Why aren’t they happy? An analysis of end-user satisfaction with Electronic health records

PubMed Central

Unni, Prasad; Staes, Catherine; Weeks, Howard; Kramer, Heidi; Borbolla, Damion; Slager, Stacey; Taft, Teresa; Chidambaram, Valliammai; Weir, Charlene

2016-01-01

Introduction. Implementations of electronic health records (EHR) have been met with mixed outcome reviews. Complaints about these systems have led to many attempts to have useful measures of end-user satisfaction. However, most user satisfaction assessments do not focus on high-level reasoning, despite the complaints of many physicians. Our study attempts to identify some of these determinants. Method. We developed a user satisfaction survey instrument, based on pre-identified and important clinical and non-clinical clinician tasks. We surveyed a sample of in-patient physicians and focused on using exploratory factor analyses to identify underlying high-level cognitive tasks. We used the results to create unique, orthogonal variables representative of latent structure predictive of user satisfaction. Results. Our findings identified 3 latent high-level tasks that were associated with end-user satisfaction: a) High- level clinical reasoning b) Communicate/coordinate care and c) Follow the rules/compliance. Conclusion: We were able to successfully identify latent variables associated with satisfaction. Identification of communicability and high-level clinical reasoning as important factors determining user satisfaction can lead to development and design of more usable electronic health records with higher user satisfaction. PMID:28269962

High accuracy electronic material level sensor

DOEpatents

McEwan, T.E.

1997-03-11

The High Accuracy Electronic Material Level Sensor (electronic dipstick) is a sensor based on time domain reflectometry (TDR) of very short electrical pulses. Pulses are propagated along a transmission line or guide wire that is partially immersed in the material being measured; a launcher plate is positioned at the beginning of the guide wire. Reflected pulses are produced at the material interface due to the change in dielectric constant. The time difference of the reflections at the launcher plate and at the material interface are used to determine the material level. Improved performance is obtained by the incorporation of: (1) a high accuracy time base that is referenced to a quartz crystal, (2) an ultrawideband directional sampler to allow operation without an interconnect cable between the electronics module and the guide wire, (3) constant fraction discriminators (CFDs) that allow accurate measurements regardless of material dielectric constants, and reduce or eliminate errors induced by triple-transit or ``ghost`` reflections on the interconnect cable. These improvements make the dipstick accurate to better than 0.1%. 4 figs.

High accuracy electronic material level sensor

DOEpatents

McEwan, Thomas E.

1997-01-01

The High Accuracy Electronic Material Level Sensor (electronic dipstick) is a sensor based on time domain reflectometry (TDR) of very short electrical pulses. Pulses are propagated along a transmission line or guide wire that is partially immersed in the material being measured; a launcher plate is positioned at the beginning of the guide wire. Reflected pulses are produced at the material interface due to the change in dielectric constant. The time difference of the reflections at the launcher plate and at the material interface are used to determine the material level. Improved performance is obtained by the incorporation of: 1) a high accuracy time base that is referenced to a quartz crystal, 2) an ultrawideband directional sampler to allow operation without an interconnect cable between the electronics module and the guide wire, 3) constant fraction discriminators (CFDs) that allow accurate measurements regardless of material dielectric constants, and reduce or eliminate errors induced by triple-transit or "ghost" reflections on the interconnect cable. These improvements make the dipstick accurate to better than 0.1%.

Determination of the N2 recombination rate coefficient in the ionosphere

NASA Technical Reports Server (NTRS)

Orsini, N.; Torr, D. G.; Brinton, H. C.; Brace, L. H.; Hanson, W. B.; Hoffman, J. H.; Nier, A. O.

1977-01-01

Measurements of aeronomic parameters made by the Atmosphere Explorer-C satellite are used to determine the recombination rate coefficient of N2(+) in the ionosphere. The rate is found to increase significantly with decreasing electron density. Values obtained range from approximately 1.4 x 10 to the -7th to 3.8 x 10 to the -7th cu cm/sec. This variation is explained in a preliminary way in terms of an increase in the rate coefficient with vibrational excitation. Thus, high electron densities depopulate high vibrational levels reducing the effective recombination rate, whereas, low electron densities result in an enhancement in the population of high vibrational levels, thus, increasing the effective recombination rate.

Developing conjugated polymers with high electron affinity by replacing a C-C unit with a B←N unit.

PubMed

Dou, Chuandong; Ding, Zicheng; Zhang, Zijian; Xie, Zhiyuan; Liu, Jun; Wang, Lixiang

2015-03-16

The key parameters of conjugated polymers are lowest unoccupied molecular orbital (LUMO) and highest occupied molecular orbital (HOMO) energy levels. Few approaches can simultaneously lower LUMO and HOMO energy levels of conjugated polymers to a large extent (>0.5 eV). Disclosed herein is a novel strategy to decrease both LUMO and HOMO energy levels of conjugated polymers by about 0.6 eV through replacement of a C-C unit by a B←N unit. The replacement makes the resulting polymer transform from an electron donor into an electron acceptor, and is proven by fluorescence quenching experiments and the photovoltaic response. This work not only provides an effective approach to tune the LUMO/HOMO energy levels of conjugated polymers, but also uses organic boron chemistry as a new toolbox to develop conjugated polymers with high electron affinity for polymer optoelectronic devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale

NASA Astrophysics Data System (ADS)

Lin, Chung-Han; Doutt, D. R.; Mishra, U. K.; Merz, T. A.; Brillson, L. J.

2010-11-01

Nanoscale Kelvin probe force microscopy and depth-resolved cathodoluminescence spectroscopy reveal an electronic defect evolution inside operating AlGaN/GaN high electron mobility transistors with degradation under electric-field-induced stress. Off-state electrical stress results in micron-scale areas within the extrinsic drain expanding and decreasing in electric potential, midgap defects increasing by orders-of-magnitude at the AlGaN layer, and local Fermi levels lowering as gate-drain voltages increase above a characteristic stress threshold. The pronounced onset of defect formation, Fermi level movement, and transistor degradation at the threshold gate-drain voltage of J. A. del Alamo and J. Joh [Microelectron. Reliab. 49, 1200 (2009)] is consistent with crystal deformation and supports the inverse piezoelectric model of high electron mobility transistor degradation.

Readout Electronics for the ATLAS LAr Calorimeter at HL-LHC

NASA Astrophysics Data System (ADS)

Chen, Hucheng; ATLAS Liquid Argon Calorimeter Group

The ATLAS Liquid Argon (LAr) calorimeters are high precision, high sensitivity and high granularity detectors designed to provide precision measurements of electrons, photons, jets and missing transverse energy. ATLAS and its LAr calorimeters have been operating and collecting proton-proton collisions at LHC since 2009. The current front-end electronics of the LAr calorimeters need to be upgraded to sustain the higher radiation levels and data rates expected at the upgraded high luminosity LHC machine (HL-LHC), which will have 5 times more luminosity than the LHC in its ultimate configuration. The complexity of the present electronics and the obsolescence of some of components of which it is made, will not allow a partial replacement of the system. A completely new readout architecture scheme is under study and many components are being developed in various R&D programs of the LAr Calorimeter Group.The new front-end readout electronics will send data continuously at each bunch crossing through high speed radiation resistant optical links. The data will be processed real-time with the possibility of implementing trigger algorithms for clusters and electron/photon identification at a higher granularity than that which is currently implemented. The new architecture will eliminate the intrinsic limitation presently existing on Level-1 trigger acceptance. This article is an overview of the R&D activities which covers architectural design aspects of the new electronics as well as some detailed progress on the development of several ASICs needed, and preliminary studies with FPGAs to cover the backend functions including part of the Level-1 trigger requirements. A recently proposed staged upgrade with hybrid Tower Builder Board (TBB) is also described.

High-Intensity Sweeteners in Alternative Tobacco Products.

PubMed

Miao, Shida; Beach, Evan S; Sommer, Toby J; Zimmerman, Julie B; Jordt, Sven-Eric

2016-11-01

Sweeteners in tobacco products may influence use initiation and reinforcement, with special appeal to adolescents. Recent analytical studies of smokeless tobacco products (snuff, snus, dissolvables) detected flavorants identical to those added to confectionary products such as hard candy and chewing gum. However, these studies did not determine the levels of sweeteners. The objective of the present study was to quantify added sweeteners in smokeless tobacco products, a dissolvable product, electronic cigarette liquids and to compare with sweetener levels in confectionary products. Sweetener content of US-sourced smokeless tobacco, electronic cigarette liquid, and confectionary product samples was analyzed by liquid chromatography-electrospray ionization-mass spectrometry (LC-ESI-MS). All smokeless products contained synthetic high intensity sweeteners, with snus and dissolvables exceeding levels in confectionary products (as much as 25-fold). All snus samples contained sucralose and most also aspartame, but no saccharin. In contrast, all moist snuff samples contained saccharin. The dissolvable sample contained sucralose and sorbitol. Ethyl maltol was the most common sweet-associated component in electronic cigarette liquids. Sweetener content was dependent on product category, with saccharin in moist snuff, an older category, sucralose added at high levels to more recently introduced products (snus, dissolvable) and ethyl maltol in electronic cigarette liquid. The very high sweetener concentrations may be necessary for the consumer to tolerate the otherwise aversive flavors of tobacco ingredients. Regulation of sweetener levels in smokeless tobacco products may be an effective measure to modify product attractiveness, initiation and use patterns. Dissolvables, snus and electronic cigarettes have been promoted as risk-mitigation products due to their relatively low content of nitrosamines and other tobacco toxicants. This study is the first to quantify high intensity sweeteners in snus and dissolvable products. Snus and dissolvables contain the high intensity sweetener, sucralose, at levels higher than in confectionary products. The high sweetness of alternative tobacco products makes these products attractive to adolescents. Regulation of sweetener content in non-cigarette products is suggested as an efficient means to control product palatability and to reduce initiation in adolescents. © The Author 2016. Published by Oxford University Press on behalf of the Society for Research on Nicotine and Tobacco.

High-Intensity Sweeteners in Alternative Tobacco Products

PubMed Central

Miao, Shida; Beach, Evan S.; Sommer, Toby J.; Zimmerman, Julie B.

2016-01-01

Introduction: Sweeteners in tobacco products may influence use initiation and reinforcement, with special appeal to adolescents. Recent analytical studies of smokeless tobacco products (snuff, snus, dissolvables) detected flavorants identical to those added to confectionary products such as hard candy and chewing gum. However, these studies did not determine the levels of sweeteners. The objective of the present study was to quantify added sweeteners in smokeless tobacco products, a dissolvable product, electronic cigarette liquids and to compare with sweetener levels in confectionary products. Methods: Sweetener content of US-sourced smokeless tobacco, electronic cigarette liquid, and confectionary product samples was analyzed by liquid chromatography-electrospray ionization–mass spectrometry (LC-ESI-MS). Results: All smokeless products contained synthetic high intensity sweeteners, with snus and dissolvables exceeding levels in confectionary products (as much as 25-fold). All snus samples contained sucralose and most also aspartame, but no saccharin. In contrast, all moist snuff samples contained saccharin. The dissolvable sample contained sucralose and sorbitol. Ethyl maltol was the most common sweet-associated component in electronic cigarette liquids. Discussion: Sweetener content was dependent on product category, with saccharin in moist snuff, an older category, sucralose added at high levels to more recently introduced products (snus, dissolvable) and ethyl maltol in electronic cigarette liquid. The very high sweetener concentrations may be necessary for the consumer to tolerate the otherwise aversive flavors of tobacco ingredients. Regulation of sweetener levels in smokeless tobacco products may be an effective measure to modify product attractiveness, initiation and use patterns. Implications: Dissolvables, snus and electronic cigarettes have been promoted as risk-mitigation products due to their relatively low content of nitrosamines and other tobacco toxicants. This study is the first to quantify high intensity sweeteners in snus and dissolvable products. Snus and dissolvables contain the high intensity sweetener, sucralose, at levels higher than in confectionary products. The high sweetness of alternative tobacco products makes these products attractive to adolescents. Regulation of sweetener content in non-cigarette products is suggested as an efficient means to control product palatability and to reduce initiation in adolescents. PMID:27217475

High power beta electron device - Beyond betavoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ayers, William M.; Gentile, Charles A.

Developing watt level power sources with beta emitting radioisotopes has been limited by the inability to utilize high energy (> 100 KeV) beta emitters at high radioisotope loadings without damaging the energy conversion materials. A new type of beta electron power source is described that removes those restrictions. This approach contains the radioisotope in a beta transparent titanium tube and confines beta electrons emitted through the tube wall to spiral trajectories around the tube with an axial magnetic field. The confined beta electrons dissipate energy though multiple interactions with surrounding excimer precursor gas atoms to efficiently generate photons. Photovoltaic cellsmore » convert the photons to electrical power. Since the beta electrons dissipate energy in the excimer precursor gas, the device can be loaded with more than 10 13 Bq of radioisotope to generate 100 milliwatt to watt levels of electrical power without damaging the device materials or degrading its performance. Furthermore, the power source can use a variety of beta radioisotopes and scales by stacking the devices.« less

High power beta electron device - Beyond betavoltaics

DOE PAGES

Ayers, William M.; Gentile, Charles A.

2017-11-10

Developing watt level power sources with beta emitting radioisotopes has been limited by the inability to utilize high energy (> 100 KeV) beta emitters at high radioisotope loadings without damaging the energy conversion materials. A new type of beta electron power source is described that removes those restrictions. This approach contains the radioisotope in a beta transparent titanium tube and confines beta electrons emitted through the tube wall to spiral trajectories around the tube with an axial magnetic field. The confined beta electrons dissipate energy though multiple interactions with surrounding excimer precursor gas atoms to efficiently generate photons. Photovoltaic cellsmore » convert the photons to electrical power. Since the beta electrons dissipate energy in the excimer precursor gas, the device can be loaded with more than 10 13 Bq of radioisotope to generate 100 milliwatt to watt levels of electrical power without damaging the device materials or degrading its performance. Furthermore, the power source can use a variety of beta radioisotopes and scales by stacking the devices.« less

High power beta electron device - Beyond betavoltaics.

PubMed

Ayers, William M; Gentile, Charles A

2018-01-01

Developing watt level power sources with beta emitting radioisotopes has been limited by the inability to utilize high energy (> 100KeV) beta emitters at high radioisotope loadings without damaging the energy conversion materials. A new type of beta electron power source is described that removes those restrictions. The approach contains the radioisotope in a beta transparent titanium tube and confines beta electrons emitted through the tube wall to spiral trajectories around the tube with an axial magnetic field. The confined beta electrons dissipate energy though multiple interactions with surrounding excimer precursor gas atoms to efficiently generate photons. Photovoltaic cells convert the photons to electrical power. Since the beta electrons dissipate energy in the excimer precursor gas, the device can be loaded with more than 10 13 Bq of radioisotope to generate 100 milliwatt to watt levels of electrical power without damaging the device materials or degrading its performance. The power source can use a variety of beta radioisotopes and scales by stacking the devices. Copyright © 2017. Published by Elsevier Ltd.

Combination free electron and gaseous laser

DOEpatents

Brau, Charles A.; Rockwood, Stephen D.; Stein, William E.

1980-01-01

A multiple laser having one or more gaseous laser stages and one or more free electron stages. Each of the free electron laser stages is sequentially pumped by a microwave linear accelerator. Subsequently, the electron beam is directed through a gaseous laser, in the preferred embodiment, and in an alternative embodiment, through a microwave accelerator to lower the energy level of the electron beam to pump one or more gaseous lasers. The combination laser provides high pulse repetition frequencies, on the order of 1 kHz or greater, high power capability, high efficiency, and tunability in the synchronous production of multiple beams of coherent optical radiation.

High-level spacecraft charging in the low-altitude polar auroral environment

NASA Astrophysics Data System (ADS)

Gussenhoven, M. S.; Hardy, D. A.; Rich, F.; Burke, W. J.; Yeh, H.-C.

1985-11-01

Regions of intense keV electron precipitation, such as inverted-V structures, at times colocate with ionospheric plasma depletion regions in the high-latitude polar ionosphere. When Defense Meteorological Satellite Program (DMSP) F6 and F7 satellites, at 840 km, enter these regions in darkness, ion signatures of high spacecraft-to-ambient plasma potential differences (several hundred volts negative) are observed with the new SSJ/4 ion detectors. A systematic survey of charging events and the environment in which they occur was made using the DMSP F6 and F7 precipitating ion and electron detectors, the SSIE thermal plasma probes, and the SSM (F7 only) vector magnetometer. The charging events of November 26, 1983, are analyzed in detail since they occurred on both satellites. Critical levels of number flux and average energy for the precipitating electrons, and the threshold density of the thermal ionospheric ions are defined for different levels of spacecraft charging.

Electron mobility on the surface of liquid Helium: influence of surface level atoms and depopulation of lowest subbands

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grigoriev, P. D., E-mail: grigorev@itp.ac.ru; Dyugaev, A. M.; Lebedeva, E. V.

2008-02-15

The temperature dependence of electron mobility is examined. We calculate the contribution to the electron scattering rate from the surface level atoms (SLAs), proposed in [10]. This contribution is substantial at low temperatures T < 0.5, when the He vapor concentration is exponentially small. We also study the effect of depopulation of the lowest energy subband, which leads to an increase in the electron mobility at high temperature. The results explain certain long-standing discrepancies between the existing theory and experiment on electron mobility on the surface of liquid helium.

10 CFR 60.4 - Communications and records.

Code of Federal Regulations, 2012 CFR

2012-01-01

... NUCLEAR REGULATORY COMMISSION (CONTINUED) DISPOSAL OF HIGH-LEVEL RADIOACTIVE WASTES IN GEOLOGIC... offices at 11555 Rockville Pike, Rockville, Maryland; or, where practicable, by electronic submission, for example, via Electronic Information Exchange, or CD-ROM. Electronic submissions must be made in a manner...

Local electronic effects and irradiation resistance in high-entropy alloys

DOE PAGES

Egami, Takeshi; Stocks, George Malcolm; Nicholson, Don; ...

2015-08-14

High-entropy alloys are multicomponent solid solutions in which various elements with different chemistries and sizes occupy the same crystallographic lattice sites. Thus, none of the atoms perfectly fit the lattice site, giving rise to considerable local lattice distortions and atomic-level stresses. These characteristics can be beneficial for performance under both radiation and in a high-temperature environment, making them attractive candidates as nuclear materials. We discuss electronic origin of the atomic-level stresses based upon first-principles calculations using a density functional theory approach.

A High School Level Course On Robot Design And Construction

NASA Astrophysics Data System (ADS)

Sadler, Paul M.; Crandall, Jack L.

1984-02-01

The Robotics Design and Construction Class at Sehome High School was developed to offer gifted and/or highly motivated students an in-depth introduction to a modern engineering topic. The course includes instruction in basic electronics, digital and radio electronics, construction skills, robotics literacy, construction of the HERO 1 Heathkit Robot, computer/ robot programming, and voice synthesis. A key element which leads to the success of the course is the involvement of various community assets including manpower and financial assistance. The instructors included a physics/electronics teacher, a computer science teacher, two retired engineers, and an electronics technician.

Re-Visiting the Electronic Energy Map of the Copper Dimer by Double-Resonant Four-Wave Mixing

NASA Astrophysics Data System (ADS)

Visser, Bradley; Bornhauser, Peter; Beck, Martin; Knopp, Gregor; Marquardt, Roberto; Gourlaouen, Christophe; van Bokhoven, Jeroen A.; Radi, Peter

2017-06-01

The copper dimer is one of the most studied transition metal (TM) diatomics due to its alkali-metal like electronic shell structure, strongly bound ground state and chemical reactivity. The high electronic promotion energy in the copper atom yields numerous low-lying electronic states compared to TM dimers with d)-hole electronic configurations. Thus, through extensive study the excited electronic structure of Cu_2 is relatively well known, however in practice few excited states have been investigated with rotational resolution or even assigned term symbols or dissociation limits. The spectroscopic methods that have been used to investigate the copper dimer until now have not possessed sufficient spectral selectivity, which has complicated the analysis of the often overlapping transitions. Resonant four-wave mixing is a non-linear absorption based spectroscopic method. In favorable cases, the two-color version (TC-RFWM) enables purely optical mass selective spectral measurements in a mixed molecular beam. Additionally, by labelling individual rotational levels in the common intermediate state the spectra are dramatically simplified. In this work, we report on the rotationally resolved characterization of low-lying electronic states of dicopper. Several term symbols have been assigned unambiguously. De-perturbation studies performed shed light on the complex electronic structure of the molecule. Furthermore, a new low-lying electronic state of Cu_2 is discovered and has important implications for the high-level theoretical structure calculations performed in parallel. In fact, the ab initio methods applied yield relative energies among the electronic levels that are almost quantitative and allow assignment of the newly observed state that is governed by spin-orbit interacting levels.

10 CFR 63.4 - Communications and records.

Code of Federal Regulations, 2013 CFR

2013-01-01

... NUCLEAR REGULATORY COMMISSION (CONTINUED) DISPOSAL OF HIGH-LEVEL RADIOACTIVE WASTES IN A GEOLOGIC..., Office of Nuclear Material Safety and Safeguards; or, (3) Where practicable, by electronic submission, for example, via Electronic Information Exchange, or CD-ROM. Electronic submissions must be made in a...

10 CFR 63.4 - Communications and records.

Code of Federal Regulations, 2012 CFR

2012-01-01

... NUCLEAR REGULATORY COMMISSION (CONTINUED) DISPOSAL OF HIGH-LEVEL RADIOACTIVE WASTES IN A GEOLOGIC..., Office of Nuclear Material Safety and Safeguards; or, (3) Where practicable, by electronic submission, for example, via Electronic Information Exchange, or CD-ROM. Electronic submissions must be made in a...

10 CFR 63.4 - Communications and records.

Code of Federal Regulations, 2014 CFR

2014-01-01

... NUCLEAR REGULATORY COMMISSION (CONTINUED) DISPOSAL OF HIGH-LEVEL RADIOACTIVE WASTES IN A GEOLOGIC..., Office of Nuclear Material Safety and Safeguards; or, (3) Where practicable, by electronic submission, for example, via Electronic Information Exchange, or CD-ROM. Electronic submissions must be made in a...

Photoemission of Energetic Hot Electrons Produced via Up-Conversion in Doped Quantum Dots.

PubMed

Dong, Yitong; Parobek, David; Rossi, Daniel; Son, Dong Hee

2016-11-09

The benefits of the hot electrons from semiconductor nanostructures in photocatalysis or photovoltaics result from their higher energy compared to that of the band-edge electrons facilitating the electron-transfer process. The production of high-energy hot electrons usually requires short-wavelength UV or intense multiphoton visible excitation. Here, we show that highly energetic hot electrons capable of above-threshold ionization are produced via exciton-to-hot-carrier up-conversion in Mn-doped quantum dots under weak band gap excitation (∼10 W/cm 2 ) achievable with the concentrated solar radiation. The energy of hot electrons is as high as ∼0.4 eV above the vacuum level, much greater than those observed in other semiconductor or plasmonic metal nanostructures, which are capable of performing energetically and kinetically more-challenging electron transfer. Furthermore, the prospect of generating solvated electron is unique for the energetic hot electrons from up-conversion, which can open a new door for long-range electron transfer beyond short-range interfacial electron transfer.

Clinical Assistant Diagnosis for Electronic Medical Record Based on Convolutional Neural Network.

PubMed

Yang, Zhongliang; Huang, Yongfeng; Jiang, Yiran; Sun, Yuxi; Zhang, Yu-Jin; Luo, Pengcheng

2018-04-20

Automatically extracting useful information from electronic medical records along with conducting disease diagnoses is a promising task for both clinical decision support(CDS) and neural language processing(NLP). Most of the existing systems are based on artificially constructed knowledge bases, and then auxiliary diagnosis is done by rule matching. In this study, we present a clinical intelligent decision approach based on Convolutional Neural Networks(CNN), which can automatically extract high-level semantic information of electronic medical records and then perform automatic diagnosis without artificial construction of rules or knowledge bases. We use collected 18,590 copies of the real-world clinical electronic medical records to train and test the proposed model. Experimental results show that the proposed model can achieve 98.67% accuracy and 96.02% recall, which strongly supports that using convolutional neural network to automatically learn high-level semantic features of electronic medical records and then conduct assist diagnosis is feasible and effective.

Discovery of the Electronic Spectra of Hps and Dps

NASA Astrophysics Data System (ADS)

Grimminger, Robert A.; Wei, Jie; Ellis, Blaine; Clouthier, Dennis J.; Wang, Zhong; Sears, Trevor

2009-06-01

The hitherto unknown electronic spectrum of the closed shell transient molecule HPS has been observed in the 685 - 846 nm region by laser-induced fluorescence and single vibronic level emission techniques. HPS (and DPS) were produced in a pulsed electric discharge jet using a precursor mixture of 3% PH_3 and 1% H_2S (or PD_3 and D_2S) in high pressure argon. The weak set of observed bands are assigned to the à ^1A^''-X˜ ^1A^' electronic transition on the basis of chemical evidence, isotope shifts and the correspondence of the vibrational frequencies, excitation energy, and band contours with predictions based on our own high level ab initio calculations. Theory predicts that the HPS bond angle decreases on electronic excitation, contrary to expectations based on Walsh diagrams.

High Current Density Scandate Cathodes for Future Vacuum Electronics Applications

DTIC Science & Technology

2008-05-30

of Technology HFSS Ansoft Corporation’s High Frequency Structure Simulator TWT Traveling Wave Tube - device for generating high levels of RF power ...cathodes are practical for high power RF sources. Typical thermi- onic cathodes consists of a tungsten matrix impregnated with a mixture of barium oxide...electron beam with the largest possible diameter, consistent with high gain, bandwidth, and efficiency at W- Band . The research concentrated on photonic

High Temperature Pt/Alumina Co-Fired System for 500 C Electronic Packaging Applications

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Neudeck, Philip G.; Spry, David J.; Beheim, Glenn M.; Hunter, Gary W.

2015-01-01

Gold thick-film metallization and 96 alumina substrate based prototype packaging system developed for 500C SiC electronics and sensors is briefly reviewed, the needs of improvement are discussed. A high temperature co-fired alumina material system based packaging system composed of 32-pin chip-level package and printed circuit board is discussed for packaging 500C SiC electronics and sensors.

Rarefied flow diagnostics using pulsed high-current electron beams

NASA Technical Reports Server (NTRS)

Wojcik, Radoslaw M.; Schilling, John H.; Erwin, Daniel A.

1990-01-01

The use of high-current short-pulse electron beams in low-density gas flow diagnostics is introduced. Efficient beam propagation is demonstrated for pressure up to 300 microns. The beams, generated by low-pressure pseudospark discharges in helium, provide extremely high fluorescence levels, allowing time-resolved visualization in high-background environments. The fluorescence signal frequency is species-dependent, allowing instantaneous visualization of mixing flowfields.

Fast wave direct electron heating in advanced inductive and ITER baseline scenario discharges in DIII-D

DOE PAGES

Pinsker, R. I.; Austin, M. E.; Diem, S. J.; ...

2014-02-12

Fast Wave (FW) heating and electron cyclotron heating (ECH) are used in the DIII-D tokamak to study plasmas with low applied torque and dominant electron heating characteristic of burning plasmas. FW heating via direct electron damping has reached the 2.5 MW level in high performance ELMy H-mode plasmas. In Advanced Inductive (AI) plasmas, core FW heating was found to be comparable to that of ECH, consistent with the excellent first-pass absorption of FWs predicted by ray-tracing models at high electron beta. FW heating at the ~2 MW level to ELMy H-mode discharges in the ITER Baseline Scenario (IBS) showed unexpectedlymore » strong absorption of FW power by injected neutral beam (NB) ions, indicated by significant enhancement of the D-D neutron rate, while the intended absorption on core electrons appeared rather weak. As a result, the AI and IBS discharges are compared in an effort to identify the causes of the different response to FWs.« less

Fast wave direct electron heating in advanced inductive and ITER baseline scenario discharges in DIII-D

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pinsker, R. I.; Jackson, G. L.; Luce, T. C.

Fast Wave (FW) heating and electron cyclotron heating (ECH) are used in the DIII-D tokamak to study plasmas with low applied torque and dominant electron heating characteristic of burning plasmas. FW heating via direct electron damping has reached the 2.5 MW level in high performance ELMy H-mode plasmas. In Advanced Inductive (AI) plasmas, core FW heating was found to be comparable to that of ECH, consistent with the excellent first-pass absorption of FWs predicted by ray-tracing models at high electron beta. FW heating at the ∼2 MW level to ELMy H-mode discharges in the ITER Baseline Scenario (IBS) showed unexpectedlymore » strong absorption of FW power by injected neutral beam (NB) ions, indicated by significant enhancement of the D-D neutron rate, while the intended absorption on core electrons appeared rather weak. The AI and IBS discharges are compared in an effort to identify the causes of the different response to FWs.« less

Fast wave direct electron heating in advanced inductive and ITER baseline scenario discharges in DIII-D

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pinsker, R. I.; Austin, M. E.; Diem, S. J.

Fast Wave (FW) heating and electron cyclotron heating (ECH) are used in the DIII-D tokamak to study plasmas with low applied torque and dominant electron heating characteristic of burning plasmas. FW heating via direct electron damping has reached the 2.5 MW level in high performance ELMy H-mode plasmas. In Advanced Inductive (AI) plasmas, core FW heating was found to be comparable to that of ECH, consistent with the excellent first-pass absorption of FWs predicted by ray-tracing models at high electron beta. FW heating at the ~2 MW level to ELMy H-mode discharges in the ITER Baseline Scenario (IBS) showed unexpectedlymore » strong absorption of FW power by injected neutral beam (NB) ions, indicated by significant enhancement of the D-D neutron rate, while the intended absorption on core electrons appeared rather weak. As a result, the AI and IBS discharges are compared in an effort to identify the causes of the different response to FWs.« less

DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

NASA Technical Reports Server (NTRS)

Li, S. B.; Choi, C. G.; Loo, R. Y.

1985-01-01

The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

Non-Fullerene Electron Acceptors for Use in Organic Solar Cells

PubMed Central

2015-01-01

Conspectus The active layer in a solution processed organic photovoltaic device comprises a light absorbing electron donor semiconductor, typically a polymer, and an electron accepting fullerene acceptor. Although there has been huge effort targeted to optimize the absorbing, energetic, and transport properties of the donor material, fullerenes remain as the exclusive electron acceptor in all high performance devices. Very recently, some new non-fullerene acceptors have been demonstrated to outperform fullerenes in comparative devices. This Account describes this progress, discussing molecular design considerations and the structure–property relationships that are emerging. The motivation to replace fullerene acceptors stems from their synthetic inflexibility, leading to constraints in manipulating frontier energy levels, as well as poor absorption in the solar spectrum range, and an inherent tendency to undergo postfabrication crystallization, resulting in device instability. New acceptors have to address these limitations, providing tunable absorption with high extinction coefficients, thus contributing to device photocurrent. The ability to vary and optimize the lowest unoccupied molecular orbital (LUMO) energy level for a specific donor polymer is also an important requirement, ensuring minimal energy loss on electron transfer and as high an internal voltage as possible. Initially perylene diimide acceptors were evaluated as promising acceptor materials. These electron deficient aromatic molecules can exhibit good electron transport, facilitated by close packed herringbone crystal motifs, and their energy levels can be synthetically tuned. The principal drawback of this class of materials, their tendency to crystallize on too large a length scale for an optimal heterojunction nanostructure, has been shown to be overcome through introduction of conformation twisting through steric effects. This has been primarily achieved by coupling two units together, forming dimers with a large intramolecular twist, which suppresses both nucleation and crystal growth. The generic design concept of rotationally symmetrical aromatic small molecules with extended π orbital delocalization, including polyaromatic hydrocarbons, phthalocyanines, etc., has also provided some excellent small molecule acceptors. In most cases, additional electron withdrawing functionality, such as imide or ester groups, can be incorporated to stabilize the LUMO and improve properties. New calamitic acceptors have been developed, where molecular orbital hybridization of electron rich and poor segments can be judiciously employed to precisely control energy levels. Conformation and intermolecular associations can be controlled by peripheral functionalization leading to optimization of crystallization length scales. In particular, the use of rhodanine end groups, coupled electronically through short bridged aromatic chains, has been a successful strategy, with promising device efficiencies attributed to high lying LUMO energy levels and subsequently large open circuit voltages. PMID:26505279

Observation of ultrahigh-energy electrons by resonance absorption of high-power microwaves in a pulsed plasma.

PubMed

Rajyaguru, C; Fuji, T; Ito, H; Yugami, N; Nishida, Y

2001-07-01

The interaction of high power microwave with collisionless unmagnetized plasma is studied. Investigation on the generation of superthermal electrons near the critical layer, by the resonance absorption phenomenon, is extended to very high microwave power levels (eta=E(2)(0)/4 pi n(e)kT(e) approximately 0.3). Here E0, n(e), and T(e) are the vacuum electric field, electron density, and electron temperature, respectively. Successive generation of electron bunches having maximum energy of about 2 keV, due to nonlinear wave breaking, is observed. The electron energy epsilon scales as a function of the incident microwave power P, according to epsilon proportional to P0.5 up to 250 kW. The two-dimensional spatial distribution of high energy electrons reveals that they are generated near the critical layer. However, the lower energy component is again produced in the subcritical density region indicating the possibility of other electron heating mechanisms.

Free electron laser-driven ultrafast rearrangement of the electronic structure in Ti

PubMed Central

Principi, E.; Giangrisostomi, E.; Cucini, R.; Bencivenga, F.; Battistoni, A.; Gessini, A.; Mincigrucci, R.; Saito, M.; Di Fonzo, S.; D'Amico, F.; Di Cicco, A.; Gunnella, R.; Filipponi, A.; Giglia, A.; Nannarone, S.; Masciovecchio, C.

2015-01-01

High-energy density extreme ultraviolet radiation delivered by the FERMI seeded free-electron laser has been used to create an exotic nonequilibrium state of matter in a titanium sample characterized by a highly excited electron subsystem at temperatures in excess of 10 eV and a cold solid-density ion lattice. The obtained transient state has been investigated through ultrafast absorption spectroscopy across the Ti M2,3-edge revealing a drastic rearrangement of the sample electronic structure around the Fermi level occurring on a time scale of about 100 fs. PMID:26798835

Design rules for charge-transport efficient host materials for phosphorescent organic light-emitting diodes.

PubMed

May, Falk; Al-Helwi, Mustapha; Baumeier, Björn; Kowalsky, Wolfgang; Fuchs, Evelyn; Lennartz, Christian; Andrienko, Denis

2012-08-22

The use of blue phosphorescent emitters in organic light-emitting diodes (OLEDs) imposes demanding requirements on a host material. Among these are large triplet energies, the alignment of levels with respect to the emitter, the ability to form and sustain amorphous order, material processability, and an adequate charge carrier mobility. A possible design strategy is to choose a π-conjugated core with a high triplet level and to fulfill the other requirements by using suitable substituents. Bulky substituents, however, induce large spatial separations between conjugated cores, can substantially reduce intermolecular electronic couplings, and decrease the charge mobility of the host. In this work we analyze charge transport in amorphous 2,8-bis(triphenylsilyl)dibenzofuran, an electron-transporting material synthesized to serve as a host in deep-blue OLEDs. We show that mesomeric effects delocalize the frontier orbitals over the substituents recovering strong electronic couplings and lowering reorganization energies, especially for electrons, while keeping energetic disorder small. Admittance spectroscopy measurements reveal that the material has indeed a high electron mobility and a small Poole-Frenkel slope, supporting our conclusions. By linking electronic structure, molecular packing, and mobility, we provide a pathway to the rational design of hosts with high charge mobilities.

Three electron beams from a laser-plasma wakefield accelerator and the energy apportioning question

PubMed Central

Yang, X.; Brunetti, E.; Gil, D. Reboredo; Welsh, G. H.; Li, F. Y.; Cipiccia, S.; Ersfeld, B.; Grant, D. W.; Grant, P. A.; Islam, M. R.; Tooley, M. P.; Vieux, G.; Wiggins, S. M.; Sheng, Z. M.; Jaroszynski, D. A.

2017-01-01

Laser-wakefield accelerators are compact devices capable of delivering ultra-short electron bunches with pC-level charge and MeV-GeV energy by exploiting the ultra-high electric fields arising from the interaction of intense laser pulses with plasma. We show experimentally and through numerical simulations that a high-energy electron beam is produced simultaneously with two stable lower-energy beams that are ejected in oblique and counter-propagating directions, typically carrying off 5–10% of the initial laser energy. A MeV, 10s nC oblique beam is ejected in a 30°–60° hollow cone, which is filled with more energetic electrons determined by the injection dynamics. A nC-level, 100s keV backward-directed beam is mainly produced at the leading edge of the plasma column. We discuss the apportioning of absorbed laser energy amongst the three beams. Knowledge of the distribution of laser energy and electron beam charge, which determine the overall efficiency, is important for various applications of laser-wakefield accelerators, including the development of staged high-energy accelerators. PMID:28281679

High-k shallow traps observed by charge pumping with varying discharging times

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen

2013-11-07

In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO{sub 2}/metal gate stacks. N{sub T}-V{sub high} {sub level} characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N{sub T} for extra contribution of I{sub cp} traps. N{sub T} is the number of traps, and I{sub cp} is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I{sub cp} traps at high voltage are inmore » fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti{sub x}N{sub 1−x} metal gate concentrations. Next, N{sub T}-V{sub high} {sub level} characteristic curves with different falling times (t{sub falling} {sub time}) and base level times (t{sub base} {sub level}) show that extra contribution of I{sub cp} traps decrease with an increase in t{sub falling} {sub time}. By fitting discharge formula for different t{sub falling} {sub time}, the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t{sub falling} {sub time}. This current cannot be measured by the charge pumping technique. Subsequent measurements of N{sub T} by charge pumping technique at t{sub base} {sub level} reveal a remainder of electrons trapped in high-k bulk shallow traps.« less

Progress Towards High-Sensitivity Arrays of Detectors of Sub-mm Radiation Using Superconducting Tunnel Junctions with Integrated Radio Frequency Single-Electron Transistors

NASA Technical Reports Server (NTRS)

Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Prober, D. E.; Rhee, K. W.; Schoelkopf, R. J.; Stahle, C. M.; Teufel, J.; Wollack, E. J.

2004-01-01

For high resolution imaging and spectroscopy in the FIR and submillimeter, space observatories will demand sensitive, fast, compact, low-power detector arrays with 104 pixels and sensitivity less than 10(exp -20) W/Hz(sup 0.5). Antenna-coupled superconducting tunnel junctions with integrated rf single-electron transistor readout amplifiers have the potential for achieving this high level of sensitivity, and can take advantage of an rf multiplexing technique. The device consists of an antenna to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure current through junctions contacting the absorber. We describe optimization of device parameters, and results on fabrication techniques for producing devices with high yield for detector arrays. We also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

Bay-annulated indigo (BAI) as an excellent electron accepting building block for high performance organic semiconductors

DOEpatents

Liu, Yi; He, Bo; Pun, Andrew

2015-11-24

A novel electron acceptor based on bay-annulated indigo (BAI) was synthesized and used for the preparation of a series of high performance donor-acceptor small molecules and polymers. The resulting materials possess low-lying LUMO energy level and small HOMO-LUMO gaps, while their films exhibited high crystallinity upon thermal treatment, commensurate with high field effect mobilities and ambipolar transfer characteristics.

Bay-annulated indigo (BAI) as an excellent electron accepting building block for high performance organic semiconductors

DOEpatents

Liu, Yi; He, Bo; Pun, Andrew

2016-04-19

A novel electron acceptor based on bay-annulated indigo (BAI) was synthesized and used for the preparation of a series of high performance donor-acceptor small molecules and polymers. The resulting materials possess low-lying LUMO energy level and small HOMO-LUMO gaps, while their films exhibited high crystallinity upon thermal treatment, commensurate with high field effect mobilities and ambipolar transfer characteristics.

Molecular implementation of molecular shift register memories

NASA Technical Reports Server (NTRS)

Beratan, David N. (Inventor); Onuchic, Jose N. (Inventor)

1991-01-01

An electronic shift register memory (20) at the molecular level is described. The memory elements are based on a chain of electron transfer molecules (22) and the information is shifted by photoinduced (26) electron transfer reactions. Thus, multi-step sequences of charge transfer reactions are used to move charge with high efficiency down a molecular chain. The device integrates compositions of the invention onto a VLSI substrate (36), providing an example of a molecular electronic device which may be fabricated. Three energy level schemes, molecular implementation of these schemes, optical excitation strategies, charge amplification strategies, and error correction strategies are described.

10 CFR 2.1011 - Management of electronic information.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 10 Energy 1 2010-01-01 2010-01-01 false Management of electronic information. 2.1011 Section 2... High-Level Radioactive Waste at a Geologic Repository § 2.1011 Management of electronic information. (a... Language)-compliant (ANSI IX3.135-1992/ISO 9075-1992) database management system (DBMS). Alternatively, the...

Analysis tool and methodology design for electronic vibration stress understanding and prediction

NASA Astrophysics Data System (ADS)

Hsieh, Sheng-Jen; Crane, Robert L.; Sathish, Shamachary

2005-03-01

The objectives of this research were to (1) understand the impact of vibration on electronic components under ultrasound excitation; (2) model the thermal profile presented under vibration stress; and (3) predict stress level given a thermal profile of an electronic component. Research tasks included: (1) retrofit of current ultrasonic/infrared nondestructive testing system with sensory devices for temperature readings; (2) design of software tool to process images acquired from the ultrasonic/infrared system; (3) developing hypotheses and conducting experiments; and (4) modeling and evaluation of electronic vibration stress levels using a neural network model. Results suggest that (1) an ultrasonic/infrared system can be used to mimic short burst high vibration loads for electronics components; (2) temperature readings for electronic components under vibration stress are consistent and repeatable; (3) as stress load and excitation time increase, temperature differences also increase; (4) components that are subjected to a relatively high pre-stress load, followed by a normal operating load, have a higher heating rate and lower cooling rate. These findings are based on grayscale changes in images captured during experimentation. Discriminating variables and a neural network model were designed to predict stress levels given temperature and/or grayscale readings. Preliminary results suggest a 15.3% error when using grayscale change rate and 12.8% error when using average heating rate within the neural network model. Data were obtained from a high stress point (the corner) of the chip.

Use of generalized population ratios to obtain Fe XV line intensities and linewidths at high electron densities

NASA Technical Reports Server (NTRS)

Kastner, S. O.; Bhatia, A. K.

1980-01-01

A generalized method for obtaining individual level population ratios is used to obtain relative intensities of extreme ultraviolet Fe XV emission lines in the range 284-500 A, which are density dependent for electron densities in the tokamak regime or higher. Four lines in particular are found to attain quite high intensities in the high-density limit. The same calculation provides inelastic contributions to linewidths. The method connects level populations and level widths through total probabilities t(ij), related to 'taboo' probabilities of Markov chain theory. The t(ij) are here evaluated for a real atomic system, being therefore of potential interest to random-walk theorists who have been limited to idealized systems characterized by simplified transition schemes.

Use of generalized population ratios to obtain Fe XV line intensities and linewidths at high electron densities

NASA Astrophysics Data System (ADS)

Kastner, S. O.; Bhatia, A. K.

1980-08-01

A generalized method for obtaining individual level population ratios is used to obtain relative intensities of extreme ultraviolet Fe XV emission lines in the range 284-500 A, which are density dependent for electron densities in the tokamak regime or higher. Four lines in particular are found to attain quite high intensities in the high-density limit. The same calculation provides inelastic contributions to linewidths. The method connects level populations and level widths through total probabilities t(ij), related to 'taboo' probabilities of Markov chain theory. The t(ij) are here evaluated for a real atomic system, being therefore of potential interest to random-walk theorists who have been limited to idealized systems characterized by simplified transition schemes.

Bridging Physics to Electronics--An Outreach Effort

ERIC Educational Resources Information Center

Tan, Kok-Kiong; Tang, Kok-Zuea; Ng, Vivian; Tay, Arthur; Yen, Shih-Cheng; Lee, Tong-Heng

2010-01-01

Physics has been an important part of the science curriculum in high schools. Without the appropriate high school physics background, it is difficult for a student subsequently to pursue an electronics engineering program at the university level since a good understanding of many concepts in physics is required to comprehend the material covered…

Landau-level spectroscopy of massive Dirac fermions in single-crystalline ZrTe5 thin flakes

NASA Astrophysics Data System (ADS)

Jiang, Y.; Dun, Z. L.; Zhou, H. D.; Lu, Z.; Chen, K.-W.; Moon, S.; Besara, T.; Siegrist, T. M.; Baumbach, R. E.; Smirnov, D.; Jiang, Z.

2017-07-01

We report infrared magnetospectroscopy studies on thin crystals of an emerging Dirac material ZrTe5 near the intrinsic limit. The observed structure of the Landau-level transitions and zero-field infrared absorption indicate a two-dimensional Dirac-like electronic structure, similar to that in graphene but with a small relativistic mass corresponding to a 9.4-meV energy gap. Measurements with circularly polarized light reveal a significant electron-hole asymmetry, which leads to splitting of the Landau-level transitions at high magnetic fields. Our model, based on the Bernevig-Hughes-Zhang effective Hamiltonian, quantitatively explains all observed transitions, determining the values of the Fermi velocity, Dirac mass (or gap), electron-hole asymmetry, and electron and hole g factors.

Computational Analysis of Hybrid Two-Photon Absorbers with Excited State Absorption

DTIC Science & Technology

2007-03-01

level. This hybrid arrangement creates a complex dynamical system in which the electron carrier concentration of every photo-activated energy level...spatiotemporal details of the electron population densities of each photo-activated energy level as well as the pulse shape in space and time. The main...experiments at low input energy . However, further additions must be done to the calculation of the optical path for high input energy . 1 15. SUBJECT TERM

An Electron-Deficient Building Block Based on the B←N Unit: An Electron Acceptor for All-Polymer Solar Cells.

PubMed

Dou, Chuandong; Long, Xiaojing; Ding, Zicheng; Xie, Zhiyuan; Liu, Jun; Wang, Lixiang

2016-01-22

A double B←N bridged bipyridyl (BNBP) is a novel electron-deficient building block for polymer electron acceptors in all-polymer solar cells. The B←N bridging units endow BNBP with fixed planar configuration and low-lying LUMO/HOMO energy levels. As a result, the polymer based on BNBP units (P-BNBP-T) exhibits high electron mobility, low-lying LUMO/HOMO energy levels, and strong absorbance in the visible region, which is desirable for polymer electron acceptors. Preliminary all-polymer solar cell (all-PSC) devices with P-BNBP-T as the electron acceptor and PTB7 as the electron donor exhibit a power conversion efficiency (PCE) of 3.38%, which is among the highest values of all-PSCs with PTB7 as the electron donor. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrical/Electronic Technology (Energy/Power). Industrial Arts, Senior High--Level II. North Dakota Senior High Industrial Arts Curriculum Guides.

ERIC Educational Resources Information Center

Lawrence, Allen; And Others

This course guide for an electrical/electronic technology course is one of four developed for the energy/power area in the North Dakota senior high industrial arts education program. (Eight other guides are available for two other areas of Industrial Arts--graphic communications and production.) Part 1 provides such introductory information as a…

A study of electrically active traps in AlGaN/GaN high electron mobility transistor

NASA Astrophysics Data System (ADS)

Yang, Jie; Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

2013-10-01

We have studied electron conduction mechanisms and the associated roles of the electrically active traps in the AlGaN layer of an AlGaN/GaN high electron mobility transistor structure. By fitting the temperature dependent I-V (Current-Voltage) curves to the Frenkel-Poole theory, we have identified two discrete trap energy levels. Multiple traces of I-V measurements and constant-current injection experiment all confirm that the main role of the traps in the AlGaN layer is to enhance the current flowing through the AlGaN barrier by trap-assisted electron conduction without causing electron trapping.

Upper limit on the inner radiation belt MeV electron intensity.

PubMed

Li, X; Selesnick, R S; Baker, D N; Jaynes, A N; Kanekal, S G; Schiller, Q; Blum, L; Fennell, J; Blake, J B

2015-02-01

No instruments in the inner radiation belt are immune from the unforgiving penetration of the highly energetic protons (tens of MeV to GeV). The inner belt proton flux level, however, is relatively stable; thus, for any given instrument, the proton contamination often leads to a certain background noise. Measurements from the Relativistic Electron and Proton Telescope integrated little experiment on board Colorado Student Space Weather Experiment CubeSat, in a low Earth orbit, clearly demonstrate that there exist sub-MeV electrons in the inner belt because their flux level is orders of magnitude higher than the background, while higher-energy electron (>1.6 MeV) measurements cannot be distinguished from the background. Detailed analysis of high-quality measurements from the Relativistic Electron and Proton Telescope on board Van Allen Probes, in a geo-transfer-like orbit, provides, for the first time, quantified upper limits on MeV electron fluxes in various energy ranges in the inner belt. These upper limits are rather different from flux levels in the AE8 and AE9 models, which were developed based on older data sources. For 1.7, 2.5, and 3.3 MeV electrons, the upper limits are about 1 order of magnitude lower than predicted model fluxes. The implication of this difference is profound in that unless there are extreme solar wind conditions, which have not happened yet since the launch of Van Allen Probes, significant enhancements of MeV electrons do not occur in the inner belt even though such enhancements are commonly seen in the outer belt. Quantified upper limit of MeV electrons in the inner beltActual MeV electron intensity likely much lower than the upper limitMore detailed understanding of relativistic electrons in the magnetosphere.

Upper limit on the inner radiation belt MeV electron intensity

PubMed Central

Li, X; Selesnick, RS; Baker, DN; Jaynes, AN; Kanekal, SG; Schiller, Q; Blum, L; Fennell, J; Blake, JB

2015-01-01

No instruments in the inner radiation belt are immune from the unforgiving penetration of the highly energetic protons (tens of MeV to GeV). The inner belt proton flux level, however, is relatively stable; thus, for any given instrument, the proton contamination often leads to a certain background noise. Measurements from the Relativistic Electron and Proton Telescope integrated little experiment on board Colorado Student Space Weather Experiment CubeSat, in a low Earth orbit, clearly demonstrate that there exist sub-MeV electrons in the inner belt because their flux level is orders of magnitude higher than the background, while higher-energy electron (>1.6 MeV) measurements cannot be distinguished from the background. Detailed analysis of high-quality measurements from the Relativistic Electron and Proton Telescope on board Van Allen Probes, in a geo-transfer-like orbit, provides, for the first time, quantified upper limits on MeV electron fluxes in various energy ranges in the inner belt. These upper limits are rather different from flux levels in the AE8 and AE9 models, which were developed based on older data sources. For 1.7, 2.5, and 3.3 MeV electrons, the upper limits are about 1 order of magnitude lower than predicted model fluxes. The implication of this difference is profound in that unless there are extreme solar wind conditions, which have not happened yet since the launch of Van Allen Probes, significant enhancements of MeV electrons do not occur in the inner belt even though such enhancements are commonly seen in the outer belt. Key Points Quantified upper limit of MeV electrons in the inner belt Actual MeV electron intensity likely much lower than the upper limit More detailed understanding of relativistic electrons in the magnetosphere PMID:26167446

Effects of high-energy particle showers on the embedded front-end electronics of an electromagnetic calorimeter for a future lepton collider

NASA Astrophysics Data System (ADS)

Adloff, C.; Francis, K.; Repond, J.; Smith, J.; Trojand, D.; Xia, L.; Baldolemar, E.; Li, J.; Park, S. T.; Sosebee, M.; White, A. P.; Yu, J.; Mikami, Y.; Watson, N. K.; Mavromanolakis, G.; Thomson, M. A.; Ward, D. R.; Yan, W.; Benchekroun, D.; Hoummada, A.; Khoulaki, Y.; Benyamna, M.; Cârloganu, C.; Fehr, F.; Gay, P.; Manen, S.; Royer, L.; Blazey, G. C.; Dyshkant, A.; Zutshi, V.; Hostachy, J.-Y.; Morin, L.; Cornett, U.; David, D.; Fabbri, R.; Falley, G.; Gadow, K.; Garutti, E.; Göttlicher, P.; Günter, C.; Karstensen, S.; Krivan, F.; Lucaci-Timoce, A.-I.; Lu, S.; Lutz, B.; Marchesini, I.; Meyer, N.; Morozov, S.; Morgunov, V.; Reinecke, M.; Sefkow, F.; Smirnov, P.; Terwort, M.; Vargas-Trevino, A.; Wattimena, N.; Wendt, O.; Feege, N.; Haller, J.; Richter, S.; Samson, J.; Eckert, P.; Kaplan, A.; Schultz-Coulon, H.-Ch.; Shen, W.; Stamen, R.; Tadday, A.; Bilki, B.; Norbeck, E.; Onel, Y.; Kawagoe, K.; Uozumi, S.; Dauncey, P. D.; Magnan, A.-M.; Bartsch, V.; Salvatore, F.; Laktineh, I.; Calvo Alamillo, E.; Fouz, M.-C.; Puerta-Pelayo, J.; Frey, A.; Kiesling, C.; Simon, F.; Bonis, J.; Bouquet, B.; Callier, S.; Cornebise, P.; Doublet, Ph.; Dulucq, F.; Faucci Giannelli, M.; Fleury, J.; Li, H.; Martin-Chassard, G.; Richard, F.; de La Taille, Ch.; Pöschl, R.; Raux, L.; Seguin-Moreau, N.; Wicek, F.; Anduze, M.; Boudry, V.; Brient, J.-C.; Jeans, D.; Mora de Freitas, P.; Musat, G.; Reinhard, M.; Ruan, M.; Videau, H.; Marcisovsky, M.; Sicho, P.; Vrba, V.; Zalesak, J.; Belhorma, B.; Ghazlane, H.; Calice Collaboration

2011-10-01

Application Specific Integrated Circuits, ASICs, similar to those envisaged for the readout electronics of the central calorimeters of detectors for a future lepton collider have been exposed to high-energy electromagnetic showers. A salient feature of these calorimeters is that the readout electronics will be embedded into the calorimeter layers. In this article it is shown that interactions of shower particles in the volume of the readout electronics do not alter the noise pattern of the ASICs. No signal at or above the MIP level has been observed during the exposure. The upper limit at the 95% confidence level on the frequency of fake signals is smaller than 1×10-5 for a noise threshold of about 60% of a MIP. For ASICs with similar design to those which were tested, it can thus be largely excluded that the embedding of the electronics into the calorimeter layers compromises the performance of the calorimeters.

High-Voltage Clock Driver for Photon-Counting CCD Characterization

NASA Technical Reports Server (NTRS)

Baker, Robert

2013-01-01

A document discusses the CCD97 from e2v technologies as it is being evaluated at Goddard Space Flight Center's Detector Characterization Laboratory (DCL) for possible use in ultra-low background noise space astronomy applications, such as Terrestrial Planet Finder Coronagraph (TPF-C). The CCD97 includes a photoncounting mode where the equivalent output noise is less than one electron. Use of this mode requires a clock signal at a voltage level greater than the level achievable by the existing CCD (charge-coupled-device) electronics. A high-voltage waveform generator has been developed in code 660/601 to support the CCD97 evaluation. The unit generates required clock waveforms at voltage levels from -20 to +50 V. It deals with standard and arbitrary waveforms and supports pixel rates from 50 to 500 kHz. The system is designed to interface with existing Leach CCD electronics.

Textured carbon on copper: A novel surface with extremely low secondary electron emission characteristics

NASA Technical Reports Server (NTRS)

Curren, A. N.; Jensen, K. A.

1985-01-01

Experimentally determined values of true secondary electron emission and relative values of reflected primary electron yield for a range of primary electron beam energies and beam impingement angles are presented for a series of novel textured carbon surfaces on copper substrates. (All copper surfaces used in this study were oxygen-free, high-conductivity grade). The purpose of this investigation is to provide information necessary to develop high-efficiency multistage depressed collectors (MDC's) for microwave amplifier traveling-wave tubes (TWT's) for communications and aircraft applications. To attain the highest TWT signal quality and overall efficiency, the MDC electrode surface must have low secondary electron emission characteristics. While copper is the material most commonly used for MDC electrodes, it exhibits relatively high levels of secondary electron emission unless its surface is treated for emission control. The textured carbon surface on copper substrate described in this report is a particularly promising candidate for the MDC electrode application. Samples of textured carbon surfaces on copper substrates typical of three different levels of treatment are prepared and tested for this study. The materials are tested at primary electron beam energies of 200 to 2000 eV and at direct (0 deg) to near-grazing (85 deg) beam impingement angles. True secondary electron emission and relative reflected primary electron yield characteristics of the textured surfaces are compared with each other and with those of untreated copper. All the textured carbon surfaces on copper substrate tested exhibited sharply lower secondary electron emission characteristics than those of an untreated copper surface.

Acute stress cardiomyopathy and deaths associated with electronic weapons.

PubMed

Cevik, Cihan; Otahbachi, Mohammad; Miller, Elizabeth; Bagdure, Satish; Nugent, Kenneth M

2009-03-06

Deaths associated with the use of electronic weapons almost always occur in young men involved in either civil disturbances or criminal activity. These situations are associated with high levels of circulating catecholamines and frequently associated with drug intoxication. The mechanism for these deaths is unclear. Clinical studies indicate that these high voltage electrical pulses do not cause cardiac arrhythmia. Acute stress cardiomyopathy provides an alternative explanation for deaths associated with electronic weapons and may provide a better explanation for the usual time course associated with taser deaths. Patients with acute stress cardiomyopathy usually have had an emotional or physical stress, have high circulating levels of catecholamines, present with an acute coronary syndrome but have normal coronary vessels without significant thrombus formation. They have unusual left ventricular dysfunction with so-called apical ballooning. This presentation has been attributed to the direct effects of catecholamines on myocardial cell function. Alternative explanations include vasospasm in the coronary microcirculation and/or acute thrombosis followed by rapid thrombolysis. Similar events could occur during the high stress situations associated with the use of electronic weapons. These events also likely explain restraint-related deaths which occur in independent of any use of electronic weapons. Forensic pathologists have the opportunity to provide important details about the pathogenesis of these deaths through histological studies and careful evaluation of coronary vessels.

Electronic gaming and psychosocial adjustment.

PubMed

Przybylski, Andrew K

2014-09-01

The rise of electronic games has driven both concerns and hopes regarding their potential to influence young people. Existing research identifies a series of isolated positive and negative effects, yet no research to date has examined the balance of these potential effects in a representative sample of children and adolescents. The objective of this study was to explore how time spent playing electronic games accounts for significant variation in positive and negative psychosocial adjustment using a representative cohort of children aged 10 to 15 years. A large sample of children and adolescents aged 10 to 15 years completed assessments of psychosocial adjustment and reported typical daily hours spent playing electronic games. Relations between different levels of engagement and indicators of positive and negative psychosocial adjustment were examined, controlling for participant age and gender and weighted for population representativeness. Low levels (<1 hour daily) as well as high levels (>3 hours daily) of game engagement was linked to key indicators of psychosocial adjustment. Low engagement was associated with higher life satisfaction and prosocial behavior and lower externalizing and internalizing problems, whereas the opposite was found for high levels of play. No effects were observed for moderate play levels when compared with non-players. The links between different levels of electronic game engagement and psychosocial adjustment were small (<1.6% of variance) yet statistically significant. Games consistently but not robustly associated with children's adjustment in both positive and negative ways, findings that inform policy-making as well as future avenues for research in the area. Copyright © 2014 by the American Academy of Pediatrics.

Feasibility Study for Electronic Fitness for Duty Medical Examination Reporting and Oversight.

DOT National Transportation Integrated Search

2016-11-01

This report examines the institutional and high-level technology aspects associated with potential mandated : electronic reporting of every commercial driver license (CDL) driver fitness-for-duty medical examination : performed by a medical examiner ...

Conceptual Design of a 50--100 MW Electron Beam Accelerator System for the National Hypersonic Wind Tunnel Program

DOE Office of Scientific and Technical Information (OSTI.GOV)

SCHNEIDER,LARRY X.

2000-06-01

The National Hypersonic Wind Tunnel program requires an unprecedented electron beam source capable of 1--2 MeV at a beam power level of 50--100 MW. Direct-current electron accelerator technology can readily generate high average power beams to approximately 5 MeV at output efficiencies greater than 90%. However, due to the nature of research and industrial applications, there has never been a requirement for a single module with an output power exceeding approximately 500 kW. Although a 50--100 MW module is a two-order extrapolation from demonstrated power levels, the scaling of accelerator components appears reasonable. This paper presents an evaluation of componentmore » and system issues involved in the design of a 50--100 MW electron beam accelerator system with precision beam transport into a high pressure flowing air environment.« less

Effect of Energy Alignment, Electron Mobility, and Film Morphology of Perylene Diimide Based Polymers as Electron Transport Layer on the Performance of Perovskite Solar Cells.

PubMed

Guo, Qiang; Xu, Yingxue; Xiao, Bo; Zhang, Bing; Zhou, Erjun; Wang, Fuzhi; Bai, Yiming; Hayat, Tasawar; Alsaedi, Ahmed; Tan, Zhan'ao

2017-03-29

For organic-inorganic perovskite solar cells (PerSCs), the electron transport layer (ETL) plays a crucial role in efficient electron extraction and transport for high performance PerSCs. Fullerene and its derivatives are commonly used as ETL for p-i-n structured PerSCs. However, these spherical small molecules are easy to aggregate with high annealing temperature and thus induce morphology stability problems. N-type conjugated polymers are promising candidates to overcome these problems due to the tunable energy levels, controllable aggregation behaviors, and good film formation abilities. Herein, a series of perylene diimide (PDI) based polymers (PX-PDIs), which contain different copolymeried units (X), including vinylene (V), thiophene (T), selenophene (Se), dibenzosilole (DBS), and cyclopentadithiophene (CPDT), are introduced as ETL for p-i-n structured PerSCs. The effect of energy alignment, electron mobility, and film morphology of these ETLs on the photovoltaic performance of the PerSCs are fully investigated. Among the PX-PDIs, PV-PDI demonstrates the deeper LUMO energy level, the highly delocalized LUMO electron density, and a better planar structure, making it the best electron transport material for PerSCs. The planar heterojunction PerSC with PV-PDI as ETL achieves a power conversion efficiency (PCE) of 10.14%, among the best values for non-fullerene based PerSCs.

Laboratory experiments on plasma contactors

NASA Technical Reports Server (NTRS)

Wilbur, Paul J.; Williams, John D.

1990-01-01

Experimental results describing the operation of hollow cathode plasma contactors collecting and emitting electrons from and to an ambient plasma at current levels of the order of one ampere are presented. The voltage drops induced between a contactor and an ambient plasma are shown to be a few tens of volts at such current levels. The development of a double sheath and the production of substantial numbers of ions by electrons streaming across it are associated with the electron collection process. The development of a complex potential structure including a high potential hill just downstream of the cathode orifice is shown to characterize typical contactor emitting electrons.

The Advanced Gamma-ray Imaging System (AGIS) - Camera Electronics Development

NASA Astrophysics Data System (ADS)

Tajima, Hiroyasu; Bechtol, K.; Buehler, R.; Buckley, J.; Byrum, K.; Drake, G.; Falcone, A.; Funk, S.; Hanna, D.; Horan, D.; Humensky, B.; Karlsson, N.; Kieda, D.; Konopelko, A.; Krawczynski, H.; Krennrich, F.; Mukherjee, R.; Ong, R.; Otte, N.; Quinn, J.; Schroedter, M.; Swordy, S.; Wagner, R.; Wakely, S.; Weinstein, A.; Williams, D.; Camera Working Group; AGIS Collaboration

2010-03-01

AGIS, a next-generation imaging atmospheric Cherenkov telescope (IACT) array, aims to achieve a sensitivity level of about one milliCrab for gamma-ray observations in the energy band of 50 GeV to 100 TeV. Achieving this level of performance will require on the order of 50 telescopes with perhaps as many as 1M total electronics channels. The larger scale of AGIS requires a very different approach from the currently operating IACTs, with lower-cost and lower-power electronics incorporated into camera modules designed for high reliability and easy maintenance. Here we present the concept and development status of the AGIS camera electronics.

