Flexible GaN for High Performance, Strainable Radio Frequency Devices (Postprint)

DTIC Science & Technology

2017-11-02

devices on van der Waals (vdW) layers has been facilitated by the recent avail - ability of high -quality atomically smooth BN and graphene epi- taxial...AFRL-RX-WP-JA-2017-0333 FLEXIBLE GaN FOR HIGH PERFORMANCE, STRAINABLE RADIO FREQUENCY DEVICES (POSTPRINT) Elizabeth A. Moore and Timothy...2. REPORT TYPE 3. DATES COVERED (From - To) 5 April 2017 Interim 8 September 2014 – 5 March 2017 4. TITLE AND SUBTITLE FLEXIBLE GaN FOR HIGH

High-frequency applications of high-temperature superconductor thin films

NASA Astrophysics Data System (ADS)

Klein, N.

2002-10-01

High-temperature superconducting thin films offer unique properties which can be utilized for a variety of high-frequency device applications in many areas related to the strongly progressing market of information technology. One important property is an exceptionally low level of microwave absorption at temperatures attainable with low power cryocoolers. This unique property has initiated the development of various novel type of microwave devices and commercialized subsystems with special emphasis on application in advanced microwave communication systems. The second important achievement related to efforts in oxide thin and multilayer technology was the reproducible fabrication of low-noise Josephson junctions in high-temperature superconducting thin films. As a consequence of this achievement, several novel nonlinear high-frequency devices, most of them exploiting the unique features of the ac Josephson effect, have been developed and found to exhibit challenging properties to be utilized in basic metrology and Terahertz technology. On the longer timescale, the achievements in integrated high-temperature superconductor circuit technology may offer a strong potential for the development of digital devices with possible clock frequencies in the range of 100 GHz.

Multiscale Thermo-Mechanical Design and Analysis of High Frequency and High Power Vacuum Electron Devices

NASA Astrophysics Data System (ADS)

Gamzina, Diana

Diana Gamzina March 2016 Mechanical and Aerospace Engineering Multiscale Thermo-Mechanical Design and Analysis of High Frequency and High Power Vacuum Electron Devices Abstract A methodology for performing thermo-mechanical design and analysis of high frequency and high average power vacuum electron devices is presented. This methodology results in a "first-pass" engineering design directly ready for manufacturing. The methodology includes establishment of thermal and mechanical boundary conditions, evaluation of convective film heat transfer coefficients, identification of material options, evaluation of temperature and stress field distributions, assessment of microscale effects on the stress state of the material, and fatigue analysis. The feature size of vacuum electron devices operating in the high frequency regime of 100 GHz to 1 THz is comparable to the microstructure of the materials employed for their fabrication. As a result, the thermo-mechanical performance of a device is affected by the local material microstructure. Such multiscale effects on the stress state are considered in the range of scales from about 10 microns up to a few millimeters. The design and analysis methodology is demonstrated on three separate microwave devices: a 95 GHz 10 kW cw sheet beam klystron, a 263 GHz 50 W long pulse wide-bandwidth sheet beam travelling wave tube, and a 346 GHz 1 W cw backward wave oscillator.

Characterization of ultrafast devices using novel optical techniques

NASA Astrophysics Data System (ADS)

Ali, Md Ershad

Optical techniques have been extensively used to examine the high frequency performance of a number of devices including High Electron Mobility Transistors (HEMTs), Heterojunction Bipolar Phototransistors (HPTs) and Low Temperature GaAs (LT-GaAs) Photoconductive Switches. To characterize devices, frequency and time domain techniques, namely optical heterodyning and electro-optic sampling, having measurement bandwidths in excess of 200 GHz, were employed. Optical mixing in three-terminal devices has been extended for the first time to submillimeter wave frequencies. Using a new generation of 50-nm gate pseudomorphic InP-based HEMTs, optically mixed signals were detected to 552 GHz with a signal-to-noise ratio of approximately 5 dB. To the best of our knowledge, this is the highest frequency optical mixing obtained in three- terminal devices to date. A novel harmonic three-wave detection scheme was used for the detection of the optically generated signals. The technique involved downconversion of the signal in the device by the second harmonic of a gate-injected millimeter wave local oscillator. Measurements were also conducted up to 212 GHz using direct optical mixing and up to 382 GHz using a fundamental three-wave detection scheme. New interesting features in the bias dependence of the optically mixed signals have been reported. An exciting novel development from this work is the successful integration of near-field optics with optical heterodyning. The technique, called near-field optical heterodyning (NFOH), allows for extremely localized injection of high-frequency stimulus to any arbitrary point of an ultrafast device or circuit. Scanning the point of injection across the sample provides details of the high frequency operation of the device with high spatial resolution. For the implementation of the technique, fiber-optic probes with 100 nm apertures were fabricated. A feedback controlled positioning system was built for accurate placement and scanning of the fiber probe with nanometric precision. The applicability of the NFOH technique was first confirmed by measurements on heterojunction phototransistors at 100 GHz. Later NFOH scans were performed at 63 GHz on two other important devices, HEMTs and LT-GaAs Photoconductive Switches. Spatially resolved response characteristics of these devices revealed interesting details of their operation.

Effect of HeartMate left ventricular assist device on cardiac autonomic nervous activity.

PubMed

Kim, S Y; Montoya, A; Zbilut, J P; Mawulawde, K; Sullivan, H J; Lonchyna, V A; Terrell, M R; Pifarré, R

1996-02-01

Clinical performance of a left ventricular assist device is assessed via hemodynamic parameters and end-organ function. This study examined effect of a left ventricular assist device on human neurophysiology. This study evaluated the time course change of cardiac autonomic activity of 3 patients during support with a left ventricular assist device before cardiac transplantation. Cardiac autonomic activity was determined by power spectral analysis of short-term heart rate variability. The heart rate variability before cardiac transplantation was compared with that on the day before left ventricular assist device implantation. The standard deviation of the mean of the R-R intervals of the electrocardiogram, an index of vagal activity, increased to 27 +/- 7 ms from 8 +/- 0.6 ms. The modulus of power spectral components increased. Low frequency (sympathetic activity) and high frequency power (vagal activity) increased by a mean of 9 and 22 times of each baseline value (low frequency power, 5.2 +/- 3.0 ms2; high frequency power, 2.1 +/- 0.7 ms2). The low over high frequency power ratio decreased substantially, indicating an improvement of cardiac sympatho-vagal balance. The study results suggest that left ventricular assist device support before cardiac transplantation may exert a favorable effect on cardiac autonomic control in patients with severe heart failure.

Traveling-Wave Tubes

NASA Technical Reports Server (NTRS)

Kory, Carol L.

1998-01-01

The traveling-wave tube (TWT) is a vacuum device invented in the early 1940's used for amplification at microwave frequencies. Amplification is attained by surrendering kinetic energy from an electron beam to a radio frequency (RF) electromagnetic wave. The demand for vacuum devices has been decreased largely by the advent of solid-state devices. However, although solid state devices have replaced vacuum devices in many areas, there are still many applications such as radar, electronic countermeasures and satellite communications, that require operating characteristics such as high power (Watts to Megawatts), high frequency (below 1 GHz to over 100 GHz) and large bandwidth that only vacuum devices can provide. Vacuum devices are also deemed irreplaceable in the music industry where musicians treasure their tube-based amplifiers claiming that the solid-state and digital counterparts could never provide the same "warmth" (3). The term traveling-wave tube includes both fast-wave and slow-wave devices. This article will concentrate on slow-wave devices as the vast majority of TWTs in operation fall into this category.

Piezoelectric Vibrational and Acoustic Alert for a Personal Communication Device

NASA Technical Reports Server (NTRS)

Woodard, Stanley E. (Inventor); Hellbaum, Richard F. (Inventor); Daugherty, Robert H. (Inventor); Scholz, Raymond C. (Inventor); Little, Bruce D. (Inventor); Fox, Robert L. (Inventor); Denhardt, Gerald A. (Inventor); Jang, SeGon (Inventor); Balein, Rizza (Inventor)

2001-01-01

An alert apparatus for a personal communication device includes a mechanically prestressed piezoelectric wafer positioned within the personal communication device and an alternating voltage input line coupled at two points of the wafer where polarity is recognized. The alert apparatus also includes a variable frequency device coupled to the alternating voltage input line, operative to switch the alternating voltage on the alternating voltage input line at least between an alternating voltage having a first frequency and an alternating voltage having a second frequency. The first frequency is preferably sufficiently high so as to cause the wafer to vibrate at a resulting frequency that produces a sound perceptible by a human ear, and the second frequency is preferably sufficiently low so as to cause the wafer to vibrate at a resulting frequency that produces a vibration readily felt by a holder of the personal communication device.

Gender and vocal production mode discrimination using the high frequencies for speech and singing

PubMed Central

Monson, Brian B.; Lotto, Andrew J.; Story, Brad H.

2014-01-01

Humans routinely produce acoustical energy at frequencies above 6 kHz during vocalization, but this frequency range is often not represented in communication devices and speech perception research. Recent advancements toward high-definition (HD) voice and extended bandwidth hearing aids have increased the interest in the high frequencies. The potential perceptual information provided by high-frequency energy (HFE) is not well characterized. We found that humans can accomplish tasks of gender discrimination and vocal production mode discrimination (speech vs. singing) when presented with acoustic stimuli containing only HFE at both amplified and normal levels. Performance in these tasks was robust in the presence of low-frequency masking noise. No substantial learning effect was observed. Listeners also were able to identify the sung and spoken text (excerpts from “The Star-Spangled Banner”) with very few exposures. These results add to the increasing evidence that the high frequencies provide at least redundant information about the vocal signal, suggesting that its representation in communication devices (e.g., cell phones, hearing aids, and cochlear implants) and speech/voice synthesizers could improve these devices and benefit normal-hearing and hearing-impaired listeners. PMID:25400613

Fractal-Inspired Subwavelength Geometric Inclusions for Improvement of High-Frequency Electromagnetic Devices

NASA Astrophysics Data System (ADS)

Smith, Kathryn Leigh

This dissertation presents research results demonstrating the efficacy of fractal-inspired subwavelength geometric inclusions for improvement of high-frequency electromagnetic devices. It begins with a review of the open literature in the area of fractal applications in antennas and metamaterials. This is followed by a detailed discussion of three high-frequency electromagnetic devices that demonstrate performance improvement through incorporation of subwavelength geometric design elements. The first of these devices is a spherical spiral metamaterial unit cell that was developed as a three-dimensional fractal expansion of the traditional split ring resonator, and is shown to be capable of producing broadband negative permeability, negative permittivity, or both, depending solely on the orientation of the unit cells with respect to the incident electric field. The second device is a ringed rectangular patch antenna that has four resonant frequencies. All four of these operative frequencies are shown to produce similar radiation patterns, which also closely match the pattern of a traditional patch antenna. Several minor geometric modifications of the basic shape of the device are also presented, and are shown to enable modification of the number of resonances, as well as tuning of frequencies of resonance. The third and final topic is a modified horn antenna that incorporates a spiral metamaterial as a phase-shifting device in order to achieve circularly polarized radiation. The handedness of the radiated wave is shown to be tunable through simple reorientation of the loading unit cells. In each of these cases, electrically-small geometric modification of existing device geometries is shown to greatly affect performance, either by increasing bandwidth, by inducing multiband behavior, or by enabling exotic radiation characteristics.

Frequency Rectification Applied to Piezoelectric Energy Harvesting and Improving Available Power of Piezoelectric Motors

NASA Astrophysics Data System (ADS)

Kuroda, Kazuaki; LCGT Collaboration

Piezoelectric materials are just now, within the last decade, coming into their own as a commercial material. Capable of converting energy from the mechanical domain to the electrical domain; piezos are ideal sensors, vibration dampers, energy harvesters, and actuators. Frequency rectification, or the conversion of small, high frequency piezoelectric vibrations into useful low frequency actuation, is required to obtain widespread industrial use of piezoelectric devices. This work examines three manifestations of piezoelectric frequency rectification: energy harvesting, a hydraulic motor, and friction based commercial-off-the-shelf motors. An energy harvesting device is developed, manufactured, and tested in this work, resulting in the development of a high Energy Density (J/m 3), high Power Density (W/m3) energy harvester. The device is shown to have an Energy Density nearly twice that of a similar conventional energy harvesting device. The result of this work is the development of an energy harvesting system that generates more energy in a given volume of piezoelectric material, opening the possibility of miniaturization of energy harvesting devices. Also presented is an effort to integrate a high frequency, high flow rate micromachined valve array into a PiezoHydraulic Pump (PHP), enabling resonant operation of the PHP. Currently, the device is limited by the resonant frequency of the proprietary passive check valves. The PHP is fully characterized, and the microvalve array is tested to determine its resonant frequency in a fluid medium. The valve testing resulted in a resonant frequency of 6.9 kHz, slightly lower than the target operating frequency of 10 kHz. Finally, the results of an examination of frequency rectification as applied to COTS piezoelectric motors are presented. Currently, motors are almost universally characterized based upon their available mechanical power. A better comparison is one based upon the actual Energy Density of the piezoelectric material utilized in the motor compared to the theoretical maximum Energy Density under the motor operating conditions (i.e., frequency, applied electric field). The result of this work is a more descriptive metric to evaluate piezoelectric motors that provides information on the effectiveness of the motor drive train; that is, how effectively the motion of the piezoelectric is transferred to the outside world.

Ultra-high-frequency chaos in a time-delay electronic device with band-limited feedback.

PubMed

Illing, Lucas; Gauthier, Daniel J

2006-09-01

We report an experimental study of ultra-high-frequency chaotic dynamics generated in a delay-dynamical electronic device. It consists of a transistor-based nonlinearity, commercially-available amplifiers, and a transmission-line for feedback. The feedback is band-limited, allowing tuning of the characteristic time-scales of both the periodic and high-dimensional chaotic oscillations that can be generated with the device. As an example, periodic oscillations ranging from 48 to 913 MHz are demonstrated. We develop a model and use it to compare the experimentally observed Hopf bifurcation of the steady-state to existing theory [Illing and Gauthier, Physica D 210, 180 (2005)]. We find good quantitative agreement of the predicted and the measured bifurcation threshold, bifurcation type and oscillation frequency. Numerical integration of the model yields quasiperiodic and high dimensional chaotic solutions (Lyapunov dimension approximately 13), which match qualitatively the observed device dynamics.

CMOS compatible fabrication process of MEMS resonator for timing reference and sensing application

NASA Astrophysics Data System (ADS)

Huynh, Duc H.; Nguyen, Phuong D.; Nguyen, Thanh C.; Skafidas, Stan; Evans, Robin

2015-12-01

Frequency reference and timing control devices are ubiquitous in electronic applications. There is at least one resonator required for each of this device. Currently electromechanical resonators such as crystal resonator, ceramic resonator are the ultimate choices. This tendency will probably keep going for many more years. However, current market demands for small size, low power consumption, cheap and reliable products, has divulged many limitations of this type of resonators. They cannot be integrated into standard CMOS (Complement metaloxide- semiconductor) IC (Integrated Circuit) due to material and fabrication process incompatibility. Currently, these devices are off-chip and they require external circuitries to interface with the ICs. This configuration significantly increases the overall size and cost of the entire electronic system. In addition, extra external connection, especially at high frequency, will potentially create negative impacts on the performance of the entire system due to signal degradation and parasitic effects. Furthermore, due to off-chip packaging nature, these devices are quite expensive, particularly for high frequency and high quality factor devices. To address these issues, researchers have been intensively studying on an alternative for type of resonator by utilizing the new emerging MEMS (Micro-electro-mechanical systems) technology. Recent progress in this field has demonstrated a MEMS resonator with resonant frequency of 2.97 GHz and quality factor (measured in vacuum) of 42900. Despite this great achievement, this prototype is still far from being fully integrated into CMOS system due to incompatibility in fabrication process and its high series motional impedance. On the other hand, fully integrated MEMS resonator had been demonstrated but at lower frequency and quality factor. We propose a design and fabrication process for a low cost, high frequency and a high quality MEMS resonator, which can be integrated into a standard CMOS IC. This device is expected to operate in hundreds of Mhz frequency range; quality factor surpasses 10000 and series motional impedance low enough that could be matching into conventional system without enormous effort. This MEMS resonator can be used in the design of many blocks in wireless and RF (Radio Frequency) systems such as low phase noise oscillator, band pass filter, power amplifier and in many sensing application.

High Speed Terahertz Modulator on the Chip Based on Tunable Terahertz Slot Waveguide

PubMed Central

Singh, P. K.; Sonkusale, S.

2017-01-01

This paper presents an on-chip device that can perform gigahertz-rate amplitude modulation and switching of broadband terahertz electromagnetic waves. The operation of the device is based on the interaction of confined THz waves in a novel slot waveguide with an electronically tunable two dimensional electron gas (2DEG) that controls the loss of the THz wave propagating through this waveguide. A prototype device is fabricated which shows THz intensity modulation of 96% at 0.25 THz carrier frequency with low insertion loss and device length as small as 100 microns. The demonstrated modulation cutoff frequency exceeds 14 GHz indicating potential for the high-speed modulation of terahertz waves. The entire device operates at room temperature with low drive voltage (<2 V) and zero DC power consumption. The device architecture has potential for realization of the next generation of on-chip modulators and switches at THz frequencies. PMID:28102306

High-frequency profile in adolescents and its relationship with the use of personal stereo devices.

PubMed

Silvestre, Renata Almeida Araújo; Ribas, Ângela; Hammerschmidt, Rogério; de Lacerda, Adriana Bender Moreira

2016-01-01

To analyze and correlate the audiometric findings of high frequencies (9-16 kHz) in adolescents with their hearing habits and attitudes, in order to prevent noise-induced hearing loss. This was a descriptive cross-sectional study, which included 125 adolescents in a sample of normal-hearing students, at a state school. The subjects performed high-frequency audiometry testing and answered a self-administered questionnaire addressing information on sound habits concerning the use of personal stereo devices. The sample was divided according to the exposure characteristics (time, duration, intensity, etc.) and the results were compared with the observed thresholds, through the difference in proportions test, chi-squared, Student's t-test, and ANOVA, all at a significance level of 0.05. Average high-frequency thresholds were registered below 15 dB HL and no significant correlation was found between high frequency audiometric findings and the degree of exposure. The prevalence of harmful sound habits due to the use of personal stereo devices is high in the adolescent population, but there was no correlation between exposure to high sound pressure levels through personal stereos and the high-frequency thresholds in this population. Copyright © 2016 Sociedade Brasileira de Pediatria. Published by Elsevier Editora Ltda. All rights reserved.

High-frequency and high-quality silicon carbide optomechanical microresonators

PubMed Central

Lu, Xiyuan; Lee, Jonathan Y.; Lin, Qiang

2015-01-01

Silicon carbide (SiC) exhibits excellent material properties attractive for broad applications. We demonstrate the first SiC optomechanical microresonators that integrate high mechanical frequency, high mechanical quality, and high optical quality into a single device. The radial-breathing mechanical mode has a mechanical frequency up to 1.69 GHz with a mechanical Q around 5500 in atmosphere, which corresponds to a fm · Qm product as high as 9.47 × 1012 Hz. The strong optomechanical coupling allows us to efficiently excite and probe the coherent mechanical oscillation by optical waves. The demonstrated devices, in combination with the superior thermal property, chemical inertness, and defect characteristics of SiC, show great potential for applications in metrology, sensing, and quantum photonics, particularly in harsh environments that are challenging for other device platforms. PMID:26585637

The high frequency light load fatigue testing machine based on giant magnetostrictive material and stroke multiplier

NASA Astrophysics Data System (ADS)

Wang, M. D.; Li, D. S.; Huang, Y.; Zhang, C.; Zhong, K. M.; Sun, L. N.

2013-08-01

In the notebook and clamshell mobile phone, data communication wire often requires repeated bending. Generally, communication wire with the actual application conditions, the test data cannot assess bending resistance performance of data communication wire is tested conventionally using wires with weights of 90 degree to test bending number, this test method and device is not fully reflect the fatigue performance in high frequency and light load application condition, at the same time it has a large difference between the test data of the long-term reliability of high frequency and low load conditions. In this paper, high frequency light load fatigue testing machine based on the giant magnetostrictive material and stroke multiplier is put forward, in which internal reflux stroke multiplier is driven by giant magnetostrictive material to realize the rapid movement of light load. This fatigue testing device has the following advantages: (1) When the load is far less than the friction, reducing friction is very effective to improve the device performance. Because the body is symmetrical, the friction loss of radial does not exist in theory, so the stress situation of mechanism is good with high transmission efficiency and long service life. (2) The installation position of the output hydraulic cylinder, can be arranged conveniently as ordinary cylinder. (3) Reciprocating frequency, displacement and speed of high frequency movement can be programmed easily to change with higher position precision. (4)Hydraulic oil in this device is closed to transmit, which does not produce any environment pollution. The device has no hydraulic pump and tank, and less energy conversion processes, so it is with the trend of green manufacturing.

Performance evaluation of a high power DC-DC boost converter for PV applications using SiC power devices

NASA Astrophysics Data System (ADS)

Almasoudi, Fahad M.; Alatawi, Khaled S.; Matin, Mohammad

2016-09-01

The development of Wide band gap (WBG) power devices has been attracted by many commercial companies to be available in the market because of their enormous advantages over the traditional Si power devices. An example of WBG material is SiC, which offers a number of advantages over Si material. For example, SiC has the ability of blocking higher voltages, reducing switching and conduction losses and supports high switching frequency. Consequently, SiC power devices have become the affordable choice for high frequency and power application. The goal of this paper is to study the performance of 4.5 kW, 200 kHz, 600V DC-DC boost converter operating in continuous conduction mode (CCM) for PV applications. The switching behavior and turn on and turn off losses of different switching power devices such as SiC MOSFET, SiC normally ON JFET and Si MOSFET are investigated and analyzed. Moreover, a detailed comparison is provided to show the overall efficiency of the DC-DC boost converter with different switching power devices. It is found that the efficiency of SiC power switching devices are higher than the efficiency of Si-based switching devices due to low switching and conduction losses when operating at high frequencies. According to the result, the performance of SiC switching power devices dominate the conventional Si power devices in terms of low losses, high efficiency and high power density. Accordingly, SiC power switching devices are more appropriate for PV applications where a converter of smaller size with high efficiency, and cost effective is required.

Temperature dependence of frequency response characteristics in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Lu, Xubing; Minari, Takeo; Liu, Chuan; Kumatani, Akichika; Liu, J.-M.; Tsukagoshi, Kazuhito

2012-04-01

The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characteristics in pentacene-based organic field-effect transistors and metal-insulator-semiconductor capacitors. As the temperature decreased, the capacitance-voltage characteristics showed large frequency dispersion and a negative shift in the flat-band voltage at high frequencies. The cutoff frequency shows Arrhenius-type temperature dependence with different activation energy values for various gate voltages. These phenomena demonstrate the effects of charge trapping on the frequency response characteristics, since decreased mobility prevents a fast charge response for alternating current signals at low temperatures.

Re-active Passive (RAP) Devices for Control of Noise Transmission through a Panel

NASA Technical Reports Server (NTRS)

Carneal, James P.; Giovanardi, Marco; Fuller, Chris R.; Palumbo, Daniel L.

2008-01-01

Re-Active Passive (RAP) devices have been developed to control low frequency (<1000 Hz) noise transmission through a panel. These devices use a combination of active, re-active, and passive technologies packaged into a single unit to control a broad frequency range utilizing the strength of each technology over its best suited frequency range. The RAP device uses passive constrained layer damping to cover the relatively high frequency range (>200 Hz), reactive distributed vibration absorber) to cover the medium frequency range (75 to 250 Hz), and active control for controlling low frequencies (<200 Hz). The device was applied to control noise transmission through a panel mounted in a transmission loss test facility. Experimental results are presented for the bare panel, and combinations of passive treatment, reactive treatment, and active control. Results indicate that three RAP devices were able to increase the overall broadband (15-1000 Hz) transmission loss by 9.4 dB. These three devices added a total of 285 grams to the panel mass of 6.0 kg, or approximately 5%, not including control electronics.

Waveguide device and method for making same

DOEpatents

Forman, Michael A [San Francisco, CA

2007-08-14

A monolithic micromachined waveguide device or devices with low-loss, high-power handling, and near-optical frequency ranges is set forth. The waveguide and integrated devices are capable of transmitting near-optical frequencies due to optical-quality sidewall roughness. The device or devices are fabricated in parallel, may be mass produced using a LIGA manufacturing process, and may include a passive component such as a diplexer and/or an active capping layer capable of particularized signal processing of the waveforms propagated by the waveguide.

Acousto-optic modulation of a photonic crystal nanocavity with Lamb waves in microwave K band

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tadesse, Semere A.; School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455; Li, Huan

2015-11-16

Integrating nanoscale electromechanical transducers and nanophotonic devices potentially can enable acousto-optic devices to reach unprecedented high frequencies and modulation efficiency. Here, we demonstrate acousto-optic modulation of a photonic crystal nanocavity using Lamb waves with frequency up to 19 GHz, reaching the microwave K band. The devices are fabricated in suspended aluminum nitride membrane. Excitation of acoustic waves is achieved with interdigital transducers with period as small as 300 nm. Confining both acoustic wave and optical wave within the thickness of the membrane leads to improved acousto-optic modulation efficiency in these devices than that obtained in previous surface acoustic wave devices. Ourmore » system demonstrates a scalable optomechanical platform where strong acousto-optic coupling between cavity-confined photons and high frequency traveling phonons can be explored.« less

Physical Modeling of the Polyfrequency Filter-Compensating Device Based on the Capacitor-Coil

NASA Astrophysics Data System (ADS)

Butyrin, P. A.; Gusev, G. G.; Mikheev, D. V.; Shakirzianov, F. N.

2017-12-01

The paper presents the results of physical modeling and experimental study of the frequency characteristics of the polyfrequency filter-compensating device (PFCD) based on a capacitor-coil. The amplitude- frequency and phase-frequency characteristics of the physical PFCD model were constructed and its equivalent parameters were identified. The feasibility of a PFCD in the form of a single technical device with high technical and economic characteristics was experimentally proven. In the paper, recommendations for practical applications of the capacitor-coil-based PFCD are made and the advantages of the device over known standard passive filter-compensating devices are evaluated.

Detached rock evaluation device

DOEpatents

Hanson, David R.

1986-01-01

A rock detachment evaluation device (10) having an energy transducer unit 1) for sensing vibrations imparted to a subject rock (172) for converting the sensed vibrations into electrical signals, a low band pass filter unit (12) for receiving the electrical signal and transmitting only a low frequency segment thereof, a high band pass filter unit (13) for receiving the electrical signals and for transmitting only a high frequency segment thereof, a comparison unit (14) for receiving the low frequency and high frequency signals and for determining the difference in power between the signals, and a display unit (16) for displaying indicia of the difference, which provides a quantitative measure of rock detachment.

Pressure and Thrust Measurements of a High-Frequency Pulsed Detonation Tube

NASA Technical Reports Server (NTRS)

Nguyen, N.; Cutler, A. D.

2008-01-01

This paper describes measurements of a small-scale, high-frequency pulsed detonation tube. The device utilized a mixture of H2 fuel and air, which was injected into the device at frequencies of up to 1200 Hz. Pulsed detonations were demonstrated in an 8-inch long combustion volume, at about 600 Hz, for the quarter wave mode of resonance. The primary objective of this experiment was to measure the generated thrust. A mean value of thrust was measured up to 6.0 lb, corresponding to H2 flow based specific impulse of 2970 s. This value is comparable to measurements in H2-fueled pulsed detonation engines (PDEs). The injection and detonation frequency for this new experimental case was much higher than typical PDEs, where frequencies are usually less than 100 Hz. The compact size of the device and high frequency of detonation yields a thrust-per-unit-volume of approximately 2.0 pounds per cubic inch, and compares favorably with other experiments, which typically have thrust-per-unit-volume of order 0.01 pound per cubic inch. This much higher volumetric efficiency results in a potentially much more practical device than the typical PDE, for a wide range of potential applications, including high-speed boundary layer separation control, for example in hypersonic engine inlets, and propulsion for small aircraft and missiles.

[The evaluation of the consequences of electromagnetic irradiation of hands in operators of high-frequency welding devices].

PubMed

Rudakov, M L

2000-01-01

Method of secondary sources (method of integral equations) was applied to calculate specific absorbed intensity in hands of operators working at non-shielded high-frequency (27.12 Mhz) welding devices. The authors present calculations for "female" and "male" hand sizes, give recommendations on lower level of specific absorption.

Center for High-Frequency Microelectronics

DTIC Science & Technology

1992-08-31

34 IEEE Transactions on Electron Devices, 38, No. 6, pp. 1324-1333, June 1991. 185. C. C. Chen, R. K. Mains and G. I. Haddad, " High - Power Generation in...Weiss, J. Hu and W.-P. Hong, "Electronic 0 Properties of Power High Electron Mobility Transistors," Conference on Ballistic Electrons for Transistors...method at higher frequencies than previously believed. - Calculations of high - power generation modes in Si IMPATT devices in the 100-200 GHz range have

Characteristics of enhanced-mode AlGaN/GaN MIS HEMTs for millimeter wave applications

NASA Astrophysics Data System (ADS)

Lee, Jong-Min; Ahn, Ho-Kyun; Jung, Hyun-Wook; Shin, Min Jeong; Lim, Jong-Won

2017-09-01

In this paper, an enhanced-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) was developed by using 4-inch GaN HEMT process. We designed and fabricated Emode HEMTs and characterized device performance. To estimate the possibility of application for millimeter wave applications, we focused on the high frequency performance and power characteristics. To shift the threshold voltage of HEMTs we applied the Al2O3 insulator to the gate structure and adopted the gate recess technique. To increase the frequency performance the e-beam lithography technique was used to define the 0.15 um gate length. To evaluate the dc and high frequency performance, electrical characterization was performed. The threshold voltage was measured to be positive value by linear extrapolation from the transfer curve. The device leakage current is comparable to that of the depletion mode device. The current gain cut-off frequency and the maximum oscillation frequency of the E-mode device with a total gate width of 150 um were 55 GHz and 168 GHz, respectively. To confirm the power performance for mm-wave applications the load-pull test was performed. The measured power density of 2.32 W/mm was achieved at frequencies of 28 and 30 GHz.

[Comparative assessment of MR-semiotics of acutest intracerebral hematomas in low- and extra high-field frequency magnetic resonance tomography].

PubMed

Skvortsova, V I; Burenchev, D V; Tvorogova, T V; Guseva, O I; Prokhorov, A V; Smirnov, A M; Kupriianov, D A; Pirogov, Iu A

2009-01-01

An objective of the study was to compare sensitivity of low- and extra high-field frequency magnetic resonance (MR) tomography of acutest intracerebral hematomas (ICH) and to assess differences between symptoms in obtained images. A study was conducted using experimental ICH in rats (n=6). Hematomas were formed by two injections of autologic blood into the brain. MR-devices "Bio Spec 70/30" with magnetic field strength of 7 T and "Ellipse-150" with magnetic field strength of 0,15 T were used in the study. MR-tomography was carried out 3-5 h after the injections. Both MR-devices revealed the presence of pathological lesion in all animals. Extra highfield frequency MR-tomography showed the specific signs of ICH caused by the paramagnetic effect of deoxyhemoglobin in T2 and T2*-weighted images (WI) and low frequency MR-tomography - in T2*-WI only. The comparable sensitivity of low- and extra high-field frequency MR-devices in acutest ICH was established.

Investigation of Barium Ferrite, Searching for Soft Magnetic Materials in High Frequency Applications

NASA Astrophysics Data System (ADS)

Wu, Shuang; Kanada, Isao; Mewes, Tim; Mewes, Claudia; Mankey, Gary; Ariake, Yusuke; Suzuki, Takao

Soft ferrites have been extensively and intensively applied for high frequency device applications. Among them, Ba-ferrites substituted by Mn and Ti are particularly attractive as future soft magnetic material candidates for advanced high frequency device applications. However, very little has been known as to the intrinsic magnetic properties, such as damping parameter, which is crucial to develop high frequency devices. In the present study, much effort has been focused on fabrication of single crystal Ba-ferrites and measurements of damping parameter by FMR. Ba-ferrite samples consisted of many grains with various sizes have been prepared. The saturation magnetization and the magnetic anisotropy field of the sample are in reasonable agreement with the values in literature. The resonances positions in the FMR spectra over a wide frequency range also comply with theoretical predictions. However, the complex resonance shapes observed makes it difficult to extract dynamic magnetic property. Possible reasons are the demagnetization field originating from irregular sample shape or existence of multiple grains in the samples. S.W. acknowledges the support under the TDK Scholar Program.

Re-Active Passive devices for control of noise transmission through a panel

NASA Astrophysics Data System (ADS)

Carneal, James P.; Giovanardi, Marco; Fuller, Chris R.; Palumbo, Dan

2008-01-01

Re-Active Passive devices have been developed to control low-frequency (<1000 Hz) noise transmission through a panel. These devices use a combination of active, re-active, and passive technologies packaged into a single unit to control a broad frequency range utilizing the strength of each technology over its best suited frequency range. The Re-Active Passive device uses passive constrained layer damping to cover relatively high-frequency range (>150 Hz), reactive distributed vibration absorber to cover the medium-frequency range (50-200 Hz), and active control for controlling low frequencies (<150 Hz). The actuator was applied to control noise transmission through a panel mounted in the Transmission Loss Test Facility at Virginia Tech. Experimental results are presented for the bare panel, and combinations of passive treatment, reactive treatment, and active control. Results indicate that three Re-Active Passive devices were able to increase the overall broadband (15-1000 Hz) transmission loss by 9.4 dB. These three devices added a total of 285 g to the panel mass of 6.0 kg, or approximately 5%, not including control electronics.

GaN-on-Silicon - Present capabilities and future directions

NASA Astrophysics Data System (ADS)

Boles, Timothy

2018-02-01

Gallium Nitride, in the form of epitaxial HEMT transistors on various substrate materials, is the newest and most promising semiconductor technology for high performance devices in the RF, microwave, and mmW arenas. This is particularly true for GaN-on-Silicon based devices and MMIC's which enable both state-of-the-art high frequency functionality and the ability to scale production into large wafer diameter CMOS foundries. The design and development of GaN-on-Silicon structures and devices will be presented beginning with the basic material parameters, growth of the required epitaxial construction, and leading to the fundamental operational theory of high frequency, high power HEMTs. In this discussion comparisons will be made with alternative substrate materials with emphasis on contrasting the inherent advantages of a silicon based system. Theory of operation of microwave and mmW high power HEMT devices will be presented with special emphasis on fundamental limitations of device performance including inherent frequency limiting transit time analysis, required impedance transformations, internal and external parasitic reactance, thermal impedance optimization, and challenges improved by full integration into monolithic MMICs. Lastly, future directions for implementing GaN-on-Silicon into mainstream CMOS silicon semiconductor technologies will be discussed.

High energy microelectromechanical oscillator based on the electrostatic microactuator

NASA Astrophysics Data System (ADS)

Baginsky, I.; Kostsov, Edvard; Sobolev, Victor

2008-03-01

Electrostatic high energy micromotor based on the ferroelectric films is studied as applied to microelectromechanical devices operating in vibrational mode. It is shown that the micromotor can be efficiently used in high frequency micromechanical vibrators that are used in high energy MEMS devices, such as micropumps, microvalves, microinjectors, adaptive microoptic devices etc.

III-V HEMTs: low-noise devices for high-frequency applications

NASA Astrophysics Data System (ADS)

Mateos, Javier

2003-05-01

With the recent development of broadband and satellite communications, one of the main engines for the advance of modern Microelectronics is the fabrication of devices with increasing cutoff frequency and lowest possible level of noise. Even if heterojunction bipolar devices (HBTs) have reached a good frequency performance, the top end of high frequency low-noise applications is monopolized by unipolar devices, mainly HEMTs (High Electron Mobility Transistors). In particular, within the vast family of heterojunction devices, the best results ever reported in the W-band have been obtained with InP based HEMTs using the AlInAs/InGaAs material system, improving those of usual GaAs based pseudomorphic HEMTs. In field effect devices, the reduction of the gate length (Lg) up to the technological limit is the main way to achieve the maximum performances. But the design of the devices is not so simple, when reducing the gate length it is convenient to keep constant the aspect ratio (gate length over gate-to-channel distance) in order to limit short channel effects. This operation can lead to the appearance of other unwanted effects, like the depletion of the channel due to the surface potential or the tunneling of electrons from the channel to the gate. Therefore, in order to optimize the high frequency or the low-noise behavior of the devices (that usually can not be reached together) not only the gate-to-channel distance must be chosen carefully, but also many other technological parameters (both geometrical and electrical): composition of materials, width of the device, length, depth and position of the recess, thickness and doping of the different layers, etc. Historically, these parameters have been optimized by classical simulation techniques or, when such simulations are not physically applicable, by the expensive 'test and error' procedure. With the use of computer simulation, the design optimization can be made in a short time and with no money spent. However, classical modelling of electronic devices meets important difficulties when dealing with advanced transistors, mainly due to their small size, and the Monte Carlo technique appears as the only possible choice

Automatic Frequency Controller for Power Amplifiers Used in Bio-Implanted Applications: Issues and Challenges

PubMed Central

Hannan, Mahammad A.; Hussein, Hussein A.; Mutashar, Saad; Samad, Salina A.; Hussain, Aini

2014-01-01

With the development of communication technologies, the use of wireless systems in biomedical implanted devices has become very useful. Bio-implantable devices are electronic devices which are used for treatment and monitoring brain implants, pacemakers, cochlear implants, retinal implants and so on. The inductive coupling link is used to transmit power and data between the primary and secondary sides of the biomedical implanted system, in which efficient power amplifier is very much needed to ensure the best data transmission rates and low power losses. However, the efficiency of the implanted devices depends on the circuit design, controller, load variation, changes of radio frequency coil's mutual displacement and coupling coefficients. This paper provides a comprehensive survey on various power amplifier classes and their characteristics, efficiency and controller techniques that have been used in bio-implants. The automatic frequency controller used in biomedical implants such as gate drive switching control, closed loop power control, voltage controlled oscillator, capacitor control and microcontroller frequency control have been explained. Most of these techniques keep the resonance frequency stable in transcutaneous power transfer between the external coil and the coil implanted inside the body. Detailed information including carrier frequency, power efficiency, coils displacement, power consumption, supplied voltage and CMOS chip for the controllers techniques are investigated and summarized in the provided tables. From the rigorous review, it is observed that the existing automatic frequency controller technologies are more or less can capable of performing well in the implant devices; however, the systems are still not up to the mark. Accordingly, current challenges and problems of the typical automatic frequency controller techniques for power amplifiers are illustrated, with a brief suggestions and discussion section concerning the progress of implanted device research in the future. This review will hopefully lead to increasing efforts towards the development of low powered, highly efficient, high data rate and reliable automatic frequency controllers for implanted devices. PMID:25615728

Ground EMI: designing the future trends in shallow depth surveying

NASA Astrophysics Data System (ADS)

Thiesson, J.; Schamper, C.; Simon, F. X.; Tabbagh, A.

2017-12-01

In theory, electromagnetic induction phenomena are driven by three fundamental properties (conductivity, susceptibility, permittivity). Since the 1930's, the developments of EMI prospecting were based on assumptions (Low frequency VS High frequency, low/high induction number). The design of the devices was focused on specific aims (diffusive/propagative, mapping/sounding) and, in the last thirty years the progressive transition from analog to numeric electronics completely enhanced the potency of measurements (multi-channeling, automatic positioning) a) as it did in model computation. In the field of metric sized devices for lower depths of investigation, the measurements have been first restricted to electrical conductivity. However, the measurement of the magnetic susceptibility proved to be possible thanks to in phase and quadrature separation, and the last developed commercially available multi-frequency and/or multi-receivers devices permit, thanks to accurate calibration, the measurements of the three properties with various geometries or frequencies simultaneously. The aims of this study is to present theoretical results in order to give hints for designing a device which can be optimal to evaluate the three properties and their frequency dependence.

High-frequency Lamb wave device composed of MEMS structure using LiNbO3 thin film and air gap.

PubMed

Kadota, Michio; Ogami, Takashi; Yamamoto, Kansho; Tochishita, Hikari; Negoro, Yasuhiro

2010-11-01

High-frequency devices operating at 3 GHz or higher are required, for instance, for future 4th generation mobile phone systems in Japan. Using a substrate with a high acoustic velocity is one method to realize a high-frequency acoustic or elastic device. A Lamb wave has a high velocity when the substrate thickness is thin. To realize a high-frequency device operating at 3 GHz or higher using a Lamb wave, a very thin (less than 0.5 μm thick) single-crystal plate must be used. It is difficult to fabricate such a very thin single crystal plate. The authors have attempted to use a c-axis orientated epitaxial LiNbO(3) thin film deposited by a chemical vapor deposition system (CVD) instead of using a thin LiNbO(3) single crystal plate. Lamb wave resonators composed of a interdigital transducer (IDT)/the LiNbO(3) film/air gap/base substrate structure like micro-electromechanical system (MEMS) transducers were fabricated. These resonators have shown a high frequency of 4.5 and 6.3 GHz, which correspond to very high acoustic velocities of 14,000 and 12,500 m/s, respectively, have excellent characteristics such as a ratio of resonant and antiresonant impedance of 52 and 38 dB and a wide band of 7.2% and 3.7%, respectively, and do not have spurious responses caused by the 0th modes of shear horizontal (SH(0)) and symmetric (S(0)) modes.

Relay protection features of frequency-adjustable electric drive

NASA Astrophysics Data System (ADS)

Kuprienko, V. V.

2018-03-01

The features of relay protection of high-voltage electric motors in composition of the frequency-adjustable electric drive are considered in the article. The influence of frequency converters on the stability of the operation of various types of relay protection used on electric motors is noted. Variants of circuits for connecting relay protection devices are suggested. The need to develop special relay protection devices for a frequency-adjustable electric drive is substantiated.

Signal and Noise in FET-Nanopore Devices.

PubMed

Parkin, William M; Drndić, Marija

2018-02-23

The combination of a nanopore with a local field-effect transistor (FET-nanopore), like a nanoribbon, nanotube, or nanowire, in order to sense single molecules translocating through the pore is promising for DNA sequencing at megahertz bandwidths. Previously, it was experimentally determined that the detection mechanism was due to local potential fluctuations that arise when an analyte enters a nanopore and constricts ion flow through it, rather than the theoretically proposed mechanism of direct charge coupling between the DNA and nanowire. However, there has been little discussion on the experimentally observed detection mechanism and its relation to the operation of real devices. We model the intrinsic signal and noise in such an FET-nanopore device and compare the results to the ionic current signal. The physical dimensions of DNA molecules limit the change in gate voltage on the FET to below 40 mV. We discuss the low-frequency flicker noise (<10 kHz), medium-frequency thermal noise (<100 kHz), and high-frequency capacitive noise (>100 kHz) in FET-nanopore devices. At bandwidths dominated by thermal noise, the signal-to-noise ratio in FET-nanopore devices is lower than in the ionic current signal. At high frequencies, where noise due to parasitic capacitances in the amplifier and chip is the dominant source of noise in ionic current measurements, high-transconductance FET-nanopore devices can outperform ionic current measurements.

Low-frequency vocalizations in the Florida manatee (Trichechus manatus latirostris)

NASA Astrophysics Data System (ADS)

Frisch, Katherine; Frisch, Stefan

2003-10-01

Vocalizations produced by Florida manatees (Trichechus manatus latirostris) have been characterized as being of relatively high frequency, with fundamental tones ranging from 2500-5000 Hz. These sounds have been variously described as squeaks, squeals, and chirps. Vocalizations below 500 Hz have not been previously reported. Two captive-born Florida manatees were recorded at Mote Marine Laboratory in Sarasota, Florida. The analysis of these vocalizations provides evidence of a new category of low-frequency sounds produced by manatees. These sounds are often heard in conjunction with higher-frequency vocalizations. The low-frequency vocalizations are relatively brief and of low amplitude. These vocalizations are perceived as a series of impulses rather than a low-frequency periodic tone. Knowledge of these low-frequency vocalizations could be useful to those developing future management strategies. Interest has recently increased in the development of acoustic detection and deterrence devices to reduce the number of manatee watercraft interactions. The design of appropriate devices must take into account the apparent ability of manatees to perceive and produce sounds of both high and low frequency. It is also important to consider the possibility that acoustic deterrence devices may disrupt the potentially communicative frequencies of manatee vocalizations.

Interference with the operation of medical devices resulting from the use of radio frequency identification technology.

PubMed

Houliston, Bryan; Parry, David; Webster, Craig S; Merry, Alan F

2009-06-19

To replicate electromagnetic interference (EMI) with a common drug infusion device resulting from the use of radio frequency identification (RFID) technology in a simulated operating theatre environment. An infusion pump, of a type previously reported as having failed due to RFID EMI, was placed in radio frequency (RF) fields of various strengths, and its operation observed. Different strength RF fields were created by varying the number of RFID readers, the use of a high-gain RFID antenna, the distance between the reader(s) and the infusion pump, and the presence of an RFID tag on the infusion pump. The infusion pump was not affected by low-power RFID readers, even when in direct contact. The pump was disrupted by a high-power reader at 10 cm distance when an RFID tag was attached, and by a combination of high-power and low-power readers at 10 cm distance. Electronic medical devices may fail in the presence of high-power RFID readers, especially if the device is tagged. However, low-power RFID readers appear to be safer.

Analysis of high-k spacer on symmetric underlap DG-MOSFET with Gate Stack architecture

NASA Astrophysics Data System (ADS)

Das, Rahul; Chakraborty, Shramana; Dasgupta, Arpan; Dutta, Arka; Kundu, Atanu; Sarkar, Chandan K.

2016-09-01

This paper shows the systematic study of underlap double gate (U-DG) NMOSFETs with Gate Stack (GS) under the influence of high-k spacers. In highly scaled devices, underlap is used at the Source and Drain side so as to reduce the short channel effects (SCE's), however, it significantly reduces the on current due to the increased channel resistance. To overcome these drawbacks, the use of high-k spacers is projected as one of the remedies. In this paper, the analog performance of the devices is studied on the basis of parameters like transconductance (gm), transconductance generation factor (gm/Id) and intrinsic gain (gmro). The RF performance is analyzed on the merits of intrinsic capacitance (Cgd, Cgs), resistance (Rgd, Rgs), transport delay (τm), inductance (Lsd), cutoff frequency (fT), and the maximum frequency of oscillation (fmax). The circuit performance of the devices are studied by implementing the device as the driver MOSFET in a Single Stage Common Source Amplifier. The Gain Bandwidth Product (GBW) has been analyzed from the frequency response of the circuit.

Low-frequency 1/f noise in graphene devices

NASA Astrophysics Data System (ADS)

Balandin, Alexander A.

2013-08-01

Low-frequency noise with a spectral density that depends inversely on frequency has been observed in a wide variety of systems including current fluctuations in resistors, intensity fluctuations in music and signals in human cognition. In electronics, the phenomenon, which is known as 1/f noise, flicker noise or excess noise, hampers the operation of numerous devices and circuits, and can be a significant impediment to the development of practical applications from new materials. Graphene offers unique opportunities for studying 1/f noise because of its two-dimensional structure and widely tunable two-dimensional carrier concentration. The creation of practical graphene-based devices will also depend on our ability to understand and control the low-frequency noise in this material system. Here, the characteristic features of 1/f noise in graphene and few-layer graphene are reviewed, and the implications of such noise for the development of graphene-based electronics including high-frequency devices and sensors are examined.

Low-frequency 1/f noise in graphene devices.

PubMed

Balandin, Alexander A

2013-08-01

Low-frequency noise with a spectral density that depends inversely on frequency has been observed in a wide variety of systems including current fluctuations in resistors, intensity fluctuations in music and signals in human cognition. In electronics, the phenomenon, which is known as 1/f noise, flicker noise or excess noise, hampers the operation of numerous devices and circuits, and can be a significant impediment to the development of practical applications from new materials. Graphene offers unique opportunities for studying 1/f noise because of its two-dimensional structure and widely tunable two-dimensional carrier concentration. The creation of practical graphene-based devices will also depend on our ability to understand and control the low-frequency noise in this material system. Here, the characteristic features of 1/f noise in graphene and few-layer graphene are reviewed, and the implications of such noise for the development of graphene-based electronics including high-frequency devices and sensors are examined.

Study of switching transients in high frequency converters

NASA Technical Reports Server (NTRS)

Zinger, Donald S.; Elbuluk, Malik E.; Lee, Tony

1993-01-01

As the semiconductor technologies progress rapidly, the power densities and switching frequencies of many power devices are improved. With the existing technology, high frequency power systems become possible. Use of such a system is advantageous in many aspects. A high frequency ac source is used as the direct input to an ac/ac pulse-density-modulation (PDM) converter. This converter is a new concept which employs zero voltage switching techniques. However, the development of this converter is still in its infancy stage. There are problems associated with this converter such as a high on-voltage drop, switching transients, and zero-crossing detecting. Considering these problems, the switching speed and power handling capabilities of the MOS-Controlled Thyristor (MCT) makes the device the most promising candidate for this application. A complete insight of component considerations for building an ac/ac PDM converter for a high frequency power system is addressed. A power device review is first presented. The ac/ac PDM converter requires switches that can conduct bi-directional current and block bi-directional voltage. These bi-directional switches can be constructed using existing power devices. Different bi-directional switches for the converter are investigated. Detailed experimental studies of the characteristics of the MCT under hard switching and zero-voltage switching are also presented. One disadvantage of an ac/ac converter is that turn-on and turn-off of the switches has to be completed instantaneously when the ac source is at zero voltage. Otherwise shoot-through current or voltage spikes can occur which can be hazardous to the devices. In order for the devices to switch softly in the safe operating area even under non-ideal cases, a unique snubber circuit is used in each bi-directional switch. Detailed theory and experimental results for circuits using these snubbers are presented. A current regulated ac/ac PDM converter built using MCT's and IGBT's is evaluated.

High Power Broadband Millimeter Wave TWTs

NASA Astrophysics Data System (ADS)

James, Bill G.

1998-04-01

In the early 1980's the requirement for high power broadband millimeter wave sources encouraged the development of microwave vacuum device amplifiers for radar and communication systems. Many government funded programs were implemented for the development of high power broadband millimeter wave amplifiers that would meet the needs of the high power community. The tube design capable of meeting these goals was the slow wave coupled cavity traveling wave device, which had a proven technology base at the lower frequencies (X Band). However scaling this technology to the millimeter frequencies had severe shortcomings in both thermal and manufacturing design. These shortcomings were overcome with the development of the Ladder Circuit technology. In conjunction with the circuit development high power electron beam systems had to be developed for the generation of high rf powers. These beam systems had to be capable of many megawatts of beam power density and high current densities. The cathode technology required to be capable of operating at current densities of 10 amperes per square centimeter at long pulse lengths and high duty cycle. Since the introduction of the Ladder Circuit technology a number of high power broadband millimeter wave amplifiers have been developed and deployed in operating radar and communication systems. Broadband millimeter wave sources have been manufactured in the frequency range from 27 GHz to 100 GHz with power levels ranging from 100 watts CW to 10 kilowatts Peak at W band over a 2 GHz bandwidth. Also a 50 kW peak power and 10 kW average power device at Ka band with 2 GHz bandwidth has been developed. Today the power levels achieved by these devices are nearing the limits of this technology; therefore to gain a significant increase in power at the millimeter wave frequencies, other technologies will have to be considered, particularly fast wave devices. This paper will briefly review the ladder circuit technology and present the designs of a number of broadband high power devices developed at Ka and W band. The discussion will include the beam systems employed in these devices which are the highest power density linear beams generated to date. In conclusion the limits of the power generating capability of this technology will be presented.

GaN transistors on Si for switching and high-frequency applications

NASA Astrophysics Data System (ADS)

Ueda, Tetsuzo; Ishida, Masahiro; Tanaka, Tsuyoshi; Ueda, Daisuke

2014-10-01

In this paper, recent advances of GaN transistors on Si for switching and high-frequency applications are reviewed. Novel epitaxial structures including superlattice interlayers grown by metal organic chemical vapor deposition (MOCVD) relieve the strain and eliminate the cracks in the GaN over large-diameter Si substrates up to 8 in. As a new device structure for high-power switching application, Gate Injection Transistors (GITs) with a p-AlGaN gate over an AlGaN/GaN heterostructure successfully achieve normally-off operations maintaining high drain currents and low on-state resistances. Note that the GITs on Si are free from current collapse up to 600 V, by which the drain current would be markedly reduced after the application of high drain voltages. Highly efficient operations of an inverter and DC-DC converters are presented as promising applications of GITs for power switching. The high efficiencies in an inverter, a resonant LLC converter, and a point-of-load (POL) converter demonstrate the superior potential of the GaN transistors on Si. As for high-frequency transistors, AlGaN/GaN heterojuction field-effect transistors (HFETs) on Si designed specifically for microwave and millimeter-wave frequencies demonstrate a sufficiently high output power at these frequencies. Output powers of 203 W at 2.5 GHz and 10.7 W at 26.5 GHz are achieved by the fabricated GaN transistors. These devices for switching and high-frequency applications are very promising as future energy-efficient electronics because of their inherent low fabrication cost and superior device performance.

Frequency behavior of the residual current devices

NASA Astrophysics Data System (ADS)

Erdei, Z.; Horgos, M.; Lung, C.; Pop-Vadean, A.; Muresan, R.

2017-01-01

This paper presents an experimental investigation into the operating characteristic of residual current devices when in presence of a residual current at a frequency of 60Hz. In order to protect persons and equipment effectively the residual current devices are made to be very sensitive to the ground fault current or the touch current. Because of their high sensitivity the residual current circuit breakers are prone to tripping under no-fault conditions.

Portable Integrated Wireless Device Threat Assessment to Aircraft Radio Systems

NASA Technical Reports Server (NTRS)

Salud, Maria Theresa P.; Williams, Reuben A. (Technical Monitor)

2004-01-01

An assessment was conducted on multiple wireless local area network (WLAN) devices using the three wireless standards for spurious radiated emissions to determine their threat to aircraft radio navigation systems. The measurement process, data and analysis are provided for devices tested using IEEE 802.11a, IEEE 802.11b, and Bluetooth as well as data from portable laptops/tablet PCs and PDAs (grouping known as PEDs). A comparison was made between wireless LAN devices and portable electronic devices. Spurious radiated emissions were investigated in the radio frequency bands for the following aircraft systems: Instrument Landing System Localizer and Glideslope, Very High Frequency (VHF) Communication, VHF Omnidirectional Range, Traffic Collision Avoidance System, Air Traffic Control Radar Beacon System, Microwave Landing System and Global Positioning System. Since several of the contiguous navigation systems were grouped under one encompassing measurement frequency band, there were five measurement frequency bands where spurious radiated emissions data were collected for the PEDs and WLAN devices. The report also provides a comparison between emissions data and regulatory emission limit.

High-throughput formation and control of monodisperse liquid crystals droplets driven by an alternating current electric field in a microfluidic device

NASA Astrophysics Data System (ADS)

Belloul, M.; Bartolo, J.-F.; Ziraoui, B.; Coldren, F.; Taly, V.; El Abed, A. I.

2013-07-01

We investigate the effect of an applied ac high voltage on a confined stable nematic liquid crystal (LC) in a microfluidic device and show that this actuation leads to the formation of highly monodisperse microdroplets with an unexpected constant mean size over a large interval of the forcing frequency F and with a droplets production frequency f ≃2F. We show also that despite the nonlinear feature of the droplets formation mechanism, droplets size, and size distribution are governed simply by the LC flow rate Qd and the forcing frequency F.

Carbon nanotube transistor based high-frequency electronics

NASA Astrophysics Data System (ADS)

Schroter, Michael

At the nanoscale carbon nanotubes (CNTs) have higher carrier mobility and carrier velocity than most incumbent semiconductors. Thus CNT based field-effect transistors (FETs) are being considered as strong candidates for replacing existing MOSFETs in digital applications. In addition, the predicted high intrinsic transit frequency and the more recent finding of ways to achieve highly linear transfer characteristics have inspired investigations on analog high-frequency (HF) applications. High linearity is extremely valuable for an energy efficient usage of the frequency spectrum, particularly in mobile communications. Compared to digital applications, the much more relaxed constraints for CNT placement and lithography combined with already achieved operating frequencies of at least 10 GHz for fabricated devices make an early entry in the low GHz HF market more feasible than in large-scale digital circuits. Such a market entry would be extremely beneficial for funding the development of production CNTFET based process technology. This talk will provide an overview on the present status and feasibility of HF CNTFET technology will be given from an engineering point of view, including device modeling, experimental results, and existing roadblocks. Carbon nanotube transistor based high-frequency electronics.

High-frequency graphene voltage amplifier.

PubMed

Han, Shu-Jen; Jenkins, Keith A; Valdes Garcia, Alberto; Franklin, Aaron D; Bol, Ageeth A; Haensch, Wilfried

2011-09-14

While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate design with gate length of 500 nm. The graphene common-source amplifier exhibits ∼5 dB low frequency gain with the 3 dB bandwidth greater than 6 GHz. This first AC voltage gain demonstration of a GFET is attributed to the clear current saturation in the device, which is enabled by an ultrathin gate dielectric (4 nm HfO(2)) of the embedded gate structures. The device also shows extrinsic transconductance of 1.2 mS/μm at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date.

High-speed photodetectors.

PubMed

Anderson, L K; McMurtry, B J

1966-10-01

This paper is intended as a status report on high-speed detectors for the visible and near-infrared portion of the optical spectrum. Both vacuum and solid-state detectors are discussed, with the emphasis on those devices which can be used as direct (noncoherent) detectors of weak optical signals modulated at microwave frequencies. The best detectors for this application have internal current gain and in this regard the relevant properties and limitations of high-frequency secondary emission multiplication in vacuum tube devices and avalanche multiplication in p-n junctions are summarized.

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

NASA Technical Reports Server (NTRS)

Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Del Castillo, Linda Y.; Fitzpatrick, Fred; Chen, Yuan

2016-01-01

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

Low-Temperature Variation of Acoustic Velocity in PDMS for High-Frequency Applications.

PubMed

Streque, Jeremy; Rouxel, Didier; Talbi, Abdelkrim; Thomassey, Matthieu; Vincent, Brice

2018-05-01

Polydimethylsiloxane (PDMS) and other related silicon-based polymers are among the most widely employed elastomeric materials in microsystems, owing to their physical and chemical properties. Meanwhile, surface acoustic wave (SAW) and bulk acoustic wave (BAW) sensors and filters have been vastly explored for sensing and wireless applications. Many fields could benefit from the combined use of acoustic wave devices, and polydimethylsiloxane-based soft-substrates, microsystems, or packaging elements. The mechanical constants of PDMS strongly depend on frequency, similar to rubber materials. This brings to the exploration of the specific mechanical properties of PDMS encountered at high frequency, required for its exploitation in SAW or BAW devices. First, low-frequency mechanical behavior is confirmed from stress strain measurements, remaining useful for the exploitation of PDMS as a soft substrate or packaging material. The study, then, proposes a temperature-dependent, high-frequency mechanical study of PDMS based on Brillouin spectroscopy to determine the evolution of the longitudinal acoustic velocity in this material, which constitutes the main mechanical parameter for the design of acoustic wave devices. The PDMS glass transition is then retrieved by differential scanning calorimetry in order to confirm the observations made by Brillouin spectroscopy. This paper validates Brillouin spectroscopy as a very suitable characterization technique for the retrieval of longitudinal mechanical properties at low temperature, as a preliminary investigation for the design of acoustic wave devices coupled with soft materials.

Towards thermal noise free optomechanics

NASA Astrophysics Data System (ADS)

Page, Michael A.; Zhao, Chunnong; Blair, David G.; Ju, Li; Ma, Yiqiu; Pan, Huang-Wei; Chao, Shiuh; Mitrofanov, Valery P.; Sadeghian, Hamed

2016-11-01

Thermal noise generally greatly exceeds quantum noise in optomechanical devices unless the mechanical frequency is very high or the thermodynamic temperature is very low. This paper addresses the design concept for a novel optomechanical device capable of ultrahigh quality factors in the audio frequency band with negligible thermal noise. The proposed system consists of a minimally supported millimeter scale pendulum mounted in a double end-mirror sloshing cavity that is topologically equivalent to a membrane-in-the-middle cavity. The radiation pressure inside the high-finesse cavity allows for high optical stiffness, cancellation of terms which lead to unwanted negative damping and suppression of quantum radiation pressure noise. We solve the optical spring dynamics of the system using the Hamiltonian, find the noise spectral density and show that stable optical trapping is possible. We also assess various loss mechanisms, one of the most important being the acceleration loss due to the optical spring. We show that practical devices, starting from a centre-of-mass pendulum frequency of 0.1 Hz, could achieve a maximum quality factor of (1014) with optical spring stiffened frequency 1-10 kHz. Small resonators of mass 1 ≤ft(μ \\right) g or less could achieve a Q-factor of (1011) at a frequency of 100 kHz. Applications for such devices include white light cavities for improvement of gravitational wave detectors, or sensors able to operate near the quantum limit.

Modelling switching-time effects in high-frequency power conditioning networks

NASA Technical Reports Server (NTRS)

Owen, H. A.; Sloane, T. H.; Rimer, B. H.; Wilson, T. G.

1979-01-01

Power transistor networks which switch large currents in highly inductive environments are beginning to find application in the hundred kilohertz switching frequency range. Recent developments in the fabrication of metal-oxide-semiconductor field-effect transistors in the power device category have enhanced the movement toward higher switching frequencies. Models for switching devices and of the circuits in which they are imbedded are required to properly characterize the mechanisms responsible for turning on and turning off effects. Easily interpreted results in the form of oscilloscope-like plots assist in understanding the effects of parametric studies using topology oriented computer-aided analysis methods.

Tunable Magnetic Resonance in Microwave Spintronics Devices

NASA Technical Reports Server (NTRS)

Chen, Yunpeng; Fan, Xin; Xie, Yunsong; Zhou, Yang; Wang, Tao; Wilson, Jeffrey D.; Simons, Rainee N.; Chui, Sui-Tat; Xiao, John Q.

2015-01-01

Magnetic resonance is one of the key properties of magnetic materials for the application of microwave spintronics devices. The conventional method for tuning magnetic resonance is to use an electromagnet, which provides very limited tuning range. Hence, the quest for enhancing the magnetic resonance tuning range without using an electromagnet has attracted tremendous attention. In this paper, we exploit the huge exchange coupling field between magnetic interlayers, which is on the order of 4000 Oe and also the high frequency modes of coupled oscillators to enhance the tuning range. Furthermore, we demonstrate a new scheme to control the magnetic resonance frequency. Moreover, we report a shift in the magnetic resonance frequency as high as 20 GHz in CoFe based tunable microwave spintronics devices, which is 10X higher than conventional methods.

Tunable Magnetic Resonance in Microwave Spintronics Devices

NASA Technical Reports Server (NTRS)

Chen, Yunpeng; Fan, Xin; Xie, Yungsong; Zhou, Yang; Wang, Tao; Wilson, Jeffrey D.; Simons, Rainee N.; Chui, Sui-Tat; Xiao, John Q.

