Capacity of Heterogeneous Mobile Wireless Networks with D-Delay Transmission Strategy.

PubMed

Wu, Feng; Zhu, Jiang; Xi, Zhipeng; Gao, Kai

2016-03-25

This paper investigates the capacity problem of heterogeneous wireless networks in mobility scenarios. A heterogeneous network model which consists of n normal nodes and m helping nodes is proposed. Moreover, we propose a D-delay transmission strategy to ensure that every packet can be delivered to its destination nodes with limited delay. Different from most existing network schemes, our network model has a novel two-tier architecture. The existence of helping nodes greatly improves the network capacity. Four types of mobile networks are studied in this paper: i.i.d. fast mobility model and slow mobility model in two-dimensional space, i.i.d. fast mobility model and slow mobility model in three-dimensional space. Using the virtual channel model, we present an intuitive analysis of the capacity of two-dimensional mobile networks and three-dimensional mobile networks, respectively. Given a delay constraint D, we derive the asymptotic expressions for the capacity of the four types of mobile networks. Furthermore, the impact of D and m to the capacity of the whole network is analyzed. Our findings provide great guidance for the future design of the next generation of networks.

High-mobility capacitively-induced two-dimensional electrons in a lateral superlattice potential

DOE PAGES

Lu, Tzu -Ming; Laroche, Dominique; Huang, S. -H.; ...

2016-01-01

In the presence of a lateral periodic potential modulation, two-dimensional electrons may exhibit interesting phenomena, such as a graphene-like energy-momentum dispersion, Bloch oscillations, or the Hofstadter butterfly band structure. To create a sufficiently strong potential modulation using conventional semiconductor heterostructures, aggressive device processing is often required, unfortunately resulting in strong disorder that masks the sought-after effects. Here, we report a novel fabrication process flow for imposing a strong lateral potential modulation onto a capacitively induced two-dimensional electron system, while preserving the host material quality. Using this process flow, the electron density in a patterned Si/SiGe heterostructure can be tuned overmore » a wide range, from 4.4 × 10 10 cm –2 to 1.8 × 10 11 cm –2, with a peak mobility of 6.4 × 10 5 cm 2/V·s. The wide density tunability and high electron mobility allow us to observe sequential emergence of commensurability oscillations as the density, the mobility, and in turn the mean free path, increase. Magnetic-field-periodic quantum oscillations associated with various closed orbits also emerge sequentially with increasing density. We show that, from the density dependence of the quantum oscillations, one can directly extract the steepness of the imposed superlattice potential. Lastly, this result is then compared to a conventional lateral superlattice model potential.« less

Effect of cation ordering on oxygen vacancy diffusion pathways in double perovskites

DOE PAGES

Uberuaga, Blas Pedro; Pilania, Ghanshyam

2015-07-08

Perovskite structured oxides (ABO 3) are attractive for a number of technological applications, including as superionics because of the high oxygen conductivities they exhibit. Double perovskites (AA’BB’O 6) provide even more flexibility for tailoring properties. Using accelerated molecular dynamics, we examine the role of cation ordering on oxygen vacancy mobility in one model double perovskite SrLaTiAlO 6. We find that the mobility of the vacancy is very sensitive to the cation ordering, with a migration energy that varies from 0.6 to 2.7 eV. In the extreme cases, the mobility is both higher and lower than either of the two endmore » member single perovskites. Further, the nature of oxygen vacancy diffusion, whether one-dimensional, two-dimensional, or three-dimensional, also varies with cation ordering. We correlate the dependence of oxygen mobility on cation structure to the distribution of Ti 4+ cations, which provide unfavorable environments for the positively charged oxygen vacancy. The results demonstrate the potential of using tailored double perovskite structures to precisely control the behavior of oxygen vacancies in these materials.« less

Measurement of brightness temperature of two-dimensional electron gas in channel of a high electron mobility transistor at ultralow dissipation power

NASA Astrophysics Data System (ADS)

Korolev, A. M.; Shulga, V. M.; Turutanov, O. G.; Shnyrkov, V. I.

2016-07-01

A technically simple and physically clear method is suggested for direct measurement of the brightness temperature of two-dimensional electron gas (2DEG) in the channel of a high electron mobility transistor (HEMT). The usage of the method was demonstrated with the pseudomorphic HEMT as a specimen. The optimal HEMT dc regime, from the point of view of the "back action" problem, was found to belong to the unsaturated area of the static characteristics possibly corresponding to the ballistic electron transport mode. The proposed method is believed to be a convenient tool to explore the ballistic transport, electron diffusion, 2DEG properties and other electrophysical processes in heterostructures.

Two-dimensional numerical model for the high electron mobility transistor

NASA Astrophysics Data System (ADS)

Loret, Dany

1987-11-01

A two-dimensional numerical drift-diffusion model for the High Electron Mobility Transistor (HEMT) is presented. Special attention is paid to the modeling of the current flow over the heterojunction. A finite difference scheme is used to solve the equations, and a variable mesh spacing was implemented to cope with the strong variations of functions near the heterojunction. Simulation results are compared to experimental data for a 0.7 μm gate length device. Small-signal transconductances and cut-off frequency obtained from the 2-D model agree well with the experimental values from S-parameter measurements. It is shown that the numerical models give good insight into device behaviour, including important parasitic effects such as electron injection into the bulk GaAs.

High transport and excellent optical property of a two-dimensional single-layered hybrid perovskite (C4H9NH3)2PbBr4: a theoretical study.

PubMed

Lei, Jun-Hui; Zhao, Yu-Qing; Tang, Qiong; Lin, Jian-Guo; Cai, Meng-Qiu

2018-05-16

Organic-inorganic hybrid perovskites are developed to pursue high charge carrier mobility and light absorption coefficient. In this study, we present a detailed comparative research of the atomic and electronic structures of single-layered perovskites (C4H9NH3)2PbBr4 with two-dimensional/three-dimensional (2D/3D) spatial arrangement to predict the in plane charge carrier mobility along with the charge effective mass, elastic constant, and deformation potential. The calculated results reveal that the intrinsic in plane carrier mobilities of 2D single-layered hybrid perovskite (C4H9NH3)2PbBr4 along the 100 and 010 directions are superior to those of the 3D structure. Furthermore, the optical properties are calculated from the electronic structure; it is found that the light absorption spectrum of 2D single-layered perovskite (C4H9NH3)2PbBr4 with a high absorption coefficient is wider than that of the 3D phase. We speculate that the superior mobility and wider absorption spectrum of the 2D mono-layered perovskite are due to high charge density and ferroelectricity originating from structure distortion upon 3D-to-2D structure transformation. These results indicate that the 2D single-layered hybrid perovskite (C4H9NH3)2PbBr4 is a potential candidate for application in the optoelectronic and photovoltaic fields.

Thermal Investigation of Three-Dimensional GaN-on-SiC High Electron Mobility Transistors

DTIC Science & Technology

2017-07-01

AFRL-RY-WP-TR-2017-0143 THERMAL INVESTIGATION OF THREE- DIMENSIONAL GaN-on-SiC HIGH ELECTRON MOBILITY TRANSISTORS Qing Hao The University of Arizona...To) July 2017 Final 08 April 2015 – 10 April 2017 4. TITLE AND SUBTITLE THERMAL INVESTIGATION OF THREE-DIMENSIONAL GaN-on-SiC HIGH ELECTRON MOBILITY...used in many DoD applications, including integrated radio frequency (RF) amplifiers and power electronics . However, inherent inefficiencies in

Far-infrared-induced magnetoresistance oscillations in GaAs/AlxGa1-xAs -based two-dimensional electron systems

NASA Astrophysics Data System (ADS)

Wirthmann, André; McCombe, Bruce D.; Heitmann, Detlef; Holland, Steffen; Friedland, Klaus-Jürgen; Hu, Can-Ming

2007-11-01

We report on photoresistance and magnetotransport measurements in a moderate mobility two-dimensional electron system subject to far-infrared (terahertz) radiation. The photoresistance shows radiation induced 1/B -periodic oscillations, which we identify as the terahertz analog of microwave-induced resistance oscillations (MIROs). The MIRO-analog oscillations show a sign reversal in the low-field, high current regime. We simultaneously observe magnetoplasmons and MIRO-analog oscillations with no apparent coupling between them. Using a meandering Hall-bar geometry allows us to greatly enhance sensitivity and detect these oscillations even at elevated temperatures and moderate mobilities.

Effect of molecular asymmetry on the charge transport physics of high mobility n-type molecular semiconductors investigated by scanning Kelvin probe microscopy.

PubMed

Hu, Yuanyuan; Berdunov, Nikolai; Di, Chong-an; Nandhakumar, Iris; Zhang, Fengjiao; Gao, Xike; Zhu, Daoben; Sirringhaus, Henning

2014-07-22

We have investigated the influence of the symmetry of the side chain substituents in high-mobility, solution processable n-type molecular semiconductors on the performance of organic field-effect transistors (OFETs). We compare two molecules with the same conjugated core, but either symmetric or asymmetric side chain substituents, and investigate the transport properties and thin film growth mode using scanning Kelvin probe microscopy (SKPM) and atomic force microscopy (AFM). We find that asymmetric side chains can induce a favorable two-dimensional growth mode with a bilayer structure, which enables ultrathin films with a single bilayer to exhibit excellent transport properties, while the symmetric molecules adopt an unfavorable three-dimensional growth mode in which transport in the first monolayer at the interface is severely hindered by high-resistance grain boundaries.

High-mobility ambipolar ZnO-graphene hybrid thin film transistors.

PubMed

Song, Wooseok; Kwon, Soon Yeol; Myung, Sung; Jung, Min Wook; Kim, Seong Jun; Min, Bok Ki; Kang, Min-A; Kim, Sung Ho; Lim, Jongsun; An, Ki-Seok

2014-02-11

In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of 329.7 ± 16.9 cm(2)/V·s, and a high on-off ratio of 10(5). The ambipolar behavior of the ZnO/graphene hybrid TFT with high electron mobility could be due to the superimposed density of states involving the donor states in the bandgap of ZnO thin films and the linear dispersion of monolayer graphene. We further established an applicable circuit model for understanding the improvement in carrier mobility of ZnO/graphene hybrid TFTs.

Wedge-Shaped GaN Nanowalls: A Potential Candidate for Two-Dimensional Electronics and Spintronics

NASA Astrophysics Data System (ADS)

Deb, Swarup; Dhar, Subhabrata

Schrödingerand Poisson equations are solved self-consistently in order to obtain the potential and charge density distribution in n-type GaN nanowalls tapered along c-axis by different angles. The study shows two-dimensional (2D) quantum confinement of electrons in the central vertical plane of the wall for the entire range of tapering. Calculation of room temperature electron mobility in the 2D channel shows a steady decrease with the increase of the inclination angle of the side facets with respect to the base. However, it is interesting to note that the mobility remains to be much larger than that of bulk GaN even for the inclination angle of 65∘. The properties of high mobility and the vertical orientation of the 2DEG plane in this system can be exploited in fabricating highly conducting transparent interconnects and field effect transistors, which can lead to large scale integration of 2D devices in future.

Suppressed carrier density for the patterned high mobility two-dimensional electron gas at γ-Al2O3/SrTiO3 heterointerfaces

NASA Astrophysics Data System (ADS)

Niu, Wei; Gan, Yulin; Zhang, Yu; Valbjørn Christensen, Dennis; von Soosten, Merlin; Wang, Xuefeng; Xu, Yongbing; Zhang, Rong; Pryds, Nini; Chen, Yunzhong

2017-07-01

The two-dimensional electron gas (2DEG) at the non-isostructural interface between spinel γ-Al2O3 and perovskite SrTiO3 is featured by a record electron mobility among complex oxide interfaces in addition to a high carrier density up to the order of 1015 cm-2. Herein, we report on the patterning of 2DEG at the γ-Al2O3/SrTiO3 interface grown at 650 °C by pulsed laser deposition using a hard mask of LaMnO3. The patterned 2DEG exhibits a critical thickness of 2 unit cells of γ-Al2O3 for the occurrence of interface conductivity, similar to the unpatterned sample. However, its maximum carrier density is found to be approximately 3 × 1013 cm-2, much lower than that of the unpatterned sample (˜1015 cm-2). Remarkably, a high electron mobility of approximately 3600 cm2 V-1 s-1 was obtained at low temperatures for the patterned 2DEG at a carrier density of ˜7 × 1012 cm-2, which exhibits clear Shubnikov-de Haas quantum oscillations. The patterned high-mobility 2DEG at the γ-Al2O3/SrTiO3 interface paves the way for the design and application of spinel/perovskite interfaces for high-mobility all-oxide electronic devices.

Wafer-Scale and Wrinkle-Free Epitaxial Growth of Single-Orientated Multilayer Hexagonal Boron Nitride on Sapphire.

PubMed

Jang, A-Rang; Hong, Seokmo; Hyun, Chohee; Yoon, Seong In; Kim, Gwangwoo; Jeong, Hu Young; Shin, Tae Joo; Park, Sung O; Wong, Kester; Kwak, Sang Kyu; Park, Noejung; Yu, Kwangnam; Choi, Eunjip; Mishchenko, Artem; Withers, Freddie; Novoselov, Kostya S; Lim, Hyunseob; Shin, Hyeon Suk

2016-05-11

Large-scale growth of high-quality hexagonal boron nitride has been a challenge in two-dimensional-material-based electronics. Herein, we present wafer-scale and wrinkle-free epitaxial growth of multilayer hexagonal boron nitride on a sapphire substrate by using high-temperature and low-pressure chemical vapor deposition. Microscopic and spectroscopic investigations and theoretical calculations reveal that synthesized hexagonal boron nitride has a single rotational orientation with AA' stacking order. A facile method for transferring hexagonal boron nitride onto other target substrates was developed, which provides the opportunity for using hexagonal boron nitride as a substrate in practical electronic circuits. A graphene field effect transistor fabricated on our hexagonal boron nitride sheets shows clear quantum oscillation and highly improved carrier mobility because the ultraflatness of the hexagonal boron nitride surface can reduce the substrate-induced degradation of the carrier mobility of two-dimensional materials.

Electric microwave absorption for the study of GaAs/AlGaAs heterostructure systems

NASA Astrophysics Data System (ADS)

Zappe, Hans P.; Jantz, Wolfgang

1990-12-01

The use of magnetic-field-dependent microwave absorption as a nondestructive and contact-free means to study transport behavior in GaAs/AlGaAs devices is explored. This technique allows quick measurement of resistance, mobility, and carrier concentration in bulk substrates as well as in the two-dimensional electron gas of heterostructure quantum wells. The two- and three-dimensional conductivities may be separably evaluated, allowing detailed study of conduction in the active layer of high-electron-mobility devices. A brief theoretical foundation is provided, followed by application of the approach to examination of device structural dependencies, carrier-density conduction behavior, and the effects of etch processing on quantum-well integrity.

Improved Tandem Measurement Techniques for Aerosol Particle Analysis

NASA Astrophysics Data System (ADS)

Rawat, Vivek Kumar

Non-spherical, chemically inhomogeneous (complex) nanoparticles are encountered in a number of natural and engineered environments, including combustion systems (which produces highly non-spherical aggregates), reactors used in gas-phase materials synthesis of doped or multicomponent materials, and in ambient air. These nanoparticles are often highly diverse in size, composition and shape, and hence require determination of property distribution functions for accurate characterization. This thesis focuses on development of tandem mobility-mass measurement techniques coupled with appropriate data inversion routines to facilitate measurement of two dimensional size-mass distribution functions while correcting for the non-idealities of the instruments. Chapter 1 provides the detailed background and motivation for the studies performed in this thesis. In chapter 2, the development of an inversion routine is described which is employed to determine two dimensional size-mass distribution functions from Differential Mobility Analyzer-Aerosol Particle Mass analyzer tandem measurements. Chapter 3 demonstrates the application of the two dimensional distribution function to compute cumulative mass distribution function and also evaluates the validity of this technique by comparing the calculated total mass concentrations to measured values for a variety of aerosols. In Chapter 4, this tandem measurement technique with the inversion routine is employed to analyze colloidal suspensions. Chapter 5 focuses on application of a transverse modulation ion mobility spectrometer coupled with a mass spectrometer to study the effect of vapor dopants on the mobility shifts of sub 2 nm peptide ion clusters. These mobility shifts are then compared to models based on vapor uptake theories. Finally, in Chapter 6, a conclusion of all the studies performed in this thesis is provided and future avenues of research are discussed.

Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit.

PubMed

Zhang, Yuhan; Qiao, Jingsi; Gao, Si; Hu, Fengrui; He, Daowei; Wu, Bing; Yang, Ziyi; Xu, Bingchen; Li, Yun; Shi, Yi; Ji, Wei; Wang, Peng; Wang, Xiaoyong; Xiao, Min; Xu, Hangxun; Xu, Jian-Bin; Wang, Xinran

2016-01-08

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ∼3  nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals.

Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit

NASA Astrophysics Data System (ADS)

Zhang, Yuhan; Qiao, Jingsi; Gao, Si; Hu, Fengrui; He, Daowei; Wu, Bing; Yang, Ziyi; Xu, Bingchen; Li, Yun; Shi, Yi; Ji, Wei; Wang, Peng; Wang, Xiaoyong; Xiao, Min; Xu, Hangxun; Xu, Jian-Bin; Wang, Xinran

2016-01-01

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ˜3 nm . Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals.

Improved mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically smooth heterointerface

NASA Astrophysics Data System (ADS)

Hosomi, Daiki; Miyachi, Yuta; Egawa, Takashi; Miyoshi, Makoto

2018-04-01

We attempted to improve the mobility of InAlN/AlGaN two-dimensional electron gas (2DEG) heterostructures by achieving an atomically smooth heterointerface in metalorganic chemical vapor deposition processes. In the result, it was confirmed that the high-growth-rate AlGaN layer was very effective to improve the surface morphology. The atomically smooth surface morphology with a root-mean-square roughness of 0.26 nm was achieved for an Al0.15Ga0.85N layer under the growth rate of approximately 6 µm/h. Furthermore, nearly lattice-matched In0.17Al0.83N/Al0.15Ga0.85N 2DEG heterostructures with the atomically smooth heterointerface exhibited a 2DEG mobility of 242 cm2 V-1 s-1 with a 2DEG density of 2.6 × 1013/cm2, which was approximately 1.5 times larger than the mobility in a sample grown under original conditions.

High-mobility ambipolar ZnO-graphene hybrid thin film transistors

PubMed Central

Song, Wooseok; Kwon, Soon Yeol; Myung, Sung; Jung, Min Wook; Kim, Seong Jun; Min, Bok Ki; Kang, Min-A; Kim, Sung Ho; Lim, Jongsun; An, Ki-Seok

2014-01-01

In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of 329.7 ± 16.9 cm2/V·s, and a high on-off ratio of 105. The ambipolar behavior of the ZnO/graphene hybrid TFT with high electron mobility could be due to the superimposed density of states involving the donor states in the bandgap of ZnO thin films and the linear dispersion of monolayer graphene. We further established an applicable circuit model for understanding the improvement in carrier mobility of ZnO/graphene hybrid TFTs. PMID:24513629

Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping

NASA Astrophysics Data System (ADS)

Chen, Y. Z.; Trier, F.; Wijnands, T.; Green, R. J.; Gauquelin, N.; Egoavil, R.; Christensen, D. V.; Koster, G.; Huijben, M.; Bovet, N.; Macke, S.; He, F.; Sutarto, R.; Andersen, N. H.; Sulpizio, J. A.; Honig, M.; Prawiroatmodjo, G. E. D. K.; Jespersen, T. S.; Linderoth, S.; Ilani, S.; Verbeeck, J.; van Tendeloo, G.; Rijnders, G.; Sawatzky, G. A.; Pryds, N.

2015-08-01

Two-dimensional electron gases (2DEGs) formed at the interface of insulating complex oxides promise the development of all-oxide electronic devices. These 2DEGs involve many-body interactions that give rise to a variety of physical phenomena such as superconductivity, magnetism, tunable metal-insulator transitions and phase separation. Increasing the mobility of the 2DEG, however, remains a major challenge. Here, we show that the electron mobility is enhanced by more than two orders of magnitude by inserting a single-unit-cell insulating layer of polar La1-xSrxMnO3 (x = 0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 produced at room temperature. Resonant X-ray spectroscopy and transmission electron microscopy show that the manganite layer undergoes unambiguous electronic reconstruction, leading to modulation doping of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits Shubnikov-de Haas oscillations and fingerprints of the quantum Hall effect, demonstrating unprecedented high mobility and low electron density.

Patterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors

PubMed Central

Zheng, Wenshan; Xie, Tian; Zhou, Yu; Chen, Y.L.; Jiang, Wei; Zhao, Shuli; Wu, Jinxiong; Jing, Yumei; Wu, Yue; Chen, Guanchu; Guo, Yunfan; Yin, Jianbo; Huang, Shaoyun; Xu, H.Q.; Liu, Zhongfan; Peng, Hailin

2015-01-01

Patterning of high-quality two-dimensional chalcogenide crystals with unique planar structures and various fascinating electronic properties offers great potential for batch fabrication and integration of electronic and optoelectronic devices. However, it remains a challenge that requires accurate control of the crystallization, thickness, position, orientation and layout. Here we develop a method that combines microintaglio printing with van der Waals epitaxy to efficiently pattern various single-crystal two-dimensional chalcogenides onto transparent insulating mica substrates. Using this approach, we have patterned large-area arrays of two-dimensional single-crystal Bi2Se3 topological insulator with a record high Hall mobility of ∼1,750 cm2 V−1 s−1 at room temperature. Furthermore, our patterned two-dimensional In2Se3 crystal arrays have been integrated and packaged to flexible photodetectors, yielding an ultrahigh external photoresponsivity of ∼1,650 A W−1 at 633 nm. The facile patterning, integration and packaging of high-quality two-dimensional chalcogenide crystals hold promise for innovations of next-generation photodetector arrays, wearable electronics and integrated optoelectronic circuits. PMID:25898022

Electron heating due to microwave photoexcitation in the high mobility GaAs/AlGaAs two dimensional electron system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramanayaka, A. N.; Mani, R. G.; Wegscheider, W.

2013-12-04

We extract the electron temperature in the microwave photo-excited high mobility GaAs/AlGaAs two dimensional electron system (2DES) by studying the influence of microwave radiation on the amplitude of Shubnikov-de Haas oscillations (SdHOs) in a regime where the cyclotron frequency, ω{sub c}, and the microwave angular frequency, ω, satisfy 2ω ≤ ω{sub c} ≤ 3.5ω The results indicate that increasing the incident microwave power has a weak effect on the amplitude of the SdHOs and therefore the electron temperature, in comparison to the influence of modest temperature changes on the dark-specimen SdH effect. The results indicate negligible electron heating under modestmore » microwave photo-excitation, in good agreement with theoretical predictions.« less

A high-throughput three-dimensional cell migration assay for toxicity screening with mobile device-based macroscopic image analysis

PubMed Central

Timm, David M.; Chen, Jianbo; Sing, David; Gage, Jacob A.; Haisler, William L.; Neeley, Shane K.; Raphael, Robert M.; Dehghani, Mehdi; Rosenblatt, Kevin P.; Killian, T. C.; Tseng, Hubert; Souza, Glauco R.

2013-01-01

There is a growing demand for in vitro assays for toxicity screening in three-dimensional (3D) environments. In this study, 3D cell culture using magnetic levitation was used to create an assay in which cells were patterned into 3D rings that close over time. The rate of closure was determined from time-lapse images taken with a mobile device and related to drug concentration. Rings of human embryonic kidney cells (HEK293) and tracheal smooth muscle cells (SMCs) were tested with ibuprofen and sodium dodecyl sulfate (SDS). Ring closure correlated with the viability and migration of cells in two dimensions (2D). Images taken using a mobile device were similar in analysis to images taken with a microscope. Ring closure may serve as a promising label-free and quantitative assay for high-throughput in vivo toxicity in 3D cultures. PMID:24141454

Highly anisotropic mobility in solution processed TIPS-pentacene film studied by independently driven four GaIn probes

NASA Astrophysics Data System (ADS)

Yoshimoto, Shinya; Takahashi, Kohtaro; Suzuki, Mitsuharu; Yamada, Hiroko; Miyahara, Ryosuke; Mukai, Kozo; Yoshinobu, Jun

2017-08-01

We have studied in-plane anisotropy in the field-effect mobility of solution-processed organic semiconductor 6,13-bis(triisopropylsilylethynyl)pentacene by using independently driven four gallium indium (Ga-In) probes. Liquid-metal Ga-In probes are highly effective for reproducible conductivity measurements of organic thin films. We demonstrated that a high mobility anisotropy of 44 was obtained by using a square four-probe method and a feedback circuit to keep the channel potential constant. The present method minimized the influences of the contact resistance and the insensitivity of anisotropy in a linear arrangement in two-dimensional field-effect transistors.

Response of a 2DEG to Microwave Irradiation

NASA Astrophysics Data System (ADS)

Moreau, S.; Fedorych, O. M.; Sadowski, M. L.; Potemski, M.; Studenikin, S.; Austing, G.; Sachrajda, A. S.; Saku, T.; Hirayama, Y.

In this paper, we study the behavior of a high mobility two dimensional electron gas under microwave irradiation by means of magneto-photoluminescence (PL) and absorption measurements. The high mobility sample investigated is a 15nm wide GaAs/AlGaAs quantum well with an electron concentration between 1-2×1011cm-2, tunable by visible-light illumination. Structures in the microwave absorption at 40-60GHz are identified as geometrically confined magneto-plasmons.

Device for two-dimensional gas-phase separation and characterization of ion mixtures

DOEpatents

Tang, Keqi [Richland, WA; Shvartsburg, Alexandre A [Richland, WA; Smith, Richard D [Richland, WA

2006-12-12

The present invention relates to a device for separation and characterization of gas-phase ions. The device incorporates an ion source, a field asymmetric waveform ion mobility spectrometry (FAIMS) analyzer, an ion mobility spectrometry (IMS) drift tube, and an ion detector. In one aspect of the invention, FAIMS operating voltages are electrically floated on top of the IMS drift voltage. In the other aspect, the FAIMS/IMS interface is implemented employing an electrodynamic ion funnel, including in particular an hourglass ion funnel. The present invention improves the efficiency (peak capacity) and sensitivity of gas-phase separations; the online FAIMS/IMS coupling creates a fundamentally novel two-dimensional gas-phase separation technology with high peak capacity, specificity, and exceptional throughput.

A Two-Dimensional Model of Teacher Retention and Mobility: Classroom Teachers and Their University Partners Take a Closer Look at a Vexing Problem

ERIC Educational Resources Information Center

Swars, Susan L.; Meyers, Barbara; Mays, Lydia C.; Lack, Brian

2009-01-01

This mixed-methods study is a teacher-initiated, collaborative inquiry involving a professional development school (PDS) and a university. The investigation focused on teachers' perceptions of teacher retention and mobility at their PDS. Participants were 134 teachers at a high-needs elementary school with data sources including surveys,…

Tuning the Two-Dimensional Electron Liquid at Oxide Interfaces by Buffer-Layer-Engineered Redox Reactions.

PubMed

Chen, Yunzhong; Green, Robert J; Sutarto, Ronny; He, Feizhou; Linderoth, Søren; Sawatzky, George A; Pryds, Nini

2017-11-08

Polar discontinuities and redox reactions provide alternative paths to create two-dimensional electron liquids (2DELs) at oxide interfaces. Herein, we report high mobility 2DELs at interfaces involving SrTiO 3 (STO) achieved using polar La 7/8 Sr 1/8 MnO 3 (LSMO) buffer layers to manipulate both polarities and redox reactions from disordered overlayers grown at room temperature. Using resonant X-ray reflectometry experiments, we quantify redox reactions from oxide overlayers on STO as well as polarity induced electronic reconstruction at epitaxial LSMO/STO interfaces. The analysis reveals how these effects can be combined in a STO/LSMO/disordered film trilayer system to yield high mobility modulation doped 2DELs, where the buffer layer undergoes a partial transformation from perovskite to brownmillerite structure. This uncovered interplay between polar discontinuities and redox reactions via buffer layers provides a new approach for the design of functional oxide interfaces.

Polarization-dependent plasmonic photocurrents in two-dimensional electron systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Popov, V. V., E-mail: popov-slava@yahoo.co.uk; Saratov State University, Saratov 410012; Saratov Scientific Center of the Russian Academy of Sciences, Saratov 410028

2016-06-27

Plasmonic polarization dependent photocurrents in a homogeneous two-dimensional electron system are studied. Those effects are completely different from the photon drag and electronic photogalvanic effects as well as from the plasmonic ratchet effect in a density modulated two-dimensional electron system. Linear and helicity-dependent contributions to the photocurrent are found. The linear contribution can be interpreted as caused by the longitudinal and transverse plasmon drag effect. The helicity-dependent contribution originates from the non-linear electron convection and changes its sign with reversing the plasmonic field helicity. It is shown that the helicity-dependent component of the photocurrent can exceed the linear one bymore » several orders of magnitude in high-mobility two-dimensional electron systems. The results open possibilities for all-electronic detection of the radiation polarization states by exciting the plasmonic photocurrents in two-dimensional electron systems.« less

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Deen, David A.; Miller, Ross A.; Osinsky, Andrei V.; Downey, Brian P.; Storm, David F.; Meyer, David J.; Scott Katzer, D.; Nepal, Neeraj

2016-12-01

A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG) channels are utilized such that the top 2DEG serves as an equipotential that screens potential fluctuations resulting from surface trapped charge. The bottom channel serves as the transistor's modulated channel. Two device modeling approaches have been performed as a means to guide the device design and to elucidate the relationship between the design and performance metrics. The modeling efforts include a self-consistent Poisson-Schrodinger solution for electrostatic simulation as well as hydrodynamic three-dimensional device modeling for three-dimensional electrostatics, steady-state, and transient simulations. Experimental results validated the HEMT design whereby homo-epitaxial growth on free-standing GaN substrates and fabrication of the same-wafer dual-channel and recessed-gate AlN/GaN HEMTs have been demonstrated. Notable pulsed-gate performance has been achieved by the fabricated HEMTs through a gate lag ratio of 0.86 with minimal drain current collapse while maintaining high levels of dc and rf performance.

Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector

NASA Astrophysics Data System (ADS)

Li, Jin-Lun; Cui, Shao-Hui; Xu, Jian-Xing; Cui, Xiao-Ran; Guo, Chun-Yan; Ma, Ben; Ni, Hai-Qiao; Niu, Zhi-Chuan

2018-04-01

Not Available Project supported by the Foundation for Scientific Instrument and Equipment Development, Chinese Academy of Sciences (Grant No. YJKYYQ20170032) and the National Natural Science Foundation of China (Grant No. 61435012).

Supersonic N-Crowdions in a Two-Dimensional Morse Crystal

NASA Astrophysics Data System (ADS)

Dmitriev, S. V.; Korznikova, E. A.; Chetverikov, A. P.

2018-03-01

An interstitial atom placed in a close-packed atomic row of a crystal is called crowdion. Such defects are highly mobile; they can move along the row, transferring mass and energy. We generalize the concept of a classical supersonic crowdion to an N-crowdion in which not one but N atoms move simultaneously with a high velocity. Using molecular dynamics simulations for a close-packed two-dimensional Morse crystal, we show that N-crowdions transfer mass much more efficiently, because they are capable of covering large distances while having a lower total energy than that of a classical 1-crowdion.

Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon.

PubMed

Lin, Che-Yu; Zhu, Xiaodan; Tsai, Shin-Hung; Tsai, Shiao-Po; Lei, Sidong; Shi, Yumeng; Li, Lain-Jong; Huang, Shyh-Jer; Wu, Wen-Fa; Yeh, Wen-Kuan; Su, Yan-Kuin; Wang, Kang L; Lan, Yann-Wen

2017-11-28

High-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting electronics is highly desirable for the development of mobile devices, wearable electronic systems, and defense technologies. In this work, the experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe 2 -MoS 2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density, and flexible electronics.

[Separation and purification of the components in Trachelospermum jasminoides by two dimensional hydrophilic interaction liquid chromatography- reversed-phase liquid chromatography].

PubMed

Jia, Youmei; Cai, Jianfeng; Xin, Huaxia; Feng, Jiatao; Fu, Yanhui; Fu, Qing; Jin, Yu

2017-06-08

A preparative two dimensional hydrophilic interaction liquid chromatography/reversed-phase liquid chromatography (Pre-2D-HILIC/RPLC) method was established to separate and purify the components in Trachelospermum jasminoides . The pigments and strongly polar components were removed from the crude extract after the active carbon decolorization and solid phase extraction processes. A Click XIon column (250 mm×20 mm, 10 μm) was selected as stationary phase and water-acetonitrile as mobile phases in the first dimensional HILIC. Finally, 15 fractions were collected under UV-triggered mode. In the second dimensional RPLC, a C18 column (250 mm×20 mm, 5 μm) was selected and water-acetonitrile was used as mobile phases. As a result, 14 compounds with high purity were obtained, which were further identified by mass spectrometry (MS) and nuclear magnetic resonance (NMR). Finally, 11 lignan compounds and three flavonoid compounds were obtained. The method has a good orthogonality, and can improve the resolution and the peak capacity. It is significant for the separation of complex components from Trachelospermum jasminoides .

The effect of charged quantum dots on the mobility of a two-dimensional electron gas: How important is the Coulomb scattering?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurzmann, A., E-mail: annika.kurzmann@uni-due.de; Beckel, A.; Lorke, A.

2015-02-07

We have investigated the influence of a layer of charged self-assembled quantum dots (QDs) on the mobility of a nearby two-dimensional electron gas (2DEG). Time-resolved transconductance spectroscopy was used to separate the two contributions of the change in mobility, which are: (i) The electrons in the QDs act as Coulomb scatterers for the electrons in the 2DEG. (ii) The screening ability and, hence, the mobility of the 2DEG decreases when the charge carrier density is reduced by the charged QDs, i.e., the mobility itself depends on the charge carrier concentration. Surprisingly, we find a negligible influence of the Coulomb scatteringmore » on the mobility for a 2DEG, separated by a 30 nm tunneling barrier to the layer of QDs. This means that the mobility change is completely caused by depletion, i.e., reduction of the charge carrier density in the 2DEG, which indirectly influences the mobility.« less

High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Di-Cheng; Pan, You-Wei; Lin, Shih-Wei

2016-04-25

We demonstrate experimentally the two-terminal magnetic sensors exhibiting an extraordinary magneto-resistance effect by using an InGaAs quantum well channel with a metal-shunting structure. A high magneto-resistance of 17.3% and a sensitivity of 488.1 Ω/T have been obtained at 1 T and room temperature with our geometrical design. The two-contact configuration and the high-mobility electron transistor-compatible epitaxy structure make the devices promising for high-sensitivity magnetic sensing integration and applications.

Magnetic field induced strong valley polarization in the three-dimensional topological semimetal LaBi

NASA Astrophysics Data System (ADS)

Kumar, Nitesh; Shekhar, Chandra; Klotz, J.; Wosnitza, J.; Felser, Claudia

2017-10-01

LaBi is a three-dimensional rocksalt-type material with a surprisingly quasi-two-dimensional electronic structure. It exhibits excellent electronic properties such as the existence of nontrivial Dirac cones, extremely large magnetoresistance, and high charge-carrier mobility. The cigar-shaped electron valleys make the charge transport highly anisotropic when the magnetic field is varied from one crystallographic axis to another. We show that the electrons can be polarized effectively in these electron valleys under a rotating magnetic field. We achieved a polarization of 60% at 2 K despite the coexistence of three-dimensional hole pockets. The valley polarization in LaBi is compared to the sister compound LaSb where it is found to be smaller. The performance of LaBi is comparable to the highly efficient bismuth.

Prediction of a mobile two-dimensional electron gas at the LaSc O3 /BaSn O3 (001) interface

NASA Astrophysics Data System (ADS)

Paudel, Tula R.; Tsymbal, Evgeny Y.

2017-12-01

Two-dimensional electron gases (2DEG) at oxide interfaces, such as LaAl O3 /SrTi O3 (001), have aroused significant interest due to their high carrier density (˜1014c m-2 ) and strong lateral confinement (˜1 nm). However, these 2DEGs are normally hosted by the weakly dispersive and degenerate d bands (e.g., Ti -3 d bands), which are strongly coupled to the lattice, causing mobility of such 2DEGs to be relatively low at room temperature (˜1 c m2/Vs ). Here, we propose using oxide host materials with the conduction bands formed from s electrons to increase carrier mobility and soften its temperature dependence. Using first-principles density functional theory calculations, we investigate LaSc O3 /BaSn O3 (001) heterostructure and as a model system, where the conduction band hosts the s -like carriers. We find that the polar discontinuity at this interface leads to electronic reconstruction resulting in the formation of the 2DEG at this interface. The conduction electrons reside in the highly dispersive Sn -5 s bands, which have a large band width and a low effective mass. The predicted 2DEG is expected to be highly mobile even at room temperature due to the reduced electron-phonon scattering via the inter-band scattering channel. A qualitatively similar behavior is predicted for a doped BaSn O3 , where a monolayer of BaO is replaced with LaO. We anticipate that the quantum phenomena associated with these 2DEGs to be more pronounced owing to the high mobility of the carriers.

Two-Dimensional Optoelectronic Graphene Nanoprobes for Neural Nerwork

NASA Astrophysics Data System (ADS)

Hong, Tu; Kitko, Kristina; Wang, Rui; Zhang, Qi; Xu, Yaqiong

2014-03-01

Brain is the most complex network created by nature, with billions of neurons connected by trillions of synapses through sophisticated wiring patterns and countless modulatory mechanisms. Current methods to study the neuronal process, either by electrophysiology or optical imaging, have significant limitations on throughput and sensitivity. Here, we use graphene, a monolayer of carbon atoms, as a two-dimensional nanoprobe for neural network. Scanning photocurrent measurement is applied to detect the local integration of electrical and chemical signals in mammalian neurons. Such interface between nanoscale electronic device and biological system provides not only ultra-high sensitivity, but also sub-millisecond temporal resolution, owing to the high carrier mobility of graphene.

Recent progress in high-mobility thin-film transistors based on multilayer 2D materials

NASA Astrophysics Data System (ADS)

Hong, Young Ki; Liu, Na; Yin, Demin; Hong, Seongin; Kim, Dong Hak; Kim, Sunkook; Choi, Woong; Yoon, Youngki

2017-04-01

Two-dimensional (2D) layered semiconductors are emerging as promising candidates for next-generation thin-film electronics because of their high mobility, relatively large bandgap, low-power switching, and the availability of large-area growth methods. Thin-film transistors (TFTs) based on multilayer transition metal dichalcogenides or black phosphorus offer unique opportunities for next-generation electronic and optoelectronic devices. Here, we review recent progress in high-mobility transistors based on multilayer 2D semiconductors. We describe the theoretical background on characterizing methods of TFT performance and material properties, followed by their applications in flexible, transparent, and optoelectronic devices. Finally, we highlight some of the methods used in metal-semiconductor contacts, hybrid structures, heterostructures, and chemical doping to improve device performance.

PULSED AIR SPARGING IN AQUIFERS CONTAMINATED WITH DENSE NONAQUEOUS PHASE LIQUIDS

EPA Science Inventory

Air sparging was evaluated for remediation of tetrachloroethylene (PCE) present as dense nonaqueous phase liquid (DNAPL) in aquifers. A two-dimensional laboratory tank with a transparent front wall allowed for visual observation of DNAPL mobilization. A DNAPL zone 50 cm high was ...

Two-dimensional n -InSe/p -GeSe(SnS) van der Waals heterojunctions: High carrier mobility and broadband performance

NASA Astrophysics Data System (ADS)

Xia, Cong-xin; Du, Juan; Huang, Xiao-wei; Xiao, Wen-bo; Xiong, Wen-qi; Wang, Tian-xing; Wei, Zhong-ming; Jia, Yu; Shi, Jun-jie; Li, Jing-bo

2018-03-01

Recently, constructing van der Waals (vdW) heterojunctions by stacking different two-dimensional (2D) materials has been considered to be effective strategy to obtain the desired properties. Here, through first-principles calculations, we find theoretically that the 2D n -InSe/p -GeSe(SnS) vdW heterojunctions are the direct-band-gap semiconductor with typical type-II band alignment, facilitating the effective separation of photogenerated electron and hole pairs. Moreover, they possess the high optical absorption strength (˜105 ), broad spectrum width, and excellent carrier mobility (˜103c m2V-1s-1 ). Interestingly, under the influences of the interlayer coupling and external electric field, the characteristics of type-II band alignment is robust, while the band-gap values and band offset are tunable. These results indicate that 2D n -InSe/p -GeSe(SnS) heterojunctions possess excellent optoelectronic and transport properties, and thus can become good candidates for next-generation optoelectronic nanodevices.

Hydrodynamic interactions in freely suspended liquid crystal films

NASA Astrophysics Data System (ADS)

Kuriabova, Tatiana; Powers, Thomas R.; Qi, Zhiyuan; Goldfain, Aaron; Park, Cheol Soo; Glaser, Matthew A.; Maclennan, Joseph E.; Clark, Noel A.

2016-11-01

Hydrodynamic interactions play an important role in biological processes in cellular membranes, a large separation of length scales often allowing such membranes to be treated as continuous, two-dimensional (2D) fluids. We study experimentally and theoretically the hydrodynamic interaction of pairs of inclusions in two-dimensional, fluid smectic liquid crystal films suspended in air. Such smectic membranes are ideal systems for performing controlled experiments as they are mechanically stable, of highly uniform structure, and have well-defined, variable thickness, enabling experimental investigation of the crossover from 2D to 3D hydrodynamics. Our theoretical model generalizes the Levine-MacKintosh theory of point-force response functions and uses a boundary-element approach to calculate the mobility matrix for inclusions of finite extent. We describe in detail the theoretical and computational approach previously outlined in Z. Qi et al., Phys. Rev. Lett. 113, 128304 (2014), 10.1103/PhysRevLett.113.128304 and extend the method to study the mutual mobilities of inclusions with asymmetric shapes. The model predicts well the observed mutual mobilities of pairs of circular inclusions in films and the self-mobility of a circular inclusion in the vicinity of a linear boundary.

DIGE Analysis of Human Tissues.

PubMed

Gelfi, Cecilia; Capitanio, Daniele

2018-01-01

Two-dimensional difference gel electrophoresis (2-D DIGE) is an advanced and elegant gel electrophoretic analytical tool for comparative protein assessment. It is based on two-dimensional gel electrophoresis (2-DE) separation of fluorescently labeled protein extracts. The tagging procedures are designed to not interfere with the chemical properties of proteins with respect to their pI and electrophoretic mobility, once a proper labeling protocol is followed. The two-dye or three-dye systems can be adopted and their choice depends on specific applications. Furthermore, the use of an internal pooled standard makes 2-D DIGE a highly accurate quantitative method enabling multiple protein samples to be separated on the same two-dimensional gel. The image matching and cross-gel statistical analysis generates robust quantitative results making data validation by independent technologies successful.

Peak picking and the assessment of separation performance in two-dimensional high performance liquid chromatography.

PubMed

Stevenson, Paul G; Mnatsakanyan, Mariam; Guiochon, Georges; Shalliker, R Andrew

2010-07-01

An algorithm was developed for 2DHPLC that automated the process of peak recognition, measuring their retention times, and then subsequently plotting the information in a two-dimensional retention plane. Following the recognition of peaks, the software then performed a series of statistical assessments of the separation performance, measuring for example, correlation between dimensions, peak capacity and the percentage of usage of the separation space. Peak recognition was achieved by interpreting the first and second derivatives of each respective one-dimensional chromatogram to determine the 1D retention times of each solute and then compiling these retention times for each respective fraction 'cut'. Due to the nature of comprehensive 2DHPLC adjacent cut fractions may contain peaks common to more than one cut fraction. The algorithm determined which components were common in adjacent cuts and subsequently calculated the peak maximum profile by interpolating the space between adjacent peaks. This algorithm was applied to the analysis of a two-dimensional separation of an apple flesh extract separated in a first dimension comprising a cyano stationary phase and an aqueous/THF mobile phase as the first dimension and a second dimension comprising C18-Hydro with an aqueous/MeOH mobile phase. A total of 187 peaks were detected.

Magnetic field induced transition in superconducting LaTiO3/SrTiO3 interfaces

NASA Astrophysics Data System (ADS)

Biscaras, J.; Bergeal, N.; Hurand, S.; Feuillet-Palma, C.; Rastogi, A.; Budhani, R. C.; Grilli, M.; Caprara, S.; Lesueur, J.

2013-07-01

Superconductivity at the LaTiO3/SrTiO3 interface is studied by low temperature and high magnetic field measurements as a function of a back-gate voltage. We show that it is intimately related to the appearance of a low density (a few 1012 cm-2) of high mobility carriers, in addition to low mobility ones always present in the system. These carriers form superconducting puddles coupled by a metallic two-dimensional electron gas, as revealed by the analysis of the phase transition driven by a perpendicular magnetic field. Two critical fields are evidenced, and a quantitative comparison with a recent theoretical model is made.

Relevance feedback-based building recognition

NASA Astrophysics Data System (ADS)

Li, Jing; Allinson, Nigel M.

2010-07-01

Building recognition is a nontrivial task in computer vision research which can be utilized in robot localization, mobile navigation, etc. However, existing building recognition systems usually encounter the following two problems: 1) extracted low level features cannot reveal the true semantic concepts; and 2) they usually involve high dimensional data which require heavy computational costs and memory. Relevance feedback (RF), widely applied in multimedia information retrieval, is able to bridge the gap between the low level visual features and high level concepts; while dimensionality reduction methods can mitigate the high-dimensional problem. In this paper, we propose a building recognition scheme which integrates the RF and subspace learning algorithms. Experimental results undertaken on our own building database show that the newly proposed scheme appreciably enhances the recognition accuracy.

A Laterally-Mobile Mixed Polymer/Polyelectrolyte Brush Undergoes a Macroscopic Phase Separation

NASA Astrophysics Data System (ADS)

Lee, Hoyoung; Park, Hae-Woong; Tsouris, Vasilios; Choi, Je; Mustafa, Rafid; Lim, Yunho; Meron, Mati; Lin, Binhua; Won, You-Yeon

2013-03-01

We studied mixed PEO and PDMAEMA brushes. The question we attempted to answer was: When the chain grafting points are laterally mobile, how will this lateral mobility influence the structure and phase behavior of the mixed brush? Two different model mixed PEO/PDMAEMA brush systems were prepared: a mobile mixed brush by spreading a mixture of two diblock copolymers, PEO-PnBA and PDMAEMA-PnBA, onto the air-water interface, and an inseparable mixed brush using a PEO-PnBA-PDMAEMA triblock copolymer having respective brush molecular weights matched to those of the diblock copolymers. These two systems were investigated by surface pressure-area isotherm, X-ray reflectivity and AFM imaging measurements. The results suggest that the mobile mixed brush undergoes a lateral macroscopic phase separation at high chain grafting densities, whereas the inseparable system is only microscopically phase separated under comparable brush density conditions. We also conducted an SCF analysis of the phase behavior of the mixed brush system. This analysis further supported the experimental findings. The macroscopic phase separation observed in the mobile system is in contrast to the microphase separation behavior commonly observed in two-dimensional laterally-mobile small molecule mixtures.

Mechanical flip-chip for ultra-high electron mobility devices

DOE PAGES

Bennaceur, Keyan; Schmidt, Benjamin A.; Gaucher, Samuel; ...

2015-09-22

In this study, electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. Thismore » approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility.« less

Growth of low disorder GaAs/AlGaAs heterostructures by molecular beam epitaxy for the study of correlated electron phases in two dimensions

NASA Astrophysics Data System (ADS)

Watson, John D.

The unparalleled quality of GaAs/AlGaAs heterostructures grown by molecular beam epitaxy has enabled a wide range of experiments probing interaction effects in two-dimensional electron and hole gases. This dissertation presents work aimed at further understanding the key material-related issues currently limiting the quality of these 2D systems, particularly in relation to the fractional quantum Hall effect in the 2nd Landau level and spin-based implementations of quantum computation. The manuscript begins with a theoretical introduction to the quantum Hall effect which outlines the experimental conditions necessary to study the physics of interest and motivates the use of the semiconductor growth and cryogenic measurement techniques outlined in chapters 2 and 3, respectively. In addition to a generic introduction to the molecular beam epitaxy growth technique, chapter 2 summarizes some of what was learned about the material purity issues currently limiting the low temperature electron mobility. Finally, a series of appendices are included which detail the experimental methods used over the course of the research. Chapter 4 presents an experiment examining transport in a low density two-dimensional hole system in which the hole density could be varied by means of an evaporated back gate. At low temperature, the mobility reached a maximum of 2.6 x 106 cm2/Vs at a density of 6.2 x 1010 cm-2 which is the highest reported mobility in a two-dimensional hole system to date. In addition, it was found that the mobility as a function of density did not follow a power law with a single exponent. Instead, it was found that the power law varied with density, indicating a cross-over between dominant scattering mechanisms at low density and high density. At low density the mobility was found to be limited by remote ionized impurity scattering, while at high density the dominant scattering mechanism was found to be background impurity scattering. Chapter 5 details an experiment examining transport in a series of two-dimensional hole gases in which the dopant setback distance and the Al mole fraction in the barriers of the quantum well were varied. The hole density was tuned in this way from 0.18 -- 1.9 x 1011 cm-2. Surprisingly, the mobility at T = 0.3 K was found to peak at 2.3 x 10 6 cm-2 at an intermediate density of 6.5 x 10 10 cm-2. Self-consistent Schrodinger/Poisson calculations were performed for each wafer to examine the scattering rates due to a variety of potentials at low temperature. The drop in mobility at high density could be accounted for with the inclusion of interface roughness scattering, but using the same interface roughness scattering parameters for similar two-dimensional electron gases produced inconsistent results. This leaves open the possibility of contributions from other scattering mechanisms in the hole samples at high density. Chapter 6 presents an in-depth study of in-situ backgated two-dimensional gases used for studying the fragile fractional quantum Hall states in the 2nd Landau level. It was found that leakage currents as small as 4 pA could cause noticeable heating of the electron gas if the lattice was not properly thermally anchored to the cryostat. However, it was also found that when the heterostructure design and device fabrication recipe were properly optimized, gate voltages as large as 4 V could be applied before the leakage turned on, allowing the density to be tuned from full depletion to over 4 x 1011 cm-2. As a result, heating effects at dilution refrigerator temperatures were negligible and the gap at nu = 5/2 could be tuned continuously with density to a maximum value of 625 mK, the largest reported to date. An unusual evolution of the reentrant integer quantum Hall states as a function of density is also reported. Such devices should prove useful for the study of electron correlations in nanostructures in the 2nd Landau level.

Direct visualization of in vitro drug mobilization from Lescol XL tablets using two-dimensional (19)F and (1)H magnetic resonance imaging.

PubMed

Chen, Chen; Gladden, Lynn F; Mantle, Michael D

2014-02-03

This article reports the application of in vitro multinuclear ((19)F and (1)H) two-dimensional magnetic resonance imaging (MRI) to study both dissolution media ingress and drug egress from a commercial Lescol XL extended release tablet in a United States Pharmacopeia Type IV (USP-IV) dissolution cell under pharmacopoeial conditions. Noninvasive spatial maps of tablet swelling and dissolution, as well as the mobilization and distribution of the drug are quantified and visualized. Two-dimensional active pharmaceutical ingredient (API) mobilization and distribution maps were obtained via (19)F MRI. (19)F API maps were coregistered with (1)H T2-relaxation time maps enabling the simultaneous visualization of drug distribution and gel layer dynamics within the swollen tablet. The behavior of the MRI data is also discussed in terms of its relationship to the UV drug release behavior.

Phonon-limited carrier mobility and resistivity from carbon nanotubes to graphene

NASA Astrophysics Data System (ADS)

Li, Jing; Miranda, Henrique Pereira Coutada; Niquet, Yann-Michel; Genovese, Luigi; Duchemin, Ivan; Wirtz, Ludger; Delerue, Christophe

2015-08-01

Under which conditions do the electrical transport properties of one-dimensional (1D) carbon nanotubes (CNTs) and 2D graphene become equivalent? We have performed atomistic calculations of the phonon-limited electrical mobility in graphene and in a wide range of CNTs of different types to address this issue. The theoretical study is based on a tight-binding method and a force-constant model from which all possible electron-phonon couplings are computed. The electrical resistivity of graphene is found in very good agreement with experiments performed at high carrier density. A common methodology is applied to study the transition from one to two dimensions by considering CNTs with diameter up to 16 nm. It is found that the mobility in CNTs of increasing diameter converges to the same value, i.e., the mobility in graphene. This convergence is much faster at high temperature and high carrier density. For small-diameter CNTs, the mobility depends strongly on chirality, diameter, and the existence of a band gap.

Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bajaj, Sanyam, E-mail: bajaj.10@osu.edu; Hung, Ting-Hsiang; Akyol, Fatih

2014-12-29

We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed two-dimensional (2D) simulations show that threshold voltages in excess of 3 V can be achieved through the use of AlGaN channel layers. We also calculate the 2D electron gas mobility in AlGaN channel HEMTs and evaluate their power figures of merit as a function of device operating temperature and Al mole fraction in the channel. Our models show that power switching transistors with AlGaN channels would have comparable on-resistance to GaN-channel based transistors for the samemore » operation voltage. The modeling in this paper shows the potential of high composition AlGaN as a channel material for future high threshold enhancement mode transistors.« less

Theoretical study of the two-dimensional electron mobility in strained III-nitride heterostructures

NASA Astrophysics Data System (ADS)

Yu, Tsung-Hsing; Brennan, Kevin F.

2001-04-01

We present calculations of the two-dimensional (2D) electron mobility in III-nitride heterojunction structures in the presence of spontaneous and piezoelectrically induced polarization effects. The calculations are made using a self-consistent solution of the Schrödinger, Poisson, charge and potential balance equations. It is found that the polarization fields act to significantly increase the 2D sheet charge concentration while reducing the mobility. The mobility reduction results from the enhanced band bending and subsequent attraction of the electrons to the heterointerface where they experience increased surface roughness scattering. Good agreement is obtained between the theoretical calculations and experimental measurements over the full temperature range examined. Comparison of the mobility in InGaN/GaN to AlGaN/GaN heterostructures is made. It is found that the mobility is significantly higher in the InGaN/GaN structure than in the AlGaN/GaN structure.

Simulation of Molecular Transport in Systems Containing Mobile Obstacles.

PubMed

Polanowski, Piotr; Sikorski, Andrzej

2016-08-04

In this paper, we investigate the movement of molecules in crowded environments with obstacles undergoing Brownian motion by means of extensive Monte Carlo simulations. Our investigations were performed using the dynamic lattice liquid model, which was based on the cooperative movement concept and allowed to mimic systems at high densities where the motion of all elements (obstacles as well as moving particles) were highly correlated. The crowded environments are modeled on a two-dimensional triangular lattice containing obstacles (particles whose mobility was significantly reduced) moving by a Brownian motion. The subdiffusive motion of both elements in the system was analyzed. It was shown that the percolation transition does not exist in such systems in spite of the cooperative character of the particles' motion. The reduction of the obstacle mobility leads to the longer caging of liquid particles by mobile obstacles.

Crossover of Equilibrium and Nonequilibrium Carrier Density in Germanium Two-Dimensional Hole Gases

NASA Astrophysics Data System (ADS)

Su, Yi-Hsin; Chuang, Yen; Chiu, Po-Yuan; Hsu, Nai-Wen; Lu, Tzu-Ming; Li, Jiun-Yun

We performed a detailed study on the enhancement-mode two-dimensional hole gases (2DHGs) in the Ge/Ge1-xSix (0.15

Electron mobility of two-dimensional electron gas in InGaN heterostructures: Effects of alloy disorder and random dipole scatterings

NASA Astrophysics Data System (ADS)

Hoshino, Tomoki; Mori, Nobuya

2018-04-01

InGaN has a smaller electron effective mass and is expected to be used as a channel material for high-electron-mobility transistors. However, it is an alloy semiconductor with a random distribution of atoms, which introduces additional scattering mechanisms: alloy disorder and random dipole scatterings. In this work, we calculate the electron mobility in InGaN- and GaN-channel high-electron-mobility transistors (HEMTs) while taking into account acoustic deformation potential, polar optical phonon, alloy disorder, and random dipole scatterings. For InGaN-channel HEMTs, we find that not only alloy disorder but also random dipole scattering has a strong impact on the electron mobility and it significantly decreases as the In mole fraction of the channel increases. Our calculation also shows that the channel thickness w dependence of the mobility is rather weak when w > 1 nm for In0.1Ga0.9N-channel HEMTs.

Current crowding mediated large contact noise in graphene field-effect transistors

PubMed Central

Karnatak, Paritosh; Sai, T. Phanindra; Goswami, Srijit; Ghatak, Subhamoy; Kaushal, Sanjeev; Ghosh, Arindam

2016-01-01

The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene–metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field-effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000 cm2 V−1 s−1. Our phenomenological model for contact noise because of current crowding in purely two-dimensional conductors confirms that the contacts dominate the measured resistance noise in all graphene field-effect transistors in the two-probe or invasive four-probe configurations, and surprisingly, also in nearly noninvasive four-probe (Hall bar) configuration in the high-mobility devices. The microscopic origin of contact noise is directly linked to the fluctuating electrostatic environment of the metal–channel interface, which could be generic to two-dimensional material-based electronic devices. PMID:27929087

Large contact noise in graphene field-effect transistors

NASA Astrophysics Data System (ADS)

Karnatak, Paritosh; Sai, Phanindra; Goswami, Srijit; Ghatak, Subhamoy; Kaushal, Sanjeev; Ghosh, Arindam

Fluctuations in the electrical resistance at the interface of atomically thin materials and metals, or the contact noise, can adversely affect the device performance but remains largely unexplored. We have investigated contact noise in graphene field effect transistors of varying device geometry and contact configuration, with channel carrier mobility ranging from 5,000 to 80,000 cm2V-1s-1. A phenomenological model developed for contact noise due to current crowding for two dimensional conductors, shows a dominant contact contribution to the measured resistance noise in all graphene field effect transistors when measured in the two-probe or invasive four probe configurations, and surprisingly, also in nearly noninvasive four probe (Hall bar) configuration in the high mobility devices. We identify the fluctuating electrostatic environment of the metal-channel interface as the major source of contact noise, which could be generic to two dimensional material-based electronic devices. The work was financially supported by the Department of Science and Technology, India and Tokyo Electron Limited.

Current crowding mediated large contact noise in graphene field-effect transistors

NASA Astrophysics Data System (ADS)

Karnatak, Paritosh; Sai, T. Phanindra; Goswami, Srijit; Ghatak, Subhamoy; Kaushal, Sanjeev; Ghosh, Arindam

2016-12-01

The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field-effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000 cm2 V-1 s-1. Our phenomenological model for contact noise because of current crowding in purely two-dimensional conductors confirms that the contacts dominate the measured resistance noise in all graphene field-effect transistors in the two-probe or invasive four-probe configurations, and surprisingly, also in nearly noninvasive four-probe (Hall bar) configuration in the high-mobility devices. The microscopic origin of contact noise is directly linked to the fluctuating electrostatic environment of the metal-channel interface, which could be generic to two-dimensional material-based electronic devices.

Visualization of surfactant enhanced NAPL mobilization and solubilization in a two-dimensional micromodel

DOE Office of Scientific and Technical Information (OSTI.GOV)

ZHONG,LIRONG; MAYER,ALEX; GLASS JR.,ROBERT J.

Surfactant-enhanced aquifer remediation is an emerging technology for aquifers contaminated with nonaqueous phase liquids (NAPLs). A two-dimensional micromodel and image capture system were applied to observe NAPL mobilization and solubilization phenomena. In each experiment, a common residual NAPL field was established, followed by a series of mobilization and solubilization experiments. Mobilization floods included pure water floods with variable flow rates and surfactant floods with variations in surfactant formulations. At relatively low capillary numbers (N{sub ca}<10{sup {minus}3}), the surfactant mobilization floods resulted in higher NAPL saturations than for the pure water flood, for similar N{sub ca}.These differences in macroscopic saturations aremore » explained by differences in micro-scale mobilization processes. Solubilization of the residual NAPL remaining after the mobilization stage was dominated by the formation of dissolution fingers, which produced nonequilibrium NAPL solubilization. A macroemulsion phase also as observed to form spontaneously and persist during the solubilization stage of the experiments.« less

Two dimensional electron systems for solid state quantum computation

NASA Astrophysics Data System (ADS)

Mondal, Sumit

Two dimensional electron systems based on GaAs/AlGaAs heterostructures are extremely useful in various scientific investigations of recent times including the search for quantum computational schemes. Although significant strides have been made over the past few years to realize solid state qubits on GaAs/AlGaAs 2DEGs, there are numerous factors limiting the progress. We attempt to identify factors that have material and design-specific origin and develop ways to overcome them. The thesis is divided in two broad segments. In the first segment we describe the realization of a new field-effect induced two dimensional electron system on GaAs/AlGaAs heterostructure where the novel device-design is expected to suppress the level of charge noise present in the device. Modulation-doped GaAs/AlGaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric field-induced carrier systems offer an attractive alternative if certain challenges can be overcome. We demonstrate a field-effect transistor in which the active channel is locally devoid of modulation-doping, but silicon dopant atoms are retained in the ohmic contact region to facilitate low-resistance contacts. A high quality two-dimensional electron gas is induced by a field-effect that is tunable over a density range of 6.5x10 10cm-2 to 2.6x1011cm-2 . Device design, fabrication, and low temperature (T=0.3K) characterization results are discussed. The demonstrated device-design overcomes several existing limitations in the fabrication of field-induced 2DEGs and might find utility in hosting nanostructures required for making spin qubits. The second broad segment describes our effort to correlate transport parameters measured at T=0.3K to the strength of the fractional quantum Hall state observed at nu=5/2 in the second Landau level of high-mobility GaAs/AlGaAs two dimensional electron systems. In an ultrapure two dimensional electron system (2DES) subjected to high magnetic field and very low temperatures, a large number of many-body ground states can emerge in a purely quantum phenomenon called the Fractional quantum Hall Effect (FQHE). The fractional state at nu=5/2 has drawn significant interest in recent times because of its predicted non-abelian excitations that can be utilized in constructing topologically protected quantum bits. In spite of having made significant advances in this direction, progress is hindered due to the fragility of this exotic state characterized by a small energy gap which puts very stringent requirements on the sample quality and the temperature scale. It is believed that the nu=5/2 activation gap is masked by disorders present in the sample which causes the experimentally observed gap to appear much smaller than the theoretically predicted intrinsic gap originating from purely electron-electron interactions in the clean-limit. Hence categorization of samples based on the strength of the nu=5/2 state hinges on the efficient quantification of disorder which is not a directly measurable quantity. Historically the zero-field transport mobility has been identified as the measure of disorder present in the sample. However careful comparison of data originating in our measurements with existing literature reveals that mobility is rather a weak indicator of the quality of FQHE in the 2nd Landau level and fails to reliably predict the nu=5/2 activation gap in a sample. In the absence of a single reliable indicator of sample quality in the 2nd Landau level, we propose a resistivity measured at nu=5/2 at T=0.3K as an alternative metric to characterize samples. Preliminary measurements involving a limited number of samples indicate that a resistivity measured at nu=5/2 might be better correlated with the nu=5/2 gap than mobility. Results also call for a more holistic approach in sample characterization by taking into consideration the heterostructure design while predicting sample quality. The possibility of quantum scattering time being an indicator of the strength of the nu=5/2 gap was investigated. The existing method of extracting quantum lifetime from the low-field Shubnikov-de Haas oscillations leads to unreliable extraction of quantum lifetime in high-mobility two dimensional electron samples potentially because an underlying assumption in the method that the amplitude of the density of states oscillations at low magnetic fields is negligible compared to the zero-field density of states might not hold true in case of high-mobility 2DES. A modified method was developed by relaxing the assumption which resulted in meaningful extraction of quantum lifetimes in all the high-mobility samples probed in the study. A correlation between the extracted quantum lifetime and the nu=5/2 activation gap was not discovered within the limited set of samples probed.

Local 2D-2D tunneling in high mobility electron systems

NASA Astrophysics Data System (ADS)

Pelliccione, Matthew; Sciambi, Adam; Bartel, John; Goldhaber-Gordon, David; Pfeiffer, Loren; West, Ken; Lilly, Michael; Bank, Seth; Gossard, Arthur

2012-02-01

Many scanning probe techniques have been utilized in recent years to measure local properties of high mobility two-dimensional (2D) electron systems in GaAs. However, most techniques lack the ability to tunnel into the buried 2D system and measure local spectroscopic information. We report scanning gate measurements on a bilayer GaAs/AlGaAs heterostructure that allows for a local modulation of tunneling between two 2D electron layers. We call this technique Virtual Scanning Tunneling Microscopy (VSTM) [1,2] as the influence of the scanning gate is analogous to an STM tip, except at a GaAs/AlGaAs interface instead of a surface. We will discuss the spectroscopic capabilities of the technique, and show preliminary results of measurements on a high mobility 2D electron system.[1] A. Sciambi, M. Pelliccione et al., Appl. Phys. Lett. 97, 132103 (2010).[2] A. Sciambi, M. Pelliccione et al., Phys. Rev. B 84, 085301 (2011).

Mechanism of high-fluence proton induced electrical degradation in AlGaN/GaN high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Lei, Zhifeng; Guo, Hongxia; Tang, Minghua; Peng, Chao; Zhang, Zhangang; Huang, Yun; En, Yunfei

2018-07-01

The effects of displacement damage induced by 3 and 6 MeV protons in AlGaN/GaN high-electron-mobility transistors (HEMTs) are investigated. For the 6 MeV protons at a dose of 5 × 1014 cm‑2, a 12% decrease in saturation current, a 3.8% decrease in the peak transconductance, a 0.3 V positive shift of the threshold voltage, and a three-to fourfold decrease in reverse gate leakage current are observed compared with the pre-irradiation values. The main degradation mechanism is considered to be the generation of deep trap states in the band gap, which remove electrons and reduce the carrier mobility in a two-dimensional electron gas (2DEG). Both the carrier removal rate and negatively charged trap density can be extracted, which shows that about 3500 proton injections lead to one carrier removal. Proton fluence and energy are found to be two key parameters that affect the degradation characteristics of irradiated GaN HEMTs.

High Electron Mobility in SiGe/Si n-MODFET Structures on Sapphire Substrates

NASA Technical Reports Server (NTRS)

Mueller, Carl H.; Croke, Edward T.; Alterovitz, Samuel A.

2003-01-01

For the first time, SiGe/Si n-Modulation Doped Field Effect Transistors (n-MODFET) structures have been grown on sapphire substrates. Room temperature electron mobility value of 1271 square centimeters N-sec at an electron carrier density (n(sub e) = 1.33x10(exp 12) per square centimeter)) of 1.6 x 10(exp 12) per square centimeter was obtained. At 250 mK, the mobility increases to 13,313 square centimeters/V-sec (n(sub e)=1.33x10(exp 12) per square centimeter)) and Shubnikov-de Haas oscillations appear, showing excellent confinement of the two-dimensional electron gas.

Debris-flow mobilization from landslides

USGS Publications Warehouse

Iverson, R.M.; Reid, M.E.; LaHusen, R.G.

