Electron-lattice coupling after high-energy deposition in aluminum

NASA Astrophysics Data System (ADS)

Gorbunov, S. A.; Medvedev, N. A.; Terekhin, P. N.; Volkov, A. E.

2015-07-01

This paper presents an analysis of the parameters of highly-excited electron subsystem of aluminum, appearing e.g. after swift heavy ion impact or laser pulse irradiation. For elevated electron temperatures, the electron heat capacity and the screening parameter are evaluated. The electron-phonon approximation of electron-lattice coupling is compared with its precise formulation based on the dynamic structure factor (DSF) formalism. The DSF formalism takes into account collective response of a lattice to excitation including all possible limit cases of this response. In particular, it automatically provides realization of electron-phonon coupling as the low-temperature limit, while switching to the plasma-limit for high electron temperatures. Aluminum is chosen as a good model system for illustration of the presented methodology.

Thermal and Nonthermal Electron-ion Bremsstrahlung Spectrum from High-Temperature Plasmas

NASA Technical Reports Server (NTRS)

Jung, Young-Dae

1994-01-01

Electron-ion bremsstrahlung radiation from high-temperature plasmas is investigated. The first- and second-order Coulomb corrections in the nonrelativistic bremsstrahlung radiation power are obtained by the Elwert-Sommerfeld factor. In this paper, two cases of the electron distributions, the thermal and nonthermal power-law distributions, are considered. The inclusion of Coulomb corrections is necessary in deducing correctly the electron distribution function from radiation data. These results provide the correct information of electron distributions in high-temperature plasmas, such as in inertial confinement fusion plasmas and in the astrophysical hot thermal and nonthermal x-ray sources.

High-temperature fusion of a multielectron leviton

NASA Astrophysics Data System (ADS)

Moskalets, Michael

2018-04-01

The state of electrons injected onto the surface of the Fermi sea depends on temperature. The state is pure at zero temperature and is mixed at finite temperature. In the case of a single-electron injection, such a transformation can be detected as a decrease in shot noise with increasing temperature. In the case of a multielectron injection, the situation is subtler. The mixedness helps the development of quantum-mechanical exchange correlations between injected electrons, even if such correlations are absent at zero temperature. These correlations enhance the shot noise, which in part counteracts the reduction of noise with temperature. Moreover, at sufficiently high temperatures, the correlation contribution to noise predominates over the contribution of individual particles. As a result, in the system of N electrons, the apparent charge (which is revealed via the shot noise) is changed from e at zero temperature to N e at high temperatures. It looks like the exchange correlations glue electrons into one particle of total charge and energy. This point of view is supported by both charge noise and heat noise. Interestingly, in the macroscopic limit, N →∞ , the correlation contribution completely suppresses the effect of temperature on noise.

Evaluation of high temperature dielectric films for high voltage power electronic applications

NASA Technical Reports Server (NTRS)

Suthar, J. L.; Laghari, J. R.

1992-01-01

Three high temperature films, polyimide, Teflon perfluoroalkoxy and poly-P-xylene, were evaluated for possible use in high voltage power electronic applications, such as in high energy density capacitors, cables and microelectronic circuits. The dielectric properties, including permittivity and dielectric loss, were obtained in the frequency range of 50 Hz to 100 kHz at temperatures up to 200 C. The dielectric strengths at 60 Hz were determined as a function of temperature to 250 C. Confocal laser microscopy was performed to diagnose for voids and microimperfections within the film structure. The results obtained indicate that all films evaluated are capable of maintaining their high voltage properties, with minimal degradation, at temperatures up to 200 C. However, above 200 C, they lose some of their electrical properties. These films may therefore become viable candidates for high voltage power electronic applications at high temperatures.

The Conference on High Temperature Electronics

NASA Technical Reports Server (NTRS)

Hamilton, D. J.; Mccormick, J. B.; Kerwin, W. J.; Narud, J. A.

1981-01-01

The status of and directions for high temperature electronics research and development were evaluated. Major objectives were to (1) identify common user needs; (2) put into perspective the directions for future work; and (3) address the problem of bringing to practical fruition the results of these efforts. More than half of the presentations dealt with materials and devices, rather than circuits and systems. Conference session titles and an example of a paper presented in each session are (1) User requirements: High temperature electronics applications in space explorations; (2) Devices: Passive components for high temperature operation; (3) Circuits and systems: Process characteristics and design methods for a 300 degree QUAD or AMP; and (4) Packaging: Presently available energy supply for high temperature environment.

The Conference on High Temperature Electronics

NASA Astrophysics Data System (ADS)

Hamilton, D. J.; McCormick, J. B.; Kerwin, W. J.; Narud, J. A.

The status of and directions for high temperature electronics research and development were evaluated. Major objectives were to (1) identify common user needs; (2) put into perspective the directions for future work; and (3) address the problem of bringing to practical fruition the results of these efforts. More than half of the presentations dealt with materials and devices, rather than circuits and systems. Conference session titles and an example of a paper presented in each session are (1) User requirements: High temperature electronics applications in space explorations; (2) Devices: Passive components for high temperature operation; (3) Circuits and systems: Process characteristics and design methods for a 300 degree QUAD or AMP; and (4) Packaging: Presently available energy supply for high temperature environment.

Development of silicon carbide semiconductor devices for high temperature applications

NASA Technical Reports Server (NTRS)

Matus, Lawrence G.; Powell, J. Anthony; Petit, Jeremy B.

1991-01-01

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.

Electron drift velocity and mobility in graphene

NASA Astrophysics Data System (ADS)

Dong, Hai-Ming; Duan, Yi-Feng; Huang, Fei; Liu, Jin-Long

2018-04-01

We present a theoretical study of the electric transport properties of graphene-substrate systems. The drift velocity, mobility, and temperature of the electrons are self-consistently determined using the Boltzmann equilibrium equations. It is revealed that the electronic transport exhibits a distinctly nonlinear behavior. A very high mobility is achieved with the increase of the electric fields increase. The electron velocity is not completely saturated with the increase of the electric field. The temperature of the hot electrons depends quasi-linearly on the electric field. In addition, we show that the electron velocity, mobility, and electron temperature are sensitive to the electron density. These findings could be employed for the application of graphene for high-field nano-electronic devices.

Advanced Sensor and Packaging Technologies for Intelligent Adaptive Engine Controls (Preprint)

DTIC Science & Technology

2013-05-01

combination of micro-electromechanical systems (MEMS) sensor technology, novel ceramic materials, high - temperature electronics, and advanced harsh...with simultaneous pressure measurements up to 1,000 psi. The combination of a high - temperature , high -pressure-ratio compressor system, and adaptive...combination of micro-electromechanical systems (MEMS) sensor technology, novel ceramic materials, high temperature electronics, and advanced harsh

High temperature electrons exhausted from rf plasma sources along a magnetic nozzle

NASA Astrophysics Data System (ADS)

Takahashi, Kazunori; Akahoshi, Hikaru; Charles, Christine; Boswell, Rod W.; Ando, Akira

2017-08-01

Two dimensional profiles of electron temperature are measured inside and downstream of a radiofrequency plasma thruster source having a magnetic nozzle and being immersed in vacuum. The temperature is estimated from the slope of the fully swept I-V characteristics of a Langmuir probe acquired at each spatial position and with the assumption of a Maxwellian distribution. The results show that the peripheral high temperature electrons in the magnetic nozzle originate from the upstream antenna location and are transported along the "connecting" magnetic field lines. Two-dimensional measurements of electron energy probability functions are also carried out in a second simplified laboratory device consisting of the source contiguously connected to the diffusion chamber: again the high temperature electrons are detected along the magnetic field lines intersecting the wall at the antenna location, even when the antenna location is shifted along the main axis. These results demonstrate that the peripheral energetic electrons in the magnetic nozzle mirror those created in the source tube.

Filtering peripheral high temperature electrons in a cylindrical rf-driven plasmas by an axisymmetric radial magnetic field

NASA Astrophysics Data System (ADS)

Akahoshi, Hikaru; Takahashi, Kazunori; Ando, Akira

2018-03-01

High temperature electrons generated near a radial wall of a cylindrical source tube in a radiofrequency (rf) inductively-coupled plasma is filtered by an axisymmetric radial magnetic field formed near the source exit by locating annular permanent magnets, where the axial magnetic field strength in the radially central region is fairly uniform inside the source tube and is close to zero near the source exit. The source is operated at 3 mTorr in argon and the rf antenna is powered by a 13.56 MHz and 400 W rf generator. Measurement of electron energy probability functions shows the presence of the peripheral high temperature electrons inside the source, while the temperature of the peripheral electrons downstream of the source is observed to be reduced.

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

NASA Technical Reports Server (NTRS)

Mueller, Carl; Alterovitz, Samuel; Croke, Edward; Ponchak, George

2004-01-01

System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.

Satellite Charge Control with Lithium Ion Source and Electron Emission

DTIC Science & Technology

1990-12-01

for the spacecraft charge control. C. THERMIONIC ELECTRON EMISSION Electrons may be emitted by surfaces at high temperature in a process, called...data in the high voltage region and 1300 to 1600 °K temperature range may be fitted to the following equation, for a 50 % lithium sample: log01 =logos...in Figure 15, is similar to a high - temperature quartz structure, yet differs from it in that half of the silicon atoms are repiaced by aluminum atoms

High-Temperature Gas Sensor Array (Electronic Nose) Demonstrated

NASA Technical Reports Server (NTRS)

Hunter, Gary W.

2002-01-01

The ability to measure emissions from aeronautic engines and in commercial applications such as automotive emission control and chemical process monitoring is a necessary first step if one is going to actively control those emissions. One single sensor will not give all the information necessary to determine the chemical composition of a high-temperature, harsh environment. Rather, an array of gas sensor arrays--in effect, a high-temperature electronic "nose"--is necessary to characterize the chemical constituents of a diverse, high-temperature environment, such as an emissions stream. The signals produced by this nose could be analyzed to determine the constituents of the emission stream. Although commercial electronic noses for near-room temperature applications exist, they often depend significantly on lower temperature materials or only one sensor type. A separate development effort necessary for a high-temperature electronic nose is being undertaken by the NASA Glenn Research Center, Case Western Reserve University, Ohio State University, and Makel Engineering, Inc. The sensors are specially designed for hightemperature environments. A first-generation high-temperature electronic nose has been demonstrated on a modified automotive engine. This nose sensor array was composed of sensors designed for hightemperature environments fabricated using microelectromechanical-systems- (MEMS-) based technology. The array included a tin-oxide-based sensor doped for nitrogen oxide (NOx) sensitivity, a SiC-based hydrocarbon (CxHy) sensor, and an oxygen sensor (O2). These sensors operate on different principles--resistor, diode, and electrochemical cell, respectively--and each sensor has very different responses to the individual gases in the environment. A picture showing the sensor head for the array is shown in the photograph on the left and the sensors installed in the engine are shown in the photograph on the right. Electronics are interfaced with the sensors for temperature control and signal conditioning, and packaging designed for high temperatures is necessary for the array to survive the engine environment.

Transient Nonlinear Optical Properties of Thin Film Titanium Nitride

DTIC Science & Technology

2017-03-23

representative of a semiconductor, and their total effect. The effect of carrier heating is shown in light purple. The effect of number of electrons in the...small amount of the excited electrons are heated to a very high temperature. [7] One model for how these hot electrons dissipate energy is called the...two temperature model”. The two temperatures are the temperature of the electron and the temperature of the lattice (or phonon). When heated by an

Improved two-temperature model including electron density of states effects for Au during femtosecond laser pulses

NASA Astrophysics Data System (ADS)

Fang, Ranran; Wei, Hua; Li, Zhihua; Zhang, Duanming

2012-01-01

The electron temperature dependences of the electron-phonon coupling factor and electron heat capacity based on the electron density of states are investigated for precious metal Au under femtosecond laser irradiation. The thermal excitation of d band electrons is found to result in large deviations from the commonly used approximations of linear temperature dependence of the electron heat capacity, and the constant electron-phonon coupling factor. Results of the simulations performed with the two-temperature model demonstrate that the electron-phonon relaxation time becomes short for high fluence laser for Au. The satisfactory agreement between our numerical results and experimental data of threshold fluence indicates that the electron temperature dependence of the thermophysical parameters accounting for the thermal excitation of d band electrons should not be neglected under the condition that electron temperature is higher than 10 4 K.

REVIEW ARTICLE: Unconventional isotope effects in the high-temperature cuprate superconductors

NASA Astrophysics Data System (ADS)

Zhao, Guo-meng; Keller, H.; Conder, K.

2001-07-01

We review various isotope effects in the high-Tc cuprate superconductors to assess the role of the electron-phonon interaction in the basic physics of these materials. Of particular interest are the unconventional isotope effects on the supercarrier mass, on the charge-stripe formation temperature, on the pseudogap formation temperature, on the electron paramagnetic resonance (EPR) linewidth, on the spin-glass freezing temperature and on the antiferromagnetic ordering temperature. The observed unconventional isotope effects strongly suggest that lattice vibrations play an important role in the microscopic pairing mechanism of high-temperature superconductivity.

Radiation and temperature effects on electronic components investigated under the CSTI high capacity power project

NASA Technical Reports Server (NTRS)

Schwarze, Gene E.; Niedra, Janis M.; Frasca, Albert J.; Wieserman, William R.

1993-01-01

The effects of nuclear radiation and high temperature environments must be fully known and understood for the electronic components and materials used in both the Power Conditioning and Control subsystem and the reactor Instrumentation and Control subsystem of future high capacity nuclear space power systems. This knowledge is required by the designer of these subsystems in order to develop highly reliable, long-life power systems for future NASA missions. A review and summary of the experimental results obtained for the electronic components and materials investigated under the power management element of the Civilian Space Technology Initiative (CSTI) high capacity power project are presented: (1) neutron, gamma ray, and temperature effects on power semiconductor switches, (2) temperature and frequency effects on soft magnetic materials; and (3) temperature effects on rare earth permanent magnets.

High-temperature microphone system. [for measuring pressure fluctuations in gases at high temperature

NASA Technical Reports Server (NTRS)

Zuckerwar, A. J. (Inventor)

1979-01-01

Pressure fluctuations in air or other gases in an area of elevated temperature are measured using a condenser microphone located in the area of elevated temperature and electronics for processing changes in the microphone capacitance located outside the area the area and connected to the microphone by means of high-temperature cable assembly. The microphone includes apparatus for decreasing the undesirable change in microphone sensitivity at high temperatures. The high temperature cable assembly operates as a half-wavelength transmission line in an AM carrier system and maintains a large temperature gradient between the two ends of the cable assembly. The processing electronics utilizes a voltage controlled oscillator for automatic tuning thereby increasing the sensitivity of the measuring apparatus.

Simultaneous in situ electron temperature comparisons using Alouette 2 probe and plasma resonance data

NASA Technical Reports Server (NTRS)

Benson, R. F.

1973-01-01

The electron temperatures deduced from Alouette 2 diffuse resonance observations are compared with the temperature obtained from the Alouette 2 cylindrical electrostatic probe experiment using data from 5 mid-to-high latitude telemetry stations. The probe temperature is consistently higher than the diffuse resonance temperature. The average difference ranged from approximately 10% to 40% with the lower values occurring at the lowest altitudes sampled (near 500 km) and at high latitudes (dip latitude greater than 55 deg), and the larger values occurring at high altitudes and lower latitudes. The discrepancy appears to be of geophysical origin since it is dependent on the location of the data sample. The present observations support the view that the often observed radar backscatter - probe electron temperature discrepancy is also of geophysical origin.

Vacuum encapsulated, high temperature diamond amplified cathode capsule and method for making same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rao, Triveni; Walsh, Josh; Gangone, Elizabeth

2015-12-29

A vacuum encapsulated, hermetically sealed cathode capsule for generating an electron beam of secondary electrons, which generally includes a cathode element having a primary emission surface adapted to emit primary electrons, an annular insulating spacer, a diamond window element comprising a diamond material and having a secondary emission surface adapted to emit secondary electrons in response to primary electrons impinging on the diamond window element, a first high-temperature solder weld disposed between the diamond window element and the annular insulating spacer and a second high-temperature solder weld disposed between the annular insulating spacer and the cathode element. The cathode capsulemore » is formed by a high temperature weld process under vacuum such that the first solder weld forms a hermetical seal between the diamond window element and the annular insulating spacer and the second solder weld forms a hermetical seal between the annular spacer and the cathode element whereby a vacuum encapsulated chamber is formed within the capsule.« less

Electronic origin of high-temperature superconductivity in single-layer FeSe superconductor.

PubMed

Liu, Defa; Zhang, Wenhao; Mou, Daixiang; He, Junfeng; Ou, Yun-Bo; Wang, Qing-Yan; Li, Zhi; Wang, Lili; Zhao, Lin; He, Shaolong; Peng, Yingying; Liu, Xu; Chen, Chaoyu; Yu, Li; Liu, Guodong; Dong, Xiaoli; Zhang, Jun; Chen, Chuangtian; Xu, Zuyan; Hu, Jiangping; Chen, Xi; Ma, Xucun; Xue, Qikun; Zhou, X J

2012-07-03

The recent discovery of high-temperature superconductivity in iron-based compounds has attracted much attention. How to further increase the superconducting transition temperature (T(c)) and how to understand the superconductivity mechanism are two prominent issues facing the current study of iron-based superconductors. The latest report of high-T(c) superconductivity in a single-layer FeSe is therefore both surprising and significant. Here we present investigations of the electronic structure and superconducting gap of the single-layer FeSe superconductor. Its Fermi surface is distinct from other iron-based superconductors, consisting only of electron-like pockets near the zone corner without indication of any Fermi surface around the zone centre. Nearly isotropic superconducting gap is observed in this strictly two-dimensional system. The temperature dependence of the superconducting gap gives a transition temperature T(c)~ 55 K. These results have established a clear case that such a simple electronic structure is compatible with high-T(c) superconductivity in iron-based superconductors.

High-temperature electronics

NASA Technical Reports Server (NTRS)

Seng, Gary T.

1987-01-01

In recent years, there was a growing need for electronics capable of sustained high-temperature operation for aerospace propulsion system instrumentation, control and condition monitoring, and integrated sensors. The desired operating temperature in some applications exceeds 600 C, which is well beyond the capability of currently available semiconductor devices. Silicon carbide displays a number of properties which make it very attractive as a semiconductor material, one of which is the ability to retain its electronic integrity at temperatures well above 600 C. An IR-100 award was presented to NASA Lewis in 1983 for developing a chemical vapor deposition process to grow single crystals of this material on standard silicon wafers. Silicon carbide devices were demonstrated above 400 C, but much work remains in the areas of crystal growth, characterization, and device fabrication before the full potential of silicon carbide can be realized. The presentation will conclude with current and future high-temperature electronics program plans. Although the development of silicon carbide falls into the category of high-risk research, the future looks promising, and the potential payoffs are tremendous.

Measuring electron temperature in the extended corona

NASA Technical Reports Server (NTRS)

Hassler, Donald M.; Gardner, L. D.; Kohl, John L.

1992-01-01

A technique for measuring electron temperature in the extended corona from the line profile of the electron scattered component of coronal H I Ly alpha produced by Thomson scattering of chromospheric Ly alpha emission is discussed. Because of the high thermal velocity of electrons at coronal temperatures (approximately 6800 km/s at T(sub e) = 1,500,000 K) the effect of nonthermal velocities and solar wind flows on the electron velocity distribution are negligible. However, the low electron mass which is responsible for the high thermal velocity also results in a very wide profile (approximately equal to 50 A). This wide profile, together with an intensity that is three orders of magnitude weaker than the resonantly scattered component of Ly alpha makes the direct measurement of T(sub e) a challenging observational problem. An evaluation of this technique based on simulated measurements is presented and the subsequent instrumental requirements necessary to make a meaningful determination of the electron temperature are discussed. Estimates of uncertainties in the measured electron temperature are related to critical instrument parameters such as grating stray light suppression.