2015-01-01

Magnetic resonance is one of the key properties of magnetic materials for the application of microwave spintronics devices. The conventional method for tuning magnetic resonance is to use an electromagnet, which provides very limited tuning range. Hence, the quest for enhancing the magnetic resonance tuning range without using an electromagnet has attracted tremendous attention. In this paper, we exploit the huge exchange coupling field between magnetic interlayers, which is on the order of 4000 Oe and also the high frequency modes of coupled oscillators to enhance the tuning range. Furthermore, we demonstrate a new scheme to control the magnetic resonance frequency. Moreover, we report a shift in the magnetic resonance frequency as high as 20 GHz in CoFe-based tunable microwave spintronics devices, which is 10X higher than conventional methods.

77 FR 39471 - Small Takes of Marine Mammals Incidental to Specified Activities; Pile Driving in Port Townsend...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-07-03

... approximately 150 Hz and 160 kHz; High frequency cetaceans (six species of true porpoises, four species of river... porpoise and Dall's porpoise are classified as high frequency cetaceans (Southall et al., 2007). Pacific...) observed wild harbor seal reactions to high-frequency acoustic harassment devices around nine sites. Seals...

Piezoelectric energy harvesting from heartbeat vibrations for leadless pacemakers

NASA Astrophysics Data System (ADS)

Ansari, M. H.; Karami, M. Amin

2015-12-01

This paper studies energy harvesting from heartbeat vibrations using fan-folded piezoelectric beams. The generated energy from the heartbeat can be used to power a leadless pacemaker. In order to utilize the available 3 dimensional space to the energy harvester, we chose the fan-folded design. The proposed device consists of several piezoelectric beams stacked on top of each other. The size for this energy harvester is 2 cm by 0.5 cm by 1 cm, which makes the natural frequency very high. High natural frequency is one major concern about the micro-scaled energy harvesters. By utilizing the fan-folded geometry and adding tip mass and link mass to the configuration, this natural frequency is reduced to the desired range. This fan-folded design makes it possible to generate more than 10 μW of power. The proposed device does not incorporate magnets and is thus Magnetic resonance imaging (MRI) compatible. Although our device is a linear energy harvester, it is shown that the device is relatively insensitive to the heartrate. The natural frequencies and the mode shapes of the device are calculated. An analytical solution is presented and the method is verified by experimental investigation. We use a closed loop shaker controller and a shaker to simulate the heartbeat vibrations. The developed analytical model is verified through comparison of theoretical and experimental tip displacement and acceleration frequency response functions.

Applications and Methods of Operating a Three-dimensional Nano-electro-mechanical Resonator and Related Devices

NASA Technical Reports Server (NTRS)

Kaul, Anupama B. (Inventor); Epp, Larry W. (Inventor); Bagge, Leif (Inventor)

2013-01-01

Carbon nanofiber resonator devices, methods for use, and applications of said devices are disclosed. Carbon nanofiber resonator devices can be utilized in or as high Q resonators. Resonant frequency of these devices is a function of configuration of various conducting components within these devices. Such devices can find use, for example, in filtering and chemical detection.

Resonant-tunneling oscillators and multipliers for submillimeter receivers

NASA Technical Reports Server (NTRS)

Sollner, T. C. L. Gerhard

1988-01-01

Resonant tunneling through double-barrier heterostructures has attracted increasing interest recently, largely because of the fast charge transport it provides. In addition, the negative differential resistance regions that exist in the current-voltage (I-V) curve (peak-to-valley ratios of 3.5:1 at room temperature, and nearly 10:1 at 77 K, were measured) suggest that high-speed devices based on the character of the I-V curve should be possible. For example, the negative differential resistance region is capable of providing the gain necessary for high-frequency oscillations. In the laboratory attempts were made to increase the frequency and power of these oscillators and to demonstrate several different high-frequency devices.

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

NASA Technical Reports Server (NTRS)

Mueller, Carl; Alterovitz, Samuel; Croke, Edward; Ponchak, George

2004-01-01

System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.

Frequency conversion system

NASA Technical Reports Server (NTRS)

Sanders, Steven (Inventor); Waarts, Robert G. (Inventor)

2001-01-01

A frequency conversion system comprises first and second gain sources providing first and second frequency radiation outputs where the second gain source receives as input the output of the first gain source and, further, the second gain source comprises a Raman or Brillouin gain fiber for wave shifting a portion of the radiation of the first frequency output into second frequency radiation output to provided a combined output of first and second frequencies. Powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.

High power broadband millimeter wave TWTs

NASA Astrophysics Data System (ADS)

James, Bill G.

1999-05-01

In the early 1980's the requirement for high power broadband millimeter wave sources encouraged the development of microwave vacuum device amplifiers for radar and communication systems. Many government funded programs were implemented for the development of high power broadband millimeter wave amplifiers that would meet the needs of the high power community. The tube design capable of meeting these goals was the slow wave coupled cavity traveling wave device, which had a proven technology base at the lower frequencies (X Band). However scaling this technology to the millimeter frequencies had severe shortcomings in both thermal and manufacturing design. These shortcomings were overcome with the development of the Ladder Circuit technology. In conjunction with the circuit development high power electron beam systems had to be developed for the generation of high rf powers. These beam systems had to be capable of many megawatts of beam power density and high current densities. The cathode technology required to be capable of operating at current densities of 10 amperes per square centimeter at long pulse lengths and high duty cycle. Since the introduction of the Ladder Circuit technology a number of high power broadband millimeter wave amplifiers have been developed using this technology, and have been deployed in operating radar and communication systems. Broadband millimeter wave sources have been manufactured in the frequency range from 27 GHz to 100 GHz with power levels ranging from 100 watts to 50 kilowatts. Today the power levels achieved by these devices are nearing the limits of this technology; therefore to gain a significant increase in power at the millimeter wave frequencies other technologies will have to be considered particularly fast wave devices. This paper will briefly review the ladder circuit technology and present the designs of a number of broadband high power devices developed at Ka and W band. The discussion will include the beam systems employed in these devices which are the highest power density linear beams generated to date. In conclusion the limits of the power generating capability of this technology will be presented.

Microwave dielectric properties of BNT-BT0.08 thin films prepared by sol-gel technique

NASA Astrophysics Data System (ADS)

Huitema, L.; Cernea, M.; Crunteanu, A.; Trupina, L.; Nedelcu, L.; Banciu, M. G.; Ghalem, A.; Rammal, M.; Madrangeas, V.; Passerieux, D.; Dutheil, P.; Dumas-Bouchiat, F.; Marchet, P.; Champeaux, C.

2016-04-01

We report for the first time the microwave characterization of 0.92(Bi0.5Na0.5)TiO3-0.08BaTiO3 (BNT-BT0.08) ferroelectric thin films fabricated by the sol-gel method and integrated in both planar and out-of-plane tunable capacitors for agile high-frequency applications and particularly on the WiFi frequency band from 2.4 GHz to 2.49 GHz. The permittivity and loss tangent of the realized BNT-BT0.08 layers have been first measured by a resonant cavity method working at 12.5 GHz. Then, we integrated the ferroelectric material in planar inter-digitated capacitors (IDC) and in out-of-plane metal-insulator-metal (MIM) devices and investigated their specific properties (dielectric tunability and losses) on the whole 100 MHz-15 GHz frequency domain. The 3D finite-elements electromagnetic simulations of the IDC capacitances are fitting very well with their measured responses and confirm the dielectric properties determined with the cavity method. While IDCs are not exhibiting an optimal tunability, the MIM capacitor devices with optimized Ir/MgO(100) bottom electrodes demonstrate a high dielectric tunability, of 30% at 2.45 GHz under applied voltages as low as 10 V, and it is reaching 50% under 20 V voltage bias at the same frequency. These high-frequency properties of the MIM devices integrating the BNT-BT0.08 films, combining a high tunability under low applied voltages indicate a wide integration potential for tunable devices in the microwave domain and particularly at 2.45 GHz, corresponding to the widely used industrial, scientific, and medical frequency band.

Device characteristics of antenna-coupled metal-insulator-metal diodes (rectenna) using Al2O3, TiO2, and Cr2O3 as insulator layer for energy harvesting applications

NASA Astrophysics Data System (ADS)

Inac, Mesut; Shafique, Atia; Ozcan, Meric; Gurbuz, Yasar

2015-09-01

Antenna-coupled metal-insulator-metal devices are most potent candidate for future energy harvesting devices. The reason for that they are ultra-high speed devices that can rectify the electromagnetic radiation at high frequencies. In addition to their speed, they are also small devices that can have more number of devices in unit area. In this work, it is aimed design and develop a device which can harvest and detect IR radiation.

High voltage-high power components for large space power distribution systems

NASA Technical Reports Server (NTRS)

Renz, D. D.

1984-01-01

Space power components including a family of bipolar power switching transistors, fast switching power diodes, heat pipe cooled high frequency transformers and inductors, high frequency conduction cooled transformers, high power-high frequency capacitors, remote power controllers and rotary power transfer devices were developed. Many of these components such as the power switching transistors, power diodes and the high frequency capacitor are commercially available. All the other components were developed to the prototype level. The dc/dc series resonant converters were built to the 25 kW level.

High-power waveguide resonator second harmonic device with external conversion efficiency up to 75%

NASA Astrophysics Data System (ADS)

Stefszky, M.; Ricken, R.; Eigner, C.; Quiring, V.; Herrmann, H.; Silberhorn, C.

2018-06-01

We report on a highly efficient waveguide resonator device for the production of 775 nm light using a titanium indiffused LiNbO3 waveguide resonator. When scanning the resonance, the device produces up to 110 mW of second harmonic power with 140 mW incident on the device—an external conversion efficiency of 75%. The cavity length is also locked, using a Pound–Drever–Hall type locking scheme, involving feedback to either the cavity temperature or the laser frequency. With laser frequency feedback, a stable output power of approximately 28 mW from a 52 mW pump is seen over one hour.

Multi-harmonic quantum dot optomechanics in fused LiNbO3-(Al)GaAs hybrids

NASA Astrophysics Data System (ADS)

Nysten, Emeline D. S.; Huo, Yong Heng; Yu, Hailong; Song, Guo Feng; Rastelli, Armando; Krenner, Hubert J.

2017-11-01

We fabricated an acousto-optic semiconductor hybrid device for strong optomechanical coupling of individual quantum emitters and a surface acoustic wave. Our device comprises of a surface acoustic wave chip made from highly piezoelectric LiNbO3 and a GaAs-based semiconductor membrane with an embedded layer of quantum dots. Employing multi-harmonic transducers, we generated sound waves on LiNbO3 over a wide range of radio frequencies. We monitored their coupling to and propagation across the semiconductor membrane, both in the electrical and optical domain. We demonstrate the enhanced optomechanical tuning of the embedded quantum dots with increasing frequencies. This effect was verified by finite element modelling of our device geometry and attributed to an increased localization of the acoustic field within the semiconductor membrane. For moderately high acoustic frequencies, our simulations predict strong optomechanical coupling, making our hybrid device ideally suited for applications in semiconductor based quantum acoustics.

Fabrication and characterization of active nanostructures

NASA Astrophysics Data System (ADS)

Opondo, Noah F.

Three different nanostructure active devices have been designed, fabricated and characterized. Junctionless transistors based on highly-doped silicon nanowires fabricated using a bottom-up fabrication approach are first discussed. The fabrication avoids the ion implantation step since silicon nanowires are doped in-situ during growth. Germanium junctionless transistors fabricated with a top down approach starting from a germanium on insulator substrate and using a gate stack of high-k dielectrics and GeO2 are also presented. The levels and origin of low-frequency noise in junctionless transistor devices fabricated from silicon nanowires and also from GeOI devices are reported. Low-frequency noise is an indicator of the quality of the material, hence its characterization can reveal the quality and perhaps reliability of fabricated transistors. A novel method based on low-frequency noise measurement to envisage trap density in the semiconductor bandgap near the semiconductor/oxide interface of nanoscale silicon junctionless transistors (JLTs) is presented. Low-frequency noise characterization of JLTs biased in saturation is conducted at different gate biases. The noise spectrum indicates either a Lorentzian or 1/f. A simple analysis of the low-frequency noise data leads to the density of traps and their energy within the semiconductor bandgap. The level of noise in silicon JLT devices is lower than reported values on transistors fabricated using a top-down approach. This noise level can be significantly improved by improving the quality of dielectric and the channel interface. A micro-vacuum electron device based on silicon field emitters for cold cathode emission is also presented. The presented work utilizes vertical Si nanowires fabricated by means of self-assembly, standard lithography and etching techniques as field emitters in this dissertation. To obtain a high nanowire density, hence a high current density, a simple and inexpensive Langmuir Blodgett technique to deposit silica nanoparticles as a mask to etch Si is adopted. Fabrication and characterization of a metal-gated microtriode with a high current density and low operating voltage are presented.

On the history of plasma treatment and comparison of microbiostatic efficacy of a historical high-frequency plasma device with two modern devices

PubMed Central

Napp, Judith; Daeschlein, Georg; Napp, Matthias; von Podewils, Sebastian; Gümbel, Denis; Spitzmueller, Romy; Fornaciari, Paolo; Hinz, Peter; Jünger, Michael

2015-01-01

Background: Cold atmospheric pressure plasma (CAP) with its many bioactive properties has defined a new medical field: the plasma medicine. However, in the related form of high-frequency therapy, CAP was even used briefly a century ago. The aim of this study was to review historic CAP treatments and to obtain data regarding the antimicrobial efficacy of a historical high-frequency plasma device. Methods: First, historic literature regarding the history of CAP treatment was evaluated, because in the modern literature no data were available. Second, the susceptibility of 5 different bacterial wound isolates, cultured on agar, to a historic plasma source (violet wand [VW]) and two modern devices (atmospheric pressure plasma jet [APPJ] and Dielectric Barrier Discharge [DBD]) was analyzed . The obtained inhibition areas (IA) were compared. Results: First, the most convenient popular historical electromedical treatments produced a so-called effluvia by using glass electrodes, related to today’s CAP. Second, all three tested plasma sources showed complete eradication of all tested microbial strains in the treated area. The “historical” cold VW plasma showed antimicrobial effects similar to those of modern APPJ and DBD regarding the diameter of the IA. Conclusion: Some retrograde evidence may be deducted from this, especially for treatment of infectious diseases with historical plasma devices. The underlying technology may serve as model for construction of modern sucessive devices. PMID:26124985

Adhoc electromagnetic compatibility testing of non-implantable medical devices and radio frequency identification

PubMed Central

2013-01-01

Background The use of radiofrequency identification (RFID) in healthcare is increasing and concerns for electromagnetic compatibility (EMC) pose one of the biggest obstacles for widespread adoption. Numerous studies have documented that RFID can interfere with medical devices. The majority of past studies have concentrated on implantable medical devices such as implantable pacemakers and implantable cardioverter defibrillators (ICDs). This study examined EMC between RFID systems and non-implantable medical devices. Methods Medical devices were exposed to 19 different RFID readers and one RFID active tag. The RFID systems used covered 5 different frequency bands: 125–134 kHz (low frequency (LF)); 13.56 MHz (high frequency (HF)); 433 MHz; 915 MHz (ultra high frequency (UHF])) and 2.4 GHz. We tested three syringe pumps, three infusion pumps, four automatic external defibrillators (AEDs), and one ventilator. The testing procedure is modified from American National Standards Institute (ANSI) C63.18, Recommended Practice for an On-Site, Ad Hoc Test Method for Estimating Radiated Electromagnetic Immunity of Medical Devices to Specific Radio-Frequency Transmitters. Results For syringe pumps, we observed electromagnetic interference (EMI) during 13 of 60 experiments (22%) at a maximum distance of 59 cm. For infusion pumps, we observed EMI during 10 of 60 experiments (17%) at a maximum distance of 136 cm. For AEDs, we observed EMI during 18 of 75 experiments (24%) at a maximum distance of 51 cm. The majority of the EMI observed was classified as probably clinically significant or left the device inoperable. No EMI was observed for all medical devices tested during exposure to 433 MHz (two readers, one active tag) or 2.4 GHz RFID (two readers). Conclusion Testing confirms that RFID has the ability to interfere with critical medical equipment. Hospital staff should be aware of the potential for medical device EMI caused by RFID systems and should be encouraged to perform on-site RF immunity tests prior to RFID system deployment or prior to placing new medical devices in an RFID environment. The methods presented in this paper are time-consuming and burdensome and suggest the need for standard test methods for assessing the immunity of medical devices to RFID systems. PMID:23845013

Adhoc electromagnetic compatibility testing of non-implantable medical devices and radio frequency identification.

PubMed

Seidman, Seth J; Guag, Joshua W

2013-07-11

The use of radiofrequency identification (RFID) in healthcare is increasing and concerns for electromagnetic compatibility (EMC) pose one of the biggest obstacles for widespread adoption. Numerous studies have documented that RFID can interfere with medical devices. The majority of past studies have concentrated on implantable medical devices such as implantable pacemakers and implantable cardioverter defibrillators (ICDs). This study examined EMC between RFID systems and non-implantable medical devices. Medical devices were exposed to 19 different RFID readers and one RFID active tag. The RFID systems used covered 5 different frequency bands: 125-134 kHz (low frequency (LF)); 13.56 MHz (high frequency (HF)); 433 MHz; 915 MHz (ultra high frequency (UHF])) and 2.4 GHz. We tested three syringe pumps, three infusion pumps, four automatic external defibrillators (AEDs), and one ventilator. The testing procedure is modified from American National Standards Institute (ANSI) C63.18, Recommended Practice for an On-Site, Ad Hoc Test Method for Estimating Radiated Electromagnetic Immunity of Medical Devices to Specific Radio-Frequency Transmitters. For syringe pumps, we observed electromagnetic interference (EMI) during 13 of 60 experiments (22%) at a maximum distance of 59 cm. For infusion pumps, we observed EMI during 10 of 60 experiments (17%) at a maximum distance of 136 cm. For AEDs, we observed EMI during 18 of 75 experiments (24%) at a maximum distance of 51 cm. The majority of the EMI observed was classified as probably clinically significant or left the device inoperable. No EMI was observed for all medical devices tested during exposure to 433 MHz (two readers, one active tag) or 2.4 GHz RFID (two readers). Testing confirms that RFID has the ability to interfere with critical medical equipment. Hospital staff should be aware of the potential for medical device EMI caused by RFID systems and should be encouraged to perform on-site RF immunity tests prior to RFID system deployment or prior to placing new medical devices in an RFID environment. The methods presented in this paper are time-consuming and burdensome and suggest the need for standard test methods for assessing the immunity of medical devices to RFID systems.

Development of high frequency low weight power magnetics for aerospace power systems

NASA Technical Reports Server (NTRS)

Schwarze, G. E.

1984-01-01

A dominant design consideration in the development of space type power mangetic devices is the application of reliable thermal control methods to prevent device failure which is due to excessive temperature rises and hot temperatures in critical areas. The resultant design must also yield low weight, high efficiency, high reliability and maintainability, and long life. The weight savings and high efficiency that results by going to high frequency and unique thermal control techniques is demonstrated by the development of a 25 kVA, 20 kHz space type transformer under the power magnetics technology program. Work in the area of power rotary transformer is also discussed.

High-sensitivity acoustic sensors from nanofibre webs.

PubMed

Lang, Chenhong; Fang, Jian; Shao, Hao; Ding, Xin; Lin, Tong

2016-03-23

Considerable interest has been devoted to converting mechanical energy into electricity using polymer nanofibres. In particular, piezoelectric nanofibres produced by electrospinning have shown remarkable mechanical energy-to-electricity conversion ability. However, there is little data for the acoustic-to-electric conversion of electrospun nanofibres. Here we show that electrospun piezoelectric nanofibre webs have a strong acoustic-to-electric conversion ability. Using poly(vinylidene fluoride) as a model polymer and a sensor device that transfers sound directly to the nanofibre layer, we show that the sensor devices can detect low-frequency sound with a sensitivity as high as 266 mV Pa(-1). They can precisely distinguish sound waves in low to middle frequency region. These features make them especially suitable for noise detection. Our nanofibre device has more than five times higher sensitivity than a commercial piezoelectric poly(vinylidene fluoride) film device. Electrospun piezoelectric nanofibres may be useful for developing high-performance acoustic sensors.

High-sensitivity acoustic sensors from nanofibre webs

PubMed Central

Lang, Chenhong; Fang, Jian; Shao, Hao; Ding, Xin; Lin, Tong

2016-01-01

Considerable interest has been devoted to converting mechanical energy into electricity using polymer nanofibres. In particular, piezoelectric nanofibres produced by electrospinning have shown remarkable mechanical energy-to-electricity conversion ability. However, there is little data for the acoustic-to-electric conversion of electrospun nanofibres. Here we show that electrospun piezoelectric nanofibre webs have a strong acoustic-to-electric conversion ability. Using poly(vinylidene fluoride) as a model polymer and a sensor device that transfers sound directly to the nanofibre layer, we show that the sensor devices can detect low-frequency sound with a sensitivity as high as 266 mV Pa−1. They can precisely distinguish sound waves in low to middle frequency region. These features make them especially suitable for noise detection. Our nanofibre device has more than five times higher sensitivity than a commercial piezoelectric poly(vinylidene fluoride) film device. Electrospun piezoelectric nanofibres may be useful for developing high-performance acoustic sensors. PMID:27005010

Carbon nanotube transistor based high-frequency electronics

NASA Astrophysics Data System (ADS)

Schroter, Michael

At the nanoscale carbon nanotubes (CNTs) have higher carrier mobility and carrier velocity than most incumbent semiconductors. Thus CNT based field-effect transistors (FETs) are being considered as strong candidates for replacing existing MOSFETs in digital applications. In addition, the predicted high intrinsic transit frequency and the more recent finding of ways to achieve highly linear transfer characteristics have inspired investigations on analog high-frequency (HF) applications. High linearity is extremely valuable for an energy efficient usage of the frequency spectrum, particularly in mobile communications. Compared to digital applications, the much more relaxed constraints for CNT placement and lithography combined with already achieved operating frequencies of at least 10 GHz for fabricated devices make an early entry in the low GHz HF market more feasible than in large-scale digital circuits. Such a market entry would be extremely beneficial for funding the development of production CNTFET based process technology. This talk will provide an overview on the present status and feasibility of HF CNTFET technology will be given from an engineering point of view, including device modeling, experimental results, and existing roadblocks.

Nerve-muscle activation by rotating permanent magnet configurations.

PubMed

Watterson, Peter A; Nicholson, Graham M

2016-04-01

The standard method of magnetic nerve activation using pulses of high current in coils has drawbacks of high cost, high electrical power (of order 1 kW), and limited repetition rate without liquid cooling. Here we report a new technique for nerve activation using high speed rotation of permanent magnet configurations, generating a sustained sinusoidal electric field using very low power (of order 10 W). A high ratio of the electric field gradient divided by frequency is shown to be the key indicator for nerve activation at high frequencies. Activation of the cane toad sciatic nerve and attached gastrocnemius muscle was observed at frequencies as low as 180 Hz for activation of the muscle directly and 230 Hz for curved nerves, but probably not in straight sections of nerve. These results, employing the first prototype device, suggest the opportunity for a new class of small low-cost magnetic nerve and/or muscle stimulators. Conventional pulsed current systems for magnetic neurostimulation are large and expensive and have limited repetition rate because of overheating. Here we report a new technique for nerve activation, namely high-speed rotation of a configuration of permanent magnets. Analytical solutions of the cable equation are derived for the oscillating electric field generated, which has amplitude proportional to the rotation speed. The prototype device built comprised a configuration of two cylindrical magnets with antiparallel magnetisations, made to rotate by interaction between the magnets' own magnetic field and three-phase currents in coils mounted on one side of the device. The electric field in a rectangular bath placed on top of the device was both numerically evaluated and measured. The ratio of the electric field gradient on frequency was approximately 1 V m(-2) Hz(-1) near the device. An exploratory series of physiological tests was conducted on the sciatic nerve and attached gastrocnemius muscle of the cane toad (Bufo marinus). Activation was readily observed of the muscle directly, at frequencies as low as 180 Hz, and of nerves bent around insulators, at frequencies as low as 230 Hz. Nerve-muscles, with the muscle elevated to avoid its direct activation, were occasionally activated, possibly in the straight section of the nerve, but more likely in the nerve where it curved up to the muscle, at radius of curvature 10 mm or more, or at the nerve end. These positive first results suggest the opportunity for a new class of small, low-cost devices for magnetic stimulation of nerves and/or muscles. © 2015 The Authors. The Journal of Physiology © 2015 The Physiological Society.

Design and Fabrication of Millimeter Wave Hexagonal Nano-Ferrite Circulator on Silicon CMOS Substrate

NASA Astrophysics Data System (ADS)

Oukacha, Hassan

The rapid advancement of Complementary Metal Oxide Semiconductor (CMOS) technology has formed the backbone of the modern computing revolution enabling the development of computationally intensive electronic devices that are smaller, faster, less expensive, and consume less power. This well-established technology has transformed the mobile computing and communications industries by providing high levels of system integration on a single substrate, high reliability and low manufacturing cost. The driving force behind this computing revolution is the scaling of semiconductor devices to smaller geometries which has resulted in faster switching speeds and the promise of replacing traditional, bulky radio frequency (RF) components with miniaturized devices. Such devices play an important role in our society enabling ubiquitous computing and on-demand data access. This thesis presents the design and development of a magnetic circulator component in a standard 180 nm CMOS process. The design approach involves integration of nanoscale ferrite materials on a CMOS chip to avoid using bulky magnetic materials employed in conventional circulators. This device constitutes the next generation broadband millimeter-wave circulator integrated in CMOS using ferrite materials operating in the 60GHz frequency band. The unlicensed ultra-high frequency spectrum around 60GHz offers many benefits: very high immunity to interference, high security, and frequency re-use. Results of both simulations and measurements are presented in this thesis. The presented results show the benefits of this technique and the potential that it has in incorporating a complete system-on-chip (SoC) that includes low noise amplifier, power amplier, and antenna. This system-on-chip can be used in the same applications where the conventional circulator has been employed, including communication systems, radar systems, navigation and air traffic control, and military equipment. This set of applications of circulator shows how crucial this device is to many industries and the need for smaller, cost effective RF components.

Investigation of structural and electrical properties on substrate material for high frequency metal-oxide-semiconductor (MOS) devices

NASA Astrophysics Data System (ADS)

Kumar, M.; Yang, Sung-Hyun; Janardhan Reddy, K.; JagadeeshChandra, S. V.

2017-04-01

Hafnium oxide (HfO2) thin films were grown on cleaned P-type <1 0 0> Ge and Si substrates by using atomic layer deposition technique (ALD) with thickness of 8 nm. The composition analysis of as-deposited and annealed HfO2 films was characterized by XPS, further electrical measurements; we fabricated the metal-oxide-semiconductor (MOS) devices with Pt electrode. Post deposition annealing in O2 ambient at 500 °C for 30 min was carried out on both Ge and Si devices. Capacitance-voltage (C-V) and conductance-voltage (G-V) curves measured at 1 MHz. The Ge MOS devices showed improved interfacial and electrical properties, high dielectric constant (~19), smaller EOT value (0.7 nm), and smaller D it value as Si MOS devices. The C-V curves shown significantly high accumulation capacitance values from Ge devices, relatively when compare with the Si MOS devices before and after annealing. It could be due to the presence of very thin interfacial layer at HfO2/Ge stacks than HfO2/Si stacks conformed by the HRTEM images. Besides, from current-voltage (I-V) curves of the Ge devices exhibited similar leakage current as Si devices. Therefore, Ge might be a reliable substrate material for structural, electrical and high frequency applications.

Susceptibility study of audio recording devices to electromagnetic stimulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Halligan, Matthew S.; Grant, Steven L.; Beetner, Daryl G.

2014-02-01

Little research has been performed to study how intentional electromagnetic signals may couple into recording devices. An electromagnetic susceptibility study was performed on an analog tape recorder, a digital video camera, a wired computer microphone, and a wireless microphone system to electromagnetic interference. Devices were subjected to electromagnetic stimulations in the frequency range of 1-990 MHz and field strengths up to 4.9 V/m. Carrier and message frequencies of the stimulation signals were swept, and the impacts of device orientation and antenna polarization were explored. Message signals coupled into all devices only when amplitude modulated signals were used as stimulation signals.more » Test conditions that produced maximum sensitivity were highly specific to each device. Only narrow carrier frequency ranges could be used for most devices to couple messages into recordings. A basic detection technique using cross-correlation demonstrated the need for messages to be as long as possible to maximize message detection and minimize detection error. Analysis suggests that detectable signals could be coupled to these recording devices under realistic ambient conditions.« less

Thin-film piezoelectric-on-silicon resonators for high-frequency reference oscillator applications.

PubMed

Abdolvand, Reza; Lavasani, Hossein M; Ho, Gavin K; Ayazi, Farrokh

2008-12-01

This paper studies the application of lateral bulk acoustic thin-film piezoelectric-on-substrate (TPoS) resonators in high-frequency reference oscillators. Low-motional-impedance TPoS resonators are designed and fabricated in 2 classes--high-order and coupled-array. Devices of each class are used to assemble reference oscillators and the performance characteristics of the oscillators are measured and discussed. Since the motional impedance of these devices is small, the transimpedance amplifier (TIA) in the oscillator loop can be reduced to a single transistor and 3 resistors, a format that is very power-efficient. The lowest reported power consumption is approximately 350 microW for an oscillator operating at approximately 106 MHz. A passive temperature compensation method is also utilized by including the buried oxide layer of the silicon-on-insulator (SOI) substrate in the structural resonant body of the device, and a very small (-2.4 ppm/ degrees C) temperature coefficient of frequency is obtained for an 82-MHz oscillator.

Review of GaN-based devices for terahertz operation

NASA Astrophysics Data System (ADS)

Ahi, Kiarash

2017-09-01

GaN provides the highest electron saturation velocity, breakdown voltage, operation temperature, and thus the highest combined frequency-power performance among commonly used semiconductors. The industrial need for compact, economical, high-resolution, and high-power terahertz (THz) imaging and spectroscopy systems are promoting the utilization of GaN for implementing the next generation of THz systems. As it is reviewed, the mentioned characteristics of GaN together with its capabilities of providing high two-dimensional election densities and large longitudinal optical phonon of ˜90 meV make it one of the most promising semiconductor materials for the future of the THz emitters, detectors, mixers, and frequency multiplicators. GaN-based devices have shown capabilities of operation in the upper THz frequency band of 5 to 12 THz with relatively high photon densities in room temperature. As a result, THz imaging and spectroscopy systems with high resolution and deep depth of penetration can be realized through utilizing GaN-based devices. A comprehensive review of the history and the state of the art of GaN-based electronic devices, including plasma heterostructure field-effect transistors, negative differential resistances, hetero-dimensional Schottky diodes, impact avalanche transit times, quantum-cascade lasers, high electron mobility transistors, Gunn diodes, and tera field-effect transistors together with their impact on the future of THz imaging and spectroscopy systems is provided.

Photonic Generation of High Power, Ultrastable Microwave Signals by Vernier Effect in a Femtosecond Laser Frequency Comb.

PubMed

Saleh, Khaldoun; Millo, Jacques; Marechal, Baptiste; Dubois, Benoît; Bakir, Ahmed; Didier, Alexandre; Lacroûte, Clément; Kersalé, Yann

2018-01-31

Optical frequency division of an ultrastable laser to the microwave frequency range by an optical frequency comb has allowed the generation of microwave signals with unprecedently high spectral purity and stability. However, the generated microwave signal will suffer from a very low power level if no external optical frequency comb repetition rate multiplication device is used. This paper reports theoretical and experimental studies on the beneficial use of the Vernier effect together with the spectral selective filtering in a double directional coupler add-drop optical fibre ring resonator to increase the comb repetition rate and generate high power microwaves. The studies are focused on two selective filtering aspects: the high rejection of undesirable optical modes of the frequency comb and the transmission of the desirable modes with the lowest possible loss. Moreover, the conservation of the frequency comb stability and linewidth at the resonator output is particularly considered. Accordingly, a fibre ring resonator is designed, fabricated, and characterized, and a technique to stabilize the resonator's resonance comb is proposed. A significant power gain is achieved for the photonically generated beat note at 10 GHz. Routes to highly improve the performances of such proof-of-concept device are also discussed.

The use of fault reporting of medical equipment to identify latent design flaws.

PubMed

Flewwelling, C J; Easty, A C; Vicente, K J; Cafazzo, J A

2014-10-01

Poor device design that fails to adequately account for user needs, cognition, and behavior is often responsible for use errors resulting in adverse events. This poor device design is also often latent, and could be responsible for "No Fault Found" (NFF) reporting, in which medical devices sent for repair by clinical users are found to be operating as intended. Unresolved NFF reports may contribute to incident under reporting, clinical user frustration, and biomedical engineering technologist inefficacy. This study uses human factors engineering methods to investigate the relationship between NFF reporting frequency and device usability. An analysis of medical equipment maintenance data was conducted to identify devices with a high NFF reporting frequency. Subsequently, semi-structured interviews and heuristic evaluations were performed in order to identify potential usability issues. Finally, usability testing was conducted in order to validate that latent usability related design faults result in a higher frequency of NFF reporting. The analysis of medical equipment maintenance data identified six devices with a high NFF reporting frequency. Semi-structured interviews, heuristic evaluations and usability testing revealed that usability issues caused a significant portion of the NFF reports. Other factors suspected to contribute to increased NFF reporting include accessory issues, intermittent faults and environmental issues. Usability testing conducted on three of the devices revealed 23 latent usability related design faults. These findings demonstrate that latent usability related design faults manifest themselves as an increase in NFF reporting and that devices containing usability related design faults can be identified through an analysis of medical equipment maintenance data. Copyright © 2014 The Authors. Published by Elsevier Inc. All rights reserved.

Development of a Pulsed Combustion Actuator For High-Speed Flow Control

NASA Technical Reports Server (NTRS)

Cutler, Andrew D.; Beck, B. Terry; Wilkes, Jennifer A.; Drummond, J. Philip; Alderfer, David W.; Danehy, Paul M.

2005-01-01

This paper describes the flow within a prototype actuator, energized by pulsed combustion or detonations, that provides a pulsed jet suitable for flow control in high-speed applications. A high-speed valve, capable of delivering a pulsed stream of reactants a mixture of H2 and air at rates of up to 1500 pulses per second, has been constructed. The reactants burn in a resonant chamber, and the products exit the device as a pulsed jet. High frequency pressure transducers have been used to monitor the pressure fluctuations in the device at various reactant injection frequencies, including both resonant and off-resonant conditions. The combustion chamber has been constructed with windows, and the flow inside it has been visualized using Planar Laser-Induced Fluorescence (PLIF). The pulsed jet at the exit of the device has been observed using schlieren.

Flux-tunable heat sink for quantum electric circuits.

PubMed

Partanen, M; Tan, K Y; Masuda, S; Govenius, J; Lake, R E; Jenei, M; Grönberg, L; Hassel, J; Simbierowicz, S; Vesterinen, V; Tuorila, J; Ala-Nissila, T; Möttönen, M

2018-04-20

Superconducting microwave circuits show great potential for practical quantum technological applications such as quantum information processing. However, fast and on-demand initialization of the quantum degrees of freedom in these devices remains a challenge. Here, we experimentally implement a tunable heat sink that is potentially suitable for the initialization of superconducting qubits. Our device consists of two coupled resonators. The first resonator has a high quality factor and a fixed frequency whereas the second resonator is designed to have a low quality factor and a tunable resonance frequency. We engineer the low quality factor using an on-chip resistor and the frequency tunability using a superconducting quantum interference device. When the two resonators are in resonance, the photons in the high-quality resonator can be efficiently dissipated. We show that the corresponding loaded quality factor can be tuned from above 10 5 down to a few thousand at 10 GHz in good quantitative agreement with our theoretical model.

Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bansal, Kanika; Datta, Shouvik; Henini, Mohamed

2014-09-22

We observed qualitatively dissimilar frequency dependence of negative capacitance under high charge injection in two sets of functionally different junction diodes: III-V based light emitting and Si-based non-light emitting diodes. Using an advanced approach based on bias activated differential capacitance, we developed a generalized understanding of negative capacitance phenomenon which can be extended to any diode based device structure. We explained the observations as the mutual competition of fast and slow electronic transition rates which are different in different devices. This study can be useful in understanding the interfacial effects in semiconductor heterostructures and may lead to superior device functionality.

Nanoelectromechanical systems: Nanodevice motion at microwave frequencies

NASA Astrophysics Data System (ADS)

Henry Huang, Xue Ming; Zorman, Christian A.; Mehregany, Mehran; Roukes, Michael L.

2003-01-01

It has been almost forgotten that the first computers envisaged by Charles Babbage in the early 1800s were mechanical and not electronic, but the development of high-frequency nanoelectromechanical systems is now promising a range of new applications, including sensitive mechanical charge detectors and mechanical devices for high-frequency signal processing, biological imaging and quantum measurement. Here we describe the construction of nanodevices that will operate with fundamental frequencies in the previously inaccessible microwave range (greater than 1 gigahertz). This achievement represents a significant advance in the quest for extremely high-frequency nanoelectromechanical systems.

Dual-lasing channel quantum cascade laser based on scattering-assisted injection design.

PubMed

Wen, Boyu; Xu, Chao; Wang, Siyi; Wang, Kaixi; Tam, Man Chun; Wasilewski, Zbig; Ban, Dayan

2018-04-02

A dual lasing channel Terahertz Quantum Cascade laser (THz QCL) based on GaAs/Al 0.17 Ga 0.83 As material system is demonstrated. The device shows the lowest reported threshold current density (550A/cm 2 at 50K) of GaAs/Al x Ga 1-x As material system based scattering-assisted (SA) structures and operates up to a maximum lasing temperature of 144K. Dual lasing channel operation is investigated theoretically and experimentally. The combination of low frequency emission, dual lasing channel operation, low lasing threshold current density and high temperature performance make such devices ideal candidates for low frequency applications, and initiates the design strategy for achieving high-temperature performance terahertz quantum cascade laser with wide frequency coverage at low frequency.

Spike train generation and current-to-frequency conversion in silicon diodes

NASA Technical Reports Server (NTRS)

Coon, D. D.; Perera, A. G. U.

1989-01-01

A device physics model is developed to analyze spontaneous neuron-like spike train generation in current driven silicon p(+)-n-n(+) devices in cryogenic environments. The model is shown to explain the very high dynamic range (0 to the 7th) current-to-frequency conversion and experimental features of the spike train frequency as a function of input current. The devices are interesting components for implementation of parallel asynchronous processing adjacent to cryogenically cooled focal planes because of their extremely low current and power requirements, their electronic simplicity, and their pulse coding capability, and could be used to form the hardware basis for neural networks which employ biologically plausible means of information coding.

Excess noise in Pb(1-x)Sn(x)Se semiconductor lasers

NASA Technical Reports Server (NTRS)

Harward, C. N.; Sidney, B. D.

1980-01-01

The noise characteristics of the TDL were studied for frequencies less than 20 kHz. For heterodyne applications, the high frequency ( 1 MHz) characteristics are also important. Therefore, the high frequency noise characteristics of the TDL were studied as a part of a full TDL characterization program which has been implemented for the improvement of the TDL as a local oscillator in the LHS system. It was observed that all the devices showed similar high frequency noise characteristics even though they were all constructed using different techniques. These common high frequency noise characteristics are reported.

Nerve–muscle activation by rotating permanent magnet configurations

PubMed Central

Nicholson, Graham M.

2016-01-01

Key points The standard method of magnetic nerve activation using pulses of high current in coils has drawbacks of high cost, high electrical power (of order 1 kW), and limited repetition rate without liquid cooling.Here we report a new technique for nerve activation using high speed rotation of permanent magnet configurations, generating a sustained sinusoidal electric field using very low power (of order 10 W).A high ratio of the electric field gradient divided by frequency is shown to be the key indicator for nerve activation at high frequencies.Activation of the cane toad sciatic nerve and attached gastrocnemius muscle was observed at frequencies as low as 180 Hz for activation of the muscle directly and 230 Hz for curved nerves, but probably not in straight sections of nerve.These results, employing the first prototype device, suggest the opportunity for a new class of small low‐cost magnetic nerve and/or muscle stimulators. Abstract Conventional pulsed current systems for magnetic neurostimulation are large and expensive and have limited repetition rate because of overheating. Here we report a new technique for nerve activation, namely high‐speed rotation of a configuration of permanent magnets. Analytical solutions of the cable equation are derived for the oscillating electric field generated, which has amplitude proportional to the rotation speed. The prototype device built comprised a configuration of two cylindrical magnets with antiparallel magnetisations, made to rotate by interaction between the magnets’ own magnetic field and three‐phase currents in coils mounted on one side of the device. The electric field in a rectangular bath placed on top of the device was both numerically evaluated and measured. The ratio of the electric field gradient on frequency was approximately 1 V m−2 Hz−1 near the device. An exploratory series of physiological tests was conducted on the sciatic nerve and attached gastrocnemius muscle of the cane toad (Bufo marinus). Activation was readily observed of the muscle directly, at frequencies as low as 180 Hz, and of nerves bent around insulators, at frequencies as low as 230 Hz. Nerve–muscles, with the muscle elevated to avoid its direct activation, were occasionally activated, possibly in the straight section of the nerve, but more likely in the nerve where it curved up to the muscle, at radius of curvature 10 mm or more, or at the nerve end. These positive first results suggest the opportunity for a new class of small, low‐cost devices for magnetic stimulation of nerves and/or muscles. PMID:26661902

A Silicon Disk with Sandwiched Piezoelectric Springs for Ultra-low Frequency Energy Harvesting

NASA Astrophysics Data System (ADS)

Lu, J.; Zhang, L.; Yamashita, T.; Takei, R.; Makimoto, N.; Kobayashi, T.

2015-12-01

Exploiting the sporadic availability of energy by energy harvesting devices is an attractive solution to power wireless sensor nodes and many other distributed modules for much longer operation duration and much lower maintenance cost after they are deployed. MEMS energy harvesting devices exhibit unique advantageous of super-compact size, mass productivity, and easy-integration with sensors, actuators and other integrated circuits. However, MEMS vibration energy harvesting devices are rather difficult to be used practically due to their poor response to most of the ambient vibrations at ultra-low frequency range. In this paper, a micromachined silicon disk with sandwiched piezoelectric springs was successfully developed with resonant frequency of 15.36∼42.42 Hz and quality factor of 39∼55 for energy harvesting. Footprint size of the device was 6 mm × 6 mm, which is less than half of the piezoelectric cantilevers, while the device can scavenge reasonably high power of 0.57 μW at the acceleration of 0.1 g. The evaluation results also suggested that the device was quite sensitive as a sensor for selective monitoring of vibrations at a certain frequency.

Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices

PubMed Central

Farhadi, Rozita; Farhadi, Bita

2014-01-01

Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Faraday shield. The Faraday shield was implanted in order to replace the gate-field parasitic capacitor on the entry part of the device. Also, implanting the UIS was used in order to decrease the effect of parasitic bipolar junction transistor (BJT) of the VDMOS power transistor. The research tool used in this study was Silvaco software. By decreasing the transistor entry resistance in the optimized VDMOS structure, power losses and noise at the entry of the transistor were decreased, and, by increasing the breakdown voltage, the lifetime of the VDMOS transistor lifetime was increased, which resulted in increasing drain flow and decreasing Ron. This consequently resulted in enhancing the operation of high-frequency medical devices that use transistors, such as Radio Frequency (RF) and electrocardiograph machines. PMID:25763152

Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices.

PubMed

Farhadi, Rozita; Farhadi, Bita

2014-01-01

Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Faraday shield. The Faraday shield was implanted in order to replace the gate-field parasitic capacitor on the entry part of the device. Also, implanting the UIS was used in order to decrease the effect of parasitic bipolar junction transistor (BJT) of the VDMOS power transistor. The research tool used in this study was Silvaco software. By decreasing the transistor entry resistance in the optimized VDMOS structure, power losses and noise at the entry of the transistor were decreased, and, by increasing the breakdown voltage, the lifetime of the VDMOS transistor lifetime was increased, which resulted in increasing drain flow and decreasing Ron. This consequently resulted in enhancing the operation of high-frequency medical devices that use transistors, such as Radio Frequency (RF) and electrocardiograph machines.

High-speed optical coherence tomography using fiberoptic acousto-optic phase modulation

NASA Astrophysics Data System (ADS)

Xie, Tuqiang; Wang, Zhenguo; Pan, Yingtian

2003-12-01

We report a new rapid-scanning optical delay device suitable for high-speed optical coherence tomography (OCT) in which an acousto-optic modulator (AOM) is used to independently modulate the Doppler frequency shift of the reference light beam for optical heterodyne detection. Experimental results show that the fluctuation of the measured Doppler frequency shift is less than +/-0.2% over 95% duty cycle of OCT imaging, thus allowing for enhanced signal-to-noise ratio of optical heterodyne detection. The increased Doppler frequency shift by AOM also permits complete envelop demodulation without the compromise of reducing axial resolution; if used with a resonant rapid-scanning optical delay, it will permit high-performance real-time OCT imaging. Potentially, this new rapid-scanning optical delay device will improve the performance of high-speed Doppler OCT techniques.

Experimental evaluation of a miniature MR device for a wide range of human perceivable haptic sensations

NASA Astrophysics Data System (ADS)

Yang, Tae-Heon; Koo, Jeong-Hoi

2017-12-01

Humans can experience a realistic and vivid haptic sensations by the sense of touch. In order to have a fully immersive haptic experience, both kinaesthetic and vibrotactile information must be presented to human users. Currently, little haptic research has been performed on small haptic actuators that can covey both vibrotactile feedback based on the frequency of vibrations up to the human-perceivable limit and multiple levels of kinaesthetic feedback rapidly. Therefore, this study intends to design a miniature haptic device based on MR fluid and experimentally evaluate its ability to convey vibrotactile feedback up to 300 Hz along with kinaesthetic feedback. After constructing a prototype device, a series of testing was performed to evaluate its performance of the prototype using an experimental setup, consisting of a precision dynamic mechanical analyzer and an accelerometer. The kinaesthetic testing results show that the prototype device can provide the force rate up to 89% at 5 V (360 mA), which can be discretized into multiple levels of ‘just noticeable difference’ force rate, indicating that the device can convey a wide range of kinaesthetic sensations. To evaluate the high frequency vibrotactile feedback performance of the device, its acceleration responses were measured and processed using the FFT analysis. The results indicate that the device can convey high frequency vibrotactile sensations up to 300 Hz with the sufficiently large intensity of accelerations that human can feel.

Pressure and Thrust Measurements of a High-Frequency Pulsed-Detonation Actuator

NASA Technical Reports Server (NTRS)

Nguyen, Namtran C.; Cutler, Andrew D.

2008-01-01

This paper describes the development of a small-scale, high-frequency pulsed detonation actuator. The device utilized a fuel mixture of H2 and air, which was injected into the device at frequencies of up to 1200 Hz. Pulsed detonations were demonstrated in an 8-inch long combustion volume, at approx.600 Hz, for the lambda/4 mode. The primary objective of this experiment was to measure the generated thrust. A mean value of thrust was measured up to 6.0 lb, corresponding to specific impulse of 2611 s. This value is comparable to other H2-fueled pulsed detonation engines (PDEs) experiments. The injection and detonation frequency for this new experimental case was approx.600 Hz, and was much higher than typical PDEs, where frequencies are usually less than 100 Hz. The compact size of the model and high frequency of detonation yields a thrust-per-unit-volume of approximately 2.0 lb/cu in, and compares favorably with other experiments, which typically have thrust-per-unit-volume values of approximately 0.01 lb/cu in.

Submerged Object Detection and Classification System

DTIC Science & Technology

1993-04-16

example of this type of system is a conventional sonar device wherein a highly directional beam of sonic energy periodically radiates from a...scanning transducer which in turn operates as a receiver to detect echoes reflected from any object within the path of 15 propagation. Sonar devices...classification, which requires relatively high frequency signals. Sonar devices also have the shortcoming of sensing background noise generated by

Multimachine data–based prediction of high-frequency sensor signal noise for resistive wall mode control in ITER

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yueqiang; Sabbagh, S. A.; Chapman, I. T.

The high-frequency noise measured by magnetic sensors, at levels above the typical frequency of resistive wall modes, is analyzed across a range of present tokamak devices including DIII-D, JET, MAST, ASDEX Upgrade, JT-60U, and NSTX. A high-pass filter enables identification of the noise component with Gaussian-like statistics that shares certain common characteristics in all devices considered. A conservative prediction is made for ITER plasma operation of the high-frequency noise component of the sensor signals, to be used for resistive wall mode feedback stabilization, based on the multimachine database. The predicted root-mean-square n = 1 (n is the toroidal mode number)more » noise level is 10 4 to 10 5 G/s for the voltage signal, and 0.1 to 1 G for the perturbed magnetic field signal. The lower cutoff frequency of the Gaussian pickup noise scales linearly with the sampling frequency, with a scaling coefficient of about 0.1. As a result, these basic noise characteristics should be useful for the modeling-based design of the feedback control system for the resistive wall mode in ITER.« less

Multimachine data–based prediction of high-frequency sensor signal noise for resistive wall mode control in ITER

DOE PAGES

Liu, Yueqiang; Sabbagh, S. A.; Chapman, I. T.; ...

2017-03-27

The high-frequency noise measured by magnetic sensors, at levels above the typical frequency of resistive wall modes, is analyzed across a range of present tokamak devices including DIII-D, JET, MAST, ASDEX Upgrade, JT-60U, and NSTX. A high-pass filter enables identification of the noise component with Gaussian-like statistics that shares certain common characteristics in all devices considered. A conservative prediction is made for ITER plasma operation of the high-frequency noise component of the sensor signals, to be used for resistive wall mode feedback stabilization, based on the multimachine database. The predicted root-mean-square n = 1 (n is the toroidal mode number)more » noise level is 10 4 to 10 5 G/s for the voltage signal, and 0.1 to 1 G for the perturbed magnetic field signal. The lower cutoff frequency of the Gaussian pickup noise scales linearly with the sampling frequency, with a scaling coefficient of about 0.1. As a result, these basic noise characteristics should be useful for the modeling-based design of the feedback control system for the resistive wall mode in ITER.« less

From hemodynamic towards cardiomechanic sensors in implantable devices

NASA Astrophysics Data System (ADS)

Ferek-Petric, Bozidar

2013-06-01

Sensor could significantly improve the cardiac electrotherapy. It has to provide long-term stabile signal not impeding the device longevity and lead reliability. It may not introduce special implantation and adjustment procedures. Hemodynamic sensors based on the blood flow velocity and cardiomechanic sensors based on the lead bending measurement are disclosed. These sensors have a broad clinical utility. Triboelectric and high-frequency lead bending sensors yield accurate and stable signals whereby functioning with every cardiac lead. Moreover, high frequency measurement avoids use of any kind of special hardware mounted on the cardiac lead.

Improved RF Isolation Amplifier

NASA Technical Reports Server (NTRS)

Stevens, G. L.; Macconnell, J.

1985-01-01

Circuit has high reverse isolation and wide bandwidth. Wideband isolation amplifier has low intermodulation distortion and high reverse isolation. Circuit does not require selected or matched components or directional coupling device. Circuit used in applications requiring high reverse isolation such as receiver intermediate-frequency (IF) strips and frequency distribution systems. Also applicable in RF and video signaling.

Microfabricated multijunction thermal converters

NASA Astrophysics Data System (ADS)

Wunsch, Thomas Franzen

2001-12-01

In order to develop improved standards for the measurement of ac voltages and currents, a new thin-film fabrication technique for the multijunction thermal converter has been developed. The ability of a thermal converter to relate an rms ac voltage or current to a dc value is characterized by a quantity called `ac-dc difference' that is ideally zero. The best devices produced using the new techniques have ac-dc differences below 1 × 10-6 in the range of frequencies from 20 Hz to 10 kHz and below 7.5 × 10-6 in the range of frequencies from 20 kHz to 300 kHz. This is a reduction of two orders of magnitude in the lower frequency range and one order of magnitude in the higher frequency range over devices produced at the National Institute of Standards and Technology in 1996. The performance achieved is competitive with the best techniques in the world for ac measurements and additional evaluation is therefore warranted to determine the suitability of the devices for use as national standards that form the legal basis for traceable rms voltage measurements of time varying waveforms in the United States. The construction of the new devices is based on thin-film fabrication of a heated wire supported by a thermally isolated thin-film membrane. The membrane is produced utilizing a reactive ion plasma etch. A photoresist lift- off technique is used to pattern the metal thin-film layers that form the heater and the multijunction thermocouple circuit. The etching and lift-off allow the device to be produced without wet chemical etches that are time consuming and impede the investigation of structures with differing materials. These techniques result in an approach to fabrication that is simple, inexpensive, and free from the manual construction techniques used in the fabrication of conventional single and multijunction thermoelements. Thermal, thermoelectric, and electrical models have been developed to facilitate designs that reduce the low- frequency error. At high frequencies, from 300 kHz to 1 MHz, the performance of the device is degraded by a capacitive coupling effect that produces an ac-dc difference of approximately -90 × 10-6 at 1 MHz. A model is developed that explains this behavior. The model shows that an improvement in performance in the high-frequency range is possible through the use of very high or very low resistivity silicon substrates.

Terahertz magnonics: Feasibility of using terahertz magnons for information processing

NASA Astrophysics Data System (ADS)

Zakeri, Khalil

2018-06-01

An immediate need of information technology is designing fast, small and low-loss devices. One of the ways to design such devices is using the bosonic quasiparticles, such as magnons, for information transfer/processing. This is the main idea behind the field of magnonics. When a magnon propagates through a magnetic medium, no electrical charge transport is involved and therefore no energy losses, creating Joule heating, occur. This is the most important advantage of using magnons for information transfer. Moreover the mutual conversion between magnons and the other carriers e.g. electrons, photons and plasmons shall open new opportunities to realize tunable multifunctional devices. Magnons cover a very wide range of frequency, from sub-gigahertz up to a few hundreds of terahertz. The magnon frequency has an important impact on the performance of magnon-based devices (the larger the excitation frequency, the faster the magnons). This means that the use of high-frequency (terahertz) magnons would provide a great opportunity for the design of ultrafast devices. However, up to now the focus in magnonics has been on the low-frequency gigahertz magnons. Here we discuss the feasibility of using terahertz magnons for application in magnonic devices. We shall bring the concept of terahertz magnonics into discussion. We discuss how the recently discovered phenomena in the field of terahertz magnons may inspire ideas for designing new magnonic devices. We further introduce methods to tune the fundamental properties of terahertz magnons, e.g. their eigenfrequency and lifetime.

Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices

NASA Astrophysics Data System (ADS)

Mohanbabu, A.; Saravana Kumar, R.; Mohankumar, N.

2017-12-01

This paper reports a systematic theoretical study on the microwave noise performance of graded AlGaN/GaN metal-insulator semiconductor high-electron mobility transistors (MIS-HEMTs) built on an Al2O3 substrate. The HfAlOx/AlGaN/GaN MIS-HEMT devices designed for this study show an outstanding small signal analog/RF and noise performance. The results on 1 μm gate length device show an enhancement mode operation with threshold voltage, VT = + 5.3 V, low drain leakage current, Ids,LL in the order of 1 × 10-9 A/mm along with high current gain cut-off frequency, fT of 17 GHz and maximum oscillation frequency fmax of 47 GHz at Vds = 10 V. The device Isbnd V and low-frequency noise estimation of the gate and drain noise spectral density and their correlation are evaluated using a Green's function method under different biasing conditions. The devices show a minimum noise figure (NFmin) of 1.053 dB in combination with equivalent noise resistance (Rn) of 23 Ω at 17 GHz, at Vgs = 6 V and Vds = 5 V which is relatively low and is suitable for broad-band low-noise amplifiers. This study shows that the graded AlGaN MIS-HEMT with HfAlOX gate insulator is appropriate for application requiring high-power and low-noise.

Josephson A/D Converter Development.

DTIC Science & Technology

1981-10-01

by Zappe and A Landman [20]. They conclude that the simple model of the Josephson effect is applicable up to frequencies at least as high (a) as 300...GHz. B. Time-Domain Experiments 4ooF so The early high - frequency experiments with Josephson devices I .O suggested their use as very fast logic switches...exactly as for the phenomenological model . The tunneling pacitive current paths dominate the circuit at high frequencies . current is the sum of two

Visible-Frequency Dielectric Metasurfaces for Multiwavelength Achromatic and Highly Dispersive Holograms.

PubMed

Wang, Bo; Dong, Fengliang; Li, Qi-Tong; Yang, Dong; Sun, Chengwei; Chen, Jianjun; Song, Zhiwei; Xu, Lihua; Chu, Weiguo; Xiao, Yun-Feng; Gong, Qihuang; Li, Yan

2016-08-10

Dielectric metasurfaces built up with nanostructures of high refractive index represent a powerful platform for highly efficient flat optical devices due to their easy-tuning electromagnetic scattering properties and relatively high transmission efficiencies. Here we show visible-frequency silicon metasurfaces formed by three kinds of nanoblocks multiplexed in a subwavelength unit to constitute a metamolecule, which are capable of wavefront manipulation for red, green, and blue light simultaneously. Full phase control is achieved for each wavelength by independently changing the in-plane orientations of the corresponding nanoblocks to induce the required geometric phases. Achromatic and highly dispersive meta-holograms are fabricated to demonstrate the wavefront manipulation with high resolution. This technique could be viable for various practical holographic applications and flat achromatic devices.

Defense Small Business Innovation Research Program (SBIR), Volume 4, Defense Agencies Abstracts of Phase 1 Awards 1991

DTIC Science & Technology

1991-01-01

EXPERIENCE IN DEVELOPING INTEGRATED OPTICAL DEVICES, NONLINEAR MAGNETIC-OPTIC MATERIALS, HIGH FREQUENCY MODULATORS, COMPUTER-AIDED MODELING AND SOPHISTICATED... HIGH -LEVEL PRESENTATION AND DISTRIBUTED CONTROL MODELS FOR INTEGRATING HETEROGENEOUS MECHANICAL ENGINEERING APPLICATIONS AND TOOLS. THE DESIGN IS FOCUSED...STATISTICALLY ACCURATE WORST CASE DEVICE MODELS FOR CIRCUIT SIMULATION. PRESENT METHODS OF WORST CASE DEVICE DESIGN ARE AD HOC AND DO NOT ALLOW THE

Note: Suppression of kHz-frequency switching noise in digital micro-mirror devices

NASA Astrophysics Data System (ADS)

Hueck, Klaus; Mazurenko, Anton; Luick, Niclas; Lompe, Thomas; Moritz, Henning

2017-01-01

High resolution digital micro-mirror devices (DMDs) make it possible to produce nearly arbitrary light fields with high accuracy, reproducibility, and low optical aberrations. However, using these devices to trap and manipulate ultracold atomic systems for, e.g., quantum simulation is often complicated by the presence of kHz-frequency switching noise. Here we demonstrate a simple hardware extension that solves this problem and makes it possible to produce truly static light fields. This modification leads to a 47 fold increase in the time that we can hold ultracold 6Li atoms in a dipole potential created with the DMD. Finally, we provide reliable and user friendly APIs written in Matlab and Python to control the DMD.

Current devices of respiratory physiotherapy

PubMed Central

Hristara-Papadopoulou, A; Tsanakas, J; Diomou, G; Papadopoulou, O

2008-01-01

In recent years patients with respiratory diseases use various devices, which help the removal of mucus from the airways and the improvement of pulmonary function. The aim of the present study is to determine the effectiveness of the current devices of respiratory physiotherapy, as it comes from the review of literature. The current devices of physiotherapy for patients with respiratory diseases, are presented as an alternative therapy method or a supplemental therapy and they can motivate patients to apply therapy by themselves. These devices seem to increase patients' compliance to daily treatment, because they present many benefits, as independent application, full control of therapy and easy use. These devices are the Positive Expiratory Pressure, the High Frequency Chest Wall Oscillation, the Oral High Frequency Oscillation, the Intrapulmonary Percussive Ventilation, the Incentive Spirometry the Flutter and the Acapella and the Cornet. Current devices seem to be effective in terms of mucus expectoration and pulmonary function improvement, as it is shown by published studies. The choice of the suitable device for each patient is a challenge for the physiotherapist in order to achieve better compliance in daily treatment. More controlled studies are needed due to the fact that the number of published studies is limited. PMID:19158964

Large-Area Permanent-Magnet ECR Plasma Source

NASA Technical Reports Server (NTRS)

Foster, John E.

2007-01-01

A 40-cm-diameter plasma device has been developed as a source of ions for material-processing and ion-thruster applications. Like the device described in the immediately preceding article, this device utilizes electron cyclotron resonance (ECR) excited by microwave power in a magnetic field to generate a plasma in an electrodeless (noncontact) manner and without need for an electrically insulating, microwave-transmissive window at the source. Hence, this device offers the same advantages of electrodeless, windowless design - low contamination and long operational life. The device generates a uniform, high-density plasma capable of sustaining uniform ion-current densities at its exit plane while operating at low pressure [<10(exp -4) torr (less than about 1.3 10(exp -2) Pa)] and input power <200 W at a frequency of 2.45 GHz. Though the prototype model operates at 2.45 GHz, operation at higher frequencies can be achieved by straightforward modification to the input microwave waveguide. Higher frequency operation may be desirable in those applications that require even higher background plasma densities. In the design of this ECR plasma source, there are no cumbersome, power-hungry electromagnets. The magnetic field in this device is generated by a permanent-magnet circuit that is optimized to generate resonance surfaces. The microwave power is injected on the centerline of the device. The resulting discharge plasma jumps into a "high mode" when the input power rises above 150 W. This mode is associated with elevated plasma density and high uniformity. The large area and uniformity of the plasma and the low operating pressure are well suited for such material-processing applications as etching and deposition on large silicon wafers. The high exit-plane ion-current density makes it possible to attain a high rate of etching or deposition. The plasma potential is <3 V low enough that there is little likelihood of sputtering, which, in plasma processing, is undesired because it is associated with erosion and contamination. The electron temperature is low and does not vary appreciably with power.

Trampoline Resonator Fabrication for Tests of Quantum Mechanics at High Mass

NASA Astrophysics Data System (ADS)

Weaver, Matthew; Pepper, Brian; Sonin, Petro; Eerkens, Hedwig; Buters, Frank; de Man, Sven; Bouwmeester, Dirk

2014-03-01

There has been much interest recently in optomechanical devices that can reach the ground state. Two requirements for achieving ground state cooling are high optical finesse in the cavity and high mechanical quality factor. We present a set of trampoline resonator devices using high stress silicon nitride and superpolishing of mirrors with sufficient finesse (as high as 60,000) and quality factor (as high as 480,000) for ground state cooling in a dilution refrigerator. These devices have a higher mass, between 80 and 100 ng, and lower frequency, between 200 and 500 kHz, than other devices that have been cooled to the ground state, enabling tests of quantum mechanics at a larger mass scale.

Power components for the Space Station 20-kHz power distribution system

NASA Technical Reports Server (NTRS)

Renz, David D.

