the frequency dispersion of CV-measured characteristics are discussed. It was shown that in wide band-gap semiconductors one can get both total and ionized dopant concentration, depending on the test frequency choice for capacitance measurements.

Band-Pass Amplifier Without Discrete Reactance Elements

NASA Technical Reports Server (NTRS)

Kleinberg, L.

1984-01-01

Inherent or "natural" device capacitance exploited. Band-Pass Circuit has input impedance of equivalent circuit at frequencies much greater than operational-amplifier rolloff frequency. Apparent inductance and capacitance arise from combined effects of feedback and reactive component of amplifier gain in frequency range.

Geometric contribution leading to anomalous estimation of two-dimensional electron gas density in GaN based heterostructures

NASA Astrophysics Data System (ADS)

Upadhyay, Bhanu B.; Jha, Jaya; Takhar, Kuldeep; Ganguly, Swaroop; Saha, Dipankar

2018-05-01

We have observed that the estimation of two-dimensional electron gas density is dependent on the device geometry. The geometric contribution leads to the anomalous estimation of the GaN based heterostructure properties. The observed discrepancy is found to originate from the anomalous area dependent capacitance of GaN based Schottky diodes, which is an integral part of the high electron mobility transistors. The areal capacitance density is found to increase for smaller radii Schottky diodes, contrary to a constant as expected intuitively. The capacitance is found to follow a second order polynomial on the radius of all the bias voltages and frequencies considered here. In addition to the quadratic dependency corresponding to the areal component, the linear dependency indicates a peripheral component. It is further observed that the peripheral to areal contribution is inversely proportional to the radius confirming the periphery as the location of the additional capacitance. The peripheral component is found to be frequency dependent and tends to saturate to a lower value for measurements at a high frequency. In addition, the peripheral component is found to vanish when the surface is passivated by a combination of N2 and O2 plasma treatments. The cumulative surface state density per unit length of the perimeter of the Schottky diodes as obtained by the integrated response over the distance between the ohmic and Schottky contacts is found to be 2.75 × 1010 cm-1.

Particle-in-cell and global simulations of α to γ transition in atmospheric pressure Penning-dominated capacitive discharges

NASA Astrophysics Data System (ADS)

Kawamura, E.; Lieberman, M. A.; Lichtenberg, A. J.; Chabert, P.; Lazzaroni, C.

2014-06-01

Atmospheric pressure radio-frequency (rf) capacitive micro-discharges are of interest due to emerging applications, especially in the bio-medical field. A previous global model did not consider high-power phenomena such as sheath multiplication, thus limiting its applicability to the lower power range. To overcome this, we use one-dimensional particle-in-cell (PIC) simulations of atmospheric He/0.1% N2 capacitive discharges over a wide range of currents and frequencies to guide the development of a more general global model which is also valid at higher powers. The new model includes sheath multiplication and two classes of electrons: the higher temperature ‘hot’ electrons associated with the sheaths, and the cooler ‘warm’ electrons associated with the bulk. The electric field and the electron power balance are solved analytically to determine the time-varying hot and warm temperatures and the effective rate coefficients. The particle balance equations are integrated numerically to determine the species densities. The model and PIC results are compared, showing reasonable agreement over the range of currents and frequencies studied. They indicate a transition from an α mode at low power characterized by relatively high electron temperature Te with a near uniform profile to a γ mode at high power with a Te profile strongly depressed in the bulk plasma. The transition is accompanied by an increase in density and a decrease in sheath widths. The current and frequency scalings of the model are confirmed by the PIC simulations.

A Charge-Based Low-Power High-SNR Capacitive Sensing Interface Circuit

PubMed Central

Peng, Sheng-Yu; Qureshi, Muhammad S.; Hasler, Paul E.; Basu, Arindam; Degertekin, F. L.

2008-01-01

This paper describes a low-power approach to capacitive sensing that achieves a high signal-to-noise ratio. The circuit is composed of a capacitive feedback charge amplifier and a charge adaptation circuit. Without the adaptation circuit, the charge amplifier only consumes 1 μW to achieve the audio band SNR of 69.34dB. An adaptation scheme using Fowler-Nordheim tunneling and channel hot electron injection mechanisms to stabilize the DC output voltage is demonstrated. This scheme provides a very low frequency pole at 0.2Hz. The measured noise spectrums show that this slow-time scale adaptation does not degrade the circuit performance. The DC path can also be provided by a large feedback resistance without causing extra power consumption. A charge amplifier with a MOS-bipolar pseudo-resistor feedback scheme is interfaced with a capacitive micromachined ultrasonic transducer to demonstrate the feasibility of this approach for ultrasound applications. PMID:18787650

Experimental observation of standing wave effect in low-pressure very-high-frequency capacitive discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yong-Xin; Gao, Fei; Liu, Jia

2014-07-28

Radial uniformity measurements of plasma density were carried out by using a floating double probe in a cylindrical (21 cm in electrode diameter) capacitive discharge reactor driven over a wide range of frequencies (27–220 MHz). At low rf power, a multiple-node structure of standing wave effect was observed at 130 MHz. The secondary density peak caused by the standing wave effect became pronounced and shifts toward the axis as the driving frequency further to increase, indicative of a much more shortened standing-wave wavelength. With increasing rf power, the secondary density peak shift toward the radial edge, namely, the standing-wave wavelength was increased,more » in good qualitative agreement with the previous theory and simulation results. At higher pressures and high frequencies, the rf power was primarily deposited at the periphery of the electrode, due to the fact that the waves were strongly damped as they propagated from the discharge edge into the center.« less

Solid structures with bioorganic films on silicon

NASA Astrophysics Data System (ADS)

Tutov, E. A.

2012-06-01

The electrophysical parameters of ovalbumin/silicon and propolis/silicon heterostructures are studied using impedance spectroscopy and high-frequency capacitance-voltage characteristics under water vapor sorption conditions.

A Study on the Transient Behavior of Pulse Modulated Dual-Frequency Capacitive Discharges based on Circuit Analysis

NASA Astrophysics Data System (ADS)

Na, Byungkeun; Bae, Inshik; Park, Gi Jung; Chang, Hong-Young

2016-09-01

Multi-frequency capacitively coupled plasma (CCP) has been studied to independently control the ion energy and the ion flux; pulsing technique is used to reduce the electron temperature and finally the charging effects. The use of these techniques is a key to high aspect ratio contact (HARC) etching in the recent semiconductor processing. In this study, the characteristics of pulsed dual frequency (DF) CCP is investigated. Two separate powers of 3 MHz and 40 MHz are delivered to the powered electrode of an asymmetric CCP, and each frequency is modulated by an external 1 kHz pulse. Due to the complexity of the RF compensation in DF CCP, the characteristics of the plasma and the sheath are analyzed by high speed impedance measurement. The transient behavior of pulse modulated DF CCP is analyzed based on the result of continuous wave (CW) DF CCP. The optimized experimental condition for high ion energy will be presented. The difference between electronegative oxygen plasma and electropositive argon plasma is discussed as well.

Direct Current Contamination of Kilohertz Frequency Alternating Current Waveforms

PubMed Central

Franke, Manfred; Bhadra, Niloy; Bhadra, Narendra; Kilgore, Kevin

2014-01-01

Kilohertz Frequency Alternating Current (KHFAC) waveforms are being evaluated in a variety of physiological settings because of their potential to modulate neural activity uniquely when compared to frequencies in the sub-kilohertz range. However, the use of waveforms in this frequency range presents some unique challenges regarding the generator output. In this study we explored the possibility of undesirable contamination of the KHFAC waveforms by direct current (DC). We evaluated current- and voltage-controlled KHFAC waveform generators in configurations that included a capacitive coupling between generator and electrode, a resistive coupling and combinations of capacitive with inductive coupling. Our results demonstrate that both voltage- and current-controlled signal generators can unintentionally add DC-contamination to a KHFAC signal, and that capacitive coupling is not always sufficient to eliminate this contamination. We furthermore demonstrated that high value inductors, placed in parallel with the electrode, can be effective in eliminating DC-contamination irrespective of the type of stimulator, reducing the DC contamination to less than 1 μA. This study highlights the importance of carefully designing the electronic setup used in KHFAC studies and suggests specific testing that should be performed and reported in all studies that assess the neural response to KHFAC waveforms. PMID:24820914

A Power-Efficient Capacitive Read-Out Circuit With Parasitic-Cancellation for MEMS Cochlea Sensors.

PubMed

Wang, Shiwei; Koickal, Thomas Jacob; Hamilton, Alister; Mastropaolo, Enrico; Cheung, Rebecca; Abel, Andrew; Smith, Leslie S; Wang, Lei

2016-02-01

This paper proposes a solution for signal read-out in the MEMS cochlea sensors that have very small sensing capacitance and do not have differential sensing structures. The key challenge in such sensors is the significant signal degradation caused by the parasitic capacitance at the MEMS-CMOS interface. Therefore, a novel capacitive read-out circuit with parasitic-cancellation mechanism is developed; the equivalent input capacitance of the circuit is negative and can be adjusted to cancel the parasitic capacitance. Chip results prove that the use of parasitic-cancellation is able to increase the sensor sensitivity by 35 dB without consuming any extra power. In general, the circuit follows a low-degradation low-amplification approach which is more power-efficient than the traditional high-degradation high-amplification approach; it employs parasitic-cancellation to reduce the signal degradation and therefore a lower gain is required in the amplification stage. Besides, the chopper-stabilization technique is employed to effectively reduce the low-frequency circuit noise and DC offsets. As a result of these design considerations, the prototype chip demonstrates the capability of converting a 7.5 fF capacitance change of a 1-Volt-biased 0.5 pF capacitive sensor pair into a 0.745 V signal-conditioned output at the cost of only 165.2 μW power consumption.

Plasma inhomogeneities near the electrodes of a capacitively-coupled radio-frequency discharge containing dust particles

NASA Astrophysics Data System (ADS)

Tawidian, H.; Mikikian, M.; Couëdel, L.; Lecas, T.

2011-11-01

Small plasma spheroids are evidenced and analyzed in front of the electrodes of a capacitively-coupled radio-frequency discharge in which dust particles are growing. These regions are characterized by a spherical shape, a slightly enhanced luminosity and are related to instabilities induced by the presence of dust particles. Several types of behaviors are identified and particularly their chaotic appearance or disappearance and their rotational motion along the electrode periphery. Correlations with the unstable behavior of the global plasma glow are performed. These analyses are obtained thanks to high-speed imaging which is the only diagnostics able to evidence these plasma spheroids.

Nonlinear standing wave excitation by series resonance-enhanced harmonics in low pressure capacitive discharges

NASA Astrophysics Data System (ADS)

Lieberman, M. A.; Lichtenberg, A. J.; Kawamura, Emi; Marakhtanov, A. M.

2015-09-01

It is well known that standing waves having radially center-high rf voltage profiles exist in high frequency capacitive discharges. It is also known that in radially uniform discharges, the capacitive sheath nonlinearities excite strong nonlinear series resonance harmonics that enhance the electron power deposition. In this work, we consider the coupling of the series resonance-enhanced harmonics to the standing waves. A one-dimensional, asymmetric radial transmission line model is developed incorporating the wave and nonlinear sheath physics and a self-consistent dc potential. The resulting coupled pde equation set is solved numerically to determine the discharge voltages and currents. A 10 mT argon base case is chosen with plasma density 2 ×1016 m-3, gap width 2 cm and conducting electrode radius 15 cm, driven by a high frequency 500 V source with source resistance 0.5 ohms. We find that nearby resonances lead to an enhanced ratio of 4.5 of the electron power per unit area on axis, compared to the average. The radial dependence of electron power with frequency shows significant variations, with the central enhancement and sharpness of the spatial resonances depending in a complicated way on the harmonic structure. Work supported by DOE Fusion Energy Science Contract DE-SC000193 and by a gift from the Lam Research Corporation.

Maximizing the value of gate capacitance in field-effect devices using an organic interface layer

NASA Astrophysics Data System (ADS)

Kwok, H. L.

2015-12-01

Past research has confirmed the existence of negative capacitance in organics such as tris (8-Hydroxyquinoline) Aluminum (Alq3). This work explored using such an organic interface layer to enhance the channel voltage in the field-effect transistor (FET) thereby lowering the sub-threshold swing. In particular, if the values of the positive and negative gate capacitances are approximately equal, the composite negative capacitance will increase by orders of magnitude. One concern is the upper frequency limit (∼100 Hz) over which negative capacitance has been observed. Nonetheless, this frequency limit can be raised to kHz when the organic layer is subjected to a DC bias.

An in situ trap capacitance measurement and ion-trapping detection scheme for a Penning ion trap facility.

PubMed

Reza, Ashif; Banerjee, Kumardeb; Das, Parnika; Ray, Kalyankumar; Bandyopadhyay, Subhankar; Dam, Bivas

2017-03-01

This paper presents the design and implementation of an in situ measurement setup for the capacitance of a five electrode Penning ion trap (PIT) facility at room temperature. For implementing a high Q resonant circuit for the detection of trapped electrons/ions in a PIT, the value of the capacitance of the trap assembly is of prime importance. A tunable Colpitts oscillator followed by a unity gain buffer and a low pass filter is designed and successfully implemented for a two-fold purpose: in situ measurement of the trap capacitance when the electric and magnetic fields are turned off and also providing RF power at the desired frequency to the PIT for exciting the trapped ions and subsequent detection. The setup is tested for the in situ measurement of trap capacitance at room temperature and the results are found to comply with those obtained from measurements using a high Q parallel resonant circuit setup driven by a standard RF signal generator. The Colpitts oscillator is also tested successfully for supplying RF power to the high Q resonant circuit, which is required for the detection of trapped electrons/ions.

A Comparative Analysis of CMUT Receiving Architectures for the Design Optimization of Integrated Transceiver Front Ends.

PubMed

Sautto, Marco; Savoia, Alessandro Stuart; Quaglia, Fabio; Caliano, Giosue; Mazzanti, Andrea

2017-05-01

A formal comparison between fundamental RX amplifier configurations for capacitive micromachined ultrasonic transducers (CMUTs) is proposed in this paper. The impact on both RX and the pulse-echo frequency response and on the output SNR is thoroughly analyzed and discussed. It is shown that the resistive-feedback amplifier yields a bandpass RX frequency response, while both open-loop voltage and capacitive-feedback amplifiers exhibit a low-pass frequency response. For a given power dissipation, it is formally proved that a capacitive-feedback amplifier provides a remarkable SNR improvement against the commonly adopted resistive feedback stage, achieved at the expense of a reduced pulse-echo center frequency, making its use convenient in low-frequency and midfrequency ultrasound imaging applications. The advantage mostly comes from a much lower noise contributed by the active devices, especially with low- Q , broadband transducers. The results of the analysis are applied to the design of a CMUT front end in BIPOLAR-CMOS-DMOS Silicon-on-Insulator technology operating at 10-MHz center frequency. It comprises a low-power RX amplifier, a high-voltage Transmission/Reception switch, and a 100-V TX driver. Extensive electrical characterization, pulse-echo measurements, and imaging results are shown. Compared with previously reported CMUT front ends, this transceiver demonstrates the highest dynamic range and state-of-the-art noise performance with an RX amplifier power dissipation of 1 mW.

Design and test of a capacitance detection circuit based on a transimpedance amplifier

NASA Astrophysics Data System (ADS)

Linfeng, Mu; Wendong, Zhang; Changde, He; Rui, Zhang; Jinlong, Song; Chenyang, Xue

2015-07-01

This paper presents a transimpedance amplifier (TIA) capacitance detection circuit aimed at detecting micro-capacitance, which is caused by ultrasonic stimulation applied to the capacitive micro-machined ultrasonic transducer (CMUT). In the capacitance interface, a TIA is adopted to amplify the received signal with a center frequency of 400 kHz, and finally detect ultrasound pressure. The circuit has a strong anti-stray property and this paper also studies the calculation of compensation capacity in detail. To ensure high resolution, noise analysis is conducted. After optimization, the detected minimum ultrasound pressure is 2.1 Pa, which is two orders of magnitude higher than the former. The test results showed that the circuit was sensitive to changes in ultrasound pressure and the distance between the CMUT and stumbling block, which also successfully demonstrates the functionality of the developed TIA of the analog-front-end receiver. Project supported by the National Natural Science Foundation of China (No. 61127008) and the Subsidized Program of the National High Technology Research and Development Program of China (No. 2011AA040404).

Preamplifiers for non-contact capacitive biopotential measurements.

PubMed

Peng, GuoChen; Ignjatovic, Zeljko; Bocko, Mark F

2013-01-01

Non-contact biopotential sensing is an attractive measurement strategy for a number of health monitoring applications, primarily the ECG and the EEG. In all such applications a key technical challenge is the design of a low-noise trans-impedance preamplifier for the typically low-capacitance, high source impedance sensing electrodes. In this paper, we compare voltage and charge amplifier designs in terms of their common mode rejection ratio, noise performance, and frequency response. Both amplifier types employ the same operational-transconductance amplifier (OTA), which was fabricated in a 0.35 um CMOS process. The results show that a charge amplifier configuration has advantages for small electrode-to-subject coupling capacitance values (less than 10 pF--typical of noncontact electrodes) and that the voltage amplifier configuration has advantages for electrode capacitances above 10 pF.

ac impedance analysis of a Ni-Nb-Zr-H glassy alloy with femtofarad capacitance tunnels

NASA Astrophysics Data System (ADS)

Fukuhara, M.; Seto, M.; Inoue, A.

2010-01-01

A Nyquist diagram of a (Ni0.36Nb0.24Zr0.40)90H10 glassy alloy shows a semitrue circle, indicating that it is a conducting material with a total capacitance of 17.8 μF. The Bode plots showing the dependencies of its real and imaginary impedances, and phase on frequency suggest a simpler equivalent circuit having a resistor in parallel with a capacitor. Dividing the total capacitance (17.8 μF) by the capacitance of a single tunnel (0.9 fF), we deduced that this material has a high number of dielectric tunnels, which can be regarded as regular prisms separated from the electric-conducting distorted icosahedral Zr5Ni5Nb3 clusters by an average of 0.225 nm.

An integrated signal conditioner for high-frequency inductive position sensors

NASA Astrophysics Data System (ADS)

Rahal, Mohamad; Demosthenous, Andreas

2010-01-01

This paper describes the design, implementation and evaluation of a signal conditioner application-specific integrated circuit (ASIC) for high-frequency inductive non-contact position sensors. These sensors employ a radio frequency technology based on an antenna planar arrangement and a resonant target, have a high inherent resolution (0.1% of antenna length) and can measure target position over a wide distance range (<0.1 mm to >10 m). However, due to the relatively high-frequency excitation (1 MHz typically) and to the specific layouts of these sensors, there is unwanted capacitive coupling between the transmitter and receiver coils; this type of distortion reduces linearity and resolution. The ASIC, which is the first generation of its kind for this type of sensor, employs a differential mixer topology which suppresses the capacitive coupling offsets. The system architecture and circuit details are presented. The ASIC was fabricated in a 0.6 µm high-voltage CMOS technology occupying an area of 8 mm2. It dissipates about 30 mA from a 24 V power supply. The ASIC was tested with a high-frequency inductive position sensor (with an antenna length of 10.8 cm). The measured input-referred offset due to transmitter crosstalk is on average about 22 µV over a wide phase difference variation (-99° to +117°) between the transmitter and demodulating signals.

Enhancement of ohmic and stochastic heating by resonance effects in capacitive radio frequency discharges: a theoretical approach.

PubMed

Mussenbrock, T; Brinkmann, R P; Lieberman, M A; Lichtenberg, A J; Kawamura, E

2008-08-22

In low-pressure capacitive radio frequency discharges, two mechanisms of electron heating are dominant: (i) Ohmic heating due to collisions of electrons with neutrals of the background gas and (ii) stochastic heating due to momentum transfer from the oscillating boundary sheath. In this work we show by means of a nonlinear global model that the self-excitation of the plasma series resonance which arises in asymmetric capacitive discharges due to nonlinear interaction of plasma bulk and sheath significantly affects both Ohmic heating and stochastic heating. We observe that the series resonance effect increases the dissipation by factors of 2-5. We conclude that the nonlinear plasma dynamics should be taken into account in order to describe quantitatively correct electron heating in asymmetric capacitive radio frequency discharges.

A Compact Operational Amplifier with Load-Insensitive Stability Compensation for High-Precision Transducer Interface.

PubMed

Yu, Zhanghao; Yang, Xi; Chung, SungWon

2018-01-29

High-resolution electronic interface circuits for transducers with nonlinear capacitive impedance need an operational amplifier, which is stable for a wide range of load capacitance. Such operational amplifier in a conventional design requires a large area for compensation capacitors, increasing costs and limiting applications. In order to address this problem, we present a gain-boosted two-stage operational amplifier, whose frequency response compensation capacitor size is insensitive to the load capacitance and also orders of magnitude smaller compared to the conventional Miller-compensation capacitor that often dominates chip area. By exploiting pole-zero cancellation between a gain-boosting stage and the main amplifier stage, the compensation capacitor of the proposed operational amplifier becomes less dependent of load capacitance, so that it can also operate with a wide range of load capacitance. A prototype operational amplifier designed in 0.13-μm complementary metal-oxide-semiconductor (CMOS) with a 400-fF compensation capacitor occupies 900- μ m 2 chip area and achieves 0.022-2.78-MHz unity gain bandwidth and over 65 ∘ phase margin with a load capacitance of 0.1-15 nF. The prototype amplifier consumes 7.6 μ W from a single 1.0-V supply. For a given compensation capacitor size and a chip area, the prototype design demonstrates the best reported performance trade-off on unity gain bandwidth, maximum stable load capacitance, and power consumption.

Methods of fabricating applique circuits

DOEpatents

Dimos, Duane B.; Garino, Terry J.

1999-09-14

Applique circuits suitable for advanced packaging applications are introduced. These structures are particularly suited for the simple integration of large amounts (many nanoFarads) of capacitance into conventional integrated circuit and multichip packaging technology. In operation, applique circuits are bonded to the integrated circuit or other appropriate structure at the point where the capacitance is required, thereby minimizing the effects of parasitic coupling. An immediate application is to problems of noise reduction and control in modern high-frequency circuitry.

High quality factor graphene varactors for wireless sensing applications

NASA Astrophysics Data System (ADS)

Koester, Steven J.

2011-10-01

A graphene wireless sensor concept is described. By utilizing thin gate dielectrics, the capacitance in a metal-insulator-graphene structure varies with charge concentration through the quantum capacitance effect. Simulations using realistic structural and transport parameters predict quality factors, Q, >60 at 1 GHz. When placed in series with an ideal inductor, a resonant frequency tuning ratio of 25% (54%) is predicted for sense charge densities ranging from 0.32 to 1.6 μC/cm2 at an equivalent oxide thickness of 2.0 nm (0.5 nm). The resonant frequency has a temperature sensitivity, df/dT, less than 0.025%/K for sense charge densities >0.32 μC/cm2.

Admittance of multiterminal quantum Hall conductors at kilohertz frequencies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hernández, C.; Consejo, C.; Chaubet, C., E-mail: christophe.chaubet@univ-montp2.fr

2014-03-28

We present an experimental study of the low frequency admittance of quantum Hall conductors in the [100 Hz, 1 MHz] frequency range. We show that the frequency dependence of the admittance of the sample strongly depends on the topology of the contacts connections. Our experimental results are well explained within the Christen and Büttiker approach for finite frequency transport in quantum Hall edge channels taking into account the influence of the coaxial cables capacitance. In the Hall bar geometry, we demonstrate that there exists a configuration in which the cable capacitance does not influence the admittance measurement of the sample. In thismore » case, we measure the electrochemical capacitance of the sample and observe its dependence on the filling factor.« less

Electrical characterization of Bi1.50-xYxZn0.92Nb1.5O6.92 varactors

NASA Astrophysics Data System (ADS)

Qasrawi, A. F.; Muis, Khalil O. Abu; Rob, Osama H. Abu Al; Mergen, A.

2014-05-01

The electrical properties of yttrium doped bismuth zinc niobium oxide (BZN) pyrochlore ceramics are explored by means of temperature dependent electrical conductivity dielectric constant and capacitance spectra in the frequency range of 0-3 GHz. It is observed that the doped BZN exhibit a conductivity type conversion from intrinsic to extrinsic as the doping content increased from 0.04 to 0.06. The thermal energy bandgap of the intrinsic type is 3.45 eV. The pyrochlore is observed to exhibit a dielectric breakdown at 395 K. In addition, a negative capacitance (NC) spectrum with main resonance peak position of 23.2 MHz is detected. The NC effect is ascribed to the increased polarization and the availability of more free carriers in the device. When the NC signal amplitude is attenuated in the range of 0-20 dBm at 50 MHz and 150 MHz, wide tunability is monitored. Such characteristics of the Y-doped BZN are attractive for using them to cancel the positive parasitic capacitance of electronic circuits. The canceling of parasitic capacitance improves the high frequency performance of filter inductors and reduces the common mode noise of the resonance signal.

Frequency dispersion analysis of thin dielectric MOS capacitor in a five-element model

NASA Astrophysics Data System (ADS)

Zhang, Xizhen; Zhang, Sujuan; Zhu, Huichao; Pan, Xiuyu; Cheng, Chuanhui; Yu, Tao; Li, Xiangping; Cheng, Yi; Xing, Guichao; Zhang, Daming; Luo, Xixian; Chen, Baojiu

2018-02-01

An Al/ZrO2/IL/n-Si (IL: interface layer) MOS capacitor has been fabricated by metal organic decomposition of ZrO2 and thermal deposition Al. We have measured parallel capacitance (C m) and parallel resistance (R m) versus bias voltage curves (C m, R m-V) at different AC signal frequency (f), and C m, R m-f curves at different bias voltage. The curves of C m, R m-f measurements show obvious frequency dispersion in the range of 100 kHz-2 MHz. The energy band profile shows that a large voltage is applied on the ZrO2 layer and IL at accumulation, which suggests possible dielectric polarization processes by some traps in ZrO2 and IL. C m, R m-f data are used for frequency dispersion analysis. To exclude external frequency dispersion, we have extracted the parameters of C (real MOS capacitance), R p (parallel resistance), C IL (IL capacitance), R IL (IL resistance) and R s (Si resistance) in a five-element model by using a three-frequency method. We have analyzed intrinsic frequency dispersion of C, R p, C IL, R IL and R s by studying the dielectric characteristics and Si surface layer characteristics. At accumulation, the dispersion of C and R p is attributed to dielectric polarization such as dipolar orientation and oxide traps. The serious dispersion of C IL and R IL are relative to other dielectric polarization, such as border traps and fixed oxide traps. The dispersion of R s is mainly attributed to contact capacitance (C c) and contact resistance (R c). At depletion and inversion, the frequency dispersion of C, R p, C IL, R IL, and R s are mainly attributed to the depletion layer capacitance (C D). The interface trap capacitance (C it) and interface trap resistance (R it) are not dominant for the dispersion of C, R p, C IL, R IL, and R s.

Direct current contamination of kilohertz frequency alternating current waveforms.

PubMed

Franke, Manfred; Bhadra, Niloy; Bhadra, Narendra; Kilgore, Kevin

2014-07-30

Kilohertz frequency alternating current (KHFAC) waveforms are being evaluated in a variety of physiological settings because of their potential to modulate neural activity uniquely when compared to frequencies in the sub-kilohertz range. However, the use of waveforms in this frequency range presents some unique challenges regarding the generator output. In this study we explored the possibility of undesirable contamination of the KHFAC waveforms by direct current (DC). We evaluated current- and voltage-controlled KHFAC waveform generators in configurations that included a capacitive coupling between generator and electrode, a resistive coupling and combinations of capacitive with inductive coupling. Our results demonstrate that both voltage- and current-controlled signal generators can unintentionally add DC-contamination to a KHFAC signal, and that capacitive coupling is not always sufficient to eliminate this contamination. We furthermore demonstrated that high value inductors, placed in parallel with the electrode, can be effective in eliminating DC-contamination irrespective of the type of stimulator, reducing the DC contamination to less than 1 μA. This study highlights the importance of carefully designing the electronic setup used in KHFAC studies and suggests specific testing that should be performed and reported in all studies that assess the neural response to KHFAC waveforms. Published by Elsevier B.V.

Tunable ohmic environment using Josephson junction chains

NASA Astrophysics Data System (ADS)

Rastelli, Gianluca; Pop, Ioan M.

2018-05-01

We propose a scheme to implement a tunable, wide frequency-band dissipative environment using a double chain of Josephson junctions. The two parallel chains consist of identical superconducting quantum interference devices (SQUIDs), with magnetic-flux tunable inductance, coupled to each other at each node via a capacitance much larger than the junction capacitance. Thanks to this capacitive coupling, the system sustains electromagnetic modes with a wide frequency dispersion. The internal quality factor of the modes is maintained as high as possible, and the damping is introduced by a uniform coupling of the modes to a transmission line, itself connected to an amplification and readout circuit. For sufficiently long chains, containing several thousands of junctions, the resulting admittance is a smooth function versus frequency in the microwave domain, and its effective dissipation can be continuously monitored by recording the emitted radiation in the transmission line. We show that by varying in situ the SQUIDs' inductance, the double chain can operate as a tunable ohmic resistor in a frequency band spanning up to 1 GHz, with a resistance that can be swept through values comparable to the resistance quantum Rq=h /(4 e2) ≃6.5 kΩ . We argue that the circuit complexity is within reach using current Josephson junction technology.

Passive ultrasonics using sub-Nyquist sampling of high-frequency thermal-mechanical noise.

PubMed

Sabra, Karim G; Romberg, Justin; Lani, Shane; Degertekin, F Levent

2014-06-01

Monolithic integration of capacitive micromachined ultrasonic transducer arrays with low noise complementary metal oxide semiconductor electronics minimizes interconnect parasitics thus allowing the measurement of thermal-mechanical (TM) noise. This enables passive ultrasonics based on cross-correlations of diffuse TM noise to extract coherent ultrasonic waves propagating between receivers. However, synchronous recording of high-frequency TM noise puts stringent requirements on the analog to digital converter's sampling rate. To alleviate this restriction, high-frequency TM noise cross-correlations (12-25 MHz) were estimated instead using compressed measurements of TM noise which could be digitized at a sampling frequency lower than the Nyquist frequency.

Preamplifiers for non-contact capacitive biopotential measurements*

PubMed Central

Peng, GuoChen; Ignjatovic, Zeljko; Bocko, Mark F.

2014-01-01

Non-contact biopotential sensing is an attractive measurement strategy for a number of health monitoring applications, primarily the ECG and the EEG. In all such applications a key technical challenge is the design of a low-noise trans-impedance preamplifier for the typically low-capacitance, high source impedance sensing electrodes. In this paper, we compare voltage and charge amplifier designs in terms of their common mode rejection ratio, noise performance, and frequency response. Both amplifier types employ the same operational-transconductance amplifier (OTA), which was fabricated in a 0.35um CMOS process. The results show that a charge amplifier configuration has advantages for small electrode-to-subject coupling capacitance values (less than 10 pF - typical of noncontact electrodes) and that the voltage amplifier configuration has advantages for electrode capacitances above 10 pF. PMID:24109979

Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations

NASA Astrophysics Data System (ADS)

Zeng, Ke; Singisetti, Uttam

2017-09-01

The interface trap density (Dit) of the SiO2/β-Ga2O3 interface in ( 2 ¯ 01), (010), and (001) orientations is obtained by the Hi-Lo method with the low frequency capacitance measured using the Quasi-Static Capacitance-Voltage (QSCV) technique. QSCV measurements are carried out at higher temperatures to increase the measured energy range of Dit in the bandgap. At room temperature, higher Dit is observed near the band edge for all three orientations. The measurement at higher temperatures led to an annealing effect that reduced the Dit value for all samples. Comparison with the conductance method and frequency dispersion of the capacitance suggests that the traps at the band edge are slow traps which respond to low frequency signals.

A numerical method for measuring capacitive soft sensors through one channel

NASA Astrophysics Data System (ADS)

Tairych, Andreas; Anderson, Iain A.

2018-03-01

Soft capacitive stretch sensors are well suited for unobtrusive wearable body motion capture. Conventional sensing methods measure sensor capacitances through separate channels. In sensing garments with many sensors, this results in high wiring complexity, and a large footprint of rigid sensing circuit boards. We have developed a more efficient sensing method that detects multiple sensors through only one channel, and one set of wires. It is based on a R-C transmission line assembled from capacitive conductive fabric stretch sensors, and external resistors. The unknown capacitances are identified by solving a system of nonlinear equations. These equations are established by modelling and continuously measuring transmission line reactances at different frequencies. Solving these equations numerically with a Newton-Raphson solver for the unknown capacitances enables real time reading of all sensors. The method was verified with a prototype comprising three sensors that is capable of detecting both individually and simultaneously stretched sensors. Instead of using three channels and six wires to detect the sensors, the task was achieved with only one channel and two wires.

Frequency domain analysis of droplet-based electrostatic transducers

NASA Astrophysics Data System (ADS)

Allegretto, Graham; Dobashi, Yuta; Dixon, Katelyn; Wyss, Justin; Yao, Dickson; Madden, John D. W.

2018-07-01

Squeezing a water droplet between two electrodes can generate a potential difference by converting some of the mechanical energy in vibrations into electrical energy. By utilizing the high capacitance inherent to electric double layers, and the surface charging at a polymer/water interface, we demonstrate a sensor that generates up to 892 mV peak-to-peak between 1 and 100 Hz, in response to a 250 μm deformation. This frequency response is described and explained using a linearized model in which the interfacial charge acts as the priming voltage, removing the need for external charging normally required in capacitive generators. The model suggests how to design the cell for maximum power output and provides an intuitive understanding of the high pass nature of the sensor. It successfully predicts the point of maximum power transfer.

Electrocapillarity and zero-frequency differential capacitance at the interface between mercury and ionic liquids measured using the pendant drop method.

PubMed

Nishi, Naoya; Hashimoto, Atsunori; Minami, Eiji; Sakka, Tetsuo

2015-02-21

The structure of ionic liquids (ILs) at the electrochemical IL|Hg interface has been studied using the pendant drop method. From the electrocapillarity (potential dependence of interfacial tension) differential capacitance (Cd) at zero frequency (in other words, static differential capacitance or differential capacitance in equilibrium) has been evaluated. The potential dependence of zero-frequency Cd at the IL|Hg interface exhibits one or two local maxima near the potential of zero charge (Epzc), depending on the cation of the ILs. For 1-ethyl-3-methylimidazolium tetrafluoroborate, an IL with the cation having a short alkyl chain, the Cdvs. potential curve has one local maximum whereas another IL, 1-octyl-3-methylimidazolium tetrafluoroborate, with the cation having a long alkyl chain, shows two maxima. These behaviors of zero-frequency Cd agree with prediction by recent theoretical and simulation studies for the electrical double layer in ILs. At negative and positive potentials far from Epzc, the zero-frequency Cd increases for both the ILs studied. The increase in zero-frequency Cd is attributable to the densification of ionic layers in the electrical double layer.

An investigation of Ar metastable state density in low pressure dual-frequency capacitively coupled argon and argon-diluted plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Wen-Yao; Xu, Yong, E-mail: yongxu@dlut.edu.cn; Peng, Fei

2015-01-14

An tunable diode laser absorption spectroscopy has been used to determine the Ar*({sup 3}P{sub 2}) and Ar*({sup 3}P{sub 0}) metastable atoms densities in dual-frequency capacitively coupled plasmas. The effects of different control parameters, such as high-frequency power, gas pressure and content of Ar, on the densities of two metastable atoms and electron density were discussed in single-frequency and dual-frequency Ar discharges, respectively. Particularly, the effects of the pressure on the axial profile of the electron and Ar metastable state densities were also discussed. Furthermore, a simple rate model was employed and its results were compared with experiments to analyze themore » main production and loss processes of Ar metastable states. It is found that Ar metastable state is mainly produced by electron impact excitation from the ground state, and decayed by diffusion and collision quenching with electrons and neutral molecules. Besides, the addition of CF{sub 4} was found to significantly increase the metastable destruction rate by the CF{sub 4} quenching, especially for large CF{sub 4} content and high pressure, it becomes the dominant depopulation process.« less

Leakage current and capacitance characteristics of Si/SiO2/Si single-barrier varactor

NASA Astrophysics Data System (ADS)

Mamor, M.; Fu, Y.; Nur, O.; Willander, M.; Bengtsson, S.

We investigate, both experimentally and theoretically, current and capacitance (I-V/C-V) characteristics and the device performance of Si/SiO2/Si single-barrier varactor diodes (SBVs). Two diodes were fabricated with different SiO2 layer thicknesses using the state-of-the-art wafer bonding technique. The devices have very low leakage currents (about 5×10-2 and 1.8×10-2 mA/mm2) and intrinsic capacitance levels of typically 1.5 and 50 nF/mm2 for diodes with 5-nm and 20-nm oxide layers, respectively. With the present device physical parameters (25-mm2 device area, 760-μm modulation layer thickness and 1015-cm-3 doping level), the estimated cut-off frequency is about 5×107 Hz. With the physical parameters of the present existing III-V triplers, the cut-off frequency of our Si-based SBV can be as high as 0.5 THz.

Method of recording bioelectrical signals using a capacitive coupling

NASA Astrophysics Data System (ADS)

Simon, V. A.; Gerasimov, V. A.; Kostrin, D. K.; Selivanov, L. M.; Uhov, A. A.

2017-11-01

In this article a technique for the bioelectrical signals acquisition by means of the capacitive sensors is described. A feedback loop for the ultra-high impedance biasing of the input instrumentation amplifier, which provides receiving of the electrical cardiac signal (ECS) through a capacitive coupling, is proposed. The mains 50/60 Hz noise is suppressed by a narrow-band stop filter with an independent notch frequency and quality factor tuning. Filter output is attached to a ΣΔ analog-to-digital converter (ADC), which acquires the filtered signal with a 24-bit resolution. Signal processing board is connected through universal serial bus interface to a personal computer, where ECS in a digital form is recorded and processed.

Influence of the Compositional Grading on Concentration of Majority Charge Carriers in Near-Surface Layers of n(p)-HgCdTe Grown by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.

2018-02-01

The capacitive characteristics of metal-insulator-semiconductor (MIS) structures based on the compositionally graded Hg1-xCdxTe created by molecular beam epitaxy have been experimentally investigated in a wide temperature range (8-77 K). A program has been developed for numerical simulation of ideal capacitance-voltage (C-V) characteristics in the low-frequency and high-frequency approximations. The concentrations of the majority carriers in the near-surface semiconductor layer are determined from the values of the capacitances in the minima of low-frequency C-V curves. For MIS structures based on p-Hg1-xCdxTe, the effect of the presence of the compositionally graded layer on the hole concentration in the near-surface semiconductor layer, determined from capacitive measurements, has not been established. Perhaps this is due to the fact that the concentration of holes in the near-surface layer largely depends on the type of dielectric coating and the regimes of its application. For MIS structures based on n-Hg1-x Cd x Te (x = 0.22-0.23) without a graded-gap layer, the electron concentration determined by the proposed method is close to the average concentration determined by the Hall measurements. The electron concentration in the near-surface semiconductor layer of the compositionally graded n-Hg1-x Cd x Te (x = 0.22-0.23) found from the minimum capacitance value is much higher than the average electron concentration determined by the Hall measurements. The results are qualitatively explained by the creation of additional intrinsic donor-type defects in the near-surface compositionally graded layer of n-Hg1-x Cd x Te.

Role of geometric parameters in electrical measurements of insulating thin films deposited on a conductive substrate

NASA Astrophysics Data System (ADS)

Kumar, S.; Gerhardt, R. A.

2012-03-01

The effects of film thickness, electrode size and substrate thickness on the impedance parameters of alternating frequency dielectric measurements of insulating thin films deposited on conductive substrates were studied through parametric finite-element simulations. The quasi-static forms of Maxwell's electromagnetic equations in a time harmonic mode were solved using COMSOL Multiphysics® for several types of 2D models (linear and axisymmetric). The full 2D model deals with a configuration in which the impedance is measured between two surface electrodes on top of a film deposited on a conductive substrate. For the simplified 2D models, the conductive substrate is ignored and the two electrodes are placed on the top and bottom of the film. By comparing the full model and the simplified models, approximations and generalizations are deduced. For highly insulating films, such as the case of insulating SiO2 films on a conducting Si substrate, even the simplified models predict accurate capacitance values at all frequencies. However, the edge effects on the capacitance are found to be significant when the film thickness increases and/or the top electrode contact size decreases. The thickness of the substrate affects predominantly the resistive components of the dielectric response while having no significant effect on the capacitive components. Changing the electrode contact size or the film thickness determines the specific values of the measured resistance or capacitance while the material time constant remains the same, and thus this affects the frequency dependence that is able to be detected. This work highlights the importance of keeping in mind the film thickness and electrode contact size for the correct interpretation of the measured dielectric properties of micro/nanoscale structures that are often investigated using nanoscale capacitance measurements.

Design of capacitive sensor for water level measurement

NASA Astrophysics Data System (ADS)

Qurthobi, A.; Iskandar, R. F.; Krisnatal, A.; Weldzikarvina

2016-11-01

Capacitive sensor for water level detection has been fabricated. It has, typically, high-impedance sensor, particularly at low frequencies, as clear from the impedance (reactance) expression for a capacitor. Also, capacitive sensor is a noncontacting device in the common usage. In this research, water level sensor based on capacitive principal created using two copper plates with height (h), width (b), and distance (l) between two plates, respectively, 0.040 m, 0.015 m, and 0.010 m. 5 V pp 3 kHz AC signal is used as input signal for the system. Dielectric constant between two plates is proportional to water level. Hence, it can be used to determine water level from electrical characteristic as it inversely proportional to sensor impedance. Linearization, inverting amplifier, and rectifier circuits are used as signal conditioning for the system. Based on conducted experiment, the relationship between water level (x), capacitance (C), and output voltage (Vdc ) can be expressed as C(x) = 2.756x + 0.333 nF and Vdc (x) = 15.755 + 0.316 V.

Wireless Capacitive Pressure Sensor With Directional RF Chip Antenna for High Temperature Environments

NASA Technical Reports Server (NTRS)

Scardelletti, M. C.; Jordan, J. L.; Ponchak, G. E.; Zorman, C. A.

2015-01-01

This paper presents the design, fabrication and characterization of a wireless capacitive pressure sensor with directional RF chip antenna that is envisioned for the health monitoring of aircraft engines operating in harsh environments. The sensing system is characterized from room temperature (25 C) to 300 C for a pressure range from 0 to 100 psi. The wireless pressure system consists of a Clapp-type oscillator design with a capacitive MEMS pressure sensor located in the LC-tank circuit of the oscillator. Therefore, as the pressure of the aircraft engine changes, so does the output resonant frequency of the sensing system. A chip antenna is integrated to transmit the system output to a receive antenna 10 m away.The design frequency of the wireless pressure sensor is 127 MHz and a 2 increase in resonant frequency over the temperature range of 25 to 300 C from 0 to 100 psi is observed. The phase noise is less than minus 30 dBcHz at the 1 kHz offset and decreases to less than minus 80 dBcHz at 10 kHz over the entire temperature range. The RF radiation patterns for two cuts of the wireless system have been measured and show that the system is highly directional and the MEMS pressure sensor is extremely linear from 0 to 100 psi.

Electrical detection of DNA hybridization: three extraction techniques based on interdigitated Al/Al2O3 capacitors.

PubMed

Moreno-Hagelsieb, L; Foultier, B; Laurent, G; Pampin, R; Remacle, J; Raskin, J-P; Flandre, D

2007-04-15

Based on interdigitated aluminum electrodes covered with Al(2)O(3) and silver precipitation via biotin-antibody coupled gold nano-labels as signal enhancement, three complementary electrical methods were used and compared to detect the hybridization of target DNA for concentrations down to the 50 pM of a PCR product from cytochrome P450 2b2 gene. Human hepatic cytochrome P450 (CYP) enzymes participate in detoxification metabolism of xenobiotics. Therefore, determination of mutational status of P450 gene in a patient could have a significant impact on the choice of a medical treatment. Our three electrical extraction procedures are performed on the same interdigitated capacitive sensor lying on a passivated silicon substrate and consist in the measurement of respectively the low-frequency inter-electrodes capacitance, the high-frequency self-resonance frequency, and the equivalent MOS capacitance between the short-circuited electrodes and the backside metallization of the silicon substrate. This study is the first of its kind as it opens the way for correlation studies and noise reduction techniques based on multiple electrical measurements of the same DNA hybridization event with a single sensor.

A method for computing ion energy distributions for multifrequency capacitive discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Alan C. F.; Lieberman, M. A.; Verboncoeur, J. P.

2007-03-01

The ion energy distribution (IED) at a surface is an important parameter for processing in multiple radio frequency driven capacitive discharges. An analytical model is developed for the IED in a low pressure discharge based on a linear transfer function that relates the time-varying sheath voltage to the time-varying ion energy response at the surface. This model is in good agreement with particle-in-cell simulations over a wide range of single, dual, and triple frequency driven capacitive discharge excitations.

Fast 2D fluid-analytical simulation of ion energy distributions and electromagnetic effects in multi-frequency capacitive discharges

NASA Astrophysics Data System (ADS)

Kawamura, E.; Lieberman, M. A.; Graves, D. B.

2014-12-01

A fast 2D axisymmetric fluid-analytical plasma reactor model using the finite elements simulation tool COMSOL is interfaced with a 1D particle-in-cell (PIC) code to study ion energy distributions (IEDs) in multi-frequency capacitive argon discharges. A bulk fluid plasma model, which solves the time-dependent plasma fluid equations for the ion continuity and electron energy balance, is coupled with an analytical sheath model, which solves for the sheath parameters. The time-independent Helmholtz equation is used to solve for the fields and a gas flow model solves for the steady-state pressure, temperature and velocity of the neutrals. The results of the fluid-analytical model are used as inputs to a PIC simulation of the sheath region of the discharge to obtain the IEDs at the target electrode. Each 2D fluid-analytical-PIC simulation on a moderate 2.2 GHz CPU workstation with 8 GB of memory took about 15-20 min. The multi-frequency 2D fluid-analytical model was compared to 1D PIC simulations of a symmetric parallel-plate discharge, showing good agreement. We also conducted fluid-analytical simulations of a multi-frequency argon capacitively coupled plasma (CCP) with a typical asymmetric reactor geometry at 2/60/162 MHz. The low frequency 2 MHz power controlled the sheath width and sheath voltage while the high frequencies controlled the plasma production. A standing wave was observable at the highest frequency of 162 MHz. We noticed that adding 2 MHz power to a 60 MHz discharge or 162 MHz to a dual frequency 2 MHz/60 MHz discharge can enhance the plasma uniformity. We found that multiple frequencies were not only useful for controlling IEDs but also plasma uniformity in CCP reactors.

Artificial sensory hairs based on the flow sensitive receptor hairs of crickets

NASA Astrophysics Data System (ADS)

Dijkstra, M.; van Baar, J. J.; Wiegerink, R. J.; Lammerink, T. S. J.; de Boer, J. H.; Krijnen, G. J. M.

2005-07-01

This paper presents the modelling, design, fabrication and characterization of flow sensors based on the wind-receptor hairs of crickets. Cricket sensory hairs are highly sensitive to drag-forces exerted on the hair shaft. Artificial sensory hairs have been realized in SU-8 on suspended SixNy membranes. The movement of the membranes is detected capacitively. Capacitance versus voltage, frequency dependence and directional sensitivity measurements have been successfully carried out on fabricated sensor arrays, showing the viability of the concept.

Low-cost FM oscillator for capacitance type of blade tip clearance measurement system

NASA Technical Reports Server (NTRS)

Barranger, John P.

1987-01-01

The frequency-modulated (FM) oscillator described is part of a blade tip clearance measurement system that meets the needs of a wide class of fans, compressors, and turbines. As a result of advancements in the technology of ultra-high-frequency operational amplifiers, the FM oscillator requires only a single low-cost integrated circuit. Its carrier frequency is 42.8 MHz when it is used with an integrated probe and connecting cable assembly consisting of a 0.81 cm diameter engine-mounted capacitance probe and a 61 cm long hermetically sealed coaxial cable. A complete circuit analysis is given, including amplifier negative resistance characteristics. An error analysis of environmentally induced effects is also derived, and an error-correcting technique is proposed. The oscillator can be calibrated in the static mode and has a negative peak frequency deviation of 400 kHz for a rotor blade thickness of 1.2 mm. High-temperature performance tests of the probe and 13 cm of the adjacent cable show good accuracy up to 600 C, the maximum permissible seal temperature. The major source of error is the residual FM oscillator noise, which produces a clearance error of + or - 10 microns at a clearance of 0.5 mm. The oscillator electronics accommodates the high rotor speeds associated with small engines, the signals from which may have frequency components as high as 1 MHz.

Comparison of the frequency response characteristics of catheter-mounted piezoelectric and micromanometric phonotransducers.

PubMed

Garcia, J C; Layton, S A; Rubal, B J

1989-05-01

This study compares the frequency response characteristics of catheter-mounted piezoelectric sound transducers with micromanometric transducers. The tip of a 8F catheter with two piezoelectric transducers and two micromanometers was inserted into a water-filled chamber that had a speaker fixed at one end. The speaker was driven by a power amplifier and sine wave generator. The outputs of the transducers were connected to a low-level amplifier. The piezoelectric transducer behaved as a tunable high-pass filter that could be modified by altering the input impedance of the low level amplifier; the frequency response characteristics were examined at five input impedances ranging from 0.96 to 11.8 megohms. The peak-to-peak outputs of the piezoelectric and pressure transducers were recorded at frequency ranges from DC to 1 kHz with a wide-band oscilloscope. The ratio of the outputs from the piezotransducer and micromanometer (Vph/Vpr) was plotted vs. frequency for each input impedance and analyzed to determine the piezotransducer's output resistance and equivalent capacitance; roll-off frequencies were then calculated. The equivalent capacitance of the piezo-element was determined to be 500-700 picofarads. Series capacitance acted with network resistance to produce a predictable frequency-dependent change in signal amplitude and phase angle. The inherent noise of the pressure transducer was found to be approximately 0.2 mm Hg, while the noise of the piezoelectric transducer was immeasurably low. The piezoelectric phonotransducers were superior to micromanometer transducers in their higher gain and lower noise, suggesting that these transducers may prove useful to physiologic and clinical studies for measuring intravascular sound.

Temperature dependence of frequency response characteristics in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Lu, Xubing; Minari, Takeo; Liu, Chuan; Kumatani, Akichika; Liu, J.-M.; Tsukagoshi, Kazuhito

2012-04-01

The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characteristics in pentacene-based organic field-effect transistors and metal-insulator-semiconductor capacitors. As the temperature decreased, the capacitance-voltage characteristics showed large frequency dispersion and a negative shift in the flat-band voltage at high frequencies. The cutoff frequency shows Arrhenius-type temperature dependence with different activation energy values for various gate voltages. These phenomena demonstrate the effects of charge trapping on the frequency response characteristics, since decreased mobility prevents a fast charge response for alternating current signals at low temperatures.

A compact 100 kV high voltage glycol capacitor.

PubMed

Wang, Langning; Liu, Jinliang; Feng, Jiahuai

2015-01-01

A high voltage capacitor is described in this paper. The capacitor uses glycerol as energy storage medium, has a large capacitance close to 1 nF, can hold off voltages of up to 100 kV for μs charging time. Allowing for low inductance, the capacitor electrode is designed as coaxial structure, which is different from the common structure of the ceramic capacitor. With a steady capacitance at different frequencies and a high hold-off voltage of up to 100 kV, the glycol capacitor design provides a potential substitute for the ceramic capacitors in pulse-forming network modulator to generate high voltage pulses with a width longer than 100 ns.

Observation of the standing wave effect in large-area, very-high-frequency capacitively coupled plasmas by using a fiber Bragg grating sensor

NASA Astrophysics Data System (ADS)

Han, Dao-Man; Liu, Yong-Xin; Gao, Fei; Wang, Xiang-Yu; Li, Ang; Xu, Jun; Jing, Zhen-Guo; Wang, You-Nian

2018-06-01

The large-area capacitive discharges driven at very high frequencies have been attracting much attention due to their wide applications in material etching and thin film deposition. However, in the regime, the standing wave effect (SWE) becomes a major limitation for plasma material processing uniformity. In this work, a fiber Bragg grating sensor was utilized for the observation of the SWE in a large-area capacitive discharge reactor by measuring the radial distribution of the neutral gas temperature T g. The influences of the RF power and the working pressure on the radial profiles of T g were studied. At a higher frequency (100 MHz) and a lower pressure (5 Pa), T g presents a center-peaked radial distribution, indicating a significant SWE. As the RF power increases, the central peak of T g becomes more evident due to the enhanced SWE. By contrast, at 100 MHz and a higher pressure (40 Pa), the radial distribution of T g shows an evident peak at the electrode edge and T g decays dramatically towards the discharge center because the electromagnetic waves are strongly damped as they are propagating from the edge to the center. At a lower frequency (27 MHz), only edge-high profiles of T g are observed for various pressures. For the sake of a comparison, a hairpin resonance probe was used to measure the radial distributions of the plasma density n p under the same condition. The radial profiles of T g are found to generally resemble those of n p under various conditions. Based on the experimental results, the neutral gas heating mechanism was analyzed.

Multi-Channel Capacitive Sensor Arrays

PubMed Central

Wang, Bingnan; Long, Jiang; Teo, Koon Hoo

2016-01-01

In this paper, multi-channel capacitive sensor arrays based on microstrip band-stop filters are studied. The sensor arrays can be used to detect the proximity of objects at different positions and directions. Each capacitive sensing structure in the array is connected to an inductive element to form resonance at different frequencies. The resonances are designed to be isolated in the frequency spectrum, such that the change in one channel does not affect resonances at other channels. The inductive element associated with each capacitive sensor can be surface-mounted inductors, integrated microstrip inductors or metamaterial-inspired structures. We show that by using metamaterial split-ring structures coupled to a microstrip line, the quality factor of each resonance can be greatly improved compared to conventional surface-mounted or microstrip meander inductors. With such a microstrip-coupled split-ring design, more sensing elements can be integrated in the same frequency spectrum, and the sensitivity can be greatly improved. PMID:26821023

Laboratory evaluation of dual-frequency multisensor capacitance probes to monitor soil water and salinity

USDA-ARS?s Scientific Manuscript database

Real-time information on salinity levels and transport of fertilizers are generally missing from soil profile knowledge bases. A dual-frequency multisensor capacitance probe (MCP) is now commercially available for sandy soils that simultaneously monitor volumetric soil water content (VWC, ') and sa...

Electromagnetic receiver with capacitive electrodes and triaxial induction coil for tunnel exploration

NASA Astrophysics Data System (ADS)

Kai, Chen; Sheng, Jin; Wang, Shun

2017-09-01

A new type of electromagnetic (EM) receiver has been developed by integrating four capacitive electrodes and a triaxial induction coil with an advanced data logger for tunnel exploration. The new EM receiver can conduct EM observations in tunnels, which is one of the principal goals of surface-tunnel-borehole EM detection for deep ore deposit mapping. The use of capacitive electrodes enables us to record the electrical field (E-field) signals from hard rock surfaces, which are high-resistance terrains. A compact triaxial induction coil integrates three independent induction coils for narrow-tunnel exploration applications. A low-time-drift-error clock source is developed for tunnel applications where GPS signals are unavailable. The three main components of our tunnel EM receiver are: (1) four capacitive electrodes for measuring the E-field signal without digging in hard rock regions; (2) a triaxial induction coil sensor for audio-frequency magnetotelluric and controlled-source audio-frequency magnetotelluric signal measurements; and (3) a data logger that allows us to record five-component MT signals with low noise levels, low time-drift-error for the clock source, and high dynamic range. The proposed tunnel EM receiver was successfully deployed in a mine that exhibited with typical noise characteristics. [Figure not available: see fulltext. Caption: The new EM receiver can conduct EM observations in tunnels, which is one of the principal goals of the surface-tunnel-borehole EM (STBEM) detection for deep ore deposit mapping. The use of a capacitive electrode enables us to record the electrical field (E-field) signals from hard rock surfaces. A compact triaxial induction coil integrated three induction coils, for narrow-tunnel applications.

A Compact Operational Amplifier with Load-Insensitive Stability Compensation for High-Precision Transducer Interface

PubMed Central

Yang, Xi

2018-01-01

High-resolution electronic interface circuits for transducers with nonlinear capacitive impedance need an operational amplifier, which is stable for a wide range of load capacitance. Such operational amplifier in a conventional design requires a large area for compensation capacitors, increasing costs and limiting applications. In order to address this problem, we present a gain-boosted two-stage operational amplifier, whose frequency response compensation capacitor size is insensitive to the load capacitance and also orders of magnitude smaller compared to the conventional Miller-compensation capacitor that often dominates chip area. By exploiting pole-zero cancellation between a gain-boosting stage and the main amplifier stage, the compensation capacitor of the proposed operational amplifier becomes less dependent of load capacitance, so that it can also operate with a wide range of load capacitance. A prototype operational amplifier designed in 0.13-μm complementary metal–oxide–semiconductor (CMOS) with a 400-fF compensation capacitor occupies 900-μm2 chip area and achieves 0.022–2.78-MHz unity gain bandwidth and over 65∘ phase margin with a load capacitance of 0.1–15 nF. The prototype amplifier consumes 7.6 μW from a single 1.0-V supply. For a given compensation capacitor size and a chip area, the prototype design demonstrates the best reported performance trade-off on unity gain bandwidth, maximum stable load capacitance, and power consumption. PMID:29382183

The frequency dependence of the discharge properties in a capacitively coupled oxygen discharge

NASA Astrophysics Data System (ADS)

Gudmundsson, J. T.; Snorrason, D. I.; Hannesdottir, H.

2018-02-01

We use the one-dimensional object-oriented particle-in-cell Monte Carlo collision code oopd1 to explore the evolution of the charged particle density profiles, electron heating mechanism, the electron energy probability function (EEPF), and the ion energy distribution in a single frequency capacitively coupled oxygen discharge, with driving frequency in the range 12-100 MHz. At a low driving frequency and low pressure (5 and 10 mTorr), a combination of stochastic (α-mode) and drift ambipolar (DA) heating in the bulk plasma (the electronegative core) is observed and the DA-mode dominates the time averaged electron heating. As the driving frequency or pressure are increased, the heating mode transitions into a pure α-mode, where electron heating in the sheath region dominates. At low pressure (5 and 10 mTorr), this transition coincides with a sharp decrease in electronegativity. At low pressure and low driving frequency, the EEPF is concave. As the driving frequency is increased, the number of low energy electrons increases and the relative number of higher energy electrons (>10 eV) increases. At high driving frequency, the EEPF develops a convex shape or becomes bi-Maxwellian.

Radio frequency and capacitive sensors for dielectric characterization of low-conductivity media

NASA Astrophysics Data System (ADS)

Sheldon, Robert T.

Low-conductivity media are found in a vast number of applications, for example as electrical insulation or as the matrix polymer in high strength-to-weight ratio structural composites. In some applications, these materials are subjected to extreme environmental, thermal, and mechanical conditions that can affect the material's desired performance. In a more general sense, a medium may be comprised of one or more layers with unknown material properties that may affect the desired performance of the entire structure. It is often, therefore, of great import to be able to characterize the material properties of these media for the purpose of estimating their future performance in a certain application. Low-conductivity media, or dielectrics, are poor electrical conductors and permit electromagnetic waves and static electric fields to pass through with minimal attenuation. The amount of electrical energy that may be stored (and lost) in these fields depends directly upon the material property, permittivity, which is generally complex, frequency-dependent and has a measurable effect on sensors designed to characterize dielectric media. In this work, two different types of dielectric sensors: radio frequency resonant antennas and lower-frequency (<1 MHz) capacitive sensors, are designed for permittivity characterization in their respective frequency regimes. In the first part of this work, the capability of characterizing multilayer dielectric structures is studied using a patch antenna, a type of antenna that is primarily designed for data communications in the microwave bands but has application in the field of nondestructive evaluation as well. Each configuration of a patch antenna has a single lowest resonant (dominant mode) frequency that is dependent upon the antenna's substrate material and geometry as well as the permittivity and geometry of exterior materials. Here, an extant forward model is validated using well-characterized microwave samples and a new method of resonant frequency and quality factor determination from measured data is presented. Excellent agreement between calculated and measured values of sensor resonant frequency was obtained for the samples studied. Agreement between calculated and measured quality factor was good in some cases but incurred the particular challenge of accurately quantifying multiple contributions to loss from the sensor structure itself, which at times dominates the contribution due to the sample material. Two later chapters describe the development of capacitive sensors to quantify the low-frequency changes in material permittivity due to environmental aging mechanisms. One embodiment involves the application of coplanar concentric interdigital electrode sensors for the purpose of investigating polymer-matrix degradation in glass-fiber composites due to isothermal aging. Samples of bismaleimide-matrix glass-fiber composites were aged at several high temperatures to induce thermal degradation and capacitive sensors were used to measure the sensor capacitance and dissipation factor, parameters that are directly proportional to the real and imaginary components of complex permittivity, respectively. It was shown that real permittivity and dissipation factor decreased with increasing aging temperature, a trend that was common to both interdigital sensor measurements and standard parallel plate electrode measurements. The second piece of work involves the development of cylindrical interdigital electrode sensors to characterize complex permittivity changes in wire insulation due to aging-related degradation. The sensor was proven effective in detecting changes in irradiated nuclear power plant wiring insulation and in aircraft wiring insulation due to liquid chemical immersion. In all three cases, the results indicate a clear correlation of measured capacitance and dissipation factor with increased degradation.

Resonance-induced sensitivity enhancement method for conductivity sensors

NASA Technical Reports Server (NTRS)

Tai, Yu-Chong (Inventor); Shih, Chi-yuan (Inventor); Li, Wei (Inventor); Zheng, Siyang (Inventor)

2009-01-01

Methods and systems for improving the sensitivity of a variety of conductivity sensing devices, in particular capacitively-coupled contactless conductivity detectors. A parallel inductor is added to the conductivity sensor. The sensor with the parallel inductor is operated at a resonant frequency of the equivalent circuit model. At the resonant frequency, parasitic capacitances that are either in series or in parallel with the conductance (and possibly a series resistance) is substantially removed from the equivalent circuit, leaving a purely resistive impedance. An appreciably higher sensor sensitivity results. Experimental verification shows that sensitivity improvements of the order of 10,000-fold are possible. Examples of detecting particulates with high precision by application of the apparatus and methods of operation are described.