The use of electronic health records in Spanish hospitals.

PubMed

Marca, Guillem; Perez, Angel; Blanco-Garcia, Martin German; Miravalles, Elena; Soley, Pere; Ortiga, Berta

The aims of this study were to describe the level of adoption of electronic health records in Spanish hospitals and to identify potential barriers and facilitators to this process. We used an observational cross-sectional design. The survey was conducted between September and December 2011, using an electronic questionnaire distributed through email. We obtained a 30% response rate from the 214 hospitals contacted, all belonging to the Spanish National Health Service. The level of adoption of electronic health records in Spanish hospitals was found to be high: 39.1% of hospitals surveyed had a comprehensive EHR system while a basic system was functioning in 32.8% of the cases. However, in 2011 one third of the hospitals did not have a basic electronic health record system, although some have since implemented electronic functionalities, particularly those related to clinical documentation and patient administration. Respondents cited the acquisition and implementation costs as the main barriers to implementation. Facilitators for EHR implementation were: the possibility to hire technical support, both during and post implementation; security certification warranty; and objective third-party evaluations of EHR products. In conclusion, the number of hospitals that have electronic health records is in general high, being relatively higher in medium-sized hospitals.

Critical Factors That Influence the Success of Cultivating Seed Teachers in Environmental Education

ERIC Educational Resources Information Center

Hsueh, Sung-Lin; Su, Fu-Long

2016-01-01

Taiwan is a densely populated industrialized country with high-polluting industries. In particular, petrochemical, steel, thermal power, and electronics plants consume a high level of energy. Furthermore, vehicle exhaust emissions are a major contributor to pollution. Collectively, these problems have resulted in high levels of greenhouse gas…

Does menaquinone participate in brain astrocyte electron transport?

PubMed

Lovern, Douglas; Marbois, Beth

2013-10-01

Quinone compounds act as membrane resident carriers of electrons between components of the electron transport chain in the periplasmic space of prokaryotes and in the mitochondria of eukaryotes. Vitamin K is a quinone compound in the human body in a storage form as menaquinone (MK); distribution includes regulated amounts in mitochondrial membranes. The human brain, which has low amounts of typical vitamin K dependent function (e.g., gamma carboxylase) has relatively high levels of MK, and different regions of brain have different amounts. Coenzyme Q (Q), is a quinone synthesized de novo, and the levels of synthesis decline with age. The levels of MK are dependent on dietary intake and generally increase with age. MK has a characterized role in the transfer of electrons to fumarate in prokaryotes. A newly recognized fumarate cycle has been identified in brain astrocytes. The MK precursor menadione has been shown to donate electrons directly to mitochondrial complex III. Vitamin K compounds function in the electron transport chain of human brain astrocytes. Copyright © 2013 Elsevier Ltd. All rights reserved.

In Data We Trust? Comparison of Electronic Versus Manual Abstraction of Antimicrobial Prescribing Quality Metrics for Hospitalized Veterans With Pneumonia.

PubMed

Jones, Barbara E; Haroldsen, Candace; Madaras-Kelly, Karl; Goetz, Matthew B; Ying, Jian; Sauer, Brian; Jones, Makoto M; Leecaster, Molly; Greene, Tom; Fridkin, Scott K; Neuhauser, Melinda M; Samore, Matthew H

2018-07-01

Electronic health records provide the opportunity to assess system-wide quality measures. Veterans Affairs Pharmacy Benefits Management Center for Medication Safety uses medication use evaluation (MUE) through manual review of the electronic health records. To compare an electronic MUE approach versus human/manual review for extraction of antibiotic use (choice and duration) and severity metrics. Retrospective. Hospitalizations for uncomplicated pneumonia occurring during 2013 at 30 Veterans Affairs facilities. We compared summary statistics, individual hospitalization-level agreement, facility-level consistency, and patterns of variation between electronic and manual MUE for initial severity, antibiotic choice, daily clinical stability, and antibiotic duration. Among 2004 hospitalizations, electronic and manual abstraction methods showed high individual hospitalization-level agreement for initial severity measures (agreement=86%-98%, κ=0.5-0.82), antibiotic choice (agreement=89%-100%, κ=0.70-0.94), and facility-level consistency for empiric antibiotic choice (anti-MRSA r=0.97, P<0.001; antipseudomonal r=0.95, P<0.001) and therapy duration (r=0.77, P<0.001) but lower facility-level consistency for days to clinical stability (r=0.52, P=0.006) or excessive duration of therapy (r=0.55, P=0.005). Both methods identified widespread facility-level variation in antibiotic choice, but we found additional variation in manual estimation of excessive antibiotic duration and initial illness severity. Electronic and manual MUE agreed well for illness severity, antibiotic choice, and duration of therapy in pneumonia at both the individual and facility levels. Manual MUE showed additional reviewer-level variation in estimation of initial illness severity and excessive antibiotic use. Electronic MUE allows for reliable, scalable tracking of national patterns of antimicrobial use, enabling the examination of system-wide interventions to improve quality.

Electronic and structural ground state of heavy alkali metals at high pressure

DOE PAGES

Fabbris, G.; Lim, J.; Veiga, L. S. I.; ...

2015-02-17

Here, alkali metals display unexpected properties at high pressure, including emergence of low symmetry crystal structures, that appear to occur due to enhanced electronic correlations among the otherwise nearly-free conduction electrons. We investigate the high pressure electronic and structural ground state of K, Rb, and Cs using x-ray absorption spectroscopy and x-ray diffraction measurements together with ab initio theoretical calculations. The sequence of phase transitions under pressure observed at low temperature is similar in all three heavy alkalis except for the absence of the oC84 phase in Cs. Both the experimental and theoretical results point to pressure-enhanced localization of themore » valence electrons characterized by pseudo-gap formation near the Fermi level and strong spd hybridization. Although the crystal structures predicted to host magnetic order in K are not observed, the localization process appears to drive these alkalis closer to a strongly correlated electron state.« less

Dosimetry of Al2O3 optically stimulated luminescent dosimeter at high energy photons and electrons

NASA Astrophysics Data System (ADS)

Yusof, M. F. Mohd; Joohari, N. A.; Abdullah, R.; Shukor, N. S. Abd; Kadir, A. B. Abd; Isa, N. Mohd

2018-01-01

The linearity of Al2O3 OSL dosimeters (OSLD) were evaluated for dosimetry works in clinical photons and electrons. The measurements were made at a reference depth of Zref according to IAEA TRS 398:2000 codes of practice at 6 and 10 MV photons and 6 and 9 MeV electrons. The measured dose was compared to the thermoluminescence dosimeters (TLD) and ionization chamber commonly used for dosimetry works for higher energy photons and electrons. The results showed that the measured dose in OSL dosimeters were in good agreement with the reported by the ionization chamber in both high energy photons and electrons. A reproducibility test also reported excellent consistency of readings with the OSL at similar energy levels. The overall results confirmed the suitability of OSL dosimeters for dosimetry works involving high energy photons and electrons in radiotherapy.

Backside illuminated CMOS-TDI line scan sensor for space applications

NASA Astrophysics Data System (ADS)

Cohen, Omer; Ofer, Oren; Abramovich, Gil; Ben-Ari, Nimrod; Gershon, Gal; Brumer, Maya; Shay, Adi; Shamay, Yaron

2018-05-01

A multi-spectral backside illuminated Time Delayed Integration Radiation Hardened line scan sensor utilizing CMOS technology was designed for continuous scanning Low Earth Orbit small satellite applications. The sensor comprises a single silicon chip with 4 independent arrays of pixels where each array is arranged in 2600 columns with 64 TDI levels. A multispectral optical filter whose spectral responses per array are adjustable per system requirement is assembled at the package level. A custom 4T Pixel design provides the required readout speed, low-noise, very low dark current, and high conversion gains. A 2-phase internally controlled exposure mechanism improves the sensor's dynamic MTF. The sensor high level of integration includes on-chip 12 bit per pixel analog to digital converters, on-chip controller, and CMOS compatible voltage levels. Thus, the power consumption and the weight of the supporting electronics are reduced, and a simple electrical interface is provided. An adjustable gain provides a Full Well Capacity ranging from 150,000 electrons up to 500,000 electrons per column and an overall readout noise per column of less than 120 electrons. The imager supports line rates ranging from 50 to 10,000 lines/sec, with power consumption of less than 0.5W per array. Thus, the sensor is characterized by a high pixel rate, a high dynamic range and a very low power. To meet a Latch-up free requirement RadHard architecture and design rules were utilized. In this paper recent electrical and electro-optical measurements of the sensor's Flight Models will be presented for the first time.

SABRE: a bio-inspired fault-tolerant electronic architecture.

PubMed

Bremner, P; Liu, Y; Samie, M; Dragffy, G; Pipe, A G; Tempesti, G; Timmis, J; Tyrrell, A M

2013-03-01

As electronic devices become increasingly complex, ensuring their reliable, fault-free operation is becoming correspondingly more challenging. It can be observed that, in spite of their complexity, biological systems are highly reliable and fault tolerant. Hence, we are motivated to take inspiration for biological systems in the design of electronic ones. In SABRE (self-healing cellular architectures for biologically inspired highly reliable electronic systems), we have designed a bio-inspired fault-tolerant hierarchical architecture for this purpose. As in biology, the foundation for the whole system is cellular in nature, with each cell able to detect faults in its operation and trigger intra-cellular or extra-cellular repair as required. At the next level in the hierarchy, arrays of cells are configured and controlled as function units in a transport triggered architecture (TTA), which is able to perform partial-dynamic reconfiguration to rectify problems that cannot be solved at the cellular level. Each TTA is, in turn, part of a larger multi-processor system which employs coarser grain reconfiguration to tolerate faults that cause a processor to fail. In this paper, we describe the details of operation of each layer of the SABRE hierarchy, and how these layers interact to provide a high systemic level of fault tolerance.

Quantum oscillations from the reconstructed Fermi surface in electron-doped cuprate superconductors

NASA Astrophysics Data System (ADS)

Higgins, J. S.; Chan, M. K.; Sarkar, Tarapada; McDonald, R. D.; Greene, R. L.; Butch, N. P.

2018-04-01

We have studied the electronic structure of electron-doped cuprate superconductors via measurements of high-field Shubnikov–de Haas oscillations in thin films. In optimally doped Pr2‑x Ce x CuO4±δ and La2‑x Ce x CuO4±δ , quantum oscillations indicate the presence of a small Fermi surface, demonstrating that electronic reconstruction is a general feature of the electron-doped cuprates, despite the location of the superconducting dome at very different doping levels. Negative high-field magnetoresistance is correlated with an anomalous low-temperature change in scattering that modifies the amplitude of quantum oscillations. This behavior is consistent with effects attributed to spin fluctuations.

Using Adobe Flash Animations of Electron Transport Chain to Teach and Learn Biochemistry

ERIC Educational Resources Information Center

Teplá, Milada; Klímová, Helena

2015-01-01

Teaching the subject of the electron transport chain is one of the most challenging aspects of the chemistry curriculum at the high school level. This article presents an educational program called "Electron Transport Chain" which consists of 14 visual animations including a biochemistry quiz. The program was created in the Adobe Flash…

Progress Towards High-Sensitivity Arrays of Detectors of Sub-mm Radiation using Superconducting Tunnel Junctions with Radio-Frequency Single-Electron Transistors

NASA Technical Reports Server (NTRS)

Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Stahle, C. M.; Wollack, E. J.; Schoelkopf, R. J.; Krebs, Carolyn (Technical Monitor)

2002-01-01

The science drivers for the SPIRIT/SPECS missions demand sensitive, fast, compact, low-power, large-format detector arrays for high resolution imaging and spectroscopy in the far infrared and submillimeter. Detector arrays with 10,000 pixels and sensitivity less than 10(exp 20)-20 W/Hz(exp 20)0.5 are needed. Antenna-coupled superconducting tunnel junction detectors with integrated rf single-electron transistor readout amplifiers have the potential for achieving this high level of sensitivity, and can take advantage of an rf multiplexing technique when forming arrays. The device consists of an antenna structure to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure currents through tunnel junction contacts to the absorber volume. We will describe optimization of device parameters, and recent results on fabrication techniques for producing devices with high yield for detector arrays. We will also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

Plasma contactor research, 1990

NASA Technical Reports Server (NTRS)

Williams, John D.; Wilbur, Paul J.

1991-01-01

Emissive and Langmuir probes were used to measure plasma potential profiles, plasma densities, electron energy distributions, and plasma noise levels near a hollow cathode-based plasma contactor emitting electrons. The effects of electron emission current (100 to 1500 mA) and contactor flowrate (2 to 10 sccm (Xenon)) on these data are examined. Retarding potential analyzer (RPA) measurements showing that high energy ions generally stream from a contactor along with the electrons being emitted are also presented, and a mechanism by which this occurs is postulated. This mechanism, which involves a high rate of ionization induced between electrons and atoms flowing together from the hollow cathode orifice, results in a region of high positive space charge and high positive potential. Langmuir and RPA probe data suggests that both electrons and ions expand spherically from this potential hill region. In addition to experimental observations, a simple one-dimensional model which describes the electron emission process and predicts the phenomena just mentioned is presented and is shown to agree qualitatively with these observations. Experimental results of the first stage of bilateral cooperation with the Italian Institute of Interplanetary Space Physics (IFSI CNR) are presented. Sharp, well-defined double layers were observed downstream of a contactor collecting electrons from an ambient plasma created in the IFSI Facility. The voltage drop across these double layers was observed to increase with the current drawn from the ambient plasma. This observation, which was not as clear in previous IFSI tests conducted at higher neutral pressures, is in agreement with previous experimental observations made at both Colorado State University and NASA Lewis Research Center. Greater double layer voltage drops, multiple double layers, and higher noise levels in the region near the double layers were also observed when a magnetic field was imposed and oriented perpendicular to the line joining the contactor and simulator.

Do Students Using Electronic Books Display Different Reading Comprehension and Motivation Levels than Students Using Traditional Print Books?

ERIC Educational Resources Information Center

Wells, Casey L.

2012-01-01

The effect of electronic books on the reading comprehension of middle and high school students was examined using an experimental posttest-only control-group design. A convenience sample of 140 randomly assigned middle and high school English students at an independent school in eastern North Carolina participated. Half of the students used…

Low Voltage Low Light Imager and Photodetector

NASA Technical Reports Server (NTRS)

Nikzad, Shouleh (Inventor); Martin, Chris (Inventor); Hoenk, Michael E. (Inventor)

2013-01-01

Highly efficient, low energy, low light level imagers and photodetectors are provided. In particular, a novel class of Della-Doped Electron Bombarded Array (DDEBA) photodetectors that will reduce the size, mass, power, complexity, and cost of conventional imaging systems while improving performance by using a thinned imager that is capable of detecting low-energy electrons, has high gain, and is of low noise.

Gigahertz single-electron pumping in silicon with an accuracy better than 9.2 parts in 10{sup 7}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamahata, Gento, E-mail: yamahata.gento@lab.ntt.co.jp; Karasawa, Takeshi; Fujiwara, Akira

2016-07-04

High-speed and high-accuracy pumping of a single electron is crucial for realizing an accurate current source, which is a promising candidate for a quantum current standard. Here, using a high-accuracy measurement system traceable to primary standards, we evaluate the accuracy of a Si tunable-barrier single-electron pump driven by a single sinusoidal signal. The pump operates at frequencies up to 6.5 GHz, producing a current of more than 1 nA. At 1 GHz, the current plateau with a level of about 160 pA is found to be accurate to better than 0.92 ppm (parts per million), which is a record value for 1-GHz operation. At 2 GHz,more » the current plateau offset from 1ef (∼320 pA) by 20 ppm is observed. The current quantization accuracy is improved by applying a magnetic field of 14 T, and we observe a current level of 1ef with an accuracy of a few ppm. The presented gigahertz single-electron pumping with a high accuracy is an important step towards a metrological current standard.« less

Upper limit on the inner radiation belt MeV electron intensity

NASA Astrophysics Data System (ADS)

Li, X.; Selesnick, R. S.; Baker, D. N.; Jaynes, A. N.; Kanekal, S. G.; Schiller, Q.; Blum, L.; Fennell, J.; Blake, J. B.

2015-02-01

No instruments in the inner radiation belt are immune from the unforgiving penetration of the highly energetic protons (tens of MeV to GeV). The inner belt proton flux level, however, is relatively stable; thus, for any given instrument, the proton contamination often leads to a certain background noise. Measurements from the Relativistic Electron and Proton Telescope integrated little experiment on board Colorado Student Space Weather Experiment CubeSat, in a low Earth orbit, clearly demonstrate that there exist sub-MeV electrons in the inner belt because their flux level is orders of magnitude higher than the background, while higher-energy electron (>1.6 MeV) measurements cannot be distinguished from the background. Detailed analysis of high-quality measurements from the Relativistic Electron and Proton Telescope on board Van Allen Probes, in a geo-transfer-like orbit, provides, for the first time, quantified upper limits on MeV electron fluxes in various energy ranges in the inner belt. These upper limits are rather different from flux levels in the AE8 and AE9 models, which were developed based on older data sources. For 1.7, 2.5, and 3.3 MeV electrons, the upper limits are about 1 order of magnitude lower than predicted model fluxes. The implication of this difference is profound in that unless there are extreme solar wind conditions, which have not happened yet since the launch of Van Allen Probes, significant enhancements of MeV electrons do not occur in the inner belt even though such enhancements are commonly seen in the outer belt.

Trirotron: triode rotating beam radio frequency amplifier

DOEpatents

Lebacqz, Jean V.

1980-01-01

High efficiency amplification of radio frequencies to very high power levels including: establishing a cylindrical cloud of electrons; establishing an electrical field surrounding and coaxial with the electron cloud to bias the electrons to remain in the cloud; establishing a rotating electrical field that surrounds and is coaxial with the steady field, the circular path of the rotating field being one wavelength long, whereby the peak of one phase of the rotating field is used to accelerate electrons in a beam through the bias field in synchronism with the peak of the rotating field so that there is a beam of electrons continuously extracted from the cloud and rotating with the peak; establishing a steady electrical field that surrounds and is coaxial with the rotating field for high-energy radial acceleration of the rotating beam of electrons; and resonating the rotating beam of electrons within a space surrounding the second field, the space being selected to have a phase velocity equal to that of the rotating field to thereby produce a high-power output at the frequency of the rotating field.

Anomalous property of Ag(BO2)2 hyperhalogen: does spin-orbit coupling matter?

PubMed

Chen, Hui; Kong, Xiang-Yu; Zheng, Weijun; Yao, Jiannian; Kandalam, Anil K; Jena, Puru

2013-10-07

Hyperhalogens were recently identified as a new class of highly electronagative species which are composed of metals and superhalogens. In this work, high-level theoretical calculations and photoelectron spectroscopy experiments are systematically conducted to investigate a series of coinage-metal-containing hyperhalogen anions, Cu(BO(2))(2)(-), Ag(BO(2))(2)(-), and Au(BO(2))(2)(-). The vertical electron detachment energy (VDE) of Ag(BO(2))(2)(-) is anomalously higher than those of Au(BO(2))(2)(-) and Cu(BO(2))(2)(-). In quantitative agreement with the experiment, high-level ab initio calculations reveal that spin-orbit coupling (SOC) lowers the VDE of Au(BO(2))(2)(-) significantly. The sizable magnitude of about 0.5 eV of SOC effect on the VDE of Au(BO(2))(2)(-) demonstrates that SOC plays an important role in the electronic structure of gold hyperhalogens. This study represents a new paradigm for relativistic electronic structure calculations for the one-electron-removal process of ionic Au(I)L(2) complexes, which is characterized by a substantial SOC effect. Copyright © 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim.

Origin of High Electronic Quality in Solar Cell Absorber CH3NH3PbI3

NASA Astrophysics Data System (ADS)

Yin, Wanjian; Shi, Tingting; Wei, Suhua; Yan, Yanfa

Thin-film solar cells based on CH3NH3PbI3 halide perovskites have recently shown remarkable performance. First-principle calculations and molecular dynamic simulations show that the structure of pristine CH3NH3PbI3 is much more disordered than the inorganic archetypal thin-film semiconductor CdTe. However, the structural disorders from thermal fluctuation, point defects and grain boundaries introduce rare deep defect states within the bandgaps; therefore, the material has high electronic quality. We have further shown that this unusually high electronic quality is attributed to the unique electronic structures of halide perovskite: the strong coupling between cation lone-pair Pb s orbitals and anion p orbitals and the large atomic size of constitute cation atoms. We further found that although CH3NH3PbI3 GBs do not introduce a deep gap state, the defect level close to the VBM can still act as a shallow hole trap state. Cl and O can spontaneously segregate into GBs and passivate those defect levels and deactivate the trap state.

James Webb Space Telescope Mid Infra-Red Instrument Pulse-Tube Cryocooler Electronics

NASA Technical Reports Server (NTRS)

Harvey, D.; Flowers, T.; Liu, N.; Moore, K.; Tran, D.; Valenzuela, P.; Franklin, B.; Michaels, D.

2013-01-01

The latest generation of long life, space pulse-tube cryocoolers require electronics capable of controlling self-induced vibration down to a fraction of a newton and coldhead temperature with high accuracy down to a few kelvin. Other functions include engineering diagnostics, heater and valve control, telemetry and safety protection of the cryocooler subsystem against extreme environments and operational anomalies. The electronics are designed to survive the thermal, vibration, shock and radiation environment of launch and orbit, while providing a design life in excess of 10 years on-orbit. A number of our current generation high reliability radiation-hardened electronics units are in various stages of integration on several space flight payloads. This paper describes the features and performance of our latest flight electronics designed for the pulse-tube cryocooler that is the pre-cooler for a closed cycle Joule-Thomson cooler providing 6K cooling for the James Webb Space Telescope (JWST) Mid Infra-Red Instrument (MIRI). The electronics is capable of highly accurate temperature control over the temperature range from 4K to 15K. Self-induced vibration is controlled to low levels on all harmonics up to the 16th. A unique active power filter controls peak-to-peak reflected ripple current on the primary power bus to a very low level. The 9 kg unit is capable of delivering 360W continuous power to NGAS's 3-stage pulse-tube High-Capacity Cryocooler (HCC).

High-Performance, Radiation-Hardened Electronics for Space Environments

NASA Technical Reports Server (NTRS)

Keys, Andrew S.; Watson, Michael D.; Frazier, Donald O.; Adams, James H.; Johnson, Michael A.; Kolawa, Elizabeth A.

2007-01-01

The Radiation Hardened Electronics for Space Environments (RHESE) project endeavors to advance the current state-of-the-art in high-performance, radiation-hardened electronics and processors, ensuring successful performance of space systems required to operate within extreme radiation and temperature environments. Because RHESE is a project within the Exploration Technology Development Program (ETDP), RHESE's primary customers will be the human and robotic missions being developed by NASA's Exploration Systems Mission Directorate (ESMD) in partial fulfillment of the Vision for Space Exploration. Benefits are also anticipated for NASA's science missions to planetary and deep-space destinations. As a technology development effort, RHESE provides a broad-scoped, full spectrum of approaches to environmentally harden space electronics, including new materials, advanced design processes, reconfigurable hardware techniques, and software modeling of the radiation environment. The RHESE sub-project tasks are: SelfReconfigurable Electronics for Extreme Environments, Radiation Effects Predictive Modeling, Radiation Hardened Memory, Single Event Effects (SEE) Immune Reconfigurable Field Programmable Gate Array (FPGA) (SIRF), Radiation Hardening by Software, Radiation Hardened High Performance Processors (HPP), Reconfigurable Computing, Low Temperature Tolerant MEMS by Design, and Silicon-Germanium (SiGe) Integrated Electronics for Extreme Environments. These nine sub-project tasks are managed by technical leads as located across five different NASA field centers, including Ames Research Center, Goddard Space Flight Center, the Jet Propulsion Laboratory, Langley Research Center, and Marshall Space Flight Center. The overall RHESE integrated project management responsibility resides with NASA's Marshall Space Flight Center (MSFC). Initial technology development emphasis within RHESE focuses on the hardening of Field Programmable Gate Arrays (FPGA)s and Field Programmable Analog Arrays (FPAA)s for use in reconfigurable architectures. As these component/chip level technologies mature, the RHESE project emphasis shifts to focus on efforts encompassing total processor hardening techniques and board-level electronic reconfiguration techniques featuring spare and interface modularity. This phased approach to distributing emphasis between technology developments provides hardened FPGA/FPAAs for early mission infusion, then migrates to hardened, board-level, high speed processors with associated memory elements and high density storage for the longer duration missions encountered for Lunar Outpost and Mars Exploration occurring later in the Constellation schedule.

The role of electro-explosion alloying with titanium diboride and treatment with pulsed electron beam in the surface modification of VT6 alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Konovalov, Sergey, E-mail: konovserg@gmail.com; Gromov, Victor, E-mail: gromov@physics.sibsiu.ru; Kobzareva, Tatyana

The paper presents the results of the investigation of VT6 titanium alloy subjected to electro-explosion alloying with TiB{sub 2} and irradiation with pulsed electron beam. It was established that electro-explosion alloying resulted in a high level of roughness of the surface layer with high adhesion of the modified layer and matrix. Further irradiation of the material with electron beam resulted in the smoothing of the surface of alloying and formation of a porous structure with various scale levels in the surface layer. It was also established that the energetic exposure causes the formation of a gradient structure with a changingmore » elemental composition along the direction from the surface of alloying.« less

The graphene-gold interface and its implications for nanoelectronics.

PubMed

Sundaram, Ravi S; Steiner, Mathias; Chiu, Hsin-Ying; Engel, Michael; Bol, Ageeth A; Krupke, Ralph; Burghard, Marko; Kern, Klaus; Avouris, Phaedon

2011-09-14

We combine optical microspectroscopy and electronic measurements to study how gold deposition affects the physical properties of graphene. We find that the electronic structure, the electron-phonon coupling, and the doping level in gold-plated graphene are largely preserved. The transfer lengths for electrons and holes at the graphene-gold contact have values as high as 1.6 μm. However, the interfacial coupling of graphene and gold causes local temperature drops of up to 500 K in operating electronic devices.

Radiation Tolerant Electronics and Digital Processing for the Phase-I Trigger Readout Upgrade of the ATLAS Liquid Argon Calorimeters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Milic, A.

The high luminosities of L > 10{sup 34} cm{sup -2}s{sup -1} at the Large Hadron Collider (LHC) at CERN produce an intense radiation environment that the detectors and their electronics must withstand. The ATLAS detector is a multi-purpose apparatus constructed to explore the new particle physics regime opened by the LHC. Of the many decay particles observed by the ATLAS detector, the energy of the created electrons and photons is measured by a sampling calorimeter technique that uses Liquid Argon (LAr) as its active medium. The front end (FE) electronic readout of the ATLAS LAr calorimeter located on the detectormore » itself consists of a combined analog and digital processing system. In order to exploit the higher luminosity while keeping the same trigger bandwidth of 100 kHz, higher transverse granularity, higher resolution and longitudinal shower shape information will be provided from the LAr calorimeter to the Level-l trigger processors. New trigger readout electronics have been designed for this purpose, which will withstand the radiation dose levels expected for an integrated luminosity of 3000 fb{sup -1} during the high luminosity LHC (HL-LHC), which is well above the original LHC design qualifications. (authors)« less

Band offset and electron affinity of MBE-grown SnSe2

NASA Astrophysics Data System (ADS)

Zhang, Qin; Li, Mingda Oscar; Lochocki, Edward B.; Vishwanath, Suresh; Liu, Xinyu; Yan, Rusen; Lien, Huai-Hsun; Dobrowolska, Malgorzata; Furdyna, Jacek; Shen, Kyle M.; Cheng, Guangjun; Hight Walker, Angela R.; Gundlach, David J.; Xing, Huili G.; Nguyen, N. V.

2018-01-01

SnSe2 is currently considered a potential two-dimensional material that can form a near-broken gap heterojunction in a tunnel field-effect transistor due to its large electron affinity which is experimentally confirmed in this letter. With the results from internal photoemission and angle-resolved photoemission spectroscopy performed on Al/Al2O3/SnSe2/GaAs and SnSe2/GaAs test structures where SnSe2 is grown on GaAs by molecular beam epitaxy, we ascertain a (5.2 ± 0.1) eV electron affinity of SnSe2. The band offset from the SnSe2 Fermi level to the Al2O3 conduction band minimum is found to be (3.3 ± 0.05) eV and SnSe2 is seen to have a high level of intrinsic electron (n-type) doping with the Fermi level positioned at about 0.2 eV above its conduction band minimum. It is concluded that the electron affinity of SnSe2 is larger than that of most semiconductors and can be combined with other appropriate semiconductors to form near broken-gap heterojunctions for the tunnel field-effect transistor that can potentially achieve high on-currents.

Nanoclusters as a new family of high temperature superconductors (Conference Presentation)

NASA Astrophysics Data System (ADS)

Halder, Avik; Kresin, Vitaly V.

2017-03-01

Electrons in metal clusters organize into quantum shells, akin to atomic shells in the periodic table. Such nanoparticles are referred to as "superatoms". The electronic shell levels are highly degenerate giving rise to sharp peaks in the density of states, which can enable exceptionally strong electron pairing in certain clusters containing tens to hundreds of atoms. A spectroscopic investigation of size - resolved aluminum nanoclusters has revealed a sharp rise in the density of states near the Fermi level as the temperature decreases towards 100 K. The effect is especially prominent in the closed-shell "magic" cluster Al66 [1, 2]. The characteristics of this behavior are fully consistent with a pairing transition, implying a high temperature superconducting state with Tc < 100K. This value exceeds that of bulk aluminum by two orders of magnitude. As a new class of high-temperature superconductors, such metal nanocluster particles are promising building blocks for high-Tc materials, devices, and networks. ---------- 1. Halder, A., Liang, A., Kresin, V. V. A novel feature in aluminum cluster photoionization spectra and possibility of electron pairing at T 100K. Nano Lett 15, 1410 - 1413 (2015) 2. Halder, A., Kresin, V. V. A transition in the density of states of metal "superatom" nanoclusters and evidence for superconducting pairing at T 100K. Phys. Rev. B 92, 214506 (2015).

Organic High Electron Mobility Transistors Realized by 2D Electron Gas.

PubMed

Zhang, Panlong; Wang, Haibo; Yan, Donghang

2017-09-01

A key breakthrough in inorganic modern electronics is the energy-band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field-effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high-mobility crystalline organic materials. Therefore, there emerges a chance for applying energy-band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy-band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm 2 V -1 s -1 , and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy-band engineering, offering a promising way for the step forward of organic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-resolution Auger-electron spectroscopy induced by positron annihilation on Fe, Ni, Cu, Zn, Pd, and Au

NASA Astrophysics Data System (ADS)

Hugenschmidt, C.; Mayer, J.; Schreckenbach, K.

2010-04-01

Positron annihilation induced Auger electron spectroscopy (PAES) enables almost background free, non-destructive surface analysis with high surface selectivity. The Auger-spectrometer at the high intense positron source NEPOMUC now allows to record positron annihilation induced Auger spectra within a short data acquisition time of 10-80 minutes. With a new hemispherical electron energy analyzer and due to the exceptional peak to noise ratio, we succeeded to measure Auger-transitions such as the M2,3V V double peak of nickel with high energy resolution. The relative Auger-electron intensities are obtained by the analysis of the recorded positron annihilation induced Auger spectra for the surfaces of Fe, Ni, Cu, Pd and Au. It is demonstrated, that high-resolution PAES allows to determine experimentally the relative surface core annihilation probability of various atomic levels.

Frequency quenching of microwave-induced resistance oscillations in a high-mobility two-dimensional electron gas

NASA Astrophysics Data System (ADS)

Studenikin, S. A.; Sachrajda, A. S.; Gupta, J. A.; Wasilewski, Z. R.; Fedorych, O. M.; Byszewski, M.; Maude, D. K.; Potemski, M.; Hilke, M.; West, K. W.; Pfeiffer, L. N.

2007-10-01

The frequency dependence of microwave-induced resistance oscillations (MIROs) has been studied experimentally in high-mobility electron GaAs/AlGaAs structures to explore the limits at which these oscillations can be observed. It is found that in dc transport experiments at frequencies above 120GHz , MIROs start to quench, while above 230GHz , they completely disappear. The results will need to be understood theoretically but are qualitatively discussed within a model in which forced electronic charge oscillations (plasmons) play an intermediate role in the interaction process between the radiation and the single-particle electron excitations between Landau levels.

Sterilization of foods with low-energy electrons (``soft-electrons'')

NASA Astrophysics Data System (ADS)

Hayashi, Toru; Takahashi, Yoko; Todoriki, Setsuko

1998-06-01

Electrons with an energy of 300 keV or lower were defined as "Soft-electrons", which showed several advantages over conventional irradiation with gamma-rays or high-energy electrons in decontamination of grains and spices. Energies of electrons necessary to reduce microbial loads to levels lower than 10 CFU/g were 60 keV for brown rice, 75 keV for wheat, 100 keV for white pepper, coriander and basil, 130 keV for buckwheat, 160 keV for rough rice, and 210 keV for black pepper. Electrons with such energies did not significantly influence the quality.

Alumina Based 500 C Electronic Packaging Systems and Future Development

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu

2012-01-01

NASA space and aeronautical missions for probing the inner solar planets as well as for in situ monitoring and control of next-generation aeronautical engines require high-temperature environment operable sensors and electronics. A 96% aluminum oxide and Au thick-film metallization based packaging system including chip-level packages, printed circuit board, and edge-connector is in development for high temperature SiC electronics. An electronic packaging system based on this material system was successfully tested and demonstrated with SiC electronics at 500 C for over 10,000 hours in laboratory conditions previously. In addition to the tests in laboratory environments, this packaging system has more recently been tested with a SiC junction field effect transistor (JFET) on low earth orbit through the NASA Materials on the International Space Station Experiment 7 (MISSE7). A SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE7 suite to International Space Station via a Shuttle mission and tested on the orbit for eighteen months. A summary of results of tests in both laboratory and space environments will be presented. The future development of alumina based high temperature packaging using co-fired material systems for improved performance at high temperature and more feasible mass production will also be discussed.

10 CFR 2.1006 - Privilege.

Code of Federal Regulations, 2013 CFR

2013-01-01

... Licenses for the Receipt of High-Level Radioactive Waste at a Geologic Repository § 2.1006 Privilege. (a... Presiding Officer, must be provided in electronic form by the party, interested governmental participant, or... this section, circulated drafts not otherwise privileged shall be provided for electronic access...

10 CFR 2.1009 - Procedures.

Code of Federal Regulations, 2011 CFR

2011-01-01

... Applicable to Proceedings for the Issuance of Licenses for the Receipt of High-Level Radioactive Waste at a... to provide electronic files of documentary material ; (2) Establish procedures to implement the... responsibility to provide electronic files of documentary material; (4) Ensure that all documents carry the...

10 CFR 2.1009 - Procedures.

Code of Federal Regulations, 2010 CFR

2010-01-01

... Applicable to Proceedings for the Issuance of Licenses for the Receipt of High-Level Radioactive Waste at a... to provide electronic files of documentary material ; (2) Establish procedures to implement the... responsibility to provide electronic files of documentary material; (4) Ensure that all documents carry the...

10 CFR 2.1009 - Procedures.

Code of Federal Regulations, 2012 CFR

2012-01-01

... Applicable to Proceedings for the Issuance of Licenses for the Receipt of High-Level Radioactive Waste at a... to provide electronic files of documentary material ; (2) Establish procedures to implement the... responsibility to provide electronic files of documentary material; (4) Ensure that all documents carry the...

10 CFR 2.1006 - Privilege.

Code of Federal Regulations, 2014 CFR

2014-01-01

... Licenses for the Receipt of High-Level Radioactive Waste at a Geologic Repository § 2.1006 Privilege. (a... Presiding Officer, must be provided in electronic form by the party, interested governmental participant, or... this section, circulated drafts not otherwise privileged shall be provided for electronic access...

Sensitivity, completeness and agreement of the tuberculosis electronic system in Ho Chi Minh City, Viet Nam.

PubMed

Thai, L H; Nhat, L M; Shah, N; Lyss, S; Ackers, M

2017-12-21

Setting: Since 2011, tuberculosis (TB) clinics in Ho Chi Minh City (HCMC), Viet Nam, have been entering data from a paper-based TB treatment register into an electronic database known as VITIMES (Viet Nam TB Information Management Electronic System), which is currently used in parallel with the paper system. Objective: To evaluate the sensitivity, completeness and agreement of data in VITIMES with that of paper-based registers among TB patients co-infected with the human immunodeficiency virus (HIV) being treated for TB in HCMC. Design: This was a retrospective data review of all TB-HIV patients receiving anti-tuberculosis treatment in each of the 24 district TB clinics in HCMC in 2013. Data were abstracted from the paper-based TB treatment registers at district level and extracted electronically at the provincial level. Records were matched based on name, age and address. The sensitivity, completeness and agreement of the electronic data were compared with data from the paper system. Results: The findings showed that the electronic system had high sensitivity (99.2%), high completeness (87-99%) and high agreement (κ 0.78-0.97) for all variables. Conclusion: The results of this study suggest that data are being correctly entered into VITIMES and that patient data can be directly entered into VITIMES instead of having a parallel, paper-based system.

Sensitivity, completeness and agreement of the tuberculosis electronic system in Ho Chi Minh City, Viet Nam

PubMed Central

Nhat, L. M.; Shah, N.; Lyss, S.; Ackers, M.

2017-01-01

Setting: Since 2011, tuberculosis (TB) clinics in Ho Chi Minh City (HCMC), Viet Nam, have been entering data from a paper-based TB treatment register into an electronic database known as VITIMES (Viet Nam TB Information Management Electronic System), which is currently used in parallel with the paper system. Objective: To evaluate the sensitivity, completeness and agreement of data in VITIMES with that of paper-based registers among TB patients co-infected with the human immunodeficiency virus (HIV) being treated for TB in HCMC. Design: This was a retrospective data review of all TB-HIV patients receiving anti-tuberculosis treatment in each of the 24 district TB clinics in HCMC in 2013. Data were abstracted from the paper-based TB treatment registers at district level and extracted electronically at the provincial level. Records were matched based on name, age and address. The sensitivity, completeness and agreement of the electronic data were compared with data from the paper system. Results: The findings showed that the electronic system had high sensitivity (99.2%), high completeness (87–99%) and high agreement (κ 0.78–0.97) for all variables. Conclusion: The results of this study suggest that data are being correctly entered into VITIMES and that patient data can be directly entered into VITIMES instead of having a parallel, paper-based system. PMID:29584795

Paper-like electronic displays: Large-area rubber-stamped plastic sheets of electronics and microencapsulated electrophoretic inks

PubMed Central

Rogers, John A.; Bao, Zhenan; Baldwin, Kirk; Dodabalapur, Ananth; Crone, Brian; Raju, V. R.; Kuck, Valerie; Katz, Howard; Amundson, Karl; Ewing, Jay; Drzaic, Paul

2001-01-01

Electronic systems that use rugged lightweight plastics potentially offer attractive characteristics (low-cost processing, mechanical flexibility, large area coverage, etc.) that are not easily achieved with established silicon technologies. This paper summarizes work that demonstrates many of these characteristics in a realistic system: organic active matrix backplane circuits (256 transistors) for large (≈5 × 5-inch) mechanically flexible sheets of electronic paper, an emerging type of display. The success of this effort relies on new or improved processing techniques and materials for plastic electronics, including methods for (i) rubber stamping (microcontact printing) high-resolution (≈1 μm) circuits with low levels of defects and good registration over large areas, (ii) achieving low leakage with thin dielectrics deposited onto surfaces with relief, (iii) constructing high-performance organic transistors with bottom contact geometries, (iv) encapsulating these transistors, (v) depositing, in a repeatable way, organic semiconductors with uniform electrical characteristics over large areas, and (vi) low-temperature (≈100°C) annealing to increase the on/off ratios of the transistors and to improve the uniformity of their characteristics. The sophistication and flexibility of the patterning procedures, high level of integration on plastic substrates, large area coverage, and good performance of the transistors are all important features of this work. We successfully integrate these circuits with microencapsulated electrophoretic “inks” to form sheets of electronic paper. PMID:11320233

Electronic structure and electron-phonon coupling in TiH$$_2$$

DOE PAGES

Shanavas, Kavungal Veedu; Lindsay, Lucas R.; Parker, David S.

2016-06-15

Calculations using first principles methods and strong coupling theory are carried out to understand the electronic structure and superconductivity in cubic and tetragonal TiHmore » $$_2$$. A large electronic density of states at the Fermi level in the cubic phase arises from Ti-$$t_{2g}$$ states and leads to a structural instability against tetragonal distortion at low temperatures. However, constraining the in-plane lattice constants diminishes the energy gain associated with the tetragonal distortion, allowing the cubic phase to be stable at low temperatures. Furthermore, calculated phonon dispersions show decoupled acoustic and optic modes arising from Ti and H vibrations, respectively and frequencies of optic modes to be rather high. The cubic phase has a large electron-phonon coupling parameter $$\\lambda$$ and critical temperature of several K. Contribution of the hydrogen sublattice to $$\\lambda$$ is found to be small in this material, which we understand from strong coupling theory to be due to the small H-$s$ DOS at the Fermi level and high energy of hydrogen modes at the tetrahedral sites.« less

AQBE — QBE Style Queries for Archetyped Data

NASA Astrophysics Data System (ADS)

Sachdeva, Shelly; Yaginuma, Daigo; Chu, Wanming; Bhalla, Subhash

Large-scale adoption of electronic healthcare applications requires semantic interoperability. The new proposals propose an advanced (multi-level) DBMS architecture for repository services for health records of patients. These also require query interfaces at multiple levels and at the level of semi-skilled users. In this regard, a high-level user interface for querying the new form of standardized Electronic Health Records system has been examined in this study. It proposes a step-by-step graphical query interface to allow semi-skilled users to write queries. Its aim is to decrease user effort and communication ambiguities, and increase user friendliness.

Electron energy distributions in uranium helium mixtures. M.S. Thesis

NASA Technical Reports Server (NTRS)

Makowski, M. A.

1977-01-01

The high energy portion of the electron energy distribution for mixtures of uranium and helium at 1 atm, 5000 K, and a neutron flux of 2x10 to the 12th power/sq cm-sec have been calculated. The addition of He improves the heat transport characteristics of the plasma and has the feature that the He energy levels lie in the high energy portion of the electron distribution, potentially allowing non maxwellian excitation. It is concluded, however, that the resulting reaction rates are marginal relative to achieving inversion in He.

Enhancement of High-Speed Infrared Array Electronics (Center Director's Discretionary Fund)

NASA Technical Reports Server (NTRS)

Sutherland, W. T.

1996-01-01

A state-of-the-art infrared detector was to be used as the sensor in a new spectrometer-camera for astronomical observations. The sensitivity of the detector required the use of low-noise, high-speed electronics in the system design. The key component in the electronic system was the pre-amplifier that amplified the low voltage signal coming from the detector. The system was designed based on the selection of the amplifier and that was driven by the maximum noise level, which would yield the desired sensitivity for the telescope system.

An Experimental and Quantum Chemical Study of the Electronic Spectrum of the HBCl Free Radical

NASA Astrophysics Data System (ADS)

Gharaibeh, Mohammed A.; Nagarajan, Ramya; Clouthier, Dennis J.; Tarroni, Ricardo

2012-06-01

The chloroborane (HBCl) free radical has a complex electronic spectrum in the visible that involves a transition from a bent ground state to a linear excited state, both of which are the Renner-Teller components of what would be a ^2π state at linearity. We have used the synchronous-scan LIF and single vibronic level emission techniques to untangle the many overlapping vibronic bands and assign upper state K quantum numbers for jet-cooled HBCl and DBCl. The radicals were produced in a pulsed electric discharge jet using a precursor mixture of boron trichloride (BCl_3) and hydrogen or deuterium in high-pressure argon. As an important aid to understanding the data, the ground and excited state high level ab initio potential energy surfaces (PES) have been calculated and the vibrational levels obtained variationally. The calculated ground state levels are in excellent agreement with the emission data validating the quality of the PES. Aside from an approximately 100 cm-1 shift in the upper state electronic term value, the calculated excited state vibrational energy levels and isotope shifts match the LIF data very well, allowing the observed bands to be assigned with confidence.

Uncovering the Key Role of the Fermi Level of the Electron Mediator in a Z-Scheme Photocatalyst by Detecting the Charge Transfer Process of WO3-metal-gC3N4 (Metal = Cu, Ag, Au).

PubMed

Li, Houfen; Yu, Hongtao; Quan, Xie; Chen, Shuo; Zhang, Yaobin

2016-01-27

Z-scheme photocatalytic system shows superiority in degradation of refractory pollutants and water splitting due to the high redox capacities caused by its unique charge transfer behaviors. As a key component of Z-scheme system, the electron mediator plays an important role in charge carrier migration. According to the energy band theory, we believe the interfacial energy band bendings facilitate the electron transfer via Z-scheme mechanism when the Fermi level of electron mediator is between the Fermi levels of Photosystem II (PS II) and Photosystem I (PS I), whereas charge transfer is inhibited in other cases as energy band barriers would form at the semiconductor-metal interfaces. Here, this inference was verified by the increased hydroxyl radical generation and improved photocurrent on WO3-Cu-gC3N4 (with the desired Fermi level structure), which were not observed on either WO3-Ag-gC3N4 or WO3-Au-gC3N4. Finally, photocatalytic degradation rate of 4-nonylphenol on WO3-Cu-gC3N4 was proved to be as high as 11.6 times than that of WO3-gC3N4, further demonstrating the necessity of a suitable electron mediator in Z-scheme system. This study provides scientific basis for rational construction of Z-scheme photocatalytic system.

Cyclic evolution of the electron temperature and density in dusty low-pressure radio frequency plasmas with pulsed injection of hexamethyldisiloxane

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garofano, V.; Stafford, L., E-mail: luc.stafford@umontreal.ca, E-mail: kremena.makasheva@laplace.univ-tlse.fr; Despax, B.

2015-11-02

Optical emission spectroscopy was used to analyze the very-low-frequency cyclic evolution of the electron energy and density caused by repetitive formation and loss of dust nanoparticles in argon plasmas with pulsed injection of hexamethyldisiloxane (HMDSO, [CH{sub 3}]{sub 6}Si{sub 2}O). After elaborating a Boltzmann diagram for Ar high-lying levels and a collisional-radiative model for Ar 2p (Paschen notation) states, temperatures characterizing the low- and high-energy parts of the electron population were calculated. Relative electron densities were also estimated from relative line emission intensities. Both temperatures increase when the dust occupation increases, and then decrease when dust is lost. The opposite trendmore » was observed for the electron density. Such cyclic behaviors of the electron energy and electron density in the HMDSO-containing plasmas are in good agreement with the evolution processes in dusty plasmas, in which the formation of negative ions followed by an electron attachment on the surfaces of the nanoparticles is a critical phenomenon driving dust growth.« less

Enhanced electron yield from laser-driven wakefield acceleration in high-Z gas jets.

PubMed

Mirzaie, Mohammad; Hafz, Nasr A M; Li, Song; Liu, Feng; He, Fei; Cheng, Ya; Zhang, Jie

2015-10-01

An investigation of the electron beam yield (charge) form helium, nitrogen, and neon gas jet plasmas in a typical laser-plasma wakefield acceleration experiment is carried out. The charge measurement is made by imaging the electron beam intensity profile on a fluorescent screen into a charge coupled device which was cross-calibrated with an integrated current transformer. The dependence of electron beam charge on the laser and plasma conditions for the aforementioned gases are studied. We found that laser-driven wakefield acceleration in low Z-gas jet targets usually generates high-quality and well-collimated electron beams with modest yields at the level of 10-100 pC. On the other hand, filamentary electron beams which are observed from high-Z gases at higher densities reached much higher yields. Evidences for cluster formation were clearly observed in the nitrogen gas jet target, where we received the highest electron beam charge of ∼1.7 nC. Those intense electron beams will be beneficial for the applications on the generation of bright X-rays, gamma rays radiations, and energetic positrons via the bremsstrahlung or inverse-scattering processes.

Printed Carbon Nanotube Electronics and Sensor Systems.

PubMed

Chen, Kevin; Gao, Wei; Emaminejad, Sam; Kiriya, Daisuke; Ota, Hiroki; Nyein, Hnin Yin Yin; Takei, Kuniharu; Javey, Ali

2016-06-01

Printing technologies offer large-area, high-throughput production capabilities for electronics and sensors on mechanically flexible substrates that can conformally cover different surfaces. These capabilities enable a wide range of new applications such as low-cost disposable electronics for health monitoring and wearables, extremely large format electronic displays, interactive wallpapers, and sensing arrays. Solution-processed carbon nanotubes have been shown to be a promising candidate for such printing processes, offering stable devices with high performance. Here, recent progress made in printed carbon nanotube electronics is discussed in terms of materials, processing, devices, and applications. Research challenges and opportunities moving forward from processing and system-level integration points of view are also discussed for enabling practical applications. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Positrons vs electrons channeling in silicon crystal: energy levels, wave functions and quantum chaos manifestations

NASA Astrophysics Data System (ADS)

Shul'ga, N. F.; Syshchenko, V. V.; Tarnovsky, A. I.; Solovyev, I. I.; Isupov, A. Yu.

2018-01-01

The motion of fast electrons through the crystal during axial channeling could be regular and chaotic. The dynamical chaos in quantum systems manifests itself in both statistical properties of energy spectra and morphology of wave functions of the individual stationary states. In this report, we investigate the axial channeling of high and low energy electrons and positrons near [100] direction of a silicon crystal. This case is particularly interesting because of the fact that the chaotic motion domain occupies only a small part of the phase space for the channeling electrons whereas the motion of the channeling positrons is substantially chaotic for the almost all initial conditions. The energy levels of transverse motion, as well as the wave functions of the stationary states, have been computed numerically. The group theory methods had been used for classification of the computed eigenfunctions and identification of the non-degenerate and doubly degenerate energy levels. The channeling radiation spectrum for the low energy electrons has been also computed.

Evaluation of oxygen exposure levels and polyphenolic content of red wines using an electronic panel formed by an electronic nose and an electronic tongue.

PubMed

Rodriguez-Mendez, M L; Apetrei, C; Gay, M; Medina-Plaza, C; de Saja, J A; Vidal, S; Aagaard, O; Ugliano, M; Wirth, J; Cheynier, V

2014-07-15

An electronic panel formed by an electronic nose and an electronic tongue has been used to analyse red wines showing high and low phenolic contents, obtained by flash release and traditional soaking, respectively, and processed with or without micro-oxygenation. Four oxygen transfer rate conditions (0.8, 1.9, 8.0, and 11.9 μl oxygen/bottle/day) were ensured by using synthetic closures with controlled oxygen permeability and storage under controlled atmosphere. Twenty-five chemical parameters associated with the polyphenolic composition, the colour indices and the levels of oxygen were measured in triplicate and correlated with the signals registered (seven replicas) by means of the electronic nose and the electronic tongue using partial least squares regression analysis. The electronic nose and the electronic tongue showed particularly good correlations with those parameters associated with the oxygen levels and, in particular, with the influence of the porosity of the closure to oxygen exposure. In turn, the electronic tongue was particularly sensitive to redox species including oxygen and phenolic compounds. It has been demonstrated that a combined system formed from the electronic nose and the electronic tongue provides information about the chemical composition of both the gas and the liquid phase of red wines. This complementary information improves the capacity to predict values of oxygen-related parameters, phenolic content and colour parameters. Copyright © 2014 Elsevier Ltd. All rights reserved.

Methods and Instrumentation for Biomagnetism.

DTIC Science & Technology

1988-02-28

at discrete frequencies from nearby machinery. High levels of radio frequency noise, as from communication systems, may also interfere with the...Buchanan et al., 1987). It depends on both a commercial Gifford-McMahon refrigerator and a specially designed Joule-Thomson refrigerator, where high ...magnetically shielded room. With such electronic noise cancellation, the noise level is essentially the intrinsic sensor noise from high frequencies

The electronic structures and work functions of (100) surface of typical binary and doped REB6 single crystals

NASA Astrophysics Data System (ADS)

Liu, Hongliang; Zhang, Xin; Xiao, Yixin; Zhang, Jiuxing

2018-03-01

The density function theory been used to calculate the electronic structures of binary and doped rare earth hexaborides (REB6), which exhibits the large density of states (DOS) near Fermi level. The d orbital elections of RE element contribute the electronic states of election emission near the Fermi level, which imply that the REB6 (RE = La, Ce, Gd) with wide distribution of high density d orbital electrons could provide a lower work function and excellent emission properties. Doping RE elements into binary REB6 can adjust DOS and the position of the Fermi energy level. The calculated work functions of considered REB6 (100) surface show that the REB6 (RE = La, Ce, Gd) have lower work function and doping RE elements with active d orbital electrons can significantly reduce work function of binary REB6. The thermionic emission test results are basically accordant with the calculated value, proving the first principles calculation could provide a good theoretical guidance for the study of electron emission properties of REB6.

High temperature specifically affects the photoprotective responses of chlorophyll b-deficient wheat mutant lines.

PubMed

Brestic, Marian; Zivcak, Marek; Kunderlikova, Kristyna; Allakhverdiev, Suleyman I

2016-12-01

The effects of high temperature on CO 2 assimilation rate, processes associated with photosynthetic electron and proton transport, as well as photoprotective responses, were studied in chlorophyll b-deficient mutant lines (ANK-32A and ANK-32B) and wild type (WT) of wheat (Triticum aestivum L.). Despite the low chlorophyll content and chlorophyll a-to-b ratio, the non-stressed mutant plants had the similar level of CO 2 assimilation and photosynthetic responses as WT. However, in ANK mutant plants exposed to prolonged high temperature episode (42 °C for ~10 h), we observed lower CO 2 assimilation compared to WT, especially when a high CO 2 supply was provided. In all heat-exposed plants, we found approximately the same level of PSII photoinhibition, but the decrease in content of photooxidizable PSI was higher in ANK mutant plants compared to WT. The PSI damage can be well explained by the level of overreduction of PSI acceptor side observed in plants exposed to high temperature, which was, in turn, the result of the insufficient transthylakoid proton gradient associated with low non-photochemical quenching and lack of ability to downregulate the linear electron transport to keep the reduction state of PSI acceptor side low enough. Compared to WT, the ANK mutant lines had lower capacity to drive the cyclic electron transport around PSI in moderate and high light; it confirms the protective role of cyclic electron transport for the protection of PSI against photoinhibition. Our results, however, also suggest that the inactivation of PSI in heat stress conditions can be the protective mechanism against photooxidative damage of chloroplast and cell structures.

Molecular design of photovoltaic materials for polymer solar cells: toward suitable electronic energy levels and broad absorption.

PubMed

Li, Yongfang

2012-05-15

Bulk heterojunction (BHJ) polymer solar cells (PSCs) sandwich a blend layer of conjugated polymer donor and fullerene derivative acceptor between a transparent ITO positive electrode and a low work function metal negative electrode. In comparison with traditional inorganic semiconductor solar cells, PSCs offer a simpler device structure, easier fabrication, lower cost, and lighter weight, and these structures can be fabricated into flexible devices. But currently the power conversion efficiency (PCE) of the PSCs is not sufficient for future commercialization. The polymer donors and fullerene derivative acceptors are the key photovoltaic materials that will need to be optimized for high-performance PSCs. In this Account, I discuss the basic requirements and scientific issues in the molecular design of high efficiency photovoltaic molecules. I also summarize recent progress in electronic energy level engineering and absorption spectral broadening of the donor and acceptor photovoltaic materials by my research group and others. For high-efficiency conjugated polymer donors, key requirements are a narrower energy bandgap (E(g)) and broad absorption, relatively lower-lying HOMO (the highest occupied molecular orbital) level, and higher hole mobility. There are three strategies to meet these requirements: D-A copolymerization for narrower E(g) and lower-lying HOMO, substitution with electron-withdrawing groups for lower-lying HOMO, and two-dimensional conjugation for broad absorption and higher hole mobility. Moreover, better main chain planarity and less side chain steric hindrance could strengthen π-π stacking and increase hole mobility. Furthermore, the molecular weight of the polymers also influences their photovoltaic performance. To produce high efficiency photovoltaic polymers, researchers should attempt to increase molecular weight while maintaining solubility. High-efficiency D-A copolymers have been obtained by using benzodithiophene (BDT), dithienosilole (DTS), or indacenodithiophene (IDT) donor unit and benzothiadiazole (BT), thienopyrrole-dione (TPD), or thiazolothiazole (TTz) acceptor units. The BDT unit with two thienyl conjugated side chains is a highly promising unit in constructing high-efficiency copolymer donor materials. The electron-withdrawing groups of ester, ketone, fluorine, or sulfonyl can effectively tune the HOMO energy levels downward. To improve the performance of fullerene derivative acceptors, researchers will need to strengthen absorption in the visible spectrum, upshift the LUMO (the lowest unoccupied molecular orbital) energy level, and increase the electron mobility. [6,6]-Phenyl-C(71)-butyric acid methyl ester (PC(70)BM) is superior to [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) because C(70) absorbs visible light more efficiently. Indene-C(60) bisadduct (ICBA) and Indene-C(70) bisadduct (IC(70)BA) show 0.17 and 0.19 eV higher LUMO energy levels, respectively, than PCBM, due to the electron-rich character of indene and the effect of bisadduct. ICBA and IC(70)BA are excellent acceptors for the P3HT-based PSCs.

Refined energetic ordering for sulphate-water (n = 3-6) clusters using high-level electronic structure calculations

NASA Astrophysics Data System (ADS)

Lambrecht, Daniel S.; McCaslin, Laura; Xantheas, Sotiris S.; Epifanovsky, Evgeny; Head-Gordon, Martin

2012-10-01

This work reports refinements of the energetic ordering of the known low-energy structures of sulphate-water clusters ? (n = 3-6) using high-level electronic structure methods. Coupled cluster singles and doubles with perturbative triples (CCSD(T)) is used in combination with an estimate of basis set effects up to the complete basis set limit using second-order Møller-Plesset theory. Harmonic zero-point energy (ZPE), included at the B3LYP/6-311 + + G(3df,3pd) level, was found to have a significant effect on the energetic ordering. In fact, we show that the energetic ordering is a result of a delicate balance between the electronic and vibrational energies. Limitations of the ZPE calculations, both due to electronic structure errors, and use of the harmonic approximation, probably constitute the largest remaining errors. Due to the often small energy differences between cluster isomers, and the significant role of ZPE, deuteration can alter the relative energies of low-lying structures, and, when it is applied in conjunction with calculated harmonic ZPEs, even alters the global minimum for n = 5. Experiments on deuterated clusters, as well as more sophisticated vibrational calculations, may therefore be quite interesting.

10 CFR 2.1009 - Procedures.

Code of Federal Regulations, 2013 CFR

2013-01-01

... Issuance of Licenses for the Receipt of High-Level Radioactive Waste at a Geologic Repository § 2.1009... official who will be responsible for administration of its responsibility to provide electronic files of... training to its staff on the procedures for implementation of the responsibility to provide electronic...

10 CFR 2.1009 - Procedures.

Code of Federal Regulations, 2014 CFR

2014-01-01

... Issuance of Licenses for the Receipt of High-Level Radioactive Waste at a Geologic Repository § 2.1009... official who will be responsible for administration of its responsibility to provide electronic files of... training to its staff on the procedures for implementation of the responsibility to provide electronic...

Measurement and reduction of low-level radon background in the KATRIN experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fränkle, F. M.

The KArlsruhe TRItium Neutrino (KATRIN) experiment is a next generation, model independent, large scale experiment to determine the mass of the electron anti-neutrino by investigating the kinematics of tritium beta decay with a sensitivity of 200 meV/c{sup 2}. The measurement setup consists of a high luminosity windowless gaseous molecular tritium source (WGTS), a differential and cryogenic pumped electron transport and tritium retention section, a tandem spectrometer section (pre-spectrometer and main spectrometer) for energy analysis, followed by a detector system for counting transmitted beta decay electrons. Measurements performed at the KATRIN pre-spectrometer test setup showed that the decay of radon (Rn)more » atoms in the volume of the KATRIN spectrometers is a major background source. Rn atoms from low-level radon emanation of materials inside the vacuum region of the KATRIN spectrometers are able to penetrate deep into the magnetic flux tube so that the alpha decay of Rn contributes to the background. Of particular importance are electrons emitted in processes accompanying the Rn alpha decay, such as shake-off, internal conversion of excited levels in the Rn daughter atoms and Auger electrons. Lowenergy electrons (< 100 eV) directly contribute to the background in the signal region. High-energy electrons can be stored magnetically inside the volume of the spectrometer and are able to create thousands of secondary electrons via subsequent ionization processes with residual gas molecules. In order to reduce the Rn induced background different active and passive counter measures were developed and tested. This proceeding will give an overview on Rn sources within the KATRIN spectrometer, describes how Rn decays inside the spectrometer produce background events at the detector and presents different counter measures to reduce the Rn induced background.« less

Measurement and reduction of low-level radon background in the KATRIN experiment

NASA Astrophysics Data System (ADS)

Fränkle, F. M.

2013-08-01

The KArlsruhe TRItium Neutrino (KATRIN) experiment is a next generation, model independent, large scale experiment to determine the mass of the electron anti-neutrino by investigating the kinematics of tritium beta decay with a sensitivity of 200 meV/c2. The measurement setup consists of a high luminosity windowless gaseous molecular tritium source (WGTS), a differential and cryogenic pumped electron transport and tritium retention section, a tandem spectrometer section (pre-spectrometer and main spectrometer) for energy analysis, followed by a detector system for counting transmitted beta decay electrons. Measurements performed at the KATRIN pre-spectrometer test setup showed that the decay of radon (Rn) atoms in the volume of the KATRIN spectrometers is a major background source. Rn atoms from low-level radon emanation of materials inside the vacuum region of the KATRIN spectrometers are able to penetrate deep into the magnetic flux tube so that the alpha decay of Rn contributes to the background. Of particular importance are electrons emitted in processes accompanying the Rn alpha decay, such as shake-off, internal conversion of excited levels in the Rn daughter atoms and Auger electrons. Lowenergy electrons (< 100 eV) directly contribute to the background in the signal region. High-energy electrons can be stored magnetically inside the volume of the spectrometer and are able to create thousands of secondary electrons via subsequent ionization processes with residual gas molecules. In order to reduce the Rn induced background different active and passive counter measures were developed and tested. This proceeding will give an overview on Rn sources within the KATRIN spectrometer, describes how Rn decays inside the spectrometer produce background events at the detector and presents different counter measures to reduce the Rn induced background.

Stability of Nonstationary Cooling of Pure Hydrogen Gas with Respect to the Number of Discrete Levels Taken into Account

NASA Astrophysics Data System (ADS)

Belova, O. M.; Bychkov, K. V.

2018-03-01

The effect of the number K of atomic hydrogen levels taken into account on the cooling of the gas behind a shock front is studied. The calculations are done for the conditions in the atmospheres of long-period Mira Ceti type variables. K ranges from 2 to 25. The electron temperature Te(t; K) and ionization state x(r,K) asymptotically approach limiting functions Te(t) and x(t) that are independent of K. After the maximum electron temperature is reached, a partial equilibrium phase sets in, during which the populations of the highly excited discrete levels with principal quantum numbers ≥ 8 obey the Saha equation for the instantaneous electron temperature and density.

