Self-aligned photolithography for the fabrication of fully transparent high-voltage devices

NASA Astrophysics Data System (ADS)

Zhang, Yonghui; Mei, Zengxia; Huo, Wenxing; Wang, Tao; Liang, Huili; Du, Xiaolong

2018-05-01

High-voltage devices, working in the range of hundreds of volts, are indispensable elements in the driving or readout circuits for various kinds of displays, integrated microelectromechanical systems and x-ray imaging sensors. However, the device performances are found hardly uniform or repeatable due to the misalignment issue, which are extremely common for offset drain high-voltage devices. To resolve this issue, this article reports a set of self-aligned photolithography technology for the fabrication of high-voltage devices. High-performance fully-transparent high-voltage thin film transistors, diodes and logic inverters are successfully fabricated with this technology. Unlike other self-aligned routes, opaque masks are introduced on the backside of the transparent substrate to facilitate proximity exposure method. The photolithography process is simulated and analyzed with technology computer aided design simulation to explain the working principle of the proximity exposure method. The substrate thickness is found to be vital for the implementation of this technology based on both simulation and experimental results. The electrical performance of high-voltage devices is dependent on the offset length, which can be delicately modulated by changing the exposure dose. The presented self-aligned photolithography technology is proved to be feasible in high-voltage circuits, demonstrating its huge potential in practical industrial applications.

76 FR 71982 - Advancing Regulatory Science for Highly Multiplexed Microbiology/Medical Countermeasure Devices...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-11-21

...] Advancing Regulatory Science for Highly Multiplexed Microbiology/ Medical Countermeasure Devices; Public... Multiplexed Microbiology/ Medical Countermeasure Devices'' that published in the Federal Register of August 8... the October 13, 2011, meeting, including the performance evaluation of highly multiplexed microbiology...

Room temperature infrared imaging sensors based on highly purified semiconducting carbon nanotubes.

PubMed

Liu, Yang; Wei, Nan; Zhao, Qingliang; Zhang, Dehui; Wang, Sheng; Peng, Lian-Mao

2015-04-21

High performance infrared (IR) imaging systems usually require expensive cooling systems, which are highly undesirable. Here we report the fabrication and performance characteristics of room temperature carbon nanotube (CNT) IR imaging sensors. The CNT IR imaging sensor is based on aligned semiconducting CNT films with 99% purity, and each pixel or device of the imaging sensor consists of aligned strips of CNT asymmetrically contacted by Sc and Pd. We found that the performance of the device is dependent on the CNT channel length. While short channel devices provide a large photocurrent and a rapid response of about 110 μs, long channel length devices exhibit a low dark current and a high signal-to-noise ratio which are critical for obtaining high detectivity. In total, 36 CNT IR imagers are constructed on a single chip, each consists of 3 × 3 pixel arrays. The demonstrated advantages of constructing a high performance IR system using purified semiconducting CNT aligned films include, among other things, fast response, excellent stability and uniformity, ideal linear photocurrent response, high imaging polarization sensitivity and low power consumption.

Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

PubMed

Lee, Gwan-Hyoung; Cui, Xu; Kim, Young Duck; Arefe, Ghidewon; Zhang, Xian; Lee, Chul-Ho; Ye, Fan; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip; Hone, James

2015-07-28

Emerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. However, 2D materials are by nature sensitive to environmental influences, such as temperature, humidity, adsorbates, and trapped charges in neighboring dielectrics. Therefore, it is crucial to develop device architectures that provide both high performance and long-term stability. Here we report high performance of dual-gated van der Waals (vdW) heterostructure devices in which MoS2 layers are fully encapsulated by hexagonal boron nitride (hBN) and contacts are formed using graphene. The hBN-encapsulation provides excellent protection from environmental factors, resulting in highly stable device performance, even at elevated temperatures. Our measurements also reveal high-quality electrical contacts and reduced hysteresis, leading to high two-terminal carrier mobility (33-151 cm(2) V(-1) s(-1)) and low subthreshold swing (80 mV/dec) at room temperature. Furthermore, adjustment of graphene Fermi level and use of dual gates enable us to separately control contact resistance and threshold voltage. This novel vdW heterostructure device opens up a new way toward fabrication of stable, high-performance devices based on 2D materials.

Visualizing staggered fields and analyzing electromagnetic data with PerceptEM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shasharina, Svetlana

This project resulted in VSimSP: a software for simulating large photonic devices of high-performance computers. It includes: GUI for Photonics Simulations; High-Performance Meshing Algorithm; 2d Order Multimaterials Algorithm; Mode Solver for Waveguides; 2d Order Material Dispersion Algorithm; S Parameters Calculation; High-Performance Workflow at NERSC ; and Large Photonic Devices Simulation Setups We believe we became the only company in the world which can simulate large photonics devices in 3D on modern supercomputers without the need to split them into subparts or do low-fidelity modeling. We started commercial engagement with a manufacturing company.

To twist, roll, stroke or poke? A study of input devices for menu navigation in the cockpit.

PubMed

Stanton, Neville A; Harvey, Catherine; Plant, Katherine L; Bolton, Luke

2013-01-01

Modern interfaces within the aircraft cockpit integrate many flight management system (FMS) functions into a single system. The success of a user's interaction with an interface depends upon the optimisation between the input device, tasks and environment within which the system is used. In this study, four input devices were evaluated using a range of Human Factors methods, in order to assess aspects of usability including task interaction times, error rates, workload, subjective usability and physical discomfort. The performance of the four input devices was compared using a holistic approach and the findings showed that no single input device produced consistently high performance scores across all of the variables evaluated. The touch screen produced the highest number of 'best' scores; however, discomfort ratings for this device were high, suggesting that it is not an ideal solution as both physical and cognitive aspects of performance must be accounted for in design. This study evaluated four input devices for control of a screen-based flight management system. A holistic approach was used to evaluate both cognitive and physical performance. Performance varied across the dependent variables and between the devices; however, the touch screen produced the largest number of 'best' scores.

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Sohn, Jung Inn; Cha, Seung Nam; Whang, Dongmok; Kim, Jong Min; Kang, Dae Joon

2014-05-21

We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.

High performance quantum cascade lasers: Loss, beam stability, and gain engineering

NASA Astrophysics Data System (ADS)

Bouzi, Pierre Michel

Quantum Cascade (QC) lasers are semiconductor devices emitting in the mid-infrared (3-30 micron) and terahertz (30-300 micron) regions of the electromagnetic spectrum. Since their first demonstration by Jerome Faist et. al. in 1994, they have evolved very quickly into high performance devices and given rise to many applications such as trace-gas sensing, medical diagnosis, free-space communication, and light detection and ranging (LIDAR). In this thesis, we investigate a further increase of the performance of QC devices and, through meticulous device modeling and characterizations, gain a deeper understanding of several of their unique characteristics, especially their carrier transport and lifetime, their characteristic temperature, their waveguide loss and modal gain, their leakage current, and their transverse mode profile. First, in our quest to achieve higher performance, we investigate the effect of growth asymmetries on device transport characteristics. This investigation stems from recent studies on the role of interface roughness on intersubband scattering and device performance. Through a symmetric active core design, we find that interface roughness and ionized impurity scattering induced by dopant migration play a significant role in carrier transport through the device. Understanding how interface roughness affects intersubband scattering, in turn, we engineer the gain in QC devices by placing monolayer barriers at specific locations within the device band structure. These strategically placed additional thin barrier layers introduce roughness scattering into the device active region, thereby selectively decreasing the lower laser state lifetime and increasing population inversion necessary for laser action. Preliminary measurement results from modified devices reveal a 50% decrease in the emission broadening compared to the control structures, which should lead to a two-fold increase in gain. A special class of so-called "strong coupling" QC lasers recently emerged with high optical power and high efficiency at cryogenic temperatures. However their performances decay rather rapidly with temperature in both pulsed and continuous wave modes. Through detailed measurements and analysis, we investigate several possible causes of this shortcoming and propose design modifications for temperature performance improvement. While the strong coupling devices are efficient and powerful, their performance often suffers from unintentional and potentially harmful beam steering at high power. Here, we identify the root of this pointing instability to be from non-linear interactions between multiple transverse modes. And, to resolve this issue, we employ focused ion beam (FIB) milling to etch small lateral constrictions on top of the devices and fill them with metal. This has the effect of greatly reducing the intensity of higher order transverse modes as they propagate through the cavity. A good grasp of the microscopic details involved in QC device operations will result in better lasers, with high beam quality. This, in turn, will enable new applications, such as the detection of SO2 isotopologues near 7.4 micron, which is of particular importance for the study of ultraviolet photolysis and the sulfur cycle on Venus.

Few-layered Ni(OH)2 nanosheets for high-performance supercapacitors

NASA Astrophysics Data System (ADS)

Sun, Wenping; Rui, Xianhong; Ulaganathan, Mani; Madhavi, Srinivasan; Yan, Qingyu

2015-11-01

Few-layered Ni(OH)2 nanosheets (4-5 nm in thickness) are synthesized towards high-performance supercapacitors. The ultrathin Ni(OH)2 nanosheets show high specific capacitance and good rate capability in both three-electrode and asymmetric devices. In the three-electrode device, the Ni(OH)2 nanosheets deliver a high capacitance of 2064 F g-1 at 2 A g-1, and the capacitance still has a retention of 1837 F g-1 at a high current density of 20 A g-1. Such excellent performance is by far one of the best for Ni(OH)2 electrodes. In the two-electrode asymmetric device, the specific capacitance is 248 F g-1 at 1 A g-1, and reaches 113 F g-1 at 20 A g-1. The capacitance of the asymmetric device maintains to be 166 F g-1 during the 4000th cycle at 2 A g-1, suggesting good cycling stability of the device. Besides, the asymmetric device exhibits gravimetric energy density of 22 Wh kg-1 at a power density of 0.8 kW kg-1. The present results demonstrate that the ultrathin Ni(OH)2 nanosheets are highly attractive electrode materials for achieving fast charging/discharging and high-capacity supercapacitors.

High Performance Graphene Nano-ribbon Thermoelectric Devices by Incorporation and Dimensional Tuning of Nanopores

PubMed Central

Sharafat Hossain, Md; Al-Dirini, Feras; Hossain, Faruque M.; Skafidas, Efstratios

2015-01-01

Thermoelectric properties of Graphene nano-ribbons (GNRs) with nanopores (NPs) are explored for a range of pore dimensions in order to achieve a high performance two-dimensional nano-scale thermoelectric device. We reduce thermal conductivity of GNRs by introducing pores in them in order to enhance their thermoelectric performance. The electrical properties (Seebeck coefficient and conductivity) of the device usually degrade with pore inclusion; however, we tune the pore to its optimal dimension in order to minimize this degradation, enhancing the overall thermoelectric performance (high ZT value) of our device. We observe that the side channel width plays an important role to achieve optimal performance while the effect of pore length is less pronounced. This result is consistent with the fact that electronic conduction in GNRs is dominated along its edges. Ballistic transport regime is assumed and a semi-empirical method using Huckel basis set is used to obtain the electrical properties, while the phononic system is characterized by Tersoff empirical potential model. The proposed device structure has potential applications as a nanoscale local cooler and as a thermoelectric power generator. PMID:26083450

High Performance Graphene Nano-ribbon Thermoelectric Devices by Incorporation and Dimensional Tuning of Nanopores.

PubMed

Hossain, Md Sharafat; Al-Dirini, Feras; Hossain, Faruque M; Skafidas, Efstratios

2015-06-17

Thermoelectric properties of Graphene nano-ribbons (GNRs) with nanopores (NPs) are explored for a range of pore dimensions in order to achieve a high performance two-dimensional nano-scale thermoelectric device. We reduce thermal conductivity of GNRs by introducing pores in them in order to enhance their thermoelectric performance. The electrical properties (Seebeck coefficient and conductivity) of the device usually degrade with pore inclusion; however, we tune the pore to its optimal dimension in order to minimize this degradation, enhancing the overall thermoelectric performance (high ZT value) of our device. We observe that the side channel width plays an important role to achieve optimal performance while the effect of pore length is less pronounced. This result is consistent with the fact that electronic conduction in GNRs is dominated along its edges. Ballistic transport regime is assumed and a semi-empirical method using Huckel basis set is used to obtain the electrical properties, while the phononic system is characterized by Tersoff empirical potential model. The proposed device structure has potential applications as a nanoscale local cooler and as a thermoelectric power generator.

SAME4HPC: A Promising Approach in Building a Scalable and Mobile Environment for High-Performance Computing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Karthik, Rajasekar

2014-01-01

In this paper, an architecture for building Scalable And Mobile Environment For High-Performance Computing with spatial capabilities called SAME4HPC is described using cutting-edge technologies and standards such as Node.js, HTML5, ECMAScript 6, and PostgreSQL 9.4. Mobile devices are increasingly becoming powerful enough to run high-performance apps. At the same time, there exist a significant number of low-end and older devices that rely heavily on the server or the cloud infrastructure to do the heavy lifting. Our architecture aims to support both of these types of devices to provide high-performance and rich user experience. A cloud infrastructure consisting of OpenStack withmore » Ubuntu, GeoServer, and high-performance JavaScript frameworks are some of the key open-source and industry standard practices that has been adopted in this architecture.« less

Density of states-based design of metal oxide thin-film transistors for high mobility and superior photostability.

PubMed

Kim, Hyun-Suk; Park, Joon Seok; Jeong, Hyun-Kwang; Son, Kyoung Seok; Kim, Tae Sang; Seon, Jong-Baek; Lee, Eunha; Chung, Jae Gwan; Kim, Dae Hwan; Ryu, Myungkwan; Lee, Sang Yoon

2012-10-24

A novel method to design metal oxide thin-film transistor (TFT) devices with high performance and high photostability for next-generation flat-panel displays is reported. Here, we developed bilayer metal oxide TFTs, where the front channel consists of indium-zinc-oxide (IZO) and the back channel material on top of it is hafnium-indium-zinc-oxide (HIZO). Density-of-states (DOS)-based modeling and device simulation were performed in order to determine the optimum thickness ratio within the IZO/HIZO stack that results in the best balance between device performance and stability. As a result, respective values of 5 and 40 nm for the IZO and HIZO layers were determined. The TFT devices that were fabricated accordingly exhibited mobility values up to 48 cm(2)/(V s), which is much elevated compared to pure HIZO TFTs (∼13 cm(2)/(V s)) but comparable to pure IZO TFTs (∼59 cm(2)/(V s)). Also, the stability of the bilayer device (-1.18 V) was significantly enhanced compared to the pure IZO device (-9.08 V). Our methodology based on the subgap DOS model and simulation provides an effective way to enhance the device stability while retaining a relatively high mobility, which makes the corresponding devices suitable for ultradefinition, large-area, and high-frame-rate display applications.

Planar junctionless phototransistor: A potential high-performance and low-cost device for optical-communications

NASA Astrophysics Data System (ADS)

Ferhati, H.; Djeffal, F.

2017-12-01

In this paper, a new junctionless optical controlled field effect transistor (JL-OCFET) and its comprehensive theoretical model is proposed to achieve high optical performance and low cost fabrication process. Exhaustive study of the device characteristics and comparison between the proposed junctionless design and the conventional inversion mode structure (IM-OCFET) for similar dimensions are performed. Our investigation reveals that the proposed design exhibits an outstanding capability to be an alternative to the IM-OCFET due to the high performance and the weak signal detection benefit offered by this design. Moreover, the developed analytical expressions are exploited to formulate the objective functions to optimize the device performance using Genetic Algorithms (GAs) approach. The optimized JL-OCFET not only demonstrates good performance in terms of derived drain current and responsivity, but also exhibits superior signal to noise ratio, low power consumption, high-sensitivity, high ION/IOFF ratio and high-detectivity as compared to the conventional IM-OCFET counterpart. These characteristics make the optimized JL-OCFET potentially suitable for developing low cost and ultrasensitive photodetectors for high-performance and low cost inter-chips data communication applications.

High-efficiency robust perovskite solar cells on ultrathin flexible substrates

PubMed Central

Li, Yaowen; Meng, Lei; Yang, Yang (Michael); Xu, Guiying; Hong, Ziruo; Chen, Qi; You, Jingbi; Li, Gang; Yang, Yang; Li, Yongfang

2016-01-01

Wide applications of personal consumer electronics have triggered tremendous need for portable power sources featuring light-weight and mechanical flexibility. Perovskite solar cells offer a compelling combination of low-cost and high device performance. Here we demonstrate high-performance planar heterojunction perovskite solar cells constructed on highly flexible and ultrathin silver-mesh/conducting polymer substrates. The device performance is comparable to that of their counterparts on rigid glass/indium tin oxide substrates, reaching a power conversion efficiency of 14.0%, while the specific power (the ratio of power to device weight) reaches 1.96 kW kg−1, given the fact that the device is constructed on a 57-μm-thick polyethylene terephthalate based substrate. The flexible device also demonstrates excellent robustness against mechanical deformation, retaining >95% of its original efficiency after 5,000 times fully bending. Our results confirmed that perovskite thin films are fully compatible with our flexible substrates, and are thus promising for future applications in flexible and bendable solar cells. PMID:26750664

Characterization of Radiation Hardened Bipolar Linear Devices for High Total Dose Missions

NASA Technical Reports Server (NTRS)

McClure, Steven S.; Harris, Richard D.; Rax, Bernard G.; Thorbourn, Dennis O.

2012-01-01

Radiation hardened linear devices are characterized for performance in combined total dose and displacement damage environments for a mission scenario with a high radiation level. Performance at low and high dose rate for both biased and unbiased conditions is compared and the impact to hardness assurance methodology is discussed.

Development of induction current acquisition device based on ARM

NASA Astrophysics Data System (ADS)

Ji, Yanju; Liu, Xiyang; Huang, Wanyu; Yao, Jiang; Yuan, Guiyang; Hui, Luan; Guan, Shanshan

2018-03-01

We design an induction current acquisition device based on ARM in order to realize high resolution and high sampling rate of acquisition for the induction current in wire-loop. Considering its characteristics of fast attenuation and small signal amplitude, we use the method of multi-path fusion for noise suppression. In the paper, the design is carried out from three aspects of analog circuit and device selection, independent power supply structure and the electromagnetic interference suppression of high frequency. DMA and ping-pong buffer, as a new data transmission technology, solves real time storage problem of massive data. The performance parameters of ARM acquisition device are tested. The comparison test of ARM acquisition device and cRIO acquisition device is performed at different time constants. The results show that it has 120dB dynamic range, 47kHz bandwidth, 96kHz sampling rate, 5μV the smallest resolution, and its average error value is not more than 4%, which proves the high accuracy and stability of the device.

A graphene/single GaAs nanowire Schottky junction photovoltaic device.

PubMed

Luo, Yanbin; Yan, Xin; Zhang, Jinnan; Li, Bang; Wu, Yao; Lu, Qichao; Jin, Chenxiaoshuai; Zhang, Xia; Ren, Xiaomin

2018-05-17

A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

Development of high-performance printed organic field-effect transistors and integrated circuits.

PubMed

Xu, Yong; Liu, Chuan; Khim, Dongyoon; Noh, Yong-Young

2015-10-28

Organic electronics is regarded as an important branch of future microelectronics especially suited for large-area, flexible, transparent, and green devices, with their low cost being a key benefit. Organic field-effect transistors (OFETs), the primary building blocks of numerous expected applications, have been intensively studied, and considerable progress has recently been made. However, there are still a number of challenges to the realization of high-performance OFETs and integrated circuits (ICs) using printing technologies. Therefore, in this perspective article, we investigate the main issues concerning developing high-performance printed OFETs and ICs and seek strategies for further improvement. Unlike many other studies in the literature that deal with organic semiconductors (OSCs), printing technology, and device physics, our study commences with a detailed examination of OFET performance parameters (e.g., carrier mobility, threshold voltage, and contact resistance) by which the related challenges and potential solutions to performance development are inspected. While keeping this complete understanding of device performance in mind, we check the printed OFETs' components one by one and explore the possibility of performance improvement regarding device physics, material engineering, processing procedure, and printing technology. Finally, we analyze the performance of various organic ICs and discuss ways to optimize OFET characteristics and thus develop high-performance printed ICs for broad practical applications.

High-Performance Solid-State Thermionic Energy Conversion Based on 2D van der Waals Heterostructures: A First-Principles Study.

PubMed

Wang, Xiaoming; Zebarjadi, Mona; Esfarjani, Keivan

2018-06-18

Two-dimensional (2D) van der Waals heterostructures (vdWHs) have shown multiple functionalities with great potential in electronics and photovoltaics. Here, we show their potential for solid-state thermionic energy conversion and demonstrate a designing strategy towards high-performance devices. We propose two promising thermionic devices, namely, the p-type Pt-G-WSe 2 -G-Pt and n-type Sc-WSe 2 -MoSe 2 -WSe 2 -Sc. We characterize the thermionic energy conversion performance of the latter using first-principles GW calculations combined with real space Green's function (GF) formalism. The optimal barrier height and high thermal resistance lead to an excellent performance. The proposed device is found to have a room temperature equivalent figure of merit of 1.2 which increases to 3 above 600 K. A high performance with cooling efficiency over 30% of the Carnot efficiency above 450 K is achieved. Our designing and characterization method can be used to pursue other potential thermionic devices based on vdWHs.

Superlattice structure modeling and simulation of High Electron Mobility Transistor for improved performance

NASA Astrophysics Data System (ADS)

Munusami, Ravindiran; Yakkala, Bhaskar Rao; Prabhakar, Shankar

2013-12-01

Magnetic tunnel junction were made by inserting the magnetic materials between the source, channel and the drain of the High Electron Mobility Transistor (HEMT) to enhance the performance. Material studio software package was used to design the superlattice layers. Different cases were analyzed to optimize the performance of the device by placing the magnetic material at different positions of the device. Simulation results based on conductivity reveals that the device has a very good electron transport due to the magnetic materials and will amplify very low frequency signals.

Hadoop-MCC: Efficient Multiple Compound Comparison Algorithm Using Hadoop.

PubMed

Hua, Guan-Jie; Hung, Che-Lun; Tang, Chuan Yi

2018-01-01

In the past decade, the drug design technologies have been improved enormously. The computer-aided drug design (CADD) has played an important role in analysis and prediction in drug development, which makes the procedure more economical and efficient. However, computation with big data, such as ZINC containing more than 60 million compounds data and GDB-13 with more than 930 million small molecules, is a noticeable issue of time-consuming problem. Therefore, we propose a novel heterogeneous high performance computing method, named as Hadoop-MCC, integrating Hadoop and GPU, to copy with big chemical structure data efficiently. Hadoop-MCC gains the high availability and fault tolerance from Hadoop, as Hadoop is used to scatter input data to GPU devices and gather the results from GPU devices. Hadoop framework adopts mapper/reducer computation model. In the proposed method, mappers response for fetching SMILES data segments and perform LINGO method on GPU, then reducers collect all comparison results produced by mappers. Due to the high availability of Hadoop, all of LINGO computational jobs on mappers can be completed, even if some of the mappers encounter problems. A comparison of LINGO is performed on each the GPU device in parallel. According to the experimental results, the proposed method on multiple GPU devices can achieve better computational performance than the CUDA-MCC on a single GPU device. Hadoop-MCC is able to achieve scalability, high availability, and fault tolerance granted by Hadoop, and high performance as well by integrating computational power of both of Hadoop and GPU. It has been shown that using the heterogeneous architecture as Hadoop-MCC effectively can enhance better computational performance than on a single GPU device. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

Interfacial Energy-Level Alignment for High-Performance All-Inorganic Perovskite CsPbBr3 Quantum Dot-Based Inverted Light-Emitting Diodes.

PubMed

Subramanian, Alagesan; Pan, Zhenghui; Zhang, Zhenbo; Ahmad, Imtiaz; Chen, Jing; Liu, Meinan; Cheng, Shuang; Xu, Yijun; Wu, Jun; Lei, Wei; Khan, Qasim; Zhang, Yuegang

2018-04-18

All-inorganic perovskite light-emitting diode (PeLED) has a high stability in ambient atmosphere, but it is a big challenge to achieve high performance of the device. Basically, device design, control of energy-level alignment, and reducing the energy barrier between adjacent layers in the architecture of PeLED are important factors to achieve high efficiency. In this study, we report a CsPbBr 3 -based PeLED with an inverted architecture using lithium-doped TiO 2 nanoparticles as the electron transport layer (ETL). The optimal lithium doping balances the charge carrier injection between the hole transport layer and ETL, leading to superior device performance. The device exhibits a current efficiency of 3 cd A -1 , a luminance efficiency of 2210 cd m -2 , and a low turn-on voltage of 2.3 V. The turn-on voltage is one of the lowest values among reported CsPbBr 3 -based PeLEDs. A 7-fold increase in device efficiencies has been obtained for lithium-doped TiO 2 compared to that for undoped TiO 2 -based devices.

Optical systems fabricated by printing-based assembly

DOEpatents

Rogers, John; Nuzzo, Ralph; Meitl, Matthew; Menard, Etienne; Baca, Alfred J; Motala, Michael; Ahn, Jong-Hyun; Park, Sang-Il; Yu, Chang-Jae; Ko, Heung Cho; Stoykovich, Mark; Yoon, Jongseung

2014-05-13

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Optical systems fabricated by printing-based assembly

DOEpatents

Rogers, John [Champaign, IL; Nuzzo, Ralph [Champaign, IL; Meitl, Matthew [Durham, NC; Menard, Etienne [Durham, NC; Baca, Alfred J [Urbana, IL; Motala, Michael [Champaign, IL; Ahn, Jong-Hyun [Suwon, KR; Park, Sang-II [Savoy, IL; Yu,; Chang-Jae, [Urbana, IL; Ko, Heung-Cho [Gwangju, KR; Stoykovich,; Mark, [Dover, NH; Yoon, Jongseung [Urbana, IL

2011-07-05

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Optical systems fabricated by printing-based assembly

DOEpatents

Rogers, John; Nuzzo, Ralph; Meitl, Matthew; Menard, Etienne; Baca, Alfred; Motala, Michael; Ahn, Jong -Hyun; Park, Sang -Il; Yu, Chang -Jae; Ko, Heung Cho; Stoykovich, Mark; Yoon, Jongseung

2015-08-25

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Optical systems fabricated by printing-based assembly

DOEpatents

Rogers, John; Nuzzo, Ralph; Meitl, Matthew; Menard, Etienne; Baca, Alfred; Motala, Michael; Ahn, Jong-Hyun; Park, Sang-Il; Yu, Chang-Jae; Ko, Heung Cho; Stoykovich, Mark; Yoon, Jongseung

2017-03-21

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

NASA Technical Reports Server (NTRS)

Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Del Castillo, Linda Y.; Fitzpatrick, Fred; Chen, Yuan

2016-01-01

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

Self-Heating Effects In Polysilicon Source Gated Transistors

PubMed Central

Sporea, R. A.; Burridge, T.; Silva, S. R. P.

2015-01-01

Source-gated transistors (SGTs) are thin-film devices which rely on a potential barrier at the source to achieve high gain, tolerance to fabrication variability, and low series voltage drop, relevant to a multitude of energy-efficient, large-area, cost effective applications. The current through the reverse-biased source barrier has a potentially high positive temperature coefficient, which may lead to undesirable thermal runaway effects and even device failure through self-heating. Using numerical simulations we show that, even in highly thermally-confined scenarios and at high current levels, self-heating is insufficient to compromise device integrity. Performance is minimally affected through a modest increase in output conductance, which may limit the maximum attainable gain. Measurements on polysilicon devices confirm the simulated results, with even smaller penalties in performance, largely due to improved heat dissipation through metal contacts. We conclude that SGTs can be reliably used for high gain, power efficient analog and digital circuits without significant performance impact due to self-heating. This further demonstrates the robustness of SGTs. PMID:26351099

Transparent, flexible, and high-performance supercapacitor based on ultrafine nickel cobaltite nanospheres

NASA Astrophysics Data System (ADS)

Liu, Xinyue; Wang, Jianxing; Yang, Guowei

2017-07-01

There has been growing interest in transparent and flexible electronic devices such as wrist watch, cell phone, and so on. These devices need the power sources which also have transparent and flexible features. Here, we demonstrate a transparent and flexible energy storage device with outstanding electrochemical performance, high energy density, and super-long life based on ultrafine NiCo2O4 nanospheres which are synthesized by an innovative method concerning laser ablation in liquid and hydrothermal process. The ultrafine NiCo2O4 nanospheres provide high electrochemical activity and the synthesized colloidal solution is suitable for transparent devices. The transparent and flexible device shows a high specific capacitance of 299.7 F/g at the scan rate of 1 mV/s and a long cycling life of 90.4% retention rate after 10,000 cycles at a scan rate of 10 mV/s, which is superior to that of previously reported transparent and flexible energy storage device. In addition, an optical transmittance up to 55% at the wavelength of 550 nm is obtained, and the bending test shows that the bending angle makes no difference to the specific capacitance of the device. In addition, it shows an outstanding energy density of 10.41 Wh/kg. The integrated electrochemical performances of the device are good based on NiCo2O4 nanospheres. These findings make the ultrafine NiCo2O4 nanospheres being promising electrode materials for transparent and flexible energy storage devices.

High performance nonvolatile memory devices based on Cu2-xSe nanowires

NASA Astrophysics Data System (ADS)

Wu, Chun-Yan; Wu, Yi-Liang; Wang, Wen-Jian; Mao, Dun; Yu, Yong-Qiang; Wang, Li; Xu, Jun; Hu, Ji-Gang; Luo, Lin-Bao

2013-11-01

We report on the rational synthesis of one-dimensional Cu2-xSe nanowires (NWs) via a solution method. Electrical analysis of Cu2-xSe NWs based memory device exhibits a stable and reproducible bipolar resistive switching behavior with a low set voltage (0.3-0.6 V), which can enable the device to write and erase data efficiently. Remarkably, the memory device has a record conductance switching ratio of 108, much higher than other devices ever reported. At last, a conducting filaments model is introduced to account for the resistive switching behavior. The totality of this study suggests that the Cu2-xSe NWs are promising building blocks for fabricating high-performance and low-consumption nonvolatile memory devices.

On the Properties and Design of Organic Light-Emitting Devices

NASA Astrophysics Data System (ADS)

Erickson, Nicholas C.

Organic light-emitting devices (OLEDs) are attractive for use in next-generation display and lighting technologies. In display applications, OLEDs offer a wide emission color gamut, compatibility with flexible substrates, and high power efficiencies. In lighting applications, OLEDs offer attractive features such as broadband emission, high-performance, and potential compatibility with low-cost manufacturing methods. Despite recent demonstrations of near unity internal quantum efficiencies (photons out per electron in), OLED adoption lags conventional technologies, particularly in large-area displays and general lighting applications. This thesis seeks to understand the optical and electronic properties of OLED materials and device architectures which lead to not only high peak efficiency, but also reduced device complexity, high efficiency under high excitation, and optimal white-light emission. This is accomplished through the careful manipulation of organic thin film compositions fabricated via vacuum thermal evaporation, and the introduction of a novel device architecture, the graded-emissive layer (G-EML). This device architecture offers a unique platform to study the electronic properties of varying compositions of organic semiconductors and the resulting device performance. This thesis also introduces an experimental technique to measure the spatial overlap of electrons and holes within an OLED's emissive layer. This overlap is an important parameter which is affected by the choice of materials and device design, and greatly impacts the operation of the OLED at high excitation densities. Using the G-EML device architecture, OLEDs with improved efficiency characteristics are demonstrated, achieving simultaneously high brightness and high efficiency.

Light-induced lattice expansion leads to high-efficiency perovskite solar cells

NASA Astrophysics Data System (ADS)

Tsai, Hsinhan; Asadpour, Reza; Blancon, Jean-Christophe; Stoumpos, Constantinos C.; Durand, Olivier; Strzalka, Joseph W.; Chen, Bo; Verduzco, Rafael; Ajayan, Pulickel M.; Tretiak, Sergei; Even, Jacky; Alam, Muhammad Ashraf; Kanatzidis, Mercouri G.; Nie, Wanyi; Mohite, Aditya D.

2018-04-01

Light-induced structural dynamics plays a vital role in the physical properties, device performance, and stability of hybrid perovskite–based optoelectronic devices. We report that continuous light illumination leads to a uniform lattice expansion in hybrid perovskite thin films, which is critical for obtaining high-efficiency photovoltaic devices. Correlated, in situ structural and device characterizations reveal that light-induced lattice expansion benefits the performances of a mixed-cation pure-halide planar device, boosting the power conversion efficiency from 18.5 to 20.5%. The lattice expansion leads to the relaxation of local lattice strain, which lowers the energetic barriers at the perovskite-contact interfaces, thus improving the open circuit voltage and fill factor. The light-induced lattice expansion did not compromise the stability of these high-efficiency photovoltaic devices under continuous operation at full-spectrum 1-sun (100 milliwatts per square centimeter) illumination for more than 1500 hours.

III-V/Ge MOS device technologies for low power integrated systems

NASA Astrophysics Data System (ADS)

Takagi, S.; Noguchi, M.; Kim, M.; Kim, S.-H.; Chang, C.-Y.; Yokoyama, M.; Nishi, K.; Zhang, R.; Ke, M.; Takenaka, M.

2016-11-01

CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the promising devices for high performance and low power integrated systems in the future technology nodes, because of the enhanced carrier transport properties. In addition, Tunneling-FETs (TFETs) using Ge/III-V materials are regarded as one of the most important steep slope devices for the ultra-low power applications. In this paper, we address the device and process technologies of Ge/III-V MOSFETs and TFETs on the Si CMOS platform. The channel formation, source/drain (S/D) formation and gate stack engineering are introduced for satisfying the device requirements. The plasma post oxidation to form GeOx interfacial layers is a key gate stack technology for Ge CMOS. Also, direct wafer bonding of ultrathin body quantum well III-V-OI channels, combined with Tri-gate structures, realizes high performance III-V n-MOSFETs on Si. We also demonstrate planar-type InGaAs and Ge/strained SOI TFETs. The defect-less p+-n source junction formation with steep impurity profiles is a key for high performance TFET operation.

High Performance Hermetic Package For LiNbO3 Electro-Optic Waveguide Devices

NASA Astrophysics Data System (ADS)

Preston, K. R.; Macdonald, B. M.; Harmon, R. A.; Ford, C. W.; Shaw, R. N.; Reid, I.; Davidson, J. H.; Beaumont, A. R.; Booth, R. C.

1989-02-01

A high performance fibre-tailed package for LiNbO3 electro-optic waveguide devices is described. The package is based around a hermetic metal submodule which contains no epoxy or other organic materials. The LiNbO3 chip is mounted using a soldering technique, and laser welding is used for fibre fixing to give stable, low loss optical coupling to single mode fibres. Optical reflections are minimised by the use of antireflective coatings on the fibre ends and waveguide facets. High speed electrical connections are made via coplanar glass-sealed leadthroughs to LiNb03 travelling wave devices, and packaged device operation to frequencies in excess of 4GHz is demonstrated.

Collection-limited theory interprets the extraordinary response of single semiconductor organic solar cells

PubMed Central

Ray, Biswajit; Baradwaj, Aditya G.; Khan, Mohammad Ryyan; Boudouris, Bryan W.; Alam, Muhammad Ashraful

2015-01-01

The bulk heterojunction (BHJ) organic photovoltaic (OPV) architecture has dominated the literature due to its ability to be implemented in devices with relatively high efficiency values. However, a simpler device architecture based on a single organic semiconductor (SS-OPV) offers several advantages: it obviates the need to control the highly system-dependent nanoscale BHJ morphology, and therefore, would allow the use of broader range of organic semiconductors. Unfortunately, the photocurrent in standard SS-OPV devices is typically very low, which generally is attributed to inefficient charge separation of the photogenerated excitons. Here we show that the short-circuit current density from SS-OPV devices can be enhanced significantly (∼100-fold) through the use of inverted device configurations, relative to a standard OPV device architecture. This result suggests that charge generation may not be the performance bottleneck in OPV device operation. Instead, poor charge collection, caused by defect-induced electric field screening, is most likely the primary performance bottleneck in regular-geometry SS-OPV cells. We justify this hypothesis by: (i) detailed numerical simulations, (ii) electrical characterization experiments of functional SS-OPV devices using multiple polymers as active layer materials, and (iii) impedance spectroscopy measurements. Furthermore, we show that the collection-limited photocurrent theory consistently interprets typical characteristics of regular SS-OPV devices. These insights should encourage the design and OPV implementation of high-purity, high-mobility polymers, and other soft materials that have shown promise in organic field-effect transistor applications, but have not performed well in BHJ OPV devices, wherein they adopt less-than-ideal nanostructures when blended with electron-accepting materials. PMID:26290582

Collection-limited theory interprets the extraordinary response of single semiconductor organic solar cells.

PubMed

Ray, Biswajit; Baradwaj, Aditya G; Khan, Mohammad Ryyan; Boudouris, Bryan W; Alam, Muhammad Ashraful

2015-09-08

The bulk heterojunction (BHJ) organic photovoltaic (OPV) architecture has dominated the literature due to its ability to be implemented in devices with relatively high efficiency values. However, a simpler device architecture based on a single organic semiconductor (SS-OPV) offers several advantages: it obviates the need to control the highly system-dependent nanoscale BHJ morphology, and therefore, would allow the use of broader range of organic semiconductors. Unfortunately, the photocurrent in standard SS-OPV devices is typically very low, which generally is attributed to inefficient charge separation of the photogenerated excitons. Here we show that the short-circuit current density from SS-OPV devices can be enhanced significantly (∼100-fold) through the use of inverted device configurations, relative to a standard OPV device architecture. This result suggests that charge generation may not be the performance bottleneck in OPV device operation. Instead, poor charge collection, caused by defect-induced electric field screening, is most likely the primary performance bottleneck in regular-geometry SS-OPV cells. We justify this hypothesis by: (i) detailed numerical simulations, (ii) electrical characterization experiments of functional SS-OPV devices using multiple polymers as active layer materials, and (iii) impedance spectroscopy measurements. Furthermore, we show that the collection-limited photocurrent theory consistently interprets typical characteristics of regular SS-OPV devices. These insights should encourage the design and OPV implementation of high-purity, high-mobility polymers, and other soft materials that have shown promise in organic field-effect transistor applications, but have not performed well in BHJ OPV devices, wherein they adopt less-than-ideal nanostructures when blended with electron-accepting materials.

Two Different Maintenance Strategies in the Hospital Environment: Preventive Maintenance for Older Technology Devices and Predictive Maintenance for Newer High-Tech Devices.

PubMed

Sezdi, Mana

2016-01-01

A maintenance program generated through the consideration of characteristics and failures of medical equipment is an important component of technology management. However, older technology devices and newer high-tech devices cannot be efficiently managed using the same strategies because of their different characteristics. This study aimed to generate a maintenance program comprising two different strategies to increase the efficiency of device management: preventive maintenance for older technology devices and predictive maintenance for newer high-tech devices. For preventive maintenance development, 589 older technology devices were subjected to performance verification and safety testing (PVST). For predictive maintenance development, the manufacturers' recommendations were used for 134 high-tech devices. These strategies were evaluated in terms of device reliability. This study recommends the use of two different maintenance strategies for old and new devices at hospitals in developing countries. Thus, older technology devices that applied only corrective maintenance will be included in maintenance like high-tech devices.

Two Different Maintenance Strategies in the Hospital Environment: Preventive Maintenance for Older Technology Devices and Predictive Maintenance for Newer High-Tech Devices

PubMed Central

Sezdi, Mana

2016-01-01

A maintenance program generated through the consideration of characteristics and failures of medical equipment is an important component of technology management. However, older technology devices and newer high-tech devices cannot be efficiently managed using the same strategies because of their different characteristics. This study aimed to generate a maintenance program comprising two different strategies to increase the efficiency of device management: preventive maintenance for older technology devices and predictive maintenance for newer high-tech devices. For preventive maintenance development, 589 older technology devices were subjected to performance verification and safety testing (PVST). For predictive maintenance development, the manufacturers' recommendations were used for 134 high-tech devices. These strategies were evaluated in terms of device reliability. This study recommends the use of two different maintenance strategies for old and new devices at hospitals in developing countries. Thus, older technology devices that applied only corrective maintenance will be included in maintenance like high-tech devices. PMID:27195666

Fast response pyroelectric detector-preamplifier assembled device

NASA Astrophysics Data System (ADS)

Bai, PiJi; Tai, Yunjian; Liu, Huiping

2008-03-01

The pyroelectric detector is wide used for its simple structure and high performance to price ratio. It has been used in thermal detecting, infrared spectrum and laser testing. When the pyroelectric detector was applied in practice, fast reponse speed is need. For improving the response speed of the pyroelectric detector some specific technology has been used in the preamplifier schematic. High sense and fast response character of the pyroelectric detector-preamplifier assembled device had been achieved. When the device is applied in acute concussion condition, it must survive from the acute concussion condition testing. For it reliability some specific technology was used in the device fabricating procedure. At last the performance parameter testing result and simulation application condition result given in this paper show the performance of the pyroelectric detector-preamplifier assembled device had achieved the advance goal.

Controllable Growth of Perovskite Films by Room-Temperature Air Exposure for Efficient Planar Heterojunction Photovoltaic Cells

DOE PAGES

Yang, Bin; Dyck, Ondrej; Poplawsky, Jonathan; ...

2015-12-01

A two-step-solution-processing approach has been established to grow void-free perovskite films for low-cost and high-performance planar heterojunction photovoltaic devices. We generally applied a high-temperature thermal annealing treatment in order to drive the diffusion of CH 3NH 3I precursor molecules into the compact PbI 2 layer to form perovskite films. But, thermal annealing for extended periods would lead to degraded device performance due to the defects generated by decomposition of perovskite into PbI 2. In this work, we explored a controllable layer-by-layer spin-coating method to grow bilayer CH 3NH 3I/PbI 2 films, and then drive the interdiffusion between PbI 2 andmore » CH 3NH 3I layers by a simple room-temperature-air-exposure for making well-oriented, highly-crystalline perovskite films without thermal annealing. This high degree of crystallinity resulted in a carrier diffusion length of ~ 800 nm and high device efficiency of 15.6%, which is comparable to the reported values from thermally-annealed perovskite films based counterparts. Finally, the simplicity and high device performance of this processing approach is highly promising for direct integration into industrial-scale device manufacture.« less

VERIFICATION OF HIGH-RATE SEPARATION DEVICES UNDER THE WET-WEATHER FLOW TECHNOLOGIES PILOT - ETV PROGRAM

EPA Science Inventory

This paper presents performance verification data on two types of high-rate separation devices utilized for solids removal: Vortex separation devices (a class of physical treatment technologies that use cylindrical chambers to create centrifugal forces that separate settleable so...

Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Llinas, Juan Pablo; Fairbrother, Andrew; Borin Barin, Gabriela

Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L ch ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (I on > 1 μA at V d = -1 V) and highmore » I on /I off ~ 10 5 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.« less

Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons

DOE PAGES

Llinas, Juan Pablo; Fairbrother, Andrew; Borin Barin, Gabriela; ...

2017-09-21

Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L ch ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (I on > 1 μA at V d = -1 V) and highmore » I on /I off ~ 10 5 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.« less

A C-Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector application.

PubMed

Chekol, Solomon Amsalu; Yoo, Jongmyung; Park, Jaehyuk; Song, Jeonghwan; Sung, Changhyuck; Hwang, Hyunsang

2018-08-24

In this letter, we demonstrate a new binary ovonic threshold switching (OTS) selector device scalable down to ø30 nm based on C-Te. Our proposed selector device exhibits outstanding performance such as a high switching ratio (I on /I off  > 10 5 ), an extremely low off-current (∼1 nA), an extremely fast operating speed of <10 ns (transition time of <2 ns and delay time of <8 ns), high endurance (10 9 ), and high thermal stability (>450 °C). The observed high thermal stability is caused by the relatively small atomic size of C, compared to Te, which can effectively suppress the segregation and crystallization of Te in the OTS film. Furthermore, to confirm the functionality of the selector in a crossbar array, we evaluated a 1S-1R device by integrating our OTS device with a ReRAM (resistive random access memory) device. The 1S-1R integrated device exhibits a successful suppression of leakage current at the half-selected cell and shows an excellent read-out margin (>2 12 word lines) in a fast read operation.

Advancing the Technology of Monolithic CMOS detectors for their use as X-ray Imaging Spectrometers

NASA Astrophysics Data System (ADS)

Kenter, Almus

The Smithsonian Astrophysical Observatory (SAO) proposes a two year program to further advance the scientific capabilities of monolithic CMOS detectors for use as x-ray imaging spectrometers. This proposal will build upon the progress achieved with funding from a previous APRA proposal that ended in 2013. As part of that previous proposal, x- ray optimized, highly versatile, monolithic CMOS imaging detectors and technology were developed and tested. The performance and capabilities of these devices were then demonstrated, with an emphasis on the performance advantages these devices have over CCDs and other technologies. The developed SAO/SRI-Sarnoff CMOS devices incorporate: Low noise, high sensitivity ("gain") pixels; Highly parallel on-chip signal chains; Standard and very high resistivity (30,000Ohm-cm) Si; Back-Side thinning and passivation. SAO demonstrated the performance benefits of each of these features in these devices. This new proposal high-lights the performance of this previous generation of devices, and segues into new technology and capability. The high sensitivity ( 135uV/e) 6 Transistor (6T) Pinned Photo Diode (PPD) pixels provided a large charge to voltage conversion gain to the detect and resolve even small numbers of photo electrons produced by x-rays. The on-chip, parallel signal chain processed an entire row of pixels in the same time that a CCD requires to processes a single pixel. The resulting high speed operation ( 1000 times faster than CCD) provide temporal resolution while mitigating dark current and allowed room temperature operation. The high resistivity Si provided full (over) depletion for thicker devices which increased QE for higher energy x-rays. In this proposal, SAO will investigate existing NMOS and existing PMOS devices as xray imaging spectrometers. Conventional CMOS imagers are NMOS. NMOS devices collect and measure photo-electrons. In contrast, PMOS devices collect and measure photo-holes. PMOS devices have various attributes that would make them superior for use in X-ray astronomy. In particular, PMOS has: "no" photo-charge recombination; "no" Random Telegraph Signal noise (RTS); and lower read noise. The existing SRI/Sarnoff PMOS devices are small and have been developed for non-intensified night vision applications, however, no x-ray evaluation of a monolithic PMOS device has ever been made. In addition to these PMOS devices, SAO will also evaluate existing NMOS scale-able format devices that can be fabricated in any rectangular size/shape using stitchable reticles. These "Mk by Nk" devices would be ideal for large X-ray focal planes or long grating readouts. The Sarnoff/SRI Mk by Nk format devices have been designed, with foresight, so that they can be fabricated in either PMOS or NMOS by changing a single fabrication reticle and by changing the type of Si substrate. If X-ray performance results are expected, this proposal will lead the way to future fabrication of Mk by Nk PMOS devices that would be ideal for X-ray astronomy missions such as "X-ray Surveyor". SAO will also investigate the interaction of directly deposited Optical Blocking Filters (OBFs) on various back side passivated devices, and their resultant effects on very "soft" x-ray response. The latest CMOS processes and very fast on-chip, and off-chip digital readout signal chains and camera systems will be demonstrated.

Solution processed ternary blend nano-composite charge regulation layer to enhance inverted OLED performances

NASA Astrophysics Data System (ADS)

Kaçar, Rifat; Mucur, Selin Pıravadılı; Yıldız, Fikret; Dabak, Salih; Tekin, Emine

2018-04-01

Inverted bottom-emission organic light emitting diodes (IBOLEDs) have attracted increasing attention due to their exceptional air stability and applications in active-matrix displays. For gaining high IBOLED device efficiencies, it is crucial to develop an effective strategy to make the bottom electrode easy for charge injection and transport. Charge selectivity, blocking the carrier flow towards the unfavourable side, plays an important role in determining charge carrier balance and accordingly radiative recombination efficiency. It is therefore highly desirable to functionalize an interfacial layer which will perform many different tasks simultaneously. Here, we contribute to the hole-blocking ability of the zinc oxide/polyethyleneimine (ZnO:PEI) nano-composite (NC) interlayer with the intention of increasing the OLED device efficiency. With this purpose in mind, a small amount of 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBi) was added as a hole-blocking molecule into the binary blend of ZnO and PEI solution. The device with a ternary ZnO:PEI:TPBi NC interlayer achieved a maximum current efficiency of 38.20 cd A-1 and a power efficiency of 34.29 lm W-1 with a luminance of 123 200 cd m-2, which are high performance parameters for inverted device architecture. The direct comparisons of device performances incorporating ZnO only, ZnO/PEI bilayers, and ZnO:PEI binary NC counterparts were also performed, which shed light on the origin of device performance enhancement.

Ultrafast, superhigh gain visible-blind UV detector and optical logic gates based on nonpolar a-axial GaN nanowire

NASA Astrophysics Data System (ADS)

Wang, Xingfu; Zhang, Yong; Chen, Xinman; He, Miao; Liu, Chao; Yin, Yian; Zou, Xianshao; Li, Shuti

2014-09-01

Nonpolar a-axial GaN nanowire (NW) was first used to construct the MSM (metal-semiconductor-metal) symmetrical Schottky contact device for application as visible-blind ultraviolet (UV) detector. Without any surface or composition modifications, the fabricated device demonstrated a superior performance through a combination of its high sensitivity (up to 104 A W-1) and EQE value (up to 105), as well as ultrafast (<26 ms) response speed, which indicates that a balance between the photocurrent gain and the response speed has been achieved. Based on its excellent photoresponse performance, an optical logic AND gate and OR gate have been demonstrated for performing photo-electronic coupled logic devices by further integrating the fabricated GaN NW detectors, which logically convert optical signals to electrical signals in real time. These results indicate the possibility of using a nonpolar a-axial GaN NW not only as a high performance UV detector, but also as a stable optical logic device, both in light-wave communications and for future memory storage.Nonpolar a-axial GaN nanowire (NW) was first used to construct the MSM (metal-semiconductor-metal) symmetrical Schottky contact device for application as visible-blind ultraviolet (UV) detector. Without any surface or composition modifications, the fabricated device demonstrated a superior performance through a combination of its high sensitivity (up to 104 A W-1) and EQE value (up to 105), as well as ultrafast (<26 ms) response speed, which indicates that a balance between the photocurrent gain and the response speed has been achieved. Based on its excellent photoresponse performance, an optical logic AND gate and OR gate have been demonstrated for performing photo-electronic coupled logic devices by further integrating the fabricated GaN NW detectors, which logically convert optical signals to electrical signals in real time. These results indicate the possibility of using a nonpolar a-axial GaN NW not only as a high performance UV detector, but also as a stable optical logic device, both in light-wave communications and for future memory storage. Electronic supplementary information (ESI) available: Details of the EDS and SAED data, supplementary results of the UV detector, and the discussion of the transport properties of the MSM Schottky contact devices. See DOI: 10.1039/c4nr03581j

Metalorganic chemical vapor deposition of AlGaAs and InGaP heterojunction bipolar transistors

NASA Astrophysics Data System (ADS)

Pan, N.; Welser, R. E.; Lutz, C. R.; DeLuca, P. M.; Han, B.; Hong, K.

2001-05-01

Heterojunction bipolar transistors (HBT) are now beginning to be widely incorporated as power amplifiers, laser drivers, multiplexers, clock data recovery circuits, as well as transimpedance and broadband amplifiers in high performance millimeter wave circuits (MMICs). The increasing acceptance of this device is principally due to advancements in metalorganic chemical vapor deposition (MOCVD), device processing, and circuit design technologies. Many of the DC electrical characteristics of large area devices can be directly correlated to the DC performance of small area RF devices. A precise understanding of the growth parameters and their relationship to device characteristics is critical for ensuring the high degree of reproducibility required for low cost high-yield volume manufacturing. Significant improvements in the understanding of the MOCVD growth process have been realized through the implementation of statistical process control on the key HBT device parameters. This tool has been successfully used to maintain the high quality of the device characteristics in high-volume production of 4″ GaAs-based HBTs. There is a growing demand to migrate towards 6″ diameter wafer size due to the potential cost reductions and increased volume production that can be realized. Preliminary results, indicating good heterostructure layer characteristics, demonstrate the feasibility of 6″ InGaP-based HBT devices.

Gallium nitride vertical power devices on foreign substrates: a review and outlook

NASA Astrophysics Data System (ADS)

Zhang, Yuhao; Dadgar, Armin; Palacios, Tomás

2018-07-01

Vertical gallium nitride (GaN) power devices have attracted increased attention due to their superior high-voltage and high-current capacity as well as easier thermal management than lateral GaN high electron mobility transistors. Vertical GaN devices are promising candidates for next-generation power electronics in electric vehicles, data centers, smart grids and renewable energy process. The use of low-cost foreign substrates such as silicon (Si) substrates, instead of the expensive free-standing GaN substrates, could greatly trim material cost and enable large-diameter wafer processing while maintaining high device performance. This review illustrates recent progress in material epitaxy, device design, device physics and processing technologies for the development of vertical GaN power devices on low-cost foreign substrates. Although the device technologies are still at the early stage of development, state-of-the-art vertical GaN-on-Si power diodes have already shown superior Baliga’s figure of merit than commercial SiC and Si power devices at the voltage classes beyond 600 V. Furthermore, we unveil the design space of vertical GaN power devices on native and different foreign substrates, from the analysis of the impact of dislocation and defects on device performance. We conclude by identifying the application space, current challenges and exciting research opportunities in this very dynamic research field.

Recent progress in nanostructured next-generation field emission devices

NASA Astrophysics Data System (ADS)

Mittal, Gaurav; Lahiri, Indranil

2014-08-01

Field emission has been known to mankind for more than a century, and extensive research in this field for the last 40-50 years has led to development of exciting applications such as electron sources, miniature x-ray devices, display materials, etc. In the last decade, large-area field emitters were projected as an important material to revolutionize healthcare and medical devices, and space research. With the advent of nanotechnology and advancements related to carbon nanotubes, field emitters are demonstrating highly enhanced performance and novel applications. Next-generation emitters need ultra-high emission current density, high brightness, excellent stability and reproducible performance. Novel design considerations and application of new materials can lead to achievement of these capabilities. This article presents an overview of recent developments in this field and their effects on improved performance of field emitters. These advancements are demonstrated to hold great potential for application in next-generation field emission devices.

Remanagement of Singlet and Triplet Excitons in Single-Emissive-Layer Hybrid White Organic Light-Emitting Devices Using Thermally Activated Delayed Fluorescent Blue Exciplex.

PubMed

Liu, Xiao-Ke; Chen, Zhan; Qing, Jian; Zhang, Wen-Jun; Wu, Bo; Tam, Hoi Lam; Zhu, Furong; Zhang, Xiao-Hong; Lee, Chun-Sing

2015-11-25

A high-performance hybrid white organic light-emitting device (WOLED) is demonstrated based on an efficient novel thermally activated delayed fluorescence (TADF) blue exciplex system. This device shows a low turn-on voltage of 2.5 V and maximum forward-viewing external quantum efficiency of 25.5%, which opens a new avenue for achieving high-performance hybrid WOLEDs with simple structures. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

On Demand Internal Short Circuit Device Enables Verification of Safer, Higher Performing Battery Designs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darcy, Eric; Keyser, Matthew

The Internal Short Circuit (ISC) device enables critical battery safety verification. With the aluminum interstitial heat sink between the cells, normal trigger cells cannot be driven into thermal runaway without excessive temperature bias of adjacent cells. With an implantable, on-demand ISC device, thermal runaway tests show that the conductive heat sinks protected adjacent cells from propagation. High heat dissipation and structural support of Al heat sinks show high promise for safer, higher performing batteries.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crowder, M.A.; Sposili, R.S.; Cho, H.S.

Nonhydrogenated, n-channel, low-temperature-processed, single-crystal Si thin-film transistors (TFT`s) have been fabricated on Si thin films prepared via sequential lateral solidification (SLS). The device characteristics of the resulting SLS TFT`s exhibit properties and a level of performance that are superior to polycrystalline Si-based TFT`s and are comparable to similar devices fabricated on silicon-on-insulator (SOI) substrates or bulk-Si wafers. The authors attribute these high-performance device characteristics to the absence of high-angle grain-boundaries within the active channel portion of the TFT`s.

A novel high-performance self-powered ultraviolet photodetector: Concept, analytical modeling and analysis

NASA Astrophysics Data System (ADS)

Ferhati, H.; Djeffal, F.

2017-12-01

In this paper, a new MSM-UV-photodetector (PD) based on dual wide band-gap material (DM) engineering aspect is proposed to achieve high-performance self-powered device. Comprehensive analytical models for the proposed sensor photocurrent and the device properties are developed incorporating the impact of DM aspect on the device photoelectrical behavior. The obtained results are validated with the numerical data using commercial TCAD software. Our investigation demonstrates that the adopted design amendment modulates the electric field in the device, which provides the possibility to drive appropriate photo-generated carriers without an external applied voltage. This phenomenon suggests achieving the dual role of effective carriers' separation and an efficient reduce of the dark current. Moreover, a new hybrid approach based on analytical modeling and Particle Swarm Optimization (PSO) is proposed to achieve improved photoelectric behavior at zero bias that can ensure favorable self-powered MSM-based UV-PD. It is found that the proposed design methodology has succeeded in identifying the optimized design that offers a self-powered device with high-responsivity (98 mA/W) and superior ION/IOFF ratio (480 dB). These results make the optimized MSM-UV-DM-PD suitable for providing low cost self-powered devices for high-performance optical communication and monitoring applications.

Valley current characterization of high current density resonant tunnelling diodes for terahertz-wave applications

NASA Astrophysics Data System (ADS)

Jacobs, K. J. P.; Stevens, B. J.; Baba, R.; Wada, O.; Mukai, T.; Hogg, R. A.

2017-10-01

We report valley current characterisation of high current density InGaAs/AlAs/InP resonant tunnelling diodes (RTDs) grown by metal-organic vapour phase epitaxy (MOVPE) for THz emission, with a view to investigate the origin of the valley current and optimize device performance. By applying a dual-pass fabrication technique, we are able to measure the RTD I-V characteristic for different perimeter/area ratios, which uniquely allows us to investigate the contribution of leakage current to the valley current and its effect on the PVCR from a single device. Temperature dependent (20 - 300 K) characteristics for a device are critically analysed and the effect of temperature on the maximum extractable power (PMAX) and the negative differential conductance (NDC) of the device is investigated. By performing theoretical modelling, we are able to explore the effect of typical variations in structural composition during the growth process on the tunnelling properties of the device, and hence the device performance.

Surpassing 10% Efficiency Benchmark for Nonfullerene Organic Solar Cells by Scalable Coating in Air from Single Nonhalogenated Solvent

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ye, Long; Xiong, Yuan; Zhang, Qianqian

The commercialization of nonfullerene organic solar cells (OSCs) relies critically on the response under typical operating conditions (for instance, temperature, humidity) and the ability of scale-up. Despite the rapid increase in power conversion efficiency (PCE) of spin-coated devices fabricated in a protective atmosphere, the device efficiencies of printed nonfullerene OSC devices by blade-coating are still lower than 6%. This slow progress significantly limits the practical printing of high-performance nonfullerene OSCs. Here, a new and stable nonfullerene combination was introduced by pairing a commercially available nonfluorinated acceptor IT-M with the polymeric donor FTAZ. Over 12%-efficiency can be achieved in spincoated FTAZ:IT-Mmore » devices using a single halogen-free solvent. More importantly, chlorinefree, in air blade-coating of FTAZ:IT-M is able to yield a PCE of nearly 11%, despite a humidity of ~50%. X-ray scattering results reveal that large π-π coherence lengths, high degree of faceon orientation with respect to the substrate, and small domain spacings of ~20 nm are closely correlated with such high device performance. Our material system and approach yields the highest reported performance for nonfullerene OSC devices by a coating technique approximating scalable fabrication methods and holds great promise for the development of low-cost, low-toxicity, and high-efficiency OSCs by high-throughput production.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Printz, Adam D.; Lipomi, Darren J., E-mail: dlipomi@ucsd.edu

The primary goal of the field concerned with organic semiconductors is to produce devices with performance approaching that of silicon electronics, but with the deformability—flexibility and stretchability—of conventional plastics. However, an inherent competition between deformability and charge transport has long been observed in these materials, and achieving the extreme (or even moderate) deformability implied by the word “plastic” concurrently with high charge transport may be elusive. This competition arises because the properties needed for high carrier mobilities—e.g., rigid chains in π-conjugated polymers and high degrees of crystallinity in the solid state—are antithetical to deformability. On the device scale, this competitionmore » can lead to low-performance yet mechanically robust devices, or high-performance devices that fail catastrophically (e.g., cracking, cohesive failure, and delamination) under strain. There are, however, some observations that contradict the notion of the mutual exclusivity of electronic and mechanical performances. These observations suggest that this problem may not be a fundamental trade-off, but rather an inconvenience that may be negotiated by a logical selection of materials and processing conditions. For example, the selection of the poly(3-alkylthiophene) with a critical side-chain length—poly(3-heptylthiophene) (n = 7)—marries the high deformability of poly(3-octylthiophene) (n = 8) with the high electronic performance (as manifested in photovoltaic efficiency) of poly(3-hexylthiophene) (n = 6). This review explores the relationship between deformability and charge transport in organic semiconductors. The principal conclusions are that reducing the competition between these two parameters is in fact possible, with two demonstrated routes being: (1) incorporation of softer, insulating material into a stiffer, semiconducting material and (2) increasing disorder in a highly ordered film, but not enough to disrupt charge transport pathways. The aim of this review is to provide a bridge between the fields interested in electronic properties and mechanical properties of conjugated polymers. We provide a high-level introduction to some of the important electronic and mechanical properties and measurement techniques for organic electronic devices, demonstrate an apparent competition between good electronic performance and mechanical deformability, and highlight potential strategies for overcoming this undesirable competition. A marriage of these two fields would allow for rational design of materials for applications requiring large-area, low-cost, printable devices that are ultra-flexible or stretchable, such as organic photovoltaic devices and wearable, conformable, or implantable sensors.« less

Dynamic carrier transport modulation for constructing advanced devices with improved performance by piezotronic and piezo-phototronic effects: a brief review

NASA Astrophysics Data System (ADS)

Guo, Zhen; Pan, Haixi; Li, Chuanyu; Zhang, Lili; Yan, Shuai; Zhang, Wei; Yao, Jia; Tang, Yuguo; Yang, Hongbo; Wu, Yihui; Feng, Liping; Zhou, Lianqun

2017-08-01

Carrier generation, transport, separation, and recombination behaviors can be modulated for improving the performance of semiconductor devices by using piezotronic and piezo-phototronic effects with creating piezopotential in crystals based on non-centrosymmetric semiconductor materials such as group II-VI and III-V semiconductors and transition metal dichalcogenides (TMDCs), which have emerged as attractive materials for electronic/photonic applications because of their novel properties. Until now, much effort has been devoted to improving the performance of devices based on the aforementioned materials through modulation of the carrier behavior. However, due to existing drawbacks, it has been difficult to further enhance the device performance for a built structure. However, effective exploration of the piezotronic and piezo-phototronic effects in these semiconducting materials could pave the way to the realization of high-performance devices. In general, the effective modulation of carrier behavior dynamically in devices such as light-emitting diodes, photodetectors, solar cells, nanogenerators, and so on, remains a key challenge. Due to the polarization of ions in semiconductor materials with noncentral symmetry under external strain, a piezopotential is created considering piezotronic and piezo-photoronic effects, which could dynamically modulate charge carrier transport behaviors across p-n junctions or metal-semiconductor interfaces. Through a combination of these effects and semiconductor properties, the performance of the related devices could be improved and new types of devices such as piezoelectric field-effect transistors and sensors have emerged, with potential applications in self-driven devices for effective energy harvesting and biosensing with high sensitivity, which are different from those traditionally designed and may have potential applications in strained triggered devices. The objective of this review is to briefly introduce the corresponding mechanisms for modulating carrier behavior on the basis of piezotronic and piezo-phototronic effects in materials such as group II-VI and group III-V semiconductors and TMDCs, as well as to discuss possible solutions to effectively enhance the performance of the devices via carrier modulation.

Carbon Based Transistors and Nanoelectronic Devices

NASA Astrophysics Data System (ADS)

Rouhi, Nima

Carbon based materials (carbon nanotube and graphene) has been extensively researched during the past decade as one of the promising materials to be used in high performance device technology. In long term it is thought that they may replace digital and/or analog electronic devices, due to their size, near-ballistic transport, and high stability. However, a more realistic point of insertion into market may be the printed nanoelectronic circuits and sensors. These applications include printed circuits for flexible electronics and displays, large-scale bendable electrical contacts, bio-membranes and bio sensors, RFID tags, etc. In order to obtain high performance thin film transistors (as the basic building block of electronic circuits) one should be able to manufacture dense arrays of all semiconducting nanotubes. Besides, graphene synthesize and transfer technology is in its infancy and there is plenty of room to improve the current techniques. To realize the performance of nanotube and graphene films in such systems, we need to economically fabricate large-scale devices based on these materials. Following that the performance control over such devices should also be considered for future design variations for broad range of applications. Here we have first investigated carbon nanotube ink as the base material for our devices. The primary ink used consisted of both metallic and semiconducting nanotubes which resulted in networks suitable for moderate-resistivity electrical connections (such as interconnects) and rfmatching circuits. Next, purified all-semiconducting nanotube ink was used to fabricate waferscale, high performance (high mobility, and high on/off ratio) thin film transistors for printed electronic applications. The parameters affecting device performance were studied in detail to establish a roadmap for the future of purified nanotube ink printed thin film transistors. The trade of between mobility and on/off ratio of such devices was studied and the effect of nanotube network density was explained in detail. On the other hand, graphene transfer technology was explored here as well. Annealing techniques were utilized to deposit clean graphene on arbitrary substrates. Raman spectroscopy and Raman data analysis was used to confirm the clean process. Furthermore, suspended graphene membrane was fabricated using single and multi-layer graphene films. This can make a major impact on graphene based transistors and bio-nano sensors technology.