Effect of boundary conditions on magnetocapacitance effect in a ring-type magnetoelectric structure

NASA Astrophysics Data System (ADS)

Zhang, Juanjuan

2017-12-01

By considering the nonlinear magneto-elastic coupling relationships of magnetostrictive materials, an analytical model is proposed. The resonance frequencies can be accurately predicted by this theoretical model, and they are in good agreement with experimental data. Subsequently, the magnetocapacitance effect in a ring-type magnetoelectric (ME) structure with different boundary conditions is investigated, and it is found that various mechanical boundaries, the frequency, the magnetic field, the geometric size, and the interface bonding significantly affect the capacitance of the ME structure. Further, additional resonance frequencies can be predicted by considering appropriate imperfect interface bonding. Finally, the influence of an external force on the capacitance is studied. The result shows that an external force on the boundary changes the capacitance, but has only a weak influence on the resonance frequency.

Capacitive Micro Pressure Sensor Integrated with a Ring Oscillator Circuit on Chip

PubMed Central

Dai, Ching-Liang; Lu, Po-Wei; Chang, Chienliu; Liu, Cheng-Yang

2009-01-01

The study investigates a capacitive micro pressure sensor integrated with a ring oscillator circuit on a chip. The integrated capacitive pressure sensor is fabricated using the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The ring oscillator is employed to convert the capacitance of the pressure sensor into the frequency output. The pressure sensor consists of 16 sensing cells in parallel. Each sensing cell contains a top electrode and a lower electrode, and the top electrode is a sandwich membrane. The pressure sensor needs a post-CMOS process to release the membranes after completion of the CMOS process. The post-process uses etchants to etch the sacrificial layers, and to release the membranes. The advantages of the post-process include easy execution and low cost. Experimental results reveal that the pressure sensor has a high sensitivity of 7 Hz/Pa in the pressure range of 0–300 kPa. PMID:22303167

Capacitive micro pressure sensor integrated with a ring oscillator circuit on chip.

PubMed

Dai, Ching-Liang; Lu, Po-Wei; Chang, Chienliu; Liu, Cheng-Yang

2009-01-01

The study investigates a capacitive micro pressure sensor integrated with a ring oscillator circuit on a chip. The integrated capacitive pressure sensor is fabricated using the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The ring oscillator is employed to convert the capacitance of the pressure sensor into the frequency output. The pressure sensor consists of 16 sensing cells in parallel. Each sensing cell contains a top electrode and a lower electrode, and the top electrode is a sandwich membrane. The pressure sensor needs a post-CMOS process to release the membranes after completion of the CMOS process. The post-process uses etchants to etch the sacrificial layers, and to release the membranes. The advantages of the post-process include easy execution and low cost. Experimental results reveal that the pressure sensor has a high sensitivity of 7 Hz/Pa in the pressure range of 0-300 kPa.

CMOS capacitive biosensors for highly sensitive biosensing applications.

PubMed

Chang, An-Yu; Lu, Michael S-C

2013-01-01

Magnetic microbeads are widely used in biotechnology and biomedical research for manipulation and detection of cells and biomolecules. Most lab-on-chip systems capable of performing manipulation and detection require external instruments to perform one of the functions, leading to increased size and cost. This work aims at developing an integrated platform to perform these two functions by implementing electromagnetic microcoils and capacitive biosensors on a CMOS (complementary metal oxide semiconductor) chip. Compared to most magnetic-type sensors, our detection method requires no externally applied magnetic fields and the associated fabrication is less complicated. In our experiment, microbeads coated with streptavidin were driven to the sensors located in the center of microcoils with functionalized anti-streptavidin antibody. Detection of a single microbead was successfully demonstrated using a capacitance-to-frequency readout. The average capacitance changes for the experimental and control groups were -5.3 fF and -0.2 fF, respectively.

Fluctuation spectra in the NASA Lewis bumpy-torus plasma

NASA Technical Reports Server (NTRS)

Singh, C. M.; Krawczonek, W. M.; Roth, J. R.; Hong, J. Y.; Powers, E. J.

1978-01-01

The electrostatic potential fluctuation spectrum in the NASA Lewis bumpy-torus plasma was studied with capacitive probes in the low pressure (high impedance) mode and in the high pressure (low impedance) mode. Under different operating conditions, the plasma exhibited electrostatic potential fluctuations (1) at a set of discrete frequencies, (2) at a continuum of frequencies, and (3) as incoherent high-frequency turbulence. The frequencies and azimuthal wave numbers were determined from digitally implemented autopower and cross-power spectra. The azimuthal dispersion characteristics of the unstable waves were examined by varying the electrode voltage, the polarity of the voltage, and the neutral background density at a constant magnetic field strength.

Controlling the dynamics of electrons and ions in large area capacitive radio frequency plasmas via the Electrical Asymmetry Effect

NASA Astrophysics Data System (ADS)

Schuengel, Edmund

2014-10-01

The processing of large area surfaces in capacitive radio-frequency plasmas is a crucial step in the manufacturing of various high-technological products. To optimize these discharges for applications, understanding and controlling the dynamics of electrons and ions is vitally important. A recently proposed method of controlling these dynamics is based on the Electrical Asymmetry Effect (EAE): By driving the capacitive discharge with a dual-frequency voltage waveform composed of two consecutive harmonics, the symmetry of the discharge can be varied by tuning the relative phase. In this experimental study, the EAE is tested in hydrogen diluted silane discharges. The electron dynamics visualized by Phase Resolved Optical Emission Spectroscopy depends on the electrical asymmetry, the heating mode, and the presence of dust particles agglomerating in the plasma volume. In particular, a transition from the α-mode (heating by sheath expansion and field reversal) to the Ω-mode (heating by drift field in the bulk) is observed. The ion dynamics are strongly affected by the sheaths electric fields, which can be controlled via the EAE: Separate control of the flux and mean energy of ions onto the electrodes is possible via the EAE. Furthermore, investigations of the spatially resolved ion flux in the electromagnetic regime, i.e. using higher driving frequencies, reveal that the ion flux profile is controllable via the phase, as well, allowing for a significant improvement of the uniformity. Thus, it is demonstrated that the EAE is a powerful tool to control the properties of large area capacitive discharges in the volume and at the surfaces in various ways. Funded by the German Federal Ministry for the Environment, Nature conservation, and Nuclear Safety (0325210B).

Real Space Imaging of the Microscopic Origins of the Ultrahigh Dielectric Constant in Polycrystalline CaCu 3Ti 4O 12

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalinin, Sergei V; Shin, Junsoo; Veith, Gabriel M

2005-01-01

The origins of an ultrahigh dielectric constant in polycrystalline CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) were studied using the combination of impedance spectroscopy, electron microscopy, and scanning probe microscopy (SPM). Impedance spectra indicate that the transport properties in the 0.1 Hz-1 MHz frequency range are dominated by a single parallel resistive-capacitive (RC) element with a characteristic relaxation frequency of 16 Hz. dc potential distributions measurements by SPM illustrate that significant potential drops occur at the grain boundaries, which thus can be unambiguously identified as the dominant RC element. High frequency ac amplitude and phase distributions illustrate very weak grain boundary contrastmore » in SPM, indicative of strong capacitive coupling across the interfaces. These results demonstrate that the ultrahigh dielectric constant reported for polycrystalline CCTO materials is related to grain-boundary behavior.« less

Observation of an abrupt electron heating mode transition in capacitive single radio frequency discharges

NASA Astrophysics Data System (ADS)

Wilczek, Sebastian; Trieschmann, Jan; Schulze, Julian; Brinkmann, Ralf Peter; Mussenbrock, Thomas; Derzsi, Aranka; Korolov, Ihor; Donkó, Zoltan

2013-09-01

The electron heating in capacitive discharges at very low pressures (~1 Pa) is dominated by stochastic heating. In this regime electrons are accelerated by the oscillating sheaths, traverse through the plasma bulk and interact with the opposite sheath. By varying the driving frequency or the gap size of the discharge, energetic electrons reach the sheath edge at different temporal phases, i.e., the collapsing or expanding phase, or the moment of minimum sheath width. This work reports numerical experiments based on Particle-In-Cell simulations which show that at certain frequencies the discharge switches abruptly from a low density mode in a high density mode. The inverse transition is also abrupt, but shows a significant hysteresis. This behavior is explained by the complex interaction of the bulk and the sheath. This work is supported by the German Research Foundation in the frame of TRR 87.

Energy output of a single outer hair cell: Effect of resonance

NASA Astrophysics Data System (ADS)

Iwasa, Kuni H.

2018-05-01

The ability of the mammalian ear in processing high frequency sounds, up to ˜100 kHz, is based on the capability of outer hair cells (OHCs) in responding to stimulation at high frequencies. These cells show a unique motility in their cell body coupled with charge movement. With this motile element, voltage changes generated by stimuli at their hair bundles drive the cell body and that, in turn, amplifies the signal. In vitro experiments show that the movement of these charges significantly increases the membrane capacitance, limiting the motile activity by an additional attenuation of voltage changes. It was found, however, that such an effect is due to the absence of mechanical load. In the presence of mechanical load, particularly inertial load, such as under in vivo conditions, the movement of motile charges should reduce the membrane capacitance, enhancing the mechanical power output.

DC and small-signal physical models for the AlGaAs/GaAs high electron mobility transistor

NASA Technical Reports Server (NTRS)

Sarker, J. C.; Purviance, J. E.

1991-01-01

Analytical and numerical models are developed for the microwave small-signal performance, such as transconductance, gate-to-source capacitance, current gain cut-off frequency and the optimum cut-off frequency of the AlGaAs/GaAs High Electron Mobility Transistor (HEMT), in both normal and compressed transconductance regions. The validated I-V characteristics and the small-signal performances of four HeMT's are presented.

A quantitative description of flagellar movement in golden hamster spermatozoa.

PubMed

Ishijima, S; Mohri, H

1985-01-01

Flagellar movement of golden hamster spermatozoa obtained from the testis and the caput and cauda epididymides was observed by a light microscope while holding them at their heads with a micropipette. Flagellar movement of capacitated spermatozoa and of reactivated spermatozoa demembranated with Triton X-100 was also observed. Testicular and caput epididymal spermatozoa showed weak movement in Tyrode's solution, whereas cauda epididymal spermatozoa showed vigorous movement. The flagellar bends of the cauda epididymal spermatozoa were almost planar. Capacitated spermatozoa moved with waves of a large amplitude. Demembranated spermatozoa reactivated with ATP only had a latent period before the initiation of flagellar movement, and beat at low frequency, whereas demembranated spermatozoa reactivated with both ATP and cAMP began to move immediately at high frequency. Thrust and hydrodynamic power output were calculated using the parameters for the typical waveforms of cauda epididymal spermatozoa before and after capacitation. The possible role of the large amplitude beat in capacitated spermatozoa is discussed. A comparison of the 'principal' and 'reverse' bends in golden hamster sperm flagella as defined by Woolley (1977) with those in sea urchin sperm flagella suggests that the so-called 'principal' bend in golden hamster sperm flagella corresponds to the reverse bend in sea urchin sperm flagella and vice versa.

Design and Development for Capacitive Humidity Sensor Applications of Lead-Free Ca,Mg,Fe,Ti-Oxides-Based Electro-Ceramics with Improved Sensing Properties via Physisorption

PubMed Central

Tripathy, Ashis; Pramanik, Sumit; Manna, Ayan; Bhuyan, Satyanarayan; Azrin Shah, Nabila Farhana; Radzi, Zamri; Abu Osman, Noor Azuan

2016-01-01

Despite the many attractive potential uses of ceramic materials as humidity sensors, some unavoidable drawbacks, including toxicity, poor biocompatibility, long response and recovery times, low sensitivity and high hysteresis have stymied the use of these materials in advanced applications. Therefore, in present investigation, we developed a capacitive humidity sensor using lead-free Ca,Mg,Fe,Ti-Oxide (CMFTO)-based electro-ceramics with perovskite structures synthesized by solid-state step-sintering. This technique helps maintain the submicron size porous morphology of the developed lead-free CMFTO electro-ceramics while providing enhanced water physisorption behaviour. In comparison with conventional capacitive humidity sensors, the presented CMFTO-based humidity sensor shows a high sensitivity of up to 3000% compared to other materials, even at lower signal frequency. The best also shows a rapid response (14.5 s) and recovery (34.27 s), and very low hysteresis (3.2%) in a 33%–95% relative humidity range which are much lower values than those of existing conventional sensors. Therefore, CMFTO nano-electro-ceramics appear to be very promising materials for fabricating high-performance capacitive humidity sensors. PMID:27455263

High temperature 1 MHz capacitance-voltage method for evaluation of border traps in 4H-SiC MOS system

NASA Astrophysics Data System (ADS)

Peng, Zhao-Yang; Wang, Sheng-Kai; Bai, Yun; Tang, Yi-Dan; Chen, Xi-Ming; Li, Cheng-Zhan; Liu, Ke-An; Liu, Xin-Yu

2018-04-01

In this work, border traps located in SiO2 at different depths in 4H-SiC MOS system are evaluated by a simple and effective method based on capacitance-voltage (C-V) measurements. This method estimates the border traps between two adjacent depths through C-V measurement at various frequencies at room and elevated temperatures. By comparison of these two C-V characteristics, the correlation between time constant of border traps and temperatures is obtained. Then the border trap density is determined by integration of capacitance difference against gate voltage at the regions where border traps dominate. The results reveal that border trap concentration a few nanometers away from the interface increases exponentially towards the interface, which is in good agreement with previous work. It has been proved that high temperature 1 MHz C-V method is effective for border trap evaluation.

Near millimeter wave bandpass filters

NASA Technical Reports Server (NTRS)

Timusk, T.; Richards, P. L.

1981-01-01

The properties of bandpass filters for broadband photometry are reported in the 3-12/cm frequency range. The filters are based on a combination of capacitive grids deposited on thick Mylar substrates and are designed to have very high out-of-band rejection. Low frequencies are blocked by a thick grill that consists of a hexagonal grid of circular holes in a thick metal plate.

Estimation of intrinsic and extrinsic capacitances of graphene self-switching diode using conformal mapping technique

NASA Astrophysics Data System (ADS)

Singh, Arun K.; Auton, Gregory; Hill, Ernie; Song, Aimin

2018-07-01

Due to a very high carrier concentration and low band gap, graphene based self-switching diodes do not demonstrate a very high rectification ratio. Despite that, it takes the advantage of graphene’s high carrier mobility and has been shown to work at very high microwave frequencies. However, the AC component of these devices is hidden in the very linear current–voltage characteristics. Here, we extract and quantitatively study the device capacitance that determines the device nonlinearity by implementing a conformal mapping technique. The estimated value of the nonlinear component or curvature coefficient from DC results based on Shichman–Hodges model predicts the rectified output voltage, which is in good agreement with the experimental RF results.

Electric properties of nanostructure (FeCoZr)x(CaF2)(100-x) produced in argon Ar atmosphere

NASA Astrophysics Data System (ADS)

Bondariev, Vitalii; Czarnacka, Karolina; Boiko, Oleksandr

2015-09-01

The paper presents frequency f and temperature Tp dependences of conductivity σ, capacitance Cp and phase shift angle θ for the nanocomposite metal-dielectric (FeCoZr)x(CaF2)(100-x). Samples of nanocomposite were produced by ion-beam sputtering in pure argon Ar atmosphere. Partial pressure of gas Ar in the ion source pAr=1.1×10-1Pa. Contains of metallic phase in tested sample is x = 54.6 at.%. Studies carried out by stand to measuring of AC electrical properties of nanocomposites and semiconductors. The measurements have been performed using alternating current within the frequency range of 50 Hz - 1 MHz for measuring temperatures ranging from 77 K to 373 K. On the frequency-temperature dependence of phase shift angle θ at low frequencies phase shift have capacitive character and at high frequencies - inductive. Position of fmin on the frequency dependence on capacitance Cp corresponds exactly to the resonance frequency fR for which the angle θ crosses zero. Analysis of the results showed that phenomena similar to phenomena in conventional circuit RLC occur in the nanocomposite (CoFeZr)54.6(CaF2)45.4. Jumping recharging between the defects leads to the formation of dipoles and consequently to the increase of permittivity. After a time τ electron returns to the first defect and dipole disappears. The formation of inductance in nanocomposite is associated with return jumps of electrons from defect with negative charge to the defect with positive charge, set by the time, which are characterized by low values of activation energy.

Modeling and Characterization of Capacitive Elements With Tissue as Dielectric Material for Wireless Powering of Neural Implants.

PubMed

Erfani, Reza; Marefat, Fatemeh; Sodagar, Amir M; Mohseni, Pedram

2018-05-01

This paper reports on the modeling and characterization of capacitive elements with tissue as the dielectric material, representing the core building block of a capacitive link for wireless power transfer to neural implants. Each capacitive element consists of two parallel plates that are aligned around the tissue layer and incorporate a grounded, guarded, capacitive pad to mitigate the adverse effect of stray capacitances and shield the plates from external interfering electric fields. The plates are also coated with a biocompatible, insulating, coating layer on the inner side of each plate in contact with the tissue. A comprehensive circuit model is presented that accounts for the effect of the coating layers and is validated by measurements of the equivalent capacitance as well as impedance magnitude/phase of the parallel plates over a wide frequency range of 1 kHz-10 MHz. Using insulating coating layers of Parylene-C at a thickness of and Parylene-N at a thickness of deposited on two sets of parallel plates with different sizes and shapes of the guarded pad, our modeling and characterization results accurately capture the effect of the thickness and electrical properties of the coating layers on the behavior of the capacitive elements over frequency and with different tissues.

Real-time estimation of paracellular permeability of cerebral endothelial cells by capacitance sensor array

NASA Astrophysics Data System (ADS)

Hyun Jo, Dong; Lee, Rimi; Hyoung Kim, Jin; Oh Jun, Hyoung; Geol Lee, Tae; Hun Kim, Jeong

2015-06-01

Vascular integrity is important in maintaining homeostasis of brain microenvironments. In various brain diseases including Alzheimer’s disease, stroke, and multiple sclerosis, increased paracellular permeability due to breakdown of blood-brain barrier is linked with initiation and progression of pathological conditions. We developed a capacitance sensor array to monitor dielectric responses of cerebral endothelial cell monolayer, which could be utilized to evaluate the integrity of brain microvasculature. Our system measured real-time capacitance values which demonstrated frequency- and time-dependent variations. With the measurement of capacitance at the frequency of 100 Hz, we could differentiate the effects of vascular endothelial growth factor (VEGF), a representative permeability-inducing factor, on endothelial cells and quantitatively analyse the normalized values. Interestingly, we showed differential capacitance values according to the status of endothelial cell monolayer, confluent or sparse, evidencing that the integrity of monolayer was associated with capacitance values. Another notable feature was that we could evaluate the expression of molecules in samples in our system with the reference of real-time capacitance values. We suggest that this dielectric spectroscopy system could be successfully implanted as a novel in vitro assay in the investigation of the roles of paracellular permeability in various brain diseases.

An Educational Laboratory Virtual Instrumentation Suite Assisted Experiment for Studying Fundamentals of Series Resistance-Inductance-Capacitance Circuit

ERIC Educational Resources Information Center

Rana, K. P. S.; Kumar, Vineet; Mendiratta, Jatin

2017-01-01

One of the most elementary concepts in freshmen Electrical Engineering subject comprises the Resistance-Inductance-Capacitance (RLC) circuit fundamentals, that is, their time and frequency domain responses. For a beginner, generally, it is difficult to understand and appreciate the step and the frequency responses, particularly the resonance. This…

High-Voltage, Asymmetric-Waveform Generator

NASA Technical Reports Server (NTRS)

Beegle, Luther W.; Duong, Tuan A.; Duong, Vu A.; Kanik, Isik

2008-01-01

The shapes of waveforms generated by commercially available analytical separation devices, such as some types of mass spectrometers and differential mobility spectrometers are, in general, inadequate and result in resolution degradation in output spectra. A waveform generator was designed that would be able to circumvent these shortcomings. It is capable of generating an asymmetric waveform, having a peak amplitude as large as 2 kV and frequency of several megahertz, which can be applied to a capacitive load. In the original intended application, the capacitive load would consist of the drift plates in a differential-mobility spectrometer. The main advantage to be gained by developing the proposed generator is that the shape of the waveform is made nearly optimum for various analytical devices requiring asymmetric-waveform such as differential-mobility spectrometers. In addition, this waveform generator could easily be adjusted to modify the waveform in accordance with changed operational requirements for differential-mobility spectrometers. The capacitive nature of the load is an important consideration in the design of the proposed waveform generator. For example, the design provision for shaping the output waveform is based partly on the principle that (1) the potential (V) on a capacitor is given by V=q/C, where C is the capacitance and q is the charge stored in the capacitor; and, hence (2) the rate of increase or decrease of the potential is similarly proportional to the charging or discharging current. The proposed waveform generator would comprise four functional blocks: a sine-wave generator, a buffer, a voltage shifter, and a high-voltage switch (see Figure 1). The sine-wave generator would include a pair of operational amplifiers in a feedback configuration, the parameters of which would be chosen to obtain a sinusoidal timing signal of the desired frequency. The buffer would introduce a slight delay (approximately equal to 20 ns) but would otherwise leave the fundamental timing signal unchanged. The buffered timing signal would be fed as input to the level shifter. The output of the level shifter would serve as a timing and control signal for the high-voltage switch, causing the switch to alternately be (1) opened, allowing the capacitive load to be charged from a high-voltage DC power supply; then (2) closed to discharge the capacitive load to ground. Hence, the output waveform would closely approximate a series of exponential charging and discharging curves (see Figure 2).

cAmp activation of apical membrane Cl(-) channels: theoretical considerations for impedance analysis.

PubMed Central

Păunescu, T G; Helman, S I

2001-01-01

Transepithelial electrical impedance analysis provides a sensitive method to evaluate the conductances and capacitances of apical and basolateral plasma membranes of epithelial cells. Impedance analysis is complicated, due not only to the anatomical arrangement of the cells and their paracellular shunt pathways, but also in particular to the existence of audio frequency-dependent capacitances or dispersions. In this paper we explore implications and consequences of anatomically related Maxwell-Wagner and Cole-Cole dielectric dispersions that impose limitations, approximations, and pitfalls of impedance analysis when tissues are studied under widely ranging spontaneous rates of transport, and in particular when apical membrane sodium and chloride channels are activated by adenosine 3',5'-cyclic monophosphate (cAMP) in A6 epithelia. We develop the thesis that capacitive relaxation processes of any origin lead not only to dependence on frequency of the impedance locus, but also to the appearance of depressed semicircles in Nyquist transepithelial impedance plots, regardless of the tightness or leakiness of the paracellular shunt pathways. Frequency dependence of capacitance precludes analysis of data in traditional ways, where capacitance is assumed constant, and is especially important when apical and/or basolateral membranes exhibit one or more dielectric dispersions. PMID:11463629

Passive wireless strain monitoring of tyres using capacitance and tuning frequency changes

NASA Astrophysics Data System (ADS)

Matsuzaki, Ryosuke; Todoroki, Akira

2005-08-01

In-service strain monitoring of tyres of automobiles is quite effective for improving the reliability of tyres and anti-lock braking systems (ABS). Conventional strain gauges have high stiffness and require lead wires. Therefore, they are cumbersome for tyre strain measurements. In a previous study, the authors proposed a new wireless strain monitoring method that adopts the tyre itself as a sensor, with an oscillating circuit. This method is very simple and useful, but it requires a battery to activate the oscillating circuit. In the present study, the previous method for wireless tyre monitoring is improved to produce a passive wireless sensor. A specimen made from a commercially available tyre is connected to a tuning circuit comprising an inductance and a capacitance as a condenser. The capacitance change of the tyre alters the tuning frequency. This change of the tuned radio wave facilitates wireless measurement of the applied strain of the specimen without any power supply. This passive wireless method is applied to a specimen and the static applied strain is measured. Experiments demonstrate that the method is effective for passive wireless strain monitoring of tyres.

Noncontact Capacitive Clearance Control System For Laser Cutting Machines

NASA Astrophysics Data System (ADS)

Topkaya, Ahmet; Schmall, Karl-Heinz; Majoli, Ralf

1989-03-01

For a continuous high quality laser cut, it is necessary among other things to position the focal point of the laser beam correctly. This means that a constant clearance between the cutting head and the workpiece with a tolerance of +/- 0.Imm must he ensured. When cutting corrugated automobile bodysheet for example, a good quality cut can only be achieved with automatic clearance control. In the following, a method of automatic clearance control is described using the assistance of a noncontact capacitive sensor system. The copper nozzle of the laser cutting head acts as the electrode of the clearance sensor. The nozzle electrode and the workpiece build a small variable capacitance depending on the clearance. A change of clearance also changes the capacitance, which in turn influences a high frequency oscillator circuit. This shift in frequency is then converted into an analogue DC signal, which can be used to operate a servo motor control for the positioning of the laser cutting head in a closed loop servo system. Laser cutting heads with clearance sensor nozzles of different shapes, suited fur most applications in the industry, with focal lengths from 2.5" to 5" have been developed. They are capable to cut metal sheet from 0.2 to 12 mm of thickness, using CO2-lasers with output power up to 2.5 kW. For special applications involving difficult workpiece topographies in automobile production applications special "trunk" nozzles have been developed. For 5-axis cutting machines and robots, new laser cutting heads with integrated nozzle sensors in combination with a high dynamic Z-axis motor drive are in a stage of development.

Radio-frequency powered glow discharge device and method with high voltage interface

DOEpatents

Duckworth, D.C.; Marcus, R.K.; Donohue, D.L.; Lewis, T.A.

1994-06-28

A high voltage accelerating potential, which is supplied by a high voltage direct current power supply, is applied to the electrically conducting interior wall of an RF powered glow discharge cell. The RF power supply desirably is electrically grounded, and the conductor carrying the RF power to the sample held by the probe is desirably shielded completely excepting only the conductor's terminal point of contact with the sample. The high voltage DC accelerating potential is not supplied to the sample. A high voltage capacitance is electrically connected in series between the sample on the one hand and the RF power supply and an impedance matching network on the other hand. The high voltage capacitance isolates the high DC voltage from the RF electronics, while the RF potential is passed across the high voltage capacitance to the plasma. An inductor protects at least the RF power supply, and desirably the impedance matching network as well, from a short that might occur across the high voltage capacitance. The discharge cell and the probe which holds the sample are configured and disposed to prevent the probe's components, which are maintained at ground potential, from bridging between the relatively low vacuum region in communication with the glow discharge maintained within the cell on the one hand, and the relatively high vacuum region surrounding the probe and cell on the other hand. The probe and cell also are configured and disposed to prevent the probe's components from electrically shorting the cell's components. 11 figures.

Radio-frequency powered glow discharge device and method with high voltage interface

DOEpatents

Duckworth, Douglas C.; Marcus, R. Kenneth; Donohue, David L.; Lewis, Trousdale A.

1994-01-01

A high voltage accelerating potential, which is supplied by a high voltage direct current power supply, is applied to the electrically conducting interior wall of an RF powered glow discharge cell. The RF power supply desirably is electrically grounded, and the conductor carrying the RF power to the sample held by the probe is desirably shielded completely excepting only the conductor's terminal point of contact with the sample. The high voltage DC accelerating potential is not supplied to the sample. A high voltage capacitance is electrically connected in series between the sample on the one hand and the RF power supply and an impedance matching network on the other hand. The high voltage capacitance isolates the high DC voltage from the RF electronics, while the RF potential is passed across the high voltage capacitance to the plasma. An inductor protects at least the RF power supply, and desirably the impedance matching network as well, from a short that might occur across the high voltage capacitance. The discharge cell and the probe which holds the sample are configured and disposed to prevent the probe's components, which are maintained at ground potential, from bridging between the relatively low vacuum region in communication with the glow discharge maintained within the cell on the one hand, and the relatively high vacuum region surrounding the probe and cell on the other hand. The probe and cell also are configured and disposed to prevent the probe's components from electrically shorting the cell's components.

Electrochemical behavior of single-walled carbon nanotube supercapacitors under compressive stress.

PubMed

Li, Xin; Rong, Jiepeng; Wei, Bingqing

2010-10-26

The effect of compressive stress on the electrochemical behavior of flexible supercapacitors assembled with single-walled carbon nanotube (SWNT) film electrodes and 1 M aqueous electrolytes with different anions and cations were thoroughly investigated. The under-pressed capacitive and resistive features of the supercapacitors were studied by means of cyclic voltammetry measurements and electrochemical impedance analysis. The results demonstrated that the specific capacitance increased first and saturated in corresponding decreases of the series resistance, the charge-transfer resistance, and the Warburg diffusion resistance under an increased pressure from 0 to 1723.96 kPa. Wettability as well as ion-size effect of different aqueous electrolytes played important roles to determine the pressure dependence behavior of the suerpcapacitors under an applied pressure. An improved high-frequency capacitive response with 1172 Hz knee frequency, which is significantly higher compared to reported values, was observed under the compressive pressure of 1723.96 kPa, indicating an improving and excellent high-power capability of the supercapacitors under the pressure. The experimental results and the thorough analysis described in this work not only provide fundamental insight of pressure effects on supercapacitors but also give an important guideline for future design of next generation flexible/stretchable supercapacitors for industrial and consumer applications.

Abnormal hump in capacitance-voltage measurements induced by ultraviolet light in a-IGZO thin-film transistors

NASA Astrophysics Data System (ADS)

Tsao, Yu-Ching; Chang, Ting-Chang; Chen, Hua-Mao; Chen, Bo-Wei; Chiang, Hsiao-Cheng; Chen, Guan-Fu; Chien, Yu-Chieh; Tai, Ya-Hsiang; Hung, Yu-Ju; Huang, Shin-Ping; Yang, Chung-Yi; Chou, Wu-Ching

2017-01-01

This work demonstrates the generation of abnormal capacitance for amorphous indium-gallium-zinc oxide (a-InGaZnO4) thin-film transistors after being subjected to negative bias stress under ultraviolet light illumination stress (NBIS). At various operation frequencies, there are two-step tendencies in their capacitance-voltage curves. When gate bias is smaller than threshold voltage, the measured capacitance is dominated by interface defects. Conversely, the measured capacitance is dominated by oxygen vacancies when gate bias is larger than threshold voltage. The impact of these interface defects and oxygen vacancies on capacitance-voltage curves is verified by TCAD simulation software.

Influence of excitation frequency on the metastable atoms and electron energy distribution function in a capacitively coupled argon discharge

NASA Astrophysics Data System (ADS)

Sharma, S.; Sirse, N.; Turner, M. M.; Ellingboe, A. R.

2018-06-01

One-dimensional particle-in-cell simulation is used to simulate the capacitively coupled argon plasma for a range of excitation frequency from 13.56 MHz to 100 MHz. The argon chemistry set can, selectively, include two metastable levels enabling multi-step ionization and metastable pooling. The results show that the plasma density decreases when metastable atoms are included with higher discrepancy at a higher excitation frequency. The contribution of multistep ionization to the overall density increases with the excitation frequency. The electron temperature increases with the inclusion of metastable atoms and decreases with the excitation frequency. At a lower excitation frequency, the density of Ar** (3p5 4p, 13.1 eV) is higher than that of Ar* (3p5 4s, 11.6 eV), whereas at higher excitation frequencies, the Ar* (3p5 4s, 11.6 eV) is the dominant metastable atom. The metastable and electron temperature profile evolve from a parabolic profile at a lower excitation frequency to a saddle type profile at a higher excitation frequency. With metastable, the electron energy distribution function (EEDF) changes its shape from Druyvesteyn type, at a low excitation frequency, to bi-Maxwellian, at a high frequency plasma excitation; however, a three-temperature EEDF is observed without metastable atoms.

High capacitance density MIS capacitor using Si nanowires by MACE and ALD alumina dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leontis, I.; Nassiopoulou, A. G., E-mail: A.Nassiopoulou@inn.demokritos.gr; Botzakaki, M. A.

2016-06-28

High capacitance density three-dimensional (3D) metal-insulator-semiconductor (MIS) capacitors using Si nanowires (SiNWs) by metal-assisted chemical etching and atomic-layer-deposited alumina dielectric film were fabricated and electrically characterized. A chemical treatment was used to remove structural defects from the nanowire surface, in order to reduce the density of interface traps at the Al{sub 2}O{sub 3}/SiNW interface. SiNWs with two different lengths, namely, 1.3 μm and 2.4 μm, were studied. A four-fold capacitance density increase compared to a planar reference capacitor was achieved with the 1.3 μm SiNWs. In the case of the 2.4 μm SiNWs this increase was ×7, reaching a value of 4.1 μF/cm{sup 2}. Capacitance-voltagemore » (C-V) measurements revealed that, following a two-cycle chemical treatment, frequency dispersion at accumulation regime and flat-band voltage shift disappeared in the case of the 1.3 μm SiNWs, which is indicative of effective removal of structural defects at the SiNW surface. In the case of the 2.4 μm SiNWs, frequency dispersion at accumulation persisted even after the two-step chemical treatment. This is attributed to a porous Si layer at the SiNW tops, which is not effectively removed by the chemical treatment. The electrical losses of MIS capacitors in both cases of SiNW lengths were studied and will be discussed.« less

Solving the Capacitive Effect in the High-Frequency sweep for Langmuir Probe in SYMPLE

NASA Astrophysics Data System (ADS)

Pramila; Patel, J. J.; Rajpal, R.; Hansalia, C. J.; Anitha, V. P.; Sathyanarayana, K.

2017-04-01

Langmuir Probe based measurements need to be routinely carried out to measure various plasma parameters such as the electron density (ne), the electron temperature (Te), the floating potential (Vf), and the plasma potential (Vp). For this, the diagnostic electronics along with the biasing power supplies is installed in standard industrial racks with a 2KV isolation transformer. The Signal Conditioning Electronics (SCE) system is populated inside the 4U-chassis based system with the front-end electronics, designed using high common mode differential amplifiers which can measure small differential signal in presence of high common mode dc- bias or ac ramp voltage used for biasing the probes. DC-biasing of the probe is most common method for getting its I-V characteristic but method of biasing the probe with a sweep at high frequency encounters the problem of corruption of signal due to capacitive effect specially when the sweep period and the discharge time is very fast and die down in the order of μs or lesser. This paper presents and summarises the method of removing such effects encountered while measuring the probe current.

CMOS micromachined capacitive cantilevers for mass sensing

NASA Astrophysics Data System (ADS)

Li, Ying-Chung; Ho, Meng-Han; Hung, Shi-Jie; Chen, Meng-Huei; S-C Lu, Michael

2006-12-01

In this paper, we present the design, fabrication and characterization of the CMOS micromachined cantilevers for mass sensing in the femtogram range. The cantilevers consisting of multiple metal and dielectric layers are fabricated after completion of a conventional CMOS process by dry etching steps. The cantilevers are electrostatically actuated to resonance by in-plane electrodes. The mechanical resonant frequency is detected capacitively with on-chip circuitry, where the modulation technique is applied to eliminate capacitive feedthrough from the driving port and to lessen the effect of flicker noise. The highest resonant frequency of the cantilevers is measured at 396.46 kHz with a quality factor of 2600 at 10 mTorr. The resonant frequency shift after deposition of a 0.1 µm SiO2 layer is 140 Hz, averaging 353 fg Hz-1.

Performance of all-NbN superconductive tunnel junctions as mixers at 205 GHz

NASA Technical Reports Server (NTRS)

Mcgrath, W. R.; Leduc, H. G.; Stern, J. A.

1990-01-01

Small-area (1x1 sq micron) high-current-density NbN-MgO-NbN tunnel junctions with I-V characteristics suitable for high frequency mixers were fabricated. These junctions are integrated with superconducting microstrip lines designed to resonate out the large junction capacitance. The mixer gain and noise performance were studied near 205 GHz as a function of the inductance provided by the microstrip. This has yielded values of junction capacitance of 85 fF/sq microns and magnetic penetration depth of 3800 angstroms. Mixer noise as low as 133 K has been obtained for properly tuned junctions. This is the best noise performance ever reported for an NbN SIS mixer.

Differences between direct current and alternating current capacitance nonlinearities in high-k dielectrics and their relation to hopping conduction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khaldi, O.; Kassmi, M.; El Manar University, LMOP, 2092 Tunis

2014-08-28

Capacitance nonlinearities were studied in atomic layer deposited HfO{sub 2} films using two types of signals: a pure ac voltage of large magnitude (ac nonlinearities) and a small ac voltage superimposed to a large dc voltage (dc nonlinearities). In theory, ac and dc nonlinearities should be of the same order of magnitude. However, in practice, ac nonlinearities are found to be an order of magnitude higher than dc nonlinearities. Besides capacitance nonlinearities, hopping conduction is studied using low-frequency impedance measurements and is discussed through the correlated barrier hopping model. The link between hopping and nonlinearity is established. The ac nonlinearitiesmore » are ascribed to the polarization of isolated defect pairs, while dc nonlinearities are attributed to electrode polarization which originates from defect percolation paths. Both the ac and dc capacitance nonlinearities display an exponential variation with voltage, which results from field-induced lowering of the hopping barrier energy.« less

Q factor of megahertz LC circuits based on thin films of YBaCuO high-temperature superconductor

NASA Astrophysics Data System (ADS)

Masterov, D. V.; Pavlov, S. A.; Parafin, A. E.

2008-05-01

High-frequency properties of resonant structures based on thin films of YBa2Cu3O7 δ high-temperature superconductor are studied experimentally in the frequency range 30 100 MHz. The structures planar induction coils with a self-capacitance fabricated on neodymium gallate and lanthanum aluminate substrates. The unloaded Q factor of the circuits exceeds 2 × 105 at 77 K and 40 MHz. Possible loss mechanisms that determine the Q factor of the superconducting resonant structures in the megahertz range are considered.

Three-dimensional vertical Si nanowire MOS capacitor model structure for the study of electrical versus geometrical Si nanowire characteristics

NASA Astrophysics Data System (ADS)

Hourdakis, E.; Casanova, A.; Larrieu, G.; Nassiopoulou, A. G.

2018-05-01

Three-dimensional (3D) Si surface nanostructuring is interesting towards increasing the capacitance density of a metal-oxidesemiconductor (MOS) capacitor, while keeping reduced footprint for miniaturization. Si nanowires (SiNWs) can be used in this respect. With the aim of understanding the electrical versus geometrical characteristics of such capacitors, we fabricated and studied a MOS capacitor with highly ordered arrays of vertical Si nanowires of different lengths and thermal silicon oxide dielectric, in comparison to similar flat MOS capacitors. The high homogeneity and ordering of the SiNWs allowed the determination of the single SiNW capacitance and intrinsic series resistance, as well as other electrical characteristics (density of interface states, flat-band voltage and leakage current) in relation to the geometrical characteristics of the SiNWs. The SiNW capacitors demonstrated increased capacitance density compared to the flat case, while maintaining a cutoff frequency above 1 MHz, much higher than in other reports in the literature. Finally, our model system has been shown to constitute an excellent platform for the study of SiNW capacitors with either grown or deposited dielectrics, as for example high-k dielectrics for further increasing the capacitance density. This will be the subject of future work.

Studying tantalum-based high-κ dielectrics in terms of capacitance measurements

NASA Astrophysics Data System (ADS)

Stojanovska-Georgievska, L.

2016-08-01

The trend of rapid development of microelectronics towards nano-miniaturization dictates the inevitable introduction of dielectrics with high permittivity (high-κ dielectrics), as alternative material for replacing SiO2. Therefore, studying these materials in terms of their characteristics, especially in terms of reliability, is of great importance for proper design and manufacture of devices. In this paper, alteration of capacitance in different frequency regimes is used, in order to determine the overall behavior of the material. Samples investigated here are MOS structures containing nanoscale tantalum based dielectrics. Layers of pure Ta2O5, but also Hf and Ti doped tantalum pentoxide, i.e. Ta2O5:Hf and Ta2O5:Ti are studied here. All samples are considered as ultrathin oxide layers with thicknesses less than 15 nm, obtained by radio frequent sputtering on p-type silicon substrate. Measuring capacitive characteristics enables determination of several specific parameters of the structures. The obtained results for capacitance in accumulation, the thickness and time evolution of the interfacial SiO2 layer, values of flatband and threshold voltage, density of oxide charges, interfacial and border states, and reliability properties favor the possibilities for more intensive use of studied materials in new nanoelectronic technologies.

Measured radial dependence of the peak sheath voltages present in very high frequency capacitive discharges

DOE PAGES

Barnat, E. V.; Miller, P. A.; Hebner, G. A.; ...

2007-05-16

In this paper, the radial distribution of the measured voltage drop across a sheath formed between a 300mm electrode and an argon plasma discharge is shown to depend on the excitation radio frequency, under constant power and pressure conditions. At a lower frequency of 13.56MHz, the voltage drop across the sheath is uniform across the 300mm electrode, while at higher frequencies of 60 and 162MHz the voltage drop becomes radially nonuniform. Finally, the magnitude and spatial extent of the nonuniformity become greater with increasing frequency.

Method and apparatus for radio frequency ceramic sintering

DOEpatents

Hoffman, Daniel J.; Kimrey, Jr., Harold D.

1993-01-01

Radio frequency energy is used to sinter ceramic materials. A coaxial waveguide resonator produces a TEM mode wave which generates a high field capacitive region in which a sample of the ceramic material is located. Frequency of the power source is kept in the range of radio frequency, and preferably between 60-80 MHz. An alternative embodiment provides a tunable radio frequency circuit which includes a series input capacitor and a parallel capacitor, with the sintered ceramic connected by an inductive lead. This arrangement permits matching of impedance over a wide range of dielectric constants, ceramic volumes, and loss tangents.

Method and apparatus for radio frequency ceramic sintering

DOEpatents

Hoffman, D.J.; Kimrey, H.D. Jr.

1993-11-30

Radio frequency energy is used to sinter ceramic materials. A coaxial waveguide resonator produces a TEM mode wave which generates a high field capacitive region in which a sample of the ceramic material is located. Frequency of the power source is kept in the range of radio frequency, and preferably between 60-80 MHz. An alternative embodiment provides a tunable radio frequency circuit which includes a series input capacitor and a parallel capacitor, with the sintered ceramic connected by an inductive lead. This arrangement permits matching of impedance over a wide range of dielectric constants, ceramic volumes, and loss tangents. 6 figures.

Electron Information in Single- and Dual-Frequency Capacitive Discharges at Atmospheric Pressure.

PubMed

Park, Sanghoo; Choe, Wonho; Moon, Se Youn; Shi, Jian Jun

2018-05-14

Determining the electron properties of weakly ionized gases, particularly in a high electron-neutral collisional condition, is a nontrivial task; thus, the mechanisms underlying the electron characteristics and electron heating structure in radio-frequency (rf) collisional discharges remain unclear. Here, we report the electrical characteristics and electron information in single-frequency (4.52 MHz and 13.56 MHz) and dual-frequency (a combination of 4.52 MHz and 13.56 MHz) capacitive discharges within the abnormal α-mode regime at atmospheric pressure. A continuum radiation-based electron diagnostic method is employed to estimate the electron density (n e ) and temperature (T e ). Our experimental observations reveal that time-averaged n e (7.7-14 × 10 11  cm -3 ) and T e (1.75-2.5 eV) can be independently controlled in dual-frequency discharge, whereas such control is nontrivial in single-frequency discharge, which shows a linear increase in n e and little to no change in T e with increases in the rf input power. Furthermore, the two-dimensional spatiotemporal evolution of neutral bremsstrahlung and associated electron heating structures is demonstrated. These results reveal that a symmetric structure in electron heating becomes asymmetric (via a local suppression of electron temperature) as two-frequency power is simultaneously introduced.

Study of the capacitance technique for measuring high-temperature blade tip clearance on ceramic rotors

NASA Technical Reports Server (NTRS)

Barranger, John P.

1993-01-01

Higher operating temperatures required for increased engine efficiency can be achieved by using ceramic materials for engine components. Ceramic turbine rotors are subject to the same limitations with regard to gas path efficiency as their superalloy predecessors. In this study, a modified frequency-modulation system is proposed for the measurement of blade tip clearance on ceramic rotors. It is expected to operate up to 1370 C (2500 F), the working temperature of present engines with ceramic turbine rotors. The design of the system addresses two special problems associated with nonmetallic blades: the capacitance is less than that of a metal blade and the effects of temperature may introduce uncertainty with regard to the blade tip material composition. To increase capacitance and stabilize the measurement, a small portion of the rotor is modified by the application of 5-micron-thick platinum films. The platinum surfaces on the probe electrodes and rotor that are exposed to the high-velocity gas stream are coated with an additional 10-micron-thick protective ceramic topcoat. A finite-element method is applied to calculate the capacitance as a function of clearance.

Signal and Noise in FET-Nanopore Devices.

PubMed

Parkin, William M; Drndić, Marija

2018-02-23

The combination of a nanopore with a local field-effect transistor (FET-nanopore), like a nanoribbon, nanotube, or nanowire, in order to sense single molecules translocating through the pore is promising for DNA sequencing at megahertz bandwidths. Previously, it was experimentally determined that the detection mechanism was due to local potential fluctuations that arise when an analyte enters a nanopore and constricts ion flow through it, rather than the theoretically proposed mechanism of direct charge coupling between the DNA and nanowire. However, there has been little discussion on the experimentally observed detection mechanism and its relation to the operation of real devices. We model the intrinsic signal and noise in such an FET-nanopore device and compare the results to the ionic current signal. The physical dimensions of DNA molecules limit the change in gate voltage on the FET to below 40 mV. We discuss the low-frequency flicker noise (<10 kHz), medium-frequency thermal noise (<100 kHz), and high-frequency capacitive noise (>100 kHz) in FET-nanopore devices. At bandwidths dominated by thermal noise, the signal-to-noise ratio in FET-nanopore devices is lower than in the ionic current signal. At high frequencies, where noise due to parasitic capacitances in the amplifier and chip is the dominant source of noise in ionic current measurements, high-transconductance FET-nanopore devices can outperform ionic current measurements.

Experimental study of a very high frequency, 162 MHz, segmented electrode, capacitively coupled plasma discharge

NASA Astrophysics Data System (ADS)

Sirse, Nishant; Harvey, Cleo; Gaman, Cezar; Ellingboe, Bert

2016-09-01

Radio-frequency capacitively coupled plasma (CCP) discharge operating at a very high frequency, 30-300 MHz, offers many advantages over standard 13.56 MHz CCP. However, there is a limited flexibility on the choice of driving frequency and substrate size due to plasma non-uniformity caused by the standing wave effect and edge effect. To overcome this issue segmented electrode CCP's are proposed and researched. Despite its numerous advantages the power coupling mechanism and plasma chemistry in this type of discharge are not fully understood due to lack of experimental data. In this paper, we present the experimental study of a segmented electrode, 3x4 tile array (10x10 cm square tile with 1 cm tile-to-tile separation), CCP discharge driven at 162 MHz. We measured plasma uniformity and gas temperature using hairpin probe and optical emission spectroscopy respectively. A homemade RF compensated Langmuir probe is employed to measure the Electron Energy Distribution Function (EEDF) by second harmonic technique. Energy resolved quadrupole mass spectrometer is utilized to measure the ion energy distribution. Discharge/plasma properties are investigated for several operating conditions and for power coupling mode in both washer board and checker board configuration. The experimental results show that the uniform plasma density can be maintained over a large area along with highly non-equilibrium condition to produce unique gas phase plasma chemistry.

Equivalent distributed capacitance model of oxide traps on frequency dispersion of C-V curve for MOS capacitors

NASA Astrophysics Data System (ADS)

Lu, Han-Han; Xu, Jing-Ping; Liu, Lu; Lai, Pui-To; Tang, Wing-Man

2016-11-01

An equivalent distributed capacitance model is established by considering only the gate oxide-trap capacitance to explain the frequency dispersion in the C-V curve of MOS capacitors measured for a frequency range from 1 kHz to 1 MHz. The proposed model is based on the Fermi-Dirac statistics and the charging/discharging effects of the oxide traps induced by a small ac signal. The validity of the proposed model is confirmed by the good agreement between the simulated results and experimental data. Simulations indicate that the capacitance dispersion of an MOS capacitor under accumulation and near flatband is mainly caused by traps adjacent to the oxide/semiconductor interface, with negligible effects from the traps far from the interface, and the relevant distance from the interface at which the traps can still contribute to the gate capacitance is also discussed. In addition, by excluding the negligible effect of oxide-trap conductance, the model avoids the use of imaginary numbers and complex calculations, and thus is simple and intuitive. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176100 and 61274112), the University Development Fund of the University of Hong Kong, China (Grant No. 00600009), and the Hong Kong Polytechnic University, China (Grant No. 1-ZVB1).

Tunable Superconducting Split Ring Resonators

DTIC Science & Technology

2012-09-19

microwave field-strength distortion and quality- factor dependence on tuning. Feedback for changes in design and fabrication, (4) design and fabrication...elements. For many applications tuning of the resonance frequency of the SRR is needed. Classically this is done by varactor diodes. Their capacitance ... capacitance of the gap to form a resonator circuit. The advantage of such a circuit is its quite low resonance frequency compared to other structures

Edge-Oriented Graphene on Carbon Nanofiber for High-Frequency Supercapacitors

NASA Astrophysics Data System (ADS)

Islam, Nazifah; Warzywoda, Juliusz; Fan, Zhaoyang

2018-03-01

High-frequency supercapacitors are being studied with the aim to replace the bulky electrolytic capacitors for current ripple filtering and other functions used in power systems. Here, 3D edge-oriented graphene (EOG) was grown encircling carbon nanofiber (CNF) framework to form a highly conductive electrode with a large surface area. Such EOG/CNF electrodes were tested in aqueous and organic electrolytes for high-frequency supercapacitor development. For the aqueous and the organic cell, the characteristic frequency at - 45° phase angle was found to be as high as 22 and 8.5 kHz, respectively. At 120 Hz, the electrode capacitance density was 0.37 and 0.16 mF cm-2 for the two cells. In particular, the 3 V high-frequency organic cell was successfully tested as filtering capacitor used in AC/DC converter, suggesting the promising potential of this technology for compact power supply design and other applications. [Figure not available: see fulltext.

Effects of gas flow rate on the etch characteristics of a low- k sicoh film with an amorphous carbon mask in dual-frequency CF4/C4F8/Ar capacitively-coupled plasmas

NASA Astrophysics Data System (ADS)

Kwon, Bong-Soo; Lee, Hea-Lim; Lee, Nae-Eung; Kim, Chang-Young; Choi, Chi Kyu

2013-01-01

Highly selective nanoscale etching of a low-dielectric constant (low- k) organosilicate (SiCOH) layer using a mask pattern of chemical-vapor-deposited (CVD) amorphous carbon layer (ACL) was carried out in CF4/C4F8/Ar dual-frequency superimposed capacitively-coupled plasmas. The etching characteristics of the SiCOH layers, such as the etch rate, etch selectivity, critical dimension (CD), and line edge roughness (LER) during the plasma etching, were investigated by varying the C4F8 flow rate. The C4F8 gas flow rate primarily was found to control the degree of polymerization and to cause variations in the selectivity, CD and LER of the patterned SiCOH layer. Process windows for ultra-high etch selectivity of the SiCOH layer to the CVD ACL are formed due to the disproportionate degrees of polymerization on the SiCOH and the ACL surfaces.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors.

PubMed

Giusi, G; Giordano, O; Scandurra, G; Rapisarda, M; Calvi, S; Ciofi, C

2016-04-01

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz(1/2), while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giusi, G.; Giordano, O.; Scandurra, G.

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz{sup 1/2}, while DC performances are limited only bymore » the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.« less

PGE(2) activation of apical membrane Cl(-) channels in A6 epithelia: impedance analysis.

PubMed Central

Păunescu, T G; Helman, S I

2001-01-01

Measurements of transepithelial electrical impedance of continuously short-circuited A6 epithelia were made at audio frequencies (0.244 Hz to 10.45 kHz) to investigate the time course and extent to which prostaglandin E(2) (PGE(2)) modulates Cl(-) transport and apical membrane capacitance in this cell-cultured model epithelium. Apical and basolateral membrane resistances were determined by nonlinear curve-fitting of the impedance vectors at relatively low frequencies (<50 Hz) to equations (Păunescu, T. G., and S. I. Helman. 2001. Biophys. J. 81:838--851) where depressed Nyquist impedance semicircles were characteristic of the membrane impedances under control Na(+)-transporting and amiloride-inhibited conditions. In all tissues (control, amiloride-blocked, and amiloride-blocked and furosemide-pretreated), PGE(2) caused relatively small (< approximately 3 microA/cm(2)) and rapid (<60 s) maximal increase of chloride current due to activation of a rather large increase of apical membrane conductance that preceded significant activation of Na(+) transport through amiloride-sensitive epithelial Na(+) channels (ENaCs). Apical membrane capacitance was frequency-dependent with a Cole-Cole dielectric dispersion whose relaxation frequency was near 150 Hz. Analysis of the time-dependent changes of the complex frequency-dependent equivalent capacitance of the cells at frequencies >1.5 kHz revealed that the mean 9.8% increase of capacitance caused by PGE(2) was not correlated in time with activation of chloride conductance, but rather correlated with activation of apical membrane Na(+) transport. PMID:11463630

Capacitive malaria aptasensor using Plasmodium falciparum glutamate dehydrogenase as target antigen in undiluted human serum.

PubMed

Singh, Naveen K; Arya, Sunil K; Estrela, Pedro; Goswami, Pranab

2018-06-08

A capacitive aptasensor for detecting the malaria biomarker, Plasmodium falciparum glutamate dehydrogenase (PfGDH), directly in human serum samples developed. A thiolated ssDNA aptamer (NG3) that binds specifically to PfGDH antigen with high affinity (K d = 79 nM) was used to develop the aptasensor. The aptasensor produced capacitance response at an optimized frequency of 2 Hz in a non-Faradaic electrochemical impedance based signal transduction platform. The aptasensor exhibited a wide dynamic range of 100 fM-100 nM with a limits of detection of 0.77 pM in serum samples. The interference from other predominant malarial biomarkers, namely, Plasmodium falciparum -lactate dehydrogenase and -histidine rich protein-II on the aptasensor was negligible. This PfGDH aptasensor with highly sensitive and label free detection capability has great application potential for diagnosis of asymptotic malaria and monitoring the regression of malaria during treatment regime with antimalarial drugs. Copyright © 2018 Elsevier B.V. All rights reserved.

Dual-band frequency selective surface with large band separation and stable performance

NASA Astrophysics Data System (ADS)

Zhou, Hang; Qu, Shao-Bo; Peng, Wei-Dong; Lin, Bao-Qin; Wang, Jia-Fu; Ma, Hua; Zhang, Jie-Qiu; Bai, Peng; Wang, Xu-Hua; Xu, Zhuo

2012-05-01

A new technique of designing a dual-band frequency selective surface with large band separation is presented. This technique is based on a delicately designed topology of L- and Ku-band microwave filters. The two band-pass responses are generated by a capacitively-loaded square-loop frequency selective surface and an aperture-coupled frequency selective surface, respectively. A Faraday cage is located between the two frequency selective surface structures to eliminate undesired couplings. Based on this technique, a dual-band frequency selective surface with large band separation is designed, which possesses large band separation, high selectivity, and stable performance under various incident angles and different polarizations.

Electronic properties of the Cu2ZnSn(Se,S)4 absorber layer in solar cells as revealed by admittance spectroscopy and related methods

NASA Astrophysics Data System (ADS)

Gunawan, Oki; Gokmen, Tayfun; Warren, Charles W.; Cohen, J. David; Todorov, Teodor K.; Barkhouse, D. Aaron R.; Bag, Santanu; Tang, Jiang; Shin, Byungha; Mitzi, David B.

2012-06-01

Admittance spectra and drive-level-capacitance profiles of several high performance Cu2ZnSn(Se,S)4 (CZTSSe) solar cells with bandgap ˜1.0-1.5 eV are reported. In contrast to the case for Cu(In,Ga)(S,Se)2, the CZTSSe capacitance spectra exhibit a dielectric freeze out to the geometric capacitance plateau at moderately low frequencies and intermediate temperatures (120-200 K). These spectra reveal important information regarding the bulk properties of the CZTSSe films, such as the dielectric constant and a dominant acceptor with energy level of 0.13-0.2 eV depending on the bandgap. This deep acceptor leads to a carrier freeze out effect that quenches the CZTSSe fill factor and efficiency at low temperatures.

Electrochemical Study of Hydrocarbon-Derived Electrolytes for Supercapacitors

NASA Astrophysics Data System (ADS)

Noorden, Zulkarnain A.; Matsumoto, Satoshi

2013-10-01

In this paper, we evaluate the essential electrochemical properties - capacitive and resistive behaviors - of hydrocarbon-derived electrolytes for supercapacitor application using cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The electrolytes were systematically prepared from three hydrocarbon-derived compounds, which have different molecular structures and functional groups, by treatment with high-concentration sulfuric acid (H2SO4) at room temperature. Two-electrode cells were assembled by sandwiching an electrolyte-containing glass wool separator with two active electrodes of activated carbon sheets. The dc electrical properties of the tested cells in terms of their capacitive behavior were investigated by CV, and in order to observe the frequency characteristics of the constructed cells, EIS was carried out. Compared with the tested cell with only high-concentration H2SO4 as the electrolyte, the cell with the derived electrolytes exhibit a capacitance as high as 135 F/g with an improved overall internal resistance of 2.5 Ω. Through the use of a simple preparation method and low-cost precursors, hydrocarbon-derived electrolytes could potentially find large-scale and higher-rating supercapacitor applications.

Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET

NASA Astrophysics Data System (ADS)

Kobayashi, Kenya; Sudo, Masaki; Omura, Ichiro

2018-04-01

Field-plate trench MOSFETs (FP-MOSFETs), with the features of ultralow on-resistance and very low gate–drain charge, are currently the mainstream of high-performance applications and their advancement is continuing as low-voltage silicon power devices. However, owing to their structure, their output capacitance (C oss), which leads to main power loss, remains to be a problem, especially in megahertz switching. In this study, we propose a structure-based capacitance model of FP-MOSFETs for calculating power loss easily under various conditions. Appropriate equations were modeled for C oss curves as three divided components. Output charge (Q oss) and stored energy (E oss) that were calculated using the model corresponded well to technology computer-aided design (TCAD) simulation, and we validated the accuracy of the model quantitatively. In the power loss analysis of FP-MOSFETs, turn-off loss was sufficiently suppressed, however, mainly Q oss loss increased depending on switching frequency. This analysis reveals that Q oss may become a significant issue in next-generation high-efficiency FP-MOSFETs.

Impedance of (CoFeZr)0,559(PbZrTiO3)0,441 nanocomposite annealed in a tubular furnace

NASA Astrophysics Data System (ADS)

Boiko, Oleksandr

2016-12-01

The objective of the present research has been to determine the influence of annealing in tubular furnace on capacity of (CoFeZr)0,559(PbZrTiO3)0,441 nanocomposite produced by ion beam sputtering using combined argon and oxygen beam. The phase angle of the nanocomposite directly after preparing demonstrates negative values, which indicates the capacitive type of electrical conductivity of the material. The rapid increase of conductivity when frequency increases indicates hopping conductance in the material. The additional polarization of the nanocomposite occurs with its extinction in the area of high frequencies. The electrons relaxation time has been defined as of ca τ = 1,25×10-4 s. Annealing of nanocomposite sample x = 55.9 at.% at temperature Ta = 548 K causes phase angle obtains positive values in high frequency area, which indicates the change of conduction type from capacitive to inductive. The voltage resonance phenomenon occurs in the material. Annealing in temperature of Ta = 648 K causes changes of the nanomaterials capacity. The additional oxidization of CoFeZr metallic phase nanograins which provides to the potential barrier formation around potential wells (CoFeZr nanoparticles).

Tunable, Electrically Small, Inductively Coupled Antenna for Transportable Ionospheric Heating

NASA Astrophysics Data System (ADS)

Esser, Benedikt; Mauch, Daniel; Dickens, James; Mankowski, John; Neuber, Andreas

2018-04-01

An electrically small antenna is evaluated for use as the principle radiating element in a mobile ionospheric heating array. Consisting of a small loop antenna inductively coupled to a capacitively loaded loop, the electrically small antenna provides high efficiency with the capability of being tuned within the range of ionospheric heating. At a factor 60 smaller in area than a High-Frequency Active Auroral Research Program element, this antenna provides a compact, efficient radiating element for mobile ionospheric heating. A prototype antenna at 10 MHz was built to study large-scale feasibility and possible use with photoconductive semiconductor switch-based drivers. Based on the experimental study, the design has been extrapolated to a small 6 × 4 array of antennas. At a total power input of 16.1 MW this array is predicted to provide 3.6-GW effective radiated power typically required for ionospheric heating. Array cross talk is addressed, including effects upon individual antenna port parameters. Tuning within the range of ionospheric heating, 3-10 MHz, is made possible without the use of lossy dielectrics through a large capacitive area suited to tune the antenna. Considerations for high power operation across the band are provided including a method of driving the antenna with a simple switcher requiring no radio frequency cabling. Source matching may be improved via adjustment of the coupling between small loop antenna and capacitively loaded loop improving |S11| from -1 to -21 dB at 3 MHz.

Final report of the supplementary comparison EURAMET.EM-S31 comparison of capacitance and capacitance ratio

NASA Astrophysics Data System (ADS)

Schurr, J.; Fletcher, N.; Gournay, P.; Thévenot, O.; Overney, F.; Johnson, L.; Xie, R.; Dierikx, E.

2017-01-01

Within the framework of the supplementary comparison EURAMET.EM-S31, 'Comparison of capacitance and capacitance ratio', five participants (the BIPM, METAS, LNE, PTB, and VSL) inter-compared their capacitance realisations traced to the quantum Hall resistance measured at either ac or dc. The measurands were the capacitance values of three 10 pF standards and one 100 pF standard, and optionally their voltage and frequency dependences. Because the results were not fully satisfying, the circulation was repeated, augmented by a link to the NMIA calculable capacitor. Also two ac-dc resistors were circulated and their frequency dependences were measured in terms of the ac-dc resistance standards involved in the particular capacitance realisations, to allow inter-comparison of these resistance standards. At the end and in any case, a good agreement is achieved within the expanded uncertainties at coverage factor k = 2. Furthermore, the comparison led to new insight regarding the stability and travelling behaviour of the capacitance standards and, by virtue of the link to the NMIA calculable capacitor, to a determination of the von Klitzing constant in agreement with the 2014 CODATA value. Main text To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCEM, according to the provisions of the CIPM Mutual Recognition Arrangement (CIPM MRA).