Investigation of electronic structure and chemical bonding of intermetallic Pd2HfIn: An ab-initio study

NASA Astrophysics Data System (ADS)

Bano, Amreen; Gaur, N. K.

2018-05-01

Ab-initio calculations are carried out to study the electronic and chemical bonding properties of Intermetallic full Heusler compound Pd2HfIn which crystallizes in F-43m structure. All calculations are performed by using density functional theory (DFT) based code Quantum Espresso. Generalized gradient approximations (GGA) of Perdew- Burke- Ernzerhof (PBE) have been adopted for exchange-correlation potential. Calculated electronic band structure reveals the metallic character of the compound. From partial density of states (PDoS), we found the presence of relatively high intensity electronic states of 4d-Pd atom at Fermi level. We have found a pseudo-gap just abouve the Fermi level and N(E) at Fermi level is observed to be 0.8 states/eV, these finding indicates the existence of superconducting character in Pd2HfIn.

Imaging the square of the correlated two-electron wave function of a hydrogen molecule

DOE PAGES

Waitz, M.; Bello, R. Y.; Metz, D.; ...

2017-12-22

The toolbox for imaging molecules is well-equipped today. Some techniques visualize the geometrical structure, others the electron density or electron orbitals. Molecules are many-body systems for which the correlation between the constituents is decisive and the spatial and the momentum distribution of one electron depends on those of the other electrons and the nuclei. Such correlations have escaped direct observation by imaging techniques so far. Here, we implement an imaging scheme which visualizes correlations between electrons by coincident detection of the reaction fragments after high energy photofragmentation. With this technique, we examine the H 2 two-electron wave function in whichmore » electron-electron correlation beyond the mean-field level is prominent. We visualize the dependence of the wave function on the internuclear distance. High energy photoelectrons are shown to be a powerful tool for molecular imaging. Finally, our study paves the way for future time resolved correlation imaging at FELs and laser based X-ray sources.« less

Imaging the square of the correlated two-electron wave function of a hydrogen molecule.

PubMed

Waitz, M; Bello, R Y; Metz, D; Lower, J; Trinter, F; Schober, C; Keiling, M; Lenz, U; Pitzer, M; Mertens, K; Martins, M; Viefhaus, J; Klumpp, S; Weber, T; Schmidt, L Ph H; Williams, J B; Schöffler, M S; Serov, V V; Kheifets, A S; Argenti, L; Palacios, A; Martín, F; Jahnke, T; Dörner, R

2017-12-22

The toolbox for imaging molecules is well-equipped today. Some techniques visualize the geometrical structure, others the electron density or electron orbitals. Molecules are many-body systems for which the correlation between the constituents is decisive and the spatial and the momentum distribution of one electron depends on those of the other electrons and the nuclei. Such correlations have escaped direct observation by imaging techniques so far. Here, we implement an imaging scheme which visualizes correlations between electrons by coincident detection of the reaction fragments after high energy photofragmentation. With this technique, we examine the H 2 two-electron wave function in which electron-electron correlation beyond the mean-field level is prominent. We visualize the dependence of the wave function on the internuclear distance. High energy photoelectrons are shown to be a powerful tool for molecular imaging. Our study paves the way for future time resolved correlation imaging at FELs and laser based X-ray sources.

Imaging the square of the correlated two-electron wave function of a hydrogen molecule

DOE Office of Scientific and Technical Information (OSTI.GOV)

Waitz, M.; Bello, R. Y.; Metz, D.

The toolbox for imaging molecules is well-equipped today. Some techniques visualize the geometrical structure, others the electron density or electron orbitals. Molecules are many-body systems for which the correlation between the constituents is decisive and the spatial and the momentum distribution of one electron depends on those of the other electrons and the nuclei. Such correlations have escaped direct observation by imaging techniques so far. Here, we implement an imaging scheme which visualizes correlations between electrons by coincident detection of the reaction fragments after high energy photofragmentation. With this technique, we examine the H 2 two-electron wave function in whichmore » electron-electron correlation beyond the mean-field level is prominent. We visualize the dependence of the wave function on the internuclear distance. High energy photoelectrons are shown to be a powerful tool for molecular imaging. Finally, our study paves the way for future time resolved correlation imaging at FELs and laser based X-ray sources.« less

Electronic and structural ground state of heavy alkali metals at high pressure

NASA Astrophysics Data System (ADS)

Fabbris, G.; Lim, J.; Veiga, L. S. I.; Haskel, D.; Schilling, J. S.

2015-02-01

Alkali metals display unexpected properties at high pressure, including emergence of low-symmetry crystal structures, which appear to occur due to enhanced electronic correlations among the otherwise nearly free conduction electrons. We investigate the high-pressure electronic and structural ground state of K, Rb, and Cs using x-ray absorption spectroscopy and x-ray diffraction measurements together with a b i n i t i o theoretical calculations. The sequence of phase transitions under pressure observed at low temperature is similar in all three heavy alkalis except for the absence of the o C 84 phase in Cs. Both the experimental and theoretical results point to pressure-enhanced localization of the valence electrons characterized by pseudogap formation near the Fermi level and strong s p d hybridization. Although the crystal structures predicted to host magnetic order in K are not observed, the localization process appears to drive these alkalis closer to a strongly correlated electron state.

Upgraded Readout Electronics for the ATLAS Liquid Argon Calorimeters at the High Luminosity LHC

NASA Astrophysics Data System (ADS)

Andeen, Timothy R.; ATLAS Liquid Argon Calorimeter Group

2012-12-01

The ATLAS liquid-argon calorimeters produce a total of 182,486 signals which are digitized and processed by the front-end and back-end electronics at every triggered event. In addition, the front-end electronics sum analog signals to provide coarsely grained energy sums, called trigger towers, to the first-level trigger system, which is optimized for nominal LHC luminosities. However, the pile-up background expected during the high luminosity phases of the LHC will be increased by factors of 3 to 7. An improved spatial granularity of the trigger primitives is therefore proposed in order to improve the identification performance for trigger signatures, like electrons or photons, at high background rejection rates. For the first upgrade phase in 2018, new Liquid Argon Trigger Digitizer Boards are being designed to receive higher granularity signals, digitize them on detector and send them via fast optical links to a new, off-detector digital processing system. The digital processing system applies digital filtering and identifies significant energy depositions. The refined trigger primitives are then transmitted to the first level trigger system to extract improved trigger signatures. The general concept of the upgraded liquid-argon calorimeter readout together with the various electronics components to be developed for such a complex system is presented. The research activities and architectural studies undertaken by the ATLAS Liquid Argon Calorimeter Group are described, particularly details of the on-going design of mixed-signal front-end electronics, of radiation tolerant optical-links, and of the high-speed off-detector digital processing system.

Two-dimensional array of cold-electron bolometers for high-sensitivity polarization measurements

NASA Astrophysics Data System (ADS)

Kuzmin, L. S.

2012-01-01

A new concept of a two-dimensional array of cold-electron bolometers with distributed dipole antennas in the focal plane for high-sensitivity polarization measurements is proposed. The concept gives a unique combination of high polarization resolution due to a large uniforms array of cold-electron bolometers and optimal matching with junction field effect transistor (JFET) amplifiers because of flexibility in direct-current connections. The noise characteristics are improved due to arriving-signal power distribution among numerous cold-electron bolometers and an increase in their response. This should lead to a significant increase in the sensitivity and dynamic range compared with competing alternative bolometer technologies. The reliability of the twodimensional array significantly increases due to a series-parallel connection of a large number of cold-electron bolometers. High polarization resolution should be ensured due to uniform covering of a substrate by a two-dimensional array over a large area and the absence of the beam compression to small lumped elements. The fundamental sensitivity limit of the cold-electron bolometer array is smaller than photon noise which is considered to be the ultimate level restricted by the background radiation. Estimates of noise of bolometers with the JFET reading system show the possibility of realizing the ultimate sensitivity below the photon-noise level 5 ・10-17 W/Hz1/2 at a frequency of 350 GHz for an optical load with a power of 5 pW. These parameters correspond to the requirements to the receiving system of a BOOMERanG balloon telescope.

2+2 Electronics Technology. Looking Forward to the Future. A Model Secondary/Post-Secondary 2+2 Program To Prepare Students for Employment.

ERIC Educational Resources Information Center

Judson Independent School District, Converse, TX.

This document contains all pertinent information and essential background data necessary to implement the 2+2 electronics program at the high school level. An introduction describes development of the electronics technology 2+2 project that was a joint effort among San Antonio College and Judson, Northside, and North East Independent School…

The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?

PubMed Central

Mao, Ling-Feng; Ning, Huan-Sheng; Wang, Jin-Yan

2015-01-01

Influence of the energy relaxation of the channel electrons on the performance of AlGaN/GaN high-electron mobility transistors (HEMTs) has been investigated using self-consistent solution to the coupled Schrödinger equation and Poisson equation. The first quantized energy level in the inversion layer rises and the average channel electron density decreases when the channel electric field increases from 20 kV/cm to 120 kV/cm. This research also demonstrates that the energy relaxation of the channel electrons can lead to current collapse and suggests that the energy relaxation should be considered in modeling the performance of AlGaN/GaN HEMTs such as, the gate leakage current, threshold voltage, source-drain current, capacitance-voltage curve, etc. PMID:26039589

The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?

PubMed

Mao, Ling-Feng; Ning, Huan-Sheng; Wang, Jin-Yan

2015-01-01

Influence of the energy relaxation of the channel electrons on the performance of AlGaN/GaN high-electron mobility transistors (HEMTs) has been investigated using self-consistent solution to the coupled Schrödinger equation and Poisson equation. The first quantized energy level in the inversion layer rises and the average channel electron density decreases when the channel electric field increases from 20 kV/cm to 120 kV/cm. This research also demonstrates that the energy relaxation of the channel electrons can lead to current collapse and suggests that the energy relaxation should be considered in modeling the performance of AlGaN/GaN HEMTs such as, the gate leakage current, threshold voltage, source-drain current, capacitance-voltage curve, etc.

Time resolved laser induced fluorescence on argon intermediate pressure microwave discharges: Measuring the depopulation rates of the 4p and 5p excited levels as induced by electron and atom collisions

NASA Astrophysics Data System (ADS)

Palomares, J. M.; Graef, W. A. A. D.; Hübner, S.; van der Mullen, J. J. A. M.

2013-10-01

The reaction kinetics in the excitation space of Ar is explored by means of Laser Induced Fluorescence (LIF) experiments using the combination of high rep-rate YAG-Dye laser systems with a well defined and easily controllable surfatron induced plasma setup. The high rep-rate favors the photon statistics while the low energy per pulse avoids intrusive plasma laser interactions. An analysis shows that, despite the low energy per pulse, saturation can still be achieved even when the geometrical overlap and spectral overlap are optimal. Out of the various studies that can be performed with this setup we confine the current paper to the study of the direct responses to the laser pump action of three 4p and one 5p levels of the Ar system. By changing the plasma in a controlled way one gets for these levels the rates of electron and atom quenching and therewith the total destruction rates of electron and atom collisions. Comparison with literature shows that the classical hard sphere collision rate derived for hydrogen gives a good description for the observed electron quenching (e-quenching) in Ar whereas for heavy particle quenching (a-quenching) this agreement was only found for the 5p level. An important parameter in the study of electron excitation kinetics is the location of the boundary in the atomic system for which the number of electron collisions per radiative life time equals unity. It is observed that for the Ar system this boundary is positioned lower than what is expected on grounds of H-like formulas.

Dual-wavelength photo-Hall effect spectroscopy of deep levels in high resistive CdZnTe with negative differential photoconductivity

NASA Astrophysics Data System (ADS)

Musiienko, A.; Grill, R.; Moravec, P.; Korcsmáros, G.; Rejhon, M.; Pekárek, J.; Elhadidy, H.; Šedivý, L.; Vasylchenko, I.

2018-04-01

Photo-Hall effect spectroscopy was used in the study of deep levels in high resistive CdZnTe. The monochromator excitation in the photon energy range 0.65-1.77 eV was complemented by a laser diode high-intensity excitation at selected photon energies. A single sample characterized by multiple unusual features like negative differential photoconductivity and anomalous depression of electron mobility was chosen for the detailed study involving measurements at both the steady and dynamic regimes. We revealed that the Hall mobility and photoconductivity can be both enhanced and suppressed by an additional illumination at certain photon energies. The anomalous mobility decrease was explained by an excitation of the inhomogeneously distributed deep level at the energy Ev + 1.0 eV, thus enhancing potential non-uniformities. The appearance of negative differential photoconductivity was interpreted by an intensified electron occupancy of that level by a direct valence band-to-level excitation. Modified Shockley-Read-Hall theory was used for fitting experimental results by a model comprising five deep levels. Properties of the deep levels and their impact on the device performance were deduced.

Diffusion length measurements using the scanning electron microscope. [in semiconductor devices

NASA Technical Reports Server (NTRS)

Weizer, V. G.

1975-01-01

A measurement technique employing the scanning electron microscope is described in which values of the true bulk diffusion length are obtained. It is shown that surface recombination effects can be eliminated through the application of highly doped surface field layers. The influence of high injection level effects and low-high junction current generation on the resulting measurement was investigated. Close agreement is found between the diffusion lengths measured by this method and those obtained using a penetrating radiation technique.

Predictive Modeling of High-Power Electromagnetic Effects on Electronics (Postprint)

DTIC Science & Technology

2011-09-01

electromagnetic ( HPEM ) pulses at sufficiently high field levels can cause physical damage to electronics. This effect can be explained in terms of the...is caused, an HPEM pulse can still cause data corruption resulting in the system locking up or rebooting itself, an effect we will refer to...language to exercise various functional areas and hence various physical regions of the microcontroller, with the aim of developing fundamental

Tunable High-Intensity Electron Bunch Train Production Based on Nonlinear Longitudinal Space Charge Oscillation

NASA Astrophysics Data System (ADS)

Zhang, Zhen; Yan, Lixin; Du, Yingchao; Zhou, Zheng; Su, Xiaolu; Zheng, Lianmin; Wang, Dong; Tian, Qili; Wang, Wei; Shi, Jiaru; Chen, Huaibi; Huang, Wenhui; Gai, Wei; Tang, Chuanxiang

2016-05-01

High-intensity trains of electron bunches with tunable picosecond spacing are produced and measured experimentally with the goal of generating terahertz (THz) radiation. By imposing an initial density modulation on a relativistic electron beam and controlling the charge density over the beam propagation, density spikes of several-hundred-ampere peak current in the temporal profile, which are several times higher than the initial amplitudes, have been observed for the first time. We also demonstrate that the periodic spacing of the bunch train can be varied continuously either by tuning launching phase of a radio-frequency gun or by tuning the compression of a downstream magnetic chicane. Narrow-band coherent THz radiation from the bunch train was also measured with μ J -level energies and tunable central frequency of the spectrum in the range of ˜0.5 to 1.6 THz. Our results pave the way towards generating mJ-level narrow-band coherent THz radiation and driving high-gradient wakefield-based acceleration.

Tunable High-Intensity Electron Bunch Train Production Based on Nonlinear Longitudinal Space Charge Oscillation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zhen; Yan, Lixin; Du, Yingchao

2016-05-05

High-intensity trains of electron bunches with tunable picosecond spacing are produced and measured experimentally with the goal of generating terahertz (THz) radiation. By imposing an initial density modulation on a relativistic electron beam and controlling the charge density over the beam propagation, density spikes of several-hundred-ampere peak current in the temporal profile, which are several times higher than the initial amplitudes, have been observed for the first time. We also demonstrate that the periodic spacing of the bunch train can be varied continuously either by tuning launching phase of a radiofrequency gun or by tuning the compression of a downstreammore » magnetic chicane. Narrow-band coherent THz radiation from the bunch train was also measured with μJ-level energies and tunable central frequency of the spectrum in the range of ~0.5 to 1.6 THz. Our results pave the way towards generating mJ-level narrow-band coherent THz radiation and driving high-gradient wakefield-based acceleration.« less

Comparison of cryogenic low-pass filters.

PubMed

Thalmann, M; Pernau, H-F; Strunk, C; Scheer, E; Pietsch, T

2017-11-01

Low-temperature electronic transport measurements with high energy resolution require both effective low-pass filtering of high-frequency input noise and an optimized thermalization of the electronic system of the experiment. In recent years, elaborate filter designs have been developed for cryogenic low-level measurements, driven by the growing interest in fundamental quantum-physical phenomena at energy scales corresponding to temperatures in the few millikelvin regime. However, a single filter concept is often insufficient to thermalize the electronic system to the cryogenic bath and eliminate spurious high frequency noise. Moreover, the available concepts often provide inadequate filtering to operate at temperatures below 10 mK, which are routinely available now in dilution cryogenic systems. Herein we provide a comprehensive analysis of commonly used filter types, introduce a novel compact filter type based on ferrite compounds optimized for the frequency range above 20 GHz, and develop an improved filtering scheme providing adaptable broad-band low-pass characteristic for cryogenic low-level and quantum measurement applications at temperatures down to few millikelvin.

Comparison of cryogenic low-pass filters

NASA Astrophysics Data System (ADS)

Thalmann, M.; Pernau, H.-F.; Strunk, C.; Scheer, E.; Pietsch, T.

2017-11-01

Low-temperature electronic transport measurements with high energy resolution require both effective low-pass filtering of high-frequency input noise and an optimized thermalization of the electronic system of the experiment. In recent years, elaborate filter designs have been developed for cryogenic low-level measurements, driven by the growing interest in fundamental quantum-physical phenomena at energy scales corresponding to temperatures in the few millikelvin regime. However, a single filter concept is often insufficient to thermalize the electronic system to the cryogenic bath and eliminate spurious high frequency noise. Moreover, the available concepts often provide inadequate filtering to operate at temperatures below 10 mK, which are routinely available now in dilution cryogenic systems. Herein we provide a comprehensive analysis of commonly used filter types, introduce a novel compact filter type based on ferrite compounds optimized for the frequency range above 20 GHz, and develop an improved filtering scheme providing adaptable broad-band low-pass characteristic for cryogenic low-level and quantum measurement applications at temperatures down to few millikelvin.

10 CFR 2.1007 - Access.

Code of Federal Regulations, 2011 CFR

2011-01-01

... to Proceedings for the Issuance of Licenses for the Receipt of High-Level Radioactive Waste at a Geologic Repository § 2.1007 Access. (a)(1) A system to provide electronic access to the Licensing Support...-license application phase. (2) A system to provide electronic access to the Licensing Support Network...

10 CFR 2.1007 - Access.

Code of Federal Regulations, 2012 CFR

2012-01-01

... to Proceedings for the Issuance of Licenses for the Receipt of High-Level Radioactive Waste at a Geologic Repository § 2.1007 Access. (a)(1) A system to provide electronic access to the Licensing Support...-license application phase. (2) A system to provide electronic access to the Licensing Support Network...

Ultrafast electronic dynamics in unipolar n-doped indium gallium arsenide/gallium arsenide self-assembled quantum dots

NASA Astrophysics Data System (ADS)

Wu, Zong-Kwei J.

2006-12-01

Photodetectors based on intraband infrared absorption in the quantum dots have demonstrated improved performance over its quantum well counterpart by lower dark current, relative temperature insensitivity, and its ability for normal incidence operation. Various scattering processes, including phonon emission/absorption and carrier-carrier scattering, are critical in understanding device operation on the fundamental level. In previous studies, our group has investigated carrier dynamics in both low- and high-density regime. Ultrafast electron-hole scattering and the predicted phonon bottleneck effect in intrinsic quantum dots have been observed. Further examination on electron dynamics in unipolar structures is presented in this thesis. We used n-doped quantum dot in mid-infrared photodetector device structure to study the electron dynamics in unipolar structure. Differential transmission spectroscopy with mid-infrared intraband pump and optical interband probe was implemented to measure the electron dynamics directly without creating extra electron-hole pair, Electron relaxation after excitation was measured under various density and temperature conditions. Rapid capture into quantum dot within ˜ 10 ps was observed due to Auger-type electron-electron scattering. Intradot relaxation from the quantum dot excited state to the ground state was also observed on the time scale of 100 ps. With highly doped electron density in the structure, the inter-sublevel relaxation is dominated by Auger-type electron-electron scattering and the phonon bottleneck effect is circumvented. Nanosecond-scale recovery in larger-sized quantum dots was observed, not intrinsic to electron dynamics but due to band-bending and built-in voltage drift. An ensemble Monte Carlo simulation was also established to model the dynamics in quantum dots and in goad agreement with the experimental results. We presented a comprehensive picture of electron dynamics in the unipolar quantum dot structure. Although the phonon bottleneck is circumvented with high doped electron density, relaxation processes in unipolar quantum dots have been measured with time scales longer than that of bipolar systems. The results explain the operation principles of the quantum dot infrared photodetector on a microscopic level and provide basic understanding for future applications and designs.

Plasma contactor research, 1989

NASA Technical Reports Server (NTRS)

Williams, John D.

1990-01-01

The characteristics of double layers observed by researchers investigating magnetospheric phenomena are contrasted to those observed in plasma contacting experiments. Experiments in the electron collection mode of the plasma contacting process were performed and the results confirm a simple model of this process for current levels ranging to 3 A. Experimental results were also obtained in a study of the process of electron emission from a hollow cathode plasma contactor. High energy ions are observed coming from the cathode in addition to the electrons and a phenomenological model that suggests a mechanism by which this could occur is presented. Experimental results showing the effects of the design parameters of the ambient plasma simulator on the plasma potential, electron temperature, electron density and plasma noise levels induced in plasma contacting experiments are presented. A preferred simulator design is selected on the basis of these results.

Electronic quenching of OH A 2Σ + radicals in collisions with molecular hydrogen

NASA Astrophysics Data System (ADS)

Pollack, Ilana B.; Lei, Yuxiu; Stephenson, Thomas A.; Lester, Marsha I.

2006-04-01

Collisional quenching of electronically excited OH A 2Σ + radicals by molecular hydrogen introduces nonradiative pathways that rapidly remove OH population from the excited state, and result in a significantly decreased fluorescence lifetime. One of these pathways is shown to lead to ground state OH X 2Π products with ˜1 eV of internal excitation in both highly excited rotational levels of v = 1 and the lowest rotational levels of v = 2. This highly nonstatistical OH X 2Π product distribution reflects the passage of the HO-H 2 system through the conical intersection regions that couple the ground and excited state surfaces.

Estimate of radiation damage to low-level electronics of the RF system in the LHC cavities arising from beam gas collisions.

PubMed

Butterworth, A; Ferrari, A; Tsoulou, E; Vlachoudis, V; Wijnands, T

2005-01-01

Monte Carlo simulations have been performed to estimate the radiation damage induced by high-energy hadrons in the digital electronics of the RF low-level systems in the LHC cavities. High-energy hadrons are generated when the proton beams interact with the residual gas. The contributions from various elements-vacuum chambers, cryogenic cavities, wideband pickups and cryomodule beam tubes-have been considered individually, with each contribution depending on the gas composition and density. The probability of displacement damage and single event effects (mainly single event upsets) is derived for the LHC start-up conditions.

Are polynuclear superhalogens without halogen atoms probable? A high-level ab initio case study on triple-bridged binuclear anions with cyanide ligands

NASA Astrophysics Data System (ADS)

Yin, Bing; Li, Teng; Li, Jin-Feng; Yu, Yang; Li, Jian-Li; Wen, Zhen-Yi; Jiang, Zhen-Yi

2014-03-01

The first theoretical exploration of superhalogen properties of polynuclear structures based on pseudohalogen ligand is reported here via a case study on eight triply-bridged [Mg2(CN)5]- clusters. From our high-level ab initio results, all these clusters are superhalogens due to their high vertical electron detachment energies (VDE), of which the largest value is 8.67 eV at coupled-cluster single double triple (CCSD(T)) level. Although outer valence Green's function results are consistent with CCSD(T) in most cases, it overestimates the VDEs of three anions dramatically by more than 1 eV. Therefore, the combined usage of several theoretical methods is important for the accuracy of purely theoretical prediction of superhalogen properties of new structures. Spatial distribution of the extra electron of high-VDE anions here indicates two features: remarkable aggregation on bridging CN units and non-negligible distribution on every CN unit. These two features lower the potential and kinetic energies of the extra electron respectively and thus lead to high VDE. Besides superhalogen properties, the structures, relative stabilities and thermodynamic stabilities with respect to detachment of CN-1 were also investigated for these anions. The collection of these results indicates that polynuclear structures based on pseudohalogen ligand are promising candidates for new superhalogens with enhanced properties.

Are polynuclear superhalogens without halogen atoms probable? A high-level ab initio case study on triple-bridged binuclear anions with cyanide ligands.

PubMed

Yin, Bing; Li, Teng; Li, Jin-Feng; Yu, Yang; Li, Jian-Li; Wen, Zhen-Yi; Jiang, Zhen-Yi

2014-03-07

The first theoretical exploration of superhalogen properties of polynuclear structures based on pseudohalogen ligand is reported here via a case study on eight triply-bridged [Mg2(CN)5](-) clusters. From our high-level ab initio results, all these clusters are superhalogens due to their high vertical electron detachment energies (VDE), of which the largest value is 8.67 eV at coupled-cluster single double triple (CCSD(T)) level. Although outer valence Green's function results are consistent with CCSD(T) in most cases, it overestimates the VDEs of three anions dramatically by more than 1 eV. Therefore, the combined usage of several theoretical methods is important for the accuracy of purely theoretical prediction of superhalogen properties of new structures. Spatial distribution of the extra electron of high-VDE anions here indicates two features: remarkable aggregation on bridging CN units and non-negligible distribution on every CN unit. These two features lower the potential and kinetic energies of the extra electron respectively and thus lead to high VDE. Besides superhalogen properties, the structures, relative stabilities and thermodynamic stabilities with respect to detachment of CN(-1) were also investigated for these anions. The collection of these results indicates that polynuclear structures based on pseudohalogen ligand are promising candidates for new superhalogens with enhanced properties.

Structural and electronic properties of AlN(0001) surface under partial N coverage as determined by ab initio approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strak, Pawel; Sakowski, Konrad; Kempisty, Pawel

2015-09-07

Properties of bare and nitrogen-covered Al-terminated AlN(0001) surface were determined using density functional theory (DFT) calculations. At a low nitrogen coverage, the Fermi level is pinned by Al broken bond states located below conduction band minimum. Adsorption of nitrogen is dissociative with an energy gain of 6.05 eV/molecule at a H3 site creating an overlap with states of three neighboring Al surface atoms. During this adsorption, electrons are transferred from Al broken bond to topmost N adatom states. Accompanying charge transfer depends on the Fermi level. In accordance with electron counting rule (ECR), the DFT results confirm the Fermi levelmore » is not pinned at the critical value of nitrogen coverage θ{sub N}(1) = 1/4 monolayer (ML), but it is shifted from an Al-broken bond state to Np{sub z} state. The equilibrium thermodynamic potential of nitrogen in vapor depends drastically on the Fermi level pinning being shifted by about 4 eV for an ECR state at 1/4 ML coverage. For coverage above 1/4 ML, adsorption is molecular with an energy gain of 1.5 eV at a skewed on-top position above an Al surface atom. Electronic states of the admolecule are occupied as in the free molecule, no electron transfer occurs and adsorption of a N{sub 2} molecule does not depend on the Fermi level. The equilibrium pressure of molecular nitrogen above an AlN(0001) surface depends critically on the Fermi level position, being very low and very high for low and high coverage, respectively. From this fact, one can conclude that at typical growth conditions, the Fermi level is not pinned, and the adsorption and incorporation of impurities depend on the position of Fermi level in the bulk.« less

Characterization of pi-Conjugated Polymers for Transistor and Photovoltaic Applications

NASA Astrophysics Data System (ADS)

Paulsen, Bryan D.

pi-Conjugated polymers represent a unique class of optoelectronic materials. Being polymers, they are solution processable and inherently "soft" materials. This makes them attractive candidates for the production of roll-to-roll printed electronic devices on flexible substrates. The optical and electronic properties of pi-conjugated polymers are synthetically tunable allowing material sets to be tailored to specific applications. Two of the most heavily researched applications are the thin film transistor, the building block of electronic circuits, and the bulk heterojunction solar cell, which holds great potential as a renewable energy source. Key to developing commercially feasible pi-conjugated polymer devices is a thorough understanding of the electronic structure and charge transport behavior of these materials in relationship with polymer structure. Here this structure property relationship has been investigated through electrical and electrochemical means in concert with a variety of other characterization techniques and device test beds. The tunability of polymer optical band gap and frontier molecular orbital energy level was investigated in systems of vinyl incorporating statistical copolymers. Energy levels and band gaps are crucial parameters in developing efficient photovoltaic devices, with control of these parameters being highly desirable. Additionally, charge transport and density of electronic states were investigated in pi-conjugated polymers at extremely high electrochemically induced charge density. Finally, the effects of molecular weight on pi-conjugated polymer optical properties, energy levels, charge transport, morphology, and photovoltaic device performance was examined.

Extended interaction oversized coaxial relativistic klystron amplifier with gigawatt-level output at Ka band

NASA Astrophysics Data System (ADS)

Li, Shifeng; Duan, Zhaoyun; Huang, Hua; Liu, Zhenbang; He, Hu; Wang, Fei; Wang, Zhanliang; Gong, Yubin

2018-04-01

In this paper, an extended interaction oversized coaxial relativistic klystron amplifier (EIOC-RKA) with Gigawatt-level output at Ka band is proposed. We introduce the oversized coaxial and multi-gap resonant cavities to increase the power capacity and investigate a non-uniform extended interaction output cavity to improve the electronic efficiency of the EIOC-RKA. We develop a high order mode gap in the input and output cavities to easily design and fabricate the input and output couplers. Meanwhile, we design the EIOC-RKA by using the particle-in-cell simulation. In the simulations, we use an electron beam with a current of 6 kA and a voltage of 525 kV, which is focused by a low focusing magnetic flux intensity of 0.5 T. The simulation results demonstrate that the saturated output power is 1.17 GW, the electronic efficiency is 37.1%, and the saturated gain is 57 dB at 30 GHz. The self-oscillation is suppressed by adopting the absorbing materials. The proposed EIOC-RKA has plenty of advantages such as large power capacity, high electronic efficiency, low focusing magnetic, high gain, and simple structure.

Role of electronic excited N2 in vibrational excitation of the N2 ground state at high latitudes

NASA Astrophysics Data System (ADS)

Campbell, L.; Cartwright, D. C.; Brunger, M. J.; Teubner, P. J. O.

2006-09-01

Vibrationally excited N2 is important in determining the ionospheric electron density and has also been proposed to play a role in the production of NO in disturbed atmospheres. We report here predictions of the absolute vibrational distributions in the ground electronic state of N2 produced by electron impact excitation, at noon and midnight under quiet geomagnetic conditions and disturbed conditions corresponding to the aurora IBCII+ and IBCIII+ at 60°N latitude and 0° longitude, at altitudes between 130 and 350 km. These predictions were obtained from a model which includes thermal excitation and direct electron impact excitation of the vibrational levels of the N2 ground state and its excited electronic states; radiative cascade from all excited electronic states to all vibrational levels of the ground electronic state; quenching by O, O2, and N2; molecular and ambipolar diffusion; and the dominant chemical reactions. Results from this study show that for both aurora and daytime electron environments: (1) cascade from the higher electronic states of N2 determines the population of the higher vibrational levels in the N2 ground state and (2) the effective ground state vibrational temperature for levels greater than 4 in N2 is predicted to be in the range 4000-13000 K for altitudes greater than 200 km. Correspondingly, the associated enhancement factor for the O+ reaction with vibrationally excited N2 to produce NO+ is predicted to increase with increasing altitude (up to a maximum at a height which increases with auroral strength) for both aurora and daytime environments and to increase with increasing auroral strength. The contribution of the cascade from the excited electronic states was evaluated and found to be relatively minor compared to the direct excitation process.

Electron Dynamics During High-Power, Short-Pulsed Laser Interactions with Solids and Interfaces

DTIC Science & Technology

2016-06-28

classified information, stamp classification level on the top and bottom of this page. 17. LIMITATION OF ABSTRACT. This block must be completed...mechanisms in thin gold films. Applied Physics Letters, 103(21):211910, 2013. 6) A. Giri, B. M. Foley, and P. E. Hopkins. Influence of hot electron...July 14 – 19, 2013. 7) Giri, A., Foley, B.M., Duda, J.C., Hopkins, P.E., “Influence of hot electron scattering on electron-phonon equilibrium in thin

SEDHI: a new generation of detection electronics for earth observation satellites

NASA Astrophysics Data System (ADS)

Dantes, Didier; Neveu, Claude; Biffi, Jean-Marc; Devilliers, Christophe; Andre, Serge

2017-11-01

Future earth observation optical systems will be more and more demanding in terms of ground sampling distance, swath width, number of spectral bands, duty cycle. Existing architectures of focal planes and video processing electronics are hardly compatible with these new requirements: electronic functions are split in several units, and video processing is limited to frequencies around 5 MHz in order to fulfil the radiometric requirements expected for high performance image quality systems. This frequency limitation induces a high number of video chains operated in parallel to process the huge amount of pixels at focal plane output, and leads to unacceptable mass and power consumption budgets. Furthermore, splitting the detection electronics functions into several units (at least one for the focal plane and proximity electronics, and one for the video processing functions) does not optimise the production costs : specific development efforts must be performed on critical analogue electronics at each equipment level and operations of assembly, integration and tests are duplicated at equipment and subsystem levels. Alcatel Space Industries has proposed to CNES a new concept of highly integrated detection electronics (SEDHI), and is developing for CNES a breadboard which will allow to confirm its potentialities. This paper presents the trade-off study which have been performed before selection of this new concept and summarises the main advantages and drawbacks of each possible architecture. The electrical, mechanical and thermal aspects of the SEDHI concept are described, including the basic technologies : ASIC for phase shift of detector clocks, ASIC for video processing, hybrids, microchip module... The adaptability to a large amount of missions and optical instruments is also discussed.

The CMS electron and photon trigger for the LHC Run 2

NASA Astrophysics Data System (ADS)

Dezoort, Gage; Xia, Fan

2017-01-01

The CMS experiment implements a sophisticated two-level triggering system composed of Level-1, instrumented by custom-design hardware boards, and a software High-Level-Trigger. A new Level-1 trigger architecture with improved performance is now being used to maintain the thresholds that were used in LHC Run I for the more challenging luminosity conditions experienced during Run II. The upgrades to the calorimetry trigger will be described along with performance data. The algorithms for the selection of final states with electrons and photons, both for precision measurements and for searches of new physics beyond the Standard Model, will be described in detail.

Radiation-Hardened Electronics for Advanced Communications Systems

NASA Technical Reports Server (NTRS)

Whitaker, Sterling

2015-01-01

Novel approach enables high-speed special-purpose processors Advanced reconfigurable and reprogrammable communication systems will require sub-130-nanometer electronics. Legacy single event upset (SEU) radiation-tolerant circuits are ineffective at speeds greater than 125 megahertz. In Phase I of this project, ICs, LLC, demonstrated new base-level logic circuits that provide SEU immunity for sub-130-nanometer high-speed circuits. In Phase II, the company developed an innovative self-restoring logic (SRL) circuit and a system approach that provides high-speed, SEU-tolerant solutions that are effective for sub-130-nanometer electronics scalable to at least 22-nanometer processes. The SRL system can be used in the design of NASA's next-generation special-purpose processors, especially reconfigurable communication processors.

10 CFR 2.1006 - Privilege.

Code of Federal Regulations, 2011 CFR

2011-01-01

... to Proceedings for the Issuance of Licenses for the Receipt of High-Level Radioactive Waste at a...-License Application Presiding Officer or the Presiding Officer, must be provided in electronic form by the... provided for electronic access pursuant to § 2.1003(a). [63 FR 71738, Dec. 30, 1998; 64 FR 15920, Apr. 2...

10 CFR 2.1006 - Privilege.

Code of Federal Regulations, 2010 CFR

2010-01-01

... to Proceedings for the Issuance of Licenses for the Receipt of High-Level Radioactive Waste at a...-License Application Presiding Officer or the Presiding Officer, must be provided in electronic form by the... provided for electronic access pursuant to § 2.1003(a). [63 FR 71738, Dec. 30, 1998; 64 FR 15920, Apr. 2...

10 CFR 2.1019 - Depositions.

Code of Federal Regulations, 2012 CFR

2012-01-01

... Applicable to Proceedings for the Issuance of Licenses for the Receipt of High-Level Radioactive Waste at a... the failure to sign, and shall promptly transmit an electronic copy of the deposition to the Secretary of the Commission for entry into the electronic docket. (e) Where the deposition is to be taken on...

10 CFR 2.1019 - Depositions.

Code of Federal Regulations, 2014 CFR

2014-01-01

... Issuance of Licenses for the Receipt of High-Level Radioactive Waste at a Geologic Repository § 2.1019... the failure to sign, and shall promptly transmit an electronic copy of the deposition to the Secretary of the Commission for entry into the electronic docket. (e) Where the deposition is to be taken on...

10 CFR 2.1004 - Amendments and additions.

Code of Federal Regulations, 2012 CFR

2012-01-01

... Waste at a Geologic Repository § 2.1004 Amendments and additions. Any document that has not been provided to other parties in electronic form must be identified in an electronic notice and made available... for the high-level waste proceeding. The time allowed under this paragraph will be stayed pending...

10 CFR 2.1019 - Depositions.

Code of Federal Regulations, 2013 CFR

2013-01-01

... Issuance of Licenses for the Receipt of High-Level Radioactive Waste at a Geologic Repository § 2.1019... the failure to sign, and shall promptly transmit an electronic copy of the deposition to the Secretary of the Commission for entry into the electronic docket. (e) Where the deposition is to be taken on...

10 CFR 2.1004 - Amendments and additions.

Code of Federal Regulations, 2011 CFR

2011-01-01

... Waste at a Geologic Repository § 2.1004 Amendments and additions. Any document that has not been provided to other parties in electronic form must be identified in an electronic notice and made available... for the high-level waste proceeding. The time allowed under this paragraph will be stayed pending...

10 CFR 2.1007 - Access.

Code of Federal Regulations, 2014 CFR

2014-01-01

... Licenses for the Receipt of High-Level Radioactive Waste at a Geologic Repository § 2.1007 Access. (a)(1) A system to provide electronic access to the Licensing Support Network shall be provided at the... provide electronic access to the Licensing Support Network shall be provided at the NRC Web site, http...

10 CFR 2.1007 - Access.

Code of Federal Regulations, 2013 CFR

2013-01-01

... Licenses for the Receipt of High-Level Radioactive Waste at a Geologic Repository § 2.1007 Access. (a)(1) A system to provide electronic access to the Licensing Support Network shall be provided at the... provide electronic access to the Licensing Support Network shall be provided at the NRC Web site, http...

10 CFR 2.1006 - Privilege.

Code of Federal Regulations, 2012 CFR

2012-01-01

... to Proceedings for the Issuance of Licenses for the Receipt of High-Level Radioactive Waste at a...-License Application Presiding Officer or the Presiding Officer, must be provided in electronic form by the... provided for electronic access pursuant to § 2.1003(a). [63 FR 71738, Dec. 30, 1998; 64 FR 15920, Apr. 2...

10 CFR 2.1004 - Amendments and additions.

Code of Federal Regulations, 2010 CFR

2010-01-01

... Waste at a Geologic Repository § 2.1004 Amendments and additions. Any document that has not been provided to other parties in electronic form must be identified in an electronic notice and made available... for the high-level waste proceeding. The time allowed under this paragraph will be stayed pending...

Curriculum Guide for Electricity-Electronics.

ERIC Educational Resources Information Center

Oregon State Board of Education, Salem. Div. of Community Colleges and Career Education.

Developed through a cooperative effort by industry and education, this curriculum guide outlines the basic skills and knowledge necessary for entry-level competencies in the broad field of electricity-electronics, or for entrance into an apprenticeship, post-high school, or university program. This guide is one of several developed for Oregon's…

Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duc, Tran Thien; School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi; Pozina, Galia

2016-03-07

Development of high performance GaN-based devices is strongly dependent on the possibility to control and understand defects in material. Important information about deep level defects is obtained by deep level transient spectroscopy and minority carrier transient spectroscopy on as-grown and electron irradiated n-type bulk GaN with low threading dislocation density produced by halide vapor phase epitaxy. One hole trap labelled H1 (E{sub V} + 0.34 eV) has been detected on as-grown GaN sample. After 2 MeV electron irradiation, the concentration of H1 increases and at fluences higher than 5 × 10{sup 14 }cm{sup −2}, a second hole trap labelled H2 is observed. Simultaneously, the concentration of twomore » electron traps, labelled T1 (E{sub C} – 0.12 eV) and T2 (E{sub C} – 0.23 eV), increases. By studying the increase of the defect concentration versus electron irradiation fluence, the introduction rate of T1 and T2 using 2 MeV- electrons was determined to be 7 × 10{sup −3 }cm{sup −1} and 0.9 cm{sup −1}, respectively. Due to the low introduction rate of T1, it is suggested that the defect is associated with a complex. The high introduction rate of trap H1 and T2 suggests that the defects are associated with primary intrinsic defects or complexes. Some deep levels previously observed in irradiated GaN layers with higher threading dislocation densities are not detected in present investigation. It is therefore suggested that the absent traps may be related to primary defects segregated around dislocations.« less

Packaging Technologies for 500 C SiC Electronics and Sensors: Challenges in Material Science and Technology

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Neudeck, Philip G.; Behelm, Glenn M.; Spry, David J.; Meredith, Roger D.; Hunter, Gary W.

2015-01-01

This paper presents ceramic substrates and thick-film metallization based packaging technologies in development for 500C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550C. The 96 alumina packaging system composed of chip-level packages and PCBs has been successfully tested with high temperature SiC discrete transistor devices at 500C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC junction field-effect-transistor (JFET) with a packaging system composed of a 96 alumina chip-level package and an alumina printed circuit board was tested on low earth orbit for eighteen months via a NASA International Space Station experiment. In addition to packaging systems for electronics, a spark-plug type sensor package based on this high temperature interconnection system for high temperature SiC capacitive pressure sensors was also developed and tested. In order to further significantly improve the performance of packaging system for higher packaging density, higher operation frequency, power rating, and even higher temperatures, some fundamental material challenges must be addressed. This presentation will discuss previous development and some of the challenges in material science (technology) to improve high temperature dielectrics for packaging applications.

A General Sparse Tensor Framework for Electronic Structure Theory

DOE PAGES

Manzer, Samuel; Epifanovsky, Evgeny; Krylov, Anna I.; ...

2017-01-24

Linear-scaling algorithms must be developed in order to extend the domain of applicability of electronic structure theory to molecules of any desired size. But, the increasing complexity of modern linear-scaling methods makes code development and maintenance a significant challenge. A major contributor to this difficulty is the lack of robust software abstractions for handling block-sparse tensor operations. We therefore report the development of a highly efficient symbolic block-sparse tensor library in order to provide access to high-level software constructs to treat such problems. Our implementation supports arbitrary multi-dimensional sparsity in all input and output tensors. We then avoid cumbersome machine-generatedmore » code by implementing all functionality as a high-level symbolic C++ language library and demonstrate that our implementation attains very high performance for linear-scaling sparse tensor contractions.« less

On the possibility of developing quasi-CW high-power high-pressure laser on 4p-4s transition of ArI with electron beam—optical pumping: quenching of 4s (3P2) lower laser level

NASA Astrophysics Data System (ADS)

Ionin, A. A.; Kholin, I. V.; L'dov, A. Yu; Seleznev, L. V.; Ustinovskii, N. N.; Zayarnyi, D. A.

2017-12-01

A new electron beam-optical procedure is proposed for quasi-cw pumping of high-pressure large-volume He-Ar laser on the 4p[1/2]1-4s[3/2]20 argon atom transition at the wavelength of 912.5 nm. It consists of creation and maintenance of a necessary density of the 4s[3/2]20 metastable state in the gain medium by a fast electron beam and subsequent optical pumping of the upper laser level via the classical three-level scheme using a laser diode. Absorption probing is used to study collisional quenching of Ar* metastable in electron-beam-excited high-pressure He-Ar mixtures with a low content of argon. The rate constants for plasma-chemical reactions Ar*  +  He  +  Ar  >  Ar2*   +  He (3.6  ±  0.4)  ×  10-33 cm6 s-1, Ar*  +  2He  >  HeAr*  +  He (4.4  ±  0.9)  ×  10-36 cm6 s-1 and Ar*  +  He  >  Products  +  He (2.4  ±  0.3)  ×  10-15 cm3 s-1 were for the first time measured.

Investigation of energy transport in DIII-D high- β P EAST-demonstration discharges with the TGLF turbulent and NEO neoclassical transport models [Investigation of energy transport in DIII-D high- β P EAST-demonstration discharges with turbulent and neoclassical transport models

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, Chengkang; Staebler, Gary M.; Lao, Lang L.

Here, energy transport analyses of DIII-D high-β P EAST-demonstration discharges have been performed using the TGYRO transport package with TGLF turbulent and NEO neoclassical transport models under the OMFIT integrated modeling framework. Ion energy transport is shown to be dominated by neoclassical transport and ion temperature profiles predicted by TGYRO agree closely with the experimental measured profiles for these high-β P discharges. Ion energy transport is largely insensitive to reductions in the E × B flow shear stabilization. The Shafranov shift is shown to play a role in the suppression of the ion turbulent energy transport below the neoclassical level.more » Electron turbulent energy transport is under-predicted by TGLF and a significant shortfall in the electron energy transport over the whole core plasma is found with TGLF predictions for these high-β P discharges. TGYRO can successfully predict the experimental ion and electron temperature profiles by artificially increasing the saturated turbulence level for ETG driven modes used in TGLF.« less

Investigation of energy transport in DIII-D high- β P EAST-demonstration discharges with the TGLF turbulent and NEO neoclassical transport models [Investigation of energy transport in DIII-D high- β P EAST-demonstration discharges with turbulent and neoclassical transport models

DOE PAGES

Pan, Chengkang; Staebler, Gary M.; Lao, Lang L.; ...

2017-01-11

Here, energy transport analyses of DIII-D high-β P EAST-demonstration discharges have been performed using the TGYRO transport package with TGLF turbulent and NEO neoclassical transport models under the OMFIT integrated modeling framework. Ion energy transport is shown to be dominated by neoclassical transport and ion temperature profiles predicted by TGYRO agree closely with the experimental measured profiles for these high-β P discharges. Ion energy transport is largely insensitive to reductions in the E × B flow shear stabilization. The Shafranov shift is shown to play a role in the suppression of the ion turbulent energy transport below the neoclassical level.more » Electron turbulent energy transport is under-predicted by TGLF and a significant shortfall in the electron energy transport over the whole core plasma is found with TGLF predictions for these high-β P discharges. TGYRO can successfully predict the experimental ion and electron temperature profiles by artificially increasing the saturated turbulence level for ETG driven modes used in TGLF.« less

Selective p-i-n photodetector with resonant tunneling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mil'shtein, S.; Wilson, S.; Pillai, A.

2014-05-15

There are different fundamental approaches to designing selective photodetectors, where the selectivity of optical spectra is produced by a filtering aperture. However, manufacturing of multilayered filters is cumbersome for epitaxial technology. In the current study, we offer a novel approach in design of selective photodetectors. A p-i-n photodetector with superlattices in top n-layer becomes transparent for photons where hν<>E{sub ng}+E{sub n1}, the light will be absorbed, simultaneously producing high energy (hot) electrons. The designed thickness of the structure does prevent thermal relaxation of high energy electrons by thus enhancing the selectivity of the photodetector. However the most important selectivity elementmore » is the resonant tunneling which does happen only for electrons occupying E{sub n1} energy levels as they transfer to levels E{sub i1}aligned under reverse biasing.« less

Highly Charged Rydberg Ions from the Coulomb Explosion of Clusters

NASA Astrophysics Data System (ADS)

Komar, D.; Kazak, L.; Almassarani, M.; Meiwes-Broer, K.-H.; Tiggesbäumker, J.

2018-03-01

Ion emission from a nanoplasma produced in the interaction of intense optical laser pulses with argon clusters is studied resolving simultaneously charge states and recoil energies. By applying appropriate static electric fields we observe that a significant fraction of the ions Arq + (q =1 - 7 ) has electrons with binding energies lower than 150 meV; i.e., nRyd≥15 levels are populated. Charge state changes observed on a μ s time scale can be attributed to electron emission due to autoionizing Rydberg states, indicating that high-ℓ Rydberg levels are populated as well. The experiments support theoretical predictions that a significant fraction of delocalized electrons, which are bound with hundreds of eV to the nanoplasma after the laser exposure, fill up meV bound ion states in the adiabatic expansion. We expect the process to be relevant for the long-term evolution of expanding laser-induced dense plasmas in general.

Patching the Exchange-Correlation Potential in Density Functional Theory.

PubMed

Huang, Chen

2016-05-10

A method for directly patching exchange-correlation (XC) potentials in materials is derived. The electron density of a system is partitioned into subsystem densities by dividing its Kohn-Sham (KS) potential among the subsystems. Inside each subsystem, its projected KS potential is required to become the total system's KS potential. This requirement, together with the nearsightedness principle of electronic matters, ensures that the electronic structures inside subsystems can be good approximations to the total system's electronic structure. The nearsightedness principle also ensures that subsystem densities could be well localized in their regions, making it possible to use high-level methods to invert the XC potentials for subsystem densities. Two XC patching methods are developed. In the local XC patching method, the total system's XC potential is improved in the cluster region. We show that the coupling between a cluster and its environment is important for achieving a fast convergence of the electronic structure in the cluster region. In the global XC patching method, we discuss how to patch the subsystem XC potentials to construct the XC potential in the total system, aiming to scale up high-level quantum mechanics simulations of materials. Proof-of-principle examples are given.

Multistage Coupling of Laser-Wakefield Accelerators with Curved Plasma Channels.

PubMed

Luo, J; Chen, M; Wu, W Y; Weng, S M; Sheng, Z M; Schroeder, C B; Jaroszynski, D A; Esarey, E; Leemans, W P; Mori, W B; Zhang, J

2018-04-13

Multistage coupling of laser-wakefield accelerators is essential to overcome laser energy depletion for high-energy applications such as TeV-level electron-positron colliders. Current staging schemes feed subsequent laser pulses into stages using plasma mirrors while controlling electron beam focusing with plasma lenses. Here a more compact and efficient scheme is proposed to realize the simultaneous coupling of the electron beam and the laser pulse into a second stage. A partly curved channel, integrating a straight acceleration stage with a curved transition segment, is used to guide a fresh laser pulse into a subsequent straight channel, while the electrons continue straight. This scheme benefits from a shorter coupling distance and continuous guiding of the electrons in plasma while suppressing transverse beam dispersion. Particle-in-cell simulations demonstrate that the electron beam from a previous stage can be efficiently injected into a subsequent stage for further acceleration while maintaining high capture efficiency, stability, and beam quality.

Multistage Coupling of Laser-Wakefield Accelerators with Curved Plasma Channels

NASA Astrophysics Data System (ADS)

Luo, J.; Chen, M.; Wu, W. Y.; Weng, S. M.; Sheng, Z. M.; Schroeder, C. B.; Jaroszynski, D. A.; Esarey, E.; Leemans, W. P.; Mori, W. B.; Zhang, J.

2018-04-01

Multistage coupling of laser-wakefield accelerators is essential to overcome laser energy depletion for high-energy applications such as TeV-level electron-positron colliders. Current staging schemes feed subsequent laser pulses into stages using plasma mirrors while controlling electron beam focusing with plasma lenses. Here a more compact and efficient scheme is proposed to realize the simultaneous coupling of the electron beam and the laser pulse into a second stage. A partly curved channel, integrating a straight acceleration stage with a curved transition segment, is used to guide a fresh laser pulse into a subsequent straight channel, while the electrons continue straight. This scheme benefits from a shorter coupling distance and continuous guiding of the electrons in plasma while suppressing transverse beam dispersion. Particle-in-cell simulations demonstrate that the electron beam from a previous stage can be efficiently injected into a subsequent stage for further acceleration while maintaining high capture efficiency, stability, and beam quality.

Photosynthesis and Photosynthetic Electron Flow in the Alpine Evergreen Species Quercus guyavifolia in Winter

PubMed Central

Huang, Wei; Hu, Hong; Zhang, Shi-Bao

2016-01-01

Alpine evergreen broadleaf tree species must regularly cope with low night temperatures in winter. However, the effects of low night temperatures on photosynthesis in alpine evergreen broadleaf tree species are unclear. We measured the diurnal photosynthetic parameters before and after cold snap for leaves of Quercus guyavifolia growing in its native habitat at 3290 m. On 11 and 12 December 2013 (before cold snap), stomatal and mesophyll conductances (gs and gm), CO2 assimilation rate (An), and total electron flow through PSII (JPSII) at daytime were maintained at high levels. The major action of alternative electron flow was to provide extra ATP for primary metabolisms. On 20 December 2013 (after cold snap), the diurnal values of gs, gm, An, and JPSII at daytime largely decreased, mainly due to the large decrease in night air temperature. Meanwhile, the ratio of photorespiration and alternative electron flow to JPSII largely increased on 20 December. Furthermore, the high levels of alternative electron flow were accompanied with low rates of extra ATP production. A quantitative limitation analysis reveals that the gm limitation increased on 20 December with decreased night air temperature. Therefore, the night air temperature was an important determinant of stomatal/mesophyll conductance and photosynthesis. When photosynthesis is inhibited following freezing night temperatures, photorespiration and alternative electron flow are important electron sinks, which support the role of photorespiration and alternative electron flow in photoportection for alpine plants under low temperatures. PMID:27812359

Giga-electronvolt electrons due to a transition from laser wakefield acceleration to plasma wakefield acceleration

NASA Astrophysics Data System (ADS)

Masson-Laborde, P. E.; Mo, M. Z.; Ali, A.; Fourmaux, S.; Lassonde, P.; Kieffer, J. C.; Rozmus, W.; Teychenné, D.; Fedosejevs, R.

2014-12-01

We show through experiments that a transition from laser wakefield acceleration (LWFA) regime to a plasma wakefield acceleration (PWFA) regime can drive electrons up to energies close to the GeV level. Initially, the acceleration mechanism is dominated by the bubble created by the laser in the nonlinear regime of LWFA, leading to an injection of a large number of electrons. After propagation beyond the depletion length, leading to a depletion of the laser pulse, whose transverse ponderomotive force is not able to sustain the bubble anymore, the high energy dense bunch of electrons propagating inside bubble will drive its own wakefield by a PWFA regime. This wakefield will be able to trap and accelerate a population of electrons up to the GeV level during this second stage. Three dimensional particle-in-cell simulations support this analysis and confirm the scenario.

Giga-electronvolt electrons due to a transition from laser wakefield acceleration to plasma wakefield acceleration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Masson-Laborde, P. E., E-mail: paul-edouard.masson-laborde@cea.fr; Teychenné, D.; Mo, M. Z.

2014-12-15

We show through experiments that a transition from laser wakefield acceleration (LWFA) regime to a plasma wakefield acceleration (PWFA) regime can drive electrons up to energies close to the GeV level. Initially, the acceleration mechanism is dominated by the bubble created by the laser in the nonlinear regime of LWFA, leading to an injection of a large number of electrons. After propagation beyond the depletion length, leading to a depletion of the laser pulse, whose transverse ponderomotive force is not able to sustain the bubble anymore, the high energy dense bunch of electrons propagating inside bubble will drive its ownmore » wakefield by a PWFA regime. This wakefield will be able to trap and accelerate a population of electrons up to the GeV level during this second stage. Three dimensional particle-in-cell simulations support this analysis and confirm the scenario.« less

Instrumental requirements for the detection of electron beam-induced object excitations at the single atom level in high-resolution transmission electron microscopy.

PubMed

Kisielowski, C; Specht, P; Gygax, S M; Barton, B; Calderon, H A; Kang, J H; Cieslinski, R

2015-01-01

This contribution touches on essential requirements for instrument stability and resolution that allows operating advanced electron microscopes at the edge to technological capabilities. They enable the detection of single atoms and their dynamic behavior on a length scale of picometers in real time. It is understood that the observed atom dynamic is intimately linked to the relaxation and thermalization of electron beam-induced sample excitation. Resulting contrast fluctuations are beam current dependent and largely contribute to a contrast mismatch between experiments and theory if not considered. If explored, they open the possibility to study functional behavior of nanocrystals and single molecules at the atomic level in real time. Copyright © 2014 Elsevier Ltd. All rights reserved.

Echo 2 - Observations at Fort Churchill of a 4-keV peak in low-level electron precipitation

NASA Technical Reports Server (NTRS)

Arnoldy, R. L.; Hendrickson, R. A.; Winckler, J. R.

1975-01-01

The Echo 2 rocket flight launched from Fort Churchill, Manitoba, offered the opportunity to observe high-latitude low-level electron precipitation during quiet magnetic conditions. Although no visual aurora was evident at the time of the flight, an auroral spectrum sharply peaked at a few keV was observed to have intensities from 1 to 2 orders of magnitude lower than peaked spectra typically associated with bright auroral forms. There is a growing body of evidence that relates peaked electron spectra to discrete aurora. The Echo 2 observations show that whatever the mechanism for peaking the electron spectrum in and above discrete forms, it operates over a range of precipitation intensities covering nearly 3 orders of magnitude down to subvisual or near subvisual events.

On the Ground Electronic States of TiF and TiCl

PubMed

Boldyrev; Simons

1998-04-01

The low-lying electronic states of TiF and TiCl have been studied using high level ab initio techniques. Both are found to have two low-lying excited electronic states, 4Sigma- (0.080 eV (TiF) and 0.236 eV (TiCl)) and 2Delta (0.266 eV (TiF) and 0.348 eV (TiCl)), and 4Phi ground states at the highest CCSD(T)/6-311++G(2d,2f) level of theory. Our theoretical predictions of 4Phi ground electronic states for TiF and TiCl support recent experimental findings by Ram and Bernath, and our calculated bond lengths and vibrational frequencies are in reasonable agreement with their experimental data. Copyright 1998 Academic Press.

MIMIC-compatible GaAs and InP field effect controlled transferred electron (FECTED) oscillators

NASA Astrophysics Data System (ADS)

Scheiber, Helmut; Luebke, Kurt; Diskus, Christian G.; Thim, Hartwig W.; Gruetzmacher, D.

1989-12-01

A MIMIC-(millimeter and microwave integrated circuit) compatible transferred electron oscillator is investigated which utilizes the frequency-independent negative resistance of the stationary charge dipole domain that forms in the channel of a MESFET. The device structure, analysis, and simulation are described. Devices fabricated from GaAs and InP exhibit very high power levels of 56 mW at 29 GHz and 55 mW at 34 GHz, respectively. Continuous wave power levels are somewhat lower (30 mW).

A Motor Drive Electronics Assembly for Mars Curiosity Rover: An Example of Assembly Qualification for Extreme Environments

NASA Technical Reports Server (NTRS)

Kolawa, Elizabeth; Chen, Yuan; Mojarradi, Mohammad M.; Weber, Carissa Tudryn; Hunter, Don J.

2013-01-01

This paper describes the technology development and infusion of a motor drive electronics assembly for Mars Curiosity Rover under space extreme environments. The technology evaluation and qualification as well as space qualification of the assembly are detailed and summarized. Because of the uncertainty of the technologies operating under the extreme space environments and that a high level reliability was required for this assembly application, both component and assembly board level qualifications were performed.

Kinetics of highly vibrationally excited O2(X) molecules in inductively-coupled oxygen plasmas

NASA Astrophysics Data System (ADS)

Annušová, Adriana; Marinov, Daniil; Booth, Jean-Paul; Sirse, Nishant; Lino da Silva, Mário; Lopez, Bruno; Guerra, Vasco

2018-04-01

The high degree of vibrational excitation of O2 ground state molecules recently observed in inductively coupled plasma discharges is investigated experimentally in more detail and interpreted using a detailed self-consistent 0D global kinetic model for oxygen plasmas. Additional experimental results are presented and used to validate the model. The vibrational kinetics considers vibrational levels up to v = 41 and accounts for electron impact excitation and de-excitation (e-V), vibration-to-translation relaxation (V-T) in collisions with O2 molecules and O atoms, vibration-to-vibration energy exchanges (V-V), excitation of electronically excited states, dissociative electron attachment, and electron impact dissociation. Measurements were performed at pressures of 10–80 mTorr (1.33 and 10.67 Pa) and radio frequency (13.56 MHz) powers up to 500 W. The simulation results are compared with the absolute densities in each O2 vibrational level obtained by high sensitivity absorption spectroscopy measurements of the Schumann–Runge bands for O2(X, v = 4–18), O(3 P) atom density measurements by two-photon absorption laser induced fluorescence (TALIF) calibrated against Xe, and laser photodetachment measurements of the O‑ negative ions. The highly excited O2(X, v) distribution exhibits a shape similar to a Treanor-Gordiets distribution, but its origin lies in electron impact e-V collisions and not in V-V up-pumping, in contrast to what happens in all other molecular gases known to date. The relaxation of vibrational quanta is mainly due to V-T energy-transfer collisions with O atoms and to electron impact dissociation of vibrationally excited molecules, e+O2(X, v)→O(3P)+O(3P).

Electronic couplings for molecular charge transfer: Benchmarking CDFT, FODFT, and FODFTB against high-level ab initio calculations

NASA Astrophysics Data System (ADS)

Kubas, Adam; Hoffmann, Felix; Heck, Alexander; Oberhofer, Harald; Elstner, Marcus; Blumberger, Jochen

2014-03-01

We introduce a database (HAB11) of electronic coupling matrix elements (Hab) for electron transfer in 11 π-conjugated organic homo-dimer cations. High-level ab inito calculations at the multireference configuration interaction MRCI+Q level of theory, n-electron valence state perturbation theory NEVPT2, and (spin-component scaled) approximate coupled cluster model (SCS)-CC2 are reported for this database to assess the performance of three DFT methods of decreasing computational cost, including constrained density functional theory (CDFT), fragment-orbital DFT (FODFT), and self-consistent charge density functional tight-binding (FODFTB). We find that the CDFT approach in combination with a modified PBE functional containing 50% Hartree-Fock exchange gives best results for absolute Hab values (mean relative unsigned error = 5.3%) and exponential distance decay constants β (4.3%). CDFT in combination with pure PBE overestimates couplings by 38.7% due to a too diffuse excess charge distribution, whereas the economic FODFT and highly cost-effective FODFTB methods underestimate couplings by 37.6% and 42.4%, respectively, due to neglect of interaction between donor and acceptor. The errors are systematic, however, and can be significantly reduced by applying a uniform scaling factor for each method. Applications to dimers outside the database, specifically rotated thiophene dimers and larger acenes up to pentacene, suggests that the same scaling procedure significantly improves the FODFT and FODFTB results for larger π-conjugated systems relevant to organic semiconductors and DNA.

Ultrafast electron microscopy: Instrument response from the single-electron to high bunch-charge regimes

NASA Astrophysics Data System (ADS)

Plemmons, Dayne A.; Flannigan, David J.

2017-09-01

We determine the instrument response of an ultrafast electron microscope equipped with a conventional thermionic electron gun and absent modifications beyond the optical ports. Using flat, graphite-encircled LaB6 cathodes, we image space-charge effects as a function of photoelectron-packet population and find that an applied Wehnelt bias has a negligible effect on the threshold levels (>103 electrons per pulse) but does appear to suppress blurring at the upper limits (∼105 electrons). Using plasma lensing, we determine the instrument-response time for 700-fs laser pulses and find that single-electron packets are laser limited (1 ps), while broadening occurs well below the space-charge limit.