1997-01-01

Field observations, laboratory experiments, and theoretical analyses indicate that landslides mobilize to form debris flows by three processes: (a) widespread Coulomb failure within a sloping soil, rock, or sediment mass, (b) partial or complete liquefaction of the mass by high pore-fluid pressures, and (c) conversion of landslide translational energy to internal vibrational energy (i.e. granular temperature). These processes can operate independently, but in many circumstances they appear to operate simultaneously and synergistically. Early work on debris-flow mobilization described a similar interplay of processes but relied on mechanical models in which debris behavior was assumed to be fixed and governed by a Bingham or Bagnold rheology. In contrast, this review emphasizes models in which debris behavior evolves in response to changing pore pressures and granular temperatures. One-dimensional infinite-slope models provide insight by quantifying how pore pressures and granular temperatures can influence the transition from Coulomb failure to liquefaction. Analyses of multidimensional experiments reveal complications ignored in one-dimensional models and demonstrate that debris-flow mobilization may occur by at least two distinct modes in the field.

Application of a trap-free two-dimensional liquid chromatography combined with ion trap/time-of-flight mass spectrometry for separation and characterization of impurities and isomers in cefpiramide.

PubMed

Wang, Jian; Xu, Yu; Wen, Chunmei; Wang, Zhijian

2017-11-01

High-resolution mass spectrometry had been routinely used for structure identification of impurity. However, all LC-MS methods were based on a volatile mobile phase, and a non-volatile system is used in the official analytical method of United States Pharmacopoeia for cefpiramide which limited the use of mass spectrometry for structure characterization of the impurities. Here we presented the utilization of a trap-free two-dimensional liquid chromatography coupled to high resolution ion trap/time-of-flight mass spectrometry (2D LC-IT-TOF MS) with positive and negative modes of electrospray ionization for characterization of eight impurities in cefpiramide. Trap-free two-dimensional liquid chromatography and online desalting technique made it possible to characterize the impurity in cefpiramide in the condition of official standard, and the TIC chromatogram of LC-MS was in conformity with the LC chromatogram of the official analytical method in the peak sequence of impurities, which could further improve the method of official monographs in pharmacopoeias. Each peak separated by the non-volatile mobile phase was trapped by a 20 μL quantitative loop then transferred into a system with a volatile mobile phase connected to a MS detector. In the first dimension, the column was Kromasil C 8 analytical column (250 mm × 4.6 mm, 5 μm) with a non-volatile salt mobile phase at the flow rate of 0.8 mL min -1 . In the second dimension, the column was Shimadzu Shim-pack GISS C 18 (50 mm × 2.1 mm, 1.9 μm) with a volatile salt mobile phase at the flow rate of 0.3 mL min -1 . Through the multiple heart-cutting 2D-LC approach and online desalting technique, the problem of incompatibility between non-volatile salt mobile phase and mass spectrometry was solved completely. The fragmentation behavior of cefpiramide and its eight impurities were studied. The structures of eight impurities in cefpiramide drug substance were deduced based on the HPLC-MS n data, in which seven impurities were novel impurities. The forming mechanisms of degradation products in cefpiramide were also studied. Copyright © 2017 Elsevier B.V. All rights reserved.

Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Hsu, Chih-Wei; Forsberg, Urban

2015-02-28

Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H{sub 2} atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ∼2000 cm{sup 2}/V·s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon andmore » oxygen concentrations were found up to ∼1 × 10{sup 20 }cm{sup −3} at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm{sup 2} SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer.« less

Electrical detection of spin transport in Si two-dimensional electron gas systems

NASA Astrophysics Data System (ADS)

Chang, Li-Te; Fischer, Inga Anita; Tang, Jianshi; Wang, Chiu-Yen; Yu, Guoqiang; Fan, Yabin; Murata, Koichi; Nie, Tianxiao; Oehme, Michael; Schulze, Jörg; Wang, Kang L.

2016-09-01

Spin transport in a semiconductor-based two-dimensional electron gas (2DEG) system has been attractive in spintronics for more than ten years. The inherent advantages of high-mobility channel and enhanced spin-orbital interaction promise a long spin diffusion length and efficient spin manipulation, which are essential for the application of spintronics devices. However, the difficulty of making high-quality ferromagnetic (FM) contacts to the buried 2DEG channel in the heterostructure systems limits the potential developments in functional devices. In this paper, we experimentally demonstrate electrical detection of spin transport in a high-mobility 2DEG system using FM Mn-germanosilicide (Mn(Si0.7Ge0.3)x) end contacts, which is the first report of spin injection and detection in a 2DEG confined in a Si/SiGe modulation doped quantum well structure (MODQW). The extracted spin diffusion length and lifetime are l sf = 4.5 μm and {τ }{{s}}=16 {{ns}} at 1.9 K respectively. Our results provide a promising approach for spin injection into 2DEG system in the Si-based MODQW, which may lead to innovative spintronic applications such as spin-based transistor, logic, and memory devices.

Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

NASA Astrophysics Data System (ADS)

Wong, Man Hoi; Pei, Yi; Palacios, Tomás; Shen, Likun; Chakraborty, Arpan; McCarthy, Lee S.; Keller, Stacia; DenBaars, Steven P.; Speck, James S.; Mishra, Umesh K.

2007-12-01

Nonalloyed Ohmic contacts on Ga-face n+-GaN/AlGaN/GaN high electron mobility transistor (HEMT) structures typically have significant contact resistance to the two-dimensional electron gas (2DEG) due to the AlGaN barrier. By growing the HEMT structure inverted on the N-face, electrons from the contacts were able to access the 2DEG without going through an AlGaN layer. A low contact resistance of 0.16Ωmm and specific contact resistivity of 5.5×10-7Ωcm2 were achieved without contact annealing on the inverted HEMT structure.

Frequency quenching of microwave-induced resistance oscillations in a high-mobility two-dimensional electron gas

NASA Astrophysics Data System (ADS)

Studenikin, S. A.; Sachrajda, A. S.; Gupta, J. A.; Wasilewski, Z. R.; Fedorych, O. M.; Byszewski, M.; Maude, D. K.; Potemski, M.; Hilke, M.; West, K. W.; Pfeiffer, L. N.

2007-10-01

The frequency dependence of microwave-induced resistance oscillations (MIROs) has been studied experimentally in high-mobility electron GaAs/AlGaAs structures to explore the limits at which these oscillations can be observed. It is found that in dc transport experiments at frequencies above 120GHz , MIROs start to quench, while above 230GHz , they completely disappear. The results will need to be understood theoretically but are qualitatively discussed within a model in which forced electronic charge oscillations (plasmons) play an intermediate role in the interaction process between the radiation and the single-particle electron excitations between Landau levels.

[Identification of impurity peaks in the HPLC chromatogram by LC-MS and two-dimensional chromatographic correlation spectroscopy].

PubMed

Chen, Zhen-Zhen; Zhang, Dou-Sheng; Wang, Nan; Feng, Fang; Hu, Chang-Qin

2012-04-01

A novel qualitative analytical method by using two-dimensional chromatographic correlation spectroscopy techniques for recognizing impurity peaks of HPLC methods of quality control and LC-MS chromatographic system was established. The structures of major degradation products of ceftizoxime and cefdinir were identified by LC-MS and MassWorks application; the standard chromatographic and spectral data of the degradation impurities were obtained by high-performance liquid chromatography with diode array detection. The impurity peaks of two-dimensional chromatography were matched by comparison of spectra and calculating correlation coefficients. Peaks in chromatography can be identified accurately and rapidly in different chromatographic systems such as column and mobile phase changed. The method provides a new way and thought to identify the peaks in quality control of impurities without reference impurity substances.

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morrison, C., E-mail: c.morrison.2@warwick.ac.uk; Casteleiro, C.; Leadley, D. R.

The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour,more » analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.« less

Superradiant Decay of Cyclotron Resonance of Two-Dimensional Electron Gases

NASA Astrophysics Data System (ADS)

Zhang, Qi; Arikawa, Takashi; Kato, Eiji; Reno, John L.; Pan, Wei; Watson, John D.; Manfra, Michael J.; Zudov, Michael A.; Tokman, Mikhail; Erukhimova, Maria; Belyanin, Alexey; Kono, Junichiro

2014-07-01

We report on the observation of collective radiative decay, or superradiance, of cyclotron resonance (CR) in high-mobility two-dimensional electron gases in GaAs quantum wells using time-domain terahertz magnetospectroscopy. The decay rate of coherent CR oscillations increases linearly with the electron density in a wide range, which is a hallmark of superradiant damping. Our fully quantum mechanical theory provides a universal formula for the decay rate, which reproduces our experimental data without any adjustable parameter. These results firmly establish the many-body nature of CR decoherence in this system, despite the fact that the CR frequency is immune to electron-electron interactions due to Kohn's theorem.

Atom chips with free-standing two-dimensional electron gases: advantages and challenges

NASA Astrophysics Data System (ADS)

Sinuco-León, G. A.; Krüger, P.; Fromhold, T. M.

2018-03-01

In this work, we consider the advantages and challenges of using free-standing two-dimensional electron gases (2DEG) as active components in atom chips for manipulating ultracold ensembles of alkali atoms. We calculate trapping parameters achievable with typical high-mobility 2DEGs in an atom chip configuration and identify advantages of this system for trapping atoms at sub-micron distances from the atom chip. We show how the sensitivity of atomic gases to magnetic field inhomogeneity can be exploited for controlling the atoms with quantum electronic devices and, conversely, using the atoms to probe the structural and transport properties of semiconductor devices.

Ferroelectricity in Covalently functionalized Two-dimensional Materials: Integration of High-mobility Semiconductors and Nonvolatile Memory.

PubMed

Wu, Menghao; Dong, Shuai; Yao, Kailun; Liu, Junming; Zeng, Xiao Cheng

2016-11-09

Realization of ferroelectric semiconductors by conjoining ferroelectricity with semiconductors remains a challenging task because most present-day ferroelectric materials are unsuitable for such a combination due to their wide bandgaps. Herein, we show first-principles evidence toward the realization of a new class of two-dimensional (2D) ferroelectric semiconductors through covalent functionalization of many prevailing 2D materials. Members in this new class of 2D ferroelectric semiconductors include covalently functionalized germanene, and stanene (Nat. Commun. 2014, 5, 3389), as well as MoS 2 monolayer (Nat. Chem. 2015, 7, 45), covalent functionalization of the surface of bulk semiconductors such as silicon (111) (J. Phys. Chem. B 2006, 110 , 23898), and the substrates of oxides such as silica with self-assembly monolayers (Nano Lett. 2014, 14, 1354). The newly predicted 2D ferroelectric semiconductors possess high mobility, modest bandgaps, and distinct ferroelectricity that can be exploited for developing various heterostructural devices with desired functionalities. For example, we propose applications of the 2D materials as 2D ferroelectric field-effect transistors with ultrahigh on/off ratio, topological transistors with Dirac Fermions switchable between holes and electrons, ferroelectric junctions with ultrahigh electro-resistance, and multiferroic junctions for controlling spin by electric fields. All these heterostructural devices take advantage of the combination of high-mobility semiconductors with fast writing and nondestructive reading capability of nonvolatile memory, thereby holding great potential for the development of future multifunctional devices.

Highly Mobile Two-Dimensional Electron Gases with a Strong Gating Effect at the Amorphous LaAlO3/KTaO3 Interface.

PubMed

Zhang, Hui; Zhang, Hongrui; Yan, Xi; Zhang, Xuejing; Zhang, Qinghua; Zhang, Jing; Han, Furong; Gu, Lin; Liu, Banggui; Chen, Yuansha; Shen, Baogen; Sun, Jirong

2017-10-18

Two-dimensional electron gas (2DEG) at the perovskite oxide interface exhibits a lot of exotic properties, presenting a promising platform for the exploration of emergent phenomena. While most of the previous works focused on SrTiO 3 -based 2DEG, here we report on the fabrication of high-quality 2DEGs by growing an amorphous LaAlO 3 layer on a (001)-orientated KTaO 3 substrate, which is a 5d metal oxide with a polar surface, at a high temperature that is usually adopted for crystalline LaAlO 3 . Metallic 2DEGs with a Hall mobility as high as ∼2150 cm 2 /(V s) and a sheet carrier density as low as 2 × 10 12 cm -2 are obtained. For the first time, the gating effect on the transport process is studied, and its influence on spin relaxation and inelastic and elastic scattering is determined. Remarkably, the spin relaxation time can be strongly tuned by a back gate. It is reduced by a factor of ∼69 while the gate voltage is swept from -25 to +100 V. The mechanism that dominates the spin relaxation is elucidated.

Dynamic heterogeneities and non-Gaussian behavior in two-dimensional randomly confined colloidal fluids

NASA Astrophysics Data System (ADS)

Schnyder, Simon K.; Skinner, Thomas O. E.; Thorneywork, Alice L.; Aarts, Dirk G. A. L.; Horbach, Jürgen; Dullens, Roel P. A.

2017-03-01

A binary mixture of superparamagnetic colloidal particles is confined between glass plates such that the large particles become fixed and provide a two-dimensional disordered matrix for the still mobile small particles, which form a fluid. By varying fluid and matrix area fractions and tuning the interactions between the superparamagnetic particles via an external magnetic field, different regions of the state diagram are explored. The mobile particles exhibit delocalized dynamics at small matrix area fractions and localized motion at high matrix area fractions, and the localization transition is rounded by the soft interactions [T. O. E. Skinner et al., Phys. Rev. Lett. 111, 128301 (2013), 10.1103/PhysRevLett.111.128301]. Expanding on previous work, we find the dynamics of the tracers to be strongly heterogeneous and show that molecular dynamics simulations of an ideal gas confined in a fixed matrix exhibit similar behavior. The simulations show how these soft interactions make the dynamics more heterogeneous compared to the disordered Lorentz gas and lead to strong non-Gaussian fluctuations.

Comprehensive lipidomic analysis of human plasma using multidimensional liquid- and gas-phase separations: Two-dimensional liquid chromatography-mass spectrometry vs. liquid chromatography-trapped-ion-mobility-mass spectrometry.

PubMed

Baglai, Anna; Gargano, Andrea F G; Jordens, Jan; Mengerink, Ynze; Honing, Maarten; van der Wal, Sjoerd; Schoenmakers, Peter J

2017-12-29

Recent advancements in separation science have resulted in the commercialization of multidimensional separation systems that provide higher peak capacities and, hence, enable a more-detailed characterization of complex mixtures. In particular, two powerful analytical tools are increasingly used by analytical scientists, namely online comprehensive two-dimensional liquid chromatography (LC×LC, having a second-dimension separation in the liquid phase) and liquid chromatography-ion mobility-spectrometry (LC-IMS, second dimension separation in the gas phase). The goal of the current study was a general assessment of the liquid-chromatography-trapped-ion-mobility-mass spectrometry (LC-TIMS-MS) and comprehensive two-dimensional liquid chromatography-mass spectrometry (LC×LC-MS) platforms for untargeted lipid mapping in human plasma. For the first time trapped-ion-mobility spectrometry (TIMS) was employed for the separation of the major lipid classes and ion-mobility-derived collision-cross-section values were determined for a number of lipid standards. The general effects of a number of influencing parameters have been inspected and possible directions for improvements are discussed. We aimed to provide a general indication and practical guidelines for the analyst to choose an efficient multidimensional separation platform according to the particular requirements of the application. Analysis time, orthogonality, peak capacity, and an indicative measure for the resolving power are discussed as main characteristics for multidimensional separation systems. Copyright © 2017 Elsevier B.V. All rights reserved.

Purification of flavonoids from licorice using an off-line preparative two-dimensional normal-phase liquid chromatography/reversed-phase liquid chromatography method.

PubMed

Fan, Yunpeng; Fu, Yanhui; Fu, Qing; Cai, Jianfeng; Xin, Huaxia; Dai, Mei; Jin, Yu

2016-07-01

An orthogonal (71.9%) off-line preparative two-dimensional normal-phase liquid chromatography/reversed-phase liquid chromatography method coupled with effective sample pretreatment was developed for separation and purification of flavonoids from licorice. Most of the nonflavonoids were firstly removed using a self-made Click TE-Cys (60 μm) solid-phase extraction. In the first dimension, an industrial grade preparative chromatography was employed to purify the crude flavonoids. Click TE-Cys (10 μm) was selected as the stationary phase that provided an excellent separation with high reproducibility. Ethyl acetate/ethanol was selected as the mobile phase owing to their excellent solubility for flavonoids. Flavonoids co-eluted in the first dimension were selected for further purification using reversed-phase liquid chromatography. Multiple compounds could be isolated from one normal-phase fraction and some compounds with bad resolution in one-dimensional liquid chromatography could be prepared in this two-dimensional system owing to the orthogonal separation. Moreover, this two-dimensional liquid chromatography method was beneficial for the preparation of relatively trace flavonoid compounds, which were enriched in the first dimension and further purified in the second dimension. Totally, 24 flavonoid compounds with high purity were obtained. The results demonstrated that the off-line two-dimensional liquid chromatography method was effective for the preparative separation and purification of flavonoids from licorice. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets

NASA Astrophysics Data System (ADS)

Tian, Hongzheng; Wang, Xudong; Zhu, Yuankun; Liao, Lei; Wang, Xianying; Wang, Jianlu; Hu, Weida

2017-01-01

High quality ultrathin two-dimensional zinc oxide (ZnO) nanosheets (NSs) are synthesized, and the ZnO NS ferroelectric field effect transistors (FeFETs) are demonstrated based on the P(VDF-TrFE) polymer film used as the top gate insulating layer. The ZnO NSs exhibit a maximum field effect mobility of 588.9 cm2/Vs and a large transconductance of 2.5 μS due to their high crystalline quality and ultrathin two-dimensional structure. The polarization property of the P(VDF-TrFE) film is studied, and a remnant polarization of >100 μC/cm2 is achieved with a P(VDF-TrFE) thickness of 300 nm. Because of the ultrahigh remnant polarization field generated in the P(VDF-TrFE) film, the FeFETs show a large memory window of 16.9 V and a high source-drain on/off current ratio of more than 107 at zero gate voltage and a source-drain bias of 0.1 V. Furthermore, a retention time of >3000 s of the polarization state is obtained, inspiring a promising candidate for applications in data storage with non-volatile features.

Improved performance of InSe field-effect transistors by channel encapsulation

NASA Astrophysics Data System (ADS)

Liang, Guangda; Wang, Yiming; Han, Lin; Yang, Zai-Xing; Xin, Qian; Kudrynskyi, Zakhar R.; Kovalyuk, Zakhar D.; Patanè, Amalia; Song, Aimin

2018-06-01

Due to the high electron mobility and photo-responsivity, InSe is considered as an excellent candidate for next generation electronics and optoelectronics. In particular, in contrast to many high-mobility two-dimensional (2D) materials, such as phosphorene, InSe is more resilient to oxidation in air. Nevertheless, its implementation in future applications requires encapsulation techniques to prevent the adsorption of gas molecules on its surface. In this work, we use a common lithography resist, poly(methyl methacrylate) (PMMA) to encapsulate InSe-based field-effect transistors (FETs). The encapsulation of InSe by PMMA improves the electrical stability of the FETs under a gate bias stress, and increases both the drain current and electron mobility. These findings indicate the effectiveness of the PMMA encapsulation method, which could be applied to other 2D materials.

AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination

NASA Astrophysics Data System (ADS)

Cordier, Y.; Azize, M.; Baron, N.; Chenot, S.; Tottereau, O.; Massies, J.

2007-11-01

In this work, we show that, by carefully designing the subsurface Fe doping profile in SI-GaN templates grown by MOVPE and by optimizing the MBE regrowth conditions, a highly resistive GaN buffer can be achieved on these epi-ready GaN-on-sapphire templates without any addition of acceptors during the regrowth. As a result, high-quality high electron mobility transistors can be fabricated. Furthermore, we report on the excellent properties of two-dimensional electron gas and device performances with electron mobility greater than 2000 cm 2/V s at room temperature and off-state buffer leakage currents as low as 5 μA/mm at 100 V.

Emission and detection of surface acoustic waves by AlGaN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Shao, Lei; Zhang, Meng; Banerjee, Animesh; Bhattacharya, Pallab; Pipe, Kevin P.

2011-12-01

Using integrated interdigital transducers (IDTs), we demonstrate the emission of surface acoustic waves (SAWs) by AlGaN/GaN high electron mobility transistors (HEMTs) under certain bias conditions through dynamic screening of the HEMTs vertical field by modulation of its two-dimensional electron gas. We show that a strong SAW signal can be detected if the IDT geometry replicates the HEMT electrode geometry at which RF bias is applied. In addition to characterizing SAW emission during both gate-source and drain-source modulation, we demonstrate SAW detection by HEMTs. Integrated HEMT-IDT structures could enable real-time evaluation of epitaxial degradation as well as high-speed, amplified detection of SAWs.

Terahertz magneto-optical spectroscopy of a two-dimensional hole gas

DOE PAGES

Kamaraju, N.; Pan, W.; Ekenberg, U.; ...

2015-01-21

Two-dimensional hole gases (2DHGs) have attracted recent attention for their unique quantum physics and potential applications in areas including spintronics and quantum computing. However, their properties remain relatively unexplored, motivating the use of different techniques to study them. We used terahertz magneto-optical spectroscopy to investigate the cyclotron resonance frequency in a high mobility 2DHG, revealing a nonlinear dependence on the applied magnetic field. This is also shown to be due to the complex non-parabolic valence band structure of the 2DHG, as verified by multiband Landau level calculations. We also find that impurity scattering dominates cyclotron resonance decay in the 2DHG,more » in contrast with the dominance of superradiant damping in two-dimensional electron gases. Furthermore, these results shed light on the properties of 2DHGs, motivating further studies of these unique 2D nanosystems.« less

Terahertz magneto-optical spectroscopy of a two-dimensional hole gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kamaraju, N., E-mail: nkamaraju@lanl.gov; Taylor, A. J.; Prasankumar, R. P., E-mail: rpprasan@lanl.gov

2015-01-19

Two-dimensional hole gases (2DHGs) have attracted recent attention for their unique quantum physics and potential applications in areas including spintronics and quantum computing. However, their properties remain relatively unexplored, motivating the use of different techniques to study them. We used terahertz magneto-optical spectroscopy to investigate the cyclotron resonance frequency in a high mobility 2DHG, revealing a nonlinear dependence on the applied magnetic field. This is shown to be due to the complex non-parabolic valence band structure of the 2DHG, as verified by multiband Landau level calculations. We also find that impurity scattering dominates cyclotron resonance decay in the 2DHG, inmore » contrast with the dominance of superradiant damping in two-dimensional electron gases. Our results shed light on the properties of 2DHGs, motivating further studies of these unique 2D nanosystems.« less

Seepage erosion mechanisms of bank collapse: three-dimensional seepage particle mobilization and undercutting

USDA-ARS?s Scientific Manuscript database

Seepage flow initiates undercutting, similar to development and headward migration of internal gullies, by liquefaction of soil particles, followed by mass wasting of the bank. Although seepage erosion has three-dimensional characteristics, two-dimensional lysimeters have been used in previous resea...

High-performance black phosphorus top-gate ferroelectric transistor for nonvolatile memory applications

NASA Astrophysics Data System (ADS)

Lee, Young Tack; Hwang, Do Kyung; Choi, Won Kook

2016-10-01

Two-dimensional (2D) van der Waals (vdW) atomic crystals have been extensively studied and significant progress has been made. The newest 2D vdW material, called black phosphorus (BP), has attracted considerable attention due to its unique physical properties, such as its being a singlecomponent material like graphene, and its having a high mobility and direct band gap. Here, we report on a high-performance BP nanosheet based ferroelectric field effect transistor (FeFET) with a poly(vinylidenefluoride-trifluoroethylene) top-gate insulator for a nonvolatile memory application. The BP FeFETs show the highest linear hole mobility of 563 cm2/Vs and a clear memory window of more than 15 V. For more advanced nonvolatile memory circuit applications, two different types of resistive-load and complementary ferroelectric memory inverters were implemented, which showed distinct memory on/off switching characteristics.

Anisotropic carrier mobility in buckled two-dimensional GaN.

PubMed

Tong, Lijia; He, Junjie; Yang, Min; Chen, Zheng; Zhang, Jing; Lu, Yanli; Zhao, Ziyuan

2017-08-30

Developing nanoelectronic engineering requires two-dimensional (2d) materials with both usable carrier mobility and proper large band-gap. In this study, we present a detailed theoretical investigation of the intrinsic carrier mobilities of buckled 2d GaN. This buckled 2d GaN is accessed by hydrofluorination (FGaNH) and hydrogenation (HGaNH). We predict that the anisotropic carrier mobilities of buckled 2d GaN can exceed those of 2d MoS 2 and can be altered by an alterable surface chemical bond (convert from a Ga-F-Ga bond of FGaNH to a Ga-H bond of HGaNH). Moreover, converting FGaNH to HGaNH can significantly suppress hole mobility (even close to zero) and result in a transition from a p-type-like semiconductor (FGaNH) to an n-type-like semiconductor (HGaNH). These features make buckled 2d GaN a promising candidate for application in future conductivity-adjustable electronics.

Student Mobility Reviewed: Attraction and Satisfaction of International Students in Turkey

ERIC Educational Resources Information Center

Kondakci, Yasar

2011-01-01

Building on international migration theories and the literature on the dynamics of student mobility, this study sketches a two-dimensional framework and examines its utility to understand the rationales of in-bounding student mobility in Turkey. The empirical part of the study was conducted with 331 international students studying in public…

Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor

NASA Astrophysics Data System (ADS)

Cleary, Justin W.; Peale, Robert E.; Saxena, Himanshu; Buchwald, Walter R.

2011-05-01

The observation of THz regime transmission resonances in an InGaAs/InP high electron mobility transistor (HEMT) can be attributed to excitation of plasmons in its two-dimensional electron gas (2DEG). Properties of grating-based, gate-voltage tunable resonances are shown to be adequately modeled using commercial finite element method (FEM) software when the HEMT layer structure, gate geometry and sheet charge concentration are taken into account. The FEM results are shown to produce results consistent with standard analytical theories in the 10-100 cm-1 wavenumber range. An original analytic formula presented here describes how the plasmonic resonance may change in the presence of a virtual gate, or region of relatively high free charge carriers that lies in the HEMT between the physical grating gate and the 2DEG. The virtual gate and corresponding analytic formulation are able to account for the red-shifting experimentally observed in plasmonic resonances. The calculation methods demonstrated here have the potential to greatly aid in the design of future detection devices that require specifically tuned plasmonic modes in the 2DEG of a HEMT, as well as giving new insights to aid in the development of more complete analytic theories.

Low resolution 1H NMR assignment of proton populations in pound cake and its polymeric ingredients.

PubMed

Luyts, A; Wilderjans, E; Waterschoot, J; Van Haesendonck, I; Brijs, K; Courtin, C M; Hills, B; Delcour, J A

2013-08-15

Based on a model system approach, five different proton populations were distinguished in pound cake crumb using one dimensional low resolution (1)H NMR spectroscopy. In free induction decay (FID) measurements, proton populations were assigned to (i) non-exchanging CH protons of crystalline starch, proteins and crystalline fat and (ii) non-exchanging CH protons of amorphous starch and gluten, which are in little contact with water. In Carr-Purcell-Meiboom-Gill (CPMG) measurements, three proton populations were distinguished. The CPMG population with the lowest mobility and the FID population with the highest mobility represent the same proton population. The two CPMG proton populations with the highest mobility were assigned to exchanging protons (i.e., protons of water, starch, gluten, egg proteins and sugar) and protons of lipids (i.e., protons of egg yolk lipids and amorphous lipid fraction of margarine) respectively. Based on their spin-lattice relaxation times (T1), two dimensional (1)H NMR spectroscopy further resolved the two proton populations with the highest mobility into three and two proton populations, respectively. Copyright © 2013 Elsevier Ltd. All rights reserved.

Transport properties of high quality heterostructures from unstable 2D crystals prepared in inert atmosphere

NASA Astrophysics Data System (ADS)

Yu, Geliang; Yang, Cao; Khestanova, Ekaterina; Mishchenko, Artem; Kretinin, Andy; Gorbachev, Roman; Novoselov, Konstantin; Andre, Geim; Manchester Group Team

Many layered materials can be cleaved down to individual atomic planes, similar to graphene, but only a small minority of them are stable under ambient conditions. The rest reacts and decomposes in air, which has severely hindered their investigation and possible uses. Here we introduce a remedial approach based on cleavage, transfer, alignment and encapsulation of airsensitive crystals, all inside a controlled inert atmosphere. To illustrate the technology, we choose two archetypal two-dimensional crystals unstable in air: black phosphorus and niobium diselenide. Our field-effect devices made from their monolayers are conductive and fully stable under ambient conditions, in contrast to the counterparts processed in air. NbSe2 remains superconducting down to the monolayer thickness. Starting with a trilayer, phosphorene devices reach sufficiently high mobilities to exhibit Landau quantization. The approach offers a venue to significantly expand the range of experimentally accessible two-dimensional crystals and their heterostructures.

Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jin, Dong-Dong; Department of Physics, Tsinghua University, Beijing 100084; Wang, Lian-shan, E-mail: ls-wang@semi.ac.cn

In this paper, a theory is developed to study the anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures. The inclined misfit dislocation, which differs from the well-known vertical threading dislocation, has a remarkable tilt angle from the vertical. The predicted electron mobility shows a remarkable anisotropy. It has a maximum mobility value along the direction perpendicular to the projection of the inclined dislocation line, and a minimum mobility value along the direction parallel to the projection. The degree of the anisotropic scattering effect will be even greater with the increase of themore » tilt angle.« less

Room-Temperature Determination of Two-Dimensional Electron Gas Concentration and Mobility in Heterostructures

NASA Technical Reports Server (NTRS)

Schacham, S. E.; Mena, R. A.; Haugland, E. J.; Alterovitz, S. A.

1993-01-01

A technique for determination of room-temperature two-dimensional electron gas (2DEG) concentration and mobility in heterostructures is presented. Using simultaneous fits of the longitudinal and transverse voltages as a function of applied magnetic field, we were able to separate the parameters associated with the 2DEG from those of the parallel layer. Comparison with the Shubnikov-de Haas data derived from measurements at liquid helium temperatures proves that the analysis of the room-temperature data provides an excellent estimate of the 2DEG concentration. In addition we were able to obtain for the first time the room-temperature mobility of the 2DEG, an important parameter to device application. Both results are significantly different from those derived from conventional Hall analysis.

Flexible black phosphorus ambipolar transistors, circuits and AM demodulator.

PubMed

Zhu, Weinan; Yogeesh, Maruthi N; Yang, Shixuan; Aldave, Sandra H; Kim, Joon-Seok; Sonde, Sushant; Tao, Li; Lu, Nanshu; Akinwande, Deji

2015-03-11

High-mobility two-dimensional (2D) semiconductors are desirable for high-performance mechanically flexible nanoelectronics. In this work, we report the first flexible black phosphorus (BP) field-effect transistors (FETs) with electron and hole mobilities superior to what has been previously achieved with other more studied flexible layered semiconducting transistors such as MoS2 and WSe2. Encapsulated bottom-gated BP ambipolar FETs on flexible polyimide afforded maximum carrier mobility of about 310 cm(2)/V·s with field-effect current modulation exceeding 3 orders of magnitude. The device ambipolar functionality and high-mobility were employed to realize essential circuits of electronic systems for flexible technology including ambipolar digital inverter, frequency doubler, and analog amplifiers featuring voltage gain higher than other reported layered semiconductor flexible amplifiers. In addition, we demonstrate the first flexible BP amplitude-modulated (AM) demodulator, an active stage useful for radio receivers, based on a single ambipolar BP transistor, which results in audible signals when connected to a loudspeaker or earphone. Moreover, the BP transistors feature mechanical robustness up to 2% uniaxial tensile strain and up to 5000 bending cycles.

Electron mobility in monoclinic β-Ga2O3—Effect of plasmon-phonon coupling, anisotropy, and confinement

NASA Astrophysics Data System (ADS)

Ghosh, Krishnendu; Singisetti, Uttam

2017-11-01

This work reports an investigation of electron transport in monoclinic \\beta-Ga2O3 based on a combination of density functional perturbation theory based lattice dynamical computations, coupling calculation of lattice modes with collective plasmon oscillations and Boltzmann theory based transport calculations. The strong entanglement of the plasmon with the different longitudinal optical (LO) modes make the role LO-plasmon coupling crucial for transport. The electron density dependence of the electron mobility in \\beta-Ga2O3 is studied in bulk material form and also in the form of two-dimensional electron gas. Under high electron density a bulk mobility of 182 cm2/ V.s is predicted while in 2DEG form the corresponding mobility is about 418 cm2/V.s when remote impurities are present at the interface and improves further as the remote impurity center moves away from the interface. The trend of the electron mobility shows promise for realizing high electron mobility in dopant isolated electron channels. The experimentally observed small anisotropy in mobility is traced through a transient Monte Carlo simulation. It is found that the anisotropy of the IR active phonon modes is responsible for giving rise to the anisotropy in low-field electron mobility.

GMove: Group-Level Mobility Modeling Using Geo-Tagged Social Media.

PubMed

Zhang, Chao; Zhang, Keyang; Yuan, Quan; Zhang, Luming; Hanratty, Tim; Han, Jiawei

2016-08-01

Understanding human mobility is of great importance to various applications, such as urban planning, traffic scheduling, and location prediction. While there has been fruitful research on modeling human mobility using tracking data ( e.g. , GPS traces), the recent growth of geo-tagged social media (GeoSM) brings new opportunities to this task because of its sheer size and multi-dimensional nature. Nevertheless, how to obtain quality mobility models from the highly sparse and complex GeoSM data remains a challenge that cannot be readily addressed by existing techniques. We propose GMove, a group-level mobility modeling method using GeoSM data. Our insight is that the GeoSM data usually contains multiple user groups, where the users within the same group share significant movement regularity. Meanwhile, user grouping and mobility modeling are two intertwined tasks: (1) better user grouping offers better within-group data consistency and thus leads to more reliable mobility models; and (2) better mobility models serve as useful guidance that helps infer the group a user belongs to. GMove thus alternates between user grouping and mobility modeling, and generates an ensemble of Hidden Markov Models (HMMs) to characterize group-level movement regularity. Furthermore, to reduce text sparsity of GeoSM data, GMove also features a text augmenter. The augmenter computes keyword correlations by examining their spatiotemporal distributions. With such correlations as auxiliary knowledge, it performs sampling-based augmentation to alleviate text sparsity and produce high-quality HMMs. Our extensive experiments on two real-life data sets demonstrate that GMove can effectively generate meaningful group-level mobility models. Moreover, with context-aware location prediction as an example application, we find that GMove significantly outperforms baseline mobility models in terms of prediction accuracy.

GMove: Group-Level Mobility Modeling Using Geo-Tagged Social Media

PubMed Central

Zhang, Chao; Zhang, Keyang; Yuan, Quan; Zhang, Luming; Hanratty, Tim; Han, Jiawei

2017-01-01

Understanding human mobility is of great importance to various applications, such as urban planning, traffic scheduling, and location prediction. While there has been fruitful research on modeling human mobility using tracking data (e.g., GPS traces), the recent growth of geo-tagged social media (GeoSM) brings new opportunities to this task because of its sheer size and multi-dimensional nature. Nevertheless, how to obtain quality mobility models from the highly sparse and complex GeoSM data remains a challenge that cannot be readily addressed by existing techniques. We propose GMove, a group-level mobility modeling method using GeoSM data. Our insight is that the GeoSM data usually contains multiple user groups, where the users within the same group share significant movement regularity. Meanwhile, user grouping and mobility modeling are two intertwined tasks: (1) better user grouping offers better within-group data consistency and thus leads to more reliable mobility models; and (2) better mobility models serve as useful guidance that helps infer the group a user belongs to. GMove thus alternates between user grouping and mobility modeling, and generates an ensemble of Hidden Markov Models (HMMs) to characterize group-level movement regularity. Furthermore, to reduce text sparsity of GeoSM data, GMove also features a text augmenter. The augmenter computes keyword correlations by examining their spatiotemporal distributions. With such correlations as auxiliary knowledge, it performs sampling-based augmentation to alleviate text sparsity and produce high-quality HMMs. Our extensive experiments on two real-life data sets demonstrate that GMove can effectively generate meaningful group-level mobility models. Moreover, with context-aware location prediction as an example application, we find that GMove significantly outperforms baseline mobility models in terms of prediction accuracy. PMID:28163978

Anisotropic transport properties of the two-dimensional electron gas in ordered-disordered GaInP2 homojunctions: The structure of ordered domains

NASA Astrophysics Data System (ADS)

Driessen, F. A. J. M.; Bauhuis, G. J.; Hageman, P. R.; van Geelen, A.; Giling, L. J.

1994-12-01

The modulation-doped ordered-GaInP2/disordered-GaInP2 homojunction is presented. Capacitance-voltage (CV) profiling techniques, temperature-dependent Hall and resistivity measurements, cross-sectional transverse electron micrographs (TEM), and high-field magnetotransport have been used to characterize this structure grown by metal-organic vapor-phase epitaxy. The CV measurements showed a narrow profile at the homointerface with an order of magnitude reduction in carrier density within 3 nm. Typical two-dimensional behavior was observed from Hall data showing sheet carrier densities as high as 3.6×1013 cm-2 without carrier freeze-out, and constant mobilities around 900 cm2 V-1 s-1 below T=100 K. The 300-K channel conductivity of this junction is 3.2×10-3 Ω-1, which is higher than reported for other two-dimensional electron gases. By proper choice of the substrate orientation, domains of only the (111¯) ordering variant were present. TEM showed elongated shapes of average thickness 3.5-6 nm and length 75 nm in the (011) plane. By using Hall bars with different current directions, an asymmetry is observed for the contributions to the scattering mechanisms which determine the mobility: ``mesoscopic'' interface-roughness scattering for T<100 K and cluster scattering for 100300 K indicates strong electron-phonon coupling. This asymmetry shows that the domain length in the (011) plane is larger than that in the (011¯) plane. The magnetoresistance ρxx and the Hall resistance ρxy show oscillations in reciprocal magnetic field involving an excited subband i with ni2D=7.6×1011 cm-2, where 2D denotes two dimensional. The ρxy versus B curve shows features of a slight parallel conduction.

High quality and uniformity GaN grown on 150 mm Si substrate using in-situ NH3 pulse flow cleaning process

NASA Astrophysics Data System (ADS)

Ji, Panfeng; Yang, Xuelin; Feng, Yuxia; Cheng, Jianpeng; Zhang, Jie; Hu, Anqi; Song, Chunyan; Wu, Shan; Shen, Jianfei; Tang, Jun; Tao, Chun; Pan, Yaobo; Wang, Xinqiang; Shen, Bo

2017-04-01

By using in-situ NH3 pulse flow cleaning method, we have achieved the repeated growth of high quality and uniformity GaN and AlGaN/GaN high electron mobility transistors (HEMTs) on 150 mm Si substrate. The two dimensional electron gas (2DEG) mobility is 2200 cm2/Vs with an electron density of 7.3 × 1012 cm-2. The sheet resistance is 305 ± 4 Ω/□ with ±1.3% variation. The achievement is attributed to the fact that this method can significantly remove the Al, Ga, etc. metal droplets coating on the post growth flow flange and reactor wall which are difficult to clean by normal bake process under H2 ambient.

Decoherence mechanisms of Landau level THz excitations in two dimensional electron gases

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maissen, Curdin; Scalari, Giacomo; Faist, Jérôme

2013-12-04

We report coherent THz transmission measurements on different two dimensional electron gases (2DEGs) in magnetic field. The investigated 2DEGs form in GaAs/AlGaAs heterostructures. A short (1 ps) linearly polarized THz pulse is used to excite inter Landau level transitions. The circular polarized radiation emitted by the 2DEG is then measured by electro optic sampling of the linear component orthogonal to the pump pulse polarization. Here we present measurements on two high mobility samples with μ = 5×10{sup 6}cm{sup 2}/Vs and μ = 16×10{sup 6}cm{sup 2}/Vs respectively. The decay times of the emitted radiation are 5.5 ps and 9 ps respectivelymore » at 2 K.« less

Fabrication and Analysis of a Selectively Contacted Dual Channel High Electron Mobility Field-Effect Transistor

NASA Astrophysics Data System (ADS)

Khanna, Ravi

1992-01-01

A selectively contacted dual-channel high electron mobility transistor (SCD-CHEMT) has been designed, fabricated, and electrically characterized, in order to better understand the properties of two layers of two-dimensional electron gases (2DEGs) confined within a quantum well. The 2DEGs are placed under a Schottky barrier control gate which modulates their sheet charge densities, and by use of auxiliary Schottky barrier gates and two levels of ohmic contacts, electrical contacts to the individual channels in which each 2DEG resides is achieved. The design of the dual channel FET structure, and its practical realization by recourse to process development and fabrication are described, as are the techniques, results, and interpretations of electrical characterizations used to analyze the completed device. Critical fabrication procedures involving photolithography, etching, deposition, shallow and deep ohmic contact formation, and gate formation are developed, and a simple technique to reduce gate leakage by photo-oxidation is demonstrated. Analysis of the completed device is performed using one-dimensional band diagram simulations, magnetotransport and electrical measurements. Magnetotransport studies establish the existence of two 2DEGs within the quantum well at 4K. Drain current vs. drain voltage, and transconductance vs. gate voltage characteristics at room temperature confirm the presence of two 2DEGs and show that current flow between them occurs easily at room temperature. Carrier electron mobility profiles are taken of the 2DEGs and show that the lower 2DEG has a mobility comparable to that of a 2DEG formed at a normal interface, indicating that the "inverted interface problem" has been overcome. Capacitance vs. gate voltage measurements are taken, which are consistent with a simple device model consisting of gate depletion and interelectrode parasitic capacitances. It is concluded from the analysis that the dual channel system resides in three basic states: (1) Both channels are occupied by 2DEGs or (2) The upper channel is depleted, or (3) Both channels depleted. Finally, increase in isolation between the two 2DEGs is dramatically demonstrated at 77K by the drain current vs. drain voltage, and transconductance vs. gate voltage characteristics.

Shapiro spikes and negative mobility for skyrmion motion on quasi-one-dimensional periodic substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reichhardt, Charles; Olson Reichhardt, Cynthia Jane

2017-01-12

Using a simple numerical model of skyrmions in a two-dimensional system interacting with a quasi-one-dimensional periodic substrate under combined dc and ac drives where the dc drive is applied perpendicular to the substrate periodicity, we show that a rich variety of novel phase-locking dynamics can occur due to the influence of the Magnus term on the skyrmion dynamics. Instead of Shapiro steps, the velocity response in the direction of the dc drive exhibits a series of spikes, including extended dc drive intervals over which the skyrmions move in the direction opposite to the dc drive, producing negative mobility. Also, theremore » are specific dc drive values at which the skyrmions move exactly perpendicular to the dc drive direction, giving a condition of absolute transverse mobility.« less

High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi 2O 2Se

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng

Identifying new two-dimensional (2D) materials with both high carrier mobility and a large electronic band gap is critical for novel electronics and optoelectronics applications. Here, we demonstrated a new air-stable ultrahigh-mobility layered Bi 2O 2Se semiconductor with a large band gap of ~ 0.8 eV and a low effective mass of ~ 0.14 m 0. High-quality 2D Bi2O2Se crystals with a thickness down to a monolayer and a domain size greater than 200 μm were readily grown by chemical vapor deposition (CVD). Size-tunable band gap of Bi 2O 2Se was found to increase as thinning down to the monolayer duemore » to the quantum confinement effect. An ultrahigh Hall mobility of > 20,000 cm 2 V -1 s -1 was achieved in as-grown Bi 2O 2Se flakes at 1.9 K, which allows for the observation of Shubnikov–de Haas quantum oscillations. Top-gated field-effect transistors based on CVD-grown 2D Bi 2O 2Se crystals (down to bilayer) exhibited high Hall mobility (up to 450 cm 2 V -1 s -1), large current on/off ratios (>106) and near-ideal subthreshold swings (~65 mV/dec) at room temperature. Our results make the high-mobility 2D Bi 2O 2Se semiconductor a promising candidate for future high-speed and low-power electronic applications.« less

High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi 2O 2Se

DOE PAGES

Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng; ...

2017-04-03

Identifying new two-dimensional (2D) materials with both high carrier mobility and a large electronic band gap is critical for novel electronics and optoelectronics applications. Here, we demonstrated a new air-stable ultrahigh-mobility layered Bi 2O 2Se semiconductor with a large band gap of ~ 0.8 eV and a low effective mass of ~ 0.14 m 0. High-quality 2D Bi2O2Se crystals with a thickness down to a monolayer and a domain size greater than 200 μm were readily grown by chemical vapor deposition (CVD). Size-tunable band gap of Bi 2O 2Se was found to increase as thinning down to the monolayer duemore » to the quantum confinement effect. An ultrahigh Hall mobility of > 20,000 cm 2 V -1 s -1 was achieved in as-grown Bi 2O 2Se flakes at 1.9 K, which allows for the observation of Shubnikov–de Haas quantum oscillations. Top-gated field-effect transistors based on CVD-grown 2D Bi 2O 2Se crystals (down to bilayer) exhibited high Hall mobility (up to 450 cm 2 V -1 s -1), large current on/off ratios (>106) and near-ideal subthreshold swings (~65 mV/dec) at room temperature. Our results make the high-mobility 2D Bi 2O 2Se semiconductor a promising candidate for future high-speed and low-power electronic applications.« less

Real-time visual tracking of less textured three-dimensional objects on mobile platforms

NASA Astrophysics Data System (ADS)

Seo, Byung-Kuk; Park, Jungsik; Park, Hanhoon; Park, Jong-Il

2012-12-01

Natural feature-based approaches are still challenging for mobile applications (e.g., mobile augmented reality), because they are feasible only in limited environments such as highly textured and planar scenes/objects, and they need powerful mobile hardware for fast and reliable tracking. In many cases where conventional approaches are not effective, three-dimensional (3-D) knowledge of target scenes would be beneficial. We present a well-established framework for real-time visual tracking of less textured 3-D objects on mobile platforms. Our framework is based on model-based tracking that efficiently exploits partially known 3-D scene knowledge such as object models and a background's distinctive geometric or photometric knowledge. Moreover, we elaborate on implementation in order to make it suitable for real-time vision processing on mobile hardware. The performance of the framework is tested and evaluated on recent commercially available smartphones, and its feasibility is shown by real-time demonstrations.

Conjugated organic framework with three-dimensionally ordered stable structure and delocalized π clouds

NASA Astrophysics Data System (ADS)

Guo, Jia; Xu, Yanhong; Jin, Shangbin; Chen, Long; Kaji, Toshihiko; Honsho, Yoshihito; Addicoat, Matthew A.; Kim, Jangbae; Saeki, Akinori; Ihee, Hyotcherl; Seki, Shu; Irle, Stephan; Hiramoto, Masahiro; Gao, Jia; Jiang, Donglin

2013-11-01

Covalent organic frameworks are a class of crystalline organic porous materials that can utilize π-π-stacking interactions as a driving force for the crystallization of polygonal sheets to form layered frameworks and ordered pores. However, typical examples are chemically unstable and lack intrasheet π-conjugation, thereby significantly limiting their applications. Here we report a chemically stable, electronically conjugated organic framework with topologically designed wire frameworks and open nanochannels, in which the π conjugation-spans the two-dimensional sheets. Our framework permits inborn periodic ordering of conjugated chains in all three dimensions and exhibits a striking combination of properties: chemical stability, extended π-delocalization, ability to host guest molecules and hole mobility. We show that the π-conjugated organic framework is useful for high on-off ratio photoswitches and photovoltaic cells. Therefore, this strategy may constitute a step towards realizing ordered semiconducting porous materials for innovations based on two-dimensionally extended π systems.

Theoretical study of energy states of two-dimensional electron gas in pseudomorphically strained InAs HEMTs taking into account the non-parabolicity of the conduction band

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nishio, Yui; Yamaguchi, Satoshi; Yamazaki, Youichi

2013-12-04

We determined rigorously the energy states of a two-dimensional electron gas (2DEG) in high electron mobility transistors (HEMTs) with a pseudomorphically strained InAs channel (InAs PHEMTs) taking into account the non-parabolicity of the conduction band for InAs. The sheet carrier concentration of 2DEG for the non-parabolic energy band was about 50% larger than that for the parabolic energy band and most of the electrons are confined strongly in the InAs layer. In addition, the threshold voltage for InAs PHEMTs was about 0.21 V lower than that for conventional InGaAs HEMTs.

Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors

PubMed Central

Ahn, Cheol Hyoun; Senthil, Karuppanan; Cho, Hyung Koun; Lee, Sang Yeol

2013-01-01

High-performance thin-film transistors (TFTs) are the fundamental building blocks in realizing the potential applications of the next-generation displays. Atomically controlled superlattice structures are expected to induce advanced electric and optical performance due to two-dimensional electron gas system, resulting in high-electron mobility transistors. Here, we have utilized a semiconductor/insulator superlattice channel structure comprising of ZnO/Al2O3 layers to realize high-performance TFTs. The TFT with ZnO (5 nm)/Al2O3 (3.6 nm) superlattice channel structure exhibited high field effect mobility of 27.8 cm2/Vs, and threshold voltage shift of only < 0.5 V under positive/negative gate bias stress test during 2 hours. These properties showed extremely improved TFT performance, compared to ZnO TFTs. The enhanced field effect mobility and stability obtained for the superlattice TFT devices were explained on the basis of layer-by-layer growth mode, improved crystalline nature of the channel layers, and passivation effect of Al2O3 layers. PMID:24061388

Effects of punishment in a mobile population playing the prisoner's dilemma game

NASA Astrophysics Data System (ADS)

Amor, Daniel R.; Fort, Joaquim

2011-12-01

We deal with a system of prisoner's dilemma players undergoing continuous motion in a two-dimensional plane. In contrast to previous work, we introduce altruistic punishment after the game. We find punishing only a few of the cooperator-defector interactions is enough to lead the system to a cooperative state in environments where otherwise defection would take over the population. This happens even with soft nonsocial punishment (where both cooperators and defectors punish other players, a behavior observed in many human populations). For high enough mobilities or temptations to defect, low rates of social punishment can no longer avoid the breakdown of cooperation.

A molecular design principle of lyotropic liquid-crystalline conjugated polymers with directed alignment capability for plastic electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Bong-Gi; Jeong, Eun Jeong; Chung, Jong Won

Conjugated polymers with a one-dimensional p-orbital overlap exhibit optoelectronic anisotropy. Their unique anisotropic properties can be fully realized in device applications only when the conjugated chains are aligned. Here, we report a molecular design principle of conjugated polymers to achieve concentration-regulated chain planarization, self-assembly, liquid-crystal-like good mobility and non-interdigitated side chains. As a consequence of these intra- and intermolecular attributes, chain alignment along an applied flow field occurs. This liquid-crystalline conjugated polymer was realized by incorporating intramolecular sulphur–fluorine interactions and bulky side chains linked to a tetrahedral carbon having a large form factor. By optimizing the polymer concentration and themore » flow field, we could achieve a high dichroic ratio of 16.67 in emission from conducting conjugated polymer films. Two-dimensional grazing-incidence X-ray diffraction was performed to analyse a well-defined conjugated polymer alignment. Thin-film transistors built on highly aligned conjugated polymer films showed more than three orders of magnitude faster carrier mobility along the conjugated polymer alignment direction than the perpendicular direction.« less

Enhanced thermoelectric performance in three-dimensional superlattice of topological insulator thin films

PubMed Central

2012-01-01

We show that certain three-dimensional (3D) superlattice nanostructure based on Bi2Te3 topological insulator thin films has better thermoelectric performance than two-dimensional (2D) thin films. The 3D superlattice shows a predicted peak value of ZT of approximately 6 for gapped surface states at room temperature and retains a high figure of merit ZT of approximately 2.5 for gapless surface states. In contrast, 2D thin films with gapless surface states show no advantage over bulk Bi2Te3. The enhancement of the thermoelectric performance originates from a combination of the reduction of lattice thermal conductivity by phonon-interface scattering, the high mobility of the topologically protected surface states, the enhancement of Seebeck coefficient, and the reduction of electron thermal conductivity by energy filtering. Our study shows that the nanostructure design of topological insulators provides a possible new way of ZT enhancement. PMID:23072433

Enhanced thermoelectric performance in three-dimensional superlattice of topological insulator thin films.

PubMed

Fan, Zheyong; Zheng, Jiansen; Wang, Hui-Qiong; Zheng, Jin-Cheng

2012-10-16

We show that certain three-dimensional (3D) superlattice nanostructure based on Bi2Te3 topological insulator thin films has better thermoelectric performance than two-dimensional (2D) thin films. The 3D superlattice shows a predicted peak value of ZT of approximately 6 for gapped surface states at room temperature and retains a high figure of merit ZT of approximately 2.5 for gapless surface states. In contrast, 2D thin films with gapless surface states show no advantage over bulk Bi2Te3. The enhancement of the thermoelectric performance originates from a combination of the reduction of lattice thermal conductivity by phonon-interface scattering, the high mobility of the topologically protected surface states, the enhancement of Seebeck coefficient, and the reduction of electron thermal conductivity by energy filtering. Our study shows that the nanostructure design of topological insulators provides a possible new way of ZT enhancement.

a Voxel-Based Filtering Algorithm for Mobile LIDAR Data

NASA Astrophysics Data System (ADS)

Qin, H.; Guan, G.; Yu, Y.; Zhong, L.

2018-04-01

This paper presents a stepwise voxel-based filtering algorithm for mobile LiDAR data. In the first step, to improve computational efficiency, mobile LiDAR points, in xy-plane, are first partitioned into a set of two-dimensional (2-D) blocks with a given block size, in each of which all laser points are further organized into an octree partition structure with a set of three-dimensional (3-D) voxels. Then, a voxel-based upward growing processing is performed to roughly separate terrain from non-terrain points with global and local terrain thresholds. In the second step, the extracted terrain points are refined by computing voxel curvatures. This voxel-based filtering algorithm is comprehensively discussed in the analyses of parameter sensitivity and overall performance. An experimental study performed on multiple point cloud samples, collected by different commercial mobile LiDAR systems, showed that the proposed algorithm provides a promising solution to terrain point extraction from mobile point clouds.

Observation of anomalous Hall effect in a non-magnetic two-dimensional electron system

PubMed Central

Maryenko, D.; Mishchenko, A. S.; Bahramy, M. S.; Ernst, A.; Falson, J.; Kozuka, Y.; Tsukazaki, A.; Nagaosa, N.; Kawasaki, M.

2017-01-01

Anomalous Hall effect, a manifestation of Hall effect occurring in systems without time-reversal symmetry, has been mostly observed in ferromagnetically ordered materials. However, its realization in high-mobility two-dimensional electron system remains elusive, as the incorporation of magnetic moments deteriorates the device performance compared to non-doped structure. Here we observe systematic emergence of anomalous Hall effect in various MgZnO/ZnO heterostructures that exhibit quantum Hall effect. At low temperatures, our nominally non-magnetic heterostructures display an anomalous Hall effect response similar to that of a clean ferromagnetic metal, while keeping a large anomalous Hall effect angle θAHE≈20°. Such a behaviour is consistent with Giovannini–Kondo model in which the anomalous Hall effect arises from the skew scattering of electrons by localized paramagnetic centres. Our study unveils a new aspect of many-body interactions in two-dimensional electron systems and shows how the anomalous Hall effect can emerge in a non-magnetic system. PMID:28300133

Three-dimensional image acquisition and reconstruction system on a mobile device based on computer-generated integral imaging.

PubMed

Erdenebat, Munkh-Uchral; Kim, Byeong-Jun; Piao, Yan-Ling; Park, Seo-Yeon; Kwon, Ki-Chul; Piao, Mei-Lan; Yoo, Kwan-Hee; Kim, Nam

2017-10-01

A mobile three-dimensional image acquisition and reconstruction system using a computer-generated integral imaging technique is proposed. A depth camera connected to the mobile device acquires the color and depth data of a real object simultaneously, and an elemental image array is generated based on the original three-dimensional information for the object, with lens array specifications input into the mobile device. The three-dimensional visualization of the real object is reconstructed on the mobile display through optical or digital reconstruction methods. The proposed system is implemented successfully and the experimental results certify that the system is an effective and interesting method of displaying real three-dimensional content on a mobile device.

Dependence of spin dephasing on initial spin polarization in a high-mobility two-dimensional electron system

NASA Astrophysics Data System (ADS)

Stich, D.; Zhou, J.; Korn, T.; Schulz, R.; Schuh, D.; Wegscheider, W.; Wu, M. W.; Schüller, C.

2007-11-01

We have studied the spin dynamics of a high-mobility two-dimensional electron system in a GaAs/Al0.3Ga0.7As single quantum well by time-resolved Faraday rotation and time-resolved Kerr rotation in dependence on the initial degree of spin polarization, P , of the electrons. By increasing the initial spin polarization from the low- P regime to a significant P of several percent, we find that the spin dephasing time, T2* , increases from about 20to200ps . Moreover, T2* increases with temperature at small spin polarization but decreases with temperature at large spin polarization. All these features are in good agreement with theoretical predictions by Weng and Wu [Phys. Rev. B 68, 075312 (2003)]. Measurements as a function of spin polarization at fixed electron density are performed to further confirm the theory. A fully microscopic calculation is performed by setting up and numerically solving the kinetic spin Bloch equations, including the D’yakonov-Perel’ and the Bir-Aronov-Pikus mechanisms, with all the scattering explicitly included. We reproduce all principal features of the experiments, i.e., a dramatic decrease of spin dephasing with increasing P and the temperature dependences at different spin polarizations.

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

NASA Astrophysics Data System (ADS)

Freedsman, J. J.; Watanabe, A.; Urayama, Y.; Egawa, T.

2015-09-01

The authors report on Al2O3/Al0.85In0.15N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al2O3 as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al2O3/Al0.85In0.15N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

Freely Suspended Two-Dimensional Electron Gases.

NASA Astrophysics Data System (ADS)

Blick, Robert; Monzon, Franklin; Roukes, Michael; Wegscheider, Werner; Stern, Frank

1998-03-01

We present a new technique that has allowed us to build the first freely suspended two-dimensional electron gas devices from AlGaAs/GaAs/AlAs heterostructures. This technique is based upon specially MBE grown structures that include a sacrificial layer. In order to design the MBE layer sequence, the conduction band lineup for these samples was modelled numerically. The overall focus of this work is to provide a new approach for studies of the quantum mechanical properties of nanomachined structures. Our current experiments are directed toward use of these techniques for research on very high frequency nanomechanical resonators. The high mobility 2DEG system provides a unique approach to realizing wideband, extremely sensitive displacement detection, using the piezoelectric properties of GaAs to modulate a suspended nanometer-scale HEMT. This approach offers promise for sensitive displacement detectors with sub-nanometer resolution and bandwidths into the microwave range.

Single-valley quantum Hall ferromagnet in a dilute Mg xZn 1-xO/ZnO strongly correlated two-dimensional electron system

DOE PAGES

Kozuka, Y.; Tsukazaki, A.; Maryenko, D.; ...

2012-02-03

We investigate the spin susceptibility (g*m*) of dilute two-dimensional (2D) electrons confined at the Mg xZn 1-xO/ZnO heterointerface. Magnetotransport measurements show a four-fold enhancement of g*m*, dominated by the increase in the Landé g-factor. The g-factor enhancement leads to a ferromagnetic instability of the electron gas as evidenced by sharp resistance spikes. At high magnetic field, the large g*m* leads to full spin polarization, where we found sudden increase in resistance around the filling factors of half-integer, accompanied by complete disappearance of fractional quantum Hall (QH) states. Along with its large effective mass and the high electron mobility, our resultmore » indicates that the ZnO 2D system is ideal for investigating the effect of electron correlations in the QH regime.« less

Two-dimensional electron gas in monolayer InN quantum wells

DOE PAGES

Pan, Wei; Dimakis, Emmanouil; Wang, George T.; ...

2014-11-24

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5×10 15 cm -2 and 420 cm 2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.

Electrical properties and subband occupancy at the (La ,Sr ) (Al ,Ta ) O3/SrTi O3 interface

NASA Astrophysics Data System (ADS)

Han, K.; Huang, Z.; Zeng, S. W.; Yang, M.; Li, C. J.; Zhou, W. X.; Wang, X. Renshaw; Venkatesan, T.; Coey, J. M. D.; Goiran, M.; Escoffier, W.; Ariando

2017-06-01

The quasi-two-dimensional electron gas at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility (L a0.3S r0.7 ) (A l0.65T a0.35 ) O3/SrTi O3 interface. Before oxygen annealing, the as-grown interface exhibits a high electron density and electron occupancy of two subbands: higher-mobility electrons (μ1≈104c m2V-1s-1 at 2 K) occupy the lower-energy 3 dxy subband, while lower-mobility electrons (μ1≈103c m2V-1s-1 at 2 K) propagate in the higher-energy 3 dxz /yz -dominated subband. After removing oxygen vacancies by annealing in oxygen, only a single type of 3 dxy electrons remain at the annealed interface, showing tunable Shubnikov-de Haas oscillations below 9 T at 2 K and an effective mass of 0.7 me . By contrast, no oscillation is observed at the as-grown interface even when electron mobility is increased to 50 000 c m2V-1s-1 by gating voltage. Our results reveal the important roles of both carrier mobility and subband occupancy in tuning the quantum transport at oxide interfaces.

Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Li, Haoran; Mazumder, Baishakhi; Bonef, Bastien; Keller, Stacia; Wienecke, Steven; Speck, James S.; Denbaars, Steven P.; Mishra, Umesh K.

2017-11-01

In GaN/(Al,Ga)N high-electron-mobility transistors (HEMT), AlN interlayer between GaN channel and AlGaN barrier suppresses alloy scattering and significantly improves the electron mobility of the two-dimensional electron gas. While high concentrations of gallium were previously observed in Al-polar AlN interlayers grown by metal-organic chemical vapor deposition, the N-polar AlN (Al x Ga1-x N) films examined by atom probe tomography in this study exhibited aluminum compositions (x) equal to or higher than 95% over a wide range of growth conditions. The also investigated AlN interlayer in a N-polar GaN/AlN/AlGaN/ S.I. GaN HEMT structure possessed a similarly high x content.

Confined Doping for Control of Transport Properties in Nanowires and Nanofilms

NASA Astrophysics Data System (ADS)

Zhong, Jianxin; Stocks, G. Malcolm

2006-03-01

Doping, an essential element for manipulation of electronic transport in traditional semiconductor industry, is widely expected to play important role as well in control of transport properties in nanostructures. However, traditional theory of electronic disorder predicts that doping in one-dimensional and two-dimensional systems leads to carrier localization, limiting practical applications due to poor carrier mobility. Here, a novel concept is proposed that offers the possibility to significantly increase carrier mobility by confining the distribution of dopants within a particular region [1]. Thus, the doped nanostructure becomes a coupled system comprising a doped subsystem and a perfect crystalline subsystem. We showed that carrier mobility in such a dopped nanowire or a nanofilm exhibits counterintuitive behavior in the regime of heavy doping. In particular, the larger the dopant concentration the higher the carrier mobility; we trace this transition to the existence of quasi-mobility-edges in the nanowires and mobility edges in nanofilms. *J.X. Zhong and G.M. Stocks, Nano Lett., in press, (2005)

Far Infrared and Electrical Transport Studies of Oxide - Charge - Induced Localized States in a Model Two-Dimensional System.

NASA Astrophysics Data System (ADS)

Glaser, Evan R.

Far-infrared measurements of intersubband absorption spectra and dc electrical transport studies of n-inversion layers in (100) Si. Metal-Oxide-Semiconductor-Field-Effect-Transistors (MOSFETs) with mobile positive ions in the oxide are performed at temperatures between 1.7 and 80K. The results provide evidence for the existence of impurity bands and for screening of these localized states in this quasi two-dimensional electronic system. The properties of the elec- tronic states in the sub-micron (<10('-6)m) conducting layer of the MOS devices are probed in detail by conductance, capacitance and trans- conductance measurements and by optical absorption measure- ments with the aid of a Far-Infrared Fourier Transform Spectrometer. Data are obtained with positive oxide charge density as a parameter, varied by the drifting at room temperature of controlled amounts of. positive ions ((DELTA)N(,ox)) to the oxide-semiconductor interface (1.3 x 10('11) (LESSTHEQ) (DELTA)N(,ox) (LESSTHEQ) 7.0 x 10('11) cm('-2)) in the presence of positive gate voltages. (3-7V). In addition, high mobility devices in which no positive impurity ions had been purposely introduced are investigated to provide a basis for comparison with the corresponding results from poor mobil- ity devices. Studies are carried out for a wide range of net interfacial. oxide charge densities (2 x 10('10) cm('-2) (LESSTHEQ) N(,ox) (LESSTHEQ) 1 x 10('12) cm('-2)), and substrate source bias voltages (-9V (LESSTHEQ) V(,S) (LESSTHEQ) 1V) with the goal of. attaining a better understanding of the nature of localization effects (e.g., two-dimensional carrier localization), interface scattering, and many-body Coulombic interactions (e.g., screening effects) in these structures. The present measurements provide evidence for the existence of impurity bands and long band tails at low electron densities (n(,s) (LESSTHEQ) N(,ox)) associated with subbands due to both the inequivalent conduction-band valleys and for screening of these. localized states at high electron densities (n(,s) >(, )N(,ox)). In addition, at high inversion layer electron densities the intersubband resonance linewidths at 4.2K as a function of positive oxide charge density are found to be correlated with the corresponding scattering rates determined from the low temperature effective mobilities. The results of these studies are compared with recent experimental investigations of this and similar systems and with predictions of available theoretical models.

Spin-polarized two-dimensional electron gas at GdTi O3/SrTi O3 interfaces: Insight from first-principles calculations

NASA Astrophysics Data System (ADS)

Betancourt, J.; Paudel, T. R.; Tsymbal, E. Y.; Velev, J. P.

2017-07-01

Two-dimensional electron gases (2DEGs) at oxide interfaces have been a topic of intensive research due to their high carrier mobility and strong confinement. Additionally, strong correlations in the oxide materials can give rise to new and interesting physics, such as magnetism and metal-insulator transitions at the interface. Using first-principles calculations based on density functional theory, we demonstrate the presence of a highly spin-polarized 2DEG at the interface between the Mott insulator GdTi O3 and a band insulator SrTi O3 . The strong correlations in the dopant cause ferromagnetic alignment of the interface Ti atoms and result in a fully spin-polarized 2DEG. The 2DEG consists of two types of carriers distinguished by their orbital character. The majority of the interface charge is strongly localized on the Ti dx y orbitals at the interface and a smaller fraction resides on the delocalized Ti dx z ,y z states.

Development of a finite volume two-dimensional model and its application in a bay with two inlets: Mobile Bay, Alabama

NASA Astrophysics Data System (ADS)

Lee, Jun; Lee, Jungwoo; Yun, Sang-Leen; Oh, Hye-Cheol

2017-08-01

The purpose of this study was to develop a two-dimensional shallow water flow model using the finite volume method on a combined unstructured triangular and quadrilateral grid system to simulate coastal, estuarine and river flows. The intercell numerical fluxes were calculated using the classical Osher-Solomon's approximate Riemann solver for the governing conservation laws to be able to handle wetting and drying processes and to capture a tidal bore like phenomenon. The developed model was validated with several benchmark test problems including the two-dimensional dam-break problem. The model results were well agreed with results of other models and experimental results in literature. The unstructured triangular and quadrilateral combined grid system was successfully implemented in the model, thus the developed model would be more flexible when applying in an estuarine system, which includes narrow channels. Then, the model was tested in Mobile Bay, Alabama, USA. The developed model reproduced water surface elevation well as having overall Predictive Skill of 0.98. We found that the primary inlet, Main Pass, only covered 35% of the fresh water exchange while it covered 89% of the total water exchange between the ocean and Mobile Bay. There were also discharge phase difference between MP and the secondary inlet, Pass aux Herons, and this phase difference in flows would act as a critical role in substances' exchange between the eastern Mississippi Sound and the northern Gulf of Mexico through Main Pass and Pass aux Herons in Mobile Bay.

