High Stability Performance of Quinary Indium Gallium Zinc Aluminum Oxide Films and Thin-Film Transistors Deposited Using Vapor Cooling Condensation Method

NASA Astrophysics Data System (ADS)

Lin, Yung-Hao; Lee, Ching-Ting

2017-08-01

High-quality indium gallium zinc aluminum oxide (IGZAO) thin films with various Al contents have been deposited using the vapor cooling condensation method. The electron mobility of the IGZAO films was improved by 89.4% on adding Al cation to IGZO film. The change in the electron concentration and mobility of the IGZAO films was 7.3% and 7.0%, respectively, when the temperature was changed from 300 K to 225 K. These experimental results confirm the high performance and stability of the IGZAO films. The performance stability mechanisms of IGZAO thin-film transistors (TFTs) were investigated in comparison with IGZO TFTs.

Extraordinary Corrosion Protection from Polymer-Clay Nanobrick Wall Thin Films.

PubMed

Schindelholz, Eric J; Spoerke, Erik D; Nguyen, Hai-Duy; Grunlan, Jaime C; Qin, Shuang; Bufford, Daniel C

2018-06-20

Metals across all industries demand anticorrosion surface treatments and drive a continual need for high-performing and low-cost coatings. Here we demonstrate polymer-clay nanocomposite thin films as a new class of transparent conformal barrier coatings for protection in corrosive atmospheres. Films assembled via layer-by-layer deposition, as thin as 90 nm, are shown to reduce copper corrosion rates by >1000× in an aggressive H 2 S atmosphere. These multilayer nanobrick wall coatings hold promise as high-performing anticorrosion treatment alternatives to costlier, more toxic, and less scalable thin films, such as graphene, hexavalent chromium, or atomic-layer-deposited metal oxides.

Thin film resonator technology.

PubMed

Lakin, Kenneth M

2005-05-01

Advances in wireless systems have placed increased demands on high performance frequency control devices for operation into the microwave range. With spectrum crowding, high bandwidth requirements, miniaturization, and low cost requirements as a background, the thin film resonator technology has evolved into the mainstream of applications. This technology has been under development for over 40 years in one form or another, but it required significant advances in integrated circuit processing to reach microwave frequencies and practical manufacturing for high-volume applications. This paper will survey the development of the thin film resonator technology and describe the core elements that give rise to resonators and filters for today's high performance wireless applications.

Highly flexible electronics from scalable vertical thin film transistors.

PubMed

Liu, Yuan; Zhou, Hailong; Cheng, Rui; Yu, Woojong; Huang, Yu; Duan, Xiangfeng

2014-03-12

Flexible thin-film transistors (TFTs) are of central importance for diverse electronic and particularly macroelectronic applications. The current TFTs using organic or inorganic thin film semiconductors are usually limited by either poor electrical performance or insufficient mechanical flexibility. Here, we report a new design of highly flexible vertical TFTs (VTFTs) with superior electrical performance and mechanical robustness. By using the graphene as a work-function tunable contact for amorphous indium gallium zinc oxide (IGZO) thin film, the vertical current flow across the graphene-IGZO junction can be effectively modulated by an external gate potential to enable VTFTs with a highest on-off ratio exceeding 10(5). The unique vertical transistor architecture can readily enable ultrashort channel devices with very high delivering current and exceptional mechanical flexibility. With large area graphene and IGZO thin film available, our strategy is intrinsically scalable for large scale integration of VTFT arrays and logic circuits, opening up a new pathway to highly flexible macroelectronics.

Quantification of Quercetin and Rutin from Benincasa hispida Seeds and Carissa Congesta Roots by High-performance Thin Layer Chromatography and High-performance Liquid Chromatography.

PubMed

Doshi, Gaurav Mahesh; Une, Hemant Devidas

2016-01-01

In Indian Ayurvedic system, Benincasa hispida (BH) and Carissa congesta (CC) are well-known plants used for major and minor ailments. BH has been regarded as Kushmanda, whereas CC has been used in immune-related disorders of the human system. Quercetin and rutin identified from the vast plethora of plant extracts have proved to possess ethnopharmacological relevance. In present studies, we have determined quercetin and rutin in terms of percentage in BH seeds and CC roots by high-performance thin layer chromatography (HPTLC) and high-performance liquid chromatography (HPLC). After extraction and phytochemical screening, the extracts were subjected to quantification for the presence of quercetin and rutin by HPTLC and HPLC. HPTLC showed quercetin as 44.60, 27.13% and rutin as 32.00, 36.31% w/w, whereas HPLC revealed quercetin as 34.00, 35.00% and rutin as 21.99, 45.03% w/v in BH and CC extracts, respectively. The BH and CC extracts have elucidated peaks that were corresponding with standard peaks on undertaking chromatographic studies. Quercetin and rutin are isolated from BH seeds and CC roots by High Performance. Thin Layer Chromatography and High Performance Liquid Chromatography. HPTLC revealed presence of quercetin as 44.60, 27.13 % and rutin as 32.00, 36.31 % w/w. HPLC revealed presence of quercetin as 34.00, 35.00 % and rutin as 21.99, 45.03 % w/v. Abbreviation Used: HPTLC: High Performance Thin Layer Chromatography; HPLC: High Pressure Liquid Chromatography, UV: Ultraviolet, CC: Carissa congesta, BH: Benincasa hispida.

Monolithically interconnected silicon-film™ module technology

NASA Astrophysics Data System (ADS)

DelleDonne, E. J.; Ford, D. H.; Hall, R. B.; Ingram, A. E.; Rand, J. A.; Barnett, A. M.

1999-03-01

AstroPower is developing an advanced thin-silicon-based, photovoltaic module product. A low-cost monolithic interconnected device is being integrated into a module that combines the design and process features of advanced light trapped, thin-silicon solar cells. This advanced product incorporates a low-cost substrate, a nominally 50-μm thick grown silicon layer with minority carrier diffusion lengths exceeding the active layer thickness, light trapping due to back-surface reflection, and back-surface passivation. The thin silicon layer enables high solar cell performance and can lead to a module conversion efficiency as high as 19%. These performance design features, combined with low-cost manufacturing using relatively low-cost capital equipment, continuous processing and a low-cost substrate, will lead to high-performance, low-cost photovoltaic panels.

Highly-efficient, flexible piezoelectric PZT thin film nanogenerator on plastic substrates.

PubMed

Park, Kwi-Il; Son, Jung Hwan; Hwang, Geon-Tae; Jeong, Chang Kyu; Ryu, Jungho; Koo, Min; Choi, Insung; Lee, Seung Hyun; Byun, Myunghwan; Wang, Zhong Lin; Lee, Keon Jae

2014-04-23

A highly-efficient, flexible piezoelectric PZT thin film nanogenerator is demonstrated using a laser lift-off (LLO) process. The PZT thin film nanogenerator harvests the highest output performance of ∼200 V and ∼150 μA·cm(-2) from regular bending motions. Furthermore, power sources generated from a PZT thin film nanogenerator, driven by slight human finger bending motions, successfully operate over 100 LEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Advantages of thin silicon solar cells for use in space

NASA Technical Reports Server (NTRS)

Denman, O. S.

1978-01-01

A system definition study on the Solar Power Satellite System showed that a thin, 50 micrometers, silicon solar cell has significant advantages. The advantages include a significantly lower performance degradation in a radiation environment and high power-to-mass ratios. The advantages of such cells for an employment in space is further investigated. Basic questions concerning the operation of solar cells are considered along with aspects of radiation induced performance degradation. The question arose in this connection how thin a silicon solar cell had to be to achieve resistance to radiation degradation and still have good initial performance. It was found that single-crystal silicon solar cells could be as thin as 50 micrometers and still develop high conversion efficiencies. It is concluded that the use of 50 micrometer silicon solar cells in space-based photovoltaic power systems would be advantageous.

MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jie Guan; Atul Verma; Nguyen Minh

2003-04-01

This document summarizes the technical progress from September 2002 to March 2003 for the program, Material and Process Development Leading to Economical High-Performance Thin-Film Solid Oxide Fuel Cells, contract number DE-AC26-00NT40711. The causes have been identified for the unstable open circuit voltage (OCV) and low performance exhibited by the anode-supported lanthanum gallate based cells from the earlier development. Promising results have been obtained in the area of synthesis of electrolyte and cathode powders, which showed excellent sintering and densification at low temperatures. The fabrication of cells using tapecalendering process for anode-supported thin lanthanum gallate electrolyte cells and their performance optimizationmore » is in progress.« less

Standardisation of Gymnema sylvestre R.Br. by high-performance thin-layer chromatography: an improved method.

PubMed

Raju, Valivarthi S R; Kannababu, S; Subbaraju, Gottumukkala V

2006-01-01

An improved high-performance thin-layer chromatographic (HPTLC) method for the standardisation of Gymnema sylvestre is reported. The method involves the initial hydrolysis of gymnemic acids, the active ingredients, to a common aglycone followed by the quantitative estimation of gymnemagenin. The present method rectifies an error found in an HPTLC method reported recently.

Ultrahigh-Performance Cu2ZnSnS4 Thin Film and Its Application in Microscale Thin-Film Lithium-Ion Battery: Comparison with SnO2.

PubMed

Lin, Jie; Guo, Jianlai; Liu, Chang; Guo, Hang

2016-12-21

To develop a high-performance anode for thin-film lithium-ion batteries (TFBs, with a total thickness on the scale of micrometers), a Cu 2 ZnSnS 4 (CZTS) thin film is fabricated by magnetron sputtering and exhibits an ultrahigh performance of 950 mAh g -1 even after 500 cycles, which is the highest among the reported CZTS for lithium storage so far. The characterization and electrochemical tests reveal that the thin-film structure and additional reactions both contribute to the excellent properties. Furthermore, the microscale TFBs with effective footprints of 0.52 mm 2 utilizing the CZTS thin film as anode are manufactured by microfabrication techniques, showing superior capability than the analogous TFBs with the SnO 2 thin film as anode. This work demonstrates the advantages of exploiting thin-film electrodes and novel materials into micropower sources by electronic manufacture methods.

Thin film thermocouples for high temperature measurement on ceramic materials

NASA Technical Reports Server (NTRS)

Holanda, Raymond

1992-01-01

Thin film thermocouples have been developed for use on metal parts in jet engines to 1000 C. However, advanced propulsion systems are being developed that will use ceramic materials and reach higher temperatures. The purpose of this work is to develop thin film thermocouples for use on ceramic materials. The thin film thermocouples are Pt13Rh/Pt fabricated by the sputtering process. Lead wires are attached using the parallel-gap welding process. The ceramic materials are silicon nitride, silicon carbide, aluminum oxide, and mullite. Both steady state and thermal cycling furnace tests were performed in the temperature range to 1500 C. High-heating-rate tests were performed in an arc lamp heat-flux-calibration facility. The fabrication of the thin film thermocouples is described. The thin film thermocouple output was compared to a reference wire thermocouple. Drift of the thin film thermocouples was determined, and causes of drift are discussed. The results of high-heating-rate tests up to 2500 C/sec are presented. The stability of the ceramic materials is examined. It is concluded that Pt13Rh/Pt thin film thermocouples are capable of meeting lifetime goals of 50 hours or more up to temperatures of 1500 C depending on the stability of the particular ceramic substrate.

Quantification of Quercetin and Rutin from Benincasa hispida Seeds and Carissa Congesta Roots by High-performance Thin Layer Chromatography and High-performance Liquid Chromatography

PubMed Central

Doshi, Gaurav Mahesh; Une, Hemant Devidas

2016-01-01

Objective: In Indian Ayurvedic system, Benincasa hispida (BH) and Carissa congesta (CC) are well-known plants used for major and minor ailments. BH has been regarded as Kushmanda, whereas CC has been used in immune-related disorders of the human system. Quercetin and rutin identified from the vast plethora of plant extracts have proved to possess ethnopharmacological relevance. Materials and Methods: In present studies, we have determined quercetin and rutin in terms of percentage in BH seeds and CC roots by high-performance thin layer chromatography (HPTLC) and high-performance liquid chromatography (HPLC). After extraction and phytochemical screening, the extracts were subjected to quantification for the presence of quercetin and rutin by HPTLC and HPLC. Results: HPTLC showed quercetin as 44.60, 27.13% and rutin as 32.00, 36.31% w/w, whereas HPLC revealed quercetin as 34.00, 35.00% and rutin as 21.99, 45.03% w/v in BH and CC extracts, respectively. Conclusion: The BH and CC extracts have elucidated peaks that were corresponding with standard peaks on undertaking chromatographic studies. SUMMARY Quercetin and rutin are isolated from BH seeds and CC roots by High Performance. Thin Layer Chromatography and High Performance Liquid Chromatography. HPTLC revealed presence of quercetin as 44.60, 27.13 % and rutin as 32.00, 36.31 % w/w. HPLC revealed presence of quercetin as 34.00, 35.00 % and rutin as 21.99, 45.03 % w/v. Abbreviation Used: HPTLC: High Performance Thin Layer Chromatography; HPLC: High Pressure Liquid Chromatography, UV: Ultraviolet, CC: Carissa congesta, BH: Benincasa hispida PMID:26941534

High Performance and Highly Reliable ZnO Thin Film Transistor Fabricated by Atomic Layer Deposition for Next Generation Displays

DTIC Science & Technology

2011-08-19

zinc oxide ( ZnO ) thin film as an active channel layer in TFT has become of great interest owing to their specific...630-0192 Japan Phone: +81-743-72-6060 Fax: +81-743-72-6069 E-mail: uraoka@ms.naist.jp Keywords: zinc oxide , thin film transistors , atomic layer...deposition Symposium topic: Transparent Semiconductors Oxides [Abstract] In this study, we fabricated TFTs using ZnO thin film as the

Poly-silicon TFT AM-OLED on thin flexible metal substrates

NASA Astrophysics Data System (ADS)

Afentakis, Themis; Hatalis, Miltiadis K.; Voutsas, Apostolos T.; Hartzell, John W.

2003-05-01

Thin metal foils present an excellent alternative to polymers for the fabrication of large area, flexible displays. Their main advantage spurs from their ability to withstand higher temperatures during processing; microelectronic fabrication at elevated temperatures offers the ability to utilize a variety of crystallization processes for the active layer of devices and thermally grown gate dielectrics. This can lead to high performance (high mobility, low threshold voltage) low cost and highly reliable thin film transistors. In some cases, the conductive substrate can also be used to provide power to the active devices, thus reducing layout complexity. This paper discusses the first successful attempt to design and fabricate a variety of active matrix organic light emitting diode displays on thin, flexible stainless steel foils. Different pixel architectures, such as two- and four-transistor implementations, and addressing modes, such as voltage- or current-driven schemese are examined. This work clearly demonstrates the advantages associated with the fabrication of OLED displays on thin metal foils, which - through roll-to-roll processing - can potentially result in revolutionizing today's display processing, leading to a new generation of low cost, high performance versatile display systems.

Multi-oxide active layer deposition using Applied Materials Pivot array coater for high-mobility metal oxide TFT

NASA Astrophysics Data System (ADS)

Park, Hyun Chan; Scheer, Evelyn; Witting, Karin; Hanika, Markus; Bender, Marcus; Hsu, Hao Chien; Yim, Dong Kil

2015-11-01

By controlling a thin indium tin oxide (ITO), indium zinc oxide interface layer between gate insulator and indium gallium zinc oxide (IGZO), the thin-film transistor (TFT) performance can reach higher mobility as conventional IGZO as well as superior stability. For large-area display application, Applied Materials static PVD array coater (Applied Materials GmbH & Co. KG, Alzenau, Germany) using rotary targets has been developed to enable uniform thin layer deposition in display industry. Unique magnet motion parameter optimization in Pivot sputtering coater is shown to provide very uniform thin ITO layer to reach TFT performance with high mobility, not only on small scale, but also on Gen8.5 (2500 × 2200 mm glass size) production system.

Thin Film Electrodes with an Integral Current Collection Grid for Use with Solid Electrolytes

NASA Technical Reports Server (NTRS)

Ryan, M. A.; Kisor, A.; Williams, R. M.; Jeffries-Nakamura, B.; O'Connor, D.

1994-01-01

Thin film, high performance electrodes which can operate in high temperature environments are necessary for many devices which use a solid electrolyte. Electrodes of rhodium-tungsten alloy have been deposited on solid electrolyte using photolytic chemical vapor deposition (PCVD). A technique for depositing electrodes and current collection grids simultaneously has been developed using the prenucleation characteristics of PCVD. This technique makes it possible to fabricate electrodes which allow vapor transport through the thin (<1 (micro)m) portions of the electrode while integral thick grid lines improve the electronic conductivity of the electrode, thus improving overall performance.

Enhanced thermoelectric performance in three-dimensional superlattice of topological insulator thin films

PubMed Central

2012-01-01

We show that certain three-dimensional (3D) superlattice nanostructure based on Bi2Te3 topological insulator thin films has better thermoelectric performance than two-dimensional (2D) thin films. The 3D superlattice shows a predicted peak value of ZT of approximately 6 for gapped surface states at room temperature and retains a high figure of merit ZT of approximately 2.5 for gapless surface states. In contrast, 2D thin films with gapless surface states show no advantage over bulk Bi2Te3. The enhancement of the thermoelectric performance originates from a combination of the reduction of lattice thermal conductivity by phonon-interface scattering, the high mobility of the topologically protected surface states, the enhancement of Seebeck coefficient, and the reduction of electron thermal conductivity by energy filtering. Our study shows that the nanostructure design of topological insulators provides a possible new way of ZT enhancement. PMID:23072433

Enhanced thermoelectric performance in three-dimensional superlattice of topological insulator thin films.

PubMed

Fan, Zheyong; Zheng, Jiansen; Wang, Hui-Qiong; Zheng, Jin-Cheng

2012-10-16

We show that certain three-dimensional (3D) superlattice nanostructure based on Bi2Te3 topological insulator thin films has better thermoelectric performance than two-dimensional (2D) thin films. The 3D superlattice shows a predicted peak value of ZT of approximately 6 for gapped surface states at room temperature and retains a high figure of merit ZT of approximately 2.5 for gapless surface states. In contrast, 2D thin films with gapless surface states show no advantage over bulk Bi2Te3. The enhancement of the thermoelectric performance originates from a combination of the reduction of lattice thermal conductivity by phonon-interface scattering, the high mobility of the topologically protected surface states, the enhancement of Seebeck coefficient, and the reduction of electron thermal conductivity by energy filtering. Our study shows that the nanostructure design of topological insulators provides a possible new way of ZT enhancement.

Quantitative analysis of psilocybin and psilocin in psilocybe baeocystis (Singer and Smith) by high-performance liquid chromatography and by thin-layer chromatography.

PubMed

Beug, M W; Bigwood, J

1981-03-27

Rapid quantification of psilocybin and psilocin in extracts of wild mushrooms is accomplished by reversed-phase high-performance liquid chromatography with paired-ion reagents. Nine solvent systems and three solid supports are evaluated for their efficiency in separating psilocybin, psilocin and other components of crude mushroom extracts by thin-layer chromatography.

Enhanced electrochemical performance of monoclinic WO3 thin film with redox additive aqueous electrolyte.

PubMed

Shinde, Pragati A; Lokhande, Vaibhav C; Chodankar, Nilesh R; Ji, Taeksoo; Kim, Jin Hyeok; Lokhande, Chandrakant D

2016-12-01

To achieve the highest electrochemical performance for supercapacitor, it is very essential to find out a suitable pair of an active electrode material and an electrolyte. In the present work, a simple approach is employed to enhance the supercapacitor performance of WO3 thin film. The WO3 thin film is prepared by a simple and cost effective chemical bath deposition method and its electrochemical performance is tested in conventional (H2SO4) and redox additive [H2SO4+hydroquinone (HQ)] electrolytes. Two-fold increment in electrochemical performance for WO3 thin film is observed in redox additive aqueous electrolyte compared to conventional electrolyte. WO3 thin film showed maximum specific capacitance of 725Fg(-1), energy density of 25.18Whkg(-1) at current density of 7mAcm(-2) with better cycling stability in redox electrolyte. This strategy provides the versatile way for designing the high performance energy storage devices. Copyright © 2016 Elsevier Inc. All rights reserved.

A Solution Processable High-Performance Thermoelectric Copper Selenide Thin Film.

PubMed

Lin, Zhaoyang; Hollar, Courtney; Kang, Joon Sang; Yin, Anxiang; Wang, Yiliu; Shiu, Hui-Ying; Huang, Yu; Hu, Yongjie; Zhang, Yanliang; Duan, Xiangfeng

2017-06-01

A solid-state thermoelectric device is attractive for diverse technological areas such as cooling, power generation and waste heat recovery with unique advantages of quiet operation, zero hazardous emissions, and long lifetime. With the rapid growth of flexible electronics and miniature sensors, the low-cost flexible thermoelectric energy harvester is highly desired as a potential power supply. Herein, a flexible thermoelectric copper selenide (Cu 2 Se) thin film, consisting of earth-abundant elements, is reported. The thin film is fabricated by a low-cost and scalable spin coating process using ink solution with a truly soluble precursor. The Cu 2 Se thin film exhibits a power factor of 0.62 mW/(m K 2 ) at 684 K on rigid Al 2 O 3 substrate and 0.46 mW/(m K 2 ) at 664 K on flexible polyimide substrate, which is much higher than the values obtained from other solution processed Cu 2 Se thin films (<0.1 mW/(m K 2 )) and among the highest values reported in all flexible thermoelectric films to date (≈0.5 mW/(m K 2 )). Additionally, the fabricated thin film shows great promise to be integrated with the flexible electronic devices, with negligible performance change after 1000 bending cycles. Together, the study demonstrates a low-cost and scalable pathway to high-performance flexible thin film thermoelectric devices from relatively earth-abundant elements. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

NASA Astrophysics Data System (ADS)

Jeon, Jun-Young; Ha, Tae-Jun

2017-08-01

In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

Porous CrN thin films by selectively etching CrCuN for symmetric supercapacitors

NASA Astrophysics Data System (ADS)

Wei, Binbin; Mei, Gui; Liang, Hanfeng; Qi, Zhengbing; Zhang, Dongfang; Shen, Hao; Wang, Zhoucheng

2018-05-01

Transition metal nitrides are regarded as a new class of excellent electrode materials for high-performance supercapacitors due to their superior chemical stability and excellent electrical conductivity. We synthesize successfully the porous CrN thin films for binder-free supercapacitor electrodes by reactive magnetron co-sputtering and selective chemical etching. The porous CrN thin film electrodes exhibit high-capacitance performance (31.3 mF cm-2 at 1.0 mA cm-2) and reasonable cycling stability (94% retention after 20000 cycles). Moreover, the specific capacitance is more than two-fold higher than that of the CrN thin film electrodes in previous work. In addition, a symmetric supercapacitor device with a maximum energy density of 14.4 mWh cm-3 and a maximum power density of 6.6 W cm-3 is achieved. These findings demonstrate that the porous CrN thin films will have potential applications in supercapacitors.

Morphological and crystalline characterization of pulsed laser deposited pentacene thin films for organic transistor applications

NASA Astrophysics Data System (ADS)

Pereira, Antonio; Bonhommeau, Sébastien; Sirotkin, Sergey; Desplanche, Sarah; Kaba, Mamadouba; Constantinescu, Catalin; Diallo, Abdou Karim; Talaga, David; Penuelas, Jose; Videlot-Ackermann, Christine; Alloncle, Anne-Patricia; Delaporte, Philippe; Rodriguez, Vincent

2017-10-01

We show that high-quality pentacene (P5) thin films of high crystallinity and low surface roughness can be produced by pulsed laser deposition (PLD) without inducing chemical degradation of the molecules. By using Raman spectroscopy and X-ray diffraction measurements, we also demonstrate that the deposition of P5 on Au layers result in highly disordered P5 thin films. While the P5 molecules arrange within the well-documented 1.54-nm thin-film phase on high-purity fused silica substrates, this ordering is indeed destroyed upon introducing an Au interlayer. This observation may be one explanation for the low electrical performances measured in P5-based organic thin film transistors (OTFTs) deposited by laser-induced forward transfer (LIFT).

High-Performance and Omnidirectional Thin-Film Amorphous Silicon Solar Cell Modules Achieved by 3D Geometry Design.

PubMed

Yu, Dongliang; Yin, Min; Lu, Linfeng; Zhang, Hanzhong; Chen, Xiaoyuan; Zhu, Xufei; Che, Jianfei; Li, Dongdong

2015-11-01

High-performance thin-film hydrogenated amorphous silicon solar cells are achieved by combining macroscale 3D tubular substrates and nanoscaled 3D cone-like antireflective films. The tubular geometry delivers a series of advantages for large-scale deployment of photovoltaics, such as omnidirectional performance, easier encapsulation, decreased wind resistance, and easy integration with a second device inside the glass tube. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-Performance Protonic Ceramic Fuel Cells with Thin-Film Yttrium-Doped Barium Cerate-Zirconate Electrolytes on Compositionally Gradient Anodes.

PubMed

Bae, Kiho; Lee, Sewook; Jang, Dong Young; Kim, Hyun Joong; Lee, Hunhyeong; Shin, Dongwook; Son, Ji-Won; Shim, Joon Hyung

2016-04-13

In this study, we used a compositionally gradient anode functional layer (AFL) consisting of Ni-BaCe(0.5)Zr(0.35)Y(0.15)O(3-δ) (BCZY) with increasing BCZY contents toward the electrolyte-anode interface for high-performance protonic ceramic fuel cells. It is identified that conventional homogeneous AFLs fail to stably accommodate a thin film of BCZY electrolyte. In contrast, a dense 2 μm thick BCZY electrolyte was successfully deposited onto the proposed gradient AFL with improved adhesion. A fuel cell containing this thin electrolyte showed a promising maximum peak power density of 635 mW cm(-2) at 600 °C, with an open-circuit voltage of over 1 V. Impedance analysis confirmed that minimizing the electrolyte thickness is essential for achieving a high power output, suggesting that the anode structure is important in stably accommodating thin electrolytes.

Roles of Fullerene-Based Interlayers in Enhancing the Performance of Organometal Perovskite Thin-Film Solar Cells

DOE PAGES

Liang, Po-Wei; Chueh, Chu-Chen; Williams, Spencer T.; ...

2015-02-27

Roles of fullerene-based interlayers in enhancing the performance of organometal perovskite thin-film solar cells are elucidated. By studying various fullerenes, a clear correlation between the electron mobility of fullerenes and the resulting performance of derived devices is determined. The metallic characteristics of the bilayer perovskite/fullerene field-effect transistor indicates an effective charge redistribution occurring at the corresponding interface. Lastly, a conventional perovskite thin-film solar cell derived from the C 60 electron-transporting layer (ETL) affords a high power conversion efficiency of 15.4%.

Electrochemical and microstructural characterization of magnetron-sputtered ATO thin films as Li–ion storage materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ouyang, Pan; Zhang, Hong; Chen, Wenhao

2015-01-15

Highlights: • Nano-structured ATO thin films prepared by RF magnetron sputtering at 25 °C, 100 °C and 200 °C, respectively. • ATO thin films show a high reversible capacity and high rate performance. • Electrochemical reaction mechanism of the ATO thin film was revealed by transmission electron microscopy. - Abstract: Sb-doped SnO{sub 2} (ATO) nanostructured thin films were prepared by using radio frequency magnetron sputtering at the substrate temperatures of 25 °C, 100 °C and 200 °C, respectively. All the ATO thin films have the similar redox characteristics in the cyclic voltammetry measurements. The ATO thin film sputtered at 200more » °C shows the lowest charge transfer resistance and best electrochemical performance, and has a high reversible capacity of 679 mA h g{sup −1} at 100 mA g{sup −1} after 200 charge–discharge cycles and high rate performance of 483 mA h g{sup −1} at 800 mA g{sup −1}. The electrochemical mechanisms were investigated by analyzing the phase evolution of the ATO electrodes that had been electrochemically induced at various stages. The results reveal that the ATO underwent reversible lithiation/delithiation processes during the electrochemical cycles, i.e., the SnO{sub 2} reacted with Li{sup +} to produce metallic Sn and followed by the formation of the Li{sub x}Sn alloys during discharge process, and then Li{sub x}Sn alloys de-alloyed, Sn reacted with Li{sub 2}O, and even partially formed SnO{sub 2} during charge process.« less

New strategy to promote conversion efficiency using high-index nanostructures in thin-film solar cells

PubMed Central

Wang, DongLin; Su, Gang

2014-01-01

Nano-scaled metallic or dielectric structures may provide various ways to trap light into thin-film solar cells for improving the conversion efficiency. In most schemes, the textured active layers are involved into light trapping structures that can provide perfect optical benefits but also bring undesirable degradation of electrical performance. Here we propose a novel approach to design high-performance thin-film solar cells. In our strategy, a flat active layer is adopted for avoiding electrical degradation, and an optimization algorithm is applied to seek for an optimized light trapping structure for the best optical benefit. As an example, we show that the efficiency of a flat a-Si:H thin-film solar cell can be promoted close to the certified highest value. It is also pointed out that, by choosing appropriate dielectric materials with high refractive index (>3) and high transmissivity in wavelength region of 350 nm–800 nm, the conversion efficiency of solar cells can be further enhanced. PMID:25418477

Wide-Bandgap CIAS Thin-film Photovoltaics with Transparent Back Contacts for Next-Generation Single and Multijunction Devices

NASA Technical Reports Server (NTRS)

Woods, Lawrence M.; Kalla, Ajay; Gonzalez, Damian; Ribelin, Rosine

2005-01-01

Future spacecraft and high-altitude airship (HAA) technologies will require high array specific power (W/kg), which can be met using thin-film photovoltaics (PV) on lightweight and flexible substrates. It has been calculated that the thin-film array technology, including the array support structure, begins to exceed the specific power of crystalline multi-junction arrays when the thin-film device efficiencies begin to exceed 12%. Thin-film PV devices have other advantages in that they are more easily integrated into HAA s, and are projected to be much less costly than their crystalline PV counterparts. Furthermore, it is likely that only thin-film array technology will be able to meet device specific power requirements exceeding 1 kW/kg (photovoltaic and integrated substrate/blanket mass only). Of the various thin-film technologies, single junction and radiation resistant CuInSe2 (CIS) and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of thin-film device performance, with the best efficiency, reaching 19.2% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys could achieve the highest levels of thin-film space and HAA solar array performance.

High-Performance Organic Vertical Thin Film Transistor Using Graphene as a Tunable Contact.

PubMed

Liu, Yuan; Zhou, Hailong; Weiss, Nathan O; Huang, Yu; Duan, Xiangfeng

2015-11-24

Here we present a general strategy for the fabrication of high-performance organic vertical thin film transistors (OVTFTs) based on the heterostructure of graphene and different organic semiconductor thin films. Utilizing the unique tunable work function of graphene, we show that the vertical carrier transport across the graphene-organic semiconductor junction can be effectively modulated to achieve an ON/OFF ratio greater than 10(3). Importantly, with the OVTFT design, the channel length is determined by the organic thin film thickness rather than by lithographic resolution. It can thus readily enable transistors with ultrashort channel lengths (<200 nm) to afford a delivering current greatly exceeding that of conventional planar TFTs, thus enabling a respectable operation frequency (up to 0.4 MHz) while using low-mobility organic semiconductors and low-resolution lithography. With this vertical device architecture, the entire organic channel is sandwiched and naturally protected between the source and drain electrodes, which function as the self-passivation layer to ensure stable operation of both p- and n-type OVTFTs in ambient conditions and enable complementary circuits with voltage gain. The creation of high-performance and highly robust OVTFTs can open up exciting opportunities in large-area organic macroelectronics.

Recent progress in high-mobility thin-film transistors based on multilayer 2D materials

NASA Astrophysics Data System (ADS)

Hong, Young Ki; Liu, Na; Yin, Demin; Hong, Seongin; Kim, Dong Hak; Kim, Sunkook; Choi, Woong; Yoon, Youngki

2017-04-01

Two-dimensional (2D) layered semiconductors are emerging as promising candidates for next-generation thin-film electronics because of their high mobility, relatively large bandgap, low-power switching, and the availability of large-area growth methods. Thin-film transistors (TFTs) based on multilayer transition metal dichalcogenides or black phosphorus offer unique opportunities for next-generation electronic and optoelectronic devices. Here, we review recent progress in high-mobility transistors based on multilayer 2D semiconductors. We describe the theoretical background on characterizing methods of TFT performance and material properties, followed by their applications in flexible, transparent, and optoelectronic devices. Finally, we highlight some of the methods used in metal-semiconductor contacts, hybrid structures, heterostructures, and chemical doping to improve device performance.

Misfit layered Ca{sub 3}Co{sub 4}O{sub 9} as a high figure of merit p-type transparent conducting oxide film through solution processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aksit, M.; Kolli, S. K.; Slauch, I. M.

Ca{sub 3}Co{sub 4}O{sub 9} thin films synthesized through solution processing are shown to be high-performing, p-type transparent conducting oxides (TCOs). The synthesis method is a cost-effective and scalable process that consists of sol-gel chemistry, spin coating, and heat treatments. The process parameters can be varied to produce TCO thin films with sheet resistance as low as 5.7 kΩ/sq (ρ ≈ 57 mΩ cm) or with average visible range transparency as high as 67%. The most conductive Ca{sub 3}Co{sub 4}O{sub 9} TCO thin film has near infrared region optical transmission as high as 85%. The figure of merit (FOM) for the top-performing Ca{sub 3}Co{submore » 4}O{sub 9} thin film (151 MΩ{sup −1}) is higher than FOM values reported in the literature for all other solution processed, p-type TCO thin films and higher than most others prepared by physical vapor deposition and chemical vapor deposition. Transparent conductivity in misfit layered oxides presents new opportunities for TCO compositions.« less

Electrochemically synthesized nanocrystalline spinel thin film for high performance supercapacitor

NASA Astrophysics Data System (ADS)

Gupta, Vinay; Gupta, Shubhra; Miura, Norio

Spinels are not known for their supercapacitive nature. Here, we have explored electrochemically synthesized nanostructured NiCo 2O 4 spinel thin-film electrode for electrochemical supercapacitors. The nanostructured NiCo 2O 4 spinel thin film exhibited a high specific capacitance value of 580 F g -1 and an energy density of 32 Wh kg -1 at the power density of 4 kW kg -1, accompanying with good cyclic stability.

Sol-gel-processed yttrium-doped NiO as hole transport layer in inverted perovskite solar cells for enhanced performance

NASA Astrophysics Data System (ADS)

Hu, Zijun; Chen, Da; Yang, Pan; Yang, Lijun; Qin, Laishun; Huang, Yuexiang; Zhao, Xiaochong

2018-05-01

In this work, high-performance inverted planar perovskite solar cells (PSCs) using sol-gel processed Y-doped NiO thin films as hole transport layer (HTL) were demonstrated. Y-doped NiO thin films containing different Y doping concentrations were successfully prepared through a simple sol-gel process. The Y doping could significantly improve the electrical conductivity of NiO thin film, and the photovoltaic performance of Y-doped NiO HTL-based PSC devices outperformed that of the pristine NiO HTL-based device. Notably, the PSC using a 5%Y-NiO HTL exhibited the champion performance with an open-circuit voltage (Voc) of 1.00 V, a short circuit current density (Jsc) of 23.82 mA cm-2, a fill factor (FF) of 68% and a power conversion efficiency (PCE) of 16.31%, resulting in a 27.62% enhancement in PCE in comparison with the NiO device. The enhanced performance of the Y-doped NiO device could be attributed to the improved hole mobility, the high quality compact active layer morphology, the more efficient charge extraction from perovskite absorber as well as the lower recombination probability of charge carriers. Thus, this work provides a simple and effective approach to improve the electrical conductivity of p-type NiO thin films for use as a promising HTL in high performance PSCs.

Solution-Processable High-Purity Semiconducting SWCNTs for Large-Area Fabrication of High-Performance Thin-Film Transistors.

PubMed

Gu, Jianting; Han, Jie; Liu, Dan; Yu, Xiaoqin; Kang, Lixing; Qiu, Song; Jin, Hehua; Li, Hongbo; Li, Qingwen; Zhang, Jin

2016-09-01

For the large-area fabrication of thin-film transistors (TFTs), a new conjugated polymer poly[9-(1-octylonoyl)-9H-carbazole-2,7-diyl] is developed to harvest ultrahigh-purity semiconducting single-walled carbon nanotubes. Combined with spectral and nanodevice characterization, the purity is estimated up to 99.9%. High density and uniform network formed by dip-coating process is liable to fabricate high-performance TFTs on a wafer-scale and the as-fabricated TFTs exhibit a high degree of uniformity. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of various oxygen partial pressures on Ti-doped ZnO thin film transistors fabricated on flexible plastic substrate

NASA Astrophysics Data System (ADS)

Cui, Guodong; Han, Dedong; Yu, Wen; Shi, Pan; Zhang, Yi; Huang, Lingling; Cong, Yingying; Zhou, Xiaoliang; Zhang, Xiaomi; Zhang, Shengdong; Zhang, Xing; Wang, Yi

2016-04-01

By applying a novel active layer of titanium zinc oxide (TiZO), we have successfully fabricated fully transparent thin-film transistors (TFTs) with a bottom gate structure fabricated on a flexible plastic substrate at low temperatures. The effects of various oxygen partial pressures during channel deposition were studied to improve the device performance. We found that the oxygen partial pressure during channel deposition has a significant impact on the performance of TiZO TFTs, and that the TFT developed under 10% oxygen partial pressure exhibits superior performance with a low threshold voltage (V th) of 2.37 V, a high saturation mobility (μsat) of 125.4 cm2 V-1 s-1, a steep subthreshold swing (SS) of 195 mV/decade and a high I on/I off ratio of 3.05 × 108. These results suggest that TiZO thin films are promising for high-performance fully transparent flexible TFTs and displays.

Electrodeposited Structurally Stable V2O5 Inverse Opal Networks as High Performance Thin Film Lithium Batteries.

PubMed

Armstrong, Eileen; McNulty, David; Geaney, Hugh; O'Dwyer, Colm

2015-12-09

High performance thin film lithium batteries using structurally stable electrodeposited V2O5 inverse opal (IO) networks as cathodes provide high capacity and outstanding cycling capability and also were demonstrated on transparent conducting oxide current collectors. The superior electrochemical performance of the inverse opal structures was evaluated through galvanostatic and potentiodynamic cycling, and the IO thin film battery offers increased capacity retention compared to micron-scale bulk particles from improved mechanical stability and electrical contact to stainless steel or transparent conducting current collectors from bottom-up electrodeposition growth. Li(+) is inserted into planar and IO structures at different potentials, and correlated to a preferential exposure of insertion sites of the IO network to the electrolyte. Additionally, potentiodynamic testing quantified the portion of the capacity stored as surface bound capacitive charge. Raman scattering and XRD characterization showed how the IO allows swelling into the pore volume rather than away from the current collector. V2O5 IO coin cells offer high initial capacities, but capacity fading can occur with limited electrolyte. Finally, we demonstrate that a V2O5 IO thin film battery prepared on a transparent conducting current collector with excess electrolyte exhibits high capacities (∼200 mAh g(-1)) and outstanding capacity retention and rate capability.

OP-AMPS on Flexible Substrates with Printable Materials

DTIC Science & Technology

2011-08-10

Zinc Tin Oxide Thin - Film - Transistor Enhancement...II196, 2010. [3] D. Geng, D. H. Kang, and J. Jang, "High-Performance Amorphous Indium-Gallium- Zinc - Oxide Thin - Film Transistor With a Self-Aligned...B., Dodabalapur, A., “Band transport and mobility edge in amorphous solution-processed zinc tin oxide thin - film transistors ”, Applied

Barium ferrite thin-film recording media

NASA Astrophysics Data System (ADS)

Sui, Xiaoyu; Scherge, Matthias; Kryder, Mark H.; Snyder, John E.; Harris, Vincent G.; Koon, Norman C.

1996-03-01

Both longitudinal and perpendicular barium ferrite thin films are being pursued as overcoatless magnetic recording media. In this paper, prior research on thin-film Ba ferrite is reviewed and the most recent results are presented. Self-textured high-coercivity longitudinal Ba ferrite thin films have been achieved using conventional rf diode sputtering. Microstructural studies show that c-axis in-plane oriented grains have a characteristic acicular shape, while c-axis perpendicularly oriented grains have a platelet shape. Extended X-ray absorption fine structure (EXAFS) measurements indicate that the crystal orientations are predetermined by the structural anisotropy in the as-sputtered 'amorphous' state. Recording tests on 1500 Oe coercivity longitudinal Ba ferrite disks show performance comparable with that of a 1900 Oe Co alloy disk. To further improve the recording performance, both grain size and aspect ratio need to be reduced. Initial tribological tests indicate high hardness of Ba ferrite thin films. However, surface roughness needs to be reduced. For future ultrahigh-density contact recording, it is believed that perpendicular recording may be used. A thin Pt underlayer has been found to be capable of producing Ba ferrite thin films with excellent c-axis perpendicular orientation.

Superthin Solar Cells Based on AIIIBV/Ge Heterostructures

NASA Astrophysics Data System (ADS)

Pakhanov, N. A.; Pchelyakov, O. P.; Vladimirov, V. M.

2017-11-01

A comparative analysis of the prospects of creating superthin, light-weight, and highly efficient solar cells based on AIIIBV/InGaAs and AIIIBV/Ge heterostructures is performed. Technological problems and prospects of each variant are discussed. A method of thinning of AIIIBV/Ge heterostructures with the use of an effective temporary carrier is proposed. The method allows the process to be performed almost with no risk of heterostructure fracture, thinning of the Ge junction down to several tens of micrometers (or even several micrometers), significant enhancement of the yield of good structures, and also convenient and reliable transfer of thinned solar cells to an arbitrary light and flexible substrate. Such a technology offers a possibility of creating high-efficiency thin and light solar cells for space vehicles on the basis of mass-produced AIIIBV/Ge heterostructures.

Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

PubMed

Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

2016-02-10

Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement.

Development of Thin Film Thermocouples on Ceramic Materials for Advanced Propulsion System Applications

NASA Technical Reports Server (NTRS)

Holanda, R.

1992-01-01

Thin film thermocouples have been developed for use on metal parts in jet engines to 1000 c. However, advanced propulsion systems are being developed that will use ceramic materials and reach higher temperatures. The purpose of this work is to develop thin film thermocouples for use on ceramic materials. The new thin film thermocouples are Pt13Rh/Pt fabricated by the sputtering process. Lead wires are attached using the parallel-gap welding process. The ceramic materials tested are silicon nitride, silicon carbide, aluminum oxide, and mullite. Both steady state and thermal cycling furnace tests were performed in the temperature range to 1500 C. High-heating-rate tests were performed in an arc lamp heat-flux-calibration facility. The fabrication of the thin film thermocouples is described. The thin film thermocouple output was compared to a reference wire thermocouple. Drift of the thin film thermocouples was determined, and causes of drift are discussed. The results of high heating rate tests up to 2500 C/sec are presented. The stability of the ceramic materials is examined. It is concluded that Pt13Rh/Pt thin film thermocouples are capable of meeting lifetime goals of 50 hours or more up to temperature of 1500 C depending on the stability of the particular ceramic substrate.

Development of thin film thermocouples on ceramic materials for advanced propulsion system applications

NASA Technical Reports Server (NTRS)

Holanda, Raymond

1993-01-01

Thin film thermocouples were developed for use on metal parts in jet engines to 1000 C. However, advanced propulsion systems are being developed that will use ceramic materials and reach higher temperatures. The purpose is to develop thin film thermocouples for use on ceramic materials. The new thin film thermocouples are Pt13Rh/Pt fabricated by the sputtering process. Lead wires are attached using the parallel-gap welding process. The ceramic materials tested are silicon nitride, silicon carbide, aluminum oxide, and mullite. Both steady state and thermal cycling furnace tests were performed in the temperature range to 1500 C. High-heating-rate tests were performed in an arc lamp heat-flux-calibration facility. The fabrication of the thin film thermocouples is described. The thin film thermocouple output was compared to a reference wire thermocouple. Drift of the thin film thermocouples was determined, and causes of drift are discussed. The results of high heating rate tests up to 2500 C/sec are presented. The stability of the ceramic materials is examined. It is concluded that Pt13Rh/Pt thin film thermocouples are capable of meeting lifetime goals of 50 hr or more up to temperatures of 1500 C depending on the stability of the particular ceramic substrate.

High performance direct methanol fuel cell with thin electrolyte membrane

NASA Astrophysics Data System (ADS)

Wan, Nianfang

2017-06-01

A high performance direct methanol fuel cell is achieved with thin electrolyte membrane. 320 mW cm-2 of peak power density and over 260 mW cm-2 at 0.4 V are obtained when working at 90 °C with normal pressure air supply. It is revealed that the increased anode half-cell performance with temperature contributes primarily to the enhanced performance at elevated temperature. From the comparison of iR-compensated cathode potential of methanol/air with that of H2/air fuel cell, the impact of methanol crossover on cathode performance decreases with current density and becomes negligible at high current density. Current density is found to influence fuel efficiency and methanol crossover significantly from the measurement of fuel efficiency at different current density. At high current density, high fuel efficiency can be achieved even at high temperature, indicating decreased methanol crossover.

A photoelectrochemical (PEC) study on graphene oxide based hematite thin films heterojunction (R-GO/Fe2O3)

NASA Astrophysics Data System (ADS)

Sharma, Poonam; Zachariah, Michael; Ehrman, Sheryl; Shrivastava, Rohit; Dass, Sahab; Satsangi, Vibha; Michael Zachariah, Sheryl Ehrman Collaboration; Rohit Shrivastava, Sahab Dass Collaboration; Vibha R Satsangi, Poonam Sharma Team

2013-03-01

Graphene has an excellent electronic conductivity, a high theoretical surface area of 2630 m2/g and excellent mechanical properties and, thus, is a promising component for high-performance electrode materials. Following this, GO has been used to modify the PEC response of photoactive material hematite thin films in PEC cell. A reduced graphene oxide/iron oxide (R-GO/Fe2O3) thin film structure has been successfully prepared on ITO by directly growing iron oxide particles on the thermally reduced graphene oxide sheets prepared from suspension of exfoliated graphene oxide. R-GO/Fe2O3 thin films were tested in PEC cell and offered ten times higher photocurrent density than pristine Fe2O3 thin film sample. XRD, SEM, EDS, UV-Vis, Mott-Schottky and Raman studies were carried out to study spectro-electrochemical properties. Enhanced PEC performance of these photoelectrodes was attributed to its porous morphology, improved conductivity upon favorable carrier transfer across the oxides interface.

High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

NASA Astrophysics Data System (ADS)

Ahn, Min-Ju; Cho, Won-Ju

2017-10-01

In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

Electrochemical Deposition of Lanthanum Telluride Thin Films and Nanowires

NASA Astrophysics Data System (ADS)

Chi, Su (Ike); Farias, Stephen; Cammarata, Robert

2013-03-01

Tellurium alloys are characterized by their high performance thermoelectric properties and recent research has shown nanostructured tellurium alloys display even greater performance than bulk equivalents. Increased thermoelectric efficiency of nanostructured materials have led to significant interests in developing thin film and nanowire structures. Here, we report on the first successful electrodeposition of lanthanum telluride thin films and nanowires. The electrodeposition of lanthanum telluride thin films is performed in ionic liquids at room temperature. The synthesis of nanowires involves electrodepositing lanthanum telluride arrays into anodic aluminum oxide (AAO) nanoporous membranes. These novel procedures can serve as an alternative means of simple, inexpensive and laboratory-environment friendly methods to synthesize nanostructured thermoelectric materials. The thermoelectric properties of thin films and nanowires will be presented to compare to current state-of-the-art thermoelectric materials. The morphologies and chemical compositions of the deposited films and nanowires are characterized using SEM and EDAX analysis.

Highly spectrum-selective ultraviolet photodetector based on p-NiO/n-IGZO thin film heterojunction structure.

PubMed

Li, H K; Chen, T P; Hu, S G; Li, X D; Liu, Y; Lee, P S; Wang, X P; Li, H Y; Lo, G Q

2015-10-19

Ultraviolet photodetector with p-n heterojunction is fabricated by magnetron sputtering deposition of n-type indium gallium zinc oxide (n-IGZO) and p-type nickel oxide (p-NiO) thin films on ITO glass. The performance of the photodetector is largely affected by the conductivity of the p-NiO thin film, which can be controlled by varying the oxygen partial pressure during the deposition of the p-NiO thin film. A highly spectrum-selective ultraviolet photodetector has been achieved with the p-NiO layer with a high conductivity. The results can be explained in terms of the "optically-filtering" function of the NiO layer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Jun, E-mail: lijun_yt@163.com; Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072; Huang, Chuan-Xin

Graphical abstract: This work reports the Ba content on thin film transistor based on a novel BaZnSnO semiconductor using solution process. - Highlights: • No reports about BaZnSnO thin film using solution process. • BaZnSnO thin film transistor (TFT) was firstly fabricated. • BaZnSnO-TFT shows a acceptable performace. • Influence of Ba content on BaZnSnO-TFT. - Abstract: A novel BaZnSnO semiconductor is fabricated using solution process and the influence of Ba addition on the structure, the chemical state of oxygen and electrical performance of BaZnSnO thin films are investigated. A high performance BaZnSnO-based thin film transistor with 15 mol% Bamore » is obtained, showing a saturation mobility of 1.94 cm{sup 2}/V s, a threshold voltage of 3.6 V, an on/off current ratio of 6.2 × 10{sup 6}, a subthreshold swing of 0.94 V/decade, and a good bias stability. Transistors with solution processed BaZnSnO films are promising candidates for the development of future large-area, low-cost and high-performance electronic devices.« less

High-mobility pyrene-based semiconductor for organic thin-film transistors.

PubMed

Cho, Hyunduck; Lee, Sunyoung; Cho, Nam Sung; Jabbour, Ghassan E; Kwak, Jeonghun; Hwang, Do-Hoon; Lee, Changhee

2013-05-01

Numerous conjugated oligoacenes and polythiophenes are being heavily studied in the search for high-mobility organic semiconductors. Although many researchers have designed fused aromatic compounds as organic semiconductors for organic thin-film transistors (OTFTs), pyrene-based organic semiconductors with high mobilities and on-off current ratios have not yet been reported. Here, we introduce a new pyrene-based p-type organic semiconductor showing liquid crystal behavior. The thin film characteristics of this material are investigated by varying the substrate temperature during the deposition and the gate dielectric condition using the surface modification with a self-assembled monolayer, and systematically studied in correlation with the performances of transistor devices with this compound. OTFT fabricated under the optimum deposition conditions of this compound, namely, 1,6-bis(5'-octyl-2,2'-bithiophen-5-yl)pyrene (BOBTP) shows a high-performance transistor behavior with a field-effect mobility of 2.1 cm(2) V(-1) s(-1) and an on-off current ratio of 7.6 × 10(6) and enhanced long-term stability compared to the pentacene thin-film transistor.

High Performance Thin layer Chromatography: Densitometry Method for Determination of Rubraxanthone in the Stem Bark Extract of Garcinia cowa Roxb.

PubMed

Hamidi, Dachriyanus; Aulia, Hilyatul; Susanti, Meri

2017-01-01

Garcinia cowa is a medicinal plant widely grown in Southeast Asia and tropical countries. Various parts of this plant have been used in traditional folk medicine. The bark, latex, and root have been used as an antipyretic agent, while fruit and leaves have been used as an expectorant, for indigestion and improvement of blood circulation. This study aims to determine the concentration of rubraxanthone found in ethyl acetate extract of the stem bark of G. cowa by the high-performance thin-layer chromatography (HPTLC). HPTLC method was performed on precoated silica gel G 60 F254 plates using an HPTLC system with a developed mobile-phase system of chloroform: ethyl acetate: methanol: formic acid (86:6:3:5). A volume of 5 μL of standard and sample solutions was applied to the chromatographic plates. The plates were developed in saturated mode of twin trough chamber at room temperature. The method was validated based on linearity, accuracy, precision, limit of detection (LOD), limit of quantification (LOQ), and specificity. The spots were observed at ultraviolet 243 nm. The linearity of rubraxanthone was obtained between 52.5 and 157.5 ppm/spot. The LOD and LOQ were found to be 4.03 and 13.42 ppm/spot, respectively. The proposed method showed good linearity, precision, accuracy, and high sensitivity. Therefore, it may be applied for the quantification of rubraxanthone in ethyl acetate extract of the stem bark of G. cowa . High performance thin layer chromatography (HPTLC) method provides rapid qualitative and quantitative estimation of rubraxanthone as a marker com¬pound in G. cowa extract used for commercial productRubraxanthone found in ethyl acetate extracts of G. cowa was successfully quantified using HPTLC method. Abbreviations Used : TLC: Thin-layer chromatography, HPTLC: High-performance thin-layer chromatography, LOD: Limit of detection, LOQ: Limit of quantification, ICH: International Conference on Harmonization.

Hydrothermal performance of catalyst supports

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elam, Jeffrey W.; Marshall, Christopher L.; Libera, Joseph A.

A high surface area catalyst with a mesoporous support structure and a thin conformal coating over the surface of the support structure. The high surface area catalyst support is adapted for carrying out a reaction in a reaction environment where the thin conformal coating protects the support structure within the reaction environment. In various embodiments, the support structure is a mesoporous silica catalytic support and the thin conformal coating comprises a layer of metal oxide resistant to the reaction environment which may be a hydrothermal environment.

Method for Aluminum Oxide Thin Films Prepared through Low Temperature Atomic Layer Deposition for Encapsulating Organic Electroluminescent Devices

PubMed Central

Li, Hui-Ying; Liu, Yun-Fei; Duan, Yu; Yang, Yong-Qiang; Lu, Yi-Nan

2015-01-01

Preparation of dense alumina (Al2O3) thin film through atomic layer deposition (ALD) provides a pathway to achieve the encapsulation of organic light emitting devices (OLED). Unlike traditional ALD which is usually executed at higher reaction n temperatures that may affect the performance of OLED, this application discusses the development on preparation of ALD thin film at a low temperature. One concern of ALD is the suppressing effect of ambient temperature on uniformity of thin film. To mitigate this issue, the pumping time in each reaction cycle was increased during the preparation process, which removed reaction byproducts and inhibited the formation of vacancies. As a result, the obtained thin film had both high uniformity and density properties, which provided an excellent encapsulation performance. The results from microstructure morphology analysis, water vapor transmission rate, and lifetime test showed that the difference in uniformity between thin films prepared at low temperatures, with increased pumping time, and high temperatures was small and there was no obvious influence of increased pumping time on light emitting performance. Meanwhile, the permeability for water vapor of the thin film prepared at a low temperature was found to reach as low as 1.5 × 10−4 g/(m2·day) under ambient conditions of 25 °C and 60% relative humidity, indicating a potential extension in the lifetime for the OLED. PMID:28787960

Long-term performance analysis of CIGS thin-film PV modules

NASA Astrophysics Data System (ADS)

Dhere, Neelkanth G.; Kaul, Ashwani; Pethe, Shirish A.

2011-09-01

Current accelerated qualification tests of photovoltaic (PV) modules mostly assist in avoiding infant mortality but can neither duplicate changes occurring in the field nor can predict useful lifetime. Therefore, outdoor monitoring of fielddeployed thin-film PV modules was undertaken at FSEC with goals of assessing their performance in hot and humid climate under high system voltage operation and to correlate the PV performance with the meteorological parameters. Significant and comparable degradation rate of -5.13% and -4.5% per year was found by PV USA type regression analysis for the positive and negative strings respectively of 40W glass-to-glass CIGS thin-film PV modules in the hot and humid climate of Florida. With the current-voltage measurements it was found that the performance degradation within the PV array was mainly due to a few (8-12%) modules having a substantially high degradation. The remaining modules within the array continued to show reasonable performance (>96% of the rated power after ~ 4years).

Carbon Nanotube Thin Film Transistors for Flat Panel Display Application.

PubMed

Liang, Xuelei; Xia, Jiye; Dong, Guodong; Tian, Boyuan; Peng, Lianmao

2016-12-01

Carbon nanotubes (CNTs) are promising materials for both high performance transistors for high speed computing and thin film transistors for macroelectronics, which can provide more functions at low cost. Among macroelectronics applications, carbon nanotube thin film transistors (CNT-TFT) are expected to be used soon for backplanes in flat panel displays (FPDs) due to their superior performance. In this paper, we review the challenges of CNT-TFT technology for FPD applications. The device performance of state-of-the-art CNT-TFTs are compared with the requirements of TFTs for FPDs. Compatibility of the fabrication processes of CNT-TFTs and current TFT technologies are critically examined. Though CNT-TFT technology is not yet ready for backplane production line of FPDs, the challenges can be overcome by close collaboration between research institutes and FPD manufacturers in the short term.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crowder, M.A.; Sposili, R.S.; Cho, H.S.

Nonhydrogenated, n-channel, low-temperature-processed, single-crystal Si thin-film transistors (TFT`s) have been fabricated on Si thin films prepared via sequential lateral solidification (SLS). The device characteristics of the resulting SLS TFT`s exhibit properties and a level of performance that are superior to polycrystalline Si-based TFT`s and are comparable to similar devices fabricated on silicon-on-insulator (SOI) substrates or bulk-Si wafers. The authors attribute these high-performance device characteristics to the absence of high-angle grain-boundaries within the active channel portion of the TFT`s.

Micro-patterned ZnO semiconductors for high performance thin film transistors via chemical imprinting with a PDMS stamp.

PubMed

Seong, Kieun; Kim, Kyongjun; Park, Si Yun; Kim, Youn Sang

2013-04-07

Chemical imprinting was conducted on ZnO semiconductor films via a chemical reaction at the contact regions between a micro-patterned PDMS stamp and ZnO films. In addition, we applied the chemical imprinting on Li doped ZnO thin films for high performance TFTs fabrication. The representative micro-patterned Li doped ZnO TFTs showed a field effect mobility of 4.2 cm(2) V(-1) s(-1) after sintering at 300 °C.

Rare-metal-free high-performance Ga-Sn-O thin film transistor

NASA Astrophysics Data System (ADS)

Matsuda, Tokiyoshi; Umeda, Kenta; Kato, Yuta; Nishimoto, Daiki; Furuta, Mamoru; Kimura, Mutsumi

2017-03-01

Oxide semiconductors have been investigated as channel layers for thin film transistors (TFTs) which enable next-generation devices such as high-resolution liquid crystal displays (LCDs), organic light emitting diode (OLED) displays, flexible electronics, and innovative devices. Here, high-performance and stable Ga-Sn-O (GTO) TFTs were demonstrated for the first time without the use of rare metals such as In. The GTO thin films were deposited using radiofrequency (RF) magnetron sputtering. A high field effect mobility of 25.6 cm2/Vs was achieved, because the orbital structure of Sn was similar to that of In. The stability of the GTO TFTs was examined under bias, temperature, and light illumination conditions. The electrical behaviour of the GTO TFTs was more stable than that of In-Ga-Zn-O (IGZO) TFTs, which was attributed to the elimination of weak Zn-O bonds.

Rare-metal-free high-performance Ga-Sn-O thin film transistor

PubMed Central

Matsuda, Tokiyoshi; Umeda, Kenta; Kato, Yuta; Nishimoto, Daiki; Furuta, Mamoru; Kimura, Mutsumi

2017-01-01

Oxide semiconductors have been investigated as channel layers for thin film transistors (TFTs) which enable next-generation devices such as high-resolution liquid crystal displays (LCDs), organic light emitting diode (OLED) displays, flexible electronics, and innovative devices. Here, high-performance and stable Ga-Sn-O (GTO) TFTs were demonstrated for the first time without the use of rare metals such as In. The GTO thin films were deposited using radiofrequency (RF) magnetron sputtering. A high field effect mobility of 25.6 cm2/Vs was achieved, because the orbital structure of Sn was similar to that of In. The stability of the GTO TFTs was examined under bias, temperature, and light illumination conditions. The electrical behaviour of the GTO TFTs was more stable than that of In-Ga-Zn-O (IGZO) TFTs, which was attributed to the elimination of weak Zn-O bonds. PMID:28290547

Rare-metal-free high-performance Ga-Sn-O thin film transistor.

PubMed

Matsuda, Tokiyoshi; Umeda, Kenta; Kato, Yuta; Nishimoto, Daiki; Furuta, Mamoru; Kimura, Mutsumi

2017-03-14

Oxide semiconductors have been investigated as channel layers for thin film transistors (TFTs) which enable next-generation devices such as high-resolution liquid crystal displays (LCDs), organic light emitting diode (OLED) displays, flexible electronics, and innovative devices. Here, high-performance and stable Ga-Sn-O (GTO) TFTs were demonstrated for the first time without the use of rare metals such as In. The GTO thin films were deposited using radiofrequency (RF) magnetron sputtering. A high field effect mobility of 25.6 cm 2 /Vs was achieved, because the orbital structure of Sn was similar to that of In. The stability of the GTO TFTs was examined under bias, temperature, and light illumination conditions. The electrical behaviour of the GTO TFTs was more stable than that of In-Ga-Zn-O (IGZO) TFTs, which was attributed to the elimination of weak Zn-O bonds.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at

In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

Influence of substrate temperatures on the properties of GdF(3) thin films with quarter-wave thickness in the ultraviolet region.

PubMed

Jin, Jingcheng; Jin, Chunshui; Li, Chun; Deng, Wenyuan; Yao, Shun

2015-06-01

High-quality coatings of fluoride materials are in extraordinary demand for use in deep ultraviolet (DUV) lithography. Gadolinium fluoride (GdF₃) thin films were prepared by a thermal boat evaporation process at different substrate temperatures. GdF₃ thin film was set at quarter-wave thickness (∼27  nm) with regard to their common use in DUV/vacuum ultraviolet optical stacks; these thin films may significantly differ in nanostructural properties at corresponding depositing temperatures, which would crucially influence the performance of the multilayers. The measurement and analysis of optical, structural, and mechanical properties of GdF₃ thin films have been performed in a comprehensive characterization cycle. It was found that depositing GdF₃ thin films at relative higher temperature would form a rather dense, smooth, homogeneous structure within this film thickness scale.

Effects of high temperature and film thicknesses on the texture evolution in Ag thin films

NASA Astrophysics Data System (ADS)

Eshaghi, F.; Zolanvari, A.

2017-04-01

In situ high-temperature X-ray diffraction techniques were used to study the effect of high temperatures (up to 600°C) on the texture evolution in silver thin films. Ag thin films with different thicknesses of 40, 80, 120 and 160nm were sputtered on the Si(100) substrates at room temperature. Then, microstructure of thin films was determined using X-ray diffraction. To investigate the influence of temperature on the texture development in the Ag thin films with different thicknesses, (111), (200) and (220) pole figures were evaluated and orientation distribution functions were calculated. Minimizing the total energy of the system which is affected by competition between surface and elastic strain energy was a key factor in the as-deposited and post annealed thin films. Since sputtering depositions was performed at room temperature and at the same thermodynamic conditions, the competition growth caused the formation of the {122} < uvw \\rangle weak fiber texture in as-deposited Ag thin films. It was significantly observed that the post annealed Ag thin films showed {111} < uvw \\rangle orientations as their preferred orientations, but their preferred fiber texture varied with the thickness of thin films. Increasing thin film thickness from 40nm to 160nm led to decreasing the intensity of the {111} < uvw \\rangle fiber texture.

Thin client performance for remote 3-D image display.

PubMed

Lai, Albert; Nieh, Jason; Laine, Andrew; Starren, Justin

2003-01-01

Several trends in biomedical computing are converging in a way that will require new approaches to telehealth image display. Image viewing is becoming an "anytime, anywhere" activity. In addition, organizations are beginning to recognize that healthcare providers are highly mobile and optimal care requires providing information wherever the provider and patient are. Thin-client computing is one way to support image viewing this complex environment. However little is known about the behavior of thin client systems in supporting image transfer in modern heterogeneous networks. Our results show that using thin-clients can deliver acceptable performance over conditions commonly seen in wireless networks if newer protocols optimized for these conditions are used.

Thin-film-based scintillators for hard x-ray microimaging detectors: the ScinTAX Project

NASA Astrophysics Data System (ADS)

Rack, A.; Cecilia, A.; Douissard, P.-A.; Dupré, K.; Wesemann, V.; Baumbach, T.; Couchaud, M.; Rochet, X.; Riesemeier, H.; Radtke, M.; Martin, T.

2014-09-01

The project ScinTAX developed novel thin scintillating films for the application in high performance X-ray imaging and subsequent introduced new X-ray detectors to the market. To achieve this aim lutetium orthosilicate (LSO) scintillators doped with different activators were grown successfully by liquid phase epitaxy. The high density of LSO (7.4 g/cm3), the effective atomic number (65.2) and the high light yield make this scintillator highly applicable for indirect X-ray detection in which the ionizing radiation is converted into visible light and then registered by a digital detector. A modular indirect detection system has been developed to fully exploit the potential of this thin film scintillator for radiographic and tomographic imaging. The system is compatible for high-resolution imaging with moderate dose as well as adaptable to intense high-dose applications where radiation hard microimaging detectors are required. This proceedings article shall review the achieved performances and technical details on this high-resolution detector system which is now available. A selected example application demonstrates the great potential of the optimized detector system for hard X-ray microimaging, i.e. either to improve image contrast due to the availability of efficient thin crystal films or to reduce the dose to the sample.