1988-01-01

Since 1984, NASA Lewis Research Center was developing high power, high frequency space power components as part of The Space Station Advanced Development program. The purpose of the Advanced Development program was to accelerate existing component programs to ensure their availability for use on the Space Station. These components include a rotary power transfer device, remote power controllers, remote bus isolators, high power semiconductor, a high power semiconductor package, high frequency-high power cable, high frequency-high power connectors, and high frequency-high power transformers. All the components were developed to the prototype level and will be installed in the Lewis Research Center Space Station power system test bed.

Power components for the space station 20-kHz power distribution system

NASA Technical Reports Server (NTRS)

Renz, David D.

1988-01-01

Since 1984, NASA Lewis Research Center was developing high power, high frequency space power components as part of The Space Station Advanced Development program. The purpose of The Advanced Development program was to accelerate existing component programs to ensure their availability for use on the Space Station. These components include a rotary power transfer device, remote power controllers, remote bus isolators, high power semiconductor, a high power semiconductor package, high frequency-high power cable, high frequency-high power connectors, and high frequency-high power transformers. All the components were developed to the prototype level and will be installed in the Lewis Research Center Space Station power system test bed.

A Novel Photonic Clock and Carrier Recovery Device

NASA Technical Reports Server (NTRS)

Yao, X. Steve; Lutes, George; Maleki, Lute

1996-01-01

As data communication rates climb toward ten Gb/s, clock recovery and synchronization become more difficult, if not impossible, using conventional electronic circuits. We present in this article experimental results of a high speed clock and carrier recovery using a novel device called a photonic oscillator that we recently developed in our laboratory. This device is capable of recovering clock signals up to 70 GHz. To recover the clock, the incoming data is injected into the photonic oscillator either through the optical injection port or the electrical injection port. The free running photonic oscillator is tuned to oscillate at a nominal frequency equal to the clock frequency of the incoming data. With the injection of the data, the photonic oscillator will be quickly locked to clock frequency of the data stream while rejecting other frequency components associated with the data. Consequently, the output of the locked photonic oscillator is a continuous periodical wave synchronized with the incoming data or simply the recovered clock. We have demonstrated a clock to spur ratio of more than 60 dB of the recovered clock using this technique. Similar to the clock recovery, the photonic oscillator can be used to recover a high frequency carrier degraded by noise and an improvement of about 50 dB in signal-to-noise ratio was demonstrated. The photonic oscillator has both electrical and optical inputs and outputs and can be directly interfaced with a photonic system without signal conversion. In addition to clock and carrier recovery, the photonic oscillator can also be used for (1) stable high frequency clock signal generation, (2) frequency multiplication, (3) square wave and comb frequency generation, and (4) photonic phase locked loop.

The phototron: A light to RF energy conversion device

NASA Technical Reports Server (NTRS)

Freeman, J. W.; Simons, S.

1982-01-01

The phototron, a photoelectric device that converts light to radio frequency energy, is described. It is a vacuum tube, free electron, device that is mechanically similar to a reflex klystron with the hot filament cathode replaced by a large area photocathode. The device can operate either with an external voltage source used to accelerate the photoelectrons or with zero bias voltage; in which case the photokinetic energy of the electrons sustains the R.F. oscillations in the tuned R.F. circuit. One basic design of the phototron was tested. Frequencies as high as about 1 GHz and an overall efficiency of about 1% in the biased mode were obtained. In the unbiased mode, the frequencies of operation and efficiences are considerably lower. Success with test model suggests that considerable improvements are possible through design refinements. One such design refinement is the reduction of the length of the electron flight path.

Tunable surface acoustic wave device based on acoustoelectric interaction in ZnO/GaN heterostructures

NASA Astrophysics Data System (ADS)

Li, Rui; Reyes, Pavel I.; Ragavendiran, Sowmya; Shen, H.; Lu, Yicheng

2015-08-01

A tunable surface acoustic wave (SAW) device is developed on a multilayer structure which consists of an n-type semiconductor ZnO layer and a Ni-doped piezoelectric ZnO layer deposited on a GaN/c-Al2O3 substrate. The unique acoustic dispersion relationship between ZnO and GaN generates the multi-mode SAW response in this structure, facilitating high frequency operation. A dc bias voltage is applied to a Ti/Au gate layer deposited on the path of SAW delay line to modulate the electrical conductivity for tuning the acoustic velocity. For devices operating at 1.25 GHz, a maximum SAW velocity change of 0.9% is achieved, equivalent to the frequency change of 11.2 MHz. This voltage-controlled frequency tuning device has potential applications in resettable sensors, adaptive signal processing, and secure wireless communication.

A sub-cc nonlinear piezoelectric energy harvester for powering leadless pacemakers

PubMed Central

Ansari, MH; Karami, M Amin

2018-01-01

A miniature nonlinear piezoelectric energy harvester is developed to power state of the art leadless cardiac pacemakers from cardiac motions. The energy harvester is integrated in the leadless pacemaker and is connected to the myocardium. The energy harvester converts myocardial motions to electricity to power leadless pacemakers. The energy is stored in a battery or supercapacitor and is used for pacing. The device is composed of a bimorph piezoelectric beam confined in a gray iron frame. The system is assembled at high temperature and operated at the body temperature. The mismatch in the coefficients of thermal expansion of the beam and the frame causes the beam to buckle in body temperature. This intentional buckling makes the beam unstable and improves the power production and robustness of the device. Having high natural frequency is a major problem in microelectromechanical systems energy harvesters. Considering the small size of the energy harvester, 0.5 cm3, the natural frequency is expected to be high. In our design, the natural frequency is lowered significantly using a buckled beam and a proof mass. Since the beam is buckled, the design is bistable and nonlinear, which could increase the output power. In this article, the device is analytically modeled, and the natural frequencies and mode shapes of the energy harvester are analytically derived. The terms corresponding to geometric nonlinearities are included in the electromechanical coupled governing equations. The simulations show that the device generates sufficient electricity to power leadless pacemakers. PMID:29674842

High-frequency ultrasonic wire bonding systems

PubMed

Tsujino; Yoshihara; Sano; Ihara

2000-03-01

The vibration characteristics of longitudinal-complex transverse vibration systems with multiple resonance frequencies of 350-980 kHz for ultrasonic wire bonding of IC, LSI or electronic devices were studied. The complex vibration systems can be applied for direct welding of semiconductor tips (face-down bonding, flip-chip bonding) and packaging of electronic devices. A longitudinal-complex transverse vibration bonding system consists of a complex transverse vibration rod, two driving longitudinal transducers 7.0 mm in diameter and a transverse vibration welding tip. The vibration distributions along ceramic and stainless-steel welding tips were measured at up to 980 kHz. A high-frequency vibration system with a height of 20.7 mm and a weight of less than 15 g was obtained.

Vacuum Microelectronic Field Emission Array Devices for Microwave Amplification.

NASA Astrophysics Data System (ADS)

Mancusi, Joseph Edward

This dissertation presents the design, analysis, and measurement of vacuum microelectronic devices which use field emission to extract an electron current from arrays of silicon cones. The arrays of regularly-spaced silicon cones, the field emission cathodes or emitters, are fabricated with an integrated gate electrode which controls the electric field at the tip of the cone, and thus the electron current. An anode or collector electrode is placed above the array to collect the emission current. These arrays, which are fabricated in a standard silicon processing facility, are developed for use as high power microwave amplifiers. Field emission has been studied extensively since it was first characterized in 1928, however due to the large electric fields required practical field emission devices are difficult to make. With the development of the semiconductor industry came the development of fabrication equipment and techniques which allow for the manufacture of the precision micron-scale structures necessary for practical field emission devices. The active region of a field emission device is a vacuum, therefore the electron travel is ballistic. This analysis of field emission devices includes electric field and electron emission modeling, development of a device equivalent circuit, analysis of the parameters in the equivalent circuit, and device testing. Variations in device structure are taken into account using a statistical model based upon device measurements. Measurements of silicon field emitter arrays at DC and RF are presented and analyzed. In this dissertation, the equivalent circuit is developed from the analysis of the device structure. The circuit parameters are calculated from geometrical considerations and material properties, or are determined from device measurements. It is necessary to include the emitter resistance in the equivalent circuit model since relatively high resistivity silicon wafers are used. As is demonstrated, the circuit model accurately predicts the magnitude of the emission current at a number of typical bias current levels when the device is operating at frequencies within the range of 10 MHz to 1 GHz. At low frequencies and at high frequencies within this range, certain parameters are negligible, and simplifications may be made in the equivalent circuit model.

A micromachined thermally compensated thin film Lamb wave resonator for frequency control and sensing applications

NASA Astrophysics Data System (ADS)

Wingqvist, G.; Arapan, L.; Yantchev, V.; Katardjiev, I.

2009-03-01

Micromachined thin film plate acoustic wave resonators (FPARs) utilizing the lowest order symmetric Lamb wave (S0) propagating in highly textured 2 µm thick aluminium nitride (AlN) membranes have been successfully demonstrated (Yantchev and Katardjiev 2007 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 54 87-95). The proposed devices have a SAW-based design and exhibit Q factors of up to 3000 at a frequency around 900 MHz as well as design flexibility with respect to the required motional resistance. However, a notable drawback of the proposed devices is the non-zero temperature coefficient of frequency (TCF) which lies in the range -20 ppm K-1 to -25 ppm K-1. Thus, despite the promising features demonstrated, further device optimization is required. In this work temperature compensation of thin AlN film Lamb wave resonators is studied and experimentally demonstrated. Temperature compensation while retaining at the same time the device electromechanical coupling is experimentally demonstrated. The zero TCF Lamb wave resonators are fabricated onto composite AlN/SiO2 membranes. Q factors of around 1400 have been measured at a frequency of around 755 MHz. Finally, the impact of technological issues on the device performance is discussed in view of improving the device performance.

Detection of low frequency external electronic identification devices using commercial panel readers.

PubMed

Stewart, S C; Rapnicki, P; Lewis, J R; Perala, M

2007-09-01

The ability of a commercially available panel reader system to read International Standards Organization-compliant electronic identification devices under commercial dairy conditions was examined. Full duplex (FDX-B) and half-duplex (HDX) low frequency radio-frequency identification external ear tags were utilized. The study involved 498 Holstein cows in the final 6 wk of gestation. There were 516 total electronic identification devices (n = 334 HDX and n = 182 FDX-B). Eighteen FDX-B were replaced with HDX during the study due to repeated detection failure. There were 6,679 HDX and 3,401 FDX-B device detection attempts. There were 220 (2.2%) unsuccessful and 9,860 (97.8%) successful identification detection attempts. There were 9 unsuccessful detection attempts for HDX (6,670/6,679 = 99.9% successful detection attempts) and 211 unsuccessful detection attempts for FDX-B (3,190/3,401 = 93.8% successful detection attempts). These results demonstrate that this panel system can achieve high detection rates of HDX devices and meet the needs of the most demanding management applications. The FDX-B detection rate was not sufficient for the most demanding applications, requiring a high degree of detection by panel readers. The lower FDX-B rate may not be inherent in the device technology itself, but could be due to other factors, including the particular panel reader utilized or the tuning of the panel reader.

The present status of high-T c superconducting terahertz emitters

NASA Astrophysics Data System (ADS)

Kashiwagi, T.; Kubo, H.; Sakamoto, K.; Yuasa, T.; Tanabe, Y.; Watanabe, C.; Tanaka, T.; Komori, Y.; Ota, R.; Kuwano, G.; Nakamura, K.; Katsuragawa, T.; Tsujimoto, M.; Yamamoto, T.; Yoshizaki, R.; Minami, H.; Kadowaki, K.; Klemm, R. A.

2017-07-01

A terahertz (THz) wave emitter using the stack of intrinsic Josephson junctions present in the high-T c superconductor Bi2Sr2CaCu2O8+δ (Bi2212) has been developed. By applying a dc voltage V across the stack, the ac-Josephson effect converts this to an ac-current that emits photons at the Josephson frequency proportional to V. The Bi2212 device also behaves as and electromagnetic (EM) cavity, so depending upon the shape of the Bi2212 crystal, when the Josephson frequency matches that of a cavity resonance, the emission power is enhanced. However, the EM radiation characteristics also strongly depend upon the effects of Joule self heating of the device. In order to alleviate this Joule heating problem, we fabricated three distinct stand-alone Bi2212 sandwich device shapes, each crystal being first covered with Au on its top and bottom, and then sandwiched between sapphire plates. From our comparative studies of the three devices, we obtained important clues that could help to increase the emission power up to ∼mW and the frequency range up to several THz, as necessary for many applications such as security screening, high speed communications, medical and biological sensing, and astronomical detection, etc.

Nanohertz frequency determination for the gravity probe B high frequency superconducting quantum interference device signal.

PubMed

Salomon, M; Conklin, J W; Kozaczuk, J; Berberian, J E; Keiser, G M; Silbergleit, A S; Worden, P; Santiago, D I

2011-12-01

In this paper, we present a method to measure the frequency and the frequency change rate of a digital signal. This method consists of three consecutive algorithms: frequency interpolation, phase differencing, and a third algorithm specifically designed and tested by the authors. The succession of these three algorithms allowed a 5 parts in 10(10) resolution in frequency determination. The algorithm developed by the authors can be applied to a sampled scalar signal such that a model linking the harmonics of its main frequency to the underlying physical phenomenon is available. This method was developed in the framework of the gravity probe B (GP-B) mission. It was applied to the high frequency (HF) component of GP-B's superconducting quantum interference device signal, whose main frequency f(z) is close to the spin frequency of the gyroscopes used in the experiment. A 30 nHz resolution in signal frequency and a 0.1 pHz/s resolution in its decay rate were achieved out of a succession of 1.86 s-long stretches of signal sampled at 2200 Hz. This paper describes the underlying theory of the frequency measurement method as well as its application to GP-B's HF science signal.

Frequency response of portable PEF meters.

PubMed

Hankinson, J L; Das, M K

1995-08-01

Peak expiratory flow (PEF) is a dynamic parameter and therefore requires a measuring device with a high-frequency response. This study evaluated the frequency-response characteristics of eight commercially available PEF meters, using simulated forced-expiratory maneuvers with a computer-controlled mechanical pump. Three different PEF levels were used (200, 400, and 600 L/min) at six levels of harmonic-frequency content similar to those observed in human subjects. For waveforms with higher frequency content (at the high end or above the physiologic range), the Assess, Vitalograph, Pocket Peak, and Spir-O-Flow PEF meters all overread PEF (greater than 15% difference from target values) at all three PEF levels. These results suggest that the frequency response of PEF meters is an important consideration in the selection of such meters and should be included in device requirements. The current practice of using various levels of American Thoracic Society (ATS) waveform 24 with its low-frequency content may not adequately evaluate the frequency characteristics of PEF meters. An upper range (5% of the fundamental frequency) of 12 Hz, within the range observed in normal subjects, appears to be more practical than an upper limit of 20 Hz.

High-frequency high-voltage high-power DC-to-DC converters

NASA Astrophysics Data System (ADS)

Wilson, T. G.; Owen, H. A., Jr.; Wilson, P. M.

1981-07-01

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

High-frequency high-voltage high-power DC-to-DC converters

NASA Technical Reports Server (NTRS)

Wilson, T. G.; Owen, H. A., Jr.; Wilson, P. M.

1981-01-01

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

Intelligent telemetric stent for wireless monitoring of intravascular pressure and its in vivo testing.

PubMed

Chen, Xing; Brox, Daniel; Assadsangabi, Babak; Hsiang, York; Takahata, Kenichi

2014-10-01

This paper reports a sensor-integrated telemetric stent targeted at wireless detection and monitoring of restenosis, a common vascular complication induced by stent implantation. The developed "smart" stent incorporates the design and fabrication approaches that raise the practicality of the device, being tested in an in vivo study that validates its operating principle. The stent is produced to have a gold-coated helical-like structure that serves as a high-performance inductor/antenna and integrated with a novel capacitive pressure sensor chip, all based on medical-grade stainless steel. The stent device forms an inductor-capacitor resonant tank that enables radio-frequency (RF) wireless pressure sensing in an operating frequency range of 30-80 MHz. With an overall length of 20 mm, the device is designed to be compatible with standard balloon catheters and necessary crimping process. The balloon-expanded devices are characterized in saline and blood to determine selective coating of passivation layer, Parylene C, with tailored thicknesses in order to maximize both RF and sensing abilities. In vitro testing of the devices reveals a frequency sensitivity up to 146 ppm/mmHg over a pressure range of 250 mmHg. Tests in pig models show wireless detection of device's resonance and frequency response to variations in local blood pressure, the targeted function of the device.

Radio-frequency flexible and stretchable electronics: the need, challenges and opportunities

NASA Astrophysics Data System (ADS)

Jung, Yei Hwan; Seo, Jung-Hun; Zhang, Huilong; Lee, Juhwan; Cho, Sang June; Chang, Tzu-Hsuan; Ma, Zhenqiang

2017-05-01

Successful integration of ultrathin flexible or stretchable systems with new applications, such as medical devices and biodegradable electronics, have intrigued many researchers and industries around the globe to seek materials and processes to create high-performance, non-invasive and cost-effective electronics to match those of state-of-the-art devices. Nevertheless, the crucial concept of transmitting data or power wirelessly for such unconventional devices has been difficult to realize due to limitations of radio-frequency (RF) electronics in individual components that form a wireless circuitry, such as antenna, transmission line, active devices, passive devices etc. To overcome such challenges, these components must be developed in a step-by-step manner, as each component faces a number of different challenges in ultrathin formats. Here, we report on materials and design considerations for fabricating flexible and stretchable electronics systems that operate in the microwave level. High-speed flexible active devices, including cost effective Si-based strained MOSFETs, GaAs-based HBTs and GaN-based HEMTs, performing at multi-gigahertz frequencies are presented. Furthermore, flexible or stretchable passive devices, including capacitors, inductors and transmission lines that are vital parts of a microwave circuitry are also demonstrated. We also present unique applications using the presented flexible or stretchable RF components, including wearable RF electronics and biodegradable RF electronics, which were impossible to achieve using conventional rigid, wafer-based technology. Further opportunities like implantable systems exist utilizing such ultrathin RF components, which are discussed in this report as well.

DSL prescriptive targets for bone conduction devices: adaptation and comparison to clinical fittings.

PubMed

Hodgetts, William E; Scollie, Susan D

2017-07-01

To develop an algorithm that prescribes targets for bone conduction frequency response shape, compression, and output limiting, along with a clinical method that ensures accurate transforms between assessment and verification stages of the clinical workflow. Technical report of target generation and validation. We recruited 39 adult users of unilateral percutaneous bone conduction hearing aids with a range of unilateral, bilateral, mixed and conductive hearing losses across the sample. The initial algorithm over-prescribed output compared to the user's own settings in the low frequencies, but provided a good match to user settings in the high frequencies. Corrections to the targets were derived and implemented as a low-frequency cut aimed at improving acceptance of the wearer's own voice during device use. The DSL-BCD prescriptive algorithm is compatible with verification of devices and fine-tuning to target for percutaneous bone conduction hearing devices that can be coupled to a skull simulator. Further study is needed to investigate the appropriateness of this prescriptive algorithm for other input levels, and for other clinical populations including those with single-sided deafness, bilateral devices, children and users of transcutaneous bone conduction hearing aids.

Experimental demonstration of subwavelength domino plasmon devices for compact high-frequency circuit.

PubMed

Ma, Y G; Lan, L; Zhong, S M; Ong, C K

2011-10-24

In optical frequency, surface plasmons of metal provide us a prominent way to build compact photonic devices or circuits with non-diffraction limit. It is attributed by their extraordinary electromagnetic confining effect. But in the counterpart of lower frequencies, plasmonics behavior of metal is screened by eddy current induced in a certain skin depth. To amend this, spoof plasmons engineered by artificial structures have been introduced to mimic surface plasmons in these frequencies. But it is less useful for practical application due to their weak field confinement as manifested by large field decaying length in the upper dielectric space. Recently, a new type of engineered plasmons, domino plasmon was theoretically proposed to produce unusual field confinement and waveguiding capabilities that make them very attractive for ultra-compact device applications [Opt. Exp. 18, 754-764 (2010)]. In this work, we implemented these ideas and built three waveguiding devices based on domino plasmons. Their strong capabilities to produce versatile and ultra-compact devices with multiple electromagnetic functions have been experimentally verified in microwaves. And that can be extended to THz regime to pave the way for a new class of integrated wave circuits. © 2011 Optical Society of America

High spectral purity Kerr frequency comb radio frequency photonic oscillator

PubMed Central

Liang, W.; Eliyahu, D.; Ilchenko, V. S.; Savchenkov, A. A.; Matsko, A. B.; Seidel, D.; Maleki, L.

2015-01-01

Femtosecond laser-based generation of radio frequency signals has produced astonishing improvements in achievable spectral purity, one of the basic features characterizing the performance of an radio frequency oscillator. Kerr frequency combs hold promise for transforming these lab-scale oscillators to chip-scale level. In this work we demonstrate a miniature 10 GHz radio frequency photonic oscillator characterized with phase noise better than −60 dBc Hz−1 at 10 Hz, −90 dBc Hz−1 at 100 Hz and −170 dBc Hz−1 at 10 MHz. The frequency stability of this device, as represented by Allan deviation measurements, is at the level of 10−10 at 1–100 s integration time—orders of magnitude better than existing radio frequency photonic devices of similar size, weight and power consumption. PMID:26260955

TECHNICAL NOTE: Direct finite-element analysis of the frequency response of a Y-Z lithium niobate SAW filter

NASA Astrophysics Data System (ADS)

Xu, Guanshui

2000-12-01

A direct finite-element model is developed for the full-scale analysis of the electromechanical phenomena involved in surface acoustic wave (SAW) devices. The equations of wave propagation in piezoelectric materials are discretized using the Galerkin method, in which an implicit algorithm of the Newmark family with unconditional stability is implemented. The Rayleigh damping coefficients are included in the elements near the boundary to reduce the influence of the reflection of waves. The performance of the model is demonstrated by the analysis of the frequency response of a Y-Z lithium niobate filter with two uniform ports, with emphasis on the influence of the number of electrodes. The frequency response of the filter is obtained through the Fourier transform of the impulse response, which is solved directly from the finite-element simulation. It shows that the finite-element results are in good agreement with the characteristic frequency response of the filter predicted by the simple phase-matching argument. The ability of the method to evaluate the influence of the bulk waves at the high-frequency end of the filter passband and the influence of the number of electrodes on insertion loss is noteworthy. We conclude that the direct finite-element analysis of SAW devices can be used as an effective tool for the design of high-performance SAW devices. Some practical computational challenges of finite-element modeling of SAW devices are discussed.

77 FR 53159 - Passenger Use of Portable Electronic Devices on Board Aircraft

Federal Register 2010, 2011, 2012, 2013, 2014

2012-08-31

... to navigation systems such as very high frequency (VHF) Omni Range (VOR) navigation systems. \\1\\ 14... navigation, communication, and surveillance radio receivers that may be susceptible at certain frequencies to... space by electromagnetic waves on specific radio frequencies that are used to communicate information...

Modeling of planar varactor frequency multiplier devices with blocking barriers

NASA Technical Reports Server (NTRS)

Lieneweg, Udo; Tolmunen, T. J.; Frerking, Margaret A.; Maserjian, Joseph

1992-01-01

Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. Role and limitation of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) have moderate efficiency but a broad range of power operation, whereas devices with doped drift regions (BNN) have high efficiency in a narrow power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2/Si and AlAs/GaAs and means for increasing the power of BNN structures are considered.

Modeling of planar varactor frequency multiplier devices with blocking barriers

NASA Astrophysics Data System (ADS)

Lieneweg, Udo; Tolmunen, T. J.; Frerking, Margaret A.; Maserjian, Joseph

1992-05-01

Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. Role and limitation of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) have moderate efficiency but a broad range of power operation, whereas devices with doped drift regions (BNN) have high efficiency in a narrow power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2/Si and AlAs/GaAs and means for increasing the power of BNN structures are considered.

High-frequency acoustic spectrum analyzer based on polymer integrated optics

NASA Astrophysics Data System (ADS)

Yacoubian, Araz

This dissertation presents an acoustic spectrum analyzer based on nonlinear polymer-integrated optics. The device is used in a scanning heterodyne geometry by zero biasing a Michelson interferometer. It is capable of detecting vibrations from DC to the GHz range. Initial low frequency experiments show that the device is an effective tool for analyzing an acoustic spectrum even in noisy environments. Three generations of integrated sensors are presented, starting with a very lossy (86 dB total insertion loss) initial device that detects vibrations as low as λ/10, and second and third generation improvements with a final device of 44 dB total insertion loss. The sensor was further tested for detecting a pulsed laser-excited vibration and resonances due to the structure of the sample. The data are compared to the acoustic spectrum measured using a low loss passive fiber interferometer detection scheme which utilizes a high speed detector. The peaks present in the passive detection scheme are clearly visible with our sensor data, which have a lower noise floor. Hybrid integration of GHz electronics is also investigated in this dissertation. A voltage controlled oscillator (VCO) is integrated on a polymer device using a new approach. The VCO is shown to operate as specified by the manufacturer, and the RF signal is efficiently launched onto the micro-strip line used for EO modulation. In the future this technology can be used in conjunction with the presented sensor to produce a fully integrated device containing high frequency drive electronics controlled by low DC voltage. Issues related to device fabrication, loss analysis, RF power delivery to drive circuitry, efficient poling of large area samples, and optimizing poling conditions are also discussed throughout the text.

Microfocus computed tomography in medicine

NASA Astrophysics Data System (ADS)

Obodovskiy, A. V.

2018-02-01

Recent advances in the field of high-frequency power schemes for X-ray devices allow the creation of high-resolution instruments. At the department of electronic devices and Equipment of the St. Petersburg State Electrotechnical University, a model of a microfocus computer tomograph was developed. Used equipment allows to receive projection data with an increase up to 100 times. A distinctive feature of the device is the possibility of implementing various schemes for obtaining projection data.

Laser vibrometer measurements and middle ear prostheses

NASA Astrophysics Data System (ADS)

Flock, Stephen T.; Dornhoffer, John; Ferguson, Scott

1997-05-01

One of us has developed an improved partial ossicular replacement prosthesis that is easier to implant and, based on pilot clinical measurements, results in better high-frequency hearing as compared to patients receiving one of the alternative prostheses. It is hypothesized that the primary reason for this is because of the relatively light weight (about 25 mg) and low compliance of the prosthesis, which could conceivably result in better high frequency vibrational characteristics. The purpose of our initial work was to develop an instrument suitable for objectively testing the vibrational characteristics of prostheses. We have developed a laser based device suitable for measuring the vibrational characteristics of the oval window or other structures of the middle ear. We have tested this device using a piezoelectric transducer excited at audio frequencies, as well as on the oval window in human temporal bones harvested from cadavers. The results illustrate that it is possible to non-invasively monitor the vibrational characteristics of anatomic structures with a very inexpensive photonic device.

The Development of Si and SiGe Technologies for Microwave and Millimeter-Wave Integrated Circuits

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Alterovitz, Samuel A.; Katehi, Linda P. B.; Bhattacharya, Pallab K.

1997-01-01

Historically, microwave technology was developed by military and space agencies from around the world to satisfy their unique radar, communication, and science applications. Throughout this development phase, the sole goal was to improve the performance of the microwave circuits and components comprising the systems. For example, power amplifiers with output powers of several watts over broad bandwidths, low noise amplifiers with noise figures as low as 3 dB at 94 GHz, stable oscillators with low noise characteristics and high output power, and electronically steerable antennas were required. In addition, the reliability of the systems had to be increased because of the high monetary and human cost if a failure occurred. To achieve these goals, industry, academia and the government agencies supporting them chose to develop technologies with the greatest possibility of surpassing the state of the art performance. Thus, Si, which was already widely used for digital circuits but had material characteristics that were perceived to limit its high frequency performance, was bypassed for a progression of devices starting with GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and ending with InP Pseudomorphic High Electron Mobility Transistors (PHEMTs). For each new material or device structure, the electron mobility increased, and therefore, the high frequency characteristics of the device were improved. In addition, ultra small geometry lithographic processes were developed to reduce the gate length to 0.1 pm which further increases the cutoff frequency. The resulting devices had excellent performance through the millimeter-wave spectrum.

Extremely Bendable, High-Performance Integrated Circuits Using Semiconducting Carbon Nanotube Networks for Digital, Analog, and Radio-Frequency Applications

DTIC Science & Technology

2012-02-07

circuits on mechanically flexible substrates for digital, analog and radio frequency applications. The asobtained thin-film transistors ( TFTs ) exhibit... flexible substrates for digital, analog and radio frequency applications. The as- obtained thin-film transistors ( TFTs ) exhibit highly uniform device...LCD) and organic light- emitting diode ( OLED ) displays lack the transparency and flexibility and are thus unsuitable for flexible electronic

Micromachined ultrasonic transducers with piezoelectric aluminum nitride thin films

NASA Astrophysics Data System (ADS)

Wang, Qianghua

In this research, a laboratory prototype of micromachined ultrasonic transducer (MUT) has been designed and fabricated with the application of piezoelectric aluminum nitride (AlN) thin films. The fabrication process of MUT device, especially the deposition of AlN thin film, is compatible with a standard integrated circuits (IC) technology. Preliminary results have demonstrated the feasibility of AlN thin film applied in MUT for medical ultrasonic detection. AlN thin film was grown on aluminum metal layer by plasma source molecular beam epitaxy (PSMBE) system. X-ray diffraction (XRD) shows the films exhibit a high c-axis texture for a thickness of 1.2 mum grown at a temperature of 450°C. For the AlN film of 1.20 mum, residual stress was a compressive stress of 883 Mpa, which reduced with increasing thickness of the film. Based on the fundamentals of vibration and piezoelectricity, MUT device including silicon resonator and AlN sandwich structure has been designed. A prototype of 8 x 8 devices on a 3″ silicon (100) wafer has been fabricated. A series of experiments were conducted to find the process flow and the optimum process parameters. MUT devices were characterized by optical, electrical, and acoustic measurements. The measured resonant frequencies AlN MUT and PVDF MUT devices were larger than the calculated value in order of 5% to 12%. The ratios of the flexural frequencies to the fundamental frequency were much close to the MUT design model within a 3% error for AlN MUT devices. Resonant frequencies of AlN MUT devices were also verified by the reflection coefficient with a network analyzer and the electrical impedance with an impendence analyzer. Effective coupling factors of AlN MUT devices were determined to be 0.18 from the resonant frequency and the antiresonant frequency. Fractional bandwidth of an AlN MUT was 8.30% at the center frequency of 2.65 MHz. Pressure sensitivity was stable between 14 mV/MPa and 18 mV/MPa independent on the pressure intensity and the distance from the ultrasonic source to the AlN MUT device. Immersion measurement, device linear characteristics, and performance of AlN MUT device exhibit a great potential for the state-of-art ultrasonic camera.

An atomic magnetometer with autonomous frequency stabilization and large dynamic range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pradhan, S., E-mail: spradhan@barc.gov.in, E-mail: pradhans75@gmail.com; Poornima,; Dasgupta, K.

2015-06-15

The operation of a highly sensitive atomic magnetometer using elliptically polarized resonant light is demonstrated. It is based on measurement of zero magnetic field resonance in degenerate two level systems using polarimetric detection. The transmitted light through the polarimeter is used for laser frequency stabilization, whereas reflected light is used for magnetic field measurement. Thus, the experimental geometry allows autonomous frequency stabilization of the laser frequency leading to compact operation of the overall device and has a preliminary sensitivity of <10 pT/Hz{sup 1/2} @ 1 Hz. Additionally, the dynamic range of the device is improved by feedback controlling the biasmore » magnetic field without compromising on its sensitivity.« less

Optical micromachined ultrasound transducers (OMUT)--a new approach for high-frequency transducers.

PubMed

Tadayon, Mohammad Amin; Ashkenazi, Shai

2013-09-01

The sensitivity and reliability of piezoelectric ultrasound transducers severely degrade in applications requiring high frequency and small element size. Alternative technologies such as capacitive micromachined ultrasound transducers (CMUT) and optical sensing and generation of ultrasound have been proposed and studied for several decades. In this paper, we present a new type of device based on optical micromachined ultrasound transducer (OMUT) technology. OMUTs rely on microfabrication techniques to construct micrometerscale air cavities capped by an elastic membrane. A modified photoresist bonding process has been developed to facilitate the fabrication of these devices. We will describe the design, fabrication, and testing of prototype OMUT devices which implement a receive-only function. Future design modifications are proposed for incorporating complete transmit¿receive functionality in a single element.

Ultra high voltage MOS controlled 4H-SiC power switching devices

NASA Astrophysics Data System (ADS)

Ryu, S.; Capell, C.; Van Brunt, E.; Jonas, C.; O'Loughlin, M.; Clayton, J.; Lam, K.; Pala, V.; Hull, B.; Lemma, Y.; Lichtenwalner, D.; Zhang, Q. J.; Richmond, J.; Butler, P.; Grider, D.; Casady, J.; Allen, S.; Palmour, J.; Hinojosa, M.; Tipton, C. W.; Scozzie, C.

2015-08-01

Ultra high voltage (UHV, >15 kV) 4H-silicon carbide (SiC) power devices have the potential to significantly improve the system performance, reliability, and cost of energy conversion systems by providing reduced part count, simplified circuit topology, and reduced switching losses. In this paper, we compare the two MOS based UHV 4H-SiC power switching devices; 15 kV 4H-SiC MOSFETs and 15 kV 4H-SiC n-IGBTs. The 15 kV 4H-SiC MOSFET shows a specific on-resistance of 204 mΩ cm2 at 25 °C, which increased to 570 mΩ cm2 at 150 °C. The 15 kV 4H-SiC MOSFET provides low, temperature-independent, switching losses which makes the device more attractive for applications that require higher switching frequencies. The 15 kV 4H-SiC n-IGBT shows a significantly lower forward voltage drop (VF), along with reasonable switching performance, which make it a very attractive device for high voltage applications with lower switching frequency requirements. An electrothermal analysis showed that the 15 kV 4H-SiC n-IGBT outperforms the 15 kV 4H-SiC MOSFET for applications with switching frequencies of less than 5 kHz. It was also shown that the use of a carrier storage layer (CSL) can significantly improve the conduction performance of the 15 kV 4H-SiC n-IGBTs.

Design, characterization, and experimental use of the second generation MEMS acoustic emission device

NASA Astrophysics Data System (ADS)

Ozevin, Didem; Greve, David W.; Oppenheim, Irving J.; Pessiki, Stephen

2005-05-01

We describe the design, fabrication, testing and application (in structural experiments) of our 2004 (second generation) MEMS device, designed for acoustic emission sensing based upon experiments with our 2002 (first generation) device. Both devices feature a suite of resonant-type transducers in the frequency range between 100 kHz and 1 MHz. The 2002 device was designed to operate in an evacuated housing because of high squeeze film damping, as confirmed in our earlier experiments. In additional studies involving the 2002 device, experimental simulation of acoustic emissions in a steel plate, using pencil lead break or ball impact loading, showed that the transducers in the frequency range of 100 kHz-500 kHz presented clearer output signals than the transducers with frequencies higher than 500 kHz. Using the knowledge gained from the 2002 device, we designed and fabricated our second generation device in 2004 using the multi-user polysilicon surface micromachining (MUMPs) process. The 2004 device has 7 independent capacitive type transducers, compared to 18 independent transducers in the 2002 device, including 6 piston type transducers in the frequency range of 100 kHz to 500 kHz and 1 piston type transducer at 1 MHz to capture high frequency information. Piston type transducers developed in our research have two uncoupled modes so that twofold information can be acquired from a single transducer. In addition, the piston shape helps to reduce residual stress effect of surface micromachining process. The center to center distance between etch holes in the vibrating plate was reduced from 30 μm to 13 μm, in order to reduce squeeze film damping. As a result, the Q factor under atmospheric pressure for the 100 kHz transducer was increased to 2.37 from 0.18, and therefore the vacuum housing has been eliminated from the 2004 device. Sensitivities of transducers were also increased, by enlarging transducer area, in order to capture significant small amplitude acoustic emission events. The average individual transducer area in the 2004 device was increased to 6.97 mm2 as compared to 2.51 mm2 in the 2002 device. In this paper, we report the new experimental results on the characterization of the 2004 device and compare them with analytical results. We show improvements in sensitivity as measured by capacitance and as measured by pencil lead break experiments. Improvement in damping is also evaluated by admittance measurement in atmosphere. Pencil lead break experiments also show that transducers can operate in atmospheric pressure. Finally, we apply the device to acoustic emission experiments on crack propagation in a steel beam specimen, precracked in fatigue, in a four-point bending test.

Device to monitor sock use in people using prosthetic limbs: technical report.

PubMed

Sanders, Joan E; Murthy, Revathi; Cagle, John C; Allyn, Katheryn J; Phillips, Reid H; Otis, Brian P

2012-01-01

A device using radio frequency identification (RFID) technology was developed to continuously monitor sock use in people who use prosthetic limbs. RFID tags were placed on prosthetic socks worn by subjects with transtibial limb loss, and a high-frequency RFID reader and antenna were placed in a portable unit mounted to the outside of the prosthetic socket. Bench testing showed the device to have a maximum read range between 5.6 cm and 12.7 cm, depending on the RFID tag used. Testing in a laboratory setting on three participants with transtibial amputation showed that the device correctly monitored sock presence during sitting, standing, and walking activity when one or two socks were worn but was less reliable when more socks were used. Accurate detection was sensitive to orientation of the tag relative to the reader, presence of carbon fiber in the prosthetic socket, pistoning of the limb in the socket, and overlap among the tags. Use of ultra-high-frequency RFID may overcome these limitations. With improvements, the technology may prove useful to practitioners prescribing volume accommodation strategies for patients by providing information about sock use between clinical visits, including timing and consistency of daily sock-ply changes.

Technical Report: A device to monitor sock use on people using prosthetic limbs

PubMed Central

Sanders, Joan; Murthy, Revathi; Cagle, John; Allyn, Katheryn; Phillips, Reid

2015-01-01

A device using radio frequency identification technology (RFID) was developed to continuously monitor sock use on people using prosthetic limbs. RFID tags were placed on prosthetic socks worn by subjects with transtibial limb loss, and a high-frequency (HF) RFID reader and antenna were placed in a portable unit mounted to the outside of the prosthetic socket. Bench testing showed the device to have a maximum read range between 5.6 cm and 12.7 cm, depending on the RFID tag used. Testing in a laboratory setting on three participants with transtibial amputation showed that the device correctly monitored sock presence during sitting, standing, and walking activity when one or two socks were worn but was less reliable when more socks were used. Accurate detection was sensitive to orientation of the tag relative to the reader, presence of carbon fiber in the prosthetic socket, pistoning of the limb in the socket, and overlap among the tags. Use of ultra high frequency (UHF) RFID may overcome these limitations. With improvements, the technology may prove useful to practitioners prescribing volume accommodation strategies for patients by providing information about sock use between clinical visits, including timing and consistency of daily sock ply changes. PMID:23341315

Growth and high rate reactive ion etching of epitaxially grown barium hexaferrite films on single crystal silicon carbide substrates

NASA Astrophysics Data System (ADS)

Chen, Zhaohui

Ferrites are an invaluable group of insulating magnetic materials used for high frequency microwave applications in such passive electronic devices as isolators, phase shifters, and circulators. Because of their high permeability, non-reciprocal electromagnetic properties, and low eddy current losses, there are no other materials that serve such a broad range of applications. Until recently, they have been widely employed in bulk form, with little success in thin film-based applications in commercial or military microwave technologies. In today's technology, emerging electronic systems, such as high frequency, high power wireless and satellite communications (GPS, Bluetooth, WLAN, commercial radar, etc) thin film materials are in high demand. It is widely recognized that as high frequency devices shift to microwave frequencies the integration of passive devices with semiconductor electronics holds significant advantages in the realization of miniaturization, broader bandwidths, higher performance, speed, power and lower production costs. Thus, the primary objective of this thesis is to explore the integration of ferrite films with wide band gap semiconductor substrates for the realization of monolithic integrated circuits (MICs). This thesis focuses on two key steps for the integration of barium hexaferrite (Ba M-type or BaM) devices on semiconductor substrates. First, the development of high crystal quality ferrite film growth via pulsed laser deposition on wide band gap silicon carbide semiconductor substrates, and second, the effective patterning of BaM films using dry etching techniques. To address part one, BaM films were deposited on 6H silicon carbide (0001) substrates by Pulsed Laser Deposition. X-ray diffraction showed strong crystallographic alignment while pole figures exhibited reflections consistent with epitaxial growth. After optimized annealing, BaM films have a perpendicular magnetic anisotropy field of 16,900 Oe, magnetization (4piMs) of 4.4 kG, and ferromagnetic resonance peak-to-peak derivative linewidth at 53 GHz of 96 Oe. This combination of properties qualifies these films for microwave device applications. This marks the first growth of a microwave ferrite on SiC substrates and offers a new approach in the design and development of mu-wave and mm-wave monolithic integrated circuits. In part two, high-rate reactive ion etching using CHF3/SF6 gas mixtures was successfully demonstrated on BaM films, resulting in high aspect profile features of less than 50 nm in lateral dimension. These demonstrations enable the future integration of ferrites into MIC devices and technologies.

Prefire identification for pulse-power systems

DOEpatents

Longmire, J.L.; Thuot, M.E.; Warren, D.S.

1982-08-23

Prefires in a high-power, high-frequency, multi-stage pulse generator are detected by a system having an EMI shielded pulse timing transmitter associated with and tailored to each stage of the pulse generator. Each pulse timing transmitter upon detection of a pulse triggers a laser diode to send an optical signal through a high frequency fiber optic cable to a pulse timing receiver which converts the optical signal to an electrical pulse. The electrical pulses from all pulse timing receivers are fed through an OR circuit to start a time interval measuring device and each electrical pulse is used to stop an individual channel in the measuring device thereby recording the firing sequence of the multi-stage pulse generator.

Prefire identification for pulse power systems

DOEpatents

Longmire, Jerry L.; Thuot, Michael E.; Warren, David S.

1985-01-01

Prefires in a high-power, high-frequency, multi-stage pulse generator are detected by a system having an EMI shielded pulse timing transmitter associated with and tailored to each stage of the pulse generator. Each pulse timing transmitter upon detection of a pulse triggers a laser diode to send an optical signal through a high frequency fiber optic cable to a pulse timing receiver which converts the optical signal to an electrical pulse. The electrical pulses from all pulse timing receivers are fed through an OR circuit to start a time interval measuring device and each electrical pulse is used to stop an individual channel in the measuring device thereby recording the firing sequence of the multi-stage pulse generator.

Heterodyne mixing of millimetre electromagnetic waves and sub-THz sound in a semiconductor device

PubMed Central

Heywood, Sarah L.; Glavin, Boris A.; Beardsley, Ryan P.; Akimov, Andrey V.; Carr, Michael W.; Norman, James; Norton, Philip C.; Prime, Brian; Priestley, Nigel; Kent, Anthony J.

2016-01-01

We demonstrate heterodyne mixing of a 94 GHz millimetre wave photonic signal, supplied by a Gunn diode oscillator, with coherent acoustic waves of frequency ~100 GHz, generated by pulsed laser excitation of a semiconductor surface. The mixing takes place in a millimetre wave Schottky diode, and the intermediate frequency electrical signal is in the 1–12 GHz range. The mixing process preserves all the spectral content in the acoustic signal that falls within the intermediate frequency bandwidth. Therefore this technique may find application in high-frequency acoustic spectroscopy measurements, exploiting the nanometre wavelength of sub-THz sound. The result also points the way to exploiting acoustoelectric effects in photonic devices working at sub-THz and THz frequencies, which could provide functionalities at these frequencies, e.g. acoustic wave filtering, that are currently in widespread use at lower (GHz) frequencies. PMID:27477841

Modeling and Design of GaN High Electron Mobility Transistors and Hot Electron Transistors through Monte Carlo Particle-based Device Simulations

NASA Astrophysics Data System (ADS)

Soligo, Riccardo

In this work, the insight provided by our sophisticated Full Band Monte Carlo simulator is used to analyze the behavior of state-of-art devices like GaN High Electron Mobility Transistors and Hot Electron Transistors. Chapter 1 is dedicated to the description of the simulation tool used to obtain the results shown in this work. Moreover, a separate section is dedicated the set up of a procedure to validate to the tunneling algorithm recently implemented in the simulator. Chapter 2 introduces High Electron Mobility Transistors (HEMTs), state-of-art devices characterized by highly non linear transport phenomena that require the use of advanced simulation methods. The techniques for device modeling are described applied to a recent GaN-HEMT, and they are validated with experimental measurements. The main techniques characterization techniques are also described, including the original contribution provided by this work. Chapter 3 focuses on a popular technique to enhance HEMTs performance: the down-scaling of the device dimensions. In particular, this chapter is dedicated to lateral scaling and the calculation of a limiting cutoff frequency for a device of vanishing length. Finally, Chapter 4 and Chapter 5 describe the modeling of Hot Electron Transistors (HETs). The simulation approach is validated by matching the current characteristics with the experimental one before variations of the layouts are proposed to increase the current gain to values suitable for amplification. The frequency response of these layouts is calculated, and modeled by a small signal circuit. For this purpose, a method to directly calculate the capacitance is developed which provides a graphical picture of the capacitative phenomena that limit the frequency response in devices. In Chapter 5 the properties of the hot electrons are investigated for different injection energies, which are obtained by changing the layout of the emitter barrier. Moreover, the large signal characterization of the HET is shown for different layouts, where the collector barrier was scaled.

MEASUREMENT OF PHONON TRANSPORT IN GaN-ON-SiC AND GaN-ON-DIAMOND HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICES

DTIC Science & Technology

2017-10-16

DARPA) or the U.S. Government. Report contains color. 14. ABSTRACT The objective of this project is to experimentally study the transient non ...the Metal Thin Film in TDTR ........................................ 14 4.3 Experimental Observation of the Frequency Filtering Effect...scale of the device layers and the high density of interfaces, non -diffusive heat conduction plays a critical role in thermal transport of GaN devices

Home food and activity assessment. Development and validation of an instrument for diverse families of young children.

PubMed

Boles, Richard E; Burdell, Alexandra; Johnson, Susan L; Gavin, William J; Davies, Patricia L; Bellows, Laura L

2014-09-01

The purpose of this study was to refine and psychometrically test an instrument measuring the home food and activity environment of geographically and economically diverse families of preschool aged children. Caregivers of preschool aged children (n = 83) completed a modified self-report questionnaire. Reliably trained researchers conducted independent observations on 25 randomly selected homes. Agreement statistics were conducted at the item level (154 total items) to determine reliability. Frequency counts were calculated to identify item availability. Results showed Kappa statistics were high (.67-1.00) between independent researchers but varied between researchers and parents resulting in 85 items achieving criterion validity (Kappa >.60). Analyses of reliable items revealed the presence in the home of a high frequency of unhealthy snack foods, high fat milk and low frequency of availability of fruits/vegetables and low fat milk. Fifty-two percent of the homes were arranged with a television in the preschool child's bedroom. Physical Activity devices also were found to have high frequency availability. Families reporting lower education reported higher levels of sugar sweetened beverages and less low-fat dairy (p < .05) compared with higher education families. Low-income families (<$27K per year) reported significantly fewer Physical Activity devices (p < .001) compared with higher income families. Hispanic families reported significantly higher numbers of Sedentary Devices (p < .05) compared with non-Hispanic families. There were no significant differences between demographic comparisons on available fruits/vegetables, meats, whole grains, and regular fat dairy. A modified home food and activity instrument was found to reliably identify foods and activity devices with geographically and economically diverse families. Copyright © 2014 Elsevier Ltd. All rights reserved.

Suppressing unsteady flow in arterio-venous fistulae

NASA Astrophysics Data System (ADS)

Grechy, L.; Iori, F.; Corbett, R. W.; Shurey, S.; Gedroyc, W.; Duncan, N.; Caro, C. G.; Vincent, P. E.

2017-10-01

Arterio-Venous Fistulae (AVF) are regarded as the "gold standard" method of vascular access for patients with end-stage renal disease who require haemodialysis. However, a large proportion of AVF do not mature, and hence fail, as a result of various pathologies such as Intimal Hyperplasia (IH). Unphysiological flow patterns, including high-frequency flow unsteadiness, associated with the unnatural and often complex geometries of AVF are believed to be implicated in the development of IH. In the present study, we employ a Mesh Adaptive Direct Search optimisation framework, computational fluid dynamics simulations, and a new cost function to design a novel non-planar AVF configuration that can suppress high-frequency unsteady flow. A prototype device for holding an AVF in the optimal configuration is then fabricated, and proof-of-concept is demonstrated in a porcine model. Results constitute the first use of numerical optimisation to design a device for suppressing potentially pathological high-frequency flow unsteadiness in AVF.

Frequency-agile gyrotron for electron decoupling and pulsed dynamic nuclear polarization

NASA Astrophysics Data System (ADS)

Scott, Faith J.; Saliba, Edward P.; Albert, Brice J.; Alaniva, Nicholas; Sesti, Erika L.; Gao, Chukun; Golota, Natalie C.; Choi, Eric J.; Jagtap, Anil P.; Wittmann, Johannes J.; Eckardt, Michael; Harneit, Wolfgang; Corzilius, Björn; Th. Sigurdsson, Snorri; Barnes, Alexander B.

2018-04-01

We describe a frequency-agile gyrotron which can generate frequency-chirped microwave pulses. An arbitrary waveform generator (AWG) within the NMR spectrometer controls the microwave frequency, enabling synchronized pulsed control of both electron and nuclear spins. We demonstrate that the acceleration of emitted electrons, and thus the microwave frequency, can be quickly changed by varying the anode voltage. This strategy results in much faster frequency response than can be achieved by changing the potential of the electron emitter, and does not require a custom triode electron gun. The gyrotron frequency can be swept with a rate of 20 MHz/μs over a 670 MHz bandwidth in a static magnetic field. We have already implemented time-domain electron decoupling with dynamic nuclear polarization (DNP) magic angle spinning (MAS) with this device. In this contribution, we show frequency-swept DNP enhancement profiles recorded without changing the NMR magnet or probe. The profile of endofullerenes exhibits a DNP profile with a <10 MHz linewidth, indicating that the device also has sufficient frequency stability, and therefore phase stability, to implement pulsed DNP mechanisms such as the frequency-swept solid effect. We describe schematics of the mechanical and vacuum construction of the device which includes a novel flanged sapphire window assembly. Finally, we discuss how commercially available continuous-wave gyrotrons can potentially be converted into similar frequency-agile high-power microwave sources.

Sound wave resonances in micro-electro-mechanical systems devices vibrating at high frequencies according to the kinetic theory of gases

NASA Astrophysics Data System (ADS)

Desvillettes, Laurent; Lorenzani, Silvia

2012-09-01

The mechanism leading to gas damping in micro-electro-mechanical systems (MEMS) devices vibrating at high frequencies is investigated by using the linearized Boltzmann equation based on simplified kinetic models and diffuse reflection boundary conditions. Above a certain frequency of oscillation, the sound waves propagating through the gas are trapped in the gaps between the moving elements and the fixed boundaries of the microdevice. In particular, we found a scaling law, valid for all Knudsen numbers Kn (defined as the ratio between the gas mean free path and a characteristic length of the gas flow), that predicts a resonant response of the system. This response enables a minimization of the damping force exerted by the gas on the oscillating wall of the microdevice.

Design and performance study of a DC-DC flyback converter based on wide bandgap power devices for photovoltaic applications

NASA Astrophysics Data System (ADS)

Alharbi, Salah S.; Alharbi, Saleh S.; Al-bayati, Ali M. S.; Matin, Mohammad

2017-08-01

This paper presents a high-performance dc-dc flyback converter design based on wide bandgap (WBG) semiconductor devices for photovoltaic (PV) applications. Two different power devices, a gallium nitride (GaN)-transistor and a silicon (Si)-MOSFET, are implemented individually in the flyback converter to examine their impact on converter performance. The total power loss of the converter with different power devices is analyzed for various switching frequencies. Converter efficiency is evaluated at different switching frequencies, input voltages, and output power levels. The results reveal that the converter with the GaN-transistor has lower total power loss and better efficiency compared to the converter with the conventional Si-MOSFET.

High Temperature Superconductivity Applications for Electronic Warfare and Microwave Systems

DTIC Science & Technology

1990-05-01

instantaneous frequency measurement (IFM), as well as, switched delay lines for EW radar range deception and low loss, high resolution MMIC phase...Junction (JJ). This device has been demonstrated in LTSC and is used in very stable ( low noise ), frequency selective, oscillators and very low noise ...following HTSC components: 1) MMIC Filters 2) MMIC Delay Lines/Phase Shifters 3) Microwave Resonators 4) Antenna Feed Networks 5) Low Frequency Antennas 1

Time delay generation at high frequency using SOA based slow and fast light.

PubMed

Berger, Perrine; Bourderionnet, Jérôme; Bretenaker, Fabien; Dolfi, Daniel; Alouini, Mehdi

2011-10-24

We show how Up-converted Coherent Population Oscillations (UpCPO) enable to get rid of the intrinsic limitation of the carrier lifetime, leading to the generation of time delays at any high frequencies in a single SOA device. The linear dependence of the RF phase shift with respect to the RF frequency is theoretically predicted and experimentally evidenced at 16 and 35 GHz. © 2011 Optical Society of America

JPRS Report, Science & Technology, China

DTIC Science & Technology

1991-05-31

below) are as is a functional cooling source for high -Tc supercon- follows: in the fast operating mode, system frequency ducting devices. Applications...with EIMAC quality standards, and agreed that chamber and pulse magnetic field. Employing a high - the products could bear the EIMAC trademark for...calculations show that operate in a high -order mode, and provide a very high the grating, as a frequency -scan antenna, can produce output power and

21 CFR 868.2375 - Breathing frequency monitor.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Breathing frequency monitor. 868.2375 Section 868...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Monitoring Devices § 868.2375 Breathing frequency monitor. (a) Identification. A breathing (ventilatory) frequency monitor is a device intended to measure or monitor a patient...

Material and Phonon Engineering for Next Generation Acoustic Devices

NASA Astrophysics Data System (ADS)

Kuo, Nai-Kuei

This thesis presents the theoretical and experimental work related to micromachining of low intrinsic loss sapphire and phononic crystals for engineering new classes of electroacoustic devices for frequency control applications. For the first time, a low loss sapphire suspended membrane was fabricated and utilized to form the main body of a piezoelectric lateral overtone bulk acoustic resonator (LOBAR). Since the metalized piezoelectric transducer area in a LOBAR is only a small fraction of the overall resonant cavity (made out of sapphire), high quality factor (Q) overtones are attained. The experiment confirms the low intrinsic mechanical loss of the transferred sapphire thin film, and the resonators exhibit the highest Q of 5,440 at 2.8 GHz ( f·Q of 1.53.1013 Hz). This is also the highest f·Q demonstrated for aluminum-nitride-(AIN)-based Lamb wave devices to date. Beyond demonstrating a low loss device, this experimental work has laid the foundation for the future development of new micromechanical devices based on a high Q, high hardness and chemically resilient material. The search for alternative ways to more efficiently perform frequency control functionalities lead to the exploration of Phononic Crystal (PnC) structures in AIN thin films. Four unit cell designs were theoretically and experimentally investigated to explore the behavior of phononic bandgaps (PBGs) in the ultra high frequency (UHF) range: (i) the conventional square lattice with circular air scatterer, (ii) the inverse acoustic bandgap (IABG) structure, (iii) the fractal PnC, and (iv) the X-shaped PnC. Each unit cell has its unique frequency characteristic that was exploited to synthesize either cavity resonators or improve the performance of acoustic delay lines. The PBGs operate in the range of 770 MHz to 1 GHz and exhibit a maximum acoustic rejection of 40 dB. AIN Lamb wave transducers (LWTs) were employed for the experimental demonstration of the PBGs and cavity resonances. Ultra-wide bandwidth (˜10%) was achieved by implementing slanted finger transducers (SFIT) in thin film AIN. The impulse response and coupling of modes (COM) models commonly used for surface acoustic wave (SAW) devices were developed to design the operating frequency and bandwidth of the LWTs. These techniques enabled access to fast frequency solutions (impulse response method) and good pass-band ripple estimation (COM) for any piezoelectric Lamb-wave based device. The conventional and IABG unit cell designs were explored for the making of cavity resonators. A PnC cavity made with conventional design exhibits a Q of 675 at 665 MHz. Despite the low Q, its value is very high when the volume of the cavity is taken into account ( Q per unit volume of 3.1017/m3). In order to understand the limited value of Q a detailed finite element analysis is performed to unveil its dependence on the specific design of the transducer. The capabilities of the X-shaped PnCs were harvested for synthesizing a method to suppress the sidelobe response of an AIN Lamb wave (SFIT) delay line. 10 dB of sidelobe magnitude reduction was attained while leaving the pass-band unaltered. Although at a very preliminary stage, the theoretical and experimental work on AIN PnC has demonstrated that new acoustic capabilities are enabled by these metamaterials. Future electroacoustic devices that perform frequency control functions in a compact and low loss fashion can now be envisioned.

Frequency mixer having ferromagnetic film

DOEpatents

Khitun, Alexander; Roshchin, Igor V.; Galatsis, Kosmas; Bao, Mingqiang; Wang, Kang L.

2016-03-29

A frequency conversion device, which may include a radiofrequency (RF) mixer device, includes a substrate and a ferromagnetic film disposed over a surface of the substrate. An insulator is disposed over the ferromagnetic film and at least one microstrip antenna is disposed over the insulator. The ferromagnetic film provides a non-linear response to the frequency conversion device. The frequency conversion device may be used for signal mixing and amplification. The frequency conversion device may also be used in data encryption applications.

Detection beyond the Debye screening length in a high-frequency nanoelectronic biosensor.

PubMed

Kulkarni, Girish S; Zhong, Zhaohui

2012-02-08

Nanosensors based on the unique electronic properties of nanotubes and nanowires offer high sensitivity and have the potential to revolutionize the field of Point-of-Care (POC) medical diagnosis. The direct current (dc) detection of a wide array of organic and inorganic molecules has been demonstrated on these devices. However, sensing mechanism based on measuring changes in dc conductance fails at high background salt concentrations, where the sensitivity of the devices suffers from the ionic screening due to mobile ions present in the solution. Here, we successfully demonstrate that the fundamental ionic screening effect can be mitigated by operating single-walled carbon nanotube field effect transistor as a high-frequency biosensor. The nonlinear mixing between the alternating current excitation field and the molecular dipole field can generate mixing current sensitive to the surface-bound biomolecules. Electrical detection of monolayer streptavidin binding to biotin in 100 mM buffer solution is achieved at a frequency beyond 1 MHz. Theoretical modeling confirms improved sensitivity at high frequency through mitigation of the ionic screening effect. The results should promise a new biosensing platform for POC detection, where biosensors functioning directly in physiologically relevant condition are desired. © 2012 American Chemical Society

DC-DC Type High-Frequency Link DC for Improved Power Quality of Cascaded Multilevel Inverter

NASA Astrophysics Data System (ADS)

Sadikin, Muhammad; Senjyu, Tomonobu; Yona, Atsushi

2013-06-01

Multilevel inverters are emerging as a new breed of power converter options for power system applications. Recent advances in power switching devices enabled the suitability of multilevel inverters for high voltage and high power applications because they are connecting several devices in series without the need of component matching. Usually, a transformerless battery energy storage system, based on a cascaded multilevel inverter, is used as a measure for voltage and frequency deviations. System can be reduced in size, weight, and cost of energy storage system. High-frequency link circuit topology is advantageous in realizing compact and light-weight power converters for uninterruptible power supply systems, new energy systems using photovoltaic-cells, fuel-cells and so on. This paper presents a DC-DC type high-frequency link DC (HFLDC) cascaded multilevel inverter. Each converter cell is implemented a control strategy for two H-bridge inverters that are controlled with the same multicarrier pulse width modulation (PWM) technique. The proposed cascaded multilevel inverter generates lower voltage total harmonic distortion (THD) in comparison with conventional cascaded multilevel inverter. Digital simulations are carried out using PSCAD/EMTDC to validate the performance of the proposed cascaded multilevel inverter.

Simulation study of a high power density rectenna array for biomedical implantable devices

NASA Astrophysics Data System (ADS)

Day, John; Yoon, Hargsoon; Kim, Jaehwan; Choi, Sang H.; Song, Kyo D.

2016-04-01

The integration of wireless power transmission devices using microwaves into the biomedical field is close to a practical reality. Implanted biomedical devices need a long lasting power source or continuous power supply. Recent development of high efficiency rectenna technology enables continuous power supply to these implanted devices. Due to the size limit of most of medical devices, it is imperative to minimize the rectenna as well. The research reported in this paper reviews the effects of close packing the rectenna elements which show the potential of directly empowering the implanted devices, especially within a confined area. The rectenna array is tested in the X band frequency range.

Room-temperature nine-µm-wavelength photodetectors and GHz-frequency heterodyne receivers.

PubMed

Palaferri, Daniele; Todorov, Yanko; Bigioli, Azzurra; Mottaghizadeh, Alireza; Gacemi, Djamal; Calabrese, Allegra; Vasanelli, Angela; Li, Lianhe; Davies, A Giles; Linfield, Edmund H; Kapsalidis, Filippos; Beck, Mattias; Faist, Jérôme; Sirtori, Carlo

2018-04-05

Room-temperature operation is essential for any optoelectronics technology that aims to provide low-cost, compact systems for widespread applications. A recent technological advance in this direction is bolometric detection for thermal imaging, which has achieved relatively high sensitivity and video rates (about 60 hertz) at room temperature. However, owing to thermally induced dark current, room-temperature operation is still a great challenge for semiconductor photodetectors targeting the wavelength band between 8 and 12 micrometres, and all relevant applications, such as imaging, environmental remote sensing and laser-based free-space communication, have been realized at low temperatures. For these devices, high sensitivity and high speed have never been compatible with high-temperature operation. Here we show that a long-wavelength (nine micrometres) infrared quantum-well photodetector fabricated from a metamaterial made of sub-wavelength metallic resonators exhibits strongly enhanced performance with respect to the state of the art up to room temperature. This occurs because the photonic collection area of each resonator is much larger than its electrical area, thus substantially reducing the dark current of the device. Furthermore, we show that our photonic architecture overcomes intrinsic limitations of the material, such as the drop of the electronic drift velocity with temperature, which constrains conventional geometries at cryogenic operation. Finally, the reduced physical area of the device and its increased responsivity allow us to take advantage of the intrinsic high-frequency response of the quantum detector at room temperature. By mixing the frequencies of two quantum-cascade lasers on the detector, which acts as a heterodyne receiver, we have measured a high-frequency signal, above four gigahertz (GHz). Therefore, these wide-band uncooled detectors could benefit technologies such as high-speed (gigabits per second) multichannel coherent data transfer and high-precision molecular spectroscopy.