Power management and distribution technology

NASA Astrophysics Data System (ADS)

Dickman, John Ellis

Power management and distribution (PMAD) technology is discussed in the context of developing working systems for a piloted Mars nuclear electric propulsion (NEP) vehicle. The discussion is presented in vugraph form. The following topics are covered: applications and systems definitions; high performance components; the Civilian Space Technology Initiative (CSTI) high capacity power program; fiber optic sensors for power diagnostics; high temperature power electronics; 200 C baseplate electronics; high temperature component characterization; a high temperature coaxial transformer; and a silicon carbide mosfet.

Power management and distribution technology

NASA Technical Reports Server (NTRS)

Dickman, John Ellis

1993-01-01

Power management and distribution (PMAD) technology is discussed in the context of developing working systems for a piloted Mars nuclear electric propulsion (NEP) vehicle. The discussion is presented in vugraph form. The following topics are covered: applications and systems definitions; high performance components; the Civilian Space Technology Initiative (CSTI) high capacity power program; fiber optic sensors for power diagnostics; high temperature power electronics; 200 C baseplate electronics; high temperature component characterization; a high temperature coaxial transformer; and a silicon carbide mosfet.

Selective Screening of High Temperature Superconductors by Resonant Eddy Current Analysis

DTIC Science & Technology

1990-11-01

observable electronic parameters are both stable and well defined. Further, if the circuit possesses a resonance , then it has well characterized parameters and...Engineers Construction Engineering Research Laboratory - AD-A230 194 Selective Screening of High Temperature Superconductors by Resonant Eddy Current...electrical systems or electronic components from the effects of unwanted electromagnetic energy. With the discovery of High Transition Critical Temperature

Well Monitoring System For EGS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Normann, Randy; Glowka, Dave; Normann, Charles

This grant is a collection of projects designed to move aircraft high temperature electronics technology into the geothermal industry. Randy Normann is the lead. He licensed the HT83SNL00 chip from Sandia National Labs. This chip enables aircraft developed electronics for work within a geothermal well logging tool. However, additional elements are needed to achieve commercially successful logging tools. These elements are offered by a strong list of industrial partners on this grant as: Electrochemical Systems Inc. for HT Rechargeable Batteries, Frequency Management Systems for 300C digital clock, Sandia National Labs for experts in high temperature solder, Honeywell Solid-State Electronics Centermore » for reprogrammable high temperature memory. During the course of this project MagiQ Technologies for high temperature fiber optics.« less

Development of an Integrated Thermocouple for the Accurate Sample Temperature Measurement During High Temperature Environmental Scanning Electron Microscopy (HT-ESEM) Experiments.

PubMed

Podor, Renaud; Pailhon, Damien; Ravaux, Johann; Brau, Henri-Pierre

2015-04-01

We have developed two integrated thermocouple (TC) crucible systems that allow precise measurement of sample temperature when using a furnace associated with an environmental scanning electron microscope (ESEM). Sample temperatures measured with these systems are precise (±5°C) and reliable. The TC crucible systems allow working with solids and liquids (silicate melts or ionic liquids), independent of the gas composition and pressure. These sample holder designs will allow end users to perform experiments at high temperature in the ESEM chamber with high precision control of the sample temperature.

An Overview of the Development of High Temperature Wireless Smart Sensor Technology

NASA Technical Reports Server (NTRS)

Hunter, Gary W.

2014-01-01

The harsh environment inherent in propulsion systems is especially challenging for Smart Sensor Systems; this paper addresses technology development for such applications. A basic sensing system for high temperature wireless pressure monitoring composed of a sensor, electronics, and wireless communication with scavenged power developed for health monitoring of aircraft engines and other high temperature applications has been demonstrated at 475 C. Other efforts will be discussed including a brief overview of the status of high temperature electronics and sensors, as well as their use and applications.

Final Technical Report - 300°C Capable Electronics Platform and Temperature Sensor System For Enhanced Geothermal Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Cheng-Po; Shaddock, David; Sandvik, Peter

2012-11-30

A silicon carbide (SiC) based electronic temperature sensor prototype has been demonstrated to operate at 300°C. We showed continuous operation of 1,000 hours with SiC operational amplifier and surface mounted discreet resistors and capacitors on a ceramic circuit board. This feasibility demonstration is a major milestone in the development of high temperature electronics in general and high temperature geothermal exploration and well management tools in particular. SiC technology offers technical advantages that are not found in competing technologies such as silicon-on-insulator (SOI) at high temperatures of 200°C to 300°C and beyond. The SiC integrated circuits and packaging methods can bemore » used in new product introduction by GE Oil and Gas for high temperature down-hole tools. The existing SiC fabrication facility at GE is sufficient to support the quantities currently demanded by the marketplace, and there are other entities in the United States and other countries capable of ramping up SiC technology manufacturing. The ceramic circuit boards are different from traditional organic-based electronics circuit boards, but the fabrication process is compatible with existing ceramic substrate manufacturing. This project has brought high temperature electronics forward, and brings us closer to commercializing tools that will enable and reduce the cost of enhanced geothermal technology to benefit the public in terms of providing clean renewable energy at lower costs.« less

Evaluation of Advanced COTS Passive Devices for Extreme Temperature Operation

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Dones, Keishla R.

2009-01-01

Electronic sensors and circuits are often exposed to extreme temperatures in many of NASA deep space and planetary surface exploration missions. Electronics capable of operation in harsh environments would be beneficial as they simplify overall system design, relax thermal management constraints, and meet operational requirements. For example, cryogenic operation of electronic parts will improve reliability, increase energy density, and extend the operational lifetimes of space-based electronic systems. Similarly, electronic parts that are able to withstand and operate efficiently in high temperature environments will negate the need for thermal control elements and their associated structures, thereby reducing system size and weight, enhancing its reliability, improving its efficiency, and reducing cost. Passive devices play a critical role in the design of almost all electronic circuitry. To address the needs of systems for extreme temperature operation, some of the advanced and most recently introduced commercial-off-the-shelf (COTS) passive devices, which included resistors and capacitors, were examined for operation under a wide temperature regime. The types of resistors investigated included high temperature precision film, general purpose metal oxide, and wirewound.

Ion and Electron Heating Characteristics of Magnetic Re- Connection in Mast Tokamak Merging Experiment

NASA Astrophysics Data System (ADS)

Tanabe, Hiroshi; Inomoto, Michiaki; Ono, Yasushi; Yamada, Takuma; Imazawa, Ryota; Cheng, Chio-Zong

2016-07-01

We present results of recent studies of high power heating of magnetic reconnection, the fundamental process of several astrophysical events such as solar flare, in the Mega Amp Spherical Tokamak (MAST) - the world largest merging experiment. In addition to the previously reported significant reconnection heating up to ˜1keV [1], detailed local profiles of electron and ion temperature have been measured using a ultra-fine 300 channel Ruby- and a 130 channel YAG-Thomson scattering and a new 32 channel ion Doppler tomography diagnostics [2]. 2D profile measurement of electron temperature revealed highly localized heating structure at the X point with the characteristic scale length of 0.02-0.05m0.3T), a thick layer of closed flux surface surrounding the current sheet sustains the temperature profile for longer time than the electron and ion energy relaxation time ˜4-10ms, finally forming triple peak structures of ion and electron temperatures at the X point and in the downstream. While the peak electron temperature at the X point increases with toroidal field, the bulk electron temperature and the ion temperature in the downstream are unaffected. [1] Y. Ono et.al., Plasma Phys. Control. Fusion 54, 124039 (2012) [2] H. Tanabe et. al., Nucl. Fusion 53, 093027 (2013). [3] H. Tanabe et.al., Phys. Rev. Lett. 115, 215004 (2015)

Superconductivity in electron-doped arsenene

NASA Astrophysics Data System (ADS)

Kong, Xin; Gao, Miao; Yan, Xun-Wang; Lu, Zhong-Yi; Xiang, Tao

2018-04-01

Based on the first-principles density functional theory electronic structure calculation, we investigate the possible phonon-mediated superconductivity in arsenene, a two-dimensional buckled arsenic atomic sheet, under electron doping. We find that the strong superconducting pairing interaction results mainly from the $p_z$-like electrons of arsenic atoms and the $A_1$ phonon mode around the $K$ point, and the superconducting transition temperature can be as high as 30.8 K in the arsenene with 0.2 doped electrons per unit cell and 12\\% applied biaxial tensile strain. This transition temperature is about ten times higher than that in the bulk arsenic under high pressure. It is also the highest transition temperature that is predicted for electron-doped two-dimensional elemental superconductors, including graphene, silicene, phosphorene, and borophene.

Validity of Eucken formula and Stokes’ viscosity relation in high-temperature electronically excited gases

DOE Office of Scientific and Technical Information (OSTI.GOV)

Istomin, V. A.; Kustova, E. V.; Mekhonoshina, M. A.

2014-12-09

In the present work we evaluate the accuracy of the Eucken formula and Stokes’ viscosity relation in high temperature non-equilibrium air species with electronic excitation. The thermal conductivity coefficient calculated using the exact kinetic theory methods is compared with that obtained applying approximate formulas in the temperature range 200–20000 K. A modification of the Eucken formula providing a good agreement with exact calculations is proposed. It is shown that the Stokes viscosity relation is not valid in electronically excited monoatomic gases at temperatures higher than 2000 K.

A Harsh Environment Wireless Pressure Sensing Solution Utilizing High Temperature Electronics

PubMed Central

Yang, Jie

2013-01-01

Pressure measurement under harsh environments, especially at high temperatures, is of great interest to many industries. The applicability of current pressure sensing technologies in extreme environments is limited by the embedded electronics which cannot survive beyond 300 °C ambient temperature as of today. In this paper, a pressure signal processing and wireless transmission module based on the cutting-edge Silicon Carbide (SiC) devices is designed and developed, for a commercial piezoresistive MEMS pressure sensor from Kulite Semiconductor Products, Inc. Equipped with this advanced high-temperature SiC electronics, not only the sensor head, but the entire pressure sensor suite is capable of operating at 450 °C. The addition of wireless functionality also makes the pressure sensor more flexible in harsh environments by eliminating the costly and fragile cable connections. The proposed approach was verified through prototype fabrication and high temperature bench testing from room temperature up to 450 °C. This novel high-temperature pressure sensing technology can be applied in real-time health monitoring of many systems involving harsh environments, such as military and commercial turbine engines. PMID:23447006

A harsh environment wireless pressure sensing solution utilizing high temperature electronics.

PubMed

Yang, Jie

2013-02-27

Pressure measurement under harsh environments, especially at high temperatures, is of great interest to many industries. The applicability of current pressure sensing technologies in extreme environments is limited by the embedded electronics which cannot survive beyond 300 °C ambient temperature as of today. In this paper, a pressure signal processing and wireless transmission module based on the cutting-edge Silicon Carbide (SiC) devices is designed and developed, for a commercial piezoresistive MEMS pressure sensor from Kulite Semiconductor Products, Inc. Equipped with this advanced high-temperature SiC electronics, not only the sensor head, but the entire pressure sensor suite is capable of operating at 450 °C. The addition of wireless functionality also makes the pressure sensor more flexible in harsh environments by eliminating the costly and fragile cable connections. The proposed approach was verified through prototype fabrication and high temperature bench testing from room temperature up to 450 °C. This novel high-temperature pressure sensing technology can be applied in real-time health monitoring of many systems involving harsh environments, such as military and commercial turbine engines.

Spin relaxation in n-type GaAs quantum wells from a fully microscopic approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, J.; Wu, M. W.; Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026

2007-01-15

We perform a full microscopic investigation on the spin relaxation in n-type (001) GaAs quantum wells with an Al{sub 0.4}Ga{sub 0.6}As barrier due to the D'yakonov-Perel' mechanism from nearly 20 K to room temperature by constructing and numerically solving the kinetic spin Bloch equations. We consider all the relevant scattering such as the electron-acoustic-phonon, the electron-longitudinal-optical-phonon, the electron-nonmagnetic-impurity, and the electron-electron Coulomb scattering to the spin relaxation. The spin relaxation times calculated from our theory with a fitting spin splitting parameter are in good agreement with the experimental data by Ohno et al. [Physica E (Amsterdam) 6, 817 (2000)] overmore » the whole temperature regime (from 20 to 300 K). The value of the fitted spin splitting parameter agrees with many experiments and theoretical calculations. We further show the temperature dependence of the spin relaxation time under various conditions such as electron density, impurity density, and well width. We predict a peak solely due to the Coulomb scattering in the spin relaxation time at low temperature (<50 K) in samples with low electron density (e.g., density less than 1x10{sup 11} cm{sup -2}) but high mobility. This peak disappears in samples with high electron density (e.g., 2x10{sup 11} cm{sup -2}) and/or low mobility. The hot-electron spin kinetics at low temperature is also addressed with many features quite different from the high-temperature case predicted.« less

Correlations between wave activity and electron temperature in the Martian upper ionosphere

NASA Astrophysics Data System (ADS)

Fowler, Chris; Andersson, Laila; Ergun, Robert; Andrews, David

2017-04-01

Prior to the Mars Atmosphere and Volatile EvolutioN (MAVEN) mission, only two electron temperature profiles of the Martian ionosphere existed, made by the Viking landers in the late 70s. Since MAVENs arrival at Mars in late 2014, electron temperature (and density) profiles have been measured every orbit, once every 4.5 hours. Recent analysis of this new dataset has shown that the Martian ionospheric electron temperature is significantly warmer than expected by factors of 2-3 above the exobase and within the upper ionosphere. We present correlations between electron temperature and electric field wave power (also measured by MAVEN), and discuss the possibility that such waves (which are likely produced by the Mars-solar wind interaction) may drive electron heating and contribute to the observed high temperatures.

Method for local temperature measurement in a nanoreactor for in situ high-resolution electron microscopy.

PubMed

Vendelbo, S B; Kooyman, P J; Creemer, J F; Morana, B; Mele, L; Dona, P; Nelissen, B J; Helveg, S

2013-10-01

In situ high-resolution transmission electron microscopy (TEM) of solids under reactive gas conditions can be facilitated by microelectromechanical system devices called nanoreactors. These nanoreactors are windowed cells containing nanoliter volumes of gas at ambient pressures and elevated temperatures. However, due to the high spatial confinement of the reaction environment, traditional methods for measuring process parameters, such as the local temperature, are difficult to apply. To address this issue, we devise an electron energy loss spectroscopy (EELS) method that probes the local temperature of the reaction volume under inspection by the electron beam. The local gas density, as measured using quantitative EELS, is combined with the inherent relation between gas density and temperature, as described by the ideal gas law, to obtain the local temperature. Using this method we determined the temperature gradient in a nanoreactor in situ, while the average, global temperature was monitored by a traditional measurement of the electrical resistivity of the heater. The local gas temperatures had a maximum of 56 °C deviation from the global heater values under the applied conditions. The local temperatures, obtained with the proposed method, are in good agreement with predictions from an analytical model. Copyright © 2013 Elsevier B.V. All rights reserved.

Dense simple plasmas as high-temperature liquid simple metals

NASA Technical Reports Server (NTRS)

Perrot, F.

1990-01-01

The thermodynamic properties of dense plasmas considered as high-temperature liquid metals are studied. An attempt is made to show that the neutral pseudoatom picture of liquid simple metals may be extended for describing plasmas in ranges of densities and temperatures where their electronic structure remains 'simple'. The primary features of the model when applied to plasmas include the temperature-dependent self-consistent calculation of the electron charge density and the determination of a density and temperature-dependent ionization state.

Reversed magnetic shear suppression of electron-scale turbulence on NSTX

NASA Astrophysics Data System (ADS)

Yuh, Howard Y.; Levinton, F. M.; Bell, R. E.; Hosea, J. C.; Kaye, S. M.; Leblanc, B. P.; Mazzucato, E.; Smith, D. R.; Domier, C. W.; Luhmann, N. C.; Park, H. K.

2009-11-01

Electron thermal internal transport barriers (e-ITBs) are observed in reversed (negative) magnetic shear NSTX discharges^1. These e-ITBs can be created with either neutral beam heating or High Harmonic Fast Wave (HHFW) RF heating. The e-ITB location occurs at the location of minimum magnetic shear determined by Motional Stark Effect (MSE) constrained equilibria. Statistical studies show a threshold condition in magnetic shear for e-ITB formation. High-k fluctuation measurements at electron turbulence wavenumbers^3 have been made under several different transport regimes, including a bursty regime that limits temperature gradients at intermediate magnetic shear. The growth rate of fluctuations has been calculated immediately following a change in the local magnetic shear, resulting in electron temperature gradient relaxation. Linear gyrokinetic simulation results for NSTX show that while measured electron temperature gradients exceed critical linear thresholds for ETG instability, growth rates can remain low under reversed shear conditions up to high electron temperatures gradients. ^1H. Yuh, et. al., PoP 16, 056120 ^2D.R. Smith, E. Mazzucato et al., RSI 75, 3840 ^3E. Mazzucato, D.R. Smith et al., PRL 101, 075001

High-temperature electronics

NASA Technical Reports Server (NTRS)

Matus, Lawrence G.; Seng, Gary T.

1990-01-01

To meet the needs of the aerospace propulsion and space power communities, the high temperature electronics program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. This program supports a major element of the Center's mission - to perform basic and developmental research aimed at improving aerospace propulsion systems. Research is focused on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of SiC devices.

Report on the Installation and Preparedness of a Protochips Fusion in-situ Heating Holder for TEM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Edmondson, Philip D.

2017-03-01

This brief report documents the procurement and installation of a Protochips Fusion (formerly Aduro) high-temperature, high stability transmission electron microscopy (TEM) specimen holder that allows for the high spatial resolution characterization of material specimens at high temperature in situ of an electron microscope. This specimen holder was specifically procured for use with The FEI Talos F200X Scanning/Transmission Electron Microscope (STEM) in Oak Ridge National Laboratory’s (ORNL’s) Low Activation Materials Development and Analysis (LAMDA) Laboratory. The Protochips Fusion holder will enable high-resolution structural and chemical analysis of irradiated materials at high temperature, becoming a unique capability worldwide, and would encourage high-qualitymore » in situ experiments to be conducted on irradiated materials.« less

Ab initio structure determination of nanocrystals of organic pharmaceutical compounds by electron diffraction at room temperature using a Timepix quantum area direct electron detector.

PubMed

van Genderen, E; Clabbers, M T B; Das, P P; Stewart, A; Nederlof, I; Barentsen, K C; Portillo, Q; Pannu, N S; Nicolopoulos, S; Gruene, T; Abrahams, J P

2016-03-01

Until recently, structure determination by transmission electron microscopy of beam-sensitive three-dimensional nanocrystals required electron diffraction tomography data collection at liquid-nitrogen temperature, in order to reduce radiation damage. Here it is shown that the novel Timepix detector combines a high dynamic range with a very high signal-to-noise ratio and single-electron sensitivity, enabling ab initio phasing of beam-sensitive organic compounds. Low-dose electron diffraction data (∼ 0.013 e(-) Å(-2) s(-1)) were collected at room temperature with the rotation method. It was ascertained that the data were of sufficient quality for structure solution using direct methods using software developed for X-ray crystallography (XDS, SHELX) and for electron crystallography (ADT3D/PETS, SIR2014).

Scatterings and Quantum Effects in (Al ,In )N /GaN Heterostructures for High-Power and High-Frequency Electronics

NASA Astrophysics Data System (ADS)

Wang, Leizhi; Yin, Ming; Khan, Asif; Muhtadi, Sakib; Asif, Fatima; Choi, Eun Sang; Datta, Timir

2018-02-01

Charge transport in the wide-band-gap (Al ,In )N /GaN heterostructures with high carrier density approximately 2 ×1013 cm-2 is investigated over a large range of temperature (270 mK ≤T ≤280 K ) and magnetic field (0 ≤B ≤18 T ). We observe the first evidence of weak localization in the two-dimensional electron gas in this system. From the Shubnikov-de Haas (SdH) oscillations a relatively light effective mass of 0.23 me is determined. Furthermore, the linear dependence with temperature (T <20 K ) of the inelastic scattering rate (τi-1∝T ) is attributed to the phase breaking by electron-electron scattering. Also in the same temperature range the less-than unit ratio of quantum lifetime to Hall transport time (τq/τt<1 ) is taken to signify the dominance of small-angle scattering. Above 20 K, with increasing temperature scattering changes from acoustic phonon to optical phonon scattering, resulting in a rapid decrease in carrier mobility and increase in sheet resistance. Suppression of such scatterings will lead to higher mobility and a way forward to high-power and high-frequency electronics.

