Neutron and gamma irradiation effects on power semiconductor switches

NASA Technical Reports Server (NTRS)

Schwarze, G. E.; Frasca, A. J.

1990-01-01

The performance characteristics of high-power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Neutron and gamma irradiation effects on power semiconductor switches

NASA Technical Reports Server (NTRS)

Schwarze, G. E.; Frasca, A. J.

1990-01-01

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

High power operation of a nitrogen doped, vanadium compensated, 6H-SiC extrinsic photoconductive switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, J. S.

2014-04-28

We report the high power operation of nitrogen doped, vanadium compensated, 6H-SiC, extrinsic photoconductive switches with improved vanadium and nitrogen dopant density. Photoconductive switching tests are performed on 1 mm thick, m-plane, switch substrates at switch voltage and currents up to 17 kV and 1.5 kA, respectively. Sub-ohm minimum switch on resistance is achieved for peak optical intensities ≥35 MW/cm{sup 2} at 532 nm applied to the switch facet. A reduction of greater than nine orders of magnitude is observed in switch material resistivity between dark and illuminated states.

A High Isolation Series-Shunt RF MEMS Switch

PubMed Central

Yu, Yuan-Wei; Zhu, Jian; Jia, Shi-Xing; Shi, Yi

2009-01-01

This paper presents a wide band compact high isolation microelectromechanical systems (MEMS) switch implemented on a coplanar waveguide (CPW) with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24.8 dB at 6 GHz. The measured average pull-in voltage is 28 V and switching time is 47 μs. In order to shorten design period of the high isolation switch, a structure-based small-signal model for the 3-port ohmic MEMS switch is developed and parameters are extracted from the measured results. Then a high isolation switch has been developed where each 3-port ohmic MEMS switch is closely located. The agreement of the measured and modeled radio frequency (RF) performance demonstrates the validity of the electrical equivalent model. Measurements of the series-shunt switch indicate an outstanding isolation of more than 40 dB and a low insertion loss of 0.35 dB from DC to 12 GHz with total chip size of 1 mm × 1.2 mm. PMID:22408535

Micromechanical Switches on GaAs for Microwave Applications

NASA Technical Reports Server (NTRS)

Randall, John N.; Goldsmith, Chuck; Denniston, David; Lin, Tsen-Hwang

1995-01-01

In this presentation, we describe the fabrication of micro-electro-mechanical system (MEMS) devices, in particular, of low-frequency multi-element electrical switches using SiO2 cantilevers. The switches discussed are related to micromechanical membrane structures used to perform switching of optical signals on silicon substrates. These switches use a thin metal membrane which is actuated by an electrostatic potential, causing the switch to make or break contact. The advantages include: superior isolation, high power handling capabilities, high radiation hardening, very low power operations, and the ability to integrate onto GaAs monolithic microwave integrated circuit (MMIC) chips.

Low-voltage high-reliability MEMS switch for millimeter wave 5G applications

NASA Astrophysics Data System (ADS)

Shekhar, Sudhanshu; Vinoy, K. J.; Ananthasuresh, G. K.

2018-07-01

Lack of reliability of radio-frequency microelectromechanical systems (RF MEMS) switches has inhibited their commercial success. Dielectric stiction/breakdown and mechanical shock due to high actuation voltage are common impediments in capacitive MEMS switches. In this work, we report low-actuation voltage RF MEMS switch and its reliability test. Experimental characterization of fabricated devices demonstrate that proposed MEMS switch topology needs very low voltage (4.8 V) for actuation. The mechanical resonant frequency, f 0, quality factor, Q, and switching time are measured to be 8.35 kHz, 1.2, and 33 microsecond, respectively. These MEMS switches have high reliability in terms of switching cycles. Measurements are performed using pulse waveform of magnitude of 6 V under hot-switching condition. Temperature measurement results confirm that the reported switch topology has good thermal stability. The robustness in terms of the measured pull-in voltage shows a variation of 0.08 V °C‑1. Lifetime measurement results after 10 million switching cycles demonstrate insignificant change in the RF performance without any failure. Experimental results show that low voltage improves the lifetime. Low insertion loss (less than 0.6 dB) and improved isolation (above 40 dB) in the frequency range up to 60 GHz have been reported. Measured RF characteristics in the frequency range from 10 MHz to 60 GHz support that these MEMS switches are favorable choice for mm-wave 5G applications.

High peak and high average radiofrequency power transmit/receive switch for thermal magnetic resonance.

PubMed

Ji, Yiyi; Hoffmann, Werner; Pham, Michal; Dunn, Alexander E; Han, Haopeng; Özerdem, Celal; Waiczies, Helmar; Rohloff, Michael; Endemann, Beate; Boyer, Cyrille; Lim, May; Niendorf, Thoralf; Winter, Lukas

2018-04-01

To study the role of temperature in biological systems, diagnostic contrasts and thermal therapies, RF pulses for MR spin excitation can be deliberately used to apply a thermal stimulus. This application requires dedicated transmit/receive (Tx/Rx) switches that support high peak powers for MRI and high average powers for RF heating. To meet this goal, we propose a high-performance Tx/Rx switch based on positive-intrinsic-negative diodes and quarter-wavelength (λ/4) stubs. The λ/4 stubs in the proposed Tx/Rx switch design route the transmitted RF signal directly to the RF coil/antenna without passing through any electronic components (e.g., positive-intrinsic-negative diodes). Bench measurements, MRI, MR thermometry, and RF heating experiments were performed at f = 297 MHz (B 0  = 7 T) to examine the characteristics and applicability of the switch. The proposed design provided an isolation of -35.7dB/-41.5dB during transmission/reception. The insertion loss was -0.41dB/-0.27dB during transmission/reception. The switch supports high peak (3.9 kW) and high average (120 W) RF powers for MRI and RF heating at f = 297 MHz. High-resolution MRI of the wrist yielded image quality competitive with that obtained with a conventional Tx/Rx switch. Radiofrequency heating in phantom monitored by MR thermometry demonstrated the switch applicability for thermal modulation. Upon these findings, thermally activated release of a model drug attached to thermoresponsive polymers was demonstrated. The high-power Tx/Rx switch enables thermal MR applications at 7 T, contributing to the study of the role of temperature in biological systems and diseases. All design files of the switch will be made available open source at www.opensourceimaging.org. © 2018 International Society for Magnetic Resonance in Medicine.

Multimodal information Management: Evaluation of Auditory and Haptic Cues for NextGen Communication Displays

NASA Technical Reports Server (NTRS)

Begault, Durand R.; Bittner, Rachel M.; Anderson, Mark R.

2012-01-01

Auditory communication displays within the NextGen data link system may use multiple synthetic speech messages replacing traditional ATC and company communications. The design of an interface for selecting amongst multiple incoming messages can impact both performance (time to select, audit and release a message) and preference. Two design factors were evaluated: physical pressure-sensitive switches versus flat panel "virtual switches", and the presence or absence of auditory feedback from switch contact. Performance with stimuli using physical switches was 1.2 s faster than virtual switches (2.0 s vs. 3.2 s); auditory feedback provided a 0.54 s performance advantage (2.33 s vs. 2.87 s). There was no interaction between these variables. Preference data were highly correlated with performance.

Ultra high voltage MOS controlled 4H-SiC power switching devices

NASA Astrophysics Data System (ADS)

Ryu, S.; Capell, C.; Van Brunt, E.; Jonas, C.; O'Loughlin, M.; Clayton, J.; Lam, K.; Pala, V.; Hull, B.; Lemma, Y.; Lichtenwalner, D.; Zhang, Q. J.; Richmond, J.; Butler, P.; Grider, D.; Casady, J.; Allen, S.; Palmour, J.; Hinojosa, M.; Tipton, C. W.; Scozzie, C.

2015-08-01

Ultra high voltage (UHV, >15 kV) 4H-silicon carbide (SiC) power devices have the potential to significantly improve the system performance, reliability, and cost of energy conversion systems by providing reduced part count, simplified circuit topology, and reduced switching losses. In this paper, we compare the two MOS based UHV 4H-SiC power switching devices; 15 kV 4H-SiC MOSFETs and 15 kV 4H-SiC n-IGBTs. The 15 kV 4H-SiC MOSFET shows a specific on-resistance of 204 mΩ cm2 at 25 °C, which increased to 570 mΩ cm2 at 150 °C. The 15 kV 4H-SiC MOSFET provides low, temperature-independent, switching losses which makes the device more attractive for applications that require higher switching frequencies. The 15 kV 4H-SiC n-IGBT shows a significantly lower forward voltage drop (VF), along with reasonable switching performance, which make it a very attractive device for high voltage applications with lower switching frequency requirements. An electrothermal analysis showed that the 15 kV 4H-SiC n-IGBT outperforms the 15 kV 4H-SiC MOSFET for applications with switching frequencies of less than 5 kHz. It was also shown that the use of a carrier storage layer (CSL) can significantly improve the conduction performance of the 15 kV 4H-SiC n-IGBTs.

Nanoionics-Based Switches for Radio-Frequency Applications

NASA Technical Reports Server (NTRS)

Nessel, James; Lee, Richard

2010-01-01

Nanoionics-based devices have shown promise as alternatives to microelectromechanical systems (MEMS) and semiconductor diode devices for switching radio-frequency (RF) signals in diverse systems. Examples of systems that utilize RF switches include phase shifters for electronically steerable phased-array antennas, multiplexers, cellular telephones and other radio transceivers, and other portable electronic devices. Semiconductor diode switches can operate at low potentials (about 1 to 3 V) and high speeds (switching times of the order of nanoseconds) but are characterized by significant insertion loss, high DC power consumption, low isolation, and generation of third-order harmonics and intermodulation distortion (IMD). MEMS-based switches feature low insertion loss (of the order of 0.2 dB), low DC power consumption (picowatts), high isolation (>30 dB), and low IMD, but contain moving parts, are not highly reliable, and must be operated at high actuation potentials (20 to 60 V) generated and applied by use of complex circuitry. In addition, fabrication of MEMS is complex, involving many processing steps. Nanoionics-based switches offer the superior RF performance and low power consumption of MEMS switches, without need for the high potentials and complex circuitry necessary for operation of MEMS switches. At the same time, nanoionics-based switches offer the high switching speed of semiconductor devices. Also, like semiconductor devices, nanoionics-based switches can be fabricated relatively inexpensively by use of conventional integrated-circuit fabrication techniques. More over, nanoionics-based switches have simple planar structures that can easily be integrated into RF power-distribution circuits.

Super Nonlinear Electrodeposition-Diffusion-Controlled Thin-Film Selector.

PubMed

Ji, Xinglong; Song, Li; He, Wei; Huang, Kejie; Yan, Zhiyuan; Zhong, Shuai; Zhang, Yishu; Zhao, Rong

2018-03-28

Selector elements with high nonlinearity are an indispensable part in constructing high density, large-scale, 3D stackable emerging nonvolatile memory and neuromorphic network. Although significant efforts have been devoted to developing novel thin-film selectors, it remains a great challenge in achieving good switching performance in the selectors to satisfy the stringent electrical criteria of diverse memory elements. In this work, we utilized high-defect-density chalcogenide glass (Ge 2 Sb 2 Te 5 ) in conjunction with high mobility Ag element (Ag-GST) to achieve a super nonlinear selective switching. A novel electrodeposition-diffusion dynamic selector based on Ag-GST exhibits superior selecting performance including excellent nonlinearity (<5 mV/dev), ultra-low leakage (<10 fA), and bidirectional operation. With the solid microstructure evidence and dynamic analyses, we attributed the selective switching to the competition between the electrodeposition and diffusion of Ag atoms in the glassy GST matrix under electric field. A switching model is proposed, and the in-depth understanding of the selective switching mechanism offers an insight of switching dynamics for the electrodeposition-diffusion-controlled thin-film selector. This work opens a new direction of selector designs by combining high mobility elements and high-defect-density chalcogenide glasses, which can be extended to other materials with similar properties.

Dissociable effects of game elements on motivation and cognition in a task-switching training in middle childhood

PubMed Central

Dörrenbächer, Sandra; Müller, Philipp M.; Tröger, Johannes; Kray, Jutta

2014-01-01

Although motivational reinforcers are often used to enhance the attractiveness of trainings of cognitive control in children, little is known about how such motivational manipulations of the setting contribute to separate gains in motivation and cognitive-control performance. Here we provide a framework for systematically investigating the impact of a motivational video-game setting on the training motivation, the task performance, and the transfer success in a task-switching training in middle-aged children (8–11 years of age). We manipulated both the type of training (low-demanding/single-task training vs. high-demanding/task-switching training) as well as the motivational setting (low-motivational/without video-game elements vs. high-motivational/with video-game elements) separately from another. The results indicated that the addition of game elements to a training setting enhanced the intrinsic interest in task practice, independently of the cognitive demands placed by the training type. In the task-switching group, the high-motivational training setting led to an additional enhancement of task and switching performance during the training phase right from the outset. These motivation-induced benefits projected onto the switching performance in a switching situation different from the trained one (near-transfer measurement). However, in structurally dissimilar cognitive tasks (far-transfer measurement), the motivational gains only transferred to the response dynamics (speed of processing). Hence, the motivational setting clearly had a positive impact on the training motivation and on the paradigm-specific task-switching abilities; it did not, however, consistently generalize on broad cognitive processes. These findings shed new light on the conflation of motivation and cognition in childhood and may help to refine guidelines for designing adequate training interventions. PMID:25431564

Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grezes, C.; Alzate, J. G.; Cai, X.

2016-01-04

We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memorymore » and logic integrated circuits.« less

The design and testing of a novel mechanomyogram-driven switch controlled by small eyebrow movements

PubMed Central

2010-01-01

Background Individuals with severe physical disabilities and minimal motor behaviour may be unable to use conventional mechanical switches for access. These persons may benefit from access technologies that harness the volitional activity of muscles. In this study, we describe the design and demonstrate the performance of a binary switch controlled by mechanomyogram (MMG) signals recorded from the frontalis muscle during eyebrow movements. Methods Muscle contractions, detected in real-time with a continuous wavelet transform algorithm, were used to control a binary switch for computer access. The automatic selection of scale-specific thresholds reduced the effect of artefact, such as eye blinks and head movement, on the performance of the switch. Switch performance was estimated by cued response-tests performed by eleven participants (one with severe physical disabilities). Results The average sensitivity and specificity of the switch was 99.7 ± 0.4% and 99.9 ± 0.1%, respectively. The algorithm performance was robust against typical participant movement. Conclusions The results suggest that the frontalis muscle is a suitable site for controlling the MMG-driven switch. The high accuracies combined with the minimal requisite effort and training show that MMG is a promising binary control signal. Further investigation of the potential benefits of MMG-control for the target population is warranted. PMID:20492680

The design and testing of a novel mechanomyogram-driven switch controlled by small eyebrow movements.

PubMed

Alves, Natasha; Chau, Tom

2010-05-21

Individuals with severe physical disabilities and minimal motor behaviour may be unable to use conventional mechanical switches for access. These persons may benefit from access technologies that harness the volitional activity of muscles. In this study, we describe the design and demonstrate the performance of a binary switch controlled by mechanomyogram (MMG) signals recorded from the frontalis muscle during eyebrow movements. Muscle contractions, detected in real-time with a continuous wavelet transform algorithm, were used to control a binary switch for computer access. The automatic selection of scale-specific thresholds reduced the effect of artefact, such as eye blinks and head movement, on the performance of the switch. Switch performance was estimated by cued response-tests performed by eleven participants (one with severe physical disabilities). The average sensitivity and specificity of the switch was 99.7 +/- 0.4% and 99.9 +/- 0.1%, respectively. The algorithm performance was robust against typical participant movement. The results suggest that the frontalis muscle is a suitable site for controlling the MMG-driven switch. The high accuracies combined with the minimal requisite effort and training show that MMG is a promising binary control signal. Further investigation of the potential benefits of MMG-control for the target population is warranted.

Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching

NASA Astrophysics Data System (ADS)

Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun

2018-06-01

Atomic switches are considered to be building blocks for future non-volatile data storage and internet of things. However, obtaining device structures capable of ultrahigh density data storage, high endurance, and long data retention, and more importantly, understanding the switching mechanisms are still a challenge for atomic switches. Here, we achieved improved resistive switching performance in a bilayer structure containing aluminum oxide, with an oxygen-deficient oxide as the top switching layer and stoichiometric oxide as the bottom switching layer, using atomic layer deposition. This bilayer device showed a high on/off ratio (105) with better endurance (∼2000 cycles) and longer data retention (104 s) than single-oxide layers. In addition, depending on the compliance current, the bilayer device could be operated in four different resistance states. Furthermore, the depth profiles of the hourglass-shaped conductive filament of the bilayer device was observed by conductive atomic force microscopy.

Ultra-compact Marx-type high-voltage generator

DOEpatents

Goerz, David A.; Wilson, Michael J.

2000-01-01

An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaOx Thin Film

PubMed Central

Kyu Yang, Min; Ju, Hyunsu; Hwan Kim, Gun; Lee, Jeon-Kook; Ryu, Han-Cheol

2015-01-01

A Ta/TaOx/Pt stacked capacitor-like device for resistive switching was fabricated and examined. The tested device demonstrated stable resistive switching characteristics including uniform distribution of resistive switching operational parameters, highly promising endurance, and retention properties. To reveal the resistive switching mechanism of the device, micro structure analysis using high-resolution transmission electron microscope (HR-TEM) was performed. From the observation results, two different phases of Ta-metal clusters of cubic α-Ta and tetragonal β-Ta were founded in the amorphous TaOx mother-matrix after the device was switched from high resistance state (HRS) to low resistance state (LRS) by externally applied voltage bias. The observed Ta metal clusters unveiled the origin of the electric conduction paths in the TaOx thin film at the LRS. PMID:26365532

Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaOx Thin Film

NASA Astrophysics Data System (ADS)

Kyu Yang, Min; Ju, Hyunsu; Hwan Kim, Gun; Lee, Jeon-Kook; Ryu, Han-Cheol

2015-09-01

A Ta/TaOx/Pt stacked capacitor-like device for resistive switching was fabricated and examined. The tested device demonstrated stable resistive switching characteristics including uniform distribution of resistive switching operational parameters, highly promising endurance, and retention properties. To reveal the resistive switching mechanism of the device, micro structure analysis using high-resolution transmission electron microscope (HR-TEM) was performed. From the observation results, two different phases of Ta-metal clusters of cubic α-Ta and tetragonal β-Ta were founded in the amorphous TaOx mother-matrix after the device was switched from high resistance state (HRS) to low resistance state (LRS) by externally applied voltage bias. The observed Ta metal clusters unveiled the origin of the electric conduction paths in the TaOx thin film at the LRS.

Zero-voltage DC/DC converter with asymmetric pulse-width modulation for DC micro-grid system

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren

2018-04-01

This paper presents a zero-voltage switching DC/DC converter for DC micro-grid system applications. The proposed circuit includes three half-bridge circuit cells connected in primary-series and secondary-parallel in order to lessen the voltage rating of power switches and current rating of rectifier diodes. Thus, low voltage stress of power MOSFETs can be adopted for high-voltage input applications with high switching frequency operation. In order to achieve low switching losses and high circuit efficiency, asymmetric pulse-width modulation is used to turn on power switches at zero voltage. Flying capacitors are used between each circuit cell to automatically balance input split voltages. Therefore, the voltage stress of each power switch is limited at Vin/3. Finally, a prototype is constructed and experiments are provided to demonstrate the circuit performance.

Design and evaluation of a DAMQ multiprocessor network with self-compacting buffers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, J.; O`Krafka, B.W.O.; Vassiliadis, S.

1994-12-31

This paper describes a new approach to implement Dynamically Allocated Multi-Queue (DAMQ) switching elements using a technique called ``self-compacting buffers``. This technique is efficient in that the amount of hardware required to manage the buffers is relatively small; it offers high performance since it is an implementation of a DAMQ. The first part of this paper describes the self-compacting buffer architecture in detail, and compares it against a competing DAMQ switch design. The second part presents extensive simulation results comparing the performance of a self compacting buffer switch against an ideal switch including several examples of k-ary n-cubes and deltamore » networks. In addition, simulation results show how the performance of an entire network can be quickly and accurately approximated by simulating just a single switching element.« less

Demonstration of the feasibility of large-port-count optical switching using a hybrid Mach-Zehnder interferometer-semiconductor optical amplifier switch module in a recirculating loop.

PubMed

Cheng, Q; Wonfor, A; Wei, J L; Penty, R V; White, I H

2014-09-15

For what we believe is the first time, the feasibility of large-port-count nanosecond-reconfiguration-time optical switches is demonstrated using a hybrid approach, where Mach-Zehnder interferometric (MZI) switches provide low-loss, high-speed routing with short semiconductor optical amplifiers (SOAs) being integrated to enhance extinction. By repeatedly passing signals through a monolithic hybrid dilated 2×2 switch module in a recirculating loop, the potential performance of high-port-count switches using the hybrid approach is demonstrated. Experimentally, a single pass switch penalty of only 0.1 dB is demonstrated for the 2×2 module, while even after seven passes through the switch, equivalent to a 128×128 router, a penalty of only 2.4 dB is recorded at a data rate of 10 Gb/s.

Analysis of optical route in a micro high-speed magneto-optic switch

NASA Astrophysics Data System (ADS)

Weng, Zihua; Yang, Guoguang; Huang, Yuanqing; Chen, Zhimin; Zhu, Yun; Wu, Jinming; Lin, Shufen; Mo, Weiping

2005-02-01

A novel micro high-speed 2x2 magneto-optic switch and its optical route, which is used in high-speed all-optical communication network, is designed and analyzed in this paper. The study of micro high-speed magneto-optic switch mainly involves the optical route and high-speed control technique design. The optical route design covers optical route design of polarization in optical switch, the performance analysis and material selection of magneto-optic crystal and magnetic path design in Faraday rotator. The research of high-speed control technique involves the study of nanosecond pulse generator, high-speed magnetic field and its control technique etc. High-speed current transients from nanosecond pulse generator are used to switch the magnetization of the magneto-optic crystal, which propagates a 1550nm optical beam. The optical route design schemes and electronic circuits of high-speed control technique are both simulated on computer and test by the experiments respectively. The experiment results state that the nanosecond pulse generator can output the pulse with rising edge time 3~35ns, voltage amplitude 10~90V and pulse width 10~100ns. Under the control of CPU singlechip, the optical beam can be stably switched and the switching time is less than 1μs currently.

High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

PubMed Central

Khaira, Navjot

2014-01-01

This paper presents a novel design of single-pole four-throw (SP4T) RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm2. The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt or capacitive switches have been used in each port to improve the isolation for higher frequencies. The proposed SP4T switch provides excellent RF performances with isolation better than 70.64 dB and insertion loss less than 0.72 dB for X-band between the input port and each output port. PMID:24711730

High-performance and power-efficient 2×2 optical switch on Silicon-on-Insulator.

PubMed

Han, Zheng; Moille, Grégory; Checoury, Xavier; Bourderionnet, Jérôme; Boucaud, Philippe; De Rossi, Alfredo; Combrié, Sylvain

2015-09-21

A compact (15µm × 15µm) and highly-optimized 2×2 optical switch is demonstrated on a CMOS-compatible photonic crystal technology. On-chip insertion loss are below 1 dB, static and dynamic contrast are 40 dB and >20 dB respectively. Owing to efficient thermo-optic design, the power consumption is below 3 mW while the switching time is 1 µs.

Neural network for control of rearrangeable Clos networks.

PubMed

Park, Y K; Cherkassky, V

1994-09-01

Rapid evolution in the field of communication networks requires high speed switching technologies. This involves a high degree of parallelism in switching control and routing performed at the hardware level. The multistage crossbar networks have always been attractive to switch designers. In this paper a neural network approach to controlling a three-stage Clos network in real time is proposed. This controller provides optimal routing of communication traffic requests on a call-by-call basis by rearranging existing connections, with a minimum length of rearrangement sequence so that a new blocked call request can be accommodated. The proposed neural network controller uses Paull's rearrangement algorithm, along with the special (least used) switch selection rule in order to minimize the length of rearrangement sequences. The functional behavior of our model is verified by simulations and it is shown that the convergence time required for finding an optimal solution is constant, regardless of the switching network size. The performance is evaluated for random traffic with various traffic loads. Simulation results show that applying the least used switch selection rule increases the efficiency in switch rearrangements, reducing the network convergence time. The implementation aspects are also discussed to show the feasibility of the proposed approach.

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

NASA Astrophysics Data System (ADS)

Park, Tae Hyung; Song, Seul Ji; Kim, Hae Jin; Kim, Soo Gil; Chung, Suock; Kim, Beom Yong; Lee, Kee Jeung; Kim, Kyung Min; Choi, Byung Joon; Hwang, Cheol Seong

2015-11-01

Resistance switching (RS) devices with ultra-thin Ta2O5 switching layer (0.5-2.0 nm) with a cell diameter of 28 nm were fabricated. The performance of the devices was tested by voltage-driven current—voltage (I-V) sweep and closed-loop pulse switching (CLPS) tests. A Ta layer was placed beneath the Ta2O5 switching layer to act as an oxygen vacancy reservoir. The device with the smallest Ta2O5 thickness (0.5 nm) showed normal switching properties with gradual change in resistance in I-V sweep or CLPS and high reliability. By contrast, other devices with higher Ta2O5 thickness (1.0-2.0 nm) showed abrupt switching with several abnormal behaviours, degraded resistance distribution, especially in high resistance state, and much lower reliability performance. A single conical or hour-glass shaped double conical conducting filament shape was conceived to explain these behavioural differences that depended on the Ta2O5 switching layer thickness. Loss of oxygen via lateral diffusion to the encapsulating Si3N4/SiO2 layer was suggested as the main degradation mechanism for reliability, and a method to improve reliability was also proposed.

High voltage DC switchgear development for multi-kW space power system: Aerospace technology development of three types of solid state power controllers for 200-1100VDC with current ratings of 25, 50, and 80 amperes with one type utilizing an electromechanical device

NASA Technical Reports Server (NTRS)

Billings, W. W.

1981-01-01

Three types of solid state power controllers (SSPC's) for high voltage, high power DC system applications were developed. The first type utilizes a SCR power switch. The second type employes an electromechanical power switch element with solid state commutation. The third type utilizes a transistor power switch. Significant accomplishments include high operating efficiencies, fault clearing, high/low temperature performance and vacuum operation.

STABLE ISOTOPE SIGNATURES OF MUCUS OF STEELHEAD TROUT IN A CONTROLLED DIET SWITCH EXPERIMENT

EPA Science Inventory

Our work has shown that fish mucus can serve as a very rapid indicator of diet switching in fish. We performed diet switching studies of steelhead trout in a controlled hatchery setting using specially formulated low delta 15N signature and high delta 15N signature diets. To ou...

Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching.

PubMed

Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun

2018-06-08

Atomic switches are considered to be building blocks for future non-volatile data storage and internet of things. However, obtaining device structures capable of ultrahigh density data storage, high endurance, and long data retention, and more importantly, understanding the switching mechanisms are still a challenge for atomic switches. Here, we achieved improved resistive switching performance in a bilayer structure containing aluminum oxide, with an oxygen-deficient oxide as the top switching layer and stoichiometric oxide as the bottom switching layer, using atomic layer deposition. This bilayer device showed a high on/off ratio (10 5 ) with better endurance (∼2000 cycles) and longer data retention (10 4 s) than single-oxide layers. In addition, depending on the compliance current, the bilayer device could be operated in four different resistance states. Furthermore, the depth profiles of the hourglass-shaped conductive filament of the bilayer device was observed by conductive atomic force microscopy.

Microfluidic T-form mixer utilizing switching electroosmotic flow.

PubMed

Lin, Che-Hsin; Fu, Lung-Ming; Chien, Yu-Sheng

2004-09-15

This paper presents a microfluidic T-form mixer utilizing alternatively switching electroosmotic flow. The microfluidic device is fabricated on low-cost glass slides using a simple and reliable fabrication process. A switching DC field is used to generate an electroosmotic force which simultaneously drives and mixes the fluid samples. The proposed design eliminates the requirements for moving parts within the microfluidic device and delicate external control systems. Two operation modes, namely, a conventional switching mode and a novel pinched switching mode, are presented. Computer simulation is employed to predict the mixing performance attainable in both operation modes. The simulation results are then compared to those obtained experimentally. It is shown that a mixing performance as high as 97% can be achieved within a mixing distance of 1 mm downstream from the T-junction when a 60 V/cm driving voltage and a 2-Hz switching frequency are applied in the pinched switching operation mode. This study demonstrates how the driving voltage and switching frequency can be optimized to yield an enhanced mixing performance. The novel methods presented in this study provide a simple solution to mixing problems in the micro-total-analysis-systems field.

A cross-stacked plasmonic nanowire network for high-contrast femtosecond optical switching.

PubMed

Lin, Yuanhai; Zhang, Xinping; Fang, Xiaohui; Liang, Shuyan

2016-01-21

We report an ultrafast optical switching device constructed by stacking two layers of gold nanowires into a perpendicularly crossed network, which works at a speed faster than 280 fs with an on/off modulation depth of about 22.4%. The two stacks play different roles in enhancing consistently the optical switching performance due to their different dependence on the polarization of optical electric fields. The cross-plasmon resonance based on the interaction between the perpendicularly stacked gold nanowires and its Fano-coupling with Rayleigh anomaly is the dominant mechanism for such a high-contrast optical switching device.

CMOS-Compatible SOI MESFETS for Radiation-Hardened DC-to-DC Converters

NASA Technical Reports Server (NTRS)

Thornton, Trevor; Lepkowski, William; Wilk, Seth

2013-01-01

A radiation-tolerant transistor switch has been developed that can operate between 196 and +150 C for DC-to-DC power conversion applications. A prototype buck regulator component was demonstrated to be performing well after a total ionizing dose of 300 krad(Si). The prototype buck converters showed good efficiencies at ultra-high switching speeds in the range of 1 to 10 MHz. Such high switching frequency will enable smaller, lighter buck converters to be developed as part of the next project. Switching regulators are widely used in commercial applications including portable consumer electronics.

AEA Cell-Bypass-Switch Activation: An Update

NASA Technical Reports Server (NTRS)

Keys, Denney; Rao, Gopalakrishna M.; Wannemacher, Harry

2002-01-01

The objectives of this project included the following: (1) verify the performance of AEA cell bypass protection device (CBPD) under simulated EOS-Aqua/Aura flight hardware configuration; (2) assess the safety of the hardware under an inadvertent firing of CBPD switch, as well as the closing of CBPD; and (3) confirm that the mode of operation of CBPD switch is the formation of a continuous low impedance path (a homogeneous low melting point alloy). The nominal performance of AEA CBPD under flight operating conditions (vacuum except zero-G, and high impedance cell) has been demonstrated. There is no evidence of cell rupture or excessive heat production during or after CBPD switch activation under simulated high cell impedance (open-circuit cell failure mode). The formation of a continuous low impedance path (a homogeneous low melting point alloy) has been confirmed.

MCT/MOSFET Switch

NASA Technical Reports Server (NTRS)

Rippel, Wally E.

1990-01-01

Metal-oxide/semiconductor-controlled thyristor (MCT) and metal-oxide/semiconductor field-effect transistor (MOSFET) connected in switching circuit to obtain better performance. Offers high utilization of silicon, low forward voltage drop during "on" period of operating cycle, fast turnon and turnoff, and large turnoff safe operating area. Includes ability to operate at high temperatures, high static blocking voltage, and ease of drive.

Investigation of a compact coaxially fed switched oscillator.

PubMed

Wang, Yuwei; Chen, Dongqun; Zhang, Jiande; Cao, Shengguang; Li, Da; Liu, Chebo

2013-09-01

To generate a relative high frequency mesoband microwave, a compact coaxially fed transmission line switched oscillator with high voltage capability is investigated. The characteristic impedance and voltage capability of the low impedance transmission line (LITL) have been analyzed. It is shown that the working voltage of the oscillator can reach up to 200 kV when it is filled by pressurized nitrogen and charged by a nanosecond driving source. By utilizing a commercial electromagnetic simulation code, the transient performance of the switched oscillator with a lumped resistance load is simulated. It is illustrated that the center frequency of the output signal reaches up to ~0.6 GHz when the spark gap practically closes with a single channel. Besides, the influence of the closing mode and rapidity of the spark gap, the permittivity of the insulator at the output end of the LITL, and the load impedance on the transient performance of the designed oscillator has been analyzed in quantification. Finally, the good transient performance of the switched oscillator has been preliminarily proved by the experiment.

Effect of video-game experience and position of flight stick controller on simulated-flight performance.

PubMed

Cho, Bo-Keun; Aghazadeh, Fereydoun; Al-Qaisi, Saif

2012-01-01

The purpose of this study was to determine the effects of video-game experience and flight-stick position on flying performance. The study divided participants into 2 groups; center- and side-stick groups, which were further divided into high and low level of video-game experience subgroups. The experiment consisted of 7 sessions of simulated flying, and in the last session, the flight stick controller was switched to the other position. Flight performance was measured in terms of the deviation of heading, altitude, and airspeed from their respective requirements. Participants with high experience in video games performed significantly better (p < .001) than the low-experienced group. Also, participants performed significantly better (p < .001) with the center-stick than the side-stick. When the side-stick controller was switched to the center-stick position, performance scores continued to increase (0.78 %). However, after switching from a center- to a side-stick controller, performance scores decreased (4.8%).

Zero-static power radio-frequency switches based on MoS2 atomristors.

PubMed

Kim, Myungsoo; Ge, Ruijing; Wu, Xiaohan; Lan, Xing; Tice, Jesse; Lee, Jack C; Akinwande, Deji

2018-06-28

Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10 Ω are achievable, making MoS 2 atomristors suitable as energy-efficient radio-frequency (RF) switches. MoS 2 RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches. Furthermore, MoS 2 switches are fully electronic and can be integrated on arbitrary substrates unlike phase-change RF switches. High-frequency results reveal that a key figure of merit, the cutoff frequency (f c ), is about 10 THz for sub-μm 2 switches with favorable scaling that can afford f c above 100 THz for nanoscale devices, exceeding the performance of contemporary switches that suffer from an area-invariant scaling. These results indicate a new electronic application of TMDs as non-volatile switches for communication platforms, including mobile systems, low-power internet-of-things, and THz beam steering.

Air-bridge and Vertical CNT Switches for High Performance Switching Applications

NASA Technical Reports Server (NTRS)

Kaul, Anupama B.; Wong, Eric W.; Epp, Larry; Bronikowski, Michael J.; Hunt, BBrian D.

2006-01-01

Carbon nanotubes are attractive for switching applications since electrostatically-actuated CNT switches have low actuation voltages and power requirements, while allowing GHz switching speeds that stem from the inherently high elastic modulus and low mass of the CNT.Our first NEM structure, the air-bridge switch, consists of suspended single-walled nanotubes (SWNTs) that lie above a sputtered Nb base electrode, where contact to the CNTs is made using evaporated Au/Ti. Electrical measurements of these air-bridge devices show well-defined ON and OFF states as a dc bias of a few volts is applied between the CNT and the Nb-base electrode. The CNT air-bridge switches were measured to have switching times down to a few nanoseconds. Our second NEM structure, the vertical CNT switch, consists of nanotubes grown perpendicular to the substrate. Vertical multi-walled nanotubes (MWNTs) are grown directly on a heavily doped Si substrate, from 200 - 300 nm wide, approximately 1 micrometer deep nano-pockets, with Nb metal electrodes to result in the formation of a vertical single-pole-double-throw switch architecture.

Programmable on-chip and off-chip network architecture on demand for flexible optical intra-datacenters.

PubMed

Rofoee, Bijan Rahimzadeh; Zervas, Georgios; Yan, Yan; Amaya, Norberto; Qin, Yixuan; Simeonidou, Dimitra

2013-03-11

The paper presents a novel network architecture on demand approach using on-chip and-off chip implementations, enabling programmable, highly efficient and transparent networking, well suited for intra-datacenter communications. The implemented FPGA-based adaptable line-card with on-chip design along with an architecture on demand (AoD) based off-chip flexible switching node, deliver single chip dual L2-Packet/L1-time shared optical network (TSON) server Network Interface Cards (NIC) interconnected through transparent AoD based switch. It enables hitless adaptation between Ethernet over wavelength switched network (EoWSON), and TSON based sub-wavelength switching, providing flexible bitrates, while meeting strict bandwidth, QoS requirements. The on and off-chip performance results show high throughput (9.86Ethernet, 8.68Gbps TSON), high QoS, as well as hitless switch-over.

Comparison of high speed DI-LIGBT structures

NASA Astrophysics Data System (ADS)

Sunkavalli, Ravishankar; Baliga, B. Jayant

1997-12-01

The performance of the DI segmented collector (SC)-LIGBT is compared to the collector shorted (CS)-LIGBT. The SC-LIGBT allows for adjusting the tradeoff between switching speed and on-state voltage drop by simply changing the P+ collector segment width during device layout. In contrast to previously reported junction isolated (JI) devices, the DI SC-LIGBT was observed to have a turnoff speed similar to the CS-LIGBT with a higher forward drop than the conventional LIGBT. The on-state performance of the integral diodes of the SC-LIGBTs was found to be superior to the integral diode of the CS-LIGBT. The integral diodes of both the CS and the SC-LIGBTs were found to have much superior switching characteristics compared to a lateral PiN diode at the expense of a higher on-state voltage drop. Thus, the superior switching characteristics of the integral diode in the SC-LIGBT complements its fast switching behavior making this device attractive for compact, high frequency, high efficient, power ICs.

Switching electrochromic performance improvement enabled by highly developed mesopores and oxygen vacancy defects of Fe-doped WO3 films

NASA Astrophysics Data System (ADS)

Koo, Bon-Ryul; Kim, Kue-Ho; Ahn, Hyo-Jin

2018-09-01

In recent years, owing to the capability to reversibly adjust transparency, reflection, and color by the low electric field, electrochromic devices (ECDs) have received an extensive attention for their potential use in optoelectronic applications. However, considering that the performances of the ECDs, including coloration efficiency (CE, <30.0 cm2/C) and switching speed (>10.0 s), are still low for an effective applied use, critical efforts are needed to push the development of a unique nanostructure film to improve electrochromic (EC) performances. Specifically, as the large-scale applications (e.g. refrigerators, vehicles, and airplanes) of the ECDs have been recently developed, the study for improving switching speed is urgently needed for commercialization of the devices. In this context, the present study reports a novel nanostructure film of Fe-doped WO3 films with highly developed mesopores and oxygen vacancy defects, fabricated using the Fe agent and the camphene-assisted sol-gel method. Fe-doped WO3 films with highly developed mesopores and oxygen vacancy defects show remarkable EC performances with both fast switching speed (2.8 s for the coloration speed and 0.3 s for the bleaching speed) and high CE (71.1 cm2/C). These two aspects contribute to the synergistic effects of optimized Fe doping and camphene on the films and have outstanding values as compared to previously reported results of WO3-based materials. Specifically, the fast switching speed is attributed to the shortened Li+ diffusion pathway of the highly developed mesopores; and the other is the improved electrical conductivity of the highly increased oxygen vacancy defects. In addition, the high CE value is due to an efficient charge transport as the result of a more effective electroactive contact of the morphology with highly developed mesopores, resulting in a large transmittance modulation with a small intercalated charge density.

An absorptive single-pole four-throw switch using multiple-contact MEMS switches and its application to a monolithic millimeter-wave beam-forming network

NASA Astrophysics Data System (ADS)

Lee, Sanghyo; Kim, Jong-Man; Kim, Yong-Kweon; Kwon, Youngwoo

2009-01-01

In this paper, a new absorptive single-pole four-throw (SP4T) switch based on multiple-contact switching is proposed and integrated with a Butler matrix to demonstrate a monolithic beam-forming network at millimeter waves (mm waves). In order to simplify the switching driving circuit and reduce the number of unit switches in an absorptive SP4T switch, the individual switches were replaced with long-span multiple-contact switches using stress-free single-crystalline-silicon MEMS technology. This approach improves the mechanical stability as well as the manufacturing yield, thereby allowing successful integration into a monolithic beam former. The fabricated absorptive SP4T MEMS switch shows insertion loss less than 1.3 dB, return losses better than 11 dB at 30 GHz and wideband isolation performance higher than 39 dB from 20 to 40 GHz. The absorptive SP4T MEMS switch is integrated with a 4 × 4 Butler matrix on a single chip to implement a monolithic beam-forming network, directing beam into four distinct angles. Array factors from the measured data show that the proposed absorptive SPnT MEMS switch can be effectively used for high-performance mm-wave beam-switching systems. This work corresponds to the first demonstration of a monolithic beam-forming network using switched beams.

Investigation of high-voltage pulse trigger generator based on photo-conductive semiconductor switch

NASA Astrophysics Data System (ADS)

Chu, Xu; Liu, Jin-Liang; Wang, Lang-Ning; Qiu, Yong-Feng

2018-06-01

The trigger to generate high-voltage pulse is one of the most important parts in a pulsed-power system, especially for the conduction characteristics of the main switch. However, traditional triggers usually have the drawbacks of large structure and worse long-term working stability, which goes against the demands of pulsed-power system miniaturization and stability. In the paper, a pulse trigger using photo-conductive semiconductor switch was developed, which is of small size, stable performance and steep leading edge of the output pulse rise. It is found that the output trigger pulse rise time is 14 ns, and the jitter of 20 shots is 330 ps. Applying the designed pulsed trigger in a field distortion switch and a triggered vacuum switch, experiments show that the switches could be triggered stably with reduced jitter.

High-port low-latency optical switch architecture with optical feed-forward buffering for 256-node disaggregated data centers.

PubMed

Terzenidis, Nikos; Moralis-Pegios, Miltiadis; Mourgias-Alexandris, George; Vyrsokinos, Konstantinos; Pleros, Nikos

2018-04-02

Departing from traditional server-centric data center architectures towards disaggregated systems that can offer increased resource utilization at reduced cost and energy envelopes, the use of high-port switching with highly stringent latency and bandwidth requirements becomes a necessity. We present an optical switch architecture exploiting a hybrid broadcast-and-select/wavelength routing scheme with small-scale optical feedforward buffering. The architecture is experimentally demonstrated at 10Gb/s, reporting error-free performance with a power penalty of <2.5dB. Moreover, network simulations for a 256-node system, revealed low-latency values of only 605nsec, at throughput values reaching 80% when employing 2-packet-size optical buffers, while multi-rack network performance was also investigated.

A low-latency optical switch architecture using integrated μm SOI-based contention resolution and switching

NASA Astrophysics Data System (ADS)

Mourgias-Alexandris, G.; Moralis-Pegios, M.; Terzenidis, N.; Cherchi, M.; Harjanne, M.; Aalto, T.; Vyrsokinos, K.; Pleros, N.

2018-02-01

The urgent need for high-bandwidth and high-port connectivity in Data Centers has boosted the deployment of optoelectronic packet switches towards bringing high data-rate optics closer to the ASIC, realizing optical transceiver functions directly at the ASIC package for high-rate, low-energy and low-latency interconnects. Even though optics can offer a broad range of low-energy integrated switch fabrics for replacing electronic switches and seamlessly interface with the optical I/Os, the use of energy- and latency-consuming electronic SerDes continues to be a necessity, mainly dictated by the absence of integrated and reliable optical buffering solutions. SerDes undertakes the role of optimally synergizing the lower-speed electronic buffers with the incoming and outgoing optical streams, suggesting that a SerDes-released chip-scale optical switch fabric can be only realized in case all necessary functions including contention resolution and switching can be implemented on a common photonic integration platform. In this paper, we demonstrate experimentally a hybrid Broadcast-and-Select (BS) / wavelength routed optical switch that performs both the optical buffering and switching functions with μm-scale Silicon-integrated building blocks. Optical buffering is carried out in a silicon-integrated variable delay line bank with a record-high on-chip delay/footprint efficiency of 2.6ns/mm2 and up to 17.2 nsec delay capability, while switching is executed via a BS design and a silicon-integrated echelle grating, assisted by SOA-MZI wavelength conversion stages and controlled by a FPGA header processing module. The switch has been experimentally validated in a 3x3 arrangement with 10Gb/s NRZ optical data packets, demonstrating error-free switching operation with a power penalty of <5dB.

Evaluation of the optical switching characteristics of erbium-doped fibres for the development of a fibre Bragg grating sensor interrogator

NASA Astrophysics Data System (ADS)

Rigas, Evangelos; Correia, R.; Stathopoulos, N. A.; Savaidis, S. P.; James, S. W.; Bhattacharyya, D.; Kirby, P. B.; Tatam, R. P.

2014-05-01

A polling topology that employs optical switching based on the properties of erbium-doped fibres (EDFs) is used to interrogate an array of FBGs. The properties of the EDF are investigated in its pumped and un-pumped states and the EDFs' switching properties are evaluated by comparing them with a high performance electronically controlled MEM optical switch. Potential advantages of the proposed technique are discussed.

Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage.

PubMed

Kang, Dong-Ho; Choi, Woo-Young; Woo, Hyunsuk; Jang, Sungkyu; Park, Hyung-Youl; Shim, Jaewoo; Choi, Jae-Woong; Kim, Sungho; Jeon, Sanghun; Lee, Sungjoo; Park, Jin-Hong

2017-08-16

In this study, we demonstrate a high-performance solid polymer electrolyte (SPE) atomic switching device with low SET/RESET voltages (0.25 and -0.5 V, respectively), high on/off-current ratio (10 5 ), excellent cyclic endurance (>10 3 ), and long retention time (>10 4 s), where poly-4-vinylphenol (PVP)/poly(melamine-co-formaldehyde) (PMF) is used as an SPE layer. To accomplish these excellent device performance parameters, we reduce the off-current level of the PVP/PMF atomic switching device by improving the electrical insulating property of the PVP/PMF electrolyte through adjustment of the number of cross-linked chains. We then apply a titanium buffer layer to the PVP/PMF switching device for further improvement of bipolar switching behavior and device stability. In addition, we first implement SPE atomic switch-based logic AND and OR circuits with low operating voltages below 2 V by integrating 5 × 5 arrays of PVP/PMF switching devices on the flexible substrate. In particular, this low operating voltage of our logic circuits was much lower than that (>5 V) of the circuits configured by polymer resistive random access memory. This research successfully presents the feasibility of PVP/PMF atomic switches for flexible integrated circuits for next-generation electronic applications.

A lightweight thermal heat switch for redundant cryocooling on satellites

NASA Astrophysics Data System (ADS)

Dietrich, M.; Euler, A.; Thummes, G.

2017-04-01

A previously designed cryogenic thermal heat switch for space applications has been optimized for low mass, high structural stability, and reliability. The heat switch makes use of the large linear thermal expansion coefficient (CTE) of the thermoplastic UHMW-PE for actuation. A structure model, which includes the temperature dependent properties of the actuator, is derived to be able to predict the contact pressure between the switch parts. This pressure was used in a thermal model in order to predict the switch performance under different heat loads and operating temperatures. The two models were used to optimize the mass and stability of the switch. Its reliability was proven by cyclic actuation of the switch and by shaker tests.

Flexible radio-frequency single-crystal germanium switch on plastic substrates

NASA Astrophysics Data System (ADS)

Qin, Guoxuan; Cai, Tianhao; Yuan, Hao-Chih; Seo, Jung-Hun; Ma, Jianguo; Ma, Zhenqiang

2014-04-01

This Letter presents the realization and characterizations of the flexible radio-frequency (RF)/microwave switches on plastic substrates employing single-crystal germanium (Ge) nanomembranes. The fabricated flexible Ge single-pole, single-throw (SPST) switches display high frequency responses (e.g., insertion loss of <1.3 dB at up to 30 GHz and isolation >10 dB at up to ˜13 GHz). RF performance tradeoff exists for the flexible Ge switches and the major affecting parameters are determined. The flexible Ge SPST switch shows better RF property to that of the flexible Si SPST switch. Underlying mechanism is investigated by theoretical analysis and modeling of switches with different structures.

Conceptual design of a high-speed electromagnetic switch for a modified flux-coupling-type SFCL and its application in renewable energy system.

PubMed

Chen, Lei; Chen, Hongkun; Yang, Jun; Shu, Zhengyu; He, Huiwen; Shu, Xin

2016-01-01

The modified flux-coupling-type superconducting fault current (SFCL) is a high-efficient electrical auxiliary device, whose basic function is to suppress the short-circuit current by controlling the magnetic path through a high-speed switch. In this paper, the high-speed switch is based on electromagnetic repulsion mechanism, and its conceptual design is carried out to promote the application of the modified SFCL. Regarding that the switch which is consisting of a mobile copper disc, two fixed opening and closing coils, the computational method for the electromagnetic force is discussed, and also the dynamic mathematical model including circuit equation, magnetic field equation as well as mechanical motion equation is theoretically deduced. According to the mathematical modeling and calculation of characteristic parameters, a feasible design scheme is presented, and the high-speed switch's response time can be less than 0.5 ms. For that the modified SFCL is equipped with this high-speed switch, the SFCL's application in a 10 kV micro-grid system with multiple renewable energy sources are assessed in the MATLAB software. The simulations are well able to affirm the SFCL's performance behaviors.

20 kA PFN capacitor bank with solid-state switching. [pulse forming network for plasma studies

NASA Technical Reports Server (NTRS)

Posta, S. J.; Michels, C. J.

1973-01-01

A compact high-current pulse-forming network capacitor bank using paralleled silicon controlled rectifiers as switches is described. The maximum charging voltage of the bank is 1kV and maximum load current is 20 kA. The necessary switch equalization criteria and performance with dummy load and an arc plasma generator are described.

Magnesium-based photocathodes for triggering back-lighted thyratrons

NASA Astrophysics Data System (ADS)

Sozer, Esin B.

This dissertation presents experimental studies of application of magnesium-based photocathodes to optically triggered pseudospark switches, called back-lighted thyratrons (BLTs). Magnesium was chosen as a low work function metal photocathode for its potential to increase triggering performance of the switch with a higher photoemission performance than traditional BLT cathodes. Improvement in triggering performance of plasma switches is of interest for device development of compact pulsed power systems where the size of switching units can limit the overall size and the mobility of the system. Experiments were conducted on photoemission performance of photocathode candidates under BLT-relevant conditions; and delay and jitter performance of a BLT with photocathode candidates with changing helium pressure and switch voltages. A review of photocathode literature showed that Mg and Cu are the most promising candidates for increasing the photoemission during the triggering of BLTs. As a commonly used BLT cathode in the switch literature, Mo was chosen together with Mg and Cu to be tested under BLT-relevant pressure and field conditions. Quantum efficiency measurements of high-purity foils of Mg, Cu and Mo showed a superior performance of Mg and Cu over Mo. Mg had the highest quantum efficiency of 1.5 x 10-5 among all three materials. After photoemission measurements in a test bed were concluded, testing of these cathodes for their switching performance was done in two stages. First, an unfocused UV laser beam (8.5 x 106 W/cm 2) with a wavelength of 266 nm was used for delay measurements of a BLT with Mg, Cu and Mo-based cathodes. Mg-based cathodes showed at least a thirty-fold reduction in delay and jitter compared to Cu-based and at least an eighty-fold reduction in delay and jitter compared to Mo-based cathodes at any given helium pressure and switch voltage pair. Subsequently, a partial focusing of the same light source was utilized (7.4 x 107W/cm 2) for delay measurements of a BLT with copper electrodes at constant switch voltage and changing helium pressure before and after integration of a Mg foil. These measurements showed an order of magnitude shorter delay and jitter throughout the pressure range when the high-purity Mg-foil was present at the switch cathode. Theoretical estimations of electron emission from the cathode during the triggering suggested that the main mechanism responsible for the observed change in delay and jitter was the increased photoemission due to the lower work function of the Mg cathode and that the effect of temperature on triggering is negligible. SEM images of the high-purity Mg foil integrated at the BLT cathode for 106 shots showed signs of melting around the bore hole. No degradation of the switch performance was observed for the duration of 10 6 shots. In conclusion, magnesium-based cathodes for BLTs showed an important potential for small triggering units for optical triggering, especially when the intensity of the optical source is limited. A future work involving plasma simulations is suggested for assessing potential of different cathode/optical source pairs for triggering BLTs.

The effect of domain-general inhibition-related training on language switching: An ERP study.

PubMed

Liu, Huanhuan; Liang, Lijuan; Dunlap, Susan; Fan, Ning; Chen, Baoguo

2016-01-01

Previous studies have demonstrated that inhibitory control ability could be improved by training, and the Inhibitory Control (IC) Model implies that enhanced domain-general inhibition may elicit certain changes in language switch costs. In the present study, we aimed to examine the effects of domain-general inhibition training on performance in a language switching task, including which phase of domain-general inhibitory control benefits from training during an overt picture naming task in L1 and L2, using the event-related brain potentials (ERPs). Results showed that the language switch costs of bilinguals with high inhibitory control (high-IC) were symmetrical in both pretest and posttest, and those of bilinguals with low inhibitory control (low-IC) were asymmetrical in the pretest, but symmetrical in the posttest. Moreover, the high-IC group showed a larger LPC (late positive component) for L2 switch trials than for L1 trials in both pretest and posttest. In contrast, the low-IC group only exhibited a similar pattern of LPC in the posttest, but not in the pretest. These results indicate that inhibition training could increase the efficiency of language switching, and inhibitory control may play a key role during the lexical selection response phase. Overall, the present study is the first one to provide electrophysiological evidence for individual differences in the domain-general inhibition impact on language switching performance in low-proficient bilinguals. Copyright © 2015 Elsevier B.V. All rights reserved.

Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.

PubMed

Hasegawa, Tsuyoshi; Terabe, Kazuya; Tsuruoka, Tohru; Aono, Masakazu

2012-01-10

An atomic switch is a nanoionic device that controls the diffusion of metal ions/atoms and their reduction/oxidation processes in the switching operation to form/annihilate a conductive path. Since metal atoms can provide a highly conductive channel even if their cluster size is in the nanometer scale, atomic switches may enable downscaling to smaller than the 11 nm technology node, which is a great challenge for semiconductor devices. Atomic switches also possess novel characteristics, such as high on/off ratios, very low power consumption and non-volatility. The unique operating mechanisms of these devices have enabled the development of various types of atomic switch, such as gap-type and gapless-type two-terminal atomic switches and three-terminal atomic switches. Novel functions, such as selective volatile/nonvolatile, synaptic, memristive, and photo-assisted operations have been demonstrated. Such atomic switch characteristics can not only improve the performance of present-day electronic systems, but also enable development of new types of electronic systems, such as beyond von- Neumann computers. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

RF Reference Switch for Spaceflight Radiometer Calibration

NASA Technical Reports Server (NTRS)

Knuble, Joseph

2013-01-01

The goal of this technology is to provide improved calibration and measurement sensitivity to the Soil Moisture Active Passive Mission (SMAP) radiometer. While RF switches have been used in the past to calibrate microwave radiometers, the switch used on SMAP employs several techniques uniquely tailored to the instrument requirements and passive remote-sensing in general to improve radiometer performance. Measurement error and sensitivity are improved by employing techniques to reduce thermal gradients within the device, reduce insertion loss during antenna observations, increase insertion loss temporal stability, and increase rejection of radar and RFI (radio-frequency interference) signals during calibration. The two legs of the single-pole double-throw reference switch employ three PIN diodes per leg in a parallel-shunt configuration to minimize insertion loss and increase stability while exceeding rejection requirements at 1,413 MHz. The high-speed packaged diodes are selected to minimize junction capacitance and resistance while ensuring the parallel devices have very similar I-V curves. Switch rejection is improved by adding high-impedance quarter-wave tapers before and after the diodes, along with replacing the ground via of one diode per leg with an open circuit stub. Errors due to thermal gradients in the switch are reduced by embedding the 50-ohm reference load within the switch, along with using a 0.25-in. (approximately equal to 0.6-cm) aluminum prebacked substrate. Previous spaceflight microwave radiometers did not embed the reference load and thermocouple directly within the calibration switch. In doing so, the SMAP switch reduces error caused by thermal gradients between the load and switch. Thermal issues are further reduced by moving the custom, highspeed regulated driver circuit to a physically separate PWB (printed wiring board). Regarding RF performance, previous spaceflight reference switches have not employed high-impedance tapers to improve rejection. The use of open-circuit stubs instead of a via to provide an improved RF short is unique to this design. The stubs are easily tunable to provide high rejection at specific frequencies while maintaining very low insertion loss in-band.

Design and Test of Passively Operated Heat Switches for 0.2 to 15 K

NASA Technical Reports Server (NTRS)

DiPirro, M. J.; Shirron, P. J.; Canavan, E. R.; Francis, J. J.; Tuttle, J. G.

2003-01-01

Heat switches have many uses in cryogenics, from regulating heat flow between refrigeration stages to thermally isolating components once they have cooled to low temperature. Among the techniques one can use for thermal switching, the gas-gap technique has the advantages of wide operating temperature range, high switching ratio, and no moving parts. The traditional gas-gap switch uses copper conductors separated by a small gap and an external getter. The switch is activated by heating and cooling the getter by moving gas into and out of the gap, turning the switch on and off. We have designed, built and tested heat switches that use an internal getter to passively turn off at temperatures between 0.2 and 15 K. The getter is thermally anchored to one side of the switch, and when that side of the switch cools through a transition region, gas adsorbs onto the getter and the switch turns off. The challenges are to make the transition region very narrow and tailorable to a wide range of applications, and to achieve high gas conductance when the switch is on. We have made switches using He-3, He-4, hydrogen, and neon gas, and have used charcoal and various metal substrates as getters. Switching ratios range from 1000 to over 10,000. Design and performance of these switches will be discussed in detail.

A fast switch, combiner and narrow-band filter for high-power millimetre wave beams

NASA Astrophysics Data System (ADS)

Kasparek, W.; Petelin, M. I.; Shchegolkov, D. Yu; Erckmann, V.; Plaum, B.; Bruschi, A.; ECRH Groups at IPP Greifswald; Karlsruhe, FZK; Stuttgart, IPF

2008-05-01

A fast directional switch (FADIS) is described, which allows controlled switching of high-power microwaves between two outputs. A possible application could be synchronous stabilization of neoclassical tearing modes (NTMs). Generally, the device can be used to share the installed EC power between different types of launchers or different applications (e.g. in ITER, midplane/upper launcher). The switching is performed electronically without moving parts by a small frequency-shift keying of the gyrotron (some tens of megahertz), and a narrow-band diplexer. The device can be operated as a beam combiner also, which offers attractive transmission perspectives in multi-megawatt ECRH systems. In addition, these diplexers are useful for plasma diagnostic systems employing high-power sources due to their filter characteristics. The principle and the design of a four-port quasi-optical resonator diplexer is presented. Low-power measurements of switching contrast, mode purity and efficiency show good agreement with theory. Preliminary frequency modulation characteristics of gyrotrons are shown, and first results from high-power switching experiments using the ECRH system for W7-X are presented.

Polymer stabilized liquid crystals: Topology-mediated electro-optical behavior and applications

NASA Astrophysics Data System (ADS)

Weng, Libo

There has been a wide range of liquid crystal polymer composites that vary in polymer concentration from as little as 3 wt.% (polymer stabilized liquid crystal) to as high as 60 wt.% (polymer dispersed liquid crystals). In this dissertation, an approach of surface polymerization based on a low reactive monomer concentration about 1 wt.% is studied in various liquid crystal operation modes. The first part of dissertation describes the development of a vertical alignment (VA) mode with surface polymer stabilization, and the effects of structure-performance relationship of reactive monomers (RMs) and polymerization conditions on the electro-optical behaviors of the liquid crystal device has been explored. The polymer topography plays an important role in modifying and enhancing the electro-optical performance of stabilized liquid crystal alignment. The enabling surface-pinned polymer stabilized vertical alignment (PSVA) approach has led to the development of high-performance and fast-switching displays with controllable pretilt angle, increase in surface anchoring energy, high optical contrast and fast response time. The second part of the dissertation explores a PSVA mode with in-plane switching (IPS) and its application for high-efficiency and fast-switching phase gratings. The diffraction patterns and the electro-optical behaviors including diffraction efficiency and response time are characterized. The diffraction grating mechanism and performance have been validated by computer simulation. Finally, the advantages of surface polymerization approach such as good optical contrast and fast response time have been applied to the fringe-field switching (FFS) system. The concentration of reactive monomer on the electro-optical behavior of the FFS cells is optimized. The outstanding electro-optical results and mechanism of increase in surface anchoring strength are corroborated by the director field simulation. The density and topology of nanoscale polymer protrusions are analyzed and confirmed by morphological study. The developed high-performance polymer-stabilized fringe-field-switching (PS-FFS) could open new types of device applications.

A 600 VOLT MULTI-STAGE, HIGH REPETITION RATE GAN FET SWITCH

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frolov, D.; Pfeffer, H.; Saewert, G.

Using recently available GaN FETs, a 600 Volt three- stage, multi-FET switch has been developed having 2 nanosecond rise time driving a 200 Ohm load with the potential of approaching 30 MHz average switching rates. Possible applications include driving particle beam choppers kicking bunch-by-bunch and beam deflectors where the rise time needs to be custom tailored. This paper reports on the engineering issues addressed, the design approach taken and some performance results of this switch.

Silicon Modulators, Switches and Sub-systems for Optical Interconnect

NASA Astrophysics Data System (ADS)

Li, Qi

Silicon photonics is emerging as a promising platform for manufacturing and integrating photonic devices for light generation, modulation, switching and detection. The compatibility with existing CMOS microelectronic foundries and high index contrast in silicon could enable low cost and high performance photonic systems, which find many applications in optical communication, data center networking and photonic network-on-chip. This thesis first develops and demonstrates several experimental work on high speed silicon modulators and switches with record performance and novel functionality. A 8x40 Gb/s transmitter based on silicon microrings is first presented. Then an end-to-end link using microrings for Binary Phase Shift Keying (BPSK) modulation and demodulation is shown, and its performance with conventional BPSK modulation/ demodulation techniques is compared. Next, a silicon traveling-wave Mach- Zehnder modulator is demonstrated at data rate up to 56 Gb/s for OOK modulation and 48 Gb/s for BPSK modulation, showing its capability at high speed communication systems. Then a single silicon microring is shown with 2x2 full crossbar switching functionality, enabling optical interconnects with ultra small footprint. Then several other experiments in the silicon platform are presented, including a fully integrated in-band Optical Signal to Noise Ratio (OSNR) monitor, characterization of optical power upper bound in a silicon microring modulator, and wavelength conversion in a dispersion-engineered waveguide. The last part of this thesis is on network-level application of photonics, specically a broadcast-and-select network based on star coupler is introduced, and its scalability performance is studied. Finally a novel switch architecture for data center networks is discussed, and its benefits as a disaggregated network are presented.

Reconfigurable electro-optical directed-logic circuit using carrier-depletion micro-ring resonators.

PubMed

Qiu, Ciyuan; Gao, Weilu; Soref, Richard; Robinson, Jacob T; Xu, Qianfan

2014-12-15

Here we demonstrate a reconfigurable electro-optical directed-logic circuit based on a regular array of integrated optical switches. Each 1×1 optical switch consists of a micro-ring resonator with an embedded lateral p-n junction and a micro-heater. We achieve high-speed on-off switching by applying electrical logic signals to the p-n junction. We can configure the operation mode of each switch by thermal tuning the resonance wavelength. The result is an integrated optical circuit that can be reconfigured to perform any combinational logic operation. As a proof-of-principle, we fabricated a multi-spectral directed-logic circuit based on a fourfold array of switches and showed that this circuit can be reconfigured to perform arbitrary two-input logic functions with speeds up to 3  GB/s.