Observation of abnormal mobility enhancement in multilayer MoS2 transistor by synergy of ultraviolet illumination and ozone plasma treatment

NASA Astrophysics Data System (ADS)

Guo, Junjie; Yang, Bingchu; Zheng, Zhouming; Jiang, Jie

2017-03-01

Mobility engineering through physical or chemical process is a fruitful approach for the atomically-layered two-dimensional electronic applications. Unfortunately, the usual process with either illumination or oxygen treatment would greatly deteriorate the mobility in two-dimensional MoS2 field-effect transistor (FET). Here, in this work, we report that the mobility can be abnormally enhanced to an order of magnitude by the synergy of ultraviolet illumination (UV) and ozone plasma treatment in multilayer MoS2 FET. This abnormal mobility enhancement is attributed to the trap passivation due to the photo-generated excess carriers during UV/ozone plasma treatment. An energy band model based on Schottky barrier modulation is proposed to understand the underlying mechanism. Raman spectra results indicate that the oxygen ions are incorporated into the surface of MoS2 (some of them are in the form of ultra-thin Mo-oxide) and can further confirm this proposed mechanism. Our results can thus provide a simple approach for mobility engineering in MoS2-based FET and can be easily expanded to other 2D electronic devices, which represents a significant step toward applications of 2D layered materials in advanced cost-effective electronics.

Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistor and Its RF Power Efficiency Optimization with Source-Bridged Field-Plate Structure.

PubMed

Kwak, Hyeon-Tak; Chang, Seung-Bo; Jung, Hyun-Gu; Kim, Hyun-Seok

2018-09-01

In this study, we consider the relationship between the temperature in a two-dimensional electron gas (2-DEG) channel layer and the RF characteristics of an AlGaN/GaN high-electron-mobility transistor by changing the geometrical structure of the field-plate. The final goal is to achieve a high power efficiency by decreasing the channel layer temperature. First, simulations were performed to compare and contrast the experimental data of a conventional T-gate head structure. Then, a source-bridged field-plate (SBFP) structure was used to obtain the lower junction temperature in the 2-DEG channel layer. The peak electric field intensity was reduced, and a decrease in channel temperature resulted in an increase in electron mobility. Furthermore, the gate-to-source capacitance was increased by the SBFP structure. However, under the large current flow condition, the SBFP structure had a lower maximum temperature than the basic T-gate head structure, which improved the device electron mobility. Eventually, an optimum position of the SBFP was used, which led to higher frequency responses and improved the breakdown voltages. Hence, the optimized SBFP structure can be a promising candidate for high-power RF devices.

Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature.

PubMed

Liu, Xinke; Ang, Kah-Wee; Yu, Wenjie; He, Jiazhu; Feng, Xuewei; Liu, Qiang; Jiang, He; Dan Tang; Wen, Jiao; Lu, Youming; Liu, Wenjun; Cao, Peijiang; Han, Shun; Wu, Jing; Liu, Wenjun; Wang, Xi; Zhu, Deliang; He, Zhubing

2016-04-22

Black phosphorus (BP) has emerged as a promising two-dimensional (2D) material for next generation transistor applications due to its superior carrier transport properties. Among other issues, achieving reduced subthreshold swing and enhanced hole mobility simultaneously remains a challenge which requires careful optimization of the BP/gate oxide interface. Here, we report the realization of high performance BP transistors integrated with HfO2 high-k gate dielectric using a low temperature CMOS process. The fabricated devices were shown to demonstrate a near ideal subthreshold swing (SS) of ~69 mV/dec and a room temperature hole mobility of exceeding >400 cm(2)/Vs. These figure-of-merits are benchmarked to be the best-of-its-kind, which outperform previously reported BP transistors realized on traditional SiO2 gate dielectric. X-ray photoelectron spectroscopy (XPS) analysis further reveals the evidence of a more chemically stable BP when formed on HfO2 high-k as opposed to SiO2, which gives rise to a better interface quality that accounts for the SS and hole mobility improvement. These results unveil the potential of black phosphorus as an emerging channel material for future nanoelectronic device applications.

Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

NASA Astrophysics Data System (ADS)

Li, Haoran; Wienecke, Steven; Romanczyk, Brian; Ahmadi, Elaheh; Guidry, Matthew; Zheng, Xun; Keller, Stacia; Mishra, Umesh K.

2018-02-01

A GaN/InGaN composite channel design for vertically scaled N-polar high-electron-mobility transistor (HEMT) structures is proposed and demonstrated by metal-organic chemical vapor deposition. In a conventional N-polar HEMT structure, as the channel thickness (tch) decreases, the sheet charge density (ns) decreases, the electric field in the channel increases, and the centroid of the two-dimensional electron gas (2DEG) moves towards the back-barrier/channel interface, resulting in stronger scattering and lower electron mobility (μ). In this study, a thin InGaN layer was introduced in-between the channel and the AlGaN cap to increase the 2DEG density and reduce the electric field in the channel and therefore increase the electron mobility. The dependence of μ on the InGaN thickness (tInGaN) and the indium composition (xIn) was investigated for different channel thicknesses. With optimized tInGaN and xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT structure, the electron mobility increased from 606 to 1141 cm2/(V.s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In0.1Ga0.9N composite channel.

A Model and Measure of Mobile Communication Competence

ERIC Educational Resources Information Center

Bakke, Emil

2010-01-01

This article deals with two studies that develop a measure and model of mobile communication competence (MCC). The first study examines the dimensionality of the measure by conducting an exploratory factor analysis on 350 students at a large university in the midwestern United States. Results identified six constructs across 24 items: willingness…

The Measurement and Dimensionality of Mobile Learning Systems Success: Two-Stage Development and Validation

ERIC Educational Resources Information Center

Lin, Hsin-Hui; Wang, Yi-Shun; Li, Ci-Rong; Shih, Ying-Wei; Lin, Shin-Jeng

2017-01-01

The main purpose of this study is to develop and validate a multidimensional instrument for measuring mobile learning systems success (MLSS) based on the previous research. This study defines the construct of MLSS, develops a generic MLSS instrument with desirable psychometric properties, and explores the instrument's theoretical and practical…

Modeling of anomalous electron mobility in Hall thrusters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koo, Justin W.; Boyd, Iain D.

Accurate modeling of the anomalous electron mobility is absolutely critical for successful simulation of Hall thrusters. In this work, existing computational models for the anomalous electron mobility are used to simulate the UM/AFRL P5 Hall thruster (a 5 kW laboratory model) in a two-dimensional axisymmetric hybrid particle-in-cell Monte Carlo collision code. Comparison to experimental results indicates that, while these computational models can be tuned to reproduce the correct thrust or discharge current, it is very difficult to match all integrated performance parameters (thrust, power, discharge current, etc.) simultaneously. Furthermore, multiple configurations of these computational models can produce reasonable integrated performancemore » parameters. A semiempirical electron mobility profile is constructed from a combination of internal experimental data and modeling assumptions. This semiempirical electron mobility profile is used in the code and results in more accurate simulation of both the integrated performance parameters and the mean potential profile of the thruster. Results indicate that the anomalous electron mobility, while absolutely necessary in the near-field region, provides a substantially smaller contribution to the total electron mobility in the high Hall current region near the thruster exit plane.« less

Revealing Surface States in In-Doped SnTe Nanoplates with Low Bulk Mobility.

PubMed

Shen, Jie; Xie, Yujun; Cha, Judy J

2015-06-10

Indium (In) doping in topological crystalline insulator SnTe induces superconductivity, making In-doped SnTe a candidate for a topological superconductor. SnTe nanostructures offer well-defined nanoscale morphology and high surface-to-volume ratios to enhance surface effects. Here, we study In-doped SnTe nanoplates, In(x)Sn(1-x)Te, with x ranging from 0 to 0.1 and show they superconduct. More importantly, we show that In doping reduces the bulk mobility of In(x)Sn(1-x)Te such that the surface states are revealed in magnetotransport despite the high bulk carrier density. This is manifested by two-dimensional linear magnetoresistance in high magnetic fields, which is independent of temperature up to 10 K. Aging experiments show that the linear magnetoresistance is sensitive to ambient conditions, further confirming its surface origin. We also show that the weak antilocalization observed in In(x)Sn(1-x)Te nanoplates is a bulk effect. Thus, we show that nanostructures and reducing the bulk mobility are effective strategies to reveal the surface states and test for topological superconductors.

Localization and mobility edges in one-dimensional deterministic potentials

NASA Astrophysics Data System (ADS)

Tong, Peiqing

1994-10-01

In this paper, we study the localization properties of the wave function of a one-dimensional tight-binding electron moving in an asymptotic periodic potential, Vn=λ cos(2πQn+παnν), where n is the site index and 0<ν<1. For Q rational, the electronic energy band consists of many subbands, and the number of subbands is determined by Q. For λ<2, there are two mobility edges where the eigenstates at the subband center are all extended, whereas the subband-edge states are all localized in every subband. We develop some heuristic arguments to calculate exactly the mobility edges for this model and carry out numerical work to study the localization properties of the model. Our theoretical results are essentially in exact agreement with the numerical results. We calculate the critical exponents δ and β at mobility edges. We also study the nature of the localized, extended eigenstates and mobility edges of this system as a function of λ, α, and ν.

Transcending the slow bimolecular recombination in lead-halide perovskites for electroluminescence

PubMed Central

Xing, Guichuan; Wu, Bo; Wu, Xiangyang; Li, Mingjie; Du, Bin; Wei, Qi; Guo, Jia; Yeow, Edwin K. L.; Sum, Tze Chien; Huang, Wei

2017-01-01

The slow bimolecular recombination that drives three-dimensional lead-halide perovskites' outstanding photovoltaic performance is conversely a fundamental limitation for electroluminescence. Under electroluminescence working conditions with typical charge densities lower than 1015 cm−3, defect-states trapping in three-dimensional perovskites competes effectively with the bimolecular radiative recombination. Herein, we overcome this limitation using van-der-Waals-coupled Ruddlesden-Popper perovskite multi-quantum-wells. Injected charge carriers are rapidly localized from adjacent thin few layer (n≤4) multi-quantum-wells to the thick (n≥5) multi-quantum-wells with extremely high efficiency (over 85%) through quantum coupling. Light emission originates from excitonic recombination in the thick multi-quantum-wells at much higher decay rate and efficiency than bimolecular recombination in three-dimensional perovskites. These multi-quantum-wells retain the simple solution processability and high charge carrier mobility of two-dimensional lead-halide perovskites. Importantly, these Ruddlesden-Popper perovskites offer new functionalities unavailable in single phase constituents, permitting the transcendence of the slow bimolecular recombination bottleneck in lead-halide perovskites for efficient electroluminescence. PMID:28239146

Transcending the slow bimolecular recombination in lead-halide perovskites for electroluminescence.

PubMed

Xing, Guichuan; Wu, Bo; Wu, Xiangyang; Li, Mingjie; Du, Bin; Wei, Qi; Guo, Jia; Yeow, Edwin K L; Sum, Tze Chien; Huang, Wei

2017-02-27

The slow bimolecular recombination that drives three-dimensional lead-halide perovskites' outstanding photovoltaic performance is conversely a fundamental limitation for electroluminescence. Under electroluminescence working conditions with typical charge densities lower than 10 15  cm -3 , defect-states trapping in three-dimensional perovskites competes effectively with the bimolecular radiative recombination. Herein, we overcome this limitation using van-der-Waals-coupled Ruddlesden-Popper perovskite multi-quantum-wells. Injected charge carriers are rapidly localized from adjacent thin few layer (n≤4) multi-quantum-wells to the thick (n≥5) multi-quantum-wells with extremely high efficiency (over 85%) through quantum coupling. Light emission originates from excitonic recombination in the thick multi-quantum-wells at much higher decay rate and efficiency than bimolecular recombination in three-dimensional perovskites. These multi-quantum-wells retain the simple solution processability and high charge carrier mobility of two-dimensional lead-halide perovskites. Importantly, these Ruddlesden-Popper perovskites offer new functionalities unavailable in single phase constituents, permitting the transcendence of the slow bimolecular recombination bottleneck in lead-halide perovskites for efficient electroluminescence.

Two-dimensional capillary electrophoresis: capillary isoelectric focusing and capillary zone electrophoresis with laser-induced fluorescence detection

PubMed Central

Dickerson, Jane A.; Ramsay, Lauren M.; Dada, Oluwatosin O.; Cermak, Nathan

2011-01-01

Capillary isoelectric focusing and capillary zone electrophoresis are coupled with laser-induced fluorescence detection to create an ultrasensitive two-dimensional separation method for proteins. In this method, two capillaries are joined through a buffer filled interface. Separate power supplies control the potential at the injection end of the first capillary and at the interface; the detector is held at ground potential. Proteins are labeled with the fluorogenic reagent Chromeo P503, which preserves the isoelectric point of the labeled protein. The labeled proteins were mixed with ampholytes and injected into the first dimension capillary. A focusing step was performed with the injection end of the capillary at high pH and the interface at low pH. To mobilize components, the interface was filled with a high pH buffer, which was compatible with the second dimension separation. A fraction was transferred to the second dimension capillary for separation. The process of fraction transfer and second dimension separation was repeated two dozen times. The separation produced a spot capacity of 125. PMID:20603830

Exotic Physics and Chemistry of Two-Dimensional Phosphorus: Phosphorene.

PubMed

Chowdhury, Chandra; Datta, Ayan

2017-07-06

Phosphorene, the monolayer form of black phosphorus, is the most recent addition to graphene-like van der Waals two-dimensional (2D) systems. Due to its several interesting properties, namely its tunable direct band gap, high carrier mobility, and unique in-plane anisotropy, it has emerged as a promising candidate for electronic and optoelectronic devices. Phosphorene (Pn) reveals a much richer phase diagram than graphene, and it comprises the two forms namely the stapler-clip like (black Pn, α form) and chairlike (blue Pn, β form) structures. Regardless of its favorable properties, black Pn suffers from instability in oxygen and water, which limits its successful applications in electronic devices. In this Perspective, the cause of structural diversity of Pn, which leads to different properties of both black and blue Pn, is discussed. We provide possible solutions for protecting phosphorene from chemical degradation and its applications in the field of energy storage namely for Li and Na ion batteries.

Magnetofermionic condensate in two dimensions

PubMed Central

Kulik, L. V.; Zhuravlev, A. S.; Dickmann, S.; Gorbunov, A. V.; Timofeev, V. B.; Kukushkin, I. V.; Schmult, S.

2016-01-01

Coherent condensate states of particles obeying either Bose or Fermi statistics are in the focus of interest in modern physics. Here we report on condensation of collective excitations with Bose statistics, cyclotron magnetoexcitons, in a high-mobility two-dimensional electron system in a magnetic field. At low temperatures, the dense non-equilibrium ensemble of long-lived triplet magnetoexcitons exhibits both a drastic reduction in the viscosity and a steep enhancement in the response to the external electromagnetic field. The observed effects are related to formation of a super-absorbing state interacting coherently with the electromagnetic field. Simultaneously, the electrons below the Fermi level form a super-emitting state. The effects are explicable from the viewpoint of a coherent condensate phase in a non-equilibrium system of two-dimensional fermions with a fully quantized energy spectrum. The condensation occurs in the space of vectors of magnetic translations, a property providing a completely new landscape for future physical investigations. PMID:27848969

High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se

NASA Astrophysics Data System (ADS)

Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng; Chen, Cheng; Sun, Yan; Chen, Zhuoyu; Dang, Wenhui; Tan, Congwei; Liu, Yujing; Yin, Jianbo; Zhou, Yubing; Huang, Shaoyun; Xu, H. Q.; Cui, Yi; Hwang, Harold Y.; Liu, Zhongfan; Chen, Yulin; Yan, Binghai; Peng, Hailin

2017-07-01

High-mobility semiconducting ultrathin films form the basis of modern electronics, and may lead to the scalable fabrication of highly performing devices. Because the ultrathin limit cannot be reached for traditional semiconductors, identifying new two-dimensional materials with both high carrier mobility and a large electronic bandgap is a pivotal goal of fundamental research. However, air-stable ultrathin semiconducting materials with superior performances remain elusive at present. Here, we report ultrathin films of non-encapsulated layered Bi2O2Se, grown by chemical vapour deposition, which demonstrate excellent air stability and high-mobility semiconducting behaviour. We observe bandgap values of ˜0.8 eV, which are strongly dependent on the film thickness due to quantum-confinement effects. An ultrahigh Hall mobility value of >20,000 cm2 V-1 s-1 is measured in as-grown Bi2O2Se nanoflakes at low temperatures. This value is comparable to what is observed in graphene grown by chemical vapour deposition and at the LaAlO3-SrTiO3 interface, making the detection of Shubnikov-de Haas quantum oscillations possible. Top-gated field-effect transistors based on Bi2O2Se crystals down to the bilayer limit exhibit high Hall mobility values (up to 450 cm2 V-1 s-1), large current on/off ratios (>106) and near-ideal subthreshold swing values (˜65 mV dec-1) at room temperature. Our results make Bi2O2Se a promising candidate for future high-speed and low-power electronic applications.

Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures.

PubMed

Hamer, Matthew J; Tóvári, Endre; Zhu, Mengjian; Thompson, Michael Dermot; Mayorov, Alexander S; Prance, Jonathan; Lee, Yongjin; Haley, Richard; Kudrynskyi, Zakhar R; Patanè, Amalia; Terry, Daniel; Kovalyuk, Zakhar D; Ensslin, Klaus; Kretinin, Andrey V; Geim, Andre K; Gorbachev, Roman Vladislavovich

2018-05-15

Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.

Conjugated organic framework with three-dimensionally ordered stable structure and delocalized π clouds

PubMed Central

Guo, Jia; Xu, Yanhong; Jin, Shangbin; Chen, Long; Kaji, Toshihiko; Honsho, Yoshihito; Addicoat, Matthew A.; Kim, Jangbae; Saeki, Akinori; Ihee, Hyotcherl; Seki, Shu; Irle, Stephan; Hiramoto, Masahiro; Gao, Jia; Jiang, Donglin

2013-01-01

Covalent organic frameworks are a class of crystalline organic porous materials that can utilize π–π-stacking interactions as a driving force for the crystallization of polygonal sheets to form layered frameworks and ordered pores. However, typical examples are chemically unstable and lack intrasheet π-conjugation, thereby significantly limiting their applications. Here we report a chemically stable, electronically conjugated organic framework with topologically designed wire frameworks and open nanochannels, in which the π conjugation-spans the two-dimensional sheets. Our framework permits inborn periodic ordering of conjugated chains in all three dimensions and exhibits a striking combination of properties: chemical stability, extended π-delocalization, ability to host guest molecules and hole mobility. We show that the π-conjugated organic framework is useful for high on-off ratio photoswitches and photovoltaic cells. Therefore, this strategy may constitute a step towards realizing ordered semiconducting porous materials for innovations based on two-dimensionally extended π systems. PMID:24220603

Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, F.; Gao, K. H., E-mail: khgao@tju.edu.cn; Li, Z. Q.

2015-04-21

We study the effects of GaN interlayer on the transport properties of two-dimensional electron gases confined in lattice-matched AlInN/AlN/GaN heterostructures. It is found that the Hall mobility is evidently enhanced when an additional ultrathin GaN interlayer is introduced between AlInN and AlN layers. The enhancement of the Hall mobility is especially remarkable at low temperature. The high Hall mobility results in a low sheet resistance of 23 Ω/◻ at 2 K. Meanwhile, Shubnikov-de Haas oscillations (SdH) are also remarkably enhanced due to the existence of GaN interlayer. The enhancement of the SdH oscillations is related to the larger quantum mobility μ{sub q}more » owing to the suppression of the interface roughness, alloy disorder, and ionized impurity scatterings by the GaN interlayer.« less

Seagrass-Mediated Phosphorus and Iron Solubilization in Tropical Sediments

PubMed Central

2017-01-01

Tropical seagrasses are nutrient-limited owing to the strong phosphorus fixation capacity of carbonate-rich sediments, yet they form densely vegetated, multispecies meadows in oligotrophic tropical waters. Using a novel combination of high-resolution, two-dimensional chemical imaging of O2, pH, iron, sulfide, calcium, and phosphorus, we found that tropical seagrasses are able to mobilize the essential nutrients iron and phosphorus in their rhizosphere via multiple biogeochemical pathways. We show that tropical seagrasses mobilize phosphorus and iron within their rhizosphere via plant-induced local acidification, leading to dissolution of carbonates and release of phosphate, and via local stimulation of microbial sulfide production, causing reduction of insoluble Fe(III) oxyhydroxides to dissolved Fe(II) with concomitant phosphate release into the rhizosphere porewater. These nutrient mobilization mechanisms have a direct link to seagrass-derived radial O2 loss and secretion of dissolved organic carbon from the below-ground tissue into the rhizosphere. Our demonstration of seagrass-derived rhizospheric phosphorus and iron mobilization explains why seagrasses are widely distributed in oligotrophic tropical waters. PMID:29149570

Lock-and-key dimerization in dense Brownian systems of hard annular sector particles

NASA Astrophysics Data System (ADS)

Hodson, Wade D.; Mason, Thomas G.

2016-08-01

We develop a translational-rotational cage model that describes the behavior of dense two-dimensional (2D) Brownian systems of hard annular sector particles (ASPs), resembling C shapes. At high particle densities, pairs of ASPs can form mutually interdigitating lock-and-key dimers. This cage model considers either one or two mobile central ASPs which can translate and rotate within a static cage of surrounding ASPs that mimics the system's average local structure and density. By comparing with recent measurements made on dispersions of microscale lithographic ASPs [P. Y. Wang and T. G. Mason, J. Am. Chem. Soc. 137, 15308 (2015), 10.1021/jacs.5b10549], we show that mobile two-particle predictions of the probability of dimerization Pdimer, equilibrium constant K , and 2D osmotic pressure Π2 D as a function of the particle area fraction ϕA correspond closely to these experiments. By contrast, predictions based on only a single mobile particle do not agree well with either the two-particle predictions or the experimental data. Thus, we show that collective entropy can play an essential role in the behavior of dense Brownian systems composed of nontrivial hard shapes, such as ASPs.

High-Level Heteroatom Doped Two-Dimensional Carbon Architectures for Highly Efficient Lithium-Ion Storage.

PubMed

Wang, Zhijie; Wang, Yanyan; Wang, Wenhui; Yu, Xiaoliang; Lv, Wei; Xiang, Bin; He, Yan-Bing

2018-01-01

In this work, high-level heteroatom doped two-dimensional hierarchical carbon architectures (H-2D-HCA) are developed for highly efficient Li-ion storage applications. The achieved H-2D-HCA possesses a hierarchical 2D morphology consisting of tiny carbon nanosheets vertically grown on carbon nanoplates and containing a hierarchical porosity with multiscale pore size. More importantly, the H-2D-HCA shows abundant heteroatom functionality, with sulfur (S) doping of 0.9% and nitrogen (N) doping of as high as 15.5%, in which the electrochemically active N accounts for 84% of total N heteroatoms. In addition, the H-2D-HCA also has an expanded interlayer distance of 0.368 nm. When used as lithium-ion battery anodes, it shows excellent Li-ion storage performance. Even at a high current density of 5 A g -1 , it still delivers a high discharge capacity of 329 mA h g -1 after 1,000 cycles. First principle calculations verifies that such unique microstructure characteristics and high-level heteroatom doping nature can enhance Li adsorption stability, electronic conductivity and Li diffusion mobility of carbon nanomaterials. Therefore, the H-2D-HCA could be promising candidates for next-generation LIB anodes.

High-Level Heteroatom Doped Two-Dimensional Carbon Architectures for Highly Efficient Lithium-Ion Storage

NASA Astrophysics Data System (ADS)

Wang, Zhijie; Wang, Yanyan; Wang, Wenhui; Yu, Xiaoliang; Lv, Wei; Xiang, Bin; He, Yan-Bing

2018-04-01

In this work, high-level heteroatom doped two-dimensional hierarchical carbon architectures (H-2D-HCA) are developed for highly efficient Li-ion storage applications. The achieved H-2D-HCA possesses a hierarchical 2D morphology consisting of tiny carbon nanosheets vertically grown on carbon nanoplates and containing a hierarchical porosity with multiscale pore size. More importantly, the H-2D-HCA shows abundant heteroatom functionality, with sulfur (S) doping of 0.9 % and nitrogen (N) doping of as high as 15.5 %, in which the electrochemically active N accounts for 84 % of total N heteroatoms. In addition, the H-2D-HCA also has an expanded interlayer distance of 0.368 nm. When used as lithium-ion battery anodes, it shows excellent Li-ion storage performance. Even at a high current density of 5 A g-1, it still delivered a high discharge capacity of 329 mA h g-1 after 1000 cycles. First principle calculations verified that such unique microstructure characteristics and high-level heteroatom doping nature can enhance Li adsorption stability, electronic conductivity and Li diffusion mobility of carbon nanomaterials. Therefore, the H-2D-HCA could be promising candidates for next-generation LIB anodes.

Hybrid Black Phosphorus/Zero-Dimensional Quantum Dot Phototransistors: Tunable Photodoping and Enhanced Photoresponsivity.

PubMed

Lee, A-Young; Ra, Hyun-Soo; Kwak, Do-Hyun; Jeong, Min-Hye; Park, Jeong-Hyun; Kang, Yeon-Su; Chae, Weon-Sik; Lee, Jong-Soo

2018-05-09

Recently, black phosphorus (BP) with direct band gap exhibited excellent potential for optoelectronic applications because of its high charge carrier mobility and low dark current as well as the variable band gap of 0.3-1.5 eV depending on the number of layers. However, few-layer BP-based phototransistors (photo-FETs) have been limited in sensitivity and wavelength selectivity. To overcome the drawback of these photo-FETs, we studied hybrid photo-FETs combined with the novel properties of the two materials between the channel and sensitizer layers. By combining a strong absorbance of a quantum dot (QD) layer and a two-dimensional layer material with high carrier mobility, the hybrid photo-FETs are expected to produce high-performance photodetectors that can effectively control the responsivity, detectivity, and response time. In this study, we demonstrate that the photogenerated carriers formed from QD sensitizer layers migrate to the BP transport layer with high charge mobility and not only improve the photodetector performance but also enhance the photodoping effect of the BP transport layer with an ambipolar characteristic by electrons transferred from n-type CdSe QDs or holes injected from p-type PbS QDs. The responsivity and detectivity of hybrid BP/0D photo-FETs exhibit 1.16 × 10 9 A W -1 and 7.53 × 10 16 Jones for the BP/CdSe QD photo-FET and 5.36 × 10 8 A W -1 and 1.89 × 10 16 Jones for the BP/PbS QD photo-FET, respectively. The photocurrent rise (τ rise ) and decay (τ decay ) times were τ rise = 0.406 s and τ decay = 0.815 s for BP/CdSe QD photo-FET and τ rise = 0.576 s and τ decay = 0.773 s for BP/PbS QD photo-FET, respectively.

Photo-excited zero-resistance states in quasi-two-dimensional GaAs / Al xGa 1- xAs devices

NASA Astrophysics Data System (ADS)

Mani, R. G.

2007-12-01

We illustrate some experimental features of the recently discovered radiation-induced zero-resistance states in the high-mobility GaAs/AlGaAs system, with a special emphasis on the interplay between the radiation-induced changes in the diagonal resistance and the Hall effect. We show that, quantum Hall effects, i.e., quantum Hall plateaus, disappear under photoexcitation, at the minima of the radiation-induced magnetoresistance oscillations.

Two-dimensional electron gases in MgZnO/ZnO and ZnO/MgZnO/ZnO heterostructures grown by dual ion beam sputtering

NASA Astrophysics Data System (ADS)

Singh, Rohit; Arif Khan, Md; Sharma, Pankaj; Than Htay, Myo; Kranti, Abhinav; Mukherjee, Shaibal

2018-04-01

This work reports on the formation of high-density (~1013-1014 cm-2) two-dimensional electron gas (2DEG) in ZnO-based heterostructures, grown by a dual ion beam sputtering system. We probe 2DEG in bilayer MgZnO/ZnO and capped ZnO/MgZnO/ZnO heterostructures utilizing MgZnO barrier layers with varying thickness and Mg content. The effect of the ZnO cap layer thickness on the ZnO/MgZnO/ZnO heterostructure is also studied. Hall measurements demonstrate that the addition of a 5 nm ZnO cap layer results in an enhancement of the 2DEG density by about 1.5 times compared to 1.11 × 1014 cm-2 for the uncapped bilayer heterostructure with the same 30 nm barrier thickness and 30 at.% Mg composition in the barrier layer. From the low-temperature Hall measurement, the sheet carrier concentration and mobility are both found to be independent of the temperature. The capacitance-voltage measurement suggests a carrier density of ~1020 cm-3, confined in 2DEG at the MgZnO/ZnO heterointerface. The results presented are significant for the optimization of 2DEG for the eventual realization of cost-effective and large-area MgZnO/ZnO-based high-electron-mobility transistors.

Method of multi-dimensional moment analysis for the characterization of signal peaks

DOEpatents

Pfeifer, Kent B; Yelton, William G; Kerr, Dayle R; Bouchier, Francis A

2012-10-23

A method of multi-dimensional moment analysis for the characterization of signal peaks can be used to optimize the operation of an analytical system. With a two-dimensional Peclet analysis, the quality and signal fidelity of peaks in a two-dimensional experimental space can be analyzed and scored. This method is particularly useful in determining optimum operational parameters for an analytical system which requires the automated analysis of large numbers of analyte data peaks. For example, the method can be used to optimize analytical systems including an ion mobility spectrometer that uses a temperature stepped desorption technique for the detection of explosive mixtures.

Intrinsic Electron Mobility Exceeding 10³ cm²/(V s) in Multilayer InSe FETs.

PubMed

Sucharitakul, Sukrit; Goble, Nicholas J; Kumar, U Rajesh; Sankar, Raman; Bogorad, Zachary A; Chou, Fang-Cheng; Chen, Yit-Tsong; Gao, Xuan P A

2015-06-10

Graphene-like two-dimensional (2D) materials not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also hold promises for device miniaturization down to atomic thickness. As one material belonging to this category, InSe, a III-VI semiconductor, not only is a promising candidate for optoelectronic devices but also has potential for ultrathin field effect transistor (FET) with high mobility transport. In this work, various substrates such as PMMA, bare silicon oxide, passivated silicon oxide, and silicon nitride were used to fabricate multilayer InSe FET devices. Through back gating and Hall measurement in four-probe configuration, the device's field effect mobility and intrinsic Hall mobility were extracted at various temperatures to study the material's intrinsic transport behavior and the effect of dielectric substrate. The sample's field effect and Hall mobilities over the range of 20-300 K fall in the range of 0.1-2.0 × 10(3) cm(2)/(V s), which are comparable or better than the state of the art FETs made of widely studied 2D transition metal dichalcogenides.

Enhanced carrier mobility of multilayer MoS2 thin-film transistors by Al2O3 encapsulation

NASA Astrophysics Data System (ADS)

Kim, Seong Yeoul; Park, Seonyoung; Choi, Woong

2016-10-01

We report the effect of Al2O3 encapsulation on the carrier mobility and contact resistance of multilayer MoS2 thin-film transistors by statistically investigating 70 devices with SiO2 bottom-gate dielectric. After Al2O3 encapsulation by atomic layer deposition, calculation based on Y-function method indicates that the enhancement of carrier mobility from 24.3 cm2 V-1 s-1 to 41.2 cm2 V-1 s-1 occurs independently from the reduction of contact resistance from 276 kΩ.μm to 118 kΩ.μm. Furthermore, contrary to the previous literature, we observe a negligible effect of thermal annealing on contact resistance and carrier mobility during the atomic layer deposition of Al2O3. These results demonstrate that Al2O3 encapsulation is a useful method of improving the carrier mobility of multilayer MoS2 transistors, providing important implications on the application of MoS2 and other two-dimensional materials into high-performance transistors.

Anomalous Quasiparticle Reflection from the Surface of a ^{3}He-^{4}He Dilute Solution.

PubMed

Ikegami, Hiroki; Kim, Kitak; Sato, Daisuke; Kono, Kimitoshi; Choi, Hyoungsoon; Monarkha, Yuriy P

2017-11-10

A free surface of a dilute ^{3}He-^{4}He liquid mixture is a unique system where two Fermi liquids with distinct dimensions coexist: a three-dimensional (3D) ^{3}He Fermi liquid in the bulk and a two-dimensional (2D) ^{3}He Fermi liquid at the surface. To investigate a novel effect generated by the interaction between the two Fermi liquids, the mobility of a Wigner crystal of electrons formed on the free surface of the mixture is studied. An anomalous enhancement of the mobility, compared with the case where the 3D and 2D systems do not interact with each other, is observed. The enhancement is explained by the nontrivial reflection of 3D quasiparticles from the surface covered with the 2D ^{3}He system.

Robotic vehicle with multiple tracked mobility platforms

DOEpatents

Salton, Jonathan R [Albuquerque, NM; Buttz, James H [Albuquerque, NM; Garretson, Justin [Albuquerque, NM; Hayward, David R [Wetmore, CO; Hobart, Clinton G [Albuquerque, NM; Deuel, Jr., Jamieson K.

2012-07-24

A robotic vehicle having two or more tracked mobility platforms that are mechanically linked together with a two-dimensional coupling, thereby forming a composite vehicle of increased mobility. The robotic vehicle is operative in hazardous environments and can be capable of semi-submersible operation. The robotic vehicle is capable of remote controlled operation via radio frequency and/or fiber optic communication link to a remote operator control unit. The tracks have a plurality of track-edge scallop cut-outs that allow the tracks to easily grab onto and roll across railroad tracks, especially when crossing the railroad tracks at an oblique angle.

Carbon phosphide monolayers with superior carrier mobility

NASA Astrophysics Data System (ADS)

Wang, Gaoxue; Pandey, Ravindra; Karna, Shashi P.

2016-04-01

Two dimensional (2D) materials with a finite band gap and high carrier mobility are sought after materials from both fundamental and technological perspectives. In this paper, we present the results based on the particle swarm optimization method and density functional theory which predict three geometrically different phases of the carbon phosphide (CP) monolayer consisting of sp2 hybridized C atoms and sp3 hybridized P atoms in hexagonal networks. Two of the phases, referred to as α-CP and β-CP with puckered or buckled surfaces are semiconducting with highly anisotropic electronic and mechanical properties. More remarkably, they have the lightest electrons and holes among the known 2D semiconductors, yielding superior carrier mobility. The γ-CP has a distorted hexagonal network and exhibits a semi-metallic behavior with Dirac cones. These theoretical findings suggest that the binary CP monolayer is a yet unexplored 2D material holding great promise for applications in high-performance electronics and optoelectronics.Two dimensional (2D) materials with a finite band gap and high carrier mobility are sought after materials from both fundamental and technological perspectives. In this paper, we present the results based on the particle swarm optimization method and density functional theory which predict three geometrically different phases of the carbon phosphide (CP) monolayer consisting of sp2 hybridized C atoms and sp3 hybridized P atoms in hexagonal networks. Two of the phases, referred to as α-CP and β-CP with puckered or buckled surfaces are semiconducting with highly anisotropic electronic and mechanical properties. More remarkably, they have the lightest electrons and holes among the known 2D semiconductors, yielding superior carrier mobility. The γ-CP has a distorted hexagonal network and exhibits a semi-metallic behavior with Dirac cones. These theoretical findings suggest that the binary CP monolayer is a yet unexplored 2D material holding great promise for applications in high-performance electronics and optoelectronics. Electronic supplementary information (ESI) available: Fig. S1 cohesive energy and structure of the CP monolayer with various stoichiometric compositions obtained using CALYPSO, Fig. S2 history of CALYPSO steps and structure of the CP monolayer, Fig. S3 phonon dispersion with DFT-D2 functional, Fig. S4 band structure for β-CP using the DFT-PBE and DFT-D2 functional forms, Fig. S5 strain energy curves, Fig. S6 projected band structure for α-CP, Fig. S7 projected band structure for β-CP, Fig. S8 projected band structure for γ-CP, Fig. S9 band structures obtained with the GGA-PBE and HSE06 functional; Table S1 lattice parameters with the DFT-D2 functional form; Video S1 AIMD simulation of α-CP at 300 K, Video S2 AIMD simulation of β-CP at 300 K, Video S3 AIMD simulation of γ-CP at 300 K. See DOI: 10.1039/c6nr00498a

Color intensity projections: A rapid approach for evaluating four-dimensional CT scans in treatment planning

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cover, Keith S.; Lagerwaard, Frank J.; Senan, Suresh

2006-03-01

Purpose: Four-dimensional computerized tomography scans (4DCT) enable intrafractional motion to be determined. Because more than 1500 images can be generated with each 4DCT study, tools for efficient data visualization and evaluation are needed. We describe the use of color intensity projections (CIP) for visualizing mobility. Methods: Four-dimensional computerized tomography images of each patient slice were combined into a CIP composite image. Pixels largely unchanged over the component images appear unchanged in the CIP image. However, pixels whose intensity changes over the phases of the 4DCT appear in the CIP image as colored pixels, and the hue encodes the percentage ofmore » time the tissue was in each location. CIPs of 18 patients were used to study tumor and surrogate markers, namely the diaphragm and an abdominal marker block. Results: Color intensity projections permitted mobility of high-contrast features to be quickly visualized and measured. In three selected expiratory phases ('gating phases') that were reviewed in the sagittal plane, gating would have reduced mean tumor mobility from 6.3 {+-} 2.0 mm to 1.4 {+-} 0.5 mm. Residual tumor mobility in gating phases better correlated with residual mobility of the marker block than that of the diaphragm. Conclusion: CIPs permit immediate visualization of mobility in 4DCT images and simplify the selection of appropriate surrogates for gated radiotherapy.« less

High-mobility hydrogen-terminated Si(111) transistors for measurement of six-fold valley degenerate two-dimensional electron systems in fractional quantum Hall regime

NASA Astrophysics Data System (ADS)

Hu, Binhui; Yazdanpanah, Mohamad Meqdad; Kane, Bruce E.

2015-03-01

The quality of hydrogen-terminated Si(111) (H-Si(111)) transistors has improved significantly. Peak electron mobility of 325,000 cm2/Vs was achieved at 90 mK, and the fractional quantum Hall effect (FQHE) at 1 < ν < 2 was studied extensively. We have further improved the device by solving gate leakage and contact problems with an updated design, in which a Si piece with thermal oxide acts as a gate through a vacuum cavity, and PN junctions are used to define a hexagonal two-dimensional (2D) region on a H-Si(111) piece. The device operates as an ambipolar transistor, in which a 2D electron system (2DES) and a 2D hole system can be induced at the same H-Si(111) surface. Peak electron mobility of more than 200,000 cm2/Vs is routinely achieved at 300 mK. The Si(111) surface has a six-fold valley degeneracy. The hexagonal device is designed to investigate the symmetry of the 2DES. Preliminary data show that the transport anisotropy at ν < 6 can be explained by the valley occupancy. The details of the valley occupancy can be caused by several mechanisms, such as miscut, magnetic field, pseudospin quantum Hall ferromagnetism (QHFM), and nematic valley polarization phases. The FQHE is investigated in magnetic fields up to 35T, and the properties of composite fermions will be discussed.

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

NASA Astrophysics Data System (ADS)

Deen, David A.; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J.

2016-08-01

A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics ft/fmax of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with ft/fmax of 48/60 GHz.

Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

NASA Technical Reports Server (NTRS)

Freeman, Jon C.

2003-01-01

Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

The Relative Importance of Motives for International Self-Initiated Mobility

ERIC Educational Resources Information Center

Thorn, Kaye

2009-01-01

Purpose: This paper aims to explore the relative importance of the motives and sub-motives which influence a highly educated individual's decision to move across global boundaries. Design/methodology/approach: The approach takes a multi-dimensional perspective of mobility, resulting in the development of a range of motives for self-initiated…

Mobility spectrum analytical approach for intrinsic band picture of Ba(FeAs)2

NASA Astrophysics Data System (ADS)

Huynh, K. K.; Tanabe, Y.; Urata, T.; Heguri, S.; Tanigaki, K.; Kida, T.; Hagiwara, M.

2014-09-01

Unconventional high temperature superconductivity as well as three-dimensional bulk Dirac cone quantum states arising from the unique d-orbital topology have comprised an intriguing research area in physics. Here we apply a special analytical approach using a mobility spectrum, in which the carrier number is conveniently described as a function of mobility without any hypothesis, both on the types and the numbers of carriers, for the interpretations of longitudinal and transverse electric transport of high quality single crystal Ba(FeAs)2 in a wide range of magnetic fields. We show that the majority carriers are accommodated in large parabolic hole and electron pockets with very different topology as well as remarkably different mobility spectra, whereas the minority carriers reside in Dirac quantum states with the largest mobility as high as 70,000 cm2(Vs)-1. The deduced mobility spectra are discussed and compared to the reported sophisticated first principle band calculations.

Anisotropic elastic scattering of stripe/line-shaped scatters to two-dimensional electron gas: Model and illustrations in a nonpolar AlGaN/GaN hetero-junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jinfeng, E-mail: jfzhang@xidian.edu.cn; Li, Yao; Yan, Ran

In a semiconductor hetero-junction, the stripe/line-shaped scatters located at the hetero-interface lead to the anisotropic transport of two-dimensional electron gas (2DEG). The elastic scattering of infinitely long and uniform stripe/line-shaped scatters to 2DEG is theoretically investigated based on a general theory of anisotropic 2DEG transport [J. Schliemann and D. Loss, Phys. Rev. B 68(16), 165311 (2003)], and the resulting 2DEG mobility along the applied electrical field is modeled to be a function of the angle between the field and the scatters. The anisotropy of the scattering and the mobility originate in essence from that the stripe/line-shaped scatters act upon themore » injecting two-dimensional wave vector by changing only its component perpendicular to the scatters. Three related scattering mechanisms in a nonpolar AlGaN/GaN hetero-junction are discussed as illustrations, including the striated morphology caused interface roughness scattering, and the polarization induced line charge dipole scattering and the misfit dislocation scattering at the AlGaN/GaN interface. Different anisotropic behaviors of the mobility limited by these scattering mechanisms are demonstrated, but analysis shows that all of them are determined by the combined effects of the anisotropic bare scattering potential and the anisotropic dielectric response of the 2DEG.« less

Theory of magnetothermoelectric phenomena in high-mobility two-dimensional electron systems under microwave irradiation

NASA Astrophysics Data System (ADS)

Raichev, O. E.

2015-06-01

The response of two-dimensional electron gas to a temperature gradient in perpendicular magnetic field under steady-state microwave irradiation is studied theoretically. The electric currents induced by the temperature gradient and the thermopower coefficients are calculated taking into account both diffusive and phonon-drag mechanisms. The modification of thermopower by microwaves takes place because of Landau quantization of the electron energy spectrum and is governed by the microscopic mechanisms which are similar to those responsible for microwave-induced oscillations of electrical resistivity. The magnetic-field dependence of microwave-induced corrections to phonon-drag thermopower is determined by mixing of phonon resonance frequencies with radiation frequency, which leads to interference oscillations. The transverse thermopower is modified by microwave irradiation much stronger than the longitudinal one. Apart from showing prominent microwave-induced oscillations as a function of magnetic field, the transverse thermopower appears to be highly sensitive to the direction of linear polarization of microwave radiation.

DryLab® optimised two-dimensional high performance liquid chromatography for differentiation of ephedrine and pseudoephedrine based methamphetamine samples.

PubMed

Andrighetto, Luke M; Stevenson, Paul G; Pearson, James R; Henderson, Luke C; Conlan, Xavier A

2014-11-01

In-silico optimised two-dimensional high performance liquid chromatographic (2D-HPLC) separations of a model methamphetamine seizure sample are described, where an excellent match between simulated and real separations was observed. Targeted separation of model compounds was completed with significantly reduced method development time. This separation was completed in the heart-cutting mode of 2D-HPLC where C18 columns were used in both dimensions taking advantage of the selectivity difference of methanol and acetonitrile as the mobile phases. This method development protocol is most significant when optimising the separation of chemically similar chemical compounds as it eliminates potentially hours of trial and error injections to identify the optimised experimental conditions. After only four screening injections the gradient profile for both 2D-HPLC dimensions could be optimised via simulations, ensuring the baseline resolution of diastereomers (ephedrine and pseudoephedrine) in 9.7 min. Depending on which diastereomer is present the potential synthetic pathway can be categorized.

Giant microwave-induced B -periodic magnetoresistance oscillations in a two-dimensional electron gas with a bridged-gate tunnel point contact

NASA Astrophysics Data System (ADS)

Levin, A. D.; Mikhailov, S. A.; Gusev, G. M.; Kvon, Z. D.; Rodyakina, E. E.; Latyshev, A. V.

2017-02-01

We have studied the magnetoresistance of a quantum point contact fabricated on a high mobility two-dimensional electron gas (2DEG) exposed to microwave irradiation. The resistance reveals giant B -periodic oscillations with a relative amplitude Δ R /R of up to 700 % resulting from the propagation and interference of the edge magnetoplasmons (EMPs) in the sample. This giant photoconductance is attributed to the considerably large local electron density modulation in the vicinity of the point contact. We have also analyzed the oscillation periods Δ B of the resistance oscillations and, comparing the data with the EMP theory, extracted the EMP interference length L . We have found that the length L substantially exceeds the distance between the contact leads, and rather corresponds to the distance between metallic contact pads measured along the edge of the 2DEG. This resolves existing controversy in the literature and should help to properly design highly sensitive microwave and terahertz spectrometers based on the discussed effect.

Two dimensional simulation of patternable conducting polymer electrode based organic thin film transistor

NASA Astrophysics Data System (ADS)

Nair, Shiny; Kathiresan, M.; Mukundan, T.

2018-02-01

Device characteristics of organic thin film transistor (OTFT) fabricated with conducting polyaniline:polystyrene sulphonic acid (PANi-PSS) electrodes, patterned by the Parylene lift-off method are systematically analyzed by way of two dimensional numerical simulation. The device simulation was performed taking into account field-dependent mobility, low mobility layer at the electrode-semiconductor interface, trap distribution in pentacene film and trapped charge at the organic/insulator interface. The electrical characteristics of bottom contact thin film transistor with PANi-PSS electrodes and pentacene active material is superior to those with palladium electrodes due to a lower charge injection barrier. Contact resistance was extracted in both cases by the transfer line method (TLM). The extracted charge concentration and potential profile from the two dimensional numerical simulation was used to explain the observed electrical characteristics. The simulated device characteristics not only matched the experimental electrical characteristics, but also gave an insight on the charge injection, transport and trap properties of the OTFTs as a function of different electrode materials from the perspectives of transistor operation.

'Agglutination and flocculation' of stem cells collected by apheresis due to cryofibrinogen.

PubMed

Siegenthaler, M A; Vu, D-H; Ebnöther, M; Ketterer, N; Luthi, F; Schmid, P; Bargetzi, M; Gasparini, D; Tissot, J-D

2004-04-01

Collection of peripheral stem cells by apheresis is a well-described process. Here, investigations concerning 'agglutination and flocculation' of stem cells collected from two patients are described. In both cases, cryoproteins were observed and cryofibrinogen was identified using high-resolution two-dimensional electrophoresis. In one case, peripheral stem cells were collected after a second course of mobilization, and the cells were immediately washed at 37 degrees C before being frozen, allowing their use, despite the presence of cryofibrinogen. In the other case, 'agglutination' was reversed by warming the bag, and plasma was removed before freezing.

In-plane g factor of low-density two-dimensional holes in a Ge quantum well.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Tzu-Ming; Harris, Charles Thomas; Huang, Shih-Hsien

High-mobility two-dimensional (2D) holes residing in a Ge quantum well are a new electronic system with potentials in quantum computing and spintronics. Since for any electronic material, the effective mass and the g factor are two fundamental material parameters that determine the material response to electric and magnetic fields, measuring these two parameters in this material system is thus an important task that needs to be completed urgently. Because of the quantum confinement in the crystal growth direction (z), the biaxial strain of epitaxial Ge on SiGe, and the valance band nature, both the effective mass and the g factormore » can show very strong anisotropy. In particular, the in-plane g factor (g ip) can be vanishingly small while the perpendicular g factor (g z) can be much larger than 2. Here we report the measurement of g ip at very low hole densities using in-plane magneto-resistance measurement performed at the NHMFL.« less

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

PubMed Central

Tian, He; Tan, Zhen; Wu, Can; Wang, Xiaomu; Mohammad, Mohammad Ali; Xie, Dan; Yang, Yi; Wang, Jing; Li, Lain-Jong; Xu, Jun; Ren, Tian-Ling

2014-01-01

Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5–20 cm2/V·s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V·s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics. PMID:25109609

PdSe2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics.

PubMed

Oyedele, Akinola D; Yang, Shize; Liang, Liangbo; Puretzky, Alexander A; Wang, Kai; Zhang, Jingjie; Yu, Peng; Pudasaini, Pushpa R; Ghosh, Avik W; Liu, Zheng; Rouleau, Christopher M; Sumpter, Bobby G; Chisholm, Matthew F; Zhou, Wu; Rack, Philip D; Geohegan, David B; Xiao, Kai

2017-10-11

Most studied two-dimensional (2D) materials exhibit isotropic behavior due to high lattice symmetry; however, lower-symmetry 2D materials such as phosphorene and other elemental 2D materials exhibit very interesting anisotropic properties. In this work, we report the atomic structure, electronic properties, and vibrational modes of few-layered PdSe 2 exfoliated from bulk crystals, a pentagonal 2D layered noble transition metal dichalcogenide with a puckered morphology that is air-stable. Micro-absorption optical spectroscopy and first-principles calculations reveal a wide band gap variation in this material from 0 (bulk) to 1.3 eV (monolayer). The Raman-active vibrational modes of PdSe 2 were identified using polarized Raman spectroscopy, and a strong interlayer interaction was revealed from large, thickness-dependent Raman peak shifts, agreeing with first-principles Raman simulations. Field-effect transistors made from the few-layer PdSe 2 display tunable ambipolar charge carrier conduction with a high electron field-effect mobility of ∼158 cm 2 V -1 s -1 , indicating the promise of this anisotropic, air-stable, pentagonal 2D material for 2D electronics.

Charge carrier mobility in a two-phase disordered organic system in the low-carrier concentration regime

NASA Astrophysics Data System (ADS)

Woellner, Cristiano F.; Li, Zi; Freire, José A.; Lu, Gang; Nguyen, Thuc-Quyen

2013-09-01

In this paper we use a three-dimensional Pauli master equation to investigate the charge carrier mobility of a two-phase system which can mimic donor-acceptor and amorphous-crystalline bulk heterojunctions. By taking the energetic disorder of each phase, their energy offset, and domain morphology into consideration, we show that the carrier mobility can have a completely different behavior when compared to a one-phase system. When the energy offset is equal to zero, the mobility is controlled by the more disordered phase. When the energy offset is nonzero, we show that the mobility electric field dependence switches from negative to positive at a threshold field proportional to the energy offset. Additionally, the influence of morphology, through the domain size and volume ratio parameters, on the transport is investigated and an approximate analytical expression for the zero field mobility is provided.

Top-down Fabrication and Enhanced Active Area Electronic Characteristics of Amorphous Oxide Nanoribbons for Flexible Electronics.

PubMed

Jang, Hyun-June; Joong Lee, Ki; Jo, Kwang-Won; Katz, Howard E; Cho, Won-Ju; Shin, Yong-Beom

2017-07-18

Inorganic amorphous oxide semiconductor (AOS) materials such as amorphous InGaZnO (a-IGZO) possess mechanical flexibility and outstanding electrical properties, and have generated great interest for use in flexible and transparent electronic devices. In the past, however, AOS devices required higher activation energies, and hence higher processing temperatures, than organic ones to neutralize defects. It is well known that one-dimensional nanowires tend to have better carrier mobility and mechanical strength along with fewer defects than the corresponding two-dimensional films, but until now it has been difficult, costly, and impractical to fabricate such nanowires in proper alignments by either "bottom-up" growth techniques or by "top-down" e-beam lithography. Here we show a top-down, cost-effective, and scalable approach for the fabrication of parallel, laterally oriented AOS nanoribbons based on lift-off and nano-imprinting. High mobility (132 cm 2 /Vs), electrical stability, and transparency are obtained in a-IGZO nanoribbons, compared to the planar films of the same a-IGZO semiconductor.

High-resolution proton nuclear magnetic resonance characterization of seminolipid from bovine spermatozoa.

PubMed

Alvarez, J G; Storey, B T; Hemling, M L; Grob, R L

1990-06-01

The high-resolution one- and two-dimensional proton nuclear magnetic resonance (1H-NMR) characterization of seminolipid from bovine spermatozoa is presented. The 1H-NMR data was confirmed by gas-liquid chromatography-mass spectrometric analysis of the partially methylated alditol acetates of the sugar unit, mild alkaline methanolysis of the glyceryl ester, mobility on normal phase and diphasic thin-layer chromatography (HPTLC), and fast atom bombardment mass spectrometry (FAB-MS). The structure of the molecule corresponds to 1-O-hexadecyl-2-O-hexadecanoyl-3-O-beta-D-(3'-sulfo)-galactopyranosyl- sn-glycerol.

Defect inspection of actuator lenses using swept-source optical coherence tomography

NASA Astrophysics Data System (ADS)

Lee, Jaeyul; Shirazi, Muhammad Faizan; Park, Kibeom; Jeon, Mansik; Kim, Jeehyun

2017-12-01

Actuator lens industries have gained an enormous interest with the enhancement of various latest communication devices, such as mobile phone and notebooks. The quality of the aforementioned devices can be degraded due to the internal defects of actuator lenses. Therefore, in this study, we implemented swept-source optical coherence tomography (SS-OCT) system to inspect defects of actuator lenses. Owing to the high-resolution of the SS-OCT system, defected foreign substances between the actuator lenses, defective regions of lenses and surface stains were more clearly distinguished through three-dimensional (3D) and two-dimensional (2D) cross-sectional OCT images. Therefore, the implemented SS-OCT system can be considered as a potential application to defect inspection of actuator lens.

Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates

NASA Astrophysics Data System (ADS)

Wang, Hui; Wang, Ning; Jiang, Ling-Li; Zhao, Hai-Yue; Lin, Xin-Peng; Yu, Hong-Yu

2017-11-01

In this work, the charge storage based split floating gates (FGs) enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are studied. The simulation results reveal that under certain density of two dimensional electron gas, the variation tendency of the threshold voltage (Vth) with the variation of the blocking dielectric thickness depends on the FG charge density. It is found that when the length sum and isolating spacing sum of the FGs both remain unchanged, the Vth shall decrease with the increasing FGs number but maintaining the device as E-mode. It is also reported that for the FGs HEMT, the failure of a FG will lead to the decrease of Vth as well as the increase of drain current, and the failure probability can be improved significantly with the increase of FGs number.

A quasi-classical mechanism for microwave induced resistance oscillations in high mobility GaAs/AlGaAs 2DEG samples

NASA Astrophysics Data System (ADS)

Studenikin, S. A.; Fedorych, O. N.; Maude, D. K.; Potemski, M.; Sachrajda, A. S.; Wasilewski, Z. R.; Gupta, J. A.; Magarill, L. I.

2008-03-01

In this work we investigate microwave induced resistance oscillations (MIROs) in a GaAs/AlGaAs heterostructure containing a high mobility two-dimensional electron gas (2DEG). We show that MIROs can be explained within a purely classical mechanism based on the Boltzmann equation [L.I. Magarill, I.A. Panaev, S.A. Studenikin, Condens. Matter 7 (1995) 1101]. The MIRO-related transitions can be observed in absorption and we demonstrate it experimentally for the first time using EPR-cavity absorption technique. Next we investigate MIROs and Shubnikov-de Haas (SdH) oscillations at milli-Kelvin temperatures. We find that MIROs persist to approximately three times lower magnetic field as compared with the SdH oscillations, which at temperatures below 50 mK are defined purely by the quantum relaxation time. This finding indicates a possible quasi-classical origin of MIROs.

Quantum Hall effect in a bulk antiferromagnet EuMnBi2 with magnetically confined two-dimensional Dirac fermions.

PubMed

Masuda, Hidetoshi; Sakai, Hideaki; Tokunaga, Masashi; Yamasaki, Yuichi; Miyake, Atsushi; Shiogai, Junichi; Nakamura, Shintaro; Awaji, Satoshi; Tsukazaki, Atsushi; Nakao, Hironori; Murakami, Youichi; Arima, Taka-hisa; Tokura, Yoshinori; Ishiwata, Shintaro

2016-01-01

For the innovation of spintronic technologies, Dirac materials, in which low-energy excitation is described as relativistic Dirac fermions, are one of the most promising systems because of the fascinating magnetotransport associated with extremely high mobility. To incorporate Dirac fermions into spintronic applications, their quantum transport phenomena are desired to be manipulated to a large extent by magnetic order in a solid. We report a bulk half-integer quantum Hall effect in a layered antiferromagnet EuMnBi2, in which field-controllable Eu magnetic order significantly suppresses the interlayer coupling between the Bi layers with Dirac fermions. In addition to the high mobility of more than 10,000 cm(2)/V s, Landau level splittings presumably due to the lifting of spin and valley degeneracy are noticeable even in a bulk magnet. These results will pave a route to the engineering of magnetically functionalized Dirac materials.

Mobility in excess of 106 cm2/V s in InAs quantum wells grown on lattice mismatched InP substrates

NASA Astrophysics Data System (ADS)

Hatke, A. T.; Wang, T.; Thomas, C.; Gardner, G. C.; Manfra, M. J.

2017-10-01

We investigate the transport properties of a two-dimensional electron gas residing in strained composite quantum wells of In0.75Ga0.25As/InAs/In0.75Ga0.25As cladded with In0.75Al0.25As barriers grown metamorphically on insulating InP substrates. By optimizing the widths of the In0.75Ga0.25As layers, the In0.75Al0.25As barrier, and the InAs quantum well, we demonstrate mobility in excess of 1 ×106 cm2/V s. Mobility vs. density data indicate that scattering is dominated by a residual three dimensional distribution of charged impurities. We extract the effective Rashba parameter and spin-orbit length for these composite quantum wells.

N-Functionalized MXenes: ultrahigh carrier mobility and multifunctional properties.

PubMed

Shao, Yangfan; Zhang, Fang; Shi, Xingqiang; Pan, Hui

2017-11-01

Two dimensional (2D) nanomaterials have demonstrated huge potential in wide applications from nanodevices to energy harvesting/storage. In this work, we propose a new class of 2D monolayers, nitrogen-functionalized MXenes (Nb 2 CN 2 and Ta 2 CN 2 ), based on density-functional theory (DFT). We find that these monolayers are direct semiconductors with near linear energy dispersions at the Γ point. M 2 CN 2 monolayers have significant small effective mass and show an ultra-high mobility of up to 10 6 cm 2 V -1 s -1 . We show that the electronic structures of the M 2 CN 2 monolayers can be easily controlled by biaxial and uniaxial strains. Importantly, the carrier mobility and direct band gap can be dramatically increased within a certain range of strain. A direct-indirect band gap transition can be triggered and the band gap can be tuned under strain. The tunable electronic properties are attributed to the structural changes and charge redistribution under stain. Our findings demonstrate that N-functionalized MXenes are promising materials for nanodevices with high speed and low power.

Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure.

PubMed

Ding, Yi-Min; Shi, Jun-Jie; Xia, Congxin; Zhang, Min; Du, Juan; Huang, Pu; Wu, Meng; Wang, Hui; Cen, Yu-Lang; Pan, Shu-Hang

2017-10-05

To enhance the low hole mobility (∼40 cm 2 V -1 s -1 ) of InSe monolayer, a novel two-dimensional (2D) van der Waals heterostructure made of InSe and black phosphorus (BP) monolayers with high hole mobility (∼10 3 cm 2 V -1 s -1 ) has been constructed and its structural and electronic properties are investigated using first-principles calculations. We find that the InSe/BP heterostructure exhibits a direct band gap of 1.39 eV and type-II band alignment with electrons (holes) located in the InSe (BP) layer. The band offsets of InSe and BP are 0.78 eV for the conduction band minimum and 0.86 eV for the valence band maximum, respectively. Surprisingly, the hole mobility in the InSe/BP heterostructure exceeds 10 4 cm 2 V -1 s -1 , which is one order of magnitude larger than the hole mobility of BP and three orders larger than that of the InSe monolayer. The electron mobility is also increased to 3 × 10 3 cm 2 V -1 s -1 . The physical reason has been analyzed deeply, and a universal method is proposed to improve the carrier mobility of 2D materials by forming heterostructures with them and other 2D materials with complementary properties. The InSe/BP heterostructure can thus be widely used in nanoscale InSe-based field-effect transistors, photodetectors and photovoltaic devices due to its type-II band alignment and high carrier mobility.

Three-dimensional reconstruction of indoor whole elements based on mobile LiDAR point cloud data

NASA Astrophysics Data System (ADS)

Gong, Yuejian; Mao, Wenbo; Bi, Jiantao; Ji, Wei; He, Zhanjun

2014-11-01

Ground-based LiDAR is one of the most effective city modeling tools at present, which has been widely used for three-dimensional reconstruction of outdoor objects. However, as for indoor objects, there are some technical bottlenecks due to lack of GPS signal. In this paper, based on the high-precision indoor point cloud data which was obtained by LiDAR, an international advanced indoor mobile measuring equipment, high -precision model was fulfilled for all indoor ancillary facilities. The point cloud data we employed also contain color feature, which is extracted by fusion with CCD images. Thus, it has both space geometric feature and spectral information which can be used for constructing objects' surface and restoring color and texture of the geometric model. Based on Autodesk CAD platform and with help of PointSence plug, three-dimensional reconstruction of indoor whole elements was realized. Specifically, Pointools Edit Pro was adopted to edit the point cloud, then different types of indoor point cloud data was processed, including data format conversion, outline extracting and texture mapping of the point cloud model. Finally, three-dimensional visualization of the real-world indoor was completed. Experiment results showed that high-precision 3D point cloud data obtained by indoor mobile measuring equipment can be used for indoor whole elements' 3-d reconstruction and that methods proposed in this paper can efficiently realize the 3 -d construction of indoor whole elements. Moreover, the modeling precision could be controlled within 5 cm, which was proved to be a satisfactory result.

The development of the Canadian Mobile Servicing System Kinematic Simulation Facility

NASA Technical Reports Server (NTRS)

Beyer, G.; Diebold, B.; Brimley, W.; Kleinberg, H.

1989-01-01

Canada will develop a Mobile Servicing System (MSS) as its contribution to the U.S./International Space Station Freedom. Components of the MSS will include a remote manipulator (SSRMS), a Special Purpose Dexterous Manipulator (SPDM), and a mobile base (MRS). In order to support requirements analysis and the evaluation of operational concepts related to the use of the MSS, a graphics based kinematic simulation/human-computer interface facility has been created. The facility consists of the following elements: (1) A two-dimensional graphics editor allowing the rapid development of virtual control stations; (2) Kinematic simulations of the space station remote manipulators (SSRMS and SPDM), and mobile base; and (3) A three-dimensional graphics model of the space station, MSS, orbiter, and payloads. These software elements combined with state of the art computer graphics hardware provide the capability to prototype MSS workstations, evaluate MSS operational capabilities, and investigate the human-computer interface in an interactive simulation environment. The graphics technology involved in the development and use of this facility is described.

Incremental value of live/real time three-dimensional transesophageal echocardiography over the two-dimensional technique in the assessment of aortic atherosclerotic thrombi and ulcers.

PubMed

Elsayed, Mahmoud; Bulur, Serkan; Kalla, Aditi; Ahmed, Mustafa I; Hsiung, Ming C; Uygur, Begum; Alagic, Nermina; Sungur, Aylin; Singh, Satinder; Nanda, Navin C

2016-08-01

We present two cases in whom live/real time three-dimensional transesophageal echocardiography (3DTEE) provided incremental value in the assessment of atherosclerotic disease in the aorta. In one patient, it identified additional atherosclerotic ulcers as well as thrombi within them which were missed by two-dimensional (2D) TEE. In both cases, the size of the large mobile atherosclerotic plaque was underestimated by 2DTEE as compared with 3DTEE. Furthermore, 3DTEE provided volume quantification of the thrombi and ulcers which is not possible by 2DTEE. The echocardiographic findings of atherosclerotic plaques were confirmed by computed tomography in one patient and by surgery in the other. © 2016, Wiley Periodicals, Inc.

A Study on the Formation of 2-Dimensional Tungsten Disulfide Thin Films on Sapphire Substrate by Sputtering and High Temperature Rapid Thermal Processing.

PubMed

Nam, Hanyeob; Kim, Hong-Seok; Han, Jae-Hee; Kwon, Sang Jik; Cho, Eou Sik

2018-09-01

As direct formation of p-type two-dimensional transition metal dichalcogenides (TMDC) films on substrates, tungsten disulfide (WS2) thin films were deposited onto sapphire glass substrate through shadow mask patterns by radio-frequency (RF) sputtering at different sputtering powers ranging from 60 W to 150 W and annealed by rapid thermal processing (RTP) at various high temperatures ranging from 500 °C to 800 °C. Based on scanning electron microscope (SEM) images and Raman spectra, better surface roughness and mode dominant E12g and A1g peaks were found for WS2 thin films prepared at higher RF sputtering powers. It was also possible to obtain high mobilities and carrier densities for all WS2 thin films based on results of Hall measurements. Process conditions for these WS2 thin films on sapphire substrate were optimized to low RF sputtering power and high temperature annealing.

Separation and characterization of chemical constituents in Ginkgo biloba extract by off-line hydrophilic interaction×reversed-phase two-dimensional liquid chromatography coupled with quadrupole-time of flight mass spectrometry.

PubMed

Ji, Shuai; He, Dan-Dan; Wang, Tian-Yun; Han, Jie; Li, Zheng; Du, Yan; Zou, Jia-Hui; Guo, Meng-Zhe; Tang, Dao-Quan

2017-11-30

Ginkgo biloba extract (GBE), derived from the leaves of Ginkgo biloba L., is one of the most widely used traditional Chinese medicines worldwide. Due to high structural diversity and low abundance of chemical constituents in GBE, conventional reversed-phase liquid chromatography has limited power to meet the needs of its quality control. In this study, an off-line hydrophilic interaction×reversed-phase two-dimensional liquid chromatography (HILIC×RP 2D-LC) system coupled with diode array detection (DAD) and quadrupole time-of-flight mass spectrometry (qTOF-MS) was established to comprehensively analyze the chemical constituents of GBE. After optimizing the chromatographic columns and mobile phase of 2D-LC, a Waters XBridge Amide column using acetonitrile/water/formic acid as the mobile phase was selected as the first dimension to fractionate GBE, and the obtained fractions were further separated on an Agilent Zorbax XDB-C18 column with methanol/water/formic acid as the mobile phase. As a result, a total of 125 compounds were detected in GBE. The orthogonality of the 2D-LC system was 69.5%, and the practical peak capacity was 3864 and 2994, respectively, calculated by two different methods. The structures of 104 compounds were tentatively characterized by qTOF-MS analysis, and 21 of them were further confirmed by comparing with reference standards. This established HILIC×RP 2D-LC-qTOF/MS system can greatly improve the separation and characterization of natural products in GBE or other complicated herbal extracts. Copyright © 2017 Elsevier B.V. All rights reserved.