Calculating the electron temperature in the lightning channel by continuous spectrum

NASA Astrophysics Data System (ADS)

Xiangcheng, DONG; Jianhong, CHEN; Xiufang, WEI; Ping, YUAN

2017-12-01

Based on the theory of plasma continuous radiation, the relationship between the emission intensity of bremsstrahlung and recombination radiation and the plasma electron temperature is obtained. During the development process of a return stroke of ground flash, the intensity of continuous radiation spectrum is separated on the basis of the spectrums with obviously different luminous intensity at two moments. The electron temperature of the lightning discharge channel is obtained through the curve fitting of the continuous spectrum intensity. It is found that electron temperature increases with the increase of wavelength and begins to reduce after the peak. The peak temperature of the two spectra is close to 25 000 K. To be compared with the result of discrete spectrum, the electron temperature is fitted by the O I line and N II line of the spectrum respectively. The comparison shows that the high temperature value is in good agreement with the temperature of the lightning core current channel obtained from the ion line information, and the low temperature at the high band closes to the calculation result of the atomic line, at a low band is lower than the calculation of the atomic line, which reflects the temperature of the luminous channel of the outer corona.

On the generation of magnetosheath lion roars

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, L.C.; Wu, C.S.; Price, C.P.

1987-03-01

A theoretical model is proposed to discuss the electron dynamics associated with the mirror waves and their effects on the generation of the observed lion roars in the magnetosheath. It is pointed out that the usual double-adiabatic theory of hydromagnetics is not applicable to the electrons in mirror waves. Although the electron magnetic moment is conserved, the energy of each electron in the mirror waves is expected to be constant (because of the high electron speed along the magnetic field). Assuming an initial electron temperature anisotropy, the authors can show that in the low field region the electron temperature andmore » thermal anisotropy are higher than the initial values, whereas in the high field region the electron temperature and anisotropy are lower. This point can lead to a theoretical explanation of the important features of the observed lion roars. The present discussion complements the existing theories in the literature.« less

Characteristics of the Mott transition and electronic states of high-temperature cuprate superconductors from the perspective of the Hubbard model

NASA Astrophysics Data System (ADS)

Kohno, Masanori

2018-04-01

A fundamental issue of the Mott transition is how electrons behaving as single particles carrying spin and charge in a metal change into those exhibiting separated spin and charge excitations (low-energy spin excitation and high-energy charge excitation) in a Mott insulator. This issue has attracted considerable attention particularly in relation to high-temperature cuprate superconductors, which exhibit electronic states near the Mott transition that are difficult to explain in conventional pictures. Here, from a new viewpoint of the Mott transition based on analyses of the Hubbard model, we review anomalous features observed in high-temperature cuprate superconductors near the Mott transition.

Alkylamine capped metal nanoparticle "inks" for printable SERS substrates, electronics and broadband photodetectors.

PubMed

Polavarapu, Lakshminarayana; Manga, Kiran Kumar; Yu, Kuai; Ang, Priscilla Kailian; Cao, Hanh Duyen; Balapanuru, Janardhan; Loh, Kian Ping; Xu, Qing-Hua

2011-05-01

We report a facile and general method for the preparation of alkylamine capped metal (Au and Ag) nanoparticle "ink" with high solubility. Using these metal nanoparticle "inks", we have demonstrated their applications for large scale fabrication of highly efficient surface enhanced Raman scattering (SERS) substrates by a facile solution processing method. These SERS substrates can detect analytes down to a few nM. The flexible plastic SERS substrates have also been demonstrated. The annealing temperature dependent conductivity of the nanoparticle films indicated a transition temperature above which high conductivity was achieved. The transition temperature could be tailored to the plastic compatible temperatures by using proper alkylamine as the capping agent. The ultrafast electron relaxation studies of the nanoparticle films demonstrated that faster electron relaxation was observed at higher annealing temperatures due to stronger electronic coupling between the nanoparticles. The applications of these highly concentrated alkylamine capped metal nanoparticle inks for the printable electronics were demonstrated by printing the oleylamine capped gold nanoparticles ink as source and drain for the graphene field effect transistor. Furthermore, the broadband photoresponse properties of the Au and Ag nanoparticle films have been demonstrated by using visible and near-infrared lasers. These investigations demonstrate that these nanoparticle "inks" are promising for applications in printable SERS substrates, electronics, and broadband photoresponse devices. © The Royal Society of Chemistry 2011

Correlated phonons and the Tc-dependent dynamical phonon anomalies

NASA Astrophysics Data System (ADS)

Hakioğlu, T.; Türeci, H.

1997-11-01

Anomalously large low-temperature phonon anharmonicities can lead to static as well as dynamical changes in the low-temperature properties of the electron-phonon system. In this work, we focus our attention on the dynamically generated low-temperature correlations in an interacting electron-phonon system using a self-consistent dynamical approach in the intermediate coupling range. In the context of the model, the polaron correlations are produced by the charge-density fluctuations which are generated dynamically by the electron-phonon coupling. Conversely, the latter is influenced in the presence of the former. The purpose of this work is to examine the dynamics of this dual mechanism between the two using the illustrative Fröhlich model. In particular, the influence of the low-temperature phonon dynamics on the superconducting properties in the intermediate coupling range is investigated. The influence on the Holstein reduction factor as well as the enhancement in the zero-point fluctuations and in the electron-phonon coupling are calculated numerically. We also examine these effects in the presence of superconductivity. Within this model, the contribution of the electron-phonon interaction as one of the important elements in the mechanisms of superconductivity can reach values as high as 15-20% of the characteristic scale of the lattice vibrational energy. The second motivation of this work is to understand the nature of the Tc-dependent temperature anomalies observed in the Debye-Waller factor, dynamical pair correlations, and average atomic vibrational energies for a number of high-temperature superconductors. In our approach we do not claim nor believe that the electron-phonon interaction is the primary mechanism leading to high-temperature superconductivity. Nevertheless, our calculations suggest that the dynamically induced low-temperature phonon correlation model can account for these anomalies and illustrates their possible common origin. Finally, the relevance of incorporating these low-temperature effects into more realistic models of high-temperature superconductivity including both the charge and spin degrees and other similar ideas existing in the literature are discussed.

Observation of pseudogap in MgB2

NASA Astrophysics Data System (ADS)

Patil, S.; Medicherla, V. R. R.; Ali, Khadiza; Singh, R. S.; Manfrinetti, P.; Wrubl, F.; Dhar, S. K.; Maiti, Kalobaran

2017-11-01

We investigate the electronic structure of a specially prepared highly dense conventional high temperature superconductor, MgB2, employing high resolution photoemission spectroscopy. The spectral evolution close to the Fermi energy is commensurate to BCS descriptions as expected. However, the spectra in the wider energy range reveal the emergence of a pseudogap much above the superconducting transition temperature indicating an apparent departure from the BCS scenario. The energy scale of the pseudogap is comparable to the energy of the E2g phonon mode responsible for superconductivity in MgB2 and the pseudogap can be attributed to the effect of electron-phonon coupling on the electronic structure. These results reveal a scenario of the emergence of the superconducting gap within an electron-phonon coupling induced pseudogap and have significant implications in the study of high temperature superconductors.

High-temperature electronic structure with the Korringa-Kohn-Rostoker Green's function method

NASA Astrophysics Data System (ADS)

Starrett, C. E.

2018-05-01

Modeling high-temperature (tens or hundreds of eV), dense plasmas is challenging due to the multitude of non-negligible physical effects including significant partial ionization and multisite effects. These effects cause the breakdown or intractability of common methods and approximations used at low temperatures, such as pseudopotentials or plane-wave basis sets. Here we explore the Korringa-Kohn-Rostoker Green's function method at these high-temperature conditions. The method is all electron, does not rely on pseudopotentials, and uses a spherical harmonic basis set, and so avoids the aforementioned limitations. It is found to be accurate for solid density aluminum and iron plasmas when compared to a plane-wave method at low temperature, while being able to access high temperatures.

Characteristics of temporal evolution of particle density and electron temperature in helicon discharge

NASA Astrophysics Data System (ADS)

Yang, Xiong; Cheng, Mousen; Guo, Dawei; Wang, Moge; Li, Xiaokang

2017-10-01

On the basis of considering electrochemical reactions and collision relations in detail, a direct numerical simulation model of a helicon plasma discharge with three-dimensional two-fluid equations was employed to study the characteristics of the temporal evolution of particle density and electron temperature. With the assumption of weak ionization, the Maxwell equations coupled with the plasma parameters were directly solved in the whole computational domain. All of the partial differential equations were solved by the finite element solver in COMSOL MultiphysicsTM with a fully coupled method. In this work, the numerical cases were calculated with an Ar working medium and a Shoji-type antenna. The numerical results indicate that there exist two distinct modes of temporal evolution of the electron and ground atom density, which can be explained by the ion pumping effect. The evolution of the electron temperature is controlled by two schemes: electromagnetic wave heating and particle collision cooling. The high RF power results in a high peak electron temperature while the high gas pressure leads to a low steady temperature. In addition, an OES experiment using nine Ar I lines was conducted using a modified CR model to verify the validity of the results by simulation, showing that the trends of temporal evolution of electron density and temperature are well consistent with the numerically simulated ones.

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

NASA Technical Reports Server (NTRS)

1996-01-01

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Single-electron random-number generator (RNG) for highly secure ubiquitous computing applications

NASA Astrophysics Data System (ADS)

Uchida, Ken; Tanamoto, Tetsufumi; Fujita, Shinobu

2007-11-01

Since the security of all modern cryptographic techniques relies on unpredictable and irreproducible digital keys generated by random-number generators (RNGs), the realization of high-quality RNG is essential for secure communications. In this report, a new RNG, which utilizes single-electron phenomena, is proposed. A room-temperature operating silicon single-electron transistor (SET) having nearby an electron pocket is used as a high-quality, ultra-small RNG. In the proposed RNG, stochastic single-electron capture/emission processes to/from the electron pocket are detected with high sensitivity by the SET, and result in giant random telegraphic signals (GRTS) on the SET current. It is experimentally demonstrated that the single-electron RNG generates extremely high-quality random digital sequences at room temperature, in spite of its simple configuration. Because of its small-size and low-power properties, the single-electron RNG is promising as a key nanoelectronic device for future ubiquitous computing systems with highly secure mobile communication capabilities.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mikheev, Evgeny; Himmetoglu, Burak; Kajdos, Adam P.

We analyze and compare the temperature dependence of the electron mobility of two- and three-dimensional electron liquids in SrTiO{sub 3}. The contributions of electron-electron scattering must be taken into account to accurately describe the mobility in both cases. For uniformly doped, three-dimensional electron liquids, the room temperature mobility crosses over from longitudinal optical (LO) phonon-scattering-limited to electron-electron-scattering-limited as a function of carrier density. In high-density, two-dimensional electron liquids, LO phonon scattering is completely screened and the mobility is dominated by electron-electron scattering up to room temperature. The possible origins of the observed behavior and the consequences for approaches to improvemore » the mobility are discussed.« less

Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistor and Its RF Power Efficiency Optimization with Source-Bridged Field-Plate Structure.

PubMed

Kwak, Hyeon-Tak; Chang, Seung-Bo; Jung, Hyun-Gu; Kim, Hyun-Seok

2018-09-01

In this study, we consider the relationship between the temperature in a two-dimensional electron gas (2-DEG) channel layer and the RF characteristics of an AlGaN/GaN high-electron-mobility transistor by changing the geometrical structure of the field-plate. The final goal is to achieve a high power efficiency by decreasing the channel layer temperature. First, simulations were performed to compare and contrast the experimental data of a conventional T-gate head structure. Then, a source-bridged field-plate (SBFP) structure was used to obtain the lower junction temperature in the 2-DEG channel layer. The peak electric field intensity was reduced, and a decrease in channel temperature resulted in an increase in electron mobility. Furthermore, the gate-to-source capacitance was increased by the SBFP structure. However, under the large current flow condition, the SBFP structure had a lower maximum temperature than the basic T-gate head structure, which improved the device electron mobility. Eventually, an optimum position of the SBFP was used, which led to higher frequency responses and improved the breakdown voltages. Hence, the optimized SBFP structure can be a promising candidate for high-power RF devices.

Cyclic evolution of the electron temperature and density in dusty low-pressure radio frequency plasmas with pulsed injection of hexamethyldisiloxane

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garofano, V.; Stafford, L., E-mail: luc.stafford@umontreal.ca, E-mail: kremena.makasheva@laplace.univ-tlse.fr; Despax, B.

2015-11-02

Optical emission spectroscopy was used to analyze the very-low-frequency cyclic evolution of the electron energy and density caused by repetitive formation and loss of dust nanoparticles in argon plasmas with pulsed injection of hexamethyldisiloxane (HMDSO, [CH{sub 3}]{sub 6}Si{sub 2}O). After elaborating a Boltzmann diagram for Ar high-lying levels and a collisional-radiative model for Ar 2p (Paschen notation) states, temperatures characterizing the low- and high-energy parts of the electron population were calculated. Relative electron densities were also estimated from relative line emission intensities. Both temperatures increase when the dust occupation increases, and then decrease when dust is lost. The opposite trendmore » was observed for the electron density. Such cyclic behaviors of the electron energy and electron density in the HMDSO-containing plasmas are in good agreement with the evolution processes in dusty plasmas, in which the formation of negative ions followed by an electron attachment on the surfaces of the nanoparticles is a critical phenomenon driving dust growth.« less

[Study of the effect of heat source separation distance on plasma physical properties in laser-pulsed GMAW hybrid welding based on spectral diagnosis technique].

PubMed

Liao, Wei; Hua, Xue-Ming; Zhang, Wang; Li, Fang

2014-05-01

In the present paper, the authors calculated the plasma's peak electron temperatures under different heat source separation distance in laser- pulse GMAW hybrid welding based on Boltzmann spectrometry. Plasma's peak electron densities under the corresponding conditions were also calculated by using the Stark width of the plasma spectrum. Combined with high-speed photography, the effect of heat source separation distance on electron temperature and electron density was studied. The results show that with the increase in heat source separation distance, the electron temperatures and electron densities of laser plasma did not changed significantly. However, the electron temperatures of are plasma decreased, and the electron densities of are plasma first increased and then decreased.

Evidence of Electron-Hole Imbalance in WTe2 from High-Resolution Angle-Resolved Photoemission Spectroscopy

NASA Astrophysics Data System (ADS)

Wang, Chen-Lu; Zhang, Yan; Huang, Jian-Wei; Liu, Guo-Dong; Liang, Ai-Ji; Zhang, Yu-Xiao; Shen, Bing; Liu, Jing; Hu, Cheng; Ding, Ying; Liu, De-Fa; Hu, Yong; He, Shao-Long; Zhao, Lin; Yu, Li; Hu, Jin; Wei, Jiang; Mao, Zhi-Qiang; Shi, You-Guo; Jia, Xiao-Wen; Zhang, Feng-Feng; Zhang, Shen-Jin; Yang, Feng; Wang, Zhi-Min; Peng, Qin-Jun; Xu, Zu-Yan; Chen, Chuang-Tian; Zhou, Xing-Jiang

2017-08-01

WTe2 has attracted a great deal of attention because it exhibits extremely large and nonsaturating magnetoresistance. The underlying origin of such a giant magnetoresistance is still under debate. Utilizing laser-based angle-resolved photoemission spectroscopy with high energy and momentum resolutions, we reveal the complete electronic structure of WTe2. This makes it possible to determine accurately the electron and hole concentrations and their temperature dependence. We find that, with increasing the temperature, the overall electron concentration increases while the total hole concentration decreases. It indicates that the electron-hole compensation, if it exists, can only occur in a narrow temperature range, and in most of the temperature range there is an electron-hole imbalance. Our results are not consistent with the perfect electron-hole compensation picture that is commonly considered to be the cause of the unusual magnetoresistance in WTe2. We identified a flat band near the Brillouin zone center that is close to the Fermi level and exhibits a pronounced temperature dependence. Such a flat band can play an important role in dictating the transport properties of WTe2. Our results provide new insight on understanding the origin of the unusual magnetoresistance in WTe2.

High Temperature Electronics for Intelligent Harsh Environment Sensors

NASA Technical Reports Server (NTRS)

Evans, Laura J.

2008-01-01

The development of intelligent instrumentation systems is of high interest in both public and private sectors. In order to obtain this ideal in extreme environments (i.e., high temperature, extreme vibration, harsh chemical media, and high radiation), both sensors and electronics must be developed concurrently in order that the entire system will survive for extended periods of time. The semiconductor silicon carbide (SiC) has been studied for electronic and sensing applications in extreme environment that is beyond the capability of conventional semiconductors such as silicon. The advantages of SiC over conventional materials include its near inert chemistry, superior thermomechanical properties in harsh environments, and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

Photosynthesis and Photosynthetic Electron Flow in the Alpine Evergreen Species Quercus guyavifolia in Winter

PubMed Central

Huang, Wei; Hu, Hong; Zhang, Shi-Bao

2016-01-01

Alpine evergreen broadleaf tree species must regularly cope with low night temperatures in winter. However, the effects of low night temperatures on photosynthesis in alpine evergreen broadleaf tree species are unclear. We measured the diurnal photosynthetic parameters before and after cold snap for leaves of Quercus guyavifolia growing in its native habitat at 3290 m. On 11 and 12 December 2013 (before cold snap), stomatal and mesophyll conductances (gs and gm), CO2 assimilation rate (An), and total electron flow through PSII (JPSII) at daytime were maintained at high levels. The major action of alternative electron flow was to provide extra ATP for primary metabolisms. On 20 December 2013 (after cold snap), the diurnal values of gs, gm, An, and JPSII at daytime largely decreased, mainly due to the large decrease in night air temperature. Meanwhile, the ratio of photorespiration and alternative electron flow to JPSII largely increased on 20 December. Furthermore, the high levels of alternative electron flow were accompanied with low rates of extra ATP production. A quantitative limitation analysis reveals that the gm limitation increased on 20 December with decreased night air temperature. Therefore, the night air temperature was an important determinant of stomatal/mesophyll conductance and photosynthesis. When photosynthesis is inhibited following freezing night temperatures, photorespiration and alternative electron flow are important electron sinks, which support the role of photorespiration and alternative electron flow in photoportection for alpine plants under low temperatures. PMID:27812359

A Two-Fluid, MHD Coronal Model

NASA Technical Reports Server (NTRS)

Suess, Steven T.; Wang, A.-H.; Wu, S. T.; Poletto, G.; McComas, D. J.

1998-01-01

We describe first results from a numerical two-fluid MHD model of the global structure of the solar corona. The model is two-fluid in the sense that it accounts for the collisional energy exchange between protons and electrons. As in our single-fluid model, volumetric heat and momentum sources are required to produce high speed wind from coronal holes, low speed wind above streamers, and mass fluxes similar to the empirical solar wind. By specifying different proton and electron heating functions we obtain a high proton temperature in the coronal hole and a relatively low proton temperature in the streamer (in comparison with the electron temperature). This is consistent with inferences from SOHO/UVCS, and with the Ulysses/SWOOPS proton and electron temperature measurements which we show from the fast latitude scan. The density in the coronal hole between 2 solar radii and 5 solar radii (2RS and 5RS) is similar to the density reported from SPARTAN 201-01 measurements by Fisher and Guhathakurta. The proton mass flux scaled to 1 AU is 2.4 x 10(exp 8)/sq cm s, which is consistent with Ulysses observations. Inside the closed field region, the density is sufficiently high so that the simulation gives equal proton and electron temperatures due to the high collision rate. In open field regions (in the coronal hole and above the streamer) the proton and electron temperatures differ by varying amounts. In the streamer, the temperature and density are similar to those reported empirically by Li et al and the plasma beta is larger than unity everywhere above approx. 1.5 R(sub s), as it is in all other MHD coronal streamer models.