Room-temperature nine-µm-wavelength photodetectors and GHz-frequency heterodyne receivers

NASA Astrophysics Data System (ADS)

Palaferri, Daniele; Todorov, Yanko; Bigioli, Azzurra; Mottaghizadeh, Alireza; Gacemi, Djamal; Calabrese, Allegra; Vasanelli, Angela; Li, Lianhe; Davies, A. Giles; Linfield, Edmund H.; Kapsalidis, Filippos; Beck, Mattias; Faist, Jérôme; Sirtori, Carlo

2018-04-01

Room-temperature operation is essential for any optoelectronics technology that aims to provide low-cost, compact systems for widespread applications. A recent technological advance in this direction is bolometric detection for thermal imaging, which has achieved relatively high sensitivity and video rates (about 60 hertz) at room temperature. However, owing to thermally induced dark current, room-temperature operation is still a great challenge for semiconductor photodetectors targeting the wavelength band between 8 and 12 micrometres, and all relevant applications, such as imaging, environmental remote sensing and laser-based free-space communication, have been realized at low temperatures. For these devices, high sensitivity and high speed have never been compatible with high-temperature operation. Here we show that a long-wavelength (nine micrometres) infrared quantum-well photodetector fabricated from a metamaterial made of sub-wavelength metallic resonators exhibits strongly enhanced performance with respect to the state of the art up to room temperature. This occurs because the photonic collection area of each resonator is much larger than its electrical area, thus substantially reducing the dark current of the device. Furthermore, we show that our photonic architecture overcomes intrinsic limitations of the material, such as the drop of the electronic drift velocity with temperature, which constrains conventional geometries at cryogenic operation. Finally, the reduced physical area of the device and its increased responsivity allow us to take advantage of the intrinsic high-frequency response of the quantum detector at room temperature. By mixing the frequencies of two quantum-cascade lasers on the detector, which acts as a heterodyne receiver, we have measured a high-frequency signal, above four gigahertz (GHz). Therefore, these wide-band uncooled detectors could benefit technologies such as high-speed (gigabits per second) multichannel coherent data transfer and high-precision molecular spectroscopy.

Resonance Frequency Readout Circuit for a 900 MHz SAW Device

PubMed Central

Liu, Heng; Zhang, Chun; Weng, Zhaoyang; Guo, Yanshu; Wang, Zhihua

2017-01-01

A monolithic resonance frequency readout circuit with high resolution and short measurement time is presented for a 900 MHz RF surface acoustic wave (SAW) sensor. The readout circuit is composed of a fractional-N phase-locked loop (PLL) as the stimulus source to the SAW device and a phase-based resonance frequency detecting circuit using successive approximation (SAR). A new resonance frequency searching strategy has been proposed based on the fact that the SAW device phase-frequency response crosses zero monotonically around the resonance frequency. A dedicated instant phase difference detecting circuit is adopted to facilitate the fast SAR operation for resonance frequency searching. The readout circuit has been implemented in 180 nm CMOS technology with a core area of 3.24 mm2. In the experiment, it works with a 900 MHz SAW resonator with a quality factor of Q = 130. Experimental results show that the readout circuit consumes 7 mW power from 1.6 V supply. The frequency resolution is 733 Hz, and the relative accuracy is 0.82 ppm, and it takes 0.48 ms to complete one measurement. Compared to the previous results in the literature, this work has achieved the shortest measurement time with a trade-off between measurement accuracy and measurement time. PMID:28914799

Resonance Frequency Readout Circuit for a 900 MHz SAW Device.

PubMed

Liu, Heng; Zhang, Chun; Weng, Zhaoyang; Guo, Yanshu; Wang, Zhihua

2017-09-15

A monolithic resonance frequency readout circuit with high resolution and short measurement time is presented for a 900 MHz RF surface acoustic wave (SAW) sensor. The readout circuit is composed of a fractional-N phase-locked loop (PLL) as the stimulus source to the SAW device and a phase-based resonance frequency detecting circuit using successive approximation (SAR). A new resonance frequency searching strategy has been proposed based on the fact that the SAW device phase-frequency response crosses zero monotonically around the resonance frequency. A dedicated instant phase difference detecting circuit is adopted to facilitate the fast SAR operation for resonance frequency searching. The readout circuit has been implemented in 180 nm CMOS technology with a core area of 3.24 mm². In the experiment, it works with a 900 MHz SAW resonator with a quality factor of Q = 130. Experimental results show that the readout circuit consumes 7 mW power from 1.6 V supply. The frequency resolution is 733 Hz, and the relative accuracy is 0.82 ppm, and it takes 0.48 ms to complete one measurement. Compared to the previous results in the literature, this work has achieved the shortest measurement time with a trade-off between measurement accuracy and measurement time.

Immunohistochemical Analysis of the Structure of Injured Peripheral Nerve Neuroma after Electrosurgical Welding Intervention.

PubMed

Korsak, A V; Chaikovskii, Yu B

2015-10-01

Immunohistochemical analysis of changes in neuroma after surgical treatment of damaged peripheral nerve with the use of high frequency electrosurgical device for high frequency current welding of soft tissues was carried out. No adverse effects of this technology and the bipolar instrument on degeneration and regeneration of damaged nerve stem were detected.

Development of a Mechanical Scanning Device With High-Frequency Ultrasound Transducer for Ultrasonic Capsule Endoscopy.

PubMed

Wang, Xingying; Seetohul, Vipin; Chen, Ruimin; Zhang, Zhiqiang; Qian, Ming; Shi, Zhehao; Yang, Ge; Mu, Peitian; Wang, Congzhi; Huang, Zhihong; Zhou, Qifa; Zheng, Hairong; Cochran, Sandy; Qiu, Weibao

2017-09-01

Wireless capsule endoscopy has opened a new era by enabling remote diagnostic assessment of the gastrointestinal tract in a painless procedure. Video capsule endoscopy is currently commercially available worldwide. However, it is limited to visualization of superficial tissue. Ultrasound (US) imaging is a complementary solution as it is capable of acquiring transmural information from the tissue wall. This paper presents a mechanical scanning device incorporating a high-frequency transducer specifically as a proof of concept for US capsule endoscopy (USCE), providing information that may usefully assist future research. A rotary solenoid-coil-based motor was employed to rotate the US transducer with sectional electronic control. A set of gears was used to convert the sectional rotation to circular rotation. A single-element focused US transducer with 39-MHz center frequency was used for high-resolution US imaging, connected to an imaging platform for pulse generation and image processing. Key parameters of US imaging for USCE applications were evaluated. Wire phantom imaging and tissue phantom imaging have been conducted to evaluate the performance of the proposed method. A porcine small intestine specimen was also used for imaging evaluation in vitro. Test results demonstrate that the proposed device and rotation mechanism are able to offer good image resolution ( [Formula: see text]) of the lumen wall, and they, therefore, offer a viable basis for the fabrication of a USCE device.

High-power broadband plasma maser with magnetic self-insulation

NASA Astrophysics Data System (ADS)

Litvin, Vitaliy O.; Loza, Oleg T.

2018-01-01

Presented in this paper are the results of a particle-in-cell modelling of a novel high-power microwave (HPM) source which combines the properties of two devices. The first prototype is a magnetically insulated transmission line oscillator (MILO), an HPM self-oscillator which does not need an external magnetic field and irradiates a narrow spectrum depending on its iris-loaded slow-wave structure. The second prototype is a plasma maser, a Cherenkov HPM amplifier driven by a high-current relativistic electron beam propagating in a strong external magnetic field in plasma which acts as a slow-wave structure. The radiation frequency of plasma masers mainly depends on an easily variable plasma concentration; hence, their spectrum may overlap a few octaves. The plasma-based HPM device described in this paper operates without an external magnetic field: it looks like an MILO in which the iris-loaded slow-wave structure is substituted by a hollow plasma tube. The small pulse duration of ˜1.5 ns prevents a feedback rise in the 20-cm long generation section so that the device operates as a noise amplifier. Unlike conventional ultra wideband generators, the spectrum depends not only on the pulse duration but mainly on plasma, so the operation frequency of the device ranges within 12 GHz. For irradiated frequencies above 2 GHz, the total pulse energy efficiency of 7% is demonstrated at the HPM power level ˜1 GW.

Single InAs/GaSb nanowire low-power CMOS inverter.

PubMed

Dey, Anil W; Svensson, Johannes; Borg, B Mattias; Ek, Martin; Wernersson, Lars-Erik

2012-11-14

III-V semiconductors have so far predominately been employed for n-type transistors in high-frequency applications. This development is based on the advantageous transport properties and the large variety of heterostructure combinations in the family of III-V semiconductors. In contrast, reports on p-type devices with high hole mobility suitable for complementary metal-oxide-semiconductor (CMOS) circuits for low-power operation are scarce. In addition, the difficulty to integrate both n- and p-type devices on the same substrate without the use of complex buffer layers has hampered the development of III-V based digital logic. Here, inverters fabricated from single n-InAs/p-GaSb heterostructure nanowires are demonstrated in a simple processing scheme. Using undoped segments and aggressively scaled high-κ dielectric, enhancement mode operation suitable for digital logic is obtained for both types of transistors. State-of-the-art on- and off-state characteristics are obtained and the individual long-channel n- and p-type transistors exhibit minimum subthreshold swings of SS = 98 mV/dec and SS = 400 mV/dec, respectively, at V(ds) = 0.5 V. Inverter characteristics display a full signal swing and maximum gain of 10.5 with a small device-to-device variability. Complete inversion is measured at low frequencies although large parasitic capacitances deform the waveform at higher frequencies.

Calculation of selective filters of a device for primary analysis of speech signals

NASA Astrophysics Data System (ADS)

Chudnovskii, L. S.; Ageev, V. M.

2014-07-01

The amplitude-frequency responses of filters for primary analysis of speech signals, which have a low quality factor and a high rolloff factor in the high-frequency range, are calculated using the linear theory of speech production and psychoacoustic measurement data. The frequency resolution of the filter system for a sinusoidal signal is 40-200 Hz. The modulation-frequency resolution of amplitude- and frequency-modulated signals is 3-6 Hz. The aforementioned features of the calculated filters are close to the amplitudefrequency responses of biological auditory systems at the level of the eighth nerve.

Zero energy-storage ballast for compact fluorescent lamps

DOEpatents

Schultz, W.N.; Thomas, R.J.

1999-08-31

A CFL ballast includes complementary-type switching devices connected in series with their gates connected together at a control node. The switching devices supply a resonant tank circuit which is tuned to a frequency near, but slightly lower than, the resonant frequency of a resonant control circuit. As a result, the tank circuit restarts oscillations immediately following each zero crossing of the bus voltage. Such rapid restarts avoid undesirable flickering while maintaining the operational advantages and high efficacy of the CFL ballast. 4 figs.

Zero energy-storage ballast for compact fluorescent lamps

DOEpatents

Schultz, William Newell; Thomas, Robert James

1999-01-01

A CFL ballast includes complementary-type switching devices connected in series with their gates connected together at a control node. The switching devices supply a resonant tank circuit which is tuned to a frequency near, but slightly lower than, the resonant frequency of a resonant control circuit. As a result, the tank circuit restarts oscillations immediately following each zero crossing of the bus voltage. Such rapid restarts avoid undesirable flickering while maintaining the operational advantages and high efficacy of the CFL ballast.

An analytical model for inductively coupled implantable biomedical devices with ferrite rods.

PubMed

Theilmann, P T; Asbeck, P M

2009-02-01

Using approximations applicable to near field coupled implants simplified expressions for the complex mutual inductance of coaxial aligned coils with and without a cylindrical ferrite rod are derived. Experimental results for ferrite rods of various sizes and permeabilities are presented to verify the accuracy of this expression. An equivalent circuit model for the inductive link between an implant and power coil is then presented and used to investigate how ferrite size, permeability and loss affect the power available to the implant device. Enhancements in coupling provided by high frequency, low permeability nickel zinc rods are compared with low frequency high permeability manganese zinc rods.

Optical isolation based on space-time engineered asymmetric photonic band gaps

NASA Astrophysics Data System (ADS)

Chamanara, Nima; Taravati, Sajjad; Deck-Léger, Zoé-Lise; Caloz, Christophe

2017-10-01

Nonreciprocal electromagnetic devices play a crucial role in modern microwave and optical technologies. Conventional methods for realizing such systems are incompatible with integrated circuits. With recent advances in integrated photonics, the need for efficient on-chip magnetless nonreciprocal devices has become more pressing than ever. This paper leverages space-time engineered asymmetric photonic band gaps to generate optical isolation. It shows that a properly designed space-time modulated slab is highly reflective/transparent for opposite directions of propagation. The corresponding design is magnetless, accommodates low modulation frequencies, and can achieve very high isolation levels. An experimental proof of concept at microwave frequencies is provided.

Introduction to Piezoelectric Actuators and Transducers

DTIC Science & Technology

2003-06-17

a piezo-device and a metal fork. A piezoelectric buzzer is shown in Fig. 12, which has merits such as high electric power efficiency, compact size...coefficient for surface acoustic wave and so is used for SAW devices with high -stabilized frequencies. The another distinguished characteristic of...quartz is an extremely high mechanical quality factor Qm > 10 5. Lithium niobate and lithium tantalate belong to an isomorphous crystal system and

Dynamic Range Enhancement of High-Speed Electrical Signal Data via Non-Linear Compression

NASA Technical Reports Server (NTRS)

Laun, Matthew C. (Inventor)

2016-01-01

Systems and methods for high-speed compression of dynamic electrical signal waveforms to extend the measuring capabilities of conventional measuring devices such as oscilloscopes and high-speed data acquisition systems are discussed. Transfer function components and algorithmic transfer functions can be used to accurately measure signals that are within the frequency bandwidth but beyond the voltage range and voltage resolution capabilities of the measuring device.

Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

NASA Astrophysics Data System (ADS)

Zhang, Xiao-Yu; Tan, Ren-Bing; Sun, Jian-Dong; Li, Xin-Xing; Zhou, Yu; Lü, Li; Qin, Hua

2015-10-01

An AlGaN/GaN high electron mobility transistor (HEMT) device is prepared by using a semiconductor nanofabrication process. A reflective radio-frequency (RF) readout circuit is designed and the HEMT device is assembled in an RF circuit through a coplanar waveguide transmission line. A gate capacitor of the HEMT and a surface-mounted inductor on the transmission line are formed to generate LC resonance. By tuning the gate voltage Vg, the variations of gate capacitance and conductance of the HEMT are reflected sensitively from the resonance frequency and the magnitude of the RF reflection signal. The aim of the designed RF readout setup is to develop a highly sensitive HEMT-based detector. Project supported by the National Natural Science Foundation of China (Grant No. 61107093), the Suzhou Science and Technology Project, China (Grant No. ZXG2012024), and the Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant No. 2012243).

Nanoionics-Based Switches for Radio-Frequency Applications

NASA Technical Reports Server (NTRS)

Nessel, James; Lee, Richard

2010-01-01

Nanoionics-based devices have shown promise as alternatives to microelectromechanical systems (MEMS) and semiconductor diode devices for switching radio-frequency (RF) signals in diverse systems. Examples of systems that utilize RF switches include phase shifters for electronically steerable phased-array antennas, multiplexers, cellular telephones and other radio transceivers, and other portable electronic devices. Semiconductor diode switches can operate at low potentials (about 1 to 3 V) and high speeds (switching times of the order of nanoseconds) but are characterized by significant insertion loss, high DC power consumption, low isolation, and generation of third-order harmonics and intermodulation distortion (IMD). MEMS-based switches feature low insertion loss (of the order of 0.2 dB), low DC power consumption (picowatts), high isolation (>30 dB), and low IMD, but contain moving parts, are not highly reliable, and must be operated at high actuation potentials (20 to 60 V) generated and applied by use of complex circuitry. In addition, fabrication of MEMS is complex, involving many processing steps. Nanoionics-based switches offer the superior RF performance and low power consumption of MEMS switches, without need for the high potentials and complex circuitry necessary for operation of MEMS switches. At the same time, nanoionics-based switches offer the high switching speed of semiconductor devices. Also, like semiconductor devices, nanoionics-based switches can be fabricated relatively inexpensively by use of conventional integrated-circuit fabrication techniques. More over, nanoionics-based switches have simple planar structures that can easily be integrated into RF power-distribution circuits.

Functional Epitaxial Oxide Devices

DTIC Science & Technology

2010-04-12

complex oxides , epitaxial growth, antennas, varactors 16. SECURITY CLASSIFICATION OF: REPORT U b. ABSTRACT u c. THIS PAGE u 17. LIMITATION OF...Technical Report DATES COVERED (From - To) 17-06-2008-31-12-2009 4. TITLE AND SUBTITLE Functional Epitaxial Oxide Devices 5a. CONTRACT NUMBER NA...This research effort addresses the need for high performance radio frequency (RF) components, specifically varactors and miniaturized, high gain

Multi-layer topological transmissions of spoof surface plasmon polaritons.

PubMed

Pan, Bai Cao; Zhao, Jie; Liao, Zhen; Zhang, Hao Chi; Cui, Tie Jun

2016-03-04

Spoof surface plasmon polaritons (SPPs) in microwave frequency provide a high field confinement in subwavelength scale and low-loss and flexible transmissions, which have been widely used in novel transmission waveguides and functional devices. To play more important roles in modern integrated circuits and systems, it is necessary and helpful for the SPP modes to propagate among different layers of devices and chips. Owing to the highly confined property and organized near-field distribution, we show that the spoof SPPs could be easily transmitted from one layer into another layer via metallic holes and arc-shaped transitions. Such designs are suitable for both the ultrathin and flexible single-strip SPP waveguide and double-strip SPP waveguide for active SPP devices. Numerical simulations and experimental results demonstrate the broadband and high-efficiency multi-layer topological transmissions with controllable absorption that is related to the superposition area of corrugated metallic strips. The transmission coefficient of single-strip SPP waveguide is no worse than -0.8 dB within frequency band from 2.67 GHz to 10.2 GHz while the transmission of double-strip SPP waveguide keeps above -1 dB within frequency band from 2.26 GHz to 11.8 GHz. The proposed method will enhance the realizations of highly complicated plasmonic integrated circuits.

A high-resolution frequency variable experimental setup for studying ferrofluids used in magnetic hyperthermia.

PubMed

Mazon, E E; Villa-Martínez, E; Hernández-Sámano, A; Córdova-Fraga, T; Ibarra-Sánchez, J J; Calleja, H A; Leyva Cruz, J A; Barrera, A; Estrada, J C; Paz, J A; Quintero, L H; Cano, M E

2017-08-01

A scanning system for specific absorption rate of ferrofluids with superparamagnetic nanoparticles is presented in this study. The system contains an induction heating device designed and built with a resonant inverter in order to generate magnetic field amplitudes up to 38 mT, over the frequency band 180-525 kHz. Its resonant circuit involves a variable capacitor with 1 nF of capacitance steps to easily select the desired frequency, reaching from 0.3 kHz/nF up to 5 kHz/nF of resolution. The device performance is characterized in order to compare with the theoretical predictions of frequency and amplitude, showing a good agreement with the resonant inverters theory. Additionally, the setup is tested using a synthetic iron oxide with 10 ± 1 nm diameter suspended in liquid glycerol, with concentrations at 1%. Meanwhile, the temperature rise is measured to determine the specific absorption rate and calculate the dissipated power density for each f. This device is a suitable alternative to studying ferrofluids and analyzes the dependence of the power absorption density with the magnetic field intensity and frequency.

High frequency characteristic of a monolithic 500 °C OpAmp-RC integrator in SiC bipolar IC technology

NASA Astrophysics Data System (ADS)

Tian, Ye; Zetterling, Carl-Mikael

2017-09-01

This paper presents a comprehensive investigation of the frequency response of a monolithic OpAmp-RC integrator implemented in a 4H-SiC bipolar IC technology. The circuits and devices have been measured and characterized from 27 to 500 °C. The devices have been modelled to identify that the substrate capacitance is a dominant factor affecting the OpAmp's high-frequency response. Large Miller compensation capacitors of more than 540 pF are required to ensure stability of the internal OpAmp. The measured unit-gain-bandwidth product of the OpAmp is ∼1.1 MHz at 27 °C, and decreases to ∼0.5 MHz at 500 °C mainly due to the reduction of the transistor's current gain. On the other hand, it is not necessary to compensate the integrator in a relatively wide bandwidth ∼0.7 MHz over the investigated temperature range. At higher frequencies, the integrator's frequency response has been identified to be significantly affected by that of the OpAmp and load impedance. This work demonstrates the potential of this technology for high temperature applications requiring bandwidths of several megahertz.

Gigahertz flexible graphene transistors for microwave integrated circuits.

PubMed

Yeh, Chao-Hui; Lain, Yi-Wei; Chiu, Yu-Chiao; Liao, Chen-Hung; Moyano, David Ricardo; Hsu, Shawn S H; Chiu, Po-Wen

2014-08-26

Flexible integrated circuits with complex functionalities are the missing link for the active development of wearable electronic devices. Here, we report a scalable approach to fabricate self-aligned graphene microwave transistors for the implementation of flexible low-noise amplifiers and frequency mixers, two fundamental building blocks of a wireless communication receiver. A devised AlOx T-gate structure is used to achieve an appreciable increase of device transconductance and a commensurate reduction of the associated parasitic resistance, thus yielding a remarkable extrinsic cutoff frequency of 32 GHz and a maximum oscillation frequency of 20 GHz; in both cases the operation frequency is an order of magnitude higher than previously reported. The two frequencies work at 22 and 13 GHz even when subjected to a strain of 2.5%. The gigahertz microwave integrated circuits demonstrated here pave the way for applications which require high flexibility and radio frequency operations.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors.

PubMed

Giusi, G; Giordano, O; Scandurra, G; Rapisarda, M; Calvi, S; Ciofi, C

2016-04-01

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz(1/2), while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giusi, G.; Giordano, O.; Scandurra, G.

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz{sup 1/2}, while DC performances are limited only bymore » the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.« less

Note: Motor-piezoelectricity coupling driven high temperature fatigue device

NASA Astrophysics Data System (ADS)

Ma, Z. C.; Du, X. J.; Zhao, H. W.; Ma, X. X.; Jiang, D. Y.; Liu, Y.; Ren, L. Q.

2018-01-01

The design and performance evaluation of a novel high temperature fatigue device simultaneously driven by servo motor and piezoelectric actuator is our focus. The device integrates monotonic and cyclic loading functions with a maximum tensile load of 1800 N, driving frequency of 50 Hz, alternating load of 95 N, and maximum service temperature of 1200 °C. Multimodal fatigue tests with arbitrary combinations of static and dynamic loads are achieved. At temperatures that range from RT to 1100 °C, the tensile and tensile-fatigue coupling mechanical behaviors of UM Co50 alloys are investigated to verify the feasibility of the device.

Fabrication of Nd3+ and Mn2+ ions Co-doped Spinal Strontium Nanoferrites for High Frequency Device Applications

NASA Astrophysics Data System (ADS)

Ahmad, Iqbal; Shah, Syed Mujtaba; Ashiq, Muhammad Naeem; Nawaz, Faisal; Shah, Afzal; Siddiq, Muhammad; Fahim, Iqra; Khan, Samiullah

2016-10-01

Microemulsion method has been used for the synthesis of high resistive spinal nanoferrites with nominal composition Sr1- x Nd x Fe2- y Mn y O4 (0.0 ≤ x ≤ 0.1, 0.0 ≤ y ≤ 1.0) for high frequency device applications. It has been confirmed by x-ray diffraction (XRD) results that these ferrites have a cubic spinal structure with a mean crystallite size ranging from 34 mm to 47 nm. The co-substitution of Nd3+ and Mn2+ ions was performed, and its effect on electrical, dielectric and impedance properties was analyzed employing direct current (DC) resistivity measurements, dielectric measurements and electrochemical impedance spectroscopy (EIS). The DC resistivity ( ρ) value was the highest for the composition Sr0.90Nd0.1FeMnO4, but for the same composition, dielectric parameters and alternating current (AC) conductivity showed their minimum values. In the lower frequency range, the magnitudes of dielectric parameters decrease with increasing frequency and show an almost independent frequency response at higher frequencies. Dielectric polarization has been employed to explain these results. It was inferred from the results of EIS that the conduction process in the studied ferrite materials is predominantly governed by grain boundary volume.

Scalable fabrication of self-aligned graphene transistors and circuits on glass.

PubMed

Liao, Lei; Bai, Jingwei; Cheng, Rui; Zhou, Hailong; Liu, Lixin; Liu, Yuan; Huang, Yu; Duan, Xiangfeng

2012-06-13

Graphene transistors are of considerable interest for radio frequency (rf) applications. High-frequency graphene transistors with the intrinsic cutoff frequency up to 300 GHz have been demonstrated. However, the graphene transistors reported to date only exhibit a limited extrinsic cutoff frequency up to about 10 GHz, and functional graphene circuits demonstrated so far can merely operate in the tens of megahertz regime, far from the potential the graphene transistors could offer. Here we report a scalable approach to fabricate self-aligned graphene transistors with the extrinsic cutoff frequency exceeding 50 GHz and graphene circuits that can operate in the 1-10 GHz regime. The devices are fabricated on a glass substrate through a self-aligned process by using chemical vapor deposition (CVD) grown graphene and a dielectrophoretic assembled nanowire gate array. The self-aligned process allows the achievement of unprecedented performance in CVD graphene transistors with a highest transconductance of 0.36 mS/μm. The use of an insulating substrate minimizes the parasitic capacitance and has therefore enabled graphene transistors with a record-high extrinsic cutoff frequency (> 50 GHz) achieved to date. The excellent extrinsic cutoff frequency readily allows configuring the graphene transistors into frequency doubling or mixing circuits functioning in the 1-10 GHz regime, a significant advancement over previous reports (∼20 MHz). The studies open a pathway to scalable fabrication of high-speed graphene transistors and functional circuits and represent a significant step forward to graphene based radio frequency devices.

High-frequency matrix converter with square wave input

DOEpatents

Carr, Joseph Alexander; Balda, Juan Carlos

2015-03-31

A device for producing an alternating current output voltage from a high-frequency, square-wave input voltage comprising, high-frequency, square-wave input a matrix converter and a control system. The matrix converter comprises a plurality of electrical switches. The high-frequency input and the matrix converter are electrically connected to each other. The control system is connected to each switch of the matrix converter. The control system is electrically connected to the input of the matrix converter. The control system is configured to operate each electrical switch of the matrix converter converting a high-frequency, square-wave input voltage across the first input port of the matrix converter and the second input port of the matrix converter to an alternating current output voltage at the output of the matrix converter.

Review of Heterojunctin Bipolar Transistor Structure, Applications, and Reliability

NASA Technical Reports Server (NTRS)

Lee, C.; Kayali, S.

1993-01-01

Heterojunction Bipolar Transistors (HBTs) are increasingly employed in high frequency, high linerity, and high efficiency applications. As the utilization of these devices becomes more widespread, their operation will be viewed with more scrutiny.

Polycrystalline diamond RF MOSFET with MoO3 gate dielectric

NASA Astrophysics Data System (ADS)

Ren, Zeyang; Zhang, Jinfeng; Zhang, Jincheng; Zhang, Chunfu; Chen, Dazheng; Quan, Rudai; Yang, Jiayin; Lin, Zhiyu; Hao, Yue

2017-12-01

We report the radio frequency characteristics of the diamond metal-oxide-semiconductor field effect transistor with MoO3 gate dielectric for the first time. The device with 2-μm gate length was fabricated on high quality polycrystalline diamond. The maximum drain current of 150 mA/mm at VGS = -5 V and the maximum transconductance of 27 mS/mm were achieved. The extrinsic cutoff frequency of 1.2 GHz and the maximum oscillation frequency of 1.9 GHz have been measured. The moderate frequency characteristics are attributed to the moderate transconductance limited by the series resistance along the channel. We expect that the frequency characteristics of the device can be improved by increasing the magnitude of gm, or fundamentally decreasing the gate-controlled channel resistance and series resistance along the channel, and down-scaling the gate length.

Microscopic origin of low frequency noise in MoS{sub 2} field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghatak, Subhamoy; Jain, Manish; Ghosh, Arindam

2014-09-01

We report measurement of low frequency 1/f noise in molybdenum di-sulphide (MoS{sub 2}) field-effect transistors in multiple device configurations including MoS{sub 2} on silicon dioxide as well as MoS{sub 2}-hexagonal boron nitride (hBN) heterostructures. All as-fabricated devices show similar magnitude of noise with number fluctuation as the dominant mechanism at high temperatures and density, although the calculated density of traps is two orders of magnitude higher than that at the SiO{sub 2} interface. Measurements on the heterostructure devices with vacuum annealing and dual gated configuration reveals that along with the channel, metal-MoS{sub 2} contacts also play a significant role inmore » determining noise magnitude in these devices.« less

Thermally actuated resonant silicon crystal nanobalances

NASA Astrophysics Data System (ADS)

Hajjam, Arash

As the potential emerging technology for next generation integrated resonant sensors and frequency references as well as electronic filters, micro-electro-mechanical resonators have attracted a lot of attention over the past decade. As a result, a wide variety of high frequency micro/nanoscale electromechanical resonators have recently been presented. MEMS resonators, as low-cost highly integrated and ultra-sensitive mass sensors, can potentially provide new opportunities and unprecedented capabilities in the area of mass sensing. Such devices can provide orders of magnitude higher mass sensitivity and resolution compared to Film Bulk Acoustic resonators (FBAR) or the conventional quartz and Surface Acoustic Wave (SAW) resonators due to their much smaller sizes and can be batch-fabricated and utilized in highly integrated large arrays at a very low cost. In this research, comprehensive experimental studies on the performance and durability of thermally actuated micromechanical resonant sensors with frequencies up to tens of MHz have been performed. The suitability and robustness of the devices have been demonstrated for mass sensing applications related to air-borne particles and organic gases. In addition, due to the internal thermo-electro-mechanical interactions, the active resonators can turn some of the consumed electronic power back into the mechanical structure and compensate for the mechanical losses. Therefore, such resonators can provide self-sustained-oscillation without the need for any electronic circuitry. This unique property has been deployed to demonstrate a prototype self-sustained sensor for air-borne particle monitoring. I have managed to overcome one of the obstacles for MEMS resonators, which is their relatively poor temperature stability. This is a major drawback when compared with the conventional quartz crystals. A significant decrease of the large negative TCF for the resonators has been attained by doping the devices with a high concentration of phosphorous, resulting in even slightly positive TCF for some of the devices. This is also expected to improve the phase noise characteristics of oscillators implemented utilizing such frequency references by eliminating the sharp dependence to electronic noise in the resonator bias current. Finally it is well known that non-uniformities in fabrication of MEMS resonators lead to variations in their frequency. I have proposed both active (non-permanent) and permanent frequency modification to compensate for variations in frequency of the MEMS resonators.

Noise and Bandwidth Measurements of Diffusion-Cooled Nb Hot-Electron Bolometer Mixers at Frequencies Above the Superconductive Energy Gap

NASA Technical Reports Server (NTRS)

Wyss, R. A.; Karasik, B. S.; McGrath, W. R.; Bumble, B.; LeDuc, H.

1999-01-01

Diffusion-cooled Nb hot-electron bolometer (HEB) mixers have the potential to simultaneously achieve high intermediate frequency (IF) bandwidths and low mixer noise temperatures for operation at THz frequencies (above the superconductive gap energy). We have measured the IF signal bandwidth at 630 GHz of Nb devices with lengths L = 0.3, 0.2, and 0.1 micrometer in a quasioptical mixer configuration employing twin-slot antennas. The 3-dB EF bandwidth increased from 1.2 GHz for the 0.3 gm long device to 9.2 GHz for the 0.1 gm long device. These results demonstrate the expected 1/L squared dependence of the IF bandwidth at submillimeter wave frequencies for the first time, as well as the largest EF bandwidth obtained to date. For the 0.1 gm device, which had the largest bandwidth, the double sideband (DSB) noise temperature of the receiver was 320-470 K at 630 GHz with an absorbed LO power of 35 nW, estimated using the isothermal method. A version of this mixer with the antenna length scaled for operation at 2.5 THz has also been tested. A DSB receiver noise temperature of 1800 plus or minus 100 K was achieved, which is about 1,000 K lower than our previously reported results. These results demonstrate that large EF bandwidth and low-noise operation of a diffusion-cooled HEB mixer is possible at THz frequencies with the same device geometry.

Frequency-agile gyrotron for electron decoupling and pulsed dynamic nuclear polarization.

PubMed

Scott, Faith J; Saliba, Edward P; Albert, Brice J; Alaniva, Nicholas; Sesti, Erika L; Gao, Chukun; Golota, Natalie C; Choi, Eric J; Jagtap, Anil P; Wittmann, Johannes J; Eckardt, Michael; Harneit, Wolfgang; Corzilius, Björn; Th Sigurdsson, Snorri; Barnes, Alexander B

2018-04-01

We describe a frequency-agile gyrotron which can generate frequency-chirped microwave pulses. An arbitrary waveform generator (AWG) within the NMR spectrometer controls the microwave frequency, enabling synchronized pulsed control of both electron and nuclear spins. We demonstrate that the acceleration of emitted electrons, and thus the microwave frequency, can be quickly changed by varying the anode voltage. This strategy results in much faster frequency response than can be achieved by changing the potential of the electron emitter, and does not require a custom triode electron gun. The gyrotron frequency can be swept with a rate of 20 MHz/μs over a 670 MHz bandwidth in a static magnetic field. We have already implemented time-domain electron decoupling with dynamic nuclear polarization (DNP) magic angle spinning (MAS) with this device. In this contribution, we show frequency-swept DNP enhancement profiles recorded without changing the NMR magnet or probe. The profile of endofullerenes exhibits a DNP profile with a <10 MHz linewidth, indicating that the device also has sufficient frequency stability, and therefore phase stability, to implement pulsed DNP mechanisms such as the frequency-swept solid effect. We describe schematics of the mechanical and vacuum construction of the device which includes a novel flanged sapphire window assembly. Finally, we discuss how commercially available continuous-wave gyrotrons can potentially be converted into similar frequency-agile high-power microwave sources. Copyright © 2018. Published by Elsevier Inc.

High Performance Hermetic Package For LiNbO3 Electro-Optic Waveguide Devices

NASA Astrophysics Data System (ADS)

Preston, K. R.; Macdonald, B. M.; Harmon, R. A.; Ford, C. W.; Shaw, R. N.; Reid, I.; Davidson, J. H.; Beaumont, A. R.; Booth, R. C.

1989-02-01

A high performance fibre-tailed package for LiNbO3 electro-optic waveguide devices is described. The package is based around a hermetic metal submodule which contains no epoxy or other organic materials. The LiNbO3 chip is mounted using a soldering technique, and laser welding is used for fibre fixing to give stable, low loss optical coupling to single mode fibres. Optical reflections are minimised by the use of antireflective coatings on the fibre ends and waveguide facets. High speed electrical connections are made via coplanar glass-sealed leadthroughs to LiNb03 travelling wave devices, and packaged device operation to frequencies in excess of 4GHz is demonstrated.

Distributed feedback lasers

NASA Technical Reports Server (NTRS)

Ladany, I.; Andrews, J. T.; Evans, G. A.

1988-01-01

A ridge waveguide distributed feedback laser was developed in InGaAsP. These devices have demonstrated CW output powers over 7 mW with threshold currents as low as 60 mA at 25 C. Measurements of the frequency response of these devices show a 3 dB bandwidth of about 2 GHz, which may be limited by the mount. The best devices have a single mode spectra over the entire temperature range tested with a side mode suppression of about 20 dB in both CW and pulsed modes. The design of this device, including detailed modeling of the ridge guide structure, effective index calculations, and a discussion of the grating configuration are presented. Also, the fabrication of the devices is presented in some detail, especially the fabrication of and subsequent growth over the grating. In addition, a high frequency fiber pigtailed package was designed and tested, which is a suitable prototype for a commercial package.

Wavelet-based analysis of transient electromagnetic wave propagation in photonic crystals.

PubMed

Shifman, Yair; Leviatan, Yehuda

2004-03-01

Photonic crystals and optical bandgap structures, which facilitate high-precision control of electromagnetic-field propagation, are gaining ever-increasing attention in both scientific and commercial applications. One common photonic device is the distributed Bragg reflector (DBR), which exhibits high reflectivity at certain frequencies. Analysis of the transient interaction of an electromagnetic pulse with such a device can be formulated in terms of the time-domain volume integral equation and, in turn, solved numerically with the method of moments. Owing to the frequency-dependent reflectivity of such devices, the extent of field penetration into deep layers of the device will be different depending on the frequency content of the impinging pulse. We show how this phenomenon can be exploited to reduce the number of basis functions needed for the solution. To this end, we use spatiotemporal wavelet basis functions, which possess the multiresolution property in both spatial and temporal domains. To select the dominant functions in the solution, we use an iterative impedance matrix compression (IMC) procedure, which gradually constructs and solves a compressed version of the matrix equation until the desired degree of accuracy has been achieved. Results show that when the electromagnetic pulse is reflected, the transient IMC omits basis functions defined over the last layers of the DBR, as anticipated.

Thermomechanical stability and integrability of an embedded ceramic antenna with an integrated sensor element for wireless reading in harsh environments

NASA Astrophysics Data System (ADS)

Sturesson, P.; Khaji, Z.; Knaust, S.; Sundqvist, J.; Klintberg, L.; Thornell, G.

2013-12-01

This paper reports on the design, manufacturing and evaluation of a small, wirelessly powered and read resonating antenna circuit with an integrated pressure sensor. The work aims at developing miniature devices suitable for harsh environments, where high temperature prevents the use of conventional, silicon-based microdevices. Here, the device is made of alumina with platinum as conducting material. Ceramic green tapes were structured using high-precision milling, metallized using screen printing, and subsequently laminated to form stacks before they were sintered. The device's frequency shift as a function of temperature was studied up to 900°C. The contributions to the shift both from the thermomechanical deformation of the device at large, and from the integrated and, so far, self-pressurized sensor were sorted out. A total frequency shift of 3200 ppm was observed for the pressure sensor for heating over the whole range. Negligible levels of thermally induced radius of curvature were observed. With three-point bending, a frequency shift of 180 ppm was possible to induce with a curvature of radius of 220 m at a 10 N load. The results indicate that a robust pressure sensor node, which can register pressure changes of a few bars at 900°C and wirelessly transmit the signal, is viable.

Carbon nanotube chemistry and assembly for electronic devices

NASA Astrophysics Data System (ADS)

Derycke, Vincent; Auvray, Stéphane; Borghetti, Julien; Chung, Chia-Ling; Lefèvre, Roland; Lopez-Bezanilla, Alejandro; Nguyen, Khoa; Robert, Gaël; Schmidt, Gregory; Anghel, Costin; Chimot, Nicolas; Lyonnais, Sébastien; Streiff, Stéphane; Campidelli, Stéphane; Chenevier, Pascale; Filoramo, Arianna; Goffman, Marcelo F.; Goux-Capes, Laurence; Latil, Sylvain; Blase, Xavier; Triozon, François; Roche, Stephan; Bourgoin, Jean-Philippe

2009-05-01

Carbon nanotubes (CNTs) have exceptional physical properties that make them one of the most promising building blocks for future nanotechnologies. They may in particular play an important role in the development of innovative electronic devices in the fields of flexible electronics, ultra-high sensitivity sensors, high frequency electronics, opto-electronics, energy sources and nano-electromechanical systems (NEMS). Proofs of concept of several high performance devices already exist, usually at the single device level, but there remain many serious scientific issues to be solved before the viability of such routes can be evaluated. In particular, the main concern regards the controlled synthesis and positioning of nanotubes. In our opinion, truly innovative use of these nano-objects will come from: (i) the combination of some of their complementary physical properties, such as combining their electrical and mechanical properties; (ii) the combination of their properties with additional benefits coming from other molecules grafted on the nanotubes (this route being particularly relevant for gas- and bio-sensors, opto-electronic devices and energy sources); and (iii) the use of chemically- or bio-directed self-assembly processes to allow the efficient combination of several devices into functional arrays or circuits. In this article, we review our recent results concerning nanotube chemistry and assembly and their use to develop electronic devices. In particular, we present carbon nanotube field effect transistors and their chemical optimization, high frequency nanotube transistors, nanotube-based opto-electronic devices with memory capabilities and nanotube-based nano-electromechanical systems (NEMS). The impact of chemical functionalization on the electronic properties of CNTs is analyzed on the basis of theoretical calculations. To cite this article: V. Derycke et al., C. R. Physique 10 (2009).

Power and stability limitations of resonant tunneling diodes

NASA Technical Reports Server (NTRS)

Kidner, C.; Mehdi, I.; East, J. R.; Haddad, G. I.

1990-01-01

Stability criteria for resonant tunneling diodes are investigated. Details of how extrinsic elements, such as series inductance and parallel capacitance, affect the stability are presented. A GaAs/AlAs/InGaAs/AlAs/GaAs double-barrier diode is investigated, showing the effect of different modes of low-frequency oscillation and the extrinsic circuit required for stabilization. The effect of device stabilization on high-frequency power generation is described. The main conclusions of the paper are: (1) stable resonant tunneling diode operation is difficult to obtain, and (2) the circuit and device conditions required for stable operation greatly reduce the amount of power that can be produced by these devices.

RFQ device for accelerating particles

DOEpatents

Shepard, Kenneth W.; Delayen, Jean R.

1995-01-01

A superconducting radio frequency quadrupole (RFQ) device includes four spaced elongated, linear, tubular rods disposed parallel to a charged particle beam axis, with each rod supported by two spaced tubular posts oriented radially with respect to the beam axis. The rod and post geometry of the device has four-fold rotation symmetry, lowers the frequency of the quadrupole mode below that of the dipole mode, and provides large dipole-quadrupole mode isolation to accommodate a range of mechanical tolerances. The simplicity of the geometry of the structure, which can be formed by joining eight simple T-sections, provides a high degree of mechanical stability, is insensitive to mechanical displacement, and is particularly adapted for fabrication with superconducting materials such as niobium.

Monolithically integrated quantum dot optical modulator with Semiconductor optical amplifier for short-range optical communications

NASA Astrophysics Data System (ADS)

Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

2015-04-01

A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed. Broadband QD optical gain material was used to achieve Gbps-order high-speed optical data transmission, and an optical gain change as high as approximately 6-7 dB was obtained with a low OGM voltage of 2.0 V. Loss of optical power due to insertion of the device was also effectively compensated for by the SOA section. Furthermore, it was confirmed that the QD-OGM/SOA device helped achieve 6.0-Gbps error-free optical data transmission over a 2.0-km-long photonic crystal fiber. We also successfully demonstrated generation of Gbps-order, high-speed, and error-free optical signals in the >5.5-THz broadband optical frequency bandwidth larger than the C-band. These results suggest that the developed monolithically integrated QD-OGM/SOA device will be an advantageous and compact means of increasing the usable optical frequency channels for short-reach communications.

Development of induction current acquisition device based on ARM

NASA Astrophysics Data System (ADS)

Ji, Yanju; Liu, Xiyang; Huang, Wanyu; Yao, Jiang; Yuan, Guiyang; Hui, Luan; Guan, Shanshan

2018-03-01

We design an induction current acquisition device based on ARM in order to realize high resolution and high sampling rate of acquisition for the induction current in wire-loop. Considering its characteristics of fast attenuation and small signal amplitude, we use the method of multi-path fusion for noise suppression. In the paper, the design is carried out from three aspects of analog circuit and device selection, independent power supply structure and the electromagnetic interference suppression of high frequency. DMA and ping-pong buffer, as a new data transmission technology, solves real time storage problem of massive data. The performance parameters of ARM acquisition device are tested. The comparison test of ARM acquisition device and cRIO acquisition device is performed at different time constants. The results show that it has 120dB dynamic range, 47kHz bandwidth, 96kHz sampling rate, 5μV the smallest resolution, and its average error value is not more than 4%, which proves the high accuracy and stability of the device.

Experimental investigation of 4 K pulse tube refrigerator

NASA Astrophysics Data System (ADS)

Gao, J. L.; Matsubara, Y.

During the last decades superconducting electronics has been the most prominent area of research for small scale applications of superconductivity. It has experienced quite a stormy development, from individual low frequency devices to devices with high integration density and pico second switching time. Nowadays it offers small losses, high speed and the potential for large scale integration and is superior to semiconducting devices in many ways — apart from the need for cooling by liquid helium for devices based on classical superconductors like niobium, or cooling by liquid nitrogen or cryocoolers (40K to 77K) for high-T c superconductors like YBa 2Cu 3O 7. This article gives a short overview over the current state of the art on typical devices out of the main application areas of superconducting electronics.

Three-dimensional magnetic cloak working from d.c. to 250 kHz

PubMed Central

Zhu, Jianfei; Jiang, Wei; Liu, Yichao; Yin, Ge; Yuan, Jun; He, Sailing; Ma, Yungui

2015-01-01

Invisible cloaking is one of the major outcomes of the metamaterial research, but the practical potential, in particular for high frequencies (for example, microwave to visible light), is fatally challenged by the complex material properties they usually demand. On the other hand, it will be advantageous and also technologically instrumental to design cloaking devices for applications at low frequencies where electromagnetic components are favourably uncoupled. In this work, we vastly develop the bilayer approach to create a three-dimensional magnetic cloak able to work in both static and dynamic fields. Under the quasi-static approximation, we demonstrate a perfect magnetic cloaking device with a large frequency band from 0 to 250 kHz. The practical potential of our device is experimentally verified by using a commercial metal detector, which may lead us to having a real cloaking application where the dynamic magnetic field can be manipulated in desired ways. PMID:26596641

Three-dimensional magnetic cloak working from d.c. to 250 kHz

NASA Astrophysics Data System (ADS)

Zhu, Jianfei; Jiang, Wei; Liu, Yichao; Yin, Ge; Yuan, Jun; He, Sailing; Ma, Yungui

2015-11-01

Invisible cloaking is one of the major outcomes of the metamaterial research, but the practical potential, in particular for high frequencies (for example, microwave to visible light), is fatally challenged by the complex material properties they usually demand. On the other hand, it will be advantageous and also technologically instrumental to design cloaking devices for applications at low frequencies where electromagnetic components are favourably uncoupled. In this work, we vastly develop the bilayer approach to create a three-dimensional magnetic cloak able to work in both static and dynamic fields. Under the quasi-static approximation, we demonstrate a perfect magnetic cloaking device with a large frequency band from 0 to 250 kHz. The practical potential of our device is experimentally verified by using a commercial metal detector, which may lead us to having a real cloaking application where the dynamic magnetic field can be manipulated in desired ways.

MM-wave cyclotron auto-resonance maser for plasma heating

NASA Astrophysics Data System (ADS)

Ceccuzzi, S.; Dattoli, G.; Di Palma, E.; Doria, A.; Gallerano, G. P.; Giovenale, E.; Mirizzi, F.; Spassovsky, I.; Ravera, G. L.; Surrenti, V.; Tuccillo, A. A.

2014-02-01

Heating and Current Drive systems are of outstanding relevance in fusion plasmas, magnetically confined in tokamak devices, as they provide the tools to reach, sustain and control burning conditions. Heating systems based on the electron cyclotron resonance (ECRH) have been extensively exploited on past and present machines DEMO, and the future reactor will require high frequencies. Therefore, high power (≥1MW) RF sources with output frequency in the 200 - 300 GHz range would be necessary. A promising source is the so called Cyclotron Auto-Resonance Maser (CARM). Preliminary results of the conceptual design of a CARM device for plasma heating, carried out at ENEA-Frascati will be presented together with the planned R&D development.

Micromachined silicon cantilevers with integrated high-frequency magnetoimpedance sensors for simultaneous strain and magnetic field detection

NASA Astrophysics Data System (ADS)

Buettel, G.; Joppich, J.; Hartmann, U.

2017-12-01

Giant magnetoimpedance (GMI) measurements in the high-frequency regime utilizing a coplanar waveguide with an integrated Permalloy multilayer and micromachined on a silicon cantilever are reported. The fabrication process is described in detail. The aspect ratio of the magnetic multilayer in the magnetoresistive and magnetostrictive device was varied. Tensile strain and compressive strain were applied. Vector network analyzer measurements in the range from the skin effect to ferromagnetic resonance confirm the technological potential of GMI-based micro-electro-mechanical devices for strain and magnetic field sensing applications. The strain-impedance gauge factor was quantified by finite element strain calculations and reaches a maximum value of almost 200.

SiGe:C Heterojunction Bipolar Transistors: From Materials Research to Chip Fabrication

NASA Astrophysics Data System (ADS)

Ruecker, H.; Heinemann, B.; Knoll, D.; Ehwald, K.-E.

Incorporation of substitutional carbon ( ~10^20 cm^-3) into the SiGe region of a heterojunction bipolar transistor (HBT) strongly reduces boron diffusion during device processing. We describe the physical mechanism behind the suppression of B diffusion in C-rich Si and SiGe, and explain how the increased thermal stability of doping profiles in SiGe:C HBTs can be used to improve device performance. Manufacturability of SiGe:C HBTs with transit frequencies of 100 GHz and maximum oscillation frequencies of 130 GHz is demonstrated in a BiCMOS technology capable of fabricating integrated circuits for radio frequencies with high yield.

Broadly tunable terahertz difference-frequency generation in quantum cascade lasers on silicon

NASA Astrophysics Data System (ADS)

Jung, Seungyong; Kim, Jae Hyun; Jiang, Yifan; Vijayraghavan, Karun; Belkin, Mikhail A.

2018-01-01

We report broadly tunable terahertz (THz) sources based on intracavity Cherenkov difference-frequency generation in quantum cascade lasers transfer-printed on high-resistivity silicon substrates. Spectral tuning from 1.3 to 4.3 THz was obtained from a 2-mm long laser chip using a modified Littrow external cavity setup. The THz power output and the midinfrared-to-THz conversion efficiency of the devices transferred on silicon are dramatically enhanced, compared with the devices on a native semi-insulating InP substrate. Enhancement is particularly significant at higher THz frequencies, where the tail of the Reststrahlen band results in a strong absorption of THz light in the InP substrate.

Microwave dynamics of high aspect ratio superconducting nanowires studied using self-resonance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Santavicca, Daniel F., E-mail: daniel.santavicca@unf.edu; Adams, Jesse K.; Grant, Lierd E.

2016-06-21

We study the microwave impedance of extremely high aspect ratio (length/width ≈ 5000) superconducting niobium nitride nanowires. The nanowires are fabricated in a compact meander geometry that is in series with the center conductor of a 50 Ω coplanar waveguide transmission line. The transmission coefficient of the sample is measured up to 20 GHz. At high frequency, a peak in the transmission coefficient is seen. Numerical simulations show that this is a half-wave resonance along the length of the nanowire, where the nanowire acts as a high impedance, slow wave transmission line. This resonance sets the upper frequency limit for these nanowires asmore » inductive elements. Fitting simulations to the measured resonance enables a precise determination of the nanowire's complex sheet impedance at the resonance frequency. The real part is a measure of dissipation, while the imaginary part is dominated by kinetic inductance. We characterize the dependence of the sheet resistance and sheet inductance on both temperature and current and compare the results to recent theoretical predictions for disordered superconductors. These results can aid in the understanding of high frequency devices based on superconducting nanowires. They may also lead to the development of novel superconducting devices such as ultra-compact resonators and slow-wave structures.« less

The Monitoring Case of Ground-Based Synthetic Aperture Radar with Frequency Modulated Continuous Wave System

NASA Astrophysics Data System (ADS)

Zhang, H. Y.; Zhai, Q. P.; Chen, L.; Liu, Y. J.; Zhou, K. Q.; Wang, Y. S.; Dou, Y. D.

2017-09-01

The features of the landslide geological disaster are wide distribution, variety, high frequency, high intensity, destructive and so on. It has become a natural disaster with harmful and wide range of influence. The technology of ground-based synthetic aperture radar is a novel deformation monitoring technology developed in recent years. The features of the technology are large monitoring area, high accuracy, long distance without contact and so on. In this paper, fast ground-based synthetic aperture radar (Fast-GBSAR) based on frequency modulated continuous wave (FMCW) system is used to collect the data of Ma Liuzui landslide in Chongqing. The device can reduce the atmospheric errors caused by rapidly changing environment. The landslide deformation can be monitored in severe weather conditions (for example, fog) by Fast-GBSAR with acquisition speed up to 5 seconds per time. The data of Ma Liuzui landslide in Chongqing are analyzed in this paper. The result verifies that the device can monitor landslide deformation under severe weather conditions.

Laser focus compensating sensing and imaging device

DOEpatents

Vann, Charles S.

1993-01-01

A laser focus compensating sensing and imaging device permits the focus of a single focal point of different frequency laser beams emanating from the same source point. In particular it allows the focusing of laser beam originating from the same laser device but having differing intensities so that a low intensity beam will not convert to a higher frequency when passing through a conversion crystal associated with the laser generating device. The laser focus compensating sensing and imaging device uses a cassegrain system to fold the lower frequency, low intensity beam back upon itself so that it will focus at the same focal point as a high intensity beam. An angular tilt compensating lens is mounted about the secondary mirror of the cassegrain system to assist in alignment. In addition cameras or CCD's are mounted with the primary mirror to sense the focused image. A convex lens is positioned co-axial with the cassegrain system on the side of the primary mirror distal of the secondary for use in aligning a target with the laser beam. A first alternate embodiment includes a cassegrain system using a series of shutters and an internally mounted dichroic mirror. A second alternate embodiment uses two laser focus compensating sensing and imaging devices for aligning a moving tool with a work piece.

Laser focus compensating sensing and imaging device

DOEpatents

Vann, C.S.

1993-08-31

A laser focus compensating sensing and imaging device permits the focus of a single focal point of different frequency laser beams emanating from the same source point. In particular it allows the focusing of laser beam originating from the same laser device but having differing intensities so that a low intensity beam will not convert to a higher frequency when passing through a conversion crystal associated with the laser generating device. The laser focus compensating sensing and imaging device uses a Cassegrain system to fold the lower frequency, low intensity beam back upon itself so that it will focus at the same focal point as a high intensity beam. An angular tilt compensating lens is mounted about the secondary mirror of the Cassegrain system to assist in alignment. In addition cameras or CCD's are mounted with the primary mirror to sense the focused image. A convex lens is positioned co-axial with the Cassegrain system on the side of the primary mirror distal of the secondary for use in aligning a target with the laser beam. A first alternate embodiment includes a Cassegrain system using a series of shutters and an internally mounted dichroic mirror. A second alternate embodiment uses two laser focus compensating sensing and imaging devices for aligning a moving tool with a work piece.

Inverse design of high-Q wave filters in two-dimensional phononic crystals by topology optimization.

PubMed

Dong, Hao-Wen; Wang, Yue-Sheng; Zhang, Chuanzeng

2017-04-01

Topology optimization of a waveguide-cavity structure in phononic crystals for designing narrow band filters under the given operating frequencies is presented in this paper. We show that it is possible to obtain an ultra-high-Q filter by only optimizing the cavity topology without introducing any other coupling medium. The optimized cavity with highly symmetric resonance can be utilized as the multi-channel filter, raising filter and T-splitter. In addition, most optimized high-Q filters have the Fano resonances near the resonant frequencies. Furthermore, our filter optimization based on the waveguide and cavity, and our simple illustration of a computational approach to wave control in phononic crystals can be extended and applied to design other acoustic devices or even opto-mechanical devices. Copyright © 2016 Elsevier B.V. All rights reserved.

Flexible, polymer gated, AC-driven organic electroluminescence devices

NASA Astrophysics Data System (ADS)

Xu, Junwei; Carroll, David L.

2017-08-01

Comparing rigid inorganic layer, polymeric semiconducting gate layer exhibits superior flexibility as well as efficient carrier manipulation in high frequency AC cycles. Mechanism of the carrier manipulation at the gate in forward and reversed bias of AC cycle is studied. The flexible PET-based AC-OEL device with poly[(9,9-bis(3'-((N,N-dimethyl)-Nethylammonium)- propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN-Br) gate shows a stable electroluminescent performance in frequency sweep with a color rendering index (CRI) over 81 at 2800K color temperature.

Holographic injection locking of a broad area laser diode via a photorefractive thin-film device.

PubMed

van Voorst, P D; de Wit, M R; Offerhaus, H L; Tay, S; Thomas, J; Peyghambarian, N; Boller, K-J

2007-12-24

We demonstrate locking of a high power broad area laser diode to a single frequency using holographic feedback from a photorefractive polymer thin-film device for the first time. A four-wave mixing setup is used to generate feedback for the broad area diode at the wavelength of the single frequency source (Ti:Sapphire laser) while the spatial distribution adapts to the preferred profile of the broad area diode. The result is an injection-locked broad area diode emitting with a linewidth comparable to the Ti:Sapphire laser.

Reliability of Cascaded THz Frequency Chains with Planar GaAs Circuits

NASA Technical Reports Server (NTRS)

Maiwald, Frank; Schlecht, Erich; Lin, Robert; Ward, John; Pearson, John; Siegel, Peter; Mehdi, Imran

2004-01-01

Planar GaAs Schottky diodes will be utilized for all of the LO chains on the HIPI instrument for the Herschel Space Observatory. A better understanding of device degradation mechanisms is desirable in order to specify environmental and operational conditions that do not reduce device life times. Failures and degradation associated with ESD (Electrostatic Discharge), high temperatures, DC currents and RF induced current and heating have been investigated. The goal is to establish a procedure to obtain the safe operating range for a given frequency multiplier.

Efficient quantum microwave-to-optical conversion using electro-optic nanophotonic coupled resonators

NASA Astrophysics Data System (ADS)

Soltani, Mohammad; Zhang, Mian; Ryan, Colm; Ribeill, Guilhem J.; Wang, Cheng; Loncar, Marko

2017-10-01

We propose a low-noise, triply resonant, electro-optic (EO) scheme for quantum microwave-to-optical conversion based on coupled nanophotonics resonators integrated with a superconducting qubit. Our optical system features a split resonance—a doublet—with a tunable frequency splitting that matches the microwave resonance frequency of the superconducting qubit. This is in contrast to conventional approaches, where large optical resonators with free-spectral range comparable to the qubit microwave frequency are used. In our system, EO mixing between the optical pump coupled into the low-frequency doublet mode and a resonance microwave photon results in an up-converted optical photon on resonance with high-frequency doublet mode. Importantly, the down-conversion process, which is the source of noise, is suppressed in our scheme as the coupled-resonator system does not support modes at that frequency. Our device has at least an order of magnitude smaller footprint than conventional devices, resulting in large overlap between optical and microwave fields and a large photon conversion rate (g /2 π ) in the range of ˜5 -15 kHz. Owing to a large g factor and doubly resonant nature of our device, microwave-to-optical frequency conversion can be achieved with optical pump powers in the range of tens of microwatts, even with moderate values for optical Q (˜106 ) and microwave Q (˜104 ). The performance metrics of our device, with substantial improvement over the previous EO-based approaches, promise a scalable quantum microwave-to-optical conversion and networking of superconducting processors via optical fiber communication.

Hearing risk associated with the usage of personal listening devices among urban high school students in Malaysia.

PubMed

Sulaiman, A H; Seluakumaran, K; Husain, R

2013-08-01

To investigate listening habits and hearing risks associated with the use of personal listening devices among urban high school students in Malaysia. Cross-sectional, descriptive study. In total, 177 personal listening device users (13-16 years old) were interviewed to elicit their listening habits (e.g. listening duration, volume setting) and symptoms of hearing loss. Their listening levels were also determined by asking them to set their usual listening volume on an Apple iPod TM playing a pre-selected song. The iPod's sound output was measured with an artificial ear connected to a sound level meter. Subjects also underwent pure tone audiometry to ascertain their hearing thresholds at standard frequencies (0.5-8 kHz) and extended high frequencies (9-16 kHz). The mean measured listening level and listening duration for all subjects were 72.2 dBA and 1.2 h/day, respectively. Their self-reported listening levels were highly correlated with the measured levels (P < 0.001). Subjects who listened at higher volumes also tend to listen for longer durations (P = 0.012). Male subjects listened at a significantly higher volume than female subjects (P = 0.008). When sound exposure levels were compared with the recommended occupational noise exposure limit, 4.5% of subjects were found to be listening at levels which require mandatory hearing protection in the occupational setting. Hearing loss (≥25 dB hearing level at one or more standard test frequencies) was detected in 7.3% of subjects. Subjects' sound exposure levels from the devices were positively correlated with their hearing thresholds at two of the extended high frequencies (11.2 and 14 kHz), which could indicate an early stage of noise-induced hearing loss. Although the average high school student listened at safe levels, a small percentage of listeners were exposed to harmful sound levels. Preventive measures are needed to avoid permanent hearing damage in high-risk listeners. Copyright © 2013 The Royal Society for Public Health. Published by Elsevier Ltd. All rights reserved.

Development of very small-diameter, inductively coupled magnetized plasma device

NASA Astrophysics Data System (ADS)

Kuwahara, D.; Mishio, A.; Nakagawa, T.; Shinohara, S.

2013-10-01

In order to miniaturize a high-density, inductively coupled magnetized plasma or helicon plasma to be applied to, e.g., an industrial application and an electric propulsion field, small helicon device has been developed. The specifications of this device along with the experimental results are described. We have succeeded in generating high-density (˜1019 m-3) plasmas using quartz tubes with very small diameters of 10 and 20 mm, with a radio frequency power ˜1200 and 700 W, respectively, in the presence of the magnetic field less than 1 kG.

Development of very small-diameter, inductively coupled magnetized plasma device.

PubMed

Kuwahara, D; Mishio, A; Nakagawa, T; Shinohara, S

2013-10-01

In order to miniaturize a high-density, inductively coupled magnetized plasma or helicon plasma to be applied to, e.g., an industrial application and an electric propulsion field, small helicon device has been developed. The specifications of this device along with the experimental results are described. We have succeeded in generating high-density (~10(19) m(-3)) plasmas using quartz tubes with very small diameters of 10 and 20 mm, with a radio frequency power ~1200 and 700 W, respectively, in the presence of the magnetic field less than 1 kG.

Superlattice structure modeling and simulation of High Electron Mobility Transistor for improved performance

NASA Astrophysics Data System (ADS)

Munusami, Ravindiran; Yakkala, Bhaskar Rao; Prabhakar, Shankar

2013-12-01

Magnetic tunnel junction were made by inserting the magnetic materials between the source, channel and the drain of the High Electron Mobility Transistor (HEMT) to enhance the performance. Material studio software package was used to design the superlattice layers. Different cases were analyzed to optimize the performance of the device by placing the magnetic material at different positions of the device. Simulation results based on conductivity reveals that the device has a very good electron transport due to the magnetic materials and will amplify very low frequency signals.

Acoustic signal recovery by thermal demodulation

NASA Astrophysics Data System (ADS)

Boullosa, R. R.; Santillán, Arturo O.

2006-10-01

One operating mode of recently developed thermoacoustic transducers is as an audio speaker that uses an input superimposed on a direct current; as a result, the audio signal occurs at the same frequency as the input signal. To extend the potential applications of these kinds of sources, the authors propose an alternative driving mode in which a simple thermoacoustic device, consisting of a metal film over a substrate and a heat sink, is excited with a high frequency sinusoid that is amplitude modulated by a lower frequency signal. They show that the modulating signal is recovered in the radiated waves due to a mechanism that is inherent to this type of thermoacoustic process. If the frequency of the carrier is higher than 30kHz and any modulating signal (the one of interest) is in the audio frequency range, only this signal will be heard. Thus, the thermoacoustic device operates as an audio-band, self-demodulating speaker.

Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gaskell, J.; Fromhold, T. M.; Greenaway, M. T.

We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable.