Lipid-bilayer-assisted two-dimensional self-assembly of DNA origami nanostructures

NASA Astrophysics Data System (ADS)

Suzuki, Yuki; Endo, Masayuki; Sugiyama, Hiroshi

2015-08-01

Self-assembly is a ubiquitous approach to the design and fabrication of novel supermolecular architectures. Here we report a strategy termed `lipid-bilayer-assisted self-assembly' that is used to assemble DNA origami nanostructures into two-dimensional lattices. DNA origami structures are electrostatically adsorbed onto a mica-supported zwitterionic lipid bilayer in the presence of divalent cations. We demonstrate that the bilayer-adsorbed origami units are mobile on the surface and self-assembled into large micrometre-sized lattices in their lateral dimensions. Using high-speed atomic force microscopy imaging, a variety of dynamic processes involved in the formation of the lattice, such as fusion, reorganization and defect filling, are successfully visualized. The surface modifiability of the assembled lattice is also demonstrated by in situ decoration with streptavidin molecules. Our approach provides a new strategy for preparing versatile scaffolds for nanofabrication and paves the way for organizing functional nanodevices in a micrometer space.

Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications

NASA Astrophysics Data System (ADS)

Cywiński, G.; Yahniuk, I.; Kruszewski, P.; Grabowski, M.; Nowakowski-Szkudlarek, K.; Prystawko, P.; Sai, P.; Knap, W.; Simin, G. S.; Rumyantsev, S. L.

2018-03-01

We report on a design of fin-shaped channel GaN/AlGaN field-effect transistors developed for studying resonant terahertz plasma oscillations. Unlike common two dimensional FinFET transistor design, the gates were deposited only to the sides of the two dimensional electron gas channel, i.e., metal layers were not deposited on the top of the AlGaN. This side gate configuration allowed us to electrically control the conductivity of the channel by changing its width while keeping the carrier density and mobility virtually unchanged. Computer simulations and analytical model describe well the general shape of the characteristics. The side gate control of the channel width of these transistors allowed us to eliminate the so-called oblique plasma wave modes and paves the way towards future terahertz detectors and emitters using high quality factor plasma wave resonances.

Lipid-bilayer-assisted two-dimensional self-assembly of DNA origami nanostructures

PubMed Central

Endo, Masayuki; Sugiyama, Hiroshi

2015-01-01

Self-assembly is a ubiquitous approach to the design and fabrication of novel supermolecular architectures. Here we report a strategy termed ‘lipid-bilayer-assisted self-assembly' that is used to assemble DNA origami nanostructures into two-dimensional lattices. DNA origami structures are electrostatically adsorbed onto a mica-supported zwitterionic lipid bilayer in the presence of divalent cations. We demonstrate that the bilayer-adsorbed origami units are mobile on the surface and self-assembled into large micrometre-sized lattices in their lateral dimensions. Using high-speed atomic force microscopy imaging, a variety of dynamic processes involved in the formation of the lattice, such as fusion, reorganization and defect filling, are successfully visualized. The surface modifiability of the assembled lattice is also demonstrated by in situ decoration with streptavidin molecules. Our approach provides a new strategy for preparing versatile scaffolds for nanofabrication and paves the way for organizing functional nanodevices in a micrometer space. PMID:26310995

All 2D, high mobility, flexible, transparent thin film transistor

DOEpatents

Das, Saptarshi; Sumant, Anirudha V.; Roelofs, Andreas

2017-01-17

A two-dimensional thin film transistor and a method for manufacturing a two-dimensional thin film transistor includes layering a semiconducting channel material on a substrate, providing a first electrode material on top of the semiconducting channel material, patterning a source metal electrode and a drain metal electrode at opposite ends of the semiconducting channel material from the first electrode material, opening a window between the source metal electrode and the drain metal electrode, removing the first electrode material from the window located above the semiconducting channel material providing a gate dielectric above the semiconducting channel material, and providing a top gate above the gate dielectric, the top gate formed from a second electrode material. The semiconducting channel material is made of tungsten diselenide, the first electrode material and the second electrode material are made of graphene, and the gate dielectric is made of hexagonal boron nitride.

Two-dimensional dielectric nanosheets: novel nanoelectronics from nanocrystal building blocks.

PubMed

Osada, Minoru; Sasaki, Takayoshi

2012-01-10

Two-dimensional (2D) nanosheets, which possess atomic or molecular thickness and infinite planar lengths, are regarded as the thinnest functional nanomaterials. The recent development of methods for manipulating graphene (carbon nanosheet) has provided new possibilities and applications for 2D systems; many amazing functionalities such as high electron mobility and quantum Hall effects have been discovered. However, graphene is a conductor, and electronic technology also requires insulators, which are essential for many devices such as memories, capacitors, and gate dielectrics. Along with graphene, inorganic nanosheets have thus increasingly attracted fundamental research interest because they have the potential to be used as dielectric alternatives in next-generation nanoelectronics. Here, we review the progress made in the properties of dielectric nanosheets, highlighting emerging functionalities in electronic applications. We also present a perspective on the advantages offered by this class of materials for future nanoelectronics. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The State of the Art in (Cd,Mn)Te Heterostructures: Fundamentals and Applications

NASA Astrophysics Data System (ADS)

Wojtowicz, Tomasz

In my talk I will review recent progress in the MBE technology of (Cd,Mn)Te nanostructures containing two dimensional electron gas (2DEG) that led to the first ever observation of fractional quantum Hall effect in magnetic system. This opens new directions in spintronics. I will first discuss already demonstrated applications of such high mobility magnetic-2DEG system for: a) THz and microwave radiation induced zero-bias generation of pure spin currents and very efficient magnetic field induced conversion of them into spin polarized electric current; b) clear demonstration of THz radiation from spin-waves excited via efficient Raman generation process; c) experimental demonstration of working principles of a new type of spin transistor based on controlling the spin transmission via tunable Landau-Zener transitions in spatially modulated spin-split bands. I will also explain the possibility to use magnetic-2DEG for developing of a new system where non-Abelian excitations can not only be created, but also manipulated in a two-dimensional plane. The system is based on high mobility CdTe quantum wells with engineered placement of Mn atoms, where sign of the Lande g-factor can be locally controlled by electrostatic gates at high magnetic fields. Such a system may allow for building a new platform for topologically protected quantum information processing. I will also present results demonstrating electrostatic control of 2D gas polarization in a quantum Hall regime. The research was partially supported by National Science Centre (Poland) Grant DEC-2012/06/A/ST3/00247 and by ONR Grant N000141410339.

High-Level Heteroatom Doped Two-Dimensional Carbon Architectures for Highly Efficient Lithium-Ion Storage

PubMed Central

Wang, Zhijie; Wang, Yanyan; Wang, Wenhui; Yu, Xiaoliang; Lv, Wei; Xiang, Bin; He, Yan-Bing

2018-01-01

In this work, high-level heteroatom doped two-dimensional hierarchical carbon architectures (H-2D-HCA) are developed for highly efficient Li-ion storage applications. The achieved H-2D-HCA possesses a hierarchical 2D morphology consisting of tiny carbon nanosheets vertically grown on carbon nanoplates and containing a hierarchical porosity with multiscale pore size. More importantly, the H-2D-HCA shows abundant heteroatom functionality, with sulfur (S) doping of 0.9% and nitrogen (N) doping of as high as 15.5%, in which the electrochemically active N accounts for 84% of total N heteroatoms. In addition, the H-2D-HCA also has an expanded interlayer distance of 0.368 nm. When used as lithium-ion battery anodes, it shows excellent Li-ion storage performance. Even at a high current density of 5 A g−1, it still delivers a high discharge capacity of 329 mA h g−1 after 1,000 cycles. First principle calculations verifies that such unique microstructure characteristics and high-level heteroatom doping nature can enhance Li adsorption stability, electronic conductivity and Li diffusion mobility of carbon nanomaterials. Therefore, the H-2D-HCA could be promising candidates for next-generation LIB anodes. PMID:29686985

Investigation of trap states in Al2O3 InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Zhang, Peng; Zhao, Sheng-Lei; Xue, Jun-Shuai; Zhu, Jie-Jie; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

2015-12-01

In this paper the trapping effects in Al2O3/In0.17Al0.83N/GaN MOS-HEMT (here, HEMT stands for high electron mobility transistor) are investigated by frequency-dependent capacitance and conductance analysis. The trap states are found at both the Al2O3/InAlN and InAlN/GaN interface. Trap states in InAlN/GaN heterostructure are determined to have mixed de-trapping mechanisms, emission, and tunneling. Part of the electrons captured in the trap states are likely to tunnel into the two-dimensional electron gas (2DEG) channel under serious band bending and stronger electric field peak caused by high Al content in the InAlN barrier, which explains the opposite voltage dependence of time constant and relation between the time constant and energy of the trap states. Project supported by the Program for National Natural Science Foundation of China (Grant Nos. 61404100 and 61306017).

Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications

NASA Astrophysics Data System (ADS)

Demir, Ilkay; Altuntas, Ismail; Bulut, Baris; Ezzedini, Maher; Ergun, Yuksel; Elagoz, Sezai

2018-05-01

We present growth and characterization studies of highly n-doped InGaAs epilayers on InP substrate by metal organic vapor phase epitaxy to use as an n-contact layer in quantum cascade laser applications. We have introduced quasi two-dimensional electrons between 10 s pulsed growth n-doped InGaAs epilayers to improve both carrier concentration and mobility of structure by applying pulsed growth and doping methods towards increasing the Si dopant concentration in InGaAs. Additionally, the V/III ratio optimization under fixed group III source flow has been investigated with this new method to understand the effects on both crystalline quality and electrical properties of n-InGaAs epilayers. Finally, we have obtained high crystalline quality of n-InGaAs epilayers grown by 10 s pulsed as a contact layer with 2.8 × 1019 cm‑3 carrier concentration and 1530 cm2 V‑1 s‑1 mobility.

A secure operational model for mobile payments.

PubMed

Chang, Tao-Ku

2014-01-01

Instead of paying by cash, check, or credit cards, customers can now also use their mobile devices to pay for a wide range of services and both digital and physical goods. However, customers' security concerns are a major barrier to the broad adoption and use of mobile payments. In this paper we present the design of a secure operational model for mobile payments in which access control is based on a service-oriented architecture. A customer uses his/her mobile device to get authorization from a remote server and generate a two-dimensional barcode as the payment certificate. This payment certificate has a time limit and can be used once only. The system also provides the ability to remotely lock and disable the mobile payment service.

A Secure Operational Model for Mobile Payments

PubMed Central

2014-01-01

Instead of paying by cash, check, or credit cards, customers can now also use their mobile devices to pay for a wide range of services and both digital and physical goods. However, customers' security concerns are a major barrier to the broad adoption and use of mobile payments. In this paper we present the design of a secure operational model for mobile payments in which access control is based on a service-oriented architecture. A customer uses his/her mobile device to get authorization from a remote server and generate a two-dimensional barcode as the payment certificate. This payment certificate has a time limit and can be used once only. The system also provides the ability to remotely lock and disable the mobile payment service. PMID:25386607

Fluid-fluid interfacial mobility from random walks

NASA Astrophysics Data System (ADS)

Barclay, Paul L.; Lukes, Jennifer R.

2017-12-01

Dual control volume grand canonical molecular dynamics is used to perform the first calculation of fluid-fluid interfacial mobilities. The mobility is calculated from one-dimensional random walks of the interface by relating the diffusion coefficient to the interfacial mobility. Three different calculation methods are employed: one using the interfacial position variance as a function of time, one using the mean-squared interfacial displacement, and one using the time-autocorrelation of the interfacial velocity. The mobility is calculated for two liquid-liquid interfaces and one liquid-vapor interface to examine the robustness of the methods. Excellent agreement between the three calculation methods is shown for all the three interfaces, indicating that any of them could be used to calculate the interfacial mobility.

A library of atomically thin metal chalcogenides.

PubMed

Zhou, Jiadong; Lin, Junhao; Huang, Xiangwei; Zhou, Yao; Chen, Yu; Xia, Juan; Wang, Hong; Xie, Yu; Yu, Huimei; Lei, Jincheng; Wu, Di; Liu, Fucai; Fu, Qundong; Zeng, Qingsheng; Hsu, Chuang-Han; Yang, Changli; Lu, Li; Yu, Ting; Shen, Zexiang; Lin, Hsin; Yakobson, Boris I; Liu, Qian; Suenaga, Kazu; Liu, Guangtong; Liu, Zheng

2018-04-01

Investigations of two-dimensional transition-metal chalcogenides (TMCs) have recently revealed interesting physical phenomena, including the quantum spin Hall effect 1,2 , valley polarization 3,4 and two-dimensional superconductivity 5 , suggesting potential applications for functional devices 6-10 . However, of the numerous compounds available, only a handful, such as Mo- and W-based TMCs, have been synthesized, typically via sulfurization 11-15 , selenization 16,17 and tellurization 18 of metals and metal compounds. Many TMCs are difficult to produce because of the high melting points of their metal and metal oxide precursors. Molten-salt-assisted methods have been used to produce ceramic powders at relatively low temperature 19 and this approach 20 was recently employed to facilitate the growth of monolayer WS 2 and WSe 2 . Here we demonstrate that molten-salt-assisted chemical vapour deposition can be broadly applied for the synthesis of a wide variety of two-dimensional (atomically thin) TMCs. We synthesized 47 compounds, including 32 binary compounds (based on the transition metals Ti, Zr, Hf, V, Nb, Ta, Mo, W, Re, Pt, Pd and Fe), 13 alloys (including 11 ternary, one quaternary and one quinary), and two heterostructured compounds. We elaborate how the salt decreases the melting point of the reactants and facilitates the formation of intermediate products, increasing the overall reaction rate. Most of the synthesized materials in our library are useful, as supported by evidence of superconductivity in our monolayer NbSe 2 and MoTe 2 samples 21,22 and of high mobilities in MoS 2 and ReS 2 . Although the quality of some of the materials still requires development, our work opens up opportunities for studying the properties and potential application of a wide variety of two-dimensional TMCs.

Modulation doping at BaSnO3LaInO3

NASA Astrophysics Data System (ADS)

Char, Kookrin; Shin, Juyeon; Kim, Young Mo; Kim, Youjung

We recently reported on the conductance enhancement at the interface between two band insulators: LaInO3 (LIO) and BaSnO3 (BSO). These two-dimensional electron gas-like (2DEG) states at the LIO/Ba1-xLaxSnO3 (BLSO) polar interface display the stability, the controllability of the local carrier concentration, and the high electron mobility of BLSO. Search for the origin of enhanced conductance at the interface has been carried out, and one of the findings is that the doping level of BSO is a critical parameter for the polar charge contribution . We have also investigated a new modulated heterostructure by inserting an undoped BSO spacer layer at the LIO/BLSO interface. As increasing the thickness of the spacer layer, the carrier concentration and the mobility continually decreased. We attribute the results to the modified band bending as the thickness of the spacer layer varies and to the dislocation-limited transport. However, when we controlled the band bending by field effect, improved mobility was observed in these modulated heterostructures. This new modulated heterostructures of the LIO/BSO polar interface look promising not only for higher electron mobility devices but also for elucidating the mechanism of the 2DEG-like behavior. Samsung science and technology foundation.

Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

NASA Astrophysics Data System (ADS)

Avsar, Ahmet; Tan, Jun Y.; Kurpas, Marcin; Gmitra, Martin; Watanabe, Kenji; Taniguchi, Takashi; Fabian, Jaroslav; Özyilmaz, Barbaros

2017-09-01

Two-dimensional materials offer new opportunities for both fundamental science and technological applications, by exploiting the electron's spin. Although graphene is very promising for spin communication due to its extraordinary electron mobility, the lack of a bandgap restricts its prospects for semiconducting spin devices such as spin diodes and bipolar spin transistors. The recent emergence of two-dimensional semiconductors could help overcome this basic challenge. In this letter we report an important step towards making two-dimensional semiconductor spin devices. We have fabricated a spin valve based on ultrathin (~5 nm) semiconducting black phosphorus (bP), and established fundamental spin properties of this spin channel material, which supports all electrical spin injection, transport, precession and detection up to room temperature. In the non-local spin valve geometry we measure Hanle spin precession and observe spin relaxation times as high as 4 ns, with spin relaxation lengths exceeding 6 μm. Our experimental results are in a very good agreement with first-principles calculations and demonstrate that the Elliott-Yafet spin relaxation mechanism is dominant. We also show that spin transport in ultrathin bP depends strongly on the charge carrier concentration, and can be manipulated by the electric field effect.

Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application

NASA Astrophysics Data System (ADS)

Cho, Seongjae; Man Kang, In; Rok Kim, Kyung; Park, Byung-Gook; Harris, James S.

2013-11-01

In this work, Ge-based high-hole-mobility transistor with Si compatibility is designed, and its performance is evaluated. A 2-dimensional hole gas is effectively constructed by a AlGaAs/Ge/Si heterojunction with a sufficiently large valence band offset. Moreover, an intrinsic Ge channel is exploited so that high hole mobility is preserved without dopant scattering. Effects of design parameters such as gate length, Ge channel thickness, and aluminum fraction in the barrier material on device characteristics are thoroughly investigated through device simulations. A high on-current above 30 μA/μm along with a low subthreshold swing was obtained from an optimized planar device for low-power applications.

Mobile robots IV; Proceedings of the Meeting, Philadelphia, PA, Nov. 6, 7, 1989

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wolfe, W.J.; Chun, W.H.

1990-01-01

The present conference on mobile robot systems discusses high-speed machine perception based on passive sensing, wide-angle optical ranging, three-dimensional path planning for flying/crawling robots, navigation of autonomous mobile intelligence in an unstructured natural environment, mechanical models for the locomotion of a four-articulated-track robot, a rule-based command language for a semiautonomous Mars rover, and a computer model of the structured light vision system for a Mars rover. Also discussed are optical flow and three-dimensional information for navigation, feature-based reasoning trail detection, a symbolic neural-net production system for obstacle avoidance and navigation, intelligent path planning for robot navigation in an unknown environment,more » behaviors from a hierarchical control system, stereoscopic TV systems, the REACT language for autonomous robots, and a man-amplifying exoskeleton.« less

Mermin-Wagner theorem, flexural modes, and degraded carrier mobility in two-dimensional crystals with broken horizontal mirror symmetry

NASA Astrophysics Data System (ADS)

Fischetti, Massimo V.; Vandenberghe, William G.

2016-04-01

We show that the electron mobility in ideal, free-standing two-dimensional "buckled" crystals with broken horizontal mirror (σh) symmetry and Dirac-like dispersion (such as silicene and germanene) is dramatically affected by scattering with the acoustic flexural modes (ZA phonons). This is caused both by the broken σh symmetry and by the diverging number of long-wavelength ZA phonons, consistent with the Mermin-Wagner theorem. Non-σh-symmetric, "gapped" 2D crystals (such as semiconducting transition-metal dichalcogenides with a tetragonal crystal structure) are affected less severely by the broken σh symmetry, but equally seriously by the large population of the acoustic flexural modes. We speculate that reasonable long-wavelength cutoffs needed to stabilize the structure (finite sample size, grain size, wrinkles, defects) or the anharmonic coupling between flexural and in-plane acoustic modes (shown to be effective in mirror-symmetric crystals, like free-standing graphene) may not be sufficient to raise the electron mobility to satisfactory values. Additional effects (such as clamping and phonon stiffening by the substrate and/or gate insulator) may be required.

Method for laser-based two-dimensional navigation system in a structured environment

DOEpatents

Boultinghouse, Karlan D.; Schoeneman, J. Lee; Tise, Bertice L.

1989-01-01

A low power, narrow laser beam, generated by a laser carried by a mobile vehicle, is rotated about a vertical reference axis as the vehicle navigates within a structured environment. At least three stationary retroreflector elements are located at known positions, preferably at the periphery of the structured environment, with one of the elements having a distinctive retroreflection. The projected rotating beam traverses each retroreflector in succession, and the corresponding retroreflections are received at the vehicle and focussed on a photoelectric cell to generate corresponding electrical signals. The signal caused by the distinctive retroreflection serves as an angle-measurement datum. An angle encoder coupled to the apparatus rotating the projected laser beam provides the angular separation from this datum of the lines connecting the mobile reference axis to successive retroreflectors. This real-time angular data is utilized with the known locations of the retroreflectors to trigonometrically compute using three point resection, the exact real-time location of the mobile reference axis (hence the navigating vehicle) vis-a-vis the structured environment, e.g., in terms of two-dimensional Cartesian coordinates associated with the environment.

Nitrogen-related effects on low-temperature electronic properties of two-dimensional electron gas in very dilute nitride GaNxAs1-x/AlGaAs (x = 0 and 0.08%) modulation-doped heterostructures

NASA Astrophysics Data System (ADS)

Mootabian, Mahnaz; Eshghi, Hosein

2013-07-01

The low-temperature (4 K) two-dimensional (2D) electron gas mobility data versus carrier concentration in the modulation-doped dilute nitride GaAs1-xNx/Al0.3Ga0.7As (x = 0 and 0.08%) heterostructures are analyzed. Theoretical analysis is based on Fermi-Dirac statistics for the occupation of the quantum confined electronic states in the triangular quantum wells and the width of the quantum well versus 2D concentration. In addition, the mobility analysis is based on Matthiessen's rule for various scattering mechanisms. We found that the N-related neutral cluster alloy scattering together with crystal dislocations created at the interface strongly affects the electrons' mobility in the N-contained channel sample. We also found that as the electron concentration in the well increases from ˜1 × 1011 to 3.5 × 1011 cm-2 the carriers mainly occupy the first subband, tending to remain closer and closer to the hetero-interface.

Electron transport in the two-dimensional channel material - zinc oxide nanoflake

NASA Astrophysics Data System (ADS)

Lai, Jian-Jhong; Jian, Dunliang; Lin, Yen-Fu; Ku, Ming-Ming; Jian, Wen-Bin

2018-03-01

ZnO nanoflakes of 3-5 μm in lateral size and 15-20 nm in thickness are synthesized. The nanoflakes are used to make back-gated transistor devices. Electron transport in the ZnO nanoflake channel between source and drain electrodes are investigated. In the beginning, we argue and determine that electrons are in a two-dimensional system. We then apply Mott's two-dimensional variable range hopping model to analyze temperature and electric field dependences of resistivity. The disorder parameter, localization length, hopping distance, and hopping energy of the electron system in ZnO nanoflakes are obtained and, additionally, their temperature behaviors and dependences on room-temperature resistivity are presented. On the other hand, the basic transfer characteristics of the channel material are carried out, as well, and the carrier concentration, the mobility, and the Fermi wavelength of two-dimensional ZnO nanoflakes are estimated.

Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure

DOE PAGES

Laroche, D.; Huang, S. -H.; Chuang, Y.; ...

2016-06-06

We report the magneto-transport, scattering mechanisms, and e ective mass analysis of an ultralow density two-dimensional hole gas capacitively induced in an undoped strained Ge/Si0:2Ge0:8 heterostructure. This fabrication technique allows hole densities as low as p 1:1 1010 cm² to be achieved, more than one order of magnitude lower than previously reported in doped Ge/SiGe heterostructures. The power-law exponent of the electron mobility versus density curve, / n , is found to be 0:29 over most of the density range, implying that background impurity scattering is the dominant scattering mechanism at intermediate densities in such devices. A charge migration modelmore » is used to explain the mobility decrease at the highest achievable densities. The hole e ective mass is deduced from the temperature dependence of Shubnikov-de Haas oscillations. At p 1:0 1011cm², the e ective mass m is 0:105 m0, which is signi cantly larger than masses obtained from modulation-doped Ge/SiGe two-dimensional hole gases.« less

An enzymatic biosensor based on three-dimensional ZnO nanotetrapods spatial net modified AlGaAs/GaAs high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Yu; Bioengineering Program, Lehigh University, Bethlehem, Pennsylvania 18015; Zhang, Xiaohui

2014-11-24

We designed and constructed three dimensional (3D) zinc oxide Nanotetrapods (T-ZnOs) modified AlGaAs/GaAs high electron mobility transistors (HEMTs) for enzymatic uric acid (UA) detection. The chemical vapor deposition synthesized T-ZnOs was distributed on the gate areas of HEMTs in order to immobilize uricase and improve the sensitivity of the HEMTs. Combining with the high efficiency of enzyme immobilization by T-ZnOs and high sensitivity from HEMT, the as-constructed uricase/T-ZnOs/HEMTs biosensor showed fast response towards UA at ∼1 s, wide linear range from 0.2 nM to 0.2 mM and the low detect limit at 0.2 nM. The results point out an avenue to design electronic devicemore » as miniaturized lab-on-chip device for high sensitive and specific in biomedical and clinical diagnosis applications.« less

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deen, David A., E-mail: david.deen@alumni.nd.edu; Storm, David F.; Scott Katzer, D.

A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain currentmore » after bias stressed in subthreshold. These structures additionally achieved small signal metrics f{sub t}/f{sub max} of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with f{sub t}/f{sub max} of 48/60 GHz.« less

A gel as an array of channels.

PubMed

Zimm, B H

1996-06-01

We consider the theory of charged point molecules ('probes') being pulled by an electric field through a two-dimensional net of channels that represents a piece of gel. Associated with the position in the net is a free energy of interaction between the probe and the net; this free energy fluctuates randomly with the position of the probe in the net. The free energy is intended to represent weak interactions between the probe and the gel, such as entropy associated with the restriction of the freedom of motion of the probe by the gel, or electrostatic interactions between the probe and charges fixed to the gel. The free energy can be thought of as a surface with the appearance of a rough, hilly landscape spread over the net; the roughness is measured by the standard deviation of the free-energy distribution. Two variations of the model are examined: (1) the net is assumed to have all channels open, or (2) only channels parallel to the electric field are open and all the cross-connecting channels are closed. Model (1) is more realistic but presents a two-dimensional mathematical problem which can only be solved by slow iteration methods, while model (2) is less realistic but presents a one-dimensional problem that can be reduced to simple quadratures and is easy to solve by numerical integration. In both models the mobility of the probe decreases as the roughness parameter is increased, but the effect is larger in the less realistic model (2) if the same free-energy surface is used in both. The mobility in model (2) is reduced both by high points in the rough surface ('bumps') and by low points ('traps'), while in model (1) only the traps are effective, since the probes can flow around the bumps through the cross channels. The mobility in model (2) can be made to agree with model (1) simply by cutting off the bumps of the surface. Thus the simple model (2) can be used in place of the more realistic model (1) that is more difficult to compute.

United States Air Force Summer Faculty Research Program. Management Report. Volume 4

DTIC Science & Technology

1988-12-01

Anderson, N.L. et al (1986). Effects of Aroclor 1254 on proteins of mouse liver: Aplication of two-dimensional electrophoretic protein mapping...transferability of job skill, has surfaced in the context of civilian occupational mobility (Byrne, 1975; Fine, 1957a, 1957b) transitions from military to...considerations from concept through deployment. Defense Management Journal, 16(2), 12-19. Byrne, J. J. (1975). Occupational mobility of workers. Monthly

Response of a shell structure subject to distributed harmonic excitation

NASA Astrophysics Data System (ADS)

Cao, Rui; Bolton, J. Stuart

2016-09-01

Previously, a coupled, two-dimensional structural-acoustic ring model was constructed to simulate the dynamic and acoustical behavior of pneumatic tires. Analytical forced solutions were obtained and were experimentally verified through laser velocimeter measurement made using automobile tires. However, the two-dimensional ring model is incapable of representing higher order, in-plane modal motion in either the circumferential or axial directions. Therefore, in this paper, a three-dimensional pressurized circular shell model is proposed to study the in-plane shearing motion and the effect of different forcing conditions. Closed form analytical solutions were obtained for both free and forced vibrations of the shell under simply supported boundary conditions. Dispersion relations were calculated and different wave types were identified by their different speeds. Shell surface mobility results under various input distributions were also studied and compared. Spatial Fourier series decompositions were also performed on the spatial mobility results to give the forced dispersion relations, which illustrate clearly the influence of input force spatial distribution. Such a model has practical application in identifying the sources of noise and vibration problems in automotive tires.

Progressive friction mobilization and enhanced Janssen's screening in confined granular rafts

NASA Astrophysics Data System (ADS)

Saavedra V., Oscar; Elettro, Hervé; Melo, Francisco

2018-04-01

Confined two-dimensional assemblies of floating particles, known as granular rafts, are prone to develop a highly nonlinear response under compression. Here we investigate the transition to the friction-dominated jammed state and map the gradual development of the internal stress profile with flexible pressure sensors distributed along the raft surface. Surprisingly, we observe that the surface stress screening builds up much more slowly than previously thought and that the typical screening distance later dramatically decreases. We explain this behavior in terms of progressive friction mobilization, where the full amplitude of the frictional forces is only reached after a macroscopic local displacement. At further stages of compression, rafts of large length-to-width aspect ratio experience much stronger screenings than the full mobilization limit described by the Janssen's model. We solve this paradox using a simple mathematical analysis and show that such enhanced screening can be attributed to a localized compaction front, essentially shielding the far field from compressive stresses.

LaTiO3/KTaO3 interfaces: A new two-dimensional electron gas system

NASA Astrophysics Data System (ADS)

Zou, K.; Ismail-Beigi, Sohrab; Kisslinger, Kim; Shen, Xuan; Su, Dong; Walker, F. J.; Ahn, C. H.

2015-03-01

We report a new 2D electron gas (2DEG) system at the interface between a Mott insulator, LaTiO3, and a band insulator, KTaO3. For LaTiO3/KTaO3 interfaces, we observe metallic conduction from 2 K to 300 K. One serious technological limitation of SrTiO3-based conducting oxide interfaces for electronics applications is the relatively low carrier mobility (0.5-10 cm2/V s) of SrTiO3 at room temperature. By using KTaO3, we achieve mobilities in LaTiO3/KTaO3 interfaces as high as 21 cm2/V s at room temperature, over a factor of 3 higher than observed in doped bulk SrTiO3. By density functional theory, we attribute the higher mobility in KTaO3 2DEGs to the smaller effective mass for electrons in KTaO3.

High quality crystalline pentacene and rubrene FETs

NASA Astrophysics Data System (ADS)

Butko, Vladimir

2005-03-01

Molecular organic materials offer the promise of novel electronic devices but also present challenges for understanding charge transport in narrow band systems. We find that one of the most important intermolecular transport FET parameters, the effective channel mobility, is parameterized by two factors: (1) the degree of carrier trapping in localized DOS band-tail states, which are higher in concentration for FET structures than for bulk crystal, and (2) the free-carrier mobility, μ0. Our analysis shows crystalline devices possess μ0˜70 cm^2/Vs, significantly greater than polycrystalline thin film devices where free-carrier mobility μ0˜1 cm^2/Vs. Low temperature studies elucidate fundamental transport processes. We report the lowest temperature field effect transport results on a crystalline oligomeric organic material, rubrene. Gated transport shows a factor of ˜10 suppression of the thermal activation energy in 10-50 K range and nearly temperature independent resistivity below 10 K. Other examples of 2 dimensional charge carrier transport will also be discussed.

Bulk contribution to magnetotransport properties of low-defect-density Bi2Te3 topological insulator thin films

NASA Astrophysics Data System (ADS)

Ngabonziza, P.; Wang, Y.; Brinkman, A.

2018-04-01

An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi2Te3 topological insulator samples, bulk single crystals and thin films exposed to air during fabrication processes are known to be bulk conducting, with the chemical potential in the bulk conduction band. For Bi2Te3 thin films grown by molecular beam epitaxy, we combine structural characterization (transmission electron microscopy), chemical surface analysis as function of time (x-ray photoelectron spectroscopy) and magnetotransport analysis to understand the low defect density and record high bulk electron mobility once charge is doped into the bulk by surface degradation. Carrier densities and electronic mobilities extracted from the Hall effect and the quantum oscillations are consistent and reveal a large bulk carrier mobility. Because of the cylindrical shape of the bulk Fermi surface, the angle dependence of the bulk magnetoresistance oscillations is two dimensional in nature.

Terahertz radiation mixer

DOEpatents

Wanke, Michael C [Albuquerque, NM; Allen, S James [Santa Barbara, CA; Lee, Mark [Albuquerque, NM

2008-05-20

A terahertz radiation mixer comprises a heterodyned field-effect transistor (FET) having a high electron mobility heterostructure that provides a gatable two-dimensional electron gas in the channel region of the FET. The mixer can operate in either a broadband pinch-off mode or a narrowband resonant plasmon mode by changing a grating gate bias of the FET. The mixer can beat an RF signal frequency against a local oscillator frequency to generate an intermediate frequency difference signal in the microwave region. The mixer can have a low local oscillator power requirement and a large intermediate frequency bandwidth. The terahertz radiation mixer is particularly useful for terahertz applications requiring high resolution.

Electrohydrodynamic ionic wind, force field, and ionic mobility in a positive dc wire-to-cylinders corona discharge in air

NASA Astrophysics Data System (ADS)

Monrolin, Nicolas; Praud, Olivier; Plouraboué, Franck

2018-06-01

Ionic wind refers to the acceleration of partially ionized air between two high-voltage electrodes. We study the momentum transfer from ions to air, resulting from ionic wind created by two asymmetric electrodes and producing a net thrust. This electrohydrodynamic (EHD) thrust, has already been measured in previous studies with digital scales. In this study, we provide more insights into the electrohydrodynamic momentum transfer for a wire-to-cylinder(s) positive dc corona discharge. We provide a simple and general theoretical derivation for EHD thrust, which is proportional to the current/mobility ratio and also to an effective distance integrated on the surface of the electrodes. By considering various electrode configurations, our investigation brings out the physical origin of previously obtained optimal configurations, associated with a better tradeoff between Coulomb forcing, friction occurring at the collector, and wake interactions. By measuring two-dimensional velocity fields using particle image velocimetry (PIV), we are able to evaluate the resulting local net force, including the pressure gradient. It is shown that the contribution of velocity fluctuations in the wake of the collecting electrode(s) must be taken into account to recover the net thrust. We confirm the proportionality between the EHD force and the current/mobility ratio experimentally, and evaluate the ion mobility from PIV measurements. A spectral analysis of the velocity fluctuations indicates a dominant frequency corresponding to a Strouhal number of 0.3 based on the ionic wind velocity and the collector size. Finally, the effective mobility of charge carriers is estimated by a PIV based method inside the drift region.

Intrinsic Ferroelasticity and/or Multiferroicity in Two-Dimensional Phosphorene and Phosphorene Analogues.

PubMed

Wu, Menghao; Zeng, Xiao Cheng

2016-05-11

Phosphorene and phosphorene analogues such as SnS and SnSe monolayers are promising nanoelectronic materials with desired bandgap, high carrier mobility, and anisotropic structures. Here, we show first-principles calculation evidence that these monolayers are potentially the long-sought two-dimensional (2D) materials that can combine electronic transistor characteristic with nonvolatile memory readable/writeable capability at ambient condition. Specifically, phosphorene is predicted to be a 2D intrinsic ferroelastic material with ultrahigh reversible strain, whereas SnS, SnSe, GeS, and GeSe monolayers are multiferroic with coupled ferroelectricity and ferroelasticity. Moreover, their low-switching barriers render room-temperature nonvolatile memory accessible, and their notable structural anisotropy enables ferroelastic or ferroelectric switching readily readable via electrical, thermal, optical, mechanical, or even spintronic detection upon the swapping of the zigzag and armchair direction. In addition, it is predicted that the GeS and GeSe monolayers as well as bulk SnS and SnSe can maintain their ferroelasticity and ferroelectricity (anti-ferroelectricity) beyond the room temperature, suggesting high potential for practical device application.

Three-Dimensional Geometric Modeling of Membrane-bound Organelles in Ventricular Myocytes: Bridging the Gap between Microscopic Imaging and Mathematical Simulation

PubMed Central

Yu, Zeyun; Holst, Michael J.; Hayashi, Takeharu; Bajaj, Chandrajit L.; Ellisman, Mark H.; McCammon, J. Andrew; Hoshijima, Masahiko

2009-01-01

A general framework of image-based geometric processing is presented to bridge the gap between three-dimensional (3D) imaging that provides structural details of a biological system and mathematical simulation where high-quality surface or volumetric meshes are required. A 3D density map is processed in the order of image pre-processing (contrast enhancement and anisotropic filtering), feature extraction (boundary segmentation and skeletonization), and high-quality and realistic surface (triangular) and volumetric (tetrahedral) mesh generation. While the tool-chain described is applicable to general types of 3D imaging data, the performance is demonstrated specifically on membrane-bound organelles in ventricular myocytes that are imaged and reconstructed with electron microscopic (EM) tomography and two-photon microscopy (T-PM). Of particular interest in this study are two types of membrane-bound Ca2+-handling organelles, namely, transverse tubules (T-tubules) and junctional sarcoplasmic reticulum (jSR), both of which play an important role in regulating the excitation-contraction (E-C) coupling through dynamic Ca2+ mobilization in cardiomyocytes. PMID:18835449

Three-dimensional geometric modeling of membrane-bound organelles in ventricular myocytes: bridging the gap between microscopic imaging and mathematical simulation.

PubMed

Yu, Zeyun; Holst, Michael J; Hayashi, Takeharu; Bajaj, Chandrajit L; Ellisman, Mark H; McCammon, J Andrew; Hoshijima, Masahiko

2008-12-01

A general framework of image-based geometric processing is presented to bridge the gap between three-dimensional (3D) imaging that provides structural details of a biological system and mathematical simulation where high-quality surface or volumetric meshes are required. A 3D density map is processed in the order of image pre-processing (contrast enhancement and anisotropic filtering), feature extraction (boundary segmentation and skeletonization), and high-quality and realistic surface (triangular) and volumetric (tetrahedral) mesh generation. While the tool-chain described is applicable to general types of 3D imaging data, the performance is demonstrated specifically on membrane-bound organelles in ventricular myocytes that are imaged and reconstructed with electron microscopic (EM) tomography and two-photon microscopy (T-PM). Of particular interest in this study are two types of membrane-bound Ca(2+)-handling organelles, namely, transverse tubules (T-tubules) and junctional sarcoplasmic reticulum (jSR), both of which play an important role in regulating the excitation-contraction (E-C) coupling through dynamic Ca(2+) mobilization in cardiomyocytes.

Carrier Injection and Scattering in Atomically Thin Chalcogenides

NASA Astrophysics Data System (ADS)

Li, Song-Lin; Tsukagoshi, Kazuhito

2015-12-01

Atomically thin two-dimensional chalcogenides such as MoS2 monolayers are structurally ideal channel materials for the ultimate atomic electronics. However, a heavy thickness dependence of electrical performance is shown in these ultrathin materials, and the device performance normally degrades while exhibiting a low carrier mobility as compared with corresponding bulks, constituting a main hurdle for application in electronics. In this brief review, we summarize our recent work on electrode/channel contacts and carrier scattering mechanisms to address the origins of this adverse thickness dependence. Extrinsically, the Schottky barrier height increases at the electrode/channel contact area in thin channels owing to bandgap expansion caused by quantum confinement, which hinders carrier injection and degrades device performance. Intrinsically, thin channels tend to suffer from intensified Coulomb impurity scattering, resulting from the reduced interaction distance between interfacial impurities and channel carriers. Both factors are responsible for the adverse dependence of carrier mobility on channel thickness in two-dimensional semiconductors.

Synthesis of large-area multilayer hexagonal boron nitride for high material performance.

PubMed

Kim, Soo Min; Hsu, Allen; Park, Min Ho; Chae, Sang Hoon; Yun, Seok Joon; Lee, Joo Song; Cho, Dae-Hyun; Fang, Wenjing; Lee, Changgu; Palacios, Tomás; Dresselhaus, Mildred; Kim, Ki Kang; Lee, Young Hee; Kong, Jing

2015-10-28

Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young's modulus: 1.16 ± 0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ∼ 24,000 cm(2) V(-1) s(-1) at room temperature, higher than that (∼ 13,000 (2) V(-1) s(-1)) with exfoliated h-BN. By placing additional h-BN on a SiO2/Si substrate for a MoS2 (WSe2) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times.

Reentrant Metal-Insulator Transitions in Silicon -

NASA Astrophysics Data System (ADS)

Campbell, John William M.

This thesis describes a study of reentrant metal -insulator transitions observed in the inversion layer of extremely high mobility Si-MOSFETs. Magneto-transport measurements were carried out in the temperature range 20mK-4.2 K in a ^3He/^4 He dilution refrigerator which was surrounded by a 15 Tesla superconducting magnet. Below a melting temperature (T_{M}~500 mK) and a critical electron density (n_{s }~9times10^{10} cm^{-2}), the Shubnikov -de Haas oscillations in the diagonal resistivity enormous maximum values at the half filled Landau levels while maintaining deep minima corresponding to the quantum Hall effect at filled Landau levels. At even lower electron densities the insulating regions began to spread and eventually a metal-insulator transition could be induced at zero magnetic field. The measurement of extremely large resistances in the milliKelvin temperature range required the use of very low currents (typically in the 10^ {-12} A range) and in certain measurements minimizing the noise was also a consideration. The improvements achieved in these areas through the use of shielding, optical decouplers and battery operated instruments are described. The transport signatures of the insulating state are considered in terms of two basic mechanisms: single particle localization with transport by variable range hopping and the formation of a collective state such as a pinned Wigner crystal or electron solid with transport through the motion of bound dislocation pairs. The experimental data is best described by the latter model. Thus the two dimensional electron system in these high mobility Si-MOSFETs provides the first and only experimental demonstration to date of the formation of an electron solid at zero and low magnetic fields in the quantum limit where the Coulomb interaction energy dominates over the zero point oscillation energy. The role of disorder in favouring either single particle localization or the formation of a Wigner crystal is explored by considering a variety of samples with a wide range of mobilities and by varying the ratio of the carrier density (controlled by the applied gate voltage) to the impurity density (fixed during sample growth). A phase diagram showing the boundaries between the two dimensional electron gas, the Wigner solid, and the single particle localization induced insulator is established in terms of carrier density and sample mobility.

A Three-Dimensional Pore-Scale Model for Non-Wetting Phase Mobilization with Ferrofluid

NASA Astrophysics Data System (ADS)

Wang, N.; Prodanovic, M.

2017-12-01

Ferrofluid, a stable dispersion of paramagnetic nanoparticles in water, can generate a distributed pressure difference across the phase interface in an immiscible two-phase flow under an external magnetic field. In water-wet porous media, this non-uniform pressure difference may be used to mobilize the non-wetting phase, e.g. oil, trapped in the pores. Previous numerical work by Soares et al. of two-dimensional single-pore model showed enhanced non-wetting phase recovery with water-based ferrofluid under certain magnetic field directions and decreased recovery under other directions. However, the magnetic field selectively concentrates in the high magnetic permeability ferrofluid which fills the small corners between the non-wetting phase and the solid wall. The magnetic field induced pressure is proportional to the square of local magnetic field strength and its normal component, and makes a significant impact on the non-wetting phase deformation. The two-dimensional model omitted the effect of most of these corners and is not sufficient to compute the magnetic-field-induced pressure difference or to predict the non-wetting blob deformation. Further, it is not clear that 3D effects on magnetic field in an irregular geometry can be approximated in 2D. We present a three-dimensional immiscible two-phase flow model to simulate the deformation of a non-wetting liquid blob in a single pore filled with a ferrofluid under a uniform external magnetic field. The ferrofluid is modeled as a uniform single phase because the nanoparticles are 104 times smaller than the pore. The open source CFD solver library OpenFOAM is used for the simulations based on the volume of fluid method. Simulations are performed in a converging-diverging channel model on different magnetic field direction, different initial oil saturations, and different pore shapes. Results indicate that the external magnetic field always stretches the non-wetting blob away from the solid channel wall. A magnetic field transverse to the channel direction may likely provide the best elongation along the channel direction for the non-wetting blob. The pore-throat size ratio has an impact on the deformation of the non-wetting blob.

Pinning by rare defects and effective mobility for elastic interfaces in high dimensions

NASA Astrophysics Data System (ADS)

Cao, Xiangyu; Démery, Vincent; Rosso, Alberto

2018-06-01

The existence of a depinning transition for a high dimensional interface in a weakly disordered medium is controversial. Following Larkin arguments and a perturbative expansion, one expects a linear response with a renormalized mobility . In this paper, we compare these predictions with the exact solution of a fully connected model, which displays a finite critical force . At small disorder, we unveil an intermediary linear regime for characterized by the renormalized mobility . Our results suggest that in high dimension the critical force is always finite and determined by the effect of rare impurities that is missed by the perturbative expansion. However, the perturbative expansion correctly describes an intermediate regime that should be visible at small disorder.

Edema worsens target coverage in high-dose-rate interstitial brachytherapy of mobile tongue cancer: a report of two cases.

PubMed

Yoshida, Ken; Yamazaki, Hideya; Kotsuma, Tadayuki; Akiyama, Hironori; Takenaka, Tadashi; Masui, Koji; Yoshioka, Yasuo; Uesugi, Yasuo; Shimbo, Taiju; Yoshikawa, Nobuhiko; Yoshioka, Hiroto; Arika, Takumi; Tanaka, Eiichi; Narumi, Yoshifumi

2017-02-01

We report our study on two patients to highlight the risk of underdosage of the clinical target volume (CTV) due to edema during high-dose-rate interstitial brachytherapy (HDR-ISBT) of mobile tongue cancer. To treat the lateral side of the CTV, flexible applicator tubes were implanted on the mouth floor. Two-dimensional planning was performed using X-ray images for Case 1, and three-dimensional (3D) planning was performed using computed tomography (CT) for Case 2. Prescribed doses for both cases were 54 Gy in nine fractions. Case 1 was treated for cancer of the right lateral border of the tongue in 2005. Tongue edema occurred after implantation, and part of the lateral border of the tongue protruded between the applicator tubes. Acute mucosal reaction abated in the protruded area earlier than in the other parts of the CTV. In this case, the tumor recurred in this area 5 months after the treatment. Case 2 was treated for cancer of the left lateral border of the tongue. Because tongue edema occurred in this case also, plastic splints were inserted between the applicator tubes to push the edematous region into the irradiated area. The mucosal surface of the CTV was covered by the 70% isodose, and 100% isodose line for before and after splint insertion. Local control of the tumor was achieved 4 years after treatment. To ensure sufficient target coverage, 3D image-based planning using CT should be performed, followed by re-planning using repeated CT as needed. Also, the development of devices to prevent protrusion of the edematous tissue outside the target area will help to ensure the full dosing of CTV.

A natural-language interface to a mobile robot

NASA Technical Reports Server (NTRS)

Michalowski, S.; Crangle, C.; Liang, L.

1987-01-01

The present work on robot instructability is based on an ongoing effort to apply modern manipulation technology to serve the needs of the handicapped. The Stanford/VA Robotic Aid is a mobile manipulation system that is being developed to assist severely disabled persons (quadriplegics) in performing simple activities of everyday living in a homelike, unstructured environment. It consists of two major components: a nine degree-of-freedom manipulator and a stationary control console. In the work presented here, only the motions of the Robotic Aid's omnidirectional motion base have been considered, i.e., the six degrees of freedom of the arm and gripper have been ignored. The goal has been to develop some basic software tools for commanding the robot's motions in an enclosed room containing a few objects such as tables, chairs, and rugs. In the present work, the environmental model takes the form of a two-dimensional map with objects represented by polygons. Admittedly, such a highly simplified scheme bears little resemblance to the elaborate cognitive models of reality that are used in normal human discourse. In particular, the polygonal model is given a priori and does not contain any perceptual elements: there is no polygon sensor on board the mobile robot.

Electron mobility in modulation-doped heterostructures

NASA Technical Reports Server (NTRS)

Walukiewicz, W.; Ruda, H. E.; Lagowski, J.; Gatos, H. C.

1984-01-01

A model for electron mobility in a two-dimensional electron gas confined in a triangular well was developed. All major scattering processes (deformation potential and piezoelectric acoustic, polar optical, ionized impurity, and alloy disorder) were included, as well as intrasubband and intersubband scattering. The model is applied to two types of modulation-doped heterostructures, namely GaAs-GaAlAs and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As. In the former case, phonons and remote ionized impurities ultimately limit the mobility, whereas in the latter, alloy disorder is a predominant scattering process at low temperatures. The calculated mobilities are in very good agreement with recently reported experimental characteristics for both GaAs-Ga(1-x)Al(x)As and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As modulation-doped heterostructures.

High mobility and high stability glassy metal-oxynitride materials and devices

NASA Astrophysics Data System (ADS)

Lee, Eunha; Kim, Taeho; Benayad, Anass; Hur, Jihyun; Park, Gyeong-Su; Jeon, Sanghun

2016-04-01

In thin film technology, future semiconductor and display products with high performance, high density, large area, and ultra high definition with three-dimensional functionalities require high performance thin film transistors (TFTs) with high stability. Zinc oxynitride, a composite of zinc oxide and zinc nitride, has been conceded as a strong substitute to conventional semiconductor film such as silicon and indium gallium zinc oxide due to high mobility value. However, zinc oxynitride has been suffered from poor reproducibility due to relatively low binding energy of nitrogen with zinc, resulting in the instability of composition and its device performance. Here we performed post argon plasma process on zinc oxynitride film, forming nano-crystalline structure in stable amorphous matrix which hampers the reaction of oxygen with zinc. Therefore, material properties and device performance of zinc oxynitride are greatly enhanced, exhibiting robust compositional stability even exposure to air, uniform phase, high electron mobility, negligible fast transient charging and low noise characteristics. Furthermore, We expect high mobility and high stability zinc oxynitride customized by plasma process to be applicable to a broad range of semiconductor and display devices.

PdSe 2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oyedele, Akinola D.; Yang, Shize; Liang, Liangbo

Most studied two-dimensional (2D) materials exhibit isotropic behavior due to high lattice symmetry; however, lower-symmetry 2D materials such as phosphorene and other elemental 2D materials exhibit very interesting anisotropic properties. In this work, we report the atomic structure, electronic properties, and vibrational modes of few-layered PdSe 2, exfoliated from bulk crystals, a pentagonal 2D layered noble transition metal dichalcogenide with a puckered morphology that is air-stable. Micro-absorption optical spectroscopy and first-principles calculations reveal a wide band gap variation in this material from ~0 (bulk) to ~1.3 eV (monolayer). The Raman active vibrational modes of PdSe 2 were identified using polarizedmore » Raman spectroscopy, and the strong interlayer interaction was revealed from the large thickness-dependent Raman peak shifts, agreeing with first-principles Raman simulations. Field-effect transistors made from the few-layer PdSe 2 display tunable ambipolar charge carrier conduction with a high electron apparent field-effect mobility of ~158 cm 2V -1s -1, indicating the promise of this anisotropic, air-stable, pentagonal 2D material for 2D electronics.« less

PdSe 2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics

DOE PAGES

Oyedele, Akinola D.; Yang, Shize; Liang, Liangbo; ...

2017-09-05

Most studied two-dimensional (2D) materials exhibit isotropic behavior due to high lattice symmetry; however, lower-symmetry 2D materials such as phosphorene and other elemental 2D materials exhibit very interesting anisotropic properties. In this work, we report the atomic structure, electronic properties, and vibrational modes of few-layered PdSe 2, exfoliated from bulk crystals, a pentagonal 2D layered noble transition metal dichalcogenide with a puckered morphology that is air-stable. Micro-absorption optical spectroscopy and first-principles calculations reveal a wide band gap variation in this material from ~0 (bulk) to ~1.3 eV (monolayer). The Raman active vibrational modes of PdSe 2 were identified using polarizedmore » Raman spectroscopy, and the strong interlayer interaction was revealed from the large thickness-dependent Raman peak shifts, agreeing with first-principles Raman simulations. Field-effect transistors made from the few-layer PdSe 2 display tunable ambipolar charge carrier conduction with a high electron apparent field-effect mobility of ~158 cm 2V -1s -1, indicating the promise of this anisotropic, air-stable, pentagonal 2D material for 2D electronics.« less

Direct chiral determination of free amino acid enantiomers by two-dimensional liquid chromatography: application to control transformations in E-beam irradiated foodstuffs.

PubMed

Guillén-Casla, Vanesa; León-González, María Eugenia; Pérez-Arribas, Luis Vicente; Polo-Díez, Luis María

2010-05-01

Changes in free amino acids content and its potential racemization in ready-to-eat foods treated with E-beam irradiation between 1 and 8 kGy for sanitation purposes were studied. A simple heart cut two-dimensional high performance liquid chromatographic method (LC-LC) for the simultaneous enantiomeric determination of three pairs of amino acids used as markers (tyrosine, phenylalanine, and tryptophan) is presented. The proposed method involves the use of two chromatographs in an LC-LC achiral-chiral coupling. Amino acids and their decomposition products were firstly separated in a primary column (C(18)) using a mixture of ammonium acetate buffer (20 mM, pH 6) (94%) and methanol (6%) as the mobile phase. Then, a portion of each peak was transferred by heart cutting through a switching valve to a teicoplanin-chiral column. Methanol (90%)/water (10%) was used as the mobile phase. Ultraviolet detection was at 260 nm. Detection limits were between 0.16 and 3 mg L(-1) for each enantiomer. Recoveries were in the range 79-98%. The LC-LC method combined with the proposed sample extraction procedure is suitable for complex samples; it involves an online cleanup, and it prevents degradation of protein, racemization of L-enantiomers, and degradation of tryptophan. Under these conditions, D-amino acids were not found in any of the analyzed samples at detection levels of the proposed method.

Covalent functionalization and passivation of exfoliated black phosphorus via aryl diazonium chemistry.

PubMed

Ryder, Christopher R; Wood, Joshua D; Wells, Spencer A; Yang, Yang; Jariwala, Deep; Marks, Tobin J; Schatz, George C; Hersam, Mark C

2016-06-01

Functionalization of atomically thin nanomaterials enables the tailoring of their chemical, optical and electronic properties. Exfoliated black phosphorus (BP)-a layered two-dimensional semiconductor-exhibits favourable charge-carrier mobility, tunable bandgap and highly anisotropic properties, but it is chemically reactive and degrades rapidly in ambient conditions. Here we show that covalent aryl diazonium functionalization suppresses the chemical degradation of exfoliated BP even after three weeks of ambient exposure. This chemical modification scheme spontaneously forms phosphorus-carbon bonds, has a reaction rate sensitive to the aryl diazonium substituent and alters the electronic properties of exfoliated BP, ultimately yielding a strong, tunable p-type doping that simultaneously improves the field-effect transistor mobility and on/off current ratio. This chemical functionalization pathway controllably modifies the properties of exfoliated BP, and thus improves its prospects for nanoelectronic applications.

Covalent functionalization and passivation of exfoliated black phosphorus via aryl diazonium chemistry

NASA Astrophysics Data System (ADS)

Ryder, Christopher R.; Wood, Joshua D.; Wells, Spencer A.; Yang, Yang; Jariwala, Deep; Marks, Tobin J.; Schatz, George C.; Hersam, Mark C.

2016-06-01

Functionalization of atomically thin nanomaterials enables the tailoring of their chemical, optical and electronic properties. Exfoliated black phosphorus (BP)—a layered two-dimensional semiconductor—exhibits favourable charge-carrier mobility, tunable bandgap and highly anisotropic properties, but it is chemically reactive and degrades rapidly in ambient conditions. Here we show that covalent aryl diazonium functionalization suppresses the chemical degradation of exfoliated BP even after three weeks of ambient exposure. This chemical modification scheme spontaneously forms phosphorus-carbon bonds, has a reaction rate sensitive to the aryl diazonium substituent and alters the electronic properties of exfoliated BP, ultimately yielding a strong, tunable p-type doping that simultaneously improves the field-effect transistor mobility and on/off current ratio. This chemical functionalization pathway controllably modifies the properties of exfoliated BP, and thus improves its prospects for nanoelectronic applications.

Mobile free-space optical communications: a feasibility study of various battlefield scenarios

NASA Astrophysics Data System (ADS)

Harris, Alan; Al-Akkoumi, Mouhammad K.; Sluss, James J., Jr.

2012-06-01

Free Space Optics (FSO) technology was originally envisioned to be a viable solution for the provision of high bandwidth optical connectivity in the last mile of today's telecommunications infrastructure. Due to atmospheric limitations inherent to FSO technology, FSO is now widely envisioned as a solution for the provision of high bandwidth, temporary mobile communications links. The need for FSO communications links will increase as mobility is introduced to this technology. In this paper, a theoretical solution for adding mobility to FSO communication links is introduced. Three-dimensional power estimation studies are presented to represent mobile FSO transmission under various weather conditions. Three wavelengths, 0.85, 1.55 and 10 um, are tested and compared to illustrate the pros and cons of each source wavelength used for transmission, depending on prevalent weather conditions and atmospheric turbulence conditions. A simulation analysis of the transmission properties of the source wavelengths used in the study is shown.

Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.

PubMed

Lee, H-P; Perozek, J; Rosario, L D; Bayram, C

2016-11-21

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {Al x Ga 1-x N}/AlN, (b) Thin-GaN/3 × {Al x Ga 1-x N}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (<50 μm) wafer. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, high resolution-cross section transmission electron microscopy, optical microscopy, atomic-force microscopy, cathodoluminescence, Raman spectroscopy, X-ray diffraction (ω/2θ scan and symmetric/asymmetric ω scan (rocking curve scan), reciprocal space mapping) and Hall effect measurements are employed to study the structural, optical, and electrical properties of these AlGaN/GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm 2 /V∙s) and 2DEG carrier concentration (>1.0 × 10 13  cm -2 ) on Si(111) substrates.

Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations

PubMed Central

Lee, H.-P.; Perozek, J.; Rosario, L. D.; Bayram, C.

2016-01-01

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {AlxGa1−xN}/AlN, (b) Thin-GaN/3 × {AlxGa1−xN}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (<50 μm) wafer. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, high resolution-cross section transmission electron microscopy, optical microscopy, atomic-force microscopy, cathodoluminescence, Raman spectroscopy, X-ray diffraction (ω/2θ scan and symmetric/asymmetric ω scan (rocking curve scan), reciprocal space mapping) and Hall effect measurements are employed to study the structural, optical, and electrical properties of these AlGaN/GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm2/V∙s) and 2DEG carrier concentration (>1.0 × 1013 cm−2) on Si(111) substrates. PMID:27869222

Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Neal, Adam; Xia, Zhanbo; Joishi, Chandan; Johnson, Jared M.; Zheng, Yuanhua; Bajaj, Sanyam; Brenner, Mark; Dorsey, Donald; Chabak, Kelson; Jessen, Gregg; Hwang, Jinwoo; Mou, Shin; Heremans, Joseph P.; Rajan, Siddharth

2018-04-01

In this work, we demonstrate a high mobility two-dimensional electron gas (2DEG) formed at the β-(AlxGa1-x)2O3/Ga2O3 interface through modulation doping. Shubnikov-de Haas (SdH) oscillations were observed in the modulation-doped β-(AlxGa1-x)2O3/Ga2O3 structure, indicating a high-quality electron channel formed at the heterojunction interface. The formation of the 2DEG channel was further confirmed by the weak temperature dependence of the carrier density, and the peak low temperature mobility was found to be 2790 cm2/Vs, which is significantly higher than that achieved in bulk-doped Beta-phase Gallium Oxide (β-Ga2O3). The observed SdH oscillations allowed for the extraction of the electron effective mass in the (010) plane to be 0.313 ± 0.015 m0 and the quantum scattering time to be 0.33 ps at 3.5 K. The demonstrated modulation-doped β-(AlxGa1-x)2O3/Ga2O3 structure lays the foundation for future exploration of quantum physical phenomena and semiconductor device technologies based on the β-Ga2O3 material system.

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model.

PubMed

Penumatcha, Ashish V; Salazar, Ramon B; Appenzeller, Joerg

2015-11-13

Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses.

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

PubMed Central

Penumatcha, Ashish V.; Salazar, Ramon B.; Appenzeller, Joerg

2015-01-01

Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses. PMID:26563458

High-pressure microfluidic control in lab-on-a-chip devices using mobile polymer monoliths.

PubMed

Hasselbrink, Ernest F; Shepodd, Timothy J; Rehm, Jason E

2002-10-01

We have developed a nonstick polymer formulation for creating moving parts inside of microfluidic channels and have applied the technique to create piston-based devices that overcome several microfluidic flow control challenges. The parts were created bycompletely filling the channels of a glass microfluidic chip with the monomer/ solvent/initiator components of a nonstick photopolymer and then selectively exposing the chip to UV light in order to define mobile pistons (or other quasi-two-dimensional shapes) inside the channels. Stops defined in the substrate prevent the part from flushing out of the device but also provide sealing surfaces so that valves and other flow control devices are possible. Sealing against pressures greater than 30 MPa (4,500 psi) and actuation times less than 33 ms are observed. An on-chip check valve, a diverter valve, and a 10-nL pipet are demonstrated. This valving technology, coupled with high-pressure electrokinetic pumps, should make it possible to create a completely integrated HPLC system on a chip.

Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spencer, B. F., E-mail: Ben.Spencer@manchester.ac.uk; Smith, W. F.; Hibberd, M. T.

2016-05-23

The effective mass, sheet carrier concentration, and mobility of electrons within a two-dimensional electron gas in an AlGaN/GaN heterostructure were determined using a laboratory-based terahertz cyclotron resonance spectrometer. The ability to perform terahertz cyclotron resonance spectroscopy with magnetic fields of up to 31 T was enabled by combining a high-field pulsed magnet with a modified asynchronous optical sampling terahertz detection scheme. This scheme allowed around 100 transmitted terahertz waveforms to be recorded over the 14 ms magnetic field pulse duration. The sheet density and mobility were measured to be 8.0 × 10{sup 12 }cm{sup −2} and 9000 cm{sup 2} V{sup −1} s{sup −1} at 77 K. The in-planemore » electron effective mass at the band edge was determined to be 0.228 ± 0.002m{sub 0}.« less

Two-Year-Old Children Interpret Abstract, Purely Geometric Maps

ERIC Educational Resources Information Center

Winkler-Rhoades, Nathan; Carey, Susan C.; Spelke, Elizabeth S.

2013-01-01

In two experiments, 2.5-year-old children spontaneously used geometric information from 2D maps to locate objects in a 3D surface layout, without instruction or feedback. Children related maps to their corresponding layouts even though the maps differed from the layouts in size, mobility, orientation, dimensionality, and perspective, and even when…

Synaptic Bistability Due to Nucleation and Evaporation of Receptor Clusters

NASA Astrophysics Data System (ADS)

Burlakov, V. M.; Emptage, N.; Goriely, A.; Bressloff, P. C.

2012-01-01

We introduce a bistability mechanism for long-term synaptic plasticity based on switching between two metastable states that contain significantly different numbers of synaptic receptors. One state is characterized by a two-dimensional gas of mobile interacting receptors and is stabilized against clustering by a high nucleation barrier. The other state contains a receptor gas in equilibrium with a large cluster of immobile receptors, which is stabilized by the turnover rate of receptors into and out of the synapse. Transitions between the two states can be initiated by either an increase (potentiation) or a decrease (depotentiation) of the net receptor flux into the synapse. This changes the saturation level of the receptor gas and triggers nucleation or evaporation of receptor clusters.

The role of polarization coulomb field scattering in the electron mobility of AlGaN/AlN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Liu, Yan; Lin, Zhaojun; Zhao, Jingtao; Yang, Ming; Shi, Wenjing; Lv, Yuanjie; Feng, Zhihong

2016-04-01

The electron mobility for the prepared AlGaN/AlN/GaN heterostructure field-effect transistor (HFET) with the ratio of the gate length to the drain-to-source distance being less than 1/2 has been studied by comparing the measured electron mobility with the theoretical value. The measured electron mobility is derived from the measured capacitance-voltage (C-V) and current-voltage (I-V) characteristics, and the theoretical mobility is determined by using Matthiessen's law, involving six kinds of important scattering mechanisms. For the prepared device at room temperature, longitudinal optical phonon scattering (LO scattering) was found to have a remarkable effect on the value of the electron mobility, and polarization Coulomb field scattering (PCF scattering ) was found to be important to the changing trend of the electron mobility versus the two-dimensional electron gas (2DEG) density.

Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Laroche, D.; Lu, T. M., E-mail: tlu@sandia.gov; Huang, S.-H.

2016-06-06

We report the magneto-transport, scattering mechanisms, and effective mass analysis of an ultra-low density two-dimensional hole gas capacitively induced in an undoped strained Ge/Si{sub 0.2}Ge{sub 0.8} heterostructure. This fabrication technique allows hole densities as low as p ∼ 1.1 × 10{sup 10 }cm{sup −2} to be achieved, more than one order of magnitude lower than previously reported in doped Ge/SiGe heterostructures. The power-law exponent of the electron mobility versus density curve, μ ∝ n{sup α}, is found to be α ∼ 0.29 over most of the density range, implying that background impurity scattering is the dominant scattering mechanism at intermediate densities in such devices. A charge migrationmore » model is used to explain the mobility decrease at the highest achievable densities. The hole effective mass is deduced from the temperature dependence of Shubnikov-de Haas oscillations. At p ∼ 1.0 × 10{sup 11 }cm{sup −2}, the effective mass m* is ∼0.105 m{sub 0}, which is significantly larger than masses obtained from modulation-doped Ge/SiGe two-dimensional hole gases.« less

Solvent viscosity mismatch between the solute plug and the mobile phase: Considerations in the applications of two-dimensional HPLC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shalliker, R. Andrew; Guiochon, Georges A

Understanding the nature of viscosity contrast induced flow instabilities is an important aspect in the design of two-dimensional HPLC separations. When the viscosity contrast between the sample plug and the mobile phase is sufficiently large, the phenomenon known as viscous fingering can be induced. Viscous fingering is a flow instability phenomenon that occurs at the interface between two fluids with different viscosities. In liquid chromatography, viscous fingering results in the solute band undergoing a change in form as it enters into the chromatography column. Moreover, even in the absence of viscous fingering, band shapes change shape at low viscosity contrasts.more » These changes can result in a noticeable change in separation performance, with the result depending on whether the solvent pushing the solute plug has a higher or lower viscosity than the solute plug. These viscosity induced changes become more important as the solute injection volume increases and hence understanding the process becomes critical in the implementation of multidimensional HPLC techniques, since in these techniques the sample injection plug into the second dimension is an order of magnitude greater than in one-dimensional HPLC. This review article assesses the current understanding of the viscosity contrast induced processes as they relate to liquid chromatographic separation behaviour.« less

Innovative Mobile Smart Photonic Dimensional, Color and Spectral Measurement Engineering

NASA Astrophysics Data System (ADS)

Hofmann, Dr Dietrich, Prof; Dittrich (B. Eng. , Paul-Gerald; Höfner (B. Eng. , Dieter; Kraus, Daniel

2015-02-01

Aim of the paper is the demonstration of a paradigm shift in dimensional, color and spectral measurements in industry, biology/medicine, farming/environmental protection and security, as well as in education and training: Measurement engineering and quality assurance become mobile, modular and smart. Smartpads, smartphones and smartwatches (smartcomps) in combination with innovative hardware apps (hwapps) and conventional software apps (swapps) are fundamental enablers for the transformation from conventional stationary working places towards innovative mobile working places with in-field measurements and point-of-care (POC) diagnostics. Furthermore mobile open online courses (MOOCs) are transforming the study habits. Practical examples for the application of innovative photonic micro dimensiometers, colorimeters and spectrometers will be given. The innovative approach opens so far untapped enormous markets for measurement science, engineering, applications, education and training. These innovative working conditions will be fast accepted due to their convenience, reliability and affordability. A highly visible advantage of smartcomps is the huge number of their real distribution, their worldwide connectivity via Internet and cloud services, the standardized interfaces like USB and HDMI and the experienced capabilities of their users for practical operations, obtained with their private smartcomps.