Modeling and Simulation of Capacitance-Voltage Characteristics of a Nitride GaAs Schottky Diode

NASA Astrophysics Data System (ADS)

Ziane, Abderrezzaq; Amrani, Mohammed; Benamara, Zineb; Rabehi, Abdelaziz

2018-06-01

A nitride GaAs Schottky diode has been fabricated by the nitridation of GaAs substrates using a radio frequency discharge nitrogen plasma source with a layer thickness of approximately 0.7 nm of GaN. The capacitance-voltage (C-V) characteristics of the Au/GaN/GaAs structure were investigated at room temperature for different frequencies, ranging from 1 kHz to 1 MHz. The C-V measurements for the Au/GaN/GaAs Schottky diode were found to be strongly dependent on the bias voltage and the frequency. The capacitance curves depict an anomalous peak and a negative capacitance phenomenon, indicating the presence of continuous interface state density behavior. A numerical drift-diffusion model based on the Scharfetter-Gummel algorithm was elaborated to solve a system composed of the Poisson and continuities equations. In this model, we take into account the continuous interface state density, and we have considered exponential and Gaussian distributions of trap states in the band gap. The effects of the GaAs doping concentration and the trap state density are discussed. We deduce the shape and values of the trap states, then we validate the developed model by fitting the computed C-V curves with experimental measurements at low frequency.

Lanthanum doped strontium titanate - ceria anodes: deconvolution of impedance spectra and relationship with composition and microstructure

NASA Astrophysics Data System (ADS)

Burnat, Dariusz; Nasdaurk, Gunnar; Holzer, Lorenz; Kopecki, Michal; Heel, Andre

2018-05-01

Electrochemical performance of ceramic (Ni-free) SOFC anodes based on La0.2Sr0.7TiO3-δ (LST) and Gd0.1Ce0.9O1.95-δ (CGO) is thoroughly investigated. Microstructures and compositions are systematically varied around the percolation thresholds of both phases by modification of phase volume fractions, particle size distributions and firing temperature. Differential impedance spectroscopy was performed while varying gas composition, electrical potential and operating temperature, which allows determining four distinct electrode processes. Significant anode impedances are measured at low frequencies, which in contrast to the literature cannot be linked with gas concentration impedance. The dominant low frequency process (∼1 Hz) is attributed to the chemical capacitance. Combined EIS and microstructure investigations show that the chemical capacitance correlates inversely with the available surface area of CGO, indicating CGO surface reactions as the kinetic limitation for the dominant anode process and for the associated chemical capacitance. In anodes with a fine-grained microstructure this limitation is significantly smaller, which results in an impressive power output as high as 0.34 Wcm-2. The anodes show high redox stability by not only withstanding 30 isothermal redox cycles, but even improving the performance. Hence, compared to conventional Ni-cermet anodes the new LST-CGO material represents an interesting alternative with much improved redox-stability.

Diamond-Based Supercapacitors: Realization and Properties.

PubMed

Gao, Fang; Nebel, Christoph E

2016-10-26

In this Spotlight on Applications, we describe our recent progress on the fabrication of surface-enlarged boron-doped polycrystalline diamond electrodes, and evaluate their performance in supercapacitor applications. We begin with a discussion of the fabrication methods of porous diamond materials. The diamond surface enlargement starts with a top-down plasma etching method. Although the extra surface area provided by surface roughening or nanostructuring provides good outcome for sensing applications, a capacitance value <1 mF cm -2 or a surface-enlargement factor <100 fail to meet the requirement of a practical supercapacitor. Driven by the need for large surface areas, we recently focused on the tempated-growth method. We worked on both supported and free-standing porous diamond materials to enhance the areal capacitance to the "mF cm -2 " range. With our newly developed free-standing diamond paper, areal capacitance can be multiplied by stacking multilayers of the electrode material. Finally, considering the fact that there is no real diamond-based supercapacitor device up to now, we fabricated the first prototype pouch-cell device based on the free-standing diamond paper to evaluate its performance. The results reveal that the diamond paper is suitable for operation in high potential windows (up to 2.5 V) in aqueous electrolyte with a capacitance of 0.688 mF cm -2 per layer of paper (or 0.645 F g -1 ). Impedance spectroscopy revealed that the operation frequency of the device exceeds 30 Hz. Because of the large potential window and the ability to work at high frequency, the specific power of the device reached 1 × 10 5 W kg -1 . In the end, we made estimations on the future target performance of diamond supercapacitors based on the existing information.

Rapid culture-based detection of living mycobacteria using microchannel electrical impedance spectroscopy (m-EIS).

PubMed

Kargupta, Roli; Puttaswamy, Sachidevi; Lee, Aiden J; Butler, Timothy E; Li, Zhongyu; Chakraborty, Sounak; Sengupta, Shramik

2017-06-10

Multiple techniques exist for detecting Mycobacteria, each having its own advantages and drawbacks. Among them, automated culture-based systems like the BACTEC-MGIT™ are popular because they are inexpensive, reliable and highly accurate. However, they have a relatively long "time-to-detection" (TTD). Hence, a method that retains the reliability and low-cost of the MGIT system, while reducing TTD would be highly desirable. Living bacterial cells possess a membrane potential, on account of which they store charge when subjected to an AC-field. This charge storage (bulk capacitance) can be estimated using impedance measurements at multiple frequencies. An increase in the number of living cells during culture is reflected in an increase in bulk capacitance, and this forms the basis of our detection. M. bovis BCG and M. smegmatis suspensions with differing initial loads are cultured in MGIT media supplemented with OADC and Middlebrook 7H9 media respectively, electrical "scans" taken at regular intervals and the bulk capacitance estimated from the scans. Bulk capacitance estimates at later time-points are statistically compared to the suspension's baseline value. A statistically significant increase is assumed to indicate the presence of proliferating mycobacteria. Our TTDs were 60 and 36 h for M. bovis BCG and 20 and 9 h for M. smegmatis with initial loads of 1000 CFU/ml and 100,000 CFU/ml respectively. The corresponding TTDs for the commercial BACTEC MGIT 960 system were 131 and 84.6 h for M. bovis BCG and 41.7 and 12 h for M smegmatis, respectively. Our culture-based detection method using multi-frequency impedance measurements is capable of detecting mycobacteria faster than current commercial systems.

Design, fabrication, and evaluation of on-chip micro-supercapacitors

NASA Astrophysics Data System (ADS)

Beidaghi, Majid

Due to the increasing demand for high power and reliable miniaturized energy storage devices, the development of micro-supercapacitors or electrochemical micro-capacitors have attracted much attention in recent years. This dissertation investigates several strategies to develop on-chip micro-supercapacitors with high power and energy density. Micro-supercapacitors based on interdigitated carbon micro-electrode arrays are fabricated through carbon microelectromechanical systems (C-MEMS) technique which is based on carbonization of patterned photoresist. To improve the capacitive behavior, electrochemical activation is performed on carbon micro-electrode arrays. The developed micro-supercapacitors show specific capacitances as high as 75 mFcm-2 at a scan rate of 5 mVs -1 after electrochemical activation for 30 minutes. The capacitance loss is less than 13% after 1000 cyclic voltammetry (CV) cycles. These results indicate that electrochemically activated C-MEMS micro-electrode arrays are promising candidates for on-chip electrochemical micro-capacitor applications. The energy density of micro-supercapacitors was further improved by conformal coating of polypyrrole (PPy) on C-MEMS structures. In these types of micro-devices the three dimensional (3D) carbon microstructures serve as current collectors for high energy density PPy electrodes. The electrochemical characterizations of these micro-supercapacitors show that they can deliver a specific capacitance of about 162.07 mFcm-2 and a specific power of 1.62mWcm -2 at a 20 mVs-1 scan rate. Addressing the need for high power micro-supercapacitors, the application of graphene as electrode materials for micro-supercapacitor was also investigated. The present study suggests a novel method to fabricate graphene-based micro-supercapacitors with thin film or in-plane interdigital electrodes. The fabricated micro-supercapacitors show exceptional frequency response and power handling performance and could effectively charge and discharge at rates as high as 50 Vs-1. CV measurements show that the specific capacitance of the micro-supercapacitor based on reduced graphene oxide and carbon nanotube composites is 6.1 mFcm -2 at scan rate of 0.01Vs-1. At a very high scan rate of 50 Vs-1, a specific capacitance of 2.8 mFcm-2 (stack capacitance of 3.1 Fcm-3) is recorded. This unprecedented performance can potentially broaden the future applications of micro-supercapacitors.

High-frequency self-aligned graphene transistors with transferred gate stacks.

PubMed

Cheng, Rui; Bai, Jingwei; Liao, Lei; Zhou, Hailong; Chen, Yu; Liu, Lixin; Lin, Yung-Chen; Jiang, Shan; Huang, Yu; Duan, Xiangfeng

2012-07-17

Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on a sacrificial substrate, and then transferred onto arbitrary substrates with graphene on top. A self-aligned process, enabled by the unique structure of the transferred gate stacks, is then used to position precisely the source and drain electrodes with minimized access resistance or parasitic capacitance. This process has therefore enabled scalable fabrication of self-aligned graphene transistors with unprecedented performance including a record-high cutoff frequency up to 427 GHz. Our study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra-high-frequency circuits.

Biomedical applications of a commercial capacitance transducer.

DOT National Transportation Integrated Search

1968-03-01

A capacitive displacement transducer with a linear response and constant sensitivity for a frequency range of 0-1,000 Hz is described. Its application to measurement of chest wall motions was verified using static displacements from flat and curved s...

CAD of 0.1- to 10-GHz GaAs MMIC SPST switch

NASA Astrophysics Data System (ADS)

Yadav, Ramchandra; Kirty, V. S. R.

1998-04-01

The design of the SPST switch provides an insertion loss less than 2 dB, isolation more than 40 dB and return loss better than 17.5 dB in the frequency range of 0.1 GHz to 10 GHz. The insertion loss is improved by treating SPST switch as a 50 (Omega) artificial transmission line with incorporation of inductor in series arm and the capacitance of MESFET in the shunt arm. High isolation is ensured by the lower value of `ON' resistance of MESFET in shunt arm. Also good return loss is achieved by paralleling a 50 (Omega) resistor with capacitance of MESFET in series arm. The absence of DC blocking capacitors and replacement of large value bias chokes with 5 K(Omega) resistors effectively improved the performance of SPST switch at low frequency and also reduced the chip size. The overall chip dimension is 2.2 mm X 1.7 mm.

Analytical expression for position sensitivity of linear response beam position monitor having inter-electrode cross talk

NASA Astrophysics Data System (ADS)

Kumar, Mukesh; Ojha, A.; Garg, A. D.; Puntambekar, T. A.; Senecha, V. K.

2017-02-01

According to the quasi electrostatic model of linear response capacitive beam position monitor (BPM), the position sensitivity of the device depends only on the aperture of the device and it is independent of processing frequency and load impedance. In practice, however, due to the inter-electrode capacitive coupling (cross talk), the actual position sensitivity of the device decreases with increasing frequency and load impedance. We have taken into account the inter-electrode capacitance to derive and propose a new analytical expression for the position sensitivity as a function of frequency and load impedance. The sensitivity of a linear response shoe-box type BPM has been obtained through simulation using CST Studio Suite to verify and confirm the validity of the new analytical equation. Good agreement between the simulation results and the new analytical expression suggest that this method can be exploited for proper designing of BPM.

Traveling-Wave Membrane Photomixers

NASA Technical Reports Server (NTRS)

Wyss, R. A.; Martin, S. C.; Nakamura, B. J.; Neto, A.; Pasqualini, D.; Siegel, P. H.; Kadow, C.; Gossard, A. C.

2001-01-01

Traveling-wave photomixers have superior performance when compared with lumped area photomixers in the 1 to 3 THz frequency range. Their large active area and distributed gain mechanism assure high thermal damage threshold and elimination of the capacitive frequency roll-off. However, the losses experienced by the radio frequency wave traveling along the coplanar strips waveguide (due to underlying semi-infinite GaAs substrate) were a serious drawback. In this paper we present device designs and an experimental setup that make possible the realization of photomixers on membranes which eliminate the losses.

Performance Comparison of Finemet and Metglas Tape Cores Under Non-Sinusoidal Waveforms with DC Bias (POSTPRINT)

DTIC Science & Technology

2017-06-01

dc converter-based test system was built to intentionally introduce inductor current harmonics by varying the filter capacitance and parasitic...the inclusion of distorted waveforms obtained by varying filter capacitance. At higher frequencies, the Metglas cores were found to exhibit greater...was built to intentionally introduce inductor current harmonics by varying the filter capacitance and parasitic inductance of the test system. Both

High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator

NASA Technical Reports Server (NTRS)

Meredith, Roger D.; Neudeck, Philip G.; Ponchak, George E.; Beheim, Glenn M.; Scardelletti, Maximilian; Jordan, Jennifer L.; Chen, Liang-Yu; Spry, David J.; Krawowski, Michael J.; Hunter, Gary W.

2011-01-01

In an effort to develop harsh environment electronic and sensor technologies for aircraft engine safety and monitoring, we have used capacitive-based pressure sensors to shift the frequency of a SiC-electronics-based oscillator to produce a pressure-indicating signal that can be readily transmitted, e.g. wirelessly, to a receiver located in a more benign environment. Our efforts target 500 C, a temperature well above normal operating conditions of commercial circuits but within areas of interest in aerospace engines, deep mining applications and for future missions to the Venus atmosphere. This paper reports for the first time a ring oscillator circuit integrated with a capacitive pressure sensor, both operating at 500 C. This demonstration represents a significant step towards a wireless pressure sensor that can operate at 500 C and confirms the viability of 500 C electronic sensor systems.

Low voltage driven RF MEMS capacitive switch using reinforcement for reduced buckling

NASA Astrophysics Data System (ADS)

Bansal, Deepak; Bajpai, Anuroop; Kumar, Prem; Kaur, Maninder; Kumar, Amit; Chandran, Achu; Rangra, Kamaljit

2017-02-01

Variation in actuation voltage for RF MEMS switches is observed as a result of stress-generated buckling of MEMS structures. Large voltage driven RF-MEMS switches are a major concern in space bound communication applications. In this paper, we propose a low voltage driven RF MEMS capacitive switch with the introduction of perforations and reinforcement. The performance of the fabricated switch is compared with conventional capacitive RF MEMS switches. The pull-in voltage of the switch is reduced from 70 V to 16.2 V and the magnitude of deformation is reduced from 8 µm to 1 µm. The design of the reinforcement frame enhances the structural stiffness by 46 % without affecting the high frequency response of the switch. The measured isolation and insertion loss of the reinforced switch is more than 20 dB and 0.4 dB over the X band range.

Corrosion Resistance Characterization of Coating Systems Used to Protect Aluminum Alloys Using Electrochemical Impedance Spectroscopy and Artificial Neural Networks

NASA Astrophysics Data System (ADS)

Gambina, Federico

In this study, the corrosion protection provided by of a number of chromate and chromate-free coatings systems was characterized in detail. High-solids SrCrO4-pigmented epoxy primers applied to 2024 and 7075 substrates were subject to salt spray exposure testing for 30 days. Samples were removed periodically and an electrochemical impedance measurement (EIS) was made. Although none of the coatings tested showed visual evidence of corrosion, the total impedance of the samples decreased by as much as two orders of magnitude. An analysis of capacitance showed that the primer coatings rapidly took up water from the exposure environment, but the coating-metal remained passive despite the fact that it was wet. These results support the idea that chromate coatings protect by creating a chromate-rich electrolyte within the coating that is passivating to the underlying metal substrate. They also suggest that indications of metal substrate passivity found in the low-frequency capacitive reactance of the impedance spectra are a better indicator of corrosion protection than the total impedance. The low-frequency capacitive reactance from EIS measurements is also good at assessing the protectiveness of chromate-free coatings systems. Fifteen different coatings systems comprising high-solids, chromate-free primers and chromate-free conversion coatings were applied to 2024 and 7075 substrates. These coatings were subject to salt spray exposure and EIS measurements. All coatings were inferior to coating systems containing chromate, but changes in the capacitive reactance measured in EIS was shown to anticipate visual indications of coating failure. A predictive model based on neural networks was trained to recognize the pattern in the capacitive reactance in impedance spectra measured after 48 hours of exposure and make an estimate of remaining coating life. A sensitivity analysis was performed to prune the impedance inputs. As a result of this analysis, a very simple but highly predictive model was constructed that used low-frequency phase angle information extracted directly from EIS measurements to predict time to failure in salt spray up to 30 days of exposure. The exposure and EIS characterization of the chromate-free coatings systems enabled a ranking of the coatings systems in terms of corrosion protection provided. Coating systems were ranked according to several different methods described in the literature. Among the coatings evaluated, Deft 02GN084, a high solids, solvent-borne and Pr-containing primer coating showed best protection when used in conjunction with a number of different conversion coatings and surface pretreatments. Several different trivalent chromium conversion coatings and pretreatment were used. This general type of conversion coating appeared to provide better corrosion protection than other pretreatments whose functions were primarily surface cleaning or adhesion promotion.

Experimental investigations of electron density and ion energy distributions in dual-frequency capacitively coupled plasmas for Ar/CF{sub 4} and Ar/O{sub 2}/CF{sub 4} discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Jia; Liu, Yong-Xin; Gao, Fei

2014-01-07

The electron density and ion energy distribution (IED) are investigated in low-pressure dual-frequency capacitively coupled Ar/CF{sub 4} (90%/10%) and Ar/O{sub 2}/CF{sub 4} (80%/10%/10%) plasmas. The relations between controllable parameters, such as high-frequency (HF) power, low-frequency (LF) power and gas pressure, and plasma parameters, such as electron density and IEDs, are studied in detail by utilizing a floating hairpin probe and an energy resolved quadrupole mass spectrometer, respectively. In our experiment, the electron density is mainly determined by the HF power and slightly influenced by the LF power. With increasing gas pressure, the electron density first goes up rapidly to amore » maximum value and then decreases at various HF and LF powers. The HF power also plays a considerable role in affecting the IEDs under certain conditions and the ion energy independently controlled by the LF source is discussed here. For clarity, some numerical results obtained from a two-dimensional fluid model are presented.« less

Frequency scanning capaciflector for capacitively determining the material properties

NASA Technical Reports Server (NTRS)

Campbell, Charles E. (Inventor)

1996-01-01

A capaciflector sensor system scanned in frequency is used to detect the permittivity of the material of an object being sensed. A capaciflector sensor element, coupled to current-measuring voltage follower circuitry, is driven by a frequency swept oscillator and generates an output which corresponds to capacity as a function of the input frequency. This swept frequency information is fed into apparatus e.g. a digital computer for comparing the shape of the capacitance vs. frequency curve against characteristic capacitor vs. frequency curves for a variety of different materials which are stored, for example, in a digital memory of the computer or a database. Using a technique of pattern matching, a determination is made as to the identification of the material. Also, when desirable, the distance between the sensor and the object can be determined.

Non-linear lumped model circuit of capacitively coupled plasmas at the intermediate radio-frequencies

NASA Astrophysics Data System (ADS)

Shihab, Mohammed

2018-06-01

The discharge dynamics in geometrically asymmetric capacitively coupled plasmas are investigated via a lumped model circuit. A realistic reactor configuration is assumed. A single and two separate RF voltage sources are considered. One of the driven frequencies (the higher frequency) has been adjusted to excite a plasma series resonance, while the second frequency (the lower frequency) is in the range of the ion plasma frequency. Increasing the plasma pressure in the low pressure regime (≤ 100mTorr) is found to diminish the amplitude of the self-excited harmonics of the discharge current, however, the net result is enhancing the plasma heating. The modulation of the ion density with the lower driving frequency affect the plasma heating considerably. The net effect depends on the amplitude and the phase of the ion modulation.

Radio-frequency capacitive discharge with flowing liquid electrodes at reduced gas pressures

NASA Astrophysics Data System (ADS)

Gaisin, Al. F.; Son, E. E.; Petryakov, S. Yu.

2017-07-01

Results are presented from experimental studies of the electrophysical and spectral characteristics of the low-temperature plasma of a radio-frequency capacitive discharge excited between two flowing liquid electrodes at gas pressures of 103-105 Pa. The plasma composition, the electron density, and the vibrational and rotational temperatures of gas molecules are estimated. The types and shapes of discharge are described, and the thermal and gas-hydrodynamic processes in the discharge zone are analyzed.

High voltage electrochemical double layer capacitors using conductive carbons as additives

NASA Astrophysics Data System (ADS)

Michael, M. S.; Prabaharan, S. R. S.

We describe here an interesting approach towards electrochemical capacitors (ECCs) using graphite materials (as being used as conductive additives in rechargeable lithium-ion battery cathodes) in a Li + containing organic electrolyte. The important result is that we achieved a voltage window of >4 V, which is rather large, compared to the standard window of 2.5 V for ordinary electric double layer capacitors (DLCs). The capacitor performance was evaluated by cyclic voltammetry (CV) and galvanostatic charge/discharge techniques. From charge-discharge studies of the symmetrical device (for instance, SFG6 carbon electrode), a specific capacitance of up to 14.5 F/g was obtained at 16 mA/cm 2 current rate and at a low current rate (3 mA/cm 2), a higher value was obtained (63 F/g). The specific capacitance decreased about 25% after 1000 cycles compared to the initial discharge process. The performances of these graphites are discussed in the light of both double layer capacitance (DLC) and pseudocapacitance (battery-like behavior). The high capacitance obtained was not only derived from the current-transient capacitive behavior but is also attributed to pseudocapacitance associated with some kind of faradaic reaction, which could probably occur due to Li + intercalation/deintercalation reactions into graphitic layers of the carbons used. The ac impedance (electrochemical impedances spectroscopy, EIS) measurements were also carried out to evaluate the capacitor parameters such as equivalent series resistance (ESR) and frequency dependent capacitance ( Cfreq). Cyclic voltammetry measurements were also performed to evaluate the cycling behavior of the carbon electrodes and the non-rectangular shaped voltammograms revealed the non-zero time constant [ τ( RC)≠0] confirming that the current contains a transient as well as steady-state components.

Pros and cons of symmetrical dual-k spacer technology in hybrid FinFETs

NASA Astrophysics Data System (ADS)

Pradhan, K. P.; Andrade, M. G. C.; Sahu, P. K.

2016-12-01

The symmetrical dual-k spacer technology in hybrid FinFETs has been widely explored for better electrostatic control of the fin-based devices in nanoscale region. Since, high-k tangible spacer materials are broadly became a matter of study due to their better immunity to the short channel effects (SCEs) in nano devices. However, the only cause that restricts the circuit designers from using high-k spacer is the unreasonable increasing fringing capacitances. This work quantitatively analyzed the benefits and drawbacks of considering two different dielectric spacer materials symmetrically in either sides of the channel for the hybrid device. From the demonstrated results, the inclusion of high-k spacer predicts an effective reduction in off-state leakage along with an improvement in drive current. However, these devices have paid the cost in terms of a high total gate-to-gate capacitance (Cgg) that consequently results poor cutoff frequency (fT) and delay.

Fast semi-analytical method for precise prediction of ion energy distribution functions and sheath electric field in multi-frequency capacitively coupled plasmas

NASA Astrophysics Data System (ADS)

Chen, Wencong; Zhang, Xi; Diao, Dongfeng

2018-05-01

We propose a fast semi-analytical method to predict ion energy distribution functions and sheath electric field in multi-frequency capacitively coupled plasmas, which are difficult to measure in commercial plasma reactors. In the intermediate frequency regime, the ion density within the sheath is strongly modulated by the low-frequency sheath electric field, making the time-independent ion density assumption employed in conventional models invalid. Our results are in a good agreement with experimental measurements and computer simulations. The application of this method will facilitate the understanding of ion–material interaction mechanisms and development of new-generation plasma etching devices.

A wide-range 22-GHz LC-based CMOS voltage-controlled oscillator

NASA Astrophysics Data System (ADS)

Gharbieh, Karam; Ranneh, Mohammed; Abugharbieh, Khaldoon

2018-06-01

This work presents a novel voltage-controlled oscillator (VCO) design and simulations that combine a varactor bank with a transformer in the LC tank to achieve a high-frequency range. While the varactor bank is responsible for changing the capacitance in the LC tank, the transformer acts as a means to change the value of the inductance, hence allowing tune-ability in the two main components of the VCO. A control mechanism utilises a mixed-mode circuit consisting of comparators and a state machine. It allows efficient tuning of the VCO by controlling the capacitance and transformer in the LC tank. The VCO has a 10.75-22.43 GHz frequency range and the VCO gain, KVCO, is kept at a low value ranging from 98.6 to 175.7 MHz/V. The simulated phase noise is -111 dBc/Hz at 1 MHz offset from the 10.75 GHz oscillation frequency. The circuit is designed and simulated in 28 nm CMOS technology and uses a 1 V supply drawing a typical power of 14.74 mW.

Slope and amplitude asymmetry effects on low frequency capacitively coupled carbon tetrafluoride plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bruneau, B., E-mail: bastien.bruneau@polytechnique.edu; Johnson, E.; Korolov, I.

2016-04-28

We report investigations of capacitively coupled carbon tetrafluoride (CF{sub 4}) plasmas excited with tailored voltage waveforms containing up to five harmonics of a base frequency of 5.5 MHz. The impact of both the slope asymmetry, and the amplitude asymmetry, of these waveforms on the discharge is examined by combining experiments with particle-in-cell simulations. For all conditions studied herein, the discharge is shown to operate in the drift-ambipolar mode, where a comparatively large electric field in the plasma bulk (outside the sheaths) is the main mechanism for electron power absorption leading to ionization. We show that both types of waveform asymmetries stronglymore » influence the ion energy at the electrodes, with the particularity of having the highest ion flux on the electrode where the lowest ion energy is observed. Even at the comparatively high pressure (600 mTorr) and low fundamental frequency of 5.5 MHz used here, tailoring the voltage waveforms is shown to efficiently create an asymmetry of both the ion energy and the ion flux in geometrically symmetric reactors.« less

Fabrication and optimization of a whiskerless Schottky barrier diode for submillimeter wave applications

NASA Technical Reports Server (NTRS)

Bishop, W.; Mattauch, R. J.

1990-01-01

The following accomplishments were made towards the goal of an optimized whiskerless diode chip for submillimeter wavelength applications. (1) Surface channel whiskerless diode structure was developed which offers excellent DC and RF characteristics, reduced shunt capacitance and simplified fabrication compared to mesa and proton isolated structures. (2) Reliable fabrication technology was developed for the surface channel structure. The new anode plating technology is a major improvement. (3) DC and RF characterization of the surface channel diode was compared with whisker contacted diodes. This data indicates electrical performance as good as the best reported for similar whisker contacted devices. (4) Additional batches of surface channel diodes were fabricated with excellent I-V and reduced shunt capacitance. (5) Large scale capacitance modelinng was done for the planar diode structure. This work revealed the importance of removing the substrate gallium arsenide for absolute minimum pad capacitance. (6) A surface channel diode was developed on quartz substrate and this substrate was completely removed after diode mounting for minimum parasitic capacitance. This work continues with the goal of producing excellent quality submillimeter wavelength planar diodes which satisfy the requirements of easy handling and robustness. These devices will allow the routine implementation of Schottky receivers into space-based applications at frequencies as high as 1 THz, and, in the future, beyond.

Design and construction of high-frequency magnetic probe system on the HL-2A tokamak

NASA Astrophysics Data System (ADS)

Liang, S. Y.; Ji, X. Q.; Sun, T. F.; Xu, Yuan; Lu, J.; Yuan, B. S.; Ren, L. L.; Yang, Q. W.

2017-12-01

A high-frequency magnetic probe system is designed, calibrated and constructed on the HL-2A tokamak. To investigate the factors which affect the probe frequency response, the inductance and capacitance in the probe system are analyzed using an equivalent circuit. Suitable sizes and turn number of the coil, and the length of transmission cable are optimized based on the theory and detailed test in the calibration. To deal with the frequency response limitation and bake-out, the ceramic grooved technique is used and the probe is wound with a bare copper wire. A cascade filter is manufactured with a suitable bandwidth as well as a good phase consistency between channels. The system has been used in the experiment to measure high frequency (≤300 kHz) magnetohydrodynamic fluctuations, which can meet the requirement of physical analysis on HL-2A.

Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer

NASA Astrophysics Data System (ADS)

Matsumoto, Tsubasa; Kato, Hiromitsu; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Yamasaki, Satoshi; Imura, Masataka; Ueda, Akihiro; Inokuma, Takao; Tokuda, Norio

2018-04-01

The electrical properties of Al2O3/p-type diamond (111) MOS capacitors were studied with the goal of furthering diamond-based semiconductor research. To confirm the formation of an inversion layer in the p-type diamond body, an n-type layer for use as a minority carrier injection layer was selectively deposited onto p-type diamond. To form the diamond MOS capacitors, Al2O3 was deposited onto OH-terminated diamond using atomic layer deposition. The MOS capacitor showed clear inversion capacitance at 10 Hz. The minority carrier injection from the n-type layer reached the inversion n-channel diamond MOS field-effect transistor (MOSFET). Using the high-low frequency capacitance method, the interface state density, D it, within an energy range of 0.1-0.5 eV from the valence band edge energy, E v, was estimated at (4-9) × 1012 cm-2 eV-1. However, the high D it near E v remains an obstacle to improving the field effect mobility for the inversion p-channel diamond MOSFET.

Influence of the normal modes on the plasma uniformity in large scale CCP reactors

NASA Astrophysics Data System (ADS)

Eremin, Denis; Brinkmann, Ralf Peter; Mussenbrock, Thomas; Lane, Barton; Matsukuma, Masaaki; Ventzek, Peter

2016-09-01

Large scale capacitively coupled plasmas (CCP) driven by sources with high frequency components often exhibit phenomena which are absent in relatively well understood small scale CCPs driven at low frequencies. Of particular interest are such phenomena which affect discharge parameters of direct relevance to the plasma processing applications. One of such parameters is plasma uniformity. By using a self-consistent 2d3v Particle-in-cell/Monte-Carlo (PIC/MCC) code parallelized on GPU we have been able to show that uniformity of the plasma generated is influenced predominantly by two factors, the ionization pattern caused by high-energy electrons and the average temperature of low-energy plasma electrons. The heating mechanisms for these two groups of electrons appear to be different leading to different transversal (radial) profiles of the corresponding factors, which is well captured by the kinetic PIC/MCC code. We find that the heating mechanisms are intrinsically connected with excitation of normal modes inherent to a plasma-filled CCP reactor. In this work we study the wave nature of these phenomena, such as their excitation, propagation, and interaction with electrons. Supported by SFB-TR 87 project of the German Research Foundation and by the ``Experimental and numerical analysis of very high frequency capacitively coupled plasma discharges'' mutual research project between RUB and Tokyo Electron Ltd.

High dielectric hyperbranched polyaniline materials.

PubMed

Yan, X Z; Goodson, T

2006-08-03

New organic materials for the purpose of high speed capacitor applications are discussed. The effect of the microcrystalline size dependence of different polyaniline polymeric systems on the dielectric constant is investigated. Two different methods are described for the preparation of the polyaniline dielectric materials. By sonication polymerization, the prepared polyaniline with a suggested hyperbranched structure showed much larger microcrystalline domains in comparison to the conventional linear polyaniline. Investigations of the dielectric constant and capacitance at a relatively high frequency (>100 kHz) suggested that the system with the larger microcrystalline domains (hyperbranched) gives rise to a larger dielectric constant. The mechanism of the increased dielectric response at higher frequencies is investigated by EPR spectroscopy, and these results suggest that delocalized polarons may provide a way to enhance the dielectric response at high frequency.

Impact of excitation waveform on the frequency stability of electrostatically-actuated micro-electromechanical oscillators

NASA Astrophysics Data System (ADS)

Juillard, J.; Brenes, A.

2018-05-01

In this paper, the frequency stability of high-Q electrostatically-actuated MEMS oscillators with cubic restoring forces, and its relation with the amplitude, the phase and the shape of the excitation waveform, is studied. The influence on close-to-the carrier frequency noise of additive processes (such as thermomechanical noise) or parametric processes (bias voltage fluctuations, feedback phase fluctuations, feedback level fluctuations) is taken into account. It is shown that the optimal operating conditions of electrostatically-actuated MEMS oscillators are highly waveform-dependent, a factor that is largely overlooked in the existing literature. This simulation-based study covers the cases of harmonic and pulsed excitation of a parallel-plate capacitive MEMS resonator.

Resonant capacitive MEMS acoustic emission transducers

NASA Astrophysics Data System (ADS)

Ozevin, D.; Greve, D. W.; Oppenheim, I. J.; Pessiki, S. P.

2006-12-01

We describe resonant capacitive MEMS transducers developed for use as acoustic emission (AE) detectors, fabricated in the commercial three-layer polysilicon surface micromachining process (MUMPs). The 1 cm square device contains six independent transducers in the frequency range between 100 and 500 kHz, and a seventh transducer at 1 MHz. Each transducer is a parallel plate capacitor with one plate free to vibrate, thereby causing a capacitance change which creates an output signal in the form of a current under a dc bias voltage. With the geometric proportions we employed, each transducer responds with two distinct resonant frequencies. In our design the etch hole spacing was chosen to limit squeeze film damping and thereby produce an underdamped vibration when operated at atmospheric pressure. Characterization experiments obtained by capacitance and admittance measurements are presented, and transducer responses to physically simulated AE source are discussed. Finally, we report our use of the device to detect acoustic emissions associated with crack initiation and growth in weld metal.

Capacitive Sensors for Feedback Control of Microfluidic Devices

NASA Astrophysics Data System (ADS)

Chen, J. Z.; Darhuber, A. A.; Troian, S. M.; Wagner, S.

2003-11-01

Automation of microfluidic devices based on thermocapillary flow [1] requires feedback control and detection techniques for monitoring the location, and ideally also composition and volume of liquid droplets. For this purpose we have developed a co-planar capacitance technique with a sensitivity of 0.07 pF at a frequency of 370 kHz. The variation in capacitance due to the presence of a droplet is monitored by the output frequency of an RC relaxation oscillator consisting of two inverters, one resistor and one capacitor. We discuss the performance of this coplanar sensor as a function of the electrode dimensions and geometry. These geometric variables determine the electric field penetration depth within the liquid, which in our studies ranged from 30 to 450 microns. Numerical solutions for the capacitance corresponding to the exact fabricated geometry agree very well with experimental data. An approximate analytic solution, which ignores fringe field effects, provides a simple but excellent guide for design development. [1] A. A. Darhuber et al., Appl. Phys. Lett. 82, 657 (2003).

Electrical capacitance clearanceometer

NASA Technical Reports Server (NTRS)

Hester, Norbert J. (Inventor); Hornbeck, Charles E. (Inventor); Young, Joseph C. (Inventor)

1992-01-01

A hot gas turbine engine capacitive probe clearanceometer is employed to measure the clearance gap or distance between blade tips on a rotor wheel and its confining casing under operating conditions. A braze sealed tip of the probe carries a capacitor electrode which is electrically connected to an electrical inductor within the probe which is inserted into a turbine casing to position its electrode at the inner surface of the casing. Electrical power is supplied through a voltage controlled variable frequency oscillator having a tuned circuit in which the probe is a component. The oscillator signal is modulated by a change in electrical capacitance between the probe electrode and a passing blade tip surface while an automatic feedback correction circuit corrects oscillator signal drift. A change in distance between a blade tip and the probe electrode is a change in capacitance therebetween which frequency modulates the oscillator signal. The modulated oscillator signal which is then processed through a phase detector and related circuitry to provide an electrical signal is proportional to the clearance gap.

A method for improving the drop test performance of a MEMS microphone

NASA Astrophysics Data System (ADS)

Winter, Matthias; Ben Aoun, Seifeddine; Feiertag, Gregor; Leidl, Anton; Scheele, Patrick; Seidel, Helmut

2009-05-01

Most micro electro mechanical system (MEMS) microphones are designed as capacitive microphones where a thin conductive membrane is located in front of a rigid counter electrode. The membrane is exposed to the environment to convert sound into vibrations of the membrane. The movement of the membrane causes a change in the capacitance between the membrane and the counter electrode. The resonance frequency of the membrane is designed to occur above the acoustic spectrum to achieve a linear frequency response. To obtain a good sensitivity the thickness of the membrane must be as small as possible, typically below 0.5 μm. These fragile membranes may be damaged by rapid pressure changes. For cell phones, drop tests are among the most relevant reliability tests. The extremely high acceleration during the drop impact leads to fast pressure changes in the microphone which could result in a rupture of the membrane. To overcome this problem a stable protection layer can be placed at a small distance to the membrane. The protective layer has small holes to form a low pass filter for air pressure. The low pass filter reduces pressure changes at high frequencies so that damage to the membrane by excitation in resonance will be prevented.

A Micromachined Capacitive Pressure Sensor Using a Cavity-Less Structure with Bulk-Metal/Elastomer Layers and Its Wireless Telemetry Application

PubMed Central

Takahata, Kenichi; Gianchandani, Yogesh B.

2008-01-01

This paper reports a micromachined capacitive pressure sensor intended for applications that require mechanical robustness. The device is constructed with two micromachined metal plates and an intermediate polymer layer that is soft enough to deform in a target pressure range. The plates are formed of micromachined stainless steel fabricated by batch-compatible micro-electro-discharge machining. A polyurethane room-temperature-vulcanizing liquid rubber of 38-μm thickness is used as the deformable material. This structure eliminates both the vacuum cavity and the associated lead transfer challenges common to micromachined capacitive pressure sensors. For frequency-based interrogation of the capacitance, passive inductor-capacitor tanks are fabricated by combining the capacitive sensor with an inductive coil. The coil has 40 turns of a 127-μm-diameter copper wire. Wireless sensing is demonstrated in liquid by monitoring the variation in the resonant frequency of the tank via an external coil that is magnetically coupled with the tank. The sensitivity at room temperature is measured to be 23-33 ppm/KPa over a dynamic range of 340 KPa, which is shown to match a theoretical estimation. Temperature dependence of the tank is experimentally evaluated. PMID:27879824

Anomalous C-V response correlated to relaxation processes in TiO{sub 2} thin film based-metal-insulator-metal capacitor: Effect of titanium and oxygen defects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kahouli, A., E-mail: kahouli.kader@yahoo.fr; University Grenoble Alpes, G2Elab, F-38000 Grenoble; Marichy, C.

2015-04-21

Capacitance-voltage (C–V) and capacitance-frequency (C–f) measurements are performed on atomic layer deposited TiO{sub 2} thin films with top and bottom Au and Pt electrodes, respectively, over a large temperature and frequency range. A sharp capacitance peak/discontinuity (C–V anomalous) is observed in the C–V characteristics at various temperatures and voltages. It is demonstrated that this phenomenon is directly associated with oxygen vacancies. The C–V peak irreversibility and dissymmetry at the reversal dc voltage are attributed to difference between the Schottky contacts at the metal/TiO{sub 2} interfaces. Dielectric analyses reveal two relaxation processes with degeneration of the activation energy. The low trapmore » level of 0.60–0.65 eV is associated with the first ionized oxygen vacancy at low temperature, while the deep trap level of 1.05 eV is associated to the second ionized oxygen vacancy at high temperature. The DC conductivity of the films exhibits a transition temperature at 200 °C, suggesting a transition from a conduction regime governed by ionized oxygen vacancies to one governed by interstitial Ti{sup 3+} ions. Both the C–V anomalous and relaxation processes in TiO{sub 2} arise from oxygen vacancies, while the conduction mechanism at high temperature is governed by interstitial titanium ions.« less

A high-frequency transimpedance amplifier for CMOS integrated 2D CMUT array towards 3D ultrasound imaging.

PubMed

Huang, Xiwei; Cheong, Jia Hao; Cha, Hyouk-Kyu; Yu, Hongbin; Je, Minkyu; Yu, Hao

2013-01-01

One transimpedance amplifier based CMOS analog front-end (AFE) receiver is integrated with capacitive micromachined ultrasound transducers (CMUTs) towards high frequency 3D ultrasound imaging. Considering device specifications from CMUTs, the TIA is designed to amplify received signals from 17.5MHz to 52.5MHz with center frequency at 35MHz; and is fabricated in Global Foundry 0.18-µm 30-V high-voltage (HV) Bipolar/CMOS/DMOS (BCD) process. The measurement results show that the TIA with power-supply 6V can reach transimpedance gain of 61dBΩ and operating frequency from 17.5MHz to 100MHz. The measured input referred noise is 27.5pA/√Hz. Acoustic pulse-echo testing is conducted to demonstrate the receiving functionality of the designed 3D ultrasound imaging system.

Off-resonance frequency operation for power transfer in a loosely coupled air core transformer

DOEpatents

Scudiere, Matthew B

2012-11-13

A power transmission system includes a loosely coupled air core transformer having a resonance frequency determined by a product of inductance and capacitance of a primary circuit including a primary coil. A secondary circuit is configured to have a substantially same product of inductance and capacitance. A back EMF generating device (e.g., a battery), which generates a back EMF with power transfer, is attached to the secondary circuit. Once the load power of the back EMF generating device exceeds a certain threshold level, which depends on the system parameters, the power transfer can be achieved at higher transfer efficiency if performed at an operating frequency less than the resonance frequency, which can be from 50% to 95% of the resonance frequency.

A Transfer Voltage Simulation Method for Generator Step Up Transformers

NASA Astrophysics Data System (ADS)

Funabashi, Toshihisa; Sugimoto, Toshirou; Ueda, Toshiaki; Ametani, Akihiro

It has been found from measurements for 13 sets of GSU transformers that a transfer voltage of a generator step-up (GSU) transformer involves one dominant oscillation frequency. The frequency can be estimated from the inductance and capacitance values of the GSU transformer low-voltage-side. This observation has led to a new method for simulating a GSU transformer transfer voltage. The method is based on the EMTP TRANSFORMER model, but stray capacitances are added. The leakage inductance and the magnetizing resistance are modified using approximate curves for their frequency characteristics determined from the measured results. The new method is validated in comparison with the measured results.

Electrical Properties and Power Considerations of a Piezoelectric Actuator

NASA Technical Reports Server (NTRS)

Jordan, T.; Ounaies, Z.; Tripp, J.; Tcheng, P.

1999-01-01

This paper assesses the electrical characteristics of piezoelectric wafers for use in aeronautical applications such as active noise control in aircraft. Determination of capacitive behavior and power consumption is necessary to optimize the system configuration and to design efficient driving electronics. Empirical relations are developed from experimental data to predict the capacitance and loss tangent of a PZT5A ceramic as nonlinear functions of both applied peak voltage and driving frequency. Power consumed by the PZT is the rate of energy required to excite the piezoelectric system along with power dissipated due to dielectric loss and mechanical and structural damping. Overall power consumption is thus quantified as a function of peak applied voltage and driving frequency. It was demonstrated that by incorporating the variation of capacitance and power loss with voltage and frequency, satisfactory estimates of power requirements can be obtained. These relations allow general guidelines in selection and application of piezoelectric actuators and driving electronics for active control applications.

Modification of carbon fabrics by radio-frequency capacitive discharge at low pressure to regulate mechanical properties of carbon fiber reinforced plastics based on it

NASA Astrophysics Data System (ADS)

Garifullin, A. R.; Krasina, I. V.; Skidchenko, E. A.; Shaekhov, M. F.; Tikhonova, N. V.

2017-01-01

To increase the values of mechanical properties of carbon fiber (CF) composite materials used in sports equipment production the method of radio-frequency capacitive (RFC) low-pressure plasma treatment in air was proposed. Previously it was found that this type of modification allows to effectively regulate the surface properties of fibers of different nature. This treatment method differs from the traditional ones by efficiency and environmental friendliness as it does not require the use of aggressive, environmentally hazardous chemicals. In this paper it was established that RFC low-pressure air plasma treatment of carbon fabrics enhances the interlaminar shear strength (ILSS) of carbon fiber reinforced plastic (CFRP). As a result of experimental studies of CF by Fourier Transform Infrared (FTIR) spectroscopy method it was proved that after radio-frequency capacitive plasma treatment at low pressure in air the oxygen-containing functional groups is grafted on the surface. These groups improve adhesion at the interface “matrix-fiber”.

Graphene Quantum Capacitors for High Frequency Tunable Analog Applications.

PubMed

Moldovan, Clara F; Vitale, Wolfgang A; Sharma, Pankaj; Tamagnone, Michele; Mosig, Juan R; Ionescu, Adrian M

2016-08-10

Graphene quantum capacitors (GQC) are demonstrated to be enablers of radio-frequency (RF) functions through voltage-tuning of their capacitance. We show that GQC complements MEMS and MOSFETs in terms of performance for high frequency analog applications and tunability. We propose a CMOS compatible fabrication process and report the first experimental assessment of their performance at microwaves frequencies (up to 10 GHz), demonstrating experimental GQCs in the pF range with a tuning ratio of 1.34:1 within 1.25 V, and Q-factors up to 12 at 1 GHz. The figures of merit of graphene variable capacitors are studied in detail from 150 to 350 K. Furthermore, we describe a systematic, graphene specific approach to optimize their performance and predict the figures of merit achieved if such a methodology is applied.

Current source enhancements in Electrical Impedance Spectroscopy (EIS) to cancel unwanted capacitive effects

NASA Astrophysics Data System (ADS)

Zarafshani, Ali; Bach, Thomas; Chatwin, Chris; Xiang, Liangzhong; Zheng, Bin

2017-03-01

Electrical Impedance Spectroscopy (EIS) has emerged as a non-invasive imaging modality to detect and quantify functional or electrical properties related to the suspicious tumors in cancer screening, diagnosis and prognosis assessment. A constraint on EIS systems is that the current excitation system suffers from the effects of stray capacitance having a major impact on the hardware subsystem as the EIS is an ill-posed inverse problem which depends on the noise level in EIS measured data and regularization parameter in the reconstruction algorithm. There is high complexity in the design of stable current sources, with stray capacitance reducing the output impedance and bandwidth of the system. To confront this, we have designed an EIS current source which eliminates the effect of stray capacitance and other impacts of the capacitance via a variable inductance. In this paper, we present a combination of operational CCII based on a generalized impedance converter (OCCII-GIC) with a current source. The aim of this study is to use the EIS system as a biomedical imaging technique, which is effective in the early detection of breast cancer. This article begins with the theoretical description of the EIS structure, current source topologies and proposes a current conveyor in application of a Gyrator to eliminate the current source limitations and its development followed by simulation and experimental results. We demonstrated that the new design could achieve a high output impedance over a 3MHz frequency bandwidth when compared to other types of GIC circuits combined with an improved Howland topology.

High-frequency self-aligned graphene transistors with transferred gate stacks

PubMed Central

Cheng, Rui; Bai, Jingwei; Liao, Lei; Zhou, Hailong; Chen, Yu; Liu, Lixin; Lin, Yung-Chen; Jiang, Shan; Huang, Yu; Duan, Xiangfeng

2012-01-01

Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on a sacrificial substrate, and then transferred onto arbitrary substrates with graphene on top. A self-aligned process, enabled by the unique structure of the transferred gate stacks, is then used to position precisely the source and drain electrodes with minimized access resistance or parasitic capacitance. This process has therefore enabled scalable fabrication of self-aligned graphene transistors with unprecedented performance including a record-high cutoff frequency up to 427 GHz. Our study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra–high-frequency circuits. PMID:22753503

Multimode and multistate ladder oscillator and frequency recognition device

NASA Technical Reports Server (NTRS)

Aumann, Herbert M. (Inventor)

1976-01-01

A ladder oscillator composed of capacitive and inductive impedances connected together to form a ladder network which has a chosen number N oscillation modes at N different frequencies. Each oscillation mode is characterized by a unique standing wave voltage pattern along the nodes of the ladder oscillator, with the mode in which the ladder oscillator is oscillating being determinable from the amplitudes or phase of the oscillations at the nodes. A logic circuit may be connected to the nodes of the oscillator to compare the phases of selected nodes and thereby determine which mode the oscillator is oscillating in. A ladder oscillator composed of passive capacitive and inductive impedances can be utilized as a frequency recognition device, since the passive ladder oscillator will display the characteristic standing wave patterns if an input signal impressed upon the ladder oscillator is close to one of the mode frequencies of the oscillator. A CL ladder oscillator having series capacitive impedances and shunt inductive impedances can exhibit sustained and autonomous oscillations if active nonlinear devices are connected in parallel with the shunt inductive impedances. The active CL ladder oscillator can be synchronized to input frequencies impressed upon the oscillator, and will continue to oscillate after the input signal has been removed at a mode frequency which is, in general, nearest to the input signal frequency. Autonomous oscillations may also be obtained as desired from the active CL ladder oscillator at the mode frequencies.

Effect of Impedance Relaxation in Conductance Mechanisms in TiO2/ITO/ZnO:Al/p-Si Heterostructure

NASA Astrophysics Data System (ADS)

Nouiri, M.; El Mir, L.

2018-03-01

The electrical conduction of a TiO2/ITO/ZnO:Al/p-Si structure under alternating-current excitation was investigated in the temperature range of 80 K to 300 K. The frequency dependence of the capacitance and conductance revealed the response of a thermally activated trap characterized by activation energy of about 140 meV. The frequency dependence of the conductance obeyed the universal dynamic response according to the common relation G = Aωs . The temperature dependence of the frequency exponent s illustrates that, in the low frequency range, conduction is governed by the correlated barrier hopping (CBH) mechanism involving two distinct energy levels for all investigated temperatures. For the high frequency region, conduction takes place according to the overlapping large-polaron tunneling mechanism at low temperatures but the CBH mechanism becomes dominant in the high temperature region. This difference in electrical behavior between low and high temperatures can be attributed to the dominance of dielectric relaxation at low compared with high temperatures.

Growth and interface properties of Au Schottky contact on ZnO grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Asghar, M.; Mahmood, K.; Malik, Faisal; Hasan, M. A.

2013-06-01

In this paper, we have discussed the growth of ZnO by molecular beam epitaxy (MBE) and interface properties of Au Schottky contacts on grown sample. After the verification of structure and surface properties by X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM), respectively, Au metal contact was fabricated by e-beam evaporation to study contact properties. The high value of ideality factor (2.15) and barrier height (0.61 eV) at room temperature obtained by current-voltage (I-V) characteristics suggested the presence of interface states between metal and semiconductor. To confirm this observation we carried out frequency dependent capacitance-voltage (C-V) and conductance-voltage (G-V) demonstrated that the capacitance of diode decreased with increasing frequency. The reason of this behavior is related with density of interface states, series resistance and image force lowering. The C-2-V plot drawn to calculate the carrier concentration and barrier height with values 1.4×1016 cm-3 and 0.92 eV respectively. Again, high value of barrier height obtained from C-V as compared to the value obtained from I-V measurements revealed the presence of interface states. The density of these interface states (Dit) was calculated by well known Hill-Coleman method. The calculated value of Dit at 1 MHz frequency was 2×1012 eV-1 cm-2. The plot between interface states and frequency was also drawn which demonstrated that density of interface states had inverse proportion with measuring frequency.

Electrochemical capacitance modulation in an interacting mesoscopic capacitor induced by internal charge transfer

NASA Astrophysics Data System (ADS)

Liu, Wei; He, Jianhong; Guo, Huazhong; Gao, Jie

2018-04-01

We report experiments on the dynamic response of an interacting mesoscopic capacitor consisting of a quantum dot with two confined spin-split levels of the lowest Landau level. In high magnetic fields, states inside the dot are regulated by a mixture of Coulomb interaction and Landau-level quantization, and electrons distribute on two spatially separated regions. Quantum point contact voltage and magnetic field are employed to manipulate the number and distribution of electrons inside the quantum dot. We find that the periodicity of the electrochemical capacitance oscillations is dominated by the charging energy, and their amplitudes, due to internal charge transfer and strong internal capacitive coupling, show rich variations of modulations. Magnetocapacitance displays a sawtoothlike manner and may differ in tooth directions for different voltages, which, we demonstrate, result from a sawtoothlike electrochemical potential change induced by internal charge transfer and field-sensitive electrostatic potential. We further build a charge stability diagram, which, together with all other capacitance properties, is consistently interpreted in terms of a double-dot model. The demonstrated technique is of interest as a tool for fast and sensitive charge state readout of a double-quantum-dot qubit in the gigahertz frequency quantum electronics.

High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

PubMed Central

Khaira, Navjot

2014-01-01

This paper presents a novel design of single-pole four-throw (SP4T) RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm2. The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt or capacitive switches have been used in each port to improve the isolation for higher frequencies. The proposed SP4T switch provides excellent RF performances with isolation better than 70.64 dB and insertion loss less than 0.72 dB for X-band between the input port and each output port. PMID:24711730

Carbon-Nanotube Schottky Diodes

NASA Technical Reports Server (NTRS)

Manohara, Harish; Wong, Eric; Schlecht, Erich; Hunt, Brian; Siegel, Peter

2006-01-01

Schottky diodes based on semiconducting single-walled carbon nanotubes are being developed as essential components of the next generation of submillimeter-wave sensors and sources. Initial performance predictions have shown that the performance characteristics of these devices can exceed those of the state-of-the-art solid-state Schottky diodes that have been the components of choice for room-temperature submillimeter-wave sensors for more than 50 years. For state-of-the-art Schottky diodes used as detectors at frequencies above a few hundred gigahertz, the inherent parasitic capacitances associated with their semiconductor junction areas and the resistances associated with low electron mobilities limit achievable sensitivity. The performance of such a detector falls off approximately exponentially with frequency above 500 GHz. Moreover, when used as frequency multipliers for generating signals, state-of-the-art solid-state Schottky diodes exhibit extremely low efficiencies, generally putting out only micro-watts of power at frequencies up to 1.5 THz. The shortcomings of the state-of-the-art solid-state Schottky diodes can be overcome by exploiting the unique electronic properties of semiconducting carbon nanotubes. A single-walled carbon nanotube can be metallic or semiconducting, depending on its chirality, and exhibits high electron mobility (recently reported to be approx.= 2x10(exp 5)sq cm/V-s) and low parasitic capacitance. Because of the narrowness of nanotubes, Schottky diodes based on carbon nanotubes have ultra-small junction areas (of the order of a few square nanometers) and consequent junction capacitances of the order of 10(exp -18) F, which translates to cutoff frequency >5 THz. Because the turn-on power levels of these devices are very low (of the order of nano-watts), the input power levels needed for pumping local oscillators containing these devices should be lower than those needed for local oscillators containing state-of-the-art solid-state Schottky diodes.

The effects of low-temperature plasma treatment on the capillary properties of inorganic fibers

NASA Astrophysics Data System (ADS)

Garifullin, A. R.; Abdullin, I. Sh; Skidchenko, E. A.; Krasina, I. V.; Shaekhov, M. F.

2016-01-01

Solving the problem of achieving high adhesion between the components in the polymeric composite material (PCM) based on carbon fibers (CF) and basalt fibers (BF) is proposed to use the radio-frequency (RF) plasma under lower pressure by virtue of efficiency, environmental friendliness and rationality of the method. The paper gives the results of studies of the properties of CF and BF after RF capacitive discharge plasma treatment. The plasma modification modes of carbon and basalt fiber were investigated. The efficiency of treatment tool in surface properties modification of carbon and basalt fibers was found, namely capillary properties of CF and BF were researched. The optimal treatment modes were selected. It was found that the method of plasma modification in the radio-frequency capacitive discharge under the lower pressure contributes enhancing the capillary properties of inorganic fibers, in particular carbon and basalt ones. It shows the tendency to increase of the adhesive properties in PCM, and, consequently, the increase of the physical and mechanical properties of the products.

Investigation of Defect Distributions in SiO2/AlGaN/GaN High-Electron-Mobility Transistors by Using Capacitance-Voltage Measurement with Resonant Optical Excitation

NASA Astrophysics Data System (ADS)

Kim, Tae-Soo; Lim, Seung-Young; Park, Yong-Keun; Jung, Gunwoo; Song, Jung-Hoon; Cha, Ho-Young; Han, Sang-Woo

2018-06-01

We investigated the distributions and the energy levels of defects in SiO2/AlGaN/GaN highelectron-mobility transistors (HEMTs) by using frequency-dependent ( F- D) capacitance-voltage ( C- V) measurements with resonant optical excitation. A Schottky barrier (SB) and a metal-oxidesemiconductor (MOS) HEMT were prepared to compare the effects of defects in their respective layers. We also investigated the effects of those layers on the threshold voltage ( V th ). A drastic voltage shift in the C- V curve at higher frequencies was caused by the large number of defect levels in the SiO2/GaN interface. A significant shift in V th with additional light illumination was observed due to a charging of the defect states in the SiO2/GaN interface. The voltage shifts were attributed to the detrapping of defect states at the SiO2/GaN interface.

Aging and failure mode of electrochemical double layer capacitors during accelerated constant load tests

NASA Astrophysics Data System (ADS)

Kötz, R.; Ruch, P. W.; Cericola, D.

Electrochemical double layer capacitors of the BCAP0350 type (Maxwell Technologies) were tested under constant load conditions at different voltages and temperatures. The aging of the capacitors was monitored during the test in terms of capacitance, internal resistance and leakage current. Aging was significantly accelerated by elevated temperature or increased voltage. Only for extreme conditions at voltages of 3.5 V or temperatures above 70 °C the capacitors failed due to internal pressure build-up. No other failure events such as open circuit or short circuit were detected. Impedance measurements after the tests showed increased high frequency resistance, an increased distributed resistance and most likely an increase in contact resistance between electrode and current collector together with a loss of capacitance. Capacitors aged at elevated voltages (3.3 V) exhibited a tilting of the low frequency component, which implies an increase in the heterogeneity of the electrode surface. This feature was not observed upon aging at elevated temperatures (70 °C).

Fabrication and analysis of radiofrequency MEMS series capacitive single-pole double-throw switch

NASA Astrophysics Data System (ADS)

Bansal, Deepak; Bajpai, Anuroop; Kumar, Prem; Kaur, Maninder; Rangra, Kamaljit

2016-10-01

A compact radiofrequency (RF) MEMS single-pole double-throw (SPDT) switch based on series capacitive configuration is proposed. The critical process parameters are analyzed to improve the fabrication process. A technique of cold-hot thermal shock for lift-off method is explored. The residual stress in the structure is quantified by lancet test structures that come out to be 51 MPa. Effect of residual stress on actuation voltage is explored, which changes its value from 24 to 22 V. Resonance frequency and switching speed of the switch are 11 kHz and 44 μs, respectively, measured using laser Doppler vibrometer. Measured bandwidth of the SPDT switch is 20 GHz (5 to 25 GHz), which is verified with finite element method simulations in high frequency structure simulator©; and an equivalent LCR circuit in advanced design system©;. Insertion loss of the switch lies in -0.1 to -0.5 dB with isolation better than -20 dB for the above-mentioned bandwidth.

Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy

NASA Astrophysics Data System (ADS)

Kim, Hyoungsub; Chui, Chi On; Saraswat, Krishna C.; McIntyre, Paul C.

2003-09-01

High-k dielectric deposition processes for gate dielectric preparation on Si surfaces usually result in the unavoidable and uncontrolled formation of a thin interfacial oxide layer. Atomic layer deposition of ˜55-Å ZrO2 film on a Ge (100) substrate using ZrCl4 and H2O at 300 °C was found to produce local epitaxial growth [(001) Ge//(001) ZrO2 and [100] Ge//[100] ZrO2] without a distinct interfacial layer, unlike the situation observed when ZrO2 is deposited using the same method on Si. Relatively large lattice mismatch (˜10%) between ZrO2 and Ge produced a high areal density of interfacial misfit dislocations. Large hysteresis (>200 mV) and high frequency dispersion were observed in capacitance-voltage measurements due to the high density of interface states. However, a low leakage current density, comparable to values obtained on Si substrates, was observed with the same capacitance density regardless of the high defect density.

Alumina ceramic based high-temperature performance of wireless passive pressure sensor

NASA Astrophysics Data System (ADS)

Wang, Bo; Wu, Guozhu; Guo, Tao; Tan, Qiulin

2016-12-01

A wireless passive pressure sensor equivalent to inductive-capacitive (LC) resonance circuit and based on alumina ceramic is fabricated by using high temperature sintering ceramic and post-fire metallization processes. Cylindrical copper spiral reader antenna and insulation layer are designed to realize the wireless measurement for the sensor in high temperature environment. The high temperature performance of the sensor is analyzed and discussed by studying the phase-frequency and amplitude-frequency characteristics of reader antenna. The average frequency change of sensor is 0.68 kHz/°C when the temperature changes from 27°C to 700°C and the relative change of twice measurements is 2.12%, with high characteristic of repeatability. The study of temperature-drift characteristic of pressure sensor in high temperature environment lays a good basis for the temperature compensation methods and insures the pressure signal readout accurately.

Calibrated complex impedance of CHO cells and E. coli bacteria at GHz frequencies using scanning microwave microscopy

NASA Astrophysics Data System (ADS)

Tuca, Silviu-Sorin; Badino, Giorgio; Gramse, Georg; Brinciotti, Enrico; Kasper, Manuel; Oh, Yoo Jin; Zhu, Rong; Rankl, Christian; Hinterdorfer, Peter; Kienberger, Ferry

2016-04-01

The application of scanning microwave microscopy (SMM) to extract calibrated electrical properties of cells and bacteria in air is presented. From the S 11 images, after calibration, complex impedance and admittance images of Chinese hamster ovary cells and E. coli bacteria deposited on a silicon substrate have been obtained. The broadband capabilities of SMM have been used to characterize the bio-samples between 2 GHz and 20 GHz. The resulting calibrated cell and bacteria admittance at 19 GHz were Y cell = 185 μS + j285 μS and Y bacteria = 3 μS + j20 μS, respectively. A combined circuitry-3D finite element method EMPro model has been developed and used to investigate the frequency response of the complex impedance and admittance of the SMM setup. Based on a proposed parallel resistance-capacitance model, the equivalent conductance and parallel capacitance of the cells and bacteria were obtained from the SMM images. The influence of humidity and frequency on the cell conductance was experimentally studied. To compare the cell conductance with bulk water properties, we measured the imaginary part of the bulk water loss with a dielectric probe kit in the same frequency range resulting in a high level of agreement.

Nanoelectronics and Plasma Processing---The Next 15 Years and Beyond

NASA Astrophysics Data System (ADS)

Lieberman, Michael A.

2006-10-01

The number of transistors per chip has doubled every 2 years since 1959, and this doubling will continue over the next 15 years as transistor sizes shrink. There has been a 25 million-fold decrease in cost for the same performance, and in 15 years a desktop computer will be hundreds of times more powerful than one today. Transistors now have 37 nm (120 atoms) gate lengths and 1.5 nm (5 atoms) gate oxide thicknesses. The smallest working transistor has a 5 nm (17 atoms) gate length, close to the limiting gate length, from simulations, of about 4 nm. Plasma discharges are used to fabricate hundreds of billions of these nano-size transistors on a silicon wafer. These discharges have evolved from a first generation of ``low density'' reactors capacitively driven by a single source, to a second generation of ``high density'' reactors (inductive and electron cyclotron resonance) having two rf power sources, in order to control independently the ion flux and ion bombarding energy to the substrate. A third generation of ``moderate density'' reactors, driven capacitively by one high and one low frequency rf source, is now widely used. Recently, triple frequency and combined dc/dual frequency discharges have been investigated, to further control processing characteristics, such as ion energy distributions, uniformity, and plasma etch selectivities. There are many interesting physics issues associated with these discharges, including stochastic heating of discharge electrons by dual frequency sheaths, nonlinear frequency interactions, powers supplied by the multi-frequency sources, and electromagnetic effects such as standing waves and skin effects. Beyond the 4 nm transistor limit lies a decade of further performance improvements for conventional nanoelectronics, and beyond that, a dimly-seen future of spintronics, single-electron transistors, cross-bar latches, and molecular electronics.