Ion trap device

DOEpatents

Ibrahim, Yehia M.; Smith, Richard D.

2016-01-26

An ion trap device is disclosed. The device includes a series of electrodes that define an ion flow path. A radio frequency (RF) field is applied to the series of electrodes such that each electrode is phase shifted approximately 180 degrees from an adjacent electrode. A DC voltage is superimposed with the RF field to create a DC gradient to drive ions in the direction of the gradient. A second RF field or DC voltage is applied to selectively trap and release the ions from the device. Further, the device may be gridless and utilized at high pressure.

Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics.

PubMed

Cheng, Rui; Jiang, Shan; Chen, Yu; Liu, Yuan; Weiss, Nathan; Cheng, Hung-Chieh; Wu, Hao; Huang, Yu; Duan, Xiangfeng

2014-10-08

Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. Here we report a systematic investigation of MoS2 transistors with optimized contact and device geometry, to achieve self-aligned devices with performance including an intrinsic gain over 30, an intrinsic cut-off frequency fT up to 42 GHz and a maximum oscillation frequency fMAX up to 50 GHz, exceeding the reported values for MoS2 transistors to date (fT~0.9 GHz, fMAX~1 GHz). Our results show that logic inverters or radio frequency amplifiers can be formed by integrating multiple MoS2 transistors on quartz or flexible substrates with voltage gain in the gigahertz regime. This study demonstrates the potential of two-dimensional layered semiconductors for high-speed flexible electronics.

Radio frequency analog electronics based on carbon nanotube transistors

PubMed Central

Kocabas, Coskun; Kim, Hoon-sik; Banks, Tony; Rogers, John A.; Pesetski, Aaron A.; Baumgardner, James E.; Krishnaswamy, S. V.; Zhang, Hong

2008-01-01

The potential to exploit single-walled carbon nanotubes (SWNTs) in advanced electronics represents a continuing, major source of interest in these materials. However, scalable integration of SWNTs into circuits is challenging because of difficulties in controlling the geometries, spatial positions, and electronic properties of individual tubes. We have implemented solutions to some of these challenges to yield radio frequency (RF) SWNT analog electronic devices, such as narrow band amplifiers operating in the VHF frequency band with power gains as high as 14 dB. As a demonstration, we fabricated nanotube transistor radios, in which SWNT devices provide all of the key functions, including resonant antennas, fixed RF amplifiers, RF mixers, and audio amplifiers. These results represent important first steps to practical implementation of SWNTs in high-speed analog circuits. Comparison studies indicate certain performance advantages over silicon and capabilities that complement those in existing compound semiconductor technologies. PMID:18227509

Fabrication and characterization of high current-density, submicron, NbN/MgO/NbN tunnel junctions

NASA Technical Reports Server (NTRS)

Stern, J. A.; Leduc, Henry G.; Judas, A. J.

1992-01-01

At near-millimeter wavelengths, heterodyne receivers based on SIS tunnel junctions are the most sensitive available. However, in order to scale these results to submillimeter wavelengths, certain device properties should be scaled. The tunnel-junction's current density should be increased to reduce the RC product. The device's area should be reduced to efficiently couple power from the antenna to the mixer. Finally, the superconductor used should have a large energy gap to minimize RF losses. Most SIS mixers use Nb or Pb-alloy tunnel junctions; the gap frequency for these materials is approximately 725 GHz. Above the gap frequency, these materials exhibit losses similar to those in a normal metal. The gap frequency in NbN films is as-large-as 1440 GHz. Therefore, we have developed a process to fabricate small area (down to 0.13 sq microns), high current density, NbN/MgO/NbN tunnel junctions.

Optomechanical terahertz detection with single meta-atom resonator.

PubMed

Belacel, Cherif; Todorov, Yanko; Barbieri, Stefano; Gacemi, Djamal; Favero, Ivan; Sirtori, Carlo

2017-11-17

Most of the common technologies for detecting terahertz photons (>1 THz) at room temperature rely on slow thermal devices. The realization of fast and sensitive detectors in this frequency range is indeed a notoriously difficult task. Here we propose a novel device consisting of a subwavelength terahertz meta-atom resonator, which integrates a nanomechanical element and allows energy exchange between the mechanical motion and the electromagnetic degrees of freedom. An incident terahertz wave thus produces a nanomechanical signal that can be read out optically with high precision. We exploit this concept to demonstrate a terahertz detector that operates at room temperature with high sensitivity and a much higher frequency response compared to standard detectors. Beyond the technological issue of terahertz detection, our architecture opens up new perspectives for fundamental science of light-matter interaction at terahertz frequencies, combining optomechanical approaches with semiconductor quantum heterostructures.

Raman Scattering in the Magnetized Semiconductor Plasma

NASA Astrophysics Data System (ADS)

Jankauskas, Zigmantas; Kvedaras, Vygaudas; Balevičius, Saulius

2005-04-01

Radio frequency (RF) magnetoplasmic waves known as helicons will propagate in solid-state plasmas when a strong magnetic field is applied. In our device the helicons were excited by RFs (the range 100-2000 MHz) much higher than the helicon generation frequency (the main peak at 20 MHz). The excitation of helicons in this case may be described by the effect similar to the Combination Scattering (Raman effect) when a part of the high RF wave energy that passes through the active material is absorbed and re-emitted by the magnetized solid-state plasma. It is expedient to call this experimental device a Helicon Maser (HRM) and the higher frequency e/m field - a pumping field. In full analogy with the usual Raman maser (or laser) the magnetized semiconductor sample plays the role of active material and the connecting cable - the role of high quality external resonator.

Raman Scattering in the Magnetized Semiconductor Plasma

NASA Astrophysics Data System (ADS)

Jankauskas, Zigmantas; Kvedaras, Vygaudas; Balevičius, Saulius

Radio frequency (RF) magnetoplasmic waves known as helicons will propagate in solid-state plasmas when a strong magnetic field is applied. In our device the helicons were excited by RFs (the range 100-2000 MHz) much higher than the helicon generation frequency (the main peak at 20 MHz). The excitation of helicons in this case may be described by the effect similar to the Combination Scattering (Raman effect) when a part of the high RF wave energy that passes through the active material is absorbed and re-emitted by the magnetized solid-state plasma. It is expedient to call this experimental device a Helicon Maser (HRM) and the higher frequency e/m field - a pumping field. In full analogy with the usual Raman maser (or laser) the magnetized semiconductor sample plays the role of active material and the connecting cable - the role of high quality external resonator.

Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

PubMed Central

Cheng, Rui; Jiang, Shan; Chen, Yu; Liu, Yuan; Weiss, Nathan; Cheng, Hung-Chieh; Wu, Hao; Huang, Yu; Duan, Xiangfeng

2014-01-01

Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. Here we report a systematic investigation of MoS2 transistors with optimized contact and device geometry, to achieve self-aligned devices with performance including an intrinsic gain over 30, an intrinsic cut-off frequency fT up to 42 GHz and a maximum oscillation frequency fMAX up to 50 GHz, exceeding the reported values for MoS2 transistors to date (fT ~ 0.9 GHz, fMAX ~ 1 GHz). Our results show that logic inverters or radio frequency amplifiers can be formed by integrating multiple MoS2 transistors on quartz or flexible substrates with voltage gain in the gigahertz regime. This study demonstrates the potential of two-dimensional layered semiconductors for high-speed flexible electronics. PMID:25295573

Light-weight low-frequency loudspeaker

NASA Astrophysics Data System (ADS)

Corsaro, Robert; Tressler, James

2002-05-01

In an aerospace application, we require a very low-mass sound generator with good performance at low audio frequencies (i.e., 30-400 Hz). A number of device configurations have been explored using various actuation technologies. Two particularly interesting devices have been developed, both using ``Thunder'' transducers (Face Intl. Corp.) as the actuation component. One of these devices has the advantage of high sound output but a complex phase spectrum, while the other has somewhat lower output but a highly uniform phase. The former is particularly novel in that the actuator is coupled to a flat, compliant diaphragm supported on the edges by an inflatable tube. This results in a radiating surface with very high modal complexity. Sound pressure levels measured in the far field (25 cm) using only 200-V peak drive (one-third or its rating) were nominally 74 6 dB over the band from 38 to 330 Hz. The second device essentially operates as a stiff low-mass piston, and is more suitable for our particular application, which is exploring the use of active controlled surface covers for reducing sound levels in payload fairing regions. [Work supported by NRL/ONR Smart Blanket program.

Micromechanical Devices to Reduce 1/f Noise in Magnetic Field and Electric Charge Sensors

NASA Astrophysics Data System (ADS)

Jaramillo, Gerardo

1/f noise is present in every aspect of nature. Sensors and read-out electronics have the ultimate detection limit set by the noise floor of the white noise. In order to increase signal-to-noise ratio (SNR) of low frequency signals buried by high 1/f noise, the signal can be up-converted to a high frequency signal that lies in the lower white noise regime of the sensing device. Mechanical modulation can be employed to move low frequency electronic signals to higher frequency region through the use of microresonators. This thesis has two goals: (1) develop and fabricate a hybrid micromechanical-magnetoresistive magnetic field sensor; and (2) design an electrometer to measure currents collected from air streams containing ionized nano-particles. First, we designed magnetoresistive-microelectromechanical systems (MR-MEMS) hybrid devices based on the monolithic integration of magnetic thin films and silicon-on-insulator (SOI) MEMS fabrication techniques. We used MgO-based magnetic tunnel junctions (MTJ) placed on a bulk micromachined silicon MEMS device to form a hybrid sensing device. The MEMS device was used to mechanically modulate the magnetic field signal detected by the MTJ, thereby reducing the effects of 1/f noise on the MTJ's output. Two actuator designs were investigated: cantilever and electrostatic comb-drive. The second component of the thesis presents a MEMS-based electrometer for the detection of small currents from ionized particles in a particle detection system for air-quality monitoring. One method of particle detection ionizes particles and then feeds a stream of charged particles into a Faraday cup electrometer. We replaced the Faraday cup with a filtering porous mesh sensing-electrode coupled to a MEMS electrometer with a noise floor below 1 fA rms. Experiments were conducted with fA level currents produced by 10 nm diameter particles within an airflow of 1.0 L/min. The MEMS electrometer was compared and calibrated using commercial electrometers and particle counters.

Broadband and high-efficiency vortex beam generator based on a hybrid helix array.

PubMed

Fang, Chaoqun; Wu, Chao; Gong, Zhijie; Zhao, Song; Sun, Anqi; Wei, Zeyong; Li, Hongqiang

2018-04-01

The vortex beam which carries the orbital angular momentum has versatile applications, such as high-resolution imaging, optical communications, and particle manipulation. Generating vortex beams with the Pancharatnam-Berry (PB) phase has drawn considerable attention for its unique spin-to-orbital conversion features. Despite the PB phase being frequency independent, an optical element with broadband high-efficiency circular polarization conversion feature is still needed for the broadband high-efficiency vortex beam generation. In this work, a broadband and high-efficiency vortex beam generator based on the PB phase is built with a hybrid helix array. Such devices can generate vortex beams with arbitrary topological charge. Moreover, vortex beams with opposite topological charge can be generated with an opposite handedness incident beam that propagates backward. The measured efficiency of our device is above 65% for a wide frequency range, with the relative bandwidth of 46.5%.

Viscous investigation of a flapping foil propulsor

NASA Astrophysics Data System (ADS)

Posri, Attapol; Phoemsapthawee, Surasak; Thaweewat, Nonthipat

2018-01-01

Inspired by how fishes propel themselves, a flapping-foil device is invented as an alternative propulsion system for ships and boats. The performance of such propulsor has been formerly investigated using a potential flow code. The simulation results have shown that the device has high propulsive efficiency over a wide range of operation. However, the potential flow gives good results only when flow separation is not present. In case of high flapping frequency, the flow separation can occur over a short instant due to fluid viscosity and high angle of attack. This may cause a reduction of propulsive efficiency. A commercial CFD code based on Lattice Boltzmann Method, XFlow, is then employed in order to investigate the viscous effect over the propulsive performance of the flapping foil. The viscous results agree well with the potential flow results, confirming the high efficiency of the propulsor. As expected, viscous results show lower efficiency in high flapping frequency zone.

Interference of GSM mobile phones with communication between Cardiac Rhythm Management devices and programmers: A combined in vivo and in vitro study.

PubMed

Huang, Dong; Dong, Zhi-Feng; Chen, Yan; Wang, Fa-Bin; Wei, Zhi; Zhao, Wen-Bin; Li, Shuai; Liu, Ming-Ya; Zhu, Wei; Wei, Meng; Li, Jing-Bo

2015-07-01

To investigate interference, and how to avoid it, by high-frequency electromagnetic fields (EMFs) of Global System for Mobile Communications (GSM) mobile phone with communication between cardiac rhythm management devices (CRMs) and programmers, a combined in vivo and in vitro testing was conducted. During in vivo testing, GSM mobile phones interfered with CRM-programmer communication in 33 of 65 subjects tested (50.8%). Losing ventricle sensing was representative in this study. In terms of clinical symptoms, only 4 subjects (0.6%) felt dizzy during testing. CRM-programmer communication recovered upon termination of mobile phone communication. During in vitro testing, electromagnetic interference by high-frequency (700-950 MHz) EMFs reproducibly occurred in duplicate testing in 18 of 20 CRMs (90%). During each interference, the pacing pulse signal on the programmer would suddenly disappear while the synchronous signal was normal on the amplifier-oscilloscope. Simulation analysis showed that interference by radiofrequency emitting devices with CRM-programmer communication may be attributed to factors including materials, excitation source distance, and implant depth. Results suggested that patients implanted with CRMs should not be restricted from using GSM mobile phones; however, CRMs should be kept away from high-frequency EMFs of GSM mobile phone during programming. © 2015 Wiley Periodicals, Inc.

Characterization of MgB2 Superconducting Hot Electron Bolometers

NASA Technical Reports Server (NTRS)

Cunnane, D.; Kawamura, J. H.; Wolak, M. A.; Acharya, N.; Tan, T.; Xi, X. X.; Karasik, B. S.

2014-01-01

Hot-Electron Bolometer (HEB) mixers have proven to be the best tool for high-resolution spectroscopy at the Terahertz frequencies. However, the current state of the art NbN mixers suffer from a small intermediate frequency (IF) bandwidth as well as a low operating temperature. MgB2 is a promising material for HEB mixer technology in view of its high critical temperature and fast thermal relaxation allowing for a large IF bandwidth. In this work, we have fabricated and characterized thin-film (approximately 15 nanometers) MgB2-based spiral antenna-coupled HEB mixers on SiC substrate. We achieved the IF bandwidth greater than 8 gigahertz at 25 degrees Kelvin and the device noise temperature less than 4000 degrees Kelvin at 9 degrees Kelvin using a 600 gigahertz source. Using temperature dependencies of the radiation power dissipated in the device we have identified the optical loss in the integrated microantenna responsible as a cause of the limited sensitivity of the current mixer devices. From the analysis of the current-voltage (IV) characteristics, we have derived the effective thermal conductance of the mixer device and estimated the required local oscillator power in an optimized device to be approximately 1 microwatts.

Validation of Heart Rate Monitor Polar RS800 for Heart Rate Variability Analysis During Exercise.

PubMed

Hernando, David; Garatachea, Nuria; Almeida, Rute; Casajús, Jose A; Bailón, Raquel

2018-03-01

Hernando, D, Garatachea, N, Almeida, R, Casajús, JA, and Bailón, R. Validation of heart rate monitor Polar RS800 for heart rate variability analysis during exercise. J Strength Cond Res 32(3): 716-725, 2018-Heart rate variability (HRV) analysis during exercise is an interesting noninvasive tool to measure the cardiovascular response to the stress of exercise. Wearable heart rate monitors are a comfortable option to measure interbeat (RR) intervals while doing physical activities. It is necessary to evaluate the agreement between HRV parameters derived from the RR series recorded by wearable devices and those derived from an electrocardiogram (ECG) during dynamic exercise of low to high intensity. Twenty-three male volunteers performed an exercise stress test on a cycle ergometer. Subjects wore a Polar RS800 device, whereas ECG was also recorded simultaneously to extract the reference RR intervals. A time-frequency spectral analysis was performed to extract the instantaneous mean heart rate (HRM), and the power of low-frequency (PLF) and high-frequency (PHF) components, the latter centered on the respiratory frequency. Analysis was done in intervals of different exercise intensity based on oxygen consumption. Linear correlation, reliability, and agreement were computed in each interval. The agreement between the RR series obtained from the Polar device and from the ECG is high throughout the whole test although the shorter the RR is, the more differences there are. Both methods are interchangeable when analyzing HRV at rest. At high exercise intensity, HRM and PLF still presented a high correlation (ρ > 0.8) and excellent reliability and agreement indices (above 0.9). However, the PHF measurements from the Polar showed reliability and agreement coefficients around 0.5 or lower when the level of the exercise increases (for levels of O2 above 60%).

Microfibrous metallic cloth for acoustic isolation of a MEMS gyroscope

NASA Astrophysics Data System (ADS)

Dean, Robert; Burch, Nesha; Black, Meagan; Beal, Aubrey; Flowers, George

2011-04-01

The response of a MEMS device that is exposed to a harsh environment may range from an increased noise floor to a completely erroneous output to temporary or even permanent device failure. One such harsh environment is high power acoustic energy possessing high frequency components. This type of environment sometimes occurs in small aerospace vehicles. In this type of operating environment, high frequency acoustic energy can be transferred to a MEMS gyroscope die through the device packaging. If the acoustic noise possesses a sufficiently strong component at the resonant frequency of the gyroscope, it will overexcite the motion of the proof mass, resulting in the deleterious effect of corrupted angular rate measurement. Therefore if the device or system packaging can be improved to sufficiently isolate the gyroscope die from environmental acoustic energy, the sensor may find new applications in this type of harsh environment. This research effort explored the use of microfibrous metallic cloth for isolating the gyroscope die from environmental acoustic excitation. Microfibrous cloth is a composite of fused, intermingled metal fibers and has a variety of typical uses involving chemical processing applications and filtering. Specifically, this research consisted of experimental evaluations of multiple layers of packed microfibrous cloth composed of sintered nickel material. The packed cloth was used to provide acoustic isolation for a test MEMS gyroscope, the Analog Devices ADXRS300. The results of this investigation revealed that the intermingling of the various fibers of the metallic cloth provided a significant contact area between the fiber strands and voids, which enhanced the acoustic damping of the material. As a result, the nickel cloth was discovered to be an effective acoustic isolation material for this particular MEMS gyroscope.

High-frequency polarization dynamics in spin-lasers: pushing the limits

NASA Astrophysics Data System (ADS)

Gerhardt, Nils C.; Lindemann, Markus; Pusch, Tobias; Michalzik, Rainer; Hofmann, Martin R.

2017-09-01

While the high-frequency performance of conventional lasers is limited by the coupled carrier-photon dynamics, spin-polarized lasers have a high potential to overcome this limitation and to push the direct modulation bandwidth beyond 100 GHz. The key is to utilize the ultrafast polarization dynamics in spin-polarized vertical cavity surface-emitting lasers (spin-VCSELs) which is decoupled from the intensity dynamics and its fundamental limitations. The polarization dynamics in such devices, characterized by the polarization oscillation resonance frequency, is mainly determined by the amount of birefringence in the cavity. Using an approach for manipulating the birefringence via mechanical strain we were able to increase the polarization dynamics to resonance frequencies of more than 40 GHz. Up to now these values are only limited by the setup to induce birefringence and do not reflect any fundamental limitations. Taking our record results for the birefringence-induced mode splitting of more than 250 GHz into account, the concept has the potential to provide polarization modulation in spin-VCSELs with modulation frequencies far beyond 100 GHz. This makes them ideal devices for next-generation fast optical interconnects. In this paper we present experimental results for ultrafast polarization dynamics up to 50 GHz and compare them to numerical simulations.

Underwater Wireless Sensor Communications in the 2.4 GHz ISM Frequency Band

PubMed Central

Lloret, Jaime; Sendra, Sandra; Ardid, Miguel; Rodrigues, Joel J. P. C.

2012-01-01

One of the main problems in underwater communications is the low data rate available due to the use of low frequencies. Moreover, there are many problems inherent to the medium such as reflections, refraction, energy dispersion, etc., that greatly degrade communication between devices. In some cases, wireless sensors must be placed quite close to each other in order to take more accurate measurements from the water while having high communication bandwidth. In these cases, while most researchers focus their efforts on increasing the data rate for low frequencies, we propose the use of the 2.4 GHz ISM frequency band in these special cases. In this paper, we show our wireless sensor node deployment and its performance obtained from a real scenario and measures taken for different frequencies, modulations and data transfer rates. The performed tests show the maximum distance between sensors, the number of lost packets and the average round trip time. Based on our measurements, we provide some experimental models of underwater communication in fresh water using EM waves in the 2.4 GHz ISM frequency band. Finally, we compare our communication system proposal with the existing systems. Although our proposal provides short communication distances, it provides high data transfer rates. It can be used for precision monitoring in applications such as contaminated ecosystems or for device communicate at high depth. PMID:22666029

A new vibrator to stimulate muscle proprioceptors in fMRI.

PubMed

Montant, Marie; Romaiguère, Patricia; Roll, Jean-Pierre

2009-03-01

Studying cognitive brain functions by functional magnetic resonance imaging (fMRI) requires appropriate stimulation devices that do not interfere with the magnetic fields. Since the emergence of fMRI in the 90s, a number of stimulation devices have been developed for the visual and auditory modalities. Only few devices, however, have been developed for the somesthesic modality. Here, we present a vibration device for studying somesthesia that is compatible with high magnetic field environments and that can be used in fMRI machines. This device consists of a poly vinyl chloride (PVC) vibrator containing a wind turbine and of a pneumatic apparatus that controls 1-6 vibrators simultaneously. Just like classical electromagnetic vibrators, our device stimulates muscle mechanoreceptors (muscle spindles) and generates reliable illusions of movement. We provide the fMRI compatibility data (phantom test), the calibration curve (vibration frequency as a function of air flow), as well as the results of a kinesthetic test (perceived speed of the illusory movement as a function of vibration frequency). This device was used successfully in several brain imaging studies using both fMRI and magnetoencephalography.

A Hybrid Circuit for Spoof Surface Plasmons and Spatial Waveguide Modes to Reach Controllable Band-Pass Filters

PubMed Central

Zhang, Qian; Zhang, Hao Chi; Wu, Han; Cui, Tie Jun

2015-01-01

We propose a hybrid circuit for spoof surface plasmon polaritons (SPPs) and spatial waveguide modes to develop new microwave devices. The hybrid circuit includes a spoof SPP waveguide made of two anti-symmetric corrugated metallic strips and a traditional substrate integrated waveguide (SIW). From dispersion relations, we show that the electromagnetic waves only can propagate through the hybrid circuit when the operating frequency is less than the cut-off frequency of the SPP waveguide and greater than the cut-off frequency of SIW, generating efficient band-pass filters. We demonstrate that the pass band is controllable in a large range by designing the geometrical parameters of SPP waveguide and SIW. Full-wave simulations are provided to show the large adjustability of filters, including ultra wideband and narrowband filters. We fabricate a sample of the new hybrid device in the microwave frequencies, and measurement results have excellent agreements to numerical simulations, demonstrating excellent filtering characteristics such as low loss, high efficiency, and good square ratio. The proposed hybrid circuit gives important potential to accelerate the development of plasmonic integrated functional devices and circuits in both microwave and terahertz frequencies. PMID:26552584

A Hybrid Circuit for Spoof Surface Plasmons and Spatial Waveguide Modes to Reach Controllable Band-Pass Filters.

PubMed

Zhang, Qian; Zhang, Hao Chi; Wu, Han; Cui, Tie Jun

2015-11-10

We propose a hybrid circuit for spoof surface plasmon polaritons (SPPs) and spatial waveguide modes to develop new microwave devices. The hybrid circuit includes a spoof SPP waveguide made of two anti-symmetric corrugated metallic strips and a traditional substrate integrated waveguide (SIW). From dispersion relations, we show that the electromagnetic waves only can propagate through the hybrid circuit when the operating frequency is less than the cut-off frequency of the SPP waveguide and greater than the cut-off frequency of SIW, generating efficient band-pass filters. We demonstrate that the pass band is controllable in a large range by designing the geometrical parameters of SPP waveguide and SIW. Full-wave simulations are provided to show the large adjustability of filters, including ultra wideband and narrowband filters. We fabricate a sample of the new hybrid device in the microwave frequencies, and measurement results have excellent agreements to numerical simulations, demonstrating excellent filtering characteristics such as low loss, high efficiency, and good square ratio. The proposed hybrid circuit gives important potential to accelerate the development of plasmonic integrated functional devices and circuits in both microwave and terahertz frequencies.

A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lamichhane, Ranjan; Ericson, Milton Nance; Frank, Steven Shane

2014-01-01

Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz tomore » 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.« less

High-Performance Power-Semiconductor Packages

NASA Technical Reports Server (NTRS)

Renz, David; Hansen, Irving; Berman, Albert

1989-01-01

A 600-V, 50-A transistor and 1,200-V, 50-A diode in rugged, compact, lightweight packages intended for use in inverter-type power supplies having switching frequencies up to 20 kHz. Packages provide low-inductance connections, low loss, electrical isolation, and long-life hermetic seal. Low inductance achieved by making all electrical connections to each package on same plane. Also reduces high-frequency losses by reducing coupling into inherent shorted turns in packaging material around conductor axes. Stranded internal power conductors aid conduction at high frequencies, where skin effect predominates. Design of packages solves historical problem of separation of electrical interface from thermal interface of high-power semiconductor device.

20-nm enhancement-mode metamorphic GaAs HEMT with highly doped InGaAs source/drain regions for high-frequency applications

NASA Astrophysics Data System (ADS)

Ajayan, J.; Nirmal, D.

2017-03-01

In this article, the DC and RF performance of a SiN passivated 20-nm gate length metamorphic high electron mobility transistor (MHEMT) on GaAs substrate with highly doped InGaAs source/drain (S/D) regions have investigated using the Synopsys TCAD tool. The 20-nm enhancement-mode (E-mode) MHEMT device also features δ-doped sheets on either side of the In0.53Ga0.47As/InAs/In0.53Ga0.47As channel which exhibits a transconductance of 3100 mS/mm, cut-off frequency (fT) of 740 GHz and a maximum oscillation frequency (fmax) of 1040 GHz. The threshold voltage of the device is found to be 0.07 V. The room temperature Hall mobilities of the 2-dimensional sheet charge density are measured to be over 12,600 cm2/Vs with a sheet charge density larger than 3.6 × 1012 cm-2. These high-performance E-mode MHEMTs are attractive candidates for sub-millimetre wave applications such as high-resolution radars for space research, remote atmospheric sensing, imaging systems and also for low noise wide bandwidth amplifier for future communication systems.

Highly efficient periodically poled KTP-isomorphs with large apertures and extreme domain aspect-ratios

NASA Astrophysics Data System (ADS)

Canalias, Carlota; Zukauskas, Andrius; Tjörnhamman, Staffan; Viotti, Anne-Lise; Pasiskevicius, Valdas; Laurell, Fredrik

2018-02-01

Since the early 1990's, a substantial effort has been devoted to the development of quasi-phased-matched (QPM) nonlinear devices, not only in ferroelectric oxides like LiNbO3, LiTaO3 and KTiOPO4 (KTP), but also in semiconductors as GaAs, and GaP. The technology to implement QPM structures in ferroelectric oxides has by now matured enough to satisfy the most basic frequency-conversion schemes without substantial modification of the poling procedures. Here, we present a qualitative leap in periodic poling techniques that allows us to demonstrate devices and frequency conversion schemes that were deemed unfeasible just a few years ago. Thanks to our short-pulse poling and coercive-field engineering techniques, we are able to demonstrate large aperture (5 mm) periodically poled Rb-doped KTP devices with a highly-uniform conversion efficiency over the whole aperture. These devices allow parametric conversion with energies larger than 60 mJ. Moreover, by employing our coercive-field engineering technique we fabricate highlyefficient sub-µm periodically poled devices, with periodicities as short as 500 nm, uniform over 1 mm-thick crystals, which allow us to realize mirrorless optical parametric oscillators with counter-propagating signal and idler waves. These novel devices present unique spectral and tuning properties, superior to those of conventional OPOs. Furthermore, our techniques are compatible with KTA, a KTP isomorph with extended transparency in the mid-IR range. We demonstrate that our highly-efficient PPKTA is superior both for mid-IR and for green light generation - as a result of improved transmission properties in the visible range. Our KTP-isomorph poling techniques leading to highly-efficient QPM devices will be presented. Their optical performance and attractive damage thresholds will be discussed.

Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance

DOEpatents

Zolper, John C.; Sherwin, Marc E.; Baca, Albert G.

2000-01-01

A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is formed and a single anneal at moderate temperature is then performed. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions co-implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region of the Si-channel tail, but does not contribute substantially to the acceptor concentration in the buried p region. As a result, the invention provides for improved field effect semiconductor and related devices with enhancement of both DC and high-frequency performance.

RFQ device for accelerating particles

DOEpatents

Shepard, K.W.; Delayen, J.R.

1995-06-06

A superconducting radio frequency quadrupole (RFQ) device includes four spaced elongated, linear, tubular rods disposed parallel to a charged particle beam axis, with each rod supported by two spaced tubular posts oriented radially with respect to the beam axis. The rod and post geometry of the device has four-fold rotation symmetry, lowers the frequency of the quadrupole mode below that of the dipole mode, and provides large dipole-quadrupole mode isolation to accommodate a range of mechanical tolerances. The simplicity of the geometry of the structure, which can be formed by joining eight simple T-sections, provides a high degree of mechanical stability, is insensitive to mechanical displacement, and is particularly adapted for fabrication with superconducting materials such as niobium. 5 figs.

Parametric Study of High Frequency Pulse Detonation Tubes

NASA Technical Reports Server (NTRS)

Cutler, Anderw D.

2008-01-01

This paper describes development of high frequency pulse detonation tubes similar to a small pulse detonation engine (PDE). A high-speed valve injects a charge of a mixture of fuel and air at rates of up to 1000 Hz into a constant area tube closed at one end. The reactants detonate in the tube and the products exit as a pulsed jet. High frequency pressure transducers are used to monitor the pressure fluctuations in the device and thrust is measured with a balance. The effects of injection frequency, fuel and air flow rates, tube length, and injection location are considered. Both H2 and C2H4 fuels are considered. Optimum (maximum specific thrust) fuel-air compositions and resonant frequencies are identified. Results are compared to PDE calculations. Design rules are postulated and applications to aerodynamic flow control and propulsion are discussed.

Widely Tunable On-Chip Microwave Circulator for Superconducting Quantum Circuits

NASA Astrophysics Data System (ADS)

Chapman, Benjamin J.; Rosenthal, Eric I.; Kerckhoff, Joseph; Moores, Bradley A.; Vale, Leila R.; Mates, J. A. B.; Hilton, Gene C.; Lalumière, Kevin; Blais, Alexandre; Lehnert, K. W.

2017-10-01

We report on the design and performance of an on-chip microwave circulator with a widely (GHz) tunable operation frequency. Nonreciprocity is created with a combination of frequency conversion and delay, and requires neither permanent magnets nor microwave bias tones, allowing on-chip integration with other superconducting circuits without the need for high-bandwidth control lines. Isolation in the device exceeds 20 dB over a bandwidth of tens of MHz, and its insertion loss is small, reaching as low as 0.9 dB at select operation frequencies. Furthermore, the device is linear with respect to input power for signal powers up to hundreds of fW (≈103 circulating photons), and the direction of circulation can be dynamically reconfigured. We demonstrate its operation at a selection of frequencies between 4 and 6 GHz.

Black Phosphorus Flexible Thin Film Transistors at Gighertz Frequencies.

PubMed

Zhu, Weinan; Park, Saungeun; Yogeesh, Maruthi N; McNicholas, Kyle M; Bank, Seth R; Akinwande, Deji

2016-04-13

Black phosphorus (BP) has attracted rapidly growing attention for high speed and low power nanoelectronics owing to its compelling combination of tunable bandgap (0.3 to 2 eV) and high carrier mobility (up to ∼1000 cm(2)/V·s) at room temperature. In this work, we report the first radio frequency (RF) flexible top-gated (TG) BP thin-film transistors on highly bendable polyimide substrate for GHz nanoelectronic applications. Enhanced p-type charge transport with low-field mobility ∼233 cm(2)/V·s and current density of ∼100 μA/μm at VDS = -2 V were obtained from flexible BP transistor at a channel length L = 0.5 μm. Importantly, with optimized dielectric coating for air-stability during microfabrication, flexible BP RF transistors afforded intrinsic maximum oscillation frequency fMAX ∼ 14.5 GHz and unity current gain cutoff frequency fT ∼ 17.5 GHz at a channel length of 0.5 μm. Notably, the experimental fT achieved here is at least 45% higher than prior results on rigid substrate, which is attributed to the improved air-stability of fabricated BP devices. In addition, the high-frequency performance was investigated through mechanical bending test up to ∼1.5% tensile strain, which is ultimately limited by the inorganic dielectric film rather than the 2D material. Comparison of BP RF devices to other 2D semiconductors clearly indicates that BP offers the highest saturation velocity, an important metric for high-speed and RF flexible nanosystems.

GaAs-based micro/nanomechanical resonators

NASA Astrophysics Data System (ADS)

Yamaguchi, Hiroshi

2017-10-01

Micro/nanomechanical resonators have been extensively studied both for device applications, such as high-performance sensors and high-frequency devices, and for fundamental science, such as quantum physics in macroscopic objects. The advantages of GaAs-based semiconductor heterostructures include improved mechanical properties through strain engineering, highly controllable piezoelectric transduction, carrier-mediated optomechanical coupling, and hybridization with quantum low-dimensional structures. This article reviews our recent activities, as well as those of other groups, on the physics and applications of mechanical resonators fabricated using GaAs-based heterostructures.

Nonlinear silicon photonics

NASA Astrophysics Data System (ADS)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Ultrahigh Frequency Nanomechanical Piezoresistive Amplifiers for Direct Channel-Selective Receiver Front-Ends.

PubMed

Ramezany, Alireza; Pourkamali, Siavash

2018-04-11

Channel-selective filtering and amplification in ultrahigh frequency (UHF) receiver front-ends are crucial for realization of cognitive radio systems and the future of wireless communication. In the past decade, there have been significant advances in the performance of microscale electromechanical resonant devices. However, such devices have not yet been able to meet the requirements for direct channel selection at RF. They also occupy a relatively large area on the chip making implementation of large arrays to cover several frequency bands challenging. On the other hand, electromechanical piezoresistive resonant devices are active devices that have recently shown the possibility of simultaneous signal amplification and channel-select filtering at lower frequencies. It has been theoretically predicted that if scaled down into the nanoscale, they can operate in the UHF range with a very low power consumption. Here, for the first time nanomechanical piezoresistive amplifiers with active element dimensions as small as 50 nm × 200 nm are demonstrated. With a device area of less than 1.5 μm 2 a piezoresistive amplifier operating at 730 MHz shows effective quality factor ( Q) of 89,000 for a 50Ω load and gains as high as 10 dB and Q of 330,000 for a 250Ω load while consuming 189 μW of power. On the basis of the measurement results, it is shown that for piezoresistor dimensions of 30 nm × 100 nm it is possible to get a similar performance at 2.4 GHz with device footprint of less than 0.2 μm 2 .

Nanoconstriction spin-Hall oscillator with perpendicular magnetic anisotropy

NASA Astrophysics Data System (ADS)

Divinskiy, B.; Demidov, V. E.; Kozhanov, A.; Rinkevich, A. B.; Demokritov, S. O.; Urazhdin, S.

2017-07-01

We experimentally study spin-Hall nano-oscillators based on [Co/Ni] multilayers with perpendicular magnetic anisotropy. We show that these devices exhibit single-frequency auto-oscillations at current densities comparable to those for in-plane magnetized oscillators. The demonstrated oscillators exhibit large magnetization precession amplitudes, and their oscillation frequency is highly tunable by the electric current. These features make them promising for applications in high-speed integrated microwave circuits.

Progress in CPI Microwave Tube Development

NASA Astrophysics Data System (ADS)

Wright, Edward L.; Bohlen, Heinz

2006-01-01

CPI continues its role as a leading supplier of state-of-the-art, high-power microwave tubes; from linear beam, velocity- and density-modulated devices, to high frequency gyro-devices. Klystrons are the device-of-choice for many high-power microwave applications, and can provide multi-megawatts to multi-kilowatts of power from UHF to W-band, respectively. A number of recent and on-going developments will be described. At UHF frequencies, the inductive output tube (IOT) has replaced the klystron for terrestrial NTSC and HDTV broadcast, due to its high efficiency and linearity, and is beginning to see use in scientific applications requiring 300 kW or less. Recent advances have enabled use well into L-band. CPI has developed a number of multiple-beam amplifiers. The VKL-8301 multiple-beam klystron (MBK) was built for the TESLA V/UV and x-ray FEL projects, and is a candidate RF source for the International Linear Collider (ILC). We have also contributed to the development of the U.S. Naval Research Laboratory (NRL) high-power fundamental-mode S-band MBK. The VHP-8330B multiple-beam, high-order mode (HOM) IOT shows great promise as a compact, CW UHF source for high power applications. These topics will be discussed, along with CPI's development capabilities for new and novel applications. Most important is our availability to provide design and fabrication services to organizations requiring CPI's manufacturing and process control infrastructure to build and test state-of-the-art devices.

SOI MESFETs on high-resistivity, trap-rich substrates

NASA Astrophysics Data System (ADS)

Mehr, Payam; Zhang, Xiong; Lepkowski, William; Li, Chaojiang; Thornton, Trevor J.

2018-04-01

The DC and RF characteristics of metal-semiconductor field-effect-transistors (MESFETs) on conventional CMOS silicon-on-insulator (SOI) substrates are compared to nominally identical devices on high-resistivity, trap-rich SOI substrates. While the DC transfer characteristics are statistically identical on either substrate, the maximum available gain at GHz frequencies is enhanced by ∼2 dB when using the trap-rich substrates, with maximum operating frequencies, fmax, that are approximately 5-10% higher. The increased fmax is explained by the reduced substrate conduction at GHz frequencies using a lumped-element, small-signal model.

Experimental demonstration of highly localized pulses (X waves) at microwave frequencies

NASA Astrophysics Data System (ADS)

Chiotellis, Nikolaos; Mendez, Victor; Rudolph, Scott M.; Grbic, Anthony

2018-02-01

A device that radiates transverse magnetic Bessel beams in the radiative near field is reported. The cone angle of the emitted radiation remains constant over a wide frequency range (18-30 GHz), allowing highly localized pulses (X waves) to be generated under a broadband excitation. The design process, based on ray optics, is discussed. Both frequency and time domain experimental results for a prototype are presented. The measured fields show close agreement with simulation results, and demonstrate the radiator's ability to emit X waves within its nondiffracting range.

High performance AlScN thin film based surface acoustic wave devices with large electromechanical coupling coefficient

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Wenbo; He, Xingli; Ye, Zhi, E-mail: yezhi@zju.edu.cn, E-mail: jl2@bolton.ac.uk

AlN and AlScN thin films with 27% scandium (Sc) were synthesized by DC magnetron sputtering deposition and used to fabricate surface acoustic wave (SAW) devices. Compared with AlN-based devices, the AlScN SAW devices exhibit much better transmission properties. Scandium doping results in electromechanical coupling coefficient, K{sup 2}, in the range of 2.0% ∼ 2.2% for a wide normalized thickness range, more than a 300% increase compared to that of AlN-based SAW devices, thus demonstrating the potential applications of AlScN in high frequency resonators, sensors, and high efficiency energy harvesting devices. The coupling coefficients of the present AlScN based SAW devices are muchmore » higher than that of the theoretical calculation based on some assumptions for AlScN piezoelectric material properties, implying there is a need for in-depth investigations on the material properties of AlScN.« less

Comparison of electroacupuncture frequency-related effects on heart rate variability in healthy volunteers: a randomized clinical trial.

PubMed

Lee, Jong-Ho; Kim, Kyu-Hyeong; Hong, Jin-Woo; Lee, Won-Chul; Koo, Sungtae

2011-06-01

This study aimed to compare the effects of high frequency electroacupuncture (EA) and low-frequency EA on the autonomic nervous system by using a heart rate variability measuring device in normal individuals. Fourteen participants were recruited and each participated in the high-frequency and low-frequency sessions (crossover design). The order of sessions was randomized and the interval between the two sessions was over 2 weeks. Participants received needle insertion with 120-Hz stimulation during the high-frequency session (high-frequency EA group), and with 2-Hz stimulation during the low-frequency session (low-frequency EA group). Acupuncture needles were directly inserted perpendicularly to LI 4 and LI 11 acupoints followed by delivery of electric pulses to these points for 15 minutes. Heart rate variability was measured 5 minutes before and after EA stimulation by a heart rate variability measuring system. We found a significant increase in the standard deviation of the normal-to-normal interval in the high-frequency EA group, with no change in the low-frequency EA group. Both the high-frequency and low-frequency EA groups showed no significant differences in other parameters including high-frequency power, low-frequency power, and the ratio of low-frequency power to high-frequency power. Based on these findings, we concluded that high-frequency EA stimulation is more effective than low-frequency EA stimulation in increasing autonomic nervous activity and there is no difference between the two EA frequencies in enhancing sympathovagal balance. Copyright © 2011 Korean Pharmacopuncture Institute. Published by .. All rights reserved.

Use of a Frequency Divider to Evaluate an SOI NAND Gate Device, Type CHT-7400, for Wide Temperature Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad

2010-01-01

Frequency dividers constitute essential elements in designing phase-locked loop circuits and microwave systems. In addition, they are used in providing required clocking signals to microprocessors and can be utilized as digital counters. In some applications, particularly space missions, electronics are often exposed to extreme temperature conditions. Therefore, it is required that circuits designed for such applications incorporate electronic parts and devices that can tolerate and operate efficiently in harsh temperature environments. While present electronic circuits employ COTS (commercial-off- the-shelf) parts that necessitate and are supported with some form of thermal control systems to maintain adequate temperature for proper operation, it is highly desirable and beneficial if the thermal conditioning elements are eliminated. Amongst these benefits are: simpler system design, reduced weight and size, improved reliability, simpler maintenance, and reduced cost. Devices based on silicon-on-insulator (SOI) technology, which utilizes the addition of an insulation layer in the device structure to reduce leakage currents and to minimize parasitic junctions, are well suited for high temperatures due to reduced internal heating as compared to the conventional silicon devices, and less power consumption. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a divide-by-two frequency divider circuit built using COTS SOI logic gates was evaluated over a wide temperature range and thermal cycling to determine suitability for use in space exploration missions and terrestrial fields under extreme temperature conditions.

Rectennas at optical frequencies: How to analyze the response

NASA Astrophysics Data System (ADS)

Joshi, Saumil; Moddel, Garret

2015-08-01

Optical rectennas, antenna-coupled diode rectifiers that receive optical-frequency electromagnetic radiation and convert it to DC output, have been proposed for use in harvesting electromagnetic radiation from a blackbody source. The operation of these devices is qualitatively different from that of lower-frequency rectennas, and their design requires a new approach. To that end, we present a method to determine the rectenna response to high frequency illumination. It combines classical circuit analysis with classical and quantum-based photon-assisted tunneling response of a high-speed diode. We demonstrate the method by calculating the rectenna response for low and high frequency monochromatic illumination, and for radiation from a blackbody source. Such a blackbody source can be a hot body generating waste heat, or radiation from the sun.

Deviations of frequency and the mode of vibration of commercially available whole-body vibration training devices.

PubMed

Kaeding, T S

2015-06-01

Research in the field of whole body vibration (WBV) training and the use of it in practice might be hindered by the fact that WBV training devices generate and transmit frequencies and/or modes of vibration which are different to preset adjustments. This research project shall clarify how exact WBV devices apply the by manufacturer information promised preset frequency and mode of vibration. Nine professional devices for WBV training were tested by means of a tri-axial accelerometer. The accelerations of each device were recorded under different settings with a tri-axial accelerometer. Beneath the measurement of different combinations of preset frequency and amplitude the repeatability across 3 successive measurements with the same preset conditions and one measurement under loaded condition were carried out. With 3 exceptions (both Board 3000 & srt medical PRO) we did not find noteworthy divergences between preset and actual applied frequencies. In these 3 devices we found divergences near -25%. Loading the devices did not affect the applied frequency or mode of vibration. There were no important divergences measurable for the applied frequency and mode of vibration regarding repeatability. The results of our measurements cannot be generalized as we only measured one respectively at most two devices of one model in terms of a random sample. Based on these results we strongly recommend that user in practice and research should analyse their WBV training devices regarding applied frequency and mode of vibration.

Frequency Combs in the XUV by Intra-Laser High Harmonic Generation for Ultra-Precise Measurements of the Fine Structure Constant

DTIC Science & Technology

2015-06-03

example, all atomic clocks for the European satellite -based global positioning system GALLILEO were manufactured in Neuchatel. With the integration...realization of numerous other exciting devices in various areas like advancement of sensors and nano- technological devices. Summary of Project...losses of the resonator . Achieving passive femtosecond pulse formation at these record-high power levels will require eliminating any destabilizing

Separation of density and viscosity influence on liquid-loaded surface acoustic wave devices

NASA Astrophysics Data System (ADS)

Herrmann, F.; Hahn, D.; Büttgenbach, S.

1999-05-01

Love-mode sensors are reported for separate measurement of liquid density and viscosity. They combine the general merits of Love-mode devices, e.g., ease of sensitivity adjustment and robustness, with a highly effective procedure of separate determination of liquid density and viscosity. A model is proposed to describe the frequency response of the devices to liquid loading. Moreover, design rules are given for further optimization and sensitivity enhancement.

In-situ, Gate Bias Dependent Study of Neutron Irradiation Effects on AlGaN/GaN HFETs

DTIC Science & Technology

2010-03-01

band gap and high breakdown field, AlGaN devices can operate at very high temperature and operating frequency. AlGaN/GaN based structures, have been...stable under ambient conditions [3]. GaN has a wide, direct band gap of 3.4 eV. It is therefore suitable for high temperature devices. Its high...also be grown with a wurtzite crystal structure and has a band - gap of 6.1 eV. Aluminum, due to having smaller atoms than gallium, forms a smaller

AC electrified jets in a flow-focusing device: Jet length scaling

PubMed Central

García-Sánchez, Pablo; Alzaga-Gimeno, Javier; Baret, Jean-Christophe

2016-01-01

We use a microfluidic flow-focusing device with integrated electrodes for controlling the production of water-in-oil drops. In a previous work, we reported that very long jets can be formed upon application of AC fields. We now study in detail the appearance of the long jets as a function of the electrical parameters, i.e., water conductivity, signal frequency, and voltage amplitude. For intermediate frequencies, we find a threshold voltage above which the jet length rapidly increases. Interestingly, this abrupt transition vanishes for high frequencies of the signal and the jet length grows smoothly with voltage. For frequencies below a threshold value, we previously reported a transition from a well-behaved uniform jet to highly unstable liquid structures in which axisymmetry is lost rather abruptly. These liquid filaments eventually break into droplets of different sizes. In this work, we characterize this transition with a diagram as a function of voltage and liquid conductivity. The electrical response of the long jets was studied via a distributed element circuit model. The model allows us to estimate the electric potential at the tip of the jet revealing that, for any combination of the electrical parameters, the breakup of the jet occurs at a critical value of this potential. We show that this voltage is around 550 V for our device geometry and choice of flow rates. PMID:27375826

AC electrified jets in a flow-focusing device: Jet length scaling.

PubMed

Castro-Hernández, Elena; García-Sánchez, Pablo; Alzaga-Gimeno, Javier; Tan, Say Hwa; Baret, Jean-Christophe; Ramos, Antonio

2016-07-01

We use a microfluidic flow-focusing device with integrated electrodes for controlling the production of water-in-oil drops. In a previous work, we reported that very long jets can be formed upon application of AC fields. We now study in detail the appearance of the long jets as a function of the electrical parameters, i.e., water conductivity, signal frequency, and voltage amplitude. For intermediate frequencies, we find a threshold voltage above which the jet length rapidly increases. Interestingly, this abrupt transition vanishes for high frequencies of the signal and the jet length grows smoothly with voltage. For frequencies below a threshold value, we previously reported a transition from a well-behaved uniform jet to highly unstable liquid structures in which axisymmetry is lost rather abruptly. These liquid filaments eventually break into droplets of different sizes. In this work, we characterize this transition with a diagram as a function of voltage and liquid conductivity. The electrical response of the long jets was studied via a distributed element circuit model. The model allows us to estimate the electric potential at the tip of the jet revealing that, for any combination of the electrical parameters, the breakup of the jet occurs at a critical value of this potential. We show that this voltage is around 550 V for our device geometry and choice of flow rates.

Over-the-Counter Hearing Aids: A Lost Decade for Change

PubMed Central

Chan, Zoe Yee Ting; McPherson, Bradley

2015-01-01

Background. Hearing aids sold directly to consumers in retail stores or through the internet, without individual prescription by audiological professionals, are termed over-the-counter (OTC) devices. This study aimed to determine whether there was any change in the electroacoustic characteristics of OTC devices compared to research carried out a decade earlier. The previous results indicated that most OTC devices were low-frequency-emphasis devices and were unsuitable for elderly people with presbycusis, who were likely to be the major consumers of these products. Methods. Ten OTC devices were selected and their electroacoustic performance was measured. Appropriate clients for the OTC devices were derived, using four linear prescription formulae, and OTC suitability for elderly persons with presbycusis was investigated. Results. OTC electroacoustic characteristics were similar to those in the earlier study. Most OTC devices were not acoustically appropriate for potential consumers with presbycusis. Although several of the devices could match prescriptive targets for individuals with presbycusis, their poor electroacoustic performance—including ineffective volume control function, high equivalent input noise, and irregular frequency response—may override their potential benefit. Conclusion. The low-cost OTC devices were generally not suitable for the main consumers of these products, and there has been little improvement in the appropriateness of these devices over the past decade. PMID:26557701

High-speed wavefront control using MEMS micromirrors

NASA Astrophysics Data System (ADS)

Bifano, T. G.; Stewart, J. B.

2005-08-01

Over the past decade, a number of electrostatically-actuated MEMS deformable mirror devices have been used for adaptive control in beam-forming and imaging applications. One architecture that has been widely used is the silicon device developed by Boston University, consisting of a continuous or segmented mirror supported by post attachments to an array of parallel plate electrostatic actuators. MEMS deformable mirrors and segmented mirrors with up to 1024 of these actuators have been used in open loop and closed loop control systems to control wavefront errors. Frame rates as high as 11kHz have been demonstrated. Mechanically, the actuators used in this device exhibit a first-mode resonant frequency that is in the range of many tens of kilohertz up to a few hundred kilohertz. Viscous air damping has been found to limit operation at such high frequencies in air at standard pressure. Some applications in high-speed tracking and beam-forming could benefit from increased speed. In this paper, several approaches to achieving critically-damped performance with such MEMS DMs are detailed, and theoretical and experimental results are presented. One approach is to seal the MEMS DM in a full or partial vacuum environment, thereby affecting air damping. After vacuum sealing the device's predicted resonant behavior at tens of kilohertz was observed. In vacuum, the actuator's intrinsic material damping is quite small, resulting in considerable oscillation in step response. To alleviate this problem, a two-step actuation algorithm was employed. Precise control of a single actuator frequencies up to 100kHz without overshoot was demonstrated using this approach. Another approach to increasing actuation speed was to design actuators that reduce air damping effects. This is also demonstrated in the paper.

Effect of 100 MeV Si7+ ions' irradiation on Pd/n-GaAs Schottky diodes

NASA Astrophysics Data System (ADS)

Sinha, O. P.

2017-12-01

Pd/n-GaAs realized devices (junction made on a virgin substrate prior to irradiation) and Pd/n-GaAs fabricated devices (junction realized after the virgin substrate irradiation) have been irradiated with 100 MeV Si7+ ions for the varying fluence of 1012-1013 ions/cm2. The devices have been characterized by I-V and C-V techniques for an electrical response. The electrical characterization of these devices shows the presence of interfacial layer. Moreover, the C-V characteristics show strong frequency dependence behavior, which indicates the involvement of interfacial charge layer with deep electron states. The hydrogenation of these devices has not caused any significant change in the electrical (I-V and C-V) characteristics. The observed results have been discussed in the realm of radiation-induced defects, which cause the carrier removal and compensation phenomena to cause the observed high resistivity and filling and unfilling of these traps' level to cause strong frequency dependence behavior.

Terahertz Detection and Imaging Using Graphene Ballistic Rectifiers.

PubMed

Auton, Gregory; But, Dmytro B; Zhang, Jiawei; Hill, Ernie; Coquillat, Dominique; Consejo, Christophe; Nouvel, Philippe; Knap, Wojciech; Varani, Luca; Teppe, Frederic; Torres, Jeremie; Song, Aimin

2017-11-08

A graphene ballistic rectifier is used in conjunction with an antenna to demonstrate a rectenna as a terahertz (THz) detector. A small-area (<1 μm 2 ) local gate is used to adjust the Fermi level in the device to optimize the output while minimizing the impact on the cutoff frequency. The device operates in both n- and p-type transport regimes and shows a peak extrinsic responsivity of 764 V/W and a corresponding noise equivalent power of 34 pW Hz -1/2 at room temperature with no indications of a cutoff frequency up to 0.45 THz. The device also demonstrates a linear response for more than 3 orders of magnitude of input power due to its zero threshold voltage, quadratic current-voltage characteristics and high saturation current. Finally, the device is used to take an image of an optically opaque object at 0.685 THz, demonstrating potential in both medical and security imaging applications.

A closed-loop phase-locked interferometer for wide bandwidth position sensing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fleming, Andrew J., E-mail: Andrew.Fleming@Newcastle.edu.au; Routley, Ben S., E-mail: Ben.Routley@Newcastle.edu.au

This article describes a position sensitive interferometer with closed-loop control of the reference mirror. A calibrated nanopositioner is used to lock the interferometer phase to the most sensitive point in the interferogram. In this configuration, large low-frequency movements of the sensor mirror can be detected from the control signal applied to the nanopositioner and high-frequency short-range signals can be measured directly from the photodiode. It is demonstrated that these two signals are complementary and can be summed to find the total displacement. The resulting interferometer has a number of desirable characteristics: it is optically simple, does not require polarization ormore » modulation to detect the direction of motion, does not require fringe-counting or interpolation electronics, and has a bandwidth equal to that of the photodiode. Experimental results demonstrate the frequency response analysis of a high-speed positioning stage. The proposed instrument is ideal for measuring the frequency response of nanopositioners, electro-optical components, MEMs devices, ultrasonic devices, and sensors such as surface acoustic wave detectors.« less

Zero-static power radio-frequency switches based on MoS2 atomristors.

PubMed

Kim, Myungsoo; Ge, Ruijing; Wu, Xiaohan; Lan, Xing; Tice, Jesse; Lee, Jack C; Akinwande, Deji

2018-06-28

Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10 Ω are achievable, making MoS 2 atomristors suitable as energy-efficient radio-frequency (RF) switches. MoS 2 RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches. Furthermore, MoS 2 switches are fully electronic and can be integrated on arbitrary substrates unlike phase-change RF switches. High-frequency results reveal that a key figure of merit, the cutoff frequency (f c ), is about 10 THz for sub-μm 2 switches with favorable scaling that can afford f c above 100 THz for nanoscale devices, exceeding the performance of contemporary switches that suffer from an area-invariant scaling. These results indicate a new electronic application of TMDs as non-volatile switches for communication platforms, including mobile systems, low-power internet-of-things, and THz beam steering.

A new method of radio frequency links by coplanar coils for implantable medical devices.

PubMed

Xue, L; Hao, H W; Li, L; Ma, B Z

2005-01-01

A new method based on coplanar coils for the design of radio frequency links has been developed, to realize the communication between the programming wand and the implantable medical devices with shielding container simply and reliably. With the analysis of electronic and magnetic field theory, the communication model has been established and simulated, and the circuit has been designed and tested. The experimental results are consistent with the simulation fairly well. The voltage transfer ratio of the typical circuit with present parameters can reach as high as 0.02, which can fulfill the requirements of communication.

Issues in vibration energy harvesting

NASA Astrophysics Data System (ADS)

Zhang, Hui; Corr, Lawrence R.; Ma, Tianwei

2018-05-01

In this study, fundamental issues related to bandwidth and nonlinear resonance in vibrational energy harvesting devices are investigated. The results show that using bandwidth as a criterion to measure device performance can be misleading. For a linear device, an enlarged bandwidth is achieved at the cost of sacrificing device performance near resonance, and thus widening the bandwidth may offer benefits only when the natural frequency of the linear device cannot match the dominant excitation frequency. For a nonlinear device, since the principle of superposition does not apply, the ''broadband" performance improvements achieved for single-frequency excitations may not be achievable for multi-frequency excitations. It is also shown that a large-amplitude response based on the traditional ''nonlinear resonance" does not always result in the optimal performance for a nonlinear device because of the negative work done by the excitation, which indicates energy is returned back to the excitation. Such undesired negative work is eliminated at global resonance, a generalized resonant condition for both linear and nonlinear systems. While the linear resonance is a special case of global resonance for a single-frequency excitation, the maximum potential of nonlinear energy harvesting can be reached for multi-frequency excitations by using global resonance to simultaneously harvest energy distributed over multiple frequencies.

Inducer Hydrodynamic Load Measurement Devices

NASA Technical Reports Server (NTRS)

Skelley, Stephen E.; Zoladz, Thomas F.

2002-01-01

Marshall Space Flight Center (MSFC) has demonstrated two measurement devices for sensing and resolving the hydrodynamic loads on fluid machinery. The first - a derivative of the six component wind tunnel balance - senses the forces and moments on the rotating device through a weakened shaft section instrumented with a series of strain gauges. This "rotating balance" was designed to directly measure the steady and unsteady hydrodynamic loads on an inducer, thereby defining both the amplitude and frequency content associated with operating in various cavitation modes. The second device - a high frequency response pressure transducer surface mounted on a rotating component - was merely an extension of existing technology for application in water. MSFC has recently completed experimental evaluations of both the rotating balance and surface-mount transducers in a water test loop. The measurement bandwidth of the rotating balance was severely limited by the relative flexibility of the device itself, resulting in an unexpectedly low structural bending mode and invalidating the higher frequency response data. Despite these limitations, measurements confirmed that the integrated loads on the four-bladed inducer respond to both cavitation intensity and cavitation phenomena. Likewise, the surface-mount pressure transducers were subjected to a range of temperatures and flow conditions in a non-rotating environment to record bias shifts and transfer functions between the transducers and a reference device. The pressure transducer static performance was within manufacturer's specifications and dynamic response accurately followed that of the reference.

Inducer Hydrodynamic Load Measurement Devices

NASA Technical Reports Server (NTRS)

Skelley, Stephen E.; Zoladz, Thomas F.; Turner, Jim (Technical Monitor)

2002-01-01

Marshall Space Flight Center (MSFC) has demonstrated two measurement devices for sensing and resolving the hydrodynamic loads on fluid machinery. The first - a derivative of the six-component wind tunnel balance - senses the forces and moments on the rotating device through a weakened shaft section instrumented with a series of strain gauges. This rotating balance was designed to directly measure the steady and unsteady hydrodynamic loads on an inducer, thereby defining both the amplitude and frequency content associated with operating in various cavitation modes. The second device - a high frequency response pressure transducer surface mounted on a rotating component - was merely an extension of existing technology for application in water. MSFC has recently completed experimental evaluations of both the rotating balance and surface-mount transducers in a water test loop. The measurement bandwidth of the rotating balance was severely limited by the relative flexibility of the device itself, resulting in an unexpectedly low structural bending mode and invalidating the higher-frequency response data. Despite these limitations, measurements confirmed that the integrated loads on the four-bladed inducer respond to both cavitation intensity and cavitation phenomena. Likewise, the surface-mount pressure transducers were subjected to a range of temperatures and flow conditions in a non-rotating environment to record bias shifts and transfer functions between the transducers and a reference device. The pressure transducer static performance was within manufacturer's specifications and dynamic response accurately followed that of the reference.

Viscoelastic properties of a spinal posterior dynamic stabilisation device.

PubMed

Lawless, Bernard M; Barnes, Spencer C; Espino, Daniel M; Shepherd, Duncan E T

2016-06-01

The purpose of this study was to quantify the frequency dependent viscoelastic properties of two types of spinal posterior dynamic stabilisation devices. In air at 37°C, the viscoelastic properties of six BDyn 1 level, six BDyn 2 level posterior dynamic stabilisation devices (S14 Implants, Pessac, France) and its elastomeric components (polycarbonate urethane and silicone) were measured using Dynamic Mechanical Analysis. The viscoelastic properties were measured over the frequency range 0.01-30Hz. The BDyn devices and its components were viscoelastic throughout the frequency range tested. The mean storage stiffness and mean loss stiffness of the BDyn 1 level device, BDyn 2 level device, silicone component and polycarbonate urethane component all presented a logarithmic relationship with respect to frequency. The storage stiffness of the BDyn 1 level device ranged from 95.56N/mm to 119.29N/mm, while the BDyn 2 level storage stiffness ranged from 39.41N/mm to 42.82N/mm. BDyn 1 level device and BDyn 2 level device loss stiffness ranged from 10.72N/mm to 23.42N/mm and 4.26N/mm to 9.57N/mm, respectively. No resonant frequencies were recorded for the devices or its components. The elastic property of BDyn 1 level device is influenced by the PCU and silicone components, in the physiological frequency range. The viscoelastic properties calculated in this study may be compared to spinal devices and spinal structures. Copyright © 2016 Elsevier Ltd. All rights reserved.

DC and analog/RF performance optimisation of source pocket dual work function TFET

NASA Astrophysics Data System (ADS)

Raad, Bhagwan Ram; Sharma, Dheeraj; Kondekar, Pravin; Nigam, Kaushal; Baronia, Sagar

2017-12-01

We investigate a systematic study of source pocket tunnel field-effect transistor (SP TFET) with dual work function of single gate material by using uniform and Gaussian doping profile in the drain region for ultra-low power high frequency high speed applications. For this, a n+ doped region is created near the source/channel junction to decrease the depletion width results in improvement of ON-state current. However, the dual work function of the double gate is used for enhancement of the device performance in terms of DC and analog/RF parameters. Further, to improve the high frequency performance of the device, Gaussian doping profile is considered in the drain region with different characteristic lengths which decreases the gate to drain capacitance and leads to drastic improvement in analog/RF figures of merit. Furthermore, the optimisation is performed with different concentrations for uniform and Gaussian drain doping profile and for various sectional length of lower work function of the gate electrode. Finally, the effect of temperature variation on the device performance is demonstrated.

Fully kinetic simulations of dense plasma focus Z-pinch devices.