Model of chiral spin liquids with Abelian and non-Abelian topological phases

NASA Astrophysics Data System (ADS)

Chen, Jyong-Hao; Mudry, Christopher; Chamon, Claudio; Tsvelik, A. M.

2017-12-01

We present a two-dimensional lattice model for quantum spin-1/2 for which the low-energy limit is governed by four flavors of strongly interacting Majorana fermions. We study this low-energy effective theory using two alternative approaches. The first consists of a mean-field approximation. The second consists of a random phase approximation (RPA) for the single-particle Green's functions of the Majorana fermions built from their exact forms in a certain one-dimensional limit. The resulting phase diagram consists of two competing chiral phases, one with Abelian and the other with non-Abelian topological order, separated by a continuous phase transition. Remarkably, the Majorana fermions propagate in the two-dimensional bulk, as in the Kitaev model for a spin liquid on the honeycomb lattice. We identify the vison fields, which are mobile (they are static in the Kitaev model) domain walls propagating along only one of the two space directions.

In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes

NASA Astrophysics Data System (ADS)

Liu, Zheng; Ma, Lulu; Shi, Gang; Zhou, Wu; Gong, Yongji; Lei, Sidong; Yang, Xuebei; Zhang, Jiangnan; Yu, Jingjiang; Hackenberg, Ken P.; Babakhani, Aydin; Idrobo, Juan-Carlos; Vajtai, Robert; Lou, Jun; Ajayan, Pulickel M.

2013-02-01

Graphene and hexagonal boron nitride (h-BN) have similar crystal structures with a lattice constant difference of only 2%. However, graphene is a zero-bandgap semiconductor with remarkably high carrier mobility at room temperature, whereas an atomically thin layer of h-BN is a dielectric with a wide bandgap of ~5.9 eV. Accordingly, if precise two-dimensional domains of graphene and h-BN can be seamlessly stitched together, hybrid atomic layers with interesting electronic applications could be created. Here, we show that planar graphene/h-BN heterostructures can be formed by growing graphene in lithographically patterned h-BN atomic layers. Our approach can create periodic arrangements of domains with size ranging from tens of nanometres to millimetres. The resulting graphene/h-BN atomic layers can be peeled off the growth substrate and transferred to various platforms including flexible substrates. We also show that the technique can be used to fabricate two-dimensional devices, such as a split closed-loop resonator that works as a bandpass filter.

Wafer-scale production of highly uniform two-dimensional MoS2 by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Kim, TaeWan; Mun, Jihun; Park, Hyeji; Joung, DaeHwa; Diware, Mangesh; Won, Chegal; Park, Jonghoo; Jeong, Soo-Hwan; Kang, Sang-Woo

2017-05-01

Semiconducting two-dimensional (2D) materials, particularly extremely thin molybdenum disulfide (MoS2) films, are attracting considerable attention from academia and industry owing to their distinctive optical and electrical properties. Here, we present the direct growth of a MoS2 monolayer with unprecedented spatial and structural uniformity across an entire 8 inch SiO2/Si wafer. The influences of growth pressure, ambient gases (Ar, H2), and S/Mo molar flow ratio on the MoS2 layered growth were explored by considering the domain size, nucleation sites, morphology, and impurity incorporation. Monolayer MoS2-based field effect transistors achieve an electron mobility of 0.47 cm2 V-1 s-1 and on/off current ratio of 5.4 × 104. This work demonstrates the potential for reliable wafer-scale production of 2D MoS2 for practical applications in next-generation electronic and optical devices.

Superconductivity in metal coated graphene

NASA Astrophysics Data System (ADS)

Uchoa, Bruno; Castro Neto, Antonio

2007-03-01

Graphene, a single atomic layer of graphite, is a two dimensional (2D) zero gap insulator with a high electronic mobility between nearest neighbor carbon sites. The unique electronic properties of graphene, from the semi-metallic behavior to the observation of an anomalous quantum Hall effect and a zero field quantized minimum of conductivity derive from the relativistic nature of its quasiparticles. By doping graphene, it behaves in several aspects as a conventional Fermi liquid, where electrons may form Cooper pairs by coupling with a bosonic mode. In this talk, we develop a mean-field phenomenology of superconductivity in a honeycomb lattice. We predict the possibility of two distinct phases, a singlet s-wave phase and a novel p+ip wave phase in the singlet channel. At half filling, the p+ip phase is gapless and superconductivity is a hidden order. We propose a few possible sources of Cooper pairing instability in graphene coated with alkaline and transition metals, and similar low dimensional graphene based devices.

Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation

PubMed Central

Ye, Tianyu; Liu, Han-Chun; Wang, Zhuo; Wegscheider, W.; Mani, Ramesh G.

2015-01-01

A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularly- polarized microwave excitation indicates a profound difference in the response observed upon rotating the microwave launcher for the two cases, although circularly polarized microwave radiation induced magnetoresistance oscillations observed at low magnetic fields are similar to the oscillations observed with linearly polarized radiation. For the linearly polarized radiation, the magnetoresistive response is a strong sinusoidal function of the launcher rotation (or linear polarization) angle, θ. For circularly polarized radiation, the oscillatory magnetoresistive response is hardly sensitive to θ. PMID:26450679

Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation.

PubMed

Ye, Tianyu; Liu, Han-Chun; Wang, Zhuo; Wegscheider, W; Mani, Ramesh G

2015-10-09

A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularly- polarized microwave excitation indicates a profound difference in the response observed upon rotating the microwave launcher for the two cases, although circularly polarized microwave radiation induced magnetoresistance oscillations observed at low magnetic fields are similar to the oscillations observed with linearly polarized radiation. For the linearly polarized radiation, the magnetoresistive response is a strong sinusoidal function of the launcher rotation (or linear polarization) angle, θ. For circularly polarized radiation, the oscillatory magnetoresistive response is hardly sensitive to θ.

A Low Cost Mobile Robot Based on Proportional Integral Derivative (PID) Control System and Odometer for Education

NASA Astrophysics Data System (ADS)

Haq, R.; Prayitno, H.; Dzulkiflih; Sucahyo, I.; Rahmawati, E.

2018-03-01

In this article, the development of a low cost mobile robot based on PID controller and odometer for education is presented. PID controller and odometer is applied for controlling mobile robot position. Two-dimensional position vector in cartesian coordinate system have been inserted to robot controller as an initial and final position. Mobile robot has been made based on differential drive and sensor magnetic rotary encoder which measured robot position from a number of wheel rotation. Odometry methode use data from actuator movements for predicting change of position over time. The mobile robot is examined to get final position with three different heading angle 30°, 45° and 60° by applying various value of KP, KD and KI constant.

Assessment of geometry in 2D immune systems using high accuracy laser-based bioprinting techniques (Conference Presentation)

NASA Astrophysics Data System (ADS)

Lauzurica, Sara; Márquez, Andrés.; Molpeceres, Carlos; Notario, Laura; Gómez-Fontela, Miguel; Lauzurica, Pilar

2017-02-01

The immune system is a very complex system that comprises a network of genetic and signaling pathways subtending a network of interacting cells. The location of the cells in a network, along with the gene products they interact with, rules the behavior of the immune system. Therefore, there is a great interest in understanding properly the role of a cell in such networks to increase our knowledge of the immune system response. In order to acquire a better understanding of these processes, cell printing with high spatial resolution emerges as one of the promising approaches to organize cells in two and three-dimensional patterns to enable the study the geometry influence in these interactions. In particular, laser assisted bio-printing techniques using sub-nanosecond laser sources have better characteristics for application in this field, mainly due to its higher spatial resolution, cell viability percentage and process automation. This work presents laser assisted bio-printing of antigen-presenting cells (APCs) in two-dimensional geometries, placing cellular components on a matrix previously generated on demand, permitting to test the molecular interactions between APCs and lymphocytes; as well as the generation of two-dimensional structures designed ad hoc in order to study the mechanisms of mobilization of immune system cells. The use of laser assisted bio-printing, along with APCs and lymphocytes emulate the structure of different niches of the immune system so that we can analyse functional requirement of these interaction.

Monolayer atomic crystal molecular superlattices.

PubMed

Wang, Chen; He, Qiyuan; Halim, Udayabagya; Liu, Yuanyue; Zhu, Enbo; Lin, Zhaoyang; Xiao, Hai; Duan, Xidong; Feng, Ziying; Cheng, Rui; Weiss, Nathan O; Ye, Guojun; Huang, Yun-Chiao; Wu, Hao; Cheng, Hung-Chieh; Shakir, Imran; Liao, Lei; Chen, Xianhui; Goddard, William A; Huang, Yu; Duan, Xiangfeng

2018-03-07

Artificial superlattices, based on van der Waals heterostructures of two-dimensional atomic crystals such as graphene or molybdenum disulfide, offer technological opportunities beyond the reach of existing materials. Typical strategies for creating such artificial superlattices rely on arduous layer-by-layer exfoliation and restacking, with limited yield and reproducibility. The bottom-up approach of using chemical-vapour deposition produces high-quality heterostructures but becomes increasingly difficult for high-order superlattices. The intercalation of selected two-dimensional atomic crystals with alkali metal ions offers an alternative way to superlattice structures, but these usually have poor stability and seriously altered electronic properties. Here we report an electrochemical molecular intercalation approach to a new class of stable superlattices in which monolayer atomic crystals alternate with molecular layers. Using black phosphorus as a model system, we show that intercalation with cetyl-trimethylammonium bromide produces monolayer phosphorene molecular superlattices in which the interlayer distance is more than double that in black phosphorus, effectively isolating the phosphorene monolayers. Electrical transport studies of transistors fabricated from the monolayer phosphorene molecular superlattice show an on/off current ratio exceeding 10 7 , along with excellent mobility and superior stability. We further show that several different two-dimensional atomic crystals, such as molybdenum disulfide and tungsten diselenide, can be intercalated with quaternary ammonium molecules of varying sizes and symmetries to produce a broad class of superlattices with tailored molecular structures, interlayer distances, phase compositions, electronic and optical properties. These studies define a versatile material platform for fundamental studies and potential technological applications.

Monolayer atomic crystal molecular superlattices

NASA Astrophysics Data System (ADS)

Wang, Chen; He, Qiyuan; Halim, Udayabagya; Liu, Yuanyue; Zhu, Enbo; Lin, Zhaoyang; Xiao, Hai; Duan, Xidong; Feng, Ziying; Cheng, Rui; Weiss, Nathan O.; Ye, Guojun; Huang, Yun-Chiao; Wu, Hao; Cheng, Hung-Chieh; Shakir, Imran; Liao, Lei; Chen, Xianhui; Goddard, William A., III; Huang, Yu; Duan, Xiangfeng

2018-03-01

Artificial superlattices, based on van der Waals heterostructures of two-dimensional atomic crystals such as graphene or molybdenum disulfide, offer technological opportunities beyond the reach of existing materials. Typical strategies for creating such artificial superlattices rely on arduous layer-by-layer exfoliation and restacking, with limited yield and reproducibility. The bottom-up approach of using chemical-vapour deposition produces high-quality heterostructures but becomes increasingly difficult for high-order superlattices. The intercalation of selected two-dimensional atomic crystals with alkali metal ions offers an alternative way to superlattice structures, but these usually have poor stability and seriously altered electronic properties. Here we report an electrochemical molecular intercalation approach to a new class of stable superlattices in which monolayer atomic crystals alternate with molecular layers. Using black phosphorus as a model system, we show that intercalation with cetyl-trimethylammonium bromide produces monolayer phosphorene molecular superlattices in which the interlayer distance is more than double that in black phosphorus, effectively isolating the phosphorene monolayers. Electrical transport studies of transistors fabricated from the monolayer phosphorene molecular superlattice show an on/off current ratio exceeding 107, along with excellent mobility and superior stability. We further show that several different two-dimensional atomic crystals, such as molybdenum disulfide and tungsten diselenide, can be intercalated with quaternary ammonium molecules of varying sizes and symmetries to produce a broad class of superlattices with tailored molecular structures, interlayer distances, phase compositions, electronic and optical properties. These studies define a versatile material platform for fundamental studies and potential technological applications.

Collective charge excitations of the two-dimensional electride Ca2N

NASA Astrophysics Data System (ADS)

Cudazzo, Pierluigi; Gatti, Matteo

2017-09-01

Ca2N is a layered material that has been recently identified as a two-dimensional (2D) electride, an unusual ionic compound in which electrons serve as anions. The electronic properties of 2D electrides attract considerable interest as the anionic electrons, which form a 2D layer sandwiched between atomic planes, are highly mobile as they are not attached to any ion. Here, on the basis of first-principles time-dependent density-functional theory calculations, we investigate the collective excitations of the electrons—i.e., the plasmons—in Ca2N as a function of wave vector q . Our calculations reveal an intrinsic negative in-plane dispersion of the anionic plasmon, in striking contrast with the homogeneous electron gas. Moreover, for wave vectors q normal to the planes, we find a long-lived plasmon that continues to exist well beyond the first Brillouin zone. This is a mark of the electronic inhomogeneities in the charge response that Ca2N shares with other layered materials like transition-metal dichalcogenides and MgB2. Finally, we compare the plasmon properties of Ca2N in its bulk and monolayer forms, which shows the effect of the different electronic structures and dimensionalities.

Two Carrier Analysis of Persistent Photoconductivity in Modulation-Doped Structures

NASA Technical Reports Server (NTRS)

Schacham, S. E.; Mena, R. A.; Haugland, E. J.; Alterovitz, S. A.

1995-01-01

A simultaneous fit of Hall and conductivity data gives quantitative results on the carrier concentration and mobility in both the quantum well and the parallel conduction channel. In this study this method was applied to reveal several new findings on the effect of persistent photoconductivity (PPC) on free-carrier concentrations and mobilities. The increase in the two-dimensional electron-gas (2DEG) concentration is significantly smaller than the apparent one derived from single carrier analysis of the Hall coefficient. In the two types of structures investigated, delta doped and continuously doped barrier, the apparent concentration almost doubles following illumination, while analysis reveals an increase of about 20% in the 2DEG. The effect of PPC on mobility depends on the structure. For the sample with a continuously doped barrier the mobility in the quantum well more than doubles. This increase is attributed to the effective screening of the ionized donors by the large electron concentration in the barrier. In the delta doped barrier sample the mobility is reduced by almost a factor of 2. This decrease is probably caused by strong coupling between the two wells, as is demonstrated by self-consistent analysis.

Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

NASA Astrophysics Data System (ADS)

Krishnamoorthy, Sriram; Xia, Zhanbo; Joishi, Chandan; Zhang, Yuewei; McGlone, Joe; Johnson, Jared; Brenner, Mark; Arehart, Aaron R.; Hwang, Jinwoo; Lodha, Saurabh; Rajan, Siddharth

2017-07-01

Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the β-(Al0.2Ga0.8)2O3/Ga2O3 material system could enable heterojunction devices for high performance electronics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guiochon, Georges A; Shalliker, R. Andrew

An algorithm was developed for 2DHPLC that automated the process of peak recognition, measuring their retention times, and then subsequently plotting the information in a two-dimensional retention plane. Following the recognition of peaks, the software then performed a series of statistical assessments of the separation performance, measuring for example, correlation between dimensions, peak capacity and the percentage of usage of the separation space. Peak recognition was achieved by interpreting the first and second derivatives of each respective one-dimensional chromatogram to determine the 1D retention times of each solute and then compiling these retention times for each respective fraction 'cut'. Duemore » to the nature of comprehensive 2DHPLC adjacent cut fractions may contain peaks common to more than one cut fraction. The algorithm determined which components were common in adjacent cuts and subsequently calculated the peak maximum profile by interpolating the space between adjacent peaks. This algorithm was applied to the analysis of a two-dimensional separation of an apple flesh extract separated in a first dimension comprising a cyano stationary phase and an aqueous/THF mobile phase as the first dimension and a second dimension comprising C18-Hydro with an aqueous/MeOH mobile phase. A total of 187 peaks were detected.« less

Developing Mobile BIM/2D Barcode-Based Automated Facility Management System

PubMed Central

Chen, Yen-Pei

2014-01-01

Facility management (FM) has become an important topic in research on the operation and maintenance phase. Managing the work of FM effectively is extremely difficult owing to the variety of environments. One of the difficulties is the performance of two-dimensional (2D) graphics when depicting facilities. Building information modeling (BIM) uses precise geometry and relevant data to support the facilities depicted in three-dimensional (3D) object-oriented computer-aided design (CAD). This paper proposes a new and practical methodology with application to FM that uses an integrated 2D barcode and the BIM approach. Using 2D barcode and BIM technologies, this study proposes a mobile automated BIM-based facility management (BIMFM) system for FM staff in the operation and maintenance phase. The mobile automated BIMFM system is then applied in a selected case study of a commercial building project in Taiwan to verify the proposed methodology and demonstrate its effectiveness in FM practice. The combined results demonstrate that a BIMFM-like system can be an effective mobile automated FM tool. The advantage of the mobile automated BIMFM system lies not only in improving FM work efficiency for the FM staff but also in facilitating FM updates and transfers in the BIM environment. PMID:25250373

Developing mobile BIM/2D barcode-based automated facility management system.

PubMed

Lin, Yu-Cheng; Su, Yu-Chih; Chen, Yen-Pei

2014-01-01

Facility management (FM) has become an important topic in research on the operation and maintenance phase. Managing the work of FM effectively is extremely difficult owing to the variety of environments. One of the difficulties is the performance of two-dimensional (2D) graphics when depicting facilities. Building information modeling (BIM) uses precise geometry and relevant data to support the facilities depicted in three-dimensional (3D) object-oriented computer-aided design (CAD). This paper proposes a new and practical methodology with application to FM that uses an integrated 2D barcode and the BIM approach. Using 2D barcode and BIM technologies, this study proposes a mobile automated BIM-based facility management (BIMFM) system for FM staff in the operation and maintenance phase. The mobile automated BIMFM system is then applied in a selected case study of a commercial building project in Taiwan to verify the proposed methodology and demonstrate its effectiveness in FM practice. The combined results demonstrate that a BIMFM-like system can be an effective mobile automated FM tool. The advantage of the mobile automated BIMFM system lies not only in improving FM work efficiency for the FM staff but also in facilitating FM updates and transfers in the BIM environment.

Quantifying the eroded volume of mercury-contaminated sediment using terrestrial laser scanning at Stocking Flat, Deer Creek, Nevada County, California, 2010–13

USGS Publications Warehouse

Howle, James F.; Alpers, Charles N.; Bawden, Gerald W.; Bond, Sandra

2016-07-28

High-resolution ground-based light detection and ranging (lidar), also known as terrestrial laser scanning, was used to quantify the volume of mercury-contaminated sediment eroded from a stream cutbank at Stocking Flat along Deer Creek in the Sierra Nevada foothills, about 3 kilometers west of Nevada City, California. Terrestrial laser scanning was used to collect sub-centimeter, three-dimensional images of the complex cutbank surface, which could not be mapped non-destructively or in sufficient detail with traditional surveying techniques.The stream cutbank, which is approximately 50 meters long and 8 meters high, was surveyed on four occasions: December 1, 2010; January 20, 2011; May 12, 2011; and February 4, 2013. Volumetric changes were determined between the sequential, three-dimensional lidar surveys. Volume was calculated by two methods, and the average value is reported. Between the first and second surveys (December 1, 2010, to January 20, 2011), a volume of 143 plus or minus 15 cubic meters of sediment was eroded from the cutbank and mobilized by Deer Creek. Between the second and third surveys (January 20, 2011, to May 12, 2011), a volume of 207 plus or minus 24 cubic meters of sediment was eroded from the cutbank and mobilized by the stream. Total volumetric change during the winter and spring of 2010–11 was 350 plus or minus 28 cubic meters. Between the third and fourth surveys (May 12, 2011, to February 4, 2013), the differencing of the three-dimensional lidar data indicated that a volume of 18 plus or minus 10 cubic meters of sediment was eroded from the cutbank. The total volume of sediment eroded from the cutbank between the first and fourth surveys was 368 plus or minus 30 cubic meters.

Scatterings and Quantum Effects in (Al ,In )N /GaN Heterostructures for High-Power and High-Frequency Electronics

NASA Astrophysics Data System (ADS)

Wang, Leizhi; Yin, Ming; Khan, Asif; Muhtadi, Sakib; Asif, Fatima; Choi, Eun Sang; Datta, Timir

2018-02-01

Charge transport in the wide-band-gap (Al ,In )N /GaN heterostructures with high carrier density approximately 2 ×1013 cm-2 is investigated over a large range of temperature (270 mK ≤T ≤280 K ) and magnetic field (0 ≤B ≤18 T ). We observe the first evidence of weak localization in the two-dimensional electron gas in this system. From the Shubnikov-de Haas (SdH) oscillations a relatively light effective mass of 0.23 me is determined. Furthermore, the linear dependence with temperature (T <20 K ) of the inelastic scattering rate (τi-1∝T ) is attributed to the phase breaking by electron-electron scattering. Also in the same temperature range the less-than unit ratio of quantum lifetime to Hall transport time (τq/τt<1 ) is taken to signify the dominance of small-angle scattering. Above 20 K, with increasing temperature scattering changes from acoustic phonon to optical phonon scattering, resulting in a rapid decrease in carrier mobility and increase in sheet resistance. Suppression of such scatterings will lead to higher mobility and a way forward to high-power and high-frequency electronics.

Influence of the three-dimensional heterogeneous roughness on electrokinetic transport in microchannels.

PubMed

Hu, Yandong; Werner, Carsten; Li, Dongqing

2004-12-15

Surface roughness has been considered as a passive means of enhancing species mixing in electroosmotic flow through microfluidic systems. It is highly desirable to understand the synergetic effect of three-dimensional (3D) roughness and surface heterogeneity on the electrokinetic flow through microchannels. In this study, we developed a three-dimensional finite-volume-based numerical model to simulate electroosmotic transport in a slit microchannel (formed between two parallel plates) with numerous heterogeneous prismatic roughness elements arranged symmetrically and asymmetrically on the microchannel walls. We consider that all 3D prismatic rough elements have the same surface charge or zeta potential, the substrate (the microchannel wall) surface has a different zeta potential. The results showed that the rough channel's geometry and the electroosmotic mobility ratio of the roughness elements' surface to that of the substrate, epsilon(mu), have a dramatic influence on the induced-pressure field, the electroosmotic flow patterns, and the electroosmotic flow rate in the heterogeneous rough microchannels. The associated sample-species transport presents a tidal-wave-like concentration field at the intersection between four neighboring rough elements under low epsilon(mu) values and has a concentration field similar to that of the smooth channels under high epsilon(mu) values.

Magnetic-field-free thermoelectronic power conversion based on graphene and related two-dimensional materials

NASA Astrophysics Data System (ADS)

Wanke, R.; Hassink, G. W. J.; Stephanos, C.; Rastegar, I.; Braun, W.; Mannhart, J.

2016-06-01

Mobile energy converters require, in addition to high conversion efficiency and low cost, a low mass. We propose to utilize thermoelectronic converters that use 2D-materials such as graphene for their gate electrodes. Deriving the ultimate limit for their specific energy output, we show that the positive energy output is likely close to the fundamental limit for any conversion of heat into electric power. These converters may be valuable as electric power sources of spacecraft, and with the addition of vacuum enclosures, for power generation in electric planes and cars.

Static vs. dynamic decoding algorithms in a non-invasive body-machine interface

PubMed Central

Seáñez-González, Ismael; Pierella, Camilla; Farshchiansadegh, Ali; Thorp, Elias B.; Abdollahi, Farnaz; Pedersen, Jessica; Mussa-Ivaldi, Ferdinando A.

2017-01-01

In this study, we consider a non-invasive body-machine interface that captures body motions still available to people with spinal cord injury (SCI) and maps them into a set of signals for controlling a computer user interface while engaging in a sustained level of mobility and exercise. We compare the effectiveness of two decoding algorithms that transform a high-dimensional body-signal vector into a lower dimensional control vector on 6 subjects with high-level SCI and 8 controls. One algorithm is based on a static map from current body signals to the current value of the control vector set through principal component analysis (PCA), the other on dynamic mapping a segment of body signals to the value and the temporal derivatives of the control vector set through a Kalman filter. SCI and control participants performed straighter and smoother cursor movements with the Kalman algorithm during center-out reaching, but their movements were faster and more precise when using PCA. All participants were able to use the BMI’s continuous, two-dimensional control to type on a virtual keyboard and play pong, and performance with both algorithms was comparable. However, seven of eight control participants preferred PCA as their method of virtual wheelchair control. The unsupervised PCA algorithm was easier to train and seemed sufficient to achieve a higher degree of learnability and perceived ease of use. PMID:28092564

Feasibility and Limitations of Vaccine Two-Dimensional Barcoding Using Mobile Devices.

PubMed

Bell, Cameron; Guerinet, Julien; Atkinson, Katherine M; Wilson, Kumanan

2016-06-23

Two-dimensional (2D) barcoding has the potential to enhance documentation of vaccine encounters at the point of care. However, this is currently limited to environments equipped with dedicated barcode scanners and compatible record systems. Mobile devices may present a cost-effective alternative to leverage 2D vaccine vial barcodes and improve vaccine product-specific information residing in digital health records. Mobile devices have the potential to capture product-specific information from 2D vaccine vial barcodes. We sought to examine the feasibility, performance, and potential limitations of scanning 2D barcodes on vaccine vials using 4 different mobile phones. A unique barcode scanning app was developed for Android and iOS operating systems. The impact of 4 variables on the scan success rate, data accuracy, and time to scan were examined: barcode size, curvature, fading, and ambient lighting conditions. Two experimenters performed 4 trials 10 times each, amounting to a total of 2160 barcode scan attempts. Of the 1832 successful scans performed in this evaluation, zero produced incorrect data. Five-millimeter barcodes were the slowest to scan, although only by 0.5 seconds on average. Barcodes with up to 50% fading had a 100% success rate, but success rate deteriorated beyond 60% fading. Curved barcodes took longer to scan compared with flat, but success rate deterioration was only observed at a vial diameter of 10 mm. Light conditions did not affect success rate or scan time between 500 lux and 20 lux. Conditions below 20 lux impeded the device's ability to scan successfully. Variability in scan time was observed across devices in all trials performed. 2D vaccine barcoding is possible using mobile devices and is successful under the majority of conditions examined. Manufacturers utilizing 2D barcodes should take into consideration the impact of factors that limit scan success rates. Future studies should evaluate the effect of mobile barcoding on workflow and vaccine administrator acceptance.

Intrinsic Charge Carrier Mobility in Single-Layer Black Phosphorus.

PubMed

Rudenko, A N; Brener, S; Katsnelson, M I

2016-06-17

We present a theory for single- and two-phonon charge carrier scattering in anisotropic two-dimensional semiconductors applied to single-layer black phosphorus (BP). We show that in contrast to graphene, where two-phonon processes due to the scattering by flexural phonons dominate at any practically relevant temperatures and are independent of the carrier concentration n, two-phonon scattering in BP is less important and can be considered negligible at n≳10^{13}  cm^{-2}. At smaller n, however, phonons enter in the essentially anharmonic regime. Compared to the hole mobility, which does not exhibit strong anisotropy between the principal directions of BP (μ_{xx}/μ_{yy}∼1.4 at n=10^{13} cm^{-2} and T=300  K), the electron mobility is found to be significantly more anisotropic (μ_{xx}/μ_{yy}∼6.2). Absolute values of μ_{xx} do not exceed 250 (700)  cm^{2} V^{-1} s^{-1} for holes (electrons), which can be considered as an upper limit for the mobility in BP at room temperature.

A Comparative Study of 3-Dimensional Titanium Versus 2-Dimensional Titanium Miniplates for Open Reduction and Fixation of Mandibular Parasymphysis Fracture.

PubMed

Mittal, Yogesh; Varghese, K George; Mohan, S; Jayakumar, N; Chhag, Somil

2016-03-01

Three dimensional titanium plating system was developed by Farmand in 1995 to meet the requirements of semi rigid fixation with lesser complication. The purpose of this in vivo prospective study was to evaluate and compare the clinical effectiveness of three dimensional and two dimensional Titanium miniplates for open reduction and fixation of mandibular parasymphysis fracture. Thirty patients with non-comminuted mandibular parasymphysis fractures were divided randomly into two equal groups and were treated with 2 mm 3D and 2D miniplate system respectively. All patients were systematically monitored at 1st, 2nd, 3rd, 6th week, 3rd and 6th month postoperatively. The outcome parameters recorded were severity of pain, infection, mobility, occlusion derangement, paresthesia and implant failure. The data so collected was analyzed using independent t test and Chi square test (α = .05). The results showed that one patient in each group had post-operative infection, occlusion derangement and mobility (p > .05). In Group A, one patient had paresthesia while in Group B, two patients had paresthesia (p > .05). None of the patients in both the groups had implant failure. There was no statistically significant difference between 3D and 2D miniplate system in all the recorded parameters at all the follow-ups (p > .05). 3D miniplates were found to be better than 2D miniplates in terms of cost, ease of surgery and operative time. However, 3D miniplates were unfavorable for cases where fracture line was oblique and in close proximity to mental foramen, where they were difficult to adapt and more chances for tooth-root damage and inadvertent injury to the mental nerve due to traction.

Anti-Weak Localization Measurements in the Ballistic Regime

NASA Astrophysics Data System (ADS)

Jayathilaka, Dilhani; Dedigama, Aruna; Murphy, Sheena; Edirisooriya, Madhavie; Goel, Niti; Mishima, Tetsuya; Santos, Michael; Mullen, Kieran

2007-03-01

Anti-weak localization dominates at low fields in systems in which spin-orbit coupling is strong. The experimental results are well described by theory [1] in low mobility systems in which the magnetic length (lB) is greater than the mean free path; however high mobility systems with strong spin-orbit interactions, such the InSb based two dimensional systems (2DESs) examined here, are not in this diffusive regime. A recently developed theory [2] addresses both the diffusive and ballistic regimes taking into account both the backscattered and non-backscattered contributions to the conductivity. We will discuss the agreement of the new theory to measurements of InSb 2DESs prepared with both strong Dresselhaus and Rashba effects. [1] S.V. Iordanskii, Yu B. Lyanda-Geller, and G.E. Pikus, JETP Lett. 60, 206 (1994). [2] L.E. Golub, Phys. Rev. B. 71, 235310 (2005).

Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmadi, Elaheh; Wienecke, Steven; Keller, Stacia

2014-02-17

The microstructure of N-face InAlN layers, lattice-matched to GaN, was investigated by scanning transmission electron microscopy and atom probe tomography. These layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) in the N-rich regime. Microstructural analysis shows an absence of the lateral composition modulation that was previously observed in InAlN films grown by PAMBE. A room temperature two-dimensional electron gas (2DEG) mobility of 1100 cm{sup 2}/V s and 2DEG sheet charge density of 1.9 × 10{sup 13} cm{sup −2} was measured for N-face GaN/AlN/GaN/InAlN high-electron-mobility transistors with lattice-matched InAlN back barriers.

LaTiO₃/KTaO₃ interfaces: A new two-dimensional electron gas system

DOE PAGES

Zou, K.; Ismail-Beigi, Sohrab; Kisslinger, Kim; ...

2015-03-01

We report a new 2D electron gas (2DEG) system at the interface between a Mott insulator, LaTiO₃, and a band insulator, KTaO₃. For LaTiO₃/KTaO₃ interfaces, we observe metallic conduction from 2 K to 300 K. One serious technological limitation of SrTiO₃-based conducting oxide interfaces for electronics applications is the relatively low carrier mobility (0.5-10 cm²/V s) of SrTiO₃ at room temperature. By using KTaO₃, we achieve mobilities in LaTiO₃/KTaO₃ interfaces as high as 21 cm²/V s at room temperature, over a factor of 3 higher than observed in doped bulk SrTiO₃. By density functional theory, we attribute the higher mobilitymore » in KTaO₃ 2DEGs to the smaller effective mass for electrons in KTaO₃.« less

Manifold learning in machine vision and robotics

NASA Astrophysics Data System (ADS)

Bernstein, Alexander

2017-02-01

Smart algorithms are used in Machine vision and Robotics to organize or extract high-level information from the available data. Nowadays, Machine learning is an essential and ubiquitous tool to automate extraction patterns or regularities from data (images in Machine vision; camera, laser, and sonar sensors data in Robotics) in order to solve various subject-oriented tasks such as understanding and classification of images content, navigation of mobile autonomous robot in uncertain environments, robot manipulation in medical robotics and computer-assisted surgery, and other. Usually such data have high dimensionality, however, due to various dependencies between their components and constraints caused by physical reasons, all "feasible and usable data" occupy only a very small part in high dimensional "observation space" with smaller intrinsic dimensionality. Generally accepted model of such data is manifold model in accordance with which the data lie on or near an unknown manifold (surface) of lower dimensionality embedded in an ambient high dimensional observation space; real-world high-dimensional data obtained from "natural" sources meet, as a rule, this model. The use of Manifold learning technique in Machine vision and Robotics, which discovers a low-dimensional structure of high dimensional data and results in effective algorithms for solving of a large number of various subject-oriented tasks, is the content of the conference plenary speech some topics of which are in the paper.

Ultrafast high-power microwave window breakdown: nonlinear and postpulse effects.

PubMed

Chang, C; Verboncoeur, J; Guo, M N; Zhu, M; Song, W; Li, S; Chen, C H; Bai, X C; Xie, J L

2014-12-01

The time- and space-dependent optical emissions of nanosecond high-power microwave discharges near a dielectric-air interface have been observed by nanosecond-response four-framing intensified-charged-coupled device cameras. The experimental observations indicate that plasma developed more intensely at the dielectric-air interface than at the free-space region with a higher electric-field amplitude. A thin layer of intense light emission above the dielectric was observed after the microwave pulse. The mechanisms of the breakdown phenomena are analyzed by a three-dimensional electromagnetic-field modeling and a two-dimensional electromagnetic particle-in-cell simulation, revealing the formation of a space-charge microwave sheath near the dielectric surface, accelerated by the normal components of the microwave field, significantly enhancing the local-field amplitude and hence ionization near the dielectric surface. The nonlinear positive feedback of ionization, higher electron mobility, and ultraviolet-driven photoemission due to the elevated electron temperature are crucial for achieving the ultrafast discharge. Following the high-power microwave pulse, the sheath sustains a glow discharge until the sheath collapses.

A Mobile Anchor Assisted Localization Algorithm Based on Regular Hexagon in Wireless Sensor Networks

PubMed Central

Rodrigues, Joel J. P. C.

2014-01-01

Localization is one of the key technologies in wireless sensor networks (WSNs), since it provides fundamental support for many location-aware protocols and applications. Constraints of cost and power consumption make it infeasible to equip each sensor node in the network with a global position system (GPS) unit, especially for large-scale WSNs. A promising method to localize unknown nodes is to use several mobile anchors which are equipped with GPS units moving among unknown nodes and periodically broadcasting their current locations to help nearby unknown nodes with localization. This paper proposes a mobile anchor assisted localization algorithm based on regular hexagon (MAALRH) in two-dimensional WSNs, which can cover the whole monitoring area with a boundary compensation method. Unknown nodes calculate their positions by using trilateration. We compare the MAALRH with HILBERT, CIRCLES, and S-CURVES algorithms in terms of localization ratio, localization accuracy, and path length. Simulations show that the MAALRH can achieve high localization ratio and localization accuracy when the communication range is not smaller than the trajectory resolution. PMID:25133212

Three-Dimensional Reconstruction and Solar Energy Potential Estimation of Buildings

NASA Astrophysics Data System (ADS)

Chen, Y.; Li, M.; Cheng, L.; Xu, H.; Li, S.; Liu, X.

2017-12-01

In the context of the construction of low-carbon cities, green cities and eco-cities, the ability of the airborne and mobile LiDAR should be explored in urban renewable energy research. As the main landscape in urban environment, buildings have large regular envelopes could receive a huge amount of solar radiation. In this study, a relatively complete calculation scheme about building roof and façade solar utilization potential is proposed, using building three-dimensional geometric feature information. For measuring the city-level building solar irradiance, the precise three-dimensional building roof and façade models should be first reconstructed from the airborne and mobile LiDAR, respectively. In order to obtaining the precise geometric structure of building facades from the mobile LiDAR data, a new method for structure detection and the three-dimensional reconstruction of building façades from mobile LiDAR data is proposed. The method consists of three steps: the preprocessing of façade points, the detection of façade structure, the restoration and reconstruction of building façade. As a result, the reconstruction method can effectively deal with missing areas caused by occlusion, viewpoint limitation, and uneven point density, as well as realizing the highly complete 3D reconstruction of a building façade. Furthermore, the window areas can be excluded for more accurate estimation of solar utilization potential. After then, the solar energy utilization potential of global building roofs and facades is estimate by using the solar irradiance model, which combine the analysis of the building shade and sky diffuse, based on the analysis of the geometrical structure of buildings.

Theoretical Study of Carrier Mobility in Two-Dimensional Tetragonal Carbon Allotrope from Porous Graphene

NASA Astrophysics Data System (ADS)

Gao, Song; Xiang, Hui; Xu, Bo; Xia, Yi-Dong; Yin, Jiang; Liu, Zhi-Guo

2016-08-01

Not Available Supported by the Fundamental Research Funds for the Central Universities, the Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions, and the National Natural Science Foundation of China under Grant No 11204123.

Evaluation of comprehensive multidimensional separations using reversed-phase, reversed-phase liquid chromatography/mass spectrometry for shotgun proteomics.

PubMed

Nakamura, Tatsuji; Kuromitsu, Junro; Oda, Yoshiya

2008-03-01

Two-dimensional liquid-chromatographic (LC) separation followed by mass spectrometric (MS) analysis was examined for the identification of peptides in complex mixtures as an alternative to widely used two-dimensional gel electrophoresis followed by MS analysis for use in proteomics. The present method involves the off-line coupling of a narrow-bore, polymer-based, reversed-phase column using an acetonitrile gradient in an alkaline mobile phase in the first dimension with octadecylsilanized silica (ODS)-based nano-LC/MS in the second dimension. After the first separation, successive fractions were acidified and dried off-line, then loaded on the second dimension column. Both columns separate peptides according to hydrophobicity under different pH conditions, but more peptides were identified than with the conventional technique for shotgun proteomics, that is, the combination of a strong cation exchange column with an ODS column, and the system was robust because no salts were included in the mobile phases. The suitability of the method for proteomics measurements was evaluated.

Throughput Analysis on 3-Dimensional Underwater Acoustic Network with One-Hop Mobile Relay.

PubMed

Zhong, Xuefeng; Chen, Fangjiong; Fan, Jiasheng; Guan, Quansheng; Ji, Fei; Yu, Hua

2018-01-16

Underwater acoustic communication network (UACN) has been considered as an essential infrastructure for ocean exploitation. Performance analysis of UACN is important in underwater acoustic network deployment and management. In this paper, we analyze the network throughput of three-dimensional randomly deployed transmitter-receiver pairs. Due to the long delay of acoustic channels, complicated networking protocols with heavy signaling overhead may not be appropriate. In this paper, we consider only one-hop or two-hop transmission, to save the signaling cost. That is, we assume the transmitter sends the data packet to the receiver by one-hop direct transmission, or by two-hop transmission via mobile relays. We derive the closed-form formulation of packet delivery rate with respect to the transmission delay and the number of transmitter-receiver pairs. The correctness of the derivation results are verified by computer simulations. Our analysis indicates how to obtain a precise tradeoff between the delay constraint and the network capacity.

Throughput Analysis on 3-Dimensional Underwater Acoustic Network with One-Hop Mobile Relay

PubMed Central

Zhong, Xuefeng; Fan, Jiasheng; Guan, Quansheng; Ji, Fei; Yu, Hua

2018-01-01

Underwater acoustic communication network (UACN) has been considered as an essential infrastructure for ocean exploitation. Performance analysis of UACN is important in underwater acoustic network deployment and management. In this paper, we analyze the network throughput of three-dimensional randomly deployed transmitter–receiver pairs. Due to the long delay of acoustic channels, complicated networking protocols with heavy signaling overhead may not be appropriate. In this paper, we consider only one-hop or two-hop transmission, to save the signaling cost. That is, we assume the transmitter sends the data packet to the receiver by one-hop direct transmission, or by two-hop transmission via mobile relays. We derive the closed-form formulation of packet delivery rate with respect to the transmission delay and the number of transmitter–receiver pairs. The correctness of the derivation results are verified by computer simulations. Our analysis indicates how to obtain a precise tradeoff between the delay constraint and the network capacity. PMID:29337911

High-Throughput Design of Two-Dimensional Electron Gas Systems Based on Polar/Nonpolar Perovskite Oxide Heterostructures

PubMed Central

Yang, Kesong; Nazir, Safdar; Behtash, Maziar; Cheng, Jianli

2016-01-01

The two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides such as LaAlO3 and SrTiO3 (STO) is of fundamental and practical interest because of its novel interfacial conductivity and its promising applications in next-generation nanoelectronic devices. Here we show that a group of combinatorial descriptors that characterize the polar character, lattice mismatch, band gap, and the band alignment between the perovskite-oxide-based band insulators and the STO substrate, can be introduced to realize a high-throughput (HT) design of SrTiO3-based 2DEG systems from perovskite oxide quantum database. Equipped with these combinatorial descriptors, we have carried out a HT screening of all the polar perovskite compounds, uncovering 42 compounds of potential interests. Of these, Al-, Ga-, Sc-, and Ta-based compounds can form a 2DEG with STO, while In-based compounds exhibit a strain-induced strong polarization when deposited on STO substrate. In particular, the Ta-based compounds can form 2DEG with potentially high electron mobility at (TaO2)+/(SrO)0 interface. Our approach, by defining materials descriptors solely based on the bulk materials properties, and by relying on the perovskite-oriented quantum materials repository, opens new avenues for the discovery of perovskite-oxide-based functional interface materials in a HT fashion. PMID:27708415

Holstein polaron in a valley-degenerate two-dimensional semiconductor.

PubMed

Kang, Mingu; Jung, Sung Won; Shin, Woo Jong; Sohn, Yeongsup; Ryu, Sae Hee; Kim, Timur K; Hoesch, Moritz; Kim, Keun Su

2018-05-28

Two-dimensional (2D) crystals have emerged as a class of materials with tunable carrier density 1 . Carrier doping to 2D semiconductors can be used to modulate many-body interactions 2 and to explore novel composite particles. The Holstein polaron is a small composite particle of an electron that carries a cloud of self-induced lattice deformation (or phonons) 3-5 , which has been proposed to play a key role in high-temperature superconductivity 6 and carrier mobility in devices 7 . Here we report the discovery of Holstein polarons in a surface-doped layered semiconductor, MoS 2 , in which a puzzling 2D superconducting dome with the critical temperature of 12 K was found recently 8-11 . Using a high-resolution band mapping of charge carriers, we found strong band renormalizations collectively identified as a hitherto unobserved spectral function of Holstein polarons 12-18 . The short-range nature of electron-phonon (e-ph) coupling in MoS 2 can be explained by its valley degeneracy, which enables strong intervalley coupling mediated by acoustic phonons. The coupling strength is found to increase gradually along the superconducting dome up to the intermediate regime, which suggests a bipolaronic pairing in the 2D superconductivity.

Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Ya-Chao, Zhang; Xiao-Wei, Zhou; Sheng-Rui, Xu; Da-Zheng, Chen; Zhi-Zhe, Wang; Xing, Wang; Jin-Feng, Zhang; Jin-Cheng, Zhang; Yue, Hao

2016-01-01

Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free InGaN channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 × 1013 cm-2 is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cm2/V·s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that InGaN channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional GaN channel heterostructure. The gratifying results imply that InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices. Project supported by the National Natural Science Foundation of China (Grant Nos. 61306017, 61334002, 61474086, and 11435010) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61306017).

Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

NASA Astrophysics Data System (ADS)

Bermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N.; Nonaka, Toshiaki; Ishihara, Ryoichi; Ikenoue, Hiroshi; Uraoka, Yukiharu

2016-01-01

We demonstrate the use of excimer laser annealing (ELA) as a low temperature annealing alternative to anneal amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) passivated by a solution-processed hybrid passivation layer. Usually, a-IGZO is annealed using thermal annealing at high temperatures of up to 400 °C. As an alternative to high temperature thermal annealing, two types of ELA, XeCl (308 nm) and KrF (248 nm) ELA, are introduced. Both ELA types enhanced the electrical characteristics of a-IGZO TFTs leading to a mobility improvement of ~13 cm2 V-1 s-1 and small threshold voltage which varied from ~0-3 V. Furthermore, two-dimensional heat simulation using COMSOL Multiphysics was used to identify possible degradation sites, analyse laser heat localization, and confirm that the substrate temperature is below 50 °C. The two-dimensional heat simulation showed that the substrate temperature remained at very low temperatures, less than 30 °C, during ELA. This implies that any flexible material can be used as the substrate. These results demonstrate the large potential of ELA as a low temperature annealing alternative for already-passivated a-IGZO TFTs.

Optimization of the dynamic behavior of strongly nonlinear heterogeneous materials

NASA Astrophysics Data System (ADS)

Herbold, Eric B.

New aspects of strongly nonlinear wave and structural phenomena in granular media are developed numerically, theoretically and experimentally. One-dimensional chains of particles and compressed powder composites are the two main types of materials considered here. Typical granular assemblies consist of linearly elastic spheres or layers of masses and effective nonlinear springs in one-dimensional columns for dynamic testing. These materials are highly sensitive to initial and boundary conditions, making them useful for acoustic and shock-mitigating applications. One-dimensional assemblies of spherical particles are examples of strongly nonlinear systems with unique properties. For example, if initially uncompressed, these materials have a sound speed equal to zero (sonic vacuum), supporting strongly nonlinear compression solitary waves with a finite width. Different types of assembled metamaterials will be presented with a discussion of the material's response to static compression. The acoustic diode effect will be presented, which may be useful in shock mitigation applications. Systems with controlled dissipation will also be discussed from an experimental and theoretical standpoint emphasizing the critical viscosity that defines the transition from an oscillatory to monotonous shock profile. The dynamic compression of compressed powder composites may lead to self-organizing mesoscale structures in two and three dimensions. A reactive granular material composed of a compressed mixture of polytetrafluoroethylene (PTFE), tungsten (W) and aluminum (Al) fine-grain powders exhibit this behavior. Quasistatic, Hopkinson bar, and drop-weight experiments show that composite materials with a high porosity and fine metallic particles exhibit a higher strength than less porous mixtures with larger particles, given the same mass fraction of constituents. A two-dimensional Eulerian hydrocode is implemented to investigate the mechanical deformation and failure of the compressed powder samples in simulated drop-weight tests. The calculations indicate that the dynamic formation of mesoscale force chains increase the strength of the sample. This is also apparent in three-dimensional finite element calculations of drop-weight test simulations using LS-Dyna despite a higher granular bulk coordination number, and an increased mobility of individual grains.

D Tracking Based Augmented Reality for Cultural Heritage Data Management

NASA Astrophysics Data System (ADS)

Battini, C.; Landi, G.

2015-02-01

The development of contactless documentation techniques is allowing researchers to collect high volumes of three-dimensional data in a short time but with high levels of accuracy. The digitalisation of cultural heritage opens up the possibility of using image processing and analysis, and computer graphics techniques, to preserve this heritage for future generations; augmenting it with additional information or with new possibilities for its enjoyment and use. The collection of precise datasets about cultural heritage status is crucial for its interpretation, its conservation and during the restoration processes. The application of digital-imaging solutions for various feature extraction, image data-analysis techniques, and three-dimensional reconstruction of ancient artworks, allows the creation of multidimensional models that can incorporate information coming from heterogeneous data sets, research results and historical sources. Real objects can be scanned and reconstructed virtually, with high levels of data accuracy and resolution. Real-time visualisation software and hardware is rapidly evolving and complex three-dimensional models can be interactively visualised and explored on applications developed for mobile devices. This paper will show how a 3D reconstruction of an object, with multiple layers of information, can be stored and visualised through a mobile application that will allow interaction with a physical object for its study and analysis, using 3D Tracking based Augmented Reality techniques.

Aluminum and Young Artists.

ERIC Educational Resources Information Center

Anderson, Thomas

1980-01-01

The author suggests a variety of ways in which aluminum and aluminum foil can be used in elementary and junior high art classes: relief drawing and rubbing; printing; repousse; sculpture; mobiles; foil sculpture; and three dimensional design. Sources of aluminum supplies are suggested. (SJL)

Two-dimensional liquid chromatography (LC) of phenolic compounds from the shoots of Rubus idaeus 'Glen Ample' cultivar variety.

PubMed

Kula, Marta; Głód, Daniel; Krauze-Baranowska, Mirosława

2016-03-20

In this study the application of two-dimensional LC (2D LC) for qualitative analysis of polyphenols and simple phenols in the shoots of Rubus idaeus 'Glen Ample' variety is presented. In the preliminary analysis, the methanol extract of the shoots was analyzed by one-dimensional LC. One-dimensional LC separation profiles of phenolics from R. idaeus 'Glen Ample' shoots were dependent on column type, mobile phase composition and gradient program used. Two-dimensional LC system was built from connecting an octadecyl C-18 silica column in the first dimension and pentafluorophenyl column in the second dimension, coupled with DAD and MS (ESI, APCI, DUIS ionization) detectors. A total of 34 phenolic compounds belonging to the groups of phenolic acids, ellagitannins, flavan-3-ols, flavonols and ellagic acid conjugates were identified in the shoots of R. idaeus 'Glen Ample'. The established 2D LC method offers an effective tool for analysis of phenolics present in Rubus species. Copyright © 2015 Elsevier B.V. All rights reserved.

First-principles design of nanostructured hybrid photovoltaics based on layered transition metal phosphates

DOE PAGES

Lentz, Levi C.; Kolpak, Alexie M.

2017-04-28

The performance of bulk organic and hybrid organic-inorganic heterojunction photovoltaics is often limited by high carrier recombination arising from strongly bound excitons and low carrier mobility. Structuring materials to minimize the length scales required for exciton separation and carrier collection is therefore a promising approach for improving efficiency. In this work, first-principles computations are employed to design and characterize a new class of photovoltaic materials composed of layered transition metal phosphates (TMPs) covalently bound to organic absorber molecules to form nanostructured superlattices. Using a combination of transition metal substitution and organic functionalization, the electronic structure of these materials is systematicallymore » tuned to design a new hybrid photovoltaic material predicted to exhibit very low recombination due to the presence of a local electric field and spatially isolated, high mobility, two-dimensional electron and hole conducting channels. Furthermore, this material is predicted to have a large open-circuit voltage of 1.7 V. Here, this work suggests that hybrid TMPs constitute an interesting class of materials for further investigation in the search for achieving high efficiency, high power, and low cost photo Zirconium phosphate was chosen, in part, due to previous experiment voltaics.« less

Synthesis of large-area multilayer hexagonal boron nitride for high material performance

PubMed Central

Kim, Soo Min; Hsu, Allen; Park, Min Ho; Chae, Sang Hoon; Yun, Seok Joon; Lee, Joo Song; Cho, Dae-Hyun; Fang, Wenjing; Lee, Changgu; Palacios, Tomás; Dresselhaus, Mildred; Kim, Ki Kang; Lee, Young Hee; Kong, Jing

2015-01-01

Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young's modulus: 1.16±0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ∼24,000 cm2 V−1 s−1 at room temperature, higher than that (∼13,000 2 V−1 s−1) with exfoliated h-BN. By placing additional h-BN on a SiO2/Si substrate for a MoS2 (WSe2) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times. PMID:26507400

Surface-directed molecular assembly of pentacene on monolayer graphene for high-performance organic transistors.

PubMed

Lee, Wi Hyoung; Park, Jaesung; Sim, Sung Hyun; Lim, Soojin; Kim, Kwang S; Hong, Byung Hee; Cho, Kilwon

2011-03-30

Organic electronic devices that use graphene electrodes have received considerable attention because graphene is regarded as an ideal candidate electrode material. Transfer and lithographic processes during fabrication of patterned graphene electrodes typically leave polymer residues on the graphene surfaces. However, the impact of these residues on the organic semiconductor growth mechanism on graphene surface has not been reported yet. Here, we demonstrate that polymer residues remaining on graphene surfaces induce a stand-up orientation of pentacene, thereby controlling pentacene growth such that the molecular assembly is optimal for charge transport. Thus, pentacene field-effect transistors (FETs) using source/drain monolayer graphene electrodes with polymer residues show a high field-effect mobility of 1.2 cm(2)/V s. In contrast, epitaxial growth of pentacene having molecular assembly of lying-down structure is facilitated by π-π interaction between pentacene and the clean graphene electrode without polymer residues, which adversely affects lateral charge transport at the interface between electrode and channel. Our studies provide that the obtained high field-effect mobility in pentacene FETs using monolayer graphene electrodes arises from the extrinsic effects of polymer residues as well as the intrinsic characteristics of the highly conductive, ultrathin two-dimensional monolayer graphene electrodes.

First-principles design of nanostructured hybrid photovoltaics based on layered transition metal phosphates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lentz, Levi C.; Kolpak, Alexie M.

The performance of bulk organic and hybrid organic-inorganic heterojunction photovoltaics is often limited by high carrier recombination arising from strongly bound excitons and low carrier mobility. Structuring materials to minimize the length scales required for exciton separation and carrier collection is therefore a promising approach for improving efficiency. In this work, first-principles computations are employed to design and characterize a new class of photovoltaic materials composed of layered transition metal phosphates (TMPs) covalently bound to organic absorber molecules to form nanostructured superlattices. Using a combination of transition metal substitution and organic functionalization, the electronic structure of these materials is systematicallymore » tuned to design a new hybrid photovoltaic material predicted to exhibit very low recombination due to the presence of a local electric field and spatially isolated, high mobility, two-dimensional electron and hole conducting channels. Furthermore, this material is predicted to have a large open-circuit voltage of 1.7 V. Here, this work suggests that hybrid TMPs constitute an interesting class of materials for further investigation in the search for achieving high efficiency, high power, and low cost photo Zirconium phosphate was chosen, in part, due to previous experiment voltaics.« less

Signatures of Mechanically Interlocked Topology of Lasso Peptides by Ion Mobility-Mass Spectrometry: Lessons from a Collection of Representatives

NASA Astrophysics Data System (ADS)

Fouque, Kevin Jeanne Dit; Lavanant, Hélène; Zirah, Séverine; Hegemann, Julian D.; Zimmermann, Marcel; Marahiel, Mohamed A.; Rebuffat, Sylvie; Afonso, Carlos

2017-02-01

Lasso peptides are characterized by a mechanically interlocked structure, where the C-terminal tail of the peptide is threaded and trapped within an N-terminal macrolactam ring. Their compact and stable structures have a significant impact on their biological and physical properties and make them highly interesting for drug development. Ion mobility - mass spectrometry (IM-MS) has shown to be effective to discriminate the lasso topology from their corresponding branched-cyclic topoisomers in which the C-terminal tail is unthreaded. In fact, previous comparison of the IM-MS data of the two topologies has yielded three trends that allow differentiation of the lasso fold from the branched-cyclic structure: (1) the low abundance of highly charged ions, (2) the low change in collision cross sections (CCS) with increasing charge state and (3) a narrow ion mobility peak width. In this study, a three-dimensional plot was generated using three indicators based on these three trends: (1) mean charge divided by mass (ζ), (2) relative range of CCS covered by all protonated molecules (ΔΩ/Ω) and (3) mean ion mobility peak width (δΩ). The data were first collected on a set of twenty one lasso peptides and eight branched-cyclic peptides. The indicators were obtained also for eight variants of the well-known lasso peptide MccJ25 obtained by site-directed mutagenesis and further extended to five linear peptides, two macrocyclic peptides and one disulfide constrained peptide. In all cases, a clear clustering was observed between constrained and unconstrained structures, thus providing a new strategy to discriminate mechanically interlocked topologies.

Investigations on mobility of carbon colloid supported nanoscale zero-valent iron (nZVI) in a column experiment and a laboratory 2D-aquifer test system.

PubMed

Busch, Jan; Meißner, Tobias; Potthoff, Annegret; Oswald, Sascha E

2014-09-01

Nanoscale zero-valent iron (nZVI) has recently gained great interest in the scientific community as in situ reagent for installation of permeable reactive barriers in aquifer systems, since nZVI is highly reactive with chlorinated compounds and may render them to harmless substances. However, nZVI has a high tendency to agglomerate and sediment; therefore it shows very limited transport ranges. One new approach to overcome the limited transport of nZVI in porous media is using a suited carrier colloid. In this study we tested mobility of a carbon colloid supported nZVI particle "Carbo-Iron Colloids" (CIC) with a mean size of 0.63 μm in a column experiment of 40 cm length and an experiment in a two-dimensional (2D) aquifer test system with dimensions of 110 × 40 × 5 cm. Results show a breakthrough maximum of 82 % of the input concentration in the column experiment and 58 % in the 2D-aquifer test system. Detected residuals in porous media suggest a strong particle deposition in the first centimeters and few depositions in the porous media in the further travel path. Overall, this suggests a high mobility in porous media which might be a significant enhancement compared to bare or polyanionic stabilized nZVI.

AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2 V-1 s-1)

NASA Astrophysics Data System (ADS)

Yamamoto, Akio; Makino, Shinya; Kanatani, Keito; Kuzuhara, Masaaki

2018-04-01

In this study, the metal-organic-vapor-phase-epitaxial growth behavior and electrical properties of AlGaN/GaN structures prepared by the growth of an AlGaN layer on a reactive-ion-etched (RIE) GaN surface without regrown GaN layers were investigated. The annealing of RIE-GaN surfaces in NH3 + H2 atmosphere, employed immediately before AlGaN growth, was a key process in obtaining a clean GaN surface for AlGaN growth, that is, in obtaining an electron mobility as high as 1350 cm2 V-1 s-1 in a fabricated AlGaN/RIE-GaN structure. High-electron-mobility transistors (HEMTs) were successfully fabricated with AlGaN/RIE-GaN wafers. With decreasing density of dotlike defects observed on the surfaces of AlGaN/RIE-GaN wafers, both two-dimensional electron gas properties of AlGaN/RIE-GaN structures and DC characteristics of HEMTs were markedly improved. Since dotlike defect density was markedly dependent on RIE lot, rather than on growth lot, surface contaminations of GaN during RIE were believed to be responsible for the formation of dotlike defects and, therefore, for the inferior electrical properties.

Microwave-induced resistance oscillations on a high-mobility two-dimensional electron gas: Exact waveform, absorption/reflection and temperature damping

NASA Astrophysics Data System (ADS)

Studenikin, S. A.; Potemski, M.; Sachrajda, A.; Hilke, M.; Pfeiffer, L. N.; West, K. W.

2005-06-01

In this work we address experimentally a number of unresolved issues related to microwave induced resistance oscillations (MIROs) leading to the zero-resistance states observed recently on 2D electron gases in GaAs/AlGaAs heterostructures. We stress the importance of the electrodynamic effects detected in both reflection and absorption experiments, although they are not revealed in transport experiments on very high mobility samples. We also study the exact waveform of MIROs and their damping due to temperature. A simple equation is given, which can be considered as phenomenological, which describes precisely the experimental MIROs waveform. The waveform depends only on a single parameter—the width of the Landau levels, which is related to the quantum lifetime. A very good correlation was found between the temperature dependencies of the quantum lifetime from MIROs and the transport scattering time from the electron mobility with a ratio τtr/τq≃20 . It is found that the prefactor in the equation for MIROs decays as 1/T2 with the temperature which can be explained within the distribution function model suggested by Dmitriev . The results are compared with measurements of the Shubnikov-de Haas oscillations down to 30mK on the same sample.

Increased medial longitudinal arch mobility, lower extremity kinematics, and ground reaction forces in high-arched runners.

PubMed

Williams, D S Blaise; Tierney, Robin N; Butler, Robert J

2014-01-01

Runners with high medial longitudinal arch structure demonstrate unique kinematics and kinetics that may lead to running injuries. The mobility of the midfoot as measured by the change in arch height is also suspected to play a role in lower extremity function during running. The effect of arch mobility in high-arched runners is an important factor in prescribing footwear, training, and rehabilitating the running athlete after injury. To examine the effect of medial longitudinal arch mobility on running kinematics, ground reaction forces, and loading rates in high-arched runners. Cross-sectional study. Human movement research laboratory. A total of 104 runners were screened for arch height. Runners were then identified as having high arches if the arch height index was greater than 0.5 SD above the mean. Of the runners with high arches, 11 rigid runners with the lowest arch mobility (R) were compared with 8 mobile runners with the highest arch mobility (M). Arch mobility was determined by calculating the left arch height index in all runners. Three-dimensional motion analysis of running over ground. Rearfoot and tibial angular excursions, eversion-to-tibial internal-rotation ratio, vertical ground reaction forces, and the associated loading rates. Runners with mobile arches exhibited decreased tibial internal-rotation excursion (mobile: 5.6° ± 2.3° versus rigid: 8.0° ± 3.0°), greater eversion-to-tibial internal-rotation ratio (mobile: 2.1 ± 0.8 versus rigid: 1.5 ± 0.5), decreased second peak vertical ground reaction force values (mobile: 2.3 ± 0.2 × body weight versus rigid: 2.4 ± 0.1 × body weight), and decreased vertical loading rate values (mobile: 55.7 ± 14.1 × body weight/s versus rigid: 65.9 ± 11.4 × body weight/s). Based on the results of this study, it appears that runners with high arch structure but differing arch mobility exhibited differences in select lower extremity movement patterns and forces. Future authors should investigate the impact of arch mobility on running-related injuries.

Two-dimensional radial laser scanning for circular marker detection and external mobile robot tracking.

PubMed

Teixidó, Mercè; Pallejà, Tomàs; Font, Davinia; Tresanchez, Marcel; Moreno, Javier; Palacín, Jordi

2012-11-28

This paper presents the use of an external fixed two-dimensional laser scanner to detect cylindrical targets attached to moving devices, such as a mobile robot. This proposal is based on the detection of circular markers in the raw data provided by the laser scanner by applying an algorithm for outlier avoidance and a least-squares circular fitting. Some experiments have been developed to empirically validate the proposal with different cylindrical targets in order to estimate the location and tracking errors achieved, which are generally less than 20 mm in the area covered by the laser sensor. As a result of the validation experiments, several error maps have been obtained in order to give an estimate of the uncertainty of any location computed. This proposal has been validated with a medium-sized mobile robot with an attached cylindrical target (diameter 200 mm). The trajectory of the mobile robot was estimated with an average location error of less than 15 mm, and the real location error in each individual circular fitting was similar to the error estimated with the obtained error maps. The radial area covered in this validation experiment was up to 10 m, a value that depends on the radius of the cylindrical target and the radial density of the distance range points provided by the laser scanner but this area can be increased by combining the information of additional external laser scanners.

Hybrid-dimensional modelling of two-phase flow through fractured porous media with enhanced matrix fracture transmission conditions

NASA Astrophysics Data System (ADS)

Brenner, Konstantin; Hennicker, Julian; Masson, Roland; Samier, Pierre

2018-03-01

In this work, we extend, to two-phase flow, the single-phase Darcy flow model proposed in [26], [12] in which the (d - 1)-dimensional flow in the fractures is coupled with the d-dimensional flow in the matrix. Three types of so called hybrid-dimensional two-phase Darcy flow models are proposed. They all account for fractures acting either as drains or as barriers, since they allow pressure jumps at the matrix-fracture interfaces. The models also permit to treat gravity dominated flow as well as discontinuous capillary pressure at the material interfaces. The three models differ by their transmission conditions at matrix fracture interfaces: while the first model accounts for the nonlinear two-phase Darcy flux conservations, the second and third ones are based on the linear single phase Darcy flux conservations combined with different approximations of the mobilities. We adapt the Vertex Approximate Gradient (VAG) scheme to this problem, in order to account for anisotropy and heterogeneity aspects as well as for applicability on general meshes. Several test cases are presented to compare our hybrid-dimensional models to the generic equi-dimensional model, in which fractures have the same dimension as the matrix, leading to deep insight about the quality of the proposed reduced models.

Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ye, Tianyu; Liu, Han -Chun; Wang, Zhuo

A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularly- polarized microwave excitation indicates a profound difference in the response observed upon rotating the microwave launcher for the two cases, although circularly polarized microwave radiation induced magnetoresistance oscillations observed at low magnetic fields are similar to the oscillations observed with linearly polarized radiation. For the linearly polarized radiation, the magnetoresistive response is a strong sinusoidal function of the launcher rotation (or linear polarization) angle, θ. As a result, for circularly polarized radiation, the oscillatory magnetoresistive response ismore » hardly sensitive to θ.« less

Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation

DOE PAGES

Ye, Tianyu; Liu, Han -Chun; Wang, Zhuo; ...

2015-10-09

A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularly- polarized microwave excitation indicates a profound difference in the response observed upon rotating the microwave launcher for the two cases, although circularly polarized microwave radiation induced magnetoresistance oscillations observed at low magnetic fields are similar to the oscillations observed with linearly polarized radiation. For the linearly polarized radiation, the magnetoresistive response is a strong sinusoidal function of the launcher rotation (or linear polarization) angle, θ. As a result, for circularly polarized radiation, the oscillatory magnetoresistive response ismore » hardly sensitive to θ.« less

SHER: a colored petri net based random mobility model for wireless communications.

PubMed

Khan, Naeem Akhtar; Ahmad, Farooq; Khan, Sher Afzal

2015-01-01

In wireless network research, simulation is the most imperative technique to investigate the network's behavior and validation. Wireless networks typically consist of mobile hosts; therefore, the degree of validation is influenced by the underlying mobility model, and synthetic models are implemented in simulators because real life traces are not widely available. In wireless communications, mobility is an integral part while the key role of a mobility model is to mimic the real life traveling patterns to study. The performance of routing protocols and mobility management strategies e.g. paging, registration and handoff is highly dependent to the selected mobility model. In this paper, we devise and evaluate the Show Home and Exclusive Regions (SHER), a novel two-dimensional (2-D) Colored Petri net (CPN) based formal random mobility model, which exhibits sociological behavior of a user. The model captures hotspots where a user frequently visits and spends time. Our solution eliminates six key issues of the random mobility models, i.e., sudden stops, memoryless movements, border effect, temporal dependency of velocity, pause time dependency, and speed decay in a single model. The proposed model is able to predict the future location of a mobile user and ultimately improves the performance of wireless communication networks. The model follows a uniform nodal distribution and is a mini simulator, which exhibits interesting mobility patterns. The model is also helpful to those who are not familiar with the formal modeling, and users can extract meaningful information with a single mouse-click. It is noteworthy that capturing dynamic mobility patterns through CPN is the most challenging and virulent activity of the presented research. Statistical and reachability analysis techniques are presented to elucidate and validate the performance of our proposed mobility model. The state space methods allow us to algorithmically derive the system behavior and rectify the errors of our proposed model.