Understanding Light Harvesting in Radial Junction Amorphous Silicon Thin Film Solar Cells

PubMed Central

Yu, Linwei; Misra, Soumyadeep; Wang, Junzhuan; Qian, Shengyi; Foldyna, Martin; Xu, Jun; Shi, Yi; Johnson, Erik; Cabarrocas, Pere Roca i

2014-01-01

The radial junction (RJ) architecture has proven beneficial for the design of a new generation of high performance thin film photovoltaics. We herein carry out a comprehensive modeling of the light in-coupling, propagation and absorption profile within RJ thin film cells based on an accurate set of material properties extracted from spectroscopic ellipsometry measurements. This has enabled us to understand and evaluate the impact of varying several key parameters on the light harvesting in radially formed thin film solar cells. We found that the resonance mode absorption and antenna-like light in-coupling behavior in the RJ cell cavity can lead to a unique absorption distribution in the absorber that is very different from the situation expected in a planar thin film cell, and that has to be taken into account in the design of high performance RJ thin film solar cells. When compared to the experimental EQE response of real RJ solar cells, this modeling also provides an insightful and powerful tool to resolve the wavelength-dependent contributions arising from individual RJ units and/or from strong light trapping due to the presence of the RJ cell array. PMID:24619197

Thin film surface modifications of thin/tunable liquid/gas diffusion layers for high-efficiency proton exchange membrane electrolyzer cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, Zhenye; Mo, Jingke; Yang, Gaoqiang

We present that a proton exchange membrane electrolyzer cell (PEMEC) is one of the most promising devices for high-efficiency and low-cost energy storage and ultrahigh purity hydrogen production. As one of the critical components in PEMECs, the titanium thin/tunable LGDL (TT-LGDL) with its advantages of small thickness, planar surface, straight-through pores, and well-controlled pore morphologies, achieved superior multifunctional performance for hydrogen and oxygen production from water splitting even at low temperature. Different thin film surface treatments on the novel TT-LGDLs for enhancing the interfacial contacts and PEMEC performance were investigated both in-situ and ex-situ for the first time. Surface modifiedmore » TT-LGDLs with about 180 nm thick Au thin film yielded performance improvement (voltage reduction), from 1.6849 V with untreated TT-LGDLs to only 1.6328 V with treated TT-LGDLs at 2.0 A/cm 2 and 80°C. Furthermore, the hydrogen/oxygen production rate was increased by about 28.2% at 1.60 V and 80°C. The durability test demonstrated that the surface treated TT-LGDL has good stability as well. Finally, the gold electroplating surface treatment is a promising method for the PEMEC performance enhancement and titanium material protection even in harsh environment.« less

Thin film surface modifications of thin/tunable liquid/gas diffusion layers for high-efficiency proton exchange membrane electrolyzer cells

DOE PAGES

Kang, Zhenye; Mo, Jingke; Yang, Gaoqiang; ...

2017-09-14

We present that a proton exchange membrane electrolyzer cell (PEMEC) is one of the most promising devices for high-efficiency and low-cost energy storage and ultrahigh purity hydrogen production. As one of the critical components in PEMECs, the titanium thin/tunable LGDL (TT-LGDL) with its advantages of small thickness, planar surface, straight-through pores, and well-controlled pore morphologies, achieved superior multifunctional performance for hydrogen and oxygen production from water splitting even at low temperature. Different thin film surface treatments on the novel TT-LGDLs for enhancing the interfacial contacts and PEMEC performance were investigated both in-situ and ex-situ for the first time. Surface modifiedmore » TT-LGDLs with about 180 nm thick Au thin film yielded performance improvement (voltage reduction), from 1.6849 V with untreated TT-LGDLs to only 1.6328 V with treated TT-LGDLs at 2.0 A/cm 2 and 80°C. Furthermore, the hydrogen/oxygen production rate was increased by about 28.2% at 1.60 V and 80°C. The durability test demonstrated that the surface treated TT-LGDL has good stability as well. Finally, the gold electroplating surface treatment is a promising method for the PEMEC performance enhancement and titanium material protection even in harsh environment.« less

Structural, Morphological, and Electron Transport Studies of Annealing Dependent In2O3 Dye-Sensitized Solar Cell

PubMed Central

Mahalingam, S.; Abdullah, H.; Shaari, S.; Muchtar, A.; Asshari, I.

2015-01-01

Indium oxide (In2O3) thin films annealed at various annealing temperatures were prepared by using spin-coating method for dye-sensitized solar cells (DSSCs). The objective of this research is to enhance the photovoltaic conversion efficiency in In2O3 thin films by finding the optimum annealing temperature and also to study the reason for high and low performance in the annealed In2O3 thin films. The structural and morphological characteristics of In2O3 thin films were studied via XRD patterns, atomic force microscopy (AFM), field-emission scanning electron microscopy (FESEM), EDX sampling, and transmission electron microscopy (TEM). The annealing treatment modified the nanostructures of the In2O3 thin films viewed through FESEM images. The In2O3-450°C-based DSSC exhibited better photovoltaic performance than the other annealed thin films of 1.54%. The electron properties were studied by electrochemical impedance spectroscopy (EIS) unit. The In2O3-450°C thin films provide larger diffusion rate, low recombination effect, and longer electron lifetime, thus enhancing the performance of DSSC. PMID:26146652

Performance enhanced miniaturized and electrically tunable patch antenna with patterned permalloy based magneto-dielectric substrate

NASA Astrophysics Data System (ADS)

Peng, Yujia; Farid Rahman, B. M.; Wang, Xuehe; Wang, Guoan

2014-05-01

Perspective magneto-dielectric materials with high permeability are potential substrates to miniaturize the patch antenna without deteriorating its performance. Besides its high permeability at high frequency, patterned Permalloy (Py) also presents tunable permeability by applying DC current. A performance enhanced miniaturized and electrically tunable patch antenna with patterned Py thin film is first presented and developed in this paper. To suppress the magnetic loss, the Py thin film layer is consisted of an array of 2 μm × 2 μm square Py patterns between the copper patch antenna and dielectric substrate. The DC current could be applied directly on Py patterns through the copper strip lines beneath the Py patterns along the length of patch antenna. The copper strip lines are specially designed with the same width of Py patterns and the thickness much less than the skin depth at the operating frequency, which can reduce their deteriorating effects to the performance of antenna. The structure of the antenna is presented and simulated with high frequency structure simulator. The results show that compared with non-magnetic antenna, the performance of Py thin film based antenna is improved with 50% bandwidth increase from 4 MHz to 8 MHz and 1.2 dB gain enhancement from 1.16 dB to 2.36 dB. The resonant frequency of the antenna could be continuously tuned from 937 MHz to 911 MHz with the permeability of Py thin film changing from 1750 to 1 900 by applying the DC current.

Atmospheric Pressure Plasma Jet-Assisted Synthesis of Zeolite-Based Low-k Thin Films.

PubMed

Huang, Kai-Yu; Chi, Heng-Yu; Kao, Peng-Kai; Huang, Fei-Hung; Jian, Qi-Ming; Cheng, I-Chun; Lee, Wen-Ya; Hsu, Cheng-Che; Kang, Dun-Yen

2018-01-10

Zeolites are ideal low-dielectric constant (low-k) materials. This paper reports on a novel plasma-assisted approach to the synthesis of low-k thin films comprising pure-silica zeolite MFI. The proposed method involves treating the aged solution using an atmospheric pressure plasma jet (APPJ). The high reactivity of the resulting nitrogen plasma helps to produce zeolite crystals with high crystallinity and uniform crystal size distribution. The APPJ treatment also remarkably reduces the time for hydrothermal reaction. The zeolite MFI suspensions synthesized with the APPJ treatment are used for the wet deposition to form thin films. The deposited zeolite thin films possessed dense morphology and high crystallinity, which overcome the trade-off between crystallinity and film quality. Zeolite thin films synthesized using the proposed APPJ treatment achieve low leakage current (on the order of 10 -8 A/cm 2 ) and high Young's modulus (12 GPa), outperforming the control sample synthesized without plasma treatment. The dielectric constant of our zeolite thin films was as low as 1.41. The overall performance of the low-k thin films synthesized with the APPJ treatment far exceed existing low-k films comprising pure-silica MFI.

Facile synthesis of hierarchical mesoporous weirds-like morphological MnO2 thin films on carbon cloth for high performance supercapacitor application.

PubMed

Shinde, Pragati A; Lokhande, Vaibhav C; Ji, Taeksoo; Lokhande, Chandrakant D

2017-07-15

The mesoporous nanostructured metal oxides have a lot of capabilities to upsurge the energy storing capacity of the supercapacitor. In present work, different nanostructured morphologies of MnO 2 have been successfully fabricated on flexible carbon cloth by simple but capable hydrothermal method at different deposition temperatures. The deposition temperature has strong influence on reaction kinetics, which subsequently alters the morphology and electrochemical performance. Among different nanostructured MnO 2 thin films, the mesoporous weirds composed thin film obtained at temperature of 453K exhibits excellent physical and electrochemical features for supercapacitor application. The weirds composed MnO 2 thin film exhibits specific surface area of 109m 2 g -1 , high specific capacitance of 595Fg -1 with areal capacitance of 4.16Fcm -2 at a scan rate of 5mVs -1 and high specific energy of 56.32Whkg -1 . In addition to this, MnO 2 weirds attain capacity retention of 87 % over 2000 CV cycles, representing better cycling stability. The enhanced electrochemical performance could be ascribed to direct growth of highly porous MnO 2 weirds on carbon cloth which provide more pathways for easy diffusion of electrolyte into the interior of electroactive material. The as-fabricated electrode with improved performance could be ascribed as a potential electrode material for energy storage devices. Copyright © 2017 Elsevier Inc. All rights reserved.

High mobility and high stability glassy metal-oxynitride materials and devices

NASA Astrophysics Data System (ADS)

Lee, Eunha; Kim, Taeho; Benayad, Anass; Hur, Jihyun; Park, Gyeong-Su; Jeon, Sanghun

2016-04-01

In thin film technology, future semiconductor and display products with high performance, high density, large area, and ultra high definition with three-dimensional functionalities require high performance thin film transistors (TFTs) with high stability. Zinc oxynitride, a composite of zinc oxide and zinc nitride, has been conceded as a strong substitute to conventional semiconductor film such as silicon and indium gallium zinc oxide due to high mobility value. However, zinc oxynitride has been suffered from poor reproducibility due to relatively low binding energy of nitrogen with zinc, resulting in the instability of composition and its device performance. Here we performed post argon plasma process on zinc oxynitride film, forming nano-crystalline structure in stable amorphous matrix which hampers the reaction of oxygen with zinc. Therefore, material properties and device performance of zinc oxynitride are greatly enhanced, exhibiting robust compositional stability even exposure to air, uniform phase, high electron mobility, negligible fast transient charging and low noise characteristics. Furthermore, We expect high mobility and high stability zinc oxynitride customized by plasma process to be applicable to a broad range of semiconductor and display devices.

High performance VO2 thin films fabricated by room-temperature reactive magnetron sputtering and rapid thermal annealing

NASA Astrophysics Data System (ADS)

Zhan, Yongjun; Xiao, Xiudi; Lu, Yuan; Cao, Ziyi; Cheng, Haoliang; Shi, Jifu; Xu, Gang

2017-10-01

The VOx thin films are successfully prepared on glass substrate by reactive magnetron sputtering at room-temperature, and subsequently annealed by rapid thermal annealing system in N2 from 0.5Pa to 10000Pa. The effects of annealing pressure on the optical performance and phase transition temperature (Tc) of VOx thin films are systematically investigated. The results show that the VOx thin films exhibit good performance with Tlum of 28.17%, ΔTsol of 12.69%, and Tc of 42. The annealing pressure had an obvious influence on the grain size, which can be attributed to light scattering effects by gas molecule. Compared with oxygen vacancy defects, the grain size plays a decisive role in the regulation of Tc. The restricting the growth of grain can be reduced the Tc, and a little deterioration effect on optical performance can be observed. In addition, the method in this paper not only depressed the Tc, but also simplified the process and improved efficiency, which will provide guidance for the preparation and application of VOx thin films.

Statewide implementation of very thin overlays.

DOT National Transportation Integrated Search

2014-10-01

Very thin overlays are defined as overlays where the final lift thickness is 1 inch or less. These are designed : to be high performance overlays in that they have to pass both a rutting (Hamburg Wheel tracking Test) and : reflection cracking (Overla...

Thin overlay guidelines : project selection, design, and construction.

DOT National Transportation Integrated Search

2015-04-01

Thin hot mix asphalt (HMA) overlays are : cost-effective, high-performance maintenance : treatments. They can be laid at 1.0 to 0.5 inches : thick and consist of quality aggregate and binder : materials. The costs are generally more (per ton) : than ...

Improvement Noise Insulation Performance of Polycarbonate Pane using Sandwich Structure

NASA Astrophysics Data System (ADS)

Shen, Min; Nagamura, Kazuteru; Nakagawa, Noritoshi; Okamura, Masaharu

Polycarbonate (PC) laminates offer the possibility of designing strong and light weight panes application in automobile. However, the noise insulation performance of PC pane is worse than glass pane because of its high rate of stiffness to low weight. In this work, a new ultra-thin(less than 10mm) sandwich pane is proposed to obtain high transmission loss(TL). The sandwich structure consists of two thin laminates plates of the same PC material and a thin lightweight damping core bonded between those plates. Then TL is predicted using decoupled equations representing symmetric and anti-symmetric motions for a sandwich PC pane. The effects of various structural and material parameters on noise insulation performance are investigated with numerical examples. Numerical results show that the shear rigidity has evident effect on coincidence frequency and proposed structure has better noise insulation properties than single layer PC pane of equivalent thickness.

Coupled optical and electrical study of thin-film InGaAs photodetector integrated with surface InP Mie resonators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fu, Dong; Song, Jiakun; Yu, Hailong

2016-03-14

High-index dielectric and semiconductor nanostructures with characteristics of low absorption loss and artificially controlled scattering properties have grasped an increasing attention for improving the performance of thin-film photovoltaic devices. In this work, combined optical and electrical simulations were performed for thin-film InP/In{sub 0.53}Ga{sub 0.47}As/InP hetero-junction photodetector with periodically arranged InP nano-cylinders in the in-coupling configuration. It is found that the carefully designed InP nano-cylinders possess strongly substrate-coupled Mie resonances and can effectively couple incident light into the guided mode, both of which significantly increase optical absorption. Further study from the electrical aspects shows that enhancement of external quantum efficiency ismore » as high as 82% and 83% in the configurations with the optimized nano-cylinders and the optimized period, respectively. Moreover, we demonstrate that the integration of InP nano-cylinders does not degrade the electrical performance, since the surface recombination is effectively suppressed by separating the absorber layer where carriers generate and the air/semiconductor interface. The comprehensive modeling including optical and electrical perspectives provides a more practical description for device performance than the optical-only simulation and is expected to advance the design of thin-film absorber layer based optoelectronic devices for fast response and high efficiency.« less

High Performance 50 nm InAlAs/In0.75GaAs Metamorphic High Electron Mobility Transistors with Si3N4 Passivation on Thin InGaAs Layer

NASA Astrophysics Data System (ADS)

Yeon, Seongjin; Seo, Kwangseok

2008-04-01

We fabricated 50 nm InAlAs/InGaAs metamorphic high electron mobility transistors (HEMTs) with a very thin barrier. Through the reduction of the gate-channel distance (dGC) in the epitaxial structure, a channel aspect ratio (ARC) of over three was achieved when Lg was 50 nm. We inserted a thin InGaAs layer as a protective layer, and tested various gate structures to reduce surface problems induced by barrier shrinkage and to optimize the device characteristics. Through the optimization of the gate structure with the thin InGaAs layer, the fabricated 50 nm metamorphic HEMT exhibited high DC and RF characteristics, Gm of 1.5 S/mm, and fT of 490 GHz.

Nanostructured vanadium oxide thin film with high TCR at room temperature for microbolometer

NASA Astrophysics Data System (ADS)

Wang, Bin; Lai, Jianjun; Li, Hui; Hu, Haoming; Chen, Sihai

2013-03-01

In order to obtain high quality of thermal sensitive material, VOx thin film of high temperature coefficient of resistance (TCR) of 6.5%/K at room temperature has been deposited by reactive ion beam sputtering and post annealing method. AFM and XRD measurements indicate that the VOx thin film with nanostructured crystalline is composed of VO2 and V2O3. The nanostructured VOx microbolometer has been designed and fabricated. The measurement of the film system with TiN absorbing layer indicates that it has about 92% infrared absorption in the range of 8-14 μm. The performance of this bolometer, comparing with that of bolometer with common VOx, has a better result. At 20 Hz frequency and 10 μA bias current, the bolometer with high TCR has reached detectivity of 1.0 × 109 cm Hz1/2/W. It also indicates that this nanostructured VOx thin film has not only a higher TCR but also a lower noise than common VOx thin film without annealing.

Enhancement of Gas Barrier Properties of CFRP Laminates Fabricated Using Thin-Ply Prepregs

NASA Astrophysics Data System (ADS)

横関, 智弘; 高木, 智宏; 吉村, 彰記; Ogasawara, Toshio; 荻原, 慎二

Composite laminates manufactured using thin-ply prepregs are expected to have superior resistance properties against microcracking compared to those using standard prepregs. In this study, comparative investigations are presented on the microcrack accumulation and gas leakage characteristics of CFRP laminates fabricated using standard and thin-ply prepregs, consisting of high-performance carbon fiber and toughened epoxy, as a fundamental research on the cryogenic composite tanks for future space vehicles. It was shown that laminates using thin-ply prepregs exhibited much higher strain at microcrack initiation compared to those using standard prepregs at room and cryogenic temperatures. In addition, helium gas leak tests using CFRP laminated tubular specimens subjected to quasi-static tension loadings were performed. It was demonstrated that CFRP laminates using thin-ply prepregs have higher gas barrier properties than those using standard prepregs.

The Processing and Mechanical Properties of High Temperature/High Performance Composites. Book 1, Section 1: Coatings and Interfaces

DTIC Science & Technology

1989-10-15

Cut Prestressed Film H.M. Jensen on a Substrate J.W. Hutchinson K.S. Kim 8. Measuring the Strength and Stiffness T.P. Weihs of Thin Film Materials by...for Thin Films T.P. Weihs Using Micro-Cantilever Beams J.C. Bravman W.D. Nix 10. Analysis of Elastic and Plastic Deformation A.K. Bhattacharya...Associated with Indentation Testing of Thin W.D. Nix Films on Substrates 11. Finite Elenent Simulidion of Indentation A.K. 13hattacharya Experimnents W.D

Fabrication of InGaN thin-film transistors using pulsed sputtering deposition.

PubMed

Itoh, Takeki; Kobayashi, Atsushi; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi

2016-07-07

We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In content. The optimized InGaN-TFTs exhibited a high on/off ratio of ~10(8), a field-effect mobility of ~22 cm(2) V(-1) s(-1), and a maximum current density of ~30 mA/mm. These results lay the foundation for developing high-performance electronic devices on glass substrates using group III nitride semiconductors.

TiN-buffered substrates for photoelectrochemical measurements of oxynitride thin films

NASA Astrophysics Data System (ADS)

Pichler, Markus; Pergolesi, Daniele; Landsmann, Steve; Chawla, Vipin; Michler, Johann; Döbeli, Max; Wokaun, Alexander; Lippert, Thomas

2016-04-01

Developing novel materials for the conversion of solar to chemical energy is becoming an increasingly important endeavour. Perovskite compounds based on bandgap tunable oxynitrides represent an exciting class of novel photoactive materials. To date, literature mostly focuses on the characterization of oxynitride powder samples which have undeniable technological interest but do not allow the investigation of fundamental properties such as the role of the crystalline quality and/or the surface crystallographic orientation toward photo-catalytic activity. The challenge of growing high quality oxynitride thin films arises from the availability of a suitable substrate, owing to strict material and processing requirements: effective lattice matching, sufficiently high conductivities, stability under high temperatures and in strongly reducing environments. Here, we have established the foundations of a model system incorporating a TiN-buffer layer which enables fundamental investigations into crystallographic surface orientation and crystalline quality of the photocatalyst against photo(electro)chemical performance to be effectively performed. Furthermore, we find that TiN as current collector enables control over the nitrogen content of oxynitride thin films produced by a modified pulsed laser deposition method and allows the growth of highly ordered LaTiO3-xNx thin films.

High performance novel gadolinium doped ceria/yttria stabilized zirconia/nickel layered and hybrid thin film anodes for application in solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Garcia-Garcia, F. J.; Beltrán, A. M.; Yubero, F.; González-Elipe, A. R.; Lambert, R. M.

2017-09-01

Magnetron sputtering under oblique angle deposition was used to produce Ni-containing ultra thin film anodes comprising alternating layers of gadolinium doped ceria (GDC) and yttria stabilized zirconia (YSZ) of either 200 nm or 1000 nm thickness. The evolution of film structure from initial deposition, through calcination and final reduction was examined by XRD, SEM, TEM and TOF-SIMS. After subsequent fuel cell usage, the porous columnar architecture of the two-component layered thin film anodes was maintained and their resistance to delamination from the underlying YSZ electrolyte was superior to that of corresponding single component Ni-YSZ and Ni-GDC thin films. Moreover, the fuel cell performance of the 200 nm layered anodes compared favorably with conventional commercially available thick anodes. The observed dependence of fuel cell performance on individual layer thicknesses prompted study of equivalent but more easily fabricated hybrid anodes consisting of simultaneously deposited Ni-GDC and Ni-YSZ, which procedure resulted in exceptionally intimate mixing and interaction of the components. The hybrids exhibited very unusual and favorable Isbnd V characteristics, along with exceptionally high power densities at high currents. Their discovery is the principal contribution of the present work.

High performance sandwich structured Si thin film anodes with LiPON coating

NASA Astrophysics Data System (ADS)

Luo, Xinyi; Lang, Jialiang; Lv, Shasha; Li, Zhengcao

2018-06-01

The sandwich structured silicon thin film anodes with lithium phosphorus oxynitride (LiPON) coating are synthesized via the radio frequency magnetron sputtering method, whereas the thicknesses of both layers are in the nanometer range, i.e. between 50 and 200 nm. In this sandwich structure, the separator simultaneously functions as a flexible substrate, while the LiPON layer is regarded as a protective layer. This sandwich structure combines the advantages of flexible substrate, which can help silicon release the compressive stress, and the LiPON coating, which can provide a stable artificial solid-electrolyte interphase (SEI) film on the electrode. As a result, the silicon anodes are protected well, and the cells exhibit high reversible capacity, excellent cycling stability and good rate capability. All the results demonstrate that this sandwich structure can be a promising option for high performance Si thin film lithium ion batteries.

High performance sandwich structured Si thin film anodes with LiPON coating

NASA Astrophysics Data System (ADS)

Luo, Xinyi; Lang, Jialiang; Lv, Shasha; Li, Zhengcao

2018-04-01

The sandwich structured silicon thin film anodes with lithium phosphorus oxynitride (LiPON) coating are synthesized via the radio frequency magnetron sputtering method, whereas the thicknesses of both layers are in the nanometer range, i.e. between 50 and 200 nm. In this sandwich structure, the separator simultaneously functions as a flexible substrate, while the LiPON layer is regarded as a protective layer. This sandwich structure combines the advantages of flexible substrate, which can help silicon release the compressive stress, and the LiPON coating, which can provide a stable artificial solidelectrolyte interphase (SEI) film on the electrode. As a result, the silicon anodes are protected well, and the cells exhibit high reversible capacity, excellent cycling stability and good rate capability. All the results demonstrate that this sandwich structure can be a promising option for high performance Si thin film lithium ion batteries.

Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO 3)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Jie; Morrow, Darien J.; Fu, Yongping

High-quality metal halide perovskite single crystals have low defect densities and excellent photophysical properties, yet thin films are the most sought after material geometry for optoelectronic devices. Perovskite single-crystal thin films (SCTFs) would be highly desirable for high-performance devices, but their growth remains challenging, particularly for inorganic metal halide perovskites. Herein, we report the facile vapor-phase epitaxial growth of cesium lead bromide perovskite (CsPbBr 3) continuous SCTFs with controllable micrometer thickness, as well as nanoplate arrays, on traditional oxide perovskite SrTiO 3(100) substrates. Heteroepitaxial single-crystal growth is enabled by the serendipitous incommensurate lattice match between these two perovskites, and overcomingmore » the limitation of island-forming Volmer–Weber crystal growth is critical for growing large-area continuous thin films. Time-resolved photoluminescence, transient reflection spectroscopy, and electrical transport measurements show that the CsPbBr 3 epitaxial thin film has a slow charge carrier recombination rate, low surface recombination velocity (10 4 cm s –1), and low defect density of 10 12 cm –3, which are comparable to those of CsPbBr 3 single crystals. This work suggests a general approach using oxide perovskites as substrates for heteroepitaxial growth of halide perovskites. Furthermore, the high-quality halide perovskite SCTFs epitaxially integrated with multifunctional oxide perovskites could open up opportunities for a variety of high-performance optoelectronics devices.« less

Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO 3)

DOE PAGES

Chen, Jie; Morrow, Darien J.; Fu, Yongping; ...

2017-09-05

High-quality metal halide perovskite single crystals have low defect densities and excellent photophysical properties, yet thin films are the most sought after material geometry for optoelectronic devices. Perovskite single-crystal thin films (SCTFs) would be highly desirable for high-performance devices, but their growth remains challenging, particularly for inorganic metal halide perovskites. Herein, we report the facile vapor-phase epitaxial growth of cesium lead bromide perovskite (CsPbBr 3) continuous SCTFs with controllable micrometer thickness, as well as nanoplate arrays, on traditional oxide perovskite SrTiO 3(100) substrates. Heteroepitaxial single-crystal growth is enabled by the serendipitous incommensurate lattice match between these two perovskites, and overcomingmore » the limitation of island-forming Volmer–Weber crystal growth is critical for growing large-area continuous thin films. Time-resolved photoluminescence, transient reflection spectroscopy, and electrical transport measurements show that the CsPbBr 3 epitaxial thin film has a slow charge carrier recombination rate, low surface recombination velocity (10 4 cm s –1), and low defect density of 10 12 cm –3, which are comparable to those of CsPbBr 3 single crystals. This work suggests a general approach using oxide perovskites as substrates for heteroepitaxial growth of halide perovskites. Furthermore, the high-quality halide perovskite SCTFs epitaxially integrated with multifunctional oxide perovskites could open up opportunities for a variety of high-performance optoelectronics devices.« less

Novel organic semiconductors and a high capacitance gate dielectric for organic thin film transistors

NASA Astrophysics Data System (ADS)

Cai, Xiuyu

2007-12-01

Organic semiconductors are attracting more and more interest as a promising set of materials in the field of electronics research. This thesis focused on several new organic semiconductors and a novel high-kappa dielectric thin film (SrTiO3), which are two essential parts in Organic Thin Film Transistors (OTFTs). Structure and morphology of thin films of tricyanovinyl capped oligothiophenes were studied using atomic force microscopy and x-ray diffraction. Thin film transistors of one compound exhibited a reasonable electron mobility of 0.02 cm2/Vs. Temperature dependent measurements on the thin film transistor based on this compound revealed shallow trap states that were interpreted in terms of a multiple trap and release model. Moreover, inversion of the majority charge carrier type from electrons to holes was observed when the number of oligothiophene rings increased to six and ambipolar transport behavior was observed for tricyanovinyl sexithiophene. Another interesting organic semiconductor compound is the fluoalkylquarterthiophene, which showed ambipolar transport and large hysteresis in the transfer curve. Due to the bistable state at floating gate, the thin film transistor was exploited to study non-volatile floating gate memory effects. The temperature dependence of the retention time for this memory device revealed that the electron trapping was an activated process. Following the earlier work on hybrid acene-thiophene organic semiconductors, new compounds with similar structure were studied to reveal the mechanism of the air-stability exhibited by some compounds. They all formed highly crystalline thin films and showed reasonable device performances which are well correlated with the molecular structures, thin film microstructures, and solid state packing. The most air-stable compound had no observable degradation with exposure to air for 15 months. SrTiO3 was developed to be employed in OTFTs. Optimization of thin film growth was performed using reactive sputtering growth. Excellent SrTiO3 epitaixal thin film growth was revealed on conductive SrTiO 3:Nb substrates. A maximum charge carrier density of 1014 cm-2 was obtained based on pentacene and perylene diimide thin film transistors. Some new physical phenomena, such as step-like transfer characteristic curve and negative transconductance, were observed at such high field effect induced charge carrier density.

Structure and Ferroelectric Properties of High Tc BiScO3-PbTiO3 Epitaxial Thin Films.

PubMed

Wasa, Kiyotaka; Yoshida, Shinya; Hanzawa, Hiroaki; Adachi, Hideaki; Matsunaga, Toshiyuki; Tanaka, Shuji

2016-10-01

Piezoelectric ceramics of new composition with higher Curie temperature T c are extensively studied for better piezoelectric microelectromechanical systems (MEMS). Apart from the compositional research, enhanced T c could be achieved in a modified structure. We have considered that a designed laminated structure of Pb(Zr, Ti)O 3 (PZT)-based thin film, i.e., relaxed heteroepitaxial epitaxial thin film, is one of the promising modified structures to enhance T c . This structure exhibits an extraordinarily high T c , i.e., [Formula: see text] (bulk [Formula: see text]). In this paper, we have fabricated the designed laminated structure of high T c (1-x)BiScO 3 -xPbTiO 3 . T c of BS-0.8PT thin films was found to be extraordinarily high, i.e., [Formula: see text] (bulk T c , [Formula: see text]). Their ferroelectric performances were comparable to those of PZT-based thin films. The present BS-xPT thin films have a high potential for fabrication of high-temperature-stable piezoelectric MEMS. The mechanism of the enhanced T c is probably the presence of the mechanically stable interface to temperature in the laminated structure. We believe this designed laminated structure can extract fruitful properties of bulk ferroelectric ceramics.

Radiation hardness of thin Low Gain Avalanche Detectors

NASA Astrophysics Data System (ADS)

Kramberger, G.; Carulla, M.; Cavallaro, E.; Cindro, V.; Flores, D.; Galloway, Z.; Grinstein, S.; Hidalgo, S.; Fadeyev, V.; Lange, J.; Mandić, I.; Medin, G.; Merlos, A.; McKinney-Martinez, F.; Mikuž, M.; Quirion, D.; Pellegrini, G.; Petek, M.; Sadrozinski, H. F.-W.; Seiden, A.; Zavrtanik, M.

2018-05-01

Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 μm). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5 ṡ 1015 cm-2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (∼300 μm) and offer larger charge collection with respect to detectors without gain layer for fluences < 2 ṡ 1015 cm-2. Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors.

Nanomechanical Behavior of High Gas Barrier Multilayer Thin Films.

PubMed

Humood, Mohammad; Chowdhury, Shahla; Song, Yixuan; Tzeng, Ping; Grunlan, Jaime C; Polycarpou, Andreas A

2016-05-04

Nanoindentation and nanoscratch experiments were performed on thin multilayer films manufactured using the layer-by-layer (LbL) assembly technique. These films are known to exhibit high gas barrier, but little is known about their durability, which is an important feature for various packaging applications (e.g., food and electronics). Films were prepared from bilayer and quadlayer sequences, with varying thickness and composition. In an effort to evaluate multilayer thin film surface and mechanical properties, and their resistance to failure and wear, a comprehensive range of experiments were conducted: low and high load indentation, low and high load scratch. Some of the thin films were found to have exceptional mechanical behavior and exhibit excellent scratch resistance. Specifically, nanobrick wall structures, comprising montmorillonite (MMT) clay and polyethylenimine (PEI) bilayers, are the most durable coatings. PEI/MMT films exhibit high hardness, large elastic modulus, high elastic recovery, low friction, low scratch depth, and a smooth surface. When combined with the low oxygen permeability and high optical transmission of these thin films, these excellent mechanical properties make them good candidates for hard coating surface-sensitive substrates, where polymers are required to sustain long-term surface aesthetics and quality.

Post-growth process for flexible CdS/CdTe thin film solar cells with high specific power.

PubMed

Cho, Eunwoo; Kang, Yoonmook; Kim, Donghwan; Kim, Jihyun

2016-05-16

We demonstrated a flexible CdS/CdTe thin film solar cell with high specific power of approximately 254 W/kg. A flexible and ultra-light weight CdS/CdTe cell treated with pre-NP etch process exhibited high conversion efficiency of 13.56% in superstrate configuration. Morphological, structural and optical changes of CdS/CdTe thin films were characterized when pre-NP etch step was incorporated to the conventional post-deposition process. Improvement of photovoltaic parameters can be attributed to the removal of the oxide and the formation of Te-rich layer, which benefit the activation process. Pre-NP etched cell maintained their flexibility and performance under the repeated tensile strain of 0.13%. Our method can pave a way for manufacturing flexible CdS/CdTe thin film solar cells with high specific power for mobile and aerospace applications.

High-Resolution Spin-on-Patterning of Perovskite Thin Films for a Multiplexed Image Sensor Array.

PubMed

Lee, Woongchan; Lee, Jongha; Yun, Huiwon; Kim, Joonsoo; Park, Jinhong; Choi, Changsoon; Kim, Dong Chan; Seo, Hyunseon; Lee, Hakyong; Yu, Ji Woong; Lee, Won Bo; Kim, Dae-Hyeong

2017-10-01

Inorganic-organic hybrid perovskite thin films have attracted significant attention as an alternative to silicon in photon-absorbing devices mainly because of their superb optoelectronic properties. However, high-definition patterning of perovskite thin films, which is important for fabrication of the image sensor array, is hardly accomplished owing to their extreme instability in general photolithographic solvents. Here, a novel patterning process for perovskite thin films is described: the high-resolution spin-on-patterning (SoP) process. This fast and facile process is compatible with a variety of spin-coated perovskite materials and perovskite deposition techniques. The SoP process is successfully applied to develop a high-performance, ultrathin, and deformable perovskite-on-silicon multiplexed image sensor array, paving the road toward next-generation image sensor arrays. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Wide Bandgap Semiconductor Nanowires for Electronic, Photonic and Sensing Devices

DTIC Science & Technology

2012-01-05

oxide -based thin film transistors ( TFTs ) have attracted much attention for applications like flexible electronic devices. The...crystals, and ~ 1.5 cm2.V-1.s-1 for pentacene thin films ). A number of groups have demonstrated TFTs based on α- oxide semiconductors such as zinc oxide ...show excellent long-term stability at room temperature. Results: High-performance amorphous (α-) InGaZnO-based thin film transistors ( TFTs )

Epitaxial growth of metallic buffer layer structure and c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 thin film on Si for high performance piezoelectric micromachined ultrasonic transducer

NASA Astrophysics Data System (ADS)

Thao, Pham Ngoc; Yoshida, Shinya; Tanaka, Shuji

2017-12-01

This paper reports on the development of a metallic buffer layer structure, (100) SrRuO3 (SRO)/(100) Pt/(100) Ir/(100) yttria-stabilized zirconia (YSZ) layers for the epitaxial growth of a c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 (PMnN-PZT) thin film on a (100) Si wafer for piezoelectric micro-electro mechanical systems (MEMS) application. The stacking layers were epitaxially grown on a Si substrate under the optimal deposition condition. A crack-free PMnN-PZT epitaxial thin films was obtained at a thickness up to at least 1.7 µm, which is enough for MEMS applications. The unimorph MEMS cantilevers based on the PMnN-PZT thin film were fabricated and characterized. As a result, the PMnN-PZT thin film exhibited -10 to -12 C/m2 as a piezoelectric coefficient e 31,f and ˜250 as a dielectric constants ɛr. The resultant FOM for piezoelectric micromachined ultrasonic transducer (pMUT) is higher than those of general PZT and AlN thin films. This structure has a potential to provide high-performance pMUTs.

Enhancing the color gamut of white displays using novel deep-blue organic fluorescent dyes to form color-changed thin films with improved efficiency

NASA Astrophysics Data System (ADS)

Liu, Wei-Ting; Huang, Wen-Yao

2012-10-01

This study used the novel fluorescence based deep-blue-emitting molecule BPVPDA in an organic fluorescent color thin film to exhibit deep blue color with CIE coordinates of (0.13, 0.16). The developed original organic RGB color thin film technology enables the optimization of the distinctive features of an organic light emitting diode (OLED) and thin-film-transistor (TFT) LCD display. The color filter structure maintains the same high resolution to obtain a higher level of brightness in comparison with conventional organic RGB color thin film. The image-processing engine is designed to achieve a sharp text image for a TFT LCD with organic color thin films. The organic color thin films structure uses an organic dye dopant in a limpid photoresist. With this technology, the following characteristics can be obtained: 1. high color reproduction of gamut ratio, and 2. improved luminous efficiency with organic color fluorescent thin film. This performance is among the best results ever reported for a color-filter used on TFT-LCD or OLED.

Enhancing the color gamut of white displays using novel deep-blue organic fluorescent dyes to form color-changed thin films with improved efficiency

NASA Astrophysics Data System (ADS)

Liu, Wei-ting; Huang, Wen-Yao

2012-06-01

This study used novel fluorescence based deep-blue-emitting molecules, namely BPVPDA, an organic fluorescence color thin film using BPVPDA exhibit deep blue fluorine with CIE coordinates of (0.13,0.16). The developed original Organic RGB color thin film technology enables the optimization of the distinctive features of an organic light emitting diode (OLED) and (TFT) LCD display. The color filter structure maintains the same high resolution to obtain a higher level of brightness, in comparison with conventional organic RGB color thin film. The image-processing engine is designed to achieve a sharp text image for a thin-film-transistor (TFT) LCD with organic color thin films. The organic color thin films structure uses organic dye dopent in limpid photo resist. With this technology , the following characteristics can be obtained: (1) high color reproduction of gamut ratio, and (2) improved luminous efficiency with organic color fluorescence thin film. This performance is among the best results ever reported for a color-filter used on TFT-LCD and OLED.

Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.

PubMed

Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

2016-07-20

There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

Highly Crystalline C8-BTBT Thin-Film Transistors by Lateral Homo-Epitaxial Growth on Printed Templates.

PubMed

Janneck, Robby; Pilet, Nicolas; Bommanaboyena, Satya Prakash; Watts, Benjamin; Heremans, Paul; Genoe, Jan; Rolin, Cedric

2017-11-01

Highly crystalline thin films of organic semiconductors offer great potential for fundamental material studies as well as for realizing high-performance, low-cost flexible electronics. The fabrication of these films directly on inert substrates is typically done by meniscus-guided coating techniques. The resulting layers show morphological defects that hinder charge transport and induce large device-to-device variability. Here, a double-step method for organic semiconductor layers combining a solution-processed templating layer and a lateral homo-epitaxial growth by a thermal evaporation step is reported. The epitaxial regrowth repairs most of the morphological defects inherent to meniscus-guided coatings. The resulting film is highly crystalline and features a mobility increased by a factor of three and a relative spread in device characteristics improved by almost half an order of magnitude. This method is easily adaptable to other coating techniques and offers a route toward the fabrication of high-performance, large-area electronics based on highly crystalline thin films of organic semiconductors. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synthesis and electrochemical property of LiCoO 2 thin films composed of nanosize compounds synthesized via nanosheet restacking method

NASA Astrophysics Data System (ADS)

Quan, Zhen; Iwase, Kosuke; Sonoyama, Noriyuki

LiCoO 2 thin films with nanosize particles were synthesized on Au substrates by nanosheet restacking method and subsequent hydrothermal reaction which needs less cost than the vacuum deposition methods. The grain size of LiCoO 2 films estimated by XRD reflection was about 15 nm that was independent of the thickness of precursor cobalt hydroxide film. Comparing the rate performance of the thin films with various thickness, the optimum performance was obtained by the thin film with 5 min deposition time: 62% of the capacity was held at 400 C-rate compared with that at 20 C-rate. The results of AC-impedance analysis of electrode reaction indicate that the high rate capability of the LiCoO 2 film is obtained by the small grain size and large surface area of LiCoO 2 thin film with nano size particles.

High performance perpendicular magnetic tunnel junction with Co/Ir interfacial anisotropy for embedded and standalone STT-MRAM applications

NASA Astrophysics Data System (ADS)

Huai, Yiming; Gan, Huadong; Wang, Zihui; Xu, Pengfa; Hao, Xiaojie; Yen, Bing K.; Malmhall, Roger; Pakala, Nirav; Wang, Cory; Zhang, Jing; Zhou, Yuchen; Jung, Dongha; Satoh, Kimihiro; Wang, Rongjun; Xue, Lin; Pakala, Mahendra

2018-02-01

High volume spin transfer torque magnetoresistance random access memory (STT-MRAM) for standalone and embedded applications requires a thin perpendicular magnetic tunnel junction (pMTJ) stack (˜10 nm) with a tunnel magnetoresistance (TMR) ratio over 200% after high temperature back-end-of-line (BEOL) processing up to 400 °C. A thin reference layer with low magnetic moment and strong perpendicular magnetic anisotropy (PMA) is key to reduce the total thickness of the full pMTJ stack. We demonstrated strong interfacial PMA and a perpendicular Ruderman-Kittel-Kasuya-Yosida exchange interaction in the Co/Ir system. Owing to the additional high PMA at the Ir/Co interface in combination with a conventional CoFeB/MgO interface in the Ir/Co/Mo/CoFeB/MgO reference layer, the full film pMTJ showed a TMR ratio over 210% after annealing at 400 °C for 150 min. The high TMR ratio can be attributed to the thin stack design by combining a thin reference layer with the efficient compensation by a thin pinned layer. The annealing stability may be explained by the absence of solid solution in the Co-Ir system and the low oxygen affinity of Mo in the reference layer and the free layer. High device performance with a TMR ratio over 210% was also confirmed after subjecting the patterned devices to BEOL processing temperatures of up to 400 °C. This proposed pMTJ design is suitable for both standalone and embedded STT-MRAM applications.

Development of a liquid lithium thin film for use as a heavy ion beam stripper.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Momozaki, Y.; Nolen, J.; Reed, C.

2009-04-01

A series of experiments was performed to investigate the feasibility of a liquid lithium thin film for a charge stripper in a high-power heavy ion linac. Various preliminary experiments using simulants were first conducted to determine the film formation scheme, to investigate the film stability, and to obtain the design parameters for a liquid lithium thin film system. Based on the results from these preliminary studies, a prototypical, high pressure liquid lithium system was constructed to demonstrate liquid lithium thin film formation. This system was capable of driving liquid lithium at {approx}< 300 C and up to 13.9 MPa (2000more » psig) through a nozzle opening as large as 1 mm (40 mil) in diameter. This drive pressure corresponds to a Li velocity of >200 m/s. A thin lithium film of 9 mm in width at velocity of {approx}58 m/s was produced. Its thickness was estimated to be roughly {approx}< 13 {micro}m. High vacuum was maintained in the area of the film. This type of liquid metal thin film may also be used in other high power beam applications such as for intense X-ray or neutron sources.« less

High performance thin film transistor with ZnO channel layer deposited by DC magnetron sputtering.

PubMed

Moon, Yeon-Keon; Moon, Dae-Yong; Lee, Sang-Ho; Jeong, Chang-Oh; Park, Jong-Wan

2008-09-01

Research in large area electronics, especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs). ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputtering methods. On the other hand, we studied ZnO thin films deposited with DC magnetron sputtering for the channel layer of TFTs. After analyzing the basic physical and chemical properties of ZnO thin films, we fabricated a TFT-unit cell using ZnO thin films for the channel layer. The field effect mobility (micro(sat)) of 1.8 cm2/Vs and threshold voltage (Vth) of -0.7 V were obtained.

High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics

NASA Astrophysics Data System (ADS)

Jiang, C.; Rumyantsev, S. L.; Samnakay, R.; Shur, M. S.; Balandin, A. A.

2015-02-01

We report on fabrication of MoS2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS2 thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a "memory step," was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS2 thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS2 thin-film transistors in extreme-temperature electronics and sensors.

Spectroscopic Ellipsometry Studies of Thin Film a-Si:H Solar Cell Fabrication by Multichamber Deposition in the n-i-p Substrate Configuration

NASA Astrophysics Data System (ADS)

Dahal, Lila Raj

Real time spectroscopic ellipsometry (RTSE), and ex-situ mapping spectroscopic ellipsometry (SE) are powerful characterization techniques capable of performance optimization and scale-up evaluation of thin film solar cells used in various photovoltaics technologies. These non-invasive optical probes employ multichannel spectral detection for high speed and provide high precision parameters that describe (i) thin film structure, such as layer thicknesses, and (ii) thin film optical properties, such as oscillator variables in analytical expressions for the complex dielectric function. These parameters are critical for evaluating the electronic performance of materials in thin film solar cells and also can be used as inputs for simulating their multilayer optical performance. In this Thesis, the component layers of thin film hydrogenated silicon (Si:H) solar cells in the n-i-p or substrate configuration on rigid and flexible substrate materials have been studied by RTSE and ex-situ mapping SE. Depositions were performed by magnetron sputtering for the metal and transparent conducting oxide contacts and by plasma enhanced chemical vapor deposition (PECVD) for the semiconductor doped contacts and intrinsic absorber layers. The motivations are first to optimize the thin film Si:H solar cell in n-i-p substrate configuration for single-junction small-area dot cells and ultimately to scale-up the optimized process to larger areas with minimum loss in device performance. Deposition phase diagrams for both i- and p -layers on 2" x 2" rigid borosilicate glass substrate were developed as functions of the hydrogen-to-silane flow ratio in PECVD. These phase diagrams were correlated with the performance parameters of the corresponding solar cells, fabricated in the Cr/Ag/ZnO/n/i/ p/ITO structure. In both cases, optimization was achieved when the layers were deposited in the protocrystalline phase. Identical solar cell structures were fabricated on 6" x 6" borosilicate glass with 256 cells followed by ex-situ mapping SE on each cell to achieve better statistics for solar cell optimization by correlating local structural parameters with solar cell parameters. Solar cells of similar structure were also fabricated on flexible polymer substrates in the roll-to-roll configuration. In this configuration as well, RTSE was demonstrated as an effective process monitoring and control tool for thin film photovoltaics.

Enhanced performance of solution-processed organic thin-film transistors with a low-temperature-annealed alumina interlayer between the polyimide gate insulator and the semiconductor.

PubMed

Yoon, Jun-Young; Jeong, Sunho; Lee, Sun Sook; Kim, Yun Ho; Ka, Jae-Won; Yi, Mi Hye; Jang, Kwang-Suk

2013-06-12

We studied a low-temperature-annealed sol-gel-derived alumina interlayer between the organic semiconductor and the organic gate insulator for high-performance organic thin-film transistors. The alumina interlayer was deposited on the polyimide gate insulator by a simple spin-coating and 200 °C-annealing process. The leakage current density decreased by the interlayer deposition: at 1 MV/cm, the leakage current densities of the polyimide and the alumina/polyimide gate insulators were 7.64 × 10(-7) and 3.01 × 10(-9) A/cm(2), respectively. For the first time, enhancement of the organic thin-film transistor performance by introduction of an inorganic interlayer between the organic semiconductor and the organic gate insulator was demonstrated: by introducing the interlayer, the field-effect mobility of the solution-processed organic thin-film transistor increased from 0.35 ± 0.15 to 1.35 ± 0.28 cm(2)/V·s. Our results suggest that inorganic interlayer deposition could be a simple and efficient surface treatment of organic gate insulators for enhancing the performance of solution-processed organic thin-film transistors.

Optical-to-optical interface device. [consisting of two transparent electrodes on glass substrates that enclose thin film photoconductor and thin layer of nematic liquid crystal

NASA Technical Reports Server (NTRS)

Jacobson, A. D.

1973-01-01

Studies were conducted on the performance of a photoactivated dc liquid crystal light valve. The dc light valve is a thin film device that consists of two transparent electrodes, deposited on glass substrates, that enclose a thin film photoconductor (cadmium sulfide) and a thin layer of a nematic liquid crystal that operates in the dynamic scattering mode. The work was directed toward application of the light valve to high resolution non-coherent light to coherent light image conversion. The goal of these studies was to improve the performance and quality of the already existing dc light valve device and to evaluate quantitatively the properties and performance of the device as they relate to the coherent optical data processing application. As a result of these efforts, device sensitivity was improved by a factor of ten, device resolution was improved by a factor of three, device lifetime was improved by two-orders of magnitude, undesirable secondary liquid crystal scattering effects were eliminated, the scattering characteristics of the liquid crystal were thoroughly documented, the cosmetic quality of the devices was dramatically improved, and the performance of the device was fully documented.

Thin co-radial bipolar leads: technology and clinical performance.

PubMed

Fahraeus, T; Israel, C W; Wöllenstein, M

2001-09-01

While bipolar leads offer advantages such as better sensing performance than unipolar leads, their use has been limited by a larger lead diameter and reports about a high failure rate of several bipolar lead models. This has led to the development of thin bipolar leads using a special technology which aims at improving lead safety. Leads with monofilar thin conductors (drawn filled tube) which are individually coated with a very resistant material (ETFE) have been developed. Using a co-radial instead of co-axial bipolar conductor design, the lead diameter could be reduced to 4.5 F compared to 6-7 F of conventional bipolar leads. Bench testing demonstrated a significant improvement of this lead technology with respect to degradation of insulation material by biochemically reactive solutions. Also mechanical characteristics such as resistance to tearing forces and compression showed a high lead durability. From our own experience, co-radial bipolar leads show a favorable electrical performance with the exception of a relatively low pacing impedance. Also during long-term follow-up, the rate of lead failure was very low. These findings are corroborated by other clinical studies which also demonstrated good handling characteristics of thin bipolar leads during implantation.

Cortical thinning in former professional soccer players.

PubMed

Koerte, Inga K; Mayinger, Michael; Muehlmann, Marc; Kaufmann, David; Lin, Alexander P; Steffinger, Denise; Fisch, Barbara; Rauchmann, Boris-Stephan; Immler, Stefanie; Karch, Susanne; Heinen, Florian R; Ertl-Wagner, Birgit; Reiser, Maximilian; Stern, Robert A; Zafonte, Ross; Shenton, Martha E

2016-09-01

Soccer is the most popular sport in the world. Soccer players are at high risk for repetitive subconcussive head impact when heading the ball. Whether this leads to long-term alterations of the brain's structure associated with cognitive decline remains unknown. The aim of this study was to evaluate cortical thickness in former professional soccer players using high-resolution structural MR imaging. Fifteen former male professional soccer players (mean age 49.3 [SD 5.1] years) underwent high-resolution structural 3 T MR imaging, as well as cognitive testing. Fifteen male, age-matched former professional non-contact sport athletes (mean age 49.6 [SD 6.4] years) served as controls. Group analyses of cortical thickness were performed using voxel-based statistics. Soccer players demonstrated greater cortical thinning with increasing age compared to controls in the right inferolateral-parietal, temporal, and occipital cortex. Cortical thinning was associated with lower cognitive performance as well as with estimated exposure to repetitive subconcussive head impact. Neurocognitive evaluation revealed decreased memory performance in the soccer players compared to controls. The association of cortical thinning and decreased cognitive performance, as well as exposure to repetitive subconcussive head impact, further supports the hypothesis that repetitive subconcussive head impact may play a role in early cognitive decline in soccer players. Future studies are needed to elucidate the time course of changes in cortical thickness as well as their association with impaired cognitive function and possible underlying neurodegenerative process.

High-Performance Flexible Force and Temperature Sensing Array with a Robust Structure

NASA Astrophysics Data System (ADS)

Kim, Min-Seok; Song, Han-Wook; Park, Yon-Kyu

We have developed a flexible tactile sensor array capable of sensing physical quantities, e.g. force and temperature with high-performances and high spatial resolution. The fabricated tactile sensor consists of 8 × 8 force measuring array with 1 mm spacing and a thin metal (copper) temperature sensor. The flexible force sensing array consists of sub-millimetre-size bar-shaped semi-conductor strain gage array attached to a thin and flexible printed circuit board covered by stretchable elastomeric material on both sides. This design incorporates benefits of both materials; the semi-conductor's high performance and the polymer's mechanical flexibility and robustness, while overcoming their drawbacks of those two materials. Special fabrication processes, so called “dry-transfer technique” have been used to fabricate the tactile sensor along with standard micro-fabrication processes.

Comparative study of ZnO nanorods and thin films for chemical and biosensing applications and the development of ZnO nanorods based potentiometric strontium ion sensor

NASA Astrophysics Data System (ADS)

Khun, K.; Ibupoto, Z. H.; Chey, C. O.; Lu, Jun.; Nur, O.; Willander, M.

2013-03-01

In this study, the comparative study of ZnO nanorods and ZnO thin films were performed regarding the chemical and biosensing properties and also ZnO nanorods based strontium ion sensor is proposed. ZnO nanorods were grown on gold coated glass substrates by the hydrothermal growth method and the ZnO thin films were deposited by electro deposition technique. ZnO nanorods and thin films were characterised by field emission electron microscopy [FESEM] and X-ray diffraction [XRD] techniques and this study has shown that the grown nanostructures are highly dense, uniform and exhibited good crystal quality. Moreover, transmission electron microscopy [TEM] was used to investigate the quality of ZnO thin film and we observed that ZnO thin film was comprised of nano clusters. ZnO nanorods and thin films were functionalised with selective strontium ionophore salicylaldehyde thiosemicarbazone [ST] membrane, galactose oxidase, and lactate oxidase for the detection of strontium ion, galactose and L-lactic acid, respectively. The electrochemical response of both ZnO nanorods and thin films sensor devices was measured by using the potentiometric method. The strontium ion sensor has exhibited good characteristics with a sensitivity of 28.65 ± 0.52 mV/decade, for a wide range of concentrations from 1.00 × 10-6 to 5.00 × 10-2 M, selectivity, reproducibility, stability and fast response time of 10.00 s. The proposed strontium ion sensor was used as indicator electrode in the potentiometric titration of strontium ion versus ethylenediamine tetra acetic acid [EDTA]. This comparative study has shown that ZnO nanorods possessed better performance with high sensitivity and low limit of detection due to high surface area to volume ratio as compared to the flat surface of ZnO thin films.

Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film.

PubMed

Park, Jeongmin; Kang, Haeyong; Kang, Kyeong Tae; Yun, Yoojoo; Lee, Young Hee; Choi, Woo Seok; Suh, Dongseok

2016-03-09

Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO single-crystal substrate offers good adhesion between the high-k film and graphene, resulting in nonhysteretic conductance as a function of gate voltage at all temperatures down to 2 K. The two-terminal conductance quantization under magnetic fields corresponding to quantum Hall states survives up to 200 K at a magnetic field of 14 T. In addition, the substantial shift of charge neutrality point in graphene seems to correlate with the temperature-dependent dielectric constant of the STO thin film, and its effective dielectric properties could be deduced from the universality of quantum phenomena in graphene. Our experimental data prove that the operating voltage reduction can be successfully realized due to the underlying high-k STO thin film, without any noticeable degradation of graphene device performance.

Removable polytetrafluoroethylene template based epitaxy of ferroelectric copolymer thin films

NASA Astrophysics Data System (ADS)

Xia, Wei; Chen, Qiusong; Zhang, Jian; Wang, Hui; Cheng, Qian; Jiang, Yulong; Zhu, Guodong

2018-04-01

In recent years ferroelectric polymers have shown their great potentials in organic and flexible electronics. To meet the requirements of high-performance and low energy consumption of novel electronic devices and systems, structural and electrical properties of ferroelectric polymer thin films are expected to be further optimized. One possible way is to realize epitaxial growth of ferroelectric thin films via removable high-ordered polytetrafluoroethylene (PTFE) templates. Here two key parameters in epitaxy process, annealing temperature and applied pressure, are systematically studied and thus optimized through structural and electrical measurements of ferroelectric copolymer thin films. Experimental results indicate that controlled epitaxial growth is realized via suitable combination of both parameters. Annealing temperature above the melting point of ferroelectric copolymer films is required, and simultaneously moderate pressure (around 2.0 MPa here) should be applied. Over-low pressure (around 1.0 MPa here) usually results in the failure of epitaxy process, while over-high pressure (around 3.0 MPa here) often results in residual of PTFE templates on ferroelectric thin films.

Electrical instability of high-mobility zinc oxynitride thin-film transistors upon water exposure

NASA Astrophysics Data System (ADS)

Kim, Dae-Hwan; Jeong, Hwan-Seok; Kwon, Hyuck-In

2017-03-01

We investigate the effects of water absorption on the electrical performance and stability in high-mobility zinc oxynitride (ZnON) thin-film transistors (TFTs). The ZnON TFT exhibits a smaller field-effect mobility, lower turn-on voltage, and higher subthreshold slope with a deteriorated electrical stability under positive gate bias stresses after being exposed to water. From the Hall measurements, an increase of the electron concentration and a decrease of the Hall mobility are observed in the ZnON thin film after water absorption. The observed phenomena are mainly attributed to the water molecule-induced increase of the defective ZnXNY bond and the oxygen vacancy inside the ZnON thin film based on the x-ray photoelectron spectroscopy analysis.

Microgravity

NASA Image and Video Library

1999-11-10

Space Vacuum Epitaxy Center works with industry and government laboratories to develop advanced thin film materials and devices by utilizing the most abundant free resource in orbit: the vacuum of space. SVEC, along with its affiliates, is developing semiconductor mid-IR lasers for environmental sensing and defense applications, high efficiency solar cells for space satellite applications, oxide thin films for computer memory applications, and ultra-hard thin film coatings for wear resistance in micro devices. Performance of these vacuum deposited thin film materials and devices can be enhanced by using the ultra-vacuum of space for which SVEC has developed the Wake Shield Facility---a free flying research platform dedicated to thin film materials development in space.

Microgravity

NASA Image and Video Library

2000-11-10

Space Vacuum Epitaxy Center works with industry and government laboratories to develop advanced thin film materials and devices by utilizing the most abundant free resource in orbit: the vacuum of space. SVEC, along with its affiliates, is developing semiconductor mid-IR lasers for environmental sensing and defense applications, high efficiency solar cells for space satellite applications, oxide thin films for computer memory applications, and ultra-hard thin film coatings for wear resistance in micro devices. Performance of these vacuum deposited thin film materials and devices can be enhanced by using the ultra-vacuum of space for which SVEC has developed the Wake Shield Facility---a free flying research platform dedicated to thin film materials development in space.

Dielectric properties of inorganic fillers filled epoxy thin film

NASA Astrophysics Data System (ADS)

Norshamira, A.; Mariatti, M.

2015-07-01

The demand on the small size and high performance electronics has driven changes in the electronic packaging requirements from discrete capacitor to embedded capacitor. Embedded capacitor can improve electrical performance compared with discrete capacitor. This study aimed to achieve high dielectric of epoxy thin film composite that were targeted for application as embedded capacitor. In this study, inorganic fillers such as Calcium Copper Titanate (CCTO), Iron(III) Oxide (Fe2O3) and Titanium Dioxide (TiO2) were loaded in epoxy system at 5 and 20vol%. Morphology and dielectric properties were investigated to identify the effect of fillers loading and types of fillers on the properties of epoxy thin film composite. Based on the study, CCTO with 20vol% loading was found to have good dielectric properties compared to other type of fillers.

Durable high strength cement concrete topping for asphalt roads

NASA Astrophysics Data System (ADS)

Vyrozhemskyi, Valerii; Krayushkina, Kateryna; Bidnenko, Nataliia

2017-09-01

Work on improving riding qualities of pavements by means of placing a thin cement layer with high roughness and strength properties on the existing asphalt pavement were conducted in Ukraine for the first time. Such pavement is called HPCM (High Performance Cementitious Material). This is a high-strength thin cement-layer pavement of 8-9 mm thickness reinforced with metal or polymer fiber of less than 5 mm length. Increased grip properties are caused by placement of stone material of 3-5 mm fraction on the concrete surface. As a result of the research, the preparation and placement technology of high-strength cement thin-layer pavement reinforced with fiber was developed to improve friction properties of existing asphalt pavements which ensures their roughness and durability. It must be emphasized that HPCM is a fundamentally new type of thin-layer pavement in which a rigid layer of 10 mm thickness is placed on a non-rigid base thereby improving riding qualities of asphalt pavement at any season of a year.

Comparison of full 3-D, thin-film 3-D, and thin-film plate analyses of a postbuckled embedded delamination

NASA Technical Reports Server (NTRS)

Whitcomb, John D.

1989-01-01

Strain-energy release rates are often used to predict when delamination growth will occur in laminates under compression. Because of the inherently high computational cost of performing such analyses, less rigorous analyses such as thin-film plate analysis were used. The assumptions imposed by plate theory restrict the analysis to the calculation of total strain energy, G(sub t). The objective is to determine the accuracy of thin-film plate analysis by comparing the distribution of G(sub t) calculated using fully three dimensional (3D), thin-film 3D, and thin-film plate analyses. Thin-film 3D analysis is the same as thin-film plate analysis, except 3D analysis is used to model the sublaminate. The 3D stress analyses were performed using the finite element program NONLIN3D. The plate analysis results were obtained from published data, which used STAGS. Strain-energy release rates were calculated using variations of the virtual crack closure technique. The results demonstrate that thin-film plate analysis can predict the distribution of G(sub t) quite well, at least for the configurations considered. Also, these results verify the accuracy of the strain-energy release rate procedure for plate analysis.

Pressurized planar electrochromatography, high-performance thin-layer chromatography and high-performance liquid chromatography--comparison of performance.

PubMed

Płocharz, Paweł; Klimek-Turek, Anna; Dzido, Tadeusz H

2010-07-16

Kinetic performance, measured by plate height, of High-Performance Thin-Layer Chromatography (HPTLC), High-Performance Liquid Chromatography (HPLC) and Pressurized Planar Electrochromatography (PPEC) was compared for the systems with adsorbent of the HPTLC RP18W plate from Merck as the stationary phase and the mobile phase composed of acetonitrile and buffer solution. The HPLC column was packed with the adsorbent, which was scrapped from the chromatographic plate mentioned. An additional HPLC column was also packed with adsorbent of 5 microm particle diameter, C18 type silica based (LiChrosorb RP-18 from Merck). The dependence of plate height of both HPLC and PPEC separating systems on flow velocity of the mobile phase and on migration distance of the mobile phase in TLC system was presented applying test solute (prednisolone succinate). The highest performance, amongst systems investigated, was obtained for the PPEC system. The separation efficiency of the systems investigated in the paper was additionally confirmed by the separation of test component mixture composed of six hormones. 2010 Elsevier B.V. All rights reserved.

Influence of the morphology of the copper(II) phthalocyanine thin film on the performance of organic field-effect transistors

NASA Astrophysics Data System (ADS)

Xu, Jing; Liu, Xueqiang; Wang, Hailong; Hou, Wenlong; Zhao, Lele; Zhang, Haiquan

2017-01-01

Organic thin-film transistors (OTFTs) with high crystallization copper phthalocyanine (CuPc) active layers were fabricated. The performance of CuPc OTFTs was studied without and with treatment by Solvent Vapor Annealing on CuPc film. The values of the threshold voltage without and with solvent-vapor annealing are -17 V and -10.5 V respectively. The field-effect mobility values in saturation region of CuPc thin-film transistors without and with Solvent Vapor Annealing are 0.00027 cm2/V s and 0.0025 cm2/V s respectively. Meanwhile, the high crystallization of the CuPc film with a larger grain size and less grain boundaries can be observed by investigating the morphology of the CuPc active layer through scanning electron microscopy and X-ray diffraction. The experimental results showed the decreased of the resistance of the conducting channel, that led to a performance improvement of the OTFTs.

Studies on fully transparent Al-Sn-Zn-O thin-film transistors fabricated on glass at low temperature

NASA Astrophysics Data System (ADS)

Cong, Yingying; Han, Dedong; Wu, Jing; Zhao, Nannan; Chen, Zhuofa; Zhao, Feilong; Dong, Junchen; Zhang, Shengdong; Zhang, Xing; Wang, Yi

2015-04-01

High-performance fully transparent Al-Sn-Zn-O thin-film transistors (ATZO TFTs) with excellent electrical performance have been successfully fabricated by RF magnetron sputtering on glass at low temperatures. Two kinds of appropriate ATZO compositions are compared from several perspectives, including film material characteristics, device electrical performances, and fabrication process conditions. Finally, we achieve two excellent ATZO TFTs with competitive advantages. The ATZO TFT with larger amounts of dopants exhibits a superior field effect mobility μFE of 102.38 cm2 V-1 s-1, an ON/OFF current ratio (Ion/Ioff) of 1.18 × 107, and a threshold voltage VT of 1.35 V. The device with smaller amounts of dopants demonstrates better crystal quality and an excellent subthreshold swing SS of 155 mV/dec. Furthermore, it is less affected by oxygen partial pressure. The ATZO thin films display a high transmittance of over 80% in the visible light range.