Experimental investigation of standing wave effect in dual-frequency capacitively coupled argon discharges: role of a low-frequency source

NASA Astrophysics Data System (ADS)

Zhao, Kai; Liu, Yong-Xin; Kawamura, E.; Wen, De-Qi; Lieberman, M. A.; Wang, You-Nian

2018-05-01

It is well known that the plasma non-uniformity caused by the standing wave effect has brought about great challenges for plasma material processing. To improve the plasma uniformity, a low-frequency (LF) power source is introduced into a 100 MHz very-high-frequency (VHF) capacitively coupled argon plasma reactor. The effect of the LF parameters (LF voltage amplitude ϕ L and LF source f L) on the radial profile of plasma density has been investigated by utilizing a hairpin probe. The result at a low pressure (1 Pa) is compared to the one obtained by a 2D fluid-analytical capacitively coupled plasma model, showing good agreement in the plasma density radial profile. The experimental results show that the plasma density profile exhibits different dependences on ϕ L and f L at different gas pressures/electrode driven types (i.e., the two rf sources are applied on one electrode (case I) and separate electrodes (case II)). At low pressures (e.g., 8 Pa), the pronounced standing wave effect revealed in a VHF discharge can be suppressed at a relatively high ϕ L or a low f L in case I, because the HF sheath heating is largely weakened due to strong modulation by the LF source. By contrast, ϕ L and f L play insignificant roles in suppressing the standing wave effect in case II. At high pressures (e.g., 20 Pa), the opposite is true. The plasma density radial profile is more sensitive to ϕ L and f L in case II than in case I. In case II, the standing wave effect is surprisingly enhanced with increasing ϕ L at higher pressures; however, the center-high density profile caused by the standing wave effect can be compensated by increasing f L due to the enhanced electrostatic edge effect dominated by the LF source. In contrast, the density radial profile shows a much weaker dependence on ϕ L and f L in case I at higher pressures. To understand the different roles of ϕ L and f L, the electron excitation dynamics in each case are analyzed based on the measured spatio-temporal distributions of the electron-impact excitation rate by phase resolved optical emission spectroscopy.

High sensitivity capacitive MEMS microphone with spring supported diaphragm

NASA Astrophysics Data System (ADS)

Mohamad, Norizan; Iovenitti, Pio; Vinay, Thurai

2007-12-01

Capacitive microphones (condenser microphones) work on a principle of variable capacitance and voltage by the movement of its electrically charged diaphragm and back plate in response to sound pressure. There has been considerable research carried out to increase the sensing performance of microphones while reducing their size to cater for various modern applications such as mobile communication and hearing aid devices. This paper reviews the development and current performance of several condenser MEMS microphone designs, and introduces a microphone with spring supported diaphragm to further improve condenser microphone performance. The numerical analysis using Coventor FEM software shows that this new microphone design has a higher mechanical sensitivity compared to the existing edge clamped flat diaphragm condenser MEMS microphone. The spring supported diaphragm is shown to have a flat frequency response up to 7 kHz and more stable under the variations of the diaphragm residual stress. The microphone is designed to be easily fabricated using the existing silicon fabrication technology and the stability against the residual stress increases its reproducibility.

A Micro-Resonant Gas Sensor with Nanometer Clearance between the Pole Plates

PubMed Central

Xu, Lizhong

2018-01-01

In micro-resonant gas sensors, the capacitive detection is widely used because of its simple structure. However, its shortcoming is a weak signal output caused by a small capacitance change. Here, we reduced the initial clearance between the pole plates to the nanometer level, and increased the capacitance between the pole plates and its change during resonator vibration. We propose a fabricating process of the micro-resonant gas sensor by which the initial clearance between the pole plates is reduced to the nanometer level and a micro-resonant gas sensor with 200 nm initial clearance is fabricated. With this sensor, the resonant frequency shifts were measured when they were exposed to several different vapors, and high detection accuracies were obtained. The detection accuracy with respect to ethanol vapor was 0.4 ppm per Hz shift, and the detection accuracy with respect to hydrogen and ammonias vapors was 3 ppm and 0.5 ppm per Hz shift, respectively. PMID:29373546

A Micro-Resonant Gas Sensor with Nanometer Clearance between the Pole Plates.

PubMed

Fu, Xiaorui; Xu, Lizhong

2018-01-26

In micro-resonant gas sensors, the capacitive detection is widely used because of its simple structure. However, its shortcoming is a weak signal output caused by a small capacitance change. Here, we reduced the initial clearance between the pole plates to the nanometer level, and increased the capacitance between the pole plates and its change during resonator vibration. We propose a fabricating process of the micro-resonant gas sensor by which the initial clearance between the pole plates is reduced to the nanometer level and a micro-resonant gas sensor with 200 nm initial clearance is fabricated. With this sensor, the resonant frequency shifts were measured when they were exposed to several different vapors, and high detection accuracies were obtained. The detection accuracy with respect to ethanol vapor was 0.4 ppm per Hz shift, and the detection accuracy with respect to hydrogen and ammonias vapors was 3 ppm and 0.5 ppm per Hz shift, respectively.

Electrostatically Levitated Ring-Shaped Rotational-Gyro/Accelerometer

NASA Astrophysics Data System (ADS)

Murakoshi, Takao; Endo, Yasuo; Fukatsu, Keisuke; Nakamura, Sigeru; Esashi, Masayoshi

2003-04-01

This paper reports an electrostatically levitated inertia measurement system which is based on the principle of a rotational gyro. The device has several advantages: the levitation of the rotor in a vacuum eliminates mechanical friction resulting in high sensitivity; the position control for the levitation allows accelerations to be sensed in the tri-axis; and the fabrication of the device by a micromachining technique has the cost advantages afforded by miniaturization. Latest measurements yield a noise floor of the gyro and that of the accelerometer as low as 0.15 deg/h1/2 and 30 μG/Hz1/2, respectively. This performance is achieved by a new sensor design. To further improve of the previous device, a ring-shaped structure is designed and fabricated by deep reactive ion etching using inductively coupled plasma. The rotor levitation is performed with capacitive detection and electrostatic actuation. Multiaxis closed-loop control is realized by differential capacitance sensing and frequency multiplying. The rotation of the micro gyro is based on the principle of a planar variable capacitance motor.

Spectral response analysis of PVDF capacitive sensors

NASA Astrophysics Data System (ADS)

Reyes-Ramírez, B.; García-Segundo, C.; García-Valenzuela, A.

2013-06-01

We investigate the spectral response to ultrasound waves in water of low-noise capacitive sensors based on PVDF polymer piezoelectric films. First, we analyze theoretically the mechanical-to-electrical transduction as a function of the frequency of ultrasonic signals and derive an analytic expression of the sensor's transfer function. Then we present experimental results of the frequency response of a home-made PDVF in water to test signals from 1 to 20 MHz induced by a commercial hydrophone powered by a signal generator and compare with our theoretical model.

Active shunt capacitance cancelling oscillator circuit

DOEpatents

Wessendorf, Kurt O.

2003-09-23

An oscillator circuit is disclosed which can be used to produce oscillation using a piezoelectric crystal, with a frequency of oscillation being largely independent of any shunt capacitance associated with the crystal (i.e. due to electrodes on the surfaces of the crystal and due to packaging and wiring for the crystal). The oscillator circuit is based on a tuned gain stage which operates the crystal at a frequency, f, near a series resonance frequency, f.sub.S. The oscillator circuit further includes a compensation circuit that supplies all the ac current flow through the shunt resistance associated with the crystal so that this ac current need not be supplied by the tuned gain stage. The compensation circuit uses a current mirror to provide the ac current flow based on the current flow through a reference capacitor that is equivalent to the shunt capacitance associated with the crystal. The oscillator circuit has applications for driving piezoelectric crystals for sensing of viscous, fluid or solid media by detecting a change in the frequency of oscillation of the crystal and a resonator loss which occur from contact of an exposed surface of the crystal by the viscous, fluid or solid media.

In-Line Capacitance Sensor for Real-Time Water Absorption Measurements

NASA Technical Reports Server (NTRS)

Nurge, Mark A.; Perusich, Stephen A.

2010-01-01

A capacitance/dielectric sensor was designed, constructed, and used to measure in real time the in-situ water concentration in a desiccant water bed. Measurements were carried out with two experimental setups: (1) passing nitrogen through a humidity generator and allowing the gas stream to become saturated at a measured temperature and pressure, and (2) injecting water via a syringe pump into a nitrogen stream. Both water vapor generating devices were attached to a downstream vertically-mounted water capture bed filled with 19.5 g of Moisture Gone desiccant. The sensor consisted of two electrodes: (1) a 1/8" dia stainless steel rod placed in the middle of the bed and (2) the outer shell of the stainless steel bed concentric with the rod. All phases of the water capture process (background, heating, absorption, desorption, and cooling) were monitored with capacitance. The measured capacitance was found to vary linearly with the water content in the bed at frequencies above 100 kHz indicating dipolar motion dominated the signal; below this frequency, ionic motion caused nonlinearities in the water concentration/capacitance relationship. The desiccant exhibited a dielectric relaxation whose activation energy was lowered upon addition of water indicating either a less hindered rotational motion or crystal reorientation.

Optical control of capacitance in a metal-insulator-semiconductor diode with embedded metal nanoparticles

NASA Astrophysics Data System (ADS)

Mikhelashvili, V.; Ankonina, G.; Kauffmann, Y.; Atiya, G.; Kaplan, W. D.; Padmanabhan, R.; Eisenstein, G.

2017-06-01

This paper describes a metal-insulator-semiconductor (MIS) capacitor with flat capacitance voltage characteristics and a small quadratic voltage capacitance coefficient. The device characteristics resemble a metal-insulator-metal diode except that here the capacitance depends on illumination and exhibits a strong frequency dispersion. The device incorporates Fe nanoparticles (NPs), mixed with SrF2, which are embedded in an insulator stack of SiO2 and HfO2. Positively charged Fe ions induce dipole type traps with an electronic polarization that is enhanced by photogenerated carriers injected from the substrate and/or by inter nanoparticle exchange of carriers. The obtained characteristics are compared with those of five other MIS structures: two based on Fe NPs, one with and the other without SrF2 sublayers. Additionally, devices contain Co NPs embedded in SrF2 sublayers, and finally, two structures have no NPs, with one based on a stack of SiO2 and HfO2 and the other which also includes SrF2. Only structures containing Fe NPs, which are incorporated into SrF2, yield a voltage independent capacitance, the level of which can be changed by illumination. These properties are essential in radio frequency/analog mixed signal applications.

Terahertz Metasurfaces Optimized for Biomolecular Detection

NASA Astrophysics Data System (ADS)

Naranjo, Guillermo A.

In the last decade, there has been an increase in the use of metasurfaces to detect biological compounds at terahertz frequencies. This increased interest has been fueled by the fact that various biomolecules have rotational and vibrational modes at THz frequencies. The metasurface's resonant units can be considered as inductive-capacitive circuits therefore the detection mechanism is the change in dielectric constant in the capacitive region due to the presence of an analyte. In this project we utilized a facing split ring resonator design with three different tip geometries defining the capacitive region; square, triangular and round tips. We also utilized complementary facing split ring resonators, which present a larger capacitive region that their positive counterparts, with the same three tip geometries. In addition, we added micro wells in the capacitive region of the resonators where they serve to infiltrate the analyte into the substrate and increases their interaction with the electric field. The samples were then fabricated using photolithography, electron beam lithography and reactive ion etching to define the micro wells. They were characterized by obtaining the terahertz transmission spectra using terahertz time domain spectroscopy with and without an overlayer of Ara-h-2 or Ara-h-6. Results show that the metasurfaces can detect the presence of the allergens, and present a different response for Ara-h-2 than for Ara-h-6. The results indicate that utilizing complementary metasurfaces and/ or the addition of micro wells in the capacitive region are promising avenues to develop a sensitive terahertz metasurface based biosensor.

Identification of wheat varieties with a parallel-plate capacitance sensor using fisher linear discriminant analysis

USDA-ARS?s Scientific Manuscript database

Fisher’s linear discriminant (FLD) models for wheat variety classification were developed and validated. The inputs to the FLD models were the capacitance (C), impedance (Z), and phase angle ('), measured at two frequencies. Classification of wheat varieties was obtained as output of the FLD mod...

Phase-Discriminating Capacitive Sensor System

NASA Technical Reports Server (NTRS)

Vranish, John M.; Rahim, Wadi

1993-01-01

Crosstalk eliminated by maintaining voltages on all electrodes at same amplitude, phase, and frequency. Each output feedback-derived control voltage, change of which indicates proximity-induced change in capacitance of associated sensing electrode. Sensors placed close together, enabling imaging of sort. Images and/or output voltages used to guide robots in proximity to various objects.

Environmentally friendly power generator based on moving liquid dielectric and double layer effect.

PubMed

Huynh, D H; Nguyen, T C; Nguyen, P D; Abeyrathne, C D; Hossain, Md S; Evans, R; Skafidas, E

2016-06-03

An electrostatic power generator converts mechanical energy to electrical energy by utilising the principle of variable capacitance. This change in capacitance is usually achieved by varying the gap or overlap between two parallel metallic plates. This paper proposes a novel electrostatic micro power generator where the change in capacitance is achieved by the movement of an aqueous solution of NaCl. A significant change in capacitance is achieved due to the higher than air dielectric constant of water and the Helmholtz double layer capacitor formed by ion separation at the electrode interfaces. The proposed device has significant advantages over traditional electrostatic devices which include low bias voltage and low mechanical frequency of operation. This is critical if the proposed device is to have utility in harvesting power from the environment. A figure of merit exceeding 10000(10(8)μW)/(mm(2)HzV(2)) which is two orders of magnitude greater than previous devices, is demonstrated for a prototype operating at a bias voltage of 1.2 V and a droplet frequency of 6 Hz. Concepts are presented for large scale power harvesting.

Very high frequency spectroscopy and tuning of a single-cooper-pair transistor with an on-chip generator.

PubMed

Billangeon, P-M; Pierre, F; Bouchiat, H; Deblock, R

2007-03-23

A single-Cooper-pair transistor (SCPT) is coupled capacitively to a voltage biased Josephson junction, used as a high-frequency generator. Thanks to the high energy of photons generated by the Josephson junction, transitions between energy levels, not limited to the first two levels, were induced and the effect of this irradiation on the dc Josephson current of the SCPT was measured. The phase and gate bias dependence of energy levels of the SCPT at high energy is probed. Because the energies of photons can be higher than the superconducting gap we can induce not only transfer of Cooper pairs but also transfer of quasiparticles through the island of the SCPT, thus controlling the poisoning of the SCPT. This can both decrease and increase the average Josephson energy of the SCPT: its supercurrent is then controlled by high-frequency irradiation.

High-Precision Hysteresis Sensing of the Quartz Crystal Inductance-to-Frequency Converter

PubMed Central

Matko, Vojko; Milanović, Miro

2016-01-01

A new method for the automated measurement of the hysteresis of the temperature-compensated inductance-to-frequency converter with a single quartz crystal is proposed. The new idea behind this method is a converter with two programmable analog switches enabling the automated measurement of the converter hysteresis, as well as the temperature compensation of the quartz crystal and any other circuit element. Also used is the programmable timing control device that allows the selection of different oscillating frequencies. In the proposed programmable method two different inductances connected in series to the quartz crystal are switched in a short time sequence, compensating the crystal’s natural temperature characteristics (in the temperature range between 0 and 50 °C). The procedure allows for the measurement of the converter hysteresis at various values of capacitance connected in parallel with the quartz crystal for the converter sensitivity setting at selected inductance. It, furthermore, enables the measurement of hysteresis at various values of inductance at selected parallel capacitance (sensitivity) connected to the quartz crystal. The article shows that the proposed hysteresis measurement of the converter, which converts the inductance in the range between 95 and 100 μH to a frequency in the range between 1 and 200 kHz, has only 7 × 10−13 frequency instability (during the temperature change between 0 and 50 °C) with a maximum 1 × 10−11 hysteresis frequency difference. PMID:27367688

Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO{sub 2} thin films grown by the atomic layer deposition technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kassmi, M.; LMOP, El Manar University, Tunis 2092; Pointet, J.

2016-06-28

Dielectric spectroscopy is carried out for intrinsic and aluminum-doped TiO{sub 2} rutile films which are deposited on RuO{sub 2} by the atomic layer deposition technique. Capacitance and conductance are measured in the 0.1 Hz–100 kHz range, for ac electric fields up to 1 MV{sub rms}/cm. Intrinsic films have a much lower dielectric constant than rutile crystals. This is ascribed to the presence of oxygen vacancies which depress polarizability. When Al is substituted for Ti, the dielectric constant further decreases. By considering Al-induced modification of polarizability, a theoretical relationship between the dielectric constant and the Al concentration is proposed. Al doping drastically decreasesmore » the loss in the very low frequency part of the spectrum. However, Al doping has almost no effect on the loss at high frequencies. The effect of Al doping on loss is discussed through models of hopping transport implying intrinsic oxygen vacancies and Al related centers. When increasing the ac electric field in the MV{sub rms}/cm range, strong voltage non-linearities are evidenced in undoped films. The conductance increases exponentially with the ac field and the capacitance displays negative values (inductive behavior). Hopping barrier lowering is proposed to explain high-field effects. Finally, it is shown that Al doping strongly improves the high-field dielectric behavior.« less

Equivalent circuit simulation of cylindrical monopole impedance measurements in ionospheric electron plasma

NASA Astrophysics Data System (ADS)

Kiraga, A.

Several common problems occur in measurement techniques and interpretation of plasma natural emissions and impedance data. Antenna characteristics are of prime importance in equivalent circuit analysis. Spacecraft - plasma interaction contributes to variability of equivalent circuit impedances and e.m.f. components and imposes constrains on usefulness of experimental data. In order to have independent, built in estimate of local plasma frequency and to get deeper insight into properties of equivalent circuit for wave diagnostics, impedance measurement was integrated with radio receivers on the ACTIVE, APEX and CORONAS satellites. Impedance measurements of 7.5m long monopole were performed in frequency range .1-10MHz with the frequency step of 50kHz, in voltage divider configuration. Due to high inclination of 82.5deg and altitude range of 500-3000km, data from very different plasmas were collected. Data can be split into quasi normal, disturbed and very disturbed measurements. Equivalent circuit structure evolved in attempt to m tcha even very disturbed measurements. For quasi normal measurements, satisfactory matching is obtained with computed gyrofrequency fc and fitted plasma frequency fn, stray capacitance Cs and capacitance Cv of phenomenological vacuum sheath. With Balmain formula for monopole impedance in cold magnetoplasma, two basic spectral structures are explained. For sufficiently magnetized plasma (roughly fn/fc<2 if Cs=20pF), circuit parallel resonance frequency Fr falls into upper hybrid band (max(fn,fc),fu), resonance amplitude is reduced by high antenna resistance and horn like absolute maximum points fu. For values of fn/fc ratio, greater then critical, Fr is less than fn and broad absolute maximum at Fr follows from low antenna resistance. Further increase of fn/fc results in increasing lag of Fr behind fn. Critical rati o fn/fc increases with decreasing stray capacitance Cs. It follows from data analysis that stray capacitance may change in flight, at least due to attitude changes, so mentioned basic structures may be relevant in stray compensated bridge configuration. It is found that strongly disturbed measurements are related to activation of fast diodes, designed for input protection. Injections of charged particle beams saturated instrument. On line telemetry transmission interfered directly by receipted VHF fields and indirectly by particle acceleration leading to differential charging and direct current flow. In dense equatorial plasma, very peculiar evolution of base voltage spectra is linked to differential charging and intense direct current flow of thermal electrons. Deep, quasi periodic modulations or irregular excursions on time scales much shorter than sweep period are indicative of differential charging by ambient, energetic minor populations. Presented data and simulations address challenges in instrument design, monitoring and onboard data processing.

Transport and charging mechanisms in Ta2O5 thin films for capacitive RF MEMS switches application

NASA Astrophysics Data System (ADS)

Persano, A.; Quaranta, F.; Martucci, M. C.; Cretı, P.; Siciliano, P.; Cola, A.

2010-06-01

The potential of sputtered Ta2O5 thin films to be used as dielectric layers in capacitive radio frequency microelectromechanical system switches is evaluated by investigating two factors of crucial importance for the performance of these devices which are the transport mechanisms and the charging effects in the dielectric layer. We find that Ta2O5 films show good electrical and dielectrical properties for the considered application in terms of a low leakage current density of 4 nA/cm2 for E =1 MV/cm, a high breakdown field of 4 MV/cm and a high dielectric constant of 32. For electric fields lower than 1 MV/cm the conduction mechanism is found to be variable-range hopping in the temperature range 300-400 K, while nearest-neighbor hopping is observed at higher temperatures. For fields in the range 1-4 MV/cm Poole-Frenkel becomes the dominant conduction mechanism. Current and capacitance transients used to investigate the charging effects show a decay which is well described by the stretched-exponential law, thus providing further insights on capture and emission processes.

Ferroelectric, dielectric and electrical behavior of two-dimensional lead sulphide nanosheets

NASA Astrophysics Data System (ADS)

Afsar, M. F.; Jamil, Arifa; Rafiq, M. A.

2017-12-01

Two-dimensional pure cubic phase lead sulphide (PbS) nanosheets were synthesized using solid state reaction method at ambient pressure and low temperature ~190 °C. From 210 K-300 K, small polaron hopping conduction mechanism was found to be dominant in PbS nanosheets at frequencies 20 Hz-2 MHz. High values of dielectric constant (~200) and electrical conductivity (of the order of 10-3 S m-1 at 300 K) of PbS nanosheets were extracted suggesting that it is a proficient material for capacitive storage devices. A high value of density of states of the order of 1032 eV-1 cm-3 was obtained for PbS nanosheets. The capacitance-voltage (CV) measurements of PbS nanosheets resulted in a stable butterfly loop due to switching of ferroelectric polarization at 300 K. The permittivity calculated at 0 V capacitance was ~150 and the dielectric loss remained below ~0.50. The polarization-voltage (QV) measurements showed a remnant polarization 23 µC cm-2 in PbS nanosheets. The leakage current density was below 0.5 mA cm-2 in the range  ±5 V.

Neural Network Compensation for Frequency Cross-Talk in Laser Interferometry

NASA Astrophysics Data System (ADS)

Lee, Wooram; Heo, Gunhaeng; You, Kwanho

The heterodyne laser interferometer acts as an ultra-precise measurement apparatus in semiconductor manufacture. However the periodical nonlinearity property caused from frequency cross-talk is an obstacle to improve the high measurement accuracy in nanometer scale. In order to minimize the nonlinearity error of the heterodyne interferometer, we propose a frequency cross-talk compensation algorithm using an artificial intelligence method. The feedforward neural network trained by back-propagation compensates the nonlinearity error and regulates to minimize the difference with the reference signal. With some experimental results, the improved accuracy is proved through comparison with the position value from a capacitive displacement sensor.

A capacitive power sensor based on the MEMS cantilever beam fabricated by GaAs MMIC technology

NASA Astrophysics Data System (ADS)

Yi, Zhenxiang; Liao, Xiaoping

2013-03-01

In this paper, a novel capacitive power sensor based on the microelectromechanical systems (MEMS) cantilever beam at 8-12 GHz is proposed, fabricated and tested. The presented design can not only realize a cantilever beam instead of the conventional fixed-fixed beam, but also provide fine compatibility with the GaAs monolithic microwave integrated circuit (MMIC) process. When the displacement of the cantilever beam is very small compared with the initial height of the air gap, the capacitance change between the measuring electrode and the cantilever beam has an approximately linear dependence on the incident radio frequency (RF) power. Impedance compensating technology, by modifying the slot width of the coplanar waveguide transmission line, is adopted to minimize the effect of the cantilever beam on the power sensor; its validity is verified by the simulation of high frequency structure simulator software. The power sensor has been fabricated successfully by Au surface micromachining using polyimide as the sacrificial layer on the GaAs substrate. Optimization of the design with impedance compensating technology has resulted in a measured return loss of less than -25 dB and an insertion loss of around 0.1 dB at 8-12 GHz, which shows the slight effect of the cantilever beam on the microwave performance of this power sensor. The measured capacitance change starts from 0.7 fF to 1.3 fF when the incident RF power increases from 100 to 200 mW and an approximate linear dependence has been obtained. The measured sensitivities of the sensor are about 6.16, 6.27 and 6.03 aF mW-1 at 8, 10 and 12 GHz, respectively.

A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature

NASA Astrophysics Data System (ADS)

Yadav, Dharmendra Singh; Raad, Bhagwan Ram; Sharma, Dheeraj

2016-12-01

In this paper, we focus on the improvement of figures of merit for charge plasma based tunnel field-effect transistor (TFET) in terms of ON-state current, threshold voltage, sub-threshold swing, ambipolar nature, and gate to drain capacitance which provides better channel controlling of the device with improved high frequency response at ultra-low supply voltages. Regarding this, we simultaneously employ work function engineering on the drain and gate electrode of the charge plasma TFET. The use of gate work function engineering modulates the barrier on the source/channel interface leads to improvement in the ON-state current, threshold voltage, and sub-threshold swing. Apart from this, for the first time use of work function engineering on the drain electrode increases the tunneling barrier for the flow of holes on the drain/channel interface, it results into suppression of ambipolar behavior. The lowering of gate to drain capacitance therefore enhanced high frequency parameters. Whereas, the presence of dual work functionality at the gate electrode and over the drain region improves the overall performance of the charge plasma based TFET.

Non-contact thermoacoustic detection of embedded targets using airborne-capacitive micromachined ultrasonic transducers

NASA Astrophysics Data System (ADS)

Nan, Hao; Boyle, Kevin C.; Apte, Nikhil; Aliroteh, Miaad S.; Bhuyan, Anshuman; Nikoozadeh, Amin; Khuri-Yakub, Butrus T.; Arbabian, Amin

2015-02-01

A radio frequency (RF)/ultrasound hybrid imaging system using airborne capacitive micromachined ultrasonic transducers (CMUTs) is proposed for the remote detection of embedded objects in highly dispersive media (e.g., water, soil, and tissue). RF excitation provides permittivity contrast, and ultra-sensitive airborne-ultrasound detection measures thermoacoustic-generated acoustic waves that initiate at the boundaries of the embedded target, go through the medium-air interface, and finally reach the transducer. Vented wideband CMUTs interface to 0.18 μm CMOS low-noise amplifiers to provide displacement detection sensitivity of 1.3 pm at the transducer surface. The carefully designed vented CMUT structure provides a fractional bandwidth of 3.5% utilizing the squeeze-film damping of the air in the cavity.

Plasma current ramp-up by lower hybrid wave using innovative antennas on TST-2

NASA Astrophysics Data System (ADS)

Takase, Yuichi; Ejiri, Akira; Moeller, Charles; Roidl, Benedikt; Shinya, Takahiro; Tsujii, Naoto; Yajima, Satoru; Yamazaki, Hibiki; Kitayama, Akichika; Matsumoto, Naoki; Sato, Akito; Sonehara, Masateru; Takahashi, Wataru; Tajiri, Yoshiyuki; Takei, Yuki; Togashi, Hiro; Toida, Kazuya; Yoshida, Yusuke

2016-10-01

Non-inductive plasma current (Ip) ramp-up by RF power in the lower hybrid frequency range is being studied on the TST-2 spherical tokamak (R = 0.36 m, a = 0.23 m, Bt = 0.3 T, Ip = 0.1 MA). Up to 400 kW of RF power is available at a frequency of 200 MHz. An innovative antenna called the capacitively-coupled combline (CCC) antenna was developed to excite a sharp, highly directional traveling wave with the electric field polarized in the toroidal direction. It is an array of resonant circuit elements made of capacitance and inductance, coupled to neighboring elements by mutual capacitance. Two CCC antennas are installed in TST-2, a 13-element outboard-launch antenna and a 6-element top-launch antenna. The latter was installed in March 2016 to improve accessibility to the core and to achieve single-pass damping. The suspected wave power loss in the scrape-off layer plasma should also be avoided. Ip ramp-up to 25 kA has been achieved so far. An upgrade of the Bt power supply is planned to take advantage of the observed improvement of Ip ramp-up with Bt. Higher Bt for longer pulses should improve the Ip ramp-up efficiency by improving wave accessibility and by reducing prompt orbit losses of energetic electrons.

Single particle dynamics in a radio-frequency produced plasma sheath

NASA Astrophysics Data System (ADS)

Rubin-Zuzic, M.; Nosenko, V.; Zhdanov, S.; Ivlev, A.; Thomas, H.; Khrapak, S.; Couedel, L.

2018-01-01

Recently different research groups have investigated the motion of a single dust particle levitated in a rf plasma. Here we describe a highly resolved experiment where a single spherical melamine formaldehyde microparticle is suspended in the plasma sheath above the lower electrode of a capacitively coupled radio-frequency discharge at controlled pressure, power and neutral gas flow rate. The particle's horizontal oscillation is investigated, from which its neutral gas damping rate, kinetic temperature and eigenfrequency of the potential trap are measured. Compared to prior experiments we report about inhomogeneous and anisotropic velocity variations.

Self isolating high frequency saturable reactor

DOEpatents

Moore, James A.

1998-06-23

The present invention discloses a saturable reactor and a method for decoupling the interwinding capacitance from the frequency limitations of the reactor so that the equivalent electrical circuit of the saturable reactor comprises a variable inductor. The saturable reactor comprises a plurality of physically symmetrical magnetic cores with closed loop magnetic paths and a novel method of wiring a control winding and a RF winding. The present invention additionally discloses a matching network and method for matching the impedances of a RF generator to a load. The matching network comprises a matching transformer and a saturable reactor.

a Study of a High Frequency Miniature Reservoir-Less Pulse Tube

NASA Astrophysics Data System (ADS)

Garaway, I.; Grossman, G.

2008-03-01

A miniature high frequency reservoir-less pulse tube cryocooler has been designed and tested in our laboratory. The cryocooler having a regenerator length of 12.0 mm and an overall volume of 2.3cc (excluding the compressor) reached a low temperature of 146K and provided 100mW of cooling at 160K. This experimental study shows that it is possible to miniaturize a pulse tube cryocooler to very short regenerator lengths by implementing a few basic principles: Most importantly, high operating frequencies at small tidal displacements, a regenerator matrix with small hydraulic diameters, and increased helium fill pressures. This study also shows that as the operating frequency of a miniature cryocooler increases, the reservoir becomes less necessary as a phase shifting device. At higher frequencies and appropriate inertance tube geometries, the impedance and capacitance of the inertance tube itself takes over the phase shifting task. An outline of the design and modeling principles is presented along with some details of the experimental apparatus and testing procedures.

Hybrid Modeling of SiH4/Ar Discharge in a Pulse Modulated RF Capacitively Coupled Plasma

NASA Astrophysics Data System (ADS)

Xi-Feng, Wang; Yuan-Hong, Song; You-Nian, Wang; PSEG Team

2015-09-01

Pulsed plasmas have offered important advantages in future micro-devices, especially for electronegative gas plasmas. In this work, a one-dimensional fluid and Monte-Carlo (MC) hybrid model is developed to simulate SiH4/Ar discharge in a pulse modulated radio-frequency (RF) capacitively coupled plasma (CCP). Time evolution densities of different species, such as electrons, ions, radicals, are calculated, as well as the electron energy probability function (EEPF) which is obtained by a MC simulation. By pulsing the RF source, the electron energy distributions and plasma properties can be modulated by pulse frequency and duty cycle. High electron energy tails are obtained during power-on period, with the SiHx densities increasing rapidly mainly by SiH4 dissociation. As the RF power is off, the densities in the bulk region decrease rapidly owing to high energy electrons disappear, but increase near electrodes since diffusion without the confinement of high electric field, which can prolong the time of radials deposition on the plate. Especially, in the afterglow, the increase of negative ions near the electrodes results from cool electron attachment, which are good for film deposition. This work was supported by the National Natural Science Foundation of China (Grant No. 11275038).

Water-Tree Modelling and Detection for Underground Cables

NASA Astrophysics Data System (ADS)

Chen, Qi

In recent years, aging infrastructure has become a major concern for the power industry. Since its inception in early 20th century, the electrical system has been the cornerstone of an industrial society. Stable and uninterrupted delivery of electrical power is now a base necessity for the modern world. As the times march-on, however, the electrical infrastructure ages and there is the inevitable need to renew and replace the existing system. Unfortunately, due to time and financial constraints, many electrical systems today are forced to operate beyond their original design and power utilities must find ways to prolong the lifespan of older equipment. Thus, the concept of preventative maintenance arises. Preventative maintenance allows old equipment to operate longer and at better efficiency, but in order to implement preventative maintenance, the operators must know minute details of the electrical system, especially some of the harder to assess issues such water-tree. Water-tree induced insulation degradation is a problem typically associated with older cable systems. It is a very high impedance phenomenon and it is difficult to detect using traditional methods such as Tan-Delta or Partial Discharge. The proposed dissertation studies water-tree development in underground cables, potential methods to detect water-tree location and water-tree severity estimation. The dissertation begins by developing mathematical models of water-tree using finite element analysis. The method focuses on surface-originated vented tree, the most prominent type of water-tree fault in the field. Using the standard operation parameters of North American electrical systems, the water-tree boundary conditions are defined. By applying finite element analysis technique, the complex water-tree structure is broken down to homogeneous components. The result is a generalized representation of water-tree capacitance at different stages of development. The result from the finite element analysis is used to model water-tree in large system. Both empirical measurements and the mathematical model show that the impedance of early-stage water-tree is extremely large. As the result, traditional detection methods such Tan-Delta or Partial Discharge are not effective due to the excessively high accuracy requirement. A high-frequency pulse detection method is developed instead. The water-tree impedance is capacitive in nature and it can be reduced to manageable level by high-frequency inputs. The method is able to determine the location of early-stage water-tree in long-distance cables using economically feasible equipment. A pattern recognition method is developed to estimate the severity of water-tree using its pulse response from the high-frequency test method. The early-warning system for water-tree appearance is a tool developed to assist the practical implementation of the high-frequency pulse detection method. Although the equipment used by the detection method is economically feasible, it is still a specialized test and not designed for constant monitoring of the system. The test also place heavy stress on the cable and it is most effective when the cable is taken offline. As the result, utilities need a method to estimate the likelihood of water-tree presence before subjecting the cable to the specialized test. The early-warning system takes advantage of naturally occurring high-frequency events in the system and uses a deviation-comparison method to estimate the probability of water-tree presence on the cable. If the likelihood is high, then the utility can use the high-frequency pulse detection method to obtain accurate results. Specific pulse response patterns can be used to calculate the capacitance of water-tree. The calculated result, however, is subjected to margins of error due to limitations from the real system. There are both long-term and short-term methods to improve the accuracy. Computation algorithm improvement allows immediate improvement on accuracy of the capacitance estimation. The probability distribution of the calculation solution showed that improvements in waveform time-step measurement allow fundamental improves to the overall result.

A transient simulation approach to obtaining capacitance-voltage characteristics of GaN MOS capacitors with deep-level traps

NASA Astrophysics Data System (ADS)

Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Shimizu, Mitsuaki; Hashizume, Tamotsu

2018-04-01

In this study, GaN MOS capacitance-voltage device simulations considering various interface and bulk traps are performed in the transient mode. The simulations explain various features of capacitance-voltage curves, such as plateau, hysteresis, and frequency dispersions, which are commonly observed in measurements of GaN MOS capacitors and arise from complicated combinations of interface and bulk deep-level traps. The objective of the present study is to provide a good theoretical tool to understand the physics of various nonideal measured curves.

Effect of static axial loads on the lateral vibration attenuation of a beam with piezo-elastic supports

NASA Astrophysics Data System (ADS)

Götz, Benedict; Platz, Roland; Melz, Tobias

2018-03-01

In this paper, vibration attenuation of a beam with circular cross-section by resonantly shunted piezo-elastic supports is experimentally investigated for varying axial tensile and compressive beam loads. The beam's first mode resonance frequency, the general electromechanical coupling coefficient and static transducer capacitance are analyzed for varying axial loads. All three parameter values are obtained from transducer impedance measurements on an experimental test setup. Varying axial beam loads manipulate the beam's lateral bending stiffness and, thus, lead to a detuning of the resonance frequencies. Furthermore, they affect the general electromechanical coupling coefficient of transducer and beam, an important modal quantity for shunt-damping, whereas the static transducer capacitance is nearly unaffected. Frequency transfer functions of the beam with one piezoe-elastic support either shunted to an RL-shunt or to an RL-shunt with negative capacitance, the RLC-shunt, are compared for varying axial loads. It is shown that the beam vibration attenuation with the RLC-shunt is less influenced by varying axial beam loads and, therefore, is more robust against detuning.

Analog and RF performance of a multigate FinFET at nano scale

NASA Astrophysics Data System (ADS)

Kumar, Abhishek

2016-12-01

In this paper, analog and RF performance of the Fin field effect transistor (FET) at Nano scale is observed through 3D simulation. FinFET devices like rectangular gate all around (RE-GAA) FinFET, cylindrical gate all around (CY-GAA) FinFET and triple gate (TG) FinFET are observed. The figure of merit (FOMs) such as input-output characteristics, trans-conductance (gm), output-conductance (gd), intrinsic gain (gm/gd), gate capacitance (gate to source and total gate capacitance), unity gain cut-off frequency (ft), trans-conductance generation factor (TGF), gain frequency product (GFP), gain bandwidth product (GBP) and gain transconductance frequency product (GTFP) are observed. The analog performance of a FinFETs are observed by realising source follower circuit with NMOS transistor as a current source. The source follower circuit gain is observed. It has been observed that maximum capacitance is observed in case gate all around condition. Rectangular gate all around has the highest transconductance. In the source follower circuit, the gain curve (Vout/Vin) is sharper for TG-FinFET.

Experimental investigation of mode transitions in asymmetric capacitively coupled radio-frequency Ne and CF4 plasmas

NASA Astrophysics Data System (ADS)

Liu, Gang-Hu; Liu, Yong-Xin; Bai, Li-Shui; Zhao, Kai; Wang, You-Nian

2018-02-01

The dependence of the electron density and the emission intensity on external parameters during the transitions of the electron power absorption mode is experimentally studied in asymmetric electropositive (neon) and electronegative (CF4) capacitively coupled radio-frequency plasmas. The spatio-temporal distribution of the emission intensity is measured with phase resolved optical emission spectroscopy and the electron density at the discharge center is measured by utilizing a floating hairpin probe. In neon discharge, the emission intensity increases almost linearly with the rf voltage at all driving frequencies covered here, while the variation of the electron density with the rf voltage behaves differently at different driving frequencies. In particular, the electron density increases linearly with the rf voltage at high driving frequencies, while at low driving frequencies the electron density increases slowly at the low-voltage side and, however, grows rapidly, when the rf voltage is higher than a certain value, indicating a transition from α to γ mode. The rf voltage, at which the mode transition occurs, increases with the decrease of the driving frequency/the working pressure. By contrast, in CF4 discharge, three different electron power absorption modes can be observed and the electron density and emission intensity do not exhibit a simple dependence on the rf voltage. In particular, the electron density exhibits a minimum at a certain rf voltage when the electron power absorption mode is switching from drift-ambipolar to the α/γ mode. A minimum can also be found in the emission intensity at a higher rf voltage when a discharge is switching into the γ mode.

Design and Test of a Soil Profile Moisture Sensor Based on Sensitive Soil Layers

PubMed Central

Liu, Cheng; Qian, Hongzhou; Cao, Weixing; Ni, Jun

2018-01-01

To meet the demand of intelligent irrigation for accurate moisture sensing in the soil vertical profile, a soil profile moisture sensor was designed based on the principle of high-frequency capacitance. The sensor consists of five groups of sensing probes, a data processor, and some accessory components. Low-resistivity copper rings were used as components of the sensing probes. Composable simulation of the sensor’s sensing probes was carried out using a high-frequency structure simulator. According to the effective radiation range of electric field intensity, width and spacing of copper ring were set to 30 mm and 40 mm, respectively. A parallel resonance circuit of voltage-controlled oscillator and high-frequency inductance-capacitance (LC) was designed for signal frequency division and conditioning. A data processor was used to process moisture-related frequency signals for soil profile moisture sensing. The sensor was able to detect real-time soil moisture at the depths of 20, 30, and 50 cm and conduct online inversion of moisture in the soil layer between 0–100 cm. According to the calibration results, the degree of fitting (R2) between the sensor’s measuring frequency and the volumetric moisture content of soil sample was 0.99 and the relative error of the sensor consistency test was 0–1.17%. Field tests in different loam soils showed that measured soil moisture from our sensor reproduced the observed soil moisture dynamic well, with an R2 of 0.96 and a root mean square error of 0.04. In a sensor accuracy test, the R2 between the measured value of the proposed sensor and that of the Diviner2000 portable soil moisture monitoring system was higher than 0.85, with a relative error smaller than 5%. The R2 between measured values and inversed soil moisture values for other soil layers were consistently higher than 0.8. According to calibration test and field test, this sensor, which features low cost, good operability, and high integration, is qualified for precise agricultural irrigation with stable performance and high accuracy. PMID:29883420

Design and Test of a Soil Profile Moisture Sensor Based on Sensitive Soil Layers.

PubMed

Gao, Zhenran; Zhu, Yan; Liu, Cheng; Qian, Hongzhou; Cao, Weixing; Ni, Jun

2018-05-21

To meet the demand of intelligent irrigation for accurate moisture sensing in the soil vertical profile, a soil profile moisture sensor was designed based on the principle of high-frequency capacitance. The sensor consists of five groups of sensing probes, a data processor, and some accessory components. Low-resistivity copper rings were used as components of the sensing probes. Composable simulation of the sensor’s sensing probes was carried out using a high-frequency structure simulator. According to the effective radiation range of electric field intensity, width and spacing of copper ring were set to 30 mm and 40 mm, respectively. A parallel resonance circuit of voltage-controlled oscillator and high-frequency inductance-capacitance (LC) was designed for signal frequency division and conditioning. A data processor was used to process moisture-related frequency signals for soil profile moisture sensing. The sensor was able to detect real-time soil moisture at the depths of 20, 30, and 50 cm and conduct online inversion of moisture in the soil layer between 0⁻100 cm. According to the calibration results, the degree of fitting ( R ²) between the sensor’s measuring frequency and the volumetric moisture content of soil sample was 0.99 and the relative error of the sensor consistency test was 0⁻1.17%. Field tests in different loam soils showed that measured soil moisture from our sensor reproduced the observed soil moisture dynamic well, with an R ² of 0.96 and a root mean square error of 0.04. In a sensor accuracy test, the R ² between the measured value of the proposed sensor and that of the Diviner2000 portable soil moisture monitoring system was higher than 0.85, with a relative error smaller than 5%. The R ² between measured values and inversed soil moisture values for other soil layers were consistently higher than 0.8. According to calibration test and field test, this sensor, which features low cost, good operability, and high integration, is qualified for precise agricultural irrigation with stable performance and high accuracy.

Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance

NASA Astrophysics Data System (ADS)

Pham, T. T.; Maréchal, A.; Muret, P.; Eon, D.; Gheeraert, E.; Rouger, N.; Pernot, J.

2018-04-01

Metal oxide semiconductor capacitors were fabricated using p - type oxygen-terminated (001) diamond and Al2O3 deposited by atomic layer deposition at two different temperatures 250 °C and 380 °C. Current voltage I(V), capacitance voltage C(V), and capacitance frequency C(f) measurements were performed and analyzed for frequencies ranging from 1 Hz to 1 MHz and temperatures from 160 K to 360 K. A complete model for the Metal-Oxide-Semiconductor Capacitors electrostatics, leakage current mechanisms through the oxide into the semiconductor and small a.c. signal equivalent circuit of the device is proposed and discussed. Interface states densities are then evaluated in the range of 1012eV-1cm-2 . The strong Fermi level pinning is demonstrated to be induced by the combined effects of the leakage current through the oxide and the presence of diamond/oxide interface states.

High resolution space quartz-flexure accelerometer based on capacitive sensing and electrostatic control technology.

PubMed

Tian, W; Wu, S C; Zhou, Z B; Qu, S B; Bai, Y Z; Luo, J

2012-09-01

High precision accelerometer plays an important role in space scientific and technical applications. A quartz-flexure accelerometer operating in low frequency range, having a resolution of better than 1 ng/Hz(1/2), has been designed based on advanced capacitive sensing and electrostatic control technologies. A high precision capacitance displacement transducer with a resolution of better than 2 × 10(-6) pF/Hz(1/2) above 0.1 Hz, is used to measure the motion of the proof mass, and the mechanical stiffness of the spring oscillator is compensated by adjusting the voltage between the proof mass and the electrodes to induce a proper negative electrostatic stiffness, which increases the mechanical sensitivity and also suppresses the position measurement noise down to 3 × 10(-10) g/Hz(1/2) at 0.1 Hz. A high resolution analog-to-digital converter is used to directly readout the feedback voltage applied on the electrodes in order to suppress the action noise to 4 × 10(-10) g/Hz(1/2) at 0.1 Hz. A prototype of the quartz-flexure accelerometer has been developed and tested, and the preliminary experimental result shows that its resolution comes to about 8 ng/Hz(1/2) at 0.1 Hz, which is mainly limited by its mechanical thermal noise due to low quality factor.

A droplet-based passive force sensor for remote tactile sensing applications

NASA Astrophysics Data System (ADS)

Nie, Baoqing; Yao, Ting; Zhang, Yiqiu; Liu, Jian; Chen, Xinjian

2018-01-01

A droplet-based flexible wireless force sensor has been developed for remote tactile-sensing applications. By integration of a droplet-based capacitive sensing unit and two circular planar coils, this inductor-capacitor (LC) passive sensor offers a platform for the mechanical force detection in a wireless transmitting mode. Under external loads, the membrane surface of the sensor deforms the underlying elastic droplet uniformly, introducing a capacitance response in tens of picofarads. The LC circuit transduces the applied force into corresponding variations of its resonance frequency, which is detected by an external electromagnetic coupling coil. Specifically, the liquid droplet features a mechanosensitive plasticity, which results in an increased device sensitivity as high as 2.72 MHz N-1. The high dielectric property of the droplet endows our sensor with high tolerance for noise and large capacitance values (20-40 pF), the highest value in the literature for the LC passive devices in comparable dimensions. It achieves excellent reproducibility under periodical loads ranging from 0 to 1.56 N and temperature fluctuations ranging from 10 °C to 55 °C. As an interesting conceptual demonstration, the flexible device has been configured into a fingertip-amounted setting in a highly compact package (of 11 mm × 11 mm × 0.25 mm) for remote contact force sensing in the table tennis game.

A flexible super-capacitive solid-state power supply for miniature implantable medical devices.

PubMed

Meng, Chuizhou; Gall, Oren Z; Irazoqui, Pedro P

2013-12-01

We present a high-energy local power supply based on a flexible and solid-state supercapacitor for miniature wireless implantable medical devices. Wireless radio-frequency (RF) powering recharges the supercapacitor through an antenna with an RF rectifier. A power management circuit for the super-capacitive system includes a boost converter to increase the breakdown voltage required for powering device circuits, and a parallel conventional capacitor as an intermediate power source to deliver current spikes during high current transients (e.g., wireless data transmission). The supercapacitor has an extremely high area capacitance of ~1.3 mF/mm(2), and is in the novel form of a 100 μm-thick thin film with the merit of mechanical flexibility and a tailorable size down to 1 mm(2) to meet various clinical dimension requirements. We experimentally demonstrate that after fully recharging the capacitor with an external RF powering source, the supercapacitor-based local power supply runs a full system for electromyogram (EMG) recording that consumes ~670 μW with wireless-data-transmission functionality for a period of ~1 s in the absence of additional RF powering. Since the quality of wireless powering for implantable devices is sensitive to the position of those devices within the RF electromagnetic field, this high-energy local power supply plays a crucial role in providing continuous and reliable power for medical device operations.

Extraction of carrier mobility and interface trap density in InGaAs metal oxide semiconductor structures using gated Hall method

NASA Astrophysics Data System (ADS)

Chidambaram, Thenappan

III-V semiconductors are potential candidates to replace Si as a channel material in next generation CMOS integrated circuits owing to their superior carrier mobilities. Low density of states (DOS) and typically high interface and border trap densities (Dit) in high mobility group III-V semiconductors provide difficulties in quantification of Dit near the conduction band edge. The trap response above the threshold voltage of a MOSFET can be very fast, and conventional Dit extraction methods, based on capacitance/conductance response (CV methods) of MOS capacitors at frequencies <1MHz, cannot distinguish conducting and trapped carriers. In addition, the CV methods have to deal with high dispersion in the accumulation region that makes it a difficult task to measure the true oxide capacitance, Cox value. Another implication of these properties of III-V interfaces is an ambiguity of determination of electron density in the MOSFET channel. Traditional evaluation of carrier density by integration of the C-V curve, gives incorrect values for D it and mobility. Here we employ gated Hall method to quantify the D it spectrum at the high-K oxide/III-V semiconductor interface for buried and surface channel devices using Hall measurement and capacitance-voltage data. Determination of electron density directly from Hall measurements allows for obtaining true mobility values.

Electrical transport and capacitance characteristics of metal-insulator-metal structures using hexagonal and cubic boron nitride films as dielectrics

NASA Astrophysics Data System (ADS)

Teii, Kungen; Kawamoto, Shinsuke; Fukui, Shingo; Matsumoto, Seiichiro

2018-04-01

Metal-insulator-metal capacitor structures using thick hexagonal and cubic boron nitride (hBN and cBN) films as dielectrics are produced by plasma jet-enhanced chemical vapor deposition, and their electrical transport and capacitance characteristics are studied in a temperature range of 298 to 473 K. The resistivity of the cBN film is of the order of 107 Ω cm at 298 K, which is lower than that of the hBN film by two orders of magnitude, while it becomes the same order as the hBN film above ˜423 K. The dominant current transport mechanism at high fields (≥1 × 104 V cm-1) is described by the Frenkel-Poole emission and thermionic emission models for the hBN and cBN films, respectively. The capacitance of the hBN film remains stable for a change in alternating-current frequency and temperature, while that of the cBN film has variations of at most 18%. The dissipation factor as a measure of energy loss is satisfactorily low (≤5%) for both films. The origin of leakage current and capacitance variation is attributed to a high defect density in the film and a transition interlayer between the substrate and the film, respectively. This suggests that cBN films with higher crystallinity, stoichiometry, and phase purity are potentially applicable for dielectrics like hBN films.

Phase discriminating capacitive array sensor system

NASA Technical Reports Server (NTRS)

Vranish, John M. (Inventor); Rahim, Wadi (Inventor)

1993-01-01

A phase discriminating capacitive sensor array system which provides multiple sensor elements which are maintained at a phase and amplitude based on a frequency reference provided by a single frequency stabilized oscillator. Sensor signals provided by the multiple sensor elements are controlled by multiple phase control units, which correspond to the multiple sensor elements, to adjust the sensor signals from the multiple sensor elements based on the frequency reference. The adjustment made to the sensor signals is indicated by output signals which indicate the proximity of the object. The output signals may also indicate the closing speed of the object based on the rate of change of the adjustment made, and the edges of the object based on a sudden decrease in the adjustment made.

Effect of driving voltages in dual capacitively coupled radio frequency plasma: A study by nonlinear global model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bora, B., E-mail: bbora@cchen.cl

2015-10-15

On the basis of nonlinear global model, a dual frequency capacitively coupled radio frequency plasma driven by 13.56 MHz and 27.12 MHz has been studied to investigate the influences of driving voltages on the generation of dc self-bias and plasma heating. Fluid equations for the ions inside the plasma sheath have been considered to determine the voltage-charge relations of the plasma sheath. Geometrically symmetric as well as asymmetric cases with finite geometrical asymmetry of 1.2 (ratio of electrodes area) have been considered to make the study more reasonable to experiment. The electrical asymmetry effect (EAE) and finite geometrical asymmetry is found tomore » work differently in controlling the dc self-bias. The amount of EAE has been primarily controlled by the phase angle between the two consecutive harmonics waveforms. The incorporation of the finite geometrical asymmetry in the calculations shift the dc self-bias towards negative polarity direction while increasing the amount of EAE is found to increase the dc self-bias in either direction. For phase angle between the two waveforms ϕ = 0 and ϕ = π/2, the amount of EAE increases significantly with increasing the low frequency voltage, whereas no such increase in the amount of EAE is found with increasing high frequency voltage. In contrast to the geometrically symmetric case, where the variation of the dc self-bias with driving voltages for phase angle ϕ = 0 and π/2 are just opposite in polarity, the variation for the geometrically asymmetric case is different for ϕ = 0 and π/2. In asymmetric case, for ϕ = 0, the dc self-bias increases towards the negative direction with increasing both the low and high frequency voltages, but for the ϕ = π/2, the dc-self bias is increased towards positive direction with increasing low frequency voltage while dc self-bias increases towards negative direction with increasing high frequency voltage.« less

Investigation of structural and electrical properties on substrate material for high frequency metal-oxide-semiconductor (MOS) devices

NASA Astrophysics Data System (ADS)

Kumar, M.; Yang, Sung-Hyun; Janardhan Reddy, K.; JagadeeshChandra, S. V.

2017-04-01

Hafnium oxide (HfO2) thin films were grown on cleaned P-type <1 0 0> Ge and Si substrates by using atomic layer deposition technique (ALD) with thickness of 8 nm. The composition analysis of as-deposited and annealed HfO2 films was characterized by XPS, further electrical measurements; we fabricated the metal-oxide-semiconductor (MOS) devices with Pt electrode. Post deposition annealing in O2 ambient at 500 °C for 30 min was carried out on both Ge and Si devices. Capacitance-voltage (C-V) and conductance-voltage (G-V) curves measured at 1 MHz. The Ge MOS devices showed improved interfacial and electrical properties, high dielectric constant (~19), smaller EOT value (0.7 nm), and smaller D it value as Si MOS devices. The C-V curves shown significantly high accumulation capacitance values from Ge devices, relatively when compare with the Si MOS devices before and after annealing. It could be due to the presence of very thin interfacial layer at HfO2/Ge stacks than HfO2/Si stacks conformed by the HRTEM images. Besides, from current-voltage (I-V) curves of the Ge devices exhibited similar leakage current as Si devices. Therefore, Ge might be a reliable substrate material for structural, electrical and high frequency applications.

Broadband EIT borehole measurements with high phase accuracy using numerical corrections of electromagnetic coupling effects

NASA Astrophysics Data System (ADS)

Zhao, Y.; Zimmermann, E.; Huisman, J. A.; Treichel, A.; Wolters, B.; van Waasen, S.; Kemna, A.

2013-08-01

Electrical impedance tomography (EIT) is gaining importance in the field of geophysics and there is increasing interest for accurate borehole EIT measurements in a broad frequency range (mHz to kHz) in order to study subsurface properties. To characterize weakly polarizable soils and sediments with EIT, high phase accuracy is required. Typically, long electrode cables are used for borehole measurements. However, this may lead to undesired electromagnetic coupling effects associated with the inductive coupling between the double wire pairs for current injection and potential measurement and the capacitive coupling between the electrically conductive shield of the cable and the electrically conductive environment surrounding the electrode cables. Depending on the electrical properties of the subsurface and the measured transfer impedances, both coupling effects can cause large phase errors that have typically limited the frequency bandwidth of field EIT measurements to the mHz to Hz range. The aim of this paper is to develop numerical corrections for these phase errors. To this end, the inductive coupling effect was modeled using electronic circuit models, and the capacitive coupling effect was modeled by integrating discrete capacitances in the electrical forward model describing the EIT measurement process. The correction methods were successfully verified with measurements under controlled conditions in a water-filled rain barrel, where a high phase accuracy of 0.8 mrad in the frequency range up to 10 kHz was achieved. The corrections were also applied to field EIT measurements made using a 25 m long EIT borehole chain with eight electrodes and an electrode separation of 1 m. The results of a 1D inversion of these measurements showed that the correction methods increased the measurement accuracy considerably. It was concluded that the proposed correction methods enlarge the bandwidth of the field EIT measurement system, and that accurate EIT measurements can now be made in the mHz to kHz frequency range. This increased accuracy in the kHz range will allow a more accurate field characterization of the complex electrical conductivity of soils and sediments, which may lead to the improved estimation of saturated hydraulic conductivity from electrical properties. Although the correction methods have been developed for a custom-made EIT system, they also have potential to improve the phase accuracy of EIT measurements made with commercial systems relying on multicore cables.

Analysis of shielded CPW discontinuities with air-bridges

NASA Technical Reports Server (NTRS)

Dib, N. I.; Katehi, P. B.; Ponchak, George E.

1992-01-01

The effect of air-bridges on the performance of various coplanar waveguides (CPW) discontinuities is studied. Specifically, the coupled open-end CPW's and the short-end shunt CPW stub discontinuities are considered. The high frequency effect of the air-bridge is evaluated using a hybrid technique. At first, the frequency dependent equivalent circuit of the planar discontinuity without the air-bridge is derived using the Space Domain Integral Equation (SDIE) method. Then, the circuit is modified by incorporating the air-bridge's parasitic inductance and capacitance which are evaluated using a simple quasi-static model. The frequency response of each discontinuity with and without the air-bridge is studied and the scattering parameters are plotted in the frequency range 30-50 GHz for typical CPW dimensions.

A precision analogue integrator system for heavy current measurement in MFDC resistance spot welding

NASA Astrophysics Data System (ADS)

Xia, Yu-Jun; Zhang, Zhong-Dian; Xia, Zhen-Xin; Zhu, Shi-Liang; Zhang, Rui

2016-02-01

In order to control and monitor the quality of middle frequency direct current (MFDC) resistance spot welding (RSW), precision measurement of the welding current up to 100 kA is required, for which Rogowski coils are the only viable current transducers at present. Thus, a highly accurate analogue integrator is the key to restoring the converted signals collected from the Rogowski coils. Previous studies emphasised that the integration drift is a major factor that influences the performance of analogue integrators, but capacitive leakage error also has a significant impact on the result, especially in long-time pulse integration. In this article, new methods of measuring and compensating capacitive leakage error are proposed to fabricate a precision analogue integrator system for MFDC RSW. A voltage holding test is carried out to measure the integration error caused by capacitive leakage, and an original integrator with a feedback adder is designed to compensate capacitive leakage error in real time. The experimental results and statistical analysis show that the new analogue integrator system could constrain both drift and capacitive leakage error, of which the effect is robust to different voltage levels of output signals. The total integration error is limited within  ±0.09 mV s-1 0.005% s-1 or full scale at a 95% confidence level, which makes it possible to achieve the precision measurement of the welding current of MFDC RSW with Rogowski coils of 0.1% accuracy class.

Effect of the Matching Circuit on the Electromechanical Characteristics of Sandwiched Piezoelectric Transducers.

PubMed

Lin, Shuyu; Xu, Jie

2017-02-10

The input electrical impedance behaves as a capacitive when a piezoelectric transducer is excited near its resonance frequency. In order to increase the energy transmission efficiency, a series or parallel inductor should be used to compensate the capacitive impedance of the piezoelectric transducer. In this paper, the effect of the series matching inductor on the electromechanical characteristics of the piezoelectric transducer is analyzed. The dependency of the resonance/anti-resonance frequency, the effective electromechanical coupling coefficient, the electrical quality factor and the electro-acoustical efficiency on the matching inductor is obtained. It is shown that apart from compensating the capacitive impedance of the piezoelectric transducer, the series matching inductor can also change the electromechanical characteristics of the piezoelectric transducer. When series matching inductor is increased, the resonance frequency is decreased and the anti-resonance unchanged; the effective electromechanical coupling coefficient is increased. For the electrical quality factor and the electroacoustic efficiency, the dependency on the matching inductor is different when the transducer is operated at the resonance and the anti-resonance frequency. The electromechanical characteristics of the piezoelectric transducer with series matching inductor are measured. It is shown that the theoretically predicted relationship between the electromechanical characteristics and the series matching inductor is in good agreement with the experimental results.

Effect of the Matching Circuit on the Electromechanical Characteristics of Sandwiched Piezoelectric Transducers

PubMed Central

Lin, Shuyu; Xu, Jie

2017-01-01

The input electrical impedance behaves as a capacitive when a piezoelectric transducer is excited near its resonance frequency. In order to increase the energy transmission efficiency, a series or parallel inductor should be used to compensate the capacitive impedance of the piezoelectric transducer. In this paper, the effect of the series matching inductor on the electromechanical characteristics of the piezoelectric transducer is analyzed. The dependency of the resonance/anti-resonance frequency, the effective electromechanical coupling coefficient, the electrical quality factor and the electro-acoustical efficiency on the matching inductor is obtained. It is shown that apart from compensating the capacitive impedance of the piezoelectric transducer, the series matching inductor can also change the electromechanical characteristics of the piezoelectric transducer. When series matching inductor is increased, the resonance frequency is decreased and the anti-resonance unchanged; the effective electromechanical coupling coefficient is increased. For the electrical quality factor and the electroacoustic efficiency, the dependency on the matching inductor is different when the transducer is operated at the resonance and the anti-resonance frequency. The electromechanical characteristics of the piezoelectric transducer with series matching inductor are measured. It is shown that the theoretically predicted relationship between the electromechanical characteristics and the series matching inductor is in good agreement with the experimental results. PMID:28208583

Design and characterization of Au/In4Se3/Ga2S3/C field effect transistors

NASA Astrophysics Data System (ADS)

Khusayfan, Najla M.; Qasrawi, A. F.; Khanfar, Hazem K.

2018-03-01

In the current work, the structural and electrical properties of the In4Se3/Ga2S3 interfaces are investigated. The X-ray analysis which concern the structural evolutions that is associated with the substrate type has shown that the hexagonal κ-In2Se3 and the selenium (rhombohedral) rich orthorhombic In4Se3 phases of InSe are grown onto glass and gold substrates, respectively, at substrate of temperature of 300 °C in a vacuum media. The coating of the κ-In2Se3 and of In4Se3 with amorphous layer of Ga2S3 is accompanied with uniform strain. The In4Se3/Ga2S3 interface is found to be of attractive quantum confinement features as it exhibited a conduction and valence band offsets of 0.20 and 1.86 eV, respectively. When the Au/In4Se3/Ga2S3 interface was contacted with carbon metallic point contact, it reveals a back to back Schottky hybrid device that behaves typically as metal-oxidesemiconductor field effect transition (MOSFET). The depletion capacitance analysis of this device revealed built in voltage values of 1.91 and 1.64 V at the Au and C sides, respectively. The designed MOSFET which is characterized in the frequency domain of 0.01-1.80 GHz is observed to exhibit, resonance-anti-resonance phenomena associated with negative capacitance effect in a wide domain of frequency that nominate it for applications in electronic circuits as parasitic capacitance minimizer, bus switching speed enhancer and low pass/high pass filter at microwave frequencies.