Carbon Nanotube Switches for Communication and Memory Applications

NASA Technical Reports Server (NTRS)

Kaul, Anupama B.; Epp, Larry; Wong, Eric W.; Kowalczyk, Robert

2008-01-01

Lateral CNT Switches: a) dc CNT switches were demonstrated to operate at low voltages, low powers and high speeds. b) RF simulations of switch in series configuration with metallized tube yielded good RF performance 1) Isolation simulated to be approx. 20 dB at 100 GHz. 2) Insertion loss simulated to be < 0.5 dB at 100 GHz. Vertical CNT Switches: a) Thermal CVD was used to mechanically constrain tubes in nanopockets; tubes not self-supporting. b) Demonstrated growth of vertically aligned arrays and single-few MWNTs using dc PECVD with Ni catalyst using optical lithography.

Voltage-Controlled On/Off Switching of Ferromagnetism in Manganite Supercapacitors.

PubMed

Molinari, Alan; Hahn, Horst; Kruk, Robert

2018-01-01

The ever-growing technological demand for more advanced microelectronic and spintronic devices keeps catalyzing the idea of controlling magnetism with an electric field. Although voltage-driven on/off switching of magnetization is already established in some magnetoelectric (ME) systems, often the coupling between magnetic and electric order parameters lacks an adequate reversibility, energy efficiency, working temperature, or switching speed. Here, the ME performance of a manganite supercapacitor composed of a ferromagnetic, spin-polarized ultrathin film of La 0.74 Sr 0.26 MnO 3 (LSMO) electrically charged with an ionic liquid electrolyte is investigated. Fully reversible, rapid, on/off switching of ferromagnetism in LSMO is demonstrated in combination with a shift in Curie temperature of up to 26 K and a giant ME coupling coefficient of ≈226 Oe V -1 . The application of voltages of only ≈2 V results in ultralow energy consumptions of about 90 µJ cm -2 . This work provides a step forward toward low-power, high-endurance electrical switching of magnetism for the development of high-performance ME spintronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A soft-switching coupled inductor bidirectional DC-DC converter with high-conversion ratio

NASA Astrophysics Data System (ADS)

Chao, Kuei-Hsiang; Jheng, Yi-Cing

2018-01-01

A soft-switching bidirectional DC-DC converter is presented herein as a way to improve the conversion efficiency of a photovoltaic (PV) system. Adoption of coupled inductors enables the presented converter not only to provide a high-conversion ratio but also to suppress the transient surge voltage via the release of the energy stored in leakage flux of the coupled inductors, and the cost can kept down consequently. A combined use of a switching mechanism and an auxiliary resonant branch enables the converter to successfully perform zero-voltage switching operations on the main switches and improves the efficiency accordingly. It was testified by experiments that our proposed converter works relatively efficiently in full-load working range. Additionally, the framework of the converter intended for testifying has high-conversion ratio. The results of a test, where a generating system using PV module array coupled with batteries as energy storage device was used as the low-voltage input side, and DC link was used as high-voltage side, demonstrated our proposed converter framework with high-conversion ratio on both high-voltage and low-voltage sides.

A random Q-switched fiber laser

PubMed Central

Tang, Yulong; Xu, Jianqiu

2015-01-01

Extensive studies have been performed on random lasers in which multiple-scattering feedback is used to generate coherent emission. Q-switching and mode-locking are well-known routes for achieving high peak power output in conventional lasers. However, in random lasers, the ubiquitous random cavities that are formed by multiple scattering inhibit energy storage, making Q-switching impossible. In this paper, widespread Rayleigh scattering arising from the intrinsic micro-scale refractive-index irregularities of fiber cores is used to form random cavities along the fiber. The Q-factor of the cavity is rapidly increased by stimulated Brillouin scattering just after the spontaneous emission is enhanced by random cavity resonances, resulting in random Q-switched pulses with high brightness and high peak power. This report is the first observation of high-brightness random Q-switched laser emission and is expected to stimulate new areas of scientific research and applications, including encryption, remote three-dimensional random imaging and the simulation of stellar lasing. PMID:25797520

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks.

PubMed

Shen, Yiwen; Hattink, Maarten H N; Samadi, Payman; Cheng, Qixiang; Hu, Ziyiz; Gazman, Alexander; Bergman, Keren

2018-04-16

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. We present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly network testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 µs control plane latency for data-center and high performance computing platforms.

High performance nonvolatile memory devices based on Cu2-xSe nanowires

NASA Astrophysics Data System (ADS)

Wu, Chun-Yan; Wu, Yi-Liang; Wang, Wen-Jian; Mao, Dun; Yu, Yong-Qiang; Wang, Li; Xu, Jun; Hu, Ji-Gang; Luo, Lin-Bao

2013-11-01

We report on the rational synthesis of one-dimensional Cu2-xSe nanowires (NWs) via a solution method. Electrical analysis of Cu2-xSe NWs based memory device exhibits a stable and reproducible bipolar resistive switching behavior with a low set voltage (0.3-0.6 V), which can enable the device to write and erase data efficiently. Remarkably, the memory device has a record conductance switching ratio of 108, much higher than other devices ever reported. At last, a conducting filaments model is introduced to account for the resistive switching behavior. The totality of this study suggests that the Cu2-xSe NWs are promising building blocks for fabricating high-performance and low-consumption nonvolatile memory devices.

High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chun, Young Tea; Chu, Daping, E-mail: dpc31@cam.ac.uk; Neeves, Matthew

2014-11-10

High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiO{sub x} thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2 cm{sup 2}, exhibiting an optical contrast of 73.11% at the wavelength of 470 nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively.

High voltage systems (tube-type microwave)/low voltage system (solid-state microwave) power distribution

NASA Technical Reports Server (NTRS)

Nussberger, A. A.; Woodcock, G. R.

1980-01-01

SPS satellite power distribution systems are described. The reference Satellite Power System (SPS) concept utilizes high-voltage klystrons to convert the onboard satellite power from dc to RF for transmission to the ground receiving station. The solar array generates this required high voltage and the power is delivered to the klystrons through a power distribution subsystem. An array switching of solar cell submodules is used to maintain bus voltage regulation. Individual klystron dc voltage conversion is performed by centralized converters. The on-board data processing system performs the necessary switching of submodules to maintain voltage regulation. Electrical power output from the solar panels is fed via switch gears into feeder buses and then into main distribution buses to the antenna. Power also is distributed to batteries so that critical functions can be provided through solar eclipses.

Investigation of a compact coaxially fed switched oscillator

NASA Astrophysics Data System (ADS)

Wang, Yuwei; Chen, Dongqun; Zhang, Jiande; Cao, Shengguang; Li, Da; Liu, Chebo

2013-09-01

To generate a relative high frequency mesoband microwave, a compact coaxially fed transmission line switched oscillator with high voltage capability is investigated. The characteristic impedance and voltage capability of the low impedance transmission line (LITL) have been analyzed. It is shown that the working voltage of the oscillator can reach up to 200 kV when it is filled by pressurized nitrogen and charged by a nanosecond driving source. By utilizing a commercial electromagnetic simulation code, the transient performance of the switched oscillator with a lumped resistance load is simulated. It is illustrated that the center frequency of the output signal reaches up to ˜0.6 GHz when the spark gap practically closes with a single channel. Besides, the influence of the closing mode and rapidity of the spark gap, the permittivity of the insulator at the output end of the LITL, and the load impedance on the transient performance of the designed oscillator has been analyzed in quantification. Finally, the good transient performance of the switched oscillator has been preliminarily proved by the experiment.

MOBS - A modular on-board switching system

NASA Astrophysics Data System (ADS)

Berner, W.; Grassmann, W.; Piontek, M.

The authors describe a multibeam satellite system that is designed for business services and for communications at a high bit rate. The repeater is regenerative with a modular onboard switching system. It acts not only as baseband switch but also as the central node of the network, performing network control and protocol evaluation. The hardware is based on a modular bus/memory architecture with associated processors.

The 4 phase VSR motor: The ideal prime mover for electric vehicles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Holling, G.H.; Yeck, M.M.

1994-12-31

4 phase variable switched reluctance motors are gaining acceptance in many applications due to their fault tolerant characteristics. A 4 phase variable switched reluctance motor (VSR) is modelled and its performance is predicted for several operating points for an electric vehicle application. The 4 phase VSR offers fault tolerance, high performance, and an excellent torque to weight ratio. The actual system performance was measured both on a teststand and on an actual vehicle. While the system described is used in a production electric motorscooter, the technology is equally applicable for high efficiency electric cars and buses. 4 refs.

Thought suppression predicts task switching deficits in patients with frontal lobe epilepsy.

PubMed

Gul, Amara; Ahmad, Hira

2015-04-01

To examine the relationship between task switching and thought suppression in connection with frontal lobe epilepsy (FLE). This experimental study included 30 patients with FLE admitted to the Services and Jinnah Hospital, Lahore, Pakistan between February and November 2013, and 30 healthy individuals from the local community. Participants performed a task switching experiment where they switched between emotion and age categorizations among faces. In addition, they completed a thought suppression questionnaire. There were 3 important results: (i) Patients with FLE showed weaker task switching abilities than healthy individuals. This result is attributed toward executive dysfunctions in patients with FLE. (ii) Contrary to the control group, patients with FLE showed larger switch cost for the age than the emotion categorization. This result can be seen in the context of social cognition deficits and poor inhibitory control in patients with FLE. In addition, larger switch costs reflected a binding effect with facial emotion as compared to age. The integration might represent emotion as an intrusive facial dimension that interrupted task switching performance. (iii) Patients with FLE had more recurrent suppression of thoughts than controls. Thought suppression was a significant predictor for switch costs. High scores on thought suppression were correlated with task switching deficits. The results suggest that thought suppression causes significant cognitive decline.

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

NASA Astrophysics Data System (ADS)

Miao, Feng; Strachan, John Paul; Yang, J. Joshua; Yi, Wei; Goldfarb, Ilan; Zhang, M.-X.; Torrezan, Antonio C.; Eschbach, Peter; Kelley, Ronald D.; Medeiros-Ribeiro, Gilberto; Williams, R. Stanley

2012-02-01

Two major challenges for resistance memory devices (memristors) based on conductivity changes in oxide materials are better performance and understanding of the microscopic picture of the switching. After researchers' relentless pursuit for years, tantalum oxide-based memristors have rapidly risen to be the top candidate, showing fast speed, high endurance and excellent scalability. While the microscopic picture of these devices remains obscure, by employing a precise method for locating and directly visualizing the conduction channel, here we observed a nanoscale channel consisting of an amorphous Ta(O) solid solution surrounded by crystalline Ta2O5. Structural and chemical analyses of the channel combined with temperature dependent transport measurements revealed a unique resistance switching mechanism: the modulation of the channel elemental composition, and thus the conductivity, by the cooperative influence of drift, diffusion and thermophoresis, which seem to enable the high switching performance observed. (Miao*, Strachan*, Yang* et al., Advanced Materials. DOI: 10.1002/adma201103379 (2011))

Monolithic InP strictly non-blocking 8×8 switch for high-speed WDM optical interconnection.

PubMed

Kwack, Myung-Joon; Tanemura, Takuo; Higo, Akio; Nakano, Yoshiaki

2012-12-17

A strictly non-blocking 8 × 8 switch for high-speed WDM optical interconnection is realized on InP by using the phased-array scheme for the first time. The matrix switch architecture consists of over 200 functional devices such as star couplers, phase-shifters and so on without any waveguide cross-section. We demonstrate ultra-broad optical bandwidth covering the entire C-band through several Input/Output ports combination with extinction ratio performance of more than 20dB. Also, nanoseconds reconfiguration time was successfully achieved by dynamic switching experiment. Error-free transmission was verified for 40-Gbps (10-Gbps × 4ch) WDM signal.

Excellent Resistive Switching Performance of Cu-Se-Based Atomic Switch Using Lanthanide Metal Nanolayer at the Cu-Se/Al2O3 Interface.

PubMed

Woo, Hyunsuk; Vishwanath, Sujaya Kumar; Jeon, Sanghun

2018-03-07

The next-generation electronic society is dependent on the performance of nonvolatile memory devices, which has been continuously improving. In the last few years, many memory devices have been introduced. However, atomic switches are considered to be a simple and reliable basis for next-generation nonvolatile devices. In general, atomic switch-based resistive switching is controlled by electrochemical metallization. However, excess ion injection from the entire area of the active electrode into the switching layer causes device nonuniformity and degradation of reliability. Here, we propose the fabrication of a high-performance atomic switch based on Cu x -Se 1- x by inserting lanthanide (Ln) metal buffer layers such as neodymium (Nd), samarium (Sm), dysprosium (Dy), or lutetium (Lu) between the active metal layer and the electrolyte. Current-atomic force microscopy results confirm that Cu ions penetrate through the Ln-buffer layer and form thin conductive filaments inside the switching layer. Compared with the Pt/Cu x -Se 1- x /Al 2 O 3 /Pt device, the optimized Pt/Cu x -Se 1- x /Ln/Al 2 O 3 /Pt devices show improvement in the on/off resistance ratio (10 2 -10 7 ), retention (10 years/85 °C), endurance (∼10 000 cycles), and uniform resistance state distribution.

Current interruption in inductive storage systems with inertial current source

NASA Astrophysics Data System (ADS)

Vitkovitsky, I. M.; Conte, D.; Ford, R. D.; Lupton, W. H.

1980-03-01

Utilization of inertial current source inductive storage with high power output requires a switch with short opening time. This switch must operate as a circuit breaker, i.e., be capable to carry the current for a time period characteristic of inertial systems, such as homopolar generators. For reasonable efficiency, its opening time must be fast to minimize the energy dissipated in downstream fuse stages required for any additional pulse compression. A switch that satisfies these criteria, as well as other requirements such as that for high voltage operation associated with high power output, is an explosively driven switch consisting of large number of gaps arranged in series. The performance of this switch in limiting and/or interrupting currents produced by large generators has been studied. Single switch modules were designed and tested for limiting the commutating current output of 1 MW, 60 Hz, generator and 500 KJ capacitor banks. Current limiting and commutation were evaluated, using these sources, for currents ranging up to 0.4 MA. The explosive opening of the switch was found to provide an effective first stage for further pulse compression. It opens in tens of microseconds, commutates current at high efficiency ( = 905) recovers very rapidly over a wide range of operating conditions.

Low voltage driven RF MEMS capacitive switch using reinforcement for reduced buckling

NASA Astrophysics Data System (ADS)

Bansal, Deepak; Bajpai, Anuroop; Kumar, Prem; Kaur, Maninder; Kumar, Amit; Chandran, Achu; Rangra, Kamaljit

2017-02-01

Variation in actuation voltage for RF MEMS switches is observed as a result of stress-generated buckling of MEMS structures. Large voltage driven RF-MEMS switches are a major concern in space bound communication applications. In this paper, we propose a low voltage driven RF MEMS capacitive switch with the introduction of perforations and reinforcement. The performance of the fabricated switch is compared with conventional capacitive RF MEMS switches. The pull-in voltage of the switch is reduced from 70 V to 16.2 V and the magnitude of deformation is reduced from 8 µm to 1 µm. The design of the reinforcement frame enhances the structural stiffness by 46 % without affecting the high frequency response of the switch. The measured isolation and insertion loss of the reinforced switch is more than 20 dB and 0.4 dB over the X band range.

A solid-state dielectric elastomer switch for soft logic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chau, Nixon; Slipher, Geoffrey A., E-mail: geoffrey.a.slipher.civ@mail.mil; Mrozek, Randy A.

In this paper, we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle) ring oscillator. The solid-state switching material was integrated into our oscillator, which self-started after 16 s and performed 5 oscillations at a frequency of 1.05 Hz with 3.25 kV DC input. Our materials-by-design approach for the nickel filled polydimethylsiloxane based switch has resulted in significant improvements over previous carbon grease-based switches in four key areas, namely, sharpness of switching behavior upon applied stretch, magnitude of electrical resistance change, ease ofmore » manufacture, and production rate. Switch lifetime was demonstrated to be in the range of tens to hundreds of cycles with the current process. An interesting and potentially useful strain-based switching hysteresis behavior is also presented.« less

Resistive switching: An investigation of the bipolar–unipolar transition in Co-doped ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Santos, Daniel A.A., E-mail: danielandrade.ufs@gmail.com; Department of Physics, University at Buffalo, The State University of New York, Buffalo, NY 14260; Zeng, Hao

2015-06-15

Highlights: • A purely bipolar behavior on a Co-doped ZnO thin film has been demonstrated. • We have shown what can happen if a unipolar test is performed in a purely bipolar device. • An explanation for how a sample can show a purely bipolar switching behavior was suggested. • An important open issue about resistive switching effect was put in debate. - Abstract: In order to investigate the resistive switching effect we built devices in a planar structure in which two Al contacts were deposited on the top of the film and separated by a small gap using amore » shadow mask. Therefore, two samples of 10% Co-doped ZnO thin films were sputtered on glass substrate. High resolution X-ray diffraction (HRXRD) revealed a highly c-axis oriented crystalline structure, without secondary phase. The high resolution scanning electron microscopy (HRSEM) showed a flat surface with good coverage and thickness about 300 nm. A Keithley 2425 semiconductor characterization system was used to perform the resistive switching tests in the bipolar and unipolar modes. Considering only the effect of compliance current (CC), the devices showed a purely bipolar behavior since an increase in CC did not induce a transition to unipolar behavior.« less

Broadband terahertz-power extracting by using electron cyclotron maser.

PubMed

Pan, Shi; Du, Chao-Hai; Qi, Xiang-Bo; Liu, Pu-Kun

2017-08-04

Terahertz applications urgently require high performance and room temperature terahertz sources. The gyrotron based on the principle of electron cyclotron maser is able to generate watt-to-megawatt level terahertz radiation, and becomes an exceptional role in the frontiers of energy, security and biomedicine. However, in normal conditions, a terahertz gyrotron could generate terahertz radiation with high efficiency on a single frequency or with low efficiency in a relatively narrow tuning band. Here a frequency tuning scheme for the terahertz gyrotron utilizing sequentially switching among several whispering-gallery modes is proposed to reach high performance with broadband, coherence and high power simultaneously. Such mode-switching gyrotron has the potential of generating broadband radiation with 100-GHz-level bandwidth. Even wider bandwidth is limited by the frequency-dependent effective electrical length of the cavity. Preliminary investigation applies a pre-bunched circuit to the single-mode wide-band tuning. Then, more broadband sweeping is produced by mode switching in great-range magnetic tuning. The effect of mode competition, as well as critical engineering techniques on frequency tuning is discussed to confirm the feasibility for the case close to reality. This multi-mode-switching scheme could make gyrotron a promising device towards bridging the so-called terahertz gap.

RF MEMS microswitches design and characterization

NASA Astrophysics Data System (ADS)

Lafontan, Xavier; Dufaza, Christian; Robert, Michel; Perez, Guy; Pressecq, Francis

2000-08-01

This paper presents the work performed in MUMPs on RF MEMS micro-switch. Concepts, design and characterization of switches are studied. The study particularly focuses on the electrical resistance characterization and modelization. The switches developed uses two different principle: overflowed gold and hinged beam. The realized contacts exhibited high on resistance (~20(Omega) ) due to nanoscopics asperities of contacts and insulating interfacial films. Results of a typical contact cleaning method are also presented.

Design and implementation of optical switches based on nonlinear plasmonic ring resonators: Circular, square and octagon

NASA Astrophysics Data System (ADS)

Ghadrdan, Majid; Mansouri-Birjandi, Mohammad Ali

2018-05-01

In this paper, all-optical plasmonic switches (AOPS) based on various configurations of circular, square and octagon nonlinear plasmonic ring resonators (NPRR) were proposed and numerically investigated. Each of these configurations consisted of two metal-insulator-metal (MIM) waveguides coupled to each other by a ring resonator (RR). Nonlinear Kerr effect was used to show switching performance of the proposed NPRR. The result showed that the octagon switch structure had lower threshold power and higher transmission ratio than square and circular switch structures. The octagon switch structure had a low threshold power equal to 7.77 MW/cm2 and the high transmission ratio of approximately 0.6. Therefore, the octagon switch structure was an appropriate candidate to be applied in optical integration circuits as an AOPS.

Dynamically reconfigurable optical packet switch (DROPS)

NASA Astrophysics Data System (ADS)

Huang, Chi-Heng; Chou, Hsu-Feng; Bowers, John E.; Toudeh-Fallah, Farzam; Gyurek, Russ

2006-12-01

A novel Dynamically Reconfigurable Optical Packet Switch (DROPS) that combines both spectral and spatial switching capabilities is proposed and experimentally demonstrated for the first time. Compared with an Arrayed Waveguide Grating Router (AWGR), the added spatial switching capability provided by the microelectromechanical systems (MEMS) enables dynamically reconfigurable routing that is not possible with an AWGR alone. This methodology has several advantages over an AWGR including scalability, additional degrees of freedom in routing a packet from an ingress port to an egress port and more flexibility in path or line card recovery. The experimental demonstration implemented with 10-Gb/s packets shows that the added spatial switching does not degrade the bit-error-rate performance, indicating the promising potential of DROPS as a versatile and ultra-high capacity switch for optical packet-switched networks.

High peak power Q-switched Er:YAG laser with two polarizers and its ablation performance for hard dental tissues.

PubMed

Yang, Jingwei; Wang, Li; Wu, Xianyou; Cheng, Tingqing; Jiang, Haihe

2014-06-30

An electro-optically Q-switched high-energy Er:YAG laser with two polarizers is proposed. By using two Al(2)O(3) polarizing plates and a LiNbO(3) crystal with Brewster angle, the polarization efficiency is significantly improved. As a result, 226 mJ pulse energy with 62 ns pulse width is achieved at the repetition rate of 3 Hz, the corresponding peak power is 3.6 MW. To our knowledge, such a high peak power has not been reported in literature. With our designed laser, in-vitro teeth were irradiated under Q-switched and free-running modes. Results of a laser ablation experiment on hard dental tissue with the high-peak-power laser demonstrates that the Q-switched Er:YAG laser has higher ablation precision and less thermal damage than the free-running Er:YAG laser.

OPTICAL PROCESSING OF INFORMATION: Multistage optoelectronic two-dimensional image switches

NASA Astrophysics Data System (ADS)

Fedorov, V. B.

1994-06-01

The implementation principles and the feasibility of construction of high-throughput multistage optoelectronic switches, capable of transmitting data in the form of two-dimensional images along interconnected pairs of optical channels, are considered. Different ways of realising compact switches are proposed. They are based on the use of polarisation-sensitive elements, arrays of modulators of the plane of polarisation of light, arrays of objectives, and free-space optics. Optical systems of such switches can theoretically ensure that the resolution and optical losses in two-dimensional image transmission are limited only by diffraction. Estimates are obtained of the main maximum-performance parameters of the proposed optoelectronic image switches.

A low-latency high-port count optical switch with optical delay line buffering for disaggregated data centers

NASA Astrophysics Data System (ADS)

Moralis-Pegios, M.; Terzenidis, N.; Mourgias-Alexandris, G.; Vyrsokinos, K.; Pleros, N.

2018-02-01

Disaggregated Data Centers (DCs) have emerged as a powerful architectural framework towards increasing resource utilization and system power efficiency, requiring, however, a networking infrastructure that can ensure low-latency and high-bandwidth connectivity between a high-number of interconnected nodes. This reality has been the driving force towards high-port count and low-latency optical switching platforms, with recent efforts concluding that the use of distributed control architectures as offered by Broadcast-and-Select (BS) layouts can lead to sub-μsec latencies. However, almost all high-port count optical switch designs proposed so far rely either on electronic buffering and associated SerDes circuitry for resolving contention or on buffer-less designs with packet drop and re-transmit procedures, unavoidably increasing latency or limiting throughput. In this article, we demonstrate a 256x256 optical switch architecture for disaggregated DCs that employs small-size optical delay line buffering in a distributed control scheme, exploiting FPGA-based header processing over a hybrid BS/Wavelength routing topology that is implemented by a 16x16 BS design and a 16x16 AWGR. Simulation-based performance analysis reveals that even the use of a 2- packet optical buffer can yield <620nsec latency with >85% throughput for up to 100% loads. The switch has been experimentally validated with 10Gb/s optical data packets using 1:16 optical splitting and a SOA-MZI wavelength converter (WC) along with fiber delay lines for the 2-packet buffer implementation at every BS outgoing port, followed by an additional SOA-MZI tunable WC and the 16x16 AWGR. Error-free performance in all different switch input/output combinations has been obtained with a power penalty of <2.5dB.

Vibration Control via Stiffness Switching of Magnetostrictive Transducers

NASA Technical Reports Server (NTRS)

Scheidler, Justin J.; Asnani, Vivake M.; Dapino, Marcelo J.

2016-01-01

In this paper, a computational study is presented of structural vibration control that is realized by switching a magnetostrictive transducer between high and low stiffness states. Switching is accomplished by either changing the applied magnetic field with a voltage excitation or changing the shunt impedance on the transducer's coil (i.e., the magnetostrictive material's magnetic boundary condition). Switched-stiffness vibration control is simulated using a lumped mass supported by a damper and the magnetostrictive transducer (mount), which is represented by a nonlinear, electromechanical model. Free vibration of the mass is calculated while varying the mount's stiffness according to a reference switched-stiffness vibration control law. The results reveal that switching the magnetic field produces the desired change in stiffness, but also an undesired actuation force that can significantly degrade the vibration control. Hence, a modified switched-stiffness control law that accounts for the actuation force is proposed and implemented for voltage-controlled stiffness switching. The influence of the magneto-mechanical bias condition is also discussed. Voltage-controlled stiffness switching is found to introduce damping equivalent to a viscous damping factor up to about 0.13; this is shown to primarily result from active vibration reduction caused by the actuation force. The merit of magnetostrictive switched-stiffness vibration control is then quantified by comparing the results of voltage- and shunt-controlled stiffness switching to the performance of optimal magnetostrictive shunt damping. For the cases considered, optimal resistive shunt damping performed considerably better than both voltage- and shunt-controlled stiffness switching.

High Speed Switching in Magnetic Recording Media.

NASA Astrophysics Data System (ADS)

He, Lin

The magnetization switching behavior of magnetic particulate and metal evaporated thin film recording tapes in the nanosecond regime is studied. The purpose is to characterize the switching behavior of the magnetization in current recording media and determine whether the recording media will be a limiting factor in future high performance recording systems. In this work, a pulse test system with field pulse width tau<=ss than 1 nanosecond was created for measuring switching behavior. Two ways were used to characterize the switching behavior of the media. The first is a traditional way in which the switching behavior is determined by a switching coefficient S_{rm w}. The second is more useful and convenient. The switching behavior is described in terms of the increase in remanent coercivity H_{rm CR}(tau) as the field pulse width tau decreases. For high magnetic viscosity materials, the experimental results are in good agreement with the thermally assisted switching model proposed by Sharrock if the attempt frequency f _0 = 10^9 Hz and the exponent n = 0.5. For low magnetic viscosity materials, the results are in reasonable agreement with the Landau-Lifshitz-Gilbert -damping-limited switching model but only if values of the damping constant alpha ~ 1 are assumed, in conflict with the reported values extracted from ferromagnetic resonance measurements. The fundamental relationship between the two models through the fluctuation-dissipation theorem is emphasized and the need for a comprehensive model identified. The results have significant implications for future media where thermal effects will become increasingly important.

Bidirectional DC/DC Converter

NASA Astrophysics Data System (ADS)

Pedersen, F.

2008-09-01

The presented bidirectional DC/DC converter design concept is a further development of an already existing converter used for low battery voltage operation.For low battery voltage operation a high efficient low parts count DC/DC converter was developed, and used in a satellite for the battery charge and battery discharge function.The converter consists in a bidirectional, non regulating DC/DC converter connected to a discharge regulating Buck converter and a charge regulating Buck converter.The Bidirectional non regulating DC/DC converter performs with relatively high efficiency even at relatively high currents, which here means up to 35Amps.This performance was obtained through the use of power MOSFET's with on- resistances of only a few mille Ohms connected to a special transformer allowing paralleling several transistor stages on the low voltage side of the transformer. The design is patent protected. Synchronous rectification leads to high efficiency at the low battery voltages considered, which was in the range 2,7- 4,3 Volt DC.The converter performs with low switching losses as zero voltage zero current switching is implemented in all switching positions of the converter.Now, the drive power needed, to switch a relatively large number of low Ohm , hence high drive capacitance, power MOSFET's using conventional drive techniques would limit the overall conversion efficiency.Therefore a resonant drive consuming considerable less power than a conventional drive circuit was implemented in the converter.To the originally built and patent protected bidirectional non regulating DC/DC converter, is added the functionality of regulation.Hereby the need for additional converter stages in form of a Charge Buck regulator and a Discharge Buck regulator is eliminated.The bidirectional DC/DC converter can be used in connection with batteries, motors, etc, where the bidirectional feature, simple design and high performance may be useful.

Fault tolerant onboard packet switch architecture for communication satellites: Shared memory per beam approach

NASA Technical Reports Server (NTRS)

Shalkhauser, Mary JO; Quintana, Jorge A.; Soni, Nitin J.

1994-01-01

The NASA Lewis Research Center is developing a multichannel communication signal processing satellite (MCSPS) system which will provide low data rate, direct to user, commercial communications services. The focus of current space segment developments is a flexible, high-throughput, fault tolerant onboard information switching processor. This information switching processor (ISP) is a destination-directed packet switch which performs both space and time switching to route user information among numerous user ground terminals. Through both industry study contracts and in-house investigations, several packet switching architectures were examined. A contention-free approach, the shared memory per beam architecture, was selected for implementation. The shared memory per beam architecture, fault tolerance insertion, implementation, and demonstration plans are described.

Development and fabrication of improved power transistor switches

NASA Technical Reports Server (NTRS)

Hower, P. L.; Chu, C. K.

1979-01-01

A new class of high-voltage power transistors was achieved by adapting present interdigitated thyristor processing techniques to the fabrication of npn Si transistors. Present devices are 2.3 cm in diameter and have V sub CEO (sus) in the range of 400 to 600V. V sub CEO (sus) = 450V devices were made with an (h sub FE)(I sub C) product of 900A at V sub CE = 2.5V. The electrical performance obtained was consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The device design, wafer processing, and assembly techniques are described. Experimental measurements of the dc characteristics, forward SOA, and switching times are included. A new method of characterizing the switching performance of power transistors is proposed.

First Performance Results of the PIP2IT MEBT 200 Ohm Kicker Prototype

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saewert, G.; Awida, M. H.; Chase, B. E.

The PIP-II project is a program to upgrade the Fermilab accelerator complex. The PIP-II linac includes a 2.1 MeV Medium Energy Beam Transport (MEBT) section that incorporates a unique chopping system to perform arbitrary, bunch-by-bunch removal of 162.5 MHz structured beam. The MEBT chopping system will consist of two identical kickers working together and a beam absorber. One design of two having been proposed has been a 200 Ohm characteristic impedance traveling wave dual-helix kicker driven with custom designed high-speed switches. This paper reports on the first performance results of one prototype kicker built, installed and tested with beam at the PIP-II Injector Test (PIP2IT) facility. The helix deflector design details are discussed. The electrical performance of the high-speed switch driver operating at 500 V bias is presented. Tests performed were chopping beam at 81.25 MHz for microseconds as well as with a truly arbitrary pattern for 550more » $$\\mu$$s bursts having a 45 MHz average switching rate and repeating at 20 Hz.« less

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks

DOE PAGES

Shen, Yiwen; Hattink, Maarten; Samadi, Payman; ...

2018-04-13

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. Here, we present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly networkmore » testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 microsecond control plane latency for data-center and high performance computing platforms.« less

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen, Yiwen; Hattink, Maarten; Samadi, Payman

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. Here, we present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly networkmore » testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 microsecond control plane latency for data-center and high performance computing platforms.« less

Effects of high-dose ethanol intoxication and hangover on cognitive flexibility.

PubMed

Wolff, Nicole; Gussek, Philipp; Stock, Ann-Kathrin; Beste, Christian

2018-01-01

The effects of high-dose ethanol intoxication on cognitive flexibility processes are not well understood, and processes related to hangover after intoxication have remained even more elusive. Similarly, it is unknown in how far the complexity of cognitive flexibility processes is affected by intoxication and hangover effects. We performed a neurophysiological study applying high density electroencephalography (EEG) recording to analyze event-related potentials (ERPs) and perform source localization in a task switching paradigm which varied the complexity of task switching by means of memory demands. The results show that high-dose ethanol intoxication only affects task switching (i.e. cognitive flexibility processes) when memory processes are required to control task switching mechanisms, suggesting that even high doses of ethanol compromise cognitive processes when they are highly demanding. The EEG and source localization data show that these effects unfold by modulating response selection processes in the anterior cingulate cortex. Perceptual and attentional selection processes as well as working memory processes were only unspecifically modulated. In all subprocesses examined, there were no differences between the sober and hangover states, thus suggesting a fast recovery of cognitive flexibility after high-dose ethanol intoxication. We assume that the gamma-aminobutyric acid (GABAergic) system accounts for the observed effects, while they can hardly be explained by the dopaminergic system. © 2016 Society for the Study of Addiction.

Analysis and Design of a Novel W-band SPST Switch by Employing Full-Wave EM Simulator

NASA Astrophysics Data System (ADS)

Xu, Zhengbin; Guo, Jian; Qian, Cheng; Dou, Wenbin

2011-12-01

In this paper, a W-band single pole single throw (SPST) switch based on a novel PIN diode model is presented. The PIN diode is modeled using a full-wave electromagnetic (EM) simulator and its parasitic parameters under both forward and reverse bias states are described by a T-network. By this approach, the measurement-based model, which is usually a must for high performance switch design, is no longer necessary. A compensation structure is optimized to obtain a high isolation of the switch. Accordingly, a W-band SPST switch is designed using a full wave EM simulator. Measurement results agree very well with simulated ones. Our measurements show that the developed switch has less than 1.5 dB insertion loss under the `on' state from 88 GHz to 98 GHz. Isolation greater than 30 dB over 2 GHz bandwidth and greater than 20 dB over 5 GHz bandwidth can be achieved at the center frequency of 94 GHz under the `off' state.

Testing Single Phase IGBT H-Bridge Switch Plates for the High Voltage Converter Modulator at the Spallation Neutron Source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peplov, Vladimir V; Anderson, David E; Solley, Dennis J

2014-01-01

Three IGBT H-bridge switching networks are used in each High Voltage Converter Modulator (HVCM) system at the Spallation Neutron Source (SNS) to generate drive currents to three boost transformer primaries switching between positive and negative bus voltages at 20 kHz. Every switch plate assembly is tested before installing it into an operational HVCM. A Single Phase Test Stand has been built for this purpose, and it is used for adjustment, measurement and testing of different configurations of switch plates. This paper will present a description of the Test Stand configuration and discuss the results of testing switch plates with twomore » different types of IGBT gate drivers currently in use on the HVCM systems. Comparison of timing characteristics of the original and new drivers and the resulting performance reinforces the necessity to replace the original H-bridge network drivers with the upgraded units.« less

The 77 K operation of a multi-resonant power converter

NASA Technical Reports Server (NTRS)

Ray, Biswajit; Gerber, Scott S.; Patterson, Richard L.; Myers, Ira T.

1995-01-01

The liquid-nitrogen temperature (77 K) operation of a 55 W, 200 kHz, 48/28 V zero-voltage switching multi-resonant dc/dc converter designed with commercially available components is reported. Upon dipping the complete converter (power and control circuits) into liquid-nitrogen, the converter performance improved as compared to the room-temperature operation. The switching frequency, resonant frequency, and the characteristic impedance did not change significantly. Accordingly, the zero-voltage switching was maintained from no-load to full-load for the specified line variations. Cryoelectronics can provide high density power converters, especially for high power applications.

Monolithic FET structures for high-power control component applications

NASA Astrophysics Data System (ADS)

Shifrin, Mitchell B.; Katzin, Peter J.; Ayasli, Yalcin

1989-12-01

A monolithic FET switch is described that can be integrated with other monolithic functions or used as a discrete component in a microwave integrated circuit structure. This device increases the power-handling capability of the conventional single FET switch by an order of magnitude. It does this by overcoming the breakdown voltage limitation of the FET device. The design, fabrication, and performance of two high-power control components using these circuits are described as examples of the implementation of this technology. They are an L-band terminated single-pole, single-throw (SPST) switch and an L-band limiter).

Ultrawide band switching: gas and oil breakdown research

NASA Astrophysics Data System (ADS)

Agee, Forrest J.; Lehr, Jane M.; Prather, William D.; Scholfield, David W.

1997-10-01

The generation of Ultra-Wide Band Pulses nanoseconds is a challenging problem that involves generating pulses with 100 pico-second rise times and voltage of 500 kV with pulse widths of the order of less than one to a few nanoseconds. A critical step involves switching high voltages with precision. The use of both gas and oil for the switching insulating medium have been accomplished with varying results. The Phillips Laboratory is pursuing both media in the gas switched Hindenburg series of pulsers and in the study of oil switches that promise good performance in compact packages. This paper reports on progress in gas switching associated with the new H-5 pulser and with the use of earlier Hindenburg pulsers to investigate the UWB properties of oil switches. We compare the design strategies and techniques of oil and gas switching in the context of pulsers of interest.

Efficient 2-μm Tm:YAP Q-switched and CW lasers

NASA Astrophysics Data System (ADS)

Hays, A. D.; Cole, Brian; King, Vernon; Goldberg, Lew

2018-02-01

Highly efficient, diode pumped Tm:YAP lasers generating emission in the 1.85-1.94 μm range are demonstrated and characterized. Laser optical efficiencies of 51% and 45%, and electrical efficiencies of 31% and 25% are achieved under CW and Q-switched operation, respectively. Laser performance was characterized for maximum average powers up to 20W with various cavity configurations, all using an intra-cavity lens to compensate for thermal lensing in the Tm:YAP crystal. Q-switched lasers incorportating a Cr:ZnS saturable absorber (SA), resonant mechanical mirror scanner, or acousto-optic modulator were characterized. To enable higher average output powers, measurements of the thermal lens were conducted for the Tm:YAP crystal as a function of pump power and were compared to values predicted by a finiteelement- analysis (FEA) thermal-optical model of the Tm:YAP crystal. A resonator model is developed to incorporate this calculated thermal lens and its effect on laser performance. This paper will address approaches for improving the performance of Tm:YAP lasers, and means for achieving increased average output powers while maintaining high optical efficiency for both SA and mechanical Q-switching.

Performance analysis of resistive switching devices based on BaTiO3 thin films

NASA Astrophysics Data System (ADS)

Samardzic, Natasa; Kojic, Tijana; Vukmirovic, Jelena; Tripkovic, Djordjije; Bajac, Branimir; Srdic, Vladimir; Stojanovic, Goran

2016-03-01

Resitive switching devices, memristors, have recenty attracted much attention due to promising performances and potential applications in the field of logic and memory devices. Here, we present thin film BaTiO3 based memristor fabricated using ink-jet printing technique. Active material is a single layer barium titanate film with thickness of ̴100 nm, sandwitched between metal electodes. Printing parameters were optimized aiming to achieve stable drop flow and uniform printed layer. Current-voltage characteristics show typical memristive behavior with pinched hysteresis loop crossed at the origin, with marked differences between High Resistive State (HRS) and Low Resistive State (LRS). Obtained resistive states are stable during numerous switching processes. The device also shows unipolar switching effect for negative voltage impulses. Variable voltage impulse amplitudes leads to the shifting of the energy levels of electode contacts resulting in changing of the overall current through the device. Structural charcterization have been performed using XRD analysis and SEM micrography. High-temperature current-voltage measurements combined with transport parameter analysis using Hall efect measurement system (HMS 3000) and Impedance Analyzer AC measurements allows deeper insigth into conduction mechanism of ferroelectric memristors.

Advanced Motor Drives Studies

NASA Technical Reports Server (NTRS)

Ehsani, M.; Tchamdjou, A.

1997-01-01

This report presents an evaluation of advanced motor drive systems as a replacement for the hydrazine fueled APU units. The replacement technology must meet several requirements which are particular to the space applications and the Orbiter in general. Some of these requirements are high efficiency, small size, high power density. In the first part of the study several motors are compared, based on their characteristics and in light of the Orbiter requirements. The best candidate, the brushless DC is chosen because of its particularly good performance with regards to efficiency. Several power electronics drive technologies including the conventional three-phase hard switched and several soft-switched inverters are then presented. In the last part of the study, a soft-switched inverter is analyzed and compared to its conventional hard-switched counterpart. Optimal efficiency is a basic requirement for space applications and the soft-switched technology represents an unavoidable trend for the future.

On-board demux/demod

NASA Technical Reports Server (NTRS)

Sayegh, S.; Kappes, M.; Thomas, J.; Snyder, J.; Eng, M.; Poklemba, John J.; Steber, M.; House, G.

1991-01-01

To make satellite channels cost competitive with optical cables, the use of small, inexpensive earth stations with reduced antenna size and high powered amplifier (HPA) power will be needed. This will necessitate the use of high e.i.r.p. and gain-to-noise temperature ratio (G/T) multibeam satellites. For a multibeam satellite, onboard switching is required in order to maintain the needed connectivity between beams. This switching function can be realized by either an receive frequency (RF) or a baseband unit. The baseband switching approach has the additional advantage of decoupling the up-link and down-link, thus enabling rate and format conversion as well as improving the link performance. A baseband switching satellite requires the demultiplexing and demodulation of the up-link carriers before they can be switched to their assigned down-link beams. Principles of operation, design and implementation issues of such an onboard demultiplexer/demodulator (bulk demodulator) that was recently built at COMSAT Labs. are discussed.

Low loss millimeter-wave switches based on the Vanadium Dioxide Metal - Insulator - Transition

NASA Astrophysics Data System (ADS)

Field, Mark; Hillman, Christopher; Stupar, Philip; Griffith, Zachary; Rodwell, Mark

2014-03-01

A new ultra-low-loss and broad band millimeter wave switch technology based on the reversible metal / insulator phase transition of vanadium dioxide has been developed. We report having fabricated series configured, single-pole single-throw (SPST) switches having measured S-parameters from DC to 110 GHz. The on-state insertion loss is 0.2 dB and off-state isolation is 21 dB at 50 GHz. The resulting impedance contrast ratio, ZOFF / ZON, is greater than 500:1 at 50 GHz (i.e. cut-off frequency fc ~ 40 THz). As a demonstration of the technology's utility, we also present the results of a 2-bit real time delay phase shifter incorporating a pair of VO2 SP4T switches. This switch technology's high impedance contrast ratio combined with its compactness, ease of integration, and low voltage operation make it an enabler of previously unachievable high-performance millimeter wave FPGAs.

Long-lasting effects of performance-contingent unconscious and conscious reward incentives during cued task-switching.

PubMed

Capa, Rémi L; Bouquet, Cédric A; Dreher, Jean-Claude; Dufour, André

2013-01-01

Motivation is often thought to interact consciously with executive control, although recent studies have indicated that motivation can also be unconscious. To date, however, the effects of unconscious motivation on high-order executive control functions have not been explored. Only a few studies using subliminal stimuli (i.e., those not related to motivation, such as an arrow to prime a response) have reported short-lived effects on high-order executive control functions. Here, building on research on unconscious motivation, in which a behavior of perseverance is induced to attain a goal, we hypothesized that subliminal motivation can have long-lasting effects on executive control processes. We investigated the impact of unconscious/conscious monetary reward incentives on evoked potentials and neural activity dynamics during cued task-switching performance. Participants performed long runs of task-switching. At the beginning of each run, a reward (50 cents or 1 cent) was displayed, either subliminally or supraliminally. Participants earned the reward contingent upon their correct responses to each trial of the run. A higher percentage of runs was achieved with higher (conscious and unconscious) than lower rewards, indicating that unconscious high rewards have long-lasting behavioral effects. Event-related potential (ERP) results indicated that unconscious and conscious rewards influenced preparatory effort in task preparation, as suggested by a greater fronto-central contingent negative variation (CNV) starting at cue-onset. However, a greater parietal P3 associated with better reaction times (RTs) was observed only under conditions of conscious high reward, suggesting a larger amount of working memory invested during task performance. Together, these results indicate that unconscious and conscious motivations are similar at early stages of task-switching preparation but differ during task performance. Copyright © 2012 Elsevier Ltd. All rights reserved.

All-optical switching in silicon-on-insulator photonic wire nano-cavities.

PubMed

Belotti, Michele; Galli, Matteo; Gerace, Dario; Andreani, Lucio Claudio; Guizzetti, Giorgio; Md Zain, Ahmad R; Johnson, Nigel P; Sorel, Marc; De La Rue, Richard M

2010-01-18

We report on experimental demonstration of all-optical switching in a silicon-on-insulator photonic wire nanocavity operating at telecom wavelengths. The switching is performed with a control pulse energy as low as approximately 0.1 pJ on a cavity device that presents very high signal transmission, an ultra-high quality-factor, almost diffraction-limited modal volume and a footprint of only 5 microm(2). High-speed modulation of the cavity mode is achieved by means of optical injection of free carriers using a nanosecond pulsed laser. Experimental results are interpreted by means of finite-difference time-domain simulations. The possibility of using this device as a logic gate is also demonstrated.

Thermal management and performance evaluation of a dual bi-directional, soft-switched IGBT-based inverter for the 1st autonomous microgrid power system in Taiwan under various operating conditions

NASA Astrophysics Data System (ADS)

Chang, Tien-Chan; Fuh, Yiin-Kuen; Lu, Hong-Yi; Tu, Sheng-Xun

2016-06-01

The thermal management of the inverter system is of great importance since very high voltage/current will be switched intermittently and/or continuously and high temperature is excruciably detrimental to the service life of electronics, especially for the switching devices such as insulated gate bipolar transistor (IGBT). In this study, a newly developed dual bi-directional IGBT-based inverter in conjunction with autonomous microgrid system is investigated with particular focus on the thermal management and performance evaluation under various operation conditions. Locally enhanced heat transfer approach such as oblique orientation and heat dissipating materials are experimentally investigated. The studied inverter system is initially packaged by a galvanized steel plate (size 62 × 48 × 18 cm) and the switching power is set in the range of 0.5-3 kW. The module is operated at the switching and pulse frequencies of 60 Hz and 20 kHz, respectively. The adoption of heat dissipating material in either paste or film form had experimentally shown to possess the flexibility tailoring heat transfer performance locally. Experimental studies of heat dissipating film with various hotspot scenarios showed that the temperature difference can be appreciably reduced as much as 13.1 and 15.4 °C, respectively with facilitation of one- and two-layers of heat dissipating film. From the measurement results, the measured peak temperature is highly dominated by the thickness of heat dissipating film, showing the dominance of thickness-dependent thermal resistance and resultant heat accumulation phenomena.

High-Efficiency Helical Coil Electromagnetic Launcher and High Power Hall-Effect Switch

DTIC Science & Technology

2008-02-29

also given that demonstrate significant launcher performance benefits by super-cooling the armature (i.e., using liquid nitrogen ). 14. ABSTRACT... liquid nitrogen temperatures). A computer model for a magnetically-controlled Hall-effect switch is developed. The model is constructed in the PSpice...of super-cooling is demonstrated with liquid nitrogen cooling and indicates super-cooled EML operation is desirable if cryo-cooling is practical for

A Soft-Switching Inverter for High-Temperature Advanced Hybrid Electric Vehicle Traction Motor Drives

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lai, Jason; Yu, Wensong; Sun, Pengwei

2012-03-31

The state-of-the-art hybrid electric vehicles (HEVs) require the inverter cooling system to have a separate loop to avoid power semiconductor junction over temperatures because the engine coolant temperature of 105°C does not allow for much temperature rise in silicon devices. The proposed work is to develop an advanced soft-switching inverter that will eliminate the device switching loss and cut down the power loss so that the inverter can operate at high-temperature conditions while operating at high switching frequencies with small current ripple in low inductance based permanent magnet motors. The proposed tasks also include high-temperature packaging and thermal modeling andmore » simulation to ensure the packaged module can operate at the desired temperature. The developed module will be integrated with the motor and vehicle controller for dynamometer and in-vehicle testing to prove its superiority. This report will describe the detailed technical design of the soft-switching inverters and their test results. The experiments were conducted both in module level for the module conduction and switching characteristics and in inverter level for its efficiency under inductive and dynamometer load conditions. The performance will be compared with the DOE original specification.« less

A Superconducting Dual-Channel Photonic Switch.

PubMed

Srivastava, Yogesh Kumar; Manjappa, Manukumara; Cong, Longqing; Krishnamoorthy, Harish N S; Savinov, Vassili; Pitchappa, Prakash; Singh, Ranjan

2018-06-05

The mechanism of Cooper pair formation and its underlying physics has long occupied the investigation into high temperature (high-T c ) cuprate superconductors. One of the ways to unravel this is to observe the ultrafast response present in the charge carrier dynamics of a photoexcited specimen. This results in an interesting approach to exploit the dissipation-less dynamic features of superconductors to be utilized for designing high-performance active subwavelength photonic devices with extremely low-loss operation. Here, dual-channel, ultrafast, all-optical switching and modulation between the resistive and the superconducting quantum mechanical phase is experimentally demonstrated. The ultrafast phase switching is demonstrated via modulation of sharp Fano resonance of a high-T c yttrium barium copper oxide (YBCO) superconducting metamaterial device. Upon photoexcitation by femtosecond light pulses, the ultrasensitive cuprate superconductor undergoes dual dissociation-relaxation dynamics, with restoration of superconductivity within a cycle, and thereby establishes the existence of dual switching windows within a timescale of 80 ps. Pathways are explored to engineer the secondary dissociation channel which provides unprecedented control over the switching speed. Most importantly, the results envision new ways to accomplish low-loss, ultrafast, and ultrasensitive dual-channel switching applications that are inaccessible through conventional metallic and dielectric based metamaterials. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-speed pulsed mixing in a short distance with high-frequency switching of pumping from three inlets

NASA Astrophysics Data System (ADS)

Sugano, K.; Nakata, A.; Tsuchiya, T.; Tabata, O.

2015-08-01

In this study, we propose a mixing method using alternate pulsed flows from three inlets with flow direction control. In conventional pulsed mixing, a residual flow near the sidewalls inhibits the rapid mixing of two solutions at high switching frequency. In this study, we addressed this issue in order to perform rapid mixing in a short distance with a low Reynolds number. We fabricated a microfluidic mixing device consisting of a cross-shaped mixing channel with three inlet microchannels and three valveless micropumps. In conventional T-shaped or Y-shaped mixing channels, a residual flow is observed because of the incomplete switching of solutions. The three inlet configuration enabled us to split the residual flow at a switching frequency of pumping of up to 200 Hz, thus resulting in rapid mixing. Furthermore, by controlling the flow direction at the confluent area using the reverse flow of the micropump, the mixing speed was dramatically increased because of the complete switching of the two solutions. As a result, we achieved the mixing time of 3.6 ms and the mixing length of 20.7 µm, which were necessary to achieve a 90% mixing ratio at a high micropump switching frequency of 400 Hz and reverse flow ratio of 1/4.

High frequency switched-mode stimulation can evoke post synaptic responses in cerebellar principal neurons

PubMed Central

van Dongen, Marijn N.; Hoebeek, Freek E.; Koekkoek, S. K. E.; De Zeeuw, Chris I.; Serdijn, Wouter A.

2015-01-01

This paper investigates the efficacy of high frequency switched-mode neural stimulation. Instead of using a constant stimulation amplitude, the stimulus is switched on and off repeatedly with a high frequency (up to 100 kHz) duty cycled signal. By means of tissue modeling that includes the dynamic properties of both the tissue material as well as the axon membrane, it is first shown that switched-mode stimulation depolarizes the cell membrane in a similar way as classical constant amplitude stimulation. These findings are subsequently verified using in vitro experiments in which the response of a Purkinje cell is measured due to a stimulation signal in the molecular layer of the cerebellum of a mouse. For this purpose a stimulator circuit is developed that is able to produce a monophasic high frequency switched-mode stimulation signal. The results confirm the modeling by showing that switched-mode stimulation is able to induce similar responses in the Purkinje cell as classical stimulation using a constant current source. This conclusion opens up possibilities for novel stimulation designs that can improve the performance of the stimulator circuitry. Care has to be taken to avoid losses in the system due to the higher operating frequency. PMID:25798105

Design of RF MEMS switches without pull-in instability

NASA Astrophysics Data System (ADS)

Proctor, W. Cyrus; Richards, Gregory P.; Shen, Chongyi; Skorczewski, Tyler; Wang, Min; Zhang, Jingyan; Zhong, Peng; Massad, Jordan E.; Smith, Ralph

2010-04-01

Micro-electro-mechanical systems (MEMS) switches for radio-frequency (RF) signals have certain advantages over solid-state switches, such as lower insertion loss, higher isolation, and lower static power dissipation. Mechanical dynamics can be a determining factor for the reliability of RF MEMS. The RF MEMS ohmic switch discussed in this paper consists of a plate suspended over an actuation pad by four double-cantilever springs. Closing the switch with a simple step actuation voltage typically causes the plate to rebound from its electrical contacts. The rebound interrupts the signal continuity and degrades the performance, reliability and durability of the switch. The switching dynamics are complicated by a nonlinear, electrostatic pull-in instability that causes high accelerations. Slow actuation and tailored voltage control signals can mitigate switch bouncing and effects of the pull-in instability; however, slow switching speed and overly-complex input signals can significantly penalize overall system-level performance. Examination of a balanced and optimized alternative switching solution is sought. A step toward one solution is to consider a pull-in-free switch design. In this paper, determine how simple RC-circuit drive signals and particular structural properties influence the mechanical dynamics of an RF MEMS switch designed without a pull-in instability. The approach is to develop a validated modeling capability and subsequently study switch behavior for variable drive signals and switch design parameters. In support of project development, specifiable design parameters and constraints will be provided. Moreover, transient data of RF MEMS switches from laser Doppler velocimetry will be provided for model validation tasks. Analysis showed that a RF MEMS switch could feasibly be designed with a single pulse waveform and no pull-in instability and achieve comparable results to previous waveform designs. The switch design could reliably close in a timely manner, with small contact velocity, usually with little to no rebound even when considering manufacturing variability.

Built-in self-test (BIST) techniques for millimeter wave CMOS transceivers

NASA Astrophysics Data System (ADS)

Mahzabeen, Tabassum

The seamless integration of complementary metal oxide semiconductor (CMOS) transceivers with a digital CMOS process enhances on-chip testability, thus reducing production and testing costs. Built in self testability also improves yield by offering on-chip compensation. This work focuses on built in self test techniques for CMOS based millimeter wave (mm-wave) transceivers. Built-in-self-test (BIST) using the loopback method is one cost-effective method for testing these transceivers. Since the loopback switch is always present during the normal operation of the transceiver, the requirement of the switch is different than for a conventional switch. The switch needs to have high isolation and high impedance during its OFF period. Two 80 GHz single pole single throw (SPST) switches have been designed, fabricated in standard CMOS process, and measured to connect the loopback path for BIST applications. The loopback switches in this work provide the required criteria for loopback BIST. A stand alone 80 GHz low noise amplifier (LNA) and the same LNA integrated with one of the loopback switches have been fabricated, and measured to observe the difference in performance when the loopback switch is present. Besides the loopback switch, substrate leakage also forms a path between the transmitter and receiver. Substrate leakage has been characterized as a function of distance between the transmitter and receiver for consideration in using the BIST method. A BIST algorithm has been developed to estimate the process variation in device sizes by probing a low frequency ring oscillator to estimate the device variation and map this variation to the 80 GHz LNA. Probing a low frequency circuit is cheaper compared to the probing of a millimeter wave circuit and reduces the testing costs. The performance of the LNA degrades due to variation in device size. Once the shift in the device size is being estimated (from the ring oscillator's shifted frequency), the LNA's performance can be recovered using several methods; for example, using tunable transmission line lengths in the amplifier or using a variable supply voltage. This concept of estimating process variation has been demonstrated in Agilent Design System (ADS).

Design Sketches For Optical Crossbar Switches Intended For Large-Scale Parallel Processing Applications

NASA Astrophysics Data System (ADS)

Hartmann, Alfred; Redfield, Steve

1989-04-01

This paper discusses design of large-scale (1000x 1000) optical crossbar switching networks for use in parallel processing supercom-puters. Alternative design sketches for an optical crossbar switching network are presented using free-space optical transmission with either a beam spreading/masking model or a beam steering model for internodal communications. The performances of alternative multiple access channel communications protocol-unslotted and slotted ALOHA and carrier sense multiple access (CSMA)-are compared with the performance of the classic arbitrated bus crossbar of conventional electronic parallel computing. These comparisons indicate an almost inverse relationship between ease of implementation and speed of operation. Practical issues of optical system design are addressed, and an optically addressed, composite spatial light modulator design is presented for fabrication to arbitrarily large scale. The wide range of switch architecture, communications protocol, optical systems design, device fabrication, and system performance problems presented by these design sketches poses a serious challenge to practical exploitation of highly parallel optical interconnects in advanced computer designs.

A Low-Cost CMOS Programmable Temperature Switch

PubMed Central

Li, Yunlong; Wu, Nanjian

2008-01-01

A novel uncalibrated CMOS programmable temperature switch with high temperature accuracy is presented. Its threshold temperature Tth can be programmed by adjusting the ratios of width and length of the transistors. The operating principles of the temperature switch circuit is theoretically explained. A floating gate neural MOS circuit is designed to compensate automatically the threshold temperature Tth variation that results form the process tolerance. The switch circuit is implemented in a standard 0.35 μm CMOS process. The temperature switch can be programmed to perform the switch operation at 16 different threshold temperature Tths from 45—120°C with a 5°C increment. The measurement shows a good consistency in the threshold temperatures. The chip core area is 0.04 mm2 and power consumption is 3.1 μA at 3.3V power supply. The advantages of the temperature switch are low power consumption, the programmable threshold temperature and the controllable hysteresis. PMID:27879871

Video signal processing system uses gated current mode switches to perform high speed multiplication and digital-to-analog conversion

NASA Technical Reports Server (NTRS)

Gilliland, M. G.; Rougelot, R. S.; Schumaker, R. A.

1966-01-01

Video signal processor uses special-purpose integrated circuits with nonsaturating current mode switching to accept texture and color information from a digital computer in a visual spaceflight simulator and to combine these, for display on color CRT with analog information concerning fading.

Electro-optical 1 x 2, 1 x N and N x N fiber-optic and free-space switching over 1.55 to 3.0 μm using a Ge-Ge(2)Sb(2)Te(5)-Ge prism structure.

PubMed

Hendrickson, Joshua; Soref, Richard; Sweet, Julian; Majumdar, Arka

2015-01-12

New device designs are proposed and theoretical simulations are performed on electro-optical routing switches in which light beams enter and exit the device either from free space or from lensed fibers. The active medium is a ~100 nm layer of phase change material (Ge(2)Sb(2)Te(5) or GeTe) that is electrically "triggered" to change its phase, giving "self-holding" behavior in each of two phases. Electrical current is supplied to that film by a pair of transparent highly doped conducting Ge prisms on both sides of the layer. For S-polarized light incident at ~80° on the film, a three-layer Fabry-Perot analysis, including dielectric loss, predicts good 1 x 2 and 2 x 2 switch performance at infrared wavelengths of 1.55, 2.1 and 3.0 μm, although the performance at 1.55 μm is degraded by material loss and prism mismatch. Proposals for in-plane and volumetric 1 x 4 and 4 x 4 switches are also presented. An unpolarized 1 x 2 switch projects good performance at mid infrared.

RF performance of GaAs pHEMT switches with various upper/lower δ-doped ratio designs

NASA Astrophysics Data System (ADS)

Chiu, Hsien-Chin; Fu, Jeffrey S.; Chen, Chung-Wen

2009-02-01

AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor (pHEMT) single-pole-single-throw (SPST) switches with various upper/lower δ-doped ratio designs were fabricated and investigated for the first time. Both off-state capacitance and the specific on-resistance ( Ron) of pHEMT are dominated factors and showed characteristics of sensitive to upper/lower δ-doped ratio for RF switch applications. By adopting the series-shunt architecture, upper/lower ratio of 3:1 switch achieved the lowest insertion loss compared to 4:1 design owing to the device shunt to ground (M2) of 4:1 design exhibited a worse fundamental signal isolation especially at high power level. As to the isolation under same architecture, however, due to the lowest Ron can be obtained, the 4:1 design provided better isolation performance. In addition, the M2 also dominated the second and third harmonics suppression and meanwhile, the lowest Ron of 4:1 design was found to be beneficial to the reduction of the harmonics power transmitted to the output terminal.

Brownmillerite thin films as fast ion conductors for ultimate-performance resistance switching memory.

PubMed

Acharya, Susant Kumar; Jo, Janghyun; Raveendra, Nallagatlla Venkata; Dash, Umasankar; Kim, Miyoung; Baik, Hionsuck; Lee, Sangik; Park, Bae Ho; Lee, Jae Sung; Chae, Seung Chul; Hwang, Cheol Seong; Jung, Chang Uk

2017-07-27

An oxide-based resistance memory is a leading candidate to replace Si-based flash memory as it meets the emerging specifications for future memory devices. The non-uniformity in the key switching parameters and low endurance in conventional resistance memory devices are preventing its practical application. Here, a novel strategy to overcome the aforementioned challenges has been unveiled by tuning the growth direction of epitaxial brownmillerite SrFeO 2.5 thin films along the SrTiO 3 [111] direction so that the oxygen vacancy channels can connect both the top and bottom electrodes rather directly. The controlled oxygen vacancy channels help reduce the randomness of the conducting filament (CF). The resulting device displayed high endurance over 10 6 cycles, and a short switching time of ∼10 ns. In addition, the device showed very high uniformity in the key switching parameters for device-to-device and within a device. This work demonstrates a feasible example for improving the nanoscale device performance by controlling the atomic structure of a functional oxide layer.

Effect of AlN layer on the bipolar resistive switching behavior in TiN thin film based ReRAM device for non-volatile memory application

NASA Astrophysics Data System (ADS)

Prakash, Ravi; Kaur, Davinder

2018-05-01

The effect of an additional AlN layer in the Cu/TiN/AlN/Pt stack configuration deposited using sputtering has been investigated. The Cu/TiN/AlN/Pt device shows a tristate resistive switching. Multilevel switching is facilitated by ionic and metallic filament formation, and the nature of the filaments formed is confirmed by performing a resistance vs. temperature measurement. Ohmic behaviour and trap controlled space charge limited current (SCLC) conduction mechanisms are confirmed as dominant conduction mechanism at low resistance state (LRS) and high resistance state (HRS). High resistance ratio (102) corresponding to HRS and LRS, good write/erase endurance (105) and non-volatile long retention (105s) are also observed. Higher thermal conductivity of the AlN layer is the main reasons for the enhancement of resistive switching performance in Cu/TiN/AlN/Pt cell. The above result suggests the feasibility of Cu/TiN/AlN/Pt devices for multilevel nonvolatile ReRAM application.

Hyperswitch Network For Hypercube Computer

NASA Technical Reports Server (NTRS)

Chow, Edward; Madan, Herbert; Peterson, John

1989-01-01

Data-driven dynamic switching enables high speed data transfer. Proposed hyperswitch network based on mixed static and dynamic topologies. Routing header modified in response to congestion or faults encountered as path established. Static topology meets requirement if nodes have switching elements that perform necessary routing header revisions dynamically. Hypercube topology now being implemented with switching element in each computer node aimed at designing very-richly-interconnected multicomputer system. Interconnection network connects great number of small computer nodes, using fixed hypercube topology, characterized by point-to-point links between nodes.