Fully Solution-Processed Flexible Organic Thin Film Transistor Arrays with High Mobility and Exceptional Uniformity

PubMed Central

Fukuda, Kenjiro; Takeda, Yasunori; Mizukami, Makoto; Kumaki, Daisuke; Tokito, Shizuo

2014-01-01

Printing fully solution-processed organic electronic devices may potentially revolutionize production of flexible electronics for various applications. However, difficulties in forming thin, flat, uniform films through printing techniques have been responsible for poor device performance and low yields. Here, we report on fully solution-processed organic thin-film transistor (TFT) arrays with greatly improved performance and yields, achieved by layering solution-processable materials such as silver nanoparticle inks, organic semiconductors, and insulating polymers on thin plastic films. A treatment layer improves carrier injection between the source/drain electrodes and the semiconducting layer and dramatically reduces contact resistance. Furthermore, an organic semiconductor with large-crystal grains results in TFT devices with shorter channel lengths and higher field-effect mobilities. We obtained mobilities of over 1.2 cm2 V−1 s−1 in TFT devices with channel lengths shorter than 20 μm. By combining these fabrication techniques, we built highly uniform organic TFT arrays with average mobility levels as high as 0.80 cm2 V−1 s−1 and ideal threshold voltages of 0 V. These results represent major progress in the fabrication of fully solution-processed organic TFT device arrays. PMID:24492785

Extremely Bendable, High-Performance Integrated Circuits Using Semiconducting Carbon Nanotube Networks for Digital, Analog, and Radio-Frequency Applications

DTIC Science & Technology

2012-02-07

circuits on mechanically flexible substrates for digital, analog and radio frequency applications. The asobtained thin-film transistors ( TFTs ) exhibit... flexible substrates for digital, analog and radio frequency applications. The as- obtained thin-film transistors ( TFTs ) exhibit highly uniform device...LCD) and organic light- emitting diode ( OLED ) displays lack the transparency and flexibility and are thus unsuitable for flexible electronic

Thin film absorber for a solar collector

DOEpatents

Wilhelm, William G.

1985-01-01

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Solvent-Assisted Surface Engineering for High-Performance All-Inorganic Perovskite Nanocrystal Light-Emitting Diodes.

PubMed

Wang, Lin; Liu, Baiquan; Zhao, Xin; Demir, Hilmi Volkan; Gu, Haoshuang; Sun, Handong

2018-06-13

All-inorganic cesium halide perovskite nanocrystals have attracted much interest in optoelectronic applications for the sake of the readily adjustable band gaps, high photoluminescence quantum yield, pure color emission, and affordable cost. However, because of the ineluctable utilization of organic surfactants during the synthesis, the structural and optical properties of CsPbBr 3 nanocrystals degrade upon transforming from colloidal solutions to solid thin films, which plagues the device operation. Here, we develop a novel solvent-assisted surface engineering strategy, producing high-quality CsPbBr 3 thin films for device applications. A good solvent is first introduced as an assembly trigger to conduct assembly in a one-dimensional direction, which is then interrupted by adding a nonsolvent. The nonsolvent drives the adjacent nanoparticles connecting in a two-dimensional direction. Assembled CsPbBr 3 nanocrystal thin films are densely packed and very smooth with a surface roughness of ∼4.8 nm, which is highly desirable for carrier transport in a light-emitting diode (LED) device. Meanwhile, the film stability is apparently improved. Benefiting from this facile and reliable strategy, we have achieved remarkably improved performance of CsPbBr 3 nanocrystal-based LEDs. Our results not only enrich the methods of nanocrystal surface engineering but also shed light on developing high-performance LEDs.

A Step toward High-Energy Silicon-Based Thin Film Lithium Ion Batteries.

PubMed

Reyes Jiménez, Antonia; Klöpsch, Richard; Wagner, Ralf; Rodehorst, Uta C; Kolek, Martin; Nölle, Roman; Winter, Martin; Placke, Tobias

2017-05-23

The next generation of lithium ion batteries (LIBs) with increased energy density for large-scale applications, such as electric mobility, and also for small electronic devices, such as microbatteries and on-chip batteries, requires advanced electrode active materials with enhanced specific and volumetric capacities. In this regard, silicon as anode material has attracted much attention due to its high specific capacity. However, the enormous volume changes during lithiation/delithiation are still a main obstacle avoiding the broad commercial use of Si-based electrodes. In this work, Si-based thin film electrodes, prepared by magnetron sputtering, are studied. Herein, we present a sophisticated surface design and electrode structure modification by amorphous carbon layers to increase the mechanical integrity and, thus, the electrochemical performance. Therefore, the influence of amorphous C thin film layers, either deposited on top (C/Si) or incorporated between the amorphous Si thin film layers (Si/C/Si), was characterized according to their physical and electrochemical properties. The thin film electrodes were thoroughly studied by means of electrochemical impedance spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. We can show that the silicon thin film electrodes with an amorphous C layer showed a remarkably improved electrochemical performance in terms of capacity retention and Coulombic efficiency. The C layer is able to mitigate the mechanical stress during lithiation of the Si thin film by buffering the volume changes and to reduce the loss of active lithium during solid electrolyte interphase formation and cycling.

High energy-storage performance of 0.9Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.1PbTiO{sub 3} relaxor ferroelectric thin films prepared by RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xiaolin; Zhang, Le; Hao, Xihong, E-mail: xhhao@imust.cn

2015-05-15

Highlights: • High-quality PMN-PT 90/10 RFE thin films were prepared by RF magnetron sputtering. • The maximum discharged density of 31.3 J/cm{sup 3} was obtained in the 750-nm-thick film. • PMN-PT RFE films might be a promising material for energy-storage application. - Abstract: 0.9Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.1PbTiO{sub 3} (PMN-PT 90/10) relaxor ferroelectric thin films with different thicknesses were deposited on the LaNiO{sub 3}/Si (100) by the radio-frequency (RF) magnetron sputtering technique. The effects of thickness and deposition temperature on the microstructure, dielectric properties and the energy-storage performance of the thin films were investigated in detail. X-ray diffraction spectra indicated thatmore » the thin films had crystallized into a pure perovskite phase with a (100)-preferred orientation after annealed at 700 °C. Moreover, all the PMN-PT 90/10 thin films showed the uniform and crack-free surface microstructure. As a result, a larger recoverable energy density of 31.3 J/cm{sup 3} was achieved in the 750-nm-thick film under 2640 kV/cm at room temperature. Thus, PMN-PT 90/10 relaxor thin films are the promising candidate for energy-storage capacitor application.« less

Epitaxial strain relaxation by provoking edge dislocation dipoles

NASA Astrophysics Data System (ADS)

Soufi, A.; El-Hami, K.

2018-02-01

Thin solid films have been used in various devices and engineering systems such as rapid development of highly integrated electronic circuits, the use of surface coatings to protect structural materials in high temperature environments, and thin films are integral parts of many micro-electro-mechanical systems designed to serve as sensors, actuators. Among techniques of ultra-thin films deposition, the heteroepitaxial method becomes the most useful at nanoscale level to obtain performed materials in various applications areas. On the other hand, stresses that appeared during the elaboration of thin films could rise deformations and fractures in materials. The key solution to solve this problem at the nanoscale level is the nucleation of interface dislocations from free surfaces. By provoking edge dislocation dipoles we obtained a strain relaxation in thin films. Moreover, the dynamic of nucleation in edge dislocations from free lateral surfaces was also studied.

3D nanoporous graphene films converted from liquid-crystalline holey graphene oxide for thin and high-performance supercapacitors

NASA Astrophysics Data System (ADS)

Wang, Bin; Liu, Jinzhang; Zhao, Yi; Zheng, Dezhi; Li, Yan; Sha, Jiangbo

2018-01-01

Holey graphene oxide (HGO) is prepared and its liquid crystal (LC) formation in water is investigated. The blade-coated LC-HGO hydrogel is hydrothermally reduced to form 3D nanoporous films used as supercapacitor electrodes. Holey graphene sheets are rumpled and interconnected to form a cellular structure with pore size around 100 nm during the reduction process. Reduced HGO films with different thicknesses are integrated into solid-state symmetric supercapacitors and their electrochemical performances are studied. High specific capacitance up to 304 F g-1 and high volumetric capacitance around 400 F cm-3 are achieved from our thin and flexible devices.

Layer-by-Layer Assembly for Preparation of High-Performance Forward Osmosis Membrane

NASA Astrophysics Data System (ADS)

Yang, Libin; Zhang, Jinglong; Song, Peng; Wang, Zhan

2018-01-01

Forward osmosis (FO) membrane with high separation performance is needed to promote its practical applications. Herein, layer-by-layer (LbL) approach was used to prepare a thin and highly cross-linked polyamide layer on a polyacrylonitrile substrate surface to prepare a thin-film composite forward osmosis (TFC-FO) membrane with enhanced FO performance. The effects of monomer concentrations and assembly cycles on the performance of the TFC-FO membranes were systematically investigated. Under the optimal preparation condition, TFC-FO membrane achieved the best performance, exhibiting the water flux of 14.4/6.9 LMH and reverse salt flux of 7.7/3.8 gMH under the pressure retarded osmosis/forward osmosis (PRO/FO) mode using 1M NaCl as the draw against a DI-water feed, and a rejection of 96.1% for 2000 mg/L NaCl aqueous solution. The result indicated that layer-by-layer method was a potential method to regulate the structure and performance of the TFC-FO membrane.

The relationship between scleral staphyloma and choroidal thinning in highly myopic eyes: The Beijing Eye Study.

PubMed

Zhou, Ling Xiao; Shao, Lei; Xu, Liang; Wei, Wen Bin; Wang, Ya Xing; You, Qi Sheng

2017-08-29

Based on the Beijing Eye Study 2011, a detailed ophthalmic examination was performed including spectral-domain optical coherence tomography (SD-OCT) with enhanced depth imaging for measurement of subfoveal choroidal thickness (SFCT) and relative height of posterior scleral staphyloma. OCT images were obtained in 103 highly myopic eyes (≤-6.00 diopters) and 227 normal eyes. The mean SFCT in highly myopic eyes was 110.6 ± 85.2 μm (range, 3 to 395 μm). The SFCT of high myopia without posterior scleral staphyloma(55 eyes) was 157.79 ± 85.18 μm, which was significantly greater than that (54.94 ± 49.96 μm) of high myopia with posterior scleral staphyloma (48 eyes) (P < 0.001). In multivariate analysis, posterior scleral staphyloma was the most important factor of choroidal thinning in high myopia (F = 22.63; P < 0.001), then age (F = 19.14; P < 0.001), axial length (F = 17.37; P < 0.001) and gender (F = 17.31; P < 0.001). The SFCT in highly myopic eyes is very thin and undergoes further thinning with increasing age and axial length (refractive error). Posterior staphyloma formation was a key factor in choroidal thinning in highly myopic eyes and to be a good indicator for risk management of choroidal thinning. Abnormalities of the choroid may play a role in the pathogenesis of myopic degeneration.

Research, development and pilot production of high output thin silicon solar cells

NASA Technical Reports Server (NTRS)

Iles, P. A.

1976-01-01

Work was performed to define and apply processes which could lead to high output from thin (2-8 mils) silicon solar cells. The overall problems are outlined, and two satisfactory process sequences were developed. These sequences led to good output cells in the thickness range to just below 4 mils; although the initial contract scope was reduced, one of these sequences proved capable of operating beyond a pilot line level, to yield good quality 4-6 mil cells of high output.

Nanostructured manganese oxide thin films as electrode material for supercapacitors

NASA Astrophysics Data System (ADS)

Xia, Hui; Lai, Man On; Lu, Li

2011-01-01

Electrochemical capacitors, also called supercapacitors, are alternative energy storage devices, particularly for applications requiring high power densities. Recently, manganese oxides have been extensively evaluated as electrode materials for supercapacitors due to their low cost, environmental benignity, and promising supercapacitive performance. In order to maximize the utilization of manganese oxides as the electrode material for the supercapacitors and improve their supercapacitive performance, the nanostructured manganese oxides have therefore been developed. This paper reviews the synthesis of the nanostructured manganese oxide thin films by different methods and the supercapacitive performance of different nanostructures.

Characterization of the punching shear capacity of thin ultra-high performance concrete slabs.

DOT National Transportation Integrated Search

2005-01-01

Ultra-high performance concrete (UHPC) is a relatively new type of concrete that exhibits mechanical properties that are far superior to those of conventional concrete and in some cases rival those of steel. The main characteristics that distinguish ...

High-performance FeSe0.5Te0.5 thin films fabricated on less-well-textured flexible coated conductor templates

NASA Astrophysics Data System (ADS)

Xu, Zhongtang; Yuan, Pusheng; Ma, Yanwei; Cai, Chuanbing

2017-03-01

We report on the transport properties of FeSe0.5Te0.5 (FST) thin films fabricated on less-well-textured flexible coated conductor templates with LaMnO3 (LMO) as buffer layers using pulsed laser deposition. The LMO buffer layers exhibit large in-plane misalignment of ˜7.72°, which is unfavorable for cuprate-coated conductors due to the high grain boundaries. The FST thin films show a superconducting transition temperature of 16.8 K, higher than that of bulk materials due to the compressive strain between LMO and FST. Atomic force microscopy observations reveal that island-like features appear at the surfaces of both LMO and FST, confirming the island growth mode. A self-field transport critical-current density of up to 0.43 MA cm-2 at 4.2 K has been observed in FST thin films, which is much higher than that in powder-in-tube processed FST tapes. The films are capable of carrying current densities of over 105 A cm-2 in the whole applied magnetic field up to 9 T, showing great potential for high-field applications. The results indicate that, for FST, highly textured metal tapes are not needed to produce coated conductors with high performance, which is of great advantage over cuprate-coated conductors.

Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors

PubMed Central

Ahn, Cheol Hyoun; Senthil, Karuppanan; Cho, Hyung Koun; Lee, Sang Yeol

2013-01-01

High-performance thin-film transistors (TFTs) are the fundamental building blocks in realizing the potential applications of the next-generation displays. Atomically controlled superlattice structures are expected to induce advanced electric and optical performance due to two-dimensional electron gas system, resulting in high-electron mobility transistors. Here, we have utilized a semiconductor/insulator superlattice channel structure comprising of ZnO/Al2O3 layers to realize high-performance TFTs. The TFT with ZnO (5 nm)/Al2O3 (3.6 nm) superlattice channel structure exhibited high field effect mobility of 27.8 cm2/Vs, and threshold voltage shift of only < 0.5 V under positive/negative gate bias stress test during 2 hours. These properties showed extremely improved TFT performance, compared to ZnO TFTs. The enhanced field effect mobility and stability obtained for the superlattice TFT devices were explained on the basis of layer-by-layer growth mode, improved crystalline nature of the channel layers, and passivation effect of Al2O3 layers. PMID:24061388

Optical Characterization of Pulse Laser Deposition of Thin Films of Hard Materials Using RHEED and AFM Techniques

DTIC Science & Technology

2011-12-20

diamond thin-film generation. PLD is initiated by laser ablation, which is essentially evaporation of a material by a high - powered laser. Subsequently...COVERED (From - To) 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR( S ) 5d...PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME( S ) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION

Air-Flow Navigated Crystal Growth for TIPS Pentacene-Based Organic Thin-Film Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Zhengran; Chen, Jihua; Sun, Zhenzhong

2012-01-01

6,13-bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) is a promising active channel material of organic thin-film transistors (OTFTs) due to its solubility, stability, and high mobility. However, the growth of TIPS pentacene crystals is intrinsically anisotropic and thus leads to significant variation in the performance of OTFTs. In this paper, air flow is utilized to effectively reduce the TIPS pentacene crystal anisotropy and enhance performance consistency in OTFTs, and the resulted films are examined with optical microscopy, grazing-incidence X-ray diffraction, and thin-film transistor measurements. Under air-flow navigation (AFN), TIPS pentacene drop-cast from toluene solution has been observed to form thin films with improved crystalmore » orientation and increased areal coverage on substrates, which subsequently lead to a four-fold increase of average hole mobility and one order of magnitude enhancement in performance consistency defined by the ratio of average mobility to the standard deviation of the field-effect mobilities.« less

Fully-printed high-performance organic thin-film transistors and circuitry on one-micron-thick polymer films

NASA Astrophysics Data System (ADS)

Fukuda, Kenjiro; Takeda, Yasunori; Yoshimura, Yudai; Shiwaku, Rei; Tran, Lam Truc; Sekine, Tomohito; Mizukami, Makoto; Kumaki, Daisuke; Tokito, Shizuo

2014-06-01

Thin, ultra-flexible devices that can be manufactured in a process that covers a large area will be essential to realizing low-cost, wearable electronic applications including foldable displays and medical sensors. The printing technology will be instrumental in fabricating these novel electronic devices and circuits; however, attaining fully printed devices on ultra-flexible films in large areas has typically been a challenge. Here we report on fully printed organic thin-film transistor devices and circuits fabricated on 1-μm-thick parylene-C films with high field-effect mobility (1.0 cm2 V-1 s-1) and fast operating speeds (about 1 ms) at low operating voltages. The devices were extremely light (2 g m-2) and exhibited excellent mechanical stability. The devices remained operational even under 50% compressive strain without significant changes in their performance. These results represent significant progress in the fabrication of fully printed organic thin-film transistor devices and circuits for use in unobtrusive electronic applications such as wearable sensors.

Nonepitaxial Thin-Film InP for Scalable and Efficient Photocathodes.

PubMed

Hettick, Mark; Zheng, Maxwell; Lin, Yongjing; Sutter-Fella, Carolin M; Ager, Joel W; Javey, Ali

2015-06-18

To date, some of the highest performance photocathodes of a photoelectrochemical (PEC) cell have been shown with single-crystalline p-type InP wafers, exhibiting half-cell solar-to-hydrogen conversion efficiencies of over 14%. However, the high cost of single-crystalline InP wafers may present a challenge for future large-scale industrial deployment. Analogous to solar cells, a thin-film approach could address the cost challenges by utilizing the benefits of the InP material while decreasing the use of expensive materials and processes. Here, we demonstrate this approach, using the newly developed thin-film vapor-liquid-solid (TF-VLS) nonepitaxial growth method combined with an atomic-layer deposition protection process to create thin-film InP photocathodes with large grain size and high performance, in the first reported solar device configuration generated by materials grown with this technique. Current-voltage measurements show a photocurrent (29.4 mA/cm(2)) and onset potential (630 mV) approaching single-crystalline wafers and an overall power conversion efficiency of 11.6%, making TF-VLS InP a promising photocathode for scalable and efficient solar hydrogen generation.

Transparent and flexible heaters based on Al:ZnO degenerate semiconductor

NASA Astrophysics Data System (ADS)

Roul, Monee K.; Obasogie, Brandon; Kogo, Gilbert; Skuza, J. R.; Mundle, R. M.; Pradhan, A. K.

2017-10-01

We report on high performance transparent Al:ZnO (AZO) thin film heaters on flexible polymer (polyethylene terephthalate) and glass substrates which demonstrate low sheet resistivity. AZO thin films were grown by radio-frequency magnetron sputtering at low Ts (below 200 °C) on flexible, transparent polyethylene terephthalate substrates that show stable and reproducible results by applying low (<10 V) voltages. This study also examined identical AZO thin films on glass substrates that showed highly reproducible heating effects due to the Joule heating effect. The potential applications are foldable and wearable electronics, pain/injury therapy smart windows, automobile window defrosters, and low-cost power electronics.

Amorphous and Crystalline Vanadium Oxides as High-Energy and High-Power Cathodes for Three-Dimensional Thin-Film Lithium Ion Batteries.

PubMed

Mattelaer, Felix; Geryl, Kobe; Rampelberg, Geert; Dendooven, Jolien; Detavernier, Christophe

2017-04-19

Flexible wearable electronics and on-chip energy storage for wireless sensors drive rechargeable batteries toward thin-film lithium ion batteries. To enable more charge storage on a given surface, higher energy density materials are required, while faster energy storage and release can be obtained by going to thinner films. Vanadium oxides have been examined as cathodes in classical and thin-film lithium ion batteries for decades, but amorphous vanadium oxide thin films have been mostly discarded. Here, we investigate the use of atomic layer deposition, which enables electrode deposition on complex three-dimensional (3D) battery architectures, to obtain both amorphous and crystalline VO 2 and V 2 O 5 , and we evaluate their thin-film cathode performance. Very high volumetric capacities are found, alongside excellent kinetics and good cycling stability. Better kinetics and higher volumetric capacities were observed for the amorphous vanadium oxides compared to their crystalline counterparts. The conformal deposition of these vanadium oxides on silicon micropillar structures is demonstrated. This study shows the promising potential of these atomic layer deposited vanadium oxides as cathodes for 3D all-solid-state thin-film lithium ion batteries.

Transparent conductive coatings

NASA Technical Reports Server (NTRS)

Ashok, S.

1983-01-01

Thin film transparent conductors are discussed. Materials with electrical conductivity and optical transparency are highly desirable in many optoelectronic applications including photovoltaics. Certain binary oxide semiconductors such as tin oxide (SnO2) and indium oxide (In2O3) offer much better performance tradeoff in optoelectronics as well as better mechanical and chemical stability than thin semitransparent films. These thin-film transparent conductors (TC) are essentially wide-bandgap degenerate semiconductors - invariably n-type - and hence are transparent to sub-bandgap (visible) radiation while affording high electrical conductivity due to the large free electron concentration. The principal performance characteristics of TC's are, of course, electrical conductivity and optical transmission. The TC's have a refractive index of around 2.0 and hence act as very efficient antireflection coatings. For using TC's in surface barrier solar cells, the photovoltaic barrier is of utmost importance and so the work function or electron affinity of the TC is also a very important material parameter. Fabrication processes are discussed.

Dielectric properties of inorganic fillers filled epoxy thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Norshamira, A., E-mail: myra.arshad@gmail.com; Mariatti, M., E-mail: mariatti@usm.my

2015-07-22

The demand on the small size and high performance electronics has driven changes in the electronic packaging requirements from discrete capacitor to embedded capacitor. Embedded capacitor can improve electrical performance compared with discrete capacitor. This study aimed to achieve high dielectric of epoxy thin film composite that were targeted for application as embedded capacitor. In this study, inorganic fillers such as Calcium Copper Titanate (CCTO), Iron(III) Oxide (Fe{sub 2}O{sub 3}) and Titanium Dioxide (TiO{sub 2}) were loaded in epoxy system at 5 and 20vol%. Morphology and dielectric properties were investigated to identify the effect of fillers loading and types ofmore » fillers on the properties of epoxy thin film composite. Based on the study, CCTO with 20vol% loading was found to have good dielectric properties compared to other type of fillers.« less

Thermoelectric effects of amorphous Ga-Sn-O thin film

NASA Astrophysics Data System (ADS)

Matsuda, Tokiyoshi; Uenuma, Mutsunori; Kimura, Mutsumi

2017-07-01

The thermoelectric effects of an amorphous Ga-Sn-O (a-GTO) thin film have been evaluated as a physical parameter of a novel oxide semiconductor. Currently, a-GTO thin films are greatly desired not only because they do not contain rare metals and are therefore free from problems on the exhaustion of resources and the increase in cost but also because their initial characteristics and performance stabilities are excellent when they are used in thin-film transistors. In this study, an a-GTO thin film was deposited on a quartz substrate by RF magnetron sputtering and postannealing was performed in air at 350 °C for 1 h using an annealing furnace. The Seebeck coefficient and electrical conductivity of the a-GTO thin film were -137 µV/K and 31.8 S/cm at room temperature, and -183 µV/K and 43.8 S/cm at 397 K, respectively, and as a result, the power factor was 1.47 µW/(cm·K2) at 397 K; these values were roughly as high as those of amorphous In-Ga-Zn-O (a-IGZO) thin films. Therefore, a-GTO thin films will be a candidate material for thermoelectric devices fabricated in a large area at a low cost by controlling the carrier mobility, carrier density, device structures, and so forth.

Low-cost thin-film absorber/evaporator for an absorption chiller. Final report, May 1992-April 1993

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lowenstein, A.; Sibilia, M.

1993-04-01

The feasibility of making the absorber and evaporator of a small lithium-bromide absorption chiller from thin plastic films was studied. Tests were performed to measure (1) pressure limitations for a plastic thin-film heat exchanger, (2) flow pressure-drop characteristics, (3) air permeation rates across the plastic films, and (4) creep characteristics of the plastic films. Initial tests were performed on heat exchangers made of either low-density polyethylene (LDPE), high-density polyethylene (HDPE), or a LDPE/HDPE blend. While initial designs for the heat exchanger failed at internal pressures of only 5 to 6 psi, the final design could withstand pressures of 34 psi.

Correcting bias in the rational polynomial coefficients of satellite imagery using thin-plate smoothing splines

NASA Astrophysics Data System (ADS)

Shen, Xiang; Liu, Bin; Li, Qing-Quan

2017-03-01

The Rational Function Model (RFM) has proven to be a viable alternative to the rigorous sensor models used for geo-processing of high-resolution satellite imagery. Because of various errors in the satellite ephemeris and instrument calibration, the Rational Polynomial Coefficients (RPCs) supplied by image vendors are often not sufficiently accurate, and there is therefore a clear need to correct the systematic biases in order to meet the requirements of high-precision topographic mapping. In this paper, we propose a new RPC bias-correction method using the thin-plate spline modeling technique. Benefiting from its excellent performance and high flexibility in data fitting, the thin-plate spline model has the potential to remove complex distortions in vendor-provided RPCs, such as the errors caused by short-period orbital perturbations. The performance of the new method was evaluated by using Ziyuan-3 satellite images and was compared against the recently developed least-squares collocation approach, as well as the classical affine-transformation and quadratic-polynomial based methods. The results show that the accuracies of the thin-plate spline and the least-squares collocation approaches were better than the other two methods, which indicates that strong non-rigid deformations exist in the test data because they cannot be adequately modeled by simple polynomial-based methods. The performance of the thin-plate spline method was close to that of the least-squares collocation approach when only a few Ground Control Points (GCPs) were used, and it improved more rapidly with an increase in the number of redundant observations. In the test scenario using 21 GCPs (some of them located at the four corners of the scene), the correction residuals of the thin-plate spline method were about 36%, 37%, and 19% smaller than those of the affine transformation method, the quadratic polynomial method, and the least-squares collocation algorithm, respectively, which demonstrates that the new method can be more effective at removing systematic biases in vendor-supplied RPCs.

Electronic Devices Based on Oxide Thin Films Fabricated by Fiber-to-Film Process.

PubMed

Meng, You; Liu, Ao; Guo, Zidong; Liu, Guoxia; Shin, Byoungchul; Noh, Yong-Young; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai

2018-05-30

Technical development for thin-film fabrication is essential for emerging metal-oxide (MO) electronics. Although impressive progress has been achieved in fabricating MO thin films, the challenges still remain. Here, we report a versatile and general thermal-induced nanomelting technique for fabricating MO thin films from the fiber networks, briefly called fiber-to-film (FTF) process. The high quality of the FTF-processed MO thin films was confirmed by various investigations. The FTF process is generally applicable to numerous technologically relevant MO thin films, including semiconducting thin films (e.g., In 2 O 3 , InZnO, and InZrZnO), conducting thin films (e.g., InSnO), and insulating thin films (e.g., AlO x ). By optimizing the fabrication process, In 2 O 3 /AlO x thin-film transistors (TFTs) were successfully integrated by fully FTF processes. High-performance TFT was achieved with an average mobility of ∼25 cm 2 /(Vs), an on/off current ratio of ∼10 7 , a threshold voltage of ∼1 V, and a device yield of 100%. As a proof of concept, one-transistor-driven pixel circuit was constructed, which exhibited high controllability over the light-emitting diodes. Logic gates based on fully FTF-processed In 2 O 3 /AlO x TFTs were further realized, which exhibited good dynamic logic responses and voltage amplification by a factor of ∼4. The FTF technique presented here offers great potential in large-area and low-cost manufacturing for flexible oxide electronics.

Parallel Microcracks-based Ultrasensitive and Highly Stretchable Strain Sensors.

PubMed

Amjadi, Morteza; Turan, Mehmet; Clementson, Cameron P; Sitti, Metin

2016-03-02

There is an increasing demand for flexible, skin-attachable, and wearable strain sensors due to their various potential applications. However, achieving strain sensors with both high sensitivity and high stretchability is still a grand challenge. Here, we propose highly sensitive and stretchable strain sensors based on the reversible microcrack formation in composite thin films. Controllable parallel microcracks are generated in graphite thin films coated on elastomer films. Sensors made of graphite thin films with short microcracks possess high gauge factors (maximum value of 522.6) and stretchability (ε ≥ 50%), whereas sensors with long microcracks show ultrahigh sensitivity (maximum value of 11,344) with limited stretchability (ε ≤ 50%). We demonstrate the high performance strain sensing of our sensors in both small and large strain sensing applications such as human physiological activity recognition, human body large motion capturing, vibration detection, pressure sensing, and soft robotics.

Facile green synthesis of silver nanodendrite/cellulose acetate thin film electrodes for flexible supercapacitors.

PubMed

Devarayan, Kesavan; Park, Jiyoung; Kim, Hak-Yong; Kim, Byoung-Suhk

2017-05-01

In this study, we present a highly efficient and economical solution called as 'in situ hydrogenation' for preparation of highly conductive thin film electrode based on silver nanodendrites. The silver nanodendrite (AgND)/cellulose acetate (CA) thin film electrodes exhibited sheet resistance ranging from 0.32ohm/sq to 122.1ohm/sq which could be controlled by changing the concentration of both silver and polymer. In addition, these electrodes exhibited outstanding toughness during the bending test. Further, these thin film electrodes have great potential for scale-up with an average weight of 3mg/cm 2 and can be also combined with active nanomaterials such as multiwalled carbon nanotubes (MWCNTs) to fabricate AgND/CA/MWCNTs thin film for high-performance flexible supercapacitor electrode. The AgND/CA/MWCNTs electrodes exhibited a maximum specific capacitance of 237F/g at a current density of 0.3A/g. After 1000 cycles, the AgND/MWCNT/CA exhibited a decrease of 16.0% of specific capacitance. Copyright © 2017 Elsevier Ltd. All rights reserved.

12-GHz thin-film transistors on transferrable silicon nanomembranes for high-performance flexible electronics.

PubMed

Sun, Lei; Qin, Guoxuan; Seo, Jung-Hun; Celler, George K; Zhou, Weidong; Ma, Zhenqiang

2010-11-22

Multigigahertz flexible electronics are attractive and have broad applications. A gate-after-source/drain fabrication process using preselectively doped single-crystal silicon nanomembranes (SiNM) is an effective approach to realizing high device speed. However, further downscaling this approach has become difficult in lithography alignment. In this full paper, a local alignment scheme in combination with more accurate SiNM transfer measures for minimizing alignment errors is reported. By realizing 1 μm channel alignment for the SiNMs on a soft plastic substrate, thin-film transistors with a record speed of 12 GHz maximum oscillation frequency are demonstrated. These results indicate the great potential of properly processed SiNMs for high-performance flexible electronics.

High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chiarella, F., E-mail: fabio.chiarella@spin.cnr.it; Barra, M.; Ciccullo, F.

In this paper, we report on the fabrication of N,N′-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN{sub 2}) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm{sup 2}/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound.

Strategies to reduce the open-circuit voltage deficit in Cu2ZnSn(S,Se)4 thin film solar cells

NASA Astrophysics Data System (ADS)

Kim, Jekyung; Shin, Byungha

2017-09-01

Cu2ZnSn(S,Se)4 thin film solar cell has attracted significant attention in thin film solar cell technologies considering its low-cost, non-toxicity, and earth-abundance. However, the highest efficiency still remains at 12.6%, far below the theoretical efficiency of Shockley-Queisser (SQ) limit of around 30%. The limitation behind such shortcoming in the device performance was reported to stem primarily from a high V oc deficit compared to other thin film solar cell technologies such as CdTe or Cu(In,Ga)Se2 (CIGS), whose origins are attributed to the prevalence of band tailing from cation disordering as well as to the high recombination at the interfaces. In this report, systematic studies on the causes of a high V oc deficit and associated remarkable approaches to achieve high V oc have been reviewed, provided with a guidance on the future direction of CZTSSe research in resolving the high V oc deficit issue. [Figure not available: see fulltext.

Facile fabrication of large-grain CH3NH3PbI3−xBrx films for high-efficiency solar cells via CH3NH3Br-selective Ostwald ripening

PubMed Central

Yang, Mengjin; Zhang, Taiyang; Schulz, Philip; Li, Zhen; Li, Ge; Kim, Dong Hoe; Guo, Nanjie; Berry, Joseph J.; Zhu, Kai; Zhao, Yixin

2016-01-01

Organometallic halide perovskite solar cells (PSCs) have shown great promise as a low-cost, high-efficiency photovoltaic technology. Structural and electro-optical properties of the perovskite absorber layer are most critical to device operation characteristics. Here we present a facile fabrication of high-efficiency PSCs based on compact, large-grain, pinhole-free CH3NH3PbI3−xBrx (MAPbI3−xBrx) thin films with high reproducibility. A simple methylammonium bromide (MABr) treatment via spin-coating with a proper MABr concentration converts MAPbI3 thin films with different initial film qualities (for example, grain size and pinholes) to high-quality MAPbI3−xBrx thin films following an Ostwald ripening process, which is strongly affected by MABr concentration and is ineffective when replacing MABr with methylammonium iodide. A higher MABr concentration enhances I–Br anion exchange reaction, yielding poorer device performance. This MABr-selective Ostwald ripening process improves cell efficiency but also enhances device stability and thus represents a simple, promising strategy for further improving PSC performance with higher reproducibility and reliability. PMID:27477212

Electrochemical Corrosion Properties of Commercial Ultra-Thin Copper Foils

NASA Astrophysics Data System (ADS)

Yen, Ming-Hsuan; Liu, Jen-Hsiang; Song, Jenn-Ming; Lin, Shih-Ching

2017-08-01

Ultra-thin electrodeposited Cu foils have been developed for substrate thinning for mobile devices. Considering the corrosion by residual etchants from the lithography process for high-density circuit wiring, this study investigates the microstructural features of ultra-thin electrodeposited Cu foils with a thickness of 3 μm and their electrochemical corrosion performance in CuCl2-based etching solution. X-ray diffraction and electron backscatter diffraction analyses verify that ultra-thin Cu foils exhibit a random texture and equi-axed grains. Polarization curves show that ultra-thin foils exhibit a higher corrosion potential and a lower corrosion current density compared with conventional (220)-oriented foils with fan-like distributed fine-elongated columnar grains. Chronoamperometric results also suggest that ultra-thin foils possess superior corrosion resistance. The passive layer, mainly composed of CuCl and Cu2O, forms and dissolves in sequence during polarization.

Wafer scale fabrication of carbon nanotube thin film transistors with high yield

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tian, Boyuan; Liang, Xuelei, E-mail: liangxl@pku.edu.cn, E-mail: ssxie@iphy.ac.cn; Yan, Qiuping

Carbon nanotube thin film transistors (CNT-TFTs) are promising candidates for future high performance and low cost macro-electronics. However, most of the reported CNT-TFTs are fabricated in small quantities on a relatively small size substrate. The yield of large scale fabrication and the performance uniformity of devices on large size substrates should be improved before the CNT-TFTs reach real products. In this paper, 25 200 devices, with various geometries (channel width and channel length), were fabricated on 4-in. size ridged and flexible substrates. Almost 100% device yield were obtained on a rigid substrate with high out-put current (>8 μA/μm), high on/off current ratiomore » (>10{sup 5}), and high mobility (>30 cm{sup 2}/V·s). More importantly, uniform performance in 4-in. area was achieved, and the fabrication process can be scaled up. The results give us more confidence for the real application of the CNT-TFT technology in the near future.« less

Blending crystalline/liquid crystalline small molecule semiconductors: A strategy towards high performance organic thin film transistors

NASA Astrophysics Data System (ADS)

He, Chao; He, Yaowu; Li, Aiyuan; Zhang, Dongwei; Meng, Hong

2016-10-01

Solution processed small molecule polycrystalline thin films often suffer from the problems of inhomogeneity and discontinuity. Here, we describe a strategy to solve these problems through deposition of the active layer from a blended solution of crystalline (2-phenyl[1]benzothieno[3,2-b][1]benzothiophene, Ph-BTBT) and liquid crystalline (2-(4-dodecylphenyl) [1]benzothieno[3,2-b]benzothiophene, C12-Ph-BTBT) small molecule semiconductors with the hot spin-coating method. Organic thin film transistors with average hole mobility approaching 1 cm2/V s, much higher than that of single component devices, have been demonstrated, mainly due to the improved uniformity, continuity, crystallinity, and stronger intermolecular π-π stacking in blend thin films. Our results indicate that the crystalline/liquid crystalline semiconductor blend method is an effective way to enhance the performance of organic transistors.

Crystalline Stratification in Semiconducting Polymer Thin Film Quantified by Grazing Incidence X-ray Scattering

NASA Astrophysics Data System (ADS)

Gann, Eliot; Caironi, Mario; Noh, Yong-Young; Kim, Yun-Hi; McNeill, Christopher R.

The depth dependence of crystalline structure within thin films is critical for many technological applications, but has been impossible to measure directly using common techniques. In this work, by monitoring diffraction peak intensity and location and utilizing the highly angle-dependent waveguiding effects of X-rays near grazing incidence we quantitatively measure the thickness, roughness and orientation of stratified crystalline layers within thin films of a high-performance semiconducting polymer. In particular, this diffractive X-ray waveguiding reveals a self-organized 5-nm-thick crystalline surface layer with crystalline orientation orthogonal to the underlying 65-nm-thick layer. While demonstrated for an organic semiconductor film, this approach is applicable to any thin film material system where stratified crystalline structure and orientation can influence important interfacial processes such as charge injection and field-effect transport.

Thin-film Rechargeable Lithium Batteries for Implantable Devices

DOE R&D Accomplishments Database

Bates, J. B.; Dudney, N. J.

1997-05-01

Thin films of LiCoO{sub 2} have been synthesized in which the strongest x ray reflection is either weak or missing, indicating a high degree of preferred orientation. Thin film solid state batteries with these textured cathode films can deliver practical capacities at high current densities. For example, for one of the cells 70% of the maximum capacity between 4.2 V and 3 V ({approximately}0.2 mAh/cm{sup 2}) was delivered at a current of 2 mA/cm{sup 2}. When cycled at rates of 0.1 mA/cm{sup 2}, the capacity loss was 0.001%/cycle or less. The reliability and performance of Li LiCoO{sub 2} thin film batteries make them attractive for application in implantable devices such as neural stimulators, pacemakers, and defibrillators.

Electrical-transport properties and microwave device performance of sputtered TlCaBaCuO superconducting thin films

NASA Technical Reports Server (NTRS)

Subramanyam, G.; Kapoor, V. J.; Chorey, C. M.; Bhasin, K. B.

1992-01-01

The paper describes the processing and electrical transport measurements for achieving reproducible high-Tc and high-Jc sputtered TlCaBaCuO thin films on LaAlO3 substrates, for microelectronic applications. The microwave properties of TlCaBaCuO thin films were investigated by designing, fabricating, and characterizing microstrip ring resonators with a fundamental resonance frequency of 12 GHz on 10-mil-thick LaAlO3 substrates. Typical unloaded quality factors for a ring resonator with a superconducting ground plane of 0.3 micron-thickness and a gold ground plane of 1-micron-thickness were above 1500 at 65 K. Typical values of penetration depth at 0 K in the TlCaBaCuO thin films were between 7000 and 8000 A.

Thin-film rechargeable lithium batteries for implantable devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bates, J.b.; Dudney, N.J.

1997-05-01

Thin films of LiCoO{sub 2} have been synthesized in which the strongest x-ray reflection is either weak or missing, indicating a high degree of preferred orientation. Thin-film solid state batteries with these textured cathode films can deliver practical capacities at high current densities. For example, for one of the cells 70% of the maximum capacity between 4.2 V and 3 V ({approximately}0.2 mAh/cm{sup 2}) was delivered at a current of 2 mA/cm{sup 2}. When cycled at rates of 0.1 mA/cm{sup 2}, the capacity loss was 0.001 %/cycle or less. The reliability and performance of Li-LiCoO{sub 2} thin-film batteries make themmore » attractive for application in implantable devices such as neural stimulators, pacemakers, and defibrillators.« less

Randomized Trial Comparing Amniotic Membrane Transplantation with Lamellar Corneal Graft for the Treatment of Corneal Thinning.

PubMed

de Farias, Charles C; Allemann, Norma; Gomes, José Á P

2016-04-01

There are few studies comparing different surgical procedures for the treatment of corneal thinning. Lamellar corneal transplantation (LCT) has been reported to be efficient, but its results can be jeopardized by allograft rejection, opacification, or high astigmatism. Amniotic membrane transplantation (AMT) has been considered a good alternative, but it is not as resistant as LCT and the tissue can be reabsorbed after surgery. A prospective, randomized, interventional, and comparative study of consecutive patients with corneal thinning over 6 months was performed. Ophthalmological examination was performed before transplant surgery and then repeated 1, 7, 15, 30, 90, and 180 days after surgery and ultrasound biomicroscopy was performed before and then 30, 90, and 180 days after surgery to assess corneal thinning. Herpes simplex infection was the main cause of corneal thinning (9 eyes), followed by surgery (cataract, glaucoma, 5 cases), rheumatoid arthritis (1), chemical burn (1), perforating trauma (1), previous band keratopathy treatment (1), and Stevens-Johnson syndrome (1). Although all patients showed significant increase in final thickness in the area of thinning, it was higher in those submitted to LCT at 180 days postoperatively. Regardless of the surgical technique, all patients showed epithelialization. Patients undergoing AMT showed an 89% decrease in neovascularization. Final corrected distance visual acuity was better in patients submitted to AMT. LCT proved to be the best option for treating corneal thinning. AMT represents an alternative that allows good visual recovery but does not restore corneal thickness as efficiently as LCT.

Two-dimensional ultra-thin SiO(x) (0 < x < 2) nanosheets with long-term cycling stability as lithium ion battery anodes.

PubMed

Sun, Lin; Su, Tingting; Xu, Lei; Liu, Meipin; Du, Hong-Bin

2016-03-21

Ultra-thin SiO(x) (0 < x < 2) nanosheets were obtained via a convenient solvothermal route from a Zintl compound CaSi2. After carbon coating, the SiOx@C nanosheet anodes exhibit high capacity, good rate and superior cycling performance for high-capacity lithium ion battery applications. The specific capacity can be maintained as high as 760 mA h g(-1) with almost no capacity decay after 400 cycles at a current density of 0.5 A g(-1).

A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators

NASA Technical Reports Server (NTRS)

Bilodeau, Steven (Inventor); Baum, Thomas H. (Inventor); Roeder, Jeffrey F. (Inventor); Chen, Ing-Shin (Inventor)

2001-01-01

A modified PbZrTiO.sub.3 perovskite crystal material thin film, wherein the PbZrTiO.sub.3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

A-SITE-AND/OR B-SITE-MODIFIED PBZRTIO3 MATERIALS AND (PB, SR, CA, BA, MG) (ZR, TI,NB, TA)O3 FILMS HAVING UTILITY IN FERROELECTRIC RANDOM ACCESS MEMORIES AND HIGH PERFORMANCE THIN FILM MICROACTUATORS

NASA Technical Reports Server (NTRS)

Bilodeau, Steven (Inventor); Baum, Thomas H. (Inventor); Roeder, Jeffrey F. (Inventor); Chen, Ing-Shin (Inventor)

2004-01-01

A modified PbZrTiO.sub.3 perovskite crystal material thin film, wherein the PbZrTiO.sub.3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

Single-crystal-like, c-axis oriented BaTiO3 thin films with high-performance on flexible metal templates for ferroelectric applications

NASA Astrophysics Data System (ADS)

Shin, Junsoo; Goyal, Amit; Jesse, Stephen; Kim, Dae Ho

2009-06-01

Epitaxial, c-axis oriented BaTiO3 thin films were deposited using pulsed laser ablation on flexible, polycrystalline Ni alloy tape with biaxially textured oxide buffer multilayers. The high quality of epitaxial BaTiO3 thin films with P4mm group symmetry was confirmed by x-ray diffraction. The microscopic ferroelectric domain structure and the piezoelectric domain switching in these films were confirmed via spatially resolved piezoresponse mapping and local hysteresis loops. Macroscopic measurements demonstrate that the films have well-saturated hysteresis loops with a high remanent polarization of ˜11.5 μC/cm2. Such high-quality, single-crystal-like BaTiO3 films on low-cost, polycrystalline, flexible Ni alloy substrates are attractive for applications in flexible lead-free ferroelectric devices.

Engineering the Charge Transport of Ag Nanocrystals for Highly Accurate, Wearable Temperature Sensors through All-Solution Processes.

PubMed

Joh, Hyungmok; Lee, Seung-Wook; Seong, Mingi; Lee, Woo Seok; Oh, Soong Ju

2017-06-01

All-nanocrystal (NC)-based and all-solution-processed wearable resistance temperature detectors (RTDs) are introduced. The charge transport mechanisms of Ag NC thin films are engineered through various ligand treatments to design high performance RTDs. Highly conductive Ag NC thin films exhibiting metallic transport behavior with high positive temperature coefficients of resistance (TCRs) are achieved through tetrabutylammonium bromide treatment. Ag NC thin films showing hopping transport with high negative TCRs are created through organic ligand treatment. All-solution-based, one-step photolithography techniques that integrate two distinct opposite-sign TCR Ag NC thin films into an ultrathin single device are developed to decouple the mechanical effects such as human motion. The unconventional materials design and strategy enables highly accurate, sensitive, wearable and motion-free RTDs, demonstrated by experiments on moving or curved objects such as human skin, and simulation results based on charge transport analysis. This strategy provides a low cost and simple method to design wearable multifunctional sensors with high sensitivity which could be utilized in various fields such as biointegrated sensors or electronic skin. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Comparison of two thin-film microextractions for the analysis of estrogens in aqueous tea extract and environmental water samples by high performance liquid chromatography-ultraviolet detection.

PubMed

Cai, Pei-Shan; Li, Dan; Chen, Jing; Xiong, Chao-Mei; Ruan, Jin-Lan

2015-04-15

Two thin-film microextractions (TFME), octadecylsilane (ODS)-polyacrylonitrile (PAN)-TFME and polar enhanced phase (PEP)-PAN-TFME have been proposed for the analysis of bisphenol-A, diethylstilbestrol and 17β-estradiol in aqueous tea extract and environmental water samples followed by high performance liquid chromatography-ultraviolet detection. Both thin-films were prepared by spraying. The influencing factors including pH, extraction time, desorption solvent, desorption volume, desorption time, ion strength and reusability were investigated. Under the optimal conditions, the two TFME methods are similar in terms of the analytical performance evaluated by standard addition method. The limits of detection for three estrogens in environmental water and aqueous tea extract matrix ranged from 1.3 to 1.6 and 2.8 to 7.1 ng mL(-1) by the two TFME methods, respectively. Both approaches were applied for the analysis of analytes in real aqueous tea extract and environmental water samples, presenting satisfactory recoveries ranged from 87.3% to 109.4% for the spiked samples. Copyright © 2014 Elsevier Ltd. All rights reserved.

Fuel Cell Measurements with Cathode Catalysts of Sputtered Pt3 Y Thin Films.

PubMed

Lindahl, Niklas; Eriksson, Björn; Grönbeck, Henrik; Lindström, Rakel Wreland; Lindbergh, Göran; Lagergren, Carina; Wickman, Björn

2018-05-09

Fuel cells are foreseen to have an important role in sustainable energy systems, provided that catalysts with higher activity and stability are developed. In this study, highly active sputtered thin films of platinum alloyed with yttrium (Pt 3 Y) are deposited on commercial gas diffusion layers and their performance in a proton exchange membrane fuel cell is measured. After acid pretreatment, the alloy is found to have up to 2.5 times higher specific activity than pure platinum. The performance of Pt 3 Y is much higher than that of pure Pt, even if all of the alloying element was leached out from parts of the thin metal film on the porous support. This indicates that an even higher performance is expected if the structure of the Pt 3 Y catalyst or the support could be further improved. The results show that platinum alloyed with rare earth metals can be used as highly active cathode catalyst materials, and significantly reduce the amount of platinum needed, in real fuel cells. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Influence of thermal treatment temperature on high-performance varistors prepared by hot-dipping tin oxide thin films in Nb2O5 powder

NASA Astrophysics Data System (ADS)

Wang, Qi; Peng, Zhijian; Wang, Yang; Fu, Xiuli

2018-06-01

SnOx-Nb2O5 thin film varistors were prepared by hot-dipping oxygen-deficient tin oxide films in Nb2O5 powder in air, and the influence of hot-dipping temperature (HDT) on the varistor performance of the samples was systematically explored. When the HDT increased from 300 to 700 °C, the nonlinear coefficient of the samples raised first and then dropped down, reaching the maximum of 14.73 at 500 °C, and the breakdown electric field exhibited a similar variation trend, gaining the peak value of 0.0201 V/nm at this temperature. Correspondingly, the leakage current decreased first and then increased with increasing HDT, reaching the minimum of 17.1 mA/cm2 at 500 °C. Besides, it was proposed that a grain-boundary defect barrier model was responsible for the nonlinear behavior of the obtained SnOx-Nb2O5 film varistors. This high-performance thin film varistor with nanoscaled thickness might be much promising in nano-devices or devices working in low voltage.

A Nanocrystalline Fe2O3 Film Anode Prepared by Pulsed Laser Deposition for Lithium-Ion Batteries

NASA Astrophysics Data System (ADS)

Teng, Xiaoling; Qin, Youzhi; Wang, Xia; Li, Hongsen; Shang, Xiantao; Fan, Shuting; Li, Qiang; Xu, Jie; Cao, Derang; Li, Shandong

2018-02-01

Nanocrystalline Fe2O3 thin films are deposited directly on the conduct substrates by pulsed laser deposition as anode materials for lithium-ion batteries. We demonstrate the well-designed Fe2O3 film electrodes are capable of excellent high-rate performance (510 mAh g- 1 at high current density of 15,000 mA g- 1) and superior cycling stability (905 mAh g- 1 at 100 mA g- 1 after 200 cycles), which are among the best reported state-of-the-art Fe2O3 anode materials. The outstanding lithium storage performances of the as-synthesized nanocrystalline Fe2O3 film are attributed to the advanced nanostructured architecture, which not only provides fast kinetics by the shortened lithium-ion diffusion lengths but also prolongs cycling life by preventing nanosized Fe2O3 particle agglomeration. The electrochemical performance results suggest that this novel Fe2O3 thin film is a promising anode material for all-solid-state thin film batteries.

Development of planar solid oxide fuel cells for power generation applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Minh, N.Q.

1996-04-01

Planar solid oxide fuel cells (SOFCs) are presently being developed for a variety of electric power generation application. The planar design offers simple cell geometry, high power density, and multiple fabrication and gas manifolding options. Planar SOFC technology has received much attention recently, and significant progress has been made in this area. Recent effort at AlliedSignal has focused on the development of high-performance, lightweight planar SOFCs, having thin-electrolyte films, that can be operated efficiently at reduced temperatures (< 1000{degrees}C). The advantages of reduced-temperature operation include wider material choice (including use of metallic interconnects), expected longer cell life, reduced thermal stress,more » improved reliability, and reduced fuel cell cost. The key aspect in the development of thin-film SIFCs is to incorporate the thin electrolyte layer into the desired structure of cells in a manner that yields the required characteristics. AlliedSignal has developed a simple and cost-effective method based on tape calendering for the fabrication of thin-electrolyte SOFCs. Thin-electrolyte cells made by tape calendering have shown extraordinary performance, e.g., producing more than 500mW/cm{sup 2} at 700{degrees}C and 800mW/cm{sup 2} at 800{degrees}C with hydrogen as fuel and air is oxidant. thin-electrolyte single cells have been incorporated into a compliant metallic stack structure and operated at reduced and operated at reduced-temperature conditions.« less

Effects of channel thickness on oxide thin film transistor with double-stacked channel layer

NASA Astrophysics Data System (ADS)

Lee, Kimoon; Kim, Yong-Hoon; Yoon, Sung-Min; Kim, Jiwan; Oh, Min Suk

2017-11-01

To improve the field effect mobility and control the threshold voltage ( V th ) of oxide thin film transistors (TFTs), we fabricated the oxide TFTs with double-stacked channel layers which consist of thick Zn-Sn-O (ZTO) and very thin In-Zn-O (IZO) layers. We investigated the effects of the thickness of thin conductive layer and the conductivity of thick layer on oxide TFTs with doublestacked channel layer. When we changed the thickness of thin conductive IZO channel layer, the resistivity values were changed. This resistivity of thin channel layer affected on the saturation field effect mobility and the off current of TFTs. In case of the thick ZTO channel layer which was deposited by sputtering in Ar: O2 = 10: 1, the device showed better performances than that which was deposited in Ar: O2 = 1: 1. Our TFTs showed high mobility ( μ FE ) of 40.7 cm2/Vs and V th of 4.3 V. We assumed that high mobility and the controlled V th were caused by thin conductive IZO layer and thick stable ZTO layer. Therefore, this double-stacked channel structure can be very promising way to improve the electrical characteristics of various oxide thin film transistors.

PIN architecture for ultrasensitive organic thin film photoconductors.

PubMed

Jin, Zhiwen; Wang, Jizheng

2014-06-17

Organic thin film photoconductors (OTFPs) are expected to have wide applications in the field of optical communications, artificial vision and biomedical sensing due to their great advantages of high flexibility and low-cost large-area fabrication. However, their performances are not satisfactory at present: the value of responsivity (R), the parameter that measures the sensitivity of a photoconductor to light, is below 1 AW(-1). We believe such poor performance is resulted from an intrinsic self-limited effect of present bare blend based device structure. Here we designed a PIN architecture for OTFPs, the PIN device exhibits a significantly improved high R value of 96.5 AW(-1). The PIN architecture and the performance the PIN device shows here should represent an important step in the development of OTFPs.

PIN architecture for ultrasensitive organic thin film photoconductors

PubMed Central

Jin, Zhiwen; Wang, Jizheng

2014-01-01

Organic thin film photoconductors (OTFPs) are expected to have wide applications in the field of optical communications, artificial vision and biomedical sensing due to their great advantages of high flexibility and low-cost large-area fabrication. However, their performances are not satisfactory at present: the value of responsivity (R), the parameter that measures the sensitivity of a photoconductor to light, is below 1 AW−1. We believe such poor performance is resulted from an intrinsic self-limited effect of present bare blend based device structure. Here we designed a PIN architecture for OTFPs, the PIN device exhibits a significantly improved high R value of 96.5 AW−1. The PIN architecture and the performance the PIN device shows here should represent an important step in the development of OTFPs. PMID:24936952

Polycrystalline silicon thin-film transistors with location-controlled crystal grains fabricated by excimer laser crystallization

NASA Astrophysics Data System (ADS)

Tsai, Chun-Chien; Lee, Yao-Jen; Chiang, Ko-Yu; Wang, Jyh-Liang; Lee, I.-Che; Chen, Hsu-Hsin; Wei, Kai-Fang; Chang, Ting-Kuo; Chen, Bo-Ting; Cheng, Huang-Chung

2007-11-01

In this paper, location-controlled silicon crystal grains are fabricated by the excimer laser crystallization method which employs amorphous silicon spacer structure and prepatterned thin films. The amorphous silicon spacer in nanometer-sized width formed using spacer technology is served as seed crystal to artificially control superlateral growth phenomenon during excimer laser irradiation. An array of 1.8-μm-sized disklike silicon grains is formed, and the n-channel thin-film transistors whose channels located inside the artificially-controlled crystal grains exhibit higher performance of field-effect-mobility reaching 308cm2/Vs as compared with the conventional ones. This position-manipulated silicon grains are essential to high-performance and good uniformity devices.

Structural, optical, morphological and electrical properties of undoped and Al-doped ZnO thin films prepared using sol—gel dip coating process

NASA Astrophysics Data System (ADS)

Boukhenoufa, N.; Mahamdi, R.; Rechem, D.

2016-11-01

In this work, sol—gel dip-coating technique was used to elaborate ZnO pure and ZnO/Al films. The impact of Al-doped concentration on the structural, optical, surface morphological and electrical properties of the elaborated samples was investigated. It was found that better electrical and optical performances have been obtained for an Al concentration equal to 5%, where the ZnO thin films exhibit a resistivity value equal to 1.64104 Ω·cm. Moreover, highest transparency has been recorded for the same Al concentration value. The obtained results from this investigation make the developed thin film structure a potential candidate for high optoelectronic performance applications.

Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

NASA Astrophysics Data System (ADS)

Kanno, Isaku

2018-04-01

In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

Photoresponse properties of large area MoS2 metal–semiconductor–metal photodetectors

NASA Astrophysics Data System (ADS)

Ko, Tsung-Shine; Huang, Yu-Jen; Lin, Der-Yuh; Lin, Chia-Feng; Hong, Bo-Syun; Chen, Hone-Zern

2018-04-01

In this study, a large-area molybdenum disulfide (MoS2) thin film was obtained by low pressure thermal sulfurization. Raman scattering spectrum shows that the peaks at 374 and 403 cm‑1 are from the MoS2 thin film. XRD result reveals peaks at 33 and 58.5° indicating MoS2(100) and (110) crystal planes. By using gold (Au), silver (Ag), and aluminum (Al) as contact materials on the MoS2 thin film, photoresponsivity results indicate that Ag is a suitable material for obtaining a high responsivity for a high-performance photodetector (PD). Photocurrent mapping measurements also reveal that Ag contacts have the best carrier transport characteristic with carrier diffusion length of 101 µm among these contacts. Furthermore, we investigated metal–semiconductor–metal MoS2 thin film PDs with interdigitated fingers of 300, 400, 500, and 600 µm contact widths, which showed that the large contact widths could produce a high photoresponse for PD application owing to low resistance.

Study on thin wideband applicator for detecting blood characteristics in human body

NASA Astrophysics Data System (ADS)

Bamba, Kazuki; Kuki, Takao; Nikawa, Yoshio

2016-11-01

Preventive care as well as early detection method and monitoring technique for diseases are highly attracted attention to increase quality of life. Noninvasive measurement method for blood characteristics in body is expected by patients with kidney dysfunction. Complex permittivity of blood is changed a few present at 6GHz. This change is caused by the change of water and albumin contents in blood. In this study, to detect blood characteristics in human body, experiments with phantom model has been performed using thin wideband applicator for examining microwave transmission up to 6GHz. The thin wideband applicator has advantages for detecting living body information in detail. The thin wideband applicator is designed based on Antipodal Vivaldi Antenna and is not required any balun and is very easy handling. Using developed Antipodal Vivaldi Antenna, transmission coefficient can be obtained as a function of thickness of phantom model with high sensitivity. Using this method, highly sensitive sensor for obtaining characteristics of blood in body can be developed.

Superconducting thin-film gyroscope readout for Gravity Probe-B

NASA Technical Reports Server (NTRS)

Lockhart, James M.; Cheung, W. Stephen; Gill, Dale K.

1987-01-01

The high-resolution gyroscope readout system for the Stanford Gravity Probe-B experiment, whose purpose is to measure two general relativistic precessions of gyroscopes in earth orbit, is described. In order to achieve the required resolution in angle (0.001 arcsec), the readout system combines high-precision mechanical fabrication and measurement techniques with superconducting thin-film technology, ultralow magnetic fields, and SQUID detectors. The system design, performance limits achievable with current technology, and the results of fabrication and laboratory testing to date are discussed.

Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits

NASA Astrophysics Data System (ADS)

Gundlach, D. J.; Royer, J. E.; Park, S. K.; Subramanian, S.; Jurchescu, O. D.; Hamadani, B. H.; Moad, A. J.; Kline, R. J.; Teague, L. C.; Kirillov, O.; Richter, C. A.; Kushmerick, J. G.; Richter, L. J.; Parkin, S. R.; Jackson, T. N.; Anthony, J. E.

2008-03-01

The use of organic materials presents a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. Commercialization of this technology requires reduction in manufacturing costs by exploiting inexpensive low-temperature deposition and patterning techniques, which typically lead to lower device performance. We report a low-cost approach to control the microstructure of solution-cast acene-based organic thin films through modification of interfacial chemistry. Chemically and selectively tailoring the source/drain contact interface is a novel route to initiating the crystallization of soluble organic semiconductors, leading to the growth on opposing contacts of crystalline films that extend into the transistor channel. This selective crystallization enables us to fabricate high-performance organic thin-film transistors and circuits, and to deterministically study the influence of the microstructure on the device characteristics. By connecting device fabrication to molecular design, we demonstrate that rapid film processing under ambient room conditions and high performance are not mutually exclusive.

High performance diamond-like carbon layers obtained by pulsed laser deposition for conductive electrode applications

NASA Astrophysics Data System (ADS)

Stock, F.; Antoni, F.; Le Normand, F.; Muller, D.; Abdesselam, M.; Boubiche, N.; Komissarov, I.

2017-09-01

For the future, one of the biggest challenge faced to the technologies of flat panel display and various optoelectronic and photovoltaic devices is to find an alternative to the use of transparent conducting oxides like ITO. In this new approach, the objective is to grow high conductive thin-layer graphene (TLG) on the top of diamond-like carbon (DLC) layers presenting high performance. DLC prepared by pulsed laser deposition (PLD) have attracted special interest due to a unique combination of their properties, close to those of monocrystalline diamond, like its transparency, hardness and chemical inertia, very low roughness, hydrogen-free and thus high thermal stability up to 1000 K. In our future work, we plane to explore the synthesis of conductive TLG on top of insulating DLC thin films. The feasibility and obtained performances of the multi-layered structure will be explored in great details in the short future to develop an alternative to ITO with comparable performance (conductivity of transparency). To select the best DLC candidate for this purpose, we focus this work on the physicochemical properties of the DLC thin films deposited by PLD from a pure graphite target at two wavelengths (193 and 248 nm) at various laser fluences. A surface graphenization process, as well as the required efficiency of the complete structure (TLG/DLC) will clearly be related to the DLC properties, especially to the initial sp3/sp2 hybridization ratio. Thus, an exhaustive description of the physicochemical properties of the DLC layers is a fundamental step in the research of comparable performance to ITO.

Resin additive improves performance of high-temperature hydrocarbon lubricants

NASA Technical Reports Server (NTRS)

Johnson, R. L.; Loomis, W. R.

1971-01-01

Paraffinic resins, in high temperature applications, improve strength of thin lubricant film in Hertzian contacts even though they do not increase bulk oil viscosity. Use of resin circumvents corrosivity and high volatility problems inherent with many chemical additives.

Fabrication of high-performance InGaZnOx thin film transistors based on control of oxidation using a low-temperature plasma

NASA Astrophysics Data System (ADS)

Takenaka, Kosuke; Endo, Masashi; Uchida, Giichiro; Setsuhara, Yuichi

2018-04-01

This work demonstrated the low-temperature control of the oxidation of Amorphous InGaZnOx (a-IGZO) films using inductively coupled plasma as a means of precisely tuning the properties of thin film transistors (TFTs) and as an alternative to post-deposition annealing at high temperatures. The effects of the plasma treatment of the as-deposited a-IGZO films were investigated by assessing the electrical properties of TFTs incorporating these films. A TFT fabricated using an a-IGZO film exposed to an Ar-H2-O2 plasma at substrate temperatures as low as 300 °C exhibited the best performance, with a field effect mobility as high as 42.2 cm2 V-1 s-1, a subthreshold gate voltage swing of 1.2 V decade-1, and a threshold voltage of 2.8 V. The improved transfer characteristics of TFTs fabricated with a-IGZO thin films treated using an Ar-H2-O2 plasma are attributed to the termination of oxygen vacancies around Ga and Zn atoms by OH radicals in the gas phase.

Performance study of double SOI image sensors

NASA Astrophysics Data System (ADS)

Miyoshi, T.; Arai, Y.; Fujita, Y.; Hamasaki, R.; Hara, K.; Ikegami, Y.; Kurachi, I.; Nishimura, R.; Ono, S.; Tauchi, K.; Tsuboyama, T.; Yamada, M.

2018-02-01

Double silicon-on-insulator (DSOI) sensors composed of two thin silicon layers and one thick silicon layer have been developed since 2011. The thick substrate consists of high resistivity silicon with p-n junctions while the thin layers are used as SOI-CMOS circuitry and as shielding to reduce the back-gate effect and crosstalk between the sensor and the circuitry. In 2014, a high-resolution integration-type pixel sensor, INTPIX8, was developed based on the DSOI concept. This device is fabricated using a Czochralski p-type (Cz-p) substrate in contrast to a single SOI (SSOI) device having a single thin silicon layer and a Float Zone p-type (FZ-p) substrate. In the present work, X-ray spectra of both DSOI and SSOI sensors were obtained using an Am-241 radiation source at four gain settings. The gain of the DSOI sensor was found to be approximately three times that of the SSOI device because the coupling capacitance is reduced by the DSOI structure. An X-ray imaging demonstration was also performed and high spatial resolution X-ray images were obtained.