Retrofit device to improve vapor compression cooling system performance by dynamic blower speed modulation

DOEpatents

Roth, Robert Paul; Hahn, David C.; Scaringe, Robert P.

2015-12-08

A device and method are provided to improve performance of a vapor compression system using a retrofittable control board to start up the vapor compression system with the evaporator blower initially set to a high speed. A baseline evaporator operating temperature with the evaporator blower operating at the high speed is recorded, and then the device detects if a predetermined acceptable change in evaporator temperature has occurred. The evaporator blower speed is reduced from the initially set high speed as long as there is only a negligible change in the measured evaporator temperature and therefore a negligible difference in the compressor's power consumption so as to obtain a net increase in the Coefficient of Performance.

Collection-limited theory interprets the extraordinary response of single semiconductor organic solar cells

DOE PAGES

Ray, Biswajit; Baradwaj, Aditya G.; Khan, Mohammad Ryyan; ...

2015-08-19

The bulk heterojunction (BHJ) organic photovoltaic (OPV) architecture has dominated the literature due to its ability to be implemented in devices with relatively high efficiency values. However, a simpler device architecture based on a single organic semiconductor (SS-OPV) offers several advantages: it obviates the need to control the highly system-dependent nanoscale BHJ morphology, and therefore, would allow the use of broader range of organic semiconductors. Unfortunately, the photocurrent in standard SS-OPV devices is typically very low, which generally is attributed to inefficient charge separation of the photogenerated excitons. In this paper, we show that the short-circuit current density from SS-OPVmore » devices can be enhanced significantly (~100-fold) through the use of inverted device configurations, relative to a standard OPV device architecture. This result suggests that charge generation may not be the performance bottleneck in OPV device operation. Instead, poor charge collection, caused by defect-induced electric field screening, is most likely the primary performance bottleneck in regular-geometry SS-OPV cells. We justify this hypothesis by: ( i) detailed numerical simulations, ( ii) electrical characterization experiments of functional SS-OPV devices using multiple polymers as active layer materials, and ( iii) impedance spectroscopy measurements. Furthermore, we show that the collection-limited photocurrent theory consistently interprets typical characteristics of regular SS-OPV devices. Finally, these insights should encourage the design and OPV implementation of high-purity, high-mobility polymers, and other soft materials that have shown promise in organic field-effect transistor applications, but have not performed well in BHJ OPV devices, wherein they adopt less-than-ideal nanostructures when blended with electron-accepting materials.« less

Optical interconnection networks for high-performance computing systems

NASA Astrophysics Data System (ADS)

Biberman, Aleksandr; Bergman, Keren

2012-04-01

Enabled by silicon photonic technology, optical interconnection networks have the potential to be a key disruptive technology in computing and communication industries. The enduring pursuit of performance gains in computing, combined with stringent power constraints, has fostered the ever-growing computational parallelism associated with chip multiprocessors, memory systems, high-performance computing systems and data centers. Sustaining these parallelism growths introduces unique challenges for on- and off-chip communications, shifting the focus toward novel and fundamentally different communication approaches. Chip-scale photonic interconnection networks, enabled by high-performance silicon photonic devices, offer unprecedented bandwidth scalability with reduced power consumption. We demonstrate that the silicon photonic platforms have already produced all the high-performance photonic devices required to realize these types of networks. Through extensive empirical characterization in much of our work, we demonstrate such feasibility of waveguides, modulators, switches and photodetectors. We also demonstrate systems that simultaneously combine many functionalities to achieve more complex building blocks. We propose novel silicon photonic devices, subsystems, network topologies and architectures to enable unprecedented performance of these photonic interconnection networks. Furthermore, the advantages of photonic interconnection networks extend far beyond the chip, offering advanced communication environments for memory systems, high-performance computing systems, and data centers.

Temperature dependent simulation of diamond depleted Schottky PIN diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti

2016-06-14

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond.more » The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.« less

Stretchable, Twisted Conductive Microtubules for Wearable Computing, Robotics, Electronics, and Healthcare.

PubMed

Do, Thanh Nho; Visell, Yon

2017-05-11

Stretchable and flexible multifunctional electronic components, including sensors and actuators, have received increasing attention in robotics, electronics, wearable, and healthcare applications. Despite advances, it has remained challenging to design analogs of many electronic components to be highly stretchable, to be efficient to fabricate, and to provide control over electronic performance. Here, we describe highly elastic sensors and interconnects formed from thin, twisted conductive microtubules. These devices consist of twisted assemblies of thin, highly stretchable (>400%) elastomer tubules filled with liquid conductor (eutectic gallium indium, EGaIn), and fabricated using a simple roller coating process. As we demonstrate, these devices can operate as multimodal sensors for strain, rotation, contact force, or contact location. We also show that, through twisting, it is possible to control their mechanical performance and electronic sensitivity. In extensive experiments, we have evaluated the capabilities of these devices, and have prototyped an array of applications in several domains of stretchable and wearable electronics. These devices provide a novel, low cost solution for high performance stretchable electronics with broad applications in industry, healthcare, and consumer electronics, to emerging product categories of high potential economic and societal significance.

Performance of 4x5120 Element Visible and 2x2560 Element Shortwave Infrared Multispectral Focal Planes

NASA Astrophysics Data System (ADS)

Tower, J. R.; Cope, A. D.; Pellion, L. E.; McCarthy, B. M.; Strong, R. T.; Kinnard, K. F.; Moldovan, A. G.; Levine, P. A.; Elabd, H.; Hoffman, D. M.

1985-12-01

Performance measurements of two Multispectral Linear Array focal planes are presented. Both pushbroom sensors have been developed for application in remote sensing instruments. A buttable, four-spectral-band, linear-format charge coupled device (CCD) and a but-table, two-spectral-band, linear-format, shortwave infrared charge coupled device (IRCCD) have been developed under NASA funding. These silicon integrated circuits may be butted end to end to provide very-high-resolution multispectral focal planes. The visible CCD is organized as four sensor lines of 1024 pixels each. Each line views the scene in a different spectral window defined by integral optical bandpass filters. A prototype focal plane with five devices, providing 4x5120-pixel resolution has been demonstrated. The high quantum efficiency of the backside-illuminated CCD technology provides excellent signal-to-noise performance and unusually high MTF across the entire visible and near-IR spectrum. The shortwave infrared (SWIR) sensor is organized as two line sensors of 512 detectors each. The SWIR (1-2.5 μm) spectral windows may be defined by bandpass filters placed in close proximity to the devices. The dual-band sensor consists of Schottky barrier detectors read out by CCD multiplexers. This monolithic sensor operates at 125°K with radiometric performance. A prototype five-device focal plane providing 2x2560 detectors has been demonstrated. The devices provide very high uniformity, and excellent MTF across the SWIR band.

Thermoelectric materials and devices

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor); Talcott, Noel A. (Inventor)

2011-01-01

New thermoelectric materials comprise highly [111]-oriented twinned group IV alloys on the basal plane of trigonal substrates, which exhibit a high thermoelectric figure of merit and good material performance, and devices made with these materials.

Progress in the development and integration of fluid flow control tools in paper microfluidics.

PubMed

Fu, Elain; Downs, Corey

2017-02-14

Paper microfluidics is a rapidly growing subfield of microfluidics in which paper-like porous materials are used to create analytical devices. There is a need for higher performance field-use tests for many application domains including human disease diagnosis, environmental monitoring, and veterinary medicine. A key factor in creating high performance paper-based devices is the ability to manipulate fluid flow within the devices. This critical review is focused on the progress that has been made in (i) the development of fluid flow control tools and (ii) the integration of those tools into paper microfluidic devices. Further, we strive to be comprehensive in our presentation and provide historical context through discussion and performance comparisons, when possible, of both relevant earlier work and recent work. Finally, we discuss the major areas of focus for fluid flow methods development to advance the potential of paper microfluidics for high-performance field applications.

Outsourcing Security Services for Low Performance Portable Devices

NASA Astrophysics Data System (ADS)

Szentgyörgyi, Attila; Korn, András

The number of portable devices using wireless network technologies is on the rise. Some of these devices are incapable of, or at a disadvantage at using secure Internet services, because secure communication often requires comparatively high computing capacity. In this paper, we propose a solution which can be used to offer secure network services for low performance portable devices without severely degrading data transmission rates. We also show that using our approach these devices can utilize some secure network services which were so far unavailable to them due to a lack of software support. In order to back up our claims, we present performance measurement results obtained in a test network.

Topology-optimized metasurfaces: impact of initial geometric layout.

PubMed

Yang, Jianji; Fan, Jonathan A

2017-08-15

Topology optimization is a powerful iterative inverse design technique in metasurface engineering and can transform an initial layout into a high-performance device. With this method, devices are optimized within a local design phase space, making the identification of suitable initial geometries essential. In this Letter, we examine the impact of initial geometric layout on the performance of large-angle (75 deg) topology-optimized metagrating deflectors. We find that when conventional metasurface designs based on dielectric nanoposts are used as initial layouts for topology optimization, the final devices have efficiencies around 65%. In contrast, when random initial layouts are used, the final devices have ultra-high efficiencies that can reach 94%. Our numerical experiments suggest that device topologies based on conventional metasurface designs may not be suitable to produce ultra-high-efficiency, large-angle metasurfaces. Rather, initial geometric layouts with non-trivial topologies and shapes are required.

Photo-Detection on Narrow-Bandgap High-Mobility 2D Semiconductors

NASA Astrophysics Data System (ADS)

Charnas, Adam; Qiu, Gang; Deng, Yexin; Wang, Yixiu; Du, Yuchen; Yang, Lingming; Wu, Wenzhuo; Ye, Peide

Photo-detection and energy harvesting device concepts have been demonstrated widely in 2D materials such as graphene, TMDs, and black phosphorus. In this work, we demonstrate anisotropic photo-detection achieved using devices fabricated from hydrothermally grown narrow-bandgap high-mobility 2D semiconductor. Back-gated FETs were fabricated by transferring the 2D flakes onto a Si/SiO2 substrate and depositing various metal contacts across the flakes to optimize the access resistance for optoelectronic devices. Photo-responsivity was measured and mapped by slightly biasing the devices and shining a laser spot at different locations of the device to observe and map the resulting photo-generated current. Optimization of the Schottky barrier height for both n and p at the metal-2D interfaces using asymmetric contact engineering was performed to improve device performance.

High-voltage compatible, full-depleted CCD

DOEpatents

Holland, Stephen Edward

2007-09-18

A charge coupled device for detecting electromagnetic and particle radiation is described. The device includes a high-resistivity semiconductor substrate, buried channel regions, gate electrode circuitry, and amplifier circuitry. For good spatial resolution and high performance, especially when operated at high voltages with full or nearly full depletion of the substrate, the device can also include a guard ring positioned near channel regions, a biased channel stop, and a biased polysilicon electrode over the channel stop.

Characteristics of enhanced-mode AlGaN/GaN MIS HEMTs for millimeter wave applications

NASA Astrophysics Data System (ADS)

Lee, Jong-Min; Ahn, Ho-Kyun; Jung, Hyun-Wook; Shin, Min Jeong; Lim, Jong-Won

2017-09-01

In this paper, an enhanced-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) was developed by using 4-inch GaN HEMT process. We designed and fabricated Emode HEMTs and characterized device performance. To estimate the possibility of application for millimeter wave applications, we focused on the high frequency performance and power characteristics. To shift the threshold voltage of HEMTs we applied the Al2O3 insulator to the gate structure and adopted the gate recess technique. To increase the frequency performance the e-beam lithography technique was used to define the 0.15 um gate length. To evaluate the dc and high frequency performance, electrical characterization was performed. The threshold voltage was measured to be positive value by linear extrapolation from the transfer curve. The device leakage current is comparable to that of the depletion mode device. The current gain cut-off frequency and the maximum oscillation frequency of the E-mode device with a total gate width of 150 um were 55 GHz and 168 GHz, respectively. To confirm the power performance for mm-wave applications the load-pull test was performed. The measured power density of 2.32 W/mm was achieved at frequencies of 28 and 30 GHz.

Many-junction photovoltaic device performance under non-uniform high-concentration illumination

NASA Astrophysics Data System (ADS)

Valdivia, Christopher E.; Wilkins, Matthew M.; Chahal, Sanmeet S.; Proulx, Francine; Provost, Philippe-Olivier; Masson, Denis P.; Fafard, Simon; Hinzer, Karin

2017-09-01

A parameterized 3D distributed circuit model was developed to calculate the performance of III-V solar cells and photonic power converters (PPC) with a variable number of epitaxial vertically-stacked pn junctions. PPC devices are designed with many pn junctions to realize higher voltages and to operate under non-uniform illumination profiles from a laser or LED. Performance impacts of non-uniform illumination were greatly reduced with increasing number of junctions, with simulations comparing PPC devices with 3 to 20 junctions. Experimental results using Azastra Opto's 12- and 20-junction PPC illuminated by an 845 nm diode laser show high performance even with a small gap between the PPC and optical fiber output, until the local tunnel junction limit is reached.

Transistor and memory devices based on novel organic and biomaterials

NASA Astrophysics Data System (ADS)

Tseng, Jia-Hung

Organic semiconductor devices have aroused considerable interest because of the enormous potential in many technological applications. Organic electroluminescent devices have been extensively applied in display technology. Rapid progress has also been made in transistor and memory devices. This thesis considers aspects of the transistor based on novel organic single crystals and memory devices using hybrid nanocomposites comprising polymeric/inorganic nanoparticles, and biomolecule/quantum dots. Organic single crystals represent highly ordered structures with much less imperfections compared to amorphous thin films for probing the intrinsic charge transport in transistor devices. We demonstrate that free-standing, thin organic single crystals with natural flexing ability can be fabricated as flexible transistors. We study the surface properties of the organic crystals to determine a nearly perfect surface leading to high performance transistors. The flexible transistors can maintain high performance under reversible bending conditions. Because of the high quality crystal technique, we further develop applications on organic complementary circuits and organic single crystal photovoltaics. In the second part, two aspects of memory devices are studied. We examine the charge transfer process between conjugated polymers and metal nanoparticles. This charge transfer process is essential for the conductance switching in nanoseconds to induce the memory effect. Under the reduction condition, the charge transfer process is eliminated as well as the memory effect, raising the importance of coupling between conjugated systems and nanoparticle accepters. The other aspect of memory devices focuses on the interaction of virus biomolecules with quantum dots or metal nanoparticles in the devices. We investigate the impact of memory function on the hybrid bio-inorganic system. We perform an experimental analysis of the charge storage activation energy in tobacco mosaic virus with platinum nanoparticles. It is established that the effective barrier height in the materials systems needs to be further engineered in order to have sufficiently long retention times. Finally other novel architectures such as negative differential resistance devices and high density memory arrays are investigated for their influence on memory technology.

New Concentric Electrode Metal-Semiconductor-Metal Photodetectors

NASA Technical Reports Server (NTRS)

Towe, Elias

1996-01-01

A new metal-semiconductor-metal (MSM) photodetector geometry is proposed. The new device has concentric metal electrodes which exhibit a high degree of symmetry and a design flexibility absent in the conventional MSM device. The concentric electrodes are biased to alternating potentials as in the conventional interdigitated device. Because of the high symmetry configuration, however, the new device also has a lower effective capacitance. This device and the conventional MSM structure are analyzed within a common theoretical framework which allows for the comparison of the important performance characteristics.

Ultrasmooth Quantum Dot Micropatterns by a Facile Controllable Liquid-Transfer Approach: Low-Cost Fabrication of High-Performance QLED.

PubMed

Zhang, Min; Hu, Binbin; Meng, Lili; Bian, Ruixin; Wang, Siyuan; Wang, Yunjun; Liu, Huan; Jiang, Lei

2018-06-26

Fabrication of a high quality quantum dot (QD) film is essentially important for a high-performance QD light emitting diode display (QLED) device. It is normally a high-cost and multiple-step solution-transfer process where large amounts of QDs were needed but with only limited usefulness. Thus, developing a simple, efficient, and low-cost approach to fabricate high-quality micropatterned QD film is urgently needed. Here, we proposed that the Chinese brush enables the controllable transfer of a QD solution directly onto a homogeneous and ultrasmooth micropatterned film in one step. It is proposed that the dynamic balance of QDs was enabled during the entire solution transfer process under the cooperative effect of Marangoni flow aroused by the asymmetric solvent evaporation and the Laplace pressure different by conical fibers. By this approach, QD nanoparticles were homogeneously transferred onto the desired area on the substrate. The as-prepared QLED devices show rather high performances with the current efficiencies of 72.38, 26.03, and 4.26 cd/A and external quantum efficiencies of 17.40, 18.96, and 6.20% for the green, red, and blue QLED devices, respectively. We envision that the result offers a low-cost, facile, and practically applicable solution-processing approach that works even in air for fabricating high-performance QLED devices.

High performance low voltage organic field effect transistors on plastic substrate for amplifier circuits

NASA Astrophysics Data System (ADS)

Houin, G.; Duez, F.; Garcia, L.; Cantatore, E.; Torricelli, F.; Hirsch, L.; Belot, D.; Pellet, C.; Abbas, M.

2016-09-01

The high performance air stable organic semiconductor small molecule dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) was chosen as active layer for field effect transistors built to realize flexible amplifier circuits. Initial device on rigid Si/SiO2 substrate showed appreciable performance with hysteresis-free characteristics. A number of approaches were applied to simplify the process, improve device performance and decrease the operating voltage: they include an oxide interfacial layer to decrease contact resistance; a polymer passivation layer to optimize semiconductor/dielectric interface and an anodized high-k oxide as dielectric layer for low voltage operation. The devices fabricated on plastic substrate yielded excellent electrical characteristics, showing mobility of 1.6 cm2/Vs, lack of hysteresis, operation below 5 V and on/off current ratio above 105. An OFET model based on variable ranging hopping theory was used to extract the relevant parameters from the transfer and output characteristics, which enabled us to simulate our devices achieving reasonable agreement with the measurements

On the design of a miniature haptic ring for cutaneous force feedback using shape memory alloy actuators

NASA Astrophysics Data System (ADS)

Hwang, Donghyun; Lee, Jaemin; Kim, Keehoon

2017-10-01

This paper proposes a miniature haptic ring that can display touch/pressure and shearing force to the user’s fingerpad. For practical use and wider application of the device, it is developed with the aim of achieving high wearability and mobility/portability as well as cutaneous force feedback functionality. A main body of the device is designed as a ring-shaped lightweight structure with a simple driving mechanism, and thin shape memory alloy (SMA) wires having high energy density are applied as actuating elements. Also, based on a band-type wireless control unit including a wireless data communication module, the whole device could be realized as a wearable mobile haptic device system. These features enable the device to take diverse advantages on functional performances and to provide users with significant usability. In this work, the proposed miniature haptic ring is systematically designed, and its working performances are experimentally evaluated with a fabricated functional prototype. The experimental results obviously demonstrate that the proposed device exhibits higher force-to-weight ratio than conventional finger-wearable haptic devices for cutaneous force feedback. Also, it is investigated that operational performances of the device are strongly influenced by electro-thermomechanical behaviors of the SMA actuator. In addition to the experiments for performance evaluation, we conduct a preliminary user test to assess practical feasibility and usability based on user’s qualitative feedback.

Stretchable and high-performance supercapacitors with crumpled graphene papers.

PubMed

Zang, Jianfeng; Cao, Changyong; Feng, Yaying; Liu, Jie; Zhao, Xuanhe

2014-10-01

Fabrication of unconventional energy storage devices with high stretchability and performance is challenging, but critical to practical operations of fully power-independent stretchable electronics. While supercapacitors represent a promising candidate for unconventional energy-storage devices, existing stretchable supercapacitors are limited by their low stretchability, complicated fabrication process, and high cost. Here, we report a simple and low-cost method to fabricate extremely stretchable and high-performance electrodes for supercapacitors based on new crumpled-graphene papers. Electrolyte-mediated-graphene paper bonded on a compliant substrate can be crumpled into self-organized patterns by harnessing mechanical instabilities in the graphene paper. As the substrate is stretched, the crumpled patterns unfold, maintaining high reliability of the graphene paper under multiple cycles of large deformation. Supercapacitor electrodes based on the crumpled graphene papers exhibit a unique combination of high stretchability (e.g., linear strain ~300%, areal strain ~800%), high electrochemical performance (e.g., specific capacitance ~196 F g(-1)), and high reliability (e.g., over 1000 stretch/relax cycles). An all-solid-state supercapacitor capable of large deformation is further fabricated to demonstrate practical applications of the crumpled-graphene-paper electrodes. Our method and design open a wide range of opportunities for manufacturing future energy-storage devices with desired deformability together with high performance.

Stretchable and High-Performance Supercapacitors with Crumpled Graphene Papers

NASA Astrophysics Data System (ADS)

Zang, Jianfeng; Cao, Changyong; Feng, Yaying; Liu, Jie; Zhao, Xuanhe

2014-10-01

Fabrication of unconventional energy storage devices with high stretchability and performance is challenging, but critical to practical operations of fully power-independent stretchable electronics. While supercapacitors represent a promising candidate for unconventional energy-storage devices, existing stretchable supercapacitors are limited by their low stretchability, complicated fabrication process, and high cost. Here, we report a simple and low-cost method to fabricate extremely stretchable and high-performance electrodes for supercapacitors based on new crumpled-graphene papers. Electrolyte-mediated-graphene paper bonded on a compliant substrate can be crumpled into self-organized patterns by harnessing mechanical instabilities in the graphene paper. As the substrate is stretched, the crumpled patterns unfold, maintaining high reliability of the graphene paper under multiple cycles of large deformation. Supercapacitor electrodes based on the crumpled graphene papers exhibit a unique combination of high stretchability (e.g., linear strain ~300%, areal strain ~800%), high electrochemical performance (e.g., specific capacitance ~196 F g-1), and high reliability (e.g., over 1000 stretch/relax cycles). An all-solid-state supercapacitor capable of large deformation is further fabricated to demonstrate practical applications of the crumpled-graphene-paper electrodes. Our method and design open a wide range of opportunities for manufacturing future energy-storage devices with desired deformability together with high performance.

Stretchable and High-Performance Supercapacitors with Crumpled Graphene Papers

PubMed Central

Zang, Jianfeng; Cao, Changyong; Feng, Yaying; Liu, Jie; Zhao, Xuanhe

2014-01-01

Fabrication of unconventional energy storage devices with high stretchability and performance is challenging, but critical to practical operations of fully power-independent stretchable electronics. While supercapacitors represent a promising candidate for unconventional energy-storage devices, existing stretchable supercapacitors are limited by their low stretchability, complicated fabrication process, and high cost. Here, we report a simple and low-cost method to fabricate extremely stretchable and high-performance electrodes for supercapacitors based on new crumpled-graphene papers. Electrolyte-mediated-graphene paper bonded on a compliant substrate can be crumpled into self-organized patterns by harnessing mechanical instabilities in the graphene paper. As the substrate is stretched, the crumpled patterns unfold, maintaining high reliability of the graphene paper under multiple cycles of large deformation. Supercapacitor electrodes based on the crumpled graphene papers exhibit a unique combination of high stretchability (e.g., linear strain ~300%, areal strain ~800%), high electrochemical performance (e.g., specific capacitance ~196 F g−1), and high reliability (e.g., over 1000 stretch/relax cycles). An all-solid-state supercapacitor capable of large deformation is further fabricated to demonstrate practical applications of the crumpled-graphene-paper electrodes. Our method and design open a wide range of opportunities for manufacturing future energy-storage devices with desired deformability together with high performance. PMID:25270673

Highly Efficient Multilayer Thermoelectric Devices

NASA Technical Reports Server (NTRS)

Boufelfel, Ali

2006-01-01

Multilayer thermoelectric devices now at the prototype stage of development exhibit a combination of desirable characteristics, including high figures of merit and high performance/cost ratios. These devices are capable of producing temperature differences of the order of 50 K in operation at or near room temperature. A solvent-free batch process for mass production of these state-of-the-art thermoelectric devices has also been developed. Like prior thermoelectric devices, the present ones have commercial potential mainly by virtue of their utility as means of controlled cooling (and/or, in some cases, heating) of sensors, integrated circuits, and temperature-critical components of scientific instruments. The advantages of thermoelectric devices for such uses include no need for circulating working fluids through or within the devices, generation of little if any noise, and high reliability. The disadvantages of prior thermoelectric devices include high power consumption and relatively low coefficients of performance. The present development program was undertaken in the hope of reducing the magnitudes of the aforementioned disadvantages and, especially, obtaining higher figures of merit for operation at and near room temperature. Accomplishments of the program thus far include development of an algorithm to estimate the heat extracted by, and the maximum temperature drop produced by, a thermoelectric device; solution of the problem of exchange of heat between a thermoelectric cooler and a water-cooled copper block; retrofitting of a vacuum chamber for depositing materials by sputtering; design of masks; and fabrication of multilayer thermoelectric devices of two different designs, denoted I and II. For both the I and II designs, the thicknesses of layers are of the order of nanometers. In devices of design I, nonconsecutive semiconductor layers are electrically connected in series. Devices of design II contain superlattices comprising alternating electron-acceptor (p)-doped and electron-donor (n)-doped, nanometer- thick semiconductor layers.

Core-shell heterojunction of silicon nanowire arrays and carbon quantum dots for photovoltaic devices and self-driven photodetectors.

PubMed

Xie, Chao; Nie, Biao; Zeng, Longhui; Liang, Feng-Xia; Wang, Ming-Zheng; Luo, Linbao; Feng, Mei; Yu, Yongqiang; Wu, Chun-Yan; Wu, Yucheng; Yu, Shu-Hong

2014-04-22

Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10(3) at ±0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices.

Highly transparent supercapacitors based on ZnO/MnO2 nanostructures.

PubMed

Borysiewicz, M A; Ekielski, M; Ogorzałek, Z; Wzorek, M; Kaczmarski, J; Wojciechowski, T

2017-06-08

The recent rapid development of transparent electronics, notably displays and control circuits, requires the development of highly transparent energy storage devices, such as supercapacitors. The devices reported to date utilize carbon-based electrodes for high performance, however at the cost of their low transparency around 50%, insufficient for real transparent devices. To overcome this obstacle, in this communication highly transparent supercapacitors were fabricated based on ZnO/MnO 2 nanostructured electrodes. ZnO served as an intrinsically transparent skeleton for increasing the electrode surface, while MnO 2 nanoparticles were applied for high capacitance. Two MnO 2 synthesis routes were followed, based on the reaction of KMnO 4 with Mn(Ac) 2 and PAH, leading to the synthesis of β-MnO 2 with minority α-MnO 2 nanoparticles and amorphous MnO 2 with embedded β-MnO 2 , respectively. The devices based on such electrodes showed high capacitances of 2.6 mF cm -2 and 1.6 mF cm -2 , respectively, at a scan rate of 1 mV s -1 and capacitances of 104 μF cm -2 and 204 μF cm -2 at a very high rate of 1 V s -1 , not studied for transparent supercapacitors previously. Additionally, the Mn(Ac) 2 devices exhibited very high transparencies of 86% vs. air, far superior to other transparent energy storage devices reported with similar charge storage properties. This high device performance was achieved with a non-acidic LiCl gel electrolyte, reducing corrosion and handling risks associated with conventional highly concentrated acidic electrolytes, enabling applications in safe, wearable, transparent devices.

Liquid crystals for organic transistors (Conference Presentation)

NASA Astrophysics Data System (ADS)

Hanna, Jun-ichi; Iino, Hiroaki

2016-09-01

Liquid crystals are a new type of organic semiconductors exhibiting molecular orientation in self-organizing manner, and have high potential for device applications. In fact, various device applications have been proposed so far, including photosensors, solar cells, light emitting diodes, field effect transistors, and so on.. However, device performance in those fabricated with liquid crystals is less than those of devices fabricated with conventional materials in spite of unique features of liquid crystals. Here we discuss how we can utilize the liquid crystallinity in organic transistors and how we can overcome conventional non-liquid crystalline organic transistor materials. Then, we demonstrate high performance organic transistors fabricated with a smectic E liquid crystal of Ph-BTBT-10, which show high mobility of over 10cm2/Vs and high thermal durability of over 200oC in OFETs fabricated with its spin-coated polycrystalline thin films.

Architectures for Improved Organic Semiconductor Devices

NASA Astrophysics Data System (ADS)

Beck, Jonathan H.

Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes, semiconductors and substrates compatible with low-temperature, flexible, and oxygenated and aromatic solvent-free fabrication. Materials and processes must be capable of future high volume production in order to enable low costs. In this thesis we explore several techniques to improve organic semiconductor device performance and enable new fabrication processes. In Chapter 2, I describe the integration of sub-optical-wavelength nanostructured electrodes that improve fill factor and power conversion efficiency in organic photovoltaic devices. Photovoltaic fill factor performance is one of the primary challenges facing organic photovoltaics because most organic semiconductors have poor charge mobility. Our electrical and optical measurements and simulations indicate that nanostructured electrodes improve charge extraction in organic photovoltaics. In Chapter 3, I describe a general method for maximizing the efficiency of organic photovoltaic devices by simultaneously optimizing light absorption and charge carrier collection. We analyze the potential benefits of light trapping strategies for maximizing the overall power conversion efficiency of organic photovoltaic devices. This technique may be used to improve organic photovoltaic materials with low absorption, or short exciton diffusion and carrier-recombination lengths, opening up the device design space. In Chapter 4, I describe a process for high-quality graphene transfer onto chemically sensitive, weakly interacting organic semiconductor thin-films. Graphene is a promising flexible and highly transparent electrode for organic electronics; however, transferring graphene films onto organic semiconductor devices was previously impossible. We demonstrate a new transfer technique based on an elastomeric stamp coated with an fluorinated polymer release layer. We fabricate three classes of organic semiconductor devices: field effect transistors without high temperature annealing, transparent organic light-emitting diodes, and transparent small-molecule organic photovoltaic devices.

Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application

PubMed Central

Lee, Eunha; Benayad, Anass; Shin, Taeho; Lee, HyungIk; Ko, Dong-Su; Kim, Tae Sang; Son, Kyoung Seok; Ryu, Myungkwan; Jeon, Sanghun; Park, Gyeong-Su

2014-01-01

Interest in oxide semiconductors stems from benefits, primarily their ease of process, relatively high mobility (0.3–10 cm2/vs), and wide-bandgap. However, for practical future electronic devices, the channel mobility should be further increased over 50 cm2/vs and wide-bandgap is not suitable for photo/image sensor applications. The incorporation of nitrogen into ZnO semiconductor can be tailored to increase channel mobility, enhance the optical absorption for whole visible light and form uniform micro-structure, satisfying the desirable attributes essential for high performance transistor and visible light photo-sensors on large area platform. Here, we present electronic, optical and microstructural properties of ZnON, a composite of Zn3N2 and ZnO. Well-optimized ZnON material presents high mobility exceeding 100 cm2V−1s−1, the band-gap of 1.3 eV and nanocrystalline structure with multiphase. We found that mobility, microstructure, electronic structure, band-gap and trap properties of ZnON are varied with nitrogen concentration in ZnO. Accordingly, the performance of ZnON-based device can be adjustable to meet the requisite of both switch device and image-sensor potentials. These results demonstrate how device and material attributes of ZnON can be optimized for new device strategies in display technology and we expect the ZnON will be applicable to a wide range of imaging/display devices. PMID:24824778

High power laser downhole cutting tools and systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zediker, Mark S; Rinzler, Charles C; Faircloth, Brian O

Downhole cutting systems, devices and methods for utilizing 10 kW or more laser energy transmitted deep into the earth with the suppression of associated nonlinear phenomena. Systems and devices for the laser cutting operations within a borehole in the earth. These systems and devices can deliver high power laser energy down a deep borehole, while maintaining the high power to perform cutting operations in such boreholes deep within the earth.

High-performance indium gallium phosphide/gallium arsenide heterojunction bipolar transistors

NASA Astrophysics Data System (ADS)

Ahmari, David Abbas

Heterojunction bipolar transistors (HBTs) have demonstrated the high-frequency characteristics as well as the high linearity, gain, and power efficiency necessary to make them attractive for a variety of applications. Specific applications for which HBTs are well suited include amplifiers, analog-to-digital converters, current sources, and optoelectronic integrated circuits. Currently, most commercially available HBT-based integrated circuits employ the AlGaAs/GaAs material system in applications such as a 4-GHz gain block used in wireless phones. As modern systems require higher-performance and lower-cost devices, HBTs utilizing the newer, InGaP/GaAs and InP/InGaAs material systems will begin to dominate the HBT market. To enable the widespread use of InGaP/GaAs HBTs, much research on the fabrication, performance, and characterization of these devices is required. This dissertation will discuss the design and implementation of high-performance InGaP/GaAs HBTs as well as study HBT device physics and characterization.

Ion-Transport Design for High-Performance Na+-Based Electrochromics.

PubMed

Li, Ran; Li, Kerui; Wang, Gang; Li, Lei; Zhang, Qiangqiang; Yan, Jinhui; Chen, Yao; Zhang, Qinghong; Hou, Chengyi; Li, Yaogang; Wang, Hongzhi

2018-04-24

Sodium ion (Na + )-based electrochemical systems have been extensively investigated in batteries and supercapacitors and also can be quality candidates for electrochromic (EC) devices. However, poor diffusion kinetics and severe EC performance degradation occur during the intercalation/deintercalation processes because the ionic radii of Na + are larger than those of conventional intercalation ions. Here, through intentional design of ion-transport channels in metal-organic frameworks (MOFs), Na + serves as an efficient intercalation ion for incorporation into a nanostructured electrode with a high diffusion coefficient of approximately 10 -8 cm 2 s -1 . As a result, the well-designed MOF-based EC device demonstrates desirable Na + EC performance, including fast switching speed, multicolor switching, and high stability. A smart "quick response code" display is fabricated using a mask-free laser writing method for application in the "Internet of Things". In addition, the concept of ion transport pathway design can be widely adopted for fabricating high-performance ion intercalation materials and devices for consumer electronics.

Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons.

PubMed

Llinas, Juan Pablo; Fairbrother, Andrew; Borin Barin, Gabriela; Shi, Wu; Lee, Kyunghoon; Wu, Shuang; Yong Choi, Byung; Braganza, Rohit; Lear, Jordan; Kau, Nicholas; Choi, Wonwoo; Chen, Chen; Pedramrazi, Zahra; Dumslaff, Tim; Narita, Akimitsu; Feng, Xinliang; Müllen, Klaus; Fischer, Felix; Zettl, Alex; Ruffieux, Pascal; Yablonovitch, Eli; Crommie, Michael; Fasel, Roman; Bokor, Jeffrey

2017-09-21

Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L ch  ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (I on  > 1 μA at V d  = -1 V) and high I on /I off  ~ 10 5 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.Graphene nanoribbons show promise for high-performance field-effect transistors, however they often suffer from short lengths and wide band gaps. Here, the authors use a bottom-up synthesis approach to fabricate 9- and 13-atom wide ribbons, enabling short-channel transistors with 10 5 on-off current ratio.

Fabric Organic Electrochemical Transistors for Biosensors.

PubMed

Yang, Anneng; Li, Yuanzhe; Yang, Chenxiao; Fu, Ying; Wang, Naixiang; Li, Li; Yan, Feng

2018-06-01

Flexible fabric biosensors can find promising applications in wearable electronics. However, high-performance fabric biosensors have been rarely reported due to many special requirements in device fabrication. Here, the preparation of organic electrochemical transistors (OECTs) on Nylon fibers is reported. By introducing metal/conductive polymer multilayer electrodes on the fibers, the OECTs show very stable performance during bending tests. The devices with functionalized gates are successfully used as various biosensors with high sensitivity and selectivity. The fiber-based OECTs are woven together with cotton yarns successfully by using a conventional weaving machine, resulting in flexible and stretchable fabric biosensors with high performance. The fabric sensors show much more stable signals in the analysis of moving aqueous solutions than planar devices due to a capillary effect in fabrics. The fabric devices are integrated in a diaper and remotely operated by using a mobile phone, offering a unique platform for convenient wearable healthcare monitoring. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High Per formance and Flexible Supercapacitors based on Carbonized Bamboo Fibers for Wide Temperature Applications

PubMed Central

Zequine, Camila; Ranaweera, C. K.; Wang, Z.; Singh, Sweta; Tripathi, Prashant; Srivastava, O. N.; Gupta, Bipin Kumar; Ramasamy, K.; Kahol, P. K.; Dvornic, P. R.; Gupta, Ram K.

2016-01-01

High performance carbonized bamboo fibers were synthesized for a wide range of temperature dependent energy storage applications. The structural and electrochemical properties of the carbonized bamboo fibers were studied for flexible supercapacitor applications. The galvanostatic charge-discharge studies on carbonized fibers exhibited specific capacity of ~510F/g at 0.4 A/g with energy density of 54 Wh/kg. Interestingly, the carbonized bamboo fibers displayed excellent charge storage stability without any appreciable degradation in charge storage capacity over 5,000 charge-discharge cycles. The symmetrical supercapacitor device fabricated using these carbonized bamboo fibers exhibited an areal capacitance of ~1.55 F/cm2 at room temperature. In addition to high charge storage capacity and cyclic stability, the device showed excellent flexibility without any degradation to charge storage capacity on bending the electrode. The performance of the supercapacitor device exhibited ~65% improvement at 70 °C compare to that at 10 °C. Our studies suggest that carbonized bamboo fibers are promising candidates for stable, high performance and flexible supercapacitor devices. PMID:27546225

High Per formance and Flexible Supercapacitors based on Carbonized Bamboo Fibers for Wide Temperature Applications.

PubMed

Zequine, Camila; Ranaweera, C K; Wang, Z; Singh, Sweta; Tripathi, Prashant; Srivastava, O N; Gupta, Bipin Kumar; Ramasamy, K; Kahol, P K; Dvornic, P R; Gupta, Ram K

2016-08-22

High performance carbonized bamboo fibers were synthesized for a wide range of temperature dependent energy storage applications. The structural and electrochemical properties of the carbonized bamboo fibers were studied for flexible supercapacitor applications. The galvanostatic charge-discharge studies on carbonized fibers exhibited specific capacity of ~510F/g at 0.4 A/g with energy density of 54 Wh/kg. Interestingly, the carbonized bamboo fibers displayed excellent charge storage stability without any appreciable degradation in charge storage capacity over 5,000 charge-discharge cycles. The symmetrical supercapacitor device fabricated using these carbonized bamboo fibers exhibited an areal capacitance of ~1.55 F/cm(2) at room temperature. In addition to high charge storage capacity and cyclic stability, the device showed excellent flexibility without any degradation to charge storage capacity on bending the electrode. The performance of the supercapacitor device exhibited ~65% improvement at 70 °C compare to that at 10 °C. Our studies suggest that carbonized bamboo fibers are promising candidates for stable, high performance and flexible supercapacitor devices.

High Per formance and Flexible Supercapacitors based on Carbonized Bamboo Fibers for Wide Temperature Applications

NASA Astrophysics Data System (ADS)

Zequine, Camila; Ranaweera, C. K.; Wang, Z.; Singh, Sweta; Tripathi, Prashant; Srivastava, O. N.; Gupta, Bipin Kumar; Ramasamy, K.; Kahol, P. K.; Dvornic, P. R.; Gupta, Ram K.

2016-08-01

High performance carbonized bamboo fibers were synthesized for a wide range of temperature dependent energy storage applications. The structural and electrochemical properties of the carbonized bamboo fibers were studied for flexible supercapacitor applications. The galvanostatic charge-discharge studies on carbonized fibers exhibited specific capacity of ~510F/g at 0.4 A/g with energy density of 54 Wh/kg. Interestingly, the carbonized bamboo fibers displayed excellent charge storage stability without any appreciable degradation in charge storage capacity over 5,000 charge-discharge cycles. The symmetrical supercapacitor device fabricated using these carbonized bamboo fibers exhibited an areal capacitance of ~1.55 F/cm2 at room temperature. In addition to high charge storage capacity and cyclic stability, the device showed excellent flexibility without any degradation to charge storage capacity on bending the electrode. The performance of the supercapacitor device exhibited ~65% improvement at 70 °C compare to that at 10 °C. Our studies suggest that carbonized bamboo fibers are promising candidates for stable, high performance and flexible supercapacitor devices.

Analysis of high-k spacer on symmetric underlap DG-MOSFET with Gate Stack architecture

NASA Astrophysics Data System (ADS)

Das, Rahul; Chakraborty, Shramana; Dasgupta, Arpan; Dutta, Arka; Kundu, Atanu; Sarkar, Chandan K.

2016-09-01

This paper shows the systematic study of underlap double gate (U-DG) NMOSFETs with Gate Stack (GS) under the influence of high-k spacers. In highly scaled devices, underlap is used at the Source and Drain side so as to reduce the short channel effects (SCE's), however, it significantly reduces the on current due to the increased channel resistance. To overcome these drawbacks, the use of high-k spacers is projected as one of the remedies. In this paper, the analog performance of the devices is studied on the basis of parameters like transconductance (gm), transconductance generation factor (gm/Id) and intrinsic gain (gmro). The RF performance is analyzed on the merits of intrinsic capacitance (Cgd, Cgs), resistance (Rgd, Rgs), transport delay (τm), inductance (Lsd), cutoff frequency (fT), and the maximum frequency of oscillation (fmax). The circuit performance of the devices are studied by implementing the device as the driver MOSFET in a Single Stage Common Source Amplifier. The Gain Bandwidth Product (GBW) has been analyzed from the frequency response of the circuit.

Stacking multiple connecting functional materials in tandem organic light-emitting diodes

PubMed Central

Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

2017-01-01

Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency. PMID:28225028

Stacking multiple connecting functional materials in tandem organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

2017-02-01

Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency.

Germanium Based Field-Effect Transistors: Challenges and Opportunities

PubMed Central

Goley, Patrick S.; Hudait, Mantu K.

2014-01-01

The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed. PMID:28788569

High-performance all-printed amorphous oxide FETs and logics with electronically compatible electrode/ channel interface.

PubMed

Sharma, Bhupendra Kumar; Stoesser, Anna; Mondal, Sandeep Kumar; Garlapati, Suresh K; Fawey, Mohammed H; Chakravadhanula, Venkata Sai Kiran; Kruk, Robert; Hahn, Horst; Dasgupta, Subho

2018-06-12

Oxide semiconductors typically show superior device performance compared to amorphous silicon or organic counterparts, especially, when they are physical vapor deposited. However, it is not easy to reproduce identical device characteristics when the oxide field-effect transistors (FETs) are solution-processed/ printed; the level of complexity further intensifies with the need to print the passive elements as well. Here, we developed a protocol for designing the most electronically compatible electrode/ channel interface based on the judicious material selection. Exploiting this newly developed fabrication schemes, we are now able to demonstrate high-performance all-printed FETs and logic circuits using amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor, indium tin oxide (ITO) as electrodes and composite solid polymer electrolyte as the gate insulator. Interestingly, all-printed FETs demonstrate an optimal electrical performance in terms of threshold voltages and device mobility and may very well be compared with devices fabricated using sputtered ITO electrodes. This observation originates from the selection of electrode/ channel materials from the same transparent semiconductor oxide family, resulting in the formation of In-Sn-Zn-O (ITZO) based diffused a-IGZO/ ITO interface that controls doping density while ensuring high electrical performance. Compressive spectroscopic studies reveal that Sn doping mediated excellent band alignment of IGZO with ITO electrodes is responsible for the excellent device performance observed. All-printed n-MOS based logic circuits have also been demonstrated towards new-generation portable electronics.

High-Performance Flexible Perovskite Solar Cells on Ultrathin Glass: Implications of the TCO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dou, Benjia; Miller, Elisa M.; Christians, Jeffrey A.

For halide perovskite solar cells (PSCs) to fulfill their vast potential for combining low-cost, high efficiency, and high throughput production they must be scaled using a truly transformative method, such as roll-to-roll processing. Bringing this reality closer to fruition, the present work demonstrates flexible perovskite solar cells with 18.1% power conversion efficiency on flexible Willow Glass substrates. Here, we highlight the importance of the transparent conductive oxide (TCO) layers on device performance by studying various TCOs. And while tin-doped indium oxide (ITO) and indium zinc oxide (IZO) based PSC devices demonstrate high photovoltaic performances, aluminum-doped zinc oxide (AZO) based devicesmore » underperformed in all device parameters. Analysis of X-ray photoemission spectroscopy data shows that the stoichiometry of the perovskite film surface changes dramatically when it is fabricated on AZO, demonstrating the importance of the substrate in perovskite film formation.« less

High-Performance Flexible Perovskite Solar Cells on Ultrathin Glass: Implications of the TCO

DOE PAGES

Dou, Benjia; Miller, Elisa M.; Christians, Jeffrey A.; ...

2017-09-27

For halide perovskite solar cells (PSCs) to fulfill their vast potential for combining low-cost, high efficiency, and high throughput production they must be scaled using a truly transformative method, such as roll-to-roll processing. Bringing this reality closer to fruition, the present work demonstrates flexible perovskite solar cells with 18.1% power conversion efficiency on flexible Willow Glass substrates. Here, we highlight the importance of the transparent conductive oxide (TCO) layers on device performance by studying various TCOs. And while tin-doped indium oxide (ITO) and indium zinc oxide (IZO) based PSC devices demonstrate high photovoltaic performances, aluminum-doped zinc oxide (AZO) based devicesmore » underperformed in all device parameters. Analysis of X-ray photoemission spectroscopy data shows that the stoichiometry of the perovskite film surface changes dramatically when it is fabricated on AZO, demonstrating the importance of the substrate in perovskite film formation.« less

SiC Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1998-01-01

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Silicon Carbide Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2006-01-01

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Pilot production and testing of high efficiency wraparound contact solar cells

NASA Technical Reports Server (NTRS)

Gillanders, M.

1981-01-01

Modifications were made to the process sequence until a device capable of high performance and satisfactory processing yields could be fabricated on a production line. Pilot production resulted in a 2 x 4 cm screen printed dielectric wraparound contact solar cell with average 28 C, Air Mass Zero (AMO) conversion efficiencies of 14.2% and reasonable process yields. This high performance was obtained with two different back contact configurations, making the device acceptable for many applications.

Qualification of Laser Diode Arrays for Mercury Laser Altimeter

NASA Technical Reports Server (NTRS)

Stephen, Mark; Vasilyev, Aleksey; Schafer, John; Allan, Graham R.

2004-01-01

NASA's requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. Performance of Quasi-CW, High-power, laser diode arrays under extended use is presented. We report the optical power over several hundred million pulse operation and the effect of power cycling and temperature cycling of the laser diode arrays. Data on the initial characterization of the devices is also presented.

Nanocrystal grain growth and device architectures for high-efficiency CdTe ink-based photovoltaics.

PubMed

Crisp, Ryan W; Panthani, Matthew G; Rance, William L; Duenow, Joel N; Parilla, Philip A; Callahan, Rebecca; Dabney, Matthew S; Berry, Joseph J; Talapin, Dmitri V; Luther, Joseph M

2014-09-23

We study the use of cadmium telluride (CdTe) nanocrystal colloids as a solution-processable "ink" for large-grain CdTe absorber layers in solar cells. The resulting grain structure and solar cell performance depend on the initial nanocrystal size, shape, and crystal structure. We find that inks of predominantly wurtzite tetrapod-shaped nanocrystals with arms ∼5.6 nm in diameter exhibit better device performance compared to inks composed of smaller tetrapods, irregular faceted nanocrystals, or spherical zincblende nanocrystals despite the fact that the final sintered film has a zincblende crystal structure. Five different working device architectures were investigated. The indium tin oxide (ITO)/CdTe/zinc oxide structure leads to our best performing device architecture (with efficiency >11%) compared to others including two structures with a cadmium sulfide (CdS) n-type layer typically used in high efficiency sublimation-grown CdTe solar cells. Moreover, devices without CdS have improved response at short wavelengths.

High-Performance Sensors Based on Resistance Fluctuations of Single-Layer-Graphene Transistors.

PubMed

Amin, Kazi Rafsanjani; Bid, Aveek

2015-09-09

One of the most interesting predicted applications of graphene-monolayer-based devices is as high-quality sensors. In this article, we show, through systematic experiments, a chemical vapor sensor based on the measurement of low-frequency resistance fluctuations of single-layer-graphene field-effect-transistor devices. The sensor has extremely high sensitivity, very high specificity, high fidelity, and fast response times. The performance of the device using this scheme of measurement (which uses resistance fluctuations as the detection parameter) is more than 2 orders of magnitude better than a detection scheme in which changes in the average value of the resistance is monitored. We propose a number-density-fluctuation-based model to explain the superior characteristics of a noise-measurement-based detection scheme presented in this article.

Rapid, all dry microfabrication of three-dimensional Co3O4/Pt nanonetworks for high-performance microsupercapacitors.

PubMed

Ma, Xinyu; Feng, Shuxuan; He, Liang; Yan, Mengyu; Tian, Xiaocong; Li, Yanxi; Tang, Chunjuan; Hong, Xufeng; Mai, Liqiang

2017-08-17

On-chip electrochemical energy storage devices have attracted growing attention due to the decreasing size of electronic devices. Various approaches have been applied for constructing the microsupercapacitors. However, the microfabrication of high-performance microsupercapacitors by conventional and fully compatible semiconductor microfabrication technologies is still a critical challenge. Herein, unique three-dimensional (3D) Co 3 O 4 nanonetwork microelectrodes formed by the interconnection of Co 3 O 4 nanosheets are constructed by controllable physical vapor deposition combined with rapid thermal annealing. This construction process is an all dry and rapid (≤5 minutes) procedure. Afterward, by sputtering highly electrically conductive Pt nanoparticles on the microelectrodes, the 3D Co 3 O 4 /Pt nanonetworks based microsupercapacitor is fabricated, showing a high volume capacitance (35.7 F cm -3 ) at a scan rate of 20 mV s -1 due to the unique interconnected structures, high electrical conductivity and high surface area of the microelectrodes. This microfabrication process is also used to construct high-performance flexible microsupercapacitors, and it can be applied in the construction of wearable devices. The proposed strategy is completely compatible with the current semiconductor microfabrication and shows great potential in the applications of the large-scale integration of micro/nano and wearable devices.

Ab initio modeling of transport and thermodynamic stability for hafnia memristive devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, Xiaoliang; Rungger, Ivan; Zapol, Peter

HfO 2-based memristive switching devices are currently under intensive investigation due to their high performance and mature fabrication techniques. However, several critical issues have to be addressed to bring them from lab to market. We have recently looked into two important issues with the use of density functional theory methods. One is the wide distribution of device resistance in off-states. We have modeled the switching process of a Pt-HfO 2-Pt structure for which quantized conductance was observed. Oxygen atoms moving inside a conductive oxygen vacancy filament divide the filament into several quantum wells. Device conductance changes exponentially when one oxygenmore » atom moves away from interface into filament. We propose that the high sensitivity of device conductance to the position of oxygen atoms results in the large variation of device off-state resistance. Another issue that we have recently addressed is the poor switching performance of devices based on a TiN-HfO 2-TiN structure. While recent experiments have shown that by inserting an "oxygen scavenger" metal between positive electrode and oxide significantly improves device performance, the fundamental understanding of the improvement is lacking.We provide detailed understanding how scavenger layers improve device performance. First, we show that Ta insertion facilitates formation of on-states by reducing the formation energy. Second, the inserted Ta layer reduces the Schottky barrier height in the off-states by changing interface electric dipole at the oxide electrode interface. Nevertheless, the device maintains a high on/off resistance ratio. Finally, with Ta insertion the on-state conductance becomes much less sensitive to the specific location from which the oxygen was removed from the oxide. In conclusion, our studies provide fundamental understanding needed for enabling realization of a non-volatile memory technology with reduced energy consumption.« less

Ab initio modeling of transport and thermodynamic stability for hafnia memristive devices

DOE PAGES

Zhong, Xiaoliang; Rungger, Ivan; Zapol, Peter; ...

2017-09-05

HfO 2-based memristive switching devices are currently under intensive investigation due to their high performance and mature fabrication techniques. However, several critical issues have to be addressed to bring them from lab to market. We have recently looked into two important issues with the use of density functional theory methods. One is the wide distribution of device resistance in off-states. We have modeled the switching process of a Pt-HfO 2-Pt structure for which quantized conductance was observed. Oxygen atoms moving inside a conductive oxygen vacancy filament divide the filament into several quantum wells. Device conductance changes exponentially when one oxygenmore » atom moves away from interface into filament. We propose that the high sensitivity of device conductance to the position of oxygen atoms results in the large variation of device off-state resistance. Another issue that we have recently addressed is the poor switching performance of devices based on a TiN-HfO 2-TiN structure. While recent experiments have shown that by inserting an "oxygen scavenger" metal between positive electrode and oxide significantly improves device performance, the fundamental understanding of the improvement is lacking.We provide detailed understanding how scavenger layers improve device performance. First, we show that Ta insertion facilitates formation of on-states by reducing the formation energy. Second, the inserted Ta layer reduces the Schottky barrier height in the off-states by changing interface electric dipole at the oxide electrode interface. Nevertheless, the device maintains a high on/off resistance ratio. Finally, with Ta insertion the on-state conductance becomes much less sensitive to the specific location from which the oxygen was removed from the oxide. In conclusion, our studies provide fundamental understanding needed for enabling realization of a non-volatile memory technology with reduced energy consumption.« less

Emerging technologies in Si active photonics

NASA Astrophysics Data System (ADS)

Wang, Xiaoxin; Liu, Jifeng

2018-06-01

Silicon photonics for synergistic electronic–photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key challenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss recent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-performance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator materials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-absorption modulators and plasmonic-organic electro-optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p–i–n photodiodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electronicSilicon photonics for synergistic electronic-photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key challenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss recent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-performance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator materials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-absorption modulators and plasmonic-organic electro–optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p–i–n photodiodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electronic–photonic integration with performance inaccessible from conventional Si photonics technologies-photonic integration with performance inaccessible from conventional Si photonics technologies.

Coated Porous Si for High Performance On-Chip Supercapacitors

NASA Astrophysics Data System (ADS)

Grigoras, K.; Keskinen, J.; Grönberg, L.; Ahopelto, J.; Prunnila, M.

2014-11-01

High performance porous Si based supercapacitor electrodes are demonstrated. High power density and stability is provided by ultra-thin TiN coating of the porous Si matrix. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm3. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing several thousands of charge/discharge cycles.

All-Solution-Processed Metal-Oxide-Free Flexible Organic Solar Cells with Over 10% Efficiency.

PubMed

Song, Wei; Fan, Xi; Xu, Bingang; Yan, Feng; Cui, Huiqin; Wei, Qiang; Peng, Ruixiang; Hong, Ling; Huang, Jiaming; Ge, Ziyi

2018-05-16

All-solution-processing at low temperatures is important and desirable for making printed photovoltaic devices and also offers the possibility of a safe and cost-effective fabrication environment for the devices. Herein, an all-solution-processed flexible organic solar cell (OSC) using poly(3,4-ethylenedioxythiophene):poly-(styrenesulfonate) electrodes is reported. The all-solution-processed flexible devices yield the highest power conversion efficiency of 10.12% with high fill factor of over 70%, which is the highest value for metal-oxide-free flexible OSCs reported so far. The enhanced performance is attributed to the newly developed gentle acid treatment at room temperature that enables a high-performance PEDOT:PSS/plastic underlying substrate with a matched work function (≈4.91 eV), and the interface engineering that endows the devices with better interface contacts and improved hole mobility. Furthermore, the flexible devices exhibit an excellent mechanical flexibility, as indicated by a high retention (≈94%) of the initial efficiency after 1000 bending cycles. This work provides a simple route to fabricate high-performance all-solution-processed flexible OSCs, which is important for the development of printing, blading, and roll-to-roll technologies. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhanced performance of ferroelectric-based all organic transistors and capacitors through choice of solvent

NASA Astrophysics Data System (ADS)

Knotts, Grant; Bhaumik, Anagh; Ghosh, Kartik; Guha, Suchismita

2014-03-01

We examine the role of solvents in the performance of pentacene devices using the ferroelectric copolymer poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFe) as a gate insulating layer. High dipole moment solvents such as dimethyl sulfoxide used to dissolve the copolymer for spin casting increase the charge carrier mobility in field-effect transistors by nearly an order of magnitude as compared to lower dipole moment solvents. The polarization in Al/PVDF-TrFe/Au metal-ferroelectric-metal devices is also investigated. An increase in remnant polarization of ~ 20% is observed in the sample using dimethyl sulfoxide as the ferroelectric solvent. Interestingly, at low applied electric fields of ~ 100 MV/m a remnant polarization is seen in the high dipole moment device that is nearly 3.5 times larger than the value observed in the lower dipole moment samples, suggesting that the degree of dipolar order is higher at low operating voltages for the high dipole moment device. Detailed analysis of the capacitance characteristics of metal-insulator-semiconductor structure is performed. The density of interface trap states is nearly an order of magnitude lower for the high dipole moment device. This work was supported by National Science Foundation under Grant No. ECCS-1305642.

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz.

PubMed

Moustakas, Theodore D; Paiella, Roberto

2017-10-01

This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, 'visible blind' and 'solar blind' detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

NASA Astrophysics Data System (ADS)

Moustakas, Theodore D.; Paiella, Roberto

2017-10-01

This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, ‘visible blind’ and ‘solar blind’ detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure

NASA Astrophysics Data System (ADS)

Tsai, Tsung-Ling; Chang, Hsiang-Yu; Lou, Jesse Jen-Chung; Tseng, Tseung-Yuen

2016-04-01

In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO2)/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO2/ITO single layer device, the ITO/ZrO2/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by forming an asymmetrical conductive filament with the weakest part at the ZrO2/AlON interface. Therefore, in the ITO/ZrO2/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.

Multiscale Thermo-Mechanical Design and Analysis of High Frequency and High Power Vacuum Electron Devices

NASA Astrophysics Data System (ADS)

Gamzina, Diana

Diana Gamzina March 2016 Mechanical and Aerospace Engineering Multiscale Thermo-Mechanical Design and Analysis of High Frequency and High Power Vacuum Electron Devices Abstract A methodology for performing thermo-mechanical design and analysis of high frequency and high average power vacuum electron devices is presented. This methodology results in a "first-pass" engineering design directly ready for manufacturing. The methodology includes establishment of thermal and mechanical boundary conditions, evaluation of convective film heat transfer coefficients, identification of material options, evaluation of temperature and stress field distributions, assessment of microscale effects on the stress state of the material, and fatigue analysis. The feature size of vacuum electron devices operating in the high frequency regime of 100 GHz to 1 THz is comparable to the microstructure of the materials employed for their fabrication. As a result, the thermo-mechanical performance of a device is affected by the local material microstructure. Such multiscale effects on the stress state are considered in the range of scales from about 10 microns up to a few millimeters. The design and analysis methodology is demonstrated on three separate microwave devices: a 95 GHz 10 kW cw sheet beam klystron, a 263 GHz 50 W long pulse wide-bandwidth sheet beam travelling wave tube, and a 346 GHz 1 W cw backward wave oscillator.

A molecular nematic liquid crystalline material for high-performance organic photovoltaics

PubMed Central

Sun, Kuan; Xiao, Zeyun; Lu, Shirong; Zajaczkowski, Wojciech; Pisula, Wojciech; Hanssen, Eric; White, Jonathan M.; Williamson, Rachel M.; Subbiah, Jegadesan; Ouyang, Jianyong; Holmes, Andrew B.; Wong, Wallace W.H.; Jones, David J.

2015-01-01

Solution-processed organic photovoltaic cells (OPVs) hold great promise to enable roll-to-roll printing of environmentally friendly, mechanically flexible and cost-effective photovoltaic devices. Nevertheless, many high-performing systems show best power conversion efficiencies (PCEs) with a thin active layer (thickness is ~100 nm) that is difficult to translate to roll-to-roll processing with high reproducibility. Here we report a new molecular donor, benzodithiophene terthiophene rhodanine (BTR), which exhibits good processability, nematic liquid crystalline behaviour and excellent optoelectronic properties. A maximum PCE of 9.3% is achieved under AM 1.5G solar irradiation, with fill factor reaching 77%, rarely achieved in solution-processed OPVs. Particularly promising is the fact that BTR-based devices with active layer thicknesses up to 400 nm can still afford high fill factor of ~70% and high PCE of ~8%. Together, the results suggest, with better device architectures for longer device lifetime, BTR is an ideal candidate for mass production of OPVs. PMID:25586307

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

PubMed

Luo, Qing; Xu, Xiaoxin; Liu, Hongtao; Lv, Hangbing; Gong, Tiancheng; Long, Shibing; Liu, Qi; Sun, Haitao; Banerjee, Writam; Li, Ling; Gao, Jianfeng; Lu, Nianduan; Liu, Ming

2016-08-25

Vertical crossbar arrays provide a cost-effective approach for high density three-dimensional (3D) integration of resistive random access memory. However, an individual selector device is not allowed to be integrated with the memory cell separately. The development of V-RRAM has impeded the lack of satisfactory self-selective cells. In this study, we have developed a high performance bilayer self-selective device using HfO2 as the memory switching layer and a mixed ionic and electron conductor as the selective layer. The device exhibits high non-linearity (>10(3)) and ultra-low half-select leakage (<0.1 pA). A four layer vertical crossbar array was successfully demonstrated based on the developed self-selective device. High uniformity, ultra-low leakage, sub-nA operation, self-compliance, and excellent read/write disturbance immunity were achieved. The robust array level performance shows attractive potential for low power and high density 3D data storage applications.

Silicon insulator-based dielectrophoresis devices for minimized heating effects.

PubMed

Zellner, Phillip; Agah, Masoud

2012-08-01

Concentration of biological specimens that are extremely dilute in a solution is of paramount importance for their detection. Microfluidic chips based on insulator-based DEP (iDEP) have been used to selectively concentrate bacteria and viruses. iDEP biochips are currently fabricated with glass or polymer substrates to allow for high electric fields within the channels. Joule heating is a well-known problem in these substrates and can lead to decreased throughput and even device failure. In this work, we present, for the first time, highly efficient trapping and separation of particles in DC iDEP devices that are fabricated on silicon using a single-etch-step three-dimensional microfabrication process with greatly improved heat dissipation properties. Fabrication in silicon allows for greater heat dissipation for identical geometries and operating conditions. The 3D fabrication allows for higher performance at lower applied potentials. Thermal measurements were performed on both the presented silicon chips and previously published PDMS devices comprised of microposts. Trapping and separation of 1 and 2 μm polystyrene particles was demonstrated. These results demonstrate the feasibility of high-performance silicon iDEP devices for the next generation of sorting and concentration microsystems. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Light-induced lattice expansion leads to high-efficiency perovskite solar cells.

PubMed

Tsai, Hsinhan; Asadpour, Reza; Blancon, Jean-Christophe; Stoumpos, Constantinos C; Durand, Olivier; Strzalka, Joseph W; Chen, Bo; Verduzco, Rafael; Ajayan, Pulickel M; Tretiak, Sergei; Even, Jacky; Alam, Muhammad Ashraf; Kanatzidis, Mercouri G; Nie, Wanyi; Mohite, Aditya D

2018-04-06

Light-induced structural dynamics plays a vital role in the physical properties, device performance, and stability of hybrid perovskite-based optoelectronic devices. We report that continuous light illumination leads to a uniform lattice expansion in hybrid perovskite thin films, which is critical for obtaining high-efficiency photovoltaic devices. Correlated, in situ structural and device characterizations reveal that light-induced lattice expansion benefits the performances of a mixed-cation pure-halide planar device, boosting the power conversion efficiency from 18.5 to 20.5%. The lattice expansion leads to the relaxation of local lattice strain, which lowers the energetic barriers at the perovskite-contact interfaces, thus improving the open circuit voltage and fill factor. The light-induced lattice expansion did not compromise the stability of these high-efficiency photovoltaic devices under continuous operation at full-spectrum 1-sun (100 milliwatts per square centimeter) illumination for more than 1500 hours. Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

PubMed

Liu, Yuan; Guo, Jian; Wu, Yecun; Zhu, Enbo; Weiss, Nathan O; He, Qiyuan; Wu, Hao; Cheng, Hung-Chieh; Xu, Yang; Shakir, Imran; Huang, Yu; Duan, Xiangfeng

2016-10-12

Two-dimensional semiconductors (2DSCs) such as molybdenum disulfide (MoS 2 ) have attracted intense interest as an alternative electronic material in the postsilicon era. However, the ON-current density achieved in 2DSC transistors to date is considerably lower than that of silicon devices, and it remains an open question whether 2DSC transistors can offer competitive performance. A high current device requires simultaneous minimization of the contact resistance and channel length, which is a nontrivial challenge for atomically thin 2DSCs, since the typical low contact resistance approaches for 2DSCs either degrade the electronic properties of the channel or are incompatible with the fabrication process for short channel devices. Here, we report a new approach toward high-performance MoS 2 transistors by using a physically assembled nanowire as a lift-off mask to create ultrashort channel devices with pristine MoS 2 channel and self-aligned low resistance metal/graphene hybrid contact. With the optimized contact in short channel devices, we demonstrate sub-100 nm MoS 2 transistor delivering a record high ON-current of 0.83 mA/μm at 300 K and 1.48 mA/μm at 20 K, which compares well with that of silicon devices. Our study, for the first time, demonstrates that the 2DSC transistors can offer comparable performance to the 2017 target for silicon transistors in International Technology Roadmap for Semiconductors (ITRS), marking an important milestone in 2DSC electronics.