Opportunity of spinel ferrite materials in nonvolatile memory device applications based on their resistive switching performances.

PubMed

Hu, Wei; Qin, Ni; Wu, Guangheng; Lin, Yanting; Li, Shuwei; Bao, Dinghua

2012-09-12

The opportunity of spinel ferrites in nonvolatile memory device applications has been demonstrated by the resistive switching performance characteristics of a Pt/NiFe(2)O(4)/Pt structure, such as low operating voltage, high device yield, long retention time (up to 10(5) s), and good endurance (up to 2.2 × 10(4) cycles). The dominant conduction mechanisms are Ohmic conduction in the low-resistance state and in the lower-voltage region of the high-resistance state and Schottky emission in the higher-voltage region of the high-resistance state. On the basis of measurements of the temperature dependence of the resistances and magnetic properties in different resistance states, we explain the physical mechanism of resistive switching of Pt/NiFe(2)O(4)/Pt devices using the model of formation and rupture of conducting filaments by considering the thermal effect of oxygen vacancies and changes in the valences of cations due to the redox effect.

High-speed electro-optic switch based on nonlinear polymer-clad waveguide incorporated with quasi-in-plane coplanar waveguide electrodes

NASA Astrophysics Data System (ADS)

Jiang, Ming-Hui; Wang, Xi-Bin; Xu, Qiang; Li, Ming; Niu, Dong-Hai; Sun, Xiao-Qiang; Wang, Fei; Li, Zhi-Yong; Zhang, Da-Ming

2018-01-01

Nonlinear optical (NLO) polymer is a promising material for active waveguide devices that can provide large bandwidth and high-speed response time. However, the performance of the active devices is not only related to the waveguide materials, but also related to the waveguide and electrode structures. In this paper, a high-speed Mach-Zehnder interferometer (MZI) type of electro-optic (EO) switch based on NLO polymer-clad waveguide was fabricated. The quasi-in-plane coplanar waveguide electrodes were also introduced to enhance the poling and modulating efficiency. The characteristic parameters of the waveguide and electrode were carefully designed and simulated. The switches were fabricated by the conventional micro-fabrication process. Under 1550-nm operating wavelength, a typical fabricated switch showed a low insertion loss of 10.2 dB, and the switching rise time and fall time were 55.58 and 57.98 ns, respectively. The proposed waveguide and electrode structures could be developed into other active EO devices and also used as the component in the polymer-based large-scale photonic integrated circuit.

Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs

NASA Technical Reports Server (NTRS)

Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Iannello, Christopher J.; Del Castillo, Linda Y.; Fitzpatrick, Fred D.; Mojarradi, Mohammad M.;

Transmission line transformer for reliable and low-jitter triggering of a railgap switch

NASA Astrophysics Data System (ADS)

Verma, Rishi; Mishra, Ekansh; Sagar, Karuna; Meena, Manraj; Shyam, Anurag

2014-09-01

The performance of railgap switch critically relies upon multichannel breakdown between the extended electrodes (rails) in order to ensure distributed current transfer along electrode length and to minimize the switch inductance. The initiation of several simultaneous arc channels along the switch length depends on the gap triggering technique and on the rate at which the electric field changes within the gap. This paper presents design, construction, and output characteristics of a coaxial cable based three-stage transmission line transformer (TLT) that is capable of initiating multichannel breakdown in a high voltage, low inductance railgap switch. In each stage three identical lengths of URM67 coaxial cables have been used in parallel and they have been wounded in separate cassettes to enhance the isolation of the output of transformer from the input. The cascaded output impedance of TLT is ˜50 Ω. Along with multi-channel formation over the complete length of electrode rails, significant reduction in jitter (≤2 ns) and conduction delay (≤60 ns) has been observed by the realization of large amplitude (˜80 kV), high dV/dt (˜6 kV/ns) pulse produced by the indigenously developed TLT based trigger generator. The superior performance of TLT over conventional pulse transformer for railgap triggering application has been compared and demonstrated experimentally.

Transmission line transformer for reliable and low-jitter triggering of a railgap switch.

PubMed

Verma, Rishi; Mishra, Ekansh; Sagar, Karuna; Meena, Manraj; Shyam, Anurag

2014-09-01

The performance of railgap switch critically relies upon multichannel breakdown between the extended electrodes (rails) in order to ensure distributed current transfer along electrode length and to minimize the switch inductance. The initiation of several simultaneous arc channels along the switch length depends on the gap triggering technique and on the rate at which the electric field changes within the gap. This paper presents design, construction, and output characteristics of a coaxial cable based three-stage transmission line transformer (TLT) that is capable of initiating multichannel breakdown in a high voltage, low inductance railgap switch. In each stage three identical lengths of URM67 coaxial cables have been used in parallel and they have been wounded in separate cassettes to enhance the isolation of the output of transformer from the input. The cascaded output impedance of TLT is ~50 Ω. Along with multi-channel formation over the complete length of electrode rails, significant reduction in jitter (≤2 ns) and conduction delay (≤60 ns) has been observed by the realization of large amplitude (~80 kV), high dV/dt (~6 kV/ns) pulse produced by the indigenously developed TLT based trigger generator. The superior performance of TLT over conventional pulse transformer for railgap triggering application has been compared and demonstrated experimentally.

Resistive switching and memory effects of AgI thin film

NASA Astrophysics Data System (ADS)

Liang, X. F.; Chen, Y.; Shi, L.; Lin, J.; Yin, J.; Liu, Z. G.

2007-08-01

A memory device has been fabricated using an AgI film sandwiched between a Pt film and an Ag film with the lateral size of the device scaled down to 300 nm. The AgI film was made by the iodination of the Ag film at room temperature and under ambient pressure. The switching between high- and low-resistance states can be realized by applying voltages of different polarities. The switching can be performed under the application of voltage pulses with a 100 Hz frequency for ~103 times. The switching times are in the order of microseconds and the retention time is about a week. The switching effects are explained as the electrochemical growth and dissolution of Ag in AgI.

Effects of AEA Cell-Bypass-Switch Closure on Charged EOS-Aqua NiH2 Cell

NASA Technical Reports Server (NTRS)

Keys, Denney; Rao, Gopalakrishna M.; Sullivan, David; Wannemacher, Harry

2001-01-01

The nominal performance of AEA CBPD under simulated EOS-Aqua/Aura flight hardware configuration has been demonstrated. There is no evidence of cell rupture or excessive heat production during or after CBPD switch activation under simulated high cell impedance (open-circuit cell failure mode). Inadvertent CBPD switch activation with a charged cell (low impedance path) intermittently closes and opens up the switch, therefore the device may or may not provide protection against future open-circuit cell failure. Further testing with switches F01 and F02 may provide clarification. The formation of a continuous low impedance path (a homogeneous low melting point alloy), has been confirmed - which is the expected mode of operation.

Pressure-induced switching in ferroelectrics: Phase-field modeling, electrochemistry, flexoelectric effect, and bulk vacancy dynamics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Ye; Morozovska, Anna; Kalinin, Sergei V.

Pressure-induced polarization switching in ferroelectric thin films has emerged as a powerful method for domain patterning, allowing us to create predefined domain patterns on free surfaces and under thin conductive top electrodes. However, the mechanisms for pressure-induced polarization switching in ferroelectrics remain highly controversial, with flexoelectricity, polarization rotation and suppression, and bulk and surface electrochemical processes all being potentially relevant. Here we classify possible pressure-induced switching mechanisms, perform elementary estimates, and study in depth using phase-field modeling. Finally, we show that magnitudes of these effects are remarkably close and give rise to complex switching diagrams as a function of pressuremore » and film thickness with nontrivial topology or switchable and nonswitchable regions.« less

Pressure-induced switching in ferroelectrics: Phase-field modeling, electrochemistry, flexoelectric effect, and bulk vacancy dynamics

DOE PAGES

Cao, Ye; Morozovska, Anna; Kalinin, Sergei V.

2017-11-01

Pressure-induced polarization switching in ferroelectric thin films has emerged as a powerful method for domain patterning, allowing us to create predefined domain patterns on free surfaces and under thin conductive top electrodes. However, the mechanisms for pressure-induced polarization switching in ferroelectrics remain highly controversial, with flexoelectricity, polarization rotation and suppression, and bulk and surface electrochemical processes all being potentially relevant. Here we classify possible pressure-induced switching mechanisms, perform elementary estimates, and study in depth using phase-field modeling. Finally, we show that magnitudes of these effects are remarkably close and give rise to complex switching diagrams as a function of pressuremore » and film thickness with nontrivial topology or switchable and nonswitchable regions.« less

On-Board Switching and Routing Advanced Technology Study

NASA Technical Reports Server (NTRS)

Yegenoglu, F.; Inukai, T.; Kaplan, T.; Redman, W.; Mitchell, C.

1998-01-01

Future satellite communications is expected to be fully integrated into National and Global Information Infrastructures (NII/GII). These infrastructures will carry multi gigabit-per-second data rates, with integral switching and routing of constituent data elements. The satellite portion of these infrastructures must, therefore, be more than pipes through the sky. The satellite portion will also be required to perform very high speed routing and switching of these data elements to enable efficient broad area coverage to many home and corporate users. The technology to achieve the on-board switching and routing must be selected and developed specifically for satellite application within the next few years. This report presents evaluation of potential technologies for on-board switching and routing applications.

Temperature induced complementary switching in titanium oxide resistive random access memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Panda, D., E-mail: dpanda@nist.edu; Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan; Simanjuntak, F. M.

2016-07-15

On the way towards high memory density and computer performance, a considerable development in energy efficiency represents the foremost aspiration in future information technology. Complementary resistive switch consists of two antiserial resistive switching memory (RRAM) elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption. Here we present a titanium oxide based complementary RRAM (CRRAM) device with Pt top and TiN bottom electrode. A subsequent post metal annealing at 400°C induces CRRAM. Forming voltage of 4.3 V is required for this device tomore » initiate switching process. The same device also exhibiting bipolar switching at lower compliance current, Ic <50 μA. The CRRAM device have high reliabilities. Formation of intermediate titanium oxi-nitride layer is confirmed from the cross-sectional HRTEM analysis. The origin of complementary switching mechanism have been discussed with AES, HRTEM analysis and schematic diagram. This paper provides valuable data along with analysis on the origin of CRRAM for the application in nanoscale devices.« less

Conflict monitoring and adjustment in the task-switching paradigm under different memory load conditions: an ERP/sLORETA analysis.

PubMed

Deng, Yuqin; Wang, Yan; Ding, Xiaoqian; Tang, Yi-Yuan

2015-02-11

The aim of the present study was to examine electrophysiological and behavioral changes caused by different memory loads in a task-switching paradigm. A total of 31 healthy individuals were subjected to a task, in which the stimulus-response reversal paradigm was combined with the task-switching paradigm. The event-related potentials were recorded and the N2 component, an index of conflict processing, was measured. In addition, the neural sources of N2 were further analyzed by standardized low-resolution brain electromagnetic tomography. The event-related potential results showed that high memory load triggered a higher N2 mean amplitude. Moreover, the standardized low-resolution brain electromagnetic tomography data showed that high memory load caused an increase in current densities at the anterior cingulate cortex and the prefrontal cortex in the task-switching paradigm. In summary, our findings provide electrophysiological evidence to interpret possible influences of memory loads on conflict monitoring and modulation during the task switching. These results imply that the working memory load overrules the influence of task-switching performance on the intensification of cognitive control.

A high-current rail-type gas switch with preionization by an additional corona discharge

NASA Astrophysics Data System (ADS)

Antipov, E. I.; Belozerov, O. S.; Krastelev, E. G.

2016-12-01

The characteristics of a high-current rail-type gas switch with preionization of the gas (air) in a spark gap by an additional corona discharge are investigated. The experiments were performed in a voltage range of 10-45 kV using a two-electrode switch consisting of two cylindrical electrodes with a diameter of 22 mm and a length of 100 mm and a set of laterally located corona-discharge needles. The requirements for the position and size of the needles are defined for which a corona discharge is ignited before a breakdown of the main gap and does not change to a sparking form, and the entire length of the rail electrodes is efficiently used. The fulfillment of these requirements ensures stable operation of the switch with a small variation of the pulse breakdown voltage, which is not more than 1% for a fixed voltage-pulse rise time in the range from 150 ns to 3.5 μs. A short delay time of the switch breakdown makes it possible to control the two-electrode switch by an overvoltage pulse of nanosecond duration.

TWC and AWG based optical switching structure for OVPN in WDM-PON

NASA Astrophysics Data System (ADS)

Bai, Hui-feng; Chen, Yu-xin; Wang, Qin

2015-03-01

With the rapid development of optical elements with large capacity and high speed, the network architecture is of great importance in determing the performance of wavelength division multiplexing passive optical network (WDM-PON). This paper proposes a switching structure based on the tunable wavelength converter (TWC) and the arrayed-waveguide grating (AWG) for WDM-PON, in order to provide the function of opitcal virtual private network (OVPN). Using the tunable wavelength converter technology, this switch structure is designed and works between the optical line terminal (OLT) and optical network units (ONUs) in the WDM-PON system. Moreover, the wavelength assignment of upstream/downstream can be realized and direct communication between ONUs is also allowed by privite wavelength channel. Simulation results show that the proposed TWC and AWG based switching structure is able to achieve OVPN function and to gain better performances in terms of bite error rate (BER) and time delay.

Software Defined Networking (SDN) controlled all optical switching networks with multi-dimensional switching architecture

NASA Astrophysics Data System (ADS)

Zhao, Yongli; Ji, Yuefeng; Zhang, Jie; Li, Hui; Xiong, Qianjin; Qiu, Shaofeng

2014-08-01

Ultrahigh throughout capacity requirement is challenging the current optical switching nodes with the fast development of data center networks. Pbit/s level all optical switching networks need to be deployed soon, which will cause the high complexity of node architecture. How to control the future network and node equipment together will become a new problem. An enhanced Software Defined Networking (eSDN) control architecture is proposed in the paper, which consists of Provider NOX (P-NOX) and Node NOX (N-NOX). With the cooperation of P-NOX and N-NOX, the flexible control of the entire network can be achieved. All optical switching network testbed has been experimentally demonstrated with efficient control of enhanced Software Defined Networking (eSDN). Pbit/s level all optical switching nodes in the testbed are implemented based on multi-dimensional switching architecture, i.e. multi-level and multi-planar. Due to the space and cost limitation, each optical switching node is only equipped with four input line boxes and four output line boxes respectively. Experimental results are given to verify the performance of our proposed control and switching architecture.

Six-port optical switch for cluster-mesh photonic network-on-chip

NASA Astrophysics Data System (ADS)

Jia, Hao; Zhou, Ting; Zhao, Yunchou; Xia, Yuhao; Dai, Jincheng; Zhang, Lei; Ding, Jianfeng; Fu, Xin; Yang, Lin

2018-05-01

Photonic network-on-chip for high-performance multi-core processors has attracted substantial interest in recent years as it offers a systematic method to meet the demand of large bandwidth, low latency and low power dissipation. In this paper we demonstrate a non-blocking six-port optical switch for cluster-mesh photonic network-on-chip. The architecture is constructed by substituting three optical switching units of typical Spanke-Benes network to optical waveguide crossings. Compared with Spanke-Benes network, the number of optical switching units is reduced by 20%, while the connectivity of routing path is maintained. By this way the footprint and power consumption can be reduced at the expense of sacrificing the network latency performance in some cases. The device is realized by 12 thermally tuned silicon Mach-Zehnder optical switching units. Its theoretical spectral responses are evaluated by establishing a numerical model. The experimental spectral responses are also characterized, which indicates that the optical signal-to-noise ratios of the optical switch are larger than 13.5 dB in the wavelength range from 1525 nm to 1565 nm. Data transmission experiment with the data rate of 32 Gbps is implemented for each optical link.

Hierarchically Self-Assembled Block Copolymer Blends for Templating Hollow Phase-Change Nanostructures with an Extremely Low Switching Current

DOE PAGES

Park, Woon Ik; Kim, Jong Min; Jeong, Jae Won; ...

2015-03-17

Phase change memory (PCM) is one of the most promising candidates for next-generation nonvolatile memory devices because of its high speed, excellent reliability, and outstanding scalability. But, the high switching current of PCM devices has been a critical hurdle to realize low-power operation. Although one solution is to reduce the switching volume of the memory, the resolution limit of photolithography hinders further miniaturization of device dimensions. Here, we employed unconventional self-assembly geometries obtained from blends of block copolymers (BCPs) to form ring-shaped hollow PCM nanostructures with an ultrasmall contact area between a phase-change material (Ge 2Sb 2Te 5) and amore » heater (TiN) electrode. The high-density (approximately 0.1 terabits per square inch) PCM nanoring arrays showed extremely small switching current of 2-3 mu A. Furthermore, the relatively small reset current of the ring-shaped PCM compared to the pillar-shaped devices is attributed to smaller switching volume, which is well supported by electro-thermal simulation results. Our approach may also be extended to other nonvolatile memory device applications such as resistive switching memory and magnetic storage devices, where the control of nanoscale geometry can significantly affect device performances.« less

High-Power X-Band Semiconductor RF Switch for Pulse Compression Systems of Future Colliders

NASA Astrophysics Data System (ADS)

Tantawi, Sami G.; Tamura, Fumihiko

2000-04-01

We describe the potential of semiconductor X-band RF switch arrays as a means of developing high power RF pulse compression systems for future linear colliders. The switch systems described here have two designs. Both designs consist of two 3dB hybrids and active modules. In the first design the module is composed of a cascaded active phase shifter. In the second design the module uses arrays of SPST (Single Pole Single Throw) switches. Each cascaded element of the phase shifter and the SPST switch has similar design. The active element consists of symmetrical three-port tee-junctions and an active waveguide window in the symmetrical arm of the tee-junction. The design methodology of the elements and the architecture of the whole switch system are presented. We describe the scaling law that governs the relation between power handling capability and number of elements. The design of the active waveguide window is presented. The waveguide window is a silicon wafer with an array of four hundred PIN/NIP diodes covering the surface of the window. This waveguide window is located in an over-moded TE01 circular waveguide. The results of high power RF measurements of the active waveguide window are presented. The experiment is performed at power levels of tens of megawatts at X-band.

Magnetic Material Assessment of a Novel Ultra-High Step-Up Converter with Single Semiconductor Switch and Galvanic Isolation for Fuel-Cell Power System.

PubMed

Shen, Chih-Lung; Liou, Heng

2017-11-15

In this paper, a novel step-up converter is proposed, which has the particular features of single semiconductor switch, ultra-high conversion ratio, galvanic isolation, and easy control. Therefore, the proposed converter is suitable for the applications of fuel-cell power system. Coupled inductors and switched capacitors are incorporated in the converter to obtain an ultra-high voltage ratio that is much higher than that of a conventional high step-up converter. Even if the turns ratio of coupled inductor and duty ratio are only to be 1 and 0.5, respectively, the converter can readily achieve a voltage gain of up to 18. Owing to this outstanding performance, it can also be applied to any other low voltage source for voltage boosting. In the power stage, only one active switch is used to handle the converter operation. In addition, the leakage energy of the two couple inductors can be totally recycled without any snubber, which simplifies the control mechanism and improves the conversion efficiency. Magnetic material dominates the conversion performance of the converter. Different types of iron cores are discussed for the possibility to serve as a coupled inductor. A 200 W prototype with 400 V output voltage is built to validate the proposed converter. In measurement, it indicates that the highest efficiency can be up to 94%.

Magnetic Material Assessment of a Novel Ultra-High Step-Up Converter with Single Semiconductor Switch and Galvanic Isolation for Fuel-Cell Power System

PubMed Central

Shen, Chih-Lung; Liou, Heng

2017-01-01

In this paper, a novel step-up converter is proposed, which has the particular features of single semiconductor switch, ultra-high conversion ratio, galvanic isolation, and easy control. Therefore, the proposed converter is suitable for the applications of fuel-cell power system. Coupled inductors and switched capacitors are incorporated in the converter to obtain an ultra-high voltage ratio that is much higher than that of a conventional high step-up converter. Even if the turns ratio of coupled inductor and duty ratio are only to be 1 and 0.5, respectively, the converter can readily achieve a voltage gain of up to 18. Owing to this outstanding performance, it can also be applied to any other low voltage source for voltage boosting. In the power stage, only one active switch is used to handle the converter operation. In addition, the leakage energy of the two couple inductors can be totally recycled without any snubber, which simplifies the control mechanism and improves the conversion efficiency. Magnetic material dominates the conversion performance of the converter. Different types of iron cores are discussed for the possibility to serve as a coupled inductor. A 200 W prototype with 400 V output voltage is built to validate the proposed converter. In measurement, it indicates that the highest efficiency can be up to 94%. PMID:29140282

Interplay between ferroelectric and resistive switching in doped crystalline HfO2

NASA Astrophysics Data System (ADS)

Max, Benjamin; Pešić, Milan; Slesazeck, Stefan; Mikolajick, Thomas

2018-04-01

Hafnium oxide is widely used for resistive switching devices, and recently it has been discovered that ferroelectricity can be established in (un-)doped hafnium oxide as well. Previous studies showed that both switching mechanisms are influenced by oxygen vacancies. For resistive switching, typically amorphous oxide layers with an asymmetric electrode configuration are used to create a gradient of oxygen vacancies. On the other hand, ferroelectric switching is performed by having symmetric electrodes and requires crystalline structures. The coexistence of both effects has recently been demonstrated. In this work, a detailed analysis of the reversible interplay of both switching mechanisms within a single capacitor cell is investigated. First, ferroelectric switching cycles were applied in order to drive the sample into the fatigued stage characterized by increased concentration of oxygen vacancies in the oxide layer. Afterwards, a forming step that is typical for the resistive switching devices was utilized to achieve a soft breakdown. In the next step, twofold alternation between the high and low resistance state is applied to demonstrate the resistive switching behavior of the device. Having the sample in the high resistance state with a ruptured filament, ferroelectric switching behavior is again shown within the same stack. Interestingly, the same endurance as before was observed without a hard breakdown of the device. Therefore, an effective sequence of ferroelectric—resistive—ferroelectric switching is realized. Additionally, the dependence of the forming, set, and reset voltage on the ferroelectric cycling stage (pristine, woken-up and fatigued) is analyzed giving insight into the physical device operation.

High power ferrite microwave switch

NASA Technical Reports Server (NTRS)

Bardash, I.; Roschak, N. K.

1975-01-01

A high power ferrite microwave switch was developed along with associated electronic driver circuits for operation in a spaceborne high power microwave transmitter in geostationary orbit. Three units were built and tested in a space environment to demonstrate conformance to the required performance characteristics. Each unit consisted of an input magic-tee hybrid, two non-reciprocal latching ferrite phase shifters, an out short-slot 3 db quadrature coupler, a dual driver electronic circuit, and input logic interface circuitry. The basic mode of operation of the high power ferrite microwave switch is identical to that of a four-port, differential phase shift, switchable circulator. By appropriately designing the phase shifters and electronic driver circuits to operate in the flux-transfer magnetization mode, power and temperature insensitive operation was achieved. A list of the realized characteristics of the developed units is given.

Optically-Switched Resonant Tunneling Diodes for Space-Based Optical Communication Applications

NASA Technical Reports Server (NTRS)

Moise, T. S.; Kao, Y. -C.; Jovanovic, D.; Sotirelis, P.

1995-01-01

We are developing a new type of digital photo-receiver that has the potential to perform high speed optical-to-electronic conversion with a factor of 10 reduction in component count and power dissipation. In this paper, we describe the room-temperature photo-induced switching of this InP-based device which consists of an InGaAs/AlAs resonant tunneling diode integrated with an InGaAs absorber layer. When illuminated at an irradiance of greater than 5 Wcm(exp -2) using 1.3 micromillimeter radiation, the resonant tunneling diode switches from a high-conductance to a low-conductance electrical state and exhibits a voltage swing of up to 800 mV.

Call for Papers: Photonics in Switching

NASA Astrophysics Data System (ADS)

Wosinska, Lena; Glick, Madeleine

2006-04-01

Call for Papers: Photonics in Switching

Guest Editors:

Lena Wosinska, Royal Institute of Technology (KTH) / ICT Sweden Madeleine Glick, Intel Research, Cambridge, UK

Scope of Submission

• WDM node architectures
• Novel device technologies enabling photonics in switching, such as optical switch fabrics, optical memory, and wavelength conversion
• Routing protocols
• WDM switching and routing
• Quality of service
• Performance measurement and evaluation
• Next-generation optical networks: architecture, signaling, and control
• Traffic measurement and field trials
• Optical burst and packet switching
• OBS/OPS node architectures
• Burst/Packet scheduling and routing algorithms
• Contention resolution/avoidance strategies
• Services and applications for OBS/OPS (e.g., grid networks, storage-area networks, etc.)
• Burst assembly and ingress traffic shaping
• Hybrid OBS/TDM or OBS/wavelength routing

Manuscript Submission

Ion-Transport Design for High-Performance Na+-Based Electrochromics.

PubMed

Li, Ran; Li, Kerui; Wang, Gang; Li, Lei; Zhang, Qiangqiang; Yan, Jinhui; Chen, Yao; Zhang, Qinghong; Hou, Chengyi; Li, Yaogang; Wang, Hongzhi

2018-04-24

Sodium ion (Na + )-based electrochemical systems have been extensively investigated in batteries and supercapacitors and also can be quality candidates for electrochromic (EC) devices. However, poor diffusion kinetics and severe EC performance degradation occur during the intercalation/deintercalation processes because the ionic radii of Na + are larger than those of conventional intercalation ions. Here, through intentional design of ion-transport channels in metal-organic frameworks (MOFs), Na + serves as an efficient intercalation ion for incorporation into a nanostructured electrode with a high diffusion coefficient of approximately 10 -8 cm 2 s -1 . As a result, the well-designed MOF-based EC device demonstrates desirable Na + EC performance, including fast switching speed, multicolor switching, and high stability. A smart "quick response code" display is fabricated using a mask-free laser writing method for application in the "Internet of Things". In addition, the concept of ion transport pathway design can be widely adopted for fabricating high-performance ion intercalation materials and devices for consumer electronics.

Improved switching reliability achieved in HfOx based RRAM with mountain-like surface-graphited carbon layer

NASA Astrophysics Data System (ADS)

Tao, Ye; Ding, Wentao; Wang, Zhongqiang; Xu, Haiyang; Zhao, Xiaoning; Li, Xuhong; Liu, Weizhen; Ma, Jiangang; Liu, Yichun

2018-05-01

In this work, we demonstrated an effective method to improve the switching reliability of HfOx based RRAM device by inserting mountain-like surface-graphited carbon (MSGC) layer. The MSGC layer was fabricated through thermal annealing of amorphous carbon (a-C) film with high sp2 proportion (49.7%) under 500 °C on Pt substrate, whose characteristics were validated by XPS and Raman spectrums. The local electric-field (LEF) was enhanced around the nanoscale tips of MSGC layer due to large surface curvature, which leads to simplified CFs and localization of resistive switching region. It takes responsibility to the reduction of high/low resistance states (HRS/LRS) fluctuation from 173.8%/64.9% to 23.6%/6.5%, respectively. In addition, the resulting RRAM devices exhibited fast switching speed (<65 ns), good retention (>104 s at 85 °C) and low cycling degradation. This method could be promising to develop reliable and repeatable high-performance RRAM for practical applications.

Design and analysis of compact MMIC switches utilising GaAs pHEMTs in 3D multilayer technology

NASA Astrophysics Data System (ADS)

Haris, Norshakila; Kyabaggu, Peter B. K.; Alim, Mohammad A.; Rezazadeh, Ali A.

2017-05-01

In this paper, we demonstrate for the first time the implementation of three-dimensional multilayer technology on GaAs-based pseudomorphic high electron mobility transistor (pHEMT) switches. Two types of pHEMT switches are considered, namely single-pole single-throw (SPST) and single-pole double-throw (SPDT). The design and analysis of the devices are demonstrated first through a simulation of the industry-recognised standard model, TriQuint’s Own Model—Level 3, developed by TriQuint Semiconductor, Inc. From the simulation analysis, three optimised SPST and SPDT pHEMT switches which can address applications ranging from L to X bands, are fabricated and tested. The performance of the pHEMT switches using multilayer technology are comparable to those of the current state-of-the-art pHEMT switches, while simultaneously offering compact circuits with the advantages of integration with other MMIC components.

Can task-switching training enhance executive control functioning in children with attention deficit/-hyperactivity disorder?

PubMed

Kray, Jutta; Karbach, Julia; Haenig, Susann; Freitag, Christine

2011-01-01

The key cognitive impairments of children with attention deficit/-hyperactivity disorder (ADHD) include executive control functions such as inhibitory control, task-switching, and working memory (WM). In this training study we examined whether task-switching training leads to improvements in these functions. Twenty children with combined type ADHD and stable methylphenidate medication performed a single-task and a task-switching training in a crossover training design. The children were randomly assigned to one of two groups. One group started with the single-task training and then performed the task-switching training and the other group vice versa. The effectiveness of the task-switching training was measured as performance improvements (relative to the single-task training) on a structurally similar but new switching task and on other executive control tasks measuring inhibitory control and verbal WM as well as on fluid intelligence (reasoning). The children in both groups showed improvements in task-switching, that is, a reduction of switching costs, but not in performing the single-tasks across four training sessions. Moreover, the task-switching training lead to selective enhancements in task-switching performance, that is, the reduction of task-switching costs was found to be larger after task-switching than after single-task training. Similar selective improvements were observed for inhibitory control and verbal WM, but not for reasoning. Results of this study suggest that task-switching training is an effective cognitive intervention that helps to enhance executive control functioning in children with ADHD.

Can Task-Switching Training Enhance Executive Control Functioning in Children with Attention Deficit/-Hyperactivity Disorder?

PubMed Central

Kray, Jutta; Karbach, Julia; Haenig, Susann; Freitag, Christine

2012-01-01

The key cognitive impairments of children with attention deficit/-hyperactivity disorder (ADHD) include executive control functions such as inhibitory control, task-switching, and working memory (WM). In this training study we examined whether task-switching training leads to improvements in these functions. Twenty children with combined type ADHD and stable methylphenidate medication performed a single-task and a task-switching training in a crossover training design. The children were randomly assigned to one of two groups. One group started with the single-task training and then performed the task-switching training and the other group vice versa. The effectiveness of the task-switching training was measured as performance improvements (relative to the single-task training) on a structurally similar but new switching task and on other executive control tasks measuring inhibitory control and verbal WM as well as on fluid intelligence (reasoning). The children in both groups showed improvements in task-switching, that is, a reduction of switching costs, but not in performing the single-tasks across four training sessions. Moreover, the task-switching training lead to selective enhancements in task-switching performance, that is, the reduction of task-switching costs was found to be larger after task-switching than after single-task training. Similar selective improvements were observed for inhibitory control and verbal WM, but not for reasoning. Results of this study suggest that task-switching training is an effective cognitive intervention that helps to enhance executive control functioning in children with ADHD. PMID:22291628

Determination of 3-hydroxypropylmercapturic acid in urine by three column-switching high-performance liquid chromatography with electrochemical detection using a diamond electrode.

PubMed

Higashi, Kyohei; Shibasaki, Mana; Kuni, Kyoshiro; Uemura, Takeshi; Waragai, Masaaki; Uemura, Kenichi; Igarashi, Kazuei; Toida, Toshihiko

2017-09-29

A three column-switching high-performance liquid chromatography (HPLC) using an electrochemical detector (ECD) equipped with a diamond electrode was established to determine 3-hydroxypropylmercapturic acid (3-HPMA) in urine. An extracted urine sample was consecutively fractionated using a strong anion-exchange column (first column) and a C8 column (second column) via a switching valve before application on an Octa Decyl Silyl (ODS) column (third column), followed by ECD analysis. The% recovery of 3-HPMA standard throughout the three-column process and limit of detection (LOD) were 94±1% and 0.1pmol, respectively. A solid phase extraction step is required for the sensitive analysis of 3-HPMA in urine by column-switching HPLC-ECD despite a decreased% recovery (55%) of urine sample spiked with 100pmol of 3-HPMA. To test the utility of our column-switching HPLC-ECD method, 3-HPMA levels of 27 urine samples were determined, and the correlation between HPLC-ECD and LC-Electrospray ionization (ESI)-MS/MS method was examined. As a result, the median values of μmol 3-HPMA/g Creatinine (Cre) in urine obtained by column-switching HPLC-ECD and LC-MS/MS were 2.19±2.12μmol/g Cre and 2.13±3.38μmol/g Cre, respectively, and the calibration curve (y=1.5171x-1.007) exhibited good linearity within a defined range (r 2 =0.907). These results indicate that the combination of column-switching HPLC and ECD is a powerful tool for the specific, reliable detection of 3-HPMA in urine. Copyright © 2017 Elsevier B.V. All rights reserved.

The development of high-voltage repetitive low-jitter corona stabilized triggered switch

NASA Astrophysics Data System (ADS)

Geng, Jiuyuan; Yang, Jianhua; Cheng, Xinbing; Yang, Xiao; Chen, Rong

2018-04-01

The high-power switch plays an important part in a pulse power system. With the trend of pulse power technology toward modularization, miniaturization, and accuracy control, higher requirements on electrical trigger and jitter of the switch have been put forward. A high-power low-jitter corona-stabilized triggered switch (CSTS) is designed in this paper. This kind of CSTS is based on corona stabilized mechanism, and it can be used as a main switch of an intense electron-beam accelerator (IEBA). Its main feature was the use of an annular trigger electrode instead of a traditional needle-like trigger electrode, taking main and side trigger rings to fix the discharging channels and using SF6/N2 gas mixture as its operation gas. In this paper, the strength of the local field enhancement was changed by a trigger electrode protrusion length Dp. The differences of self-breakdown voltage and its stability, delay time jitter, trigger requirements, and operation range of the switch were compared. Then the effect of different SF6/N2 mixture ratio on switch performance was explored. The experimental results show that when the SF6 is 15% with the pressure of 0.2 MPa, the hold-off voltage of the switch is 551 kV, the operating range is 46.4%-93.5% of the self-breakdown voltage, the jitter is 0.57 ns, and the minimum trigger voltage requirement is 55.8% of the peak. At present, the CSTS has been successfully applied to an IEBA for long time operation.

The development of high-voltage repetitive low-jitter corona stabilized triggered switch.

PubMed

Geng, Jiuyuan; Yang, Jianhua; Cheng, Xinbing; Yang, Xiao; Chen, Rong

2018-04-01

The high-power switch plays an important part in a pulse power system. With the trend of pulse power technology toward modularization, miniaturization, and accuracy control, higher requirements on electrical trigger and jitter of the switch have been put forward. A high-power low-jitter corona-stabilized triggered switch (CSTS) is designed in this paper. This kind of CSTS is based on corona stabilized mechanism, and it can be used as a main switch of an intense electron-beam accelerator (IEBA). Its main feature was the use of an annular trigger electrode instead of a traditional needle-like trigger electrode, taking main and side trigger rings to fix the discharging channels and using SF 6 /N 2 gas mixture as its operation gas. In this paper, the strength of the local field enhancement was changed by a trigger electrode protrusion length Dp. The differences of self-breakdown voltage and its stability, delay time jitter, trigger requirements, and operation range of the switch were compared. Then the effect of different SF 6 /N 2 mixture ratio on switch performance was explored. The experimental results show that when the SF 6 is 15% with the pressure of 0.2 MPa, the hold-off voltage of the switch is 551 kV, the operating range is 46.4%-93.5% of the self-breakdown voltage, the jitter is 0.57 ns, and the minimum trigger voltage requirement is 55.8% of the peak. At present, the CSTS has been successfully applied to an IEBA for long time operation.

Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate Switching Time Analysis

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; Macleod, Todd C.; Ho, Fat D.

2006-01-01

Previous research investigated the modeling of a N Wga te constructed of Metal-Ferroelectric- Semiconductor Field-Effect Transistors (MFSFETs) to obtain voltage transfer curves. The NAND gate was modeled using n-channel MFSFETs with positive polarization for the standard CMOS n-channel transistors and n-channel MFSFETs with negative polarization for the standard CMOS p-channel transistors. This paper investigates the MFSFET NAND gate switching time propagation delay, which is one of the other important parameters required to characterize the performance of a logic gate. Initially, the switching time of an inverter circuit was analyzed. The low-to-high and high-to-low propagation time delays were calculated. During the low-to-high transition, the negatively polarized transistor pulls up the output voltage, and during the high-to-low transition, the positively polarized transistor pulls down the output voltage. The MFSFETs were simulated by using a previously developed model which utilized a partitioned ferroelectric layer. Then the switching time of a 2-input NAND gate was analyzed similarly to the inverter gate. Extension of this technique to more complicated logic gates using MFSFETs will be studied.

Applications of High Speed Networks

DTIC Science & Technology

1991-09-01

plished in order to achieve a dpgree of parallelism by constructing a distributed switch. The type of switch, self -routing, processes the packet...control more than a dozen missiles in flight, and the four Mark 99 target illuminators direct missiles in the terminal phase. The self -contained Phalanx...military installations, weapon system respose and expected missile performance against a threat. Projects are already underway transposing of

Stimulus-level interference disrupts repetition benefit during task switching in middle childhood

PubMed Central

Karayanidis, Frini; Jamadar, Sharna; Sanday, Dearne

2013-01-01

The task-switching paradigm provides a powerful tool to measure the development of core cognitive control processes. In this study, we use the alternating runs task-switching paradigm to assess preparatory control processes involved in flexibly preparing for a predictable change in task and stimulus-driven control processes involved in controlling stimulus-level interference. We present three experiments that examine behavioral and event-related potential (ERP) measures of task-switching performance in middle childhood and young adulthood under low and high stimulus interference conditions. Experiment 1 confirms that our new child-friendly tasks produce similar behavioral and electrophysiological findings in young adults as those previously reported. Experiment 2 examines task switching with univalent stimuli across a range of preparation intervals in middle childhood. Experiment 3 compares task switching with bivalent stimuli across the same preparation intervals in children and young adults. Children produced a larger RT switch cost than adults with univalent stimuli and a short preparation interval. Both children and adults showed significant reduction in switch cost with increasing preparation interval, but in children this was caused by greater increase in RT for repeat than switch trials. Response-locked ERPs showed intact preparation for univalent, but less efficient preparation for bivalent stimulus conditions. Stimulus-locked ERPs confirmed that children showed greater stimulus-level interference for repeat trials, especially with bivalent stimuli. We conclude that children show greater stimulus-level interference especially for repeat trials under high interference conditions, suggesting weaker mental representation of the current task set. PMID:24367317

The Selection of Q-Switch for a 350mJ Air-borne 2-micron Wind Lidar

NASA Technical Reports Server (NTRS)

Petros, Mulugeta; Yu, Jirong; Trieu, Bo; Bai, Yingxin; Petzar, Paul; Singh, Upendra N.

2008-01-01

In the process of designing a coherent, high energy 2micron, Doppler wind Lidar, various types of Q-Switch materials and configurations have been investigated for the oscillator. Designing an oscillator with a relatively low gain laser material, presents challenges related to the management high internal circulating fluence due to high reflective output coupler. This problem is compounded by the loss of hold-off. In addition, the selection has to take into account the round trip optical loss in the resonator and the loss of hold-off. For this application, a Brewster cut 5mm aperture, fused silica AO Q-switch is selected. Once the Q-switch is selected various rf frequencies were evaluated. Since the Lidar has to perform in single longitudinal and transverse mode with transform limited line width, in this paper, various seeding configurations are presented in the context of Q-Switch diffraction efficiency. The master oscillator power amplifier has demonstrated over 350mJ output when the amplifier is operated in double pass mode and higher than 250mJ when operated in single pass configuration. The repetition rate of the system is 10Hz and the pulse length 200ns.

High-performance hybrid complementary logic inverter through monolithic integration of a MEMS switch and an oxide TFT.

PubMed

Song, Yong-Ha; Ahn, Sang-Joon Kenny; Kim, Min-Wu; Lee, Jeong-Oen; Hwang, Chi-Sun; Pi, Jae-Eun; Ko, Seung-Deok; Choi, Kwang-Wook; Park, Sang-Hee Ko; Yoon, Jun-Bo

2015-03-25

A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A high-current rail-type gas switch with preionization by an additional corona discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antipov, E. I.; Belozerov, O. S.; Krastelev, E. G., E-mail: ekrastelev@yandex.ru

The characteristics of a high-current rail-type gas switch with preionization of the gas (air) in a spark gap by an additional corona discharge are investigated. The experiments were performed in a voltage range of 10–45 kV using a two-electrode switch consisting of two cylindrical electrodes with a diameter of 22 mm and a length of 100 mm and a set of laterally located corona-discharge needles. The requirements for the position and size of the needles are defined for which a corona discharge is ignited before a breakdown of the main gap and does not change to a sparking form, andmore » the entire length of the rail electrodes is efficiently used. The fulfillment of these requirements ensures stable operation of the switch with a small variation of the pulse breakdown voltage, which is not more than 1% for a fixed voltage-pulse rise time in the range from 150 ns to 3.5 μs. A short delay time of the switch breakdown makes it possible to control the two-electrode switch by an overvoltage pulse of nanosecond duration.« less

High Performance ZVT with Bus Clamping Modulation Technique for Single Phase Full Bridge Inverters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xia, Yinglai; Ayyanar, Raja

2016-03-20

This paper proposes a topology based on bus clamping modulation and zero-voltage-transition (ZVT) technique to realize zero-voltage-switching (ZVS) for all the main switches of the full bridge inverters, and inherent ZVS and/or ZCS for the auxiliary switches. The advantages of the strategy include significant reduction in the turn-on loss of the ZVT auxiliary switches which typically account for a major part of the total loss in other ZVT circuits, and reduction in the voltage ratings of auxiliary switches. The modulation scheme and the commutation stages are analyzed in detail. Finally, a 1kW, 500 kHz switching frequency inverter of the proposedmore » topology using SiC MOSFETs has been built to validate the theoretical analysis. The ZVT with bus clamping modulation technique of fixed timing and adaptive timing schemes are implemented in DSP TMS320F28335 resulting in full ZVS for the main switches in the full bridge inverter. The proposed scheme can save up to 33 % of the switching loss compared with no ZVT case.« less

Effects of automation and task load on task switching during human supervision of multiple semi-autonomous robots in a dynamic environment.

PubMed

Squire, P N; Parasuraman, R

2010-08-01

The present study assessed the impact of task load and level of automation (LOA) on task switching in participants supervising a team of four or eight semi-autonomous robots in a simulated 'capture the flag' game. Participants were faster to perform the same task than when they chose to switch between different task actions. They also took longer to switch between different tasks when supervising the robots at a high compared to a low LOA. Task load, as manipulated by the number of robots to be supervised, did not influence switch costs. The results suggest that the design of future unmanned vehicle (UV) systems should take into account not simply how many UVs an operator can supervise, but also the impact of LOA and task operations on task switching during supervision of multiple UVs. The findings of this study are relevant for the ergonomics practice of UV systems. This research extends the cognitive theory of task switching to inform the design of UV systems and results show that switching between UVs is an important factor to consider.

Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system

NASA Astrophysics Data System (ADS)

Mun, Jae-Kyoung; Oh, Jung-Hun; Sung, Ho-Kun; Wang, Cong

2015-12-01

The effects of the doping concentration ratios between upper and lower silicon planar-doping layers on the DC and RF characteristics of the double planar doped pseudomorphic high electron mobility transistors (pHEMTs) are investigated. From the device simulation, an increase of maximum extrinsic transconductance and a decrease of total on- and off-state capacitances are observed, as well as an increase of the upper to lower planar-doping concentration ratios (UTLPDR), which give rise to an enhancement of the switching speed and isolation characteristics. On the basis of simulation results, two types of pHEMTs are fabricated with two different UTLPDRs of 4:1 and 1:2. After applying these two types' pHEMTs, single-pole-double-throw (SPDT) transmitter/receiver monolithic microwave integrated circuit (MMIC) switches are also designed and fabricated. The SPDT MMIC switch with a 4:1 UTLPDR shows an insertion loss of 0.58 dB, isolation of 40.2 dB, and switching speed of 100 ns, respectively, which correspondingly indicate a 0.23 dB lower insertion loss, 2.90 dB higher isolation and 2.5 times faster switching speed than those of 1:2 UTLPDR at frequency range of 2-6 GHz. From the simulation results and comparative studies, we propose that the UTLPDR must be greater than 4:1 for the best switching performance. With the abovementioned excellent performances, the proposed switch would be quite promising in the application of information and communications technology system.

Comparative study of electrical and switch-skipping mechanical switch for self-powered SSHI in medium coupled piezoelectric vibration energy harvesters

NASA Astrophysics Data System (ADS)

Asanuma, H.; Sakamoto, K.; Komatsuzaki, T.; Iwata, Y.

2018-07-01

To increase output power for piezoelectric vibration energy harvesters, considerable attention has recently been focused on a self-powered synchronized switch harvesting on inductor (SSHI) technique employing an electrical and mechanical switch. However, there are two technical issues: in a medium or highly coupled harvester, the piezoelectric coupling force, which increases as the SSHI’s voltage increases, will reduce the harvester’s displacement and the resulting output power, and there are few reports comparing the performance of electrical switch SSHI (ESS) and mechanical switch SSHI (MSS) that include consideration of the piezoelectric coupling force. We developed a simulation technique that allows us to evaluate the output power considering the piezoelectric coupling force, and investigated the performance of stopper-based MSS and ESS, both numerically and experimentally. The numerical investigation predicted the following: (1) the output power for the ESS is lower than that for the MSS at acceleration lower than 3.5 m s‑2 and (2) intriguingly, the output power for the MSS continues to increase, whereas the peak–peak displacement remains constant. The experimental results showed behaviour similar to that of the numerical predictions. The results are attributed to the different switching strategies: the MSS turns on only when the harvester’s displacement exceeds the gap distance, while the ESS turns on at every maximum/minimum displacement.

GaN transistors on Si for switching and high-frequency applications

NASA Astrophysics Data System (ADS)

Ueda, Tetsuzo; Ishida, Masahiro; Tanaka, Tsuyoshi; Ueda, Daisuke

2014-10-01

In this paper, recent advances of GaN transistors on Si for switching and high-frequency applications are reviewed. Novel epitaxial structures including superlattice interlayers grown by metal organic chemical vapor deposition (MOCVD) relieve the strain and eliminate the cracks in the GaN over large-diameter Si substrates up to 8 in. As a new device structure for high-power switching application, Gate Injection Transistors (GITs) with a p-AlGaN gate over an AlGaN/GaN heterostructure successfully achieve normally-off operations maintaining high drain currents and low on-state resistances. Note that the GITs on Si are free from current collapse up to 600 V, by which the drain current would be markedly reduced after the application of high drain voltages. Highly efficient operations of an inverter and DC-DC converters are presented as promising applications of GITs for power switching. The high efficiencies in an inverter, a resonant LLC converter, and a point-of-load (POL) converter demonstrate the superior potential of the GaN transistors on Si. As for high-frequency transistors, AlGaN/GaN heterojuction field-effect transistors (HFETs) on Si designed specifically for microwave and millimeter-wave frequencies demonstrate a sufficiently high output power at these frequencies. Output powers of 203 W at 2.5 GHz and 10.7 W at 26.5 GHz are achieved by the fabricated GaN transistors. These devices for switching and high-frequency applications are very promising as future energy-efficient electronics because of their inherent low fabrication cost and superior device performance.

Nano- and micro-electromechanical switch dynamics

NASA Astrophysics Data System (ADS)

Pulskamp, Jeffrey S.; Proie, Robert M.; Polcawich, Ronald G.

2013-01-01

This paper reports theoretical analysis and experimental results on the dynamics of piezoelectric MEMS mechanical logic relays. The multiple degree of freedom analytical model, based on modal decomposition, utilizes modal parameters obtained from finite element analysis and an analytical model of piezoelectric actuation. The model accounts for exact device geometry, damping, drive waveform variables, and high electric field piezoelectric nonlinearity. The piezoelectrically excited modal force is calculated directly and provides insight into design optimization for switching speed. The model accurately predicts the propagation delay dependence on actuation voltage of mechanically distinct relay designs. The model explains the observed discrepancies in switching speed of these devices relative to single degree of freedom switching speed models and suggests the strong potential for improved switching speed performance in relays designed for mechanical logic and RF circuits through the exploitation of higher order vibrational modes.

Enhanced Thermo-Optical Switching of Paraffin-Wax Composite Spots under Laser Heating

PubMed Central

Said, Asmaa; Salah, Abeer; Abdel Fattah, Gamal

2017-01-01

Thermo-optical switches are of particular significance in communications networks where increasingly high switching speeds are required. Phase change materials (PCMs), in particular those based on paraffin wax, provide wealth of exciting applications with unusual thermally-induced switching properties, only limited by paraffin’s rather low thermal conductivity. In this paper, the use of different carbon fillers as thermal conductivity enhancers for paraffin has been investigated, and a novel structure based on spot of paraffin wax as a thermo-optic switch is presented. Thermo-optical switching parameters are enhanced with the addition of graphite and graphene, due to the extreme thermal conductivity of the carbon fillers. Differential Scanning Calorimetry (DSC) and Scanning electron microscope (SEM) are performed on paraffin wax composites, and specific heat capacities are calculated based on DSC measurements. Thermo-optical switching based on transmission is measured as a function of the host concentration under conventional electric heating and laser heating of paraffin-carbon fillers composites. Further enhancements in thermo-optical switching parameters are studied under Nd:YAG laser heating. This novel structure can be used in future networks with huge bandwidth requirements and electric noise free remote aerial laser switching applications. PMID:28772884

Enhanced Thermo-Optical Switching of Paraffin-Wax Composite Spots under Laser Heating.

PubMed

Said, Asmaa; Salah, Abeer; Fattah, Gamal Abdel

2017-05-12

Thermo-optical switches are of particular significance in communications networks where increasingly high switching speeds are required. Phase change materials (PCMs), in particular those based on paraffin wax, provide wealth of exciting applications with unusual thermally-induced switching properties, only limited by paraffin's rather low thermal conductivity. In this paper, the use of different carbon fillers as thermal conductivity enhancers for paraffin has been investigated, and a novel structure based on spot of paraffin wax as a thermo-optic switch is presented. Thermo-optical switching parameters are enhanced with the addition of graphite and graphene, due to the extreme thermal conductivity of the carbon fillers. Differential Scanning Calorimetry (DSC) and Scanning electron microscope (SEM) are performed on paraffin wax composites, and specific heat capacities are calculated based on DSC measurements. Thermo-optical switching based on transmission is measured as a function of the host concentration under conventional electric heating and laser heating of paraffin-carbon fillers composites. Further enhancements in thermo-optical switching parameters are studied under Nd:YAG laser heating. This novel structure can be used in future networks with huge bandwidth requirements and electric noise free remote aerial laser switching applications.

Improved Transient and Steady-State Performances of Series Resonant ZCS High-Frequency Inverter-Coupled Voltage Multiplier Converter with Dual Mode PFM Control Scheme

NASA Astrophysics Data System (ADS)

Chu, Enhui; Gamage, Laknath; Ishitobi, Manabu; Hiraki, Eiji; Nakaoka, Mutsuo

The A variety of switched-mode high voltage DC power supplies using voltage-fed type or current-fed type high-frequency transformer resonant inverters using MOS gate bipolar power transistors; IGBTs have been recently developed so far for a medical-use X-ray high power generator. In general, the high voltage high power X-ray generator using voltage-fed high frequency inverter with a high voltage transformer link has to meet some performances such as (i) short rising period in start transient of X-ray tube voltage (ii) no overshoot transient response in tube voltage, (iii) minimized voltage ripple in periodic steady-state under extremely wide load variations and filament heater current fluctuation conditions of the X-ray tube. This paper presents two lossless inductor snubber-assisted series resonant zero current soft switching high-frequency inverter using a diode-capacitor ladder type voltage multiplier called Cockcroft-Walton circuit, which is effectively implemented for a high DC voltage X-ray power generator. This DC high voltage generator which incorporates pulse frequency modulated series resonant inverter using IGBT power module packages is based on the operation principle of zero current soft switching commutation scheme under discontinuous resonant current and continuous resonant current transition modes. This series capacitor compensated for transformer resonant power converter with a high frequency transformer linked voltage boost multiplier can efficiently work a novel selectively-changed dual mode PFM control scheme in order to improve the start transient and steady-state response characteristics and can completely achieve stable zero current soft switching commutation tube filament current dependent for wide load parameter setting values with the aid of two lossless inductor snubbers. It is proved on the basis of simulation and experimental results in which a simple and low cost control implementation based on selectively-changed dual-mode PFM for high-voltage X-ray DC-DC power converter with a voltage multiplier strategy has some specified voltage pattern tracking voltage response performances under rapid rising time and no overshoot in start transient tube voltage as well as the minimized steady-state voltage ripple in tube voltage.

mpiGraph

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moody, Adam

2007-05-22

MpiGraph consists of an MPI application called mpiGraph written in C to measure message bandwidth and an associated crunch_mpiGraph script written in Perl to process the application output into an HTMO report. The mpiGraph application is designed to inspect the health and scalability of a high-performance interconnect while under heavy load. This is useful to detect hardware and software problems in a system, such as slow nodes, links, switches, or contention in switch routing. It is also useful to characterize how interconnect performance changes with different settings or how one interconnect type compares to another.

A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure

NASA Astrophysics Data System (ADS)

Tsai, Tsung-Ling; Chang, Hsiang-Yu; Lou, Jesse Jen-Chung; Tseng, Tseung-Yuen

2016-04-01

In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO2)/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO2/ITO single layer device, the ITO/ZrO2/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by forming an asymmetrical conductive filament with the weakest part at the ZrO2/AlON interface. Therefore, in the ITO/ZrO2/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.

Determination of N-(trans-4-isopropylcyclohexanecarbonyl)-D-phenylalanine and its metabolites in human plasma and urine by column-switching high-performance liquid chromatography with ultraviolet detection.

PubMed

Ono, I; Matsuda, K; Kanno, S

1997-05-09

A simple, rapid and sensitive two column-switching high-performance liquid chromatographic (HPLC) method with ultraviolet detection at 210 nm has been developed for the determination of N-(trans-4-isopropylcyclohexanecarbonyl)-D-phenylalanine (AY4166, I) and its seven metabolites in human plasma and urine. Measurements of I and its metabolites were carried out by two column-switching HPLC, because metabolites were classified into two groups according to their retention times. After purification of plasma samples using solid-phase extraction and direct dilution of urinary samples, I and each metabolite were injected into HPLC. The calibration graphs for plasma and urinary samples were linear in the ranges 0.1 to 10 microg ml(-1) and 0.5 to 50 microg ml(-1), respectively. Recoveries of I and its seven metabolites were over 88% by the standard addition method and the relative standard deviations of I and its metabolites were 1-6%.

Investigating the relationship between media multitasking and processes involved in task-switching.

PubMed

Alzahabi, Reem; Becker, Mark W; Hambrick, David Z

2017-11-01

Although multitasking with media has increased dramatically in recent years (Rideout, Foehr, & Roberts, 2010), the association between media multitasking and cognitive performance is poorly understood. In addition, the literature on the relationship between media multitasking and task-switching, one measure of cognitive control, has produced mixed results (Alzahabi & Becker, 2013; Minear et al., 2013; Ophir, Nass, & Wagner, 2009). Here we use an individual differences approach to investigate the relationship between media multitasking and task-switching performance by first examining the structure of task-switching and identifying the latent factors that contribute to switch costs. Participants performed a series of 3 different task-switching paradigms, each designed to isolate the effects of a specific putative mechanism (e.g., advanced preparation) related to task-switching performance, as well as a series of surveys to measure media multitasking and intelligence. The results suggest that task-switching performance is related to 2 somewhat independent factors, namely an advanced preparation factor and passive decay factor. In addition, multitasking with media was related to a faster ability to prepare for tasks, resulting in faster task-switching performance without a cost to accuracy. Media multitasking and intelligence were both unrelated to passive decay factors. These findings are consistent with a 2-component model of task-switching (Sohn & Anderson, 2001), as well as an automatic/executive framework of cognitive control (Schneider & Shiffrin, 1977). (PsycINFO Database Record (c) 2017 APA, all rights reserved).

Traveling-wave synchronous coil gun

NASA Technical Reports Server (NTRS)

Elliott, David G.

1991-01-01

An outline is presented of the coilgun concept, excitation, switching, brush commutation, power supply, and performance. It is shown that a traveling-wave synchronous coilgun permits independent adjustment of the magnetic field and armature current for high velocity at low armature mass fraction. Magnetic field energy is transferred from the rear of the wave to the front without passing through the power supply. Elaborate switching is required.

On the transient dynamics of piezoelectric-based, state-switched systems

NASA Astrophysics Data System (ADS)

Lopp, Garrett K.; Kelley, Christopher R.; Kauffman, Jeffrey L.

2018-01-01

This letter reports on the induced mechanical transients for piezoelectric-based, state-switching approaches utilizing both experimental tests and a numerical model that more accurately captures the dynamics associated with a switch between stiffness states. Currently, switching models instantaneously dissipate the stored piezoelectric voltage, resulting in a discrete change in effective stiffness states and a discontinuity in the system dynamics during the switching event. The proposed model allows for a rapid but continuous voltage dissipation and the corresponding variation between stiffness states, as one sees in physical implementations. This rapid variation in system stiffness when switching at a point of non-zero strain leads to high-frequency, large-amplitude transients in the system acceleration response. Utilizing a fundamental piezoelectric bimorph, a comparison between the numerical and experimental results reveals that these mechanical transients are much stronger than originally anticipated and masked by measurement hardware limitations, thus highlighting the significance of an appropriate system model governing the switch dynamics. Such a model enables designers to analyze systems that incorporate piezoelectric-based state switching with greater accuracy to ensure that these transients do not degrade the intended performance. Finally, if the switching does create unacceptable transients, controlling the duration of voltage dissipation enables control over the frequency content and peak amplitudes associated with the switch-induced acceleration transients.

Q-switched Nd:YAG optical vortex lasers.

PubMed

Kim, D J; Kim, J W; Clarkson, W A

2013-12-02

Q-switched operation of a high-quality Nd:YAG optical vortex laser with the first order Laguerre-Gaussian mode and well-determined helical wavefronts using a fiber-based pump beam conditioning scheme is reported. A simple two-mirror resonator incorporating an acousto-optic Q-switch was employed, along with an etalon and a Brewster plate to enforce the particular helicity of the output. The laser yielded Q-switched pulses with ~250 μJ pulse energy and ~33 ns pulse duration (FWHM) at a 0.1 kHz repetition rate for 5.1 W of absorbed pump power. The handedness of the helical wavefronts was preserved regardless of the repetition rates. The prospects of further power scaling and improved laser performance are discussed.

High-pulse-energy passively Q-switched quasi-monolithic microchip lasers operating in the sub-100-ps pulse regime.

PubMed

Nodop, D; Limpert, J; Hohmuth, R; Richter, W; Guina, M; Tünnermann, A

2007-08-01

We present passively Q-switched microchip lasers with items bonded by spin-on-glass glue. Passive Q-switching is obtained by a semiconductor saturable absorber mirror. The laser medium is a Nd:YVO(4) crystal. These lasers generate pulse peak powers up to 20 kW at a pulse duration as short as 50 ps and pulse repetition rates of 166 kHz. At 1064 nm, a linear polarized transversal and longitudinal single-mode beam is emitted. To the best of our knowledge, these are the shortest pulses in the 1 microJ energy range ever obtained with passively Q-switched microchip lasers. The quasi-monolithic setup ensures stable and reliable performance.

Advanced large scale GaAs monolithic IF switch matrix subsystem

NASA Technical Reports Server (NTRS)

Ch'en, D. R.; Petersen, W. C.; Kiba, W. M.

1992-01-01

Attention is given to a novel chip design and packaging technique to overcome the limitations due to the high signal isolation requirements of advanced communications systems. A hermetically sealed 6 x 6 monolithic GaAs switch matrix subsystem with integral control electronics based on this technique is presented. An 0-dB insertion loss and 60-dB crosspoint isolation over a 3.5-to-6-GHz band were achieved. The internal controller portion of the switching subsystem provides crosspoint control via a standard RS-232 computer interface and can be synchronized with an external systems control computer. The measured performance of this advanced switching subsystem is fully compatible with relatively static 'switchboard' as well as dynamic TDMA modes of operation.

New paradigm for task switching strategies while performing multiple tasks: entropy and symbolic dynamics analysis of voluntary patterns.

PubMed

Guastello, Stephen J; Gorin, Hillary; Huschen, Samuel; Peters, Natalie E; Fabisch, Megan; Poston, Kirsten

2012-10-01

It has become well established in laboratory experiments that switching tasks, perhaps due to interruptions at work, incur costs in response time to complete the next task. Conditions are also known that exaggerate or lessen the switching costs. Although switching costs can contribute to fatigue, task switching can also be an adaptive response to fatigue. The present study introduces a new research paradigm for studying the emergence of voluntary task switching regimes, self-organizing processes therein, and the possibly conflicting roles of switching costs and minimum entropy. Fifty-four undergraduates performed 7 different computer-based cognitive tasks producing sets of 49 responses under instructional conditions requiring task quotas or no quotas. The sequences of task choices were analyzed using orbital decomposition to extract pattern types and lengths, which were then classified and compared with regard to Shannon entropy, topological entropy, number of task switches involved, and overall performance. Results indicated that similar but different patterns were generated under the two instructional conditions, and better performance was associated with lower topological entropy. Both entropy metrics were associated with the amount of voluntary task switching. Future research should explore conditions affecting the trade-off between switching costs and entropy, levels of automaticity between task elements, and the role of voluntary switching regimes on fatigue.

Principle and verification of novel optical virtual private networks over multiprotocol label switching/optical packet switching networks

NASA Astrophysics Data System (ADS)

Zhang, Chongfu; Wang, Zhengsuan; Jin, Wei; Qiu, Kun

2012-11-01

A novel realization method of the optical virtual private networks (OVPN) over multiprotocol label switching/optical packet switching (MPLS/OPS) networks is proposed. In this scheme, the introduction of MPLS control plane makes OVPN over OPS networks more reliable and easier; OVPN makes use of the concept of high reconfiguration of light-paths offered by MPLS, to set up secure tunnels of high bandwidth across intelligent OPS networks. Through resource management, the signal mechanism, connection control, and the architecture of the creation and maintenance of OVPN are efficiently realized. We also present an OVPN architecture with two traffic priorities, which is used to analyze the capacity, throughput, delay time of the proposed networks, and the packet loss rate performance of the OVPN over MPLS/OPS networks based on full mesh topology. The results validate the applicability of such reliable connectivity to high quality services in the OVPN over MPLS/OPS networks. Along with the results, the feasibility of the approach as the basis for the next generation networks is demonstrated and discussed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Webb, Ian K.; Garimella, Sandilya V. B.; Tolmachev, Aleksey V.

A Structures for Lossless Ion Manipulations (SLIM) module that allows ion mobility separations and the switching of ions between alternative drift paths is described. The SLIM switch component has a “Tee” configuration and allows switching of ions between a linear path and a 90-degree bend. By controlling switching times, ions can be deflected to an alternative channel as a function of their mobilities. In the initial evaluation the switch is used in a static mode and shown compatible with high performance ion mobility separations at 4 torr. In the “dynamic mode” we show that mobility-selected ions can be switched intomore » the alternative channel, and that various ion species can be independently selected based on their mobilities for time-of-flight mass spectrometer (TOF MS) IMS detection and mass analysis. Ultimately, this development also provides the basis for e.g. the selection of specific mobilities for storage and accumulation, and key modules for the assembly of SLIM devices enabling much more complex sequences of ion manipulations.« less

Repetitively Q-switched Nd:BeL lasers

NASA Technical Reports Server (NTRS)

Degnan, J.; Birnbaum, M.; Deshazer, L. G.