SHER: A Colored Petri Net Based Random Mobility Model for Wireless Communications

PubMed Central

Khan, Naeem Akhtar; Ahmad, Farooq; Khan, Sher Afzal

2015-01-01

In wireless network research, simulation is the most imperative technique to investigate the network’s behavior and validation. Wireless networks typically consist of mobile hosts; therefore, the degree of validation is influenced by the underlying mobility model, and synthetic models are implemented in simulators because real life traces are not widely available. In wireless communications, mobility is an integral part while the key role of a mobility model is to mimic the real life traveling patterns to study. The performance of routing protocols and mobility management strategies e.g. paging, registration and handoff is highly dependent to the selected mobility model. In this paper, we devise and evaluate the Show Home and Exclusive Regions (SHER), a novel two-dimensional (2-D) Colored Petri net (CPN) based formal random mobility model, which exhibits sociological behavior of a user. The model captures hotspots where a user frequently visits and spends time. Our solution eliminates six key issues of the random mobility models, i.e., sudden stops, memoryless movements, border effect, temporal dependency of velocity, pause time dependency, and speed decay in a single model. The proposed model is able to predict the future location of a mobile user and ultimately improves the performance of wireless communication networks. The model follows a uniform nodal distribution and is a mini simulator, which exhibits interesting mobility patterns. The model is also helpful to those who are not familiar with the formal modeling, and users can extract meaningful information with a single mouse-click. It is noteworthy that capturing dynamic mobility patterns through CPN is the most challenging and virulent activity of the presented research. Statistical and reachability analysis techniques are presented to elucidate and validate the performance of our proposed mobility model. The state space methods allow us to algorithmically derive the system behavior and rectify the errors of our proposed model. PMID:26267860

Contaminant screening of wastewater with HPLC-IM-qTOF-MS and LC+LC-IM-qTOF-MS using a CCS database.

PubMed

Stephan, Susanne; Hippler, Joerg; Köhler, Timo; Deeb, Ahmad A; Schmidt, Torsten C; Schmitz, Oliver J

2016-09-01

Non-target analysis has become an important tool in the field of water analysis since a broad variety of pollutants from different sources are released to the water cycle. For identification of compounds in such complex samples, liquid chromatography coupled to high resolution mass spectrometry are often used. The introduction of ion mobility spectrometry provides an additional separation dimension and allows determining collision cross sections (CCS) of the analytes as a further physicochemical constant supporting the identification. A CCS database with more than 500 standard substances including drug-like compounds and pesticides was used for CCS data base search in this work. A non-target analysis of a wastewater sample was initially performed with high performance liquid chromatography (HPLC) coupled to an ion mobility-quadrupole-time of flight mass spectrometer (IM-qTOF-MS). A database search including exact mass (±5 ppm) and CCS (±1 %) delivered 22 different compounds. Furthermore, the same sample was analyzed with a two-dimensional LC method, called LC+LC, developed in our group for the coupling to IM-qTOF-MS. This four dimensional separation platform revealed 53 different compounds, identified over exact mass and CCS, in the examined wastewater sample. It is demonstrated that the CCS database can also help to distinguish between isobaric structures exemplified for cyclophosphamide and ifosfamide. Graphical Abstract Scheme of sample analysis and database screening.

Optical spin orientation of minority holes in a modulation-doped GaAs/(Ga,Al)As quantum well

NASA Astrophysics Data System (ADS)

Koudinov, A. V.; Dzhioev, R. I.; Korenev, V. L.; Sapega, V. F.; Kusrayev, Yu. G.

2016-04-01

The optical spin orientation effect in a GaAs/(Ga,Al)As quantum well containing a high-mobility two-dimensional electron gas was found to be due to spin-polarized minority carriers, the holes. The observed oscillations of both the intensity and polarization of the photoluminescence in a magnetic field are well described in a model whose main elements are resonant absorption of the exciting light by the Landau levels and mixing of the heavy- and light-hole subbands. After subtraction of these effects, the observed influence of magnetic fields on the spin polarization can be well interpreted by a standard approach of the optical orientation method. The spin relaxation of holes is controlled by the Dyakonov-Perel' mechanism. Deceleration of the spin relaxation by the magnetic field occurs through the Ivchenko mechanism—due to the cyclotron motion of holes. Mobility of holes was found to be two orders of magnitude smaller than that of electrons, being determined by the scattering of holes by the electron gas.

Evolutionary programming-based univector field navigation method for past mobile robots.

PubMed

Kim, Y J; Kim, J H; Kwon, D S

2001-01-01

Most of navigation techniques with obstacle avoidance do not consider the robot orientation at the target position. These techniques deal with the robot position only and are independent of its orientation and velocity. To solve these problems this paper proposes a novel univector field method for fast mobile robot navigation which introduces a normalized two dimensional vector field. The method provides fast moving robots with the desired posture at the target position and obstacle avoidance. To obtain the sub-optimal vector field, a function approximator is used and trained by evolutionary programming. Two kinds of vector fields are trained, one for the final posture acquisition and the other for obstacle avoidance. Computer simulations and real experiments are carried out for a fast moving mobile robot to demonstrate the effectiveness of the proposed scheme.

Laser Direct Writing Process for Making Electrodes and High-k Sol-Gel ZrO2 for Boosting Performances of MoS2 Transistors.

PubMed

Kwon, Hyuk-Jun; Jang, Jaewon; Grigoropoulos, Costas P

2016-04-13

A series of two-dimensional (2D) transition metal dichalcogenides (TMDCs), including molybdenum disulfide (MoS2), can be attractive materials for photonic and electronic applications due to their exceptional properties. Among these unique properties, high mobility of 2D TMDCs enables realization of high-performance nanoelectronics based on a thin film transistor (TFT) platform. In this contribution, we report highly enhanced field effect mobility (μ(eff) = 50.1 cm(2)/(V s), ∼2.5 times) of MoS2 TFTs through the sol-gel processed high-k ZrO2 (∼22.0) insulator, compared to those of typical MoS2/SiO2/Si structures (μ(eff) = 19.4 cm(2)/(V s)) because a high-k dielectric layer can suppress Coulomb electron scattering and reduce interface trap concentration. Additionally, in order to avoid costly conventional mask based photolithography and define the patterns, we employ a simple laser direct writing (LDW) process. This process allows precise and flexible control with reasonable resolution (up to ∼10 nm), depending on the system, and enables fabrication of arbitrarily patterned devices. Taking advantage of continuing developments in laser technology offers a substantial cost decrease, and LDW may emerge as a promising technology.

3D Digital Smile Design With a Mobile Phone and Intraoral Optical Scanner.

PubMed

Daher, René; Ardu, Stefano; Vjero, Osela; Krejci, Ivo

2018-06-01

Extraoral facial scanning using a mobile phone has emerged as a viable, cost-effective option for certain applications not requiring high precision, such as patient education and 3-dimensional (3D) digital smile design. This technological development is particularly promising for general practitioners (GPs) who may not be able to invest in expensive,complex digital impressioning devices. This article describes and illustrates a relatively simple and accessible workflow that avails digital 3D facial scanning benefits to GPs.

Enhanced all-optical modulation in a graphene-coated fibre with low insertion loss

PubMed Central

Zhang, Haojie; Healy, Noel; Shen, Li; Huang, Chung Che; Hewak, Daniel W.; Peacock, Anna C.

2016-01-01

Graphene is a highly versatile two-dimensional material platform that offers exceptional optical and electrical properties. Of these, its dynamic conductivity and low effective carrier mass are of particular interest for optoelectronic applications as they underpin the material’s broadband nonlinear optical absorption and ultra-fast carrier mobility, respectively. In this paper, we utilize these phenomena to demonstrate a high-speed, in-fibre optical modulator developed on a side-polished optical fibre platform. An especially low insertion loss (<1 dB) was achieved by polishing the fibre to a near atomically smooth surface (<1 nm RMS), which minimized scattering and ensured excellent contact between the graphene film and the fibre. In order to enhance the light-matter interaction, the graphene film is coated with a high index polyvinyl butyral layer, which has the added advantage of acting as a barrier to the surrounding environment. Using this innovative approach, we have fabricated a robust and stable all-fibre device with an extinction ratio as high as 9 dB and operation bandwidth of 0.5 THz. These results represent a key step towards the integration of low-dimensional materials within standard telecoms networks. PMID:27001353

Well-balanced high-order centered schemes on unstructured meshes for shallow water equations with fixed and mobile bed

NASA Astrophysics Data System (ADS)

Canestrelli, Alberto; Dumbser, Michael; Siviglia, Annunziato; Toro, Eleuterio F.

2010-03-01

In this paper, we study the numerical approximation of the two-dimensional morphodynamic model governed by the shallow water equations and bed-load transport following a coupled solution strategy. The resulting system of governing equations contains non-conservative products and it is solved simultaneously within each time step. The numerical solution is obtained using a new high-order accurate centered scheme of the finite volume type on unstructured meshes, which is an extension of the one-dimensional PRICE-C scheme recently proposed in Canestrelli et al. (2009) [5]. The resulting first-order accurate centered method is then extended to high order of accuracy in space via a high order WENO reconstruction technique and in time via a local continuous space-time Galerkin predictor method. The scheme is applied to the shallow water equations and the well-balanced properties of the method are investigated. Finally, we apply the new scheme to different test cases with both fixed and movable bed. An attractive future of the proposed method is that it is particularly suitable for engineering applications since it allows practitioners to adopt the most suitable sediment transport formula which better fits the field data.

Model of chiral spin liquids with Abelian and non-Abelian topological phases

DOE PAGES

Chen, Jyong-Hao; Mudry, Christopher; Chamon, Claudio; ...

2017-12-15

In this article, we present a two-dimensional lattice model for quantum spin-1/2 for which the low-energy limit is governed by four flavors of strongly interacting Majorana fermions. We study this low-energy effective theory using two alternative approaches. The first consists of a mean-field approximation. The second consists of a random phase approximation (RPA) for the single-particle Green's functions of the Majorana fermions built from their exact forms in a certain one-dimensional limit. The resulting phase diagram consists of two competing chiral phases, one with Abelian and the other with non-Abelian topological order, separated by a continuous phase transition. Remarkably, themore » Majorana fermions propagate in the two-dimensional bulk, as in the Kitaev model for a spin liquid on the honeycomb lattice. We identify the vison fields, which are mobile (they are static in the Kitaev model) domain walls propagating along only one of the two space directions.« less

Model of chiral spin liquids with Abelian and non-Abelian topological phases

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Jyong-Hao; Mudry, Christopher; Chamon, Claudio

In this article, we present a two-dimensional lattice model for quantum spin-1/2 for which the low-energy limit is governed by four flavors of strongly interacting Majorana fermions. We study this low-energy effective theory using two alternative approaches. The first consists of a mean-field approximation. The second consists of a random phase approximation (RPA) for the single-particle Green's functions of the Majorana fermions built from their exact forms in a certain one-dimensional limit. The resulting phase diagram consists of two competing chiral phases, one with Abelian and the other with non-Abelian topological order, separated by a continuous phase transition. Remarkably, themore » Majorana fermions propagate in the two-dimensional bulk, as in the Kitaev model for a spin liquid on the honeycomb lattice. We identify the vison fields, which are mobile (they are static in the Kitaev model) domain walls propagating along only one of the two space directions.« less

New Material Transistor with Record-High Field-Effect Mobility among Wide-Band-Gap Semiconductors.

PubMed

Shih, Cheng Wei; Chin, Albert

2016-08-03

At an ultrathin 5 nm, we report a new high-mobility tin oxide (SnO2) metal-oxide-semiconductor field-effect transistor (MOSFET) exhibiting extremely high field-effect mobility values of 279 and 255 cm(2)/V-s at 145 and 205 °C, respectively. These values are the highest reported mobility values among all wide-band-gap semiconductors of GaN, SiC, and metal-oxide MOSFETs, and they also exceed those of silicon devices at the aforementioned elevated temperatures. For the first time among existing semiconductor transistors, a new device physical phenomenon of a higher mobility value was measured at 45-205 °C than at 25 °C, which is due to the lower optical phonon scattering by the large SnO2 phonon energy. Moreover, the high on-current/off-current of 4 × 10(6) and the positive threshold voltage of 0.14 V at 25 °C are significantly better than those of a graphene transistor. This wide-band-gap SnO2 MOSFET exhibits high mobility in a 25-205 °C temperature range, a wide operating voltage of 1.5-20 V, and the ability to form on an amorphous substrate, rendering it an ideal candidate for multifunctional low-power integrated circuit (IC), display, and brain-mimicking three-dimensional IC applications.

The spatiotemporal pattern of Src activation at lipid rafts revealed by diffusion-corrected FRET imaging.

PubMed

Lu, Shaoying; Ouyang, Mingxing; Seong, Jihye; Zhang, Jin; Chien, Shu; Wang, Yingxiao

2008-07-25

Genetically encoded biosensors based on fluorescence resonance energy transfer (FRET) have been widely applied to visualize the molecular activity in live cells with high spatiotemporal resolution. However, the rapid diffusion of biosensor proteins hinders a precise reconstruction of the actual molecular activation map. Based on fluorescence recovery after photobleaching (FRAP) experiments, we have developed a finite element (FE) method to analyze, simulate, and subtract the diffusion effect of mobile biosensors. This method has been applied to analyze the mobility of Src FRET biosensors engineered to reside at different subcompartments in live cells. The results indicate that the Src biosensor located in the cytoplasm moves 4-8 folds faster (0.93+/-0.06 microm(2)/sec) than those anchored on different compartments in plasma membrane (at lipid raft: 0.11+/-0.01 microm(2)/sec and outside: 0.18+/-0.02 microm(2)/sec). The mobility of biosensor at lipid rafts is slower than that outside of lipid rafts and is dominated by two-dimensional diffusion. When this diffusion effect was subtracted from the FRET ratio images, high Src activity at lipid rafts was observed at clustered regions proximal to the cell periphery, which remained relatively stationary upon epidermal growth factor (EGF) stimulation. This result suggests that EGF induced a Src activation at lipid rafts with well-coordinated spatiotemporal patterns. Our FE-based method also provides an integrated platform of image analysis for studying molecular mobility and reconstructing the spatiotemporal activation maps of signaling molecules in live cells.

Assessment of extremely low frequency magnetic field exposure from GSM mobile phones.

PubMed

Calderón, Carolina; Addison, Darren; Mee, Terry; Findlay, Richard; Maslanyj, Myron; Conil, Emmanuelle; Kromhout, Hans; Lee, Ae-kyoung; Sim, Malcolm R; Taki, Masao; Varsier, Nadège; Wiart, Joe; Cardis, Elisabeth

2014-04-01

Although radio frequency (RF) electromagnetic fields emitted by mobile phones have received much attention, relatively little is known about the extremely low frequency (ELF) magnetic fields emitted by phones. This paper summarises ELF magnetic flux density measurements on global system for mobile communications (GSM) mobile phones, conducted as part of the MOBI-KIDS epidemiological study. The main challenge is to identify a small number of generic phone models that can be used to classify the ELF exposure for the different phones reported in the study. Two-dimensional magnetic flux density measurements were performed on 47 GSM mobile phones at a distance of 25 mm. Maximum resultant magnetic flux density values at 217 Hz had a geometric mean of 221 (+198/-104) nT. Taking into account harmonic data, measurements suggest that mobile phones could make a substantial contribution to ELF exposure in the general population. The maximum values and easily available variables were poorly correlated. However, three groups could be defined on the basis of field pattern indicating that manufacturers and shapes of mobile phones may be the important parameters linked to the spatial characteristics of the magnetic field, and the categorization of ELF magnetic field exposure for GSM phones in the MOBI-KIDS study may be achievable on the basis of a small number of representative phones. Such categorization would result in a twofold exposure gradient between high and low exposure based on type of phone used, although there was overlap in the grouping. © 2013 Wiley Periodicals, Inc.

Damping of acoustic flexural phonons in silicene: influence on high-field electronic transport

NASA Astrophysics Data System (ADS)

Rengel, Raúl; Iglesias, José M.; Mokhtar Hamham, El; Martín, María J.

2018-06-01

Silicene is a two-dimensional buckled material with broken horizontal mirror symmetry and Dirac-like dispersion. Under such conditions, flexural acoustic (ZA) phonons play a dominant role. Consequently, it is necessary to consider some suppression mechanism for electron–phonon interactions with long wavelengths in order to reach mobilities useful for electronic applications. In this work, we analyze, by means of an ensemble Monte Carlo simulator, the influence of several possibilities for the description of the effect of ZA phonon damping on electronic transport in silicene. The results show that a hard cutoff situation (total suppression for phonons with a wavelength longer than a critical one), as it has been proposed in the literature, does not yield a realistic picture regarding the electronic distribution function, and it artificially induces a negative differential resistance at moderate and high fields. Sub-parabolic dispersions, on the other hand, may provide a more realistic description in terms of the behavior of the electron distribution in the momentum space, but need extremely short cutoff wavelengths to reach functional mobility and drift velocity values.

High-Performance Schottky Diode Gas Sensor Based on the Heterojunction of Three-Dimensional Nanohybrids of Reduced Graphene Oxide-Vertical ZnO Nanorods on an AlGaN/GaN Layer.

PubMed

Minh Triet, Nguyen; Thai Duy, Le; Hwang, Byeong-Ung; Hanif, Adeela; Siddiqui, Saqib; Park, Kyung-Ho; Cho, Chu-Young; Lee, Nae-Eung

2017-09-13

A Schottky diode based on a heterojunction of three-dimensional (3D) nanohybrid materials, formed by hybridizing reduced graphene oxide (RGO) with epitaxial vertical zinc oxide nanorods (ZnO NRs) and Al 0.27 GaN 0.73 (∼25 nm)/GaN is presented as a new class of high-performance chemical sensors. The RGO nanosheet layer coated on the ZnO NRs enables the formation of a direct Schottky contact with the AlGaN layer. The sensing results of the Schottky diode with respect to NO 2 , SO 2 , and HCHO gases exhibit high sensitivity (0.88-1.88 ppm -1 ), fast response (∼2 min), and good reproducibility down to 120 ppb concentration levels at room temperature. The sensing mechanism of the Schottky diode can be explained by the effective modulation of the reverse saturation current due to the change in thermionic emission carrier transport caused by ultrasensitive changes in the Schottky barrier of a van der Waals heterostructure between RGO and AlGaN layers upon interaction with gas molecules. Advances in the design of a Schottky diode gas sensor based on the heterojunction of high-mobility two-dimensional electron gas channel and highly responsive 3D-engineered sensing nanomaterials have potential not only for the enhancement of sensitivity and selectivity but also for improving operation capability at room temperature.

3D shape measurement system developed on mobile platform

NASA Astrophysics Data System (ADS)

Wu, Zhoujie; Chang, Meng; Shi, Bowen; Zhang, Qican

2017-02-01

Three-dimensional (3-D) shape measurement technology based on structured light has become one hot research field inspired by the increasing requirements. Many methods have been implemented and applied in the industry applications, but most of their equipments are large and complex, cannot be portable. Meanwhile, the popularity of the smart mobile terminals, such as smart phones, provides a platform for the miniaturization and portability of this technology. The measurement system based on phase-shift algorithm and Gray-code pattern under the Android platform on a mobile phone is mainly studied and developed, and it has been encapsulated into a mobile phone application in order to reconstruct 3-D shape data in the employed smart phone easily and quickly. The experimental results of two measured object are given in this paper and demonstrate the application we developed in the mobile platform is effective.

Surface electrons in inverted layers of p-HgCdTe

NASA Technical Reports Server (NTRS)

Schacham, Samuel E.; Finkman, Eliezer

1990-01-01

Anodic oxide passivation of p-type HgCdTe generates an inversion layer. Extremely high Hall mobility data for electrons in this layer indicated the presence of a two-dimensional electron gas. This is verified by use of the Shubnikov-de Haas effect from 1.45 to 4.15 K. Data are extracted utilizing a numerical second derivative of dc measurement. Three sub-bands are detected. Their relative occupancies are in excellent agreement with theory and with experimental results obtained on anodic oxide as accumulation layers of n-type HgCdTe. The effective mass derived is comparable to what was expected.

Numerical exploration of Kaldorian interregional macrodynamics: stability and the trade threshold for business cycles under fixed exchange rates.

PubMed

Asada, Toichiro; Douskos, Christos; Markellos, Panagiotis

2011-01-01

The stability of equilibrium and the possibility of generation of business cycles in a discrete interregional Kaldorian macrodynamic model with fixed exchange rates are explored using numerical methods. One of the aims is to illustrate the feasibility and effectiveness of the numerical approach for dynamical systems of moderately high dimensionality and several parameters. The model considered is five-dimensional with four parameters, the speeds of adjustment of the goods markets and the degrees of economic interactions between the regions through trade and capital movement. Using a grid search method for the determination of the region of stability of equilibrium in two-dimensional parameter subspaces, and coefficient criteria for the flip bifurcation - and Hopf bifurcation - curve, we determine the stability region in several parameter ranges and identify Hopf bifurcation curves when they exist. It is found that interregional cycles emerge only for sufficient interregional trade. The relevant threshold is predicted by the model at 14 - 16 % of trade transactions. By contrast, no minimum level of capital mobility exists in a global sense as a requirement for the emergence of interregional cycles; the main conclusion being, therefore, that cycles may occur for very low levels of capital mobility if trade is sufficient. Examples of bifurcation and Lyapunov exponent diagrams illustrating the occurrence of cycles or period doubling, and examples of the development of the occurring cycles, are given. Both supercritical and subcritical bifurcations are found to occur, the latter type indicating coexistence of a point and a cyclical attractor.

Embed dynamic content in your poster.

PubMed

Hutchins, B Ian

2013-01-29

A new technology has emerged that will facilitate the presentation of dynamic or otherwise inaccessible data on posters at scientific meetings. Video, audio, or other digital files hosted on mobile-friendly sites can be linked to through a quick response (QR) code, a two-dimensional barcode that can be scanned by smartphones, which then display the content. This approach is more affordable than acquiring tablet computers for playing dynamic content and can reach many users at large conferences. This resource details how to host videos, generate QR codes, and view the associated files on mobile devices.

The mobility of landslide: how the flowing volume controls the mobility?

NASA Astrophysics Data System (ADS)

Sato, H.; Kurita, K.; Baratoux, D.

2009-12-01

Landslide simulation by two dimensional discrete element method has been carried out in order to re-examine the volume effect on the run-out efficiency (mobility). The mobility of natural landslides, defined by run-out length divided by drop height, is empirically known to increase with the volumes of debris (Legros, 2002), and the essential cause has been discussed for several decades. While various mechanisms are proposed such as air entrapment (Kent, 1966; Shreve, 1968), self-lubrication of polydisperse grains (Hsu, 1975; Campbell, 1989; Straub, 1997), acoustic fluidization (Melosh, 1979), and continuous fragmentation (Kilburn and Sorensen, 1998), universal explanation is not still obtained. The inadequacy of the mobility parameter itself and also the geometry effect have been recently pointed out as the fundamental cause of apparent increase in mobility with volumes (Soukhovitskaya and Manga, 2006; Lajeunesse et al., 2006; Staron and Lajeunesse, 2009). In our numerical experiments using various particle numbers from 500 to 50,000 with self-similar initial geometry, we found systematic increase in mobility as a function of volume without geometry effect or any particular effect. The remarkable point is that the highly sheared zone is kept for longer traveling distance at the bottom of the layer as the particle number increases. Such state is supposed to be the transition state of shear diffusion into the entire body, and induces temporary small friction coefficient compared to the steady-state flow. The relaxation time of this transition depends on the propagation of the basal shear into a granular media, which increases with flow thickness (Hatano, 2009). Thus longer relaxation time for a larger volume allows longer distance to stop, which could be the fundamental cause of volume effect on the mobility in natural landslides.

Miscut dependent surface evolution in the process of N-polar GaN(000 1 bar) growth under N-rich condition

NASA Astrophysics Data System (ADS)

Krzyżewski, Filip; Załuska-Kotur, Magdalena A.; Turski, Henryk; Sawicka, Marta; Skierbiszewski, Czesław

2017-01-01

The evolution of surface morphology during the growth of N-polar (000 1 bar) GaN under N-rich conditions is studied by kinetic Monte Carlo (kMC) simulations for two substrates miscuts 2° and 4°. The results are compared with experimentally observed surface morphologies of (000 1 bar) GaN layers grown by plasma-assisted molecular beam epitaxy. The proposed kMC two-component model of GaN(000 1 bar) surface where both types of atoms, nitrogen and gallium, attach to the surface and diffuse independently shows that at relatively high rates of the step flow (miscut angle < 2 °) the low mobility of gallium adatoms causes surface instabilities and leads to experimentally observed roughening while for low rates of the step flow (miscut 4°), smooth surface can be obtained. In the presence of almost immobile nitrogen atoms under N-rich conditions crystal growth is realized by the process of two-dimensional island nucleation and coalescence. Larger crystal miscut, lower growth rate or higher temperature results in similar effect of the surface smoothening. We show that the surface also smoothens for the growth conditions with very high N-excess. In the presence of large number of nitrogen atoms the mobility of gallium atoms changes locally thus providing easier coalescence of separated island.

Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

NASA Astrophysics Data System (ADS)

Yang, Liu; Chang-Chun, Chai; Yin-Tang, Yang; Jing, Sun; Zhi-Peng, Li

2016-04-01

In this paper, we present the damage effect and mechanism of high power microwave (HPM) on AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (pHEMT) of low-noise amplifier (LNA). A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS). Experimental results accord well with the simulation of our model. Project supported by the National Basic Research Program of China (Grant No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (Grant No. 2015-0214.XY.K).

Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2

PubMed Central

Jadwiszczak, Jakub; O’Callaghan, Colin; Zhou, Yangbo; Fox, Daniel S.; Weitz, Eamonn; Keane, Darragh; Cullen, Conor P.; O’Reilly, Ian; Downing, Clive; Shmeliov, Aleksey; Maguire, Pierce; Gough, John J.; McGuinness, Cormac; Ferreira, Mauro S.; Bradley, A. Louise; Boland, John J.; Duesberg, Georg S.; Nicolosi, Valeria; Zhang, Hongzhou

2018-01-01

Precise tunability of electronic properties of two-dimensional (2D) nanomaterials is a key goal of current research in this field of materials science. Chemical modification of layered transition metal dichalcogenides leads to the creation of heterostructures of low-dimensional variants of these materials. In particular, the effect of oxygen-containing plasma treatment on molybdenum disulfide (MoS2) has long been thought to be detrimental to the electrical performance of the material. We show that the mobility and conductivity of MoS2 can be precisely controlled and improved by systematic exposure to oxygen/argon plasma and characterize the material using advanced spectroscopy and microscopy. Through complementary theoretical modeling, which confirms conductivity enhancement, we infer the role of a transient 2D substoichiometric phase of molybdenum trioxide (2D-MoOx) in modulating the electronic behavior of the material. Deduction of the beneficial role of MoOx will serve to open the field to new approaches with regard to the tunability of 2D semiconductors by their low-dimensional oxides in nano-modified heterostructures. PMID:29511736

The high mobility group protein Abf2p influences the level of yeast mitochondrial DNA recombination intermediates in vivo.

PubMed

MacAlpine, D M; Perlman, P S; Butow, R A

1998-06-09

Abf2p is a high mobility group (HMG) protein found in yeast mitochondria that is required for the maintenance of wild-type (rho+) mtDNA in cells grown on fermentable carbon sources, and for efficient recombination of mtDNA markers in crosses. Here, we show by two-dimensional gel electrophoresis that Abf2p promotes or stabilizes Holliday recombination junction intermediates in rho+ mtDNA in vivo but does not influence the high levels of recombination intermediates readily detected in the mtDNA of petite mutants (rho-). mtDNA recombination junctions are not observed in rho+ mtDNA of wild-type cells but are elevated to detectable levels in cells with a null allele of the MGT1 gene (Deltamgt1), which codes for a mitochondrial cruciform-cutting endonuclease. The level of recombination intermediates in rho+ mtDNA of Deltamgt1 cells is decreased about 10-fold if those cells contain a null allele of the ABF2 gene. Overproduction of Abf2p by >/= 10-fold in wild-type rho+ cells, which leads to mtDNA instability, results in a dramatic increase in mtDNA recombination intermediates. Specific mutations in the two Abf2p HMG boxes required for DNA binding diminishes these responses. We conclude that Abf2p functions in the recombination of rho+ mtDNA.

High-quality infrared imaging with graphene photodetectors at room temperature.

PubMed

Guo, Nan; Hu, Weida; Jiang, Tao; Gong, Fan; Luo, Wenjin; Qiu, Weicheng; Wang, Peng; Liu, Lu; Wu, Shiwei; Liao, Lei; Chen, Xiaoshuang; Lu, Wei

2016-09-21

Graphene, a two-dimensional material, is expected to enable broad-spectrum and high-speed photodetection because of its gapless band structure, ultrafast carrier dynamics and high mobility. We demonstrate a multispectral active infrared imaging by using a graphene photodetector based on hybrid response mechanisms at room temperature. The high-quality images with optical resolutions of 418 nm, 657 nm and 877 nm and close-to-theoretical-limit Michelson contrasts of 0.997, 0.994, and 0.996 have been acquired for 565 nm, 1550 nm, and 1815 nm light imaging measurements by using an unbiased graphene photodetector, respectively. Importantly, by carefully analyzing the results of Raman mapping and numerical simulations for the response process, the formation of hybrid photocurrents in graphene detectors is attributed to the synergistic action of photovoltaic and photo-thermoelectric effects. The initial application to infrared imaging will help promote the development of high performance graphene-based infrared multispectral detectors.

Chiral zero energy modes in two-dimensional disordered Dirac semimetals

NASA Astrophysics Data System (ADS)

Liu, Lei; Yu, Yan; Wu, Hai-Bin; Zhang, Yan-Yang; Liu, Jian-Jun; Li, Shu-Shen

2018-04-01

The vacancy-induced chiral zero energy modes (CZEMs) of chiral-unitary-class (AIII) and chiral-symplectic-class (CII) two-dimensional (2 D ) disordered Dirac semimetals realized on a square bipartite lattice are investigated numerically by using the Kubo-Greenwood formula with the kernel polynomial method. The results show that, for both systems, the CZEMs exhibit the critical delocalization. The CZEM conductivity remains a robust constant (i.e., σ CZEM≈1.05 e2/h ), which is insensitive to the sample sizes, the vacancy concentrations, and the numbers of moments of Chebyshev polynomials, i.e., the dephasing strength. For both kinds of chiral systems, the CZEM conductivities are almost identical. However, they are not equal to that of graphene (i.e., 4 e2/π h ), which belongs to the chiral orthogonal class (BDI) semimetal on a 2 D hexagonal bipartite lattice. In addition, for the case that the vacancy concentrations are different in the two sublattices, the CZEM conductivity vanishes, and thus both systems exhibit localization at the Dirac point. Moreover, a band gap and a mobility gap open around zero energy. The widths of the energy gaps and mobility gaps are increasing with larger vacancy concentration difference. The width of the mobility gap is greater than that of the band gap, and a δ -function-like peak of density of states emerges at the Dirac point within the band gap, implying the existence of numerous localized states.

Driven tracer with absolute negative mobility

NASA Astrophysics Data System (ADS)

Cividini, J.; Mukamel, D.; Posch, H. A.

2018-02-01

Instances of negative mobility, where a system responds to a perturbation in a way opposite to naive expectation, have been studied theoretically and experimentally in numerous nonequilibrium systems. In this work we show that absolute negative mobility (ANM), whereby current is produced in a direction opposite to the drive, can occur around equilibrium states. This is demonstrated with a simple one-dimensional lattice model with a driven tracer. We derive analytical predictions in the linear response regime and elucidate the mechanism leading to ANM by studying the high-density limit. We also study numerically a model of hard Brownian disks in a narrow planar channel, for which the lattice model can be viewed as a toy model. We find that the model exhibits negative differential mobility (NDM), but no ANM.

Low temperature exciton dynamics and structural changes in perylene bisimide aggregates

NASA Astrophysics Data System (ADS)

Wolter, Steffen; Magnus Westphal, Karl; Hempel, Magdalena; Würthner, Frank; Kühn, Oliver; Lochbrunner, Stefan

2017-09-01

The temperature dependent exciton dynamics of J-aggregates formed by a perylene bisimide dye is investigated down to liquid nitrogen temperature (77 K) by femtosecond pump-probe spectroscopy. The analysis of the transient absorption data using a diffusion model for the excitons does not only reveal an overall decrease of the exciton mobility, but also a change in the dimensionality of the exciton transport at low temperatures. This change in dimensionality is further investigated by kinetic Monte Carlo simulations, identifying weakly interlinked one-dimensional aggregate chains as the most likely structure at low temperatures. This causes the exciton transport to be highly anisotropic.

Fast multiview three-dimensional reconstruction method using cost volume filtering

NASA Astrophysics Data System (ADS)

Lee, Seung Joo; Park, Min Ki; Jang, In Yeop; Lee, Kwan H.

2014-03-01

As the number of customers who want to record three-dimensional (3-D) information using a mobile electronic device increases, it becomes more and more important to develop a method which quickly reconstructs a 3-D model from multiview images. A fast multiview-based 3-D reconstruction method is presented, which is suitable for the mobile environment by constructing a cost volume of the 3-D height field. This method consists of two steps: the construction of a reliable base surface and the recovery of shape details. In each step, the cost volume is constructed using photoconsistency and then it is filtered according to the multiscale. The multiscale-based cost volume filtering allows the 3-D reconstruction to maintain the overall shape and to preserve the shape details. We demonstrate the strength of the proposed method in terms of computation time, accuracy, and unconstrained acquisition environment.

A three-dimensional, time-dependent model of Mobile Bay

NASA Technical Reports Server (NTRS)

Pitts, F. H.; Farmer, R. C.

1976-01-01

A three-dimensional, time-variant mathematical model for momentum and mass transport in estuaries was developed and its solution implemented on a digital computer. The mathematical model is based on state and conservation equations applied to turbulent flow of a two-component, incompressible fluid having a free surface. Thus, bouyancy effects caused by density differences between the fresh and salt water, inertia from thare river and tidal currents, and differences in hydrostatic head are taken into account. The conservation equations, which are partial differential equations, are solved numerically by an explicit, one-step finite difference scheme and the solutions displayed numerically and graphically. To test the validity of the model, a specific estuary for which scaled model and experimental field data are available, Mobile Bay, was simulated. Comparisons of velocity, salinity and water level data show that the model is valid and a viable means of simulating the hydrodynamics and mass transport in non-idealized estuaries.

Doppler Velocimetry of Current Driven Spin Helices in a Two-Dimensional Electron Gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Luyi

2013-05-17

Spins in semiconductors provide a pathway towards the development of spin-based electronics. The appeal of spin logic devices lies in the fact that the spin current is even under time reversal symmetry, yielding non-dissipative coupling to the electric field. To exploit the energy-saving potential of spin current it is essential to be able to control it. While recent demonstrations of electrical-gate control in spin-transistor configurations show great promise, operation at room temperature remains elusive. Further progress requires a deeper understanding of the propagation of spin polarization, particularly in the high mobility semiconductors used for devices. This dissertation presents the demonstrationmore » and application of a powerful new optical technique, Doppler spin velocimetry, for probing the motion of spin polarization at the level of 1 nm on a picosecond time scale. We discuss experiments in which this technique is used to measure the motion of spin helices in high mobility n-GaAs quantum wells as a function of temperature, in-plane electric field, and photoinduced spin polarization amplitude. We find that the spin helix velocity changes sign as a function of wave vector and is zero at the wave vector that yields the largest spin lifetime. This observation is quite striking, but can be explained by the random walk model that we have developed. We discover that coherent spin precession within a propagating spin density wave is lost at temperatures near 150 K. This finding is critical to understanding why room temperature operation of devices based on electrical gate control of spin current has so far remained elusive. We report that, at all temperatures, electron spin polarization co-propagates with the high-mobility electron sea, even when this requires an unusual form of separation of spin density from photoinjected electron density. Furthermore, although the spin packet co-propagates with the two-dimensional electron gas, spin diffusion is strongly suppressed by electron-electron interactions, leading to remarkable resistance to diffusive spreading of the drifting pulse of spin polarization. Finally, we show that spin helices continue propagate at the same speed as the Fermi sea even when the electron drift velocity exceeds the Fermi velocity of 107 cm s -1.« less

The Evolution of Three Dimensional Visualization for Commanding the Mars Rovers

NASA Technical Reports Server (NTRS)

Hartman, Frank R.; Wright, John; Cooper, Brian

2014-01-01

NASA's Jet Propulsion Laboratory has built and operated four rovers on the surface of Mars. Two and three dimensional visualization has been extensively employed to command both the mobility and robotic arm operations of these rovers. Stereo visualization has been an important component in this set of visualization techniques. This paper discusses the progression of the implementation and use of visualization techniques for in-situ operations of these robotic missions. Illustrative examples will be drawn from the results of using these techniques over more than ten years of surface operations on Mars.

Magnetotransport studies of mobility limiting mechanisms in undoped Si/SiGe heterostructures

NASA Astrophysics Data System (ADS)

Mi, X.; Hazard, T. M.; Payette, C.; Wang, K.; Zajac, D. M.; Cady, J. V.; Petta, J. R.

2015-07-01

We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms. By analyzing data from 26 different heterostructures, we observe a strong correlation between the background oxygen concentration in the Si quantum well and the maximum mobility. The highest-quality wafer supports a 2DEG with mobility μ =160 000 cm 2/Vs at a density n =2.17 ×1011 /cm 2 and exhibits a metal-to-insulator transition at a critical density nc=0.46 ×1011 /cm 2. We extract a valley splitting Δv˜150 μ eV at a magnetic field B =1.8 T. These results provide evidence that undoped Si/SiGe heterostructures are suitable for the fabrication of few-electron quantum dots.

Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure

NASA Astrophysics Data System (ADS)

He, Xiao-Guang; Zhao, De-Gang; Jiang, De-Sheng; Zhu, Jian-Jun; Chen, Ping; Liu, Zong-Shun; Le, Ling-Cong; Yang, Jing; Li, Xiao-Jing; Zhang, Shu-Ming; Yang, Hui

2015-09-01

AlGaN/AlN/GaN structures are grown by metalorganic vapor phase epitaxy on sapphire substrates. Influences of AlN interlayer thickness, AlGaN barrier thickness, and Al composition on the two-dimensional electron gas (2DEG) performance are investigated. Lowering the V/III ratio and enhancing the reactor pressure at the initial stage of the high-temperature GaN layer growth will prolong the GaN nuclei coalescence process and effectively improve the crystalline quality and the interface morphology, diminishing the interface roughness scattering and improving 2DEG mobility. AlGaN/AlN/GaN structure with 2DEG sheet density of 1.19 × 1013 cm-2, electron mobility of 2101 cm2·V-1·s-1, and square resistance of 249 Ω is obtained. Project support by the National Natural Science Foundation of China (Grant Nos. 61474110, 61377020, 61376089, 61223005, and 61176126), the National Science Fund for Distinguished Young Scholars, China (Grant No. 60925017), the One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).

Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors.

PubMed

Kim, Hyun-Suk; Jeon, Sang Ho; Park, Joon Seok; Kim, Tae Sang; Son, Kyoung Seok; Seon, Jong-Baek; Seo, Seok-Jun; Kim, Sun-Jae; Lee, Eunha; Chung, Jae Gwan; Lee, Hyungik; Han, Seungwu; Ryu, Myungkwan; Lee, Sang Yoon; Kim, Kinam

2013-01-01

Ultra-definition, large-area displays with three-dimensional visual effects represent megatrend in the current/future display industry. On the hardware level, such a "dream" display requires faster pixel switching and higher driving current, which in turn necessitate thin-film transistors (TFTs) with high mobility. Amorphous oxide semiconductors (AOS) such as In-Ga-Zn-O are poised to enable such TFTs, but the trade-off between device performance and stability under illumination critically limits their usability, which is related to the hampered electron-hole recombination caused by the oxygen vacancies. Here we have improved the illumination stability by substituting oxygen with nitrogen in ZnO, which may deactivate oxygen vacancies by raising valence bands above the defect levels. Indeed, the stability under illumination and electrical bias is superior to that of previous AOS-based TFTs. By achieving both mobility and stability, it is highly expected that the present ZnON TFTs will be extensively deployed in next-generation flat-panel displays.

Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors

PubMed Central

Kim, Hyun-Suk; Jeon, Sang Ho; Park, Joon Seok; Kim, Tae Sang; Son, Kyoung Seok; Seon, Jong-Baek; Seo, Seok-Jun; Kim, Sun-Jae; Lee, Eunha; Chung, Jae Gwan; Lee, Hyungik; Han, Seungwu; Ryu, Myungkwan; Lee, Sang Yoon; Kim, Kinam

2013-01-01

Ultra-definition, large-area displays with three-dimensional visual effects represent megatrend in the current/future display industry. On the hardware level, such a “dream” display requires faster pixel switching and higher driving current, which in turn necessitate thin-film transistors (TFTs) with high mobility. Amorphous oxide semiconductors (AOS) such as In-Ga-Zn-O are poised to enable such TFTs, but the trade-off between device performance and stability under illumination critically limits their usability, which is related to the hampered electron-hole recombination caused by the oxygen vacancies. Here we have improved the illumination stability by substituting oxygen with nitrogen in ZnO, which may deactivate oxygen vacancies by raising valence bands above the defect levels. Indeed, the stability under illumination and electrical bias is superior to that of previous AOS-based TFTs. By achieving both mobility and stability, it is highly expected that the present ZnON TFTs will be extensively deployed in next-generation flat-panel displays. PMID:23492854

Exact results relating spin-orbit interactions in two-dimensional strongly correlated systems

NASA Astrophysics Data System (ADS)

Kucska, Nóra; Gulácsi, Zsolt

2018-06-01

A 2D square, two-bands, strongly correlated and non-integrable system is analysed exactly in the presence of many-body spin-orbit interactions via the method of Positive Semidefinite Operators. The deduced exact ground states in the high concentration limit are strongly entangled, and given by the spin-orbit coupling are ferromagnetic and present an enhanced carrier mobility, which substantially differs for different spin projections. The described state emerges in a restricted parameter space region, which however is clearly accessible experimentally. The exact solutions are provided via the solution of a matching system of equations containing 74 coupled, non-linear and complex algebraic equations. In our knowledge, other exact results for 2D interacting systems with spin-orbit interactions are not present in the literature.

Vacuum Bloch-Siegert shift in Landau polaritons with ultra-high cooperativity

NASA Astrophysics Data System (ADS)

Li, Xinwei; Bamba, Motoaki; Zhang, Qi; Fallahi, Saeed; Gardner, Geoff C.; Gao, Weilu; Lou, Minhan; Yoshioka, Katsumasa; Manfra, Michael J.; Kono, Junichiro

2018-06-01

A two-level system resonantly interacting with an a.c. magnetic or electric field constitutes the physical basis of diverse phenomena and technologies. However, Schrödinger's equation for this seemingly simple system can be solved exactly only under the rotating-wave approximation, which neglects the counter-rotating field component. When the a.c. field is sufficiently strong, this approximation fails, leading to a resonance-frequency shift known as the Bloch-Siegert shift. Here, we report the vacuum Bloch-Siegert shift, which is induced by the ultra-strong coupling of matter with the counter-rotating component of the vacuum fluctuation field in a cavity. Specifically, an ultra-high-mobility two-dimensional electron gas inside a high-Q terahertz cavity in a quantizing magnetic field revealed ultra-narrow Landau polaritons, which exhibited a vacuum Bloch-Siegert shift up to 40 GHz. This shift, clearly distinguishable from the photon-field self-interaction effect, represents a unique manifestation of a strong-field phenomenon without a strong field.

Functionalized graphene and other two-dimensional materials for photovoltaic devices: device design and processing.

PubMed

Liu, Zhike; Lau, Shu Ping; Yan, Feng

2015-08-07

Graphene is the thinnest two-dimensional (2D) carbon material and has many advantages including high carrier mobilities and conductivity, high optical transparency, excellent mechanical flexibility and chemical stability, which make graphene an ideal material for various optoelectronic devices. The major applications of graphene in photovoltaic devices are for transparent electrodes and charge transport layers. Several other 2D materials have also shown advantages in charge transport and light absorption over traditional semiconductor materials used in photovoltaic devices. Great achievements in the applications of 2D materials in photovoltaic devices have been reported, yet numerous challenges still remain. For practical applications, the device performance should be further improved by optimizing the 2D material synthesis, film transfer, surface functionalization and chemical/physical doping processes. In this review, we will focus on the recent advances in the applications of graphene and other 2D materials in various photovoltaic devices, including organic solar cells, Schottky junction solar cells, dye-sensitized solar cells, quantum dot-sensitized solar cells, other inorganic solar cells, and perovskite solar cells, in terms of the functionalization techniques of the materials, the device design and the device performance. Finally, conclusions and an outlook for the future development of this field will be addressed.

Capillary-Force-Assisted Clean-Stamp Transfer of Two-Dimensional Materials.

PubMed

Ma, Xuezhi; Liu, Qiushi; Xu, Da; Zhu, Yangzhi; Kim, Sanggon; Cui, Yongtao; Zhong, Lanlan; Liu, Ming

2017-11-08

A simple and clean method of transferring two-dimensional (2D) materials plays a critical role in the fabrication of 2D electronics, particularly the heterostructure devices based on the artificial vertical stacking of various 2D crystals. Currently, clean transfer techniques rely on sacrificial layers or bulky crystal flakes (e.g., hexagonal boron nitride) to pick up the 2D materials. Here, we develop a capillary-force-assisted clean-stamp technique that uses a thin layer of evaporative liquid (e.g., water) as an instant glue to increase the adhesion energy between 2D crystals and polydimethylsiloxane (PDMS) for the pick-up step. After the liquid evaporates, the adhesion energy decreases, and the 2D crystal can be released. The thin liquid layer is condensed to the PDMS surface from its vapor phase, which ensures the low contamination level on the 2D materials and largely remains their chemical and electrical properties. Using this method, we prepared graphene-based transistors with low charge-neutral concentration (3 × 10 10 cm -2 ) and high carrier mobility (up to 48 820 cm 2 V -1 s -1 at room temperature) and heterostructure optoelectronics with high operation speed. Finally, a capillary-force model is developed to explain the experiment.

Chemically Triggered Formation of Two-Dimensional Epitaxial Quantum Dot Superlattices.

PubMed

Walravens, Willem; De Roo, Jonathan; Drijvers, Emile; Ten Brinck, Stephanie; Solano, Eduardo; Dendooven, Jolien; Detavernier, Christophe; Infante, Ivan; Hens, Zeger

2016-07-26

Two dimensional superlattices of epitaxially connected quantum dots enable size-quantization effects to be combined with high charge carrier mobilities, an essential prerequisite for highly performing QD devices based on charge transport. Here, we demonstrate that surface active additives known to restore nanocrystal stoichiometry can trigger the formation of epitaxial superlattices of PbSe and PbS quantum dots. More specifically, we show that both chalcogen-adding (sodium sulfide) and lead oleate displacing (amines) additives induce small area epitaxial superlattices of PbSe quantum dots. In the latter case, the amine basicity is a sensitive handle to tune the superlattice symmetry, with strong and weak bases yielding pseudohexagonal or quasi-square lattices, respectively. Through density functional theory calculations and in situ titrations monitored by nuclear magnetic resonance spectroscopy, we link this observation to the concomitantly different coordination enthalpy and ligand displacement potency of the amine. Next to that, an initial ∼10% reduction of the initial ligand density prior to monolayer formation and addition of a mild, lead oleate displacing chemical trigger such as aniline proved key to induce square superlattices with long-range, square micrometer order; an effect that is the more pronounced the larger the quantum dots. Because the approach applies to PbS quantum dots as well, we conclude that it offers a reproducible and rational method for the formation of highly ordered epitaxial quantum dot superlattices.

Modulated two-dimensional charge-carrier density in LaTiO3-layer-doped LaAlO3/SrTiO3 heterostructure.

PubMed

Nazir, Safdar; Bernal, Camille; Yang, Kesong

2015-03-11

The highly mobile two-dimensional electron gas (2DEG) formed at the polar/nonpolar LaAlO3/SrTiO3 (LAO/STO) heterostructure (HS) is a matter of great interest because of its potential applications in nanoscale solid-state devices. To realize practical implementation of the 2DEG in device design, desired physical properties such as tuned charge carrier density and mobility are necessary. In this regard, polar perovskite-based transition metal oxides can act as doping layers at the interface and are expected to tune the electronic properties of 2DEG of STO-based HS systems dramatically. Herein, we investigated the doping effects of LaTiO3(LTO) layers on the electronic properties of 2DEG at n-type (LaO)(+1)/(TiO2)(0) interface in the LAO/STO HS using spin-polarized density functional theory calculations. Our results indicate an enhancement of orbital occupation near the Fermi energy, which increases with respect to the number of LTO unit cells, resulting in a higher charge carrier density of 2DEG than that of undoped system. The enhanced charge carrier density is attributed to an extra electron introduced by the Ti 3d(1) orbitals from the LTO dopant unit cells. This conclusion is consistent with the recent experimental findings (Appl. Phys. Lett. 2013, 102, 091601). Detailed charge density and partial density of states analysis suggests that the 2DEG in the LTO-doped HS systems primarily comes from partially occupied dyz and dxz orbitals.

Transport properties of ultrathin black phosphorus on hexagonal boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Doganov, Rostislav A.; Özyilmaz, Barbaros; Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore

2015-02-23

Ultrathin black phosphorus, or phosphorene, is a two-dimensional material that allows both high carrier mobility and large on/off ratios. Similar to other atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is expected to be affected by the underlying substrate. The properties of black phosphorus have so far been studied on the widely utilized SiO{sub 2} substrate. Here, we characterize few-layer black phosphorus field effect transistors on hexagonal boron nitride—an atomically smooth and charge trap-free substrate. We measure the temperature dependence of the field effect mobility for both holes and electrons and explainmore » the observed behavior in terms of charged impurity limited transport. We find that in-situ vacuum annealing at 400 K removes the p-doping of few-layer black phosphorus on both boron nitride and SiO{sub 2} substrates and reduces the hysteresis at room temperature.« less

Enhanced doping effect on tuning structural phases of monolayer antimony

NASA Astrophysics Data System (ADS)

Wang, Jizhang; Yang, Teng; Zhang, Zhidong; Yang, Li

2018-05-01

Doping is capable to control the atomistic structure, electronic structure, and even to dynamically realize a semiconductor-metal transition in two-dimensional (2D) transition metal dichalcogenides (TMDs). However, the high critical doping density (˜1014 electron/cm2), compound nature, and relatively low carrier mobility of TMDs limits broader applications. Using first-principles calculations, we predict that, via a small transition potential, a substantially lower hole doping density (˜6 × 1012 hole/cm2) can switch the ground-state structure of monolayer antimony from the hexagonal β-phase, a 2D semiconductor with excellent transport performance and air stability but an indirect bandgap, to the orthorhombic α phase with a direct bandgap and potentially better carrier mobility. We further show that this structural engineering can be achieved by the established electrostatic doping, surface functional adsorption, or directly using graphene substrate. This gives hope to dynamically tuning and large-scale production of 2D single-element semiconductors that simultaneously exhibit remarkable transport and optical performance.

Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors

NASA Astrophysics Data System (ADS)

Zhan, Xiang-Mi; Hao, Mei-Lan; Wang, Quan; Li, Wei; Xiao, Hong-Ling; Feng, Chun; Jiang, Li-Juan; Wang, Cui-Mei; Wang, Xiao-Liang; Wang, Zhan-Guo

2017-03-01

Gallium nitride- (GaN) based high electron mobility transistors (HEMTs) provide a good platform for biological detection. In this work, both Au-gated AlInN/GaN HEMT and AlGaN/GaN HEMT biosensors are fabricated for the detection of deoxyribonucleic acid (DNA) hybridization. The Au-gated AlInN/GaN HEMT biosensor exhibits higher sensitivity in comparison with the AlGaN/GaN HEMT biosensor. For the former, the drain-source current ( {V}{DS}=0.5 V) shows a clear decrease of 69 μA upon the introduction of 1 μmolL {}-1 (μM) complimentary DNA to the probe DNA at the sensor area, while for the latter it is only 38 μA. This current reduction is a notable indication of the hybridization. The high sensitivity can be attributed to the thinner barrier of the AlInN/GaN heterostructure, which makes the two-dimensional electron gas channel more susceptible to a slight change of the surface charge. Supported by the National Key Research and Development Program of China under Grant Nos 2016YFB0400104 and 2016YFB0400301, the National Natural Sciences Foundation of China under Grant No 61334002, and the National Science and Technology Major Project.

The first principle calculation of two-dimensional Dirac materials

NASA Astrophysics Data System (ADS)

Lu, Jin

2017-12-01

As the size of integrated device becoming increasingly small, from the last century, semiconductor industry is facing the enormous challenge to break the Moore’s law. The development of calculation, communication and automatic control have emergent expectation of new materials at the aspect of semiconductor industrial technology and science. In spite of silicon device, searching the alternative material with outstanding electronic properties has always been a research point. As the discovery of graphene, the research of two-dimensional Dirac material starts to express new vitality. This essay studied the development calculation of 2D material’s mobility and introduce some detailed information of some approximation method of the first principle calculation.

Reliable Exfoliation of Large-Area High-Quality Flakes of Graphene and Other Two-Dimensional Materials.

PubMed

Huang, Yuan; Sutter, Eli; Shi, Norman N; Zheng, Jiabao; Yang, Tianzhong; Englund, Dirk; Gao, Hong-Jun; Sutter, Peter

2015-11-24

Mechanical exfoliation has been a key enabler of the exploration of the properties of two-dimensional materials, such as graphene, by providing routine access to high-quality material. The original exfoliation method, which remained largely unchanged during the past decade, provides relatively small flakes with moderate yield. Here, we report a modified approach for exfoliating thin monolayer and few-layer flakes from layered crystals. Our method introduces two process steps that enhance and homogenize the adhesion force between the outermost sheet in contact with a substrate: Prior to exfoliation, ambient adsorbates are effectively removed from the substrate by oxygen plasma cleaning, and an additional heat treatment maximizes the uniform contact area at the interface between the source crystal and the substrate. For graphene exfoliation, these simple process steps increased the yield and the area of the transferred flakes by more than 50 times compared to the established exfoliation methods. Raman and AFM characterization shows that the graphene flakes are of similar high quality as those obtained in previous reports. Graphene field-effect devices were fabricated and measured with back-gating and solution top-gating, yielding mobilities of ∼4000 and 12,000 cm(2)/(V s), respectively, and thus demonstrating excellent electrical properties. Experiments with other layered crystals, e.g., a bismuth strontium calcium copper oxide (BSCCO) superconductor, show enhancements in exfoliation yield and flake area similar to those for graphene, suggesting that our modified exfoliation method provides an effective way for producing large area, high-quality flakes of a wide range of 2D materials.

Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector

PubMed Central

Jung, Chulseung; Kim, Seung Min; Moon, Hyunseong; Han, Gyuchull; Kwon, Junyeon; Hong, Young Ki; Omkaram, Inturu; Yoon, Youngki; Kim, Sunkook; Park, Jozeph

2015-01-01

Hexagonal molybdenum diselenide (MoSe2) multilayers were grown by chemical vapor deposition (CVD). A relatively high pressure (>760 Torr) was used during the CVD growth to achieve multilayers by creating multiple nuclei based on the two-dimensional crystal growth model. Our CVD-grown multilayer MoSe2 thin-film transistors (TFTs) show p-type-dominant ambipolar behaviors, which are attributed to the formation of Se vacancies generated at the decomposition temperature (650 °C) after the CVD growth for 10 min. Our MoSe2 TFT with a reasonably high field-effect mobility (10 cm2/V · s) exhibits a high photoresponsivity (93.7 A/W) and a fast photoresponse time (τrise ~ 0.4 s) under the illumination of light, which demonstrates the practical feasibility of multilayer MoSe2 TFTs for photodetector applications. PMID:26477744

Bottom-up assembly of metallic germanium

NASA Astrophysics Data System (ADS)

Scappucci, Giordano; Klesse, Wolfgang M.; Yeoh, Lareine A.; Carter, Damien J.; Warschkow, Oliver; Marks, Nigel A.; Jaeger, David L.; Capellini, Giovanni; Simmons, Michelle Y.; Hamilton, Alexander R.

2015-08-01

Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material, a light emitting medium in silicon-integrated lasers, and a plasmonic conductor for bio-sensing. Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (1019 to 1020 cm-3) low-resistivity (10-4Ω · cm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based doping technologies. We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory.

Fluorene-Based Two-Dimensional Covalent Organic Framework with Thermoelectric Properties through Doping.

PubMed

Wang, Liangying; Dong, Bin; Ge, Rile; Jiang, Fengxing; Xu, Jingkun

2017-03-01

Organic semiconductors have great potential as flexible thermoelectric materials. A fluorene-based covalent organic framework (FL-COF-1) was designed with the aim of creating an enhanced π-π interaction among the crystalline backbones. By the introduction of fluorene units into the frameworks, the FL-COF-1 had high thermal stability with a BET surface area over 1300 m 2 g -1 . The open frameworks were favorable for doping with iodine and followed with the improved charge carrier mobility. The compressed pellet of I 2 @FL-COF-1 exhibited a high Seebeck coefficient of 2450 μV K -1 and power factor of 0.063 μW m -1 K -2 at room temperature, giving the first example of COFs' potential application as thermoelectric materials.

Practical application of in silico fragmentation based residue screening with ion mobility high-resolution mass spectrometry.

PubMed

Kaufmann, Anton; Butcher, Patrick; Maden, Kathry; Walker, Stephan; Widmer, Mirjam

2017-07-15

A screening concept for residues in complex matrices based on liquid chromatography coupled to ion mobility high-resolution mass spectrometry LC/IMS-HRMS is presented. The comprehensive four-dimensional data (chromatographic retention time, drift time, mass-to-charge and ion abundance) obtained in data-independent acquisition (DIA) mode was used for data mining. An in silico fragmenter utilizing a molecular structure database was used for suspect screening, instead of targeted screening with reference substances. The utilized data-independent acquisition mode relies on the MS E concept; where two constantly alternating HRMS scans (low and high fragmentation energy) are acquired. Peak deconvolution and drift time alignment of ions from the low (precursor ion) and high (product ion) energy scan result in relatively clean product ion spectra. A bond dissociation in silico fragmenter (MassFragment) supplied with mol files of compounds of interest was used to explain the observed product ions of each extracted candidate component (chromatographic peak). Two complex matrices (fish and bovine liver extract) were fortified with 98 veterinary drugs. Out of 98 screened compounds 94 could be detected with the in silico based screening approach. The high correlation among drift time and m/z value of equally charged ions was utilized for an orthogonal filtration (ranking). Such an orthogonal ion mobility based filter removes multiply charged ions (e.g. peptides and proteins from the matrix) as well as noise and artefacts. Most significantly, this filtration dramatically reduces false positive findings but hardly increases false negative findings. The proposed screening approach may offer new possibilities for applications where reference compounds are hardly or not at all commercially available. Such areas may be the analysis of metabolites of drugs, pyrrolizidine alkaloids, marine toxins, derivatives of sildenafil or novel designer drugs (new psychoactive substances). Copyright © 2017 John Wiley & Sons, Ltd. Copyright © 2017 John Wiley & Sons, Ltd.

An Eulerian two-phase model for steady sheet flow using large-eddy simulation methodology

NASA Astrophysics Data System (ADS)

Cheng, Zhen; Hsu, Tian-Jian; Chauchat, Julien

2018-01-01

A three-dimensional Eulerian two-phase flow model for sediment transport in sheet flow conditions is presented. To resolve turbulence and turbulence-sediment interactions, the large-eddy simulation approach is adopted. Specifically, a dynamic Smagorinsky closure is used for the subgrid fluid and sediment stresses, while the subgrid contribution to the drag force is included using a drift velocity model with a similar dynamic procedure. The contribution of sediment stresses due to intergranular interactions is modeled by the kinetic theory of granular flow at low to intermediate sediment concentration, while at high sediment concentration of enduring contact, a phenomenological closure for particle pressure and frictional viscosity is used. The model is validated with a comprehensive high-resolution dataset of unidirectional steady sheet flow (Revil-Baudard et al., 2015, Journal of Fluid Mechanics, 767, 1-30). At a particle Stokes number of about 10, simulation results indicate a reduced von Kármán coefficient of κ ≈ 0.215 obtained from the fluid velocity profile. A fluid turbulence kinetic energy budget analysis further indicates that the drag-induced turbulence dissipation rate is significant in the sheet flow layer, while in the dilute transport layer, the pressure work plays a similar role as the buoyancy dissipation, which is typically used in the single-phase stratified flow formulation. The present model also reproduces the sheet layer thickness and mobile bed roughness similar to measured data. However, the resulting mobile bed roughness is more than two times larger than that predicted by the empirical formulae. Further analysis suggests that through intermittent turbulent motions near the bed, the resolved sediment Reynolds stress plays a major role in the enhancement of mobile bed roughness. Our analysis on near-bed intermittency also suggests that the turbulent ejection motions are highly correlated with the upward sediment suspension flux, while the turbulent sweep events are mostly associated with the downward sediment deposition flux.

[Simultaneous determination of vitamins A, D3 and E in infant formula and adult nutritions by online two-dimensional liquid chromatography].

PubMed

Zhang, Yanhai; Qibule, Hasi; Jin, Yan; Wang, Jia; Ma, Wenli

2015-03-01

A rapid method for the simultaneous determination of vitamins A, D3 and E in infant formula and adult nutritions has been developed using online two-dimensional liquid chromatography (2D-LC). First of all, C8 and polar embedded C18 columns were chosen as the first and second dimensional column respectively according to hydrophobic-subtraction model, which constituted excellent orthogonal separation system. The detection wavelengths were set at 263 nm for vitamin D3, 296 nm for vitamin E and 325 nm for vitamin A. The purification of vitamin D3 and quantifications of vitamins A and E were completed simultaneously in the first dimensional separation using the left pump of Dual Gradient LC (DGLC) with methanol, acetonitrile and water as mobile phases. The heart-cutting time window of vitamin D3 was confirmed according to the retention time of vitamin D3 in the first dimensional separation. The elute from the first dimensional column (1-D column) which contained vitamin D3 was collected by a 500 µL sample loop and then taken into the second dimensional column (2-D column) by the right pump of DGLC with methanol, acetonitrile and water as mobile phases. The quantification of vitamin D3 was performed in the second dimensional separation with vitamin D2 as internal standard. At last, this method was applied for the analysis of the three vitamins in milk powder, cheese and yogurt. The injected sample solution with no further purification was pre-treated by hot-saponification using 1. 25 kg/L KOH solution and extracted by petroleum ether solvent. The recoveries of vitamin D3 spiked in all samples were 75.50%-85.00%. There was no statistically significant difference for the results between this method and standard method through t-test. The results indicate that vitamins A, D3 and E in infant formula and adult fortified dairy can be determined rapidly and accurately with this method.

Highly Mobile Students: Educational Problems and Possible Solutions. ERIC/CUE Digest, Number 73.

ERIC Educational Resources Information Center

ERIC Clearinghouse on Urban Education, New York, NY.

The following two types of student mobility stand out as causing educational problems: (1) inner-city mobility, which is prompted largely by fluctuations in the job market; and (2) intra-city mobility, which is caused by upward mobility or by poverty and homelessness. Most research indicates that high mobility negatively affects student…

An introduction to QR Codes: linking libraries and mobile patrons.

PubMed

Hoy, Matthew B

2011-01-01

QR codes, or "Quick Response" codes, are two-dimensional barcodes that can be scanned by mobile smartphone cameras. These codes can be used to provide fast access to URLs, telephone numbers, and short passages of text. With the rapid adoption of smartphones, librarians are able to use QR codes to promote services and help library users find materials quickly and independently. This article will explain what QR codes are, discuss how they can be used in the library, and describe issues surrounding their use. A list of resources for generating and scanning QR codes is also provided.

Preliminary Characterization of Genipin-Cross-Linked Silk Sericin/Poly(vinyl alcohol) Films as Two-Dimensional Wound Dressings for the Healing of Superficial Wounds

PubMed Central

Siritientong, Tippawan; Ratanavaraporn, Juthamas; Srichana, Teerapol; Aramwit, Pornanong

2013-01-01

The genipin-cross-linked silk sericin/poly(vinyl alcohol) (PVA) films were developed aiming to be applied as two-dimensional wound dressings for the treatment of superficial wounds. The effects of genipin cross-linking concentration on the physical and biological properties of the films were investigated. The genipin-cross-linked silk sericin/PVA films showed the increased surface density, tensile strength, and percentage of elongation, but decreased percentage of light transmission, water vapor transmission rate, and water swelling, compared to the non-cross-linked films. This explained that the cross-linking bonds between genipin and silk sericin would reduce the mobility of molecular chains within the films, resulting in the more rigid molecular structure. Silk sericin was released from the genipin-cross-linked films in a sustained manner. In addition, either L929 mouse fibroblast or HaCat keratinocyte cells showed high percentage of viability when cultured on the silk sericin/PVA films cross-linked with 0.075 and 0.1% w/v genipin. The in vivo safety test performed according to ISO 10993-6 confirmed that the genipin-cross-linked silk sericin/PVA films were safe for the medical usages. The efficacy of the films for the treatment of superficial skin wounds will be further investigated in vivo and clinically. The genipin-cross-linked silk sericin/PVA films would be promising choices of two-dimensional wound dressings for the treatment of superficial wounds. PMID:24106722

Preliminary characterization of genipin-cross-linked silk sericin/poly(vinyl alcohol) films as two-dimensional wound dressings for the healing of superficial wounds.

PubMed

Siritientong, Tippawan; Ratanavaraporn, Juthamas; Srichana, Teerapol; Aramwit, Pornanong

2013-01-01

The genipin-cross-linked silk sericin/poly(vinyl alcohol) (PVA) films were developed aiming to be applied as two-dimensional wound dressings for the treatment of superficial wounds. The effects of genipin cross-linking concentration on the physical and biological properties of the films were investigated. The genipin-cross-linked silk sericin/PVA films showed the increased surface density, tensile strength, and percentage of elongation, but decreased percentage of light transmission, water vapor transmission rate, and water swelling, compared to the non-cross-linked films. This explained that the cross-linking bonds between genipin and silk sericin would reduce the mobility of molecular chains within the films, resulting in the more rigid molecular structure. Silk sericin was released from the genipin-cross-linked films in a sustained manner. In addition, either L929 mouse fibroblast or HaCat keratinocyte cells showed high percentage of viability when cultured on the silk sericin/PVA films cross-linked with 0.075 and 0.1% w/v genipin. The in vivo safety test performed according to ISO 10993-6 confirmed that the genipin-cross-linked silk sericin/PVA films were safe for the medical usages. The efficacy of the films for the treatment of superficial skin wounds will be further investigated in vivo and clinically. The genipin-cross-linked silk sericin/PVA films would be promising choices of two-dimensional wound dressings for the treatment of superficial wounds.

Polarization engineered enhancement mode GaN HEMT: Design and investigation

NASA Astrophysics Data System (ADS)

Verma, Sumit; Loan, Sajad A.; Alharbi, Abdullah G.

2018-07-01

In this paper, we propose and perform the experimentally calibrated simulation of a novel structure of a GaN/AlGaN high electron mobility transistor (HEMT). The novelty of the structure is the realization of enhancement mode operation by employing polarization engineering approach. In the proposed polarization engineered HEMT (PE-HEMT) a buried Aluminum Nitride (AlN) box is employed in the GaN layer just below the gate. The AlN box creates a two-dimensional hole gas (2DHG) at the GaN/AlN interface, which creates a conduction band barrier in the path of the already existing two-dimensional electron gas (2DEG) at GaN/AlGaN. Therefore, there is no direct path between the source and drain regions at zero gate voltage due to the barrier created by AIN and the device is initially OFF, an enhancement mode operation. A two dimensional (2D) calibrated simulation study of proposed PE-HEMT shows that the device has a threshold voltage (Vth) of 2.3 V. The PE-HEMT also reduces the electron spillover and thus improves the breakdown voltage by 108% as compared to conventional HEMT. The thermal analysis of the GaN PE-HEMT shows that a hot zone occurs on the drain side gate edge. It has been observed that the drain current in the PE-HEMT structure can be improved by 157% by using AlN heat sink.