High resolution photoemission investigation: The oxidation of W

NASA Astrophysics Data System (ADS)

Morar, J. F.; Himpsel, F. J.; Hughes, G. J.; Jordan, J. L.; McFeely, F. R.; Hollinge, G.

High resolution photoemission measurements of surface oxide layers on tungsten has revealed a set of well resolved core level shifts characteristic of individual metal oxidation states. Measurement and analysis of this type of data can provide specific and quantitative chemical information about surface oxides. The formation of bonds between transition metals and strongly electronegative elements such as oxygen and fluorine results in charge transfer with the effect of shifting the metal core electron binding energies. The magnitude of such shifts depends primarily on two factors; the amount of charge transfer and the screening ability of the metals electrons. The size of core-level shifts tend to increase with additional charge transfer and be decreased by screening. In the case of tungsten the amount of screening should be a function of oxygen content since the oxygen ties up free electrons which are effective at screening. A continuous change in the tungsten core level shifts is observed with increasing oxygen content, i.e., as the screening changes from that characteristic of a metal screened to that characteristic of an insulator unscreened.

Prediction of high-energy radiation belt electron fluxes using a combined VERB-NARMAX model

NASA Astrophysics Data System (ADS)

Pakhotin, I. P.; Balikhin, M. A.; Shprits, Y.; Subbotin, D.; Boynton, R.

2013-12-01

This study is concerned with the modelling and forecasting of energetic electron fluxes that endanger satellites in space. By combining data-driven predictions from the NARMAX methodology with the physics-based VERB code, it becomes possible to predict electron fluxes with a high level of accuracy and across a radial distance from inside the local acceleration region to out beyond geosynchronous orbit. The model coupling also makes is possible to avoid accounting for seed electron variations at the outer boundary. Conversely, combining a convection code with the VERB and NARMAX models has the potential to provide even greater accuracy in forecasting that is not limited to geostationary orbit but makes predictions across the entire outer radiation belt region.

Electromagnetic malfunction of semiconductor-type electronic personal dosimeters caused by access control systems for radiation facilities.

PubMed

Deji, Shizuhiko; Ito, Shigeki; Ariga, Eiji; Mori, Kazuyuki; Hirota, Masahiro; Saze, Takuya; Nishizawa, Kunihide

2006-08-01

High frequency electromagnetic fields in the 120 kHz band emitted from card readers for access control systems in radiation control areas cause abnormally high and erroneous indicated dose readings on semiconductor-type electronic personal dosimeters (SEPDs). All SEPDs malfunctioned but recovered their normal performance by resetting after the exposure ceased. The minimum distances required to prevent electromagnetic interference varied from 5.0 to 38.0 cm. The electric and magnetic immunity levels ranged from 35.1 to 267.6 V m(-1) and from 1.0 to 16.6 A m(-1), respectively. Electromagnetic immunity levels of SEPDs should be strengthened from the standpoint of radiation protection.

Energy level alignment in TiO2/metal sulfide/polymer interfaces for solar cell applications.

PubMed

Lindblad, Rebecka; Cappel, Ute B; O'Mahony, Flannan T F; Siegbahn, Hans; Johansson, Erik M J; Haque, Saif A; Rensmo, Håkan

2014-08-28

Semiconductor sensitized solar cell interfaces have been studied with photoelectron spectroscopy to understand the interfacial electronic structures. In particular, the experimental energy level alignment has been determined for complete TiO2/metal sulfide/polymer interfaces. For the metal sulfides CdS, Sb2S3 and Bi2S3 deposited from single source metal xanthate precursors, it was shown that both driving forces for electron injection into TiO2 and hole transfer to the polymer decrease for narrower bandgaps. The energy level alignment results were used in the discussion of the function of solar cells with the same metal sulfides as light absorbers. For example Sb2S3 showed the most favourable energy level alignment with 0.3 eV driving force for electron injection and 0.4 eV driving force for hole transfer and also the most efficient solar cells due to high photocurrent generation. The energy level alignment of the TiO2/Bi2S3 interface on the other hand showed no driving force for electron injection to TiO2, and the performance of the corresponding solar cell was very low.

Plasmon modes of bilayer molybdenum disulfide: a density functional study

NASA Astrophysics Data System (ADS)

Torbatian, Z.; Asgari, R.

2017-11-01

We explore the collective electronic excitations of bilayer molybdenum disulfide (MoS2) using density functional theory together with random phase approximation. The many-body dielectric function and electron energy-loss spectra are calculated using an ab initio based model involving material-realistic physical properties. The electron energy-loss function of the bilayer MoS2 system is found to be sensitive to either electron or hole doping and this is due to the fact that the Kohn-Sham band dispersions are not symmetric for energies above and below the zero Fermi level. Three plasmon modes are predicted, a damped high-energy mode, one optical mode (in-phase mode) for which the plasmon dispersion exhibits \\sqrt q in the long wavelength limit originating from low-energy electron scattering and finally a highly damped acoustic mode (out-of-phase mode).

Imaging of the outer valence orbitals of CO by electron momentum spectroscopy — Comparison with high level MRSD-CI and DFT calculations

NASA Astrophysics Data System (ADS)

Fan, X. W.; Chen, X. J.; Zhou, S. J.; Zheng, Y.; Brion, C. E.; Frey, R.; Davidson, E. R.

1997-09-01

A newly constructed energy dispersive multichannel electron momentum spectrometer has been used to image the electron density of the outer valence orbitals of CO with high precision. Binding energy spectra are obtained at a coincidence energy resolution of 1.2 eV fwhm. The measured electron density profiles in momentum space for the outer valence orbitals of CO are compared with cross sections calculated using SCF wavefunctions with basis sets of varying complexity up to near-Hartree-Fock limit in quality. The effects of correlation and electronic relaxation on the calculated momentum profiles are investigated using large MRSD-CI calculations of the full ion-neutral overlap distributions, as well as large basis set DFT calculations with local and non-local (gradient corrected) functionals.

Using Adobe Flash animations of electron transport chain to teach and learn biochemistry.

PubMed

Teplá, Milada; Klímová, Helena

2015-01-01

Teaching the subject of the electron transport chain is one of the most challenging aspects of the chemistry curriculum at the high school level. This article presents an educational program called "Electron Transport Chain" which consists of 14 visual animations including a biochemistry quiz. The program was created in the Adobe Flash CS3 Professional animation program and is designed for high school chemistry students. Our goal is to develop educational materials that facilitate the comprehension of this complex subject through dynamic animations which show the course of the electron transport chain and simultaneously explain its nature. We record the process of the electron transport chain, including connections with oxidative phosphorylation, in such a way as to minimize the occurrence of discrepancies in interpretation. The educational program was evaluated in high schools through the administration of a questionnaire, which contained 12 opened-ended items and which required participants to evaluate the graphics of the animations, chemical content, student preferences, and its suitability for high school biochemistry teaching. © 2015 The International Union of Biochemistry and Molecular Biology.

π-Extended Isoindigo-Based Derivative: A Promising Electron-Deficient Building Block for Polymer Semiconductors.

PubMed

Xu, Long; Zhao, Zhiyuan; Xiao, Mingchao; Yang, Jie; Xiao, Jian; Yi, Zhengran; Wang, Shuai; Liu, Yunqi

2017-11-22

The exploration of novel electron-deficient building blocks is a key task for developing high-performance polymer semiconductors in organic thin-film transistors. In view of the situation of the lack of strong electron-deficient building blocks, we designed two novel π-extended isoindigo-based electron-deficient building blocks, IVI and F 4 IVI. Owing to the strong electron-deficient nature and the extended π-conjugated system of the two acceptor units, their copolymers, PIVI2T and PF 4 IVI2T, containing 2,2'-bithiophene donor units, are endowed with deep-lying highest occupied molecular orbital (HOMO)/lowest unoccupied molecular orbital (LUMO) energy levels and strong intermolecular interactions. In comparison to PIVI2T, the fluorinated PF 4 IVI2T exhibits stronger intra- and intermolecular interactions, lower HOMO/LUMO energy levels up to -5.74/-4.17 eV, and more ordered molecular packing with a smaller π-π stacking distance of up to 3.53 Å, resulting in an excellent ambipolar transporting behavior and a promising application in logic circuits for PF 4 IVI2T in ambient with hole and electron mobilities of up to 1.03 and 1.82 cm 2 V -1 s -1 , respectively. The results reveal that F 4 IVI is a promising and strong electron-deficient building unit to construct high-performance semiconducting polymers, which provides an insight into the structure-property relationships for the exploration and molecular engineering of excellent electron-deficient building blocks in the field of organic electronics.

A long-lived relativistic electron storage ring embedded in Earth's Outer Van Allen belt

DOE PAGES

Baker, D. N.; Kanekal, S. G.; Hoxie, V. C.; ...

2013-02-28

Since their discovery over 50 years ago, the Earth’s Van Allen radiation belts are thought to consist of two distinct zones of trapped, highly energetic charged particles. The outer zone is comprised predominantly of mega-electron volt (MeV) electrons that wax and wane in intensity on time scales ranging from hours to days depending primarily on external forcing by the solar wind. Thus, the spatially separated inner zone is comprised of commingled high-energy electrons and very energetic positive ions (mostly protons), the latter being stable in intensity levels over years to decades. In situ energy-specific and temporally resolved spacecraft observations revealmore » an isolated third ring, or torus, of high-energy (E > 2 MeV) electrons that formed on 2 September 2012 and persisted largely unchanged in the geocentric radial range of 3.0 to ~3.5 Earth radii for over four weeks before being disrupted (and virtually annihilated) by a powerful interplanetary shock wave passage.« less

Nanowire growth kinetics in aberration corrected environmental transmission electron microscopy

DOE PAGES

Chou, Yi -Chia; Panciera, Federico; Reuter, Mark C.; ...

2016-03-15

Here, we visualize atomic level dynamics during Si nanowire growth using aberration corrected environmental transmission electron microscopy, and compare with lower pressure results from ultra-high vacuum microscopy. We discuss the importance of higher pressure observations for understanding growth mechanisms and describe protocols to minimize effects of the higher pressure background gas.

78 FR 46908 - Announcement of Grant Application Deadlines and Funding Levels for the Assistance to High Energy...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-08-02

... materials. DATES: You may submit completed grant applications on paper or electronically according to the... materials may be obtained electronically through: http://www.rurdev.usda.gov/UEP_Our_Grant_Programs.html... other materials. FOR FURTHER INFORMATION CONTACT: Kristi Kubista-Hovis, Senior Policy Advisor, Rural...

The Impact of Software on Associate Degree Programs in Electronic Engineering Technology.

ERIC Educational Resources Information Center

Hata, David M.

1986-01-01

Assesses the range and extent of computer assisted instruction software available in electronic engineering technology education. Examines the need for software skills in four areas: (1) high-level languages; (2) assembly language; (3) computer-aided engineering; and (4) computer-aided instruction. Outlines strategies for the future in three…

High-Tc superconducting microbolometer for terahertz applications

NASA Astrophysics Data System (ADS)

Ulysse, C.; Gaugue, A.; Adam, A.; Kreisler, A. J.; Villégier, J.-C.; Thomassin, J.-L.

2002-05-01

Superconducting hot electron bolometer mixers are now a competitive alternative to Schottky diode mixers in the terahertz frequency range because of their ultra wideband (from millimeter waves to visible light), high conversion gain, and low intrinsic noise level. High Tc superconductor materials can be used to make hot electron bolometers and present some advantage in term of operating temperature and cooling. In this paper, we present first a model for the study of superconducting hot electron bolometers responsivity in direct detection mode, in order to establish a firm basis for the design of future THz mixers. Secondly, an original process to realize YBaCuO hot electron bolometer mixers will be described. Submicron YBaCuO superconducting structures are expitaxially sputter deposited on MgO substrates and patterned by using electron beam lithography in combination with optical lithography. Metal masks achieved by electron beam lithography are insuring a good bridge definition and protection during ion etching. Finally, detection experiments are being performed with a laser at 850 nm wavelength, in homodyne mode in order to prove the feasibility and potential performances of these devices.

Prompt Injections of Highly Relativistic Electrons Induced by Interplanetary Shocks: A Statistical Study of Van Allen Probes Observations

NASA Technical Reports Server (NTRS)

Schiller, Q.; Kanekal, S. G.; Jian, L. K,; Li, X.; Jones, A.; Baker, D. N.; Jaynes, A.; Spence, H. E.

2016-01-01

We conduct a statistical study on the sudden response of outer radiation belt electrons due to interplanetary (IP) shocks during the Van Allen Probes era, i.e., 2012 to 2015. Data from the Relativistic Electron-Proton Telescope instrument on board Van Allen Probes are used to investigate the highly relativistic electron response (E greater than 1.8 MeV) within the first few minutes after shock impact. We investigate the relationship of IP shock parameters, such as Mach number, with the highly relativistic electron response, including spectral properties and radial location of the shock-induced injection. We find that the driving solar wind structure of the shock does not affect occurrence for enhancement events, 25% of IP shocks are associated with prompt energization, and 14% are associated with MeV electron depletion. Parameters that represent IP shock strength are found to correlate best with highest levels of energization, suggesting that shock strength may play a key role in the severity of the enhancements. However, not every shock results in an enhancement, indicating that magnetospheric preconditioning may be required.

Definition phase study of the grand tour missions

NASA Technical Reports Server (NTRS)

Simpson, J. A.; Meyer, P.

1972-01-01

The research to define an energetic particle experiment for the OPTGT-MJS missions is reported. The studies reported include: (1) the use of silicon dectectors for low energy, low flux level measurements in the presence of RTG radiation and trapped electrons, (2) high energy proton damage of lithium-drifted and surface barrier silicon detectors, (3) the gas Cerenkov counter, (4) systems for detection of trapped high-energy protons in the presence of trapped electrons, and (5) reliability and redundancy.

Electronic circuit delivers pulse of high interval stability

NASA Technical Reports Server (NTRS)

Fisher, B.

1966-01-01

Circuit generates a pulse of high interval stability with a complexity level considerably below systems of comparable stability. This circuit is being used as a linear frequency discriminator in the signal conditioner of the Apollo command module.

Phonon-mediated high-T c superconductivity in hole-doped diamond-like crystalline hydrocarbon

DOE PAGES

Lian, Chao-Sheng; Wang, Jian-Tao; Duan, Wenhui; ...

2017-05-03

We here predict by ab initio calculations phonon-mediated high-T c superconductivity in hole-doped diamond-like cubic crystalline hydrocarbon K 4-CH (space group I2 1/3). This material possesses three key properties: (i) an all-sp 3 covalent carbon framework that produces high-frequency phonon modes, (ii) a steep-rising electronic density of states near the top of the valence band, and (iii) a Fermi level that lies in the σ-band, allowing for a strong coupling with the C-C bond-stretching modes. The simultaneous presence of these properties generates remarkably high superconducting transition temperatures above 80 K at an experimentally accessible hole doping level of only amore » few percent. These results identify a new extraordinary electron-phonon superconductor and pave the way for further exploration of this novel superconducting covalent metal.« less

Development of a single-shot CCD-based data acquisition system for time-resolved X-ray photoelectron spectroscopy at an X-ray free-electron laser facility

PubMed Central

Oura, Masaki; Wagai, Tatsuya; Chainani, Ashish; Miyawaki, Jun; Sato, Hiromi; Matsunami, Masaharu; Eguchi, Ritsuko; Kiss, Takayuki; Yamaguchi, Takashi; Nakatani, Yasuhiro; Togashi, Tadashi; Katayama, Tetsuo; Ogawa, Kanade; Yabashi, Makina; Tanaka, Yoshihito; Kohmura, Yoshiki; Tamasaku, Kenji; Shin, Shik; Ishikawa, Tetsuya

2014-01-01

In order to utilize high-brilliance photon sources, such as X-ray free-electron lasers (XFELs), for advanced time-resolved photoelectron spectroscopy (TR-PES), a single-shot CCD-based data acquisition system combined with a high-resolution hemispherical electron energy analyzer has been developed. The system’s design enables it to be controlled by an external trigger signal for single-shot pump–probe-type TR-PES. The basic performance of the system is demonstrated with an offline test, followed by online core-level photoelectron and Auger electron spectroscopy in ‘single-shot image’, ‘shot-to-shot image (image-to-image storage or block storage)’ and ‘shot-to-shot sweep’ modes at soft X-ray undulator beamline BL17SU of SPring-8. In the offline test the typical repetition rate for image-to-image storage mode has been confirmed to be about 15 Hz using a conventional pulse-generator. The function for correcting the shot-to-shot intensity fluctuations of the exciting photon beam, an important requirement for the TR-PES experiments at FEL sources, has been successfully tested at BL17SU by measuring Au 4f photoelectrons with intentionally controlled photon flux. The system has also been applied to hard X-ray PES (HAXPES) in ‘ordinary sweep’ mode as well as shot-to-shot image mode at the 27 m-long undulator beamline BL19LXU of SPring-8 and also at the SACLA XFEL facility. The XFEL-induced Ti 1s core-level spectrum of La-doped SrTiO3 is reported as a function of incident power density. The Ti 1s core-level spectrum obtained at low power density is consistent with the spectrum obtained using the synchrotron source. At high power densities the Ti 1s core-level spectra show space-charge effects which are analysed using a known mean-field model for ultrafast electron packet propagation. The results successfully confirm the capability of the present data acquisition system for carrying out the core-level HAXPES studies of condensed matter induced by the XFEL. PMID:24365935

RF System Requirements for a Medium-Energy Electron-Ion Collider (MEIC) at JLab

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rimmer, Robert A; Hannon, Fay E; Guo, Jiquan

2015-09-01

JLab is studying options for a medium energy electron-ion collider that could fit on the JLab site and use CEBAF as a full-energy electron injector. A new ion source, linac and booster would be required, together with collider storage rings for the ions and electrons. In order to achieve the maximum luminosity these will be high-current storage rings with many bunches. We present the high-level RF system requirements for the storage rings, ion booster ring and high-energy ion beam cooling system, and describe the technology options under consideration to meet them. We also present options for staging that might reducemore » the initial capital cost while providing a smooth upgrade path to a higher final energy. The technologies under consideration may also be useful for other proposed storage ring colliders or ultimate light sources.« less

High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Okojie, Robert S.; Chen, Liang-Yu

2002-01-01

It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate

NASA Astrophysics Data System (ADS)

Wakimoto, Hiroki; Nakazawa, Haruo; Matsumoto, Takashi; Nabetani, Yoichi

2018-04-01

For P-i-N diodes implanted and activated with boron ions into a highly-resistive n-type Si substrate, it is found that there is a large difference in the leakage current between relatively low temperature furnace annealing (FA) and high temperature laser annealing (LA) for activation of the p-layer. Since electron trap levels in the n-type Si substrate is supposed to be affected, we report on Deep Level Transient Spectroscopy (DLTS) measurement results investigating what kinds of trap levels are formed. As a result, three kinds of electron trap levels are confirmed in the region of 1-4 μm from the p-n junction. Each DLTS peak intensity of the LA sample is smaller than that of the FA sample. In particular, with respect to the trap level which is the closest to the silicon band gap center most affecting the reverse leakage current, it was not detected in LA. It is considered that the electron trap levels are decreased due to the thermal energy of LA. On the other hand, four kinds of trap levels are confirmed in the region of 38-44 μm from the p-n junction and the DLTS peak intensities of FA and LA are almost the same, considering that the thermal energy of LA has not reached this area. The large difference between the reverse leakage current of FA and LA is considered to be affected by the deep trap level estimated to be the interstitial boron.

10-fs-level synchronization of photocathode laser with RF-oscillator for ultrafast electron and X-ray sources

PubMed Central

Yang, Heewon; Han, Byungheon; Shin, Junho; Hou, Dong; Chung, Hayun; Baek, In Hyung; Jeong, Young Uk; Kim, Jungwon

2017-01-01

Ultrafast electron-based coherent radiation sources, such as free-electron lasers (FELs), ultrafast electron diffraction (UED) and Thomson-scattering sources, are becoming more important sources in today’s ultrafast science. Photocathode laser is an indispensable common subsystem in these sources that generates ultrafast electron pulses. To fully exploit the potentials of these sources, especially for pump-probe experiments, it is important to achieve high-precision synchronization between the photocathode laser and radio-frequency (RF) sources that manipulate electron pulses. So far, most of precision laser-RF synchronization has been achieved by using specially designed low-noise Er-fibre lasers at telecommunication wavelength. Here we show a modular method that achieves long-term (>1 day) stable 10-fs-level synchronization between a commercial 79.33-MHz Ti:sapphire laser oscillator and an S-band (2.856-GHz) RF oscillator. This is an important first step toward a photocathode laser-based femtosecond RF timing and synchronization system that is suitable for various small- to mid-scale ultrafast X-ray and electron sources. PMID:28067288

10-fs-level synchronization of photocathode laser with RF-oscillator for ultrafast electron and X-ray sources

NASA Astrophysics Data System (ADS)

Yang, Heewon; Han, Byungheon; Shin, Junho; Hou, Dong; Chung, Hayun; Baek, In Hyung; Jeong, Young Uk; Kim, Jungwon

2017-01-01

Ultrafast electron-based coherent radiation sources, such as free-electron lasers (FELs), ultrafast electron diffraction (UED) and Thomson-scattering sources, are becoming more important sources in today’s ultrafast science. Photocathode laser is an indispensable common subsystem in these sources that generates ultrafast electron pulses. To fully exploit the potentials of these sources, especially for pump-probe experiments, it is important to achieve high-precision synchronization between the photocathode laser and radio-frequency (RF) sources that manipulate electron pulses. So far, most of precision laser-RF synchronization has been achieved by using specially designed low-noise Er-fibre lasers at telecommunication wavelength. Here we show a modular method that achieves long-term (>1 day) stable 10-fs-level synchronization between a commercial 79.33-MHz Ti:sapphire laser oscillator and an S-band (2.856-GHz) RF oscillator. This is an important first step toward a photocathode laser-based femtosecond RF timing and synchronization system that is suitable for various small- to mid-scale ultrafast X-ray and electron sources.

10-fs-level synchronization of photocathode laser with RF-oscillator for ultrafast electron and X-ray sources.

PubMed

Yang, Heewon; Han, Byungheon; Shin, Junho; Hou, Dong; Chung, Hayun; Baek, In Hyung; Jeong, Young Uk; Kim, Jungwon

2017-01-09

Ultrafast electron-based coherent radiation sources, such as free-electron lasers (FELs), ultrafast electron diffraction (UED) and Thomson-scattering sources, are becoming more important sources in today's ultrafast science. Photocathode laser is an indispensable common subsystem in these sources that generates ultrafast electron pulses. To fully exploit the potentials of these sources, especially for pump-probe experiments, it is important to achieve high-precision synchronization between the photocathode laser and radio-frequency (RF) sources that manipulate electron pulses. So far, most of precision laser-RF synchronization has been achieved by using specially designed low-noise Er-fibre lasers at telecommunication wavelength. Here we show a modular method that achieves long-term (>1 day) stable 10-fs-level synchronization between a commercial 79.33-MHz Ti:sapphire laser oscillator and an S-band (2.856-GHz) RF oscillator. This is an important first step toward a photocathode laser-based femtosecond RF timing and synchronization system that is suitable for various small- to mid-scale ultrafast X-ray and electron sources.

Solution-Processable Balanced Ambipolar Field-Effect Transistors Based on Carbonyl-Regulated Copolymers.

PubMed

Yang, Chengdong; Fang, Renren; Yang, Xiongfa; Chen, Ru; Gao, Jianhua; Fan, Hanghong; Li, Hongxiang; Hu, Wenping

2018-04-04

It is very important to develop ambipolar field effect transistors to construct complementary circuits. To obtain balanced hole- and electron-transport properties, one of the key issues is to regulate the energy levels of the frontier orbitals of the semiconductor materials by structural tailoring, so that they match well with the electrode Fermi levels. Five conjugated copolymers were synthesized and exhibited low LUMO energy levels and narrow bandgaps on account of the strong electron-withdrawing effect of the carbonyl groups. Polymer thin film transistors were prepared by using a solution method and exhibited high and balanced hole and electron mobility of up to 0.46 cm 2  V -1  s -1 , which suggested that these copolymers are promising ambipolar semiconductor materials. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electronic noise in CT detectors: Impact on image noise and artifacts.

PubMed

Duan, Xinhui; Wang, Jia; Leng, Shuai; Schmidt, Bernhard; Allmendinger, Thomas; Grant, Katharine; Flohr, Thomas; McCollough, Cynthia H

2013-10-01

The objective of our study was to evaluate in phantoms the differences in CT image noise and artifact level between two types of commercial CT detectors: one with distributed electronics (conventional) and one with integrated electronics intended to decrease system electronic noise. Cylindric water phantoms of 20, 30, and 40 cm in diameter were scanned using two CT scanners, one equipped with integrated detector electronics and one with distributed detector electronics. All other scanning parameters were identical. Scans were acquired at four tube potentials and 10 tube currents. Semianthropomorphic phantoms were scanned to mimic the shoulder and abdominal regions. Images of two patients were also selected to show the clinical values of the integrated detector. Reduction of image noise with the integrated detector depended on phantom size, tube potential, and tube current. Scans that had low detected signal had the greatest reductions in noise, up to 40% for a 30-cm phantom scanned using 80 kV. This noise reduction translated into up to 50% in dose reduction to achieve equivalent image noise. Streak artifacts through regions of high attenuation were reduced by up to 45% on scans obtained using the integrated detector. Patient images also showed superior image quality for the integrated detector. For the same applied radiation level, the use of integrated electronics in a CT detector showed a substantially reduced level of electronic noise, resulting in reductions in image noise and artifacts, compared with detectors having distributed electronics.

The shortest Th-Th distance from a new type of quadruple bond.

PubMed

Hu, Han-Shi; Kaltsoyannis, Nikolas

2017-02-15

Compounds featuring unsupported metal-metal bonds between actinide elements remain highly sought after yet confined experimentally to inert gas matrix studies. Notwithstanding this paucity, actinide-actinide bonding has been the subject of extensive computational research. In this contribution, high level quantum chemical calculations at both the scalar and spin-orbit levels are used to probe the Th-Th bonding in a range of zero valent systems of general formula LThThL. Several of these compounds have very short Th-Th bonds arising from a new type of Th-Th quadruple bond with a previously unreported electronic configuration featuring two unpaired electrons in 6d-based δ bonding orbitals. H 3 AsThThAsH 3 is found to have the shortest Th-Th bond yet reported (2.590 Å). The Th 2 unit is a highly sensitive probe of ligand electron donor/acceptor ability; we can tune the Th-Th bond from quadruple to triple, double and single by judicious choice of the L group, up to 2.888 Å for singly-bonded ONThThNO.

Electrical characterisation of defects in wide bandgap semiconductors

NASA Astrophysics Data System (ADS)

Elsherif, Osama S.

Defects usually have a very large influence on the semiconductor material properties and hence on fabricated electronic devices. The nature and properties of defects in semiconducting materials can be investigated by applying electrical characterization techniques such as thermal admittance spectroscopy (TAS), deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS measurements. This dissertation presents the electrical characterisation of two different wide bandgap semiconducting materials (polycrystalline diamond and GaN) which have both recently attracted a great deal of attention because of their potential applications in the fields of power electronics and optoelectronics. Raman spectroscopy, I-V and C-V measurements were carried out as supporting experiments for the above investigations. The first part of this work focuses on studying the effect of B concentration on the electronic states in polycrystalline diamond thin films grown on silicon by the hot filament chemical vapour deposition method. A combination of high-resolution LDLTS and direct-capture cross-section measurements was used to investigate whether the deep electronic states present in the layers originated from point or extended defects. There was good agreement between data on deep electronic levels obtained from DLTS and TAS experiments. A number of hole traps have been detected; the majority of these levels show an unusual dependence of the DLTS signal on the fill pulse duration which is interpreted as possibly the levels are part of extended defects within the grain boundaries. In contrast, a defect level found in a more highly doped film, with an activation energy of -0.37 eV, exhibited behaviour characteristic of an isolated point defect, which we attribute to B-related centres in the bulk diamond, away from the dislocations. The second part of this thesis presents electrical measurements carried out at temperatures up to 450 K in order to study the electronic states associated with Mg in Mg-doped GaN films grown on sapphire by metalorganic vapour phase epitaxy, and to determine how these are affected by the threading dislocation density (TDD). Two different buffer layer schemes between the film and the sapphire substrate were used, giving rise to different TDDs in the GaN. Admittance spectroscopy of the films finds a single impurity-related acceptor level. It is observed in theses experiments that admittance spectroscopy detects no traps that can be attributed to extended defects, despite the fact that the dislocations are well-known to be active recombination centres. This unexpected finding is discussed in detail.

Electrical characterisation of defects in wide bandgap semiconductors

NASA Astrophysics Data System (ADS)

Elsherif, Osama S.

Defects usually have a very large influence on the semiconductor material properties and hence on fabricated electronic devices. The nature and properties of defects in semiconducting materials can be investigated by applying electrical characterization techniques such as thermal admittance spectroscopy (TAS), deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS measurements. This dissertation presents the electrical characterisation of two different wide bandgap semiconducting materials (polycrystalline diamond and GaN) which have both recently attracted a great deal of attention because of their potential applications in the fields of power electronics and optoelectronics. Raman spectroscopy, I-V and C-V measurements were carried out as supporting experiments for the above investigations.The first part of this work focuses on studying the effect of B concentration on the electronic states in polycrystalline diamond thin films grown on silicon by the hot filament chemical vapour deposition method. A combination of high-resolution LDLTS and direct-capture cross-section measurements was used to investigate whether the deep electronic states present in the layers originated from point or extended defects. There was good agreement between data on deep electronic levels obtained from DLTS and TAS experiments. A number of hole traps have been detected; the majority of these levels show an unusual dependence of the DLTS signal on the fill pulse duration which is interpreted as possibly the levels are part of extended defects within the grain boundaries. In contrast, a defect level found in a more highly doped film, with an activation energy of -0.37 eV, exhibited behaviour characteristic of an isolated point defect, which we attribute to B-related centres in the bulk diamond, away from the dislocations.The second part of this thesis presents electrical measurements carried out at temperatures up to 450 K in order to study the electronic states associated with Mg in Mg-doped GaN films grown on sapphire by metalorganic vapour phase epitaxy, and to determine how these are affected by the threading dislocation density (TDD). Two different buffer layer schemes between the film and the sapphire substrate were used, giving rise to different TDDs in the GaN. Admittance spectroscopy of the films finds a single impurity-related acceptor level. It is observed in theses experiments that admittance spectroscopy detects no traps that can be attributed to extended defects, despite the fact that the dislocations are well-known to be active recombination centres. This unexpected finding is discussed in detail.

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

NASA Astrophysics Data System (ADS)

Gao, Tao; Xu, Ruimin; Kong, Yuechan; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng

2015-06-01

We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr0.52Ti0.48)-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (gm-Vg) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.

A high resolution on-chip delay sensor with low supply-voltage sensitivity for high-performance electronic systems.

PubMed

Sheng, Duo; Lai, Hsiu-Fan; Chan, Sheng-Min; Hong, Min-Rong

2015-02-13

An all-digital on-chip delay sensor (OCDS) circuit with high delay-measurement resolution and low supply-voltage sensitivity for efficient detection and diagnosis in high-performance electronic system applications is presented. Based on the proposed delay measurement scheme, the quantization resolution of the proposed OCDS can be reduced to several picoseconds. Additionally, the proposed cascade-stage delay measurement circuit can enhance immunity to supply-voltage variations of the delay measurement resolution without extra self-biasing or calibration circuits. Simulation results show that the delay measurement resolution can be improved to 1.2 ps; the average delay resolution variation is 0.55% with supply-voltage variations of ±10%. Moreover, the proposed delay sensor can be implemented in an all-digital manner, making it very suitable for high-performance electronic system applications as well as system-level integration.

Piezoelectric-based self-powered electronic adjustable impulse switches

NASA Astrophysics Data System (ADS)

Rastegar, Jahangir; Kwok, Philip

2018-03-01

Novel piezoelectric-based self-powered impulse detecting switches are presented. The switches are designed to detect shock loading events resulting in acceleration or deceleration above prescribed levels and durations. The prescribed acceleration level and duration thresholds are adjustable. They are provided with false trigger protection logic. The impulse switches are provided with electronic and logic circuitry to detect prescribed impulse events and reject events such as high amplitude but short duration shocks, and transportation vibration and similar low amplitude and relatively long duration events. They can be mounted directly onto electronics circuit boards, thereby significantly simplifying the electrical and electronic circuitry, simplifying the assembly process and total cost, significantly reducing the occupied volume, and in some applications eliminating the need for physical wiring to and from the impulse switches. The design of prototypes and testing under realistic conditions are presented.

Energy Harvesters for Wearable and Stretchable Electronics: From Flexibility to Stretchability.

PubMed

Wu, Hao; Huang, YongAn; Xu, Feng; Duan, Yongqing; Yin, Zhouping

2016-12-01

The rapid advancements of wearable electronics have caused a paradigm shift in consumer electronics, and the emerging development of stretchable electronics opens a new spectrum of applications for electronic systems. Playing a critical role as the power sources for independent electronic systems, energy harvesters with high flexibility or stretchability have been the focus of research efforts over the past decade. A large number of the flexible energy harvesters developed can only operate at very low strain level (≈0.1%), and their limited flexibility impedes their application in wearable or stretchable electronics. Here, the development of highly flexible and stretchable (stretchability >15% strain) energy harvesters is reviewed with emphasis on strategies of materials synthesis, device fabrication, and integration schemes for enhanced flexibility and stretchability. Due to their particular potential applications in wearable and stretchable electronics, energy-harvesting devices based on piezoelectricity, triboelectricity, thermoelectricity, and dielectric elastomers have been largely developed and the progress is summarized. The challenges and opportunities of assembly and integration of energy harvesters into stretchable systems are also discussed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electroluminescence and other diagnostic techniques for the study of hot-electron effects in compound semiconductor devices

NASA Astrophysics Data System (ADS)

Zanoni, Enrico; Meneghesso, Gaudenzio; Menozzi, Roberto

2000-03-01

Hot electron in III-V FETs can be indirectly monitored by measuring the current coming out from the gate when the device is biased at high electric fields. This negative current is due to the collection of holes generated by impact ionization in the gate-to drain region. Electroluminescence represents a powerful tool in order to characterize not only hot electrons but also material properties. By using spatially resolved emission microscopy it is possible to show that the light due to cold electron/hole recombination is emitted between the gate and the source (low electric field region), while the contribution due to hot electrons is emitted between the gate and the drain (high electric field region). Deep-traps created in the device by hot carriers can be analysed by means of drain current deep level transient spectroscopy and by transconductance frequency dispersion. Cathodoluminescence, optical beam induced current, X-ray spectroscopy, electron energy loss spectroscopy in combination with a transmission electron microscopy are powerful tools in order to identify and localize surface modification following hot-electron stress tests.

Amplified Thermionic Cooling Using Arrays of Nanowires

NASA Technical Reports Server (NTRS)

Yang, Eui-Hyeok; Choi, Daniel; Shcheglov, Kirill; Hishinuma, Yoshikazu

2007-01-01

A class of proposed thermionic cooling devices would incorporate precise arrays of metal nanowires as electron emitters. The proposed devices could be highly miniaturized, enabling removal of heat from locations, very close to electronic devices, that have previously been inaccessible for heat-removal purposes. The resulting enhancement of removal of heat would enable operation of the devices at higher power levels and higher clock speeds. Moreover, the mass, complexity, and bulk of electronic circuitry incorporating these highly miniaturized cooling devices could be considerably reduced, relative to otherwise equivalent circuitry cooled by conventional electromechanical, thermoelectric, and fluidic means. In thermionic cooling, one exploits the fact that because only the highest-energy electrons are thermionically emitted, collecting those electrons to prevent their return to the emitting electrode results in the net removal of heat from that electrode. Collection is effected by applying an appropriate positive bias potential to another electrode placed near the emitting electrode. The concept underlying the proposal is that the thermionic-emission current and, hence, the cooling effect attainable by use of an array of nanowires could be significantly greater than that attainable by use of a single emitting electrode or other electron- emitting surface. The wires in an array according to the proposal would protrude perpendicularly from a planar surface and their heights would be made uniform to within a sub-nanometer level of precision

Molecular gap and energy level diagram for pentacene adsorbed on filled d-band metal surfaces

NASA Astrophysics Data System (ADS)

Baldacchini, Chiara; Mariani, Carlo; Betti, Maria Grazia; Gavioli, L.; Fanetti, M.; Sancrotti, M.

2006-10-01

The authors present a combined photoemission and scanning-tunneling spectroscopy study of the filled electronic states, the molecular energy gap, and the energy level diagram of highly ordered arrays of pentacene deposited on the Cu(119) vicinal surface. The states localized at the interface are clearly singled out, comparing the results at different pentacene thicknesses and with gas-phase photoemission data. The molecular gap of 2.35eV, the hole injection barrier of 1.05eV, and the electron injection barrier of 1.30eV determine the energy level diagram of the states localized at the pentacene molecules.

7TH International Symposium: Nanostructure: Physics and Technology

DTIC Science & Technology

1999-01-01

within the density functional theory [8]. The Hamiltonian (fit and/H 4 for spin 4" and spin 4. electrons, respectively) is given by: fi) - i2--V[ + E,(r...population of higher energy levels by electrons with spin -1/2. This results in increased polarization of luminescence which may exceed 50% (see curve 1 in...that higher energy lines quench at high field. In addition a change in the linewidth of the emission is found for high electric fields. Introduction

Electrons in the Inner Van Allen Belt

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reeves, Geoff

A recent study shows that the inner Van Allen belt has less radiation than previously believed. Observations from NASA’s Van Allen probes show the fastest, most energetic electrons in the inner radiation belt are actually much rarer and harder to find than scientists expected. This is good news for spacecraft that are orbiting in the region and can be damaged by high levels of radiation. The results will also help scientists better understand—and detect—effects from high-altitude nuclear explosions.

SMEs and Electronic Commerce: A Departure from the Traditional Prioritisation of Training?

ERIC Educational Resources Information Center

Barry, Helen; Milner, Brigid

2002-01-01

A survey of 56 small/medium-sized Irish enterprises showed that 46% were highly proficient in electronic commerce, 42% were at the basic level. Media pressure significantly influenced adoption. In 40% of firms, owner-managers were the driving force. E-commerce was not yet business critical and relevant training was not yet a comprehensive…

Test SCRs and Triacs with a Lab-Built Checker

ERIC Educational Resources Information Center

Harman, Charles

2010-01-01

Students enrolled in advanced electronics courses and/or industrial electronics classes at the high school level and at technical colleges ultimately learn about solid-state switches such as the SCR (silicon controlled rectifier) and the triac. Both the SCR and the triac are in a family of four-layer devices called thyristors. They are both…

p-π Conjugated Polymers Based on Stable Triarylborane with n-Type Behavior in Optoelectronic Devices.

PubMed

Meng, Bin; Ren, Yi; Liu, Jun; Jäkle, Frieder; Wang, Lixiang

2018-02-19

p-π conjugation with embedded heteroatoms offers unique opportunities to tune the electronic structure of conjugated polymers. An approach is presented to form highly electron-deficient p-π conjugated polymers based on triarylboranes, demonstrate their n-type behavior, and explore device applications. By combining alternating [2,4,6-tris(trifluoromethyl)phenyl]di(thien-2-yl)borane (FBDT) and electron-deficient isoindigo (IID)/pyridine-flanked diketopyrrolopyrrole (DPPPy) units, we achieve low-lying lowest unoccupied molecular orbital (LUMO) and highest occupied molecular orbital (HOMO) energy levels, high electron mobilities, and broad absorptions in the visible region. All-polymer solar cells with these polymers as electron acceptors exhibit encouraging photovoltaic performance with power conversion efficiencies of up to 2.83 %. These results unambiguously prove the n-type behavior and demonstrate the photovoltaic applications of p-π conjugated polymers based on triarylborane. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

EBIC spectroscopy - A new approach to microscale characterization of deep levels in semi-insulating GaAs

NASA Technical Reports Server (NTRS)

Li, C.-J.; Sun, Q.; Lagowski, J.; Gatos, H. C.

1985-01-01

The microscale characterization of electronic defects in (SI) GaAs has been a challenging issue in connection with materials problems encountered in GaAs IC technology. The main obstacle which limits the applicability of high resolution electron beam methods such as Electron Beam-Induced Current (EBIC) and cathodoluminescence (CL) is the low concentration of free carriers in semiinsulating (SI) GaAs. The present paper provides a new photo-EBIC characterization approach which combines the spectroscopic advantages of optical methods with the high spatial resolution and scanning capability of EBIC. A scanning electron microscope modified for electronic characterization studies is shown schematically. The instrument can operate in the standard SEM mode, in the EBIC modes (including photo-EBIC and thermally stimulated EBIC /TS-EBIC/), and in the cathodo-luminescence (CL) and scanning modes. Attention is given to the use of CL, Photo-EBIC, and TS-EBIC techniques.

Quantum-chemical calculations and IR spectra of the (F2)MF2 molecules (M = B, Al, Ga, In, Tl) in solid matrices: a new class of very high electron affinity neutral molecules.

PubMed

Wang, Xuefeng; Andrews, Lester

2011-03-23

Electron-deficient group 13 metals react with F(2) to give the compounds MF(2) (M = B, Al, Ga, In, Tl), which combine with F(2) to form a new class of very high electron affinity neutral molecules, (F(2))MF(2), in solid argon and neon. These (F(2))MF(2) fluorine metal difluoride molecules were identified through matrix IR spectra containing new antisymmetric and symmetric M-F stretching modes. The assignments were confirmed through close comparisons with frequency calculations using DFT methods, which were calibrated against the MF(3) molecules observed in all of the spectra. Electron affinities calculated at the CCSD(T) level fall between 7.0 and 7.8 eV, which are in the range of the highest known electron affinities.

Electron reflection and secondary emission characteristics of sputter-textured pyrolytic graphite surfaces

NASA Technical Reports Server (NTRS)

Wintucky, E. G.; Curren, A. N.; Sovey, J. S.

1981-01-01

Low secondary and reflected primary electron emission from the collector electrode surfaces is important for optimum collector efficiency and hence for high overall efficiency of microwave amplifier tubes used in communication satellites and in military systems. Ion sputter texturing of the surface effectively suppresses electron emission from pyrolytic graphite, which is a promising collector electrode material. Secondary and reflected primary electron emission characteristics of sputter textured pyrolytic graphite surfaces with microstructures of various sizes and densities are presented. The microstructure with the lowest electron emission levels, less than those of soot, consists of a dense array of tall, thin spires.

Study of nanometer-level precise phase-shift system used in electronic speckle shearography and phase-shift pattern interferometry

NASA Astrophysics Data System (ADS)

Jing, Chao; Liu, Zhongling; Zhou, Ge; Zhang, Yimo

2011-11-01

The nanometer-level precise phase-shift system is designed to realize the phase-shift interferometry in electronic speckle shearography pattern interferometry. The PZT is used as driving component of phase-shift system and translation component of flexure hinge is developed to realize micro displacement of non-friction and non-clearance. Closed-loop control system is designed for high-precision micro displacement, in which embedded digital control system is developed for completing control algorithm and capacitive sensor is used as feedback part for measuring micro displacement in real time. Dynamic model and control model of the nanometer-level precise phase-shift system is analyzed, and high-precision micro displacement is realized with digital PID control algorithm on this basis. It is proved with experiments that the location precision of the precise phase-shift system to step signal of displacement is less than 2nm and the location precision to continuous signal of displacement is less than 5nm, which is satisfied with the request of the electronic speckle shearography and phase-shift pattern interferometry. The stripe images of four-step phase-shift interferometry and the final phase distributed image correlated with distortion of objects are listed in this paper to prove the validity of nanometer-level precise phase-shift system.

High School Forum

ERIC Educational Resources Information Center

Herron, J. Dudley, Ed.

1977-01-01

Discusses uses of programmable pocket electronic calculators in the secondary level classroom. Uses discussed include: grading, laboratory, exercises, computing T-scores, and a quantitative approach to chemical equilibrium. (SL)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koryazhkina, M. N., E-mail: mahavenok@mail.ru; Tikhov, S. V.; Gorshkov, O. N.

It is shown that the formation of Au nanoparticles at the insulator–silicon interface in structures with a high density of surface states results in a shift of the Fermi-level pinning energy at this interface towards the valence-band ceiling in silicon and in increasing the surface-state density at energies close to the Fermi level. In this case, a band with a peak at 0.85 eV arises on the photosensivity curves of the capacitor photovoltage, which is explained by the photoemission of electrons from the formed Au-nanoparticle electron states near the valence-band ceiling in silicon.

Atomic Structure and Properties of Extended Defects in Silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buczko, R.; Chisholm, M.F.; Kaplan, T.

1998-10-15

The Z-contrast technique represents a new approach to high-resolution electron microscopy allowing for the first time incoherent imaging of materials on the atomic scale. The key advantages of the technique, an intrinsically higher resolution limit and directly interpretable, compositionally sensitive imaging, allow a new level of insight into the atomic configurations of extended defects in silicon. This experimental technique has been combined with theoretical calculations (a combination of first principles, tight binding, and classical methods) to extend this level of insight by obtaining the energetic and electronic structure of the defects.

Multistage Coupling of Laser-Wakefield Accelerators with Curved Plasma Channel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, J.; Chen, M.; Wu, W. Y.

Multistage coupling of laser-wakefield accelerators is essential to overcome laser energy depletion for high-energy applications such as TeV level electron-positron colliders. Current staging schemes feed subsequent laser pulses into stages using plasma mirrors, while controlling electron beam focusing with plasma lenses. Here a more compact and efficient scheme is proposed to realize simultaneous coupling of the electron beam and the laser pulse into a second stage. Furthermore, a curved channel with transition segment is used to guide a fresh laser pulse into a subsequent straight channel, while allowing the electrons to propagate in a straight channel. This scheme then benefitsmore » from a shorter coupling distance and continuous guiding of the electrons in plasma, while suppressing transverse beam dispersion. Within moderate laser parameters, particle-in-cell simulations demonstrate that the electron beam from a previous stage can be efficiently injected into a subsequent stage for further acceleration, while maintaining high capture efficiency, stability, and beam quality.« less

Multistage Coupling of Laser-Wakefield Accelerators with Curved Plasma Channel

DOE PAGES

Luo, J.; Chen, M.; Wu, W. Y.; ...

2018-04-10

Multistage coupling of laser-wakefield accelerators is essential to overcome laser energy depletion for high-energy applications such as TeV level electron-positron colliders. Current staging schemes feed subsequent laser pulses into stages using plasma mirrors, while controlling electron beam focusing with plasma lenses. Here a more compact and efficient scheme is proposed to realize simultaneous coupling of the electron beam and the laser pulse into a second stage. Furthermore, a curved channel with transition segment is used to guide a fresh laser pulse into a subsequent straight channel, while allowing the electrons to propagate in a straight channel. This scheme then benefitsmore » from a shorter coupling distance and continuous guiding of the electrons in plasma, while suppressing transverse beam dispersion. Within moderate laser parameters, particle-in-cell simulations demonstrate that the electron beam from a previous stage can be efficiently injected into a subsequent stage for further acceleration, while maintaining high capture efficiency, stability, and beam quality.« less

RF extraction issues in the relativistic klystron amplifiers

NASA Astrophysics Data System (ADS)

Serlin, Victor; Friedman, Moshe; Lampe, Martin; Hubbard, Richard F.

1994-05-01

Relativistic klystron amplifiers (RKAs) were successfully operated at NRL in several frequency regimes and power levels. In particular, an L-band RKA was optimized for high- power rf extraction into the atmosphere and an S-band RKA was operated, both in a two-beam and a single-beam configuration. At L-band the rf extraction at maximum power levels (>= 15 GW) was hindered by pulse shortening and poor repeatability. Preliminary investigation showed electron emission in the radiating horn, due to very high voltages associated with the multi-gigawatt rf power levels. This electron current constituted an electric load in parallel with the radiating antenna, and precipitated the rf pulse collapse. At S-band the peak extracted power reached 1.7 GW with power efficiency approximately 50%. However, pulse shortening limited the duration to approximately 50 nanoseconds. The new triaxial RKA promises to solve many of the existing problems.

Demonstrations of Extraterrestrial Life Detection Techniques in the High School Biology Laboratory

ERIC Educational Resources Information Center

Saltinski, Ronald

1969-01-01

Discusses the experimental procedures and equipment for exobiology projects at the high school level. An interdisciplinary approach involving electronic equipment and micro-biological laboratory techniques is used. Photographs and diagrams of equipment are included. Bibliography. (LC)

Radiation testing campaign results for understanding the suitability of FPGAs in detector electronics

DOE PAGES

Citterio, M.; Camplani, A.; Cannon, M.; ...

2015-11-19

SRAM based Field Programmable Gate Arrays (FPGAs) have been rarely used in High Energy Physics (HEP) due to their sensitivity to radiation. The last generation of commercial FPGAs based on 28 nm feature size and on Silicon On Insulator (SOI) technologies are more tolerant to radiation to the level that their use in front-end electronics is now feasible. FPGAs provide re-programmability, high-speed computation and fast data transmission through the embedded serial transceivers. They could replace custom application specific integrated circuits in front end electronics in locations with moderate radiation field. Finally, the use of a FPGA in HEP experiments ismore » only limited by our ability to mitigate single event effects induced by the high energy hadrons present in the radiation field.« less

Multienergy gold ion implantation for enhancing the field electron emission characteristics of heterogranular structured diamond films grown on Au-coated Si substrates

NASA Astrophysics Data System (ADS)

Sankaran, K. J.; Manoharan, D.; Sundaravel, B.; Lin, I. N.

2016-09-01

Multienergy Au-ion implantation enhanced the electrical conductivity of heterogranular structured diamond films grown on Au-coated Si substrates to a high level of 5076.0 (Ω cm)-1 and improved the field electron emission (FEE) characteristics of the films to low turn-on field of 1.6 V/μm, high current density of 5.4 mA/cm2 (@ 2.65 V/μm), and high lifetime stability of 1825 min. The catalytic induction of nanographitic phases in the films due to Au-ion implantation and the formation of diamond-to-Si eutectic interface layer due to Au-coating on Si together encouraged the efficient conducting channels for electron transport, thereby improved the FEE characteristics of the films.

Hot carrier-enhanced interlayer electron-hole pair multiplication in 2D semiconductor heterostructure photocells

NASA Astrophysics Data System (ADS)

Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger K.; Aji, Vivek; Gabor, Nathaniel M.

2017-12-01

Strong electronic interactions can result in novel particle-antiparticle (electron-hole, e-h) pair generation effects, which may be exploited to enhance the photoresponse of nanoscale optoelectronic devices. Highly efficient e-h pair multiplication has been demonstrated in several important nanoscale systems, including nanocrystal quantum dots, carbon nanotubes and graphene. The small Fermi velocity and nonlocal nature of the effective dielectric screening in ultrathin layers of transition-metal dichalcogenides (TMDs) indicates that e-h interactions are very strong, so high-efficiency generation of e-h pairs from hot electrons is expected. However, such e-h pair multiplication has not been observed in 2D TMD devices. Here, we report the highly efficient multiplication of interlayer e-h pairs in 2D semiconductor heterostructure photocells. Electronic transport measurements of the interlayer I-VSD characteristics indicate that layer-indirect e-h pairs are generated by hot-electron impact excitation at temperatures near T = 300 K. By exploiting this highly efficient interlayer e-h pair multiplication process, we demonstrate near-infrared optoelectronic devices that exhibit 350% enhancement of the optoelectronic responsivity at microwatt power levels. Our findings, which demonstrate efficient carrier multiplication in TMD-based optoelectronic devices, make 2D semiconductor heterostructures viable for a new class of ultra-efficient photodetectors based on layer-indirect e-h excitations.

Diffusion length measurement using the scanning electron microscope. [for silicon solar cell

NASA Technical Reports Server (NTRS)

Weizer, V. G.

1975-01-01

The present work describes a measuring technique employing the scanning electron microscope in which values of the true bulk diffusion length are obtained. It is shown that surface recombination effects can be eliminated through application of highly doped surface field layers. The effects of high injection level and low-high junction current generation are investigated. Results obtained with this technique are compared to those obtained by a penetrating radiation (X-ray) method, and a close agreement is found. The SEM technique is limited to cells that contain a back surface field layer.

Detection Technique and Overview of EPT-HET of Solar Orbiter

NASA Astrophysics Data System (ADS)

Kulkarni, S. R.; Tammen, J.; Boden, S.; Steinhagen, J.; Elftmann, R.; Martin-Garcia, C.; Boettcher, S. I.; Seimetz, L.; Ravanbakhsh, A.; Mahesh, Y.; Schuster, B.; Kulemzin, A.; Wimmer-Schweingruber, R. F.; Rodriguez-Pacheco, J.; Prieto, M.; Sanchez, S.

2016-12-01

The Energetic Particle Detector (EPD) suite for ESA's Solar Orbiter will provide key measurements to address particle acceleration at and near the Sun. The EPD suite consists of four sensors (STEP, SIS, EPT, and HET). The Electron Proton Telescope (EPT) is designed to cleanly separate and measure electrons in the energy range from 20 - 400 keV and protons from 20 - 7000 keV. The Solar Orbiter EPT electron measurements from 20 - 400 keV will cover the gap with some overlap between suprathermal electrons measured by STEP and high energy electrons measured by HET. The proton measurements from 20 -7000 keV will partially cover the gap between STEP and HET. The Electron and Proton Telescope relies on the magnet/foil-technique. The High-Energy Telescope (HET) will measure electrons from 300 keV up to about 30 MeV, protons from 10 -100 MeV, and heavy ions from 20 to 200 MeV/nuc by dE/dx -Total E technique. Thus, HET covers the energy range which is of specific interest for studies of the space environment and will perform the measurements needed to understand the origin of high-energy events at the Sun which occasionally accelerate particles to such high energies that they can penetrate the Earth's atmosphere and be measured at ground level. Here we present the current development status of EPT-HET and calibration results of units.

NASA/DOD Aerospace Knowledge Diffusion Research Project. Report 30: Computer-Mediated Communication (CMC) and the communication of technical information in aerospace. Ph.D Thesis - Rensselaer Polytechnic Inst. Final Report

NASA Technical Reports Server (NTRS)

Murphy, Daniel J.; Pinelli, Thomas E.

1994-01-01

This research used survey research to examine the use of communication media in general and electronic media specifically in the U.S. aerospace industry. The survey population included 1,006 randomly selected U.S. aerospace engineers and scientists who belong to the American Institute of Aeronautics and Astronautics (AIAA). Survey data were compared with qualitative information obtained from 32 AIAA members in telephone and face-to-face conversations. The Information Processing (IP) model developed by Tushman and Nadler and Daft and Lengel constituted the study's theoretical basis. This research analyzed responses regarding communication methods of U.S. aerospace engineers and scientists who create use and disseminate aerospace knowledge and explored selected contextual environmental variables related to media use and effective performance. The results indicate that uncertainty is significantly reduced in environments when levels of analyzability are high. When uncertainty is high there is significantly more use of electronic media. However no relation was found between overall effectiveness and media use in environments stratified by levels by analyzability or equivocality. The results indicate modest support for the influences of uncertainty and analyzability on electronic media use. Although most respondents reported that electronic networks are important for their work the data suggest that there are sharply disparate levels of use.

First-principles calculation of the structure and electronic properties of Fe-substituted Bi2Ti2O7

NASA Astrophysics Data System (ADS)

Huang, Jin-Dou; Zhang, Zhenyi; Lin, Feng; Dong, Bin

2017-12-01

We performed first-principles calculations to investigate the formation energy, geometry structure, and electronic property of Fe-doped Bi2Ti2O7 systems with different Fe doping content. The calculated formation energies indicate that the substitutional configurations of Fe-doping Bi2Ti2O7 are easy to obtain under O-rich growth condition, but their thermodynamic stability decreases with the increase of Fe content. The calculated spin-resolved density of states and band structures indicate that the introduction of Fe into Bi2Ti2O7 brings high spin polarization. The spin-down impurity levels in Fe x Bi2-x Ti2O7 and spin-up impurity levels in Fe x Bi2Ti2-x O7 systems locate in the bottom of conduction band and narrow the band gap significantly, thus leading to the absorption of visible light. Interestingly, the impurity states in Fe x Bi2-x Ti2O7 are the efficient separation center of photogenerated electron and hole, and less affected by Fe doping content, in comparison, the levels of impurity band in Fe x Bi2Ti2-x O7 systems are largely effected by the Fe doping content, and high Fe doping content is the key factor to improve the separating rate of photogenerated electron and hole.

An Overview of Electron-Proton and High Energy Telescopes of Solar Orbiter

NASA Astrophysics Data System (ADS)

Kulkarni, S. R.; Grunau, J.; Boden, S.; Steinhagen, J.; Martin, C.; Wimmer-Schweingruber, R. F.; Boettcher, S.; Seimetz, L.; Ravanbakhsh, A.; Elftmann, R.; Rodriguez-Pacheco, J.; Prieto, M.; Gomez-Herrero, R.

2013-12-01

The Energetic Particle Detector (EPD) suite for ESA's Solar Orbiter will provide key measurements to address particle acceleration at and near the Sun. The EPD suite consists of five sensors (STEP, SIS, EPT, and HET). The University of Kiel in Germany is also responsible for the design, development, and build of EPT and HET which are presented here. The Electron Proton Telescope (EPT) is designed to cleanly separate and measure electrons in the energy range from 20 - 400 keV and protons from 20 - 7000 keV. The Solar Orbiter EPT electron measurements from 20 - 400 keV will cover the gap with some overlap between suprathermal electrons measured by STEP and high energy electrons measured by HET. The proton measurements from 20 -7000 keV will partially cover the gap between STEP and HET. The Electron and Proton Telescope relies on the magnet/foil-technique. The High-Energy Telescope (HET) on ESA's Solar Orbiter mission, will measure electrons from 300 keV up to about 30 MeV, protons from 10 -100 MeV, and heavy ions from ~20 to 200 MeV/nuc. Thus, HET covers the energy range which is of specific interest for studies of the space environment and will perform the measurements needed to understand the origin of high-energy events at the Sun which occasionally accelerate particles to such high energies that they can penetrate the Earth's atmosphere and be measured at ground level. Here we present the current development status of EPT-HET units and calibration results of demonstration models and present plans for future activities.

MATLAB/Simulink Pulse-Echo Ultrasound System Simulator Based on Experimentally Validated Models.

PubMed

Kim, Taehoon; Shin, Sangmin; Lee, Hyongmin; Lee, Hyunsook; Kim, Heewon; Shin, Eunhee; Kim, Suhwan

2016-02-01

A flexible clinical ultrasound system must operate with different transducers, which have characteristic impulse responses and widely varying impedances. The impulse response determines the shape of the high-voltage pulse that is transmitted and the specifications of the front-end electronics that receive the echo; the impedance determines the specification of the matching network through which the transducer is connected. System-level optimization of these subsystems requires accurate modeling of pulse-echo (two-way) response, which in turn demands a unified simulation of the ultrasonics and electronics. In this paper, this is realized by combining MATLAB/Simulink models of the high-voltage transmitter, the transmission interface, the acoustic subsystem which includes wave propagation and reflection, the receiving interface, and the front-end receiver. To demonstrate the effectiveness of our simulator, the models are experimentally validated by comparing the simulation results with the measured data from a commercial ultrasound system. This simulator could be used to quickly provide system-level feedback for an optimized tuning of electronic design parameters.

Influence of magnetism and correlation on the spectral properties of doped Mott insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yao; Moritz, Brian; Chen, Cheng-Chien

Unraveling the nature of the doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. Here, for this purpose, we study the evolution of spectral properties upon doping Mott insulating states by utilizing the cluster perturbation theory on the Hubbard and t – J -like models. Specifically, a quasifree dispersion crossing the Fermi level develops with small doping, and it eventually evolves into the most dominant feature at high doping levels. Although this dispersion is related to the free-electron hopping, our study shows that this spectral feature is,more » in fact, influenced inherently by both electron-electron correlation and spin-exchange interaction: the correlation destroys coherence, while the coupling between spin and mobile charge restores it in the photoemission spectrum. Due to the persistent impact of correlations and spin physics, the onset of gaps or the high-energy anomaly in the spectral functions can be expected in doped Mott insulators.« less

Influence of magnetism and correlation on the spectral properties of doped Mott insulators

DOE PAGES

Wang, Yao; Moritz, Brian; Chen, Cheng-Chien; ...

2018-03-01

Unraveling the nature of the doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. Here, for this purpose, we study the evolution of spectral properties upon doping Mott insulating states by utilizing the cluster perturbation theory on the Hubbard and t – J -like models. Specifically, a quasifree dispersion crossing the Fermi level develops with small doping, and it eventually evolves into the most dominant feature at high doping levels. Although this dispersion is related to the free-electron hopping, our study shows that this spectral feature is,more » in fact, influenced inherently by both electron-electron correlation and spin-exchange interaction: the correlation destroys coherence, while the coupling between spin and mobile charge restores it in the photoemission spectrum. Due to the persistent impact of correlations and spin physics, the onset of gaps or the high-energy anomaly in the spectral functions can be expected in doped Mott insulators.« less

Electron Beam/Optical Hybrid Lithography For The Production Of Gallium Arsenide Monolithic Microwave Integrated Circuits (Mimics)

NASA Astrophysics Data System (ADS)

Nagarajan, Rao M.; Rask, Steven D.

1988-06-01

A hybrid lithography technique is described in which selected levels are fabricated by high resolution direct write electron beam lithography and all other levels are fabricated optically. This technique permits subhalf micron geometries and the site-by-site alignment for each field written by electron beam lithography while still maintaining the high throughput possible with optical lithography. The goal is to improve throughput and reduce overall cost of fabricating MIMIC GaAS chips without compromising device performance. The lithography equipment used for these experiments is the Cambridge Electron beam vector scan system EBMF 6.4 capable of achieving ultra high current densities with a beam of circular cross section and a gaussian intensity profile operated at 20 kev. The optical aligner is a Karl Suss Contact aligner. The flexibility of the Cambridge electron beam system is matched to the less flexible Karl Suss contact aligner. The lithography related factors, such as image placement, exposure and process related analyses, which influence overlay, pattern quality and performance, are discussed. A process chip containing 3.2768mm fields in an eleven by eleven array was used for alignment evaluation on a 3" semi-insulating GaAS wafer. Each test chip contained five optical verniers and four Prometrix registration marks per field along with metal bumps for alignment marks. The process parameters for these chips are identical to those of HEMT/epi-MESFET ohmic contact and gate layer processes. These layers were used to evaluate the overlay accuracy because of their critical alignment and dimensional control requirements. Two cases were examined: (1) Electron beam written gate layers aligned to optically imaged ohmic contact layers and (2) Electron beam written gate layers aligned to electron beam written ohmic contact layers. The effect of substrate charging by the electron beam is also investigated. The resulting peak overlay error accuracies are: (1) Electron beam to optical with t 0.2μm (2 sigma) and (2) Electron beam to electron beam with f 0.lμm (2 sigma). These results suggest that the electron beam/optical hybrid lithography techniques could be used for MIMIC volume production as alignment tolerances required by GaAS chips are met in both cases. These results are discussed in detail.

Detection of Solar Energetic Electron, Proton and Heavy Ions by EPT-HET of Solar Orbiter: Calibration Results

NASA Astrophysics Data System (ADS)

Kulkarni, S. R.; Boden, S.; Elftmann, R.; Tammen, J.; Martin-Garcia, C.; Boettcher, S. I.; Seimetz, L.; Ravanbakhsh, A.; Mahesh, Y.; Schuster, B.; Wimmer-Schweingruber, R. F.; Rodriguez-Pacheco, J.