1979-01-01

The thermal and mechanical characteristics which will ultimately limit the performance of Nd:BeL at high average power levels were investigated. The output beam characteristics (pulse width, peak power, beam dimensions and collimation) were determined at high repetition rates for both Nd:BeL and Nd:YAG. The output of Nd:BeL was shown to exceed that of Nd:YAG by a factor of 2.7 at low Q-switched repetition rates (1 Hz). This result follows from the smaller stimulated emission cross section of x-axis Nb:BeL compared to that of NdYAG by the same factor. At high repetition rates (10 Hz) the output of Nd:Bel falls to a level of three-fifths of its low repetition rate value while under similar tests the output of Nd:YAG remains essentially constant. A comparison of the measured values of the elasto-optic coefficients, the dn/dT values and the linear expansion coefficients for BeL and YAG failed to provide an explanation for the performance of BeL; however, thermal lensing was observed in Nd:BeL. Results imply that the output of a high repetition rate Q-switched Nd:BeL laser (high thermal loading) could be dramatically increased by utilization of a resonator design to compensate for the thermal lensing effects.

Mobility-Resolved Ion Selection in Uniform Drift Field Ion Mobility Spectrometry/Mass Spectrometry: Dynamic Switching in Structures for Lossless Ion Manipulations

DOE PAGES

Webb, Ian K.; Garimella, Sandilya V. B.; Tolmachev, Aleksey V.; ...

2014-09-15

A Structures for Lossless Ion Manipulations (SLIM) module that allows ion mobility separations and the switching of ions between alternative drift paths is described. The SLIM switch component has a “Tee” configuration and allows switching of ions between a linear path and a 90-degree bend. By controlling switching times, ions can be deflected to an alternative channel as a function of their mobilities. In the initial evaluation the switch is used in a static mode and shown compatible with high performance ion mobility separations at 4 torr. In the “dynamic mode” we show that mobility-selected ions can be switched intomore » the alternative channel, and that various ion species can be independently selected based on their mobilities for time-of-flight mass spectrometer (TOF MS) IMS detection and mass analysis. Ultimately, this development also provides the basis for e.g. the selection of specific mobilities for storage and accumulation, and key modules for the assembly of SLIM devices enabling much more complex sequences of ion manipulations.« less

K-Band Latching Switches

NASA Technical Reports Server (NTRS)

Piotrowski, W. S.; Raue, J. E.

1984-01-01

Design, development, and tests are described for two single-pole-double-throw latching waveguide ferrite switches: a K-band switch in WR-42 waveguide and a Ka-band switch in WR-28 waveguide. Both switches have structurally simple junctions, mechanically interlocked without the use of bonding materials; they are impervious to the effects of thermal, shock, and vibration stresses. Ferrite material for the Ka-band switch with a proper combination of magnetic and dielectric properties was available and resulted in excellent low loss, wideband performance. The high power handling requirement of the K-band switch limited the choice of ferrite to nickel-zinc compositions with adequate magnetic properties, but with too low relative dielectric constant. The relative dielectric constant determines the junction dimensions for given frequency responses. In this case the too low value unavoidably leads to a larger than optimum junction volume, increasing the insertion loss and restricting the operating bandwidth. Efforts to overcome the materials-related difficulties through the design of a composite junction with increased effective dielectric properties efforts to modify the relative dielectric constant of nickel-zinc ferrite are examined.

Contact material optimization and contact physics in metal-contact microelectromechanical systems (MEMS) switches

NASA Astrophysics Data System (ADS)

Yang, Zhenyin

Metal-contact MEMS switches hold great promise for implementing agile radio frequency (RF) systems because of their small size, low fabrication cost, low power consumption, wide operational band, excellent isolation and exceptionally low signal insertion loss. Gold is often utilized as a contact material for metal-contact MEMS switches due to its excellent electrical conductivity and corrosion resistance. However contact wear and stiction are the two major failure modes for these switches due to its material softness and high surface adhesion energy. To strengthen the contact material, pure gold was alloyed with other metal elements. We designed and constructed a new micro-contacting test facility that closely mimic the typical MEMS operation and utilized this facility to efficiently evaluate optimized contact materials. Au-Ni binary alloy system as the candidate contact material for MEMS switches was systematically investigated. A correlation between contact material properties (etc. microstructure, micro-hardness, electrical resistivity, topology, surface structures and composition) and micro-contacting performance was established. It was demonstrated nano-scale graded two-phase Au-Ni film could possibly yield an improved device performance. Gold micro-contact degradation mechanisms were also systematically investigated by running the MEMS switching tests under a wide range of test conditions. According to our quantitative failure analysis, field evaporation could be the dominant failure mode for highfield (> critical threshold field) hot switching; transient thermal-assisted wear could be the dominant failure mode for low-field hot switching; on the other hand, pure mechanical wear and steady current heating (1 mA) caused much less contact degradation in cold switching tests. Results from low-force (50 muN/micro-contact), low current (0.1 mA) tests on real MEMS switches indicated that continuous adsorbed films from ambient air could degrade the switch contact resistance. Our work also contributes to the field of general nano-science and technology by resolving the transfer directionality of field evaporation of gold in atomic force microscope (AFM)/scanning tunneling microscope (STM).

Vibration Control via Stiffness Switching of Magnetostrictive Transducers

NASA Technical Reports Server (NTRS)

Scheidler, Justin J.; Asnani, Vivake M.; Dapino, Marcelo J.

2016-01-01

This paper presents a computational study of structural vibration control that is realized by switching a magnetostrictive transducer between high and low stiffness states. Switching is accomplished by either changing the applied magnetic field with a voltage excitation or changing the shunt impedance on the transducer's coil (i.e., the magnetostrictive material's magnetic boundary condition). Switched-stiffness vibration control is simulated using a lumped mass supported by a damper and the magnetostrictive transducer (mount), which is represented by a nonlinear, electromechanical model. Free vibration of the mass is calculated while varying the mount's stiffness according to a reference switched-stiffness vibration control law. The results reveal that switching the magnetic field produces the desired change in stiffness, but also an undesired actuation force that can significantly degrade the vibration control. Hence, a modified switched-stiffness control law that accounts for the actuation force is proposed and implemented for voltage-controlled stiffness switching. The influence of the magnetomechanical bias condition is also discussed. Voltage-controlled stiffness switching is found to introduce damping equivalent to a viscous damping factor up to about 0.25; this is shown to primarily result from active vibration reduction caused by the actuation force. The merit of magnetostrictive switched-stiffness vibration control is then quantified by comparing the results of voltage- and shunt-controlled stiffness switching to the performance of optimal magnetostrictive shunt damping.

Plasma-Induced Nonvolatile Resistive Switching with Extremely Low SET Voltage in TiOxFy with AgF Nanoparticles.

PubMed

Sun, Xiangyu; Wu, Chuangui; Shuai, Yao; Pan, Xinqiang; Luo, Wenbo; You, Tiangui; Bogusz, Agnieszka; Du, Nan; Li, Yanrong; Schmidt, Heidemarie

2016-12-07

Low power consumption is crucial for the application of resistive random access memory. In this work, we present the bipolar resistive switching in an Ag/TiO x F y /Ti/Pt stack with extremely low switch-on voltage of 0.07 V. Operating current as low as 10 nA was also obtained by conductive atomic force microscopy. The highly defective TiO x F y layer was fabricated by plasma treatment using helium, oxygen, and carbon tetrafluoride orderly. During the electroforming process, AgF nanoparticles were formed due to the diffusion of Ag + which reacted with the adsorbed F - in the TiO x F y layer. These nanoparticles are of great importance to resistive switching performance because they are believed to be conductive phases and become part of the conducting path when the sample is switched to a low-resistance state.

Proton-Controlled Organic Microlaser Switch.

PubMed

Gao, Zhenhua; Zhang, Wei; Yan, Yongli; Yi, Jun; Dong, Haiyun; Wang, Kang; Yao, Jiannian; Zhao, Yong Sheng

2018-05-25

Microscale laser switches have been playing irreplaceable roles in the development of photonic devices with high integration levels. However, it remains a challenge to switch the lasing wavelengths across a wide range due to relatively fixed energy bands in traditional semiconductors. Here, we report a strategy to switch the lasing wavelengths among multiple states based on a proton-controlled intramolecular charge-transfer (ICT) process in organic dye-doped flexible microsphere resonant cavities. The protonic acids can effectively bind onto the ICT molecules, which thus enhance the ICT strength of the dyes and lead to a red-shifted gain behavior. On this basis, the gain region was effectively modulated by using acids with different proton-donating ability, and as a result, laser switching among multiple wavelengths was achieved. The results will provide guidance for the rational design of miniaturized lasers with performances based on the characteristic of organic optoelectronic materials.

Fabrication and Electrical Characterization of Correlated Oxide Field Effect Switching Devices for High Speed Electronics

DTIC Science & Technology

2015-11-19

Shriram Ramanathan HARVARD COLLEGE PRESIDENT & FELLOWS OF Final Report 11/19/2015 DISTRIBUTION A: Distribution approved for public release. AF Office... Harvard University 29 Oxford St, Pierce Hall, Cambridge, MA 02138 8. PERFORMING ORGANIZATION REPORT NUMBER 9. SPONSORING/MONITORING AGENCY NAME(S...characterization of correlated oxide field effect switching devices for  high speed electronics  PI: Shriram Ramanathan,  Harvard  University  AFOSR Grant FA9550‐12‐1

Reliability enhancement of Ohmic RF MEMS switches

NASA Astrophysics Data System (ADS)

Kurth, Steffen; Leidich, Stefan; Bertz, Andreas; Nowack, Markus; Frömel, Jörg; Kaufmann, Christian; Faust, Wolfgang; Gessner, Thomas; Akiba, Akira; Ikeda, Koichi

2011-02-01

This contribution deals with capacitively actuated Ohmic switches in series single pole single throw (SPST) configuration for DC up to 4 GHz signal frequency (<0.5 dB insertion loss, 35 dB isolation) and in shunt switch SPST configuration for a frequency range from DC up to 80 GHz (<1.2 dB insertion loss, 18 dB isolation at 60 GHz). A novel high aspect ratio MEMS fabrication sequence in combination with wafer level packaging is applied for fabrication of the samples and allows for a relatively large actuation electrode area, and for high actuation force resulting in fast onresponse time of 10 μs and off-response time of 6 μs at less than 5 V actuation voltage. Large actuation electrode area and a particular design feature for electrode over travel and dynamic contact separation lead to high contact force in the closed state and to high force for contact separation to overcome sticking. The switch contacts, which are consisting of noble metal, are made in one of the latest process steps. This minimizes contamination of the contact surfaces by fabrication sequence residuals. A life time of 1 Billion switch cycles has been achieved. This paper covers design for reliability issues and reliability test methods using accelerated life time test. Different test methods are combined to examine electric and mechanical motion parameters as well as RF performance.

The Influence of Feedback on Task-Switching Performance: A Drift Diffusion Modeling Account.

PubMed

Cohen Hoffing, Russell; Karvelis, Povilas; Rupprechter, Samuel; Seriès, Peggy; Seitz, Aaron R

2018-01-01

Task-switching is an important cognitive skill that facilitates our ability to choose appropriate behavior in a varied and changing environment. Task-switching training studies have sought to improve this ability by practicing switching between multiple tasks. However, an efficacious training paradigm has been difficult to develop in part due to findings that small differences in task parameters influence switching behavior in a non-trivial manner. Here, for the first time we employ the Drift Diffusion Model (DDM) to understand the influence of feedback on task-switching and investigate how drift diffusion parameters change over the course of task switch training. We trained 316 participants on a simple task where they alternated sorting stimuli by color or by shape. Feedback differed in six different ways between subjects groups, ranging from No Feedback (NFB) to a variety of manipulations addressing trial-wise vs. Block Feedback (BFB), rewards vs. punishments, payment bonuses and different payouts depending upon the trial type (switch/non-switch). While overall performance was found to be affected by feedback, no effect of feedback was found on task-switching learning. Drift Diffusion Modeling revealed that the reductions in reaction time (RT) switch cost over the course of training were driven by a continually decreasing decision boundary. Furthermore, feedback effects on RT switch cost were also driven by differences in decision boundary, but not in drift rate. These results reveal that participants systematically modified their task-switching performance without yielding an overall gain in performance.

A 7.8 kV nanosecond pulse generator with a 500 Hz repetition rate

NASA Astrophysics Data System (ADS)

Lin, M.; Liao, H.; Liu, M.; Zhu, G.; Yang, Z.; Shi, P.; Lu, Q.; Sun, X.

2018-04-01

Pseudospark switches are widely used in pulsed power applications. In this paper, we present the design and performance of a 500 Hz repetition rate high-voltage pulse generator to drive TDI-series pseudospark switches. A high-voltage pulse is produced by discharging an 8 μF capacitor through a primary windings of a setup isolation transformer using a single metal-oxide-semiconductor field-effect transistor (MOSFET) as a control switch. In addition, a self-break spark gap is used to steepen the pulse front. The pulse generator can deliver a high-voltage pulse with a peak trigger voltage of 7.8 kV, a peak trigger current of 63 A, a full width at half maximum (FWHM) of ~30 ns, and a rise time of 5 ns to the trigger pin of the pseudospark switch. During burst mode operation, the generator achieved up to a 500 Hz repetition rate. Meanwhile, we also provide an AC heater power circuit for heating a H2 reservoir. This pulse generator can be used in circuits with TDI-series pseudospark switches with either a grounded cathode or with a cathode electrically floating operation. The details of the circuits and their implementation are described in the paper.

Wideband Monolithic Tile for Reconfigurable Phased Arrays

DTIC Science & Technology

2017-03-01

has been developed for Reconfigurable Phased Array applications. Low loss and high isolation interconnection of switches within the radiating...there is no ground to connect shunt elements to. An integral part of the design was bias control. Mesa resistors are used for biasing. MIM...highest in resistance had the best performance over bandwidth because of reduced capacitive loading of the “off” arms of the Quad Switch on the central

Switch-Independent Task Representations in Frontal and Parietal Cortex.

PubMed

Loose, Lasse S; Wisniewski, David; Rusconi, Marco; Goschke, Thomas; Haynes, John-Dylan

2017-08-16

Alternating between two tasks is effortful and impairs performance. Previous fMRI studies have found increased activity in frontoparietal cortex when task switching is required. One possibility is that the additional control demands for switch trials are met by strengthening task representations in the human brain. Alternatively, on switch trials, the residual representation of the previous task might impede the buildup of a neural task representation. This would predict weaker task representations on switch trials, thus also explaining the performance costs. To test this, male and female participants were cued to perform one of two similar tasks, with the task being repeated or switched between successive trials. Multivoxel pattern analysis was used to test which regions encode the tasks and whether this encoding differs between switch and repeat trials. As expected, we found information about task representations in frontal and parietal cortex, but there was no difference in the decoding accuracy of task-related information between switch and repeat trials. Using cross-classification, we found that the frontoparietal cortex encodes tasks using a generalizable spatial pattern in switch and repeat trials. Therefore, task representations in frontal and parietal cortex are largely switch independent. We found no evidence that neural information about task representations in these regions can explain behavioral costs usually associated with task switching. SIGNIFICANCE STATEMENT Alternating between two tasks is effortful and slows down performance. One possible explanation is that the representations in the human brain need time to build up and are thus weaker on switch trials, explaining performance costs. Alternatively, task representations might even be enhanced to overcome the previous task. Here, we used a combination of fMRI and a brain classifier to test whether the additional control demands under switching conditions lead to an increased or decreased strength of task representations in frontoparietal brain regions. We found that task representations are not modulated significantly by switching processes and generalize across switching conditions. Therefore, task representations in the human brain cannot account for the performance costs associated with alternating between tasks. Copyright © 2017 the authors 0270-6474/17/378033-10$15.00/0.

Wide Bandgap Extrinsic Photoconductive Switches

NASA Astrophysics Data System (ADS)

Sullivan, James Stephen

Wide Bandgap Extrinsic Photoconductive Switches Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6H-SiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators. The successful development of a vanadium compensated, 6H-SiC extrinsic photoconductive switch for use as a closing switch for compact accelerator applications was realized by improvements made to the vanadium, nitrogen and boron impurity densities. The changes made to the impurity densities were based on the physical intuition outlined and simple rate equation models. The final 6H-SiC impurity 'recipe' calls for vanadium, nitrogen and boron densities of 2.5 e17 cm-3, 1.25e17 cm-3 and ≤ 1e16 cm-3, respectively. This recipe was originally developed to maximize the quantum efficiency of the vanadium compensated 6H-SiC, while maintaining a thermally stable semi-insulating material. The rate equation models indicate that, besides increasing the quantum efficiency, the impurity recipe should be expected to also increase the carrier recombination time. Three generations of 6H-SiC materials were tested. The third generation vanadium compensated 6H-SiC has average impurity densities close to the recipe values. Extrinsic photoconductive switches constructed from the third generation vanadium compensated, 6H-SiC, 1 mm thick, 1 cm2, substrates have achieved high power operation at 16 kV with pulsed currents exceeding 1400 Amperes and a minimum on resistance of 1 ohm. The extrinsic photoconductive switch performance of the third generation 6H-SiC material was improved by a factor of up to 50 for excitation at the 532 nm wavelength compared to the initial 6H-SiC material. Switches based on this material have been incorporated into a prototype compact proton medical accelerator being developed by the Compact Particle Acceleration Corporation (CPAC). The vanadium compensated, 6H-SiC, extrinsic photoconductive switch operates differently when excited by 1064, or 532 nm, wavelength light. The 6H-SiC extrinsic photoconductive switch is a unipolar device when excited with 1064 nm light. The carriers are electrons excited from filled vanadium acceptor levels and other electron traps located within 1.17 eV of the conduction band. The switch is bipolar at 532 nm since the carriers consist of holes, as well as electrons. The holes are primarily generated by the excitation of valence band electrons into empty trap/acceptor levels and by two-photon absorption. Carrier generation by two-photon absorption becomes more important at high applied optical intensity at 532 nm and contributes to the supralinear behavior of switch conductance as a function of optical power. The 6H-SiC switch material is trap dominated at low nitrogen to vanadium ratios. The trap dominated vanadium compensated 6H-SiC exhibits low quantum efficiency when excited with 1064 and 532 nm light and has a carrier recombination time of ˜ 150 - 300 ps. The vanadium compensated 6H-SiC transitions to an impurity dominated material as the ratio of nitrogen to vanadium is increased to 0.5. The increased nitrogen doping produces a material with much higher quantum efficiency and carrier recombination time of 0.9 to 1.0 ns. The iron compensated 2H-GaN did not perform well as an extrinsic photoconductive switch. The density of carriers generated at 1064 nm was, low indicating that there were very few electrons trapped in the iron acceptor level located at 0.5 - 0.6 eV below the conduction band. Carrier generation at 532 nm was dominated by two photon absorption resulting in the switch conductance increasing as the square of applied optical intensity. A minimum switch resistance of 0.8 ohms was calculated for the 400 nm thick, 1.2 by 1.2 cm, 2H-GaN switch for an applied optical intensity of 41.25 MW/cm2. An optical intensity of ˜ 70 MW/cm2 at 532 nm would be required to achieve a 0.8 ohm on resistance for a 1 mm thick, 1 cm2, 2H-GaN switch.

? stability of wind turbine switching control

NASA Astrophysics Data System (ADS)

Palejiya, Dushyant; Shaltout, Mohamed; Yan, Zeyu; Chen, Dongmei

2015-01-01

In order to maximise the wind energy capture, wind turbines are operated at variable speeds. Depending on the wind speed, a turbine switches between two operating modes: a low wind speed mode and a high wind speed mode. During the low wind speed mode, the control objective is to maximise wind energy capture by controlling both the blade pitch angle and the electrical generator torque. During the high wind speed mode, the control goal is to maintain the rated power generation by only adjusting the blade pitch angle. This paper establishes the stability criteria for the switching operation of wind turbines using ? gain under the nonlinear control framework. Also, the performance of the wind turbine system is analysed by using the step response, a well-known measure for second-order linear systems.

WHY DOES OLDER ADULTS' BALANCE BECOME LESS STABLE WHEN WALKING AND PERFORMING A SECONDARY TASK? EXAMINATION OF ATTENTIONAL SWITCHING ABILITIES

PubMed Central

Hawkes, Teresa D; Siu, Ka-Chun; Silsupadol, Patima; Woollacott, Marjorie H.

2011-01-01

Previous research using dual-task paradigms indicates balance-impaired older adults (BIOA) are less able to flexibly shift attentional focus between a cognitive and motor task than healthy older adults (HOA). Shifting attention is a component of executive function. Task switch tests assess executive attention function. This multivariate study asked if BIOAs demonstrate greater task switching deficits than HOAs. A group of 39 HOA (65–80 yrs) and BIOA (65–87 yrs) subjects performed a visuo-spatial task switch. A sub-group of subjects performed a dual-task obstacle avoidance paradigm. All participants completed the Berg Balance Scale (BBS) and Timed Up and Go (TUG). We assessed differences by group for: 1) visuo-spatial task switch reaction times (switch/no-switch), and performance on the BBS and TUG. Our balance groups differed significantly on BBS score (p < .001) and switch reaction time (p = .032), but not the TUG. This confirmed our hypothesis that neuromuscular and executive attention function differs between these two groups. For our BIOA sub-group, gait velocity correlated negatively with performance on the switch condition (p=.036). This suggests that BIOA efficiency of attentional allocation in dual task settings should be further explored. PMID:21964051

Forming free and ultralow-power erase operation in atomically crystal TiO2 resistive switching

NASA Astrophysics Data System (ADS)

Dai, Yawei; Bao, Wenzhong; Hu, Linfeng; Liu, Chunsen; Yan, Xiao; Chen, Lin; Sun, Qingqing; Ding, Shijin; Zhou, Peng; Zhang, David Wei

2017-06-01

Two-dimensional layered materials (2DLMs) have attracted broad interest from fundamental sciences to industrial applications. Their applications in memory devices have been demonstrated, yet much still remains to explore optimal materials and device structure for practical application. In this work, a forming-free, bipolar resistive switching behavior are demonstrated in 2D TiO2-based resistive random access memory (RRAM). Physical adsorption method is adopted to achieve high quality, continuous 2D TiO2 network efficiently. The 2D TiO2 RRAM devices exhibit superior properties such as fast switching capability (20 ns of erase operation) and extremely low erase energy consumption (0.16 fJ). Furthermore, the resistive switching mechanism is attributed to the formation and rupture of oxygen vacancies-based percolation path in 2D TiO2 crystals. Our results pave the way for the implementation of high performance 2DLMs-based RRAM in the next generation non-volatile memory (NVM) application.

A trident dithienylethene-perylenemonoimide dyad with super fluorescence switching speed and ratio

NASA Astrophysics Data System (ADS)

Li, Chong; Yan, Hui; Zhao, Ling-Xi; Zhang, Guo-Feng; Hu, Zhe; Huang, Zhen-Li; Zhu, Ming-Qiang

2014-12-01

Photoswitchable fluorescent diarylethenes are promising in molecular optical memory and photonic devices. However, the performance of current diarylethenes is far from satisfactory because of the scarcity of high-speed switching capability and large fluorescence on-off ratio. Here we report a trident perylenemonoimide dyad modified by triple dithienylethenes whose photochromic fluorescence quenching ratio at the photostationary state exceeds 10,000 and the fluorescence quenching efficiency is close to 100% within seconds of ultraviolet irradiation. The highly sensitive fluorescence on/off switching of the trident dyad enables recyclable fluorescence patterning and all-optical transistors. The prototype optical device based on the trident dyad enables the optical switching of incident light and conversion from incident light wavelength to transmitted light wavelength, which is all-optically controlled, reversible and wavelength-convertible. In addition, the trident dyad-staining block copolymer vesicles are observed via optical nanoimaging with a sub-100 nm resolution, portending a potential prospect of the dithienylethene dyad in super-resolution imaging.

A trident dithienylethene-perylenemonoimide dyad with super fluorescence switching speed and ratio.

PubMed

Li, Chong; Yan, Hui; Zhao, Ling-Xi; Zhang, Guo-Feng; Hu, Zhe; Huang, Zhen-Li; Zhu, Ming-Qiang

2014-12-12

Photoswitchable fluorescent diarylethenes are promising in molecular optical memory and photonic devices. However, the performance of current diarylethenes is far from satisfactory because of the scarcity of high-speed switching capability and large fluorescence on-off ratio. Here we report a trident perylenemonoimide dyad modified by triple dithienylethenes whose photochromic fluorescence quenching ratio at the photostationary state exceeds 10,000 and the fluorescence quenching efficiency is close to 100% within seconds of ultraviolet irradiation. The highly sensitive fluorescence on/off switching of the trident dyad enables recyclable fluorescence patterning and all-optical transistors. The prototype optical device based on the trident dyad enables the optical switching of incident light and conversion from incident light wavelength to transmitted light wavelength, which is all-optically controlled, reversible and wavelength-convertible. In addition, the trident dyad-staining block copolymer vesicles are observed via optical nanoimaging with a sub-100 nm resolution, portending a potential prospect of the dithienylethene dyad in super-resolution imaging.

Switching between univalent task-sets in schizophrenia: ERP evidence of an anticipatory task-set reconfiguration deficit.

PubMed

Karayanidis, Frini; Nicholson, Rebecca; Schall, Ulrich; Meem, Lydia; Fulham, Ross; Michie, Patricia T

2006-10-01

The present study used behavioral and event-related potential (ERP) indices of task-switching to examine whether schizophrenia patients have a specific deficit in anticipatory task-set reconfiguration. Participants switched between univalent tasks in an alternating runs paradigms with blocked response-stimulus interval (RSI) manipulation (150, 300, 600, and 1200ms). Nineteen high functioning people with schizophrenia were compared to controls that were matched for age, gender, education and premorbid IQ estimate. Schizophrenia patients had overall increased RT, but no increase in corrected RT switch cost. In the schizophrenia group, ERPs showed reduced activation of the differential positivity in anticipation of switch trial at the optimal 600ms RSI and reduced activation of the frontal post-stimulus switch negativity at both 600 and 1200ms RSI compared to the control group. Despite no behavioral differences in task switching performance, anticipatory and stimulus-triggered ERP indices of task-switching suggest group differences in processing of switch and repeat trials, especially at longer RSI conditions that for control participants provide opportunity for anticipatory activation of task-set reconfiguration processes. These results are compatible with impaired implementation of endogenously driven processes in schizophrenia and greater reliance on external task cues, especially at long preparation intervals.

All-optical controlled switching of solitons

NASA Astrophysics Data System (ADS)

Man, Wai Sing

1999-11-01

In this dissertation, we have numerically investigated various method of switching solitons using two different nonlinear optical switching devices, namely the twin core nonlinear directional coupler (TCNLDC) and the nonlinear optical loop mirror (NOLM). In the case of TCNLDC, four different schemes were explored where the polarization of the controlling pulse is either parallel or orthogonal to that of the signal soliton, or the controlling pulse may be launched into either of the input ports or it may have a wavelength different from that of the signal. It has been shown that high switching efficiency and distortionless propagation of the signal pulse through the coupler can only be achieved for the case in which the control pulse is launched into the adjacent port of the directional coupler and that its dispersion has equal magnitude but opposite sign as that of the signal. The effect of varying pulse width, walk-off and timing jitter were also investigated for this particular scheme for signal pulse width of 1 ps wide. In the case of NOLM, a control pulse having central wavelength located at the normal dispersion region is used to switch the soliton. The control pulse width and the NOLM's loop length were varied to obtain the switched soliton with minimum distortion and high switching efficiency. In this analysis, Raman effect is included because the control pulse transfers part of its energy to the co-propagating signal pulse in the optical loop. A compact soliton laser has also been developed for this project and its performance was analyzed experimentally and numerically. In our analysis of this soliton laser, we found that the wavelength of the mode-locked pulse can be tuned by varying the polarization elements in the laser and this is entirely due to the birefringence in the laser cavity. In summary, our works have shown that optical solitons can be switched effectively by TCNLDC and NOLM in the high bit-rate and low switching energy regime. (Abstract shortened by UMI.)

Wafer-size free-standing single-crystalline graphene device arrays

NASA Astrophysics Data System (ADS)

Li, Peng; Jing, Gaoshan; Zhang, Bo; Sando, Shota; Cui, Tianhong

2014-08-01

We report an approach of wafer-scale addressable single-crystalline graphene (SCG) arrays growth by using pre-patterned seeds to control the nucleation. The growth mechanism and superb properties of SCG were studied. Large array of free-standing SCG devices were realized. Characterization of SCG as nano switches shows excellent performance with life time (>22 000 times) two orders longer than that of other graphene nano switches reported so far. This work not only shows the possibility of producing wafer-scale high quality SCG device arrays but also explores the superb performance of SCG as nano devices.

Exploring the repetition bias in voluntary task switching.

PubMed

Mittelstädt, Victor; Dignath, David; Schmidt-Ott, Magdalena; Kiesel, Andrea

2018-01-01

In the voluntary task-switching paradigm, participants are required to randomly select tasks. We reasoned that the consistent finding of a repetition bias (i.e., participants repeat tasks more often than expected by chance) reflects reasonable adaptive task selection behavior to balance the goal of random task selection with the goals to minimize the time and effort for task performance. We conducted two experiments in which participants were provided with variable amount of preview for the non-chosen task stimuli (i.e., potential switch stimuli). We assumed that switch stimuli would initiate some pre-processing resulting in improved performance in switch trials. Results showed that reduced switch costs due to extra-preview in advance of each trial were accompanied by more task switches. This finding is in line with the characteristics of rational adaptive behavior. However, participants were not biased to switch tasks more often than chance despite large switch benefits. We suggest that participants might avoid effortful additional control processes that modulate the effects of preview on task performance and task choice.

Oxygen-modulated quantum conductance for ultrathin HfO 2 -based memristive switching devices

DOE PAGES

Zhong, Xiaoliang; Rungger, Ivan; Zapol, Peter; ...

2016-10-24

Memristive switching devices, candidates for resistive random access memory technology, have been shown to switch off through a progression of states with quantized conductance and subsequent noninteger conductance (in terms of conductance quantum G 0). We have performed calculations based on density functional theory to model the switching process for a Pt-HfO 2-Pt structure, involving the movement of one or two oxygen atoms. Oxygen atoms moving within a conductive oxygen vacancy filament act as tunneling barriers, and partition the filament into weakly coupled quantum wells. We show that the low-bias conductance decreases exponentially when one oxygen atom moves away frommore » interface. In conclusion, our results demonstrate the high sensitivity of the device conductance to the position of oxygen atoms.« less

Oxygen-modulated quantum conductance for ultrathin HfO 2 -based memristive switching devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, Xiaoliang; Rungger, Ivan; Zapol, Peter

Memristive switching devices, candidates for resistive random access memory technology, have been shown to switch off through a progression of states with quantized conductance and subsequent noninteger conductance (in terms of conductance quantum G 0). We have performed calculations based on density functional theory to model the switching process for a Pt-HfO 2-Pt structure, involving the movement of one or two oxygen atoms. Oxygen atoms moving within a conductive oxygen vacancy filament act as tunneling barriers, and partition the filament into weakly coupled quantum wells. We show that the low-bias conductance decreases exponentially when one oxygen atom moves away frommore » interface. In conclusion, our results demonstrate the high sensitivity of the device conductance to the position of oxygen atoms.« less

On-chip switch for reconfigurable mode-multiplexing optical network.

PubMed

Sun, Chunlei; Yu, Yu; Chen, Guanyu; Zhang, Xinliang

2016-09-19

The switching and routing is essential for an advanced and reconfigurable optical network, and great efforts have been done for traditional single-mode system. We propose and demonstrate an on-chip switch compatible with mode-division multiplexing system. By controlling the induced phase difference, the functionalities of dynamically routing data channels can be achieved. The proposed switch is experimentally demonstrated with low insertion loss of ~1 dB and high extinction ratio of ~20 dB over the C-band for OFF-ON switchover. For further demonstration, the non-return-to-zero on-off keying signals at 10 Gb/s carried on the two spatial modes are successfully processed. Open and clear eye diagrams can be observed and the bit error rate measurements indicate a good data routing performance.

Submicrosecond Power-Switching Test Circuit

NASA Technical Reports Server (NTRS)

Folk, Eric N.

2006-01-01

A circuit that changes an electrical load in a switching time shorter than 0.3 microsecond has been devised. This circuit can be used in testing the regulation characteristics of power-supply circuits . especially switching power-converter circuits that are supposed to be able to provide acceptably high degrees of regulation in response to rapid load transients. The combination of this power-switching circuit and a known passive constant load could be an attractive alternative to a typical commercially available load-bank circuit that can be made to operate in nominal constant-voltage, constant-current, and constant-resistance modes. The switching provided by a typical commercial load-bank circuit in the constant-resistance mode is not fast enough for testing of regulation in response to load transients. Moreover, some test engineers do not trust the test results obtained when using commercial load-bank circuits because the dynamic responses of those circuits are, variously, partly unknown and/or excessively complex. In contrast, the combination of this circuit and a passive constant load offers both rapid switching and known (or at least better known) load dynamics. The power-switching circuit (see figure) includes a signal-input section, a wide-hysteresis Schmitt trigger that prevents false triggering in the event of switch-contact bounce, a dual-bipolar-transistor power stage that drives the gate of a metal oxide semiconductor field-effect transistor (MOSFET), and the MOSFET, which is the output device that performs the switching of the load. The MOSFET in the specific version of the circuit shown in the figure is rated to stand off a potential of 100 V in the "off" state and to pass a current of 20 A in the "on" state. The switching time of this circuit (the characteristic time of rise or fall of the potential at the drain of the MOSFET) is .300 ns. The circuit can accept any of three control inputs . which one depending on the test that one seeks to perform: a repetitive waveform from a signal generator, momentary closure of a push-button switch, or closure or opening of a manually operated on/off switch. In the case of a signal generator, one can adjust the frequency and duty cycle as needed to obtain the desired AC power-supply response, which one could display on an oscilloscope. Momentary switch closure could be useful for obtaining (and, if desired, displaying on an oscilloscope set to trigger on an event) the response of a power supply to a single load transient. The on/off switch can be used to switch between load states in which static-load regulation measurements are performed.

The influence of cue-task association and location on switch cost and alternating-switch cost.

PubMed

Arbuthnott, Katherine D; Woodward, Todd S

2002-03-01

Task-switching performance is strongly influenced by whether the imperative stimulus uniquely specifies which task to perform: Switch cost is substantial with bivalent stimuli but is greatly reduced with univalent stimuli, suggesting that available contextual information influences processing in task-switching situations. The present study examined whether task-relevant information provided by task cues influences the magnitude of switch cost in a parallel manner. Cues presented 500 ms prior to a trivalent stimulus indicated which of three tasks to perform. These cues either had a preexisting association with the to-be-performed task (verbal cues), or a recently learned association with the task (spatial and shape cues). The results paralleled the effects of stimulus bivalence: substantial switch cost with recently learned cue-task associations and greatly reduced switch cost with preexisting cue-task associations. This suggests that both stimulus-based and cue-based information can activate the relevant task set, possibly providing external support to endogenous control processes. Alternating-switch cost, a greater cost for switching back to a recently abandoned task, was also observed with both preexisting and recently learned cue-task associations, but only when all tasks were presented in a consistent spatial location. When spatial location was used to cue the to-be-performed tasks, no alternating-switch cost was observed, suggesting that different processes may be involved when tasks are uniquely located in space. Specification of the nature of these processes may prove to be complex, as post-hoc inspection of the data suggested that for the spatial cue condition, the alternating-switch cost may oscillate between cost and benefit, depending on the relevant task.

Low-Loss, High-Isolation Microwave Microelectromechanical Systems (MEMS) Switches Being Developed

NASA Technical Reports Server (NTRS)

Ponchak, George E.

2002-01-01

Switches, electrical components that either permit or prevent the flow of electricity, are the most important and widely used electrical devices in integrated circuits. In microwave systems, switches are required for switching between the transmitter and receiver; in communication systems, they are needed for phase shifters in phased-array antennas, for radar and communication systems, and for the new class of digital or software definable radios. Ideally, switches would be lossless devices that did not depend on the electrical signal's frequency or power, and they would not consume electrical power to change from OFF to ON or to maintain one of these two states. Reality is quite different, especially at microwave frequencies. Typical switches in microwave integrated circuits are pin diodes or gallium arsenide (GaAs) field-effect transistors that are nonlinear, with characteristics that depend on the power of the signal. In addition, they are frequency-dependent, lossy, and require electrical power to maintain a certain state. A new type of component has been developed that overcomes most of these technical difficulties. Microelectromechanical (MEMS) switches rely on mechanical movement as a response to an applied electrical force to either transmit or reflect electrical signal power. The NASA Glenn Research Center has been actively developing MEMS for microwave applications for over the last 5 years. Complete fabrication procedures have been developed so that the moving parts of the switch can be released with near 100-percent yield. Moreover, the switches fabricated at Glenn have demonstrated state-of-the-art performance. A typical MEMS switch is shown. The switch extends over the signal and ground lines of a finite ground coplanar waveguide, a commonly used microwave transmission line. In the state shown, the switch is in the UP state and all the microwave power traveling along the transmission line proceeds unimpeded. When a potential difference is applied between the cantilever and the transmission line, the cantilever is pulled downward until it connects the signal line to the ground planes, creating a short circuit. In this state, all the microwave power is reflected. The graph shows the measured performance of the switch, which has less than 0.1 dB of insertion loss and greater than 30dB of isolation. These switches consume negligible electrical power and are extremely linear. Additional research is required to address reliability and to increase the switching speed.

Evaluation of fluorophores for optimal performance in localization-based super-resolution imaging

PubMed Central

Dempsey, Graham T.; Vaughan, Joshua C.; Chen, Kok Hao; Bates, Mark; Zhuang, Xiaowei

2011-01-01

One approach to super-resolution fluorescence imaging uses sequential activation and localization of individual fluorophores to achieve high spatial resolution. Essential to this technique is the choice of fluorescent probes — the properties of the probes, including photons per switching event, on/off duty cycle, photostability, and number of switching cycles, largely dictate the quality of super-resolution images. While many probes have been reported, a systematic characterization of the properties of these probes and their impact on super-resolution image quality has been described in only a few cases. Here, we quantitatively characterized the switching properties of 26 organic dyes and directly related these properties to the quality of super-resolution images. This analysis provides a set of guidelines for characterization of super-resolution probes and a resource for selecting probes based on performance. Our evaluation identified several photoswitchable dyes with good to excellent performance in four independent spectral ranges, with which we demonstrated low crosstalk, four-color super-resolution imaging. PMID:22056676

Novel nano materials for high performance logic and memory devices

NASA Astrophysics Data System (ADS)

Das, Saptarshi

After decades of relentless progress, the silicon CMOS industry is approaching a stall in device performance for both logic and memory devices due to fundamental scaling limitations. In order to reinforce the accelerating pace, novel materials with unique properties are being proposed on an urgent basis. This list includes one dimensional nanotubes, quasi one dimensional nanowires, two dimensional atomistically thin layered materials like graphene, hexagonal boron nitride and the more recently the rich family of transition metal di-chalcogenides comprising of MoS2, WSe2, WS2 and many more for logic applications and organic and inorganic ferroelectrics, phase change materials and magnetic materials for memory applications. Only time will tell who will win, but exploring these novel materials allow us to revisit the fundamentals and strengthen our understanding which will ultimately be beneficial for high performance device design. While there has been growing interest in two-dimensional (2D) crystals other than graphene, evaluating their potential usefulness for electronic applications is still in its infancies due to the lack of a complete picture of their performance potential. The fact that the 2-D layered semiconducting di-chalcogenides need to be connected to the "outside" world in order to capitalize on their ultimate potential immediately emphasizes the importance of a thorough understanding of the contacts. This thesis demonstrate that through a proper understanding and design of source/drain contacts and the right choice of number of MoS2 layers the excellent intrinsic properties of this 2D material can be harvested. A comprehensive experimental study on the dependence of carrier mobility on the layer thickness of back gated multilayer MoS 2 field effect transistors is also provided. A resistor network model that comprises of Thomas-Fermi charge screening and interlayer coupling is used to explain the non-monotonic trend in the extracted field effect mobility with the layer thickness. The non-monotonic trend suggests that in order to harvest the maximum potential of MoS2 for high performance device applications, a layer thickness in the range of 6-12 nm would be ideal. Finally using scandium contacts on 10nm thick exfoliated MoS2 flakes that are covered by a 15nm ALD grown Al2O3 film, record high mobility of 700cm2/Vs is achieved at room-temperature which is extremely encouraging for the design of high performance logic devices. The destructive nature of the readout process in Ferroelectric Random Access Memories (FeRAMs) is one of the major limiting factors for their wide scale commercialization. Utilizing Ferroelectric Field-Effect Transistor RAM (FeTRAM) instead solves the destructive read out problem, but at the expense of introducing crystalline ferroelectrics that are hard to integrate into CMOS. In order to address these challenges a novel, fully functional, CMOS compatible, One-Transistor-One-Transistor (1T1T) memory cell architecture using an organic ferroelectric -- PVDF-TrFE -- as the memory storage unit (gate oxide) and a silicon nanowire as the memory read out unit (channel material) is proposed and experimentally demonstrated. While evaluating the scaling potential of the above mentioned organic FeTRAM, it is found that the switching time and switching voltage of this organic copolymer PVDF-TrFE exhibits an unexpected scaling behavior as a function of the lateral device dimensions. The phenomenological theory, that explains this abnormal scaling trend, involves in-plane interchain and intrachain interaction of the copolymer - resulting in a power-law dependence of the switching field on the device area (ESW alpha ACH0.1) that is ultimately responsible for the decrease in the switching time and switching voltage. These findings are encouraging since they indicate that scaling the switching voltage and switching time without aggressively scaling the copolymer thickness occurs naturally while scaling the device area -- in this way ultimately improving the packing density and leading towards high performance memory devices.

Effects Of Environmental And Operational Stresses On RF MEMS Switch Technologies For Space Applications

NASA Technical Reports Server (NTRS)

Jah, Muzar; Simon, Eric; Sharma, Ashok

2003-01-01

Micro Electro Mechanical Systems (MEMS) have been heralded for their ability to provide tremendous advantages in electronic systems through increased electrical performance, reduced power consumption, and higher levels of device integration with a reduction of board real estate. RF MEMS switch technology offers advantages such as low insertion loss (0.1- 0.5 dB), wide bandwidth (1 GHz-100 GHz), and compatibility with many different process technologies (quartz, high resistivity Si, GaAs) which can replace the use of traditional electronic switches, such as GaAs FETS and PIN Diodes, in microwave systems for low signal power (x < 500 mW) applications. Although the electrical characteristics of RF MEMS switches far surpass any existing technologies, the unknown reliability, due to the lack of information concerning failure modes and mechanisms inherent to MEMS devices, create an obstacle to insertion of MEMS technology into high reliability applications. All MEMS devices are sensitive to moisture and contaminants, issues easily resolved by hermetic or near-hermetic packaging. Two well-known failure modes of RF MEMS switches are charging in the dielectric layer of capacitive membrane switches and contact interface stiction of metal-metal switches. Determining the integrity of MEMS devices when subjected to the shock, vibration, temperature extremes, and radiation of the space environment is necessary to facilitate integration into space systems. This paper will explore the effects of different environmental stresses, operational life cycling, temperature, mechanical shock, and vibration on the first commercially available RF MEMS switches to identify relevant failure modes and mechanisms inherent to these device and packaging schemes for space applications. This paper will also describe RF MEMS Switch technology under development at NASA GSFC.

Design and Prototype of an Automated Column-Switching HPLC System for Radiometabolite Analysis.

PubMed

Vasdev, Neil; Collier, Thomas Lee

2016-08-17

Column-switching high performance liquid chromatography (HPLC) is extensively used for the critical analysis of radiolabeled ligands and their metabolites in plasma. However, the lack of streamlined apparatus and consequently varying protocols remain as a challenge among positron emission tomography laboratories. We report here the prototype apparatus and implementation of a fully automated and simplified column-switching procedure to allow for the easy and automated determination of radioligands and their metabolites in up to 5 mL of plasma. The system has been used with conventional UV and coincidence radiation detectors, as well as with a single quadrupole mass spectrometer.

Task Switching Effects in Anticipation Timing

ERIC Educational Resources Information Center

Fairbrother, Jeffrey T.; Brueckner, Sebastian

2008-01-01

To understand how task switching affects human performance, there is a need to investigate how it influences the performance of tasks other than those involving bivalent stimulus categorization. The purpose of this study, therefore, was to investigate the effects of task switching on anticipation timing performance, which typically requires…

Low-temperature plasma simulations with the LSP PIC code

NASA Astrophysics Data System (ADS)

Carlsson, Johan; Khrabrov, Alex; Kaganovich, Igor; Keating, David; Selezneva, Svetlana; Sommerer, Timothy

2014-10-01

The LSP (Large-Scale Plasma) PIC-MCC code has been used to simulate several low-temperature plasma configurations, including a gas switch for high-power AC/DC conversion, a glow discharge and a Hall thruster. Simulation results will be presented with an emphasis on code comparison and validation against experiment. High-voltage, direct-current (HVDC) power transmission is becoming more common as it can reduce construction costs and power losses. Solid-state power-electronics devices are presently used, but it has been proposed that gas switches could become a compact, less costly, alternative. A gas-switch conversion device would be based on a glow discharge, with a magnetically insulated cold cathode. Its operation is similar to that of a sputtering magnetron, but with much higher pressure (0.1 to 0.3 Torr) in order to achieve high current density. We have performed 1D (axial) and 2D (axial/radial) simulations of such a gas switch using LSP. The 1D results were compared with results from the EDIPIC code. To test and compare the collision models used by the LSP and EDIPIC codes in more detail, a validation exercise was performed for the cathode fall of a glow discharge. We will also present some 2D (radial/azimuthal) LSP simulations of a Hall thruster. The information, data, or work presented herein was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000298.

Time Sharing Between Robotics and Process Control: Validating a Model of Attention Switching.

PubMed

Wickens, Christopher Dow; Gutzwiller, Robert S; Vieane, Alex; Clegg, Benjamin A; Sebok, Angelia; Janes, Jess

2016-03-01

The aim of this study was to validate the strategic task overload management (STOM) model that predicts task switching when concurrence is impossible. The STOM model predicts that in overload, tasks will be switched to, to the extent that they are attractive on task attributes of high priority, interest, and salience and low difficulty. But more-difficult tasks are less likely to be switched away from once they are being performed. In Experiment 1, participants performed four tasks of the Multi-Attribute Task Battery and provided task-switching data to inform the role of difficulty and priority. In Experiment 2, participants concurrently performed an environmental control task and a robotic arm simulation. Workload was varied by automation of arm movement and both the phases of environmental control and existence of decision support for fault management. Attention to the two tasks was measured using a head tracker. Experiment 1 revealed the lack of influence of task priority and confirmed the differing roles of task difficulty. In Experiment 2, the percentage attention allocation across the eight conditions was predicted by the STOM model when participants rated the four attributes. Model predictions were compared against empirical data and accounted for over 95% of variance in task allocation. More-difficult tasks were performed longer than easier tasks. Task priority does not influence allocation. The multiattribute decision model provided a good fit to the data. The STOM model is useful for predicting cognitive tunneling given that human-in-the-loop simulation is time-consuming and expensive. © 2016, Human Factors and Ergonomics Society.

A three-sided rearrangeable switching network for a binary fat tree

NASA Astrophysics Data System (ADS)

Yen, Mao-Hsu; Yu, Chu; Shin, Haw-Yun; Chen, Sao-Jie

2011-06-01

A binary fat tree needs an internal node to interconnect the left-children, right-children and parent terminals to each other. In this article, we first propose a three-stage, 3-sided rearrangeable switching network for the implementation of a binary fat tree. The main component of this 3-sided switching network (3SSN) consists of a polygonal switch block (PSB) interconnected by crossbars. With the same size and the same number of switches as our 3SSN, a three-stage, 3-sided clique-based switching network is shown to be not rearrangeable. Also, the effects of the rearrangeable structure and the number of terminals on the network switch-efficiency are explored and a proper set of parameters has been determined to minimise the number of switches. We derive that a rearrangeable 3-sided switching network with switches proportional to N 3/2 is most suitable to interconnect N terminals. Moreover, we propose a new Polygonal Field Programmable Gate Array (PFPGA) that consists of logic blocks interconnected by our 3SSN, such that the logic blocks in this PFPGA can be grouped into clusters to implement different logic functions. Since the programmable switches usually have high resistance and capacitance and occupy a large area, we have to consider the effect of the 3SSN structure and the granularity of its cluster logic blocks on the switch efficiency of PFPGA. Experiments on benchmark circuits show that the switch and speed performances are significantly improved. Based on the experimental results, we can determine the parameters of PFPGA for the VLSI implementation.

Power control electronics for cryogenic instrumentation

NASA Technical Reports Server (NTRS)

Ray, Biswajit; Gerber, Scott S.; Patterson, Richard L.; Myers, Ira T.

1995-01-01

In order to achieve a high-efficiency high-density cryogenic instrumentation system, the power processing electronics should be placed in the cold environment along with the sensors and signal-processing electronics. The typical instrumentation system requires low voltage dc usually obtained from processing line frequency ac power. Switch-mode power conversion topologies such as forward, flyback, push-pull, and half-bridge are used for high-efficiency power processing using pulse-width modulation (PWM) or resonant control. This paper presents several PWM and multiresonant power control circuits, implemented using commercially available CMOS and BiCMOS integrated circuits, and their performance at liquid-nitrogen temperature (77 K) as compared to their room temperature (300 K) performance. The operation of integrated circuits at cryogenic temperatures results in an improved performance in terms of increased speed, reduced latch-up susceptibility, reduced leakage current, and reduced thermal noise. However, the switching noise increased at 77 K compared to 300 K. The power control circuits tested in the laboratory did successfully restart at 77 K.

A high performance transparent resistive switching memory made from ZrO{sub 2}/AlON bilayer structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsai, Tsung-Ling; Chang, Hsiang-Yu; Tseng, Tseung-Yuen, E-mail: tseng@cc.nctu.edu.tw

2016-04-11

In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO{sub 2})/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO{sub 2}/ITO single layer device, the ITO/ZrO{sub 2}/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by formingmore » an asymmetrical conductive filament with the weakest part at the ZrO{sub 2}/AlON interface. Therefore, in the ITO/ZrO{sub 2}/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.« less

Quantitative analysis of retinoids in biological fluids by high-performance liquid chromatography using column switching. I. Determination of isotretinoin and tretinoin and their 4-oxo metabolites in plasma.

PubMed

Wyss, R; Bucheli, F

1988-02-26

A fully automated gradient high-performance liquid chromatographic method for the determination of isotretinoin, tretinoin and their 4-oxo metabolites in plasma was developed, using the column-switching technique. After dilution with an internal standard solution containing 20% acetonitrile, 0.5 ml of the sample was injected onto a precolumn (17 X 4.6 mm I.D.), filled with C18 Corasil 37-53 micron. Proteins and polar plasma components were washed out using 1% ammonium acetate-acetonitrile (9:1, v/v) as mobile phase 1. After valve switching, the retained components were transferred to the analytical column in the backflush mode, separated by gradient elution and detected at 360 nm by UV detection. Using two coupled reversed-phase columns (125 mm long), the separation of cis and trans isomers was possible, and all four compounds could be quantified down to 2 ng/ml of plasma. The inter-assay precision in the concentration range 20-100 ng/ml was between 1.0 and 4.7% for all compounds.

K-band high power latching switch. [communication satellite system

NASA Technical Reports Server (NTRS)

Mlinar, M. J.; Piotrowski, W. S.; Raue, J. E.

1980-01-01

A 19 GHz waveguide latching switch with a bandwidth of 1400 MHz and an exceptionally low insertion loss of 0.25 dB was demonstrated. The RF and driver ferrites are separate structures and can be optimized individually. This analysis for each structure is separately detailed. Basically, the RF section features a dual turnstile junction. The circulator consists of a dielectric tube which contains two ferrite rods, and a dielectric spacer separating the ferrite parts along the center of symmetry of the waveguide to form two turnstiles. This subassembly is indexed and locked in the center of symmetry of a uniform junction of three waveguides by the metallic transformers installed in the top and bottom walls of the housing. The switching junction and its actuating circuitry met all RF performance objectives and all shock and vibration requirements with no physical damage or performance degradation. It exceeds thermal requirements by operating over a 100 C temperature range (-44 C to +56 C) and has a high power handling capability allowing up to 100 W of CW input power.

Micromachined mirrors for raster-scanning displays and optical fiber switches

NASA Astrophysics Data System (ADS)

Hagelin, Paul Merritt

Micromachines and micro-optics have the potential to shrink the size and cost of free-space optical systems, enabling a new generation of high-performance, compact projection displays and telecommunications equipment. In raster-scanning displays and optical fiber switches, a free-space optical beam can interact with multiple tilt- up micromirrors fabricated on a single substrate. The size, rotation angle, and flatness of the mirror surfaces determine the number of pixels in a raster-display or ports in an optical switch. Single-chip and two-chip optical raster display systems demonstrate static mirror curvature correction, an integrated electronic driver board, and dynamic micromirror performance. Correction for curvature caused by a stress gradient in the micromirror leads to resolution of 102 by 119 pixels in the single-chip display. The optical design of the two-chip display features in-situ mirror curvature measurement and adjustable image magnification with a single output lens. An electronic driver board synchronizes modulation of the optical source with micromirror actuation for the display of images. Dynamic off-axis mirror motion is shown to have minimal influence on resolution. The confocal switch, a free-space optical fiber cross- connect, incorporates micromirrors having a design similar to the image-refresh scanner. Two micromirror arrays redirect optical beams from an input fiber array to the output fibers. The switch architecture supports simultaneous switching of multiple wavelength channels. A 2x2 switch configuration, using single-mode optical fiber at 1550 mn, is demonstrated with insertion loss of -4.2 dB and cross-talk of -50.5 dB. The micromirrors have sufficient size and angular range for scaling to a 32x32 cross-connect switch that has low insertion-loss and low cross-talk.

Performance analysis of cascaded h-bridge multilevel inverter using mixed switching frequency with various dc-link voltages

NASA Astrophysics Data System (ADS)

Citarsa, I. B. F.; Satiawan, I. N. W.; Wiryajati, I. K.; Supriono

2016-01-01

Multilevel inverters have been widely used in many applications since the technology is advantageous to increase the converter capability as well as to improve the output voltage quality. According to the applied switching frequency, multilevel modulations can be subdivided into three classes, i.e: fundamental switching frequency, high switching frequency and mixed switching frequency. This paper investigates the performance of cascaded H-bridge (CHB) multilevel inverter that is modulated using mixed switching frequency (MSF) PWM with various dc-link voltage ratios. The simulation results show the nearly sinusoidal load output voltages are successfully achieved. It is revealed that there is improvement in output voltages quality in terms of THD and low-order harmonics content. The CHB inverter that is modulated using MSF PWM with equal dc-link voltage ratio (½ Vdc: ½ Vdc) produces output voltage with the lowest low-order harmonics (less than 1% of fundamental) while the CHB inverter that is modulated using MSF PWM with un-equal dc-link voltage ratio (2/3 Vdc: 1/3 Vdc) produces a 7-level output voltage with the lowest THD (16.31%) compared to the other PWM methods. Improvement of the output voltage quality here is also in line with improvement of the number of available levels provided in the output voltage. Here only 2 cells H-bridge inverter (contain 8 switches) are needed to produce a 7- level output voltage, while in the conventional CHB inverter at least 3 cells of H-bridge inverter (contain 12 switches) are needed to produce a 7-level output voltage. Hence it is valuable in term of saving number of component.

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

PubMed Central

Lanza, Mario

2014-01-01

Metal-Insulator-Metal (MIM) structures have raised as the most promising configuration for next generation information storage, leading to great performance and fabrication-friendly Resistive Random Access Memories (RRAM). In these cells, the memory concept is no more based on the charge storage, but on tuning the electrical resistance of the insulating layer by applying electrical stresses to reach a high resistive state (HRS or “0”) and a low resistive state (LRS or “1”), which makes the memory point. Some high-k dielectrics show this unusual property and in the last years high-k based RRAM have been extensively analyzed, especially at the device level. However, as resistance switching (in the most promising cells) is a local phenomenon that takes place in areas of ~100 nm2, the use of characterization tools with high lateral spatial resolution is necessary. In this paper the status of resistive switching in high-k materials is reviewed from a nanoscale point of view by means of conductive atomic force microscope analyses. PMID:28788561

Cognitive Control Signals in Posterior Cingulate Cortex

PubMed Central

Hayden, Benjamin Y.; Smith, David V.; Platt, Michael L.

2010-01-01

Efficiently shifting between tasks is a central function of cognitive control. The role of the default network – a constellation of areas with high baseline activity that declines during task performance – in cognitive control remains poorly understood. We hypothesized that task switching demands cognitive control to shift the balance of processing toward the external world, and therefore predicted that switching between the two tasks would require suppression of activity of neurons within the posterior cingulate cortex (CGp). To test this idea, we recorded the activity of single neurons in CGp, a central node in the default network, in monkeys performing two interleaved tasks. As predicted, we found that basal levels of neuronal activity were reduced following a switch from one task to another and gradually returned to pre-switch baseline on subsequent trials. We failed to observe these effects in lateral intraparietal cortex, part of the dorsal fronto-parietal cortical attention network directly connected to CGp. These findings indicate that suppression of neuronal activity in CGp facilitates cognitive control, and suggest that activity in the default network reflects processes that directly compete with control processes elsewhere in the brain. PMID:21160560

New scheme for image edge detection using the switching mechanism of nonlinear optical material

NASA Astrophysics Data System (ADS)

Pahari, Nirmalya; Mukhopadhyay, Sourangshu

2006-03-01

The limitations of electronics in conducting parallel arithmetic, algebraic, and logic processing are well known. Very high-speed (terahertz) performance cannot be expected in conventional electronic mechanisms. To achieve such performance we can introduce optics instead of electronics for information processing, computing, and data handling. Nonlinear optical material (NOM) is a successful candidate in this regard to play a major role in the domain of optically controlled switching systems. The character of some NOMs is such as to reflect the probe beam in the presence of two read beams (or pump beams) exciting the material from opposite directions, using the principle of four-wave mixing. In image processing, edge extraction from an image is an important and essential task. Several optical methods of digital image processing are used for properly evaluating the image edges. We propose here a new method of image edge detection, extraction, and enhancement by use of AND-based switching operations with NOM. In this process we have used the optically inverted image of a supplied image. This can be obtained by the EXOR switching operation of the NOM.

Multi-Billion Shot, High-Fluence Exposure of Cr(4+): YAG Passive Q-Switch

NASA Technical Reports Server (NTRS)

Stephen, Mark A.; Dallas, Joseph L.; Afzal, Robert S.

1997-01-01

NASA's Goddard Space Flight Center is developing the Geoscience Laser Altimeter System (GLAS) employing a diode pumped, Q-Switched, ND:YAG laser operating at 40 Hz repetition rate. To meet the five-year mission lifetime goal, a single transmitter would accumulate over 6.3 billion shots. Cr(4+):YAG is a promising candidate material for passively Q-switching the laser. Historically, the performance of saturable absorbers has degraded over long-duration usage. To measure the multi-billion shot performance of Cr(4+):YAG, a passively Q-switched GLAS-like oscillator was tested at an accelerated repetition rate of 500 Hz. The intracavity fluence was calculated to be approximately 2.5 J/cm(exp 2). The laser was monitored autonomously for 165 days. There was no evidence of change in the material optical properties during the 7.2 billion shot test.. All observed changes in laser operation could be attributed to pump laser diode aging. This is the first demonstration of multi-billion shot exposure testing of Cr(4+):YAG in this pulse energy regime

Modeling Task Switching without Switching Tasks: A Short-Term Priming Account of Explicitly Cued Performance

ERIC Educational Resources Information Center

Schneider, Darryl W.; Logan, Gordon D.

2005-01-01

Switch costs in task switching are commonly attributed to an executive control process of task-set reconfiguration, particularly in studies involving the explicit task-cuing procedure. The authors propose an alternative account of explicitly cued performance that is based on 2 mechanisms: priming of cue encoding from residual activation of cues in…

Self-Paced Preparation for a Task Switch Eliminates Attentional Inertia but Not the Performance Switch Cost

ERIC Educational Resources Information Center

Longman, Cai S.; Lavric, Aureliu; Monsell, Stephen

2017-01-01

The performance overhead associated with changing tasks (the "switch cost") usually diminishes when the task is specified in advance but is rarely eliminated by preparation. A popular account of the "residual" (asymptotic) switch cost is that it reflects "task-set inertia": carry-over of task-set parameters from the…

Theoretical and experimental investigations on high peak power Q-switched Nd:YAG laser at 1112 nm

NASA Astrophysics Data System (ADS)

He, Miao; Yang, Feng; Wang, Zhi-Chao; Gao, Hong-Wei; Yuan, Lei; Li, Chen-Long; Zong, Nan; Shen, Yu; Bo, Yong; Peng, Qin-Jun; Cui, Da-Fu; Xu, Zu-Yan

2018-07-01

We report on the experimental measurement and theoretical analysis on a Q-switched high peak power laser diode (LD) side-pumped 1112 nm Nd:YAG laser by means of special mirrors coating design in cavity. In theory, a numerical model, based on four-wavelength rate equations, is performed to analyze the competition process of different gain lines and the output characteristics of the Q-switched Nd:YAG laser. In the experiment, a maximum output power of 25.2 W with beam quality factor M2 of 1.46 is obtained at the pulse repetition rate of 2 kHz and 210 ns of pulse width, corresponding to a pulse energy and peak power of 12.6 mJ and 60 kW, respectively. The experimental data agree well with the theoretical simulation results.

High-temperature brushless DC motor controller

DOEpatents

Cieslewski, Crzegorz; Lindblom, Scott C.; Maldonado, Frank J.; Eckert, Michael Nathan

2017-05-16

A motor control system for deployment in high temperature environments includes a controller; a first half-bridge circuit that includes a first high-side switching element and a first low-side switching element; a second half-bridge circuit that includes a second high-side switching element and a second low-side switching element; and a third half-bridge circuit that includes a third high-side switching element and a third; low-side switching element. The motor controller is arranged to apply a pulse width modulation (PWM) scheme to switch the first half-bridge circuit, second half-bridge circuit, and third half-bridge circuit to power a motor.