Characterisation of LSO:Tb scintillator films for high resolution X-ray imaging applications

NASA Astrophysics Data System (ADS)

Cecilia, A.; Rack, A.; Douissard, P.-A.; Martin, T.; Dos Santos Rolo, T.; Vagovič, P.; Pelliccia, D.; Couchaud, M.; Dupré, K.; Baumbach, T.

2011-05-01

Within the framework of an FP6 project (SCINTAX)1The Project SCINTAX is funded by the European Community (STRP 033 427), . we developed a new thin film single crystal scintillator for high resolution X-ray imaging based on a layer of modified LSO (Lu2SiO5) grown by liquid phase epitaxy (LPE) on a dedicated substrate. In this work we present the characterisation of the scintillating LSO films in terms of optical and scintillation properties as well as spatial resolution performances. The obtained results are discussed and compared with the performances of the thin scintillating films commonly used in synchrotron-based micro-imaging applications.

Peg supported thermal insulation panel

DOEpatents

Nowobilski, Jeffert J.; Owens, William J.

1985-01-01

A thermal insulation panel which is lightweight, load bearing, accommodates thermal stress, and has excellent high temperature insulation capability comprising high performance insulation between thin metal walls supported by high density, high strength glass pegs made in compliance with specified conditions of time, temperature and pressure.

Inkjet printing of single-crystal films.

PubMed

Minemawari, Hiromi; Yamada, Toshikazu; Matsui, Hiroyuki; Tsutsumi, Jun'ya; Haas, Simon; Chiba, Ryosuke; Kumai, Reiji; Hasegawa, Tatsuo

2011-07-13

The use of single crystals has been fundamental to the development of semiconductor microelectronics and solid-state science. Whether based on inorganic or organic materials, the devices that show the highest performance rely on single-crystal interfaces, with their nearly perfect translational symmetry and exceptionally high chemical purity. Attention has recently been focused on developing simple ways of producing electronic devices by means of printing technologies. 'Printed electronics' is being explored for the manufacture of large-area and flexible electronic devices by the patterned application of functional inks containing soluble or dispersed semiconducting materials. However, because of the strong self-organizing tendency of the deposited materials, the production of semiconducting thin films of high crystallinity (indispensable for realizing high carrier mobility) may be incompatible with conventional printing processes. Here we develop a method that combines the technique of antisolvent crystallization with inkjet printing to produce organic semiconducting thin films of high crystallinity. Specifically, we show that mixing fine droplets of an antisolvent and a solution of an active semiconducting component within a confined area on an amorphous substrate can trigger the controlled formation of exceptionally uniform single-crystal or polycrystalline thin films that grow at the liquid-air interfaces. Using this approach, we have printed single crystals of the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C(8)-BTBT) (ref. 15), yielding thin-film transistors with average carrier mobilities as high as 16.4 cm(2) V(-1) s(-1). This printing technique constitutes a major step towards the use of high-performance single-crystal semiconductor devices for large-area and flexible electronics applications.

Super Nonlinear Electrodeposition-Diffusion-Controlled Thin-Film Selector.

PubMed

Ji, Xinglong; Song, Li; He, Wei; Huang, Kejie; Yan, Zhiyuan; Zhong, Shuai; Zhang, Yishu; Zhao, Rong

2018-03-28

Selector elements with high nonlinearity are an indispensable part in constructing high density, large-scale, 3D stackable emerging nonvolatile memory and neuromorphic network. Although significant efforts have been devoted to developing novel thin-film selectors, it remains a great challenge in achieving good switching performance in the selectors to satisfy the stringent electrical criteria of diverse memory elements. In this work, we utilized high-defect-density chalcogenide glass (Ge 2 Sb 2 Te 5 ) in conjunction with high mobility Ag element (Ag-GST) to achieve a super nonlinear selective switching. A novel electrodeposition-diffusion dynamic selector based on Ag-GST exhibits superior selecting performance including excellent nonlinearity (<5 mV/dev), ultra-low leakage (<10 fA), and bidirectional operation. With the solid microstructure evidence and dynamic analyses, we attributed the selective switching to the competition between the electrodeposition and diffusion of Ag atoms in the glassy GST matrix under electric field. A switching model is proposed, and the in-depth understanding of the selective switching mechanism offers an insight of switching dynamics for the electrodeposition-diffusion-controlled thin-film selector. This work opens a new direction of selector designs by combining high mobility elements and high-defect-density chalcogenide glasses, which can be extended to other materials with similar properties.

Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition.

PubMed

Sheng, Jiazhen; Lee, Hwan-Jae; Oh, Saeroonter; Park, Jin-Seong

2016-12-14

Amorphous indium zinc oxide (IZO) thin films were deposited at different temperatures, by atomic layer deposition (ALD) using [1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]indium (INCA-1) as the indium precursor, diethlzinc (DEZ) as the zinc precursor, and hydrogen peroxide (H 2 O 2 ) as the reactant. The ALD process of IZO deposition was carried by repeated supercycles, including one cycle of indium oxide (In 2 O 3 ) and one cycle of zinc oxide (ZnO). The IZO growth rate deviates from the sum of the respective In 2 O 3 and ZnO growth rates at ALD growth temperatures of 150, 175, and 200 °C. We propose growth temperature-dependent surface reactions during the In 2 O 3 cycle that correspond with the growth-rate results. Thin-film transistors (TFTs) were fabricated with the ALD-grown IZO thin films as the active layer. The amorphous IZO TFTs exhibited high mobility of 42.1 cm 2 V -1 s -1 and good positive bias temperature stress stability. Finally, flexible IZO TFT was successfully fabricated on a polyimide substrate without performance degradation, showing the great potential of ALD-grown TFTs for flexible display applications.

Transparent megahertz circuits from solution-processed composite thin films.

PubMed

Liu, Xingqiang; Wan, Da; Wu, Yun; Xiao, Xiangheng; Guo, Shishang; Jiang, Changzhong; Li, Jinchai; Chen, Tangsheng; Duan, Xiangfeng; Fan, Zhiyong; Liao, Lei

2016-04-21

Solution-processed amorphous oxide semiconductors have attracted considerable interest in large-area transparent electronics. However, due to its relative low carrier mobility (∼10 cm(2) V(-1) s(-1)), the demonstrated circuit performance has been limited to 800 kHz or less. Herein, we report solution-processed high-speed thin-film transistors (TFTs) and integrated circuits with an operation frequency beyond the megahertz region on 4 inch glass. The TFTs can be fabricated from an amorphous indium gallium zinc oxide/single-walled carbon nanotube (a-IGZO/SWNT) composite thin film with high yield and high carrier mobility of >70 cm(2) V(-1) s(-1). On-chip microwave measurements demonstrate that these TFTs can deliver an unprecedented operation frequency in solution-processed semiconductors, including an extrinsic cut-off frequency (f(T) = 102 MHz) and a maximum oscillation frequency (f(max) = 122 MHz). Ring oscillators further demonstrated an oscillation frequency of 4.13 MHz, for the first time, realizing megahertz circuit operation from solution-processed semiconductors. Our studies represent an important step toward high-speed solution-processed thin film electronics.

Thermoelectric Properties of Epitaxial β-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement

NASA Astrophysics Data System (ADS)

Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Okuhata, Ryo; Ishibe, Takafumi; Watanabe, Kentaro; Suzuki, Takeyuki; Fujita, Takeshi; Sawano, Kentarou; Nakamura, Yoshiaki

2017-05-01

We have investigated the intrinsic thermoelectric properties of epitaxial β-FeSi2 thin films and the impact of phosphorus (P) doping. Epitaxial β-FeSi2 thin films with single phase were grown on Si(111) substrates by two different techniques in an ultrahigh-vacuum molecular beam epitaxy (MBE) system: solid-phase epitaxy (SPE), where iron silicide films formed by codeposition of Fe and Si at room temperature were recrystallized by annealing at 530°C to form epitaxial β-FeSi2 thin films on Si(111) substrates, and MBE of β-FeSi2 thin films on epitaxial β-FeSi2 templates formed on Si(111) by reactive deposition epitaxy (RDE) at 530°C (RDE + MBE). Epitaxial SPE thin films based on codeposition had a flatter surface and more abrupt β-FeSi2/Si(111) interface than epitaxial RDE + MBE thin films. We investigated the intrinsic thermoelectric properties of the epitaxial β-FeSi2 thin films on Si(111), revealing lower thermal conductivity and higher electrical conductivity compared with bulk β-FeSi2. We also investigated the impact of doping on the Seebeck coefficient of bulk and thin-film β-FeSi2. A route to enhance the thermoelectric performance of β-FeSi2 is proposed, based on (1) fabrication of thin-film structures for high electrical conductivity and low thermal conductivity, and (2) proper choice of doping for high Seebeck coefficient.

Lignocellulose-derived thin stillage composition and efficient biological treatment with a high-rate hybrid anaerobic bioreactor system.

PubMed

Oosterkamp, Margreet J; Méndez-García, Celia; Kim, Chang-H; Bauer, Stefan; Ibáñez, Ana B; Zimmerman, Sabrina; Hong, Pei-Ying; Cann, Isaac K; Mackie, Roderick I

2016-01-01

This study aims to chemically characterize thin stillage derived from lignocellulosic biomass distillation residues in terms of organic strength, nutrient, and mineral content. The feasibility of performing anaerobic digestion on these stillages at mesophilic (40 °C) and thermophilic (55 °C) temperatures to produce methane was demonstrated. The microbial communities involved were further characterized. Energy and sugar cane stillage have a high chemical oxygen demand (COD of 43 and 30 g/L, respectively) and low pH (pH 4.3). Furthermore, the acetate concentration in sugar cane stillage was high (45 mM) but was not detected in energy cane stillage. There was also a high amount of lactate in both types of stillage (35-37 mM). The amount of sugars was 200 times higher in energy cane stillage compared to sugar cane stillage. Although there was a high concentration of sulfate (18 and 23 mM in sugar and energy cane stillage, respectively), both thin stillages were efficiently digested anaerobically with high COD removal under mesophilic and thermophilic temperature conditions and with an organic loading rate of 15-21 g COD/L/d. The methane production rate was 0.2 L/g COD, with a methane percentage of 60 and 64, and 92 and 94 % soluble COD removed, respectively, by the mesophilic and thermophilic reactors. Although both treatment processes were equally efficient, there were different microbial communities involved possibly arising from the differences in the composition of energy cane and sugar cane stillage. There was more acetic acid in sugar cane stillage which may have promoted the occurrence of aceticlastic methanogens to perform a direct conversion of acetate to methane in reactors treating sugar cane stillage. Results showed that thin stillage contains easily degradable compounds suitable for anaerobic digestion and that hybrid reactors can efficiently convert thin stillage to methane under mesophilic and thermophilic conditions. Furthermore, we found that optimal conditions for biological treatment of thin stillage were similar for both mesophilic and thermophilic reactors. Bar-coded pyrosequencing of the 16S rRNA gene identified different microbial communities in mesophilic and thermophilic reactors and these differences in the microbial communities could be linked to the composition of the thin stillage.

Effects of BOX engineering on analogue/RF and circuit performance of InGaAs-OI-Si MOSFET

NASA Astrophysics Data System (ADS)

Maity, Subir Kr.; Pandit, Soumya

2017-11-01

InGaAs is an attractive choice as alternate channel material in n-channel metal oxide semiconductor transistor for high-performance applications. However, electrostatic integrity of such device is poor. In this paper, we present a comprehensive technology computer-aided design simulation-based study of the effect of scaling the thickness of the buried oxide (BOX) region and varying the dielectric constant of BOX material on the electrostatic integrity, analogue/radio frequency (RF) performance and circuit performance of InGaAs-on-Insulator device. Device with thin BOX layer gives better drain-induced barrier lowering performance which enhances output resistance. The carrier mobility remains almost constant with thinning of BOX layer up to certain value. By lowering the dielectric constant of the BOX material, it is further possible to improve the analogue and RF performance. Effect of BOX thickness scaling and role of BOX dielectric material on gain-frequency response of common source amplifier is also studied. It is observed that frequency response of the amplifier improves for thin BOX and with low dielectric constant-based material.

Electron transporting water-gated thin film transistors

NASA Astrophysics Data System (ADS)

Al Naim, Abdullah; Grell, Martin

2012-10-01

We demonstrate an electron-transporting water-gated thin film transistor, using thermally converted precursor-route zinc-oxide (ZnO) intrinsic semiconductors with hexamethyldisilazene (HMDS) hydrophobic surface modification. Water gated HMDS-ZnO thin film transistors (TFT) display low threshold and high electron mobility. ZnO films constitute an attractive alternative to organic semiconductors for TFT transducers in sensor applications for waterborne analytes. Despite the use of an electrolyte as gate medium, the gate geometry (shape of gate electrode and distance between gate electrode and TFT channel) is relevant for optimum performance of water-gated TFTs.

Membrane thinning for efficient CO2 capture

PubMed Central

Selyanchyn, Roman; Fujikawa, Shigenori

2017-01-01

Abstract Enhancing the fluxes in gas separation membranes is required for utilizing the membranes on a mass scale for CO2 capture. Membrane thinning is one of the most promising approaches to achieve high fluxes. In addition, sophisticated molecular transport across membranes can boost gas separation performance. In this review, we attempt to summarize the current state of CO2 separation membranes, especially from the viewpoint of thinning the selective layers and the membrane itself. The gas permeation behavior of membranes with ultimate thicknesses and their future directions are discussed. PMID:29152016

High-performance ferroelectric and magnetoresistive materials for next-generation thermal detector arrays

NASA Astrophysics Data System (ADS)

Todd, Michael A.; Donohue, Paul P.; Watton, Rex; Williams, Dennis J.; Anthony, Carl J.; Blamire, Mark G.

2002-12-01

This paper discusses the potential thermal imaging performance achievable from thermal detector arrays and concludes that the current generation of thin-film ferroelectric and resistance bolometer based detector arrays are limited by the detector materials used. It is proposed that the next generation of large uncooled focal plane arrays will need to look towards higher performance detector materials - particularly if they aim to approach the fundamental performance limits and compete with cooled photon detector arrays. Two examples of bolometer thin-film materials are described that achieve high performance from operating around phase transitions. The material Lead Scandium Tantalate (PST) has a paraelectric-to-ferroelectric phase transition around room temperature and is used with an applied field in the dielectric bolometer mode for thermal imaging. PST films grown by sputtering and liquid-source CVD have shown merit figures for thermal imaging a factor of 2 to 3 times higher than PZT-based pyroelectric thin films. The material Lanthanum Calcium Manganite (LCMO) has a paramagnetic to ferromagnetic phase transition around -20oC. This paper describes recent measurements of TCR and 1/f noise in pulsed laser-deposited LCMO films on Neodymium Gallate substrates. These results show that LCMO not only has high TCR's - up to 30%/K - but also low 1/f excess noise, with bolometer merit figures at least an order of magnitude higher than Vanadium Oxide, making it ideal for the next generation of microbolometer arrays. These high performance properties come at the expense of processing complexities and novel device designs will need to be introduced to realize the potential of these materials in the next generation of thermal detectors.

Complementary Characterization of Cu(In,Ga)Se₂ Thin-Film Photovoltaic Cells Using Secondary Ion Mass Spectrometry, Auger Electron Spectroscopy, and Atom Probe Tomography.

PubMed

Jang, Yun Jung; Lee, Jihye; Jeong, Jeung-Hyun; Lee, Kang-Bong; Kim, Donghwan; Lee, Yeonhee

2018-05-01

To enhance the conversion performance of solar cells, a quantitative and depth-resolved elemental analysis of photovoltaic thin films is required. In this study, we determined the average concentration of the major elements (Cu, In, Ga, and Se) in fabricated Cu(In,Ga)Se2 (CIGS) thin films, using inductively coupled plasma atomic emission spectroscopy, X-ray fluorescence, and wavelengthdispersive electron probe microanalysis. Depth profiling results for CIGS thin films with different cell efficiencies were obtained using secondary ion mass spectrometry and Auger electron spectroscopy to compare the atomic concentrations. Atom probe tomography, a characterization technique with sub-nanometer resolution, was used to obtain three-dimensional elemental mapping and the compositional distribution at the grain boundaries (GBs). GBs are identified by Na increment accompanied by Cu depletion and In enrichment. Segregation of Na atoms along the GB had a beneficial effect on cell performance. Comparative analyses of different CIGS absorber layers using various analytical techniques provide us with understanding of the compositional distributions and structures of high efficiency CIGS thin films in solar cells.

Impact of bimetal electrodes on dielectric properties of TiO2 and Al-doped TiO2 films.

PubMed

Kim, Seong Keun; Han, Sora; Jeon, Woojin; Yoon, Jung Ho; Han, Jeong Hwan; Lee, Woongkyu; Hwang, Cheol Seong

2012-09-26

Rutile structured Al-doped TiO(2) (ATO) and TiO(2) films were grown on bimetal electrodes (thin Ru/thick TiN, Pt, and Ir) for high-performance capacitors. The work function of the top Ru layer decreased on TiN and increased on Pt and Ir when it was thinner than ~2 nm, suggesting that the lower metal within the electrodes influences the work function of the very thin Ru layer. The use of the lower electrode with a high work function for bottom electrode eventually improves the leakage current properties of the capacitor at a very thin Ru top layer (≤2 nm) because of the increased Schottky barrier height at the interface between the dielectric and the bottom electrode. The thin Ru layer was necessary to achieve the rutile structured ATO and TiO(2) dielectric films.

Junctionless Thin-Film Transistors Gated by an H₃PO₄-Incorporated Chitosan Proton Conductor.

PubMed

Liu, Huixuan; Xun, Damao

2018-04-01

We fabricated an H3PO4-incorporated chitosan proton conductor film that exhibited the electric double layer effect and showed a high specific capacitance of 4.42 μF/cm2. Transparent indium tin oxide thin-film transistors gated by H3PO4-incorporated chitosan films were fabricated by sputtering through a shadow mask. The operating voltage was as low as 1.2 V because of the high specific capacitance of the H3PO4-incorporated chitosan dielectrics. The junctionless transparent indium tin oxide thin film transistors exhibited good performance, including an estimated current on/off ratio and field-effect mobility of 1.2 × 106 and 6.63 cm2V-1s-1, respectively. These low-voltage thin-film electric-double-layer transistors gated by H3PO4-incorporated chitosan are promising for next generation battery-powered "see-through" portable sensors.

Hydrothermal synthesis of MnO2 thin film for supercapacitor application

NASA Astrophysics Data System (ADS)

Tarwate, Soni B.; Wahule, Swati S.; Gattu, Ketan P.; Ghule, Anil V.; Sharma, Ramphal

2018-05-01

MnO2 thin films were directly grown on stainless steel mesh via a facile hydrothermal method. The structural properties revealed the formation of delta MnO2. The capacitive performance of the as-obtained MnO2 electrode was evaluated by cyclic voltammetry (CV) and galvanostatic charge-discharge measurements. The synthesized electrode showed a high specific capacitance of 321 F g-1 at 5 A g-1. The excellent electrochemical performance identifies the MnO2 as a promising electrode material for next-generation energy storage devices.

Surface-restrained growth of vertically aligned carbon nanotube arrays with excellent thermal transport performance.

PubMed

Ping, Linquan; Hou, Peng-Xiang; Liu, Chang; Li, Jincheng; Zhao, Yang; Zhang, Feng; Ma, Chaoqun; Tai, Kaiping; Cong, Hongtao; Cheng, Hui-Ming

2017-06-22

A vertically aligned carbon nanotube (VACNT) array is a promising candidate for a high-performance thermal interface material in high-power microprocessors due to its excellent thermal transport property. However, its rough and entangled free tips always cause poor interfacial contact, which results in serious contact resistance dominating the total thermal resistance. Here, we employed a thin carbon cover to restrain the disorderly growth of the free tips of a VACNT array. As a result, all the free tips are seamlessly connected by this thin carbon cover and the top surface of the array is smoothed. This unique structure guarantees the participation of all the carbon nanotubes in the array in the heat transport. Consequently the VACNT array grown on a Cu substrate shows a record low thermal resistance of 0.8 mm 2 K W -1 including the two-sided contact resistances, which is 4 times lower than the best result previously reported. Remarkably, the VACNT array can be easily peeled away from the Cu substrate and act as a thermal pad with excellent flexibility, adhesive ability and heat transport capability. As a result the CNT array with a thin carbon cover shows great potential for use as a high-performance flexible thermal interface material.

InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties

NASA Astrophysics Data System (ADS)

Sang, Liwen; Liao, Meiyong; Koide, Yasuo; Sumiya, Masatomo

2015-03-01

InxGa1-xN, with the tunable direct bandgaps from ultraviolet to near infrared region, offers a promising candidate for the high-efficiency next-generation thin-film photovoltaic applications. Although the adoption of thick InGaN film as the active region is desirable to obtain efficient light absorption and carrier collection compared to InGaN/GaN quantum wells structure, the understanding on the effect from structural design is still unclear due to the poor-quality InGaN films with thickness and difficulty of p-type doping. In this paper, we comprehensively investigate the effects from film epitaxy, doping, and device structural design on the performances of the InGaN-based solar cells. The high-quality InGaN thick film is obtained on AlN/sapphire template, and p-In0.08Ga0.92N is achieved with a high hole concentration of more than 1018 cm-3. The dependence of the photovoltaic performances on different structures, such as active regions and p-type regions is analyzed with respect to the carrier transport mechanism in the dark and under illumination. The strategy of improving the p-i interface by using a super-thin AlN interlayer is provided, which successfully enhances the performance of the solar cells.

Pilot-scale electron cyclotron resonance-metal organic chemical vapor deposition system for the preparation of large-area fluorine-doped SnO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeon, Bup Ju; Hudaya, Chairul; Center for Energy Convergence, Green City Research Institute, Korea Institute of Science and Technology, Hwarangno 14 gil 5, Seoul 136-791

2016-05-15

The authors report the surface morphology, optical, electrical, thermal and humidity impacts, and electromagnetic interference properties of fluorine-doped tin oxide (SnO{sub 2}:F or “FTO”) thin films on a flexible polyethylene terephthalate (PET) substrate fabricated by a pilot-scale electron cyclotron resonance–metal organic chemical vapor deposition (PS ECR-MOCVD). The characteristics of large area FTO thin films were compared with a commercially available transparent conductive electrode made of tin-doped indium oxide (ITO), prepared with an identical film and PET thickness of 125 nm and 188 μm, respectively. The results revealed that the as-prepared FTO thin films exhibited comparable performances with the incumbent ITO films, includingmore » a high optical transmittance of 97% (substrate-subtracted), low electrical resistivity of about 5 × 10{sup −3} Ω cm, improved electrical and optical performances due to the external thermal and humidity impact, and an excellent shielding effectiveness of electromagnetic interference of nearly 2.3 dB. These excellent performances of the FTO thin films were strongly attributed to the design of the PS ECR-MOCVD, which enabled a uniform plasma environment resulting from a proper mixture of electromagnetic profiles and microwave power.« less

Low-temperature technique of thin silicon ion implanted epitaxial detectors

NASA Astrophysics Data System (ADS)

Kordyasz, A. J.; Le Neindre, N.; Parlog, M.; Casini, G.; Bougault, R.; Poggi, G.; Bednarek, A.; Kowalczyk, M.; Lopez, O.; Merrer, Y.; Vient, E.; Frankland, J. D.; Bonnet, E.; Chbihi, A.; Gruyer, D.; Borderie, B.; Ademard, G.; Edelbruck, P.; Rivet, M. F.; Salomon, F.; Bini, M.; Valdré, S.; Scarlini, E.; Pasquali, G.; Pastore, G.; Piantelli, S.; Stefanini, A.; Olmi, A.; Barlini, S.; Boiano, A.; Rosato, E.; Meoli, A.; Ordine, A.; Spadaccini, G.; Tortone, G.; Vigilante, M.; Vanzanella, E.; Bruno, M.; Serra, S.; Morelli, L.; Guerzoni, M.; Alba, R.; Santonocito, D.; Maiolino, C.; Cinausero, M.; Gramegna, F.; Marchi, T.; Kozik, T.; Kulig, P.; Twaróg, T.; Sosin, Z.; Gaşior, K.; Grzeszczuk, A.; Zipper, W.; Sarnecki, J.; Lipiński, D.; Wodzińska, H.; Brzozowski, A.; Teodorczyk, M.; Gajewski, M.; Zagojski, A.; Krzyżak, K.; Tarasiuk, K. J.; Khabanowa, Z.; Kordyasz, Ł.

2015-02-01

A new technique of large-area thin ion implanted silicon detectors has been developed within the R&D performed by the FAZIA Collaboration. The essence of the technique is the application of a low-temperature baking process instead of high-temperature annealing. This thermal treatment is performed after B+ ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from 241Am (< E α > = 5.5 MeV). Preliminary tests on the first thin detector (area ≈ 20 × 20 mm2) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction 84Kr ( E = 35 A MeV) + 112Sn. The ΔE - E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2 A MeV depending on the ion charge.

Guidelines on design and construction of high performance thin HMA overlays.

DOT National Transportation Integrated Search

2016-08-01

Key Components of Mix Design and Material Properties: : High-quality aggregate - SAC A for high : volume roads : - PG 70 or 76 (Polymer Modified binders) : - RAP and RAS (shingles) not allowed : - Minimum binder content ( Over 6%) : - Pay for binder ...

Hopping conduction in zirconium oxynitrides thin film deposited by reactive magnetron sputtering

NASA Astrophysics Data System (ADS)

Guo, Jie; Zhan, Guanghui; Liu, Jingquan; Yang, Bin; Xu, Bin; Feng, Jie; Chen, Xiang; Yang, Chunsheng

2015-10-01

Zirconium oxynitrides thin film thermometers were demonstrated to be useful temperature sensors. However, the basic conduction mechanism of zirconium oxynitrides films has been a long-standing issue, which hinders the prediction and optimization of their ultimate performance. In this letter, zirconium oxynitrides films were grown on sapphire substrates by magnetron sputtering and their electric transport mechanism has been systemically investigated. It was found that in high temperatures region (>150 K) the electrical conductivity was dominated by thermal activation for all samples. In the low temperatures range, while Mott variable hopping conduction (VRH) was dominated the transport for films with relatively low resistance, a crossover from Mott VRH conduction to Efros-Shklovskii (ES) VRH was observed for films with relatively high resistance. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~7 meV). These results demonstrate the competing and tunable conduction mechanism in zirconium oxynitrides thin films, which would be helpful for optimizing the performance of zirconium oxynitrides thermometer.

Ultra-wide bandgap beta-Ga2O3 for deep-UV solar blind photodetectors(Conference Presentation)

NASA Astrophysics Data System (ADS)

Rafique, Subrina; Han, Lu; Zhao, Hongping

2017-03-01

Deep-ultraviolet (DUV) photodetectors based on wide bandgap (WB) semiconductor materials have attracted strong interest because of their broad applications in military surveillance, fire detection and ozone hole monitoring. Monoclinic β-Ga2O3 with ultra-wide bandgap of 4.9 eV is a promising candidate for such application because of its high optical transparency in UV and visible wavelength region, and excellent thermal and chemical stability at elevated temperatures. Synthesis of high qualityβ-Ga2O3 thin films is still at its early stage and knowledge on the origins of defects in this material is lacking. The conventional epitaxy methods used to grow β-Ga2O3 thin films such as molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) still face great challenges such as limited growth rate and relatively high defects levels. In this work, we present the growth of β-Ga2O3 thin films on c-plane (0001) sapphire substrate by our recently developed low pressure chemical vapor deposition (LPCVD) method. The β-Ga2O3 thin films synthesized using high purity metallic gallium and oxygen as the source precursors and argon as carrier gas show controllable N-type doping and high carrier mobility. Metal-semiconductor-metal (MSM) photodetectors (PDs) were fabricated on the as-grown β-Ga2O3 thin films. Au/Ti thin films deposited by e-beam evaporation served as the contact metals. Optimization of the thin film growth conditions and the effects of thermal annealing on the performance of the PDs were investigated. The responsivity of devices under 250 nm UV light irradiation as well as dark light will be characterized and compared.

Peg supported thermal insulation panel

DOEpatents

Nowobilski, J.J.; Owens, W.J.

1985-04-30

A thermal insulation panel which is lightweight, load bearing, accommodates thermal stress, and has excellent high temperature insulation capability comprises high performance insulation between thin metal walls supported by high density, high strength glass pegs made in compliance with specified conditions of time, temperature and pressure. 2 figs.

A validated high performance thin layer chromatography method for determination of yohimbine hydrochloride in pharmaceutical preparations

PubMed Central

Badr, Jihan M.

2013-01-01

Background: Yohimbine is an indole alkaloid used as a promising therapy for erectile dysfunction. A number of methods were reported for the analysis of yohimbine in the bark or in pharmaceutical preparations. Materials and Method: In the present work, a simple and sensitive high performance thin layer chromatographic method is developed for determination of yohimbine (occurring as yohimbine hydrochloride) in pharmaceutical preparations and validated according to International Conference of Harmonization (ICH) guidelines. The method employed thin layer chromatography aluminum sheets precoated with silica gel as the stationary phase and the mobile phase consisted of chloroform:methanol:ammonia (97:3:0.2), which gave compact bands of yohimbine hydrochloride. Results: Linear regression data for the calibration curves of standard yohimbine hydrochloride showed a good linear relationship over a concentration range of 80–1000 ng/spot with respect to the area and correlation coefficient (R2) was 0.9965. The method was evaluated regarding accuracy, precision, selectivity, and robustness. Limits of detection and quantitation were recorded as 5 and 40 ng/spot, respectively. The proposed method efficiently separated yohimbine hydrochloride from other components even in complex mixture containing powdered plants. The amount of yohimbine hydrochloride ranged from 2.3 to 5.2 mg/tablet or capsule in preparations containing the pure alkaloid, while it varied from zero (0) to 1.5–1.8 mg/capsule in dietary supplements containing powdered yohimbe bark. Conclusion: We concluded that this method employing high performance thin layer chromatography (HPTLC) in quantitative determination of yohimbine hydrochloride in pharmaceutical preparations is efficient, simple, accurate, and validated. PMID:23661986

A validated high performance thin layer chromatography method for determination of yohimbine hydrochloride in pharmaceutical preparations.

PubMed

Badr, Jihan M

2013-01-01

Yohimbine is an indole alkaloid used as a promising therapy for erectile dysfunction. A number of methods were reported for the analysis of yohimbine in the bark or in pharmaceutical preparations. In the present work, a simple and sensitive high performance thin layer chromatographic method is developed for determination of yohimbine (occurring as yohimbine hydrochloride) in pharmaceutical preparations and validated according to International Conference of Harmonization (ICH) guidelines. The method employed thin layer chromatography aluminum sheets precoated with silica gel as the stationary phase and the mobile phase consisted of chloroform:methanol:ammonia (97:3:0.2), which gave compact bands of yohimbine hydrochloride. Linear regression data for the calibration curves of standard yohimbine hydrochloride showed a good linear relationship over a concentration range of 80-1000 ng/spot with respect to the area and correlation coefficient (R(2)) was 0.9965. The method was evaluated regarding accuracy, precision, selectivity, and robustness. Limits of detection and quantitation were recorded as 5 and 40 ng/spot, respectively. The proposed method efficiently separated yohimbine hydrochloride from other components even in complex mixture containing powdered plants. The amount of yohimbine hydrochloride ranged from 2.3 to 5.2 mg/tablet or capsule in preparations containing the pure alkaloid, while it varied from zero (0) to 1.5-1.8 mg/capsule in dietary supplements containing powdered yohimbe bark. We concluded that this method employing high performance thin layer chromatography (HPTLC) in quantitative determination of yohimbine hydrochloride in pharmaceutical preparations is efficient, simple, accurate, and validated.

Exploration of CIGAS Alloy System for Thin-Film Photovoltaics on Novel Lightweight and Flexible Substrates

NASA Technical Reports Server (NTRS)

Woods, Lawrence M.; Kalla, Ajay; Ribelin, Rosine

2007-01-01

Thin-film photovoltaics (TFPV) on lightweight and flexible substrates offer the potential for very high solar array specific power (W/kg). ITN Energy Systems, Inc. (ITN) is developing flexible TFPV blanket technology that has potential for specific power greater than 2000 W/kg (including space coatings) that could result in solar array specific power between 150 and 500 W/kg, depending on array size, when mated with mechanical support structures specifically designed to take advantage of the lightweight and flexible substrates.(1) This level of specific power would far exceed the current state of the art for spacecraft PV power generation, and meet the needs for future spacecraft missions.(2) Furthermore the high specific power would also enable unmanned aircraft applications and balloon or high-altitude airship (HAA) applications, in addition to modular and quick deploying tents for surface assets or lunar base power, as a result of the high power density (W/sq m) and ability to be integrated into the balloon, HAA or tent fabric. ITN plans to achieve the high specific power by developing single-junction and two-terminal monolithic tandem-junction PV cells using thin-films of high-efficiency and radiation resistant CuInSe2 (CIS) partnered with bandgap-tunable CIS-alloys with Ga (CIGS) or Al (CIAS) on novel lightweight and flexible substrates. Of the various thin-film technologies, single-junction and radiation resistant CIS and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of TFPV device performance, with the best efficiency reaching 19.5% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys will achieve the highest levels of thin-film space and HAA solar array performance.

Ultra-smooth glassy graphene thin films for flexible transparent circuits

PubMed Central

Dai, Xiao; Wu, Jiang; Qian, Zhicheng; Wang, Haiyan; Jian, Jie; Cao, Yingjie; Rummeli, Mark H.; Yi, Qinghua; Liu, Huiyun; Zou, Guifu

2016-01-01

Large-area graphene thin films are prized in flexible and transparent devices. We report on a type of glassy graphene that is in an intermediate state between glassy carbon and graphene and that has high crystallinity but curly lattice planes. A polymer-assisted approach is introduced to grow an ultra-smooth (roughness, <0.7 nm) glassy graphene thin film at the inch scale. Owing to the advantages inherited by the glassy graphene thin film from graphene and glassy carbon, the glassy graphene thin film exhibits conductivity, transparency, and flexibility comparable to those of graphene, as well as glassy carbon–like mechanical and chemical stability. Moreover, glassy graphene–based circuits are fabricated using a laser direct writing approach. The circuits are transferred to flexible substrates and are shown to perform reliably. The glassy graphene thin film should stimulate the application of flexible transparent conductive materials in integrated circuits. PMID:28138535

Thin and small form factor cells : simulated behavior.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clews, Peggy Jane; Pluym, Tammy; Grubbs, Robert K.

Thin and small form factor cells have been researched lately by several research groups around the world due to possible lower assembly costs and reduced material consumption with higher efficiencies. Given the popularity of these devices, it is important to have detailed information about the behavior of these devices. Simulation of fabrication processes and device performance reveals some of the advantages and behavior of solar cells that are thin and small. Three main effects were studied: the effect of surface recombination on the optimum thickness, efficiency, and current density, the effect of contact distance on the efficiency for thin cells,more » and lastly the effect of surface recombination on the grams per Watt-peak. Results show that high efficiency can be obtained in thin devices if they are well-passivated and the distance between contacts is short. Furthermore, the ratio of grams per Watt-peak is greatly reduced as the device is thinned.« less

Room temperature ammonia gas sensing properties of MoS2 nanostructured thin film

NASA Astrophysics Data System (ADS)

Sharma, Shubham; Kumar, Arvind; Kaur, Davinder

2018-05-01

Here, we have fabricated the MoS2 nanostructure thin films on the Si (100) substrate using DC magnetron sputtering technique. The MoS2 thin film sensor shows the selective responses towards the ammonia gas (NH3) under low detection range 10-500 ppm. The sensor displays a significantly high sensing response (Rg/Ra ˜2.2) towards 100 ppm ammonia gas with a very fast response and recovery time of 22 sec and 30 sec respectively. Selectivity and stability investigations exhibit the excellent sensing properties of MoS2 thin film sensor. The working principle and sensing mechanism behind their remarkable performance was also investigated in detail.

Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases.

PubMed

Peng, Biaolin; Zhang, Qi; Li, Xing; Sun, Tieyu; Fan, Huiqing; Ke, Shanming; Ye, Mao; Wang, Yu; Lu, Wei; Niu, Hanben; Zeng, Xierong; Huang, Haitao

2015-06-24

A highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100) substrate by using a sol-gel method. A large recoverable energy storage density of 40.18 J/cm(3) along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range.

InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lye, Khe Shin; Kobayashi, Atsushi; Ueno, Kohei

Indium nitride (InN) is potentially suitable for the fabrication of high performance thin-film transistors (TFTs) because of its high electron mobility and peak electron velocity. However, InN is usually grown using a high temperature growth process, which is incompatible with large-area and lightweight TFT substrates. In this study, we report on the room temperature growth of InN films on flexible polyimide sheets using pulsed sputtering deposition. In addition, we report on the fabrication of InN-based TFTs on flexible polyimide sheets and the operation of these devices.

Impaired color naming of food and body shape words: weight phobia or distinct affective state?

PubMed

Green, M W; Elliman, N A; Rogers, P J; Welch, D A

1997-01-01

The current study investigated whether a concern with body shape and weight represents a distinct affective state, or whether it is better conceptualized as a highly specific form of anxiety. The color-naming performance of women with a high Drive for Thinness score was examined under three experimental conditions: when a photograph of chocolate was present, when actual chocolate was present, and a control condition. High Drive for Thinness subjects demonstrated relatively impaired color naming of body shape words in the picture condition, but not in the food or control conditions. Although there was a significant impairment in the color naming of food words, this was unaffected by condition or degree of Drive for Thinness. The results are interpreted as supporting an analogy between weight/body shape concerns and subclinical phobic anxiety.

Low-voltage high-performance organic thin film transistors with a thermally annealed polystyrene/hafnium oxide dielectric

NASA Astrophysics Data System (ADS)

Wang, Ying; Acton, Orb; Ting, Guy; Weidner, Tobias; Ma, Hong; Castner, David G.; Jen, Alex K.-Y.

2009-12-01

Low-voltage pentacene-based organic thin film transistors (OTFTs) are demonstrated with polystyrene (PS)/hafnium oxide (HfOx) hybrid dielectrics. Thermal annealing of PS films on HfOx at 120 °C (PS-120) induces a flatter orientation of the phenyl groups (tilt angle 65°) at the surface compared to PS films without annealing (PS-RT) (tilt angle 31°). The flatter phenyl group orientation leads to better matching of surface energy between pentacene and PS. Pentacene deposited on PS-120 display higher quality thin films with larger grain sizes and higher crystallinity. Pentacene OTFTs with PS-120/HfOx hybrid dielectrics can operate at low-voltage (<3 V) with high field-effect mobilities (1 cm2/V s), high on/off current ratios (106), and low subthreshold slopes (100 mV/dec).

Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices

PubMed Central

Bi, Lei; Hu, Juejun; Jiang, Peng; Kim, Hyun Suk; Kim, Dong Hun; Onbasli, Mehmet Cengiz; Dionne, Gerald F.; Ross, Caroline A.

2013-01-01

Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO2−δ, Co- or Fe-substituted SrTiO3−δ, as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti0.2Ga0.4Fe0.4)O3−δ and polycrystalline (CeY2)Fe5O12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY2)Fe5O12/silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates. PMID:28788379

Facile fabrication of large-grain CH 3NH 3PbI 3-xBr x films for high-efficiency solar cells via CH 3NH 3Br-selective Ostwald ripening

DOE PAGES

Yang, Mengjin; Zhang, Taiyang; Schulz, Philip; ...

2016-08-01

Organometallic halide perovskite solar cells (PSCs) have shown great promise as a low-cost, high-efficiency photovoltaic technology. Structural and electro-optical properties of the perovskite absorber layer are most critical to device operation characteristics. Here we present a facile fabrication of high-efficiency PSCs based on compact, large-grain, pinhole-free CH 3NH 3PbI 3-xBr x (MAPbI 3-xBr x) thin films with high reproducibility. A simple methylammonium bromide (MABr) treatment via spin-coating with a proper MABr concentration converts MAPbI 3 thin films with different initial film qualities (for example, grain size and pinholes) to high-quality MAPbI 3-xBr x thin films following an Ostwald ripening process,more » which is strongly affected by MABr concentration and is ineffective when replacing MABr with methylammonium iodide. A higher MABr concentration enhances I-Br anion exchange reaction, yielding poorer device performance. Lastly, this MABr-selective Ostwald ripening process improves cell efficiency but also enhances device stability and thus represents a simple, promising strategy for further improving PSC performance with higher reproducibility and reliability.« less

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

Carbon nanotube macroelectronics

NASA Astrophysics Data System (ADS)

Zhang, Jialu

In this dissertation, I discuss the application of carbon nanotubes in macroelectronis. Due to the extraordinary electrical properties such as high intrinsic carrier mobility and current-carrying capacity, single wall carbon nanotubes are very desirable for thin-film transistor (TFT) applications such as flat panel display, transparent electronics, as well as flexible and stretchable electronics. Compared with other popular channel material for TFTs, namely amorphous silicon, polycrystalline silicon and organic materials, nanotube thin-films have the advantages of low-temperature processing compatibility, transparency, and flexibility, as well as high device performance. In order to demonstrate scalable, practical carbon nanotube macroelectroncis, I have developed a platform to fabricate high-density, uniform separated nanotube based thin-film transistors. In addition, many other essential analysis as well as technology components, such as nanotube film density control, purity and diameter dependent semiconducting nanotube electrical performance study, air-stable n-type transistor fabrication, and CMOS integration platform have also been demonstrated. On the basis of the above achievement, I have further demonstrated various kinds of applications including AMOLED display electronics, PMOS and CMOS logic circuits, flexible and transparent electronics. The dissertation is structured as follows. First, chapter 1 gives a brief introduction to the electronic properties of carbon nanotubes, which serves as the background knowledge for the following chapters. In chapter 2, I will present our approach of fabricating wafer-scale uniform semiconducting carbon nanotube thin-film transistors and demonstrate their application in display electronics and logic circuits. Following that, more detailed information about carbon nanotube thin-film transistor based active matrix organic light-emitting diode (AMOLED) displays is discussed in chapter 3. And in chapter 4, a technology to fabricate air-stable n-type semiconducting nanotube thin-film transistor is developed and complementary metal--oxide--semiconductor (CMOS) logic circuits are demonstrated. Chapter 5 discusses the application of carbon nanotubes in transparent and flexible electronics. After that, in chapter 6, a simple and low cost nanotube separation method is introduced and the electrical performance of separated nanotubes with different diameter is studied. Finally, in chapter 7 a brief summary is drawn and some future research directions are proposed with preliminary results.

A stable solution-processed polymer semiconductor with record high-mobility for printed transistors

PubMed Central

Li, Jun; Zhao, Yan; Tan, Huei Shuan; Guo, Yunlong; Di, Chong-An; Yu, Gui; Liu, Yunqi; Lin, Ming; Lim, Suo Hon; Zhou, Yuhua; Su, Haibin; Ong, Beng S.

2012-01-01

Microelectronic circuits/arrays produced via high-speed printing instead of traditional photolithographic processes offer an appealing approach to creating the long-sought after, low-cost, large-area flexible electronics. Foremost among critical enablers to propel this paradigm shift in manufacturing is a stable, solution-processable, high-performance semiconductor for printing functionally capable thin-film transistors — fundamental building blocks of microelectronics. We report herein the processing and optimisation of solution-processable polymer semiconductors for thin-film transistors, demonstrating very high field-effect mobility, high on/off ratio, and excellent shelf-life and operating stabilities under ambient conditions. Exceptionally high-gain inverters and functional ring oscillator devices on flexible substrates have been demonstrated. This optimised polymer semiconductor represents a significant progress in semiconductor development, dispelling prevalent skepticism surrounding practical usability of organic semiconductors for high-performance microelectronic devices, opening up application opportunities hitherto functionally or economically inaccessible with silicon technologies, and providing an excellent structural framework for fundamental studies of charge transport in organic systems. PMID:23082244

Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishnaprasad, P. S., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Jayaraj, M. K., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Antony, Aldrin

2015-03-28

Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ω-2θ, Φ-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BSTmore » thin films show significantly improved tunable performance over polycrystalline thin films.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tan, Guoqiang; Bao, Wurigumula; Yuan, Yifei

To spread lithium ion batteries into large-scale energy storage technologies, high ener-gy/power densities and long cycling life of carbon-based anodes must be achieved. This re-quires revolutionary design of the anode’s architectures that can facilitate the fast electronic and ionic transport, as well as accommodate the electrode structural instability. Here we re-port a thin-film electrode design and demonstrate its use in flexible, and large-area carbon-based anode assemblies. The fabrication of electrodes is realized by sputtering a graphite tar-get in the high-purity nitrogen atmosphere, then highly-defect nitrogen-doped carbon nano-fibers are deposited vertically onto copper substrates with a thin film configuration. The high-ly-defectmore » nitrogen-doping enhances the lithium storage and transport, the orientation grown mechanism improves the charge transfer, and the compact configuration makes the high tap density possible. As a result, the thin films exhibit high specific capacities of ~ 500 mAh g-1, namely a volume capacity of ~ 100 mAh cm-3. They also exhibit stable cycle performance (400 mAh g-1 after 200 cycles) and good rate capability (450 mAh g-1 at 1 A g-1 rate). This work opens up a new carbon-based anode design by using sputtering technology for effec-tively incorporating high content nitrogen into carbon matrices. Such electrode architecture significantly improves the electrochemical performance of carbon-based materials.« less

Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.

PubMed

Lee, In-Kyu; Lee, Kwan Hyi; Lee, Seok; Cho, Won-Ju

2014-12-24

We used a microwave annealing process to fabricate a highly reliable biosensor using amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs), which usually experience threshold voltage instability. Compared with furnace-annealed a-IGZO TFTs, the microwave-annealed devices showed superior threshold voltage stability and performance, including a high field-effect mobility of 9.51 cm(2)/V·s, a low threshold voltage of 0.99 V, a good subthreshold slope of 135 mV/dec, and an outstanding on/off current ratio of 1.18 × 10(8). In conclusion, by using the microwave-annealed a-IGZO TFT as the transducer in an extended-gate ion-sensitive field-effect transistor biosensor, we developed a high-performance biosensor with excellent sensing properties in terms of pH sensitivity, reliability, and chemical stability.

Stretchable, Twisted Conductive Microtubules for Wearable Computing, Robotics, Electronics, and Healthcare.

PubMed

Do, Thanh Nho; Visell, Yon

2017-05-11

Stretchable and flexible multifunctional electronic components, including sensors and actuators, have received increasing attention in robotics, electronics, wearable, and healthcare applications. Despite advances, it has remained challenging to design analogs of many electronic components to be highly stretchable, to be efficient to fabricate, and to provide control over electronic performance. Here, we describe highly elastic sensors and interconnects formed from thin, twisted conductive microtubules. These devices consist of twisted assemblies of thin, highly stretchable (>400%) elastomer tubules filled with liquid conductor (eutectic gallium indium, EGaIn), and fabricated using a simple roller coating process. As we demonstrate, these devices can operate as multimodal sensors for strain, rotation, contact force, or contact location. We also show that, through twisting, it is possible to control their mechanical performance and electronic sensitivity. In extensive experiments, we have evaluated the capabilities of these devices, and have prototyped an array of applications in several domains of stretchable and wearable electronics. These devices provide a novel, low cost solution for high performance stretchable electronics with broad applications in industry, healthcare, and consumer electronics, to emerging product categories of high potential economic and societal significance.

Hierarchically structured Co₃O₄@Pt@MnO₂ nanowire arrays for high-performance supercapacitors.

PubMed

Xia, Hui; Zhu, Dongdong; Luo, Zhentao; Yu, Yue; Shi, Xiaoqin; Yuan, Guoliang; Xie, Jianping

2013-10-17

Here we proposed a novel architectural design of a ternary MnO2-based electrode - a hierarchical Co3O4@Pt@MnO2 core-shell-shell structure, where the complemental features of the three key components (a well-defined Co3O4 nanowire array on the conductive Ti substrate, an ultrathin layer of small Pt nanoparticles, and a thin layer of MnO2 nanoflakes) are strategically combined into a single entity to synergize and construct a high-performance electrode for supercapacitors. Owing to the high conductivity of the well-defined Co3O4 nanowire arrays, in which the conductivity was further enhanced by a thin metal (Pt) coating layer, in combination with the large surface area provided by the small MnO2 nanoflakes, the as-fabricated Co3O4@Pt@MnO2 nanowire arrays have exhibited high specific capacitances, good rate capability, and excellent cycling stability. The architectural design demonstrated in this study provides a new approach to fabricate high-performance MnO2-based nanowire arrays for constructing next-generation supercapacitors.

Hierarchically Structured Co3O4@Pt@MnO2 Nanowire Arrays for High-Performance Supercapacitors

NASA Astrophysics Data System (ADS)

Xia, Hui; Zhu, Dongdong; Luo, Zhentao; Yu, Yue; Shi, Xiaoqin; Yuan, Guoliang; Xie, Jianping

2013-10-01

Here we proposed a novel architectural design of a ternary MnO2-based electrode - a hierarchical Co3O4@Pt@MnO2 core-shell-shell structure, where the complemental features of the three key components (a well-defined Co3O4 nanowire array on the conductive Ti substrate, an ultrathin layer of small Pt nanoparticles, and a thin layer of MnO2 nanoflakes) are strategically combined into a single entity to synergize and construct a high-performance electrode for supercapacitors. Owing to the high conductivity of the well-defined Co3O4 nanowire arrays, in which the conductivity was further enhanced by a thin metal (Pt) coating layer, in combination with the large surface area provided by the small MnO2 nanoflakes, the as-fabricated Co3O4@Pt@MnO2 nanowire arrays have exhibited high specific capacitances, good rate capability, and excellent cycling stability. The architectural design demonstrated in this study provides a new approach to fabricate high-performance MnO2-based nanowire arrays for constructing next-generation supercapacitors.

Delta-Doped Back-Illuminated CMOS Imaging Arrays: Progress and Prospects

NASA Technical Reports Server (NTRS)

Hoenk, Michael E.; Jones, Todd J.; Dickie, Matthew R.; Greer, Frank; Cunningham, Thomas J.; Blazejewski, Edward; Nikzad, Shouleh

2009-01-01

In this paper, we report the latest results on our development of delta-doped, thinned, back-illuminated CMOS imaging arrays. As with charge-coupled devices, thinning and back-illumination are essential to the development of high performance CMOS imaging arrays. Problems with back surface passivation have emerged as critical to the prospects for incorporating CMOS imaging arrays into high performance scientific instruments, just as they did for CCDs over twenty years ago. In the early 1990's, JPL developed delta-doped CCDs, in which low temperature molecular beam epitaxy was used to form an ideal passivation layer on the silicon back surface. Comprising only a few nanometers of highly-doped epitaxial silicon, delta-doping achieves the stability and uniformity that are essential for high performance imaging and spectroscopy. Delta-doped CCDs were shown to have high, stable, and uniform quantum efficiency across the entire spectral range from the extreme ultraviolet through the near infrared. JPL has recently bump-bonded thinned, delta-doped CMOS imaging arrays to a CMOS readout, and demonstrated imaging. Delta-doped CMOS devices exhibit the high quantum efficiency that has become the standard for scientific-grade CCDs. Together with new circuit designs for low-noise readout currently under development, delta-doping expands the potential scientific applications of CMOS imaging arrays, and brings within reach important new capabilities, such as fast, high-sensitivity imaging with parallel readout and real-time signal processing. It remains to demonstrate manufacturability of delta-doped CMOS imaging arrays. To that end, JPL has acquired a new silicon MBE and ancillary equipment for delta-doping wafers up to 200mm in diameter, and is now developing processes for high-throughput, high yield delta-doping of fully-processed wafers with CCD and CMOS imaging devices.

Fabrication of high performance thin-film transistors via pressure-induced nucleation.

PubMed

Kang, Myung-Koo; Kim, Si Joon; Kim, Hyun Jae

2014-10-31

We report a method to improve the performance of polycrystalline Si (poly-Si) thin-film transistors (TFTs) via pressure-induced nucleation (PIN). During the PIN process, spatial variation in the local solidification temperature occurs because of a non-uniform pressure distribution during laser irradiation of the amorphous Si layer, which is capped with an SiO2 layer. This leads to a four-fold increase in the grain size of the poly-Si thin-films formed using the PIN process, compared with those formed using conventional excimer laser annealing. We find that thin films with optimal electrical properties can be achieved with a reduction in the number of laser irradiations from 20 to 6, as well as the preservation of the interface between the poly-Si and the SiO2 gate insulator. This interface preservation becomes possible to remove the cleaning process prior to gate insulator deposition, and we report devices with a field-effect mobility greater than 160 cm(2)/Vs.

The role of the domain size and titanium dopant in nanocrystalline hematite thin films for water photolysis

DOE PAGES

Yan, Danhua; Tao, Jing; Kisslinger, Kim; ...

2015-10-13

Here we develop a novel technique for preparing high quality Ti-doped hematite thin films for photoelectrochemical (PEC) water splitting, through sputtering deposition of metallic iron films from an iron target embedded with titanium (dopants) pellets, followed by a thermal oxidation step that turns the metal films into doped hematite. It is found that the hematite domain size can be tuned from ~10 nm to over 100 nm by adjusting the sputtering atmosphere from more oxidative to mostly inert. The better crystallinity at a larger domain size ensures excellent PEC water splitting performance, leading to record high photocurrent from pure planarmore » hematite thin films on FTO substrates. Titanium doping further enhances the PEC performance of hematite photoanodes. The photocurrent is improved by 50%, with a titanium dopant concentration as low as 0.5 atom%. As a result, it is also found that the role of the titanium dopant in improving the PEC performance is not apparently related to the films’ electrical conductivity which had been widely believed, but is more likely due to the passivation of surface defects by the titanium dopants.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawamura, Yumi; Hattori, Nozomu; Miyatake, Naomasa

Zinc oxide (ZnO) thin films have attracted significant attention for application in thin film transistors (TFTs) due to their specific characteristics, such as high mobility and transparency. In this paper, the authors fabricated TFTs with ZnO thin films as channel layers deposited by plasma-assisted atomic layer deposition (PAALD) at 100 Degree-Sign C using two different plasma sources, water (H{sub 2}O-plasma) and oxygen gas (O{sub 2}-plasma), as oxidants, and investigated the effects of the plasma sources on TFT performances. The TFT with ZnO channel layer deposited with H{sub 2}O-plasma indicated higher performances such as a field effect mobility ({mu}) of 1.1more » cm{sup 2}/Vs. Analysis of the ZnO films revealed that the residual carbon in the film deposited with H{sub 2}O-plasma was lower than that of O{sub 2}-plasma. In addition, the c-axis preferred orientation was obtained in the case of the ZnO film deposited with H{sub 2}O-plasma. These results suggest that it is possible to fabricate high-performance ZnO TFTs at low temperatures by PAALD with H{sub 2}O-plasma.« less

A flexible, gigahertz, and free-standing thin film piezoelectric MEMS resonator with high figure of merit

NASA Astrophysics Data System (ADS)

Jiang, Yuan; Zhang, Menglun; Duan, Xuexin; Zhang, Hao; Pang, Wei

2017-07-01

In this paper, a 2.6 GHz air-gap type thin film piezoelectric MEMS resonator was fabricated on a flexible polyethylene terephthalate film. A fabrication process combining transfer printing and hot-embossing was adopted to form a free-standing structure. The flexible radio frequency MEMS resonator possesses a quality factor of 946 and an effective coupling coefficient of 5.10%, and retains its high performance at a substrate bending radius of 1 cm. The achieved performance is comparable to that of conventional resonators on rigid silicon wafers. Our demonstration provides a viable approach to realizing universal MEMS devices on flexible polymer substrates, which is of great significance for building future fully integrated and multi-functional wireless flexible electronic systems.

Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications

PubMed Central

Socratous, Josephine; Banger, Kulbinder K; Vaynzof, Yana; Sadhanala, Aditya; Brown, Adam D; Sepe, Alessandro; Steiner, Ullrich; Sirringhaus, Henning

2015-01-01

The electronic structure of low temperature, solution-processed indium–zinc oxide thin-film transistors is complex and remains insufficiently understood. As commonly observed, high device performance with mobility >1 cm2 V−1 s−1 is achievable after annealing in air above typically 250 °C but performance decreases rapidly when annealing temperatures ≤200 °C are used. Here, the electronic structure of low temperature, solution-processed oxide thin films as a function of annealing temperature and environment using a combination of X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and photothermal deflection spectroscopy is investigated. The drop-off in performance at temperatures ≤200 °C to incomplete conversion of metal hydroxide species into the fully coordinated oxide is attributed. The effect of an additional vacuum annealing step, which is beneficial if performed for short times at low temperatures, but leads to catastrophic device failure if performed at too high temperatures or for too long is also investigated. Evidence is found that during vacuum annealing, the workfunction increases and a large concentration of sub-bandgap defect states (re)appears. These results demonstrate that good devices can only be achieved in low temperature, solution-processed oxides if a significant concentration of acceptor states below the conduction band minimum is compensated or passivated by shallow hydrogen and oxygen vacancy-induced donor levels. PMID:26190964

Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications.

PubMed

Socratous, Josephine; Banger, Kulbinder K; Vaynzof, Yana; Sadhanala, Aditya; Brown, Adam D; Sepe, Alessandro; Steiner, Ullrich; Sirringhaus, Henning

2015-03-25

The electronic structure of low temperature, solution-processed indium-zinc oxide thin-film transistors is complex and remains insufficiently understood. As commonly observed, high device performance with mobility >1 cm 2 V -1 s -1 is achievable after annealing in air above typically 250 °C but performance decreases rapidly when annealing temperatures ≤200 °C are used. Here, the electronic structure of low temperature, solution-processed oxide thin films as a function of annealing temperature and environment using a combination of X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and photothermal deflection spectroscopy is investigated. The drop-off in performance at temperatures ≤200 °C to incomplete conversion of metal hydroxide species into the fully coordinated oxide is attributed. The effect of an additional vacuum annealing step, which is beneficial if performed for short times at low temperatures, but leads to catastrophic device failure if performed at too high temperatures or for too long is also investigated. Evidence is found that during vacuum annealing, the workfunction increases and a large concentration of sub-bandgap defect states (re)appears. These results demonstrate that good devices can only be achieved in low temperature, solution-processed oxides if a significant concentration of acceptor states below the conduction band minimum is compensated or passivated by shallow hydrogen and oxygen vacancy-induced donor levels.

High-performance formamidinium-based perovskite solar cells via microstructure-mediated δ-to-α phase transformation

DOE PAGES

Liu, Tanghao; Zong, Yingxia; Zhou, Yuanyuan; ...

2017-03-14

The δ → α phase transformation is a crucial step in the solution-growth process of formamidinium-based lead triiodide (FAPbI 3) hybrid organic–inorganic perovskite (HOIP) thin films for perovskite solar cells (PSCs). Because the addition of cesium (Cs) stabilizes the α phase of FAPbI 3-based HOIPs, here our research focuses on FAPbI 3(Cs) thin films. We show that having a large grain size in the δ-FAPbI 3(Cs) non-perovskite intermediate films is essential for the growth of high-quality α-FAPbI 3(Cs) HOIP thin films. Here grain coarsening and phase transformation occur simultaneously during the thermal annealing step. A large starting grain size inmore » the δ-FAPbI 3(Cs) thin films suppresses grain coarsening, precluding the formation of voids at the final α-FAPbI 3(Cs)–substrate interfaces. PSCs based on the interface void-free α-FAPbI 3(Cs) HOIP thin films are much more efficient and stable in the ambient atmosphere. This interesting finding inspired us to develop a simple room-temperature aging method for preparing coarse-grained δ-FAPbI 3(Cs) intermediate films, which are subsequently converted to coarse-grained, high-quality α-FAPbI 3(Cs) HOIP thin films. As a result, this study highlights the importance of microstructure meditation in the processing of formamidinium-based PSCs.« less

Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells

PubMed Central

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-01

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping. PMID:28336851

Nano-photonic structures for light trapping in ultra-thin crystalline silicon solar cells

DOE PAGES

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-13

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a densemore » mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. Furthermore, this architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.« less

Nano-photonic structures for light trapping in ultra-thin crystalline silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pathi, Prathap; Peer, Akshit; Biswas, Rana

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a densemore » mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. Furthermore, this architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.« less

Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells.

PubMed

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-13

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%-2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm² photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.

Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers.

PubMed

Fahad, Hossain M; Gupta, Niharika; Han, Rui; Desai, Sujay B; Javey, Ali

2018-03-27

There is an increasing demand for mass-producible, low-power gas sensors in a wide variety of industrial and consumer applications. Here, we report chemical-sensitive field-effect-transistors (CS-FETs) based on bulk silicon wafers, wherein an electrostatically confined sub-5 nm thin charge inversion layer is modulated by chemical exposure to achieve a high-sensitivity gas-sensing platform. Using hydrogen sensing as a "litmus" test, we demonstrate large sensor responses (>1000%) to 0.5% H 2 gas, with fast response (<60 s) and recovery times (<120 s) at room temperature and low power (<50 μW). On the basis of these performance metrics as well as standardized benchmarking, we show that bulk silicon CS-FETs offer similar or better sensing performance compared to emerging nanostructures semiconductors while providing a highly scalable and manufacturable platform.

Optical Properties and Electrochemical Performance of LiFePO4 Thin Films Deposited on Transparent Current Collectors.

PubMed

Lee, HyunSeok; Yim, Haena; Kim, Kwang-Bum; Choi, Ji-Won

2015-11-01

LiFePO4 thin film cathodes are deposited on various transparent conducting oxide thin films on glass, which are used as cathode current collectors. The XRD patterns show that the thin films have the phase of LiFePO4 with an ordered olivine structure indexed to the orthorhombic Pmna space group. LiFePO4 thin film deposited on various TCO glass substrates exhibits transmittance of about 53%. The initial specific discharge capacities of LiFePO4 thin films are 25.0 μAh/cm2 x μm on FTO, 33.0 μAh/cm2 x μm on ITO, and 13.0 μAh/cm2 x μm on AZO coated glass substrates. Interestingly, the retention capacities of LiFePO4 thin films are 76.0% on FTO, 31.2% on ITO, and 37.7% on AZO coated glass substrates at 20th cycle. The initial specific discharge capacity of the LiFePO4/FTO electrode is slightly lower, but the discharge capacities of the LiFePO4/FTO electrode relatively decrease less than those of the others such as LiFePO4/ITO and LiFePO4/AZO with cycling. The results reported here provide the high transparency of LiFePO4 thin films cathode materials and the good candidate as FTO current collector of the LiFePO4 thin film cathode of transparent thin film rechargeable batteries due to its high transparency and cyclic retention.

Processing and Characterization of Thin Cadmium Telluride Solar Cells

NASA Astrophysics Data System (ADS)

Wojtowicz, Anna

Cadmium telluride (CdTe) has the highest theoretical limit to conversion efficiency of single-junction photovoltaic (PV) technologies today. However, despite a maximum theoretical open-circuit voltage of 1.20 V, record devices have historically had voltages pinned around only 900 mV. Voltage losses due to high recombination rates remains to be the most complex hurdle to CdTe technology today, and the subject of on-going research in the physics PV group at Colorado State University. In this work, an ultrathin CdTe device architecture is proposed in an effort to reduce bulk recombination and boost voltages. By thinning the CdTe layer, a device's internal electric field extends fully towards the back contact. This quickly separates electrons-hole pairs throughout the bulk of the device and reduces overall recombination. Despite this advantage, very thin CdTe layers also present a unique set of optical and electrical challenges which result in performance losses not as prevalent in thicker devices. When fabricating CdTe solar cells, post-deposition treatments applied to the absorber layer are a critical step for achieving high efficiency devices. Exposure of the polycrystalline CdTe film to a chlorine species encourages the passivation of dangling bonds and larger grain formation, while copper-doping improves device uniformity and voltages. This work focuses on experiments conducted via close-space sublimation to optimize CdCl2 and CuCl treatments for thin CdTe solar cells. Sweeps of both exposure and anneal time were performed for both post-deposition treatments on CdTe devices with 1.0 mum absorber layers. The results demonstrate that thin CdTe devices require substantially less post-deposition processing than standard thicker devices as expected. Additionally, the effects of CdTe growth temperature on thin devices is briefly investigated. The results suggest that higher growth temperatures lead to both electrical and stoichiometric changes in CdTe closely associated with lower carrier lifetimes and poorer overall performance.

Burning Graphene Layer-by-Layer

PubMed Central

Ermakov, Victor A.; Alaferdov, Andrei V.; Vaz, Alfredo R.; Perim, Eric; Autreto, Pedro A. S.; Paupitz, Ricardo; Galvao, Douglas S.; Moshkalev, Stanislav A.