Ab initio structure determination of nanocrystals of organic pharmaceutical compounds by electron diffraction at room temperature using a Timepix quantum area direct electron detector

PubMed Central

van Genderen, E.; Clabbers, M. T. B.; Das, P. P.; Stewart, A.; Nederlof, I.; Barentsen, K. C.; Portillo, Q.; Pannu, N. S.; Nicolopoulos, S.; Gruene, T.; Abrahams, J. P.

2016-01-01

Until recently, structure determination by transmission electron microscopy of beam-sensitive three-dimensional nanocrystals required electron diffraction tomography data collection at liquid-nitrogen temperature, in order to reduce radiation damage. Here it is shown that the novel Timepix detector combines a high dynamic range with a very high signal-to-noise ratio and single-electron sensitivity, enabling ab initio phasing of beam-sensitive organic compounds. Low-dose electron diffraction data (∼0.013 e− Å−2 s−1) were collected at room temperature with the rotation method. It was ascertained that the data were of sufficient quality for structure solution using direct methods using software developed for X-ray crystallography (XDS, SHELX) and for electron crystallography (ADT3D/PETS, SIR2014). PMID:26919375

Proceedings of the Conference on High-temperature Electronics

NASA Technical Reports Server (NTRS)

1981-01-01

The development of electronic devices for use in high temperature environments is addressed. The instrumentational needs of planetary exploration, fossil and nuclear power reactors, turbine engine monitoring, and well logging are defined. Emphasis is place on the fabrication and performance of materials and semiconductor devices, circuits and systems and packaging.

High Temperature Pt/Alumina Co-Fired System for 500 C Electronic Packaging Applications

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Neudeck, Philip G.; Spry, David J.; Beheim, Glenn M.; Hunter, Gary W.

2015-01-01

Gold thick-film metallization and 96 alumina substrate based prototype packaging system developed for 500C SiC electronics and sensors is briefly reviewed, the needs of improvement are discussed. A high temperature co-fired alumina material system based packaging system composed of 32-pin chip-level package and printed circuit board is discussed for packaging 500C SiC electronics and sensors.

Investigation of high temperature fracture of T-111 and ASTAR-811C

NASA Technical Reports Server (NTRS)

Gold, R. E.

1971-01-01

The high temperature deformation and fracture behavior of T-111 and ASTAR-811C were studied over the temperature range 982 to 2205 C (1800 to 4000 F). As-cast and wrought-recrystallized material as well as GTA welds in sheet and plate were evaluated using conventional tensile and creep tests. Post test examinations were performed using optical metallography, scanning electron microscopy and transmission electron microscopy. A high temperature region of reduced ductility, in terms of tensile elongation, was identified for both alloys. The reduction in tensile elongation became more severe with increase in grain size, being near catastrophic for the as-cast specimens. Optical and electron metallography indicated that even for failures at very low total strain, considerable deformation of a very localized nature had occurred prior to fracture.

Electron heating due to microwave photoexcitation in the high mobility GaAs/AlGaAs two dimensional electron system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramanayaka, A. N.; Mani, R. G.; Wegscheider, W.

2013-12-04

We extract the electron temperature in the microwave photo-excited high mobility GaAs/AlGaAs two dimensional electron system (2DES) by studying the influence of microwave radiation on the amplitude of Shubnikov-de Haas oscillations (SdHOs) in a regime where the cyclotron frequency, ω{sub c}, and the microwave angular frequency, ω, satisfy 2ω ≤ ω{sub c} ≤ 3.5ω The results indicate that increasing the incident microwave power has a weak effect on the amplitude of the SdHOs and therefore the electron temperature, in comparison to the influence of modest temperature changes on the dark-specimen SdH effect. The results indicate negligible electron heating under modestmore » microwave photo-excitation, in good agreement with theoretical predictions.« less

NSSEFF Designing New Higher Temperature Superconductors

DTIC Science & Technology

2017-04-13

electronic structure calculations are integrated with the synthesis of new superconducting materials, with the aim of providing a rigorous test of the...apparent association of high temperature superconductivity with electron delocalization transitions occurring at quantum critical points. We will use...realistic electronic structure calculations to assess which transition metal monopnictides are closest to electron delocalization, and hence optimal for

Anomalous Transport in High Beta Poloidal DIII-D Discharges

NASA Astrophysics Data System (ADS)

Pankin, A.; Garofalo, A.; Kritz, A.; Rafiq, T.; Weiland, J.

2016-10-01

Dominant instabilities that drive anomalous transport in high beta poloidal DIII-D discharges are investigated using the MMM7.1, and TGLF models in the predictive integrated modeling TRANSP code. The ion thermal transport is found to be strongly reduced in these discharges, but turbulence driven by the ITG modes along with the neoclassical transport still play a role in determining the ion temperature profiles. The electron thermal transport driven by the ETG modes impact the electron temperature profiles. The E × B flow shear is found to have a small effect in reducing the electron thermal transport. The Shafranov shift is found to strongly reduce the anomalous transport in the high beta poloidal DIII-D discharges. The reduction of Shafranov shift can destroy the ion internal transport barrier and can result in significantly lower core temperatures. The MMM7.1 model predicts electron and ion temperature profiles reasonably well, but it fails to accurately predict the properties of electron internal transport barrier, which indicates that the ETG model in MMM7.1 needs to be improved in the high beta poloidal operational regime. Research supported by the Office of Science, US DOE.

Ion Temperature Measurements in an electron beam ion trap (EBIT)

NASA Astrophysics Data System (ADS)

Beiersdorfer, P.; Decaux, V.; Widmann, K.

1997-11-01

An electron beam ion trap consists of a Penning-type cylindrical trap traversed by a high-energy (<= 200 keV), high-density (Ne <= 10^13 cm-3) electron beam. Ions are trapped by the space charge potential of the electron beam, a static potential on the end electrodes, and a 3-T axial magnetic field [1]. The ions are heated by the electron beam and leave the trap once their kinetic energy suffices to overcome the potential barriers. Using high-resolution x-ray spectroscopy, we have made systematic measurements of the temperature of Ti^20+ and Cs^45+ ions in the trap [2]. The dependence of the ion temperature on operating parameters, such as trapping potential, beam current, and neutral gas pressure, will be presented. Temperatures as low as 15.4 ± 4.4 eV and as high as 2 keV were observed. *Work performed under the auspices of the U.S.D.o.E. by Lawrence Livermore National Laboratory under contract No. W-7405-ENG-48. [1] M. Levine et al., Phys. Scripta T22, 157 (1989). [2]P. Beiersdorfer et al., PRL 77, 5356 (1996); P. Beiersdorfer, in AIP Conf. Proc. No. 389, p. 121 (1997).

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Willems van Beveren, L. H., E-mail: laurensw@unimelb.edu.au; Bowers, H.; Ganesan, K.

2016-06-14

Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here, we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at. %. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to mapmore » out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.« less

TU-H-BRC-06: Temperature Simulation of Tungsten and W25Re Targets to Deliver High Dose Rate 10 MV Photons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, J; Trovati, S; Loo, B

Purpose: To study the impact of electron beam size, target thickness, and target temperature on the ability of the flattening filter-free mode (FFF) treatment head to deliver high-dose-rate irradiations. Methods: The dose distribution and transient temperature of the X-ray target under 10 MeV electron beam with pulse length of 5 microseconds, and repetition rate of 1000 Hz was studied. A MCNP model was built to calculate the percentage depth dose (PPD) distribution in a water phantom at a distance of 100 cm. ANSYS software was used to run heat transfer simulations. The PPD and temperature for both tungsten and W25Remore » targets for different electron beam sizes (FHWM 0.2, 0.5, 1 and 2 mm) and target thickness (0.2 to 2 mm) were studied. Results: Decreasing the target thickness from 1 mm to 0.5 mm, caused a surface dose increase about 10 percent. For both target materials, the peak temperature was about 1.6 times higher for 0.5 mm electron beam compared to the 1 mm beam after reaching their equilibrium. For increasing target thicknesses, the temperature rise caused by the first pulse is similar for all thicknesses, however the temperature difference for subsequent pulses becomes larger until a constant ratio is reached. The target peak temperature after reaching equilibrium can be calculated by adding the steady state temperature and the amplitude of the temperature oscillation. Conclusion: This work indicates the potential to obtain high dose rate irradiation by selecting target material, geometry and electron beam parameters. W25Re may not outperformed tungsten when the target is thick due to its relatively low thermal conductivity. The electron beam size only affects the target temperature but not the PPD. Thin target is preferred to obtain high dose rate and low target temperature, however, the resulting high surface dose is a major concern. NIH funding:R21 EB015957-01; DOD funding:W81XWH-13-1-0165 BL, PM, PB, and RF are founders of TibaRay, Inc. BL is also a borad member. BL and PM have received research grants from Varian Medical System, Inc. and RaySearch Laboratory. RF is an employee of Siemens Healthcare GmbH.« less

Low-Temperature Postfunctionalization of Highly Conductive Oxide Thin-Films toward Solution-Based Large-Scale Electronics.

PubMed

Ban, Seok-Gyu; Kim, Kyung-Tae; Choi, Byung Doo; Jo, Jeong-Wan; Kim, Yong-Hoon; Facchetti, Antonio; Kim, Myung-Gil; Park, Sung Kyu

2017-08-09

Although transparent conducting oxides (TCOs) have played a key role in a wide range of solid-state electronics from conventional optoelectronics to emerging electronic systems, the processing temperature and conductivity of solution-processed materials seem to be far exceeding the thermal limitations of soft materials and insufficient for high-perfomance large-area systems, respectively. Here, we report a strategy to form highly conductive and scalable solution-processed oxide materials and their successful translation into large-area electronic applications, which is enabled by photoassisted postfunctionalization at low temperature. The low-temperature fabrication of indium-tin-oxide (ITO) thin films was achieved by using photoignited combustion synthesis combined with photoassisted reduction process under hydrogen atmosphere. It was noteworthy that the photochemically activated hydrogens on ITO surface could be triggered to facilitate highly crystalline oxygen deficient structure allowing significant increase of carrier concentration and mobility through film microstructure modifications. The low-temperature postfunctionalized ITO films demonstrated conductivity of >1607 S/cm and sheet resistance of <104 Ω/□ under the process temperature of less than 300 °C, which are comparable to those of vacuum-deposited and high-temperature annealed ITO films. Based on the photoassisted postfunctionalization route, all-solution-processed transparent metal-oxide thin-film-transistors and large-area integrated circuits with the ITO bus lines were demonstrated, showing field-effect mobilities of >6.5 cm 2 V -1 s -1 with relatively good operational stability and oscillation frequency of more than 1 MHz in 7-stage ring oscillators, respectively.

Large-Velocity Saturation in Thin-Film Black Phosphorus Transistors.

PubMed

Chen, Xiaolong; Chen, Chen; Levi, Adi; Houben, Lothar; Deng, Bingchen; Yuan, Shaofan; Ma, Chao; Watanabe, Kenji; Taniguchi, Takashi; Naveh, Doron; Du, Xu; Xia, Fengnian

2018-05-22

A high saturation velocity semiconductor is appealing for applications in electronics and optoelectronics. Thin-film black phosphorus (BP), an emerging layered semiconductor, shows a high carrier mobility and strong mid-infrared photoresponse at room temperature. Here, we report the observation of high intrinsic saturation velocity in 7 to 11 nm thick BP for both electrons and holes as a function of charge-carrier density, temperature, and crystalline direction. We distinguish a drift velocity transition point due to the competition between the electron-impurity and electron-phonon scatterings. We further achieve a room-temperature saturation velocity of 1.2 (1.0) × 10 7 cm s -1 for hole (electron) carriers at a critical electric field of 14 (13) kV cm -1 , indicating an intrinsic current-gain cutoff frequency ∼20 GHz·μm for radio frequency applications. Moreover, the current density is as high as 580 μA μm -1 at a low electric field of 10 kV cm -1 . Our studies demonstrate that thin-film BP outperforms silicon in terms of saturation velocity and critical field, revealing its great potential in radio-frequency electronics, high-speed mid-infrared photodetectors, and optical modulators.

Thermionic Properties of Carbon Based Nanomaterials Produced by Microhollow Cathode PECVD

NASA Technical Reports Server (NTRS)

Haase, John R.; Wolinksy, Jason J.; Bailey, Paul S.; George, Jeffrey A.; Go, David B.

2015-01-01

Thermionic emission is the process in which materials at sufficiently high temperature spontaneously emit electrons. This process occurs when electrons in a material gain sufficient thermal energy from heating to overcome the material's potential barrier, referred to as the work function. For most bulk materials very high temperatures (greater than 1500 K) are needed to produce appreciable emission. Carbon-based nanomaterials have shown significant promise as emission materials because of their low work functions, nanoscale geometry, and negative electron affinity. One method of producing these materials is through the process known as microhollow cathode PECVD. In a microhollow cathode plasma, high energy electrons oscillate at very high energies through the Pendel effect. These high energy electrons create numerous radical species and the technique has been shown to be an effective method of growing carbon based nanomaterials. In this work, we explore the thermionic emission properties of carbon based nanomaterials produced by microhollow cathode PECVD under a variety of synthesis conditions. Initial studies demonstrate measureable current at low temperatures (approximately 800 K) and work functions (approximately 3.3 eV) for these materials.

High-temperature electron-hole superfluidity with strong anisotropic gaps in double phosphorene monolayers

NASA Astrophysics Data System (ADS)

Saberi-Pouya, S.; Zarenia, M.; Perali, A.; Vazifehshenas, T.; Peeters, F. M.

2018-05-01

Excitonic superfluidity in double phosphorene monolayers is investigated using the BCS mean-field equations. Highly anisotropic superfluidity is predicted where we found that the maximum superfluid gap is in the Bose-Einstein condensate (BEC) regime along the armchair direction and in the BCS-BEC crossover regime along the zigzag direction. We estimate the highest Kosterlitz-Thouless transition temperature with maximum value up to ˜90 K with onset carrier densities as high as 4 ×1012cm-2 . This transition temperature is significantly larger than what is found in double electron-hole few-layers graphene. Our results can guide experimental research toward the realization of anisotropic condensate states in electron-hole phosphorene monolayers.

Determination of electron temperature in a penning discharge by the helium line ratio method

NASA Technical Reports Server (NTRS)

Richardson, R. W.

1975-01-01

The helium line ratio technique was used to determine electron temperatures in a toroidal steady-state Penning discharge operating in helium. Due to the low background pressure, less than .0001 torr, and the low electron density, the corona model is expected to provide a good description of the excitation processes in this discharge. In addition, by varying the Penning discharge anode voltage and background pressure, it is possible to vary the electron temperature as measured by the line ratio technique over a wide range (10 to 100+ eV). These discharge characteristics allow a detailed comparison of electron temperatures measured from different possible line ratios over a wide range of temperatures and under reproducible steady-state conditions. Good agreement is found between temperatures determined from different neutral line ratios, but use of the helium ion line results in a temperature systematically 10 eV high compared to that from the neutral lines.

Energy Storage of Polyarylene Ether Nitriles at High Temperature

NASA Astrophysics Data System (ADS)

Tang, Xiaohe; You, Yong; Mao, Hua; Li, Kui; Wei, Renbo; Liu, Xiaobo

2018-03-01

Polyarylene ether nitrile (PEN) was synthesized and used as film capacitors for energy storage at high temperature. Scanning electron microscopy observation indicated that the films of PEN have pinholes at nanoscales which restricted the energy storage properties of the material. The pinhole shadowing effect through which the energy storage properties of PEN were effectively improved to be 2.3 J/cm3 was observed by using the overlapped film of PEN. The high glass transition temperature (T g) of PEN was as high as 216 °C and PEN film showed stable dielectric constant, breakdown strength and energy storage density before the T g. The PEN films will be a potential candidate as high performance electronic storage materials used at high temperature.

Performance of High-Speed PWM Control Chips at Cryogenic Temperatures

NASA Technical Reports Server (NTRS)

Elbuluk, Malik E.; Gerber, Scott; Hammoud, Ahmad; Patterson, Richard; Overton, Eric

2001-01-01

The operation of power electronic systems at cryogenic temperatures is anticipated in many NASA space missions such as planetary exploration and deep space probes. In addition to surviving the space hostile environment, electronics capable of low temperature operation would contribute to improving circuit performance, increasing system efficiency, and reducing development and launch costs. As part of the NASA Glenn Low Temperature Electronics Program, several commercial high-speed Pulse Width Modulation (PWM) chips have been characterized in terms of their performance as a function of temperature in the range of 25 to -196 C (liquid nitrogen). These chips ranged in their electrical characteristics, modes of control, packaging options, and applications. The experimental procedures along with the experimental data obtained on the investigated chips are presented and discussed.

Two-temperature model in molecular dynamics simulations of cascades in Ni-based alloys

DOE PAGES

Zarkadoula, Eva; Samolyuk, German; Weber, William J.

2017-01-03

In high-energy irradiation events, energy from the fast moving ion is transferred to the system via nuclear and electronic energy loss mechanisms. The nuclear energy loss results in the creation of point defects and clusters, while the energy transferred to the electrons results in the creation of high electronic temperatures, which can affect the damage evolution. In this paper, we perform molecular dynamics simulations of 30 keV and 50 keV Ni ion cascades in nickel-based alloys without and with the electronic effects taken into account. We compare the results of classical molecular dynamics (MD) simulations, where the electronic effects aremore » ignored, with results from simulations that include the electronic stopping only, as well as simulations where both the electronic stopping and the electron-phonon coupling are incorporated, as described by the two temperature model (2T-MD). Finally, our results indicate that the 2T-MD leads to a smaller amount of damage, more isolated defects and smaller defect clusters.« less

Silicon Carbide Integrated Circuit Chip

NASA Image and Video Library

2015-02-17

A multilevel interconnect silicon carbide integrated circuit chip with co-fired ceramic package and circuit board recently developed at the NASA GRC Smart Sensors and Electronics Systems Branch for high temperature applications. High temperature silicon carbide electronics and compatible packaging technologies are elements of instrumentation for aerospace engine control and long term inner-solar planet explorations.

Recent Advances in the Development of Processable High-Temperature POLYMERS1

NASA Astrophysics Data System (ADS)

Meador, Michael A.

1998-08-01

High-temperature polymers have found widespread use in aerospace and electronics applications. This review deals with recent developments in the chemistry of these materials that have led to improvements in processability and high-temperature stability.

Electronic structure of the bismuth family of high-temperature superconductors

NASA Astrophysics Data System (ADS)

Feng, Donglai

High temperature superconductivity remains the central intellectual problem in condensed matter physics fifteen years after its discovery. Angle resolved photoemission spectroscopy (ARPES) directly probes the electronic structure, and has played an important role in the field of high temperature superconductors. With the recent advances in sample growth and the photoemission technique, we are able to study the electronic structure in great detail, and address regimes that were previously inaccessible. This thesis work contains systematic photoemission studies of the electronic structure of the Bi-family of high temperature superconductors, which include the single-layer system (Bi2201), the bi-layer system (Bi2212), and the tri-layer system (Bi2223). We show that, unlike conventional BCS superconductors, phase coherence information emerges in the single particle excitation spectrum of high temperature superconductors as the superconducting peak in Bi2212. The universality and various properties of this superconducting peak are studied in various systems. We argue that the origin of the superconducting peak may provide the key to understanding the mechanism of High-Tc superconductors. In addition, we identified a new experimental energy scale in the bilayer material, the anisotropic intra-bilayer coupling energy. For a long time, it was predicted that this energy scale would cause bilayer band splitting. We observe this phenomenon, for the first time, in heavily overdoped Bi2212. This new observation requires the revision of the previous picture of the electronic excitation in the Brillouin zone boundary. As the first ARPES study of a trilayer system, various detailed electronic properties of Bi2223 are examined. We show that, comparing with Bi2212, both superconducting gap and relative superconducting peak intensity become larger in Bi2223, however, the strength of the interlayer coupling within each unit cell is possibly weaker. These results suggest that the large superconducting phase transition temperature in a high temperature superconductor is associated with parameters that cause both large pairing strength and strong phase coherence in the system. The number of CuO2 layers in each unit cell is just one of the factors that affect these parameters.