Optical burst switching for the next generation Optical Internet

NASA Astrophysics Data System (ADS)

Yoo, Myungsik

2000-11-01

In recent years, Internet Protocol (IP) over Wavelength Division Multiplexing (WDM) networks for the next generation Internet (or the so-called Optical Internet) have received enormous attention. There are two main drivers for an Optical Internet. One is the explosion of Internet traffic, which seems to keep growing exponentially. The other driver is the rapid advance in the WDM optical networking technology. In this study, key issues in the optical (WDM) layer will be investigated. As a novel switching paradigm for Optical Internet, Optical Burst Switching (OBS) is discussed. By leveraging the attractive properties of optical communications and at the same time, taking into account its limitations, OBS can combine the best of optical circuit-switching and packet/cell switching. The general concept of JET-based OBS protocol is described, including offset time and delayed reservation. In the next generation Optical Internet, one must address how to support Quality of Service (QoS) at the WDM layer since current IP provides only best effort services. The offset-time- based QoS scheme is proposed as a way of supporting QoS at the WDM layer. Unlike existing QoS schemes, offset- time-based QoS scheme does not mandate the use of buffer to differentiate services. For the bufferless WDM switch, the performance of offset- time-based QoS scheme is evaluated in term of blocking probability. In addition, the extra offset time required for class isolation is quantified and the theoretical bounds on blocking probability are analyzed. The offset-time-based scheme is applied to WDM switch with limited fiber delay line (FDL) buffer. We evaluate the effect of having a FDL buffer on the QoS performance of the offset-time-based scheme in terms of the loss probability and queuing delay of bursts. Finally, in order to dimension the network resources in Optical Internet backbone networks, the performance of the offset-time-based QoS scheme is evaluated for the multi-hop case. In particular, we consider very high performance Backbone Network Service (vBNS) backbone network. Various policies such as drop, retransmission, deflection routing and buffering are considered for performance evaluation. The performance results obtained under these policies are compared to decide the most efficient policy for the WDM backbone network.

A low insertion loss GaAs pHEMT switch utilizing dual n +-doping AlAs etching stop layers design

NASA Astrophysics Data System (ADS)

Chien, Feng-Tso; Lin, Da-Wei; Yang, Chih-Wei; Fu, Jeffrey S.; Chiu, Hsien-Chin

2010-03-01

A low insertion loss single-pole-single-throw (SPST) pseudomorphic high electron mobility transistor (pHEMT) switch utilizing the n +-type doping in AlAs etching stop layer was fabricated and investigated. This novel design reduces device sheet resistance resulting in an improvement of dc and rf power performance. In addition, the gate recess selectivity for GaAs/AlAs interface was not sacrificed after highly n +-type doping in AlAs etching stop layer. The pHEMT with n +-AlAs etching stop layer, also named Modified pHEMT (M-pHEMT), demonstrated a lower sheet resistance ( Rsh) of 65.9 Ω/γ, a higher maximum drain-to-source current ( Idmax) of 317.8 mA/mm and a higher peak transconductance ( gm) of 259.3 mS/mm which are superior to standard pHEMT performance with values of 71.9 Ω/γ, 290.3 mA/mm and 252.1 mS/mm, respectively. Due to a significant sheet resistance improvement from this novel epitaxial design, an SPST pHEMT switch was realized to manifest its industrial application potential. The results achieved an on-state insertion loss of 1.42 dB, an off-state isolation of 13.02 dB at 0.9 GHz, which were superior to traditional pHEMT switch under same condition of operation with values of 1.68 dB and 11.42 dB, respectively. It is proved that dual n +-doping AlAs etching stop layers scheme is beneficial for low loss microwave switches applications.

Quinary excitation method for pulse compression ultrasound measurements.

PubMed

Cowell, D M J; Freear, S

2008-04-01

A novel switched excitation method for linear frequency modulated excitation of ultrasonic transducers in pulse compression systems is presented that is simple to realise, yet provides reduced signal sidelobes at the output of the matched filter compared to bipolar pseudo-chirp excitation. Pulse compression signal sidelobes are reduced through the use of simple amplitude tapering at the beginning and end of the excitation duration. Amplitude tapering using switched excitation is realised through the use of intermediate voltage switching levels, half that of the main excitation voltages. In total five excitation voltages are used creating a quinary excitation system. The absence of analogue signal generation and power amplifiers renders the excitation method attractive for applications with requirements such as a high channel count or low cost per channel. A systematic study of switched linear frequency modulated excitation methods with simulated and laboratory based experimental verification is presented for 2.25 MHz non-destructive testing immersion transducers. The signal to sidelobe noise level of compressed waveforms generated using quinary and bipolar pseudo-chirp excitation are investigated for transmission through a 0.5m water and kaolin slurry channel. Quinary linear frequency modulated excitation consistently reduces signal sidelobe power compared to bipolar excitation methods. Experimental results for transmission between two 2.25 MHz transducers separated by a 0.5m channel of water and 5% kaolin suspension shows improvements in signal to sidelobe noise power in the order of 7-8 dB. The reported quinary switched method for linear frequency modulated excitation provides improved performance compared to pseudo-chirp excitation without the need for high performance excitation amplifiers.

High Efficiency Photonic Switch for Data Centers

DOE Office of Scientific and Technical Information (OSTI.GOV)

LaComb, Lloyd J.; Bablumyan, Arkady; Ordyan, Armen

2016-12-06

The worldwide demand for instant access to information is driving internet growth rates above 50% annually. This rapid growth is straining the resources and architectures of existing data centers, metro networks and high performance computer centers. If the current business as usual model continues, data centers alone will require 400TWhr of electricity by 2020. In order to meet the challenges of a faster and more cost effective data centers, metro networks and supercomputing facilities, we have demonstrated a new type of optical switch that will support transmissions speeds up to 1Tb/s, and requires significantly less energy per bit than

Fringe field switching AMLCD technology in military and consumer applications

NASA Astrophysics Data System (ADS)

Niemczyk, James

2006-05-01

American Panel Corporation (APC) designs and delivers customized AMLCD products for aircraft cockpits and rugged ground vehicles. APC specifies AMLCD's to be designed and manufactured, based on an exclusive relationship, with both LG.Philips LCD, in South Korea and BOE Hydis, in South Korea. This paper addresses the Fringe Field Switching (FFS) technology developed by BOE Hydis and APC's customization of this technology into both high end avionics display products as well as consumer display products. FFS technology optimizes all optical and electrical performance qualities into a single product. APC offers the high temperature FFS products for all applications.

Perceptual switch rates with ambiguous structure-from-motion figures in bipolar disorder.

PubMed

Krug, Kristine; Brunskill, Emma; Scarna, Antonina; Goodwin, Guy M; Parker, Andrew J

2008-08-22

Slowing of the rate at which a rivalrous percept switches from one configuration to another has been suggested as a potential trait marker for bipolar disorder. We measured perceptual alternations for a bistable, rotating, structure-from-motion cylinder in bipolar and control participants. In a control task, binocular depth rendered the direction of cylinder rotation unambiguous to monitor participants' performance and attention during the experimental task. A particular direction of rotation was perceptually stable, on average, for 33.5s in participants without psychiatric diagnosis. Euthymic, bipolar participants showed a slightly slower rate of switching between the two percepts (percept duration 42.3s). Under a parametric analysis of the best-fitting model for individual participants, this difference was statistically significant. However, the variability within groups was high, so this difference in average switch rates was not big enough to serve as a trait marker for bipolar disorder. We also found that low-level visual capacities, such as stereo threshold, influence perceptual switch rates. We suggest that there is no single brain location responsible for perceptual switching in all different ambiguous figures and that perceptual switching is generated by the actions of local cortical circuitry.

Ribozyme-based aminoglycoside switches of gene expression engineered by genetic selection in S. cerevisiae.

PubMed

Klauser, Benedikt; Atanasov, Janina; Siewert, Lena K; Hartig, Jörg S

2015-05-15

Systems for conditional gene expression are powerful tools in basic research as well as in biotechnology. For future applications, it is of great importance to engineer orthogonal genetic switches that function reliably in diverse contexts. RNA-based switches have the advantage that effector molecules interact immediately with regulatory modules inserted into the target RNAs, getting rid of the need of transcription factors usually mediating genetic control. Artificial riboswitches are characterized by their simplicity and small size accompanied by a high degree of modularity. We have recently reported a series of hammerhead ribozyme-based artificial riboswitches that allow for post-transcriptional regulation of gene expression via switching mRNA, tRNA, or rRNA functions. A more widespread application was so far hampered by moderate switching performances and a limited set of effector molecules available. Here, we report the re-engineering of hammerhead ribozymes in order to respond efficiently to aminoglycoside antibiotics. We first established an in vivo selection protocol in Saccharomyces cerevisiae that enabled us to search large sequence spaces for optimized switches. We then envisioned and characterized a novel strategy of attaching the aptamer to the ribozyme catalytic core, increasing the design options for rendering the ribozyme ligand-dependent. These innovations enabled the development of neomycin-dependent RNA modules that switch gene expression up to 25-fold. The presented aminoglycoside-responsive riboswitches belong to the best-performing RNA-based genetic regulators reported so far. The developed in vivo selection protocol should allow for sampling of large sequence spaces for engineering of further optimized riboswitches.

Determination of N-(trans-4-isopropylcyclohexylcarbonyl)-D-phenylalanine in human plasma by solid-phase extraction and column-switching high-performance liquid chromatography with ultraviolet detection.

PubMed

Ono, I; Matsuda, K; Kanno, S

1996-04-12

A column-switching high-performance liquid chromatography method with ultraviolet detection at 210 nm has been developed for the determination of N-(trans-4-isopropylcyclohexylcarbonyl)-D-phenylalanine (AY4166, I) in human plasma. Plasma samples were prepared by solid-phase extraction with Sep-Pak Light tC18, followed by HPLC. The calibration graph for I was linear in the range 0.1-20 micrograms/ml. The limit of quantitation of I, in plasma, was 0.05 microgram/ml. The recovery of spiked I (0.5 microgram/ml) to drug-free plasma was over 92% and the relative standard deviation of spiked I (0.5 microgram/ml) compared to drug-free plasma was 4.3% (n = 8).

A robust low-rate coding scheme for packet video

NASA Technical Reports Server (NTRS)

Chen, Y. C.; Sayood, Khalid; Nelson, D. J.; Arikan, E. (Editor)

1991-01-01

Due to the rapidly evolving field of image processing and networking, video information promises to be an important part of telecommunication systems. Although up to now video transmission has been transported mainly over circuit-switched networks, it is likely that packet-switched networks will dominate the communication world in the near future. Asynchronous transfer mode (ATM) techniques in broadband-ISDN can provide a flexible, independent and high performance environment for video communication. For this paper, the network simulator was used only as a channel in this simulation. Mixture blocking coding with progressive transmission (MBCPT) has been investigated for use over packet networks and has been found to provide high compression rate with good visual performance, robustness to packet loss, tractable integration with network mechanics and simplicity in parallel implementation.

The double switch for atrioventricular discordance.

PubMed

Brawn, William J

2005-01-01

Conventional surgery for atrioventricular discordance usually associated with ventricular arterial discordance leaves the morphologic right ventricle in the systemic circulation. Long-term follow-up results with this approach reveal a high incidence of right ventricular failure. The double switch procedure was introduced to restore the morphologic left ventricle to the systemic circulation. This operation is performed in two main ways: the atrial-arterial switch and the atrial switch plus Rastelli procedure. This double switch approach has been successful at least in the medium term in abolishing morphologic right ventricular failure and its associated tricuspid valve regurgitation. In the atrial-arterial switch group, there is an incidence of morphologic left ventricular dysfunction, sometimes associated with neoaortic valve regurgitation, and the minority of cases need aortic valve replacement. The long-term function of the morphologic left ventricle and the aortic valve need careful surveillance in the future. The atrial-Rastelli group of patients has not in the medium term shown evidence of ventricular dysfunction but will require change on a regular basis of their ventricular to pulmonary artery valved conduits.

Impact of ultra-thin Al2O3-y layers on TiO2-x ReRAM switching characteristics

NASA Astrophysics Data System (ADS)

Trapatseli, Maria; Cortese, Simone; Serb, Alexander; Khiat, Ali; Prodromakis, Themistoklis

2017-05-01

Transition metal-oxide resistive random access memory devices have demonstrated excellent performance in switching speed, versatility of switching and low-power operation. However, this technology still faces challenges like poor cycling endurance, degradation due to high electroforming (EF) switching voltages and low yields. Approaches such as engineering of the active layer by doping or addition of thin oxide buffer layers have been often adopted to tackle these problems. Here, we have followed a strategy that combines the two; we have used ultra-thin Al2O3-y buffer layers incorporated between TiO2-x thin films taking into account both 3+/4+ oxidation states of Al/Ti cations. Our devices were tested by DC and pulsed voltage sweeping and in both cases demonstrated improved switching voltages. We believe that the Al2O3-y layers act as reservoirs of oxygen vacancies which are injected during EF, facilitate a filamentary switching mechanism and provide enhanced filament stability, as shown by the cycling endurance measurements.

Cognitive caching promotes flexibility in task switching: evidence from event-related potentials.

PubMed

Lange, Florian; Seer, Caroline; Müller, Dorothea; Kopp, Bruno

2015-12-08

Time-consuming processes of task-set reconfiguration have been shown to contribute to the costs of switching between cognitive tasks. We describe and probe a novel mechanism serving to reduce the costs of task-set reconfiguration. We propose that when individuals are uncertain about the currently valid task, one task set is activated for execution while other task sets are maintained at a pre-active state in cognitive cache. We tested this idea by assessing an event-related potential (ERP) index of task-set reconfiguration in a three-rule task-switching paradigm involving varying degrees of task uncertainty. In high-uncertainty conditions, two viable tasks were equally likely to be correct whereas in low-uncertainty conditions, one task was more likely than the other. ERP and performance measures indicated substantial costs of task-set reconfiguration when participants were required to switch away from a task that had been likely to be correct. In contrast, task-set-reconfiguration costs were markedly reduced when the previous task set was chosen under high task uncertainty. These results suggest that cognitive caching of alternative task sets adds to human cognitive flexibility under high task uncertainty.

Cognitive caching promotes flexibility in task switching: evidence from event-related potentials

PubMed Central

Lange, Florian; Seer, Caroline; Müller, Dorothea; Kopp, Bruno

2015-01-01

Time-consuming processes of task-set reconfiguration have been shown to contribute to the costs of switching between cognitive tasks. We describe and probe a novel mechanism serving to reduce the costs of task-set reconfiguration. We propose that when individuals are uncertain about the currently valid task, one task set is activated for execution while other task sets are maintained at a pre-active state in cognitive cache. We tested this idea by assessing an event-related potential (ERP) index of task-set reconfiguration in a three-rule task-switching paradigm involving varying degrees of task uncertainty. In high-uncertainty conditions, two viable tasks were equally likely to be correct whereas in low-uncertainty conditions, one task was more likely than the other. ERP and performance measures indicated substantial costs of task-set reconfiguration when participants were required to switch away from a task that had been likely to be correct. In contrast, task-set-reconfiguration costs were markedly reduced when the previous task set was chosen under high task uncertainty. These results suggest that cognitive caching of alternative task sets adds to human cognitive flexibility under high task uncertainty. PMID:26643146

Determination of highly protein bound drugs in plasma using high-performance liquid chromatography and column switching, exemplified by the retinoids.

PubMed

Wyss, R; Bucheli, F

1988-12-02

During method development for the determination of either isotretinoin, tretinoin and their 4-oxo-metabolites, or etretinate, acitretin and 13-cis-acitretin in plasma using high-performance liquid chromatography and column switching, recovery problems arose, when undiluted plasma samples were injected directly onto the precolumn. These recovery problems may be due to the strong binding of the retinoids to different plasma proteins. Measures to overcome this strong protein binding, such as variation of the injection solution composition and the purge mobile phase, were systematically investigated. Best recoveries were obtained by diluting of plasma with 9 mM sodium hydroxide-acetonitrile (8:2, v/v) and protein precipitation with ethanol for the isotretinoin and etretinate series, respectively, in combination with the use of a purge mobile phase containing ammonium acetate and 10-20% acetonitrile. Less effective was the use of a longer precolumn or heating of the precolumn.

Determination of active components of Ginkgo biloba in human urine by capillary high-performance liquid chromatography/mass spectrometry with on-line column-switching purification.

PubMed

Ding, Shujing; Dudley, Ed; Chen, Lijuan; Plummer, Sue; Tang, Jiandong; Newton, Russell P; Brenton, A Gareth

2006-01-01

Ginkgo biloba is one of the most popular herbal nutritional supplements, with terpene lactones and flavonoids being the two major active components. An on-line purification high-performance liquid chromatography/mass spectrometry (HPLC/MS) method was successfully developed for the quantitative determination of flavonoids and terpene lactones excreted in human urine after ingesting the herbal supplement. Satisfactory separation was obtained using a C18 capillary column made in-house with sample clean-up and pre-concentration achieved using a C18 pre-column with column switching. High selectivity and limits of detection of 1-18 ng/mL were achieved using a selected ion monitoring (SIM) scan in negative ion mode; the on-line solid-phase extraction (SPE) recovery of the active components in Ginkgo biloba determined in this study was greater than 75%. Copyright 2006 John Wiley & Sons, Ltd.

Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures

PubMed Central

Yan, Z. B.; Liu, J. -M.

2013-01-01

The Au/DyMnO3/Nb:SrTiO3/Au stack was demonstrated to be not only a high performance memristor but also a good memcapacitor. The switching time is below 10 ns, the retention is longer than 105 s, and the change ratio of resistance (or capacitance) is larger than 100 over the 108 switching cycles. Moreover, this stack has a broad range of intermediate states that are tunable by the operating voltages. It is indicated that the memory effects originate from the Nb:SrTiO3/Au junction where the barrier profile is electrically modulated. The serial connected Au/DyMnO3/Nb:SrTiO3 stack behaves as a high nonlinear resistor paralleling with a capacitor, which raises the capacitance change ratio and enhances the memory stability of the device. PMID:23963467

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duan, Sisi; Li, Yun; Levitt, Karl N.

Consensus is a fundamental approach to implementing fault-tolerant services through replication where there exists a tradeoff between the cost and the resilience. For instance, Crash Fault Tolerant (CFT) protocols have a low cost but can only handle crash failures while Byzantine Fault Tolerant (BFT) protocols handle arbitrary failures but have a higher cost. Hybrid protocols enjoy the benefits of both high performance without failures and high resiliency under failures by switching among different subprotocols. However, it is challenging to determine which subprotocols should be used. We propose a moving target approach to switch among protocols according to the existing systemmore » and network vulnerability. At the core of our approach is a formalized cost model that evaluates the vulnerability and performance of consensus protocols based on real-time Intrusion Detection System (IDS) signals. Based on the evaluation results, we demonstrate that a safe, cheap, and unpredictable protocol is always used and a high IDS error rate can be tolerated.« less

An Alternative to the Stay/Switch Equation Assessed When Using a Changeover-Delay

PubMed Central

MacDonall, James S.

2015-01-01

An alternative to the generalized matching equation for understanding concurrent performances is the stay/switch model. For the stay/switch model, the important events are the contingencies and behaviors at each alternative. The current experiment compares the descriptions by two stay/switch equations, the original, empirically derived stay/switch equation and a more theoretically derived equation based on ratios of stay to switch responses matching ratios of stay to switch reinforcers. The present experiment compared descriptions by the original stay/switch equation when using and not using a changeover delay. It also compared descriptions by the more theoretical equation with and without a changeover delay. Finally, it compared descriptions of the concurrent performances by these two equations. Rats were trained in 15 conditions on identical concurrent random-interval schedules in each component of a multiple schedule. A COD operated in only one component. There were no consistent differences in the variance accounted for by each equation of concurrent performances whether or not a COD was used. The simpler equation found greater sensitivity to stay than to switch reinforcers. It also found a COD eliminated the influence of switch reinforcers. Because estimates of parameters were more meaningful when using the more theoretical stay/switch equation it is preferred. PMID:26299548

An alternative to the stay/switch equation assessed when using a changeover-delay.

PubMed

MacDonall, James S

2015-11-01

An alternative to the generalized matching equation for understanding concurrent performances is the stay/switch model. For the stay/switch model, the important events are the contingencies and behaviors at each alternative. The current experiment compares the descriptions by two stay/switch equations, the original, empirically derived stay/switch equation and a more theoretically derived equation based on ratios of stay to switch responses matching ratios of stay to switch reinforcers. The present experiment compared descriptions by the original stay/switch equation when using and not using a changeover delay. It also compared descriptions by the more theoretical equation with and without a changeover delay. Finally, it compared descriptions of the concurrent performances by these two equations. Rats were trained in 15 conditions on identical concurrent random-interval schedules in each component of a multiple schedule. A COD operated in only one component. There were no consistent differences in the variance accounted for by each equation of concurrent performances whether or not a COD was used. The simpler equation found greater sensitivity to stay than to switch reinforcers. It also found a COD eliminated the influence of switch reinforcers. Because estimates of parameters were more meaningful when using the more theoretical stay/switch equation it is preferred. Copyright © 2015 Elsevier B.V. All rights reserved.

Nutating subreflector for a millimeter wave telescope

NASA Astrophysics Data System (ADS)

Radford, Simon J. E.; Boynton, Paul; Melchiorri, Francesco

1990-03-01

Nutating a Cassegrain telescope's secondary mirror is a convenient method of steering the telescope beam through a small angle. This principle has been used to construct a high-performance beam switch for a millimeter wave telescope. A low mass, graphite-epoxy laminate secondary mirror is driven by linear electric motors operated in a frequency compensated control loop. By design, the nutator exerts little net oscillating torque on the telescope structure, resulting in virtually vibration free operation. The inherent versatility of beam switching by subreflector nutation permits a variety of switching waveforms to be tested without making any hardware changes. The nutator can shift the telescope beam by 10 arcminutes, a 1.25 deg rotation of the 75-cm-diam secondary mirror, in an interval of 8 ms and it can sustain a switching frequency of 10 Hz.

GLOBECOM '88 - IEEE Global Telecommunications Conference and Exhibition, Hollywood, FL, Nov. 28-Dec. 1, 1988, Conference Record. Volumes 1, 2, & 3

NASA Astrophysics Data System (ADS)

Various papers on communications for the information age are presented. Among the general topics considered are: telematic services and terminals, satellite communications, telecommunications mangaement network, control of integrated broadband networks, advances in digital radio systems, the intelligent network, broadband networks and services deployment, future switch architectures, performance analysis of computer networks, advances in spread spectrum, optical high-speed LANs, and broadband switching and networks. Also addressed are: multiple access protocols, video coding techniques, modulation and coding, photonic switching, SONET terminals and applications, standards for video coding, digital switching, progress in MANs, mobile and portable radio, software design for improved maintainability, multipath propagation and advanced countermeasure, data communication, network control and management, fiber in the loop, network algorithm and protocols, and advances in computer communications.

High performace silicon 2x2 optical switch based on a thermo-optically tunable multimode interference coupler and efficient electrodes.

PubMed

Rosa, Álvaro; Gutiérrez, Ana; Brimont, Antoine; Griol, Amadeu; Sanchis, Pablo

2016-01-11

Optical switches based on tunable multimode interference (MMI) couplers can simultaneously reduce the footprint and increase the tolerance against fabrication deviations. Here, a compact 2x2 silicon switch based on a thermo-optically tunable MMI structure with a footprint of only 0.005 mm(2) is proposed and demonstrated. The MMI structure has been optimized using a silica trench acting as a thermal isolator without introducing any substantial loss penalty or crosstalk degradation. Furthermore, the electrodes performance have significantly been improved via engineering the heater geometry and using two metallization steps. Thereby, a drastic power consumption reduction of around 90% has been demonstrated yielding to values as low as 24.9 mW. Furthermore, very fast switching times of only 1.19 µs have also been achieved.

Direct Observation of Conducting Filaments in Tungsten Oxide Based Transparent Resistive Switching Memory.

PubMed

Qian, Kai; Cai, Guofa; Nguyen, Viet Cuong; Chen, Tupei; Lee, Pooi See

2016-10-05

Transparent nonvolatile memory has great potential in integrated transparent electronics. Here, we present highly transparent resistive switching memory using stoichiometric WO 3 film produced by cathodic electrodeposition with indium tin oxide electrodes. The memory device demonstrates good optical transmittance, excellent operative uniformity, low operating voltages (+0.25 V/-0.42 V), and long retention time (>10 4 s). Conductive atomic force microscopy, ex situ transmission electron microscopy, and X-ray photoelectron spectroscopy experiments directly confirm that the resistive switching effects occur due to the electric field-induced formation and annihilation of the tungsten-rich conductive channel between two electrodes. Information on the physical and chemical nature of conductive filaments offers insightful design strategies for resistive switching memories with excellent performances. Moreover, we demonstrate the promising applicability of the cathodic electrodeposition method for future resistive memory devices.

Low-Crosstalk Composite Optical Crosspoint Switches

NASA Technical Reports Server (NTRS)

Pan, Jing-Jong; Liang, Frank

1993-01-01

Composite optical switch includes two elementary optical switches in tandem, plus optical absorbers. Like elementary optical switches, composite optical switches assembled into switch matrix. Performance enhanced by increasing number of elementary switches. Advantage of concept: crosstalk reduced to acceptably low level at moderate cost of doubling number of elementary switches rather than at greater cost of tightening manufacturing tolerances and exerting more-precise control over operating conditions.

Asymmetrical Switch Costs in Children

ERIC Educational Resources Information Center

Ellefson, Michelle R.; Shapiron, Laura R.; Chater, Nick

2006-01-01

Switching between tasks produces decreases in performance as compared to repeating the same task. Asymmetrical switch costs occur when switching between two tasks of unequal difficulty. This asymmetry occurs because the cost is greater when switching to the less difficult task than when switching to the more difficult task. Various theories about…

Moving Beyond 3D Hetero-Integration and Towards Monolithic Integration of Phase-Change RF Switches with SiGe BiCMOS

DTIC Science & Technology

2016-03-31

Corporation, Linthicum, Maryland *Corresponding author: Pavel.Borodulin@ngc.com Abstract: A chip -scale, highly-reconfigurable transmitter and...the technology has been used in a chip -scale, reconfigurable receiver demonstration and ongoing efforts to increase the level of performance and...circuit (RF-FPGA). It consists of a heterogeneous assembly of a SiGe BiCMOS chip with multiple 3D-integrated, low-loss, phase-change switch chiplets

Low jitter, low inductance solid dielectric switches.

PubMed

Guenther, A H; Strickland, D M; Bettis, J R

1979-11-01

It has been shown that the use of graded solid dielectric sandwiches in laser-triggered spark gaps (LTS) can lead to highly desirable multichannel operations while maintaining the low delay and jitter performance characteristics of LTS. As many as ten separate breakdown channels were observed when small circular or hexagonal aluminum inserts were inserted between two Mylar dielectric sheets stressed at 4.1 kV/mil. A reduction in rise time was noted for these multichannel switching events.

Delayed avalanche breakdown of high-voltage silicon diodes: Various structures exhibit different picosecond-range switching behavior

NASA Astrophysics Data System (ADS)

Brylevskiy, Viktor; Smirnova, Irina; Gutkin, Andrej; Brunkov, Pavel; Rodin, Pavel; Grekhov, Igor

2017-11-01

We present a comparative study of silicon high-voltage diodes exhibiting the effect of delayed superfast impact-ionization breakdown. The effect manifests itself in a sustainable picosecond-range transient from the blocking to the conducting state and occurs when a steep voltage ramp is applied to the p+-n-n+ diode in the reverse direction. Nine groups of diodes with graded and abrupt pn-junctions have been specially fabricated for this study by different techniques from different Si substrates. Additionally, in two groups of these structures, the lifetime of nonequilibrium carriers was intentionally reduced by electron irradiation. All diodes have identical geometrical parameters and similar stationary breakdown voltages. Our experimental setup allows measuring both device voltage and current during the kilovolt switching with time resolution better than 50 ps. Although all devices are capable of forming a front with kilovolt amplitude and 100 ps risetime in the in-series load, the structures with graded pn-junctions have anomalously large residual voltage. The Deep Level Transient Spectroscopy study of all diode structures has been performed in order to evaluate the effect of deep centers on device performance. It was found that the presence of deep-level electron traps negatively correlates with parameters of superfast switching, whereas a large concentration of recombination centers created by electron irradiation has virtually no influence on switching characteristics.

Gravimetric system using high-speed double switching valves for low liquid flow rates

NASA Astrophysics Data System (ADS)

Cheong, Kar-Hooi; Doihara, Ryouji; Shimada, Takashi; Terao, Yoshiya

2018-07-01

This paper presents a gravimetric system developed to perform the static weighing with flying-start-and-stop (SW-FSS) calibration method at low liquid flow rates using a pair of identical high-speed switching valves as a flow diverter. Features of the gravimetric system comprise three main components: a pair of switching valves that divert the working liquid between two symmetrical flow paths; a weighing vessel equipped with an overflow inner vessel and enclosed in a weighing chamber; and a liquid discharge mechanism comprising a discharge tube and a discharge pump, used with a multi-purpose bin. These are described with an explanation of the design considerations behind each feature. The overflow inner vessel is designed with a notch in its wall and is positioned so that it does not come into contact with the liquid surface of the accumulated liquid in the weighing vessel or the side wall of the weighing vessel to obtain a good repeatability of the interactive effects between the feeding tube and the submerging working liquid, thus ensuring a correct mass reading of the liquid collection. A performance test showed that, in terms of contribution to the overall uncertainty of the standard flow rate, the pair of switching valves is capable of performing SW-FSS satisfactorily with small relative timing errors within %. However, the mass loss due to evaporation is considered a major source of error of the gravimetric system, showing a maximum error of 0.011% under the most evaporative condition tested for the longest liquid collection time of the gravimetric system.

High-voltage, high-current, solid-state closing switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Focia, Ronald Jeffrey

2017-08-22

A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

The structural coupling between ATPase activation and recovery stroke in the myosin II motor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koppole, Sampath; Smith, Jeremy C; Fischer, S.

2007-07-01

Before the myosin motor head can perform the next power stroke, it undergoes a large conformational transition in which the converter domain, bearing the lever arm, rotates {approx} 65{sup o}. Simultaneous with this 'recovery stroke', myosin activates its ATPase function by closing the Switch-2 loop over the bound ATP. This coupling between the motions of the converter domain and of the 40 {angstrom}-distant Switch-2 loop is essential to avoid unproductive ATP hydrolysis. The coupling mechanism is determined here by finding a series of optimized intermediates between crystallographic end structures of the recovery stroke (Dictyostelium discoideum), yielding movies of the transitionmore » at atomic detail. The successive formation of two hydrogen bonds by the Switch-2 loop is correlated with the successive see-saw motions of the relay and SH1 helices that hold the converter domain. SH1 helix and Switch-2 loop communicate via a highly conserved loop that wedges against the SH1-helix upon Switch-2 closing.« less

Modality Switching in a Property Verification Task: An ERP Study of What Happens When Candles Flicker after High Heels Click

PubMed Central

Collins, Jennifer; Pecher, Diane; Zeelenberg, René; Coulson, Seana

2011-01-01

The perceptual modalities associated with property words, such as flicker or click, have previously been demonstrated to affect subsequent property verification judgments (Pecher et al., 2003). Known as the conceptual modality switch effect, this finding supports the claim that brain systems for perception and action help subserve the representation of concepts. The present study addressed the cognitive and neural substrate of this effect by recording event-related potentials (ERPs) as participants performed a property verification task with visual or auditory properties in key trials. We found that for visual property verifications, modality switching was associated with an increased amplitude N400. For auditory verifications, switching led to a larger late positive complex. Observed ERP effects of modality switching suggest property words access perceptual brain systems. Moreover, the timing and pattern of the effects suggest perceptual systems impact the decision-making stage in the verification of auditory properties, and the semantic stage in the verification of visual properties. PMID:21713128

Modality Switching in a Property Verification Task: An ERP Study of What Happens When Candles Flicker after High Heels Click.

PubMed

Collins, Jennifer; Pecher, Diane; Zeelenberg, René; Coulson, Seana

2011-01-01

The perceptual modalities associated with property words, such as flicker or click, have previously been demonstrated to affect subsequent property verification judgments (Pecher et al., 2003). Known as the conceptual modality switch effect, this finding supports the claim that brain systems for perception and action help subserve the representation of concepts. The present study addressed the cognitive and neural substrate of this effect by recording event-related potentials (ERPs) as participants performed a property verification task with visual or auditory properties in key trials. We found that for visual property verifications, modality switching was associated with an increased amplitude N400. For auditory verifications, switching led to a larger late positive complex. Observed ERP effects of modality switching suggest property words access perceptual brain systems. Moreover, the timing and pattern of the effects suggest perceptual systems impact the decision-making stage in the verification of auditory properties, and the semantic stage in the verification of visual properties.

Widely wavelength tunable gain-switched Er³⁺-doped ZBLAN fiber laser around 2.8 μm.

PubMed

Wei, Chen; Luo, Hongyu; Shi, Hongxia; Lyu, YanJia; Zhang, Han; Liu, Yong

2017-04-17

In this paper, we demonstrate a wavelength widely tunable gain-switched Er³⁺-doped ZBLAN fiber laser around 2.8 μm. The laser can be tuned over 170 nm (2699 nm~2869.9 nm) for various pump power levels, while maintaining stable μs-level single-pulse gain-switched operation with controllable output pulse duration at a selectable repetition rate. To the best of our knowledge, this is the first wavelength tunable gain-switched fiber laser in the 3 μm spectral region with the broadest tuning range (doubling the record tuning range) of the pulsed fiber lasers around 3 μm. Influences of pump energy and power on the output gain-switched laser performances are investigated in detail. This robust, simple, and versatile mid-infrared pulsed fiber laser source is highly suitable for many applications including laser surgery, material processing, sensing, spectroscopy, as well as serving as a practical seed source in master oscillator power amplifiers.

The structural coupling between ATPase activation and recovery stroke in the myosin II motor.

PubMed

Koppole, Sampath; Smith, Jeremy C; Fischer, Stefan

2007-07-01

Before the myosin motor head can perform the next power stroke, it undergoes a large conformational transition in which the converter domain, bearing the lever arm, rotates approximately 65 degrees . Simultaneous with this "recovery stroke," myosin activates its ATPase function by closing the Switch-2 loop over the bound ATP. This coupling between the motions of the converter domain and of the 40 A-distant Switch-2 loop is essential to avoid unproductive ATP hydrolysis. The coupling mechanism is determined here by finding a series of optimized intermediates between crystallographic end structures of the recovery stroke (Dictyostelium discoideum), yielding movies of the transition at atomic detail. The successive formation of two hydrogen bonds by the Switch-2 loop is correlated with the successive see-saw motions of the relay and SH1 helices that hold the converter domain. SH1 helix and Switch-2 loop communicate via a highly conserved loop that wedges against the SH1-helix upon Switch-2 closing.

Design and performance study of a DC-DC flyback converter based on wide bandgap power devices for photovoltaic applications

NASA Astrophysics Data System (ADS)

Alharbi, Salah S.; Alharbi, Saleh S.; Al-bayati, Ali M. S.; Matin, Mohammad

2017-08-01

This paper presents a high-performance dc-dc flyback converter design based on wide bandgap (WBG) semiconductor devices for photovoltaic (PV) applications. Two different power devices, a gallium nitride (GaN)-transistor and a silicon (Si)-MOSFET, are implemented individually in the flyback converter to examine their impact on converter performance. The total power loss of the converter with different power devices is analyzed for various switching frequencies. Converter efficiency is evaluated at different switching frequencies, input voltages, and output power levels. The results reveal that the converter with the GaN-transistor has lower total power loss and better efficiency compared to the converter with the conventional Si-MOSFET.

Electronic logic to enhance switch reliability in detecting openings and closures of redundant switches

DOEpatents

Cooper, James A.

1986-01-01

A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and failsafe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

Mixed H∞ and passive control for linear switched systems via hybrid control approach

NASA Astrophysics Data System (ADS)

Zheng, Qunxian; Ling, Youzhu; Wei, Lisheng; Zhang, Hongbin

2018-03-01

This paper investigates the mixed H∞ and passive control problem for linear switched systems based on a hybrid control strategy. To solve this problem, first, a new performance index is proposed. This performance index can be viewed as the mixed weighted H∞ and passivity performance. Then, the hybrid controllers are used to stabilise the switched systems. The hybrid controllers consist of dynamic output-feedback controllers for every subsystem and state updating controllers at the switching instant. The design of state updating controllers not only depends on the pre-switching subsystem and the post-switching subsystem, but also depends on the measurable output signal. The hybrid controllers proposed in this paper can include some existing ones as special cases. Combine the multiple Lyapunov functions approach with the average dwell time technique, new sufficient conditions are obtained. Under the new conditions, the closed-loop linear switched systems are globally uniformly asymptotically stable with a mixed H∞ and passivity performance index. Moreover, the desired hybrid controllers can be constructed by solving a set of linear matrix inequalities. Finally, a numerical example and a practical example are given.

RF MEMS Switches with SiC Microbridges for Improved Reliability

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Zorman, Christian A.; Oldham, Daniel R.

2008-01-01

Radio frequency (RF) microelectromechanical (MEMS) switches offer superior performance when compared to the traditional semiconductor devices such as PIN diodes or GaAs transistors. MEMS switches have a return loss (RL) better than -25 dB, negligible insertion loss (IL), isolation better than -30 dB, and near zero power consumption. However, RF MEMS switches have several drawbacks the most serious being long-term reliability. The ability for the switch to operate for millions or even billions of cycles is a major concern and must be addressed. MEMS switches are basically grouped in two categories, capacitive and metal-to-metal contact. The capacitive type switch consists of a movable metal bridge spanning a fixed electrode and separated by a narrow air gap and thin insulating material. The metal-to-metal contact type utilizes the same basic design but without the insulating material. After prolonged operation the metal bridges, in most of these switches, begin to sag and eventually fail to actuate. For the metal-to-metal type, the two metal layers may actually fuse together. Also if the switches are not packaged properly or protected from the environment moisture may build up and cause stiction between the top and bottom electrodes rendering them useless. Many MEMS switch designs have been developed and most illustrate fairly good RF characteristics. Nevertheless very few have demonstrated both great RF performance and ability to perform millions/billions of switching cycles. Of these, nearly all are of metal-to-metal type so as the frequency increases RF performance decreases.

High-Speed, high-power, switching transistor

NASA Technical Reports Server (NTRS)

Carnahan, D.; Ohu, C. K.; Hower, P. L.

1979-01-01

Silicon transistor rate for 200 angstroms at 400 to 600 volts combines switching speed of transistors with ruggedness, power capacity of thyristor. Transistor introduces unique combination of increased power-handling capability, unusally low saturation and switching losses, and submicrosecond switching speeds. Potential applications include high power switching regulators, linear amplifiers, chopper controls for high frequency electrical vehicle drives, VLF transmitters, RF induction heaters, kitchen cooking ranges, and electronic scalpels for medical surgery.

Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films

NASA Astrophysics Data System (ADS)

Kim, Taeho; Park, Jinsung; Cheong, Byoung-Ho; Jeon, Sanghun

2018-02-01

The effect of high-pressure nitrogen annealing at up to 50 atmospheres (atm) on Hf0.5Zr0.5O2 films at relatively low temperatures (450 °C) is analyzed using polarization-electric field curves, bipolar switching endurance measurements, grazing angle incidence X-ray diffraction, and piezoelectric force microscopy. Hf0.5Zr0.5O2 films annealed at 450 °C/50 atm have excellent characteristics, including remanent polarizations greater than 20 μC/cm2, a switching speed of 200 ns, and reliability, measured by sustained performance after 1010 bipolar switching cycles. The enhanced device features are attributed to the transition to the orthorhombic-phase from the tetragonal-phase of Hf0.5Zr0.5O2 at high pressure, which is also consistent with the results of "wake-up" analysis, and the variations of the pure polarization curves, extracted from the total displacement field under pressure.

A systematic review of the impact of center volume in dialysis.

PubMed

Pieper, Dawid; Mathes, Tim; Marshall, Mark Roger

2015-12-22

A significant relationship exists between the volume of surgical procedures that a given center performs and subsequent outcomes. It seems plausible that such a volume-outcome relationship is also present in dialysis. MEDLINE and EMBASE were searched in November 2014 for non-experimental studies evaluating the association between center volume and patient outcomes [mortality, morbidity, peritonitis, switch to hemodialysis (HD) or any other treatment], without language restrictions or other limits. Selection of relevant studies, data extraction and critical appraisal were performed by two independent reviewers. We did not perform meta-analysis due to clinical and methodological heterogeneity (e.g. different volume categories). 16 studies met out inclusion criteria. Most studies were performed in the US. The study quality ranged from fair to good. Only few items were judged to have a high risk of bias, while many items were judged to have an unclear risk of bias due to insufficient reporting. All 10 studies that analyzed peritoneal dialysis (PD) technique survival by modeling switch to HD or any other treatment as an outcome showed a statistical significant effect. The relative effect measures ranged from 0.25 to 0.94 (median 0.73) in favor of high volume centers. All nine studies indicated a lower mortality for PD in high volume centers, but only study was statistical significant. This systematic review supports a volume-outcome relationship in peritoneal dialysis with respect to switch to HD or any other treatment. An effect on mortality is probably present in HD. Further research is needed to identify and understand the associations of center volume that are causally related to patient benefit.

Switching Phenomena in a System with No Switches

NASA Astrophysics Data System (ADS)

Preis, Tobias; Stanley, H. Eugene

2010-02-01

It is widely believed that switching phenomena require switches, but this is actually not true. For an intriguing variety of switching phenomena in nature, the underlying complex system abruptly changes from one state to another in a highly discontinuous fashion. For example, financial market fluctuations are characterized by many abrupt switchings creating increasing trends ("bubble formation") and decreasing trends ("financial collapse"). Such switching occurs on time scales ranging from macroscopic bubbles persisting for hundreds of days to microscopic bubbles persisting only for a few seconds. We analyze a database containing 13,991,275 German DAX Future transactions recorded with a time resolution of 10 msec. For comparison, a database providing 2,592,531 of all S&P500 daily closing prices is used. We ask whether these ubiquitous switching phenomena have quantifiable features independent of the time horizon studied. We find striking scale-free behavior of the volatility after each switching occurs. We interpret our findings as being consistent with time-dependent collective behavior of financial market participants. We test the possible universality of our result by performing a parallel analysis of fluctuations in transaction volume and time intervals between trades. We show that these financial market switching processes have properties similar to those of phase transitions. We suggest that the well-known catastrophic bubbles that occur on large time scales—such as the most recent financial crisis—are no outliers but single dramatic representatives caused by the switching between upward and downward trends on time scales varying over nine orders of magnitude from very large (≈102 days) down to very small (≈10 ms).

The Role of Physical Fitness in the Neurocognitive Performance of Task Switching in Older Persons with Mild Cognitive Impairment.

PubMed

Tsai, Chia-Liang; Pai, Ming-Chyi; Ukropec, Jozef; Ukropcová, Barbara

2016-04-23

Although elderly people with amnestic mild cognitive impairment (aMCI) have been found to show impaired behavioral performance in task switching, no research has yet explored the electrophysiological mechanisms and the potential correlation between physical fitness and neurocognitive (i.e., behavioral and electrophysiological) performance in aMCI. The present study was thus aimed to examine whether there are differences in electrophysiological (i.e., event-related potential) performance between aMCI participants and controls when performing a task-switching paradigm, and to investigate the role of physical fitness in the relationship between neurocognitive performance and aMCI. Sixty participants were classified into aMCI (n = 30) and control (n = 30) groups, and performed a task-switching paradigm with concomitant electrophysiological recording, as well as underwent senior functional physical fitness tests. The aMCI group showed comparable scores on most parts of the physical fitness tests, but reduced lower body flexibility and VO2max as compared to the control group. When performing the task-switching paradigm, the aMCI group showed slower reaction times in the heterogeneous condition and larger global switching costs, although no significant difference was observed in accuracy rates between the two groups. In addition, the aMCI group showed significantly prolonged P3 latencies in the homogeneous and heterogeneous conditions, and a smaller P3 amplitude only in the heterogeneous condition. The level of cardiorespiratory fitness was significantly correlated with P3 amplitude in the aMCI group, particularly in the heterogeneous condition of the task-switching paradigm. These results show that the aMCI group exhibited abnormalities in their neurocognitive performance when performing the task-switching paradigm and such a deficit was likely associated with reduced cardiorespiratory fitness, which was shown to be the important predictor of neurocognitive performance.

A pulse-compression-ring circuit for high-efficiency electric propulsion.

PubMed

Owens, Thomas L

2008-03-01

A highly efficient, highly reliable pulsed-power system has been developed for use in high power, repetitively pulsed inductive plasma thrusters. The pulsed inductive thruster ejects plasma propellant at a high velocity using a Lorentz force developed through inductive coupling to the plasma. Having greatly increased propellant-utilization efficiency compared to chemical rockets, this type of electric propulsion system may one day propel spacecraft on long-duration deep-space missions. High system reliability and electrical efficiency are extremely important for these extended missions. In the prototype pulsed-power system described here, exceptional reliability is achieved using a pulse-compression circuit driven by both active solid-state switching and passive magnetic switching. High efficiency is achieved using a novel ring architecture that recovers unused energy in a pulse-compression system with minimal circuit loss after each impulse. As an added benefit, voltage reversal is eliminated in the ring topology, resulting in long lifetimes for energy-storage capacitors. System tests were performed using an adjustable inductive load at a voltage level of 3.3 kV, a peak current of 20 kA, and a current switching rate of 15 kA/micros.

Low mass MEMS/NEMS switch for a substitute of CMOS transistor using single-walled carbon nanotube thin film

NASA Astrophysics Data System (ADS)

Jang, Min-Woo

Power dissipation is a key factor for mobile devices and other low power applications. Complementary metal oxide semiconductor (CMOS) is the dominant integrated circuit (IC) technology responsible for a large part of this power dissipation. As the minimum feature size of CMOS devices enters into the sub 50 nanometer (nm) regime, power dissipation becomes much worse due to intrinsic physical limits. Many approaches have been studied to reduce power dissipation of deeply scaled CMOS ICs. One possible candidate is the electrostatic electromechanical switch, which could be fabricated with conventional CMOS processing techniques. They have critical advantages compared to CMOS devices such as almost zero standby leakage in the off-state due to the absence of a pn junction and a gate oxide, as well as excellent drive current in the on-state due to a metallic channel. Despite their excellent standby power dissipation, the electrostatic MEMS/NEMS switches have not been considered as a viable replacement for CMOS devices due to their large mechanical delay. Moreover, previous literature reveals that their pull-in voltage and switching speed are strongly proportional to each other. This reduces their potential advantage. However, in this work, we theoretically and experimentally demonstrated that the use of single-walled carbon nanotube (SWNT) with very low mass density and strong mechanical properties could provide a route to move off of the conventional trend with respect to the pull-in voltage / switching speed tradeoff observed in the literature. We fabricated 2-terminal fixed- beam switches with aligned composite SWNT thin films. In this work, layer-by-layer (LbL) self-assembly and dielectrophoresis were selected for aligned-composite SWNT thin film deposition. The dense membranes were successfully patterned to form submicron beams by e-beam lithography and oxygen plasma etching. Fixed-fixed beam switches using these membranes successfully operated with approximately 600 psec switching delay and as low as a 3 V dc pull-in. From this we confirmed that the SWNT-based thin films have the potential to make fast MEMS switches with a low operation voltage due to its low mass density and high stiffness. However, the copolymer caused a serious reliability issue and a copolymer-free SWNT film deposition method was developed by replacing positive copolymer with a dispersion of positively functionalized SWNTs. The electrical and physical properties of pure single-walled carbon nanotube thin films deposited through a copolymer-free LbL self-assembly process are then discussed. The film thickness was proportional to the number of dipping cycles. The film resistivity was estimated as 2.19x10-3 Ω-cm after thermal treatments were performed. The estimated specific contact resistance to gold electrodes was 6.33x10-9 Ω-m2 from contact chain measurements. The fabricated 3-terminal MEMS switches using these films functioned as a beam for multiple switching cycles with a 4.5V pull-in voltage, which was operated like a 2-input NAND gate. The SWNT-based thin film switch is promising for a variety of applications to high-end nanoelectronics and high- performance MEMS/NEMS.

Current Bypassing Properties by Thermal Switch for PCS Application on NMR/MRI HTS Magnets

NASA Astrophysics Data System (ADS)

Kim, S. B.; Takahashi, M.; Saito, R.; Park, Y. J.; Lee, M. W.; Oh, Y. K.; Ann, H. S.

We develop the compact NMR/MRI device using high temperature superconducting (HTS) wires with the persistent current mode operating. So, the joint techniques between 2G wires are very important issue and many studies have been carried out. Recently, the Kbigdot JOINS, Inc. has developed successfully the high performance superconducting joints between 2G wires by partial melting diffusion and oxygenation annealing process [1]. In this study, the current bypassing properties in a loop-shaped 2G wire are measured experimentally to develop the permanent current switch (PSC). The current bypassing properties of loop-shaped test coil wound with 2G wire (GdBCO) are evaluated by measured the self-magnetic field due to bypassed current by Hall sensors. The strain gauge was used as heater for persistent current switch, and thermal properties against various thermal inputs were investigated experimentally.

Reversible adhesion switching of porous fibrillar adhesive pads by humidity.

PubMed

Xue, Longjian; Kovalev, Alexander; Dening, Kirstin; Eichler-Volf, Anna; Eickmeier, Henning; Haase, Markus; Enke, Dirk; Steinhart, Martin; Gorb, Stanislav N

2013-01-01

We report reversible adhesion switching on porous fibrillar polystyrene-block-poly(2-vinyl pyridine) (PS-b-P2VP) adhesive pads by humidity changes. Adhesion at a relative humidity of 90% was more than nine times higher than at a relative humidity of 2%. On nonporous fibrillar adhesive pads of the same material, adhesion increased only by a factor of ~3.3. The switching performance remained unchanged in at least 10 successive high/low humidity cycles. Main origin of enhanced adhesion at high humidity is the humidity-induced decrease in the elastic modulus of the polar component P2VP rather than capillary force. The presence of spongelike continuous internal pore systems with walls consisting of P2VP significantly leveraged this effect. Fibrillar adhesive pads on which adhesion is switchable by humidity changes may be used for preconcentration of airborne particulates, pollutants, and germs combined with triggered surface cleaning.

Active Control of Charge Density Waves at Degenerate Semiconductor Interfaces

NASA Astrophysics Data System (ADS)

Vinnakota, Raj; Genov, Dentcho

We present numerical modeling of an active electronically controlled highly confined charge-density waves, i.e. surface plasmon polaritons (SPPs) at the metallurgic interfaces of degenerate semiconductor materials. An electro-optic switching element for fully-functional plasmonic circuits based on p-n junction semiconductor Surface Plasmon Polariton (SPP) waveguide is shown. Two figures of merits are introduced and parametric study has been performed identifying the device optimal operation range. The Indium Gallium Arsenide (In0.53Ga0.47As) is identified as the best semiconductor material for the device providing high optical confinement, reduced system size and fast operation. The electro-optic SPP switching element is shown to operate at signal modulation up to -24dB and switching rates surpassing 100GHz, thus potentially providing a new pathway toward bridging the gap between electronic and photonic devices. The current work is funded by the NSF EPSCoR CIMM project under award #OIA-1541079.

Comparative study of bolometric and non-bolometric switching elements for microwave phase shifters

NASA Technical Reports Server (NTRS)

Tabib-Azar, Massood; Bhasin, Kul B.; Romanofsky, Robert R.

1991-01-01

The performance of semiconductor and high critical temperature superconductor switches is compared as they are used in delay-line-type microwave and millimeter-wave phase shifters. Such factors as their ratios of the off-to-on resistances, parasitic reactances, power consumption, speed, input-to-output isolation, ease of fabrication, and physical dimensions are compared. Owing to their almost infinite off-to-on resistance ratio and excellent input-to-output isolation, bolometric superconducting switches appear to be quite suitable for use in microwave phase shifters; their only drawbacks are their speed and size. The SUPERFET, a novel device whose operation is based on the electric field effect in high critical temperature ceramic superconductors is also discussed. Preliminary results indicate that the SUPERFET is fast and that it can be scaled; therefore, it can be fabricated with dimensions comparable to semiconductor field-effect transistors.

Communications Satellite Systems Conference, 9th, San Diego, CA, March 7-11, 1982, Collection of Technical Papers

NASA Astrophysics Data System (ADS)

The Shuttle-to-Geostationary Orbital Transfer by mid-level thrust is considered along with multibeam antenna concepts for global communications, the antenna pointing systems for large communication satellites, the connection phase of multidestination protocols for broadcast satellites, and an experiment in high-speed international packet switching. Attention is given to a dynamic switch matrix for the TDMA satellite switching system, the characterization of 16 bit microprocessors for space use, in-orbit operation and test of Intelsat V satellites, the first operational communications system via satellite in Europe, the Arab satellite communications systems, second generation business satellite systems for Europe, and a high performance Ku-band satellite for the 1980's. Other topics investigated are related to Ku-band terminal design tradeoffs, progress in the definition of the Italian satellite for domestic telecommunications, future global satellite systems for Intelsat, and satellite refuelling in orbit.

Study of Ag/RGO/ITO sandwich structure for resistive switching behavior deposited on plastic substrate

NASA Astrophysics Data System (ADS)

Vartak, Rajdeep; Rag, Adarsh; De, Shounak; Bhat, Somashekhara

2018-05-01

We report here the use of facile and environmentally benign way synthesized reduced graphene oxide (RGO) for low-voltage non-volatile memory device as charge storing element. The RGO solutions have been synthesized using electrochemical exfoliation of battery electrode. The solution processed based RGO solution is suitable for large area and low-cost processing on plastic substrate. Room-temperature current-voltage characterisation has been carried out in Ag/RGO/ITO PET sandwich configuration to study the type of trap distribution. It is observed that in the low-voltage sweep, ohmic current is the main mechanism of current flow and trap filled/assisted conduction is observed at high-sweep voltage region. The Ag/RGO/ITO PET sandwich structure showed bipolar resistive switching behavior. These mechanisms can be analyzed based on oxygen availability and vacancies in the RGO giving rise to continuous least resistive path (conductive) and high resistance path along the structure. An Ag/RGO/ITO arrangement demonstrates long retention time with low operating voltage, low set/reset voltage, good ON/OFF ratio of 103 (switching transition between lower resistance state and higher resistance state and decent switching performance. The RGO memory showed decent results with an almost negligible degradation in switching properties which can be used for low-voltage and low-cost advanced flexible electronics.

Electronic logic for enhanced switch reliability

DOEpatents

Cooper, J.A.

1984-01-20

A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and fail-safe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

A resistance ratio change phenomenon observed in Al doped ZnO (AZO)/Cu(In1-xGax)Se2/Mo resistive switching memory device

NASA Astrophysics Data System (ADS)

Guo, Tao; Sun, Bai; Mao, Shuangsuo; Zhu, Shouhui; Xia, Yudong; Wang, Hongyan; Zhao, Yong; Yu, Zhou

2018-03-01

In this work, the Cu(In1-xGax)Se2 (CIGS), Al doped ZnO (AZO) and Mo has been used for constructing a resistive switching device with AZO/CIGS/Mo sandwich structure grown on a transparent glass substrate. The device represents a high-performance memory characteristics under ambient temperature. In particularly, a resistance ratio change phenomenon have been observed in our device for the first time.

A Lossless Network for Data Acquisition

NASA Astrophysics Data System (ADS)

Jereczek, Grzegorz; Lehmann Miotto, Giovanna; Malone, David; Walukiewicz, Miroslaw

2017-06-01

The bursty many-to-one communication pattern, typical for data acquisition systems, is particularly demanding for commodity TCP/IP and Ethernet technologies. We expand the study of lossless switching in software running on commercial off-the-shelf servers, using the ATLAS experiment as a case study. In this paper, we extend the popular software switch, Open vSwitch, with a dedicated, throughput-oriented buffering mechanism for data acquisition. We compare the performance under heavy congestion on typical Ethernet switches to a commodity server acting as a switch. Our results indicate that software switches with large buffers perform significantly better. Next, we evaluate the scalability of the system when building a larger topology of interconnected software switches, exploiting the integration with software-defined networking technologies. We build an IP-only leaf-spine network consisting of eight software switches running on distinct physical servers as a demonstrator.

Finite Ground Coplanar Waveguide Shunt MEMS Switches for Switched Line Phase Shifters

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Simons, Rainee N.; Scardelletti, Maximillian; Varaljay, Nicholas C.

2000-01-01

Switches with low insertion loss and high isolation are required for switched line phase shifters and the transmit/receive switch at the front end of communication systems. A Finite Ground Coplanar (FGC) waveguide capacitive, shunt MEMS switch has been implemented on high resistivity Si. The switch has demonstrated an insertion loss of less than 0.3 dB and a return loss greater than 15 dB from 10 to 20, GHz. The switch design, fabrication, and characteristics are presented.

Switch contact device for interrupting high current, high voltage, AC and DC circuits

DOEpatents

Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

2005-01-04

A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

Development of an efficient DC-DC SEPIC converter using wide bandgap power devices for high step-up applications

NASA Astrophysics Data System (ADS)

Al-bayati, Ali M. S.; Alharbi, Salah S.; Alharbi, Saleh S.; Matin, Mohammad

2017-08-01

A highly efficient high step-up dc-dc converter is the major requirement in the integration of low voltage renewable energy sources, such as photovoltaic panel module and fuel cell stacks, with a load or utility. This paper presents the development of an efficient dc-dc single-ended primary-inductor converter (SEPIC) for high step-up applications. Three SEPIC converters are designed and studied using different combinations of power devices: a combination based on all Si power devices using a Si-MOSFET and a Si-diode and termed as Si/Si, a combination based on a hybrid of Si and SiC power devices using the Si-MOSFET and a SiC-Schottky diode and termed as Si/SiC, and a combination based on all SiC power devices using a SiC-MOSFET and the SiC-Schottky diode and termed as SiC/SiC. The switching behavior of the Si-MOSFET and SiC-MOSFET is characterized and analyzed within the different combinations at the converter level. The effect of the diode type on the converter's overall performance is also discussed. The switching energy losses, total power losses, and the overall performance effciency of the converters are measured and reported under different switching frequencies. Furthermore, the potential of the designed converters to operate efficiently at a wide range of input voltages and output powers is studied. The analysis and results show an outstanding performance efficiency of the designed SiC/SiC based converter under a wide range of operating conditions.

Qualitative Differences between Bilingual Language Control and Executive Control: Evidence from Task-Switching

PubMed Central

Calabria, Marco; Hernández, Mireia; Branzi, Francesca M.; Costa, Albert

2012-01-01

Previous research has shown that highly proficient bilinguals have comparable switch costs in both directions when they switch between languages (L1 and L2), the so-called “symmetrical switch cost” effect. Interestingly, the same symmetry is also present when they switch between L1 and a much weaker L3. These findings suggest that highly proficient bilinguals develop a language control system that seems to be insensitive to language proficiency. In the present study, we explore whether the pattern of symmetrical switch costs in language switching tasks generalizes to a non-linguistic switching task in the same group of highly proficient bilinguals. The end goal of this is to assess whether bilingual language control (bLC) can be considered as subsidiary to domain-general executive control (EC). We tested highly proficient Catalan–Spanish bilinguals both in a linguistic switching task and in a non-linguistic switching task. In the linguistic task, participants named pictures in L1 and L2 (Experiment 1) or L3 (Experiment 2) depending on a cue presented with the picture (a flag). In the non-linguistic task, the same participants had to switch between two card sorting rule-sets (color and shape). Overall, participants showed symmetrical switch costs in the linguistic switching task, but not in the non-linguistic switching task. In a further analysis, we observed that in the linguistic switching task the asymmetry of the switch costs changed across blocks, while in the non-linguistic switching task an asymmetrical switch cost was observed throughout the task. The observation of different patterns of switch costs in the linguistic and the non-linguistic switching tasks suggest that the bLC system is not completely subsidiary to the domain-general EC system. PMID:22275905

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2006-03-14

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2008-03-25

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

Evaluation of half wave induction motor drive for use in passenger vehicles

NASA Technical Reports Server (NTRS)

Hoft, R. G.; Kawamura, A.; Goodarzi, A.; Yang, G. Q.; Erickson, C. L.

1985-01-01

Research performed at the University of Missouri-Columbia to devise and design a lower cost inverter induction motor drive for electrical propulsion of passenger vehicles is described. A two phase inverter motor system is recommended. The new design is predicted to provide comparable vehicle performance, improved reliability and a cost advantage for a high production vehicle, decreased total rating of the power semiconductor switches, and a somewhat simpler control hardware compared to the conventional three phase bridge inverter motor drive system. The major disadvantages of the two phase inverter motor drive are that it is larger and more expensive than a three phase machine, the design of snubbers for the power leakage inductances produce higher transient voltages, and the torque pulsations are relatively large because of the necessity to limit the inverter switching frequency to achieve high efficiency.

Origin of Ferrimagnetism and Ferroelectricity in Room-Temperature Multiferroic ɛ -Fe2O3

NASA Astrophysics Data System (ADS)

Xu, K.; Feng, J. S.; Liu, Z. P.; Xiang, H. J.

2018-04-01

Exploring and identifying room-temperature multiferroics is critical for developing better nonvolatile random-access memory devices. Recently, ɛ -Fe2O3 was found to be a promising room-temperature multiferroic with a large polarization and magnetization. However, the origin of the multiferroicity in ɛ -Fe2O3 is still puzzling. In this work, we perform density-functional-theory calculations to reveal that the spin frustration between tetrahedral-site Fe3 + spins gives rise to the unexpected ferrimagnetism. For the ferroelectricity, we identify a low-energy polarization switching path with an energy barrier of 85 meV /f .u . by performing a stochastic surface walking simulation. The switching of the ferroelectric polarization is achieved by swapping the tetrahedral Fe ion with the octahedral Fe ion, different from the usual case (e.g., in BaTiO3 and BiFeO3 ) where the coordination number remains unchanged after the switching. Our results not only confirm that ɛ -Fe2O3 is a promising room-temperature multiferroic but also provide guiding principles to design high-performance multiferroics.

Age-related decline in task switching is linked to both global and tract-specific changes in white matter microstructure.

PubMed

Jolly, Todd A D; Cooper, Patrick S; Rennie, Jaime L; Levi, Christopher R; Lenroot, Rhoshel; Parsons, Mark W; Michie, Patricia T; Karayanidis, Frini

2017-03-01

Task-switching performance relies on a broadly distributed frontoparietal network and declines in older adults. In this study, they investigated whether this age-related decline in task switching performance was mediated by variability in global or regional white matter microstructural health. Seventy cognitively intact adults (43-87 years) completed a cued-trials task switching paradigm. Microstructural white matter measures were derived using diffusion tensor imaging (DTI) analyses on the diffusion-weighted imaging (DWI) sequence. Task switching performance decreased with increasing age and radial diffusivity (RaD), a measure of white matter microstructure that is sensitive to myelin structure. RaD mediated the relationship between age and task switching performance. However, the relationship between RaD and task switching performance remained significant when controlling for age and was stronger in the presence of cardiovascular risk factors. Variability in error and RT mixing cost were associated with RaD in global white matter and in frontoparietal white matter tracts, respectively. These findings suggest that age-related increase in mixing cost may result from both global and tract-specific disruption of cerebral white matter linked to the increased incidence of cardiovascular risks in older adults. Hum Brain Mapp 38:1588-1603, 2017. © 2016 Wiley Periodicals, Inc. © 2016 Wiley Periodicals, Inc.

Integrated Model for Performance Analysis of All-Optical Multihop Packet Switches

NASA Astrophysics Data System (ADS)

Jeong, Han-You; Seo, Seung-Woo

2000-09-01

The overall performance of an all-optical packet switching system is usually determined by two criteria, i.e., switching latency and packet loss rate. In some real-time applications, however, in which packets arriving later than a timeout period are discarded as loss, the packet loss rate becomes the most dominant criterion for system performance. Here we focus on evaluating the performance of all-optical packet switches in terms of the packet loss rate, which normally arises from the insufficient hardware or the degradation of an optical signal. Considering both aspects, we propose what we believe is a new analysis model for the packet loss rate that reflects the complicated interactions between physical impairments and system-level parameters. On the basis of the estimation model for signal quality degradation in a multihop path we construct an equivalent analysis model of a switching network for evaluating an average bit error rate. With the model constructed we then propose an integrated model for estimating the packet loss rate in three architectural examples of multihop packet switches, each of which is based on a different switching concept. We also derive the bounds on the packet loss rate induced by bit errors. Finally, it is verified through simulation studies that our analysis model accurately predicts system performance.