2015-01-01

Graphene, in single layer or multi-layer forms, holds great promise for future electronics and high-temperature applications. Resistance to oxidation, an important property for high-temperature applications, has not yet been extensively investigated. Controlled thinning of multi-layer graphene (MLG), e.g., by plasma or laser processing is another challenge, since the existing methods produce non-uniform thinning or introduce undesirable defects in the basal plane. We report here that heating to extremely high temperatures (exceeding 2000 K) and controllable layer-by-layer burning (thinning) can be achieved by low-power laser processing of suspended high-quality MLG in air in “cold-wall” reactor configuration. In contrast, localized laser heating of supported samples results in non-uniform graphene burning at much higher rates. Fully atomistic molecular dynamics simulations were also performed to reveal details of oxidation mechanisms leading to uniform layer-by-layer graphene gasification. The extraordinary resistance of MLG to oxidation paves the way to novel high-temperature applications as continuum light source or scaffolding material. PMID:26100466

Perovskite-sensitized solar cells-based Ga-TiO2 nanodiatom-like photoanode: the improvement of performance by perovskite crystallinity refinement

NASA Astrophysics Data System (ADS)

Umar, Akrajas Ali; Al-She'irey, Altaf Yahya Ahmed; Rahman, Mohd Yusri Abd; Salleh, Muhamad Mat; Oyama, Munetaka

2018-05-01

The structure and crystallinity of the photoactive materials in solar cell determines the exciton formation, carrier's recombination, life-time and transportation in the devices. Here, we report that enhanced charge transportation, internal quantum efficiency and the carrier life-time can be achieved by modifying the structure, morphology of the organic perovskite thin film, enabling the improvement of the solar cell performance. The thin film structure modification was achieved via a thermal annealing in vacuum. In typical procedure, the power conversion efficiency of the PSC device can be upgraded from 0.5 to 2.9%, which is approximately 6 times increment, when the surface structure disorders are limited in the organic perovskite thin film. By optimizing the organic perovskite loading on the Ga-TiO2 diatom-like nanostructures photoanode and combining with a fine control of organic perovskite thin film structure, power conversion efficiency as high as 6.58% can be generated from the device. Electrochemical impedance spectroscopy and current-voltage analysis in the dark indicated that this process has effectively augmented the carrier life-time and limited the carrier recombination, enhancing the overall performance of the solar cell device. The preparation process and mechanism of the device performance improvement will be discussed.

Influence of deep defects on device performance of thin-film polycrystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Fehr, M.; Simon, P.; Sontheimer, T.; Leendertz, C.; Gorka, B.; Schnegg, A.; Rech, B.; Lips, K.

2012-09-01

Employing quantitative electron-paramagnetic resonance analysis and numerical simulations, we investigate the performance of thin-film polycrystalline silicon solar cells as a function of defect density. We find that the open-circuit voltage is correlated to the density of defects, which we assign to coordination defects at grain boundaries and in dislocation cores. Numerical device simulations confirm the observed correlation and indicate that the device performance is limited by deep defects in the absorber bulk. Analyzing the defect density as a function of grain size indicates a high concentration of intra-grain defects. For large grains (>2 μm), we find that intra-grain defects dominate over grain boundary defects and limit the solar cell performance.

A sextuple-band ultra-thin metamaterial absorber with perfect absorption

NASA Astrophysics Data System (ADS)

Yu, Dingwang; Liu, Peiguo; Dong, Yanfei; Zhou, Dongming; Zhou, Qihui

2017-08-01

This paper presents the design, simulation and measurement of a sextuple-band ultra-thin metamaterial absorber (MA). The unit cell of this proposed structure is composed of triangular spiral-shaped complementary structures imprinted on the dielectric substrate backed by a metal ground. The measured results are in good agreement with simulations with high absorptivities of more than 90% at all six absorption frequencies. In addition, this proposed absorber has good performances of ultra-thin, polarization insensitivity and a wide-angle oblique incidence, which can easily be used in many potential applications such as detection, imaging and sensing.

Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

PubMed Central

Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

2016-01-01

Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm2 V−1 sec−1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 104), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process. PMID:27184121

Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

NASA Astrophysics Data System (ADS)

Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

2016-05-01

Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm2 V-1 sec-1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 104), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process.

Exploring aligned-carbon-nanotubes@polyaniline arrays on household Al as supercapacitors.

PubMed

Huang, Fan; Lou, Fengliu; Chen, De

2012-05-01

Herein, we demonstrate a new approach towards the construction of supercapacitors consisting of carbon nanotubes (CNTs) and conducting polymers (ECPs) with high specific power, high specific energy, and stable cycling performance through a 3D design of a thin film of polyaniline (PANI) on an aligned small carbon nanotube (ACNT) array on household Al foils. The thin-film strategy is used to fully exploit the specific capacitance of PANI, and obtain regular pores, strong interaction between PANI and CNTs, and reduced electrical resistance for the electrodes. A facile process is developed to fabricate a highly flexible supercapacitor using this binder-free composite on household Al foil as the current collector. It exhibits high specific energy of 18.9 Wh kg(-1) , high maximum specific power of 11.3 kW kg(-1) of the active material in an aqueous electrolyte at 1.0 A g(-1) , and excellent rate performance and cycling stability. A high specific energy of 72.4 Wh kg(-1) , a high maximum specific power of 24.9 kW kg(-1) , and a good cycling performance of the active material are obtained in an organic electrolyte. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-performance vertical organic transistors.

PubMed

Kleemann, Hans; Günther, Alrun A; Leo, Karl; Lüssem, Björn

2013-11-11

Vertical organic thin-film transistors (VOTFTs) are promising devices to overcome the transconductance and cut-off frequency restrictions of horizontal organic thin-film transistors. The basic physical mechanisms of VOTFT operation, however, are not well understood and VOTFTs often require complex patterning techniques using self-assembly processes which impedes a future large-area production. In this contribution, high-performance vertical organic transistors comprising pentacene for p-type operation and C60 for n-type operation are presented. The static current-voltage behavior as well as the fundamental scaling laws of such transistors are studied, disclosing a remarkable transistor operation with a behavior limited by injection of charge carriers. The transistors are manufactured by photolithography, in contrast to other VOTFT concepts using self-assembled source electrodes. Fluorinated photoresist and solvent compounds allow for photolithographical patterning directly and strongly onto the organic materials, simplifying the fabrication protocol and making VOTFTs a prospective candidate for future high-performance applications of organic transistors. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Bo; Nelson, Kevin; Lipinski, Ronald J.

Iridium alloys have superior strength and ductility at elevated temperatures, making them useful as structural materials for certain high-temperature applications. However, experimental data on their high-temperature high-strain-rate performance are needed for understanding high-speed impacts in severe elevated-temperature environments. Kolsky bars (also called split Hopkinson bars) have been extensively employed for high-strain-rate characterization of materials at room temperature, but it has been challenging to adapt them for the measurement of dynamic properties at high temperatures. Current high-temperature Kolsky compression bar techniques are not capable of obtaining satisfactory high-temperature high-strain-rate stress-strain response of thin iridium specimens investigated in this study. We analyzedmore » the difficulties encountered in high-temperature Kolsky compression bar testing of thin iridium alloy specimens. Appropriate modifications were made to the current high-temperature Kolsky compression bar technique to obtain reliable compressive stress-strain response of an iridium alloy at high strain rates (300 – 10000 s -1) and temperatures (750°C and 1030°C). Uncertainties in such high-temperature high-strain-rate experiments on thin iridium specimens were also analyzed. The compressive stress-strain response of the iridium alloy showed significant sensitivity to strain rate and temperature.« less

High performance bimorph piezoelectric MEMS harvester via bulk PZT thick films on thin beryllium-bronze substrate

NASA Astrophysics Data System (ADS)

Yi, Zhiran; Yang, Bin; Li, Guimiao; Liu, Jingquan; Chen, Xiang; Wang, Xiaolin; Yang, Chunsheng

2017-07-01

This letter presents a high performance bimorph piezoelectric MEMS harvester with bulk PZT thick films on both sides of a flexible thin beryllium-bronze substrate via bonding and thinning technologies. The upper and lower PZT layers are thinned down to about 53 μm and 76 μm, respectively, and a commercial beryllium bronze with the thickness of about 50 μm is used as the substrate. The effective volume of this device is 30.6 mm3. The harvester with a tungsten proof mass generated the close-circuit peak-to-peak voltage of 53.1 V, the output power of 0.979 mW, and the power density of 31.99 mW/cm3 with the matching load resistance of 360 kΩ at the applied acceleration amplitude of 3.5 g and the applied frequency of 77.2 Hz. Meanwhile, in order to evaluate the stability, the device was measured continuously under applied acceleration amplitudes of 1.0 g and 3.5 g for one hour and demonstrated a good stability. Then, the harvester was utilized to light up LEDs and about twenty-one serial LEDs were lighted up at resonance under an applied acceleration amplitude of 3.0 g.

Electrical properties of thin film transistors with zinc tin oxide channel layer

NASA Astrophysics Data System (ADS)

Hong, Seunghwan; Oh, Gyujin; Kim, Eun Kyu

2017-10-01

We have investigated thin film transistors (TFTs) with zinc tin oxide (ZTO) channel layer fabricated by using an ultra-high vacuum radio frequency sputter. ZTO thin films were grown at room temperature by co-sputtering of ZnO and SnO2, which applied power for SnO2 target was varied from 15 W to 90 W under a fixed sputtering power of 70 W for ZnO target. A post-annealing treatment to improve the film quality was done at temperature ranges from 300 to 600 °C by using the electrical furnace. The ZTO thin films showed good electrical and optical properties such as Hall mobility of more than 9 cm2/V·s, specific resistivity of about 2 × 102 Ω·cm, and optical transmittance of 85% in visible light region by optical bandgap of 3.3 eV. The ZTO-TFT with an excellent performance of channel mobility of 19.1 cm2/V·s and on-off ratio ( I on / I off ) of 104 was obtained from the films grown with SnO2 target power of 25 W and post-annealed at 450 °C. This result showed that ZTO film is promising on application to a high performance transparent TFTs.

Self-activated ultrahigh chemosensitivity of oxide thin film nanostructures for transparent sensors

PubMed Central

Moon, Hi Gyu; Shim, Young-Soek; Kim, Do Hong; Jeong, Hu Young; Jeong, Myoungho; Jung, Joo Young; Han, Seung Min; Kim, Jong Kyu; Kim, Jin-Sang; Park, Hyung-Ho; Lee, Jong-Heun; Tuller, Harry L.; Yoon, Seok-Jin; Jang, Ho Won

2012-01-01

One of the top design priorities for semiconductor chemical sensors is developing simple, low-cost, sensitive and reliable sensors to be built in handheld devices. However, the need to implement heating elements in sensor devices, and the resulting high power consumption, remains a major obstacle for the realization of miniaturized and integrated chemoresistive thin film sensors based on metal oxides. Here we demonstrate structurally simple but extremely efficient all oxide chemoresistive sensors with ~90% transmittance at visible wavelengths. Highly effective self-activation in anisotropically self-assembled nanocolumnar tungsten oxide thin films on glass substrate with indium-tin oxide electrodes enables ultrahigh response to nitrogen dioxide and volatile organic compounds with detection limits down to parts per trillion levels and power consumption less than 0.2 microwatts. Beyond the sensing performance, high transparency at visible wavelengths creates opportunities for their use in transparent electronic circuitry and optoelectronic devices with avenues for further functional convergence. PMID:22905319

High Performance Flexible Actuator of Urchin-Like ZnO Nanostructure/Polyvinylenefluoride Hybrid Thin Film with Graphene Electrodes for Acoustic Generator and Analyzer.

PubMed

Cheong, Oug Jae; Lee, James S; Kim, Jae Hyun; Jang, Jyongsik

2016-05-01

A bass frequency response enhanced flexible polyvinylidene fluoride (PVDF) based thin film acoustic actuator is successfully fabricated. High concentrations of various zinc oxide (ZnO) is embedded in PVDF matrix, enhancing the β phase content and the dielectric property of the composite thin film. ZnO acts as a nucleation agent for the crystallization of PVDF. A chemical vapor deposition grown graphene is used as electrodes, enabling high electron mobility for the distortion free acoustic signals. The frequency response of the fabricated acoustic actuator is studied as a function of the film thickness and filler content. The optimized film has a thickness of 80 μm with 30 wt% filler content and shows 72% and 42% frequency response enhancement in bass and midrange compared to the commercial PVDF, respectively. Also, the total harmonic distortion decreases to 82% and 74% in the bass and midrange regions, respectively. Furthermore, the composite film shows a promising potential for microphone applications. Most of all, it is demonstrated that acoustic actuator performance is strongly influenced by degree of PVDF crystalline. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tunable passively Q-switched erbium-doped fiber laser with Chitosan/MoS2 saturable absorber

NASA Astrophysics Data System (ADS)

Ahmad, H.; Aidit, S. N.; Ooi, S. I.; Tiu, Z. C.

2018-07-01

Chitosan, an organic polymer derived from the outer skeletons of crustacean and in the cell wall of fungi is explored as polymer host to develop thin film saturable absorber (SA). As a polymer, Chitosan shows high thermal stability as well as significant transmission characteristics. The highly transparent polymer serves as a good host for SA materials, and a composite Chitosan/MoS2 thin film is demonstrated to successfully generate stable Q-switched lasing output at operating wavelength of 1561.5 nm. At maximum pump power of 280.5 mW, the generated pulse exhibits maximum pulse repetition rate and pulse energy of 79.4 kHz and 43.69 nJ respectively as well as minimum pulse width of 1.02 μs. The overall efficiency of the laser cavity with the Chitosan/MoS2 thin film SA is approximately 0.93%. These results reflect the outstanding performance of Chitosan/MoS2 SA as compared to other MoS2 SA prepared using mechanical exfoliation and optical deposition technique. Moreover, the Chitosan polymer is shown to be a highly potential host in the SA fabrication process due to its promising performance which is comparable to PVA.

Superconducting Thin Films for the Enhancement of Superconducting Radio Frequency Accelerator Cavities

NASA Astrophysics Data System (ADS)

Burton, Matthew C.

Bulk niobium (Nb) superconducting radio frequency (SRF) cavities are currently the preferred method for acceleration of charged particles at accelerating facilities around the world. However, bulk Nb cavities have poor thermal conductance, impose material and design restrictions on other components of a particle accelerator, have low reproducibility and are approaching the fundamental material-dependent accelerating field limit of approximately 50MV/m. Since the SRF phenomena occurs at surfaces within a shallow depth of ˜1 microm, a proposed solution to this problem has been to utilize thin film technology to deposit superconducting thin films on the interior of cavities to engineer the active SRF surface in order to achieve cavities with enhanced properties and performance. Two proposed thin film applications for SRF cavities are: 1) Nb thin films coated on bulk cavities made of suitable castable metals (such as copper or aluminum) and 2) multilayer films designed to increase the accelerating gradient and performance of SRF cavities. While Nb thin films on copper (Cu) cavities have been attempted in the past using DC magnetron sputtering (DCMS), such cavities have never performed at the bulk Nb level. However, new energetic condensation techniques for film deposition, such as High Power Impulse Magnetron Sputtering (HiPIMS), offer the opportunity to create suitably thick Nb films with improved density, microstructure and adhesion compared to traditional DCMS. Clearly use of such novel technique requires fundamental studies to assess surface evolution and growth modes during deposition and resulting microstructure and surface morphology and the correlation with RF superconducting properties. Here we present detailed structure-property correlative research studies done on Nb/Cu thin films and NbN- and NbTiN-based multilayers made using HiPIMS and DCMS, respectively.

Exploration of photosensitive polyimide as the modification layer in thin film microcircuit

NASA Astrophysics Data System (ADS)

Liu, Lily; Song, Changbin; Xue, Bin; Li, Jing; Wang, Junxi; Li, Jinmin

2018-02-01

Positive type photosensitive polyimide is used as the modification layer in the thin film transistors production process. The photosensitive polyimide is not only used as the second insulating layer, it can also be used instead of a mask because of the photosensitivity. A suitable curing condition can help photosensitive polyimide form the high performance polyimide with orderly texture inside, and the performance of imidization depends on the precise control of temperature, time, and heat control during the curing process. Therefore, experiments of different stepped up heating tests are made, and the ability of protecting silicon dioxide is analyzed.

Direct glycerol fuel cell with polytetrafluoroethylene (PTFE) thin film separator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benipal, Neeva; Qi, Ji; Dalian Univ. of Technology, Dalian

Here, anion-exchange membrane-based direct glycerol fuel cells (AEM-DGFCs) can yield high power density, however challenges exist in developing chemically stable AEMs. Here, we demonstrate a porous PTFE thin film, a well-known chemical, electro-chemical, and thermal robust material that can serve as a separator between anode and cathode, thus achieving high DGFC’s performance. A simple aqueous-phase reduction method was used to prepare carbon nanotube supported PdAg nanoparticles (PdAg/CNT) with an average particle size of 2.9 nm. A DGFC using a PTFE thin film without any further modification with PdAg/CNT anode catalyst exhibits a peak power density of 214.7 mW cm –2more » at 80 °C, about 22.6% lower than a DGFC using a state-of-the-art AEM. We report a 5.8% decrease and 11.1% decrease in cell voltage for a PTFE thin film and AEM; similarly, the cell voltage degradation rate decreases from 1.2 to 0.8 mV h –1 for PTFE thin film, while for AEM, it decreases from 9.6 to 3.0 mV h –1 over an 80 h durability test period. Transmission electron microscopy results indicate that the average particle size of PdAg/CNT increases from 2.9 to 3.7 nm after 80 h discharge; this suggests that PdAg particle growth may be the main reason for the performance drop.« less

Direct glycerol fuel cell with polytetrafluoroethylene (PTFE) thin film separator

DOE PAGES

Benipal, Neeva; Qi, Ji; Dalian Univ. of Technology, Dalian; ...

2017-01-04

Here, anion-exchange membrane-based direct glycerol fuel cells (AEM-DGFCs) can yield high power density, however challenges exist in developing chemically stable AEMs. Here, we demonstrate a porous PTFE thin film, a well-known chemical, electro-chemical, and thermal robust material that can serve as a separator between anode and cathode, thus achieving high DGFC’s performance. A simple aqueous-phase reduction method was used to prepare carbon nanotube supported PdAg nanoparticles (PdAg/CNT) with an average particle size of 2.9 nm. A DGFC using a PTFE thin film without any further modification with PdAg/CNT anode catalyst exhibits a peak power density of 214.7 mW cm –2more » at 80 °C, about 22.6% lower than a DGFC using a state-of-the-art AEM. We report a 5.8% decrease and 11.1% decrease in cell voltage for a PTFE thin film and AEM; similarly, the cell voltage degradation rate decreases from 1.2 to 0.8 mV h –1 for PTFE thin film, while for AEM, it decreases from 9.6 to 3.0 mV h –1 over an 80 h durability test period. Transmission electron microscopy results indicate that the average particle size of PdAg/CNT increases from 2.9 to 3.7 nm after 80 h discharge; this suggests that PdAg particle growth may be the main reason for the performance drop.« less

On the role of ultra-thin oxide cathode synthesis on the functionality of micro-solid oxide fuel cells: Structure, stress engineering and in situ observation of fuel cell membranes during operation

NASA Astrophysics Data System (ADS)

Lai, Bo-Kuai; Kerman, Kian; Ramanathan, Shriram

Microstructure and stresses in dense La 0.6Sr 0.4Co 0.8Fe 0.2O 3 (LSCF) ultra-thin films have been investigated to increase the physical thickness of crack-free cathodes and active area of thermo-mechanically robust micro-solid oxide fuel cell (μSOFC) membranes. Processing protocols employ low deposition rates to create a highly granular nanocrystalline microstructure in LSCF thin films and high substrate temperatures to produce linear temperature-dependent stress evolution that is dominated by compressive stresses in μSOFC membranes. Insight and trade-off on the synthesis are revealed by probing microstructure evolution and electrical conductivity in LSCF thin films, in addition to in situ monitoring of membrane deformation while measuring μSOFC performance at varying temperatures. From these studies, we were able to successfully fabricate failure-resistant square μSOFC (LSCF/YSZ/Pt) membranes with width of 250 μm and crack-free cathodes with thickness of ∼70 nm. Peak power density of ∼120 mW cm -2 and open circuit voltage of ∼0.6 V at 560 °C were achieved on a μSOFC array chip containing ten such membranes. Mechanisms affecting fuel cell performance are discussed. Our results provide fundamental insight to pathways of microstructure and stress engineering of ultra-thin, dense oxide cathodes and μSOFC membranes.

Micro-opto-mechanical devices and systems using epitaxial lift off

NASA Technical Reports Server (NTRS)

Camperi-Ginestet, C.; Kim, Young W.; Wilkinson, S.; Allen, M.; Jokerst, N. M.

1993-01-01

The integration of high quality, single crystal thin film gallium arsenide (GaAs) and indium phosphide (InP) based photonic and electronic materials and devices with host microstructures fabricated from materials such as silicon (Si), glass, and polymers will enable the fabrication of the next generation of micro-opto-mechanical systems (MOMS) and optoelectronic integrated circuits. Thin film semiconductor devices deposited onto arbitrary host substrates and structures create hybrid (more than one material) near-monolithic integrated systems which can be interconnected electrically using standard inexpensive microfabrication techniques such as vacuum metallization and photolithography. These integrated systems take advantage of the optical and electronic properties of compound semiconductor devices while still using host substrate materials such as silicon, polysilicon, glass and polymers in the microstructures. This type of materials optimization for specific tasks creates higher performance systems than those systems which must use trade-offs in device performance to integrate all of the function in a single material system. The low weight of these thin film devices also makes them attractive for integration with micromechanical devices which may have difficulty supporting and translating the full weight of a standard device. These thin film devices and integrated systems will be attractive for applications, however, only when the development of low cost, high yield fabrication and integration techniques makes their use economically feasible. In this paper, we discuss methods for alignment, selective deposition, and interconnection of thin film epitaxial GaAs and InP based devices onto host substrates and host microstructures.

Research on precision grinding technology of large scale and ultra thin optics

NASA Astrophysics Data System (ADS)

Zhou, Lian; Wei, Qiancai; Li, Jie; Chen, Xianhua; Zhang, Qinghua

2018-03-01

The flatness and parallelism error of large scale and ultra thin optics have an important influence on the subsequent polishing efficiency and accuracy. In order to realize the high precision grinding of those ductile elements, the low deformation vacuum chuck was designed first, which was used for clamping the optics with high supporting rigidity in the full aperture. Then the optics was planar grinded under vacuum adsorption. After machining, the vacuum system was turned off. The form error of optics was on-machine measured using displacement sensor after elastic restitution. The flatness would be convergenced with high accuracy by compensation machining, whose trajectories were integrated with the measurement result. For purpose of getting high parallelism, the optics was turned over and compensation grinded using the form error of vacuum chuck. Finally, the grinding experiment of large scale and ultra thin fused silica optics with aperture of 430mm×430mm×10mm was performed. The best P-V flatness of optics was below 3 μm, and parallelism was below 3 ″. This machining technique has applied in batch grinding of large scale and ultra thin optics.

Electronic structures and chemical states of methylammonium lead triiodide thin films and the impact of annealing and moisture exposure

NASA Astrophysics Data System (ADS)

Yamanaka, Soichiro; Hayakawa, Kei; Cojocaru, Ludmila; Tsuruta, Ryohei; Sato, Tomoya; Mase, Kazuhiko; Uchida, Satoshi; Nakayama, Yasuo

2018-04-01

Methylammonium lead triiodide (CH3NH3PbI3) is the fundamental material used in perovskite solar cells, and its electronic properties have, therefore, attracted a great deal of attention as a potential key to highly efficient solar cell performance. However, the deterioration of perovskite solar cells when exposed to high temperature and humidity remains a serious obstacle to the material's use, and the clarification of the degradation mechanisms has been keenly anticipated. In this study, the valence electronic structures and depth-dependence of the chemical states of CH3NH3PbI3 thin films are investigated using ultraviolet photoelectron spectroscopy and excitation energy dependent X-ray photoelectron spectroscopy. Additionally, the effects of high temperature and a moisture rich atmosphere on the CH3NH3PbI3 thin films are examined. It is confirmed that the high temperature and moist atmosphere facilitate the oxidation of CH3NH3PbI3, whereas the Pb:I stoichiometry of the CH3NH3PbI3 thin films is found to be preserved at its original ratio (1:3) after thermal annealing and exposure to a moist atmosphere.

Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition.

PubMed

Yoo, Young Jin; Lee, Gil Ju; Jang, Kyung-In; Song, Young Min

2017-08-29

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.  We present an advanced method for fabricating ultra-thin color films with improved characteristics. The proposed process addresses several fabrication issues, including large area processing. Specifically, the protocol describes a process for fabricating ultra-thin color films using an electron beam evaporator for oblique angle deposition of germanium (Ge) and gold (Au) on silicon (Si) substrates.  Film porosity produced by the oblique angle deposition induces color changes in the ultra-thin film. The degree of color change depends on factors such as deposition angle and film thickness. Fabricated samples of the ultra-thin color films showed improved color tunability and color purity. In addition, the measured reflectance of the fabricated samples was converted into chromatic values and analyzed in terms of color. Our ultra-thin film fabricating method is expected to be used for various ultra-thin film applications such as flexible color electrodes, thin film solar cells, and optical filters. Also, the process developed here for analyzing the color of the fabricated samples is broadly useful for studying various color structures.

Thin film transistor performance of amorphous indium–zinc oxide semiconductor thin film prepared by ultraviolet photoassisted sol–gel processing

NASA Astrophysics Data System (ADS)

Kodzasa, Takehito; Nobeshima, Taiki; Kuribara, Kazunori; Yoshida, Manabu

2018-05-01

We have fabricated an amorphous indium–zinc oxide (IZO, In/Zn = 3/1) semiconductor thin-film transistor (AOS-TFT) by the sol–gel technique using ultraviolet (UV) photoirradiation and post-treatment in high-pressure O2 at 200 °C. The obtained TFT showed a hole carrier mobility of 0.02 cm2 V‑1 s‑1 and an on/off current ratio of 106. UV photoirradiation leads to the decomposition of the organic agents and hydroxide group in the IZO gel film. Furthermore, the post-treatment annealing at a high O2 pressure of more than 0.6 MPa leads to the filling of the oxygen vacancies in a poor metal–oxygen network in the IZO film.

Highly stable thin film transistors using multilayer channel structure

NASA Astrophysics Data System (ADS)

Nayak, Pradipta K.; Wang, Zhenwei; Anjum, D. H.; Hedhili, M. N.; Alshareef, H. N.

2015-03-01

We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60 °C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.

Enhanced light absorption in an ultrathin silicon solar cell utilizing plasmonic nanostructures

NASA Astrophysics Data System (ADS)

Xiao, Sanshui; Mortensen, Niels A.

2012-10-01

Nowadays, bringing photovoltaics to the market is mainly limited by high cost of electricity produced by the photovoltaic solar cell. Thin-film photovoltaics offers the potential for a significant cost reduction compared to traditional photovoltaics. However, the performance of thin-film solar cells is generally limited by poor light absorption. We propose an ultrathin-film silicon solar cell configuration based on SOI structure, where the light absorption is enhanced by use of plasmonic nanostructures. By placing a one-dimensional plasmonic nanograting on the bottom of the solar cell, the generated photocurrent for a 200 nm-thickness crystalline silicon solar cell can be enhanced by 90% in the considered wavelength range. These results are paving a promising way for the realization of high-efficiency thin-film solar cells.

Development of plasma assisted thermal vapor deposition technique for high-quality thin film.

PubMed

Lee, Kang-Il; Choi, Yong Sup; Park, Hyun Jae

2016-12-01

The novel technique of Plasma-Assisted Vapor Deposition (PAVD) is developed as a new deposition method for thin metal films. The PAVD technique yields a high-quality thin film without any heating of the substrate because evaporated particles acquire energy from plasma that is confined to the inside of the evaporation source. Experiments of silver thin film deposition have been carried out in conditions of pressure lower than 10 -3 Pa. Pure silver plasma generation is verified by the measurement of the Ag-I peak using optical emission spectroscopy. A four point probe and a UV-VIS spectrophotometer are used to measure the electrical and optical properties of the silver film that is deposited by PAVD. For an ultra-thin silver film with a thickness of 6.5 nm, we obtain the result of high-performance silver film properties, including a sheet resistance <20 Ω sq -1 and a visible-range transmittance >75%. The PAVD-film properties show a low sheet resistance of 30% and the same transmittance with conventional thermal evaporation film. In the PAVD source, highly energetic particles and UV from plasma do not reach the substrate because the plasma is completely shielded by the optimized nozzle of the crucible. This new PAVD technique could be a realistic solution to improve the qualities of transparent electrodes for organic light emission device fabrication without causing damage to the organic layers.

Development of plasma assisted thermal vapor deposition technique for high-quality thin film

NASA Astrophysics Data System (ADS)

Lee, Kang-Il; Choi, Yong Sup; Park, Hyun Jae

2016-12-01

The novel technique of Plasma-Assisted Vapor Deposition (PAVD) is developed as a new deposition method for thin metal films. The PAVD technique yields a high-quality thin film without any heating of the substrate because evaporated particles acquire energy from plasma that is confined to the inside of the evaporation source. Experiments of silver thin film deposition have been carried out in conditions of pressure lower than 10-3 Pa. Pure silver plasma generation is verified by the measurement of the Ag-I peak using optical emission spectroscopy. A four point probe and a UV-VIS spectrophotometer are used to measure the electrical and optical properties of the silver film that is deposited by PAVD. For an ultra-thin silver film with a thickness of 6.5 nm, we obtain the result of high-performance silver film properties, including a sheet resistance <20 Ω sq-1 and a visible-range transmittance >75%. The PAVD-film properties show a low sheet resistance of 30% and the same transmittance with conventional thermal evaporation film. In the PAVD source, highly energetic particles and UV from plasma do not reach the substrate because the plasma is completely shielded by the optimized nozzle of the crucible. This new PAVD technique could be a realistic solution to improve the qualities of transparent electrodes for organic light emission device fabrication without causing damage to the organic layers.

Thin-film filament-based solar cells and modules

NASA Astrophysics Data System (ADS)

Tuttle, J. R.; Cole, E. D.; Berens, T. A.; Alleman, J.; Keane, J.

1997-04-01

This concept paper describes a patented, novel photovoltaic (PV) technology that is capable of achieving near-term commercialization and profitability based upon design features that maximize product performance while minimizing initial and future manufacturing costs. DayStar Technologies plans to exploit these features and introduce a product to the market based upon these differential positions. The technology combines the demonstrated performance and reliability of existing thin-film PV product with a cell and module geometry that cuts material usage by a factor of 5, and enhances performance and manufacturability relative to standard flat-plate designs. The target product introduction price is 1.50/Watt-peak (Wp). This is approximately one-half the cost of the presently available PV product. Additional features include: increased efficiency through low-level concentration, no scribe or grid loss, simple series interconnect, high voltage, light weight, high-throughput manufacturing, large area immediate demonstration, flexibility, modularity.

Synthesis of high quality graphene on capped (1 1 1) Cu thin films obtained by high temperature secondary grain growth on c-plane sapphire substrates

NASA Astrophysics Data System (ADS)

Kim, Youngwoo; Moyen, Eric; Yi, Hemian; Avila, José; Chen, Chaoyu; Asensio, Maria C.; Lee, Young Hee; Pribat, Didier

2018-07-01

We propose a novel growth technique, in which graphene is synthesized on capped Cu thin films deposited on c-plane sapphire. The cap is another sapphire plate which is just laid upon the Cu thin film, in direct contact with it. Thanks to this ‘contact cap’, Cu evaporation can be suppressed at high temperature and the 400 nm-thick Cu films can be annealed above 1000 °C, resulting in (1 1 1)-oriented grains of millimeter size. Following this high temperature annealing, graphene is grown by chemical vapor deposition during the same pump-down operation, without removing the contact cap. The orientation and doping type of the as-grown graphene were first studied, using low energy electron diffraction, as well as high resolution angle-resolved photoemission spectroscopy. In particular, the orientation relationships between the graphene and copper thin film with respect to the sapphire substrate were precisely determined. We find that the graphene sheets exhibit a minimal rotational disorder, with ~90% of the grains aligned along the copper high symmetry direction. Detailed transport measurements were also performed using field-effect transistor structures. Carrier mobility values as high as 8460 cm2 V‑1 s‑1 have been measured on top gate transistors fabricated directly on the sapphire substrate, by etching the Cu film from underneath the graphene sheets. This is by far the best carrier mobility value obtained to date for graphene sheets synthesized on a thin film-type metal substrate.

Cryogenic glass-filament-wound tank evaluation

NASA Technical Reports Server (NTRS)

Morris, E. E.; Landes, R. E.

1971-01-01

High-pressure glass-filament-wound fluid storage vessels with thin aluminum liners were designed, fabricated, and tested at ambient and cryogenic temperatures which demonstrated the feasibility of producing such vessels as well as high performance and light weight. Significant developments and advancements were made in solving problems associated with the thin metal liners in the tanks, including liner bonding to the overwrap and high strain magnification at the vessel polar bosses. The vessels had very high burst strengths, and failed in cyclic fatigue tests by local liner fracture and leakage without structural failure of the composite tank wall. The weight of the tanks was only 40 to 55% of comparable 2219-T87 aluminum and Inconel 718 tanks.

Thin liquid/gas diffusion layers for high-efficiency hydrogen production from water splitting

DOE PAGES

Mo, Jingke; Retterer, Scott T.; Cullen, David A.; ...

2016-06-13

Liquid/gas diffusion layers (LGDLs) play a crucial role in electrochemical energy technology and hydrogen production, and are expected to simultaneously transport electrons, heat, and reactants/products with minimum voltage, current, thermal, interfacial, and fluidic losses. In addition, carbon materials, which are typically used in proton exchange membrane fuel cells (PEMFCs), are unsuitable for PEM electrolyzer cells (PEMECs). In this study, a novel titanium thin LGDL with well-tunable pore morphologies was developed by employing nano-manufacturing and was applied in a standard PEMEC. The LGDL tests show significant performance improvements. The operating voltages required at a current density of 2.0 A/cm 2 weremore » as low as 1.69 V, and its efficiency reached a report high of up to 88%. The new thin and flat LGDL with well-tunable straight pores has been demonstrated to remarkably reduce the ohmic, interfacial and transport losses. In addition, well-tunable features, including pore size, pore shape, pore distribution, and thus porosity and permeability, will be very valuable for developing PEMEC models and for validation of its simulations with optimal and repeatable performance. The LGDL thickness reduction from greater than 350 μm of conventional LGDLs to 25 μm will greatly decrease the weight and volume of PEMEC stacks, and represents a new direction for future developments of low-cost PEMECs with high performance.« less

The magnetic properties and microstructure of Co-Pt thin films using wet etching process.

PubMed

Lee, Chang-Hyoung; Cho, Young-Lae; Lee, Won-Pyo; Suh, Su-Jeong

2014-11-01

Perpendicular magnetic recording (PMR) is a promising candidate for high density magnetic recording and has already been applied to hard disk drive (HDD) systems. However, media noise still limits the recording density. To reduce the media noise and achieve a high signal-to-noise ratio (SNR) in hard disk media, the grains of the magnetic layer must be magnetically isolated from each other. This study examined whether sputter-deposited Co-Pt thin films can have adjacent grains that are physically isolated. To accomplish this, the effects of the sputtering conditions and wet etching process on magnetic properties and the microstructure of the films were investigated. The film structure was Co-Pt (30 nm)/Ru (30 nm)/NiFe (10 nm)/Ta (5 nm). The composition of the Co-Pt thin films was Co-30.7 at.% Pt. The Co-Pt thin films were deposited in Ar gas at 5, 10, 12.5, and 15 mTorr. Wet etching process was performed using 7% nitric acid solution at room temperature. These films had high out-of-plane coercivity of up to 7032 Oe, which is twice that of the as-deposited film. These results suggest that wet etched Co-Pt thin films have weaker exchange coupling and enhanced out-of-plane coercivity, which would reduce the medium noise.

Tailoring indium oxide nanocrystal synthesis conditions for air-stable high-performance solution-processed thin-film transistors.

PubMed

Swisher, Sarah L; Volkman, Steven K; Subramanian, Vivek

2015-05-20

Semiconducting metal oxides (ZnO, SnO2, In2O3, and combinations thereof) are a uniquely interesting family of materials because of their high carrier mobilities in the amorphous and generally disordered states, and solution-processed routes to these materials are of particular interest to the printed electronics community. Colloidal nanocrystal routes to these materials are particularly interesting, because nanocrystals may be formulated with tunable surface properties into stable inks, and printed to form devices in an additive manner. We report our investigation of an In2O3 nanocrystal synthesis for high-performance solution-deposited semiconductor layers for thin-film transistors (TFTs). We studied the effects of various synthesis parameters on the nanocrystals themselves, and how those changes ultimately impacted the performance of TFTs. Using a sintered film of solution-deposited In2O3 nanocrystals as the TFT channel material, we fabricated devices that exhibit field effect mobility of 10 cm(2)/(V s) and an on/off current ratio greater than 1 × 10(6). These results outperform previous air-stable nanocrystal TFTs, and demonstrate the suitability of colloidal nanocrystal inks for high-performance printed electronics.

Characterization of Thick and Thin Film SiCN for Pressure Sensing at High Temperatures

PubMed Central

Leo, Alfin; Andronenko, Sergey; Stiharu, Ion; Bhat, Rama B.

2010-01-01

Pressure measurement in high temperature environments is important in many applications to provide valuable information for performance studies. Information on pressure patterns is highly desirable for improving performance, condition monitoring and accurate prediction of the remaining life of systems that operate in extremely high temperature environments, such as gas turbine engines. A number of technologies have been recently investigated, however these technologies target specific applications and they are limited by the maximum operating temperature. Thick and thin films of SiCN can withstand high temperatures. SiCN is a polymer-derived ceramic with liquid phase polymer as its starting material. This provides the advantage that it can be molded to any shape. CERASET™ also yields itself for photolithography, with the addition of photo initiator 2, 2-Dimethoxy-2-phenyl-acetophenone (DMPA), thereby enabling photolithographical patterning of the pre-ceramic polymer using UV lithography. SiCN fabrication includes thermosetting, crosslinking and pyrolysis. The technology is still under investigation for stability and improved performance. This work presents the preparation of SiCN films to be used as the body of a sensor for pressure measurements in high temperature environments. The sensor employs the phenomenon of drag effect. The pressure sensor consists of a slender sensitive element and a thick blocking element. The dimensions and thickness of the films depend on the intended application of the sensors. Fabrication methods of SiCN ceramics both as thin (about 40–60 μm) and thick (about 2–3 mm) films for high temperature applications are discussed. In addition, the influence of thermosetting and annealing processes on mechanical properties is investigated. PMID:22205871

Semiconducting carbon nanotube network thin-film transistors with enhanced inkjet-printed source and drain contact interfaces

NASA Astrophysics Data System (ADS)

Lee, Yongwoo; Yoon, Jinsu; Choi, Bongsik; Lee, Heesung; Park, Jinhee; Jeon, Minsu; Han, Jungmin; Lee, Jieun; Kim, Yeamin; Kim, Dae Hwan; Kim, Dong Myong; Choi, Sung-Jin

2017-10-01

Carbon nanotubes (CNTs) are emerging materials for semiconducting channels in high-performance thin-film transistor (TFT) technology. However, there are concerns regarding the contact resistance (Rcontact) in CNT-TFTs, which limits the ultimate performance, especially the CNT-TFTs with the inkjet-printed source/drain (S/D) electrodes. Thus, the contact interfaces comprising the overlap between CNTs and metal S/D electrodes play a particularly dominant role in determining the performances and degree of variability in the CNT-TFTs with inkjet-printed S/D electrodes. In this work, the CNT-TFTs with improved device performance are demonstrated to enhance contact interfaces by controlling the CNT density at the network channel and underneath the inkjet-printed S/D electrodes during the formation of a CNT network channel. The origin of the improved device performance was systematically investigated by extracting Rcontact in the CNT-TFTs with the enhanced contact interfaces by depositing a high density of CNTs underneath the S/D electrodes, resulting in a 59% reduction in Rcontact; hence, the key performance metrics were correspondingly improved without sacrificing any other device metrics.

Effect-directed analysis via hyphenated high-performance thin-layer chromatography for bioanalytical profiling of sunflower leaves.

PubMed

Móricz, Ágnes M; Ott, Péter G; Yüce, Imanuel; Darcsi, András; Béni, Szabolcs; Morlock, Gertrud E

2018-01-19

High-performance thin-layer chromatography (HPTLC) coupled with effect-directed analysis was used for non-targeted screening of sunflower leaf extract for components exhibiting antioxidant, antibacterial and/or cholinesterase enzyme inhibitory effects. The active compounds were characterized by HPTLC-electrospray ionization-high resolution mass spectrometry (ESI-HRMS) and HPTLC-Direct Analysis in Real Time (DART)-MS/MS. The latter ambient ionization technique (less soft than ESI) resulted in oxidation and fragmentation products and characteristic fragment ions. NMR spectroscopy after targeted isolation via preparative normal phase flash chromatography and semi-preparative reversed phase high-performance liquid chromatography supported the identification of two diterpenes to be (-)-kaur-16-en-19-oic acid and 15-α-angeloyloxy-ent-kaur-16-en-19-oic acid. Both compounds found to be multi-potent as they inhibited acetylcholinesterase and butyrylcholinesterase and showed antibacterial effects against Gram-positive Bacillus subtilis and Gram-negative Aliivibrio fischeri bacteria. Kaurenoic acid was also active against the Gram-negative pepper pathogenic Xanthomonas euvesicatoria bacteria. Copyright © 2017 Elsevier B.V. All rights reserved.

Growth of IZO/IGZO dual-active-layer for low-voltage-drive and high-mobility thin film transistors based on an ALD grown Al2O3 gate insulator

NASA Astrophysics Data System (ADS)

Ding, Xingwei; Zhang, Hao; Ding, He; Zhang, Jianhua; Huang, Chuanxin; Shi, Weimin; Li, Jun; Jiang, Xueyin; Zhang, Zhilin

2014-12-01

We successfully integrated the high-performance oxide thin film transistors with novel IZO/IGZO dual-active-layers. The results showed that dual-active-layer (IZO/IGZO) TFTs, compared with single active layer IGZO TFTs and IZO TFTs, exhibited the excellent performances; specifically, a high field effect mobility of 14.4 cm2/Vs, a suitable threshold voltage of 0.8 V, a high on/off ratio of more than 107, a steep sub-threshold swing of 0.13 V/dec, and a substantially small threshold voltage shift of 0.51 V after temperature stress from 293 K to 353 K. In order to understand the superior performance, the density-of-states (DOS) were investigated based on the temperature-dependent transfer curves. The superior electric properties were attributed to the smaller DOS and higher carrier concentration. The proposed IZO/IGZO-TFT in this paper can be used as driving devices in the next-generation flat panel displays.

Optical sensor array platform based on polymer electronic devices

NASA Astrophysics Data System (ADS)

Koetse, Marc M.; Rensing, Peter A.; Sharpe, Ruben B. A.; van Heck, Gert T.; Allard, Bart A. M.; Meulendijks, Nicole N. M. M.; Kruijt, Peter G. M.; Tijdink, Marcel W. W. J.; De Zwart, René M.; Houben, René J.; Enting, Erik; van Veen, Sjaak J. J. F.; Schoo, Herman F. M.

2007-10-01

Monitoring of personal wellbeing and optimizing human performance are areas where sensors have only begun to be used. One of the reasons for this is the specific demands that these application areas put on the underlying technology and system properties. In many cases these sensors will be integrated in clothing, be worn on the skin, or may even be placed inside the body. This implies that flexibility and wearability of the systems is essential for their success. Devices based on polymer semiconductors allow for these demands since they can be fabricated with thin film technology. The use of thin film device technology allows for the fabrication of very thin sensors (e.g. integrated in food product packaging), flexible or bendable sensors in wearables, large area/distributed sensors, and intrinsically low-cost applications in disposable products. With thin film device technology a high level of integration can be achieved with parts that analyze signals, process and store data, and interact over a network. Integration of all these functions will inherently lead to better cost/performance ratios, especially if printing and other standard polymer technology such as high precision moulding is applied for the fabrication. In this paper we present an optical transmission sensor array based on polymer semiconductor devices made by thin film technology. The organic devices, light emitting diodes, photodiodes and selective medium chip, are integrated with classic electronic components. Together they form a versatile sensor platform that allows for the quantitative measurement of 100 channels and communicates wireless with a computer. The emphasis is given to the sensor principle, the design, fabrication technology and integration of the thin film devices.

High Performance Piezoelectric Thin Films for Shape Control in Large Inflatable Structures

NASA Technical Reports Server (NTRS)

Neurgaonkar, R. R.; Nelson, J. G.

1999-01-01

The objective of this research and development program was to develop PbZr(1-x)Ti(x)O3 (PZT) and Pb(1-x)Ba(x)Nb2O6 (PBN) materials with large piezoelectric response which are suitable for shape control in large inflatable structures. Two approaches were to be considered: (1) direct deposition of PZT and PBN films on flexible plastic or thin metal foil substrates, and (2) deposition on Si followed by fabrication of hybrid structures on mylar or kapton. Testing in shape control concepts was carried out at JPL and based on their results, the required modifications were made in the final film compositions and deposition techniques. The program objective was to identify and then optimize piezoelectric materials for NASA shape control applications. This involved the bulk piezoelectric and photovoltaic responses and the compatibility of the thin films with appropriate substrate structures. Within the PZT system, Rockwell has achieved the highest reported piezoelectric coefficient (d(sub 33) greater than 100 pC/N) of any ceramic composition. We used this experience in piezoelectric technology to establish compositions that can effectively address the issues of this program. The performance of piezoelectric thin films depends directly on d(sub ij) and Epsilon. The challenge was to find PZT compositions that maintained high d(sub ij) and Epsilon, while also exhibiting a large photovoltaic effect and integrate thin films of this composition into the system structure necessary to meet shape control applications. During the course of this program, several PZT and PLZT compositions were identified that meet these requirements. Two such compositions were successfully used in electrical and optical actuation studies of thin film structures.

High Performance Piezoelectric Thin Films for Shape Control in Large Inflatable Structures

NASA Technical Reports Server (NTRS)

Neurgaonkar, R. R.; Nelson, J. G.

1999-01-01

The objective of this research and development program was to develop PbZr(1-x)Ti(x)O3 (PZT) and Pb(1-x)Ba(x)Nb2O6 (PBN) materials with large piezoelectric response which are suitable for shape control in large inflatable structures. Two approaches were to be considered: (1) direct deposition of PZT and PBN films on flexible plastic or thin metal foil substrates, and (2) deposition on Si followed by fabrication of hybrid structures on mylar or kapton. Testing in shape control concepts was carried out at JPL and based on their results, the required modifications were made in the final film compositions and deposition techniques. The program objective was to identify and then optimize piezoelectric materials for NASA shape control applications. This involved the bulk piezoelectric and photovoltaic responses and the compatibility of the thin films with appropriate substrate structures. Within the PZT system, Rockwell has achieved the highest reported piezoelectric coefficient (d(sub 33) greater than 100 pC/N) of any ceramic composition. We used this experience in piezoelectric technology to establish compositions that can effectively address the issues of this program. The performance of piezoelectric thin films depends directly on d(sub ij) and epsilin. The challenge was to find PZT compositions that maintained high d(sub ij) and epsilon, while also exhibiting a large photovoltaic effect and integrate thin films of this composition into the system structure necessary to meet shape control applications. During the course of this program, several PZT and PLZT compositions were identified that meet these requirements. Two such compositions were successfully used in electrical and optical actuation studies of thin film structures.

Enhanced photoelectrochemical performance of Ti-doped hematite thin films prepared by the sol-gel method

NASA Astrophysics Data System (ADS)

Lian, Xiaojuan; Yang, Xin; Liu, Shangjun; Xu, Ying; Jiang, Chunping; Chen, Jinwei; Wang, Ruilin

2012-01-01

Ti-doped α-Fe2O3 thin films were successfully prepared on FTO substrates by the sol-gel route. Hematite film was characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and energy dispersive spectrometer (EDS). The XRD data showed α-Fe2O3 had a preferred (1 1 0) orientation which belonged to the rhombohedral system. Interestingly, the grains turned into worm-like shape after annealed at high temperature. The IPCE could reach 32.6% at 400 nm without any additional potential vs. SCE. Titanium in the lattice can affect the photo electro chemical performance positively by increasing the conductivity of the thin film. So the excited electrons and holes could live longer, rather than recombining with each other rapidly as undoped hematite. And the efficient carrier density on the Ti-doped anode surface was higher than the undoped anode, which contribute to the well PEC performance.

Controllable self-induced passivation of hybrid lead iodide perovskites toward high performance solar cells.

PubMed

Chen, Qi; Zhou, Huanping; Song, Tze-Bin; Luo, Song; Hong, Ziruo; Duan, Hsin-Sheng; Dou, Letian; Liu, Yongsheng; Yang, Yang

2014-07-09

To improve the performance of the polycrystalline thin film devices, it requires a delicate control of its grain structures. As one of the most promising candidates among current thin film photovoltaic techniques, the organic/inorganic hybrid perovskites generally inherit polycrystalline nature and exhibit compositional/structural dependence in regard to their optoelectronic properties. Here, we demonstrate a controllable passivation technique for perovskite films, which enables their compositional change, and allows substantial enhancement in corresponding device performance. By releasing the organic species during annealing, PbI2 phase is presented in perovskite grain boundaries and at the relevant interfaces. The consequent passivation effects and underlying mechanisms are investigated with complementary characterizations, including scanning electron microscopy (SEM), X-ray diffraction (XRD), time-resolved photoluminescence decay (TRPL), scanning Kelvin probe microscopy (SKPM), and ultraviolet photoemission spectroscopy (UPS). This controllable self-induced passivation technique represents an important step to understand the polycrystalline nature of hybrid perovskite thin films and contributes to the development of perovskite solar cells judiciously.

Effect of ordered mesoporous carbon contact layer on the sensing performance of sputtered RuO2 thin film pH sensor.

PubMed

Lonsdale, W; Maurya, D K; Wajrak, M; Alameh, K

2017-03-01

The effect of contact layer on the pH sensing performance of a sputtered RuO 2 thin film pH sensor is investigated. The response of pH sensors employing RuO 2 thin film electrodes on screen-printed Pt, carbon and ordered mesoporous carbon (OMC) contact layers are measured over a pH range from 4 to 10. Working electrodes with OMC contact layer are found to have Nernstian pH sensitivity (-58.4mV/pH), low short-term drift rate (5.0mV/h), low hysteresis values (1.13mV) and fast reaction times (30s), after only 1h of conditioning. A pH sensor constructed with OMC carbon contact layer displays improved sensing performance compared to Pt and carbon-based counterparts, making this electrode more attractive for applications requiring highly-accurate pH sensing with reduced conditioning time. Copyright © 2016 Elsevier B.V. All rights reserved.

Preventing Thin Film Dewetting via Graphene Capping.

PubMed

Cao, Peigen; Bai, Peter; Omrani, Arash A; Xiao, Yihan; Meaker, Kacey L; Tsai, Hsin-Zon; Yan, Aiming; Jung, Han Sae; Khajeh, Ramin; Rodgers, Griffin F; Kim, Youngkyou; Aikawa, Andrew S; Kolaczkowski, Mattew A; Liu, Yi; Zettl, Alex; Xu, Ke; Crommie, Michael F; Xu, Ting

2017-09-01

A monolayer 2D capping layer with high Young's modulus is shown to be able to effectively suppress the dewetting of underlying thin films of small organic semiconductor molecule, polymer, and polycrystalline metal, respectively. To verify the universality of this capping layer approach, the dewetting experiments are performed for single-layer graphene transferred onto polystyrene (PS), semiconducting thienoazacoronene (EH-TAC), gold, and also MoS 2 on PS. Thermodynamic modeling indicates that the exceptionally high Young's modulus and surface conformity of 2D capping layers such as graphene and MoS 2 substantially suppress surface fluctuations and thus dewetting. As long as the uncovered area is smaller than the fluctuation wavelength of the thin film in a dewetting process via spinodal decomposition, the dewetting should be suppressed. The 2D monolayer-capping approach opens up exciting new possibilities to enhance the thermal stability and expands the processing parameters for thin film materials without significantly altering their physical properties. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Solid-State Thin-Film Supercapacitors with Ultrafast Charge/Discharge Based on N-Doped-Carbon-Tubes/Au-Nanoparticles-Doped-MnO2 Nanocomposites.

PubMed

Lv, Qiying; Wang, Shang; Sun, Hongyu; Luo, Jun; Xiao, Jian; Xiao, JunWu; Xiao, Fei; Wang, Shuai

2016-01-13

Although carbonaceous materials possess long cycle stability and high power density, their low-energy density greatly limits their applications. On the contrary, metal oxides are promising pseudocapacitive electrode materials for supercapacitors due to their high-energy density. Nevertheless, poor electrical conductivity of metal oxides constitutes a primary challenge that significantly limits their energy storage capacity. Here, an advanced integrated electrode for high-performance pseudocapacitors has been designed by growing N-doped-carbon-tubes/Au-nanoparticles-doped-MnO2 (NCTs/ANPDM) nanocomposite on carbon fabric. The excellent electrical conductivity and well-ordered tunnels of NCTs together with Au nanoparticles of the electrode cause low internal resistance, good ionic contact, and thus enhance redox reactions for high specific capacitance of pure MnO2 in aqueous electrolyte, even at high scan rates. A prototype solid-state thin-film symmetric supercapacitor (SSC) device based on NCTs/ANPDM exhibits large energy density (51 Wh/kg) and superior cycling performance (93% after 5000 cycles). In addition, the asymmetric supercapacitor (ASC) device assembled from NCTs/ANPDM and Fe2O3 nanorods demonstrates ultrafast charge/discharge (10 V/s), which is among the best reported for solid-state thin-film supercapacitors with both electrodes made of metal oxide electroactive materials. Moreover, its superior charge/discharge behavior is comparable to electrical double layer type supercapacitors. The ASC device also shows superior cycling performance (97% after 5000 cycles). The NCTs/ANPDM nanomaterial demonstrates great potential as a power source for energy storage devices.

Simultaneous quantification of withanolides in Withania somnifera by a validated high-performance thin-layer chromatographic method.

PubMed

Srivastava, Pooja; Tiwari, Neerja; Yadav, Akhilesh K; Kumar, Vijendra; Shanker, Karuna; Verma, Ram K; Gupta, Madan M; Gupta, Anil K; Khanuja, Suman P S

2008-01-01

This paper describes a sensitive, selective, specific, robust, and validated densitometric high-performance thin-layer chromatographic (HPTLC) method for the simultaneous determination of 3 key withanolides, namely, withaferin-A, 12-deoxywithastramonolide, and withanolide-A, in Ashwagandha (Withania somnifera) plant samples. The separation was performed on aluminum-backed silica gel 60F254 HPTLC plates using dichloromethane-methanol-acetone-diethyl ether (15 + 1 + 1 + 1, v/v/v/v) as the mobile phase. The withanolides were quantified by densitometry in the reflection/absorption mode at 230 nm. Precise and accurate quantification could be performed in the linear working concentration range of 66-330 ng/band with good correlation (r2 = 0.997, 0.999, and 0.996, respectively). The method was validated for recovery, precision, accuracy, robustness, limit of detection, limit of quantitation, and specificity according to International Conference on Harmonization guidelines. Specificity of quantification was confirmed using retention factor (Rf) values, UV-Vis spectral correlation, and electrospray ionization mass spectra of marker compounds in sample tracks.

Facile Preparation of Highly Conductive Metal Oxides by Self-Combustion for Solution-Processed Thermoelectric Generators.

PubMed

Kang, Young Hun; Jang, Kwang-Suk; Lee, Changjin; Cho, Song Yun

2016-03-02

Highly conductive indium zinc oxide (IZO) thin films were successfully fabricated via a self-combustion reaction for application in solution-processed thermoelectric devices. Self-combustion efficiently facilitates the conversion of soluble precursors into metal oxides by lowering the required annealing temperature of oxide films, which leads to considerable enhancement of the electrical conductivity of IZO thin films. Such enhanced electrical conductivity induced by exothermic heat from a combustion reaction consequently yields high performance IZO thermoelectric films. In addition, the effect of the composition ratio of In to Zn precursors on the electrical and thermoelectric properties of the IZO thin films was investigated. IZO thin films with a composition ratio of In:Zn = 6:2 at the low annealing temperature of 350 °C showed an enhanced electrical conductivity, Seebeck coefficient, and power factor of 327 S cm(-1), 50.6 μV K(-1), and 83.8 μW m(-1) K(-2), respectively. Moreover, the IZO thin film prepared at an even lower temperature of 300 °C retained a large power factor of 78.7 μW m(-1) K(-2) with an electrical conductivity of 168 S cm(-1). Using the combustive IZO precursor, a thermoelectric generator consisting of 15 legs was fabricated by a printing process. The thermoelectric array generated a thermoelectric voltage of 4.95 mV at a low temperature difference (5 °C). We suggest that the highly conductive IZO thin films by self-combustion may be utilized for fabricating n-type flexible printed thermoelectric devices.

Next-generation all-silica coatings for UV applications

NASA Astrophysics Data System (ADS)

Melninkaitis, A.; Grinevičiūtė, L.; Abromavičius, G.; Mažulė, L.; Smalakys, L.; Pupka, E.; Š čiuka, M.; Buzelis, R.; Kičas, S.

2017-11-01

Band-gap and refractive index are known as fundamental properties determining intrinsic optical resistance of multilayer dielectric coatings. By considering this fact we propose novel approach to manufacturing of interference thin films, based on artificial nano-structures of modulated porosity embedded in high band-gap matrix. Next generation all-silica mirrors were prepared by GLancing Angle Deposition (GLAD) using electron beam evaporation. High reflectivity (HR) was achieved by tailoring the porosity of highly resistant silica material during the thin film deposition process. Furthermore, the proposed approach was also demonstrated to work well in case of anti-reflection (AR) coatings. Conventional HR HfO2 and SiO2 as well as AR Al2O3 and SiO2 multilayers produced by Ion Beam Sputtering (IBS) were used as reference coatings. Damage performance of experimental coatings was also analyzed. All-silica based GLAD approach resulted in significant improvement of intrinsic laser damage resistance properties if compared to conventional coatings. Besides laser damage testing, other characteristics of experimental coatings are analyzed and discussed - reflectance, surface roughness and optical scattering. We believe that reported concept can be expanded to virtually any design of thin film coatings thus opening a new way of next generation highly resistant thin films well suited for high power and UV laser applications.

Highly Efficient Flexible Perovskite Solar Cells with Antireflection and Self-Cleaning Nanostructures.

PubMed

Tavakoli, Mohammad Mahdi; Tsui, Kwong-Hoi; Zhang, Qianpeng; He, Jin; Yao, Yan; Li, Dongdong; Fan, Zhiyong

2015-10-27

Flexible thin film solar cells have attracted a great deal of attention as mobile power sources and key components for building-integrated photovoltaics, due to their light weight and flexible features in addition to compatibility with low-cost roll-to-roll fabrication processes. Among many thin film materials, organometallic perovskite materials are emerging as highly promising candidates for high efficiency thin film photovoltaics; however, the performance, scalability, and reliability of the flexible perovskite solar cells still have large room to improve. Herein, we report highly efficient, flexible perovskite solar cells fabricated on ultrathin flexible glasses. In such a device structure, the flexible glass substrate is highly transparent and robust, with low thermal expansion coefficient, and perovskite thin film was deposited with a thermal evaporation method that showed large-scale uniformity. In addition, a nanocone array antireflection film was attached to the front side of the glass substrate in order to improve the optical transmittance and to achieve a water-repelling effect at the same time. It was found that the fabricated solar cells have reasonable bendability, with 96% of the initial value remaining after 200 bending cycles, and the power conversion efficiency was improved from 12.06 to 13.14% by using the antireflection film, which also demonstrated excellent superhydrophobicity.

Thin Film Approaches to the SRF Cavity Problem Fabrication and Characterization of Superconducting Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beringer, Douglas

Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory’s CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater performance benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency – 1.5more » GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m – there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (≈ 45 MV/m for Nb) where inevitable thermodynamic breakdown occurs. With state of the art Nb based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio frequency applications. Correlated studies on structure, surface morphology and superconducting properties of epitaxial Nb and MgB2 thin films are presented.« less

Prototype thin-film thermocouple/heat-flux sensor for a ceramic-insulated diesel engine

NASA Technical Reports Server (NTRS)

Kim, Walter S.; Barrows, Richard F.

1988-01-01

A platinum versus platinum-13 percent rhodium thin-film thermocouple/heat-flux sensor was devised and tested in the harsh, high-temperature environment of a ceramic-insulated, low-heat-rejection diesel engine. The sensor probe assembly was developed to provide experimental validation of heat transfer and thermal analysis methodologies applicable to the insulated diesel engine concept. The thin-film thermocouple configuration was chosen to approximate an uninterrupted chamber surface and provide a 1-D heat-flux path through the probe body. The engine test was conducted by Purdue University for Integral Technologies, Inc., under a DOE-funded contract managed by NASA Lewis Research Center. The thin-film sensor performed reliably during 6 to 10 hr of repeated engine runs at indicated mean surface temperatures up to 950 K. However, the sensor suffered partial loss of adhesion in the thin-film thermocouple junction area following maximum cyclic temperature excursions to greater than 1150 K.

Preparation of pentacene thin film deposited using organic material auto-feeding system for the fabrication of organic thin film transistor.

PubMed

Kim, Young Baek; Choi, Bum Ho; Lim, Yong Hwan; Yoo, Ha Na; Lee, Jong Ho; Kim, Jin Hyeok

2011-02-01

In this study, pentacene organic thin film was prepared using newly developed organic material auto-feeding system integrated with linear cell and characterized. The newly developed organic material auto-feeding system consists of 4 major parts: reservoir, micro auto-feeder, vaporizer, and linear cell. The deposition of organic thin film could be precisely controlled by adjusting feeding rate, main tube size, position and size of nozzle. 10 nm thick pentacene thin film prepared on glass substrate exhibited high uniformity of 3.46% which is higher than that of conventional evaporation method using point cell. The continuous deposition without replenishment of organic material can be performed over 144 hours with regulated deposition control. The grain size of pentacene film which affect to mobility of OTFT, was controlled as a function of the temperature.

Synthesis and characterization of Copper/Cobalt/Copper/Iron nanostructurated films with magnetoresistive properties

NASA Astrophysics Data System (ADS)

Ciupinǎ, Victor; Prioteasa, Iulian; Ilie, Daniela; Manu, Radu; Petrǎşescu, Lucian; Tutun, Ştefan Gabriel; Dincǎ, Paul; MustaÅ£ǎ, Ion; Lungu, Cristian Petricǎ; Jepu, IonuÅ£; Vasile, Eugeniu; Nicolescu, Virginia; Vladoiu, Rodica

2017-02-01

Copper/Cobalt/Copper/Iron thin films were synthesized in order to obtain nanostructured materials with special magnetoresistive properties. The multilayer films were deposited on silicon substrates. In this respect we used Thermionic Vacuum Arc Discharge Method (TVA). The benefit of this deposition technique is the ability to have a controlled range of thicknesses starting from few nanometers to hundreds of nanometers. The purity of the thin films was insured by a high vacuum pressure and a lack of any kind of buffer gas inside the coating chamber. The morphology and structure of the thin films were analyzed using Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) Techniques and Energy Dispersive X-ray Spectroscopy (EDXS). Magnetoresistive measurement results depict that thin films possess Giant Magneto-Resistance Effect (GMR). Magneto-Optic-Kerr Effect (MOKE) studies were performed to characterize the magnetic properties of these thin films.

Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.

PubMed

Kwon, Guhyun; Kim, Keetae; Choi, Byung Doo; Roh, Jeongkyun; Lee, Changhee; Noh, Yong-Young; Seo, SungYong; Kim, Myung-Gil; Kim, Choongik

2017-06-01

The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process.

PubMed

Na, Jae Won; Rim, You Seung; Kim, Hee Jun; Lee, Jin Hyeok; Hong, Seonghwan; Kim, Hyun Jae

2017-09-06

Solution-processed amorphous metal-oxide thin-film transistors (TFTs) utilizing an intermixed interface between a metal-oxide semiconductor and a dielectric layer are proposed. In-depth physical characterizations are carried out to verify the existence of the intermixed interface that is inevitably formed by interdiffusion of cations originated from a thermal process. In particular, when indium zinc oxide (IZO) semiconductor and silicon dioxide (SiO 2 ) dielectric layer are in contact and thermally processed, a Si 4+ intermixed IZO (Si/IZO) interface is created. On the basis of this concept, a high-performance Si/IZO TFT having both a field-effect mobility exceeding 10 cm 2 V -1 s -1 and a on/off current ratio over 10 7 is successfully demonstrated.