Electronics Demonstrated for Low- Temperature Operation

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammond, Ahmad; Gerber, Scott S.

2000-01-01

The operation of electronic systems at cryogenic temperatures is anticipated for many NASA spacecraft, such as planetary explorers and deep space probes. For example, an unheated interplanetary probe launched to explore the rings of Saturn would experience an average temperature near Saturn of about 183 C. Electronics capable of low-temperature operation in the harsh deep space environment also would help improve circuit performance, increase system efficiency, and reduce payload development and launch costs. An ongoing research and development program on low-temperature electronics at the NASA Glenn Research Center at Lewis Field is focusing on the design of efficient power systems that can survive and exploit the advantages of low-temperature environments. The targeted systems, which are mission driven, include converters, inverters, controls, digital circuits, and special-purpose circuits. Initial development efforts successfully demonstrated the low-temperature operation and cold-restart of several direct-current/direct-current (dc/dc) converters based on different types of circuit design, some with superconducting inductors. The table lists some of these dc/dc converters with their properties, and the photograph shows a high-voltage, high-power dc/dc converter designed for an ion propulsion system for low-temperature operation. The development efforts of advanced electronic systems and the supporting technologies for low-temperature operation are being carried out in-house and through collaboration with other Government agencies, industry, and academia. The Low Temperature Electronics Program supports missions and development programs at NASA s Jet Propulsion Laboratory and Goddard Space Flight Center. The developed technologies will be transferred to commercial end users for applications such as satellite infrared sensors and medical diagnostic equipment.

Importance of Electronic Correlations and Unusual Excitonic Effects in Formamidinium Lead Halide Perovskites

NASA Astrophysics Data System (ADS)

Whitcher, T. J.; Zhu, J.-X.; Chi, X.; Hu, H.; Zhao, Daming; Asmara, T. C.; Yu, X.; Breese, M. B. H.; Castro Neto, A. H.; Lam, Y. M.; Wee, A. T. S.; Chia, Elbert E. M.; Rusydi, A.

2018-04-01

Hybrid inorganic-organic perovskites have recently attracted much interest because of both rich fundamental sciences and potential applications such as the primary energy-harvesting material in solar cells. However, an understanding of electronic and optical properties, particularly the complex dielectric function, of these materials is still lacking. Here, we report on the electronic and optical properties of selective perovskites using temperature-dependent spectroscopic ellipsometry, x-ray absorption spectroscopy supported by first-principles calculations. Surprisingly, the perovskite FA0.85Cs0.15PbI2.9Br0.1 has a very high density of low-energy excitons that increases with increasing temperature even at room temperature, which is not seen in any other material. This is found to be due to the strong, unscreened electron-electron and partially screened electron-hole interactions, which then tightly connect low- and high-energy bands caused by doping.

High-temperature electronics applications in space exploration

NASA Astrophysics Data System (ADS)

Jurgens, R. F.

1982-05-01

One of the most exciting applications of high-temperature electronics is related to the exploration of the planet Venus. On this planet the atmospheric temperatures range from about 170 K at elevations of 100 km to a searing 730 K near the surface. Mechanisms for exploring the atmosphere might include balloons, airplanes, surface landers, and surface-launched probes. Balloons, for example, could fly in the region from 20 (320 C at 22 bars) to 60 km (-20 C at 0.2 bar). Suitable balloon fabrics presently exclude excursions to lower altitudes; however, adequate electronic systems could survive to 325 C. Small airplanes would require more sophisticated electronics for guidance and control. Long life surface landers would most likely be developed first, as these could be used to measure long-term variations in weather. Ranging transponders would be important for ephemeris development, measurement of spin state, and studies of general relativity. Surface temperatures of 460 C and pressures of 90 bars present a challenge to the developers of such instruments. Other space applications for high-temperature electronics include transponders for the surface of Mercury, near solar drag-free orbiters, and deep atmospheric penetrators for Jupiter and Saturn. Each of these has its own particular problems with respect to instrumentation adequate to meet the desired scientific goals. This paper is primarily concerned with defining possible mission applications, the required electronic systems, and the approaches that are currently being studied for their development.

High-temperature electronics applications in space exploration

NASA Technical Reports Server (NTRS)

Jurgens, R. F.

1982-01-01

One of the most exciting applications of high-temperature electronics is related to the exploration of the planet Venus. On this planet the atmospheric temperatures range from about 170 K at elevations of 100 km to a searing 730 K near the surface. Mechanisms for exploring the atmosphere might include balloons, airplanes, surface landers, and surface-launched probes. Balloons, for example, could fly in the region from 20 (320 C at 22 bars) to 60 km (-20 C at 0.2 bar). Suitable balloon fabrics presently exclude excursions to lower altitudes; however, adequate electronic systems could survive to 325 C. Small airplanes would require more sophisticated electronics for guidance and control. Long life surface landers would most likely be developed first, as these could be used to measure long-term variations in weather. Ranging transponders would be important for ephemeris development, measurement of spin state, and studies of general relativity. Surface temperatures of 460 C and pressures of 90 bars present a challenge to the developers of such instruments. Other space applications for high-temperature electronics include transponders for the surface of Mercury, near solar drag-free orbiters, and deep atmospheric penetrators for Jupiter and Saturn. Each of these has its own particular problems with respect to instrumentation adequate to meet the desired scientific goals. This paper is primarily concerned with defining possible mission applications, the required electronic systems, and the approaches that are currently being studied for their development.

Electronic structure, magnetic properties, and mechanism of the insulator-metal transition in LaCoO3 taking into account strong electron correlations

NASA Astrophysics Data System (ADS)

Ovchinnikov, S. G.; Orlov, Yu. S.; Nekrasov, I. A.; Pchelkina, Z. V.

2011-01-01

The electronic structure of LaCoO3 at finite temperatures is calculated using the LDA+GTB method taking into account strong electron correlations and possible spin crossover upon an increase in temperature. Gap states revealed in the energy spectrum of LaCoO3 reduce the dielectric gap width upon heating; this allowed us to describe the insulator-metal transition observed in this compound at T = 500-600 K. The temperature dependence of the magnetic susceptibility with a peak at T ≈ 100 K is explained by the Curie contribution from thermally excited energy levels of the Co3+ ion. At high temperatures, the Pauli contribution from a band electron is added and the total magnetization of LaCoO3 is considered as the sum M tot = M loc + M band. The second term describes the band contribution appearing as a result of the insulator-metal transition and facilitating the emergence of a high-temperature anomaly in the magnetic susceptibility of LaCoO3.

Room-Temperature Processing of TiOx Electron Transporting Layer for Perovskite Solar Cells.

PubMed

Deng, Xiaoyu; Wilkes, George C; Chen, Alexander Z; Prasad, Narasimha S; Gupta, Mool C; Choi, Joshua J

2017-07-20

In order to realize high-throughput roll-to-roll manufacturing of flexible perovskite solar cells, low-temperature processing of all device components must be realized. However, the most commonly used electron transporting layer in high-performance perovskite solar cells is based on TiO 2 thin films processed at high temperature (>450 °C). Here, we demonstrate room temperature solution processing of the TiO x layer that performs as well as the high temperature TiO 2 layer in perovskite solar cells, as evidenced by a champion solar cell efficiency of 16.3%. Using optical spectroscopy, electrical measurements, and X-ray diffraction, we show that the room-temperature processed TiO x is amorphous with organic residues, and yet its optical and electrical properties are on par with the high-temperature TiO 2 . Flexible perovskite solar cells that employ a room-temperature TiO x layer with a power conversion efficiency of 14.3% are demonstrated.

Langmuir probe measurements in a time-fluctuating-highly ionized non-equilibrium cutting arc: analysis of the electron retarding part of the time-averaged current-voltage characteristic of the probe.

PubMed

Prevosto, L; Kelly, H; Mancinelli, B

2013-12-01

This work describes the application of Langmuir probe diagnostics to the measurement of the electron temperature in a time-fluctuating-highly ionized, non-equilibrium cutting arc. The electron retarding part of the time-averaged current-voltage characteristic of the probe was analysed, assuming that the standard exponential expression describing the electron current to the probe in collision-free plasmas can be applied under the investigated conditions. A procedure is described which allows the determination of the errors introduced in time-averaged probe data due to small-amplitude plasma fluctuations. It was found that the experimental points can be gathered into two well defined groups allowing defining two quite different averaged electron temperature values. In the low-current region the averaged characteristic was not significantly disturbed by the fluctuations and can reliably be used to obtain the actual value of the averaged electron temperature. In particular, an averaged electron temperature of 0.98 ± 0.07 eV (= 11400 ± 800 K) was found for the central core of the arc (30 A) at 3.5 mm downstream from the nozzle exit. This average included not only a time-average over the time fluctuations but also a spatial-average along the probe collecting length. The fitting of the high-current region of the characteristic using such electron temperature value together with the corrections given by the fluctuation analysis showed a relevant departure of local thermal equilibrium in the arc core.

Measurements of hot-electron temperature in laser-irradiated plasmas

DOE PAGES

Solodov, A. A.; Yaakobi, B.; Edgell, D. H.; ...

2016-10-26

In a recently published work 1–3 we reported on measuring the total energy of hot electrons produced by the interaction of a nanosecond laser with planar CH-coated molybdenum targets, using the Mo K α emission. The temperature of the hot electrons in that work was determined by the high-energy bremsstrahlung [hard x-ray (HXR)] spectrum measured by a three-channel fluorescence-photomultiplier detector (HXRD). In the present work, we replaced the HXRD with a nine-channel image-plate (IP)–based detector (HXIP). For the same conditions (irradiance of the order of 10 14 W/cm 2; 2-ns pulses) the measured temperatures are consistently lower than those measuredmore » by the HXRD (by a factor ~1.5 to 1.7). In addition, we supplemented this measurement with three experiments that measure the hot-electron temperature using K α line-intensity ratios from high-Z target layers, independent of the HXR emission. These experiments yielded temperatures that were consistent with those measured by the HXIP. We showed that the thermal x-ray radiation must be included in the derivation of total energy in hot electrons (E hot), and that this makes E hot only weakly dependent on hot-electron temperature. For a given x-ray emission in inertial confinement fusion compression experiments, this result would lead to a higher total energy in hot electrons, but the preheat of the compressed fuel may be lower because of the reduced hot-electron range.« less

Measurements of hot-electron temperature in laser-irradiated plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solodov, A. A.; Yaakobi, B.; Edgell, D. H.

In a recently published work 1–3 we reported on measuring the total energy of hot electrons produced by the interaction of a nanosecond laser with planar CH-coated molybdenum targets, using the Mo K α emission. The temperature of the hot electrons in that work was determined by the high-energy bremsstrahlung [hard x-ray (HXR)] spectrum measured by a three-channel fluorescence-photomultiplier detector (HXRD). In the present work, we replaced the HXRD with a nine-channel image-plate (IP)–based detector (HXIP). For the same conditions (irradiance of the order of 10 14 W/cm 2; 2-ns pulses) the measured temperatures are consistently lower than those measuredmore » by the HXRD (by a factor ~1.5 to 1.7). In addition, we supplemented this measurement with three experiments that measure the hot-electron temperature using K α line-intensity ratios from high-Z target layers, independent of the HXR emission. These experiments yielded temperatures that were consistent with those measured by the HXIP. We showed that the thermal x-ray radiation must be included in the derivation of total energy in hot electrons (E hot), and that this makes E hot only weakly dependent on hot-electron temperature. For a given x-ray emission in inertial confinement fusion compression experiments, this result would lead to a higher total energy in hot electrons, but the preheat of the compressed fuel may be lower because of the reduced hot-electron range.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Huizhen; Zhao, Dian; Cui, Yuangjing, E-mail: cuiyj@zju.edu.cn

Temperature measurements and thermal mapping using luminescent MOF operating in the high-temperature range are of great interest in the micro-electronic diagnosis. In this paper, we report a thermostable Eu/Tb-mixed MOF Eu{sub 0.37}Tb{sub 0.63}-BTC-a exhibiting strong luminescence at elevated temperature, which can serve as a ratiometric luminescent thermometer for high-temperature range. The high-temperature operating range (313–473 K), high relative sensitivity and accurate temperature resolution, make such a Eu/Tb-mixed MOF useful for micro-electronic diagnosis. - Graphical abstract: A thermostable Eu/Tb-mixed MOF Eu{sub 0.37}Tb{sub 0.63}-BTC-a was developed as a ratiometric luminescent thermometers in the high-temperature range of 313–473 K. - Highlights: • Amore » thermostable Eu/Tb-codoped MOF exhibiting strong luminescent at elevated temperature is reported. • The high-temperature operating range of Eu{sub 0.37}Tb{sub 0.63}-BTC-a is 313–473 K. • The mechanism of Eu{sub 0.37}Tb{sub 0.63}-BTC-a used as thermometers are also discussed.« less

[Influence of over expression of CsRCA on photosynthesis of cucumber seedlings under high temperature stress.

PubMed

Bi, Huan Gai; Dong, Xu Bing; Liu, Pei Pei; Li, Qing Ming; Ai, Xi Zhen

2016-07-01

In the present work, transgenic cucumber seedlings over expressing CsRCA and wild-type cucumber seedlings '08-1'at three-leaf stage exposed to high temperature (40 ℃, PFD 600 μmol· m -2 · s -1 ) were used to study the regulatory mechanism of photosynthesis by CsRCA. The results showed that the mRNA abundance of rbcL and rbcS as well as the activities of ribulose bisphosphate carboxylic enzyme (Rubisco) and Rubisco activase (RCA) were significantly higher in CsRCA over-expressing cucumber seedlings than in wild type (WT). Following 2-h exposure to high temperature, a notable decrease was observed in photosynthetic rate (P n ), photochemical perfor-mance index based on the absorption of light energy (PI ABS ), activities of Rubisco and RCA as well as the relative expression of rbcL, rbcS and CsRCA in both wild-type cucumber seedlings and transgenic cucumber seedlings. It was found that high temperature stress led to higher W k , a parameter of chlorophyll (Chl) a fluorescence OJIP curve. Furthermore, high temperature greatly reduced the efficiency of electron transfer along the electron transport chain beyond Q A (ψ 0 ) and the quantum yield for electron transport (φ E0 ), indicating that PSII oxygen complexes (OEC) and electron transport chain downstream Q A were inhibited by high temperature. However, the inhibition could be alleviated by over expressing CsRCA in cucumber seedlings. Taken together, our data suggested that over expressing CsRCA improves photosynthesis in cucumber seedlings under high temperature stress by enhancing activities of the Rubisco and RCA, and maintaining the number of active reaction centers.

GaN Based Electronics And Their Applications

NASA Astrophysics Data System (ADS)

Ren, Fan

2002-03-01

The Group III-nitrides were initially researched for their promise to fill the void for a blue solid state light emitter. Electronic devices from III-nitrides have been a more recent phenomenon. The thermal conductivity of GaN is three times that of GaAs. For high power or high temperature applications, good thermal conductivity is imperative for heat removal or sustained operation at elevated temperatures. The development of III-N and other wide bandgap technologies for high temperature applications will likely take place at the expense of competing technologies, such as silicon-on-insulator (SOI), at moderate temperatures. At higher temperatures (>300°C), novel devices and components will become possible. The automotive industry will likely be one of the largest markets for such high temperature electronics. One of the most noteworthy advantages for III-N materials over other wide bandgap semiconductors is the availability of AlGaN/GaN and InGaN/GaN heterostructures. A 2-dimensional electron gas (2DEG) has been shown to exist at the AlGaN/GaN interface, and heterostructure field effect transistors (HFETs) from these materials can exhibit 2DEG mobilities approaching 2000 cm2 / V?s at 300K. Power handling capabilities of 12 W/mm appear feasible, and extraordinary large signal performance has already been demonstrated, with a current state-of-the-art of >10W/mm at X-band. In this talk, high speed and high temperature AlGaN/GaN HEMTs as well as MOSHEMTs, high breakdown voltage GaN (>6KV) and AlGaN (9.7 KV) Schottky diodes, and their applications will be presented.

Electron mobility on the surface of liquid Helium: influence of surface level atoms and depopulation of lowest subbands

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grigoriev, P. D., E-mail: grigorev@itp.ac.ru; Dyugaev, A. M.; Lebedeva, E. V.

2008-02-15

The temperature dependence of electron mobility is examined. We calculate the contribution to the electron scattering rate from the surface level atoms (SLAs), proposed in [10]. This contribution is substantial at low temperatures T < 0.5, when the He vapor concentration is exponentially small. We also study the effect of depopulation of the lowest energy subband, which leads to an increase in the electron mobility at high temperature. The results explain certain long-standing discrepancies between the existing theory and experiment on electron mobility on the surface of liquid helium.

Role of temperature on static correlational properties in a spin-polarized electron gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arora, Priya; Moudgil, R. K., E-mail: rkmoudgil@kuk.ac.in; Kumar, Krishan

We have studied the effect of temperature on the static correlational properties of a spin-polarized three-dimensional electron gas (3DEG) over a wide coupling and temperature regime. This problem has been very recently studied by Brown et al. using the restricted path-integral Monte Carlo (RPIMC) technique in the warm-dense regime. To this endeavor, we have used the finite temperature version of the dynamical mean-field theory of Singwi et al, the so-called quantum STLS (qSTLS) approach. The static density structure factor and the static pair-correlation function are calculated, and compared with the RPIMC simulation data. We find an excellent agreement with themore » simulation at high temperature over a wide coupling range. However, the agreement is seen to somewhat deteriorate with decreasing temperature. The pair-correlation function is found to become small negative for small electron separation. This may be attributed to the inadequacy of the mean-field theory in dealing with the like spin electron correlations in the strong-coupling domain. A nice agreement with RPIMC data at high temperature seems to arise due to weakening of both the exchange and coulomb correlations with rising temperature.« less

The synergy of corrosion and fretting wear process on Inconel 690 in the high temperature high pressure water environment

NASA Astrophysics Data System (ADS)

Wang, Zihao; Xu, Jian; Li, Jie; Xin, Long; Lu, Yonghao; Shoji, Tetsuo; Takeda, Yoichi; Otsuka, Yuichi; Mutoh, Yoshiharu

2018-04-01

The synergistic effect of corrosion and fretting process of the steam generator (SG) tube was investigated by using a self-designed high temperature test rig in this paper. The experiments were performed at 100°C , 200°C and 288°C , respectively. The fretting corrosion damage was studied by optical microscopy (OM), scanning electron microscope (SEM), energy dispersive spectrometer (EDS), Raman spectroscopy and auger electron spectroscopy (AES). The results demonstrated that the corrosion process in high temperature high pressure (HTHP) water environment had a distinct interaction with the fretting process of Inconel 690. With the increment of temperature, the damage mechanism changed from a simple mechanical process to a mechanochemical process.

Unified first principles description from warm dense matter to ideal ionized gas plasma: electron-ion collisions induced friction.

PubMed

Dai, Jiayu; Hou, Yong; Yuan, Jianmin

2010-06-18

Electron-ion interactions are central to numerous phenomena in the warm dense matter (WDM) regime and at higher temperature. The electron-ion collisions induced friction at high temperature is introduced in the procedure of ab initio molecular dynamics using the Langevin equation based on density functional theory. In this framework, as a test for Fe and H up to 1000 eV, the equation of state and the transition of electronic structures of the materials with very wide density and temperature can be described, which covers a full range of WDM up to high energy density physics. A unified first principles description from condensed matter to ideal ionized gas plasma is constructed.

DEMONSTRATION BULLETIN: HIGH VOLTAGE ELECTRON BEAM TECHNOLOGY - HIGH VOLTAGE ENVIRONMENTAL APPLICATIONS, INC.

EPA Science Inventory

The high energy electron beam irradiation technology is a low temperature method for destroying complex mixtures of hazardous organic chemicals in solutions containing solids. The system consists of a computer-automated, portable electron beam accelerator and a delivery system. T...