Electro-optic control of a PPLN-unpoled LiNbO3 boundary for low-voltage Q switching of an intracavity frequency-doubled Nd3+:YVO4 laser.

PubMed

Torregrosa, A J; Maestre, H; Fernández-Pousa, C R; Pereda, J A; Capmany, J

2009-08-01

We present a simple technique to integrate an electro-optic Q switch in a periodically poled bulk lithium niobate crystal bounded by two unpoled (monodomain) regions. The technique exploits the high sensitivity to low applied electric fields of the total internal reflection condition in the periodic poled-unpoled boundary for the small grazing incidence angles associated with the diffraction of a focused Gaussian beam that propagates in the periodically poled region with its axis parallel to the boundary. When the arrangement is placed intracavity to a 1064 nm diode-pumped Nd(3+):YVO(4) laser, it performs simultaneously as a Q switch and as a second-harmonic generator, with Q switching starting at applied voltages as low as 1 V over a 500 microm thickness and with no additional optical elements.

Magneto-hydrodynamic modeling of gas discharge switches

NASA Astrophysics Data System (ADS)

Doiphode, P.; Sakthivel, N.; Sarkar, P.; Chaturvedi, S.

2002-12-01

We have performed one-dimensional, time-dependent magneto-hydrodynamic modeling of fast gas-discharge switches. The model has been applied to both high- and low-pressure switches, involving a cylindrical argon-filled cavity. It is assumed that the discharge is initiated in a small channel near the axis of the cylinder. Joule heating in this channel rapidly raises its temperature and pressure. This drives a radial shock wave that heats and ionizes the surrounding low-temperature region, resulting in progressive expansion of the current channel. Our model is able to reproduce this expansion. However, significant difference of detail is observed, as compared with a simple model reported in the literature. In this paper, we present details of our simulations, a comparison with results from the simple model, and a physical interpretation for these differences. This is a first step towards development of a detailed 2-D model for such switches.

A Compact, Soft-Switching DC-DC Converter for Electric Propulsion

NASA Technical Reports Server (NTRS)

Button, Robert; Redilla, Jack; Ayyanar, Raja

2003-01-01

A hybrid, soft-switching, DC-DC converter has been developed with superior soft switching characteristics, high efficiency, and low electro-magnetic interference. This hybrid topology is comprised of an uncontrolled bridge operating at full pulse-width, and a controlled section operating as a conventional phase modulated converter. The unique topology is able to maintain zero voltage switching down to no load operating conditions. A breadboard prototype was developed and tested to demonstrate the benefits of the topology. Improvements were then made to reduce the size of passive components and increase efficiency in preparation for packaging. A packaged prototype was then designed and built, and several innovative packaging techniques are presented. Performance test data is presented that reveals deficiencies in the design of the power transformer. A simple redesign of the transformer windings eliminated the deficiency. Future plans to improve the converter and packaging design are presented along with several conclusions.

CAD of 0.1- to 10-GHz GaAs MMIC SPST switch

NASA Astrophysics Data System (ADS)

Yadav, Ramchandra; Kirty, V. S. R.

1998-04-01

The design of the SPST switch provides an insertion loss less than 2 dB, isolation more than 40 dB and return loss better than 17.5 dB in the frequency range of 0.1 GHz to 10 GHz. The insertion loss is improved by treating SPST switch as a 50 (Omega) artificial transmission line with incorporation of inductor in series arm and the capacitance of MESFET in the shunt arm. High isolation is ensured by the lower value of `ON' resistance of MESFET in shunt arm. Also good return loss is achieved by paralleling a 50 (Omega) resistor with capacitance of MESFET in series arm. The absence of DC blocking capacitors and replacement of large value bias chokes with 5 K(Omega) resistors effectively improved the performance of SPST switch at low frequency and also reduced the chip size. The overall chip dimension is 2.2 mm X 1.7 mm.

Resistive switching properties and physical mechanism of cobalt ferrite thin films

NASA Astrophysics Data System (ADS)

Hu, Wei; Zou, Lilan; Chen, Ruqi; Xie, Wei; Chen, Xinman; Qin, Ni; Li, Shuwei; Yang, Guowei; Bao, Dinghua

2014-04-01

We report reproducible resistive switching performance and relevant physical mechanism of sandwiched Pt/CoFe2O4/Pt structures in which the CoFe2O4 thin films were fabricated by a chemical solution deposition method. Uniform switching voltages, good endurance, and long retention have been demonstrated in the Pt/CoFe2O4/Pt memory cells. On the basis of the analysis of current-voltage characteristic and its temperature dependence, we suggest that the carriers transport through the conducting filaments in low resistance state with Ohmic conduction behavior, and the Schottky emission and Poole-Frenkel emission dominate the conduction mechanism in high resistance state. From resistance-temperature dependence of resistance states, we believe that the physical origin of the resistive switching refers to the formation and rupture of the oxygen vacancies related filaments. The nanostructured CoFe2O4 thin films can find applications in resistive random access memory.

Process change evaluation framework for allogeneic cell therapies: impact on drug development and commercialization.

PubMed

Hassan, Sally; Huang, Hsini; Warren, Kim; Mahdavi, Behzad; Smith, David; Jong, Simcha; Farid, Suzanne S

2016-04-01

Some allogeneic cell therapies requiring a high dose of cells for large indication groups demand a change in cell expansion technology, from planar units to microcarriers in single-use bioreactors for the market phase. The aim was to model the optimal timing for making this change. A development lifecycle cash flow framework was created to examine the implications of process changes to microcarrier cultures at different stages of a cell therapy's lifecycle. The analysis performed under assumptions used in the framework predicted that making this switch earlier in development is optimal from a total expected out-of-pocket cost perspective. From a risk-adjusted net present value view, switching at Phase I is economically competitive but a post-approval switch can offer the highest risk-adjusted net present value as the cost of switching is offset by initial market penetration with planar technologies. The framework can facilitate early decision-making during process development.

Impacts of Co doping on ZnO transparent switching memory device characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simanjuntak, Firman Mangasa; Wei, Kung-Hwa; Prasad, Om Kumar

2016-05-02

The resistive switching characteristics of indium tin oxide (ITO)/Zn{sub 1−x}Co{sub x}O/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnOmore » device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.« less

Kinetic factors determining conducting filament formation in solid polymer electrolyte based planar devices

NASA Astrophysics Data System (ADS)

Krishnan, Karthik; Aono, Masakazu; Tsuruoka, Tohru

2016-07-01

Resistive switching characteristics and conducting filament formation dynamics in solid polymer electrolyte (SPE) based planar-type atomic switches, with opposing active Ag and inert Pt electrodes, have been investigated by optimizing the device configuration and experimental parameters such as the gap distance between the electrodes, the salt inclusion in the polymer matrix, and the compliance current applied in current-voltage measurements. The high ionic conductivities of SPE enabled us to make scanning electron microscopy observations of the filament formation processes in the sub-micrometer to micrometer ranges. It was found that switching behaviour and filament growth morphology depend strongly on several kinetic factors, such as the redox reaction rate at the electrode-polymer interfaces, ion mobility in the polymer matrix, electric field strength, and the reduction sites for precipitation. Different filament formations, resulting from unidirectional and dendritic growth behaviours, can be controlled by tuning specified parameters, which in turn improves the stability and performance of SPE-based devices.Resistive switching characteristics and conducting filament formation dynamics in solid polymer electrolyte (SPE) based planar-type atomic switches, with opposing active Ag and inert Pt electrodes, have been investigated by optimizing the device configuration and experimental parameters such as the gap distance between the electrodes, the salt inclusion in the polymer matrix, and the compliance current applied in current-voltage measurements. The high ionic conductivities of SPE enabled us to make scanning electron microscopy observations of the filament formation processes in the sub-micrometer to micrometer ranges. It was found that switching behaviour and filament growth morphology depend strongly on several kinetic factors, such as the redox reaction rate at the electrode-polymer interfaces, ion mobility in the polymer matrix, electric field strength, and the reduction sites for precipitation. Different filament formations, resulting from unidirectional and dendritic growth behaviours, can be controlled by tuning specified parameters, which in turn improves the stability and performance of SPE-based devices. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr00569a

Switch-Task Performance in Rats Is Disturbed by 12 h of Sleep Deprivation But Not by 12 h of Sleep Fragmentation

PubMed Central

Leenaars, Cathalijn H.C.; Joosten, Ruud N.J.M.A.; Zwart, Allard; Sandberg, Hans; Ruimschotel, Emma; Hanegraaf, Maaike A.J.; Dematteis, Maurice; Feenstra, Matthijs G.P.; van Someren, Eus J.W.

2012-01-01

Study Objectives: Task-switching is an executive function involving the prefrontal cortex. Switching temporarily attenuates the speed and/or accuracy of performance, phenomena referred to as switch costs. In accordance with the idea that prefrontal function is particularly sensitive to sleep loss, switch-costs increase during prolonged waking in humans. It has been difficult to investigate the underlying neurobiological mechanisms because of the lack of a suitable animal model. Here, we introduce the first switch-task for rats and report the effects of sleep deprivation and inactivation of the medial prefrontal cortex. Design: Rats were trained to repeatedly switch between 2 stimulus-response associations, indicated by the presentation of a visual or an auditory stimulus. These stimulus-response associations were offered in blocks, and performance was compared for the first and fifth trials of each block. Performance was tested after exposure to 12 h of total sleep deprivation, sleep fragmentation, and their respective movement control conditions. Finally, it was tested after pharmacological inactivation of the medial prefrontal cortex. Settings: Controlled laboratory settings. Participants: 15 male Wistar rats. Measurements & Results: Both accuracy and latency showed switch-costs at baseline. Twelve hours of total sleep deprivation, but not sleep fragmentation, impaired accuracy selectively on the switch-trials. Inactivation of the medial prefrontal cortex by local neuronal inactivation resulted in an overall decrease in accuracy. Conclusions: We developed and validated a switch-task that is sensitive to sleep deprivation. This introduces the possibility for in-depth investigations on the neurobiological mechanisms underlying executive impairments after sleep disturbance in a rat model. Citation: Leenaars CHC; Joosten RNJMA; Zwart A; Sandberg H; Ruimschotel E; Hanegraaf MAJ; Dematteis M; Feenstra MGP; van Someren EJW. Switch-task performance in rats is disturbed by 12 h of sleep deprivation but not by 12 h of sleep fragmentation. SLEEP 2012;35(2):211-221. PMID:22294811

Picosecond High Pressure Gas Switch Experiment

DTIC Science & Technology

1993-06-01

the calculated pulse waveform for a much higher voltage and pressure switch . Also, a discussion of the modifications made on an existing pulse...s 80 8 ~ 60 J 40 .. : ~--~: __ ~’----~-~ 0.1 10 100 1000 Frequency Figure 7. Output switch recovery. Conclusion The high- pressure switch has...effective in matching experimental results, and should thus be useful in the design of high-voltage and pressure switch configurations

A Novel Offset Cancellation Based on Parasitic-Insensitive Switched-Capacitor Sensing Circuit for the Out-of-Plane Single-Gimbaled Decoupled CMOS-MEMS Gyroscope

PubMed Central

Chang, Ming-Hui; Huang, Han-Pang

2013-01-01

This paper presents a novel parasitic-insensitive switched-capacitor (PISC) sensing circuit design in order to obtain high sensitivity and ultra linearity and reduce the parasitic effect for the out-of-plane single-gimbaled decoupled CMOS-MEMS gyroscope (SGDG). According to the simulation results, the proposed PISC circuit has better sensitivity and high linearity in a wide dynamic range. Experimental results also show a better performance. In addition, the PISC circuit can use signal processing to cancel the offset and noise. Thus, this circuit is very suitable for gyroscope measurement. PMID:23493122

An efficient platform for genetic selection and screening of gene switches in Escherichia coli

PubMed Central

Muranaka, Norihito; Sharma, Vandana; Nomura, Yoko; Yokobayashi, Yohei

2009-01-01

Engineered gene switches and circuits that can sense various biochemical and physical signals, perform computation, and produce predictable outputs are expected to greatly advance our ability to program complex cellular behaviors. However, rational design of gene switches and circuits that function in living cells is challenging due to the complex intracellular milieu. Consequently, most successful designs of gene switches and circuits have relied, to some extent, on high-throughput screening and/or selection from combinatorial libraries of gene switch and circuit variants. In this study, we describe a generic and efficient platform for selection and screening of gene switches and circuits in Escherichia coli from large libraries. The single-gene dual selection marker tetA was translationally fused to green fluorescent protein (gfpuv) via a flexible peptide linker and used as a dual selection and screening marker for laboratory evolution of gene switches. Single-cycle (sequential positive and negative selections) enrichment efficiencies of >7000 were observed in mock selections of model libraries containing functional riboswitches in liquid culture. The technique was applied to optimize various parameters affecting the selection outcome, and to isolate novel thiamine pyrophosphate riboswitches from a complex library. Artificial riboswitches with excellent characteristics were isolated that exhibit up to 58-fold activation as measured by fluorescent reporter gene assay. PMID:19190095

Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

NASA Astrophysics Data System (ADS)

Younis, Adnan; Chu, Dewei; Li, Sean

2015-09-01

Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective.

Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

PubMed Central

Younis, Adnan; Chu, Dewei; Li, Sean

2015-01-01

Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective. PMID:26324073

Performance of a 10 kV, 625 kA, 85 kJ energy discharge module utilizing a solid dielectric switch

NASA Astrophysics Data System (ADS)

Richardson, R. A.; Cravey, W. R.; Goerz, D. A.

We have designed and tested an 87-kJ energy discharge system consisting of two 720-(mu)F, 11-kV capacitors discharged through parallel coaxial cables into a 250 nH load. Data will be presented on the current and voltage waveforms, with calculated values of the system inductance and resistance. The bank uses a solid dielectric switch punctured by an explosive bridge wire (EBW) to initiate the discharge. With the capacitors charged to 9 kV, a 625-kA peak current is sent through the load with a ringing frequency of 6.8 kHz. The coaxial cables used to transmit the current to the load are 3 m in length. Both RG-217 and YK-198 cable types were tested, which have an inductance of 74 nH/ft and 35 nH/ft respectively. Normal operation requires that each cable carry 52 kA. The cables were tested to 100 kA each by connecting fewer cables to the load, and gradually increasing the charge voltage. The solid dielectric switch was chosen for high reliability. Details of the switch will be describes and data on its performance will be presented.

Nonlinear performance of asymmetric coupler based on dual-core photonic crystal fiber: Towards sub-nanojoule solitonic ultrafast all-optical switching

NASA Astrophysics Data System (ADS)

Curilla, L.; Astrauskas, I.; Pugzlys, A.; Stajanca, P.; Pysz, D.; Uherek, F.; Baltuska, A.; Bugar, I.

2018-05-01

We demonstrate ultrafast soliton-based nonlinear balancing of dual-core asymmetry in highly nonlinear photonic crystal fiber at sub-nanojoule pulse energy level. The effect of fiber asymmetry was studied experimentally by selective excitation and monitoring of individual fiber cores at different wavelengths between 1500 nm and 1800 nm. Higher energy transfer rate to non-excited core was observed in the case of fast core excitation due to nonlinear asymmetry balancing of temporal solitons, which was confirmed by the dedicated numerical simulations based on the coupled generalized nonlinear Schrödinger equations. Moreover, the simulation results correspond qualitatively with the experimentally acquired dependences of the output dual-core extinction ratio on excitation energy and wavelength. In the case of 1800 nm fast core excitation, narrow band spectral intensity switching between the output channels was registered with contrast of 23 dB. The switching was achieved by the change of the excitation pulse energy in sub-nanojoule region. The performed detailed analysis of the nonlinear balancing of dual-core asymmetry in solitonic propagation regime opens new perspectives for the development of ultrafast nonlinear all-optical switching devices.

Machine-Learning Based Channel Quality and Stability Estimation for Stream-Based Multichannel Wireless Sensor Networks.

PubMed

Rehan, Waqas; Fischer, Stefan; Rehan, Maaz

2016-09-12

Wireless sensor networks (WSNs) have become more and more diversified and are today able to also support high data rate applications, such as multimedia. In this case, per-packet channel handshaking/switching may result in inducing additional overheads, such as energy consumption, delays and, therefore, data loss. One of the solutions is to perform stream-based channel allocation where channel handshaking is performed once before transmitting the whole data stream. Deciding stream-based channel allocation is more critical in case of multichannel WSNs where channels of different quality/stability are available and the wish for high performance requires sensor nodes to switch to the best among the available channels. In this work, we will focus on devising mechanisms that perform channel quality/stability estimation in order to improve the accommodation of stream-based communication in multichannel wireless sensor networks. For performing channel quality assessment, we have formulated a composite metric, which we call channel rank measurement (CRM), that can demarcate channels into good, intermediate and bad quality on the basis of the standard deviation of the received signal strength indicator (RSSI) and the average of the link quality indicator (LQI) of the received packets. CRM is then used to generate a data set for training a supervised machine learning-based algorithm (which we call Normal Equation based Channel quality prediction (NEC) algorithm) in such a way that it may perform instantaneous channel rank estimation of any channel. Subsequently, two robust extensions of the NEC algorithm are proposed (which we call Normal Equation based Weighted Moving Average Channel quality prediction (NEWMAC) algorithm and Normal Equation based Aggregate Maturity Criteria with Beta Tracking based Channel weight prediction (NEAMCBTC) algorithm), that can perform channel quality estimation on the basis of both current and past values of channel rank estimation. In the end, simulations are made using MATLAB, and the results show that the Extended version of NEAMCBTC algorithm (Ext-NEAMCBTC) outperforms the compared techniques in terms of channel quality and stability assessment. It also minimizes channel switching overheads (in terms of switching delays and energy consumption) for accommodating stream-based communication in multichannel WSNs.

Machine-Learning Based Channel Quality and Stability Estimation for Stream-Based Multichannel Wireless Sensor Networks

PubMed Central

Rehan, Waqas; Fischer, Stefan; Rehan, Maaz

2016-01-01

Wireless sensor networks (WSNs) have become more and more diversified and are today able to also support high data rate applications, such as multimedia. In this case, per-packet channel handshaking/switching may result in inducing additional overheads, such as energy consumption, delays and, therefore, data loss. One of the solutions is to perform stream-based channel allocation where channel handshaking is performed once before transmitting the whole data stream. Deciding stream-based channel allocation is more critical in case of multichannel WSNs where channels of different quality/stability are available and the wish for high performance requires sensor nodes to switch to the best among the available channels. In this work, we will focus on devising mechanisms that perform channel quality/stability estimation in order to improve the accommodation of stream-based communication in multichannel wireless sensor networks. For performing channel quality assessment, we have formulated a composite metric, which we call channel rank measurement (CRM), that can demarcate channels into good, intermediate and bad quality on the basis of the standard deviation of the received signal strength indicator (RSSI) and the average of the link quality indicator (LQI) of the received packets. CRM is then used to generate a data set for training a supervised machine learning-based algorithm (which we call Normal Equation based Channel quality prediction (NEC) algorithm) in such a way that it may perform instantaneous channel rank estimation of any channel. Subsequently, two robust extensions of the NEC algorithm are proposed (which we call Normal Equation based Weighted Moving Average Channel quality prediction (NEWMAC) algorithm and Normal Equation based Aggregate Maturity Criteria with Beta Tracking based Channel weight prediction (NEAMCBTC) algorithm), that can perform channel quality estimation on the basis of both current and past values of channel rank estimation. In the end, simulations are made using MATLAB, and the results show that the Extended version of NEAMCBTC algorithm (Ext-NEAMCBTC) outperforms the compared techniques in terms of channel quality and stability assessment. It also minimizes channel switching overheads (in terms of switching delays and energy consumption) for accommodating stream-based communication in multichannel WSNs. PMID:27626429

Switch-task performance in rats is disturbed by 12 h of sleep deprivation but not by 12 h of sleep fragmentation.

PubMed

Leenaars, Cathalijn H C; Joosten, Ruud N J M A; Zwart, Allard; Sandberg, Hans; Ruimschotel, Emma; Hanegraaf, Maaike A J; Dematteis, Maurice; Feenstra, Matthijs G P; van Someren, Eus J W

2012-02-01

Task-switching is an executive function involving the prefrontal cortex. Switching temporarily attenuates the speed and/or accuracy of performance, phenomena referred to as switch costs. In accordance with the idea that prefrontal function is particularly sensitive to sleep loss, switch-costs increase during prolonged waking in humans. It has been difficult to investigate the underlying neurobiological mechanisms because of the lack of a suitable animal model. Here, we introduce the first switch-task for rats and report the effects of sleep deprivation and inactivation of the medial prefrontal cortex. Rats were trained to repeatedly switch between 2 stimulus-response associations, indicated by the presentation of a visual or an auditory stimulus. These stimulus-response associations were offered in blocks, and performance was compared for the first and fifth trials of each block. Performance was tested after exposure to 12 h of total sleep deprivation, sleep fragmentation, and their respective movement control conditions. Finally, it was tested after pharmacological inactivation of the medial prefrontal cortex. Controlled laboratory settings. 15 male Wistar rats. Both accuracy and latency showed switch-costs at baseline. Twelve hours of total sleep deprivation, but not sleep fragmentation, impaired accuracy selectively on the switch-trials. Inactivation of the medial prefrontal cortex by local neuronal inactivation resulted in an overall decrease in accuracy. We developed and validated a switch-task that is sensitive to sleep deprivation. This introduces the possibility for in-depth investigations on the neurobiological mechanisms underlying executive impairments after sleep disturbance in a rat model.

Analysis and design of continuous class-E power amplifier at sub-nominal condition

NASA Astrophysics Data System (ADS)

Chen, Peng; Yang, Kai; Zhang, Tianliang

2017-12-01

The continuous class-E power amplifier at sub-nominal condition is proposed in this paper. The class-E power amplifier at continuous mode means it can be high efficient on a series matching networks while at sub-nominal condition means it only requires the zero-voltage-switching condition. Comparing with the classical class-E power amplifier, the proposed design method releases two additional design freedoms, which increase the class-E power amplifier's design flexibility. Also, the proposed continuous class-E power amplifier at sub-nominal condition can perform high efficiency over a broad bandwidth. The performance study of the continuous class-E power amplifier at sub-nominal condition is derived and the design procedure is summarised. The normalised switch voltage and current waveforms are investigated. Furthermore, the influences of different sub-nominal conditions on the power losses of the switch-on resistor and the output power capability are also discussed. A broadband continuous class-E power amplifier based on a Gallium Nitride (GaN) transistor is designed and testified to verify the proposed design methodology. The measurement results show, it can deliver 10-15 W output power with 64-73% power-added efficiency over 1.4-2.8 GHz.

On the impact of fiber-delay-lines (FDL) in an all-optical network (AON) bottleneck without wavelength conversion

NASA Astrophysics Data System (ADS)

Argibay-Losada, Pablo Jesus; Sahin, Gokhan

2014-08-01

Random access memories (RAM) are fundamental in conventional electronic switches and routers to manage short-term congestion and to decrease data loss probabilities. Switches in all-optical networks (AONs), however, do not have access to optical RAM, and therefore are prone to much higher loss levels than their electronic counterparts. Fiber-delay-lines (FDLs), able to delay an optical data packet a fixed amount of time, have been proposed in the literature as a means to alleviate those high loss levels. However, they are extremely bulky to manage, so their usage introduces a trade-off between practicality and performance in the design and operation of the AON. In this paper we study the influence that FDLs have in the performance of flows crossing an all-optical switch that acts as their bottleneck. We show how extremely low numbers of FDLs (e.g., 1 or 2) can help in reducing losses by several orders of magnitude in several illustrative scenarios with high aggregation levels. Our results therefore suggest that FDLs can be a practical means of dealing with congestion in AONs in the absence of optical RAM buffers or of suitable data interchange protocols specifically designed for AONs.

Synthesis, physical properties and simulation of thermo-optic switch based on azo benzothiazole heterocyclic polymer

NASA Astrophysics Data System (ADS)

Qiu, Fengxian; Chen, Caihong; Zhou, Qiaolan; Cao, Zhijuan; Cao, Guorong; Guan, Yijun; Yang, Dongya

2014-05-01

A chromophore molecule 4-[(benzothiazole-2-yl)diazenyl]phenyl-1,3-diamine (BTPD) was prepared with 2-amino benzothiazole and m-phenylenediamine by diazo-coupling reaction. Then, the BTPD was polymerized with polyether polyol (NJ-220) and isophorone diisocyanate (IPDI) to obtain novel azo benzothiazole polyurethane-urea (BTPUU). The chemical structures of BTPD and BTPUU were characterized by FT-IR and UV-visible spectroscopy. The thermal and mechanical properties of BTPUU film were investigated. The refractive index and transmission loss of BTPUU film were measured at different temperatures and different laser wavelengths (532 nm, 650 nm and 850 nm) by an attenuated total reflection (ATR) technique and CCD digital imaging devices. The thermo-optic coefficients of BTPUU are -4.7086 × 10-4 °C-1 (532 nm), -6.5257 × 10-4 °C-1 (650 nm) and -5.1029 × 10-4 °C-1 (850 nm), respectively. A Y-branch switch and Mach-Zehnder interferometer (MZI) thermo-optic switches based on thermo-optic effect were proposed and the performances of the switches were simulated, respectively. The results show that the power consumption of the Y-branch thermo-optic switch is only 3.28 mW. The response times of Y-branch and MZI switches are 8.0 ms and 2.0 ms, respectively. The results indicate that the prepared BTPUU has high potential for the applications of the Y-branch digital optical switch (DOS), MZI thermo-optic switch, directional coupler (DC) switch and optical modulators.

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

PubMed Central

Rana, Anwar Manzoor; Akbar, Tahira; Ismail, Muhammad; Ahmad, Ejaz; Hussain, Fayyaz; Talib, Ijaz; Imran, Muhammad; Mehmood, Khalid; Iqbal, Khalid; Nadeem, M. Younus

2017-01-01

Resistance switching characteristics of CeO2/Ti/CeO2 tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO2/Ti/CeO2/Pt reveal better resistive switching performance instead of Ti/CeO2/Ti/CeO2/Pt memory stacks. As compared to the Ti/CeO2 interface, much better ability of TaN/CeO2 interface to store and exchange plays a key role in the RS performance improvement, including lower forming/SET voltages, large memory window (~102) and no significant data degradation during endurance test of >104 switching cycles. The formation of TaON thinner interfacial layer between TaN TE and CeO2 film is found to be accountable for improved resistance switching behavior. Partial charge density of states is analyzed using density functional theory. It is found that the conductive filaments formed in CeO2 based devices is assisted by interstitial Ti dopant. Better stability and reproducibility in cycle-to-cycle (C2C) resistance distribution and Vset/Vreset uniformity were achieved due to the modulation of current conduction mechanism from Ohmic in low field region to Schottky emission in high field region. PMID:28079056

Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell Area.

PubMed

Yoon, Jung Ho; Yoo, Sijung; Song, Seul Ji; Yoon, Kyung Jean; Kwon, Dae Eun; Kwon, Young Jae; Park, Tae Hyung; Kim, Hye Jin; Shao, Xing Long; Kim, Yumin; Hwang, Cheol Seong

2016-07-20

To replace or succeed the present NAND flash memory, resistive switching random access memory (ReRAM) should be implemented in the vertical-type crossbar array configuration. The ReRAM cell must have a highly reproducible resistive switching (RS) performance and an electroforming-free, self-rectifying, low-power-consumption, multilevel-switching, and easy fabrication process with a deep sub-μm(2) cell area. In this work, a Pt/Ta2O5/HfO2-x/TiN RS memory cell fabricated in the form of a vertical-type structure was presented as a feasible contender to meet the above requirements. While the fundamental RS characteristics of this material based on the electron trapping/detrapping mechanisms have been reported elsewhere, the influence of the cell scaling size to 0.34 μm(2) on the RS performance by adopting the vertical integration scheme was carefully examined in this work. The smaller cell area provided much better switching uniformity while all the other benefits of this specific material system were preserved. Using the overstressing technique, the nature of RS through the localized conducting path was further examined, which elucidated the fundamental difference between the present material system and the general ionic-motion-related bipolar RS mechanism.

Switching State-Feedback LPV Control with Uncertain Scheduling Parameters

NASA Technical Reports Server (NTRS)

He, Tianyi; Al-Jiboory, Ali Khudhair; Swei, Sean Shan-Min; Zhu, Guoming G.

2017-01-01

This paper presents a new method to design Robust Switching State-Feedback Gain-Scheduling (RSSFGS) controllers for Linear Parameter Varying (LPV) systems with uncertain scheduling parameters. The domain of scheduling parameters are divided into several overlapped subregions to undergo hysteresis switching among a family of simultaneously designed LPV controllers over the corresponding subregion with the guaranteed H-infinity performance. The synthesis conditions are given in terms of Parameterized Linear Matrix Inequalities that guarantee both stability and performance at each subregion and associated switching surfaces. The switching stability is ensured by descent parameter-dependent Lyapunov function on switching surfaces. By solving the optimization problem, RSSFGS controller can be obtained for each subregion. A numerical example is given to illustrate the effectiveness of the proposed approach over the non-switching controllers.

Isolation and purification of diastereoisomeric flavonolignans from silymarin by binary-column recycling preparative high-performance liquid chromatography.

PubMed

Zhao, Weiquan; Yang, Guang; Zhong, Fanyi; Yang, Nan; Zhao, Xin; Qi, Yunpeng; Fan, Guorong

2014-09-01

Silymarin extracted from Silybum marianum (L.) Gaertn consists of a large number of flavonolignans, of which diastereoisomeric flavonolignans including silybin A and silybin B, and isosilybin A and isosilybin B are the main bioactive components, whose preparation from the crude extracts is still a difficult task. In this work, binary-column recycling preparative high-performance liquid chromatography systems without sample loop trapping, where two columns were switched alternately via one or two six-port switching valves, were established and successfully applied to the isolation and purification of the four diastereoisomeric flavonolignans from silymarin. The proposed system showed significant advantages over conventional preparative high-performance liquid chromatography with a single column in increasing efficiency and reducing the cost. To obtain the same amounts of products, the proposed system spends only one tenth of the time that the conventional system spends, and needs only one eleventh of the solvent that the conventional system consumes. Using the proposed system, the four diastereoisomers were successfully isolated from silymarin with purities over 98%. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Adaptive packet switch with an optical core (demonstrator)

NASA Astrophysics Data System (ADS)

Abdo, Ahmad; Bishtein, Vadim; Clark, Stewart A.; Dicorato, Pino; Lu, David T.; Paredes, Sofia A.; Taebi, Sareh; Hall, Trevor J.

2004-11-01

A three-stage opto-electronic packet switch architecture is described consisting of a reconfigurable optical centre stage surrounded by two electronic buffering stages partitioned into sectors to ease memory contention. A Flexible Bandwidth Provision (FBP) algorithm, implemented on a soft-core processor, is used to change the configuration of the input sectors and optical centre stage to set up internal paths that will provide variable bandwidth to serve the traffic. The switch is modeled by a bipartite graph built from a service matrix, which is a function of the arriving traffic. The bipartite graph is decomposed by solving an edge-colouring problem and the resulting permutations are used to configure the switch. Simulation results show that this architecture exhibits a dramatic reduction of complexity and increased potential for scalability, at the price of only a modest spatial speed-up k, 1

Multi-line triggering and interdigitated electrode structure for photoconductive semiconductor switches

DOEpatents

Mar, Alan [Albuquerque, NM; Zutavern, Fred J [Albuquerque, NM; Loubriel, Guillermo [Albuquerque, NM

2007-02-06

An improved photoconductive semiconductor switch comprises multiple-line optical triggering of multiple, high-current parallel filaments between the switch electrodes. The switch can also have a multi-gap, interdigitated electrode for the generation of additional parallel filaments. Multi-line triggering can increase the switch lifetime at high currents by increasing the number of current filaments and reducing the current density at the contact electrodes in a controlled manner. Furthermore, the improved switch can mitigate the degradation of switching conditions with increased number of firings of the switch.

Arc-Free High-Power dc Switch

NASA Technical Reports Server (NTRS)

Miller, W. N.; Gray, O. E.

1982-01-01

Hybrid switch allows high-power direct current to be turned on and off without arcing or erosion. Switch consists of bank of transistors in parallel with mechanical contacts. Transistor bank makes and breaks switched circuit; contacts carry current only during steady-state "on" condition. Designed for Space Shuttle orbiter, hybrid switch can be used also in high-power control circuits in aircraft, electric autos, industrial furnaces, and solar-cell arrays.

High speed Deans switch for low duty cycle comprehensive two-dimensional gas chromatography.

PubMed

Ghosh, Abhijit; Bates, Carly T; Seeley, Stacy K; Seeley, John V

2013-05-24

A new high-speed valve-based modulator has been designed and tested for use in comprehensive two-dimensional gas chromatography (GC×GC). The modulator is a Deans switch constructed from two micro-volume fittings and a solenoid valve. Modulator performance was characterized over a wide range of device settings including the magnitude of the switching flow, the gap between the tips of the primary and secondary column, the primary column flow rate, and the carrier gas identity. Under optimized conditions, the modulator was found to be capable of generating narrow pulses (<50ms) of primary effluent with a 2mL/min secondary column flow. This capability will ultimately allow the modulator to be used with GC×GC separations employing a wide range of detectors and secondary column geometries. The main disadvantage of this modulator is that it employs a low sampling duty cycle, and thus it produces separations with sensitivities that are lower than those produced with thermal modulators or differential flow modulators. The efficacy of the new high-speed Deans switch modulator was demonstrated through the GC×GC separation of a hydrocarbon standard and gasoline. Precise quantitation of individual components was possible provided the modulation ratio was kept greater than 2.0. Copyright © 2013 Elsevier B.V. All rights reserved.

Autism-relevant traits interact with temporoparietal junction stimulation effects on social cognition: a high-definition transcranial direct current stimulation and electroencephalography study.

PubMed

Donaldson, Peter H; Kirkovski, Melissa; Rinehart, Nicole J; Enticott, Peter G

2018-03-01

The temporoparietal junction (TPJ) is implicated in mental and emotional state attribution, processes associated with autism-relevant traits. Transcranial direct current stimulation (tDCS) to the TPJ can influence social-cognitive performance. However, associations with electrophysiology and autism-relevant traits remain relatively unexamined. This study had two aims: first, exploring links between Autism-Spectrum Quotient (AQ) scores and social-cognitive performance; second, examining interactions between AQ scores and high-definition-tDCS (HD-tDCS) applied to the right TPJ in terms of mental/emotional state attribution and neurophysiological outcomes. Fifty-three participants completed mental/emotional state attribution tasks before and after HD-tDCS. Pre-stimulation mental state attribution accuracy was reduced in participants with higher AQ Switching scores. Cathodal stimulation was associated with reduced emotion attribution performance in participants with higher AQ Switching and AQ Social scores (the latter at trend-level). Anodal stimulation more frequently interacted with AQ Social scores in terms of neurophysiology, in particular regarding reduced delta power in the left compared to right TPJ, and trend-level positive interactions with P100 and P300 latencies during the emotion recognition task. Elements of attention/switching (AQ Switching) may subserve or underpin elements of social cognition (AQ Social), and cathodal and anodal stimulation may have differing effects depending on trait levels in these domains. This study makes an important and original contribution in terms of increasing understanding of how such trait-level variation might interact with the effects of tDCS and also extending previous studies with regard to understanding potential roles of the rTPJ in both attention and social cognition and how autism-relevant traits might influence TPJ function. © 2017 Federation of European Neuroscience Societies and John Wiley & Sons Ltd.

Trading off switch costs and stimulus availability benefits: An investigation of voluntary task-switching behavior in a predictable dynamic multitasking environment.

PubMed

Mittelstädt, Victor; Miller, Jeff; Kiesel, Andrea

2018-03-09

In the present study, we introduce a novel, self-organized task-switching paradigm that can be used to study more directly the determinants of switching. Instead of instructing participants to randomly switch between tasks, as in the classic voluntary task-switching paradigm (Arrington & Logan, 2004), we instructed participants to optimize their task performance in a voluntary task-switching environment in which the stimulus associated with the previously selected task appeared in each trial after a delay. Importantly, the stimulus onset asynchrony (SOA) increased further with each additional repetition of this task, whereas the stimulus needed for a task switch was always immediately available. We conducted two experiments with different SOA increments (i.e., Exp. 1a = 50 ms, Exp. 1b = 33 ms) to see whether this procedure would induce switching behavior, and we explored how people trade off switch costs against the increasing availability of the stimulus needed for a task repetition. We observed that participants adapted their behavior to the different task environments (i.e., SOA increments) and that participants switched tasks when the SOA in task switches approximately matched the switch costs. Moreover, correlational analyses indicated relations between individual switch costs and individual switch rates across participants. Together, these results demonstrate that participants were sensitive to the increased availability of switch stimuli in deciding whether to switch or to repeat, which in turn demonstrates flexible adaptive task selection behavior. We suggest that performance limitations in task switching interact with the task environment to influence switching behavior.

Noise reduction in heat-assisted magnetic recording of bit-patterned media by optimizing a high/low Tc bilayer structure

NASA Astrophysics Data System (ADS)

Muthsam, O.; Vogler, C.; Suess, D.

2017-12-01

It is assumed that heat-assisted magnetic recording is the recording technique of the future. For pure hard magnetic grains in high density media with an average diameter of 5 nm and a height of 10 nm, the switching probability is not sufficiently high for the use in bit-patterned media. Using a bilayer structure with 50% hard magnetic material with low Curie temperature and 50% soft magnetic material with high Curie temperature to obtain more than 99.2% switching probability leads to very large jitter. We propose an optimized material composition to reach a switching probability of Pswitch > 99.2% and simultaneously achieve the narrow transition jitter of pure hard magnetic material. Simulations with a continuous laser spot were performed with the atomistic simulation program VAMPIRE for a single cylindrical recording grain with a diameter of 5 nm and a height of 10 nm. Different configurations of soft magnetic material and different amounts of hard and soft magnetic material were tested and discussed. Within our analysis, a composition with 20% soft magnetic and 80% hard magnetic material reaches the best results with a switching probability Pswitch > 99.2%, an off-track jitter parameter σoff,80/20 = 0.46 nm and a down-track jitter parameter σdown,80/20 = 0.49 nm.

A Ku band 5 bit MEMS phase shifter for active electronically steerable phased array applications

NASA Astrophysics Data System (ADS)

Sharma, Anesh K.; Gautam, Ashu K.; Farinelli, Paola; Dutta, Asudeb; Singh, S. G.

2015-03-01

The design, fabrication and measurement of a 5 bit Ku band MEMS phase shifter in different configurations, i.e. a coplanar waveguide and microstrip, are presented in this work. The development architecture is based on the hybrid approach of switched and loaded line topologies. All the switches are monolithically manufactured on a 200 µm high resistivity silicon substrate using 4 inch diameter wafers. The first three bits (180°, 90° and 45°) are realized using switched microstrip lines and series ohmic MEMS switches whereas the fourth and fifth bits (22.5° and 11.25°) consist of microstrip line sections loaded by shunt ohmic MEMS devices. Individual bits are fabricated and evaluated for performance and the monolithic device is a 5 bit Ku band (16-18 GHz) phase shifter with very low average insertion loss of the order of 3.3 dB and a return loss better than 15 dB over the 32 states with a chip area of 44 mm2. A total phase shift of 348.75° with phase accuracy within 3° is achieved over all of the states. The performance of individual bits has been optimized in order to achieve an integrated performance so that they can be implemented into active electronically steerable antennas for phased array applications.

Design and development of high performance solar photovoltaic inverter with advanced modulation techniques to improve power quality

NASA Astrophysics Data System (ADS)

Alexander Stonier, Albert

2017-02-01

In addition to the focus towards growing demand on electrical energy due to the increase in population, industries, consumer loads, etc., the need for improving the quality of electrical power also needs to be considered. The design and development of solar photovoltaic (PV) inverter with reduced harmonic distortions is proposed. Unlike the conventional solar PV inverters, the proposed inverter provides the advantages of reduced harmonic distortions thereby intend towards the improvement in power quality. This inverter comprises of multiple stages which provides the required 230VRMS, 50 Hz in spite of variations in solar PV due to temperature and irradiance. The reduction of harmonics is governed by applying proper switching sequences required for the inverter switches. The detailed analysis is carried out by employing different switching techniques and observing its performance. With a separate mathematical model for a solar PV, simulations are performed in MATLAB software. To show the advantage of the system proposed, a 3 kWp photovoltaic plant coupled with multilevel inverter is demonstrated in hardware. The novelty resides in the design of a single chip controller which can provide the switching sequence based on the requirement and application. As per the results obtained, the solar-fed multistage inverter improves the quality of power which makes this inverter suitable for both stand-alone and grid-connected systems.

High-speed optical switch fabrics with large port count.

PubMed

Yeo, Yong-Kee; Xu, Zhaowen; Wang, Dawei; Liu, Jianguo; Wang, Yixin; Cheng, Tee-Hiang

2009-06-22

We report a novel architecture that can be used to construct optical switch fabrics with very high port count and nanoseconds switching speed. It is well known that optical switch fabrics with very fast switching time and high port count are challenging to realize. Currently, one of the most promising solutions is based on a combination of wavelength-tunable lasers and the arrayed waveguide grating router (AWGR). To scale up the number of ports in such switches, a direct method is to use AWGRs with a high channel count. However, such AWGRs introduce very large crosstalk noise due to the close wavelength channel spacing. In this paper, we propose an architecture for realizing a high-port count optical switch fabric using a combination of low-port count AWGRs, optical ON-OFF gates and WDM couplers. Using this new methodology, we constructed a proof-of concept experiment to demonstrate the feasibility of a 256 x 256 optical switch fabric. To our knowledge, this port count is the highest ever reported for switch fabrics of this type.

Context Switching with Multiple Register Windows: A RISC Performance Study

NASA Technical Reports Server (NTRS)

Konsek, Marion B.; Reed, Daniel A.; Watcharawittayakul, Wittaya

1987-01-01

Although previous studies have shown that a large file of overlapping register windows can greatly reduce procedure call/return overhead, the effects of register windows in a multiprogramming environment are poorly understood. This paper investigates the performance of multiprogrammed, reduced instruction set computers (RISCs) as a function of window management strategy. Using an analytic model that reflects context switch and procedure call overheads, we analyze the performance of simple, linearly self-recursive programs. For more complex programs, we present the results of a simulation study. These studies show that a simple strategy that saves all windows prior to a context switch, but restores only a single window following a context switch, performs near optimally.

Liquid Nitrogen Temperature Operation of a Switching Power Converter

NASA Technical Reports Server (NTRS)

Ray, Biswajit; Gerber, Scott S.; Patterson, Richard L.; Myers, Ira T.

1995-01-01

The performance of a 42/28 V, 175 W, 50 kHz pulse-width modulated buck dc/dc switching power converter at liquid nitrogen temperature (LNT) is compared with room temperature operation. The power circuit as well as the control circuit of the converter, designed with commercially available components, were operated at LNT and resulted in a slight improvement in converter efficiency. The improvement in power MOSFET operation was offset by deteriorating performance of the output diode rectifier at LNT. Performance of the converter could be further improved at low temperatures by using only power MOSFET's as switches. The use of a resonant topology will further improve the circuit performance by reducing the switching noise and loss.

Recent progress on fabrication of memristor and transistor-based neuromorphic devices for high signal processing speed with low power consumption

NASA Astrophysics Data System (ADS)

Hadiyawarman; Budiman, Faisal; Goldianto Octensi Hernowo, Detiza; Pandey, Reetu Raj; Tanaka, Hirofumi

2018-03-01

The advanced progress of electronic-based devices for artificial neural networks and recent trends in neuromorphic engineering are discussed in this review. Recent studies indicate that the memristor and transistor are two types of devices that can be implemented as neuromorphic devices. The electrical switching characteristics and physical mechanism of neuromorphic devices based on metal oxide, metal sulfide, silicon, and carbon materials are broadly covered in this review. Moreover, the switching performance comparison of several materials mentioned above are well highlighted, which would be useful for the further development of memristive devices. Recent progress in synaptic devices and the application of a switching device in the learning process is also discussed in this paper.

A high throughput liquid crystal light shutter for unpolarized light using polymer polarization gratings

NASA Astrophysics Data System (ADS)

Komanduri, Ravi K.; Lawler, Kris F.; Escuti, Michael J.

2011-05-01

We report on a broadband, diffractive, light shutter with the ability to modulate unpolarized light. This polarizer-free approach employs a conventional liquid crystal (LC) switch, combined with broadband Polarization Gratings (PGs) formed with polymer LC materials. The thin-film PGs act as diffractive polarizing beam-splitters, while the LC switch operates on both orthogonal polarization states simultaneously. As an initial experimental proof-of- concept for unpolarized light with +/-7° aperture, we utilize a commercial twisted-nematic LC switch and our own polymer PGs to achieve a peak transmittance of 80% and peak contrast ratio of 230:1. We characterize the optoelectronic performance, discuss the limitations, and evaluate its use in potential nonmechanical shutter applications (imaging and non-imaging).

Modeling texture transitions in cholesteric liquid crystal droplets

NASA Astrophysics Data System (ADS)

Selinger, Robin; Gimenez-Pinto, Vianney; Lu, Shin-Ying; Selinger, Jonathan; Konya, Andrew

2012-02-01

Cholesteric liquid crystals can be switched reversibly between planar and focal-conic textures, a property enabling their application in bistable displays, liquid crystal writing tablets, e-books, and color switching ``e-skins.'' To explore voltage-pulse induced switching in cholesteric droplets, we perform simulation studies of director dynamics in three dimensions. Electrostatics calculations are solved at each time step using an iterative relaxation method. We demonstrate that as expected, a low amplitude pulse drives the transition from planar to focal conic, while a high amplitude pulse drives the transition from focal conic back to the planar state. We use the model to explore the effects of droplet shape, aspect ratio, and anchoring conditions, with the goal of minimizing both response time and energy consumption.

Circuit-Switched Memory Access in Photonic Interconnection Networks for High-Performance Embedded Computing

DTIC Science & Technology

2010-07-22

dependent , providing a natural bandwidth match between compute cores and the memory subsystem. • High Bandwidth Dcnsity. Waveguides crossing the chip...simulate this memory access architecture on a 2S6-core chip with a concentrated 64-node network lIsing detailed traces of high-performance embedded...memory modulcs, wc placc memory access poi nts (MAPs) around the pcriphery of the chip connected to thc nctwork. These MAPs, shown in Figure 4, contain

High Voltage, Solid-State Switch for Fusion Science Applications

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Prager, James; Miller, Kenneth E.; Slobodov, Ilia

2017-10-01

Eagle Harbor Technologies, Inc. is developing a series stack of solid-state switches to produce a single high voltage switch that can be operated at over 35 kV. During the Phase I program, EHT developed two high voltage switch modules: one with isolated power gate drive and a second with inductively coupled gate drive. These switches were tested at 15 kV and up to 300 A at switching frequencies up to 500 kHz for 10 ms bursts. Robust switching was demonstrated for both IGBTs and SiC MOSFETs. During the Phase II program, EHT will develop a higher voltage switch (>35 kV) that will be suitable for high pulsed and average power applications. EHT will work with LTX to utilize these switches to design, build, and test a pulsed magnetron driver that will be delivered to LTX before the completion of the program. EHT will present data from the Phase I program as well as preliminary results from the start of the Phase II program. With support of DOE SBIR.

State Recognition of High Voltage Isolation Switch Based on Background Difference and Iterative Search

NASA Astrophysics Data System (ADS)

Xu, Jiayuan; Yu, Chengtao; Bo, Bin; Xue, Yu; Xu, Changfu; Chaminda, P. R. Dushantha; Hu, Chengbo; Peng, Kai

2018-03-01

The automatic recognition of the high voltage isolation switch by remote video monitoring is an effective means to ensure the safety of the personnel and the equipment. The existing methods mainly include two ways: improving monitoring accuracy and adopting target detection technology through equipment transformation. Such a method is often applied to specific scenarios, with limited application scope and high cost. To solve this problem, a high voltage isolation switch state recognition method based on background difference and iterative search is proposed in this paper. The initial position of the switch is detected in real time through the background difference method. When the switch starts to open and close, the target tracking algorithm is used to track the motion trajectory of the switch. The opening and closing state of the switch is determined according to the angle variation of the switch tracking point and the center line. The effectiveness of the method is verified by experiments on different switched video frames of switching states. Compared with the traditional methods, this method is more robust and effective.

Age-related differences in BOLD modulation to cognitive control costs in a multitasking paradigm: Global switch, local switch, and compatibility-switch costs.

PubMed

Nashiro, Kaoru; Qin, Shuo; O'Connell, Margaret A; Basak, Chandramallika

2018-05-15

It is well documented that older adults recruit additional brain regions compared to those recruited by younger adults while performing a wide variety of cognitive tasks. However, it is unclear how such age-related over-recruitment interacts with different types of cognitive control, and whether this over-recruitment is compensatory. To test this, we used a multitasking paradigm, which allowed us to examine age-related over-activation associated with three types of cognitive costs (i.e., global switch, local switch, compatibility-switch costs). We found age-related impairments in global switch cost (GSC), evidenced by slower response times for maintaining and coordinating two tasks vs. performing only one task. However, no age-related declines were observed in either local switch cost (LSC), a cognitive cost associated with switching between the two tasks while maintaining two task loads, or compatibility-switch cost (CSC), a cognitive cost associated with incompatible vs. compatible stimulus-response mappings across the two tasks. The fMRI analyses allowed for identification of distinct cognitive cost-sensitive brain regions associated with GSC and LSC. In fronto-parietal GSC and LSC regions, older adults' increased activations were associated with poorer performance (greater costs), whereas a reverse relationship was observed in younger adults. Older adults also recruited additional fronto-parietal brain regions outside the cognitive cost-sensitive areas, which was associated with poorer performance or no behavioral benefits. Our results suggest that older adults exhibit a combination of inefficient activation within cognitive cost-sensitive regions, specifically the GSC and LSC regions, and non-compensatory over-recruitment in age-sensitive regions. Age-related declines in global switching, compared to local switching, was observed earlier in old age at both neural and behavioral levels. Copyright © 2018 Elsevier Inc. All rights reserved.

Voltage equaliser for Li-Fe battery

NASA Astrophysics Data System (ADS)

Wu, Jinn-Chang; Jou, Hurng-Liahng; Chuang, Ping-Hao

2013-10-01

In this article, a voltage equaliser is proposed for a battery string with four Li-Fe batteries. The proposed voltage equaliser is developed from a flyback converter, which comprises a transformer, a power electronic switch and a resonant clamped circuit. The transformer contains a primary winding and four secondary windings with the same number of turns connected to each battery. The resonant clamped circuit is for recycling the energy of leakage inductance of the transformer and for performing zero-voltage switching (ZVS) of the power electronic switch. When the power electronic switch is switched on, the energy is stored in the transformer; and when the power electronic switch is switched off, the energy stored in the transformer will automatically charge the battery whose voltage is the lowest. In this way, the voltage of individual batteries in the battery string is balanced. The salient features of the proposed voltage equaliser are that only one switch is used, the energy stored in the leakage inductance of the transformer can be recycled and ZVS is obtained. A prototype is developed and tested to verify the performance of the proposed voltage equaliser. The experimental results show that the proposed voltage equaliser achieves the expected performance.

Electrode erosion properties of gas spark switches for fast linear transformer drivers

NASA Astrophysics Data System (ADS)

Li, Xiaoang; Pei, Zhehao; Zhang, Yuzhao; Liu, Xuandong; Li, Yongdong; Zhang, Qiaogen

2017-12-01

Fast linear transformer drivers (FLTDs) are a popular and potential route for high-power devices employing multiple "bricks" in series and parallel, but they put extremely stringent demands on gas switches. Electrode erosion of FLTD gas switches is a restrictive and unavoidable factor that degrades performance and limits stability. In this paper, we systematically investigated the electrode erosion characteristics of a three-electrode field distortion gas switch under the typical working conditions of FLTD switches, and the discharge current was 7-46 kA with 46-300 ns rise time. A high speed frame camera and a spectrograph were used to capture the expansion process and the spectral emission of the spark channel was used to estimate the current density and the spark temperature, and then the energy fluxes and the external forces on the electrode surface were calculated. A tens of kilo-ampere nanosecond pulse could generate a 1011 W/m2 energy flux injection and 1.3-3.5 MPa external pressure on the electrode surface, resulting in a millimeter-sized erosion crater with the maximum peak height Rz reaching 100 μm magnitude. According to the morphological images by a laser scanning confocal microscope, the erosion crater of a FLTD switch contained three kinds of local morphologies, namely a center boiling region, an overflow region and a sputtering region. In addition, the crater size, the surface roughness, and the mass loss were highly dependent on the current amplitude and the transferred charge. We also observed Morphology Type I and Type II, respectively, with different pulse parameters, which had an obvious influence on surface roughness and mass loss. Finally, the quantitative relationship between the electrode mass loss and the pulse parameter was clarified. The transferred charge and the current amplitude were proved to be the main factors determining the electrode mass loss of a FLTD switch, and a least squares fitting expression for mass loss was also obtained.

High Performance Polymer Memory and Its Formation

DTIC Science & Technology

2007-04-26

the retention time of the device was performed to estimate the barrier height of the charge trap . The activation energy was approximated to be about...characteristics and presented a model to explain the mechanism of electrical switching in the device. By exploiting an electric-field induced charge transfer...electrical current in the high conductivity state would be due to some temperature-independent charge tunneling processes. The IV curves could be

Mechanical design and performance evaluation for plane grating monochromator in a soft X-ray microscopy beamline at SSRF.

PubMed

Gong, Xuepeng; Lu, Qipeng

2015-01-01

A new monochromator is designed to develop a high performance soft X-ray microscopy beamline at Shanghai Synchrotron Radiation Facility (SSRF). But owing to its high resolving power and high accurate spectrum output, there exist many technical difficulties. In the paper presented, as two primary design targets for the monochromator, theoretical energy resolution and photon flux of the beamline are calculated. For wavelength scanning mechanism, primary factors affecting the rotary angle errors are presented, and the measuring results are 0.15'' and 0.17'' for plane mirror and plane grating, which means that it is possible to provide sufficient scanning precision to specific wavelength. For plane grating switching mechanism, the repeatabilities of roll, yaw and pitch angles are 0.08'', 0.12'' and 0.05'', which can guarantee the high accurate switch of the plane grating effectively. After debugging, the repeatability of light spot drift reaches to 0.7'', which further improves the performance of the monochromator. The commissioning results show that the energy resolving power is higher than 10000 at Ar L-edge, the photon flux is higher than 1 × 108 photons/sec/200 mA, and the spatial resolution is better than 30 nm, demonstrating that the monochromator performs very well and reaches theoretical predictions.

Nonuniform traffic spots (NUTS) in multistage interconnection networks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lang, T.; Kurisaki, L.

1990-09-01

The performance of multistage interconnection networks for multiprocessors is degraded when the traffic pattern produces nonuniform congestion in the blocking switches, that is, when there exist nonuniform traffic spots. For some specific patterns the authors evaluate this degradation in performance and propose modifications to the network organization and operation to reduce the degradation. Successful modifications are the use of diverting switches and the extension of the network with additional links. The use of these modifications makes the network more effective for a larger variety of traffic patterns. The authors also consider the case in which the network carries the superpositionmore » of two types of traffic. One type is the high throughput data and instruction traffic, while the other consists of control and I/O packets which are of low throughput but have severe real-time constraints. The authors conclude that diverting switches and networks with additional links are also suitable for assuring low latency for the real-time traffic, especially when using the displacing mode.« less

Pulse switching for high energy lasers

NASA Technical Reports Server (NTRS)

Laudenslager, J. B.; Pacala, T. J. (Inventor)

1981-01-01

A saturable inductor switch for compressing the width and sharpening the rise time of high voltage pulses from a relatively slow rise time, high voltage generator to an electric discharge gas laser (EDGL) also provides a capability for efficient energy transfer from a high impedance primary source to an intermediate low impedance laser discharge network. The switch is positioned with respect to a capacitive storage device, such as a coaxial cable, so that when a charge build-up in the storage device reaches a predetermined level, saturation of the switch inductor releases or switches energy stored in the capactive storage device to the EDGL. Cascaded saturable inductor switches for providing output pulses having rise times of less than ten nanoseconds and a technique for magnetically biasing the saturable inductor switch are disclosed.

Bilingual infants control their languages as they listen

PubMed Central

2017-01-01

Infants growing up in bilingual homes learn two languages simultaneously without apparent confusion or delay. However, the mechanisms that support this remarkable achievement remain unclear. Here, we demonstrate that infants use language-control mechanisms to preferentially activate the currently heard language during listening. In a naturalistic eye-tracking procedure, bilingual infants were more accurate at recognizing objects labeled in same-language sentences (“Find the dog!”) than in switched-language sentences (“Find the chien!”). Measurements of infants’ pupil size over time indicated that this resulted from increased cognitive load during language switches. However, language switches did not always engender processing difficulties: the switch cost was reduced or eliminated when the switch was from the nondominant to the dominant language, and when it crossed a sentence boundary. Adults showed the same patterns of performance as infants, even though target words were simple and highly familiar. Our results provide striking evidence from infancy to adulthood that bilinguals monitor their languages for efficient comprehension. Everyday practice controlling two languages during listening is likely to explain previously observed bilingual cognitive advantages across the lifespan. PMID:28784802

Design and fabrication of pHEMT MMIC switches for IEEE 802.11.a/b/g WLAN applications

NASA Astrophysics Data System (ADS)

Mun, Jae Kyoung; Ji, Hong Gu; Ahn, Hyokyun; Kim, Haecheon; Park, Chong-Ook

2005-08-01

In this paper, we propose a channel structure for a promising switch pHEMT with excellent isolation characteristics based on the distribution of electric field intensity beneath the Schottky contact in the transistor. Using the proposed device channel structure, SPST and SPDT switches were designed and fabricated, applicable to 2.4 GHz and 5.8 GHz WLAN systems. We discuss the relationship between dc characteristics and switch parameters in this paper in detail. The developed SPST switch exhibits a low insertion loss of 0.26 dB and a high isolation of 34.3 dB with a control voltage of 0 V/-3 V at 5.8 GHz. The SPDT also shows a good performance of 0.85 dB insertion loss and 31.5 dB isolation under the same conditions. The measured power-handling capability at 2.4 GHz reveals that the SPDT has an output power of 27 dBm at the 1 dB compression point and a third-order intercept point of more than 46 dBm.

Adaptation of superconducting fault current limiter to high-speed reclosing

NASA Astrophysics Data System (ADS)

Koyama, T.; Yanabu, S.

2009-10-01

Using a high temperature superconductor, we constructed and tested a model superconducting fault current limiter (SFCL). The superconductor might break in some cases because of its excessive generation of heat. Therefore, it is desirable to interrupt early the current that flows to superconductor. So, we proposed the SFCL using an electromagnetic repulsion switch which is composed of a superconductor, a vacuum interrupter and a by-pass coil, and its structure is simple. Duration that the current flow in the superconductor can be easily minimized to the level of less than 0.5 cycle using this equipment. On the other hand, the fault current is also easily limited by large reactance of the parallel coil. There is duty of high-speed reclosing after interrupting fault current in the electric power system. After the fault current is interrupted, the back-up breaker is re-closed within 350 ms. So, the electromagnetic repulsion switch should return to former state and the superconductor should be recovered to superconducting state before high-speed reclosing. Then, we proposed the SFCL using an electromagnetic repulsion switch which employs our new reclosing function. We also studied recovery time of the superconductor, because superconductor should be recovered to superconducting state within 350 ms. In this paper, the recovery time characteristics of the superconducting wire were investigated. Also, we combined the superconductor with the electromagnetic repulsion switch, and we did performance test. As a result, a high-speed reclosing within 350 ms was proven to be possible.

Stable nonlinear Mach-Zehnder fiber switch

DOEpatents

Digonnet, Michel J. F.; Shaw, H. John; Pantell, Richard H.; Sadowski, Robert W.

1999-01-01

An all-optical fiber switch is implemented within a short Mach-Zehnder interferometer configuration. The Mach-Zehnder switch is constructed to have a high temperature stability so as to minimize temperature gradients and other thermal effects which result in undesirable instability at the output of the switch. The Mach-Zehnder switch of the preferred embodiment is advantageously less than 2 cm in length between couplers to be sufficiently short to be thermally stable, and full switching is accomplished by heavily doping one or both of the arms between the couplers so as to provide a highly nonlinear region within one or both of the arms. A pump input source is used to affect the propagation characteristics of one of the arms to control the output coupling ratio of the switch. Because of the high nonlinearity of the pump input arm, low pump powers can be used, thereby alleviating difficulties and high cost associated with high pump input powers.

No role of beta receptors in cognitive flexibility: Evidence from a task-switching paradigm in a randomized controlled trial.

PubMed

Steenbergen, L; Sellaro, R; de Rover, M; Hommel, B; Colzato, L S

2015-06-04

There is evidence that noradrenergic coeruleo-cortical projections are involved in different forms of cognitive flexibility. So far, no studies in humans have investigated the involvement of beta receptors on task-switching performance, a well-established measure of cognitive flexibility. The present study investigated whether the administration of propranolol (a central and peripheral beta-adrenergic antagonist) affected switching costs (i.e., the increase of reaction time in task-switching trials relative to task-repetition trials). Sixteen healthy adult human subjects performed a global-local task-switching paradigm in a double-blind, within-subjects design study investigating the effects of 80mg of propranolol hydrochloride (a β1 and β2 adrenergic receptor antagonist) vs. an oral dose of microcrystalline cellulose (placebo pill). The acute administration of propranolol did not affect the size of switching costs compared to the intake of the neutral placebo. Our results, corroborated by Bayesian inference, suggest that beta receptors do not modulate cognitive flexibility as measured by task-switching performance. Copyright © 2015 IBRO. Published by Elsevier Ltd. All rights reserved.

Novel switching method for single-phase NPC three-level inverter with neutral-point voltage control

NASA Astrophysics Data System (ADS)

Lee, June-Seok; Lee, Seung-Joo; Lee, Kyo-Beum

2018-02-01

This paper proposes a novel switching method with the neutral-point voltage control in a single-phase neutral-point-clamped three-level inverter (SP-NPCI) used in photovoltaic systems. A proposed novel switching method for the SP-NPCI improves the efficiency. The main concept is to fix the switching state of one leg. As a result, the switching loss decreases and the total efficiency is improved. In addition, it enables the maximum power-point-tracking operation to be performed by applying the proposed neutral-point voltage control algorithm. This control is implemented by modifying the reference signal. Simulation and experimental results provide verification of the performance of a novel switching method with the neutral-point voltage control.

Ultra High-Speed Radio Frequency Switch Based on Photonics.

PubMed

Ge, Jia; Fok, Mable P

2015-11-26

Microwave switches, or Radio Frequency (RF) switches have been intensively used in microwave systems for signal routing. Compared with the fast development of microwave and wireless systems, RF switches have been underdeveloped particularly in terms of switching speed and operating bandwidth. In this paper, we propose a photonics based RF switch that is capable of switching at tens of picoseconds speed, which is hundreds of times faster than any existing RF switch technologies. The high-speed switching property is achieved with the use of a rapidly tunable microwave photonic filter with tens of gigahertz frequency tuning speed, where the tuning mechanism is based on the ultra-fast electro-optics Pockels effect. The RF switch has a wide operation bandwidth of 12 GHz and can go up to 40 GHz, depending on the bandwidth of the modulator used in the scheme. The proposed RF switch can either work as an ON/OFF switch or a two-channel switch, tens of picoseconds switching speed is experimentally observed for both type of switches.