High-mobility and low-operating voltage organic thin film transistor with epoxy based siloxane binder as the gate dielectric

NASA Astrophysics Data System (ADS)

Tewari, Amit; Gandla, Srinivas; Pininti, Anil Reddy; Karuppasamy, K.; Böhm, Siva; Bhattacharyya, Arup R.; McNeill, Christopher R.; Gupta, Dipti

2015-09-01

This paper reports the fabrication of pentacene-based organic thin-film transistors using a dielectric material, Dynasylan ®SIVO110. The devices exhibit excellent performance characterized by a low threshold voltage of -1.4 V (operating voltage: 0 to -4 V) together with a mobility of 1.9 cm2 V-1s-1. These results are promising because it uses only a single layer of dielectric without performing any intermediate treatment. The reason is attributed to the high charge storage capacity of the dielectric (κ ˜ 20.02), a low interfacial trap density (2.56 × 1011cm-2), and favorable pentacene film morphology consisting of large and interconnected grains having an average size of 234 nm.

Strategies to improve the electrochemical performance of electrodes for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Yang, Ming-Che

Lithium-ion batteries are widely used in consumer market because of their lightweight and rechargeable property. However, for the application as power sources of hybrid electric vehicles (HEVs), which need excellent cycling performance, high energy density, high power density, capacity, and low cost, new materials still need to be developed to meet the demands. In this dissertation work, three different strategies were developed to improve the properties of the electrode of lithium batteries. First, the voltage profile and lithium diffusion battier of LiM1/2Mn 3/2O4 (M=Ti, V, Cr, Fe, Co, Ni and Cu) were predicted by first principles theory. The computation results suggest that doping with Co or Cu can potentially lower Li diffusion barrier compared with Ni doping. Our experimental research has focused on LiNixCuyMn 2-x-yO4 (0

Direct Room Temperature Welding and Chemical Protection of Silver Nanowire Thin Films for High Performance Transparent Conductors.

PubMed

Ge, Yongjie; Duan, Xidong; Zhang, Meng; Mei, Lin; Hu, Jiawen; Hu, Wei; Duan, Xiangfeng

2018-01-10

Silver nanowire (Ag-NW) thin films have emerged as a promising next-generation transparent electrode. However, the current Ag-NW thin films are often plagued by high NW-NW contact resistance and poor long-term stability, which can be largely attributed to the ill-defined polyvinylpyrrolidone (PVP) surface ligands and nonideal Ag-PVP-Ag contact at NW-NW junctions. Herein, we report a room temperature direct welding and chemical protection strategy to greatly improve the conductivity and stability of the Ag-NW thin films. Specifically, we use a sodium borohydride (NaBH 4 ) treatment process to thoroughly remove the PVP ligands and produce a clean Ag-Ag interface that allows direct welding of NW-NW junctions at room temperature, thus greatly improving the conductivity of the Ag-NW films, outperforming those obtained by thermal or plasmonic thermal treatment. We further show that, by decorating the as-formed Ag-NW thin film with a dense, hydrophobic dodecanethiol layer, the stability of the Ag-NW film can be greatly improved by 150-times compared with that of PVP-wrapped ones. Our studies demonstrate that a proper surface ligand design can effectively improve the conductivity and stability of Ag-NW thin films, marking an important step toward their applications in electronic and optoelectronic devices.

Characteristics of heat transfer fouling of thin stillage using model thin stillage and evaporator concentrates

NASA Astrophysics Data System (ADS)

Challa, Ravi Kumar

The US fuel ethanol demand was 50.3 billion liters (13.3 billion gallons) in 2012. Corn ethanol was produced primarily by dry grind process. Heat transfer equipment fouling occurs during corn ethanol production and increases the operating expenses of ethanol plants. Following ethanol distillation, unfermentables are centrifuged to separate solids as wet grains and liquid fraction as thin stillage. Evaporator fouling occurs during thin stillage concentration to syrup and decreases evaporator performance. Evaporators need to be shutdown to clean the deposits from the evaporator surfaces. Scheduled and unscheduled evaporator shutdowns decrease process throughput and results in production losses. This research were aimed at investigating thin stillage fouling characteristics using an annular probe at conditions similar to an evaporator in a corn ethanol production plant. Fouling characteristics of commercial thin stillage and model thin stillage were studied as a function of bulk fluid temperature and heat transfer surface temperature. Experiments were conducted by circulating thin stillage or carbohydrate mixtures in a loop through the test section which consisted of an annular fouling probe while maintaining a constant heat flux by electrical heating and fluid flow rate. The change in fouling resistance with time was measured. Fouling curves obtained for thin stillage and concentrated thin stillage were linear with time but no induction periods were observed. Fouling rates for concentrated thin stillage were higher compared to commercial thin stillage due to the increase in solid concentration. Fouling rates for oil skimmed and unskimmed concentrated thin stillage were similar but lower than concentrated thin stillage at 10% solids concentration. Addition of post fermentation corn oil to commercial thin stillage at 0.5% increments increased the fouling rates up to 1% concentration but decreased at 1.5%. As thin stillage is composed of carbohydrates, protein, lipid, fiber and minerals, simulated thin stillage was prepared with carbohydrate mixtures and tested for fouling rates. Induction period, maximum fouling resistance and mean fouling rates were determined. Two experiments were performed with two varieties of starch, waxy and high amylose and short chain carbohydrates, corn syrup solids and glucose. Interaction effects of glucose with starch varieties were studied. In the first experiment, short chain carbohydrates individual and interaction effects with starch were studied. For mixtures prepared from glucose and corn syrup solids, no fouling was observed. Mixtures prepared from starch, a long glucose polymer, showed marked fouling. Corn syrup solids and glucose addition to pure starch decreased the mean fouling rates and maximum fouling resistances. Between corn syrup solids and glucose, starch fouling rates were reduced with addition of glucose. Induction periods of pure mixtures of either glucose or corn syrup solids were longer than the test period (5 h). Pure starch mixture had no induction period. Maximum fouling resistance was higher for mixtures with higher concentration of longer polymers. Waxy starch had a longer induction period than high amylose starch. Maximum fouling resistance was higher for waxy than high amylose starch. Addition of glucose to waxy or high amylose starch increased induction period of mixtures longer than 5 h test period. It appears that the bulk fluid temperature plays an important role on carbohydrate mixture fouling rates. Higher bulk fluid temperatures increased the initial fouling rates of the carbohydrate mixtures. Carbohydrate type, depending on the polymer length, influenced the deposit formation. Longer chain carbohydrate, starch, had higher fouling rates compared to shorter carbohydrates such as glucose and corn syrup solids. For insoluble carbohydrate mixtures, fouling was severe. As carbohydrate solubility increased with bulk fluid temperature, surface reaction increased at probe surface and resulted in deposit formation. Higher surface temperatures eliminated induction periods for thin stillage and fouling was rapid on probe surface.

Stretchable transistors with buckled carbon nanotube films as conducting channels

DOEpatents

Arnold, Michael S; Xu, Feng

2015-03-24

Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors. The transistors, which are highly stretchable and bendable, exhibit stable performance even when operated under high tensile strains.

Facile fabrication of high-performance InGaZnO thin film transistor using hydrogen ion irradiation at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahn, Byung Du; Park, Jin-Seong; Chung, K. B., E-mail: kbchung@dongguk.edu

Device performance of InGaZnO (IGZO) thin film transistors (TFTs) are investigated as a function of hydrogen ion irradiation dose at room temperature. Field effect mobility is enhanced, and subthreshold gate swing is improved with the increase of hydrogen ion irradiation dose, and there is no thermal annealing. The electrical device performance is correlated with the electronic structure of IGZO films, such as chemical bonding states, features of the conduction band, and band edge states below the conduction band. The decrease of oxygen deficient bonding and the changes in electronic structure of the conduction band leads to the improvement of devicemore » performance in IGZO TFT with an increase of the hydrogen ion irradiation dose.« less

Effects of annealing temperature on the physicochemical, optical and photoelectrochemical properties of nanostructured hematite thin films prepared via electrodeposition method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Phuan, Yi Wen; Chong, Meng Nan, E-mail: Chong.Meng.Nan@monash.edu; Sustainable Water Alliance, Advanced Engineering Platform, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE

2015-09-15

Highlights: • Nanostructured hematite thin films were synthesized via electrodeposition method. • Effects of annealing on size, grain boundary and PEC properties were examined. • Photocurrents generation was enhanced when the thin films were annealed at 600 °C. • The highest photocurrent density of 1.6 mA/cm{sup 2} at 0.6 V vs Ag/AgCl was achieved. - Abstract: Hematite (α-Fe{sub 2}O{sub 3}) is a promising photoanode material for hydrogen production from photoelectrochemical (PEC) water splitting due to its wide abundance, narrow band-gap energy, efficient light absorption and high chemical stability under aqueous environment. The key challenge to the wider utilisation of nanostructuredmore » hematite-based photoanode in PEC water splitting, however, is limited by its low photo-assisted water oxidation caused by large overpotential in the nominal range of 0.5–0.6 V. The main aim of this study was to enhance the performance of hematite for photo-assisted water oxidation by optimising the annealing temperature used during the synthesis of nanostructured hematite thin films on fluorine-doped tin oxide (FTO)-based photoanodes prepared via the cathodic electrodeposition method. The resultant nanostructured hematite thin films were characterised using field emission-scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV-visible spectroscopy and Fourier transform infrared spectroscopy (FTIR) for their elemental composition, average nanocrystallites size and morphology; phase and crystallinity; UV-absorptivity and band gap energy; and the functional groups, respectively. Results showed that the nanostructured hematite thin films possess good ordered nanocrystallites array and high crystallinity after annealing treatment at 400–600 °C. FE-SEM images illustrated an increase in the average hematite nanocrystallites size from 65 nm to 95 nm when the annealing temperature was varied from 400 °C to 600 °C. As the crystallites size increases, the grain boundaries reduce and this suppresses the recombination rate of electron–hole pairs on the nanostructured hematite thin films. As a result, the measured photocurrent densities of nanostructured hematite thin films also increased. The highest measured photocurrent density of 1.6 mA/cm{sup 2} at 0.6 V vs Ag/AgCl in 1 M NaOH electrolyte was achieved for the nanostructured hematite thin film annealed at 600 °C. This study had confirmed that strong interdependencies exist between the average hematite nanocrystallites size and grain boundaries with annealing temperature on the eventual PEC water splitting performance of nanostructured hematite thin films. The annealed hematite thin films at a higher temperature will enhance the nanocrystals growth and thus, suppressing the electron–hole pairs recombination rate, lowering the grain boundary resistance and enabling higher photocurrent flow at the molecular level. As a result, the photocurrent density and thus, the overall PEC water splitting performance of the nanostructured hematite thin films are significantly enhanced.« less

The Interface Structure of FeSe Thin Film on CaF2 Substrate and its Influence on the Superconducting Performance.

PubMed

Qiu, Wenbin; Ma, Zongqing; Patel, Dipak; Sang, Lina; Cai, Chuanbing; Shahriar Al Hossain, Mohammed; Cheng, Zhenxiang; Wang, Xiaolin; Dou, Shi Xue

2017-10-25

The investigations into the interfaces in iron selenide (FeSe) thin films on various substrates have manifested the great potential of showing high-temperature-superconductivity in this unique system. In present work, we obtain FeSe thin films with a series of thicknesses on calcium fluoride (CaF 2 ) (100) substrates and glean the detailed information from the FeSe/CaF 2 interface by using scanning transmission electron microscopy (STEM). Intriguingly, we have found the universal existence of a calcium selenide (CaSe) interlayer with a thickness of approximate 3 nm between FeSe and CaF 2 in all the samples, which is irrelevant to the thickness of FeSe layers. A slight Se deficiency occurs in the FeSe layer due to the formation of CaSe interlayer. This Se deficiency is generally negligible except for the case of the ultrathin FeSe film (8 nm in thickness), in which the stoichiometric deviation from FeSe is big enough to suppress the superconductivity. Meanwhile, in the overly thick FeSe layer (160 nm in thickness), vast precipitates are found and recognized as Fe-rich phases, which brings about degradation in superconductivity. Consequently, the thickness dependence of superconducting transition temperature (T c ) of FeSe thin films is investigated and one of our atmosphere-stable FeSe thin film (127 nm) possesses the highest T c onset /T c zero as 15.1 K/13.4 K on record to date in the class of FeSe thin film with practical thickness. Our results provide a new perspective for exploring the mechanism of superconductivity in FeSe thin film via high-resolution STEM. Moreover, approaches that might improve the quality of FeSe/CaF 2 interfaces are also proposed for further enhancing the superconducting performance in this system.

[Synthesis and Characterization of a Sugar Based Electrolyte for Thin-film Polymer Batteries

NASA Technical Reports Server (NTRS)

1998-01-01

The work performed during the current renewal period, March 1,1998 focused primarily on the synthesis and characterization of a sugar based electrolyte for thin-film polymer batteries. The initial phase of the project involved developing a suitable sugar to use as the monomer in the polymeric electrolyte synthesis. The monomer has been synthesized and characterized completely. Overall the yield of this material is high and it can be produced in relatively large quantity easily and in high purity. The scheme used for the preparation of the monomer is outlined along with pertinent yields.

High-Tc superconductor coplanar waveguide filter

NASA Technical Reports Server (NTRS)

Chew, Wilbert; Bajuk, Louis J.; Cooley, Thomas W.; Foote, Marc C.; Hunt, Brian D.; Rascoe, Daniel L.; Riley, A. L.

1991-01-01

Coplanar waveguide (CPW) low-pass filters made of YBa2Cu3O(7-delta) (YBCO) on LaAlO3 substrates, with dimensions suited for integrated circuits, were fabricated and packaged. A complete filter gives a true idea of the advantages and difficulties in replacing thin-film metal with a high-temperature superconductor in a practical circuit. Measured insertion losses in liquid nitrogen were superior to the loss of a similar thin-film copper filter throughout the 0- to 9.5-GHz passband. These results demonstrate the performance of fully patterned YBCO in a practical CPW structure after sealing in a hermetic package.

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Bilayer Photoresist Insulator for High Performance Organic Thin-Film Transistors on Plastic Films

NASA Astrophysics Data System (ADS)

Wang, He; Li, Chun-Hong; Pan, Feng; Wang, Hai-Bo; Yan, Dong-Hang

2009-11-01

A novel bilayer photoresist insulator is applied in flexible vanadyl-phthalocyanine (VOPc) organic thin-film transistors (OTFTs). The micron-size patterns of this photoresisit insulator can be directly defined only by photolithography without the etching process. Furthermore, these OTFTs exhibit high field-effect mobility (about 0.8 cm2/Vs) and current on/off ratio (about 106). In particular, they show rather low hysteresis (< 1 V). The results demonstrate that this bilayer photoresist insulator can be applied in large-area electronics and in the facilitation of patterning insulators.

Development of an economical, thin, quiet, long-lasting, high friction surface layer, volume 1 : mix design and lab performance testing.

DOT National Transportation Integrated Search

2013-03-01

This project developed and evaluated four new asphalt concrete (AC) mixtures that use locally available : aggregates whenever possible with the ultimate goal of a cost-effective mixture that also improves pavement : performance. Although numerous tac...

Strong Influence of Humidity on Low-Temperature Thin-Film Fabrication via Metal Aqua Complex for High Performance Oxide Semiconductor Thin-Film Transistors.

PubMed

Lim, Keon-Hee; Huh, Jae-Eun; Lee, Jinwon; Cho, Nam-Kwang; Park, Jun-Woo; Nam, Bu-Il; Lee, Eungkyu; Kim, Youn Sang

2017-01-11

Oxide semiconductors thin film transistors (OS TFTs) with good transparency and electrical performance have great potential for future display technology. In particular, solution-processed OS TFTs have been attracted much attention due to many advantages such as continuous, large scale, and low cost processability. Recently, OS TFTs fabricated with a metal aqua complex have been focused because they have low temperature processability for deposition on flexible substrate as well as high field-effect mobility for application of advanced display. However, despite some remarkable results, important factors to optimize their electrical performance with reproducibility and uniformity have not yet been achieved. Here, we newly introduce the strong effects of humidity to enhance the electrical performance of OS TFTs fabricated with the metal aqua complex. Through humidity control during the spin-coating process and annealing process, we successfully demonstrate solution-processed InO x /SiO 2 TFTs with a good electrical uniformity of ∼5% standard deviation, showing high average field-effect mobility of 2.76 cm 2 V -1 s -1 and 15.28 cm 2 V -1 s -1 fabricated at 200 and 250 °C, respectively. Also, on the basis of the systematic analyses, we demonstrate the mechanism for the change in electrical properties of InO x TFTs depending on the humidity control. Finally, on the basis of the mechanism, we extended the humidity control to the fabrication of the AlO x insulator. Subsequently, we successfully achieved humidity-controlled InO x /AlO x TFTs fabricated at 200 °C showing high average field-effect mobility of 9.5 cm 2 V -1 s -1 .

Investigation of thin/well-tunable liquid/gas diffusion layers exhibiting superior multifunctional performance in low-temperature electrolytic water splitting

DOE PAGES

Kang, Zhenye; Mo, Jingke; Yang, Gaoqiang; ...

2016-10-11

Liquid/gas diffusion layers (LGDLs), which are located between the catalyst layer (CL) and bipolar plate (BP), play an important role in enhancing the performance of water splitting in proton exchange membrane electrolyzer cells (PEMECs). They are expected to transport electrons, heat, and reactants/products simultaneously with minimum voltage, current, thermal, interfacial, and fluidic losses. Here in this study, the thin titanium-based LGDLs with straight-through pores and well-defined pore morphologies are comprehensively investigated for the first time. The novel LGDL with a 400 μm pore size and 0.7 porosity achieved a best-ever performance of 1.66 V at 2 A cm -2 andmore » 80 °C, as compared to the published literature. The thin/well-tunable titanium based LGDLs remarkably reduce ohmic and activation losses, and it was found that porosity has a more significant impact on performance than pore size. In addition, an appropriate equivalent electrical circuit model has been established to quantify the effects of pore morphologies. The rapid electrochemical reaction phenomena at the center of the PEMEC are observed by coupling with high-speed and micro-scale visualization systems. Lastly, the observed reactions contribute reasonable and pioneering data that elucidate the effects of porosity and pore size on the PEMEC performance. This study can be a new guide for future research and development towards high-efficiency and low-cost hydrogen energy.« less

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

NASA Astrophysics Data System (ADS)

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

2012-06-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

Thermoelectric studies of nanoporous thin films with adjusted pore-edge charges

NASA Astrophysics Data System (ADS)

Hao, Qing; Zhao, Hongbo; Xu, Dongchao

2017-03-01

In recent years, nanoporous thin films have been widely studied for thermoelectric applications. High thermoelectric performance is reported for nanoporous Si films, which is attributed to the dramatically reduced lattice thermal conductivity and bulk-like electrical properties. Porous materials can also be used in gas sensing applications by engineering the surface-trapped charges on pore edges. In this work, an analytical model is developed to explore the relationship between the thermoelectric properties and pore-edge charges in a periodic two-dimensional nanoporous material. The presented model can be widely used to analyze the measured electrical properties of general nanoporous thin films and two-dimensional materials.

Hydrothermally formed three-dimensional nanoporous Ni(OH)2 thin-film supercapacitors.

PubMed

Yang, Yang; Li, Lei; Ruan, Gedeng; Fei, Huilong; Xiang, Changsheng; Fan, Xiujun; Tour, James M

2014-09-23

A three-dimensional nanoporous Ni(OH)2 thin-film was hydrothermally converted from an anodically formed porous layer of nickel fluoride/oxide. The nanoporous Ni(OH)2 thin-films can be used as additive-free electrodes for energy storage. The nanoporous layer delivers a high capacitance of 1765 F g(-1) under three electrode testing. After assembly with porous activated carbon in asymmetric supercapacitor configurations, the devices deliver superior supercapacitive performances with capacitance of 192 F g(-1), energy density of 68 Wh kg(-1), and power density of 44 kW kg(-1). The wide working potential window (up to 1.6 V in 6 M aq KOH) and stable cyclability (∼90% capacitance retention over 10,000 cycles) make the thin-film ideal for practical supercapacitor devices.

A 350 mK, 9 T scanning tunneling microscope for the study of superconducting thin films on insulating substrates and single crystals.

PubMed

Kamlapure, Anand; Saraswat, Garima; Ganguli, Somesh Chandra; Bagwe, Vivas; Raychaudhuri, Pratap; Pai, Subash P

2013-12-01

We report the construction and performance of a low temperature, high field scanning tunneling microscope (STM) operating down to 350 mK and in magnetic fields up to 9 T, with thin film deposition and in situ single crystal cleaving capabilities. The main focus lies on the simple design of STM head and a sample holder design that allows us to get spectroscopic data on superconducting thin films grown in situ on insulating substrates. Other design details on sample transport, sample preparation chamber, and vibration isolation schemes are also described. We demonstrate the capability of our instrument through the atomic resolution imaging and spectroscopy on NbSe2 single crystal and spectroscopic maps obtained on homogeneously disordered NbN thin film.

Hierarchically Structured Co3O4@Pt@MnO2 Nanowire Arrays for High-Performance Supercapacitors

PubMed Central

Xia, Hui; Zhu, Dongdong; Luo, Zhentao; Yu, Yue; Shi, Xiaoqin; Yuan, Guoliang; Xie, Jianping

2013-01-01

Here we proposed a novel architectural design of a ternary MnO2-based electrode – a hierarchical Co3O4@Pt@MnO2 core-shell-shell structure, where the complemental features of the three key components (a well-defined Co3O4 nanowire array on the conductive Ti substrate, an ultrathin layer of small Pt nanoparticles, and a thin layer of MnO2 nanoflakes) are strategically combined into a single entity to synergize and construct a high-performance electrode for supercapacitors. Owing to the high conductivity of the well-defined Co3O4 nanowire arrays, in which the conductivity was further enhanced by a thin metal (Pt) coating layer, in combination with the large surface area provided by the small MnO2 nanoflakes, the as-fabricated Co3O4@Pt@MnO2 nanowire arrays have exhibited high specific capacitances, good rate capability, and excellent cycling stability. The architectural design demonstrated in this study provides a new approach to fabricate high-performance MnO2–based nanowire arrays for constructing next-generation supercapacitors. PMID:24132040

Fabrication and characteristics of high-performance and high-stability aluminum-doped zinc oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Shan, Dongfang; Han, Dedong; Huang, Fuqing; Tian, Yu; Zhang, Suoming; Qi, Lin; Cong, Yingying; Zhang, Shengdong; Zhang, Xing; Wang, Yi

2014-01-01

Fully transparent aluminum-doped zinc oxide (AZO) thin-film transistors (TFTs) were successfully fabricated on glass substrates at room temperature. Superior properties, such as a high saturation mobility of 59.3 cm2 V-1 s-1, a positive threshold voltage of 1.3 V, a steep subthreshold swing of 122.9 mV/dec, an off-state current on the order of 10-12 A, and an on/off ratio of 2.7 × 108, were obtained. The electrical properties of the AZO TFTs were successively studied within a period of six months. Small property degenerations could be observed from the test results obtained within the study period, which proved the high-performance and high-stability characteristics of AZO TFTs. Furthermore, hysteresis loop scanning of AZO TFTs was performed, and a small hysteresis could be detected in the scanning curves, which suggested the superior properties of a dielectric and a channel-insulator interface. Lastly, we succeeded in manufacturing an organic LED (OLED) flat panel display panel driven by AZO TFTs and obtained an excellent display effect from it. We believe that AZO TFTs are a promising candidate successor to Si-based TFTs in next-generation flat panel displays.

Identification of Ginkgo biloba supplements adulteration using high performance thin layer chromatography and ultra high performance liquid chromatography-diode array detector-quadrupole time of flight-mass spectometry

USDA-ARS?s Scientific Manuscript database

Ginkgo biloba is one of the most widely sold herbal supplements and medicines in the world. Its popularity stems to have a positive effect on memory and the circulatory system in clinical studies. As ginkgo popularity increased, non-proprietary extracts were introduced claiming to have similar phyto...

HPTLC detection of altitudinal variation of the potential antivenin stigmasterol in different populations of the tropical ethnic antidote Rauvolfia serpentina.

PubMed

Dey, Abhijit; Pandey, Devendra Kumar

2014-09-01

To determine the altitudinal variation of stigmasterol, a potential antivenin, in roots from seven populations of Rauvolfia serpentina (L). Benth. ex Kurz. (Apocynaceae) (R. serpentina), an important herb found in Indian subcontinent which has long been used in the treatment of snakebite, blood pressure and schizophrenia. Altitudinal variation of stigmasterol content in R. serpentina roots was analyzed by high performance thin layer chromatography. Chromatography was performed on silica gel 60 F254 thin layer chromatography plates with benzene-acetone 86:14 (v/v) as mobile phase. Densitometric analysis was done at λ=366 nm after derivatization with vanillin-10% (v/v) sulphuric acid alcohol reagent. The method was validated for precision and recovery. The present experiment demonstrates a simple, rapid, precise and sensitive high performance thin layer chromatography protocol for qualitative and quantitative determination of stigmasterol from different populations of R. serpentina. Results demonstrated that in root samples stigmasterol was present at Rf value of 0.44. This investigation demonstrates that stigmasterol content in R. serpentina roots varies in different altitudes. Popular ethnomedicinal use of this herb against snakebite may be contributed by the occurrence of stigmasterol in its roots. Copyright © 2014 Hainan Medical College. Published by Elsevier B.V. All rights reserved.

High-performance, flexible, deployable array development for space applications

NASA Technical Reports Server (NTRS)

Gehling, Russell N.; Armstrong, Joseph H.; Misra, Mohan S.

1994-01-01

Flexible, deployable arrays are an attractive alternative to conventional solar arrays for near-term and future space power applications, particularly due to their potential for high specific power and low storage volume. Combined with low-cost flexible thin-film photovoltaics, these arrays have the potential to become an enabling or an enhancing technology for many missions. In order to expedite the acceptance of thin-film photovoltaics for space applications, however, parallel development of flexible photovoltaics and the corresponding deployable structure is essential. Many innovative technologies must be incorporated in these arrays to ensure a significant performance increase over conventional technologies. For example, innovative mechanisms which employ shape memory alloys for storage latches, deployment mechanisms, and array positioning gimbals can be incorporated into flexible array design with significant improvement in the areas of cost, weight, and reliability. This paper discusses recent activities at Martin Marietta regarding the development of flexible, deployable solar array technology. Particular emphasis is placed on the novel use of shape memory alloys for lightweight deployment elements to improve the overall specific power of the array. Array performance projections with flexible thin-film copper-indium-diselenide (CIS) are presented, and government-sponsored solar array programs recently initiated at Martin Marietta through NASA and Air Force Phillips Laboratory are discussed.

Effect of annealing on optical properties and structure of the vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Zhu, Huiqun; Li, Yi; Li, Yuming; Huang, Yize; Tong, Guoxiang; Fang, Baoying; Zheng, Qiuxin; Li, Liu; Shen, Yujian

2012-10-01

VO2 thin films were prepared on soda-lime glass substrates by DC magnetron sputtering at room temperature using vanadium target and post annealing in air. X-ray diffraction and FTIR spectroscopy analyses showed that the films obtained at the optimized parameters have high VO2 (011) orientation. Both low temperature deposition and post annealing method were beneficial to grow the nano-films with pure VO2 phase-structure and composition. Metalinsulator transition properties of the VO2 films in terms of infrared transmittance, transmittance variation and film thickness were investigated under varying annealing temperature. Results showed that infrared transmittance variation and transition temperature of the nano-films were significantly improved and reduced respectively. Therefore, this study was able to develop practical low-cost preparation methods for high-performance intelligent energy-saving thin films.

High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

PubMed Central

Noviyana, Imas; Lestari, Annisa Dwi; Putri, Maryane; Won, Mi-Sook; Bae, Jong-Seong; Heo, Young-Woo; Lee, Hee Young

2017-01-01

Top-contact bottom-gate thin film transistors (TFTs) with zinc-rich indium zinc tin oxide (IZTO) active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C. PMID:28773058

Simultaneous Quantification of Syringic Acid and Kaempferol in Extracts of Bergenia Species Using Validated High-Performance Thin-Layer Chromatographic-Densitometric Method.

PubMed

Srivastava, Nishi; Srivastava, Amit; Srivastava, Sharad; Rawat, Ajay Kumar Singh; Khan, Abdul Rahman

2016-03-01

A rapid, sensitive, selective and robust quantitative densitometric high-performance thin-layer chromatographic method was developed and validated for separation and quantification of syringic acid (SYA) and kaempferol (KML) in the hydrolyzed extracts of Bergenia ciliata and Bergenia stracheyi. The separation was performed on silica gel 60F254 high-performance thin-layer chromatography plates using toluene : ethyl acetate : formic acid (5 : 4: 1, v/v/v) as the mobile phase. The quantification of SYA and KML was carried out using a densitometric reflection/absorption mode at 290 nm. A dense spot of SYA and KML appeared on the developed plate at a retention factor value of 0.61 ± 0.02 and 0.70 ± 0.01. A precise and accurate quantification was performed using linear regression analysis by plotting the peak area vs concentration 100-600 ng/band (correlation coefficient: r = 0.997, regression coefficient: R(2) = 0.996) for SYA and 100-600 ng/band (correlation coefficient: r = 0.995, regression coefficient: R(2) = 0.991) for KML. The developed method was validated in terms of accuracy, recovery and inter- and intraday study as per International Conference on Harmonisation guidelines. The limit of detection and limit of quantification of SYA and KML were determined, respectively, as 91.63, 142.26 and 277.67, 431.09 ng. The statistical data analysis showed that the method is reproducible and selective for the estimation of SYA and KML in extracts of B. ciliata and B. stracheyi. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Chemically prepared La2Se3 nanocubes thin film for supercapacitor application.

PubMed

Patil, S J; Lokhande, V C; Chodankar, N R; Lokhande, C D

2016-05-01

Lanthanum selenide (La2Se3) nanocubes thin film is prepared via successive ionic layer adsorption and reaction (SILAR) method and utilized for energy storage application. The prepared La2Se3 thin film is characterized by X-ray diffraction, field emission scanning electron microscopy and contact angle measurement techniques for structural, surface morphological and wettability studies, respectively. Energy dispersive X-ray microanalysis (EDAX) is performed in order to obtain the elemental composition of the thin film. The La2Se3 film electrode shows a maximum specific capacitance of 363 F g(-1) in a 0.8 M LiClO4/PC electrolyte at a scan rate of 5 mV s(-1) within 1.3 V/SCE potential range. The specific capacitive retention of 83 % of La2Se3 film electrode is obtained over 1000 cyclic voltammetry cycles. The predominant performance, such as high energy (80 Wh kg(-1)) and power density (2.5 kW kg(-1)), indicates that La2Se3 film electrode facilitates fast ion diffusion during redox processes. Copyright © 2016 Elsevier Inc. All rights reserved.

Out-of-plane easy-axis in thin films of diluted magnetic semiconductor Ba1-xKx(Zn1-yMny)2As2

NASA Astrophysics Data System (ADS)

Wang, R.; Huang, Z. X.; Zhao, G. Q.; Yu, S.; Deng, Z.; Jin, C. Q.; Jia, Q. J.; Chen, Y.; Yang, T. Y.; Jiang, X. M.; Cao, L. X.

2017-04-01

Single-phased, single-oriented thin films of Mn-doped ZnAs-based diluted magnetic semiconductor (DMS) Ba1-xKx(Zn1-yMny)2As2 (x = 0.03, 0.08; y = 0.15) have been deposited on Si, SrTiO3, LaAlO3, (La,Sr)(Al,Ta)O3, and MgAl2O4 substrates, respectively. Utilizing a combined synthesis and characterization system excluding the air and further optimizing the deposition parameters, high-quality thin films could be obtained and be measured showing that they can keep inactive-in-air up to more than 90 hours characterized by electrical transport measurements. In comparison with films of x = 0.03 which possess relatively higher resistivity, weaker magnetic performances, and larger energy gap, thin films of x = 0.08 show better electrical and magnetic performances. Strong magnetic anisotropy was found in films of x = 0.08 grown on (La,Sr)(Al,Ta)O3 substrate with their magnetic polarization aligned almost solely on the film growth direction.

Characterization of PET preforms using spectral domain optical coherence tomography

NASA Astrophysics Data System (ADS)

Hosseiny, Hamid; Ferreira, Manuel João.; Martins, Teresa; Carmelo Rosa, Carla

2013-11-01

Polyethylene terephthalate (PET) preforms are massively produced nowadays with the purpose of producing food and beverages packaging and liquid containers. Some varieties of these preforms are produced as multilayer structures, where very thin inner film(s) act as a barrier for nutrients leakage. The knowledge of the thickness of this thin inner layer is important in the production line. The quality control of preforms production requires a fast approach and normally the thickness control is performed by destructive means out of the production line. A spectral domain optical coherence tomography (SD-OCT) method was proposed to examine the thin layers in real time. This paper describes a nondestructive approach and all required signal processing steps to characterize the thin inner layers and also to improve the imaging speed and the signal to noise ratio. The algorithm was developed by using graphics processing unit (GPU) with computer unified device architecture (CUDA). This GPU-accelerated white light interferometry technique nondestructively assesses the samples and has high imaging speed advantage, overcoming the bottlenecks in PET performs quality control.

Solvent effects of a dimethyldicyanoquinonediimine buffer layer as N-type material on the performance of organic photovoltaic cells.

PubMed

Yang, Eui Yeol; Oh, Se Young

2014-08-01

In the present work, we have fabricated organic photovoltaic cells consisting of ITO/PEDOT:PSS/P3HT:PCBM/DMDCNQI/Al using a dip-coating method with various solvent systems. We have investigated solvent effects (such as solubility, viscosity and vapor pressure) in deposition of a thin DMDCNQI buffer layer on the performance of organic photovoltaic cells. The solvent system which had low viscosity and good solubility properties, made a dense and uniform DMDCNQI ultra thin film, resulting in a high performance device. In particular, a prepared organic photovoltaic cell was fabricated using a cosolvent system (methanol:methylenechloride = 3:1) and showed a maximum power conversion efficiency of 4.53%.

Performance improvement of organic thin film transistors by using active layer with sandwich structure

NASA Astrophysics Data System (ADS)

Ni, Yao; Zhou, Jianlin; Kuang, Peng; Lin, Hui; Gan, Ping; Hu, Shengdong; Lin, Zhi

2017-08-01

We report organic thin film transistors (OTFTs) with pentacene/fluorinated copper phthalo-cyanine (F16CuPc)/pentacene (PFP) sandwich configuration as active layers. The sandwich devices not only show hole mobility enhancement but also present a well control about threshold voltage and off-state current. By investigating various characteristics, including current-voltage hysteresis, organic film morphology, capacitance-voltage curve and resistance variation of active layers carefully, it has been found the performance improvement is mainly attributed to the low carrier traps and the higher conductivity of the sandwich active layer due to the additional induced carriers in F16CuPc/pentacene. Therefore, using proper multiple active layer is an effective way to gain high performance OTFTs.

MISSE 5 Thin Films Space Exposure Experiment

NASA Technical Reports Server (NTRS)

Harvey, Gale A.; Kinard, William H.; Jones, James L.

2007-01-01

The Materials International Space Station Experiment (MISSE) is a set of space exposure experiments using the International Space Station (ISS) as the flight platform. MISSE 5 is a co-operative endeavor by NASA-LaRC, United Stated Naval Academy, Naval Center for Space Technology (NCST), NASA-GRC, NASA-MSFC, Boeing, AZ Technology, MURE, and Team Cooperative. The primary experiment is performance measurement and monitoring of high performance solar cells for U.S. Navy research and development. A secondary experiment is the telemetry of this data to ground stations. A third experiment is the measurement of low-Earth-orbit (LEO) low-Sun-exposure space effects on thin film materials. Thin films can provide extremely efficacious thermal control, designation, and propulsion functions in space to name a few applications. Solar ultraviolet radiation and atomic oxygen are major degradation mechanisms in LEO. This paper is an engineering report of the MISSE 5 thm films 13 months space exposure experiment.

Development of an ultra-thin film comprised of a graphene membrane and carbon nanotube vein support.

PubMed

Lin, Xiaoyang; Liu, Peng; Wei, Yang; Li, Qunqing; Wang, Jiaping; Wu, Yang; Feng, Chen; Zhang, Lina; Fan, Shoushan; Jiang, Kaili

2013-01-01

Graphene, exhibiting superior mechanical, thermal, optical and electronic properties, has attracted great interest. Considering it being one-atom-thick, and the reduced mechanical strength at grain boundaries, the fabrication of large-area suspended chemical vapour deposition graphene remains a challenge. Here we report the fabrication of an ultra-thin free-standing carbon nanotube/graphene hybrid film, inspired by the vein-membrane structure found in nature. Such a square-centimetre-sized hybrid film can realize the overlaying of large-area single-layer chemical vapour deposition graphene on to a porous vein-like carbon nanotube network. The vein-membrane-like hybrid film, with graphene suspended on the carbon nanotube meshes, possesses excellent mechanical performance, optical transparency and good electrical conductivity. The ultra-thin hybrid film features an electron transparency close to 90%, which makes it an ideal gate electrode in vacuum electronics and a high-performance sample support in transmission electron microscopy.

Nanogenerator-based dual-functional and self-powered thin patch loudspeaker or microphone for flexible electronics.

PubMed

Li, Wei; Torres, David; Díaz, Ramón; Wang, Zhengjun; Wu, Changsheng; Wang, Chuan; Lin Wang, Zhong; Sepúlveda, Nelson

2017-05-16

Ferroelectret nanogenerators were recently introduced as a promising alternative technology for harvesting kinetic energy. Here we report the device's intrinsic properties that allow for the bidirectional conversion of energy between electrical and mechanical domains; thus extending its potential use in wearable electronics beyond the power generation realm. This electromechanical coupling, combined with their flexibility and thin film-like form, bestows dual-functional transducing capabilities to the device that are used in this work to demonstrate its use as a thin, wearable and self-powered loudspeaker or microphone patch. To determine the device's performance and applicability, sound pressure level is characterized in both space and frequency domains for three different configurations. The confirmed device's high performance is further validated through its integration in three different systems: a music-playing flag, a sound recording film and a flexible microphone for security applications.

Nanogenerator-based dual-functional and self-powered thin patch loudspeaker or microphone for flexible electronics

NASA Astrophysics Data System (ADS)

Li, Wei; Torres, David; Díaz, Ramón; Wang, Zhengjun; Wu, Changsheng; Wang, Chuan; Lin Wang, Zhong; Sepúlveda, Nelson

2017-05-01

Ferroelectret nanogenerators were recently introduced as a promising alternative technology for harvesting kinetic energy. Here we report the device's intrinsic properties that allow for the bidirectional conversion of energy between electrical and mechanical domains; thus extending its potential use in wearable electronics beyond the power generation realm. This electromechanical coupling, combined with their flexibility and thin film-like form, bestows dual-functional transducing capabilities to the device that are used in this work to demonstrate its use as a thin, wearable and self-powered loudspeaker or microphone patch. To determine the device's performance and applicability, sound pressure level is characterized in both space and frequency domains for three different configurations. The confirmed device's high performance is further validated through its integration in three different systems: a music-playing flag, a sound recording film and a flexible microphone for security applications.

Titanyl phthalocyanine ambipolar thin film transistors making use of carbon nanotube electrodes

NASA Astrophysics Data System (ADS)

Coppedè, Nicola; Valitova, Irina; Mahvash, Farzaneh; Tarabella, Giuseppe; Ranzieri, Paolo; Iannotta, Salvatore; Santato, Clara; Martel, Richard; Cicoira, Fabio

2014-12-01

The capability of efficiently injecting charge carriers into organic films and finely tuning their morphology and structure is crucial to improve the performance of organic thin film transistors (OTFTs). In this work, we investigate OTFTs employing carbon nanotubes (CNTs) as the source-drain electrodes and, as the organic semiconductor, thin films of titanyl phthalocyanine (TiOPc) grown by supersonic molecular beam deposition (SuMBD). While CNT electrodes have shown an unprecedented ability to improve charge injection in OTFTs, SuMBD is an effective technique to tune film morphology and structure. Varying the substrate temperature during deposition, we were able to grow both amorphous (low substrate temperature) and polycrystalline (high substrate temperature) films of TiOPc. Regardless of the film morphology and structure, CNT electrodes led to superior charge injection and transport performance with respect to benchmark Au electrodes. Vacuum annealing of polycrystalline TiOPc films with CNT electrodes yielded ambipolar OTFTs.

Investigation of nanoporous platinum thin films fabricated by reactive sputtering: Application as micro-SOFC electrode

NASA Astrophysics Data System (ADS)

Jung, WooChul; Kim, Jae Jin; Tuller, Harry L.

2015-02-01

Highly porous Pt thin films, with nano-scale porosity, were fabricated by reactive sputtering. The strategy involved deposition of thin film PtOx at room temperature, followed by the subsequent decomposition of the oxide by rapid heat treatment. The resulting films exhibited percolating Pt networks infiltrated with interconnected nanosized pores, critical for superior solid oxide fuel cell cathode performance. This approach is particularly attractive for micro-fabricated solid oxide fuel cells, since it enables fabrication of the entire cell stack (anode/electrolyte/cathode) within the sputtering chamber, without breaking vacuum. In this work, the morphological, crystallographic and chemical properties of the porous electrode were systematically varied by control of deposition conditions. Oxygen reduction reaction kinetics were investigated by means of electrochemical impedance spectroscopy, demonstrating the critical role of nano-pores in achieving satisfactory micro-SOFC cathode performance.

Two-dimensional high efficiency thin-film silicon solar cells with a lateral light trapping architecture.

PubMed

Fang, Jia; Liu, Bofei; Zhao, Ying; Zhang, Xiaodan

2014-08-22

Introducing light trapping structures into thin-film solar cells has the potential to enhance their solar energy harvesting as well as the performance of the cells; however, current strategies have been focused mainly on harvesting photons without considering the light re-escaping from cells in two-dimensional scales. The lateral out-coupled solar energy loss from the marginal areas of cells has reduced the electrical yield indeed. We therefore herein propose a lateral light trapping structure (LLTS) as a means of improving the light-harvesting capacity and performance of cells, achieving a 13.07% initial efficiency and greatly improved current output of a-Si:H single-junction solar cell based on this architecture. Given the unique transparency characteristics of thin-film solar cells, this proposed architecture has great potential for integration into the windows of buildings, microelectronics and other applications requiring transparent components.

Nanogenerator-based dual-functional and self-powered thin patch loudspeaker or microphone for flexible electronics

PubMed Central

Li, Wei; Torres, David; Díaz, Ramón; Wang, Zhengjun; Wu, Changsheng; Wang, Chuan; Lin Wang, Zhong; Sepúlveda, Nelson

2017-01-01

Ferroelectret nanogenerators were recently introduced as a promising alternative technology for harvesting kinetic energy. Here we report the device's intrinsic properties that allow for the bidirectional conversion of energy between electrical and mechanical domains; thus extending its potential use in wearable electronics beyond the power generation realm. This electromechanical coupling, combined with their flexibility and thin film-like form, bestows dual-functional transducing capabilities to the device that are used in this work to demonstrate its use as a thin, wearable and self-powered loudspeaker or microphone patch. To determine the device's performance and applicability, sound pressure level is characterized in both space and frequency domains for three different configurations. The confirmed device's high performance is further validated through its integration in three different systems: a music-playing flag, a sound recording film and a flexible microphone for security applications. PMID:28508862

Study on the Hydrogenated ZnO-Based Thin Film Transistors. Part 1

DTIC Science & Technology

2011-04-30

IGZO film on the performance of thin film transistors 5 Chapter 2. Hydrogenation of a- IGZO channel layer in the thin film transistors 12...effect of substrate temperature during the deposition of a- IGZO film on the performance of thin film transistors Introduction The effect of substrate...temperature during depositing IGZO channel layer on the performance of amorphous indium-gallium-zinc oxide (a- IGZO

Enhanced performance of amorphous In-Ga-Zn-O thin-film transistors using different metals for source/drain electrodes

NASA Astrophysics Data System (ADS)

Pyo, Ju-Young; Cho, Won-Ju

2017-09-01

In this paper, we propose an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with off-planed source/drain electrodes. We applied different metals for the source/drain electrodes with Ni and Ti to control the work function as high and low. When we measured the configuration of Ni to drain and source to Ti, the a-IGZO TFT showed increased driving current, decreased leakage current, a high on/off current ratio, low subthreshold swing, and high mobility. In addition, we conducted a reliability test with a gate bias stress test at various temperatures. The results of the reliability test showed the Ni drain and Ti drain had an equivalent effective energy barrier height. Thus, we confirmed that the proposed off-planed structure improved the electrical characteristics of the fabricated devices without any degradation of characteristics. Through the a-IGZO TFT with different source/drain electrode metal engineering, we realized high-performance TFTs for next-generation display devices.

High-throughput heterodyne thermoreflectance: Application to thermal conductivity measurements of a Fe-Si-Ge thin film alloy library.

PubMed

d'Acremont, Quentin; Pernot, Gilles; Rampnoux, Jean-Michel; Furlan, Andrej; Lacroix, David; Ludwig, Alfred; Dilhaire, Stefan

2017-07-01

A High-Throughput Time-Domain ThermoReflectance (HT-TDTR) technique was developed to perform fast thermal conductivity measurements with minimum user actions required. This new setup is based on a heterodyne picosecond thermoreflectance system. The use of two different laser oscillators has been proven to reduce the acquisition time by two orders of magnitude and avoid the experimental artefacts usually induced by moving the elements present in TDTR systems. An amplitude modulation associated to a lock-in detection scheme is included to maintain a high sensitivity to thermal properties. We demonstrate the capabilities of the HT-TDTR setup to perform high-throughput thermal analysis by mapping thermal conductivity and interface resistances of a ternary thin film silicide library Fe x Si y Ge 100-x-y (20

Ultra-stretchable and skin-mountable strain sensors using carbon nanotubes-Ecoflex nanocomposites.

PubMed

Amjadi, Morteza; Yoon, Yong Jin; Park, Inkyu

2015-09-18

Super-stretchable, skin-mountable, and ultra-soft strain sensors are presented by using carbon nanotube percolation network-silicone rubber nanocomposite thin films. The applicability of the strain sensors as epidermal electronic systems, in which mechanical compliance like human skin and high stretchability (ϵ > 100%) are required, has been explored. The sensitivity of the strain sensors can be tuned by the number density of the carbon nanotube percolation network. The strain sensors show excellent hysteresis performance at different strain levels and rates with high linearity and small drift. We found that the carbon nanotube-silicone rubber based strain sensors possess super-stretchability and high reliability for strains as large as 500%. The nanocomposite thin films exhibit high robustness and excellent resistance-strain dependency for over ~1380% mechanical strain. Finally, we performed skin motion detection by mounting the strain sensors on different parts of the body. The maximum induced strain by the bending of the finger, wrist, and elbow was measured to be ~ 42%, 45% and 63%, respectively.

Layered conductive polymer on nylon membrane templates for high performance, thin-film supercapacitor electrodes

NASA Astrophysics Data System (ADS)

Shi, HaoTian Harvey; Naguib, Hani E.

2016-04-01

Flexible Thin-film Electrochemical Capacitors (ECs) are emerging technology that plays an important role as energy supply for various electronics system for both present era and the future. Intrinsically conductive polymers (ICPs) are promising pseudo-capacitive materials as they feature both good electrical conductivity and high specific capacitance. This study focuses on the construction and characterization of ultra-high surface area porous electrodes based on coating of nano-sized conductive polymer materials on nylon membrane templates. Herein, a novel nano-engineered electrode material based on nylon membranes was presented, which allows the creation of super-capacitor devices that is capable of delivering competitive performance, while maintaining desirable mechanical characteristics. With the formation of a highly conductive network with the polyaniline nano-layer, the electrical conductivity was also increased dramatically to facilitate the charge transfer process. Cyclic voltammetry and specific capacitance results showed promising application of this type of composite materials for future smart textile applications.

Doubling the critical current density in superconducting FeSe 0.5Te 0.5 thin films by low temperature oxygen annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Cheng; Si, Weidong; Li, Qiang

Iron chalcogenide superconducting thin films and coated conductors are attractive for potential high field applications at liquid helium temperature for their high critical current densities J c, low anisotropies, and relatively strong grain couplings. Embedding flux pinning defects is a general approach to increase the in-field performance of superconductors. However, many effective pinning defects can adversely affect the zero field or self-field J c, particularly in cuprate high temperature superconductors. Here, we report the doubling of the self-field J c in FeSe 0.5Te 0.5 films by low temperature oxygen annealing, reaching ~3 MA/cm 2. In-field performance is also dramatically enhanced.more » In conclusion, our results demonstrate that low temperature oxygen annealing is a simple and cost-efficient post-treatment technique which can greatly help to accelerate the potential high field applications of the iron-based superconductors.« less

High-throughput heterodyne thermoreflectance: Application to thermal conductivity measurements of a Fe-Si-Ge thin film alloy library

NASA Astrophysics Data System (ADS)

d'Acremont, Quentin; Pernot, Gilles; Rampnoux, Jean-Michel; Furlan, Andrej; Lacroix, David; Ludwig, Alfred; Dilhaire, Stefan

2017-07-01

A High-Throughput Time-Domain ThermoReflectance (HT-TDTR) technique was developed to perform fast thermal conductivity measurements with minimum user actions required. This new setup is based on a heterodyne picosecond thermoreflectance system. The use of two different laser oscillators has been proven to reduce the acquisition time by two orders of magnitude and avoid the experimental artefacts usually induced by moving the elements present in TDTR systems. An amplitude modulation associated to a lock-in detection scheme is included to maintain a high sensitivity to thermal properties. We demonstrate the capabilities of the HT-TDTR setup to perform high-throughput thermal analysis by mapping thermal conductivity and interface resistances of a ternary thin film silicide library FexSiyGe100-x-y (20

Doubling the critical current density in superconducting FeSe 0.5Te 0.5 thin films by low temperature oxygen annealing

DOE PAGES

Zhang, Cheng; Si, Weidong; Li, Qiang

2016-11-14

Iron chalcogenide superconducting thin films and coated conductors are attractive for potential high field applications at liquid helium temperature for their high critical current densities J c, low anisotropies, and relatively strong grain couplings. Embedding flux pinning defects is a general approach to increase the in-field performance of superconductors. However, many effective pinning defects can adversely affect the zero field or self-field J c, particularly in cuprate high temperature superconductors. Here, we report the doubling of the self-field J c in FeSe 0.5Te 0.5 films by low temperature oxygen annealing, reaching ~3 MA/cm 2. In-field performance is also dramatically enhanced.more » In conclusion, our results demonstrate that low temperature oxygen annealing is a simple and cost-efficient post-treatment technique which can greatly help to accelerate the potential high field applications of the iron-based superconductors.« less

High throughput manufacturing of thin-film CdTe photovoltaic modules. Annual subcontract report, 16 November 1993--15 November 1994

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sandwisch, D W

1995-11-01

This report describes work performed by Solar Cells, Inc. (SCI), under a 3-year subcontract to advance SCI`s PV manufacturing technologies, reduce module production costs, increase module performance, and provide the groundwork for SCI to expand its commercial production capacities. SCI will meet these objectives in three phases by designing, debugging, and operating a 20-MW/year, automated, continuous PV manufacturing line that produces 60-cm {times} 120-cm thin-film CdTe PV modules. This report describes tasks completed under Phase 1 of the US Department of Energy`s PV Manufacturing Technology program.

High-performance perovskite CH3NH3PbI3 thin films for solar cells prepared by single-source physical vapour deposition

PubMed Central

Fan, Ping; Gu, Di; Liang, Guang-Xing; Luo, Jing-Ting; Chen, Ju-Long; Zheng, Zhuang-Hao; Zhang, Dong-Ping

2016-01-01

In this work, an alternative route to fabricating high-quality CH3NH3PbI3 thin films is proposed. Single-source physical vapour deposition (SSPVD) without a post-heat-treating process was used to prepare CH3NH3PbI3 thin films at room temperature. This new process enabled complete surface coverage and moisture stability in a non-vacuum solution. Moreover, the challenges of simultaneously controlling evaporation processes of the organic and inorganic sources via dual-source vapour evaporation and the heating process required to obtain high crystallization were avoided. Excellent composition with stoichiometry transferred from the powder material, a high level of tetragonal phase-purity, full surface coverage, well-defined grain structure, high crystallization and reproducibility were obtained. A PCE of approximately 10.90% was obtained with a device based on SSPVD CH3NH3PbI3. These initial results suggest that SSPVD is a promising method to significantly optimize perovskite CH3NH3PbI3 solar cell efficiency. PMID:27426686

Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kizu, Takio, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Tsukagoshi, Kazuhito, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp

2015-09-28

Using practical high-density sputtering targets, we investigated the effect of Zn and W codoping on the thermal stability of the amorphous film and the electrical characteristics in thin film transistors. zinc oxide is a potentially conductive component while W oxide is an oxygen vacancy suppressor in oxide films. The oxygen vacancy from In-O and Zn-O was suppressed by the W additive because of the high oxygen bond dissociation energy. With controlled codoping of W and Zn, we demonstrated a high mobility with a maximum mobility of 40 cm{sup 2}/V s with good stability under a negative bias stress in InWZnO thinmore » film transistors.« less

High Power Laser Welding. [of stainless steel and titanium alloy structures

NASA Technical Reports Server (NTRS)

Banas, C. M.

1972-01-01

A review of recent developments in high power, carbon dixoide laser welding is presented. Deep penetration welding in stainless steel to 0.5-in. thick, high speed welding in thin gage rimmed steel and gas shielded welding in Ti-6Al-4V alloy are described. The effects of laser power, power density, focusing optics, gas-shielding techniques, material properties and weld speed on weld quality and penetration are discussed. It is shown that laser welding performance in thin materials is comparable to that of electron beams. It is further shown that high quality welds, as evidenced by NDT, mechanical and metal-lographic tests, can be achieved. The potential of the laser for industrial welding applications is indicated.

All-Printed, Foldable Organic Thin-Film Transistors on Glassine Paper.

PubMed

Hyun, Woo Jin; Secor, Ethan B; Rojas, Geoffrey A; Hersam, Mark C; Francis, Lorraine F; Frisbie, C Daniel

2015-11-25

All-printed, foldable organic thin-film transistors are demonstrated on glassine paper with a combination of advanced materials and processing techniques. Glassine paper provides a suitable surface for high-performance printing methods, while graphene electrodes and an ion-gel gate dielectric enable robust stability over 100 folding cycles. Altogether, this study features a practical platform for low-cost, large-area, and foldable electronics. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Sequentially evaporated thin film YBa2Cu3O(7-x) superconducting microwave ring resonator

NASA Technical Reports Server (NTRS)

Rohrer, Norman J.; To, Hing Y.; Valco, George J.; Bhasin, Kul B.; Chorey, Chris; Warner, Joseph D.

1990-01-01

There is great interest in the application of thin film high temperature superconductors in high frequency electronic circuits. A ring resonator provides a good test vehicle for assessing the microwave losses in the superconductor and for comparing films made by different techniques. Ring resonators made of YBa2Cu3O(7-x) have been investigated on LaAlO3 substrates. The superconducting thin films were deposited by sequential electron beam evaporation of Cu, Y, and BaF2 with a post anneal. Patterning of the superconducting film was done using negative photolithography. A ring resonator was also fabricated from a thin gold film as a control. Both resonators had a gold ground plane on the backside of the substrate. The ring resonators' reflection coefficients were measured as a function of frequency from 33 to 37 GHz at temperatures ranging from 20 K to 68 K. The resonator exhibited two resonances which were at 34.5 and 35.7 GHz at 68 K. The resonant frequencies increased with decreasing temperature. The magnitude of the reflection coefficients was in the calculation of the unloaded Q-values. The performance of the evaporated and gold resonator are compared with the performance of a laser ablated YBa2Cu3O(7-x) resonator. The causes of the double resonance are discussed.

Oxygen content modulation by nanoscale chemical and electrical patterning in epitaxial SrCoO3-δ (0 < δ ≤ 0.5) thin films.

PubMed

Hu, S; Seidel, J

2016-08-12

Fast controllable redox reactions in solid materials at room temperature are a promising strategy for enhancing the overall performance and lifetime of many energy technology materials and devices. Easy control of oxygen content is a key concept for the realisation of fast catalysis and bulk diffusion at room temperature. Here, high quality epitaxial brownmillerite SrCoO2.5 thin films have been oxidised to perovskite (P) SrCoO3 with NaClO. X-ray diffraction, scanning probe microscopy and x-ray photoelectron spectroscopy measurements were performed to investigate the structural and electronic changes of the material. The oxidised thin films were found to exhibit distinct morphological changes from an atomically flat terrace structure to forming small nanosized islands with boundaries preferentially in [100] or [010] directions all over the surface, relaxing the in-plane strain imposed by the substrate. The conductivity, or oxygen content, of each single island is confined by these textures, which can be locally patterned even further with electric poling. The high charging level at the island boundaries indicates a magnified electric capacity of SCO thin films, which could be exploited in future device geometries. This finding represents a new way of oxygen modulation with associated self-assembled charge confinement to nanoscale boundaries, offering interesting prospects in nanotechnology applications.

Oxygen content modulation by nanoscale chemical and electrical patterning in epitaxial SrCoO3-δ (0 < δ ≤ 0.5) thin films

NASA Astrophysics Data System (ADS)

Hu, S.; Seidel, J.

2016-08-01

Fast controllable redox reactions in solid materials at room temperature are a promising strategy for enhancing the overall performance and lifetime of many energy technology materials and devices. Easy control of oxygen content is a key concept for the realisation of fast catalysis and bulk diffusion at room temperature. Here, high quality epitaxial brownmillerite SrCoO2.5 thin films have been oxidised to perovskite (P) SrCoO3 with NaClO. X-ray diffraction, scanning probe microscopy and x-ray photoelectron spectroscopy measurements were performed to investigate the structural and electronic changes of the material. The oxidised thin films were found to exhibit distinct morphological changes from an atomically flat terrace structure to forming small nanosized islands with boundaries preferentially in [100] or [010] directions all over the surface, relaxing the in-plane strain imposed by the substrate. The conductivity, or oxygen content, of each single island is confined by these textures, which can be locally patterned even further with electric poling. The high charging level at the island boundaries indicates a magnified electric capacity of SCO thin films, which could be exploited in future device geometries. This finding represents a new way of oxygen modulation with associated self-assembled charge confinement to nanoscale boundaries, offering interesting prospects in nanotechnology applications.

Advanced high-temperature batteries

NASA Technical Reports Server (NTRS)

Nelson, P. A.

1989-01-01

Recent results for Li-Al/FeS2 cells and bipolar battery design have shown the possibility of achieving high specific energy (210 Wh/kg) and high specific power (239 W/kg) at the cell level for an electric vehicle application. Outstanding performance is also projected for sodium/metal chloride cells having large electrolyte areas and thin positive electrodes.

Processing-structure-property relationships of carbon nanotube and nanoplatelet enabled piezoresistive sensors

NASA Astrophysics Data System (ADS)

Luo, Sida

Individual carbon nanotubes (CNTs) possess excellent piezoresistive performance, which is manifested by the significant electrical resistance change when subject to mechanical deformation. In comparison to individual CNTs, the CNT thin films, formed by a random assembly of individual tubes or bundles, show much lower piezoresistive sensitivity. Given the progress made to date in developing CNT ensemble based-piezoresistive sensors, the related piezoresistive mechanism(s) are still not well understood. The crucial step to obtain a better understanding of this issue is to study the effects of CNT structure in the dispersion on the piezoresistivity of CNT ensemble based-piezoresistive sensors. To reach this goal, my Ph.D. research first focuses on establishing the processing-structure-property relationship of SWCNT thin film piezoresistive sensors. The key accomplishment contains: 1) developing the combined preparative ultracentrifuge method (PUM) and dynamic light scattering (DLS) method to quantitatively characterized SWCNT particle size in dispersions under various sonication conditions; 2) designing combined ultrasonication and microfluidization processing protocol for high throughput and large-scale production of high quality SWCNT dispersions; 3) fabricating varied SWCNT thin film piezoresistive sensors through spray coating technique and immersion-drying post-treatment; and 4) investigating the effect of microstructures of SWCNTs on piezoresistivity of SWCNT thin film sensors. This experimental methodology for quantitative and systematic investigation of the processing-structure-property relationships provides a means for the performance optimization of CNT ensemble based piezoresistive sensors. As a start to understand the piezoresistive mechanism, the second focus of my Ph.D. research is studying charge transport behaviors in SWCNT thin films. It was found that the temperature-dependent sheet resistance of SWCNT thin films could be explained by a 3D variable range hopping (3D-VRH) model. More importantly, a strong correlation between the length of SWCNTs and the VRH parameter T0, indicating the degree of disorder of the electronic system, has been identified. With the structure dependent transport mechanism study, a very interesting topic - how T0 changes when SWCNT thin film is under a mechanical deformation, would be helpful for better understanding the piezoresistive mechanism of SWCNT thin film sensors. As demonstrated in transport mechanism study, SWCNT thin film exhibits a negative temperature coefficient (NTC) of resistance. In contrast, another family of carbon nanomaterials, graphite nanoplatelets (GNPs), shows positive temperature coefficient (PTC) of resistance, attributed to their metallic nature. Therefore, upon a wise selection of mass ratio of SWCNTs to GNPs for fabrication of hybrid SWCNT/GNP thin film piezoresistive sensors, a near zero temperature coefficients of resistance in a broad temperature range has been achieved. This unique self-temperature compensation feature along with the high sensitivity of SWCNT/GNP hybrid sensors provides them a vantage for readily and accurately measuring the strain/stress levels in different conditions. With the unique features of SWCNT/GNP hybrid thin film sensors, my future work will focus on application exploration on SWCNT/GNP thin film sensor based devices. For example, we have demonstrated that it is potential for man-machine interaction and body monitoring when coating the hybrid sensor on highly stretchable nitrile glove. The structure health monitoring (SHM) of composite materials could also be realized by coating the thin film sensor on a glass fiber surface and then embedding the fiber sensor in composite structure.

A room temperature strategy towards enhanced performance and bias stability of oxide thin film transistor with a sandwich structure channel layer

NASA Astrophysics Data System (ADS)

Zeng, Yong; Ning, Honglong; Zheng, Zeke; Zhang, Hongke; Fang, Zhiqiang; Yao, Rihui; Xu, Miao; Wang, Lei; Lan, Linfeng; Peng, Junbiao; Lu, Xubing

2017-04-01

Thermal annealing is a conventional and effective way to improve the bias stress stability of oxide thin film transistors (TFT) on solid substrates. However, it is still a challenge for enhancing the bias stress stability of oxide TFTs on flexible substrates by high-temperature post-treatment due to the thermal sensitivity of flexible substrates. Here, a room temperature strategy is presented towards enhanced performance and bias stability of oxide TFTs by intentionally engineering a sandwich structure channel layer consisting of a superlattice with aluminum doped zinc oxide (AZO) and Al2O3 thin films. The Al2O3/AZO/Al2O3-TFTs not only exhibit a saturation mobility of 9.27 cm2 V-1 s-1 and a linear mobility of 11.38 cm2 V-1 s-1 but also demonstrate a better bias stress stability than AZO/Al2O3-TFT. Moreover, the underlying mechanism of this enhanced electrical performance of TFTs with a sandwich structure channel layer is that the bottom Al2O3 thin films can obviously improve the crystalline phase of AZO films while decreasing electrical trapping centers and adsorption sites for undesirable molecules such as water and oxygen.

Fabrication of nanostructured CIGS solar cells

NASA Astrophysics Data System (ADS)

Zhang, Hongwang; Wang, Fang; Parry, James; Perera, Samanthe; Zeng, Hao

2012-02-01

We present the work on Cu(In,Ga)(Se,S)2 based nanostructured solar cells based on nanowire arrays. CIGS as the light absorber for thin-film solar cells has been widely studied recently, due to its high absorption coefficient, long-term stability, and low-cost of fabrication. Recently, solution phase processed CIGS thin film solar cells attracted great attention due to their extremely low fabrication cost. However, the performance is lower than vacuum based thin films possibly due to higher density of defects and lower carrier mobility. On the other hand, one dimensional ordered nanostructures such as nanowires and nanorods can be used to make redial junction solar cells, where the orthogonality between light absorption and charge carrier separation can lead to enhanced PV performance. Since the charge carriers only need to traverse a short distance in the radial direction before they are separated at the heterojunction interface, the radial junction scheme can be more defect tolerant than their planar junction scheme. In this work, a wide band gap nanowire or nanotube array such as TiO2 is used as a scaffold where CIGS is conformally coated using solution phase to obtain a radial heterojunction solar cell. Their performance is compared that of the planar thin film solar cells fabricated with the same materials.

Bending impact on the performance of a flexible Li4Ti5O12-based all-solid-state thin-film battery.