Simple telemetering system for signaling high rumen pressures.

PubMed

PAYNE, L C

1960-02-26

The construction of a modified Hartley oscillator transmitter activated through a pressure switch is described. When this device is placed within the rumen of a cow which is allowed unrestricted movement in the pasture, frequency-modulation signals are transmitted to a recording receiver whenever a preselected pressure is exceeded. The pressure at which transmission begins is determined by the capacitance across the coil of the circuit.

Study of dual radio frequency capacitively coupled plasma: an analytical treatment matched to an experiment

NASA Astrophysics Data System (ADS)

Saikia, P.; Bhuyan, H.; Escalona, M.; Favre, M.; Wyndham, E.; Maze, J.; Schulze, J.

2018-01-01

The behavior of a dual frequency capacitively coupled plasma (2f CCP) driven by 2.26 and 13.56 MHz radio frequency (rf) source is investigated using an approach that integrates a theoretical model and experimental data. The basis of the theoretical analysis is a time dependent dual frequency analytical sheath model that casts the relation between the instantaneous sheath potential and plasma parameters. The parameters used in the model are obtained by operating the 2f CCP experiment (2.26 MHz + 13.56 MHz) in argon at a working pressure of 50 mTorr. Experimentally measured plasma parameters such as the electron density, electron temperature, as well as the rf current density ratios are the inputs of the theoretical model. Subsequently, a convenient analytical solution for the output sheath potential and sheath thickness was derived. A comparison of the present numerical results is done with the results obtained in another 2f CCP experiment conducted by Semmler et al (2007 Plasma Sources Sci. Technol. 16 839). A good quantitative correspondence is obtained. The numerical solution shows the variation of sheath potential with the low and high frequency (HF) rf powers. In the low pressure plasma, the sheath potential is a qualitative measure of DC self-bias which in turn determines the ion energy. Thus, using this analytical model, the measured values of the DC self-bias as a function of low and HF rf powers are explained in detail.

Environmentally friendly power generator based on moving liquid dielectric and double layer effect

PubMed Central

Huynh, D. H.; Nguyen, T. C.; Nguyen, P. D.; Abeyrathne, C. D.; Hossain, Md. S.; Evans, R.; Skafidas, E.

2016-01-01

An electrostatic power generator converts mechanical energy to electrical energy by utilising the principle of variable capacitance. This change in capacitance is usually achieved by varying the gap or overlap between two parallel metallic plates. This paper proposes a novel electrostatic micro power generator where the change in capacitance is achieved by the movement of an aqueous solution of NaCl. A significant change in capacitance is achieved due to the higher than air dielectric constant of water and the Helmholtz double layer capacitor formed by ion separation at the electrode interfaces. The proposed device has significant advantages over traditional electrostatic devices which include low bias voltage and low mechanical frequency of operation. This is critical if the proposed device is to have utility in harvesting power from the environment. A figure of merit exceeding 10000(108μW)/(mm2HzV2) which is two orders of magnitude greater than previous devices, is demonstrated for a prototype operating at a bias voltage of 1.2 V and a droplet frequency of 6 Hz. Concepts are presented for large scale power harvesting. PMID:27255577

Realizing thin electromagnetic absorbers for wide incidence angles from commercially available planar circuit materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Glover, Brian B; Whites, Kieth W; Radway, Matthew J

2009-01-01

In this study, recent work on engineering R-card surface resistivity with printed metallic patterns is extended to the design of thin electromagnetic absorbers. Thin electromagnetic absorbers for wide incidence angles and both polarizations have recently been computationally verified by Luukkonen et al.. These absorbers are analytically modeled high-impedance surfaces with capacitive arrays of square patches implemented with relatively high dielectric constant and high loss substrate. However, the advantages provided by the accurate analytical model are largely negated by the need to obtain high dielectric constant material with accurately engineered loss. Fig. I(c) illustrates full-wave computational results for an absorber withoutmore » vias engineered as proposed by Luukkonen et al.. Unique values for the dielectric loss are required for different center frequencies. Parameters for the capacitive grid are D=5.0 mm and w=O.l mm for a center frequency of 3.36 GHz. The relative permittivity and thickness is 9.20(1-j0.234) and 1=3.048 mm. Consider a center frequency of5.81 GHz and again 1=3.048 mm, the required parameters for the capacitive grid are D=2.0 mm and w=0.2 mm where the required relative permittivity is now 9.20(1-j0.371) Admittedly, engineered dielectrics are themselves a historically interesting and fruitful research area which benefits today from advances in monolithic fabrication using direct-write of dielectrics with nanometer scale inclusions. However, our objective in the present study is to realize the advantages of the absorber proposed by Luukkonen et al. without resort to engineered lossy dielectrics. Specifically we are restricted to commercially available planer circuit materials without use of in-house direct-write technology or materials engineering capability. The materials considered here are TMM 10 laminate with (35 {mu}lm copper cladding with a complex permittivity 9.20-j0.0022) and Ohmegaply resistor conductor material (maximum 250 {Omega}/sq.). A thin electromagnetic absorber for incidence angles greater than 30deg. but less than 60deg. and both polarizations is computationally demonstrated. This absorber utilizes high-permittivity, low-loss microwave substrate in conjunction with an engineered lossy sheet impedance. The lossy sheet impedance is easily engineered with simple analytical approximations and can be manufactured from commercially available laminate materials on microwave substrate.« less

Impedance spectroscopy study of a catechol-modified activated carbon electrode as active material in electrochemical capacitor

NASA Astrophysics Data System (ADS)

Cougnon, C.; Lebègue, E.; Pognon, G.

2015-01-01

Modified activated carbon (Norit S-50) electrodes with electrochemical double layer (EDL) capacitance and redox capacitance contributions to the electric charge storage were tested in 1 M H2SO4 to quantify the benefit and the limitation of the surface redox reactions on the electrochemical performances of the resulting pseudo-capacitive materials. The electrochemical performances of an electrochemically anodized carbon electrode and a catechol-modified carbon electrode, which make use both EDL capacitance of the porous structure of the carbon and redox capacitance, were compared to the performances obtained for the pristine carbon. Nitrogen gas adsorption measurements have been used for studying the impact of the grafting on the BET surface area, pore size distribution, pore volume and average pore diameter. The electrochemical behavior of carbon materials was studied by cyclic voltammetry and electrochemical impedance spectroscopy (EIS). The EIS data were discussed by using a complex capacitance model that allows defining the characteristic time constant, the global capacitance and the frequency at which the maximum charge stored is reached. The EIS measurements were achieved at different dc potential values where a redox activity occurs and the evolution of the capacitance and the capacitive relaxation time with the electrode potential are presented. Realistic galvanostatic charge/discharge measurements performed at different current rates corroborate the results obtained by impedance.

Defect states and their energetic position and distribution in organic molecular semiconductors

NASA Astrophysics Data System (ADS)

Sharma, Akanksha; Yadav, Sarita; Kumar, Pramod; Ray Chaudhuri, Sumita; Ghosh, Subhasis

2013-04-01

Energetic position and distribution of defect states due to structural disorder in pentacene and copper phthalocyanine have been obtained by capacitance based spectroscopic techniques. It has been shown that capacitance-frequency and capacitance-voltage characteristics exhibit Gaussian distribution of traps with an energetic position at around 0.5 eV above the highest occupied molecular orbital level of the pentacene and CuPc. These traps have been created by varying growth conditions and almost identical trap parameters in pentacene and copper phthalocyanine indicate that similar structural disorder is responsible for these traps.

Transparent nanotubular capacitors based on transplanted anodic aluminum oxide templates.

PubMed

Zhang, Guozhen; Wu, Hao; Chen, Chao; Wang, Ti; Wu, Wenhui; Yue, Jin; Liu, Chang

2015-03-11

Transparent AlZnO/Al2O3/AlZnO nanocapacitor arrays have been fabricated by atomic layer deposition in anodic aluminum oxide templates transplanted on the AlZnO/glass substrates. A high capacitance density of 37 fF/μm(2) is obtained, which is nearly 5.8 times bigger than that of planar capacitors. The capacitance density almost remains the same in a broad frequency range from 1 kHz to 200 kHz. Moreover, a low leakage current density of 1.7 × 10(-7) A/cm(2) at 1 V has been achieved. The nanocapacitors exhibit an average optical transmittance of more than 80% in the visible range, and thus open the door to practical applications in transparent integrated circuits.

Micrometer-Scale Magnetic-Resonance-Coupled Radio-Frequency Identification and Transceivers for Wireless Sensors in Cells

NASA Astrophysics Data System (ADS)

Hu, Xiaolin; Aggarwal, Kamal; Yang, Mimi X.; Parizi, Kokab B.; Xu, Xiaoqing; Akin, Demir; Poon, Ada S. Y.; Wong, H.-S. Philip

2017-07-01

We report the design, analysis, and characterization of a three-inductor radio-frequency identification (RFID) and transceiver system for potential applications in individual cell tracking and monitoring. The RFID diameter is 22 μ m and can be naturally internalized by living cells. Using magnetic resonance coupling, the system shows resonance shifts when the RFID is present and also when the RFID loading capacitance changes. It operates at 60 GHz with a high signal magnitude up to -50 dB and a sensitivity of 0.2. This miniaturized RFID with a high signal magnitude is a promising step toward continuous, real-time monitoring of activities at cellular levels.

Study of dielectric phenomenon for P3HT: PCBM blend

NASA Astrophysics Data System (ADS)

Kumar, Sunil; Kumar, Manoj; Rathi, Sonika; Singh, Amarjeet

2017-05-01

In this present work we prepared the film sample of blend (P3HT (poly (3-hexylthiophene-2, 5-diyl)): PCBM ([6,6]-phenyl C61-butyric acid methyl ester)), P3HT and PCBM solution on ITO substrate by drop cast method. Capacitance and tangent loss (tan δ) were measured and dielectric constants έ and dielectric loss ɛ″ were deduced from them as function frequency at room temperature. Blend samples show strong frequency dependence as compared to pristine P3HT and pristine PCBM sample. The high dielectric constant in blend films at low frequency was attributed to characteristic slow relaxation process in polymers along with polarization of isolated grains in the blend sample.

Enhanced Passive RF-DC Converter Circuit Efficiency for Low RF Energy Harvesting

PubMed Central

Chaour, Issam; Fakhfakh, Ahmed; Kanoun, Olfa

2017-01-01

For radio frequency energy transmission, the conversion efficiency of the receiver is decisive not only for reducing sending power, but also for enabling energy transmission over long and variable distances. In this contribution, we present a passive RF-DC converter for energy harvesting at ultra-low input power at 868 MHz. The novel converter consists of a reactive matching circuit and a combined voltage multiplier and rectifier. The stored energy in the input inductor and capacitance, during the negative wave, is conveyed to the output capacitance during the positive one. Although Dickson and Villard topologies have principally comparable efficiency for multi-stage voltage multipliers, the Dickson topology reaches a better efficiency within the novel ultra-low input power converter concept. At the output stage, a low-pass filter is introduced to reduce ripple at high frequencies in order to realize a stable DC signal. The proposed rectifier enables harvesting energy at even a low input power from −40 dBm for a resistive load of 50 kΩ. It realizes a significant improvement in comparison with state of the art solutions. PMID:28282910

Atomic-layer-deposited Al2O3-HfO2-Al2O3 dielectrics for metal-insulator-metal capacitor applications

NASA Astrophysics Data System (ADS)

Ding, Shi-Jin; Zhu, Chunxiang; Li, Ming-Fu; Zhang, David Wei

2005-08-01

Atomic-layer-deposited Al2O3-HfO2-Al2O3 dielectrics have been investigated to replace conventional silicon oxide and nitride for radio frequency and analog metal-insulator-metal capacitors applications. In the case of 1-nm-Al2O3, sufficiently good electrical performances are achieved, including a high dielectric constant of ˜17, a small dissipation factor of 0.018 at 100kHz, an extremely low leakage current of 7.8×10-9A/cm2 at 1MV/cm and 125°C, perfect voltage coefficients of capacitance (74ppm/V2 and 10ppm/V). The quadratic voltage coefficient of capacitance decreases with the applied frequency due to the change of relaxation time with different carrier mobility in insulator, and correlates with the dielectric composition and thickness, which is of intrinsic property owing to electric field polarization. Furthermore, the conduction mechanism of the AHA dielectrics is also discussed, indicating the Schottky emission dominated at room temperature.

Optimization of L-shaped tunneling field-effect transistor for ambipolar current suppression and Analog/RF performance enhancement

NASA Astrophysics Data System (ADS)

Li, Cong; Zhao, Xiaolong; Zhuang, Yiqi; Yan, Zhirui; Guo, Jiaming; Han, Ru

2018-03-01

L-shaped tunneling field-effect transistor (LTFET) has larger tunnel area than planar TFET, which leads to enhanced on-current ION . However, LTFET suffers from severe ambipolar behavior, which needs to be further optimized for low power and high-frequency applications. In this paper, both hetero-gate-dielectric (HGD) and lightly doped drain (LDD) structures are introduced into LTFET for suppression of ambipolarity and improvement of analog/RF performance of LTFET. Current-voltage characteristics, the variation of energy band diagrams, distribution of band-to-band tunneling (BTBT) generation and distribution of electric field are analyzed for our proposed HGD-LDD-LTFET. In addition, the effect of LDD on the ambipolar behavior of LTFET is investigated, the length and doping concentration of LDD is also optimized for better suppression of ambipolar current. Finally, analog/RF performance of HGD-LDD-LTFET are studied in terms of gate-source capacitance, gate-drain capacitance, cut-off frequency, and gain bandwidth production. TCAD simulation results show that HGD-LDD-LTFET not only drastically suppresses ambipolar current but also improves analog/RF performance compared with conventional LTFET.

Enhanced Passive RF-DC Converter Circuit Efficiency for Low RF Energy Harvesting.

PubMed

Chaour, Issam; Fakhfakh, Ahmed; Kanoun, Olfa

2017-03-09

For radio frequency energy transmission, the conversion efficiency of the receiver is decisive not only for reducing sending power, but also for enabling energy transmission over long and variable distances. In this contribution, we present a passive RF-DC converter for energy harvesting at ultra-low input power at 868 MHz. The novel converter consists of a reactive matching circuit and a combined voltage multiplier and rectifier. The stored energy in the input inductor and capacitance, during the negative wave, is conveyed to the output capacitance during the positive one. Although Dickson and Villard topologies have principally comparable efficiency for multi-stage voltage multipliers, the Dickson topology reaches a better efficiency within the novel ultra-low input power converter concept. At the output stage, a low-pass filter is introduced to reduce ripple at high frequencies in order to realize a stable DC signal. The proposed rectifier enables harvesting energy at even a low input power from -40 dBm for a resistive load of 50 kΩ. It realizes a significant improvement in comparison with state of the art solutions.

Imaging wet granules with different flow patterns by electrical capacitance tomography and microwave tomography

NASA Astrophysics Data System (ADS)

Wang, H. G.; Zhang, J. L.; Ramli, M. F.; Mao, M. X.; Ye, J. M.; Yang, W. Q.; Wu, Z. P.

2016-11-01

The moisture content of granules in fluidised bed drying, granulation and coating processes can typically be between 1%~25%, resulting in the change of permittivity and conductivity during the processes. Electrical capacitance tomography (ECT) has been used for this purpose, but has a limit because too much water can cause a problem in capacitance measurement. Considering that microwave tomography (MWT) has a wide range of frequency (1~2.5 GHz) and can be used to measure materials with high permittivity and conductivity, the objective of this research is to combine ECT and MWT together to investigate the solids concentration with different moisture content and different flow patterns. The measurement results show that both ECT and MWT are functions of moisture content as well as flow patterns, and their measurements are complementary to each other. This is the first time that these two tomography modalities have been combined together and applied to image the complex solids distribution. The obtained information may be used for the process control of fluidised bed drying, granulation and coating to improve operation efficiency.

Study of HV Dielectrics for High Frequency Operation in Linear and Nonlinear Transmission Lines (NLTLs) and Simulation and Development of Hybrid Nonlinear Lines for RF Generation

DTIC Science & Technology

2016-01-27

presented. Besides, Spice simulation provides an excellent way of studying the NLTL principle operation by comparing them with the experimental...high voltage nonlinear capacitive line (NLCL) using commercial BT and PZT ceramic capacitors. Corresponding NLCL Spice simulation is provided for...which causes a long tail on the output pulse. In special for PZT, Spice simulation of a line with respective linear capacitors illustrates its weak

Flexible, High-Speed CdSe Nanocrystal Integrated Circuits.

PubMed

Stinner, F Scott; Lai, Yuming; Straus, Daniel B; Diroll, Benjamin T; Kim, David K; Murray, Christopher B; Kagan, Cherie R

2015-10-14

We report large-area, flexible, high-speed analog and digital colloidal CdSe nanocrystal integrated circuits operating at low voltages. Using photolithography and a newly developed process to fabricate vertical interconnect access holes, we scale down device dimensions, reducing parasitic capacitances and increasing the frequency of circuit operation, and scale up device fabrication over 4 in. flexible substrates. We demonstrate amplifiers with ∼7 kHz bandwidth, ring oscillators with <10 μs stage delays, and NAND and NOR logic gates.

Admittance measurements in the quantum Hall effect regime

NASA Astrophysics Data System (ADS)

Hernández, C.; Consejo, C.; Chaubet, C.

2014-11-01

In this work we present an admittance study of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime. We have studied several Hall bars in different contacts configurations in the frequency range 100 Hz-1 MHz. Our interpretation is based on the Landauer-Büttiker theory and takes into account both the capacitance and the topology of the coaxial cables which are connected to the sample holder. We show that we always observe losses through the capacitive impedance of the coaxial cables, except in the two contacts configuration in which the cable capacitance does not influence the admittance measurement of the sample. In this case, we measure the electrochemical capacitance of the 2DEG and show its dependence with the filling factor ν.

Capacitance-voltage characterization of Al/Al2O3/PVA-PbSe MIS diode

NASA Astrophysics Data System (ADS)

Gawri, Isha; Sharma, Mamta; Jindal, Silky; Singh, Harpreet; Tripathi, S. K.

2018-05-01

The present paper reports the capacitance-voltage characterization of Al/Al2O3/PVA-PbSe MIS diode using chemical bath deposition method. Here anodic alumina layer prepared using electrolytic deposition method on Al substrate is used as insulating material. Using the capacitance-voltage variation at a fixed frequency, the different parameters such as Depletion layer width, Barrier height, Built-in voltage and Carrier concentration has been calculated at room temperature as well as at temperature range from 123 K to 323 K. With the increase in temperature the barrier height and depletion layer width follow a decreasing trend. Therefore, the capacitance-voltage characterization at different temperatures characterization provides strong evidence that the properties of MIS diode are primarily affected by diode parameters.

An HF coaxial bridge for measuring impedance ratios up to 1 MHz

NASA Astrophysics Data System (ADS)

Kucera, J.; Sedlacek, R.; Bohacek, J.

2012-08-01

A four-terminal pair coaxial ac bridge developed for calibrating both resistance and capacitance ratios and working in the frequency range from 100 kHz up to 1 MHz is described. A reference inductive voltage divider (IVD) makes it possible to calibrate ratios 1:1 and 10:1 with uncertainty of a few parts in 105. The IVD is calibrated by means of a series-parallel capacitance device (SPCD). Use of the same ac bridge with minimal changes for calibrating the SPCD, IVD and unknown impedances simplifies the whole calibration process. The bridge balance conditions are fulfilled with simple capacitance and resistance decades and by injecting voltage supplied from the auxiliary direct digital synthesizer. Bridge performance was checked on the basis of resistance ratio measurements and also capacitance ratio measurements.

Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation

NASA Astrophysics Data System (ADS)

Münzenrieder, Niko; Salvatore, Giovanni A.; Petti, Luisa; Zysset, Christoph; Büthe, Lars; Vogt, Christian; Cantarella, Giuseppe; Tröster, Gerhard

2014-12-01

In recent years new forms of electronic devices such as electronic papers, flexible displays, epidermal sensors, and smart textiles have become reality. Thin-film transistors (TFTs) are the basic blocks of the circuits used in such devices and need to operate above 100 MHz to efficiently treat signals in RF systems and address pixels in high resolution displays. Beyond the choice of the semiconductor, i.e., silicon, graphene, organics, or amorphous oxides, the junctionless nature of TFTs and its geometry imply some limitations which become evident and important in devices with scaled channel length. Furthermore, the mechanical instability of flexible substrates limits the feature size of flexible TFTs. Contact resistance and overlapping capacitance are two parasitic effects which limit the transit frequency of transistors. They are often considered independent, while a deeper analysis of TFTs geometry imposes to handle them together; in fact, they both depend on the overlapping length (LOV) between source/drain and the gate contacts. Here, we conduct a quantitative analysis based on a large number of flexible ultra-scaled IGZO TFTs. Devices with three different values of overlap length and channel length down to 0.5 μm are fabricated to experimentally investigate the scaling behavior of the transit frequency. Contact resistance and overlapping capacitance depend in opposite ways on LOV. These findings establish routes for the optimization of the dimension of source/drain contact pads and suggest design guidelines to achieve megahertz operation in flexible IGZO TFTs and circuits.

A Micromechanical RF Channelizer

NASA Astrophysics Data System (ADS)

Akgul, Mehmet

The power consumption of a radio generally goes as the number and strength of the RF signals it must process. In particular, a radio receiver would consume much less power if the signal presented to its electronics contained only the desired signal in a tiny percent bandwidth frequency channel, rather than the typical mix of signals containing unwanted energy outside the desired channel. Unfortunately, a lack of filters capable of selecting single channel bandwidths at RF forces the front-ends of contemporary receivers to accept unwanted signals, and thus, to operate with sub-optimal efficiency. This dissertation focuses on the degree to which capacitive-gap transduced micromechanical resonators can achieve the aforementioned RF channel-selecting filters. It aims to first show theoretically that with appropriate scaling capacitive-gap transducers are strong enough to meet the needed coupling requirements; and second, to fully detail an architecture and design procedure needed to realize said filters. Finally, this dissertation provides an actual experimentally demonstrated RF channel-select filter designed using the developed procedures and confirming theoretical predictions. Specifically, this dissertation introduces four methods that make possible the design and fabrication of RF channel-select filters. The first of these introduces a small-signal equivalent circuit for parallel-plate capacitive-gap transduced micromechanical resonators that employs negative capacitance to model the dependence of resonance frequency on electrical stiffness in a way that facilitates the analysis of micromechanical circuits loaded with arbitrary electrical impedances. The new circuit model not only correctly predicts the dependence of electrical stiffness on the impedances loading the input and output electrodes of parallel-plate capacitive-gap transduced micromechanical device, but does so in a visually intuitive way that identifies current drive as most appropriate for applications that must be stable against environmental perturbations, such as acceleration or power supply variations. Measurements on fabricated devices in fact confirm predictions by the new model of up to 4x improvement in frequency stability against DC-bias voltage variations for contour-mode disk resonators as the resistance loading their ports increases. By enhancing circuit visualization, this circuit model makes more obvious the circuit design procedures and topologies most beneficial for certain mechanical circuits, e.g., filters and oscillators. The second method enables simultaneous low motional resistance ( Rx 70,000) at 61 MHz using an improved ALD-partial electrode-to-resonator gap filling technique that reduces the Q-limiting surface losses of previous renditions by adding an alumina pre-coating before ALD of the gap-filling high-k dielectric. This effort increases the Q over the ˜10,000 of previous renditions by more than 6x towards demonstration of the first VHF micromechanical resonators in any material, piezoelectric or not, to meet the simultaneous high Q (>50,000) and low motional resistance Rx (< 200O) specs highly desired for front-end frequency channelizer requirements in cognitive and software-defined radio architectures. The methods presented in this chapter finally overcome the high impedance bottleneck that has plagued capacitively transduced micro-mechanical resonators over the past decade. The third method introduces a capacitively transduced micromechanical resonator constructed in hot filament CVD boron-doped microcrystalline diamond (MCD) structural material that posts a measured Q of 146,580 at 232.441 kHz, which is 3x higher than the previous high for conductive polydiamond. Moreover, radial-contour mode disk resonators fabricated in the same MCD film and using material mismatched stems exhibit a Q of 71,400 at 299.86 MHz. The material used here further exhibits an acoustic velocity of 18,516 m/s, which is now the highest to date among available surface micromachinable materials. For many potential applications, the hot filament CVD method demonstrated in this work is quite enabling, since it provides a much less expensive method than microwave CVD based alternatives for depositing doped CVD diamond over large wafers (e.g., 8") for batch fabrication. The first three methods described so far focus on a single vibrating disk resonator and improve its electrical equivalent modeling, C x/Co, and Q. Once we craft the resonator that meets the challenging design requirements of RF channel-select filters, the last method presents a design hierarchy that achieves the desired filter response with a specific center frequency, bandwidth, and filter termination resistance. The design procedure culminates in specific values for all mechanical geometry variables necessary for the filter layout, such as disk radii, and beam widths; and process design variables such as resonator material thickness and capacitive actuation gap spacing. Finally, the experimental results introduce a 39nm-gap capacitive transducer, voltage-controlled frequency tuning, and a stress relieving coupled array design that enable a 0.09% bandwidth 223.4 MHz channel-select filter with only 2.7dB of in-band insertion loss and 50dB rejection of out-of-band interferers. This amount of rejection is more than 23dB better than previous capacitive-gap transduced filter designs that did not benefit from sub-50nm gaps. It also comes in tandem with a 20dB shape factor of 2.7 realized by a hierarchical mechanical circuit design utilizing 206 micromechanical circuit elements, all contained in an area footprint of only 600mumx420mum. The key to such low insertion loss for this tiny percent bandwidth is Q's>8,800 supplied by polysilicon disk resonators employing for the first time capacitive transducer gaps small enough to generate coupling strengths of C x/Co ˜0.1%, which is a 6.1x improvement over previous efforts. The filter structure utilizes electrical tuning to correct frequency mismatches due to process variations, where a dc tuning voltage of 12.1 V improves the filter insertion loss by 1.8 dB and yields the desired equiripple passband shape. An electrical equivalent circuit is presented that captures not only the ideal filter response, but also parasitic non-idealities that create electrical feed-through, where simulation of the derived equivalent circuit matches the measured filter spectrum closely both in-band and out-of-band. The combined 2.7dB passband insertion loss and 50dB stopband rejection of the demonstrated 206-element 0.09% bandwidth 223.4-MHz differential micromechanical disk filter represents a landmark for capacitive-gap transduced micromechanical resonator technology. This demonstration proves that the mere introduction of small gaps, on the order of 39 nm, goes a long way towards moving this technology from a research curiosity to practical performance specs commensurate with the needs of actual RF channel-selecting receiver front-ends. It also emphasizes the need for tuning and defensive stress-relieving structural design when percent bandwidths and gaps shrink, all demonstrated by the work herein. Perhaps most encouraging is that the models presented in dissertation used to design the filter and predict its behavior seem to be all be spot on. This means that predictions using these models foretelling 1-GHz filters with sub-200O impedances enabled by 20nm-gaps might soon come true, bringing this technology ever closer to someday realizing the ultra-low power channel-selecting communication front-ends targeted for autonomous set-and-forget sensor networks. Work towards these goals continues.

Tunable Reduced Size Planar Folded Slot Antenna Utilizing Varactor Diodes

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Ponchak, George E.; Jordan, Jennifer L.; Jastram, Nathan; Mahaffey, Joshua V.

2010-01-01

A tunable folded slot antenna that utilizes varactor diodes is presented. The antenna is fabricated on Rogers 6006 Duriod with a dielectric constant and thickness of 6.15 and 635 m, respectively. A copper cladding layer of 17 m defines the antenna on the top side (no ground on backside). The antenna is fed with a CPW 50 (Omega) feed line, has a center frequency of 3 GHz, and incorporates Micrometrics microwave hyper-abrupt 500MHV varactors to tune the resonant frequency. The varactors have a capacitance range of 2.52 pF at 0 V to 0.4 pF at 20 V; they are placed across the radiating slot of the antenna. The tunable 10 dB bandwidth of the 3 GHz antenna is 150 MHz. The varactors also reduce the size of the antenna by 30% by capacitively loading the resonating slot line. At the center frequency, 3 GHz, the antenna has a measured return loss of 44 dB and a gain of 1.6 dBi. Full-wave electromagnetic simulations using HFSS are presented that validate the measured data. Index Terms capacitive loading, Duriod, folded slot antenna, varactor.

Tunable resonant sensing means to sense a particular frequency in a high energy charged particle beam and generate a frequency-domain signal in response

DOEpatents

Nakamura, Michiyuki; Nolan, Marvin L.

1988-01-01

A frequency domain sensing system is disclosed for sensing the position of a high energy beam of charged particles traveling within a housing which comprises a plurality of sensors positioned in the wall of the housing radially around the axis of the beam. Each of the sensors further comprises a first electrode of predetermined shape received in a bore in the housing to define a fixed capacitance and an inductance structure attached to the electrode to provide an inductance for the sensing means which will provide an LC circuit which will resonate at a predetermined frequency known to exist in the beam of charged particles. The sensors are further provided with tuning apparatus associated with the inductance structure to vary the amount of the inductance to thereby tune the sensors to the predetermined frequency prior to transmission of the signal to signal detection circuitry.

Comprehensive analysis of sub-20 nm black phosphorus based junctionless-recessed channel MOSFET for analog/RF applications

NASA Astrophysics Data System (ADS)

Kumar, Ajay; Tripathi, M. M.; Chaujar, Rishu

2018-04-01

In this work, a comprehensive analog and RF performance of a novel Black Phosphorus-Junctionless-Recessed Channel (BP-JL-RC) MOSFET has been explored at 45 nm technology node (Gate length = 20 nm). The integration of black phosphorus with junctionless recessed channel MOSFET, leads to higher drain current of about 0.3 mA and excellent switching ratio (of the order of 1011) due to reduced off-current which leads to improvement in sub-threshold slope (SS) (67mV/dec). Further, RF performance metrics have also been studied with an aim to analyze high-frequency performance. The following FOMs have been evaluated: cut-off frequency (fT), maximum oscillator frequency (fMAX), stern stability factor, various power gains and parasitic capacitances at THz frequency range. Thus, in addition to the high packing density offered by RC MOSFET, the proposed design finds numerous application at THz frequency making it a promising candidate at wafer scale integration level.

Microwave conductance properties of aligned multiwall carbon nanotube textile sheets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brown, Brian L.; Martinez, Patricia; Zakhidov, Anvar A.

2015-07-06

Understanding the conductance properties of multi-walled carbon nanotube (MWNT) textile sheets in the microwave regime is essential for their potential use in high-speed and high-frequency applications. To expand current knowledge, complex high-frequency conductance measurements from 0.01 to 50 GHz and across temperatures from 4.2 K to 300 K and magnetic fields up to 2 T were made on textile sheets of highly aligned MWNTs with strand alignment oriented both parallel and perpendicular to the microwave electric field polarization. Sheets were drawn from 329 and 520 μm high MWNT forests that resulted in different DC resistance anisotropy. For all samples, themore » microwave conductance can be modeled approximately by a shunt capacitance in parallel with a frequency-independent conductance, but with no inductive contribution. Finally, this is consistent with diffusive Drude conduction as the primary transport mechanism up to 50 GHz. Further, it is found that the microwave conductance is essentially independent of both temperature and magnetic field.« less

Radio Frequency Radiation Dosimetry Handbook (Fifth Edition)

DTIC Science & Technology

2009-07-01

the capacitance of the load . Assuming that the pulse shape is perfectly rectangular, the power dissipation in the sample during the pulse can be...microwave pulses at 2.37 GHz: No effect on vigilance performance in monkeys. Joint Naval Aerospace Medical Research Laboratory Research Report, NAMRL...Klauenberg, B. J., & Erwin, D. N. (1989). Lack of behavioral effects of high-peak-power microwave pulses from an axially extracted virtual cathode

60 GHz Tapered Transmission Line Resonators

DTIC Science & Technology

2008-09-15

and out small capacitors, using varactors for part of the capacitance, or both. However, at high frequencies the size of these lumped components...the full substrate stack is made up of many oxide layers with different EM characteristics. To speed up simulation time it is imperative to simplify...the substrate stackup dramatically. This was achieved by using only one oxide layer which encompasses all metal layers. The character- istics of this

Direct EPR irradiation of a sample using a quartz oscillator operating at 250 MHz for EPR measurements.

PubMed

Yokoyama, Hidekatsu

2012-01-01

Direct irradiation of a sample using a quartz oscillator operating at 250 MHz was performed for EPR measurements. Because a quartz oscillator is a frequency fixed oscillator, the operating frequency of an EPR resonator (loop-gap type) was tuned to that of the quartz oscillator by using a single-turn coil with a varactor diode attached (frequency shift coil). Because the frequency shift coil was mobile, the distance between the EPR resonator and the coil could be changed. Coarse control of the resonant frequency was achieved by changing this distance mechanically, while fine frequency control was implemented by changing the capacitance of the varactor electrically. In this condition, EPR measurements of a phantom (comprised of agar with a nitroxide radical and physiological saline solution) were made. To compare the presented method with a conventional method, the EPR measurements were also done by using a synthesizer at the same EPR frequency. In the conventional method, the noise level increased at high irradiation power. Because such an increase in the noise was not observed in the presented method, high sensitivity was obtained at high irradiation power. Copyright © 2011 Elsevier Inc. All rights reserved.

Integrated Millimeter-Wave Frequency Multiplers

NASA Astrophysics Data System (ADS)

Schoenthal, Gerhard S.; Deaver, B. S.; Crowe, T. W.; Bishop, W. L.; Saini, K.; Bradley, R. F.

2001-11-01

Many of the molecules of interest to radio astronomers and atmospheric chemists resonate at frequencies in the millimeter and submillimeter wavelength bands. To measure the spectra of these molecules scientists rely on heterodyne receivers that convert the high frequency signal to the GHz band where it is readily amplified and analyzed. One of the challenges of developing suitable receiver systems is the development of compact, reliable and affordable sources of local oscillator power at frequencies in excess of 100 GHz. One useful solution is to use GaAs Schottky diodes, in their varactor mode, to generate high frequency harmonics of lower frequency sources such as Gunn oscillators. As a part of a multi-national radio astronomy project, the Atacama Millimeter Large Array (ALMA), we have designed and fabricated a broadband frequency tripler with an output centered at 240 GHz. It is integrated on a quartz substrate to greatly reduce the parasitic capacitance and thereby improve electrical performance. The integrated circuit was designed to require no oxides or ohmic contacts, thereby easing fabrication. This talk will discuss the novel millimeter-wave integrated circuit fabrication process and the initial results.

A bootstrapped, low-noise, and high-gain photodetector for shot noise measurement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Haijun; Yang, Wenhai; Li, Zhixiu

2014-01-15

We presented a low-noise, high-gain photodetector based on the bootstrap structure and the L-C (inductance and capacitance) combination. Electronic characteristics of the photodetector, including electronic noise, gain and frequency response, and dynamic range, were verified through a single-frequency Nd:YVO{sub 4} laser at 1064 nm with coherent output. The measured shot noise of 50 μW laser was 13 dB above the electronic noise at the analysis frequency of 2 MHz, and 10 dB at 3 MHz. And a maximum clearance of 28 dB at 2 MHz was achieved when 1.52 mW laser was illuminated. In addition, the photodetector showed excellent linearitiesmore » for both DC and AC amplifications in the laser power range between 12.5 μW and 1.52 mW.« less

Note: A calibration method to determine the lumped-circuit parameters of a magnetic probe.

PubMed

Li, Fuming; Chen, Zhipeng; Zhu, Lizhi; Liu, Hai; Wang, Zhijiang; Zhuang, Ge

2016-06-01

This paper describes a novel method to determine the lumped-circuit parameters of a magnetic inductive probe for calibration by using Helmholtz coils with high frequency power supply (frequency range: 10 kHz-400 kHz). The whole calibration circuit system can be separated into two parts: "generator" circuit and "receiver" circuit. By implementing the Fourier transform, two analytical lumped-circuit models, with respect to these separated circuits, are constructed to obtain the transfer function between each other. Herein, the precise lumped-circuit parameters (including the resistance, inductance, and capacitance) of the magnetic probe can be determined by fitting the experimental data to the transfer function. Regarding the fitting results, the finite impedance of magnetic probe can be used to analyze the transmission of a high-frequency signal between magnetic probes, cables, and acquisition system.

Novel matched amplifiers with low noise positive feedback. Part II: Resistive-capacitive feedback

NASA Astrophysics Data System (ADS)

Bruck, Y.; Zakharenko, V.

2010-02-01

This article is a continuation of consideration for an amplifier with resistive positive feedback (RPF) (Bruck (2008), 'Novel Matched LNA with Low Noise Positive Feedback. Part 1: General Features and Resistive Feedback', International Journal of Electronics, 95, 441-456). We propose here new configuration schematics of a transformer-less selective LNA with resistive-capacitive positive feedback (RCPF). A circuit of an amplifier with a transistor connected into a circuit with a common base (CB) configuration is analysed in detail. RCPF and RPF circuits are compared. It is shown that the LNA RCPF provides any pass-band, a good level of input and output matching, a minimum noise temperature which is significantly lower than that of the LNA RPF, a rather high linearity, and stability of amplification. The simulation results and some experimental data for the amplifiers intended for use in the LOFAR radiotelescope (Konovalenko et al. (2003), 'Thirty Element Array Antenna as a Prototype of a Huge Low-Frequency Radio Telescope,' Experimental Astronomy, 16, 149-164; Konovalenko (2007), 'Ukrainian Contribution to LOFAR', A scientific workshop, organised by LOFAR/ASTRON' Emmen, Netherlands, 23-27. http://www.lofar.org/workshop) are given. It is assumed that such devices are of a special interest for high-frequency integral circuits (IC).

Understanding Artifacts in Impedance Spectroscopy

DOE PAGES

Veal, B. W.; Baldo, P. M.; Paulikas, A. P.; ...

2014-11-22

Four-terminal measurements of impedance spectra have long been troubled by the presence of high frequency artifacts that typically indicate unphysically large inductive behavior. In this paper, we follow up on the observation of Fleig et al., that voltage and current are necessarily measured in different locations of the potentiostat circuit, and that, typically, the electrometer input is a virtual ground. In this case, the capacitance of coaxial cables that connect sample electrodes to the potentiostat provides a high frequency conduction path to ground, so that some of the current that passes through the sample bypasses the electrometer. In four-electrode measurements,more » this mechanism produces the observed inductive artifacts. We examine a variety of simulated samples, with calculations compared to measurements of relevant circuits, to quantitatively investigate the nature of the artifacts. Model results agree with measurements when the leakage capacitances are properly included in the circuit analyses. With understanding of the origin of the inductive artifacts, the four-electrode method can be effectively utilized, enabling a combination of two-, three- and four-electrode measurements to be used to best advantage. Finally, using this combination of electrode configurations, temperature dependent measurements of SrTiO 3, Y 2O 3-stabilized ZrO 2, and In 2O 3 films deposited on YSZ substrates are presented.« less

Programmable electronic synthesized capacitance

NASA Technical Reports Server (NTRS)

Kleinberg, Leonard L. (Inventor)

1987-01-01

A predetermined and variable synthesized capacitance which may be incorporated into the resonant portion of an electronic oscillator for the purpose of tuning the oscillator comprises a programmable operational amplifier circuit. The operational amplifier circuit has its output connected to its inverting input, in a follower configuration, by a network which is low impedance at the operational frequency of the circuit. The output of the operational amplifier is also connected to the noninverting input by a capacitor. The noninverting input appears as a synthesized capacitance which may be varied with a variation in gain-bandwidth product of the operational amplifier circuit. The gain-bandwidth product may, in turn, be varied with a variation in input set current with a digital to analog converter whose output is varied with a command word. The output impedance of the circuit may also be varied by the output set current. This circuit may provide very small ranges in oscillator frequency with relatively large control voltages unaffected by noise.

Robust and conductive two-dimensional metal-organic frameworks with exceptionally high volumetric and areal capacitance

DOE PAGES

Feng, Dawei; Lei, Ting; Lukatskaya, Maria R.; ...

2018-01-01

For miniaturized capacitive energy storage, volumetric and areal capacitances are more important metrics than gravimetric ones because of the constraints imposed by device volume and chip area. Typically used in commercial supercapacitors, porous carbons, although they provide a stable and reliable performance, lack volumetric performance because of their inherently low density and moderate capacitances. In this paper, we report a high-performing electrode based on conductive hexaaminobenzene (HAB)-derived two-dimensional metal-organic frameworks (MOFs). In addition to possessing a high packing density and hierarchical porous structure, these MOFs also exhibit excellent chemical stability in both acidic and basic aqueous solutions, which is inmore » sharp contrast to conventional MOFs. Submillimetre-thick pellets of HAB MOFs showed high volumetric capacitances up to 760 F cm -3 and high areal capacitances over 20 F cm -2. Furthermore, the HAB MOF electrodes exhibited highly reversible redox behaviours and good cycling stability with a capacitance retention of 90% after 12,000 cycles. In conclusion, these promising results demonstrate the potential of using redox-active conductive MOFs in energy-storage applications.« less

Robust and conductive two-dimensional metal-organic frameworks with exceptionally high volumetric and areal capacitance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Dawei; Lei, Ting; Lukatskaya, Maria R.

For miniaturized capacitive energy storage, volumetric and areal capacitances are more important metrics than gravimetric ones because of the constraints imposed by device volume and chip area. Typically used in commercial supercapacitors, porous carbons, although they provide a stable and reliable performance, lack volumetric performance because of their inherently low density and moderate capacitances. In this paper, we report a high-performing electrode based on conductive hexaaminobenzene (HAB)-derived two-dimensional metal-organic frameworks (MOFs). In addition to possessing a high packing density and hierarchical porous structure, these MOFs also exhibit excellent chemical stability in both acidic and basic aqueous solutions, which is inmore » sharp contrast to conventional MOFs. Submillimetre-thick pellets of HAB MOFs showed high volumetric capacitances up to 760 F cm -3 and high areal capacitances over 20 F cm -2. Furthermore, the HAB MOF electrodes exhibited highly reversible redox behaviours and good cycling stability with a capacitance retention of 90% after 12,000 cycles. In conclusion, these promising results demonstrate the potential of using redox-active conductive MOFs in energy-storage applications.« less

Robust and conductive two-dimensional metal-organic frameworks with exceptionally high volumetric and areal capacitance

NASA Astrophysics Data System (ADS)

Feng, Dawei; Lei, Ting; Lukatskaya, Maria R.; Park, Jihye; Huang, Zhehao; Lee, Minah; Shaw, Leo; Chen, Shucheng; Yakovenko, Andrey A.; Kulkarni, Ambarish; Xiao, Jianping; Fredrickson, Kurt; Tok, Jeffrey B.; Zou, Xiaodong; Cui, Yi; Bao, Zhenan

2018-01-01

For miniaturized capacitive energy storage, volumetric and areal capacitances are more important metrics than gravimetric ones because of the constraints imposed by device volume and chip area. Typically used in commercial supercapacitors, porous carbons, although they provide a stable and reliable performance, lack volumetric performance because of their inherently low density and moderate capacitances. Here we report a high-performing electrode based on conductive hexaaminobenzene (HAB)-derived two-dimensional metal-organic frameworks (MOFs). In addition to possessing a high packing density and hierarchical porous structure, these MOFs also exhibit excellent chemical stability in both acidic and basic aqueous solutions, which is in sharp contrast to conventional MOFs. Submillimetre-thick pellets of HAB MOFs showed high volumetric capacitances up to 760 F cm-3 and high areal capacitances over 20 F cm-2. Furthermore, the HAB MOF electrodes exhibited highly reversible redox behaviours and good cycling stability with a capacitance retention of 90% after 12,000 cycles. These promising results demonstrate the potential of using redox-active conductive MOFs in energy-storage applications.

Equivalent circuit for the characterization of the resonance mode in piezoelectric systems

NASA Astrophysics Data System (ADS)

Fernández-Afonso, Y.; García-Zaldívar, O.; Calderón-Piñar, F.

2015-12-01

The impedance properties in polarized piezoelectric can be described by electric equivalent circuits. The classic circuit used in the literature to describe real systems is formed by one resistor (R), one inductance (L) and one capacitance C connected in series and one capacity (C0) connected in parallel with the formers. Nevertheless, the equation that describe the resonance and anti-resonance frequencies depends on a complex manner of R, L, C and C0. In this work is proposed a simpler model formed by one inductance (L) and one capacity (C) in series; one capacity (C0) in parallel; one resistor (RP) in parallel and one resistor (RS) in series with other components. Unlike the traditional circuit, the equivalent circuit elements in the proposed model can be simply determined by knowing the experimental values of the resonance frequency fr, anti-resonance frequency fa, impedance module at resonance frequency |Zr|, impedance module at anti-resonance frequency |Za| and low frequency capacitance C0, without fitting the impedance experimental data to the obtained equation.

Visual prosthesis wireless energy transfer system optimal modeling.

PubMed

Li, Xueping; Yang, Yuan; Gao, Yong

2014-01-16

Wireless energy transfer system is an effective way to solve the visual prosthesis energy supply problems, theoretical modeling of the system is the prerequisite to do optimal energy transfer system design. On the basis of the ideal model of the wireless energy transfer system, according to visual prosthesis application condition, the system modeling is optimized. During the optimal modeling, taking planar spiral coils as the coupling devices between energy transmitter and receiver, the effect of the parasitic capacitance of the transfer coil is considered, and especially the concept of biological capacitance is proposed to consider the influence of biological tissue on the energy transfer efficiency, resulting in the optimal modeling's more accuracy for the actual application. The simulation data of the optimal model in this paper is compared with that of the previous ideal model, the results show that under high frequency condition, the parasitic capacitance of inductance and biological capacitance considered in the optimal model could have great impact on the wireless energy transfer system. The further comparison with the experimental data verifies the validity and accuracy of the optimal model proposed in this paper. The optimal model proposed in this paper has a higher theoretical guiding significance for the wireless energy transfer system's further research, and provide a more precise model reference for solving the power supply problem in visual prosthesis clinical application.

Visual prosthesis wireless energy transfer system optimal modeling

PubMed Central

2014-01-01

Background Wireless energy transfer system is an effective way to solve the visual prosthesis energy supply problems, theoretical modeling of the system is the prerequisite to do optimal energy transfer system design. Methods On the basis of the ideal model of the wireless energy transfer system, according to visual prosthesis application condition, the system modeling is optimized. During the optimal modeling, taking planar spiral coils as the coupling devices between energy transmitter and receiver, the effect of the parasitic capacitance of the transfer coil is considered, and especially the concept of biological capacitance is proposed to consider the influence of biological tissue on the energy transfer efficiency, resulting in the optimal modeling’s more accuracy for the actual application. Results The simulation data of the optimal model in this paper is compared with that of the previous ideal model, the results show that under high frequency condition, the parasitic capacitance of inductance and biological capacitance considered in the optimal model could have great impact on the wireless energy transfer system. The further comparison with the experimental data verifies the validity and accuracy of the optimal model proposed in this paper. Conclusions The optimal model proposed in this paper has a higher theoretical guiding significance for the wireless energy transfer system’s further research, and provide a more precise model reference for solving the power supply problem in visual prosthesis clinical application. PMID:24428906

Aspheric surface measurement using capacitive probes

NASA Astrophysics Data System (ADS)

Tao, Xin; Yuan, Daocheng; Li, Shaobo

2017-02-01

With the application of aspheres in optical fields, high precision and high efficiency aspheric surface metrology becomes a hot research topic. We describe a novel method of non-contact measurement of aspheric surface with capacitive probe. Taking an eccentric spherical surface as the object of study, the averaging effect of capacitive probe measurement and the influence of tilting the capacitive probe on the measurement results are investigated. By comparing measurement results from simultaneous measurement of the capacitive probe and contact probe of roundness instrument, this paper indicates the feasibility of using capacitive probes to test aspheric surface and proposes the compensation method of measurement error caused by averaging effect and the tilting of the capacitive probe.

Towards long coherence superconducting qubits

NASA Astrophysics Data System (ADS)

Steffen, Matthias; Corcoles, Antonio; Chow, Jerry; Rigetti, Chad; Ketchen, Mark; Rothwell, Mary Beth; Keefe, George; Rozen, Jim; Borstelmann, Mark; Rohrs, Jack; Divincenzo, David

2011-03-01

The capacitively shunted flux qubit (CSFQ) has recently been shown to have coherence times of 1-2 microseconds repeatedly over many devices at typical qubit operating frequencies. Experiments in our group strongly suggest that losses associated with the shunting capacitor limit the current coherence times. As a result we propose novel approaches towards decreasing capacitive losses by employing geometric and/or materials developments. We show experimental data and compare these with theoretical predictions

Demonstration of a Packaged Capacitive Pressure Sensor System Suitable for Jet Turbofan Engine Health Monitoring

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Jordan, Jennifer L.; Meredith, Roger D.; Harsh, Kevin; Pilant, Evan; Usrey, Michael W.; Beheim, Glenn M.; Hunter, Gary W.; Zorman, Christian A.

2016-01-01

In this paper, the development and characterization of a packaged pressure sensor system suitable for jet engine health monitoring is demonstrated. The sensing system operates from 97 to 117 MHz over a pressure range from 0 to 350 psi and a temperature range from 25 to 500 deg. The sensing system consists of a Clapp-type oscillator that is fabricated on an alumina substrate and is comprised of a Cree SiC MESFET, MIM capacitors, a wire-wound inductor, chip resistors and a SiCN capacitive pressure sensor. The pressure sensor is located in the LC tank circuit of the oscillator so that a change in pressure causes a change in capacitance, thus changing the resonant frequency of the sensing system. The chip resistors, wire-wound inductors and MIM capacitors have all been characterized at temperature and operational frequency, and perform with less than 5% variance in electrical performance. The measured capacitive pressure sensing system agrees very well with simulated results. The packaged pressure sensing system is specifically designed to measure the pressure on a jet turbofan engine. The packaged system can be installed by way of borescope plug adaptor fitted to a borescope port exposed to the gas path of a turbofan engine.

Nitrogen-Doped Holey Graphene Film-Based Ultrafast Electrochemical Capacitors.

PubMed

Zhou, Qinqin; Zhang, Miao; Chen, Ji; Hong, Jong-Dal; Shi, Gaoquan

2016-08-17

The commercialized aluminum electrolytic capacitors (AECs) currently used for alternating current (AC) line-filtering are usually the largest components in the electronic circuits because of their low specific capacitances and bulky sizes. Herein, nitrogen-doped holey graphene (NHG) films were prepared by thermal annealing the composite films of polyvinylpyrrolidone (PVP), graphene oxide (GO), and ferric oxide (Fe2O3) nanorods followed by chemical etching with hydrochloride acid. The typical electrochemical capacitor with NHG electrodes exhibited high areal and volumetric specific capacitances of 478 μF cm(-2) and 1.2 F cm(-3) at 120 Hz, ultrafast frequency response with a phase angle of -81.2° and a resistor-capacitor time constant of 203 μs at 120 Hz, as well as excellent cycling stability. Thus, it is promising to replace conventional AEC for AC line-filtering in miniaturized electronics.

0.5 V 5.8 GHz highly linear current-reuse voltage-controlled oscillator with back-gate tuning technique

NASA Astrophysics Data System (ADS)

Ikeda, Sho; Lee, Sang-Yeop; Ito, Hiroyuki; Ishihara, Noboru; Masu, Kazuya

2015-04-01

In this paper, we present a voltage-controlled oscillator (VCO), which achieves highly linear frequency tuning under a low supply voltage of 0.5 V. To obtain the linear frequency tuning of a VCO, the high linearity of the threshold voltage of a varactor versus its back-gate voltage is utilized. This enables the linear capacitance tuning of the varactor; thus, a highly linear VCO can be achieved. In addition, to decrease the power consumption of the VCO, a current-reuse structure is employed as a cross-coupled pair. The proposed VCO was fabricated using a 65 nm Si complementary metal oxide semiconductor (CMOS) process. It shows the ratio of the maximum VCO gain (KVCO) to the minimum one to be 1.28. The dc power consumption is 0.33 mW at a supply voltage of 0.5 V. The measured phase noise at 10 MHz offset is -123 dBc/Hz at an output frequency of 5.8 GHz.

Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

NASA Astrophysics Data System (ADS)

Zhang, Xiao-Yu; Tan, Ren-Bing; Sun, Jian-Dong; Li, Xin-Xing; Zhou, Yu; Lü, Li; Qin, Hua

2015-10-01

An AlGaN/GaN high electron mobility transistor (HEMT) device is prepared by using a semiconductor nanofabrication process. A reflective radio-frequency (RF) readout circuit is designed and the HEMT device is assembled in an RF circuit through a coplanar waveguide transmission line. A gate capacitor of the HEMT and a surface-mounted inductor on the transmission line are formed to generate LC resonance. By tuning the gate voltage Vg, the variations of gate capacitance and conductance of the HEMT are reflected sensitively from the resonance frequency and the magnitude of the RF reflection signal. The aim of the designed RF readout setup is to develop a highly sensitive HEMT-based detector. Project supported by the National Natural Science Foundation of China (Grant No. 61107093), the Suzhou Science and Technology Project, China (Grant No. ZXG2012024), and the Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant No. 2012243).

Measurement of Gas-Liquid Two-Phase Flow in Micro-Pipes by a Capacitance Sensor

PubMed Central

Ji, Haifeng; Li, Huajun; Huang, Zhiyao; Wang, Baoliang; Li, Haiqing

2014-01-01

A capacitance measurement system is developed for the measurement of gas-liquid two-phase flow in glass micro-pipes with inner diameters of 3.96, 2.65 and 1.56 mm, respectively. As a typical flow regime in a micro-pipe two-phase flow system, slug flow is chosen for this investigation. A capacitance sensor is designed and a high-resolution and high-speed capacitance measurement circuit is used to measure the small capacitance signals based on the differential sampling method. The performance and feasibility of the capacitance method are investigated and discussed. The capacitance signal is analyzed, which can reflect the voidage variation of two-phase flow. The gas slug velocity is determined through a cross-correlation technique using two identical capacitance sensors. The simulation and experimental results show that the presented capacitance measurement system is successful. Research work also verifies that the capacitance sensor is an effective method for the measurement of gas liquid two-phase flow parameters in micro-pipes. PMID:25587879

Measurement of gas-liquid two-phase flow in micro-pipes by a capacitance sensor.

PubMed

Ji, Haifeng; Li, Huajun; Huang, Zhiyao; Wang, Baoliang; Li, Haiqing

2014-11-26

A capacitance measurement system is developed for the measurement of gas-liquid two-phase flow in glass micro-pipes with inner diameters of 3.96, 2.65 and 1.56 mm, respectively. As a typical flow regime in a micro-pipe two-phase flow system, slug flow is chosen for this investigation. A capacitance sensor is designed and a high-resolution and high-speed capacitance measurement circuit is used to measure the small capacitance signals based on the differential sampling method. The performance and feasibility of the capacitance method are investigated and discussed. The capacitance signal is analyzed, which can reflect the voidage variation of two-phase flow. The gas slug velocity is determined through a cross-correlation technique using two identical capacitance sensors. The simulation and experimental results show that the presented capacitance measurement system is successful. Research work also verifies that the capacitance sensor is an effective method for the measurement of gas liquid two-phase flow parameters in micro-pipes.

Apparatus and methods of measuring minority carrier lifetime using a liquid probe

DOEpatents

Li, Jian

2016-04-12

Methods and apparatus for measuring minority carrier lifetimes using liquid probes are provided. In one embodiment, a method of measuring the minority carrier lifetime of a semiconductor material comprises: providing a semiconductor material having a surface; forming a rectifying junction at a first location on the surface by temporarily contacting the surface with a conductive liquid probe; electrically coupling a second junction to the semiconductor material at a second location, wherein the first location and the second location are physically separated; applying a forward bias to the rectifying junction causing minority carrier injection in the semiconductor material; measuring a total capacitance as a function of frequency between the rectifying junction and the second junction; determining an inflection frequency of the total capacitance; and determining a minority lifetime of the semiconductor material from the inflection frequency.

TIME CALIBRATED OSCILLOSCOPE SWEEP CIRCUIT

DOEpatents

Smith, V.L.; Carstensen, H.K.

1959-11-24

An improved time calibrated sweep circuit is presented, which extends the range of usefulness of conventional oscilloscopes as utilized for time calibrated display applications in accordance with U. S. Patent No. 2,832,002. Principal novelty resides in the provision of a pair of separate signal paths, each of which is phase and amplitude adjustable, to connect a high-frequency calibration oscillator to the output of a sawtooth generator also connected to the respective horizontal deflection plates of an oscilloscope cathode ray tube. The amplitude and phase of the calibration oscillator signals in the two signal paths are adjusted to balance out feedthrough currents capacitively coupled at high frequencies of the calibration oscillator from each horizontal deflection plate to the vertical plates of the cathode ray tube.

Tolerance of low-frequency ultrasound sonophoresis: a double-blind randomized study on humans.

PubMed

Maruani, Annabel; Vierron, Emilie; Machet, Laurent; Giraudeau, Bruno; Halimi, Jean-Michel; Boucaud, Alain

2012-05-01

Sonophoresis [low-frequency ultrasound (US)] has been used in animals and in vitro to investigate enhanced percutaneous absorption of drugs. No study focused on its clinical human tolerance has been published as yet. We aimed to assess the bioeffects of low-frequency US in vivo on human skin in a double-blind randomized-controlled study. We applied pulse-mode US at 36 kHz for 5 min in a step procedure of increasing dosage, from 1.57 to 3.50 W/cm(2), and placebo. The primary outcome was toxic effects of the procedure, defined as a pain score >40 on a 0-100 mm visual analogue scale or necrosis. Erythema (scored from 0 to 3 in severity) was also evaluated. The secondary outcomes were measurements of skin thickness by high-resolution skin imaging, of skin capacitance and temperature. We included 34 healthy volunteers. We found no pain score >38 and no skin necrosis with either US or placebo. Erythema was systematically observed immediately after US application, but after 1 day, we observed three cases in the knee group. The most frequent adverse effect was tinnitus. We observed no marked increase in temperature or cutaneous thickness after US or placebo. Cutaneous capacitance increased immediately after both applications. Such data demonstrating good tolerance of sonophoresis can be useful before the initiation of a clinical trial of the therapeutic use of low-frequency sonophoresis in humans. © 2011 John Wiley & Sons A/S.

Real-Time Remote Monitoring of Temperature and Humidity Within a Proton Exchange Membrane Fuel Cell Using Flexible Sensors

PubMed Central

Kuo, Long-Sheng; Huang, Hao-Hsiu; Yang, Cheng-Hao; Chen, Ping-Hei

2011-01-01

This study developed portable, non-invasive flexible humidity and temperature microsensors and an in situ wireless sensing system for a proton exchange membrane fuel cell (PEMFC). The system integrated three parts: a flexible capacitive humidity microsensor, a flexible resistive temperature microsensor, and a radio frequency (RF) module for signal transmission. The results show that the capacitive humidity microsensor has a high sensitivity of 0.83 pF%RH−1 and the resistive temperature microsensor also exhibits a high sensitivity of 2.94 × 10−3 °C−1. The established RF module transmits the signals from the two microsensors. The transmission distance can reach 4 m and the response time is less than 0.25 s. The performance measurements demonstrate that the maximum power density of the fuel cell with and without these microsensors are 14.76 mW·cm−2 and 15.90 mW·cm−2, with only 7.17% power loss. PMID:22164099

Self-Nulling Lock-in Detection Electronics for Capacitance Probe Electrometer

NASA Technical Reports Server (NTRS)

Blaes, Brent R.; Schaefer, Rembrandt T.

2012-01-01

A multi-channel electrometer voltmeter that employs self-nulling lock-in detection electronics in conjunction with a mechanical resonator with noncontact voltage sensing electrodes has been developed for space-based measurement of an Internal Electrostatic Discharge Monitor (IESDM). The IESDM is new sensor technology targeted for integration into a Space Environmental Monitor (SEM) subsystem used for the characterization and monitoring of deep dielectric charging on spacecraft. Use of an AC-coupled lock-in amplifier with closed-loop sense-signal nulling via generation of an active guard-driving feedback voltage provides the resolution, accuracy, linearity and stability needed for long-term space-based measurement of the IESDM. This implementation relies on adjusting the feedback voltage to drive the sense current received from the resonator s variable-capacitance-probe voltage transducer to approximately zero, as limited by the signal-to-noise performance of the loop electronics. The magnitude of the sense current is proportional to the difference between the input voltage being measured and the feedback voltage, which matches the input voltage when the sense current is zero. High signal-to-noise-ratio (SNR) is achieved by synchronous detection of the sense signal using the correlated reference signal derived from the oscillator circuit that drives the mechanical resonator. The magnitude of the feedback voltage, while the loop is in a settled state with essentially zero sense current, is an accurate estimate of the input voltage being measured. This technique has many beneficial attributes including immunity to drift, high linearity, high SNR from synchronous detection of a single-frequency carrier selected to avoid potentially noisy 1/f low-frequency spectrum of the signal-chain electronics, and high accuracy provided through the benefits of a driven shield encasing the capacitance- probe transducer and guarded input triaxial lead-in. Measurements obtained from a 2- channel prototype electrometer have demonstrated good accuracy (|error| < 0.2 V) and high stability. Twenty-four-hour tests have been performed with virtually no drift. Additionally, 5,500 repeated one-second measurements of 100 V input were shown to be approximately normally distributed with a standard deviation of 140 mV.