Progress and Design Concerns of Nanostructured Solar Energy Harvesting Devices.

PubMed

Leung, Siu-Fung; Zhang, Qianpeng; Tavakoli, Mohammad Mahdi; He, Jin; Mo, Xiaoliang; Fan, Zhiyong

2016-05-01

Integrating devices with nanostructures is considered a promising strategy to improve the performance of solar energy harvesting devices such as photovoltaic (PV) devices and photo-electrochemical (PEC) solar water splitting devices. Extensive efforts have been exerted to improve the power conversion efficiencies (PCE) of such devices by utilizing novel nanostructures to revolutionize device structural designs. The thicknesses of light absorber and material consumption can be substantially reduced because of light trapping with nanostructures. Meanwhile, the utilization of nanostructures can also result in more effective carrier collection by shortening the photogenerated carrier collection path length. Nevertheless, performance optimization of nanostructured solar energy harvesting devices requires a rational design of various aspects of the nanostructures, such as their shape, aspect ratio, periodicity, etc. Without this, the utilization of nanostructures can lead to compromised device performance as the incorporation of these structures can result in defects and additional carrier recombination. The design guidelines of solar energy harvesting devices are summarized, including thin film non-uniformity on nanostructures, surface recombination, parasitic absorption, and the importance of uniform distribution of photo-generated carriers. A systematic view of the design concerns will assist better understanding of device physics and benefit the fabrication of high performance devices in the future. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improving the light-emitting properties of single-layered polyfluorene light-emitting devices by simple ionic liquid blending

NASA Astrophysics Data System (ADS)

Horike, Shohei; Nagaki, Hiroto; Misaki, Masahiro; Koshiba, Yasuko; Morimoto, Masahiro; Fukushima, Tatsuya; Ishida, Kenji

2018-03-01

This paper describes an evaluation of ionic liquids (ILs) as potential electrolytes for single-layered light-emitting devices with good emission performance. As optoelectronic devices continue to grow in abundance, high-performance light-emitting devices with a single emission layer are becoming increasingly important for low-cost production. We show that a simple technique of osmosing IL into the polymer layer can result in high luminous efficiency and good response times of single-layered light-emitting polymers, even without the additional stacking of charge carrier injection and transport layers. The IL contributions to the light-emission of the polymer are discussed from the perspectives of energy diagrams and of the electric double layers on the electrodes. Our findings enable a faster, cheaper, and lower-in-waste production of light-emitting devices.

Experimental evaluation of a miniature MR device for a wide range of human perceivable haptic sensations

NASA Astrophysics Data System (ADS)

Yang, Tae-Heon; Koo, Jeong-Hoi

2017-12-01

Humans can experience a realistic and vivid haptic sensations by the sense of touch. In order to have a fully immersive haptic experience, both kinaesthetic and vibrotactile information must be presented to human users. Currently, little haptic research has been performed on small haptic actuators that can covey both vibrotactile feedback based on the frequency of vibrations up to the human-perceivable limit and multiple levels of kinaesthetic feedback rapidly. Therefore, this study intends to design a miniature haptic device based on MR fluid and experimentally evaluate its ability to convey vibrotactile feedback up to 300 Hz along with kinaesthetic feedback. After constructing a prototype device, a series of testing was performed to evaluate its performance of the prototype using an experimental setup, consisting of a precision dynamic mechanical analyzer and an accelerometer. The kinaesthetic testing results show that the prototype device can provide the force rate up to 89% at 5 V (360 mA), which can be discretized into multiple levels of ‘just noticeable difference’ force rate, indicating that the device can convey a wide range of kinaesthetic sensations. To evaluate the high frequency vibrotactile feedback performance of the device, its acceleration responses were measured and processed using the FFT analysis. The results indicate that the device can convey high frequency vibrotactile sensations up to 300 Hz with the sufficiently large intensity of accelerations that human can feel.

Electrical Stress Influences the Efficiency of CH3 NH3 PbI3 Perovskite Light Emitting Devices.

PubMed

Zhao, Lianfeng; Gao, Jia; Lin, YunHui L; Yeh, Yao-Wen; Lee, Kyung Min; Yao, Nan; Loo, Yueh-Lin; Rand, Barry P

2017-06-01

Organic-inorganic hybrid perovskite materials are emerging as semiconductors with potential application in optoelectronic devices. In particular, perovskites are very promising for light-emitting devices (LEDs) due to their high color purity, low nonradiative recombination rates, and tunable bandgap. Here, using pure CH 3 NH 3 PbI 3 perovskite LEDs with an external quantum efficiency (EQE) of 5.9% as a platform, it is shown that electrical stress can influence device performance significantly, increasing the EQE from an initial 5.9% to as high as 7.4%. Consistent with the enhanced device performance, both the steady-state photoluminescence (PL) intensity and the time-resolved PL decay lifetime increase after electrical stress, indicating a reduction in nonradiative recombination in the perovskite film. By investigating the temperature-dependent characteristics of the perovskite LEDs and the cross-sectional elemental depth profile, it is proposed that trap reduction and resulting device-performance enhancement is due to local ionic motion of excess ions, likely excess mobile iodide, in the perovskite film that fills vacancies and reduces interstitial defects. On the other hand, it is found that overstressed LEDs show irreversibly degraded device performance, possibly because ions initially on the perovskite lattice are displaced during extended electrical stress and create defects such as vacancies. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-Performance Flexible All-Solid-State Supercapacitor from Large Free-Standing Graphene-PEDOT/PSS Films.

PubMed

Liu, Yuqing; Weng, Bo; Razal, Joselito M; Xu, Qun; Zhao, Chen; Hou, Yuyang; Seyedin, Shayan; Jalili, Rouhollah; Wallace, Gordon G; Chen, Jun

2015-11-20

Although great attention has been paid to wearable electronic devices in recent years, flexible lightweight batteries or supercapacitors with high performance are still not readily available due to the limitations of the flexible electrode inventory. In this work, highly flexible, bendable and conductive rGO-PEDOT/PSS films were prepared using a simple bar-coating method. The assembled device using rGO-PEDOT/PSS electrode could be bent and rolled up without any decrease in electrochemical performance. A relatively high areal capacitance of 448 mF cm(-2) was achieved at a scan rate of 10 mV s(-1) using the composite electrode with a high mass loading (8.49 mg cm(-2)), indicating the potential to be used in practical applications. To demonstrate this applicability, a roll-up supercapacitor device was constructed, which illustrated the operation of a green LED light for 20 seconds when fully charged.

High-Performance Flexible All-Solid-State Supercapacitor from Large Free-Standing Graphene-PEDOT/PSS Films

NASA Astrophysics Data System (ADS)

Liu, Yuqing; Weng, Bo; Razal, Joselito M.; Xu, Qun; Zhao, Chen; Hou, Yuyang; Seyedin, Shayan; Jalili, Rouhollah; Wallace, Gordon G.; Chen, Jun

2015-11-01

Although great attention has been paid to wearable electronic devices in recent years, flexible lightweight batteries or supercapacitors with high performance are still not readily available due to the limitations of the flexible electrode inventory. In this work, highly flexible, bendable and conductive rGO-PEDOT/PSS films were prepared using a simple bar-coating method. The assembled device using rGO-PEDOT/PSS electrode could be bent and rolled up without any decrease in electrochemical performance. A relatively high areal capacitance of 448 mF cm-2 was achieved at a scan rate of 10 mV s-1 using the composite electrode with a high mass loading (8.49 mg cm-2), indicating the potential to be used in practical applications. To demonstrate this applicability, a roll-up supercapacitor device was constructed, which illustrated the operation of a green LED light for 20 seconds when fully charged.

Wafer scale fabrication of carbon nanotube thin film transistors with high yield

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tian, Boyuan; Liang, Xuelei, E-mail: liangxl@pku.edu.cn, E-mail: ssxie@iphy.ac.cn; Yan, Qiuping

Carbon nanotube thin film transistors (CNT-TFTs) are promising candidates for future high performance and low cost macro-electronics. However, most of the reported CNT-TFTs are fabricated in small quantities on a relatively small size substrate. The yield of large scale fabrication and the performance uniformity of devices on large size substrates should be improved before the CNT-TFTs reach real products. In this paper, 25 200 devices, with various geometries (channel width and channel length), were fabricated on 4-in. size ridged and flexible substrates. Almost 100% device yield were obtained on a rigid substrate with high out-put current (>8 μA/μm), high on/off current ratiomore » (>10{sup 5}), and high mobility (>30 cm{sup 2}/V·s). More importantly, uniform performance in 4-in. area was achieved, and the fabrication process can be scaled up. The results give us more confidence for the real application of the CNT-TFT technology in the near future.« less

Development of high-performing semiconducting polymers for organic electrochemical transistors (Conference Presentation)

NASA Astrophysics Data System (ADS)

Nielsen, Christian

2016-11-01

The organic electrochemical transistor (OECT), capable of amplifying small electrical signals in an aqueous environment, is an ideal device to utilize in organic bioelectronic applications involving for example neural interfacing and diagnostics. Currently, most OECTs are fabricated with commercially available conducting poly(3,4-ethylenedioxythiophene)-based suspensions such as PEDOT:PSS and are therefore operated in depletion mode giving rise to devices that are permanently on with non-optimal operational voltage. With the aim to develop and utilize efficient accumulation mode OECT devices, we discuss here our recent results regarding the design, synthesis and performance of novel intrinsic semiconducting polymers. Covering key aspects such as ion and charge transport in the bulk semiconductor and operational voltage and stability of the materials and devices, we have elucidated important structure-property relationships. We illustrate the improvements this approach has afforded in the development of high performance accumulation mode OECT materials.

Polymer taper bridge for silicon waveguide to single mode waveguide coupling

NASA Astrophysics Data System (ADS)

Kruse, Kevin; Middlebrook, Christopher T.

2016-03-01

Coupling of optical power from high-density silicon waveguides to silica optical fibers for signal routing can incur high losses and often requires complex end-face preparation/processing. Novel coupling device taper structures are proposed for low coupling loss between silicon photonic waveguides and single mode fibers are proposed and devices are fabricated and measured in terms of performance. Theoretical mode conversion models for waveguide tapers are derived for optimal device structure design and performance. Commercially viable vertical and multi-layer taper designs using polymer waveguide materials are proposed as innovative, cost-efficient, and mass-manufacturable optical coupling devices. The coupling efficiency for both designs is determined to evaluate optimal device dimensions and alignment tolerances with both silicon rib waveguides and silicon nanowire waveguides. Propagation loss as a function of waveguide roughness and metallic loss are determined and correlated to waveguide dimensions to obtain total insertion loss for the proposed taper designs. Multi-layer tapers on gold-sputtered substrates are fabricated through photolithography as proof-of-concept devices and evaluated for device loss optimization. Tapered waveguide coupling loss with Si WGs (2.74 dB) was experimentally measured with high correlation to theoretical results.

A TiAlCu Metallization for ` n' Type CoSb_x Skutterudites with Improved Performance for High-Temperature Energy Harvesting Applications

NASA Astrophysics Data System (ADS)

Rao, Ashwin; Bosak, Gregg; Joshi, Binay; Keane, Jennifer; Nally, Luke; Peng, Adam; Perera, Susanthri; Waring, Alfred; Poudel, Bed

2017-04-01

The choice of the appropriate metallizing layer for high-temperature thermoelectric (TE) materials is a tricky task and poses varied challenges to researchers. In this work, a n type TiAl metallizing layer (90% Ti with 10% Al by weight with a copper foil) is proposed for a Yb_{0.2}Co4Sb_{12} skutterudite (SK) TE material coupled with a standard ` p type' SK base of Nd_{0.45}Ce_{0.45}Fe_{3.5}Co_{0.5}Sb_{12} with a 60:12:28% Fe:Ni:Cr metallizing layer. The n type and p type nanostructured SK powders are sintered at high temperatures and pressures in a DC hot press from which a TE device is assembled using diced, polished and property characterized TE legs (high figure of merit zT of 1.4 for n type and 1.2 for p type, respectively). The device is evaluated for functional degradation with repeated cycling to 500°C hot side (HS) and 50°C cold side (CS) temperatures in a specially designed high-vacuum test rig with key TE properties like peak power, open circuit voltage, and material internal resistance continuously recorded over each cycle. The device shows stable performance with <7% drop in TE harvested power over 2500 thermal cycles. With the industry benchmark for evaluating TE device performance being around 1000 thermal cycles (<10% drop in TE power over time), the study indicates stable performance of the n type TiAl metallizing layer over the device lifetime.

High Performance Polymer Memory and Its Formation

DTIC Science & Technology

2007-04-26

the retention time of the device was performed to estimate the barrier height of the charge trap . The activation energy was approximated to be about...characteristics and presented a model to explain the mechanism of electrical switching in the device. By exploiting an electric-field induced charge transfer...electrical current in the high conductivity state would be due to some temperature-independent charge tunneling processes. The IV curves could be

Achievements and perspectives of fiber gyros

NASA Astrophysics Data System (ADS)

Boehm, Manfred

1986-01-01

After evaluating the development history and current status of fiber-optic gyros employing the Sagnac effect, attention is given to a novel class of inertial fiber-optic motion devices having their basis in the Kennedy-Thorndike (1932) interferometry experiments. These devices promise high performance strapdown inertial navigation systems that dispense with accelerometers. The prospective performance of such devices is discussed in light of an analysis of Sagnac, Michelson, and Kennedy-Thorndike interferometers.

Optimisation of oxygen ion transport in materials for ceramic membrane devices.

PubMed

Kilner, J A

2007-01-01

Oxygen transport in ceramic oxide materials has received much attention over the past few decades. Much of this interest has stemmed from the desire to construct high temperature electrochemical devices for energy conversion, an example being the solid oxide fuel cell. In order to achieve high performance for these devices, insights are needed in how to achieve optimum performance from the functional components such as the electrolytes and electrodes. This includes the optimisation of oxygen transport through the crystal lattice of electrode and electrolyte materials and across the homogeneous (grain boundary) and heterogeneous interfaces that exist in real devices. Strategies are discussed for the optimisation of these quantities and current problems in the characterisation of interfacial transport are explored.

Amorphous Silicon Based Neutron Detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Liwei

2004-12-12

Various large-scale neutron sources already build or to be constructed, are important for materials research and life science research. For all these neutron sources, neutron detectors are very important aspect. However, there is a lack of a high-performance and low-cost neutron beam monitor that provides time and temporal resolution. The objective of this SBIR Phase I research, collaboratively performed by Midwest Optoelectronics, LLC (MWOE), the University of Toledo (UT) and Oak Ridge National Laboratory (ORNL), is to demonstrate the feasibility for amorphous silicon based neutron beam monitors that are pixilated, reliable, durable, fully packaged, and fabricated with high yield usingmore » low-cost method. During the Phase I effort, work as been focused in the following areas: 1) Deposition of high quality, low-defect-density, low-stress a-Si films using very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) at high deposition rate and with low device shunting; 2) Fabrication of Si/SiO2/metal/p/i/n/metal/n/i/p/metal/SiO2/ device for the detection of alpha particles which are daughter particles of neutrons through appropriate nuclear reactions; and 3) Testing of various devices fabricated for alpha and neutron detection; As the main results: · High quality, low-defect-density, low-stress a-Si films have been successfully deposited using VHF PECVD on various low-cost substrates; · Various single-junction and double junction detector devices have been fabricated; · The detector devices fabricated have been systematically tested and analyzed. · Some of the fabricated devices are found to successfully detect alpha particles. Further research is required to bring this Phase I work beyond the feasibility demonstration toward the final prototype devices. The success of this project will lead to a high-performance, low-cost, X-Y pixilated neutron beam monitor that could be used in all of the neutron facilities worldwide. In addition, the technologies developed here could be used to develop X-ray and neutron monitors that could be used in the future for security checks at the airports and other critical facilities. The project would lead to devices that could significantly enhance the performance of multi-billion dollar neutron source facilities in the US and bring our nation to the forefront of neutron beam sciences and technologies which have enormous impact to materials, life science and military research and applications.« less

Inverse design engineering of all-silicon polarization beam splitters

NASA Astrophysics Data System (ADS)

Frandsen, Lars H.; Sigmund, Ole

2016-03-01

Utilizing the inverse design engineering method of topology optimization, we have realized high-performing all-silicon ultra-compact polarization beam splitters. We show that the device footprint of the polarization beam splitter can be as compact as ~2 μm2 while performing experimentally with a polarization splitting loss lower than ~0.82 dB and an extinction ratio larger than ~15 dB in the C-band. We investigate the device performance as a function of the device length and find a lower length above which the performance only increases incrementally. Imposing a minimum feature size constraint in the optimization is shown to affect the performance negatively and reveals the necessity for light to scatter on a sub-wavelength scale to obtain functionalities in compact photonic devices.

Apparatus for fixing latency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hall, David R; Bartholomew, David B; Moon, Justin

2009-09-08

An apparatus for fixing computational latency within a deterministic region on a network comprises a network interface modem, a high priority module and at least one deterministic peripheral device. The network interface modem is in communication with the network. The high priority module is in communication with the network interface modem. The at least one deterministic peripheral device is connected to the high priority module. The high priority module comprises a packet assembler/disassembler, and hardware for performing at least one operation. Also disclosed is an apparatus for executing at least one instruction on a downhole device within a deterministic region,more » the apparatus comprising a control device, a downhole network, and a downhole device. The control device is near the surface of a downhole tool string. The downhole network is integrated into the tool string. The downhole device is in communication with the downhole network.« less

Aloe vera Derived Activated High-Surface-Area Carbon for Flexible and High-Energy Supercapacitors.

PubMed

Karnan, M; Subramani, K; Sudhan, N; Ilayaraja, N; Sathish, M

2016-12-28

Materials which possess high specific capacitance in device configuration with low cost are essential for viable application in supercapacitors. Herein, a flexible high-energy supercapacitor device was fabricated using porous activated high-surface-area carbon derived from aloe leaf (Aloe vera) as a precursor. The A. vera derived activated carbon showed mesoporous nature with high specific surface area of ∼1890 m 2 /g. A high specific capacitance of 410 and 306 F/g was achieved in three-electrode and symmetric two-electrode system configurations in aqueous electrolyte, respectively. The fabricated all-solid-state device showed a high specific capacitance of 244 F/g with an energy density of 8.6 Wh/kg. In an ionic liquid electrolyte, the fabricated device showed a high specific capacitance of 126 F/g and a wide potential window up to 3 V, which results in a high energy density of 40 Wh/kg. Furthermore, it was observed that the activation temperature has significant role in the electrochemical performance, as the activated sample at 700 °C showed best activity than the samples activated at 600 and 800 °C. The electron microscopic images (FE-SEM and HR-TEM) confirmed the formation of pores by the chemical activation. A fabricated supercapacitor device in ionic liquid with 3 V could power up a red LED for 30 min upon charging for 20s. Also, it is shown that the operation voltage and capacitance of flexible all-solid-state symmetric supercapacitors fabricated using aloe-derived activated carbon could be easily tuned by series and parallel combinations. The performance of fabricated supercapacitor devices using A. vera derived activated carbon in all-solid-state and ionic liquid indicates their viable applications in flexible devices and energy storage.

Brownmillerite thin films as fast ion conductors for ultimate-performance resistance switching memory.

PubMed

Acharya, Susant Kumar; Jo, Janghyun; Raveendra, Nallagatlla Venkata; Dash, Umasankar; Kim, Miyoung; Baik, Hionsuck; Lee, Sangik; Park, Bae Ho; Lee, Jae Sung; Chae, Seung Chul; Hwang, Cheol Seong; Jung, Chang Uk

2017-07-27

An oxide-based resistance memory is a leading candidate to replace Si-based flash memory as it meets the emerging specifications for future memory devices. The non-uniformity in the key switching parameters and low endurance in conventional resistance memory devices are preventing its practical application. Here, a novel strategy to overcome the aforementioned challenges has been unveiled by tuning the growth direction of epitaxial brownmillerite SrFeO 2.5 thin films along the SrTiO 3 [111] direction so that the oxygen vacancy channels can connect both the top and bottom electrodes rather directly. The controlled oxygen vacancy channels help reduce the randomness of the conducting filament (CF). The resulting device displayed high endurance over 10 6 cycles, and a short switching time of ∼10 ns. In addition, the device showed very high uniformity in the key switching parameters for device-to-device and within a device. This work demonstrates a feasible example for improving the nanoscale device performance by controlling the atomic structure of a functional oxide layer.

Ultrathin two-dimensional MnO2/graphene hybrid nanostructures for high-performance, flexible planar supercapacitors.

PubMed

Peng, Lele; Peng, Xu; Liu, Borui; Wu, Changzheng; Xie, Yi; Yu, Guihua

2013-05-08

Planar supercapacitors have recently attracted much attention owing to their unique and advantageous design for 2D nanomaterials based energy storage devices. However, improving the electrochemical performance of planar supercapacitors still remains a great challenge. Here we report for the first time a novel, high-performance in-plane supercapacitor based on hybrid nanostructures of quasi-2D ultrathin MnO2/graphene nanosheets. Specifically, the planar structures based on the δ-MnO2 nanosheets integrated on graphene sheets not only introduce more electrochemically active surfaces for absorption/desorption of electrolyte ions, but also bring additional interfaces at the hybridized interlayer areas to facilitate charge transport during charging/discharging processes. The unique structural design for planar supercapacitors enables great performance enhancements compared to graphene-only devices, exhibiting high specific capacitances of 267 F/g at current density of 0.2 A/g and 208 F/g at 10 A/g and excellent rate capability and cycling stability with capacitance retention of 92% after 7000 charge/discharge cycles. Moreover, the high planar malleability of planar supercapacitors makes possible superior flexibility and robust cyclability, yielding capacitance retention over 90% after 1000 times of folding/unfolding. Ultrathin 2D nanomaterials represent a promising material platform to realize highly flexible planar energy storage devices as the power back-ups for stretchable/flexible electronic devices.

High power laser workover and completion tools and systems

DOEpatents

Zediker, Mark S; Rinzler, Charles C; Faircloth, Brian O; Koblick, Yeshaya; Moxley, Joel F

2014-10-28

Workover and completion systems, devices and methods for utilizing 10 kW or more laser energy transmitted deep into the earth with the suppression of associated nonlinear phenomena. Systems and devices for the laser workover and completion of a borehole in the earth. These systems and devices can deliver high power laser energy down a deep borehole, while maintaining the high power to perform laser workover and completion operations in such boreholes deep within the earth.

Performance Modeling of Network-Attached Storage Device Based Hierarchical Mass Storage Systems

NASA Technical Reports Server (NTRS)

Menasce, Daniel A.; Pentakalos, Odysseas I.

1995-01-01

Network attached storage devices improve I/O performance by separating control and data paths and eliminating host intervention during the data transfer phase. Devices are attached to both a high speed network for data transfer and to a slower network for control messages. Hierarchical mass storage systems use disks to cache the most recently used files and a combination of robotic and manually mounted tapes to store the bulk of the files in the file system. This paper shows how queuing network models can be used to assess the performance of hierarchical mass storage systems that use network attached storage devices as opposed to host attached storage devices. Simulation was used to validate the model. The analytic model presented here can be used, among other things, to evaluate the protocols involved in 1/0 over network attached devices.

GaN-on-Silicon - Present capabilities and future directions

NASA Astrophysics Data System (ADS)

Boles, Timothy

2018-02-01

Gallium Nitride, in the form of epitaxial HEMT transistors on various substrate materials, is the newest and most promising semiconductor technology for high performance devices in the RF, microwave, and mmW arenas. This is particularly true for GaN-on-Silicon based devices and MMIC's which enable both state-of-the-art high frequency functionality and the ability to scale production into large wafer diameter CMOS foundries. The design and development of GaN-on-Silicon structures and devices will be presented beginning with the basic material parameters, growth of the required epitaxial construction, and leading to the fundamental operational theory of high frequency, high power HEMTs. In this discussion comparisons will be made with alternative substrate materials with emphasis on contrasting the inherent advantages of a silicon based system. Theory of operation of microwave and mmW high power HEMT devices will be presented with special emphasis on fundamental limitations of device performance including inherent frequency limiting transit time analysis, required impedance transformations, internal and external parasitic reactance, thermal impedance optimization, and challenges improved by full integration into monolithic MMICs. Lastly, future directions for implementing GaN-on-Silicon into mainstream CMOS silicon semiconductor technologies will be discussed.

Ultrathin Polyaniline-based Buffer Layer for Highly Efficient Polymer Solar Cells with Wide Applicability

PubMed Central

Zhao, Wenchao; Ye, Long; Zhang, Shaoqing; Fan, Bin; Sun, Mingliang; Hou, Jianhui

2014-01-01

Interfacial buffer layers often attribute the improved device performance in organic optoelectronic device. Herein, a water-soluble hydrochloric acid doped polyanilines (HAPAN) were utilized as p-type electrode buffer layer in highly efficient polymer solar cells (PSC) based on PBDTTT-EFT and several representative polymers. The PBDTTT-EFT-based conventional PSC featuring ultrathin HAPAN (1.3 nm) delivered high PCE approximately 9%, which is one of the highest values among conventional PSC devices. Moreover, ultrathin HAPAN also exhibited wide applicability in a variety of efficient photovoltaic polymers including PBDTTT-C-T, PTB7, PBDTBDD, PBTTDPP-T, PDPP3T and P3HT. The excellent performances were originated from the high transparency, small film roughness and suitable work function. PMID:25300365

Optoelectronic semiconductor device and method of fabrication

DOEpatents

Cui, Yi; Zhu, Jia; Hsu, Ching-Mei; Fan, Shanhui; Yu, Zongfu

2014-11-25

An optoelectronic device comprising an optically active layer that includes a plurality of domes is presented. The plurality of domes is arrayed in two dimensions having a periodicity in each dimension that is less than or comparable with the shortest wavelength in a spectral range of interest. By virtue of the plurality of domes, the optoelectronic device achieves high performance. A solar cell having high energy-conversion efficiency, improved absorption over the spectral range of interest, and an improved acceptance angle is presented as an exemplary device.

Design of double gate vertical tunnel field effect transistor using HDB and its performance estimation

NASA Astrophysics Data System (ADS)

Seema; Chauhan, Sudakar Singh

2018-05-01

In this paper, we demonstrate the double gate vertical tunnel field-effect transistor using homo/hetero dielectric buried oxide (HDB) to obtain the optimized device characteristics. In this concern, the existence of double gate, HDB and electrode work-function engineering enhances DC performance and Analog/RF performance. The use of electrostatic doping helps to achieve higher on-current owing to occurrence of higher tunneling generation rate of charge carriers at the source/epitaxial interface. Further, lightly doped drain region and high- k dielectric below channel and drain region are responsible to suppress the ambipolar current. Simulated results clarifies that proposed device have achieved the tremendous performance in terms of driving current capability, steeper subthreshold slope (SS), drain induced barrier lowering (DIBL), hot carrier effects (HCEs) and high frequency parameters for better device reliability.

Optical-to-optical interface device. [consisting of two transparent electrodes on glass substrates that enclose thin film photoconductor and thin layer of nematic liquid crystal

NASA Technical Reports Server (NTRS)

Jacobson, A. D.

1973-01-01

Studies were conducted on the performance of a photoactivated dc liquid crystal light valve. The dc light valve is a thin film device that consists of two transparent electrodes, deposited on glass substrates, that enclose a thin film photoconductor (cadmium sulfide) and a thin layer of a nematic liquid crystal that operates in the dynamic scattering mode. The work was directed toward application of the light valve to high resolution non-coherent light to coherent light image conversion. The goal of these studies was to improve the performance and quality of the already existing dc light valve device and to evaluate quantitatively the properties and performance of the device as they relate to the coherent optical data processing application. As a result of these efforts, device sensitivity was improved by a factor of ten, device resolution was improved by a factor of three, device lifetime was improved by two-orders of magnitude, undesirable secondary liquid crystal scattering effects were eliminated, the scattering characteristics of the liquid crystal were thoroughly documented, the cosmetic quality of the devices was dramatically improved, and the performance of the device was fully documented.

Experimental evaluation of cooling efficiency of the high performance cooling device

NASA Astrophysics Data System (ADS)

Nemec, Patrik; Malcho, Milan

2016-06-01

This work deal with experimental evaluation of cooling efficiency of cooling device capable transfer high heat fluxes from electric elements to the surrounding. The work contain description of cooling device, working principle of cooling device, construction of cooling device. Experimental part describe the measuring method of device cooling efficiency evaluation. The work results are presented in graphic visualization of temperature dependence of the contact area surface between cooling device evaporator and electronic components on the loaded heat of electronic components in range from 250 to 740 W and temperature dependence of the loop thermosiphon condenser surface on the loaded heat of electronic components in range from 250 to 740 W.

Maximizing the performance of photothermal actuators by combining smart materials with supplementary advantages

PubMed Central

Wang, Tongyu; Torres, David; Fernández, Félix E.; Wang, Chuan; Sepúlveda, Nelson

2017-01-01

The search for higher-performance photothermal microactuators has typically involved unavoidable trade-offs that hinder the demonstration of ubiquitous devices with high energy density, speed, flexibility, efficiency, sensitivity, and multifunctionality. Improving some of these parameters often implies deterioration of others. Photothermal actuators are driven by the conversion of absorbed optical energy into thermal energy, which, by different mechanisms, can produce mechanical displacement of a structure. We present a device that has been strategically designed to show high performance in every metric and respond to optical radiation of selected wavelength bands. The device combines the large energy densities and sensitivity of vanadium dioxide (VO2)–based actuators with the wavelength-selective absorption properties of single-walled carbon nanotube (SWNT) films of different chiralities. SWNT coatings increased the speed of VO2 actuators by a factor of 2 while decreasing the power consumption by approximately 50%. Devices coated with metallic SWNT were found to be 1.57 times more responsive to red light than to near-infrared, whereas semiconducting SWNT coatings resulted in 1.42 times higher responsivities to near-infrared light than to red light. The added functionality establishes a link between optical and mechanical domains of high-performance photoactuators and enables the future development of mechanical logic gates and electronic devices that are triggered by optical radiation from different frequency bands. PMID:28439553

Effects of self-assembled monolayer structural order, surface homogeneity and surface energy on pentacene morphology and thin film transistor device performance.

PubMed

Hutchins, Daniel Orrin; Weidner, Tobias; Baio, Joe; Polishak, Brent; Acton, Orb; Cernetic, Nathan; Ma, Hong; Jen, Alex K-Y

2013-01-04

A systematic study of six phosphonic acid (PA) self-assembled monolayers (SAMs) with tailored molecular structures is performed to evaluate their effectiveness as dielectric modifying layers in organic field-effect transistors (OFETs) and determine the relationship between SAM structural order, surface homogeneity, and surface energy in dictating device performance. SAM structures and surface properties are examined by near edge X-ray absorption fine structure (NEXAFS) spectroscopy, contact angle goniometry, and atomic force microscopy (AFM). Top-contact pentacene OFET devices are fabricated on SAM modified Si with a thermally grown oxide layer as a dielectric. For less ordered methyl- and phenyl-terminated alkyl ~(CH 2 ) 12 PA SAMs of varying surface energies, pentacene OFETs show high charge carrier mobilities up to 4.1 cm 2 V -1 s -1 . It is hypothesized that for these SAMs, mitigation of molecular scale roughness and subsequent control of surface homogeneity allow for large pentacene grain growth leading to high performance pentacene OFET devices. PA SAMs that contain bulky terminal groups or are highly crystalline in nature do not allow for a homogenous surface at a molecular level and result in charge carrier mobilities of 1.3 cm 2 V -1 s -1 or less. For all molecules used in this study, no causal relationship between SAM surface energy and charge carrier mobility in pentacene FET devices is observed.

Effects of self-assembled monolayer structural order, surface homogeneity and surface energy on pentacene morphology and thin film transistor device performance

PubMed Central

Hutchins, Daniel Orrin; Weidner, Tobias; Baio, Joe; Polishak, Brent; Acton, Orb; Cernetic, Nathan; Ma, Hong; Jen, Alex K.-Y.

2013-01-01

A systematic study of six phosphonic acid (PA) self-assembled monolayers (SAMs) with tailored molecular structures is performed to evaluate their effectiveness as dielectric modifying layers in organic field-effect transistors (OFETs) and determine the relationship between SAM structural order, surface homogeneity, and surface energy in dictating device performance. SAM structures and surface properties are examined by near edge X-ray absorption fine structure (NEXAFS) spectroscopy, contact angle goniometry, and atomic force microscopy (AFM). Top-contact pentacene OFET devices are fabricated on SAM modified Si with a thermally grown oxide layer as a dielectric. For less ordered methyl- and phenyl-terminated alkyl ~(CH2)12 PA SAMs of varying surface energies, pentacene OFETs show high charge carrier mobilities up to 4.1 cm2 V−1 s−1. It is hypothesized that for these SAMs, mitigation of molecular scale roughness and subsequent control of surface homogeneity allow for large pentacene grain growth leading to high performance pentacene OFET devices. PA SAMs that contain bulky terminal groups or are highly crystalline in nature do not allow for a homogenous surface at a molecular level and result in charge carrier mobilities of 1.3 cm2 V−1 s−1 or less. For all molecules used in this study, no causal relationship between SAM surface energy and charge carrier mobility in pentacene FET devices is observed. PMID:24086795

Inverted organic photovoltaic device with a new electron transport layer

NASA Astrophysics Data System (ADS)

Kim, Hyeong Pil; Yusoff, Abd Rashid bin Mohd; Kim, Hyo Min; Lee, Hee Jae; Seo, Gi Jun; Jang, Jin

2014-03-01

We demonstrate that there is a new solution-processed electron transport layer, lithium-doped zinc oxide (LZO), with high-performance inverted organic photovoltaic device. The device exhibits a fill factor of 68.58%, an open circuit voltage of 0.86 V, a short-circuit current density of -9.35 cm/mA2 along with 5.49% power conversion efficiency. In addition, we studied the performance of blend ratio dependence on inverted organic photovoltaics. Our device also demonstrates a long stability shelf life over 4 weeks in air.

Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement

NASA Astrophysics Data System (ADS)

Raad, Bhagwan Ram; Nigam, Kaushal; Sharma, Dheeraj; Kondekar, P. N.

2016-06-01

This script features a study of bandgap, gate material work function and gate dielectric engineering for enhancement of DC and Analog/RF performance, reduction in the hot carriers effect (HCEs) and drain induced barrier lowering (DIBL) for better device reliability. In this concern, the use of band gap and gate material work function engineering improves the device performance in terms of the ON-state current and suppressed ambipolar behaviour with maintaining the low OFF-state current. With these advantages, the use of gate material work function engineering imposes restriction on the high frequency performance due to increment in the parasitic capacitances and also introduces the hot carrier effects. Hence, the gate dielectric engineering with bandgap and gate material work function engineering are used in this paper to overcome the cons of the gate material work function engineering by obtaining a superior performance in terms of the current driving capability, ambipolar conduction, HCEs, DIBL and high frequency parameters of the device for ultra-low power applications. Finally, the optimization of length for different work function is performed to get the best out of this.

High-performance IR detector modules

NASA Astrophysics Data System (ADS)

Wendler, Joachim; Cabanski, Wolfgang; Rühlich, Ingo; Ziegler, Johann

2004-02-01

The 3rd generation of infrared (IR) detection modules is expected to provide higher video resolution, advanced functions like multi band or multi color capability, higher frame rates, and better thermal resolution. AIM has developed staring and linear high performance focal plane arrays (FPA) integrated into detector/dewar cooler assemblies (IDCA). Linear FPA"s support high resolution formats such as 1920 x 1152 (HDTV), 1280 x 960, or 1536 x 1152. Standard format for staring FPA"s is 640 x 512. In this configuration, QEIP devices sensitive in the 8 10 µm band as well as MCT devices sensitive in the 3.4 5.0 µm band are available. A 256 x 256 high speed detection module allows a full frame rate >800 Hz. Especially usability of long wavelength devices in high performance FLIR systems does not only depend on the classical electrooptical performance parameters such as NEDT, detectivity, and response homogeneity, but are mainly characterized by the stability of the correction coefficients used for image correction. The FPA"s are available in suited integrated detector/dewar cooler assemblies. The linear cooling engines are designed for maximum stability of the focal plane temperature, low operating temperatures down to 60K, high MTTF lifetimes of 6000h and above even under high ambient temperature conditions. The IDCA"s are equipped with AIM standard or custom specific command and control electronics (CCE) providing a well defined interface to the system electronics. Video output signals are provided as 14 bit digital data rates up to 80 MHz for the high speed devices.

Sol-gel-processed yttrium-doped NiO as hole transport layer in inverted perovskite solar cells for enhanced performance

NASA Astrophysics Data System (ADS)

Hu, Zijun; Chen, Da; Yang, Pan; Yang, Lijun; Qin, Laishun; Huang, Yuexiang; Zhao, Xiaochong

2018-05-01

In this work, high-performance inverted planar perovskite solar cells (PSCs) using sol-gel processed Y-doped NiO thin films as hole transport layer (HTL) were demonstrated. Y-doped NiO thin films containing different Y doping concentrations were successfully prepared through a simple sol-gel process. The Y doping could significantly improve the electrical conductivity of NiO thin film, and the photovoltaic performance of Y-doped NiO HTL-based PSC devices outperformed that of the pristine NiO HTL-based device. Notably, the PSC using a 5%Y-NiO HTL exhibited the champion performance with an open-circuit voltage (Voc) of 1.00 V, a short circuit current density (Jsc) of 23.82 mA cm-2, a fill factor (FF) of 68% and a power conversion efficiency (PCE) of 16.31%, resulting in a 27.62% enhancement in PCE in comparison with the NiO device. The enhanced performance of the Y-doped NiO device could be attributed to the improved hole mobility, the high quality compact active layer morphology, the more efficient charge extraction from perovskite absorber as well as the lower recombination probability of charge carriers. Thus, this work provides a simple and effective approach to improve the electrical conductivity of p-type NiO thin films for use as a promising HTL in high performance PSCs.

Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits

NASA Astrophysics Data System (ADS)

Gundlach, D. J.; Royer, J. E.; Park, S. K.; Subramanian, S.; Jurchescu, O. D.; Hamadani, B. H.; Moad, A. J.; Kline, R. J.; Teague, L. C.; Kirillov, O.; Richter, C. A.; Kushmerick, J. G.; Richter, L. J.; Parkin, S. R.; Jackson, T. N.; Anthony, J. E.

2008-03-01

The use of organic materials presents a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. Commercialization of this technology requires reduction in manufacturing costs by exploiting inexpensive low-temperature deposition and patterning techniques, which typically lead to lower device performance. We report a low-cost approach to control the microstructure of solution-cast acene-based organic thin films through modification of interfacial chemistry. Chemically and selectively tailoring the source/drain contact interface is a novel route to initiating the crystallization of soluble organic semiconductors, leading to the growth on opposing contacts of crystalline films that extend into the transistor channel. This selective crystallization enables us to fabricate high-performance organic thin-film transistors and circuits, and to deterministically study the influence of the microstructure on the device characteristics. By connecting device fabrication to molecular design, we demonstrate that rapid film processing under ambient room conditions and high performance are not mutually exclusive.

Amorphous/crystalline silicon interface passivation: Ambient-temperature dependence and implications for solar cell performance

DOE PAGES

Seif, Johannes P.; Krishnamani, Gopal; Demaurex, Benedicte; ...

2015-03-02

Silicon heterojunction (SHJ) solar cells feature amorphous silicon passivation films, which enable very high voltages. We report how such passivation increases with operating temperature for amorphous silicon stacks involving doped layers and decreases for intrinsic-layer-only passivation. We discuss the implications of this phenomenon on the solar cell's temperature coefficient, which represents an important figure-of-merit for the energy yield of devices deployed in the field. We show evidence that both open-circuit voltage (Voc) and fill factor (FF) are affected by these variations in passivation and quantify these temperature-mediated effects, compared with those expected from standard diode equations. We confirm that devicesmore » with high Voc values at 25°C show better high-temperature performance. Thus, we also argue that the precise device architecture, such as the presence of charge-transport barriers, may affect the temperature-dependent device performance as well.« less

A review of digital microfluidics as portable platforms for lab-on a-chip applications.

PubMed

Samiei, Ehsan; Tabrizian, Maryam; Hoorfar, Mina

2016-07-07

Following the development of microfluidic systems, there has been a high tendency towards developing lab-on-a-chip devices for biochemical applications. A great deal of effort has been devoted to improve and advance these devices with the goal of performing complete sets of biochemical assays on the device and possibly developing portable platforms for point of care applications. Among the different microfluidic systems used for such a purpose, digital microfluidics (DMF) shows high flexibility and capability of performing multiplex and parallel biochemical operations, and hence, has been considered as a suitable candidate for lab-on-a-chip applications. In this review, we discuss the most recent advances in the DMF platforms, and evaluate the feasibility of developing multifunctional packages for performing complete sets of processes of biochemical assays, particularly for point-of-care applications. The progress in the development of DMF systems is reviewed from eight different aspects, including device fabrication, basic fluidic operations, automation, manipulation of biological samples, advanced operations, detection, biological applications, and finally, packaging and portability of the DMF devices. Success in developing the lab-on-a-chip DMF devices will be concluded based on the advances achieved in each of these aspects.

Recent progress in high-mobility thin-film transistors based on multilayer 2D materials

NASA Astrophysics Data System (ADS)

Hong, Young Ki; Liu, Na; Yin, Demin; Hong, Seongin; Kim, Dong Hak; Kim, Sunkook; Choi, Woong; Yoon, Youngki

2017-04-01

Two-dimensional (2D) layered semiconductors are emerging as promising candidates for next-generation thin-film electronics because of their high mobility, relatively large bandgap, low-power switching, and the availability of large-area growth methods. Thin-film transistors (TFTs) based on multilayer transition metal dichalcogenides or black phosphorus offer unique opportunities for next-generation electronic and optoelectronic devices. Here, we review recent progress in high-mobility transistors based on multilayer 2D semiconductors. We describe the theoretical background on characterizing methods of TFT performance and material properties, followed by their applications in flexible, transparent, and optoelectronic devices. Finally, we highlight some of the methods used in metal-semiconductor contacts, hybrid structures, heterostructures, and chemical doping to improve device performance.

760 nm high-performance VCSEL growth and characterization

NASA Astrophysics Data System (ADS)

Rinaldi, Fernando; Ostermann, Johannes M.; Kroner, Andrea; Riedl, Michael C.; Michalzik, Rainer

2006-04-01

High-performance vertical-cavity surface-emitting lasers (VCSELs) with an emission wavelength of approximately 764 nm are demonstrated. This wavelength is very attractive for oxygen sensing. Low threshold currents, high optical output power, single-mode operation, and stable polarization are obtained. Using the surface relief technique and in particular the grating relief technique, we have increased the single-mode output power to more than 2.5mW averaged over a large device quantity. The laser structure was grown by molecular beam epitaxy (MBE) on GaAs (100)-oriented substrates. The devices are entirely based on the AlGaAs mixed compound semiconductor material system. The growth process, the investigations of the epitaxial material together with the device fabrication and characterization are discussed in detail.

Influence of the ambient temperature on the cooling efficiency of the high performance cooling device with thermosiphon effect

NASA Astrophysics Data System (ADS)

Nemec, Patrik; Malcho, Milan

2018-06-01

This work deal with experimental measurement and calculation cooling efficiency of the cooling device working with a heat pipe technology. The referred device in the article is cooling device capable transfer high heat fluxes from electric elements to the surrounding. The work contain description, working principle and construction of cooling device. The main factor affected the dissipation of high heat flux from electronic elements through the cooling device to the surrounding is condenser construction, its capacity and option of heat removal. Experimental part describe the measuring method cooling efficiency of the cooling device depending on ambient temperature in range -20 to 40°C and at heat load of electronic components 750 W. Measured results are compared with results calculation based on physical phenomena of boiling, condensation and natural convection heat transfer.

A Portable, High Resolution, Surface Measurement Device

NASA Technical Reports Server (NTRS)

Ihlefeld, Curtis M.; Burns, Bradley M.; Youngquist, Robert C.

2012-01-01

A high resolution, portable, surface measurement device has been demonstrated to provide micron-resolution topographical plots. This device was specifically developed to allow in-situ measurements of defects on the Space Shuttle Orbiter windows, but is versatile enough to be used on a wide variety of surfaces. This paper discusses the choice of an optical sensor and then the decisions required to convert a lab bench optical measurement device into an ergonomic portable system. The necessary trade-offs between performance and portability are presented along with a description of the device developed to measure Orbiter window defects.

Stepwise heating in Stille polycondensation toward no batch-to-batch variations in polymer solar cell performance.

PubMed

Lee, Sang Myeon; Park, Kwang Hyun; Jung, Seungon; Park, Hyesung; Yang, Changduk

2018-05-14

For a given π-conjugated polymer, the batch-to-batch variations in molecular weight (M w ) and polydispersity index (Ð) can lead to inconsistent process-dependent material properties and consequent performance variations in the device application. Using a stepwise-heating protocol in the Stille polycondensation in conjunction with optimized processing, we obtained an ultrahigh-quality PTB7 polymer having high M w and very narrow Ð. The resulting ultrahigh-quality polymer-based solar cells demonstrate up to 9.97% power conversion efficiencies (PCEs), which is over 24% enhancement from the control devices fabricated with commercially available PTB7. Moreover, we observe almost negligible batch-to-batch variations in the overall PCE values from ultrahigh-quality polymer-based devices. The proposed stepwise polymerization demonstrates a facile and effective strategy for synthesizing high-quality semiconducting polymers that can significantly improve device yield in polymer-based solar cells, an important factor for the commercialization of organic solar cells, by mitigating device-to-device variations.

Monolayer-Mediated Growth of Organic Semiconductor Films with Improved Device Performance.

PubMed

Huang, Lizhen; Hu, Xiaorong; Chi, Lifeng

2015-09-15

Increased interest in wearable and smart electronics is driving numerous research works on organic electronics. The control of film growth and patterning is of great importance when targeting high-performance organic semiconductor devices. In this Feature Article, we summarize our recent work focusing on the growth, crystallization, and device operation of organic semiconductors intermediated by ultrathin organic films (in most cases, only a monolayer). The site-selective growth, modified crystallization and morphology, and improved device performance of organic semiconductor films are demonstrated with the help of the inducing layers, including patterned and uniform Langmuir-Blodgett monolayers, crystalline ultrathin organic films, and self-assembled polymer brush films. The introduction of the inducing layers could dramatically change the diffusion of the organic semiconductors on the surface and the interactions between the active layer with the inducing layer, leading to improved aggregation/crystallization behavior and device performance.

Polymer nanofiber-carbon nanotube network generating circuits

NASA Astrophysics Data System (ADS)

Mutlu, Mustafa Umut; Akın, Osman; Yildiz, Ümit Hakan

2018-02-01

The polymer nanofiber carbon nanotube (CNT) based devices attracts attention since they promise high performance for next generation devices such as wearable electronics, ultra-light weighted appliances and foldable devices. This abstract describes the utilization of polymer nanofibers and CNT as major component of low cost foldable photo-resistor. We use polymer nanofiber as template guiding CNTs to generate nanocircuits and conductive sensing network. The controlled combination of CNTs and polymer nanofibers provide opportunities for device miniaturization without loss of performance. The nanofiber-CNT network based photo-resistor exhibits broad band response 400 to 1600 nm that holding promises for ultra-thin devices and new sensing platforms.

Optimization of flexible substrate by gradient elastic modulus design for performance improvement of flexible electronic devices

NASA Astrophysics Data System (ADS)

Xia, Minggang; Liang, Chunping; Hu, Ruixue; Cheng, Zhaofang; Liu, Shiru; Zhang, Shengli

2018-05-01

It is imperative and highly desirable to buffer the stress in flexible electronic devices. In this study, we designed and fabricated lamellate poly(dimethylsiloxane) (PDMS) samples with gradient elastic moduli, motivated by the protection of the pomelo pulp by its skin, followed by the measurements of their elastic moduli. We demonstrated that the electrical and fatigue performances of a Ag-nanowire thin film device on the PDMS substrate with a gradient elastic modulus are significantly better than those of a device on a substrate with a monolayer PDMS. This study provides a robust scheme to effectively protect flexible electronic devices.

High performance network and channel-based storage

NASA Technical Reports Server (NTRS)

Katz, Randy H.

1991-01-01

In the traditional mainframe-centered view of a computer system, storage devices are coupled to the system through complex hardware subsystems called input/output (I/O) channels. With the dramatic shift towards workstation-based computing, and its associated client/server model of computation, storage facilities are now found attached to file servers and distributed throughout the network. We discuss the underlying technology trends that are leading to high performance network-based storage, namely advances in networks, storage devices, and I/O controller and server architectures. We review several commercial systems and research prototypes that are leading to a new approach to high performance computing based on network-attached storage.

Achieving high performance polymer optoelectronic devices for high efficiency, long lifetime and low fabrication cost

NASA Astrophysics Data System (ADS)

Huang, Jinsong

This thesis described three types of organic optoelectronic devices: polymer light emitting diodes (PLED), polymer photovoltaic solar cell, and organic photo detector. The research in this work focuses improving their performance including device efficiency, operation lifetime simplifying fabrication process. With further understanding in PLED device physics, we come up new device operation model and improved device architecture design. This new method is closely related to understanding of the science and physics at organic/metal oxide and metal oxide/metal interface. In our new device design, both material and interface are considered in order to confine and balance all injected carriers, which has been demonstrated very be successful in increasing device efficiency. We created two world records in device efficiency: 18 lm/W for white emission fluorescence PLED, 22 lm/W for red emission phosphorescence PLED. Slow solvent drying process has been demonstrated to significantly increase device efficiency in poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C 61-butyric acid methyl ester (PCBM) mixture polymer solar cell. From the mobility study by time of flight, the increase of efficiency can be well correlated to the improved carrier transport property due to P3HT crystallization during slow solvent drying. And it is found that, similar to PLED, balanced carrier mobility is essential in high efficient polymer solar cell. There is also a revolution in our device fabrication method. A unique device fabrication method is presented by an electronic glue based lamination process combined with interface modification as a one-step polymer solar cell fabrication process. It can completely skip the thermal evaporation process, and benefit device lifetime by several merits: no air reactive. The device obtained is metal free, semi-transparent, flexible, self-encapsulated, and comparable efficiency with that by regular method. We found the photomultiplication (PM) phenomenon in C60 based device accidentally. The high PM factor makes it good candidate for photo detector. The high gain was assigned to the trapped-charge induced enhanced-injection at C60/PEDOT:PSS interface.

Effect of color visualization and display hardware on the visual assessment of pseudocolor medical images

PubMed Central

Zabala-Travers, Silvina; Choi, Mina; Cheng, Wei-Chung

2015-01-01

Purpose: Even though the use of color in the interpretation of medical images has increased significantly in recent years, the ad hoc manner in which color is handled and the lack of standard approaches have been associated with suboptimal and inconsistent diagnostic decisions with a negative impact on patient treatment and prognosis. The purpose of this study is to determine if the choice of color scale and display device hardware affects the visual assessment of patterns that have the characteristics of functional medical images. Methods: Perfusion magnetic resonance imaging (MRI) was the basis for designing and performing experiments. Synthetic images resembling brain dynamic-contrast enhanced MRI consisting of scaled mixtures of white, lumpy, and clustered backgrounds were used to assess the performance of a rainbow (“jet”), a heated black-body (“hot”), and a gray (“gray”) color scale with display devices of different quality on the detection of small changes in color intensity. The authors used a two-alternative, forced-choice design where readers were presented with 600 pairs of images. Each pair consisted of two images of the same pattern flipped along the vertical axis with a small difference in intensity. Readers were asked to select the image with the highest intensity. Three differences in intensity were tested on four display devices: a medical-grade three-million-pixel display, a consumer-grade monitor, a tablet device, and a phone. Results: The estimates of percent correct show that jet outperformed hot and gray in the high and low range of the color scales for all devices with a maximum difference in performance of 18% (confidence intervals: 6%, 30%). Performance with hot was different for high and low intensity, comparable to jet for the high range, and worse than gray for lower intensity values. Similar performance was seen between devices using jet and hot, while gray performance was better for handheld devices. Time of performance was shorter with jet. Conclusions: Our findings demonstrate that the choice of color scale and display hardware affects the visual comparative analysis of pseudocolor images. Follow-up studies in clinical settings are being considered to confirm the results with patient images. PMID:26127048

Advanced Graphene-Based Binder-Free Electrodes for High-Performance Energy Storage.

PubMed

Ji, Junyi; Li, Yang; Peng, Wenchao; Zhang, Guoliang; Zhang, Fengbao; Fan, Xiaobin

2015-09-23

The increasing demand for energy has triggered tremendous research effort for the development of high-performance and durable energy-storage devices. Advanced graphene-based electrodes with high electrical conductivity and ion accessibility can exhibit superior electrochemical performance in energy-storage devices. Among them, binder-free configurations can enhance the electron conductivity of the electrode, which leads to a higher capacity by avoiding the addition of non-conductive and inactive binders. Graphene, a 2D material, can be fabricated into a porous and flexible structure with an interconnected conductive network. Such a conductive structure is favorable for both electron and ion transport to the entire electrode surface. In this review, the main processes used to prepare binder-free graphene-based hybrids with high porosity and well-designed electron conductive networks are summarized. Then, the applications of free-standing binder-free graphene-based electrodes in energy-storage devices are discussed. Future research aspects with regard to overcoming the technological bottlenecks are also proposed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DC and analog/RF performance optimisation of source pocket dual work function TFET

NASA Astrophysics Data System (ADS)

Raad, Bhagwan Ram; Sharma, Dheeraj; Kondekar, Pravin; Nigam, Kaushal; Baronia, Sagar

2017-12-01

We investigate a systematic study of source pocket tunnel field-effect transistor (SP TFET) with dual work function of single gate material by using uniform and Gaussian doping profile in the drain region for ultra-low power high frequency high speed applications. For this, a n+ doped region is created near the source/channel junction to decrease the depletion width results in improvement of ON-state current. However, the dual work function of the double gate is used for enhancement of the device performance in terms of DC and analog/RF parameters. Further, to improve the high frequency performance of the device, Gaussian doping profile is considered in the drain region with different characteristic lengths which decreases the gate to drain capacitance and leads to drastic improvement in analog/RF figures of merit. Furthermore, the optimisation is performed with different concentrations for uniform and Gaussian drain doping profile and for various sectional length of lower work function of the gate electrode. Finally, the effect of temperature variation on the device performance is demonstrated.

High performance, high bandgap, lattice-mismatched, GaInP solar cells

DOEpatents

Wanlass, Mark W; Carapella, Jeffrey J; Steiner, Myles A

2016-11-01

High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.

High performance, high bandgap, lattice-mismatched, GaInP solar cells

DOEpatents

Wanlass, Mark W.; Carapella, Jeffrey J.; Steiner, Myles A.

2014-07-08

High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.

Rapid and Checkable Electrical Post-Treatment Method for Organic Photovoltaic Devices

PubMed Central

Park, Sangheon; Seo, Yu-Seong; Shin, Won Suk; Moon, Sang-Jin; Hwang, Jungseek

2016-01-01

Post-treatment processes improve the performance of organic photovoltaic devices by changing the microscopic morphology and configuration of the vertical phase separation in the active layer. Thermal annealing and solvent vapor (or chemical) treatment processes have been extensively used to improve the performance of bulk-heterojunction (BHJ) organic photovoltaic (OPV) devices. In this work we introduce a new post-treatment process which we apply only electrical voltage to the BHJ-OPV devices. We used the commercially available P3HT [Poly(3-hexylthiophene)] and PC61BM (Phenyl-C61-Butyric acid Methyl ester) photovoltaic materials as donor and acceptor, respectively. We monitored the voltage and current applied to the device to check for when the post-treatment process had been completed. This electrical treatment process is simpler and faster than other post-treatment methods, and the performance of the electrically treated solar cell is comparable to that of a reference (thermally annealed) device. Our results indicate that the proposed treatment process can be used efficiently to fabricate high-performance BHJ-OPV devices. PMID:26932767

Contact engineering for efficient charge injection in organic transistors with low-cost metal electrodes

NASA Astrophysics Data System (ADS)

Panigrahi, D.; Kumar, S.; Dhar, A.

2017-10-01

Controlling charge injection at the metal-semiconductor interface is very crucial for organic electronic devices in general as it can significantly influence the overall device performance. Herein, we report a facile, yet efficient contact modification approach, to enhance the hole injection efficiency through the incorporation of a high vacuum deposited TPD [N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenzidine] interlayer between the electrodes and the active semiconducting layer. The device performance parameters such as mobility and on/off ratio improved significantly after the inclusion of the TPD buffer layer, and more interestingly, the devices with cost effective Ag and Cu electrodes were able to exhibit a superior device performance than the typically used Au source-drain devices. We have also observed that this contact modification technique can be even more effective than commonly used metal oxide interface modifying layers. Our investigations demonstrate the efficacy of the TPD interlayer in effectively reducing the interfacial contact resistance through the modification of pentacene energy levels, which consequently results in the substantial improvement in the device performances.

Multi-transmitter/multi-receiver high-speed measurements of soil resistivity and induced polarization - Hydrological application

NASA Astrophysics Data System (ADS)

Gance, Julien; Texier, Benoît; Leite, Orlando; Bernard, Jean; Truffert, Catherine; Lebert, François; Yamashita, Yoshihiro

2016-04-01

Electrical resistivity tomography (ERT) is an adapted tool for the monitoring of soil moisture variations in aquifers (Binley et al., 2015). Nevertheless, in some specific cases, like for highly permeable soils or fractured aquifers, the measurements from the device can be slower than the water flow through the entire investigated zone. Therefore, the monitoring of such phenomena cannot be performed with classical devices. In such cases, we require a high-speed measurement of soils resistivity. Since 20 years, the speed of acquisition of the resistivity meters has been improved by the development of multi-channel devices allowing to perform multi-electrode (> 4) measurements. The switching capabilities of the actual devices allow to measure over long profiles up to hundreds of electrodes only using one transmitter. Based on this multi-receiver technology and on previous work from Yamashita et al. (2013), authors have developed a 250 W multi-transmitter device for the high speed measurement of resistivity and induced polarization. Current is therefore injected simultaneously in the soil through six injection electrodes. The injected current is coded for each transmitter using Code Division Multiple Access (CDMA, Yamashita et al., 2014) so that the different voltages induced by each sources can be reconstructed from the total potential measurement signal at each receiver, allowing to save acquisition time. The first operational prototype features 3 transmitters and 6 receivers. Its performances are compared to a mono-transmitter device for different sequences of acquisition in 2D and 3D configurations both in theory and on real field data acquired on a shallow sedimentary aquifer in the Loire valley in France. This device is promising for the accurate monitoring of rapid water flows in heterogeneous aquifers.

Robust High-performance Dye-sensitized Solar Cells Based on Ionic Liquid-sulfolane Composite Electrolytes.

PubMed

Lau, Genevieve P S; Décoppet, Jean-David; Moehl, Thomas; Zakeeruddin, Shaik M; Grätzel, Michael; Dyson, Paul J

2015-12-16

Novel ionic liquid-sulfolane composite electrolytes based on the 1,2,3-triazolium family of ionic liquids were developed for dye-sensitized solar cells. The best performing device exhibited a short-circuit current density of 13.4 mA cm(-2), an open-circuit voltage of 713 mV and a fill factor of 0.65, corresponding to an overall power conversion efficiency (PCE) of 6.3%. In addition, these devices are highly stable, retaining more than 95% of the initial device PCE after 1000 hours of light- and heat-stress. These composite electrolytes show great promise for industrial application as they allow for a 14.5% improvement in PCE, compared to the solvent-free eutectic ionic liquid electrolyte system, without compromising device stability.

Morphology Engineering: A Route to Highly Reproducible and High Efficiency Perovskite Solar Cells.

PubMed

Bi, Dongqin; Luo, Jingshan; Zhang, Fei; Magrez, Arnaud; Athanasopoulou, Evangelia Nefeli; Hagfeldt, Anders; Grätzel, Michael

2017-04-10

Despite the rapid increase in the performance of perovskite solar cells (PSC), they still suffer from low lab-to-lab or people-to-people reproducibility. Aiming for a universal condition to high-performance devices, we investigated the morphology evolution of a composite perovskite by tuning annealing temperature and precursor concentration of the perovskite film. Here, we introduce thermal annealing as a powerful tool to generate a well-controlled excess of PbI 2 in the perovskite formulation and show that this benefits the photovoltaic performance. We demonstrated the correlation between the film microstructure and electronic property and device performance. An optimized average grain size/thickness aspect ratio of the perovskite crystallite is identified, which brings about a highly reproducible power conversion efficiency (PCE) of 19.5 %, with a certified value of 19.08 %. Negligible hysteresis and outstanding morphology stability are observed with these devices. These findings lay the foundation for further boosting the PCE of PSC and can be very instructive for fabrication of high-quality perovskite films for a variety of applications, such as light-emitting diodes, field-effect transistors, and photodetectors. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bridging ultrahigh-Q devices and photonic circuits

NASA Astrophysics Data System (ADS)

Yang, Ki Youl; Oh, Dong Yoon; Lee, Seung Hoon; Yang, Qi-Fan; Yi, Xu; Shen, Boqiang; Wang, Heming; Vahala, Kerry

2018-05-01

Optical microresonators are essential to a broad range of technologies and scientific disciplines. However, many of their applications rely on discrete devices to attain challenging combinations of ultra-low-loss performance (ultrahigh Q) and resonator design requirements. This prevents access to scalable fabrication methods for photonic integration and lithographic feature control. Indeed, finding a microfabrication bridge that connects ultrahigh-Q device functions with photonic circuits is a priority of the microcavity field. Here, an integrated resonator having a record Q factor over 200 million is presented. Its ultra-low-loss and flexible cavity design brings performance to integrated systems that has been the exclusive domain of discrete silica and crystalline microcavity devices. Two distinctly different devices are demonstrated: soliton sources with electronic repetition rates and high-coherence/low-threshold Brillouin lasers. This multi-device capability and performance from a single integrated cavity platform represents a critical advance for future photonic circuits and systems.

Characterization and reliability of aluminum gallium nitride/gallium nitride high electron mobility transistors

NASA Astrophysics Data System (ADS)

Douglas, Erica Ann

Compound semiconductor devices, particularly those based on GaN, have found significant use in military and civilian systems for both microwave and optoelectronic applications. Future uses in ultra-high power radar systems will require the use of GaN transistors operated at very high voltages, currents and temperatures. GaN-based high electron mobility transistors (HEMTs) have proven power handling capability that overshadows all other wide band gap semiconductor devices for high frequency and high-power applications. Little conclusive research has been reported in order to determine the dominating degradation mechanisms of the devices that result in failure under standard operating conditions in the field. Therefore, it is imperative that further reliability testing be carried out to determine the failure mechanisms present in GaN HEMTs in order to improve device performance, and thus further the ability for future technologies to be developed. In order to obtain a better understanding of the true reliability of AlGaN/GaN HEMTs and determine the MTTF under standard operating conditions, it is crucial to investigate the interaction effects between thermal and electrical degradation. This research spans device characterization, device reliability, and device simulation in order to obtain an all-encompassing picture of the device physics. Initially, finite element thermal simulations were performed to investigate the effect of device design on self-heating under high power operation. This was then followed by a study of reliability of HEMTs and other tests structures during high power dc operation. Test structures without Schottky contacts showed high stability as compared to HEMTs, indicating that degradation of the gate is the reason for permanent device degradation. High reverse bias of the gate has been shown to induce the inverse piezoelectric effect, resulting in a sharp increase in gate leakage current due to crack formation. The introduction of elevated temperatures during high reverse gate bias indicated that device failure is due to the breakdown of an unintentional gate oxide. RF stress of AlGaN/GaN HEMTs showed comparable critical voltage breakdown regime as that of similar devices stressed under dc conditions. Though RF device characteristics showed stability up to a drain bias of 20 V, Schottky diode characteristics degraded substantially at all voltages investigated. Results from both dc and RF stress conditions, under several bias regimes, confirm that the primary root for stress induced degradation was due to the Schottky contact. (Full text of this dissertation may be available via the University of Florida Libraries web site. Please check http://www.uflib.ufl.edu/etd.html)

A high performance transparent resistive switching memory made from ZrO{sub 2}/AlON bilayer structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsai, Tsung-Ling; Chang, Hsiang-Yu; Tseng, Tseung-Yuen, E-mail: tseng@cc.nctu.edu.tw

2016-04-11

In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO{sub 2})/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO{sub 2}/ITO single layer device, the ITO/ZrO{sub 2}/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by formingmore » an asymmetrical conductive filament with the weakest part at the ZrO{sub 2}/AlON interface. Therefore, in the ITO/ZrO{sub 2}/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.« less

Fully-printed high-performance organic thin-film transistors and circuitry on one-micron-thick polymer films

NASA Astrophysics Data System (ADS)

Fukuda, Kenjiro; Takeda, Yasunori; Yoshimura, Yudai; Shiwaku, Rei; Tran, Lam Truc; Sekine, Tomohito; Mizukami, Makoto; Kumaki, Daisuke; Tokito, Shizuo

2014-06-01

Thin, ultra-flexible devices that can be manufactured in a process that covers a large area will be essential to realizing low-cost, wearable electronic applications including foldable displays and medical sensors. The printing technology will be instrumental in fabricating these novel electronic devices and circuits; however, attaining fully printed devices on ultra-flexible films in large areas has typically been a challenge. Here we report on fully printed organic thin-film transistor devices and circuits fabricated on 1-μm-thick parylene-C films with high field-effect mobility (1.0 cm2 V-1 s-1) and fast operating speeds (about 1 ms) at low operating voltages. The devices were extremely light (2 g m-2) and exhibited excellent mechanical stability. The devices remained operational even under 50% compressive strain without significant changes in their performance. These results represent significant progress in the fabrication of fully printed organic thin-film transistor devices and circuits for use in unobtrusive electronic applications such as wearable sensors.