SiGe Based Low Temperature Electronics for Lunar Surface Applications

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad M.; Kolawa, Elizabeth; Blalock, Benjamin; Cressler, John

2012-01-01

The temperature at the permanently shadowed regions of the moon's surface is approximately -240 C. Other areas of the lunar surface experience temperatures that vary between 120 C and -180 C during the day and night respectively. To protect against the large temperature variations of the moon surface, traditional electronics used in lunar robotics systems are placed inside a thermally controlled housing which is bulky, consumes power and adds complexity to the integration and test. SiGe Based electronics have the capability to operate over wide temperature range like that of the lunar surface. Deploying low temperature SiGe electronics in a lander platform can minimize the need for the central thermal protection system and enable the development of a new generation of landers and mobility platforms with highly efficient distributed architecture. For the past five years a team consisting of NASA, university and industry researchers has been examining the low temperature and wide temperature characteristic of SiGe based transistors for developing electronics for wide temperature needs of NASA environments such as the Moon, Titan, Mars and Europa. This presentation reports on the status of the development of wide temperature SiGe based electronics for the landers and lunar surface mobility systems.

Silicon Carbide Sensors and Electronics for Harsh Environment Applications

NASA Technical Reports Server (NTRS)

Evans, Laura J.

2007-01-01

Silicon carbide (SiC) semiconductor has been studied for electronic and sensing applications in extreme environment (high temperature, extreme vibration, harsh chemical media, and high radiation) that is beyond the capability of conventional semiconductors such as silicon. This is due to its near inert chemistry, superior thermomechanical and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

Thermoelectric effects in graphene at high bias current and under microwave irradiation.

PubMed

Skoblin, Grigory; Sun, Jie; Yurgens, August

2017-11-14

We use a split top gate to induce doping of opposite signs in different parts of a graphene field-effect transistor, thereby effectively forming a graphene thermocouple. The thermocouple is sensitive to the electronic temperature in graphene, which can be several hundred kelvin higher than the ambient one at sufficiently high bias current. Combined with the high thermoelectric power of graphene, this allows for i) simple measurements of the electronic temperature and ii) building thermoelectric radiation detectors. A simple prototype graphene thermoelectric detector shows a temperature-independent optical responsivity of around 400 V/W at 94 GHz at temperatures of 4-50 K.

Phenomenological view at the two-component physics of cuprates

NASA Astrophysics Data System (ADS)

Teitel'baum, G. B.

2017-08-01

In the search for mechanisms of high- T c superconductivity it is critical to know the electronic spectrum in the pseudogap phase from which superconductivity evolves. The lack of ARPES data for every cuprate family precludes an agreement as to its structure, doping and temperature dependence and the role of charge ordering. No approach has been developed yet to address the issue theoretically, and we limit ourselves by the phenomenological analysis of the experimental data. We argue that, in the Fermi-liquid-like regime ubiquitous in underdoped cuprates, the spectrum consists of holes on the Fermi arcs and an electronic pocket in contrast to the idea of the Fermi surface reconstruction via charge ordering. At high temperatures, the electrons are dragged by holes while at lower temperatures they get decoupled. The longstanding issue of the origin of the negative Hall coefficient in YBCO and Hg1201 at low temperature is resolved: the electronic contribution prevails, as its mobility becomes temperature independent, while the mobility of holes, scattered by the shortwavelength charge density waves, decreases.

Mid-Latitude Ionospheric Disturbances Due to Geomagnetic Storms at ISS Altitudes

NASA Technical Reports Server (NTRS)

Minow, Joseph I.; Willis, Emily M.; Neergaard Parker, Linda

2014-01-01

Spacecraft charging of the International Space Station (ISS) is dominated by interaction of the US high voltage solar arrays with the F2-region ionosphere plasma environment. ISS solar array charging is enhanced in a high electron density environment due to the increased thermal electron currents to the edges of the solar cells. High electron temperature environments suppress charging due to formation of barrier potentials on the charged solar cell cover glass that restrict the charging currents to the cell edge [Mandell et al., 2003]. Environments responsible for strong solar array charging are therefore characterized by high electron densities and low electron temperatures. In support of the ISS space environmental effects engineering community, we are working to understand a number of features of solar array charging and to determine how well future charging behavior can be predicted from in-situ plasma density and temperature measurements. One aspect of this work is a need to characterize the magnitude of electron density and temperature variations that occur at ISS orbital altitudes (approximately 400 km) over time scales of days, the latitudes over which significant variations occur, and the time periods over which the disturbances persist once they start. This presentation provides examples of mid-latitude electron density and temperature disturbances at altitudes relevant to ISS using data sets and tools developed for our ISS plasma environment study. "Mid-latitude" is defined as the extra-tropical region between approx. 30 degrees to approx. 60 degrees magnetic latitude sampled by ISS over its 51.6 degree inclination orbit. We focus on geomagnetic storm periods because storms are well known drivers for disturbances in the ionospheric plasma environment.

High Temperature Wireless Communication And Electronics For Harsh Environment Applications

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Neudeck, P. G.; Beheim, G. M.; Ponchak, G. E.; Chen, L.-Y

2007-01-01

In order for future aerospace propulsion systems to meet the increasing requirements for decreased maintenance, improved capability, and increased safety, the inclusion of intelligence into the propulsion system design and operation becomes necessary. These propulsion systems will have to incorporate technology that will monitor propulsion component conditions, analyze the incoming data, and modify operating parameters to optimize propulsion system operations. This implies the development of sensors, actuators, and electronics, with associated packaging, that will be able to operate under the harsh environments present in an engine. However, given the harsh environments inherent in propulsion systems, the development of engine-compatible electronics and sensors is not straightforward. The ability of a sensor system to operate in a given environment often depends as much on the technologies supporting the sensor element as the element itself. If the supporting technology cannot handle the application, then no matter how good the sensor is itself, the sensor system will fail. An example is high temperature environments where supporting technologies are often not capable of operation in engine conditions. Further, for every sensor going into an engine environment, i.e., for every new piece of hardware that improves the in-situ intelligence of the components, communication wires almost always must follow. The communication wires may be within or between parts, or from the engine to the controller. As more hardware is added, more wires, weight, complexity, and potential for unreliability is also introduced. Thus, wireless communication combined with in-situ processing of data would significantly improve the ability to include sensors into high temperature systems and thus lead toward more intelligent engine systems. NASA Glenn Research Center (GRC) is presently leading the development of electronics, communication systems, and sensors capable of prolonged stable operation in harsh 500C environments. This has included world record operation of SiC-based transistor technology (including packaging) that has demonstrated continuous electrical operation at 500C for over 2000 hours. Based on SiC electronics, development of high temperature wireless communication has been on-going. This work has concentrated on maturing the SiC electronic devices for communication purposes as well as the passive components such as resistors and capacitors needed to enable a high temperature wireless system. The objective is to eliminate wires associated with high temperature sensors which add weight to a vehicle and can be a cause of sensor unreliability. This paper discusses the development of SiC based electronics and wireless communications technology for harsh environment applications such as propulsion health management systems and in Venus missions. A brief overview of the future directions in sensor technology is given including maturing of near-room temperature "Lick and Stick" leak sensor technology for possible implementation in the Crew Launch Vehicle program. Then an overview of high temperature electronics and the development of high temperature communication systems is presented. The maturity of related technologies such as sensor and packaging will also be discussed. It is concluded that a significant component of efforts to improve the intelligence of harsh environment operating systems is the development and implementation of high temperature wireless technology

Novel AlInN/GaN integrated circuits operating up to 500 °C

NASA Astrophysics Data System (ADS)

Gaska, R.; Gaevski, M.; Jain, R.; Deng, J.; Islam, M.; Simin, G.; Shur, M.

2015-11-01

High electron concentration in 2DEG channel of AlInN/GaN devices is remarkably stable over a broad temperature range, enabling device operation above 500 °C. The developed IC technology is based on three key elements: (1) exceptional quality AlInN/GaN heterostructure with very high carrier concentration and mobility enables IC fast operation in a broad temperature range; (2) heterostructure field effect transistor approach t provides fully planar IC structure which is easy to scale and to combine with the other high temperature electronic components; (3) fabrication advancements including novel metallization scheme and high-K passivation/gate dielectrics enable high temperature operation. The feasibility of the developed technology was confirmed by fabrication and testing of the high temperature inverter and differential amplifier ICs using AlInN/GaN heterostructures. The developed ICs showed stable performance with unit-gain bandwidth above 1 MHz and internal response time 45 ns at temperatures as high as 500 °C.

Tracking the ultrafast XUV optical properties of x-ray free-electron-laser heated matter with high-order harmonics

NASA Astrophysics Data System (ADS)

Williams, Gareth O.; Künzel, S.; Daboussi, S.; Iwan, B.; Gonzalez, A. I.; Boutu, W.; Hilbert, V.; Zastrau, U.; Lee, H. J.; Nagler, B.; Granados, E.; Galtier, E.; Heimann, P.; Barbrel, B.; Dovillaire, G.; Lee, R. W.; Dunn, J.; Recoules, V.; Blancard, C.; Renaudin, P.; de la Varga, A. G.; Velarde, P.; Audebert, P.; Merdji, H.; Zeitoun, Ph.; Fajardo, M.

2018-02-01

We present measurements of photon absorption by free electrons as a solid is transformed to plasma. A femtosecond x-ray free-electron laser is used to heat a solid, which separates the electron and ion heating time scales. The changes in absorption are measured with an independent probe pulse created through high-order-harmonic generation. We find an increase in electron temperature to have a relatively small impact on absorption, contrary to several predictions, whereas ion heating increases absorption. We compare the data to current theoretical and numerical approaches and find that a smoother electronic structure yields a better fit to the data, suggestive of a temperature-dependent electronic structure in warm dense matter.

Thermometry of Silicon Nanoparticles

NASA Astrophysics Data System (ADS)

Mecklenburg, Matthew; Zutter, Brian; Regan, B. C.

2018-01-01

Current thermometry techniques lack the spatial resolution required to see the temperature gradients in typical, highly scaled modern transistors. As a step toward addressing this problem, we measure the temperature dependence of the volume plasmon energy in silicon nanoparticles from room temperature to 1250 °C , using a chip-style heating sample holder in a scanning transmission electron microscope (STEM) equipped with electron energy loss spectroscopy (EELS). The plasmon energy changes as expected for an electron gas subject to the thermal expansion of silicon. Reversing this reasoning, we find that measurements of the plasmon energy provide an independent measure of the nanoparticle temperature consistent with that of the heater chip's macroscopic, dual-function heater-and-thermometer to within the 5% accuracy of the thermometer's calibration. Thus, silicon has the potential to provide its own high-spatial-resolution thermometric readout signal via measurements of its volume plasmon energy. Furthermore, nanoparticles can, in general, serve as convenient nanothermometers for in situ electron-microscopy experiments.

Development of Cryogenic Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor Amplifier

NASA Astrophysics Data System (ADS)

Hirata, T.; Okazaki, T.; Obara, K.; Yano, H.; Ishikawa, O.

2017-06-01

This paper reports the technical details of the development of a low-temperature amplifier for nuclear magnetic resonance measurements of superfluid {}^3He in very confined geometries. The amplifier consists of commercially available enhancement-mode pseudomorphic high-electron-mobility transistor devices and temperature-insensitive passive components with an operating frequency range of 0.2-6 MHz.

Electronically conductive ceramics for high temperature oxidizing environments

DOEpatents

Kucera, Gene H.; Smith, James L.; Sim, James W.

1986-01-01

A high temperature, ceramic composition having electronic conductivity as measured by resistivity below about 500 ohm-cm, chemical stability particularly with respect to cathode conditions in a molten carbonate fuel cell, and composed of an alkali metal, transition metal oxide containing a dopant metal in the crystalline structure to replace a portion of the alkali metal or transition metal.

Common electronic origin of superconductivity in (Li,Fe)OHFeSe bulk superconductor and single-layer FeSe/SrTiO3 films.

PubMed

Zhao, Lin; Liang, Aiji; Yuan, Dongna; Hu, Yong; Liu, Defa; Huang, Jianwei; He, Shaolong; Shen, Bing; Xu, Yu; Liu, Xu; Yu, Li; Liu, Guodong; Zhou, Huaxue; Huang, Yulong; Dong, Xiaoli; Zhou, Fang; Liu, Kai; Lu, Zhongyi; Zhao, Zhongxian; Chen, Chuangtian; Xu, Zuyan; Zhou, X J

2016-02-08

The mechanism of high-temperature superconductivity in the iron-based superconductors remains an outstanding issue in condensed matter physics. The electronic structure plays an essential role in dictating superconductivity. Recent revelation of distinct electronic structure and high-temperature superconductivity in the single-layer FeSe/SrTiO3 films provides key information on the role of Fermi surface topology and interface in inducing or enhancing superconductivity. Here we report high-resolution angle-resolved photoemission measurements on the electronic structure and superconducting gap of an FeSe-based superconductor, (Li0.84Fe0.16)OHFe0.98Se, with a Tc at 41 K. We find that this single-phase bulk superconductor shows remarkably similar electronic behaviours to that of the superconducting single-layer FeSe/SrTiO3 films in terms of Fermi surface topology, band structure and the gap symmetry. These observations provide new insights in understanding high-temperature superconductivity in the single-layer FeSe/SrTiO3 films and the mechanism of superconductivity in the bulk iron-based superconductors.

Comparison of the ultrafast hot electron dynamics of titanium nitride and gold for plasmonic applications

NASA Astrophysics Data System (ADS)

Doiron, Brock; Li, Yi; Mihai, Andrei P.; Cohen, Lesley F.; Petrov, Peter K.; Alford, Neil M.; Oulton, Rupert F.; Maier, Stefan A.

2017-08-01

With similar optical properties to gold and high thermal stability, titanium nitride continues to prove itself as a promising plasmonic material for high-temperature applications in the visible and near-infrared. In this work, we use transient pump probe differential reflection measurements to compare the electron energy decay channels in titanium nitride and gold thin films. Using an extended two temperature model to incorporate the photoexcited electrons, it is possible to separate the electron-electron and electron-phonon scattering contributions immediately following the arrival of the pump pulse. This model allows for incredibly accurate determination of the internal electronic properties using only optical measurements. As the electronic properties are key in hot electron applications, we show that titanium nitide has substantially longer electron thermalization and electron-phonon scattering times. With this, we were also able to resolve electron thermal conduction in the film using purely optical measurements.

Silicon Carbide Solar Cells Investigated

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Raffaelle, Ryne P.

2001-01-01

The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

Power Electronics Thermal Management Research: Annual Progress Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreno, Gilberto

The objective for this project is to develop thermal management strategies to enable efficient and high-temperature wide-bandgap (WBG)-based power electronic systems (e.g., emerging inverter and DC-DC converter). Reliable WBG devices are capable of operating at elevated temperatures (≥ 175 °Celsius). However, packaging WBG devices within an automotive inverter and operating them at higher junction temperatures will expose other system components (e.g., capacitors and electrical boards) to temperatures that may exceed their safe operating limits. This creates challenges for thermal management and reliability. In this project, system-level thermal analyses are conducted to determine the effect of elevated device temperatures on invertermore » components. Thermal modeling work is then conducted to evaluate various thermal management strategies that will enable the use of highly efficient WBG devices with automotive power electronic systems.« less

Exchange-correlation approximations for reduced-density-matrix-functional theory at finite temperature: Capturing magnetic phase transitions in the homogeneous electron gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baldsiefen, Tim; Cangi, Attila; Eich, F. G.

Here, we derive an intrinsically temperature-dependent approximation to the correlation grand potential for many-electron systems in thermodynamical equilibrium in the context of finite-temperature reduced-density-matrix-functional theory (FT-RDMFT). We demonstrate its accuracy by calculating the magnetic phase diagram of the homogeneous electron gas. We compare it to known limits from highly accurate quantum Monte Carlo calculations as well as to phase diagrams obtained within existing exchange-correlation approximations from density functional theory and zero-temperature RDMFT.

Exchange-correlation approximations for reduced-density-matrix-functional theory at finite temperature: Capturing magnetic phase transitions in the homogeneous electron gas

DOE PAGES

Baldsiefen, Tim; Cangi, Attila; Eich, F. G.; ...

2017-12-18

Here, we derive an intrinsically temperature-dependent approximation to the correlation grand potential for many-electron systems in thermodynamical equilibrium in the context of finite-temperature reduced-density-matrix-functional theory (FT-RDMFT). We demonstrate its accuracy by calculating the magnetic phase diagram of the homogeneous electron gas. We compare it to known limits from highly accurate quantum Monte Carlo calculations as well as to phase diagrams obtained within existing exchange-correlation approximations from density functional theory and zero-temperature RDMFT.

On the Crossover from Classical to Fermi Liquid Behavior in Dense Plasmas

NASA Astrophysics Data System (ADS)

Daligault, Jerome

2017-10-01

We explore the crossover from classical plasma to quantum Fermi liquid behavior of electrons in dense plasmas. To this end, we analyze the evolution with density and temperature of the momentum lifetime of a test electron introduced in a dense electron gas. This allows us 1) to determine the boundaries of the crossover region in the temperature-density plane and to shed light on the evolution of scattering properties across it, 2) to quantify the role of the fermionic nature of electrons on electronic collisions across the crossover region, and 3) to explain how the concept of Coulomb logarithm emerges at high enough temperature but disappears at low enough temperature. Work supported by LDRD Grant No. 20170490ER.

High temperature furnace

DOEpatents

Borkowski, Casimer J.

1976-08-03

A high temperature furnace for use above 2000.degree.C is provided that features fast initial heating and low power consumption at the operating temperature. The cathode is initially heated by joule heating followed by electron emission heating at the operating temperature. The cathode is designed for routine large temperature excursions without being subjected to high thermal stresses. A further characteristic of the device is the elimination of any ceramic components from the high temperature zone of the furnace.

Porous electronic current collector bodies for electrochemical cell configurations

DOEpatents

Pollack, William; Reichner, Philip

1989-01-01

A high-temperature, solid electrolyte electrochemical cell configuration is made comprising a plurality of elongated electrochemical cells 1, having inner electrodes 3, outer electrodes 6 and solid electrolyte 4 therebetween, the cells being electronically connected in series and parallel by flexible, porous, fibrous strips 7, where the strips contain flexible, electronically conductive fibers bonded together and coated with a refractory oxide, and where the oxide coating is effective to prevent additional bonding of fibers during electrochemical cell operation at high temperatures.

Beta-manganese dioxide nanorods for sufficient high-temperature electromagnetic interference shielding in X-band

NASA Astrophysics Data System (ADS)

Song, Wei-Li; Cao, Mao-Sheng; Hou, Zhi-Ling; Lu, Ming-Ming; Wang, Chan-Yuan; Yuan, Jie; Fan, Li-Zhen

2014-09-01

As the development of electronic and communication technology, electromagnetic interference (EMI) shielding and attenuation is an effective strategy to ensure the operation of the electronic devices. Among the materials for high-performance shielding in aerospace industry and related high-temperature working environment, the thermally stable metal oxide semiconductors with narrow band gap are promising candidates. In this work, beta-manganese dioxide ( β-MnO2) nanorods were synthesized by a hydrothermal method. The bulk materials of the β-MnO2 were fabricated to evaluate the EMI shielding performance in the temperature range of 20-500 °C between 8.2 and 12.4 GHz (X-band). To understand the mechanisms of high-temperature EMI shielding, the contribution of reflection and absorption to EMI shielding was discussed based on temperature-dependent electrical properties and complex permittivity. Highly sufficient shielding effectiveness greater than 20 dB was observed over all the investigated range, suggesting β-MnO2 nanorods as promising candidates for high-temperature EMI shielding. The results have also established a platform to develop high-temperature EMI shielding materials based on nanoscale semiconductors.

A Two-Fluid, MHD Coronal Model

NASA Technical Reports Server (NTRS)

Suess, S. T.; Wang, A.-H.; Wu, S. T.; Poletto, G.; McComas, D. J.