Excellent selector performance in engineered Ag/ZrO2:Ag/Pt structure for high-density bipolar RRAM applications

NASA Astrophysics Data System (ADS)

Wang, Chao; Song, Bing; Zeng, Zhongming

2017-12-01

A high-performance selector with bidirectional threshold switching (TS) characteristics of Ag/ZrO2/Pt structure was prepared by incorporating metallic Ag into the ZrO2 matrix. The bidirectional TS device exhibited excellent switching uniformity, forming-free behavior, ultra-low off current of <1 nA and adjustable selectivity (from 102 to 107). The experiment results confirmed that metallic Ag clusters were penetrated into the ZrO2 matrix during the annealing process, which would function as an effective active source responsible for the bidirectional TS. The volatile behavior could be explained by the self-dissolution of unstable filaments caused by minimization of the interfacial energy and thermal effect. Furthermore, a bipolar-type one selector-one resistor (1S-1R) memory device was successfully fabricated and exhibited significant suppression of the undesired sneak current, indicating the great potential as selector in a cross-point array.

SEPP-ZVS High Frequency Inverter Incorporating Auxiliary Switch

NASA Astrophysics Data System (ADS)

Ogiwara, Hiroyuki; Itoi, Misao; Nakaoka, Mutsuo

This paper presents a novel circuit topology to attain ZVS operation of a high frequency inverter over a wide range output power regulation using a PWM control technique by connecting an auxiliary switch to the conventional single ended push-pull (SEPP) ZVS high frequency inverter. A switching current is injected into the main switches via the auxiliary switch only during the short period between its turn-on and off times to supply a current required for its ZVS operation.

Improvement of multiprocessing performance by using optical centralized shared bus

NASA Astrophysics Data System (ADS)

Han, Xuliang; Chen, Ray T.

2004-06-01

With the ever-increasing need to solve larger and more complex problems, multiprocessing is attracting more and more research efforts. One of the challenges facing the multiprocessor designers is to fulfill in an effective manner the communications among the processes running in parallel on multiple multiprocessors. The conventional electrical backplane bus provides narrow bandwidth as restricted by the physical limitations of electrical interconnects. In the electrical domain, in order to operate at high frequency, the backplane topology has been changed from the simple shared bus to the complicated switched medium. However, the switched medium is an indirect network. It cannot support multicast/broadcast as effectively as the shared bus. Besides the additional latency of going through the intermediate switching nodes, signal routing introduces substantial delay and considerable system complexity. Alternatively, optics has been well known for its interconnect capability. Therefore, it has become imperative to investigate how to improve multiprocessing performance by utilizing optical interconnects. From the implementation standpoint, the existing optical technologies still cannot fulfill the intelligent functions that a switch fabric should provide as effectively as their electronic counterparts. Thus, an innovative optical technology that can provide sufficient bandwidth capacity, while at the same time, retaining the essential merits of the shared bus topology, is highly desirable for the multiprocessing performance improvement. In this paper, the optical centralized shared bus is proposed for use in the multiprocessing systems. This novel optical interconnect architecture not only utilizes the beneficial characteristics of optics, but also retains the desirable properties of the shared bus topology. Meanwhile, from the architecture standpoint, it fits well in the centralized shared-memory multiprocessing scheme. Therefore, a smooth migration with substantial multiprocessing performance improvement is expected. To prove the technical feasibility from the architecture standpoint, a conceptual emulation of the centralized shared-memory multiprocessing scheme is demonstrated on a generic PCI subsystem with an optical centralized shared bus.

A Josephson Junction based SPDT switch

NASA Astrophysics Data System (ADS)

Zhang, Helin; Earnest, Nathan; Lu, Yao; Ma, Ruichao; Chakram, Srivatsan; Schuster, David

RF microwave switches are useful tools in cryogenic experiments, allowing for multiple experiments to be connected to a single cryogenic measurement chain. However, these switches dissipate a substantial amount of heat, preventing fast switching. Josephson junction (JJ) are a promising avenue for realizing millikelvin microwave switching. We present a JJ based single-pole-double throw (SPDT) switch that has fast switching time, no heat dissipation, large on/off contrast, and works over a wide bandwidth. The switch can be used for real-time switching between experiments, routing single photons, or even generating entanglement. We will describe the design of the switch and present experimental characterization of its performance.

Molecular Rotors as Switches

PubMed Central

Xue, Mei; Wang, Kang L.

2012-01-01

The use of a functional molecular unit acting as a state variable provides an attractive alternative for the next generations of nanoscale electronics. It may help overcome the limits of conventional MOSFETd due to their potential scalability, low-cost, low variability, and highly integratable characteristics as well as the capability to exploit bottom-up self-assembly processes. This bottom-up construction and the operation of nanoscale machines/devices, in which the molecular motion can be controlled to perform functions, have been studied for their functionalities. Being triggered by external stimuli such as light, electricity or chemical reagents, these devices have shown various functions including those of diodes, rectifiers, memories, resonant tunnel junctions and single settable molecular switches that can be electronically configured for logic gates. Molecule-specific electronic switching has also been reported for several of these device structures, including nanopores containing oligo(phenylene ethynylene) monolayers, and planar junctions incorporating rotaxane and catenane monolayers for the construction and operation of complex molecular machines. A specific electrically driven surface mounted molecular rotor is described in detail in this review. The rotor is comprised of a monolayer of redox-active ligated copper compounds sandwiched between a gold electrode and a highly-doped P+ Si. This electrically driven sandwich-type monolayer molecular rotor device showed an on/off ratio of approximately 104, a read window of about 2.5 V, and a retention time of greater than 104 s. The rotation speed of this type of molecular rotor has been reported to be in the picosecond timescale, which provides a potential of high switching speed applications. Current-voltage spectroscopy (I-V) revealed a temperature-dependent negative differential resistance (NDR) associated with the device. The analysis of the device I–V characteristics suggests the source of the observed switching effects to be the result of the redox-induced ligand rotation around the copper metal center and this attribution of switching is consistent with the observed temperature dependence of the switching behavior as well as the proposed energy diagram of the device. The observed resistance switching shows the potential for future non-volatile memories and logic devices applications. This review will discuss the progress and provide a perspective of molecular motion for nanoelectronics and other applications.

Effect of sputtering atmosphere on the characteristics of ZrOx resistive switching memory

NASA Astrophysics Data System (ADS)

He, Pin; Ye, Cong; Wu, Jiaji; Wei, Wei; Wei, Xiaodi; Wang, Hao; Zhang, Rulin; Zhang, Li; Xia, Qing; Wang, Hanbin

2017-05-01

A ZrOx switching layer with different oxygen content for TiN/ZrOx/Pt resistive switching (RS) memory was prepared by magnetron sputtering in different atmospheres such as N2/Ar mixture, O2/Ar mixture as well as pure Ar. The morphology, structure and RS characteristics were systemically investigated and it was found that the RS performance is highly dependent on the sputtering atmosphere. For the memory device sputtered in N2/Ar mixture, with 8.06% nitrogen content in the ZrOx switching layer, the highest uniformity with smallest distribution of V set and high resistance states (HRS)/low resistance states (LRS) values were achieved. By analyzing the current conduction mechanisms combined with possible RS mechanisms for three devices, we deduce that for the device with a ZrOx layer sputtered in N2/Ar mixture, oxygen ions (O2-), which are decisive to the disruption/formation of the conductive filament, will gather around the tip of the filament due to the existence of doping nitrogen, and lead to the reduction of O2- migration randomness in the operation process, so that the uniformity of the N-doped ZrOx device can be improved.

High-frequency high-voltage high-power DC-to-DC converters

NASA Astrophysics Data System (ADS)

Wilson, T. G.; Owen, H. A., Jr.; Wilson, P. M.

1981-07-01

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

High-frequency high-voltage high-power DC-to-DC converters

NASA Technical Reports Server (NTRS)

Wilson, T. G.; Owen, H. A., Jr.; Wilson, P. M.

1981-01-01

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

Switching Schools: Reconsidering the Relationship Between School Mobility and High School Dropout

PubMed Central

Gasper, Joseph; DeLuca, Stefanie; Estacion, Angela

2014-01-01

Youth who switch schools are more likely to demonstrate a wide array of negative behavioral and educational outcomes, including dropping out of high school. However, whether switching schools actually puts youth at risk for dropout is uncertain, since youth who switch schools are similar to dropouts in their levels of prior school achievement and engagement, which suggests that switching schools may be part of the same long-term developmental process of disengagement that leads to dropping out. Using data from the National Longitudinal Survey of Youth 1997, this study uses propensity score matching to pair youth who switched high schools with similar youth who stayed in the same school. We find that while over half the association between switching schools and dropout is explained by observed characteristics prior to 9th grade, switching schools is still associated with dropout. Moreover, the relationship between switching schools and dropout varies depending on a youth's propensity for switching schools. PMID:25554706

TaOx-based resistive switching memories: prospective and challenges

PubMed Central

2013-01-01

Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the future. Although different switching materials have been reported; however, low-current operated devices (<100 μA) are necessary for productive RRAM applications. Therefore, TaOx is one of the prospective switching materials because of two stable phases of TaO2 and Ta2O5, which can also control the stable low- and high-resistance states. Long program/erase endurance and data retention at high temperature under low-current operation are also reported in published literature. So far, bilayered TaOx with inert electrodes (Pt and/or Ir) or single layer TaOx with semi-reactive electrodes (W and Ti/W or Ta/Pt) is proposed for real RRAM applications. It is found that the memory characteristics at current compliance (CC) of 80 μA is acceptable for real application; however, data are becoming worst at CC of 10 μA. Therefore, it is very challenging to reduce the operation current (few microampere) of the RRAM devices. This study investigates the switching mode, mechanism, and performance of low-current operated TaOx-based devices as compared to other RRAM devices. This topical review will not only help for application of TaOx-based nanoscale RRAM devices but also encourage researcher to overcome the challenges in the future production. PMID:24107610

A Computer for Low Context-Switch Time

DTIC Science & Technology

1990-03-01

Results To find out how an implementation performs, we use a set of programs that make up a simulation system. These programs compile C language programs ...have worse relative context-switch performance: the time needed to switch contexts has not de- creased as much as the time to run programs . Much of...this study is: How seriously is throughput performance im- paired by this approach to computer architecture? Reasonable estimates are possible only

TTEthernet for Integrated Spacecraft Networks

NASA Technical Reports Server (NTRS)

Loveless, Andrew

2015-01-01

Aerospace projects have traditionally employed federated avionics architectures, in which each computer system is designed to perform one specific function (e.g. navigation). There are obvious downsides to this approach, including excessive weight (from so much computing hardware), and inefficient processor utilization (since modern processors are capable of performing multiple tasks). There has therefore been a push for integrated modular avionics (IMA), in which common computing platforms can be leveraged for different purposes. This consolidation of multiple vehicle functions to shared computing platforms can significantly reduce spacecraft cost, weight, and design complexity. However, the application of IMA principles introduces significant challenges, as the data network must accommodate traffic of mixed criticality and performance levels - potentially all related to the same shared computer hardware. Because individual network technologies are rarely so competent, the development of truly integrated network architectures often proves unreasonable. Several different types of networks are utilized - each suited to support a specific vehicle function. Critical functions are typically driven by precise timing loops, requiring networks with strict guarantees regarding message latency (i.e. determinism) and fault-tolerance. Alternatively, non-critical systems generally employ data networks prioritizing flexibility and high performance over reliable operation. Switched Ethernet has seen widespread success filling this role in terrestrial applications. Its high speed, flexibility, and the availability of inexpensive commercial off-the-shelf (COTS) components make it desirable for inclusion in spacecraft platforms. Basic Ethernet configurations have been incorporated into several preexisting aerospace projects, including both the Space Shuttle and International Space Station (ISS). However, classical switched Ethernet cannot provide the high level of network determinism required by real-time spacecraft applications. Even with modern advancements, the uncoordinated (i.e. event-driven) nature of Ethernet communication unavoidably leads to message contention within network switches. The arbitration process used to resolve such conflicts introduces variation in the time it takes for messages to be forwarded. TTEthernet1 introduces decentralized clock synchronization to switched Ethernet, enabling message transmission according to a time-triggered (TT) paradigm. A network planning tool is used to allocate each device a finite amount of time in which it may transmit a frame. Each time slot is repeated sequentially to form a periodic communication schedule that is then loaded onto each TTEthernet device (e.g. switches and end systems). Each network participant references the synchronized time in order to dispatch messages at predetermined instances. This schedule guarantees that no contention exists between time-triggered Ethernet frames in the network switches, therefore eliminating the need for arbitration (and the timing variation it causes). Besides time-triggered messaging, TTEthernet networks may provide two additional traffic classes to support communication of different criticality levels. In the rate-constrained (RC) traffic class, the frame payload size and rate of transmission along each communication channel are limited to predetermined maximums. The network switches can therefore be configured to accommodate the known worst-case traffic pattern, and buffer overflows can be eliminated. The best-effort (BE) traffic class behaves akin to classical Ethernet. No guarantees are provided regarding transmission latency or successful message delivery. TTEthernet coordinates transmission of all three traffic classes over the same physical connections, therefore accommodating the full spectrum of traffic criticality levels required in IMA architectures. Common computing platforms (e.g. LRUs) can share networking resources in such a way that failures in non-critical systems (using BE or RC communication modes) cannot impact flight-critical functions (using TT communication). Furthermore, TTEthernet hardware (e.g. switches, cabling) can be shared by both TTEthernet and classical Ethernet traffic.

Movement of particles using sequentially activated dielectrophoretic particle trapping

DOEpatents

Miles, Robin R.

2004-02-03

Manipulation of DNA and cells/spores using dielectrophoretic (DEP) forces to perform sample preparation protocols for polymerized chain reaction (PCR) based assays for various applications. This is accomplished by movement of particles using sequentially activated dielectrophoretic particle trapping. DEP forces induce a dipole in particles, and these particles can be trapped in non-uniform fields. The particles can be trapped in the high field strength region of one set of electrodes. By switching off this field and switching on an adjacent electrodes, particles can be moved down a channel with little or no flow.

The effect of pain on task switching: pain reduces accuracy and increases reaction times across multiple switching paradigms.

PubMed

Attridge, Nina; Keogh, Edmund; Eccleston, Christopher

2016-10-01

Pain disrupts attention, which may have negative consequences for daily life for people with acute or chronic pain. It has been suggested that switching between tasks may leave us particularly susceptible to pain-related attentional disruption, because we need to disengage our attention from one task before shifting it onto another. Switching tasks typically elicit lower accuracies and/or longer reaction times when participants switch to a new task compared with repeating the same task, and pain may exacerbate this effect. We present 3 studies to test this hypothesis. In study 1, participants completed 2 versions of an alternating runs switching task under pain-free and thermal pain-induction conditions. Pain did not affect performance on either task. In studies 2 and 3, we examined 7 versions of the switching task using large general population samples, experiencing a variety of naturally occurring pain conditions, recruited and tested on the internet. On all tasks, participants with pain had longer reaction times on both switch and repeat trials compared with participants without pain, but pain did not increase switch costs. In studies 2 and 3, we also investigated the effects of type of pain, duration of pain, and analgesics on task performance. We conclude that pain has a small dampening effect on performance overall on switching tasks. This suggests that pain interrupts attention even when participants are engaged in a trial, not only when attention has been disengaged for shifting to a new task set.

Adjusting for treatment switching in randomised controlled trials - A simulation study and a simplified two-stage method.

PubMed

Latimer, Nicholas R; Abrams, K R; Lambert, P C; Crowther, M J; Wailoo, A J; Morden, J P; Akehurst, R L; Campbell, M J

2017-04-01

Estimates of the overall survival benefit of new cancer treatments are often confounded by treatment switching in randomised controlled trials (RCTs) - whereby patients randomised to the control group are permitted to switch onto the experimental treatment upon disease progression. In health technology assessment, estimates of the unconfounded overall survival benefit associated with the new treatment are needed. Several switching adjustment methods have been advocated in the literature, some of which have been used in health technology assessment. However, it is unclear which methods are likely to produce least bias in realistic RCT-based scenarios. We simulated RCTs in which switching, associated with patient prognosis, was permitted. Treatment effect size and time dependency, switching proportions and disease severity were varied across scenarios. We assessed the performance of alternative adjustment methods based upon bias, coverage and mean squared error, related to the estimation of true restricted mean survival in the absence of switching in the control group. We found that when the treatment effect was not time-dependent, rank preserving structural failure time models (RPSFTM) and iterative parameter estimation methods produced low levels of bias. However, in the presence of a time-dependent treatment effect, these methods produced higher levels of bias, similar to those produced by an inverse probability of censoring weights method. The inverse probability of censoring weights and structural nested models produced high levels of bias when switching proportions exceeded 85%. A simplified two-stage Weibull method produced low bias across all scenarios and provided the treatment switching mechanism is suitable, represents an appropriate adjustment method.

Nano-cone resistive memory for ultralow power operation.

PubMed

Kim, Sungjun; Jung, Sunghun; Kim, Min-Hwi; Kim, Tae-Hyeon; Bang, Suhyun; Cho, Seongjae; Park, Byung-Gook

2017-03-24

SiN x -based nano-structure resistive memory is fabricated by fully silicon CMOS compatible process integration including particularly designed anisotropic etching for the construction of a nano-cone silicon bottom electrode (BE). Bipolar resistive switching characteristics have significantly reduced switching current and voltage and are demonstrated in a nano-cone BE structure, as compared with those in a flat BE one. We have verified by systematic device simulations that the main cause of reduction in the performance parameters is the high electric field being more effectively concentrated at the tip of the cone-shaped BE. The greatly improved nonlinearity of the nano-cone resistive memory cell will be beneficial in the ultra-high-density crossbar array.

Remote switch actuator

DOEpatents

Haas, Edwin Gerard; Beauman, Ronald; Palo, Jr., Stefan

2013-01-29

The invention provides a device and method for actuating electrical switches remotely. The device is removably attached to the switch and is actuated through the transfer of a user's force. The user is able to remain physically removed from the switch site obviating need for protective equipment. The device and method allow rapid, safe actuation of high-voltage or high-current carrying electrical switches or circuit breakers.

Switch on the high thermal conductivity of graphene paper.

PubMed

Xie, Yangsu; Yuan, Pengyu; Wang, Tianyu; Hashemi, Nastaran; Wang, Xinwei

2016-10-14

This work reports on the discovery of a high thermal conductivity (κ) switch-on phenomenon in high purity graphene paper (GP) when its temperature is reduced from room temperature down to 10 K. The κ after switch-on (1732 to 3013 W m -1 K -1 ) is 4-8 times that before switch-on. The triggering temperature is 245-260 K. The switch-on behavior is attributed to the thermal expansion mismatch between pure graphene flakes and impurity-embedded flakes. This is confirmed by the switch behavior of the temperature coefficient of resistance. Before switch-on, the interactions between pure graphene flakes and surrounding impurity-embedded flakes efficiently suppress phonon transport in GP. After switch-on, the structure separation frees the pure graphene flakes from the impurity-embedded neighbors, leading to a several-fold κ increase. The measured κ before and after switch-on is consistent with the literature reported κ values of supported and suspended graphene. By conducting comparison studies with pyrolytic graphite, graphene oxide paper and partly reduced graphene paper, the whole physical picture is illustrated clearly. The thermal expansion induced switch-on is feasible only for high purity GP materials. This finding points out a novel way to switch on/off the thermal conductivity of graphene paper based on substrate-phonon scattering.

Multi-gap high impedance plasma opening switch

DOEpatents

Mason, Rodney J.

1996-01-01

A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources.

Avoiding Obstructions in Aiming a High-Gain Antenna

NASA Technical Reports Server (NTRS)

Edmonds, Karina

2006-01-01

The High Gain Antenna Pointing and Obstruction Avoidance software performs computations for pointing a Mars Rover high-gain antenna for communication with Earth while (1) avoiding line-of-sight obstructions (the Martian terrain and other parts of the Rover) that would block communication and (2) taking account of limits in ranges of motion of antenna gimbals and of kinematic singularities in gimbal mechanisms. The software uses simplified geometric models of obstructions and of the trajectory of the Earth in the Martian sky(see figure). It treats all obstructions according to a generalized approach, computing and continually updating the time remaining before interception of each obstruction. In cases in which the gimbal-mechanism design allows two aiming solutions, the algorithm chooses the solution that provides the longest obstruction-free Earth-tracking time. If the communication session continues until an obstruction is encountered in the current pointing solution and the other solution is now unobstructed, then the algorithm automatically switches to the other position. This software also notifies communication- managing software to cease transmission during the switch to the unobstructed position, resuming it when the switch is complete.

HIGH-PRECISION ASTROMETRIC MILLIMETER VERY LONG BASELINE INTERFEROMETRY USING A NEW METHOD FOR ATMOSPHERIC CALIBRATION

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rioja, M.; Dodson, R., E-mail: maria.rioja@icrar.org

2011-04-15

We describe a new method which achieves high-precision very long baseline interferometry (VLBI) astrometry in observations at millimeter (mm) wavelengths. It combines fast frequency-switching observations, to correct for the dominant non-dispersive tropospheric fluctuations, with slow source-switching observations, for the remaining ionospheric dispersive terms. We call this method source-frequency phase referencing. Provided that the switching cycles match the properties of the propagation media, one can recover the source astrometry. We present an analytic description of the two-step calibration strategy, along with an error analysis to characterize its performance. Also, we provide observational demonstrations of a successful application with observations using themore » Very Long Baseline Array at 86 GHz of the pairs of sources 3C274 and 3C273 and 1308+326 and 1308+328 under various conditions. We conclude that this method is widely applicable to mm-VLBI observations of many target sources, and unique in providing bona fide astrometrically registered images and high-precision relative astrometric measurements in mm-VLBI using existing and newly built instruments, including space VLBI.« less

Can You Multitask? Evidence and Limitations of Task Switching and Multitasking in Emergency Medicine.

PubMed

Skaugset, L Melissa; Farrell, Susan; Carney, Michele; Wolff, Margaret; Santen, Sally A; Perry, Marcia; Cico, Stephen John

2016-08-01

Emergency physicians work in a fast-paced environment that is characterized by frequent interruptions and the expectation that they will perform multiple tasks efficiently and without error while maintaining oversight of the entire emergency department. However, there is a lack of definition and understanding of the behaviors that constitute effective task switching and multitasking, as well as how to improve these skills. This article reviews the literature on task switching and multitasking in a variety of disciplines-including cognitive science, human factors engineering, business, and medicine-to define and describe the successful performance of task switching and multitasking in emergency medicine. Multitasking, defined as the performance of two tasks simultaneously, is not possible except when behaviors become completely automatic; instead, physicians rapidly switch between small tasks. This task switching causes disruption in the primary task and may contribute to error. A framework is described to enhance the understanding and practice of these behaviors. Copyright © 2015 American College of Emergency Physicians. Published by Elsevier Inc. All rights reserved.

Pulsed optical fibre lasers: Self-pulsation, Q-switching and tissue interactions

NASA Astrophysics Data System (ADS)

El-Sherif, Ashraf Fathy

The experimental and theoretical aspects of self-pulsing and dynamics effects of a CW Tm3+-doped silica fibre laser operating near 2 mum are investigated and examined for the first time. Various self-pulsing regimes are observed for a range of pumping rates when the fibre is end-pumped with a high power Nd:YAG laser operating at 1.319 mum in a linear bidirectional cavity. A theoretical model based on pair induced quenching (PIQ) is considered. The quenching effect acts as a saturable absorber or an additional dynamical loss mechanism, this additional absorber then may make the laser system unstable depending on whether the obtained steady-state solution is stable or not. A comparison between measured self-pulsation frequency and calculated relaxation oscillation frequency as a function of pumping rate is presented and discussed. High performance operation of a mechanical shutter Q-switched Tm3+-doped silica fibre laser operating near 2 mum is observed and presented. A single Q-switched pulse with peak power of 18.5 W and pulse duration at full width half maximum (FWHM) of 300 ns at higher mechanical chopper frequencies of nearly 20 kHz is achieved. The pulse-to-pulse stability was measured and improved to be more less than 5 %. The development, optimisation of the performance and analysis of an acousto-optic modulator (AOM) Q-switched Tm3+-doped silica fibre laser operating near 2 mum are presented. The shortest pulse duration obtained was 150 ns, giving a highest peak power of 4.1 kW, and is the highest yet reported from any type of active Q-switched fibre laser operating in low order mode. The maximum peak power was obtained for an optimum cavity length of 1.15 meters made up of fibre length, Q-switch crystal and passive space. The pulse train with high pulse-to-pulse stability of 1 % occurred at a range of high repetition rates from 10 to 30 kHz. High energy, high brightness of an electro-optic modulator (EOM) Q-switched Tm3+-doped silica fibre laser operating near 2 mum is presented. Appropriate design precautions have been undertaken to ensure that prelasing does not occur. In this system, the main Q-switched pulse may be followed by one pulse of lower amplitude "postlasing" when an optimised quarter wave voltage of 750 V is applied. It was found that the laser produced 320 ns pulses with 2.5 mJ pulse energy and 3.3 kW peak power at low repetition rates of 50-70 Hz. This is the first time that such studies of electro-optic modulator (EOM) Q-switched Tm3+ fibre lasers have been reported. The maximum peak power was obtained for an optimum cavity length of 2.15 meters, made up of fibre length, broadband beamsplitter polarizer, Q-switch crystal and passive space. Computer simulation of Tm3+doped silica and Er2-doped fluorozirconate fibre lasers using general laser analysis and design (GLAD) software has been successfully investigated for the first time. Input files, which are very similar to language are created to model three designs of fibre lasers, two for Tm3+-doped silica fibre lasers, core pumped at 1.57 mum and cladding pumped at 790 nm, and one for a 2.7 mum Er3+-doped fluorozirconate fibre laser cladding pumped at 975 nm. Results are presented from a relatively comprehensive computer model, which simulates CW operation of the fibre lasers. The simulation suggests that to enhance the conversion energy we have to optimise between the absorption coefficient of the fibre and the diffraction algorithms. Comparison of soft and hard tissue ablation with high peak power Q-switched and CW Tm3+-silica fibre lasers are presented. The ablation of chicken breast and lamb liver tissues as a soft tissue and cartilage as a hard tissue have been investigated using a free running CW-Tm3+-doped fibre laser (wavelength 1.99 mum, with self-pulsation duration ranging over 1 to few tens of microseconds) and for Q-switched operation of the same laser (pulse duration ranging from 150 ns to 900 ns and pulse repetition rates from 100 Hz to 17 kHz). Residual damage and affected zones using the CW laser were nearly 6 times greater than using the Q-switched fibre laser for about 50 s of exposure time, and increased with pulse repetition rate. The energy required to ablate tissues with the CW-fibre laser ranged from 153 to 334 kJ/cm3 and was significantly smaller from 0.2 to 0.6 kJ/cm3 for the Q-switched fibre laser. This study is the first direct comparison of tissue interaction of CW and Q- switched Tm3+-doped silica fibre lasers on crater depth, heat of ablation and collateral damage. The Q-switched Tm3+-doped silica fibre laser effectively ablates tissue with little secondary damage.

Afternoon nap and bright light exposure improve cognitive flexibility post lunch.

PubMed

Slama, Hichem; Deliens, Gaétane; Schmitz, Rémy; Peigneux, Philippe; Leproult, Rachel

2015-01-01

Beneficial effects of napping or bright light exposure on cognitive performance have been reported in participants exposed to sleep loss. Nonetheless, few studies investigated the effect of these potential countermeasures against the temporary drop in performance observed in mid-afternoon, and even less so on cognitive flexibility, a crucial component of executive functions. This study investigated the impact of either an afternoon nap or bright light exposure on post-prandial alterations in task switching performance in well-rested participants. Twenty-five healthy adults participated in two randomized experimental conditions, either wake versus nap (n=15), or bright light versus placebo (n=10). Participants were tested on a switching task three times (morning, post-lunch and late afternoon sessions). The interventions occurred prior to the post-lunch session. In the nap/wake condition, participants either stayed awake watching a 30-minute documentary or had the opportunity to take a nap for 30 minutes. In the bright light/placebo condition, participants watched a documentary under either bright blue light or dim orange light (placebo) for 30 minutes. The switch cost estimates cognitive flexibility and measures task-switching efficiency. Increased switch cost scores indicate higher difficulties to switch between tasks. In both control conditions (wake or placebo), accuracy switch-cost score increased post lunch. Both interventions (nap or bright light) elicited a decrease in accuracy switch-cost score post lunch, which was associated with diminished fatigue and decreased variability in vigilance. Additionally, there was a trend for a post-lunch benefit of bright light with a decreased latency switch-cost score. In the nap group, improvements in accuracy switch-cost score were associated with more NREM sleep stage N1. Thus, exposure to bright light during the post-lunch dip, a countermeasure easily applicable in daily life, results in similar beneficial effects as a short nap on performance in the cognitive flexibility domain with possible additional benefits on latency switch-cost scores.

Afternoon Nap and Bright Light Exposure Improve Cognitive Flexibility Post Lunch

PubMed Central

Schmitz, Rémy; Peigneux, Philippe; Leproult, Rachel

2015-01-01

Beneficial effects of napping or bright light exposure on cognitive performance have been reported in participants exposed to sleep loss. Nonetheless, few studies investigated the effect of these potential countermeasures against the temporary drop in performance observed in mid-afternoon, and even less so on cognitive flexibility, a crucial component of executive functions. This study investigated the impact of either an afternoon nap or bright light exposure on post-prandial alterations in task switching performance in well-rested participants. Twenty-five healthy adults participated in two randomized experimental conditions, either wake versus nap (n=15), or bright light versus placebo (n=10). Participants were tested on a switching task three times (morning, post-lunch and late afternoon sessions). The interventions occurred prior to the post-lunch session. In the nap/wake condition, participants either stayed awake watching a 30-minute documentary or had the opportunity to take a nap for 30 minutes. In the bright light/placebo condition, participants watched a documentary under either bright blue light or dim orange light (placebo) for 30 minutes. The switch cost estimates cognitive flexibility and measures task-switching efficiency. Increased switch cost scores indicate higher difficulties to switch between tasks. In both control conditions (wake or placebo), accuracy switch-cost score increased post lunch. Both interventions (nap or bright light) elicited a decrease in accuracy switch-cost score post lunch, which was associated with diminished fatigue and decreased variability in vigilance. Additionally, there was a trend for a post-lunch benefit of bright light with a decreased latency switch-cost score. In the nap group, improvements in accuracy switch-cost score were associated with more NREM sleep stage N1. Thus, exposure to bright light during the post-lunch dip, a countermeasure easily applicable in daily life, results in similar beneficial effects as a short nap on performance in the cognitive flexibility domain with possible additional benefits on latency switch-cost scores. PMID:26016658

Learning and mastery behaviours as risk factors to abandonment in a paediatric user of advanced single-switch access technology.

PubMed

Brian, Leung; Jessica A, Brian; Tom, Chau

2013-09-01

The present descriptive case study documents the behaviours of a child single-switch user in the community setting and draws attention to learning and mastery behaviours as risk factors to single-switch abandonment. Our observations were interpreted in the context of a longer term school-based evaluation of an advanced single-switch access technology with a nine year-old user with severe spastic quadriplegic cerebral palsy. The child completed 25 experiment sessions averaging a rate of three sessions every two weeks. During each session he worked on several blocks of single-switch computer activity using his vocal cord vibration switch. Despite high levels of single-switch sensitivity and specificity that suggested a good fit between the participant and the technology, the participant perceived a lower proficiency level of his own abilities, demonstrated impatience and intolerance to interaction errors, and was apprehensive of making mistakes when using his switch in public. The benefit of gaining some degree of independent physical access might not necessarily enhance resilience to interaction errors or bouts of poor task performance. On the other hand, the participant's behaviours were consistent with those of a typically developing child learning or mastering any new skill or task. Implications for Rehabilitation The attitude and behaviour of a paediatric switch user towards skill development can be risk factors to abandonment of an access technology, despite successful clinical trial with the device. Children with severe disabilities can be associated with the same types of skill development behaviour patterns and achievement motivation as their typically developing peers. Empirical observations of the case participant's switch use behaviours suggest that user training could be adaptive in order to account for individual differences in skill development and achievement motivation.

A novel micro/nano 1 × 4 mechanical optical switch

NASA Astrophysics Data System (ADS)

Lin, Wu-Lang; Fan, Kuang-Chao; Chiang, Li-Hung; Yang, Yao-Joe; Kuo, Wen-Cheng; Chung, Tien-Tung

2006-07-01

This paper presents the design, fabrication and testing of a novel 1 × 4 mechanical optical switch, whose components are fabricated by precision machining and MEMS technologies. The switch uses two relays as the two actuators whose switching direction is perpendicular to each other by an orthogonal arrangement. We adopt a direct fiber-to-fiber principle that aligns the input fiber directly to four output fibers. This configuration eliminates the use of traditional parts such as collimators, turning mirrors or prisms. In addition, due to the use of a fiber holder, the fiber position errors could be reduced to less than 0.27 µm using the two-stage geometry error reduction principle. We have successfully developed a simple and low-cost switch, which performs like most of the 1 × 4 mechanical optical switches that dominate the optics communications market. The advantages of our switch are a small size (20 × 20 × 25 mm3), low cost, high reliability, and the latching function does not need external force for maintaining the state. The experimental results showed that the insertion losses of the four channels are ch1: 0.68 dB, ch2: 1.49 dB, ch3: 0.71 dB and ch4: 0.97 dB. The switching time is 5 ms, the crosstalk <=80 dB. The reliability tests of the insertion loss after 10 000 cycles in four channels yield ch1: 1.67 dB, ch2: 1.63 dB, ch3: 0.75 dB and ch4: 0.98 dB. The size and the cost of our 1 × 4 mechanical optical switch are only about 1/5-1/10 and 1/10 of the series-connect-type and prism-type switches, respectively.

Electrical switching in cadmium boracite single crystals

NASA Technical Reports Server (NTRS)

Takahashi, T.; Yamada, O.

1981-01-01

Cadmium boracite single crystals at high temperatures ( 300 C) were found to exhibit a reversible electric field-induced transition between a highly insulative and a conductive state. The switching threshold is smaller than a few volts for an electrode spacing of a few tenth of a millimeter corresponding to an electric field of 100 to 1000 V/cm. This is much smaller than the dielectric break-down field for an insulator such as boracite. The insulative state reappears after voltage removal. A pulse technique revealed two different types of switching. Unstable switching occurs when the pulse voltage slightly exceeds the switching threshold and is characterized by a pre-switching delay and also a residual current after voltage pulse removal. A stable type of switching occurs when the voltage becomes sufficiently high. Possible device applications of this switching phenomenon are discussed.

Schizophrenia patients show task switching deficits consistent with N-methyl-d-aspartate system dysfunction but not global executive deficits: implications for pathophysiology of executive dysfunction in schizophrenia.

PubMed

Wylie, Glenn R; Clark, E A; Butler, P D; Javitt, D C

2010-05-01

Schizophrenia is associated with cognitive processing deficits, including deficits in executive processing, that represent a core component of the disorder. In the Task Switching Test, subjects view ambiguous stimuli and must alternate between competing rules to generate correct responses. Subjects show worse performance (prolonged response time and/or increased error rates) on the first response after a switch than on subsequent responses ("switch costs"), as well as performing worse when stimuli are incongruent as opposed to congruent ("congruence costs"). Finally, subjects show worse performance in the dual vs single task condition ("mixing costs"). In monkeys, the N-methyl-D-aspartate (NMDA) antagonist ketamine has been shown to increase congruence but not switch costs. Here, subjects viewed colored letters and had to respond alternately based upon letter (X vs O) or color (red vs blue). Switch, congruence and mixing costs were calculated. Patients with schizophrenia (n = 16) and controls (n = 17) showed similar switch costs, consistent with prior literature. Patients nevertheless showed increased congruence and mixing costs. In addition, relative to controls, patients showed worse performance across conditions in the letter vs color tasks, suggesting deficits in form vs color processing. Overall, while confirming executive dysfunction in schizophrenia, this study indicates that not all aspects of executive control are impaired and that the task switching paradigm may be useful for evaluating neurochemical vs neuroanatomic hypotheses of schizophrenia.

Method for improving fuel cell performance

DOEpatents

Uribe, Francisco A.; Zawodzinski, Thomas

2003-10-21

A method is provided for operating a fuel cell at high voltage for sustained periods of time. The cathode is switched to an output load effective to reduce the cell voltage at a pulse width effective to reverse performance degradation from OH adsorption onto cathode catalyst surfaces. The voltage is stepped to a value of less than about 0.6 V to obtain the improved and sustained performance.

Experience with PACS in an ATM/Ethernet switched network environment.

PubMed

Pelikan, E; Ganser, A; Kotter, E; Schrader, U; Timmermann, U

1998-03-01

Legacy local area network (LAN) technologies based on shared media concepts are not adequate for the growth of a large-scale picture archiving and communication system (PACS) in a client-server architecture. First, an asymmetric network load, due to the requests of a large number of PACS clients for only a few main servers, should be compensated by communication links to the servers with a higher bandwidth compared to the clients. Secondly, as the number of PACS nodes increases, the network throughout should not measurably cut production. These requirements can easily be fulfilled using switching technologies. Here asynchronous transfer mode (ATM) is clearly one of the hottest topics in networking because the ATM architecture provides integrated support for a variety of communication services, and it supports virtual networking. On the other hand, most of the imaging modalities are not yet ready for integration into a native ATM network. For a lot of nodes already joining an Ethernet, a cost-effective and pragmatic way to benefit from the switching concept would be a combined ATM/Ethernet switching environment. This incorporates an incremental migration strategy with the immediate benefits of high-speed, high-capacity ATM (for servers and high-sophisticated display workstations), while preserving elements of the existing network technologies. In addition, Ethernet switching instead of shared media Ethernet improves the performance considerably. The LAN emulation (LANE) specification by the ATM forum defines mechanisms that allow ATM networks to coexist with legacy systems using any data networking protocol. This paper points out the suitability of this network architecture in accordance with an appropriate system design.

RF MEMS devices for multifunctional integrated circuits and antennas

NASA Astrophysics Data System (ADS)

Peroulis, Dimitrios

Micromachining and RF Micro-Electro-Mechanical Systems (RF MEMS) have been identified as two of the most significant enabling technologies in developing miniaturized low-cost communications systems and sensor networks. The key components in these MEMS-based architectures are the RF MEMS switches and varactors. The first part of this thesis focuses on three novel RF MEMS components with state-of-the-art performance. In particular, a broadband 6 V capacitive MEMS switch is presented with insertion loss of only 0.04 and 0.17 dB at 10 and 40 GHz respectively. Special consideration is given to particularly challenging issues, such as residual stress, planarity, power handling capability and switching speed. The need for switches operating below 1 GHz is also identified and a spring-loaded metal-to-metal contact switch is developed. The measured on-state contact resistance and off-state series capacitance are 0.5 O and 10 fF respectively for this switch. An analog millimeter-wave variable capacitor is the third MEMS component presented in this thesis. This variable capacitor shows an ultra high measured tuning range of nearly 4:1, which is the highest reported value for the millimeter-wave region. The second part of this thesis primarily concentrates on MEMS-based reconfigurable systems and their potential to revolutionize the design of future RF/microwave multifunctional systems. High-isolation switches and switch packets with isolation of more than 60 dB are designed and implemented. Furthermore, lowpass and bandpass tunable filters with 3:1 and 2:1 tuning ratios respectively are demonstrated. Similar methods have been also applied to the field of slot antennas and a novel design technique for compact reconfigurable antennas has been developed. The main advantage of these antennas is that they essentially preserve their impedance, radiation pattern, polarization, gain and efficiency for all operating frequencies. The thesis concludes by discussing the future challenges of RF MEMS, such as packaging and reliability.

Experimental Results from a Laser-Triggered, Gas-Insulated, Spark-Gap Switch

NASA Astrophysics Data System (ADS)

Camacho, J. F.; Ruden, E. L.; Domonkos, M. T.

2017-10-01

We are performing experiments on a laser-triggered spark-gap switch with the goal of studying the transition from photoionization to current conduction. The discharge of current through the switch is triggered by a focused 532-nm wavelength beam from a Q-switched Nd:YAG laser with a pulse duration of about 10 ns. The trigger pulse is delivered along the longitudinal axis of the switch, and the focal spot can be placed anywhere along the axis of the 5-mm, gas-insulated gap between the switch electrodes. The switch test bed is designed to support a variety of working gases (e.g., Ar, N2) over a range of pressures. Electrical and optical diagnostics are used to measure switch performance as a function of parameters such as charge voltage, trigger pulse energy, insulating gas pressure, and gas species. A Mach-Zehnder imaging interferometer system operating at 532 nm is being used to obtain interferograms of the discharge plasma in the switch. We are also developing a 1064-nm interferometry diagnostic in an attempt to measure plasma free electron and neutral gas density profiles simultaneously within the switch gap. Results from our most recent experiments will be presented.

Examination of the temperature dependent electronic behavior of GeTe for switching applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Champlain, James G.; Ruppalt, Laura B.; Guyette, Andrew C.

2016-06-28

The DC and RF electronic behaviors of GeTe-based phase change material switches as a function of temperature, from 25 K to 375 K, have been examined. In its polycrystalline (ON) state, GeTe behaved as a degenerate p-type semiconductor, exhibiting metal-like temperature dependence in the DC regime. This was consistent with the polycrystalline (ON) state RF performance of the switch, which exhibited low resistance S-parameter characteristics. In its amorphous (OFF) state, the GeTe presented significantly greater DC resistance that varied considerably with bias and temperature. At low biases (<1 V) and temperatures (<200 K), the amorphous GeTe low-field resistance dramatically increased, resulting in exceptionally highmore » amorphous-polycrystalline (OFF-ON) resistance ratios, exceeding 10{sup 9} at cryogenic temperatures. At higher biases and temperatures, the amorphous GeTe exhibited nonlinear current-voltage characteristics that were best fit by a space-charge limited conduction model that incorporates the effect of a defect band. The observed conduction behavior suggests the presence of two regions of localized traps within the bandgap of the amorphous GeTe, located at approximately 0.26–0.27 eV and 0.56–0.57 eV from the valence band. Unlike the polycrystalline state, the high resistance DC behavior of amorphous GeTe does not translate to the RF switch performance; instead, a parasitic capacitance associated with the RF switch geometry dominates OFF state RF transmission.« less

49 CFR 236.775 - Movement, switch-and-lock.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 4 2012-10-01 2012-10-01 false Movement, switch-and-lock. 236.775 Section 236.775... Movement, switch-and-lock. A device, the complete operation of which performs the three functions of unlocking, operating and locking a switch, movable-point frog or derail. ...

49 CFR 236.775 - Movement, switch-and-lock.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 4 2013-10-01 2013-10-01 false Movement, switch-and-lock. 236.775 Section 236.775... Movement, switch-and-lock. A device, the complete operation of which performs the three functions of unlocking, operating and locking a switch, movable-point frog or derail. ...

49 CFR 236.775 - Movement, switch-and-lock.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 4 2014-10-01 2014-10-01 false Movement, switch-and-lock. 236.775 Section 236.775... Movement, switch-and-lock. A device, the complete operation of which performs the three functions of unlocking, operating and locking a switch, movable-point frog or derail. ...

49 CFR 236.775 - Movement, switch-and-lock.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 4 2011-10-01 2011-10-01 false Movement, switch-and-lock. 236.775 Section 236.775... Movement, switch-and-lock. A device, the complete operation of which performs the three functions of unlocking, operating and locking a switch, movable-point frog or derail. ...

Barriers to critical thinking: workflow interruptions and task switching among nurses.

PubMed

Cornell, Paul; Riordan, Monica; Townsend-Gervis, Mary; Mobley, Robin

2011-10-01

Nurses are increasingly called upon to engage in critical thinking. However, current workflow inhibits this goal with frequent task switching and unpredictable demands. To assess workflow's cognitive impact, nurses were observed at 2 hospitals with different patient loads and acuity levels. Workflow on a medical/surgical and pediatric oncology unit was observed, recording tasks, tools, collaborators, and locations. Nineteen nurses were observed for a total of 85.2 hours. Tasks were short with a mean duration of 62.4 and 81.6 seconds on the 2 units. More than 50% of the recorded tasks were less than 30 seconds in length. An analysis of task sequence revealed few patterns and little pairwise repetition. Performance on specific tasks differed between the 2 units, but the character of the workflow was highly similar. The nonrepetitive flow and high amount of switching indicate nurses experience a heavy cognitive load with little uninterrupted time. This implies that nurses rarely have the conditions necessary for critical thinking.

Improved performance of Ta2O5-x resistive switching memory by Gd-doping: Ultralow power operation, good data retention, and multilevel storage

NASA Astrophysics Data System (ADS)

Shi, K. X.; Xu, H. Y.; Wang, Z. Q.; Zhao, X. N.; Liu, W. Z.; Ma, J. G.; Liu, Y. C.

2017-11-01

Resistive-switching memory with ultralow-power consumption is very promising technology for next-generation data storage and high-energy-efficiency neurosynaptic chips. Herein, Ta2O5-x-based multilevel memories with ultralow-power consumption and good data retention were achieved by simple Gd-doping. The introduction of a Gd ion, as an oxygen trapper, not only suppresses the generation of oxygen vacancy defects and greatly increases the Ta2O5-x resistance but also increases the oxygen-ion migration barrier. As a result, the memory cells can operate at an ultralow current of 1 μA with the extrapolated retention time of >10 years at 85 °C and the high switching speeds of 10 ns/40 ns for SET/RESET processes. The energy consumption of the device is as low as 60 fJ/bit, which is comparable to emerging ultralow-energy consumption (<100 fJ/bit) memory devices.

Noise tolerance in wavelength-selective switching of optical differential quadrature-phase-shift-keying pulse train by collinear acousto-optic devices.

PubMed

Goto, Nobuo; Miyazaki, Yasumitsu

2014-06-01

Optical switching of high-bit-rate quadrature-phase-shift-keying (QPSK) pulse trains using collinear acousto-optic (AO) devices is theoretically discussed. Since the collinear AO devices have wavelength selectivity, the switched optical pulse trains suffer from distortion when the bandwidth of the pulse train is comparable to the pass bandwidth of the AO device. As the AO device, a sidelobe-suppressed device with a tapered surface-acoustic-wave (SAW) waveguide and a Butterworth-type filter device with a lossy SAW directional coupler are considered. Phase distortion of optical pulse trains at 40 to 100  Gsymbols/s in QPSK format is numerically analyzed. Bit-error-rate performance with additive Gaussian noise is also evaluated by the Monte Carlo method.

Effects of anxiety on task switching: evidence from the mixed antisaccade task.

PubMed

Ansari, Tahereh L; Derakshan, Nazanin; Richards, Anne

2008-09-01

According to the attentional control theory of anxiety (Eysenck, Derakshan, Santos, & Calvo, 2007), anxiety impairs performance on cognitive tasks that involve the shifting function of working memory. This hypothesis was tested using a mixed antisaccade paradigm, in which participants performed single-task and mixed-task versions of the paradigm. The single task involved the completion of separate blocks of anti- and prosaccade trials, whereas in the mixed task, participants completed anti- and prosaccade trials in a random order within blocks. Analysis of switch costs showed that high-anxious individuals did not exhibit the commonly reported paradoxical improvement in saccade latency, whereas low-anxious individuals did. The findings are discussed within the framework of attentional control theory.

Qualitative features of semantic fluency performance in mesial and lateral frontal patients.

PubMed

Reverberi, Carlo; Laiacona, Marcella; Capitani, Erminio

2006-01-01

Semantic verbal fluency is widely used in clinical and experimental studies. This task is highly sensitive to the presence of brain pathology and is frequently impaired after frontal lesions. Besides the total number of words generated, a qualitative analysis of their sequence can add valuable information about the impaired cognitive components. Thirty-four frontal patients and a group of matched controls were examined. Besides the number of words and subcategories retrieved by each group, we analysed two distinct aspects of the word sequence: the search strategy through a semantically organised store and the ability to switch from one subcategory to another. We checked whether the pattern of impairment changed according to the lesion site within the frontal lobe. Overall, patients produced fewer words than controls. However, only lateral frontal patients presented a reduced semantic relatedness between contiguously produced words and a specifically increased proportion of switches to different subcategories. The performance of lateral frontal patients was in line with the hypothesis of a search strategy impairment and cannot be attributed to a switching deficit. The performance of mesial frontal patients could be ascribed to a general deficit of activation.

Advanced Technical Data Study

DTIC Science & Technology

1975-01-29

will shut down automatically when condenser high pressure causes Pressure Limit Control high pressure switch to release. Press START switch (3...power cable (1) from facility pow- er. Troubleshoot cooling unit, for HI-LOW pressure switch repeated cutout. Refer to AGE ECU Cooling Unit...acti- vate when loss of air flow oc- curred, the pressure switch (3) failed to open circuit. Adjust or replace pressure switch . Refer to

Amorphous SiC as a structural layer in microbridge-based RF MEMS switches for use in software-defined radio

NASA Astrophysics Data System (ADS)

Parro, Rocco J.; Scardelletti, Maximilian C.; Varaljay, Nicholas C.; Zimmerman, Sloan; Zorman, Christian A.

2008-10-01

This paper reports an effort to develop amorphous silicon carbide (a-SiC) films for use in shunt capacitor RF MEMS microbridge-based switches. The films were deposited using methane and silane as the precursor gases. Switches were fabricated using 500 nm and 300 nm-thick a-SiC films to form the microbridges. Switches made from metallized 500 nm-thick SiC films exhibited favorable mechanical performance but poor RF performance. In contrast, switches made from metallized 300 nm-thick SiC films exhibited excellent RF performance but poor mechanical performance. Load-deflection testing of unmetallized and metallized bulk micromachined SiC membranes indicates that the metal layers have a small effect on the Young's modulus of the 500 nm and 300 nm-thick SiC MEMS. As for residual stress, the metal layers have a modest effect on the 500 nm-thick structures, but a significant affect on the residual stress in the 300 nm-thick structures.

Musical training, bilingualism, and executive function: a closer look at task switching and dual-task performance.

PubMed

Moradzadeh, Linda; Blumenthal, Galit; Wiseheart, Melody

2015-07-01

This study investigated whether musical training and bilingualism are associated with enhancements in specific components of executive function, namely, task switching and dual-task performance. Participants (n = 153) belonging to one of four groups (monolingual musician, bilingual musician, bilingual non-musician, or monolingual non-musician) were matched on age and socioeconomic status and administered task switching and dual-task paradigms. Results demonstrated reduced global and local switch costs in musicians compared with non-musicians, suggesting that musical training can contribute to increased efficiency in the ability to shift flexibly between mental sets. On dual-task performance, musicians also outperformed non-musicians. There was neither a cognitive advantage for bilinguals relative to monolinguals, nor an interaction between music and language to suggest additive effects of both types of experience. These findings demonstrate that long-term musical training is associated with improvements in task switching and dual-task performance. Copyright © 2014 Cognitive Science Society, Inc.

Dynamics of phenotypic switching of bacterial cells with temporal fluctuations in pressure

NASA Astrophysics Data System (ADS)

Nepal, Sudip; Kumar, Pradeep

2018-05-01

Phenotypic switching is one of the mechanisms by which bacteria thrive in ever changing environmental conditions around them. Earlier studies have shown that the application of steady high hydrostatic pressure leads to stochastic switching of mesophilic bacteria from a cellular phenotype having a normal cell cycle to another phenotype lacking cell division. Here, we have studied the dynamics of this phenotypic switching with fluctuating periodic pressure using a set of experiments and a theoretical model. Our results suggest that the phenotypic switching rate from high-pressure phenotype to low-pressure phenotype in the reversible regime is larger as compared to the switching rate from low-pressure phenotype to high-pressure phenotype. Furthermore, we find that even though the cell division and elongation are presumably regulated by a large number of genes the underlying physics of the dynamics of stochastic switching at high pressure is captured reasonably well by a simple two-state model.

High optical switching speed and flexible electrochromic display based on WO3 nanoparticles with ZnO nanorod arrays' supported electrode

NASA Astrophysics Data System (ADS)

Wang, Mingjun; Fang, Guojia; Yuan, Longyan; Huang, Huihui; Sun, Zhenhua; Liu, Nishuang; Xia, Shanhong; Zhao, Xingzhong

2009-05-01

The electrochromic (EC) property of WO3 nanoparticles grown on vertically self-aligned ZnO nanorods (ZNRs) is reported. An electrochromic character display based on WO3 nanoparticle-modified ZnO nanorod arrays on a flexible substrate has been fabricated and demonstrated. The ZNRs were first synthesized on ZnO-seed-coated In2O3:Sn (ITO) glass (1 cm2 cell) and polyethylene terephthalate (PET) (4 cm2 cell) substrates by a low temperature hydrothermal method, and then amorphous WO3 nanoparticles were grown directly on the surface of the ZNRs by the pulsed laser deposition (PLD) method. The ZNR-based EC device shows high transparence, good electrochromic stability and fast switching speed (4.2 and 4 s for coloration and bleaching, respectively, for a 1 cm2 cell). The good performance of the ZNR electrode-based EC display can be attributed to the large surface area, high crystallinity and good electron transport properties of the ZNR arrays. Its high contrast, fast switching, good memory and flexible characteristics indicate it is a promising candidate for flexible electrochromic displays or electronic paper.

High power-efficient asynchronous SAR ADC for IoT devices

NASA Astrophysics Data System (ADS)

Zhang, Beichen; Yao, Bingbing; Liu, Liyuan; Liu, Jian; Wu, Nanjian

2017-10-01

This paper presents a power-efficient 100-MS/s, 10-bit asynchronous successive approximation register (SAR) ADC. It includes an on-chip reference buffer and the total power dissipation is 6.8 mW. To achieve high performance with high power-efficiency in the proposed ADC, bootstrapped switch, redundancy, set-and-down switching approach, dynamic comparator and dynamic logic techniques are employed. The prototype was fabricated using 65 nm standard CMOS technology. At a 1.2-V supply and 100 MS/s, the ADC achieves an SNDR of 56.2 dB and a SFDR of 65.1 dB. The ADC core consumes only 3.1 mW, resulting in a figure of merit (FOM) of 30.27 fJ/conversionstep and occupies an active area of only 0.009 mm2.

The ringer - An efficient, high repetition rate circuit for electromagnetic launchers

NASA Astrophysics Data System (ADS)

Giorgi, D.; Helava, H.; Lindner, K.; Long, J.; Zucker, O.

1989-01-01

The Meatgrinder is an efficient, current-multiplying circuit which can be used to optimize the energy transfer to various electromagnetic gun configurations. The authors present a simple variant of the Meatgrinder circuit which permits a first-order current profiling into the gun and recovery of the inductive energy in the barrel at a high repetition rate. The circuit is basically a one-stage Meatgrinder which utilizes the ringing of the energy storage capacitor (less than 40 percent reversal) to perform the opening switch function and a solid-state diode as the crowbar switch between the two mutually coupled inductors. With resonant charging, this results in a completely passive, high-repetiton-rate electromagnetic-gun power supply. Since most of the barrel energy is recovered, a railgun with negligible muzzle flash can be realized.

Contralateral disconnection of the rat prelimbic cortex and dorsomedial striatum impairs cue-guided behavioral switching

PubMed Central

Baker, Phillip M.

2014-01-01

Switches in reward outcomes or reward-predictive cues are two fundamental ways in which information is used to flexibly shift response patterns. The rat prelimbic cortex and dorsomedial striatum support behavioral flexibility based on a change in outcomes. The present experiments investigated whether these two brain regions are necessary for conditional discrimination performance in which a switch in reward-predictive cues occurs every three to six trials. The GABA agonists baclofen and muscimol infused into the prelimbic cortex significantly impaired performance leading rats to adopt an inappropriate turn strategy. The NMDA receptor antagonist D-AP5 infused into the dorsomedial striatum or prelimbic cortex and dorsomedial striatum contralateral disconnection impaired performance due to a rat failing to switch a response choice for an entire trial block in about two out of 13 test blocks. In an additional study, contralateral disconnection did not affect nonswitch discrimination performance. The results suggest that the prelimbic cortex and dorsomedial striatum are necessary to support cue-guided behavioral switching. The prelimbic cortex may be critical for generating alternative response patterns while the dorsomedial striatum supports the selection of an appropriate response when cue information must be used to flexibly switch response patterns. PMID:25028395

Reliable WDM multicast in optical burst-switched networks

NASA Astrophysics Data System (ADS)

Jeong, Myoungki; Qiao, Chunming; Xiong, Yijun

2000-09-01

IN this paper,l we present a reliable WDM (Wavelength-Division Multiplexing) multicast protocol in optical burst-switched (OBS) networks. Since the burst dropping (loss) probability may be potentially high in a heavily loaded OBS backbone network, reliable multicast protocols that have developed for IP networks at the transport (or application) layer may incur heavy overheads such as a large number of duplicate retransmissions. In addition, it may take a longer time for an end host to detect and then recover from burst dropping (loss) occurred at the WDM layer. For efficiency reasons, we propose burst loss recovery within the OBS backbone (i.e., at the WDM link layer). The proposed protocol requires two additional functions to be performed by the WDM switch controller: subcasting and maintaining burst states, when the WDM switch has more than one downstream on the WDM multicast tree. We show that these additional functions are simple to implement and the overhead associated with them is manageable.

Unipolar resistive switching behaviors and mechanisms in an annealed Ni/ZrO2/TaN memory device

NASA Astrophysics Data System (ADS)

Tsai, Tsung-Ling; Ho, Tsung-Han; Tseng, Tseung-Yuen

2015-01-01

The effects of Ni/ZrO2/TaN resistive switching memory devices without and with a 400 °C annealing process on switching properties are investigated. The devices exhibit unipolar resistive switching behaviors with low set and reset voltages because of a large amount of Ni diffusion with no reaction with ZrO2 after the annealing process, which is confirmed by ToF-SIMS and XPS analyses. A physical model based on a Ni filament is constructed to explain such phenomena. The device that undergoes the 400 °C annealing process exhibits an excellent endurance of more than 1.5  ×  104 cycles. The improvement can be attributed to the enhancement of oxygen ion migration along grain boundaries, which result in less oxygen ion consumption during the reset process. The device also performs good retention up to 105 s at 150 °C. Therefore, it has great potential for high-density nonvolatile memory applications.

Electrochromic conductive polymer fuses for hybrid organic/inorganic semiconductor memories

NASA Astrophysics Data System (ADS)

Möller, Sven; Forrest, Stephen R.; Perlov, Craig; Jackson, Warren; Taussig, Carl

2003-12-01

We demonstrate a nonvolatile, write-once-read-many-times (WORM) memory device employing a hybrid organic/inorganic semiconductor architecture consisting of thin film p-i-n silicon diode on a stainless steel substrate integrated in series with a conductive polymer fuse. The nonlinearity of the silicon diodes enables a passive matrix memory architecture, while the conductive polyethylenedioxythiophene:polystyrene sulfonic acid polymer serves as a reliable switch with fuse-like behavior for data storage. The polymer can be switched at ˜2 μs, resulting in a permanent decrease of conductivity of the memory pixel by up to a factor of 103. The switching mechanism is primarily due to a current and thermally dependent redox reaction in the polymer, limited by the double injection of both holes and electrons. The switched device performance does not degrade after many thousand read cycles in ambient at room temperature. Our results suggest that low cost, organic/inorganic WORM memories are feasible for light weight, high density, robust, and fast archival storage applications.

Low-Power Consumption InGaAs PIN Diode Switches for V-band Applications

NASA Astrophysics Data System (ADS)

Ziegler, Volker; Berg, Michael; Tobler, Hans; Woelk, Claus; Deufel, Reinhard; Trasser, Andreas; Schumacher, Hermann; Alekseev, Egor; Pavlidis, Dimitris; Dickmann, Juergen

1999-02-01

In this paper, we present the measurement results of two InP-based coplanar SPST (single pole single throw) PIN diode switches operating at V-band frequencies. The switches show excellent mm-wave performance combined with a very low DC-power consumption. The SPST with on-chip biasing and DC-blocking capacitors demonstrates an insertion loss as low as 0.84 dB and a high isolation value of 21.8 dB at a center frequency of 53 GHz with only 0.8 mW of DC-power consumption. A more simple SPST exhibits under equivalent conditions (0.9 mW) an excellent insertion loss of 0.52 dB and an isolation of 21.7 dB. Furthermore the power-handling capability of the InGaAs PIN diodes, which are used as active switching elements, is investigated in this paper and found to exceed 25 dBm at a reverse voltage of -5 V.

Magnetization switching schemes for nanoscale three-terminal spintronics devices

NASA Astrophysics Data System (ADS)

Fukami, Shunsuke; Ohno, Hideo

2017-08-01

Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising approach to realize ultralow-power and high-performance electronics. While two-terminal devices with spin-transfer torque switching have been extensively developed nowadays, there has been a growing interest in devices with a three-terminal structure. Of primary importance for applications is the efficient manipulation of magnetization, corresponding to information writing, in nanoscale devices. Here we review the studies of current-induced domain wall motion and spin-orbit torque-induced switching, which can be applied to the write operation of nanoscale three-terminal spintronics devices. For domain wall motion, the size dependence of device properties down to less than 20 nm will be shown and the underlying mechanism behind the results will be discussed. For spin-orbit torque-induced switching, factors governing the threshold current density and strategies to reduce it will be discussed. A proof-of-concept demonstration of artificial intelligence using an analog spin-orbit torque device will also be reviewed.

Active Radiative Thermal Switching with Graphene Plasmon Resonators.

PubMed

Ilic, Ognjen; Thomas, Nathan H; Christensen, Thomas; Sherrott, Michelle C; Soljačić, Marin; Minnich, Austin J; Miller, Owen D; Atwater, Harry A

2018-03-27

We theoretically demonstrate a near-field radiative thermal switch based on thermally excited surface plasmons in graphene resonators. The high tunability of graphene enables substantial modulation of near-field radiative heat transfer, which, when combined with the use of resonant structures, overcomes the intrinsically broadband nature of thermal radiation. In canonical geometries, we use nonlinear optimization to show that stacked graphene sheets offer improved heat conductance contrast between "ON" and "OFF" switching states and that a >10× higher modulation is achieved between isolated graphene resonators than for parallel graphene sheets. In all cases, we find that carrier mobility is a crucial parameter for the performance of a radiative thermal switch. Furthermore, we derive shape-agnostic analytical approximations for the resonant heat transfer that provide general scaling laws and allow for direct comparison between different resonator geometries dominated by a single mode. The presented scheme is relevant for active thermal management and energy harvesting as well as probing excited-state dynamics at the nanoscale.

Fuel switching in the electricity sector under the EU ETS: Review and prospective

DOE Office of Scientific and Technical Information (OSTI.GOV)

Delarue, E.; Voorspools, K.; D'haeseleer, W.