PubMed

Sepúlveda, Alfonso; Speulmanns, Jan; Vereecken, Philippe M

2018-01-01

The growing demand of flexible electronic devices is increasing the requirements of their power sources. The effect of bending in thin-film batteries is still not well understood. Here, we successfully developed a high active area flexible all-solid-state battery as a model system that consists of thin-film layers of Li 4 Ti 5 O 12 , LiPON, and Lithium deposited on a novel flexible ceramic substrate. A systematic study on the bending state and performance of the battery is presented. The battery withstands bending radii of at least 14 mm achieving 70% of the theoretical capacity. Here, we reveal that convex bending has a positive effect on battery capacity showing an average increase of 5.5%, whereas concave bending decreases the capacity by 4% in contrast with recent studies. We show that the change in capacity upon bending may well be associated to the Li-ion diffusion kinetic change through the electrode when different external forces are applied. Finally, an encapsulation scheme is presented allowing sufficient bending of the device and operation for at least 500 cycles in air. The results are meant to improve the understanding of the phenomena present in thin-film batteries while undergoing bending rather than showing improvements in battery performance and lifetime.

Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition.

PubMed

Li, Yang; Yao, Rui; Wang, Huanhuan; Wu, Xiaoming; Wu, Jinzhu; Wu, Xiaohong; Qin, Wei

2017-04-05

Highly conductive and optical transparent Al-doped ZnO (AZO) thin film composed of ZnO with a Zn-Al-O interface was fabricated by thermal atomic layer deposition (ALD) method. The as-prepared AZO thin film exhibits excellent electrical and optical properties with high stability and compatibility with temperature-sensitive flexible photoelectronic devices; film resistivity is as low as 5.7 × 10 -4 Ω·cm, the carrier concentration is high up to 2.2 × 10 21 cm -3 . optical transparency is greater than 80% in a visible range, and the growth temperature is below 150 °C on the PEN substrate. Compared with the conventional AZO film containing by a ZnO-Al 2 O 3 interface, we propose that the underlying mechanism of the enhanced electrical conductivity for the current AZO thin film is attributed to the oxygen vacancies deficiency derived from the free competitive growth mode of Zn-O and Al-O bonds in the Zn-Al-O interface. The flexible transparent transistor based on this AZO electrode exhibits a favorable threshold voltage and I on /I off ratio, showing promising for use in high-resolution, fully transparent, and flexible display applications.

An investigation of material properties and tribological performance of magnetron sputtered thin film coatings

NASA Astrophysics Data System (ADS)

Singh, Harpal

This dissertation is divided into two categories based upon lubrication functionality and its application. The categories are: Dry film lubrication and Fluid film lubrication with thin film coatings. Thin film coatings examined in this work were deposited using closed field unbalanced magnetron sputtering and RF-DC coupled magnetron sputtering systems. In Dry/Solid film lubrication, the mechanical, structural and tribological properties of two Molybdenum disulphide (MoS2) based coatings are examined and evaluated. Among the two coatings, one coating is doped with Ti (Ti-MoS2) and the other is a combination of metal, lubricant and oxide (Sb2O3/Au - MoS2). These coatings are known to provide low friction in vacuum environments. The goal of this work was to evaluate friction and wear performance of MoS2 doped coatings in unidirectional and reciprocating sliding contact under different environmental conditions. Sliding contact results showed friction and wear dependence on temperature and humidity. The formation and removal of transfer films and the recrystallization and reorientation of basal layers on the steel counterface was observed as the mechanism for low friction. Structural analysis revealed a relationship between the microstructural properties and tribological performance. It was also observed that the addition of dopants (Ti, Au, Sb 2O3) improved the mechanical properties as compared to pure MoS2 coatings. Further, the rolling contact performance of the coatings was measured on a five ball on rod tribometer and a Thrust bearing tribometer under vacuum and air environments. The rolling contact experiments indicated that life of the rolling components depend on the amount of material present between the contacts. Fluid film lubrication with thin film coatings investigates the possibilities to improve the performance and durability of tribological components when oils and thin films are synergistically coupled. In this work, the ability of a Diamond Like Carbon coating to increase the durability of contacting surfaces under boundary lubrication were studied. The performance of highly hydrogenated Diamond Like Carbon (DLC) was evaluated in a mixed sliding and rolling contact. Experimental results show significant improvement in fatigue life of steel specimens after coating with a highly hydrogenated Diamond Like Carbon coating. The improved fatigue life is attributed to the coating microstructure and the mechanical properties.

Study on Thermochromic VO2 Films Grown on ZnO-Coated Glass Substrates for “Smart Windows”

NASA Astrophysics Data System (ADS)

Kato, Kazuhiro; Song, Pung Keun; Odaka, Hidehumi; Shigesato, Yuzo

2003-10-01

Vanadium dioxide (VO2) is one of the most attractive thermochromic materials, which show large changes in optical and electrical properties at the transition temperature (Tt) close to the atmospheric temperature (approximately 340 K). We already reported for VO2 deposition by rf magnetron sputtering using V2O3 or V2O5 targets that VO2 films thicker than 400 nm showed high thermochromic performance, whereas the VO2 films thinner than 200 nm did not show such performance because of their poor crystallinity and off-stoichiometry. In this study, very thin thermochromic VO2 films with thicknesses of about 50 nm were successfully deposited using highly < 001>-preferred oriented ZnO polycrystalline films as a buffer layer between the VO2 film and glass substrate (VO2/ZnO/glass) because of the heteroepitaxial growth of VO2 polycrystalline films. W-doped VO2 films were also deposited on the ZnO-coated glass substrates (ZnO/glass) by cosputtering. It was confirmed that W doping for thin VO2 films deposited on the ZnO/glass can decrease Tt systematically. Such very thin VO2 films should have high potential for application in “smart windows”.

Highly stable precursor solution containing ZnO nanoparticles for the preparation of ZnO thin film transistors.

PubMed

Huang, Heh-Chang; Hsieh, Tsung-Eong

2010-07-23

ZnO particles with an average size of about 5 nm were prepared via a sol-gel chemical route and the silane coupling agent, (3-glycidyloxypropyl)-trimethoxysilane (GPTS), was adopted to enhance the dispersion of the ZnO nanoparticles in ethyl glycol (EG) solution. A ZnO surface potential as high as 66 mV was observed and a sedimentation test showed that the ZnO precursor solution remains transparent for six months of storage, elucidating the success of surface modification on ZnO nanoparticles. The ZnO thin films were then prepared by spin coating the precursor solution on a Si wafer and annealing treatments at temperatures up to 500 degrees C were performed for subsequent preparation of ZnO thin film transistors (TFTs). Microstructure characterization revealed that the coalescence of ZnO nanoparticles occurs at temperatures as low as 200 degrees C to result in a highly uniform, nearly pore-free layer. However, annealing at higher temperatures was required to remove organic residues in the ZnO layer for satisfactory device performance. The 500 degrees C-annealed ZnO TFT sample exhibited the best electrical properties with on/off ratio = 10(5), threshold voltage = 17.1 V and mobility (micro) = 0.104 cm(2) V(-1) s(-1).

Resistive switching: An investigation of the bipolar–unipolar transition in Co-doped ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Santos, Daniel A.A., E-mail: danielandrade.ufs@gmail.com; Department of Physics, University at Buffalo, The State University of New York, Buffalo, NY 14260; Zeng, Hao

2015-06-15

Highlights: • A purely bipolar behavior on a Co-doped ZnO thin film has been demonstrated. • We have shown what can happen if a unipolar test is performed in a purely bipolar device. • An explanation for how a sample can show a purely bipolar switching behavior was suggested. • An important open issue about resistive switching effect was put in debate. - Abstract: In order to investigate the resistive switching effect we built devices in a planar structure in which two Al contacts were deposited on the top of the film and separated by a small gap using amore » shadow mask. Therefore, two samples of 10% Co-doped ZnO thin films were sputtered on glass substrate. High resolution X-ray diffraction (HRXRD) revealed a highly c-axis oriented crystalline structure, without secondary phase. The high resolution scanning electron microscopy (HRSEM) showed a flat surface with good coverage and thickness about 300 nm. A Keithley 2425 semiconductor characterization system was used to perform the resistive switching tests in the bipolar and unipolar modes. Considering only the effect of compliance current (CC), the devices showed a purely bipolar behavior since an increase in CC did not induce a transition to unipolar behavior.« less

Switch contact device for interrupting high current, high voltage, AC and DC circuits

DOEpatents

Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

2005-01-04

A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

Refractive index and temperature-sensing characteristics of a cladding-etched thin core fiber interferometer

NASA Astrophysics Data System (ADS)

Wang, Weiying; Dong, Xinran; Chu, Dongkai; Hu, Youwang; Sun, Xiaoyan; Duan, Ji-An

2018-05-01

A high refractive index (RI) sensor based on an in-line Mach-Zehnder mode interferometer (MZI) is proposed. The sensor was realized by splicing a 2-cm length of cladding-etched thin core fiber (TCF) between two single mode fibers (SMFs). The TCF-structured MZI exhibited good fringe visibility as high as 15 dB in air and the high RI sensitivity attained a value of 1143.89 nm/RIU at a RI of 1.447. The experimental data revealed that the MZI has high RI sensitivity after HF etching realizing 2599.66 nm/RIU. Studies were performed on the temperature characteristics of the device. It is anticipated that this high RI sensor will be deployed in new and diverse applications in the chemical and biological fields.

Detection of Matrix Elements and Trace Impurities in Cu(In, Ga)Se2 Photovoltaic Absorbers Using Surface Analytical Techniques.

PubMed

Kim, Min Jung; Lee, Jihye; Kim, Seon Hee; Kim, Haidong; Lee, Kang-Bong; Lee, Yeonhee

2015-10-01

Chalcopyrite Cu(In, Ga)Se2 (CIGS) thin films are well known as the next-generation solar cell materials notable for their high absorption coefficient for solar radiation, suitable band gap, and ability for deposition on flexible substrate materials, allowing the production of highly flexible and lightweight solar panels. To improve solar cell performances, a quantitative and depth-resolved elemental analysis of photovoltaic thin films is much needed. In this study, Cu(In, Ga)Se2 thin films were prepared on molybdenum back contacts deposited on soda-lime glass substrates via three-stage evaporation. Surface analyses via AES and SIMS were used to characterize the CIGS thin films and compare their depth profiles. We determined the average concentration of the matrix elements, Cu, In, Ga, and Se, using ICP-AES, XRF, and EPMA. We also obtained depth profiling results using TOF-SIMS, magnetic sector SIMS and AES, and APT, a sub-nanometer resolution characterization technique that enables three-dimensional elemental mapping. The SIMS technique, with its high detection limit and ability to obtain the profiles of elements in parallel, is a powerful tool for monitoring trace elements in CIGS thin films. To identify impurities in a CIGS layer, the distribution of trace elements was also observed according to depth by SIMS and APT.

The determination and quantification of photosynthetic pigments by reverse phase high-performance liquid chromatography, thin-layer chromatography, and spectrophotometry.

PubMed

Pocock, Tessa; Król, Marianna; Huner, Norman P A

2004-01-01

Chorophylls and carotenoids are functionally important pigment molecules in photosynthetic organisms. Methods for the determination of chlorophylls a and b, beta-carotene, neoxanthin, and the pigments that are involved in photoprotective cycles such as the xanthophylls are discussed. These cycles involve the reversible de-epoxidation of violaxanthin into antheraxanthin and zeaxanthin, as well as the reversible de-epoxidation of lutein-5,6-epoxide into lutein. This chapter describes pigment extraction procedures from higher plants and green algae. Methods for the determination and quantification using high-performance liquid chromatograpy (HPLC) are described as well as methods for the separation and purification of pigments for use as standards using thin-layer chromatography (TLC). In addition, several spectrophotometric methods for the quantification of chlorophylls a and b are described.

High performance thin layer chromatography fingerprint analysis of guava (Psidium guajava) leaves

NASA Astrophysics Data System (ADS)

Astuti, M.; Darusman, L. K.; Rafi, M.

2017-05-01

High-performance thin layer chromatography (HPTLC) fingerprint analysis is commonly used for quality control of medicinal plants in term of identification and authentication. In this study, we have been developed HPTLC fingerprint analysis for identification of guava (Psidium guajava) leaves raw material. A mixture of chloroform, acetone, and formic acid in the ratio 10:2:1 was used as the optimum mobile phase in HPTLC silica plate and with 13 bands were detected. As reference marker we chose gallic acid (Rf = 0.21) and catechin (Rf = 0.11). The two compound were detected as pale black bands at 366 nm after derivatization with sulfuric acid 10% v/v (in methanol) reagent. Validation of the method was met within validation criteria, so the developed method could be used for quality control of guava leaves.

Organic-Inorganic Hybrid Ruddlesden-Popper Perovskites: An Emerging Paradigm for High-Performance Light-Emitting Diodes.

PubMed

Liu, Xiao-Ke; Gao, Feng

2018-05-03

Recently, lead halide perovskite materials have attracted extensive interest, in particular, in the research field of solar cells. These materials are fascinating "soft" materials with semiconducting properties comparable to the best inorganic semiconductors like silicon and gallium arsenide. As one of the most promising perovskite family members, organic-inorganic hybrid Ruddlesden-Popper perovskites (HRPPs) offer rich chemical and structural flexibility for exploring excellent properties for optoelectronic devices, such as solar cells and light-emitting diodes (LEDs). In this Perspective, we present an overview of HRPPs on their structural characteristics, synthesis of pure HRPP compounds and thin films, control of their preferential orientations, and investigations of heterogeneous HRPP thin films. Based on these recent advances, future directions and prospects have been proposed. HRPPs are promising to open up a new paradigm for high-performance LEDs.

Combining surface enhanced Raman scattering (SERS) and high-performance thin-layer chromatography (HPTLC)

NASA Astrophysics Data System (ADS)

Koglin, E.

A new method for preparing SERS active surfaces using silver colloidal spheres deposited on HPTLC plates, used for thin-layer chromatography, is discussed in detail. The sensitivity of these activated HPTLC plates is so high that in-situ vibrational investigations of chromatogram spots are possible at the nanogram level. The HPTLC/SERS spectra of purine, benzoic acid and 1-nitro-pyrene adsorbed on silver colloidal activated silica gel plates are measured in the nanogram region. In addition we also report in this paper on the results of a feasibility study performed to evaluate the analytical potential of micro-Raman spectroscopy (triple monochromator, multichannel detection system) in SERS/HPTLC spot characterization. It permits the acquisition of Raman spectra from HPTLC spots down to 1 μm in size or other forms of microsamples approaching the picogram level in mass.

ZnO/p-GaN heterostructure for solar cells and the effect of ZnGa2O4 interlayer on their performance.

PubMed

Nam, Seung Yong; Choi, Yong Seok; Lee, Ju Ho; Park, Seong Ju; Lee, Jeong Yong; Lee, Dong Seon

2013-01-01

We report the usage of ZnO material as an alternative for n-GaN for realizing III-nitride based solar cell. The fabricated solar cell shows large turn-on voltage of around 8 volts and a rapid decrease of photocurrent at low bias voltage under darkness and 1-sun illumination conditions, respectively. This phenomenon can be attributed to the formation of high-resistive ultra-thin layers at the ZnO/ p-GaN junction interface during high temperature deposition. Transmission electron microscopy (TEM) studies carried out on the grown samples reveals that the ultra-thin layer consists of ZnGa2O4. It is found that the presence of insulating ZnGa2O4 film is detrimental in the performance of proposed heterostructure for solar cells.

Optimization of material/device parameters of CdTe photovoltaic for solar cells applications

NASA Astrophysics Data System (ADS)

Wijewarnasuriya, Priyalal S.

2016-05-01

Cadmium telluride (CdTe) has been recognized as a promising photovoltaic material for thin-film solar cell applications due to its near optimum bandgap of ~1.5 eV and high absorption coefficient. The energy gap is near optimum for a single-junction solar cell. The high absorption coefficient allows films as thin as 2.5 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 20% have been produced with poly-CdTe materials. This paper examines n/p heterostructure device architecture. The performance limitations related to doping concentrations, minority carrier lifetimes, absorber layer thickness, and surface recombination velocities at the back and front interfaces is assessed. Ultimately, the paper explores device architectures of poly- CdTe and crystalline CdTe to achieve performance comparable to gallium arsenide (GaAs).

High-energy asymmetric supercapacitors based on free-standing hierarchical Co-Mo-S nanosheets with enhanced cycling stability.

PubMed

Balamurugan, Jayaraman; Li, Chao; Peera, Shaik Gouse; Kim, Nam Hoon; Lee, Joong Hee

2017-09-21

Layered transition metal sulfides (TMS) are emerging as advanced materials for energy storage and conversion applications. In this work, we report a facile and cost-effective anion exchange technique to fabricate a layered, multifaceted, free standing, ultra-thin ternary cobalt molybdenum sulfide nanosheet (Co-Mo-S NS) architecture grown on a 3D porous Ni foam substrate. The unique Co-Mo layered double hydroxides are first synthesized as precursors and consequently transformed into ultra-thin Co-Mo-S NS. When employed as an electrode for supercapacitors, the Co-Mo-S NS delivered an ultra-high specific capacitance of 2343 F g -1 at a current density of 1 mA cm -2 with tremendous rate capability and extraordinary cycling performance (96.6% capacitance retention after 20 000 cycles). Furthermore, assembled Co-Mo-S/nitrogen doped graphene nanosheets (NGNS) in an asymmetric supercapacitor (ASC) device delivered an excellent energy density of 89.6 Wh kg -1 , an amazing power density of 20.07 kW kg -1 , and superior cycling performance (86.8% capacitance retention after 50 000 cycles). Such exceptional electrochemical performance of Co-Mo-S NS is ascribed to the good electrical contact with the 3D Ni foam, ultra-high contact area with the electrolyte, and enhanced architectural softening during the charging/discharging process. It is expected that the fabricated, unique, ultra-thin Co-Mo-S NS have great potential for future energy storage devices.

Fabrication of interdigitated high-performance zinc oxide nanowire modified electrodes for glucose sensing.

PubMed

Haarindraprasad, R; Hashim, Uda; Gopinath, Subash C B; Perumal, Veeradasan; Liu, Wei-Wen; Balakrishnan, S R

2016-06-21

Diabetes is a metabolic disease with a prolonged elevated level of glucose in the blood leads to long-term complications and increases the chances for cardiovascular diseases. The present study describes the fabrication of a ZnO nanowire (NW)-modified interdigitated electrode (IDE) to monitor the level of blood glucose. A silver IDE was generated by wet etching-assisted conventional lithography, with a gap between adjacent electrodes of 98.80 μm. The ZnO-based thin films and NWs were amended by sol-gel and hydrothermal routes. High-quality crystalline and c-axis orientated ZnO thin films were observed by XRD analyses. The ZnO thin film was annealed for 1, 3 and 5 h, yielding a good-quality crystallite with sizes of 50, 100 and 110 nm, and the band gaps were measured as 3.26, 3.20 and 3.17 eV, respectively. Furthermore, a flower-modeled NW was obtained with the lowest diameter of 21 nm. Our designed ZnO NW-modified IDE was shown to have a detection limit as low as 0.03 mg/dL (correlation coefficient = 0.98952) of glucose with a low response time of 3 s, perform better than commercial glucose meter, suitable to instantly monitor the glucose level of diabetes patients. This study demonstrated the high performance of NW-mediated IDEs for glucose sensing as alternative to current glucose sensors. Copyright © 2016 Elsevier B.V. All rights reserved.

Layer-by-layer assembled polyaniline nanofiber/multiwall carbon nanotube thin film electrodes for high-power and high-energy storage applications.

PubMed

Hyder, Md Nasim; Lee, Seung Woo; Cebeci, Fevzi Ç; Schmidt, Daniel J; Shao-Horn, Yang; Hammond, Paula T

2011-11-22

Thin film electrodes of polyaniline (PANi) nanofibers and functionalized multiwall carbon nanotubes (MWNTs) are created by layer-by-layer (LbL) assembly for microbatteries or -electrochemical capacitors. Highly stable cationic PANi nanofibers, synthesized from the rapid aqueous phase polymerization of aniline, are assembled with carboxylic acid functionalized MWNT into LbL films. The pH-dependent surface charge of PANi nanofibers and MWNTs allows the system to behave like weak polyelectrolytes with controllable LbL film thickness and morphology by varying the number of bilayers. The LbL-PANi/MWNT films consist of a nanoscale interpenetrating network structure with well developed nanopores that yield excellent electrochemical performance for energy storage applications. These LbL-PANi/MWNT films in lithium cell can store high volumetric capacitance (~238 ± 32 F/cm(3)) and high volumetric capacity (~210 mAh/cm(3)). In addition, rate-dependent galvanostatic tests show LbL-PANi/MWNT films can deliver both high power and high energy density (~220 Wh/L(electrode) at ~100 kW/L(electrode)) and could be promising positive electrode materials for thin film microbatteries or electrochemical capacitors. © 2011 American Chemical Society

Efficient Defect Engineering for Solution Combustion Processed In-Zn-O thin films for high performance transistors

NASA Astrophysics Data System (ADS)

Liang, Xiaoci; Wang, Chengcai; Liang, Jun; Liu, Chuan; Pei, Yanli

2017-09-01

The oxygen related defects in the solution combustion-processed InZnO vitally affect the field-effect mobility and on-off characteristics in thin film transistors (TFTs). We use photoelectron spectroscopy to reveal that these defects can be well controlled by adjusting the atmosphere and flow rate during the combustion reaction, but are hardly affected by further post-annealing after the reaction. In device performance, the threshold voltage of the InZnO-TFTs was regulated in a wide range from 3.5 V to 11.0 V. To compromise the high field-effect mobility and good subthreshold properties, we fabricate the TFTs with double active layers of InZnO to achieve vertical gradience in defect distribution. The resulting TFT exhibits much higher field-effect mobility as 17.5 cm2 · V-1 · s-1, a low reversed sub-threshold slope as 0.35 V/decade, and a high on-off ratio as 107. The presented understandings and methods on defect engineering are efficient in improving the device performance of TFTs made from the combustion reaction process.

Ultrahigh broadband photoresponse of SnO2 nanoparticle thin film/SiO2/p-Si heterojunction.

PubMed

Ling, Cuicui; Guo, Tianchao; Lu, Wenbo; Xiong, Ya; Zhu, Lei; Xue, Qingzhong

2017-06-29

The SnO 2 /Si heterojunction possesses a large band offset and it is easy to control the transportation of carriers in the SnO 2 /Si heterojunction to realize high-response broadband detection. Therefore, we investigated the potential of the SnO 2 nanoparticle thin film/SiO 2 /p-Si heterojunction for photodetectors. It is demonstrated that this heterojunction shows a stable, repeatable and broadband photoresponse from 365 nm to 980 nm. Meanwhile, the responsivity of the device approaches a high value in the range of 0.285-0.355 A W -1 with the outstanding detectivity of ∼2.66 × 10 12 cm H 1/2 W -1 and excellent sensitivity of ∼1.8 × 10 6 cm 2 W -1 , and its response and recovery times are extremely short (<0.1 s). This performance makes the device stand out among previously reported oxide or oxide/Si based photodetectors. In fact, the photosensitivity and detectivity of this heterojunction are an order of magnitude higher than that of 2D material based heterojunctions such as (Bi 2 Te 3 )/Si and MoS 2 /graphene (photosensitivity of 7.5 × 10 5 cm 2 W -1 and detectivity of ∼2.5 × 10 11 cm H 1/2 W -1 ). The excellent device performance is attributed to the large Fermi energy difference between the SnO 2 nanoparticle thin film and Si, SnO 2 nanostructure, oxygen vacancy defects and thin SiO 2 layer. Consequently, practical highly-responsive broadband PDs may be actualized in the future.

Photo-Patterned Ion Gel Electrolyte-Gated Thin Film Transistors

NASA Astrophysics Data System (ADS)

Choi, Jae-Hong; Gu, Yuanyan; Hong, Kihyun; Frisbie, C. Daniel; Lodge, Timothy P.

2014-03-01

We have developed a novel fabrication route to pattern electrolyte thin films in electrolyte-gated transistors (EGTs) using a chemically crosslinkable ABA-triblock copolymer ion gel. In the self-assembly of poly[(styrene-r-vinylbenzylazide)-b-ethylene oxide-b-(styrene-r-vinylbenzylazide)] (SOS-N3) triblock copolymer and the ionic liquid, 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMI][TFSI]), the azide groups of poly(styrene-r-vinylbenzylazide) (PS-N3) end-blocks in the cores can be chemically cross-linked via UV irradiation (λ = 254 nm). Impedance spectroscopy and small-angle X-ray scattering confirmed that ion transport and microstructure of the ion gel are not affected by UV cross-linking. Using this chemical cross-linking strategy, we demonstrate a photo-patterning of ion gels through a patterned mask and the fabricated electrolyte-gated thin film transistors with photo-patterned ion gels as high-capacitance gate insulators exhibited high device performance (low operation voltages and high on/off current ratios).

Characterization of the thin-film NbN superconductor for single-photon detection by transport measurements

NASA Astrophysics Data System (ADS)

Lin, Shi-Zeng; Ayala-Valenzuela, Oscar; McDonald, Ross D.; Bulaevskii, Lev N.; Holesinger, Terry G.; Ronning, Filip; Weisse-Bernstein, Nina R.; Williamson, Todd L.; Mueller, Alexander H.; Hoffbauer, Mark A.; Rabin, Michael W.; Graf, Matthias J.

2013-05-01

The fabrication of high-quality thin superconducting films is essential for single-photon detectors. Their device performance is crucially affected by their material parameters, thus requiring reliable and nondestructive characterization methods after the fabrication and patterning processes. Important material parameters to know are the resistivity, superconducting transition temperature, relaxation time of quasiparticles, and uniformity of patterned wires. In this work, we characterize micropatterned thin NbN films by using transport measurements in magnetic fields. We show that from the instability of vortex motion at high currents in the flux-flow state of the IV characteristic, the inelastic lifetime of quasiparticles can be determined to be about 2 ns. Additionally, from the depinning transition of vortices at low currents, as a function of magnetic field, the size distribution of grains can be extracted. This size distribution is found to be in agreement with the film morphology obtained from scanning electron microscopy and high-resolution transmission electron microscopy images.

Separated carbon nanotube macroelectronics for active matrix organic light-emitting diode displays.

PubMed

Zhang, Jialu; Fu, Yue; Wang, Chuan; Chen, Po-Chiang; Liu, Zhiwei; Wei, Wei; Wu, Chao; Thompson, Mark E; Zhou, Chongwu

2011-11-09

Active matrix organic light-emitting diode (AMOLED) display holds great potential for the next generation visual technologies due to its high light efficiency, flexibility, lightweight, and low-temperature processing. However, suitable thin-film transistors (TFTs) are required to realize the advantages of AMOLED. Preseparated, semiconducting enriched carbon nanotubes are excellent candidates for this purpose because of their excellent mobility, high percentage of semiconducting nanotubes, and room-temperature processing compatibility. Here we report, for the first time, the demonstration of AMOLED displays driven by separated nanotube thin-film transistors (SN-TFTs) including key technology components, such as large-scale high-yield fabrication of devices with superior performance, carbon nanotube film density optimization, bilayer gate dielectric for improved substrate adhesion to the deposited nanotube film, and the demonstration of monolithically integrated AMOLED display elements with 500 pixels driven by 1000 SN-TFTs. Our approach can serve as the critical foundation for future nanotube-based thin-film display electronics.

Separated Carbon Nanotube Macroelectronics for Active Matrix Organic Light-Emitting Diode Displays

NASA Astrophysics Data System (ADS)

Fu, Yue; Zhang, Jialu; Wang, Chuan; Chen, Pochiang; Zhou, Chongwu

2012-02-01

Active matrix organic light-emitting diode (AMOLED) display holds great potential for the next generation visual technologies due to its high light efficiency, flexibility, lightweight, and low-temperature processing. However, suitable thin-film transistors (TFTs) are required to realize the advantages of AMOLED. Pre-separated, semiconducting enriched carbon nanotubes are excellent candidates for this purpose because of their excellent mobility, high percentage of semiconducting nanotubes, and room-temperature processing compatibility. Here we report, for the first time, the demonstration of AMOLED displays driven by separated nanotube thin-film transistors (SN-TFTs) including key technology components such as large-scale high-yield fabrication of devices with superior performance, carbon nanotube film density optimization, bilayer gate dielectric for improved substrate adhesion to the deposited nanotube film, and the demonstration of monolithically integrated AMOLED display elements with 500 pixels driven by 1000 SN-TFTs. Our approach can serve as the critical foundation for future nanotube-based thin-film display electronics.

High-performance low-cost back-channel-etch amorphous gallium-indium-zinc oxide thin-film transistors by curing and passivation of the damaged back channel.

PubMed

Park, Jae Chul; Ahn, Seung-Eon; Lee, Ho-Nyeon

2013-12-11

High-performance, low-cost amorphous gallium-indium-zinc oxide (a-GIZO) thin-film-transistor (TFT) technology is required for the next generation of active-matrix organic light-emitting diodes. A back-channel-etch structure is the most appropriate device structure for high-performance, low-cost a-GIZO TFT technology. However, channel damage due to source/drain etching and passivation-layer deposition has been a critical issue. To solve this problem, the present work focuses on overall back-channel processes, such as back-channel N2O plasma treatment, SiOx passivation deposition, and final thermal annealing. This work has revealed the dependence of a-GIZO TFT characteristics on the N2O plasma radio-frequency (RF) power and frequency, the SiH4 flow rate in the SiOx deposition process, and the final annealing temperature. On the basis of these results, a high-performance a-GIZO TFT with a field-effect mobility of 35.7 cm(2) V(-1) s(-1), a subthreshold swing of 185 mV dec(-1), a switching ratio exceeding 10(7), and a satisfactory reliability was successfully fabricated. The technology developed in this work can be realized using the existing facilities of active-matrix liquid-crystal display industries.

Tritium autoradiography with thinned and back-side illuminated monolithic active pixel sensor device

NASA Astrophysics Data System (ADS)

Deptuch, G.

2005-05-01

The first autoradiographic results of the tritium ( 3H) marked source obtained with monolithic active pixel sensors are presented. The detector is a high-resolution, back-side illuminated imager, developed within the SUCIMA collaboration for low-energy (<30 keV) electrons detection. The sensitivity to these energies is obtained by thinning the detector, originally fabricated in the form of a standard VLSI chip, down to the thickness of the epitaxial layer. The detector used is the 1×10 6 pixel, thinned MIMOSA V chip. The low noise performance and thin (˜160 nm) entrance window provide the sensitivity of the device to energies as low as ˜4 keV. A polymer tritium source was parked directly atop the detector in open-air conditions. A real-time image of the source was obtained.

Frontally eluted components procedure with thin layer chromatography as a mode of sample preparation for high performance liquid chromatography quantitation of acetaminophen in biological matrix.

PubMed

Klimek-Turek, A; Sikora, M; Rybicki, M; Dzido, T H

2016-03-04

A new concept of using thin-layer chromatography to sample preparation for the quantitative determination of solute/s followed by instrumental techniques is presented Thin-layer chromatography (TLC) is used to completely separate acetaminophen and its internal standard from other components (matrix) and to form a single spot/zone containing them at the solvent front position (after the final stage of the thin-layer chromatogram development). The location of the analytes and internal standard in the solvent front zone allows their easy extraction followed by quantitation by HPLC. The exctraction procedure of the solute/s and internal standard can proceed from whole solute frontal zone or its part without lowering in accuracy of quantitative analysis. Copyright © 2016 Elsevier B.V. All rights reserved.

Solar collector

DOEpatents

Wilhelm, W.G.

The invention pertains to a flat plate collector that employs high performance thin films. The solar collector of this invention overcomes several problems in this field, such as excessive hardware, cost and reliability, and other prior art drawbacks outlined in the specification. In the preferred form, the apparatus features a substantially rigid planar frame. A thin film window is bonded to one planar side of the frame. An absorber of laminate construction is comprised of two thin film layers that are sealed perimetrically. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. Absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Sinusoidal nanotextures for light management in silicon thin-film solar cells.

PubMed

Köppel, G; Rech, B; Becker, C

2016-04-28

Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping structures is still a critical issue. Here, we implement hexagonal 750 nm pitched sinusoidal and pillar shaped nanostructures at the sun-facing glass-silicon interface into 10 μm thin liquid phase crystallized silicon thin-film solar cell devices on glass. Both structures are experimentally studied regarding their optical and optoelectronic properties. Reflection losses are reduced over the entire wavelength range outperforming state of the art anti-reflective planar layer systems. In case of the smooth sinusoidal nanostructures these optical achievements are accompanied by an excellent electronic material quality of the silicon absorber layer enabling open circuit voltages above 600 mV and solar cell device performances comparable to the planar reference device. For wavelengths smaller than 400 nm and higher than 700 nm optical achievements are translated into an enhanced quantum efficiency of the solar cell devices. Therefore, sinusoidal nanotextures are a well-balanced compromise between optical enhancement and maintained high electronic silicon material quality which opens a promising route for future optimizations in solar cell designs for silicon thin-film solar cells on glass.

Tunable thin-film optical filters for hyperspectral microscopy

NASA Astrophysics Data System (ADS)

Favreau, Peter F.; Rich, Thomas C.; Prabhat, Prashant; Leavesley, Silas J.

2013-02-01

Hyperspectral imaging was originally developed for use in remote sensing applications. More recently, it has been applied to biological imaging systems, such as fluorescence microscopes. The ability to distinguish molecules based on spectral differences has been especially advantageous for identifying fluorophores in highly autofluorescent tissues. A key component of hyperspectral imaging systems is wavelength filtering. Each filtering technology used for hyperspectral imaging has corresponding advantages and disadvantages. Recently, a new optical filtering technology has been developed that uses multi-layered thin-film optical filters that can be rotated, with respect to incident light, to control the center wavelength of the pass-band. Compared to the majority of tunable filter technologies, these filters have superior optical performance including greater than 90% transmission, steep spectral edges and high out-of-band blocking. Hence, tunable thin-film optical filters present optical characteristics that may make them well-suited for many biological spectral imaging applications. An array of tunable thin-film filters was implemented on an inverted fluorescence microscope (TE 2000, Nikon Instruments) to cover the full visible wavelength range. Images of a previously published model, GFP-expressing endothelial cells in the lung, were acquired using a charge-coupled device camera (Rolera EM-C2, Q-Imaging). This model sample presents fluorescently-labeled cells in a highly autofluorescent environment. Linear unmixing of hyperspectral images indicates that thin-film tunable filters provide equivalent spectral discrimination to our previous acousto-optic tunable filter-based approach, with increased signal-to-noise characteristics. Hence, tunable multi-layered thin film optical filters may provide greatly improved spectral filtering characteristics and therefore enable wider acceptance of hyperspectral widefield microscopy.

Mode-locked thin-disk lasers and their potential application for high-power terahertz generation

NASA Astrophysics Data System (ADS)

Saraceno, Clara J.

2018-04-01

The progress achieved in the last few decades in the performance of ultrafast laser systems with high average power has been tremendous, and continues to provide momentum to new exciting applications, both in scientific research and technology. Among the various technological advances that have shaped this progress, mode-locked thin-disk oscillators have attracted significant attention as a unique technology capable of providing ultrashort pulses with high energy (tens to hundreds of microjoules) and at very high repetition rates (in the megahertz regime) from a single table-top oscillator. This technology opens the door to compact high repetition rate ultrafast sources spanning the entire electromagnetic spectrum from the XUV to the terahertz regime, opening various new application fields. In this article, we focus on their unexplored potential as compact driving sources for high average power terahertz generation.

Solution-processable alumina: PVP nanocomposite dielectric layer for high-performance organic thin-film transistors

NASA Astrophysics Data System (ADS)

Lin, Hui; Kong, Xiao; Li, Yiran; Kuang, Peng; Tao, Silu

2018-03-01

In this article, we have investigated the effect of nanocomposite gate dielectric layer built by alumina (Al2O3) and poly(4-vinyphenol) (PVP) with solution method which could enhance the dielectric capability and decrease the surface polarity. Then, we used modify layer to optimize the surface morphology of dielectric layer to further improve the insulation capability, and finally we fabricated the high-performance and low-voltage organic thin-film transistors by using this nanocomposite dielectric layer. The result shows that the devices with Al2O3:10%PVP dielectric layer with a modified layer exhibited a mobility of 0.49 cm2/Vs, I on/Ioff ratio of 7.8 × 104, threshold voltage of - 1.2 V, sub-threshold swing of 0.3 V/dec, and operating voltage as low as - 4 V. The improvement of devices performance was owing to the good insulation capability, appropriate capacitance of dielectric layer, and preferable interface contact, smaller crystalline size of active layer.

Room-Temperature Fabrication of High-Performance Amorphous In-Ga-Zn-O/Al2O3 Thin-Film Transistors on Ultrasmooth and Clear Nanopaper.

PubMed

Ning, Honglong; Zeng, Yong; Kuang, Yudi; Zheng, Zeke; Zhou, Panpan; Yao, Rihui; Zhang, Hongke; Bao, Wenzhong; Chen, Gang; Fang, Zhiqiang; Peng, Junbiao

2017-08-23

Integrating biodegradable cellulose nanopaper into oxide thin-film transistors (TFTs) for next generation flexible and green flat panel displays has attracted great interest because it offers a viable solution to address the rapid increase of electronic waste that poses a growing ecological problem. However, a compromise between device performance and thermal annealing remains an obstacle for achieving high-performance nanopaper TFTs. In this study, a high-performance bottom-gate IGZO/Al 2 O 3 TFT with a dual-layer channel structure was initially fabricated on a highly transparent, clear, and ultrasmooth nanopaper substrate via conventional physical vapor deposition approaches, without further thermal annealing processing. Purified nanofibrillated cellulose with a width of approximately 3.7 nm was used to prepare nanopaper with excellent optical properties (92% transparency, 0.85% transmission haze) and superior surface roughness (Rq is 1.8 nm over a 5 × 5 μm 2 scanning area). More significantly, a bilayer channel structure (IGZO/Al 2 O 3 ) was adopted to fabricate high performance TFT on this nanopaper substrate without thermal annealing and the device exhibits a saturation mobility of 15.8 cm 2 /(Vs), an I on /I off ratio of 4.4 × 10 5 , a threshold voltage (V th ) of -0.42 V, and a subthreshold swing (SS) of 0.66 V/dec. The room-temperature fabrication of high-performance IGZO/Al 2 O 3 TFTs on such nanopaper substrate without thermal annealing treatment brings industry a step closer to realizing inexpensive, flexible, lightweight, and green paper displays.

Thin chitosan films containing super-paramagnetic nanoparticles with contrasting capability in magnetic resonance imaging.

PubMed

Farjadian, Fatemeh; Moradi, Sahar; Hosseini, Majid

2017-03-01

Magnetic nanoparticles have found application as MRI contrasting agents. Herein, chitosan thin films containing super-paramagnetic iron oxide nanoparticles (SPIONs) are evaluated in magnetic resonance imaging (MRI). To determine their contrasting capability, super-paramagnetic nanoparticles coated with citrate (SPIONs-cit) were synthesized. Then, chitosan thin films with different concentrations of SPIONs-cit were prepared and their MRI data (i.e., r 2 and r 2 *) was evaluated in an aqueous medium. The synthesized SPIONs-cit and chitosan/SPIONs-cit films were characterized by FTIR, EDX, XRD as well as VSM with the morphology evaluated by SEM and AFM. The nanoparticle sizes and distribution confirmed well-defined nanoparticles and thin films formation along with high contrasting capability in MRI. Images revealed well-dispersed uniform nanoparticles, averaging 10 nm in size. SPIONs-cit's hydrodynamic size averaged 23 nm in diameter. The crystallinity obeyed a chitosan and SPIONs pattern. The in vitro cellular assay of thin films with a novel route was performed within Hek293 cell lines showing that thin films can be biocompatible.

INTACS before or after laser in situ keratomileusis: correction of thin corneas with moderately high myopia.

PubMed

Ito, Mitsutoshi; Arai, Hiroyuki; Fukumoto, Teruki; Toda, Ikuko; Tsubota, Kazuo

2004-01-01

Intrastromal corneal ring segments (INTACS Micro-Thin Prescription Inserts by Addition Technologies, Fremont, Calif) were inserted as a combined surgery with laser in situ keratomileusis (LASIK) in six eyes with thin corneas to correct moderately high myopia. INTACS were implanted before LASIK (INTACS-LASIK) in three eyes and after LASIK (LASIK-INTACS) in three eyes. Mean preoperative manifest spherical equivalent refraction was -7.88 diopters. Mean follow-up was 306 days. No intraoperative complications occurred. The LASIK-INTACS eyes were slightly more overcorrected than the INTACS-LASIK eyes because of the enhanced performance of INTACS in the thinned corneal tissue. Induced astigmatism by INTACS per se was less in the LASIK-INTACS eyes than in the INTACS-LASIK eyes. At last examination, uncorrected visual acuity was better than 20/25 in all eyes. Best spectacle-corrected visual acuity was within 1 line of the preoperative value in all eyes. Both methods resulted in significant improvement in visual acuity and refraction. Based on our limited experience, however, LASIK followed by INTACS is preferred for reasons of safety, convenience, and lower induced cylinder.

Focussed ion beam thin sample microanalysis using a field emission gun electron probe microanalyser

NASA Astrophysics Data System (ADS)

Kubo, Y.

2018-01-01

Field emission gun electron probe microanalysis (FEG-EPMA) in conjunction with wavelength-dispersive X-ray spectrometry using a low acceleration voltage (V acc) allows elemental analysis with sub-micrometre lateral spatial resolution (SR). However, this degree of SR does not necessarily meet the requirements associated with increasingly miniaturised devices. Another challenge related to performing FEG-EPMA with a low V acc is that the accuracy of quantitative analyses is adversely affected, primarily because low energy X-ray lines such as the L- and M-lines must be employed and due to the potential of line interference. One promising means of obtaining high SR with FEG-EPMA is to use thin samples together with high V acc values. This mini-review covers the basic principles of thin-sample FEG-EPMA and describes an application of this technique to the analysis of optical fibres. Outstanding issues related to this technique that must be addressed are also discussed, which include the potential for electron beam damage during analysis of insulating materials and the development of methods to use thin samples for quantitative analysis.

Thin-film decoupling capacitors for multi-chip modules

NASA Astrophysics Data System (ADS)

Dimos, D.; Lockwood, S. J.; Schwartz, R. W.; Rogers, M. S.

Thin-film decoupling capacitors based on ferroelectric lead lanthanum zirconate titanate (PLZT) films are being developed for use in advanced packages, such as multi-chip modules. These thin-film decoupling capacitors are intended to replace multi-layer ceramic capacitors for certain applications, since they can be more fully integrated into the packaging architecture. The increased integration that can be achieved should lead to decreased package volume and improved high-speed performance, due to a decrease in interconnect inductance. PLZT films are fabricated by spin coating using metal carboxylate/alkoxide solutions. These films exhibit very high dielectric constants ((var epsilon) greater than or equal to 900), low dielectric losses (tan(delta) = 0.01), excellent insulation resistances (rho greater than 10(exp 13) (Omega)-cm at 125 C), and good breakdown field strengths (E(sub B) = 900 kV/cm). For integrated circuit applications, the PLZT dielectric is less than 1 micron thick, which results in a large capacitance/area (8-9 nF/sq mm). The thin-film geometry and processing conditions also make these capacitors suitable for direct incorporation onto integrated circuits and for packages that require embedded components.

Nonlinear microwave response of an MgB2 thin film

NASA Astrophysics Data System (ADS)

Purnell, A. J.; Cohen, L. F.; Zhai, H. Y.; Christen, H. M.; Paranthaman, M. P.; Lowndes, D. H.; Hao, Ling; Gallop, J. C.

2004-04-01

MgB2 is a two-gap superconductor and as a result may manifest unusual physical properties. The performance of MgB2 films at microwave frequencies has so far been rather poor compared to that of Nb alloys and this may result from intrinsic behaviour related to the double-gap structure or extrinsic properties due to non-optimized thin films. Here we give a detailed report on the microwave magnetic field dependent surface impedance of an MgB2 thin film, using a parallel plate resonator, as a function of temperature. We discuss whether the framework used to analyse nonlinear behaviour for other superconductors, both low and high Tc, but single-gap, has any validity for MgB2 and whether the films are limited by intrinsic or extrinsic behaviour. The key result is the observation of junction-type switching effects at high microwave power.

Production of thin targets by implantation for the measurement of the 16O + 16O elastic scattering below the Coulomb barrier

NASA Astrophysics Data System (ADS)

Silva, H.; Cruz, J.; Sánchez-Benítez, A. M.; Santos, C.; Luís, H.; Fonseca, M.; Jesus, A. P.

2017-09-01

In recent decades, the processes of fusion of 16O were studied both theoretically and experimentally. However, the theoretical calculations are unable to fit both elastic scattering cross sections and fusion S-factors. The use of 16O thin transmission targets is required to measure the elastic forward scattering 16O + 16O reaction. The areal density of the target must be high to maximize the reaction products yields, but not so high as to allow a correct calculation of the effective beam energy. Besides this, the target must withstand beam interactions without noticeable deterioration, and contaminants must be minimal. In this study, the production of thin targets is performed with an innovative technique. Beam characterization and preliminary spectrum for the elastic scattering are also presented, showing the suitability of these targets for the proposed reaction.

A Thin Film Flexible Supercapacitor Based on Oblique Angle Deposited Ni/NiO Nanowire Arrays.

PubMed

Ma, Jing; Liu, Wen; Zhang, Shuyuan; Ma, Zhe; Song, Peishuai; Yang, Fuhua; Wang, Xiaodong

2018-06-11

With high power density, fast charging-discharging speed, and a long cycling life, supercapacitors are a kind of highly developed novel energy-storage device that has shown a growing performance and various unconventional shapes such as flexible, linear-type, stretchable, self-healing, etc. Here, we proposed a rational design of thin film, flexible micro-supercapacitors with in-plane interdigital electrodes, where the electrodes were fabricated using the oblique angle deposition technique to grow oblique Ni/NiO nanowire arrays directly on polyimide film. The obtained electrodes have a high specific surface area and good adhesion to the substrate compared with other in-plane micro-supercapacitors. Meanwhile, the as-fabricated micro-supercapacitors have good flexibility and satisfactory energy-storage performance, exhibiting a high specific capacity of 37.1 F/cm³, a high energy density of 5.14 mWh/cm³, a power density of up to 0.5 W/cm³, and good stability during charge-discharge cycles and repeated bending-recovery cycles, respectively. Our micro-supercapacitors can be used as ingenious energy storage devices for future portable and wearable electronic applications.

Demonstrating the potential of yttrium-doped barium zirconate electrolyte for high-performance fuel cells.

PubMed

Bae, Kiho; Jang, Dong Young; Choi, Hyung Jong; Kim, Donghwan; Hong, Jongsup; Kim, Byung-Kook; Lee, Jong-Ho; Son, Ji-Won; Shim, Joon Hyung

2017-02-23

In reducing the high operating temperatures (≥800 °C) of solid-oxide fuel cells, use of protonic ceramics as an alternative electrolyte material is attractive due to their high conductivity and low activation energy in a low-temperature regime (≤600 °C). Among many protonic ceramics, yttrium-doped barium zirconate has attracted attention due to its excellent chemical stability, which is the main issue in protonic-ceramic fuel cells. However, poor sinterability of yttrium-doped barium zirconate discourages its fabrication as a thin-film electrolyte and integration on porous anode supports, both of which are essential to achieve high performance. Here we fabricate a protonic-ceramic fuel cell using a thin-film-deposited yttrium-doped barium zirconate electrolyte with no impeding grain boundaries owing to the columnar structure tightly integrated with nanogranular cathode and nanoporous anode supports, which to the best of our knowledge exhibits a record high-power output of up to an order of magnitude higher than those of other reported barium zirconate-based fuel cells.

Advancements in high-power high-brightness laser bars and single emitters for pumping and direct diode application

NASA Astrophysics Data System (ADS)

An, Haiyan; Jiang, Ching-Long J.; Xiong, Yihan; Zhang, Qiang; Inyang, Aloysius; Felder, Jason; Lewin, Alexander; Roff, Robert; Heinemann, Stefan; Schmidt, Berthold; Treusch, Georg

2015-03-01

We have continuously optimized high fill factor bar and packaging design to increase power and efficiency for thin disc laser system pump application. On the other hand, low fill factor bars packaged on the same direct copper bonded (DCB) cooling platform are used to build multi-kilowatt direct diode laser systems. We have also optimized the single emitter designs for fiber laser pump applications. In this paper, we will give an overview of our recent advances in high power high brightness laser bars and single emitters for pumping and direct diode application. We will present 300W bar development results for our next generation thin disk laser pump source. We will also show recent improvements on slow axis beam quality of low fill factor bar and its application on performance improvement of 4-5 kW TruDiode laser system with BPP of 30 mm*mrad from a 600 μm fiber. Performance and reliability results of single emitter for multiemitter fiber laser pump source will be presented as well.

Enhanced structural color generation in aluminum metamaterials coated with a thin polymer layer

DOE PAGES

Cheng, Fei; Yang, Xiaodong; Rosenmann, Daniel; ...

2015-09-18

A high-resolution and angle-insensitive structural color generation platform is demonstrated based on triple-layer aluminum-silica-aluminum metamaterials supporting surface plasmon resonances tunable across the entire visible spectrum. The color performances of the fabricated aluminum metamaterials can be strongly enhanced by coating a thin transparent polymer layer on top. The results show that the presence of the polymer layer induces a better impedance matching for the plasmonic resonances to the free space so that strong light absorption can be obtained, leading to the generation of pure colors in cyan, magenta, yellow and black (CMYK) with high color saturation.

High-performance carbon nanotube thin-film transistors on flexible paper substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Na; Yun, Ki Nam; Yu, Hyun-Yong

Single-walled carbon nanotubes (SWCNTs) are promising materials as active channels for flexible transistors owing to their excellent electrical and mechanical properties. However, flexible SWCNT transistors have never been realized on paper substrates, which are widely used, inexpensive, and recyclable. In this study, we fabricated SWCNT thin-film transistors on photo paper substrates. The devices exhibited a high on/off current ratio of more than 10{sup 6} and a field-effect mobility of approximately 3 cm{sup 2}/V·s. The proof-of-concept demonstration indicates that SWCNT transistors on flexible paper substrates could be applied as low-cost and recyclable flexible electronics.

Study of Impact Damage in PVA-ECC Beam under Low-Velocity Impact Loading Using Piezoceramic Transducers and PVDF Thin-Film Transducers.

PubMed

Qi, Baoxin; Kong, Qingzhao; Qian, Hui; Patil, Devendra; Lim, Ing; Li, Mo; Liu, Dong; Song, Gangbing

2018-02-24

Compared to conventional concrete, polyvinyl alcohol fiber reinforced engineering cementitious composite (PVA-ECC) offers high-strength, ductility, formability, and excellent fatigue resistance. However, impact-induced structural damage is a major concern and has not been previously characterized in PVA-ECC structures. We investigate the damage of PVA-ECC beams under low-velocity impact loading. A series of ball-drop impact tests were performed at different drop weights and heights to simulate various impact energies. The impact results of PVA-ECC beams were compared with mortar beams. A combination of polyvinylidene fluoride (PVDF) thin-film sensors and piezoceramic-based smart aggregate were used for impact monitoring, which included impact initiation and crack evolution. Short-time Fourier transform (STFT) of the signal received by PVDF thin-film sensors was performed to identify impact events, while active-sensing approach was utilized to detect impact-induced crack evolution by the attenuation of a propagated guided wave. Wavelet packet-based energy analysis was performed to quantify failure development under repeated impact tests.

Study of Impact Damage in PVA-ECC Beam under Low-Velocity Impact Loading Using Piezoceramic Transducers and PVDF Thin-Film Transducers

PubMed Central

Qian, Hui; Li, Mo; Liu, Dong; Song, Gangbing

2018-01-01

Compared to conventional concrete, polyvinyl alcohol fiber reinforced engineering cementitious composite (PVA-ECC) offers high-strength, ductility, formability, and excellent fatigue resistance. However, impact-induced structural damage is a major concern and has not been previously characterized in PVA-ECC structures. We investigate the damage of PVA-ECC beams under low-velocity impact loading. A series of ball-drop impact tests were performed at different drop weights and heights to simulate various impact energies. The impact results of PVA-ECC beams were compared with mortar beams. A combination of polyvinylidene fluoride (PVDF) thin-film sensors and piezoceramic-based smart aggregate were used for impact monitoring, which included impact initiation and crack evolution. Short-time Fourier transform (STFT) of the signal received by PVDF thin-film sensors was performed to identify impact events, while active-sensing approach was utilized to detect impact-induced crack evolution by the attenuation of a propagated guided wave. Wavelet packet-based energy analysis was performed to quantify failure development under repeated impact tests. PMID:29495277

Thin Thermal-Insulation Blankets for Very High Temperatures

NASA Technical Reports Server (NTRS)

Choi, Michael K.

2003-01-01

Thermal-insulation blankets of a proposed type would be exceptionally thin and would endure temperatures up to 2,100 C. These blankets were originally intended to protect components of the NASA Solar Probe spacecraft against radiant heating at its planned closest approach to the Sun (a distance of 4 solar radii). These blankets could also be used on Earth to provide thermal protection in special applications (especially in vacuum chambers) for which conventional thermal-insulation blankets would be too thick or would not perform adequately.

Experimental approaches to well controlled studies of thin-film nucleation and growth.

NASA Technical Reports Server (NTRS)

Poppa, H.; Moorhead, R. D.; Heinemann, K.

1972-01-01

Particular features and the performance of two experimental systems are described for quantitative studies of thin-film nucleation and growth processes including epitaxial depositions. System I consists of a modified LEED-Auger instrument combined with high-resolution electron microscopy. System II is a UHV electron microscope adapted for in-situ deposition studies. The two systems complement each other ideally, and the combined use of both can result in a comprehensive investigation of vapor deposition processes not obtainable with any other known method.

Deposition of Polymer Thin Films on ZnO Nanoparticles by a Plasma Treatment

DTIC Science & Technology

2001-11-01

exchange for removing metal ions frori water. If on the surface of these nanoparticles, an extremely thin layer of polyacrylic filr can be coated by a...plasma treatment. The polyacrylic film will react with metallic ions in water. As a result of the high surface-to-volume ratio of these narioparticles, the...experiments performed on a JEM 2010F. In FFIR experiment, potassium bromide(KBr) of 99%+ purity was obtained from Aldrich Chemical Company Inc

High Performance Piezoelectric Actuators and Wings for Nano Air Vehicles

DTIC Science & Technology

2012-08-26

we designed and fabricated the LionFly, a flapping wing prototype actuated by a PZT -5H bimorph actuator. Several LionFly prototypes were fabricated...in the literature, using PZT thin film actuators directly coupled to a 2.5 mm SiO2/Si3N4/T i-Au wing that produces large flapping angle at resonance...for larger scale mechanisms [17, 9]. For PAVs, linear electromagnetic ac- tuation [21] and bulk PZT bimorph actuators [8], and thin film PZT unimorph

Predictive Model for the Meniscus-Guided Coating of High-Quality Organic Single-Crystalline Thin Films.

PubMed

Janneck, Robby; Vercesi, Federico; Heremans, Paul; Genoe, Jan; Rolin, Cedric

2016-09-01

A model that describes solvent evaporation dynamics in meniscus-guided coating techniques is developed. In combination with a single fitting parameter, it is shown that this formula can accurately predict a processing window for various coating conditions. Organic thin-film transistors (OTFTs), fabricated by a zone-casting setup, indeed show the best performance at the predicted coating speeds with mobilities reaching 7 cm 2 V -1 s -1 . © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Interleukin-7 Plasma Levels in Human Differentiate Anorexia Nervosa, Constitutional Thinness and Healthy Obesity.

PubMed

Germain, Natacha; Viltart, Odile; Loyens, Anne; Bruchet, Céline; Nadin, Katia; Wolowczuk, Isabelle; Estour, Bruno; Galusca, Bogdan

2016-01-01

Interleukin-7 (IL-7) is a cytokine involved in energy homeostasis as demonstrated in rodents. Anorexia nervosa is characterized by restrained eating behavior despite adaptive orexigenic regulation profile including high ghrelin plasma levels. Constitutional thinness is a physiological condition of resistance to weight gain with physiological anorexigenic profile including high Peptide YY plasma level. Healthy obesity can be considered as a physiological state of resistance to weight loss with opposite appetite regulating profile to constitutional thinness including low Peptide YY plasma level. No studies in IL-7 are yet available in those populations. Therefore we evaluated circadian plasma levels of IL-7 in anorexia nervosa compared to constitutional thinness, healthy obese and control females. 10 restrictive-type anorexia nervosa women, 5 bingeing/purging anorexia nervosa woman, 5 recovered restrictive anorexia nervosa women, 4 bulimic females, 10 constitutional thinness women, 7 healthy obese females, and 10 normal weight women controls were enrolled in this cross-sectional study, performed in endocrinology unit and academic laboratory. Twelve-point circadian profiles of plasma IL-7 levels were measured in each subject. 24h mean IL-7 plasma levels (pg/ml, mean±SEM) were decreased in restrictive-type anorexia nervosa (123.4±14.4, p<0.0037), bingeing/purging anorexia nervosa (24.2±5.6, p<0.001), recovered restrictive anorexia nervosa (64.2±16.1, p = 0.01) and healthy obese patients (51±3.2, p<0.001) compared to controls (187.7±28.6). Bulimic patients (197.4±42.7) and constitutional thinness patients (264.3±35.8) were similar to controls. Low IL-7 is part of the adaptive profile in restrictive-type anorexia nervosa, confirming its difference with constitutional thinness. Healthy obesity, with low IL-7, is once again in mirror image of constitutional thinness with normal high IL-7.

Thermomechanical In Situ Monitoring of Bi2Te3 Thin Film and Its Relationship with Microstructure and Thermoelectric Performances

NASA Astrophysics Data System (ADS)

Jeong, Min-Woo; Na, Sekwon; Shin, Haishan; Park, Hong-Bum; Lee, Hoo-Jeong; Joo, Young-Chang

2018-07-01

Performance enhancement has been studied for thin-film thermoelectric materials for small-scale energy applications. The microstructural evolution of bismuth telluride (Bi2Te3) was investigated with respect to performance enhancement via in situ thermomechanical analysis due to the post-annealing process. The thermomechanical behavior of Bi2Te3 changes gradually at approximately 200 °C with the formation of a quintuple-layer structure, which was confirmed by X-ray diffraction, transmission electron microscopy and Raman spectroscopy. It was found that highly oriented (006), (0015) was formed with a quintuple-layer structure parallel to the substrate, and the E g 2 Raman vibration mode of Bi2Te3 significantly increased after forming the layer structure with decreased defects. Therefore, the slope of the stress curve was affected by the longer atomic distance of the van der Waals bonds with the formation of (00 l) oriented layered-structure grain. The decreased number of defects in the layer structure affects the electrical and thermal properties of the Bi2Te3 thin film. Due to the microstructural evolution, the power factor of Bi2Te3 was enhanced by approximately 14.8 times by the quintuple-layer structure of Bi2Te3 formed during the annealing process, which contributed to a better understanding of the performance enhancement via post-annealing and to research on other highly oriented layer structure materials.

Thermomechanical In Situ Monitoring of Bi2Te3 Thin Film and Its Relationship with Microstructure and Thermoelectric Performances

NASA Astrophysics Data System (ADS)

Jeong, Min-Woo; Na, Sekwon; Shin, Haishan; Park, Hong-Bum; Lee, Hoo-Jeong; Joo, Young-Chang

2018-04-01

Performance enhancement has been studied for thin-film thermoelectric materials for small-scale energy applications. The microstructural evolution of bismuth telluride (Bi2Te3) was investigated with respect to performance enhancement via in situ thermomechanical analysis due to the post-annealing process. The thermomechanical behavior of Bi2Te3 changes gradually at approximately 200 °C with the formation of a quintuple-layer structure, which was confirmed by X-ray diffraction, transmission electron microscopy and Raman spectroscopy. It was found that highly oriented (006), (0015) was formed with a quintuple-layer structure parallel to the substrate, and the Eg 2Raman vibration mode of Bi2Te3 significantly increased after forming the layer structure with decreased defects. Therefore, the slope of the stress curve was affected by the longer atomic distance of the van der Waals bonds with the formation of (00l) oriented layered-structure grain. The decreased number of defects in the layer structure affects the electrical and thermal properties of the Bi2Te3 thin film. Due to the microstructural evolution, the power factor of Bi2Te3 was enhanced by approximately 14.8 times by the quintuple-layer structure of Bi2Te3 formed during the annealing process, which contributed to a better understanding of the performance enhancement via post-annealing and to research on other highly oriented layer structure materials.

Controlled n-Type Doping of Carbon Nanotube Transistors by an Organorhodium Dimer.

PubMed

Geier, Michael L; Moudgil, Karttikay; Barlow, Stephen; Marder, Seth R; Hersam, Mark C

2016-07-13

Single-walled carbon nanotube (SWCNT) transistors are among the most developed nanoelectronic devices for high-performance computing applications. While p-type SWCNT transistors are easily achieved through adventitious adsorption of atmospheric oxygen, n-type SWCNT transistors require extrinsic doping schemes. Existing n-type doping strategies for SWCNT transistors suffer from one or more issues including environmental instability, limited carrier concentration modulation, undesirable threshold voltage control, and/or poor morphology. In particular, commonly employed benzyl viologen n-type doping layers possess large thicknesses, which preclude top-gate transistor designs that underlie high-density integrated circuit layouts. To overcome these limitations, we report here the controlled n-type doping of SWCNT thin-film transistors with a solution-processed pentamethylrhodocene dimer. The charge transport properties of organorhodium-treated SWCNT thin films show consistent n-type behavior when characterized in both Hall effect and thin-film transistor geometries. Due to the molecular-scale thickness of the organorhodium adlayer, large-area arrays of top-gated, n-type SWCNT transistors are fabricated with high yield. This work will thus facilitate ongoing efforts to realize high-density SWCNT integrated circuits.

Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

NASA Astrophysics Data System (ADS)

Fan, W.; Kabius, B.; Hiller, J. M.; Saha, S.; Carlisle, J. A.; Auciello, O.; Chang, R. P. H.; Ramesh, R.

2003-11-01

The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 °C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlOx, while the oxide layer at the TiAl/Cu interface is an Al2O3-rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlOx interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 °C followed by a rapid thermal annealing at 700 °C. This process significantly reduced the thickness of the TiAlOx layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high dielectric constant (280), low dielectric loss (0.007), and low leakage current (<2×10-8 A/cm2 at 100 kV/cm) were achieved for BST thin film capacitors with Cu-based electrodes.

Thermal characterizations analysis of high-power ThinGaN cool-white light-emitting diodes

NASA Astrophysics Data System (ADS)

Raypah, Muna E.; Devarajan, Mutharasu; Ahmed, Anas A.; Sulaiman, Fauziah

2018-03-01

Analysis of thermal properties plays an important role in the thermal management of high-power (HP) lighting-emitting diodes (LEDs). Thermal resistance, thermal capacitance, and thermal time constant are essential parameters for the optimal design of the LED device and system, particularly for dynamic performance study. In this paper, thermal characterization and thermal time constant of ThinGaN HP LEDs are investigated. Three HP cool-white ThinGaN LEDs from different manufacturers are used in this study. A forward-voltage method using thermal transient tester (T3Ster) system is employed to determine the LEDs' thermal parameters at various operating conditions. The junction temperature transient response is described by a multi-exponential function model to extract thermal time constants. The transient response curve is divided into three layers and expressed by three exponential functions. Each layer is associated with a particular thermal time constant, thermal resistance, and thermal capacitance. It is found that the thermal time constant of LED package is on the order of 22 to 100 ms. Comparison between the experimental results is carried out to show the design effects on thermal performance of the LED package.

Surface Functionalized Nanostructured Ceramic Sorbents for the Effective Collection and Recovery of Uranium from Seawater

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chouyyok, Wilaiwan; Pittman, Jonathan W.; Warner, Marvin G.

2016-05-02

The ability to collect uranium from seawater offers the potential for a nearly limitless fuel supply for nuclear energy. We evaluated the use of functionalized nanostructured sorbents for the collection and recovery of uranium from seawater. Extraction of trace minerals from seawater and brines is challenging due to the high ionic strength of seawater, low mineral concentrations, and fouling of surfaces over time. We demonstrate that rationally assembled sorbent materials that integrate high affinity surface chemistry and high surface area nanostructures into an application relevant micro/macro structure enables collection performance that far exceeds typical sorbent materials. High surface area nanostructuredmore » silica with surface chemistries composed of phosphonic acid, phosphonates, 3,4 hydroxypyridinone, and EDTA showed superior performance for uranium collection. A few phosphorous-based commercial resins, specifically Diphonix and Ln Resin, also performed well. We demonstrate an effective and environmentally benign method of stripping the uranium from the high affinity sorbents using inexpensive nontoxic carbonate solutions. The cyclic use of preferred sorbents and acidic reconditioning of materials was shown to improve performance. Composite thin films composed of the nanostructured sorbents and a porous polymer binder are shown to have excellent kinetics and good capacity while providing an effective processing configuration for trace mineral recovery from solutions. Initial work using the composite thin films shows significant improvements in processing capacity over the previously reported sorbent materials.« less

Chemical stability and electrical performance of dual-active-layered zinc-tin-oxide/indium-gallium-zinc-oxide thin-film transistors using a solution process.