1999-01-01

We describe first results from a numerical two-fluid MHD model of the global structure of the solar Corona. The model is two-fluid in the sense that it accounts for the collisional energy exchange between protons and electrons. As in our single-fluid model, volumetric heat and Momentum sources are required to produce high speed wind from Corona] holes, low speed wind above streamers, and mass fluxes similar to the empirical solar wind. By specifying different proton and electron heating functions we obtain a high proton temperature in the coronal hole and a relatively low proton temperature above the streamer (in comparison with the electron temperature). This is consistent with inferences from SOHO/UltraViolet Coronagraph Spectrometer instrument (UVCS), and with the Ulysses/Solar Wind Observations Over the Poles of the Sun instrument (SWOOPS) proton and electron temperature measurements which we show from the fast latitude scan. The density in the coronal hole between 2 and 5 solar radii (2 and 5 R(sub S)) is similar to the density reported from SPARTAN 201.-01 measurements by Fisher and Guhathakurta [19941. The proton mass flux scaled to 1 AU is 2.4 x 10(exp 8)/sq cm s, which is consistent with Ulysses observations. Inside the closed field region, the density is sufficiently high so that the simulation gives equal proton and electron temperatures due to the high collision rate. In open field regions (in the coronal hole and above the streamer) the proton and electron temperatures differ by varying amounts. In the streamer the temperature and density are similar to those reported empirically by Li et al. [1998], and the plasma beta is larger than unity everywhere above approx. 1.5 R(sub S), as it is in all other MHD coronal streamer models [e.g., Steinolfson et al., 1982; also G. A. Gary and D. Alexander, Constructing the coronal magnetic field, submitted to Solar Physics, 1998].

Composite electrode/electrolyte structure

DOEpatents

Visco, Steven J.; Jacobson, Craig P.; DeJonghe, Lutgard C.

2004-01-27

Provided is an electrode fabricated from highly electronically conductive materials such as metals, metal alloys, or electronically conductive ceramics. The electronic conductivity of the electrode substrate is maximized. Onto this electrode in the green state, a green ionic (e.g., electrolyte) film is deposited and the assembly is co-fired at a temperature suitable to fully densify the film while the substrate retains porosity. Subsequently, a catalytic material is added to the electrode structure by infiltration of a metal salt and subsequent low temperature firing. The invention allows for an electrode with high electronic conductivity and sufficient catalytic activity to achieve high power density in ionic (electrochemical) devices such as fuel cells and electrolytic gas separation systems.

Evolution of two-dimensional plasma parameters in the plane of the wafer during the E- to H- and H- to E-mode transition in an inductively coupled plasma

NASA Astrophysics Data System (ADS)

Park, Il-Seo; Kim, Kyung-Hyun; Kim, Tae-Woo; Kim, Kwan-Youg; Moon, Ho-Jun; Chung, Chin-Wook

2018-05-01

The evolution of plasma parameters during the transition from E- to H- and from H- to E-mode is measured at the wafer level two-dimensionally at low and high pressures. The plasma parameters, such as electron density and electron temperature, are obtained through a floating harmonic sideband method. During the E- to H-mode transition, while the electron kinetics remains in the non-local regime at low pressure, the electron kinetics is changed from the non-local to the local regime at high pressure. The two-dimensional profiles of the electron density at two different pressures have similar convex shape despite different electron kinetics. However, in the case of the electron temperature, at high pressure, the profiles of the electron temperature are changed from flat to convex shape. These results can be understood by the diffusion of the plasma to the wafer-level probe. Moreover, between the transition of E to H and reverse H to E, hysteresis is observed even at the wafer level. The hysteresis is clearly shown at high pressure compared to low pressure. This can be explained by a variation of collisional energy loss including effects of electron energy distribution function (bi-Maxwellian, Maxwellian, Druyvesteyn distribution) on the rate constant and multistep ionization of excited state atoms. During the E- to H-mode transition, Maxwellization is caused by increased electron‑electron collisions, which reduces the collisional energy loss at high pressure (Druyvesteyn distribution) and increases it at low pressure (bi-Maxwellian distribution). Thus, the hysteresis is intensified at high pressure because the reduced collisional energy loss leads to higher ionization efficiency.

Temperature-Induced Large Broadening and Blue Shift in the Electronic Band Structure and Optical Absorption of Methylammonium Lead Iodide Perovskite.

PubMed

Yang, Jia-Yue; Hu, Ming

2017-08-17

The power conversion efficiency of hybrid halide perovskite solar cells is profoundly influenced by the operating temperature. Here we investigate the temperature influence on the electronic band structure and optical absorption of cubic CH 3 NH 3 PbI 3 from first-principles by accounting for both the electron-phonon interaction and thermal expansion. Within the framework of density functional perturbation theory, the electron-phonon coupling induces slightly enlarged band gap and strongly broadened electronic relaxation time as temperature increases. The large broadening effect is mainly due to the presence of cation organic atoms. Consequently, the temperature-dependent absorption peak exhibits blue-shift position, decreased amplitude, and broadened width. This work uncovers the atomistic origin of temperature influence on the optical absorption of cubic CH 3 NH 3 PbI 3 and can provide guidance to design high-performance hybrid halide perovskite solar cells at different operating temperatures.

Suppression of electron temperature gradient turbulence via negative magnetic shear in NSTX.

PubMed

Yuh, H Y; Kaye, S M; Levinton, F M; Mazzucato, E; Mikkelsen, D R; Smith, D R; Bell, R E; Hosea, J C; LeBlanc, B P; Peterson, J L; Park, H K; Lee, W

2011-02-04

Negative magnetic shear is found to suppress electron turbulence and improve electron thermal transport for plasmas in the National Spherical Torus Experiment (NSTX). Sufficiently negative magnetic shear results in a transition out of a stiff profile regime. Density fluctuation measurements from high-k microwave scattering are verified to be the electron temperature gradient (ETG) mode by matching measured rest frequency and linear growth rate to gyrokinetic calculations. Fluctuation suppression under negligible E×B shear conditions confirm that negative magnetic shear alone is sufficient for ETG suppression. Measured electron temperature gradients can significantly exceed ETG critical gradients with ETG mode activity reduced to intermittent bursts, while electron thermal diffusivity improves to below 0.1 electron gyro-Bohms.

A search for relativistic electron induced stratospheric ozone depletion

NASA Technical Reports Server (NTRS)

Aikin, Arthur C.

1994-01-01

Possible ozone changes at 1 mb associated with the time variation and precipitation of relativistic electrons are investigated by examining the NIMBUS 7 SBUV ozone data set and corresponding temperatures derived from NMC data. No ozone depletion was observed in high-latitude summer when temperature fluctuations are small. In winter more variation in ozone occurs, but large temperature changes make it difficult to identify specific ozone decreases as being the result of relativistic electron precipitation.

Nanoelectronic primary thermometry below 4 mK

PubMed Central

Bradley, D. I.; George, R. E.; Gunnarsson, D.; Haley, R. P.; Heikkinen, H.; Pashkin, Yu. A.; Penttilä, J.; Prance, J. R.; Prunnila, M.; Roschier, L.; Sarsby, M.

2016-01-01

Cooling nanoelectronic structures to millikelvin temperatures presents extreme challenges in maintaining thermal contact between the electrons in the device and an external cold bath. It is typically found that when nanoscale devices are cooled to ∼10 mK the electrons are significantly overheated. Here we report the cooling of electrons in nanoelectronic Coulomb blockade thermometers below 4 mK. The low operating temperature is attributed to an optimized design that incorporates cooling fins with a high electron–phonon coupling and on-chip electronic filters, combined with low-noise electronic measurements. By immersing a Coulomb blockade thermometer in the 3He/4He refrigerant of a dilution refrigerator, we measure a lowest electron temperature of 3.7 mK and a trend to a saturated electron temperature approaching 3 mK. This work demonstrates how nanoelectronic samples can be cooled further into the low-millikelvin range. PMID:26816217

Efficient planar Sb2S3 solar cells using a low-temperature solution-processed tin oxide electron conductor.

PubMed

Lei, Hongwei; Yang, Guang; Guo, Yaxiong; Xiong, Liangbin; Qin, Pingli; Dai, Xin; Zheng, Xiaolu; Ke, Weijun; Tao, Hong; Chen, Zhao; Li, Borui; Fang, Guojia

2016-06-28

Efficient planar antimony sulfide (Sb2S3) heterojunction solar cells have been made using chemical bath deposited (CBD) Sb2S3 as the absorber, low-temperature solution-processed tin oxide (SnO2) as the electron conductor and poly (3-hexylthiophene) (P3HT) as the hole conductor. A solar conversion efficiency of 2.8% was obtained at 1 sun illumination using a planar device consisting of F-doped SnO2 substrate/SnO2/CBD-Sb2S3/P3HT/Au, whereas the solar cells based on a titanium dioxide (TiO2) electron conductor exhibited a power conversion efficiency of 1.9%. Compared with conventional Sb2S3 sensitized solar cells, the high-temperature processed mesoscopic TiO2 scaffold is no longer needed. More importantly, a low-temperature solution-processed SnO2 layer was introduced for electron transportation to substitute the high-temperature sintered dense blocking TiO2 layer. Our planar solar cells not only have simple geometry with fewer steps to fabricate but also show enhanced performance. The higher efficiency of planar Sb2S3 solar cell devices based on a SnO2 electron conductor is attributed to their high transparency, uniform surface, efficient electron transport properties of SnO2, suitable energy band alignment, and reduced recombination at the interface of SnO2/Sb2S3.

Theoretical study of the effect of ionospheric return currents on the electron temperature

NASA Technical Reports Server (NTRS)

Schunk, R. W.; Sojka, J. J.; Bowline, M. D.

1987-01-01

A time-dependent, three-dimensional model of the high-altitude ionosphere is presently used to study the effects of field-aligned ionospheric return currents on auroral electron temperatures for different seasonal and solar cycle conditions, as well as for different upper boundary heat fluxes. The average, large scale, return current densities, which are a few microamps/sq m, are too small to affect auroral electron temperatures. The thermoelectric effect exhibits a pronounced solar cycle and seasonal dependence, and its heat transport corresponds to an upward flow of electron energy which can be either a source or sink of electron energy depending on altitude and geophysical conditions.

Ab initio structure determination of nanocrystals of organic pharmaceutical compounds by electron diffraction at room temperature using a Timepix quantum area direct electron detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Genderen, E. van; Clabbers, M. T. B.; Center for Cellular Imaging and NanoAnalytics

A specialized quantum area detector for electron diffraction studies makes it possible to solve the structure of small organic compound nanocrystals in non-cryo conditions by direct methods. Until recently, structure determination by transmission electron microscopy of beam-sensitive three-dimensional nanocrystals required electron diffraction tomography data collection at liquid-nitrogen temperature, in order to reduce radiation damage. Here it is shown that the novel Timepix detector combines a high dynamic range with a very high signal-to-noise ratio and single-electron sensitivity, enabling ab initio phasing of beam-sensitive organic compounds. Low-dose electron diffraction data (∼0.013 e{sup −} Å{sup −2} s{sup −1}) were collected at roommore » temperature with the rotation method. It was ascertained that the data were of sufficient quality for structure solution using direct methods using software developed for X-ray crystallography (XDS, SHELX) and for electron crystallography (ADT3D/PETS, SIR2014)« less

Electronically conductive ceramics for high temperature oxidizing environments

DOEpatents

Kucera, G.H.; Smith, J.L.; Sim, J.W.

1983-11-10

This invention pertains to a high temperature, ceramic composition having electronic conductivity as measured by resistivity below about 500 ohm-cm, chemical stability particularly with respect to cathode conditions in a molten carbonate fuel cell, and composed of an alkali metal, transition metal oxide containing a dopant metal in the crystalline structure to replace a portion of the alkali metal or transition metal.

Electron density profile measurements at a self-focusing ion beam with high current density and low energy extracted through concave electrodes.

PubMed

Fujiwara, Y; Hirano, Y; Kiyama, S; Nakamiya, A; Koguchi, H; Sakakita, H

2014-02-01

The self-focusing phenomenon has been observed in a high current density and low energy ion beam. In order to study the mechanism of this phenomenon, a special designed double probe to measure the electron density and temperature is installed into the chamber where the high current density ion beam is injected. Electron density profile is successfully measured without the influence of the ion beam components. Estimated electron temperature and density are ∼0.9 eV and ∼8 × 10(8) cm(-3) at the center of ion beam cross section, respectively. It was found that a large amount of electrons are spontaneously accumulated in the ion beam line in the case of self-forcing state.

Assessing the High Temperature, High Pressure Subsurface for Anaerobic Methane Oxidation

NASA Astrophysics Data System (ADS)

Harris, R. L.; Bartlett, D.; Byrnes, A. W.; Walsh, K. M.; Lau, C. Y. M.; Onstott, T. C.

2017-12-01

The anaerobic oxidation of methane (AOM) is an important sink in the global methane (CH4) budget. ANMEs are known to oxidize CH4 either independently or in consortia with bacteria, coupling the reduction of electron acceptors such as, SO42-, NO2-, NO3-, Mn4+, or Fe3+. To further constrain the contribution of AOM to the global CH4 budget, it is important to assess unexplored environments where AOM is thermodynamically possible such as the high pressure, high temperature deep biosphere. Provided plausible electron acceptor availability, increased temperature and pCH4 yield favorable Gibbs free energies for AOM reactions and the production of ATP (Fig. 1). To date, only sulfate-dependent AOM metabolism has been documented under high temperature conditions (50-72˚C), and AOM has not been assessed above 10.1 MPa. Given that ANMEs share close phylogenetic and metabolic heritage with methanogens and that the most heat-tolerant microorganism known is a barophilic methanogen, there possibly exist thermophilic ANMEs. Here we describe preliminary results from high pressure, high temperature stable isotope tracer incubation experiments on deep biosphere samples. Deep sub-seafloor sediments collected by IODP 370 from the Nankai Trough (257 - 865 m below seafloor) and deep fracture fluid from South Africa (1339 m below land surface) were incubated anaerobically in hydrostatic pressure vessels at 40 MPa in simulated in situ temperatures (40˚ - 80˚C). Sediments and fracture fluid were incubated in sulfate-free artificial seawater, a 2:98 13CH4:N2 headspace, and treated with one of the potential electron acceptors listed above in addition to kill and endogenous activity (i.e. no added electron acceptor) controls. Stable isotope analysis of dissolved inorganic carbon (DIC) suggests that AOM occurred within 60 days of incubation for all investigated electron acceptors and temperatures except 50˚C. Sulfate-dependent AOM rates are consistent with those previously reported in the literature, while the highest rate of AOM was measured in Nankai Trough sediments from 616 m incubated at 70˚C with 10 mM NO2- (0.44 ± .01 µmol 13CO2 day-1 g-1 dry weight sediment). Further analysis is required to investigate the identities and functional adaptations of CH4-cycling organisms active under high pressure and high temperature.

Reliable Breakdown Obtained in Silicon Carbide Rectifiers

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1997-01-01

The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Ion acceleration and non-Maxwellian electron distributions in a low collisionality, high power helicon plasma source

NASA Astrophysics Data System (ADS)

Li, Yan; Sung, Yung-Ta; Scharer, John

2015-11-01

Ion acceleration through plasma double layer and non-Maxwellian two temperature electron distributions have been observed in Madison Helicon Experiment (MadHeX) operated in high RF power (>1000 W) and low Ar pressure (0.17 mtorr) inductive mode. By applying Optical Emission Spectroscopy (OES) cross-checked with an RF-compensated Langmuir probe (at 13.56 MHz and its second and third harmonics), the fast (>80 eV), untrapped electrons downstream of the double layer have a higher temperature of 13 eV than the trapped bulk electrons upstream with a temperature of 4 eV. The reduction of plasma potential and density observed in the double layer region require an upstream temperature ten times the measured 4 eV if occurring via Boltzmann ambipolar expansion. The hot tail electrons of the non-Maxwellian electron distribution affect the formation and the potential drop of the double layer region. The mechanism behind this has been explored via several non-invasive plasma diagnostics tools. The OES measured electron temperatures and densities are also cross-checked with Atomic Data and Analysis Structure (ADAS) and a millimeter wave interferometer respectively. The IEDF is measured by a four-grid RPA and also cross-checked with argon 668 nm Laser Induced Fluorescence (LIF). An emissive probe has been used to measure the plasma potential.

Measurement of brightness temperature of two-dimensional electron gas in channel of a high electron mobility transistor at ultralow dissipation power

NASA Astrophysics Data System (ADS)

Korolev, A. M.; Shulga, V. M.; Turutanov, O. G.; Shnyrkov, V. I.

2016-07-01

A technically simple and physically clear method is suggested for direct measurement of the brightness temperature of two-dimensional electron gas (2DEG) in the channel of a high electron mobility transistor (HEMT). The usage of the method was demonstrated with the pseudomorphic HEMT as a specimen. The optimal HEMT dc regime, from the point of view of the "back action" problem, was found to belong to the unsaturated area of the static characteristics possibly corresponding to the ballistic electron transport mode. The proposed method is believed to be a convenient tool to explore the ballistic transport, electron diffusion, 2DEG properties and other electrophysical processes in heterostructures.

Tracking the ultrafast XUV optical properties of x-ray free-electron-laser heated matter with high-order harmonics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Williams, Gareth O.; Künzel, S.; Daboussi, S.

We present measurements of photon absorption by free electrons as a solid is transformed to plasma. A femtosecond x-ray free-electron laser is used to heat a solid, which separates the electron and ion heating time scales. The changes in absorption are measured with an independent probe pulse created through high-order-harmonic generation. We find an increase in electron temperature to have a relatively small impact on absorption, contrary to several predictions, whereas ion heating increases absorption. Here, we compare the data to current theoretical and numerical approaches and find that a smoother electronic structure yields a better fit to the data,more » suggestive of a temperature-dependent electronic structure in warm dense matter.« less

Tracking the ultrafast XUV optical properties of x-ray free-electron-laser heated matter with high-order harmonics

DOE PAGES

Williams, Gareth O.; Künzel, S.; Daboussi, S.; ...

2018-02-14

We present measurements of photon absorption by free electrons as a solid is transformed to plasma. A femtosecond x-ray free-electron laser is used to heat a solid, which separates the electron and ion heating time scales. The changes in absorption are measured with an independent probe pulse created through high-order-harmonic generation. We find an increase in electron temperature to have a relatively small impact on absorption, contrary to several predictions, whereas ion heating increases absorption. Here, we compare the data to current theoretical and numerical approaches and find that a smoother electronic structure yields a better fit to the data,more » suggestive of a temperature-dependent electronic structure in warm dense matter.« less

Thomson scattering diagnostics of thermal plasmas: Laser heating of electrons and the existence of local thermodynamic equilibrium.

PubMed

Murphy, A B

2004-01-01

A number of assessments of electron temperatures in atmospheric-pressure arc plasmas using Thomson scattering of laser light have recently been published. However, in this method, the electron temperature is perturbed due to strong heating of the electrons by the incident laser beam. This heating was taken into account by measuring the electron temperature as a function of the laser pulse energy, and linearly extrapolating the results to zero pulse energy to obtain an unperturbed electron temperature. In the present paper, calculations show that the laser heating process has a highly nonlinear dependence on laser power, and that the usual linear extrapolation leads to an overestimate of the electron temperature, typically by 5000 K. The nonlinearity occurs due to the strong dependence on electron temperature of the absorption of laser energy and of the collisional and radiative cooling of the heated electrons. There are further problems in deriving accurate electron temperatures from laser scattering due to necessary averages that have to be made over the duration of the laser pulse and over the finite volume from which laser light is scattered. These problems are particularly acute in measurements in which the laser beam is defocused in order to minimize laser heating; this can lead to the derivation of electron temperatures that are significantly greater than those existing anywhere in the scattering volume. It was concluded from the earlier Thomson scattering measurements that there were significant deviations from equilibrium between the electron and heavy-particle temperatures at the center of arc plasmas of industrial interest. The present calculations indicate that such deviations are only of the order of 1000 K in 20 000 K, so that the usual approximation that arc plasmas are approximately in local thermodynamic equilibrium still applies.