Angular phase shift in polarization-angle dependence of microwave-induced magnetoresistance oscillations

NASA Astrophysics Data System (ADS)

Liu, Han-Chun; Samaraweera, Rasanga L.; Mani, R. G.; Reichl, C.; Wegscheider, W.

2016-12-01

We examine the microwave frequency (f ) variation of the angular phase shift, θ0, observed in the polarization-angle dependence of microwave-induced magnetoresistance oscillations in a high-mobility GaAs/AlGaAs two-dimensional electron system. By fitting the diagonal resistance Rx x versus θ plots to an empirical cosine square law, we extract θ0 and trace its quasicontinuous variation with f . The results suggest that the overall average of θ0 extracted from Hall bar device sections with length-to-width ratios of L /W =1 and 2 is the same. We compare the observations with expectations arising from the "ponderomotive force" theory for microwave radiation-induced transport phenomena.

Nanophotonic projection system.

PubMed

Aflatouni, Firooz; Abiri, Behrooz; Rekhi, Angad; Hajimiri, Ali

2015-08-10

Low-power integrated projection technology can play a key role in development of low-cost mobile devices with built-in high-resolution projectors. Low-cost 3D imaging and holography systems are also among applications of such a technology. In this paper, an integrated projection system based on a two-dimensional optical phased array with fast beam steering capability is reported. Forward biased p-i-n phase modulators with 200MHz bandwidth are used per each array element for rapid phase control. An optimization algorithm is implemented to compensate for the phase dependent attenuation of the p-i-n modulators. Using rapid vector scanning technique, images were formed and recorded within a single snapshot of the IR camera.

Development of biosensors based on the one-dimensional semiconductor nanomaterials.

PubMed

Yan, Shancheng; Shi, Yi; Xiao, Zhongdang; Zhou, Minmin; Yan, Wenfu; Shen, Haoliang; Hu, Dong

2012-09-01

Biosensors are becoming increasingly important due to their applications in biological and chemical analyses, food safety industry, biomedical diagnostics, clinical detection, and environmental monitoring. Recent years, nanostructured semiconductor materials have been used to fabricate biosensors owing to their biocompatibility, low toxicity, high electron mobility, and easy fabrication. In the present study, we focus on recent various biosensors based on the one-dimensional semiconductor nanomaterials such as electrochemical biosensor, field-effect transistors biosensor, and label-free optical biosensor. In particular, the development of the electrochemical biosensor is discussed detailedly.

Tunable transmission of quantum Hall edge channels with full degeneracy lifting in split-gated graphene devices.

PubMed

Zimmermann, Katrin; Jordan, Anna; Gay, Frédéric; Watanabe, Kenji; Taniguchi, Takashi; Han, Zheng; Bouchiat, Vincent; Sellier, Hermann; Sacépé, Benjamin

2017-04-13

Charge carriers in the quantum Hall regime propagate via one-dimensional conducting channels that form along the edges of a two-dimensional electron gas. Controlling their transmission through a gate-tunable constriction, also called quantum point contact, is fundamental for many coherent transport experiments. However, in graphene, tailoring a constriction with electrostatic gates remains challenging due to the formation of p-n junctions below gate electrodes along which electron and hole edge channels co-propagate and mix, short circuiting the constriction. Here we show that this electron-hole mixing is drastically reduced in high-mobility graphene van der Waals heterostructures thanks to the full degeneracy lifting of the Landau levels, enabling quantum point contact operation with full channel pinch-off. We demonstrate gate-tunable selective transmission of integer and fractional quantum Hall edge channels through the quantum point contact. This gate control of edge channels opens the door to quantum Hall interferometry and electron quantum optics experiments in the integer and fractional quantum Hall regimes of graphene.

Walk-Rally Support System Using Two-Dimensional Codes and Mobile Phones

ERIC Educational Resources Information Center

Miyagawa, Tetsuya; Yamagishi, Yoshio; Mizuno, Shun

2013-01-01

"Walk Rally" (WR), an orienteering-like recreation game, is common, especially in Japan. Numerous trials to combine WR with educational activities are being carried out by some educators. However, participants are always at the risk of straying and subjected to various accidents during the WR. We developed a WR support system based on…

Achieving Ultrahigh Carrier Mobility in Two-Dimensional Hole Gas of Black Phosphorus.

PubMed

Long, Gen; Maryenko, Denis; Shen, Junying; Xu, Shuigang; Hou, Jianqiang; Wu, Zefei; Wong, Wing Ki; Han, Tianyi; Lin, Jiangxiazi; Cai, Yuan; Lortz, Rolf; Wang, Ning

2016-12-14

We demonstrate that a field-effect transistor (FET) made of few-layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum exhibits a room-temperature hole mobility of 5200 cm 2 /(Vs), being limited just by the phonon scattering. At cryogenic temperatures, the FET mobility increases up to 45 000 cm 2 /(Vs), which is five times higher compared to the mobility obtained in earlier reports. The unprecedentedly clean h-BN-BP-h-BN heterostructure exhibits Shubnikov-de Haas oscillations and a quantum Hall effect with Landau level (LL) filling factors down to v = 2 in conventional laboratory magnetic fields. Moreover, carrier density independent effective mass of m * = 0.26 m 0 is measured, and a Landé g-factor of g = 2.47 is reported. Furthermore, an indication for a distinct hole transport behavior with up- and down-spin orientations is found.

Theoretical predictions on the electronic structure and charge carrier mobility in 2D Phosphorus sheets

PubMed Central

Xiao, Jin; Long, Mengqiu; Zhang, Xiaojiao; Ouyang, Jun; Xu, Hui; Gao, Yongli

2015-01-01

We have investigated the electronic structure and carrier mobility of four types of phosphorous monolayer sheet (α-P, β-P,γ-P and δ-P) using density functional theory combined with Boltzmann transport method and relaxation time approximation. It is shown that α-P, β-P and γ-P are indirect gap semiconductors, while δ-P is a direct one. All four sheets have ultrahigh carrier mobility and show anisotropy in-plane. The highest mobility value is ~3 × 105 cm2V−1s−1, which is comparable to that of graphene. Because of the huge difference between the hole and electron mobilities, α-P, γ-P and δ-P sheets can be considered as n-type semiconductors, and β-P sheet can be considered as a p-type semiconductor. Our results suggest that phosphorous monolayer sheets can be considered as a new type of two dimensional materials for applications in optoelectronics and nanoelectronic devices. PMID:26035176

Stochastic quasi-Newton molecular simulations

NASA Astrophysics Data System (ADS)

Chau, C. D.; Sevink, G. J. A.; Fraaije, J. G. E. M.

2010-08-01

We report a new and efficient factorized algorithm for the determination of the adaptive compound mobility matrix B in a stochastic quasi-Newton method (S-QN) that does not require additional potential evaluations. For one-dimensional and two-dimensional test systems, we previously showed that S-QN gives rise to efficient configurational space sampling with good thermodynamic consistency [C. D. Chau, G. J. A. Sevink, and J. G. E. M. Fraaije, J. Chem. Phys. 128, 244110 (2008)10.1063/1.2943313]. Potential applications of S-QN are quite ambitious, and include structure optimization, analysis of correlations and automated extraction of cooperative modes. However, the potential can only be fully exploited if the computational and memory requirements of the original algorithm are significantly reduced. In this paper, we consider a factorized mobility matrix B=JJT and focus on the nontrivial fundamentals of an efficient algorithm for updating the noise multiplier J . The new algorithm requires O(n2) multiplications per time step instead of the O(n3) multiplications in the original scheme due to Choleski decomposition. In a recursive form, the update scheme circumvents matrix storage and enables limited-memory implementation, in the spirit of the well-known limited-memory Broyden-Fletcher-Goldfarb-Shanno (L-BFGS) method, allowing for a further reduction of the computational effort to O(n) . We analyze in detail the performance of the factorized (FSU) and limited-memory (L-FSU) algorithms in terms of convergence and (multiscale) sampling, for an elementary but relevant system that involves multiple time and length scales. Finally, we use this analysis to formulate conditions for the simulation of the complex high-dimensional potential energy landscapes of interest.

High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.; Mueller, Carl H.; Croke, Edward T.; Ponchak, George E.

2003-01-01

SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony, concentration was approximately 4 x 10(exp19) per cubic cm. The electron mobility was over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively. At these two temperatures, the electron carrier densities were 1.6 and 1.33 x 10(exp 12) per sq cm, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (V(sub DS)) range, with (V(sub DS)) knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.

A New One-dimensional Quantum Material - Ta2Pd3Se8 Atomic Chain

NASA Astrophysics Data System (ADS)

Liu, Xue; Liu, Jinyu; Hu, Jin; Yue, Chunlei; Mao, Zhiqiang; Wei, Jiang; Antipina, Liubov; Sorokin, Pavel; Sanchez, Ana

Since the discovery of carbon nanotube, there has been a persistent effort to search for other one dimensional (1D) quantum systems. However, only a few examples have been found. We report a new 1D example - semiconducting Ta2Pd3Se8. We demonstrate that the Ta2Pd3Se8 nanowire as thin as 1.3nm can be easily obtained by applying simple mechanical exfoliation from its bulk counterpart. High resolution TEM shows an intrinsic 1D chain-like crystalline morphology on these nano wires, indicating weak bonding between these atomic chains. Theoretical calculation shows a direct bandgap structure, which evolves from 0.53eV in the bulk to 1.04eV in single atomic chain. The field effect transistor based on Ta2Pd3Se8 nanowire achieved a promising performance with 104On/Off ratio and 80 cm2V-1s-1 mobility. Low temperature transport study reflects two different mechanisms, variable range hopping and thermal activation, which dominate the transport properties at different temperature regimes. Ta2Pd3Se8 nanowire provides an intrinsic 1D material system for the study low dimensional condensed matter physics.

Spreading of infection in a two species reaction-diffusion process in networks

NASA Astrophysics Data System (ADS)

Korosoglou, Paschalis; Kittas, Aristotelis; Argyrakis, Panos

2010-12-01

We study the dynamics of the infection of a two mobile species reaction from a single infected agent in a population of healthy agents. Historically, the main focus for infection propagation has been through spreading phenomena, where a random location of the system is initially infected and then propagates by successfully infecting its neighbor sites. Here both the infected and healthy agents are mobile, performing classical random walks. This may be a more realistic picture to such epidemiological models, such as the spread of a virus in communication networks of routers, where data travel in packets, the communication time of stations in ad hoc mobile networks, information spreading (such as rumor spreading) in social networks, etc. We monitor the density of healthy particles ρ(t) , which we find in all cases to be an exponential function in the long-time limit in two-dimensional and three-dimensional lattices and Erdős-Rényi (ER) and scale-free (SF) networks. We also investigate the scaling of the crossover time tc from short- to long-time exponential behavior, which we find to be a power law in lattices and ER networks. This crossover is shown to be absent in SF networks, where we reveal the role of the connectivity of the network in the infection process. We compare this behavior to ER networks and lattices and highlight the significance of various connectivity patterns, as well as the important differences of this process in the various underlying geometries, revealing a more complex behavior of ρ(t) .

Self-consistent field theory of tethered polymers: one dimensional, three dimensional, strong stretching theories and the effects of excluded-volume-only interactions.

PubMed

Suo, Tongchuan; Whitmore, Mark D

2014-11-28

We examine end-tethered polymers in good solvents, using one- and three-dimensional self-consistent field theory, and strong stretching theories. We also discuss different tethering scenarios, namely, mobile tethers, fixed but random ones, and fixed but ordered ones, and the effects and important limitations of including only binary interactions (excluded volume terms). We find that there is a "mushroom" regime in which the layer thickness is independent of the tethering density, σ, for systems with ordered tethers, but we argue that there is no such plateau for mobile or disordered anchors, nor is there one in the 1D theory. In the other limit of brushes, all approaches predict that the layer thickness scales linearly with N. However, the σ(1/3) scaling is a result of keeping only excluded volume interactions: when the full potential is included, the dependence is faster and more complicated than σ(1/3). In fact, there does not appear to be any regime in which the layer thickness scales in the combination Nσ(1/3). We also compare the results for two different solvents with each other, and with earlier Θ solvent results.

Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate

NASA Astrophysics Data System (ADS)

Zhang, Zhili; Song, Liang; Li, Weiyi; Fu, Kai; Yu, Guohao; Zhang, Xiaodong; Fan, Yaming; Deng, Xuguang; Li, Shuiming; Sun, Shichuang; Li, Xiajun; Yuan, Jie; Sun, Qian; Dong, Zhihua; Cai, Yong; Zhang, Baoshun

2017-08-01

In this paper, we systematically investigated the leakage mechanism of the ion-implantation isolated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrate. By means of combined DC tests at different temperatures and electric field dependence, we demonstrated the following original results: (1) It is proved that gate leakage is the main contribution to OFF-state leakage of ion-implantation isolated AlGaN/GaN MIS-HEMTs, and the gate leakage path is a series connection of the gate dielectric Si3N4 and Si3N4-GaN interface. (2) The dominant mechanisms of the leakage current through LPCVD-Si3N4 gate dielectric and Si3N4-GaN interface are identified to be Frenkel-Poole emission and two-dimensional variable range hopping (2D-VRH), respectively. (3) A certain temperature annealing could reduce the density of the interface state that produced by ion implantation, and consequently suppress the interface leakage transport, which results in a decrease in OFF-state leakage current of ion-implantation isolated AlGaN/GaN MIS-HEMTs.

Using gapped topological surface states of Bi 2Se 3 films in a field effect transistor

DOE PAGES

Sun, Jifeng; Singh, David J.

2017-02-08

Three dimensional topological insulators are insulators with topologically protected surface states that can have a high band velocity and high mobility at room temperature. This then suggests electronic applications that exploit these surface states, but the lack of a band gap poses a fundamental difficulty. We report a first principles study based on density functional theory for thin Bi 2Se 3 films in the context of a field effect transistor. It is known that a gap is induced in thin layers due to hybridization between the top and bottom surfaces, but it is not known whether it is possible tomore » use the topological states in this type of configuration. In particular, it is unclear whether the benefits of topological protection can be retained to a sufficient degree. We also show that there is a thickness regime in which the small gap induced by hybridization between the two surfaces is sufficient to obtain transistor operation at room temperature, and furthermore, that the band velocity and spin texture that are important for the mobility are preserved for Fermi levels of relevance to device application.« less

Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer

NASA Astrophysics Data System (ADS)

Han, Tiecheng; Zhao, Hongdong; Peng, Xiaocan; Li, Yuhai

2018-04-01

A graded AlGaN buffer is designed to realize the p-type buffer by inducing polarization-doping holes. Based on the two-dimensional device simulator, the effect of the graded AlGaN buffer on the direct-current (DC) and radio-frequency (RF) performance of short-gate InAlN/GaN high-electron mobility transistors (HEMTs) are investigated, theoretically. Compared to standard HEMT, an enhancement of electron confinement and a good control of short-channel effect (SCEs) are demonstrated in the graded AlGaN buffer HEMT. Accordingly, the pinched-off behavior and the ability of gate modulation are significantly improved. And, no serious SCEs are observed in the graded AlGaN buffer HEMT with an aspect ratio (LG/tch) of about 6.7, much lower than that of the standard HEMT (LG/tch = 13). In addition, for a 70-nm gate length, a peak current gain cutoff frequency (fT) of 171 GHz and power gain cutoff frequency (fmax) of 191 GHz are obtained in the grade buffer HEMT, which are higher than those of the standard one with the same gate length.

Tunneling and Origin of Large Access Resistance in Layered-Crystal Organic Transistors

NASA Astrophysics Data System (ADS)

Hamai, Takamasa; Arai, Shunto; Minemawari, Hiromi; Inoue, Satoru; Kumai, Reiji; Hasegawa, Tatsuo

2017-11-01

Layered crystallinity of organic semiconductors is crucial to obtaining high-performance organic thin-film transistors (OTFTs), as it allows both smooth-channel-gate-insulator interface formation and efficient two-dimensional carrier transport along the interface. However, the role of vertical transport across the crystalline molecular layers in device operations has not been a crucial subject so far. Here, we show that the interlayer carrier transport causes unusual nonlinear current-voltage characteristics and enormous access resistance in extremely high-quality single-crystal OTFTs based on 2-decyl-7-phenyl[1]-benzothieno[3 ,2 -b ][1]benzothiophene (Ph -BTBT -C10 ) that involve inherent multiple semiconducting π -conjugated layers interposed, respectively, by electrically inert alkyl-chain layers. The output characteristics present layer-number (n )-dependent nonlinearity that becomes more evident at larger n (1 ≤n ≤15 ), demonstrating tunneling across multiple alkyl-chain layers. The n -dependent device mobility and four-probe measurements reveal that the alkyl-chain layers generate a large access resistance that suppresses the device mobility from the intrinsic value of about 20 cm2 V-1 s-1 . Our findings clarify the reason why device characteristics are distributed in single-crystal OTFTs.

High-Resolution Faraday Rotation and Electron-Phonon Coupling in Surface States of the Bulk-Insulating Topological Insulator Cu_{0.02}Bi_{2}Se_{3}.

PubMed

Wu, Liang; Tse, Wang-Kong; Brahlek, M; Morris, C M; Aguilar, R Valdés; Koirala, N; Oh, S; Armitage, N P

2015-11-20

We have utilized time-domain magnetoterahertz spectroscopy to investigate the low-frequency optical response of the topological insulator Cu_{0.02}Bi_{2}Se_{3} and Bi_{2}Se_{3} films. With both field and frequency dependence, such experiments give sufficient information to measure the mobility and carrier density of multiple conduction channels simultaneously. We observe sharp cyclotron resonances (CRs) in both materials. The small amount of Cu incorporated into the Cu_{0.02}Bi_{2}Se_{3} induces a true bulk insulator with only a single type of conduction with a total sheet carrier density of ~4.9×10^{12}/cm^{2} and mobility as high as 4000 cm^{2}/V·s. This is consistent with conduction from two virtually identical topological surface states (TSSs) on the top and bottom of the film with a chemical potential ~145 meV above the Dirac point and in the bulk gap. The CR broadens at high fields, an effect that we attribute to an electron-phonon interaction. This assignment is supported by an extended Drude model analysis of the zero-field Drude conductance. In contrast, in normal Bi_{2}Se_{3} films, two conduction channels were observed, and we developed a self-consistent analysis method to distinguish the dominant TSSs and coexisting trivial bulk or two-dimensional electron gas states. Our high-resolution Faraday rotation spectroscopy on Cu_{0.02}Bi_{2}Se_{3} paves the way for the observation of quantized Faraday rotation under experimentally achievable conditions to push the chemical potential in the lowest Landau level.

Review of GaN-based devices for terahertz operation

NASA Astrophysics Data System (ADS)

Ahi, Kiarash

2017-09-01

GaN provides the highest electron saturation velocity, breakdown voltage, operation temperature, and thus the highest combined frequency-power performance among commonly used semiconductors. The industrial need for compact, economical, high-resolution, and high-power terahertz (THz) imaging and spectroscopy systems are promoting the utilization of GaN for implementing the next generation of THz systems. As it is reviewed, the mentioned characteristics of GaN together with its capabilities of providing high two-dimensional election densities and large longitudinal optical phonon of ˜90 meV make it one of the most promising semiconductor materials for the future of the THz emitters, detectors, mixers, and frequency multiplicators. GaN-based devices have shown capabilities of operation in the upper THz frequency band of 5 to 12 THz with relatively high photon densities in room temperature. As a result, THz imaging and spectroscopy systems with high resolution and deep depth of penetration can be realized through utilizing GaN-based devices. A comprehensive review of the history and the state of the art of GaN-based electronic devices, including plasma heterostructure field-effect transistors, negative differential resistances, hetero-dimensional Schottky diodes, impact avalanche transit times, quantum-cascade lasers, high electron mobility transistors, Gunn diodes, and tera field-effect transistors together with their impact on the future of THz imaging and spectroscopy systems is provided.

Limiting scattering processes in high-mobility InSb quantum wells grown on GaSb buffer systems

NASA Astrophysics Data System (ADS)

Lehner, Ch. A.; Tschirky, T.; Ihn, T.; Dietsche, W.; Keller, J.; Fält, S.; Wegscheider, W.

2018-05-01

We present molecular beam epitaxial grown single- and double-side δ -doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers. We analyze the surface morphology as well as the impact of the crystalline quality on the electron transport. Comparing growth on GaSb and GaAs substrates indicates that the structural integrity of our InSb quantum wells is solely determined by the growth conditions at the GaSb/InAlSb transition and the InAlSb barrier growth. The two-dimensional electron gas samples show high mobilities of up to 349 000 cm2/Vs at cryogenic temperatures and 58 000 cm2/Vs at room temperature. With the calculated Dingle ratio and a transport lifetime model, ionized impurities predominantly remote from the quantum well are identified as the dominant source of scattering events. The analysis of the well-pronounced Shubnikov-de Haas oscillations reveals a high spin-orbit coupling with an effective g -factor of -38.4 in our samples. Along with the smooth surfaces and long mean free paths demonstrated, our InSb quantum wells are increasingly competitive for nanoscale implementations of Majorana mode devices.

Characterization of graded interface In(x)Ga(1-x)As/In(0.52)Al(0.48)As (x between 0.53 and 0.70) structures grown by molecular-beam epitaxy

NASA Technical Reports Server (NTRS)

Peng, C. K.; Sinha, S.; Morkoc, H.

1987-01-01

Modulation-doped In(x)Ga(1-x)As/In(0.52)Al(0.48)As/InP structures were grown by molecular-beam epitaxy with x values between 53 and 70 percent. For pseudomorphic cases, graded instead of abrupt interfaces were used. Hall mobility and persistent photoconductivity measurements as a function of temperature were used to characterize samples with different structural parameters. Consistent trends in the variation of mobilities and two-dimensional carrier concentration, n(2D), under light and dark conditions have been observed and discussed in terms of applicable scattering mechanisms. The Hall mobilities are comparable to the best results obtained to date but with significantly higher n(2D) concentration.

Magnetotransport of High Mobility Holes in Monolayer and Bilayer WSe2

NASA Astrophysics Data System (ADS)

Tutuc, Emanuel

Transition metal dichalcogenides have attracted significant interest because of their two-dimensional crystal structure, large band-gap, and strong spin-orbit interaction which leads to spin-valley locking. Recent advances in sample fabrication have allowed the experimental study of low temperature magneto-transport of high mobility holes in WSe2. We review here the main results of these studies which reveal clear quantum Hall states in mono- and bilayer WSe2. The data allows the extraction of an effective hole mass of m* = 0.45me (me is the bare electron mass) in both mono and bilayer WSe2. A systematic study of the carrier distribution in bilayer WSe2 determined from a Fourier analysis of the Shubnikov-de Haas oscillations indicates that the two layers are weakly coupled. The individual layer density dependence on gate bias shows negative compressibility, a signature of strong electron-electron interaction in these materials associated with the large effective mass. We discuss the interplay between cyclotron and Zeeman splitting using the dependence of the quantum Hall state sequence on carrier density, and the angle between the magnetic field and the WSe2 plane. Work done in collaboration with B. Fallahazad, H. C. P. Movva, K. Kim, S. K. Banerjee, T. Taniguchi, and K. Watanabe. This work supported by the Nanoelectronics Research Initiative SWAN center, Intel Corp., and National Science Foundation.

Spin injection devices with high mobility 2DEG channels (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ciorga, Mariusz; Oltscher, Martin; Kuczmik, Thomas; Loher, Josef; Bayer, Andreas; Schuh, Dieter; Bougeard, Dominique; Weiss, Dieter

2016-10-01

Effective electrical spin injection into two-dimensional electron gas (2DEG) is a prerequisite for many new functionalities in spintronic device concepts, with the Datta-Das spin field effect transistor [1] being a primary example. Here we will discuss some of the results of our studies on spin injection devices with high mobility 2DEG confined in an inverted AlGaAs/GaAs heterojunction and a diluted ferromagnetic semiconductor (Ga,Mn)As employed as a source and a detector of spin-polarized carriers. Firstly we will show that nonlocal spin valve signal in such devices can significantly exceed the prediction of the standard model of spin injection based on spin drift-diffusion equations [2], what leads to conclusion that ballistic transport in the 2D region directly below the injector should be taken into account to fully describe the spin injection process [3]. Furthermore, we demonstrate also a large magnetoresistance (MR) signal of 20% measured in local configuration, i.e., with spin-polarized current flowing between two ferromagnetic contacts. To our knowledge, this is the highest value of MR observed so far in semiconductor channels. The work has been supported by Deutsche Forschungsgemeinschaft (DFG) through SFB689. [1] S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990) [2] M. Oltscher et al., Phys. Rev. Lett. 113, 236602 (2014) [3] K. Cheng and S. Zhang, Phys. Rev. B 92, 214402 (2015)

Mobile impurities in ferromagnetic liquids

NASA Astrophysics Data System (ADS)

Kantian, Adrian; Schollwoeck, Ulrich; Giamarchi, Thierry

2011-03-01

Recent work has shown that mobile impurities in one dimensional interacting systems may exhibit behaviour that differs strongly from that predicted by standard Tomonaga-Luttinger liquid theory, with the appearance of power-law divergences in the spectral function signifying sublinear diffusion of the impurity. Using time-dependent matrix product states, we investigate a range of cases of mobile impurities in systems beyond the analytically accessible examples to assess the existence of a new universality class of low-energy physics in one-dimensional systems. Correspondence: Adrian.Kantian@unige.ch This work was supported in part by the Swiss SNF under MaNEP and division II.

Incoherent population mixing contributions to phase-modulation two-dimensional coherent excitation spectra

NASA Astrophysics Data System (ADS)

Grégoire, Pascal; Srimath Kandada, Ajay Ram; Vella, Eleonora; Tao, Chen; Leonelli, Richard; Silva, Carlos

2017-09-01

We present theoretical and experimental results showing the effects of incoherent population mixing on two-dimensional (2D) coherent excitation spectra that are measured via a time-integrated population and phase-sensitive detection. The technique uses four collinear ultrashort pulses and phase modulation to acquire two-dimensional spectra by isolating specific nonlinear contributions to the photoluminescence or photocurrent excitation signal. We demonstrate that an incoherent contribution to the measured line shape, arising from nonlinear population dynamics over the entire photoexcitation lifetime, generates a similar line shape to the expected 2D coherent spectra in condensed-phase systems. In those systems, photoexcitations are mobile such that inter-particle interactions are important on any time scale, including those long compared with the 2D coherent experiment. Measurements on a semicrystalline polymeric semiconductor film at low temperatures show that, in some conditions in which multi-exciton interactions are suppressed, the technique predominantly detects coherent signals and can be used, in our example, to extract homogeneous line widths. The same method used on a lead-halide perovskite photovoltaic cell shows that incoherent population mixing of mobile photocarriers can dominate the measured signal since carrier-carrier bimolecular scattering is active even at low excitation densities, which hides the coherent contribution to the spectral line shape. In this example, the intensity dependence of the signal matches the theoretical predictions over more than two orders of magnitude, confirming the incoherent nature of the signal. While these effects are typically not significant in dilute solution environments, we demonstrate the necessity to characterize, in condensed-phase materials systems, the extent of nonlinear population dynamics of photoexcitations (excitons, charge carriers, etc.) in the execution of this powerful population-detected coherent spectroscopy technique.

Two-dimensional wavelet analysis based classification of gas chromatogram differential mobility spectrometry signals.

PubMed

Zhao, Weixiang; Sankaran, Shankar; Ibáñez, Ana M; Dandekar, Abhaya M; Davis, Cristina E

2009-08-04

This study introduces two-dimensional (2-D) wavelet analysis to the classification of gas chromatogram differential mobility spectrometry (GC/DMS) data which are composed of retention time, compensation voltage, and corresponding intensities. One reported method to process such large data sets is to convert 2-D signals to 1-D signals by summing intensities either across retention time or compensation voltage, but it can lose important signal information in one data dimension. A 2-D wavelet analysis approach keeps the 2-D structure of original signals, while significantly reducing data size. We applied this feature extraction method to 2-D GC/DMS signals measured from control and disordered fruit and then employed two typical classification algorithms to testify the effects of the resultant features on chemical pattern recognition. Yielding a 93.3% accuracy of separating data from control and disordered fruit samples, 2-D wavelet analysis not only proves its feasibility to extract feature from original 2-D signals but also shows its superiority over the conventional feature extraction methods including converting 2-D to 1-D and selecting distinguishable pixels from training set. Furthermore, this process does not require coupling with specific pattern recognition methods, which may help ensure wide applications of this method to 2-D spectrometry data.

Color Filtering Localization for Three-Dimensional Underwater Acoustic Sensor Networks

PubMed Central

Liu, Zhihua; Gao, Han; Wang, Wuling; Chang, Shuai; Chen, Jiaxing

2015-01-01

Accurate localization of mobile nodes has been an important and fundamental problem in underwater acoustic sensor networks (UASNs). The detection information returned from a mobile node is meaningful only if its location is known. In this paper, we propose two localization algorithms based on color filtering technology called PCFL and ACFL. PCFL and ACFL aim at collaboratively accomplishing accurate localization of underwater mobile nodes with minimum energy expenditure. They both adopt the overlapping signal region of task anchors which can communicate with the mobile node directly as the current sampling area. PCFL employs the projected distances between each of the task projections and the mobile node, while ACFL adopts the direct distance between each of the task anchors and the mobile node. The proportion factor of distance is also proposed to weight the RGB values. By comparing the nearness degrees of the RGB sequences between the samples and the mobile node, samples can be filtered out. The normalized nearness degrees are considered as the weighted standards to calculate the coordinates of the mobile nodes. The simulation results show that the proposed methods have excellent localization performance and can localize the mobile node in a timely way. The average localization error of PCFL is decreased by about 30.4% compared to the AFLA method. PMID:25774706

Chemoselective Hydrodehalogenation of Organic Halides Utilizing Two-Dimensional Anionic Electrons of Inorganic Electride [Ca2N]+·e^.

PubMed

Kim, Ye Ji; Kim, Sun Min; Yu, Chunghyeon; Yoo, YoungMin; Cho, Eun Jin; Yang, Jung Woon; Kim, Sung Wng

2017-01-31

Halogenated organic compounds are important anthropogenic chemicals widely used in chemical industry, biology, and pharmacology; however, the persistence and inertness of organic halides cause human health problems and considerable environmental pollution. Thus, the elimination or replacement of halogen atoms with organic halides has been considered a central task in synthetic chemistry. In dehalogenation reactions, the consecutive single-electron transfer from reducing agents generates the radical and corresponding carbanion and thus removes the halogen atom as the leaving group. Herein, we report a new strategy for an efficient chemoselective hydrodehalogenation through the formation of stable carbanion intermediates, which are simply achieved by using highly mobile two-dimensional electrons of inorganic electride [Ca 2 N] + ·e - with effective electron transfer ability. The consecutive single-electron transfer from inorganic electride [Ca 2 N] + ·e - stabilized free carbanions, which is a key step in achieving the selective reaction. Furthermore, a determinant more important than leaving group ability is the stability control of free carbanions according to the s character determined by the backbone structure. We anticipate that this approach may provide new insight into selective chemical formation, including hydrodehalogenation.

Two-dimensional pH distributions and dynamics in bioturbated marine sediments

NASA Astrophysics Data System (ADS)

Zhu, Qingzhi; Aller, Robert C.; Fan, Yanzhen

2006-10-01

The seafloor is the site of intense biogeochemical and mineral dissolution-precipitation reactions which generate strong gradients in pH near the sediment-overlying water interface. These gradients are usually measured in one-dimension vertically with depth. Two-dimensional pH distributions in marine sediments were examined at high resolution (65 × 65 μm pixel) and analytical precision over areas of ˜150 to 225 cm 2 using a newly developed pH planar fluorosensor. Dramatic three-dimensional gradients, complex heterogeneity, and dynamic changes of pH occur in the surficial zone of deposits inhabited by macrofauna. pH can vary by ±2 units horizontally as well as vertically over millimeter scales. pH minima zones often form in association with redoxclines within a few millimeters of inner burrow walls, and become more pronounced with time if burrows remain stable and irrigated for extended periods. Microenvironmental pH minima also form locally around decaying biomass and relict burrow tracks, and dissipate with time (˜5 d). H + concentrations and fluxes in sandy mud show complex acid-base reaction distributions with net H + fluxes around burrows up to ˜12 nmol cm -2 d -1 and maximum net reaction rates varying between -90 (consumption) to 120 (production) μM d -1 (˜90 nmol cm -1 d -1 burrow length). Acid producing zones that surround irrigated burrows are largely balanced by acid titration zones along inner burrow walls and outer radial boundaries. The geometry and scaling of pH microenvironments are functions of diagenetic reaction rates and three-dimensional transport patterns determined by sediment properties, such as diffusive tortuosity, and by benthic community characteristics such as the abundance, mobility, and size of infauna. Previously, undocumented biogeochemical phenomena such as low pH regions associated with in-filled relict biogenic structures and burrowing tracks are readily demonstrated by two-dimensional and time-dependent images of pH and sedimentary structure.

A CCIR aeronautical mobile satellite report

NASA Technical Reports Server (NTRS)

Davarian, Faramaz; Bishop, Dennis; Rogers, David; Smith, Ernest K.

1989-01-01

Propagation effects in the aeronautical mobile-satellite service differ from those in the fixed-satellite service and other mobile-satellite services because: small antennas are used on aircraft, and the aircraft body may affect the performance of the antenna; high aircraft speeds cause large Doppler spreads; aircraft terminals must accommodate a large dynamic range in transmission and reception; and due to their high speeds, banking maneuvers, and three-dimensional operation, aircraft routinely require exceptionally high integrity of communications, making even short-term propagation effects very important. Data and models specifically required to characterize the path impairments are discussed, which include: tropospheric effects, including gaseous attenuation, cloud and rain attenuation, fog attenuation, refraction and scintillation; surface reflection (multipath) effects; ionospheric effects such as scintillation; and environmental effects (aircraft motion, sea state, land surface type). Aeronautical mobile-satellite systems may operate on a worldwide basis, including propagation paths at low elevation angles. Several measurements of multipath parameters over land and sea were conducted. In some cases, laboratory simulations are used to compare measured data and verify model parameters. The received signals is considered in terms of its possible components: a direct wave subject to atmospheric effects, and a reflected wave, which generally contains mostly a diffuse component.

Intrinsic origin of two-dimensional electron gas at the (001) surface of SrTiO3

NASA Astrophysics Data System (ADS)

Delugas, Pietro; Fiorentini, Vincenzo; Mattoni, Alessandro; Filippetti, Alessio

2015-03-01

It is generally assumed that two-dimensional electron gas (2DEG) recently observed at the (001) SrTiO3 surface can be solely derived by oxygen vacancies introduced during ultrahigh vacuum annealing or through ultraviolet irradiation exposure. However, 2DEG entirely due to defect formation may be at odds with the characteristics of high mobility and easy field-effect manipulation required for applications; to that aim, an intrinsic formation mechanism should be preferred. Using advanced ab initio simulations we give evidence that 2DEG at the (001) SrTiO3 surface may even result from purely intrinsic properties of the pristine surface, provided that the surface is SrO terminated. The key concept is that the SrO termination is electron-attractive as a consequence of both the surface-induced polarity and the specific electronic reconstruction, whereas the TiO2 termination is electron-repulsive. It follows that in vacuum-cleaved samples where both terminations are present, 2DEG can result from the structurally ordered superposition of the two kinds of domain, even in the absence of any extrinsic source. On the other hand, in etching-prepared single-terminated TiO2 samples 2DEG should be assumed as entirely derived by extrinsic factors.

High Capacity Cathode Materials for Next Generation Energy Storage

NASA Astrophysics Data System (ADS)

Papandrea, Benjamin John

Energy storage devices are of increasing importance for applications in mobile electronics, hybrid electric vehicles, and can also play a critical role in renewable energy harvesting, conversion and storage. Since its commercial inception in the 1990's, the lithium-ion battery represents the dominant energy storage technology for mobile power supply today. However, the total capacity of lithium-ion batteries is largely limited by the theoretical capacities of the cathode materials such as LiCoO2 (272 mAh g-1), and LiFePO4 (170 mAh g-1), and cannot satisfy the increasing consumer demand, thus new cathode materials with higher capacities must be explored. Two of the most promising cathode materials with significantly larger theoretical capacities are sulfur (1675 mAh g-1) and air, specifically the oxygen (3840 mAh g-1). However, the usage of either of these cathodic materials is plagued with numerous issues that must be overcome before their commercialization. In the first part of my dissertation, we investigated the usage of a three-dimensional graphene membrane for a high energy density lithium-air (Li-Air) battery in ambient condition. One of the issues with Li-Air batteries is the many side reaction that can occur during discharge in ambient condition, especially with water vapor. Using a hydrophobic tortuous three-dimensional graphene membrane we are able to inhibit the diffusion of water vapor and create a lithium-air battery that cycles over 2000 times with a capacity limited at 140 mAh g-1, over 100 cycles with a capacity limited at 1425 mAh g-1, and over 20 cycles at the high capacity of 5700 mAh g-1. In the second part of my dissertation, we investigate the usage of a three-dimensional graphene aerogel to maximize the loading of sulfur to create a freestanding electrode with high capacity for a lithium-sulfur (Li-S) battery. We demonstrated that our three-dimensional graphene aerogel could sustain a loading of 95% by weight, and we achieved a capacity of 969 mAh g-1 normalized by the entire electrode with a 90% sulfur loading. In the third and final part of my dissertation, we investigate the usage of catalysts for both Li-Air, and Li-S batteries. We demonstrate how different noble metal configurations are optimal for Li-Air batteries, showcase how different metals effect the sulfur reduction reaction, and how both Pt and Mn increase the capacity of Li-S battery by interacting with the sulfur redox reactions intermediate species.

Electrothermal flow effects in insulating (electrodeless) dielectrophoresis systems.

PubMed

Hawkins, Benjamin G; Kirby, Brian J

2010-11-01

We simulate electrothermally induced flow in polymeric, insulator-based dielectrophoresis (iDEP) systems with DC-offset, AC electric fields at finite thermal Péclet number, and we identify key regimes where electrothermal (ET) effects enhance particle deflection and trapping. We study a single, two-dimensional constriction in channel depth with parametric variations in electric field, channel geometry, fluid conductivity, particle electrophoretic (EP) mobility, and channel electroosmotic (EO) mobility. We report the effects of increasing particle EP mobility, channel EO mobility, and AC and DC field magnitudes on the mean constriction temperature and particle behavior. Specifically, we quantify particle deflection and trapping, referring to the deviation of particles from their pathlines due to dielectrophoresis as they pass a constriction and the stagnation of particles due to negative dielectrophoresis near a constriction, respectively. This work includes the coupling between fluid, heat, and electromagnetic phenomena via temperature-dependent physical parameters. Results indicate that the temperature distribution depends strongly on the fluid conductivity and electric field magnitude, and particle deflection and trapping depend strongly on the channel geometry. Electrothermal (ET) effects perturb the EO flow field, creating vorticity near the channel constriction and enhancing the deflection and trapping effects. ET effects alter particle deflection and trapping responses in insulator-based dielectrophoresis devices, especially at intermediate device aspect ratios (2 ≤ r ≤ 7) in solutions of higher conductivity (σ m ≥ 1 × 10(-3)S/m). The impact of ET effects on particle deflection and trapping are diminished when particle EP mobility or channel EO mobility is high. In almost all cases, ET effects enhance negative dielectrophoretic particle deflection and trapping phenomena. Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Theoretical prediction of high carrier mobility in single-walled black phosphorus nanotubes

NASA Astrophysics Data System (ADS)

Li, Q. F.; Wang, H. F.; Yang, C. H.; Li, Q. Q.; Rao, W. F.

2018-05-01

One-dimensional semiconductors are promising materials for high-performance nanoscale devices. Using the first-principles calculations combined with deformation potential approximation, we study the electronic structures and carrier transport properties of black phosphorus nanotubes (BPNTs). It is found that both armchair and zigzag BPNTs with diameter 13.5-18.5 Å are direct bandgap semiconductors. At a similar diameter, the carrier mobility of zigzag BPNT is one order of magnitude larger than that of armchair BPNT. For armchair BPNTs, the electron mobility is about 90.70-155.33 cm2 V-1 s-1 at room temperature, which is about three times of its hole counterpart. For zigzag BPNTs, the maximum mobility can reach 2.87 ×103 cm2 V-1 s-1. Furthermore, the electronic properties can be effectively tuned by the strain. For zigzag (0,13) nanotube, there is a direct-to-indirect band gap transition at a tensile strain of about 6%. Moreover, the electron mobility is boosted sharply by one order of magnitude by applying the compressive or tensile strain. The electron mobility increases to 14.05 ×103 cm2 V-1 s-1 at a tensile strain of 9%. Our calculations highlight the tunable electronic properties and superior carrier mobility of BPNTs that are promising for interesting applications in future nano-electronic devices.

Absorptive pinhole collimators for ballistic Dirac fermions in graphene

PubMed Central

Barnard, Arthur W.; Hughes, Alex; Sharpe, Aaron L.; Watanabe, Kenji; Taniguchi, Takashi; Goldhaber-Gordon, David

2017-01-01

Ballistic electrons in solids can have mean free paths far larger than the smallest features patterned by lithography. This has allowed development and study of solid-state electron-optical devices such as beam splitters and quantum point contacts, which have informed our understanding of electron flow and interactions. Recently, high-mobility graphene has emerged as an ideal two-dimensional semimetal that hosts unique chiral electron-optical effects due to its honeycomb crystalline lattice. However, this chiral transport prevents the simple use of electrostatic gates to define electron-optical devices in graphene. Here we present a method of creating highly collimated electron beams in graphene based on collinear pairs of slits, with absorptive sidewalls between the slits. By this method, we achieve beams with angular width 18° or narrower, and transmission matching classical ballistic predictions. PMID:28504264

Evolution of the linear-polarization-angle-dependence of the radiation-induced magnetoresistance-oscillations with microwave power

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ye, Tianyu; Mani, R. G.; Wegscheider, W.

2014-11-10

We examine the role of the microwave power in the linear polarization angle dependence of the microwave radiation induced magnetoresistance oscillations observed in the high mobility GaAs/AlGaAs two dimensional electron system. The diagonal resistance R{sub xx} was measured at the fixed magnetic fields of the photo-excited oscillatory extrema of R{sub xx} as a function of both the microwave power, P, and the linear polarization angle, θ. Color contour plots of such measurements demonstrate the evolution of the lineshape of R{sub xx} versus θ with increasing microwave power. We report that the non-linear power dependence of the amplitude of the radiation-inducedmore » magnetoresistance oscillations distorts the cosine-square relation between R{sub xx} and θ at high power.« less

Automatic Testing and Assessment of Neuroanatomy Using a Digital Brain Atlas: Method and Development of Computer- and Mobile-Based Applications

ERIC Educational Resources Information Center

Nowinski, Wieslaw L.; Thirunavuukarasuu, Arumugam; Ananthasubramaniam, Anand; Chua, Beng Choon; Qian, Guoyu; Nowinska, Natalia G.; Marchenko, Yevgen; Volkau, Ihar

2009-01-01

Preparation of tests and student's assessment by the instructor are time consuming. We address these two tasks in neuroanatomy education by employing a digital media application with a three-dimensional (3D), interactive, fully segmented, and labeled brain atlas. The anatomical and vascular models in the atlas are linked to "Terminologia…

Quality Traceability System of Traditional Chinese Medicine Based on Two Dimensional Barcode Using Mobile Intelligent Technology.

PubMed

Cai, Yong; Li, Xiwen; Wang, Runmiao; Yang, Qing; Li, Peng; Hu, Hao

2016-01-01

Currently, the chemical fingerprint comparison and analysis is mainly based on professional equipment and software, it's expensive and inconvenient. This study aims to integrate QR (Quick Response) code with quality data and mobile intelligent technology to develop a convenient query terminal for tracing quality in the whole industrial chain of TCM (traditional Chinese medicine). Three herbal medicines were randomly selected and their chemical two-dimensional barcode (2D) barcodes fingerprints were constructed. Smartphone application (APP) based on Android system was developed to read initial data of 2D chemical barcodes, and compared multiple fingerprints from different batches of same species or different species. It was demonstrated that there were no significant differences between original and scanned TCM chemical fingerprints. Meanwhile, different TCM chemical fingerprint QR codes could be rendered in the same coordinate and showed the differences very intuitively. To be able to distinguish the variations of chemical fingerprint more directly, linear interpolation angle cosine similarity algorithm (LIACSA) was proposed to get similarity ratio. This study showed that QR codes can be used as an effective information carrier to transfer quality data. Smartphone application can rapidly read quality information in QR codes and convert data into TCM chemical fingerprints.

Remote gaze tracking system for 3D environments.

PubMed

Congcong Liu; Herrup, Karl; Shi, Bertram E

2017-07-01

Eye tracking systems are typically divided into two categories: remote and mobile. Remote systems, where the eye tracker is located near the object being viewed by the subject, have the advantage of being less intrusive, but are typically used for tracking gaze points on fixed two dimensional (2D) computer screens. Mobile systems such as eye tracking glasses, where the eye tracker are attached to the subject, are more intrusive, but are better suited for cases where subjects are viewing objects in the three dimensional (3D) environment. In this paper, we describe how remote gaze tracking systems developed for 2D computer screens can be used to track gaze points in a 3D environment. The system is non-intrusive. It compensates for small head movements by the user, so that the head need not be stabilized by a chin rest or bite bar. The system maps the 3D gaze points of the user onto 2D images from a scene camera and is also located remotely from the subject. Measurement results from this system indicate that it is able to estimate gaze points in the scene camera to within one degree over a wide range of head positions.

Using two-dimensional correlation size exclusion chromatography (2D-CoSEC) to explore the size-dependent heterogeneity of humic substances for copper binding.

PubMed

Lee, Yun-Kyung; Hur, Jin

2017-08-01

Knowledge of the heterogeneous distribution of humic substances (HS) reactivities along a continuum of molecular weight (MW) is crucial for the systems where the HS MW is subject to change. In this study, two dimensional correlation spectroscopy combined with size exclusion chromatography (2D-CoSEC) was first utilized to obtain a continuous and heterogeneous presence of copper binding characteristics within bulk HS with respect to MW. HS solutions with varying copper concentrations were directly injected into a size exclusion chromatography (SEC) system with Tris-HCl buffer as a mobile phase. Several validation tests confirmed neither structural disruption of HS nor competition effect of the mobile phase used. Similar to batch systems, fluorescence quenching was observed in the chromatograms over a wide range of HS MW. 2D-CoSEC maps of a soil-derived HS (Elliot soil humic acid) showed the greater fluorescence quenching degrees with respect to the apparent MW on the order of 12500 Da > 10600 Da > 7000 Da > 15800 Da. The binding constants calculated based on modified Stern-Volmer equation were consistent with the 2D-CoSEC results. More heterogeneity of copper binding affinities within bulk HS was found for the soil-derived HS versus an aquatic HS. The traditional fluorescence quenching titration method using ultrafiltered HS size fractions failed to delineate detailed distribution of the copper binding characteristics, exhibiting a much shorter range of the binding constants than those obtained from the 2D-CoSEC. Our proposed technique demonstrated a great potential to describe metal binding characteristics of HS at high MW resolution, providing a clear picture of the size-dependent metal-HS interactions. Copyright © 2017 Elsevier Ltd. All rights reserved.

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, X.; Nilsson, D.; Danielsson, Ö.

2015-12-28

The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement showsmore » a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.« less

Numerical investigation of cryogen re-gasification in a plate heat exchanger

NASA Astrophysics Data System (ADS)

Malecha, Ziemowit; Płuszka, Paweł; Brenk, Arkadiusz

2017-12-01

The efficient re-gasification of cryogen is a crucial process in many cryogenic installations. It is especially important in the case of LNG evaporators used in stationary and mobile applications (e.g. marine and land transport). Other gases, like nitrogen or argon can be obtained at highest purity after re-gasification from their liquid states. Plate heat exchangers (PHE) are characterized by a high efficiency. Application of PHE for liquid gas vaporization processes can be beneficial. PHE design and optimization can be significantly supported by numerical modelling. Such calculations are very challenging due to very high computational demands and complexity related to phase change modelling. In the present work, a simplified mathematical model of a two phase flow with phase change was introduced. To ensure fast calculations a simplified two-dimensional (2D) numerical model of a real PHE was developed. It was validated with experimental measurements and finally used for LNG re-gasification modelling. The proposed numerical model showed to be orders of magnitude faster than its full 3D original.

Explanation of Educational and Cultural Dimensions of Globalization in the Views of Ayatollah Javadi-Amoli

ERIC Educational Resources Information Center

Soltaninejad, Najme; Keshtiaray, Narges; Vaezi, Seyed Hossein

2017-01-01

Globalization is a multi-dimensional phenomenon as it leads to high mobility in social, political, economic and value fields and besides reduction of the gap between time and place presents new interpretations of politics, economy, culture, government, authority and security. The present study aimed to explain the educational and cultural…

Efficacy of 3-Dimensional plates over Champys miniplates in mandibular anterior fractures

PubMed Central

Barde, Dhananjay H; Mudhol, Anupama; Ali, Fareedi Mukram; Madan, R S; Kar, Sanjay; Ustaad, Farheen

2014-01-01

Background: Mandibular fractures are treated surgically by either rigid or semi-rigid fixation, two techniques that reflect almost opposite concept of craniomaxillofacial osteosynthesis. The shortcomings of these fixations led to the development of 3 dimensional (3D) miniplates. This study was designed with the aim of evaluating the efficiency of 3D miniplate over Champys miniplate in anterior mandibular fractures. Materials & Methods: This study was done in 40 patients with anterior mandibular fractures. Group I consisting of 20 patients in whom 3D plates were used for fixation while in Group II consisting of other 20 patients, 4 holes straight plates were used. The efficacy of 3D miniplate over Champy’s miniplate was evaluated in terms of operating time, average pain, post operative infection, occlusion, wound dehiscence, post operative mobility and neurological deficit. Results: The mean operation time for Group II was more compared to Group I (statistically significant).There was significantly greater pain on day of surgery and at 2nd week for Group II patients but there was no significant difference between the two groups at 4th week. The post operative infection, occlusal disturbance, wound dehiscence, post operative mobility at facture site, neurological deficit was statistically insignificant (chi square test). Conclusion: The results of this study suggest that fixation of anterior mandibular fractures with 3D plates provides three dimensional stability and carries low morbidity and infection rates. The only probable limitation of these 3D plates may be excessive implant material, but they seem to be easy alternative to champys miniplate. How to cite the article: Barde DH, Mudhol A, Ali FM, Madan RS, Kar S, Ustaad F. Efficacy of 3-Dimensional plates over Champys miniplates in mandibular anterior fractures. J Int Oral Health 2014;6(1):20-6. PMID:24653598

Highly anisotropic solar-blind UV photodetector based on large-size two-dimensional α-MoO3 atomic crystals

NASA Astrophysics Data System (ADS)

Zhong, Mianzeng; Zhou, Ke; Wei, Zhongming; Li, Yan; Li, Tao; Dong, Huanli; Jiang, Lang; Li, Jingbo; Hu, Wenping

2018-07-01

Orthorhombic MoO3 (α-MoO3) is a typical layered n-type semiconductor with optical band gap over 2.7 eV, which have been widely studied in catalysis, gas sensing, lithium-ion batteries, field-emission, photoelectrical, photochromic and electrochromic devices, supercapacitors and organic solar cells. However, the bottleneck of generation large size atomic thin two-dimensional (2D) α-MoO3 crystals remain challenging this field (normally several micrometers size). Herein, we developed a facile vapor–solid (VS) process for controllable growth of large-size 2D α-MoO3 single crystals with a few nanometers thick and over 300 μm in lateral size. High-performance solar-blind photodetectors were fabricated based on individual 2D α-MoO3 single crystal. The detectors demonstrate outstanding optoelectronic properties under solar-blind UV light (254 nm), with a photoresponsivity of 67.9 A W‑1, external quantum efficiency of 3.3  ×  104%. More important, the devices showed strong in-plane anisotropy in optoelectronic response and transport properties, e.g. the photocurrent along b-axis was found to be 5 times higher than the values along c-axis under 254 nm UV light, and current ON/OFF ratio and mobility anisotropy is about 2 times high. Our work suggests an optimized synthesis routine for 2D crystals, and the great potential of 2D oxides in functional optoelectronics.

77 FR 3386 - Export and Reexport License Requirements for Certain Microwave and Millimeter Wave Electronic...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-01-24

... electronic components. The two components are packaged high electron mobility transistors and packaged..., 2012, FR Doc. 2012- 135). The two components are packaged high electron mobility transistors (HEMT) and...

Temperature-dependent band structure of SrTiO3 interfaces

NASA Astrophysics Data System (ADS)

Raslan, Amany; Lafleur, Patrick; Atkinson, W. A.

2017-02-01

We build a theoretical model for the electronic properties of the two-dimensional (2D) electron gas that forms at the interface between insulating SrTiO3 and a number of polar cap layers, including LaTiO3, LaAlO3, and GdTiO3. The model treats conduction electrons within a tight-binding approximation and the dielectric polarization via a Landau-Devonshire free energy that incorporates strontium titanate's strongly nonlinear, nonlocal, and temperature-dependent dielectric response. The self-consistent band structure comprises a mix of quantum 2D states that are tightly bound to the interface and quasi-three-dimensional (3D) states that extend hundreds of unit cells into the SrTiO3 substrate. We find that there is a substantial shift of electrons away from the interface into the 3D tails as temperature is lowered from 300 K to 10 K. This shift is least important at high electron densities (˜1014cm-2 ) but becomes substantial at low densities; for example, the total electron density within 4 nm of the interface changes by a factor of two for 2D electron densities ˜1013cm-2 . We speculate that the quasi-3D tails form the low-density high-mobility component of the interfacial electron gas that is widely inferred from magnetoresistance measurements.

The Ronnie Gardiner Rhythm and Music Method - a feasibility study in Parkinson's disease.

PubMed

Pohl, Petra; Dizdar, Nil; Hallert, Eva

2013-01-01

To assess the feasibility of the novel intervention, Ronnie Gardiner Rhythm and Music (RGRM™) Method compared to a control group for patients with Parkinson's disease (PD). Eighteen patients, mean age 68, participating in a disability study within a neurological rehabilitation centre, were randomly allocated to intervention group (n = 12) or control group (n = 6). Feasibility was assessed by comparing effects of the intervention on clinical outcome measures (primary outcome: mobility as assessed by two-dimensional motion analysis, secondary outcomes: mobility, cognition, quality of life, adherence, adverse events and eligibility). Univariable analyses showed no significant differences between groups following intervention. However, analyses suggested that patients in the intervention group improved more on mobility (p = 0.006), cognition and quality of life than patients in the control group. There were no adverse events and a high level of adherence to therapy was observed. In this disability study, the use of the RGRM™ Method showed promising results in the intervention group and the adherence level was high. Our results suggest that most assessments chosen are eligible to use in a larger randomized controlled study for patients with PD. The RGRM™ Method appeared to be a useful and safe method that showed promising results in both motor and cognitive functions as well as quality of life in patients with moderate PD. The RGRM™ Method can be used by physiotherapists, occupational, speech and music therapists in neurological rehabilitation. Most measurements were feasible except for Timed-Up-and-Go.

Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors

DOE PAGES

Lee, Tae Hoon; Kim, Kwanpyo; Kim, Gwangwoo; ...

2017-02-27

Organic field-effect transistors have attracted much attention because of their potential use in low-cost, large-area, flexible electronics. High-performance organic transistors require a low density of grain boundaries in their organic films and a decrease in the charge trap density at the semiconductor–dielectric interface for efficient charge transport. In this respect, the role of the dielectric material is crucial because it primarily determines the growth of the film and the interfacial trap density. Here, we demonstrate the use of chemical vapor-deposited hexagonal boron nitride (CVD h-BN) as a scalable growth template/dielectric for high-performance organic field-effect transistors. The field-effect transistors based onmore » C60 films grown on single-layer CVD h-BN exhibit an average mobility of 1.7 cm 2 V –1 s –1 and a maximal mobility of 2.9 cm 2 V –1 s –1 with on/off ratios of 10 7. The structural and morphology analysis shows that the epitaxial, two-dimensional growth of C 60 on CVD h-BN is mainly responsible for the superior charge transport behavior. In conclusion, we believe that CVD h-BN can serve as a growth template for various organic semiconductors, allowing the development of large-area, high-performance flexible electronics.« less

Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Tae Hoon; Kim, Kwanpyo; Kim, Gwangwoo

Organic field-effect transistors have attracted much attention because of their potential use in low-cost, large-area, flexible electronics. High-performance organic transistors require a low density of grain boundaries in their organic films and a decrease in the charge trap density at the semiconductor–dielectric interface for efficient charge transport. In this respect, the role of the dielectric material is crucial because it primarily determines the growth of the film and the interfacial trap density. Here, we demonstrate the use of chemical vapor-deposited hexagonal boron nitride (CVD h-BN) as a scalable growth template/dielectric for high-performance organic field-effect transistors. The field-effect transistors based onmore » C60 films grown on single-layer CVD h-BN exhibit an average mobility of 1.7 cm 2 V –1 s –1 and a maximal mobility of 2.9 cm 2 V –1 s –1 with on/off ratios of 10 7. The structural and morphology analysis shows that the epitaxial, two-dimensional growth of C 60 on CVD h-BN is mainly responsible for the superior charge transport behavior. In conclusion, we believe that CVD h-BN can serve as a growth template for various organic semiconductors, allowing the development of large-area, high-performance flexible electronics.« less

Diverse carrier mobility of monolayer BNC_x: A combined density functional theory and Boltzmann transport theory study.

PubMed

Wu, Tao; Deng, Kaiming; Deng, Wei-Qiao; Lu, Ruifeng

2017-09-19

BNCX monolayer as a kind of two-dimensional material has numerous chemical atomic ratios and arrangements with different electronic structures. Via calculations on the basis of density functional theory and Boltzmann transport theory under deformation potential approximation, the band structures and carrier mobilities of BNCX (x=1,2,3,4) nanosheets are systematically investigated. The calculated results show that BNC2-1 is a material with very small band gap (0.02 eV) among all the structures while other BNCX monolayers are semiconductors with band gap ranging from 0.51 to 1.32 eV. The carrier mobility of BNCX varies considerably from tens to millions of cm2 V-1 s-1. For BNC2-1, the hole mobility and electron mobility along both x and y directions can reach 105 orders of magnitude, which is similar to the carrier mobility of graphene. Besides, all studied BNCX monolayers obviously have anisotropic hole mobility and electron mobility. In particular, for semiconductor BNC4, its hole mobility along y direction and electron mobility along x direction unexpectedly reach 106 orders of magnitude, even higher than that of graphene. Our findings suggest that BNCX layered materials with proper ratio and arrangement of carbon atoms will possess desirable charge transport properties, exhibiting potential applications in nanoelectronic devices. © 2017 IOP Publishing Ltd.

Mobile three-dimensional visualisation technologies for clinician-led fall prevention assessments.

PubMed

Hamm, Julian; Money, Arthur G; Atwal, Anita; Ghinea, Gheorghita

2017-08-01

The assistive equipment provision process is routinely carried out with patients to mitigate fall risk factors via the fitment of assistive equipment within the home. However, currently, over 50% of assistive equipment is abandoned by the patients due to poor fit between the patient and the assistive equipment. This paper explores clinician perceptions of an early stage three-dimensional measurement aid prototype, which provides enhanced assistive equipment provision process guidance to clinicians. Ten occupational therapists trialled the three-dimensional measurement aid prototype application; think-aloud and semi-structured interview data was collected. Usability was measured with the System Usability Scale. Participants scored three-dimensional measurement aid prototype as 'excellent' and agreed strongly with items relating to the usability and learnability of the application. The qualitative analysis identified opportunities for improving existing practice, including, improved interpretation/recording measurements; enhanced collaborative practice within the assistive equipment provision process. Future research is needed to determine the clinical utility of this application compared with two-dimensional counterpart paper-based guidance leaflets.

Soil moisture flow and nitrate transport through partially saturated zone considering mobile-immobile approach using 3D tank setup

NASA Astrophysics Data System (ADS)

Tomar, J.; Yadav, B. K.

2016-12-01

The aim of this study is to investigate the soil water flow and nitrate movement through vadose zone considering mobile-immobile approach using large scale three dimensional (3D) tank setup. The three dimensional sand tank setup was fabricated having dimension of 60 cm length, 30 cm width and 60 cm height and embedded with horizontal and vertical layers of sampling ports. The tank was filled with a porous media of average size of 0.5 to 1.0 mm homogeneous and nitrate concentration of 300 mg/l was applied with a distributed constant water flux of 150ml/hr. at the top using a sprinkler system. Pore water samples were collected hourly from the sampling ports and were analyzed using UV-spectrophotometer. The soil hydraulic and solute transport parameters were deduced from the laboratory experiments for simulating the considered 3D domain using the mobile-immobile approach. Soil moisture flow and contaminant transport equations are numerically solved for simulating the nitrate movement in the tank setup. The simulated break through curves (BTC) show the nitrate movement is rapid in mobile region by a factor of 1.2 as compared with the immobile region. The results show that the mobile-immobile approach of predicting solute transport in variably saturated zone can be used effectively in field after getting the required parameters using the laboratory experiments under similar environmental conditions. The high concentration 130 ppm was observed in lateral and transverse axis at 05 cm depth. This results will help in further investigation in field and in implementation of decontamination techniques.

Graphene-graphite oxide field-effect transistors.

PubMed

Standley, Brian; Mendez, Anthony; Schmidgall, Emma; Bockrath, Marc

2012-03-14

Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO(2) or HfO(2). In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO(2), typically ~1-3 × 10(8) V/m, while its dielectric constant is slightly higher, κ ≈ 4.3. © 2012 American Chemical Society

Multiband superconductivity and nanoscale inhomogeneity at oxide interfaces

NASA Astrophysics Data System (ADS)

Caprara, S.; Biscaras, J.; Bergeal, N.; Bucheli, D.; Hurand, S.; Feuillet-Palma, C.; Rastogi, A.; Budhani, R. C.; Lesueur, J.; Grilli, M.

2013-07-01

The two-dimensional electron gas at the LaTiO3/SrTiO3 or LaAlO3/SrTiO3 oxide interfaces becomes superconducting when the carrier density is tuned by gating. The measured resistance and superfluid density reveal an inhomogeneous superconductivity resulting from percolation of filamentary structures of superconducting “puddles” with randomly distributed critical temperatures, embedded in a nonsuperconducting matrix. Following the evidence that superconductivity is related to the appearance of high-mobility carriers, we model intrapuddle superconductivity by a multiband system within a weak coupling BCS scheme. The microscopic parameters, extracted by fitting the transport data with a percolative model, yield a consistent description of the dependence of the average intrapuddle critical temperature and superfluid density on the carrier density.

Electronic transport properties of suspended few-nm black phosphorus nanoribbons

NASA Astrophysics Data System (ADS)

Masih Das, Paul; Danda, Gopinath; Cupo, Andrew; Jothi Thiruraman, Priyanka; Meunier, Vincent; Drndic, Marija

Theoretical studies of few-nm wide black phosphorus nanoribbons have revealed highly tunable, width-dependent properties such as modulation of bandgap magnitude and carrier mobility. Due to the atmospheric instability of black phosphorus in the few-layer regime and a lack of suitable lithographic patterning techniques, these structures have yet to be reported. Here, we demonstrate the fabrication of few-nm wide and thick black phosphorus nanoribbons via in situ electron beam nanosculpting. We also present in situ orientation- and width-dependent two-terminal electronic transport measurements of these structures. These measurements yield valuable insight into the semiconducting properties of black phosphorus and its associated lower-dimensional nanostructures. NIH Grant R21HG007856, NSF Grant EFRI 2-DARE (EFRI-1542707).

Kekule.js: An Open Source JavaScript Chemoinformatics Toolkit.

PubMed

Jiang, Chen; Jin, Xi; Dong, Ying; Chen, Ming

2016-06-27

Kekule.js is an open-source, object-oriented JavaScript toolkit for chemoinformatics. It provides methods for many common tasks in molecular informatics, including chemical data input/output (I/O), two- and three-dimensional (2D/3D) rendering of chemical structure, stereo identification, ring perception, structure comparison, and substructure search. Encapsulated widgets to display and edit chemical structures directly in web context are also supplied. Developed with web standards, the toolkit is ideal for building chemoinformatics applications over the Internet. Moreover, it is highly platform-independent and can also be used in desktop or mobile environments. Some initial applications, such as plugins for inputting chemical structures on the web and uses in chemistry education, have been developed based on the toolkit.

Effect of p-GaN layer doping on the photoresponse of GaN-based p-i-n ultraviolet photodetectors

NASA Astrophysics Data System (ADS)

Wang, Jun; Guo, Jin; Xie, Feng; Wang, Wanjun; Wang, Guosheng; Wu, Haoran; Wang, Tanglin; Song, Man

2015-08-01

We report on two-dimensional (2D) numerical simulations of photoresponse characteristics for GaN based p-i-n ultraviolet (UV) photodetectors. Effects of doping density of p-GaN layer on the photoresponse have been investigated. In order to accurately simulate the device performance, the theoretical calculation includes doping-dependent mobility degradation by Arora model and high field saturation model. Theoretical modeling shows that the doping density of p- GaN layer can significantly affect the photoresponse of GaN based p-i-n UV photodetectors, especially at schottky contact. We have to make a suitable choice of the doping in the device design according to the simulation results.

Two-dimensional wavelength routing for transparent optical wireless networking

NASA Astrophysics Data System (ADS)

Shi, Haiyan; Liang, Kefei; Sheard, Stephen J.; O'Brien, Dominic C.; Faulkner, Grahame E.

2005-08-01

In this article a novel system architecture that uses a combination of wavelength and spatial diversity for indoor infrared wireless communications is presented. This configuration promises to fully exploit the available bandwidth of optics and demonstrate all-optical networking. Electronic processing is restricted to mobile terminals, with base stations potentially remaining passive, without any conversion between optics and electronics. For the downlink, multiple transmitter beams with different wavelengths are steered from the fiber infrastructure through the base station to mobile terminals located in different positions. An optimum combination of diffractive optics and reflective optics (a diffraction grating and an array of mirrors) can flexibly steer each transmitter beam and enable full control over the required coverage pattern. For the uplink, in the transmitter, another grating and an array of mirrors can direct multiple beams upward from different mobile users toward the base station. System simulation shows that the downlink has the potential to approach 10 Gbit/s, while maintaining wide-area coverage (such as in a room of 3m×4m×4m) with the help of fine optical tracking. System modeling indicates that the uplink is more susceptible to power losses than the downlink, but the utilization of dynamic beam steering in the uplink can suppress power losses to a tolerable level (e.g. below 30dB). An array of 16 mirrors has been designed to implement point-to-point beam steering in a room of 3m×1m×1m. Two-dimensional coverage patterns measured at a distance of 0.5 m and 1.5 m coincide with simulation results. Operation at 1 Gbit/s has been demonstrated successfully for tracking in two dimensions.

A mobile precursor determines protein resistance on nanostructured surfaces.