Compact high reliability fiber coupled laser diodes for avionics and related applications

NASA Astrophysics Data System (ADS)

Daniel, David R.; Richards, Gordon S.; Janssen, Adrian P.; Turley, Stephen E. H.; Stockton, Thomas E.

1993-04-01

This paper describes a newly developed compact high reliability fiber coupled laser diode which is capable of providing enhanced performance under extreme environmental conditions including a very wide operating temperature range. Careful choice of package materials to minimize thermal and mechanical stress, used with proven manufacturing methods, has resulted in highly stable coupling of the optical fiber pigtail to a high performance MOCVD-grown Multi-Quantum Well laser chip. Electro-optical characteristics over temperature are described together with a demonstration of device stability over a range of environmental conditions. Real time device lifetime data is also presented.

Multifunctional organic thin films and their electronic/optical properties

NASA Astrophysics Data System (ADS)

Shao, Yan

The concept of multifunctional organic thin films and their electronic/optical properties has been applied to organic functional device design, fabrication, and characterization. The organic devices involve organic light-emitting diodes (OLEDs) and organic photovoltaic devices (OPV) in this dissertation. In the research of graded junction structure of OLEDs, two kinds of naturally-formed graded junction (NFGJ) structures, sharp and shallow graded junctions, can be formed using single thermal evaporation boat loaded with uniformly mixed charge transport and light-emitting materials. OLEDs with NFGJ have been demonstrated in Chapter 3; the performance is comparable to the heterojunction OLEDs, but with better device lifetime. A novel method to prepare highly uniform mixed organic solid solutions through a high temperature and high-pressure fusion process has been demonstrated in Chapter 4. A series of fused organic solid solution (FOSS) compounds with NPD doped with different organic emitting dopants were prepared and DSC technique was utilized to determine the thermal characteristics. For the first time, the schematic phase diagram for this binary system has been obtained. High performance OLEDs of single color and white emission were fabricated and the device properties were characterized. In Chapter 5, an efficient photovoltaic heterojunction of tetracene and fullerene has been investigated and high performance organic solar cells have been demonstrated by thermal deposition and successive heat treatment. The preliminary conclusion for this enhancement is discussed and supported by atomic force microscopy images, absorption spectra and x-ray diffraction analysis. Additionally, an effective organic photovoltaic heterojunction based on the typical triplet material PtOEP was demonstrated. It is believed that introducing appropriate organic materials with long exciton lifetime is a very promising way to improve photovoltaic performance.

High-accuracy direct ZT and intrinsic properties measurement of thermoelectric couple devices.

PubMed

Kraemer, D; Chen, G

2014-04-01

Advances in thermoelectric materials in recent years have led to significant improvements in thermoelectric device performance and thus, give rise to many new potential applications. In order to optimize a thermoelectric device for specific applications and to accurately predict its performance ideally the material's figure of merit ZT as well as the individual intrinsic properties (Seebeck coefficient, electrical resistivity, and thermal conductivity) should be known with high accuracy. For that matter, we developed two experimental methods in which the first directly obtains the ZT and the second directly measures the individual intrinsic leg properties of the same p/n-type thermoelectric couple device. This has the advantage that all material properties are measured in the same sample direction after the thermoelectric legs have been mounted in the final device. Therefore, possible effects from crystal anisotropy and from the device fabrication process are accounted for. The Seebeck coefficients, electrical resistivities, and thermal conductivities are measured with differential methods to minimize measurement uncertainties to below 3%. The thermoelectric couple ZT is directly measured with a differential Harman method which is in excellent agreement with the calculated ZT from the individual leg properties. The errors in both the directly measured and calculated thermoelectric couple ZT are below 5% which is significantly lower than typical uncertainties using commercial methods. Thus, the developed technique is ideal for characterizing assembled couple devices and individual thermoelectric materials and enables accurate device optimization and performance predictions. We demonstrate the methods by measuring a p/n-type thermoelectric couple device assembled from commercial bulk thermoelectric Bi2Te3 elements in the temperature range of 30 °C-150 °C and discuss the performance of the couple thermoelectric generator in terms of its efficiency and materials' self-compatibility.

In-situ device integration of large-area patterned organic nanowire arrays for high-performance optical sensors

PubMed Central

Wu, Yiming; Zhang, Xiujuan; Pan, Huanhuan; Deng, Wei; Zhang, Xiaohong; Zhang, Xiwei; Jie, Jiansheng

2013-01-01

Single-crystalline organic nanowires (NWs) are important building blocks for future low-cost and efficient nano-optoelectronic devices due to their extraordinary properties. However, it remains a critical challenge to achieve large-scale organic NW array assembly and device integration. Herein, we demonstrate a feasible one-step method for large-area patterned growth of cross-aligned single-crystalline organic NW arrays and their in-situ device integration for optical image sensors. The integrated image sensor circuitry contained a 10 × 10 pixel array in an area of 1.3 × 1.3 mm2, showing high spatial resolution, excellent stability and reproducibility. More importantly, 100% of the pixels successfully operated at a high response speed and relatively small pixel-to-pixel variation. The high yield and high spatial resolution of the operational pixels, along with the high integration level of the device, clearly demonstrate the great potential of the one-step organic NW array growth and device construction approach for large-scale optoelectronic device integration. PMID:24287887

Apollo Spacecraft and Saturn V Launch Vehicle Pyrotechnics/Explosive Devices

NASA Technical Reports Server (NTRS)

Interbartolo, Michael

2009-01-01

The Apollo Mission employs more than 210 pyrotechnic devices per mission.These devices are either automatic of commanded from the Apollo spacecraft systems. All devices require high reliability and safety and most are classified as either crew safety critical or mission critical. Pyrotechnic devices have a wide variety of applications including: launch escape tower separation, separation rocket ignition, parachute deployment and release and electrical circuit opening and closing. This viewgraph presentation identifies critical performance, design requirements and safety measures used to ensure quality, reliability and performance of Apollo pyrotechnic/explosive devices. The major components and functions of a typical Apollo pyrotechnic/explosive device are listed and described (initiators, cartridge assemblies, detonators, core charges). The presentation also identifies the major locations and uses for the devices on: the Command and Service Module, Lunar Module and all stages of the launch vehicle.

PIN architecture for ultrasensitive organic thin film photoconductors.

PubMed

Jin, Zhiwen; Wang, Jizheng

2014-06-17

Organic thin film photoconductors (OTFPs) are expected to have wide applications in the field of optical communications, artificial vision and biomedical sensing due to their great advantages of high flexibility and low-cost large-area fabrication. However, their performances are not satisfactory at present: the value of responsivity (R), the parameter that measures the sensitivity of a photoconductor to light, is below 1 AW(-1). We believe such poor performance is resulted from an intrinsic self-limited effect of present bare blend based device structure. Here we designed a PIN architecture for OTFPs, the PIN device exhibits a significantly improved high R value of 96.5 AW(-1). The PIN architecture and the performance the PIN device shows here should represent an important step in the development of OTFPs.

PIN architecture for ultrasensitive organic thin film photoconductors

PubMed Central

Jin, Zhiwen; Wang, Jizheng

2014-01-01

Organic thin film photoconductors (OTFPs) are expected to have wide applications in the field of optical communications, artificial vision and biomedical sensing due to their great advantages of high flexibility and low-cost large-area fabrication. However, their performances are not satisfactory at present: the value of responsivity (R), the parameter that measures the sensitivity of a photoconductor to light, is below 1 AW−1. We believe such poor performance is resulted from an intrinsic self-limited effect of present bare blend based device structure. Here we designed a PIN architecture for OTFPs, the PIN device exhibits a significantly improved high R value of 96.5 AW−1. The PIN architecture and the performance the PIN device shows here should represent an important step in the development of OTFPs. PMID:24936952

Enhanced device performances of a new inverted top-emitting OLEDs with relatively thick Ag electrode.

PubMed

Park, So-Ra; Suh, Min Chul

2018-02-19

To improve the device performances of top-emitting organic light emitting diodes (TEOLEDs), we developed a new inverted TEOLEDs structure with silver (Ag) metal as a semi-transparent top electrode. Especially, we found that the use of relatively thick Ag electrode without using any carrier injection layer is beneficial to realize highly efficient device performances. Also, we could insert very thick overlying hole transport layer (HTL) on the emitting layer (EML) which could be very helpful to suppress the surface plasmon polariton (SPP) coupling if it is applied to the common bottom-emission OLEDs (BEOLEDs). As a result, we could realize noteworthy high current efficiency of approximately ~188.1 cd/A in our new inverted TEOLEDs with 25 nm thick Ag electrode.

Rational material, interface, and device engineering for high-performance polymer and perovskite solar cells (Presentation Recording)

NASA Astrophysics Data System (ADS)

Jen, Alex K.

2015-10-01

The performance of polymer and hybrid solar cells is also strongly dependent on their efficiency in harvesting light, exciton dissociation, charge transport, and charge collection at the metal/organic/metal oxide or the metal/perovskite/metal oxide interfaces. Our laboratory employs a molecular engineering approach to develop processible low band-gap polymers with high charge carrier mobility that can enhance power conversion efficiency of the single junction solar cells to values as high as ~11%. We have also developed several innovative strategies to modify the interface of bulk-heterojunction devices and create new device architectures to fully explore their potential for solar applications. In this talk, the integrated approach of combining material design, interface, and device engineering to significantly improve the performance of polymer and hybrid perovskite photovoltaic cells will be discussed. Specific emphasis will be placed on the development of low band-gap polymers with reduced reorganizational energy and proper energy levels, formation of optimized morphology of active layer, and minimized interfacial energy barriers using functional conductive surfactants. At the end, several new device architectures and optical engineering strategies to make tandem cells and semitransparent solar cells will be discussed to explore the full promise of polymer and perovskite hybrid solar cells.

Hierarchical ternary Ni-Co-Se nanowires for high-performance supercapacitor device design.

PubMed

Guo, Kailu; Cui, Shizhong; Hou, Hongwei; Chen, Weihua; Mi, Liwei

2016-12-06

Large-scale uniform Ni-Co-Se bimetallic ternary nanowires have been successfully synthesized through a successive cation exchange. First, NiSe nanowires in situ grown on nickel foam (NF) were prepared by a facile solvothermal route. Next, a series of ternary materials possessing different proportions of Ni and Co were fabricated by a Co-exchange method using the Ni@NiSe material as a template, which effectively achieved morphological inheritance from the parent material. To explore the electrochemical performance, all synthetic materials were assembled into asymmetric supercapacitor devices. Among asymmetric supercapacitor devices, the Ni@Ni 0.8 Co 0.2 Se//active carbon (AC) device exhibited a high specific capacitance of 86 F g -1 at a current density of 1 A g -1 and excellent cycling stability with virtually no decrease in capacitance after 2000 continuous charge-discharge cycles. This device still delivered an energy density of 17 Wh kg -1 even at a high power density of 1526.8 W kg -1 . These superior electrochemical properties of Ni@Ni 0.8 Co 0.2 Se as an electrode material for supercapacitor devices confirmed the synergistic effect between Co and Ni ions, suggesting their potential application in the field of energy storage.

Functionalized graphene and other two-dimensional materials for photovoltaic devices: device design and processing.

PubMed

Liu, Zhike; Lau, Shu Ping; Yan, Feng

2015-08-07

Graphene is the thinnest two-dimensional (2D) carbon material and has many advantages including high carrier mobilities and conductivity, high optical transparency, excellent mechanical flexibility and chemical stability, which make graphene an ideal material for various optoelectronic devices. The major applications of graphene in photovoltaic devices are for transparent electrodes and charge transport layers. Several other 2D materials have also shown advantages in charge transport and light absorption over traditional semiconductor materials used in photovoltaic devices. Great achievements in the applications of 2D materials in photovoltaic devices have been reported, yet numerous challenges still remain. For practical applications, the device performance should be further improved by optimizing the 2D material synthesis, film transfer, surface functionalization and chemical/physical doping processes. In this review, we will focus on the recent advances in the applications of graphene and other 2D materials in various photovoltaic devices, including organic solar cells, Schottky junction solar cells, dye-sensitized solar cells, quantum dot-sensitized solar cells, other inorganic solar cells, and perovskite solar cells, in terms of the functionalization techniques of the materials, the device design and the device performance. Finally, conclusions and an outlook for the future development of this field will be addressed.

Understanding charge transport and recombination losses in high performance polymer solar cells with non-fullerene acceptors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Xuning; Zuo, Xiaobing; Xie, Shenkun

Photovoltaic characteristics, recombination and charge transport properties are investigated. The determined recombination reduction factor can reconcile the supreme device performance in organic solar cells using non-fullerene ITIC acceptor and severe carrier losses in all-polymer devices with P(NDI2OD-T2).

Molecular materials for high performance OPV devices (Conference Presentation)

NASA Astrophysics Data System (ADS)

Jones, David J.

2016-09-01

We recently reported the high performing molecular donor for OPV devices based on a benzodithiophene core, a terthiophene bridge and a rhodamine acceptor (BTR) [1]. In this work we optimized side-chain placement of a known chromophore by ensuring the thiophene hexyl side-chains are regioregular, which should allow the chromophore to lie flat. The unexpected outcome was a nematic liquid crystalline material with significantly improved performance (now 9.6% PCE), excellent charge transport properties, reduced geminate recombination rates and excellent performance with active layers up to 400nm. Three phase changes were indicated by DSC analysis with a melt to a crystalline domain at 175 oC, transition to a nematic liquid crystalline domain at 186 oC and an isotropic melt at 196 oC. In our desire to better understand the structure property relationships of this class of p-type organic semiconductor we have synthesized a series of analogues where the length of the chromophore has been altered through modification of the oligothiophene bridge to generate, the monothiophene (BMR), the bisthiophene (BBR), the known terthiophene (BTR), the quaterthiophene (BQR) and the pentathiophene (BPR). BMR, BBR and BPR have clean melting points while BQR, like BTR shows a complicated series of phase transitions. Device efficiencies after solvent vapour annealing are BMR (3.5%), BBR (6.0%), BTR (9.3%), BQR (9.4%), and BPR (8.7%) unoptimised. OPV devices with BTR in the active layer are not stable under thermal annealing, however the bridge extended BQR and BPR form thermally stable devices. We are currently optimising these devices, but initial results indicate PCEs >9% for thermally annealed devices containing BQR, while BPR devices have not yet been optimised and have PCEs > 8%. In order to develop the device performance we have included BQR in ternary devices with the commercially available PTB7-Th and we report device efficiencies of over 10.5%. We are currently optimising device assembly and annealing conditions and relating these back to key materials properties. I will discuss the development of these new materials, their materials properties, structural data, and optimised device performance. I will examination of chromophore length on the Nematic Liquid Crystalline properties and on materials development and performance resulting in materials with > 9% PCE in OPV. [1] Sun, K.; Xiao, Z.; Lu, S.; Zajaczkowski, W.; Pisula, W.; Hanssen, E.; White, J. M.; Williamson, R. M.; Subbiah, J.; Ouyang, J.; Holmes, A. B.; Wong, W. W.; Jones, D. J., Nat. Commun. 2015, 6, 6013. DOI: 10.1038/ncomms7013

Thermoreflectance microscopy measurements of the Joule heating characteristics of high- Tc superconducting terahertz emitters

NASA Astrophysics Data System (ADS)

Kashiwagi, Takanari; Tanaka, Taiga; Watanabe, Chiharu; Kubo, Hiroyuki; Komori, Yuki; Yuasa, Takumi; Tanabe, Yuki; Ota, Ryusei; Kuwano, Genki; Nakamura, Kento; Tsujimoto, Manabu; Minami, Hidetoshi; Yamamoto, Takashi; Klemm, Richard A.; Kadowaki, Kazuo

2017-12-01

Joule heating is the central issue in order to develop high-power and high-performance terahertz (THz) emission from mesa devices employing the intrinsic Josephson junctions in a layered high transition-temperature Tc superconductor. Here, we describe a convenient local thermal measurement technique using charge-coupled-device-based thermoreflectance microscopy, with the highest spatial resolution to date. This technique clearly proves that the relative temperature changes of the mesa devices between different bias points on the current-voltage characteristics can be measured very sensitively. In addition, the heating characteristics on the surface of the mesa devices can be detected more directly without any special treatment of the mesa surface such as previous coatings with SiC micro-powders. The results shown here clearly indicate that the contact resistance strongly affects the formation of an inhomogeneous temperature distribution on the mesa structures. Since the temperature and sample dependencies of the Joule heating characteristics can be measured quickly, this simple thermal evaluation technique is a useful tool to check the quality of the electrical contacts, electrical wiring, and sample defects. Thus, this technique could help to reduce the heating problems and to improve the performance of superconducting THz emitter devices.

Comparing performance of mothers using simplified mid-upper arm circumference (MUAC) classification devices with an improved MUAC insertion tape in Isiolo County, Kenya.

PubMed

Grant, Angeline; Njiru, James; Okoth, Edgar; Awino, Imelda; Briend, André; Murage, Samuel; Abdirahman, Saida; Myatt, Mark

2018-01-01

A novel approach for improving community case-detection of acute malnutrition involves mothers/caregivers screening their children for acute malnutrition using a mid-upper arm circumference (MUAC) insertion tape. The objective of this study was to test three simple MUAC classification devices to determine whether they improved the sensitivity of mothers/caregivers at detecting acute malnutrition. Prospective, non-randomised, partially-blinded, clinical diagnostic trial describing and comparing the performance of three "Click-MUAC" devices and a MUAC insertion tape. The study took place in twenty-one health facilities providing integrated management of acute malnutrition (IMAM) services in Isiolo County, Kenya. Mothers/caregivers classified their child ( n =1040), aged 6-59 months, using the "Click-MUAC" devices and a MUAC insertion tape. These classifications were compared to a "gold standard" classification (the mean of three measurements taken by a research assistant using the MUAC insertion tape). The sensitivity of mother/caregiver classifications was high for all devices (>93% for severe acute malnutrition (SAM), defined by MUAC < 115 mm, and > 90% for global acute malnutrition (GAM), defined by MUAC < 125 mm). Mother/caregiver sensitivity for SAM and GAM classification was higher using the MUAC insertion tape (100% sensitivity for SAM and 99% sensitivity for GAM) than using "Click-MUAC" devices. Younden's J for SAM classification, and sensitivity for GAM classification, were significantly higher for the MUAC insertion tape (99% and 99% respectively). Specificity was high for all devices (>96%) with no significant difference between the "Click-MUAC" devices and the MUAC insertion tape. The results of this study indicate that, although the "Click-MUAC" devices performed well, the MUAC insertion tape performed best. The results for sensitivity are higher than found in previous studies. The high sensitivity for both SAM and GAM classification by mothers/caregivers with the MUAC insertion tape could be due to the use of an improved MUAC tape design which has a number of new design features. The one-on-one demonstration provided to mothers/caregivers on the use of the devices may also have helped improve sensitivity. The results of this study provide evidence that mothers/caregivers can perform sensitive and specific classifications of their child's nutritional status using MUAC. Clinical trials registration number: NCT02833740.

Position-dependent performance of copper phthalocyanine based field-effect transistors by gold nanoparticles modification.

PubMed

Luo, Xiao; Li, Yao; Lv, Wenli; Zhao, Feiyu; Sun, Lei; Peng, Yingquan; Wen, Zhanwei; Zhong, Junkang; Zhang, Jianping

2015-01-21

A facile fabrication and characteristics of copper phthalocyanine (CuPc)-based organic field-effect transistor (OFET) using the gold nanoparticles (Au NPs) modification is reported, thereby achieving highly improved performance. The effect of Au NPs located at three different positions, that is, at the SiO2/CuPc interface (device B), embedding in the middle of CuPc layer (device C), and on the top of CuPc layer (device D), is investigated, and the results show that device D has the best performance. Compared with the device without Au NPs (reference device A), device D displays an improvement of field-effect mobility (μ(sat)) from 1.65 × 10(-3) to 5.51 × 10(-3) cm(2) V(-1) s(-1), and threshold voltage decreases from -23.24 to -16.12 V. Therefore, a strategy for the performance improvement of the CuPc-based OFET with large field-effect mobility and saturation drain current is developed, on the basis of the concept of nanoscale Au modification. The model of an additional electron transport channel formation by FET operation at the Au NPs/CuPc interface is therefore proposed to explain the observed performance improvement. Optimum CuPc thickness is confirmed to be about 50 nm in the present study. The device-to-device uniformity and time stability are discussed for future application.

Liquid Crystal on Silicon Wavefront Corrector

NASA Technical Reports Server (NTRS)

Pouch, John; Miranda, Felix; Wang, Xinghua; Bos, Philip, J.

2004-01-01

A low cost, high resolution, liquid crystal on silicon, spatial light modulator has been developed for the correction of huge aberrations in an optical system where the polarization dependence and the chromatic nature are tolerated. However, the overall system performance suggests that this device is also suitable for real time correction of aberration in human eyes. This device has a resolution of 1024 x 768, and is driven by an XGA display driver. The effective stroke length of the device is 700 nm and 2000 nm for the visible and IR regions of the device, respectively. The response speeds are 50 Hz and 5 Hz, respectively, which are fast enough for real time adaptive optics for aberrations in human eyes. By modulating a wavefront of 2 pi, this device can correct for arbitrary high order wavefront aberrations since the 2-D pixel array is independently controlled by the driver. The high resolution and high accuracy of the device allow for diffraction limited correction of the tip and tilt or defocus without an additional correction loop. We have shown that for every wave of aberration, an 8 step blazed grating is required to achieve high diffraction efficiency around 80%. In light of this, up to 125 waves peak to valley of tip and tilt can be corrected if we choose the simplest aberration. Corrections of 34 waves of aberration, including high order Zernicke terms in a high magnification telescope, to diffraction limited performance (residual wavefront aberration less than 1/30 lambda at 632.8 nm) have been observed at high efficiency.

Proceedings of the Conference on High-temperature Electronics

NASA Technical Reports Server (NTRS)

1981-01-01

The development of electronic devices for use in high temperature environments is addressed. The instrumentational needs of planetary exploration, fossil and nuclear power reactors, turbine engine monitoring, and well logging are defined. Emphasis is place on the fabrication and performance of materials and semiconductor devices, circuits and systems and packaging.

The Development of Si and SiGe Technologies for Microwave and Millimeter-Wave Integrated Circuits

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Alterovitz, Samuel A.; Katehi, Linda P. B.; Bhattacharya, Pallab K.

1997-01-01

Historically, microwave technology was developed by military and space agencies from around the world to satisfy their unique radar, communication, and science applications. Throughout this development phase, the sole goal was to improve the performance of the microwave circuits and components comprising the systems. For example, power amplifiers with output powers of several watts over broad bandwidths, low noise amplifiers with noise figures as low as 3 dB at 94 GHz, stable oscillators with low noise characteristics and high output power, and electronically steerable antennas were required. In addition, the reliability of the systems had to be increased because of the high monetary and human cost if a failure occurred. To achieve these goals, industry, academia and the government agencies supporting them chose to develop technologies with the greatest possibility of surpassing the state of the art performance. Thus, Si, which was already widely used for digital circuits but had material characteristics that were perceived to limit its high frequency performance, was bypassed for a progression of devices starting with GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and ending with InP Pseudomorphic High Electron Mobility Transistors (PHEMTs). For each new material or device structure, the electron mobility increased, and therefore, the high frequency characteristics of the device were improved. In addition, ultra small geometry lithographic processes were developed to reduce the gate length to 0.1 pm which further increases the cutoff frequency. The resulting devices had excellent performance through the millimeter-wave spectrum.

Large cooling differentials and high heat flux capability with p-type Bi2Te3/Sb2Te3 and n-type Bi2Te3/Bi2SexTe3-x Superlattice Thermoelectric Devices

NASA Astrophysics Data System (ADS)

Bulman, Gary; Siivola, Ed; Wiitala, Ryan; Grant, Brian; Pierce, Jonathan; Venkatasubramanian, Rama

2007-03-01

Thin film superlattice (SL) based thermoelectric (TE) devices offer the potential for improved efficiency and high heat flux cooling over conventional bulk materials. Recently, we have demonstrated external cooling of 55K and heat pumping capacity of 128 W/cm^2. These high heat fluxes in thin film devices, while attractive for cooling hot-spots in electronics, also make the device performance sensitive to various thermal resistances in the device structure. We will discuss advances in the cooling performance of Bi2Te3-based SL TE devices and describe a method to extract device material parameters, including thermal resistance, from measurements of their δT-I-V characteristics. These parameters will be compared to values obtained through Hall and Seebeck coefficient measurement on epitaxial materials. Results will be presented for both single couple and multi-couple modules, as well as multi-stage cascaded devices made with these materials. Single stage cooling couples with δTmax of 57.8K (Tc˜242K) and multi-stage modules with δTmax˜92.2K (Tc˜209K) have been measured. G.E. Bulman, E. Siivola, B. Shen and R. Venkatasubramanian, Appl. Phys. Lett. 89, 122117 (2006).

Highly Conductive PEDOT:PSS Transparent Hole Transporting Layer with Solvent Treatment for High Performance Silicon/Organic Hybrid Solar Cells.

PubMed

Li, Qingduan; Yang, Jianwei; Chen, Shuangshuang; Zou, Jizhao; Xie, Weiguang; Zeng, Xierong

2017-08-23

Efficient Si/organic hybrid solar cells were fabricated with dimethyl sulfoxide (DMSO) and surfactant-doped poly(3,4-ethylenedioxythiophene): polystyrene (PEDOT:PSS). A post-treatment on PEDOT:PSS films with polar solvent was performed to increase the device performance. We found that the performance of hybrid solar cells increase with the polarity of solvent. A high conductivity of 1105 S cm - 1 of PEDOT:PSS was achieved by adopting methanol treatment, and the best efficiency of corresponding hybrid solar cells reaches 12.22%. X-ray photoelectron spectroscopy (XPS) and RAMAN spectroscopy were utilized to conform to component changes of PEDOT:PSS films after solvent treatment. It was found that the removal of the insulator PSS from the film and the conformational changes are the determinants for the device performance enhancement. Electrochemical impedance spectroscopy (EIS) was used to investigate the recombination resistance and capacitance of methanol-treated and untreated hybrid solar cells, indicating that methanol-treated devices had a larger recombination resistance and capacitance. Our findings bring a simple and efficient way for improving the performance of hybrid solar cell.

High Performance Organic Materials and Devices

DTIC Science & Technology

2006-03-31

on this material exhibited external quantum efficiency of 2.48% and electroluminescence efficiency as high as 3.33 cd/A. 15. SUBJECT TERMS 16...International de L’Eclairage coordinate at (0.164, 0.188). The external quantum efficiency of 2.48% and electroluminescence efficiency as high as 3.33 cd...more than 90% absorption in active layer, and highly balanced carrier transport. 4 5. High efficient blue- electroluminescence device shows maximum

Bioinspired Graphene-Based Nanocomposites and Their Application in Flexible Energy Devices.

PubMed

Wan, Sijie; Peng, Jingsong; Jiang, Lei; Cheng, Qunfeng

2016-09-01

Graphene is the strongest and stiffest material ever identified and the best electrical conductor known to date, making it an ideal candidate for constructing nanocomposites used in flexible energy devices. However, it remains a great challenge to assemble graphene nanosheets into macro-sized high-performance nanocomposites in practical applications of flexible energy devices using traditional approaches. Nacre, the gold standard for biomimicry, provides an excellent example and guideline for assembling two-dimensional nanosheets into high-performance nanocomposites. This review summarizes recent research on the bioinspired graphene-based nanocomposites (BGBNs), and discusses different bioinspired assembly strategies for constructing integrated high-strength and -toughness graphene-based nanocomposites through various synergistic effects. Fundamental properties of graphene-based nanocomposites, such as strength, toughness, and electrical conductivities, are highlighted. Applications of the BGBNs in flexible energy devices, as well as potential challenges, are addressed. Inspired from the past work done by the community a roadmap for the future of the BGBNs in flexible energy device applications is depicted. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Experimental Performance of the NRL 8-Beam, 4-Cavity Multiple-Beam Klystron

NASA Astrophysics Data System (ADS)

Abe, D. K.; Pershing, D. E.; Nguyen, K. T.; Wood, F. N.; Myers, R. E.; Eisen, E. L.; Cusick, M.; Levush, B.

2006-01-01

Multiple-beam amplifiers (MBAs) represent a device technology with the potential to produce high-power, efficient amplifiers with relatively wide bandwidths that are compact, low-weight, low-noise, and operate at reduced voltages relative to comparable single-beam devices. To better understand the device physics and technical issues involved in the design, fabrication, and operation of these devices, the U.S. Naval Research Laboratory (NRL) has an on-going program to develop high peak power (> 600 kW) multiple-beam klystrons (MBKs) operating in S-band (˜3.3 GHz).

Fabrication and performance of pressure-sensing device consisting of electret film and organic semiconductor

NASA Astrophysics Data System (ADS)

Kodzasa, Takehito; Nobeshima, Daiki; Kuribara, Kazunori; Uemura, Sei; Yoshida, Manabu

2017-04-01

We propose a new concept of a pressure-sensitive device that consists of an organic electret film and an organic semiconductor. This device exhibits high sensitivity and selectivity against various types of pressure. The sensing mechanism of this device originates from a modulation of the electric conductivity of the organic semiconductor film induced by the interaction between the semiconductor film and the charged electret film placed face to face. It is expected that a complicated sensor array will be fabricated by using a roll-to-roll manufacturing system, because this device can be prepared by an all-printing and simple lamination process without high-level positional adjustment for printing processes. This also shows that this device with a simple structure is suitable for application to a highly flexible device array sheet for an Internet of Things (IoT) or wearable sensing system.

High-performance ternary blend polymer solar cells involving both energy transfer and hole relay processes.

PubMed

Lu, Luyao; Chen, Wei; Xu, Tao; Yu, Luping

2015-06-04

The integration of multiple materials with complementary absorptions into a single junction device is regarded as an efficient way to enhance the power conversion efficiency (PCE) of organic solar cells (OSCs). However, because of increased complexity with one more component, only limited high-performance ternary systems have been demonstrated previously. Here we report an efficient ternary blend OSC with a PCE of 9.2%. We show that the third component can reduce surface trap densities in the ternary blend. Detailed studies unravel that the improved performance results from synergistic effects of enlarged open circuit voltage, suppressed trap-assisted recombination, enhanced light absorption, increased hole extraction, efficient energy transfer and better morphology. The working mechanism and high device performance demonstrate new insights and design guidelines for high-performance ternary blend solar cells and suggest that ternary structure is a promising platform to boost the efficiency of OSCs.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors.

PubMed

Giusi, G; Giordano, O; Scandurra, G; Rapisarda, M; Calvi, S; Ciofi, C

2016-04-01

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz(1/2), while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giusi, G.; Giordano, O.; Scandurra, G.

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz{sup 1/2}, while DC performances are limited only bymore » the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.« less

Wafer-size free-standing single-crystalline graphene device arrays

NASA Astrophysics Data System (ADS)

Li, Peng; Jing, Gaoshan; Zhang, Bo; Sando, Shota; Cui, Tianhong

2014-08-01

We report an approach of wafer-scale addressable single-crystalline graphene (SCG) arrays growth by using pre-patterned seeds to control the nucleation. The growth mechanism and superb properties of SCG were studied. Large array of free-standing SCG devices were realized. Characterization of SCG as nano switches shows excellent performance with life time (>22 000 times) two orders longer than that of other graphene nano switches reported so far. This work not only shows the possibility of producing wafer-scale high quality SCG device arrays but also explores the superb performance of SCG as nano devices.

Performance of a capillary propellant management device with hydrazine

NASA Technical Reports Server (NTRS)

Tegart, J. R.

1979-01-01

The propellant management device that was successfully used in the Viking Orbiter spacecraft was selected for the main propulsion system of the Teleoperator Retrieval System (TRS). Due to differences in the missions and different propellants, the operation of this sheet metal vane device required reverification for the TRS application. An analytical investigation was performed considering the adverse acceleration environment and the high contract angle of the hydrazine propellant. Drop tower tests demonstrated that the device would provide propellant acquisition while the TRS was docked with Skylab, but its operation would have to be supplemented through propellant settling when free-flying.

Roll-to-roll fabrication of large scale and regular arrays of three-dimensional nanospikes for high efficiency and flexible photovoltaics

PubMed Central

Leung, Siu-Fung; Gu, Leilei; Zhang, Qianpeng; Tsui, Kwong-Hoi; Shieh, Jia-Min; Shen, Chang-Hong; Hsiao, Tzu-Hsuan; Hsu, Chin-Hung; Lu, Linfeng; Li, Dongdong; Lin, Qingfeng; Fan, Zhiyong

2014-01-01

Three-dimensional (3-D) nanostructures have demonstrated enticing potency to boost performance of photovoltaic devices primarily owning to the improved photon capturing capability. Nevertheless, cost-effective and scalable fabrication of regular 3-D nanostructures with decent robustness and flexibility still remains as a challenging task. Meanwhile, establishing rational design guidelines for 3-D nanostructured solar cells with the balanced electrical and optical performance are of paramount importance and in urgent need. Herein, regular arrays of 3-D nanospikes (NSPs) were fabricated on flexible aluminum foil with a roll-to-roll compatible process. The NSPs have precisely controlled geometry and periodicity which allow systematic investigation on geometry dependent optical and electrical performance of the devices with experiments and modeling. Intriguingly, it has been discovered that the efficiency of an amorphous-Si (a-Si) photovoltaic device fabricated on NSPs can be improved by 43%, as compared to its planar counterpart, in an optimal case. Furthermore, large scale flexible NSP solar cell devices have been fabricated and demonstrated. These results not only have shed light on the design rules of high performance nanostructured solar cells, but also demonstrated a highly practical process to fabricate efficient solar panels with 3-D nanostructures, thus may have immediate impact on thin film photovoltaic industry. PMID:24603964

Roll-to-roll fabrication of large scale and regular arrays of three-dimensional nanospikes for high efficiency and flexible photovoltaics.

PubMed

Leung, Siu-Fung; Gu, Leilei; Zhang, Qianpeng; Tsui, Kwong-Hoi; Shieh, Jia-Min; Shen, Chang-Hong; Hsiao, Tzu-Hsuan; Hsu, Chin-Hung; Lu, Linfeng; Li, Dongdong; Lin, Qingfeng; Fan, Zhiyong

2014-03-07

Three-dimensional (3-D) nanostructures have demonstrated enticing potency to boost performance of photovoltaic devices primarily owning to the improved photon capturing capability. Nevertheless, cost-effective and scalable fabrication of regular 3-D nanostructures with decent robustness and flexibility still remains as a challenging task. Meanwhile, establishing rational design guidelines for 3-D nanostructured solar cells with the balanced electrical and optical performance are of paramount importance and in urgent need. Herein, regular arrays of 3-D nanospikes (NSPs) were fabricated on flexible aluminum foil with a roll-to-roll compatible process. The NSPs have precisely controlled geometry and periodicity which allow systematic investigation on geometry dependent optical and electrical performance of the devices with experiments and modeling. Intriguingly, it has been discovered that the efficiency of an amorphous-Si (a-Si) photovoltaic device fabricated on NSPs can be improved by 43%, as compared to its planar counterpart, in an optimal case. Furthermore, large scale flexible NSP solar cell devices have been fabricated and demonstrated. These results not only have shed light on the design rules of high performance nanostructured solar cells, but also demonstrated a highly practical process to fabricate efficient solar panels with 3-D nanostructures, thus may have immediate impact on thin film photovoltaic industry.

Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays.

PubMed

Tex, David M; Nakamura, Tetsuya; Imaizumi, Mitsuru; Ohshima, Takeshi; Kanemitsu, Yoshihiko

2017-05-16

Tandem solar cells are suited for space applications due to their high performance, but also have to be designed in such a way to minimize influence of degradation by the high energy particle flux in space. The analysis of the subcell performance is crucial to understand the device physics and achieve optimized designs of tandem solar cells. Here, the radiation-induced damage of inverted grown InGaP/GaAs/InGaAs triple-junction solar cells for various electron fluences are characterized using conventional current-voltage (I-V) measurements and time-resolved photoluminescence (PL). The conversion efficiencies of the entire device before and after damage are measured with I-V curves and compared with the efficiencies predicted from the time-resolved method. Using the time-resolved data the change in the carrier dynamics in the subcells can be discussed. Our optical method allows to predict the absolute electrical conversion efficiency of the device with an accuracy of better than 5%. While both InGaP and GaAs subcells suffered from significant material degradation, the performance loss of the total device can be completely ascribed to the damage in the GaAs subcell. This points out the importance of high internal electric fields at the operating point.

Development of a High Efficiency Dry Powder Inhaler: Effects of Capsule Chamber Design and Inhaler Surface Modifications

PubMed Central

Behara, Srinivas R.B.; Farkas, Dale R.; Hindle, Michael; Longest, P. Worth

2013-01-01

Purpose The objective of this study was to explore the performance of a high efficiency dry powder inhaler (DPI) intended for excipient enhanced growth (EEG) aerosol delivery based on changes to the capsule orientation and surface modifications of the capsule and device. Methods DPIs were constructed by combining newly designed capsule chambers (CC) with a previously developed three-dimensional (3D) rod array for particle deagglomeration and a previously optimized EEG formulation. The new CCs oriented the capsule perpendicular to the incoming airflow and were analyzed for different air inlets at a constant pressure drop across the device. Modifications to the inhaler and capsule surfaces included use of metal dispersion rods and surface coatings. Aerosolization performance of the new DPIs was evaluated and compared with commercial devices. Results The proposed capsule orientation and motion pattern increased capsule vibrational frequency and reduced the aerosol MMAD compared with commercial/modified DPIs. The use of metal rods in the 3D array further improved inhaler performance. Coating the inhaler and capsule with PTFE significantly increased emitted dose (ED) from the optimized DPI. Conclusions High efficiency performance is achieved for EEG delivery with the optimized DPI device and formulation combination producing an aerosol with MMAD < 1.5 µm, FPF<5µm/ED > 90%, and ED > 80%. PMID:23949304

A high-performance channel engineered charge-plasma-based MOSFET with high-κ spacer

NASA Astrophysics Data System (ADS)

Shan, Chan; Wang, Ying; Luo, Xin; Bao, Meng-tian; Yu, Cheng-hao; Cao, Fei

2017-12-01

In this paper, the performance of graded channel double-gate MOSFET (GC-DGFET) that utilizes the charge-plasma concept and a high-κ spacer is investigated through 2-D device simulations. The results demonstrate that GC-DGFET with high-κ spacer can effectively improve the ON-state driving current (ION) and reduce the OFF-leakage current (IOFF). We find that reduction of the initial energy barrier between the source and channel is the origin of this ION enhancement. The reason for the IOFF reduction is identified to be the extension of the effective channel length owing to the fringing field via high-κ spacers. Consequently, these devices offer enhanced performance by reducing the total gate-to-gate capacitance (Cgg) and decreasing the intrinsic delay (τ).

Batch-fabricated high-performance graphene Hall elements

PubMed Central

Xu, Huilong; Zhang, Zhiyong; Shi, Runbo; Liu, Honggang; Wang, Zhenxing; Wang, Sheng; Peng, Lian-Mao

2013-01-01

Hall elements are by far the most widely used magnetic sensor. In general, the higher the mobility and the thinner the active region of the semiconductor used, the better the Hall device. While most common magnetic field sensors are Si-based Hall sensors, devices made from III-V compounds tend to favor over that based on Si. However these devices are more expensive and difficult to manufacture than Si, and hard to be integrated with signal-processing circuits for extending function and enforcing performance. In this article we show that graphene is intrinsically an ideal material for Hall elements which may harness the remarkable properties of graphene, i.e. extremely high carrier mobility and atomically thin active body, to create ideal magnetic sensors with high sensitivity, excellent linearity and remarkable thermal stability. PMID:23383375

Reliability Testing of NASA Piezocomposite Actuators

NASA Technical Reports Server (NTRS)

Wilkie, W.; High, J.; Bockman, J.

2002-01-01

NASA Langley Research Center has developed a low-cost piezocomposite actuator which has application for controlling vibrations in large inflatable smart space structures, space telescopes, and high performance aircraft. Tests show the NASA piezocomposite device is capable of producing large, directional, in-plane strains on the order of 2000 parts-per-million peak-to-peak, with no reduction in free-strain performance to 100 million electrical cycles. This paper describes methods, measurements, and preliminary results from our reliability evaluation of the device under externally applied mechanical loads and at various operational temperatures. Tests performed to date show no net reductions in actuation amplitude while the device was moderately loaded through 10 million electrical cycles. Tests were performed at both room temperature and at the maximum operational temperature of the epoxy resin system used in manufacture of the device. Initial indications are that actuator reliability is excellent, with no actuator failures or large net reduction in actuator performance.

An overview of silicon carbide device technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Matus, Lawrence G.

1992-01-01

Recent progress in the development of silicon carbide (SiC) as a semiconductor is briefly reviewed. This material shows great promise towards providing electronic devices that can operate under the high-temperature, high-radiation, and/or high-power conditions where current semiconductor technologies fail. High quality single crystal wafers have become available, and techniques for growing high quality epilayers have been refined to the point where experimental SiC devices and circuits can be developed. The prototype diodes and transistors that have been produced to date show encouraging characteristics, but by the same token they also exhibit some device-related problems that are not unlike those faced in the early days of silicon technology development. Although these problems will not prevent the implementation of some useful circuits, the performance and operating regime of SiC electronics will be limited until these device-related issues are solved.

High-throughput microfluidic single-cell digital polymerase chain reaction.

PubMed

White, A K; Heyries, K A; Doolin, C; Vaninsberghe, M; Hansen, C L

2013-08-06

Here we present an integrated microfluidic device for the high-throughput digital polymerase chain reaction (dPCR) analysis of single cells. This device allows for the parallel processing of single cells and executes all steps of analysis, including cell capture, washing, lysis, reverse transcription, and dPCR analysis. The cDNA from each single cell is distributed into a dedicated dPCR array consisting of 1020 chambers, each having a volume of 25 pL, using surface-tension-based sample partitioning. The high density of this dPCR format (118,900 chambers/cm(2)) allows the analysis of 200 single cells per run, for a total of 204,000 PCR reactions using a device footprint of 10 cm(2). Experiments using RNA dilutions show this device achieves shot-noise-limited performance in quantifying single molecules, with a dynamic range of 10(4). We performed over 1200 single-cell measurements, demonstrating the use of this platform in the absolute quantification of both high- and low-abundance mRNA transcripts, as well as micro-RNAs that are not easily measured using alternative hybridization methods. We further apply the specificity and sensitivity of single-cell dPCR to performing measurements of RNA editing events in single cells. High-throughput dPCR provides a new tool in the arsenal of single-cell analysis methods, with a unique combination of speed, precision, sensitivity, and specificity. We anticipate this approach will enable new studies where high-performance single-cell measurements are essential, including the analysis of transcriptional noise, allelic imbalance, and RNA processing.

Characterization of High-power Quasi-cw Laser Diode Arrays

NASA Technical Reports Server (NTRS)

Stephen, Mark A.; Vasilyev, Aleksey; Troupaki, Elisavet; Allan, Graham R.; Kashem, Nasir B.

2005-01-01

NASA s requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. Performance and comprehensive characterization data of Quasi-CW, High-power, laser diode arrays is presented.

A passive microfluidic hydrogen-air fuel cell with exceptional stability and high performance.

PubMed

Mitrovski, Svetlana M; Nuzzo, Ralph G

2006-03-01

We describe an advanced microfluidic hydrogen-air fuel cell (FC) that exhibits exceptional durability and high performance, most notably yielding stable output power (>100 days) without the use of an anode-cathode separator membrane. This FC embraces an entirely passive device architecture and, unlike conventional microfluidic designs that exploit laminar hydrodynamics, no external pumps are used to sustain or localize the reagent flow fields. The devices incorporate high surface area/porous metal and metal alloy electrodes that are embedded and fully immersed in liquid electrolyte confined in the channels of a poly(dimethylsiloxane) (PDMS)-based microfluidic network. The polymeric network also serves as a self-supporting membrane through which oxygen and hydrogen are supplied to the cathode and alloy anode, respectively, by permeation. The operational stability of the device and its performance is strongly dependent on the nature of the electrolyte used (5 M H2SO4 or 2.5 M NaOH) and composition of the anode material. The latter choice is optimized to decrease the sensitivity of the system to oxygen cross-over while still maintaining high activity towards the hydrogen oxidation reaction (HOR). Three types of high surface area anodes were tested in this work. These include: high-surface area electrodeposited Pt (Pt); high-surface area electrodeposited Pd (Pd); and thin palladium adlayers supported on a "porous" Pt electrode (Pd/Pt). The FCs display their best performance in 5 M H2SO4 using the Pd/Pt anode. This exceptional stability and performance was ascribed to several factors, namely: the high permeabilities of O2, H2, and CO2 in PDMS; the inhibition of the formation of insoluble carbonate species due to the presence of a highly acidic electrolyte; and the selectivity of the Pd/Pt anode toward the HOR. The stability of the device for long-term operation was modeled using a stack of three FCs as a power supply for a portable display that otherwise uses a 3 V battery.

A Bamboo-Inspired Nanostructure Design for Flexible, Foldable, and Twistable Energy Storage Devices.

PubMed

Sun, Yongming; Sills, Ryan B; Hu, Xianluo; Seh, Zhi Wei; Xiao, Xu; Xu, Henghui; Luo, Wei; Jin, Huanyu; Xin, Ying; Li, Tianqi; Zhang, Zhaoliang; Zhou, Jun; Cai, Wei; Huang, Yunhui; Cui, Yi

2015-06-10

Flexible energy storage devices are critical components for emerging flexible electronics. Electrode design is key in the development of all-solid-state supercapacitors with superior electrochemical performances and mechanical durability. Herein, we propose a bamboo-like graphitic carbon nanofiber with a well-balanced macro-, meso-, and microporosity, enabling excellent mechanical flexibility, foldability, and electrochemical performances. Our design is inspired by the structure of bamboos, where a periodic distribution of interior holes along the length and graded pore structure at the cross section not only enhance their stability under different mechanical deformation conditions but also provide a high surface area accessible to the electrolyte and low ion-transport resistance. The prepared nanofiber network electrode recovers its initial state easily after 3-folded manipulation. The mechanically robust membrane is explored as a free-standing electrode for a flexible all-solid-state supercapacitor. Without the need for extra support, the volumetric energy and power densities based on the whole device are greatly improved compared to the state-of-the-art devices. Even under continuous dynamic operations of forceful bending (90°) and twisting (180°), the as-designed device still exhibits stable electrochemical performances with 100% capacitance retention. Such a unique supercapacitor holds great promise for high-performance flexible electronics.

A bamboo-inspired nanostructure design for flexible foldable and twistable energy storage devices

DOE PAGES

Sun, Yongming; Sills, Ryan B; Hu, Xianluo; ...

2015-05-26

Flexible energy storage devices are critical components for emerging flexible electronics. Electrode design is key in the development of all-solid-state supercapacitors with superior electrochemical performances and mechanical durability. We propose a bamboo-like graphitic carbon nanofiber with a well-balanced macro-, meso-, and microporosity, enabling excellent mechanical flexibility, foldability, and electrochemical performances. Our design is inspired by the structure of bamboos, where a periodic distribution of interior holes along the length and graded pore structure at the cross section not only enhance their stability under different mechanical deformation conditions but also provide a high surface area accessible to the electrolyte and lowmore » ion-transport resistance. The prepared nanofiber network electrode recovers its initial state easily after 3-folded manipulation. The mechanically robust membrane is explored as a free-standing electrode for a flexible all-solid-state supercapacitor. Without the need for extra support, the volumetric energy and power densities based on the whole device are greatly improved compared to the state-of-the-art devices. Furthermore, even under continuous dynamic operations of forceful bending (90°) and twisting (180°), the as-designed device still exhibits stable electrochemical performances with 100% capacitance retention. As a result, such a unique supercapacitor holds great promise for high-performance flexible electronics.« less

Evaluation of performance, acceptance, and compliance of an auto-injector in healthy and rheumatoid arthritic subjects measured by a motion capture system.

PubMed

Xiao, Xiao; Li, Wei; Clawson, Corbin; Karvani, David; Sondag, Perceval; Hahn, James K

2018-01-01

The study aimed to develop a motion capture system that can track, visualize, and analyze the entire performance of self-injection with the auto-injector. Each of nine healthy subjects and 29 rheumatoid arthritic (RA) patients with different degrees of hand disability performed two simulated injections into an injection pad while six degrees of freedom (DOF) motions of the auto-injector and the injection pad were captured. We quantitatively measured the performance of the injection by calculating needle displacement from the motion trajectories. The max, mean, and SD of needle displacement were analyzed. Assessments of device acceptance and usability were evaluated by a survey questionnaire and independent observations of compliance with the device instruction for use (IFU). A total of 80 simulated injections were performed. Our results showed a similar level of performance among all the subjects with slightly larger, but not statistically significant, needle displacement in the RA group. In particular, no significant effects regarding previous experience in self-injection, grip method, pain in hand, and Cochin score in the RA group were found to have an impact on the mean needle displacement. Moreover, the analysis of needle displacement for different durations of injections indicated that most of the subjects reached their personal maximum displacement in 15 seconds and remained steady or exhibited a small amount of increase from 15 to 60 seconds. Device acceptance was high for most of the questions (ie, >4; >80%) based on a 0-5-point scale or percentage of acceptance. The overall compliance with the device IFU was high for the first injection (96.05%) and reached 98.02% for the second injection. We demonstrated the feasibility of tracking the motions of injection to measure the performance of simulated self-injection. The comparisons of needle displacement showed that even RA patients with severe hand disability could properly perform self-injection with this auto-injector at a similar level with the healthy subjects. Finally, the observed high device acceptance and compliance with device IFU suggest that the system is convenient and easy to use.

Detection of H5 and H7 highly pathogenic avian influenza virus with lateral flow devices: performance with healthy, sick and dead chickens

USDA-ARS?s Scientific Manuscript database

Rapid detection of highly pathogenic avian influenza virus (HPAIV) in the field is critical for effective disease control and to differentiate it from other diseases, such as Newcastle disease. Lateral flow devices (LFD) are commercially available and provide a fast, highly specific, on-site test fo...

Image quality degradation by light-scattering processes in high-performance display devices for medical imaging

NASA Astrophysics Data System (ADS)

Badano, Aldo

1999-11-01

This thesis addresses the characterization of light scattering processes that degrade image quality in high performance electronic display devices for digital radiography. Using novel experimental and computational tools, we study the lateral diffusion of light in emissive display devices that causes extensive veiling glare and significant reduction of the physical contrast. In addition, we examine the deleterious effects of ambient light reflections that affect the contrast of low luminance regions, and superimpose unwanted structured signal. The analysis begins by introducing the performance limitations of the human visual system to define high fidelity requirements. It is noted that current devices severely suffer from image quality degradation due to optical transport processes. To model the veiling glare and reflectance characteristics of display devices, we introduce a Monte Carlo light transport simulation code, DETECT-II, that tracks individual photons through multiple scattering events. The simulation accounts for the photon polarization state at each scattering event, and provides descriptions for rough surfaces and thin film coatings. A new experimental method to measure veiling glare is described next, based on a conic collimated probe that minimizes contamination from bright areas. The measured veiling glare ratio is taken to be the luminance in the surrounding bright field divided by the luminance in the dark circle. We show that veiling glare ratios in the order of a few hundreds can be measured with an uncertainty of a few percent. The veiling glare response function is obtained by measuring the small spot contrast ratio of test patterns having varying dark spot radius. Using DETECT-II, we then estimate the ring response functions for a high performance medical imaging monitor of current design, and compare the predictions of the model with the experimentally measured response function. The data presented in this thesis demonstrate that although absorption in the faceplate of high performance monochrome cathode-ray tube monitors have reduced glare, a black matrix design is needed for high fidelity applications. For a high performance medical imaging monitor with anti-reflective coating, the glare ratio for a 1 cm diameter dark spot was measured to be 240. Finally, we introduce experimental techniques for measurements of specular and diffuse display reflectance, and we compare measured reflection coefficients with Monte Carlo estimates. A specular reflection coefficient of 0.0012, and a diffuse coefficient of 0.005 nits/lux are required to minimize degradation from ambient light in rooms with 100 lux illumination. In spite of having comparable reflection coefficients, the low maximum luminance of current devices worsens the effect of ambient light reflections when compared to radiographic film. Flat panel technologies with optimized designs can perform even better than film due to a thin faceplate, increased light absorption, and high brightness.

Separating light absorption layer from channel in ZnO vertical nanorod arrays based photodetectors for high-performance image sensors

NASA Astrophysics Data System (ADS)

Ma, Yang; Wu, Congjun; Xu, Zhihao; Wang, Fei; Wang, Min

2018-05-01

Photoconductor arrays with both high responsivity and large ON/OFF ratios are of great importance for the application of image sensors. Herein, a ZnO vertical nanorod array based photoconductor with a light absorption layer separated from the device channel has been designed, in which the photo-generated carriers along the axial ZnO nanorods drive to the external electrodes through nanorod-nanorod junctions in the dense layer at the bottom. This design allows us to enhance the photocurrent with unchanged dark current by increasing the ratio between the ZnO nanorod length and the thickness of the dense layer to achieve both high responsivity and large ON/OFF ratios. As a result, the as-fabricated devices possess a high responsivity of 1.3 × 105 A/W, a high ON/OFF ratio of 790, a high detectivity of 1.3 × 1013 Jones, and a low detectable light intensity of 1 μW/cm2. More importantly, the developed approach enables the integration of ZnO vertical nanorod array based photodetectors as image sensors with uniform device-to-device performance.

High-frequency output characteristics of AlGaAs/GaAs heterojunction bipolar transistors for large-signal applications

NASA Astrophysics Data System (ADS)

Chen, J.; Gao, G. B.; Ünlü, M. S.; Morkoç, H.

1991-11-01

High-frequency ic- vce output characteristics of bipolar transistors, derived from calculated device cutoff frequencies, are reported. The generation of high-frequency output characteristics from device design specifications represents a novel bridge between microwave circuit design and device design: the microwave performance of simulated device structures can be analyzed, or tailored transistor device structures can be designed to fit specific circuit applications. The details of our compact transistor model are presented, highlighting the high-current base-widening (Kirk) effect. The derivation of the output characteristics from the modeled cutoff frequencies are then presented, and the computed characteristics of an AlGaAs/GaAs heterojunction bipolar transistor operating at 10 GHz are analyzed. Applying the derived output characteristics to microwave circuit design, we examine large-signal class A and class B amplification.

Diamond X-ray Photodiode for White and Monochromatic SR beams

PubMed Central

Keister, Jeffrey W.; Smedley, John; Muller, Erik M.; Bohon, Jen; Héroux, Annie

2011-01-01

High purity, single crystal CVD diamond plates are screened for quality and instrumented into a sensor assembly for quantitative characterization of flux and position sensitivity. Initial investigations have yielded encouraging results and have led to further development. Several limiting complications are observed and discussed, as well as mitigations thereof. For example, diamond quality requirements for x-ray diodes include low nitrogen impurity and crystallographic defectivity. Thin electrode windows and electronic readout performance are ultimately also critical to device performance. Promising features observed so far from prototype devices include calculable responsivity, flux linearity, position sensitivity and timing performance. Recent results from testing in high flux and high speed applications are described. PMID:21822344

Interplay between Interfacial Structures and Device Performance in Organic Solar Cells: A Case Study with the Low Work Function Metal, Calcium.

PubMed

Ju, Huanxin; Knesting, Kristina M; Zhang, Wei; Pan, Xiao; Wang, Chia-Hsin; Yang, Yaw-Wen; Ginger, David S; Zhu, Junfa

2016-01-27

A better understanding of how interfacial structure affects charge carrier recombination would benefit the development of highly efficient organic photovoltaic (OPV) devices. In this paper, transient photovoltage (TPV) and charge extraction (CE) measurements are used in combination with synchrotron radiation photoemission spectroscopy (SRPES) to gain insight into the correlation between interfacial properties and device performance. OPV devices based on PCDTBT/PC71BM with a Ca interlayer were studied as a reference system to investigate the interfacial effects on device performance. Devices with a Ca interlayer exhibit a lower recombination than devices with only an Al cathode at a given charge carrier density (n). In addition, the interfacial band structures indicate that the strong dipole moment produced by the Ca interlayer can facilitate the extraction of electrons and drive holes away from the cathode/polymer interface, resulting in beneficial reduction in interfacial recombination losses. These results help explain the higher efficiencies of devices made with Ca interlayers compared to that without the Ca interlayer.

Advances in Perovskite Solar Cells

PubMed Central

Zuo, Chuantian; Bolink, Henk J.; Han, Hongwei; Huang, Jinsong

2016-01-01

Organolead halide perovskite materials possess a combination of remarkable optoelectronic properties, such as steep optical absorption edge and high absorption coefficients, long charge carrier diffusion lengths and lifetimes. Taken together with the ability for low temperature preparation, also from solution, perovskite‐based devices, especially photovoltaic (PV) cells have been studied intensively, with remarkable progress in performance, over the past few years. The combination of high efficiency, low cost and additional (non‐PV) applications provides great potential for commercialization. Performance and applications of perovskite solar cells often correlate with their device structures. Many innovative device structures were developed, aiming at large‐scale fabrication, reducing fabrication cost, enhancing the power conversion efficiency and thus broadening potential future applications. This review summarizes typical structures of perovskite solar cells and comments on novel device structures. The applications of perovskite solar cells are discussed. PMID:27812475

Design and performance study of a DC-DC flyback converter based on wide bandgap power devices for photovoltaic applications

NASA Astrophysics Data System (ADS)

Alharbi, Salah S.; Alharbi, Saleh S.; Al-bayati, Ali M. S.; Matin, Mohammad

2017-08-01

This paper presents a high-performance dc-dc flyback converter design based on wide bandgap (WBG) semiconductor devices for photovoltaic (PV) applications. Two different power devices, a gallium nitride (GaN)-transistor and a silicon (Si)-MOSFET, are implemented individually in the flyback converter to examine their impact on converter performance. The total power loss of the converter with different power devices is analyzed for various switching frequencies. Converter efficiency is evaluated at different switching frequencies, input voltages, and output power levels. The results reveal that the converter with the GaN-transistor has lower total power loss and better efficiency compared to the converter with the conventional Si-MOSFET.

Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials.

PubMed

Wang, Feng; Wang, Zhenxing; Jiang, Chao; Yin, Lei; Cheng, Ruiqing; Zhan, Xueying; Xu, Kai; Wang, Fengmei; Zhang, Yu; He, Jun

2017-09-01

2D layered semiconducting materials (2DLSMs) represent the thinnest semiconductors, holding many novel properties, such as the absence of surface dangling bonds, sizable band gaps, high flexibility, and ability of artificial assembly. With the prospect of bringing revolutionary opportunities for electronic and optoelectronic applications, 2DLSMs have prospered over the past twelve years. From materials preparation and property exploration to device applications, 2DLSMs have been extensively investigated and have achieved great progress. However, there are still great challenges for high-performance devices. In this review, we provide a brief overview on the recent breakthroughs in device optimization based on 2DLSMs, particularly focussing on three aspects: device configurations, basic properties of channel materials, and heterostructures. The effects from device configurations, i.e., electrical contacts, dielectric layers, channel length, and substrates, are discussed. After that, the affect of the basic properties of 2DLSMs on device performance is summarized, including crystal defects, crystal symmetry, doping, and thickness. Finally, we focus on heterostructures based on 2DLSMs. Through this review, we try to provide a guide to improve electronic and optoelectronic devices of 2DLSMs for achieving practical device applications in the future. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multipositional silica-coated silver nanoparticles for high-performance polymer solar cells.

PubMed

Choi, Hyosung; Lee, Jung-Pil; Ko, Seo-Jin; Jung, Jae-Woo; Park, Hyungmin; Yoo, Seungmin; Park, Okji; Jeong, Jong-Ryul; Park, Soojin; Kim, Jin Young

2013-05-08

We demonstrate high-performance polymer solar cells using the plasmonic effect of multipositional silica-coated silver nanoparticles. The location of the nanoparticles is critical for increasing light absorption and scattering via enhanced electric field distribution. The device incorporating nanoparticles between the hole transport layer and the active layer achieves a power conversion efficiency of 8.92% with an external quantum efficiency of 81.5%. These device efficiencies are the highest values reported to date for plasmonic polymer solar cells using metal nanoparticles.

Pseudomorphic Narrow Gap Materials for High Performance Devices

DTIC Science & Technology

1993-04-14

research under this program is ito obtain hiigh quality pseudomorphic (strained) narrow gap materials for high performance device applicatjons During...1993 ELECTE """ ’I ~01lG:9395 APR21 W93 Dr. Max N. Yoder Scientific Officer, Code 114SS Office of Naval Research 800 N. Quincy Street Arlington, VA...Mr. V. Morano - w/cy each/ ...- Administrative Grants Officer Office of Naval Research . r. - Resident Representative, N6Z9g7 -- _ z 33 Third Avenue

High-speed and low-energy nitride memristors

DOE PAGES

Choi, Byung Joon; Torrezan, Antonio C.; Strachan, John Paul; ...

2016-05-24

High-performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (≈85 ps for microdevices with waveguide) and relatively low switching current (≈15 μA for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al-rich conduction channel through the AlN layer is revealed. Here, the motion of positively charged nitrogen vacancies is likely responsible for the observed switching.

Flexible and High Performance Supercapacitors Based on NiCo2O4for Wide Temperature Range Applications

NASA Astrophysics Data System (ADS)

Gupta, Ram K.; Candler, John; Palchoudhury, Soubantika; Ramasamy, Karthik; Gupta, Bipin Kumar

2015-10-01

Binder free nanostructured NiCo2O4 were grown using a facile hydrothermal technique. X-ray diffraction patterns confirmed the phase purity of NiCo2O4. The surface morphology and microstructure of the NiCo2O4 analyzed by scanning electron microscopy (SEM) showed flower-like morphology composed of needle-like structures. The potential application of binder free NiCo2O4 as an electrode for supercapacitor devices was investigated using electrochemical methods. The cyclic voltammograms of NiCo2O4 electrode using alkaline aqueous electrolytes showed the presence of redox peaks suggesting pseudocapacitance behavior. Quasi-solid state supercapacitor device fabricated by sandwiching two NiCo2O4 electrodes and separating them by ion transporting layer. The performance of the device was tested using cyclic voltammetry, galvanostatic charge-discharge and electrochemical impedance spectroscopy. The device showed excellent flexibility and cyclic stability. The temperature dependent charge storage capacity was measured for their variable temperature applications. Specific capacitance of the device was enhanced by ~150% on raising the temperature from 20 to 60 °C. Hence, the results suggest that NiCo2O4 grown under these conditions could be a suitable material for high performance supercapacitor devices that can be operated at variable temperatures.

Flexible and High Performance Supercapacitors Based on NiCo2O4for Wide Temperature Range Applications.