2017-12-01

The Energetic Particle Detector (EPD) suite for ESA's Solar Orbiter will provide key measurements to address particle acceleration at and near the Sun. The EPD suite consists of four sensors (STEP, SIS, EPT, and HET). The Electron Proton Telescope (EPT) is designed to cleanly separate and measure electrons in the energy range from 20 - 400 keV and protons from 20 - 7000 keV. The Solar Orbiter EPT electron measurements from 20 - 400 keV will cover the gap with some overlap between suprathermal electrons measured by STEP and high energy electrons measured by HET. The proton measurements from 20 -7000 keV will partially cover the gap between STEP and HET. The Electron and Proton Telescope relies on the magnet/foil-technique. The High-Energy Telescope (HET) will measure electrons from 300 keV up to about 30 MeV, protons from 10 -100 MeV, and heavy ions from 20 to 200 MeV/nuc by dE/dx -Total E technique. Thus, HET covers the energy range which is of specific interest for studies of the space environment and will perform the measurements needed to understand the origin of high-energy events at the Sun which occasionally accelerate particles to such high energies that they can penetrate the Earth's atmosphere and be measured at ground level. Here we present calibration results of EPT-HET which show that EPT-HET will function as planned.

Relativistic high-current electron-beam stopping-power characterization in solids and plasmas: collisional versus resistive effects.

PubMed

Vauzour, B; Santos, J J; Debayle, A; Hulin, S; Schlenvoigt, H-P; Vaisseau, X; Batani, D; Baton, S D; Honrubia, J J; Nicolaï, Ph; Beg, F N; Benocci, R; Chawla, S; Coury, M; Dorchies, F; Fourment, C; d'Humières, E; Jarrot, L C; McKenna, P; Rhee, Y J; Tikhonchuk, V T; Volpe, L; Yahia, V

2012-12-21

We present experimental and numerical results on intense-laser-pulse-produced fast electron beams transport through aluminum samples, either solid or compressed and heated by laser-induced planar shock propagation. Thanks to absolute K(α) yield measurements and its very good agreement with results from numerical simulations, we quantify the collisional and resistive fast electron stopping powers: for electron current densities of ≈ 8 × 10(10) A/cm(2) they reach 1.5 keV/μm and 0.8 keV/μm, respectively. For higher current densities up to 10(12)A/cm(2), numerical simulations show resistive and collisional energy losses at comparable levels. Analytical estimations predict the resistive stopping power will be kept on the level of 1 keV/μm for electron current densities of 10(14)A/cm(2), representative of the full-scale conditions in the fast ignition of inertially confined fusion targets.

Interpretation of the photoelectron spectra of FeS(2)(-) by a multiconfiguration computational approach.

PubMed

Clima, Sergiu; Hendrickx, Marc F A

2007-11-01

The ground states of FeS(2) and FeS(2)(-), and several low-lying excited electronic states of FeS(2) that are responsible for the FeS(2)(-) photoelectron spectrum, are calculated. At the B3LYP level an open, quasi-linear [SFeS](-) conformation is found as the most stable structure, which is confirmed at the ab initio CASPT2 computational level. Both the neutral and the anionic unsaturated complexes possess high-spin electronic ground states. For the first time a complete assignment of the photoelectron spectrum of FeS(2)(-) is proposed. The lowest energy band in this spectrum is ascribed to an electron detachment from the two highest-lying 3dpi antibonding orbitals (with respect to the iron-sulfur bonding) of iron. The next-lowest experimental band corresponds to an electron removal from nonbonding, nearly pure sulfur orbitals. The two highest bands in the spectra are assigned as electron detachments from pi and sigma bonding mainly sulfur orbitals.

Highly sensitive, self-powered and wearable electronic skin based on pressure-sensitive nanofiber woven fabric sensor.

PubMed

Zhou, Yuman; He, Jianxin; Wang, Hongbo; Qi, Kun; Nan, Nan; You, Xiaolu; Shao, Weili; Wang, Lidan; Ding, Bin; Cui, Shizhong

2017-10-11

The wearable electronic skin with high sensitivity and self-power has shown increasing prospects for applications such as human health monitoring, robotic skin, and intelligent electronic products. In this work, we introduced and demonstrated a design of highly sensitive, self-powered, and wearable electronic skin based on a pressure-sensitive nanofiber woven fabric sensor fabricated by weaving PVDF electrospun yarns of nanofibers coated with PEDOT. Particularly, the nanofiber woven fabric sensor with multi-leveled hierarchical structure, which significantly induced the change in contact area under ultra-low load, showed combined superiority of high sensitivity (18.376 kPa -1 , at ~100 Pa), wide pressure range (0.002-10 kPa), fast response time (15 ms) and better durability (7500 cycles). More importantly, an open-circuit voltage signal of the PPNWF pressure sensor was obtained through applying periodic pressure of 10 kPa, and the output open-circuit voltage exhibited a distinct switching behavior to the applied pressure, indicating the wearable nanofiber woven fabric sensor could be self-powered under an applied pressure. Furthermore, we demonstrated the potential application of this wearable nanofiber woven fabric sensor in electronic skin for health monitoring, human motion detection, and muscle tremor detection.

Enzymatic cellulose oxidation is linked to lignin by long-range electron transfer

PubMed Central

Westereng, Bjørge; Cannella, David; Wittrup Agger, Jane; Jørgensen, Henning; Larsen Andersen, Mogens; Eijsink, Vincent G.H.; Felby, Claus

2015-01-01

Enzymatic oxidation of cell wall polysaccharides by lytic polysaccharide monooxygenases (LPMOs) plays a pivotal role in the degradation of plant biomass. While experiments have shown that LPMOs are copper dependent enzymes requiring an electron donor, the mechanism and origin of the electron supply in biological systems are only partly understood. We show here that insoluble high molecular weight lignin functions as a reservoir of electrons facilitating LPMO activity. The electrons are donated to the enzyme by long-range electron transfer involving soluble low molecular weight lignins present in plant cell walls. Electron transfer was confirmed by electron paramagnetic resonance spectroscopy showing that LPMO activity on cellulose changes the level of unpaired electrons in the lignin. The discovery of a long-range electron transfer mechanism links the biodegradation of cellulose and lignin and sheds new light on how oxidative enzymes present in plant degraders may act in concert. PMID:26686263

Recent advances in molecular electronics based on carbon nanotubes.

PubMed

Bourgoin, Jean-Philippe; Campidelli, Stéphane; Chenevier, Pascale; Derycke, Vincent; Filoramo, Arianna; Goffman, Marcelo F

2010-01-01

Carbon nanotubes (CNTs) have exceptional physical properties that make them one of the most promising building blocks for future nanotechnologies. They may in particular play an important role in the development of innovative electronic devices in the fields of flexible electronics, ultra-high sensitivity sensors, high frequency electronics, opto-electronics, energy sources and nano-electromechanical systems (NEMS). Proofs of concept of several high performance devices already exist, usually at the single device level, but there remain many serious scientific issues to be solved before the viability of such routes can be evaluated. In particular, the main concern regards the controlled synthesis and positioning of nanotubes. In our opinion, truly innovative use of these nano-objects will come from: (i) the combination of some of their complementary physical properties, such as combining their electrical and mechanical properties, (ii) the combination of their properties with additional benefits coming from other molecules grafted on the nanotubes, and (iii) the use of chemically- or bio-directed self-assembly processes to allow the efficient combination of several devices into functional arrays or circuits. In this article, we outline the main issues concerning the development of carbon nanotubes based electronics applications and review our recent results in the field.

Internet use and electronic gaming by children and adolescents with emotional and behavioural problems in Australia - results from the second Child and Adolescent Survey of Mental Health and Wellbeing.

PubMed

Rikkers, Wavne; Lawrence, David; Hafekost, Jennifer; Zubrick, Stephen R

2016-05-13

Concerns have been raised of a potential connection between excessive online activity outside the academic realm and increased levels of psychological distress in young people. Young Minds Matter: the second Australian Child and Adolescent Survey of Mental Health and Wellbeing provides estimates of the prevalence of online activity and allows an exploration of associations between this activity, a range of mental disorders, socio-demographic characteristics and risk taking behaviour. Based on a randomized nationally representative sample, a household survey of mental health and wellbeing (Young Minds Matter) was conducted in 2013-14. Interviews were conducted with 6,310 parents and carers of 4-17 year-olds (55 % response rate), together with self-report questionnaires completed by 2,967 11-17 year-olds in these households (89 % response rate). The survey identified a range of mental disorders and emotional problems using a variety of diagnostic tools, with the self-report including questions about use of the Internet and electronic games. Five behaviours were measured related to this activity, with 'problem behaviour' being defined as exhibiting at least four out of five behaviours. Levels of Internet use (98.9 %, CI 98.5-99.3 %) and electronic gaming (85.3 %, CI 83.9-86.6 %) were high, and 3.9 % (CI 3.2-4.6 %) of young people reported problem behaviour. The proportion of girls with very high levels of psychological distress and problem behaviour (41.8 %,CI 28.8-54.9 %) was twice that for boys (19.4 %, CI 7.7-31.1 %). Those engaging with a range of risk factors reported higher prevalence of problem behaviour than others. Youth who suffered from emotional problems or high levels of psychological distress spent the most time online or playing games. Multivariate analysis showed associations with problem behaviour and having attempted suicide, experiencing high to very high levels of psychological distress, using alcohol, and living in a poorly functioning family. It was not possible to determine the direction of the associations. There are links between problem behaviours associated with Internet use and electronic gaming, and mental disorders and risk-taking behaviour in young people. Further studies are required to determine whether these are precursors or sequelae.

Is the regulation of the electronic properties of organic molecules by polynuclear superhalogens more effective than that by mononuclear superhalogens? A high-level ab initio case study.

PubMed

Li, Miao-Miao; Li, Jin-Feng; Bai, Hongcun; Sun, Yin-Yin; Li, Jian-Li; Yin, Bing

2015-08-21

The regulation of the electronic properties of organic molecules induced by polynuclear superhalogens is theoretically explored here for sixteen composite structures. It is clearly indicated by the higher vertical electron detachment energy (VDE) that polynuclear superhalogens are more effective in regulating the electronic properties than mononuclear structures. However, this enhanced regulation is not only determined by superhalogens themselves but also related to the distribution of the extra electron of the final composites. The composites, in which the extra electron is mainly aggregated into the superhalogen moiety, will possess higher VDE values, as reported in the case of C1', 7.12 eV at the CCSD(T) level. This is probably due to the fact that, compared with organic molecules, superhalogens possess stronger attraction towards the extra electron and thus should lead to lower energies of the extra electrons and to higher VDE values eventually. Compared with CCSD(T), the Outer Valence Green's Function (OVGF) method fails completely for composite structures containing Cl atoms, while MP2 results are generally consistent in terms of the relative order of VDEs. Actually if the extra electron distribution of the systems could be approximated by the HOMO, the results at the OVGF level will be consistent with the CCSD(T) results. Conversely, the difference in VDEs between OVGF and CCSD(T) is significantly large. Besides superhalogen properties, the structures, relative stabilities and thermodynamic stabilities with respect to various fragmentation channels were also investigated for all the composite structures.

Work-related musculoskeletal disorders (WMDs) risk assessment at core assembly production of electronic components manufacturing company

NASA Astrophysics Data System (ADS)

Yahya, N. M.; Zahid, M. N. O.

2018-03-01

This study conducted to assess the work-related musculoskeletal disorders (WMDs) among the workers at core assembly production in an electronic components manufacturing company located in Pekan, Pahang, Malaysia. The study is to identify the WMDs risk factor and risk level. A set of questionnaires survey based on modified Nordic Musculoskeletal Disorder Questionnaires have been distributed to respective workers to acquire the WMDs risk factor identification. Then, postural analysis was conducted in order to measure the respective WMDs risk level. The analysis were based on two ergonomics assessment tools; Rapid Upper Limb Assessment (RULA) and Rapid Entire Body Assessment (REBA). The study found that 30 respondents out of 36 respondents suffered from WMDs especially at shoulder, wrists and lower back. The WMDs risk have been identified from unloading process, pressing process and winding process. In term of the WMDs risk level, REBA and RULA assessment tools have indicated high risk level to unloading and pressing process. Thus, this study had established the WMDs risk factor and risk level of core assembly production in an electronic components manufacturing company at Malaysia environment.

Rhombohedral Multilayer Graphene: A Magneto-Raman Scattering Study.

PubMed

Henni, Younes; Ojeda Collado, Hector Pablo; Nogajewski, Karol; Molas, Maciej R; Usaj, Gonzalo; Balseiro, Carlos A; Orlita, Milan; Potemski, Marek; Faugeras, Clement

2016-06-08

Graphene layers are known to stack in two stable configurations, namely, ABA or ABC stacking, with drastically distinct electronic properties. Unlike the ABA stacking, little has been done to experimentally investigate the electronic properties of ABC graphene multilayers. Here, we report on the first magneto optical study of a large ABC domain in a graphene multilayer flake, with ABC sequences exceeding 17 graphene sheets. ABC-stacked multilayers can be fingerprinted with a characteristic electronic Raman scattering response, which persists even at room temperatures. Tracing the magnetic field evolution of the inter Landau level excitations from this domain gives strong evidence for the existence of a dispersionless electronic band near the Fermi level, characteristic of such stacking. Our findings present a simple yet powerful approach to probe ABC stacking in graphene multilayer flakes, where this highly degenerated band appears as an appealing candidate to host strongly correlated states.

Novel Electronic Structures of Ru-pnictides RuPn (Pn = P, As, Sb)

NASA Astrophysics Data System (ADS)

Goto, H.; Toriyama, T.; Konishi, T.; Ohta, Y.

Density-functional-theory-based electronic structure calculations are made to consider the novel electronic states of Ru-pnictides RuP and RuAs where the intriguing phase transitions and superconductivity under doping of Rh have been reported. We find that there appear nearly degenerate flat bands just at the Fermi level in the high-temperature metallic phase of RuP and RuAs; the flat-band states come mainly from the 4dxy orbitals of Ru ions and the Rh doping shifts the Fermi level just above the flat bands. The splitting of the flat bands caused by their electronic instability may then be responsible for the observed phase transition to the nonmagnetic insulating phase at low temperatures. We also find that the band structure calculated for RuSb resembles that of the doped RuP and RuAs, which is consistent with experiment where superconductivity occurs in RuSb without Rh doping.

Low-Temperature Scanning Capacitance Probe for Imaging Electron Motion

NASA Astrophysics Data System (ADS)

Bhandari, S.; Westervelt, R. M.

2014-12-01

Novel techniques to probe electronic properties at the nanoscale can shed light on the physics of nanoscale devices. In particular, studying the scattering of electrons from edges and apertures at the nanoscale and imaging the electron profile in a quantum dot, have been of interest [1]. In this paper, we present the design and implementation of a cooled scanning capacitance probe that operates at liquid He temperatures to image electron waves in nanodevices. The conducting tip of a scanned probe microscope is held above the nanoscale structure, and an applied sample-to-tip voltage creates an image charge that is measured by a cooled charge amplifier [2] adjacent to the tip. The circuit is based on a low-capacitance, high- electron-mobility transistor (Fujitsu FHX35X). The input is a capacitance bridge formed by a low capacitance pinched-off HEMT transistor and tip-sample capacitance. We have achieved low noise level (0.13 e/VHz) and high spatial resolution (100 nm) for this technique, which promises to be a useful tool to study electronic behavior in nanoscale devices.

Packaging Technologies for High Temperature Electronics and Sensors

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Beheim, Glenn M.; Spry, David J.; Meredith, Roger D.

2013-01-01

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500 C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550 C. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500 C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500 C are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

Military Curriculum Materials for Vocational and Technical Education. Miniature/Microminiature Electronics Repair. CNTT W-100-0034B. Classroom Course 7-15.

ERIC Educational Resources Information Center

Ohio State Univ., Columbus. National Center for Research in Vocational Education.

These instructor materials (curriculum outline, lesson plans) and student guide for a high school-postsecondary level course in miniature/microminiature electronic repair are one of a number of military-developed curriculum packages selected for adaptation to vocational instruction and curriculum development in a civilian setting. The course…

Hexaazatrinaphthylene derivatives: Efficient electron-transporting materials with tunable energy levels for inverted perovskite solar cells

DOE PAGES

Zhao, Dongbing; Zhu, Zonglong; Kuo, Ming -Yu; ...

2016-06-08

Hexaazatrinaphthylene (HATNA) derivatives have been successfully shown to function as efficient electron-transporting materials (ETMs) for perovskite solar cells (PVSCs). The cells demonstrate a superior power conversion efficiency (PCE) of 17.6% with negligible hysteresis. Furthermore, this study provides one of the first nonfullerene small-moleculebased ETMs for high-performance p–i–n PVSCs.

Wide Bandgap Extrinsic Photoconductive Switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, James S.

2013-07-03

Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductivemore » switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.« less

Energetic Particle Observations from Fengyun-2G Satellite

NASA Astrophysics Data System (ADS)

Wang, C.

2017-12-01

Observations of high energy electrons and protons with High Energy Particle Instrument(HEPI) carried on the Fengyun-2G( FY-2G )satellite are presented. The instrument consists of two sets detectors- high energy electrons detector which can measure 200keV to greater than 4MeV electrons with eleven channels, and high energy protons and heavy ions detector which mainly senses incident flux of solar protons with seven channels from 4MeV to 300 MeV. The observation results showed both of the detectors can reach an accurate response to various disturbances and can provide refined particles data. Comparison of particles dynamic observations of FY2G satellite with GOES series satellites appears that energetic particle fluxes can enter into a coherent level on some quasi-quiet conditions, great difference occur on disturbances times, which can be helpful for data assimilation of multi-satellite as well as further research in more complicated magnetosphere energy particle dynamics.

New and unconventional approaches for advancing resolution in biological transmission electron microscopy by improving macromolecular specimen preparation and preservation.

PubMed

Massover, William H

2011-02-01

Resolution in transmission electron microscopy (TEM) now is limited by the properties of specimens, rather than by those of instrumentation. The long-standing difficulties in obtaining truly high-resolution structure from biological macromolecules with TEM demand the development, testing, and application of new ideas and unconventional approaches. This review concisely describes some new concepts and innovative methodologies for TEM that deal with unsolved problems in the preparation and preservation of macromolecular specimens. The selected topics include use of better support films, a more protective multi-component matrix surrounding specimens for cryo-TEM and negative staining, and, several quite different changes in microscopy and micrography that should decrease the effects of electron radiation damage; all these practical approaches are non-traditional, but have promise to advance resolution for specimens of biological macromolecules beyond its present level of 3-10 Å (0.3-1.0 nm). The result of achieving truly high resolution will be a fulfillment of the still unrealized potential of transmission electron microscopy for directly revealing the structure of biological macromolecules down to the atomic level. Published by Elsevier Ltd.

Antenna Electronics Concept for the Next-Generation Very Large Array

NASA Astrophysics Data System (ADS)

Shillue, Bill; Jackson, James; Selina, Rob

2018-01-01

The National Radio Astronomy Observatory (NRAO) is considering the scientific potential and technical feasibility of a next-generation VLA (ngVLA) with an emphasis on thermal imaging at milliarcsecond resolution. The preliminary goals for the ngVLA are to increase both the system sensitivity and angular resolution of the VLA tenfold and to cover a frequency range of 1.2-116 GHz.The design of the antenna electronics, reference signal distribution, and data transmission systems will be construction and operations cost drivers for the facility. The electronics must achieve a high level of performance, while maintaining low operation and maintenance costs and a high level of reliability. With the size of the array, design effort on manufacturability and integration of components can lead to reduced lifecycle costs. With current uncertainty in the feasibility of wideband receivers, and advancements in digitizer technology, the architecture should be scalable to the number of receiver bands and the speed and resolution of available digitizer ICs. The focus of the presentation will be a proposed architecture for the electronics system, parameter tradeoffs within the system specification, and areas where technical advances are required when compared to existing array designs.

Application of relativistic distorted-wave method to electron-impact excitation of highly charged Fe XXIV ion embedded in weakly coupled plasmas

NASA Astrophysics Data System (ADS)

Chen, Zhanbin

2018-05-01

The process of excitation of highly charged Fe XXIV ion embedded in weakly coupled plasmas by electron impact is studied, together with the subsequent radiative decay. For the target structure, the calculation is performed using the multiconfiguration Dirac-Hartree-Fock method incorporating the Debye-Hückel potential for the electron-nucleus interaction. Fine-structure levels of the 1s22p and 1s2s2p configurations and the transition properties among these levels are presented over a wide range of screening parameters. For the collision dynamics, the distorted-wave method in the relativistic frame is adopted to include the effect of plasma background, in which the interparticle interactions in the system are described by screened interactions of the Debye-Hückel type. The continuum wave function of the projectile electron is obtained by solving the modified Dirac equations. The influence of plasma strength on the cross section, the linear polarization, and the angular distribution of x-ray photon emission are investigated in detail. Comparison of the present results with experimental data and other theoretical predictions, when available, is made.

Effects of Shock and Turbulence Properties on Electron Acceleration

NASA Astrophysics Data System (ADS)

Qin, G.; Kong, F.-J.; Zhang, L.-H.

2018-06-01

Using test particle simulations, we study electron acceleration at collisionless shocks with a two-component model turbulent magnetic field with slab component including dissipation range. We investigate the importance of the shock-normal angle θ Bn, magnetic turbulence level {(b/{B}0)}2, and shock thickness on the acceleration efficiency of electrons. It is shown that at perpendicular shocks the electron acceleration efficiency is enhanced with the decrease of {(b/{B}0)}2, and at {(b/{B}0)}2=0.01 the acceleration becomes significant due to a strong drift electric field with long time particles staying near the shock front for shock drift acceleration (SDA). In addition, at parallel shocks the electron acceleration efficiency is increasing with the increase of {(b/{B}0)}2, and at {(b/{B}0)}2=10.0 the acceleration is very strong due to sufficient pitch-angle scattering for first-order Fermi acceleration, as well as due to the large local component of the magnetic field perpendicular to the shock-normal angle for SDA. On the other hand, the high perpendicular shock acceleration with {(b/{B}0)}2=0.01 is stronger than the high parallel shock acceleration with {(b/{B}0)}2=10.0, the reason might be the assumption that SDA is more efficient than first-order Fermi acceleration. Furthermore, for oblique shocks, the acceleration efficiency is small no matter whether the turbulence level is low or high. Moreover, for the effect of shock thickness on electron acceleration at perpendicular shocks, we show that there exists the bendover thickness, L diff,b. The acceleration efficiency does not noticeably change if the shock thickness is much smaller than L diff,b. However, if the shock thickness is much larger than L diff,b, the acceleration efficiency starts to drop abruptly.

Dose-rate effect of ultrashort electron beam radiation on DNA damage and repair in vitro.

PubMed

Babayan, Nelly; Hovhannisyan, Galina; Grigoryan, Bagrat; Grigoryan, Ruzanna; Sarkisyan, Natalia; Tsakanova, Gohar; Haroutiunian, Samvel; Aroutiounian, Rouben

2017-11-01

Laser-generated electron beams are distinguished from conventional accelerated particles by ultrashort beam pulses in the femtoseconds to picoseconds duration range, and their application may elucidate primary radiobiological effects. The aim of the present study was to determine the dose-rate effect of laser-generated ultrashort pulses of 4 MeV electron beam radiation on DNA damage and repair in human cells. The dose rate was increased via changing the pulse repetition frequency, without increasing the electron energy. The human chronic myeloid leukemia K-562 cell line was used to estimate the DNA damage and repair after irradiation, via the comet assay. A distribution analysis of the DNA damage was performed. The same mean level of initial DNA damages was observed at low (3.6 Gy/min) and high (36 Gy/min) dose-rate irradiation. In the case of low-dose-rate irradiation, the detected DNA damages were completely repairable, whereas the high-dose-rate irradiation demonstrated a lower level of reparability. The distribution analysis of initial DNA damages after high-dose-rate irradiation revealed a shift towards higher amounts of damage and a broadening in distribution. Thus, increasing the dose rate via changing the pulse frequency of ultrafast electrons leads to an increase in the complexity of DNA damages, with a consequent decrease in their reparability. Since the application of an ultrashort pulsed electron beam permits us to describe the primary radiobiological effects, it can be assumed that the observed dose-rate effect on DNA damage/repair is mainly caused by primary lesions appearing at the moment of irradiation. © The Author 2017. Published by Oxford University Press on behalf of The Japan Radiation Research Society and Japanese Society for Radiation Oncology.

Satisfying STEM Education Using the Arduino Microprocessor in C Programming

NASA Astrophysics Data System (ADS)

Hoffer, Brandyn M.

There exists a need to promote better Science Technology Engineering and Math (STEM) education at the high school level. To satisfy this need a series of hands-on laboratory assignments were created to be accompanied by 2 educational trainers that contain various electronic components. This project provides an interdisciplinary, hands-on approach to teaching C programming that meets several standards defined by the Tennessee Board of Education. Together the trainers and lab assignments also introduce key concepts in math and science while allowing students hands-on experience with various electronic components. This will allow students to mimic real world applications of using the C programming language while exposing them to technology not currently introduced in many high school classrooms. The developed project is targeted at high school students performing at or above the junior level and uses the Arduino Mega open-source Microprocessor and software as the primary control unit.

Nitric oxide excited under auroral conditions: Excited state densities and band emissions

NASA Astrophysics Data System (ADS)

Cartwright, D. C.; Brunger, M. J.; Campbell, L.; Mojarrabi, B.; Teubner, P. J. O.

2000-09-01

Electron impact excitation of vibrational levels in the ground electronic state and nine excited electronic states in NO has been simulated for an IBC II aurora (i.e., ˜10 kR in 3914 Å radiation) in order to predict NO excited state number densities and band emission intensities. New integral electron impact excitation cross sections for NO were combined with a measured IBC II auroral secondary electron distribution, and the vibrational populations of 10 NO electronic states were determined under conditions of statistical equilibrium. This model predicts an extended vibrational distribution in the NO ground electronic state produced by radiative cascade from the seven higher-lying doublet excited electronic states populated by electron impact. In addition to significant energy storage in vibrational excitation of the ground electronic state, both the a 4Π and L2 Φ excited electronic states are predicted to have relatively high number densities because they are only weakly connected to lower electronic states by radiative decay. Fundamental mode radiative transitions involving the lowest nine excited vibrational levels in the ground electronic state are predicted to produce infrared (IR) radiation from 5.33 to 6.05 μm with greater intensity than any single NO electronic emission band. Fundamental mode radiative transitions within the a 4Π electronic state, in the 10.08-11.37 μm region, are predicted to have IR intensities comparable to individual electronic emission bands in the Heath and ɛ band systems. Results from this model quantitatively predict the vibrational quantum number dependence of the NO IR measurements of Espy et al. [1988].

Functional Requirements for an Electronic Work Package System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oxstrand, Johanna H.

This document provides a set of high level functional requirements for a generic electronic work package (eWP) system. The requirements have been identified by the U.S. nuclear industry as a part of the Nuclear Electronic Work Packages - Enterprise Requirements (NEWPER) initiative. The functional requirements are mainly applied to eWP system supporting Basic and Moderate types of smart documents, i.e., documents that have fields for recording input such as text, dates, numbers, and equipment status, and documents which incorporate additional functionalities such as form field data “type“ validation (e.g. date, text, number, and signature) of data entered and/or self-populate basicmore » document information (usually from existing host application meta data) on the form when the user first opens it. All the requirements are categorized by the roles; Planner, Supervisor, Craft, Work Package Approval Reviewer, Operations, Scheduling/Work Control, and Supporting Functions. The categories Statistics, Records, Information Technology are also included used to group the requirements. All requirements are presented in Section 2 through Section 11. Examples of more detailed requirements are provided for the majority of high level requirements. These examples are meant as an inspiration to be used as each utility goes through the process of identifying their specific requirements. The report’s table of contents provides a summary of the high level requirements.« less

Saturated fluorescence measurements of the hydroxyl radical in laminar high-pressure flames

NASA Technical Reports Server (NTRS)

Carter, Campbell D.; King, Galen B.; Laurendeau, Normand M.

1990-01-01

The efficacy of laser saturated fluorescence (LSF) for OH concentration measurements in high pressure flames was studied theoretically and experimentally. Using a numerical model describing the interaction of hydroxyl with nonuniform laser excitation, the effect of pressure on the validity of the balanced cross-rate model was studied along with the sensitivity of the depopulation of the laser-coupled levels to the ratio of rate coefficients describing: (1) electronic quenching to (sup 2) Sigma (+) (v double prime greater than 0), and (2) vibrational relaxation from v double prime greater than 0 to v double prime = 0. At sufficiently high pressures and near-saturated conditions, the total population of the laser-coupled levels reaches an asymptotic value, which is insensitive to the degree of saturation. When the ratio of electronic quenching to vibrational relaxation is small and the rate of coefficients for rotational transfer in the ground and excited electronic states are nearly the same, the balanced cross-rate model remains a good approximation for all pressures. When the above ratio is large, depopulation of the laser-coupled levels becomes significant at high pressures, and thus the balanced cross-rate model no longer holds. Under these conditions, however, knowledge of the depletion of the laser-coupled levels can be used to correct the model. A combustion facility for operation up to 20 atm was developed to allow LSF measurements of OH in high pressure flames. Using this facility, partial saturation in laminar high pressure (less than or equal to 12.3 atm) C2H6/O2/N2 flames was achieved. To evaluate the limits of the balanced cross-rate model, absorption and calibrated LSF measurements at 3.1 and 6.1 atm were compared. The fluorescence voltages were calibrated with absorption measurements in an atmospheric flame and corrected for their finite sensitivity to quenching with: (1) estimated quenching rate coefficients, and (2) an in situ measurement from a technique employing two fluorescence detection geometries.

Magnetophonon resonance in double quantum wells

NASA Astrophysics Data System (ADS)

Ploch, D.; Sheregii, E. M.; Marchewka, M.; Wozny, M.; Tomaka, G.

2009-05-01

The experimental results obtained for the magnetotransport in pulsed magnetic fields in the InGaAs/InAlAs double quantum well (DQW) structures of two different shapes of wells and different values of the electron density are reported. The magnetophonon resonance (MPR) was observed for both types of structures within the temperature range 77-125 K. Four kinds of LO phonons are taken into account to interpret the MPR oscillations in the DQW and a method of the Landau level calculation in the DQW is elaborated for this aim. The peculiarity of the MPR in the DQW is the large number of the Landau levels caused by SAS splitting of the electron states (splitting on the symmetric and anti-symmetric states) and the large number of the phonon assistance electron transitions between Landau levels. The significant role of the carrier statistics is shown too. The behavior of the electron states in the DQWs at comparably high temperatures has been studied using the MPR. It is shown that the Huang and Manasreh [Manasreh [Phys. Rev. B 54, 2044 (1996)] model involving screening of exchange interaction is confirmed.

Rational design of metal-organic electronic devices: A computational perspective

NASA Astrophysics Data System (ADS)

Chilukuri, Bhaskar

Organic and organometallic electronic materials continue to attract considerable attention among researchers due to their cost effectiveness, high flexibility, low temperature processing conditions and the continuous emergence of new semiconducting materials with tailored electronic properties. In addition, organic semiconductors can be used in a variety of important technological devices such as solar cells, field-effect transistors (FETs), flash memory, radio frequency identification (RFID) tags, light emitting diodes (LEDs), etc. However, organic materials have thus far not achieved the reliability and carrier mobility obtainable with inorganic silicon-based devices. Hence, there is a need for finding alternative electronic materials other than organic semiconductors to overcome the problems of inferior stability and performance. In this dissertation, I research the development of new transition metal based electronic materials which due to the presence of metal-metal, metal-pi, and pi-pi interactions may give rise to superior electronic and chemical properties versus their organic counterparts. Specifically, I performed computational modeling studies on platinum based charge transfer complexes and d 10 cyclo-[M(mu-L)]3 trimers (M = Ag, Au and L = monoanionic bidentate bridging (C/N~C/N) ligand). The research done is aimed to guide experimental chemists to make rational choices of metals, ligands, substituents in synthesizing novel organometallic electronic materials. Furthermore, the calculations presented here propose novel ways to tune the geometric, electronic, spectroscopic, and conduction properties in semiconducting materials. In addition to novel material development, electronic device performance can be improved by making a judicious choice of device components. I have studied the interfaces of a p-type metal-organic semiconductor viz cyclo-[Au(mu-Pz)] 3 trimer with metal electrodes at atomic and surface levels. This work was aimed to guide the device engineers to choose the appropriate metal electrodes considering the chemical interactions at the interface. Additionally, the calculations performed on the interfaces provided valuable insight into binding energies, charge redistribution, change in the energy levels, dipole formation, etc., which are important parameters to consider while fabricating an electronic device. The research described in this dissertation highlights the application of unique computational modeling methods at different levels of theory to guide the experimental chemists and device engineers toward a rational design of transition metal based electronic devices with low cost and high performance.

Study of runaway electrons using dosimetry of hard x-ray radiations in Damavand tokamak

NASA Astrophysics Data System (ADS)

Rasouli, C.; Pourshahab, B.; Hosseini Pooya, S. M.; Orouji, T.; Rasouli, H.

2014-05-01

In this work several studies have been conducted on hard x-ray emissions of Damavand tokamak based on radiation dosimetry using the Thermoluminescence method. The goal was to understand interactions of runaway electrons with plasma particles, vessel wall, and plasma facing components. Total of 354 GR-200 (LiF:Mg,Cu,P) thermoluminescence dosimeter (TLD) crystals have been placed on 118 points - three TLDs per point - to map hard x-ray radiation doses on the exterior of the vacuum vessel. Results show two distinctive levels of x-ray radiations doses on the exterior of the vessel. The low-dose area on which measured dose is about 0.5 mSv/shot. In the low-dose area there is no particular component inside the vessel. On the contrary, on high-dose area of the vessel, x-ray radiations dose exceeds 30 mSv/shot. The high-dose area coincides with the position of limiters, magnetic probe ducts, and vacuum vessel intersections. Among the high-dose areas, the highest level of dose is measured in the position of the limiter, which could be due to its direct contact with the plasma column and with runaway electrons. Direct collisions of runaway electrons with the vessel wall and plasma facing components make a major contribution for production of hard x-ray photons in Damavand tokamak.

Study of runaway electrons using dosimetry of hard x-ray radiations in Damavand tokamak.

PubMed

Rasouli, C; Pourshahab, B; Hosseini Pooya, S M; Orouji, T; Rasouli, H

2014-05-01

In this work several studies have been conducted on hard x-ray emissions of Damavand tokamak based on radiation dosimetry using the Thermoluminescence method. The goal was to understand interactions of runaway electrons with plasma particles, vessel wall, and plasma facing components. Total of 354 GR-200 (LiF:Mg,Cu,P) thermoluminescence dosimeter (TLD) crystals have been placed on 118 points--three TLDs per point--to map hard x-ray radiation doses on the exterior of the vacuum vessel. Results show two distinctive levels of x-ray radiations doses on the exterior of the vessel. The low-dose area on which measured dose is about 0.5 mSv/shot. In the low-dose area there is no particular component inside the vessel. On the contrary, on high-dose area of the vessel, x-ray radiations dose exceeds 30 mSv/shot. The high-dose area coincides with the position of limiters, magnetic probe ducts, and vacuum vessel intersections. Among the high-dose areas, the highest level of dose is measured in the position of the limiter, which could be due to its direct contact with the plasma column and with runaway electrons. Direct collisions of runaway electrons with the vessel wall and plasma facing components make a major contribution for production of hard x-ray photons in Damavand tokamak.

Electronic and Ionic Conductors from Ordered Microporous Materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dincă, Mircea

The proposed work aimed to establish metal-organic frameworks (MOFs) as new classes of high-surface area microporous electronic and ionic conductors. MOFs are crystalline materials with pore sizes ranging from 0.2 to ~ 2 nm (or larger for the latter) defined by inorganic or organic building blocks connected by rigid organic linkers. Myriad applications have been found or proposed for these materials, yet those that require electron transport or conductivity in combination with permanent porosity still lag behind because the vast majority of known frameworks are electrical insulators. Prior to our proposal and subsequent work, there were virtually no studies exploringmore » the possibility of electronic delocalization in these materials. Therefore, our primary goal was to understand and control, at a fundamental level, the electron and ion transport properties of this class of materials, with no specific application proposed, although myriad applications could be envisioned for high surface area conductors. Our goals directly addressed one of the DOE-identified Grand Challenges for Basic Energy Sciences: designing perfect atom- and energy-efficient syntheses of revolutionary new forms of matter with tailored properties. Indeed, the proposed work is entirely synthetic in nature; owing to the molecular nature of the building blocks in MOFs, there is the possibility of unprecedented control over the structure and properties of solid crystalline matter. The goals also tangentially addressed the Grand Challenge of controlling materials processes at the level of electrons: the scope of our program is to create new materials where charges (electrons and/or ions) move according to predefined pathways.« less

Biodistribution of modular nanotransporter carrying Auger electron emitter and targeted at melanoma cells in murine tumor model

NASA Astrophysics Data System (ADS)

Vorontsova, M. S.; Morozova, N. B.; Karmakova, T. A.; Rosenkranz, A. A.; Slastnikova, T. A.; Petriev, V. M.; Smoryzanova, O. A.; Tischenko, V. K.; Yakubovskaya, R. I.; Kaprin, A. D.; Sobolev, A. S.

2017-09-01

Recombinant modular nanotransporter containing α-melanocyte-stimulating hormone peptide sequence (MNT-MSH) as a ligand module was designed for nucleus-targeted delivery of cytotoxic agents into melanoma cells. MNT-MSH radiolabeled with Auger electron emitter (111In-NOTA-MNT-MSH) showed a high antitumor efficacy in mice bearing syngeneic melanoma after intratumoral (i.t.) injection. This study is aimed at evaluating the biodistribution of the radioconjugate in melanoma tumor model in vivo. 111In-NOTA-MNT-MSH was administered i.t. in C57Bl/6j mice bearing subcutaneously implanted B16-F1 murine melanoma cells, expressing high levels of MCR1. The tissue uptake of radioactivity was determined ex vivo by γ-counter measurements. The intravenous route of administration did not provide a desirable level of radioactivity accumulation in the tumor, possibly, due to a high uptake of the transporter in liver tissue. After i.t. administration 111In-NOTA-MNT-MSH provided a high local retention of radionuclide, ranged from 400 to 350 %ID/g within at least 48 hours post-injection. MNT containing Auger electron emitter and α-MSH peptide as vector ligand could be a promising basis for radiopharmaceutical preparations intended for melanoma treatment.

High-pressure studies on electronic and mechanical properties of FeBO3 (B = Ti, Mn, Cr) ceramics - a first-principles study

NASA Astrophysics Data System (ADS)

Kishore, N.; Nagarajan, V.; Chandiramouli, R.

2018-04-01

Using the density functional theory (DFT) method, the electronic and mechanical properties of perovskites FeBO3 (B = Ti, Mn, Cr) nanostructures were studied in the pressure range of 0-100 GPa. The band structure studies show the change in the band structure upon substitution of different B cation in FeBO3 perovskite structure. The density of states spectrum gives the perception of change in the electronic properties of FeBO3 with the substitution of B cation. The bulk, shear and Young's moduli were calculated and an increase in the moduli is noticed. Moreover, the hardness increases under high pressure. The high-pressure studies of FeBO3 perovskite nanostructures are explored at atomistic level. The findings show that ductility and hardness of FeBO3 get increased upon an increase in the applied pressure. The substitution of Ti, Mn and Cr on FeBO3 shows a significant change in the electronic and mechanical properties.

Time-dependent multi-dimensional simulation studies of the electron output scheme for high power FELs

NASA Astrophysics Data System (ADS)

Hahn, S. J.; Fawley, W. M.; Kim, K. J.; Edighoffer, J. A.

1994-12-01

The authors examine the performance of the so-called electron output scheme recently proposed by the Novosibirsk group. In this scheme, the key role of the FEL oscillator is to induce bunching, while an external undulator, called the radiator, then outcouples the bunched electron beam to optical energy via coherent emission. The level of the intracavity power in the oscillator is kept low by employing a transverse optical klystron (TOK) configuration, thus avoiding excessive thermal loading on the cavity mirrors. Time-dependent effects are important in the operation of the electron output scheme because high gain in the TOK oscillator leads to sideband instabilities and chaotic behavior. The authors have carried out an extensive simulation study by using 1D and 2D time-dependent codes and find that proper control of the oscillator cavity detuning and cavity loss results in high output bunching with a narrow spectral bandwidth. Large cavity detuning in the oscillator and tapering of the radiator undulator is necessary for the optimum output power.

Aircraft skin cooling system for thermal management of onboard high power electronic equipment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hashemi, A.; Dyson, E.

1996-12-31

Integration of high-power electronic devices into existing aircraft, while minimizing the impact of additional heat load on the environmental control system of the aircraft, requires innovative approaches. One such approach is to reject heat through the aircraft skin by use of internal skin ducts with enhanced surfaces. This approach requires a system level consideration of the effect of cooling ducts, inlets and outlets on the performance of the electronic equipment and effectiveness of the heat rejection system. This paper describes the development of a system-level model to evaluate the performance of electronic equipment in an aircraft cabin and heat rejectionmore » through the skin. In this model, the outer surface of the fuselage is treated as a heat exchanger. Hot air from an equipment exhaust plenum is drawn into a series of baffled ducts within the fuselage support structure, where the heat is rejected, and then recirculated into the cabin. The cooler air form the cabin is then drawn into the electronic equipment. The aircraft air conditioning unit is also modeled to provide chilled air directly into the cabin. In addition, this paper describes a series of tests which were performed to verify the model assumptions for heat dissipation from and air flow through the equipment. The tests were performed using the actual electronic equipment in a representative cabin configuration. Results indicate very good agreement between the analytical calculations for the design point and model predictions.« less

Organophosphorus flame retardants (PFRs) and plasticizers in house and car dust and the influence of electronic equipment.

PubMed

Brandsma, Sicco H; de Boer, Jacob; van Velzen, Martin J M; Leonards, Pim E G

2014-12-01

All nine PFRs studied were detected in house and car dust from the Netherlands with the exception of tris(butyl) phosphate (TNBP) and tris(isobutyl) phosphate (TIBP) in car dust. Tris(2-butoxyethyl) phosphate (TBOEP, median 22 μg g(-1)) was dominant in house dust collected around and on electronics followed by tris(2-chloroisopropyl) phosphate (TCIPP, median 1.3 μg g(-1)), tris(2-chloroethyl) phosphate (TCEP, median 1.3 μg g(-1)) and tris(phenyl) phosphate (TPHP, median 0.8 μg g(-1)). Levels of TPHP and tris(methylphenyl) phosphate (TMPP, also known as TCP) in house dust on electronics were significantly higher than in house dust collected around electronics, suggesting that electronic equipment has limited contribution to the PFR levels in house dust, with the exception of TPHP and TMPP. Car dust was dominated by tris(1,3-dichloroisopropyl) phosphate (TDCIPP) with the highest levels found in dust collected from the car seats (1100 μg g(-1)). The mean TDCIPP and TCIPP levels observed in car dust were significantly higher than the levels observed in dust collected around electronics. Significantly higher mean TMPP levels in dust taken from car seats were found compared to dust collected around the equipment (p<0.05). This is probably influenced by the use of TDCIPP, TCIPP in polyurethane foam (car seats) and the use of TMPP as plasticizer in car interiors. Worldwide four PFR patterns were observed in house dust. The PFR pattern in the Netherlands of TDCIPP, TMPP, TCEP, TCIPP and TPHP in house dust is comparable to the pattern found in six other countries, which may point to identical sources of these PFRs in the indoor environment. However, the PFR levels between the countries and within countries showed high variation. Copyright © 2014 Elsevier Ltd. All rights reserved.

High-energy coherent terahertz radiation emitted by wide-angle electron beams from a laser-wakefield accelerator

NASA Astrophysics Data System (ADS)

Yang, Xue; Brunetti, Enrico; Jaroszynski, Dino A.

2018-04-01

High-charge electron beams produced by laser-wakefield accelerators are potentially novel, scalable sources of high-power terahertz radiation suitable for applications requiring high-intensity fields. When an intense laser pulse propagates in underdense plasma, it can generate femtosecond duration, self-injected picocoulomb electron bunches that accelerate on-axis to energies from 10s of MeV to several GeV, depending on laser intensity and plasma density. The process leading to the formation of the accelerating structure also generates non-injected, sub-picosecond duration, 1–2 MeV nanocoulomb electron beams emitted obliquely into a hollow cone around the laser propagation axis. These wide-angle beams are stable and depend weakly on laser and plasma parameters. Here we perform simulations to characterise the coherent transition radiation emitted by these beams if passed through a thin metal foil, or directly at the plasma–vacuum interface, showing that coherent terahertz radiation with 10s μJ to mJ-level energy can be produced with an optical to terahertz conversion efficiency up to 10‑4–10‑3.

Direct electron injection into an oxide insulator using a cathode buffer layer

PubMed Central

Lee, Eungkyu; Lee, Jinwon; Kim, Ji-Hoon; Lim, Keon-Hee; Seok Byun, Jun; Ko, Jieun; Dong Kim, Young; Park, Yongsup; Kim, Youn Sang

2015-01-01

Injecting charge carriers into the mobile bands of an inorganic oxide insulator (for example, SiO2, HfO2) is a highly complicated task, or even impossible without external energy sources such as photons. This is because oxide insulators exhibit very low electron affinity and high ionization energy levels. Here we show that a ZnO layer acting as a cathode buffer layer permits direct electron injection into the conduction bands of various oxide insulators (for example, SiO2, Ta2O5, HfO2, Al2O3) from a metal cathode. Studies of current–voltage characteristics reveal that the current ohmically passes through the ZnO/oxide-insulator interface. Our findings suggests that the oxide insulators could be used for simply fabricated, transparent and highly stable electronic valves. With this strategy, we demonstrate an electrostatic discharging diode that uses 100-nm SiO2 as an active layer exhibiting an on/off ratio of ∼107, and protects the ZnO thin-film transistors from high electrical stresses. PMID:25864642

Superstrong field science

NASA Astrophysics Data System (ADS)

Tajima, T.; Mourou, G.

2002-04-01

Over the past fifteen years we have seen a surge in our ability to produce high intensities, five to six orders of magnitude higher than was possible before. At these intensities, particles, electrons and protons, acquire kinetic energy in the mega-electron-volt range through interaction with intense laser fields. This opens a new age for the laser, the age of nonlinear relativistic optics coupling even with nuclear physics. We suggest a path to reach an extremely high-intensity level 1026-28 W/cm2 in the coming decade, much beyond the current and near future intensity regime 1023 W/cm2, taking advantage of the megajoule laser facilities. Such a laser at extreme high intensity could accelerate particles to frontiers of high energy, tera-electron-volt and peta-electron-volt, and would become a tool of fundamental physics encompassing particle physics, gravitational physics, nonlinear field theory, ultrahigh-pressure physics, astrophysics, and cosmology. Such a laser intensity may also be very beneficial to an alternative, more direct approach of fast ignition in laser fusion. We suggest a new possibility to explore this. .

Strong electrically tunable MoTe2/graphene van der Waals heterostructures for high-performance electronic and optoelectronic devices

NASA Astrophysics Data System (ADS)

Wang, Feng; Yin, Lei; Wang, Zhenxing; Xu, Kai; Wang, Fengmei; Shifa, Tofik Ahmed; Huang, Yun; Wen, Yao; Jiang, Chao; He, Jun

2016-11-01

MoTe2 is an emerging two-dimensional layered material showing ambipolar/p-type conductivity, which makes it an important supplement to n-type two-dimensional layered material like MoS2. However, the properties based on its van der Waals heterostructures have been rarely studied. Here, taking advantage of the strong Fermi level tunability of monolayer graphene (G) and the feature of van der Waals interfaces that is free from Fermi level pinning effect, we fabricate G/MoTe2/G van der Waals heterostructures and systematically study the electronic and optoelectronic properties. We demonstrate the G/MoTe2/G FETs with low Schottky barriers for both holes (55.09 meV) and electrons (122.37 meV). Moreover, the G/MoTe2/G phototransistors show high photoresponse performances with on/off ratio, responsivity, and detectivity of ˜105, 87 A/W, and 1012 Jones, respectively. Finally, we find the response time of the phototransistors is effectively tunable and a mechanism therein is proposed to explain our observation. This work provides an alternative choice of contact for high-performance devices based on p-type and ambipolar two-dimensional layered materials.

Statistical properties of radiation power levels from a high-gain free-electron laser at and beyond saturation

NASA Astrophysics Data System (ADS)

Schroeder, C. B.; Fawley, W. M.; Esarey, E.

2003-07-01

We investigate the statistical properties (e.g., shot-to-shot power fluctuations) of the radiation from a high-gain free-electron laser (FEL) operating in the nonlinear regime. We consider the case of an FEL amplifier reaching saturation whose shot-to-shot fluctuations in input radiation power follow a gamma distribution. We analyze the corresponding output power fluctuations at and beyond saturation, including beam energy spread effects, and find that there are well-characterized values of undulator length for which the fluctuations reach a minimum.

Core List of Astronomy and Physics Journals

NASA Astrophysics Data System (ADS)

Bryson, Liz; Fortner, Diane; Yorks, Pamela

This is a list of highly-used and highly-cited physics and astronomy journals. "Use" is measured largely on paper-journal counts from selective academic research-level libraries. Citation count titles are drawn from Institute for Scientific Information (ISI) data. Recognition is given to entrepreneurial electronic-only or new-style electronic journals. Selective news, magazine, and general science journals are omitted. The compilers welcome questions, suggestions for additions, or other advice. Comments may be sent c/o Diane Fortner, Physics Library, University of California, Berkeley. Dfortner@library.berkeley.edu

Ionospheric variations during sudden stratospheric warming in the high- and mid-latitude regions

NASA Astrophysics Data System (ADS)

Yasyukevich, Anna; Voeykov, Sergey; Mylnikova, Anna

2017-04-01

The ionospheric dynamic in the high- and middle-latitude regions during the periods of sudden stratospheric warmings (SSW) was studied by using the international network of phase dual-frequency GPS/GLONASS receivers and the vertical sounding data. Twelve SSW events that occurred in the Northern Hemisphere 2006 through 2013 were considered. In order to identify the possible response of the ionosphere to SSW events, we carried out the analysis of the total electron (TEC) and the F2-layer maximum electron density (NmF2) deviations from the background level. We have also studied changes of the level of total electron content (TEC) wave-like variations characterized by a special index WTEC. The index reflects the intensity of medium- and large-scale traveling ionospheric disturbances. The dynamics of the high- and middle-latitude ionosphere at the points near the SSW areas was found to differ from the regular. For a large number of events, it is shown that, despite quiet geomagnetic conditions, a noticeable decrease in the NmF2 and TEC values (by 5-10% relative to the background level) is observed during the SSW evolution and maximum stages. On the contrary, for 10-20 days after the SSW maxima, NmF2 and TEC significantly exceed the monthly averaged values. Moreover, these electron density changes are observed for both strong and weak stratospheric warmings, and are recorded mainly during daytime. The observed SSW effects in the polar and mid-latitude ionosphere are assumed to be probably associated with the changes in the neutral composition at the thermospheric heights that affect the F2-layer electron density. The study is supported by the Russian Foundation for Basic Research under Grant No. 16-35-60018, as well as by the RF President Grant of Public Support for RF Leading Scientific Schools (NSh-6894.2016.5).

Resolving the Mystery of Transport Within Internal Transport Barriers

NASA Astrophysics Data System (ADS)

Staebler, G. M.

2013-10-01

The Trapped Gyro-Landau Fluid (TGLF) quasilinear model, which is calibrated to approximate non-linear gyro-kinetic turbulence simulations, is now able to predict the electron density, electron and ion temperatures and ion toroidal rotation simultaneously for internal transport barrier (ITB) discharges in excellent agreement with data from the DIII-D tokamak. This is a strong validation of gyro-kinetic theory of ITBs, requiring multiple instabilities responsible for transport in different channels at different scales. Inside the ITB, the ion energy transport is observed to be reduced to the neoclassical level which is consistent with the theory of turbulence suppression by E × B velocity shear acting on low wavenumber turbulence. The electron energy transport is observed to be far above the neoclassical level which is consistent with electron energy transport due to high wavenumber electron temperature gradient (ETG) modes. Since the ETG modes do not produce particle and ion momentum transport, and low wavenumber modes are suppressed, these channels are expected to be reduced to the neoclassical level in striking disagreement with experimental measurements. A possible resolution of this conundrum was found in 2005 when gyro-kinetic turbulence simulations showed that the parallel velocity shear driven Kelvin-Helmholtz (KH) mode can arrest the suppression of transport by the shear in the E × B velocity Doppler shift at high toroidal flow shear. The success of TGLF in predicting ITB transport is due to the inclusion of ion gyro-radius scale modes that become dominant at high E × B shear and to recent improvements to TGLF that allow the KH mode to be faithfully modeled. The resolution of this long-standing mystery of the missing particle and momentum transport in an ITB is the result of the steady advances in gyro-kinetic simulations and quasilinear modeling. Supported by the US Department of Energy under DE-FG02-95ER54309.

Analysis of strong ionospheric scintillation events measured by means of GPS signals at low latitudes during disturbed conditions

NASA Astrophysics Data System (ADS)

Forte, B.

2012-08-01

Drifting structures characterized by inhomogeneities in the spatial electron density distribution at ionospheric heights cause the scintillation of radio waves propagating through. The fractional electron density fluctuations and the corresponding scintillation levels may reach extreme values at low latitudes during high solar activity. Different levels of scintillation were observed on experimental data collected in the Asian sector at low latitudes by means of a GPS dual frequency receiver under moderate solar activity (2005). The GPS receiver used in these campaigns was particularly modified in firmware in order to record power estimates on the C/A code as well as on the carriers L1 and L2. Strong scintillation activity was recorded in the post-sunset period (saturatingS4 and SI as high as 20 dB). Spectral modifications and broadening was observed during high levels of scintillation possibly indicating refractive scattering taking place instead of diffractive scattering. A possible interpretation of those events was attempted on the basis of the refractive scattering theory developed by Uscinski (1968) and Booker and MajidiAhi (1981).

Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon

NASA Astrophysics Data System (ADS)

Schmidt, Jan; Cuevas, Andrés

1999-09-01

In order to study the electronic properties of the recombination centers responsible for the light-induced carrier lifetime degradation commonly observed in high-purity boron-doped Czochralski (Cz) silicon, injection-level dependent carrier lifetime measurements are performed on a large number of boron-doped p-type Cz silicon wafers of various resistivities (1-31 Ω cm) prior to and after light degradation. The measurement technique used is the contactless quasi-steady-state photoconductance method, allowing carrier lifetime measurements over a very broad injection range between 1012 and 1017cm-3. To eliminate all recombination channels not related to the degradation effect, the difference of the inverse lifetimes measured after and before light degradation is evaluated. A detailed analysis of the injection level dependence of the carrier lifetime change using the Shockley-Read-Hall theory shows that the fundamental recombination center created during illumination has an energy level between Ev+0.35 and Ec-0.45 eV and an electron/hole capture time constant ratio between 0.1 and 0.2. This deep-level center is observed in all samples and is attributed to a new type of boron-oxygen complex. Besides this fundamental defect, in some samples an additional shallow-level recombination center at 0.15 eV below Ec or above Ev is found to be activated during light exposure. This second center dominates the light-degraded carrier lifetime only under high-injection conditions and is hence only of minor importance for low-injection operated devices.

Software and electronic developments for TUG - T60 robotic telescope

NASA Astrophysics Data System (ADS)

Parmaksizoglu, M.; Dindar, M.; Kirbiyik, H.; Helhel, S.

2014-12-01

A robotic telescope is a telescope that can make observations without hands-on human control. Its low level behavior is automatic and computer-controlled. Robotic telescopes usually run under the control of a scheduler, which provides high-level control by selecting astronomical targets for observation. TUBITAK National Observatory (TUG) T60 Robotic Telescope is controlled by open source OCAAS software, formally named TALON. This study introduces the improvements on TALON software, new electronic and mechanic designs. The designs and software improvements were implemented in the T60 telescope control software and tested on the real system successfully.

Adherence to HAART therapy measured by electronic monitoring in newly diagnosed HIV patients in Botswana.

PubMed

Vriesendorp, Reinout; Cohen, Adam; Kristanto, Paulus; Vrijens, Bernard; Rakesh, Pande; Anand, Bene; Iwebor, Henry Uchechukwaka; Stiekema, Jacobus

2007-12-01

This pilot study was designed to evaluate the feasibility and benefits of electronic adherence monitoring of antiretroviral medications in HIV patients who recently started Highly Active Anti Retroviral Therapy (HAART) in Francistown, Botswana and to compare this with self-reporting. Dosing histories were compiled electronically using Micro Electro Mechanical Systems (MEMS) monitors to evaluate adherence to prescribed therapies. Thirty patients enrolled in the antiretroviral treatment program were monitored over 6 weeks. These patients were all antiretroviral (ARV) naïve. After each visit (mean three times) to the pharmacy, the data compiled by the monitors were downloaded. Electronic monitoring of adherence was compared to patient self-reports of adherence. The mean individual medication adherence level measured with the electronic device was 85% (range 21-100%). The mean adherence level measured by means of self-reporting was 98% (range 70-100%). Medication prescribed on a once-a-day dose base was associated with a higher adherence level (97.9% for efavirenz) compared with a twice-a-day regimen (88.4% for Lamivudine/Zidovudine). It is feasible to assess treatment adherence of patients living in a low resource setting on HAART by using electronic monitors. Adherence, even in the early stages of treatment, appears to be insufficient in some patients and may be below the level required for continuous inhibition of viral replication. This approach may lead to improved targeting of counselling about their medication intake of such patients in order to prevent occurrence of resistant viral strains due to inadequate inhibition of viral replication. In this pilot study a significant difference between the data recorded through the electronic monitors and those provided by self-reporting was observed.

Large volume serial section tomography by Xe Plasma FIB dual beam microscopy.

PubMed

Burnett, T L; Kelley, R; Winiarski, B; Contreras, L; Daly, M; Gholinia, A; Burke, M G; Withers, P J

2016-02-01

Ga(+) Focused Ion Beam-Scanning Electron Microscopes (FIB-SEM) have revolutionised the level of microstructural information that can be recovered in 3D by block face serial section tomography (SST), as well as enabling the site-specific removal of smaller regions for subsequent transmission electron microscope (TEM) examination. However, Ga(+) FIB material removal rates limit the volumes and depths that can be probed to dimensions in the tens of microns range. Emerging Xe(+) Plasma Focused Ion Beam-Scanning Electron Microscope (PFIB-SEM) systems promise faster removal rates. Here we examine the potential of the method for large volume serial section tomography as applied to bainitic steel and WC-Co hard metals. Our studies demonstrate that with careful control of milling parameters precise automated serial sectioning can be achieved with low levels of milling artefacts at removal rates some 60× faster. Volumes that are hundreds of microns in dimension have been collected using fully automated SST routines in feasible timescales (<24h) showing good grain orientation contrast and capturing microstructural features at the tens of nanometres to the tens of microns scale. Accompanying electron back scattered diffraction (EBSD) maps show high indexing rates suggesting low levels of surface damage. Further, under high current Ga(+) FIB milling WC-Co is prone to amorphisation of WC surface layers and phase transformation of the Co phase, neither of which have been observed at PFIB currents as high as 60nA at 30kV. Xe(+) PFIB dual beam microscopes promise to radically extend our capability for 3D tomography, 3D EDX, 3D EBSD as well as correlative tomography. Copyright © 2015 The Authors. Published by Elsevier B.V. All rights reserved.

Strain effects on the electronic properties in δ-doped oxide superlattices

NASA Astrophysics Data System (ADS)

You, Jeong Ho; Lee, Jun Hee; Okamoto, Satoshi; Cooper, Valentino; Lee, Ho Nyung

2015-03-01

Strain effects on the electronic properties of (LaTiO3)1/(SrTiO3)N superlattices were investigated using density functional theory. Under biaxial in-plane strain within the range of -5% ≤ ɛ// ≤ 5%, the dxy orbital electrons are highly localized at the interfaces whereas the dyz and dxz orbital electrons are more distributed in the SrTiO3 (STO) spacer layers. For STO thickness N ≥ 3 unit cells (u.c.), the dxy orbital electrons form two-dimensional (2D) electron gases (2DEGs). The quantized energy levels of the 2DEG are insensitive to the STO spacer thickness, but are strongly dependent on the applied biaxial in-plane strain. As the in-plane strain changes from compressive to tensile, the quantized energy levels of the dxy orbitals decrease thereby creating more states with 2D character. In contrast to the dxy orbital, the dyz and dxz orbitals always have three-dimensional (3D) transport characteristics and their energy levels increase as the strain changes from compressive to tensile. Since the charge densities in the dxy orbital and the dyz and dxz orbitals respond to biaxial in-plane strain in an opposite way, the transport dimensionality of the majority carriers can be controlled between 2D and 3D by applying biaxial in-plane strain.

Decreased Charge Transport Barrier and Recombination of Organic Solar Cells by Constructing Interfacial Nanojunction with Annealing-Free ZnO and Al Layers.

PubMed

Liu, Chunyu; Zhang, Dezhong; Li, Zhiqi; Zhang, Xinyuan; Guo, Wenbin; Zhang, Liu; Ruan, Shengping; Long, Yongbing

2017-07-05

To overcome drawbacks of the electron transport layer, such as complex surface defects and unmatched energy levels, we successfully employed a smart semiconductor-metal interfacial nanojunciton in organic solar cells by evaporating an ultrathin Al interlayer onto annealing-free ZnO electron transport layer, resulting in a high fill factor of 73.68% and power conversion efficiency of 9.81%. The construction of ZnO-Al nanojunction could effectively fill the surface defects of ZnO and reduce its work function because of the electron transfer from Al to ZnO by Fermi level equilibrium. The filling of surface defects decreased the interfacial carrier recombination in midgap trap states. The reduced surface work function of ZnO-Al remodulated the interfacial characteristics between ZnO and [6,6]-phenyl C71-butyric acid methyl ester (PC 71 BM), decreasing or even eliminating the interfacial barrier against the electron transport, which is beneficial to improve the electron extraction capacity. The filled surface defects and reduced interfacial barrier were realistically observed by photoluminescence measurements of ZnO film and the performance of electron injection devices, respectively. This work provides a simple and effective method to simultaneously solve the problems of surface defects and unmatched energy level for the annealing-free ZnO or other metal oxide semiconductors, paving a way for the future popularization in photovoltaic devices.

Rare earth chalcogenide Ce3Te4 as high efficiency high temperature thermoelectric material

NASA Astrophysics Data System (ADS)

Wang, Xiaochun; Yang, Ronggui; Zhang, Yong; Zhang, Peihong; Xue, Yu

2011-05-01

The electronic band structures of Ce3Te4 have been studied using the first-principles density-functional theory calculations. It is found that the density of states of Ce3Te4 has a very high delta-shaped peak appearing 0.21 eV above the Fermi level, which mainly comes from the f orbital electrons of the rare-earth element Ce. Using the simple theory proposed by Mahan and Sofo, [Proc. Natl. Acad. Sci. U.S.A. 93, 7436 (1996)], we obtain an ideal value of zT=13.5 for Ce3Te4 at T=1200 K, suggesting that the rare-earth chalcogenide Ce3Te4 could be a promising high efficiency high temperature thermoelectric material.

Transport mirages in single-molecule devices

NASA Astrophysics Data System (ADS)

Gaudenzi, R.; Misiorny, M.; Burzurí, E.; Wegewijs, M. R.; van der Zant, H. S. J.