PubMed

Schmidt, A; Tang, V; Welch, D

2012-11-16

Dense plasma focus Z-pinch devices are sources of copious high energy electrons and ions, x rays, and neutrons. The mechanisms through which these physically simple devices generate such high-energy beams in a relatively short distance are not fully understood. We now have, for the first time, demonstrated a capability to model these plasmas fully kinetically, allowing us to simulate the pinch process at the particle scale. We present here the results of the initial kinetic simulations, which reproduce experimental neutron yields (~10(7)) and high-energy (MeV) beams for the first time. We compare our fluid, hybrid (kinetic ions and fluid electrons), and fully kinetic simulations. Fluid simulations predict no neutrons and do not allow for nonthermal ions, while hybrid simulations underpredict neutron yield by ~100x and exhibit an ion tail that does not exceed 200 keV. Only fully kinetic simulations predict MeV-energy ions and experimental neutron yields. A frequency analysis in a fully kinetic simulation shows plasma fluctuations near the lower hybrid frequency, possibly implicating lower hybrid drift instability as a contributor to anomalous resistivity in the plasma.

Portable Wireless LAN Device and Two-way Radio Threat Assessment for Aircraft Navigation Radios

NASA Technical Reports Server (NTRS)

Nguyen, Truong X.; Koppen, Sandra V.; Ely, Jay J.; Williams, Reuben A.; Smith, Laura J.; Salud, Maria Theresa P.

2003-01-01

Measurement processes, data and analysis are provided to address the concern for Wireless Local Area Network devices and two-way radios to cause electromagnetic interference to aircraft navigation radio systems. A radiated emission measurement process is developed and spurious radiated emissions from various devices are characterized using reverberation chambers. Spurious radiated emissions in aircraft radio frequency bands from several wireless network devices are compared with baseline emissions from standard computer laptops and personal digital assistants. In addition, spurious radiated emission data in aircraft radio frequency bands from seven pairs of two-way radios are provided, A description of the measurement process, device modes of operation and the measurement results are reported. Aircraft interference path loss measurements were conducted on four Boeing 747 and Boeing 737 aircraft for several aircraft radio systems. The measurement approach is described and the path loss results are compared with existing data from reference documents, standards, and NASA partnerships. In-band on-channel interference thresholds are compiled from an existing reference document. Using these data, a risk assessment is provided for interference from wireless network devices and two-way radios to aircraft systems, including Localizer, Glideslope, Very High Frequency Omnidirectional Range, Microwave Landing System and Global Positioning System. The report compares the interference risks associated with emissions from wireless network devices and two-way radios against standard laptops and personal digital assistants. Existing receiver interference threshold references are identified as to require more data for better interference risk assessments.

High-frequency self-aligned graphene transistors with transferred gate stacks.

PubMed

Cheng, Rui; Bai, Jingwei; Liao, Lei; Zhou, Hailong; Chen, Yu; Liu, Lixin; Lin, Yung-Chen; Jiang, Shan; Huang, Yu; Duan, Xiangfeng

2012-07-17

Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on a sacrificial substrate, and then transferred onto arbitrary substrates with graphene on top. A self-aligned process, enabled by the unique structure of the transferred gate stacks, is then used to position precisely the source and drain electrodes with minimized access resistance or parasitic capacitance. This process has therefore enabled scalable fabrication of self-aligned graphene transistors with unprecedented performance including a record-high cutoff frequency up to 427 GHz. Our study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra-high-frequency circuits.

Study for Identification of Beneficial Uses of Space (BUS). Volume 2: Technical report. Book 4: Development and business analysis of space processed surface acoustic wave devices

NASA Technical Reports Server (NTRS)

1975-01-01

Preliminary development plans, analysis of required R and D and production resources, the costs of such resources, and, finally, the potential profitability of a commercial space processing opportunity for the production of very high frequency surface acoustic wave devices are presented.

Semiconductor nanomembrane-based sensors for high frequency pressure measurements

NASA Astrophysics Data System (ADS)

Ruan, Hang; Kang, Yuhong; Homer, Michelle; Claus, Richard O.; Mayo, David; Sibold, Ridge; Jones, Tyler; Ng, Wing

2017-04-01

This paper demonstrates improvements on semiconductor nanomembrane based high frequency pressure sensors that utilize silicon on insulator techniques in combination with nanocomposite materials. The low-modulus, conformal nanomembrane sensor skins with integrated interconnect elements and electronic devices could be applied to vehicles or wind tunnel models for full spectrum pressure analysis. Experimental data demonstrates that: 1) silicon nanomembrane may be used as single pressure sensor transducers and elements in sensor arrays, 2) the arrays may be instrumented to map pressure over the surfaces of test articles over a range of Reynolds numbers, temperature and other environmental conditions, 3) in the high frequency range, the sensor is comparable to the commercial high frequency sensor, and 4) in the low frequency range, the sensor is much better than the commercial sensor. This supports the claim that nanomembrane pressure sensors may be used for wide bandwidth flow analysis.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pickett, Lyle; Manin, Julien; Eagle, Ethan

A Sandia National Laboratories' light emitting diode (LED) driver is generating light pulses with shorter duration higher repetition frequency and higher brightness than anything on the market. The Sandia LED Pulser uses custom electronic circuitry to drive high-power LEDs to generate short, bright, high frequency light pulses. A single device can emit up to four different colors - each with independent pulse timing - crucial for light-beam forming in many optical applications and is more economical than current light sources such as lasers.

Device and method for imaging of non-linear and linear properties of formations surrounding a borehole

DOEpatents

Johnson, Paul A; Tencate, James A; Le Bas, Pierre-Yves; Guyer, Robert; Vu, Cung Khac; Skelt, Christopher

2013-11-05

In some aspects of the disclosure, a method and an apparatus is disclosed for investigating material surrounding the borehole. The method includes generating a first low frequency acoustic wave within the borehole, wherein the first low frequency acoustic wave induces a linear and a nonlinear response in one or more features in the material that are substantially perpendicular to a radius of the borehole; directing a first sequence of high frequency pulses in a direction perpendicularly with respect to the longitudinal axis of the borehole into the material contemporaneously with the first acoustic wave; and receiving one or more second high frequency pulses at one or more receivers positionable in the borehole produced by an interaction between the first sequence of high frequency pulses and the one or more features undergoing linear and nonlinear elastic distortion due to the first low frequency acoustic wave to investigate the material surrounding the borehole.

Safety considerations for wireless delivery of continuous power to implanted medical devices.

PubMed

Lucke, Lori; Bluvshtein, Vlad

2014-01-01

Wireless power systems for use with implants are referred to as transcutaneous energy transmission systems (TETS) and consist of an implanted secondary coil and an external primary coil along with supporting electronics. A TETS system could be used to power ventricular assist systems and eliminate driveline infections. There are both direct and indirect safety concerns that must be addressed when continuously transferring power through the skin. Direct safety concerns include thermal tissue damage caused by exposure to the electromagnetic fields, coil heating effects, and potential unwanted nerve stimulation. Indirect concerns are those caused by potential interference of the TETS system with other implanted devices. Wireless power systems are trending towards higher frequency operation. Understanding the limits for safe operation of a TETS system across a range of frequencies is important. A low frequency and a high frequency implementation are simulated to demonstrate the impact of this trend for a VAD application.

Nonlinear optical modulation in a plasmonic Bi:YIG Mach-Zehnder interferometer

NASA Astrophysics Data System (ADS)

Firby, C. J.; Elezzabi, A. Y.

2017-02-01

In this work, we propose a magnetoplasmonic modulator for nonlinear radio-frequency (RF) modulation of an integrated optical signal. The modulator consists of a plasmonic Mach-Zehnder interferometer (MZI), constructed of the ferrimagnetic garnet, bismuth-substituted yttrium iron garnet (Bi:YIG). The transverse component of the Bi:YIG magnetization induces a nonreciprocal phase shift (NRPS) onto the guided optical mode, which can be actively modulated through external magnetic fields. In an MZI, the modulated phase shift in turn modulates the output optical intensity. Due to the highly nonlinear evolution of the Bi:YIG magnetization, we show that the spectrum of the output modulated intensity signal can contain harmonics of the driving RF field, frequency splitting around the driving frequency, down-conversion, or mixing of multiple RF signals. This device provides a unique mechanism of simultaneously generating a number of modulation frequencies within a single device.

Low-noise SQUID

DOEpatents

Dantsker, Eugene; Clarke, John

2000-01-01

The present invention comprises a high-transition-temperature superconducting device having low-magnitude low-frequency noise-characteristics in magnetic fields comprising superconducting films wherein the films have a width that is less than or equal to a critical width, w.sub.C, which depends on an ambient magnetic field. For operation in the Earth's magnetic field, the critical width is about 6 micrometers (.mu.m). When made with film widths of about 4 .mu.m an inventive high transition-temperature, superconducting quantum interference device (SQUID) excluded magnetic flux vortices up to a threshold ambient magnetic field of about 100 microTesla (.mu.T). SQUIDs were fabricated having several different film strip patterns. When the film strip width was kept at about 4 .mu.m, the SQUIDs exhibited essentially no increase in low-frequency noise, even when cooled in static magnetic fields of magnitude up to 100 .mu.T. Furthermore, the mutual inductance between the inventive devices and a seven-turn spiral coil was at least 85% of that for inductive coupling to a conventional SQUID.

Vortex spin-torque oscillator stabilized by phase locked loop using integrated circuits

NASA Astrophysics Data System (ADS)

Kreissig, Martin; Lebrun, R.; Protze, F.; Merazzo-Jaimes, K.; Hem, J.; Vila, L.; Ferreira, R.; Cyrille, M.-C.; Ellinger, F.; Cros, V.; Ebels, U.; Bortolotti, P.

2017-05-01

Spin-torque nano-oscillators (STO) are candidates for the next technological implementation of spintronic devices in commercial electronic systems. For use in microwave applications, improving the noise figures by efficient control of their phase dynamics is a mandatory requirement. In order to achieve this, we developed a compact phase locked loop (PLL) based on custom integrated circuits (ICs) and demonstrate that it represents an efficient way to reduce the phase noise level of a vortex based STO. The advantage of our approach to phase stabilize STOs is that our compact system is highly reconfigurable e.g. in terms of the frequency divider ratio N, RF gain and loop gain. This makes it robust against device to device variations and at the same time compatible with a large range of STOs. Moreover, by taking advantage of the natural highly non-isochronous nature of the STO, the STO frequency can be easily controlled by e.g. changing the divider ratio N.

Design and Performance Analysis of Depletion-Mode InSb Quantum-Well Field-Effect Transistor for Logic Applications

NASA Astrophysics Data System (ADS)

Islam, R.; Uddin, M. M.; Hossain, M. Mofazzal; Matin, M. A.

The design of a 1μm gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10nm-thick Al2O3 gate dielectric has been optimized using a quantum corrected self-consistent Schrödinger-Poisson (QCSP) and two-dimensional drift-diffusion model. The model predicts a very high electron mobility of 4.42m2V-1s-1 at Vg=0V, a small pinch off gate voltage (Vp) of -0.25V, a maximum extrinsic transconductance (gm) of ˜4.85mS/μm and a drain current density of more than 3.34mA/μm. A short-circuit current-gain cut-off frequency (fT) of 374GHz and a maximum oscillation frequency (fmax) of 645GHz are predicted for the device. These characteristics make the device a potential candidate for low power, high-speed logic electronic device applications.

Chemical Vapor Deposition Of Silicon Carbide

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Larkin, David J.; Matus, Lawrence G.; Petit, Jeremy B.

1993-01-01

Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

Estimation of intrinsic and extrinsic capacitances of graphene self-switching diode using conformal mapping technique

NASA Astrophysics Data System (ADS)

Singh, Arun K.; Auton, Gregory; Hill, Ernie; Song, Aimin

2018-07-01

Due to a very high carrier concentration and low band gap, graphene based self-switching diodes do not demonstrate a very high rectification ratio. Despite that, it takes the advantage of graphene’s high carrier mobility and has been shown to work at very high microwave frequencies. However, the AC component of these devices is hidden in the very linear current–voltage characteristics. Here, we extract and quantitatively study the device capacitance that determines the device nonlinearity by implementing a conformal mapping technique. The estimated value of the nonlinear component or curvature coefficient from DC results based on Shichman–Hodges model predicts the rectified output voltage, which is in good agreement with the experimental RF results.

Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

NASA Technical Reports Server (NTRS)

Ketterson, Andrew A.; Masselink, William T.; Gedymin, Jon S.; Klem, John; Peng, Chin-Kun

1986-01-01

High-performance pseudomorphic In(y)Ga(1-y)As/Al0.15-Ga0.85As y = 0.05-0.2 MODFET's grown by MBE have been characterized at dc (300 and 77 K) and RF frequencies. Transconductances as high 310 and 380 mS/mm and drain currents as high as 290 and 310 mA/mm were obtained at 300 and 77 K, respectively, for 1-micron gate lengths and 3-micron source-drain spacing devices. Lack of persistent trapping effects, I-V collapse, and threshold voltage shifts observed with these devices are attributed to the use of low mole fraction Al(x)Ga(1-x)As while still maintaining two-dimensional electron gas concentrations of about 1.3 x to the 12th per sq cm. Detailed microwave S-parameter measurements indicate a current gain cut-off frequency of 24.5 GHz when y = 0.20, which is as much as 100 percent better than similar GaAs/AlGaAs MODFET structures, and a maximum frequency of oscillation of 40 GHz.

Failure mechanism of THz GaAs photoconductive antenna

NASA Astrophysics Data System (ADS)

Qadri, Syed B.; Wu, Dong H.; Graber, Benjamin D.; Mahadik, Nadeemullah A.; Garzarella, Anthony

2012-07-01

We investigated the failure mechanism of THz GaAs photoconductive antenna using high resolution x-ray diffraction topography. From these studies, it was found that grain boundaries are formed during the high frequency device operation. This results in the segregation of gold at the boundaries causing electromigration of the metal between the gold micro-strips. This disrupts the photocurrents from being produced by femtosecond laser thus preventing terahertz beam generation from the photoconductive antennae leading to device failure.

Broadband and high modulation-depth THz modulator using low bias controlled VO2-integrated metasurface.

PubMed

Zhou, Gaochao; Dai, Penghui; Wu, Jingbo; Jin, Biaobing; Wen, Qiye; Zhu, Guanghao; Shen, Ze; Zhang, Caihong; Kang, Lin; Xu, Weiwei; Chen, Jian; Wu, Peiheng

2017-07-24

An active vanadium dioxide integrated metasurface offering broadband transmitted terahertz wave modulation with large modulation-depth under electrical control is demonstrated. The device consists of metal bias-lines arranged with grid-structure patterned vanadium dioxide (VO 2 ) film on sapphire substrate. Amplitude transmission is continuously tuned from more than 78% to 28% or lower in the frequency range from 0.3 THz to 1.0 THz, by means of electrical bias at temperature of 68 °C. The physical mechanism underlying the device's electrical tunability is investigated and found to be attributed to the ohmic heating. The developed device possessing over 87% modulation depth with 0.7 THz frequency band is expected to have many potential applications in THz regime such as tunable THz attenuator.

Development and Performance of an Ultrawideband Stepped-Frequency Radar for Landmine and Improvised Explosive Device (IED) Detection

NASA Astrophysics Data System (ADS)

Phelan, Brian R.; Gallagher, Kyle A.; Sherbondy, Kelly D.; Ranney, Kenneth I.; Narayanan, Ram M.

2014-11-01

Under support from the Army Research Laboratory's Partnerships in Research Transition program, a stepped-frequency radar (SFR) is currently under development, which allows for manipulation of the radiated spectrum while still maintaining an effective ultra-wide bandwidth. The SFR is a vehicle-mounted forward-looking ground-penetrating radar designed for high-resolution detection of buried landmines and improvised explosive devices. The SFR can be configured to precisely excise prohibited or interfering frequency bands and also possesses frequency-hopping capabilities. This paper discusses the expected performance features of the SFR as derived from laboratory testing and characterization. Ghosts and artifacts appearing in the range profile arise from gaps in the operating band when the system is configured to omit specific frequencies. An analysis of these effects is discussed and our current solution is presented. Future prospects for the SFR are also discussed, including data collection campaigns at the Army's Adelphi Laboratory Center and the Countermine Test Site.

Impact of gate engineering in enhancement mode n++GaN/InAlN/AlN/GaN HEMTs

NASA Astrophysics Data System (ADS)

Adak, Sarosij; Swain, Sanjit Kumar; Rahaman, Hafizur; Sarkar, Chandan Kumar

2016-12-01

This paper illustrate the effect of gate material engineering on the performance of enhancement mode n++GaN/InAlN/AlN/GaN high electron mobility transistors (HEMTs). A comparative analysis of key device parameters is discussed for the Triple Material Gate (TMG), Dual Material Gate (DMG) and the Single Material Gate (SMG) structure HEMTs by considering the same device dimensions. The simulation results shows that an significant improvement is noticed in the key analysis parameters such as drain current (Id), transconductance (gm), cut off frequency (fT), RF current gain, maximum cut off frequency (fmax) and RF power gain of the gate material engineered devices with respect to SMG normally off n++GaN/InAlN/AlN/GaN HEMTs. This improvement is due to the existence of the perceivable step in the surface potential along the channel which successfully screens the drain potential variation in the source side of the channel for the gate engineering devices. The analysis suggested that the proposed TMG and DMG engineered structure enhancement mode n++GaN/InAlN/AlN/GaN HEMTs can be considered as a potential device for future high speed, microwave and digital application.

Wideband electromagnetic energy harvesting from ambient vibrations

NASA Astrophysics Data System (ADS)

Mallick, Dhiman; Podder, Pranay; Roy, Saibal

2015-06-01

Different bandwidth widening schemes of electromagnetic energy harvesters have been reported in this work. The devices are fabricated on FR4 substrate using laser micromachining techniques. The linear device operate in a narrow band around the resonance; in order to tune resonant frequency of the device electrically, two different types of complex load topologies are adopted. Using capacitive load, the resonant frequency is tuned in the low frequency direction whereas using inductive load, the resonant frequency is tuned in the high frequency direction. An overall tuning range of ˜2.4 Hz is obtained at 0.3g though the output power dropped significantly over the tuning range. In order to improve the off-resonance performance, nonlinear oscillation based systems are adopted. A specially designed spring arm with fixed-guided configuration produced single well nonlinear monostable configuration. With increasing input acceleration, wider bandwidth is obtained with such a system as large displacement, stretching nonlinearity comes into play and 9.55 Hz bandwidth is obtained at 0.5g. The repulsive force between one static and one vibrating oppositely polarized magnets are used to generate bistable nonlinear potential system. The distance between the mentioned magnets is varied between 4 to 10 mm to produce tunable nonlinearity with a maximum half power bandwidth over 3 Hz at 0.5g.

High breakdown voltage and high driving current in a novel silicon-on-insulator MESFET with high- and low-resistance boxes in the drift region

NASA Astrophysics Data System (ADS)

Naderi, Ali; Mohammadi, Hamed

2018-06-01

In this paper a novel silicon-on-insulator metal oxide field effect transistor (SOI-MESFET) with high- and low-resistance boxes (HLRB) is proposed. This structure increases the current and breakdown voltage, simultaneously. The semiconductor at the source side of the channel is doped with higher impurity than the other parts to reduce its resistance and increase the driving current as low-resistance box. An oxide box is implemented at the upper part of the channel from the drain region toward the middle of the channel as the high-resistance box. Inserting a high-resistance box increases the breakdown voltage and improves the RF performance of the device because of its higher tolerable electric field and modification in gate-drain capacitance, respectively. The high-resistance region reduces the current density of the device which is completely compensated by low-resistance box. A 92% increase in breakdown voltage and an 11% improvement in the device current have been obtained. Also, maximum oscillation frequency, unilateral power gain, maximum available gain, maximum stable gain, and maximum output power density are improved by 7%, 35%, 23%, 26%, and 150%, respectively. These results show that the HLRB-SOI-MESFET can be considered as a candidate to replace Conventional SOI-MESFET (C-SOI-MESFET) for high-voltage and high-frequency applications.

DC biased low-frequency insulating constriction dielectrophoresis for protein biomolecules concentration.

PubMed

Zhang, Peng; Liu, Yuxin

2017-09-01

Sample enrichment or molecules concentration is considered an essential step in sample processing of miniaturized devices aimed at biosensing and bioanalysis. Among all the means involved to achieve this aim, dielectrophoresis (DEP) is increasingly employed in molecules manipulation and concentration because it is non-destructive and high efficiency. This paper presents a methodology to achieve protein concentration utilizing the combination effects of electrokinetics and low frequency insulating dielectrophoresis (iDEP) generated within a microfluidic device, in which a submicron constricted channel was fabricated using DNA molecular combing and replica molding. This fabrication technique avoids using e-beam lithography or other complicated nanochannel fabrication methods, and provides an easy and low cost approach with the flexibility of controlling channel dimensions to create highly constricted channels embedded in a microfluidic device. With theoretical analysis and experiments, we demonstrated that fluorescein isothiocyanate conjugated bovine serum albumin (FITC-BSA) protein molecules can be significantly concentrated to form an arc-shaped band near the constricted channel under the effects of a negative dielectrophoretic force and DC electrokinetic forces within a short period of time. It was also observed that the amplitudes of the applied DC and AC electric fields, the AC frequencies as well as the suspending medium conductivities had strong effects on the concentration responses of the FITC-BSA molecules, including the concentrated area and position, intensities of the focused molecules, and concentration speed. Our method provides a simple and flexible approach for quickly concentrating protein molecules by controlling the applied electric field parameters. The iDEP device reported in this paper can be used as a stand-alone sensor or worked as a pre-concentration module integrated with biosensors for protein biomarker detection. Furthermore, low frequency dielectrophoresis provides practical uses for integrating the concentration module with a portable biosensing system.

Oscillating devices for airway clearance in people with cystic fibrosis.

PubMed

Morrison, Lisa; Agnew, Jennifer

2014-07-20

Chest physiotherapy is widely prescribed to assist the clearance of airway secretions in people with cystic fibrosis. Oscillating devices generate intra- or extra-thoracic oscillations orally or external to the chest wall. Internally they create variable resistances within the airways, generating controlled oscillating positive pressure which mobilises mucus. Extra-thoracic oscillations are generated by forces outside the respiratory system, e.g. high frequency chest wall oscillation. To identify whether oscillatory devices, oral or chest wall, are effective for mucociliary clearance and whether they are equivalent or superior to other forms of airway clearance in the successful management of secretions in people with cystic fibrosis. We searched the Cochrane Cystic Fibrosis and Genetic Disorders Group Trials Register comprising references identified from comprehensive electronic database searches and hand searches of relevant journals and abstract books of conference proceedings. Latest search of the Cystic Fibrosis Trials Register: 13 January 2014. Randomised controlled studies and controlled clinical studies of oscillating devices compared with any other form of physiotherapy in people with cystic fibrosis. Single-treatment interventions (therapy technique used only once in the comparison) were excluded. Two authors independently applied the inclusion criteria to publications and assessed the quality of the included studies. The searches identified 68 studies with a total of 288 references; 35 studies (total of 1050 participants) met the inclusion criteria. Studies varied in duration from up to one week to one year; 20 of the studies were cross-over in design. The studies also varied in type of intervention and the outcomes measured, furthermore data were not published in sufficient detail in most of these studies, so meta-analysis was limited. Few studies were considered to have a low risk of bias in any domain. It is not possible to blind participants and clinicians to physiotherapy interventions, but 10 studies did blind the outcome assessors.Forced expiratory volume in one second was the most frequently measured outcome. One long-term study (seven months) compared oscillatory devices with either conventional physiotherapy or breathing techniques and found statistically significant differences in some lung function parameters in favour of oscillating devices. One study identified an increase in frequency of exacerbations requiring antibiotics whilst using high frequency chest wall oscillation when compared to positive expiratory pressure. There were some small but significant changes in secondary outcome variables such as sputum volume or weight, but not wholly in favour of oscillating devices. Participant satisfaction was reported in 15 studies but this was not specifically in favour of an oscillating device, as some participants preferred breathing techniques or techniques used prior to the study interventions. The results for the remaining outcome measures were not examined or reported in sufficient detail to provide any high level evidence. There was no clear evidence that oscillation was a more or less effective intervention overall than other forms of physiotherapy; furthermore there was no evidence that one device is superior to another. The findings from one study showing an increase in frequency of exacerbations requiring antibiotics whilst using an oscillating device compared to positive expiratory pressure may have significant resource implications. More adequately-powered long-term randomised controlled trials are necessary and outcomes measured should include frequency of exacerbations, patient preference, adherence to therapy and general satisfaction with treatment. Increased adherence to therapy may then lead to improvements in other parameters, such as exercise tolerance and respiratory function. Additional evidence is needed to evaluate whether oscillating devices combined with other forms of airway clearance is efficacious in people with cystic fibrosis.

Generating clock signals for a cycle accurate, cycle reproducible FPGA based hardware accelerator

DOEpatents

Asaad, Sameth W.; Kapur, Mohit

2016-01-05

A method, system and computer program product are disclosed for generating clock signals for a cycle accurate FPGA based hardware accelerator used to simulate operations of a device-under-test (DUT). In one embodiment, the DUT includes multiple device clocks generating multiple device clock signals at multiple frequencies and at a defined frequency ratio; and the FPG hardware accelerator includes multiple accelerator clocks generating multiple accelerator clock signals to operate the FPGA hardware accelerator to simulate the operations of the DUT. In one embodiment, operations of the DUT are mapped to the FPGA hardware accelerator, and the accelerator clock signals are generated at multiple frequencies and at the defined frequency ratio of the frequencies of the multiple device clocks, to maintain cycle accuracy between the DUT and the FPGA hardware accelerator. In an embodiment, the FPGA hardware accelerator may be used to control the frequencies of the multiple device clocks.

High-Performance Sensors Based on Resistance Fluctuations of Single-Layer-Graphene Transistors.

PubMed

Amin, Kazi Rafsanjani; Bid, Aveek

2015-09-09

One of the most interesting predicted applications of graphene-monolayer-based devices is as high-quality sensors. In this article, we show, through systematic experiments, a chemical vapor sensor based on the measurement of low-frequency resistance fluctuations of single-layer-graphene field-effect-transistor devices. The sensor has extremely high sensitivity, very high specificity, high fidelity, and fast response times. The performance of the device using this scheme of measurement (which uses resistance fluctuations as the detection parameter) is more than 2 orders of magnitude better than a detection scheme in which changes in the average value of the resistance is monitored. We propose a number-density-fluctuation-based model to explain the superior characteristics of a noise-measurement-based detection scheme presented in this article.

High-temperature langatate elastic constants and experimental validation up to 900 degrees C.

PubMed

Davulis, Peter M; da Cunha, Mauricio Pereira

2010-01-01

This paper reports on a set of langatate (LGT) elastic constants extracted from room temperature to 1100 degrees C using resonant ultrasound spectroscopy techniques and an accompanying assessment of these constants at high temperature. The evaluation of the constants employed SAW device measurements from room temperature to 900 degrees C along 6 different LGT wafer orientations. Langatate parallelepipeds and wafers were aligned, cut, ground, and polished, and acoustic wave devices were fabricated at the University of Maine facilities along specific orientations for elastic constant extraction and validation. SAW delay lines were fabricated on LGT wafers prepared at the University of Maine using 100-nm platinumrhodium- zirconia electrodes capable of withstanding temperatures up to 1000 degrees C. The numerical predictions based on the resonant ultrasound spectroscopy high-temperature constants were compared with SAW phase velocity, fractional frequency variation, and temperature coefficients of delay extracted from SAW delay line frequency response measurements. In particular, the difference between measured and predicted fractional frequency variation is less than 2% over the 25 degrees C to 900 degrees C temperature range and within the calculated and measured discrepancies. Multiple temperature-compensated orientations at high temperature were predicted and verified in this paper: 4 of the measured orientations had turnover temperatures (temperature coefficient of delay = 0) between 200 and 420 degrees C, and 2 had turnover temperatures below 100 degrees C. In summary, this work reports on extracted high-temperature elastic constants for LGT up to 1100 degrees C, confirmed the validity of those constants by high-temperature SAW device measurements up to 900 degrees C, and predicted and identified temperature-compensated LGT orientations at high temperature.

High-efficiency piezoelectric micro harvester for collecting low-frequency mechanical energy.

PubMed

Li, Xin; Song, Jinhui; Feng, Shuanglong; Xie, Xiong; Li, Zhenhu; Wang, Liang; Pu, Yayun; Soh, Ai Kah; Shen, Jun; Lu, Wenqiang; Liu, Shuangyi

2016-12-02

A single-layer zinc oxide (ZnO) nanorod array-based micro energy harvester was designed and integrated with a piezoelectric metacapacitor. The device presents outstanding low-frequency (1-10 Hz) mechanical energy harvesting capabilities. When compared with conventional pristine ZnO nanostructured piezoelectric harvesters or generators, both open-circuit potential and short-circuit current are significantly enhanced (up to 3.1 V and 124 nA cm -2 ) for a single mechanical knock (∼34 kPa). Higher electromechanical conversion efficiency (1.3 pC/Pa) is also observed. The results indicate that the integration of the piezoelectric metacapacitor is a crucial factor for improving the low-frequency energy harvesting performance. A double piezoelectric-driven mechanism is proposed to explain current higher output power, in which the metacapacitor plays the multiple roles of charge pumping, storing and transferring. An as-fabricated prototype device for lighting an LED demonstrates high power transference capability, with over 95% transference efficiency to the external load.

21 CFR 868.2375 - Breathing frequency monitor.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Breathing frequency monitor. 868.2375 Section 868.2375 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Monitoring Devices § 868.2375 Breathing frequency monitor. (a) Identification. A breathing (ventilatory)...

Design of 1 MHz Solid State High Frequency Power Supply

NASA Astrophysics Data System (ADS)

Parmar, Darshan; Singh, N. P.; Gajjar, Sandip; Thakar, Aruna; Patel, Amit; Raval, Bhavin; Dhola, Hitesh; Dave, Rasesh; Upadhay, Dishang; Gupta, Vikrant; Goswami, Niranjan; Mehta, Kush; Baruah, Ujjwal

2017-04-01

High Frequency Power supply (HFPS) is used for various applications like AM Transmitters, metallurgical applications, Wireless Power Transfer, RF Ion Sources etc. The Ion Source for a Neutral beam Injector at ITER-India uses inductively coupled power source at High Frequency (∼1 MHz). Switching converter based topology used to generate 1 MHz sinusoidal output is expected to have advantages on efficiency and reliability as compared to traditional RF Tetrode tubes based oscillators. In terms of Power Electronics, thermal and power coupling issues are major challenges at such a high frequency. A conceptual design for a 200 kW, 1 MHz power supply and a prototype design for a 600 W source been done. The prototype design is attempted with Class-E amplifier topology where a MOSFET is switched resonantly. The prototype uses two low power modules and a ferrite combiner to add the voltage and power at the output. Subsequently solution with Class-D H-Bridge configuration have been evaluated through simulation where module design is stable as switching device do not participate in resonance, further switching device voltage rating is substantially reduced. The rating of the modules is essentially driven by the maximum power handling capacity of the MOSFETs and ferrites in the combiner circuit. The output passive network including resonance tuned network and impedance matching network caters for soft switching and matches the load impedance to 50ohm respectively. This paper describes the conceptual design of a 200 kW high frequency power supply and experimental results of the prototype 600 W, 1 MHz source.

Pros and cons of symmetrical dual-k spacer technology in hybrid FinFETs

NASA Astrophysics Data System (ADS)

Pradhan, K. P.; Andrade, M. G. C.; Sahu, P. K.

2016-12-01

The symmetrical dual-k spacer technology in hybrid FinFETs has been widely explored for better electrostatic control of the fin-based devices in nanoscale region. Since, high-k tangible spacer materials are broadly became a matter of study due to their better immunity to the short channel effects (SCEs) in nano devices. However, the only cause that restricts the circuit designers from using high-k spacer is the unreasonable increasing fringing capacitances. This work quantitatively analyzed the benefits and drawbacks of considering two different dielectric spacer materials symmetrically in either sides of the channel for the hybrid device. From the demonstrated results, the inclusion of high-k spacer predicts an effective reduction in off-state leakage along with an improvement in drive current. However, these devices have paid the cost in terms of a high total gate-to-gate capacitance (Cgg) that consequently results poor cutoff frequency (fT) and delay.

Computational and Mathematical Modeling of Coupled Superconducting Quantum Interference Devices

NASA Astrophysics Data System (ADS)

Berggren, Susan Anne Elizabeth

This research focuses on conducting an extensive computational investigation and mathematical analysis into the average voltage response of arrays of Superconducting Quantum Interference Devices (SQUIDs). These arrays will serve as the basis for the development of a sensitive, low noise, significantly lower Size, Weight and Power (SWaP) antenna integrated with Low-Noise Amplifier (LNA) using the SQUID technology. The goal for this antenna is to be capable of meeting all requirements for Guided Missile Destroyers (DDG) 1000 class ships for Information Operations/Signals Intelligence (IO/SIGINT) applications in Very High Frequency/Ultra High Frequency (V/UHF) bands. The device will increase the listening capability of receivers by moving technology into a new regime of energy detection allowing wider band, smaller size, more sensitive, stealthier systems. The smaller size and greater sensitivity will allow for ships to be “de-cluttered” of their current large dishes and devices, replacing everything with fewer and smaller SQUID antenna devices. The fewer devices present on the deck of a ship, the more invisible the ship will be to enemy forces. We invent new arrays of SQUIDs, optimized for signal detection with very high dynamic range and excellent spur-free dynamic range, while maintaining extreme small size (and low radar cross section), wide bandwidth, and environmentally noise limited sensitivity, effectively shifting the bottle neck of receiver systems forever away from the antenna itself deeper into the receiver chain. To accomplish these goals we develop and validate mathematical models for different designs of SQUID arrays and use them to invent a new device and systems design. This design is capable of significantly exceeding, per size weight and power, state-of-the-art receiver system measures of performance, such as bandwidth, sensitivity, dynamic range, and spurious-free dynamic range.

Oxidation of gallium arsenide in a plasma multipole device. Study of the MOS structures obtained

NASA Technical Reports Server (NTRS)

Gourrier, S.; Mircea, A.; Simondet, F.

1980-01-01

The oxygen plasma oxidation of GaAs was studied in order to obtain extremely high frequency responses with MOS devices. In the multipole system a homogeneous oxygen plasma of high density can easily be obtained in a large volume. This system is thus convenient for the study of plasma oxidation of GaAs. The electrical properties of the MOS diodes obtained in this way are controlled by interface states, located mostly in the upper half of the band gap where densities in the 10 to the 13th power/(sq cm) (eV) range can be estimated. Despite these interface states the possibility of fabricating MOSFET transistors working mostly in the depletion mode for a higher frequency cut-off still exists.

Enhancement mode GaN-based multiple-submicron channel array gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors

NASA Astrophysics Data System (ADS)

Lee, Ching-Ting; Wang, Chun-Chi

2018-04-01

To study the function of channel width in multiple-submicron channel array, we fabricated the enhancement mode GaN-based gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) with a channel width of 450 nm and 195 nm, respectively. In view of the enhanced gate controllability in a narrower fin-channel structure, the transconductance was improved from 115 mS/mm to 151 mS/mm, the unit gain cutoff frequency was improved from 6.2 GHz to 6.8 GHz, and the maximum oscillation frequency was improved from 12.1 GHz to 13.1 GHz of the devices with a channel width of 195 nm, compared with the devices with a channel width of 450 nm.

On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip

DOE PAGES

Mi, Hongyi; Yuan, Hao -Chih; Seo, Jung -Hun; ...

2017-03-27

A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage V th, transconductance g m, cut-off frequency f T and maximum oscillation frequency f max.more » Finally, the results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.« less

On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mi, Hongyi; Yuan, Hao -Chih; Seo, Jung -Hun

A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage V th, transconductance g m, cut-off frequency f T and maximum oscillation frequency f max.more » Finally, the results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.« less

HIgh-Q Optical Micro-cavity Resonators as High Sensitive Bio-chemical and Ultrasonic Sensors

NASA Astrophysics Data System (ADS)

Ling, Tao

Optical micro-cavity resonators have quickly emerged in the past few years as a new sensing platform in a wide range of applications, such as bio-chemical molecular detection, environmental monitoring, acoustic and electromagnetic waves detection. In this thesis, we will mainly focus on developing high sensitivity silica micro-tube resonator bio-chemical sensors and high sensitivity polymer micro-ring resonator acoustic sensors. In high sensitivity silica micro-tube resonator bio-chemical sensors part: We first demonstrated a prism coupled silica micro-tube bio-chemical sensing platform to overcome the reliability problem in a fiber coupled thin wall silica micro-tube sensing platform. In refractive index sensing experiment, a unique resonance mode with sensitivity around 600nm/refractive index unit (RIU) has been observed. Surface sensing experiments also have been performed in this platform to detect lipid monolayer, lipid bilayer, electrostatic self assemble layer-by-layer as well as the interaction between the lipid bilayer and proteins. Then a theoretical study on various sensing properties on the silica micro-tube based sensing platform has been realized. Furthermore, we have proposed a coupled cavity system to further enhance the device's sensitivity above 1000nm/RIU. In high sensitivity polymer micro-ring resonator acoustic sensors part: We first presented a simplified fabrication process and realized a polymer microring with a Q factor around 6000. The fabricated device has been used to detect acoustic wave with noise equivalent pressure (NEP) around 230Pa over 1-75MHz frequency rang, which is comparable to state-of-art piezoelectric transducer and the device's frequency response also have been characterized to be up to 90MHz. A new fabrication process combined with resist reflow and thermal oxidation process has been used to improve the Q factor up to 10 5 and the device's NEP has been tested to be around 88Pa over 1-75MHz range. Further improving the device's Q factor has been realized by shifting the device's working wavelength to near-visible wavelength and further reducing the device's sidewall roughness. A record new high Q-˜x105 has been measured and the device's NEP as low as 21Pa has been measured. Furthermore, a smaller size polymer microring device has been developed and fabricated to realize larger angle beam forming applications.

Piezo-Hydraulic Actuation for Driving High Frequency Miniature Split-Stirling Pulse Tube Cryocoolers

NASA Astrophysics Data System (ADS)

Garaway, I.; Grossman, G.

2008-03-01

In recent years piezoelectric actuation has been identified as a promising means of driving miniature Stirling devices. It supports miniaturization, has a high power to volume ratio, can operate at almost any frequency, good electrical to mechanical efficiencies, and potentially has a very long operating life. The major drawback of piezoelectric actuation, however, is the very small displacements that this physical phenomenon produces. This study shows that by employing valve-less hydraulic amplification an oscillating pressure wave can be created that is sufficiently large to drive a high frequency miniature pulse tube cryocooler (as high as 500 Hz in our experiments and perhaps higher). Beyond the direct benefits derived from using piezoelectric actuation, there are further benefits derived from using the piezo-hydraulic arrangement with membranes. Due to the incompressibility of the hydraulic fluid, the actuator may be separated from the main body of the cryocooler by relatively large distances with almost no detrimental effects, and the complete lack of rubbing parts in the power conversion processes makes this type of cryocooler extremely robust. The design and experimental device, coined the "Piezo-Hydraulic Membrane Oscillator", are presented along with some test results.

Evaluation of semiconductor devices for Electric and Hybrid Vehicle (EHV) ac-drive applications, volume 1

NASA Technical Reports Server (NTRS)

Lee, F. C.; Chen, D. Y.; Jovanovic, M.; Hopkins, D. C.

1985-01-01

The results of evaluation of power semiconductor devices for electric hybrid vehicle ac drive applications are summarized. Three types of power devices are evaluated in the effort: high power bipolar or Darlington transistors, power MOSFETs, and asymmetric silicon control rectifiers (ASCR). The Bipolar transistors, including discrete device and Darlington devices, range from 100 A to 400 A and from 400 V to 900 V. These devices are currently used as key switching elements inverters for ac motor drive applications. Power MOSFETs, on the other hand, are much smaller in current rating. For the 400 V device, the current rating is limited to 25 A. For the main drive of an electric vehicle, device paralleling is normally needed to achieve practical power level. For other electric vehicle (EV) related applications such as battery charger circuit, however, MOSFET is advantageous to other devices because of drive circuit simplicity and high frequency capability. Asymmetrical SCR is basically a SCR device and needs commutation circuit for turn off. However, the device poses several advantages, i.e., low conduction drop and low cost.

Effect of Interfacial characteristics of metal clad polymeric substrates on electrical high frequency interconnection performance

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Romanofsky, R. R.; Ponchak, G. E.; Liu, D. C.

1984-01-01

Etched metallic conductor lines on metal clad polymeric substrates are used for electronic component interconnections. Significant signal losses are observed for microstrip conductor lines used for interconnecting high frequency devices. At these frequencies, the electronic signal travels closer to the metal-polymer interface due to the skin effect. Copper-teflon interfaces were characterized by scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) to determine the interfacial properties. Data relating roughness of the copper film to signal losses was compared to theory. Films used to enhance adhesion are found, to contribute to these losses.

A Novel Intracranial Pressure Readout Circuit for Passive Wireless LC Sensor.

PubMed

Wang, Fa; Zhang, Xuan; Shokoueinejad, Mehdi; Iskandar, Bermans J; Medow, Joshua E; Webster, John G

2017-10-01

We present a wide frequency range, low cost, wireless intracranial pressure monitoring system, which includes an implantable passive sensor and an external reader. The passive sensor consists of two spiral coils and transduces the pressure change to a resonant frequency shift. The external portable reader reads out the sensor's resonant frequency over a wide frequency range (35 MHz-2.7 GHz). We propose a novel circuit topology, which tracks the system's impedance and phase change at a high frequency with low-cost components. This circuit is very simple and reliable. A prototype has been developed, and measurement results demonstrate that the device achieves a suitable measurement distance (>2 cm), sufficient sample frequency (>6 Hz), fine resolution, and good measurement accuracy for medical practice. Responsivity of this prototype is 0.92 MHz/mmHg and resolution is 0.028 mmHg. COMSOL specific absorption rate simulation proves that this system is safe. Considerations to improve the device performance have been discussed, which include the size of antenna, the power radiation, the Analog-to-digital converter (ADC) choice, and the signal processing algorithm.

Experimental Validation of a Theory for a Variable Resonant Frequency Wave Energy Converter (VRFWEC)

NASA Astrophysics Data System (ADS)

Park, Minok; Virey, Louis; Chen, Zhongfei; Mäkiharju, Simo

2016-11-01

A point absorber wave energy converter designed to adapt to changes in wave frequency and be highly resilient to harsh conditions, was tested in a wave tank for wave periods from 0.8 s to 2.5 s. The VRFWEC consists of a closed cylindrical floater containing an internal mass moving vertically and connected to the floater through a spring system. The internal mass and equivalent spring constant are adjustable and enable to match the resonance frequency of the device to the exciting wave frequency, hence optimizing the performance. In a full scale device, a Permanent Magnet Linear Generator will convert the relative motion between the internal mass and the floater into electricity. For a PMLG as described in Yeung et al. (OMAE2012), the electromagnetic force proved to cause dominantly linear damping. Thus, for the present preliminary study it was possible to replace the generator with a linear damper. While the full scale device with 2.2 m diameter is expected to generate O(50 kW), the prototype could generate O(1 W). For the initial experiments the prototype was restricted to heave motion and data compared to predictions from a newly developed theoretical model (Chen, 2016).

A piezoelectric micro generator worked at low frequency and high acceleration based on PZT and phosphor bronze bonding.

PubMed

Tang, Gang; Yang, Bin; Hou, Cheng; Li, Guimiao; Liu, Jingquan; Chen, Xiang; Yang, Chunsheng

2016-12-08

Recently, piezoelectric energy harvesters (PEHs) have been paid a lot of attention by many researchers to convert mechanical energy into electrical and low level vibration. Currently, most of PEHs worked under high frequency and low level vibration. In this paper, we propose a micro cantilever generator based on the bonding of bulk PZT wafer and phosphor bronze, which is fabricated by MEMS technology, such as mechanical chemical thinning and etching. The experimental results show that the open-circuit output voltage, output power and power density of this fabricated prototype are 35 V, 321 μW and 8664 μW cm -3 at the resonant frequency of 100.8 Hz, respectively, when it matches an optimal loading resistance of 140 kΩ under the excitation of 3.0 g acceleration. The fabricated micro generator can obtain the open-circuit stable output voltage of 61.2 V when the vibration acceleration arrives at 7.0 g. Meanwhile, when this device is pasted on the vibrating vacuum pump, the output voltage is about 11 V. It demonstrates that this novel proposed device can scavenge high vibration level energy at low frequency for powering the inertial sensors in internet of things application.

A piezoelectric micro generator worked at low frequency and high acceleration based on PZT and phosphor bronze bonding

PubMed Central

Tang, Gang; Yang, Bin; Hou, Cheng; Li, Guimiao; Liu, Jingquan; Chen, Xiang; Yang, Chunsheng

2016-01-01

Recently, piezoelectric energy harvesters (PEHs) have been paid a lot of attention by many researchers to convert mechanical energy into electrical and low level vibration. Currently, most of PEHs worked under high frequency and low level vibration. In this paper, we propose a micro cantilever generator based on the bonding of bulk PZT wafer and phosphor bronze, which is fabricated by MEMS technology, such as mechanical chemical thinning and etching. The experimental results show that the open-circuit output voltage, output power and power density of this fabricated prototype are 35 V, 321 μW and 8664 μW cm−3 at the resonant frequency of 100.8 Hz, respectively, when it matches an optimal loading resistance of 140 kΩ under the excitation of 3.0 g acceleration. The fabricated micro generator can obtain the open-circuit stable output voltage of 61.2 V when the vibration acceleration arrives at 7.0 g. Meanwhile, when this device is pasted on the vibrating vacuum pump, the output voltage is about 11 V. It demonstrates that this novel proposed device can scavenge high vibration level energy at low frequency for powering the inertial sensors in internet of things application. PMID:27929139

47 CFR 2.801 - Radiofrequency device defined.

Code of Federal Regulations, 2011 CFR

2011-10-01

....801 Telecommunication FEDERAL COMMUNICATIONS COMMISSION GENERAL FREQUENCY ALLOCATIONS AND RADIO TREATY MATTERS; GENERAL RULES AND REGULATIONS Marketing of Radio-frequency Devices § 2.801 Radiofrequency device..., but are not limited to: (a) The various types of radio communication transmitting devices described...

Single-mode very wide tunability in laterally coupled semiconductor lasers with electrically controlled reflectivities

NASA Astrophysics Data System (ADS)

Griffel, Giora; Chen, Howard Z.; Grave, Ilan; Yariv, Amnon

1991-04-01

The operation of a novel multisection structure comprised of laterally coupled gain-guided semiconductor lasers is demonstrated. It is shown that tunable single longitudinal mode operation can be achieved with a high degree of frequency selectivity. The device has a tuning range of 14.5 nm, the widest observed to date in a monolithic device.

Heart Sonar Images

NASA Technical Reports Server (NTRS)

1976-01-01

Stanford University cardiologists, with the help of Ames engineers, have validated the operation of the echo-cardioscope to monitor cardiac functions of astronauts in flight. This device forms images of internal structures using high-frequency sound. The instrument is compact, lightweight, portable, and DC powered for safety. The battery powered ultrasonic device, being isolated from its electrical environment, has an inherent safety advantage especially with infants.

A YBCO RF-squid variable temperature susceptometer and its applications

NASA Technical Reports Server (NTRS)

Zhou, Luwei; Qiu, Jinwu; Zhang, Xianfeng; Tang, Zhimin; Cai, Yimin; Qian, Yongjia

1991-01-01

The Superconducting QUantum Interference Device (SQUID) susceptibility using a high-temperature radio-frequency (rf) SQUID and a normal metal pick-up coil is employed in testing weak magnetization of the sample. The magnetic moment resolution of the device is 1 x 10(exp -6) emu, and that of the susceptibility is 5 x 10(exp -6) emu/cu cm.

Progress and opportunities in high-voltage microactuator powering technology towards one-chip MEMS

NASA Astrophysics Data System (ADS)

Mita, Yoshio; Hirakawa, Atsushi; Stefanelli, Bruno; Mori, Isao; Okamoto, Yuki; Morishita, Satoshi; Kubota, Masanori; Lebrasseur, Eric; Kaiser, Andreas

2018-04-01

In this paper, we address issues and solutions for micro-electro-mechanical-systems (MEMS) powering through semiconductor devices towards one-chip MEMS, especially those with microactuators that require high voltage (HV, which is more than 10 V, and is often over 100 V) for operation. We experimentally and theoretically demonstrated that the main reason why MEMS actuators need such HV is the tradeoff between resonant frequency and displacement amplitude. Indeed, the product of frequency and displacement is constant regardless of the MEMS design, but proportional to the input energy, which is the square of applied voltage in an electrostatic actuator. A comprehensive study on the principles of HV device technology and associated circuit technologies, especially voltage shifter circuits, was conducted. From the viewpoint of on-chip energy source, series-connected HV photovoltaic cells have been discussed. Isolation and electrical connection methods were identified to be key enabling technologies. Towards future rapid development of such autonomous devices, a technology to convert standard 5 V CMOS devices into HV circuits using SOI substrate and a MEMS postprocess is presented. HV breakdown experiments demonstrated this technology can hold over 700 to 1000 V, depending on the layout.

A Practical Tablet-Based Hearing Aid Configuration as an Exemplar Project for Students of Instrumentation.

PubMed

Simeoni, Ricardo

2015-06-11

This paper presents the configuration and digital signal processing details of a tablet-based hearing aid transmitting wirelessly to standard earphones, whereby the tablet performs full sound processing rather than solely providing a means of setting adjustment by streaming to conventional digital hearing aids. The presented device confirms the recognized advantages of this tablet-based approach (e.g., in relation to cost, frequency domain processing, amplification range, versatility of functionality, component battery rechargeability), and flags the future wider-spread availability of such hearing solutions within mainstream healthcare. The use of a relatively high sampling frequency was found to be beneficial for device performance, while the use of optional off-the-shelf add-on components (e.g., data acquisition device, high fidelity microphone, compact wireless transmitter/receiver, wired headphones) are also discussed in relation to performance optimization. The easy-to-follow configuration utilized is well suited to student learning/research instrumentation projects within the health and biomedical sciences. In this latter regard, the presented device was pedagogically integrated into a flipped classroom approach for the teaching of bioinstrumentation within an Allied Health Sciences School, with the subsequent establishment of positive student engagement outcomes.

Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement

NASA Astrophysics Data System (ADS)

Raad, Bhagwan Ram; Nigam, Kaushal; Sharma, Dheeraj; Kondekar, P. N.

2016-06-01

This script features a study of bandgap, gate material work function and gate dielectric engineering for enhancement of DC and Analog/RF performance, reduction in the hot carriers effect (HCEs) and drain induced barrier lowering (DIBL) for better device reliability. In this concern, the use of band gap and gate material work function engineering improves the device performance in terms of the ON-state current and suppressed ambipolar behaviour with maintaining the low OFF-state current. With these advantages, the use of gate material work function engineering imposes restriction on the high frequency performance due to increment in the parasitic capacitances and also introduces the hot carrier effects. Hence, the gate dielectric engineering with bandgap and gate material work function engineering are used in this paper to overcome the cons of the gate material work function engineering by obtaining a superior performance in terms of the current driving capability, ambipolar conduction, HCEs, DIBL and high frequency parameters of the device for ultra-low power applications. Finally, the optimization of length for different work function is performed to get the best out of this.

Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

NASA Astrophysics Data System (ADS)

Murugapandiyan, P.; Ravimaran, S.; William, J.; Meenakshi Sundaram, K.

2017-11-01

In this article, we present the DC and microwave characteristics of a novel 30 nm T-gate InAlN/AlN/GaN HEMT with AlGaN back-barrier. The device structure is simulated by using Synopsys Sentaurus TCAD Drift-Diffusion transport model at room temperature. The device features are heavily doped (n++ GaN) source/drain regions with Si3N4 passivated device surface for reducing the contact resistances and gate capacitances of the device, which uplift the microwave characteristics of the HEMTs. 30 nm gate length D-mode (E-mode) HEMT exhibited a peak drain current density Idmax of 2.3 (2.42) A/mm, transconductance gm of 1.24(1.65) S/mm, current gain cut-off frequency ft of 262 (246) GHz, power gain cut-off frequency fmax of 246(290) GHz and the three terminal off-state breakdown voltage VBR of 40(38) V. The preeminent microwave characteristics with the higher breakdown voltage of the proposed GaN-based HEMT are the expected to be the most optimistic applicant for future high power millimeter wave applications.

Strain coupling between nitrogen vacancy centers and the mechanical motion of a diamond optomechanical crystal resonator

NASA Astrophysics Data System (ADS)

Cady, J. V.; Lee, K. W.; Ovartchaiyapong, P.; Bleszynski Jayich, A. C.

Several experiments have recently demonstrated coupling between nitrogen vacancy (NV) centers in diamond and mechanical resonators via crystal strain. In the strong coupling regime, such devices could realize applications critical to emerging quantum technologies, including phonon-mediated spin-spin interactions and mechanical cooling with the NV center1. An outstanding challenge for these devices is generating higher strain coupling in high frequency devices while maintaining the excellent coherence properties of the NV center and high mechanical quality factors. As a step toward these objectives, we demonstrate single-crystal diamond optomechanical crystal resonators with embedded NV centers. These devices host highly-confined GHz-scale mechanical modes that are isolated from mechanical clamping losses and generate strain profiles that allow for large strain coupling to NV centers far from noise-inducing surfaces.

Comprehensive photonics-electronics convergent simulation and its application to high-speed electronic circuit integration on a Si/Ge photonic chip

NASA Astrophysics Data System (ADS)

Takeda, Kotaro; Honda, Kentaro; Takeya, Tsutomu; Okazaki, Kota; Hiraki, Tatsurou; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Fukuda, Hiroshi; Usui, Mitsuo; Nosaka, Hideyuki; Yamamoto, Tsuyoshi; Yamada, Koji

2015-01-01

We developed a design technique for a photonics-electronics convergence system by using an equivalent circuit of optical devices in an electrical circuit simulator. We used the transfer matrix method to calculate the response of an optical device. This method used physical parameters and dimensions of optical devices as calculation parameters to design a device in the electrical circuit simulator. It also used an intermediate frequency to express the wavelength dependence of optical devices. By using both techniques, we simulated bit error rates and eye diagrams of optical and electrical integrated circuits and calculated influences of device structure change and wavelength shift penalty.

High-frequency electromagnetic properties of soft magnetic metal-polyimide hybrid thin films

NASA Astrophysics Data System (ADS)

Kim, Sang Woo; Yoon, Chong S.

2007-09-01

Although there are a lot of demands for suppression of unwanted high-frequency electromagnetic noise in highly integrated electronic devices such as mobile phones and notebook computers, electromagnetic thin films that effectively work in the high-frequency range have still been underdeveloped. Soft magnetic metal-polyimide (PI) hybrid films with high electrical resistivity were prepared by thermal imidization and selective oxidation between the metal alloy layer and polyamic acid (PAA) layer. Electromagnetic properties of the hybrid thin films in the radio-frequency range were characterized by using the microstrip line method and were correlated with their material parameters. Although anisotropy field of the CoFe/NiFe hybrid film was two times lower than that of the NiFe hybrid film, the saturation magnetization of the CoFe/NiFe hybrid film was three times higher than that of the NiFe hybrid film. The CoFe/NiFe hybrid film showed higher power loss in the frequency range of 3-6 GHz compared to the NiFe hybrid film. The high power loss of the CoFe/NiFe hybrid film was caused by high relative permeability and high ferromagnetic resonance (FMR) frequency due to high saturation magnetization.

Time-Gating Processes in Intra-Cavity Mode-Locking Devices Like Saturable Absorbers and Kerr Cells

NASA Technical Reports Server (NTRS)

Prasad, Narasimha; Roychoudhuri, Chandrasekhar

2010-01-01

Photons are non-interacting entities. Light beams do not interfere by themselves. Light beams constituting different laser modes (frequencies) are not capable of re-arranging their energies from extended time-domain to ultra-short time-domain by themselves without the aid of light-matter interactions with suitable intra-cavity devices. In this paper we will discuss the time-gating properties of intra-cavity "mode-locking" devices that actually help generate a regular train of high energy wave packets.

Study to evaluate the effect of low-intensity pulsed electrical currents on levels of oedema in chronic non-healing wounds.

PubMed

Young, S; Hampton, S; Tadej, M

2011-08-01

To evaluate the efficacy of a medical device, Accel-Heal, which generates a low-intensity pulsed direct current, on the management of oedema in chronic leg ulcers, using high-frequency diagnostic ultrasound. High-frequency diagnostic ultrasound (20MHz) with an axial resolution of 60um was used to assess the effect of an electrical stimulation device delivering a low-intensity pulsed current on levels of oedema in chronic non-healing venous and mixed aetiology leg ulcers for a period of 10 days. Thirty patients' wounds were monitored over a 3-month period, during which time changes in levels of oedema in the wound bed and surrounding tissues were imaged and measured. A significant fall in the, previously high level, of periwound oedema was noted in the patient population after 10 days of device application. By 20 days after the first application of the device the level of periwound oedema had decreased by approximately 60% of the original level, which was maintained up to the 90-day follow-up. Occurring in parallel with this, scans of the wound bed showed a rapid decrease in the levels of oedema as the new wound matrix was laid down. The electrical stimulation device appeared to be effective in reducing oedema levels in a range of chronic wounds and their surrounding tissues. The study was funded by a grant from Synapse micro-current Ltd.

Graphene-on-paper sound source devices.

PubMed

Tian, He; Ren, Tian-Ling; Xie, Dan; Wang, Yu-Feng; Zhou, Chang-Jian; Feng, Ting-Ting; Fu, Di; Yang, Yi; Peng, Ping-Gang; Wang, Li-Gang; Liu, Li-Tian

2011-06-28

We demonstrate an interesting phenomenon that graphene can emit sound. The application of graphene can be expanded in the acoustic field. Graphene-on-paper sound source devices are made by patterning graphene on paper substrates. Three graphene sheet samples with the thickness of 100, 60, and 20 nm were fabricated. Sound emission from graphene is measured as a function of power, distance, angle, and frequency in the far-field. The theoretical model of air/graphene/paper/PCB board multilayer structure is established to analyze the sound directivity, frequency response, and efficiency. Measured sound pressure level (SPL) and efficiency are in good agreement with theoretical results. It is found that graphene has a significant flat frequency response in the wide ultrasound range 20-50 kHz. In addition, the thinner graphene sheets can produce higher SPL due to its lower heat capacity per unit area (HCPUA). The infrared thermal images reveal that a thermoacoustic effect is the working principle. We find that the sound performance mainly depends on the HCPUA of the conductor and the thermal properties of the substrate. The paper-based graphene sound source devices have highly reliable, flexible, no mechanical vibration, simple structure and high performance characteristics. It could open wide applications in multimedia, consumer electronics, biological, medical, and many other areas.

Microwave frequency tuning in heterogeneous spin torque oscillator with perpendicular polarizer: A macrospin study

NASA Astrophysics Data System (ADS)

Bhoomeeswaran, H.; Vivek, T.; Sabareesan, P.

2018-04-01

In this article, we have theoretically devised a Spin Torque Nano Oscillator (STNO) with perpendicular polarizer using macro spin model. The devised spin valve structure is heterogeneous (i.e.) it is made of two different ferromagnetic materials [Co and its alloy CoFeB]. The dynamics of magnetization provoked by spin transfer torque is studied numerically by solving the famous Landau-Lifshitz-Gilbert-Slonczewski [LLGS] equation. The results are obtained for the perpendicular polarizer and for that particular out of plane orientation we vary the free layer angle from 10° to 90°. The obtained results are highly appealing, because frequency range is available in all the tilt angles of free layer and it is exceptionally tunable in all free layer tilt angles with zero applied field. Moreover, the utmost operating frequency of about 83.3 GHz and its corresponding power of 4.488 µW/mA2/GHz is acquired for the free layer tilt angle θ = 90° with the solid applied current density of 10 × 1010 A/m2. Also, our device emits high quality factor of about 396, which is remarkably desirable for making devices. These pioneering results provides a significant development for future spintronic based devices.

Compensating for Tissue Changes in an Ultrasonic Power Link for Implanted Medical Devices.

PubMed

Vihvelin, Hugo; Leadbetter, Jeff; Bance, Manohar; Brown, Jeremy A; Adamson, Robert B A

2016-04-01

Ultrasonic power transfer using piezoelectric devices is a promising wireless power transfer technology for biomedical implants. However, for sub-dermal implants where the separation between the transmitter and receiver is on the order of several acoustic wavelengths, the ultrasonic power transfer efficiency (PTE) is highly sensitive to the distance between the transmitter and receiver. This sensitivity can cause large swings in efficiency and presents a serious limitation on battery life and overall performance. A practical ultrasonic transcutaneous energy transfer (UTET) system design must accommodate different implant depths and unpredictable acoustic changes caused by tissue growth, hydration, ambient temperature, and movement. This paper describes a method used to compensate for acoustic separation distance by varying the transmit (Tx) frequency in a UTET system. In a benchtop UTET system we experimentally show that without compensation, power transfer efficiency can range from 9% to 25% as a 5 mm porcine tissue sample is manipulated to simulate in situ implant conditions. Using an active frequency compensation method, we show that the power transfer efficiency can be kept uniformly high, ranging from 20% to 27%. The frequency compensation strategy we propose is low-power, non-invasive, and uses only transmit-side measurements, making it suitable for active implanted medical device applications.

Development of a wearable multi-frequency impedance cardiography device.

PubMed

Weyer, Sören; Menden, Tobias; Leicht, Lennart; Leonhardt, Steffen; Wartzek, Tobias

2015-02-01

Cardiovascular diseases as well as pulmonary oedema can be early diagnosed using vital signs and thoracic bio-impedance. By recording the electrocardiogram (ECG) and the impedance cardiogram (ICG), vital parameters are captured continuously. The aim of this study is the continuous monitoring of ECG and multi-frequency ICG by a mobile system. A mobile measuring system, based on 'low-power' ECG, ICG and an included radio transmission is described. Due to the high component integration, a board size of only 6.5 cm×5 cm could be realized. The measured data can be transmitted via Bluetooth and visualized on a portable monitor. By using energy-efficient hardware, the system can operate for up to 18 hs with a 3 V battery, continuously sending data via Bluetooth. Longer operating times can be realized by decreased transfer rates. The relative error of the impedance measurement was less than 1%. The ECG and ICG measurements allow an approximate calculation of the heart stroke volume. The ECG and the measured impedance showed a high correlation to commercial devices (r=0.83, p<0.05). In addition to commercial devices, the developed system allows a multi-frequency measurement of the thoracic impedance between 5-150 kHz.

Flexible, High-Speed CdSe Nanocrystal Integrated Circuits.

PubMed

Stinner, F Scott; Lai, Yuming; Straus, Daniel B; Diroll, Benjamin T; Kim, David K; Murray, Christopher B; Kagan, Cherie R

2015-10-14

We report large-area, flexible, high-speed analog and digital colloidal CdSe nanocrystal integrated circuits operating at low voltages. Using photolithography and a newly developed process to fabricate vertical interconnect access holes, we scale down device dimensions, reducing parasitic capacitances and increasing the frequency of circuit operation, and scale up device fabrication over 4 in. flexible substrates. We demonstrate amplifiers with ∼7 kHz bandwidth, ring oscillators with <10 μs stage delays, and NAND and NOR logic gates.