PubMed

Gupta, Ram K; Candler, John; Palchoudhury, Soubantika; Ramasamy, Karthik; Gupta, Bipin Kumar

2015-10-20

Binder free nanostructured NiCo2O4 were grown using a facile hydrothermal technique. X-ray diffraction patterns confirmed the phase purity of NiCo2O4. The surface morphology and microstructure of the NiCo2O4 analyzed by scanning electron microscopy (SEM) showed flower-like morphology composed of needle-like structures. The potential application of binder free NiCo2O4 as an electrode for supercapacitor devices was investigated using electrochemical methods. The cyclic voltammograms of NiCo2O4 electrode using alkaline aqueous electrolytes showed the presence of redox peaks suggesting pseudocapacitance behavior. Quasi-solid state supercapacitor device fabricated by sandwiching two NiCo2O4 electrodes and separating them by ion transporting layer. The performance of the device was tested using cyclic voltammetry, galvanostatic charge-discharge and electrochemical impedance spectroscopy. The device showed excellent flexibility and cyclic stability. The temperature dependent charge storage capacity was measured for their variable temperature applications. Specific capacitance of the device was enhanced by ~150% on raising the temperature from 20 to 60 °C. Hence, the results suggest that NiCo2O4 grown under these conditions could be a suitable material for high performance supercapacitor devices that can be operated at variable temperatures.

Flexible and High Performance Supercapacitors Based on NiCo2O4for Wide Temperature Range Applications

PubMed Central

Gupta, Ram K.; Candler, John; Palchoudhury, Soubantika; Ramasamy, Karthik; Gupta, Bipin Kumar

2015-01-01

Binder free nanostructured NiCo2O4 were grown using a facile hydrothermal technique. X-ray diffraction patterns confirmed the phase purity of NiCo2O4. The surface morphology and microstructure of the NiCo2O4 analyzed by scanning electron microscopy (SEM) showed flower-like morphology composed of needle-like structures. The potential application of binder free NiCo2O4 as an electrode for supercapacitor devices was investigated using electrochemical methods. The cyclic voltammograms of NiCo2O4 electrode using alkaline aqueous electrolytes showed the presence of redox peaks suggesting pseudocapacitance behavior. Quasi-solid state supercapacitor device fabricated by sandwiching two NiCo2O4 electrodes and separating them by ion transporting layer. The performance of the device was tested using cyclic voltammetry, galvanostatic charge-discharge and electrochemical impedance spectroscopy. The device showed excellent flexibility and cyclic stability. The temperature dependent charge storage capacity was measured for their variable temperature applications. Specific capacitance of the device was enhanced by ~150% on raising the temperature from 20 to 60 °C. Hence, the results suggest that NiCo2O4 grown under these conditions could be a suitable material for high performance supercapacitor devices that can be operated at variable temperatures. PMID:26482921

A miniature Hopkinson experiment device based on multistage reluctance coil electromagnetic launch.

PubMed

Huang, Wenkai; Huan, Shi; Xiao, Ying

2017-09-01

A set of seven-stage reluctance miniaturized Hopkinson bar electromagnetic launcher has been developed in this paper. With the characteristics of high precision, small size, and little noise pollution, the device complies with the requirements of miniaturized Hopkinson bar for high strain rate. The launcher is a seven-stage accelerating device up to 65.5 m/s. A high performance microcontroller is used to control accurately the discharge of capacitor sets, by means of which the outlet velocity of the projectile can be controlled within a certain velocity range.

A miniature Hopkinson experiment device based on multistage reluctance coil electromagnetic launch

NASA Astrophysics Data System (ADS)

Huang, Wenkai; Huan, Shi; Xiao, Ying

2017-09-01

A set of seven-stage reluctance miniaturized Hopkinson bar electromagnetic launcher has been developed in this paper. With the characteristics of high precision, small size, and little noise pollution, the device complies with the requirements of miniaturized Hopkinson bar for high strain rate. The launcher is a seven-stage accelerating device up to 65.5 m/s. A high performance microcontroller is used to control accurately the discharge of capacitor sets, by means of which the outlet velocity of the projectile can be controlled within a certain velocity range.

Inkjet 3D printing of UV and thermal cure silicone elastomers for dielectric elastomer actuators

NASA Astrophysics Data System (ADS)

McCoul, David; Rosset, Samuel; Schlatter, Samuel; Shea, Herbert

2017-12-01

Dielectric elastomer actuators (DEAs) are an attractive form of electromechanical transducer, possessing high energy densities, an efficient design, mechanical compliance, high speed, and noiseless operation. They have been incorporated into a wide variety of devices, such as microfluidic systems, cell bioreactors, tunable optics, haptic displays, and actuators for soft robotics. Fabrication of DEA devices is complex, and the majority are inefficiently made by hand. 3D printing offers an automated and flexible manufacturing alternative that can fabricate complex, multi-material, integrated devices consistently and in high resolution. We present a novel additive manufacturing approach to DEA devices in which five commercially available, thermal and UV-cure DEA silicone rubber materials have been 3D printed with a drop-on-demand, piezoelectric inkjet system. Using this process, 3D structures and high-quality silicone dielectric elastomer membranes as thin as 2 μm have been printed that exhibit mechanical and actuation performance at least as good as conventionally blade-cast membranes. Printed silicone membranes exhibited maximum tensile strains of up to 727%, and DEAs with printed silicone dielectrics were actuated up to 6.1% area strain at a breakdown strength of 84 V μm-1 and also up to 130 V μm-1 at 2.4% strain. This approach holds great potential to manufacture reliable, high-performance DEA devices with high throughput.

Efficient and mechanically robust stretchable organic light-emitting devices by a laser-programmable buckling process

PubMed Central

Yin, Da; Feng, Jing; Ma, Rui; Liu, Yue-Feng; Zhang, Yong-Lai; Zhang, Xu-Lin; Bi, Yan-Gang; Chen, Qi-Dai; Sun, Hong-Bo

2016-01-01

Stretchable organic light-emitting devices are becoming increasingly important in the fast-growing fields of wearable displays, biomedical devices and health-monitoring technology. Although highly stretchable devices have been demonstrated, their luminous efficiency and mechanical stability remain impractical for the purposes of real-life applications. This is due to significant challenges arising from the high strain-induced limitations on the structure design of the device, the materials used and the difficulty of controlling the stretch-release process. Here we have developed a laser-programmable buckling process to overcome these obstacles and realize a highly stretchable organic light-emitting diode with unprecedented efficiency and mechanical robustness. The strained device luminous efficiency −70 cd A−1 under 70% strain - is the largest to date and the device can accommodate 100% strain while exhibiting only small fluctuations in performance over 15,000 stretch-release cycles. This work paves the way towards fully stretchable organic light-emitting diodes that can be used in wearable electronic devices. PMID:27187936

A Self-Validation Method for High-Temperature Thermocouples Under Oxidizing Atmospheres

NASA Astrophysics Data System (ADS)

Mokdad, S.; Failleau, G.; Deuzé, T.; Briaudeau, S.; Kozlova, O.; Sadli, M.

2015-08-01

Thermocouples are prone to significant drift in use particularly when they are exposed to high temperatures. Indeed, high-temperature exposure can affect the response of a thermocouple progressively by changing the structure of the thermoelements and inducing inhomogeneities. Moreover, an oxidizing atmosphere contributes to thermocouple drift by changing the chemical nature of the metallic wires by the effect of oxidation. In general, severe uncontrolled drift of thermocouples results from these combined influences. A periodic recalibration of the thermocouple can be performed, but sometimes it is not possible to remove the sensor out of the process. Self-validation methods for thermocouples provide a solution to avoid this drawback, but there are currently no high-temperature contact thermometers with self-validation capability at temperatures up to . LNE-Cnam has developed fixed-point devices integrated to the thermocouples consisting of machined alumina-based devices for operation under oxidizing atmospheres. These devices require small amounts of pure metals (typically less than 2 g). They are suitable for self-validation of high-temperature thermocouples up to . In this paper the construction and the characterization of these integrated fixed-point devices are described. The phase-transition plateaus of gold, nickel, and palladium, which enable coverage of the temperature range between and , are assessed with this self-validation technique. Results of measurements performed at LNE-Cnam with the integrated self-validation module at several levels of temperature will be presented. The performance of the devices are assessed and discussed, in terms of robustness and metrological characteristics. Uncertainty budgets are also proposed and detailed.

Boosting Two-Dimensional MoS2/CsPbBr3 Photodetectors via Enhanced Light Absorbance and Interfacial Carrier Separation.

PubMed

Song, Xiufeng; Liu, Xuhai; Yu, Dejian; Huo, Chengxue; Ji, Jianping; Li, Xiaoming; Zhang, Shengli; Zou, Yousheng; Zhu, Gangyi; Wang, Yongjin; Wu, Mingzai; Xie, An; Zeng, Haibo

2018-01-24

Transition metal dichalcogenides (TMDs) are promising candidates for flexible optoelectronic devices because of their special structures and excellent properties, but the low optical absorption of the ultrathin layers greatly limits the generation of photocarriers and restricts the performance. Here, we integrate all-inorganic perovskite CsPbBr 3 nanosheets with MoS 2 atomic layers and take the advantage of the large absorption coefficient and high quantum efficiency of the perovskites, to achieve excellent performance of the TMD-based photodetectors. Significantly, the interfacial charge transfer from the CsPbBr 3 to the MoS 2 layer has been evidenced by the observed photoluminescence quenching and shortened decay time of the hybrid MoS 2 /CsPbBr 3 . Resultantly, such a hybrid MoS 2 /CsPbBr 3 photodetector exhibits a high photoresponsivity of 4.4 A/W, an external quantum efficiency of 302%, and a detectivity of 2.5 × 10 10 Jones because of the high efficient photoexcited carrier separation at the interface of MoS 2 and CsPbBr 3 . The photoresponsivity of this hybrid device presents an improvement of 3 orders of magnitude compared with that of a MoS 2 device without CsPbBr 3 . The response time of the device is also shortened from 65.2 to 0.72 ms after coupling with MoS 2 layers. The combination of the all-inorganic perovskite layer with high photon absorption and the carrier transport TMD layer may pave the way for novel high-performance optoelectronic devices.

Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s.

PubMed

Smith, Casey; Qaisi, Ramy; Liu, Zhihong; Yu, Qingkai; Hussain, Muhammad Mustafa

2013-07-23

Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11,000 cm(2)/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low tox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance.

Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide.

PubMed

Min Lee, Seung; Hwan Yum, Jung; Larsen, Eric S; Chul Lee, Woo; Keun Kim, Seong; Bielawski, Christopher W; Oh, Jungwoo

2017-10-16

Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire technology are primarily used in high-performance radio frequency (RF) and radiation sensitive applications as well as for reducing the short channel effects in microelectronic devices. Despite their advantages, the high substrate cost and overheating problems associated with complexities in substrate fabrication as well as the low thermal conductivity of silicon oxide prevent broad applications of this technology. To overcome these challenges, we describe a new approach of using beryllium oxide (BeO). The use of atomic layer deposition (ALD) for producing this material results in lowering the SOI wafer production cost. Furthermore, the use of BeO exhibiting a high thermal conductivity might minimize the self-heating issues. We show that crystalline Si can be grown on ALD BeO and the resultant devices exhibit potential for use in advanced SOI technology applications.

Opportunity of spinel ferrite materials in nonvolatile memory device applications based on their resistive switching performances.

PubMed

Hu, Wei; Qin, Ni; Wu, Guangheng; Lin, Yanting; Li, Shuwei; Bao, Dinghua

2012-09-12

The opportunity of spinel ferrites in nonvolatile memory device applications has been demonstrated by the resistive switching performance characteristics of a Pt/NiFe(2)O(4)/Pt structure, such as low operating voltage, high device yield, long retention time (up to 10(5) s), and good endurance (up to 2.2 × 10(4) cycles). The dominant conduction mechanisms are Ohmic conduction in the low-resistance state and in the lower-voltage region of the high-resistance state and Schottky emission in the higher-voltage region of the high-resistance state. On the basis of measurements of the temperature dependence of the resistances and magnetic properties in different resistance states, we explain the physical mechanism of resistive switching of Pt/NiFe(2)O(4)/Pt devices using the model of formation and rupture of conducting filaments by considering the thermal effect of oxygen vacancies and changes in the valences of cations due to the redox effect.

Simply modified indium tin oxides by ultrathin aluminum and sodium chloride composite interlayer for high performance inverted polymer solar cells

NASA Astrophysics Data System (ADS)

Zheng, Shuang; Wu, Zhenxuan; Zhang, Chuan; Liu, Huan; Yan, Minnan; Su, Xiaodan; Wang, Jin; Zhang, Hongmei; Ma, Dongge

2017-07-01

We report the fabrication of high performance inverted polymer solar cells with simply modified indium tin oxide (ITO) by an ultrathin aluminum (Al) and sodium chloride (NaCl) composite layer. The device efficiency and stability were both improved. The optimized device with poly(3-hexylthiophene) as the donor and [6,6]-phenyl-C61-butyric acid methylester as the acceptor under AM 1.5 (100 mw cm-2) radiation achieved a high power conversion efficiency of 3.88% with an open-circuit voltage of 0.60 V and a fill factor of 0.61, which is significantly higher than those of the inverted devices with only Al or NaCl as modification interlayer, respectively. Moreover, the stability is enhanced by about 70% more than that of the conventional device. The significant enhancement is attributed to the reduced work function of ITO electrode from 4.75 to 3.90 eV by modification as well as the improvement of the electrode interface.

Reproducible Growth of High-Quality Cubic-SiC Layers

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Powell, J. Anthony

2004-01-01

Semiconductor electronic devices and circuits based on silicon carbide (SiC) are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which devices made from conventional semiconductors cannot adequately perform. The ability of SiC-based devices to function under such extreme conditions is expected to enable significant improvements in a variety of applications and systems. These include greatly improved high-voltage switching for saving energy in public electric power distribution and electric motor drives; more powerful microwave electronic circuits for radar and communications; and sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

A Novel Type of Battery-Supercapacitor Hybrid Device with Highly Switchable Dual Performances Based on a Carbon Skeleton/Mg2Ni Free-Standing Hydrogen Storage Electrode.

PubMed

Li, Na; Du, Yi; Feng, Qing-Ping; Huang, Gui-Wen; Xiao, Hong-Mei; Fu, Shao-Yun

2017-12-27

The sharp proliferation of high power electronics and electrical vehicles has promoted growing demands for power sources with both high energy and power densities. Under these circumstances, battery-supercapacitor hybrid devices are attracting considerable attention as they combine the advantages of both batteries and supercapacitors. Here, a novel type of hybrid device based on a carbon skeleton/Mg 2 Ni free-standing electrode without the traditional nickel foam current collector is reported, which has been designed and fabricated through a dispersing-freeze-drying method by employing reduced graphene oxide (rGO) and multiwalled carbon nanotubes (MWCNTs) as a hybrid skeleton. As a result, the Mg 2 Ni alloy is able to deliver a high discharge capacity of 644 mAh g -1 and, more importantly, a high cycling stability with a retention of over 78% after 50 charge/discharge cycles have been achieved, which exceeds almost all the results ever reported on the Mg 2 Ni alloy. Simultaneously, the electrode could also exhibit excellent supercapacitor performances including high specific capacities (296 F g -1 ) and outstanding cycling stability (100% retention after 100 cycles). Moreover, the hybrid device can switch between battery and supercapacitor modes immediately as needed during application. These features make the C skeleton/alloy electrode a highly promising candidate for battery-supercapacitor hybrid devices with high power/energy density and favorable cycling stability.

High-performance transistors for bioelectronics through tuning of channel thickness

PubMed Central

Rivnay, Jonathan; Leleux, Pierre; Ferro, Marc; Sessolo, Michele; Williamson, Adam; Koutsouras, Dimitrios A.; Khodagholy, Dion; Ramuz, Marc; Strakosas, Xenofon; Owens, Roisin M.; Benar, Christian; Badier, Jean-Michel; Bernard, Christophe; Malliaras, George G.

2015-01-01

Despite recent interest in organic electrochemical transistors (OECTs), sparked by their straightforward fabrication and high performance, the fundamental mechanism behind their operation remains largely unexplored. OECTs use an electrolyte in direct contact with a polymer channel as part of their device structure. Hence, they offer facile integration with biological milieux and are currently used as amplifying transducers for bioelectronics. Ion exchange between electrolyte and channel is believed to take place in OECTs, although the extent of this process and its impact on device characteristics are still unknown. We show that the uptake of ions from an electrolyte into a film of poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT:PSS) leads to a purely volumetric capacitance of 39 F/cm3. This results in a dependence of the transconductance on channel thickness, a new degree of freedom that we exploit to demonstrate high-quality recordings of human brain rhythms. Our results bring to the forefront a transistor class in which performance can be tuned independently of device footprint and provide guidelines for the design of materials that will lead to state-of-the-art transistor performance. PMID:26601178

Vacuum-integrated electrospray deposition for highly reliable polymer thin film.

PubMed

Park, Soohyung; Lee, Younjoo; Yi, Yeonjin

2012-10-01

Vacuum electrospray deposition (ESD) equipment was designed to prepare polymer thin films. The polymer solution can be injected directly into vacuum system through multi-stage pumping line, so that the solvent residues and ambient contaminants are highly reduced. To test the performance of ESD system, we fabricated organic photovoltaic cells (OPVCs) by injecting polymer solution directly onto the substrate inside a high vacuum chamber. The OPVC fabricated has the structure of Al∕P3HT:PCBM∕PEDOT:PSS∕ITO and was optimized by varying the speed of solution injection and concentration of the solution. The power conversion efficiency (PCE) of the optimized OPVC is 3.14% under AM 1.5G irradiation without any buffer layer at the cathode side. To test the advantages of the vacuum ESD, we exposed the device to atmosphere between the deposition steps of the active layer and cathode. This showed that the PCE of the vacuum processed device is 24% higher than that of the air exposed device and confirms the advantages of the vacuum prepared polymer film for high performance devices.

Printable Fabrication of Nanocoral-Structured Electrodes for High-Performance Flexible and Planar Supercapacitor with Artistic Design.

PubMed

Lin, Yuanjing; Gao, Yuan; Fan, Zhiyong

2017-11-01

Planar supercapacitors with high flexibility, desirable operation safety, and high performance are considered as attractive candidates to serve as energy-storage devices for portable and wearable electronics. Here, a scalable and printable technique is adopted to construct novel and unique hierarchical nanocoral structures as the interdigitated electrodes on flexible substrates. The as-fabricated flexible all-solid-state planar supercapacitors with nanocoral structures achieve areal capacitance up to 52.9 mF cm -2 , which is 2.5 times that of devices without nanocoral structures, and this figure-of-merit is among the highest in the literature for the same category of devices. More interestingly, due to utilization of the inkjet-printing technique, excellent versatility on electrode-pattern artistic design is achieved. Particularly, working supercapacitors with artistically designed patterns are demonstrated. Meanwhile, the high scalability of such a printable method is also demonstrated by fabrication of large-sized artistic supercapacitors serving as energy-storage devices in a wearable self-powered system as a proof of concept. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-Throughput, Motility-Based Sorter for Microswimmers such as C. elegans

PubMed Central

Yuan, Jinzhou; Zhou, Jessie; Raizen, David M.; Bau, Haim H.

2015-01-01

Animal motility varies with genotype, disease, aging, and environmental conditions. In many studies, it is desirable to carry out high throughput motility-based sorting to isolate rare animals for, among other things, forward genetic screens to identify genetic pathways that regulate phenotypes of interest. Many commonly used screening processes are labor-intensive, lack sensitivity, and require extensive investigator training. Here, we describe a sensitive, high throughput, automated, motility-based method for sorting nematodes. Our method is implemented in a simple microfluidic device capable of sorting thousands of animals per hour per module, and is amenable to parallelism. The device successfully enriches for known C. elegans motility mutants. Furthermore, using this device, we isolate low-abundance mutants capable of suppressing the somnogenic effects of the flp-13 gene, which regulates C. elegans sleep. By performing genetic complementation tests, we demonstrate that our motility-based sorting device efficiently isolates mutants for the same gene identified by tedious visual inspection of behavior on an agar surface. Therefore, our motility-based sorter is capable of performing high throughput gene discovery approaches to investigate fundamental biological processes. PMID:26008643

High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals.

PubMed

Varghese, Tony; Hollar, Courtney; Richardson, Joseph; Kempf, Nicholas; Han, Chao; Gamarachchi, Pasindu; Estrada, David; Mehta, Rutvik J; Zhang, Yanliang

2016-09-12

Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstrate a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm(2) with 60 °C temperature difference between the hot side and cold side. The highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications.

High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varghese, Tony; Hollar, Courtney; Richardson, Joseph

Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstratemore » a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm 2 with 60°C temperature difference between the hot side and cold side. In conclusion, the highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications.« less

High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals

DOE PAGES

Varghese, Tony; Hollar, Courtney; Richardson, Joseph; ...

2016-09-12

Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstratemore » a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm 2 with 60°C temperature difference between the hot side and cold side. In conclusion, the highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications.« less

High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals

PubMed Central

Varghese, Tony; Hollar, Courtney; Richardson, Joseph; Kempf, Nicholas; Han, Chao; Gamarachchi, Pasindu; Estrada, David; Mehta, Rutvik J.; Zhang, Yanliang

2016-01-01

Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstrate a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm2 with 60 °C temperature difference between the hot side and cold side. The highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications. PMID:27615036

Organic mixed conductors for bioelectronic applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Rivnay, Jonathan

2016-09-01

Direct measurement and stimulation of electrophysiological activity is a staple of neural and cardiac health monitoring, diagnosis and/or therapy. The ability to sensitively detect these signals can be enhanced by organic electronic materials that show mixed conduction properties (both electronic and ionic transport) in order to bridge the inherent mismatch that is prevalent between biological systems and traditional microelectronic materials/devices. Organic electrochemical transistors (OECTs) are one class of devices that utilize organic mixed conductors as the transistor channel, and have shown considerable promise as amplifying transducers due to their stability in aqueous conditions and high transconductance. These devices are fabricated in flexible, conformable form factors for in vivo recordings of epileptic activity, and for cutaneous EEG and ECG recordings in human subjects. The majority of high performance devices are based on conducting polymers such as poly(3,4-ethylenedioxythiophene) :poly(styrenesulfonate), PEDOT:PSS. By investigating PEDOT-based materials and devices, we are able to construct design rules for new formulations/materials. Introducing glycolated side chains to carefully selected semiconducting polymer backbones has enabled a new class high performance bioelectronic materials that feature high volumetric capacitance, transconductance >10mS (device dimensions ca. 10um), and steep subthreshold switching characteristics. A sub-set of these materials outperform PEDOT:PSS and shows significant promise for low power in vitro and in vivo biosensing applications.

Performance analysis of InGaAs/GaAsP heterojunction double gate tunnel field effect transistor

NASA Astrophysics Data System (ADS)

Ahish, S.; Sharma, Dheeraj; Vasantha, M. H.; Kumar, Y. B. N.

2017-03-01

In this paper, analog/RF performance of InGaAs/GaAsP heterojunction double gate tunnel field effect transistor (HJTFET) has been explored. A highly doped n+ layer is placed at the Source-Channel junction in order to improve the horizontal electric field component and thus, improve the realiability of the device. The analog performance of the device is analysed by extracting current-voltage characteristics, transcondutance (gm), gate-to-drain capacitance (Cgd) and gate-to-source capacitance (Cgs). Further, RF performance of the device is evaluated by obtaining cut-off frequency (fT) and Gain Bandwidth (GBW) product. ION /IOFF ratio equal to ≈ 109, subthreshold slope of 27 mV/dec, maximum fT of 2.1 THz and maximum GBW of 484 GHz were achieved. Also, the impact of temperature variation on the linearity performance of the device has been investigated. Furthermore, the circuit level performance of the device is performed by implementing a Common Source (CS) amplifier; maximum gain of 31.11 dB and 3-dB cut-off frequency equal to 91.2 GHz were achieved for load resistance (RL) = 17.5 KΩ.

Effects of ionizing radiation on charge-coupled imagers

NASA Technical Reports Server (NTRS)

Killiany, J. M.; Baker, W. D.; Saks, N. S.; Barbe, D. F.

1975-01-01

The effects of ionizing radiation on three different charge coupled imagers have been investigated. Device performance was evaluated as a function of total gamma ray dose. The principal failure mechanisms have been identified for each particular device structure. The clock and bias voltages required for high total dose operation of the devices are presented.

Photoemission-based microelectronic devices

PubMed Central

Forati, Ebrahim; Dill, Tyler J.; Tao, Andrea R.; Sievenpiper, Dan

2016-01-01

The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and electron velocity. Replacing the semiconductor channel in conventional microelectronic devices with a gas or vacuum channel may scale their speed, wavelength and power beyond what is available today. However, liberating electrons into gas/vacuum in a practical microelectronic device is quite challenging. It often requires heating, applying high voltages, or using lasers with short wavelengths or high powers. Here, we show that the interaction between an engineered resonant surface and a low-power infrared laser can cause enough photoemission via electron tunnelling to implement feasible microelectronic devices such as transistors, switches and modulators. The proposed photoemission-based devices benefit from the advantages of gas-plasma/vacuum electronic devices while preserving the integrability of semiconductor-based devices. PMID:27811946

Estimation of exciton reverse transfer for variable spectra and high efficiency in interlayer-based organic light-emitting devices

NASA Astrophysics Data System (ADS)

Liu, Shengqiang; Zhao, Juan; Huang, Jiang; Yu, Junsheng

2016-12-01

Organic light-emitting devices (OLEDs) with three different exciton adjusting interlayers (EALs), which are inserted between two complementary blue and yellow emitting layers, are fabricated to demonstrate the relationship between the EAL and device performance. The results show that the variations of type and thickness of EAL have different adjusting capability and distribution control on excitons. However, we also find that the reverse Dexter transfer of triplet exciton from the light-emitting layer to the EAL is an energy loss path, which detrimentally affects electroluminescent (EL) spectral performance and device efficiency in different EAL-based devices. Based on exciton distribution and integration, an estimation of exciton reverse transfer is developed through a triplet energy level barrier to simulate the exciton behavior. Meanwhile, the estimation results also demonstrate the relationship between the EAL and device efficiency by a parameter of exciton reverse transfer probability. The estimation of exciton reverse transfer discloses a crucial role of the EALs in the interlayer-based OLEDs to achieve variable EL spectra and high efficiency.

The high frequency light load fatigue testing machine based on giant magnetostrictive material and stroke multiplier

NASA Astrophysics Data System (ADS)

Wang, M. D.; Li, D. S.; Huang, Y.; Zhang, C.; Zhong, K. M.; Sun, L. N.

2013-08-01

In the notebook and clamshell mobile phone, data communication wire often requires repeated bending. Generally, communication wire with the actual application conditions, the test data cannot assess bending resistance performance of data communication wire is tested conventionally using wires with weights of 90 degree to test bending number, this test method and device is not fully reflect the fatigue performance in high frequency and light load application condition, at the same time it has a large difference between the test data of the long-term reliability of high frequency and low load conditions. In this paper, high frequency light load fatigue testing machine based on the giant magnetostrictive material and stroke multiplier is put forward, in which internal reflux stroke multiplier is driven by giant magnetostrictive material to realize the rapid movement of light load. This fatigue testing device has the following advantages: (1) When the load is far less than the friction, reducing friction is very effective to improve the device performance. Because the body is symmetrical, the friction loss of radial does not exist in theory, so the stress situation of mechanism is good with high transmission efficiency and long service life. (2) The installation position of the output hydraulic cylinder, can be arranged conveniently as ordinary cylinder. (3) Reciprocating frequency, displacement and speed of high frequency movement can be programmed easily to change with higher position precision. (4)Hydraulic oil in this device is closed to transmit, which does not produce any environment pollution. The device has no hydraulic pump and tank, and less energy conversion processes, so it is with the trend of green manufacturing.

Self-Consistent Monte Carlo Study of the Coulomb Interaction under Nano-Scale Device Structures

NASA Astrophysics Data System (ADS)

Sano, Nobuyuki

2011-03-01

It has been pointed that the Coulomb interaction between the electrons is expected to be of crucial importance to predict reliable device characteristics. In particular, the device performance is greatly degraded due to the plasmon excitation represented by dynamical potential fluctuations in high-doped source and drain regions by the channel electrons. We employ the self-consistent 3D Monte Carlo (MC) simulations, which could reproduce both the correct mobility under various electron concentrations and the collective plasma waves, to study the physical impact of dynamical potential fluctuations on device performance under the Double-gate MOSFETs. The average force experienced by an electron due to the Coulomb interaction inside the device is evaluated by performing the self-consistent MC simulations and the fixed-potential MC simulations without the Coulomb interaction. Also, the band-tailing associated with the local potential fluctuations in high-doped source region is quantitatively evaluated and it is found that the band-tailing becomes strongly dependent of position in real space even inside the uniform source region. This work was partially supported by Grants-in-Aid for Scientific Research B (No. 2160160) from the Ministry of Education, Culture, Sports, Science and Technology in Japan.

Performance analysis of resistive switching devices based on BaTiO3 thin films

NASA Astrophysics Data System (ADS)

Samardzic, Natasa; Kojic, Tijana; Vukmirovic, Jelena; Tripkovic, Djordjije; Bajac, Branimir; Srdic, Vladimir; Stojanovic, Goran

2016-03-01

Resitive switching devices, memristors, have recenty attracted much attention due to promising performances and potential applications in the field of logic and memory devices. Here, we present thin film BaTiO3 based memristor fabricated using ink-jet printing technique. Active material is a single layer barium titanate film with thickness of ̴100 nm, sandwitched between metal electodes. Printing parameters were optimized aiming to achieve stable drop flow and uniform printed layer. Current-voltage characteristics show typical memristive behavior with pinched hysteresis loop crossed at the origin, with marked differences between High Resistive State (HRS) and Low Resistive State (LRS). Obtained resistive states are stable during numerous switching processes. The device also shows unipolar switching effect for negative voltage impulses. Variable voltage impulse amplitudes leads to the shifting of the energy levels of electode contacts resulting in changing of the overall current through the device. Structural charcterization have been performed using XRD analysis and SEM micrography. High-temperature current-voltage measurements combined with transport parameter analysis using Hall efect measurement system (HMS 3000) and Impedance Analyzer AC measurements allows deeper insigth into conduction mechanism of ferroelectric memristors.

Highly conductive transparent organic electrodes with multilayer structures for rigid and flexible optoelectronics.

PubMed

Guo, Xiaoyang; Liu, Xingyuan; Lin, Fengyuan; Li, Hailing; Fan, Yi; Zhang, Nan

2015-05-27

Transparent electrodes are essential components for optoelectronic devices, such as touch panels, organic light-emitting diodes, and solar cells. Indium tin oxide (ITO) is widely used as transparent electrode in optoelectronic devices. ITO has high transparency and low resistance but contains expensive rare elements, and ITO-based devices have poor mechanical flexibility. Therefore, alternative transparent electrodes with excellent opto-electrical performance and mechanical flexibility will be greatly demanded. Here, organics are introduced into dielectric-metal-dielectric structures to construct the transparent electrodes on rigid and flexible substrates. We show that organic-metal-organic (OMO) electrodes have excellent opto-electrical properties (sheet resistance of below 10 Ω sq(-1) at 85% transmission), mechanical flexibility, thermal and environmental stabilities. The OMO-based polymer photovoltaic cells show performance comparable to that of devices based on ITO electrodes. This OMO multilayer structure can therefore be used to produce transparent electrodes suitable for use in a wide range of optoelectronic devices.

Epitaxial Growth of Thin Ferroelectric Polymer Films on Graphene Layer for Fully Transparent and Flexible Nonvolatile Memory.

PubMed

Kim, Kang Lib; Lee, Wonho; Hwang, Sun Kak; Joo, Se Hun; Cho, Suk Man; Song, Giyoung; Cho, Sung Hwan; Jeong, Beomjin; Hwang, Ihn; Ahn, Jong-Hyun; Yu, Young-Jun; Shin, Tae Joo; Kwak, Sang Kyu; Kang, Seok Ju; Park, Cheolmin

2016-01-13

Enhancing the device performance of organic memory devices while providing high optical transparency and mechanical flexibility requires an optimized combination of functional materials and smart device architecture design. However, it remains a great challenge to realize fully functional transparent and mechanically durable nonvolatile memory because of the limitations of conventional rigid, opaque metal electrodes. Here, we demonstrate ferroelectric nonvolatile memory devices that use graphene electrodes as the epitaxial growth substrate for crystalline poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) polymer. The strong crystallographic interaction between PVDF-TrFE and graphene results in the orientation of the crystals with distinct symmetry, which is favorable for polarization switching upon the electric field. The epitaxial growth of PVDF-TrFE on a graphene layer thus provides excellent ferroelectric performance with high remnant polarization in metal/ferroelectric polymer/metal devices. Furthermore, a fully transparent and flexible array of ferroelectric field effect transistors was successfully realized by adopting transparent poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] semiconducting polymer.

Dual Transition Edge Sensor Bolometer for Enhanced Dynamic Range

NASA Technical Reports Server (NTRS)

Chervenak, J. A.; Benford, D. J.; Moseley, S. H.; Irwin, K. D.

2004-01-01

Broadband surveys at the millimeter and submillimeter wavelengths will require bolometers that can reach new limits of sensitivity and also operate under high background conditions. To address this need, we present results on a dual transition edge sensor (TES) device with two operating modes: one for low background, ultrasensitive detection and one for high background, enhanced dynamic range detection. The device consists of a detector element with two transition temperatures (T(sub c)) of 0.25 and 0.51 K located on the same micromachined, thermally isolated membrane structure. It can be biased on either transition, and features phonon-limited noise performance at the lower T(sub c). We measure noise performance on the lower transition 7 x 10(exp -18) W/rt(Hz) and the bias power on the upper transition of 12.5 pW, giving a factor of 10 enhancement of the dynamic range for the device. We discuss the biasable range of this type of device and present a design concept to optimize utility of the device.

Effect of Back Contact and Rapid Thermal Processing Conditions on Flexible CdTe Device Performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahabaduge, Hasitha; Meysing, D. M.; Rance, Will L.

Flexible CdTe solar cells on ultra-thin glass substrates can enable new applications that require high specific power, unique form-factors, and low manufacturing costs. To be successful, these cells must be cost competitive, have high efficiency, and have high reliability. Here we present back contact processing conditions that enabled us to achieve over 16% efficiency on flexible Corning (R) Willow (R) Glass substrates. We used co-evaporated ZnTe:Cu and Au as our back contact and used rapid thermal processing (RTP) to activate the back contact. Both the ZnTe to Cu ratio and the RTP activation temperature provide independent control over the devicemore » performance. We have investigated the influence of various RTP conditions to Cu activation and distribution. Current density-voltage, capacitance-voltage measurements along with device simulations were used to examine the device performance in terms of ZnTe to Cu ratio and rapid thermal activation temperature.« less

All 2D materials as electrodes for high power hybrid energy storage applications

NASA Astrophysics Data System (ADS)

Kato, Keiko; Sayed, Farheen N.; Babu, Ganguli; Ajayan, Pulickel M.

2018-04-01

Achieving both high energy and power densities from energy storage devices is a core strategy to meet the increasing demands of high performance portable electronics and electric transportation systems. Li-ion capacitor is a promising hybrid technology that strategically exploits high energy density from a Li-ion battery electrode and high power density from a supercapacitor electrode. However, the performance and safety of hybrid devices are still major concerns due to the use of graphite anodes which form passivation layers with organic electrolytes at lower potentials. Here, we explore 2D nanosheets as both anode and cathode electrodes to build a high power system without compromising energy density. Owing to the high electrical conductivity and multivalent redox activity at higher potentials, the Li-ion intercalation electrode is capable of maintaining large energy density at higher current rates with less safety risk than conventional systems. Hybrid devices consisting of all in all 2D electrodes deliver energy density as high as 121 Wh g-1 (at 240 W kg-1) and retains 29 Wh g-1 at high power density of 3600 W kg-1.

ZnO Quantum Dot Decorated Zn2SnO4 Nanowire Heterojunction Photodetectors with Drastic Performance Enhancement and Flexible Ultraviolet Image Sensors.

PubMed

Li, Ludong; Gu, Leilei; Lou, Zheng; Fan, Zhiyong; Shen, Guozhen

2017-04-25

Here we report the fabrication of high-performance ultraviolet photodetectors based on a heterojunction device structure in which ZnO quantum dots were used to decorate Zn 2 SnO 4 nanowires. Systematic investigations have shown their ultrahigh light-to-dark current ratio (up to 6.8 × 10 4 ), specific detectivity (up to 9.0 × 10 17 Jones), photoconductive gain (up to 1.1 × 10 7 ), fast response, and excellent stability. Compared with a pristine Zn 2 SnO 4 nanowire, a quantum dot decorated nanowire demonstrated about 10 times higher photocurrent and responsivity. Device physics modeling showed that their high performance originates from the rational energy band engineering, which allows efficient separation of electron-hole pairs at the interfaces between ZnO quantum dots and a Zn 2 SnO 4 nanowire. As a result of band engineering, holes migrate to ZnO quantum dots, which increases electron concentration and lifetime in the nanowire conduction channel, leading to significantly improved photoresponse. The enhancement mechanism found in this work can also be used to guide the design of high-performance photodetectors based on other nanomaterials. Furthermore, flexible ultraviolet photodetectors were fabricated and integrated into a 10 × 10 device array, which constitutes a high-performance flexible ultraviolet image sensor. These intriguing results suggest that the band alignment engineering on nanowires can be rationally achieved using compound semiconductor quantum dots. This can lead to largely improved device performance. Particularly for ZnO quantum dot decorated Zn 2 SnO 4 nanowires, these decorated nanowires may find broad applications in future flexible and wearable electronics.

Liquid crystal materials and tunable devices for optical communications

NASA Astrophysics Data System (ADS)

Du, Fang

In this dissertation, liquid crystal materials and devices are investigated in meeting the challenges for photonics and communications applications. The first part deals with polymer-stabilized liquid crystal (PSLC) materials and devices. Three polymer-stabilized liquid crystal systems are developed for optical communications. The second part reports the experimental investigation of a novel liquid-crystal-infiltrated photonic crystal fiber (PCF) and explores its applications in fiber-optic communications. The curing temperature is found to have significant effects on the PSLC performance. The electro-optic properties of nematic polymer network liquid crystal (PNLC) at different curing temperatures are investigated experimentally. At high curing temperature, a high contrast, low drive voltage, and small hysteresis PNLC is obtained as a result of the formed large LC microdomains. With the help of curing temperature effect, it is able to develop PNLC based optical devices with highly desirable performances for optical communications. Such high performance is generally considered difficult to realize for a PNLC. In fact, the poor performance of PNLC, especially at long wavelengths, has hindered it from practical applications for optical communications for a long time. Therefore, the optimal curing temperature effect discovered in this thesis would enable PSLCs for practical industrial applications. Further more, high birefringence LCs play an important role for near infrared photonic devices. The isothiocyanato tolane liquid crystals exhibit a high birefringence and low viscosity. The high birefringence LC dramatically improves the PSLC contrast ratio while keeping a low drive voltage and fast response time. A free-space optical device by PNLC is experimentally demonstrated and its properties characterized. Most LC devices are polarization sensitive. To overcome this drawback, we have investigated the polymer-stabilized cholesteric LC (PSCLC). Combining the curing temperature effect and high birefringence LC, a polarization independent fiber-optical device is realized with over 30 dB attenuation, ˜12 V rms drive voltage and 11/28 milliseconds (rise/decay) response times. A polymer-stabilized twisted nematic LC (PS TNLC) is also proposed as a variable optical attenuator for optical communications. By using the polarization control system, the device is polarization independent. The polymer network in a PS TNLC not only results in a fast response time (0.9/9 milliseconds for rise/decay respectively), but also removes the backflow effect of TNLC which occurs in the high voltage regime. Another major achievement in this thesis is the first demonstration of an electrically tunable LC-infiltrated photonic crystal fiber (PCF). Two different LC PCF configurations are studied. For the first time, electrically tunable LC PCFs are demonstrated experimentally. The guiding mechanism and polarization properties are studied. Preliminary experimental results are also given for the thermo-optical properties of a LC filled air-core PCF. In conclusion, this dissertation has solved important issues related to PSLC and enables its applications as VOAs and light shutters in optical communications. Through experimental investigations of the LC filled PCFs, a new possibility of developing tunable micro-sized fiber devices is opened for optical communications as well.

Semiconducting carbon nanotube network thin-film transistors with enhanced inkjet-printed source and drain contact interfaces

NASA Astrophysics Data System (ADS)

Lee, Yongwoo; Yoon, Jinsu; Choi, Bongsik; Lee, Heesung; Park, Jinhee; Jeon, Minsu; Han, Jungmin; Lee, Jieun; Kim, Yeamin; Kim, Dae Hwan; Kim, Dong Myong; Choi, Sung-Jin

2017-10-01

Carbon nanotubes (CNTs) are emerging materials for semiconducting channels in high-performance thin-film transistor (TFT) technology. However, there are concerns regarding the contact resistance (Rcontact) in CNT-TFTs, which limits the ultimate performance, especially the CNT-TFTs with the inkjet-printed source/drain (S/D) electrodes. Thus, the contact interfaces comprising the overlap between CNTs and metal S/D electrodes play a particularly dominant role in determining the performances and degree of variability in the CNT-TFTs with inkjet-printed S/D electrodes. In this work, the CNT-TFTs with improved device performance are demonstrated to enhance contact interfaces by controlling the CNT density at the network channel and underneath the inkjet-printed S/D electrodes during the formation of a CNT network channel. The origin of the improved device performance was systematically investigated by extracting Rcontact in the CNT-TFTs with the enhanced contact interfaces by depositing a high density of CNTs underneath the S/D electrodes, resulting in a 59% reduction in Rcontact; hence, the key performance metrics were correspondingly improved without sacrificing any other device metrics.

An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer

NASA Astrophysics Data System (ADS)

Shealy, J. R.; Kaper, V.; Tilak, V.; Prunty, T.; Smart, J. A.; Green, B.; Eastman, L. F.

2002-04-01

The AlGaN/GaN high-electron-mobility transistor requires a thermally conducting, semi-insulating substrate to achieve the best possible microwave performance. The semi-insulating SiC substrate is currently the best choice for this device technology; however, fringing fields which penetrate the GaN buffer layer at pinch-off introduce significant substrate conduction at modest drain bias if channel electrons are not well confined to the nitride structure. The addition of an insulating AlN sub-buffer on the semi-insulating SiC substrate suppresses this parasitic conduction, which results in dramatic improvements in the AlGaN/GaN transistor performance. A pronounced reduction in both the gate-lag and the gate-leakage current are observed for structures with the AlN sub-buffer layer. These structures operate up to 50 V drain bias under drive, corresponding to a peak voltage of 80 V, for a 0.30 µm gate length device. The devices have achieved high-efficiency operation at 10 GHz (>70% power-added efficiency in class AB mode at 15 V drain bias) and the highest output power density observed thus far (11.2 W mm-1). Large-periphery devices (1.5 mm gate width) deliver 10 W (continuous wave) of maximum saturated output power at 10 GHz. The growth, processing, and performance of these devices are briefly reviewed.

One-to-One Mobile Technology in High School Physics Classrooms: Understanding Its Use and Outcome

ERIC Educational Resources Information Center

Zhai, Xiaoming; Zhang, Meilan; Li, Min

2018-01-01

This study examined ways in which high school students used mobile devices in physics classrooms and after school, and the impact of in-class and after-school mobile technology use on their physics learning performance and interest. We collected data from 803 high school freshmen in China after they had used mobile devices for over five months. A…

Restorative effect of oxygen annealing on device performance in HfIZO thin-film transistors

NASA Astrophysics Data System (ADS)

Ha, Tae-Jun

2015-03-01

Metal-oxide based thin-film transistors (oxide-TFTs) are very promising for use in next generation electronics such as transparent displays requiring high switching and driving performance. In this study, we demonstrate an optimized process to secure excellent device performance with a favorable shift of the threshold voltage toward 0V in amorphous hafnium-indium-zinc-oxide (a-HfIZO) TFTs by using post-treatment with oxygen annealing. This enhancement results from the improved interfacial characteristics between gate dielectric and semiconductor layers due to the reduction in the density of interfacial states related to oxygen vacancies afforded by oxygen annealing. The device statistics confirm the improvement in the device-to-device and run-to-run uniformity. We also report on the photo-induced stability in such oxide-TFTs against long-term UV irradiation, which is significant for transparent displays.

An acoustic charge transport imager for high definition television applications

NASA Technical Reports Server (NTRS)

Hunt, William D.; Brennan, Kevin F.; Summers, Christopher J.

1993-01-01

This report covers: (1) invention of a new, ultra-low noise, low operating voltage APD which is expected to offer far better performance than the existing volume doped APD device; (2) performance of a comprehensive series of experiments on the acoustic and piezoelectric properties of ZnO films sputtered on GaAs which can possibly lead to a decrease in the required rf drive power for ACT devices by 15dB; (3) development of an advanced, hydrodynamic, macroscopic simulator used for evaluating the performance of ACT and CTD devices and aiding in the development of the next generation of devices; (4) experimental development of CTD devices which utilize a p-doped top barrier demonstrating charge storage capacity and low leakage currents; (5) refinements in materials growth techniques and in situ controls to lower surface defect densities to record levels as well as increase material uniformity and quality.

Performance Evaluation of an Automotive-Grade, High Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature Range

NASA Technical Reports Server (NTRS)

Boomer, Kristen; Hammoud, Ahmad

2015-01-01

Silicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

CdS-Nanowires Flexible Photo-detector with Ag-Nanowires Electrode Based on Non-transfer Process

PubMed Central

Pei, Yanli; Pei, Ruihan; Liang, Xiaoci; Wang, Yuhao; Liu, Ling; Chen, Haibiao; Liang, Jun

2016-01-01

In this study, UV-visible flexible resistivity-type photo-detectors were demonstrated with CdS-nanowires (NWs) percolation network channel and Ag-NWs percolation network electrode. The devices were fabricated on Mixed Cellulose Esters (MCE) membrane using a lithographic filtration method combined with a facile non-transfer process. The photo-detectors demonstrated strong adhesion, fast response time, fast decay time, and high photo sensitivity. The high performance could be attributed to the high quality single crystalline CdS-NWs, encapsulation of NWs in MCE matrix and excellent interconnection of the NWs. Furthermore, the sensing performance was maintained even the device was bent at an angle of 90°. This research may pave the way for the facile fabrication of flexible photo-detectors with high performances. PMID:26899726

Galvanic displacement assembly of ultrathin Co3O4 nanosheet arrays on nickel foam for a high-performance supercapacitor

NASA Astrophysics Data System (ADS)

You, Yuxiu; Zheng, Maojun; Ma, Liguo; Yuan, Xiaoliang; Zhang, Bin; Li, Qiang; Wang, Faze; Song, Jingnan; Jiang, Dongkai; Liu, Pengjie; Ma, Li; Shen, Wenzhong

2017-03-01

High-performance supercapacitors are very desirable for many portable electronic devices, electric vehicles and high-power electronic devices. Herein, a facile and binder-free synthesis method, galvanic displacement of the precursor followed by heat treatment, is used to fabricate ultrathin Co3O4 nanosheet arrays on nickel foam substrate. When used as a supercapacitor electrode the prepared Co3O4 on nickel foam exhibits a maximum specific capacitance of 1095 F g-1 at a current density of 1 A g-1 and good cycling stability of 71% retention after 2000 cycling tests. This excellent electrochemical performance can be ascribed to the high specific surface area of each Co3O4 nanosheet that comprises numerous nanoparticles.

Water/alcohol soluble conjugated polymers as highly efficient electron transporting/injection layer in optoelectronic devices.

PubMed

Huang, Fei; Wu, Hongbin; Cao, Yong

2010-07-01

Water/alcohol soluble conjugated polymers (WSCPs) can be processed from water or other polar solvents, which offer good opportunities to avoid interfacial mixing upon fabrication of multilayer polymer optoelectronic devices by solution processing, and can dramatically improve charge injection from high work-function metal cathode resulting in greatly enhancement of the device performance. In this critical review, the authors provide a brief review of recent developments in this field, including the materials design, functional principles, and their unique applications as interface modification layer in solution-processable multilayer optoelectronic devices (135 references).

Note: Motor-piezoelectricity coupling driven high temperature fatigue device

NASA Astrophysics Data System (ADS)

Ma, Z. C.; Du, X. J.; Zhao, H. W.; Ma, X. X.; Jiang, D. Y.; Liu, Y.; Ren, L. Q.

2018-01-01

The design and performance evaluation of a novel high temperature fatigue device simultaneously driven by servo motor and piezoelectric actuator is our focus. The device integrates monotonic and cyclic loading functions with a maximum tensile load of 1800 N, driving frequency of 50 Hz, alternating load of 95 N, and maximum service temperature of 1200 °C. Multimodal fatigue tests with arbitrary combinations of static and dynamic loads are achieved. At temperatures that range from RT to 1100 °C, the tensile and tensile-fatigue coupling mechanical behaviors of UM Co50 alloys are investigated to verify the feasibility of the device.

Coupled modeling of the competitive gettering of transition metals and impact on performance of lifetime sensitive devices

NASA Astrophysics Data System (ADS)

Yazdani, Armin; Chen, Renyu; Dunham, Scott T.

2017-03-01

This work models competitive gettering of metals (Cu, Ni, Fe, Mo, and W) by boron, phosphorus, and dislocation loops, and connects those results directly to device performance. Density functional theory calculations were first performed to determine the binding energies of metals to the gettering sites, and based on that, continuum models were developed to model the redistribution and trapping of the metals. Our models found that Fe is most strongly trapped by the dislocation loops while Cu and Ni are most strongly trapped by the P4V clusters formed in high phosphorus concentrations. In addition, it is found that none of the mentioned gettering sites are effective in gettering Mo and W. The calculated metal redistribution along with the associated capture cross sections and trap energy levels are passed to device simulation via the recombination models to calculate carrier lifetime and the resulting device performance. Thereby, a comprehensive and predictive TCAD framework is developed to optimize the processing conditions to maximize performance of lifetime sensitive devices.

3D direct writing fabrication of electrodes for electrochemical storage devices

NASA Astrophysics Data System (ADS)

Wei, Min; Zhang, Feng; Wang, Wei; Alexandridis, Paschalis; Zhou, Chi; Wu, Gang

2017-06-01

Among different printing techniques, direct ink writing is commonly used to fabricate 3D battery and supercapacitor electrodes. The major advantages of using the direct ink writing include effectively building 3D structure for energy storage devices and providing higher power density and higher energy density than traditional techniques due to the increased surface area of electrode. Nevertheless, direct ink writing has high standards for the printing inks, which requires high viscosity, high yield stress under shear and compression, and well-controlled viscoelasticity. Recently, a number of 3D-printed energy storage devices have been reported, and it is very important to understand the printing process and the ink preparation process for further material design and technology development. We discussed current progress of direct ink writing technologies by using various electrode materials including carbon nanotube-based material, graphene-based material, LTO (Li4Ti5O12), LFP (LiFePO4), LiMn1-xFexPO4, and Zn-based metallic oxide. Based on achieve electrochemical performance, these 3D-printed devices deliver performance comparable to the energy storage device fabricated using traditional methods still leaving large room for further improvement. Finally, perspectives are provided on the potential future direction of 3D printing for all solid-state electrochemical energy storage devices.

Cobalt-Doped Nickel Phosphite for High Performance of Electrochemical Energy Storage.

PubMed

Li, Bing; Shi, Yuxin; Huang, Kesheng; Zhao, Mingming; Qiu, Jiaqing; Xue, Huaiguo; Pang, Huan

2018-03-01

Compared to single metallic Ni or Co phosphides, bimetallic Ni-Co phosphides own ameliorative properties, such as high electrical conductivity, remarkable rate capability, upper specific capacity, and excellent cycle performance. Here, a simple one-step solvothermal process is proposed for the synthesis of bouquet-like cobalt-doped nickel phosphite (Ni 11 (HPO 3 ) 8 (OH) 6 ), and the effect of the structure on the pseudocapacitive performance is investigated via a series of electrochemical measurements. It is found that when the cobalt content is low, the glycol/deionized water ratio is 1, and the reaction is under 200 °C for 20 h, the morphology of the sample is uniform and has the highest specific surface area. The cobalt-doped Ni 11 (HPO 3 ) 8 (OH) 6 electrode presents a maximum specific capacitance of 714.8 F g -1 . More significantly, aqueous and solid-state flexible electrochemical energy storage devices are successfully assembled. The aqueous device shows a high energy density of 15.48 mWh cm -2 at the power density of 0.6 KW cm -2 . The solid-state device shows a high energy density of 14.72 mWh cm -2 at the power density of 0.6 KW cm -2 . These excellent performances confirm that the cobalt-doped Ni 11 (HPO 3 ) 8 (OH) 6 are promising materials for applications in electrochemical energy storage devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-Performance Near-Infrared Photodetectors Based on p-type SnX (X=S, Se) Nanowires Grown via Chemical Vapor Deposition.

PubMed

Zheng, Dingshan; Fang, Hehai; Long, Mingsheng; Wu, Feng; Wang, Peng; Gong, Fan; Wu, Xing; Ho, Johnny C; Liao, Lei; Hu, Weida

2018-06-21

Because of the distinct electronic properties and strong interaction with light, quasi-one-dimensional nanowires (NWs) with semiconducting property have been demonstrated with tremendous potential for various technological applications, especially electronics and optoelectronics. However, until now, most of the state-of-the-art NW photodetectors are predominantly based on the N-type NW channel. Here, we successfully synthesized P-type SnSe and SnS NWs via chemical vapor deposition method and fabricated high-performance single SnSe and SnS NW photodetectors. Importantly, these two NW devices exhibit the impressive photodetection performance with the high photoconductive gain of 1.5 × 10 4 (2.8 × 10 4 ), good responsivity of 1.0× 10 4 A W -1 (1.6× 10 4 A W -1 ) as well as excellent detectivity of 3.3 × 10 12 Jones (2.4 × 10 12 Jones) under near-infrared illumination at a bias of 3 V for the SnSe NW (SnS NW) channel. The rise and fall times can be as efficient as 460 and 520 μs (1.2 and 15.1 ms), respectively, for the SnSe NW (SnS NW) device. Moreover, the spatially resolved photocurrent mapping of the devices further reveals the bias-dependent photocurrent generation. All these results evidently demonstrate that the P-type SnSe and SnS NWs have great potential to be applied in next-generation high-performance optoelectronic devices.

QR-on-a-chip: a computer-recognizable micro-pattern engraved microfluidic device for high-throughput image acquisition.

PubMed

Yun, Kyungwon; Lee, Hyunjae; Bang, Hyunwoo; Jeon, Noo Li

2016-02-21

This study proposes a novel way to achieve high-throughput image acquisition based on a computer-recognizable micro-pattern implemented on a microfluidic device. We integrated the QR code, a two-dimensional barcode system, onto the microfluidic device to simplify imaging of multiple ROIs (regions of interest). A standard QR code pattern was modified to arrays of cylindrical structures of polydimethylsiloxane (PDMS). Utilizing the recognition of the micro-pattern, the proposed system enables: (1) device identification, which allows referencing additional information of the device, such as device imaging sequences or the ROIs and (2) composing a coordinate system for an arbitrarily located microfluidic device with respect to the stage. Based on these functionalities, the proposed method performs one-step high-throughput imaging for data acquisition in microfluidic devices without further manual exploration and locating of the desired ROIs. In our experience, the proposed method significantly reduced the time for the preparation of an acquisition. We expect that the method will innovatively improve the prototype device data acquisition and analysis.

Performances of different global positioning system devices for time-location tracking in air pollution epidemiological studies.

PubMed

Wu, Jun; Jiang, Chengsheng; Liu, Zhen; Houston, Douglas; Jaimes, Guillermo; McConnell, Rob

2010-11-23

People's time-location patterns are important in air pollution exposure assessment because pollution levels may vary considerably by location. A growing number of studies are using global positioning systems (GPS) to track people's time-location patterns. Many portable GPS units that archive location are commercially available at a cost that makes their use feasible for epidemiological studies. We evaluated the performance of five portable GPS data loggers and two GPS cell phones by examining positional accuracy in typical locations (indoor, outdoor, in-vehicle) and factors that influence satellite reception (building material, building type), acquisition time (cold and warm start), battery life, and adequacy of memory for data storage. We examined stationary locations (eg, indoor, outdoor) and mobile environments (eg, walking, traveling by vehicle or bus) and compared GPS locations to highly-resolved US Geological Survey (USGS) and Digital Orthophoto Quarter Quadrangle (DOQQ) maps. The battery life of our tested instruments ranged from <9 hours to 48 hours. The acquisition of location time after startup ranged from a few seconds to >20 minutes and varied significantly by building structure type and by cold or warm start. No GPS device was found to have consistently superior performance with regard to spatial accuracy and signal loss. At fixed outdoor locations, 65%-95% of GPS points fell within 20-m of the corresponding DOQQ locations for all the devices. At fixed indoor locations, 50%-80% of GPS points fell within 20-m of the corresponding DOQQ locations for all the devices except one. Most of the GPS devices performed well during commuting on a freeway, with >80% of points within 10-m of the DOQQ route, but the performance was significantly impacted by surrounding structures on surface streets in highly urbanized areas. All the tested GPS devices had limitations, but we identified several devices which showed promising performance for tracking subjects' time location patterns in epidemiological studies.

Performances of Different Global Positioning System Devices for Time-Location Tracking in Air Pollution Epidemiological Studies

PubMed Central

Wu, Jun; Jiang, Chengsheng; Liu, Zhen; Houston, Douglas; Jaimes, Guillermo; McConnell, Rob

2010-01-01

Background: People’s time-location patterns are important in air pollution exposure assessment because pollution levels may vary considerably by location. A growing number of studies are using global positioning systems (GPS) to track people’s time-location patterns. Many portable GPS units that archive location are commercially available at a cost that makes their use feasible for epidemiological studies. Methods: We evaluated the performance of five portable GPS data loggers and two GPS cell phones by examining positional accuracy in typical locations (indoor, outdoor, in-vehicle) and factors that influence satellite reception (building material, building type), acquisition time (cold and warm start), battery life, and adequacy of memory for data storage. We examined stationary locations (eg, indoor, outdoor) and mobile environments (eg, walking, traveling by vehicle or bus) and compared GPS locations to highly-resolved US Geological Survey (USGS) and Digital Orthophoto Quarter Quadrangle (DOQQ) maps. Results: The battery life of our tested instruments ranged from <9 hours to 48 hours. The acquisition of location time after startup ranged from a few seconds to >20 minutes and varied significantly by building structure type and by cold or warm start. No GPS device was found to have consistently superior performance with regard to spatial accuracy and signal loss. At fixed outdoor locations, 65%–95% of GPS points fell within 20-m of the corresponding DOQQ locations for all the devices. At fixed indoor locations, 50%–80% of GPS points fell within 20-m of the corresponding DOQQ locations for all the devices except one. Most of the GPS devices performed well during commuting on a freeway, with >80% of points within 10-m of the DOQQ route, but the performance was significantly impacted by surrounding structures on surface streets in highly urbanized areas. Conclusions: All the tested GPS devices had limitations, but we identified several devices which showed promising performance for tracking subjects’ time location patterns in epidemiological studies. PMID:21151593

Modelling of TES X-ray Microcalorimeters with a Novel Absorber Design

NASA Technical Reports Server (NTRS)

Iyomoto, Naoko; Bandler, Simon; Brefosky, Regis; Brown, Ari; Chervenak, James; Figueroa-Feliciano, Enectali; Finkbeiner, Frederick; Kelley, Richard; Kilbourne, Caroline; Lindeman, Mark;

Realizing 11.3% efficiency in PffBT4T-2OD fullerene organic solar cells via superior charge extraction at interfaces

NASA Astrophysics Data System (ADS)

Xu, Cheng; Wright, Matthew; Elumalai, Naveen Kumar; Mahmud, Md Arafat; Wang, Dian; Gonçales, Vinicius R.; Upama, Mushfika Baishakhi; Haque, Faiazul; Gooding, J. Justin; Uddin, Ashraf

2018-06-01

The influence of interface engineering on the performance and photovoltaic properties of the PffBT4T-2OD poly[(5,6-difluoro-2,1,3-benzothiadiazol-4,7-diyl)-alt-(3,3'''-di(2-octyldodecyl)-2,2';5',2″;5″,2'''-quaterthiophen-5,5'''-diy)] based polymer solar cells (PSCs) are investigated. Owing to the high crystallinity and processing parameter dependent morphology distribution of the PffBT4T-2OD polymer, the performance of the devices can vary significantly with power conversion efficiency (PCE) of around 10% has been reported via such morphology modification. In this work, we demonstrate the effect of trap state passivation at the electron transport layer (ETL)/Polymer interface on the performance of PffBT4T-2OD based PSCs. Aluminium doped ZnO (AZO) and pristine Zinc Oxide (ZnO) are employed as ETLs, which modified the polymer wettability and blend morphology. The interface engineered devices exhibited high PCE of over 11% with high J sc of about 22.5 mA/cm2 which is about 19% higher than that of the conventional ZnO based devices. The reason behind such distinct enhancements is investigated using several material and device characterization methods including electrochemical impedance spectroscopy (EIS). The recombination resistance ( R rec) of the AZO based device is found to be 4.5 times higher than that of the ZnO devices. The enhanced photovoltaic parameters of the AZO based device are attributed to the superior charge transport characteristics in the ETL as well as at the ETL/polymer interface, enabling effective charge extraction at the respective electrodes with much lesser recombination. The mechanism and the processes behind such enhancements are also elaborated in detail.

Analysis of the Effects of Individual Differences on Cognitive Performance for the Development of Military Socio-Cultural Performance Moderators

ERIC Educational Resources Information Center

Bagley, Katherine G.

2012-01-01

Technological devices are ubiquitous in nearly every facet of society. There are substantial investments made in organizations on a daily basis to improve information technology. From a military perspective, the ultimate goal of these highly sophisticated devices is to assist soldiers in achieving mission success across dynamic and often chaotic…

Performance of cardiopulmonary resuscitation feedback systems in a long-distance train with distributed traction.

PubMed

González-Otero, Digna M; de Gauna, Sofía Ruiz; Ruiz, Jesus; Rivero, Raquel; Gutierrez, J J; Saiz, Purificación; Russell, James K

2018-04-20

Out-of-hospital cardiac arrest is common in public locations, including public transportation sites. Feedback devices are increasingly being used to improve chest-compression quality. However, their performance during public transportation has not been studied yet. To test two CPR feedback devices representative of the current technologies (accelerometer and electromag- netic-field) in a long-distance train. Volunteers applied compressions on a manikin during the train route using both feedback devices. Depth and rate measurements computed by the devices were compared to the gold-standard values. Sixty-four 4-min records were acquired. The accelerometer-based device provided visual help in all experiments. Median absolute errors in depth and rate were 2.4 mm and 1.3 compressions per minute (cpm) during conventional speed, and 2.5 mm and 1.2 cpm during high speed. The electromagnetic-field-based device never provided CPR feedback; alert messages were shown instead. However, measurements were stored in its internal memory. Absolute errors for depth and rate were 2.6 mm and 0.7 cpm during conventional speed, and 2.6 mm and 0.7 cpm during high speed. Both devices were accurate despite the accelerations and the electromagnetic interferences induced by the train. However, the electromagnetic-field-based device would require modifications to avoid excessive alerts impeding feedback.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Nam-Gyu; Grätzel, Michael; Miyasaka, Tsutomu

Solar cells employing a halide perovskite with an organic cation now show power conversion efficiency of up to 22%. But, these cells are facing issues towards commercialization, such as the need to achieve long-term stability and the development of a manufacturing method for the reproducible fabrication of high-performance devices. We propose a strategy to obtain stable and commercially viable perovskite solar cells. A reproducible manufacturing method is suggested, as well as routes to manage grain boundaries and interfacial charge transport. Electroluminescence is regarded as a metric to gauge theoretical efficiency. We highlight how optimizing the design of device architectures ismore » important not only for achieving high efficiency but also for hysteresis-free and stable performance. Here, we argue that reliable device characterization is needed to ensure the advance of this technology towards practical applications. We believe that perovskite-based devices can be competitive with silicon solar modules, and discuss issues related to the safe management of toxic material.« less

Method and apparatus of cryogenic cooling for high temperature superconductor devices

DOEpatents

Yuan, Xing; Mine, Susumu

2005-02-15

A method and apparatus for providing cryogenic cooling to HTS devices, in particular those that are used in high-voltage electric power applications. The method involves pressurizing liquid cryogen to above one atmospheric pressure to improve its dielectric strength, while sub-cooling the liquid cryogen to below its saturation temperature in order to improve the performance of the HTS components of the device. An apparatus utilizing such a cooling method consists of a vessel that contains a pressurized gaseous cryogen region and a sub-cooled liquid cryogen bath, a liquid cryogen heating coupled with a gaseous cryogen venting scheme to maintain the pressure of the cryogen to a value in a range that corresponds to optimum dielectric strength of the liquid cryogen, and a cooling system that maintains the liquid cryogen at a temperature below its boiling point to improve the performance of HTS materials used in the device.

Analytic investigation of helicopter rotor blade appended aeroelastic devices

NASA Technical Reports Server (NTRS)

Bielawa, Richard L.