PubMed

Kim, Chul Ho; Rim, You Seung; Kim, Hyun Jae

2013-07-10

We investigated the chemical stability and electrical properties of dual-active-layered zinc-tin-oxide (ZTO)/indium-gallium-zinc-oxide (IGZO) structures (DALZI) with the durability of the chemical damage. The IGZO film was easily corroded or removed by an etchant, but the DALZI film was effectively protected by the high chemical stability of ZTO. Furthermore, the electrical performance of the DALZI thin-film transistor (TFT) was improved by densification compared to the IGZO TFT owing to the passivation of the pin holes or pore sites and the increase in the carrier concentration due to the effect of Sn(4+) doping.

Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS₂ thin film.

PubMed

Tsuboi, Yuka; Wang, Feijiu; Kozawa, Daichi; Funahashi, Kazuma; Mouri, Shinichiro; Miyauchi, Yuhei; Takenobu, Taishi; Matsuda, Kazunari

2015-09-14

Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their characteristic band structure. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cells were significantly improved by inserting a chemical vapor deposition (CVD)-grown, large MoS2 thin-film layer. This layer functions as an effective electron-blocking/hole-transporting layer. We also demonstrated that the photovoltaic properties are enhanced with the increasing number of graphene layers and the decreasing thickness of the MoS2 layer. A high photovoltaic conversion efficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS2/n-Si solar cell.

Structure and enhanced thermochromic performance of low-temperature fabricated VO2/V2O3 thin film

NASA Astrophysics Data System (ADS)

Sun, Guangyao; Cao, Xun; Gao, Xiang; Long, Shiwei; Liang, Mengshi; Jin, Ping

2016-10-01

For VO2-based smart window manufacture, it is a long-standing demand for high-quality thin films deposited at low temperature. Here, the thermochromic films of VO2 were deposited by a magnetron sputtering method at a fairly low temperature of 250 °C without subsequent annealing by embedding a V2O3 interlayer. V2O3 acts as a seed layer to lower the depositing temperature and buffer layer to epitaxial grow VO2 film. The VO2/V2O3 films display high solar modulating ability and narrow hysteresis loop. Our data can serve as a promising point for industrial production with high degree of crystallinity at a low temperature.

High Stability Pentacene Transistors Using Polymeric Dielectric Surface Modifier.

PubMed

Wang, Xiaohong; Lin, Guangqing; Li, Peng; Lv, Guoqiang; Qiu, Longzhen; Ding, Yunsheng

2015-08-01

1,6-bis(trichlorosilyl)hexane (C6Cl), polystyrene (PS), and cross-linked polystyrene (CPS) were investigated as gate dielectric modified layers for high performance organic transistors. The influence of the surface energy, roughness and morphology on the charge transport of the organic thin-film transistors (OTFTs) was investigated. The surface energy and roughness both affect the grain size of the pentacene films which will control the charge carrier mobility of the devices. Pentacene thin-film transistors fabricated on the CPS modified dielectric layers exhibited charge carrier mobility as high as 1.11 cm2 V-1 s-1. The bias stress stability for the CPS devices shows that the drain current only decays 1% after 1530 s and the mobility never decreases until 13530 s.

Development and validation of High-performance Thin-layer Chromatography Method for Simultaneous Determination of Polyphenolic Compounds in Medicinal Plants.

PubMed

Jayachandran Nair, C V; Ahamad, Sayeed; Khan, Washim; Anjum, Varisha; Mathur, Rajani

2017-12-01

Quantitative standardization of plant-based products is challenging albeit essential to maintain their quality. This study aims to develop and validate high-performance thin-layer chromatography (HPTLC) method for the simultaneous determination of rutin (Ru), quercetin (Qu), and gallic acid (Ga) from Psidium guajava Linn. (PG) and Aegle marmelos (L.) Correa. (AM) and correlate with antioxidant activity. The stock solution (1 mg/mL) of standard Ru, Qu, and Ga in methanol: Water (1:1) was serially diluted and spotted (5 μL) on slica gel 60 F 254 thin-layer chromatography plates. Toluene: Ethyl acetate: Formic acid: Methanol (3:4:0.8:0.7, v/v/v) was selected as mobile phase for analysis at 254 nm. Hydroalcoholic (1:1) extracts of leaves of PG and AM were fractionated and similarly analyzed. Antioxidant activity was also determined using 2, 2-diphenyl-1-picrylhydrazyl assay. The developed method was robust and resolved Ru, Qu, and Ga at R f 0.08 ± 0.02, 0.76 ± 0.01, and 0.63 ± 0.02, respectively. The intra-day, interday precision, and interanalyst were <2% relative standard deviation. The limit of detection and limit of quantification for Ru, Qu, and Ga were 4.51, 4.2, 5.27, and 13.67, 12.73, 15.98 ng/spot, respectively. Antioxidant activity (Log 50% inhibition) of PG and AM was 4.947 ± 0.322 and 6.498 ± 0.295, respectively. The developed HPTLC method was rapid, accurate, precise, reproducible, and specific for the simultaneous estimation of Ru, Qu, and Ga. HPTLC method for simultaneous determination and quantification of Rutin, Quercetin and Gallic acid, is reported for quality control of herbal drugs. Abbreviations Used: A: Aqueous fraction; AM: Aegle marmelos L. Correa; B: Butanol fraction; C: Chloroform fraction; EA: Ethyl acetate fraction; Ga: Gallic acid; H: Hexane fraction; HA: Hydroalcoholic extract; HPTLC: High-performance thin-layer chromatography; PG: Psidium guajava ; Qu: Quercetin; Ru: Rutin.

Development of a high efficiency thin silicon solar cell. [fabrication and stability tests

NASA Technical Reports Server (NTRS)

Lindmayer, J.

1976-01-01

One hundred thin (120 microns to 260 microns) silicon-aluminum solar cells were fabricated and tested. Silicon slices were prepared, into which an aluminum alloy was evaporated over a range of temperatures and times. Antireflection coatings of tantalum oxide were applied to the cells. Reflectance of the silicon-aluminum interfaces was correlated to alloy temperature (graphs are shown). Optical measurements of the rear surface-internal reflectance of the cells were performed using a Beckman spectrophotometer. An improved gridline pattern was evaluated and stability tests (thermal cycling tests) were performed. Results show that: (1) a high-index, high-transmittance antireflection coating was obtained; (2) the improved metallization of the cells gave a 60 percent rear surface-internal reflectance, and the cells displayed excellent fill factors and blue response of the spectrum; (3) an improved gridline pattern (5 micron linewidths compared to 13 micron linewidths) resulted in a 1.3 percent improvement in short circuit currents; and (4) the stability tests showed no change in cell properties.

Scalable Indium Phosphide Thin-Film Nanophotonics Platform for Photovoltaic and Photoelectrochemical Devices.

PubMed

Lin, Qingfeng; Sarkar, Debarghya; Lin, Yuanjing; Yeung, Matthew; Blankemeier, Louis; Hazra, Jubin; Wang, Wei; Niu, Shanyuan; Ravichandran, Jayakanth; Fan, Zhiyong; Kapadia, Rehan

2017-05-23

Recent developments in nanophotonics have provided a clear roadmap for improving the efficiency of photonic devices through control over absorption and emission of devices. These advances could prove transformative for a wide variety of devices, such as photovoltaics, photoelectrochemical devices, photodetectors, and light-emitting diodes. However, it is often challenging to physically create the nanophotonic designs required to engineer the optical properties of devices. Here, we present a platform based on crystalline indium phosphide that enables thin-film nanophotonic structures with physical morphologies that are impossible to achieve through conventional state-of-the-art material growth techniques. Here, nanostructured InP thin films have been demonstrated on non-epitaxial alumina inverted nanocone (i-cone) substrates via a low-cost and scalable thin-film vapor-liquid-solid growth technique. In this process, indium films are first evaporated onto the i-cone structures in the desired morphology, followed by a high-temperature step that causes a phase transformation of the indium into indium phosphide, preserving the original morphology of the deposited indium. Through this approach, a wide variety of nanostructured film morphologies are accessible using only control over evaporation process variables. Critically, the as-grown nanotextured InP thin films demonstrate excellent optoelectronic properties, suggesting this platform is promising for future high-performance nanophotonic devices.

Structural, electrical and optical properties of Al-Sn codoped ZnO transparent conducting layer deposited by spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Bedia, A.; Bedia, F. Z.; Aillerie, M.; Maloufi, N.

2017-11-01

Low cost Al-Sn codoped ZnO (ATZO) Transparent Conductive Oxide films were deposited by spray pyrolysis on glass substrate. The influence of Al-Sn codoping on the structural, optical and electrical properties of ZnO thin films was studied by comparing the same properties obtained in undoped ZnO, Al doped ZnO (AZO) and Sn doped ZnO (TZO) thin films. The so-obtained films crystallized in hexagonal wurtzite structure. The morphology and structural defects have been investigated by both High resolution Field Effect Scanning Electron Microscopy (FE-SEM) and Raman spectroscopy at 532 nm excitation source. In the visible region, the undoped and doped films show an average transmittance of the order of 85%, while for ATZO thin film, it is of the order of 72%, which points out a degradation of the optical properties due to the co-doping. The optical band gap of ATZO thin film achieves 3.31eV and this shift, compared to the referred samples is attributed to the Burstein-Moss (BM) and band gap narrowing (BGN) opposite effects which is due to the increase of the carrier concentration in degenerate semiconductors. Within all the samples, the ATZO thin film exhibits the lowest electrical resistivity of 4.56 × 10-3 Ωcm with a Hall mobility equal to 2.13 cm2 V-1s-1, and the highest carrier concentration of 6.41 × 1020 cm-3. The performance of ATZO transparent conductive oxide film are determined by its figure of merit (φTC), found equal to 1.69 10-4 Ω-1, which is a suitable value for potentially high-performance solar cell applications.

High-performance varistors simply by hot-dipping zinc oxide thin films in Pr6O11: Influence of temperature

PubMed Central

Wang, Yang; Peng, Zhijian; Wang, Qi; Wang, Chengbiao; Fu, Xiuli

2017-01-01

High-performance ZnO-Pr6O11 thin-film varistors were fabricated simply by hot-dipping oxygen-deficient zinc oxide thin films in Pr6O11 powder. The films had a composition of ZnO0.81 and a thickness of about 200 nm, which were deposited by radio frequency magnetron sputtering a sintered zinc oxide ceramic target. Special attention was paid on the temperature dependence of the varistors. In 50 min with hot-dipping temperature increased from 300–700 °C, the nonlinear coefficient (α) of the varistors increased, but with higher temperature it decreased again. Correspondingly, the leakage current (IL) decreased first and then increased, owing mainly to the formation and destroying of complete zinc oxide/Pr6O11 grain boundaries. The breakdown field (E1mA) decreased monotonously from 0.02217 to 0.01623 V/nm with increasing temperature (300–800 °C), due to the decreased number of effective grain boundaries in the varistors. The varistors prepared at 700 °C exhibited the optimum nonlinear properties with the highest α = 39.29, lowest IL = 0.02736 mA/cm2, and E1mA = 0.01757 V/nm. And after charge-discharge at room temperature for 1000 times, heating at 100 or 250 °C for up to 100 h, or applying at up to 250 °C, the varistors still performed well. Such nanoscaled thin-film varistors will be very promising in electrical/electronic devices working at low voltage. PMID:28155890

Thin polymeric films for building biohybrid microrobots.

PubMed

Ricotti, Leonardo; Fujie, Toshinori

2017-03-06

This paper aims to describe the disruptive potential that polymeric thin films have in the field of biohybrid devices and to review the recent efforts in this area. Thin (thickness  <  1 mm) and ultra-thin (thickness  <  1 µm) matrices possess a series of intriguing features, such as large surface area/volume ratio, high flexibility, chemical and physical surface tailorability, etc. This enables the fabrication of advanced bio/non-bio interfaces able to efficiently drive cell-material interactions, which are the key for optimizing biohybrid device performances. Thin films can thus represent suitable platforms on which living and artificial elements are coupled, with the aim of exploiting the unique features of living cells/tissues. This may allow to carry out certain tasks, not achievable with fully artificial technologies. In the paper, after a description of the desirable chemical/physical cues to be targeted and of the fabrication, functionalization and characterization procedures to be used for thin and ultra-thin films, the state-of-the-art of biohybrid microrobots based on micro/nano-membranes are described and discussed. The research efforts in this field are rather recent and they focus on: (1) self-beating cells (such as cardiomyocytes) able to induce a relatively large deformation of the underlying substrates, but affected by a limited controllability by external users; (2) skeletal muscle cells, more difficult to engineer in mature and functional contractile tissues, but featured by a higher controllability. In this context, the different materials used and the performances achieved are analyzed. Despite recent interesting advancements and signs of maturity of this research field, important scientific and technological steps are still needed. In the paper some possible future perspectives are described, mainly concerning thin film manipulation and assembly in multilayer 3D systems, new advanced materials to be used for the fabrication of thin films, cell engineering opportunities and modelling/computational efforts.

20 years of KVH fiber optic gyro technology: the evolution from large, low performance FOGs to compact, precise FOGs and FOG-based inertial systems

NASA Astrophysics Data System (ADS)

Napoli, Jay

2016-05-01

Precision fiber optic gyroscopes (FOGs) are critical components for an array of platforms and applications ranging from stabilization and pointing orientation of payloads and platforms to navigation and control for unmanned and autonomous systems. In addition, FOG-based inertial systems provide extremely accurate data for geo-referencing systems. Significant improvements in the performance of FOGs and FOG-based inertial systems at KVH are due, in large part, to advancements in the design and manufacture of optical fiber, as well as in manufacturing operations and signal processing. Open loop FOGs, such as those developed and manufactured by KVH Industries, offer tactical-grade performance in a robust, small package. The success of KVH FOGs and FOG-based inertial systems is due to innovations in key fields, including the development of proprietary D-shaped fiber with an elliptical core, and KVH's unique ThinFiber. KVH continually improves its FOG manufacturing processes and signal processing, which result in improved accuracies across its entire FOG product line. KVH acquired its FOG capabilities, including its patented E•Core fiber, when the company purchased Andrew Corporation's Fiber Optic Group in 1997. E•Core fiber is unique in that the light-guiding core - critical to the FOG's performance - is elliptically shaped. The elliptical core produces a fiber that has low loss and high polarization-maintaining ability. In 2010, KVH developed its ThinFiber, a 170-micron diameter fiber that retains the full performance characteristics of E•Core fiber. ThinFiber has enabled the development of very compact, high-performance open-loop FOGs, which are also used in a line of FOG-based inertial measurement units and inertial navigation systems.

Effectiveness of mechanical thinning and prescribed burning on fire behavior in Pinus nigra forests in NE Spain.

PubMed

Piqué, Míriam; Domènech, Rut

2018-03-15

Fuel treatments can mitigate present and future impacts of climate change by reducing fire intensity and severity. In recent years, Pinus nigra forests in the Mediterranean basin have been dramatically affected by the new risk of highly intense and extreme fires and its distribution area has been reduced. New tools are necessary for assessing the management of these forests so they can adapt to the challenges to come. Our main goal was to evaluate the effects of different fuel treatments on Mediterranean Pinus nigra forests. We assessed the forest response, in terms of forest structure and fire behavior, to different intensities of low thinning treatments followed by different slash prescriptions (resulting in: light thinning and lop and scatter; light thinning and burn; heavy thinning and lop and scatter; heavy thinning and burn; and, untreated control). Treatments that used fire to decrease the resulting slash were the most effective for reducing active crown fires decreasing the rate of spread and flame length more than 89%. Low thinning had an effect on torching potential, but there was no difference between intensities of thinning. Only an outcoming crown fire could spread actively if it was sustained by a high-enough constant wind speed and enough surface fuel load. Overall, treatments reduce fire intensity and treated areas have a more homogenous fire behavior response than untreated areas. This provides opportunities to extinguish the fire and reduce the probability of trees dying from the fire. It would be helpful to include ecological principles and fire behavior criteria in silvicultural treatment guidelines in order to perform more efficient management techniques in the future. Copyright © 2017 Elsevier B.V. All rights reserved.

High- k Gate Dielectrics for Emerging Flexible and Stretchable Electronics.

PubMed

Wang, Binghao; Huang, Wei; Chi, Lifeng; Al-Hashimi, Mohammed; Marks, Tobin J; Facchetti, Antonio

2018-05-22

Recent advances in flexible and stretchable electronics (FSE), a technology diverging from the conventional rigid silicon technology, have stimulated fundamental scientific and technological research efforts. FSE aims at enabling disruptive applications such as flexible displays, wearable sensors, printed RFID tags on packaging, electronics on skin/organs, and Internet-of-things as well as possibly reducing the cost of electronic device fabrication. Thus, the key materials components of electronics, the semiconductor, the dielectric, and the conductor as well as the passive (substrate, planarization, passivation, and encapsulation layers) must exhibit electrical performance and mechanical properties compatible with FSE components and products. In this review, we summarize and analyze recent advances in materials concepts as well as in thin-film fabrication techniques for high- k (or high-capacitance) gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductors. Since thin-film transistors (TFTs) are the key enablers of FSE devices, we discuss TFT structures and operation mechanisms after a discussion on the needs and general requirements of gate dielectrics. Also, the advantages of high- k dielectrics over low- k ones in TFT applications were elaborated. Next, after presenting the design and properties of high- k polymers and inorganic, electrolyte, and hybrid dielectric families, we focus on the most important fabrication methodologies for their deposition as TFT gate dielectric thin films. Furthermore, we provide a detailed summary of recent progress in performance of FSE TFTs based on these high- k dielectrics, focusing primarily on emerging semiconductor types. Finally, we conclude with an outlook and challenges section.

Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment

NASA Astrophysics Data System (ADS)

Wang, Xiao; Zhang, Tian-Bao; Yang, Wen; Zhu, Hao; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

2017-01-01

The effective and high-quality integration of high-k dielectrics on two-dimensional (2D) crystals is essential to the device structure engineering and performance improvement of field-effect transistor (FET) based on the 2D semiconductors. We report a 2D MoS2 transistor with ultra-thin Al2O3 top-gate dielectric (6.1 nm) and extremely low leakage current. Remote forming gas plasma pretreatment was carried out prior to the atomic layer deposition, providing nucleation sites with the physically adsorbed ions on the MoS2 surface. The top gate MoS2 FET exhibited excellent electrical performance, including high on/off current ratio over 109, subthreshold swing of 85 mV/decade and field-effect mobility of 45.03 cm2/V s. Top gate leakage current less than 0.08 pA/μm2 at 4 MV/cm has been obtained, which is the smallest compared with the reported top-gated MoS2 transistors. Such an optimized integration of high-k dielectric in 2D semiconductor FET with enhanced performance is very attractive, and it paves the way towards the realization of more advanced 2D nanoelectronic devices and integrated circuits.

Structural properties and sensing performance of high-k Nd2TiO5 thin layer-based electrolyte-insulator-semiconductor for pH detection and urea biosensing.

PubMed

Pan, Tung-Ming; Lin, Jian-Chi; Wu, Min-Hsien; Lai, Chao-Sung

2009-05-15

For high sensitive pH sensing, an electrolyte-insulator-semiconductor (EIS) device with Nd(2)TiO(5) thin layers fabricated on Si substrates by means of reactive sputtering and the subsequent post-deposition annealing (PDA) treatment was proposed. In this work, the effect of thermal annealing (600, 700, 800, and 900 degrees C) on the structural characteristics of Nd(2)TiO(5) thin layer was investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy. The observed structural properties were then correlated with the resulting pH sensing performances. For enzymatic field-effect-transistors-based urea biosensing, a hybrid configuration of the proposed Nd(2)TiO(5) thin layer with urease-immobilized alginate film attached was established. Within the experimental conditions investigated, the EIS device with the Nd(2)TiO(5) thin layer annealed at 800 degrees C exhibited a higher pH detection sensitivity of 57.2 mV/pH, a lower hysteresis voltage of 2.33 mV, and a lower drift rate of 1.80 mV/h compared to those at other annealing temperatures. These results are attributed to the formation of a thinner low-k interfacial layer at the oxide/Si interface and the higher surface roughness occurred at this annealing temperature. Furthermore, the presented urea biosensor was also proved to be able to detect urea with good linearity (R(2)=0.99) and reasonable sensitivity of 9.52 mV/mM in the urea concentration range of 3-40 mM. As a whole, the present work has provided some fundamental data for the use of Nd(2)TiO(5) thin layer for EIS-based pH detection and the extended application for biosensing.

Inkjet-printed p-type nickel oxide thin-film transistor

NASA Astrophysics Data System (ADS)

Hu, Hailong; Zhu, Jingguang; Chen, Maosheng; Guo, Tailiang; Li, Fushan

2018-05-01

High-performance inkjet-printed nickel oxide thin-film transistors (TFTs) with Al2O3 high-k dielectric have been fabricated using a sol-gel precursor ink. The "coffee ring" effect during the printing process was facilely restrained by modifying the viscosity of the ink to control the outward capillary flow. The impacts on the device performance was studied in detail in consideration of annealing temperature of the nickel oxide film and the properties of dielectric layer. The optimized switching ability of the device were achieved at an annealing temperature of 280 °C on a 50-nm-thick Al2O3 dielectric layer, with a hole mobility of 0.78 cm2/V·s, threshold voltage of -0.6 V and on/off current ratio of 5.3 × 104. The as-printed p-type oxide TFTs show potential application in low-cost, large-area complementary electronic devices.

Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer

PubMed Central

Kumaresan, Yogeenth; Pak, Yusin; Lim, Namsoo; kim, Yonghun; Park, Min-Ji; Yoon, Sung-Min; Youn, Hyoc-Min; Lee, Heon; Lee, Byoung Hun; Jung, Gun Young

2016-01-01

Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O2 gas flow rate of 100:1 sccm and the fabricated TFT exhibited excellent transistor performances with a mobility of 15.67 cm2/Vs, a threshold voltage of 6.4 V and an on/off current ratio of 4.5 × 105. Further, high mechanical stability was achieved by the use of organic/inorganic stacking of dielectric and channel layers. Thus, the IGZO transistor endured unprecedented bending strain up to 3.33% at a bending radius of 1.5 mm with no significant degradation in transistor performances along with a superior reliability up to 1000 cycles. PMID:27876893

Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer.

PubMed

Kumaresan, Yogeenth; Pak, Yusin; Lim, Namsoo; Kim, Yonghun; Park, Min-Ji; Yoon, Sung-Min; Youn, Hyoc-Min; Lee, Heon; Lee, Byoung Hun; Jung, Gun Young

2016-11-23

Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O 2 gas flow rate of 100:1 sccm and the fabricated TFT exhibited excellent transistor performances with a mobility of 15.67 cm 2 /Vs, a threshold voltage of 6.4 V and an on/off current ratio of 4.5 × 10 5 . Further, high mechanical stability was achieved by the use of organic/inorganic stacking of dielectric and channel layers. Thus, the IGZO transistor endured unprecedented bending strain up to 3.33% at a bending radius of 1.5 mm with no significant degradation in transistor performances along with a superior reliability up to 1000 cycles.

The offline combination of thin-layer chromatography and high-performance liquid chromatography with diode array detection and micrOTOF-Q mass spectrometry for the separation and identification of spinochromes from sea urchin (Strongylocentrotus droebachiensis) shells.

PubMed

Shikov, Alexander N; Ossipov, Vladimir I; Martiskainen, Olli; Pozharitskaya, Olga N; Ivanova, Svetlana A; Makarov, Valery G

2011-12-16

Thin-layer chromatography (TLC) with off-line high-performance liquid chromatography coupled to diode array detection and micrOTOF-Q mass spectrometry (HPLC-DAD-MS) resulted in the successful fractionation, separation and identification of spinochrome pigments from sea urchin (Strongylocentrotus droebachiensis) shells. Two fractions of pigments were separated by TLC and eluted with methanol using a TLC-MS interface. HPLC-DAD-MS analysis of the fractions indicated the presence of six sea urchin pigments: spinochrome monomers B and D, three spinochrome dimers (anhydroethylidene-6,6'-bis(2,3,7-trihydroxynaphthazarin) and its isomer and ethylidene-6,6'-bis(2,3,7-trihydroxynaphthazarin)), and one pigment that was preliminary identified as a spinochrome dimer with the structural formula C(22)H(16)O(16). Copyright © 2011 Elsevier B.V. All rights reserved.

Flexible thin-film battery based on solid-like ionic liquid-polymer electrolyte

NASA Astrophysics Data System (ADS)

Li, Qin; Ardebili, Haleh

2016-01-01

The development of high-performance flexible batteries is imperative for several contemporary applications including flexible electronics, wearable sensors and implantable medical devices. However, traditional organic liquid-based electrolytes are not ideal for flexible batteries due to their inherent safety and stability issues. In this study, a non-volatile, non-flammable and safe ionic liquid (IL)-based polymer electrolyte film with solid-like feature is fabricated and incorporated in a flexible lithium ion battery. The ionic liquid is 1-Ethyl-3-methylimidazolium dicyanamide (EMIMDCA) and the polymer is composed of poly(vinylidene fluoride-co-hexafluoropropene) (PVDF-HFP). The electrolyte exhibits good thermal stability (i.e. no weight loss up to 300 °C) and relatively high ionic conductivity (6 × 10-4 S cm-1). The flexible thin-film lithium ion battery based on solid-like electrolyte film is encapsulated using a thermal-lamination process and demonstrates excellent electrochemical performance, in both flat and bent configurations.

Elastic Valve Using Induced-Charge Electro-Osmosis

NASA Astrophysics Data System (ADS)

Sugioka, Hideyuki

2015-06-01

Biomimic devices using induced-charge electro-osmosis (ICEO) is interesting since they have the possibility to realize high-performance functions with simple structures and with low-energy consumption. Thus, inspired by a cilium, we propose a two-dimensional artificial elastic valve using hydrodynamic force due to ICEO with a thin elastic beam in a microfluidic channel and numerically examine the valving performance. By an implicit strongly coupled simulation technique between a fluid and an elastic structure based on the boundary-element method, along with the thin-double-layer approximation, we realize stable calculations and find that the elastic valve using ICEO functions effectively at high frequency with low applied voltages in a realistic pressure flow. Further, we also examine passive motion of the valve; i.e., it stops a reverse flow effectively and releases a forward flow in the channel. We believe that our device can be used in a wide range of microfluidic applications, such as mixers, pumps, etc.

Fabrication and stability investigation of ultra-thin transparent and flexible Cu-Ag-Au tri-layer film on PET

NASA Astrophysics Data System (ADS)

Prakasarao, Ch Surya; D'souza, Slavia Deeksha; Hazarika, Pratim; Karthiselva N., S.; Ramesh Babu, R.; Kovendhan, M.; Kumar, R. Arockia; Joseph, D. Paul

2018-04-01

The need for transparent conducting electrodes with high transmittance, low sheet resistance and flexibility to replace Indium Tin Oxide is ever growing. We have deposited and studied the performance of ultra-thin Cu-Ag-Au tri-layer films over a flexible poly-ethylene terephthalate substrate. Scotch tape test showed good adhesion of the metallic film. Transmittance of the tri-layer was around 40 % in visible region. Optical profiler measurements were done to study the surface features. The XRD pattern revealed that film was amorphous. Sheet resistance measured by four probe technique was around 7.7 Ohm/Δ and was stable up to 423 K. The transport parameters by Hall effect showed high conductivity and carrier concentration with a mobility of 5.58 cm2/Vs. Tests performed in an indigenously designed bending unit indicated the films to be stable both mechanically and electrically even after 50,000 bending cycles.

Functional Laser Trimming Of Thin Film Resistors On Silicon ICs

NASA Astrophysics Data System (ADS)

Mueller, Michael J.; Mickanin, Wes

1986-07-01

Modern Laser Wafer Trimming (LWT) technology achieves exceptional analog circuit performance and precision while maintain-ing the advantages of high production throughput and yield. Microprocessor-driven instrumentation has both emphasized the role of data conversion circuits and demanded sophisticated signal conditioning functions. Advanced analog semiconductor circuits with bandwidths over 1 GHz, and high precision, trimmable, thin-film resistors meet many of todays emerging circuit requirements. Critical to meeting these requirements are optimum choices of laser characteristics, proper materials, trimming process control, accurate modeling of trimmed resistor performance, and appropriate circuit design. Once limited exclusively to hand-crafted, custom integrated circuits, designs are now available in semi-custom circuit configurations. These are similar to those provided for digital designs and supported by computer-aided design (CAD) tools. Integrated with fully automated measurement and trimming systems, these quality circuits can now be produced in quantity to meet the requirements of communications, instrumentation, and signal processing markets.

Host physiological condition regulates parasitic plant performance: Arceuthobium vaginatum subsp. cryptopodum on Pinus ponderosa.

PubMed

Bickford, Christopher P; Kolb, Thomas E; Geils, Brian W

2005-12-01

Much research has focused on effects of plant parasites on host-plant physiology and growth, but little is known about effects of host physiological condition on parasite growth. Using the parasitic dwarf mistletoe Arceuthobium vaginatum subsp. cryptopodum (Viscaceae) and its host Pinus ponderosa, we investigated whether changes in host physiological condition influenced mistletoe shoot development in northern Arizona forests. We conducted two studies in two consecutive years and used forest thinning (i.e., competitive release) to manipulate host physiological condition. We removed dwarf mistletoe shoots in April, before the onset of the growing season, and measured the amount of regrowth in the first season after forest thinning (Study I: n=38 trees; Study II: n=35 trees). Thinning increased tree uptake of water and carbon in both studies, but had no effect on leaf N concentration or delta13C. Mistletoe shoot growth was greater on trees with high uptake of water and carbon in thinned stands than trees with low uptake in unthinned stands. These findings show that increased resource uptake by host trees increases resources to these heterotrophic dwarf mistletoes, and links mistletoe performance to changes in host physiological condition.

Thin Watts-Strogatz networks.

PubMed

de Moura, Alessandro P S

2006-01-01

A modified version of the Watts-Strogatz (WS) network model is proposed, in which the number of shortcuts scales with the network size N as Nalpha, with alpha < 1. In these networks, the ratio of the number of shortcuts to the network size approaches zero as N --> infinity, whereas in the original WS model, this ratio is constant. We call such networks "thin Watts-Strogatz networks." We show that even though the fraction of shortcuts becomes vanishingly small for large networks, they still cause a kind of small-world effect, in the sense that the length L of the network increases sublinearly with the size. We develop a mean-field theory for these networks, which predicts that the length scales as N1-alpha ln N for large N. We also study how a search using only local information works in thin WS networks. We find that the search performance is enhanced compared to the regular network, and we predict that the search time tau scales as N1-alpha/2. These theoretical results are tested using numerical simulations. We comment on the possible relevance of thin WS networks for the design of high-performance low-cost communication networks.

Coated Porous Si for High Performance On-Chip Supercapacitors

NASA Astrophysics Data System (ADS)

Grigoras, K.; Keskinen, J.; Grönberg, L.; Ahopelto, J.; Prunnila, M.

2014-11-01

High performance porous Si based supercapacitor electrodes are demonstrated. High power density and stability is provided by ultra-thin TiN coating of the porous Si matrix. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm3. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing several thousands of charge/discharge cycles.

Laser shape setting of superelastic nitinol wires: Functional properties and microstructure

NASA Astrophysics Data System (ADS)

Tuissi, Ausonio; Coduri, Mauro; Biffi, Carlo Alberto

Shape setting is one of the most important steps in the production route of Nitinol Shape Memory Alloys (SMAs), as it can fix the functional properties, such as the shape memory effect and the superelasticity (SE). The conventional method for making the shape setting is performed at 400-500∘C in furnaces. In this work, a laser beam was adopted for performing straight shape setting on commercially available austenitic Nitinol thin wires. The laser beam, at different power levels, was moved along the wire length for inducing the functional performances. Calorimetric, pseudo-elastic and microstructural features of the laser annealed wires were studied through differential scanning calorimetry, tensile testing and high energy X-ray diffraction, respectively. It can be stated that the laser technology can induce SE in thin Nitinol wires: the wire performances can be modulated in function of the laser power and improved functional properties can be obtained.

Low-Cost Detection of Thin Film Stress during Fabrication

NASA Technical Reports Server (NTRS)

Nabors, Sammy A.

2015-01-01

NASA's Marshall Space Flight Center has developed a simple, cost-effective optical method for thin film stress measurements during growth and/or subsequent annealing processes. Stress arising in thin film fabrication presents production challenges for electronic devices, sensors, and optical coatings; it can lead to substrate distortion and deformation, impacting the performance of thin film products. NASA's technique measures in-situ stress using a simple, noncontact fiber optic probe in the thin film vacuum deposition chamber. This enables real-time monitoring of stress during the fabrication process and allows for efficient control of deposition process parameters. By modifying process parameters in real time during fabrication, thin film stress can be optimized or controlled, improving thin film product performance.

Study of nanostructure and ethanol vapor sensing performance of WO3 thin films deposited by e-beam evaporation method under different deposition angles: application in breath analysis devices

NASA Astrophysics Data System (ADS)

Amani, E.; Khojier, K.; Zoriasatain, S.

2018-01-01

This paper studies the effect of deposition angle on the crystallographic structure, surface morphology, porosity and subsequently ethanol vapor sensing performance of e-beam-evaporated WO3 thin films. The WO3 thin films were deposited by e-beam evaporation technique on SiO2/Si substrates under different deposition angles (0°, 30°, and 60°) and then post-annealed at 500 °C with a flow of oxygen for 4 h. Crystallographic structure and surface morphology of the samples were checked using X-ray diffraction method and atomic force microscopy, respectively. Physical adsorption isotherm was also used to measure the porosity and effective surface area of the samples. The electrical response of the samples was studied to different concentrations of ethanol vapor (10-50 ppm) at the temperature range of 140-260 °C and relative humidity of 80%. The results reveal that the WO3 thin film deposited under 30° angle shows more sensitivity to ethanol vapor than the other samples prepared in this work due to the more crystallinity, porosity, and effective surface area. The investigations also show that the sample deposited at 30° can be a good candidate as a breath analysis device at the operating temperature of 240 °C because of its high response, low detection limit, and reliability at high relative humidity.

Physical properties of high performance fluoride ion conductor BaSnF4 thin films by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Patro, L. N.; Ravi Chandra Raju, N.; Meher, S. R.; Kamala Bharathi, K.

2013-09-01

This article presents the results on the growth and characterization of BaSnF4 thin films on glass substrates prepared by pulsed laser deposition technique. The structural results of BaSnF4 thin film carried out by glancing angle X-ray diffraction technique indicates the formation of the film with similar structure (tetragonal, P4/nmm) to the bulk target material. The absorption coefficient and band gap of the film is determined by suitable analysis of the transmittance spectra. The transport properties of the thin films are studied using impedance spectroscopy in the temperature range of 323-573 K. The frequency-dependent imaginary part of impedance plot shows that the conductivity relaxation is non-Debye in nature. The scaling behavior of the imaginary part of impedance at various frequencies indicates temperature-independent relaxation behavior.

Deposition of hydrogenated silicon clusters for efficient epitaxial growth.

PubMed

Le, Ha-Linh Thi; Jardali, Fatme; Vach, Holger

2018-06-13

Epitaxial silicon thin films grown from the deposition of plasma-born hydrogenated silicon nanoparticles using plasma-enhanced chemical vapor deposition have widely been investigated due to their potential applications in photovoltaic and nanoelectronic device technologies. However, the optimal experimental conditions and the underlying growth mechanisms leading to the high-speed epitaxial growth of thin silicon films from hydrogenated silicon nanoparticles remain far from being understood. In the present work, extensive molecular dynamics simulations were performed to study the epitaxial growth of silicon thin films resulting from the deposition of plasma-born hydrogenated silicon clusters at low substrate temperatures under realistic reactor conditions. There is strong evidence that a temporary phase transition of the substrate area around the cluster impact site to the liquid state is necessary for the epitaxial growth to take place. We predict further that a non-normal incidence angle for the cluster impact significantly facilitates the epitaxial growth of thin crystalline silicon films.

Bending impact on the performance of a flexible Li4Ti5O12-based all-solid-state thin-film battery

PubMed Central

Vereecken, Philippe M.

2018-01-01

Abstract The growing demand of flexible electronic devices is increasing the requirements of their power sources. The effect of bending in thin-film batteries is still not well understood. Here, we successfully developed a high active area flexible all-solid-state battery as a model system that consists of thin-film layers of Li4Ti5O12, LiPON, and Lithium deposited on a novel flexible ceramic substrate. A systematic study on the bending state and performance of the battery is presented. The battery withstands bending radii of at least 14 mm achieving 70% of the theoretical capacity. Here, we reveal that convex bending has a positive effect on battery capacity showing an average increase of 5.5%, whereas concave bending decreases the capacity by 4% in contrast with recent studies. We show that the change in capacity upon bending may well be associated to the Li-ion diffusion kinetic change through the electrode when different external forces are applied. Finally, an encapsulation scheme is presented allowing sufficient bending of the device and operation for at least 500 cycles in air. The results are meant to improve the understanding of the phenomena present in thin-film batteries while undergoing bending rather than showing improvements in battery performance and lifetime. PMID:29868149

Superlattice-based thin-film thermoelectric modules with high cooling fluxes

PubMed Central

Bulman, Gary; Barletta, Phil; Lewis, Jay; Baldasaro, Nicholas; Manno, Michael; Bar-Cohen, Avram; Yang, Bao

2016-01-01

In present-day high-performance electronic components, the generated heat loads result in unacceptably high junction temperatures and reduced component lifetimes. Thermoelectric modules can, in principle, enhance heat removal and reduce the temperatures of such electronic devices. However, state-of-the-art bulk thermoelectric modules have a maximum cooling flux qmax of only about 10 W cm−2, while state-of-the art commercial thin-film modules have a qmax <100 W cm−2. Such flux values are insufficient for thermal management of modern high-power devices. Here we show that cooling fluxes of 258 W cm−2 can be achieved in thin-film Bi2Te3-based superlattice thermoelectric modules. These devices utilize a p-type Sb2Te3/Bi2Te3 superlattice and n-type δ-doped Bi2Te3−xSex, both of which are grown heteroepitaxially using metalorganic chemical vapour deposition. We anticipate that the demonstration of these high-cooling-flux modules will have far-reaching impacts in diverse applications, such as advanced computer processors, radio-frequency power devices, quantum cascade lasers and DNA micro-arrays. PMID:26757675

Characterization of a high performance ultra-thin heat pipe cooling module for mobile hand held electronic devices

NASA Astrophysics Data System (ADS)

Ahamed, Mohammad Shahed; Saito, Yuji; Mashiko, Koichi; Mochizuki, Masataka

2017-11-01

In recent years, heat pipes have been widely used in various hand held mobile electronic devices such as smart phones, tablet PCs, digital cameras. With the development of technology these devices have different user friendly features and applications; which require very high clock speeds of the processor. In general, a high clock speed generates a lot of heat, which needs to be spreaded or removed to eliminate the hot spot on the processor surface. However, it is a challenging task to achieve proper cooling of such electronic devices mentioned above because of their confined spaces and concentrated heat sources. Regarding this challenge, we introduced an ultra-thin heat pipe; this heat pipe consists of a special fiber wick structure named as "Center Fiber Wick" which can provide sufficient vapor space on the both sides of the wick structure. We also developed a cooling module that uses this kind of ultra-thin heat pipe to eliminate the hot spot issue. This cooling module consists of an ultra-thin heat pipe and a metal plate. By changing the width, the flattened thickness and the effective length of the ultra-thin heat pipe, several experiments have been conducted to characterize the thermal properties of the developed cooling module. In addition, other experiments were also conducted to determine the effects of changes in the number of heat pipes in a single module. Characterization and comparison of the module have also been conducted both experimentally and theoretically.

Radiation hardness studies of CdTe thin films for clinical high-energy photon beam detectors

NASA Astrophysics Data System (ADS)

Shvydka, Diana; Parsai, E. I.; Kang, J.

2008-02-01

In radiation oncology applications, the need for higher-quality images has been driven by recent advances in radiation delivery systems that require online imaging. The existing electronic imaging devices commonly used to acquire portal images implement amorphous silicon (a-Si) detector, which exhibits poor image quality. Efforts for improvement have mostly been in the areas of noise and scatter reduction through software. This has not been successful due to inherent shortcomings of a-Si material. Cadmium telluride (CdTe) semiconductor has long been recognized as highly suitable for use in X-ray detectors in both spectroscopic and imaging applications. Development of such systems has mostly concentrated on single crystal CdTe. Recent advances in thin-film deposition technology suggest replacement of crystalline material with its polycrystalline counterpart, offering ease of large-area device fabrication and achievement of higher resolution as well as a favorable cost difference. While bulk CdTe material was found to have superior radiation hardness, thin films have not been evaluated from that prospective, in particular under high-energy photon beam typical of radiation treatment applications. We assess the performance of thin-film CdTe devices utilizing 6 MeV photon beam and find no consistent trend for material degradation under doses far exceeding the typical radiation therapy detector lifetime dose.

Towards ALD thin film stabilized single-atom Pd 1 catalysts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Piernavieja-Hermida, Mar; Lu, Zheng; White, Anderson

Supported precious metal single-atom catalysts have shown interesting activity and selectivity in recent studies. However, agglomeration of these highly mobile mononuclear surface species can eliminate their unique catalytic properties. In this paper, we study a strategy for synthesizing thin film stabilized single-atom Pd 1 catalysts using atomic layer deposition (ALD). The thermal stability of the Pd 1 catalysts is significantly enhanced by creating a nanocavity thin film structure. In situ infrared spectroscopy and Pd K-edge X-ray absorption spectroscopy (XAS) revealed that the Pd 1 was anchored on the surface through chlorine sites. The thin film stabilized Pd 1 catalysts weremore » thermally stable under both oxidation and reduction conditions. The catalytic performance in the methanol decomposition reaction is found to depend on the thickness of protecting layers. While Pd 1 catalysts showed promising activity at low temperature in a methanol decomposition reaction, 14 cycle TiO 2 protected Pd 1 was less active at high temperature. Pd L 3 edge XAS indicated that the low reactivity compared with Pd nanoparticles is due to the strong adsorption of carbon monoxide even at 250 °C. Lastly, these results clearly show that the ALD nanocavities provide a basis for future design of single-atom catalysts that are highly efficient and stable.« less

Towards ALD thin film stabilized single-atom Pd 1 catalysts

DOE PAGES

Piernavieja-Hermida, Mar; Lu, Zheng; White, Anderson; ...

2016-07-27

Supported precious metal single-atom catalysts have shown interesting activity and selectivity in recent studies. However, agglomeration of these highly mobile mononuclear surface species can eliminate their unique catalytic properties. In this paper, we study a strategy for synthesizing thin film stabilized single-atom Pd 1 catalysts using atomic layer deposition (ALD). The thermal stability of the Pd 1 catalysts is significantly enhanced by creating a nanocavity thin film structure. In situ infrared spectroscopy and Pd K-edge X-ray absorption spectroscopy (XAS) revealed that the Pd 1 was anchored on the surface through chlorine sites. The thin film stabilized Pd 1 catalysts weremore » thermally stable under both oxidation and reduction conditions. The catalytic performance in the methanol decomposition reaction is found to depend on the thickness of protecting layers. While Pd 1 catalysts showed promising activity at low temperature in a methanol decomposition reaction, 14 cycle TiO 2 protected Pd 1 was less active at high temperature. Pd L 3 edge XAS indicated that the low reactivity compared with Pd nanoparticles is due to the strong adsorption of carbon monoxide even at 250 °C. Lastly, these results clearly show that the ALD nanocavities provide a basis for future design of single-atom catalysts that are highly efficient and stable.« less

Design of a thin-plate based tunable high-quality narrow passband filter for elastic transverse waves propagate in metals

NASA Astrophysics Data System (ADS)

Zhang, J.; Zeng, L. H.; Hu, C. L.; Yan, W. S.; Pennec, Yan; Hu, N.

2018-03-01

For the elastic SV (transverse) waves in metals, a high-quality narrow passband filter that consists of aligned parallel thin plates with small gaps is designed. In order to obtain a good performance, the thin plates should be constituted by materials with a smaller mass density and Young's modulus, such as polymethylmethacrylate (PMMA), compared to the embedded materials in which the elastic SV waves propagate. Both the theoretical model and the full numerical simulation show that the transmission spectrum of the designed filter demonstrates several peaks with flawless transmission within 0 KHz ˜20 KHz frequency range. The peaks can be readily tuned by manipulating the geometrical parameters of the plates. Therefore, the current design works well for both low and high frequencies with a controllable size. Even for low frequencies on the order of kilohertz, the size of this filter can be still limited to the order of centimeters, which significantly benefits the real applications. The investigation also finds that the same filter is valid when using different metals and the reason behind this is explained theoretically. Additionally, the effect of bonding conditions of interfaces between thin plates and the base material is investigated using a spring model.

Predictors of stunting and thinness in post-menarcheal adolescent girls in rural Bangladesh.

PubMed

Rah, Jee H; Christian, Parul; Shamim, Abu Ahmed; Arju, Ummeh T; Labrique, Alain B; Rashid, Mahbubur

2009-12-01

To assess the nutritional status and risk factors of undernutrition in post-menarcheal girls in rural northern Bangladesh. Cross-sectional data on anthropometric measurements, dietary intake, work activity, morbidity and socio-economic status were collected from 12- to 19-year-old primigravidae (n 209) and never-pregnant adolescents (n 456) matched on age and time since menarche. Multiple regression analyses were conducted to determine predictors of stunting, thinness, upper-arm muscle (UAMZ) and fat area Z-scores (UAFZ) among the adolescent girls. A large proportion of adolescents (49 %) were stunted (height-for-age Z-score <-2) and underweight (40 %; weight-for-age Z-score <-2), but not thin (BMI-for-age <5th percentile; approximately 10 %). The mean (sd) UAMZ and UAFZ of the adolescent girls was -0.3 (0.64) and -0.9 (0.40), respectively. Lean mass increased whereas fat mass declined with age. Both stunting and thinness were positively associated with age and time since menarche (P < 0.05). Young age (12-14 years) and literacy were protective against stunting among pregnant adolescents (OR = 0.29, 95 % CI 0.09, 0.88 and OR = 0.50, 95 % CI 0.26, 0.96, respectively). Having symptoms of diarrhoea or dysentery (OR = 7.40, 95 % CI 1.43, 38.29) predicted thinness and was associated with lower UAMZ and UAFZ among never-pregnant girls (both P < 0.05). Performing light-to-moderate activities was protective against thinness among never-pregnant girls (OR = 0.43, 95 % CI 0.22, 0.82), whereas pregnant adolescents who performed high levels of strenuous activities had greater UAMZ (P < 0.05). Undernutrition was widespread among this post-menarcheal adolescent population. Younger and literate adolescents were less likely to be stunted, whereas thinness and body composition were associated with morbidity and work activity.

Thin Film Approaches to the SRF Cavity Problem: Fabrication and Characterization of Superconducting Thin Films

NASA Astrophysics Data System (ADS)

Beringer, Douglas B.

Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory's CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency - 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m - there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (approximately 45 MV/m for Niobium) where inevitable thermodynamic breakdown occurs. With state of the art niobium based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio-frequency applications.

Nanocomposites of polyimide and mixed oxide nanoparticles for high performance nanohybrid gate dielectrics in flexible thin film transistors

NASA Astrophysics Data System (ADS)

Kim, Ju Hyun; Hwang, Byeong-Ung; Kim, Do-Il; Kim, Jin Soo; Seol, Young Gug; Kim, Tae Woong; Lee, Nae-Eung

2017-05-01

Organic gate dielectrics in thin film transistors (TFTs) for flexible display have advantages of high flexibility yet have the disadvantage of low dielectric constant (low- k). To supplement low- k characteristics of organic gate dielectrics, an organic/inorganic nanocomposite insulator loaded with high- k inorganic oxide nanoparticles (NPs) has been investigated but high loading of high- k NPs in polymer matrix is essential. Herein, compositing of over-coated polyimide (PI) on self-assembled (SA) layer of mixed HfO2 and ZrO2 NPs as inorganic fillers was used to make dielectric constant higher and leakage characteristics lower. A flexible TFT with lower the threshold voltage and high current on/off ratio could be fabricated by using the hybrid gate dielectric structure of the nanocomposite with SA layer of mixed NPs on ultrathin atomic-layer deposited Al2O3. [Figure not available: see fulltext.

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Interconnections & Assembly Low Cost Glass Interposers & Packages MEMS and Sensors GRA Opportunities addressing electrical, mechanical and thermal barriers. Low-cost Glass Interposer and Package Panel-based ultra-thin glass as a high performance, high I/O density, and low cost platform. Interconnections and

Vacuum-integrated electrospray deposition for highly reliable polymer thin film.

PubMed

Park, Soohyung; Lee, Younjoo; Yi, Yeonjin

2012-10-01

Vacuum electrospray deposition (ESD) equipment was designed to prepare polymer thin films. The polymer solution can be injected directly into vacuum system through multi-stage pumping line, so that the solvent residues and ambient contaminants are highly reduced. To test the performance of ESD system, we fabricated organic photovoltaic cells (OPVCs) by injecting polymer solution directly onto the substrate inside a high vacuum chamber. The OPVC fabricated has the structure of Al∕P3HT:PCBM∕PEDOT:PSS∕ITO and was optimized by varying the speed of solution injection and concentration of the solution. The power conversion efficiency (PCE) of the optimized OPVC is 3.14% under AM 1.5G irradiation without any buffer layer at the cathode side. To test the advantages of the vacuum ESD, we exposed the device to atmosphere between the deposition steps of the active layer and cathode. This showed that the PCE of the vacuum processed device is 24% higher than that of the air exposed device and confirms the advantages of the vacuum prepared polymer film for high performance devices.

Top-Contact Self-Aligned Printing for High-Performance Carbon Nanotube Thin-Film Transistors with Sub-Micron Channel Length.

PubMed

Cao, Xuan; Wu, Fanqi; Lau, Christian; Liu, Yihang; Liu, Qingzhou; Zhou, Chongwu

2017-02-28

Semiconducting single-wall carbon nanotubes are ideal semiconductors for printed thin-film transistors due to their excellent electrical performance and intrinsic printability with solution-based deposition. However, limited by resolution and registration accuracy of current printing techniques, previously reported fully printed nanotube transistors had rather long channel lengths (>20 μm) and consequently low current-drive capabilities (<0.2 μA/μm). Here we report fully inkjet printed nanotube transistors with dramatically enhanced on-state current density of ∼4.5 μA/μm by downscaling the devices to a sub-micron channel length with top-contact self-aligned printing and employing high-capacitance ion gel as the gate dielectric. Also, the printed transistors exhibited a high on/off ratio of ∼10 5 , low-voltage operation, and good mobility of ∼15.03 cm 2 V -1 s -1 . These advantageous features of our printed transistors are very promising for future high-definition printed displays and sensing systems, low-power consumer electronics, and large-scale integration of printed electronics.

Passivation of micro-strip gas chambers with an interstitial germanium coating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miyamoto, J.; Knoll, G.F.; Amos, N.

1996-12-31

Micro-strip gas chambers (MSGCs) were constructed in the Solid-State Electronics Laboratory of the University of Michigan and their performance was studied. Many efforts have been made in the past to construct MSGCs that yield high absolute gas gain and stable gas gain. Introducing a thin germanium layer has been effective for passivation but difficulties associated with the poor adhesiveness of the thin layer have been a serious obstacle. This paper reports on a new method used to overcome these difficulties. Unlike the conventional coating method the thin germanium layer was successfully deposited between the strip lines. This technique requires amore » careful geometric alignment of a second photomask with the original micro-strip structure. The resulting detector performance was noteworthy and an absolute gas gain of 2 {center_dot} 10{sup 4} was easily achieved by the new chamber. The chamber`s gain instability was also reduced significantly compared with those without interstitial coating.« less

Improving yield and performance in ZnO thin-film transistors made using selective area deposition.

PubMed

Nelson, Shelby F; Ellinger, Carolyn R; Levy, David H

2015-02-04

We describe improvements in both yield and performance for thin-film transistors (TFTs) fabricated by spatial atomic layer deposition (SALD). These improvements are shown to be critical in forming high-quality devices using selective area deposition (SAD) as the patterning method. Selective area deposition occurs when the precursors for the deposition are prevented from reacting with some areas of the substrate surface. Controlling individual layer quality and the interfaces between layers is essential for obtaining good-quality thin-film transistors and capacitors. The integrity of the gate insulator layer is particularly critical, and we describe a method for forming a multilayer dielectric using an oxygen plasma treatment between layers that improves crossover yield. We also describe a method to achieve improved mobility at the important interface between the semiconductor and the gate insulator by, conversely, avoiding oxygen plasma treatment. Integration of the best designs results in wide design flexibility, transistors with mobility above 15 cm(2)/(V s), and good yield of circuits.

Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolat, Sami, E-mail: bolat@ee.bilkent.edu.tr; Tekcan, Burak; Ozgit-Akgun, Cagla

2015-01-15

Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N{sub 2}/H{sub 2} PA-ALD based GaN channels aremore » observed to have improved stability and transfer characteristics with respect to NH{sub 3} PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N{sub 2}:H{sub 2} ambient.« less

Electrical in-situ characterisation of interface stabilised organic thin-film transistors

PubMed Central

Striedinger, Bernd; Fian, Alexander; Petritz, Andreas; Lassnig, Roman; Winkler, Adolf; Stadlober, Barbara

2015-01-01

We report on the electrical in-situ characterisation of organic thin film transistors under high vacuum conditions. Model devices in a bottom-gate/bottom-contact (coplanar) configuration are electrically characterised in-situ, monolayer by monolayer (ML), while the organic semiconductor (OSC) is evaporated by organic molecular beam epitaxy (OMBE). Thermal SiO2 with an optional polymer interface stabilisation layer serves as the gate dielectric and pentacene is chosen as the organic semiconductor. The evolution of transistor parameters is studied on a bi-layer dielectric of a 150 nm of SiO2 and 20 nm of poly((±)endo,exo-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) and compared to the behaviour on a pure SiO2 dielectric. The thin layer of PNDPE, which is an intrinsically photo-patternable organic dielectric, shows an excellent stabilisation performance, significantly reducing the calculated interface trap density at the OSC/dielectric interface up to two orders of magnitude, and thus remarkably improving the transistor performance. PMID:26457122

Development of quantitative laser ionization mass spectrometry (LIMS). Final report, 1 Aug 87-1 Jan 90

DOE Office of Scientific and Technical Information (OSTI.GOV)

Odom, R.W.

1991-06-04

The objective of the research was to develop quantitative microanalysis methods for dielectric thin films using the laser ionization mass spectrometry (LIMS) technique. The research involved preparation of thin (5,000 A) films of SiO2, Al2O3, MgF2, TiO2, Cr2O3, Ta2O5, Si3N4, and ZrO2, and doping these films with ion implant impurities of 11B, 40Ca, 56Fe, 68Zn, 81Br, and 121Sb. Laser ionization mass spectrometry (LIMS), secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectrometry (RBS) were performed on these films. The research demonstrated quantitative LIMS analysis down to detection levels of 10-100 ppm, and led to the development of (1) a compoundmore » thin film standards product line for the performing organization, (2) routine LIMS analytical methods, and (3) the manufacture of high speed preamplifiers for time-of-flight mass spectrometry (TOF-MS) techniques.« less

Chemiresistive Electronic Nose toward Detection of Biomarkers in Exhaled Breath.

PubMed

Moon, Hi Gyu; Jung, Youngmo; Han, Soo Deok; Shim, Young-Seok; Shin, Beomju; Lee, Taikjin; Kim, Jin-Sang; Lee, Seok; Jun, Seong Chan; Park, Hyung-Ho; Kim, Chulki; Kang, Chong-Yun

2016-08-17

Detection of gas-phase chemicals finds a wide variety of applications, including food and beverages, fragrances, environmental monitoring, chemical and biochemical processing, medical diagnostics, and transportation. One approach for these tasks is to use arrays of highly sensitive and selective sensors as an electronic nose. Here, we present a high performance chemiresistive electronic nose (CEN) based on an array of metal oxide thin films, metal-catalyzed thin films, and nanostructured thin films. The gas sensing properties of the CEN show enhanced sensitive detection of H2S, NH3, and NO in an 80% relative humidity (RH) atmosphere similar to the composition of exhaled breath. The detection limits of the sensor elements we fabricated are in the following ranges: 534 ppt to 2.87 ppb for H2S, 4.45 to 42.29 ppb for NH3, and 206 ppt to 2.06 ppb for NO. The enhanced sensitivity is attributed to the spillover effect by Au nanoparticles and the high porosity of villi-like nanostructures, providing a large surface-to-volume ratio. The remarkable selectivity based on the collection of sensor responses manifests itself in the principal component analysis (PCA). The excellent sensing performance indicates that the CEN can detect the biomarkers of H2S, NH3, and NO in exhaled breath and even distinguish them clearly in the PCA. Our results show high potential of the CEN as an inexpensive and noninvasive diagnostic tool for halitosis, kidney disorder, and asthma.

Operational test of the prototype peewee yarder.

Treesearch

Charles N. Mann; Ronald W. Mifflin

1979-01-01

An operational test of a small, prototype running skyline yarder was conducted early in 1978. Test results indicate that this yarder concept promises a low cost, high performance system for harvesting small logs where skyline methods are indicated. Timber harvest by thinning took place on 12 uphill and 2 downhill skyline roads, and clearcut harvesting was performed on...

Carbon Based Transistors and Nanoelectronic Devices

NASA Astrophysics Data System (ADS)

Rouhi, Nima

Carbon based materials (carbon nanotube and graphene) has been extensively researched during the past decade as one of the promising materials to be used in high performance device technology. In long term it is thought that they may replace digital and/or analog electronic devices, due to their size, near-ballistic transport, and high stability. However, a more realistic point of insertion into market may be the printed nanoelectronic circuits and sensors. These applications include printed circuits for flexible electronics and displays, large-scale bendable electrical contacts, bio-membranes and bio sensors, RFID tags, etc. In order to obtain high performance thin film transistors (as the basic building block of electronic circuits) one should be able to manufacture dense arrays of all semiconducting nanotubes. Besides, graphene synthesize and transfer technology is in its infancy and there is plenty of room to improve the current techniques. To realize the performance of nanotube and graphene films in such systems, we need to economically fabricate large-scale devices based on these materials. Following that the performance control over such devices should also be considered for future design variations for broad range of applications. Here we have first investigated carbon nanotube ink as the base material for our devices. The primary ink used consisted of both metallic and semiconducting nanotubes which resulted in networks suitable for moderate-resistivity electrical connections (such as interconnects) and rfmatching circuits. Next, purified all-semiconducting nanotube ink was used to fabricate waferscale, high performance (high mobility, and high on/off ratio) thin film transistors for printed electronic applications. The parameters affecting device performance were studied in detail to establish a roadmap for the future of purified nanotube ink printed thin film transistors. The trade of between mobility and on/off ratio of such devices was studied and the effect of nanotube network density was explained in detail. On the other hand, graphene transfer technology was explored here as well. Annealing techniques were utilized to deposit clean graphene on arbitrary substrates. Raman spectroscopy and Raman data analysis was used to confirm the clean process. Furthermore, suspended graphene membrane was fabricated using single and multi-layer graphene films. This can make a major impact on graphene based transistors and bio-nano sensors technology.

Rational Design of ZnO:H/ZnO Bilayer Structure for High-Performance Thin-Film Transistors.

PubMed

Abliz, Ablat; Huang, Chun-Wei; Wang, Jingli; Xu, Lei; Liao, Lei; Xiao, Xiangheng; Wu, Wen-Wei; Fan, Zhiyong; Jiang, Changzhong; Li, Jinchai; Guo, Shishang; Liu, Chuansheng; Guo, Tailiang

2016-03-01

The intriguing properties of zinc oxide-based semiconductors are being extensively studied as they are attractive alternatives to current silicon-based semiconductors for applications in transparent and flexible electronics. Although they have promising properties, significant improvements on performance and electrical reliability of ZnO-based thin film transistors (TFTs) should be achieved before they can be applied widely in practical applications. This work demonstrates a rational and elegant design of TFT, composed of poly crystalline ZnO:H/ZnO bilayer structure without using other metal elements for doping. The field-effect mobility and gate bias stability of the bilayer structured devices have been improved. In this device structure, the hydrogenated ultrathin ZnO:H active layer (∼3 nm) could provide suitable carrier concentration and decrease the interface trap density, while thick pure-ZnO layer could control channel conductance. Based on this novel structure, a high field-effect mobility of 42.6 cm(2) V(-1) s(-1), a high on/off current ratio of 10(8) and a small subthreshold swing of 0.13 V dec(-1) have been achieved. Additionally, the bias stress stability of the bilayer structured devices is enhanced compared to the simple single channel layer ZnO device. These results suggest that the bilayer ZnO:H/ZnO TFTs have a great potential for low-cost thin-film electronics.

Quantification of Quercetin Obtained from Allium cepa Lam. Leaves and its Effects on Streptozotocin-induced Diabetic Neuropathy.

PubMed

Dureshahwar, Khan; Mubashir, Mohammed; Une, Hemant Devidas

2017-01-01

Antioxidant potential has protective effects in diabetic neuropathy (DN); hence, the present study was designed with an objective to quantify quercetin from shade-dried leaves of Allium cepa Lam. and to study its effects on streptozotocin (STZ)-induced chronic DN. The shade-dried leaves of A. cepa Lam. were extracted with methanol and then fractionated using ethyl acetate (ACEA). The quantification of quercetin in ACEA was evaluated by high-performance thin layer chromatography (HPTLC). The STZ (40 mg/kg) was administered to Sprague-Dawley rats (180-250 g) maintained at normal housing conditions. The STZ was administered once a day for 3 consecutive days. The elevation in blood glucose was monitored for 3 weeks periodically using flavin adenine dinucleotide-glucose dehydrogenase method by Contour TS glucometer. Rats showing blood glucose above 250 mg/dl were selected for the study. Animals were divided into eight groups. ACEA (25, 50, and 100 mg/kg), quercetin (40 mg/kg), metformin (120 mg/kg), and gabapentin (100 mg/kg) were given orally once a day for 2 weeks. The blood glucose level was again measured at the end of treatment to assess DN. Thermal hyperalgesia, cold allodynia, motor incoordination, and neurotoxicity were studied initially and at the end of 2-week treatment. Biochemical parameters were also evaluated after 2-week drug treatment. The quercetin present in ACEA was 4.82% by HPTLC. All the ACEA treatment reduces blood glucose level at the end of the 2-week study and shows a significant neuroprotective effect in STZ-induced DN in the above experimental models. The quercetin present in ACEA proved protective effect in STZ-induced DN. High-performance thin layer chromatography reveals the presence of 4.82% quercetin in Allium cepa ethyl acetate. (ACEA). Its investigation against various diabetic neuropathy biomarkers has proved that ACEA has significant blood glucose reducing action shown neuroprotective action in thermal hyperalgesia, motor incoordination, and biochemical parameters. Abbreviations Used : HPTLC: High-performance thin layer chromatography, TLC: Thin layer chromatography, UV: Ultraviolet, ACEA: Allium cepa ethyl acetate, STZ: Streptozotocin, LDL: Low-density lipids, HDL: High-density lipids.

Morphological impact of zinc oxide layers on the device performance in thin-film transistors.

PubMed

Faber, Hendrik; Klaumünzer, Martin; Voigt, Michael; Galli, Diana; Vieweg, Benito F; Peukert, Wolfgang; Spiecker, Erdmann; Halik, Marcus

2011-03-01

Zinc oxide thin-films are prepared either by spin coating of an ethanolic dispersion of nanoparticles (NP, diameter 5 nm) or by spray pyrolysis of a zinc acetate dihydrate precursor. High-resolution electron microscopy studies reveal a monolayer of particles for the low temperature spin coating approach and larger crystalline domains of more than 30 nm for the spray pyrolysis technique. Thin-film transistor devices (TFTs) based on spray pyrolysis films exhibit higher electron mobilities of up to 24 cm2 V(-1) s(-1) compared to 0.6 cm2 V(-1) s(-1) for NP based TFTs. These observations were dedicated to a reduced number of grain boundaries within the transistor channel.

Investigation of transition States in bulk and freestanding film polymer glasses.

PubMed

Jain, Tushar S; de Pablo, Juan J

2004-04-16

We have performed transition state searches on the potential energy landscape for bulk and freestanding film polymer glasses and identified connected minima. An analysis of the displacements between minima shows that the sites that undergo the greatest displacement are highly localized in space for both the bulk and the thin-film systems studied. In the case of the thin film, the clusters originate at the surface and penetrate into the center of the film thereby coupling the relaxation in the center of the film to the mobile surface layer. Furthermore, the energy barriers between minima are lower in the thin film than in the bulk system. These findings can rationalize the experimentally observed depression of the glass transition temperature in freestanding polymer films.