Resonant tunneling diode oscillators for optical communications

NASA Astrophysics Data System (ADS)

Watson, Scott; Zhang, Weikang; Wang, Jue; Al-Khalidi, Abdullah; Cantu, Horacio; Figueiredo, Jose; Wasige, Edward; Kelly, Anthony E.

2017-08-01

The ability to use resonant tunneling diodes (RTDs) as both transmitters and receivers is an emerging topic, especially with regards to wireless communications. Successful data transmission has been achieved using electronic RTDs with carrier frequencies exceeding 0.3 THz. Specific optical-based RTDs, which act as photodetectors, have been developed by adjusting the device structure to include a light absorption layer and small optical windows on top of the device to allow direct optical access. This also allows the optical signal to directly modulate the RTD oscillation. Both types of RTD oscillators will allow for seamless integration of high frequency radio and optical fiber networks.

Note: Force- and torque-detection of high frequency electron spin resonance using a membrane-type surface-stress sensor

NASA Astrophysics Data System (ADS)

Takahashi, Hideyuki; Ishimura, Kento; Okamoto, Tsubasa; Ohmichi, Eiji; Ohta, Hitoshi

2018-03-01

We developed a practical useful method for force- and torque-detected electron spin resonance (FDESR/TDESR) spectroscopy in the millimeter wave frequency region. This method uses a commercially available membrane-type surface-stress (MSS) sensor. The MSS is composed of a silicon membrane supported by four beams in which piezoresistive paths are integrated for detecting the deformation of the membrane. Although this device has a lower spin sensitivity than a microcantilever, it offers several distinct advantages, including mechanical strength, ease of use, and versatility. These advantages make this device suitable for practical applications that require FDESR/TDESR.

Power SiGe Heterojunction Bipolar Transistors (HBTs) Fabricated by Fully Self-Aligned Double Mesa Technology

NASA Technical Reports Server (NTRS)

Lu, Liang-Hung; Mohammadi, Saeed; Ma, Zhen-Qiang; Ponchak, George E.; Alterovitz, Samuel A.; Strohm, Karl M.; Luy, Johann-Friedrich; Downey, Alan (Technical Monitor)

2001-01-01

Multifinger SiGe HBTs have been fabricated using a novel fully self-aligned double-mesa technology. With the novel process technology, a common-emitter 2x2x30 sq micrometer device exhibits high maximum oscillating frequency (f(sub max)) and cut-off frequency (f(sub T)) of 78 and 37 GHz, respectively. In class-A operation, a multifinger device with l0x2x30 sq micrometer emitter is expected to provide an output power of 25.6 dBm with a gain of 10 dB and a maximum power added efficiency (PAE) of 30.33% at 8 GHz.

Linear transmitter design for MSAT terminals

NASA Technical Reports Server (NTRS)

Wilkinson, Ross; Macleod, John; Beach, Mark; Bateman, Andrew

1990-01-01

One of the factors that will undoubtedly influence the choice of modulation format for mobile satellites, is the availability of cheap, power-efficient, linear amplifiers for mobile terminal equipment operating in the 1.5-1.7 GHz band. Transmitter linearity is not easily achieved at these frequencies, although high power (20W) class A/AB devices are becoming available. However, these components are expensive and require careful design to achieve a modest degree of linearity. In this paper an alternative approach to radio frequency (RF) power amplifier design for mobile satellite (MSAT) terminals using readily-available, power-efficient, and cheap class C devices in a feedback amplifier architecture is presented.

Development of a 3D Graphene Electrode Dielectrophoretic Device

PubMed Central

Xie, Hongyu; Tewari, Radheshyam; Fukushima, Hiroyuki; Narendra, Jeffri; Heldt, Caryn; King, Julia; Minerick, Adrienne R.

2014-01-01

The design and fabrication of a novel 3D electrode microdevice using 50 µm thick graphene paper and 100 µm double sided tape is described. The protocol details the procedures to construct a versatile, reusable, multiple layer, laminated dielectrophoresis chamber. Specifically, six layers of 50 µm x 0.7 cm x 2 cm graphene paper and five layers of double sided tape were alternately stacked together, then clamped to a glass slide. Then a 700 μm diameter micro-well was drilled through the laminated structure using a computer-controlled micro drilling machine. Insulating properties of the tape layer between adjacent graphene layers were assured by resistance tests. Silver conductive epoxy connected alternate layers of graphene paper and formed stable connections between the graphene paper and external copper wire electrodes. The finished device was then clamped and sealed to a glass slide. The electric field gradient was modeled within the multi-layer device. Dielectrophoretic behaviors of 6 μm polystyrene beads were demonstrated in the 1 mm deep micro-well, with medium conductivities ranging from 0.0001 S/m to 1.3 S/m, and applied signal frequencies from 100 Hz to 10 MHz. Negative dielectrophoretic responses were observed in three dimensions over most of the conductivity-frequency space and cross-over frequency values are consistent with previously reported literature values. The device did not prevent AC electroosmosis and electrothermal flows, which occurred in the low and high frequency regions, respectively. The graphene paper utilized in this device is versatile and could subsequently function as a biosensor after dielectrophoretic characterizations are complete. PMID:24998694

The dielectric properties of human pineal gland tissue and RF absorption due to wireless communication devices in the frequency range 400-1850 MHz.

PubMed

Schmid, Gernot; Uberbacher, Richard; Samaras, Theodoros; Tschabitscher, Manfred; Mazal, Peter R

2007-09-07

In order to enable a detailed analysis of radio frequency (RF) absorption in the human pineal gland, the dielectric properties of a sample of 20 freshly removed pineal glands were measured less than 20 h after death. Furthermore, a corresponding high resolution numerical model of the brain region surrounding the pineal gland was developed, based on a real human tissue sample. After inserting this model into a commercially available numerical head model, FDTD-based computations for exposure scenarios with generic models of handheld devices operated close to the head in the frequency range 400-1850 MHz were carried out. For typical output power values of real handheld mobile communication devices, the obtained results showed only very small amounts of absorbed RF power in the pineal gland when compared to SAR limits according to international safety standards. The highest absorption was found for the 400 MHz irradiation. In this case the RF power absorbed inside the pineal gland (organ mass 96 mg) was as low as 11 microW, when considering a device of 500 mW output power operated close to the ear. For typical mobile phone frequencies (900 MHz and 1850 MHz) and output power values (250 mW and 125 mW) the corresponding values of absorbed RF power in the pineal gland were found to be lower by a factor of 4.2 and 36, respectively. These results indicate that temperature-related biologically relevant effects on the pineal gland induced by the RF emissions of typical handheld mobile communication devices are unlikely.

Development of a 3D graphene electrode dielectrophoretic device.

PubMed

Xie, Hongyu; Tewari, Radheshyam; Fukushima, Hiroyuki; Narendra, Jeffri; Heldt, Caryn; King, Julia; Minerick, Adrienne R

2014-06-22

The design and fabrication of a novel 3D electrode microdevice using 50 µm thick graphene paper and 100 µm double sided tape is described. The protocol details the procedures to construct a versatile, reusable, multiple layer, laminated dielectrophoresis chamber. Specifically, six layers of 50 µm x 0.7 cm x 2 cm graphene paper and five layers of double sided tape were alternately stacked together, then clamped to a glass slide. Then a 700 μm diameter micro-well was drilled through the laminated structure using a computer-controlled micro drilling machine. Insulating properties of the tape layer between adjacent graphene layers were assured by resistance tests. Silver conductive epoxy connected alternate layers of graphene paper and formed stable connections between the graphene paper and external copper wire electrodes. The finished device was then clamped and sealed to a glass slide. The electric field gradient was modeled within the multi-layer device. Dielectrophoretic behaviors of 6 μm polystyrene beads were demonstrated in the 1 mm deep micro-well, with medium conductivities ranging from 0.0001 S/m to 1.3 S/m, and applied signal frequencies from 100 Hz to 10 MHz. Negative dielectrophoretic responses were observed in three dimensions over most of the conductivity-frequency space and cross-over frequency values are consistent with previously reported literature values. The device did not prevent AC electroosmosis and electrothermal flows, which occurred in the low and high frequency regions, respectively. The graphene paper utilized in this device is versatile and could subsequently function as a biosensor after dielectrophoretic characterizations are complete.

Optical Injection Locking of Vertical Cavity Surface-Emitting Lasers: Digital and Analog Applications

NASA Astrophysics Data System (ADS)

Parekh, Devang

With the rise of mobile (cellphones, tablets, notebooks, etc.) and broadband wireline communications (Fiber to the Home), there are increasing demands being placed on transmitters for moving data from device to device and around the world. Digital and analog fiber-optic communications have been the key technology to meet this challenge, ushering in ubiquitous Internet and cable TV over the past 20 years. At the physical layer, high-volume low-cost manufacturing of semiconductor optoelectronic devices has played an integral role in allowing for deployment of high-speed communication links. In particular, vertical cavity surface emitting lasers (VCSEL) have revolutionized short reach communications and are poised to enter more markets due to their low cost, small size, and performance. However, VCSELs have disadvantages such as limited modulation performance and large frequency chirp which limits fiber transmission speed and distance, key parameters for many fiber-optic communication systems. Optical injection locking is one method to overcome these limitations without re-engineering the VCSEL at the device level. By locking the frequency and phase of the VCSEL by the direct injection of light from another laser oscillator, improved device performance is achieved in a post-fabrication method. In this dissertation, optical injection locking of VCSELs is investigated from an applications perspective. Optical injection locking of VCSELs can be used as a pathway to reduce complexity, cost, and size of both digital and analog fiber-optic communications. On the digital front, reduction of frequency chirp via bit pattern inversion for large-signal modulation is experimentally demonstrated showing up to 10 times reduction in frequency chirp and over 90 times increase in fiber transmission distance. Based on these results, a new reflection-based interferometric model for optical injection locking was established to explain this phenomenon. On the analog side, the resonance frequency enhancement was exploited for millimeter-wave radio over fiber communications. Experimental demonstration of 4 Gb/s data transmission over 20 km of fiber and 3 m of wireless transmission at a 60 GHz carrier frequency was achieved. Additionally, optical injection of multi-transverse mode (MM) VCSELs was investigated showing record resonance frequency enhancement of > 54 GHz and 3-dB bandwidth of 38 GHz. Besides these applications, a number of other intriguing applications are also discussed, including an optoelectronic oscillator (OEO) and wavelength-division multiplexed passive optical networks (WDM-PON). Finally, the future of optical injection locking and its direction going forward will be discussed.

Remote tire pressure sensing technique

NASA Technical Reports Server (NTRS)

Robinson, Howard H. (Inventor); Mcginnis, Timothy A. (Inventor); Daugherty, Robert H. (Inventor)

1993-01-01

A remote tire pressure sensing technique is provided which uses vibration frequency to determine tire pressure. A vibration frequency measuring device is attached to the external surface of a tire which is then struck with an object, causing the tire to vibrate. The frequency measuring device measures the vibrations and converts the vibrations into corresponding electrical impulses. The electrical impulses are then fed into the frequency analyzing system which uses the electrical impulses to determine the relative peaks of the vibration frequencies as detected by the frequency measuring device. The measured vibration frequency peaks are then compared to predetermined data describing the location of vibration frequency peaks for a given pressure, thereby determining the air pressure of the tire.

21 CFR 884.4150 - Bipolar endoscopic coagulator-cutter and accessories.

Code of Federal Regulations, 2014 CFR

2014-04-01

... high frequency electrical current through tissue between two electrical contacts of a probe. This generic type of device may include the following accessories: an electrical generator, probes, and...

21 CFR 884.4150 - Bipolar endoscopic coagulator-cutter and accessories.

Code of Federal Regulations, 2012 CFR

2012-04-01

... high frequency electrical current through tissue between two electrical contacts of a probe. This generic type of device may include the following accessories: an electrical generator, probes, and...

21 CFR 884.4150 - Bipolar endoscopic coagulator-cutter and accessories.

Code of Federal Regulations, 2011 CFR

2011-04-01

... high frequency electrical current through tissue between two electrical contacts of a probe. This generic type of device may include the following accessories: an electrical generator, probes, and...

21 CFR 884.4150 - Bipolar endoscopic coagulator-cutter and accessories.

Code of Federal Regulations, 2013 CFR

2013-04-01

... high frequency electrical current through tissue between two electrical contacts of a probe. This generic type of device may include the following accessories: an electrical generator, probes, and...

Dependence of the colored frequency noise in spin torque oscillators on current and magnetic field

NASA Astrophysics Data System (ADS)

Eklund, Anders; Bonetti, Stefano; Sani, Sohrab R.; Majid Mohseni, S.; Persson, Johan; Chung, Sunjae; Amir Hossein Banuazizi, S.; Iacocca, Ezio; Östling, Mikael; Åkerman, Johan; Gunnar Malm, B.

2014-03-01

The nano-scale spin torque oscillator (STO) is a compelling device for on-chip, highly tunable microwave frequency signal generation. Currently, one of the most important challenges for the STO is to increase its longer-time frequency stability by decreasing the 1/f frequency noise, but its high level makes even its measurement impossible using the phase noise mode of spectrum analyzers. Here, we present a custom made time-domain measurement system with 150 MHz measurement bandwidth making possible the investigation of the variation of the 1/f as well as the white frequency noise in a STO over a large set of operating points covering 18-25 GHz. The 1/f level is found to be highly dependent on the oscillation amplitude-frequency non-linearity and the vicinity of unexcited oscillation modes. These findings elucidate the need for a quantitative theoretical treatment of the low-frequency, colored frequency noise in STOs. Based on the results, we suggest that the 1/f frequency noise possibly can be decreased by improving the microstructural quality of the metallic thin films.

Digital frequency-offset detector

NASA Technical Reports Server (NTRS)

Bogart, R. W.; Juengst, M. J.

1977-01-01

Simple, low-cost device with designer-selectable tolerances provides accurate frequency comparison with minimal circuitry and ease of adjustment. Warning alerts if frequencies being compared fall outside selected tolerance. Device can be applied to any electronic system where accurate timing or frequency control is important.

RF rectifiers for EM power harvesting in a Deep Brain Stimulating device.

PubMed

Hosain, Md Kamal; Kouzani, Abbas Z; Tye, Susannah; Kaynak, Akif; Berk, Michael

2015-03-01

A passive deep brain stimulation (DBS) device can be equipped with a rectenna, consisting of an antenna and a rectifier, to harvest energy from electromagnetic fields for its operation. This paper presents optimization of radio frequency rectifier circuits for wireless energy harvesting in a passive head-mountable DBS device. The aim is to achieve a compact size, high conversion efficiency, and high output voltage rectifier. Four different rectifiers based on the Delon doubler, Greinacher voltage tripler, Delon voltage quadrupler, and 2-stage charge pumped architectures are designed, simulated, fabricated, and evaluated. The design and simulation are conducted using Agilent Genesys at operating frequency of 915 MHz. A dielectric substrate of FR-4 with thickness of 1.6 mm, and surface mount devices (SMD) components are used to fabricate the designed rectifiers. The performance of the fabricated rectifiers is evaluated using a 915 MHz radio frequency (RF) energy source. The maximum measured conversion efficiency of the Delon doubler, Greinacher tripler, Delon quadrupler, and 2-stage charge pumped rectifiers are 78, 75, 73, and 76 % at -5 dBm input power and for load resistances of 5-15 kΩ. The conversion efficiency of the rectifiers decreases significantly with the increase in the input power level. The Delon doubler rectifier provides the highest efficiency at both -5 and 5 dBm input power levels, whereas the Delon quadrupler rectifier gives the lowest efficiency for the same inputs. By considering both efficiency and DC output voltage, the charge pump rectifier outperforms the other three rectifiers. Accordingly, the optimised 2-stage charge pumped rectifier is used together with an antenna to harvest energy in our DBS device.

High Q-factor metasurfaces based on miniaturized asymmetric single split resonators

NASA Astrophysics Data System (ADS)

Al-Naib, Ibraheem A. I.; Jansen, Christian; Koch, Martin

2009-04-01

We introduce asymmetric single split rectangular resonators as bandstop metasurfaces, which exhibit very high Q-factors in combination with low passband losses and a small electrical footprint. The effect of the degree of asymmetry on the frequency response is thoroughly studied. Furthermore, complementary structures, which feature a bandpass behavior, were derived by applying Babinet's principle and investigated with regards to their transmission characteristics. In future, asymmetric single split rectangular resonators could provide efficient unit cells for frequency selective surface devices, such as thin-film sensors or high performance filters.

Preface: Heterostructure terahertz devices

NASA Astrophysics Data System (ADS)

Ryzhii, Victor

2008-08-01

The terahertz (THz) range of frequencies is borderline between microwave electronics and photonics. It corresponds to the frequency bands of molecular and lattice vibrations in gases, fluids, and solids. The importance of the THz range is in part due to numerous potential and emerging applications which include imaging and characterization, detection of hazardous substances, environmental monitoring, radio astronomy, covert inter-satellite communications, as well as biological and medical applications. During the last decades marked progress has been achieved in the development, fabrication, and practical implementation of THz devices and systems. This is primarily owing to the utilization of gaseous and free electron lasers and frequency converters using nonlinear optical phenomena as sources of THz radiation. However, such devices and hence the systems based on them are fairly cumbersome. This continuously stimulates an extensive search for new compact and efficient THz sources based on semiconductor heterostructures. Despite tremendous efforts lasting several decades, the so-called THz gap unbridged by semiconductor heterostructure electron and optoelectron devices still exists providing appropriate levels of power of the generated THz radiation. The invention and realization of quantum cascade lasers made of multiple quantum-well heterostructures already resulted in the partial solution of the problem in question, namely, in the successful coverage of the high-frequency portion of the THz gap (2-3 THz and higher). Further advancement to lower frequencies meets, perhaps, fundamental difficulties. All this necessitates further extensive theoretical and experimental studies of more or less traditional and novel semiconductor heterostructures as a basis for sources of THz radiation. This special issue includes 11 excellent original papers submitted by several research teams representing 14 institutions in Europe, America, and Asia. Several device concepts which appear to be feasible for the realization of novel THz devices are put forward and discussed in this collection of experimental and theoretical papers. The issue starts with a paper by Akis et al which deals with a theoretical study of the operation of high electron mobility transistors at THz frequencies. For this, the authors use the numerical simulations using a full-band, cellular Monte Carlo transport model coupled to a full Poisson equation solver. The next three papers by Reklaitis, Balocco et al , and Mikhailov and Zieglel are devoted to considering new ideas related to frequency multiplication which can lead to the up-conversion of ac signals to THz frequencies. For this purpose, different concepts of the devices based on nontrivial heterostructures and materials are proposed and studied. The paper by Knap et al provides an overview of the authors experimental results on the plasma effects infield effect transistors. These effects can be used for the resonant detection of THz radiation and its emission. The observed THz emission from more complex device structures, namely, dual grating gate heterostrucures, which is attributed to the self-excitation of plasma waves, is discussed by Otsuji and his co-workers. The following two papers (by Ryzhii et al and Popov et al) deal with the development of device models and using the one which could explain the results of experimental observations described in the paper by Otsuji et al . In both these papers, the mechanisms of plasma wave instability in spatially periodic heterostructures are analyzed. In the paper by Starikov and his colleagues, an idea to utilize the transit-time resonance assisted by optical phonon emissionis revived and revisited. As demonstrated, this mechanism in the electron system in nitride-made heterostructures can lead to negative dynamic conductivity in the THz range of frequencies and, hence, be used for the generation of THz radiation. In the paper by Millithaler et al, Monte Carlo simulations are used to study the voltage fluctuationsaffected by the plasma oscillations in two-terminal heterostructures with an n-type InGaAs channel.Finally, the paper by Liu {\\it et al} is devoted to the concept of quantum cascade THz lasers using resonant tunneling in quantum dot systems instead of the standard multiple quantum well heterostructures.I would like to express my deep gratitude to all of the authors for having submitted high-quality papers. I am confident that this special issue will substantially promote further progress in THz technology.

Rydberg-atom based radio-frequency electrometry using frequency modulation spectroscopy in room temperature vapor cells.

PubMed

Kumar, Santosh; Fan, Haoquan; Kübler, Harald; Jahangiri, Akbar J; Shaffer, James P

2017-04-17

Rydberg atom-based electrometry enables traceable electric field measurements with high sensitivity over a large frequency range, from gigahertz to terahertz. Such measurements are particularly useful for the calibration of radio frequency and terahertz devices, as well as other applications like near field imaging of electric fields. We utilize frequency modulated spectroscopy with active control of residual amplitude modulation to improve the signal to noise ratio of the optical readout of Rydberg atom-based radio frequency electrometry. Matched filtering of the signal is also implemented. Although we have reached similarly, high sensitivity with other read-out methods, frequency modulated spectroscopy is advantageous because it is well-suited for building a compact, portable sensor. In the current experiment, ∼3 µV cm^-1 Hz^-1/2 sensitivity is achieved and is found to be photon shot noise limited.

A wide-range programmable frequency synthesizer based on a finite state machine filter

NASA Astrophysics Data System (ADS)

Alser, Mohammed H.; Assaad, Maher M.; Hussin, Fawnizu A.

2013-11-01

In this article, an FPGA-based design and implementation of a fully digital wide-range programmable frequency synthesizer based on a finite state machine filter is presented. The advantages of the proposed architecture are that, it simultaneously generates a high frequency signal from a low frequency reference signal (i.e. synthesising), and synchronising the two signals (signals have the same phase, or a constant difference) without jitter accumulation issue. The architecture is portable and can be easily implemented for various platforms, such as FPGAs and integrated circuits. The frequency synthesizer circuit can be used as a part of SERDES devices in intra/inter chip communication in system-on-chip (SoC). The proposed circuit is designed using Verilog language and synthesized for the Altera DE2-70 development board, with the Cyclone II (EP2C35F672C6) device on board. Simulation and experimental results are included; they prove the synthesizing and tracking features of the proposed architecture. The generated clock signal frequency of a range from 19.8 MHz to 440 MHz is synchronized to the input reference clock with a frequency step of 0.12 MHz.

If it’s pinched it’s a memristor

NASA Astrophysics Data System (ADS)

Chua, Leon

2014-10-01

This paper presents an in-depth review of the memristor from a rigorous circuit-theoretic perspective, independent of the material the device is made of. From an experimental perspective, a memristor is best defined as any two-terminal device that exhibits a pinched hysteresis loop in the voltage-current plane when driven by any periodic voltage or current signal that elicits a periodic response of the same frequency. This definition greatly broadens the scope of memristive devices to encompass even non-semiconductor devices, both organic and inorganic, from many unrelated disciplines, including biology, botany, brain science, etc. For pedagogical reasons, the broad terrain of memristors is partitioned into three classes of increasing generality, dubbed Ideal Memristors, Generic Memristors, and Extended Memristors. Each class is distinguished from the others via unique fingerprints and signatures. This paper clarifies many confusing issues, such as non-volatility, dc V-I curves, high-frequency v-i curves, local activity, as well as nonlinear dynamical and bifurcation phenomena that are the hallmarks of memristive devices. Above all, this paper addresses several fundamental issues and questions that many memristor researchers do not comprehend but are afraid to ask.

Applicator for in-vitro ultrasound-activated targeted drug delivery

NASA Astrophysics Data System (ADS)

Gerold, B.; Gourevich, D.; Volovick, A.; Xu, D.; Arditti, F.; Prentice, P.; Cochran, S.; Gnaim, J.; Medan, Y.; Wang, L.; Melzer, A.

2012-10-01

Reducing toxicity and improving uptake of cancer drugs in tumors are important goals of targeted drug delivery (TDD). Ultrasonic drug release from various encapsulants has been a focus of many research groups. However, a single standard ultrasonic device, viable for use by biologists, is not currently present in the market. The device reported here is designed to allow investigation of the impact of ultrasound on cellular uptake and cell viability in-vitro. In it, single-element transducers with different operating frequencies are mounted below a standard 96-well plate. The plate is moved above the transducers, such that each line of wells can be sonicated at a different frequency. To assess the device, 96-well plates were seeded with cells and sonicated using different ultrasonic parameters, with and without doxorubicin. Cell viability was measured by colorimetric MTT assay and the uptake of doxorubicin by cells was also determined. The device proved to be highly viable in preliminary tests; it demonstrated that change in ultrasonic parameters produces different effect on cells. For example, increase in uptake of doxorubicin was demonstrated following ultrasound application. The growing interest in ultrasound-activated TDD emphasizes the need for standardization of the ultrasound device and the one reported here may offer some indications of how that may be achieved. It is planned to further improve the prototype by increasing the number of ultrasonic frequencies and degrees of freedom for each transducer.

Dynamic generation of concentration- and temporal-dependent chemical signals in an integrated microfluidic device for single-cell analysis.

PubMed

Gonzalez-Suarez, Alan Mauricio; Peña-Del Castillo, Johanna G; Hernandez-Cruz, Arturo; Garcia-Cordero, Jose Luis

2018-06-19

Intracellular signaling pathways are affected by the temporal nature of external chemical signaling molecules such as neuro-transmitters or hormones. Developing high-throughput technologies to mimic these time-varying chemical signals and to analyze the response of single cells would deepen our understanding of signaling networks. In this work, we introduce a microfluidic platform to stimulate hundreds of single cells with chemical waveforms of tunable frequency and amplitude. Our device produces a linear gradient of 9 concentrations that are delivered to an equal number of chambers, each containing 492 microwells, where individual cells are captured. The device can alternate between the different stimuli concentrations and a control buffer, with a maximum operating frequency of 33 mHz that can be adjusted from a computer. Fluorescent time-lapse microscopy enables to obtain hundreds of thousands of data points from one experiment. We characterized the gradient performance and stability by staining hundreds of cells with calcein AM. We also assessed the capacity of our device to introduce periodic chemical stimuli of different amplitudes and frequencies. To demonstrate our device performance, we studied the dynamics of intracellular Ca2+ release from intracellular stores of HEK cells when stimulated with carbachol at 4.5 and 20 mHz. Our work opens the possibility of characterizing the dynamic responses in real time of signaling molecules to time-varying chemical stimuli with single cell resolution.

Microwave monolithic filter and phase shifter using magnetic nanostructures

NASA Astrophysics Data System (ADS)

Aslam, Shehreen; Khanna, Manoj; Veenugopal, Veerakumar; Kuanr, Bijoy K.

2018-05-01

Monolithic Microwave Integrated Circuit (MMIC) have major impact on the development of microwave communication technology. Transition metal based ferromagnetic nano-wired (FMNWs) substrate are of special interest in order to fabricate these MMIC devices. Their saturation magnetization is comparatively higher than ferrites which makes them suitable for high frequency (>10 ˜ 40 GHz) operation at zero or a small applied magnetic field. The CoFeB nanowires in anodic alumina templates were synthesized using three-electrode electro-deposition system. After electro-deposition, 1μm thick Cu layer was sputtered on the top surface of FMNW substrate and lithography was done to design microstrip lines. These microstrip transmission lines were tested for band-stop filters and phase shifters based on ferromagnetic resonance (FMR) over a wide applied magnetic field (H) range. It was observed that attenuation and frequency increase with the increase of magnetic field (upto 5.3 kOe). For phase shifter, the influence of magnetic material was studied for two frequency regions: (i) below FMR and (ii) above FMR. These two frequency regions were suitable for many practical device applications as the insertion loss was very less in these regions in comparison to resonance frequency regions. In the high frequency region (at 35 GHz), the optimal differential phase shift increased significantly to ˜ 250 deg/cm and around low frequency region (at 24 GHz), the optimal differential phase shift is ˜175 deg/cm at the highest field (H) value.

Tunable short-wavelength spin wave excitation from pinned magnetic domain walls

PubMed Central

Van de Wiele, Ben; Hämäläinen, Sampo J.; Baláž, Pavel; Montoncello, Federico; van Dijken, Sebastiaan

2016-01-01

Miniaturization of magnonic devices for wave-like computing requires emission of short-wavelength spin waves, a key feature that cannot be achieved with microwave antennas. In this paper, we propose a tunable source of short-wavelength spin waves based on highly localized and strongly pinned magnetic domain walls in ferroelectric-ferromagnetic bilayers. When driven into oscillation by a microwave spin-polarized current, the magnetic domain walls emit spin waves with the same frequency as the excitation current. The amplitude of the emitted spin waves and the range of attainable excitation frequencies depend on the availability of domain wall resonance modes. In this respect, pinned domain walls in magnetic nanowires are particularly attractive. In this geometry, spin wave confinement perpendicular to the nanowire axis produces a multitude of domain wall resonances enabling efficient spin wave emission at frequencies up to 100 GHz and wavelengths down to 20 nm. At high frequency, the emission of spin waves in magnetic nanowires becomes monochromatic. Moreover, pinning of magnetic domain wall oscillators onto the same ferroelectric domain boundary in parallel nanowires guarantees good coherency between spin wave sources, which opens perspectives towards the realization of Mach-Zehnder type logic devices and sensors. PMID:26883893

47 CFR 15.202 - Certified operating frequency range.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 47 Telecommunication 1 2010-10-01 2010-10-01 false Certified operating frequency range. 15.202 Section 15.202 Telecommunication FEDERAL COMMUNICATIONS COMMISSION GENERAL RADIO FREQUENCY DEVICES Intentional Radiators § 15.202 Certified operating frequency range. Client devices that operate in a master...

Frequency-tunable superconducting resonators via nonlinear kinetic inductance

NASA Astrophysics Data System (ADS)

Vissers, M. R.; Hubmayr, J.; Sandberg, M.; Chaudhuri, S.; Bockstiegel, C.; Gao, J.

2015-08-01

We have designed, fabricated, and tested a frequency-tunable high-Q superconducting resonator made from a niobium titanium nitride film. The frequency tunability is achieved by injecting a DC through a current-directing circuit into the nonlinear inductor whose kinetic inductance is current-dependent. We have demonstrated continuous tuning of the resonance frequency in a 180 MHz frequency range around 4.5 GHz while maintaining the high internal quality factor Qi > 180 000. This device may serve as a tunable filter and find applications in superconducting quantum computing and measurement. It also provides a useful tool to study the nonlinear response of a superconductor. In addition, it may be developed into techniques for measurement of the complex impedance of a superconductor at its transition temperature and for readout of transition-edge sensors.

Integrated Power Adapter: Isolated Converter with Integrated Passives and Low Material Stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2010-09-01

ADEPT Project: CPES at Virginia Tech is developing an extremely efficient power converter that could be used in power adapters for small, lightweight laptops and other types of mobile electronic devices. Power adapters convert electrical energy into useable power for an electronic device, and they currently waste a lot of energy when they are plugged into an outlet to power up. CPES at Virginia Tech is integrating high-density capacitors, new magnetic materials, high-frequency integrated circuits, and a constant-flux transformer to create its efficient power converter. The high-density capacitors enable the power adapter to store more energy. The new magnetic materialsmore » also increase energy storage, and they can be precisely dispensed using a low-cost ink-jet printer which keeps costs down. The high-frequency integrated circuits can handle more power, and they can handle it more efficiently. And, the constant-flux transformer processes a consistent flow of electrical current, which makes the converter more efficient.« less

Communications Transceivers for Venus Surface Missions

NASA Technical Reports Server (NTRS)

Force, Dale A.

2004-01-01

The high temperature of the surface of Venus poses many difficulties. Previous Venus landers have only operated for short durations before succumbing to the heat. NASA Glenn Research Center conducted a study on communications for long duration Venus surface missions. I report the findings in this presentation. Current technology allows production of communications transceivers that can operate on the surface of Venus, at temperatures above 450 C and pressures of over 90 atmospheres. While these transceivers would have to be relatively simple, without much of the advanced signal processing often used in modern transceivers, since current and near future integrated circuits cannot operate at such high temperatures, the transceivers will be able to meet the requirements of proposed Venus Surface mission. The communication bands of interest are High Frequency or Very High Frequency (HFNHF) for communication between Venus surface and airborne probes (including surface to surface and air to air), and Ultra High Frequency (UHF) to Microwave bands for communication to orbiters. For HFNHF, transceivers could use existing vacuum tube technology. The packaging of the vacuum tubes may need modification, but the internal operating structure already operates at high temperatures. Using metal vacuum structures instead of glass, allows operation at high pressure. Wide bandgap transistors and diodes may be able to replace some of the thermionic components. VHF communications would be useful for line-of- sight operations, while HF would be useful for short-wave type communications using the Venusian ionosphere. UHF and microwave communications use magnetically focused thermionic devices, such as traveling wave tubes (TWTs), magnetron (M-type) amplifiers, and klystrons for high power amplifiers, and backward wave oscillators (BWOs) and reflex klystrons for oscillators. Permanent magnets are already in use in industry that can operate at 500 C. These magnets could focus electron beam tubes on the surface of Venus. While microwave windows will need to be designed for the high pressure, diamond windows have already been demonstrated, so high-pressure microwave windows can be designed and built. Thus, all of these devices could be useful for Venus surface missions. Current electronic power conditioners to supply the high voltages used in these microwave devices cannot operate at high temperatures, but earlier electronic power conditioners that used vacuum tubes can be modified to work at high temperature. Evaluating the various devices in this study, the M-type traveling wave tube (where a traveling wave structure is used in a crossed-field device, similar to the Amplitron used on the Apollo missions) stood out for the high power amplifier since it requires a single high voltage, simplifying the power supply design. Since the receiver amplifier is a low power amplifier, the loss of efficiency in linear beam devices without a depressed collector (and thus needing a single high voltage) is not important; a low noise TWT is a possible solution. Before solid-state microwave amplifiers were available, such TWTs were built with a 1-2 dB noise figure. A microwave triode or transistor made from a wide bandgap material may be preferable, if available. Much of the development work needed for Venusian communication devices will need to focus on the packaging of the devices, and their connections, but the technology is available to build transceivers that can operate on the surface of Venus indefinitely.

Ultrasonic speech translator and communications system

DOEpatents

Akerman, M.A.; Ayers, C.W.; Haynes, H.D.

1996-07-23

A wireless communication system undetectable by radio frequency methods for converting audio signals, including human voice, to electronic signals in the ultrasonic frequency range, transmitting the ultrasonic signal by way of acoustical pressure waves across a carrier medium, including gases, liquids, or solids, and reconverting the ultrasonic acoustical pressure waves back to the original audio signal. The ultrasonic speech translator and communication system includes an ultrasonic transmitting device and an ultrasonic receiving device. The ultrasonic transmitting device accepts as input an audio signal such as human voice input from a microphone or tape deck. The ultrasonic transmitting device frequency modulates an ultrasonic carrier signal with the audio signal producing a frequency modulated ultrasonic carrier signal, which is transmitted via acoustical pressure waves across a carrier medium such as gases, liquids or solids. The ultrasonic receiving device converts the frequency modulated ultrasonic acoustical pressure waves to a frequency modulated electronic signal, demodulates the audio signal from the ultrasonic carrier signal, and conditions the demodulated audio signal to reproduce the original audio signal at its output. 7 figs.

Electrically tunable superconducting terahertz metamaterial with low insertion loss and high switchable ratios

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Chun; Zhang, Caihong, E-mail: chzhang@nju.edu.cn; Hu, Guoliang

2016-07-11

With the emergence and development of artificially structured electromagnetic materials, active terahertz (THz) metamaterial devices have attracted significant attention in recent years. Tunability of transmission is desirable for many applications. For example, short-range wireless THz communications and ultrafast THz interconnects require switches and modulators. However, the tunable range of transmission amplitude of existing THz metamaterial devices is not satisfactory. In this article, we experimentally demonstrate an electrically tunable superconducting niobium nitride metamaterial device and employ a hybrid coupling model to analyze its optical transmission characteristics. The maximum transmission coefficient at 0.507 THz is 0.98 and decreases to 0.19 when themore » applied voltage increases to 0.9 V. A relative transmittance change of 80.6% is observed, making this device an efficient narrowband THz switch. Additionally, the frequency of the peak is red shifted from 0.507 to 0.425 THz, which means that the device can be used to select the frequency. This study offers an alternative tuning method to existing optical, thermal, magnetic-field, and electric-field tuning, delivering a promising approach for designing active and miniaturized THz devices.« less

High efficiency focus neutron generator

NASA Astrophysics Data System (ADS)

Sadeghi, H.; Amrollahi, R.; Zare, M.; Fazelpour, S.

2017-12-01

In the present paper, the new idea to increase the neutron yield of plasma focus devices is investigated and the results are presented. Based on many studies, more than 90% of neutrons in plasma focus devices were produced by beam target interactions and only 10% of them were due to thermonuclear reactions. While propounding the new idea, the number of collisions between deuteron ions and deuterium gas atoms were increased remarkably well. The COMSOL Multiphysics 5.2 was used to study the given idea in the known 28 plasma focus devices. In this circumstance, the neutron yield of this system was also obtained and reported. Finally, it was found that in the ENEA device with 1 Hz working frequency, 1.1 × 109 and 1.1 × 1011 neutrons per second were produced by D-D and D-T reactions, respectively. In addition, in the NX2 device with 16 Hz working frequency, 1.34 × 1010 and 1.34 × 1012 neutrons per second were produced by D-D and D-T reactions, respectively. The results show that with regards to the sizes and energy of these devices, they can be used as the efficient neutron generators.

Leakage current and capacitance characteristics of Si/SiO2/Si single-barrier varactor

NASA Astrophysics Data System (ADS)

Mamor, M.; Fu, Y.; Nur, O.; Willander, M.; Bengtsson, S.

We investigate, both experimentally and theoretically, current and capacitance (I-V/C-V) characteristics and the device performance of Si/SiO2/Si single-barrier varactor diodes (SBVs). Two diodes were fabricated with different SiO2 layer thicknesses using the state-of-the-art wafer bonding technique. The devices have very low leakage currents (about 5×10-2 and 1.8×10-2 mA/mm2) and intrinsic capacitance levels of typically 1.5 and 50 nF/mm2 for diodes with 5-nm and 20-nm oxide layers, respectively. With the present device physical parameters (25-mm2 device area, 760-μm modulation layer thickness and 1015-cm-3 doping level), the estimated cut-off frequency is about 5×107 Hz. With the physical parameters of the present existing III-V triplers, the cut-off frequency of our Si-based SBV can be as high as 0.5 THz.

Binding configurations and intramolecular strain in single-molecule devices.

PubMed

Rascón-Ramos, Habid; Artés, Juan Manuel; Li, Yuanhui; Hihath, Joshua

2015-05-01

The development of molecular-scale electronic devices has made considerable progress over the past decade, and single-molecule transistors, diodes and wires have all been demonstrated. Despite this remarkable progress, the agreement between theoretically predicted conductance values and those measured experimentally remains limited. One of the primary reasons for these discrepancies lies in the difficulty to experimentally determine the contact geometry and binding configuration of a single-molecule junction. In this Article, we apply a small-amplitude, high-frequency, sinusoidal mechanical signal to a series of single-molecule devices during junction formation and breakdown. By measuring the current response at this frequency, it is possible to determine the most probable binding and contact configurations for the molecular junction at room temperature in solution, and to obtain information about how an applied strain is distributed within the molecular junction. These results provide insight into the complex configuration of single-molecule devices, and are in excellent agreement with previous predictions from theoretical models.

Welding Experiments of Aluminum Alloy by Space GHTA Welding at ISS Orbital Pressure

NASA Astrophysics Data System (ADS)

Suita, Yoshikazu; Takai, Daisuke; Sugiyama, Satoshi; Terajima, Noboru; Tsukuda, Yoshiyuki; Fujisawa, Shoichiro; Imagawa, Kichiro

As a feasible welding method in space, the authors previously proposed the space GHTA (Gas Hollow Tungsten Arc) welding process. However, space GHTA welding with a high-frequency device for arc start may cause electromagnetic noise problems for the computer equipment placed on the ISS (International Space Station). Therefore, in this report, welding experiments of space GHTA welding using aluminum alloy with a high-voltage DC device for arc start were carried out at the ISS orbital pressure, 10-5 Pa. It is clear from the experiments using a high-voltage DC device in a high-vacuum condition, that there is a shifting phenomenon in which the spark discharge shifts to either a glow discharge or an arc discharge when starting the arc. Welding projects in space need an arc discharge, so we investigated the effects of welding parameters on the arc formation ratio. As a result, space GHTA welding with a high-voltage DC device can be used for arc start when welding at the ISS orbital pressure.

47 CFR 2.1204 - Import conditions.

Code of Federal Regulations, 2011 CFR

2011-10-01

... generations of a particular model under development are considered to be separate devices. (4) The radio... particular model under development are considered to be separate devices. (5) The radio frequency device is... offered for sale or marketed. (9) The radio frequency device is a medical implant transmitter inserted in...

47 CFR 2.1204 - Import conditions.

Code of Federal Regulations, 2010 CFR

2010-10-01

... generations of a particular model under development are considered to be separate devices. (4) The radio... particular model under development are considered to be separate devices. (5) The radio frequency device is... offered for sale or marketed. (9) The radio frequency device is a medical implant transmitter inserted in...

R&D100: LED Pulser

ScienceCinema

Pickett, Lyle; Manin, Julien; Eagle, Ethan

2018-06-12

A Sandia National Laboratories' light emitting diode (LED) driver is generating light pulses with shorter duration higher repetition frequency and higher brightness than anything on the market. The Sandia LED Pulser uses custom electronic circuitry to drive high-power LEDs to generate short, bright, high frequency light pulses. A single device can emit up to four different colors - each with independent pulse timing - crucial for light-beam forming in many optical applications and is more economical than current light sources such as lasers.

Collaborative designing and job satisfaction of airplane manufacturing engineers: A case study

NASA Astrophysics Data System (ADS)

Johnson, Michael David, Sr.

The group III-nitride system of materials has had considerable commercial success in recent years in the solid state lighting (SSL) and power electronics markets. The need for high efficient general lighting applications has driven research into InGaN based blue light emitting diodes (LEDs), and demand for more efficient power electronics for telecommunications has driven research into AlGaN based high electron mobility transistors (HEMTs). However, the group III-nitrides material properties make them attractive for several other applications that have not received as much attention. This work focuses on developing group III-nitride based devices for novel applications. GaN is a robust, chemically inert, piezoelectric material, making it an ideal candidate for surface acoustic wave (SAW) devices designed for high temperature and/or harsh environment sensors. In this work, SAW devices based on GaN are developed for use in high temperature gas or chemical sensor applications. To increase device sensitivity, while maintaining a simple one-step photolithography fabrication process, devices were designed to operate at high harmonic frequencies. This allows for GHz regime operation without sub-micron fabrication. One potential market for this technology is continuous emissions monitoring of combustion gas vehicles. In addition to SAW devices, high electron mobility transistors (HEMTs) were developed. The epitaxial structure was characterized and the 2-D electron gas concentrations were simulated and compared to experimental results. Device fabrication processes were developed and are outlined. Fabricated devices were electrically measured and device performance is discussed.

Review on analog/radio frequency performance of advanced silicon MOSFETs

NASA Astrophysics Data System (ADS)

Passi, Vikram; Raskin, Jean-Pierre

2017-12-01

Aggressive gate-length downscaling of the metal-oxide-semiconductor field-effect transistor (MOSFET) has been the main stimulus for the growth of the integrated circuit industry. This downscaling, which has proved beneficial to digital circuits, is primarily the result of the need for improved circuit performance and cost reduction and has resulted in tremendous reduction of the carrier transit time across the channel, thereby resulting in very high cut-off frequencies. It is only in recent decades that complementary metal-oxide-semiconductor (CMOS) field-effect transistor (FET) has been considered as the radio frequency (RF) technology of choice. In this review, the status of the digital, analog and RF figures of merit (FoM) of silicon-based FETs is presented. State-of-the-art devices with very good performance showing low values of drain-induced barrier lowering, sub-threshold swing, high values of gate transconductance, Early voltage, cut-off frequencies, and low minimum noise figure, and good low-frequency noise characteristic values are reported. The dependence of these FoM on the device gate length is also shown, helping the readers to understand the trends and challenges faced by shorter CMOS nodes. Device performance boosters including silicon-on-insulator substrates, multiple-gate architectures, strain engineering, ultra-thin body and buried-oxide and also III-V and 2D materials are discussed, highlighting the transistor characteristics that are influenced by these boosters. A brief comparison of the two main contenders in continuing Moore’s law, ultra-thin body buried-oxide and fin field-effect transistors are also presented. The authors would like to mention that despite extensive research carried out in the semiconductor industry, silicon-based MOSFET will continue to be the driving force in the foreseeable future.

Occupational exposure to electromagnetic fields from medical sources

PubMed Central

STAM, Rianne; YAMAGUCHI-SEKINO, Sachiko

2017-01-01

High exposures to electromagnetic fields (EMF) can occur near certain medical devices in the hospital environment. A systematic assessment of medical occupational EMF exposure could help to clarify where more attention to occupational safety may be needed. This paper seeks to identify sources of high exposure for hospital workers and compare the published exposure data to occupational limits in the European Union. A systematic search for peer-reviewed publications was conducted via PubMed and Scopus databases. Relevant grey literature was collected via a web search. For each publication, the highest measured magnetic flux density or internal electric field strength per device and main frequency component was extracted. For low frequency fields, high action levels may be exceeded for magnetic stimulation, MRI gradient fields and movement in MRI static fields. For radiofrequency fields, the action levels may be exceeded near devices for diathermy, electrosurgery and hyperthermia and in the radiofrequency field inside MRI scanners. The exposure limit values for internal electric field may be exceeded for MRI and magnetic stimulation. For MRI and magnetic stimulation, practical measures can limit worker exposure. For diathermy, electrosurgery and hyperthermia, additional calculations are necessary to determine if SAR limits may be exceeded in some scenarios. PMID:29109357

Semiconductor Materials for High Frequency Solid State Sources.

DTIC Science & Technology

1985-01-18

saturation on near and submicron-scale device performance. The motivation for this is as follows: Presently, individual semiconductors are accepted or...basis of all FET scaling procedures; and is a major motivating factor for going to submicron structures. This scaling was tested with the 4 following...performance. The motivation for this is as follows: Presently, individual semiconductors are accepted or rejected as candidate device materials based, in

Low-Frequency MEMS Electrostatic Vibration Energy Harvester With Corona-Charged Vertical Electrets and Nonlinear Stoppers

NASA Astrophysics Data System (ADS)

Lu, Y.; Cottone, F.; Boisseau, S.; Galayko, D.; Marty, F.; Basset, P.

2015-12-01

This paper reports for the first time a MEMS electrostatic vibration energy harvester (e-VEH) with corona-charged vertical electrets on its electrodes. The bandwidth of the 1-cm2 device is extended in low and high frequencies by nonlinear elastic stoppers. With a bias voltage of 46 V (electret@21 V + DC external source@25 V) between the electrodes, the RMS power of the device reaches 0.89 μW at 33 Hz and 6.6 μW at 428 Hz. The -3dB frequency band including the hysteresis is 223∼432 Hz, the one excluding the hysteresis 88∼166 Hz. We also demonstrate the charging of a 47 μF capacitor used for powering a wireless and autonomous temperature sensor node with a data transmission beyond 10 m at 868 MHz.

Highly directional thermal emitter

DOEpatents

Ribaudo, Troy; Shaner, Eric A; Davids, Paul; Peters, David W

2015-03-24

A highly directional thermal emitter device comprises a two-dimensional periodic array of heavily doped semiconductor structures on a surface of a substrate. The array provides a highly directional thermal emission at a peak wavelength between 3 and 15 microns when the array is heated. For example, highly doped silicon (HDSi) with a plasma frequency in the mid-wave infrared was used to fabricate nearly perfect absorbing two-dimensional gratings structures that function as highly directional thermal radiators. The absorption and emission characteristics of the HDSi devices possessed a high degree of angular dependence for infrared absorption in the 10-12 micron range, while maintaining high reflectivity of solar radiation (.about.64%) at large incidence angles.

High efficiency quantum cascade laser frequency comb.

PubMed

Lu, Quanyong; Wu, Donghai; Slivken, Steven; Razeghi, Manijeh

2017-03-06

An efficient mid-infrared frequency comb source is of great interest to high speed, high resolution spectroscopy and metrology. Here we demonstrate a mid-IR quantum cascade laser frequency comb with a high power output and narrow beatnote linewidth at room temperature. The active region was designed with a strong-coupling between the injector and the upper lasing level for high internal quantum efficiency and a broadband gain. The group velocity dispersion was engineered for efficient, broadband mode-locking via four wave mixing. The comb device exhibits a narrow intermode beatnote linewidth of 50.5 Hz and a maximum wall-plug efficiency of 6.5% covering a spectral coverage of 110 cm -1 at λ ~ 8 μm. The efficiency is improved by a factor of 6 compared with previous demonstrations. The high power efficiency and narrow beatnote linewidth will greatly expand the applications of quantum cascade laser frequency combs including high-precision remote sensing and spectroscopy.

High efficiency quantum cascade laser frequency comb

PubMed Central

Lu, Quanyong; Wu, Donghai; Slivken, Steven; Razeghi, Manijeh

2017-01-01

An efficient mid-infrared frequency comb source is of great interest to high speed, high resolution spectroscopy and metrology. Here we demonstrate a mid-IR quantum cascade laser frequency comb with a high power output and narrow beatnote linewidth at room temperature. The active region was designed with a strong-coupling between the injector and the upper lasing level for high internal quantum efficiency and a broadband gain. The group velocity dispersion was engineered for efficient, broadband mode-locking via four wave mixing. The comb device exhibits a narrow intermode beatnote linewidth of 50.5 Hz and a maximum wall-plug efficiency of 6.5% covering a spectral coverage of 110 cm−1 at λ ~ 8 μm. The efficiency is improved by a factor of 6 compared with previous demonstrations. The high power efficiency and narrow beatnote linewidth will greatly expand the applications of quantum cascade laser frequency combs including high-precision remote sensing and spectroscopy. PMID:28262834

High-frequency self-aligned graphene transistors with transferred gate stacks

PubMed Central

Cheng, Rui; Bai, Jingwei; Liao, Lei; Zhou, Hailong; Chen, Yu; Liu, Lixin; Lin, Yung-Chen; Jiang, Shan; Huang, Yu; Duan, Xiangfeng

2012-01-01

Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on a sacrificial substrate, and then transferred onto arbitrary substrates with graphene on top. A self-aligned process, enabled by the unique structure of the transferred gate stacks, is then used to position precisely the source and drain electrodes with minimized access resistance or parasitic capacitance. This process has therefore enabled scalable fabrication of self-aligned graphene transistors with unprecedented performance including a record-high cutoff frequency up to 427 GHz. Our study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra–high-frequency circuits. PMID:22753503

21 CFR 892.1540 - Nonfetal ultrasonic monitor.

Code of Federal Regulations, 2012 CFR

2012-04-01

...) Identification. A nonfetal ultrasonic monitor is a device that projects a continuous high-frequency sound wave... wave and is intended for use in the investigation of nonfetal blood flow and other nonfetal body...

21 CFR 892.1540 - Nonfetal ultrasonic monitor.

Code of Federal Regulations, 2013 CFR

2013-04-01

...) Identification. A nonfetal ultrasonic monitor is a device that projects a continuous high-frequency sound wave... wave and is intended for use in the investigation of nonfetal blood flow and other nonfetal body...

A Low Cost Traveling Wave Tube for Wireless Communications

NASA Technical Reports Server (NTRS)

Vancil, Bernard Kenneth; Wintucky, Edwin G.; Williams, W. D. (Technical Monitor)

2002-01-01

Demand for high data rate wireless communications is pushing up amplifier power, bandwidth and frequency requirements. Some systems are using vacuum electron devices again because solid-state power amplifiers are not able to efficiently meet the new requirements. The traveling wave tube is the VED of choice because of its excellent broadband capability as well as high power efficiency and frequency. But TWTs are very expensive on a per watt basis below about 200 watts of output power. We propose a new traveling wave tube that utilizes cathode ray tube construction technology and electrostatic focusing. We believe the tube can be built in quantity for under $1,000 each. We discuss several traveling wave tube slow wave circuits that lend themselves to the new construction. We will present modeling results and data on prototype devices.

Vibration Isolation and Stabilization System for Spacecraft Exercise Treadmill Devices

NASA Technical Reports Server (NTRS)

Fialho, Ian; Tyer, Craig; Murphy, Bryan; Cotter, Paul; Thampi, Sreekumar

2011-01-01

A novel, passive system has been developed for isolating an exercise treadmill device from a spacecraft in a zero-G environment. The Treadmill 2 Vibration Isolation and Stabilization System (T2-VIS) mechanically isolates the exercise treadmill from the spacecraft/space station, thereby eliminating the detrimental effect that high impact loads generated during walking/running would have on the spacecraft structure and sensitive microgravity science experiments. This design uses a second stage spring, in series with the first stage, to achieve an order of magnitude higher exercise- frequency isolation than conventional systems have done, while maintaining desirable low-frequency stability performance. This novel isolator design, in conjunction with appropriately configured treadmill platform inertia properties, has been shown (by on-orbit zero-G testing onboard the International Space Station) to deliver exceedingly high levels of isolation/ stability performance.

Dynamic generation of Ince-Gaussian modes with a digital micromirror device

NASA Astrophysics Data System (ADS)

Ren, Yu-Xuan; Fang, Zhao-Xiang; Gong, Lei; Huang, Kun; Chen, Yue; Lu, Rong-De

2015-04-01

Ince-Gaussian (IG) beam with elliptical profile, as a connection between Hermite-Gaussian (HG) and Laguerre-Gaussian (LG) beams, has showed unique advantages in some applications such as quantum entanglement and optical micromanipulation. However, its dynamic generation with high switching frequency is still challenging. Here, we experimentally reported the quick generation of Ince-Gaussian beam by using a digital micro-mirror device (DMD), which has the highest switching frequency of 5.2 kHz in principle. The configurable properties of DMD allow us to observe the quasi-smooth variation from LG (with ellipticity ɛ = 0 ) to IG and HG ( ɛ = ∞ ) beam. This approach might pave a path to high-speed quantum communication in terms of IG beam. Additionally, the characterized axial plane intensity distribution exhibits a 3D mould potentially being employed for optical micromanipulation.

Space-charge behavior of 'Thin-MOS' diodes with MBE-grown silicon films

NASA Technical Reports Server (NTRS)

Lieneweg, U.; Bean, J. C.

1984-01-01

Basic theoretical and experimental characteristics of a novel 'Thin-MOS' technology, which has promising aspects for integrated high-frequency devices up to several hundred gigahertz are presented. The operation of such devices depends on charge injection into undoped silicon layers of about 1000-A thickness, grown by molecular beam epitaxy on heavily doped substrates, and isolation by thermally grown oxides of about 100-A thickness. Capacitance-voltage characteristics measured at high and low frequencies agree well with theoretical ones derived from uni and ambipolar space-charge models. It is concluded that after oxidation the residual doping in the epilayer is less than approximately 10 to the 16th/cu cm and rises by 3 orders of magnitude at the substrate interface within less than 100 A and that interface states at the oxide interface can be kept low.

Arrays of Carbon Nanotubes as RF Filters in Waveguides

NASA Technical Reports Server (NTRS)

Hoppe, Daniel; Hunt, Brian; Hoenk, Michael; Noca, Flavio; Xu, Jimmy

2003-01-01

Brushlike arrays of carbon nanotubes embedded in microstrip waveguides provide highly efficient (high-Q) mechanical resonators that will enable ultraminiature radio-frequency (RF) integrated circuits. In its basic form, this invention is an RF filter based on a carbon nanotube array embedded in a microstrip (or coplanar) waveguide, as shown in Figure 1. In addition, arrays of these nanotube-based RF filters can be used as an RF filter bank. Applications of this new nanotube array device include a variety of communications and signal-processing technologies. High-Q resonators are essential for stable, low-noise communications, and radar applications. Mechanical oscillators can exhibit orders of magnitude higher Qs than electronic resonant circuits, which are limited by resistive losses. This has motivated the development of a variety of mechanical resonators, including bulk acoustic wave (BAW) resonators, surface acoustic wave (SAW) resonators, and Si and SiC micromachined resonators (known as microelectromechanical systems or MEMS). There is also a strong push to extend the resonant frequencies of these oscillators into the GHz regime of state-of-the-art electronics. Unfortunately, the BAW and SAW devices tend to be large and are not easily integrated into electronic circuits. MEMS structures have been integrated into circuits, but efforts to extend MEMS resonant frequencies into the GHz regime have been difficult because of scaling problems with the capacitively-coupled drive and readout. In contrast, the proposed devices would be much smaller and hence could be more readily incorporated into advanced RF (more specifically, microwave) integrated circuits.

Solid perception mechanism by a shading pattern: spatial frequency components in a corrugated wave pattern.

PubMed

Nameda, N

1988-01-01

Illumination allows solid object perception to be obtained and depicted by a shading pattern produced by lighting. The shading cue, as one of solid perception cues (Gibson 1979), was investigated in regard to a white corrugated wave shape, using computer graphic device: Tospix-2. The reason the corrugated wave was chosen, is that an alternately bright and dark pattern, produced by shading, can be conveniently analyzed into contained spatial frequencies. This paper reports spatial frequency properties contained in the shading pattern. The shading patterns, input into the computer graphic device, are analyzed by Fourier Transformation by the same device. After the filtration by various spatial frequency low and high pass filters, Inverse Fourier Transformation is carried out for the residual components. The result of the analysis indicates that the third through higher harmonics components are important in regard to presenting a solid reality feeling in solid perception. Sakata (1983) also reported that an edged pattern, superimposed onto a lower sinusoidal pattern, was important in solid perception. The third through higher harmonics components express the changing position of luminance on the pattern, and a slanted plane relating to the light direction. Detection of a solid shape, constructed with flat planes, is assumed to be on the bottom of the perfect curved solid perception mechanism. Apparent evidence for this assumption, in difficult visual conditions, is that a flat paneled solid is seen before the curved solid. This mechanism is explained by two spatial frequency neural network systems, assumed as having correspondence with higher spatial frequency detection and lower spatial frequency detection.

Dispersion compensated mid-infrared quantum cascade laser frequency comb with high power output

NASA Astrophysics Data System (ADS)

Lu, Q. Y.; Manna, S.; Slivken, S.; Wu, D. H.; Razeghi, M.

2017-04-01

Chromatic dispersion control plays an underlying role in optoelectronics and spectroscopy owing to its enhancement to nonlinear interactions by reducing the phase mismatching. This is particularly important to optical frequency combs based on quantum cascade lasers which require negligible dispersions for efficient mode locking of the dispersed modes into equally spaced comb modes. Here, we demonstrated a dispersion compensated mid-IR quantum cascade laser frequency comb with high power output at room temperature. A low-loss dispersive mirror has been engineered to compensate the device's dispersion residue for frequency comb generation. Narrow intermode beating linewidths of 40 Hz in the comb-working currents were identified with a high power output of 460 mW and a broad spectral coverage of 80 cm-1. This dispersion compensation technique will enable fast spectroscopy and high-resolution metrology based on QCL combs with controlled dispersion and suppressed noise.

Theoretical studies on a TeO2/ZnO/diamond-layered structure for zero TCD SAW devices

NASA Astrophysics Data System (ADS)

Dewan, Namrata; Sreenivas, K.; Gupta, Vinay

2008-08-01

High-frequency surface acoustic wave (SAW) devices based on diamond substrate are useful because of their very high SAW velocity. In the present work, SAW propagation characteristics, such as phase velocity, coupling coefficient and temperature coefficient of delay (TCD) of a TeO2/ZnO/diamond-layered structure, are examined using theoretical calculations. The ZnO/diamond bi-layer structure is found to exhibit a high positive TCD value. A zero TCD device structure is obtained after integration with a TeO2 over layer having a negative TCD value. Introduction of a non-piezoelectric TeO2 over layer on the bi-layer structure (ZnO/diamond) increases the coupling coefficient. A relatively low thickness of TeO2 thin film (~(1.6-3.1) × 10-3λ) is required to achieve temperature-stable SAW devices based on diamond.

Effects of BOX engineering on analogue/RF and circuit performance of InGaAs-OI-Si MOSFET

NASA Astrophysics Data System (ADS)

Maity, Subir Kr.; Pandit, Soumya

2017-11-01

InGaAs is an attractive choice as alternate channel material in n-channel metal oxide semiconductor transistor for high-performance applications. However, electrostatic integrity of such device is poor. In this paper, we present a comprehensive technology computer-aided design simulation-based study of the effect of scaling the thickness of the buried oxide (BOX) region and varying the dielectric constant of BOX material on the electrostatic integrity, analogue/radio frequency (RF) performance and circuit performance of InGaAs-on-Insulator device. Device with thin BOX layer gives better drain-induced barrier lowering performance which enhances output resistance. The carrier mobility remains almost constant with thinning of BOX layer up to certain value. By lowering the dielectric constant of the BOX material, it is further possible to improve the analogue and RF performance. Effect of BOX thickness scaling and role of BOX dielectric material on gain-frequency response of common source amplifier is also studied. It is observed that frequency response of the amplifier improves for thin BOX and with low dielectric constant-based material.

Efficacy of the device combining high-frequency transcutaneous electrical nerve stimulation and thermotherapy for relieving primary dysmenorrhea: a randomized, single-blind, placebo-controlled trial.

PubMed

Lee, Banghyun; Hong, Seung Hwa; Kim, Kidong; Kang, Wee Chang; No, Jae Hong; Lee, Jung Ryeol; Jee, Byung Chul; Yang, Eun Joo; Cha, Eun-Jong; Kim, Yong Beom

2015-11-01

To investigate the efficacy and safety of the combined therapy with high-frequency transcutaneous electrical nerve stimulation (hf-TENS) and thermotherapy in relieving primary dysmenorrheal pain. In this randomized, single-blind, placebo-controlled study, 115 women with moderate or severe primary dysmenorrhea were assigned to the study or control group at a ratio of 1:1. Subjects in the study group used an integrated hf-TENS/thermotherapy device, whereas control subjects used a sham device. A visual analog scale was used to measure pain intensity. Variables related to pain relief, including reduction rate of dysmenorrheal score, were compared between the groups. The dysmenorrheal score was significantly reduced in the study group compared to the control group following the use of the devices. The duration of pain relief was significantly increased in the study group compared to the control group. There were no differences between the groups in the brief pain inventory scores, numbers of ibuprofen tablets taken orally, and World Health Organization quality of life-BREF scores. No adverse events were observed related to the use of the study device. The combination of hf-TENS and thermotherapy was effective in relieving acute pain in women with moderate or severe primary dysmenorrhea. Copyright © 2015 Elsevier Ireland Ltd. All rights reserved.

Radio Frequency Magnetron Sputtering Deposition of TiO2 Thin Films and Their Perovskite Solar Cell Applications

PubMed Central

Chen, Cong; Cheng, Yu; Dai, Qilin; Song, Hongwei

2015-01-01

In this work, we report a physical deposition based, compact (cp) layer synthesis for planar heterojunction perovskite solar cells. Typical solution-based synthesis of cp layer for perovskite solar cells involves low-quality of thin films, high-temperature annealing, non-flexible devices, limitation of large-scale production and that the effects of the cp layer on carrier transport have not been fully understood. In this research, using radio frequency magnetron sputtering (RFMS), TiO2 cp layers were fabricated and the thickness could be controlled by deposition time; CH3NH3PbI3 films were prepared by evaporation & immersion (E & I) method, in which PbI2 films made by thermal evaporation technique were immersed in CH3NH3I solution. The devices exhibit power conversion efficiency (PCE) of 12.1% and the photovoltaic performance can maintain 77% of its initial PCE after 1440 h. The method developed in this study has the capability of fabricating large active area devices (40 × 40 mm2) showing a promising PCE of 4.8%. Low temperature and flexible devices were realized and a PCE of 8.9% was obtained on the PET/ITO substrates. These approaches could be used in thin film based solar cells which require high-quality films leading to reduced fabrication cost and improved device performance. PMID:26631493

Frequency-dependent polarization-angle-phase-shift in the microwave-induced magnetoresistance oscillations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Han-Chun; Ye, Tianyu; Mani, R. G.