1984-01-01

Analytic evaluations of four different passive aeroelastic devices appended to helicopter rotor blades are presented. The devices consist of a passive tuned tab, a control coupled tab, an all-flying tip and a harmonic dilational airfoil tip. Each device was conceived for improving either aerodynamic performance or reducing vibratory control loads or hub shears. The evaluation was performed using a comprehensive rotor aeroelastic analysis (the G400PA code with appropriate modifications), together with data for a realistic helicopter rotor blade (the UH-60A Blackhawk), in high speed flight (90 m/s, 175 kts). The results of this study show that significant performance (L/(D sub e)) gains can be achieved with the all-flying free tip. Results from the harmonic dilational airfoil tip show the potential for moderate improvements in L/(D sub e). Finally, the results for the passive tuned tab and the control coupled tab, as configured for this study, show these devices to be impractical. Sections are included which describe the operation of each device, the required G400PA modifications, and the detailed results obtained for each device.

A Highly Miniaturized Inertial Grade Gyroscope for Space Applications

NASA Technical Reports Server (NTRS)

Wiberg, D. V.; Challoner, A. D.; Shcheglov, K.; Hayworth, K.; Bae, S.; Yee, K.; Blaes, B.; DAgostino, S.; Stock, T.

2001-01-01

The evolution of inertial grade gyroscopes for space applications represents well over 50 years of technology development and an investment of hundreds of millions of dollars. The workhorse product which represents the current state-of-the art for commercially available high performance devices is the Litton-Hemishperical Resonator Gyro (HRG) Inertial Measurement Unit (IMU). This product has a performance figure of merit of 0.003 deg/hr bias drift, a volume of 567 cubic inches, weighs 19 pounds, draws about 30 watts and costs over $1 million each. Clearly devices of this magnitude are not conducive to the minimized mass, volume, power, and cost constraints of outer planet missions. An approach to breaking these potential barriers is the use of Microelectromechanical Systems (MEMS) based inertial devices. Although substantially reduced in size, mass power and cost, this approach has produced devices in the tactical performance range of greater than 1 deg/hour bias drift. This level of performance satisfies the preponderance of high market volume requirements such as automotive and tactical munitions but does not meet the limited market quantity requirements for the high precision space based market. Because of the very limited size of the space based market, there is little economic incentive for commercial fabricators of tactical grade devices to address the necessary performance improvements. The Jet Propulsion Laboratory (JPL) in conjunction with Boeing Space Systems (BSS) is addressing this void to satisfy our mutual requirements in this area. The project objective to is to achieve 0.01 deg/hr performance in an IMU which is less than 10 cubic inches in volume, weighs less than 0.5 pounds, draws less than 1 watt and is available in volume production for less than $2500. Reductions of this magnitude will be mission enabling capabilities for a variety of anticipated outer planet mission attributes such as autonomous control and docking, formation flying and robotic outposts. The improved performance will be realized using improved relative precision fabrication, enhanced vibratory drive and sense designs, and statistical data analysis.

Phosphorization boosts the capacitance of mixed metal nanosheet arrays for high performance supercapacitor electrodes.

PubMed

Lan, Yingying; Zhao, Hongyang; Zong, Yan; Li, Xinghua; Sun, Yong; Feng, Juan; Wang, Yan; Zheng, Xinliang; Du, Yaping

2018-05-01

Binary transition metal phosphides hold immense potential as innovative electrode materials for constructing high-performance energy storage devices. Herein, porous binary nickel-cobalt phosphide (NiCoP) nanosheet arrays anchored on nickel foam (NF) were rationally designed as self-supported binder-free electrodes with high supercapacitance performance. Taking the combined advantages of compositional features and array architectures, the nickel foam supported NiCoP nanosheet array (NiCoP@NF) electrode possesses superior electrochemical performance in comparison with Ni-Co LDH@NF and NiCoO2@NF electrodes. The NiCoP@NF electrode shows an ultrahigh specific capacitance of 2143 F g-1 at 1 A g-1 and retained 1615 F g-1 even at 20 A g-1, showing excellent rate performance. Furthermore, a binder-free all-solid-state asymmetric supercapacitor device is designed, which exhibits a high energy density of 27 W h kg-1 at a power density of 647 W kg-1. The hierarchical binary nickel-cobalt phosphide nanosheet arrays hold great promise as advanced electrode materials for supercapacitors with high electrochemical performance.

Developing improved silica materials and devices for integrated optics applications

NASA Astrophysics Data System (ADS)

Maker, Ashley Julia

Due to their favorable optical and material properties, silica-based materials and devices have found many important applications throughout science and engineering, especially in sensing, communications, lasers, and integrated optics. Often, silica's properties ultimately limit the performance of these applications. To address this limitation, this thesis investigates the development of improved silica materials and optical devices, including silica films, coatings, waveguides, resonators, lasers, and sensors. Using sol-gel chemistry and microfabrication procedures, custom silica materials and devices are developed to benefit many applications. In this thesis, it is first demonstrated how the low optical loss of silica enables fabrication of low loss integrated waveguides and toroidal resonators with ultra-high quality factors. Then, by adding various rare earth and metal dopants to sol-gel silica, hybrid silica materials and devices are made with custom properties such as high refractive index and lasing capabilities. Finally, several applications are demonstrated, including the use of high refractive index coatings to control the behavior of light, development of Raman and ultra-low threshold rare earth microlasers, and a heterodyned microlaser sensor with significantly improved sensing performance. Future applications and directions of this research are also discussed.

Taking SiC Power Devices to the Final Frontier: Addressing Challenges of the Space Radiation Environment

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Casey, Megan

2017-01-01

Silicon carbide power device technology has the potential to enable a new generation of aerospace power systems that demand high efficiency, rapid switching, and reduced mass and volume in order to expand space-based capabilities. For this potential to be realized, SiC devices must be capable of withstanding the harsh space radiation environment. Commercial SiC components exhibit high tolerance to total ionizing dose but to date, have not performed well under exposure to heavy ion radiation representative of the on-orbit galactic cosmic rays. Insertion of SiC power device technology into space applications to achieve breakthrough performance gains will require intentional development of components hardened to the effects of these highly-energetic heavy ions. This work presents heavy-ion test data obtained by the authors over the past several years for discrete SiC power MOSFETs, JFETs, and diodes in order to increase the body of knowledge and understanding that will facilitate hardening of this technology to space radiation effects. Specifically, heavy-ion irradiation data taken under different bias, temperature, and ion beam conditions is presented for devices from different manufacturers, and the emerging patterns discussed.

Fully Solution-Processed Flexible Organic Thin Film Transistor Arrays with High Mobility and Exceptional Uniformity

PubMed Central

Fukuda, Kenjiro; Takeda, Yasunori; Mizukami, Makoto; Kumaki, Daisuke; Tokito, Shizuo

2014-01-01

Printing fully solution-processed organic electronic devices may potentially revolutionize production of flexible electronics for various applications. However, difficulties in forming thin, flat, uniform films through printing techniques have been responsible for poor device performance and low yields. Here, we report on fully solution-processed organic thin-film transistor (TFT) arrays with greatly improved performance and yields, achieved by layering solution-processable materials such as silver nanoparticle inks, organic semiconductors, and insulating polymers on thin plastic films. A treatment layer improves carrier injection between the source/drain electrodes and the semiconducting layer and dramatically reduces contact resistance. Furthermore, an organic semiconductor with large-crystal grains results in TFT devices with shorter channel lengths and higher field-effect mobilities. We obtained mobilities of over 1.2 cm2 V−1 s−1 in TFT devices with channel lengths shorter than 20 μm. By combining these fabrication techniques, we built highly uniform organic TFT arrays with average mobility levels as high as 0.80 cm2 V−1 s−1 and ideal threshold voltages of 0 V. These results represent major progress in the fabrication of fully solution-processed organic TFT device arrays. PMID:24492785

Creating a Powerful Learning Environment with Networked Mobile Learning Devices

ERIC Educational Resources Information Center

Crawford, Valerie M.

2007-01-01

Highly mobile devices can make important information available to teachers in real-time, anywhere in the classroom, and in the form of easy-to-read graphical displays that support classroom decision making. By supporting such important teaching activities, we can create a high-performance classroom that supports teachers and the art of teaching,…

The performance characteristics of lateral flow devices with 2 strains of highly pathogenic avian influenza virus

USDA-ARS?s Scientific Manuscript database

Lateral flow devices (LFD) are commercially available and provide a fast, highly specific, on-site test for avian influenza. Because of the low analytic sensitivity of LFD tests at low virus concentrations, targeted sampling of sick and dead birds has been proposed in order to increase detection pr...

First principles calculations of La2O3/GaAs interface properties under biaxial strain and hydrostatic pressure

NASA Astrophysics Data System (ADS)

Shi, Li-Bin; Li, Ming-Biao; Xiu, Xiao-Ming; Liu, Xu-Yang; Zhang, Kai-Cheng; Li, Chun-Ran; Dong, Hai-Kuan

2017-04-01

La2O3 is a potential dielectric material with high permittivity (high-κ) for metal-oxide-semiconductor (MOS) devices. However, band offsets and oxide defects should still be concerned. Smaller band offsets and carrier traps increase leakage current, and degenerate performance of the devices. In this paper, the interface behaviors of La2O3/GaAs under biaxial strain and hydrostatic pressure are investigated, which is performed by first principles calculations based on density functional theory (DFT). Strain engineering is attempted to improve performance of the metal/La2O3/GaAs devices. First of all, we creatively realize band alignment of La2O3/GaAs interface under biaxial strain and hydrostatic pressure. The proper biaxial tensile strain can effectively increase valence band offsets (VBO) and conduction band offsets (CBO), which can be used to suppress leakage current. However, the VBO will decrease with the increase of hydrostatic pressure, indicating that performance of the devices is degenerated. Then, a direct tunneling leakage current model is used to investigate current and voltage characteristics of the metal/La2O3/GaAs. The impact of biaxial strain and hydrostatic pressure on leakage current is discussed. At last, formation energies and transition levels of oxygen interstitial (Oi) and oxygen vacancy (VO) in La2O3 are assessed. We investigate how they will affect performance of the devices.

High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chun, Young Tea; Chu, Daping, E-mail: dpc31@cam.ac.uk; Neeves, Matthew

2014-11-10

High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiO{sub x} thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2 cm{sup 2}, exhibiting an optical contrast of 73.11% at the wavelength of 470 nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively.

Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

NASA Astrophysics Data System (ADS)

Son, Dong-Hyeok; Jo, Young-Woo; Won, Chul-Ho; Lee, Jun-Hyeok; Seo, Jae Hwa; Lee, Sang-Heung; Lim, Jong-Won; Kim, Ji Heon; Kang, In Man; Cristoloveanu, Sorin; Lee, Jung-Hee

2018-03-01

Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ∼20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ∼800 V with off-state leakage current as low as ∼10-12 A and high on/off current ratio (Ion/Ioff) of 1010. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.

Transferred wrinkled Al2O3 for highly stretchable and transparent graphene-carbon nanotube transistors

NASA Astrophysics Data System (ADS)

Chae, Sang Hoon; Yu, Woo Jong; Bae, Jung Jun; Duong, Dinh Loc; Perello, David; Jeong, Hye Yun; Ta, Quang Huy; Ly, Thuc Hue; Vu, Quoc An; Yun, Minhee; Duan, Xiangfeng; Lee, Young Hee

2013-05-01

Despite recent progress in producing transparent and bendable thin-film transistors using graphene and carbon nanotubes, the development of stretchable devices remains limited either by fragile inorganic oxides or polymer dielectrics with high leakage current. Here we report the fabrication of highly stretchable and transparent field-effect transistors combining graphene/single-walled carbon nanotube (SWCNT) electrodes and a SWCNT-network channel with a geometrically wrinkled inorganic dielectric layer. The wrinkled Al2O3 layer contained effective built-in air gaps with a small gate leakage current of 10-13 A. The resulting devices exhibited an excellent on/off ratio of ~105, a high mobility of ~40 cm2 V-1 s-1 and a low operating voltage of less than 1 V. Importantly, because of the wrinkled dielectric layer, the transistors retained performance under strains as high as 20% without appreciable leakage current increases or physical degradation. No significant performance loss was observed after stretching and releasing the devices for over 1,000 times. The sustainability and performance advances demonstrated here are promising for the adoption of stretchable electronics in a wide variety of future applications.

Large-scale synthesis of high-quality hexagonal boron nitride nanosheets for large-area graphene electronics.

PubMed

Lee, Kang Hyuck; Shin, Hyeon-Jin; Lee, Jinyeong; Lee, In-yeal; Kim, Gil-Ho; Choi, Jae-Young; Kim, Sang-Woo

2012-02-08

Hexagonal boron nitride (h-BN) has received a great deal of attention as a substrate material for high-performance graphene electronics because it has an atomically smooth surface, lattice constant similar to that of graphene, large optical phonon modes, and a large electrical band gap. Herein, we report the large-scale synthesis of high-quality h-BN nanosheets in a chemical vapor deposition (CVD) process by controlling the surface morphologies of the copper (Cu) catalysts. It was found that morphology control of the Cu foil is much critical for the formation of the pure h-BN nanosheets as well as the improvement of their crystallinity. For the first time, we demonstrate the performance enhancement of CVD-based graphene devices with large-scale h-BN nanosheets. The mobility of the graphene device on the h-BN nanosheets was increased 3 times compared to that without the h-BN nanosheets. The on-off ratio of the drain current is 2 times higher than that of the graphene device without h-BN. This work suggests that high-quality h-BN nanosheets based on CVD are very promising for high-performance large-area graphene electronics. © 2012 American Chemical Society

Enhancing electronic and optoelectronic performances of tungsten diselenide by plasma treatment.

PubMed

Xie, Yuan; Wu, Enxiu; Hu, Ruixue; Qian, Shuangbei; Feng, Zhihong; Chen, Xuejiao; Zhang, Hao; Xu, Linyan; Hu, Xiaodong; Liu, Jing; Zhang, Daihua

2018-06-21

Transition metal dichalcogenides (TMDCs) have recently become spotlighted as nanomaterials for future electronic and optoelectronic devices. In this work, we develop an effective approach to enhance the electronic and optoelectronic performances of WSe2-based devices by N2O plasma treatment. The hole mobility and sheet density increase by 2 and 5 orders of magnitude, reaching 110 cm2 V-1 s-1 and 2.2 × 1012 cm-2, respectively, after the treatment. At the same time, the contact resistance (Rc) between WSe2 and its metal electrode drop by 5 orders of magnitude from 1.0 GΩ μm to 28.4 kΩ μm. The WSe2 photoconductor exhibits superior performance with high responsivity (1.5 × 105 A W-1), short response time (<2 ms), high detectivity (3.6 × 1013 Jones) and very large photoconductive gain (>106). We have also built a lateral p-n junction on a single piece of WSe2 flake by selective plasma exposure. The junction reaches an exceedingly high rectifying ratio of 106, an excellent photoresponsivity of 2.49 A W-1 and a fast response of 8 ms. The enhanced optoelectronic performance is attributed to band-engineering through the N2O plasma treatment, which can potentially serve as an effective and versatile approach for device engineering and optimization in a wide range of electronic and optoelectronic devices based on 2D materials.

Can ferroelectric polarization explain the high performance of hybrid halide perovskite solar cells?

PubMed

Sherkar, Tejas S; Koster, L Jan Anton

2016-01-07

The power conversion efficiency of photovoltaic cells based on the use of hybrid halide perovskites, CH3NH3PbX3 (X = Cl, Br, I), now exceeds 20%. Recently, it was suggested that this high performance originates from the presence of ferroelectricity in the perovskite, which is hypothesized to lower charge recombination in the device. Here, we investigate and quantify the influence of mesoscale ferroelectric polarization on the device performance of perovskite solar cells. We implement a 3D drift diffusion model to describe the solar cell operation. To account for the mesoscale ferroelectricity, we incorporate domains defined by polarization strength, P, in 3D space, forming different polarization landscapes or microstructures. Study of microstructures with highly-ordered polarized domains shows that charge transport and recombination in the solar cell depends significantly on the polarization landscape viz. the orientation of domain boundaries and the size of domains. In the case of the microstructure with random correlated polarization, a realistic scenario, we find indication of the existence of channels for efficient charge transport in the device which leads to lowering of charge recombination, as evidenced by the high fill factor (FF). However, the high open-circuit voltage (VOC), which is typical of high performance perovskite solar cells, is unlikely to be explained by the presence of ferroelectric polarization in the perovskite.

High performance AlScN thin film based surface acoustic wave devices with large electromechanical coupling coefficient

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Wenbo; He, Xingli; Ye, Zhi, E-mail: yezhi@zju.edu.cn, E-mail: jl2@bolton.ac.uk

AlN and AlScN thin films with 27% scandium (Sc) were synthesized by DC magnetron sputtering deposition and used to fabricate surface acoustic wave (SAW) devices. Compared with AlN-based devices, the AlScN SAW devices exhibit much better transmission properties. Scandium doping results in electromechanical coupling coefficient, K{sup 2}, in the range of 2.0% ∼ 2.2% for a wide normalized thickness range, more than a 300% increase compared to that of AlN-based SAW devices, thus demonstrating the potential applications of AlScN in high frequency resonators, sensors, and high efficiency energy harvesting devices. The coupling coefficients of the present AlScN based SAW devices are muchmore » higher than that of the theoretical calculation based on some assumptions for AlScN piezoelectric material properties, implying there is a need for in-depth investigations on the material properties of AlScN.« less

High efficiency photovoltaic device

DOEpatents

Guha, Subhendu; Yang, Chi C.; Xu, Xi Xiang

1999-11-02

An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.

Large bandgap reduced graphene oxide (rGO) based n-p + heterojunction photodetector with improved NIR performance

NASA Astrophysics Data System (ADS)

Singh, Manjri; Kumar, Gaurav; Prakash, Nisha; Khanna, Suraj P.; Pal, Prabir; Singh, Surinder P.

2018-04-01

Integration of two-dimensional reduced graphene oxide (rGO) with conventional Si semiconductor offers novel strategies for realizing broadband photodiode with enhanced device performance. In this quest, we have synthesized large bandgap rGO and fabricated metal-free broadband (300–1100 nm) back-to-back connected np-pn hybrid photodetector utilizing drop casted n-rGO/p +-Si heterojunctions with high performance in NIR region (830 nm). With controlled illumination, the device exhibited a peak responsivity of 16.7 A W‑1 and peak detectivity of 2.56 × 1012 Jones under 830 nm illumination (11 μW cm‑2) at 1 V applied bias with fast response (∼460 μs) and recovery time (∼446 μs). The fabricated device demonstrated excellent repeatability, durability and photoswitching behavior with high external quantum efficiency (∼2.5 × 103%), along with ultrasensitive behavior at low light conditions.

An Exploration into How Physical Activity Data-Recording Devices Could Be Used in Computer-Supported Data Investigations

ERIC Educational Resources Information Center

Lee, Victor R.; DuMont, Maneksha

2010-01-01

There is a great potential opportunity to use portable physical activity monitoring devices as data collection tools for educational purposes. Using one such device, we designed and implemented a weeklong workshop with high school students to test the utility of such technology. During that intervention, students performed data investigations of…

Measuring arterial oxygenation in a high altitude field environment: comparing portable pulse oximetry with blood gas analysis.

PubMed

Ross, Elliot M; Matteucci, Michael J; Shepherd, Matthew; Barker, Matthew; Orr, Lance

2013-06-01

High altitude environments present unique medical treatment challenges. Medical providers often use small portable pulse oximetry devices to help guide their clinical decision making. A significant body of high altitude research is based on the use of these devices to monitor hypoxia, yet there is a paucity of evidence that these devices are accurate in these environments. We studied whether these devices perform accurately and reliably under true mountain conditions. Healthy unacclimatized active-duty military volunteers participating in mountain warfare training at 2100 m (6900 feet) above sea level were evaluated with several different pulse oximetry devices while in a cold weather, high altitude field environment and then had arterial blood gases (ABG) drawn using an i-STAT for comparison. The pulse oximeter readings were compared with the gold standard ABG readings. A total of 49 individuals completed the study. There was no statistically significant difference between any of the devices and the gold standard of ABG. The best performing device was the PalmSAT (PS) 8000SM finger probe with a mean difference of 2.17% and SD of 2.56 (95% CI, 1.42% to 2.92%). In decreasing order of performance were the PS 8000AA finger probe (mean ± SD, 2.54% ± 2.68%; 95% CI, 1.76% to 3.32%), the PS 8000Q ear probe (2.47% ± 4.36%; 95% CI, 1.21% to 3.75%), the Nonin Onyx 9500 (3.29% ± 3.12%; 95% CI, 2.39% to 4.20%), and finally the PS 8000R forehead reflectance sensor (5.15% ± 2.97%; 95% CI, 4.28% to 6.01%). Based on the results of this study, results of the newer portable pulse oximeters appear to be closely correlated to that of the ABG measurements when tested in true mountain conditions. Copyright © 2013 Wilderness Medical Society. Published by Elsevier Inc. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bradshaw, Nathan P.; Severt, Sean Y.; Wang, Zhaoying

Biocompatible materials capable of controlled actuation under biologically relevant conditions are in high demand for use in a number of biomedical applications. Recently, we demonstrated that a composite material composed of silk biopolymer and the conducting polymer poly(pyrrole) can bend under an applied voltage using a simple bilayer device. Here we present further characterization of these bilayer actuators using time of flight secondary ion mass spectrometry, and provide clarification on the mechanism of actuation and factors affecting device performance and stability. We will discuss the results of this study in the context of strategies for optimization of device performance.

The role of surface ligands in quantum-dot devices: Villain or unsung hero?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pietryga, Jeffrey Michael

For over three decades, the study of nanocrystal quantum dots (QDs), which are solution-synthesized nanometer-scale bits of semiconductor materials, has produced singular advances in both our understanding of quantum confinement effects, and in our ability to make use of them in tech-relevant materials. Accordingly, QDs have found their way into the marketplace, specifically as high-performance fluorophores for, e.g., displays and biolabeling. In such applications, optimization of the QD surface, including the passivating ligands, is key to keeping photo-excited carriers from leaving the QD interior before recombining, resulting in a high fluorescence efficiency. Increasingly, attention has turned to realize the promisemore » of QDs for optoelectronic applications (e.g., solar cells, LEDs, sensors) which require charge carriers to controllably enter, exit and/or travel through QDs, a much more challenging problem. In this scenario, the role of the QD surface must be completely reimagined, from being an impenetrable wall to being a gateway, or even a ramp. In this talk, I’ll explore the inherent contrast between QD fluorophore and device applications, and describe how ligands, originally thought only to be impediments to QD electronic devices, may actually give the savvy QD device designer control over function and performance in a manner unknown in bulk semiconductor devices. Finally, I’ll survey recent efforts at Los Alamos to develop a universal tool box for deposition of conductive QD films that may finally allow the manufacturing of economical, high-performance devices for a wide range of applications.« less

Achieving High Performance Perovskite Solar Cells

NASA Astrophysics Data System (ADS)

Yang, Yang

2015-03-01

Recently, metal halide perovskite based solar cell with the characteristics of rather low raw materials cost, great potential for simple process and scalable production, and extreme high power conversion efficiency (PCE), have been highlighted as one of the most competitive technologies for next generation thin film photovoltaic (PV). In UCLA, we have realized an efficient pathway to achieve high performance pervoskite solar cells, where the findings are beneficial to this unique materials/devices system. Our recent progress lies in perovskite film formation, defect passivation, transport materials design, interface engineering with respect to high performance solar cell, as well as the exploration of its applications beyond photovoltaics. These achievements include: 1) development of vapor assisted solution process (VASP) and moisture assisted solution process, which produces perovskite film with improved conformity, high crystallinity, reduced recombination rate, and the resulting high performance; 2) examination of the defects property of perovskite materials, and demonstration of a self-induced passivation approach to reduce carrier recombination; 3) interface engineering based on design of the carrier transport materials and the electrodes, in combination with high quality perovskite film, which delivers 15 ~ 20% PCEs; 4) a novel integration of bulk heterojunction to perovskite solar cell to achieve better light harvest; 5) fabrication of inverted solar cell device with high efficiency and flexibility and 6) exploration the application of perovskite materials to photodetector. Further development in film, device architecture, and interfaces will lead to continuous improved perovskite solar cells and other organic-inorganic hybrid optoelectronics.

Nanoparticle-Enhanced Silver-Nanowire Plasmonic Electrodes for High-Performance Organic Optoelectronic Devices.

PubMed

Kim, Taehyo; Kang, Saewon; Heo, Jungwoo; Cho, Seungse; Kim, Jae Won; Choe, Ayoung; Walker, Bright; Shanker, Ravi; Ko, Hyunhyub; Kim, Jin Young

2018-05-21

Improved performance in plasmonic organic solar cells (OSCs) and organic light-emitting diodes (OLEDs) via strong plasmon-coupling effects generated by aligned silver nanowire (AgNW) transparent electrodes decorated with core-shell silver-silica nanoparticles (Ag@SiO 2 NPs) is demonstrated. NP-enhanced plasmonic AgNW (Ag@SiO 2 NP-AgNW) electrodes enable substantially enhanced radiative emission and light absorption efficiency due to strong hybridized plasmon coupling between localized surface plasmons (LSPs) and propagating surface plasmon polaritons (SPPs) modes, which leads to improved device performance in organic optoelectronic devices (OODs). The discrete dipole approximation (DDA) calculation of the electric field verifies a strongly enhanced plasmon-coupling effect caused by decorating core-shell Ag@SiO 2 NPs onto the AgNWs. Notably, an electroluminescence efficiency of 25.33 cd A -1 (at 3.2 V) and a power efficiency of 25.14 lm W -1 (3.0 V) in OLEDs, as well as a power conversion efficiency (PCE) value of 9.19% in OSCs are achieved using hybrid Ag@SiO 2 NP-AgNW films. These are the highest values reported to date for optoelectronic devices based on AgNW electrodes. This work provides a new design platform to fabricate high-performance OODs, which can be further explored in various plasmonic and optoelectronic devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A Two-Step Absorber Deposition Approach To Overcome Shunt Losses in Thin-Film Solar Cells: Using Tin Sulfide as a Proof-of-Concept Material System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Steinmann, Vera; Chakraborty, Rupak; Rekemeyer, Paul H.

2016-08-31

As novel absorber materials are developed and screened for their photovoltaic (PV) properties, the challenge remains to reproducibly test promising candidates for high-performing PV devices. Many early-stage devices are prone to device shunting due to pinholes in the absorber layer, producing 'false-negative' results. Here, we demonstrate a device engineering solution toward a robust device architecture, using a two-step absorber deposition approach. We use tin sulfide (SnS) as a test absorber material. The SnS bulk is processed at high temperature (400 degrees C) to stimulate grain growth, followed by a much thinner, low-temperature (200 degrees C) absorber deposition. At a lowermore » process temperature, the thin absorber overlayer contains significantly smaller, densely packed grains, which are likely to provide a continuous coating and fill pinholes in the underlying absorber bulk. We compare this two-step approach to the more standard approach of using a semi-insulating buffer layer directly on top of the annealed absorber bulk, and we demonstrate a more than 3.5x superior shunt resistance Rsh with smaller standard error ..sigma..Rsh. Electron-beam-induced current (EBIC) measurements indicate a lower density of pinholes in the SnS absorber bulk when using the two-step absorber deposition approach. We correlate those findings to improvements in the device performance and device performance reproducibility.« less

Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance

DOEpatents

Zolper, John C.; Sherwin, Marc E.; Baca, Albert G.

2000-01-01

A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is formed and a single anneal at moderate temperature is then performed. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions co-implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region of the Si-channel tail, but does not contribute substantially to the acceptor concentration in the buried p region. As a result, the invention provides for improved field effect semiconductor and related devices with enhancement of both DC and high-frequency performance.

MinT: Middleware for Cooperative Interaction of Things

PubMed Central

Jeon, Soobin; Jung, Inbum

2017-01-01

This paper proposes an Internet of Things (IoT) middleware called Middleware for Cooperative Interaction of Things (MinT). MinT supports a fully distributed IoT environment in which IoT devices directly connect to peripheral devices easily construct a local or global network, and share their data in an energy efficient manner. MinT provides a sensor abstract layer, a system layer and an interaction layer. These enable integrated sensing device operations, efficient resource management, and active interconnection between peripheral IoT devices. In addition, MinT provides a high-level API to develop IoT devices easily for IoT device developers. We aim to enhance the energy efficiency and performance of IoT devices through the performance improvements offered by MinT resource management and request processing. The experimental results show that the average request rate increased by 25% compared to Californium, which is a middleware for efficient interaction in IoT environments with powerful performance, an average response time decrease of 90% when resource management was used, and power consumption decreased by up to 68%. Finally, the proposed platform can reduce the latency and power consumption of IoT devices. PMID:28632182

MinT: Middleware for Cooperative Interaction of Things.

PubMed

Jeon, Soobin; Jung, Inbum

2017-06-20

This paper proposes an Internet of Things (IoT) middleware called Middleware for Cooperative Interaction of Things (MinT). MinT supports a fully distributed IoT environment in which IoT devices directly connect to peripheral devices easily construct a local or global network, and share their data in an energy efficient manner. MinT provides a sensor abstract layer, a system layer and an interaction layer. These enable integrated sensing device operations, efficient resource management, and active interconnection between peripheral IoT devices. In addition, MinT provides a high-level API to develop IoT devices easily for IoT device developers. We aim to enhance the energy efficiency and performance of IoT devices through the performance improvements offered by MinT resource management and request processing. The experimental results show that the average request rate increased by 25% compared to Californium, which is a middleware for efficient interaction in IoT environments with powerful performance, an average response time decrease of 90% when resource management was used, and power consumption decreased by up to 68%. Finally, the proposed platform can reduce the latency and power consumption of IoT devices.

Silicon nanowires for photovoltaic solar energy conversion.

PubMed

Peng, Kui-Qing; Lee, Shuit-Tong

2011-01-11

Semiconductor nanowires are attracting intense interest as a promising material for solar energy conversion for the new-generation photovoltaic (PV) technology. In particular, silicon nanowires (SiNWs) are under active investigation for PV applications because they offer novel approaches for solar-to-electric energy conversion leading to high-efficiency devices via simple manufacturing. This article reviews the recent developments in the utilization of SiNWs for PV applications, the relationship between SiNW-based PV device structure and performance, and the challenges to obtaining high-performance cost-effective solar cells.

Recent cryocooler progress in Japan

NASA Technical Reports Server (NTRS)

Matsubara, Y.

1985-01-01

The progress of cryocoolers and related devices in Japan is reviewed. The Japanese National Railways has developed the light weight 4 K on-board refrigerators since 1977 as part of the MAGLEV train program. Superconducting and cryogenic fundamental technology was examined which included high performance cryocooler, magnetic refrigerator and superfluid refrigeration. Space cryogenics such as the cooling systems of IR-detectors was studied. Cryocooler for special applications such as cryopump, NMR-CT and JJ devices was investigated. Compact heat exchangers, high performance regenerators and reliable compressors are investigated as a critical component technology.

Influence of deep defects on device performance of thin-film polycrystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Fehr, M.; Simon, P.; Sontheimer, T.; Leendertz, C.; Gorka, B.; Schnegg, A.; Rech, B.; Lips, K.

2012-09-01

Employing quantitative electron-paramagnetic resonance analysis and numerical simulations, we investigate the performance of thin-film polycrystalline silicon solar cells as a function of defect density. We find that the open-circuit voltage is correlated to the density of defects, which we assign to coordination defects at grain boundaries and in dislocation cores. Numerical device simulations confirm the observed correlation and indicate that the device performance is limited by deep defects in the absorber bulk. Analyzing the defect density as a function of grain size indicates a high concentration of intra-grain defects. For large grains (>2 μm), we find that intra-grain defects dominate over grain boundary defects and limit the solar cell performance.

High-performance ternary blend polymer solar cells involving both energy transfer and hole relay processes

DOE PAGES

Lu, Luyao; Chen, Wei; Xu, Tao; ...

2015-06-04

The integration of multiple materials with complementary absorptions into a single junction device is regarded as an efficient way to enhance the power conversion efficiency (PCE) of organic solar cells (OSCs). However, because of increased complexity with one more component, only limited high-performance ternary systems have been demonstrated previously. Here we report an efficient ternary blend OSC with a PCE of 9.2%. We show that the third component can reduce surface trap densities in the ternary blend. Detailed studies unravel that the improved performance results from synergistic effects of enlarged open circuit voltage, suppressed trap-assisted recombination, enhanced light absorption, increasedmore » hole extraction, efficient energy transfer and better morphology. As a result, the working mechanism and high device performance demonstrate new insights and design guidelines for high-performance ternary blend solar cells and suggest that ternary structure is a promising platform to boost the efficiency of OSCs.« less

DEVICE TECHNOLOGY. Nanomaterials in transistors: From high-performance to thin-film applications.

PubMed

Franklin, Aaron D

2015-08-14

For more than 50 years, silicon transistors have been continuously shrunk to meet the projections of Moore's law but are now reaching fundamental limits on speed and power use. With these limits at hand, nanomaterials offer great promise for improving transistor performance and adding new applications through the coming decades. With different transistors needed in everything from high-performance servers to thin-film display backplanes, it is important to understand the targeted application needs when considering new material options. Here the distinction between high-performance and thin-film transistors is reviewed, along with the benefits and challenges to using nanomaterials in such transistors. In particular, progress on carbon nanotubes, as well as graphene and related materials (including transition metal dichalcogenides and X-enes), outlines the advances and further research needed to enable their use in transistors for high-performance computing, thin films, or completely new technologies such as flexible and transparent devices. Copyright © 2015, American Association for the Advancement of Science.

EVALUATION OF FOUR NOVEL FINE PARTICULATE COLLECTION DEVICES

EPA Science Inventory

The report gives results of an experimental performance evaluation of four novel fine particulate control devices: the Johns-Manville Cleanable High-Efficiency Air Filtration (CHEAF) System, the APS Electrostatic Scrubber, the APS Electrotube, and the TRW Charged Droplet Scrubber...

Epitaxial Technologies for SiGeSn High Performance Optoelectronic Devices

DTIC Science & Technology

2015-04-29

comparison for specific detectivity (D*) between GeSn and other market dominating infrared detectors in short wavelength infrared range. An improved...Fig. 22(b). For this set of devices wherein the dark current is high, the shot noise dominates over other noise mechanisms. As applied voltage...interdigitated electrodes to allow high responsivity and low noise current. Photodiodes: The team has developed GeSn photodiode detector , which is a

Towards Highly-Efficient Phototriggered Data Storage by Utilizing a Diketopyrrolopyrrole-Based Photoelectronic Small Molecule.

PubMed

Li, Yang; Li, Hua; He, Jinghui; Xu, Qingfeng; Li, Najun; Chen, Dongyun; Lu, Jianmei

2016-07-20

A cooperative photoelectrical strategy is proposed for effectively modulating the performance of a multilevel data-storage device. By taking advantage of organic photoelectronic molecules as storage media, the fabricated device exhibited enhanced working parameters under the action of both optical and electrical inputs. In cooperation with UV light, the operating voltages of the memory device were decreased, which was beneficial for low energy consumption. Moreover, the ON/OFF current ratio was more tunable and facilitated high-resolution multilevel storage. Compared with previous methods that focused on tuning the storage media, this study provides an easy approach for optimizing organic devices through multiple physical channels. More importantly, this method holds promise for integrating multiple functionalities into high-density data-storage devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of an efficient DC-DC SEPIC converter using wide bandgap power devices for high step-up applications

NASA Astrophysics Data System (ADS)

Al-bayati, Ali M. S.; Alharbi, Salah S.; Alharbi, Saleh S.; Matin, Mohammad

2017-08-01

A highly efficient high step-up dc-dc converter is the major requirement in the integration of low voltage renewable energy sources, such as photovoltaic panel module and fuel cell stacks, with a load or utility. This paper presents the development of an efficient dc-dc single-ended primary-inductor converter (SEPIC) for high step-up applications. Three SEPIC converters are designed and studied using different combinations of power devices: a combination based on all Si power devices using a Si-MOSFET and a Si-diode and termed as Si/Si, a combination based on a hybrid of Si and SiC power devices using the Si-MOSFET and a SiC-Schottky diode and termed as Si/SiC, and a combination based on all SiC power devices using a SiC-MOSFET and the SiC-Schottky diode and termed as SiC/SiC. The switching behavior of the Si-MOSFET and SiC-MOSFET is characterized and analyzed within the different combinations at the converter level. The effect of the diode type on the converter's overall performance is also discussed. The switching energy losses, total power losses, and the overall performance effciency of the converters are measured and reported under different switching frequencies. Furthermore, the potential of the designed converters to operate efficiently at a wide range of input voltages and output powers is studied. The analysis and results show an outstanding performance efficiency of the designed SiC/SiC based converter under a wide range of operating conditions.

Synthesis and properties of silicon nanowire devices

NASA Astrophysics Data System (ADS)

Byon, Kumhyo

Silicon nanowire (SiNW) is a very attractive one-dimensional material for future nanoelectronic applications. Reliable control of key field effect transistor (FET) parameters such as conductance, mobility, threshold voltage and on/off ratio is crucial to the applications of SiNW to working logic devices and integrated circuits. In this thesis, we fabricated silicon nanowire field effect transistors (SiNW FETs) and studied the dependence of their electrical transport properties upon various parameters including SiNW growth conditions, post-growth doping, and contact annealing. From these studies, we found how different processes control important FET characteristics. Key accomplishments of this thesis include p-channel enhancement mode FETs, n-channel FETs by post-growth vapor doping and high performance ambipolar devices. In the first part of this work, single crystalline SiNWs were synthesized by thermal evaporation without gold catalysts. FETs were fabricated using both as-grown SiNWs and post-growth n-doped SiNWs. FET from p-type source materials behaves as a p-channel enhancement mode FET which is predominant in logic devices due to its fast operation and low power consumption. Using bismuth vapor, the as-grown SiNWs were doped into n-type materials. The majority carriers in SiNWs can therefore be controlled by proper choice of the vapor phase dopant species. Post-growth doping using vapor phase is applicable to other nanowire systems. In the second part, high performance ambipolar FETs were fabricated. A two step annealing process was used to control the Schottky barrier between SiNW and metal contacts in order to enhance device performance. Initial p-channel SiNW FETs were converted into ambipolar SiNW FETs after contact annealing. Furthermore, significant increases in both on/off ratio and channel mobilities were achieved after contact annealing. Promising device structures to implement ambipolar devices into large scale integrated circuits were proposed. The contributions of this study are to further understanding of the electrical transport properties of SiNWs and to provide optimized processes to fabricate emerging high performance nanoelectronic devices using SiNWs for future generation beyond bulk silicon.

Metal oxide resistive random access memory based synaptic devices for brain-inspired computing

NASA Astrophysics Data System (ADS)

Gao, Bin; Kang, Jinfeng; Zhou, Zheng; Chen, Zhe; Huang, Peng; Liu, Lifeng; Liu, Xiaoyan

2016-04-01

The traditional Boolean computing paradigm based on the von Neumann architecture is facing great challenges for future information technology applications such as big data, the Internet of Things (IoT), and wearable devices, due to the limited processing capability issues such as binary data storage and computing, non-parallel data processing, and the buses requirement between memory units and logic units. The brain-inspired neuromorphic computing paradigm is believed to be one of the promising solutions for realizing more complex functions with a lower cost. To perform such brain-inspired computing with a low cost and low power consumption, novel devices for use as electronic synapses are needed. Metal oxide resistive random access memory (ReRAM) devices have emerged as the leading candidate for electronic synapses. This paper comprehensively addresses the recent work on the design and optimization of metal oxide ReRAM-based synaptic devices. A performance enhancement methodology and optimized operation scheme to achieve analog resistive switching and low-energy training behavior are provided. A three-dimensional vertical synapse network architecture is proposed for high-density integration and low-cost fabrication. The impacts of the ReRAM synaptic device features on the performances of neuromorphic systems are also discussed on the basis of a constructed neuromorphic visual system with a pattern recognition function. Possible solutions to achieve the high recognition accuracy and efficiency of neuromorphic systems are presented.

Optimization of Microelectronic Devices for Sensor Applications

NASA Technical Reports Server (NTRS)

Cwik, Tom; Klimeck, Gerhard

2000-01-01

The NASA/JPL goal to reduce payload in future space missions while increasing mission capability demands miniaturization of active and passive sensors, analytical instruments and communication systems among others. Currently, typical system requirements include the detection of particular spectral lines, associated data processing, and communication of the acquired data to other systems. Advances in lithography and deposition methods result in more advanced devices for space application, while the sub-micron resolution currently available opens a vast design space. Though an experimental exploration of this widening design space-searching for optimized performance by repeated fabrication efforts-is unfeasible, it does motivate the development of reliable software design tools. These tools necessitate models based on fundamental physics and mathematics of the device to accurately model effects such as diffraction and scattering in opto-electronic devices, or bandstructure and scattering in heterostructure devices. The software tools must have convenient turn-around times and interfaces that allow effective usage. The first issue is addressed by the application of high-performance computers and the second by the development of graphical user interfaces driven by properly developed data structures. These tools can then be integrated into an optimization environment, and with the available memory capacity and computational speed of high performance parallel platforms, simulation of optimized components can proceed. In this paper, specific applications of the electromagnetic modeling of infrared filtering, as well as heterostructure device design will be presented using genetic algorithm global optimization methods.

Wearable Performance Devices in Sports Medicine.

PubMed

Li, Ryan T; Kling, Scott R; Salata, Michael J; Cupp, Sean A; Sheehan, Joseph; Voos, James E

2016-01-01

Wearable performance devices and sensors are becoming more readily available to the general population and athletic teams. Advances in technology have allowed individual endurance athletes, sports teams, and physicians to monitor functional movements, workloads, and biometric markers to maximize performance and minimize injury. Movement sensors include pedometers, accelerometers/gyroscopes, and global positioning satellite (GPS) devices. Physiologic sensors include heart rate monitors, sleep monitors, temperature sensors, and integrated sensors. The purpose of this review is to familiarize health care professionals and team physicians with the various available types of wearable sensors, discuss their current utilization, and present future applications in sports medicine. Data were obtained from peer-reviewed literature through a search of the PubMed database. Included studies searched development, outcomes, and validation of wearable performance devices such as GPS, accelerometers, and physiologic monitors in sports. Clinical review. Level 4. Wearable sensors provide a method of monitoring real-time physiologic and movement parameters during training and competitive sports. These parameters can be used to detect position-specific patterns in movement, design more efficient sports-specific training programs for performance optimization, and screen for potential causes of injury. More recent advances in movement sensors have improved accuracy in detecting high-acceleration movements during competitive sports. Wearable devices are valuable instruments for the improvement of sports performance. Evidence for use of these devices in professional sports is still limited. Future developments are needed to establish training protocols using data from wearable devices. © 2015 The Author(s).

Wearable Performance Devices in Sports Medicine

PubMed Central

Li, Ryan T.; Kling, Scott R.; Salata, Michael J.; Cupp, Sean A.; Sheehan, Joseph; Voos, James E.

2016-01-01

Context: Wearable performance devices and sensors are becoming more readily available to the general population and athletic teams. Advances in technology have allowed individual endurance athletes, sports teams, and physicians to monitor functional movements, workloads, and biometric markers to maximize performance and minimize injury. Movement sensors include pedometers, accelerometers/gyroscopes, and global positioning satellite (GPS) devices. Physiologic sensors include heart rate monitors, sleep monitors, temperature sensors, and integrated sensors. The purpose of this review is to familiarize health care professionals and team physicians with the various available types of wearable sensors, discuss their current utilization, and present future applications in sports medicine. Evidence Acquisition: Data were obtained from peer-reviewed literature through a search of the PubMed database. Included studies searched development, outcomes, and validation of wearable performance devices such as GPS, accelerometers, and physiologic monitors in sports. Study Design: Clinical review. Level of Evidence: Level 4. Results: Wearable sensors provide a method of monitoring real-time physiologic and movement parameters during training and competitive sports. These parameters can be used to detect position-specific patterns in movement, design more efficient sports-specific training programs for performance optimization, and screen for potential causes of injury. More recent advances in movement sensors have improved accuracy in detecting high-acceleration movements during competitive sports. Conclusion: Wearable devices are valuable instruments for the improvement of sports performance. Evidence for use of these devices in professional sports is still limited. Future developments are needed to establish training protocols using data from wearable devices. PMID:26733594

High to ultra-high power electrical energy storage.

PubMed

Sherrill, Stefanie A; Banerjee, Parag; Rubloff, Gary W; Lee, Sang Bok

2011-12-14

High power electrical energy storage systems are becoming critical devices for advanced energy storage technology. This is true in part due to their high rate capabilities and moderate energy densities which allow them to capture power efficiently from evanescent, renewable energy sources. High power systems include both electrochemical capacitors and electrostatic capacitors. These devices have fast charging and discharging rates, supplying energy within seconds or less. Recent research has focused on increasing power and energy density of the devices using advanced materials and novel architectural design. An increase in understanding of structure-property relationships in nanomaterials and interfaces and the ability to control nanostructures precisely has led to an immense improvement in the performance characteristics of these devices. In this review, we discuss the recent advances for both electrochemical and electrostatic capacitors as high power electrical energy storage systems, and propose directions and challenges for the future. We asses the opportunities in nanostructure-based high power electrical energy storage devices and include electrochemical and electrostatic capacitors for their potential to open the door to a new regime of power energy.

Development of low-cost technology for the next generation of high efficiency solar cells composed of earth abundant elements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agrawal, Rakesh

2014-09-28

The development of renewable, affordable, and environmentally conscious means of generating energy on a global scale represents a grand challenge of our time. Due to the “permanence” of radiation from the sun, solar energy promises to remain a viable and sustainable power source far into the future. Established single-junction photovoltaic technologies achieve high power conversion efficiencies (pce) near 20% but require complicated manufacturing processes that prohibit the marriage of large-scale throughput (e.g. on the GW scale), profitability, and quality control. Our approach to this problem begins with the synthesis of nanocrystals of semiconductor materials comprising earth abundant elements and characterizedmore » by material and optoelectronic properties ideal for photovoltaic applications, namely Cu2ZnSn(S,Se)4 (CZTSSe). Once synthesized, such nanocrystals are formulated into an ink, coated onto substrates, and processed into completed solar cells in such a way that enables scale-up to high throughput, roll-to-roll manufacturing processes. This project aimed to address the major limitation to CZTSSe solar cell pce’s – the low open-circuit voltage (Voc) reported throughout literature for devices comprised of this material. Throughout the project significant advancements have been made in fundamental understanding of the CZTSSe material and device limitations associated with this material system. Additionally, notable improvements have been made to our nanocrystal based processing technique to alleviate performance limitations due to the identified device limitations. Notably, (1) significant improvements have been made in reducing intra- and inter-nanoparticle heterogeneity, (2) improvements in device performance have been realized with novel cation substitution in Ge-alloyed CZTGeSSe absorbers, (3) systematic analysis of absorber sintering has been conducted to optimize the selenization process for large grain CZTSSe absorbers, (4) novel electrical characterization analysis techniques have been developed to identify significant limitations to traditional electrical characterization of CZTSSe devices, and (5) the developed electrical analysis techniques have been used to identify the role that band gap and electrostatic potential fluctuations have in limiting device performance for this material system. The device modeling and characterization of CZTSSe undertaken with this project have significant implications for the CZTSSe research community, as the identified limitations due to potential fluctuations are expected to be a performance limitation to high-efficiency CZTSSe devices fabricated from all current processing techniques. Additionally, improvements realized through enhanced absorber processing conditions to minimize nanoparticle and large-grain absorber heterogeneity are suggested to be beneficial processing improvements which should be applied to CZTSSe devices fabricated from all processing techniques. Ultimately, our research has indicated that improved performance for CZTSSe will be achieved through novel absorber processing which minimizes defect formation, elemental losses, secondary phase formation, and compositional uniformity in CZTSSe absorbers; we believe this novel absorber processing can be achieved through nanocrystal based processing of CZTSSe which is an active area of research at the conclusion of this award. While significant fundamental understanding of CZTSSe and the performance limitations associated with this material system, as well as notable improvements in the processing of nanocrystal based CZTSSe absorbers, have been achieved under this project, the limitation of two years of research funding towards our goals prevents further significant advancements directly identified through pce. improvements relative to those reported herein. As the characterization and modeling subtask of this project has been the main driving force for understanding device limitations, the conclusions of this analysis have just recently been applied to the processing of nanocrystal based CZTSSe absorbers -- with notable success. We expect the notable fundamental understanding of device limitations and absorber sintering achieved under this project will lead to significant improvements in device performance for CZTSSe devices in the near future for devices fabricated from a variety of processing techniques« less

The impact of rare earth cobalt permanent magnets on electromechanical device design

NASA Technical Reports Server (NTRS)

Fisher, R. L.; Studer, P. A.

1979-01-01

Specific motor designs which employ rare earth cobalt magnets are discussed with special emphasis on their unique properties and magnetic field geometry. In addition to performance improvements and power savings, high reliability devices are attainable. Both the mechanism and systems engineering should be aware of the new performance levels which are currently becoming available as a result of the rare earth cobalt magnets.

Semiconductor Materials for High Frequency Solid State Sources.

DTIC Science & Technology

1985-01-18

saturation on near and submicron-scale device performance. The motivation for this is as follows: Presently, individual semiconductors are accepted or...basis of all FET scaling procedures; and is a major motivating factor for going to submicron structures. This scaling was tested with the 4 following...performance. The motivation for this is as follows: Presently, individual semiconductors are accepted or rejected as candidate device materials based, in

Coating and Patterning Functional Materials for Large Area Electrofluidic Arrays

PubMed Central

Wu, Hao; Tang, Biao; Hayes, Robert A.; Dou, Yingying; Guo, Yuanyuan; Jiang, Hongwei; Zhou, Guofu

2016-01-01

Industrialization of electrofluidic devices requires both high performance coating laminates and efficient material utilization on large area substrates. Here we show that screen printing can be effectively used to provide homogeneous pin-hole free patterned amorphous fluoropolymer dielectric layers to provide both the insulating and fluidic reversibility required for devices. Subsequently, we over-coat photoresist using slit coating on this normally extremely hydrophobic layer. In this way, we are able to pattern the photoresist by conventional lithography to provide the chemical contrast required for liquids dosing by self-assembly and highly-reversible electrofluidic switching. Materials, interfacial chemistry, and processing all contribute to the provision of the required engineered substrate properties. Coating homogeneity as characterized by metrology and device performance data are used to validate the methodology, which is well-suited for transfer to high volume production in existing LCD cell-making facilities. PMID:28773826

Coating and Patterning Functional Materials for Large Area Electrofluidic Arrays.

PubMed

Wu, Hao; Tang, Biao; Hayes, Robert A; Dou, Yingying; Guo, Yuanyuan; Jiang, Hongwei; Zhou, Guofu

2016-08-19

Industrialization of electrofluidic devices requires both high performance coating laminates and efficient material utilization on large area substrates. Here we show that screen printing can be effectively used to provide homogeneous pin-hole free patterned amorphous fluoropolymer dielectric layers to provide both the insulating and fluidic reversibility required for devices. Subsequently, we over-coat photoresist using slit coating on this normally extremely hydrophobic layer. In this way, we are able to pattern the photoresist by conventional lithography to provide the chemical contrast required for liquids dosing by self-assembly and highly-reversible electrofluidic switching. Materials, interfacial chemistry, and processing all contribute to the provision of the required engineered substrate properties. Coating homogeneity as characterized by metrology and device performance data are used to validate the methodology, which is well-suited for transfer to high volume production in existing LCD cell-making facilities.

Commercialized VCSEL components fabricated at TrueLight Corporation

NASA Astrophysics Data System (ADS)

Pan, Jin-Shan; Lin, Yung-Sen; Li, Chao-Fang A.; Chang, C. H.; Wu, Jack; Lee, Bor-Lin; Chuang, Y. H.; Tu, S. L.; Wu, Calvin; Huang, Kai-Feng

2001-05-01

TrueLight Corporation was found in 1997 and it is the pioneer of VCSEL components supplier in Taiwan. We specialize in the production and distribution of VCSEL (Vertical Cavity Surface Emitting Laser) and other high-speed PIN-detector devices and components. Our core technology is developed to meet blooming demand of fiber optic transmission. Our intention is to diverse the device application into data communication, telecommunication and industrial markets. One mission is to provide the high performance, highly reliable and low-cost VCSEL components for data communication and sensing applications. For the past three years, TrueLight Corporation has entered successfully into the Gigabit Ethernet and the Fiber Channel data communication area. In this paper, we will focus on the fabrication of VCSEL components. We will present you the evolution of implanted and oxide-confined VCSEL process, device characterization, also performance in Gigabit data communication and the most important reliability issue

High-intensity pulse light sintering of silver nanowire transparent films on polymer substrates: the effect of the thermal properties of substrates on the performance of silver films.

PubMed

Jiu, Jinting; Sugahara, Tohru; Nogi, Masaya; Araki, Teppei; Suganuma, Katsuaki; Uchida, Hiroshi; Shinozaki, Kenji

2013-12-07

Silver nanowire (AgNW) films with a random mesh structure have attracted considerable attention as high-performance flexible transparent electrodes that can replace the expensive and brittle ITO-sputtered films widely used in displays, touch screens, and solar cells. Methods such as heating, pressure treatment, and light treatment are usually used to obtain an optically transparent and electrically conductive film comparable to those of commercial ITO. However, the adhesion between the AgNW film and the substrate is so weak that other overcoatings or extra treatments are necessary. Here, a high-intensity pulsed light (HIPL) sintering technique was developed to rapidly and simply sinter the AgNW film and thus achieve strong adhesion and even high conductivity on these flexible polymer substrates which will be widely applied to the printing of electronic devices. The conductivity of the AgNW film closely depended on the thermal performance of substrates, and the adhesion was determined by the soft state of the substrate surface originating from the glass transition or melting of substrates with light intensity. The rapid sintering technique can be popularized to fabricate new devices on these polymer substrates by considering the thermal properties of the substrate to improve the performance of devices.

CSP: A Multifaceted Hybrid Architecture for Space Computing

NASA Technical Reports Server (NTRS)

Rudolph, Dylan; Wilson, Christopher; Stewart, Jacob; Gauvin, Patrick; George, Alan; Lam, Herman; Crum, Gary Alex; Wirthlin, Mike; Wilson, Alex; Stoddard, Aaron

2014-01-01

Research on the CHREC Space Processor (CSP) takes a multifaceted hybrid approach to embedded space computing. Working closely with the NASA Goddard SpaceCube team, researchers at the National Science Foundation (NSF) Center for High-Performance Reconfigurable Computing (CHREC) at the University of Florida and Brigham Young University are developing hybrid space computers that feature an innovative combination of three technologies: commercial-off-the-shelf (COTS) devices, radiation-hardened (RadHard) devices, and fault-tolerant computing. Modern COTS processors provide the utmost in performance and energy-efficiency but are susceptible to ionizing radiation in space, whereas RadHard processors are virtually immune to this radiation but are more expensive, larger, less energy-efficient, and generations behind in speed and functionality. By featuring COTS devices to perform the critical data processing, supported by simpler RadHard devices that monitor and manage the COTS devices, and augmented with novel uses of fault-tolerant hardware, software, information, and networking within and between COTS devices, the resulting system can maximize performance and reliability while minimizing energy consumption and cost. NASA Goddard has adopted the CSP concept and technology with plans underway to feature flight-ready CSP boards on two upcoming space missions.

Integrated micro thermoelectric cooler: Theory, fabrication and characterization

NASA Astrophysics Data System (ADS)

da Silva, Luciana Wasnievski

The flows of heat and electricity in a column-type micro thermoelectric (TE) cooler that uses telluride compounds for the n- and p-type elements, are analyzed by modeling the various interfacial resistances. Electron (barrier tunneling) and phonon (diffuse mismatch) boundary resistances at the TE/metal interface, and thermal non-equilibrium between electrons and phonons adjacent to this interface (cooling length), increase the thermal conduction resistance and decrease the Seebeck coefficient of the TE elements. These in turn reduce the device cooling performance, which is also affected by the thermal and electrical contact resistances at the TE/metal and the metal/electrical-insulator interfaces. From the device optimization, it is predicted (for an available voltage of 3 V) that a micro TE cooler with 50 TE pairs (Bi2Te3 and Sb2Te3 high performance TE films), column thickness of 4 mum (limited by the current fabrication process), and column cross-section area of 7 mum x 7 mum, should produce a temperature drop of 10 K with a cooling load of 10 mW. This device will operate with a current of 11 mA and will require a power of 34 mW. The coefficient of performance is 0.3. Co-evaporated Bi-Te and Sb-Te films were fabricated at various deposition conditions (evaporation rate of individual species and substrate temperature), and their TE properties (Seebeck coefficient, electrical resistivity, and carrier concentration) were measured, in search of optimal TE performance. The deposition rates were controlled such that the tellurium atomic composition changed from 48 to 74%, and the substrate temperature ranged from 130 to 300°C. The chemical composition and crystal structure of the films were recorded (using a microprobe and a X-ray diffractomer, respectively), analyzed, and compared with standard Bi2Te3 and Sb2Te 3 single crystal samples. High performance TE films had a tellurium atomic concentration around 60% and were deposited at a substrate temperature between 260 and 270°C. Due to degradation of the photoresist used for patterning the TE films, in the first-generation device, they were deposited with a maximum substrate temperature of 130°C. The TE columns were connected using Cr/Au/Ti/Pt layers at the hot junctions, and Cr/Au layers at the cold junctions. A device with 60 TE pairs and column width of 40 mum (finer device structures had limited yield) was tested using infrared thermometry. The average cooling achieved was about 1 K, which was close to the predicted value. A future-generation device is proposed, where high performance TE films can be patterned with optimized geometries (high density micro TE coolers), allowing these devices to fulfill the requirements for a wireless environmental monitor application.

Next-Generation Multifunctional Electrochromic Devices.

PubMed

Cai, Guofa; Wang, Jiangxin; Lee, Pooi See

2016-08-16

The rational design and exploration of electrochromic devices will find a wide range of applications in smart windows for energy-efficient buildings, low-power displays, self-dimming rear mirrors for automobiles, electrochromic e-skins, and so on. Electrochromic devices generally consist of multilayer structures with transparent conductors, electrochromic films, ion conductors, and ion storage films. Synthetic strategies and new materials for electrochromic films and transparent conductors, comprehensive electrochemical kinetic analysis, and novel device design are areas of active study worldwide. These are believed to be the key factors that will help to significantly improve the electrochromic performance and extend their application areas. In this Account, we present our strategies to design and fabricate electrochromic devices with high performance and multifunctionality. We first describe the synthetic strategies, in which a porous tungsten oxide (WO3) film with nearly ideal optical modulation and fast switching was prepared by a pulsed electrochemical deposition method. Multiple strategies, such as sol-gel/inkjet printing methods, hydrothermal/inkjet printing methods, and a novel hybrid transparent conductor/electrochromic layer have been developed to prepare high-performance electrochromic films. We then summarize the recent advances in transparent conductors and ion conductor layers, which play critial roles in electrochromic devices. Benefiting from the developments of soft transparent conductive substrates, highly deformable electrochromic devices that are flexible, foldable, stretchable, and wearable have been achieved. These emerging devices have great potential in applications such as soft displays, electrochromic e-skins, deformable electrochromic films, and so on. We finally present a concept of multifunctional smart glass, which can change its color to dynamically adjust the daylight and solar heat input of the building or protect the users' privacy during the daytime. Energy can also be stored in the smart windows during the daytime simultaneously and be discharged for use in the evening. These results reveal that the electrochromic devices have potential applications in a wide range of areas. We hope that this Account will promote further efforts toward fundamental research on electrochromic materials and the development of new multifunctional electrochromic devices to meet the growing demands for next-generation electronic systems.

Return of neonatal CPAP resistance - the Medijet device family examined using in vitro flow simulations.

PubMed

Falk, Markus; Donaldsson, Snorri; Jonsson, Baldvin; Drevhammar, Thomas

2017-11-01

Medijet nasal continuous positive airway pressure (CPAP) generators are a family of devices developed from the Benveniste valve. Previous studies have shown that the in vitro performance of the Medijet disposable generator was similar to the Neopuff resistor system. We hypothesised that resistance would be the main mechanism of CPAP generation in the Medijet disposable generator. The in vitro performance of the Medijet reusable and disposable systems, the Neopuff resistor system and the Benveniste and Infant Flow nonresistor systems were investigated using static and dynamic bench tests. Large differences in performance were found between the different systems. The disposable Medijet demonstrated high resistance, low pressure stability and high imposed work of breathing. The results also showed that encapsulating the Benveniste valve changed it into a resistor system. The main mechanism of CPAP generation for the disposable Medijet generator was resistance. The Medijet device family showed increasing resistance with each design generation. The high resistance of the Medijet disposable generator could be of great value when examining the clinical importance of pressure stability. Our results suggest that this device should be used cautiously in patients where pressure-stable CPAP is believed to be clinically important. ©2017 Foundation Acta Paediatrica. Published by John Wiley & Sons Ltd.

Micro-opto-mechanical devices and systems using epitaxial lift off

NASA Technical Reports Server (NTRS)

Camperi-Ginestet, C.; Kim, Young W.; Wilkinson, S.; Allen, M.; Jokerst, N. M.

1993-01-01

The integration of high quality, single crystal thin film gallium arsenide (GaAs) and indium phosphide (InP) based photonic and electronic materials and devices with host microstructures fabricated from materials such as silicon (Si), glass, and polymers will enable the fabrication of the next generation of micro-opto-mechanical systems (MOMS) and optoelectronic integrated circuits. Thin film semiconductor devices deposited onto arbitrary host substrates and structures create hybrid (more than one material) near-monolithic integrated systems which can be interconnected electrically using standard inexpensive microfabrication techniques such as vacuum metallization and photolithography. These integrated systems take advantage of the optical and electronic properties of compound semiconductor devices while still using host substrate materials such as silicon, polysilicon, glass and polymers in the microstructures. This type of materials optimization for specific tasks creates higher performance systems than those systems which must use trade-offs in device performance to integrate all of the function in a single material system. The low weight of these thin film devices also makes them attractive for integration with micromechanical devices which may have difficulty supporting and translating the full weight of a standard device. These thin film devices and integrated systems will be attractive for applications, however, only when the development of low cost, high yield fabrication and integration techniques makes their use economically feasible. In this paper, we discuss methods for alignment, selective deposition, and interconnection of thin film epitaxial GaAs and InP based devices onto host substrates and host microstructures.

Electronic adherence monitoring device performance and patient acceptability: a randomized control trial.

PubMed

Chan, Amy Hai Yan; Stewart, Alistair William; Harrison, Jeff; Black, Peter Nigel; Mitchell, Edwin Arthur; Foster, Juliet Michelle

2017-05-01

To investigate the performance and patient acceptability of an inhaler electronic monitoring device in a real-world childhood asthma population. Children 6 to 15 years presenting with asthma to the hospital emergency department and prescribed inhaled corticosteroids were included. Participants were randomized to receive a device with reminder features enabled or disabled for use with their preventer. Device quality control tests were conducted. Questionnaires on device acceptability, utility and ergonomics were completed at six months. A total of 1306 quality control tests were conducted; 84% passed pre-issue and 87% return testing. The most common failure reason was actuation under-recording. Acceptability scores were high, with higher scores in the reminder than non-reminder group (median, 5 th -95 th percentile: 4.1, 3.1-5.0 versus 3.7, 2.3-4.8; p < 0.001). Most (>90%) rated the device easy to use. Feedback was positive across five themes: device acceptability, ringtone acceptability, suggestions for improvement, effect on medication use, and effect on asthma control. This study investigates electronic monitoring device performance and acceptability in children using quantitative and qualitative measures. Results indicate satisfactory reliability, although failure rates of 13-16% indicate the importance of quality control. Favorable acceptability ratings support the use of these devices in children.

International Conference on the Mechanical Technology of Inertial Devices, University of Newcastle-upon-Tyne, England, Apr. 7-9, 1987, Proceedings

NASA Astrophysics Data System (ADS)

Various papers on the mechanical technology of inertial devices are presented. The topics addressed include: development of a directional gyroscope for remotely piloted vehicles and similar applications; a two-degree-of-freedom gyroscope with frictionless inner and outer gimbal pickoffs; oscillogyro design, manufacture, and performance; development of miniature two-axis rate gyroscope; mechanical design aspects of the electrostatically suspended gyroscope; role of gas-lubricated bearings in current and future sensors; development of a new microporous retainer material for precision ball bearings; design study for a high-stability, large-centrifuge test bed; evaluation of a two-axis rate gyro; operating principles of a two-axis angular rate transducer; and nutation frequency analysis. Also considered are: triaxial laser gyro; mechanical design considerations for a ring laser gyro dither mechanism; environmental considerations in the design of fiberoptic gyroscopes; manufacturing aspects of some critical high-precision mechanical components of inertial devices; dynamics and control of a gyroscopic force measurement system; high precision and high performance motion systems; use of multiple acceleration references to obtain high precision centrifuge data at low cost; gyro testing and evaluation at the Communications Research Centre; review of the mechanical design and development of a high-performance accelerometer; and silicon microengineering for accelerometers.

Silicon Germanium Strained Layers and Heterostructures

NASA Astrophysics Data System (ADS)

Willander, M.; Nur, O.; Jain, S. C.