2017-03-01

Molecular systems can exhibit a complex, chemically tailorable inner structure which allows for targeting of specific mechanical, electronic, and optical properties. At the single-molecule level, two major complementary ways to explore these properties are molecular quantum-dot structures and scanning probes. This article outlines comprehensive principles of electron-transport spectroscopy relevant to both these approaches and presents a new, high-resolution experiment on a high-spin single-molecule junction exemplifying these principles. Such spectroscopy plays a key role in further advancing our understanding of molecular and atomic systems, in particular, the relaxation of their spin. In this joint experimental and theoretical analysis, particular focus is put on the crossover between the resonant regime [single-electron tunneling] and the off-resonant regime [inelastic electron (co)tunneling spectroscopy (IETS)]. We show that the interplay of these two processes leads to unexpected mirages of resonances not captured by either of the two pictures alone. Although this turns out to be important in a large fraction of the possible regimes of level positions and bias voltages, it has been given little attention in molecular transport studies. Combined with nonequilibrium IETS—four-electron pump-probe excitations—these mirages provide crucial information on the relaxation of spin excitations. Our encompassing physical picture is supported by a master-equation approach that goes beyond weak coupling. The present work encourages the development of a broader connection between the fields of molecular quantum-dot and scanning probe spectroscopy.

The inter-relationship of ascorbate transport, metabolism and mitochondrial, plastidic respiration.

PubMed

Szarka, András; Bánhegyi, Gábor; Asard, Han

2013-09-20

Ascorbate, this multifaceted small molecular weight carbohydrate derivative, plays important roles in a range of cellular processes in plant cells, from the regulation of cell cycle, through cell expansion and senescence. Beyond these physiological functions, ascorbate has a critical role in responses to abiotic stresses, such as high light, high salinity, or drought. The biosynthesis, recycling, and intracellular transport are important elements of the balancing of ascorbate level to the always-changing conditions and demands. A bidirectional tight relationship was described between ascorbate biosynthesis and the mitochondrial electron transfer chain (mETC), since L-galactono-1,4-lactone dehydrogenase (GLDH), the enzyme catalyzing the ultimate step of ascorbate biosynthesis, uses oxidized cytochrome c as the only electron acceptor and has a role in the assembly of Complex I. A similar bidirectional relationship was revealed between the photosynthetic apparatus and ascorbate biosynthesis since the electron flux through the photosynthetic ETC affects the biosynthesis of ascorbate and the level of ascorbate could affect photosynthesis. The details of this regulatory network of photosynthetic electron transfer, respiratory electron transfer, and ascorbate biosynthesis are still not clear, as are the potential regulatory role and the regulation of intracellular ascorbate transport and fluxes. The elucidation of the role of ascorbate as an important element of the network of photosynthetic, respiratory ETC and tricarboxylic acid cycle will contribute to understanding plant cell responses to different stress conditions.

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Tao; Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016; Xu, Ruimin

2015-06-15

We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr{sub 0.52}Ti{sub 0.48})-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g{sub m}-V{sub g}) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectricmore » constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.« less

Airborne electronics for automated flight systems

NASA Technical Reports Server (NTRS)

Graves, G. B., Jr.

1975-01-01

The increasing importance of airborne electronics for use in automated flight systems is briefly reviewed with attention to both basic aircraft control functions and flight management systems for operational use. The requirements for high levels of systems reliability are recognized. Design techniques are discussed and the areas of control systems, computing and communications are considered in terms of key technical problems and trends for their solution.

A conjugated microporous polymer based visual sensing platform for aminoglycoside antibiotics in water.

PubMed

Bhunia, Subhajit; Dey, Nilanjan; Pradhan, Anirban; Bhattacharya, Santanu

2018-06-20

A donor-acceptor based conjugated microporous polymer, PER@NiP-CMOP-1, has been synthesized which can achieve highly sensitive stereo-specific "Turn ON" biosensing of an aminoglycoside up to the ppb level. The coordination-driven inhibition of photo-induced electron transfer (d-PET) for d-electrons and the rotational freezing are the key factors for the recovery of the emission.

Examinations of electron temperature calculation methods in Thomson scattering diagnostics.

PubMed

Oh, Seungtae; Lee, Jong Ha; Wi, Hanmin

2012-10-01

Electron temperature from Thomson scattering diagnostic is derived through indirect calculation based on theoretical model. χ-square test is commonly used in the calculation, and the reliability of the calculation method highly depends on the noise level of input signals. In the simulations, noise effects of the χ-square test are examined and scale factor test is proposed as an alternative method.

Initial Performance Evaluation of Optical Fibers and Sensors Under High-Energy Electron Beam Irradiation

NASA Astrophysics Data System (ADS)

Palmer, Matthew E.; Slusher, David; Fielder, Robert S.

2006-01-01

In this paper, recent work on the performance of optical fiber, fiber optic sensors, and fiber optic connectors under the influence of a high-energy electron beam is presented. Electron beam irradiation is relevant for the Jupiter Icy Moons Orbiter (JIMO) mission due to the high electron radiation environment surrounding Jupiter. As an initial feasibility test, selected optical fiber components were exposed to dose levels relevant to the Jupiter environment. Three separate fiber types were used: one series consisted of pure silica core fiber, two other series consisted of different levels of Germania-doped fiber. Additionally, a series of fused silica Extrinsic Fabry-Perot Interferometer (EFPI)-based fiber optic sensors and two different types of fiber optic connectors were tested. Two types of fiber coatings were evaluated: acrylate and polyimide. All samples were exposed to three different dose levels: 2 MRad, 20 MRad, and 50 MRad. Optical loss measurements were made on the optical fiber spools as a function of wavelength between 750 and 1750nm at periodic intervals up to 75 hrs after exposure. Attenuation is minimal and wavelength-dependent. Fiber optic sensors were evaluated using a standard EFPI sensor readout and diagnostic system. Optical connectors and optical fiber coatings were visually inspected for degradation. Additionally, tensile testing and minimum bend radius testing was conducted on the fibers. Initial loss measurements indicate a low-level of induced optical attenuation in the fiber which recovers with time. The fiber optic sensors exhibited no observable degradation after exposure. The optical fiber connectors and coatings also showed no observable degradation. In addition to harsh environment survivability, fiber optic sensors offer a number of intrinsic advantages for space nuclear power applications including extremely low mass, immunity to electromagnetic interference, self diagnostics / prognostics, and smart sensor capability. Deploying fiber optic sensors on future space exploration missions would provide a substantial improvement in spacecraft instrumentation.

Plasma devices to guide and collimate a high density of MeV electrons.

PubMed

Kodama, R; Sentoku, Y; Chen, Z L; Kumar, G R; Hatchett, S P; Toyama, Y; Cowan, T E; Freeman, R R; Fuchs, J; Izawa, Y; Key, M H; Kitagawa, Y; Kondo, K; Matsuoka, T; Nakamura, H; Nakatsutsumi, M; Norreys, P A; Norimatsu, T; Snavely, R A; Stephens, R B; Tampo, M; Tanaka, K A; Yabuuchi, T

2004-12-23

The development of ultra-intense lasers has facilitated new studies in laboratory astrophysics and high-density nuclear science, including laser fusion. Such research relies on the efficient generation of enormous numbers of high-energy charged particles. For example, laser-matter interactions at petawatt (10(15) W) power levels can create pulses of MeV electrons with current densities as large as 10(12) A cm(-2). However, the divergence of these particle beams usually reduces the current density to a few times 10(6) A cm(-2) at distances of the order of centimetres from the source. The invention of devices that can direct such intense, pulsed energetic beams will revolutionize their applications. Here we report high-conductivity devices consisting of transient plasmas that increase the energy density of MeV electrons generated in laser-matter interactions by more than one order of magnitude. A plasma fibre created on a hollow-cone target guides and collimates electrons in a manner akin to the control of light by an optical fibre and collimator. Such plasma devices hold promise for applications using high energy-density particles and should trigger growth in charged particle optics.

Observation of the continuous stern-gerlach effect on an electron bound in an atomic Ion

PubMed

Hermanspahn; Haffner; Kluge; Quint; Stahl; Verdu; Werth

2000-01-17

We report on the first observation of the continuous Stern-Gerlach effect on an electron bound in an atomic ion. The measurement was performed on a single hydrogenlike ion ( 12C5+) in a Penning trap. The measured g factor of the bound electron, g = 2.001 042(2), is in excellent agreement with the theoretical value, confirming the relativistic correction at a level of 0.1%. This proves the possibility of g-factor determinations on atomic ions to high precision by using the continuous Stern-Gerlach effect. The result demonstrates the feasibility of conducting experiments on single heavy highly charged ions to test quantum electrodynamics in the strong electric field of the nucleus.

Resonant two-photon ionization and laser induced fluorescence spectroscopy of jet-cooled adenine

NASA Astrophysics Data System (ADS)

Kim, Nam Joon; Jeong, Gawoon; Kim, Yung Sam; Sung, Jiha; Keun Kim, Seong; Park, Young Dong

2000-12-01

Electronic spectra of the jet-cooled DNA base adenine were obtained by the resonant two-photon ionization (R2PI) and the laser induced fluorescence (LIF) techniques. The 0-0 band to the lowest electronically excited state was found to be located at 35 503 cm-1. Well-resolved vibronic structures were observed up to 1100 cm-1 above the 0-0 level, followed by a slow rise of broad structureless absorption. The lowest electronic state was proposed to be of nπ* character, which lies ˜600 cm-1 below the onset of the ππ* state. The broad absorption was attributed to the extensive vibronic mixing between the nπ* state and the high-lying ππ* state.

A high gain free electron laser amplifier design for the Alcator-C tokamak. [FRED

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jong, R.A.

1987-02-01

We describe an improved wiggler tapering algorithm and the resulting wiggler design for a high-gain free electron laser amplifier to be used for plasma heating and current drive experiments in the Alcator-C tokamak. Unlike the original, this new design limits the growth of the shot noise to insignificant levels. The design goal of at least 8 GW of peak power in the TE/sub 01/ mode was achieved with a 3 kA electron beam with energies in the 7 to 9 MeV range and a beam brightness of 10/sup 5/ A/(rad-cm)/sup 2/. The wiggler was 5 m long with a wigglermore » wavelength of 8 cm.« less

Electronic structure basis for the extraordinary magnetoresistance in WTe 2

DOE PAGES

Pletikosić, I.; Ali, Mazhar N.; Fedorov, A. V.; ...

2014-11-19

The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at the Fermi level, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic, quasi one-dimensional Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. As a result, a change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior ofmore » the magnetoresistance in WTe₂ was identified.« less

Tight-binding modeling and low-energy behavior of the semi-Dirac point.

PubMed

Banerjee, S; Singh, R R P; Pardo, V; Pickett, W E

2009-07-03

We develop a tight-binding model description of semi-Dirac electronic spectra, with highly anisotropic dispersion around point Fermi surfaces, recently discovered in electronic structure calculations of VO2-TiO2 nanoheterostructures. We contrast their spectral properties with the well-known Dirac points on the honeycomb lattice relevant to graphene layers and the spectra of bands touching each other in zero-gap semiconductors. We also consider the lowest order dispersion around one of the semi-Dirac points and calculate the resulting electronic energy levels in an external magnetic field. In spite of apparently similar electronic structures, Dirac and semi-Dirac systems support diverse low-energy physics.

Radiation Challenges for Electronics in the Vision for Space Exploration

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.

2006-01-01

The slides present a brief snapshot discussing electronics and exploration-related challenges. Radiation effects have been the prime target, however, electronic parts reliability issues must also be considered. Modern electronics are designed with a 3-5 year lifetime. Upscreening does not improve reliability, merely determines inherent levels. Testing costs are driven by device complexity; they increase tester complexity, beam requirements, and facility choices. Commercial devices may improve performance, but are not cost panaceas. There is need for a more cost-effective access to high energy heavy ion facilities such as NSCL and NSRL. Costs for capable test equipment can run more than $1M for full testing.

a Theoretical Search for AN Electronic Spectrum of the He-BeO Complex

NASA Astrophysics Data System (ADS)

Gardner, Adrian; Heaven, Michael

2014-06-01

The surprisingly high dissociation energy of the He-Be bond in the He-BeO complex was first reported 25 years ago. Following which, a number of theoretical studies have investigated similar closed shell helium containing complexes. However, despite these investigations, a complex containing a strong He-X bond has thus far eluded experimental detection. In this work, potential energy surfaces of electronically excited states of the He-BeO complex have been calculated employing high level CASSCF+MRCI+Q methodologies and utilizing extended basis sets. Several excited states show strong interactions between helium and BeO lying in Franck-Condon accessible windows of electronic transitions arising from the vibrationless electronic ground state. It is hoped that the conclusions of this study will result in the observation an electronic spectrum of this long hypothesized strongly bound complex in the near future. W. Koch, J. R. Collins and G. Frenking, Chem. Phys. Lett. 1986, 132 330-333.

Generation of extremely low frequency chorus in Van Allen radiation belts

NASA Astrophysics Data System (ADS)

Xiao, Fuliang; Liu, Si; Tao, Xin; Su, Zhenpeng; Zhou, Qinghua; Yang, Chang; He, Zhaoguo; He, Yihua; Gao, Zhonglei; Baker, D. N.; Spence, H. E.; Reeves, G. D.; Funsten, H. O.; Blake, J. B.

2017-03-01

Recent studies have shown that chorus can efficiently accelerate the outer radiation belt electrons to relativistic energies. Chorus, previously often observed above 0.1 equatorial electron gyrofrequency fce, was generated by energetic electrons originating from Earth's plasma sheet. Chorus below 0.1 fce has seldom been reported until the recent data from Van Allen Probes, but its origin has not been revealed so far. Because electron resonant energy can approach the relativistic level at extremely low frequency, relativistic effects should be considered in the formula for whistler mode wave growth rate. Here we report high-resolution observations during the 14 October 2014 small storm and firstly demonstrate, using a fully relativistic simulation, that electrons with the high-energy tail population and relativistic pitch angle anisotropy can provide free energy sufficient for generating chorus below 0.1 fce. The simulated wave growth displays a very similar pattern to the observations. The current results can be applied to Jupiter, Saturn, and other magnetized planets.

Treatment of Electronic Energy Level Transition and Ionization Following the Particle-Based Chemistry Model

NASA Technical Reports Server (NTRS)

Liechty, Derek S.; Lewis, Mark

2010-01-01

A new method of treating electronic energy level transitions as well as linking ionization to electronic energy levels is proposed following the particle-based chemistry model of Bird. Although the use of electronic energy levels and ionization reactions in DSMC are not new ideas, the current method of selecting what level to transition to, how to reproduce transition rates, and the linking of the electronic energy levels to ionization are, to the author s knowledge, novel concepts. The resulting equilibrium temperatures are shown to remain constant, and the electronic energy level distributions are shown to reproduce the Boltzmann distribution. The electronic energy level transition rates and ionization rates due to electron impacts are shown to reproduce theoretical and measured rates. The rates due to heavy particle impacts, while not as favorable as the electron impact rates, compare favorably to values from the literature. Thus, these new extensions to the particle-based chemistry model of Bird provide an accurate method for predicting electronic energy level transition and ionization rates in gases.

Surveys of research in the Chemistry Division, Argonne National Laboratory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grazis, B.M.

1992-01-01

Research reports are presented on reactive intermediates in condensed phase (radiation chemistry, photochemistry), electron transfer and energy conversion, photosynthesis and solar energy conversion, metal cluster chemistry, chemical dynamics in gas phase, photoionization-photoelectrons, characterization and reactivity of coal and coal macerals, premium coal sample program, chemical separations, heavy elements coordination chemistry, heavy elements photophysics/photochemistry, f-electron interactions, radiation chemistry of high-level wastes (gas generation in waste tanks), ultrafast molecular electronic devices, and nuclear medicine. Separate abstracts have been prepared. Accelerator activites and computer system/network services are also reported.

Surveys of research in the Chemistry Division, Argonne National Laboratory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grazis, B.M.

1992-11-01

Research reports are presented on reactive intermediates in condensed phase (radiation chemistry, photochemistry), electron transfer and energy conversion, photosynthesis and solar energy conversion, metal cluster chemistry, chemical dynamics in gas phase, photoionization-photoelectrons, characterization and reactivity of coal and coal macerals, premium coal sample program, chemical separations, heavy elements coordination chemistry, heavy elements photophysics/photochemistry, f-electron interactions, radiation chemistry of high-level wastes (gas generation in waste tanks), ultrafast molecular electronic devices, and nuclear medicine. Separate abstracts have been prepared. Accelerator activites and computer system/network services are also reported.

Ionosphere total electron content and its horizontal gradients, measured on the basis of satellite signal recordings at scattered points

DOE Office of Scientific and Technical Information (OSTI.GOV)

Misyura, V.A.; Podnos, V.A.; Kapanin, I.I.

1973-01-01

Translated from Kosm. Issled.; 11: No. 4, 581-585(1973). The integrated electron content of the ionosphere up to the level of the recording satellite, and the horizontal gradients of the integrated electron content (total, latitudinal, and longitudinal components), was obtained at scattered observation points located at medium and high latitudes, on the basis of recordings made of Doppler and Faraday effects on coherent signals from the satellites Explorer-22, Explorer-27, Interkosmos-2, Kosmos321, Kosmos-356, and Kosmos-381. (auth)

Critical thickness for the two-dimensional electron gas in LaTiO3/SrTiO3 superlattices

NASA Astrophysics Data System (ADS)

You, Jeong Ho; Lee, Jun Hee

2013-10-01

Transport dimensionality of Ti d electrons in (LaTiO3)1/(SrTiO3)N superlattices has been investigated using density functional theory with local spin-density approximation + U method. Different spatial distribution patterns have been found between Ti t2g orbital electrons. The dxy orbital electrons are highly localized near interfaces due to the potentials by positively charged LaO layers, while the degenerate dyz and dxz orbital electrons are more distributed inside SrTiO3 insulators. For N ≥ 3 unit cells (u.c.), the Ti dxy densities of state exhibit the staircaselike increments, which appear at the same energy levels as the dxy flat bands along the Γ-Z direction in band structures. The kz-independent discrete energy levels indicate that the electrons in dxy flat bands are two-dimensional electron gases (2DEGs) which can transport along interfaces, but they cannot transport perpendicularly to interfaces due to the confinements in the potential wells by LaO layers. Unlike the dxy orbital electrons, the dyz and dxz orbital electrons have three-dimensional (3D) transport characteristics, regardless of SrTiO3 thicknesses. The 2DEG formation by dxy orbital electrons, when N ≥ 3 u.c., indicates the existence of critical SrTiO3 thickness where the electron transport dimensionality starts to change from 3D to 2D in (LaTiO3)1/(SrTiO3)N superlattices.

Carbon nanotube chemistry and assembly for electronic devices

NASA Astrophysics Data System (ADS)

Derycke, Vincent; Auvray, Stéphane; Borghetti, Julien; Chung, Chia-Ling; Lefèvre, Roland; Lopez-Bezanilla, Alejandro; Nguyen, Khoa; Robert, Gaël; Schmidt, Gregory; Anghel, Costin; Chimot, Nicolas; Lyonnais, Sébastien; Streiff, Stéphane; Campidelli, Stéphane; Chenevier, Pascale; Filoramo, Arianna; Goffman, Marcelo F.; Goux-Capes, Laurence; Latil, Sylvain; Blase, Xavier; Triozon, François; Roche, Stephan; Bourgoin, Jean-Philippe

2009-05-01

Carbon nanotubes (CNTs) have exceptional physical properties that make them one of the most promising building blocks for future nanotechnologies. They may in particular play an important role in the development of innovative electronic devices in the fields of flexible electronics, ultra-high sensitivity sensors, high frequency electronics, opto-electronics, energy sources and nano-electromechanical systems (NEMS). Proofs of concept of several high performance devices already exist, usually at the single device level, but there remain many serious scientific issues to be solved before the viability of such routes can be evaluated. In particular, the main concern regards the controlled synthesis and positioning of nanotubes. In our opinion, truly innovative use of these nano-objects will come from: (i) the combination of some of their complementary physical properties, such as combining their electrical and mechanical properties; (ii) the combination of their properties with additional benefits coming from other molecules grafted on the nanotubes (this route being particularly relevant for gas- and bio-sensors, opto-electronic devices and energy sources); and (iii) the use of chemically- or bio-directed self-assembly processes to allow the efficient combination of several devices into functional arrays or circuits. In this article, we review our recent results concerning nanotube chemistry and assembly and their use to develop electronic devices. In particular, we present carbon nanotube field effect transistors and their chemical optimization, high frequency nanotube transistors, nanotube-based opto-electronic devices with memory capabilities and nanotube-based nano-electromechanical systems (NEMS). The impact of chemical functionalization on the electronic properties of CNTs is analyzed on the basis of theoretical calculations. To cite this article: V. Derycke et al., C. R. Physique 10 (2009).

Surface State Density Determines the Energy Level Alignment at Hybrid Perovskite/Electron Acceptors Interfaces.

PubMed

Zu, Fengshuo; Amsalem, Patrick; Ralaiarisoa, Maryline; Schultz, Thorsten; Schlesinger, Raphael; Koch, Norbert

2017-11-29

Substantial variations in the electronic structure and thus possibly conflicting energetics at interfaces between hybrid perovskites and charge transport layers in solar cells have been reported by the research community. In an attempt to unravel the origin of these variations and enable reliable device design, we demonstrate that donor-like surface states stemming from reduced lead (Pb 0 ) directly impact the energy level alignment at perovskite (CH 3 NH 3 PbI 3-x Cl x ) and molecular electron acceptor layer interfaces using photoelectron spectroscopy. When forming the interfaces, it is found that electron transfer from surface states to acceptor molecules occurs, leading to a strong decrease in the density of ionized surface states. As a consequence, for perovskite samples with low surface state density, the initial band bending at the pristine perovskite surface can be flattened upon interface formation. In contrast, for perovskites with a high surface state density, the Fermi level is strongly pinned at the conduction band edge, and only minor changes in surface band bending are observed upon acceptor deposition. Consequently, depending on the initial perovskite surface state density, very different interface energy level alignment situations (variations over 0.5 eV) are demonstrated and rationalized. Our findings help explain the rather dissimilar reported energy levels at interfaces with perovskites, refining our understanding of the operating principles in devices comprising this material.

Investigation of solar cells fabricated on low-cost silicon sheet materials using 1 MeV electron irradiation

NASA Technical Reports Server (NTRS)

Kachare, A. H.; Hyland, S. L.; Garlick, G. F. J.

1981-01-01

The use of high energy electron irradiation is investigated as a controlled means to study in more detail the junction depletion layer processes of solar cells made on various low-cost silicon sheet materials. Results show that solar cells made on Czochralski grown silicon exhibit enhancement of spectral response in the shorter wavelength region when irradiated with high energy electrons. The base region damage can be reduced by subsequent annealing at 450 C which restores the degraded longer wavelength response, although the shorter wavelength enhancement persists. The second diode component of the cell dark forward bias current is also reduced by electron irradiation, while thermal annealing at 450 C without electron irradiation can also produce these same effects. Electron irradiation produces small changes in the shorter wavelength spectral responses and junction improvements in solar cells made on WEB, EFG, and HEM silicon. It is concluded that these beneficial effects on cell characteristics are due to the reduction of oxygen associated deep level recombination centers in the N(+) diffused layer and in the junction.

New analytical model for the ozone electronic ground state potential surface and accurate ab initio vibrational predictions at high energy range.

PubMed

Tyuterev, Vladimir G; Kochanov, Roman V; Tashkun, Sergey A; Holka, Filip; Szalay, Péter G

2013-10-07

An accurate description of the complicated shape of the potential energy surface (PES) and that of the highly excited vibration states is of crucial importance for various unsolved issues in the spectroscopy and dynamics of ozone and remains a challenge for the theory. In this work a new analytical representation is proposed for the PES of the ground electronic state of the ozone molecule in the range covering the main potential well and the transition state towards the dissociation. This model accounts for particular features specific to the ozone PES for large variations of nuclear displacements along the minimum energy path. The impact of the shape of the PES near the transition state (existence of the "reef structure") on vibration energy levels was studied for the first time. The major purpose of this work was to provide accurate theoretical predictions for ozone vibrational band centres at the energy range near the dissociation threshold, which would be helpful for understanding the very complicated high-resolution spectra and its analyses currently in progress. Extended ab initio electronic structure calculations were carried out enabling the determination of the parameters of a minimum energy path PES model resulting in a new set of theoretical vibrational levels of ozone. A comparison with recent high-resolution spectroscopic data on the vibrational levels gives the root-mean-square deviations below 1 cm(-1) for ozone band centres up to 90% of the dissociation energy. New ab initio vibrational predictions represent a significant improvement with respect to all previously available calculations.

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency.

PubMed

Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

2018-04-24

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

GigaGauss solenoidal magnetic field inside bubbles excited in under-dense plasma

PubMed Central

Lécz, Zs.; Konoplev, I. V.; Seryi, A.; Andreev, A.

2016-01-01

This paper proposes a novel and effective method for generating GigaGauss level, solenoidal quasi-static magnetic fields in under-dense plasma using screw-shaped high intensity laser pulses. This method produces large solenoidal fields that move with the driving laser pulse and are collinear with the accelerated electrons. This is in contrast with already known techniques which rely on interactions with over-dense or solid targets and generates radial or toroidal magnetic field localized at the stationary target. The solenoidal field is quasi-stationary in the reference frame of the laser pulse and can be used for guiding electron beams. It can also provide synchrotron radiation beam emittance cooling for laser-plasma accelerated electron and positron beams, opening up novel opportunities for designs of the light sources, free electron lasers, and high energy colliders based on laser plasma acceleration. PMID:27796327

GigaGauss solenoidal magnetic field inside bubbles excited in under-dense plasma

NASA Astrophysics Data System (ADS)

Lécz, Zs.; Konoplev, I. V.; Seryi, A.; Andreev, A.

2016-10-01

This paper proposes a novel and effective method for generating GigaGauss level, solenoidal quasi-static magnetic fields in under-dense plasma using screw-shaped high intensity laser pulses. This method produces large solenoidal fields that move with the driving laser pulse and are collinear with the accelerated electrons. This is in contrast with already known techniques which rely on interactions with over-dense or solid targets and generates radial or toroidal magnetic field localized at the stationary target. The solenoidal field is quasi-stationary in the reference frame of the laser pulse and can be used for guiding electron beams. It can also provide synchrotron radiation beam emittance cooling for laser-plasma accelerated electron and positron beams, opening up novel opportunities for designs of the light sources, free electron lasers, and high energy colliders based on laser plasma acceleration.

Noise propagation effects in power supply distribution systems for high-energy physics experiments

NASA Astrophysics Data System (ADS)

Arteche, F.; Rivetta, C.; Iglesias, M.; Echeverria, I.; Pradas, A.; Arcega, F. J.

2017-12-01

High-energy physics experiments are supplied by thousands of power supply units placed in distant areas from the front-end electronics. The power supply units and the front-end electronics are connected through long power cables that propagate the output noise from the power supplies to the detector. This paper addresses the effect of long cables on the noise propagation and the impact that those cables have on the conducted emission levels required for the power supplies and the selection of EMI filters for the front-end electronic low-voltage input. This analysis is part of the electromagnetic compatibility based design focused on functional safety to define the type of cable, shield connections, EMI filters and power supply specifications required to ensure the successful integration of the detector and, specifically, to achieve the designed performance of the front-end electronics.

Noise propagation effects in power supply distribution systems for high-energy physics experiments

DOE PAGES

Arteche, F.; Rivetta, C.; Iglesias, M.; ...

2017-12-05

High-energy physics experiments are supplied by thousands of power supply units placed in distant areas from the front-end electronics. The power supply units and the front-end electronics are connected through long power cables that propagate the output noise from the power supplies to the detector. Here, this paper addresses the effect of long cables on the noise propagation and the impact that those cables have on the conducted emission levels required for the power supplies and the selection of EMI filters for the front-end electronic low-voltage input. Lastly, this analysis is part of the electromagnetic compatibility based design focused onmore » functional safety to define the type of cable, shield connections, EMI filters and power supply specifications required to ensure the successful integration of the detector and, specifically, to achieve the designed performance of the front-end electronics.« less

Noise propagation effects in power supply distribution systems for high-energy physics experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arteche, F.; Rivetta, C.; Iglesias, M.

High-energy physics experiments are supplied by thousands of power supply units placed in distant areas from the front-end electronics. The power supply units and the front-end electronics are connected through long power cables that propagate the output noise from the power supplies to the detector. Here, this paper addresses the effect of long cables on the noise propagation and the impact that those cables have on the conducted emission levels required for the power supplies and the selection of EMI filters for the front-end electronic low-voltage input. Lastly, this analysis is part of the electromagnetic compatibility based design focused onmore » functional safety to define the type of cable, shield connections, EMI filters and power supply specifications required to ensure the successful integration of the detector and, specifically, to achieve the designed performance of the front-end electronics.« less

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

NASA Astrophysics Data System (ADS)

Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

2018-04-01

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

Band-like transport in highly crystalline graphene films from defective graphene oxides.

PubMed

Negishi, R; Akabori, M; Ito, T; Watanabe, Y; Kobayashi, Y

2016-07-01

The electrical transport property of the reduced graphene oxide (rGO) thin-films synthesized from defective GO through thermal treatment in a reactive ethanol environment at high temperature above 1000 °C shows a band-like transport with small thermal activation energy (Ea~10 meV) that occurs during high carrier mobility (~210 cm(2)/Vs). Electrical and structural analysis using X-ray absorption fine structure, the valence band photo-electron, Raman spectra and transmission electron microscopy indicate that a high temperature process above 1000 °C in the ethanol environment leads to an extraordinary expansion of the conjugated π-electron system in rGO due to the efficient restoration of the graphitic structure. We reveal that Ea decreases with the increasing density of states near the Fermi level due to the expansion of the conjugated π-electron system in the rGO. This means that Ea corresponds to the energy gap between the top of the valence band and the bottom of the conduction band. The origin of the band-like transport can be explained by the carriers, which are more easily excited into the conduction band due to the decreasing energy gap with the expansion of the conjugated π-electron system in the rGO.

Band-like transport in highly crystalline graphene films from defective graphene oxides

NASA Astrophysics Data System (ADS)

Negishi, R.; Akabori, M.; Ito, T.; Watanabe, Y.; Kobayashi, Y.

2016-07-01

The electrical transport property of the reduced graphene oxide (rGO) thin-films synthesized from defective GO through thermal treatment in a reactive ethanol environment at high temperature above 1000 °C shows a band-like transport with small thermal activation energy (Ea~10 meV) that occurs during high carrier mobility (~210 cm2/Vs). Electrical and structural analysis using X-ray absorption fine structure, the valence band photo-electron, Raman spectra and transmission electron microscopy indicate that a high temperature process above 1000 °C in the ethanol environment leads to an extraordinary expansion of the conjugated π-electron system in rGO due to the efficient restoration of the graphitic structure. We reveal that Ea decreases with the increasing density of states near the Fermi level due to the expansion of the conjugated π-electron system in the rGO. This means that Ea corresponds to the energy gap between the top of the valence band and the bottom of the conduction band. The origin of the band-like transport can be explained by the carriers, which are more easily excited into the conduction band due to the decreasing energy gap with the expansion of the conjugated π-electron system in the rGO.

Computer-Mediated Communication as Experienced by Korean Women Students in US Higher Education

ERIC Educational Resources Information Center

Baek, Mikyung; Damarin, Suzanne K.

2008-01-01

Having grown up in an age of rapidly developing electronic communication technology, today's students come to higher education with high levels of comfort and familiarity with computer-mediated communication (CMC, hereafter). The students' level of comfort with CMC, coupled with CMC's promises of enabling supplemental class discussion as well as…

Material Processing Opportunites Utilizing a Free Electron Laser

NASA Astrophysics Data System (ADS)

Todd, Alan

1996-11-01

Many properties of photocathode-driven Free Electron Lasers (FEL) are extremely attractive for material processing applications. These include: 1) broad-band tunability across the IR and UV spectra which permits wavelength optimization, depth deposition control and utilization of resonance phenomena; 2) picosecond pulse structure with continuous nanosecond spacing for optimum deposition efficiency and minimal collateral damage; 3) high peak and average radiated power for economic processing in quantity; and 4) high brightness for spatially defined energy deposition and intense energy density in small spots. We discuss five areas: polymer, metal and electronic material processing, micromachining and defense applications; where IR or UV material processing will find application if the economics is favorable. Specific examples in the IR and UV, such as surface texturing of polymers for improved look and feel, and anti-microbial food packaging films, which have been demonstrated using UV excimer lamps and lasers, will be given. Unfortunately, although the process utility is readily proven, the power levels and costs of lamps and lasers do not scale to production margins. However, from these examples, application specific cost targets ranging from 0.1=A2/kJ to 10=A2/kJ of delivered radiation at power levels from 10 kW to 500 kW, have been developed and are used to define strawman FEL processing systems. Since =46EL radiation energy extraction from the generating electron beam is typically a few percent, at these high average power levels, economic considerations dictate the use of a superconducting RF accelerator with energy recovery to minimize cavity and beam dump power loss. Such a 1 kW IR FEL, funded by the US Navy, is presently under construction at the Thomas Jefferson National Accelerator Facility. This dual-use device, scheduled to generate first light in late 1997, will test both the viability of high-power FELs for shipboard self-defense against cruise missiles, and for the first time, provide an industrial testbed capable of processing various materials in market evaluation quantities.

Theoretical research program to study transition metal trimers and embedded clusters

NASA Technical Reports Server (NTRS)

Walch, S. P.

1984-01-01

Small transition metal clusters were studied at a high level of approximation, including all the valence electrons in the calculation and extensive electron correlation, in order to understand the electronic structure of these small metal clusters. By comparison of dimers, trimers, and possibly higher clusters, the information obtained was used to provide insights into the electronic structure of bulk transition metals. Small metal clusters are currently of considerable experimental interest and some information is becomming available both from matrix electron spin resonance studies and from gas phase spectroscopy. Collaboration between theorists and experimentalists is thus expected to be especially profitable at this time since there is some experimental information which can serve to guide the theoretical work.

HIGH BREAST MILK LEVELS OF POLYCHLORINATEDE BIPHENYLS (PCBS) AMONG FOUR WOMEN LIVING ADJACENT TO A PCB-CONTAMINATED WASTE SITE

EPA Science Inventory

As a consequence of contamination by effluents from local electronics manufacturing facilities, the New Bedford Harbor and estuary in southeastern Massachusetts is among the sites in the United States that are considered the most highly contaminated by polychlorinated biphenyls (...

Hydrogen rotation-vibration oscillator

DOEpatents

Rhodes, C.K.

1974-01-29

A laser system is described wherein molecular species of hydrogen and hydrogen isotopes are induced to oscillate on rotational-vibrational levels by subjecting the hydrogen to a transverse beam of electrons of a narrowly defined energy between about 1 and 5 eV, thereby producing high intensity and high energy output. (Official Gazette)

Modern Material Analysis Instruments Add a New Dimension to Materials Characterization and Failure Analysis

NASA Technical Reports Server (NTRS)

Panda, Binayak

2009-01-01

Modern analytical tools can yield invaluable results during materials characterization and failure analysis. Scanning electron microscopes (SEMs) provide significant analytical capabilities, including angstrom-level resolution. These systems can be equipped with a silicon drift detector (SDD) for very fast yet precise analytical mapping of phases, as well as electron back-scattered diffraction (EBSD) units to map grain orientations, chambers that admit large samples, variable pressure for wet samples, and quantitative analysis software to examine phases. Advanced solid-state electronics have also improved surface and bulk analysis instruments: Secondary ion mass spectroscopy (SIMS) can quantitatively determine and map light elements such as hydrogen, lithium, and boron - with their isotopes. Its high sensitivity detects impurities at parts per billion (ppb) levels. X-ray photo-electron spectroscopy (XPS) can determine oxidation states of elements, as well as identifying polymers and measuring film thicknesses on coated composites. This technique is also known as electron spectroscopy for chemical analysis (ESCA). Scanning Auger electron spectroscopy (SAM) combines surface sensitivity, spatial lateral resolution (10 nm), and depth profiling capabilities to describe elemental compositions of near and below surface regions down to the chemical state of an atom.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoshimoto, Shinya, E-mail: yosshi@issp.u-tokyo.ac.jp; Shiozawa, Yuichiro; Koitaya, Takanori

Electronic states and electrical conductivity of the native oxide Si(111) surface adsorbed with an electron donor tetrakis(dimethylamino)ethylene (TDAE) were investigated using ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy (XPS), and independently driven four-probe conductivity measurements. The formation of positively charged TDAE species is confirmed by the downward shift of the vacuum level by 1.45 eV, the absence of HOMO level in the valence band, and observation of the positively charged state in the N 1s XPS spectra. Si 2p XPS spectra and four-probe conductivity measurements revealed that TDAE adsorption induces an increase in downward band bending and a reduction in electrical resistancemore » of the surface, respectively. The sheet conductivity and the electron density of the surface are 1.1 μS/◻ and 4.6 × 10{sup 9} cm{sup −2}, respectively, after TDAE adsorption, and they are as high as 350% of the original surface. These results demonstrate that the electron density of the semiconductor surface is successfully controlled by the electron donor molecule TDAE.« less

Evidence of Electron-Hole Imbalance in WTe2 from High-Resolution Angle-Resolved Photoemission Spectroscopy

NASA Astrophysics Data System (ADS)

Wang, Chen-Lu; Zhang, Yan; Huang, Jian-Wei; Liu, Guo-Dong; Liang, Ai-Ji; Zhang, Yu-Xiao; Shen, Bing; Liu, Jing; Hu, Cheng; Ding, Ying; Liu, De-Fa; Hu, Yong; He, Shao-Long; Zhao, Lin; Yu, Li; Hu, Jin; Wei, Jiang; Mao, Zhi-Qiang; Shi, You-Guo; Jia, Xiao-Wen; Zhang, Feng-Feng; Zhang, Shen-Jin; Yang, Feng; Wang, Zhi-Min; Peng, Qin-Jun; Xu, Zu-Yan; Chen, Chuang-Tian; Zhou, Xing-Jiang

2017-08-01

WTe2 has attracted a great deal of attention because it exhibits extremely large and nonsaturating magnetoresistance. The underlying origin of such a giant magnetoresistance is still under debate. Utilizing laser-based angle-resolved photoemission spectroscopy with high energy and momentum resolutions, we reveal the complete electronic structure of WTe2. This makes it possible to determine accurately the electron and hole concentrations and their temperature dependence. We find that, with increasing the temperature, the overall electron concentration increases while the total hole concentration decreases. It indicates that the electron-hole compensation, if it exists, can only occur in a narrow temperature range, and in most of the temperature range there is an electron-hole imbalance. Our results are not consistent with the perfect electron-hole compensation picture that is commonly considered to be the cause of the unusual magnetoresistance in WTe2. We identified a flat band near the Brillouin zone center that is close to the Fermi level and exhibits a pronounced temperature dependence. Such a flat band can play an important role in dictating the transport properties of WTe2. Our results provide new insight on understanding the origin of the unusual magnetoresistance in WTe2.

M-shell resolved high-resolution X-ray spectroscopic study of transient matter evolution driven by hot electrons in kJ-laser produced plasmas

NASA Astrophysics Data System (ADS)

Condamine, F. P.; Šmíd, M.; Renner, O.; Dozières, M.; Thais, F.; Angelo, P.; Rosmej, F. B.

2017-03-01

Hot electrons represent a key subject for high intensity laser produced plasmas and atomic physics. Simulations of the radiative properties indicate a high sensitivity to hot electrons, that in turn provides the possibility for their detailed characterization by high-resolution spectroscopic methods. Of particular interest is X-ray spectroscopy due to reduced photo-absorption in dense matter and their efficient generation by hot electrons (inner-shell ionization/excitation). Here, we report on an experimental campaign conducted at the ns, kJ laser facility PALS at Prague in Czech Republic. Thin copper foils have been irradiated with 1ω pulses. Two spherically bent quartz Bragg crystal spectrometers with high spectral (λ/Δλ > 5000) and spatial resolutions (Δx = 30µm) have been set up simultaneously to achieve a high level of confidence for the complex Kα emission group. In particular, this group, which shows a strong overlap between lines, can be resolved in several substructures. Furthermore, an emission on the red wing of the Kα2 transition (λ = 1.5444A) could be identified with Hartree-Fock atomic structure calculations. We discuss possible implications for the analysis of non-equilibrium phenomena and present first simulations.

Study of sulfur bonding on gallium arsenide (100) surfaces using supercritical fluid extraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cabauy, P.; Darici, Y.; Furton, K.G.

1995-12-01

In the last decades Gallium Arsenide (GaAs) has been considered the semiconductor that will replace silicon because of its direct band gap and high electron mobility. Problems with GaAs Fermi level pinning has halted its widespread use in the electronics industry. The formation of oxides on GaAs results in a high density of surface states that effectively pin the surface Fermi level at the midgap. Studies on sulfur passivation have eliminated oxidation and virtually unpinned the Fermi level on the GaAs surface. This has given rise to interest in sulfur-GaAs bonds. In this presentation, we will discuss the types ofmore » sulfur bonds extracted from a sulfur passivated GaAs (100) using Supercritical Fluid (CO2) Extraction (SFE). SFE can be a valuable tool in the study of chemical speciations on semiconductor surfaces. The variables evaluated to effectively study the sulfur species from the GaAs surface include passivation techniques, supercritical fluid temperatures, densities, and extraction times.« less

Spin quenching assisted by a strongly anisotropic compression behavior in MnP

NASA Astrophysics Data System (ADS)

Han, Fei; Wang, Di; Wang, Yonggang; Li, Nana; Bao, Jin-Ke; Li, Bing; Botana, Antia S.; Xiao, Yuming; Chow, Paul; Chung, Duck Young; Chen, Jiuhua; Wan, Xiangang; Kanatzidis, Mercouri G.; Yang, Wenge; Mao, Ho-Kwang

2018-02-01

We studied the crystal structure and spin state of MnP under high pressure with synchrotron x-ray diffraction and x-ray emission spectroscopy (XES). MnP has an exceedingly strong anisotropy in compressibility, with the primary compressible direction along the b axis of the Pnma structure. XES reveals a pressure-driven quenching of the spin state in MnP. First-principles calculations suggest that the strongly anisotropic compression behavior significantly enhances the dispersion of the Mn d-orbitals and the splitting of the d-orbital levels compared to the hypothetical isotropic compression behavior. Thus, we propose spin quenching results mainly from the significant enhancement of the itinerancy of d electrons and partly from spin rearrangement occurring in the split d-orbital levels near the Fermi level. This explains the fast suppression of magnetic ordering in MnP under high pressure. The spin quenching lags behind the occurrence of superconductivity at ˜8 GPa implying that spin fluctuations govern the electron pairing for superconductivity.

Spin quenching assisted by a strongly anisotropic compression behavior in MnP

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Fei; Wang, Di; Wang, Yonggang

We studied the crystal structure and spin state of MnP under high pressure with synchrotron X-ray diffraction and X-ray emission spectroscopy. MnP has an exceedingly strong anisotropy in compressibility, with the primary compressible direction along the b axis of the Pnma structure. X-ray emission spectroscopy reveals a pressure-driven quenching of the spin state in MnP. First-principles calculations suggest that the strongly anisotropic compression behavior significantly enhances the dispersion of the Mn d-orbitals and the splitting of the d-orbital levels compared to the hypothetical isotropic compression behavior. Thus, we propose spin quenching results mainly from the significant enhancement of the itinerancymore » of d electrons and partly from spin rearrangement occurring in the split d-orbital levels near the Fermi level. This explains the fast suppression of magnetic ordering in MnP under high pressure. The spin quenching lags behind the occurrence of superconductivity at ~8 GPa implying that spin fluctuations govern the electron pairing for superconductivity.« less

Nicotine absorption from electronic cigarette use: comparison between first and new-generation devices.

PubMed

Farsalinos, Konstantinos E; Spyrou, Alketa; Tsimopoulou, Kalliroi; Stefopoulos, Christos; Romagna, Giorgio; Voudris, Vassilis

2014-02-26

A wide range of electronic cigarette (EC) devices, from small cigarette-like (first-generation) to new-generation high-capacity batteries with electronic circuits that provide high energy to a refillable atomizer, are available for smokers to substitute smoking. Nicotine delivery to the bloodstream is important in determining the addictiveness of ECs, but also their efficacy as smoking substitutes. In this study, plasma nicotine levels were measured in experienced users using a first- vs. new-generation EC device for 1 hour with an 18 mg/ml nicotine-containing liquid. Plasma nicotine levels were higher by 35-72% when using the new- compared to the first-generation device. Compared to smoking one tobacco cigarette, the EC devices and liquid used in this study delivered one-third to one-fourth the amount of nicotine after 5 minutes of use. New-generation EC devices were more efficient in nicotine delivery, but still delivered nicotine much slower compared to tobacco cigarettes. The use of 18 mg/ml nicotine-concentration liquid probably compromises ECs' effectiveness as smoking substitutes; this study supports the need for higher levels of nicotine-containing liquids (approximately 50 mg/ml) in order to deliver nicotine more effectively and approach the nicotine-delivery profile of tobacco cigarettes.

Time-dependent multi-dimensional simulation studies of the electron output scheme for high power FELs

NASA Astrophysics Data System (ADS)

Hahn, S. J.; Fawley, W. M.; Kim, K.-J.; Edighoffer, J. A.

1995-04-01

We examine the performance of the so-called electron output scheme recently proposed by the Novosibirsk group [G.I. Erg et al., 15th Int. Free Electron Laser Conf., The Hague, The Netherlands, 1993, Book of Abstracts p. 50; Preprint Budker INP 93-75]. In this scheme, the key role of the FEL oscillator is to induce bunching, while an external undulator, called the radiator, then outcouples the bunched electron beam to optical energy via coherent emission. The level of the intracavity power in the oscillator is kept low by employing a transverse optical klystron (TOK) configuration, thus avoiding excessive thermal loading on the cavity mirrors. Time-dependent effects are important in the operation of the electron output scheme because high gain in the TOK oscillator leads to sideband instabilities and chaotic behavior. We have carried out an extensive simulation study by using 1D and 2D time-dependent codes and find that proper control of the oscillator cavity detuning and cavity loss results in high output bunching with a narrow spectral bandwidth. Large cavity detuning in the oscillator and tapering of the radiator undulator is necessary for the optimum output power.

Performance of low-voltage STEM/TEM with delta corrector and cold field emission gun.

PubMed

Sasaki, Takeo; Sawada, Hidetaka; Hosokawa, Fumio; Kohno, Yuji; Tomita, Takeshi; Kaneyama, Toshikatsu; Kondo, Yukihito; Kimoto, Koji; Sato, Yuta; Suenaga, Kazu

2010-08-01

To reduce radiation damage caused by the electron beam and to obtain high-contrast images of specimens, we have developed a highly stabilized transmission electron microscope equipped with a cold field emission gun and spherical aberration correctors for image- and probe-forming systems, which operates at lower acceleration voltages than conventional transmission electron microscopes. A delta-type aberration corrector is designed to simultaneously compensate for third-order spherical aberration and fifth-order 6-fold astigmatism. Both were successfully compensated in both scanning transmission electron microscopy (STEM) and transmission electron microscopy (TEM) modes in the range 30-60 kV. The Fourier transforms of raw high-angle annular dark field (HAADF) images of a Si[110] sample revealed spots corresponding to lattice spacings of 111 and 96 pm at 30 and 60 kV, respectively, and those of raw TEM images of an amorphous Ge film with gold particles showed spots corresponding to spacings of 91 and 79 pm at 30 and 60 kV, respectively. Er@C(82)-doped single-walled carbon nanotubes, which are carbon-based samples, were successfully observed by HAADF-STEM imaging with an atomic-level resolution.

Enhanced electron mobility at the two-dimensional metallic surface of BaSnO3 electric-double-layer transistor at low temperatures

NASA Astrophysics Data System (ADS)

Fujiwara, Kohei; Nishihara, Kazuki; Shiogai, Junichi; Tsukazaki, Atsushi

2017-05-01

Wide-bandgap oxides exhibiting high electron mobility hold promise for the development of useful electronic and optoelectronic devices as well as for basic research on two-dimensional electron transport phenomena. A perovskite-type tin oxide, BaSnO3, is currently one of such targets owing to distinctly high mobility at room temperature. The challenge to overcome towards the use of BaSnO3 thin films in applications is suppression of dislocation scattering, which is one of the dominant scattering origins for electron transport. Here, we show that the mobility of the BaSnO3 electric-double-layer transistor reaches 300 cm2 V-1 s-1 at 50 K. The improved mobility indicates that charged dislocation scattering is effectively screened by electrostatically doped high-density charge carriers. We also observed metallic conduction persisting down to 2 K, which is attributed to the transition to the degenerate semiconductor. The experimental verification of bulk-level mobility at the densely accumulated surface sheds more light on the importance of suppression of dislocation scattering by interface engineering in doped BaSnO3 thin films for transparent electrode applications.

Energy level alignment at molecule-metal interfaces from an optimally tuned range-separated hybrid functional

DOE PAGES

Liu, Zhen-Fei; Egger, David A.; Refaely-Abramson, Sivan; ...

2017-02-21

The alignment of the frontier orbital energies of an adsorbed molecule with the substrate Fermi level at metal-organic interfaces is a fundamental observable of significant practical importance in nanoscience and beyond. Typical density functional theory calculations, especially those using local and semi-local functionals, often underestimate level alignment leading to inaccurate electronic structure and charge transport properties. Here, we develop a new fully self-consistent predictive scheme to accurately compute level alignment at certain classes of complex heterogeneous molecule-metal interfaces based on optimally tuned range-separated hybrid functionals. Starting from a highly accurate description of the gas-phase electronic structure, our method by constructionmore » captures important nonlocal surface polarization effects via tuning of the long-range screened exchange in a range-separated hybrid in a non-empirical and system-specific manner. We implement this functional in a plane-wave code and apply it to several physisorbed and chemisorbed molecule-metal interface systems. Our results are in quantitative agreement with experiments, the both the level alignment and work function changes. This approach constitutes a new practical scheme for accurate and efficient calculations of the electronic structure of molecule-metal interfaces.« less

Energy level alignment at molecule-metal interfaces from an optimally tuned range-separated hybrid functional

NASA Astrophysics Data System (ADS)

Liu, Zhen-Fei; Egger, David A.; Refaely-Abramson, Sivan; Kronik, Leeor; Neaton, Jeffrey B.

2017-03-01

The alignment of the frontier orbital energies of an adsorbed molecule with the substrate Fermi level at metal-organic interfaces is a fundamental observable of significant practical importance in nanoscience and beyond. Typical density functional theory calculations, especially those using local and semi-local functionals, often underestimate level alignment leading to inaccurate electronic structure and charge transport properties. In this work, we develop a new fully self-consistent predictive scheme to accurately compute level alignment at certain classes of complex heterogeneous molecule-metal interfaces based on optimally tuned range-separated hybrid functionals. Starting from a highly accurate description of the gas-phase electronic structure, our method by construction captures important nonlocal surface polarization effects via tuning of the long-range screened exchange in a range-separated hybrid in a non-empirical and system-specific manner. We implement this functional in a plane-wave code and apply it to several physisorbed and chemisorbed molecule-metal interface systems. Our results are in quantitative agreement with experiments, the both the level alignment and work function changes. Our approach constitutes a new practical scheme for accurate and efficient calculations of the electronic structure of molecule-metal interfaces.

Peculiar bonding associated with atomic doping and hidden honeycombs in borophene

NASA Astrophysics Data System (ADS)

Lee, Chi-Cheng; Feng, Baojie; D'angelo, Marie; Yukawa, Ryu; Liu, Ro-Ya; Kondo, Takahiro; Kumigashira, Hiroshi; Matsuda, Iwao; Ozaki, Taisuke

2018-02-01

Engineering atomic-scale structures allows great manipulation of physical properties and chemical processes for advanced technology. We show that the B atoms deployed at the centers of honeycombs in boron sheets, borophene, behave as nearly perfect electron donors for filling the graphitic σ bonding states without forming additional in-plane bonds by first-principles calculations. The dilute electron density distribution owing to the weak bonding surrounding the center atoms provides easier atomic-scale engineering and is highly tunable via in-plane strain, promising for practical applications, such as modulating the extraordinarily high thermal conductance that exceeds the reported value in graphene. The hidden honeycomb bonding structure suggests an unusual energy sequence of core electrons that has been verified by our high-resolution core-level photoelectron spectroscopy measurements. With the experimental and theoretical evidence, we demonstrate that borophene exhibits a peculiar bonding structure and is distinctive among two-dimensional materials.

Origin of background electron concentration in In xGa 1-xN alloys

DOE PAGES

Pantha, B. N.; Wang, H.; Khan, N.; ...

2011-08-15

The origin of high background electron concentration (n) in In xGa 1-xN alloys has been investigated. A shallow donor was identified as having an energy level (E D1) that decreases with x (E D1 = 16 meV at x = 0 and E D1 = 0 eV at x ~ 0.5) and that crossover the conduction band at x ~ 0.5. This shallow donor is believed to be the most probable cause of high n in InGaN. This understanding is consistent with the fact that n increases sharply with an increase in x and becomes constant for x > 0.5.more » A continuous reduction in n was obtained by increasing the V/III ratio during the epilayer growth, suggesting that nitrogen vacancy-related impurities are a potential cause of the shallow donors and high background electron concentration in InGaN« less

Regimes of enhanced electromagnetic emission in beam-plasma interactions

NASA Astrophysics Data System (ADS)

Timofeev, I. V.; Annenkov, V. V.; Arzhannikov, A. V.

2015-11-01

The ways to improve the efficiency of electromagnetic waves generation in laboratory experiments with high-current relativistic electron beams injected into a magnetized plasma are discussed. It is known that such a beam can lose, in a plasma, a significant part of its energy by exciting a high level of turbulence and heating plasma electrons. Beam-excited plasma oscillations may simultaneously participate in nonlinear processes resulting in a fundamental and second harmonic emissions. It is obvious, however, that in the developed plasma turbulence the role of these emissions in the total energy balance is always negligible. In this paper, we investigate whether electromagnetic radiation generated in the beam-plasma system can be sufficiently enhanced by the direct linear conversion of resonant beam-driven modes into electromagnetic ones on preformed regular inhomogeneities of plasma density. Due to the high power of relativistic electron beams, the mechanism discussed may become the basis for the generator of powerful sub-terahertz radiation.

Electronic Devices with Strontium Barrier Film and Process for Making Same

DTIC Science & Technology

1998-08-20

structure of the barrier film on an atomic level where the barrier film is comprised of a plurality of contiguous monolayers, while FIG. 7B shows another...another embodiment where the barrier film is comprised of a plurality of contiguous monolayers in which different monolayers thereof are formed of...High Energy Electron 10 Diffraction (RHEED) diagnostic system directed toward the substrate 26. A diffusion barrier precursor compound effusion

Electronic Devices with Composite Atomic Barrier Film and Process for Making Same

DTIC Science & Technology

1998-08-20

structure of the barrier film on an atomic level where the barrier film is comprised of a plurality of contiguous monolayers, while FIG. 7B shows...another embodiment where the barrier film is comprised of a plurality of contiguous monolayers in which different monolayers thereof are formed of...High Energy Electron 10 Diffraction (RHEED) diagnostic system directed toward the substrate 26. A diffusion barrier precursor compound effusion

Control architecture for an adaptive electronically steerable flash lidar and associated instruments

NASA Astrophysics Data System (ADS)

Ruppert, Lyle; Craner, Jeremy; Harris, Timothy

2014-09-01

An Electronically Steerable Flash Lidar (ESFL), developed by Ball Aerospace & Technologies Corporation, allows realtime adaptive control of configuration and data-collection strategy based on recent or concurrent observations and changing situations. This paper reviews, at a high level, some of the algorithms and control architecture built into ESFL. Using ESFL as an example, it also discusses the merits and utility such adaptable instruments in Earth-system studies.

Photodissociation of CS from Excited Rovibrational Levels

NASA Astrophysics Data System (ADS)

Pattillo, R. J.; Cieszewski, R.; Stancil, P. C.; Forrey, R. C.; Babb, J. F.; McCann, J. F.; McLaughlin, B. M.

2018-05-01

Accurate photodissociation cross sections have been computed for transitions from the X 1Σ+ ground electronic state of CS to six low-lying excited electronic states. New ab initio potential curves and transition dipole moment functions have been obtained for these computations using the multi-reference configuration interaction approach with the Davidson correction (MRCI+Q) and aug-cc-pV6Z basis sets. State-resolved cross sections have been computed for transitions from nearly the full range of rovibrational levels of the X 1Σ+ state and for photon wavelengths ranging from 500 Å to threshold. Destruction of CS via predissociation in highly excited electronic states originating from the rovibrational ground state is found to be unimportant. Photodissociation cross sections are presented for temperatures in the range between 1000 and 10,000 K, where a Boltzmann distribution of initial rovibrational levels is assumed. Applications of the current computations to various astrophysical environments are briefly discussed focusing on photodissociation rates due to the standard interstellar and blackbody radiation fields.

Packaging Technologies for High Temperature Electronics and Sensors

NASA Technical Reports Server (NTRS)

Chen, Liangyu; Hunter, Gary W.; Neudeck, Philip G.; Beheim, Glenn M.; Spry, David J.; Meredith, Roger D.

2013-01-01

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500degC silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chiplevel packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550degC. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500degC for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500degC are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

A Proteomic View at the Biochemistry of Syntrophic Butyrate Oxidation in Syntrophomonas wolfei

PubMed Central

Schmidt, Alexander; Müller, Nicolai; Schink, Bernhard; Schleheck, David

2013-01-01

In syntrophic conversion of butyrate to methane and CO2, butyrate is oxidized to acetate by secondary fermenting bacteria such as Syntrophomonas wolfei in close cooperation with methanogenic partner organisms, e.g., Methanospirillum hungatei. This process involves an energetically unfavourable shift of electrons from the level of butyryl-CoA oxidation to the substantially lower redox potential of proton and/or CO2 reduction, in order to transfer these electrons to the methanogenic partner via hydrogen and/or formate. In the present study, all prominent membrane-bound and soluble proteins expressed in S. wolfei specifically during syntrophic growth with butyrate, in comparison to pure-culture growth with crotonate, were examined by one- and two-dimensional gel electrophoresis, and identified by peptide fingerprinting-mass spectrometry. A membrane-bound, externally oriented, quinone-linked formate dehydrogenase complex was expressed at high level specifically during syntrophic butyrate oxidation, comprising a selenocystein-linked catalytic subunit with a membrane-translocation pathway signal (TAT), a membrane-bound iron-sulfur subunit, and a membrane-bound cytochrome. Soluble hydrogenases were expressed at high levels specifically during growth with crotonate. The results were confirmed by native protein gel electrophoresis, by formate dehydrogenase and hydrogenase-activity staining, and by analysis of formate dehydrogenase and hydrogenase activities in intact cells and cell extracts. Furthermore, constitutive expression of a membrane-bound, internally oriented iron-sulfur oxidoreductase (DUF224) was confirmed, together with expression of soluble electron-transfer flavoproteins (EtfAB) and two previously identified butyryl-CoA dehydrogenases. Our findings allow to depict an electron flow scheme for syntrophic butyrate oxidation in S. wolfei. Electrons derived from butyryl-CoA are transferred through a membrane-bound EtfAB:quinone oxidoreductase (DUF224) to a menaquinone cycle and further via a b-type cytochrome to an externally oriented formate dehydrogenase. Hence, an ATP hydrolysis-driven proton-motive force across the cytoplasmatic membrane would provide the energy input for the electron potential shift necessary for formate formation. PMID:23468890

Production of high-density highly-ionized helicon plasmas in the ProtoMPEX

NASA Astrophysics Data System (ADS)

Caneses, J. F.; Kafle, N.; Showers, M.; Goulding, R. H.; Biewer, T. M.; Caughman, J. B. O.; Bigelow, T.; Rapp, J.

2017-10-01

High-density (2-6e19 m-3) Deuterium helicon plasmas in the ProtoMPEX have been produced that successfully use differential pumping to produce neutral gas pressures suitable for testing the RF electron and ion heating concepts. To minimize collisional losses when heating electrons and ions, plasmas with very low neutral gas content (<< 0.1 Pa) in the heating sections are required. This requirement is typically not compatible with the neutral gas pressures (1-2 Pa) commonly used in high-density light-ion helicon sources. By using skimmers, a suitable gas injection scheme and long duration discharges (>0.3 s), high-density plasmas with very low neutral gas pressures (<< 0.1 Pa) in the RF heating sections have been produced. Measurements indicate the presence of a highly-ionized plasma column and that discharges lasting at least 0.3 s are required to significantly reduce the neutral gas pressure in the RF heating sections to levels suitable for investigating electron/ion RF heating concepts in this linear configuration. This work was supported by the US. D.O.E. contract DE-AC05-00OR22725.

Copper-related defects in In0.53Ga0.47As grown by liquid-phase epitaxy

NASA Astrophysics Data System (ADS)

Tilly, L. P.; Grimmeiss, H. G.; Hansson, P. O.

1993-01-01

High-purity In0.53Ga0.47As lattice matched to InP was grown by liquid-phase epitaxy and used for the study of Cu-related defects. The samples had a free-electron carrier concentration of n=5.0×1014 cm-3 and an electron mobility of μ77 K=44 000 cm2/V s. A Cu-related acceptor level 25 meV above the valence-band edge was identified using photoluminescence measurements. Comparing the energy position of this shallow acceptor level with the Ev+157.8-meV Cu-acceptor level in GaAs supports the assumption of an internal energy reference level [J. M. Langer, C. Delerue, M. Lannoo, and H. Heinrich, Phys. Rev. B 38, 7723 (1988)] common to GaAs and InxGa1-xAs.

Highly scalable multichannel mesh electronics for stable chronic brain electrophysiology

PubMed Central

Fu, Tian-Ming; Hong, Guosong; Viveros, Robert D.; Zhou, Tao

2017-01-01

Implantable electrical probes have led to advances in neuroscience, brain−machine interfaces, and treatment of neurological diseases, yet they remain limited in several key aspects. Ideally, an electrical probe should be capable of recording from large numbers of neurons across multiple local circuits and, importantly, allow stable tracking of the evolution of these neurons over the entire course of study. Silicon probes based on microfabrication can yield large-scale, high-density recording but face challenges of chronic gliosis and instability due to mechanical and structural mismatch with the brain. Ultraflexible mesh electronics, on the other hand, have demonstrated negligible chronic immune response and stable long-term brain monitoring at single-neuron level, although, to date, it has been limited to 16 channels. Here, we present a scalable scheme for highly multiplexed mesh electronics probes to bridge the gap between scalability and flexibility, where 32 to 128 channels per probe were implemented while the crucial brain-like structure and mechanics were maintained. Combining this mesh design with multisite injection, we demonstrate stable 128-channel local field potential and single-unit recordings from multiple brain regions in awake restrained mice over 4 mo. In addition, the newly integrated mesh is used to validate stable chronic recordings in freely behaving mice. This scalable scheme for mesh electronics together with demonstrated long-term stability represent important progress toward the realization of ideal implantable electrical probes allowing for mapping and tracking single-neuron level circuit changes associated with learning, aging, and neurodegenerative diseases. PMID:29109247

A combined photoelectron spectroscopy and relativistic ab initio studies of the electronic structures of UFO and UFO(-).