Micromechanical Disk Array for Enhanced Frequency Stability Against Bias Voltage Fluctuations

DTIC Science & Technology

2014-11-20

already made inroads into the low-end timing market , and research devices have been reported to satisfy GSM phase noise requirements while only...resonators have already made inroads into the low-end timing market , and research devices have been reported to satisfy GSM phase noise requirements...Notably oscillators referenced to very high Q capacitive-gap transduced MEMS resonators have already made inroads into the low-end timing market , and

Self-Aligned, Extremely High Frequency III-V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates

DTIC Science & Technology

2012-06-29

resistances, respectively, and gd is the output conductance. The reduced parasitic capacitances and resistances provided by the self-aligned T-gate design ...Department of the Army position, policy or decision, unless so designated by other documentation. 12. DISTRIBUTION AVAILIBILITY STATEMENT Approved for...position, policy or decision, unless so designated by other documentation. Approved for public release; distribution is unlimited. ... 59654.5-MS-DRP Self

Plasma characteristics in an electrically asymmetric capacitive discharge sustained by multiple harmonics: operating in the very high frequency regime

NASA Astrophysics Data System (ADS)

Zhang, Yu-Ru; Hu, Yan-Ting; Gao, Fei; Song, Yuan-Hong; Wang, You-Nian

2018-05-01

A novel method, the so-called electrical asymmetry effect (EAE), is gaining increasing interest for realizing the separate control of the ion flux and ion energy. In this paper, a two-dimensional fluid model combined with the full set of Maxwell equations is used to investigate the plasma properties in an electrically asymmetric capacitive discharge sustained by multiple consecutive harmonics operating in the very high frequency regime. The results indicate that by increasing the total number of consecutive harmonics k, the modulation of the dc self-bias induced by changing {θ }1 (the relative phase of the fundamental frequency) becomes different, especially for k ≤slant 6. In a discharge driven by eight consecutive harmonics, the dc self-bias varies with a period 2π, and the most positive value appears at {θ }1 = 3π/2. In addition, with the electromagnetic effects taken into account, the plasma density shifts from edge-high to uniform when {θ }1 increases from 0 to π, and the maximum moves again towards the radial wall at {θ }1 = 3π/2. Moreover, the transient behavior of electrodynamics is also important for a better understanding of the EAE. Within a period, three positive peaks of {P}z are observed, which cause substantial ionization at similar places. {P}r is characterized by a pronounced peak at the end of the period, and the lowest peak value appears at {θ }1 = π. The results obtained in this work are important for improving the plasma processes by utilizing the EAE, especially when the higher order harmonics are included.

Numerical correction of the phase error due to electromagnetic coupling effects in 1D EIT borehole measurements

NASA Astrophysics Data System (ADS)

Zhao, Y.; Zimmermann, E.; Huisman, J. A.; Treichel, A.; Wolters, B.; van Waasen, S.; Kemna, A.

2012-12-01

Spectral Electrical Impedance Tomography (EIT) allows obtaining images of the complex electrical conductivity for a broad frequency range (mHz to kHz). It has recently received increased interest in the field of near-surface geophysics and hydrogeophysics because of the relationships between complex electrical properties and hydrogeological and biogeochemical properties and processes observed in the laboratory with Spectral Induced Polarization (SIP). However, these laboratory results have also indicated that a high phase accuracy is required for surface and borehole EIT measurements because many soils and sediments are only weakly polarizable and show phase angles between 1 and 20 mrad. In the case of borehole EIT measurements, long cables and electrode chains (>10 meters) are typically used, which leads to undesired inductive coupling between the electric loops for current injection and potential measurement and capacitive coupling between the electrically conductive cable shielding and the soil. Depending on the electrical properties of the subsurface and the measured transfer impedances, both coupling effects can cause large phase errors that have typically limited the frequency bandwidth of field EIT measurement to the mHz to Hz range. The aim of this study is i) to develop correction procedures for these coupling effects to extend the applicability of EIT to the kHz range and ii) to validate these corrections using controlled laboratory measurements and field measurements. In order to do so, the inductive coupling effect was modeled using electronic circuit models and the capacitive coupling effect was modeled by integrating discrete capacitances in the electrical forward model describing the EIT measurement process. The correction methods were successfully verified with measurements under controlled conditions in a water-filled rain barrel, where a high phase accuracy of 2 mrad in the frequency range up to 10 kHz was achieved. In a field demonstration using a 25 m borehole chain with 8 electrodes with 1 m electrode separation, the corrections were also applied within a 1D inversion of the borehole EIT measurements. The results show that the correction methods increased the measurement accuracy considerably.

Observation of non-linear biomass-capacitance correlations: reasons and implications for bioprocess control.

PubMed

Maskow, Thomas; Röllich, Anita; Fetzer, Ingo; Yao, Jun; Harms, Hauke

2008-09-15

Electrical capacitance has been discussed as a real time measure for living biomass concentration in technical bioreactors such as brewery (fermentation) tanks. Commonly, a linear correlation between biomass concentration and capacitance is assumed. While following the growth and subsequent lipid formation of the yeast Arxula adeninivorans we observed non-linearity between biomass concentration and capacitance. Capacitance deviation from linearity coincided with incipient lipid formation and depended on the intracellular lipid content. As the extent of deviation between capacitance and biomass concentration was proportional to the lipid concentration, it was considered as a quantitative measure of intracellular product formation. The correlation between shifts in dielectric relaxation (summarized as characteristic frequency of the Cole-Cole equation) and lipid content could not be explained by interfacial polarization on the lipid droplets alone. However, the parameters of the Cole-Cole equation were found to be a clear indicator for different phases of growth and lipid production. Integrating all results in a redundancy analysis (RDA), we were able to accurately describe the formation of cellular lipid inclusions. Our measurements are thus potentially valuable as components of future bioprocess control strategies targeting intracellular products such as proteins or biopolyesters.

Transport conductivity of graphene at RF and microwave frequencies

NASA Astrophysics Data System (ADS)

Awan, S. A.; Lombardo, A.; Colli, A.; Privitera, G.; Kulmala, T. S.; Kivioja, J. M.; Koshino, M.; Ferrari, A. C.

2016-03-01

We measure graphene coplanar waveguides from direct current (DC) to a frequency f = 13.5 GHz and show that the apparent resistance (in the presence of parasitic impedances) has an {ω }2 dependence (where ω =2π f), but the intrinsic conductivity (without the influence of parasitic impedances) is frequency-independent. Consequently, in our devices the real part of the complex alternating current (AC) conductivity is the same as the DC value and the imaginary part is ˜0. The graphene channel is modeled as a parallel resistive-capacitive network with a frequency dependence identical to that of the Drude conductivity with momentum relaxation time ˜2.1 ps, highlighting the influence of AC electron transport on the electromagnetic properties of graphene. This can lead to optimized design of high-speed analog field-effect transistors, mixers, frequency doublers, low-noise amplifiers and radiation detectors.

Trielectrode capacitive pressure transducer

NASA Technical Reports Server (NTRS)

Coon, G. W. (Inventor)

1976-01-01

A capacitive transducer and circuit especially suited for making measurements in a high-temperature environment are described. The transducer includes two capacitive electrodes and a shield electrode. As the temperature of the transducer rises, the resistance of the insulation between the capacitive electrode decreases and a resistive current attempts to interfere with the capacitive current between the capacitive electrodes. The shield electrode and the circuit coupled there reduce the resistive current in the transducer. A bridge-type circuit coupled to the transducer ignores the resistive current and measures only the capacitive current flowing between the capacitive electrodes.

Electrical Capacitance Volume Tomography for the Packed Bed Reactor ISS Flight Experiment

NASA Technical Reports Server (NTRS)

Marashdeh, Qussai; Motil, Brian; Wang, Aining; Liang-Shih, Fan

2013-01-01

Fixed packed bed reactors are compact, require minimum power and maintenance to operate, and are highly reliable. These features make this technology a highly desirable unit operation for long duration life support systems in space. NASA is developing an ISS experiment to address this technology with particular focus on water reclamation and air revitalization. Earlier research and development efforts funded by NASA have resulted in two hydrodynamic models which require validation with appropriate instrumentation in an extended microgravity environment. To validate these models, the instantaneous distribution of the gas and liquid phases must be measured.Electrical Capacitance Volume Tomography (ECVT) is a non-invasive imaging technology recently developed for multi-phase flow applications. It is based on distributing flexible capacitance plates on the peripheral of a flow column and collecting real-time measurements of inter-electrode capacitances. Capacitance measurements here are directly related to dielectric constant distribution, a physical property that is also related to material distribution in the imaging domain. Reconstruction algorithms are employed to map volume images of dielectric distribution in the imaging domain, which is in turn related to phase distribution. ECVT is suitable for imaging interacting materials of different dielectric constants, typical in multi-phase flow systems. ECVT is being used extensively for measuring flow variables in various gas-liquid and gas-solid flow systems. Recent application of ECVT include flows in risers and exit regions of circulating fluidized beds, gas-liquid and gas-solid bubble columns, trickle beds, and slurry bubble columns. ECVT is also used to validate flow models and CFD simulations. The technology is uniquely qualified for imaging phase concentrations in packed bed reactors for the ISS flight experiments as it exhibits favorable features of compact size, low profile sensors, high imaging speed, and flexibility to fit around columns of various shapes and sizes. ECVT is also safer than other commonly used imaging modalities as it operates in the range of low frequencies (1 MHz) and does not radiate radioactive energy. In this effort, ECVT is being used to image flow parameters in a packed bed reactor for an ISS flight experiment.

Parametric Phase-Sensitive Detector Using Two-cell SQUID

DTIC Science & Technology

2010-08-01

an attenuator of -20 dB. The microwave was fed into the coplanar resonator by a coplanar capacitance of 9 fF, and corresponding response was coupled...transmission line between the two coupled coplanar capacitances . With a network analyzer, the resonant frequency was confirmed to be 8.985 GHz and the...microwave directional sensors based on two-cell SQUIDs. Two SQUID circuits with different values of McCumber parameter βc have been tested. Observed

A capacitive ultrasonic transducer based on parametric resonance.

PubMed

Surappa, Sushruta; Satir, Sarp; Levent Degertekin, F

2017-07-24

A capacitive ultrasonic transducer based on a parametric resonator structure is described and experimentally demonstrated. The transducer structure, which we call capacitive parametric ultrasonic transducer (CPUT), uses a parallel plate capacitor with a movable membrane as part of a degenerate parametric series RLC resonator circuit with a resonance frequency of f o . When the capacitor plate is driven with an incident harmonic ultrasonic wave at the pump frequency of 2f o with sufficient amplitude, the RLC circuit becomes unstable and ultrasonic energy can be efficiently converted to an electrical signal at f o frequency in the RLC circuit. An important characteristic of the CPUT is that unlike other electrostatic transducers, it does not require DC bias or permanent charging to be used as a receiver. We describe the operation of the CPUT using an analytical model and numerical simulations, which shows drive amplitude dependent operation regimes including parametric resonance when a certain threshold is exceeded. We verify these predictions by experiments with a micromachined membrane based capacitor structure in immersion where ultrasonic waves incident at 4.28 MHz parametrically drive a signal with significant amplitude in the 2.14 MHz RLC circuit. With its unique features, the CPUT can be particularly advantageous for applications such as wireless power transfer for biomedical implants and acoustic sensing.

A critical analysis of single-frequency LCR databridge impedance measurements of human skin.

PubMed

White, Erick A; Orazem, Mark E; Bunge, Annette L

2011-06-01

Testing whether the barrier of skin samples has sufficient integrity for meaningful measurements of in-vitro chemical permeability is usually required when data are generated for regulatory purposes. Recently, skin integrity has been assessed using LCR databridge measurements, which are reported as resistances determined in either series (SER) or parallel (PAR) modes at a single frequency, typically 100 or 1000Hz. Measurements made at different combinations of mode and frequency are known to differ, although the skin literature reveals confusion over the meaning of these differences and the impact on the interpretation of integrity test results. Here, the theoretical meanings of resistance and capacitance measurements in PAR and SER mode are described and confirmed experimentally. SER-mode resistances are equal to the real part of the complex impedance; whereas, PAR-mode resistances are the inverse of the real part of the admittance. Capacitance measurements reported in SER and PAR modes are similar manipulations of the imaginary parts of the complex impedance and admittance. A large body of data from human cadaver skin is used to show that the PAR-mode resistance and SER-mode capacitance measured at 100Hz are sensitive to skin resistivity, which is the electrical measurement most closely related to skin integrity. Copyright © 2011 Elsevier Ltd. All rights reserved.

Diagnostic of capacitively coupled radio frequency plasma from electrical discharge characteristics: comparison with optical emission spectroscopy and fluid model simulation

NASA Astrophysics Data System (ADS)

Xiang, HE; Chong, LIU; Yachun, ZHANG; Jianping, CHEN; Yudong, CHEN; Xiaojun, ZENG; Bingyan, CHEN; Jiaxin, PANG; Yibing, WANG

2018-02-01

The capacitively coupled radio frequency (CCRF) plasma has been widely used in various fields. In some cases, it requires us to estimate the range of key plasma parameters simpler and quicker in order to understand the behavior in plasma. In this paper, a glass vacuum chamber and a pair of plate electrodes were designed and fabricated, using 13.56 MHz radio frequency (RF) discharge technology to ionize the working gas of Ar. This discharge was mathematically described with equivalent circuit model. The discharge voltage and current of the plasma were measured at different pressures and different powers. Based on the capacitively coupled homogeneous discharge model, the equivalent circuit and the analytical formula were established. The plasma density and temperature were calculated by using the equivalent impedance principle and energy balance equation. The experimental results show that when RF discharge power is 50-300 W and pressure is 25-250 Pa, the average electron temperature is about 1.7-2.1 eV and the average electron density is about 0.5 × 1017-3.6 × 1017 m-3. Agreement was found when the results were compared to those given by optical emission spectroscopy and COMSOL simulation.

Contribution of crosstalk to the uncertainty of electrostatic actuator calibrations.

PubMed

Shams, Qamar A; Soto, Hector L; Zuckerwar, Allan J

2009-09-01

Crosstalk in electrostatic actuator calibrations is defined as the ratio of the microphone response to the actuator excitation voltage at a given frequency with the actuator polarization voltage turned off to the response, at the excitation frequency, with the polarization voltage turned on. It consequently contributes to the uncertainty of electrostatic actuator calibrations. Two sources of crosstalk are analyzed: the first attributed to the stray capacitance between the actuator electrode and the microphone backplate, and the second to the ground resistance appearing as a common element in the actuator excitation and microphone input loops. Measurements conducted on 1/4, 1/2, and 1 in. air condenser microphones reveal that the crosstalk has no frequency dependence up to the membrane resonance frequency and that the level of crosstalk lies at about -60 dB for all three microphones-conclusions that are consistent with theory. The measurements support the stray capacitance model. The contribution of crosstalk to the measurement standard uncertainty of an electrostatic actuator calibration is therewith 0.01 dB.

High energy overcurrent protective device

DOEpatents

Praeg, Walter F.

1982-01-01

Electrical loads connected to capacitance elements in high voltage direct current systems are protected from damage by capacitance discharge overcurrents by connecting between the capacitance element and the load, a longitudinal inductor comprising a bifilar winding wound about a magnetic core, which forms an incomplete magnetic circuit. A diode is connected across a portion of the bifilar winding which conducts a unidirectional current only. Energy discharged from the capacitance element is stored in the inductor and then dissipated in an L-R circuit including the diode and the coil winding. Multiple high voltage circuits having capacitance elements may be connected to loads through bifilar windings all wound about the aforementioned magnetic core.

Resonant ultrasound spectrometer

DOEpatents

Migliori, Albert; Visscher, William M.; Fisk, Zachary

1990-01-01

An ultrasound resonant spectrometer determines the resonant frequency spectrum of a rectangular parallelepiped sample of a high dissipation material over an expected resonant response frequency range. A sample holder structure grips corners of the sample between piezoelectric drive and receive transducers. Each transducer is mounted on a membrane for only weakly coupling the transducer to the holder structure and operatively contacts a material effective to remove system resonant responses at the transducer from the expected response range. i.e., either a material such as diamond to move the response frequencies above the range or a damping powder to preclude response within the range. A square-law detector amplifier receives the response signal and retransmits the signal on an isolated shield of connecting cabling to remove cabling capacitive effects. The amplifier also provides a substantially frequency independently voltage divider with the receive transducer. The spectrometer is extremely sensitive to enable low amplitude resonance to be detected for use in calculating the elastic constants of the high dissipation sample.

Fabrication of (NH4)2S passivated GaAs metal-insulator-semiconductor devices using low-frequency plasma-enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Jaouad, A.; Aimez, V.; Aktik, Ç.; Bellatreche, K.; Souifi, A.

2004-05-01

Metal-insulator-semiconductor (MIS) capacitors were fabricated on n-GaAs(100) substrate using (NH4)2S surface passivation and low-frequency plasma-enhanced chemical vapor deposited silicon nitride as gate insulators. The electrical properties of the fabricated MIS capacitors were analyzed using high-frequency capacitance-voltage and conductance-voltage measurements. The high concentration of hydrogen present during low-frequency plasma deposition of silicon nitride enhances the passivation of GaAs surface, leading to the unpinning of the Fermi level and to a good modulation of the surface potential by gate voltage. The electrical properties of the insulator-semiconductor interface are improved after annealing at 450 °C for 60 s, as a significant reduction of the interface fixed charges and of the interface states density is put into evidence. The minimum interface states density was found to be about 3×1011 cm-2 eV-1, as estimated by the Terman method. .

High frequency electroporation efficiency is under control of membrane capacitive charging and voltage potential relaxation.

PubMed

Novickij, Vitalij; Ruzgys, Paulius; Grainys, Audrius; Šatkauskas, Saulius

2018-02-01

The study presents the proof of concept for a possibility to achieve a better electroporation in the MHz pulse repetition frequency (PRF) region compared to the conventional low frequency protocols. The 200ns×10 pulses bursts of 10-14kV/cm have been used to permeabilize Chinese hamster ovary (CHO) cells in a wide range (1Hz-1MHz) of PRF. The permeabilization efficiency was evaluated using fluorescent dye assay (propidium iodide) and flow cytometry. It was determined that a threshold PRF exists when the relaxation of the cell transmembrane potential is longer than the delay between the consequent pulses, which results in accumulation of the charge on the membrane. For the CHO cells and 0.1S/m electroporation medium, this phenomenon is detectable in the 0.5-1MHz range. It was shown that the PRF is an important parameter that could be used for flexible control of electroporation efficiency in the high frequency range. Copyright © 2017 Elsevier B.V. All rights reserved.

Estimation of carrier mobility and charge behaviors of organic semiconductor films in metal-insulator-semiconductor diodes consisting of high-k oxide/organic semiconductor double layers

NASA Astrophysics Data System (ADS)

Chosei, Naoya; Itoh, Eiji

2018-02-01

We have comparatively studied the charge behaviors of organic semiconductor films based on charge extraction by linearly increasing voltage in a metal-insulator-semiconductor (MIS) diode structure (MIS-CELIV) and by classical capacitance-voltage measurement. The MIS-CELIV technique allows the selective measurement of electron and hole mobilities of n- and p-type organic films with thicknesses representative of those of actual devices. We used an anodic oxidized sputtered Ta or Hf electrode as a high-k layer, and it effectively blocked holes at the insulator/semiconductor interface. We estimated the hole mobilities of the polythiophene derivatives regioregular poly(3-hexylthiophene) (P3HT) and poly(3,3‧‧‧-didodecylquarterthiophene) (PQT-12) before and after heat treatment in the ITO/high-k/(thin polymer insulator)/semiconductor/MoO3/Ag device structure. The hole mobility of PQT-12 was improved from 1.1 × 10-5 to 2.1 × 10-5 cm2 V-1 s-1 by the heat treatment of the device at 100 °C for 30 min. An almost two orders of magnitude higher mobility was obtained in MIS diodes with P3HT as the p-type layer. We also determined the capacitance from the displacement current in MIS diodes at a relatively low-voltage sweep, and it corresponded well to the classical capacitance-voltage and frequency measurement results.

Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vais, Abhitosh, E-mail: Abhitosh.Vais@imec.be; Martens, Koen; DeMeyer, Kristin

2015-08-03

This paper presents a detailed investigation of the temperature dependence of frequency dispersion observed in capacitance-voltage (C-V) measurements of III-V metal-oxide-semiconductor (MOS) devices. The dispersion in the accumulation region of the capacitance data is found to change from 4%–9% (per decade frequency) to ∼0% when the temperature is reduced from 300 K to 4 K in a wide range of MOS capacitors with different gate dielectrics and III-V substrates. We show that such significant temperature dependence of C-V frequency dispersion cannot be due to the temperature dependence of channel electrostatics, i.e., carrier density and surface potential. We also show that the temperaturemore » dependence of frequency dispersion, and hence, the capture/emission process of border traps can be modeled by a combination of tunneling and a “temperature-activated” process described by a non-radiative multi-phonon model, instead of a widely believed single-step elastic tunneling process.« less

Double-driven shield capacitive type proximity sensor

NASA Technical Reports Server (NTRS)

Vranish, John M. (Inventor)

1993-01-01

A capacity type proximity sensor comprised of a capacitance type sensor, a capacitance type reference, and two independent and mutually opposing driven shields respectively adjacent to the sensor and reference and which are coupled in an electrical bridge circuit configuration and driven by a single frequency crystal controlled oscillator is presented. The bridge circuit additionally includes a pair of fixed electrical impedance elements which form adjacent arms of the bridge and which comprise either a pair of precision resistances or capacitors. Detection of bridge unbalance provides an indication of the mutual proximity between an object and the sensor. Drift compensation is also utilized to improve performance and thus increase sensor range and sensitivity.

Moisture content measurement in paddy

NASA Astrophysics Data System (ADS)

Klomklao, P.; Kuntinugunetanon, S.; Wongkokua, W.

2017-09-01

Moisture content is an important quantity for agriculture product, especially in paddy. In principle, the moisture content can be measured by a gravimetric method which is a direct method. However, the gravimetric method is time-consuming. There are indirect methods such as resistance and capacitance methods. In this work, we developed an indirect method based on a 555 integrated circuit timer. The moisture content sensor was capacitive parallel plates using the dielectric constant property of the moisture. The instrument generated the output frequency that depended on the capacitance of the sensor. We fitted a linear relation between periods and moisture contents. The measurement results have a standard uncertainty of 1.23 % of the moisture content in the range of 14 % to 20 %.

Electrically Small Folded Slot Antenna Utilizing Capacitive Loaded Slot Lines

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Ponchak, George E.; Merritt, Shane; Minor, John S.; Zorman, Christian A.

2007-01-01

This paper presents an electrically small, coplanar waveguide fed, folded slot antenna that uses capacitive loading. Several antennas are fabricated with and without capacitive loading to demonstrate the ability of this design approach to reduce the resonant frequency of the antenna, which is analogous to reducing the antenna size. The antennas are fabricated on Cu-clad Rogers Duriod(TM) 6006 with multilayer chip capacitors to load the antennas. Simulated and measured results show close agreement, thus, validating the approach. The electrically small antennas have a measured return loss greater than 15 dB and a gain of 5.4, 5.6, and 2.7 dBi at 4.3, 3.95, and 3.65 GHz, respectively.

Silicon Carbide Capacitive High Temperature MEMS Strain Transducer

DTIC Science & Technology

2012-03-22

SILICON CARBIDE CAPACITIVE HIGH TEMPURATURE MEMS STRAIN TRANSDUCER THESIS Richard P. Weisenberger, DR01, USAF AFIT/GE/ENG...declared a work of the U.S. Government and is not subject to copyright protection in the United States AFIT/GE/ENG/12-43 SILICON CARBIDE CAPACITIVE...STATEMENT A. APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED AFIT/GE/ENG/12-43 SILICON CARBIDE CAPACITIVE IDGH TEMPURATURE MEMS STRAIN TRANSDUCER

Electrical and optical characterizations of InAs/GaAs quantum dot solar cells

NASA Astrophysics Data System (ADS)

Han, Im Sik; Kim, Seung Hyun; Kim, Jong Su; Noh, Sam Kyu; Lee, Sang Jun; Kim, Honggyun; Kim, Deok-Kee; Leem, Jae-Young

2018-03-01

The electrical and optical characterizations of InAs/GaAs quantum dot solar cells (QDSCs) were investigated by frequency dependent capacitance-voltage ( C- V) measurements and photoreflectance (PR) spectroscopy. The C- V results confirmed that the frequency dependent junction capacitance ( C j) of QDSC is sensitive to the carrier exhaustion process through trapping and recapturing in the strain-induced defects and QD states caused by the interface strain between InAs and GaAs materials. As a result, at a low frequency (≤ 200 kHz), the C j of the QDSCs decreased with increasing InAs deposition thickness ( θ), leading to the decrease in carrier concentration ( N d) of the n-GaAs absorber layer due to the carrier losses processes caused by the trapping and re-capturing in the defects and the relatively large QDs. At θ ≤ 2.0 ML, the p-n junction electric field strength ( F pn) of the QDSCs which was evaluated by PR spectra decreased with increasing excitation photon intensity ( I ex) due to the typical field screening effect in the SC structure. On the other hand, the F pn of QDSCs with θ ≥ 2.5 ML approached a constant value with a relatively high I ex, which suggests that the decrease in photo-generated carriers in the QDSC was caused by the re-capturing and trapping process.

Nonlinear dielectric properties of planar structures based on ferroelectric betaine phosphite films

NASA Astrophysics Data System (ADS)

Balashova, E. V.; Krichevtsov, B. B.; Svinarev, F. B.; Yurko, E. I.

2014-02-01

Ferroelectric films of partly deuterated betaine phosphite are grown on NdGaO3(001) substrates with an interdigitated system of electrodes on their surfaces by evaporation at room temperature. These films have a high capacitance in the ferroelectric phase transition range. The dielectric nonlinearity of the grown structures is studied in small-signal and strong-signal response modes and in the intermediate region between these two modes by measuring the capacitance in a dc bias field, dielectric hysteresis loops, and the Fourier spectra of an output signal in the Sawyer-Tower circuit. In the phase transition range, the capacitance control ratio at a bias voltage U bias = 40 V is K ≅ 7. The dielectric nonlinearity of the structures in the paraelectric phase is described by the Landau theory of second-order phase transitions. The additional contribution to the nonlinearity in the ferroelectric phase is related to the motion of domain walls and manifests itself when the input signal amplitude is higher than U st ˜ 0.7-1.0 V. The relaxation times of domain walls are determined from an analysis of the frequency dependences of the dielectric hysteresis.

Humidity effect on organic semiconductor NiPc films deposited at different gravity conditions

NASA Astrophysics Data System (ADS)

Fatima, N.; Ahmed, M. M.; Karimov, Kh. S.; Ahmedov, Kh.

2016-08-01

In this study, thin films of Nickel Phthalocyanine (NiPc) were deposited by centrifugation at high gravity (70g), and also at normal gravity (1g) conditions to fabricate humidity sensors. Ceramic alumina sheet, coated with silver electrodes, having interelectrode distance of 0.2l mm were used to assess the electrical properties of the sensors. Room temperature capacitance and impedance variations were measured as a function of relative humidity ranging from 25% ∼⃒ 95% at 1 kHz frequency. It was observed that sensors fabricated at 70g were more sensitive compared to sensors fabricated at 1g. Sensors fabricated at 70g exhibited 1.8 times decrease in their impedance and1.5 times increase in their capacitance at peak ambient humidity. SEM images showed more roughness for the films deposited at 70g compared to films deposited at 1g. It was assumed that surface irregularities might have increased active surface area of 70g sensors hence changed the electrical response. Impedance-humidity and capacitance-humidity relationships were modeled and a good agreement was observed between experimental and modeled data. Experimental data showed that NiPc films could be useful for instrumentation industry to fabricate organic humidity sensors.

Passive wireless strain monitoring of tire using capacitance change

NASA Astrophysics Data System (ADS)

Matsuzaki, Ryosuke; Todoroki, Akira

2004-07-01

In-service strain monitoring of tires of automobile is quite effective for improving the reliability of tires and Anti-lock Braking System (ABS). Since conventional strain gages have high stiffness and require lead wires, the conventional strain gages are cumbersome for the strain measurements of the tires. In a previous study, the authors proposed a new wireless strain monitoring method that adopts the tire itself as a sensor, with an oscillating circuit. This method is very simple and useful, but it requires a battery to activate the oscillating circuit. In the present study, the previous method for wireless tire monitoring is improved to produce a passive wireless sensor. A specimen made from a commercially available tire is connected to a tuning circuit comprising an inductance and a capacitance as a condenser. The capacitance change of tire causes change of the tuning frequency. This change of the tuned radio wave enables us to measure the applied strain of the specimen wirelessly, without any power supply from outside. This new passive wireless method is applied to a specimen and the static applied strain is measured. As a result, the method is experimentally shown to be effective as a passive wireless strain monitoring of tires.

Performance analysis of InGaAs/GaAsP heterojunction double gate tunnel field effect transistor

NASA Astrophysics Data System (ADS)

Ahish, S.; Sharma, Dheeraj; Vasantha, M. H.; Kumar, Y. B. N.

2017-03-01

In this paper, analog/RF performance of InGaAs/GaAsP heterojunction double gate tunnel field effect transistor (HJTFET) has been explored. A highly doped n+ layer is placed at the Source-Channel junction in order to improve the horizontal electric field component and thus, improve the realiability of the device. The analog performance of the device is analysed by extracting current-voltage characteristics, transcondutance (gm), gate-to-drain capacitance (Cgd) and gate-to-source capacitance (Cgs). Further, RF performance of the device is evaluated by obtaining cut-off frequency (fT) and Gain Bandwidth (GBW) product. ION /IOFF ratio equal to ≈ 109, subthreshold slope of 27 mV/dec, maximum fT of 2.1 THz and maximum GBW of 484 GHz were achieved. Also, the impact of temperature variation on the linearity performance of the device has been investigated. Furthermore, the circuit level performance of the device is performed by implementing a Common Source (CS) amplifier; maximum gain of 31.11 dB and 3-dB cut-off frequency equal to 91.2 GHz were achieved for load resistance (RL) = 17.5 KΩ.

Adaptive vibration suppression system: an iterative control law for a piezoelectric actuator shunted by a negative capacitor.

PubMed

Kodejska, Milos; Mokry, Pavel; Linhart, Vaclav; Vaclavik, Jan; Sluka, Tomas

2012-12-01

An adaptive system for the suppression of vibration transmission using a single piezoelectric actuator shunted by a negative capacitance circuit is presented. It is known that by using a negative-capacitance shunt, the spring constant of a piezoelectric actuator can be controlled to extreme values of zero or infinity. Because the value of spring constant controls a force transmitted through an elastic element, it is possible to achieve a reduction of transmissibility of vibrations through the use of a piezoelectric actuator by reducing its effective spring constant. Narrow frequency range and broad frequency range vibration isolation systems are analyzed, modeled, and experimentally investigated. The problem of high sensitivity of the vibration control system to varying operational conditions is resolved by applying an adaptive control to the circuit parameters of the negative capacitor. A control law that is based on the estimation of the value of the effective spring constant of a shunted piezoelectric actuator is presented. An adaptive system which achieves a self-adjustment of the negative capacitor parameters is presented. It is shown that such an arrangement allows the design of a simple electronic system which offers a great vibration isolation efficiency under variable vibration conditions.

The electrical asymmetry effect in a multi frequency geometrically asymmetric capacitively coupled plasma: A study by a nonlinear global model

NASA Astrophysics Data System (ADS)

Saikia, P.; Bhuyan, H.; Escalona, M.; Favre, M.; Bora, B.; Kakati, M.; Wyndham, E.; Rawat, R. S.; Schulze, J.

2018-05-01

We investigate the electrical asymmetry effect (EAE) and the current dynamics in a geometrically asymmetric capacitively coupled radio frequency plasma driven by multiple consecutive harmonics based on a nonlinear global model. The discharge symmetry is controlled via the EAE, i.e., by varying the total number of harmonics and tuning the phase shifts ( θ k ) between them. Here, we systematically study the EAE in a low pressure (4 Pa) argon discharge with different geometrical asymmetries driven by a multifrequency rf source consisting of 13.56 MHz and its harmonics. We find that the geometrical asymmetry strongly affects the absolute value of the DC self-bias voltage, but its functional dependence on θ k is similar at different values of the geometrical asymmetry. Also, the values of the DC self-bias are enhanced by adding more consecutive harmonics. The voltage drop across the sheath at the powered and grounded electrode is found to increase/decrease, respectively, with the increase in the number of harmonics of the fundamental frequency. For the purpose of validating the model, its outputs are compared with the results obtained in a geometrically and electrically asymmetric 2f capacitively coupled plasmas experiment conducted by Schuengel et al. [J. Appl. Phys. 112, 053302 (2012)]. Finally, we study the self-excitation of nonlinear plasma series resonance oscillations and its dependence on the geometrical asymmetry as well as the phase angles between the driving frequencies.

New equivalent-electrical circuit model and a practical measurement method for human body impedance.

PubMed

Chinen, Koyu; Kinjo, Ichiko; Zamami, Aki; Irei, Kotoyo; Nagayama, Kanako

2015-01-01

Human body impedance analysis is an effective tool to extract electrical information from tissues in the human body. This paper presents a new measurement method of impedance using armpit electrode and a new equivalent circuit model for the human body. The lowest impedance was measured by using an LCR meter and six electrodes including armpit electrodes. The electrical equivalent circuit model for the cell consists of resistance R and capacitance C. The R represents electrical resistance of the liquid of the inside and outside of the cell, and the C represents high frequency conductance of the cell membrane. We propose an equivalent circuit model which consists of five parallel high frequency-passing CR circuits. The proposed equivalent circuit represents alpha distribution in the impedance measured at a lower frequency range due to ion current of the outside of the cell, and beta distribution at a high frequency range due to the cell membrane and the liquid inside cell. The calculated values by using the proposed equivalent circuit model were consistent with the measured values for the human body impedance.

Simulation of Dual-Electrode Capacitively Coupled Plasma Discharges

NASA Astrophysics Data System (ADS)

Lu, Yijia; Ji, Linhong; Cheng, Jia

2016-12-01

Dual-electrode capacitively coupled plasma discharges are investigated here to lower the non-uniformity of plasma density. The dual-electrode structure proposed by Jung splits the electrode region and increases the flexibility of fine tuning non-uniformity. Different RF voltages, frequencies, phase-shifts and electrode areas are simulated and the influences are discussed. RF voltage and electrode area have a non-monotonic effect on non-uniformity, while frequency has a monotonic effect. Phase-shift has a cyclical influence on non-uniformity. A special combination of 224 V voltage and 11% area ratio with 10 MHz lowers the non-uniformity of the original set (200 V voltage and 0% area ratio with 10 MHz) by 46.5%. The position of the plasma density peak at the probe line has been tracked and properly tuning the phase-shift can obtain the same trace as tuning frequency or voltage. supported by National Natural Science Foundation of China (No. 51405261)

New insights into the interface between a single-crystalline metal electrode and an extremely pure ionic liquid: slow interfacial processes and the influence of temperature on interfacial dynamics.

PubMed

Drüschler, Marcel; Borisenko, Natalia; Wallauer, Jens; Winter, Christian; Huber, Benedikt; Endres, Frank; Roling, Bernhard

2012-04-21

Ionic liquids are of high interest for the development of safe electrolytes in modern electrochemical cells, such as batteries, supercapacitors and dye-sensitised solar cells. However, electrochemical applications of ionic liquids are still hindered by the limited understanding of the interface between electrode materials and ionic liquids. In this article, we first review the state of the art in both experiment and theory. Then we illustrate some general trends by taking the interface between the extremely pure ionic liquid 1-butyl-1-methylpyrrolidinium tris(pentafluoroethyl)trifluorophosphate and an Au(111) electrode as an example. For the study of this interface, electrochemical impedance spectroscopy was combined with in situ STM and in situ AFM techniques. In addition, we present new results for the temperature dependence of the interfacial capacitance and dynamics. Since the interfacial dynamics are characterised by different processes taking place on different time scales, the temperature dependence of the dynamics can only be reliably studied by recording and carefully analysing broadband capacitance spectra. Single-frequency experiments may lead to artefacts in the temperature dependence of the interfacial capacitance. We demonstrate that the fast capacitive process exhibits a Vogel-Fulcher-Tamman temperature dependence, since its time scale is governed by the ionic conductivity of the ionic liquid. In contrast, the slower capacitive process appears to be Arrhenius activated. This suggests that the time scale of this process is determined by a temperature-independent barrier, which may be related to structural reorganisations of the Au surface and/or to charge redistributions in the strongly bound innermost ion layer. This journal is © the Owner Societies 2012

Novel attributes of AlGaN/AlN/GaN/SiC HEMTs with the multiple indented channel

NASA Astrophysics Data System (ADS)

Orouji, Ali A.; Ghaffari, Majid

2015-11-01

In this paper, a high performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with the multiple indented channel (MIC-HEMT) is proposed. The main focus of the proposed structure is based on reduction of the space around the gate, stop of the spread of the depletion region around the source-drain, and decrement of the thickness of the channel between the gate and drain. Therefore, the breakdown voltage increases, meanwhile the elimination of the gate depletion layer extension to source/drain decreases the gate-source and gate-drain capacitances. The optimized results reveal that the breakdown voltage and the drain saturation current increase about 178% and 46% compared with a conventional HEMT (C-HEMT), respectively. Therefore, the maximum output power density is improved by factor 4.1 in comparison with conventional one. Also, the cut-off frequency of 25.2 GHz and the maximum oscillation frequency of 92.1 GHz for the MIC-HEMT are obtained compared to 13 GHz and 43 GHz for that of the C-HEMT and the minimum figure noise decreased consequently of reducing the gate-drain and gate-source capacitances by about 42% and 40%, respectively. The proposed MIC-HEMT shows a maximum stable gain (MSG) exceeding 24.1 dB at 3.1 GHz which the greatest gain is yet reported for HEMTs, showing the potential of this device for high power RF applications.

Volume conductor model of transcutaneous electrical stimulation with kilohertz signals

PubMed Central

Medina, Leonel E.; Grill, Warren M.

2014-01-01

Objective Incorporating high-frequency components in transcutaneous electrical stimulation (TES) waveforms may make it possible to stimulate deeper nerve fibers since the impedance of tissue declines with increasing frequency. However, the mechanisms of high-frequency TES remain largely unexplored. We investigated the properties of TES with frequencies beyond those typically used in neural stimulation. Approach We implemented a multilayer volume conductor model including dispersion and capacitive effects, coupled to a cable model of a nerve fiber. We simulated voltage- and current-controlled transcutaneous stimulation, and quantified the effects of frequency on the distribution of potentials and fiber excitation. We also quantified the effects of a novel transdermal amplitude modulated signal (TAMS) consisting of a non-zero offset sinusoidal carrier modulated by a square-pulse train. Main results The model revealed that high-frequency signals generated larger potentials at depth than did low frequencies, but this did not translate into lower stimulation thresholds. Both TAMS and conventional rectangular pulses activated more superficial fibers in addition to the deeper, target fibers, and at no frequency did we observe an inversion of the strength-distance relationship. Current regulated stimulation was more strongly influenced by fiber depth, whereas voltage regulated stimulation was more strongly influenced by skin thickness. Finally, our model reproduced the threshold-frequency relationship of experimentally measured motor thresholds. Significance The model may be used for prediction of motor thresholds in TES, and contributes to the understanding of high-frequency TES. PMID:25380254

Volume conductor model of transcutaneous electrical stimulation with kilohertz signals

NASA Astrophysics Data System (ADS)

Medina, Leonel E.; Grill, Warren M.

2014-12-01

Objective. Incorporating high-frequency components in transcutaneous electrical stimulation (TES) waveforms may make it possible to stimulate deeper nerve fibers since the impedance of tissue declines with increasing frequency. However, the mechanisms of high-frequency TES remain largely unexplored. We investigated the properties of TES with frequencies beyond those typically used in neural stimulation. Approach. We implemented a multilayer volume conductor model including dispersion and capacitive effects, coupled to a cable model of a nerve fiber. We simulated voltage- and current-controlled transcutaneous stimulation, and quantified the effects of frequency on the distribution of potentials and fiber excitation. We also quantified the effects of a novel transdermal amplitude modulated signal (TAMS) consisting of a non-zero offset sinusoidal carrier modulated by a square-pulse train. Main results. The model revealed that high-frequency signals generated larger potentials at depth than did low frequencies, but this did not translate into lower stimulation thresholds. Both TAMS and conventional rectangular pulses activated more superficial fibers in addition to the deeper, target fibers, and at no frequency did we observe an inversion of the strength-distance relationship. Current regulated stimulation was more strongly influenced by fiber depth, whereas voltage regulated stimulation was more strongly influenced by skin thickness. Finally, our model reproduced the threshold-frequency relationship of experimentally measured motor thresholds. Significance. The model may be used for prediction of motor thresholds in TES, and contributes to the understanding of high-frequency TES.

Flexible graphene/carbon nanotube hybrid papers chemical-reduction-tailored by gallic acid for high-performance electrochemical capacitive energy storages

NASA Astrophysics Data System (ADS)

Yao, Lu; Zhou, Chao; Hu, Nantao; Hu, Jing; Hong, Min; Zhang, Liying; Zhang, Yafei

2018-03-01

Mechanically robust graphene papers with both high gravimetric and volumetric capacitances are desired for high-performance energy storages. However, it's still a challenge to tailor the structure of graphene papers in order to meet this requirement. In this work, a kind of chemical-reduction-tailored mechanically-robust reduced graphene oxide/carbon nanotube hybrid paper has been reported for high-performance electrochemical capacitive energy storages. Gallic acid (GA), as an excellent reducing agent, was used to reduce graphene oxide. Through vacuum filtration of gallic acid reduced graphene oxide (GA-rGO) and carboxylic multiwalled carbon nanotubes (MWCNTs) aqueous suspensions, mechanically robust GA-rGO/MWCNTs hybrid papers were obtained. The resultant hybrid papers showed high gravimetric capacitance of 337.6 F g-1 (0.5 A g-1) and volumetric capacitance of 151.2 F cm-3 (0.25 A cm-3). In addition, the assembled symmetric device based on the hybrid papers exhibited high gravimetric capacitance of 291.6 F g-1 (0.5 A g-1) and volumetric capacitance of 136.6 F cm-3 (0.25 A cm-3). Meanwhile, it exhibited excellent rate capability and cycling stability. Above all, this chemical reduction tailoring technique and the resultant high-performance GA-rGO/MWCNTs hybrid papers give an insight for designing high-performance electrodes and hold a great potential in the field of energy storages.

Capacitive Deionization of High-Salinity Solutions

DOE PAGES

Sharma, Ketki; Gabitto, Jorge; Mayes, Richard T.; ...

2014-12-22

Desalination of high salinity solutions has been studied using a novel experimental technique and a theoretical model. Neutron imaging has been employed to visualize lithium ions in mesoporous carbon materials, which are used as electrodes in capacitive deionization for water desalination. Experiments were conducted with a flow-through capacitive deionization cell designed for neutron imaging and with lithium chloride ( 6LiCl) as the electrolyte. Sequences of neutron images have been obtained at a relatively high concentration of lithium chloride ( 6LiCl) solution to provide information on the transport of ions within the electrodes. A new model that computes the individual ionicmore » concentration profiles inside mesoporous carbon electrodes has been used to simulate the capacitive deionization process. Modifications have also been introduced into the simulation model to calculate results at high electrolyte concentrations. Experimental data and simulation results provide insight into why capacitive deionization is not effective for desalination of high ionic-strength solutions. The combination of experimental information, obtained through neutron imaging, with the theoretical model will help in the design of capacitive deionization devices, which can improve the process for high ionic-strength solutions.« less

Development of a novel configuration for a MEMS transducer for low bias and high resolution imaging applications

NASA Astrophysics Data System (ADS)

Emadi, Tahereh Arezoo; Buchanan, Douglas A.

2014-03-01

A robust capacitive micromachined ultrasonic transducer has been developed. In this novel configuration, a stack of two deflectable membranes are suspended over a fixed bottom electrode. Similar to conventional capacitive ultrasonic transducers, a generated electrostatic force between the electrodes causes the membranes to deflect and vibrate. However, in this new configuration the transducer effective cavity height is reduced due to the deflection of two membranes. Therefore, the transducer spring constant is more susceptible to bias voltage, which in return reduces the required bias voltage. The transducers have been produced employing a MEMS sacrificial technique where two different membrane anchoring (curved- and flat- anchors) structures, with similar membrane radii were fabricated. Highly doped polysilicon was used as the membrane material. The resonant frequencies of the two transducers have been investigated. It was found that the transducers with curved membrane anchors exhibits a larger resonant frequency shift compared to the transducers with flat membranes for a given bias voltage. Comparison has been made between the spring constant of the flat membrane transducer and that of a conventional single membrane transducer. It is shown that the multiple moving membrane transducer exhibits a larger reduction in the spring constant compared to the conventional transducer, when driven with the same bias voltage. This results in a transducer with a higher power generation capability and sensitivity.

Experimental investigations of driving frequency effect in low-pressure capacitively coupled oxygen discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Jia; Liu, Yong-Xin; Liu, Gang-Hu

2015-04-14

The effect of driving frequency on the electron density is investigated in low-pressure capacitively coupled oxygen plasmas by utilizing a floating hairpin probe. The power absorbed by the plasma is investigated and it is found that the power lost in the matching network can reach 50% or higher under certain conditions. The effect of driving frequency on the electron density is studied from two aspects, i.e., constant absorbed power and electrode voltage. In the former case, the electron density increases with the driving frequency increasing from 13.56 to 40.68 MHz and slightly changes depending on the gas pressures with the frequencymore » further increasing to 100 MHz. In the latter case, the electron density rapidly increases when the driving frequency increases from 13.56 to 40.68 MHz, and then decreases with the frequency further increasing to 100 MHz. The electron series resonance is observed at 40.68 MHz and can be attributed to the higher electron density. And the standing wave effect also plays an important role in increasing electron density at 100 MHz and 2.6 Pa.« less

Memory characteristics of metal-oxide-semiconductor structures based on Ge nanoclusters-embedded GeO(x) films grown at low temperature.

PubMed

Lin, Tzu-Shun; Lou, Li-Ren; Lee, Ching-Ting; Tsai, Tai-Cheng

2012-03-01

The memory devices constructed from the Ge-nanoclusters embedded GeO(x) layer deposited by the laser-assisted chemical vapor deposition (LACVD) system were fabricated. The Ge nanoclusters were observed by a high-resolution transmission electron microscopy. Using the capacitance versus voltage (C-V) and the conductance versus voltage (G-V) characteristics measured under various frequencies, the memory effect observed in the C-V curves was dominantly attributed to the charge storage in the Ge nanoclusters. Furthermore, the defects existed in the deposited film and the interface states were insignificant to the memory performances. Capacitance versus time (C-t) measurement was also executed to evaluate the charge retention characteristics. The charge storage and retention behaviors of the devices demonstrated that the Ge nanoclusters grown by the LACVD system at low temperature are promising for memory device applications.

The platinum microelectrode/Nafion interface - An electrochemical impedance spectroscopic analysis of oxygen reduction kinetics and Nafion characteristics

NASA Technical Reports Server (NTRS)

Parthasarathy, Arvind; Dave, Bhasker; Srinivasan, Supramaniam; Appleby, John A.; Martin, Charles R.

1992-01-01

The objectives of this study were to use electrochemical impedance spectroscopy (EIS) to study the oxygen-reduction reaction under lower humidification conditions than previously studied. The EIS technique permits the discrimination of electrode kinetics of oxygen reduction, mass transport of O2 in the membrane, and the electrical characteristics of the membrane. Electrode-kinetic parameters for the oxygen-reduction reaction, corrosion current densities for Pt, and double-layer capacitances were calculated. The production of water due to electrochemical reduction of oxygen greatly influenced the EIS response and the electrode kinetics at the Pt/Nafion interface. From the finite-length Warburg behavior, a measure of the diffusion coefficient of oxygen in Nafion and diffusion-layer thickness was obtained. An analysis of the EIS data in the high-frequency domain yielded membrane and interfacial characteristics such as ionic conductivity of the membrane, membrane grain-boundary capacitance and resistance, and uncompensated resistance.

Annealing effects on capacitance-voltage characteristics of a-Si/SiN(x) multilayer prepared using hot-wire chemical vapour deposition.

PubMed

Panchal, A K; Rai, D K; Solanki, C S

2011-04-01

Post-deposition annealing of a-Si/SiN(x) multilayer films at different temperature shows varying shift in high frequency (1 MHz) capacitance-voltage (HFCV) characteristics. Various a-Si/SiN(x) multilayer films were deposited using hot wire chemical vapor deposition (HWCVD) and annealed in the temperature range of 800 to 900 degrees C to precipitate Si quantum dots (Si-QD) in a-Si layers. HFCV measurements of the as-deposited and annealed films in metal-insulator-semiconductor (MIS) structures show hysterisis in C-V curves. The hysteresis in the as-deposited films and annealed films is attributed to charge trapping in Si-dangling bonds in a-Si layer and in Si-QD respectively. The charge trapping density in Si-QD increases with temperature while the interface defects density (D(it)) remains constant.

Deep Tissue Photoacoustic Imaging Using a Miniaturized 2-D Capacitive Micromachined Ultrasonic Transducer Array

PubMed Central

Kothapalli, Sri-Rajasekhar; Ma, Te-Jen; Vaithilingam, Srikant; Oralkan, Ömer

2014-01-01

In this paper, we demonstrate 3-D photoacoustic imaging (PAI) of light absorbing objects embedded as deep as 5 cm inside strong optically scattering phantoms using a miniaturized (4 mm × 4 mm × 500 µm), 2-D capacitive micromachined ultrasonic transducer (CMUT) array of 16 × 16 elements with a center frequency of 5.5 MHz. Two-dimensional tomographic images and 3-D volumetric images of the objects placed at different depths are presented. In addition, we studied the sensitivity of CMUT-based PAI to the concentration of indocyanine green dye at 5 cm depth inside the phantom. Under optimized experimental conditions, the objects at 5 cm depth can be imaged with SNR of about 35 dB and a spatial resolution of approximately 500 µm. Results demonstrate that CMUTs with integrated front-end amplifier circuits are an attractive choice for achieving relatively high depth sensitivity for PAI. PMID:22249594

Performance comparison between p–i–n and p–n junction tunneling field-effect transistors

NASA Astrophysics Data System (ADS)

Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

2018-06-01

In this study, we investigated the direct-current (DC) and radio-frequency (RF) performances of p–i–n and p–n junction tunneling field-effect transistors (TFETs). Compared to the p–i–n junction TFET, the p–n junction TFET exhibited higher on-state current (I on) because the channel formation mechanism of the p–n junction TFET resulted in a narrower tunneling barrier and an expanded tunneling area. Further, the reduction of I on of the p–n junction TFET by the interface trap was smaller. Moreover, the p–n junction TFET exhibited lower gate-to-drain capacitance (C gd) because a depletion capacitance (C gd,dep) was formed by the depletion region under gate dielectric. Consequently, the p–n junction TFET achieved an improvement of cut-off frequency (f T) and intrinsic delay time (τ), which are related to the current performance and total gate capacitance (C gg). We confirmed the enhancement of device performances in terms of I on, f T, and τ by the conduction mechanism of the p–n junction TFET.

Design and Application of a Collocated Capacitance Sensor for Magnetic Bearing Spindle

NASA Technical Reports Server (NTRS)

Shin, Dongwon; Liu, Seon-Jung; Kim, Jongwon

1996-01-01

This paper presents a collocated capacitance sensor for magnetic bearings. The main feature of the sensor is that it is made of a specific compact printed circuit board (PCB). The signal processing unit has been also developed. The results of the experimental performance evaluation on the sensitivity, resolution and frequency response of the sensor are presented. Finally, an application example of the sensor to the active control of a magnetic bearing is described.

High frequency characteristic of a monolithic 500 °C OpAmp-RC integrator in SiC bipolar IC technology

NASA Astrophysics Data System (ADS)

Tian, Ye; Zetterling, Carl-Mikael

2017-09-01

This paper presents a comprehensive investigation of the frequency response of a monolithic OpAmp-RC integrator implemented in a 4H-SiC bipolar IC technology. The circuits and devices have been measured and characterized from 27 to 500 °C. The devices have been modelled to identify that the substrate capacitance is a dominant factor affecting the OpAmp's high-frequency response. Large Miller compensation capacitors of more than 540 pF are required to ensure stability of the internal OpAmp. The measured unit-gain-bandwidth product of the OpAmp is ∼1.1 MHz at 27 °C, and decreases to ∼0.5 MHz at 500 °C mainly due to the reduction of the transistor's current gain. On the other hand, it is not necessary to compensate the integrator in a relatively wide bandwidth ∼0.7 MHz over the investigated temperature range. At higher frequencies, the integrator's frequency response has been identified to be significantly affected by that of the OpAmp and load impedance. This work demonstrates the potential of this technology for high temperature applications requiring bandwidths of several megahertz.

Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

NASA Astrophysics Data System (ADS)

Strobel, C.; Chavarin, C. A.; Kitzmann, J.; Lupina, G.; Wenger, Ch.; Albert, M.; Bartha, J. W.

2017-06-01

N-type doped amorphous hydrogenated silicon (a-Si:H) is deposited on top of graphene (Gr) by means of very high frequency (VHF) and radio frequency plasma-enhanced chemical vapor deposition (PECVD). In order to preserve the structural integrity of the monolayer graphene, a plasma excitation frequency of 140 MHz was successfully applied during the a-Si:H VHF-deposition. Raman spectroscopy results indicate the absence of a defect peak in the graphene spectrum after the VHF-PECVD of (n)-a-Si:H. The diode junction between (n)-a-Si:H and graphene was characterized using temperature dependent current-voltage (IV) and capacitance-voltage measurements, respectively. We demonstrate that the current at the (n)-a-Si:H-graphene interface is dominated by thermionic emission and recombination in the space charge region. The Schottky barrier height (qΦB), derived by temperature dependent IV-characteristics, is about 0.49 eV. The junction properties strongly depend on the applied deposition method of (n)-a-Si:H with a clear advantage of the VHF(140 MHz)-technology. We have demonstrated that (n)-a-Si:H-graphene junctions are a promising technology approach for high frequency heterojunction transistors.

Mass sensing based on a circuit cavity electromechanical system

NASA Astrophysics Data System (ADS)

Jiang, Cheng; Chen, Bin; Li, Jin-Jin; Zhu, Ka-Di

2011-10-01

We present a scheme for mass sensing based on a circuit cavity electromechanical system where a free-standing, flexible aluminium membrane is capacitively coupled to a superconducting microwave cavity. Integration with the microwave cavity enables capacitive readout of the mechanical resonance directly on the chip. A microwave pump field and a second probe field are simultaneously applied to the cavity. The accreted mass landing on the membrane can be measured conveniently by tracking the mechanical resonance frequency shifts due to mass changes in the probe transmission spectrum. The mass responsivity for the membrane is 0.72 Hz/ag and we demonstrate that frequency shifts induced by adsorption of one hundred 1587 bp DNA molecules can be well resolved in the probe transmission spectrum.

MEMS based hair flow-sensors as model systems for acoustic perception studies

NASA Astrophysics Data System (ADS)

Krijnen, Gijs J. M.; Dijkstra, Marcel; van Baar, John J.; Shankar, Siripurapu S.; Kuipers, Winfred J.; de Boer, Rik J. H.; Altpeter, Dominique; Lammerink, Theo S. J.; Wiegerink, Remco

2006-02-01

Arrays of MEMS fabricated flow sensors inspired by the acoustic flow-sensitive hairs found on the cerci of crickets have been designed, fabricated and characterized. The hairs consist of up to 1 mm long SU-8 structures mounted on suspended membranes with normal translational and rotational degrees of freedom. Electrodes on the membrane and on the substrate form variable capacitors, allowing for capacitive read-out. Capacitance versus voltage, frequency dependence and directional sensitivity measurements have been successfully carried out on fabricated sensor arrays, showing the viability of the concept. The sensors form a model system allowing for investigations on sensory acoustics by their arrayed nature, their adaptivity via electrostatic interaction (frequency tuning and parametric amplification) and their susceptibility to noise (stochastic resonance).

The effect of radio-frequency self bias on ion acceleration in expanding argon plasmas in helicon sources

NASA Astrophysics Data System (ADS)

Wiebold, Matthew D.

Time-averaged plasma potential differences up to ˜ 165 V over several hundred Debye lengths are observed in low pressure (pn < 1 mTorr) expanding argon plasmas in the Madison Helicon Experiment. The potential gradient leads to ion acceleration exceeding Ei ≈ 7 kTe in some cases. Up to 1 kW of 13.56 MHz RF power is supplied to a half-turn, double-helix antenna in the presence of a nozzle magnetic field up to 1 kG. An RPA measures the IEDF and an emissive probe measures the plasma potential. Single and double probes measure the electron density and temperature. Two distinct mode hops, the capacitive-inductive (E-H) and inductive-helicon (H-W) transitions, are identified by jumps in electron density as RF power is increased. In the capacitive mode, large fluctuations of the plasma potential (Vp--p ≳ 140 V, Vp--p/Vp ≈ 150%) exist at the RF frequency, leading to formation of a self-bias voltage. The mobile electrons can flow from the upstream region during an RF cycle whereas ions cannot, leading to an initial imbalance of flux, and the self-bias voltage builds as a result. The plasma potential in the expansion chamber is held near the floating potential for argon (Vp ≈ 5kTe/e). In the capacitive mode, the ion acceleration is not well described by an ambipolar relation. The accelerated population decay is consistent with that predicted by charge-exchange collisions. Grounding the upstream endplate increases the self-bias voltage compared to a floating endplate. In the inductive and helicon modes, the ion acceleration more closely follows an ambipolar relation, a result of decreased capacitive coupling due to the decreased RF skin depth. The scaling of the potential gradient with the argon flow rate, magnetic field and RF power are investigated, with the highest potential gradients observed for the lowest flow rates in the capacitive mode. The magnitude of the self-bias voltage agrees well with that predicted for RF sheaths. Use of the self-bias effect in a plasma thruster is explored, possibly for a low thrust, high specific impulse mode in a multi-mode helicon thruster. This work could also explain similar potential gradients in expanding helicon plasmas that are ascribed to double layer formation in the literature.

Optical micromachined ultrasound transducers (OMUT)--a new approach for high-frequency transducers.

PubMed

Tadayon, Mohammad Amin; Ashkenazi, Shai

2013-09-01

The sensitivity and reliability of piezoelectric ultrasound transducers severely degrade in applications requiring high frequency and small element size. Alternative technologies such as capacitive micromachined ultrasound transducers (CMUT) and optical sensing and generation of ultrasound have been proposed and studied for several decades. In this paper, we present a new type of device based on optical micromachined ultrasound transducer (OMUT) technology. OMUTs rely on microfabrication techniques to construct micrometerscale air cavities capped by an elastic membrane. A modified photoresist bonding process has been developed to facilitate the fabrication of these devices. We will describe the design, fabrication, and testing of prototype OMUT devices which implement a receive-only function. Future design modifications are proposed for incorporating complete transmit¿receive functionality in a single element.

Detailed studies of full-size ATLAS12 sensors

NASA Astrophysics Data System (ADS)

Hommels, L. B. A.; Allport, P. P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.; Kierstead, J.; Kuczewski, P.; Lynn, D.; Arratia, M.; Klein, C. T.; Ullan, M.; Fleta, C.; Fernandez-Tejero, J.; Bloch, I.; Gregor, I. M.; Lohwasser, K.; Poley, L.; Tackmann, K.; Trofimov, A.; Yildirim, E.; Hauser, M.; Jakobs, K.; Kuehn, S.; Mahboubi, K.; Mori, R.; Parzefall, U.; Clark, A.; Ferrere, D.; Gonzalez Sevilla, S.; Ashby, J.; Blue, A.; Bates, R.; Buttar, C.; Doherty, F.; McMullen, T.; McEwan, F.; O`Shea, V.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Unno, Y.; Takashima, R.; Chilingarov, A.; Fox, H.; Affolder, A. A.; Casse, G.; Dervan, P.; Forshaw, D.; Greenall, A.; Wonsak, S.; Wormald, M.; Cindro, V.; Kramberger, G.; Mandić, I.; Mikuž, M.; Gorelov, I.; Hoeferkamp, M.; Palni, P.; Seidel, S.; Taylor, A.; Toms, K.; Wang, R.; Hessey, N. P.; Valencic, N.; Hanagaki, K.; Dolezal, Z.; Kodys, P.; Bohm, J.; Stastny, J.; Mikestikova, M.; Bevan, A.; Beck, G.; Milke, C.; Domingo, M.; Fadeyev, V.; Galloway, Z.; Hibbard-Lubow, D.; Liang, Z.; Sadrozinski, H. F.-W.; Seiden, A.; To, K.; French, R.; Hodgson, P.; Marin-Reyes, H.; Parker, K.; Jinnouchi, O.; Hara, K.; Sato, K.; Sato, K.; Hagihara, M.; Iwabuchi, S.; Bernabeu, J.; Civera, J. V.; Garcia, C.; Lacasta, C.; Marti i Garcia, S.; Rodriguez, D.; Santoyo, D.; Solaz, C.; Soldevila, U.

2016-09-01

The "ATLAS ITk Strip Sensor Collaboration" R&D group has developed a second iteration of single-sided n+-in-p type micro-strip sensors for use in the tracker upgrade of the ATLAS experiment at the High-Luminosity (HL) LHC. The full size sensors measure approximately 97 × 97mm2 and are designed for tolerance against the 1.1 ×1015neq /cm2 fluence expected at the HL-LHC. Each sensor has 4 columns of 1280 individual 23.9 mm long channels, arranged at 74.5 μm pitch. Four batches comprising 120 sensors produced by Hamamatsu Photonics were evaluated for their mechanical, and electrical bulk and strip characteristics. Optical microscopy measurements were performed to obtain the sensor surface profile. Leakage current and bulk capacitance properties were measured for each individual sensor. For sample strips across the sensor batches, the inter-strip capacitance and resistance as well as properties of the punch-through protection structure were measured. A multi-channel probecard was used to measure leakage current, coupling capacitance and bias resistance for each individual channel of 100 sensors in three batches. The compiled results for 120 unirradiated sensors are presented in this paper, including summary results for almost 500,000 strips probed. Results on the reverse bias voltage dependence of various parameters and frequency dependence of tested capacitances are included for validation of the experimental methods used. Comparing results with specified values, almost all sensors fall well within specification.

Effects of Bias Pulsing on Etching of SiO2 Pattern in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Hard Masks.

PubMed

Kim, Sechan; Choi, Gyuhyun; Chae, Heeyeop; Lee, Nae-Eung

2016-05-01

In order to study the effects of bias pulsing on the etching characteristics of a silicon dioxide (SiO2) layer using multi-level hard mask (MLHM) structures of ArF photoresist/bottom anti-reflected coating/SiO2/amorphous carbon layer (ACL)/SiO2, the effects of bias pulsing conditions on the etch characteristics of a SiO2 layer with an ACL mask pattern in C4F8/CH2F2/O2/Ar etch chemistries were investigated in a dual-frequency capacitively-coupled plasma (CCP) etcher. The effects of the pulse frequency, duty ratio, and pulse-bias power in the 2 MHz low-frequency (LF) power source were investigated in plasmas generated by a 27.12 MHz high-frequency (HF) power source. The etch rates of ACL and SiO2 decreased, but the etch selectivity of SiO2/ACL increased with decreasing duty ratio. When the ACL and SiO2 layers were etched with increasing pulse frequency, no significant change was observed in the etch rates and etch selectivity. With increasing LF pulse-bias power, the etch rate of ACL and SiO2 slightly increased, but the etch selectivity of SiO2/ACL decreased. Also, the precise control of the critical dimension (CD) values with decreasing duty ratio can be explained by the protection of sidewall etching of SiO2 by increased passivation. Pulse-biased etching was successfully applied to the patterning of the nano-scale line and space of SiO2 using an ACL pattern.