2004-01-01

The integration of strained-Si1 xGex into Si technology has enhanced the performance and extended the functionality of Si based circuits. The improvement of device performance is observed in both AC as well as DC characteristics of these devices. The category of such devices includes field effect as well as bipolar families. Speed performance in some based circuits has reached limits previously dominated by III-V heterostructures based devices. In addition, for some optoelectronics applications including photodetectors it is now possible to easily integrate strained-Si1 xGex based optical devices into standard Silicon technology. The impact of integrating strained and relaxed Si1 xGex alloys into Si technology is important. It has lead to stimulate Si research as well as offers easy options for performances that requires very complicated and costly process if pure Si has to be used. In this paper we start by discussing the strain and stability of Si1 xGex alloys. The origin and the process responsible for transient enhanced diffusion (TED) in highly doped Si containing layers will be mentioned. Due to the importance of TED for thin highly doped Boron strained-Si1 xGex layers and its degrading consequences, possible suppression design methods will be presented. Quantum well pchannel MOSFETs (QW-PMOSFETs) based on thin buried QW are solution to the low speed and weak current derivability. Different aspects of designing these devices for a better performance are briefly reviewed. Other FETs based on tensile strained Si on relaxed Si1 xGex for n-channel and modulation doped field effect transistors (MODFETs) showed excellent performance. Record AC performance well above 200GHz for fmax is already observed and this record is expected to increase in the coming years. Heterojunction bipolar transistors (HPTs) with thin strained-Si1 xGex highly doped base have lead to optimize the performance of the bipolar technology for many applications easily. The strategies of design and the most important designs of HBTs for optimum AC as well as DC are discussed in details. This technology is now mature enough and that is manifested in the appearance in the market nowadays. Si1 xGex based FETs circuits compatible with standard Si CMOS processes are soon expected to appear in the market. Finally, we briefly discuss the recent advances in Si1 xGex based infrared photodetectors.

Co-scheduling of network resource provisioning and host-to-host bandwidth reservation on high-performance network and storage systems

DOEpatents

Yu, Dantong; Katramatos, Dimitrios; Sim, Alexander; Shoshani, Arie

2014-04-22

A cross-domain network resource reservation scheduler configured to schedule a path from at least one end-site includes a management plane device configured to monitor and provide information representing at least one of functionality, performance, faults, and fault recovery associated with a network resource; a control plane device configured to at least one of schedule the network resource, provision local area network quality of service, provision local area network bandwidth, and provision wide area network bandwidth; and a service plane device configured to interface with the control plane device to reserve the network resource based on a reservation request and the information from the management plane device. Corresponding methods and computer-readable medium are also disclosed.

Evaluation of the leap motion controller as a new contact-free pointing device.

PubMed

Bachmann, Daniel; Weichert, Frank; Rinkenauer, Gerhard

2014-12-24

This paper presents a Fitts' law-based analysis of the user's performance in selection tasks with the Leap Motion Controller compared with a standard mouse device. The Leap Motion Controller (LMC) is a new contact-free input system for gesture-based human-computer interaction with declared sub-millimeter accuracy. Up to this point, there has hardly been any systematic evaluation of this new system available. With an error rate of 7.8% for the LMC and 2.8% for the mouse device, movement times twice as large as for a mouse device and high overall effort ratings, the Leap Motion Controller's performance as an input device for everyday generic computer pointing tasks is rather limited, at least with regard to the selection recognition provided by the LMC.

Evaluation of the Leap Motion Controller as a New Contact-Free Pointing Device

PubMed Central

Bachmann, Daniel; Weichert, Frank; Rinkenauer, Gerhard

2015-01-01

This paper presents a Fitts' law-based analysis of the user's performance in selection tasks with the Leap Motion Controller compared with a standard mouse device. The Leap Motion Controller (LMC) is a new contact-free input system for gesture-based human-computer interaction with declared sub-millimeter accuracy. Up to this point, there has hardly been any systematic evaluation of this new system available. With an error rate of 7.8 % for the LMC and 2.8% for the mouse device, movement times twice as large as for a mouse device and high overall effort ratings, the Leap Motion Controller's performance as an input device for everyday generic computer pointing tasks is rather limited, at least with regard to the selection recognition provided by the LMC. PMID:25609043

Enhanced performance of wearable piezoelectric nanogenerator fabricated by two-step hydrothermal process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiu, Yu; Lei, Jixue; Yin, Bing

2014-03-17

A simple two-step hydrothermal process was proposed for enhancing the performance of the nanogenerator on flexible and wearable terylene-fabric substrate. With this method, a significant enhancement in output voltage of the nanogenerator from ∼10 mV to 7 V was achieved, comparing with the one by conventional one-step process. In addition, another advantage with the devices synthesized by two-step hydrothermal process was that their output voltages are only sensitive to strain rather than strain rate. The devices with a high output voltage have the ability to power common electric devices and will have important applications in flexible electronics and wearable devices.

Functional Epitaxial Oxide Devices

DTIC Science & Technology

2010-04-12

complex oxides , epitaxial growth, antennas, varactors 16. SECURITY CLASSIFICATION OF: REPORT U b. ABSTRACT u c. THIS PAGE u 17. LIMITATION OF...Technical Report DATES COVERED (From - To) 17-06-2008-31-12-2009 4. TITLE AND SUBTITLE Functional Epitaxial Oxide Devices 5a. CONTRACT NUMBER NA...This research effort addresses the need for high performance radio frequency (RF) components, specifically varactors and miniaturized, high gain

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Deen, David A.; Miller, Ross A.; Osinsky, Andrei V.; Downey, Brian P.; Storm, David F.; Meyer, David J.; Scott Katzer, D.; Nepal, Neeraj

2016-12-01

A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG) channels are utilized such that the top 2DEG serves as an equipotential that screens potential fluctuations resulting from surface trapped charge. The bottom channel serves as the transistor's modulated channel. Two device modeling approaches have been performed as a means to guide the device design and to elucidate the relationship between the design and performance metrics. The modeling efforts include a self-consistent Poisson-Schrodinger solution for electrostatic simulation as well as hydrodynamic three-dimensional device modeling for three-dimensional electrostatics, steady-state, and transient simulations. Experimental results validated the HEMT design whereby homo-epitaxial growth on free-standing GaN substrates and fabrication of the same-wafer dual-channel and recessed-gate AlN/GaN HEMTs have been demonstrated. Notable pulsed-gate performance has been achieved by the fabricated HEMTs through a gate lag ratio of 0.86 with minimal drain current collapse while maintaining high levels of dc and rf performance.

Unraveling the High Open Circuit Voltage and High Performance of Integrated Perovskite/Organic Bulk-Heterojunction Solar Cells.

PubMed

Dong, Shiqi; Liu, Yongsheng; Hong, Ziruo; Yao, Enping; Sun, Pengyu; Meng, Lei; Lin, Yuze; Huang, Jinsong; Li, Gang; Yang, Yang

2017-08-09

We have demonstrated high-performance integrated perovskite/bulk-heterojunction (BHJ) solar cells due to the low carrier recombination velocity, high open circuit voltage (V OC ), and increased light absorption ability in near-infrared (NIR) region of integrated devices. In particular, we find that the V OC of the integrated devices is dominated by (or pinned to) the perovskite cells, not the organic photovoltaic cells. A Quasi-Fermi Level Pinning Model was proposed to understand the working mechanism and the origin of the V OC of the integrated perovskite/BHJ solar cell, which following that of the perovskite solar cell and is much higher than that of the low bandgap polymer based organic BHJ solar cell. Evidence for the model was enhanced by examining the charge carrier behavior and photovoltaic behavior of the integrated devices under illumination of monochromatic light-emitting diodes at different characteristic wavelength. This finding shall pave an interesting possibility for integrated photovoltaic devices to harvest low energy photons in NIR region and further improve the current density without sacrificing V OC , thus providing new opportunities and significant implications for future industry applications of this kind of integrated solar cells.

Highly Flexible Self-Powered Organolead Trihalide Perovskite Photodetectors with Gold Nanowire Networks as Transparent Electrodes.

PubMed

Bao, Chunxiong; Zhu, Weidong; Yang, Jie; Li, Faming; Gu, Shuai; Wang, Yangrunqian; Yu, Tao; Zhu, Jia; Zhou, Yong; Zou, Zhigang

2016-09-14

Organolead trihalide perovskites (OTPs) such as CH3NH3PbI3 (MAPbI3) have attracted much attention as the absorbing layer in solar cells and photodetectors (PDs). Flexible OTP devices have also been developed. Transparent electrodes (TEs) with higher conductivity, stability, and flexibility are necessary to improve the performance and flexibility of flexible OTP devices. In this work, patterned Au nanowire (AuNW) networks with high conductivity and stability are prepared and used as TEs in self-powered flexible MAPbI3 PDs. These flexible PDs show peak external quantum efficiency and responsivity of 60% and 321 mA/W, which are comparable to those of MAPbI3 PDs based on ITO TEs. The linear dynamic range and response time of the AuNW-based flexible PDs reach ∼84 dB and ∼4 μs, respectively. Moreover, they show higher flexibility than ITO-based devices, around 90%, and 60% of the initial photocurrent can be retained for the AuNW-based flexible PDs when bent to radii of 2.5 and 1.5 mm. This work suggests a high-performance, highly flexible, and stable TE for OTP flexible devices.

Performance of an extended dynamic range time delay integration charge coupled device (XDR TDI CCD) for high-intrascene dynamic range scanning

NASA Astrophysics Data System (ADS)

Levine, Peter A.; Dawson, Robin M.; Andrews, James T.; Bhaskaran, Mahalingham; Furst, David; Hsueh, Fu-Lung; Meray, Grazyna M.; Sudol, Thomas M.; Swain, Pradyumna K.; Tower, John R.

2003-05-01

Many applications, such as industrial inspection and overhead reconnaissance benefit from line scanning architectures where time delay integration (TDI) significantly improves sensitivity. CCDs are particularly well suited to the TDI architecture since charge is transferred virtually noiselessly down the column. Sarnoff's TDI CCDs have demonstrated extremely high speeds where a 7200 x 64, 8 um pixel device with 120 output ports demonstrated a vertical line transfer rate greater than 800 kHz. The most recent addition to Sarnoff's TDI technology is the implementation of extended dynamic range (XDR) in high speed, back illuminated TDI CCDs. The optical, intrascene dynamic range can be adjusted in the design of the imager with measured dynamic ranges exceeding 2,000,000:1 with no degradation in low light performance. The device provides a piecewise linear response to light where multiple slopes and break points can be set during the CCD design. A description of the device architecture and measured results from fabricated XDR TDI CCDs are presented.

Enhancing analog performance and suppression of subthreshold swing using hetero-junctionless double gate TFETs

NASA Astrophysics Data System (ADS)

Chauhan, Sudakar Singh; Sharma, Neha

2017-12-01

This paper proposes hetero-junctionless double gate tunnel field effect transistor (HJLDG-TFETs) for suppression of subthreshold swing (SS) using an InAs compound semiconductor material. The proposed device with high dielectric material, gives an excellent performance when InAs uses at source side. Because of low band gap of 0.36 eV , it reduces the potential barrier height of source channel interface causing higher band to band tunneling. Whereas, Si at the drain side with higher band gap of 1.12 eV , increasing the barrier height of drain channel interface causing lower quantum tunneling. As a result, the proposed device with high-k (HfO2) at 30 nm channel section provides a tremendous characteristics with high ION /IOFF ratio of 2 ×1011 , a point SS of 43.30 mV / decade and moderate SS of 56.75 mV / decade . All the above results show that the proposed device is assured for a low power switching application. The variation in gate supply voltage also analyzed for transconductance property of the device.

Processing and Characterization of Thin Cadmium Telluride Solar Cells

NASA Astrophysics Data System (ADS)

Wojtowicz, Anna

Cadmium telluride (CdTe) has the highest theoretical limit to conversion efficiency of single-junction photovoltaic (PV) technologies today. However, despite a maximum theoretical open-circuit voltage of 1.20 V, record devices have historically had voltages pinned around only 900 mV. Voltage losses due to high recombination rates remains to be the most complex hurdle to CdTe technology today, and the subject of on-going research in the physics PV group at Colorado State University. In this work, an ultrathin CdTe device architecture is proposed in an effort to reduce bulk recombination and boost voltages. By thinning the CdTe layer, a device's internal electric field extends fully towards the back contact. This quickly separates electrons-hole pairs throughout the bulk of the device and reduces overall recombination. Despite this advantage, very thin CdTe layers also present a unique set of optical and electrical challenges which result in performance losses not as prevalent in thicker devices. When fabricating CdTe solar cells, post-deposition treatments applied to the absorber layer are a critical step for achieving high efficiency devices. Exposure of the polycrystalline CdTe film to a chlorine species encourages the passivation of dangling bonds and larger grain formation, while copper-doping improves device uniformity and voltages. This work focuses on experiments conducted via close-space sublimation to optimize CdCl2 and CuCl treatments for thin CdTe solar cells. Sweeps of both exposure and anneal time were performed for both post-deposition treatments on CdTe devices with 1.0 mum absorber layers. The results demonstrate that thin CdTe devices require substantially less post-deposition processing than standard thicker devices as expected. Additionally, the effects of CdTe growth temperature on thin devices is briefly investigated. The results suggest that higher growth temperatures lead to both electrical and stoichiometric changes in CdTe closely associated with lower carrier lifetimes and poorer overall performance.

Highly Crystalline C8-BTBT Thin-Film Transistors by Lateral Homo-Epitaxial Growth on Printed Templates.

PubMed

Janneck, Robby; Pilet, Nicolas; Bommanaboyena, Satya Prakash; Watts, Benjamin; Heremans, Paul; Genoe, Jan; Rolin, Cedric

2017-11-01

Highly crystalline thin films of organic semiconductors offer great potential for fundamental material studies as well as for realizing high-performance, low-cost flexible electronics. The fabrication of these films directly on inert substrates is typically done by meniscus-guided coating techniques. The resulting layers show morphological defects that hinder charge transport and induce large device-to-device variability. Here, a double-step method for organic semiconductor layers combining a solution-processed templating layer and a lateral homo-epitaxial growth by a thermal evaporation step is reported. The epitaxial regrowth repairs most of the morphological defects inherent to meniscus-guided coatings. The resulting film is highly crystalline and features a mobility increased by a factor of three and a relative spread in device characteristics improved by almost half an order of magnitude. This method is easily adaptable to other coating techniques and offers a route toward the fabrication of high-performance, large-area electronics based on highly crystalline thin films of organic semiconductors. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tackling Energy Loss for High-Efficiency Organic Solar Cells with Integrated Multiple Strategies.

PubMed

Zuo, Lijian; Shi, Xueliang; Jo, Sae Byeok; Liu, Yun; Lin, Fracis; Jen, Alex K-Y

2018-04-01

Limited by the various inherent energy losses from multiple channels, organic solar cells show inferior device performance compared to traditional inorganic photovoltaic techniques, such as silicon and CuInGaSe. To alleviate these fundamental limitations, an integrated multiple strategy is implemented including molecular design, interfacial engineering, optical manipulation, and tandem device construction into one cell. Considering the close correlation among these loss channels, a sophisticated quantification of energy-loss reduction is tracked along with each strategy in a perspective to reach rational overall optimum. A novel nonfullerene acceptor, 6TBA, is synthesized to resolve the thermalization and V OC loss, and another small bandgap nonfullerene acceptor, 4TIC, is used in the back sub-cell to alleviate transmission loss. Tandem architecture design significantly reduces the light absorption loss, and compensates carrier dynamics and thermalization loss. Interfacial engineering further reduces energy loss from carrier dynamics in the tandem architecture. As a result of this concerted effort, a very high power conversion efficiency (13.20%) is obtained. A detailed quantitative analysis on the energy losses confirms that the improved device performance stems from these multiple strategies. The results provide a rational way to explore the ultimate device performance through molecular design and device engineering. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

pHEMA Encapsulated PEDOT-PSS-CNT Microsphere Microelectrodes for Recording Single Unit Activity in the Brain

PubMed Central

Castagnola, Elisa; Maggiolini, Emma; Ceseracciu, Luca; Ciarpella, Francesca; Zucchini, Elena; De Faveri, Sara; Fadiga, Luciano; Ricci, Davide

2016-01-01

The long-term reliability of neural interfaces and stability of high-quality recordings are still unsolved issues in neuroscience research. High surface area PEDOT-PSS-CNT composites are able to greatly improve the performance of recording and stimulation for traditional intracortical metal microelectrodes by decreasing their impedance and increasing their charge transfer capability. This enhancement significantly reduces the size of the implantable device though preserving excellent electrical performances. On the other hand, the presence of nanomaterials often rises concerns regarding possible health hazards, especially when considering a clinical application of the devices. For this reason, we decided to explore the problem from a new perspective by designing and testing an innovative device based on nanostructured microspheres grown on a thin tether, integrating PEDOT-PSS-CNT nanocomposites with a soft synthetic permanent biocompatible hydrogel. The pHEMA hydrogel preserves the electrochemical performance and high quality recording ability of PEDOT-PSS-CNT coated devices, reduces the mechanical mismatch between soft brain tissue and stiff devices and also avoids direct contact between the neural tissue and the nanocomposite, by acting as a biocompatible protective barrier against potential nanomaterial detachment. Moreover, the spherical shape of the electrode together with the surface area increase provided by the nanocomposite deposited on it, maximize the electrical contact and may improve recording stability over time. These results have a good potential to contribute to fulfill the grand challenge of obtaining stable neural interfaces for long-term applications. PMID:27147944

Ultra high voltage MOS controlled 4H-SiC power switching devices

NASA Astrophysics Data System (ADS)

Ryu, S.; Capell, C.; Van Brunt, E.; Jonas, C.; O'Loughlin, M.; Clayton, J.; Lam, K.; Pala, V.; Hull, B.; Lemma, Y.; Lichtenwalner, D.; Zhang, Q. J.; Richmond, J.; Butler, P.; Grider, D.; Casady, J.; Allen, S.; Palmour, J.; Hinojosa, M.; Tipton, C. W.; Scozzie, C.

2015-08-01

Ultra high voltage (UHV, >15 kV) 4H-silicon carbide (SiC) power devices have the potential to significantly improve the system performance, reliability, and cost of energy conversion systems by providing reduced part count, simplified circuit topology, and reduced switching losses. In this paper, we compare the two MOS based UHV 4H-SiC power switching devices; 15 kV 4H-SiC MOSFETs and 15 kV 4H-SiC n-IGBTs. The 15 kV 4H-SiC MOSFET shows a specific on-resistance of 204 mΩ cm2 at 25 °C, which increased to 570 mΩ cm2 at 150 °C. The 15 kV 4H-SiC MOSFET provides low, temperature-independent, switching losses which makes the device more attractive for applications that require higher switching frequencies. The 15 kV 4H-SiC n-IGBT shows a significantly lower forward voltage drop (VF), along with reasonable switching performance, which make it a very attractive device for high voltage applications with lower switching frequency requirements. An electrothermal analysis showed that the 15 kV 4H-SiC n-IGBT outperforms the 15 kV 4H-SiC MOSFET for applications with switching frequencies of less than 5 kHz. It was also shown that the use of a carrier storage layer (CSL) can significantly improve the conduction performance of the 15 kV 4H-SiC n-IGBTs.

A High-Performance Optical Memory Array Based on Inhomogeneity of Organic Semiconductors.

PubMed

Pei, Ke; Ren, Xiaochen; Zhou, Zhiwen; Zhang, Zhichao; Ji, Xudong; Chan, Paddy Kwok Leung

2018-03-01

Organic optical memory devices keep attracting intensive interests for diverse optoelectronic applications including optical sensors and memories. Here, flexible nonvolatile optical memory devices are developed based on the bis[1]benzothieno[2,3-d;2',3'-d']naphtho[2,3-b;6,7-b']dithiophene (BBTNDT) organic field-effect transistors with charge trapping centers induced by the inhomogeneity (nanosprouts) of the organic thin film. The devices exhibit average mobility as high as 7.7 cm 2 V -1 s -1 , photoresponsivity of 433 A W -1 , and long retention time for more than 6 h with a current ratio larger than 10 6 . Compared with the standard floating gate memory transistors, the BBTNDT devices can reduce the fabrication complexity, cost, and time. Based on the reasonable performance of the single device on a rigid substrate, the optical memory transistor is further scaled up to a 16 × 16 active matrix array on a flexible substrate with operating voltage less than 3 V, and it is used to map out 2D optical images. The findings reveal the potentials of utilizing [1]benzothieno[3,2-b][1]benzothiophene (BTBT) derivatives as organic semiconductors for high-performance optical memory transistors with a facile structure. A detailed study on the charge trapping mechanism in the derivatives of BTBT materials is also provided, which is closely related to the nanosprouts formed inside the organic active layer. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Performance enhancement of GaN ultraviolet avalanche photodiodes with p-type δ-doping

NASA Astrophysics Data System (ADS)

Bayram, C.; Pau, J. L.; McClintock, R.; Razeghi, M.

2008-06-01

High quality δ-doped p-GaN is used as a means of improving the performance of back-illuminated GaN avalanche photodiodes (APDs). Devices with δ-doped p-GaN show consistently lower leakage current and lower breakdown voltage than those with bulk p-GaN. APDs with δ-doped p-GaN also achieve a maximum multiplication gain of 5.1×104, more than 50 times higher than that obtained in devices with bulk p-GaN. The better device performance of APDs with δ-doped p-GaN is attributed to the higher structural quality of the p-GaN layer achieved via δ-doping.

Towards highly stable polymer electronics (Conference Presentation)

NASA Astrophysics Data System (ADS)

Nikolka, Mark; Nasrallah, Iyad; Broch, Katharina; Sadhanala, Aditya; Hurhangee, Michael; McCulloch, Iain; Sirringhaus, Henning

2016-11-01

Due to their ease of processing, organic semiconductors are promising candidates for applications in high performance flexible displays and fast organic electronic circuitry. Recently, a lot of advances have been made on organic semiconductors exhibiting surprisingly high performance and carrier mobilities exceeding those of amorphous silicon. However, there remain significant concerns about their operational and environmental stability, particularly in the context of applications that require a very high level of threshold voltage stability, such as active-matrix addressing of organic light-emitting diode (OLED) displays. Here, we report a novel technique for dramatically improving the operational stress stability, performance and uniformity of high mobility polymer field-effect transistors by the addition of specific small molecule additives to the polymer semiconductor film. We demonstrate for the first time polymer FETs that exhibit stable threshold voltages with threshold voltage shifts of less than 1V when subjected to a constant current operational stress for 1 day under conditions that are representative for applications in OLED active matrix displays. The approach constitutes in our view a technological breakthrough; it also makes the device characteristics independent of the atmosphere in which it is operated, causes a significant reduction in contact resistance and significantly improves device uniformity. We will discuss in detail the microscopic mechanism by which the molecular additives lead to this significant improvement in device performance and stability.

Characterization of Novel Materials with Very Low Secondary Electron Emission Yield for Use in High-Power Microwave Devices

NASA Astrophysics Data System (ADS)

Svimonishvili, Tengiz; Zameroski, Nathan; Gilmore, Mark; Schamiloglu, Edl; Gaudet, John; Yan, Lincan

2004-11-01

Secondary Electron Emission (SEE) results from bombarding materials with electrons, atoms, or ions. The amount of secondary emission depends on factors such as bulk and surface properties of materials, energy of incident particles, and their angle of incidence. Total secondary electron emission yield, defined as the number of secondary electrons ejected per primary electron, is an important material parameter. Materials with high yield find use, for instance, in photomultiplier tubes, whereas materials with low yield, such as graphite, are used for SEE suppression in high-power microwave devices. The lower the SEE yield, the better the performance of high-power microwave devices (for example, gyrotrons). Employing a low-energy electron gun (energy range from 5 eV to 2000 eV), our work aims at characterizing and eventually identifying novel materials (with the lowest possible SEE yield) that will enhance operation and efficiency of high-power microwave devices.

High performance InP JFETs grown by MOCVD using tertiarybutylphosphine

NASA Astrophysics Data System (ADS)

Hashemi, M. M.; Shealy, J. B.; Corvini, P. J.; Denbaars, S. P.; Mishra, U. K.

1994-02-01

Indium phosphide channel junction field effect transistors were fabricated by metalorganic chemical vapor deposition using tertiarybulylphosphine (TBP) as the alternative source for phosphine. At growth temperatures of 600°C, InP with specular surface morphology and mobilities as high as 61000 cm2/V s at 77Khas been achieved using trimethylindium and TBP. To improve device isolation, pinch-off characteristics, and output transconductance, we employ a high resistivity (1 × 108 Ω-cm) semi-insulating InP buffer layer using ferrocene as the Fe-dopant. Devices with gate lengths of 1 urn exhibit very high extrinsic transconductance of 130 mS/mm, gate-drain breakdown voltage exceeding 20 V, maximum current density of >450 mA/mm with record high fT and fmax of 15 GHz and 35 GHz, respectively. These results indicate: that InP JFETs are promising electronic devices for microwave power amplification, and that TBP is capable of device quality materials.

Characterization of ultrafast devices using novel optical techniques

NASA Astrophysics Data System (ADS)

Ali, Md Ershad

Optical techniques have been extensively used to examine the high frequency performance of a number of devices including High Electron Mobility Transistors (HEMTs), Heterojunction Bipolar Phototransistors (HPTs) and Low Temperature GaAs (LT-GaAs) Photoconductive Switches. To characterize devices, frequency and time domain techniques, namely optical heterodyning and electro-optic sampling, having measurement bandwidths in excess of 200 GHz, were employed. Optical mixing in three-terminal devices has been extended for the first time to submillimeter wave frequencies. Using a new generation of 50-nm gate pseudomorphic InP-based HEMTs, optically mixed signals were detected to 552 GHz with a signal-to-noise ratio of approximately 5 dB. To the best of our knowledge, this is the highest frequency optical mixing obtained in three- terminal devices to date. A novel harmonic three-wave detection scheme was used for the detection of the optically generated signals. The technique involved downconversion of the signal in the device by the second harmonic of a gate-injected millimeter wave local oscillator. Measurements were also conducted up to 212 GHz using direct optical mixing and up to 382 GHz using a fundamental three-wave detection scheme. New interesting features in the bias dependence of the optically mixed signals have been reported. An exciting novel development from this work is the successful integration of near-field optics with optical heterodyning. The technique, called near-field optical heterodyning (NFOH), allows for extremely localized injection of high-frequency stimulus to any arbitrary point of an ultrafast device or circuit. Scanning the point of injection across the sample provides details of the high frequency operation of the device with high spatial resolution. For the implementation of the technique, fiber-optic probes with 100 nm apertures were fabricated. A feedback controlled positioning system was built for accurate placement and scanning of the fiber probe with nanometric precision. The applicability of the NFOH technique was first confirmed by measurements on heterojunction phototransistors at 100 GHz. Later NFOH scans were performed at 63 GHz on two other important devices, HEMTs and LT-GaAs Photoconductive Switches. Spatially resolved response characteristics of these devices revealed interesting details of their operation.

High temperature electrical energy storage: advances, challenges, and frontiers.

PubMed

Lin, Xinrong; Salari, Maryam; Arava, Leela Mohana Reddy; Ajayan, Pulickel M; Grinstaff, Mark W

2016-10-24

With the ongoing global effort to reduce greenhouse gas emission and dependence on oil, electrical energy storage (EES) devices such as Li-ion batteries and supercapacitors have become ubiquitous. Today, EES devices are entering the broader energy use arena and playing key roles in energy storage, transfer, and delivery within, for example, electric vehicles, large-scale grid storage, and sensors located in harsh environmental conditions, where performance at temperatures greater than 25 °C are required. The safety and high temperature durability are as critical or more so than other essential characteristics (e.g., capacity, energy and power density) for safe power output and long lifespan. Consequently, significant efforts are underway to design, fabricate, and evaluate EES devices along with characterization of device performance limitations such as thermal runaway and aging. Energy storage under extreme conditions is limited by the material properties of electrolytes, electrodes, and their synergetic interactions, and thus significant opportunities exist for chemical advancements and technological improvements. In this review, we present a comprehensive analysis of different applications associated with high temperature use (40-200 °C), recent advances in the development of reformulated or novel materials (including ionic liquids, solid polymer electrolytes, ceramics, and Si, LiFePO 4 , and LiMn 2 O 4 electrodes) with high thermal stability, and their demonstrative use in EES devices. Finally, we present a critical overview of the limitations of current high temperature systems and evaluate the future outlook of high temperature batteries with well-controlled safety, high energy/power density, and operation over a wide temperature range.

Collaborative designing and job satisfaction of airplane manufacturing engineers: A case study

NASA Astrophysics Data System (ADS)

Johnson, Michael David, Sr.

The group III-nitride system of materials has had considerable commercial success in recent years in the solid state lighting (SSL) and power electronics markets. The need for high efficient general lighting applications has driven research into InGaN based blue light emitting diodes (LEDs), and demand for more efficient power electronics for telecommunications has driven research into AlGaN based high electron mobility transistors (HEMTs). However, the group III-nitrides material properties make them attractive for several other applications that have not received as much attention. This work focuses on developing group III-nitride based devices for novel applications. GaN is a robust, chemically inert, piezoelectric material, making it an ideal candidate for surface acoustic wave (SAW) devices designed for high temperature and/or harsh environment sensors. In this work, SAW devices based on GaN are developed for use in high temperature gas or chemical sensor applications. To increase device sensitivity, while maintaining a simple one-step photolithography fabrication process, devices were designed to operate at high harmonic frequencies. This allows for GHz regime operation without sub-micron fabrication. One potential market for this technology is continuous emissions monitoring of combustion gas vehicles. In addition to SAW devices, high electron mobility transistors (HEMTs) were developed. The epitaxial structure was characterized and the 2-D electron gas concentrations were simulated and compared to experimental results. Device fabrication processes were developed and are outlined. Fabricated devices were electrically measured and device performance is discussed.

Ultra-slim flexible glass for roll-to-roll electronic device fabrication

NASA Astrophysics Data System (ADS)

Garner, Sean; Glaesemann, Scott; Li, Xinghua

2014-08-01

As displays and electronics evolve to become lighter, thinner, and more flexible, the choice of substrate continues to be critical to their overall optimization. The substrate directly affects improvements in the designs, materials, fabrication processes, and performance of advanced electronics. With their inherent benefits such as surface quality, optical transmission, hermeticity, and thermal and dimensional stability, glass substrates enable high-quality and long-life devices. As substrate thicknesses are reduced below 200 μm, ultra-slim flexible glass continues to provide these inherent benefits to high-performance flexible electronics such as displays, touch sensors, photovoltaics, and lighting. In addition, the reduction in glass thickness also allows for new device designs and high-throughput, continuous manufacturing enabled by R2R processes. This paper provides an overview of ultra-slim flexible glass substrates and how they enable flexible electronic device optimization. Specific focus is put on flexible glass' mechanical reliability. For this, a combination of substrate design and process optimizations has been demonstrated that enables R2R device fabrication on flexible glass. Demonstrations of R2R flexible glass processes such as vacuum deposition, photolithography, laser patterning, screen printing, slot die coating, and lamination have been made. Compatibility with these key process steps has resulted in the first demonstration of a fully functional flexible glass device fabricated completely using R2R processes.

A novel high-efficiency stable atmospheric microwave plasma device for fluid processing based on ridged waveguide

NASA Astrophysics Data System (ADS)

Xiao, Wei; Huang, Kama; He, Jianbo; Wu, Ying

2017-09-01

The waveguide-based microwave plasma device is widely used to generate atmospheric plasma for some industrial applications. Nevertheless, the traditional tapered waveguide device has limited power efficiency and produces unstable plasma. A novel ridged waveguide with an oblique hole is proposed to produce microwave atmospheric plasma for fluid processing. By using the ridged waveguide, the microwave field can be well focused, which can sustain plasma at relatively low power. Besides, an oblique hole is used to decrease the power reflection and generate a stable plasma torch especially in the case of high flowing rates. Experiments have been performed with the air flowing rates ranging from 500 l h-1 to 1000 l h-1 and the microwave working frequency of 2.45 GHz. The results show that in comparison with the conventional tapered waveguide, this novel device can both sustain plasma at relative low power and increase the power transfer efficiency by 11% from microwave to plasma. Moreover, both devices are used to process the waste gas-CO and CH4. Significantly, the removal efficiency for CO and CH4 can be increased by 19.7% and 32% respectively in the ridged waveguide compared with the tapered waveguide. It demonstrates that the proposed device possesses a great potential in industrial applications because of its high efficiency and stable performance.

Spatially Resolved Photoexcited Charge-Carrier Dynamics in Phase-Engineered Monolayer MoS 2

DOE PAGES

Yamaguchi, Hisato; Blancon, Jean-Christophe; Kappera, Rajesh; ...

2014-12-18

A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition metal dichalcogenides (TMDs) is crucial for its integration into high performance semiconductor devices. We investigate the transport properties of chemical vapor deposition (CVD) grown monolayer molybdenum disulfide (MoS 2) under photo-excitation using correlated scanning photocurrent microscopy and photoluminescence imaging. We examined the effect of local phase transformation underneath the metal electrodes on the generation of photocurrent across the channel length with diffraction-limited spatial resolution. While maximum photocurrent generation occurs at the Schottky contacts of semiconducting (2H-phase) MoS 2, after the metallic phase transformation (1T-phase), the photocurrent peak ismore » observed towards the center of the device channel, suggesting a strong reduction of native Schottky barriers. Analysis using the bias and position dependence of the photocurrent indicates that the Schottky barrier heights are few meV for 1T- and ~200 meV for 2H-contacted devices. We also demonstrate that a reduction of native Schottky barriers in a 1T device enhances the photo responsivity by more than one order of magnitude, a crucial parameter in achieving high performance optoelectronic devices. The obtained results pave a pathway for the fundamental understanding of intrinsic optoelectronic properties of atomically thin TMDs where Ohmic contacts are necessary for achieving high efficiency devices with low power consumption.« less

Metal-Phenolic Carbon Nanocomposites for Robust and Flexible Energy-Storage Devices.

PubMed

Oh, Jun Young; Jung, Yeonsu; Cho, Young Shik; Choi, Jaeyoo; Youk, Ji Ho; Fechler, Nina; Yang, Seung Jae; Park, Chong Rae

2017-04-22

Future electronics applications such as wearable electronics depend on the successful construction of energy-storage devices with superior flexibility and high electrochemical performance. However, these prerequisites are challenging to combine: External forces often cause performance degradation, whereas the trade-off between the required nanostructures for strength and electrochemical performance only results in diminished energy storage. Herein, a flexible supercapacitor based on tannic acid (TA) and carbon nanotubes (CNTs) with a unique nanostructure is presented. TA was self-assembled on the surface of the CNTs by metal-phenolic coordination bonds, which provides the hybrid film with both high strength and high pseudocapacitance. Besides 17-fold increased mechanical strength of the final composite, the hybrid film simultaneously exhibits excellent flexibility and volumetric capacitance. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-temperature electronics

NASA Technical Reports Server (NTRS)

Matus, Lawrence G.; Seng, Gary T.

1990-01-01

To meet the needs of the aerospace propulsion and space power communities, the high temperature electronics program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. This program supports a major element of the Center's mission - to perform basic and developmental research aimed at improving aerospace propulsion systems. Research is focused on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of SiC devices.

Material selection for climbing hardware using the example of a belay device

NASA Astrophysics Data System (ADS)

Semenov, E.; Schwanitz, S.; Odenwald, S.

2017-03-01

The aim of the research project was to design a novel climbing belay device. The present article describes the details of the therefor performed material selection. Literature research on the materials used in commercially available belay devices revealed a lack of definite information. Thus, a pilot x-ray fluorescence (XRF) test was performed on a small sample of common aluminium belay devices. It revealed the use of a variety of different alloy systems. The selection process continued by compiling a thorough list of constraints and objectives for this safety related piece of sports equipment. Different material options including non-aluminium-materials were discussed. The final material choice was a high strength aluminium alloy with a T6 thermal treatment. The device was designed and calculated by use of CAD and FEM software respectively, aiming to reduce weight. After manufacturing the strength, usability and friction properties of the device have been successfully tested.

Hybrid Power Management (HPM)

NASA Technical Reports Server (NTRS)

Eichenberg, Dennis J.

2007-01-01

The NASA Glenn Research Center s Avionics, Power and Communications Branch of the Engineering and Systems Division initiated the Hybrid Power Management (HPM) Program for the GRC Technology Transfer and Partnership Office. HPM is the innovative integration of diverse, state-of-the-art power devices in an optimal configuration for space and terrestrial applications. The appropriate application and control of the various power devices significantly improves overall system performance and efficiency. The advanced power devices include ultracapacitors and fuel cells. HPM has extremely wide potential. Applications include power generation, transportation systems, biotechnology systems, and space power systems. HPM has the potential to significantly alleviate global energy concerns, improve the environment, and stimulate the economy. One of the unique power devices being utilized by HPM for energy storage is the ultracapacitor. An ultracapacitor is an electrochemical energy storage device, which has extremely high volumetric capacitance energy due to high surface area electrodes, and very small electrode separation. Ultracapacitors are a reliable, long life, maintenance free, energy storage system. This flexible operating system can be applied to all power systems to significantly improve system efficiency, reliability, and performance. There are many existing and conceptual applications of HPM.

Efficiency enhancement in DIBSQ:PC71BM organic photovoltaic cells by using Liq-doped Bphen as a cathode buffer layer

NASA Astrophysics Data System (ADS)

Chen, Guo; Si, Changfeng; Zhang, Pengpeng; Guo, Kunping; Pan, Saihu; Zhu, Wenqing; Wei, Bin

2017-09-01

We have improved the photovoltaic performance of 2,4-bis[4-(N,Ndiisobutylamino)- 2,6-dihydroxyphenyl] squaraine:[6,6]-phenyl C71-butyric acid methyl ester (DIBSQ:PC71BM) organic photovoltaic (OPV) cells via incorporating Liq-doped Bphen (Bphen-Liq) as a cathode buffer layer (CBL). Based on the Bphen-Liq CBL, a DIBSQ:PC71BM OPV cell possessed an optimal power conversion efficiency of 4.90%, which was 13% and 60% higher than those of the devices with neat Bphen as CBL and without CBL, respectively. The enhancement of the device performance could be attributed to the enhanced electron mobility and improved electrode/active layer contact and thus the improved photocurrent extraction by incorporating the Bphen-Liq CBL. Light-intensity dependent device performance analysis indicates that the incorporating of the Bphen-Liq CBL can remarkably improve the charge transport of the DIBSQ:PC71BM OPV cell and thus decrease the recombination losses of the device, resulting in enhanced device performance. Our finding indicates that the doped Bphen-Liq CBL has great potential for high-performance solution-processed small-molecule OPVs.

An evaluation of strain measuring devices for ceramic composites

NASA Technical Reports Server (NTRS)

Gyekenyesi, John Z.; Bartolotta, Paul A.

1991-01-01

A series of tensile tests was conducted on SiC/reaction bonded silicon nitrides (RBSN) composites using different methods of strain measurement. The tests were used to find the optimum strain sensing device for use with continuous fiber reinforced ceramic matrix composites in ambient and high temperature environments. Bonded resistance gages were found to offer excellent performance for room temperature tests. The clip-on gage offers the same performance, but less time is required for mounting it to the specimen. Low contact force extensometers track the strain with acceptable results at high specimen temperatures. Silicon carbide rods with knife edges are preferred. The edges must be kept sharp. The strain measuring devices should be mounted on the flat side of the specimen. This is in contrast to mounting on the rough thickness side.

An evaluation of strain measuring devices for ceramic composites

NASA Technical Reports Server (NTRS)

Gyekenyesi, John Z.; Bartolotta, Paul A.

1992-01-01

A series of tensile tests were conducted on SiC/RBSN composites using different methods of strain measurement. The tests were used to find the optimum strain sensing device for use with continuous fiber reinforced ceramic matrix composites in ambient and high temperature environments. Bonded resistance strain gages were found to offer excellent performance for room temperature tests. The clip-on gage offers the same performance but significantly less time is required for mounting it to the specimen. Low contact force extensometers track the strain with acceptable results at high specimen temperatures. Silicon carbide rods with knife edges are preferred. The edges must be kept sharp. The strain measuring devices should be mounted on the flat side of the specimen. This is in contrast to mounting on the rough thickness side.

Milking performance evaluation and factors affecting milking claw vacuum levels with flow simulator.

PubMed

Enokidani, Masafumi; Kawai, Kazuhiro; Shinozuka, Yasunori; Watanabe, Aiko

2017-08-01

Milking performance of milking machines that matches the production capability of dairy cows is important in reducing the risk of mastitis, particularly in high-producing cows. This study used a simulated milking device to examine the milking performance of the milking system of 73 dairy farms and to analyze the factors affecting claw vacuum. Mean claw vacuum and range of fluctuation of claw vacuum (claw vacuum range) were measured at three different flow rates: 5.7, 7.6 and 8.7 kg/min. At the highest flow rate, only 16 farms (21.9%) met both standards of mean claw vacuum ≥35 kPa and claw vacuum range ≤ 7 kPa, showing that milking systems currently have poor milking performance. The factors affecting mean claw vacuum were claw type, milk-meter and vacuum shut-off device; the factor affecting claw vacuum range was claw type. Examination of the milking performance of the milking system using a simulated milking device allows an examination of the performance that can cope with high producing cows, indicating the possibility of reducing the risk of mastitis caused by inappropriate claw vacuum. © 2016 Japanese Society of Animal Science.

Growth of carbon nanotubes on fully processed silicon-on-insulator CMOS substrates.

PubMed

Haque, M Samiul; Ali, S Zeeshan; Guha, P K; Oei, S P; Park, J; Maeng, S; Teo, K B K; Udrea, F; Milne, W I

2008-11-01

This paper describes the growth of Carbon Nanotubes (CNTs) both aligned and non-aligned on fully processed CMOS substrates containing high temperature tungsten metallization. While the growth method has been demonstrated in fabricating CNT gas sensitive layers for high temperatures SOI CMOS sensors, it can be employed in a variety of applications which require the use of CNTs or other nanomaterials with CMOS electronics. In our experiments we have grown CNTs both on SOI CMOS substrates and SOI CMOS microhotplates (suspended on membranes formed by post-CMOS deep RIE etching). The fully processed SOI substrates contain CMOS devices and circuits and additionally, some wafers contained high current LDMOSFETs and bipolar structures such as Lateral Insulated Gate Bipolar Transistors. All these devices were used as test structures to investigate the effect of additional post-CMOS processing such as CNT growth, membrane formation, high temperature annealing, etc. Electrical characterisation of the devices with CNTs were performed along with SEM and Raman spectroscopy. The CNTs were grown both at low and high temperatures, the former being compatible with Aluminium metallization while the latter being possible through the use of the high temperature CMOS metallization (Tungsten). In both cases we have found that there is no change in the electrical behaviour of the CMOS devices, circuits or the high current devices. A slight degradation of the thermal performance of the CMOS microhotplates was observed due to the extra heat dissipation path created by the CNT layers, but this is expected as CNTs exhibit a high thermal conductance. In addition we also observed that in the case of high temperature CNT growth a slight degradation in the manufacturing yield was observed. This is especially the case where large area membranes with a diameter in excess of 500 microns are used.

Deposition SnO(2)/nitrogen-doped graphene nanocomposites on the separator: a new type of flexible electrode for energy storage devices.

PubMed

Liang, Junfei; Cai, Zhi; Tian, Yu; Li, Lidong; Geng, Jianxin; Guo, Lin

2013-11-27

It is currently very urgent to develop flexible energy storage devices because of the growing academic interest in and strong technical demand of flexible electronics. Exploration of high-performance electrode materials and a corresponding assembly method for fabrication of flexible energy storage devices plays a critical role in fulfilling this demand. Here, we have developed a facile, economic, and green hydrothermal process to synthesize ultrasmall SnO2 nanocrystallites/nitrogen-doped graphene nanocomposites (USNGs) as a high-performance electrode material for Li-ion batteries (LIBs). Furthermore, using the glass microfiber filters (GMFs) as supporting substrate, the novel flexible USNG-GMF bilayered films have been prepared by depositing the as-prepared USNG on GMF through a simple vacuum filtration. Significantly, for the first time, the flexible USNG-GMF bilayered films have directly been used for assembling LIBs, where the GMF further functions as a separator. The obtained highly robust, binder-free, conducting agent-free, and current collector-free new type of flexible electrodes show excellent LIB performance.

Exciton delocalization incorporated drift-diffusion model for bulk-heterojunction organic solar cells

NASA Astrophysics Data System (ADS)

Wang, Zi Shuai; Sha, Wei E. I.; Choy, Wallace C. H.

2016-12-01

Modeling the charge-generation process is highly important to understand device physics and optimize power conversion efficiency of bulk-heterojunction organic solar cells (OSCs). Free carriers are generated by both ultrafast exciton delocalization and slow exciton diffusion and dissociation at the heterojunction interface. In this work, we developed a systematic numerical simulation to describe the charge-generation process by a modified drift-diffusion model. The transport, recombination, and collection of free carriers are incorporated to fully capture the device response. The theoretical results match well with the state-of-the-art high-performance organic solar cells. It is demonstrated that the increase of exciton delocalization ratio reduces the energy loss in the exciton diffusion-dissociation process, and thus, significantly improves the device efficiency, especially for the short-circuit current. By changing the exciton delocalization ratio, OSC performances are comprehensively investigated under the conditions of short-circuit and open-circuit. Particularly, bulk recombination dependent fill factor saturation is unveiled and understood. As a fundamental electrical analysis of the delocalization mechanism, our work is important to understand and optimize the high-performance OSCs.

Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials

NASA Astrophysics Data System (ADS)

Ilatikhameneh, Hesameddin; Tan, Yaohua; Novakovic, Bozidar; Klimeck, Gerhard; Rahman, Rajib; Appenzeller, Joerg

2015-12-01

In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of TFETs is their low ON-currents. 2D material based TFETs can have tight gate control and high electric fields at the tunnel junction, and can in principle generate high ON-currents along with a sub-threshold swing smaller than 60 mV/dec. Our simulations reveal that high performance TMD TFETs, not only require good gate control, but also rely on the choice of the right channel material with optimum band gap, effective mass and source/drain doping level. Unlike previous works, a full band atomistic tight binding method is used self-consistently with 3D Poisson equation to simulate ballistic quantum transport in these devices. The effect of the choice of TMD material on the performance of the device and its transfer characteristics are discussed. Moreover, the criteria for high ON-currents are explained with a simple analytic model, showing the related fundamental factors. Finally, the subthreshold swing and energy-delay of these TFETs are compared with conventional CMOS devices.

An Electrochemical Capacitor with Applicable Energy Density of 7.4 Wh/kg at Average Power Density of 3000 W/kg.

PubMed

Zhai, Teng; Lu, Xihong; Wang, Hanyu; Wang, Gongming; Mathis, Tyler; Liu, Tianyu; Li, Cheng; Tong, Yexiang; Li, Yat

2015-05-13

Electrochemical capacitors represent a new class of charge storage devices that can simultaneously achieve high energy density and high power density. Previous reports have been primarily focused on the development of high performance capacitor electrodes. Although these electrodes have achieved excellent specific capacitance based on per unit mass of active materials, the gravimetric energy densities calculated based on the weight of entire capacitor device were fairly small. This is mainly due to the large mass ratio between current collector and active material. We aimed to address this issue by a 2-fold approach of minimizing the mass of current collector and increasing the electrode performance. Here we report an electrochemical capacitor using 3D graphene hollow structure as current collector, vanadium sulfide and manganese oxide as anode and cathode materials, respectively. 3D graphene hollow structure provides a lightweight and highly conductive scaffold for deposition of pseudocapacitive materials. The device achieves an excellent active material ratio of 24%. Significantly, it delivers a remarkable energy density of 7.4 Wh/kg (based on the weight of entire device) at the average power density of 3000 W/kg. This is the highest gravimetric energy density reported for asymmetric electrochemical capacitors at such a high power density.

High-Performance Phototransistors Based on PDIF-CN2 Solution-Processed Single Fiber and Multifiber Assembly.

PubMed

Rekab, Wassima; Stoeckel, Marc-Antoine; El Gemayel, Mirella; Gobbi, Marco; Orgiu, Emanuele; Samorì, Paolo

2016-04-20

Here we describe the fabrication of organic phototransistors based on either single or multifibers integrated in three-terminal devices. These self-assembled fibers have been produced by solvent-induced precipitation of an air stable and solution-processable perylene di-imide derivative, i.e., PDIF-CN2. The optoelectronic properties of these devices were compared to devices incorporating more disordered spin-coated PDIF-CN2 thin-films. The single-fiber devices revealed significantly higher field-effect mobilities, compared to multifiber and thin-films, exceeding 2 cm(2) V(-1) s(-1). Such an efficient charge transport is the result of strong intermolecular coupling between closely packed PDIF-CN2 molecules and of a low density of structural defects. The improved crystallinity allows efficient collection of photogenerated Frenkel excitons, which results in the highest reported responsivity (R) for single-fiber PDI-based phototransistors, and photosensitivity (P) exceeding 2 × 10(3) AW(-1), and 5 × 10(3), respectively. These findings provide unambiguous evidence for the key role played by the high degree of order at the supramolecular level to leverage the material's properties toward the fabrication of light-sensitive organic field-effect transistors combining a good operational stability, high responsivity and photosensitivity. Our results show also that the air-stability performances are superior in devices where highly crystalline supramolecularly engineered architectures serve as the active layer.

Imaging visible light with Medipix2.

PubMed

Mac Raighne, Aaron; Brownlee, Colin; Gebert, Ulrike; Maneuski, Dzmitry; Milnes, James; O'Shea, Val; Rügheimer, Tilman K

2010-11-01

A need exists for high-speed single-photon counting optical imaging detectors. Single-photon counting high-speed detection of x rays is possible by using Medipix2 with pixelated silicon photodiodes. In this article, we report on a device that exploits the Medipix2 chip for optical imaging. The fabricated device is capable of imaging at >3000 frames/s over a 256×256 pixel matrix. The imaging performance of the detector device via the modulation transfer function is measured, and the presence of ion feedback and its degradation of the imaging properties are discussed.

NOVEL NANOPARTICULATE CATALYSTS FOR IMPROVED VOC TREATMENT DEVICES - PHASE I

EPA Science Inventory

Catalytic oxidation of VOCs is increasingly used for treatment of large-volume emissions at relatively dilute VOC levels. The best performing catalytic oxidation devices for attainment of very high VOC destruction levels employ precious metal catalysts, the costs of which a...

Environmental considerations for application of high Tc superconductors in space

NASA Technical Reports Server (NTRS)

Carlberg, I. A.; Kelliher, W. C.; Wise, S. A.; Hooker, M. W.; Buckley, J. D.

1993-01-01

The impact of the environmental factors on the performance of the superconductive devices during spaceflight missions is reviewed. Specific factors typical of spaceflight are addressed to evaluate superconductive devices for space-based applications including preflight storage, radiation, vibration, and thermal cycling.

Thermoelectric devices and applications for the same

DOEpatents

DeSteese, John G [Kennewick, WA; Olsen, Larry C [Richland, WA; Martin, Peter M [Kennewick, WA

2010-12-14

High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.

Thermoelectric devices and applications for the same

DOEpatents

Olsen, Larry C.; DeSteese, John G.; Martin, Peter M.; Johnston, John W.; Peters, Timothy J.

2016-03-08

High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.

Design of precise assembly equipment of large aperture optics

NASA Astrophysics Data System (ADS)

Pei, Guoqing; Xu, Xu; Xiong, Zhao; Yan, Han; Qin, Tinghai; Zhou, Hai; Yuan, Xiaodong

2017-05-01

High-energy solid-state laser is an important way to achieve laser fusion research. Laser fusion facility includes thousands of various types of large aperture optics. These large aperture optics should be assembled with high precision and high efficiency. Currently, however, the assembly of large aperture optics is by man's hand which is in low level of efficiency and labor-intensive. Here, according to the characteristics of the assembly of large aperture optics, we designed three kinds of grasping devices. Using Finite Element Method, we simulated the impact of the grasping device on the PV value and the RMS value of the large aperture optics. The structural strength of the grasping device's key part was analyzed. An experiment was performed to illustrate the reliability and precision of the grasping device. We anticipate that the grasping device would complete the assembly of large aperture optics precisely and efficiently.

Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

NASA Astrophysics Data System (ADS)

Su, Ming; Chen, Chingchi; Rajan, Siddharth

2013-07-01

GaN, a wide bandgap semiconductor successfully implemented in optical and high-speed electronic devices, has gained momentum in recent years for power electronics applications. Along with rapid progress in material and device processing technologies, high-voltage transistors over 600 V have been reported by a number of teams worldwide. These advances make GaN highly attractive for the growing market of electrified vehicles, which currently employ bipolar silicon devices in the 600-1200 V class for the traction inverter. However, to capture this billion-dollar power market, GaN has to compete with existing IGBT products and deliver higher performance at comparable or lower cost. This paper reviews key achievements made by the GaN semiconductor industry, requirements of the automotive electric drive system and remaining challenges for GaN power devices to fit in the inverter application of hybrid vehicles.

High thermal stability fluorene-based hole-injecting material for organic light-emitting devices

NASA Astrophysics Data System (ADS)

Li, Lu; Jiao, Bo; Li, Sanfeng; Ma, Lin; Yu, Yue; Wu, Zhaoxin

2016-03-01

Novel N1,N3,N5-tris(9,9-diphenyl-9H-fluroen-2-yl)-N1,N3,N5-triphenylbenzene-1,3,5-triamine (TFADB) was synthesized and characterized as a hole-injecting material (HIM) for organic light-emitting devices (OLEDs). By incorporating fluorene group TFADB shows a high glass-transition temperature Tg > 168 °C, indicative of excellent thermal stability. TFADB-based devices exhibited the highest performance in terms of the maximum current efficiency (6.0 cd/A), maximum power efficiency (4.0 lm/W), which is improved than that of the standard device based on 4-4‧-4″Tris(N-(naphthalene-2-yl)-N-phenyl-amino)triphenylamine (2T-NATA) (5.2 cd/A, 3.6 lm/W). This material could be a promising hole-injecting material, especially for the high temperature applications of OLEDs and other organic electronic devices.

Disposable photonic integrated circuits for evanescent wave sensors by ultra-high volume roll-to-roll method.

PubMed

Aikio, Sanna; Hiltunen, Jussi; Hiitola-Keinänen, Johanna; Hiltunen, Marianne; Kontturi, Ville; Siitonen, Samuli; Puustinen, Jarkko; Karioja, Pentti

2016-02-08

Flexible photonic integrated circuit technology is an emerging field expanding the usage possibilities of photonics, particularly in sensor applications, by enabling the realization of conformable devices and introduction of new alternative production methods. Here, we demonstrate that disposable polymeric photonic integrated circuit devices can be produced in lengths of hundreds of meters by ultra-high volume roll-to-roll methods on a flexible carrier. Attenuation properties of hundreds of individual devices were measured confirming that waveguides with good and repeatable performance were fabricated. We also demonstrate the applicability of the devices for the evanescent wave sensing of ambient refractive index. The production of integrated photonic devices using ultra-high volume fabrication, in a similar manner as paper is produced, may inherently expand methods of manufacturing low-cost disposable photonic integrated circuits for a wide range of sensor applications.

High-performance green flexible electronics based on biodegradable cellulose nanofibril paper

PubMed Central

Jung, Yei Hwan; Chang, Tzu-Hsuan; Zhang, Huilong; Yao, Chunhua; Zheng, Qifeng; Yang, Vina W.; Mi, Hongyi; Kim, Munho; Cho, Sang June; Park, Dong-Wook; Jiang, Hao; Lee, Juhwan; Qiu, Yijie; Zhou, Weidong; Cai, Zhiyong; Gong, Shaoqin; Ma, Zhenqiang

2015-01-01

Today's consumer electronics, such as cell phones, tablets and other portable electronic devices, are typically made of non-renewable, non-biodegradable, and sometimes potentially toxic (for example, gallium arsenide) materials. These consumer electronics are frequently upgraded or discarded, leading to serious environmental contamination. Thus, electronic systems consisting of renewable and biodegradable materials and minimal amount of potentially toxic materials are desirable. Here we report high-performance flexible microwave and digital electronics that consume the smallest amount of potentially toxic materials on biobased, biodegradable and flexible cellulose nanofibril papers. Furthermore, we demonstrate gallium arsenide microwave devices, the consumer wireless workhorse, in a transferrable thin-film form. Successful fabrication of key electrical components on the flexible cellulose nanofibril paper with comparable performance to their rigid counterparts and clear demonstration of fungal biodegradation of the cellulose-nanofibril-based electronics suggest that it is feasible to fabricate high-performance flexible electronics using ecofriendly materials. PMID:26006731

High-performance green flexible electronics based on biodegradable cellulose nanofibril paper.

PubMed

Jung, Yei Hwan; Chang, Tzu-Hsuan; Zhang, Huilong; Yao, Chunhua; Zheng, Qifeng; Yang, Vina W; Mi, Hongyi; Kim, Munho; Cho, Sang June; Park, Dong-Wook; Jiang, Hao; Lee, Juhwan; Qiu, Yijie; Zhou, Weidong; Cai, Zhiyong; Gong, Shaoqin; Ma, Zhenqiang

2015-05-26

Today's consumer electronics, such as cell phones, tablets and other portable electronic devices, are typically made of non-renewable, non-biodegradable, and sometimes potentially toxic (for example, gallium arsenide) materials. These consumer electronics are frequently upgraded or discarded, leading to serious environmental contamination. Thus, electronic systems consisting of renewable and biodegradable materials and minimal amount of potentially toxic materials are desirable. Here we report high-performance flexible microwave and digital electronics that consume the smallest amount of potentially toxic materials on biobased, biodegradable and flexible cellulose nanofibril papers. Furthermore, we demonstrate gallium arsenide microwave devices, the consumer wireless workhorse, in a transferrable thin-film form. Successful fabrication of key electrical components on the flexible cellulose nanofibril paper with comparable performance to their rigid counterparts and clear demonstration of fungal biodegradation of the cellulose-nanofibril-based electronics suggest that it is feasible to fabricate high-performance flexible electronics using ecofriendly materials.

High-performance green flexible electronics based on biodegradable cellulose nanofibril paper

NASA Astrophysics Data System (ADS)

Jung, Yei Hwan; Chang, Tzu-Hsuan; Zhang, Huilong; Yao, Chunhua; Zheng, Qifeng; Yang, Vina W.; Mi, Hongyi; Kim, Munho; Cho, Sang June; Park, Dong-Wook; Jiang, Hao; Lee, Juhwan; Qiu, Yijie; Zhou, Weidong; Cai, Zhiyong; Gong, Shaoqin; Ma, Zhenqiang

2015-05-01

Today's consumer electronics, such as cell phones, tablets and other portable electronic devices, are typically made of non-renewable, non-biodegradable, and sometimes potentially toxic (for example, gallium arsenide) materials. These consumer electronics are frequently upgraded or discarded, leading to serious environmental contamination. Thus, electronic systems consisting of renewable and biodegradable materials and minimal amount of potentially toxic materials are desirable. Here we report high-performance flexible microwave and digital electronics that consume the smallest amount of potentially toxic materials on biobased, biodegradable and flexible cellulose nanofibril papers. Furthermore, we demonstrate gallium arsenide microwave devices, the consumer wireless workhorse, in a transferrable thin-film form. Successful fabrication of key electrical components on the flexible cellulose nanofibril paper with comparable performance to their rigid counterparts and clear demonstration of fungal biodegradation of the cellulose-nanofibril-based electronics suggest that it is feasible to fabricate high-performance flexible electronics using ecofriendly materials.

Multimode quantum interference of photons in multiport integrated devices

PubMed Central

Peruzzo, Alberto; Laing, Anthony; Politi, Alberto; Rudolph, Terry; O'Brien, Jeremy L.

2011-01-01

Photonics is a leading approach in realizing future quantum technologies and recently, optical waveguide circuits on silicon chips have demonstrated high levels of miniaturization and performance. Multimode interference (MMI) devices promise a straightforward implementation of compact and robust multiport circuits. Here, we show quantum interference in a 2×2 MMI coupler with visibility of V=95.6±0.9%. We further demonstrate the operation of a 4×4 port MMI device with photon pairs, which exhibits complex quantum interference behaviour. We have developed a new technique to fully characterize such multiport devices, which removes the need for phase-sensitive measurements and may find applications for a wide range of photonic devices. Our results show that MMI devices can operate in the quantum regime with high fidelity and promise substantial simplification and concatenation of photonic quantum circuits. PMID:21364563

High-power LED light sources for optical measurement systems operated in continuous and overdriven pulsed modes

NASA Astrophysics Data System (ADS)

Stasicki, Bolesław; Schröder, Andreas; Boden, Fritz; Ludwikowski, Krzysztof

2017-06-01

The rapid progress of light emitting diode (LED) technology has recently resulted in the availability of high power devices with unprecedented light emission intensities comparable to those of visible laser light sources. On this basis two versatile devices have been developed, constructed and tested. The first one is a high-power, single-LED illuminator equipped with exchangeable projection lenses providing a homogenous light spot of defined diameter. The second device is a multi-LED illuminator array consisting of a number of high-power LEDs, each integrated with a separate collimating lens. These devices can emit R, G, CG, B, UV or white light and can be operated in pulsed or continuous wave (CW) mode. Using an external trigger signal they can be easily synchronized with cameras or other devices. The mode of operation and all parameters can be controlled by software. Various experiments have shown that these devices have become a versatile and competitive alternative to laser and xenon lamp based light sources. The principle, design, achieved performances and application examples are given in this paper.

Clinical Evidence Supporting US Food and Drug Administration Premarket Approval of High-Risk Otolaryngologic Devices, 2000-2014.

PubMed

Rathi, Vinay K; Wang, Bo; Ross, Joseph S; Downing, Nicholas S; Kesselheim, Aaron S; Gray, Stacey T

2017-02-01

The US Food and Drug Administration (FDA) approves high-risk medical devices based on premarket pivotal clinical studies demonstrating reasonable assurance of safety and effectiveness and may require postapproval studies (PAS) to further inform benefit-risk assessment. We conducted a cross-sectional analysis using publicly available FDA documents to characterize industry-sponsored pivotal studies and PAS of high-risk devices used in the treatment of otolaryngologic diseases. Between 2000 and 2014, the FDA approved 23 high-risk otolaryngologic devices based on 28 pivotal studies. Median enrollment was 118 patients (interquartile range, 67-181), and median duration of longest primary effectiveness end point follow-up was 26 weeks (interquartile range, 16-96). Fewer than half were randomized (n = 13, 46%), blinded (n = 12, 43%), or controlled (n = 10, 36%). The FDA required 23 PASs for 16 devices (70%): almost two-thirds (n = 15, 65%) monitored long-term performance, and roughly one-third (n = 8, 35%) focused on subgroups. Otolaryngologists should be aware of limitations in the strength of premarket evidence when considering the use of newly approved devices.

Silicon-On-Insulator (SOI) Devices and Mixed-Signal Circuits for Extreme Temperature Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

2008-01-01

Electronic systems in planetary exploration missions and in aerospace applications are expected to encounter extreme temperatures and wide thermal swings in their operational environments. Electronics designed for such applications must, therefore, be able to withstand exposure to extreme temperatures and to perform properly for the duration of the missions. Electronic parts based on silicon-on-insulator (SOI) technology are known, based on device structure, to provide faster switching, consume less power, and offer better radiation-tolerance compared to their silicon counterparts. They also exhibit reduced current leakage and are often tailored for high temperature operation. However, little is known about their performance at low temperature. The performance of several SOI devices and mixed-signal circuits was determined under extreme temperatures, cold-restart, and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of these devices for use in space exploration missions under extreme temperatures. The experimental results obtained on selected SOI devices are presented and discussed in this paper.

Dip-Coating Process Engineering and Performance Optimization for Three-State Electrochromic Devices

NASA Astrophysics Data System (ADS)

Wu, Lu; Yang, Dejiang; Fei, Lixun; Huang, Yue; Wu, Fang; Sun, Yiling; Shi, Jiayuan; Xiang, Yong

2017-06-01

Titanium dioxide (TiO2) nanoparticles were modified onto fluorine-doped tin oxide (FTO) via dip-coating technique with different nanoparticle sizes, lifting speeds, precursor concentrations, and dipping numbers. Electrodeposition-based electrochromic device with reversible three-state optical transformation (transparent, mirror, and black) was fabricated subsequently by sandwiching a suitable amount of gel electrolyte between modified FTO electrode and flat FTO electrode. Correlation between dip-coating process engineering, morphological features of TiO2 thin films, i.e., thickness and roughness, as well as performance of electrochromic devices, i.e., optical contrast, switching time, and cycling stability, were investigated. The modified device exhibits high optical contrast of 57%, the short coloration/bleaching switching time of 6 and 20 s, and excellent cycling stability after 1500 cycles of only 27% decrement rate by adjusting dip-coating processes engineering. The results in this study will provide valuable guidance for rational design of the electrochromic device with satisfactory performance.