PubMed

Wang, Kang; Chen, Ye; Gong, Xiangjun; Xia, Jianlong; Zhao, Junpeng; Shen, Lei

2018-05-09

Biomaterials are often engineered with nanostructured surfaces to control interactions with proteins and thus regulate their biofunctions. However, the mechanism of how nanostructured surfaces resist or attract proteins together with the underlying design rules remains poorly understood at a molecular level, greatly limiting attempts to develop high-performance biomaterials and devices through the rational design of nanostructures. Here, we study the dynamics of nonspecific protein adsorption on block copolymer nanostructures of varying adhesive domain areas in a resistant matrix. Using surface plasmon resonance and single molecule tracking techniques, we show that weakly adsorbed proteins with two-dimensional diffusivity are critical precursors to protein resistance on nanostructured surfaces. The adhesive domain areas must be more than tens or hundreds of times those of the protein footprints to slow down the 2D-mobility of the precursor proteins for their irreversible adsorption. This precursor model can be used to quantitatively analyze the kinetics of nonspecific protein adsorption on nanostructured surfaces. Our method is applicable to precisely manipulate protein adsorption and resistance on various nanostructured surfaces, e.g., amphiphilic, low-surface-energy, and charged nanostructures, for the design of protein-compatible materials.

Band structure engineering of 2D materials using patterned dielectric superlattices.

PubMed

Forsythe, Carlos; Zhou, Xiaodong; Watanabe, Kenji; Taniguchi, Takashi; Pasupathy, Abhay; Moon, Pilkyung; Koshino, Mikito; Kim, Philip; Dean, Cory R

2018-05-07

The ability to manipulate electrons in two-dimensional materials with external electric fields provides a route to synthetic band engineering. By imposing artificially designed and spatially periodic superlattice potentials, electronic properties can be further altered beyond the constraints of naturally occurring atomic crystals 1-5 . Here, we report a new approach to fabricate high-mobility superlattice devices by integrating surface dielectric patterning with atomically thin van der Waals materials. By separating the device assembly and superlattice fabrication processes, we address the intractable trade-off between device processing and mobility degradation that constrains superlattice engineering in conventional systems. The improved electrostatics of atomically thin materials allows smaller wavelength superlattice patterns relative to previous demonstrations. Moreover, we observe the formation of replica Dirac cones in ballistic graphene devices with sub-40 nm wavelength superlattices and report fractal Hofstadter spectra 6-8 under large magnetic fields from superlattices with designed lattice symmetries that differ from that of the host crystal. Our results establish a robust and versatile technique for band structure engineering of graphene and related van der Waals materials with dynamic tunability.

Surface segregation and the Al problem in GaAs quantum wells

NASA Astrophysics Data System (ADS)

Chung, Yoon Jang; Baldwin, K. W.; West, K. W.; Shayegan, M.; Pfeiffer, L. N.

2018-03-01

Low-defect two-dimensional electron systems (2DESs) are essential for studies of fragile many-body interactions that only emerge in nearly-ideal systems. As a result, numerous efforts have been made to improve the quality of modulation-doped AlxGa1 -xAs /GaAs quantum wells (QWs), with an emphasis on purifying the source material of the QW itself or achieving better vacuum in the deposition chamber. However, this approach overlooks another crucial component that comprises such QWs, the AlxGa1 -xAs barrier. Here we show that having a clean Al source and hence a clean barrier is instrumental to obtain a high-quality GaAs 2DES in a QW. We observe that the mobility of the 2DES in GaAs QWs declines as the thickness or Al content of the AlxGa1 -xAs barrier beneath the QW is increased, which we attribute to the surface segregation of oxygen atoms that originate from the Al source. This conjecture is supported by the improved mobility in the GaAs QWs as the Al cell is cleaned out by baking.

Single-Particle Mobility Edge in a One-Dimensional Quasiperiodic Optical Lattice

NASA Astrophysics Data System (ADS)

Lüschen, Henrik P.; Scherg, Sebastian; Kohlert, Thomas; Schreiber, Michael; Bordia, Pranjal; Li, Xiao; Das Sarma, S.; Bloch, Immanuel

2018-04-01

A single-particle mobility edge (SPME) marks a critical energy separating extended from localized states in a quantum system. In one-dimensional systems with uncorrelated disorder, a SPME cannot exist, since all single-particle states localize for arbitrarily weak disorder strengths. However, in a quasiperiodic system, the localization transition can occur at a finite detuning strength and SPMEs become possible. In this Letter, we find experimental evidence for the existence of such a SPME in a one-dimensional quasiperiodic optical lattice. Specifically, we find a regime where extended and localized single-particle states coexist, in good agreement with theoretical simulations, which predict a SPME in this regime.

Three-dimensional computerized mobilization of the cervical spine for the treatment of chronic neck pain: a pilot study.

PubMed

River, Yaron; Aharony, Shelly; Bracha, Jillian; Levital, Tamir; Gerwin, Robert

2014-07-01

Manual therapies for chronic neck pain are imprecise, inconsistent, and brief due to therapist fatigue. A previous study showed that computerized mobilization of the cervical spine in the sagittal plane is a safe and potentially effective treatment of chronic neck pain. To investigate the safety and efficacy of computerized mobilization of the cervical spine in a three-dimensional space for the treatment of chronic neck pain. Pilot, open trial. Physical therapy outpatient department. Nine patients with chronic neck pain. A computerized cradle capable of three-dimensional neck mobilizations was used. Treatment sessions lasted 20 minutes, biweekly, for six weeks. Visual analog scale (VAS) for pain, cervical range of motion (CROM), neck disability index (NDI), joint position error (JPE), and muscle algometry. Comparing baseline at week one with week six (end of treatment), the VAS scores dropped by 2.9 points (P < 0.01). The six directions of movement studied by the CROM showed a combined increase of 11% (P = 0.01). The NDI decreased significantly from 16 to 10 (P = 0.03), and the JPE decreased significantly from 3.7° to 1.9° (P = 0.047). There was no change in the pressure pain threshold in any muscle tested. There were no significant adverse effects. These preliminary results demonstrate that this novel, computerized, three-dimensional cervical mobilization device is probably safe. The data also suggest that this method is effective in alleviating neck pain and associated headache, and in increasing the CROM, although the sample size was small in this open trial. Wiley Periodicals, Inc.

Novel nano materials for high performance logic and memory devices

NASA Astrophysics Data System (ADS)

Das, Saptarshi

After decades of relentless progress, the silicon CMOS industry is approaching a stall in device performance for both logic and memory devices due to fundamental scaling limitations. In order to reinforce the accelerating pace, novel materials with unique properties are being proposed on an urgent basis. This list includes one dimensional nanotubes, quasi one dimensional nanowires, two dimensional atomistically thin layered materials like graphene, hexagonal boron nitride and the more recently the rich family of transition metal di-chalcogenides comprising of MoS2, WSe2, WS2 and many more for logic applications and organic and inorganic ferroelectrics, phase change materials and magnetic materials for memory applications. Only time will tell who will win, but exploring these novel materials allow us to revisit the fundamentals and strengthen our understanding which will ultimately be beneficial for high performance device design. While there has been growing interest in two-dimensional (2D) crystals other than graphene, evaluating their potential usefulness for electronic applications is still in its infancies due to the lack of a complete picture of their performance potential. The fact that the 2-D layered semiconducting di-chalcogenides need to be connected to the "outside" world in order to capitalize on their ultimate potential immediately emphasizes the importance of a thorough understanding of the contacts. This thesis demonstrate that through a proper understanding and design of source/drain contacts and the right choice of number of MoS2 layers the excellent intrinsic properties of this 2D material can be harvested. A comprehensive experimental study on the dependence of carrier mobility on the layer thickness of back gated multilayer MoS 2 field effect transistors is also provided. A resistor network model that comprises of Thomas-Fermi charge screening and interlayer coupling is used to explain the non-monotonic trend in the extracted field effect mobility with the layer thickness. The non-monotonic trend suggests that in order to harvest the maximum potential of MoS2 for high performance device applications, a layer thickness in the range of 6-12 nm would be ideal. Finally using scandium contacts on 10nm thick exfoliated MoS2 flakes that are covered by a 15nm ALD grown Al2O3 film, record high mobility of 700cm2/Vs is achieved at room-temperature which is extremely encouraging for the design of high performance logic devices. The destructive nature of the readout process in Ferroelectric Random Access Memories (FeRAMs) is one of the major limiting factors for their wide scale commercialization. Utilizing Ferroelectric Field-Effect Transistor RAM (FeTRAM) instead solves the destructive read out problem, but at the expense of introducing crystalline ferroelectrics that are hard to integrate into CMOS. In order to address these challenges a novel, fully functional, CMOS compatible, One-Transistor-One-Transistor (1T1T) memory cell architecture using an organic ferroelectric -- PVDF-TrFE -- as the memory storage unit (gate oxide) and a silicon nanowire as the memory read out unit (channel material) is proposed and experimentally demonstrated. While evaluating the scaling potential of the above mentioned organic FeTRAM, it is found that the switching time and switching voltage of this organic copolymer PVDF-TrFE exhibits an unexpected scaling behavior as a function of the lateral device dimensions. The phenomenological theory, that explains this abnormal scaling trend, involves in-plane interchain and intrachain interaction of the copolymer - resulting in a power-law dependence of the switching field on the device area (ESW alpha ACH0.1) that is ultimately responsible for the decrease in the switching time and switching voltage. These findings are encouraging since they indicate that scaling the switching voltage and switching time without aggressively scaling the copolymer thickness occurs naturally while scaling the device area -- in this way ultimately improving the packing density and leading towards high performance memory devices.

Measurements of Translational and Rotational Mobilities of Inclusions near a Boundary in TiltedFreely-Suspended Smectic Liquid Crystal Films

NASA Astrophysics Data System (ADS)

Cadenhead, Ian; Green, Adam; Park, Cheol; Glaser, Matt; Maclennan, Joe; Clark, Noel

Freely-suspended liquid crystal films serve as an excellent model system for investigating two-dimensional hydrodynamics, including the study of inclusion mobilities near fixed boundaries. We present experimental measurements using digital video microscopy of the translational and rotational mobilities of smectic islands near the boundary of a rectangular smectic A film a few molecular layers thick. The islands are thicker, circular domains that behave as large particles embedded in the film. Tilting the film causes the islands to drift under gravity. Measuring the diffusion and velocities of these islands allows us to extract the translational and rotational mobilities of the inclusions as a function of distance from the film boundary. The results are compared to Saffman-Delbrück theory using the general approach of Levine and MacKintosh. This work was supported by NASA Grant No. NNX-13AQ81G, and NSF MRSEC Grants No. DMR-0820579 and DMR-1420736.

Sediment heterogeneity and mobility in the morphodynamic modelling of gravel-bed braided rivers

NASA Astrophysics Data System (ADS)

Singh, Umesh; Crosato, Alessandra; Giri, Sanjay; Hicks, Murray

2017-06-01

The effects of sediment heterogeneity and sediment mobility on the morphology of braided rivers are still poorly studied, especially when the partial sediment mobility occurs. Nevertheless, increasing the bed sediment heterogeneity by coarse sediment supply is becoming a common practice in river restoration projects and habitat improvement all over the world. This research provides a step forward in the identification of the effects of sediment sorting on the evolution of sediment bars and braiding geometry of gravel-bed rivers. A two-dimensional morphodynamic model was used to simulate the long-term developments of a hypothetical braided system with discharge regime and morphodynamic parameters derived from the Waimakariri River, New Zealand. Several scenarios, differing in bed sediment heterogeneity and sediment mobility, were considered. The results agree with the tendencies already identified in linear analyses and experimental studies, showing that a larger sediment heterogeneity increases the braiding indes and reduces the bars length and height. The analyses allowed identifying the applicability limits of uniform sediment and variable discharge modelling approaches.

Bottom-up assembly of metallic germanium.

PubMed

Scappucci, Giordano; Klesse, Wolfgang M; Yeoh, LaReine A; Carter, Damien J; Warschkow, Oliver; Marks, Nigel A; Jaeger, David L; Capellini, Giovanni; Simmons, Michelle Y; Hamilton, Alexander R

2015-08-10

Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material, a light emitting medium in silicon-integrated lasers, and a plasmonic conductor for bio-sensing. Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (10(19) to 10(20) cm(-3)) low-resistivity (10(-4)Ω · cm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based doping technologies. We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory.

On learning navigation behaviors for small mobile robots with reservoir computing architectures.

PubMed

Antonelo, Eric Aislan; Schrauwen, Benjamin

2015-04-01

This paper proposes a general reservoir computing (RC) learning framework that can be used to learn navigation behaviors for mobile robots in simple and complex unknown partially observable environments. RC provides an efficient way to train recurrent neural networks by letting the recurrent part of the network (called reservoir) be fixed while only a linear readout output layer is trained. The proposed RC framework builds upon the notion of navigation attractor or behavior that can be embedded in the high-dimensional space of the reservoir after learning. The learning of multiple behaviors is possible because the dynamic robot behavior, consisting of a sensory-motor sequence, can be linearly discriminated in the high-dimensional nonlinear space of the dynamic reservoir. Three learning approaches for navigation behaviors are shown in this paper. The first approach learns multiple behaviors based on the examples of navigation behaviors generated by a supervisor, while the second approach learns goal-directed navigation behaviors based only on rewards. The third approach learns complex goal-directed behaviors, in a supervised way, using a hierarchical architecture whose internal predictions of contextual switches guide the sequence of basic navigation behaviors toward the goal.

Electrical and Optical Characteristics of Undoped and Se-Doped Bi2S3 Transistors

NASA Astrophysics Data System (ADS)

Kilcoyne, Colin; Alsaqqa, Ali; Rahman, Ajara A.; Whittaker-Brooks, Luisa; Sambandamurthy, G.

Semiconducting chalcogenides have been drawing increased attention due to their interesting physical properties, especially in low dimensional structures. Bi2S3 has demonstrated a high optical absorption coefficient, a large bulk mobility, small bandgap, high Seebeck coefficient, and low thermal conductivity. These properties make it a good candidate for optical, electric and thermoelectric applications. However, control over the electrical properties for enhanced thermoelectric performance and optical applications is desired. We present electrical transport and optical properties from individual nanowire and few-layer transistors of single crystalline undoped and Se-doped Bi2S3-xSex. All devices exhibit n-type semiconducting behavior and the ON/OFF ratio, mobility, and conductivity noise behavior are studied as functions of dopant concentration, temperature, and charge carrier density in different conduction regimes. The roles of dopant driven scattering mechanisms and mobility/carrier density fluctuations will be discussed. The potential for this series of materials as optical and electrical switches will be presented. NSF DMR.

Dimensionality reduction of collective motion by principal manifolds

NASA Astrophysics Data System (ADS)

Gajamannage, Kelum; Butail, Sachit; Porfiri, Maurizio; Bollt, Erik M.

2015-01-01

While the existence of low-dimensional embedding manifolds has been shown in patterns of collective motion, the current battery of nonlinear dimensionality reduction methods is not amenable to the analysis of such manifolds. This is mainly due to the necessary spectral decomposition step, which limits control over the mapping from the original high-dimensional space to the embedding space. Here, we propose an alternative approach that demands a two-dimensional embedding which topologically summarizes the high-dimensional data. In this sense, our approach is closely related to the construction of one-dimensional principal curves that minimize orthogonal error to data points subject to smoothness constraints. Specifically, we construct a two-dimensional principal manifold directly in the high-dimensional space using cubic smoothing splines, and define the embedding coordinates in terms of geodesic distances. Thus, the mapping from the high-dimensional data to the manifold is defined in terms of local coordinates. Through representative examples, we show that compared to existing nonlinear dimensionality reduction methods, the principal manifold retains the original structure even in noisy and sparse datasets. The principal manifold finding algorithm is applied to configurations obtained from a dynamical system of multiple agents simulating a complex maneuver called predator mobbing, and the resulting two-dimensional embedding is compared with that of a well-established nonlinear dimensionality reduction method.

Sediment mobility and bed armoring in the St Clair River: insights from hydrodynamic modeling

USGS Publications Warehouse

Liu, Xiaofeng; Parker, Gary; Czuba, Jonathan A.; Oberg, Kevin; Mier, Jose M.; Best, James L.; Parsons, Daniel R.; Ashmore, Peter; Krishnappan, Bommanna G.; Garcia, Marcelo H.

2012-01-01

The lake levels in Lake Michigan-Huron have recently fallen to near historical lows, as has the elevation difference between Lake Michigan-Huron compared to Lake Erie. This decline in lake levels has the potential to cause detrimental impacts on the lake ecosystems, together with social and economic impacts on communities in the entire Great Lakes region. Results from past work suggest that morphological changes in the St Clair River, which is the only natural outlet for Lake Michigan-Huron, could be an appreciable factor in the recent trends of lake level decline. A key research question is whether bed erosion within the river has caused an increase in water conveyance, therefore, contributed to the falling lake level. In this paper, a numerical modeling approach with field data is used to investigate the possibility of sediment movement in the St Clair River and assess the likelihood of morphological change under the current flow regime. A two-dimensional numerical model was used to study flow structure, bed shear stress, and sediment mobility/armoring over a range of flow discharges. Boundary conditions for the numerical model were provided by detailed field measurements that included high-resolution bathymetry and three-dimensional flow velocities. The results indicate that, without considering other effects, under the current range of flow conditions, the shear stresses produced by the river flow are too low to transport most of the coarse bed sediment within the reach and are too low to cause substantial bed erosion or bed scour. However, the detailed maps of the bed show mobile bedforms in the upper St Clair River that are indicative of sediment transport. Relatively high shear stresses near a constriction at the upstream end of the river and at channel bends could cause local scour and deposition. Ship-induced propeller wake erosion also is a likely cause of sediment movement in the entire reach. Other factors that may promote sediment movement, such as ice cover and dredging in the lower river, require further investigation.

Controllable Spatial Configuration on Cathode Interface for Enhanced Photovoltaic Performance and Device Stability.

PubMed

Li, Jiangsheng; Duan, Chenghao; Wang, Ning; Zhao, Chengjie; Han, Wei; Jiang, Li; Wang, Jizheng; Zhao, Yingjie; Huang, Changshui; Jiu, Tonggang

2018-05-08

The molecular structure of cathode interface modification materials can affect the surface morphology of the active layer and key electron transfer processes occurring at the interface of polymer solar cells in inverted structures mostly due to the change of molecular configuration. To investigate the effects of spatial configuration of the cathode interfacial modification layer on polymer solar cells device performances, we introduced two novel organic ionic salts (linear NS2 and three-dimensional (3D) NS4) combined with the ZnO film to fabricate highly efficient inverted solar cells. Both organic ionic salts successfully decreased the surface traps of the ZnO film and made its work function more compatible. Especially NS4 in three-dimensional configuration increased the electron mobility and extraction efficiency of the interfacial film, leading to a significant improvement of device performance. Power conversion efficiency (PCE) of 10.09% based on NS4 was achieved. Moreover, 3D interfacial modification could retain about 92% of its initial PCE over 160 days. It is proposed that 3D interfacial modification retards the element penetration-induced degradation without impeding the electron transfer from the active layer to the ZnO film, which significantly improves device stability. This indicates that inserting three-dimensional organic ionic salt is an efficient strategy to enhance device performance.

On-line comprehensive two-dimensional normal-phase liquid chromatography × reversed-phase liquid chromatography for preparative isolation of Peucedanum praeruptorum.

PubMed

Wang, Xin-Yuan; Li, Jia-Fu; Jian, Ya-Mei; Wu, Zhen; Fang, Mei-Juan; Qiu, Ying-Kun

2015-03-27

A new on-line comprehensive preparative two-dimensional normal-phase liquid chromatography × reversed-phase liquid chromatography (2D NPLC × RPLC) system was developed for the separation of complicated natural products. It was based on the use of a silica gel packed medium-pressure column as the first dimension and an ODS preparative HPLC column as the second dimension. The two dimensions were connected with normal-phase (NP) and reversed-phase (RP) enrichment units, involving a newly developed airflow assisted adsorption (AAA) technique. The instrument operation and the performance of this NPLC × RPLC separation method were illustrated by gram-scale isolation of ethanol extract from the roots of Peucedanum praeruptorum. In total, 19 compounds with high purity were obtained via automated multi-step preparative separation in a short period of time using this system, and their structures were comprehensively characterized by ESI-MS, (1)H NMR, and (13)C NMR. Including two new compounds, five isomers in two groups with identical HPLC and TLC retention values were also obtained and identified by 1D NMR and 2D NMR. This is the first report of an NPLC × RPLC system successfully applied in an on-line preparative process. This system not only solved the interfacing problem of mobile-phase immiscibility caused by NP and RP separation, it also exhibited apparent advantages in separation efficiency and sample treatment capacity compared with conventional methods. Copyright © 2015 Elsevier B.V. All rights reserved.

Design of lateral heterostructure from arsenene and antimonene

NASA Astrophysics Data System (ADS)

Sun, Qilong; Dai, Ying; Ma, Yandong; Yin, Na; Wei, Wei; Yu, Lin; Huang, Baibiao

2016-09-01

Lateral heterostructures fabricated by two-dimensional building blocks have opened up exciting realms in material science and device physics. Identifying suitable materials for creating such heterostructures is urgently needed for the next-generation devices. Here, we demonstrate a novel type of seamless lateral heterostructures with excellent stabilities formed within pristine arsenene and antimonene. We find that these heterostructures could possess direct and reduced energy gaps without any modulations. Moreover, the highly coveted type-II alignment and the high carrier mobility are also identified, marking the enhanced quantum efficiency. The tensile strain can result in efficient bandgap engineering. Besides, the proposed critical condition for favored direct energy gaps would have a guiding significance on the subsequent works. Generally, our predictions not only introduce new vitality into lateral heterostructures, enriching available candidate materials in this field, but also highlight the potential of these lateral heterostructures as appealing materials for future devices.

Giant edge spin accumulation in a symmetric quantum well with two subbands

NASA Astrophysics Data System (ADS)

Khaetskii, Alexander; Egues, J. Carlos

We have studied the edge spin accumulation due to an electric current in a high mobility two-dimensional electron gas formed in a symmetric well with two subbands. This study is strongly motivated by recent experiments which demonstrated the spin accumulation near the edges of a symmetric bilayer GaAs structure in contrast to no effect in a single-layer configuration. The intrinsic mechanism of the spin-orbit interaction we consider arises from the coupling between two subband states of opposite parities. Following the method developed in, we show that the presence of a gap in the system (i.e., the energy separation between the two subband bottoms) changes drastically the picture of the edge spin accumulation. We obtain a parametrically large magnitude of the edge spin density for a two-subband well as compared to the usual single-subband structure, and show that by changing the gap from zero up to 1 ÷2 K, the magnitude of the effect changes by three orders of magnitude. It opens up the possibility for the design of new interesting spintronic devices. We acknowledge financial support from FAPESP.

Evaluation of a numerical model's ability to predict bed load transport observed in braided river experiments

NASA Astrophysics Data System (ADS)

Javernick, Luke; Redolfi, Marco; Bertoldi, Walter

2018-05-01

New data collection techniques offer numerical modelers the ability to gather and utilize high quality data sets with high spatial and temporal resolution. Such data sets are currently needed for calibration, verification, and to fuel future model development, particularly morphological simulations. This study explores the use of high quality spatial and temporal data sets of observed bed load transport in braided river flume experiments to evaluate the ability of a two-dimensional model, Delft3D, to predict bed load transport. This study uses a fixed bed model configuration and examines the model's shear stress calculations, which are the foundation to predict the sediment fluxes necessary for morphological simulations. The evaluation is conducted for three flow rates, and model setup used highly accurate Structure-from-Motion (SfM) topography and discharge boundary conditions. The model was hydraulically calibrated using bed roughness, and performance was evaluated based on depth and inundation agreement. Model bed load performance was evaluated in terms of critical shear stress exceedance area compared to maps of observed bed mobility in a flume. Following the standard hydraulic calibration, bed load performance was tested for sensitivity to horizontal eddy viscosity parameterization and bed morphology updating. Simulations produced depth errors equal to the SfM inherent errors, inundation agreement of 77-85%, and critical shear stress exceedance in agreement with 49-68% of the observed active area. This study provides insight into the ability of physically based, two-dimensional simulations to accurately predict bed load as well as the effects of horizontal eddy viscosity and bed updating. Further, this study highlights how using high spatial and temporal data to capture the physical processes at work during flume experiments can help to improve morphological modeling.

Numerical viscosity and resolution of high-order weighted essentially nonoscillatory schemes for compressible flows with high Reynolds numbers.

PubMed

Zhang, Yong-Tao; Shi, Jing; Shu, Chi-Wang; Zhou, Ye

2003-10-01

A quantitative study is carried out in this paper to investigate the size of numerical viscosities and the resolution power of high-order weighted essentially nonoscillatory (WENO) schemes for solving one- and two-dimensional Navier-Stokes equations for compressible gas dynamics with high Reynolds numbers. A one-dimensional shock tube problem, a one-dimensional example with parameters motivated by supernova and laser experiments, and a two-dimensional Rayleigh-Taylor instability problem are used as numerical test problems. For the two-dimensional Rayleigh-Taylor instability problem, or similar problems with small-scale structures, the details of the small structures are determined by the physical viscosity (therefore, the Reynolds number) in the Navier-Stokes equations. Thus, to obtain faithful resolution to these small-scale structures, the numerical viscosity inherent in the scheme must be small enough so that the physical viscosity dominates. A careful mesh refinement study is performed to capture the threshold mesh for full resolution, for specific Reynolds numbers, when WENO schemes of different orders of accuracy are used. It is demonstrated that high-order WENO schemes are more CPU time efficient to reach the same resolution, both for the one-dimensional and two-dimensional test problems.

Magneto-transport study of top- and back-gated LaAlO{sub 3}/SrTiO{sub 3} heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, W., E-mail: W.Liu@unige.ch; Gariglio, S.; Fête, A.

2015-06-01

We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO{sub 3}/SrTiO{sub 3} heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by sweeping top and back gate voltages. Analyzing those changes with respect to the carrier density tuning, we observe that the back gate strongly modifies the electron mobility while the top gate mainly varies the carrier density. The evolution of the spin-orbit interaction is also followed as a function of top and back gating.

Water desorption from a confined biopolymer.

PubMed

Pradipkanti, L; Satapathy, Dillip K

2018-03-14

We study desorption of water from a confined biopolymer (chitosan thin films) by employing temperature dependent specular X-ray reflectivity and spectroscopic ellipsometry. The water desorption is found to occur via three distinct stages with significantly different desorption rates. The distinct rates of water desorption are attributed to the presence of different kinds of water with disparate mobilities inside the biopolymer film. We identify two characteristic temperatures (T c1 and T c2 ) at which the water desorption rate changes abruptly. Interestingly, the characteristic temperatures decrease with decreasing the film thickness. The thickness dependence of the characteristic temperature is interpreted in the context of a higher mobility of polymer chains at the free surface for polymers under one-dimensional confinement.

Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface states of topological insulator nanostructures

NASA Astrophysics Data System (ADS)

Sengupta, Parijat; Kubis, Tillmann; Tan, Yaohua; Klimeck, Gerhard

2015-01-01

Bi2Te3 and Bi2Se3 are well known 3D-topological insulators (TI). Films made of these materials exhibit metal-like surface states with a Dirac dispersion and possess high mobility. The high mobility metal-like surface states can serve as building blocks for a variety of applications that involve tuning their dispersion relationship and opening a band gap. A band gap can be opened either by breaking time reversal symmetry, the proximity effect of a superconductor or ferromagnet or adjusting the dimensionality of the TI material. In this work, methods that can be employed to easily open a band gap for the TI surface states are assessed. Two approaches are described: (1) Coating the surface states with a ferromagnet which has a controllable magnetization axis. The magnetization strength of the ferromagnet is incorporated as an exchange interaction term in the Hamiltonian. (2) An s-wave superconductor, because of the proximity effect, when coupled to a 3D-TI opens a band gap on the surface. Finally, the hybridization of the surface Dirac cones can be controlled by reducing the thickness of the topological insulator film. It is shown that this alters the band gap significantly.

A review of the quantum Hall effects in MgZnO/ZnO heterostructures

NASA Astrophysics Data System (ADS)

Falson, Joseph; Kawasaki, Masashi

2018-05-01

This review visits recent experimental efforts on high mobility two-dimensional electron systems (2DES) hosted at the Mg x Zn1-x O/ZnO heterointerface. We begin with the growth of these samples, and highlight the key characteristics of ozone-assisted molecular beam epitaxy required for their production. The transport characteristics of these structures are found to rival that of traditional semiconductor material systems, as signified by the high electron mobility (μ > 1000 000 cm2 Vs‑1) and rich quantum Hall features. Owing to a large effective mass and small dielectric constant, interaction effects are an order of magnitude stronger in comparison with the well studied GaAs-based 2DES. The strong correlation physics results in robust Fermi-liquid renormalization of the effective mass and spin susceptibility of carriers, which in turn dictates the parameter space for the quantum Hall effect. Finally, we explore the quantum Hall effect with a particular emphasis on the spin degree of freedom of carriers, and how their large spin splitting allows control of the ground states encountered at ultra-low temperatures within the fractional quantum Hall regime. We discuss in detail the physics of even-denominator fractional quantum Hall states, whose observation and underlying character remain elusive and exotic.

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

NASA Astrophysics Data System (ADS)

Bandurin, Denis A.; Tyurnina, Anastasia V.; Yu, Geliang L.; Mishchenko, Artem; Zólyomi, Viktor; Morozov, Sergey V.; Kumar, Roshan Krishna; Gorbachev, Roman V.; Kudrynskyi, Zakhar R.; Pezzini, Sergio; Kovalyuk, Zakhar D.; Zeitler, Uli; Novoselov, Konstantin S.; Patanè, Amalia; Eaves, Laurence; Grigorieva, Irina V.; Fal'Ko, Vladimir I.; Geim, Andre K.; Cao, Yang

2017-03-01

A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 103 cm2 V-1 s-1 and 104 cm2 V-1 s-1 at room and liquid-helium temperatures, respectively, allowing the observation of the fully developed quantum Hall effect. The conduction electrons occupy a single 2D subband and have a small effective mass. Photoluminescence spectroscopy reveals that the bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band-edge optical response vanishes in monolayer InSe, which is attributed to the monolayer's mirror-plane symmetry. Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically thin dichalcogenides and black phosphorus.

Two-dimensional B-C-O alloys: a promising class of 2D materials for electronic devices.

PubMed

Zhou, Si; Zhao, Jijun

2016-04-28

Graphene, a superior 2D material with high carrier mobility, has limited application in electronic devices due to zero band gap. In this regard, boron and nitrogen atoms have been integrated into the graphene lattice to fabricate 2D semiconducting heterostructures. It is an intriguing question whether oxygen can, as a replacement of nitrogen, enter the sp2 honeycomb lattice and form stable B-C-O monolayer structures. Here we explore the atomic structures, energetic and thermodynamic stability, and electronic properties of various 2D B-C-O alloys using first-principles calculations. Our results show that oxygen can be stably incorporated into the graphene lattice by bonding with boron. The B and O species favor forming alternate patterns into the chain- or ring-like structures embedded in the pristine graphene regions. These B-C-O hybrid sheets can be either metals or semiconductors depending on the B : O ratio. The semiconducting (B2O)nCm and (B6O3)nCm phases exist under the B- and O-rich conditions, and possess a tunable band gap of 1.0-3.8 eV and high carrier mobility, retaining ∼1000 cm2 V(-1) s(-1) even for half coverage of B and O atoms. These B-C-O alloys form a new class of 2D materials that are promising candidates for high-speed electronic devices.

Electronic transport in graphene-based heterostructures

NASA Astrophysics Data System (ADS)

Tan, J. Y.; Avsar, A.; Balakrishnan, J.; Koon, G. K. W.; Taychatanapat, T.; O'Farrell, E. C. T.; Watanabe, K.; Taniguchi, T.; Eda, G.; Castro Neto, A. H.; Özyilmaz, B.

2014-05-01

While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (2D) crystals influence the electronic performance of graphene. In this Letter, we study the surface morphology of 2D BN, gallium selenide (GaSe), and transition metal dichalcogenides (tungsten disulfide (WS2) and molybdenum disulfide (MoS2)) crystals and their influence on graphene's electronic quality. Atomic force microscopy analysis shows that these crystals have improved surface roughness (root mean square value of only ˜0.1 nm) compared to conventional SiO2 substrate. While our results confirm that graphene devices exhibit very high electronic mobility (μ) on BN substrates, graphene devices on WS2 substrates (G/WS2) are equally promising for high quality electronic transport (μ ˜ 38 000 cm2/V s at room temperature), followed by G/MoS2 (μ ˜ 10 000 cm2/V s) and G/GaSe (μ ˜ 2200 cm2/V s). However, we observe a significant asymmetry in electron and hole conduction in G/WS2 and G/MoS2 heterostructures, most likely due to the presence of sulphur vacancies in the substrate crystals. GaSe crystals are observed to degrade over time even under ambient conditions, leading to a large hysteresis in graphene transport making it a less suitable substrate.

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

PubMed

Li, Xuefei; Xiong, Xiong; Li, Tiaoyang; Li, Sichao; Zhang, Zhenfeng; Wu, Yanqing

2017-12-27

Because of their wide bandgap and ultrathin body properties, two-dimensional materials are currently being pursued for next-generation electronic and optoelectronic applications. Although there have been increasing numbers of studies on improving the performance of MoS 2 field-effect transistors (FETs) using various methods, the dielectric interface, which plays a decisive role in determining the mobility, interface traps, and thermal transport of MoS 2 FETs, has not been well explored and understood. In this article, we present a comprehensive experimental study on the effect of high-k dielectrics on the performance of few-layer MoS 2 FETs from 300 to 4.3 K. Results show that Al 2 O 3 /HfO 2 could boost the mobility and drain current. Meanwhile, MoS 2 transistors with Al 2 O 3 /HfO 2 demonstrate a 2× reduction in oxide trap density compared to that of the devices with the conventional SiO 2 substrate. Also, we observe a negative differential resistance effect on the device with 1 μm-channel length when using conventional SiO 2 as the gate dielectric due to self-heating, and this is effectively eliminated by using the Al 2 O 3 /HfO 2 gate dielectric. This dielectric engineering provides a highly viable route to realizing high-performance transition metal dichalcogenide-based FETs.

Electron Mobilities and Effective Masses in InGaAs/InAlAs HEMT Structures with High In Content

NASA Astrophysics Data System (ADS)

Yuzeeva, N. A.; Sorokoumova, A. V.; Lunin, R. A.; Oveshnikov, L. N.; Galiev, G. B.; Klimov, E. A.; Lavruchin, D. V.; Kulbachinskii, V. A.

2016-12-01

InxGa_{1-{x}}As/InyAl_{1-{y}}As HEMT structures {δ}-doped by Si were grown by molecular beam epitaxy on InP substrate. We investigated the influence of the In content on the electron mobilities and effective masses in dimensionally quantized subbands. The electron effective masses were determined by the temperature dependence of the amplitude of the Shubnikov-de Haas effect at 1.6 and 4.2 K. We found that the more the In content in quantum well (QW), the less the electron effective masses. The mobilities are higher in HEMT structures with wider and deeper QW. The energy band diagrams were calculated by using Vegard's law for basic parameters. The calculated band diagrams are in a good agreement with the experimental data of photoluminescence spectra.

Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.

PubMed

Sharma, N; Periasamy, C; Chaturvedi, N

2018-07-01

In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N/GaN and GaN/Al0.25Ga0.75N/GaN heterostructures deposited on sapphire substrates. The results of our analysis clearly indicate that expanding the GaN capping layer thickness from 1 nm to 100 nm prompts an increment in the electron concentration at hetero interface. As consequence of which drain current was additionally increments with GaN cap layer thicknesses, and eventually saturates at approximately 1.85 A/mm for capping layer thickness greater than 40 nm. Interestingly, for the same structure, the 2D-electron mobility, decrease monotonically with GaN capping layer thickness, and saturate at approximately 830 cm2/Vs for capping layer thickness greater than 50 nm. A device with a GaN cap layer didn't exhibit gate leakage current. Furthermore, it was observed that the carrier concentration was first decrease 1.03 × 1019/cm3 to 6.65 × 1018/cm3 with AlGaN Layer thickness from 5 to 10 nm and after that it increases with the AlGaN layer thickness from 10 to 30 nm. The same trend was followed for electric field distributions. Electron mobility decreases monotonically with AlGaN layer thickness. Highest electron mobility 1354 cm2/Vs were recorded for the AlGaN layer thickness of 5 nm. Results obtained are in good agreement with published experimental data.

Crystal Growth of Graphene Films and Graphene Nanoribbons via Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Jacobberger, Robert Michael

Graphene is a two-dimensional carbon allotrope that has exceptional properties, including high charge carrier mobility, thermal conductivity, mechanical strength, and flexibility. Graphene is a semimetal, prohibiting its use in semiconductor applications in which a bandgap is required. However, graphene can be transformed from a semimetal into a semiconductor if it is confined into one-dimensional nanoribbons narrower than 10 nm with well-defined armchair edges. In this work, we study the crystal growth of graphene via chemical vapor deposition (CVD), which is the most promising method to produce graphene films on the industrial scale. We explore the growth of isolated graphene crystals, continuous graphene films, and narrow graphene nanoribbons with armchair edges. We gain key insight into the critical growth parameters and mechanisms that influence the crystal morphology, orientation, defect density, and evolution, providing an empirical understanding of the diverse growth behaviors observed in literature. Using this knowledge, we synthesize graphene with remarkably low pinhole density and achieve high-quality graphene at 750 °C on Cu(111), which is over 250 °C lower than the temperature typically used to grow graphene on copper from methane. We also describe our breakthrough in graphene nanoribbon synthesis. Highly anisotropic nanoribbons are formed on Ge(001) if an exceptionally slow growth rate is used. The nanoribbons are self-defining with predominantly smooth armchair edges, are self-aligning, and have tunable width to < 10 nm. High-performance field-effect transistors incorporating these nanoribbons as channels display high conductance modulation > 10,000 and high conductance > 5 muS. This directional and anisotropic growth enables the fabrication of semiconducting nanoribbons directly on conventional semiconductor wafers and, thus, promises to allow the integration of nanoribbons into future hybrid integrated circuits. We additionally report our discovery that chemical patterns consisting of alternating stripes of graphene and germanium can direct the self-assembly of block copolymers into rationally-designed patterns with nanoscale features. Density multiplication of 10 is achieved and faster assembly kinetics are observed on graphene/germanium templates than on conventional chemical patterns based on polymer mats and brushes. This work opens the door for extensive assembly studies on chemical patterns based on two-dimensional materials.

Simple anisotropic three-dimensional quantum spin liquid with fractonlike topological order

NASA Astrophysics Data System (ADS)

Petrova, O.; Regnault, N.

2017-12-01

We present a three-dimensional cubic lattice spin model, anisotropic in the z ̂ direction, that exhibits fractonlike order. This order can be thought of as the result of interplay between two-dimensional Z2 topological order and spontaneous symmetry breaking along the z ̂ direction. Fracton order is a novel type of topological order characterized by the presence of immobile pointlike excitations, named fractons, residing at the corners of an operator with two-dimensional support. As other recent fracton models, ours exhibits a subextensive ground-state degeneracy: On an Lx×Ly×Lz three-torus, it has a 22 Lz topological degeneracy and an additional symmetry-breaking nontopological degeneracy equal to 2LxLy-2. The fractons can be combined into composite excitations that move either in a straight line along the z ̂ direction or freely in the x y plane at a given height z . While our model draws inspiration from the toric code, we demonstrate that it cannot be adiabatically connected to a layered toric code construction. Additionally, we investigate the effects of imposing open boundary conditions on our system. We find zero energy modes on the surfaces perpendicular to either the x ̂ or y ̂ directions and their absence on the surfaces normal to z ̂. This result can be explained using the properties of the two kinds of composite two-fracton mobile excitations.

Separation and characterization of allergic polymerized impurities in cephalosporins by 2D-HPSEC×LC-IT-TOF MS.

PubMed

Xu, Yu; Wang, DanDan; Tang, Lan; Wang, Jian

2017-10-25

Eleven unknown allergic impurities in cefodizime, cefmenoxime and cefonicid were separated and characterized by a trap-free two-dimensional high performance size exclusion chromatography (HPSEC) and reversed phase liquid chromatography (RP-HPLC) coupled to high resolution ion trap/time-of-flight mass spectrometry (2D-HPSEC×LC-IT-TOF MS) with positive and negative modes of electrospray ionization method. Separation and characterization the allergic polymerized impurities in β-lactam antibiotics were on the basis of column-switching technique which effectively combined the advantages of HPSEC and the ability of RP-HPLC to identify the special impurities. In the first dimension HPSEC, the column was Xtimate SEC-120 analytical column (7.8mm×30cm, 5μm), and the gradient elution used pH 7.0 buffer-acetonitrile as mobile phase And the second dimension analytical column was ZORBAX SB-C18 (4.6×150mm, 3.5μm) with ammonium formate solution (10mM) and ammonium formate (8mM) in [acetonitrile-water (4:1, v/v)] solution as mobile phase. Structures of eleven unknown impurities were deduced based on the high resolution MS n data with both positive and negative modes, in which nine impurities were polymerized impurities. The forming mechanism of β-lactam antibiotic polymerization in cephalosporins was also studied. The question on incompatibility between non-volatile salt mobile phase and mass spectrometry was solved completely by multidimensional heart-cutting approaches and online demineralization technique, which was worthy of widespread use and application for the advantages of stability and repeatability. Copyright © 2017. Published by Elsevier B.V.

Diverse carrier mobility of monolayer BNC x : a combined density functional theory and Boltzmann transport theory study.

PubMed

Wu, Tao; Deng, Kaiming; Deng, Weiqiao; Lu, Ruifeng

2017-10-19

BNC x monolayer as a kind of two-dimensional material has numerous chemical atomic ratios and arrangements with different electronic structures. Via calculations on the basis of density functional theory and Boltzmann transport theory under deformation potential approximation, the band structures and carrier mobilities of BNC x (x  =  1,2,3,4) nanosheets are systematically investigated. The calculated results show that BNC 2 -1 is a material with very small band gap (0.02 eV) among all the structures while other BNC x monolayers are semiconductors with band gap ranging from 0.51 eV to 1.32 eV. The carrier mobility of BNC x varies considerably from tens to millions of cm 2 V -1 s -1 . For BNC 2 -1, the hole mobility and electron mobility along both x and y directions can reach 10 5 orders of magnitude, which is similar to the carrier mobility of graphene. Besides, all studied BNC x monolayers obviously have anisotropic hole mobility and electron mobility. In particular, for semiconductor BNC 4 , its hole mobility along the y direction and electron mobility along the x direction unexpectedly reach 10 6 orders of magnitude, even higher than that of graphene. Our findings suggest that BNC x layered materials with the proper ratio and arrangement of carbon atoms will possess desirable charge transport properties, exhibiting potential applications in nanoelectronic devices.

Diverse carrier mobility of monolayer BNC x : a combined density functional theory and Boltzmann transport theory study

NASA Astrophysics Data System (ADS)

Wu, Tao; Deng, Kaiming; Deng, Weiqiao; Lu, Ruifeng

2017-11-01

BNC x monolayer as a kind of two-dimensional material has numerous chemical atomic ratios and arrangements with different electronic structures. Via calculations on the basis of density functional theory and Boltzmann transport theory under deformation potential approximation, the band structures and carrier mobilities of BNC x (x  =  1,2,3,4) nanosheets are systematically investigated. The calculated results show that BNC2-1 is a material with very small band gap (0.02 eV) among all the structures while other BNC x monolayers are semiconductors with band gap ranging from 0.51 eV to 1.32 eV. The carrier mobility of BNC x varies considerably from tens to millions of cm2 V-1 s-1. For BNC2-1, the hole mobility and electron mobility along both x and y directions can reach 105 orders of magnitude, which is similar to the carrier mobility of graphene. Besides, all studied BNC x monolayers obviously have anisotropic hole mobility and electron mobility. In particular, for semiconductor BNC4, its hole mobility along the y direction and electron mobility along the x direction unexpectedly reach 106 orders of magnitude, even higher than that of graphene. Our findings suggest that BNC x layered materials with the proper ratio and arrangement of carbon atoms will possess desirable charge transport properties, exhibiting potential applications in nanoelectronic devices.

High-Throughput Synthesis and Structure of Zeolite ZSM-43 with Two-Directional 8-Ring Channels.

PubMed

Willhammar, Tom; Su, Jie; Yun, Yifeng; Zou, Xiaodong; Afeworki, Mobae; Weston, Simon C; Vroman, Hilda B; Lonergan, William W; Strohmaier, Karl G

2017-08-07

The aluminosilicate zeolite ZSM-43 (where ZSM = Zeolite Socony Mobil) was first synthesized more than 3 decades ago, but its chemical structure remained unsolved because of its poor crystallinity and small crystal size. Here we present optimization of the ZSM-43 synthesis using a high-throughput approach and subsequent structure determination by the combination of electron crystallographic methods and powder X-ray diffraction. The synthesis required the use of a combination of both inorganic (Cs + and K + ) and organic (choline) structure-directing agents. High-throughput synthesis enabled a screening of the synthesis conditions, which made it possible to optimize the synthesis, despite its complexity, in order to obtain a material with significantly improved crystallinity. When both rotation electron diffraction and high-resolution transmission electron microscopy imaging techniques are applied, the structure of ZSM-43 could be determined. The structure of ZSM-43 is a new zeolite framework type and possesses a unique two-dimensional channel system limited by 8-ring channels. ZSM-43 is stable upon calcination, and sorption measurements show that the material is suitable for adsorption of carbon dioxide as well as methane.

Quantitation of triacylglycerols in edible oils by off-line comprehensive two-dimensional liquid chromatography-atmospheric pressure chemical ionization mass spectrometry using a single column.

PubMed

Wei, Fang; Hu, Na; Lv, Xin; Dong, Xu-Yan; Chen, Hong

2015-07-24

In this investigation, off-line comprehensive two-dimensional liquid chromatography-atmospheric pressure chemical ionization mass spectrometry using a single column has been applied for the identification and quantification of triacylglycerols in edible oils. A novel mixed-mode phenyl-hexyl chromatographic column was employed in this off-line two-dimensional separation system. The phenyl-hexyl column combined the features of traditional C18 and silver-ion columns, which could provide hydrophobic interactions with triacylglycerols under acetonitrile conditions and can offer π-π interactions with triacylglycerols under methanol conditions. When compared with traditional off-line comprehensive two-dimensional liquid chromatography employing two different chromatographic columns (C18 and silver-ion column) and using elution solvents comprised of two phases (reversed-phase/normal-phase) for triacylglycerols separation, the novel off-line comprehensive two-dimensional liquid chromatography using a single column can be achieved by simply altering the mobile phase between acetonitrile and methanol, which exhibited a much higher selectivity for the separation of triacylglycerols with great efficiency and rapid speed. In addition, an approach based on the use of response factor with atmospheric pressure chemical ionization mass spectrometry has been developed for triacylglycerols quantification. Due to the differences between saturated and unsaturated acyl chains, the use of response factors significantly improves the quantitation of triacylglycerols. This two-dimensional liquid chromatography-mass spectrometry system was successfully applied for the profiling of triacylglycerols in soybean oils, peanut oils and lord oils. A total of 68 triacylglycerols including 40 triacylglycerols in soybean oils, 50 triacylglycerols in peanut oils and 44 triacylglycerols in lord oils have been identified and quantified. The liquid chromatography-mass spectrometry data were analyzed using principal component analysis. The results of the principal component analysis enabled a clear identification of different plant oils. By using this two-dimensional liquid chromatography-mass spectrometry system coupled with principal component analysis, adulterated soybean oils with 5% added lord oil and peanut oils with 5% added soybean oil can be clearly identified. Copyright © 2015 Elsevier B.V. All rights reserved.

How Bilayer Graphene Got a Bandgap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng Wang

2009-06-02

Graphene is the two-dimensional crystalline form of carbon, whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But theres a catch: graphene has no bandgap. Now Feng Wang and his colleagues at Berkeley Lab and UC Berkeley have engineered a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 milli-electron volts, which is the energy of infrared radiation.

How Bilayer Graphene Got a Bandgap

ScienceCinema

Feng Wang

2017-12-09

Graphene is the two-dimensional crystalline form of carbon, whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But theres a catch: graphene has no bandgap. Now Feng Wang and his colleagues at Berkeley Lab and UC Berkeley have engineered a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 milli-electron volts, which is the energy of infrared radiation.

How Bilayer Graphene Got a Bandgap

ScienceCinema

Wang, Feng

2018-01-08

Graphene is the two-dimensional crystalline form of carbon, whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But theres a catch: graphene has no bandgap. Now Feng Wang and his colleagues at Berkeley Lab and UC Berkeley have engineered a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 milli-electron volts, which is the energy of infrared radiation.

Mobile Phone-Based Unobtrusive Ecological Momentary Assessment of Day-to-Day Mood: An Explorative Study.

PubMed

Asselbergs, Joost; Ruwaard, Jeroen; Ejdys, Michal; Schrader, Niels; Sijbrandij, Marit; Riper, Heleen

2016-03-29

Ecological momentary assessment (EMA) is a useful method to tap the dynamics of psychological and behavioral phenomena in real-world contexts. However, the response burden of (self-report) EMA limits its clinical utility. The aim was to explore mobile phone-based unobtrusive EMA, in which mobile phone usage logs are considered as proxy measures of clinically relevant user states and contexts. This was an uncontrolled explorative pilot study. Our study consisted of 6 weeks of EMA/unobtrusive EMA data collection in a Dutch student population (N=33), followed by a regression modeling analysis. Participants self-monitored their mood on their mobile phone (EMA) with a one-dimensional mood measure (1 to 10) and a two-dimensional circumplex measure (arousal/valence, -2 to 2). Meanwhile, with participants' consent, a mobile phone app unobtrusively collected (meta) data from six smartphone sensor logs (unobtrusive EMA: calls/short message service (SMS) text messages, screen time, application usage, accelerometer, and phone camera events). Through forward stepwise regression (FSR), we built personalized regression models from the unobtrusive EMA variables to predict day-to-day variation in EMA mood ratings. The predictive performance of these models (ie, cross-validated mean squared error and percentage of correct predictions) was compared to naive benchmark regression models (the mean model and a lag-2 history model). A total of 27 participants (81%) provided a mean 35.5 days (SD 3.8) of valid EMA/unobtrusive EMA data. The FSR models accurately predicted 55% to 76% of EMA mood scores. However, the predictive performance of these models was significantly inferior to that of naive benchmark models. Mobile phone-based unobtrusive EMA is a technically feasible and potentially powerful EMA variant. The method is young and positive findings may not replicate. At present, we do not recommend the application of FSR-based mood prediction in real-world clinical settings. Further psychometric studies and more advanced data mining techniques are needed to unlock unobtrusive EMA's true potential.

Quality Traceability System of Traditional Chinese Medicine Based on Two Dimensional Barcode Using Mobile Intelligent Technology

PubMed Central

Cai, Yong; Li, Xiwen; Wang, Runmiao; Yang, Qing; Li, Peng; Hu, Hao

2016-01-01

Currently, the chemical fingerprint comparison and analysis is mainly based on professional equipment and software, it’s expensive and inconvenient. This study aims to integrate QR (Quick Response) code with quality data and mobile intelligent technology to develop a convenient query terminal for tracing quality in the whole industrial chain of TCM (traditional Chinese medicine). Three herbal medicines were randomly selected and their chemical two-dimensional barcode (2D) barcodes fingerprints were constructed. Smartphone application (APP) based on Android system was developed to read initial data of 2D chemical barcodes, and compared multiple fingerprints from different batches of same species or different species. It was demonstrated that there were no significant differences between original and scanned TCM chemical fingerprints. Meanwhile, different TCM chemical fingerprint QR codes could be rendered in the same coordinate and showed the differences very intuitively. To be able to distinguish the variations of chemical fingerprint more directly, linear interpolation angle cosine similarity algorithm (LIACSA) was proposed to get similarity ratio. This study showed that QR codes can be used as an effective information carrier to transfer quality data. Smartphone application can rapidly read quality information in QR codes and convert data into TCM chemical fingerprints. PMID:27780256

Mobility of long-chain DNA in two-dimensional artificial gels

NASA Astrophysics Data System (ADS)

Turner, Stephen W. P.; Han, Jongyoon; Craighead, Harold G.

2000-03-01

In this study, a two-dimensional array of nanofabricated obstacles is used as an artificial gel to study the electrophoretic mobility dependence of DNA as a function of pore size, molecule length and electric field. Limitations in feature size have prevented previous studies from testing the crossover from the separating to the non-separating regime predicted by the biased reptation model of Lumpkin, Dejardin and Zimm[1] and the modified model of Duke, Semenov and Viovy.[2] That limitation is overcome in this work with the use of electron beam lithography to define features as small as 30 nm. Attainment of these feature sizes was made possible by the use of a sacrificial-layer-based technique for fluidics fabrication.[3] A novel band-launching strategy is used to provide band separation data for the first time in this system. Molecule lengths between 5 and 150 kilobases are studied for electric field strengths from 0.1 to 20 Volts per meter. [1] O. Lumpkin, P. Dejardin and B. Zimm, Biopolymers, Vol. 24, 1573-1593 (1985) [2] T. Duke, A. Semenov and J. Viovy, Phys. Rev. Lett. Vol. 69, No. 22, 3260-3263 (1992) [3] S. Turner, A. Perez, A. Lopez, and H. Craighead, J. Vac. Sci. Technol. B 16(6) 3835-3840 (1998)

Construction of high-dimensional universal quantum logic gates using a Λ system coupled with a whispering-gallery-mode microresonator.

PubMed

He, Ling Yan; Wang, Tie-Jun; Wang, Chuan

2016-07-11

High-dimensional quantum system provides a higher capacity of quantum channel, which exhibits potential applications in quantum information processing. However, high-dimensional universal quantum logic gates is difficult to achieve directly with only high-dimensional interaction between two quantum systems and requires a large number of two-dimensional gates to build even a small high-dimensional quantum circuits. In this paper, we propose a scheme to implement a general controlled-flip (CF) gate where the high-dimensional single photon serve as the target qudit and stationary qubits work as the control logic qudit, by employing a three-level Λ-type system coupled with a whispering-gallery-mode microresonator. In our scheme, the required number of interaction times between the photon and solid state system reduce greatly compared with the traditional method which decomposes the high-dimensional Hilbert space into 2-dimensional quantum space, and it is on a shorter temporal scale for the experimental realization. Moreover, we discuss the performance and feasibility of our hybrid CF gate, concluding that it can be easily extended to a 2n-dimensional case and it is feasible with current technology.

Mobile phase effects on the retention on polar columns with special attention to the dual hydrophilic interaction-reversed-phase liquid chromatography mechanism, a review.

PubMed

Jandera, Pavel; Hájek, Tomáš

2018-01-01

Hydrophilic interaction liquid chromatography on polar columns in aqueous-organic mobile phases has become increasingly popular for the separation of many biologically important compounds in chemical, environmental, food, toxicological, and other samples. In spite of many new applications appearing in literature, the retention mechanism is still controversial. This review addresses recent progress in understanding of the retention models in hydrophilic interaction liquid chromatography. The main attention is focused on the role of water, both adsorbed by the column and contained in the bulk mobile phase. Further, the theoretical retention models in the isocratic and gradient elution modes are discussed. The dual hydrophilic interaction liquid chromatography reversed-phase retention mechanism on polar columns is treated in detail, especially with respect to the practical use in one- and two-dimensional liquid chromatography separations. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Research on online 3D laser scanner dimensional measurement system for heavy high-temperature forgings

NASA Astrophysics Data System (ADS)

Zhu, Jingguo; Li, Menglin; Jiang, Yan; Xie, Tianpeng; Li, Feng; Jiang, Chenghao; Liu, Ruqing; Meng, Zhe

2017-10-01

Online 3-D laser-scanner is a non-contact measurement system with high speed, high precision and easy operation, which can be used to measure heavy and high-temperature forgings. But the current online laser measurement system is mainly a mobile light indicator, which can only be used in the limited environment and lacks the capability of 3-D accurate measurement. This paper mainly introduces the structure of the online high-speed real-time 3-D measurement for heavy high-temperature forgings of Academy of Opto-Electronics (AOE), Chinese Academy of Sciences. Combining TOF pulse distance measurement with hybrid scan mode, the system can scan and acquire point cloud data of an area of 20m×10m with a 75°×40° field of view at the distance of 20m. The entire scanning time is less than 5 seconds with an accuracy of 8mm, which can meet the online dimensional measurement requirements of heavy high-temperature forgings.

The Reliability of a Novel Mobile 3-dimensional Wound Measurement Device.

PubMed

Anghel, Ersilia L; Kumar, Anagha; Bigham, Thomas E; Maselli, Kathryn M; Steinberg, John S; Evans, Karen K; Kim, Paul J; Attinger, Christopher E

2016-11-01

Objective assessment of wound dimensions is essential for tracking progression and determining treatment effectiveness. A reliability study was designed to establish intrarater and interrater reliability of a novel mobile 3-dimensional wound measurement (3DWM) device. Forty-five wounds were assessed by 2 raters using a 3DWM device to obtain length, width, area, depth, and volume measurements. Wounds were also measured manually, using a disposable ruler and digital planimetry. The intraclass correlation coefficient (ICC) was used to establish intrarater and interrater reliability. High levels of intrarater and interrater agreement were observed for area, length, and width; ICC = 0.998, 0.977, 0.955 and 0.999, 0.997, 0.995, respectively. Moderate levels of intrarater (ICC = 0.888) and interrater (ICC = 0.696) agreement were observed for volume. Lastly, depth yielded an intrarater ICC of 0.360 and an interrater ICC of 0.649. Measures from the 3DWM device were highly correlated with those obtained from scaled photography for length, width, and area (ρ = 0.997, 0.988, 0.997, P < 0.001). The 3DWM device yielded correlations of ρ = 0.990, 0.987, 0.996 with P < 0.001 for length, width, and area when compared to manual measurements. The 3DWM device was found to be highly reliable for measuring wound areas for a range of wound sizes and types as compared to manual measurement and digital planimetry. The depth and therefore volume measurement using the 3DWM device was found to have a lower ICC, but volume ICC alone was moderate. Overall, this device offers a mobile option for objective wound measurement in the clinical setting.

How to regulate energy levels and hole mobility of spiro-type hole transport materials in perovskite solar cells.

PubMed

Chi, Wei-Jie; Sun, Ping-Ping; Li, Ze-Sheng

2016-10-21

Methoxyaniline-based organic small molecules with three-dimensional structure have been proven as the most promising hole conductor for state-of-the-art perovskite devices. A fundamental understanding of the electronic properties and hole transport behavior of spiro-CPDT analogues, which is dependent on the number and position of the -OCH 3 groups, is significant for their potential applications as hole transport materials of perovskite solar cells. Our results from density functional theory calculations indicate that meta-substitution is more beneficial to reduce the highest occupied molecular orbital (HOMO) levels of molecules compared with ortho- and para-substitution. Furthermore, the hole mobility can be improved by ortho-substitution or mixed ortho- and para-substitution. Most interestingly, it is found that the improvement in hole mobility is at the expense of raising the HOMO level of spiro-CPDT analogues. These results can be useful in the process of designing and synthesizing excellent hole transport materials with suitable HOMO levels and high hole mobility.

Mobility of multiwalled carbon nanotubes in porous media.

PubMed

Liu, Xueying; O'Carroll, Denis M; Petersen, Elijah J; Huang, Qingguo; Anderson, C Lindsay

2009-11-01

Engineered multiwalled carbon nanotubes (MWCNTs) are the subject of intense research and are expected to gain widespread usage in a broad variety of commercial products. However, concerns have been raised regarding potential environmental and human health risks. The mobility of MWCNTs in porous media is examined in this study using one-dimensional flow-through column experiments under conditions representative of subsurface and drinking water treatment systems. Results demonstrate that pore water velocity strongly influenced MWCNT transport, with high MWCNT mobility at pore water velocities greater than 4.0 m/d. A numerical simulator, which incorporated a newly developed theoretical collector efficiency relationship for MWCNTs in spherical porous media, was developed to model observed column results. The model, which incorporated traditional colloid filtration theory in conjunction with a site-blocking term, yielded good agreement with observed results in quartz sand-packed column experiments. Experiments were also conducted in glass bead-packed columns with the same mean grain size as the quartz sand-packed columns. MWCNTs were more mobile in the glass bead-packed columns.

Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

PubMed

Lee, Gwan-Hyoung; Cui, Xu; Kim, Young Duck; Arefe, Ghidewon; Zhang, Xian; Lee, Chul-Ho; Ye, Fan; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip; Hone, James

2015-07-28

Emerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. However, 2D materials are by nature sensitive to environmental influences, such as temperature, humidity, adsorbates, and trapped charges in neighboring dielectrics. Therefore, it is crucial to develop device architectures that provide both high performance and long-term stability. Here we report high performance of dual-gated van der Waals (vdW) heterostructure devices in which MoS2 layers are fully encapsulated by hexagonal boron nitride (hBN) and contacts are formed using graphene. The hBN-encapsulation provides excellent protection from environmental factors, resulting in highly stable device performance, even at elevated temperatures. Our measurements also reveal high-quality electrical contacts and reduced hysteresis, leading to high two-terminal carrier mobility (33-151 cm(2) V(-1) s(-1)) and low subthreshold swing (80 mV/dec) at room temperature. Furthermore, adjustment of graphene Fermi level and use of dual gates enable us to separately control contact resistance and threshold voltage. This novel vdW heterostructure device opens up a new way toward fabrication of stable, high-performance devices based on 2D materials.

Using Mobile Laser Scanning Data for Features Extraction of High Accuracy Driving Maps

NASA Astrophysics Data System (ADS)

Yang, Bisheng; Liu, Yuan; Liang, Fuxun; Dong, Zhen

2016-06-01

High Accuracy Driving Maps (HADMs) are the core component of Intelligent Drive Assistant Systems (IDAS), which can effectively reduce the traffic accidents due to human error and provide more comfortable driving experiences. Vehicle-based mobile laser scanning (MLS) systems provide an efficient solution to rapidly capture three-dimensional (3D) point clouds of road environments with high flexibility and precision. This paper proposes a novel method to extract road features (e.g., road surfaces, road boundaries, road markings, buildings, guardrails, street lamps, traffic signs, roadside-trees, power lines, vehicles and so on) for HADMs in highway environment. Quantitative evaluations show that the proposed algorithm attains an average precision and recall in terms of 90.6% and 91.2% in extracting road features. Results demonstrate the efficiencies and feasibilities of the proposed method for extraction of road features for HADMs.

Characterization technique for detection of atom-size crystalline defects and strains using two-dimensional fast-Fourier-transform sampling Moiré method

NASA Astrophysics Data System (ADS)

Kodera, Masako; Wang, Qinghua; Ri, Shien; Tsuda, Hiroshi; Yoshioka, Akira; Sugiyama, Toru; Hamamoto, Takeshi; Miyashita, Naoto

2018-04-01

Recently, we have developed a two-dimensional (2D) fast-Fourier-transform (FFT) sampling Moiré technique to visually and quantitatively determine the locations of minute defects in a transmission electron microscopy (TEM) image. We applied this technique for defect detection with GaN high electron mobility transistor (HEMT) devices, and successfully and clearly visualized atom-size defects in AlGaN/GaN crystalline structures. The defect density obtained in the AlGaN/GaN structures is ∼1013 counts/cm2. In addition, we have successfully confirmed that the distribution and number of defects closely depend on the process conditions. Thus, this technique is quite useful for a device development. Moreover, the strain fields in an AlGaN/GaN crystal were effectively calculated with nm-scale resolution using this method. We also demonstrated that this sampling Moiré technique is applicable to silicon devices, which have principal directions different from those of AlGaN/GaN crystals. As a result, we believe that the 2D FFT sampling Moiré method has great potential applications to the discovery of new as yet unknown phenomena occurring between the characteristics of a crystalline material and device performance.

Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics.

PubMed

Yu, Lili; El-Damak, Dina; Radhakrishna, Ujwal; Ling, Xi; Zubair, Ahmad; Lin, Yuxuan; Zhang, Yuhao; Chuang, Meng-Hsi; Lee, Yi-Hsien; Antoniadis, Dimitri; Kong, Jing; Chandrakasan, Anantha; Palacios, Tomas

2016-10-12

Two-dimensional electronics based on single-layer (SL) MoS 2 offers significant advantages for realizing large-scale flexible systems owing to its ultrathin nature, good transport properties, and stable crystalline structure. In this work, we utilize a gate first process technology for the fabrication of highly uniform enhancement mode FETs with large mobility and excellent subthreshold swing. To enable large-scale MoS 2 circuit, we also develop Verilog-A compact models that accurately predict the performance of the fabricated MoS 2 FETs as well as a parametrized layout cell for the FET to facilitate the design and layout process using computer-aided design (CAD) tools. Using this CAD flow, we designed combinational logic gates and sequential circuits (AND, OR, NAND, NOR, XNOR, latch, edge-triggered register) as well as switched capacitor dc-dc converter, which were then fabricated using the proposed flow showing excellent performance. The fabricated integrated circuits constitute the basis of a standard cell digital library that is crucial for electronic circuit design using hardware description languages. The proposed design flow provides a platform for the co-optimization of the device fabrication technology and circuits design for future ubiquitous flexible and transparent electronics using two-dimensional materials.

Effective mass in bilayer graphene at low carrier densities: The role of potential disorder and electron-electron interaction

NASA Astrophysics Data System (ADS)

Li, J.; Tan, L. Z.; Zou, K.; Stabile, A. A.; Seiwell, D. J.; Watanabe, K.; Taniguchi, T.; Louie, Steven G.; Zhu, J.

2016-10-01

In a two-dimensional electron gas, the electron-electron interaction generally becomes stronger at lower carrier densities and renormalizes the Fermi-liquid parameters, such as the effective mass of carriers. We combine experiment and theory to study the effective masses of electrons and holes me* and mh* in bilayer graphene in the low carrier density regime on the order of 1 ×1011c m-2 . Measurements use temperature-dependent low-field Shubnikov-de Haas oscillations observed in high-mobility hexagonal boron nitride supported samples. We find that while me* follows a tight-binding description in the whole density range, mh* starts to drop rapidly below the tight-binding description at a carrier density of n =6 ×1011c m-2 and exhibits a strong suppression of 30% when n reaches 2 ×1011c m-2 . Contributions from the electron-electron interaction alone, evaluated using several different approximations, cannot explain the experimental trend. Instead, the effect of the potential fluctuation and the resulting electron-hole puddles play a crucial role. Calculations including both the electron-electron interaction and disorder effects explain the experimental data qualitatively and quantitatively. This Rapid Communication reveals an unusual disorder effect unique to two-dimensional semimetallic systems.

Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials.

PubMed

Park, Hamin; Shin, Gwang Hyuk; Lee, Khang June; Choi, Sung-Yool

2018-05-29

Hexagonal boron nitride (h-BN) is considered an ideal template for electronics based on two-dimensional (2D) materials, owing to its unique properties as a dielectric film. Most studies involving h-BN and its application to electronics have focused on its synthesis using techniques such as chemical vapor deposition, the electrical analysis of its surface state, and the evaluation of its performance. Meanwhile, processing techniques including etching methods have not been widely studied despite their necessity for device fabrication processes. In this study, we propose the atomic-scale etching of h-BN for integration into devices based on 2D materials, using Ar plasma at room temperature. A controllable etching rate, less than 1 nm min-1, was achieved and the low reactivity of the Ar plasma enabled the atomic-scale etching of h-BN down to a monolayer in this top-down approach. Based on the h-BN etching technique for achieving electrical contact with the underlying molybdenum disulfide (MoS2) layer of an h-BN/MoS2 heterostructure, a top-gate MoS2 field-effect transistor (FET) with h-BN gate dielectric was fabricated and characterized by high electrical performance based on the on/off current ratio and carrier mobility.