Admittance–voltage profiling of Al{sub x}Ga{sub 1−x}N/GaN heterostructures: Frequency dependence of capacitance and conductance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Köhler, K.; Pletschen, W.; Godejohann, B.

2015-11-28

Admittance–voltage profiling of Al{sub x}Ga{sub 1−x}N/GaN heterostructures was used to determine the frequency dependent capacitance and conductance of FET devices in the frequency range from 50 Hz to 1 MHz. The nominally undoped low pressure metal-organic vapor-phase epitaxy structures were grown with an Al-content of 30%. An additional 1 nm thick AlN interlayer was placed in one structure before the Al{sub 0.3}Ga{sub 0.7}N layer growth. For frequencies below 10{sup 8} Hz it is convenient to use equivalent circuits to represent electric or dielectric properties of a material, a method widely used, for example, in impedance spectroscopy. We want to emphasize the relation betweenmore » frequency dependent admittance–voltage profiling and the corresponding equivalent circuits to the complex dielectric function. Debye and Drude models are used for the description of the frequency dependent admittance profiles in a range of depletion onset of the two-dimensional electron gas. Capacitance- and conductance-frequency profiles are fitted in the entire measured range by combining both models. Based on our results, we see contributions to the two-dimensional electron gas for our samples from surface states (80%) as well as from background doping in the Al{sub 0.3}Ga{sub 0.7}N barriers (20%). The specific resistance of the layers below the gate is above 10{sup 5} Ω cm for both samples and increases with increasing negative bias, i.e., the layers below the gate are essentially depleted. We propose that the resistance due to free charge carriers, determined by the Drude model, is located between gate and drain and, because of the AlN interlayer, the resistance is lowered by a factor of about 30 if compared to the sample without an AlN layer.« less

Measurement of electron density transients in pulsed RF discharges using a frequency boxcar hairpin probe

NASA Astrophysics Data System (ADS)

Peterson, David; Coumou, David; Shannon, Steven

2015-11-01

Time resolved electron density measurements in pulsed RF discharges are shown using a hairpin resonance probe using low cost electronics, on par with normal Langmuir probe boxcar mode operation. Time resolution of 10 microseconds has been demonstrated. A signal generator produces the applied microwave frequency; the reflected waveform is passed through a directional coupler and filtered to remove the RF component. The signal is heterodyned with a frequency mixer and rectified to produce a DC signal read by an oscilloscope. At certain points during the pulse, the plasma density is such that the applied frequency is the same as the resonance frequency of the probe/plasma system, creating reflected signal dips. The applied microwave frequency is shifted in small increments in a frequency boxcar routine to determine the density as a function of time. A dc sheath correction is applied for the grounded probe, producing low cost, high fidelity, and highly reproducible electron density measurements. The measurements are made in both inductively and capacitively coupled systems, the latter driven by multiple frequencies where a subset of these frequencies are pulsed. Measurements are compared to previous published results, time resolved OES, and in-line measurement of plasma impedance. This work is supported by the NSF DOE partnership on plasma science, the NSF GOALI program, and MKS Instruments.

Highly Compressible Carbon Sponge Supercapacitor Electrode with Enhanced Performance by Growing Nickel-Cobalt Sulfide Nanosheets.

PubMed

Liang, Xu; Nie, Kaiwen; Ding, Xian; Dang, Liqin; Sun, Jie; Shi, Feng; Xu, Hua; Jiang, Ruibin; He, Xuexia; Liu, Zonghuai; Lei, Zhibin

2018-03-28

The development of compressible supercapacitor highly relies on the innovative design of electrode materials with both superior compression property and high capacitive performance. This work reports a highly compressible supercapacitor electrode which is prepared by growing electroactive NiCo 2 S 4 (NCS) nanosheets on the compressible carbon sponge (CS). The strong adhesion of the metallic conductive NCS nanosheets to the highly porous carbon scaffolds enable the CS-NCS composite electrode to exhibit an enhanced conductivity and ideal structural integrity during repeated compression-release cycles. Accordingly, the CS-NCS composite electrode delivers a specific capacitance of 1093 F g -1 at 0.5 A g -1 and remarkable rate performance with 91% capacitance retention in the range of 0.5-20 A g -1 . Capacitance performance under the strain of 60% shows that the incorporation of NCS nanosheets in CS scaffolds leads to over five times enhancement in gravimetric capacitance and 17 times enhancement in volumetric capacitance. These performances enable the CS-NCS composite to be one of the promising candidates for potential applications in compressible electrochemical energy storage devices.

Research on the electromagnetic radiation characteristics of the gas main switch of a capacitive intense electron-beam accelerator

NASA Astrophysics Data System (ADS)

Qiu, Yongfeng; Liu, Jinliang; Yang, Jianhua; Cheng, Xinbing; Li, Guolin

2017-11-01

Strong electromagnetic fields are radiated during the operation of the intense electron-beam accelerator (IEBA), which may lead to the nearby electronic devices out of order. In this paper, the research on the electromagnetic radiation characteristic of the gas main switch of a capacitive IEBA is carried out by the methods of theory analysis and experiment investigation. It is obtained that the gas main switch is the dominating radiation resource. In the absence of electromagnetic shielding for the gas main switch, when the pulse forming line of the IEBA is charged to 700 kV, the radiation field with amplitude of 3280 V/m, dominant frequency of 84 MHz and high frequency 100 MHz is obtained at a distance of 10 meters away from the gas main switch. The experimental results of the radiation field agree with the theoretical calculations. We analyze the achievements of several research groups and find that there is a relationship between the rise time (T) of the transient current of the gas main switch and the dominant frequency (F) of the radiation field, namely, F*T=1. Contrast experiment is carried out with a metal shield cover for the gas main switch. Experimental results show that for the shielded setup the radiation field reduces to 115 V/m, the dominant frequency increases to 86.5 MHz at a distance of 10 away meters from the gas main switch. These conclusions are beneficial for further research on the electromagnetic radiation and protection of the IEBA.

Kinetic interpretation of resonance phenomena in low pressure capacitively coupled radio frequency plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wilczek, Sebastian; Trieschmann, Jan; Eremin, Denis

Low pressure capacitive radio frequency (RF) plasmas are often described by equivalent circuit models based on fluid approaches that predict the self-excitation of resonances, e.g., high frequency oscillations of the total current in asymmetric discharges, but do not provide a kinetic interpretation of these effects. In fact, they leave important questions open: How is current continuity ensured in the presence of energetic electron beams generated by the expanding sheaths that lead to a local enhancement of the conduction current propagating through the bulk? How do the beam electrons interact with cold bulk electrons? What is the kinetic origin of resonancemore » phenomena? Based on kinetic simulations, we find that the energetic beam electrons interact with cold bulk electrons (modulated on a timescale of the inverse local electron plasma frequency) via a time dependent electric field outside the sheaths. This electric field is caused by the electron beam itself, which leaves behind a positive space charge, that attracts cold bulk electrons towards the expanding sheath. The resulting displacement current ensures current continuity by locally compensating the enhancement of the conduction current. The backflow of cold electrons and their interaction with the nonlinear plasma sheath cause the generation of multiple electron beams during one phase of sheath expansion and contribute to a strongly non-sinusoidal RF current. These kinetic mechanisms are the basis for a fundamental understanding of the electron power absorption dynamics and resonance phenomena in such plasmas, which are found to occur in discharges of different symmetries including perfectly symmetric plasmas.« less

Monitoring of biofilm aging in a Sphingomonas sp. strain from public drinking water sites through changes in capacitance.

PubMed

Gulati, Parul; Singh, Pawandeep; Chatterjee, Arun Kumar; Ghosh, Moushumi

2017-09-01

This study reports the applicability of a capacitance-based technique for evaluating the biofilm progression of Sphingomonas sp. One hundred and forty isolates of Sphingomonas were screened from public drinking water sites, and one potential strain with biofilm-forming ability was used for the study. The biofilm production by this strain was established in microtiter plates and aluminum coupons. The standard biofilm-forming strain Sphingomonas terrae MTCC 7766 was used for comparison. Changes in biofilm were analyzed by energy-dispersive X-ray spectroscopy (EDX) and scanning electron microscope (SEM). Capacitance values were measured at 1, 100 and 200 kHz frequency; however, 1 kHz was selected since resulted in reproducible values, which could be correlated to biofilm age measured as dry weight over a time of 96 h (4 days) depicting the biofilm growth/progression over time. The EDX, SEM and capacitance values obtained in parallel indicated the related physiological profile usually displayed by biofilms upon growth, suggesting authenticity to the observed capacitance profile. The results of this study demonstrated the feasibility of a capacitance-based method for analyzing biofilm development/progression by Sphingomonas sp. and suggested a simple approach for developing an online system to detect biofilms by this opportunistic pathogen of concern in drinking water.

Field characteristics of an alvarez-type linac structure having chain-like electrode array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Odera, M.; Goto, A.; Hemmi, M.

1985-10-01

A chain-like electrode configuration in an Alvarez-type linac cavity was studied by models. The structure has been devised to get a moderate shunt impedance together with simplicity of operation, in ion velocity region of more than a few percent of that of light by incorporating focusing scheme by high frequency quadrupolar fields into an TM-010 accelerating field of an Alvarez linac. It has a chain-like electrode array instead of drift tubes containing quadrupole lenses for ordinary linacs. The chain-like electrode structure generates along its central axis, high frequency acceleration and focusing fields alternately, separating the acceleration and focusing functions inmore » space. The separation discriminates this structure from spatially uniform acceleration and focusing scheme of the RFQs devised by Kapchinsky and Teplyakov. It gives beam acceleration effects different from those by conventional linacs and reveals possibility of getting a high acceleration efficiency. Resonant frequency spectrum was found relatively simple by measurements on high frequency models. Separation of unwanted modes from the TM-010 acceleration mode is large; a few 10 MHz, at least. Tilt of the acceleration field is not very sensitive to pertubation in gap capacitance for the TM-010 mode.« less

Wafer-scalable high-performance CVD graphene devices and analog circuits

NASA Astrophysics Data System (ADS)

Tao, Li; Lee, Jongho; Li, Huifeng; Piner, Richard; Ruoff, Rodney; Akinwande, Deji

2013-03-01

Graphene field effect transistors (GFETs) will serve as an essential component for functional modules like amplifier and frequency doublers in analog circuits. The performance of these modules is directly related to the mobility of charge carriers in GFETs, which per this study has been greatly improved. Low-field electrostatic measurements show field mobility values up to 12k cm2/Vs at ambient conditions with our newly developed scalable CVD graphene. For both hole and electron transport, fabricated GFETs offer substantial amplification for small and large signals at quasi-static frequencies limited only by external capacitances at high-frequencies. GFETs biased at the peak transconductance point featured high small-signal gain with eventual output power compression similar to conventional transistor amplifiers. GFETs operating around the Dirac voltage afforded positive conversion gain for the first time, to our knowledge, in experimental graphene frequency doublers. This work suggests a realistic prospect for high performance linear and non-linear analog circuits based on the unique electron-hole symmetry and fast transport now accessible in wafer-scalable CVD graphene. *Support from NSF CAREER award (ECCS-1150034) and the W. M. Keck Foundation are appreicated.

Ultrahigh volumetric capacitance and cyclic stability of fluorine and nitrogen co-doped carbon microspheres

NASA Astrophysics Data System (ADS)

Zhou, Junshuang; Lian, Jie; Hou, Li; Zhang, Junchuan; Gou, Huiyang; Xia, Meirong; Zhao, Yufeng; Strobel, Timothy A.; Tao, Lu; Gao, Faming

2015-09-01

Highly porous nanostructures with large surface areas are typically employed for electrical double-layer capacitors to improve gravimetric energy storage capacity; however, high surface area carbon-based electrodes result in poor volumetric capacitance because of the low packing density of porous materials. Here, we demonstrate ultrahigh volumetric capacitance of 521 F cm-3 in aqueous electrolytes for non-porous carbon microsphere electrodes co-doped with fluorine and nitrogen synthesized by low-temperature solvothermal route, rivaling expensive RuO2 or MnO2 pseudo-capacitors. The new electrodes also exhibit excellent cyclic stability without capacitance loss after 10,000 cycles in both acidic and basic electrolytes at a high charge current of 5 A g-1. This work provides a new approach for designing high-performance electrodes with exceptional volumetric capacitance with high mass loadings and charge rates for long-lived electrochemical energy storage systems.

Effect of Electrical Current Stimulation on Pseudomonas Aeruginosa Growth

NASA Astrophysics Data System (ADS)

Alneami, Auns Q.; Khalil, Eman G.; Mohsien, Rana A.; Albeldawi, Ali F.

2018-05-01

The present study evaluates the effect of electrical current with different frequencies stimulation to kill pathogenic Pseudomonas aeruginosa (PA) bacteria in vitro using human safe level of electricity controlled by function generator. A wide range of frequencies has been used from 0.5 Hz-1.2 MHz to stimulate the bacteria at a voltage of 20 p-p volt for different periods of time (5 to 30) minutes. The culture of bacteria used Nickel, Nichrome, or Titanium electrode using agarose in phosphate buffer saline (PBS) and mixed with bacterial stock activated by trypticase soy broth (TSB). The results of frequencies between 0.5-1 KHz show the inhibition zone diameter of 20 mm in average at 30 minutes of stimulation. At frequencies between 3-60 KHz the inhibition zone diameter was only 10mm for 30 minutes of stimulation. While the average of inhibition zone diameter increased to more than 30mm for 30 minutes of stimulation at frequencies between 80-120 KHz. From this study we conclude that at specific frequency (resonance frequency) (frequencies between 0.5-1 KHz) there was relatively large inhibition zone because the inductive reactance effect is equal to the value of capacitive reactance effect (XC = XL). At frequencies over than 60 KHz, maximum inhibition zone noticed because the capacitance impedance becomes negligible (only the small resistivity of the bacterial internal organs).

Biochemical capacitance of Geobacter sulfurreducens biofilms.

PubMed

Bueno, Paulo R; Schrott, Germán D; Bonanni, Pablo S; Simison, Silvia N; Busalmen, Juan P

2015-08-10

An electrical model able to decouple the electron pathway from microbial cell machinery impedance terms is introduced. In this context, capacitance characteristics of the biofilm are clearly resolved. In other words, the model allows separating, according to the advantage of frequency and spectroscopic response approach, the different terms controlling the performance of the microbial biofilm respiratory process and thus the directly related electricity production process. The model can be accurately fitted to voltammetry measurements obtained under steady-state conditions and also to biofilm discharge amperometric measurements. The implications of biological aspects of the electrochemical or redox capacitance are discussed theoretically in the context of current knowledge with regard to structure and physiological activity of microbial Geobacter biofilms. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Characterization of dielectric materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

King, Danny J.; Babinec, Susan; Hagans, Patrick L.

2017-06-27

A system and a method for characterizing a dielectric material are provided. The system and method generally include applying an excitation signal to electrodes on opposing sides of the dielectric material to evaluate a property of the dielectric material. The method can further include measuring the capacitive impedance across the dielectric material, and determining a variation in the capacitive impedance with respect to either or both of a time domain and a frequency domain. The measured property can include pore size and surface imperfections. The method can still further include modifying a processing parameter as the dielectric material is formedmore » in response to the detected variations in the capacitive impedance, which can correspond to a non-uniformity in the dielectric material.« less

Very Low Frequency Breakdown Properties of Electrical Insulation Materials at Cryogenic Temperatures

NASA Astrophysics Data System (ADS)

Sauers, I.; Tuncer, E.; Polizos, G.; James, D. R.; Ellis, A. R.; Pace, M. O.

2010-04-01

For long cables or equipment with large capacitance it is not always possible to conduct high voltage withstand tests at 60 Hz due to limitations in charging currents of the power supply. Very low frequency (typically at a frequency of 0.1 Hz) has been used for conventional cables as a way of getting around the charging current limitation. For superconducting grid applications the same issues apply. However there is very little data at cryogenic temperatures on how materials perform at low frequency compared to 60 Hz and whether higher voltages should be applied when performing a high voltage acceptability test. Various materials including G10 (fiberglass reinforced plastic or FRP), Cryoflex™ (a tape insulation used in some high temperature superconducting cables), kapton (commonly used polyimide), polycarbonate, and polyetherimide, and in liquid nitrogen alone have been tested using a step method for frequencies of 60 Hz, 0.1 Hz, and dc. The dwell time at each step was chosen so that the aging factor would be the same in both the 60 Hz and 0.1 Hz tests. The data indicated that, while there is a small frequency dependence for liquid nitrogen, there are significant differences for the solid materials studied. Breakdown data for these materials and for model cables will be shown and discussed.

Ion energy distributions in a pulsed dual frequency inductively coupled discharge of Ar/CF{sub 4} and effect of duty ratio

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mishra, Anurag; Seo, Jin Seok; Kim, Tae Hyung

2015-08-15

Controlling time averaged ion energy distribution (IED) is becoming increasingly important in many plasma material processing applications for plasma etching and deposition. The present study reports the evolution of ion energy distributions with radio frequency (RF) powers in a pulsed dual frequency inductively discharge and also investigates the effect of duty ratio. The discharge has been sustained using two radio frequency, low (P{sub 2 MHz} = 2 MHz) and high (P{sub 13.56 MHz} = 13.56 MHz) at a pressure of 10 mTorr in argon (90%) and CF{sub 4} (10%) environment. The low frequency RF powers have been varied from 100 to 600 W, whereas the high frequency powers frommore » 200 to 1200 W. Typically, IEDs show bimodal structure and energy width (energy separation between the high and low energy peaks) increases with increasing P{sub 13.56 MHz}; however, it shows opposite trends with P{sub 2 MHz}. It has been observed that IEDs bimodal structure tends to mono-modal structure and energy peaks shift towards low energy side as duty ratio increases, keeping pulse power owing to mode transition (capacitive to inductive) constant.« less

Quality assurance: recommended guidelines for safe heating by capacitive-type heating technique to treat patients with metallic implants.

PubMed

Kato, Hirokazu; Kondo, Motoharu; Imada, Hajime; Kuroda, Masahiro; Kamimura, Yoshitsugu; Saito, Kazuyuki; Kuroda, Kagayaki; Ito, Koichi; Takahashi, Hideaki; Matsuki, Hidetoshi

2013-05-01

This article is a redissemination of the previous Japanese Quality Assurance Guide guidelines. Specific absorption rate and temperature distribution were investigated with respect to various aspects including metallic implant size and shape, insertion site, insertion direction, blood flow and heating power, and simulated results were compared with adverse reactions of patients treated by radio frequency capacitive-type heating. Recommended guidelines for safe heating methods for patients with metallic implants are presented based on our findings.

Raman spectrum method for characterization of pull-in voltages of graphene capacitive shunt switches

NASA Astrophysics Data System (ADS)

Li, Peng; You, Zheng; Cui, Tianhong

2012-12-01

An approach using Raman spectrum method is reported to measure pull-in voltages of graphene capacitive shunt switches. When the bias excesses the pull-in voltage, the Raman spectrum's intensity largely decreases. Two factors that contribute to the intensity reduction are investigated. Moreover, by monitoring the frequency shift of G peak and 2D band, we are able to detect the pull-in voltage and measure the strain change in graphene beams during switching.

Electrochemical and Capacitive Properties of Carbon Dots/Reduced Graphene Oxide Supercapacitors.

PubMed

Dang, Yong-Qiang; Ren, Shao-Zhao; Liu, Guoyang; Cai, Jiangtao; Zhang, Yating; Qiu, Jieshan

2016-11-14

There is much recent interest in graphene-based composite electrode materials because of their excellent mechanical strengths, high electron mobilities, and large specific surface areas. These materials are good candidates for applications in supercapacitors. In this work, a new graphene-based electrode material for supercapacitors was fabricated by anchoring carbon dots (CDs) on reduced graphene oxide (rGO). The capacitive properties of electrodes in aqueous electrolytes were systematically studied by galvanostatic charge-discharge measurements, cyclic voltammetry, and electrochemical impedance spectroscopy. The capacitance of rGO was improved when an appropriate amount of CDs were added to the material. The CD/rGO electrode exhibited a good reversibility, excellent rate capability, fast charge transfer, and high specific capacitance in 1 M H₂SO₄. Its capacitance was as high as 211.9 F/g at a current density of 0.5 A/g. This capacitance was 74.3% higher than that of a pristine rGO electrode (121.6 F/g), and the capacitance of the CD/rGO electrode retained 92.8% of its original value after 1000 cycles at a CDs-to-rGO ratio of 5:1.

Experimental Determination of Operating and Maximum Power Transfer Efficiencies at Resonant Frequency in a Wireless Power Transfer System using PP Network Topology with Top Coupling

NASA Astrophysics Data System (ADS)

Ramachandran, Hema; Pillai, K. P. P.; Bindu, G. R.

2017-08-01

A two-port network model for a wireless power transfer system taking into account the distributed capacitances using PP network topology with top coupling is developed in this work. The operating and maximum power transfer efficiencies are determined analytically in terms of S-parameters. The system performance predicted by the model is verified with an experiment consisting of a high power home light load of 230 V, 100 W and is tested for two forced resonant frequencies namely, 600 kHz and 1.2 MHz. The experimental results are in close agreement with the proposed model.

Power and stability limitations of resonant tunneling diodes

NASA Technical Reports Server (NTRS)

Kidner, C.; Mehdi, I.; East, J. R.; Haddad, G. I.

1990-01-01

Stability criteria for resonant tunneling diodes are investigated. Details of how extrinsic elements, such as series inductance and parallel capacitance, affect the stability are presented. A GaAs/AlAs/InGaAs/AlAs/GaAs double-barrier diode is investigated, showing the effect of different modes of low-frequency oscillation and the extrinsic circuit required for stabilization. The effect of device stabilization on high-frequency power generation is described. The main conclusions of the paper are: (1) stable resonant tunneling diode operation is difficult to obtain, and (2) the circuit and device conditions required for stable operation greatly reduce the amount of power that can be produced by these devices.

Ultra-low-noise preamplifier for condenser microphones.

PubMed

Starecki, Tomasz

2010-12-01

The paper presents the design of a low-noise preamplifier dedicated for condenser measurement microphones used in high sensitivity applications, in which amplifier noise is the main factor limiting sensitivity of the measurements. In measurement microphone preamplifiers, the dominant source of noise at lower frequencies is the bias resistance of the input stage. In the presented solution, resistors were connected to the input stage by means of switches. The switches are opened during measurements, which disconnects the resistors from the input stage and results in noise reduction. Closing the switches allows for fast charging of the microphone capacitance. At low frequencies the noise of the designed preamplifier is a few times lower in comparison to similar, commercially available instruments.

Nanocomposite of polyaniline nanorods grown on graphene nanoribbons for highly capacitive pseudocapacitors.

PubMed

Li, Lei; Raji, Abdul-Rahman O; Fei, Huilong; Yang, Yang; Samuel, Errol L G; Tour, James M

2013-07-24

A facile and cost-effective approach to the fabrication of a nanocomposite material of polyaniline (PANI) and graphene nanoribbons (GNRs) has been developed. The morphology of the composite was characterized by scanning electron microscopy, transmission electron microscopy, X-ray photoelectron microscopy, and X-ray diffraction analysis. The resulting composite has a high specific capacitance of 340 F/g and stable cycling performance with 90% capacitance retention over 4200 cycles. The high performance of the composite results from the synergistic combination of electrically conductive GNRs and highly capacitive PANI. The method developed here is practical for large-scale development of pseudocapacitor electrodes for energy storage.

Capacitance variation measurement method with a continuously variable measuring range for a micro-capacitance sensor

NASA Astrophysics Data System (ADS)

Lü, Xiaozhou; Xie, Kai; Xue, Dongfeng; Zhang, Feng; Qi, Liang; Tao, Yebo; Li, Teng; Bao, Weimin; Wang, Songlin; Li, Xiaoping; Chen, Renjie

2017-10-01

Micro-capacitance sensors are widely applied in industrial applications for the measurement of mechanical variations. The measurement accuracy of micro-capacitance sensors is highly dependent on the capacitance measurement circuit. To overcome the inability of commonly used methods to directly measure capacitance variation and deal with the conflict between the measurement range and accuracy, this paper presents a capacitance variation measurement method which is able to measure the output capacitance variation (relative value) of the micro-capacitance sensor with a continuously variable measuring range. We present the principles and analyze the non-ideal factors affecting this method. To implement the method, we developed a capacitance variation measurement circuit and carried out experiments to test the circuit. The result shows that the circuit is able to measure a capacitance variation range of 0-700 pF linearly with a maximum relative accuracy of 0.05% and a capacitance range of 0-2 nF (with a baseline capacitance of 1 nF) with a constant resolution of 0.03%. The circuit is proposed as a new method to measure capacitance and is expected to have applications in micro-capacitance sensors for measuring capacitance variation with a continuously variable measuring range.

Integrating DC/DC Conversion with Possible Reconfiguration within Submodule Solar Photovoltaic Systems

NASA Astrophysics Data System (ADS)

Huang, Peter Jen-Hung

This research first proposes a method to merge photovoltaic (PV) cells or PV panels within the internal components DC-DC converters. The purpose of this merged structure is to reconfigure the PV modules between series and parallel connections using high switching frequencies (hundreds of kHz). This leads to multi-levels of voltages and currents that become applied to the output filter of the converter. Further, this research introduces a concept of a switching cell that utilizes the reconfiguration of series and parallel connections in DC-DC converters. The switching occurs at high switching frequency and the switches can be integrated to be within the solar panels or in between the solar cells. The concept is generalized and applied to basic buck and boost topologies. As examples of the new types of converters: reconfigurable PV-buck and PV-boost converter topologies are presented. It is also possible to create other reconfigurable power converters: non-isolated and isolated topologies. Analysis, simulation and experimental verification for the reconfigurable PV-buck and PV-boost converters are presented extensively to illustrate proof of concept. Benefits and drawbacks of the new approach are discussed. The second part of this research proposes to utilize the internal solar cell capacitance and internal solar module wire parasitic inductances to replace the input capacitor and filter inductor in boost derived DC-DC converters for energy harvesting applications. High switching frequency (MHz) hard switched and resonant boost converters are proposed. Their analysis, simulation and experimental prototypes are presented. A specific proof-of-concept application is especially tested for foldable PV panels, which are known for their high internal wire inductance. The experimental converters successfully boost solar module voltage without adding any external input capacitance or filter inductor. Benefits and drawbacks of new proposed PV submodule integrated boost converters are discussed.

Modeling and Design of GaN High Electron Mobility Transistors and Hot Electron Transistors through Monte Carlo Particle-based Device Simulations

NASA Astrophysics Data System (ADS)

Soligo, Riccardo

In this work, the insight provided by our sophisticated Full Band Monte Carlo simulator is used to analyze the behavior of state-of-art devices like GaN High Electron Mobility Transistors and Hot Electron Transistors. Chapter 1 is dedicated to the description of the simulation tool used to obtain the results shown in this work. Moreover, a separate section is dedicated the set up of a procedure to validate to the tunneling algorithm recently implemented in the simulator. Chapter 2 introduces High Electron Mobility Transistors (HEMTs), state-of-art devices characterized by highly non linear transport phenomena that require the use of advanced simulation methods. The techniques for device modeling are described applied to a recent GaN-HEMT, and they are validated with experimental measurements. The main techniques characterization techniques are also described, including the original contribution provided by this work. Chapter 3 focuses on a popular technique to enhance HEMTs performance: the down-scaling of the device dimensions. In particular, this chapter is dedicated to lateral scaling and the calculation of a limiting cutoff frequency for a device of vanishing length. Finally, Chapter 4 and Chapter 5 describe the modeling of Hot Electron Transistors (HETs). The simulation approach is validated by matching the current characteristics with the experimental one before variations of the layouts are proposed to increase the current gain to values suitable for amplification. The frequency response of these layouts is calculated, and modeled by a small signal circuit. For this purpose, a method to directly calculate the capacitance is developed which provides a graphical picture of the capacitative phenomena that limit the frequency response in devices. In Chapter 5 the properties of the hot electrons are investigated for different injection energies, which are obtained by changing the layout of the emitter barrier. Moreover, the large signal characterization of the HET is shown for different layouts, where the collector barrier was scaled.

Analysis of high-k spacer on symmetric underlap DG-MOSFET with Gate Stack architecture

NASA Astrophysics Data System (ADS)

Das, Rahul; Chakraborty, Shramana; Dasgupta, Arpan; Dutta, Arka; Kundu, Atanu; Sarkar, Chandan K.

2016-09-01

This paper shows the systematic study of underlap double gate (U-DG) NMOSFETs with Gate Stack (GS) under the influence of high-k spacers. In highly scaled devices, underlap is used at the Source and Drain side so as to reduce the short channel effects (SCE's), however, it significantly reduces the on current due to the increased channel resistance. To overcome these drawbacks, the use of high-k spacers is projected as one of the remedies. In this paper, the analog performance of the devices is studied on the basis of parameters like transconductance (gm), transconductance generation factor (gm/Id) and intrinsic gain (gmro). The RF performance is analyzed on the merits of intrinsic capacitance (Cgd, Cgs), resistance (Rgd, Rgs), transport delay (τm), inductance (Lsd), cutoff frequency (fT), and the maximum frequency of oscillation (fmax). The circuit performance of the devices are studied by implementing the device as the driver MOSFET in a Single Stage Common Source Amplifier. The Gain Bandwidth Product (GBW) has been analyzed from the frequency response of the circuit.

Spectral Analysis and Metastable Absorption Measurements of High Pressure Capacitively and Inductively Coupled Radio-Frequency Argon-Helium Discharges

DTIC Science & Technology

2013-06-01

density of the s5 and s3 metastable states for different discharge parameters. The absorption data was fit to an approximated Voigt profile from which...pressures are required in order to have enough spin-orbit relaxation to maintain CW lasing without significant bottlenecking. There are many methods to...for just that [(5),(12)]. This method allows for a wide study of energy levels since the limiting factor is the sensitivity of the detector and modern

Study of HV Dielectrics for High Frequency Operation in Linear & Nonlinear Transmission Lines & Simulation & Development of Hybrid Nonlinear Lines for RF Generation

DTIC Science & Technology

2015-08-27

applied reverse voltage [8], [9]. In this report, the experimental results of a varactor diode NLTL built with 30 sections are presented. Besides, Spice ...capacitive line (NLCL) using commercial BT and PZT ceramic capacitors. Corresponding NLCL Spice simulation is provided for comparison with experimental...the output pulse. In special for PZT, Spice simulation of a line with respective linear capacitors illustrates its weak nonlinearity as the

Starter for inductively coupled plasma tube

DOEpatents

Hull, Donald E.; Bieniewski, Thomas M.

1988-01-01

A starter assembly is provided for use with an inductively coupled plasma (ICP) tube to reliably initate a plasma at internal pressures above about 30 microns. A conductive probe is inserted within the inductor coil about the tube and insulated from the tube shield assembly. A capacitive circuit is arranged for momentarily connecting a high voltage radio-frequency generator to the probe while simultaneously energizing the coil. When the plasma is initiated the probe is disconnected from the generator and electrically connected to the shield assembly for operation.

THz semiconductor-based front-end receiver technology for space applications

NASA Technical Reports Server (NTRS)

Mehdi, Imran; Siegel, Peter

2004-01-01

Advances in the design and fabrication of very low capacitance planar Schottky diodes and millimeter-wave power amplifiers, more accurate device and circuit models for commercial 3-D electromagnetic simulators, and the availability of both MEMS and high precision metal machining, have enabled RF engineers to extend traditional waveguide-based sensor and source technologies well into the TI-Iz frequency regime. This short paper will highlight recent progress in realizing THz space-qualified receiver front-ends based on room temperature semiconductor devices.

Modeling the Effects of Varying the Capacitance, Resistance, Temperature, and Frequency Dependence for HTS Josephson Junctions, DC SQUIDs and DC bi-SQUIDS

DTIC Science & Technology

2014-09-01

junction is a thin layer of insulating material sep- arating two superconductors that is thin enough for electrons to tunnel through. Two Josephson...can sense minute magnetic fields approaching 1015 Tesla. These SQUIDs can be arranged in arrays with different coupling schemes and parameter values to...different material and/or method on the bisecting Josephson junction for high temperature superconductor (HTS) YBa2Cu3O7 (YBCO) bi-SQUIDs. This

On the matter of building high-frequency amplifiers minimally influenced by interstage stray reactances

NASA Astrophysics Data System (ADS)

A, Volkov Y.

2017-01-01

The expedience of building wideband multistage amplifiers, the stages of which are connected with each other so, that the “modes of impedance mismatch” are realized, is justified. Those modes allow us to reduce considerably the sensitivity of amplifier transfer factors to the stray (constructional) capacitances and inductances of interstage circuits. The procedure of synthesizing the schematics of such amplifiers is proposed, the efficiency and clarity of which are provided by using the method of signal graphs.

A Novel Approach for a Low-Cost Deployable Antenna

NASA Technical Reports Server (NTRS)

Amend, Chris; Nurnberger, Michael; Oppenheimer, Paul; Koss, Steve; Purdy, Bill

2010-01-01

The Naval Research Laboratory (NRL) has designed, built, and fully qualified a low cost, low Passive Intermodulation (PIM) 12-foot (3.66-m) diameter deployable ultra high frequency (UHF) antenna for the Tacsat-4 program. The design utilized novel approaches in reflector material and capacitive coupling techniques. This paper discusses major design trades, unique design characteristics, and lessons learned from the development of the Tacsat 4 deployable antenna. This antenna development was sponsored by the Office of Naval Research.

High energy density supercapacitors from lignin derived submicron activated carbon fibers in aqueous electrolytes

NASA Astrophysics Data System (ADS)

Hu, Sixiao; Zhang, Sanliang; Pan, Ning; Hsieh, You-Lo

2014-12-01

Highly porous submicron activated carbon fibers (ACFs) were robustly generated from low sulfonated alkali lignin and fabricated into supercapacitors for capacitive energy storage. The hydrophilic and high specific surface ACFs exhibited large-size nanographites and good electrical conductivity to demonstrate outstanding electrochemical performance. ACFs from KOH activation, in particular, showed very high 344 F g-1 specific capacitance at low 1.8 mg cm-2 mass loading and 10 mV s-1 scan rate in aqueous electrolytes. Even at relatively high scan rate of 50 mV s-1 and mass loading of 10 mg cm-2, a decent specific capacitance of 196 F g-1 and a remarkable areal capacitance of 0.55 F cm-2 was obtained, leading to high energy density of 8.1 Wh kg-1 based on averaged electrodes mass. Furthermore, over 96% capacitance retention rates were achieved after 5000 charge/discharge cycles. Such excellent performance demonstrated great potential of lignin derived carbons for electrical energy storage.

Design of high-gain, wideband antenna using microwave hyperbolic metasurface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Yan, E-mail: yan.z@chula.ac.th

In this work, we apply hyperbolic metasurfaces (HMSs) to design high-gain and wideband antennas. It is shown that HMSs formed by a single layer of split-ring resonators (SRRs) can be excited to generate highly directive beams. In particular, we suggest two types of the SRR-HMS: a capacitively loaded SRR (CLSRR)-HMS and a substrate-backed double SRR (DSRR)-HMS. Both configurations ensure that the periodicity of the structures is sufficiently small for satisfying the effective medium theory. For the antenna design, we propose a two-layer-stacked configuration for the 2.4 GHz frequency band based on the DSRR-HMS excited by a folded monopole. Measurement resultsmore » confirm numerical simulations and demonstrate that an antenna gain of more than 5 dBi can be obtained for the frequency range of 2.1 - 2.6 GHz, with a maximum gain of 7.8 dBi at 2.4 GHz.« less

Archimedean Spiral Pairs with no Electrical Connections as a Passive Wireless Implantable Sensor

PubMed Central

Drazan, John F; Gunko, Aleksandra; Dion, Matthew; Abdoun, Omar; Cady, Nathaniel C; Connor, Kenneth A; Ledet, Eric H

2015-01-01

We have developed, modeled, fabricated, and tested a passive wireless sensor system that exhibits a linear frequency-displacement relationship. The displacement sensor is comprised of two anti-aligned Archimedean coils separated by an insulating dielectric layer. There are no electrical connections between the two coils and there are no onboard electronics. The two coils are inductively and capacitively coupled due to their close proximity. The sensor system is interrogated wirelessly by monitoring the return loss parameter from a vector network analyzer. The resonant frequency of the sensor is dependent on the displacement between the two coils. Due to changes in the inductive and capacitive coupling between the coils at different distances, the resonant frequency is modulated by coil separation. In a specified range, the frequency shift can be linearized with respect to coil separation. Batch fabrication techniques were used to fabricate copper coils for experimental testing with air as the dielectric. Through testing, we validated the performance of sensors as predicted within acceptable errors. Because of its simplicity, this displacement sensor has potential applications for in vivo sensing. PMID:27430033

Electrical and absorption properties of fresh cassava tubers and cassava starch

NASA Astrophysics Data System (ADS)

Harnsoongnoen, S.; Siritaratiwat, A.

2015-09-01

The objective of this study was to analyze the electrical and absorption properties of fresh cassava tubers and cassava starch at various frequencies using electric impedance spectroscopy and near-infrared spectroscopy, as well as determine the classification of the electrical parameters of both materials using the principle component analysis (PCA) method. All samples were measured at room temperature. The electrical and absorption parameters consisted of dielectric constant, dissipation factor, parallel capacitance, resistance, reactance, impedance and absorbance. It was found that the electrical and absorption properties of fresh cassava tubers and cassava starch were a function of frequency, and there were significant differences between the materials. The dielectric constant, parallel capacitance, resistance and impedance of fresh cassava tubers and cassava starch had similar dramatic decreases with increasing frequency. However, the reactance of both materials increased with an increasing frequency. The electrical parameters of both materials could be classified into two groups. Moreover, the dissipation factor and phase of impedance were the parameters that could be used in the separation of both materials. According to the absorbance patterns of the fresh cassava tubers and cassava starch, there were significant differences.

Experimental diagnostics and modeling of inductive phenomena at low frequencies in impedance spectra of proton exchange membrane fuel cells

NASA Astrophysics Data System (ADS)

Pivac, Ivan; Šimić, Boris; Barbir, Frano

2017-10-01

Representation of fuel cell processes by equivalent circuit models, involving resistance and capacitance elements representing activation losses on both anode and cathode in series with resistance representing ohmic losses, cannot capture and explain the inductive loop that may show up at low frequencies in Nyquist diagram representation of the electrochemical impedance spectra. In an attempt to explain the cause of the low-frequency inductive loop and correlate it with the processes within the fuel cell electrodes, a novel equivalent circuit model of a Proton Exchange Membrane (PEM) fuel cell has been proposed and experimentally verified here in detail. The model takes into account both the anode and the cathode, and has an additional resonant loop on each side, comprising of a resistance, capacitance and inductance in parallel representing the processes within the catalyst layer. Using these additional circuit elements, more accurate and better fits to experimental impedance data in the wide frequency range at different current densities, cell temperatures, humidity of gases, air flow stoichiometries and backpressures were obtained.

Note: Readout of a micromechanical magnetometer for the ITER fusion reactor.

PubMed

Rimminen, H; Kyynäräinen, J

2013-05-01

We present readout instrumentation for a MEMS magnetometer, placed 30 m away from the MEMS element. This is particularly useful when sensing is performed in high-radiation environment, where the semiconductors in the readout cannot survive. High bandwidth transimpedance amplifiers are used to cancel the cable capacitances of several nanofarads. A frequency doubling readout scheme is used for crosstalk elimination. Signal-to-noise ratio in the range of 60 dB was achieved and with sub-percent nonlinearity. The presented instrument is intended for the steady-state magnetic field measurements in the ITER fusion reactor.

The electrical behavior of GaAs-insulator interfaces - A discrete energy interface state model

NASA Technical Reports Server (NTRS)

Kazior, T. E.; Lagowski, J.; Gatos, H. C.

1983-01-01

The relationship between the electrical behavior of GaAs Metal Insulator Semiconductor (MIS) structures and the high density discrete energy interface states (0.7 and 0.9 eV below the conduction band) was investigated utilizing photo- and thermal emission from the interface states in conjunction with capacitance measurements. It was found that all essential features of the anomalous behavior of GaAs MIS structures, such as the frequency dispersion and the C-V hysteresis, can be explained on the basis of nonequilibrium charging and discharging of the high density discrete energy interface states.

New digital capacitive measurement system for blade clearances

NASA Astrophysics Data System (ADS)

Moenich, Marcel; Bailleul, Gilles

This paper presents a totally new concept for tip blade clearance evaluation in turbine engines. This system is able to detect exact 'measurands' even under high temperature and severe conditions like ionization. The system is based on a heavy duty probe head, a miniaturized thick-film hybrid electronic circuit and a signal processing unit for real time computing. The high frequency individual measurement values are digitally filtered and linearized in real time. The electronic is built in hybrid technology and therefore can be kept extremely small and robust, so that the system can be used on actual flights.

In Situ High-Level Nitrogen Doping into Carbon Nanospheres and Boosting of Capacitive Charge Storage in Both Anode and Cathode for a High-Energy 4.5 V Full-Carbon Lithium-Ion Capacitor.

PubMed

Sun, Fei; Liu, Xiaoyan; Wu, Hao Bin; Wang, Lijie; Gao, Jihui; Li, Hexing; Lu, Yunfeng

2018-05-02

To circumvent the imbalances of electrochemical kinetics and capacity between Li + storage anodes and capacitive cathodes for lithium-ion capacitors (LICs), we herein demonstrate an efficient solution by boosting the capacitive charge-storage contributions of carbon electrodes to construct a high-performance LIC. Such a strategy is achieved by the in situ and high-level doping of nitrogen atoms into carbon nanospheres (ANCS), which increases the carbon defects and active sites, inducing more rapidly capacitive charge-storage contributions for both Li + storage anodes and PF 6 - storage cathodes. High-level nitrogen-doping-induced capacitive enhancement is successfully evidenced by the construction of a symmetric supercapacitor using commercial organic electrolytes. Coupling a pre-lithiated ANCS anode with a fresh ANCS cathode enables a full-carbon LIC with a high operating voltage of 4.5 V and high energy and power densities thereof. The assembled LIC device delivers high energy densities of 206.7 and 115.4 Wh kg -1 at power densities of 0.225 and 22.5 kW kg -1 , respectively, as well as an unprecedented high-power cycling stability with only 0.0013% capacitance decay per cycle within 10 000 cycles at a high power output of 9 kW kg -1 .

Meta-metallic coils and resonators: Methods for high Q-value resonant geometries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mett, R. R.; Department of Physics and Chemistry, Milwaukee School of Engineering, Milwaukee, Wisconsin 53202; Sidabras, J. W.

A novel method of decreasing ohmic losses and increasing Q-value in metallic resonators at high frequencies is presented. The method overcomes the skin-depth limitation of rf current flow cross section. The method uses layers of conductive foil of thickness less than a skin depth and capacitive gaps between layers. The capacitive gaps can substantially equalize the rf current flowing in each layer, resulting in a total cross-sectional dimension for rf current flow many times larger than a skin depth. Analytic theory and finite-element simulations indicate that, for a variety of structures, the Q-value enhancement over a single thick conductor approachesmore » the ratio of total conductor thickness to skin depth if the total number of layers is greater than one-third the square of the ratio of total conductor thickness to skin depth. The layer number requirement is due to counter-currents in each foil layer caused by the surrounding rf magnetic fields. We call structures that exhibit this type of Q-enhancement “meta-metallic.” In addition, end effects due to rf magnetic fields wrapping around the ends of the foils can substantially reduce the Q-value for some classes of structures. Foil structures with Q-values that are substantially influenced by such end effects are discussed as are five classes of structures that are not. We focus particularly on 400 MHz, which is the resonant frequency of protons at 9.4 T. Simulations at 400 MHz are shown with comparison to measurements on fabricated structures. The methods and geometries described here are general for magnetic resonance and can be used at frequencies much higher than 400 MHz.« less

Meta-metallic coils and resonators: Methods for high Q-value resonant geometries

PubMed Central

Mett, R. R.; Hyde, J. S.

2016-01-01

A novel method of decreasing ohmic losses and increasing Q-value in metallic resonators at high frequencies is presented. The method overcomes the skin-depth limitation of rf current flow cross section. The method uses layers of conductive foil of thickness less than a skin depth and capacitive gaps between layers. The capacitive gaps can substantially equalize the rf current flowing in each layer, resulting in a total cross-sectional dimension for rf current flow many times larger than a skin depth. Analytic theory and finite-element simulations indicate that, for a variety of structures, the Q-value enhancement over a single thick conductor approaches the ratio of total conductor thickness to skin depth if the total number of layers is greater than one-third the square of the ratio of total conductor thickness to skin depth. The layer number requirement is due to counter-currents in each foil layer caused by the surrounding rf magnetic fields. We call structures that exhibit this type of Q-enhancement “meta-metallic.” In addition, end effects due to rf magnetic fields wrapping around the ends of the foils can substantially reduce the Q-value for some classes of structures. Foil structures with Q-values that are substantially influenced by such end effects are discussed as are five classes of structures that are not. We focus particularly on 400 MHz, which is the resonant frequency of protons at 9.4 T. Simulations at 400 MHz are shown with comparison to measurements on fabricated structures. The methods and geometries described here are general for magnetic resonance and can be used at frequencies much higher than 400 MHz. PMID:27587143

Development of compact rapid charging power supply for capacitive energy storage in pulsed power drivers.

PubMed

Sharma, Surender Kumar; Shyam, Anurag

2015-02-01

High energy capacitor bank is used for primary electrical energy storage in pulsed power drivers. The capacitors used in these pulsed power drivers have low inductance, low internal resistance, and less dc life, so it has to be charged rapidly and immediately discharged into the load. A series resonant converter based 45 kV compact power supply is designed and developed for rapid charging of the capacitor bank with constant charging current up to 150 mA. It is short circuit proof, and zero current switching technique is used to commute the semiconductor switch. A high frequency resonant inverter switching at 10 kHz makes the overall size small and reduces the switching losses. The output current of the power supply is limited by constant on-time and variable frequency switching control technique. The power supply is tested by charging the 45 kV/1.67 μF and 15 kV/356 μF capacitor banks. It has charged the capacitor bank up to rated voltage with maximum charging current of 150 mA and the average charging rate of 3.4 kJ/s. The output current of the power supply is limited by reducing the switching frequency at 5 kHz, 3.3 kHz, and 1.7 kHz and tested with 45 kV/1.67 μF capacitor bank. The protection circuit is included in the power supply for over current, under voltage, and over temperature. The design details and the experimental testing results of the power supply for resonant current, output current, and voltage traces of the power supply with capacitive, resistive, and short circuited load are presented and discussed.

Bivariate quadratic method in quantifying the differential capacitance and energy capacity of supercapacitors under high current operation

NASA Astrophysics Data System (ADS)

Goh, Chin-Teng; Cruden, Andrew

2014-11-01

Capacitance and resistance are the fundamental electrical parameters used to evaluate the electrical characteristics of a supercapacitor, namely the dynamic voltage response, energy capacity, state of charge and health condition. In the British Standards EN62391 and EN62576, the constant capacitance method can be further improved with a differential capacitance that more accurately describes the dynamic voltage response of supercapacitors. This paper presents a novel bivariate quadratic based method to model the dynamic voltage response of supercapacitors under high current charge-discharge cycling, and to enable the derivation of the differential capacitance and energy capacity directly from terminal measurements, i.e. voltage and current, rather than from multiple pulsed-current or excitation signal tests across different bias levels. The estimation results the author achieves are in close agreement with experimental measurements, within a relative error of 0.2%, at various high current levels (25-200 A), more accurate than the constant capacitance method (4-7%). The archival value of this paper is the introduction of an improved quantification method for the electrical characteristics of supercapacitors, and the disclosure of the distinct properties of supercapacitors: the nonlinear capacitance-voltage characteristic, capacitance variation between charging and discharging, and distribution of energy capacity across the operating voltage window.

Nickel oxide film with open macropores fabricated by surfactant-assisted anodic deposition for high capacitance supercapacitors.

PubMed

Wu, Mao-Sung; Wang, Min-Jyle

2010-10-07

Nickel oxide film with open macropores prepared by anodic deposition in the presence of surfactant shows a very high capacitance of 1110 F g(-1) at a scan rate of 10 mV s(-1), and the capacitance value reduces to 950 F g(-1) at a high scan rate of 200 mV s(-1).

Graphene/Polyaniline Aerogel with Superelasticity and High Capacitance as Highly Compression-Tolerant Supercapacitor Electrode

NASA Astrophysics Data System (ADS)

Lv, Peng; Tang, Xun; Zheng, Ruilin; Ma, Xiaobo; Yu, Kehan; Wei, Wei

2017-12-01

Superelastic graphene aerogel with ultra-high compressibility shows promising potential for compression-tolerant supercapacitor electrode. However, its specific capacitance is too low to meet the practical application. Herein, we deposited polyaniline (PANI) into the superelastic graphene aerogel to improve the capacitance while maintaining the superelasticity. Graphene/PANI aerogel with optimized PANI mass content of 63 wt% shows the improved specific capacitance of 713 F g-1 in the three-electrode system. And the graphene/PANI aerogel presents a high recoverable compressive strain of 90% due to the strong interaction between PANI and graphene. The all-solid-state supercapacitors were assembled to demonstrate the compression-tolerant ability of graphene/PANI electrodes. The gravimetric capacitance of graphene/PANI electrodes reaches 424 F g-1 and retains 96% even at 90% compressive strain. And a volumetric capacitance of 65.5 F cm-3 is achieved, which is much higher than that of other compressible composite electrodes. Furthermore, several compressible supercapacitors can be integrated and connected in series to enhance the overall output voltage, suggesting the potential to meet the practical application.

Graphene/Polyaniline Aerogel with Superelasticity and High Capacitance as Highly Compression-Tolerant Supercapacitor Electrode.

PubMed

Lv, Peng; Tang, Xun; Zheng, Ruilin; Ma, Xiaobo; Yu, Kehan; Wei, Wei

2017-12-19

Superelastic graphene aerogel with ultra-high compressibility shows promising potential for compression-tolerant supercapacitor electrode. However, its specific capacitance is too low to meet the practical application. Herein, we deposited polyaniline (PANI) into the superelastic graphene aerogel to improve the capacitance while maintaining the superelasticity. Graphene/PANI aerogel with optimized PANI mass content of 63 wt% shows the improved specific capacitance of 713 F g -1 in the three-electrode system. And the graphene/PANI aerogel presents a high recoverable compressive strain of 90% due to the strong interaction between PANI and graphene. The all-solid-state supercapacitors were assembled to demonstrate the compression-tolerant ability of graphene/PANI electrodes. The gravimetric capacitance of graphene/PANI electrodes reaches 424 F g -1 and retains 96% even at 90% compressive strain. And a volumetric capacitance of 65.5 F cm -3 is achieved, which is much higher than that of other compressible composite electrodes. Furthermore, several compressible supercapacitors can be integrated and connected in series to enhance the overall output voltage, suggesting the potential to meet the practical application.

Tribotronic Tuning Diode for Active Analog Signal Modulation.

PubMed

Zhou, Tao; Yang, Zhi Wei; Pang, Yaokun; Xu, Liang; Zhang, Chi; Wang, Zhong Lin

2017-01-24

Realizing active interaction with external environment/stimuli is a great challenge for current electronics. In this paper, a tribotronic tuning diode (TTD) is proposed by coupling a variable capacitance diode and a triboelectric nanogenerator in free-standing sliding mode. When the friction layer is sliding on the device surface for electrification, a reverse bias voltage is created and applied to the diode for tuning the junction capacitance. When the sliding distance increases from 0 to 25 mm, the capacitance of the TTD decreases from about 39 to 8 pF. The proposed TTD has been integrated into analog circuits and exhibited excellent performances in frequency modulation, phase shift, and filtering by sliding a finger. This work has demonstrated tunable diode and active analog signal modulation by tribotronics, which has great potential to replace ordinary variable capacitance diodes in various practical applications such as signal processing, electronic tuning circuits, precise tuning circuits, active sensor networks, electronic communications, remote controls, flexible electronics, etc.

Ultrasensitive and label-free detection of pathogenic avian influenza DNA by using CMOS impedimetric sensors.

PubMed

Lai, Wei-An; Lin, Chih-Heng; Yang, Yuh-Shyong; Lu, Michael S-C

2012-05-15

This work presents miniaturized CMOS (complementary metal oxide semiconductor) sensors for non-faradic impedimetric detection of AIV (avian influenza virus) oligonucleotides. The signal-to-noise ratio is significantly improved by monolithic sensor integration to reduce the effect of parasitic capacitances. The use of sub-μm interdigitated microelectrodes is also beneficial for promoting the signal coupling efficiency. Capacitance changes associated with surface modification, functionalization, and DNA hybridization were extracted from the measured frequency responses based on an equivalent-circuit model. Hybridization of the AIV H5 capture and target DNA probes produced a capacitance reduction of -13.2 ± 2.1% for target DNA concentrations from 1 fM to 10 fM, while a capacitance increase was observed when H5 target DNA was replaced with non-complementary H7 target DNA. With the demonstrated superior sensing capabilities, this miniaturized CMOS sensing platform shows great potential for label-free point-of-care biosensing applications. Copyright © 2012 Elsevier B.V. All rights reserved.

Electrical capacitance volume tomography with high contrast dielectrics using a cuboid sensor geometry

NASA Astrophysics Data System (ADS)

Nurge, Mark A.

2007-05-01

An electrical capacitance volume tomography system has been created for use with a new image reconstruction algorithm capable of imaging high contrast dielectric distributions. The electrode geometry consists of two 4 × 4 parallel planes of copper conductors connected through custom built switch electronics to a commercially available capacitance to digital converter. Typical electrical capacitance tomography (ECT) systems rely solely on mutual capacitance readings to reconstruct images of dielectric distributions. This paper presents a method of reconstructing images of high contrast dielectric materials using only the self-capacitance measurements. By constraining the unknown dielectric material to one of two values, the inverse problem is no longer ill-determined. Resolution becomes limited only by the accuracy and resolution of the measurement circuitry. Images were reconstructed using this method with both synthetic and real data acquired using an aluminium structure inserted at different positions within the sensing region. Comparisons with standard two-dimensional ECT systems highlight the capabilities and limitations of the electronics and reconstruction algorithm.

Electrical capacitance volume tomography of high contrast dielectrics using a cuboid geometry

NASA Astrophysics Data System (ADS)

Nurge, Mark A.

An Electrical Capacitance Volume Tomography system has been created for use with a new image reconstruction algorithm capable of imaging high contrast dielectric distributions. The electrode geometry consists of two 4 x 4 parallel planes of copper conductors connected through custom built switch electronics to a commercially available capacitance to digital converter. Typical electrical capacitance tomography (ECT) systems rely solely on mutual capacitance readings to reconstruct images of dielectric distributions. This dissertation presents a method of reconstructing images of high contrast dielectric materials using only the self capacitance measurements. By constraining the unknown dielectric material to one of two values, the inverse problem is no longer ill-determined. Resolution becomes limited only by the accuracy and resolution of the measurement circuitry. Images were reconstructed using this method with both synthetic and real data acquired using an aluminum structure inserted at different positions within the sensing region. Comparisons with standard two dimensional ECT systems highlight the capabilities and limitations of the electronics and reconstruction algorithm.

High-rate in-plane micro-supercapacitors scribed onto photo paper using in situ femtolaser-reduced graphene oxide/Au nanoparticle microelectrodes

DOE PAGES

Li, Ruozhou; Peng, Rui; Tumuluri, Uma; ...

2016-02-11

Direct laser-reduction of graphene oxide (GO), as a lithography-free approach, has been proven effective in manufacturing in-plane micro-supercapacitors (MSCs) with fast ion diffusion. However, the power density and the charge/discharge rate are still limited by the relatively low conductivity of electrodes. Here, we report a facile approach by exploiting femtolaser in situ reduction of the hydrated GO and chloroauric acid (HAuCl 4) nanocomposite simultaneously, which incorporates both the patterning of rGO electrodes and the fabrication of Au current collectors in a single step. These flexible MSCs boast achievements of one-hundred fold increase in electrode conductivities of up to 1.1 ×more » 10 6 S m –1, which provide superior rate capability (50% for the charging rate increase from 0.1 V s –1 to 100 V s –1), sufficiently high frequency responses (362 Hz, 2.76 ms time constant), and large specific capacitances of 0.77 mF cm –2 (17.2 F cm –3 for volumetric capacitance) at 1 V s –1, and 0.46 mF cm –2 (10.2 F cm –3) at 100 V s –1. The use of photo paper substrates enables the flexibility of this fabrication protocol. Moreover, proof-of-concept 3D MSCs are demonstrated with enhanced areal capacitance (up to 3.84 mF cm –2 at 1 V s –1) while keeping high rate capabilities. As a result, this prototype of all solid-state MSCs demonstrates the broad range of potentials of thin-film based energy storage device applications for flexible, portable, and wearable electronic devices that require a fast charge/discharge rate and high power density.« less

High-rate in-plane micro-supercapacitors scribed onto photo paper using in situ femtolaser-reduced graphene oxide/Au nanoparticle microelectrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Ruozhou; Peng, Rui; Tumuluri, Uma

Direct laser-reduction of graphene oxide (GO), as a lithography-free approach, has been proven effective in manufacturing in-plane micro-supercapacitors (MSCs) with fast ion diffusion. However, the power density and the charge/discharge rate are still limited by the relatively low conductivity of electrodes. Here, we report a facile approach by exploiting femtolaser in situ reduction of the hydrated GO and chloroauric acid (HAuCl 4) nanocomposite simultaneously, which incorporates both the patterning of rGO electrodes and the fabrication of Au current collectors in a single step. These flexible MSCs boast achievements of one-hundred fold increase in electrode conductivities of up to 1.1 ×more » 10 6 S m –1, which provide superior rate capability (50% for the charging rate increase from 0.1 V s –1 to 100 V s –1), sufficiently high frequency responses (362 Hz, 2.76 ms time constant), and large specific capacitances of 0.77 mF cm –2 (17.2 F cm –3 for volumetric capacitance) at 1 V s –1, and 0.46 mF cm –2 (10.2 F cm –3) at 100 V s –1. The use of photo paper substrates enables the flexibility of this fabrication protocol. Moreover, proof-of-concept 3D MSCs are demonstrated with enhanced areal capacitance (up to 3.84 mF cm –2 at 1 V s –1) while keeping high rate capabilities. As a result, this prototype of all solid-state MSCs demonstrates the broad range of potentials of thin-film based energy storage device applications for flexible, portable, and wearable electronic devices that require a fast charge/discharge rate and high power density.« less

Characterization of high-pressure capacitively coupled hydrogen plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nunomura, S.; Kondo, M.

2007-11-01

Capacitively coupled very-high-frequency hydrogen plasmas have been systematically diagnosed in a wide range of a gas pressure from 5 mTorr to 10 Torr. The plasma parameters, ion species, and ion energy distributions (IEDs) are measured using a Langmuir probe, optical emission spectroscopy, and energy filtered mass spectrometer. The measurement results show that the ion species in a hydrogen plasma is determined from ionization channels and subsequent ion-molecule reactions. The ions are dominated by H{sub 2}{sup +} at a less-collisional condition of < or approx. 20 mTorr, whereas those are dominated by H{sub 3}{sup +} at a collisional condition of >more » or approx. 20 mTorr. The IED is determined by both the sheath potential drop and ion-neutral collisions in the plasma sheath. The IED is broadened for a collisional sheath at > or approx. 0.3 Torr and the ion bombardment energy is lowered. For high-pressure discharge operated at {approx_equal}10 Torr, plasmas are characterized by a low electron temperature of {approx_equal}0.8 eV and a low ion bombardment energy of < or approx. 15 eV.« less

Effects of Frequency Dependence of the External Quantum Efficiency of Perovskite Solar Cells.

PubMed

Ravishankar, Sandheep; Aranda, Clara; Boix, Pablo P; Anta, Juan A; Bisquert, Juan; Garcia-Belmonte, Germà

2018-06-07

Perovskite solar cells are known to show very long response time scales, on the order of milliseconds to seconds. This generates considerable doubt over the validity of the measured external quantum efficiency (EQE) and consequently the estimation of the short-circuit current density. We observe a variation as high as 10% in the values of the EQE of perovskite solar cells for different optical chopper frequencies between 10 and 500 Hz, indicating a need to establish well-defined protocols of EQE measurement. We also corroborate these values and obtain new insights regarding the working mechanisms of perovskite solar cells from intensity-modulated photocurrent spectroscopy measurements, identifying the evolution of the EQE over a range of frequencies, displaying a singular reduction at very low frequencies. This reduction in EQE is ascribed to additional resistive contributions hindering charge extraction in the perovskite solar cell at short-circuit conditions, which are delayed because of the concomitant large low-frequency capacitance.

Space-charge behavior of 'Thin-MOS' diodes with MBE-grown silicon films

NASA Technical Reports Server (NTRS)

Lieneweg, U.; Bean, J. C.

1984-01-01

Basic theoretical and experimental characteristics of a novel 'Thin-MOS' technology, which has promising aspects for integrated high-frequency devices up to several hundred gigahertz are presented. The operation of such devices depends on charge injection into undoped silicon layers of about 1000-A thickness, grown by molecular beam epitaxy on heavily doped substrates, and isolation by thermally grown oxides of about 100-A thickness. Capacitance-voltage characteristics measured at high and low frequencies agree well with theoretical ones derived from uni and ambipolar space-charge models. It is concluded that after oxidation the residual doping in the epilayer is less than approximately 10 to the 16th/cu cm and rises by 3 orders of magnitude at the substrate interface within less than 100 A and that interface states at the oxide interface can be kept low.