Novel nano materials for high performance logic and memory devices

NASA Astrophysics Data System (ADS)

Das, Saptarshi

After decades of relentless progress, the silicon CMOS industry is approaching a stall in device performance for both logic and memory devices due to fundamental scaling limitations. In order to reinforce the accelerating pace, novel materials with unique properties are being proposed on an urgent basis. This list includes one dimensional nanotubes, quasi one dimensional nanowires, two dimensional atomistically thin layered materials like graphene, hexagonal boron nitride and the more recently the rich family of transition metal di-chalcogenides comprising of MoS2, WSe2, WS2 and many more for logic applications and organic and inorganic ferroelectrics, phase change materials and magnetic materials for memory applications. Only time will tell who will win, but exploring these novel materials allow us to revisit the fundamentals and strengthen our understanding which will ultimately be beneficial for high performance device design. While there has been growing interest in two-dimensional (2D) crystals other than graphene, evaluating their potential usefulness for electronic applications is still in its infancies due to the lack of a complete picture of their performance potential. The fact that the 2-D layered semiconducting di-chalcogenides need to be connected to the "outside" world in order to capitalize on their ultimate potential immediately emphasizes the importance of a thorough understanding of the contacts. This thesis demonstrate that through a proper understanding and design of source/drain contacts and the right choice of number of MoS2 layers the excellent intrinsic properties of this 2D material can be harvested. A comprehensive experimental study on the dependence of carrier mobility on the layer thickness of back gated multilayer MoS 2 field effect transistors is also provided. A resistor network model that comprises of Thomas-Fermi charge screening and interlayer coupling is used to explain the non-monotonic trend in the extracted field effect mobility with the layer thickness. The non-monotonic trend suggests that in order to harvest the maximum potential of MoS2 for high performance device applications, a layer thickness in the range of 6-12 nm would be ideal. Finally using scandium contacts on 10nm thick exfoliated MoS2 flakes that are covered by a 15nm ALD grown Al2O3 film, record high mobility of 700cm2/Vs is achieved at room-temperature which is extremely encouraging for the design of high performance logic devices. The destructive nature of the readout process in Ferroelectric Random Access Memories (FeRAMs) is one of the major limiting factors for their wide scale commercialization. Utilizing Ferroelectric Field-Effect Transistor RAM (FeTRAM) instead solves the destructive read out problem, but at the expense of introducing crystalline ferroelectrics that are hard to integrate into CMOS. In order to address these challenges a novel, fully functional, CMOS compatible, One-Transistor-One-Transistor (1T1T) memory cell architecture using an organic ferroelectric -- PVDF-TrFE -- as the memory storage unit (gate oxide) and a silicon nanowire as the memory read out unit (channel material) is proposed and experimentally demonstrated. While evaluating the scaling potential of the above mentioned organic FeTRAM, it is found that the switching time and switching voltage of this organic copolymer PVDF-TrFE exhibits an unexpected scaling behavior as a function of the lateral device dimensions. The phenomenological theory, that explains this abnormal scaling trend, involves in-plane interchain and intrachain interaction of the copolymer - resulting in a power-law dependence of the switching field on the device area (ESW alpha ACH0.1) that is ultimately responsible for the decrease in the switching time and switching voltage. These findings are encouraging since they indicate that scaling the switching voltage and switching time without aggressively scaling the copolymer thickness occurs naturally while scaling the device area -- in this way ultimately improving the packing density and leading towards high performance memory devices.

High-work-function molybdenum oxide hole extraction contacts in hybrid organic–inorganic perovskite solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulz, Philip; Tiepelt, Jan O.; Christians, Jeffrey A.

2016-11-08

Here, we investigate the effect of high work function contacts in halide perovskite absorber-based photovoltaic devices. Photoemission spectroscopy measurements reveal that band bending is induced in the absorber by the deposition of the high work function molybdenum trioxide (MoO 3). We find that direct contact between MoO 3 and the perovskite leads to a chemical reaction, which diminishes device functionality. Introducing an ultrathin spiro-MeOTAD buffer layer prevents the reaction, yet the altered evolution of the energy levels in the methylammonium lead iodide (MAPbI 3) layer at the interface still negatively impacts device performance.

Near-Infrared to Visible Organic Upconversion Devices Based on Organic Light-Emitting Field Effect Transistors.

PubMed

Li, Dongwei; Hu, Yongsheng; Zhang, Nan; Lv, Ying; Lin, Jie; Guo, Xiaoyang; Fan, Yi; Luo, Jinsong; Liu, Xingyuan

2017-10-18

The near-infrared (NIR) to visible upconversion devices have attracted great attention because of their potential applications in the fields of night vision, medical imaging, and military security. Herein, a novel all-organic upconversion device architecture has been first proposed and developed by incorporating a NIR absorption layer between the carrier transport layer and the emission layer in heterostructured organic light-emitting field effect transistors (OLEFETs). The as-prepared devices show a typical photon-to-photon upconversion efficiency as high as 7% (maximum of 28.7% under low incident NIR power intensity) and millisecond-scale response time, which are the highest upconversion efficiency and one of the fastest response time among organic upconversion devices as referred to the previous reports up to now. The high upconversion performance mainly originates from the gain mechanism of field-effect transistor structures and the unique advantage of OLEFETs to balance between the photodetection and light emission. Meanwhile, the strategy of OLEFETs also offers the advantage of high integration so that no extra OLED is needed in the organic upconversion devices. The results would pave way for low-cost, flexible and portable organic upconversion devices with high efficiency and simplified processing.

Large Format Si:As IBC Array Performance for NGST and Future IR Space Telescope Applications

NASA Technical Reports Server (NTRS)

Ennico, Kimberly; Johnson, Roy; Love, Peter; Lum, Nancy; McKelvey, Mark; McCreight, Craig; McMurray, Robert, Jr.; DeVincenzi, D. (Technical Monitor)

2002-01-01

A mid-IR (5-30micrometer) instrument aboard a cryogenic space telescope can have an enormous impact in resolving key questions in astronomy and cosmology. A space platform's greatly reduced thermal backgrounds (compared to airborne or ground-based platforms), allow for more sensitive observations of dusty young galaxies at high redshifts, star formation of solar-type stars in the local universe, and formation and evolution of planetary disks and systems. The previous generation's largest, in sensitive IR detectors at these wavelengths are 256x256 pixel Si:As Impurity Band Conduction (IBC) devices built by Raytheon Infrared Operations (RIO) for the Space Infrared Telescope Facility/Infrared Array Camera (SIRTF)/(IRAC) instrument. RIO has successfully enhanced these devices, increasing the pixel count by a factor of 16 while matching or exceeding SIRTF/IRAC device performance. NASA-ARC in collaboration with RIO has tested the first high performance large format (1024x 1024) Si:As IBC arrays for low background applications, such as for the middle instrument on Next Generation Space Telescope (NGST) and future IR Explorer missions. These hybrid devices consist of radiation hard SIRTF/IRAC-type Si:As IBC material mated to a readout multiplexer that has been specially processed for operation at low cryogenic temperatures (below 10K), yielding high device sensitivity over a wavelength range of 5-28 micrometers. We present laboratory testing results from these benchmark, devices. Continued development in this technology is essential for conducting large-area surveys of the local and early universe through observation and for complementing future missions such as NGST, Terrestrial Planet Finder (TPF), and Focal Plane Instruments and Requirement Science Team (FIRST).

Semitransparent organic photovoltaic modules with Ag nanowire top electrodes

NASA Astrophysics Data System (ADS)

Guo, Fei; Kubis, Peter; Przybilla, Thomas; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J.

2014-10-01

Semitransparent organic photovoltaic (OPV) cells are promising for applications in transparent architectures where their opaque counterparts are not suitable. Manufacturing of large-area modules without performance losses compared to their lab-scale devices is a key step towards practical applications of this PV technology. In this paper, we report the use of solution-processed silver nanowires as top electrodes and fabricate semitransparent OPV modules based on ultra-fast laser scribing. Through a rational choice of device architecture in combination with high-precision laser patterning, we demonstrate efficient semitransparent modules with comparable performance as compared to the reference devices.

Highly Stretchable Multifunctional Wearable Devices Based on Conductive Cotton and Wool Fabrics.

PubMed

Souri, Hamid; Bhattacharyya, Debes

2018-06-05

The demand for stretchable, flexible, and wearable multifunctional devices based on conductive nanomaterials is rapidly increasing considering their interesting applications including human motion detection, robotics, and human-machine interface. There still exists a great challenge to manufacture stretchable, flexible, and wearable devices through a scalable and cost-effective fabrication method. Herein, we report a simple method for the mass production of electrically conductive textiles, made of cotton and wool, by hybridization of graphene nanoplatelets and carbon black particles. Conductive textiles incorporated into a highly elastic elastomer are utilized as highly stretchable and wearable strain sensors and heaters. The electromechanical characterizations of our multifunctional devices establish their excellent performance as wearable strain sensors to monitor various human motions, such as finger, wrist, and knee joint movements, and to recognize sound with high durability. Furthermore, the electrothermal behavior of our devices shows their potential application as stretchable and wearable heaters working at a maximum temperature of 103 °C powered with 20 V.

Performance impact of dynamic surface coatings on polymeric insulator-based dielectrophoretic particle separators.

PubMed

Davalos, Rafael V; McGraw, Gregory J; Wallow, Thomas I; Morales, Alfredo M; Krafcik, Karen L; Fintschenko, Yolanda; Cummings, Eric B; Simmons, Blake A

2008-02-01

Efficient and robust particle separation and enrichment techniques are critical for a diverse range of lab-on-a-chip analytical devices including pathogen detection, sample preparation, high-throughput particle sorting, and biomedical diagnostics. Previously, using insulator-based dielectrophoresis (iDEP) in microfluidic glass devices, we demonstrated simultaneous particle separation and concentration of various biological organisms, polymer microbeads, and viruses. As an alternative to glass, we evaluate the performance of similar iDEP structures produced in polymer-based microfluidic devices. There are numerous processing and operational advantages that motivate our transition to polymers such as the availability of numerous innate chemical compositions for tailoring performance, mechanical robustness, economy of scale, and ease of thermoforming and mass manufacturing. The polymer chips we have evaluated are fabricated through an injection molding process of the commercially available cyclic olefin copolymer Zeonor 1060R. This publication is the first to demonstrate insulator-based dielectrophoretic biological particle differentiation in a polymeric device injection molded from a silicon master. The results demonstrate that the polymer devices achieve the same performance metrics as glass devices. We also demonstrate an effective means of enhancing performance of these microsystems in terms of system power demand through the use of a dynamic surface coating. We demonstrate that the commercially available nonionic block copolymer surfactant, Pluronic F127, has a strong interaction with the cyclic olefin copolymer at very low concentrations, positively impacting performance by decreasing the electric field necessary to achieve particle trapping by an order of magnitude. The presence of this dynamic surface coating, therefore, lowers the power required to operate such devices and minimizes Joule heating. The results of this study demonstrate that iDEP polymeric microfluidic devices with surfactant coatings provide an affordable engineering strategy for selective particle enrichment and sorting.

Design and evaluation of cellular power converter architectures

NASA Astrophysics Data System (ADS)

Perreault, David John

Power electronic technology plays an important role in many energy conversion and storage applications, including machine drives, power supplies, frequency changers and UPS systems. Increases in performance and reductions in cost have been achieved through the development of higher performance power semiconductor devices and integrated control devices with increased functionality. Manufacturing techniques, however, have changed little. High power is typically achieved by paralleling multiple die in a sing!e package, producing the physical equivalent of a single large device. Consequently, both the device package and the converter in which the device is used continue to require large, complex mechanical structures, and relatively sophisticated heat transfer systems. An alternative to this approach is the use of a cellular power converter architecture, which is based upon the parallel connection of a large number of quasi-autonomous converters, called cells, each of which is designed for a fraction of the system rating. The cell rating is chosen such that single-die devices in inexpensive packages can be used, and the cell fabricated with an automated assembly process. The use of quasi-autonomous cells means that system performance is not compromised by the failure of a cell. This thesis explores the design of cellular converter architectures with the objective of achieving improvements in performance, reliability, and cost over conventional converter designs. New approaches are developed and experimentally verified for highly distributed control of cellular converters, including methods for ripple cancellation and current-sharing control. The performance of these techniques are quantified, and their dynamics are analyzed. Cell topologies suitable to the cellular architecture are investigated, and their use for systems in the 5-500 kVA range is explored. The design, construction, and experimental evaluation of a 6 kW cellular switched-mode rectifier is also addressed. This cellular system implements entirely distributed control, and achieves performance levels unattainable with an equivalent single converter. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617-253-5668; Fax 617-253-1690.)

Small, Fast TES Microcalorimeters with Unprecedented X-ray Spectral Performance

NASA Technical Reports Server (NTRS)

Eckart, M. E.; Adams, J. S.; Bailey, C. N.; Bandler, S. R.; Chervenak, J. A.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.; Porter, F. S.; Sadleir, J. E.;

Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics

NASA Astrophysics Data System (ADS)

Di Lecce, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio

2015-12-01

The Graphene-Base Heterojunction Transistor (GBHT) is a novel device concept with a high potential for analog high-frequency RF operation, in which the current is due to both thermionic emission and tunneling. In this paper we study through numerical simulations the influence of previously uninvestigated aspects of Si- and Ge-based GBHTs-namely, crystallographic orientation and doping density values-on the device performance; a comparison with an aggressively scaled HBT structure is then reported. The simulations are carried out with an in-house developed code based on a 1-D quantum transport model within the effective mass approximation and the assumptions of ballistic transport with non-parabolic corrections and ideal semiconductor-graphene interface. We show that crystallographic orientation has a negligible effect on the GBHT performance. The doping density values in the GBHT emitter and collector regions can be tailored to maximize the device performance: the Si device shows better overall performance than the Ge one, yielding a peak cut-off frequency fT higher than 4 THz together with an intrinsic voltage gain above 10, or even higher fT at the cost of a lower gain. The Si-based GBHT can potentially outperform the SiGe HBT by a 2.8 higher fT . For a Si-based GBHT with a circular active region of diameter 50-100 nm, a theoretical balanced value for fT and fmax above 2 THz can be achieved, provided the base parasitics are carefully minimized.

CFD simulations of the flow control performance applied for inlet of low drag high-bypass turbofan engine at cross flow regimes

NASA Astrophysics Data System (ADS)

Kursakov, I. A.; Kazhan, E. V.; Lysenkov, A. V.; Savelyev, A. A.

2016-10-01

Paper describes the optimization procedure for low cruise drag inlet of high-bypass ratio turbofan engine (HBRE). The critical cross-flow velocity when the flow separation on the lee side of the inlet channel occurs is determined. The effciency of different flow control devices used to improve the flow parameters at inlet section cross flow regime is analyzed. Boundary layer suction, bypass slot and vortex generators are considered. It is shown that flow control devices enlarge the stability range of inlet performance at cross flow regimes.

Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs

NASA Technical Reports Server (NTRS)

Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Iannello, Christopher J.; Del Castillo, Linda Y.; Fitzpatrick, Fred D.; Mojarradi, Mohammad M.;

High Temperature Near-Field NanoThermoMechanical Rectification

PubMed Central

Elzouka, Mahmoud; Ndao, Sidy

2017-01-01

Limited performance and reliability of electronic devices at extreme temperatures, intensive electromagnetic fields, and radiation found in space exploration missions (i.e., Venus & Jupiter planetary exploration, and heliophysics missions) and earth-based applications requires the development of alternative computing technologies. In the pursuit of alternative technologies, research efforts have looked into developing thermal memory and logic devices that use heat instead of electricity to perform computations. However, most of the proposed technologies operate at room or cryogenic temperatures, due to their dependence on material’s temperature-dependent properties. Here in this research, we show experimentally—for the first time—the use of near-field thermal radiation (NFTR) to achieve thermal rectification at high temperatures, which can be used to build high-temperature thermal diodes for performing logic operations in harsh environments. We achieved rectification through the coupling between NFTR and the size of a micro/nano gap separating two terminals, engineered to be a function of heat flow direction. We fabricated and tested a proof-of-concept NanoThermoMechanical device that has shown a maximum rectification of 10.9% at terminals’ temperatures of 375 and 530 K. Experimentally, we operated the microdevice in temperatures as high as about 600 K, demonstrating this technology’s suitability to operate at high temperatures. PMID:28322324

Solvent-Assisted Surface Engineering for High-Performance All-Inorganic Perovskite Nanocrystal Light-Emitting Diodes.

PubMed

Wang, Lin; Liu, Baiquan; Zhao, Xin; Demir, Hilmi Volkan; Gu, Haoshuang; Sun, Handong

2018-06-13

All-inorganic cesium halide perovskite nanocrystals have attracted much interest in optoelectronic applications for the sake of the readily adjustable band gaps, high photoluminescence quantum yield, pure color emission, and affordable cost. However, because of the ineluctable utilization of organic surfactants during the synthesis, the structural and optical properties of CsPbBr 3 nanocrystals degrade upon transforming from colloidal solutions to solid thin films, which plagues the device operation. Here, we develop a novel solvent-assisted surface engineering strategy, producing high-quality CsPbBr 3 thin films for device applications. A good solvent is first introduced as an assembly trigger to conduct assembly in a one-dimensional direction, which is then interrupted by adding a nonsolvent. The nonsolvent drives the adjacent nanoparticles connecting in a two-dimensional direction. Assembled CsPbBr 3 nanocrystal thin films are densely packed and very smooth with a surface roughness of ∼4.8 nm, which is highly desirable for carrier transport in a light-emitting diode (LED) device. Meanwhile, the film stability is apparently improved. Benefiting from this facile and reliable strategy, we have achieved remarkably improved performance of CsPbBr 3 nanocrystal-based LEDs. Our results not only enrich the methods of nanocrystal surface engineering but also shed light on developing high-performance LEDs.

High Temperature Near-Field NanoThermoMechanical Rectification

NASA Astrophysics Data System (ADS)

Elzouka, Mahmoud; Ndao, Sidy

2017-03-01

Limited performance and reliability of electronic devices at extreme temperatures, intensive electromagnetic fields, and radiation found in space exploration missions (i.e., Venus & Jupiter planetary exploration, and heliophysics missions) and earth-based applications requires the development of alternative computing technologies. In the pursuit of alternative technologies, research efforts have looked into developing thermal memory and logic devices that use heat instead of electricity to perform computations. However, most of the proposed technologies operate at room or cryogenic temperatures, due to their dependence on material’s temperature-dependent properties. Here in this research, we show experimentally—for the first time—the use of near-field thermal radiation (NFTR) to achieve thermal rectification at high temperatures, which can be used to build high-temperature thermal diodes for performing logic operations in harsh environments. We achieved rectification through the coupling between NFTR and the size of a micro/nano gap separating two terminals, engineered to be a function of heat flow direction. We fabricated and tested a proof-of-concept NanoThermoMechanical device that has shown a maximum rectification of 10.9% at terminals’ temperatures of 375 and 530 K. Experimentally, we operated the microdevice in temperatures as high as about 600 K, demonstrating this technology’s suitability to operate at high temperatures.

Challenge of Si/SiGe technology to optoelectronics

NASA Astrophysics Data System (ADS)

Chang, C. Y.; Jung, J. G.

1993-01-01

Low temperature epitaxy (LTE) of Si and SiGecanbe performed at a temperature of 550 C or lower. Very promising applications can be opened. Such as high speed/high frequency operations at 90GHZ by constructing heterojunction bipolar transistors. High performance FET'slikepseudomorphic p-channel orn-channel high mobility field effect transistors are presented which canbe composed to perform CMOS operations. Optoelectronic devices such as IRdetectors (1-12um), mutiple quantum well (MOW), disordered superlattice (d-SL) which are the potential candidatesof IR detector and optical sources (e.q. LED, LD etc.) Various physical insights regarding to SiGe heterostructures are presented which includeswave function filter, mass filter as well as band mixing are introduced. Researchesat National Nano Device Laboratory (NDL) which processes the capability of 0.3um Si ULSI technologies and SiGe works as well as lll-V, a-Si/SiGe lines are also presented.

Silicon Carbide Solar Cells Investigated

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Raffaelle, Ryne P.

2001-01-01

The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)

NASA Astrophysics Data System (ADS)

Cha, Giho; Kim, Youngchul; Jang, Hyungwoo; Kang, Hyunsoon; Song, Changsub

2001-10-01

Silicon direct bonding technique was successfully applied for the fabrication of high voltage IGBT (Insulated Gate Bipolar Transistor). In this work, 5 inch, p-type CZ wafer for handle wafer and n-type FZ wafer for device wafer were used and bonding the two wafers was performed at reduced pressure (1mmTorr) using a modified vacuum bonding machine. Since the breakdown voltage in high voltage device has been determined by the remained thickness of device layer, grinding and CMP steps should be carefully designed in order to acquire better uniformity of device layer. In order to obtain the higher removal rate and the final better uniformity of device layer, the harmony of the two processes must be considered. We found that the concave type of grinding profile and the optimal thickness of ground wafer was able to reduce the process time of CMP step and also to enhance the final thickness uniformity of device layer up to +/- 1%. Finally, when compared epitaxy layer with SDB wafer, the SDB wafer was found to be more favorable in terms of cost and electrical characteristics.

Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off Ratio.

PubMed

Oh, Gwangtaek; Kim, Jin-Soo; Jeon, Ji Hoon; Won, EunA; Son, Jong Wan; Lee, Duk Hyun; Kim, Cheol Kyeom; Jang, Jingon; Lee, Takhee; Park, Bae Ho

2015-07-28

High-quality channel layer is required for next-generation flexible electronic devices. Graphene is a good candidate due to its high carrier mobility and unique ambipolar transport characteristics but typically shows a low on/off ratio caused by gapless band structure. Popularly investigated organic semiconductors, such as pentacene, suffer from poor carrier mobility. Here, we propose a graphene/pentacene channel layer with high-k ion-gel gate dielectric. The graphene/pentacene device shows both high on/off ratio and carrier mobility as well as excellent mechanical flexibility. Most importantly, it reveals ambipolar behaviors and related negative differential resistance, which are controlled by external bias. Therefore, our graphene/pentacene barristor with ion-gel gate dielectric can offer various flexible device applications with high performances.

Nanofluidic Pre-Concentration Devices for Enhancing the Detection Sensitivity and Selectivity of Biomarkers for Human Performance Monitoring

DTIC Science & Technology

2014-11-24

aptamers to enhance specificity. Additionally, pre-concentration was coupled to various detection paradigms to achieve high-sensitivity biomarker... Aptamers , Biomarkers, Nanofluidics, Pre-concentration Devices, Sensing 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT SAR 18. NUMBER...devices and optimized electrokinetic pre-concentration conditions for key neurological biomarkers of interest, by using nanoparticles and aptamers to

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

Combined effects of altitude and high temperature on complex performance.

DOT National Transportation Integrated Search

1971-04-01

Nine well-trained subjects were tested on a complex performance device designed to assess functions of relevance to aircrew activities. The tests, which involved tracking, monitoring, and mental arithmetic, were performed during exposure to altitude ...

Controllable Growth of Perovskite Films by Room-Temperature Air Exposure for Efficient Planar Heterojunction Photovoltaic Cells.

PubMed

Yang, Bin; Dyck, Ondrej; Poplawsky, Jonathan; Keum, Jong; Das, Sanjib; Puretzky, Alexander; Aytug, Tolga; Joshi, Pooran C; Rouleau, Christopher M; Duscher, Gerd; Geohegan, David B; Xiao, Kai

2015-12-01

A two-step solution processing approach has been established to grow void-free perovskite films for low-cost high-performance planar heterojunction photovoltaic devices. A high-temperature thermal annealing treatment was applied to drive the diffusion of CH3NH3I precursor molecules into a compact PbI2 layer to form perovskite films. However, thermal annealing for extended periods led to degraded device performance owing to the defects generated by decomposition of perovskite into PbI2. A controllable layer-by-layer spin-coating method was used to grow "bilayer" CH3NH3I/PbI2 films, and then drive the interdiffusion between PbI2 and CH3NH3I layers by a simple air exposure at room temperature for making well-oriented, highly crystalline perovskite films without thermal annealing. This high degree of crystallinity resulted in a carrier diffusion length of ca. 800 nm and a high device efficiency of 15.6%, which is comparable to values reported for thermally annealed perovskite films. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Origin of vertical orientation in two-dimensional metal halide perovskites and its effect on photovoltaic performance.

PubMed

Chen, Alexander Z; Shiu, Michelle; Ma, Jennifer H; Alpert, Matthew R; Zhang, Depei; Foley, Benjamin J; Smilgies, Detlef-M; Lee, Seung-Hun; Choi, Joshua J

2018-04-06

Thin films based on two-dimensional metal halide perovskites have achieved exceptional performance and stability in numerous optoelectronic device applications. Simple solution processing of the 2D perovskite provides opportunities for manufacturing devices at drastically lower cost compared to current commercial technologies. A key to high device performance is to align the 2D perovskite layers, during the solution processing, vertical to the electrodes to achieve efficient charge transport. However, it is yet to be understood how the counter-intuitive vertical orientations of 2D perovskite layers on substrates can be obtained. Here we report a formation mechanism of such vertically orientated 2D perovskite in which the nucleation and growth arise from the liquid-air interface. As a consequence, choice of substrates can be liberal from polymers to metal oxides depending on targeted application. We also demonstrate control over the degree of preferential orientation of the 2D perovskite layers and its drastic impact on device performance.

High Performance Tandem Perovskite/Polymer Solar Cells

NASA Astrophysics Data System (ADS)

Liu, Yao; Bag, Monojit; Page, Zachariah; Renna, Lawrence; Kim, Paul; Choi, Jaewon; Emrick, Todd; Venkataraman, D.; Russell, Thomas

Combining perovskites with other inorganic materials, such as copper indium gallium diselenide (CIGS) or silicon, is enabling significant improvement in solar cell device performance. Here, we demonstrate a highly efficient hybrid tandem solar cell fabricated through a facile solution deposition approach to give a perovskite front sub-cell and a polymer:fullerene blend back sub-cell. This methodology eliminates the adverse effects of thermal annealing during perovskite fabrication on polymer solar cells. The record tandem solar cell efficiency of 15.96% is 40% greater than the corresponding perovskite-based single junction device and 65% greater than the polymer-based single junction device, while mitigating deleterious hysteresis effects often associated with perovskite solar cells. The hybrid tandem devices demonstrate the synergistic effects arising from the combination of perovskite and polymer-based materials for solar cells. This work was supported by the Department of Energy-supported Energy Frontier Research Center at the University of Massachusetts (DE-SC0001087). The authors acknowledge the W.M. Keck Electron Microscopy.

The development of differential inductors using double air-bridge structure based on integrated passive device technology

NASA Astrophysics Data System (ADS)

Li, Yang; Yao, Zhao; Fu, Xiao-Qian; Li, Zhi-Ming; Shan, Fu-Kai; Wang, Cong

2017-05-01

Recently, integrated passive devices have become increasingly popular; inductor realization, in particular, offers interesting high performance for RF modules and systems. In this paper, a development of differential inductor fabricated by integrated passive devices technology using a double air-bridge structure is presented. A study of the model development of the differential inductor is first demonstrated. In this model section, a segment box analysis method is applied to provide a clear presentation of the differential inductor. Compared with other work that only shows a brief description of the process, the integrated passive devices process used to fabricate the inductor in this study is elaborated on. Finally, a characterization of differential inductors with different physical layout parameters is illustrated based on inductance and quality factors, which provides a valuable reference for realizing high performance. The proposed work provides a good solution for the design, fabrication and practical application of RF modules and systems.

Towards stable and commercially available perovskite solar cells

DOE PAGES

Park, Nam-Gyu; Grätzel, Michael; Miyasaka, Tsutomu; ...

2016-10-17

Solar cells employing a halide perovskite with an organic cation now show power conversion efficiency of up to 22%. But, these cells are facing issues towards commercialization, such as the need to achieve long-term stability and the development of a manufacturing method for the reproducible fabrication of high-performance devices. We propose a strategy to obtain stable and commercially viable perovskite solar cells. A reproducible manufacturing method is suggested, as well as routes to manage grain boundaries and interfacial charge transport. Electroluminescence is regarded as a metric to gauge theoretical efficiency. We highlight how optimizing the design of device architectures ismore » important not only for achieving high efficiency but also for hysteresis-free and stable performance. Here, we argue that reliable device characterization is needed to ensure the advance of this technology towards practical applications. We believe that perovskite-based devices can be competitive with silicon solar modules, and discuss issues related to the safe management of toxic material.« less

Speckle-based portable device for in-situ metrology of x-ray mirrors at Diamond Light Source

NASA Astrophysics Data System (ADS)

Wang, Hongchang; Kashyap, Yogesh; Zhou, Tunhe; Sawhney, Kawal

2017-09-01

For modern synchrotron light sources, the push toward diffraction-limited and coherence-preserved beams demands accurate metrology on X-ray optics. Moreover, it is important to perform in-situ characterization and optimization of X-ray mirrors since their ultimate performance is critically dependent on the working conditions. Therefore, it is highly desirable to develop a portable metrology device, which can be easily implemented on a range of beamlines for in-situ metrology. An X-ray speckle-based portable device for in-situ metrology of synchrotron X-ray mirrors has been developed at Diamond Light Source. Ultra-high angular sensitivity is achieved by scanning the speckle generator in the X-ray beam. In addition to the compact setup and ease of implementation, a user-friendly graphical user interface has been developed to ensure that characterization and alignment of X-ray mirrors is simple and fast. The functionality and feasibility of this device is presented with representative examples.

Staircase Quantum Dots Configuration in Nanowires for Optimized Thermoelectric Power

PubMed Central

Li, Lijie; Jiang, Jian-Hua

2016-01-01

The performance of thermoelectric energy harvesters can be improved by nanostructures that exploit inelastic transport processes. One prototype is the three-terminal hopping thermoelectric device where electron hopping between quantum-dots are driven by hot phonons. Such three-terminal hopping thermoelectric devices have potential in achieving high efficiency or power via inelastic transport and without relying on heavy-elements or toxic compounds. We show in this work how output power of the device can be optimized via tuning the number and energy configuration of the quantum-dots embedded in parallel nanowires. We find that the staircase energy configuration with constant energy-step can improve the power factor over a serial connection of a single pair of quantum-dots. Moreover, for a fixed energy-step, there is an optimal length for the nanowire. Similarly for a fixed number of quantum-dots there is an optimal energy-step for the output power. Our results are important for future developments of high-performance nanostructured thermoelectric devices. PMID:27550093

Performance analysis of junction-less double Gate n-p-n impact ionization MOS transistor (JLDG n-IMOS)

NASA Astrophysics Data System (ADS)

Chauhan, Manvendra Singh; Chauhan, R. K.

2018-04-01

This paper demonstrates a Junction-less Double Gate n-p-n Impact ionization MOS transistor (JLDG n-IMOS) on a very light doped p-type silicon body. Device structure proposed in the paper is based on charge plasma concept. There is no metallurgical junctions in the proposed device and does not need any impurity doping to create the drain and source regions. Due to doping-less nature, the fabrication process is simple for JLDG n-IMOS. The double gate engineering in proposed device leads to reduction in avalanche breakdown via impact ionization, generating large number of carriers in drain-body junction, resulting high ION current, small IOFF current and great improvement in ION/IOFF ratio. The simulation and examination of the proposed device have been performed on ATLAS device simulatorsoftware.

Increasing Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

DOEpatents

Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

1999-08-24

High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Increased Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

DOEpatents

Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

1997-07-08

High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Understanding nonlinear vibration behaviours in high-power ultrasonic surgical devices

PubMed Central

Mathieson, Andrew; Cardoni, Andrea; Cerisola, Niccolò; Lucas, Margaret

2015-01-01

Ultrasonic surgical devices are increasingly used in oral, craniofacial and maxillofacial surgery to cut mineralized tissue, offering the surgeon high accuracy with minimal risk to nerve and vessel tissue. Power ultrasonic devices operate in resonance, requiring their length to be a half-wavelength or multiple-half-wavelength. For bone surgery, devices based on a half-wavelength have seen considerable success, but longer multiple-half-wavelength endoscopic devices have recently been proposed to widen the range of surgeries. To provide context for these developments, some examples of surgical procedures and the associated designs of ultrasonic cutting tips are presented. However, multiple-half-wavelength components, typical of endoscopic devices, have greater potential to exhibit nonlinear dynamic behaviours that have a highly detrimental effect on device performance. Through experimental characterization of the dynamic behaviour of endoscopic devices, it is demonstrated how geometrical features influence nonlinear dynamic responses. Period doubling, a known route to chaotic behaviour, is shown to be significantly influenced by the cutting tip shape, whereas the cutting tip has only a limited effect on Duffing-like responses, particularly the shape of the hysteresis curve, which is important for device stability. These findings underpin design, aiming to pave the way for a new generation of ultrasonic endoscopic surgical devices. PMID:27547081

Advanced development of double-injection, deep-impurity semiconductor switches

NASA Technical Reports Server (NTRS)

Hanes, M. H.

1987-01-01

Deep-impurity, double-injection devices, commonly refered to as (DI) squared devices, represent a class of semiconductor switches possessing a very high degree of tolerance to electron and neutron irradiation and to elevated temperature operation. These properties have caused them to be considered as attractive candidates for space power applications. The design, fabrication, and testing of several varieties of (DI) squared devices intended for power switching are described. All of these designs were based upon gold-doped silicon material. Test results, along with results of computer simulations of device operation, other calculations based upon the assumed mode of operation of (DI) squared devices, and empirical information regarding power semiconductor device operation and limitations, have led to the conculsion that these devices are not well suited to high-power applications. When operated in power circuitry configurations, they exhibit high-power losses in both the off-state and on-state modes. These losses are caused by phenomena inherent to the physics and material of the devices and cannot be much reduced by device design optimizations. The (DI) squared technology may, however, find application in low-power functions such as sensing, logic, and memory, when tolerance to radiation and temperature are desirable (especially is device performance is improved by incorporation of deep-level impurities other than gold.

Cross delay line sensor characterization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Owens, Israel J; Remelius, Dennis K; Tiee, Joe J

There exists a wealth of information in the scientific literature on the physical properties and device characterization procedures for complementary metal oxide semiconductor (CMOS), charge coupled device (CCD) and avalanche photodiode (APD) format detectors. Numerous papers and books have also treated photocathode operation in the context of photomultiplier tube (PMT) operation for either non imaging applications or limited night vision capability. However, much less information has been reported in the literature about the characterization procedures and properties of photocathode detectors with novel cross delay line (XDL) anode structures. These allow one to detect single photons and create images by recordingmore » space and time coordinate (X, Y & T) information. In this paper, we report on the physical characteristics and performance of a cross delay line anode sensor with an enhanced near infrared wavelength response photocathode and high dynamic range micro channel plate (MCP) gain (> 10{sup 6}) multiplier stage. Measurement procedures and results including the device dark event rate (DER), pulse height distribution, quantum and electronic device efficiency (QE & DQE) and spatial resolution per effective pixel region in a 25 mm sensor array are presented. The overall knowledge and information obtained from XDL sensor characterization allow us to optimize device performance and assess capability. These device performance properties and capabilities make XDL detectors ideal for remote sensing field applications that require single photon detection, imaging, sub nano-second timing response, high spatial resolution (10's of microns) and large effective image format.« less

Constructing experimental devices for half-ton synthesis of gadolinium-loaded liquid scintillator and its performance.

PubMed

Park, Young Seo; Jang, Yeong Min; Joo, Kyung Kwang

2018-04-01

This paper describes in brief features of various experimental devices constructed for half-ton synthesis of gadolinium(Gd)-loaded liquid scintillator (GdLS) and also includes the performances and detailed chemical and physical results of a 0.5% high-concentration GdLS. Various feasibility studies on useful apparatus used for loading Gd into solvents have been carried out. The transmittance, Gd concentration, density, light yield, and moisture content were measured for quality control. We show that with the help of adequate automated experimental devices and tools, it is possible to perform ton scale synthesis of GdLS at moderate laboratory scale without difficulty. The synthesized GdLS was satisfactory to meet chemical, optical, and physical properties and various safety requirements. These synthesizing devices can be expanded into massive scale next-generation neutrino experiments of several hundred tons.

A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement

PubMed Central

Kim, Jaemin; Son, Donghee; Lee, Mincheol; Song, Changyeong; Song, Jun-Kyul; Koo, Ja Hoon; Lee, Dong Jun; Shim, Hyung Joon; Kim, Ji Hoon; Lee, Minbaek; Hyeon, Taeghwan; Kim, Dae-Hyeong

2016-01-01

Strategies for efficient charge confinement in nanocrystal floating gates to realize high-performance memory devices have been investigated intensively. However, few studies have reported nanoscale experimental validations of charge confinement in closely packed uniform nanocrystals and related device performance characterization. Furthermore, the system-level integration of the resulting devices with wearable silicon electronics has not yet been realized. We introduce a wearable, fully multiplexed silicon nonvolatile memory array with nanocrystal floating gates. The nanocrystal monolayer is assembled over a large area using the Langmuir-Blodgett method. Efficient particle-level charge confinement is verified with the modified atomic force microscopy technique. Uniform nanocrystal charge traps evidently improve the memory window margin and retention performance. Furthermore, the multiplexing of memory devices in conjunction with the amplification of sensor signals based on ultrathin silicon nanomembrane circuits in stretchable layouts enables wearable healthcare applications such as long-term data storage of monitored heart rates. PMID:26763827

Electrical and optical performance of mid-wavelength infrared InAsSb heterostructure detectors

NASA Astrophysics Data System (ADS)

Gomółka, Emilia; Kopytko, Małgorzata; Michalczewski, Krystian; Kubiszyn, Łukasz; Kebłowski, Artur; Gawron, Waldemar; Martyniuk, Piotr; Piotrowski, Józef; Rutkowski, Jarosław

2017-10-01

In this work we investigate the high-operating temperature performance of InAsSb/AlSb heterostructure detectors with cut-off wavelengths near 5 μm at 230 K. The devices have been fabricated with different type of the absorbing layer: nominally undoped absorber, and both n- and p-type doped. The results show that the device performance strongly depends on absorber layer doping. Generally, p-type absorber provides higher values of current responsivity than n-type absorber, but at the same time also higher values of dark current. The device with nominally undoped absorbing layer shows moderate values of both current responsivity and dark current. Resulting detectivities D° of non-immersed devices varies from 2×109 to 7×109 cmHz1/2/W at 230 K, which is easily achievable with a two stage thermoelectric cooler.

Enhanced thermoelectric performance of graphene nanoribbon-based devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hossain, Md Sharafat, E-mail: hossain@student.unimelb.edu.au; Huynh, Duc Hau; Nguyen, Phuong Duc

There have been numerous theoretical studies on exciting thermoelectric properties of graphene nano-ribbons (GNRs); however, most of these studies are mainly based on simulations. In this work, we measure and characterize the thermoelectric properties of GNRs and compare the results with theoretical predictions. Our experimental results verify that nano-structuring and patterning graphene into nano-ribbons significantly enhance its thermoelectric power, confirming previous predictions. Although patterning results in lower conductance (G), the overall power factor (S{sup 2}G) increases for nanoribbons. We demonstrate that edge roughness plays an important role in achieving such an enhanced performance and support it through first principles simulations.more » We show that uncontrolled edge roughness, which is considered detrimental in GNR-based electronic devices, leads to enhanced thermoelectric performance of GNR-based thermoelectric devices. The result validates previously reported theoretical studies of GNRs and demonstrates the potential of GNRs for the realization of highly efficient thermoelectric devices.« less

A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement.

PubMed

Kim, Jaemin; Son, Donghee; Lee, Mincheol; Song, Changyeong; Song, Jun-Kyul; Koo, Ja Hoon; Lee, Dong Jun; Shim, Hyung Joon; Kim, Ji Hoon; Lee, Minbaek; Hyeon, Taeghwan; Kim, Dae-Hyeong

2016-01-01

Strategies for efficient charge confinement in nanocrystal floating gates to realize high-performance memory devices have been investigated intensively. However, few studies have reported nanoscale experimental validations of charge confinement in closely packed uniform nanocrystals and related device performance characterization. Furthermore, the system-level integration of the resulting devices with wearable silicon electronics has not yet been realized. We introduce a wearable, fully multiplexed silicon nonvolatile memory array with nanocrystal floating gates. The nanocrystal monolayer is assembled over a large area using the Langmuir-Blodgett method. Efficient particle-level charge confinement is verified with the modified atomic force microscopy technique. Uniform nanocrystal charge traps evidently improve the memory window margin and retention performance. Furthermore, the multiplexing of memory devices in conjunction with the amplification of sensor signals based on ultrathin silicon nanomembrane circuits in stretchable layouts enables wearable healthcare applications such as long-term data storage of monitored heart rates.

Constructing experimental devices for half-ton synthesis of gadolinium-loaded liquid scintillator and its performance

NASA Astrophysics Data System (ADS)

Park, Young Seo; Jang, Yeong Min; Joo, Kyung Kwang

2018-04-01

This paper describes in brief features of various experimental devices constructed for half-ton synthesis of gadolinium(Gd)-loaded liquid scintillator (GdLS) and also includes the performances and detailed chemical and physical results of a 0.5% high-concentration GdLS. Various feasibility studies on useful apparatus used for loading Gd into solvents have been carried out. The transmittance, Gd concentration, density, light yield, and moisture content were measured for quality control. We show that with the help of adequate automated experimental devices and tools, it is possible to perform ton scale synthesis of GdLS at moderate laboratory scale without difficulty. The synthesized GdLS was satisfactory to meet chemical, optical, and physical properties and various safety requirements. These synthesizing devices can be expanded into massive scale next-generation neutrino experiments of several hundred tons.

Low-temperature phase transitions in a soluble oligoacene and their effect on device performance and stability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ward, J. W.; Goetz, K. P.; Obaid, A.

The use of organic semiconductors in high-performance organic field-effect transistors requires a thorough understanding of the effects that processing conditions, thermal, and bias-stress history have on device operation. Here, we evaluate the temperature dependence of the electrical properties of transistors fabricated with 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene, a material that has attracted much attention recently due to its exceptional electrical properties. We have discovered a phase transition at T = 205 K and discuss its implications on device performance and stability. We examined the impact of this low-temperature phase transition on the thermodynamic, electrical, and structural properties of both single crystals and thin films of this material.more » Our results show that while the changes to the crystal structure are reversible, the induced thermal stress yields irreversible degradation of the devices.« less

Vertical-cavity surface-emitting lasers come of age

NASA Astrophysics Data System (ADS)

Morgan, Robert A.; Lehman, John A.; Hibbs-Brenner, Mary K.

1996-04-01

This manuscript reviews our efforts in demonstrating state-of-the-art planar, batch-fabricable, high-performance vertical-cavity surface-emitting lasers (VCSELs). All performance requirements for short-haul data communication applications are clearly established. We concentrate on the flexibility of the established proton-implanted AlGaAs-based (emitting near 850 nm) technology platform, focusing on a standard device design. This structure is shown to meet or exceed performance and producibility requirements. These include > 99% device yield across 3-in-dia. metal-organic vapor phase epitaxy (MOVPE)-grown wafers and wavelength operation across a > 100-nm range. Recent progress in device performance [low threshold voltage (Vth equals 1.53 V); threshold current (Ith equals 0.68 mA); continuous wave (CW) power (Pcw equals 59 mW); maximum and minimum CW lasing temperature (T equals 200 degree(s)C, 10 K); and wall-plug efficiencies ((eta) wp equals 28%)] should enable great advances in VCSEL-based technologies. We also discuss the viability of VCSELs in cryogenic and avionic/military environments. Also reviewed is a novel technique, modifying this established platform, to engineer low-threshold, high-speed, single- mode VCSELs.

Performance limit of daytime radiative cooling in warm humid environment

NASA Astrophysics Data System (ADS)

Suichi, Takahiro; Ishikawa, Atsushi; Hayashi, Yasuhiko; Tsuruta, Kenji

2018-05-01

Daytime radiative cooling potentially offers efficient passive cooling, but the performance is naturally limited by the environment, such as the ambient temperature and humidity. Here, we investigate the performance limit of daytime radiative cooling under warm and humid conditions in Okayama, Japan. A cooling device, consisting of alternating layers of SiO2 and poly(methyl methacrylate) on an Al mirror, is fabricated and characterized to demonstrate a high reflectance for sunlight and a selective thermal radiation in the mid-infrared region. In the temperature measurement under the sunlight irradiation, the device shows 3.4 °C cooler than a bare Al mirror, but 2.8 °C warmer than the ambient of 35 °C. The corresponding numerical analyses reveal that the atmospheric window in λ = 16 ˜ 25 μm is closed due to a high humidity, thereby limiting the net emission power of the device. Our study on the humidity influence on the cooling performance provides a general guide line of how one can achieve practical passive cooling in a warm humid environment.

Spray-painted binder-free SnSe electrodes for high-performance energy-storage devices.

PubMed

Wang, Xianfu; Liu, Bin; Xiang, Qingyi; Wang, Qiufan; Hou, Xiaojuan; Chen, Di; Shen, Guozhen

2014-01-01

SnSe nanocrystal electrodes on three-dimensional (3D) carbon fabric and Au-coated polyethylene terephthalate (PET) wafer have been prepared by a simple spray-painting process and were further investigated as binder-free active-electrodes for Lithium-ion batteries (LIBs) and flexible stacked all-solid-state supercapacitors. The as-painted SnSe nanocrystals/carbon fabric electrodes exhibit an outstanding capacity of 676 mAh g(-1) after 80 cycles at a current density of 200 mA g(-1) and a considerable high-rate capability in lithium storage because of the excellent ion transport from the electrolyte to the active materials and the efficient charge transport between current collector and electrode materials. The binder-free electrodes also provide a larger electrochemical active surface compared with electrodes containing binders, which leads to the enhanced capacities of energy-storage devices. A flexible stacked all-solid-state supercapacitor based on the SnSe nanocrystals on Au-coated PET wafers shows high capacitance reversibility with little performance degradation at different current densities after 2200 charge-discharge cycles and even when bent. This allows for many potential applications in facile, cost-effective, spray-paintable, and flexible energy-storage devices. The results indicate that the fabrication of binder-free electrodes by a spray painting process is an interesting direction for the preparation of high-performance energy-storage devices. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays.

PubMed

Chen, Po-Chiang; Shen, Guozhen; Chen, Haitian; Ha, Young-geun; Wu, Chao; Sukcharoenchoke, Saowalak; Fu, Yue; Liu, Jun; Facchetti, Antonio; Marks, Tobin J; Thompson, Mark E; Zhou, Chongwu

2009-11-24

We report high-performance arsenic (As)-doped indium oxide (In(2)O(3)) nanowires for transparent electronics, including their implementation in transparent thin-film transistors (TTFTs) and transparent active-matrix organic light-emitting diode (AMOLED) displays. The As-doped In(2)O(3) nanowires were synthesized using a laser ablation process and then fabricated into TTFTs with indium-tin oxide (ITO) as the source, drain, and gate electrodes. The nanowire TTFTs on glass substrates exhibit very high device mobilities (approximately 1490 cm(2) V(-1) s(-1)), current on/off ratios (5.7 x 10(6)), steep subthreshold slopes (88 mV/dec), and a saturation current of 60 microA for a single nanowire. By using a self-assembled nanodielectric (SAND) as the gate dielectric, the device mobilities and saturation current can be further improved up to 2560 cm(2) V(-1) s(-1) and 160 microA, respectively. All devices exhibit good optical transparency (approximately 81% on average) in the visible spectral range. In addition, the nanowire TTFTs were utilized to control green OLEDs with varied intensities. Furthermore, a fully integrated seven-segment AMOLED display was fabricated with a good transparency of 40% and with each pixel controlled by two nanowire transistors. This work demonstrates that the performance enhancement possible by combining nanowire doping and self-assembled nanodielectrics enables silicon-free electronic circuitry for low power consumption, optically transparent, high-frequency devices assembled near room temperature.

Material selection indices for design of surgical instruments with long tubular shafts.

PubMed

Nelson, Carl A

2013-02-01

In any medical device design process, material selection plays an important role. For devices which sustain mechanical loading, strength and stiffness requirements can be significant drivers of the design. This paper examines the specific case of minimally invasive surgical instruments, including robotic instruments, having long, tubular shafts. Material properties-based selection indices are derived for achieving high performance of these devices in terms of strength and stiffness, and the use of these indices for informing the medical device design problem is illustrated.

Development and Implementation of the X.25 Protocol for the Universal Network Interface Device (UNID) II. Volume 1.

DTIC Science & Technology

1985-12-01

development of an improved Universal Network Interface Device (UNID II). The UNID II’s architecture was based on a preliminary design project at...interface device, performing all functions required ,: the multi-ring LAN. The device depicted by RADC’s studies would connect a highly variable group of host...used the ISO Open Systems Ilterconnection (OSI) seven layer model as the basic structure for data flow and program development . In 1982 Cuomo

A resistance ratio change phenomenon observed in Al doped ZnO (AZO)/Cu(In1-xGax)Se2/Mo resistive switching memory device

NASA Astrophysics Data System (ADS)

Guo, Tao; Sun, Bai; Mao, Shuangsuo; Zhu, Shouhui; Xia, Yudong; Wang, Hongyan; Zhao, Yong; Yu, Zhou

2018-03-01

In this work, the Cu(In1-xGax)Se2 (CIGS), Al doped ZnO (AZO) and Mo has been used for constructing a resistive switching device with AZO/CIGS/Mo sandwich structure grown on a transparent glass substrate. The device represents a high-performance memory characteristics under ambient temperature. In particularly, a resistance ratio change phenomenon have been observed in our device for the first time.

Special Issue: Planar Fully-Depleted SOI technology

NASA Astrophysics Data System (ADS)

Allibert, F.; Hiramoto, T.; Nguyen, B. Y.

2016-03-01

We are in the era of mobile computing with smart handheld devices and remote data storage "in the cloud," with devices that are almost always on and driven by needs of high data transmission rate, instant access/connection and long battery life. With all the ambitious requirements for better performance with lower power consumption, the SoC solution must also be cost-effective in order to capture the large, highly-competitive consumer mobile and wearable markets. The Fully-Depleted SOI device/circuit is a unique option that can satisfy all these requirements and has made tremendous progress in development for various applications and adoption by foundries, integrated device manufacturers (IDM), and fabless companies in the last 3 years.

Wide-Bandgap Semiconductor Devices for Automotive Applications

NASA Astrophysics Data System (ADS)

Sugimoto, M.; Ueda, H.; Uesugi, T.; Kachi, T.

2007-06-01

In this paper, we discuss requirements of power devices for automotive applications, especially hybrid vehicles and the development of GaN power devices at Toyota. We fabricated AlGaN/GaN HEMTs and measured their characteristics. The maximum breakdown voltage was over 600V. The drain current with a gate width of 31mm was over 8A. A thermograph image of the HEMT under high current operation shows the AlGaN/GaN HEMT operated at more than 300°C. And we confirmed the operation of a vertical GaN device. All the results of the GaN HEMTs are really promising to realize high performance and small size inverters for future automobiles.

3D Integration for Wireless Multimedia

NASA Astrophysics Data System (ADS)

Kimmich, Georg

The convergence of mobile phone, internet, mapping, gaming and office automation tools with high quality video and still imaging capture capability is becoming a strong market trend for portable devices. High-density video encode and decode, 3D graphics for gaming, increased application-software complexity and ultra-high-bandwidth 4G modem technologies are driving the CPU performance and memory bandwidth requirements close to the PC segment. These portable multimedia devices are battery operated, which requires the deployment of new low-power-optimized silicon process technologies and ultra-low-power design techniques at system, architecture and device level. Mobile devices also need to comply with stringent silicon-area and package-volume constraints. As for all consumer devices, low production cost and fast time-to-volume production is key for success. This chapter shows how 3D architectures can bring a possible breakthrough to meet the conflicting power, performance and area constraints. Multiple 3D die-stacking partitioning strategies are described and analyzed on their potential to improve the overall system power, performance and cost for specific application scenarios. Requirements and maturity of the basic process-technology bricks including through-silicon via (TSV) and die-to-die attachment techniques are reviewed. Finally, we highlight new challenges which will arise with 3D stacking and an outlook on how they may be addressed: Higher power density will require thermal design considerations, new EDA tools will need to be developed to cope with the integration of heterogeneous technologies and to guarantee signal and power integrity across the die stack. The silicon/wafer test strategies have to be adapted to handle high-density IO arrays, ultra-thin wafers and provide built-in self-test of attached memories. New standards and business models have to be developed to allow cost-efficient assembly and testing of devices from different silicon and technology providers.

Enhanced Performance of Field-Effect Transistors Based on Black Phosphorus Channels Reduced by Galvanic Corrosion of Al Overlayers.

PubMed

Lee, Sangik; Yoon, Chansoo; Lee, Ji Hye; Kim, Yeon Soo; Lee, Mi Jung; Kim, Wondong; Baik, Jaeyoon; Jia, Quanxi; Park, Bae Ho

2018-06-06

Two-dimensional (2D)-layered semiconducting materials with considerable band gaps are emerging as a new class of materials applicable to next-generation devices. Particularly, black phosphorus (BP) is considered to be very promising for next-generation 2D electrical and optical devices because of its high carrier mobility of 200-1000 cm 2 V -1 s -1 and large on/off ratio of 10 4 to 10 5 in field-effect transistors (FETs). However, its environmental instability in air requires fabrication processes in a glovebox filled with nitrogen or argon gas followed by encapsulation, passivation, and chemical functionalization of BP. Here, we report a new method for reduction of BP-channel devices fabricated without the use of a glovebox by galvanic corrosion of an Al overlayer. The reduction of BP induced by an anodic oxidation of Al overlayer is demonstrated through surface characterization of BP using atomic force microscopy, Raman spectroscopy, and X-ray photoemission spectroscopy along with electrical measurement of a BP-channel FET. After the deposition of an Al overlayer, the FET device shows a significantly enhanced performance, including restoration of ambipolar transport, high carrier mobility of 220 cm 2 V -1 s -1 , low subthreshold swing of 0.73 V/decade, and low interface trap density of 7.8 × 10 11 cm -2 eV -1 . These improvements are attributed to both the reduction of the BP channel and the formation of an Al 2 O 3 interfacial layer resulting in a high- k screening effect. Moreover, ambipolar behavior of our BP-channel FET device combined with charge-trap behavior can be utilized for implementing reconfigurable memory and neuromorphic computing applications. Our study offers a simple device fabrication process for BP-channel FETs with high performance using galvanic oxidation of Al overlayers.

Charge transport in strongly coupled quantum dot solids

NASA Astrophysics Data System (ADS)

Kagan, Cherie R.; Murray, Christopher B.

2015-12-01

The emergence of high-mobility, colloidal semiconductor quantum dot (QD) solids has triggered fundamental studies that map the evolution from carrier hopping through localized quantum-confined states to band-like charge transport in delocalized and hybridized states of strongly coupled QD solids, in analogy with the construction of solids from atoms. Increased coupling in QD solids has led to record-breaking performance in QD devices, such as electronic transistors and circuitry, optoelectronic light-emitting diodes, photovoltaic devices and photodetectors, and thermoelectric devices. Here, we review the advances in synthesis, assembly, ligand treatments and doping that have enabled high-mobility QD solids, as well as the experiments and theory that depict band-like transport in the QD solid state. We also present recent QD devices and discuss future prospects for QD materials and device design.

Charge transport in strongly coupled quantum dot solids.

PubMed

Kagan, Cherie R; Murray, Christopher B

2015-12-01

The emergence of high-mobility, colloidal semiconductor quantum dot (QD) solids has triggered fundamental studies that map the evolution from carrier hopping through localized quantum-confined states to band-like charge transport in delocalized and hybridized states of strongly coupled QD solids, in analogy with the construction of solids from atoms. Increased coupling in QD solids has led to record-breaking performance in QD devices, such as electronic transistors and circuitry, optoelectronic light-emitting diodes, photovoltaic devices and photodetectors, and thermoelectric devices. Here, we review the advances in synthesis, assembly, ligand treatments and doping that have enabled high-mobility QD solids, as well as the experiments and theory that depict band-like transport in the QD solid state. We also present recent QD devices and discuss future prospects for QD materials and device design.

Individual Characteristics and Unit Performance: A Review of Research and Methods

DTIC Science & Technology

1985-02-01

behavioral segments, improves performance. Simu- lation exercises , especially those employing new high-technology devices, provide surrogate...high-technology training simulation exercise MOB Military Occupational Specialty ORTT Operational Readiness Training Test-a field test REALTRAIN A...REAListic TRAINing simulation exercise SAM Surface-to-Air Missile SAT Scholastic Aptitude Test SQT Skill Qualification Test-an Army performance meas

A Practical Tablet-Based Hearing Aid Configuration as an Exemplar Project for Students of Instrumentation.

PubMed

Simeoni, Ricardo

2015-06-11

This paper presents the configuration and digital signal processing details of a tablet-based hearing aid transmitting wirelessly to standard earphones, whereby the tablet performs full sound processing rather than solely providing a means of setting adjustment by streaming to conventional digital hearing aids. The presented device confirms the recognized advantages of this tablet-based approach (e.g., in relation to cost, frequency domain processing, amplification range, versatility of functionality, component battery rechargeability), and flags the future wider-spread availability of such hearing solutions within mainstream healthcare. The use of a relatively high sampling frequency was found to be beneficial for device performance, while the use of optional off-the-shelf add-on components (e.g., data acquisition device, high fidelity microphone, compact wireless transmitter/receiver, wired headphones) are also discussed in relation to performance optimization. The easy-to-follow configuration utilized is well suited to student learning/research instrumentation projects within the health and biomedical sciences. In this latter regard, the presented device was pedagogically integrated into a flipped classroom approach for the teaching of bioinstrumentation within an Allied Health Sciences School, with the subsequent establishment of positive student engagement outcomes.

Critical Role of Interface and Crystallinity on the Performance and Photostability of Perovskite Solar Cell on Nickel Oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nie, Wanyi; Tsai, Hsinhan; Blancon, Jean -Christophe

Hybrid perovskites are on a trajectory toward realizing the most efficient single-junction, solution-processed photovoltaic devices. However, a critical issue is the limited understanding of the correlation between the degree of crystallinity and the emergent perovskite/hole (or electron) transport layer on device performance and photostability. Here, the controlled growth of hybrid perovskites on nickel oxide (NiO) is shown, resulting in the formation of thin films with enhanced crystallinity with characteristic peak width and splitting reminiscent of the tetragonal phase in single crystals. Photophysical and interface sensitive measurements reveal a reduced trap density at the perovskite/NiO interface in comparison with perovskites grownmore » on poly(3,4-ethylene dioxy thiophene) polystyrene sulfonate. Photovoltaic cells exhibit a high open circuit voltage (1.12 V), indicating a near-ideal energy band alignment. Moreover, photostability of photovoltaic devices up to 10-Suns is observed, which is a direct result of the superior crystallinity of perovskite thin films on NiO. Here, these results elucidate the critical role of the quality of the perovskite/hole transport layer interface in rendering high-performance and photostable optoelectronic devices.« less

Critical Role of Interface and Crystallinity on the Performance and Photostability of Perovskite Solar Cell on Nickel Oxide.

PubMed

Nie, Wanyi; Tsai, Hsinhan; Blancon, Jean-Christophe; Liu, Fangze; Stoumpos, Costas C; Traore, Boubacar; Kepenekian, Mikael; Durand, Olivier; Katan, Claudine; Tretiak, Sergei; Crochet, Jared; Ajayan, Pulickel M; Kanatzidis, MercouriG; Even, Jacky; Mohite, Aditya D

2018-02-01

Hybrid perovskites are on a trajectory toward realizing the most efficient single-junction, solution-processed photovoltaic devices. However, a critical issue is the limited understanding of the correlation between the degree of crystallinity and the emergent perovskite/hole (or electron) transport layer on device performance and photostability. Here, the controlled growth of hybrid perovskites on nickel oxide (NiO) is shown, resulting in the formation of thin films with enhanced crystallinity with characteristic peak width and splitting reminiscent of the tetragonal phase in single crystals. Photophysical and interface sensitive measurements reveal a reduced trap density at the perovskite/NiO interface in comparison with perovskites grown on poly(3,4-ethylene dioxy thiophene) polystyrene sulfonate. Photovoltaic cells exhibit a high open circuit voltage (1.12 V), indicating a near-ideal energy band alignment. Moreover, photostability of photovoltaic devices up to 10-Suns is observed, which is a direct result of the superior crystallinity of perovskite thin films on NiO. These results elucidate the critical role of the quality of the perovskite/hole transport layer interface in rendering high-performance and photostable optoelectronic devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Critical Role of Interface and Crystallinity on the Performance and Photostability of Perovskite Solar Cell on Nickel Oxide

DOE PAGES

Nie, Wanyi; Tsai, Hsinhan; Blancon, Jean -Christophe; ...

2017-12-11

Hybrid perovskites are on a trajectory toward realizing the most efficient single-junction, solution-processed photovoltaic devices. However, a critical issue is the limited understanding of the correlation between the degree of crystallinity and the emergent perovskite/hole (or electron) transport layer on device performance and photostability. Here, the controlled growth of hybrid perovskites on nickel oxide (NiO) is shown, resulting in the formation of thin films with enhanced crystallinity with characteristic peak width and splitting reminiscent of the tetragonal phase in single crystals. Photophysical and interface sensitive measurements reveal a reduced trap density at the perovskite/NiO interface in comparison with perovskites grownmore » on poly(3,4-ethylene dioxy thiophene) polystyrene sulfonate. Photovoltaic cells exhibit a high open circuit voltage (1.12 V), indicating a near-ideal energy band alignment. Moreover, photostability of photovoltaic devices up to 10-Suns is observed, which is a direct result of the superior crystallinity of perovskite thin films on NiO. Here, these results elucidate the critical role of the quality of the perovskite/hole transport layer interface in rendering high-performance and photostable optoelectronic devices.« less

High-response hybrid quantum dots- 2D conductor phototransistors: recent progress and perspectives

NASA Astrophysics Data System (ADS)

Sablon, Kimberly A.; Sergeev, Andrei; Najmaei, Sina; Dubey, Madan

2017-03-01

Having been inspired by the tremendous progress in material nanoscience and device nanoengineering, hybrid phototransistors combine solution processed colloidal semiconductor quantum dots (QDs) with graphene or two-dimensional (2D) semiconductor materials. Novel detectors demonstrate ultrahigh photoconductive gain, high and selective photoresponse, low noise, and very high responsivity in visible- and near-infrared ranges. The outstanding performance of phototransistors is primarily due to the strong, selective, and size tunable absorption of QDs and fast charge transfer in 2D high mobility conductors. However, the relatively small mobility of QD nanomaterials was a technological barrier, which limited the operating rate of devices. Very recent innovations in detector design and significant progress in QD ligand engineering provide effective tools for further qualitative improvements. This article reviews the recent progress in material science, nanophysics, and device engineering related to hybrid phototransistors. Detectors based on various QD nanomaterials and several 2D conductors are compared, and advantages and disadvantages of various nanomaterials for applications in hybrid phototransistors are identified. We also benchmark the experimental characteristics with model results that establish interrelations and tradeoffs between detector characteristics, such as responsivity, dark and noise currents, the photocarrier lifetime, response, and noise bandwidths. We have shown that the most recent phototransistors demonstrate performance limited by the fundamental generation recombination noise in high gain devices. Interrelation between the dynamic range of the detector and the detector sensitivity is discussed. The review is concluded with a brief discussion of the remaining challenges and possible significant improvements in the performance of hybrid phototransistors.

Solid-State Thin-Film Supercapacitors with Ultrafast Charge/Discharge Based on N-Doped-Carbon-Tubes/Au-Nanoparticles-Doped-MnO2 Nanocomposites.

PubMed

Lv, Qiying; Wang, Shang; Sun, Hongyu; Luo, Jun; Xiao, Jian; Xiao, JunWu; Xiao, Fei; Wang, Shuai

2016-01-13

Although carbonaceous materials possess long cycle stability and high power density, their low-energy density greatly limits their applications. On the contrary, metal oxides are promising pseudocapacitive electrode materials for supercapacitors due to their high-energy density. Nevertheless, poor electrical conductivity of metal oxides constitutes a primary challenge that significantly limits their energy storage capacity. Here, an advanced integrated electrode for high-performance pseudocapacitors has been designed by growing N-doped-carbon-tubes/Au-nanoparticles-doped-MnO2 (NCTs/ANPDM) nanocomposite on carbon fabric. The excellent electrical conductivity and well-ordered tunnels of NCTs together with Au nanoparticles of the electrode cause low internal resistance, good ionic contact, and thus enhance redox reactions for high specific capacitance of pure MnO2 in aqueous electrolyte, even at high scan rates. A prototype solid-state thin-film symmetric supercapacitor (SSC) device based on NCTs/ANPDM exhibits large energy density (51 Wh/kg) and superior cycling performance (93% after 5000 cycles). In addition, the asymmetric supercapacitor (ASC) device assembled from NCTs/ANPDM and Fe2O3 nanorods demonstrates ultrafast charge/discharge (10 V/s), which is among the best reported for solid-state thin-film supercapacitors with both electrodes made of metal oxide electroactive materials. Moreover, its superior charge/discharge behavior is comparable to electrical double layer type supercapacitors. The ASC device also shows superior cycling performance (97% after 5000 cycles). The NCTs/ANPDM nanomaterial demonstrates great potential as a power source for energy storage devices.