2015-02-14

Linear polarization angle, θ, dependent measurements of the microwave radiation-induced oscillatory magnetoresistance, R{sub xx}, in high mobility GaAs/AlGaAs 2D electron devices have shown a θ dependence in the oscillatory amplitude along with magnetic field, frequency, and extrema-dependent phase shifts, θ{sub 0}. Here, we suggest a microwave frequency dependence of θ{sub 0}(f) using an analysis that averages over other smaller contributions, when those contributions are smaller than estimates of the experimental uncertainty.

Tunable Dielectric Materials and Devices for Broadband Wireless Communications

NASA Technical Reports Server (NTRS)

Mueller, Carl H.; Miranda, Felix A.; Dayton, James A. (Technical Monitor)

1998-01-01

Wireless and satellite communications are a rapidly growing industries which are slated for explosive growth into emerging countries as well as countries with advanced economies. The dominant trend in wireless communication systems is towards broadband applications such as multimedia file transfer, video transmission and Internet access. These applications require much higher data transmission rates than those currently used for voice transmission applications. To achieve these higher data rates, substantially larger bandwidths and higher carrier frequencies are required. A key roadblock to implementing these systems at K-band (18-26.5 GHz) and Ka-band (26.5-40 GHz) is the need to develop hardware which meets the requirements for high data rate transmission in a cost effective manner. In this chapter, we report on the status of tunable dielectric thin films for devices, such as resonators, filters, phased array antennas, and tunable oscillators, which utilize nonlinear tuning in the control elements. Paraelectric materials such as Barium Strontium Titanate ((Ba, Sr)TiO3) have dielectric constants which can be tuned by varying the magnitude of the electric field across the material. Therefore, these materials can be used to control the frequency and/or phase response of various devices such as electronically steerable phased array antennas, oscillators, and filters. Currently, tunable dielectric devices are being developed for applications which require high tunability, low loss, and good RF power-handling capabilities at microwave and millimeter-wave frequencies. These properties are strongly impacted by film microstructure and device design, and considerable developmental work is still required. However, in the last several years enormous progress has occurred in this field, validating the potential of tunable dielectric technology for broadband wireless communication applications. In this chapter we summarize how film processing techniques, microwave test configurations, and prototype devices have combined to drive the field to its current stage of development.

Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators.

PubMed

Ye, Fan; Lee, Jaesung; Feng, Philip X-L

2017-11-30

Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be hetero-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS 2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize an array of MoS 2 -graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ∼100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS 2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS 2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and provides opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.

Acoustic biosensors.

PubMed

Fogel, Ronen; Limson, Janice; Seshia, Ashwin A

2016-06-30

Resonant and acoustic wave devices have been researched for several decades for application in the gravimetric sensing of a variety of biological and chemical analytes. These devices operate by coupling the measurand (e.g. analyte adsorption) as a modulation in the physical properties of the acoustic wave (e.g. resonant frequency, acoustic velocity, dissipation) that can then be correlated with the amount of adsorbed analyte. These devices can also be miniaturized with advantages in terms of cost, size and scalability, as well as potential additional features including integration with microfluidics and electronics, scaled sensitivities associated with smaller dimensions and higher operational frequencies, the ability to multiplex detection across arrays of hundreds of devices embedded in a single chip, increased throughput and the ability to interrogate a wider range of modes including within the same device. Additionally, device fabrication is often compatible with semiconductor volume batch manufacturing techniques enabling cost scalability and a high degree of precision and reproducibility in the manufacturing process. Integration with microfluidics handling also enables suitable sample pre-processing/separation/purification/amplification steps that could improve selectivity and the overall signal-to-noise ratio. Three device types are reviewed here: (i) bulk acoustic wave sensors, (ii) surface acoustic wave sensors, and (iii) micro/nano-electromechanical system (MEMS/NEMS) sensors. © 2016 The Author(s). Published by Portland Press Limited on behalf of the Biochemical Society.

High Accuracy Investigation of Microwave Absorption in Polymer Electrical Components on Motherboard of Computers

NASA Astrophysics Data System (ADS)

Dašić, P.; Hutanu, C.; Jevremović, V.; Dobra, R.; Risteiu, M.; Ileana, I.

2017-06-01

Electronic operating at high frequencies can have problems with emission of high frequency noise. Once put inside an enclosure, the energy will add in phase at certain frequencies to cause resonances which will hinder the performance of the device. These absorbers are based upon open celled foam impregnated with a carbon coating. It is quite possible that in the near future, microprocessors would be to work on a frequency located in 5 to 10 GHz. In these circumstances it is useful to know how and how much of the electromagnetic field emitted by a microprocessor, it is absorbed by the circuit elements in the immediate vicinity of the microprocessor. The aim of this contribution is to demonstrate throughout high-level experimental analysis how the main electric parameters of polymer materials, which build the printed circuits and the one of electric capacitors and resistors, depend on the frequencies on which they work from the microwave range.

Design and Optimization of Ultrasonic Vibration Mechanism using PZT for Precision Laser Machining

NASA Astrophysics Data System (ADS)

Kim, Woo-Jin; Lu, Fei; Cho, Sung-Hak; Park, Jong-Kweon; Lee, Moon G.

As the aged population grows around the world, many medical instruments and devices have been developed recently. Among the devices, a drug delivery stent is a medical device which requires precision machining. Conventional drug delivery stent has problems of residual polymer and decoating because the drug is coated on the surface of stent with the polymer. If the drug is impregnated in the micro sized holes on the surface, the problems can be overcome because there is no need to use the polymer anymore. Micro sized holes are generally fabricated by laser machining; however, the fabricated holes do not have a high aspect ratio or a good surface finish. To overcome these problems, we propose a vibration-assisted machining mechanism with PZT (Piezoelectric Transducers) for the fabrication of micro sized holes. If the mechanism vibrates the eyepiece of the laser machining head, the laser spot on the workpiece will vibrate vertically because objective lens in the eyepiece shakes by the mechanism's vibration. According to the former researches, the vibrating frequency over 20 kHz and amplitude over 500 nm are preferable. The vibration mechanism has cylindrical guide, hollowed PZT and supports. In the cylinder, the eyepiece is mounted. The cylindrical guide has upper and low plates and side wall. The shape of plates and side wall are designed to have high resonating frequency and large amplitude of motion. The PZT is also selected to have high actuating force and high speed of motion. The support has symmetrical and rigid configuration. The mechanism secures linear motion of the eyepiece. This research includes sensitivity analysis and design of ultrasonic vibration mechanism. As a result of design, the requirements of high frequency and large amplitude are achieved.

Description of a Portable Wireless Device for High-Frequency Body Temperature Acquisition and Analysis

PubMed Central

Cuesta-Frau, David; Varela, Manuel; Aboy, Mateo; Miró-Martínez, Pau

2009-01-01

We describe a device for dual channel body temperature monitoring. The device can operate as a real time monitor or as a data logger, and has Bluetooth capabilities to enable for wireless data download to the computer used for data analysis. The proposed device is capable of sampling temperature at a rate of 1 sample per minute with a resolution of 0.01 °C . The internal memory allows for stand-alone data logging of up to 10 days. The device has a battery life of 50 hours in continuous real-time mode. In addition to describing the proposed device in detail, we report the results of a statistical analysis conducted to assess its accuracy and reproducibility. PMID:22408473

Description of a portable wireless device for high-frequency body temperature acquisition and analysis.

PubMed

Cuesta-Frau, David; Varela, Manuel; Aboy, Mateo; Miró-Martínez, Pau

2009-01-01

We describe a device for dual channel body temperature monitoring. The device can operate as a real time monitor or as a data logger, and has Bluetooth capabilities to enable for wireless data download to the computer used for data analysis. The proposed device is capable of sampling temperature at a rate of 1 sample per minute with a resolution of 0.01 °C . The internal memory allows for stand-alone data logging of up to 10 days. The device has a battery life of 50 hours in continuous real-time mode. In addition to describing the proposed device in detail, we report the results of a statistical analysis conducted to assess its accuracy and reproducibility.

Combinational light emitting diode-high frequency focused ultrasound treatment for HeLa cell.

PubMed

Choe, Se-Woon; Park, Kitae; Park, Chulwoo; Ryu, Jaemyung; Choi, Hojong

2017-12-01

Light sources such as laser and light emitting diode or ultrasound devices have been widely used for cancer therapy and regenerative medicines, since they are more cost-effective and less harmful than radiation therapy, chemotherapy or magnetic treatment. Compared to laser and low intensity ultrasound techniques, light emitting diode and high frequency focused ultrasound shows enhanced therapeutic effects, especially for small tumors. We propose combinational light emitting diode-high frequency focused ultrasound treatment for human cervical cancer HeLa cells. Individual red, green, and blue light emitting diode light only, high frequency focused ultrasound only, or light emitting diode light combined with high frequency focused ultrasound treatments were applied in order to characterize the responses of HeLa cells. Cell density exposed by blue light emitting diode light combined with high frequency focused ultrasound (2.19 ± 0.58%) was much lower than that of cells exposed by red and green light emitting diode lights (81.71 ± 9.92% and 61.81 ± 4.09%), blue light emitting diode light (11.19 ± 2.51%) or high frequency focused ultrasound only (9.72 ± 1.04%). We believe that the proposed combinational blue light emitting diode-high frequency focused ultrasound treatment could have therapeutic benefits to alleviate cancer cell proliferation.

Crossed SMPS MOSFET-based protection circuit for high frequency ultrasound transceivers and transducers

PubMed Central

2014-01-01

Background The ultrasonic transducer is one of the core components of ultrasound systems, and the transducer’s sensitivity is significantly related the loss of electronic components such as the transmitter, receiver, and protection circuit. In an ultrasonic device, protection circuits are commonly used to isolate the electrical noise between an ultrasound transmitter and transducer and to minimize unwanted discharged pulses in order to protect the ultrasound receiver. However, the performance of the protection circuit and transceiver obviously degrade as the operating frequency or voltage increases. We therefore developed a crossed SMPS (Switching Mode Power Supply) MOSFET-based protection circuit in order to maximize the sensitivity of high frequency transducers in ultrasound systems. The high frequency pulse signals need to trigger the transducer, and high frequency pulse signals must be received by the transducer. We therefore selected the SMPS MOSFET, which is the main component of the protection circuit, to minimize the loss in high frequency operation. The crossed configuration of the protection circuit can drive balanced bipolar high voltage signals from the pulser and transfer the balanced low voltage echo signals from the transducer. Methods The equivalent circuit models of the SMPS MOSFET-based protection circuit are shown in order to select the proper device components. The schematic diagram and operation mechanism of the protection circuit is provided to show how the protection circuit is constructed. The P-Spice circuit simulation was also performed in order to estimate the performance of the crossed MOSFET-based protection circuit. Results We compared the performance of our crossed SMPS MOSFET-based protection circuit with a commercial diode-based protection circuit. At 60 MHz, our expander and limiter circuits have lower insertion loss than the commercial diode-based circuits. The pulse-echo test is typical method to evaluate the sensitivity of ultrasonic transducers. Therefore, we performed a pulse-echo test using a single element transducer in order to utilize the crossed SMPS MOSFET-based protection circuit in an ultrasound system. Conclusions The SMPS-based protection circuit could be a viable alternative that provides better sensitivity, especially for high frequency ultrasound applications. PMID:24924595

Crossed SMPS MOSFET-based protection circuit for high frequency ultrasound transceivers and transducers.

PubMed

Choi, Hojong; Shung, K Kirk

2014-06-12

The ultrasonic transducer is one of the core components of ultrasound systems, and the transducer's sensitivity is significantly related the loss of electronic components such as the transmitter, receiver, and protection circuit. In an ultrasonic device, protection circuits are commonly used to isolate the electrical noise between an ultrasound transmitter and transducer and to minimize unwanted discharged pulses in order to protect the ultrasound receiver. However, the performance of the protection circuit and transceiver obviously degrade as the operating frequency or voltage increases. We therefore developed a crossed SMPS (Switching Mode Power Supply) MOSFET-based protection circuit in order to maximize the sensitivity of high frequency transducers in ultrasound systems.The high frequency pulse signals need to trigger the transducer, and high frequency pulse signals must be received by the transducer. We therefore selected the SMPS MOSFET, which is the main component of the protection circuit, to minimize the loss in high frequency operation. The crossed configuration of the protection circuit can drive balanced bipolar high voltage signals from the pulser and transfer the balanced low voltage echo signals from the transducer. The equivalent circuit models of the SMPS MOSFET-based protection circuit are shown in order to select the proper device components. The schematic diagram and operation mechanism of the protection circuit is provided to show how the protection circuit is constructed. The P-Spice circuit simulation was also performed in order to estimate the performance of the crossed MOSFET-based protection circuit. We compared the performance of our crossed SMPS MOSFET-based protection circuit with a commercial diode-based protection circuit. At 60 MHz, our expander and limiter circuits have lower insertion loss than the commercial diode-based circuits. The pulse-echo test is typical method to evaluate the sensitivity of ultrasonic transducers. Therefore, we performed a pulse-echo test using a single element transducer in order to utilize the crossed SMPS MOSFET-based protection circuit in an ultrasound system. The SMPS-based protection circuit could be a viable alternative that provides better sensitivity, especially for high frequency ultrasound applications.

High-order modes of spoof surface plasmonic wave transmission on thin metal film structure.

PubMed

Liu, Xiaoyong; Feng, Yijun; Zhu, Bo; Zhao, Junming; Jiang, Tian

2013-12-16

Recently, conformal surface plasmon (CSP) structure has been successfully proposed that could support spoof surface plasmon polaritons (SPPs) on corrugated metallic strip with ultrathin thickness [Proc. Natl. Acad. Sci. U.S.A. 110, 40-45 (2013)]. Such concept provides a flexible, conformal, and ultrathin wave-guiding element, very promising for application of plasmonic devices, and circuits in the frequency ranging from microwave to mid-infrared. In this work, we investigated the dispersions and field patterns of high-order modes of spoof SPPs along CSP structure of thin metal film with corrugated edge of periodic array of grooves, and carried out direct measurement on the transmission spectrum of multi-band of surface wave propagation at microwave frequency. It is found that the mode number and mode bands are mainly determined by the depth of the grooves, providing a way to control the multi-band transmission spectrum. We have also experimentally verified the high-order mode spoof SPPs propagation on curved CSP structure with acceptable bending loss. The multi-band propagation of spoof surface wave is believed to be applicable for further design of novel planar devices such as filters, resonators, and couplers, and the concept can be extended to terahertz frequency range.

Time-Domain Finite Element Analysis of Nonlinear Breakdown Problems in High-Power-Microwave Devices and Systems

DTIC Science & Technology

2015-12-24

simulation of the electromagnetic- plasma interaction and the high-power microwave breakdown in air. Under the high pressure and high frequency condition of...the high-power air breakdown, the physical phenomenon is described using a nonlinearly coupled full-wave Maxwell and fluid plasma system. This...Challenges ........................................................................... 3 3.1.1 Plasma Fluid Model

Hydrogel ionotronics

NASA Astrophysics Data System (ADS)

Yang, Canhui; Suo, Zhigang

2018-06-01

An ionotronic device functions by a hybrid circuit of mobile ions and mobile electrons. Hydrogels are stretchable, transparent, ionic conductors that can transmit electrical signals of high frequency over long distance, enabling ionotronic devices such as artificial muscles, skins and axons. Moreover, ionotronic luminescent devices, ionotronic liquid crystal devices, touchpads, triboelectric generators, artificial eels and gel-elastomer-oil devices can be designed based on hydrogels. In this Review, we discuss first-generation hydrogel ionotronic devices and the challenges associated with the mechanical properties and the chemistry of the materials. We examine how strong and stretchable adhesion between hydrophilic and hydrophobic polymer networks can be achieved, how water can be retained in hydrogels and how to design hydrogels that resist fatigue under cyclic loads. Finally, we highlight applications of hydrogel ionotronic devices and discuss the future of the field.

A high-frequency transimpedance amplifier for CMOS integrated 2D CMUT array towards 3D ultrasound imaging.

PubMed

Huang, Xiwei; Cheong, Jia Hao; Cha, Hyouk-Kyu; Yu, Hongbin; Je, Minkyu; Yu, Hao

2013-01-01

One transimpedance amplifier based CMOS analog front-end (AFE) receiver is integrated with capacitive micromachined ultrasound transducers (CMUTs) towards high frequency 3D ultrasound imaging. Considering device specifications from CMUTs, the TIA is designed to amplify received signals from 17.5MHz to 52.5MHz with center frequency at 35MHz; and is fabricated in Global Foundry 0.18-µm 30-V high-voltage (HV) Bipolar/CMOS/DMOS (BCD) process. The measurement results show that the TIA with power-supply 6V can reach transimpedance gain of 61dBΩ and operating frequency from 17.5MHz to 100MHz. The measured input referred noise is 27.5pA/√Hz. Acoustic pulse-echo testing is conducted to demonstrate the receiving functionality of the designed 3D ultrasound imaging system.

Micro-power dissipation device described

NASA Astrophysics Data System (ADS)

Mao, X.; Zhou, L.; Zhou, J.

1985-11-01

The common-emitter current gain beta of a common two-pole transistor is generally below 250. They are referred to as high-beta or high gain transistors when the beta of such transistors exceeds 300. When the beta of a transistor is higher than 1,000, it is called a super-beta transistor (SBT) or supergain transistor. The micropower dissipation type has the widest applications among the high-beta. Micropower dissipation high-beta means that there is a high gain or a superhigh gain under a microcurrent. The device is widely used in small signal-detection systems and stereo audio equipment because of their characteristics of high gain, low frequency and low noise under small signals.

Surface Acoustic Wave (SAW) for Chemical Sensing Applications of Recognition Layers †

PubMed Central

2017-01-01

Surface acoustic wave (SAW) resonators represent some of the most prominent acoustic devices for chemical sensing applications. As their frequency ranges from several hundred MHz to GHz, therefore they can record remarkably diminutive frequency shifts resulting from exceptionally small mass loadings. Their miniaturized design, high thermal stability and possibility of wireless integration make these devices highly competitive. Owing to these special characteristics, they are widely accepted as smart transducers that can be combined with a variety of recognition layers based on host-guest interactions, metal oxide coatings, carbon nanotubes, graphene sheets, functional polymers and biological receptors. As a result of this, there is a broad spectrum of SAW sensors, i.e., having sensing applications ranging from small gas molecules to large bio-analytes or even whole cell structures. This review shall cover from the fundamentals to modern design developments in SAW devices with respect to interfacial receptor coatings for exemplary sensor applications. The related problems and their possible solutions shall also be covered, with a focus on emerging trends and future opportunities for making SAW as established sensing technology. PMID:29186771

Self-transducing silicon nanowire electromechanical systems at room temperature.

PubMed

He, Rongrui; Feng, X L; Roukes, M L; Yang, Peidong

2008-06-01

Electronic readout of the motions of genuinely nanoscale mechanical devices at room temperature imposes an important challenge for the integration and application of nanoelectromechanical systems (NEMS). Here, we report the first experiments on piezoresistively transduced very high frequency Si nanowire (SiNW) resonators with on-chip electronic actuation at room temperature. We have demonstrated that, for very thin (~90 nm down to ~30 nm) SiNWs, their time-varying strain can be exploited for self-transducing the devices' resonant motions at frequencies as high as approximately 100 MHz. The strain of wire elongation, which is only second-order in doubly clamped structures, enables efficient displacement transducer because of the enhanced piezoresistance effect in these SiNWs. This intrinsically integrated transducer is uniquely suited for a class of very thin wires and beams where metallization and multilayer complex patterning on devices become impractical. The 30 nm thin SiNW NEMS offer exceptional mass sensitivities in the subzeptogram range. This demonstration makes it promising to advance toward NEMS sensors based on ultrathin and even molecular-scale SiNWs, and their monolithic integration with microelectronics on the same chip.

Surface Acoustic Wave (SAW) for Chemical Sensing Applications of Recognition Layers.

PubMed

Mujahid, Adnan; Dickert, Franz L

2017-11-24

Surface acoustic wave (SAW) resonators represent some of the most prominent acoustic devices for chemical sensing applications. As their frequency ranges from several hundred MHz to GHz, therefore they can record remarkably diminutive frequency shifts resulting from exceptionally small mass loadings. Their miniaturized design, high thermal stability and possibility of wireless integration make these devices highly competitive. Owing to these special characteristics, they are widely accepted as smart transducers that can be combined with a variety of recognition layers based on host-guest interactions, metal oxide coatings, carbon nanotubes, graphene sheets, functional polymers and biological receptors. As a result of this, there is a broad spectrum of SAW sensors, i.e., having sensing applications ranging from small gas molecules to large bio-analytes or even whole cell structures. This review shall cover from the fundamentals to modern design developments in SAW devices with respect to interfacial receptor coatings for exemplary sensor applications. The related problems and their possible solutions shall also be covered, with a focus on emerging trends and future opportunities for making SAW as established sensing technology.

Use of a new novel humidification system with high frequency percussive ventilation in a patient with inhalation injury.

PubMed

Jones, Samuel W; Short, Kathy A; Joseph, Mark; Sommer, Courtney; Cairns, Bruce A

2010-01-01

Historically, it has been difficult to provide adequate humidification delivery with the high frequency percussive ventilator (HFPV) used in many burn centers. It is possible burn centers have avoided using HFPV because of the risk of mucus plugging, dried secretions, and cast formation. Experiences with HFPV provided doubt that the HFPV ventilator circuit could supply adequate humidification to patients receiving this mode of ventilation. Independent gas-flow delivery through the ventilator circuit inherent in HFPV provided a challenge in maintaining adequate humidification delivery to the patient. This report describes a dramatic reduction in dried, inspissated secretions by using a novel new humidification device with HFPV. The new device called the Hydrate Omni (Hydrate, Inc., Midlothian, VA) uses a small ceramic disk to provide fine water particles delivered by a pump to the HFPV circuit. This new device may alleviate previous concerns related to the delivery of adequate humidification with the HFPV. This case report was approved by the University of North Carolina School of Medicine Institutional Review Board.

Energy harvesting from low frequency applications using piezoelectric materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Huidong; Tian, Chuan; Deng, Z. Daniel, E-mail: zhiqun.deng@pnnl.gov

2014-12-15

In an effort to eliminate the replacement of the batteries of electronic devices that are difficult or impractical to service once deployed, harvesting energy from mechanical vibrations or impacts using piezoelectric materials has been researched over the last several decades. However, a majority of these applications have very low input frequencies. This presents a challenge for the researchers to optimize the energy output of piezoelectric energy harvesters, due to the relatively high elastic moduli of piezoelectric materials used to date. This paper reviews the current state of research on piezoelectric energy harvesting devices for low frequency (0–100 Hz) applications and themore » methods that have been developed to improve the power outputs of the piezoelectric energy harvesters. Various key aspects that contribute to the overall performance of a piezoelectric energy harvester are discussed, including geometries of the piezoelectric element, types of piezoelectric material used, techniques employed to match the resonance frequency of the piezoelectric element to input frequency of the host structure, and electronic circuits specifically designed for energy harvesters.« less

Dielectric Performance of a High Purity HTCC Alumina at High Temperatures - a Comparison Study with Other Polycrystalline Alumina

NASA Technical Reports Server (NTRS)

Chen, Liangyu

2014-01-01

A very high purity (99.99+%) high temperature co-fired ceramic (HTCC) alumina has recently become commercially available. The raw material of this HTCC alumina is very different from conventional HTCC alumina, and more importantly there is no glass additive in this alumina material for co-firing processing. Previously, selected HTCC and LTCC (low temperature co-fired ceramic) alumina materials were evaluated at high temperatures as dielectric and compared to a regularly sintered 96% polycrystalline alumina (96% Al2O3), where 96% alumina was used as the benchmark. A prototype packaging system based on regular 96% alumina with Au thickfilm metallization successfully facilitated long term testing of high temperature silicon carbide (SiC) electronic devices for over 10,000 hours at 500 C. In order to evaluate this new high purity HTCC alumina for possible high temperature packaging applications, the dielectric properties of this HTCC alumina substrate were measured and compared with those of 96% alumina and a previously tested LTCC alumina from room temperature to 550 C at frequencies of 120 Hz, 1 KHz, 10 KHz, 100 KHz, and 1 MHz. A parallel-plate capacitive device with dielectric of the HTCC alumina and precious metal electrodes were used for measurements of the dielectric constant and dielectric loss of the co-fired alumina material in the temperature and frequency ranges. The capacitance and AC parallel conductance of the capacitive device were directly measured by an AC impedance meter, and the dielectric constant and parallel AC conductivity of the dielectric were calculated from the capacitance and conductance measurement results. The temperature and frequency dependent dielectric constant, AC conductivity, and dissipation factor of the HTCC alumina substrate are presented and compared to those of 96% alumina and a selected LTCC alumina. Other technical advantages of this new co-fired material for possible high packaging applications are also discussed.

Non-synchronous control of self-oscillating resonant converters

DOEpatents

Glaser, John Stanley; Zane, Regan Andrew

2002-01-01

A self-oscillating switching power converter has a controllable reactance including an active device connected to a reactive element, wherein the effective reactance of the reactance and the active device is controlled such that the control waveform for the active device is binary digital and is not synchronized with the switching converter output frequency. The active device is turned completely on and off at a frequency that is substantially greater than the maximum frequency imposed on the output terminals of the active device. The effect is to vary the average resistance across the active device output terminals, and thus the effective output reactance, thereby providing converter output control, while maintaining the response speed of the converter.

FInvestigation of enhancement mode HfO2 insulated N-polarity GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT for high-frequency applications

NASA Astrophysics Data System (ADS)

Mohanbabu, A.; Mohankumar, N.; Godwin Raj, D.; Sarkar, Partha

2017-08-01

In this paper, we examined normally-OFF N-polar InN-channel Metal insulated semiconductor high-electron mobility transistors (MISHEMTs) device with a relaxed In0.9Al0.1N buffer layer. In addition, the enhancement-mode operation of the N-polar structure was investigated. The effect of scaling in N-polar MISHEMT, such as the dielectric and the channel thickness, alter the electrical behavior of the device. We have achieved a maximum drain current of 1.17 A/mm, threshold voltage (VT) =0.728 V, transconductance (gm) of 2.9 S mm-1, high ION/IOFF current ratio of 3.23×103, lowest ON-state resistance (RON) of 0.41 Ω mm and an intrinsic delay time (τ) of 1.456 Fs along with high-frequency performance with ft/ fmaxof 90 GHz/109 GHz and 180 GHz/260 GHz for TCH =0.5 nm at Vds =0.5 V and 1.0 V. The numerically simulated results of highly confined GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT exhibits outstanding potential as one of the possibility to replace presently used N-polar MISHEMTs for delivering high power density and frequency at RF/power amplifier applications.

Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

NASA Astrophysics Data System (ADS)

Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

2015-03-01

Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

The artificial retina processor for track reconstruction at the LHC crossing rate

DOE PAGES

Abba, A.; Bedeschi, F.; Citterio, M.; ...

2015-03-16

We present results of an R&D study for a specialized processor capable of precisely reconstructing, in pixel detectors, hundreds of charged-particle tracks from high-energy collisions at 40 MHz rate. We apply a highly parallel pattern-recognition algorithm, inspired by studies of the processing of visual images by the brain as it happens in nature, and describe in detail an efficient hardware implementation in high-speed, high-bandwidth FPGA devices. This is the first detailed demonstration of reconstruction of offline-quality tracks at 40 MHz and makes the device suitable for processing Large Hadron Collider events at the full crossing frequency.

21 CFR 884.4160 - Unipolar endoscopic coagulator-cutter and accessories.

Code of Federal Regulations, 2010 CFR

2010-04-01

... temperatures by directing a high frequency electrical current through the tissue between an energized probe and... generator, probes and electrical cables, and a patient grounding plate. This generic type of device does not...

21 CFR 884.4160 - Unipolar endoscopic coagulator-cutter and accessories.

Code of Federal Regulations, 2011 CFR

2011-04-01

... temperatures by directing a high frequency electrical current through the tissue between an energized probe and... generator, probes and electrical cables, and a patient grounding plate. This generic type of device does not...

21 CFR 884.4160 - Unipolar endoscopic coagulator-cutter and accessories.

Code of Federal Regulations, 2012 CFR

2012-04-01

... temperatures by directing a high frequency electrical current through the tissue between an energized probe and... generator, probes and electrical cables, and a patient grounding plate. This generic type of device does not...

21 CFR 884.4160 - Unipolar endoscopic coagulator-cutter and accessories.

Code of Federal Regulations, 2014 CFR

2014-04-01

... temperatures by directing a high frequency electrical current through the tissue between an energized probe and... generator, probes and electrical cables, and a patient grounding plate. This generic type of device does not...

21 CFR 884.4160 - Unipolar endoscopic coagulator-cutter and accessories.

Code of Federal Regulations, 2013 CFR

2013-04-01

... temperatures by directing a high frequency electrical current through the tissue between an energized probe and... generator, probes and electrical cables, and a patient grounding plate. This generic type of device does not...

Negative Differential Resistance (NDR) frequency conversion with gain

NASA Technical Reports Server (NTRS)

Hwu, R. J.; Alm, R. W.; Lee, S. C.

1992-01-01

The dependence of the I-V characteristic of the negative differential resistance (NDR) devices on the power level and frequency of the rf input signal has been theoretically analyzed with a modified large- and small-signal nonlinear circuit analysis program. The NDR devices we used in this work include both the tunnel diode (without the antisymmetry in the I-V characteristic) and resonant-tunneling devices (with the antisymmetry in the I-V characteristic). Absolute negative conductance can be found from a zero-biased resonant tunneling device when the applied pump power is within a small range. This study verifies the work of Sollner et al. Variable negative conductances at the fundamental and harmonic frequencies can also be obtained from both the unbiased and biased tunnel diodes. The magnitude of the negative conductances can be adjusted by varying the pump amplitude -- a very useful circuit property. However, the voltage range over which the negative conductance occurs moves towards the more positive side of the voltage axis with increasing frequency. Furthermore, the range of the pumping amplitude to obtain negative conductance varies with the parasitics (resistance and capacitance) of the device. The theoretical observation of the dependence of the I-V characteristic of the NDR devices on the power and frequency of the applied pump signal is supported by the experimental results. In addition, novel functions of a NDR device such as self-oscillating frequency multiplier and mixer with gain have been experimentally demonstrated. The unbiased oscillator have also been successfully realized with a NDR device with an antisymmetrical I-V characteristic. Finally, the applications of these device functions will be discussed.

Single crystal metal wedges for surface acoustic wave propagation

DOEpatents

Fisher, E.S.

1980-05-09

An ultrasonic testing device has been developed to evaluate flaws and inhomogeneities in the near-surface region of a test material. A metal single crystal wedge is used to generate high frequency Rayleigh surface waves in the test material surface by conversion of a slow velocity, bulk acoustic mode in the wedge into a Rayleigh wave at the metal-wedge test material interface. Particular classes of metals have been found to provide the bulk acoustic modes necessary for production of a surface wave with extremely high frequency and angular collimation. The high frequency allows flaws and inhomogeneities to be examined with greater resolution. The high degree of angular collimation for the outgoing ultrasonic beam permits precision angular location of flaws and inhomogeneities in the test material surface.

Single crystal metal wedges for surface acoustic wave propagation

DOEpatents

Fisher, Edward S.

1982-01-01

An ultrasonic testing device has been developed to evaluate flaws and inhomogeneities in the near-surface region of a test material. A metal single crystal wedge is used to generate high frequency Rayleigh surface waves in the test material surface by conversion of a slow velocity, bulk acoustic mode in the wedge into a Rayleigh wave at the metal-wedge test material interface. Particular classes of metals have been found to provide the bulk acoustic modes necessary for production of a surface wave with extremely high frequency and angular collimation. The high frequency allows flaws and inhomogeneities to be examined with greater resolution. The high degree of angular collimation for the outgoing ultrasonic beam permits precision angular location of flaws and inhomogeneities in the test material surface.

An Electrochemical, Low-Frequency Seismic Micro-Sensor Based on MEMS with a Force-Balanced Feedback System

PubMed Central

Li, Guanglei; Wang, Junbo; Chen, Deyong; Chen, Lianhong; Xu, Chao

2017-01-01

Electrochemical seismic sensors are key components in monitoring ground vibration, which are featured with high performances in the low-frequency domain. However, conventional electrochemical seismic sensors suffer from low repeatability due to limitations in fabrication and limited bandwidth. This paper presents a micro-fabricated electrochemical seismic sensor with a force-balanced negative feedback system, mainly composed of a sensing unit including porous sensing micro electrodes immersed in an electrolyte solution and a feedback unit including a feedback circuit and a feedback magnet. In this study, devices were designed, fabricated, and characterized, producing comparable performances among individual devices. In addition, bandwidths and total harmonic distortions of the proposed devices with and without a negative feedback system were quantified and compared as 0.005–20 (feedback) Hz vs. 0.3–7 Hz (without feedback), 4.34 ± 0.38% (without feedback) vs. 1.81 ± 0.31% (feedback)@1 Hz@1 mm/s and 3.21 ± 0.25% (without feedback) vs. 1.13 ± 0.19% (feedback)@5 Hz@1 mm/s (ndevice = 6, n represents the number of the tested devices), respectively. In addition, the performances of the proposed MEMS electrochemical seismometers with feedback were compared to a commercial electrochemical seismic sensor (CME 6011), producing higher bandwidth (0.005–20 Hz vs. 0.016–30 Hz) and lower self-noise levels (−165.1 ± 6.1 dB vs. −137.7 dB at 0.1 Hz, −151.9 ± 7.5 dB vs. −117.8 dB at 0.02 Hz (ndevice = 6)) in the low-frequency domain. Thus, the proposed device may function as an enabling electrochemical seismometer in the fields requesting seismic monitoring at the ultra-low frequency domain. PMID:28902150

Negative differential resistance in GaN tunneling hot electron transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Zhichao; Nath, Digbijoy; Rajan, Siddharth

Room temperature negative differential resistance is demonstrated in a unipolar GaN-based tunneling hot electron transistor. Such a device employs tunnel-injected electrons to vary the electron energy and change the fraction of reflected electrons, and shows repeatable negative differential resistance with a peak to valley current ratio of 7.2. The device was stable when biased in the negative resistance regime and tunable by changing collector bias. Good repeatability and double-sweep characteristics at room temperature show the potential of such device for high frequency oscillators based on quasi-ballistic transport.

Realizing one-dimensional quantum and high-frequency transport features in aligned single-walled carbon nanotube ropes

NASA Astrophysics Data System (ADS)

Ncube, Siphephile; Chimowa, George; Chiguvare, Zivayi; Bhattacharyya, Somnath

2014-07-01

The superiority of the electronic transport properties of single-walled carbon nanotube (SWNT) ropes over SWNT mats is verified from low temperature and frequency-dependent transport. The overall change of resistance versus in nanotube mats shows that 3D variable range hopping is the dominant conduction mechanism within the 2-300 K range. The magneto-resistance (MR) is found to be predominantly negative with a parabolic nature, which can also be described by the hopping model. Although the positive upturn of the MR at low temperatures establishes the contribution from quantum interference, the inherent quantum transport in individual tubes is suppressed at elevated temperatures. Therefore, to minimize multi-channel effects from inter-tube interactions and other defects, two-terminal devices were fabricated from aligned SWNT (extracted from a mat) for low temperature transport as well as high-frequency measurements. In contrast to the mat, the aligned ropes exhibit step-like features in the differential conductance within the 80-300 K temperature range. The effects of plasmon propagation, unique to one dimension, were identified in electronic transport as a non-universal power-law dependence of the differential conductance on temperature and source-drain voltage. The complex impedance showed high power transmission capabilities up to 65 GHz as well as oscillations in the frequency range up to 30 GHz. The measurements suggest that aligned SWNT ropes have a realistic potential for high-speed device applications.

Single frequency free-running low noise compact extended-cavity semiconductor laser at high power level

NASA Astrophysics Data System (ADS)

Garnache, Arnaud; Myara, Mikhaël.; Laurain, A.; Bouchier, Aude; Perez, J. P.; Signoret, P.; Sagnes, I.; Romanini, D.

2017-11-01

We present a highly coherent semiconductor laser device formed by a ½-VCSEL structure and an external concave mirror in a millimetre high finesse stable cavity. The quantum well structure is diode-pumped by a commercial single mode GaAs laser diode system. This free running low noise tunable single-frequency laser exhibits >50mW output power in a low divergent circular TEM00 beam with a spectral linewidth below 1kHz and a relative intensity noise close to the quantum limit. This approach ensures, with a compact design, homogeneous gain behaviour and a sufficiently long photon lifetime to reach the oscillation-relaxation-free class-A regime, with a cut off frequency around 10MHz.

Cumulative Interference to Aircraft Radios from Multiple Portable Electronic Devices

NASA Technical Reports Server (NTRS)

Nguyen, Truong X.

2005-01-01

Cumulative interference effects from portable electronic devices (PEDs) located inside a passenger cabin are conservatively estimated for aircraft radio receivers. PEDs' emission powers in an aircraft radio frequency band are first scaled according to their locations' interference path loss (IPL) values, and the results are summed to determine the total interference power. The multiple-equipment-factor (MEF) is determined by normalizing the result against the worst case contribution from a single device. Conservative assumptions were made and MEF calculations were performed for Boeing 737's Localizer, Glide-slope, Traffic Collision Avoidance System, and Very High Frequency Communication radio systems where full-aircraft IPL data were available. The results show MEF for the systems to vary between 10 and 14 dB. The same process was also used on the more popular window/door IPL data, and the comparison show the multiple-equipment-factor results came within one decibel (dB) of each other.

Dynamically Reconfigurable Metadevice Employing Nanostructured Phase-Change Materials

DOE PAGES

Zhu, Zhihua; Evans, Philip G.; Haglund, Richard F.; ...

2017-07-21

Mastering dynamic free-space spectral control and modulation in the near-infrared (NIR) and optical regimes remains a challenging task that is hindered by the available functional materials at high frequencies. In this work, we have realized an efficient metadevice capable of spectral control by minimizing the thermal mass of a vanadium dioxide phase-change material (PCM) and placing the PCM at the feed gap of a bow-tie field antenna. The device has an experimentally measured tuning range of up to 360 nm in the NIR and a modulation depth of 33% at the resonant wavelength. The metadevice is configured for integrated andmore » local heating, leading to faster switching and more precise spatial control compared with devices based on phase-change thin films. We envisage that the combined advantages of this device will open new opportunities for signal processing, memory, security, and holography at optical frequencies.« less

Dynamically Reconfigurable Metadevice Employing Nanostructured Phase-Change Materials.

PubMed

Zhu, Zhihua; Evans, Philip G; Haglund, Richard F; Valentine, Jason G

2017-08-09

Mastering dynamic free-space spectral control and modulation in the near-infrared (NIR) and optical regimes remains a challenging task that is hindered by the available functional materials at high frequencies. In this work, we have realized an efficient metadevice capable of spectral control by minimizing the thermal mass of a vanadium dioxide phase-change material (PCM) and placing the PCM at the feed gap of a bow-tie field antenna. The device has an experimentally measured tuning range of up to 360 nm in the NIR and a modulation depth of 33% at the resonant wavelength. The metadevice is configured for integrated and local heating, leading to faster switching and more precise spatial control compared with devices based on phase-change thin films. We envisage that the combined advantages of this device will open new opportunities for signal processing, memory, security, and holography at optical frequencies.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Zhihua; Evans, Philip G.; Haglund, Richard F.

Mastering dynamic free-space spectral control and modulation in the near-infrared (NIR) and optical regimes remains a challenging task that is hindered by the available functional materials at high frequencies. In this work, we have realized an efficient metadevice capable of spectral control by minimizing the thermal mass of a vanadium dioxide phase-change material (PCM) and placing the PCM at the feed gap of a bow-tie field antenna. The device has an experimentally measured tuning range of up to 360 nm in the NIR and a modulation depth of 33% at the resonant wavelength. The metadevice is configured for integrated andmore » local heating, leading to faster switching and more precise spatial control compared with devices based on phase-change thin films. We envisage that the combined advantages of this device will open new opportunities for signal processing, memory, security, and holography at optical frequencies.« less

Physical-Mechanisms Based Reliability Analysis For Emerging Technologies

DTIC Science & Technology

2017-05-05

irradiation is great- ly enhanced by biasing the...devices during irradiation and/or applying high field stress be- fore irradiation . The resulting defect energy distributions were evaluated after... irradiation and/or high field stress via low-frequency noise measurements. Significant increases were observed in acceptor densities for defects with

Dynamics of fluidic devices with applications to rotor pitch links

NASA Astrophysics Data System (ADS)

Scarborough, Lloyd H., III

Coupling a Fluidic Flexible Matrix Composite (F2MC) to an air-pressurized fluid port produces a fundamentally new class of tunable vibration isolator. This fluidlastic device provides significant vibration reduction at an isolation frequency that can be tuned over a broad frequency range. The material properties and geometry of the F2MC element, as well as the port inertance, determine the isolation frequency. A unique feature of this device is that the port inertance depends on pressure so the isolation frequency can be adjusted by changing the air pressure. For constant port inertance, the isolation frequency is largely independent of the isolated mass so the device is robust to changes in load. A nonlinear model is developed to predict isolator length and port inertance. The model is linearized and the frequency response calculated. Experiments agree with theory, demonstrating a tunable isolation range from 9 Hz to 36 Hz and transmitted force reductions of up to 60 dB at the isolation frequency. Replacing rigid pitch links on rotorcraft with coupled fluidic devices has the potential to reduce the aerodynamic blade loads transmitted through the pitch links to the swashplate. Analytical models of two fluidic devices coupled with three different fluidic circuits are derived. These passive fluidlastic systems are tuned, by varying the fluid inertances and capacitances of each fluidic circuit, to reduce the transmitted pitch-link loads. The different circuit designs result in transmitted pitch link loads reduction at up to three main rotor harmonics. The simulation results show loads reduction at the targeted out-of-phase and in-phase harmonics of up to 88% and 93%, respectively. Experimental validation of two of the fluidic circuits demonstrates loads reduction of up to 89% at the out-of-phase isolation frequencies and up to 81% at the in-phase isolation frequencies. Replacing rigid pitch links on rotorcraft with fluidic pitch links changes the blade torsional impedance. At low frequency, the pitch link must have high impedance to pass through the pilot's collective and cyclic commands to control the aircraft. At higher frequencies, however, the pitch-link impedance can be tuned to change the blade pitching response to higher harmonic loads. Active blade control to produce higher harmonic pitch motions has been shown to reduce hub loads and increase rotor efficiency. This work investigates whether fluidic pitch links can passively provide these benefits. An analytical model of a fluidic pitch link is derived and incorporated into a rotor aeroelastic simulation for a rotor similar to that of the UH-60. Eighty-one simulations with varied fluidic pitch link parameters demonstrate that their impedance can be tailored to reduce rotor power and all six hub forces and moments. While no impedance was found that simultaneously reduced all components, the results include cases with reductions in the lateral 4/rev hub force of up to 91% and 4/rev hub pitching moment of up to 67%, and main rotor power of up to 5%.

A versatile rotary-stage high frequency probe station for studying magnetic films and devices

NASA Astrophysics Data System (ADS)

He, Shikun; Meng, Zhaoliang; Huang, Lisen; Yap, Lee Koon; Zhou, Tiejun; Panagopoulos, Christos

2016-07-01

We present a rotary-stage microwave probe station suitable for magnetic films and spintronic devices. Two stages, one for field rotation from parallel to perpendicular to the sample plane (out-of-plane) and the other intended for field rotation within the sample plane (in-plane) have been designed. The sample probes and micro-positioners are rotated simultaneously with the stages, which allows the field orientation to cover θ from 0∘ to 90∘ and φ from 0∘ to 360∘. θ and φ being the angle between the direction of current flow and field in a out-of-plane and an in-plane rotation, respectively. The operation frequency is up to 40 GHz and the magnetic field up to 1 T. The sample holder vision system and probe assembly are compactly designed for the probes to land on a wafer with diameter up to 3 cm. Using homemade multi-pin probes and commercially available high frequency probes, several applications including 4-probe DC measurements, the determination of domain wall velocity, and spin transfer torque ferromagnetic resonance are demonstrated.

Device and method for imaging of non-linear and linear properties of formations surrounding a borehole

DOEpatents

Johnson, Paul A; Tencate, James A; Le Bas, Pierre-Yves; Guyer, Robert; Vu, Cung Khac; Skelt, Christopher

2013-10-08

In some aspects of the disclosure, a method and an apparatus is disclosed for investigating material surrounding the borehole. The method includes generating within a borehole an intermittent low frequency vibration that propagates as a tube wave longitudinally to the borehole and induces a nonlinear response in one or more features in the material that are substantially perpendicular to a longitudinal axis of the borehole; generating within the borehole a sequence of high frequency pulses directed such that they travel longitudinally to the borehole within the surrounding material; and receiving, at one or more receivers positionable in the borehole, a signal that includes components from the low frequency vibration and the sequence of high frequency pulses during intermittent generation of the low frequency vibration, to investigate the material surrounding the borehole.

Frequency-tunable superconducting resonators via nonlinear kinetic inductance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vissers, M. R.; Hubmayr, J.; Sandberg, M.

2015-08-10

We have designed, fabricated, and tested a frequency-tunable high-Q superconducting resonator made from a niobium titanium nitride film. The frequency tunability is achieved by injecting a DC through a current-directing circuit into the nonlinear inductor whose kinetic inductance is current-dependent. We have demonstrated continuous tuning of the resonance frequency in a 180 MHz frequency range around 4.5 GHz while maintaining the high internal quality factor Q{sub i} > 180 000. This device may serve as a tunable filter and find applications in superconducting quantum computing and measurement. It also provides a useful tool to study the nonlinear response of a superconductor. In addition,more » it may be developed into techniques for measurement of the complex impedance of a superconductor at its transition temperature and for readout of transition-edge sensors.« less

Holmium hafnate: An emerging electronic device material

NASA Astrophysics Data System (ADS)

Pavunny, Shojan P.; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Scott, James F.; Katiyar, Ram S.

2015-03-01

We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho2Hf2O7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ˜20 and very low dielectric loss of ˜0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap Eg of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

Design of active temperature compensated composite free-free beam MEMS resonators in a standard process

NASA Astrophysics Data System (ADS)

Xereas, George; Chodavarapu, Vamsy P.

2014-03-01

Frequency references are used in almost every modern electronic device including mobile phones, personal computers, and scientific and medical instrumentation. With modern consumer mobile devices imposing stringent requirements of low cost, low complexity, compact system integration and low power consumption, there has been significant interest to develop batch-manufactured MEMS resonators. An important challenge for MEMS resonators is to match the frequency and temperature stability of quartz resonators. We present 1MHz and 20MHz temperature compensated Free-Free beam MEMS resonators developed using PolyMUMPS, which is a commercial multi-user process available from MEMSCAP. We introduce a novel temperature compensation technique that enables high frequency stability over a wide temperature range. We used three strategies: passive compensation by using a structural gold (Au) layer on the resonator, active compensation through using a heater element, and a Free-Free beam design that minimizes the effects of thermal mismatch between the vibrating structure and the substrate. Detailed electro-mechanical simulations were performed to evaluate the frequency response and Quality Factor (Q). Specifically, for the 20MHz device, a Q of 10,000 was obtained for the passive compensated design. Finite Element Modeling (FEM) simulations were used to evaluate the Temperature Coefficient of frequency (TCf) of the resonators between -50°C and 125°C which yielded +0.638 ppm/°C for the active compensated, compared to -1.66 ppm/°C for the passively compensated design and -8.48 ppm/°C for uncompensated design for the 20MHz device. Electro-thermo-mechanical simulations showed that the heater element was capable of increasing the temperature of the resonators by approximately 53°C with an applied voltage of 10V and power consumption of 8.42 mW.

Ultrasonic speech translator and communications system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akerman, M.A.; Ayers, C.W.; Haynes, H.D.

1996-07-23

A wireless communication system undetectable by radio frequency methods for converting audio signals, including human voice, to electronic signals in the ultrasonic frequency range, transmitting the ultrasonic signal by way of acoustical pressure waves across a carrier medium, including gases, liquids, or solids, and reconverting the ultrasonic acoustical pressure waves back to the original audio signal. The ultrasonic speech translator and communication system includes an ultrasonic transmitting device and an ultrasonic receiving device. The ultrasonic transmitting device accepts as input an audio signal such as human voice input from a microphone or tape deck. The ultrasonic transmitting device frequency modulatesmore » an ultrasonic carrier signal with the audio signal producing a frequency modulated ultrasonic carrier signal, which is transmitted via acoustical pressure waves across a carrier medium such as gases, liquids or solids. The ultrasonic receiving device converts the frequency modulated ultrasonic acoustical pressure waves to a frequency modulated electronic signal, demodulates the audio signal from the ultrasonic carrier signal, and conditions the demodulated audio signal to reproduce the original audio signal at its output. 7 figs.« less

Ultrasonic speech translator and communications system

DOEpatents

Akerman, M. Alfred; Ayers, Curtis W.; Haynes, Howard D.

1996-01-01

A wireless communication system undetectable by radio frequency methods for converting audio signals, including human voice, to electronic signals in the ultrasonic frequency range, transmitting the ultrasonic signal by way of acoustical pressure waves across a carrier medium, including gases, liquids, or solids, and reconverting the ultrasonic acoustical pressure waves back to the original audio signal. The ultrasonic speech translator and communication system (20) includes an ultrasonic transmitting device (100) and an ultrasonic receiving device (200). The ultrasonic transmitting device (100) accepts as input (115) an audio signal such as human voice input from a microphone (114) or tape deck. The ultrasonic transmitting device (100) frequency modulates an ultrasonic carrier signal with the audio signal producing a frequency modulated ultrasonic carrier signal, which is transmitted via acoustical pressure waves across a carrier medium such as gases, liquids or solids. The ultrasonic receiving device (200) converts the frequency modulated ultrasonic acoustical pressure waves to a frequency modulated electronic signal, demodulates the audio signal from the ultrasonic carrier signal, and conditions the demodulated audio signal to reproduce the original audio signal at its output (250).

The influence of ergonomic devices on mechanical load during patient handling activities in nursing homes.

PubMed

Koppelaar, Elin; Knibbe, Hanneke J J; Miedema, Harald S; Burdorf, Alex

2012-07-01

Mechanical load during patient handling activities is an important risk factor for low back pain among nursing personnel. The aims of this study were to describe required and actual use of ergonomic devices during patient handling activities and to assess the influence of these ergonomic devices on mechanical load during patient handling activities. For each patient, based on national guidelines, it was recorded which specific ergonomic devices were required during distinct patient handling activities, defined by transferring a patient, providing personal care, repositioning patients in the bed, and putting on and taking off anti-embolism stockings. During real-time observations over ~60 h among 186 nurses on 735 separate patient handling activities in 17 nursing homes, it was established whether ergonomic devices were actually used. Mechanical load was assessed through observations of frequency and duration of a flexed or rotated trunk >30° and frequency of pushing, pulling, lifting or carrying requiring forces <100 N, between 100 and 230 N, and >230 N from start to end of each separate patient handling activity. The number of patients and nurses per ward and the ratio of nurses per patient were used as ward characteristics with potential influence on mechanical load. A mixed-effect model for repeated measurements was used to determine the influence of ergonomic devices and ward characteristics on mechanical load. Use of ergonomic devices was required according to national guidelines in 520 of 735 (71%) separate patient handling activities, and actual use was observed in 357 of 520 (69%) patient handling activities. A favourable ratio of nurses per patient was associated with a decreased duration of time spent in awkward back postures during handling anti-embolism stocking (43%), patient transfers (33%), and personal care of patients (24%) and also frequency of manually lifting patients (33%). Use of lifting devices was associated with a lower frequency of forces exerted (64%), adjustable bed and shower chairs with a shorter duration of awkward back postures (38%), and an anti-embolism stockings slide with a lower frequency of forces exerted (95%). In wards in nursing homes with a higher number of staff less awkward back postures as well as forceful lifting were observed during patient handling activities. The use of ergonomic devices was high and associated with less forceful movements and awkward back postures. Both aspects will most likely contribute to the prevention of low back pain among nurses.

Portable device for detection of petit mal epilepsy

NASA Technical Reports Server (NTRS)

Smith, R. G.; Houge, J. C.; Webster, J. G.

1979-01-01

A portable device that analyzes the electroencephalogram to determine if petit mal epilepsy waveforms are present is developed and tested. Clinicians should find it useful in diagnosing seizure activity of their patients. The micropower, battery-operated, portable device indicates a seizure has occurred if three criteria are satisfied: (1) frequencies of 2.5-7 Hz, (2) large-amplitude waves, and (3) minimum number of waves per second. Levels and counts are adjustable, thus insuring high reliability against noise artifacts and permitting each subject to be individually fitted. The device has shown promise in giving the patient a possible mechanism of seizure control or suppression.

Modelling of optoelectronic circuits based on resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Rei, João. F. M.; Foot, James A.; Rodrigues, Gil C.; Figueiredo, José M. L.

2017-08-01

Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.

T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications

NASA Technical Reports Server (NTRS)

Fung, Andy; Samoska, Lorene; Velebir, Jim; Siege, Peter; Rodwell, Mark; Paidi, Vamsi; Griffth, Zach; Urteaga, Miguel; Malik, Roger

2004-01-01

We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield.

Electrostatic energy harvesting device with dual resonant structure for wideband random vibration sources at low frequency.

PubMed

Zhang, Yulong; Wang, Tianyang; Zhang, Ai; Peng, Zhuoteng; Luo, Dan; Chen, Rui; Wang, Fei

2016-12-01

In this paper, we present design and test of a broadband electrostatic energy harvester with a dual resonant structure, which consists of two cantilever-mass subsystems each with a mass attached at the free edge of a cantilever. Comparing to traditional devices with single resonant frequency, the proposed device with dual resonant structure can resonate at two frequencies. Furthermore, when one of the cantilever-masses is oscillating at resonance, the vibration amplitude is large enough to make it collide with the other mass, which provides strong mechanical coupling between the two subsystems. Therefore, this device can harvest a decent power output from vibration sources at a broad frequency range. During the measurement, continuous power output up to 6.2-9.8 μW can be achieved under external vibration amplitude of 9.3 m/s 2 at a frequency range from 36.3 Hz to 48.3 Hz, which means the bandwidth of the device is about 30% of the central frequency. The broad bandwidth of the device provides a promising application for energy harvesting from the scenarios with random vibration sources. The experimental results indicate that with the dual resonant structure, the vibration-to-electricity energy conversion efficiency can be improved by 97% when an external random vibration with a low frequency filter is applied.

High-speed electronic beam steering using injection locking of a laser-diode array

NASA Astrophysics Data System (ADS)

Swanson, E. A.; Abbas, G. L.; Yang, S.; Chan, V. W. S.; Fujimoto, J. G.

1987-01-01

High-speed electronic steering of the output beam of a 10-stripe laser-diode array is reported. The array was injection locked to a single-frequency laser diode. High-speed steering of the locked 0.5-deg-wide far-field lobe is demonstrated either by modulating the injection current of the array or by modulating the frequency of the master laser. Closed-loop tracking bandwidths of 70 kHz and 3 MHz, respectively, were obtained. The beam-steering bandwidths are limited by the FM responses of the modulated devices for both techniques.

Characterization of devices, circuits, and high-temperature superconductor transmission lines by electro-optic testing

NASA Technical Reports Server (NTRS)

Whitaker, John F.

1991-01-01

The development of a capability for testing transmission lines, devices, and circuits using the optically-based technique of electro-optics sampling was the goal of this project. Electro-optic network analysis of a high-speed device was demonstrated. The project involved research on all of the facets necessary in order to realize this result, including the discovery of the optimum electronic pulse source, development of an adequate test fixture, improvement of the electro-optic probe tip, and identification of a device which responded at high frequency but did not oscillate in the test fixture. In addition, during the process of investigating patterned high-critical-temperature superconductors, several non-contacting techniques for the determination of the transport properties of high T(sub c) films were developed and implemented. These are a transient, optical pump-probe, time-resolved reflectivity experiment, an impulsive-stimulated Raman scattering experiment, and a terahertz-beam coherent-spectroscopy experiment. The latter technique has enabled us to measure both the complex refractive index of an MgO substrate used for high-T(sub c) films and the complex conductivity of a YBa2Cu3O(7-x) sample. This information was acquired across an extremely wide frequency range: from the microwave to the submillimeter-wave regime. The experiments on the YBCO were conducted without patterning of, or contact to, the thin film. Thus, the need for the more difficult transmission-line experiments was eliminated. Progress in all of these areas was made and is documented in a number of papers. These papers may be found in the section listing the abstracts of the publications that were issued during the course of the research.

Fly Eye radar: detection through high scattered media

NASA Astrophysics Data System (ADS)

Molchanov, Pavlo; Gorwara, Ashok

2017-05-01

Longer radio frequency waves better penetrating through high scattered media than millimeter waves, but imaging resolution limited by diffraction at longer wavelength. Same time frequency and amplitudes of diffracted waves (frequency domain measurement) provides information of object. Phase shift of diffracted waves (phase front in time domain) consists information about shape of object and can be applied for reconstruction of object shape or even image by recording of multi-frequency digital hologram. Spectrum signature or refracted waves allows identify the object content. Application of monopulse method with overlap closely spaced antenna patterns provides high accuracy measurement of amplitude, phase, and direction to signal source. Digitizing of received signals separately in each antenna relative to processor time provides phase/frequency independence. Fly eye non-scanning multi-frequency radar system provides simultaneous continuous observation of multiple targets and wide possibilities for stepped frequency, simultaneous frequency, chaotic frequency sweeping waveform (CFS), polarization modulation for reliable object detection. Proposed c-band fly eye radar demonstrated human detection through 40 cm concrete brick wall with human and wall material spectrum signatures and can be applied for through wall human detection, landmines, improvised explosive devices detection, underground or camouflaged object imaging.

Monolithic device for modelocking and stabilization of frequency combs.

PubMed

Lee, C-C; Hayashi, Y; Silverman, K L; Feldman, A; Harvey, T; Mirin, R P; Schibli, T R

2015-12-28

We demonstrate a device that integrates a III-V semiconductor saturable absorber mirror with a graphene electro-optic modulator, which provides a monolithic solution to modelocking and noise suppression in a frequency comb. The device offers a pure loss modulation bandwidth exceeding 5 MHz and only requires a low voltage driver. This hybrid device provides not only compactness and simplicity in laser cavity design, but also small insertion loss, compared to the previous metallic-mirror-based modulators. We believe this work paves the way to portable and fieldable phase-coherent frequency combs.

Fabrication and characterization of physically defined quantum dots on a boron-doped silicon-on-insulator substrate

NASA Astrophysics Data System (ADS)

Mizoguchi, Seiya; Shimatani, Naoki; Kobayashi, Mizuki; Makino, Takaomi; Yamaoka, Yu; Kodera, Tetsuo

2018-04-01

We study hole transport properties in physically defined p-type silicon quantum dots (QDs) on a heavily doped silicon-on-insulator (SOI) substrate. We observe Coulomb diamonds using single QDs and estimate the charging energy as ∼1.6 meV. We obtain the charge stability diagram of double QDs using single QDs as a charge sensor. This is the first demonstration of charge sensing in p-type heavily doped silicon QDs. For future time-resolved measurements, we apply radio-frequency reflectometry using impedance matching of LC circuits to the device. We observe the resonance and estimate the capacitance as ∼0.12 pF from the resonant frequency. This value is smaller than that of the devices with top gates on nondoped SOI substrate. This indicates that high-frequency signals can be applied efficiently to p-type silicon QDs without top gates.

Micro and nano devices in passive millimetre wave imaging systems

NASA Astrophysics Data System (ADS)

Appleby, R.

2013-06-01

The impact of micro and nano technology on millimetre wave imaging from the post war years to the present day is reviewed. In the 1950s whisker contacted diodes in mixers and vacuum tubes were used to realise both radiometers and radars but required considerable skill to realise the performance needed. Development of planar semiconductor devices such as Gunn and Schottky diodes revolutionised mixer performance and provided considerable improvement. The next major breakthrough was high frequency transistors based on gallium arsenide which were initially used at intermediate frequencies but later after further development at millimeter wave frequencies. More recently Monolithic Microwave Integrated circuits(MMICs) offer exceptional performance and the opportunity for innovative design in passive imaging systems. In the future the use of micro and nano technology will continue to drive system performance and we can expect to see integration of antennae, millimetre wave and sub millimetre wave circuits and signal processing.

A broadband terahertz ultrathin multi-focus lens

PubMed Central

He, Jingwen; Ye, Jiasheng; Wang, Xinke; Kan, Qiang; Zhang, Yan

2016-01-01

Ultrathin transmission metasurface devices are designed on the basis of the Yang-Gu amplitude-phase retrieval algorithm for focusing the terahertz (THz) radiation into four or nine spots with focal spacing of 2 or 3 mm at a frequency of 0.8 THz. The focal properties are experimentally investigated in detail, and the results agree well with the theoretical expectations. The designed THz multi-focus lens (TMFL) demonstrates a good focusing function over a broad frequency range from 0.3 to 1.1 THz. As a transmission-type device based on metasurface, the diffraction efficiency of the TMFL can be as high as 33.92% at the designed frequency. The imaging function of the TMFL is also demonstrated experimentally and clear images are obtained. The proposed method produces an ultrathin, low-cost, and broadband multi-focus lens for THz-band application PMID:27346430

Rare earth doped M-type hexaferrites; ferromagnetic resonance and magnetization dynamics

NASA Astrophysics Data System (ADS)

Sharma, Vipul; Kumari, Shweta; Kuanr, Bijoy K.

2018-05-01

M-type hexagonal barium ferrites come in the category of magnetic material that plays a key role in electromagnetic wave propagation in various microwave devices. Due to their large magnetic anisotropy and large magnetization, their operating frequency exceeds above 50 GHz. Doping is a way to vary its magnetic properties to such an extent that its ferromagnetic resonance (FMR) response can be tuned over a broad frequency band. We have done a complete FMR study of rare earth elements neodymium (Nd) and samarium (Sm), with cobalt (Co) as base, doped hexaferrite nanoparticles (NPs). X-ray diffractometry, vibrating sample magnetometer (VSM), and ferromagnetic resonance (FMR) techniques were used to characterize the microstructure and magnetic properties of doped hexaferrite nanoparticles. Using proper theoretical electromagnetic models, various parameters are extracted from FMR data which play important role in designing and fabricating high-frequency microwave devices.