2008-06-15

The European Union has implemented the European Union emission trading scheme (EU ETS) as an instrument to facilitate greenhouse gas (GHG) emission abatement stipulated in the Kyoto protocol. Empirical data show that in the early stages of the EU ETS, the value of a ton of CO{sub 2} has already led to emission abatement through switching from coal to gas in the European electric power sector. In the second part of this paper, an electricity generation simulation model is used to perform simulations on the switching behavior in both the first and the second trading periods of the EU ETS.more » In 2005, the reduction in GHG emissions in the electric power sector due to EU ETS is estimated close to 88 Mton. For the second trading period, a European Union allowance (EUA) price dependent GHG reduction curve has been determined. The obtained switching potential turns out to be significant, up to 300 Mton/year, at sufficiently high EUA prices.« less

Optimum Design of LLC Resonant Converter using Inductance Ratio (Lm/Lr)

NASA Astrophysics Data System (ADS)

Palle, Kowstubha; Krishnaveni, K.; Ramesh Reddy, Kolli

2017-06-01

The main benefits of LLC resonant dc/dc converter over conventional series and parallel resonant converters are its light load regulation, less circulating currents, larger bandwidth for zero voltage switching, and less tuning of switching frequency for controlled output. An unique analytical tool, called fundamental harmonic approximation with peak gain adjustment is used for designing the converter. In this paper, an optimum design of the converter is proposed by considering three different design criterions with different values of inductance ratio (Lm/Lr) to achieve good efficiency at high input voltage. The optimum design includes the analysis in operating range, switching frequency range, primary side losses of a switch and stability. The analysis is carried out with simulation using the software tools like MATLAB and PSIM. The performance of the optimized design is demonstrated for a design specification of 12 V, 5 A output operating with an input voltage range of 300-400 V using FSFR 2100 IC of Texas instruments.

Hybrid power source

DOEpatents

Singh, Harmohan N.

2012-06-05

A hybrid power system is comprised of a high energy density element such as a fuel-cell and high power density elements such as a supercapacitor banks. A DC/DC converter electrically connected to the fuel cell and converting the energy level of the energy supplied by the fuel cell. A first switch is electrically connected to the DC/DC converter. First and second supercapacitors are electrically connected to the first switch and a second switch. A controller is connected to the first switch and the second switch, monitoring charge levels of the supercapacitors and controls the switching in response to the charge levels. A load is electrically connected to the second switch. The first switch connects the DC/DC converter to the first supercapacitor when the second switch connects the second supercapacitor to the load. The first switch connects the DC/DC converter to the second supercapacitor when the second switch connects the first supercapacitor to the load.

CFAVC scheme for high frequency series resonant inverter-fed domestic induction heating system

NASA Astrophysics Data System (ADS)

Nagarajan, Booma; Reddy Sathi, Rama

2016-01-01

This article presents the investigations on the constant frequency asymmetric voltage cancellation control in the AC-AC resonant converter-fed domestic induction heating system. Conventional fixed frequency control techniques used in the high frequency converters lead to non-zero voltage switching operation and reduced output power. The proposed control technique produces higher output power than the conventional fixed-frequency control strategies. In this control technique, zero-voltage-switching operation is maintained during different duty cycle operation for reduction in the switching losses. Complete analysis of the induction heating power supply system with asymmetric voltage cancellation control is discussed in this article. Simulation and experimental study on constant frequency asymmetric voltage cancellation (CFAVC)-controlled full bridge series resonant inverter is performed. Time domain simulation results for the open and closed loop of the system are obtained using MATLAB simulation tool. The simulation results prove the control of voltage and power in a wide range. PID controller-based closed loop control system achieves the voltage regulation of the proposed system for the step change in load. Hardware implementation of the system under CFAVC control is done using the embedded controller. The simulation and experimental results validate the performance of the CFAVC control technique for series resonant-based induction cooking system.

A Bilingual Advantage in Task Switching

ERIC Educational Resources Information Center

Prior, Anat; MacWhinney, Brian

2010-01-01

This study investigated the possibility that lifelong bilingualism may lead to enhanced efficiency in the ability to shift between mental sets. We compared the performance of monolingual and fluent bilingual college students in a task-switching paradigm. Bilinguals incurred reduced switching costs in the task-switching paradigm when compared with…

Switching between Tasks and Responses: A Developmental Study

ERIC Educational Resources Information Center

Crone, Eveline A.; Bunge, Silvia A.; van der Molen, Maurits W.; Ridderinkhof, K. Richard

2006-01-01

Task switching requires the ability to flexibly switch between task rules and responses, and is sensitive to developmental change. We tested the hypothesis that developmental changes in task switch performance are associated with changes in the facilitating or interfering effect of the previously retrieved stimulus-response (S-R) association.…

Characterizing switching and congruency effects in the Implicit Association Test as reactive and proactive cognitive control.

PubMed

Hilgard, Joseph; Bartholow, Bruce D; Dickter, Cheryl L; Blanton, Hart

2015-03-01

Recent research has identified an important role for task switching, a cognitive control process often associated with executive functioning, in the Implicit Association Test (IAT). However, switching does not fully account for IAT effects, particularly when performance is scored using more recent d-score formulations. The current study sought to characterize multiple control processes involved in IAT performance through the use of event-related brain potentials (ERPs). Participants performed a race-evaluative IAT while ERPs were recorded. Behaviorally, participants experienced superadditive reaction time costs of incongruency and task switching, consistent with previous studies. The ERP showed a marked medial frontal negativity (MFN) 250-450 ms post-stimulus at midline fronto-central locations that were more negative for incongruent than congruent trials but more positive for switch than for no-switch trials, suggesting separable control processes are engaged by these two factors. Greater behavioral IAT bias was associated with both greater switch-related and congruency-related ERP activity. Findings are discussed in terms of the Dual Mechanisms of Control model of reactive and proactive cognitive control. © The Author (2014). Published by Oxford University Press. For Permissions, please email: journals.permissions@oup.com.

Development of longitudinally excited CO2 laser

NASA Astrophysics Data System (ADS)

Masroon, N. S.; Tanaka, M.; Tei, M.; Uno, K.; Tsuyama, M.; Nakano, H.

2018-05-01

Simple, compact, and affordable discharged-pumped CO2 laser controlled by a fast high voltage solid state switch has been developed. In this study, longitudinal excitation scheme has been adapted for simple configuration. In the longitudinal excitation scheme, the discharge is produced along the direction of the laser axis, and the electrodes are well separated with a small discharge cross-section. Triggered spark gap switch is usually used to switch out the high voltage because of simple and low cost. However, the triggered spark gap operates in the arc mode and suffer from recovery problem causing a short life time and low efficiency for high repetition rate operation. As a result, there is now considerable interest in replacing triggered spark gap switch with solid state switches. Solid state switches have significant advantages compared to triggered spark gap switch which include longer service lifetime, low cost and stable high trigger pulse. We have developed simple and low cost fast high voltage solid state switch that consists of series connected-MOSFETs. It has been installed to the longitudinally excited CO2 laser to realize the gap switch less operation. Characteristics of laser oscillation by varying the discharge length, charging voltage, capacitance and gas pressure have been evaluated. Longer discharge length produce high power of laser oscillation. Optimum charging voltage and gas pressure were existed for longitudinally excited CO2 laser.

Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO2- x thin films deposited at room temperature

NASA Astrophysics Data System (ADS)

Ismail, Muhammad; Ullah, Rehmat; Hussain, Riaz; Talib, Ijaz; Rana, Anwar Manzoor; Hussain, Muhammad; Mahmood, Khalid; Hussain, Fayyaz; Ahmed, Ejaz; Bao, Dinghua

2018-02-01

Cerium oxide (CeO2-x) film was deposited on Pt/Ti/SiO2/Si substrate by rf magnetron sputtering at room temperature. Resistive switching characteristics of these ceria films have been improved by increasing oxygen content during deposition process. Endurance and statistical analyses indicate that the operating stability of CeO2-x-based memory is highly dependent on the oxygen content. Results indicate that CeO2-x film-based RRAM devices exhibit optimum performance when fabricated at an argon/oxygen ratio of 6:24. An increase in the oxygen content introduced during CeO2-x film deposition not only stabilizes the conventional bipolar RS but also improves excellent switching uniformity such as large ON/OFF ratio (102), excellent switching device-to-device uniformity and good sweep endurance over 500 repeated RS cycles. Conduction in the low-resistance state (LRS) as well as in the low bias field region in the high-resistance state (HRS) is found to be Ohmic and thus supports the conductive filament (CF) theory. In the high voltage region of HRS, space charge limited conduction (SCLC) and Schottky emission are found to be the dominant conduction mechanisms. A feasible filamentary RS mechanism based on the movement of oxygen ions/vacancies under the bias voltage has been discussed.

Low-temperature DC-contact piezoelectric switch operable in high magnetic fields

NASA Astrophysics Data System (ADS)

Kaltenbacher, Thomas; Caspers, Fritz; Doser, Michael; Kellerbauer, Alban; Pribyl, Wolfgang

2013-11-01

A piezoelectric single-pole single-throw (SPST) switch has been developed, since there is no satisfying commercial low-resistance, high current DC-contact RF switch available which is operable at 4.2 K and in a high magnetic field of at least 0.5 T. This piezoelectric switch shows very low insertion loss of less than -0.1 dB within a bandwidth of 100 MHz when operated at 4.2 K. The switch could also be used to mechanically disconnect and connect electrodes or electrical circuits from one another.

Multi-gap high impedance plasma opening switch

DOEpatents

Mason, R.J.

1996-10-22

A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode is disclosed. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources. 12 figs.

A High Pressure Flowing Oil Switch For Gigawatt, Repetitive Applications

DTIC Science & Technology

2005-06-01

for testing the high pressure switch concept under repetitive pulse conditions is a 4.8 Ω, 70 ns water pulse forming line (PFL). The water PFL is...Cox Instruments. A pair of Hedland variable area flow sensors monitored relative flow rates in the two oil lines that fed the high pressure switch . High... pressure switch was tested under both single shot and repetitive conditions over a range of pressures, flow rates and temperatures. The primary

Design methodology and performance analysis of a wideband 90° phase switch for radiometer applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Villa, Enrique, E-mail: villae@unican.es; Aja, Beatriz; Cagigas, Jaime

2013-12-15

This paper presents the analysis, design, and characterization of a wideband 90° phase switch in Ka-band. The phase switch is based on two microstrip bandpass filters in which the commutation is performed by a novel single-pole double-throw (SPDT) switch. The analysis of π-network bandpass filters is provided, obtaining the phase difference and amplitude imbalance between filters and their scattering parameters; tested results show an average phase difference of 88.9° ± 5° and an amplitude imbalance of 0.15 dB from 24 to 37 GHz. The new broadband SPDT switch is based on a coplanar waveguide-to-slotline-to-microstrip structure, which enables a full planarmore » integration with shifting branches. PIN diodes are used to perform the switching between outputs. The SPDT shows isolation better than 19 dB, insertion loss of around 1.8 dB, and return loss better than 15 dB. The full integration of the phase switch achieves a return loss better than 11 dB and insertion loss of around 4 dB over the band 26–36 GHz, with an average phase difference of 87.1° ± 4° and an average amplitude imbalance of 0.3 dB. It provides an excellent performance for this frequency range, suitable for radio-astronomy receivers.« less

Research of an electromagnetically actuated spark gap switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Tianyang; Chen, Dongqun, E-mail: csycdq@163.com; Liu, Jinliang

2013-11-15

As an important part of pulsed power systems, high-voltage and high-current triggered spark gap switch and its trigger system are expected to achieve a compact structure. In this paper, a high-voltage, high-current, and compact electromagnetically actuated spark gap switch is put forward, and it can be applied as a part of an intense electron-beam accelerator (IEBA). A 24 V DC power supply is used to trigger the switch. The characteristics of the switch were measured for N{sub 2} when the gas pressure is 0.10–0.30 MPa. The experimental results showed that the voltage/pressure (V/p) curve of the switch was linear relationship.more » The operating ranges of the switch were 21%–96%, 21%–95%, 21%–95%, 19%–95%, 17%–95%, and 16%–96% of the switch's self-breakdown voltage when the gas pressures were 0.10, 0.14, 0.18, 0.22, 0.26, and 0.30 MPa, respectively. The switch and its trigger system worked steadily and reliably with a peak voltage of 30 kV, a peak current of 60 kA in the IEBA when the pressure of N{sub 2} in the switch was 0.30 MPa.« less

Gigabit Wireless for Network Connectivity

ERIC Educational Resources Information Center

Schoedel, Eric

2009-01-01

Uninterrupted, high-bandwidth network connectivity is crucial for higher education. Colleges and universities increasingly adopt gigabit wireless solutions because of their fiber-equivalent performance, quick implementation, and significant return on investment. For just those reasons, Rush University Medical Center switched from free space optics…

Titanium oxide nonvolatile memory device and its application

NASA Astrophysics Data System (ADS)

Wang, Wei

In recent years, the semiconductor memory industry has seen an ever-increasing demand for nonvolatile memory (NVM), which is fueled by portable consumer electronic applications like the mobile phone and MP3 player. FLASH memory has been the most widely used nonvolatile memories in these systems, and has successfully kept up with CMOS scaling for many generations. However, as FLASH memory faces major scaling challenges beyond 22nm, non-charge-based nonvolatile memories are widely researched as candidates to replace FLASH. Titanium oxide (TiOx) nonvolatile memory device is considered to be a promising choice due to its controllable nonvolatile memory switching, good scalability, compatibility with CMOS processing and potential for 3D stacking. However, several major issues need to be overcome before TiOx NVM device can be adopted in manufacturing. First, there exists a highly undesirable high-voltage stress initiation process (FORMING) before the device can switch between high and low resistance states repeatedly. By analyzing the conductive behaviors of the memory device before and after FORMING, we propose that FORMING involves breaking down an interfacial layer between its Pt electrode and the TiOx thin film, and that FORMING is not needed if the Pt-TiOx interface can be kept clean during fabrication. An in-situ fabrication process is developed for cross-point TiOx NVM device, which enables in-situ deposition of the critical layers of the memory device and thus achieves clean interfaces between Pt electrodes and TiOx film. Testing results show that FORMING is indeed eliminated for memory devices made with the in-situ fabrication process. It verifies the significance of in-situ deposition without vacuum break in the fabrication of TiOx NVM devices. Switching parameters statistics of TiOx NVM devices are studied and compared for unipolar and bipolar switching modes. RESET mechanisms are found to be different for the two switching modes: unipolar switching can be explained by thermal dissolution model, and bipolar switching by local redox reaction model. Since it is generally agreed that the memory switching of TiOx NVM devices is based on conductive filaments, reusability of these conductive filaments becomes an intriguing issue to determine the memory device's endurance. A 1X3 cross-point test structure is built to investigate whether conductive filaments can be reused after RESET. It is found that the conductive filament is destroyed during unipolar switching, while can be reused during bipolar switching. The result is a good indication that bipolar switching should have better endurance than unipolar switching. Finally a novel application of the two-terminal resistive switching NVM devices is demonstrated. To reduce SRAM leakage power, we propose a nonvolatile SRAM cell with two back-up NVM devices. This novel cell offers nonvolatile storage, thus allowing selected blocks of SRAM to be powered down during operation. There is no area penalty in this approach. Only a slight performance penalty is expected.

Research on multi-switch synchronization based on single trigger generator

NASA Astrophysics Data System (ADS)

Geng, Jiuyuan; Cheng, Xinbing; Yang, Jianhua; Yang, Xiao; Chen, Rong

2018-05-01

Multi-switch synchronous operation is an effective approach to provide high-voltage high-current for a high-power device. In this paper, we present a synchronization system with a corona stabilized triggered switch (CSTS) as main switch and an all-solid modularized quasi-square pulse forming system. In addition, this paper provides explanations of low jitter and accurate triggering of CSTS based on streamer theory. Different switches of the module are triggered by an electrical pulse created by a trigger generator, a quasi-square pulse can be created on the load. The experimental results show that it is able to switch voltages in excess of 40kV with nanosecond system jitter for three-module synchronous operation.

Working memory costs of task switching.

PubMed

Liefooghe, Baptist; Barrouillet, Pierre; Vandierendonck, André; Camos, Valérie

2008-05-01

Although many accounts of task switching emphasize the importance of working memory as a substantial source of the switch cost, there is a lack of evidence demonstrating that task switching actually places additional demands on working memory. The present study addressed this issue by implementing task switching in continuous complex span tasks with strictly controlled time parameters. A series of 4 experiments demonstrate that recall performance decreased as a function of the number of task switches and that the concurrent load of item maintenance had no influence on task switching. These results indicate that task switching induces a cost on working memory functioning. Implications for theories of task switching, working memory, and resource sharing are addressed.

Asynchronous Transfer Mode (ATM) Switch Technology and Vendor Survey

NASA Technical Reports Server (NTRS)

Berry, Noemi

1995-01-01

Asynchronous Transfer Mode (ATM) switch and software features are described and compared in order to make switch comparisons meaningful. An ATM switch's performance cannot be measured solely based on its claimed switching capacity; traffic management and congestion control are emerging as the determining factors in an ATM network's ultimate throughput. Non-switch ATM products and experiences with actual installations of ATM networks are described. A compilation of select vendor offerings as of October 1994 is provided in chart form.

Architecture design and performance evaluation of multigranularity optical networks based on optical code division multiplexing

NASA Astrophysics Data System (ADS)

Huang, Shaowei; Baba, Ken-Ichi; Murata, Masayuki; Kitayama, Ken-Ichi

2006-12-01

In traditional lambda-based multigranularity optical networks, a lambda is always treated as the basic routing unit, resulting in low wavelength utilization. On the basis of optical code division multiplexing (OCDM) technology, a novel OCDM-based multigranularity optical cross-connect (MG-OXC) is proposed. Compared with the traditional lambda-based MG-OXC, its switching capability has been extended to support fiber switching, waveband switching, lambda switching, and OCDM switching. In a network composed of OCDM-based MG-OXCs, a single wavelength can be shared by distinct label switched paths (LSPs) called OCDM-LSPs, and OCDM-LSP switching can be implemented in the optical domain. To improve the network flexibility for an OCDM-LSP provisioning, two kinds of switches enabling hybrid optical code (OC)-wavelength conversion are designed. Simulation results indicate that a blocking probability reduction of 2 orders can be obtained by deploying only five OCs to a single wavelength. Furthermore, compared with time-division-multiplexing LSP (TDM-LSP), owing to the asynchronous accessibility and the OC conversion, OCDM-LSPs have been shown to permit a simpler switch architecture and achieve better blocking performance than TDM-LSPs.

The interplay between effector binding and allostery in an engineered protein switch.

PubMed

Choi, Jay H; Xiong, Tina; Ostermeier, Marc

2016-09-01

The protein design rules for engineering allosteric regulation are not well understood. A fundamental understanding of the determinants of ligand binding in an allosteric context could facilitate the design and construction of versatile protein switches and biosensors. Here, we conducted extensive in vitro and in vivo characterization of the effects of 285 unique point mutations at 15 residues in the maltose-binding pocket of the maltose-activated β-lactamase MBP317-347. MBP317-347 is an allosteric enzyme formed by the insertion of TEM-1 β-lactamase into the E. coli maltose binding protein (MBP). We find that the maltose-dependent resistance to ampicillin conferred to the cells by the MBP317-347 switch gene (the switch phenotype) is very robust to mutations, with most mutations slightly improving the switch phenotype. We identified 15 mutations that improved switch performance from twofold to 22-fold, primarily by decreasing the catalytic activity in the absence of maltose, perhaps by disrupting interactions that cause a small fraction of MBP in solution to exist in a partially closed state in the absence of maltose. Other notable mutations include K15D and K15H that increased maltose affinity 30-fold and Y155K and Y155R that compromised switching by diminishing the ability of maltose to increase catalytic activity. The data also provided insights into normal MBP physiology, as select mutations at D14, W62, and F156 retained high maltose affinity but abolished the switch's ability to substitute for MBP in the transport of maltose into the cell. The results reveal the complex relationship between ligand binding and allostery in this engineered switch. © 2016 The Protein Society.

Atrial Function after the Atrial Switch Operation for Transposition of the Great Arteries: Comparison with Arterial Switch and Normals by Cardiovascular Magnetic Resonance.

PubMed

Franzoso, Francesca D; Wohlmuth, Christoph; Greutmann, Matthias; Kellenberger, Christian J; Oxenius, Angela; Voser, Eva M; Valsangiacomo Buechel, Emanuela R

2016-09-01

The atria serve as reservoir, conduit, and active pump for ventricular filling. The performance of the atrial baffles after atrial switch repair for transposition of the great arteries may be abnormal and impact the function of the systemic right ventricle. We sought to assess atrial function in patients after atrial repair in comparison to patients after arterial switch repair (ASO) and to controls. Using magnetic resonance imaging, atrial volumes and functional parameters were measured in 17 patients after atrial switch repair, 9 patients after ASO and 10 healthy subjects. After the atrial switch operation, the maximum volume of the pulmonary venous atrium was significantly enlarged, but not of the systemic venous atrium. In both patients groups, independently from the surgical technique used, the minimum atrial volumes were elevated, which resulted in a decreased total empting fraction compared with controls (P < .01). The passive empting volume was diminished for right atrium, but elevated for left atrium after atrial switch and normal for left atrium after ASO; however, the passive empting fraction was diminished for both right atrium and left atrium after both operations (P < .01). The active empting volume was the most affected parameter in both atria and both groups and active empting fractions were highly significantly reduced compared with controls. Atrial function is abnormal in all patients, after atrial switch and ASO repair. The cyclic volume changes, that is, atrial filling and empting, are reduced when compared with normal subjects. Thus, the atria have lost part of their capacity to convert continuous venous flow into a pulsatile ventricular filling. The function of the pulmonary venous atrium, acting as preload for the systemic right ventricle, after atrial switch is altered the most. © 2015 Wiley Periodicals, Inc.

Development of a Pressure Switched Microfluidic Cell Sorter

NASA Astrophysics Data System (ADS)

Ozbay, Baris; Jones, Alex; Gibson, Emily

2009-10-01

Lab on a chip technology allows for the replacement of traditional cell sorters with microfluidic devices which can be produced less expensively and are more compact. Additionally, the compact nature of microfluidic cell sorters may lead to the realization of their application in point-of-care medical devices. Though techniques have been demonstrated previously for sorting in microfluidic devices with optical or electro-osmotic switching, both of these techniques are expensive and more difficult to implement than pressure switching. This microfluidic cell sorter design also allows for easy integration with optical spectroscopy for identification of cell type. Our current microfluidic device was fabricated with polydimethylsiloxane (PDMS), a polymer that houses the channels, which is then chemically bonded to a glass slide. The flow of fluid through the device is controlled by pressure controllers, and the switching of the cells is accomplished with the use of a high performance pressure controller interfaced with a computer. The cells are fed through the channels with the use of hydrodynamic focusing techniques. Once the experimental setup is fully functional the objective will be to determine switching rates, explore techniques to optimize these rates, and experiment with sorting of other biomolecules including DNA.

Intelligent optical networking with photonic cross connections

NASA Astrophysics Data System (ADS)

Ceuppens, L.; Jerphagnon, Olivier L.; Lang, Jonathan; Banerjee, Ayan; Blumenthal, Daniel J.

2002-09-01

Optical amplification and dense wavelength division multiplexing (DWDM) have fundamentally changed optical transport networks. Now that these technologies are widely adopted, the bottleneck has moved from the outside line plant to nodal central offices, where electrical switching equipment has not kept pace. While OEO technology was (and still is) necessary for grooming and traffic aggregation, the transport network has dramatically changed, requiring a dramatic rethinking of how networks need to be designed and operated. While todays transport networks carry remarkable amounts of bandwidth, their optical layer is fundamentally static and provides for only simple point-to-point transport. Efficiently managing the growing number of wavelengths can only be achieved through a new breed of networking element. Photonic switching systems (PSS) can efficiently execute these functions because they are bit rate, wavelength, and protocol transparent. With their all-optical switch cores and interfaces, PSS can switch optical signals at various levels of granularity wavelength, sub band, and composite DWDM fiber levels. Though cross-connect systems with electrical switch cores are available, they perform these functions at very high capital costs and operational inefficiencies. This paper examines enabling technologies for deployment of intelligent optical transport networks (OTN), and takes a practical perspective on survivability architecture migration and implementation issues.

High-Switching-Ratio Photodetectors Based on Perovskite CH₃NH₃PbI₃ Nanowires.

PubMed

Zhang, Xin; Liu, Caichi; Ren, Gang; Li, Shiyun; Bi, Chenghao; Hao, Qiuyan; Liu, Hui

2018-05-10

Hybrid organic-inorganic perovskite materials have attracted extensive attention due to their impressive performance in photovoltaic devices. One-dimensional perovskite CH₃NH₃PbI₃ nanomaterials, possessing unique structural features such as large surface-to-volume ratio, anisotropic geometry and quantum confinement, may have excellent optoelectronic properties, which could be utilized to fabricate high-performance photodetectors. However, in comparison to CH₃NH₃PbI₃ thin films, reports on the fabrication of CH₃NH₃PbI₃ nanowires for optoelectrical application are rather limited. Herein, a two-step spin-coating process has been utilized to fabricate pure-phase and single-crystalline CH₃NH₃PbI₃ nanowires on a substrate without mesoporous TiO₂ or Al₂O₃. The size and density of CH₃NH₃PbI₃ nanowires can be easily controlled by changing the PbI₂ precursor concentration. The as-prepared CH₃NH₃PbI₃ nanowires are utilized to fabricate photodetectors, which exhibit a fairly high switching ratio of ~600, a responsivity of 55 mA/W, and a normalized detectivity of 0.5 × 10 11 jones under 532 nm light illumination (40 mW/cm²) at a very low bias voltage of 0.1 V. The as-prepared perovskite CH₃NH₃PbI₃ nanowires with excellent optoelectronic properties are regarded to be a potential candidate for high-performance photodetector application.

Intelligent switches of integrated lightwave circuits with core telecommunication functions

NASA Astrophysics Data System (ADS)

Izhaky, Nahum; Duer, Reuven; Berns, Neil; Tal, Eran; Vinikman, Shirly; Schoenwald, Jeffrey S.; Shani, Yosi

2001-05-01

We present a brief overview of a promising switching technology based on Silica on Silicon thermo-optic integrated circuits. This is basically a 2D solid-state optical device capable of non-blocking switching operation. Except of its excellent performance (insertion loss<5dB, switching time<2ms...), the switch enables additional important build-in functionalities. It enables single-to- single channel switching and single-to-multiple channel multicasting/broadcasting. In addition, it has the capability of channel weighting and variable output power control (attenuation), for instance, to equalize signal levels and compensate for unbalanced different optical input powers, or to equalize unbalanced EDFA gain curve. We examine the market segments appropriate for the switch size and technology, followed by a discussion of the basic features of the technology. The discussion is focused on important requirements from the switch and the technology (e.g., insertion loss, power consumption, channel isolation, extinction ratio, switching time, and heat dissipation). The mechanical design is also considered. It must take into account integration of optical fiber, optical planar wafer, analog electronics and digital microprocessor controls, embedded software, and heating power dissipation. The Lynx Photon.8x8 switch is compared to competing technologies, in terms of typical market performance requirements.

Tunable microwave metasurfaces for high-performance operations: dispersion compensation and dynamical switch

PubMed Central

Xu, He-Xiu; Tang, Shiwei; Ma, Shaojie; Luo, Weijie; Cai, Tong; Sun, Shulin; He, Qiong; Zhou, Lei

2016-01-01

Controlling the phase distributions on metasurfaces leads to fascinating effects such as anomalous light refraction/reflection, flat-lens focusing, and optics-vortex generation. However, metasurfaces realized so far largely reply on passive resonant meta-atoms, whose intrinsic dispersions limit such passive meta-devices’ performances at frequencies other than the target one. Here, based on tunable meta-atoms with varactor diodes involved, we establish a scheme to resolve these issues for microwave metasurfaces, in which the dispersive response of each meta-atom is precisely controlled by an external voltage imparted on the diode. We experimentally demonstrate two effects utilizing our scheme. First, we show that a tunable gradient metasurface exhibits single-mode high-efficiency operation within a wide frequency band, while its passive counterpart only works at a single frequency but exhibits deteriorated performances at other frequencies. Second, we demonstrate that the functionality of our metasurface can be dynamically switched from a specular reflector to a surface-wave convertor. Our approach paves the road to achieve dispersion-corrected and switchable manipulations of electromagnetic waves. PMID:27901088

Tunable microwave metasurfaces for high-performance operations: dispersion compensation and dynamical switch.

PubMed

Xu, He-Xiu; Tang, Shiwei; Ma, Shaojie; Luo, Weijie; Cai, Tong; Sun, Shulin; He, Qiong; Zhou, Lei

2016-11-30

Controlling the phase distributions on metasurfaces leads to fascinating effects such as anomalous light refraction/reflection, flat-lens focusing, and optics-vortex generation. However, metasurfaces realized so far largely reply on passive resonant meta-atoms, whose intrinsic dispersions limit such passive meta-devices' performances at frequencies other than the target one. Here, based on tunable meta-atoms with varactor diodes involved, we establish a scheme to resolve these issues for microwave metasurfaces, in which the dispersive response of each meta-atom is precisely controlled by an external voltage imparted on the diode. We experimentally demonstrate two effects utilizing our scheme. First, we show that a tunable gradient metasurface exhibits single-mode high-efficiency operation within a wide frequency band, while its passive counterpart only works at a single frequency but exhibits deteriorated performances at other frequencies. Second, we demonstrate that the functionality of our metasurface can be dynamically switched from a specular reflector to a surface-wave convertor. Our approach paves the road to achieve dispersion-corrected and switchable manipulations of electromagnetic waves.

Tunable microwave metasurfaces for high-performance operations: dispersion compensation and dynamical switch

NASA Astrophysics Data System (ADS)

Xu, He-Xiu; Tang, Shiwei; Ma, Shaojie; Luo, Weijie; Cai, Tong; Sun, Shulin; He, Qiong; Zhou, Lei

2016-11-01

Controlling the phase distributions on metasurfaces leads to fascinating effects such as anomalous light refraction/reflection, flat-lens focusing, and optics-vortex generation. However, metasurfaces realized so far largely reply on passive resonant meta-atoms, whose intrinsic dispersions limit such passive meta-devices’ performances at frequencies other than the target one. Here, based on tunable meta-atoms with varactor diodes involved, we establish a scheme to resolve these issues for microwave metasurfaces, in which the dispersive response of each meta-atom is precisely controlled by an external voltage imparted on the diode. We experimentally demonstrate two effects utilizing our scheme. First, we show that a tunable gradient metasurface exhibits single-mode high-efficiency operation within a wide frequency band, while its passive counterpart only works at a single frequency but exhibits deteriorated performances at other frequencies. Second, we demonstrate that the functionality of our metasurface can be dynamically switched from a specular reflector to a surface-wave convertor. Our approach paves the road to achieve dispersion-corrected and switchable manipulations of electromagnetic waves.

Spacecraft in switch matrix for wide band service applicatons in 30/20 GHz communications satellite systems

NASA Technical Reports Server (NTRS)

Cory, B. J.

1982-01-01

Bandwidth, switching speed, off-state isolation, and reliability over a ten-year mission were factors in determining the optimum available technology for satellite communications switching in 1982. A proof of concept model for a 20 x 20 coupled crossbar switch matrix designed with FET devices for microwave switching and with high speed CMOS LIS for switch crosspoint addressing was fabricated and tested. Results show the design is feasible for application in a multichannel SS-TDMA communications system. Expandibility can readily be achieved with this design. A conceptual design study for a 100 x 100 switch matrix utilizing a coupled crossbar architecture implemented with a monolithic microwave integrated circuits revealed technology needs for high capacity switch matrices.

Ultrafast Beam Switching Using Coupled VCSELs

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Goorjian, Peter

2001-01-01

We propose a new approach to performing ultrafast beam switching using two coupled Vertical-Cavity Surface-Emitting Lasers (VCSELs). The strategy is demonstrated by numerical simulation, showing a beam switching of 10 deg at 42 GHz.

A C-Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector application.

PubMed

Chekol, Solomon Amsalu; Yoo, Jongmyung; Park, Jaehyuk; Song, Jeonghwan; Sung, Changhyuck; Hwang, Hyunsang

2018-08-24

In this letter, we demonstrate a new binary ovonic threshold switching (OTS) selector device scalable down to ø30 nm based on C-Te. Our proposed selector device exhibits outstanding performance such as a high switching ratio (I on /I off  > 10 5 ), an extremely low off-current (∼1 nA), an extremely fast operating speed of <10 ns (transition time of <2 ns and delay time of <8 ns), high endurance (10 9 ), and high thermal stability (>450 °C). The observed high thermal stability is caused by the relatively small atomic size of C, compared to Te, which can effectively suppress the segregation and crystallization of Te in the OTS film. Furthermore, to confirm the functionality of the selector in a crossbar array, we evaluated a 1S-1R device by integrating our OTS device with a ReRAM (resistive random access memory) device. The 1S-1R integrated device exhibits a successful suppression of leakage current at the half-selected cell and shows an excellent read-out margin (>2 12 word lines) in a fast read operation.

Examining age-related differences in auditory attention control using a task-switching procedure.

PubMed

Lawo, Vera; Koch, Iring

2014-03-01

Using a novel task-switching variant of dichotic selective listening, we examined age-related differences in the ability to intentionally switch auditory attention between 2 speakers defined by their sex. In our task, young (M age = 23.2 years) and older adults (M age = 66.6 years) performed a numerical size categorization on spoken number words. The task-relevant speaker was indicated by a cue prior to auditory stimulus onset. The cuing interval was either short or long and varied randomly trial by trial. We found clear performance costs with instructed attention switches. These auditory attention switch costs decreased with prolonged cue-stimulus interval. Older adults were generally much slower (but not more error prone) than young adults, but switching-related effects did not differ across age groups. These data suggest that the ability to intentionally switch auditory attention in a selective listening task is not compromised in healthy aging. We discuss the role of modality-specific factors in age-related differences.

Hybrid switch for resonant power converters

DOEpatents

Lai, Jih-Sheng; Yu, Wensong

2014-09-09

A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

Joule heating and spin-transfer torque investigated on the atomic scale using a spin-polarized scanning tunneling microscope.

PubMed

Krause, S; Herzog, G; Schlenhoff, A; Sonntag, A; Wiesendanger, R

2011-10-28

The influence of a high spin-polarized tunnel current onto the switching behavior of a superparamagnetic nanoisland on a nonmagnetic substrate is investigated by means of spin-polarized scanning tunneling microscopy. A detailed lifetime analysis allows for a quantification of the effective temperature rise of the nanoisland and the modification of the activation energy barrier for magnetization reversal, thereby using the nanoisland as a local thermometer and spin-transfer torque analyzer. Both the Joule heating and spin-transfer torque are found to scale linearly with the tunnel current. The results are compared to experiments performed on lithographically fabricated magneto-tunnel junctions, revealing a very high spin-transfer torque switching efficiency in our experiments.

Switching transients in high-frequency high-power converters using power MOSFET's

NASA Technical Reports Server (NTRS)

Sloane, T. H.; Owen, H. A., Jr.; Wilson, T. G.

1979-01-01

The use of MOSFETs in a high-frequency high-power dc-to-dc converter is investigated. Consideration is given to the phenomena associated with the paralleling of MOSFETs and to the effect of stray circuit inductances on the converter circuit performance. Analytical relationships between various time constants during the turning-on and turning-off intervals are derived which provide estimates of plateau and peak levels during these intervals.

Design study and performance analysis of 12S-14P field excitation flux switching motor for hybrid electric vehicle

NASA Astrophysics Data System (ADS)

Husin, Zhafir Aizat; Sulaiman, Erwan; Khan, Faisal; Mazlan, Mohamed Mubin Aizat; Othman, Syed Muhammad Naufal Syed

2015-05-01

This paper presents a new structure of 12slot-14pole field excitation flux switching motor (FEFSM) as an alternative candidate of non-Permanent Magnet (PM) machine for HEV drives. Design study, performance analysis and optimization of field excitation flux switching machine with non-rare-earth magnet for hybrid electric vehicle drive applications is done. The stator of projected machine consists of iron core made of electromagnetic steels, armature coils and field excitation coils as the only field mmf source. The rotor is consisted of only stack of iron and hence, it is reliable and appropriate for high speed operation. The design target is a machine with the maximum torque, power and power density, more than 210Nm, 123kW and 3.5kW/kg, respectively, which competes with interior permanent magnet synchronous machine used in existing hybrid electric vehicle. Some design feasibility studies on FEFSM based on 2D-FEA and deterministic optimization method will be applied to design the proposed machine.

MOSFET Switching Circuit Protects Shape Memory Alloy Actuators

NASA Technical Reports Server (NTRS)

Gummin, Mark A.

2011-01-01

A small-footprint, full surface-mount-component printed circuit board employs MOSFET (metal-oxide-semiconductor field-effect transistor) power switches to switch high currents from any input power supply from 3 to 30 V. High-force shape memory alloy (SMA) actuators generally require high current (up to 9 A at 28 V) to actuate. SMA wires (the driving element of the actuators) can be quickly overheated if power is not removed at the end of stroke, which can damage the wires. The new analog driver prevents overheating of the SMA wires in an actuator by momentarily removing power when the end limit switch is closed, thereby allowing complex control schemes to be adopted without concern for overheating. Either an integral pushbutton or microprocessor-controlled gate or control line inputs switch current to the actuator until the end switch line goes from logic high to logic low state. Power is then momentarily removed (switched off by the MOSFET). The analog driver is suited to use with nearly any SMA actuator.

Study of switching transients in high frequency converters

NASA Technical Reports Server (NTRS)

Zinger, Donald S.; Elbuluk, Malik E.; Lee, Tony

1993-01-01

As the semiconductor technologies progress rapidly, the power densities and switching frequencies of many power devices are improved. With the existing technology, high frequency power systems become possible. Use of such a system is advantageous in many aspects. A high frequency ac source is used as the direct input to an ac/ac pulse-density-modulation (PDM) converter. This converter is a new concept which employs zero voltage switching techniques. However, the development of this converter is still in its infancy stage. There are problems associated with this converter such as a high on-voltage drop, switching transients, and zero-crossing detecting. Considering these problems, the switching speed and power handling capabilities of the MOS-Controlled Thyristor (MCT) makes the device the most promising candidate for this application. A complete insight of component considerations for building an ac/ac PDM converter for a high frequency power system is addressed. A power device review is first presented. The ac/ac PDM converter requires switches that can conduct bi-directional current and block bi-directional voltage. These bi-directional switches can be constructed using existing power devices. Different bi-directional switches for the converter are investigated. Detailed experimental studies of the characteristics of the MCT under hard switching and zero-voltage switching are also presented. One disadvantage of an ac/ac converter is that turn-on and turn-off of the switches has to be completed instantaneously when the ac source is at zero voltage. Otherwise shoot-through current or voltage spikes can occur which can be hazardous to the devices. In order for the devices to switch softly in the safe operating area even under non-ideal cases, a unique snubber circuit is used in each bi-directional switch. Detailed theory and experimental results for circuits using these snubbers are presented. A current regulated ac/ac PDM converter built using MCT's and IGBT's is evaluated.

Next generation communications satellites: multiple access and network studies

NASA Technical Reports Server (NTRS)

Meadows, H. E.; Schwartz, M.; Stern, T. E.; Ganguly, S.; Kraimeche, B.; Matsuo, K.; Gopal, I.

1982-01-01

Efficient resource allocation and network design for satellite systems serving heterogeneous user populations with large numbers of small direct-to-user Earth stations are discussed. Focus is on TDMA systems involving a high degree of frequency reuse by means of satellite-switched multiple beams (SSMB) with varying degrees of onboard processing. Algorithms for the efficient utilization of the satellite resources were developed. The effect of skewed traffic, overlapping beams and batched arrivals in packet-switched SSMB systems, integration of stream and bursty traffic, and optimal circuit scheduling in SSMB systems: performance bounds and computational complexity are discussed.

Performance and policy dimensions in internet routing

NASA Technical Reports Server (NTRS)

Mills, David L.; Boncelet, Charles G.; Elias, John G.; Schragger, Paul A.; Jackson, Alden W.; Thyagarajan, Ajit

1995-01-01

The Internet Routing Project, referred to in this report as the 'Highball Project', has been investigating architectures suitable for networks spanning large geographic areas and capable of very high data rates. The Highball network architecture is based on a high speed crossbar switch and an adaptive, distributed, TDMA scheduling algorithm. The scheduling algorithm controls the instantaneous configuration and swell time of the switch, one of which is attached to each node. In order to send a single burst or a multi-burst packet, a reservation request is sent to all nodes. The scheduling algorithm then configures the switches immediately prior to the arrival of each burst, so it can be relayed immediately without requiring local storage. Reservations and housekeeping information are sent using a special broadcast-spanning-tree schedule. Progress to date in the Highball Project includes the design and testing of a suite of scheduling algorithms, construction of software reservation/scheduling simulators, and construction of a strawman hardware and software implementation. A prototype switch controller and timestamp generator have been completed and are in test. Detailed documentation on the algorithms, protocols and experiments conducted are given in various reports and papers published. Abstracts of this literature are included in the bibliography at the end of this report, which serves as an extended executive summary.

Wide Bandgap Extrinsic Photoconductive Switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, James S.

2012-01-20

Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the widemore » bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.« less

Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices

NASA Astrophysics Data System (ADS)

Chen, C.; Gao, S.; Zeng, F.; Tang, G. S.; Li, S. Z.; Song, C.; Fu, H. D.; Pan, F.

2013-07-01

Oxides-based resistive switching memory induced by oxygen ions migration is attractive for future nonvolatile memories. Numerous works had focused their attentions on the sandwiched oxide materials for depressing the characteristic variations, but the comprehensive studies of the dependence of electrodes on the migration behavior of oxygen ions are overshadowed. Here, we investigated the interaction of various metals (Ni, Co, Al, Ti, Zr, and Hf) with oxygen atoms at the metal/Ta2O5 interface under electric stress and explored the effect of top electrode on the characteristic variations of Ta2O5-based memory device. It is demonstrated that chemically inert electrodes (Ni and Co) lead to the scattering switching characteristics and destructive gas bubbles, while the highly chemically active metals (Hf and Zr) formed a thick and dense interfacial intermediate oxide layer at the metal/Ta2O5 interface, which also degraded the resistive switching behavior. The relatively chemically active metals (Al and Ti) can absorb oxygen ions from the Ta2O5 film and avoid forming the problematic interfacial layer, which is benefit to the formation of oxygen vacancies composed conduction filaments in Ta2O5 film thus exhibit the minimum variations of switching characteristics. The clarification of oxygen ions migration behavior at the interface can lead further optimization of resistive switching performance in Ta2O5-based memory device and guide the rule of electrode selection for other oxide-based resistive switching memories.

Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.

PubMed

Li, Xiang Yuan; Shao, Xing Long; Wang, Yi Chuan; Jiang, Hao; Hwang, Cheol Seong; Zhao, Jin Shi

2017-02-09

Ta 2 O 5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, which are accompanied by the almost inevitable randomness of the switching parameters. In this work, a 1 to 2 nm-thick Ti layer was deposited on the 10 nm-thick Ta 2 O 5 RS layer, which greatly improved the RS performances, including the much-improved switching uniformity. The Ti metal layer was naturally oxidized to TiO x (x < 2) and played the role of a series resistor, whose resistance value was comparable to the on-state resistance of the Ta 2 O 5 RS layer. The series resistor TiO x efficiently suppressed the adverse effects of the voltage (or current) overshooting at the moment of switching by the appropriate voltage partake effect, which increased the controllability of the CF formation and rupture. The switching cycle endurance was increased by two orders of magnitude even during the severe current-voltage sweep tests compared with the samples without the thin TiO x layer. The Ti deposition did not induce any significant overhead to the fabrication process, making the process highly promising for the mass production of a reliable ReRAM.

Clinical and economic outcomes in patients switched to simvastatin in a community-based family medicine practice.

PubMed

Willey, V J; Reinhold, J A; Willey, K H; Kelly, B L; Cziraky, M J

2010-08-01

The introduction of a generic formulation of simvastatin has created the potential to provide significant low-density lipoprotein cholesterol (LDL-C) reduction in a highly cost-effective manner. This retrospective cohort analysis utilised electronic medical record data from a United States, community-based, independent physician family medicine practice. Patients switched from other statins or statin combinations to simvastatin by the family medicine physicians during routine patient care from January 2002 to October 2008 were identified. Equivalent statin dosing, lipid panel changes and National Cholesterol Education Program--Adult Treatment Panel III (NCEP) LDL-C goal attainment rates were compared preswitch and postswitch. The potential economic impact of simvastatin switching was also evaluated. A total of 78 patients were identified, and in 76.9% of the switches, an equipotent dose of simvastatin was prescribed. All lipid fractions showed small, non-significant increases, with LDL-C having a 2.2 mg/dl (0.06 mmol/l) increase after switching (p = 0.476). NCEP LDL-C goal attainment rates were 79.5% and 78.2% before and after switching, respectively (p = 1.00). Modelled annual cost savings associated with switching were estimated at $671.99 per patient. These results demonstrate that an independent family medicine physician practice can successfully perform statin therapeutic substitution during routine patient care. Equivalent clinical outcomes with regards to changes in lipid fractions and NCEP LDL-C goal attainment were observed in conjunction with the potential for reduced costs for patients.

Miniature CW and active internally Q-switched Nd:MgO:LiNbO/sub 3/ lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cordova-Plaza, A.; Digonnet, M.J.F.; Shaw, H.J.

1987-02-01

The authors report a 10 mW threshold mixture device in which internal Q-switching of a single Nd:MgO:LiNbO/sub 3/ crystal is achieved. Pulsewidths of 30 ns have been observed. Peak powers of 5 W have been attained with less than 60 mW of 598 nm pump power and with less than 1 percent output coupling. The switching voltage is lower than 300 V. The consequences of the elastooptic effect and the photoconductivity on device performance are investigated. A highly efficient CW laser and a low threshold CW laser made of the same material are also reported. Photorefractive damage due to themore » photovoltaic effect is found to be almost nonexistent in these lasers when pumped in the near-infrared.« less

Generation and the role of dislocations in single-crystalline phase-change In 2 Se 3 nanowires under electrical pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mafi, Elham; Tao, Xin; Zhu, Wenguang

2016-07-08

Using single crystalline In2Se3 nanowires as a platform, we have studied the RESET switching (from low to high electrical resistance) in this phase-change material under electric pulses. Particularly, we correlated the atomic-scale structural evolutions with local electrical resistance variations, by performing transmission electron microscopy and scanning Kelvin probe microscopy on the same nanowires. By coupling the experimental results with density functional theory calculations, we show that the immobile dislocations generated via vacancy condensations are responsible for the RESET switching and that the material maintains the single crystallinity during the process. This new mechanism is fundamentally different from the crystalline-amorphous transition,more » which is commonly understood as the underlying process for the RESET switching in similar phase-change materials.« less

High-power diode-pumped solid-state lasers for optical space communications

NASA Technical Reports Server (NTRS)

Koechner, Walter; Burnham, Ralph; Kasinski, Jeff; Bournes, Pat; Dibiase, Don; Le, Khoa; Marshall, Larry; Hays, Alan

1991-01-01

The design and performance of a large diode-pumped multi-stage Nd:YAG laser system for space and airborne applications will be described. The laser operates at a repetition rate of 40 Hz and produces an output either at 1.064 micron or 532 nm with an average power in the Q-switched mode of 30 W at the fundamental and 20 W at the second harmonic wavelength. The output beam is diffraction limited (TEM 00 mode) and can optionally also be operated in a single longitudinal mode. The output energy ranges from 1.25 Joule/pulse in the free lasing mode, 0.75 Joule in a 17 nsec Q-switched pulse, to 0.5 Joules/pulse at 532 nm. The overall electrical efficiency for the Q-switched second harmonic output is 4.

High-performance flexible resistive memory devices based on Al2O3:GeOx composite

NASA Astrophysics Data System (ADS)

Behera, Bhagaban; Maity, Sarmistha; Katiyar, Ajit K.; Das, Samaresh

2018-05-01

In this study a resistive switching random access memory device using Al2O3:GeOx composite thin films on flexible substrate is presented. A bipolar switching characteristic was observed for the co-sputter deposited Al2O3:GeOx composite thin films. Al/Al2O3:GeOx/ITO/PET memory device shows excellent ON/OFF ratio (∼104) and endurance (>500 cycles). GeOx nanocrystals embedded in the Al2O3 matrix have been found to play a significant role in enhancing the switching characteristics by facilitating oxygen vacancy formation. Mechanical endurance was retained even after several bending. The conduction mechanism of the device was qualitatively discussed by considering Ohmic and SCLC conduction. This flexible device is a potential candidate for next-generation electronics device.

Cognitive performance in healthy older adults relates to spontaneous switching between states of functional connectivity during rest.

PubMed

Cabral, Joana; Vidaurre, Diego; Marques, Paulo; Magalhães, Ricardo; Silva Moreira, Pedro; Miguel Soares, José; Deco, Gustavo; Sousa, Nuno; Kringelbach, Morten L

2017-07-11

Growing evidence has shown that brain activity at rest slowly wanders through a repertoire of different states, where whole-brain functional connectivity (FC) temporarily settles into distinct FC patterns. Nevertheless, the functional role of resting-state activity remains unclear. Here, we investigate how the switching behavior of resting-state FC relates with cognitive performance in healthy older adults. We analyse resting-state fMRI data from 98 healthy adults previously categorized as being among the best or among the worst performers in a cohort study of >1000 subjects aged 50+ who underwent neuropsychological assessment. We use a novel approach focusing on the dominant FC pattern captured by the leading eigenvector of dynamic FC matrices. Recurrent FC patterns - or states - are detected and characterized in terms of lifetime, probability of occurrence and switching profiles. We find that poorer cognitive performance is associated with weaker FC temporal similarity together with altered switching between FC states. These results provide new evidence linking the switching dynamics of FC during rest with cognitive performance in later life, reinforcing the functional role of resting-state activity for effective cognitive processing.

Switching between Spatial Stimulus-Response Mappings: A Developmental Study of Cognitive Flexibility

ERIC Educational Resources Information Center

Crone, Eveline A.; Ridderinkhof, K. Richard; Worm, Mijkje; Somsen, Riek J. M.; van der Molen, Maurits W.

2004-01-01

Four different age groups (8-9-year-olds, 11-12-year-olds, 13-15-year-olds and young adults) performed a spatial rule-switch task in which the sorting rule had to be detected on the basis of feedback or on the basis of switch cues. Performance errors were examined on the basis of a recently introduced method of error scoring for the Wisconsin Card…

Cognitive load selectively influences the interruptive effect of pain on attention.

PubMed

Moore, David J; Eccleston, Christopher; Keogh, Edmund

2017-10-01

Pain is known to interrupt attentional performance. Such interference effects seem to occur preferentially for tasks that are complex and/or difficult. However, few studies have directly manipulated memory load in the context of pain interference to test this view. Therefore, this study examines the effect of experimental manipulations of both memory load and pain on 3 tasks previously found to be sensitive to pain interference. Three experiments were conducted. A different task was examined in each experiment, each comprising of a high- and low-cognitive load versions of the task. Experiment 1 comprised an attention span (n-back) task, experiment 2 an attention switching task, and experiment 3 a divided attention task. Each task was conducted under painful and nonpainful conditions. Within the pain condition, an experimental thermal pain induction protocol was administered at the same time participants completed the task. The load manipulations were successful in all experiments. Pain-related interference occurred under the high-load condition but only for the attention span task. No effect of pain was found on either the attentional switching or divided attention task. These results suggest that while cognitive load may influence the interruptive effect of pain on attention, this effect may be selective. Because pain affected the high-load version of the n-back task but did not interrupt performance on attentional switching or dual-task paradigms, this means that our findings did not completely support our hypotheses. Future research should explore further the parameters and conditions under which pain-related interference occurs.

High Voltage, Fast-Switching Module for Active Control of Magnetic Fields and Edge Plasma Currents

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth; Prager, James; Slobodov, Ilia

2016-10-01

Fast, reliable, real-time control of plasma is critical to the success of magnetic fusion science. High voltage and current supplies are needed to mitigate instabilities in all experiments as well as disruption events in large scale tokamaks for steady-state operation. Silicon carbide (SiC) MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities; however, these devices are limited to 1.2-1.7 kV devices. As fusion enters the long-pulse and burning plasma eras, efficiency of power switching will be important. Eagle Harbor Technologies (EHT), Inc. developing a high voltage SiC MOSFET module that operates at 10 kV. This switch module utilizes EHT gate drive technology, which has demonstrated the ability to increase SiC MOSFET switching efficiency. The module will allow more rapid development of high voltage switching power supplies at lower cost necessary for the next generation of fast plasma feedback and control. EHT is partnering with the High Beta Tokamak group at Columbia to develop detailed high voltage module specifications, to ensure that the final product meets the needs of the fusion science community.

Electronic switching circuit uses complementary non-linear components

NASA Technical Reports Server (NTRS)

Zucker, O. S.

1972-01-01

Inherent switching properties of saturable inductors and storage diodes are combined to perform large variety of electronic functions, such as pulse shaping, gating, and multiplexing. Passive elements replace active switching devices in generation of complex waveforms.

Pixelized Device Control Actuators for Large Adaptive Optics

NASA Technical Reports Server (NTRS)

Knowles, Gareth J.; Bird, Ross W.; Shea, Brian; Chen, Peter

2009-01-01

A fully integrated, compact, adaptive space optic mirror assembly has been developed, incorporating new advances in ultralight, high-performance composite mirrors. The composite mirrors use Q-switch matrix architecture-based pixelized control (PMN-PT) actuators, which achieve high-performance, large adaptive optic capability, while reducing the weight of present adaptive optic systems. The self-contained, fully assembled, 11x11x4-in. (approx.= 28x28x10-cm) unit integrates a very-high-performance 8-in. (approx.=20-cm) optic, and has 8-kHz true bandwidth. The assembled unit weighs less than 15 pounds (=6.8 kg), including all mechanical assemblies, power electronics, control electronics, drive electronics, face sheet, wiring, and cabling. It requires just three wires to be attached (power, ground, and signal) for full-function systems integration, and uses a steel-frame and epoxied electronics. The three main innovations are: 1. Ultralightweight composite optics: A new replication method for fabrication of very thin composite 20-cm-diameter laminate face sheets with good as-fabricated optical figure was developed. The approach is a new mandrel resin surface deposition onto previously fabricated thin composite laminates. 2. Matrix (regenerative) power topology: Waveform correction can be achieved across an entire face sheet at 6 kHz, even for large actuator counts. In practice, it was found to be better to develop a quadrant drive, that is, four quadrants of 169 actuators behind the face sheet. Each quadrant has a single, small, regenerative power supply driving all 169 actuators at 8 kHz in effective parallel. 3. Q-switch drive architecture: The Q-switch innovation is at the heart of the matrix architecture, and allows for a very fast current draw into a desired actuator element in 120 counts of a MHz clock without any actuator coupling.

Anticipatory control through associative learning of subliminal relations: invisible may be better than visible.

PubMed

Farooqui, Ausaf A; Manly, Tom

2015-03-01

We showed that anticipatory cognitive control could be unconsciously instantiated through subliminal cues that predicted enhanced future control needs. In task-switching experiments, one of three subliminal cues preceded each trial. Participants had no conscious experience or knowledge of these cues, but their performance was significantly improved on switch trials after cues that predicted task switches (but not particular tasks). This utilization of subliminal information was flexible and adapted to a change in cues predicting task switches and occurred only when switch trials were difficult and effortful. When cues were consciously visible, participants were unable to discern their relevance and could not use them to enhance switch performance. Our results show that unconscious cognition can implicitly use subliminal information in a goal-directed manner for anticipatory control, and they also suggest that subliminal representations may be more conducive to certain forms of associative learning. © The Author(s) 2015.

Lifelong Bilingualism Maintains Neural Efficiency for Cognitive Control in Aging

PubMed Central

Gold, Brian T.; Kim, Chobok; Johnson, Nathan F.; Kryscio, Richard J.; Smith, Charles D.

2013-01-01

Recent behavioral data have shown that lifelong bilingualism can maintain youthful cognitive control abilities in aging. Here, we provide the first direct evidence of a neural basis for the bilingual cognitive control boost in aging. Two experiments were conducted, using a perceptual task switching paradigm, and including a total of 110 participants. In Experiment 1, older adult bilinguals showed better perceptual switching performance than their monolingual peers. In Experiment 2, younger and older adult monolinguals and bilinguals completed the same perceptual task switching experiment while fMRI was performed. Typical age-related performance reductions and fMRI activation increases were observed. However, like younger adults, bilingual older adults outperformed their monolingual peers while displaying decreased activation in left lateral frontal cortex and cingulate cortex. Critically, this attenuation of age-related over-recruitment associated with bilingualism was directly correlated with better task switching performance. In addition, the lower BOLD response in frontal regions accounted for 82% of the variance in the bilingual task switching reaction time advantage. These results suggest that lifelong bilingualism offsets age-related declines in the neural efficiency for cognitive control processes. PMID:23303919

High PRF high current switch

DOEpatents

Moran, Stuart L.; Hutcherson, R. Kenneth

1990-03-27

A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

Analysis of the packet formation process in packet-switched networks

NASA Astrophysics Data System (ADS)

Meditch, J. S.

Two new queueing system models for the packet formation process in packet-switched telecommunication networks are developed, and their applications in process stability, performance analysis, and optimization studies are illustrated. The first, an M/M/1 queueing system characterization of the process, is a highly aggregated model which is useful for preliminary studies. The second, a marked extension of an earlier M/G/1 model, permits one to investigate stability, performance characteristics, and design of the packet formation process in terms of the details of processor architecture, and hardware and software implementations with processor structure and as many parameters as desired as variables. The two new models together with the earlier M/G/1 characterization span the spectrum of modeling complexity for the packet formation process from basic to advanced.

Inflexible Minds: Impaired Attention Switching in Recent-Onset Schizophrenia

PubMed Central

Smid, Henderikus G. O. M.; Martens, Sander; de Witte, Marc R.; Bruggeman, Richard

2013-01-01

Impairment of sustained attention is assumed to be a core cognitive abnormality in schizophrenia. However, this seems inconsistent with a recent hypothesis that in schizophrenia the implementation of selection (i.e., sustained attention) is intact but the control of selection (i.e., switching the focus of attention) is impaired. Mounting evidence supports this hypothesis, indicating that switching of attention is a bigger problem in schizophrenia than maintaining the focus of attention. To shed more light on this hypothesis, we tested whether schizophrenia patients are impaired relative to controls in sustaining attention, switching attention, or both. Fifteen patients with recent-onset schizophrenia and fifteen healthy volunteers, matched on age and intelligence, performed sustained attention and attention switching tasks, while performance and brain potential measures of selective attention were recorded. In the sustained attention task, patients did not differ from the controls on these measures. In the attention switching task, however, patients showed worse performance than the controls, and early selective attention related brain potentials were absent in the patients while clearly present in the controls. These findings support the hypothesis that schizophrenia is associated with an impairment of the mechanisms that control the direction of attention (attention switching), while the mechanisms that implement a direction of attention (sustained attention) are intact. PMID:24155980

Switch Detection in Preschoolers' Cognitive Flexibility

ERIC Educational Resources Information Center

Chevalier, Nicolas; Wiebe, Sandra A.; Huber, Kristina L.; Espy, Kimberly Andrews

2011-01-01

The current study addressed the role of switch detection in cognitive flexibility by testing the effect of transition cues (i.e., cues that directly signal the need to switch or maintain a given task goal) in a cued set-shifting paradigm at 5 years of age. Children performed better, especially on switch trials, when transition cues were combined…

Hand preference and skilled hand performance among individuals with successful rightward conversions of the writing hand.

PubMed

Porac, Clare

2009-03-01

Searleman and Porac (2001) studied lateral preference patterns among successfully switched left-hand writers, left-hand writers with no switch pressure history, and left-hand writers who did not switch when pressured. They concluded that left-handers who successfully shift to right-hand writing are following an inherent right-sided lateralisation pattern that they already possess. Searleman and Porac suggested that the neural mechanisms that control lateralisation in the successfully switched individuals are systematically different from those of other groups of left-handers. I examined patterns of skilled and less-skilled hand preference and skilled hand performance in a sample of 394 adults (ages 18-94 years). The sample contained successfully switched left-hand writers, left-handers pressured to shift who remained left-hand writers, left-handers who did not experience shift pressures, and right-handers. Both skilled hand preference and skilled hand performance were shifted towards the right side in successfully switched left-hand writers. This group also displayed mixed patterns of hand preference and skilled hand performance in that they were not as right-sided as "natural" right-handers nor were they as left-sided as the two left-hand writing groups, which did not differ from each other. The experience of being pressured to switch to right-hand writing was not sufficient to shift lateralisation patterns; the pressures must be experienced in the context of an underlying neural control mechanism that is amenable to change as a result of these external influences.

Research on plasma-puff initiation of high Coulomb transfer switches

NASA Technical Reports Server (NTRS)

Venable, Demetrius D.; Han, Kwang S.

1993-01-01

The plasma-puff triggering mechanism based on hypocycloidal pinch geometry was investigated to determine the optimal operating conditions for an azimuthally uniform surface flashover which initiates plasma-puff under wide ranges of fill gas pressures of Ar, He and N2. Research is presented and resulting conference papers are attached. These papers include 'Characteristics of Plasma-Puff Trigger for an Inverse-Pinch Plasma Switch'; 'Ultra-High-Power Plasma Switch INPUTS for Pulse Power Systems'; 'Characteristics of Switching Plasma in an Inverse-Pinch Switch'; 'Comparative Study of INPIStron and Spark Gap'; and 'INPIStron Switched Pulsed Power for Dense Plasma Pinches.'

Small solar electric system components demonstration. [thermal storage modules for Brayton systems

NASA Technical Reports Server (NTRS)

1980-01-01

The design and testing of high temperature thermal storage modules (TSM) are reported. The test goals were to demonstrate the thermocline propagation in the TSM, to measure the steepness of the thermocline, and to measure the effectiveness of the TSM when used in a Brayton system. In addition, a high temperature valve suitable for switching the TSM at temperatures to 1700 F is described and tested. Test results confirm the existence of a sharp thermocline under design conditions. The thermal profile was steeper than expected and was insensitive to air density over the range of the test conditions. Experiments were performed which simulated the airflow of a small Brayton engine, 20 KWe, having a pair of thermal storage modules acting as efficient recuperators. Low pressure losses, averaging 12 inches of water, and high effectiveness, 93% for a 15 minute switching cycle, were measured. The insulation surrounding the ceramic core limited thermal losses to approximately 1 KWt. The hot valve was operated over 100 cycles and performed well at temperatures up to 1700 F.

Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET

NASA Astrophysics Data System (ADS)

Kobayashi, Kenya; Sudo, Masaki; Omura, Ichiro

2018-04-01

Field-plate trench MOSFETs (FP-MOSFETs), with the features of ultralow on-resistance and very low gate–drain charge, are currently the mainstream of high-performance applications and their advancement is continuing as low-voltage silicon power devices. However, owing to their structure, their output capacitance (C oss), which leads to main power loss, remains to be a problem, especially in megahertz switching. In this study, we propose a structure-based capacitance model of FP-MOSFETs for calculating power loss easily under various conditions. Appropriate equations were modeled for C oss curves as three divided components. Output charge (Q oss) and stored energy (E oss) that were calculated using the model corresponded well to technology computer-aided design (TCAD) simulation, and we validated the accuracy of the model quantitatively. In the power loss analysis of FP-MOSFETs, turn-off loss was sufficiently suppressed, however, mainly Q oss loss increased depending on switching frequency. This analysis reveals that Q oss may become a significant issue in next-generation high-efficiency FP-MOSFETs.