PubMed

Roy, Soumendra K; Jian, Tian; Lopez, Gary V; Li, Wei-Li; Su, Jing; Bross, David H; Peterson, Kirk A; Wang, Lai-Sheng; Li, Jun

2016-02-28

The observation of the gaseous UFO(-) anion is reported, which is investigated using photoelectron spectroscopy and relativisitic ab initio calculations. Two strong photoelectron bands are observed at low binding energies due to electron detachment from the U-7sσ orbital. Numerous weak detachment bands are also observed due to the strongly correlated U-5f electrons. The electron affinity of UFO is measured to be 1.27(3) eV. High-level relativistic quantum chemical calculations have been carried out on the ground state and many low-lying excited states of UFO to help interpret the photoelectron spectra and understand the electronic structure of UFO. The ground state of UFO(-) is linear with an O-U-F structure and a (3)H4 spectral term derived from a U 7sσ(2)5fφ(1)5fδ(1) electron configuration, whereas the ground state of neutral UFO has a (4)H(7/2) spectral term with a U 7sσ(1)5fφ(1)5fδ(1) electron configuration. Strong electron correlation effects are found in both the anionic and neutral electronic configurations. In the UFO neutral, a high density of electronic states with strong configuration mixing is observed in most of the scalar relativistic and spin-orbit coupled states. The strong electron correlation, state mixing, and spin-orbit coupling of the electronic states make the excited states of UFO very challenging for accurate quantum chemical calculations.

A combined photoelectron spectroscopy and relativistic ab initio studies of the electronic structures of UFO and UFO-

NASA Astrophysics Data System (ADS)

Roy, Soumendra K.; Jian, Tian; Lopez, Gary V.; Li, Wei-Li; Su, Jing; Bross, David H.; Peterson, Kirk A.; Wang, Lai-Sheng; Li, Jun

2016-02-01

The observation of the gaseous UFO- anion is reported, which is investigated using photoelectron spectroscopy and relativisitic ab initio calculations. Two strong photoelectron bands are observed at low binding energies due to electron detachment from the U-7sσ orbital. Numerous weak detachment bands are also observed due to the strongly correlated U-5f electrons. The electron affinity of UFO is measured to be 1.27(3) eV. High-level relativistic quantum chemical calculations have been carried out on the ground state and many low-lying excited states of UFO to help interpret the photoelectron spectra and understand the electronic structure of UFO. The ground state of UFO- is linear with an O-U-F structure and a 3H4 spectral term derived from a U 7sσ25fφ15fδ1 electron configuration, whereas the ground state of neutral UFO has a 4H7/2 spectral term with a U 7sσ15fφ15fδ1 electron configuration. Strong electron correlation effects are found in both the anionic and neutral electronic configurations. In the UFO neutral, a high density of electronic states with strong configuration mixing is observed in most of the scalar relativistic and spin-orbit coupled states. The strong electron correlation, state mixing, and spin-orbit coupling of the electronic states make the excited states of UFO very challenging for accurate quantum chemical calculations.

Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Padilla, J. L., E-mail: jose.padilladelatorre@epfl.ch; Alper, C.; Ionescu, A. M.

2015-06-29

We investigate the effect of pseudo-bilayer configurations at low operating voltages (≤0.5 V) in the heterogate germanium electron-hole bilayer tunnel field-effect transistor (HG-EHBTFET) compared to the traditional bilayer structures of EHBTFETs arising from semiclassical simulations where the inversion layers for electrons and holes featured very symmetric profiles with similar concentration levels at the ON-state. Pseudo-bilayer layouts are attained by inducing a certain asymmetry between the top and the bottom gates so that even though the hole inversion layer is formed at the bottom of the channel, the top gate voltage remains below the required value to trigger the formation of themore » inversion layer for electrons. Resulting benefits from this setup are improved electrostatic control on the channel, enhanced gate-to-gate efficiency, and higher I{sub ON} levels. Furthermore, pseudo-bilayer configurations alleviate the difficulties derived from confining very high opposite carrier concentrations in very thin structures.« less

Superconductivity in an electron band just above the Fermi level: possible route to BCS-BEC superconductivity.

PubMed

Okazaki, K; Ito, Y; Ota, Y; Kotani, Y; Shimojima, T; Kiss, T; Watanabe, S; Chen, C-T; Niitaka, S; Hanaguri, T; Takagi, H; Chainani, A; Shin, S

2014-02-28

Conventional superconductivity follows Bardeen-Cooper-Schrieffer(BCS) theory of electrons-pairing in momentum-space, while superfluidity is the Bose-Einstein condensation(BEC) of atoms paired in real-space. These properties of solid metals and ultra-cold gases, respectively, are connected by the BCS-BEC crossover. Here we investigate the band dispersions in FeTe(0.6)Se(0.4)(Tc = 14.5 K ~ 1.2 meV) in an accessible range below and above the Fermi level(EF) using ultra-high resolution laser angle-resolved photoemission spectroscopy. We uncover an electron band lying just 0.7 meV (~8 K) above EF at the Γ-point, which shows a sharp superconducting coherence peak with gap formation below Tc. The estimated superconducting gap Δ and Fermi energy [Symbol: see text]F indicate composite superconductivity in an iron-based superconductor, consisting of strong-coupling BEC in the electron band and weak-coupling BCS-like superconductivity in the hole band. The study identifies the possible route to BCS-BEC superconductivity.

Electronic and spectroscopic characterizations of SNP isomers

NASA Astrophysics Data System (ADS)

Trabelsi, Tarek; Al Mogren, Muneerah Mogren; Hochlaf, Majdi; Francisco, Joseph S.

2018-02-01

High-level ab initio electronic structure calculations were performed to characterize SNP isomers. In addition to the known linear SNP, cyc-PSN, and linear SPN isomers, we identified a fourth isomer, linear PSN, which is located ˜2.4 eV above the linear SNP isomer. The low-lying singlet and triplet electronic states of the linear SNP and SPN isomers were investigated using a multi-reference configuration interaction method and large basis set. Several bound electronic states were identified. However, their upper rovibrational levels were predicted to pre-dissociate, leading to S + PN, P + NS products, and multi-step pathways were discovered. For the ground states, a set of spectroscopic parameters were derived using standard and explicitly correlated coupled-cluster methods in conjunction with augmented correlation-consistent basis sets extrapolated to the complete basis set limit. We also considered scalar and core-valence effects. For linear isomers, the rovibrational spectra were deduced after generation of their 3D-potential energy surfaces along the stretching and bending coordinates and variational treatments of the nuclear motions.

Search for Cosmic-Ray Electron and Positron Anisotropies with Seven Years of Fermi Large Area Telescope Data.

PubMed

Abdollahi, S; Ackermann, M; Ajello, M; Albert, A; Atwood, W B; Baldini, L; Barbiellini, G; Bellazzini, R; Bissaldi, E; Bloom, E D; Bonino, R; Bottacini, E; Brandt, T J; Bruel, P; Buson, S; Caragiulo, M; Cavazzuti, E; Chekhtman, A; Ciprini, S; Costanza, F; Cuoco, A; Cutini, S; D'Ammando, F; de Palma, F; Desiante, R; Digel, S W; Di Lalla, N; Di Mauro, M; Di Venere, L; Donaggio, B; Drell, P S; Favuzzi, C; Focke, W B; Fukazawa, Y; Funk, S; Fusco, P; Gargano, F; Gasparrini, D; Giglietto, N; Giordano, F; Giroletti, M; Green, D; Guiriec, S; Harding, A K; Jogler, T; Jóhannesson, G; Kamae, T; Kuss, M; Larsson, S; Latronico, L; Li, J; Longo, F; Loparco, F; Lubrano, P; Magill, J D; Malyshev, D; Manfreda, A; Mazziotta, M N; Meehan, M; Michelson, P F; Mitthumsiri, W; Mizuno, T; Moiseev, A A; Monzani, M E; Morselli, A; Negro, M; Nuss, E; Ohsugi, T; Omodei, N; Paneque, D; Perkins, J S; Pesce-Rollins, M; Piron, F; Pivato, G; Principe, G; Rainò, S; Rando, R; Razzano, M; Reimer, A; Reimer, O; Sgrò, C; Simone, D; Siskind, E J; Spada, F; Spandre, G; Spinelli, P; Strong, A W; Tajima, H; Thayer, J B; Torres, D F; Troja, E; Vandenbroucke, J; Zaharijas, G; Zimmer, S

2017-03-03

The Large Area Telescope on board the Fermi Gamma-ray Space Telescope has collected the largest ever sample of high-energy cosmic-ray electron and positron events since the beginning of its operation. Potential anisotropies in the arrival directions of cosmic-ray electrons or positrons could be a signature of the presence of nearby sources. We use almost seven years of data with energies above 42 GeV processed with the Pass 8 reconstruction. The present data sample can probe dipole anisotropies down to a level of 10^{-3}. We take into account systematic effects that could mimic true anisotropies at this level. We present a detailed study of the event selection optimization of the cosmic-ray electrons and positrons to be used for anisotropy searches. Since no significant anisotropies have been detected on any angular scale, we present upper limits on the dipole anisotropy. The present constraints are among the strongest to date probing the presence of nearby young and middle-aged sources.

Probing the electronic structure of UO+ with high-resolution photoelectron spectroscopy.

PubMed

Goncharov, Vasiliy; Kaledin, Leonid A; Heaven, Michael C

2006-10-07

The pulsed field ionization-zero kinetic energy photoelectron technique has been used to observe the low-lying energy levels of UO+. Rotationally resolved spectra were recorded for the ground state and the first nine electronically excited states. Extensive vibrational progressions were characterized. Omega+ assignments were unambiguously determined from the first rotational lines identified in each vibronic band. Term energies, vibrational frequencies, and anharmonicity constants for low-lying energy levels of UO+ are reported. In addition, accurate values for the ionization energies for UO [48,643.8(2) cm(-1)] and U [49,957.6(2) cm(-1)] were determined. The pattern of low-lying electronic states for UO+ indicates that they originate from the U3+(5f3)O2- configuration, where the uranium ion-centered interactions between the 5f electrons are significantly stronger than interactions with the intramolecular electric field. The latter lifts the degeneracy of U3+ ion-core states, but the atomic angular momentum quantum numbers remain reasonably well defined.

Paper-Based Analytical Devices Relying on Visible-Light-Enhanced Glucose/Air Biofuel Cells.

PubMed

Wu, Kaiqing; Zhang, Yan; Wang, Yanhu; Ge, Shenguang; Yan, Mei; Yu, Jinghua; Song, Xianrang

2015-11-04

A strategy that combines visible-light-enhanced biofuel cells (BFCs) and electrochemical immunosensor into paper-based analytical devices was proposed for sensitive detection of the carbohydrate antigen 15-3 (CA15-3). The gold nanoparticle modified paper electrode with large surface area and good conductibility was applied as an effective matrix for primary antibodies. The glucose dehydrogenase (GDH) modified gold-silver bimetallic nanoparticles were used as bioanodic biocatalyst and signal magnification label. Poly(terthiophene) (pTTh), a photoresponsive conducting polymer, served as catalyst in cathode for the reduction of oxygen upon illumination by visible light. In the bioanode, electrons were generated through the oxidation of glucose catalyzed by GDH. The amount of electrons is determined by the amount of GDH, which finally depended on the amount of CA15-3. In the cathode, electrons from the bioanode could combine with the generated holes in the HOMO energy level of cathode catalysts pTTh. Meanwhile, the high energy level photoexcited electrons were generated in the LUMO energy level and involved in the oxygen reduction reaction, finally resulting in an increasing current and a decreasing overpotential. According to the current signal, simple and efficient detection of CA15-3 was achieved.

[Molecular responses of photosynthetic apparatus of plants to long term irradiance changes].

PubMed

Adamiec, Małgorzata; Jackowski, Grzegorz

2008-01-01

In response to long term (at least 1-3 h) irradiance changes the responses are elicited at the level of structure and function of photosynthetic apparatus of plants which are thought to be aimed to keep the balance between the level of excitation energy funneled to the reaction centers of the photosystems by energetic antennae and the utilization of this energy in the form of photosynthetic electron transfer and dark reactions. At high vs medium irradiances the rate of excitation energy transfer via LHCII is reduced while the rate of electron flow and photosynthetic dark reactions is increased. The reaction at LHCII level stems from the reduction of its pool per PSII reaction center and the regulatory events comprise changes in the expression of LHCII apoproteins and/or chi b biosynthesis. The basis for higher electron flow capabilities lies in significant increases in the content of some electron carriers and the catalytic activity of ATP synthase. The upregulation of photosynthetic dark reaction in turn is due to the activation of signaling pathways leading to the increase in the pool and catalytic activities of rubisco and other Calvin cycle enzymes.

Defective TiO 2 with high photoconductive gain for efficient and stable planar heterojunction perovskite solar cells

DOE PAGES

Li, Yanbo; Cooper, Jason K.; Liu, Wenjun; ...

2016-08-18

Formation of planar heterojunction perovskite solar cells exhibiting both high efficiency and stability under continuous operation remains a challenge. Here, we show this can be achieved by using a defective TiO 2 thin film as the electron transport layer. TiO 2 layers with native defects are deposited by electron beam evaporation in an oxygen-deficient environment. Deep-level hole traps are introduced in the TiO 2 layers and contribute to a high photoconductive gain and reduced photocatalytic activity. The high photoconductivity of the TiO 2 electron transport layer leads to improved efficiency for the fabricated planar devices. A maximum power conversion efficiencymore » of 19.0% and an average PCE of 17.5% are achieved. In addition, the reduced photocatalytic activity of the TiO 2 layer leads to enhanced long-Term stability for the planar devices. Under continuous operation near the maximum power point, an efficiency of over 15.4% is demonstrated for 100 h.« less

Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance

NASA Astrophysics Data System (ADS)

Pi, T. W.; Chen, W. S.; Lin, Y. H.; Cheng, Y. T.; Wei, G. J.; Lin, K. Y.; Cheng, C.-P.; Kwo, J.; Hong, M.

2017-01-01

This study investigates the origin of long-puzzled high frequency dispersion on the accumulation region of capacitance-voltage characteristics in an n-type GaAs-based metal-oxide-semiconductor. Probed adatoms with a high Pauling electronegativity, Ag and Au, unexpectedly donate charge to the contacted As/Ga atoms of as-grown α2 GaAs(001)-2 × 4 surfaces. The GaAs surface atoms behave as charge acceptors, and if not properly passivated, they would trap those electrons accumulated at the oxide and semiconductor interface under a positive bias. The exemplified core-level spectra of the Al2O3/n-GaAs(001)-2 × 4 and the Al2O3/n-GaAs(001)-4 × 6 interfaces exhibit remnant of pristine surface As emission, thereby causing high frequency dispersion in the accumulation region. For the p-type GaAs, electrons under a negatively biased condition are expelled from the interface, thereby avoiding becoming trapped.

Hierarchical self-assembly of a bow-shaped molecule bearing self-complementary hydrogen bonding sites into extended supramolecular assemblies.

PubMed

Ikeda, Masato; Nobori, Tadahito; Schmutz, Marc; Lehn, Jean-Marie

2005-01-07

The bow-shaped molecule 1 bearing a self-complementary DAAD-ADDA (D=donor A=acceptor) hydrogen-bonding array generates, in hydrocarbon solvents, highly ordered supramolecular sheet aggregates that subsequently give rise to gels by formation of an entangled network. The process of hierarchical self-assembly of compound 1 was investigated by the concentration and temperature dependence of UV-visible and (1)H NMR spectra, fluorescence spectra, and electron microscopy data. The temperature dependence of the UV-visible spectra indicates a highly cooperative process for the self-assembly of compound 1 in decaline. The electron micrograph of the decaline solution of compound 1 (1.0 mM) revealed supramolecular sheet aggregates forming an entangled network. The selected area electronic diffraction patterns of the supramolecular sheet aggregates were typical for single crystals, indicative of a highly ordered assembly. The results exemplify the generation, by hierarchical self-assembly, of highly organized supramolecular materials presenting novel collective properties at each level of organization.

Quantifying Energetic Electron Precipitation And Its Effect on Atmospheric Chemistry

NASA Astrophysics Data System (ADS)

Huang, C. L.; Spence, H. E.; Smith, S. S.; Duderstadt, K. A.; Boyd, A. J.; Geoffrey, R.; Blake, J. B.; Fennell, J. F.; Claudepierre, S. G.; Turner, D. L.; Crew, A. B.; Klumpar, D. M.; Shumko, M.; Johnson, A.; Sample, J. G.

2017-12-01

In this study we quantify the total radiation belt electron loss through precipitation into the atmosphere, and simulate the electrons' contribution to changing the atmospheric composition. We use total radiation belt electron content (TRBEC) calculated from Van Allen Probes ECT/MagEIS data to estimate the precipitation during electron loss events. The new TRBEC index is a high-level quantity for monitoring the entire radiation belt and has the benefit of removing both internal transport and the adiabatic effect. To assess the electron precipitation rate, we select TRBEC loss events that show no outward transport in the phase space density data in order to exclude drift magnetopause loss. Then we use FIREBIRD data to estimate and constrain the precipitation loss when it samples near the loss cone. Finally, we estimate the impact of electron precipitation on the composition of the upper and middle atmosphere using global climate simulations.

Optical pulse evolution in the Stanford free-electron laser and in a tapered wiggler

NASA Technical Reports Server (NTRS)

Colson, W. B.

1982-01-01

The Stanford free electron laser (FEL) oscillator is driven by a series of electron pulses from a high-quality superconducting linear accelerator (LINAC). The electrons pass through a transverse and nearly periodic magnetic field, a 'wiggler', to oscillate and amplify a superimposed optical pulse. The rebounding optical pulse must be closely synchronized with the succession of electron pulses from the accelerator, and can take on a range of structures depending on the precise degree of synchronism. Small adjustments in desynchronism can make the optical pulse either much shorter or longer than the electron pulse, and can cause significant subpulse structure. The oscillator start-up from low level incoherent fields is discussed. The effects of desynchronism on coherent pulse propagation are presented and compared with recent Stanford experiments. The same pulse propagation effects are studied for a magnet design with a tapered wavelength in which electrons are trapped in the ponderomotive potential.

Use of Total Electron Content data to analyze ionosphere electron density gradients

NASA Astrophysics Data System (ADS)

Nava, B.; Radicella, S. M.; Leitinger, R.; Coisson, P.

In presence of electron density gradients the thin shell approximation for the ionosphere used together with a simple mapping function to convert slant Total Electron Content TEC to vertical TEC could lead to TEC conversion errors Therefore these mapping function errors can be used to identify the effects of the electron density gradients in the ionosphere In the present work high precision GPS derived slant TEC data have been used to investigate the effects of the electron density gradients in the middle and low latitude ionosphere under geomagnetic quiet and disturbed conditions In particular the data corresponding to the geographic area of the American sector for the days 5-7 April 2000 have been used to perform a complete analysis of mapping function errors based on the coinciding pierce point technique The results clearly illustrate the electron density gradient effects according to the locations considered and to the actual levels of disturbance of the ionosphere

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreno, Gilbert

The objective for this project is to develop thermal management strategies to enable efficient and high-temperature wide-bandgap (WBG)-based power electronic systems (e.g., emerging inverter and DC-DC converter). Device- and system-level thermal analyses are conducted to determine the thermal limitations of current automotive power modules under elevated device temperature conditions. Additionally, novel cooling concepts and material selection will be evaluated to enable high-temperature silicon and WBG devices in power electronics components. WBG devices (silicon carbide [SiC], gallium nitride [GaN]) promise to increase efficiency, but will be driven as hard as possible. This creates challenges for thermal management and reliability.

UV absorption spectrum and photodissociation channels of the simplest Criegee intermediate (CH2OO).

PubMed

Dawes, Richard; Jiang, Bin; Guo, Hua

2015-01-14

The lowest-lying singlet states of the simplest Criegee intermediate (CH2OO) have been characterized along the O-O dissociation coordinate using explicitly correlated MRCI-F12 electronic structure theory and large active spaces. It is found that a high-level treatment of dynamic electron-correlation is essential to accurately describe these states. A significant well on the B-state is identified at the MRCI-F12 level with an equilibrium structure that differs substantially from that of the ground X-state. This well is presumably responsible for the apparent vibrational structure in some experimental UV absorption spectra, analogous to the structured Huggins band of the iso-electronic ozone. The B-state potential in the Franck-Condon region is sufficiently accurate that an absorption spectrum calculated with a one-dimensional model agrees remarkably well with experiment.

Auger electron diffraction study of the growth of Fe(001) films on ZnSe(001)

NASA Astrophysics Data System (ADS)

Jonker, B. T.; Prinz, G. A.

1991-03-01

The growth of Fe films on ZnSe(001) epilayers and bulk GaAs(001) substrates has been studied to determine the mode of film growth, the formation of the interface, and the structure of the overlayer at the 1-10 monolayer level. Auger electron diffraction (AED), x-ray photoelectron spectroscopy (XPS), and reflection high-energy electron diffraction data are obtained for incremental deposition of the Fe(001) overlayer. The coverage dependence of the AED forward scattering peaks reveals a predominantly layer-by-layer mode of film growth at 175 °C on ZnSe, while a more three-dimensional growth mode occurs on the oxide-desorbed GaAs(001) substrate. XPS studies of the semiconductor 3d levels indicate that the Fe/ZnSe interface is less reactive than the Fe/GaAs interface.

Personal electronics printing via tapping mode composite liquid metal ink delivery and adhesion mechanism

NASA Astrophysics Data System (ADS)

Zheng, Yi; He, Zhi-Zhu; Yang, Jun; Liu, Jing

2014-04-01

Printed electronics is becoming increasingly important in a variety of newly emerging areas. However, restricted to the rather limited conductive inks and available printing strategies, the current electronics manufacture is usually confined to industry level. Here, we show a highly cost-effective and entirely automatic printing way towards personal electronics making, through introducing a tapping-mode composite fluid delivery system. Fundamental mechanisms regarding the reliable printing, transfer and adhesion of the liquid metal inks on the substrate were disclosed through systematic theoretical interpretation and experimental measurements. With this liquid metal printer, a series of representative electronic patterns spanning from single wires to desired complex configurations such as integrated circuit (IC), printed-circuits-on-board (PCB), electronic paintings, or more do-it-yourself (DIY) devices, were demonstrated to be printed out with high precision in a moment. And the total machine cost already reached personally affordable price. This is hard to achieve by a conventional PCB technology which generally takes long time and is material, water and energy consuming, while the existing printed electronics is still far away from the real direct printing goal. The present work opens the way for large scale personal electronics manufacture and is expected to generate important value for the coming society.

Personal electronics printing via tapping mode composite liquid metal ink delivery and adhesion mechanism.

PubMed

Zheng, Yi; He, Zhi-Zhu; Yang, Jun; Liu, Jing

2014-04-04

Printed electronics is becoming increasingly important in a variety of newly emerging areas. However, restricted to the rather limited conductive inks and available printing strategies, the current electronics manufacture is usually confined to industry level. Here, we show a highly cost-effective and entirely automatic printing way towards personal electronics making, through introducing a tapping-mode composite fluid delivery system. Fundamental mechanisms regarding the reliable printing, transfer and adhesion of the liquid metal inks on the substrate were disclosed through systematic theoretical interpretation and experimental measurements. With this liquid metal printer, a series of representative electronic patterns spanning from single wires to desired complex configurations such as integrated circuit (IC), printed-circuits-on-board (PCB), electronic paintings, or more do-it-yourself (DIY) devices, were demonstrated to be printed out with high precision in a moment. And the total machine cost already reached personally affordable price. This is hard to achieve by a conventional PCB technology which generally takes long time and is material, water and energy consuming, while the existing printed electronics is still far away from the real direct printing goal. The present work opens the way for large scale personal electronics manufacture and is expected to generate important value for the coming society.

Personal electronics printing via tapping mode composite liquid metal ink delivery and adhesion mechanism

PubMed Central

Zheng, Yi; He, Zhi-Zhu; Yang, Jun; Liu, Jing

2014-01-01

Printed electronics is becoming increasingly important in a variety of newly emerging areas. However, restricted to the rather limited conductive inks and available printing strategies, the current electronics manufacture is usually confined to industry level. Here, we show a highly cost-effective and entirely automatic printing way towards personal electronics making, through introducing a tapping-mode composite fluid delivery system. Fundamental mechanisms regarding the reliable printing, transfer and adhesion of the liquid metal inks on the substrate were disclosed through systematic theoretical interpretation and experimental measurements. With this liquid metal printer, a series of representative electronic patterns spanning from single wires to desired complex configurations such as integrated circuit (IC), printed-circuits-on-board (PCB), electronic paintings, or more do-it-yourself (DIY) devices, were demonstrated to be printed out with high precision in a moment. And the total machine cost already reached personally affordable price. This is hard to achieve by a conventional PCB technology which generally takes long time and is material, water and energy consuming, while the existing printed electronics is still far away from the real direct printing goal. The present work opens the way for large scale personal electronics manufacture and is expected to generate important value for the coming society. PMID:24699375

Beyond the Quantum Hall Effect: New Phases of 2D Electrons at High Magnetic Field

NASA Astrophysics Data System (ADS)

Eisenstein, James

2007-03-01

In this talk I will discuss recent experiments on high mobility single and double layer 2D electron systems in which collective phases lying outside the usual quantum Hall effect paradigm have been detected and studied. For example, in single layer 2D systems near half-filling of highly excited Landau levels new states characterized by a massive anisotropy in the electrical resistivity of the sample are observed at very low temperature. The anisotropy has been widely interpreted as the signature of a new class of correlated electron phases which incorporate a stripe-like charge density modulation. Orientational ordering of small striped domains at low temperatures accounts for the resistive anisotropy and is reminiscent of the isotropic-to-nematic phase transition in classical liquid crystals. Double layer 2D electron systems possess collective phases not present in single layer systems. In particular, when the total number of electrons in the bilayer equals the degeneracy of a single Landau level, an unusual phase appears at small layer separation. This phase possesses a novel broken symmetry, spontaneous interlayer phase coherence, which has a number of dramatic experimental signatures. The interlayer tunneling conductance develops a strong and very sharp resonance around zero bias resembling the dc Josephson effect. At the same time, both the longitudinal and Hall resistances of the sample vanish at low temperatures when currents are driven in opposite directions through the two layers. These, and other observations are broadly consistent with theories in which the broken symmetry phase can equivalently be described as a pseudospin ferromagnet or an (imperfect) excitonic superfluid. This work reflects a collaboration with M.P. Lilly, K.B. Cooper, I.B. Spielman, M. Kellogg, L.A. Tracy, L.N. Pfeiffer, and K.W. West.

Observation of giant conductance fluctuations in a protein

NASA Astrophysics Data System (ADS)

Zhang, Bintian; Song, Weisi; Pang, Pei; Zhao, Yanan; Zhang, Peiming; Csabai, István; Vattay, Gábor; Lindsay, Stuart

2017-12-01

Proteins are insulating molecular solids, yet even those containing easily reduced or oxidized centers can have single-molecule electronic conductances that are too large to account for with conventional transport theories. Here, we report the observation of remarkably high electronic conductance states in an electrochemically inactive protein, the ∼200 kD α V β 3 extracellular domain of human integrin. Large current pulses (up to nA) were observed for long durations (many ms, corresponding to many pC of charge transfer) at large gap (>5 nm) distances in an STM when the protein was bound specifically by a small peptide ligand attached to the electrodes. The effect is greatly reduced when a homologous, weakly binding protein (α 4 β 1) is used as a control. In order to overcome the limitations of the STM, the time- and voltage-dependence of the conductance were further explored using a fixed-gap (5 nm) tunneling junction device that was small enough to trap a single protein molecule at any one time. Transitions to a high conductance (∼nS) state were observed, the protein being ‘on’ for times from ms to tenths of a second. The high-conductance states only occur above ∼100 mV applied bias, and thus are not an equilibrium property of the protein. Nanoamp two-level signals indicate the specific capture of a single molecule in an electrode gap functionalized with the ligand. This offers a new approach to label-free electronic detection of single protein molecules. Electronic structure calculations yield a distribution of energy level spacings that is consistent with a recently proposed quantum-critical state for proteins, in which small fluctuations can drive transitions between localized and band-like electronic states.

Observation of Giant Conductance Fluctuations in a Protein

PubMed Central

Zhang, Bintian; Song, Weisi; Pang, Pei; Zhao, Yanan; Zhang, Peiming; Csabai, István; Vattay, Gábor; Lindsay, Stuart

2017-01-01

Proteins are insulating molecular solids, yet even those containing easily reduced or oxidized centers can have single-molecule electronic conductances that are too large to account for with conventional transport theories. Here, we report the observation of remarkably high electronic conductance states in an electrochemically-inactive protein, the ~200 kD αVβ3 extracelluar domain of human integrin. Large current pulses (up to nA) were observed for long durations (many ms, corresponding to many pC of charge transfer) at large gap (>5nm) distances in an STM when the protein was bound specifically by a small peptide ligand attached to the electrodes. The effect is greatly reduced when a homologous, weakly-binding protein (α4β1) is used as a control. In order to overcome the limitations of the STM, the time- and voltage-dependence of the conductance were further explored using a fixed-gap (5 nm) tunneling junction device that was small enough to trap a single protein molecule at any one time. Transitions to a high conductance (~ nS) state were observed, the protein being “on” for times from ms to tenths of a second. The high-conductance states only occur above ~ 100mV applied bias, and thus are not an equilibrium property of the protein. Nanoamp two-level signals indicate the specific capture of a single molecule in an electrode gap functionalized with the ligand. This offers a new approach to label-free electronic detection of single protein molecules. Electronic structure calculations yield a distribution of energy level spacings that is consistent with a recently proposed quantum-critical state for proteins, in which small fluctuations can drive transitions between localized and band-like electronic states. PMID:29552645

Group III Acceptors with Shallow and Deep Levels in Silicon Carbide: ESR and ENDOR Studies

NASA Astrophysics Data System (ADS)

Il'in, I. V.; Uspenskaya, Yu. A.; Kramushchenko, D. D.; Muzafarova, M. V.; Soltamov, V. A.; Mokhov, E. N.; Baranov, P. G.

2018-04-01

Results of investigations of Group III acceptors (B, Al, and Ga) in crystals of silicon carbide using the most informative electron spin resonance and electron nuclear double resonance methods are presented. Structural models of the acceptors with shallow and deep levels are considered. In addition to the data obtained earlier, studies using high-frequency magnetic resonance were obtained, which allowed revealing orthorhombic deviations from the axial symmetry for the deep acceptors; theoretical analysis explains experimentally found shifts of g factors for the deep acceptors arising due to the orthorhombic deviations, which appear probably due to the Jahn-Teller effect.

New electron trap in p-type Czochralski silicon

NASA Technical Reports Server (NTRS)

Mao, B.-Y.; Lagowski, J.; Gatos, H. C.

1984-01-01

A new electron trap (acceptor level) was discovered in p-type Czochralski (CZ) silicon by current transient spectroscopy. The behavior of this trap was found to be similar to that of the oxygen thermal donors; thus, 450 C annealing increases the trap concentration while high-temperature annealing (1100-1200 C) leads to the virtual elimination of the trap. The new trap is not observed in either float-zone or n-type CZ silicon. Its energy level depends on the group III doping element in the sample. These findings suggest that the trap is related to oxygen, and probably to the acceptor impurity as well.

Beam impingement angle effects on secondary electron emission characteristics of textured pyrolytic graphite

NASA Technical Reports Server (NTRS)

Curren, A. N.; Jensen, K. A.

1984-01-01

Experimentally determined values of true secondary electron emission and relative values of reflected primary electron yield for untreated and ion-textured pyrolytic graphite over a range of primary electron energy levels and electron beam impingement angles are presented. Information required to develop high efficiency multistage depressed collectors (MDC's) for microwave amplifier traveling-wave tubes for space communication and aircraft applications is provided. To attain the highest possible MDC efficiencies, the electrode surfaces must have low secondary electron emission characteristics. Pyrolytic graphite, a chemically vapor-deposited material, is a particularly promising candidate for this application. The pyrolytic graphite surfaces studied were tested over a range of primary electron beam energies and beam impingement angles from 200 to 2000 eV and direct (0 deg) to near-grazing angles (85 deg), respectively. Surfaces both parallel to and normal to the planes of material deposition were examined. The true secondary electron emission and reflected primary electron yield characteristics of the pyrolytic graphite surfaces are compared to those of sooted control surfaces.

Model of resonant high harmonic generation in multi-electron systems

NASA Astrophysics Data System (ADS)

Redkin, P. V.; Ganeev, R. A.

2017-09-01

We extend the 4-step analytical model of resonant enhancement of high harmonic generation to the systems possessing resonant transitions of inner-shell electrons. Resonant enhancement is explained by lasing without inversion in a three-level system of ground, excited and shifted resonant states, which are coupled to the fundamental field and its high harmonics. The role of inelastic scattering is studied by simulation of an excited state’s population dynamics. It is shown that maximal gain is achieved when the energy shift between the excited state and resonant state is close to the energy of the fundamental photon. To prove the concept we demonstrate the enhancement of harmonics in the In plasma using different pumps.

Effective Detection of Mycotoxins by a Highly Luminescent Metal–Organic Framework

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Zhichao; Lustig, William P.; Zhang, Jingming

In this paper, we designed and synthesized a new luminescent metal–organic framework (LMOF). LMOF-241 is highly porous and emits strong blue light with high efficiency. We demonstrate for the first time that very fast and extremely sensitive optical detection can be achieved, making use of the fluorescence quenching of an LMOF material. The compound is responsive to Aflatoxin B1 at parts per billion level, which makes it the best performing luminescence-based chemical sensor to date. We studied the electronic properties of LMOF-241 and selected mycotoxins, as well as the extent of mycotoxin–LMOF interactions, employing theoretical methods. Finally, possible electron andmore » energy transfer mechanisms are discussed.« less

Effective Detection of Mycotoxins by a Highly Luminescent Metal–Organic Framework

DOE PAGES

Hu, Zhichao; Lustig, William P.; Zhang, Jingming; ...

2015-12-11

In this paper, we designed and synthesized a new luminescent metal–organic framework (LMOF). LMOF-241 is highly porous and emits strong blue light with high efficiency. We demonstrate for the first time that very fast and extremely sensitive optical detection can be achieved, making use of the fluorescence quenching of an LMOF material. The compound is responsive to Aflatoxin B1 at parts per billion level, which makes it the best performing luminescence-based chemical sensor to date. We studied the electronic properties of LMOF-241 and selected mycotoxins, as well as the extent of mycotoxin–LMOF interactions, employing theoretical methods. Finally, possible electron andmore » energy transfer mechanisms are discussed.« less

C70/C70:pentacene/pentacene organic heterojunction as the connecting layer for high performance tandem organic light-emitting diodes: Mechanism investigation of electron injection and transport

NASA Astrophysics Data System (ADS)

Guo, Qingxun; Yang, Dezhi; Chen, Jiangshan; Qiao, Xianfeng; Ahamad, Tansir; Alshehri, Saad M.; Ma, Dongge

2017-03-01

A high performance tandem organic light-emitting diode (OLED) is realized by employing a C70/C70:pentacene/pentacene organic heterojunction as the efficient charge generation layer (CGL). Not only more than two time enhancement of external quantum efficiency but also significant improvement in both power efficiency and lifetime are well achieved. The mechanism investigations find that the electron injection from the CGL to the adjacent electron transport layer (ETL) in tandem devices is injection rate-limited due to the high interface energy barrier between the CGL and the ETL. By the capacitance-frequency (C-F) and low temperature current density-voltage (J-V) characteristic analysis, we confirm that the electron transport is a space-charge-limited current process with exponential trap distribution. These traps are localized states below the lowest unoccupied molecular orbital edge inside the gap and would be filled with the upward shift of the Fermi level during the n-doping process. Furthermore, both the trap density (Ht) and the activation energy (Ea) could be carefully worked out through low temperature J-V measurements, which is very important for developing high performance tandem OLEDs.

Correlation lengths of the wigner-crystal order in a two-dimensional electron system at high magnetic fields.

PubMed

Ye, P D; Engel, L W; Tsui, D C; Lewis, R M; Pfeiffer, L N; West, K

2002-10-21

The insulator terminating the fractional quantum Hall series at low Landau level filling nu is generally taken to be a pinned Wigner crystal (WC), and exhibits a microwave resonance that is interpreted as a WC pinning mode. For a high quality sample at several densities, n, we find maxima in resonance peak frequency, f(pk), vs magnetic field, B. L, the correlation length of WC order, is calculated from f(pk). For each n, L vs nu tends at low nu toward a line with positive intercept; the fit is accurate over as much as a factor of 5 range of nu. The linear behavior is interpreted as due to B compressing the electron wave functions, to alter the effective electron-impurity interaction.

An experimental and theoretical study of the A˜ 2A″Π -X˜ 2A' band system of the jet-cooled HBBr/DBBr free radical

NASA Astrophysics Data System (ADS)

Gharaibeh, Mohammed; Clouthier, Dennis J.; Tarroni, Riccardo

2016-06-01

The electronic spectra of the HBBr and DBBr free radicals have been studied in depth. These species were prepared in a pulsed electric discharge jet using a precursor mixture of BBr3 vapor and H2 or D2 in high pressure argon. Transitions to the electronic excited state of the jet-cooled radicals were probed with laser-induced fluorescence and the ground state energy levels were measured from the single vibronic level emission spectra. HBBr has an extensive band system in the red which involves a linear-bent transition between the two Renner-Teller components of what would be a 2Π state at linearity. We have used high level ab initio theory to calculate potential energy surfaces for the bent 2A' ground state and the linear A˜ 2A″Π excited state and we have determined the ro-vibronic energy levels variationally, including spin orbit effects. The correspondence between the computed and experimentally observed transition frequencies, upper state level symmetries, and H and B isotope shifts was used to make reliable assignments. We have shown that the ground state barriers to linearity, which range from 10 000 cm-1 in HBF to 2700 cm-1 in BH2, are inversely related to the energy of the first excited 2Σ (2A') electronic state. This suggests that a vibronic coupling mechanism is responsible for the nonlinear equilibrium geometries of the ground states of the HBX free radicals.

Protective effects of Sapindus mukorossi Gaertn against fatty liver disease induced by high fat diet in rats.

PubMed

Peng, Qiuxian; Zhang, Qin; Xiao, Wei; Shao, Meng; Fan, Qin; Zhang, Hongwei; Zou, Yukai; Li, Xin; Xu, Wenxue; Mo, Zhixian; Cai, Hongbing

2014-07-18

Study the effects of alcohol extract of Sapindus mukorossi Gaertn (AESM) on the metabolism of blood fat, morphology of fenestrated liver sinusoidal endothelial cells (LSEC), and the ultrastructure of liver cells of the rats with non-alcoholic fatty liver disease (NAFLD). Divide SD rats into control group, model group, simvastatin (7.2 mg/kg) group, and S.mukorossi Gaertn group with high dosage (0.5 g/kg), moderate dosage (0.1 g/kg), and low dosage (0.05 g/kg). After feeding with fat-rich nutrients for 3 weeks and establishing the model of hepatic adipose, conduct intragastric administration and provide the rats with fat-rich nutrients at the same time. At the 43rd day, take blood sample and measure aminotransferase and different indexes of blood fat; take hepatic tissue for pathological section, and observe the hepatic morphological patterns under light microscope; obtain and fix the hepatic tissue after injecting perfusate into the body, and observe the changes of fenestrated LSEC under scanning electron microscope; observe the ultrastructure of liver cells under transmission electron microscope. High-dosage alcohol extracts of S.mukorossi Gaertn can alleviate the AST, ALT, TC, TG, LDL, γ-GT, and ALP level, as well as raise the HDL and APN level in the serum of NAFLD-rat model. In addition, through the observation from light microscope and electron microscopes, the morphology of the hepatic tissue and liver cells as well as the recovery of the fenestrated LSEC in the treatment group has become normal. Alcohol extracts of S.mukorossi Gaertn can regulate the level of blood fat and improve the pathological changes of the hepatic tissues in NAFLD-rat model, which demonstrates the effects of down-regulating fat level and protecting liver. Copyright © 2014. Published by Elsevier Inc.

Strain effects on the electronic properties in δ -doped oxide superlattices

DOE PAGES

You, Jeong Ho; Lee, Jun Hee; Okamoto, Satoshi; ...

2015-02-07

We investigated strain effects on the electronic properties of (LaTiO 3) 1/(SrTiO 3)N superlattices using density functional theory. Under biaxial in-plane strain within the range of -5% ≤ ε// ≤ 5%, the d xy orbital electrons are highly localized at the interfaces whereas the d yz and d xz orbital electrons are more distributed in the SrTiO 3 (STO) spacer layers. For STO thickness N ≥ 3 unit cells (u.c.), the d xy orbital electrons form two-dimensional (2D) electron gases (2DEGs). The quantized energy levels of the 2DEG are insensitive to the STO spacer thickness, but are strongly dependent onmore » the applied biaxial in-plane strain. As the in-plane strain changes from compressive to tensile, the quantized energy levels of the dxy orbitals decrease thereby creating more states with 2D character. In contrast to the d xy orbital, the d yz and dxz orbitals always have three-dimensional (3D) transport characteristics and their energy levels increase as the strain changes from compressive to tensile. In conclusion, since the charge densities in the d xy orbital and the d yz and d xz orbitals respond to biaxial in-plane strain in an opposite way, the transport dimensionality of the majority carriers can be controlled between 2D and 3D by applying biaxial in-plane strain.« less

The High Energy Telescopes for the STEREO Mission

NASA Astrophysics Data System (ADS)

von Rosenvinge, T.; Cummings, A.; Cohen, C.; Leske, R.; Mewaldt, R.; Stone, E.; Wiedenbeck, M.

2007-05-01

The High Energy Telescopes (HETs) described in this paper are part of the IMPACT investigation for the STEREO mission (Principal Investigator: Janet Luhmann, University of California at Berkeley). The two STEREO spacecraft were launched from Cape Canaveral, FL on October 25, 2006. High energy electrons (~ 0.7 -6 MeV) and nuclei from hydrogen to iron (~ 13 - 200 MeV/nucleon) are detected by the HETs, one on each spacecraft. The HET design, the associated electronics, and the on-board software are described in some detail. Observations from one pass through the Earth's magnetosphere and from four X-class solar events in December, 2006 are presented to illustrate the capabilities of the HETs. The event of December 13th was a Ground Level Event. We will compare the elemental composition of this event with that of a previous Ground Level Event on January 20, 2005. This work was supported by NASA (at Caltech and JPL under contract NAS5-00133).

Ultrahigh-efficiency solution-processed simplified small-molecule organic light-emitting diodes using universal host materials

PubMed Central

Han, Tae-Hee; Choi, Mi-Ri; Jeon, Chan-Woo; Kim, Yun-Hi; Kwon, Soon-Ki; Lee, Tae-Woo

2016-01-01

Although solution processing of small-molecule organic light-emitting diodes (OLEDs) has been considered as a promising alternative to standard vacuum deposition requiring high material and processing cost, the devices have suffered from low luminous efficiency and difficulty of multilayer solution processing. Therefore, high efficiency should be achieved in simple-structured small-molecule OLEDs fabricated using a solution process. We report very efficient solution-processed simple-structured small-molecule OLEDs that use novel universal electron-transporting host materials based on tetraphenylsilane with pyridine moieties. These materials have wide band gaps, high triplet energy levels, and good solution processabilities; they provide balanced charge transport in a mixed-host emitting layer. Orange-red (~97.5 cd/A, ~35.5% photons per electron), green (~101.5 cd/A, ~29.0% photons per electron), and white (~74.2 cd/A, ~28.5% photons per electron) phosphorescent OLEDs exhibited the highest recorded electroluminescent efficiencies of solution-processed OLEDs reported to date. We also demonstrate a solution-processed flexible solid-state lighting device as a potential application of our devices. PMID:27819053

Universal electronics for miniature and automated chemical assays.

PubMed

Urban, Pawel L

2015-02-21

This minireview discusses universal electronic modules (generic programmable units) and their use by analytical chemists to construct inexpensive, miniature or automated devices. Recently, open-source platforms have gained considerable popularity among tech-savvy chemists because their implementation often does not require expert knowledge and investment of funds. Thus, chemistry students and researchers can easily start implementing them after a few hours of reading tutorials and trial-and-error. Single-board microcontrollers and micro-computers such as Arduino, Teensy, Raspberry Pi or BeagleBone enable collecting experimental data with high precision as well as efficient control of electric potentials and actuation of mechanical systems. They are readily programmed using high-level languages, such as C, C++, JavaScript or Python. They can also be coupled with mobile consumer electronics, including smartphones as well as teleinformatic networks. More demanding analytical tasks require fast signal processing. Field-programmable gate arrays enable efficient and inexpensive prototyping of high-performance analytical platforms, thus becoming increasingly popular among analytical chemists. This minireview discusses the advantages and drawbacks of universal electronic modules, considering their application in prototyping and manufacture of intelligent analytical instrumentation.

P-doping-free III-nitride high electron mobility light-emitting diodes and transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Baikui; Tang, Xi; Chen, Kevin J., E-mail: eekjchen@ust.hk

2014-07-21

We report that a simple metal-AlGaN/GaN Schottky diode is capable of producing GaN band-edge ultraviolet emission at 3.4 eV at a small forward bias larger than ∼2 V at room temperature. Based on the surface states distribution of AlGaN, a mature impact-ionization-induced Fermi-level de-pinning model is proposed to explain the underlying mechanism of the electroluminescence (EL) process. By experimenting with different Schottky metals, Ni/Au and Pt/Au, we demonstrated that this EL phenomenon is a “universal” property of metal-AlGaN/GaN Schottky diodes. Since this light-emitting Schottky diode shares the same active structure and fabrication processes as the AlGaN/GaN high electron mobility transistors, straight-forward andmore » seamless integration of photonic and electronic functional devices has been demonstrated on doping-free III-nitride heterostructures. Using a semitransparent Schottky drain electrode, an AlGaN/GaN high electron mobility light-emitting transistor is demonstrated.« less

Associative electron detachment - O(-) + H yields OH + e(-)

NASA Astrophysics Data System (ADS)

Acharya, P. K.; Kendall, R. A.; Simons, J.

1985-10-01

Diatomic associative electron detachment (AED) involves the ejection of an electron when a atomic anion and another atom collisionally associate to produce a neutral diatomic molecule in a vibration-rotation state labeled V-prime, J-prime. Electron ejection rate calculations are discussed, taking into account aspects of rate expressions, calculations of ingredients in rate expression, initial-condition weighting factors, and the vibration and rotation dependence of ejection rates. The results of ab initio theoretical simulations indicate that AED in O(-) + H is so slow (approximately 10,000 per s) that it is likely to be inaccessible to present experimental observation. Propensity for producing OH in high vibrational levels does occur but the propensity is not sharp.

Low-energy electron point projection microscopy/diffraction study of suspended graphene

NASA Astrophysics Data System (ADS)

Hsu, Wei-Hao; Chang, Wei-Tse; Lin, Chun-Yueh; Chang, Mu-Tung; Hsieh, Chia-Tso; Wang, Chang-Ran; Lee, Wei-Li; Hwang, Ing-Shouh

2017-11-01

In this work, we present our study of suspended graphene with low-energy electrons based on a point projection microscopic/diffractive imaging technique. Both exfoliated and chemical vapor deposition (CVD) graphene samples were studied in an ultra-high vacuum chamber. This method allows imaging of individual adsorbates at the nanometer scale and characterizing graphene layers, graphene lattice orientations, ripples on graphene membranes, etc. We found that long-duration exposure to low-energy electron beams induced aggregation of adsorbates on graphene when the electron dose rate was above a certain level. We also discuss the potential of this technique to conduct coherent diffractive imaging for determining the atomic structures of biological molecules adsorbed on suspended graphene.

The exact tree-level calculation of the dark photon production in high-energy electron scattering at the CERN SPS

NASA Astrophysics Data System (ADS)

Gninenko, S. N.; Kirpichnikov, D. V.; Kirsanov, M. M.; Krasnikov, N. V.

2018-07-01

Dark photon (A‧) that couples to the standard model fermions via the kinetic mixing with photons and serves as a mediator of dark matter production could be observed in the high-energy electron scattering e- + Z →e- + Z +A‧ off nuclei followed by the bremsstrahlung A‧ → invisible decay. We cross check the exact tree-level calculations of the A‧ production cross sections by other results and implement them in the program for the full simulation of such events in the experiment NA64 at the CERN SPS . Using simulations results, we study the missing energy signature for the A‧ → invisible decay that allows to probe the γ -A‧ mixing strength in a wide, from sub-MeV to sub-GeV, A‧ mass range. We refine and expand our earlier studies of this signature by including corrections to the previously used calculations based on the improved Weizsaker-Williams (IWW) approximation, which turn out to be significant. We find that the commonly used IWW approach can lead to substantial overestimation of the sensitivity to A‧ in fixed target experiments. The possibility of future searches with high-energy electron beams and their sensitivity to A‧ are briefly discussed.

Microscopic signature of insulator-to-metal transition in highly doped semicrystalline conducting polymers in ionic-liquid-gated transistors

NASA Astrophysics Data System (ADS)

Tanaka, Hisaaki; Nishio, Satoshi; Ito, Hiroshi; Kuroda, Shin-ichi

2015-12-01

Electronic state of charge carriers, in particular, in highly doped regions, in thin-film transistors of a semicrystalline conducting polymer poly(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene), has been studied by using field-induced electron spin resonance (ESR) spectroscopy. By adopting an ionic-liquid gate insulator, a gate-controlled reversible electrochemical hole-doping of the polymer backbone is achieved, as confirmed from the change of the optical absorption spectra. The edge-on molecular orientation in the pristine film is maintained even after the electrochemical doping, which is clarified from the angular dependence of the g value. As the doping level increases, spin 1/2 polarons transform into spinless bipolarons, which is demonstrated from the spin-charge relation showing a spin concentration peak around 1%, contrasting to the monotonic increase in the charge concentration. At high doping levels, a drastic change in the linewidth anisotropy due to the generation of conduction electrons is observed, indicating the onset of metallic state, which is also supported by the temperature dependence of the spin susceptibility and the ESR linewidth. Our results suggest that semicrystalline conducting polymers become metallic with retaining their molecular orientational order, when appropriate doping methods are chosen.

Enabling Professionalism: The Master Technician Program.

ERIC Educational Resources Information Center

Wimmer, Doris K.

1988-01-01

Describes Virginia's Master Technician Program, which offers a comprehensive coordinated curriculum in electronics/electromechanical technology that spans high school and community college levels of instruction. Highlights innovations of the project, curriculum design, advantages, and future projections. (DMM)

A hidden pseudogap under the 'dome' of superconductivity in electron-doped high-temperature superconductors.

PubMed

Alff, L; Krockenberger, Y; Welter, B; Schonecke, M; Gross, R; Manske, D; Naito, M

2003-04-17

The ground state of superconductors is characterized by the long-range order of condensed Cooper pairs: this is the only order present in conventional superconductors. The high-transition-temperature (high-T(c)) superconductors, in contrast, exhibit more complex phase behaviour, which might indicate the presence of other competing ground states. For example, the pseudogap--a suppression of the accessible electronic states at the Fermi level in the normal state of high-T(c) superconductors-has been interpreted as either a precursor to superconductivity or as tracer of a nearby ground state that can be separated from the superconducting state by a quantum critical point. Here we report the existence of a second order parameter hidden within the superconducting phase of the underdoped (electron-doped) high-T(c) superconductor Pr2-xCe(x)CuO4-y and the newly synthesized electron-doped material La2-xCe(x)CuO4-y (ref. 8). The existence of a pseudogap when superconductivity is suppressed excludes precursor superconductivity as its origin. Our observation is consistent with the presence of a (quantum) phase transition at T = 0, which may be a key to understanding high-T(c) superconductivity. This supports the picture that the physics of high-T(c) superconductors is determined by the interplay between competing and coexisting ground states.

Possibility for ultra-bright electron beam acceleration in dielectric wakefield accelerators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simakov, Evgenya I.; Carlsten, Bruce E.; Shchegolkov, Dmitry Yu.

2012-12-21

We describe a conceptual proposal to combine the Dielectric Wakefield Accelerator (DWA) with the Emittance Exchanger (EEX) to demonstrate a high-brightness DWA with a gradient of above 100 MV/m and less than 0.1% induced energy spread in the accelerated beam. We currently evaluate the DWA concept as a performance upgrade for the future LANL signature facility MaRIE with the goal of significantly reducing the electron beam energy spread. The preconceptual design for MaRIE is underway at LANL, with the design of the electron linear accelerator being one of the main research goals. Although generally the baseline design needs to bemore » conservative and rely on existing technology, any future upgrade would immediately call for looking into the advanced accelerator concepts capable of boosting the electron beam energy up by a few GeV in a very short distance without degrading the beam's quality. Scoping studies have identified large induced energy spreads as the major cause of beam quality degradation in high-gradient advanced accelerators for free-electron lasers. We describe simulations demonstrating that trapezoidal bunch shapes can be used in a DWA to greatly reduce the induced beam energy spread, and, in doing so, also preserve the beam brightness at levels never previously achieved. This concept has the potential to advance DWA technology to a level that would make it suitable for the upgrades of the proposed Los Alamos MaRIE signature facility.« less

Ground and excited state properties of high performance anthocyanidin dyes-sensitized solar cells in the basic solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prima, Eka Cahya; Computational Material Design and Quantum Engineering Laboratory, Engineering Physics, Institut Teknologi Bandung; International Program on Science Education, Universitas Pendidikan Indonesia

2015-09-30

The aglycones of anthocyanidin dyes were previously reported to form carbinol pseudobase, cis-chalcone, and trans-chalcone due to the basic levels. The further investigations of ground and excited state properties of the dyes were characterized using density functional theory with PCM(UFF)/B3LYP/6-31+G(d,p) level in the basic solutions. However, to the best of our knowledge, the theoretical investigation of their potential photosensitizers has never been reported before. In this paper, the theoretical photovoltaic properties sensitized by dyes have been successfully investigated including the electron injections, the ground and excited state oxidation potentials, the estimated open circuit voltages, and the light harvesting efficiencies. Themore » results prove that the electronic properties represented by dyes’ LUMO-HOMO levels will affect to the photovoltaic performances. Cis-chalcone dye is the best anthocyanidin aglycone dye with the electron injection spontaneity of −1.208 eV, the theoretical open circuit voltage of 1.781 V, and light harvesting efficiency of 56.55% due to the best HOMO-LUMO levels. Moreover, the ethanol solvent slightly contributes to the better cell performance than the water solvent dye because of the better oxidation potential stabilization in the ground state as well as in the excited state. These results are in good agreement with the known experimental report that the aglycones of anthocyanidin dyes in basic solvent are the high potential photosensitizers for dye-sensitized solar cell.« less

Two types of fundamental luminescence of ionization-passive electrons and holes in optical dielectrics—Intraband-electron and interband-hole luminescence (theoretical calculation and comparison with experiment)

NASA Astrophysics Data System (ADS)

Vaisburd, D. I.; Kharitonova, S. V.

1997-11-01

A short high-power pulse of ionizing radiation creates a high concentration of nonequilibrium electrons and holes in a dielectric. They quickly lose their energy, generating a multiplicity of secondary quasiparticles: electron—hole pairs, excitons, plasmons, phonons of all types, and others. When the kinetic energy of an electron becomes less that some value EΔ≈(1.3-2)Eg it loses the ability to perform collisional ionization and electron excitations of the dielectric medium. Such an electron is said to be ionization-passive. It relaxes to the bottom of the lower conduction band by emitting phonons. Similarly a hole becomes ionization-passive when it “floats up” above some level EH and loses the ability for Auger ionization of the dielectric medium. It continues to float upward to the ceiling of the upper valance band only by emitting phonons. The concentrations of ionization-passive electrons and holes are larger by several orders of magnitude than those of the active electrons and holes and consequently make of a far larger contribution to many kinetic processes such as luminescence. Intraband and interband quantum transitions make the greatest contribution to the fundamental (independent of impurities and intrinsic defects) electromagnetic radiation of ionization-passive electrons and holes. Consequently the brightest types of purely fundamental luminescence of strongly nonequilibrium electrons and holes are intraband and interband luminescence. These forms of luminescence, discovered relatively recently, carry valuable information on the high-energy states of the electrons in the conduction band and of the holes in the valence band of a dielectric. Experimental investigations of these types of luminescence were made, mainly on alkali halide crystals which were excited by nanoseconal pulses of high-current-density electrons and by two-photon absorption of the ultraviolet harmonics of pulsed laser radiation beams of nanosecond and picosecond duration. The present article gives the results of theoretical calculations of the spectra and other characteristics of intraband electron and interband hole luminescence which are compared with the experimental data.

LabLessons: Effects of Electronic Prelabs on Student Engagement and Performance

ERIC Educational Resources Information Center

Gryczka, Patrick; Klementowicz, Edward; Sharrock, Chappel; Maxfield, MacRae; Montclare, Jin Kim

2016-01-01

Lab instructors, for both high school and undergraduate college level courses, face issues of constricted time within the lab period and limited student engagement with prelab materials. To address these issues, an online prelab delivery system named LabLessons is developed and tested out in a high school chemistry classroom. The system…

High-level neutron coincidence counter maintenance manual

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swansen, J.; Collinsworth, P.

1983-05-01

High-level neutron coincidence counter operational (field) calibration and usage is well known. This manual makes explicit basic (shop) check-out, calibration, and testing of new units and is a guide for repair of failed in-service units. Operational criteria for the major electronic functions are detailed, as are adjustments and calibration procedures, and recurrent mechanical/electromechanical problems are addressed. Some system tests are included for quality assurance. Data on nonstandard large-scale integrated (circuit) components and a schematic set are also included.

Experimental demonstration of high efficiency electron cyclotron autoresonance acceleration

DOE Office of Scientific and Technical Information (OSTI.GOV)

LaPointe, M.A.; Yoder, R.B.; Wang, C.

1996-04-01

First experimental results are reported on the operation of a multimegawatt 2.856 GHz cyclotron autoresonance accelerator (CARA). A 90{endash}100 kV, 2{endash}3 MW linear electron beam has had up to6.6 MW added to it in CARA, with an rf-to-beam power efficiency of up to 96{percent}. This efficiency level is larger than that reported for any fast-wave interaction between radiation and electrons, and also larger than that in normal conducting rf linear accelerators. The results obtained are in good agreement with theoretical predictions. {copyright} {ital 1996 The American Physical Society.}

Single-electron population and depopulation of an isolated quantum dot using a surface-acoustic-wave pulse.

PubMed

Kataoka, M; Schneble, R J; Thorn, A L; Barnes, C H W; Ford, C J B; Anderson, D; Jones, G A C; Farrer, I; Ritchie, D A; Pepper, M

2007-01-26

We use a pulse of surface acoustic waves (SAWs) to control the electron population and depopulation of a quantum dot. The barriers between the dot and reservoirs are set high to isolate the dot. Within a time scale of approximately 100 s the dot can be set to a nonequilibrium charge state, where an empty (occupied) level stays below (above) the Fermi energy. A pulse containing a fixed number of SAW periods is sent through the dot, controllably changing the potential, and hence the tunneling probability, to add (remove) an electron to (from) the dot.

Automotive sensors: past, present and future

NASA Astrophysics Data System (ADS)

Prosser, S. J.

2007-07-01

This paper will provide a review of past, present and future automotive sensors. Today's vehicles have become highly complex sophisticated electronic control systems and the majority of innovations have been solely achieved through electronics and the use of advanced sensors. A range of technologies have been used over the past twenty years including silicon microengineering, thick film, capacitive, variable reluctance, optical and radar. The automotive sensor market continues to grow with respect to vehicle production level in recognition of the transition to electronically controlled electrically actuated systems. The environment for these sensors continues to be increasingly challenging with respect to robustness, reliability, quality and cost.

Advanced educational program in optoelectronics for undergraduates and graduates in electronics

NASA Astrophysics Data System (ADS)

Vladescu, Marian; Schiopu, Paul

2015-02-01

The optoelectronics education included in electronics curricula at Faculty of Electronics, Telecommunications and Information Technology of "Politehnica" University of Bucharest started in early '90s, and evolved constantly since then, trying to address the growing demand of engineers with a complex optoelectronics profile and to meet the increased requirements of microelectronics, optoelectronics, and lately nanotechnologies. Our goal is to provide a high level of theoretical background combined with advanced experimental tools in laboratories, and also with simulation platforms. That's why we propose an advanced educational program in optoelectronics for both grades of our study program, bachelor and master.

Metal-to-insulator crossover in alkali doped zeolite

PubMed Central

Igarashi, Mutsuo; Jeglič, Peter; Krajnc, Andraž; Žitko, Rok; Nakano, Takehito; Nozue, Yasuo; Arčon, Denis

2016-01-01

We report a systematic nuclear magnetic resonance investigation of the 23Na spin-lattice relaxation rate, 1/T1, in sodium loaded low-silica X (LSX) zeolite, Nan/Na12-LSX, for various loading levels of sodium atoms n across the metal-to-insulator crossover. For high loading levels of n ≥ 14.2, 1/T1T shows nearly temperature-independent behaviour between 10 K and 25 K consistent with the Korringa relaxation mechanism and the metallic ground state. As the loading levels decrease below n ≤ 11.6, the extracted density of states (DOS) at the Fermi level sharply decreases, although a residual DOS at Fermi level is still observed even in the samples that lack the metallic Drude-peak in the optical reflectance. The observed crossover is a result of a complex loading-level dependence of electric potential felt by the electrons confined to zeolite cages, where the electronic correlations and disorder both play an important role. PMID:26725368

Sampling and position effects in the Electronically Steered Thinned Array Radiometer (ESTAR)

NASA Technical Reports Server (NTRS)

Katzberg, Stephen J.

1993-01-01

A simple engineering level model of the Electronically Steered Thinned Array Radiometer (ESTAR) is developed that allows an identification of the major effects of the sampling process involved with this technique. It is shown that the ESTAR approach is sensitive to aliasing and has a highly non-uniform sensitivity profile. It is further shown that the ESTAR approach is strongly sensitive to position displacements of the low-density sampling antenna elements.

An open-source framework for analyzing N-electron dynamics. II. Hybrid density functional theory/configuration interaction methodology.

PubMed

Hermann, Gunter; Pohl, Vincent; Tremblay, Jean Christophe

2017-10-30

In this contribution, we extend our framework for analyzing and visualizing correlated many-electron dynamics to non-variational, highly scalable electronic structure method. Specifically, an explicitly time-dependent electronic wave packet is written as a linear combination of N-electron wave functions at the configuration interaction singles (CIS) level, which are obtained from a reference time-dependent density functional theory (TDDFT) calculation. The procedure is implemented in the open-source Python program detCI@ORBKIT, which extends the capabilities of our recently published post-processing toolbox (Hermann et al., J. Comput. Chem. 2016, 37, 1511). From the output of standard quantum chemistry packages using atom-centered Gaussian-type basis functions, the framework exploits the multideterminental structure of the hybrid TDDFT/CIS wave packet to compute fundamental one-electron quantities such as difference electronic densities, transient electronic flux densities, and transition dipole moments. The hybrid scheme is benchmarked against wave function data for the laser-driven state selective excitation in LiH. It is shown that all features of the electron dynamics are in good quantitative agreement with the higher-level method provided a judicious choice of functional is made. Broadband excitation of a medium-sized organic chromophore further demonstrates the scalability of the method. In addition, the time-dependent flux densities unravel the mechanistic details of the simulated charge migration process at a glance. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Excited-state relaxation in PbSe quantum dots

NASA Astrophysics Data System (ADS)

An, Joonhee M.; Califano, Marco; Franceschetti, Alberto; Zunger, Alex

2008-04-01

In solids the phonon-assisted, nonradiative decay from high-energy electronic excited states to low-energy electronic excited states is picosecond fast. It was hoped that electron and hole relaxation could be slowed down in quantum dots, due to the unavailability of phonons energy matched to the large energy-level spacings ("phonon-bottleneck"). However, excited-state relaxation was observed to be rather fast (⩽1ps) in InP, CdSe, and ZnO dots, and explained by an efficient Auger mechanism, whereby the excess energy of electrons is nonradiatively transferred to holes, which can then rapidly decay by phonon emission, by virtue of the densely spaced valence-band levels. The recent emergence of PbSe as a novel quantum-dot material has rekindled the hope for a slow down of excited-state relaxation because hole relaxation was deemed to be ineffective on account of the widely spaced hole levels. The assumption of sparse hole energy levels in PbSe was based on an effective-mass argument based on the light effective mass of the hole. Surprisingly, fast intraband relaxation times of 1-7ps were observed in PbSe quantum dots and have been considered contradictory with the Auger cooling mechanism because of the assumed sparsity of the hole energy levels. Our pseudopotential calculations, however, do not support the scenario of sparse hole levels in PbSe: Because of the existence of three valence-band maxima in the bulk PbSe band structure, hole energy levels are densely spaced, in contradiction with simple effective-mass models. The remaining question is whether the Auger decay channel is sufficiently fast to account for the fast intraband relaxation. Using the atomistic pseudopotential wave functions of Pb2046Se2117 and Pb260Se249 quantum dots, we explicitly calculated the electron-hole Coulomb integrals and the P →S electron Auger relaxation rate. We find that the Auger mechanism can explain the experimentally observed P →S intraband decay time scale without the need to invoke any exotic relaxation mechanisms.

Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires

NASA Astrophysics Data System (ADS)

Zhao, S.; Mi, Z.; Kibria, M. G.; Li, Q.; Wang, G. T.

2012-06-01

In the present work, the photoluminescence (PL) characteristics of intrinsic and Si-doped InN nanowires are studied in detail. For intrinsic InN nanowires, the emission is due to band-to-band carrier recombination with the peak energy at ˜0.64 eV (at 300 K) and may involve free-exciton emission at low temperatures. The PL spectra exhibit a strong dependence on optical excitation power and temperature, which can be well characterized by the presence of very low residual electron density and the absence or a negligible level of surface electron accumulation. In comparison, the emission of Si-doped InN nanowires is characterized by the presence of two distinct peaks located at ˜0.65 and ˜0.73-0.75 eV (at 300 K). Detailed studies further suggest that these low-energy and high-energy peaks can be ascribed to band-to-band carrier recombination in the relatively low-doped nanowire bulk region and Mahan exciton emission in the high-doped nanowire near-surface region, respectively; this is a natural consequence of dopant surface segregation. The resulting surface electron accumulation and Fermi-level pinning, due to the enhanced surface doping, are confirmed by angle-resolved x-ray photoelectron spectroscopy measurements on Si-doped InN nanowires, which is in direct contrast to the absence or a negligible level of surface electron accumulation in intrinsic InN nanowires. This work elucidates the role of charge-carrier concentration and distribution on the optical properties of InN nanowires.

Modeling and Numerical Simulation of Microwave Pulse Propagation in Air Breakdown Environment

NASA Technical Reports Server (NTRS)

Kuo, S. P.; Kim, J.

1991-01-01

Numerical simulation is used to investigate the extent of the electron density at a distant altitude location which can be generated by a high-power ground-transmitted microwave pulse. This is done by varying the power, width, shape, and carrier frequency of the pulse. The results show that once the breakdown threshold field is exceeded in the region below the desired altitude location, electron density starts to build up in that region through cascading breakdown. The generated plasma attenuates the pulse energy (tail erosion) and thus deteriorates the energy transmission to the destined altitude. The electron density saturates at a level limited by the pulse width and the tail erosion process. As the pulse continues to travel upward, though the breakdown threshold field of the background air decreases, the pulse energy (width) is reduced more severely by the tail erosion process. Thus, the electron density grows more quickly at the higher altitude, but saturates at a lower level. Consequently, the maximum electron density produced by a single pulse at 50 km altitude, for instance, is limited to a value below 10(exp 6) cm(exp -3). Three different approaches are examined to determine if the ionization at the destined location can be improved: a repetitive pulse approach, a focused pulse approach, and two intersecting beams. Only the intersecting beam approach is found to be practical for generating the desired density level.

Characterization of Thallium Bromide (TlBr) for Room Temperature Radiation Detectors

NASA Astrophysics Data System (ADS)

Smith, Holland McTyeire

Thallium bromide (TlBr) has emerged as a remarkably well-suited material for room temperature radiation detection. The unique combination of high-Z elements, high density, suitable band gap, and excellent electrical transport properties present in TlBr have brought device performance up to par with CdZnTe (CZT), the current market-leading room temperature radiation detector material. TlBr research is at an earlier stage than that of CZT, giving hope that the material will see even further improvement in electronic properties. Improving a resistive semiconductor material requires knowledge of deep levels present in the material and the effects of these deep levels on transport properties. Very few deep level studies have been conducted on TlBr, and none with the depth required to generate useful growth suggestions. In this dissertation, deep levels in nominally undoped and doped TlBr samples are studied with electrical and optical methods. Photo-Induced Conductivity Transient Spectroscopy (PICTS) is used to discover many deep levels in TlBr electrically. These levels are compared to sub-band gap optical transitions originating from defects observed in emission spectra. The results of this research indicate that the origin of resistivity in TlBr is likely due to deep level defects pinning the Fermi level at least ˜0.7 eV from either the conduction or valence band edge. The effect of dopants and deep levels on transport in TlBr is assessed with microwave photoconductivity decay analysis. It is found that Pb-, Se-, and O-doping decreases carrier lifetime in TlBr, whereas C-doping does not. TlBr exhibits weak ionic conductivity at room temperature, which both negatively affects the leakage current of detectors and leads to device degradation over time. Researchers are actively looking for ways to reduce or eliminate the ionic conductivity, but are faced with an intriguing challenge of materials engineering: is it possible to mitigate the ionic conduction of TlBr without harming the excellent electronic transport properties? Doping TlBr in order to control the ionic conductivity has been proposed and shown to be effective in reducing dark ionic current, but the electronic effects of the dopants has not been previously studied in detail. In this dissertation, the electronic effects of dopants introduced for ionic reasons are evaluated.

Balance the Carrier Mobility To Achieve High Performance Exciplex OLED Using a Triazine-Based Acceptor.

PubMed

Hung, Wen-Yi; Chiang, Pin-Yi; Lin, Shih-Wei; Tang, Wei-Chieh; Chen, Yi-Ting; Liu, Shih-Hung; Chou, Pi-Tai; Hung, Yi-Tzu; Wong, Ken-Tsung

2016-02-01

A star-shaped 1,3,5-triazine/cyano hybrid molecule CN-T2T was designed and synthesized as a new electron acceptor for efficient exciplex-based OLED emitter by mixing with a suitable electron donor (Tris-PCz). The CN-T2T/Tris-PCz exciplex emission shows a high ΦPL of 0.53 and a small ΔET-S = -0.59 kcal/mol, affording intrinsically efficient fluorescence and highly efficient exciton up-conversion. The large energy level offsets between Tris-PCz and CN-T2T and the balanced hole and electron mobility of Tris-PCz and CN-T2T, respectively, ensuring sufficient carrier density accumulated in the interface for efficient generation of exciplex excitons. Employing a facile device structure composed as ITO/4% ReO3:Tris-PCz (60 nm)/Tris-PCz (15 nm)/Tris-PCz:CN-T2T(1:1) (25 nm)/CN-T2T (50 nm)/Liq (0.5 nm)/Al (100 nm), in which the electron-hole capture is efficient without additional carrier injection barrier from donor (or acceptor) molecule and carriers mobilities are balanced in the emitting layer, leads to a highly efficient green exciplex OLED with external quantum efficiency (EQE) of 11.9%. The obtained EQE is 18% higher than that of a comparison device using an exciplex exhibiting a comparable ΦPL (0.50), in which TCTA shows similar energy levels but higher hole mobility as compared with Tris-PCz. Our results clearly indicate the significance of mobility balance in governing the efficiency of exciplex-based OLED. Exploiting the Tris-PCz:CN-T2T exciplex as the host, we further demonstrated highly efficient yellow and red fluorescent OLEDs by doping 1 wt % Rubrene and DCJTB as emitter, achieving high EQE of 6.9 and 9.7%, respectively.

Near-infrared photoabsorption by C60 dianions in a storage ring.

PubMed

Kadhane, U; Andersen, J U; Bonderup, E; Concina, B; Hvelplund, P; Suhr Kirketerp, M-B; Liu, B; Nielsen, S Brøndsted; Panja, S; Rangama, J; Støchkel, K; Tomita, S; Zettergren, H; Hansen, K; Sundén, A E K; Canton, S E; Echt, O; Forster, J S

2009-07-07

We present a detailed study of the electronic structure and the stability of C(60) dianions in the gas phase. Monoanions were extracted from a plasma source and converted to dianions by electron transfer in a Na vapor cell. The dianions were then stored in an electrostatic ring, and their near-infrared absorption spectrum was measured by observation of laser induced electron detachment. From the time dependence of the detachment after photon absorption, we conclude that the reaction has contributions from both direct electron tunneling to the continuum and vibrationally assisted tunneling after internal conversion. This implies that the height of the Coulomb barrier confining the attached electrons is at least approximately 1.5 eV. For C(60)(2-) ions in solution electron spin resonance measurements have indicated a singlet ground state, and from the similarity of the absorption spectra we conclude that also the ground state of isolated C(60)(2-) ions is singlet. The observed spectrum corresponds to an electronic transition from a t(1u) lowest unoccupied molecular orbital (LUMO) of C(60) to the t(1g) LUMO+1 level. The electronic levels of the dianion are split due to Jahn-Teller coupling to quadrupole deformations of the molecule, and a main absorption band at 10,723 cm(-1) corresponds to a transition between the Jahn-Teller ground states. Also transitions from pseudorotational states with 200 cm(-1) and (probably) 420 cm(-1) excitation are observed. We argue that a very broad absorption band from about 11,500 cm(-1) to 13,500 cm(-1) consists of transitions to so-called cone states, which are Jahn-Teller states on a higher potential-energy surface, stabilized by a pseudorotational angular momentum barrier. A previously observed, high-lying absorption band for C(60)(-) may also be a transition to a cone state.

Generation of extremely low frequency chorus in Van Allen radiation belts: ELF CHORUS GENERATION

DOE PAGES

Xiao, Fuliang; Liu, Si; Tao, Xin; ...

2017-01-01

Recent studies have shown that chorus can efficiently accelerate the outer radiation belt electrons to relativistic energies. Chorus, previously often observed above 0.1 equatorial electron gyrofrequency f ce, was generated by energetic electrons originating from Earth's plasmasheet. Chorus below 0.1 f ce has seldom been reported until the recent data from Van Allen Probes but its origin has not been revealed so far. Because electron resonant energy can approach the relativistic level at extremely low frequency relativistic effects should be considered in the formula for whistler-mode wave growth rate. Here we report high-resolution observations during the 14 October 2014 smallmore » storm and firstly demonstrate, using a fully relativistic simulation, that electrons with the high energy tail population and relativistic pitch angle anisotropy can provide free energy sufficient for generating chorus below 0.1 f ce. The simulated wave growth displays a very similar pattern to the observations. Finally, the current results can be applied to Jupiter, Saturn and other magnetized planets.« less

Electronic structure, magnetic properties, and mechanism of the insulator-metal transition in LaCoO3 taking into account strong electron correlations

NASA Astrophysics Data System (ADS)

Ovchinnikov, S. G.; Orlov, Yu. S.; Nekrasov, I. A.; Pchelkina, Z. V.

2011-01-01

The electronic structure of LaCoO3 at finite temperatures is calculated using the LDA+GTB method taking into account strong electron correlations and possible spin crossover upon an increase in temperature. Gap states revealed in the energy spectrum of LaCoO3 reduce the dielectric gap width upon heating; this allowed us to describe the insulator-metal transition observed in this compound at T = 500-600 K. The temperature dependence of the magnetic susceptibility with a peak at T ≈ 100 K is explained by the Curie contribution from thermally excited energy levels of the Co3+ ion. At high temperatures, the Pauli contribution from a band electron is added and the total magnetization of LaCoO3 is considered as the sum M tot = M loc + M band. The second term describes the band contribution appearing as a result of the insulator-metal transition and facilitating the emergence of a high-temperature anomaly in the magnetic susceptibility of LaCoO3.

GeV Electrons due to a Transition from Laser Wakefield Acceleration to Plasma Wakefield Acceleration

NASA Astrophysics Data System (ADS)

Mo, M. Z.; Masson-Laborde, P.-E.; Ali, A.; Fourmaux, S.; Lassonde, P.; Kieffer, J.-C.; Rozmus, W.; Teychenné, D.; Fedosejevs, R.

2014-10-01

The Laser Wakefield Acceleration (LWFA) experiments performed with the 200 TW laser system located at the Canadian Advanced Laser Light Source facility at INRS, Varennes (Québec) observed at relatively high plasma densities (1 × 1019cm-3) electron bunches of GeV energy gain, more than double of the predicted energy using Lu's scaling law. This energy boost phenomena can be attributed to a transition from LWFA regime to a plasma wakefield acceleration (PWFA) regime. In the first stage, the acceleration mechanism is dominated by the bubble created by the laser in the regime of LWFA, leading to an injection of a large number of electrons. After propagation beyond the depletion length, where the laser pulse is depleted and it can no longer sustain the bubble anymore, the dense bunch of high energy electrons propagating inside the bubble will drive its own wakefield in the PWFA regime that can trap and accelerate a secondary population of electrons up to the GeV level. 3D particle-in-cell simulations support this analysis, and confirm the scenario.

Development of a SEM-based low-energy in-line electron holography microscope for individual particle imaging.

PubMed

Adaniya, Hidehito; Cheung, Martin; Cassidy, Cathal; Yamashita, Masao; Shintake, Tsumoru

2018-05-01

A new SEM-based in-line electron holography microscope has been under development. The microscope utilizes conventional SEM and BF-STEM functionality to allow for rapid searching of the specimen of interest, seamless interchange between SEM, BF-STEM and holographic imaging modes, and makes use of coherent low-energy in-line electron holography to obtain low-dose, high-contrast images of light element materials. We report here an overview of the instrumentation and first experimental results on gold nano-particles and carbon nano-fibers for system performance tests. Reconstructed images obtained from the holographic imaging mode of the new microscope show substantial image contrast and resolution compared to those acquired by SEM and BF-STEM modes, demonstrating the feasibility of high-contrast imaging via low-energy in-line electron holography. The prospect of utilizing the new microscope to image purified biological specimens at the individual particle level is discussed and electron optical issues and challenges to further improve resolution and contrast are considered. Copyright © 2018 Elsevier B.V. All rights reserved.

Enhancement of negative hydrogen ion production in an electron cyclotron resonance source

NASA Astrophysics Data System (ADS)

Dugar-Zhabon, V. D.; Murillo, M. T.; Karyaka, V. I.

2013-07-01

In this paper, we present a method for improving the negative hydrogen ion yield in the electron cyclotron resonance source with driven plasma rings where the negative ion production is realized in two stages. First, the hydrogen and deuterium molecules are excited in collisions with plasma electrons to high-laying Rydberg and high vibration levels in the plasma volume. The second stage leads to negative ion production through the process of repulsive attachment of low-energy electrons by the excited molecules. The low-energy electrons originate due to a bombardment of the plasma electrode surface by ions of a driven ring and the thermoelectrons produced by a rare earth ceramic electrode, which is appropriately installed in the source chamber. The experimental and calculation data on the negative hydrogen ion generation rate demonstrate that very low-energy thermoelectrons significantly enhance the negative-ion generation rate that occurs in the layer adjacent to the plasma electrode surface. It is found that heating of the tungsten filaments placed in the source chamber improves the discharge stability and extends the pressure operation range.

Measuring Conformational Dynamics of Single Biomolecules Using Nanoscale Electronic Devices

NASA Astrophysics Data System (ADS)

Akhterov, Maxim V.; Choi, Yongki; Sims, Patrick C.; Olsen, Tivoli J.; Gul, O. Tolga; Corso, Brad L.; Weiss, Gregory A.; Collins, Philip G.

2014-03-01

Molecular motion can be a rate-limiting step of enzyme catalysis, but motions are typically too quick to resolve with fluorescent single molecule techniques. Recently, we demonstrated a label-free technique that replaced fluorophores with nano-electronic circuits to monitor protein motions. The solid-state electronic technique used single-walled carbon nanotube (SWNT) transistors to monitor conformational motions of a single molecule of T4 lysozyme while processing its substrate, peptidoglycan. As lysozyme catalyzes the hydrolysis of glycosidic bonds, two protein domains undergo 8 Å hinge bending motion that generates an electronic signal in the SWNT transistor. We describe improvements to the system that have extended our temporal resolution to 2 μs . Electronic recordings at this level of detail directly resolve not just transitions between open and closed conformations but also the durations for those transition events. Statistical analysis of many events determines transition timescales characteristic of enzyme activity and shows a high degree of variability within nominally identical chemical events. The high resolution technique can be readily applied to other complex biomolecules to gain insights into their kinetic parameters and catalytic function.

Comparative study of nonideal beam effects in high gain harmonic generation and self-seeded free electron lasers

NASA Astrophysics Data System (ADS)

Marinelli, Agostino; Pellegrini, Claudio; Giannessi, Luca; Reiche, Sven

2010-07-01

In this paper we investigate and compare the properties of two narrow-bandwidth free-electron laser (FEL) schemes, one using self-seeding and the other high gain harmonic generation (HGHG). The two systems have been thoroughly studied analytically and numerically in the past. The aim of this work is to compare their performances when the FEL is driven by an electron beam with nonideal properties, thus including effects such as shot-to-shot energy fluctuations and nonlinear energy chirp. In both cases nonlinearities produce a bandwidth larger than the Fourier transform limited value. However, our analysis indicates that, for approximately the same output power levels, the self-seeding scheme is less affected than the HGHG scheme by quadratic energy chirps in the electron beam longitudinal phase space. This is confirmed by a specific numerical example corresponding to SPARX parameters where the electron beam was optimized to minimize the FEL gain length. The work has been carried out with the aid of the time dependent FEL codes GENESIS 1.3 (3D) and PERSEO (1D).

Mach number dependence of electron heating at high Mach number interplanetary shocks in the inner heliospere

NASA Astrophysics Data System (ADS)

Matsukiyo, Shuichi

In the inner heliosphere a variety of interplanetary shocks with different Mach numbers are expected to be present. A possible maximum Mach number at 0.3AU from the sun is esti-mated to be about 40. Efficiency of electron heating in such high Mach number shocks is one of the outstanding issues of space plasma physics as well as astrophysics. Here, from this aspect, electron heating rate through microinstabilities generated in the transition region of a quasi-perpendicular shock for wide range of Mach numbers is investigated. Saturation levels of effective electron temperature as a result of modified two-stream instability (MTSI) are es-timated by using a semianalytic approach which we call an extended quasilinear analysis here. The results are compared with one-dimensional full particle-in-cell simulations. It is revealed that Mach number dependence of the effective electron temperature is weak when a Mach num-ber is below a certain critical value. Above the critical value, electron temperature increases being proportional to an upstream flow energy because of that a dominant microinstability in the foot changes from the MTSI to Buneman instability. The critical Mach number is roughly estimated to be a few tens.

The fine structure of electron irradiation induced EL2-like defects in n-GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tunhuma, S. M.; Auret, F. D.; Legodi, M. J.

2016-04-14

Defects induced by electron irradiation in n-GaAs have been studied using deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS). The E{sub 0.83} (EL2) is the only defect observed prior to irradiation. Ru/n-GaAs Schottky diodes were irradiated with high energy electrons from a Sr-90 radionuclide up to a fluence of 2.45 × 10{sup 13} cm{sup −2}. The prominent electron irradiation induced defects, E{sub 0.04}, E{sub 0.14}, E{sub 0.38}, and E{sub 0.63}, were observed together with the metastable E{sub 0.17}. Using L-DLTS, we observed the fine structure of a broad base EL2-like defect peak. This was found to be made up of the E{submore » 0.75}, E{sub 0.83}, and E{sub 0.85} defects. Our study reveals that high energy electron irradiation increases the concentration of the E{sub 0.83} defect and introduces a family of defects with electronic properties similar to those of the EL2.« less

A high resolution study of the glycocalyx of rat uterine epithelial cells during early pregnancy with the field emission gun scanning electron microscope.

PubMed Central

Jones, B J; Murphy, C R

1994-01-01

The field emission gun scanning electron microscope has been used to investigate morphological changes at the macromolecular level in the glycocalyx of rat uterine luminal epithelial cells during early pregnancy. This very high resolution microscope has allowed visualisation at a level previously unobtainable and has enabled us to establish that dramatic alterations occur in this glycocalyx at the time of blastocyst attachment. On d 1 of pregnancy a prominent, filamentous glycocalyx radiates from the microvilli. However, by d 6 of pregnancy when the microvilli have been replaced by irregular cell surface protrusions, the glycocalyceal filaments are completely lost and the plasma membrane appears smooth and covered with a felt-like coating. These morphological observations suggest a major reorganisation in surface carbohydrates during early pregnancy and extend histochemical observations on the uterine epithelial glycocalyx. Images Fig. 1 Fig. 2 Figs. 3 and 4 PMID:7961152

Exfoliation of graphene sheets via high energy wet milling of graphite in 2-ethylhexanol and kerosene.

PubMed

Al-Sherbini, Al-Sayed; Bakr, Mona; Ghoneim, Iman; Saad, Mohamed

2017-05-01

Graphene sheets have been exfoliated from bulk graphite using high energy wet milling in two different solvents that were 2-ethylhexanol and kerosene. The milling process was performed for 60 h using a planetary ball mill. Morphological characteristics were investigated using scanning electron microscope (SEM) and transmission electron microscope (TEM). On the other hand, the structural characterization was performed using X-ray diffraction technique (XRD) and Raman spectrometry. The exfoliated graphene sheets have represented good morphological and structural characteristics with a valuable amount of defects and a good graphitic structure. The graphene sheets exfoliated in the presence of 2-ethylhexanol have represented many layers, large crystal size and low level of defects, while the graphene sheets exfoliated in the presence of kerosene have represented fewer number of layers, smaller crystal size and higher level of defects.

A novel conductivity mechanism of highly disordered carbon systems based on an investigation of graph zeta function

NASA Astrophysics Data System (ADS)

Matsutani, Shigeki; Sato, Iwao

2017-09-01

In the previous report (Matsutani and Suzuki, 2000 [21]), by proposing the mechanism under which electric conductivity is caused by the activational hopping conduction with the Wigner surmise of the level statistics, the temperature-dependent of electronic conductivity of a highly disordered carbon system was evaluated including apparent metal-insulator transition. Since the system consists of small pieces of graphite, it was assumed that the reason why the level statistics appears is due to the behavior of the quantum chaos in each granular graphite. In this article, we revise the assumption and show another origin of the Wigner surmise, which is more natural for the carbon system based on a recent investigation of graph zeta function in graph theory. Our method can be applied to the statistical treatment of the electronic properties of the randomized molecular system in general.

Delayed electron emission in strong-field driven tunnelling from a metallic nanotip in the multi-electron regime

PubMed Central

Yanagisawa, Hirofumi; Schnepp, Sascha; Hafner, Christian; Hengsberger, Matthias; Kim, Dong Eon; Kling, Matthias F.; Landsman, Alexandra; Gallmann, Lukas; Osterwalder, Jürg

2016-01-01

Illuminating a nano-sized metallic tip with ultrashort laser pulses leads to the emission of electrons due to multiphoton excitations. As optical fields become stronger, tunnelling emission directly from the Fermi level becomes prevalent. This can generate coherent electron waves in vacuum leading to a variety of attosecond phenomena. Working at high emission currents where multi-electron effects are significant, we were able to characterize the transition from one regime to the other. Specifically, we found that the onset of laser-driven tunnelling emission is heralded by the appearance of a peculiar delayed emission channel. In this channel, the electrons emitted via laser-driven tunnelling emission are driven back into the metal, and some of the electrons reappear in the vacuum with some delay time after undergoing inelastic scattering and cascading processes inside the metal. Our understanding of these processes gives insights on attosecond tunnelling emission from solids and should prove useful in designing new types of pulsed electron sources. PMID:27786287

Prevalence of headache in adolescents and association with use of computer and videogames.

PubMed

Xavier, Michelle Katherine Andrade; Pitangui, Ana Carolina Rodarti; Silva, Georgia Rodrigues Reis; Oliveira, Valéria Mayaly Alves de; Beltrão, Natália Barros; Araújo, Rodrigo Cappato de

2015-11-01

The aim of this study was to determine the prevalence of headache in adolescents and its association with excessive use of electronic devices and games. The sample comprised 954 adolescents of both sexes (14 to 19 years) who answered a questionnaire about use of computers and electronic games, presence of headache and physical activity. The binary and multinomial logistic regression, with significance level of 5% was used for inferential analysis. The prevalence of headache was 80.6%. The excessive use of electronics devices proved to be a risk factor (OR = 1.21) for headache. Subjects aged between 14 and 16 years were less likely to report headache (OR = 0.64). Regarding classification, 17.9% of adolescents had tension-type headache, 19.3% had migraine and 43.4% other types of headache. The adolescents aged form 14 to 16 years had lower chance (OR ≤ 0.68) to report the tension-type headache and other types of headache. The excessive use of digital equipment, electronic games and attending the third year of high school proved to be risk factors for migraine-type development (OR ≥ 1.84). There was a high prevalence of headache in adolescents and high-time use of electronic devices. We observed an association between excessive use of electronic devices and the presence of headache, and this habit is considered a risk factor, especially for the development of migraine-type.

Valence-band and core-level photoemission study of single-crystal Bi2CaSr2Cu2O8 superconductors

NASA Astrophysics Data System (ADS)

Shen, Z.-X.; Lindberg, P. A. P.; Wells, B. O.; Mitzi, D. B.; Lindau, I.; Spicer, W. E.; Kapitulnik, A.

1988-12-01

High-quality single crystals of Bi2CaSr2Cu2O8 superconductors have been prepared and cleaved in ultrahigh vacuum. Low-energy electron diffraction measurements show that the surface structure is consistent with the bulk crystal structure. Ultraviolet photoemission and x-ray photoemission experiments were performed on these well-characterized sample surfaces. The valence-band and the core-level spectra obtained from the single-crystal surfaces are in agreement with spectra recorded from polycrystalline samples, justifying earlier results from polycrystalline samples. Cu satellites are observed both in the valence band and Cu 2p core level, signaling the strong correlation among the Cu 3d electrons. The O 1s core-level data exhibit a sharp, single peak at 529-eV binding energy without any clear satellite structures.

Synergistic cross-scale coupling of turbulence in a tokamak plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Howard, N. T., E-mail: nthoward@psfc.mit.edu; Holland, C.; White, A. E.

2014-11-15

For the first time, nonlinear gyrokinetic simulations spanning both the ion and electron spatio-temporal scales have been performed with realistic electron mass ratio ((m{sub D}∕m{sub e}){sup 1∕2 }= 60.0), realistic geometry, and all experimental inputs, demonstrating the coexistence and synergy of ion (k{sub θ}ρ{sub s}∼O(1.0)) and electron-scale (k{sub θ}ρ{sub e}∼O(1.0)) turbulence in the core of a tokamak plasma. All multi-scale simulations utilized the GYRO code [J. Candy and R. E. Waltz, J. Comput. Phys. 186, 545 (2003)] to study the coupling of ion and electron-scale turbulence in the core (r/a = 0.6) of an Alcator C-Mod L-mode discharge shown previously to exhibit an under-predictionmore » of the electron heat flux when using simulations only including ion-scale turbulence. Electron-scale turbulence is found to play a dominant role in setting the electron heat flux level and radially elongated (k{sub r} ≪ k{sub θ}) “streamers” are found to coexist with ion-scale eddies in experimental plasma conditions. Inclusion of electron-scale turbulence in these simulations is found to increase both ion and electron heat flux levels by enhancing the transport at the ion-scale while also driving electron heat flux at sub-ρ{sub i} scales. The combined increases in the low and high-k driven electron heat flux may explain previously observed discrepancies between simulated and experimental electron heat fluxes and indicates a complex interaction of short and long wavelength turbulence.« less

Design, synthesis, and structure-property relationships of isoindigo-based conjugated polymers.

PubMed

Lei, Ting; Wang, Jie-Yu; Pei, Jian

2014-04-15

Conjugated polymers have developed rapidly due to their promising applications in low-cost, lightweight, and flexible electronics. The development of the third-generation donor-acceptor (D-A) polymers greatly improved the device performance in organic solar cells (OSCs) and field-effect transistors (FETs). However, for further improvement of device performance, scientists need to develop new building blocks, in particular electron-deficient aromatics, and gain an in-depth understanding of the structure-property relationships. Recently, isoindigo has been used as a new acceptor of D-A conjugated polymers. An isomer of indigo, isoindigo is a less well-known dye and can be isolated as a by-product from certain biological processes. It has two lactam rings and exhibits strong electron-withdrawing character. This electron deficiency gives isoindigo-based polymers intriguing properties, such as broad absorption and high open circuit voltage in OSCs, as well as high mobility and good ambient stability in FETs. In this Account, we review our recent progress on the design, synthesis, and structure-property relationship study of isoindigo-based polymers for FETs. Starting with some discussion on carrier transport in polymer films, we provide some basic strategies towards high-performance polymer FETs. We discuss the stability issue of devices, the impediment of the alkyl side chains, and the choice of the donor part of conjugated polymers. We demonstrate that introducing the isoindigo core effectively lowers the HOMO levels of polymers and provides FETs with long-time stability. In addition, we have found that when we use inappropriate alkyl side chains or non-centrosymmetric donors, the device performance of isoindigo polymers suffers. To further improve device performance and ambient stability, we propose several design strategies, such as using farther branched alkyl chains, modulating polymer energy levels, and extending π-conjugated backbones. We have found that using farther branched alkyl chains can effectively decrease interchain π-π stacking distance and improve carrier mobility. When we introduce electron-deficient functional groups on the isoindigo core, the LUMO levels of the polymers markedly decrease, which significantly improves the electron mobility and device stability. In addition, we present a new polymer system called BDOPV, which is based on the concept of π-extended isoindigo. By application of some strategies successfully used in isoindigo-based polymers, BDOPV-based polymers exhibit high mobility and good stability both in n-type and in ambipolar FETs. We believe that a synergy of molecular engineering strategies towards the isoindigo core, donor units, and side chains may further improve the performance and broaden the application of isoindigo-based polymers.

The main types of electron energy distribution determined by model fitting to optical emissions during HF wave ionospheric modification experiments

NASA Astrophysics Data System (ADS)

Vlasov, M. N.; Kelley, M. C.; Hysell, D. L.

2013-06-01

Enhanced optical emissions observed during HF pumping are induced by electrons accelerated by high-power electromagnetic waves. Using measured emission intensities, the energy distribution of accelerated electrons can be inferred. Energy loss from the excitation of molecular nitrogen vibrational levels (the vibrational barrier) strongly influences the electron energy distribution (EED). In airglow calculations, compensation for electron depletion within the 2-3 eV energy range, induced by the vibrational barrier, can be achieved via electrons with an EED similar to a Gaussian distribution and energies higher than 3 eV. This EED has a peak within the 5-10 eV energy range. We show that the main EED features depend strongly on altitude and solar activity. An EED similar to a power law distribution can occur above 270-300 km altitude. Below 270 km altitude, a Gaussian distribution for energies between 3 eV and 10 eV, together with a power law distribution for energies higher than 10 eV, is indicated. A Gaussian distribution combined with an exponential function is needed below 230 km altitude. The transition altitude from Gaussian to power law distribution depends strongly on solar activity, increasing for high solar activity. Electrons accelerated during the initial collisionless stage can inhibit the depletion of fast electrons within the vibrational barrier range, an effect that strongly depends on altitude and solar activity. The approach, based on the effective root square electric field, enables EED calculation, providing the observed red-line intensities for low and high solar activities.

Single-Molecule Interfacial Electron Transfer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, H. Peter

This project is focused on the use of single-molecule high spatial and temporal resolved techniques to study molecular dynamics in condensed phase and at interfaces, especially, the complex reaction dynamics associated with electron and energy transfer rate processes. The complexity and inhomogeneity of the interfacial ET dynamics often present a major challenge for a molecular level comprehension of the intrinsically complex systems, which calls for both higher spatial and temporal resolutions at ultimate single-molecule and single-particle sensitivities. Combined single-molecule spectroscopy and electrochemical atomic force microscopy approaches are unique for heterogeneous and complex interfacial electron transfer systems because the static andmore » dynamic inhomogeneities can be identified and characterized by studying one molecule at a specific nanoscale surface site at a time. The goal of our project is to integrate and apply these spectroscopic imaging and topographic scanning techniques to measure the energy flow and electron flow between molecules and substrate surfaces as a function of surface site geometry and molecular structure. We have been primarily focusing on studying interfacial electron transfer under ambient condition and electrolyte solution involving both single crystal and colloidal TiO 2 and related substrates. The resulting molecular level understanding of the fundamental interfacial electron transfer processes will be important for developing efficient light harvesting systems and broadly applicable to problems in fundamental chemistry and physics. We have made significant advancement on deciphering the underlying mechanism of the complex and inhomogeneous interfacial electron transfer dynamics in dyesensitized TiO 2 nanoparticle systems that strongly involves with and regulated by molecule-surface interactions. We have studied interfacial electron transfer on TiO 2 nanoparticle surfaces by using ultrafast single-molecule spectroscopy and electrochemical AFM metal tip scanning microscopy, focusing on understanding the interfacial electron transfer dynamics at specific nanoscale electron transfer sites with high-spatially and temporally resolved topographic-and-spectroscopic characterization at individual molecule basis, characterizing single-molecule rate processes, reaction driving force, and molecule-substrate electronic coupling. One of the most significant characteristics of our new approach is that we are able to interrogate the complex interfacial electron transfer dynamics by actively pin-point energetic manipulation of the surface interaction and electronic couplings, beyond the conventional excitation and observation.« less

Excited level populations and excitation kinetics of nonequilibrium ionizing argon discharge plasma of atmospheric pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akatsuka, Hiroshi

2009-04-15

Population densities of excited states of argon atoms are theoretically examined for ionizing argon plasma in a state of nonequilibrium under atmospheric pressure from the viewpoint of elementary processes with collisional radiative model. The dependence of excited state populations on the electron and gas temperatures is discussed. Two electron density regimes are found, which are distinguished by the population and depopulation mechanisms for the excited states in problem. When the electron impact excitation frequency for the population or depopulation is lower than the atomic impact one, the electron density of the plasma is considered as low to estimate the populationmore » and depopulation processes. Some remarkable characteristics of population and depopulation mechanisms are found for the low electron density atmospheric plasma, where thermal relaxation by atomic collisions becomes the predominant process within the group of close-energy states in the ionizing plasma of atmospheric pressure, and the excitation temperature is almost the same as the gas temperature. In addition to the collisional relaxation by argon atoms, electron impact excitation from the ground state is also an essential population mechanism. The ratios of population density of the levels pairs, between which exists a large energy gap, include information on the electron collisional kinetics. For high electron density, the effect of atomic collisional relaxation becomes weak. For this case, the excitation mechanism is explained as electron impact ladderlike excitation similar to low-pressure ionizing plasma, since the electron collision becomes the dominant process for the population and depopulation kinetics.« less

High Resolution Orientation Imaging Microscopy

DTIC Science & Technology

2012-05-02

Structure of In-Situ Deformations of Steel , TMS, San Diego, 2011 13. Jay Basinger, David Fullwood, Brent Adams, EBSD Detail Extraction for Greater Spatial...Its use has contributed to the development of new steels , aluminum alloys, high TC superconductors, electronic materials, lead-free solders, optical...Resolution The simulated pattern method has been used to recover lattice tetragonality in high-strength low- alloy steels . Since the level of

Design Notebook for Naval Air Defense Simulation (NADS). Special Programs.

DTIC Science & Technology

1982-09-15

provides high level decision making and coordination among the elements of the defending force. A more detailed description of the command center...loiter, cruise, normal intercept, and high speed intercept. Appropriate fuel consumption rates are used for each speed. When on CAP station the...Stand-Off Jammer Aircraft SW aircraft carry high power electronic transmitting equipment capable of jaimming radars and communication channels from

A computational study on the electronic and field emission properties of Mg and Si doped AlN nanocones

NASA Astrophysics Data System (ADS)

Saedi, Leila; Soleymanabadi, Hamed; Panahyab, Ataollah

2018-05-01

Following an experimental work, we explored the effect of replacing an Al atom of an AlN nanocone by Si or Mg atom on its electronic and field emission properties using density functional theory calculations. We found that both Si-doping and Mg-doping increase the electrical conductivity of AlN nanocone, but their influences on the filed emission properties are significantly different. The Si-doping increases the electron concentration of AlN nanocone and results in a large electron mobility and a low work function, whereas Mg-doping leads to a high hole concentration below the conduction level and increases the work function in agreement with the experimental results. It is predicted that Si-doped AlN nanocones show excellent filed emission performance with higher emitted electron current density compared to the pristine AlN nanocone. But the Mg-doping meaningfully decreases the emitted electron current density from the surface of AlN nanocone. The Mg-doping can increase the work function about 41.9% and the Si-doping can decrease it about 6.3%. The Mg-doping and Si-doping convert the AlN nanocone to a p-type and n-type semiconductors, respectively. Our results explain in a molecular level what observed in the experiment.

Density Functional Study on A-Units Based on Thieno[3,4- c]pyrrole-4,6-dione for Organic Solar Cells

NASA Astrophysics Data System (ADS)

Tang, Xiaoqin; Shen, Wei; Fu, Zhiyong; Liu, Xiaorui; Li, Ming

2017-08-01

The use of polymer donor materials has allowed great progress in organic solar cells. To search for potential donor materials, we have designed a series of donor-acceptor (D-A)-type alternating polymers composed of dithieno[3,2- b:2',3'- d]pyrrole (DTP) electron-rich units and thieno[3,4- c]pyrrole-4,6-dione (TPD) electron-deficient units. Their electronic and optical properties have been investigated using density functional theory and Marcus theory. The calculation results demonstrate that introduction of cyclic compounds (furyl, thienyl, and phenyl) into electron-deficient units of the molecules can result in lower highest occupied molecular orbital (HOMO) levels and reorganization energies compared with the experimental molecule ( X 0 ). To investigate the effects of electron-withdrawing units, three electron-withdrawing substituents (-OCH3, -F, and -CN) were introduced into the thienyl. The results indicated that the polymer X 2-3 will show the best performance among the designed polymers, offering low-lying HOMO energy level (-5.47 eV), narrow energy gap (1.97 eV), and high hole mobility (7.45 × 10-2 cm2 V-1 s-1). This work may provide a guideline for the design of efficient D-A polymers for organic solar cells with enhanced performance.

The development of a highly constrained health level 7 implementation guide to facilitate electronic laboratory reporting to ambulatory electronic health record systems.

PubMed

Sujansky, Walter V; Overhage, J Marc; Chang, Sophia; Frohlich, Jonah; Faus, Samuel A

2009-01-01

Electronic laboratory interfaces can significantly increase the value of ambulatory electronic health record (EHR) systems by providing laboratory result data automatically and in a computable form. However, many ambulatory EHRs cannot implement electronic laboratory interfaces despite the existence of messaging standards, such as Health Level 7, version 2 (HL7). Among several barriers to implementing laboratory interfaces is the extensive optionality within the HL7 message standard. This paper describes the rationale for and development of an HL7 implementation guide that seeks to eliminate most of the optionality inherent in HL7, but retain the information content required for reporting outpatient laboratory results. A work group of heterogeneous stakeholders developed the implementation guide based on a set of design principles that emphasized parsimony, practical requirements, and near-term adoption. The resulting implementation guide contains 93% fewer optional data elements than HL7. This guide was successfully implemented by 15 organizations during an initial testing phase and has been approved by the HL7 standards body as an implementation guide for outpatient laboratory reporting. Further testing is required to determine whether widespread adoption of the implementation guide by laboratories and EHR systems can facilitate the implementation of electronic laboratory interfaces.

Electronic structure of charge- and spin-controlled Sr(1-(x+y))La(x+y)Ti(1-x)Cr(x)O3.

PubMed

Iwasawa, H; Yamakawa, K; Saitoh, T; Inaba, J; Katsufuji, T; Higashiguchi, M; Shimada, K; Namatame, H; Taniguchi, M

2006-02-17

We present the electronic structure of Sr(1-(x+y))La(x+y)Ti(1-x)Cr(x)O3 investigated by high-resolution photoemission spectroscopy. In the vicinity of the Fermi level, it was found that the electronic structure was composed of a Cr 3d local state with the t(2g)3 configuration and a Ti 3d itinerant state. The energy levels of these Cr and Ti 3d states are well interpreted by the difference of the charge-transfer energy of both ions. The spectral weight of the Cr 3d state is completely proportional to the spin concentration x irrespective of the carrier concentration y, indicating that the spin density can be controlled by x as desired. In contrast, the spectral weight of the Ti 3d state is not proportional to y, depending on the amount of Cr doping.

Studies on electronic structure of interfaces between Ag and gelatin for stabilization of Ag nanoparticles

NASA Astrophysics Data System (ADS)

Tani, Tadaaki; Uchida, Takayuki

2015-06-01

Extremely high stability of Ag nanoparticles in photographic materials has forced us to study the electronic structures of the interfaces between thin layers of Ag, Au, and Pt and their surface membranes in ambient atmosphere by photoelectron yield spectroscopy in air and Kelvin probe method. Owing to the Fermi level equalization between a metal layer and a membrane coming from air, the electron transfer took place from the membrane to Pt and Au layers and from an Ag layer to the membrane, giving the reason for poor stability of Ag nanoparticles in air. The control of the Fermi level of an Ag layer with respect to that of a gelatin membrane in air could be widely made according to Nernst’s equation by changing the pH and pAg values of an aqueous gelatin solution used to form the membrane, and thus available to stabilize Ag nanoparticles in a gelatin matrix.

Oxygen in GaAs - Direct and indirect effects

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Skowronski, M.; Pawlowicz, L.; Lagowski, J.

1984-01-01

Oxygen has profound effects on the key electronic properties and point defects of GaAs crystals. Thus, when added in the growth system, it decreases the free electron concentration and enhances the concentration of deep donors in the resulting crystals. Both of these effects are highly beneficial for achieving semi-insulating material and have been utilized for that purpose. They have been attributed to the tendency of oxygen to getter silicon impurities during crystal growth. Only recently, it has been found that oxygen in GaAs introduces also a midgap level, ELO, with essentially the same activation energy as EL2 but with four times greater electron capture cross section. The present report reassesses the electrical and optical properties of the midgap levels in GaAs crystals grown by the horizontal Bridgman (HB) and the Czochralski-LEC techniques. Emphasis is placed on the identification of the specific effects of ELO.

Electron density inversed by plasma lines induced by suprathermal electron in the ionospheric modification experiment

NASA Astrophysics Data System (ADS)

Wang, Xiang; Zhou, Chen

2018-05-01

Incoherent scatter radar (ISR) is the most powerful ground-based measurement facility to study the ionosphere. The plasma lines are not routinely detected by the incoherent scatter radar due to the low intensity, which falls below the measured spectral noise level of the incoherent scatter radar. The plasma lines are occasionally enhanced by suprathermal electrons through the Landau damping process and detectable to the incoherent scatter radar. In this study, by using the European Incoherent Scatter Association (EISCAT) UHF incoherent scatter radar, the experiment observation presents that the enhanced plasma lines were observed. These plasma lines were considered as manifest of the suprathermal electrons generated by the high-frequency heating wave during the ionospheric modification. The electron density profile is also obtained from the enhanced plasma lines. This study can be a promising technique for obtaining the accurate electron density during ionospheric modification experiment.

A Static and Dynamic Investigation of Quantum Nonlinear Transport in Highly Dense and Mobile 2D Electron Systems

NASA Astrophysics Data System (ADS)

Dietrich, Scott

Heterostructures made of semiconductor materials may be one of most versatile environments for the study of the physics of electron transport in two dimensions. These systems are highly customizable and demonstrate a wide range of interesting physical phenomena. In response to both microwave radiation and DC excitations, strongly nonlinear transport that gives rise to non-equilibrium electron states has been reported and investigated. We have studied GaAs quantum wells with a high density of high mobility two-dimensional electrons placed in a quantizing magnetic field. This study presents the observation of several nonlinear transport mechanisms produced by the quantum nature of these materials. The quantum scattering rate, 1tau/q, is an important parameter in these systems, defining the width of the quantized energy levels. Traditional methods of extracting 1tau/q involve studying the amplitude of Shubnikov-de Haas oscillations. We analyze the quantum positive magnetoresistance due to the cyclotron motion of electrons in a magnetic field. This method gives 1tau/q and has the additional benefit of providing access to the strength of electron-electron interactions, which is not possible by conventional techniques. The temperature dependence of the quantum scattering rate is found to be proportional to the square of the temperature and is in very good agreement with theory that considers electron-electron interactions in 2D systems. In quantum wells with a small scattering rate - which corresponds to well-defined Landau levels - quantum oscillations of nonlinear resistance that are independent of magnetic field strength have been observed. These oscillations are periodic in applied bias current and are connected to quantum oscillations of resistance at zero bias: either Shubnikov-de Haas oscillations for single subband systems or magnetointersubband oscillations for two subband systems. The bias-induced oscillations can be explained by a spatial variation of electron density across the sample. The theoretical model predicts the period of these oscillations to depend on the total electron density, which has been confirmed by controlling the density through a voltage top-gate on the sample. The peculiar nonlinear mechanism of quantal heating has garned much attention recently. This bulk phenomenon is a quantum manifestation of Joule heating where an applied bias current causes selective flattening in the electron distribution function but conserves overall broadening. This produces a highly non-equilibrium distribution of electrons that drastically effects the transport properties of the system. Recent studies have proposed contributions from edge states and/or skipping orbitals. We have shown that these contributions are minimal by studying the transition to the zero differential conductance state and comparing results between Hall and Corbino geometries. This demonstrated quantal heating as the dominant nonlinear mechanism in these systems. To study the dynamics of quantal heating, we applied microwave radiation simultaneously from two sources at frequencies ƒ1 and ƒ2 and measured the response of the system at the difference frequency, ƒ=|ƒ 1-ƒ2|. This provides direct access to the rate of inelastic scattering processes, 1tau/in, that tend to bring the electron distribution back to thermal equilibrium. While conventional measurements of the temperature dependence indicate that 1tau/in is proportional to temperature, recent DC investigations and our new dynamic measurements show either T2 or T3 dependence in different magnetic fields. Our microwave experiment is the first direct access to the inelastic relaxation rate and confirms the non-linear temperature dependence.

GAS PHOTOTUBE CIRCUIT

DOEpatents

Richardson, J.H.

1958-03-01

This patent pertains to electronic circuits for measuring the intensity of light and is especially concerned with measurement between preset light thresholds. Such a circuit has application in connection with devices for reading-out information stored on punch cards or tapes where the cards and tapes are translucent. By the novel arrangement of this invention thc sensitivity of a gas phototube is maintained at a low value when the light intensity is below a first threshold level. If the light level rises above the first threshold level, the tube is rendered highly sensitive and an output signal will vary in proportion to the light intensity change. When the light level decreases below a second threshold level, the gas phototube is automatically rendered highly insensitive. Each of these threshold points is adjustable.

From hopping to ballistic transport in graphene-based electronic devices

NASA Astrophysics Data System (ADS)

Taychatanapat, Thiti

This thesis describes electronic transport experiments in graphene from the hopping to the ballistic regime. The first experiment studies dual-gated bilayer graphene devices. By applying an electric field with these dual gates, we can open a band gap in bilayer graphene and observe an increase in resistance of over six orders of magnitude as well as a strongly non-linear behavior in the transport characteristics. A temperature-dependence study of resistance at large electric field at the charge neutrality point shows the change in the transport mechanism from a hopping dominated regime at low temperature to a diffusive regime at high temperature. The second experiment examines electronic properties of Bernal-stacked trilayer graphene. Due to the low mobility of trilayer graphene on SiO 2substrates, we employ hexagonal boron nitride as a local substrate to improve its mobility. This led us to observe a quantum Hall effect with multiple Landau level crossings, proving the coexistence of massless and massive Dirac fermions in Bernal-stacked trilayer graphene. From the position of these crossing points in magnetic field and electron density, we can deduce the band parameters used to model its band structure. At high magnetic field, we observe broken symmetry states via Landau level splittings as well as crossings among these broken-symmetry states. In the third experiment, we investigate transverse magnetic focusing (TMF) in mono-, bi-, and tri-layer graphene. The ability to tune density allows us to electronically modify focal points and investigate TMF continuously from hole to electron regimes. This also allows us to observe the change in band structure of trilayer graphene as a function of applied electric field. Finally, we also observe TMF at room temperature in monolayer graphene which unambiguously proves the existence of ballistic transport at room temperature.

Responses of the photosynthetic electron transport system to excess light energy caused by water deficit in wild watermelon.

PubMed

Sanda, Satoko; Yoshida, Kazuo; Kuwano, Masayoshi; Kawamura, Tadayuki; Munekage, Yuri Nakajima; Akashi, Kinya; Yokota, Akiho

2011-07-01

In plants, drought stress coupled with high levels of illumination causes not only dehydration of tissues, but also oxidative damage resulting from excess absorbed light energy. In this study, we analyzed the regulation of electron transport under drought/high-light stress conditions in wild watermelon, a xerophyte that shows strong resistance to this type of stress. Under drought/high-light conditions that completely suppressed CO(2) fixation, the linear electron flow was diminished between photosystem (PS) II and PS I, there was no photoinhibitory damage to PS II and PS I and no decrease in the abundance of the two PSs. Proteome analyses revealed changes in the abundance of protein spots representing the Rieske-type iron-sulfur protein (ISP) and I and K subunits of NAD(P)H dehydrogenase in response to drought stress. Two-dimensional electrophoresis and immunoblot analyses revealed new ISP protein spots with more acidic isoelectric points in plants under drought stress. Our findings suggest that the modified ISPs depress the linear electron transport activity under stress conditions to protect PS I from photoinhibition. The qualitative changes in photosynthetic proteins may switch the photosynthetic electron transport from normal photosynthesis mode to stress-tolerance mode. Copyright © Physiologia Plantarum 2011.

Shaping of nested potentials for electron cooling of highly-charged ions in a cooler Penning trap

NASA Astrophysics Data System (ADS)

Paul, Stefan; Kootte, Brian; Lascar, Daniel; Gwinner, Gerald; Dilling, Jens; Titan Collaboration

2016-09-01

TRIUMF's Ion Trap for Atomic and Nuclear science (TITAN) is dedicated to mass spectrometry and decay spectroscopy of short-lived radioactive nuclides in a series of ion traps including a precision Penning trap. In order to boost the achievable precision of mass measurements TITAN deploys an Electron Beam Ion Trap (EBIT) providing Highly-Charged Ions (HCI). However, the charge breeding process in the EBIT leads to an increase in the ion bunch's energy spread which is detrimental to the overall precision gain. To reduce this effect a new cylindrical Cooler PEnning Trap (CPET) is being commissioned to sympathetically cool the HCI via a simultaneously trapped electron plasma. Simultaneous trapping of ions and electrons requires a high level of control over the nested potential landscape and sophisticated switching schemes for the voltages on CPET's multiple ring electrodes. For this purpose, we are currently setting up a new experimental control system for multi-channel voltage switching. The control system employs a Raspberry Pi communicating with a digital-to-analog board via a serial peripheral interface. We report on the implementation of the voltage control system and its performance with respect to electron and ion manipulation in CPET. University of British Columbia, Vancouver, BC, Canada.

Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications

NASA Astrophysics Data System (ADS)

Chou, Po-Chien; Hsieh, Ting-En; Cheng, Stone; del Alamo, Jesús A.; Chang, Edward Yi

2018-05-01

This study comprehensively analyzed the reliability of trapping and hot-electron effects responsible for the dynamic on-resistance (Ron) of GaN-based metal–insulator–semiconductor high electron mobility transistors. Specifically, this study performed the following analyses. First, we developed the on-the-fly Ron measurement to analyze the effects of traps during stress. With this technique, the faster one (with a pulse period of 20 ms) can characterize the degradation; the transient behavior could be monitored accurately by such short measurement pulse. Then, dynamic Ron transients were investigated under different bias conditions, including combined off state stress conditions, back-gating stress conditions, and semi-on stress conditions, in separate investigations of surface- and buffer-, and hot-electron-related trapping effects. Finally, the experiments showed that the Ron increase in semi-on state is significantly correlated with the high drain voltage and relatively high current levels (compared with the off-state current), involving the injection of greater amount of hot electrons from the channel into the AlGaN/insulator interface and the GaN buffer. These findings provide a path for device engineering to clarify the possible origins for electron traps and to accelerate the development of emerging GaN technologies.

The Impacts of Phosphorus Deficiency on the Photosynthetic Electron Transport Chain1[OPEN

PubMed Central

2018-01-01

Phosphorus (P) is an essential macronutrient, and P deficiency limits plant productivity. Recent work showed that P deficiency affects electron transport to photosystem I (PSI), but the underlying mechanisms are unknown. Here, we present a comprehensive biological model describing how P deficiency disrupts the photosynthetic machinery and the electron transport chain through a series of sequential events in barley (Hordeum vulgare). P deficiency reduces the orthophosphate concentration in the chloroplast stroma to levels that inhibit ATP synthase activity. Consequently, protons accumulate in the thylakoids and cause lumen acidification, which inhibits linear electron flow. Limited plastoquinol oxidation retards electron transport to the cytochrome b6f complex, yet the electron transfer rate of PSI is increased under steady-state growth light and is limited under high-light conditions. Under P deficiency, the enhanced electron flow through PSI increases the levels of NADPH, whereas ATP production remains restricted and, hence, reduces CO2 fixation. In parallel, lumen acidification activates the energy-dependent quenching component of the nonphotochemical quenching mechanism and prevents the overexcitation of photosystem II and damage to the leaf tissue. Consequently, plants can be severely affected by P deficiency for weeks without displaying any visual leaf symptoms. All of the processes in the photosynthetic machinery influenced by P deficiency appear to be fully reversible and can be restored in less than 60 min after resupply of orthophosphate to the leaf tissue. PMID:29540590

First detection of lead in black paper from intraoral film: an environmental concern.

PubMed

Guedes, Débora F C; Silva, Reginaldo S; da Veiga, Márcia A M S; Pecora, Jesus D

2009-10-30

Lead (Pb) contamination in the black paper that recovers intraoral films (BKP) has been investigated. BKP samples were collected from the Radiology Clinics of the Dental School of Ribeirão Preto, University of São Paulo, Brazil. For sake of comparison, four different methods were used. The results revealed the presence of high lead levels, well above the maximum limit allowed by the legislation. Pb contamination levels achieved after the following treatments: paper digestion in nitric acid, microwave treatment, DIN38414-54 method and TCLP method were 997 microg g(-1), 189 microg g(-1), 20.8 microg g(-1), and 54.0 microg g(-1), respectively. Flame atomic absorption spectrometry (FAAS) and inductively coupled plasma mass spectrometry (ICP-MS) were employed for lead determination according to the protocols of the applied methods. Lead contamination in used BKP was confirmed by scanning electron microscopy coupled with energy dispersive X-ray microanalysis (SEM-EDS). All the SEM imaging was carried out in the secondary electron mode (SE) and backscattered-electron mode (QBSD) following punctual X-ray fluorescence spectra. Soil contamination derived from this product revealed the urgent need of addressing this problem. These elevated Pb levels, show that a preliminary treatment of BKP is mandatory before it is disposed into the common trash. The high lead content of this material makes its direct dumping into the environment unwise.

A dominant electron trap in molecular beam epitaxial InAlN lattice-matched to GaN

NASA Astrophysics Data System (ADS)

Pandey, Ayush; Bhattacharya, Aniruddha; Cheng, Shaobo; Botton, Gianluigi A.; Mi, Zetian; Bhattacharya, Pallab

2018-04-01

Deep levels in lattice-matched undoped and Si-doped InAlN/GaN grown by plasma-assisted molecular beam epitaxy have been identified and characterized by capacitance and photocapacitance measurements. From x-ray diffraction, reflectance measurements, electron energy loss spectroscopy and high-resolution transmission electron microscopy it is evident that the material has two distinct phases with different compositions. These correspond to In compositions of 18.1% and 25.8%, with corresponding bandgaps of 4.6 eV and 4.1 eV, respectively. The lower bandgap material is present as columnar microstructures in the form of quantum wires. A dominant electron trap with an activation energy of 0.293  ±  0.01 eV, a small capture cross-section of (1.54  ±  0.25)  ×  10-18 cm2, and density increasing linearly with Si doping density is identified in all the samples. The characteristics of the electron trap and variation of diode capacitance are discussed in the context of carrier dynamics involving the dominant trap level and the quantum wires.

Multicomponent Density Functional Theory: Impact of Nuclear Quantum Effects on Proton Affinities and Geometries.

PubMed

Brorsen, Kurt R; Yang, Yang; Hammes-Schiffer, Sharon

2017-08-03

Nuclear quantum effects such as zero point energy play a critical role in computational chemistry and often are included as energetic corrections following geometry optimizations. The nuclear-electronic orbital (NEO) multicomponent density functional theory (DFT) method treats select nuclei, typically protons, quantum mechanically on the same level as the electrons. Electron-proton correlation is highly significant, and inadequate treatments lead to highly overlocalized nuclear densities. A recently developed electron-proton correlation functional, epc17, has been shown to provide accurate nuclear densities for molecular systems. Herein, the NEO-DFT/epc17 method is used to compute the proton affinities for a set of molecules and to examine the role of nuclear quantum effects on the equilibrium geometry of FHF - . The agreement of the computed results with experimental and benchmark values demonstrates the promise of this approach for including nuclear quantum effects in calculations of proton affinities, pK a 's, optimized geometries, and reaction paths.

Suppressed magnetic circular dichroism and valley-polarized magnetoabsorption due to the mass anisotopy in Bi

NASA Astrophysics Data System (ADS)

Kuzmenko, Alexey B.

We measure broadband far-infrared magneto-optical conductivity spectra of pure bismuth separately for left- and right-handed circular polarizations in magnetic fields up to 7 T that allows us to obtain the magnetic circular dichroism (MCD). Thanks to a high spectral resolution we distinguish the Landau level (LL) transitions in the Dirac-like electron and the parabolic hole bands. The hole transitions exhibit a full (100%) MCD as is indeed expected for a circular cyclotron orbit. However, the MCD for electron-pocket transitions is reduced to only 13 +/-1%. This strong suppression can be attributed to the huge effective-mass anisotropy ( 200) in the electron pockets and can be generally interpreted as a signature of the mismatch between the spatial metric experienced by the photons and the electrons. An important consequence of this observation is that the magneto-absorption in bismuth is highly valley sensitive, which paves the way to future valleytronic applications in materials with a strong effective-mass anisotropy.

Active space debris charging for contactless electrostatic disposal maneuvers

NASA Astrophysics Data System (ADS)

Schaub, Hanspeter; Sternovsky, Zoltán

2014-01-01

The remote charging of a passive object using an electron beam enables touchless re-orbiting of large space debris from geosynchronous orbit (GEO) using electrostatic forces. The advantage of this method is that it can operate with a separation distance of multiple craft radii, thus reducing the risk of collision. The charging of the tug-debris system to high potentials is achieved by active charge transfer using a directed electron beam. Optimal potential distributions using isolated- and coupled-sphere models are discussed. A simple charging model takes into account the primary electron beam current, ultra-violet radiation induced photoelectron emission, collection of plasma particles, secondary electron emission and the recapture of emitted particles. The results show that through active charging in a GEO space environment high potentials can be both achieved and maintained with about a 75% transfer efficiency. Further, the maximum electrostatic tractor force is shown to be insensitive to beam current levels. This latter later result is important when considering debris with unknown properties.

Imaging electronic states on topological semimetals using scanning tunneling microscopy

DOE PAGES

Gyenis, András; Inoue, Hiroyuki; Jeon, Sangjun; ...

2016-10-18

Following the intense studies on topological insulators, significant efforts have recently been devoted to the search for gapless topological systems. These materials not only broaden the topological classification of matter but also provide a condensed matter realization of various relativistic particles and phenomena previously discussed mainly in high energy physics. Weyl semimetals host massless, chiral, low-energy excitations in the bulk electronic band structure, whereas a symmetry protected pair of Weyl fermions gives rise to massless Dirac fermions.Weemployed scanning tunneling microscopy/spectroscopy to explore the behavior of electronic states both on the surface and in the bulk of topological semimetal phases. Bymore » mapping the quasiparticle interference (QPI) and emerging Landau levels at high magnetic field in Dirac semimetals Cd 3As 2 and Na 3Bi, we observed extended Dirac-like bulk electronic bands. QPI imaged on Weyl semimetal TaAs demonstrated the predicted momentum dependent delocalization of Fermi arc surface states in the vicinity of the surface projected Weyl nodes.« less

Magnetic field dependent electronic transport of Mn4 single-molecule magnet.

NASA Astrophysics Data System (ADS)

Haque, F.; Langhirt, M.; Henderson, J. J.; Del Barco, E.; Taguchi, T.; Christou, G.

2010-03-01

We have performed single-electron transport measurements on a Mn4 single-molecule magnet (SMM) in where amino groups were added to electrically protect the magnetic core and to increase the stability of the molecule when deposited on the single-electron transistor (SET) chip. A three-terminal SET with nano-gap electro-migrated gold electrodes and a naturally oxidized Aluminum back gate. Experiments were conducted at temperatures down to 230mK in the presence of high magnetic fields generated by a superconducting vector magnet. Mn4 molecules were deposited from solution to form a mono-layer. The optimum deposition time was determined by AFM analysis on atomically flat gold surfaces. We have observed Coulomb blockade an electronic excitations that curve with the magnetic field and present zero-field splitting, which represents evidence of magnetic anisotropy. Level anticrossings and large excitations slopes are associated with the behavior of molecular states with high spin values (S ˜ 9), as expected from Mn4.

Effects of high energy radiation on the mechanical properties of epoxy/graphite fiber composites

NASA Technical Reports Server (NTRS)

Fornes, R. E.; Memory, J. D.

1981-01-01

Studies on the effects of high energy radiation on graphite fiber reinforced composites are summarized. Studies of T300/5208 and C6000/PMR15 composites, T300 fibers and the resin system MY720/DDS (tetraglycidyl-4,4'-diaminodiphenyl methane cured with diaminodiphenyl sulfone) are included. Radiation dose levels up to 8000 Mrads were obtained with no deleterious effects on the breaking stress or modulus. The effects on the structure and morphology were investigated using mechanical tests, electron spin resonance, X-ray diffraction, and electron spectroscopy for chemical analysis (ESCA or X-ray photoelectron spectroscopy). Details of the experiments and results are given. Studies of the fracture surfaces of irradiated samples were studied with scanning electron microscopy; current results indicate no differences in the morphology of irradiated and control samples.

Power Electronics Thermal Management Research: Annual Progress Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreno, Gilberto

The objective for this project is to develop thermal management strategies to enable efficient and high-temperature wide-bandgap (WBG)-based power electronic systems (e.g., emerging inverter and DC-DC converter). Reliable WBG devices are capable of operating at elevated temperatures (≥ 175 °Celsius). However, packaging WBG devices within an automotive inverter and operating them at higher junction temperatures will expose other system components (e.g., capacitors and electrical boards) to temperatures that may exceed their safe operating limits. This creates challenges for thermal management and reliability. In this project, system-level thermal analyses are conducted to determine the effect of elevated device temperatures on invertermore » components. Thermal modeling work is then conducted to evaluate various thermal management strategies that will enable the use of highly efficient WBG devices with automotive power electronic systems.« less