Determining the frequency, depth and velocity of preferential flow by high frequency soil moisture monitoring

NASA Astrophysics Data System (ADS)

Hardie, Marcus; Lisson, Shaun; Doyle, Richard; Cotching, William

2013-01-01

Preferential flow in agricultural soils has been demonstrated to result in agrochemical mobilisation to shallow ground water. Land managers and environmental regulators need simple cost effective techniques for identifying soil - land use combinations in which preferential flow occurs. Existing techniques for identifying preferential flow have a range of limitations including; often being destructive, non in situ, small sampling volumes, or are subject to artificial boundary conditions. This study demonstrated that high frequency soil moisture monitoring using a multi-sensory capacitance probe mounted within a vertically rammed access tube, was able to determine the occurrence, depth, and wetting front velocity of preferential flow events following rainfall. Occurrence of preferential flow was not related to either rainfall intensity or rainfall amount, rather preferential flow occurred when antecedent soil moisture content was below 226 mm soil moisture storage (0-70 cm). Results indicate that high temporal frequency soil moisture monitoring may be used to identify soil type - land use combinations in which the presence of preferential flow increases the risk of shallow groundwater contamination by rapid transport of agrochemicals through the soil profile. However use of high frequency based soil moisture monitoring to determine agrochemical mobilisation risk may be limited by, inability to determine the volume of preferential flow, difficulty observing macropore flow at high antecedent soil moisture content, and creation of artificial voids during installation of access tubes in stony soils.

Quasi-Optical Network Analyzers and High-Reliability RF MEMS Switched Capacitors

NASA Astrophysics Data System (ADS)

Grichener, Alexander

The thesis first presents a 2-port quasi-optical scalar network analyzer consisting of a transmitter and receiver both built in planar technology. The network analyzer is based on a Schottky-diode mixer integrated inside a planar antenna and fed differentially by a CPW transmission line. The antenna is placed on an extended hemispherical high-resistivity silicon substrate lens. The LO signal is swept from 3-5 GHz and high-order harmonic mixing in both up- and down- conversion mode is used to realize the 15-50 GHz RF bandwidth. The network analyzer resulted in a dynamic range of greater than 40 dB and was successfully used to measure a frequency selective surface with a second-order bandpass response. Furthermore, the system was built with circuits and components for easy scaling to millimeter-wave frequencies which is the primary motivation for this work. The application areas for a millimeter and submillimeter-wave network analyzer include material characterization and art diagnostics. The second project presents several RF MEMS switched capacitors designed for high-reliability operation and suitable for tunable filters and reconfigurable networks. The first switched-capacitor resulted in a digital capacitance ratio of 5 and an analog capacitance ratio of 5-9. The analog tuning of the down-state capacitance is enhanced by a positive vertical stress gradient in the the beam, making it ideal for applications that require precision tuning. A thick electroplated beam resulted in Q greater than 100 at C to X-band frequencies, and power handling of 0.6-1.1 W. The design also minimized charging in the dielectric, resulting in excellent reliability performance even under hot-switched and high power (1 W) conditions. The second switched-capacitor was designed without any dielectric to minimize charging. The device was hot-switched at 1 W of RF power for greater than 11 billion cycles with virtually no change in the C-V curve. The final project presents a 7-channel channelizer based on the mammalian cochlea. The cochlea is an amazing channelizing filter, covering three decades of bandwidth with over 3,000 channels in a very small physical space. Using a simplified mechanical cochlear model and its electrical analogue, a design method is demonstrated for RF and microwave channelizers that retains the desirable features of the cochlea including the ability to cascade a large number of channels (for multiple-octave frequency coverage), and a high-order stop-band rejection. A 6-pole response is synthesized in each channel using the top-C coupled topology. A constant absolute 3 dB bandwidth of around 4.3 MHz and an insertion loss of around 3.9 dB is measured in each channel. A high isolation (greater than 35 dB) is achieved between adjacent channels. A reflection loss of greater than 15 dB is measured at the input port over the entire channelizer bandwidth. Application areas for the demonstrated channelizer include wideband, contiguous-channel receivers for signal intelligence or spectral analysis.

Scalable fabrication of self-aligned graphene transistors and circuits on glass.

PubMed

Liao, Lei; Bai, Jingwei; Cheng, Rui; Zhou, Hailong; Liu, Lixin; Liu, Yuan; Huang, Yu; Duan, Xiangfeng

2012-06-13

Graphene transistors are of considerable interest for radio frequency (rf) applications. High-frequency graphene transistors with the intrinsic cutoff frequency up to 300 GHz have been demonstrated. However, the graphene transistors reported to date only exhibit a limited extrinsic cutoff frequency up to about 10 GHz, and functional graphene circuits demonstrated so far can merely operate in the tens of megahertz regime, far from the potential the graphene transistors could offer. Here we report a scalable approach to fabricate self-aligned graphene transistors with the extrinsic cutoff frequency exceeding 50 GHz and graphene circuits that can operate in the 1-10 GHz regime. The devices are fabricated on a glass substrate through a self-aligned process by using chemical vapor deposition (CVD) grown graphene and a dielectrophoretic assembled nanowire gate array. The self-aligned process allows the achievement of unprecedented performance in CVD graphene transistors with a highest transconductance of 0.36 mS/μm. The use of an insulating substrate minimizes the parasitic capacitance and has therefore enabled graphene transistors with a record-high extrinsic cutoff frequency (> 50 GHz) achieved to date. The excellent extrinsic cutoff frequency readily allows configuring the graphene transistors into frequency doubling or mixing circuits functioning in the 1-10 GHz regime, a significant advancement over previous reports (∼20 MHz). The studies open a pathway to scalable fabrication of high-speed graphene transistors and functional circuits and represent a significant step forward to graphene based radio frequency devices.

Application of RF varactor using Ba(x)Sr(1-x)TiO3/TiO2/HR-Si substrate for reconfigurable radio.

PubMed

Kim, Ki-Byoung; Park, Chul-Soon

2007-11-01

In this paper, the potential feasibility of integrating Ba(x)Sr(1-x)TiO3 (BST) films into Si wafer by adopting tunable interdigital capacitor (IDC) with TiO2 thin film buffer layer and a RF tunable active bandpass filter (BPF) using BST based capacitor are proposed. TiO2 as a buffer layer is grown onto Si substrate by atomic layer deposition (ALD) and the interdigital capacitor on BST(500 nm)/TiO2 (50 nm)/HR-Si is fabricated. BST interdigital tunable capacitor integrated on HR-Si substrate with high tunability and low loss tangent are characterized for their microwave performances. BST/TiO2/HR-Si IDC shows much enhanced tunability values of 40% and commutation quality factor (CQF) of 56.71. A resonator consists of an active capacitance circuit together with a BST varactor. The active capacitor is made of a field effect transistor (FET) that exhibits negative resistance as well as capacitance. The measured second order active BPF shows bandwidth of 110 MHz, insertion loss of about 1 dB at the 1.81 GHz center frequency and tuning frequency of 230 MHz (1.81-2.04 GHz).

Electro-optic modulator based gate transient suppression for sine-wave gated InGaAs/InP single photon avalanche photodiode

NASA Astrophysics Data System (ADS)

Zhang, Yixin; Zhang, Xuping; Shi, Yuanlei; Ying, Zhoufeng; Wang, Shun

2014-06-01

Capacitive gate transient noise has been problematic for the high-speed single photon avalanche photodiode (SPAD), especially when the operating frequency extends to the gigahertz level. We proposed an electro-optic modulator based gate transient noise suppression method for sine-wave gated InGaAs/InP SPAD. With the modulator, gate transient is up-converted to its higher-order harmonics that can be easily removed by low pass filtering. The proposed method enables online tuning of the operating rate without modification of the hardware setup. At 250 K, detection efficiency of 14.7% was obtained with 4.8×10-6 per gate dark count and 3.6% after-pulse probabilities for 1550-nm optical signal under 1-GHz gating frequency. Experimental results have shown that the performance of the detector can be maintained within a designated frequency range from 0.97 to 1.03 GHz, which is quite suitable for practical high-speed SPAD applications operated around the gigahertz level.

HIGH FREQUENCY POWER TRANSMISSION LINE FOR CYCLOTRONS AND THE LIKE

DOEpatents

Armstrong, W.J.

1954-04-20

High-frequency power transmission systems, particularly a stacked capacitance alternating power current transmission line wherein maximum utilization of the effective conductios skin of the line conductors is achieved while enabling a low impedance to be obtained are reported. The transmission line consists of a number of flat metal strips with interleaved dielectric strips. The metal dielectric strips are coiled spirally with the axis of the spiral extending along the length of the strips, and the alternating metal strips at the output end have outwardly extending aligned lugs which are directly strapped together and connected to the respective terminals on the load. At the input end of the transmission line, similarly, the alternate metal strips are directly strapped together and connected to an altereating current source. With the arrangement described each metal strip conducts on both sides, so that the metal strips are designed to have a thickness corresponding to twice the depth of the "skin effect" conducting lamina of each conductor at the source frequency.

Origin of Negative Capacitance in Bipolar Organic Diodes

NASA Astrophysics Data System (ADS)

Niu, Quan; Crǎciun, N. Irina; Wetzelaer, Gert-Jan A. H.; Blom, Paul W. M.

2018-03-01

Negative differential capacitance (NC) occurring at low frequencies in organic light-emitting diodes (OLEDs) is a poorly understood phenomenon. We study the origin of the NC effect by systematically varying the number of electron traps in OLEDs based on the polymeric semiconductor poly(p -phenylene vinylene). Increasing the electron trap density enhances the NC effect. The magnitude and observed decrease of the relaxation time is consistent with the (inverse) rate of trap-assisted recombination. The absence of NC in a nearly trap-free light-emitting diode unambiguously shows that trap-assisted recombination is the responsible mechanism for the negative contribution to the capacitance in bipolar organic diodes. Our results reveal that the NC effect can be exploited to quantitatively determine the number of traps in organic semiconductors in a nondestructive fashion.

Carbon-ionogel supercapacitors for integrated microelectronics.

PubMed

Leung, Greg; Smith, Leland; Lau, Jonathan; Dunn, Bruce; Chui, Chi On

2016-01-22

To exceed the performance limits of dielectric capacitors in microelectronic circuit applications, we design and demonstrate on-chip coplanar electric double-layer capacitors (EDLCs), or supercapacitors, employing carbon-coated gold electrodes with ionogel electrolyte. The formation of carbon-coated microelectrodes is accomplished by solution processing and results in a ten-fold increase in EDLC capacitance compared to bare gold electrodes without carbon. At frequencies up to 10 Hz, an areal capacitance of 2.1 pF μm(-2) is achieved for coplanar carbon-ionogel EDLCs with 10 μm electrode gaps and 0.14 mm(2) electrode area. Our smallest devices, comprised of 5 μm electrode gaps and 80 μm(2) of active electrode area, reach areal capacitance values of ∼0.3 pF μm(-2) at frequencies up to 1 kHz, even without carbon. To our knowledge, these are the highest reported values to date for on-chip EDLCs with sub-mm(2) areas. A physical EDLC model is developed through the use of computer-aided simulations for design exploration and optimization of coplanar EDLCs. Through modeling and comparison with experimental data, we highlight the importance of reducing the electrode gap and electrolyte resistance to achieve maximum performance from on-chip EDLCs.

Fabricating capacitive micromachined ultrasonic transducers with a novel silicon-nitride-based wafer bonding process.

PubMed

Logan, Andrew; Yeow, John T W

2009-05-01

We report the fabrication and experimental testing of 1-D 23-element capacitive micromachined ultrasonic transducer (CMUT) arrays that have been fabricated using a novel wafer-bonding process whereby the membrane and the insulation layer are both silicon nitride. The membrane and cell cavities are deposited and patterned on separate wafers and fusion-bonded in a vacuum environment to create CMUT cells. A user-grown silicon-nitride membrane layer avoids the need for expensive silicon-on-insulator (SOI) wafers, reduces parasitic capacitance, and reduces dielectric charging. It allows more freedom in selecting the membrane thickness while also providing the benefits of wafer-bonding fabrication such as excellent fill factor, ease of vacuum sealing, and a simplified fabrication process when compared with the more standard sacrificial release process. The devices fabricated have a cell diameter of 22 microm, a membrane thickness of 400 nm, a gap depth of 150 nm, and an insulation thickness of 250 nm. The resonant frequency of the CMUT in air is 17 MHz and has an attenuation compensated center frequency of approximately 9 MHz in immersion with a -6 dB fractional bandwidth of 123%. This paper presents the fabrication process and some characterization results.

Carbon-ionogel supercapacitors for integrated microelectronics

NASA Astrophysics Data System (ADS)

Leung, Greg; Smith, Leland; Lau, Jonathan; Dunn, Bruce; Chui, Chi On

2016-01-01

To exceed the performance limits of dielectric capacitors in microelectronic circuit applications, we design and demonstrate on-chip coplanar electric double-layer capacitors (EDLCs), or supercapacitors, employing carbon-coated gold electrodes with ionogel electrolyte. The formation of carbon-coated microelectrodes is accomplished by solution processing and results in a ten-fold increase in EDLC capacitance compared to bare gold electrodes without carbon. At frequencies up to 10 Hz, an areal capacitance of 2.1 pF μm-2 is achieved for coplanar carbon-ionogel EDLCs with 10 μm electrode gaps and 0.14 mm2 electrode area. Our smallest devices, comprised of 5 μm electrode gaps and 80 μm2 of active electrode area, reach areal capacitance values of ˜0.3 pF μm-2 at frequencies up to 1 kHz, even without carbon. To our knowledge, these are the highest reported values to date for on-chip EDLCs with sub-mm2 areas. A physical EDLC model is developed through the use of computer-aided simulations for design exploration and optimization of coplanar EDLCs. Through modeling and comparison with experimental data, we highlight the importance of reducing the electrode gap and electrolyte resistance to achieve maximum performance from on-chip EDLCs.

AC Resonant charger with charge rate unrelated to primary power frequency

DOEpatents

Watson, Harold

1982-01-01

An AC resonant charger for a capacitive load, such as a PFN, is provided with a variable repetition rate unrelated to the frequency of a multi-phase AC power source by using a control unit to select and couple the phase of the power source to the resonant charger in order to charge the capacitive load with a phase that is the next to begin a half cycle. For optimum range in repetition rate and increased charging voltage, the resonant charger includes a step-up transformer and full-wave rectifier. The next phase selected may then be of either polarity, but is always selected to be of a polarity opposite the polarity of the last phase selected so that the transformer core does not saturate. Thyristors are used to select and couple the correct phase just after its zero crossover in response to a sharp pulse generated by a zero-crossover detector. The thyristor that is turned on then automatically turns off after a full half cycle of its associated phase input. A full-wave rectifier couples the secondary winding of the transformer to the load so that the load capacitance is always charged with the same polarity.

Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

NASA Astrophysics Data System (ADS)

An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

2016-11-01

Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application

NASA Astrophysics Data System (ADS)

Jiahui, Zhou; Hudong, Chang; Honggang, Liu; Guiming, Liu; Wenjun, Xu; Qi, Li; Simin, Li; Zhiyi, He; Haiou, Li

2015-05-01

The impact of various thicknesses of Al2O3 metal—insulator—metal (MIM) capacitors on direct current and radio frequency (RF) characteristics is investigated. For 20 nm Al2O3, the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm2 and acceptable voltage coefficients of capacitance of 681 ppm/V2 at 1 MHz. An outstanding VCC-α of 74 ppm/V2 at 1 MHz, resonance frequency of 8.2 GHz and Q factor of 41 at 2 GHz are obtained by 100 nm Al2O3 MIM capacitors. High-performance MIM capacitors using GaAs process and atomic layer deposition Al2O3 could be very promising candidates for GaAs RFIC applications. Project supported by the National Natural Science Foundation of China (Nos. 61274077, 61474031), the Guangxi Natural Science Foundation (No. 2013GXNSFGA019003), the Guangxi Department of Education Project (No. 201202ZD041), the Guilin City Technology Bureau (Nos. 20120104-8, 20130107-4), the China Postdoctoral Science Foundation Funded Project (Nos. 2012M521127, 2013T60566), the National Basic Research Program of China (Nos. 2011CBA00605, 2010CB327501), the Innovation Project of GUET Graduate Education (Nos. GDYCSZ201448, GDYCSZ201449), the State Key Laboratory of Electronic Thin Films and Integrated Devices, UESTC (No. KFJJ201205), and the Guilin City Science and Technology Development Project (Nos. 20130107-4, 20120104-8).

Chemical vapor detection using a capacitive micromachined ultrasonic transducer.

PubMed

Lee, Hyunjoo J; Park, Kwan Kyu; Kupnik, Mario; Oralkan, O; Khuri-Yakub, Butrus T

2011-12-15

Distributed sensing of gas-phase chemicals using highly sensitive and inexpensive sensors is of great interest for many defense and consumer applications. In this paper we present ppb-level detection of dimethyl methylphosphonate (DMMP), a common simulant for sarin gas, with a ppt-level resolution using an improved capacitive micromachined ultrasonic transducer (CMUT) as a resonant chemical sensor. The improved CMUT operates at a higher resonant frequency of 47.7 MHz and offers an improved mass sensitivity of 48.8 zg/Hz/μm(2) by a factor of 2.7 compared to the previous CMUT sensors developed. A low-noise oscillator using the CMUT resonant sensor as the frequency-selective device was developed for real-time sensing, which exhibits an Allan deviation of 1.65 Hz (3σ) in the presence of a gas flow; this translates into a mass resolution of 80.5 zg/μm(2). The CMUT resonant sensor is functionalized with a 50-nm thick DKAP polymer developed at Sandia National Laboratory for dimethyl methylphosphonate (DMMP) detection. To demonstrate ppb-level detection of the improved chemical sensor system, the sensor performance was tested at a certified lab (MIT Lincoln Laboratory), which is equipped with an experimental chemical setup that reliably and accurately delivers a wide range of low concentrations down to 10 ppb. We report a high volume sensitivity of 34.5 ± 0.79 pptv/Hz to DMMP and a good selectivity of the polymer to DMMP with respect to dodecane and 1-octanol.

A multi-frequency impedance analysing instrument for eddy current testing

NASA Astrophysics Data System (ADS)

Yin, W.; Dickinson, S. J.; Peyton, A. J.

2006-02-01

This paper presents the design of a high-performance multi-frequency impedance analysing instrument (MFIA) for eddy current testing which has been developed primarily for monitoring a steel production process using an inductive sensor. The system consists of a flexible multi-frequency waveform generator and a voltage/current measurement unit. The impedance of the sensor is obtained by cross-spectral analysis of the current and voltage signals. The system contains high-speed digital-to-analogue, analogue-to-digital converters and dual DSPs with one for control and interface and one dedicated to frequency-spectra analysis using fast Fourier transformation (FFT). The frequency span of the signal that can be analysed ranges from 1 kHz to 8 MHz. The system also employs a high-speed serial port interface (USB) to communicate with a personal computer (PC) and to allow for fast transmission of data and control commands. Overall, the system is capable of delivering over 250 impedance spectra per second. Although the instrument has been developed mainly for use with an inductive sensor, the system is not restricted to inductive measurement. The flexibility of the design architecture is demonstrated with capacitive and resistive measurements by using appropriate input circuitry. Issues relating to optimizing the phase of the spectra components in the excitation waveform are also discussed.

High Resolution Switching Mode Inductance-to-Frequency Converter with Temperature Compensationti

PubMed Central

Matko, Vojko; Milanović, Miro

2014-01-01

This article proposes a novel method for the temperature-compensated inductance-to-frequency converter with a single quartz crystal oscillating in the switching oscillating circuit to achieve better temperature stability of the converter. The novelty of this method lies in the switching-mode converter, the use of additionally connected impedances in parallel to the shunt capacitances of the quartz crystal, and two inductances in series to the quartz crystal. This brings a considerable reduction of the temperature influence of AT-cut crystal frequency change in the temperature range between 10 and 40 °C. The oscillator switching method and the switching impedances connected to the quartz crystal do not only compensate for the crystal's natural temperature characteristics but also any other influences on the crystal such as ageing as well as from other oscillating circuit elements. In addition, the method also improves frequency sensitivity in inductance measurements. The experimental results show that through high temperature compensation improvement of the quartz crystal characteristics, this switching method theoretically enables a 2 pH resolution. It converts inductance to frequency in the range of 85–100 μH to 2–560 kHz. PMID:25325334

FinFET and UTBB for RF SOI communication systems

NASA Astrophysics Data System (ADS)

Raskin, Jean-Pierre

2016-11-01

Performance of RF integrated circuit (IC) is directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Thanks to the introduction of the trap-rich high-resistivity Silicon-on-Insulator (SOI) substrate on the market, the ICs requirements in term of linearity are fulfilled. Today partially depleted SOI MOSFET is the mainstream technology for RF SOI systems. Future generations of mobile communication systems will require transistors with better high frequency performance at lower power consumption. The advanced MOS transistors in competition are FinFET and Ultra Thin Body and Buried oxide (UTBB) SOI MOSFETs. Both devices have been intensively studied these last years. Most of the reported data concern their digital performance. In this paper, their analog/RF behavior is described and compared. Both show similar characteristics in terms of transconductance, Early voltage, voltage gain, self-heating issue but UTBB outperforms FinFET in terms of cutoff frequencies thanks to their relatively lower fringing parasitic capacitances.

Biredox ionic liquids: new opportunities toward high performance supercapacitors.

PubMed

Bodin, C; Mourad, E; Zigah, D; Le Vot, S; Freunberger, S A; Favier, F; Fontaine, O

2018-01-01

Nowadays commercial supercapacitors are based on purely capacitive storage at the porous carbons that are used for the electrodes. However, the limits that capacitive storage imposes on energy density calls to investigate new materials to improve the capacitance of the device. This new type of electrodes (e.g., RuO 2 , MnO 2 …) involves pseudo-capacitive faradaic redox processes with the solid material. Ion exchange with solid materials is, however, much slower than the adsorption process in capacitive storage and inevitably leads to significant loss of power. Faradaic process in the liquid state, in contrast can be similarly fast as capacitive processes due to the fast ion transport. Designing new devices with liquid like dynamics and improved specific capacitance is challenging. We present a new approach to increase the specific capacitance using biredox ionic liquids, where redox moieties are tethered to the electrolyte ions, allowing high redox concentrations and significant pseudo-capacitive storage in the liquid state. Anions and cations are functionalized with anthraquinone (AQ) and 2,2,6,6-tetramethylpiperidinyl-1-oxyl (TEMPO) moieties, respectively. Glassy carbon, carbon-onion, and commercial activated carbon electrodes that exhibit different double layer structures and thus different diffusion dynamics were used to simultaneously study the electrochemical response of biredox ionic liquids at the positive and negative electrode.

A porous ceramic membrane tailored high-temperature supercapacitor

NASA Astrophysics Data System (ADS)

Zhang, Xin; He, Benlin; Zhao, Yuanyuan; Tang, Qunwei

2018-03-01

The supercapacitor that can operate at high-temperature are promising for markedly increase in capacitance because of accelerated charge movement. However, the state-of-the-art polymer-based membranes will decompose at high temperature. Inspired by solid oxide fuel cells, we present here the experimental realization of high-temperature supercapacitors (HTSCs) tailored with porous ceramic separator fabricated by yttria-stabilized zirconia (YSZ) and nickel oxide (NiO). Using activated carbon electrode and supporting electrolyte from potassium hydroxide (KOH) aqueous solution, a category of symmetrical HTSCs are built in comparison with a conventional polymer membrane based device. The dependence of capacitance performance on temperature is carefully studied, yielding a maximized specific capacitance of 272 F g-1 at 90 °C for the optimized HTSC tailored by NiO/YSZ membrane. Moreover, the resultant HTSC has relatively high durability when suffer repeated measurement over 1000 cycles at 90 °C, while the polymer membrane based supercapacitor shows significant reduction in capacitance at 60 °C. The high capacitance along with durability demonstrates NiO/YSZ membrane tailored HTSCs are promising in future advanced energy storage devices.

Synthesis and Characterization of Self-Standing and Highly Flexible δ-MnO2@CNTs/CNTs Composite Films for Direct Use of Supercapacitor Electrodes.

PubMed

Wu, Peng; Cheng, Shuang; Yang, Lufeng; Lin, Zhiqiang; Gui, Xuchun; Ou, Xing; Zhou, Jun; Yao, Minghai; Wang, Mengkun; Zhu, Yuanyuan; Liu, Meilin

2016-09-14

Self-standing and flexible films worked as pseudocapacitor electrodes have been fabricated via a simple vacuum-filtration procedure to stack δ-MnO2@carbon nanotubes (CNTs) composite layer and pure CNT layer one by one with CNT layers ended. The lightweight CNTs layers served as both current collector and supporter, while the MnO2@CNTs composite layers with birnessite-type MnO2 worked as active layer and made the main contribution to the capacitance. At a low discharge current of 0.2 A g(-1), the layered films displayed a high areal capacitance of 0.293 F cm(-2) with a mass of 1.97 mg cm(-2) (specific capacitance of 149 F g(-1)) and thickness of only 16.5 μm, and hence an volumetric capacitance of about 177.5 F cm(-3). Moreover, the films also exhibited a good rate capability (only about 15% fading for the capacitance when the discharge current increased to 5 A g(-1) from 0.2 A g(-1)), outstanding cycling stability (about 90% of the initial capacitance was remained after 5,000 cycles) and high flexibility (almost no performance change when bended to different angles). In addition, the capacitance of the films increased proportionally with the stacked layers and the geometry area. E.g., when the stacked layers were three times many with a mass of 6.18 mg cm(-2), the areal capacitance of the films was increased to 0.764 F cm(-2) at 0.5 A g(-1), indicating a high electronic conductivity. It is not overstated to say that the flexible and lightweight layered films emerged high potential for future practical applications as supercapacitor electrodes.

Improved Capacitive Liquid Sensor

NASA Technical Reports Server (NTRS)

Waldman, Francis A.

1992-01-01

Improved capacitive sensor used to detect presence and/or measure thickness of layer of liquid. Electrical impedance or admittance of sensor measured at prescribed frequency, and thickness of liquid inferred from predetermined theoretical or experimental relationship between impedance and thickness. Sensor is basically a three-terminal device. Features interdigitated driving and sensing electrodes and peripheral coplanar ground electrode that reduces parasitic effects. Patent-pending because first to utilize ground plane as "shunting" electrode. System less expensive than infrared, microwave, or refractive-index systems. Sensor successfully evaluated in commercial production plants to characterize emulsions, slurries, and solutions.

Porous MoO2 nanowires as stable and high-rate negative electrodes for electrochemical capacitors.

PubMed

Zheng, Dezhou; Feng, Haobin; Zhang, Xiyue; He, Xinjun; Yu, Minghao; Lu, Xihong; Tong, Yexiang

2017-04-04

Free-standing porous MoO 2 nanowires with extraordinary capacitive performance are developed as high-performance electrodes for electrochemical capacitors. The as-obtained MoO 2 electrode exhibits a remarkable capacitance of 424.4 mF cm -2 with excellent electrochemical durability (no capacitance decay after 10 000 cycles at various scan rates).

Competition between ionic adsorption and desorption on electrochemical double layer capacitor electrodes in acetonitrile solutions at different currents and temperatures

NASA Astrophysics Data System (ADS)

Park, Sieun; Kang, Seok-Won; Kim, Ketack

2017-12-01

The operation of electrochemical double layer capacitors at high currents and viscosities and at low temperatures is difficult. Under these conditions, ion transport is limited, and some of the electrode area is unavailable for adsorption, which results in a low capacitance. Increasing the temperature helps to increase the ionic movement, leading to enhanced adsorption and increased capacitance. In contrast, ion desorption (self-discharge) surpasses the capacitance improvement when ions gain a high amount of energy with increasing temperature. For example, temperatures as high as 70 °C cause a very high rate of ionic desorption in acetonitrile solutions in which the individual properties of the two electrolytes-tetraethylammonium tetrafluoroborate (TEA BF4) and ethylmethylimidazolium tetrafluoroborate (EMI BF4)-are not distinguishable. The capacitance improvement and self-discharge are balanced, resulting in a capacitance peak at mid-range temperatures, i.e., 35-45 °C, in the more viscous electrolyte, i.e., TEA BF4. The less viscous electrolyte, i.e., EMI BF4 has a wider capacitance peak from 25 to 45 °C and higher capacitance than that of TEA BF4. Because the maximum power is obtained in the mid-temperature range (35-45 °C), it is necessary to control the viscosity and temperature to obtain the maximum power in a given device.

Superior supercapacitors based on nitrogen and sulfur co-doped hierarchical porous carbon: Excellent rate capability and cycle stability

NASA Astrophysics Data System (ADS)

Zhang, Deyi; Han, Mei; Wang, Bing; Li, Yubing; Lei, Longyan; Wang, Kunjie; Wang, Yi; Zhang, Liang; Feng, Huixia

2017-08-01

Vastly improving the charge storage capability of supercapacitors without sacrificing their high power density and cycle performance would bring bright application prospect. Herein, we report a nitrogen and sulfur co-doped hierarchical porous carbon (NSHPC) with very superior capacitance performance fabricated by KOH activation of nitrogen and sulfur co-doped ordered mesoporous carbon (NSOMC). A high electrochemical double-layer (EDL) capacitance of 351 F g-1 was observed for the reported NSHPC electrodes, and the capacitance remains at 288 F g-1 even under a large current density of 20 A g-1. Besides the high specific capacitance and outstanding rate capability, symmetrical supercapacitor cell based on the NSHPC electrodes also exhibits an excellent cycling performance with 95.61% capacitance retention after 5000 times charge/discharge cycles. The large surface area caused by KOH activation (2056 m2 g-1) and high utilized surface area owing to the ideal micro/mesopores ratio (2.88), large micropores diameter (1.38 nm) and short opened micropores structure as well as the enhanced surface wettability induced by N and S heteroatoms doping and improved conductivity induced by KOH activation was found to be responsible for the very superior capacitance performance.

Organic transistors for electrophysiology (Presentation Recording)

NASA Astrophysics Data System (ADS)

Rivnay, Jonathan

2015-10-01

Efficient local transduction of biological signals is of critical importance for mapping brain activity and diagnosing pathological conditions. Traditional devices used to record electrophysiological signals are passive electrodes that require (pre)amplification with downstream electronics. Organic electrochemical transistors (OECTs) that utilize conducting polymer films as the channel have shown considerable promise as amplifying transducers due to their stability in aqueous conditions and high transconductance (>3 mS). The materials properties and physics of such transistors, however, remains largely unexplored thus limiting their potential. Here we show that the uptake of ionic charge from an electrolyte into a poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT:PSS) OECT channel leads to a dependence of the effective capacitance on the entire volume of the film. Subsequently, device transconductance and time response vary with channel thickness, a defining characteristic that differentiates OECTs from field effect transistors, and provides a new degree of freedom for device engineering. Using this understanding we tailor OECTs for a variety of low (1-100 Hz) and high (1-10 kHz) frequency applications, including human electroencephalography, where high transconductance devices impart richer signal content without the need for additional amplification circuitry. We also show that the materials figure of merit OECTs is the product of hole mobility and volumetric capacitance of the channel, leading to design rules for novel high performance materials.

Microwave frequency sensor for detection of biological cells in microfluidic channels.

PubMed

Nikolic-Jaric, M; Romanuik, S F; Ferrier, G A; Bridges, G E; Butler, M; Sunley, K; Thomson, D J; Freeman, M R

2009-08-12

We present details of an apparatus for capacitive detection of biomaterials in microfluidic channels operating at microwave frequencies where dielectric effects due to interfacial polarization are minimal. A circuit model is presented, which can be used to adapt this detection system for use in other microfluidic applications and to identify ones where it would not be suitable. The detection system is based on a microwave coupled transmission line resonator integrated into an interferometer. At 1.5 GHz the system is capable of detecting changes in capacitance of 650 zF with a 50 Hz bandwidth. This system is well suited to the detection of biomaterials in a variety of suspending fluids, including phosphate-buffered saline. Applications involving both model particles (polystyrene microspheres) and living cells-baker's yeast (Saccharomyces cerevisiae) and Chinese hamster ovary cells-are presented.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Nantao; Zhang, Liling; Yang, Chao

Thin, robust, lightweight, and flexible supercapacitors (SCs) have aroused growing attentions nowadays due to the rapid development of flexible electronics. Graphene-polyaniline (PANI) hybrids are attractive candidates for high performance SCs. In order to utilize them in real devices, it is necessary to improve the capacitance and the structure stability of PANI. Here we report a hierarchical three-dimensional structure, in which all of PANI nanofibers (NFs) are tightly wrapped inside reduced graphene oxide (rGO) nanosheet skeletons, for high-performance flexible SCs. The as-fabricated film electrodes with this unique structure showed a highest gravimetric specific capacitance of 921 F/g and volumetric capacitance ofmore » 391 F/cm 3. The assembled solid-state SCs gave a high specific capacitance of 211 F/g (1 A/g), a high area capacitance of 0.9 F/cm 2, and a competitive volumetric capacitance of 25.6 F/cm 3. The SCs also exhibited outstanding rate capability (~75% retention at 20 A/g) as well as excellent cycling stability (100% retention at 10 A/g for 2000 cycles). Additionally, no structural failure and loss of performance were observed under the bending state. Lastly, this structure design paves a new avenue for engineering rGO/PANI or other similar hybrids for high performance flexible energy storage devices.« less

Synthesis of ultrathin nitrogen-doped graphitic carbon nanocages as advanced electrode materials for supercapacitor.

PubMed

Tan, Yueming; Xu, Chaofa; Chen, Guangxu; Liu, Zhaohui; Ma, Ming; Xie, Qingji; Zheng, Nanfeng; Yao, Shouzhuo

2013-03-01

Synthesis of nitrogen-doped carbons with large surface area, high conductivity, and suitable pore size distribution is highly desirable for high-performance supercapacitor applications. Here, we report a novel protocol for template synthesis of ultrathin nitrogen-doped graphitic carbon nanocages (CNCs) derived from polyaniline (PANI) and their excellent capacitive properties. The synthesis of CNCs involves one-pot hydrothermal synthesis of Mn3O4@PANI core-shell nanoparticles, carbonization to produce carbon coated MnO nanoparticles, and then removal of the MnO cores by acidic treatment. The CNCs prepared at an optimum carbonization temperature of 800 °C (CNCs-800) have regular frameworks, moderate graphitization, high specific surface area, good mesoporosity, and appropriate N doping. The CNCs-800 show high specific capacitance (248 F g(-1) at 1.0 A g(-1)), excellent rate capability (88% and 76% capacitance retention at 10 and 100 A g(-1), respectively), and outstanding cycling stability (~95% capacitance retention after 5000 cycles) in 6 M KOH aqueous solution. The CNCs-800 can also exhibit great pseudocapacitance in 0.5 M H2SO4 aqueous solution besides the large electrochemical double-layer capacitance. The excellent capacitance performance coupled with the facile synthesis of ultrathin nitrogen-doped graphitic CNCs indicates their great application potential in supercapacitors.

Nano-aggregates of cobalt nickel oxysulfide as a high-performance electrode material for supercapacitors

NASA Astrophysics Data System (ADS)

Liu, Lifeng

2013-11-01

Nano-aggregates of cobalt nickel oxysulfide (CoNi)OxSy have been synthesized by hydrothermal processing and exhibited specific and areal capacitance as high as 592 F g-1 and 1628 mF cm-2, respectively, at a current density of 0.5 A g-1/1.375 mA cm-2. They also show high capacitance retention upon extended cycling at high rates.Nano-aggregates of cobalt nickel oxysulfide (CoNi)OxSy have been synthesized by hydrothermal processing and exhibited specific and areal capacitance as high as 592 F g-1 and 1628 mF cm-2, respectively, at a current density of 0.5 A g-1/1.375 mA cm-2. They also show high capacitance retention upon extended cycling at high rates. Electronic supplementary information (ESI) available: Experimental details; supplementary tables. See DOI: 10.1039/c3nr03533f

Structural, morphological, dielectric and impedance spectroscopy of lead-free Bi(Zn2/3Ta1/3)O3 electronic material

NASA Astrophysics Data System (ADS)

Halder, S.; Bhuyan, S.; Das, S. N.; Sahoo, S.; Choudhary, R. N. P.; Das, P.; Parida, K.

2017-12-01

A lead-free dielectric material [Bi(Zn2/3Ta1/3)O3] has been prepared using a solid state reaction technique at high-temperature. The resistive, conducting and capacitive characteristics of the prepared electronic material have been studied in different experimental conditions. The determination of basic crystal parameters and reflection indices confirm the development of polycrystalline compound with orthorhombic crystal structure. The study of frequency-temperature dependence of ac conductivity illustrates the nature and conduction mechanism of the material. On the basis of observed impedance data and detailed dielectric analysis, the existence of non-Debye type relaxation has been affirmed. The electronic charge carriers of compound have short range order that has been validated from the complex modulus and impedance spectrum. The detailed studies of resistive, capacitive, microstructural characteristics of the prepared material provide some useful data for considering the material as an electronic component for fabrication of devices.

Capacitively coupled hydrogen plasmas sustained by tailored voltage waveforms: excitation dynamics and ion flux asymmetry

DOE PAGES

Bruneau, B.; Diomede, P.; Economou, D. J.; ...

2016-06-08

Parallel plate capacitively coupled plasmas in hydrogen at relatively high pressure (~1 Torr) are excited with tailored voltage waveforms containing up to five frequencies. Predictions of a hybrid model combining a particle-in-cell simulation with Monte Carlo collisions and a fluid model are compared to phase resolved optical emission spectroscopy measurements, yielding information on the dynamics of the excitation rate in these discharges. When the discharge is excited with amplitude asymmetric waveforms, the discharge becomes electrically asymmetric, with different ion energies at each of the two electrodes. Unexpectedly, large differences in themore » $$\\text{H}_{2}^{+}$$ fluxes to each of the two electrodes are caused by the different $$\\text{H}_{3}^{+}$$ energies. When the discharge is excited with slope asymmetric waveforms, only weak electrical asymmetry of the discharge is observed. In this case, electron power absorption due to fast sheath expansion at one electrode is balanced by electron power absorption at the opposite electrode due to a strong electric field reversal.« less

On electron heating in a low pressure capacitively coupled oxygen discharge

NASA Astrophysics Data System (ADS)

Gudmundsson, J. T.; Snorrason, D. I.

2017-11-01

We use the one-dimensional object-oriented particle-in-cell Monte Carlo collision code oopd1 to explore the charged particle densities, the electronegativity, the electron energy probability function, and the electron heating mechanism in a single frequency capacitively coupled oxygen discharge, when the applied voltage amplitude is varied. We explore discharges operated at 10 mTorr, where electron heating within the plasma bulk (the electronegative core) dominates, and at 50 mTorr, where sheath heating dominates. At 10 mTorr, the discharge is operated in a combined drift-ambipolar and α-mode, and at 50 mTorr, it is operated in the pure α-mode. At 10 mTorr, the effective electron temperature is high and increases with increased driving voltage amplitude, while at 50 mTorr, the effective electron temperature is much lower, in particular, within the electronegative core, where it is roughly 0.2-0.3 eV, and varies only a little with the voltage amplitude.

Experimental study of a SINIS detector response time at 350 GHz signal frequency

NASA Astrophysics Data System (ADS)

Lemzyakov, S.; Tarasov, M.; Mahashabde, S.; Yusupov, R.; Kuzmin, L.; Edelman, V.

2018-03-01

Response time constant of a SINIS bolometer integrated in an annular ring antenna was measured at a bath temperature of 100 mK. Samples comprising superconducting aluminium electrodes and normal-metal Al/Fe strip connected to electrodes via tunnel junctions were fabricated on oxidized Si substrate using shadow evaporation. The bolometer was illuminated by a fast black-body radiation source through a band-pass filter centered at 350 GHz with a passband of 7 GHz. Radiation source is a thin NiCr film on sapphire substrate. For rectangular 10÷100 μs current pulse the radiation front edge was rather sharp due to low thermal capacitance of NiCr film and low thermal conductivity of substrate at temperatures in the range 1-4 K. The rise time of the response was ~1-10 μs. This time presumably is limited by technical reasons: high dynamic resistance of series array of bolometers and capacitance of a long twisted pair wiring from SINIS bolometer to a room-temperature amplifier.

Advances in Spectral Electrical Impedance Tomography (EIT) for Near-Surface Geophysical Exploration

NASA Astrophysics Data System (ADS)

Huisman, J. A.; Zimmermann, E.; Kelter, M.; Zhao, Y.; Bukhary, T. H.; Vereecken, H.

2016-12-01

Recent advances in spectral Electrical Impedance Tomography (EIT) now allow to obtain the complex electrical conductivity distribution in near-surface environments with a high accuracy for a broad range of frequencies (mHz - kHz). One of the key advances has been the development of correction methods to account for inductive coupling effects between wires used for current and potential measurements and capacitive coupling between cables and the subsurface environment. In this study, we first review these novel correction methods and then illustrate how the consideration of capacitive and inductive coupling improves spectral EIT results. For this, borehole EIT measurements were made in a shallow aquifer using a custom-made EIT system with two electrode chains each consisting of eight active electrodes with a separation of 1 m. The EIT measurements were inverted with and without consideration of inductive and capacitive coupling effects. The inversion results showed that spatially and spectrally consistent imaging results can only be obtained when inductive coupling effects are considered (phase accuracy of 1-2 mrad at 1 kHz). Capacitive coupling effects were found to be of secondary importance for the set-up used here, but its importance will increase when longer cables are used. Although these results are promising, the active electrode chains can only be used with our custom-made EIT system. Therefore, we also explored to what extent EIT measurements with passive electrode chains amenable to commercially available EIT measurement systems can be corrected for coupling effects. It was found that EIT measurements with passive unshielded cables could not be corrected above 100 Hz because of the strong but inaccurately known capacitive coupling between the electrical wires. However, it was possible to correct EIT measurements with passive shielded cables, and the final accuracy of the phase measurements was estimated to be 2-4 mrad at 1 kHz.

High frequency, high time resolution time-to-digital converter employing passive resonating circuits.

PubMed

Ripamonti, Giancarlo; Abba, Andrea; Geraci, Angelo

2010-05-01

A method for measuring time intervals accurate to the picosecond range is based on phase measurements of oscillating waveforms synchronous with their beginning and/or end. The oscillation is generated by triggering an LC resonant circuit, whose capacitance is precharged. By using high Q resonators and a final active quenching of the oscillation, it is possible to conjugate high time resolution and a small measurement time, which allows a high measurement rate. Methods for fast analysis of the data are considered and discussed with reference to computing resource requirements, speed, and accuracy. Experimental tests show the feasibility of the method and a time accuracy better than 4 ps rms. Methods aimed at further reducing hardware resources are finally discussed.

Three-dimensional skeleton networks of graphene wrapped polyaniline nanofibers: an excellent structure for high-performance flexible solid-state supercapacitors

PubMed Central

Hu, Nantao; Zhang, Liling; Yang, Chao; Zhao, Jian; Yang, Zhi; Wei, Hao; Liao, Hanbin; Feng, Zhenxing; Fisher, Adrian; Zhang, Yafei; Xu, Zhichuan J.

2016-01-01

Thin, robust, lightweight, and flexible supercapacitors (SCs) have aroused growing attentions nowadays due to the rapid development of flexible electronics. Graphene-polyaniline (PANI) hybrids are attractive candidates for high performance SCs. In order to utilize them in real devices, it is necessary to improve the capacitance and the structure stability of PANI. Here we report a hierarchical three-dimensional structure, in which all of PANI nanofibers (NFs) are tightly wrapped inside reduced graphene oxide (rGO) nanosheet skeletons, for high-performance flexible SCs. The as-fabricated film electrodes with this unique structure showed a highest gravimetric specific capacitance of 921 F/g and volumetric capacitance of 391 F/cm3. The assembled solid-state SCs gave a high specific capacitance of 211 F/g (1 A/g), a high area capacitance of 0.9 F/cm2, and a competitive volumetric capacitance of 25.6 F/cm3. The SCs also exhibited outstanding rate capability (~75% retention at 20 A/g) as well as excellent cycling stability (100% retention at 10 A/g for 2000 cycles). Additionally, no structural failure and loss of performance were observed under the bending state. This structure design paves a new avenue for engineering rGO/PANI or other similar hybrids for high performance flexible energy storage devices. PMID:26795067

Three-dimensional skeleton networks of graphene wrapped polyaniline nanofibers: An excellent structure for high-performance flexible solid-state supercapacitors

DOE PAGES

Hu, Nantao; Zhang, Liling; Yang, Chao; ...

2016-01-22

Thin, robust, lightweight, and flexible supercapacitors (SCs) have aroused growing attentions nowadays due to the rapid development of flexible electronics. Graphene-polyaniline (PANI) hybrids are attractive candidates for high performance SCs. In order to utilize them in real devices, it is necessary to improve the capacitance and the structure stability of PANI. Here we report a hierarchical three-dimensional structure, in which all of PANI nanofibers (NFs) are tightly wrapped inside reduced graphene oxide (rGO) nanosheet skeletons, for high-performance flexible SCs. The as-fabricated film electrodes with this unique structure showed a highest gravimetric specific capacitance of 921 F/g and volumetric capacitance ofmore » 391 F/cm 3. The assembled solid-state SCs gave a high specific capacitance of 211 F/g (1 A/g), a high area capacitance of 0.9 F/cm 2, and a competitive volumetric capacitance of 25.6 F/cm 3. The SCs also exhibited outstanding rate capability (~75% retention at 20 A/g) as well as excellent cycling stability (100% retention at 10 A/g for 2000 cycles). Additionally, no structural failure and loss of performance were observed under the bending state. Lastly, this structure design paves a new avenue for engineering rGO/PANI or other similar hybrids for high performance flexible energy storage devices.« less

High Packing Density Unidirectional Arrays of Vertically Aligned Graphene with Enhanced Areal Capacitance for High-Power Micro-Supercapacitors.

PubMed

Zheng, Shuanghao; Li, Zhilin; Wu, Zhong-Shuai; Dong, Yanfeng; Zhou, Feng; Wang, Sen; Fu, Qiang; Sun, Chenglin; Guo, Liwei; Bao, Xinhe

2017-04-25

Interfacial integration of a shape-engineered electrode with a strongly bonded current collector is the key for minimizing both ionic and electronic resistance and then developing high-power supercapacitors. Herein, we demonstrated the construction of high-power micro-supercapacitors (VG-MSCs) based on high-density unidirectional arrays of vertically aligned graphene (VG) nanosheets, derived from a thermally decomposed SiC substrate. The as-grown VG arrays showed a standing basal plane orientation grown on a (0001̅) SiC substrate, tailored thickness (3.5-28 μm), high-density structurally ordering alignment of graphene consisting of 1-5 layers, vertically oriented edges, open intersheet channels, high electrical conductivity (192 S cm -1 ), and strong bonding of the VG edges to the SiC substrate. As a result, the demonstrated VG-MSCs displayed a high areal capacitance of ∼7.3 mF cm -2 and a fast frequency response with a short time constant of 9 ms. Furthermore, VG-MSCs in both an aqueous polymer gel electrolyte and nonaqueous ionic liquid of 1-ethyl-3-methylimidazolium tetrafluoroborate operated well at high scan rates of up to 200 V s -1 . More importantly, VG-MSCs offered a high power density of ∼15 W cm -3 in gel electrolyte and ∼61 W cm -3 in ionic liquid. Therefore, this strategy of producing high-density unidirectional VG nanosheets directly bonded on a SiC current collector demonstrated the feasibility of manufacturing high-power compact supercapacitors.

Computation of Dielectric Response in Molecular Solids for High Capacitance Organic Dielectrics.

PubMed

Heitzer, Henry M; Marks, Tobin J; Ratner, Mark A

2016-09-20

The dielectric response of a material is central to numerous processes spanning the fields of chemistry, materials science, biology, and physics. Despite this broad importance across these disciplines, describing the dielectric environment of a molecular system at the level of first-principles theory and computation remains a great challenge and is of importance to understand the behavior of existing systems as well as to guide the design and synthetic realization of new ones. Furthermore, with recent advances in molecular electronics, nanotechnology, and molecular biology, it has become necessary to predict the dielectric properties of molecular systems that are often difficult or impossible to measure experimentally. In these scenarios, it is would be highly desirable to be able to determine dielectric response through efficient, accurate, and chemically informative calculations. A good example of where theoretical modeling of dielectric response would be valuable is in the development of high-capacitance organic gate dielectrics for unconventional electronics such as those that could be fabricated by high-throughput printing techniques. Gate dielectrics are fundamental components of all transistor-based logic circuitry, and the combination high dielectric constant and nanoscopic thickness (i.e., high capacitance) is essential to achieving high switching speeds and low power consumption. Molecule-based dielectrics offer the promise of cheap, flexible, and mass producible electronics when used in conjunction with unconventional organic or inorganic semiconducting materials to fabricate organic field effect transistors (OFETs). The molecular dielectrics developed to date typically have limited dielectric response, which results in low capacitances, translating into poor performance of the resulting OFETs. Furthermore, the development of better performing dielectric materials has been hindered by the current highly empirical and labor-intensive pace of synthetic progress. An accurate and efficient theoretical computational approach could drastically decrease this time by screening potential dielectric materials and providing reliable design rules for future molecular dielectrics. Until recently, accurate calculation of dielectric responses in molecular materials was difficult and highly approximate. Most previous modeling efforts relied on classical formalisms to relate molecular polarizability to macroscopic dielectric properties. These efforts often vastly overestimated polarizability in the subject materials and ignored crucial material properties that can affect dielectric response. Recent advances in first-principles calculations via density functional theory (DFT) with periodic boundary conditions have allowed accurate computation of dielectric properties in molecular materials. In this Account, we outline the methodology used to calculate dielectric properties of molecular materials. We demonstrate the validity of this approach on model systems, capturing the frequency dependence of the dielectric response and achieving quantitative accuracy compared with experiment. This method is then used as a guide to new high-capacitance molecular dielectrics by determining what materials and chemical properties are important in maximizing dielectric response in self-assembled monolayers (SAMs). It will be seen that this technique is a powerful tool for understanding and designing new molecular dielectric systems, the properties of which are fundamental to many scientific areas.

Facile preparation of polypyrrole/graphene oxide nanocomposites with large areal capacitance using electrochemical codeposition for supercapacitors

NASA Astrophysics Data System (ADS)

Zhou, Haihan; Han, Gaoyi; Xiao, Yaoming; Chang, Yunzhen; Zhai, Hua-Jin

2014-10-01

A simple and low-cost electrochemical codeposition method has been introduced to fabricate polypyrrole/graphene oxide (PPy/GO) nanocomposites and the areal capacitance of conducting polymer/GO composites is reported for the first time. Fourier transform infrared spectroscopy (FTIR), Transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and X-ray diffraction (XRD) are implemented to determine the PPy/GO nanocomposites are successfully prepared and the interaction between PPy and GO. The as-prepared PPy/GO nanocomposites show the curly sheet-like morphology, superior capacitive behaviors and cyclic stability. Furthermore, the varying deposition time is implemented to investigate the impact of the loading amount on electrochemical behavior of the composites, and a high areal capacitance of 152 mF cm-2 is achieved at 10 mV s-1 CV scan. However, the thicker films caused by the long deposition time would result in larger diffusion resistance of electrolyte ions, consequently exhibit the relatively lower capacitance value at the high current density. The GCD tests indicate moderate deposition time is more suitable for the fast charge/discharge. Considering the very simple and effective synthetic process, the PPy/GO nanocomposites with relatively high areal capacitance are competitive candidate for supercapacitor application, and its capacitive performances can be easily tuned by varying the deposition time.

Temperature aspect of degradation of electrochemical double-layer capacitors (EDLC)

NASA Astrophysics Data System (ADS)

Baek, Dong-Cheon; Kim, Hyun-Ho; Lee, Soon-Bok

2015-03-01

Electric double layer capacitors (EDLC) cells have a process variation and temperature dependency in capacitance so that balancing is required when they are connected in series, which includes electronic voltage management based on capacitance monitoring. This paper measured temperature aspect of capacitance periodically to monitor health and degradation behavior of EDLC stressed under high temperatures and zero below temperatures respectively, which enables estimation of the state of health (SOH) regardless of temperature. At high temperature, capacitance saturation and delayed expression of degradation was observed. After cyclic stress at zero below temperature, less effective degradation and time recovery phenomenon were occurred.

In situ synthesized heteropoly acid/polyaniline/graphene nanocomposites to simultaneously boost both double layer- and pseudo-capacitance for supercapacitors.

PubMed

Cui, Zhiming; Guo, Chun Xian; Yuan, Weiyong; Li, Chang Ming

2012-10-05

It is challenging to simultaneously increase double layer- and pseudo-capacitance for supercapacitors. Phosphomolybdic acid/polyaniline/graphene nanocomposites (PMo(12)-PANI/GS) were prepared by using PMo(12) as a bifunctional reagent for not only well dispersing graphene for high electrochemical double layer capacitance but also in situ chemically polymerizing aniline for high pseudocapacitance, resulting in a specific capacitance of 587 F g(-1), which is ~1.5 and 6 times higher than that of PANI/GS (392 F g(-1)) and GS (103 F g(-1)), respectively. The nanocomposites also exhibit good reversibility and stability. Other kinds of heteropolyacids such as molybdovanadophosphoric acids (PMo(12-x)V(x), x = 1, 2 and 3) were also used to prepare PMo(12-x)V(x)-PANI/GS nanocomposites, also showing enhanced double layer- and pseudo-capacitance. This further proves the proposed concept to simultaneously boost both double layer- and pseudo-capacitance and demonstrates that it could be a universal approach to significantly improve the capacitance for supercapacitors.

Techniques for blade tip clearance measurements with capacitive probes

NASA Astrophysics Data System (ADS)

Steiner, Alexander

2000-07-01

This article presents a proven but advantageous concept for blade tip clearance evaluation in turbomachinery. The system is based on heavy duty probes and a high frequency (HF) and amplifying electronic unit followed by a signal processing unit. Measurements are taken under high temperature and other severe conditions such as ionization. Every single blade can be observed. The signals are digitally filtered and linearized in real time. The electronic set-up is highly integrated. Miniaturized versions of the electronic units exist. The small and robust units can be used in turbo engines in flight. With several probes at different angles in one radial plane further information is available. Shaft eccentricity or blade oscillations can be calculated.

Qubit Coupled Mechanical Resonator in an Electromechanical System

NASA Astrophysics Data System (ADS)

Hao, Yu

This thesis describes the development of a hybrid quantum electromechanical system. In this system the mechanical resonator is capacitively coupled to a superconducting transmon which is embedded in a superconducting coplanar waveguide (CPW) cavity. The difficulty of achieving high quality of superconducting qubit in a high-quality voltage-biased cavity is overcome by integrating a superconducting reflective T-filter to the cavity. Further spectroscopic and pulsed measurements of the hybrid system demonstrate interactions between the ultra-high frequency mechanical resonator and transmon qubit. The noise of mechanical resonator close to ground state is measured by looking at the spectroscopy of the transmon. At last, fabrication and tests of membrane resonators are discussed.

Cole-Cole, linear and multivariate modeling of capacitance data for on-line monitoring of biomass.

PubMed

Dabros, Michal; Dennewald, Danielle; Currie, David J; Lee, Mark H; Todd, Robert W; Marison, Ian W; von Stockar, Urs

2009-02-01

This work evaluates three techniques of calibrating capacitance (dielectric) spectrometers used for on-line monitoring of biomass: modeling of cell properties using the theoretical Cole-Cole equation, linear regression of dual-frequency capacitance measurements on biomass concentration, and multivariate (PLS) modeling of scanning dielectric spectra. The performance and robustness of each technique is assessed during a sequence of validation batches in two experimental settings of differing signal noise. In more noisy conditions, the Cole-Cole model had significantly higher biomass concentration prediction errors than the linear and multivariate models. The PLS model was the most robust in handling signal noise. In less noisy conditions, the three models performed similarly. Estimates of the mean cell size were done additionally using the Cole-Cole and PLS models, the latter technique giving more satisfactory results.

Electron series resonance in a magnetized 13.56 MHz symmetric capacitive coupled discharge

NASA Astrophysics Data System (ADS)

Joshi, J. K.; Binwal, S.; Karkari, S. K.; Kumar, Sunil

2018-03-01

A 13.56 MHz capacitive coupled radio-frequency (RF) argon discharge under transverse magnetic field has been investigated. The discharge is operated in a push-pull mode using a 1:1 isolation transformer with its centre tap grounded to a RF generator. The power delivered to the plasma has been calculated from phase-calibrated RF current/voltage waveforms measured on the secondary side of the isolation transformer. An equivalent electrical circuit of the discharge has been described to determine the net plasma impedance. It is found that in the presence of magnetic field, the discharge impedance exhibits a series resonance as the RF power level is increased gradually. However, in the un-magnetized case, the discharge remains entirely capacitive. A qualitative discussion has been given to explain the role of external magnetic field in achieving the series resonance.

Frequency range selection method of trans-impedance amplifier for high sensitivity lock-in amplifier used in the optical sensors

NASA Astrophysics Data System (ADS)

Park, Chang-In; Jeon, Su-Jin; Hong, Nam-Pyo; Choi, Young-Wan

2016-03-01

Lock-in amplifier (LIA) has been proposed as a detection technique for optical sensors because it can measure low signal in high noise level. LIA uses synchronous method, so the input signal frequency is locked to a reference frequency that is used to carry out the measurements. Generally, input signal frequency of LIA used in optical sensors is determined by modulation frequency of optical signal. It is important to understand the noise characteristics of the trans-impedance amplifier (TIA) to determine the modulation frequency. The TIA has a frequency range in which noise is minimized by the capacitance of photo diode (PD) and the passive component of TIA feedback network. When the modulation frequency is determined in this range, it is possible to design a robust system to noise. In this paper, we propose a method for the determination of optical signal modulation frequency selection by using the noise characteristics of TIA. Frequency response of noise in TIA is measured by spectrum analyzer and minimum noise region is confirmed. The LIA and TIA circuit have been designed as a hybrid circuit. The optical sensor is modeled by the laser diode (LD) and photo diode (PD) and the modulation frequency was used as the input to the signal generator. The experiments were performed to compare the signal to noise ratio (SNR) of the minimum noise region and the others. The results clearly show that the SNR is enhanced in the minimum noise region of TIA.

Freestanding polyaniline nanorods grown on graphene for highly capacitive energy storage

NASA Astrophysics Data System (ADS)

Li, Zijiong; Qin, Zhen; Yang, Baocheng; Guo, Jian; Wang, Haiyan; Zhang, Weiyang; Lv, Xiaowei; Stack, Alison

2015-02-01

Freestanding polyaniline (PANI) nanorods grown in situ on microwave-expanded graphene oxide (MEGO) sheets were prepared through a facile solution method. The morphological characterization indicates that large quantity of free-standing PANI nanorods with average diameter of 50 nm were uniformly deposited onto the double sides of the MEGO nanosheets to form a sandwich structure. The hybrid of PANI/MEGO (GPANI) exhibit high specific surface area and high electrical conductivity, compared with pristine PANI nanorods. When evaluated as electrodes for supercapacitors, the GPANI demonstrate high specific capacitance of 628 F g-1 at a current density of 1.1 A g-1, high-rate performance, and excellent cycle stability compared to individual component. Such excellent electrochemical performance should be attributed to the combined double-layer capacitance and pseudo -capacitance mechanisms from the MEGO sheets and PANI nanorods.

Organic semiconductor photodiode based on indigo carmine/n-Si for optoelectronic applications

NASA Astrophysics Data System (ADS)

Ganesh, V.; Manthrammel, M. Aslam; Shkir, Mohd.; Yahia, I. S.; Zahran, H. Y.; Yakuphanoglu, F.; AlFaify, S.

2018-06-01

The fabrication of indigo carmine/n-Si photodiode has been done, and a robust dark and photocurrent-voltage ( I- V), capacitance vs. voltage ( C-V) and conductance vs. voltage ( G-V) studies were done over a wide range of applied voltage and frequencies. The surface morphology was assessed by atomic force microscope (AFM), and the grain size was measured to be about 66 nm. The reverse current increased with both increasing illumination intensity and bias potential, whereas the forward current increased exponentially with bias potential. The responsivity value was also calculated. Barrier height and ideality factor of diode were estimated through a log (I) vs log (V) plot, and obtained to be 0.843 and 4.75 eV, respectively. The Vbi values are found between 0.95 and 1.2V for frequencies ranging between 100 kHz and 1 MHz. The value of R s is found to be lower at higher frequencies which may be due to a certain distribution of localized interface states. A strong frequency and voltage dependency were observed for interface states density N ss in the present indigo carmine/n-Si photodiode, and this explained the observed capacitance and resistance variation with frequency. These results suggest that the fabricated diode has the potential to be applied in optoelectronic devices.

Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode

NASA Astrophysics Data System (ADS)

Taşçıoğlu, İ.; Tüzün Özmen, Ö.; Şağban, H. M.; Yağlıoğlu, E.; Altındal, Ş.

2017-04-01

In this study, poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester: 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (P3HT:PCBM:F4-TCNQ) organic film was deposited on n-type silicon (n-Si) substrate by spin coating method. The electrical and dielectric analysis of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky barrier diode was conducted by means of capacitance-voltage ( C- V) and conductance-voltage ( G/ ω- V) measurements in the frequency range of 10 kHz-2 MHz. The C- V- f plots exhibit fairly large frequency dispersion due to excess capacitance caused by the presence of interface states ( N ss). The values of N ss located in semiconductor bandgap at the organic film/semiconductor interface were calculated by Hill-Coleman method. Experimental results show that dielectric constant ( ɛ') and dielectric loss ( ɛ″) decrease with increasing frequency, whereas loss tangent (tan δ) remains nearly the same. The decrease in ɛ' and ɛ″ was interpreted by the theory of dielectric relaxation due to interfacial polarization. It is also observed that ac electrical conductivity ( σ ac) and electric modulus ( M' and M″) increase with increasing frequency.

Photoluminescence of Ta2O5 films formed by the molecular layer deposition method

NASA Astrophysics Data System (ADS)

Baraban, A. P.; Dmitriev, V. A.; Prokof'ev, V. A.; Drozd, V. E.; Filatova, E. O.

2016-04-01

Ta2O5 films of different thicknesses (20-100 nm) synthesized by the molecular layer deposition method on p-type silicon substrates and thermally oxidized silicon substrates have been studied by the methods of high-frequency capacitance-voltage characteristics and photoluminescence. A hole-conduction channel is found to form in the Si-Ta2O5-field electrode system. A model of the electronic structure of Ta2O5 films is proposed based on an analysis of the measured PL spectra and performed electrical investigations.

Starter for inductively coupled plasma tube

DOEpatents

Hull, D.E.; Bieniewski, T.M.

1988-08-23

A starter assembly is provided for use with an inductively coupled plasma (ICP) tube to reliably initiate a plasma at internal pressures above about 30 microns. A conductive probe is inserted within the inductor coil about the tube and insulated from the tube shield assembly. A capacitive circuit is arranged for momentarily connecting a high voltage radio-frequency generator to the probe while simultaneously energizing the coil. When the plasma is initiated the probe is disconnected from the generator and electrically connected to the shield assembly for operation. 1 fig.