Cryogenic Quenching Process for Electronic Part Screening

NASA Technical Reports Server (NTRS)

Sheldon, Douglas J.; Cressler, John

2011-01-01

The use of electronic parts at cryogenic temperatures (less than 100 C) for extreme environments is not well controlled or developed from a product quality and reliability point of view. This is in contrast to the very rigorous and well-documented procedures to qualify electronic parts for mission use in the 55 to 125 C temperature range. A similarly rigorous methodology for screening and evaluating electronic parts needs to be developed so that mission planners can expect the same level of high reliability performance for parts operated at cryogenic temperatures. A formal methodology for screening and qualifying electronic parts at cryogenic temperatures has been proposed. The methodology focuses on the base physics of failure of the devices at cryogenic temperatures. All electronic part reliability is based on the bathtub curve, high amounts of initial failures (infant mortals), a long period of normal use (random failures), and then an increasing number of failures (end of life). Unique to this is the development of custom screening procedures to eliminate early failures at cold temperatures. The ability to screen out defects will specifically impact reliability at cold temperatures. Cryogenic reliability is limited by electron trap creation in the oxide and defect sites at conductor interfaces. Non-uniform conduction processes due to process marginalities will be magnified at cryogenic temperatures. Carrier mobilities change by orders of magnitude at cryogenic temperatures, significantly enhancing the effects of electric field. Marginal contacts, impurities in oxides, and defects in conductor/conductor interfaces can all be magnified at low temperatures. The novelty is the use of an ultra-low temperature, short-duration quenching process for defect screening. The quenching process is designed to identify those defects that will precisely (and negatively) affect long-term, cryogenic part operation. This quenching process occurs at a temperature that is at least 25 C colder than the coldest expected operating temperature. This quenching process is the opposite of the standard burn-in procedure. Normal burn-in raises the temperature (and voltage) to activate quickly any possible manufacturing defects remaining in the device that were not already rejected at a functional test step. The proposed inverse burn-in or quenching process is custom-tailored to the electronic device being used. The doping profiles, materials, minimum dimensions, interfaces, and thermal expansion coefficients are all taken into account in determining the ramp rate, dwell time, and temperature.

InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lye, Khe Shin; Kobayashi, Atsushi; Ueno, Kohei

Indium nitride (InN) is potentially suitable for the fabrication of high performance thin-film transistors (TFTs) because of its high electron mobility and peak electron velocity. However, InN is usually grown using a high temperature growth process, which is incompatible with large-area and lightweight TFT substrates. In this study, we report on the room temperature growth of InN films on flexible polyimide sheets using pulsed sputtering deposition. In addition, we report on the fabrication of InN-based TFTs on flexible polyimide sheets and the operation of these devices.

Effects of Temperature and Pressure of Hot Isostatic Pressing on the Grain Structure of Powder Metallurgy Superalloy

PubMed Central

Tan, Liming; He, Guoai; Liu, Feng; Li, Yunping; Jiang, Liang

2018-01-01

The microstructure with homogeneously distributed grains and less prior particle boundary (PPB) precipitates is always desired for powder metallurgy superalloys after hot isostatic pressing (HIPping). In this work, we studied the effects of HIPping parameters, temperature and pressure on the grain structure in PM superalloy FGH96, by means of scanning electron microscope (SEM), electron backscatter diffraction (EBSD), transmission electron microscope (TEM) and Time-of-flight secondary ion spectrometry (ToF-SIMS). It was found that temperature and pressure played different roles in controlling PPB precipitation and grain structure during HIPping, the tendency of grain coarsening under high temperature could be inhibited by increasing HIPping pressure which facilitates the recrystallization. In general, relatively high temperature and pressure of HIPping were preferred to obtain an as-HIPped superalloy FGH96 with diminished PPB precipitation and homogeneously refined grains. PMID:29495312

Effects of Temperature and Pressure of Hot Isostatic Pressing on the Grain Structure of Powder Metallurgy Superalloy.

PubMed

Tan, Liming; He, Guoai; Liu, Feng; Li, Yunping; Jiang, Liang

2018-02-24

The microstructure with homogeneously distributed grains and less prior particle boundary (PPB) precipitates is always desired for powder metallurgy superalloys after hot isostatic pressing (HIPping). In this work, we studied the effects of HIPping parameters, temperature and pressure on the grain structure in PM superalloy FGH96, by means of scanning electron microscope (SEM), electron backscatter diffraction (EBSD), transmission electron microscope (TEM) and Time-of-flight secondary ion spectrometry (ToF-SIMS). It was found that temperature and pressure played different roles in controlling PPB precipitation and grain structure during HIPping, the tendency of grain coarsening under high temperature could be inhibited by increasing HIPping pressure which facilitates the recrystallization. In general, relatively high temperature and pressure of HIPping were preferred to obtain an as-HIPped superalloy FGH96 with diminished PPB precipitation and homogeneously refined grains.

Ab-initio study of thermodynamic properties of boron nanowire at atomic scale

NASA Astrophysics Data System (ADS)

Bhuyan, Prabal D.; Gupta, Sanjeev K.; Sonvane, Y.; Gajjar, P. N.

2018-04-01

In the present work, we have optimized ribbon like zigzag structure of boron (B) nanowire (NW) and investigated vibrational and thermodynamic properties using quasi-harmonic approximations (QHA). All positive phonon in the phonon dispersive curve have confirmed dynamical stability of ribbon B-NW. The thermodynamic properties, like Debye temperature, internal energy and specific heat, are calculated as a function of temperature. The variation of specific heat is proportional to T3 Debye law at lower temperature for B-NW, while it becomes constant above room temperature at 1200K; obeys Dulong-Petit's law. The high Debye temperature of 1120K is observed at ambient temperature, which can be attributed to high thermal conductivity. Our study shows that B-NW with high thermal conductivity could be the next generation electron connector for nanoscale electronic devices.

Nanoclusters as a new family of high temperature superconductors (Conference Presentation)

NASA Astrophysics Data System (ADS)

Halder, Avik; Kresin, Vitaly V.

2017-03-01

Electrons in metal clusters organize into quantum shells, akin to atomic shells in the periodic table. Such nanoparticles are referred to as "superatoms". The electronic shell levels are highly degenerate giving rise to sharp peaks in the density of states, which can enable exceptionally strong electron pairing in certain clusters containing tens to hundreds of atoms. A spectroscopic investigation of size - resolved aluminum nanoclusters has revealed a sharp rise in the density of states near the Fermi level as the temperature decreases towards 100 K. The effect is especially prominent in the closed-shell "magic" cluster Al66 [1, 2]. The characteristics of this behavior are fully consistent with a pairing transition, implying a high temperature superconducting state with Tc < 100K. This value exceeds that of bulk aluminum by two orders of magnitude. As a new class of high-temperature superconductors, such metal nanocluster particles are promising building blocks for high-Tc materials, devices, and networks. ---------- 1. Halder, A., Liang, A., Kresin, V. V. A novel feature in aluminum cluster photoionization spectra and possibility of electron pairing at T 100K. Nano Lett 15, 1410 - 1413 (2015) 2. Halder, A., Kresin, V. V. A transition in the density of states of metal "superatom" nanoclusters and evidence for superconducting pairing at T 100K. Phys. Rev. B 92, 214506 (2015).

High pressure and synchrotron radiation studies of solid state electronic instabilities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pifer, J.H.; Croft, M.C.

This report discusses Eu and General Valence Instabilities; Ce Problem: L{sub 3} Spectroscopy Emphasis; Bulk Property Emphasis; Transition Metal Compound Electronic Structure; Electronic Structure-Phonon Coupling Studies; High Temperature Superconductivity and Oxide Materials; and Novel Materials Collaboration with Chemistry.

IV INTERNATIONAL CONFERENCE ON ATOM AND MOLECULAR PULSED LASERS (AMPL'99): Critical electron density in a self-contained copper vapour laser in the restricted pulse repetition rate

NASA Astrophysics Data System (ADS)

Yakovlenko, Sergei I.

2000-06-01

One of the mechanisms of the inversion breaking in copper vapour lasers caused by a high prepulse electron density is considered. Inversion breaking occurs at a critical electron density Ne cr. If the prepulse electron density exceeds Ne cr, the electron temperature Te cr cannot reach, during a plasma heating pulse, the temperature of ~2eV required for lasing. A simple estimate of Ne cr is made.

Next Generation Non-Vacuum, Maskless, Low Temperature Nanoparticle Ink Laser Digital Direct Metal Patterning for a Large Area Flexible Electronics

PubMed Central

Yeo, Junyeob; Hong, Sukjoon; Lee, Daehoo; Hotz, Nico; Lee, Ming-Tsang; Grigoropoulos, Costas P.; Ko, Seung Hwan

2012-01-01

Flexible electronics opened a new class of future electronics. The foldable, light and durable nature of flexible electronics allows vast flexibility in applications such as display, energy devices and mobile electronics. Even though conventional electronics fabrication methods are well developed for rigid substrates, direct application or slight modification of conventional processes for flexible electronics fabrication cannot work. The future flexible electronics fabrication requires totally new low-temperature process development optimized for flexible substrate and it should be based on new material too. Here we present a simple approach to developing a flexible electronics fabrication without using conventional vacuum deposition and photolithography. We found that direct metal patterning based on laser-induced local melting of metal nanoparticle ink is a promising low-temperature alternative to vacuum deposition– and photolithography-based conventional metal patterning processes. The “digital” nature of the proposed direct metal patterning process removes the need for expensive photomask and allows easy design modification and short turnaround time. This new process can be extremely useful for current small-volume, large-variety manufacturing paradigms. Besides, simple, scalable, fast and low-temperature processes can lead to cost-effective fabrication methods on a large-area polymer substrate. The developed process was successfully applied to demonstrate high-quality Ag patterning (2.1 µΩ·cm) and high-performance flexible organic field effect transistor arrays. PMID:22900011

Next generation non-vacuum, maskless, low temperature nanoparticle ink laser digital direct metal patterning for a large area flexible electronics.

PubMed

Yeo, Junyeob; Hong, Sukjoon; Lee, Daehoo; Hotz, Nico; Lee, Ming-Tsang; Grigoropoulos, Costas P; Ko, Seung Hwan

2012-01-01

Flexible electronics opened a new class of future electronics. The foldable, light and durable nature of flexible electronics allows vast flexibility in applications such as display, energy devices and mobile electronics. Even though conventional electronics fabrication methods are well developed for rigid substrates, direct application or slight modification of conventional processes for flexible electronics fabrication cannot work. The future flexible electronics fabrication requires totally new low-temperature process development optimized for flexible substrate and it should be based on new material too. Here we present a simple approach to developing a flexible electronics fabrication without using conventional vacuum deposition and photolithography. We found that direct metal patterning based on laser-induced local melting of metal nanoparticle ink is a promising low-temperature alternative to vacuum deposition- and photolithography-based conventional metal patterning processes. The "digital" nature of the proposed direct metal patterning process removes the need for expensive photomask and allows easy design modification and short turnaround time. This new process can be extremely useful for current small-volume, large-variety manufacturing paradigms. Besides, simple, scalable, fast and low-temperature processes can lead to cost-effective fabrication methods on a large-area polymer substrate. The developed process was successfully applied to demonstrate high-quality Ag patterning (2.1 µΩ·cm) and high-performance flexible organic field effect transistor arrays.

High-Temperature High-Power Packaging Techniques for HEV Traction Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barlow, F.D.; Elshabini, A.

A key issue associated with the wider adoption of hybrid-electric vehicles (HEV) and plug in hybrid-electric vehicles (PHEV) is the implementation of the power electronic systems that are required in these products [1]. To date, many consumers find the adoption of these technologies problematic based on a financial analysis of the initial cost versus the savings available from reduced fuel consumption. Therefore, one of the primary industry goals is the reduction in the price of these vehicles relative to the cost of traditional gasoline powered vehicles. Part of this cost reduction must come through optimization of the power electronics requiredmore » by these vehicles. In addition, the efficiency of the systems must be optimized in order to provide the greatest range possible. For some drivers, any reduction in the range associated with a potential HEV or PHEV solution in comparison to a gasoline powered vehicle represents a significant barrier to adoption and the efficiency of the power electronics plays an important role in this range. Likewise, high efficiencies are also important since lost power further complicates the thermal management of these systems. Reliability is also an important concern since most drivers have a high level of comfort with gasoline powered vehicles and are somewhat reluctant to switch to a less proven technology. Reliability problems in the power electronics or associated components could not only cause a high warranty cost to the manufacturer, but may also taint these technologies in the consumer's eyes. A larger vehicle offering in HEVs is another important consideration from a power electronics point of view. A larger vehicle will need more horsepower, or a larger rated drive. In some ways this will be more difficult to implement from a cost and size point of view. Both the packaging of these modules and the thermal management of these systems at competitive price points create significant challenges. One way in which significant cost reduction of these systems could be achieved is through the use of a single coolant loop for both the power electronics as well as the internal combustion engine (ICE) [2]. This change would reduce the complexity of the cooling system which currently relies on two loops to a single loop [3]. However, the current nominal coolant temperature entering these inverters is 65 C [3], whereas a normal ICE coolant temperature would be much higher at approximately 100 C. This change in coolant temperature significantly increases the junction temperatures of the devices and creates a number of challenges for both device fabrication and the assembly of these devices into inverters and converters for HEV and PHEV applications. With this change in mind, significant progress has been made on the use of SiC devices for inverters that can withstand much higher junction temperatures than traditional Si based inverters [4,5,6]. However, a key problem which the single coolant loop and high temperature devices is the effective packaging of these devices and related components into a high temperature inverter. The elevated junction temperatures that exist in these modules are not compatible with reliable inverters based on existing packaging technology. This report seeks to provide a literature survey of high temperature packaging and to highlight the issues related to the implementation of high temperature power electronic modules for HEV and PHEV applications. For purposes of discussion, it will be assumed in this report that 200 C is the targeted maximum junction temperature.« less

The steady-state and transient electron transport within bulk zinc-blende indium nitride: The impact of crystal temperature and doping concentration variations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Siddiqua, Poppy; O'Leary, Stephen K., E-mail: stephen.oleary@ubc.ca

2016-03-07

Within the framework of a semi-classical three-valley Monte Carlo electron transport simulation approach, we analyze the steady-state and transient aspects of the electron transport within bulk zinc-blende indium nitride, with a focus on the response to variations in the crystal temperature and the doping concentration. We find that while the electron transport associated with zinc-blende InN is highly sensitive to the crystal temperature, it is not very sensitive to the doping concentration selection. The device consequences of these results are then explored.

Advanced Power Electronics Components

NASA Technical Reports Server (NTRS)

Schwarze, Gene E.

2004-01-01

This paper will give a description and status of the Advanced Power Electronics Materials and Components Technology program being conducted by the NASA Glenn Research Center for future aerospace power applications. The focus of this research program is on the following: 1) New and/or significantly improved dielectric materials for the development of power capacitors with increased volumetric efficiency, energy density, and operating temperature. Materials being investigated include nanocrystalline and composite ceramic dielectrics and diamond-like carbon films; 2) New and/or significantly improved high frequency, high temperature, low loss soft magnetic materials for the development of transformers/inductors with increased power/energy density, electrical efficiency, and operating temperature. Materials being investigated include nanocrystalline and nanocomposite soft magnetic materials; 3) Packaged high temperature, high power density, high voltage, and low loss SiC diodes and switches. Development of high quality 4H- and 6H- SiC atomically smooth substrates to significantly improve device performance is a major emphasis of the SiC materials program; 4) Demonstration of high temperature (> 200 C) circuits using the components developed above.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreno, Gilberto

Thermal modeling was conducted to evaluate and develop thermal management strategies for high-temperature wide-bandgap (WBG)-based power electronics systems. WBG device temperatures of 175 degrees C to 250 degrees C were modeled under various under-hood temperature environments. Modeling result were used to identify the most effective capacitor cooling strategies under high device temperature conditions.

Flexible high-temperature dielectric materials from polymer nanocomposites.

PubMed

Li, Qi; Chen, Lei; Gadinski, Matthew R; Zhang, Shihai; Zhang, Guangzu; Li, Haoyu; Iagodkine, Elissei; Haque, Aman; Chen, Long-Qing; Jackson, Tom; Wang, Qing

2015-07-30

Dielectric materials, which store energy electrostatically, are ubiquitous in advanced electronics and electric power systems. Compared to their ceramic counterparts, polymer dielectrics have higher breakdown strengths and greater reliability, are scalable, lightweight and can be shaped into intricate configurations, and are therefore an ideal choice for many power electronics, power conditioning, and pulsed power applications. However, polymer dielectrics are limited to relatively low working temperatures, and thus fail to meet the rising demand for electricity under the extreme conditions present in applications such as hybrid and electric vehicles, aerospace power electronics, and underground oil and gas exploration. Here we describe crosslinked polymer nanocomposites that contain boron nitride nanosheets, the dielectric properties of which are stable over a broad temperature and frequency range. The nanocomposites have outstanding high-voltage capacitive energy storage capabilities at record temperatures (a Weibull breakdown strength of 403 megavolts per metre and a discharged energy density of 1.8 joules per cubic centimetre at 250 degrees Celsius). Their electrical conduction is several orders of magnitude lower than that of existing polymers and their high operating temperatures are attributed to greatly improved thermal conductivity, owing to the presence of the boron nitride nanosheets, which improve heat dissipation compared to pristine polymers (which are inherently susceptible to thermal runaway). Moreover, the polymer nanocomposites are lightweight, photopatternable and mechanically flexible, and have been demonstrated to preserve excellent dielectric and capacitive performance after intensive bending cycles. These findings enable broader applications of organic materials in high-temperature electronics and energy storage devices.

Flexible high-temperature dielectric materials from polymer nanocomposites

NASA Astrophysics Data System (ADS)

Li, Qi; Chen, Lei; Gadinski, Matthew R.; Zhang, Shihai; Zhang, Guangzu; Li, Haoyu; Haque, Aman; Chen, Long-Qing; Jackson, Tom; Wang, Qing

2015-07-01

Dielectric materials, which store energy electrostatically, are ubiquitous in advanced electronics and electric power systems. Compared to their ceramic counterparts, polymer dielectrics have higher breakdown strengths and greater reliability, are scalable, lightweight and can be shaped into intricate configurations, and are therefore an ideal choice for many power electronics, power conditioning, and pulsed power applications. However, polymer dielectrics are limited to relatively low working temperatures, and thus fail to meet the rising demand for electricity under the extreme conditions present in applications such as hybrid and electric vehicles, aerospace power electronics, and underground oil and gas exploration. Here we describe crosslinked polymer nanocomposites that contain boron nitride nanosheets, the dielectric properties of which are stable over a broad temperature and frequency range. The nanocomposites have outstanding high-voltage capacitive energy storage capabilities at record temperatures (a Weibull breakdown strength of 403 megavolts per metre and a discharged energy density of 1.8 joules per cubic centimetre at 250 degrees Celsius). Their electrical conduction is several orders of magnitude lower than that of existing polymers and their high operating temperatures are attributed to greatly improved thermal conductivity, owing to the presence of the boron nitride nanosheets, which improve heat dissipation compared to pristine polymers (which are inherently susceptible to thermal runaway). Moreover, the polymer nanocomposites are lightweight, photopatternable and mechanically flexible, and have been demonstrated to preserve excellent dielectric and capacitive performance after intensive bending cycles. These findings enable broader applications of organic materials in high-temperature electronics and energy storage devices.

Decay of the electron number density in the nitrogen afterglow using a hairpin resonator probe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Siefert, Nicholas S.; Ganguly, Biswa N.; Sands, Brian L.

A hairpin resonator was used to measure the electron number density in the afterglow of a nitrogen glow discharge (p=0.25-0.75 Torr). Electron number densities were measured using a time-dependent approach similar to the approach used by Spencer et al. [J. Phys. D 20, 923 (1987)]. The decay time of the electron number density was used to determine the electron temperature in the afterglow, assuming a loss of electrons via ambipolar diffusion to the walls. The electron temperature in the near afterglow remained between 0.4 and 0.6 eV, depending on pressure. This confirms the work by Guerra et al. [IEEE Trans.more » Plasma. Sci. 31, 542 (2003)], who demonstrated experimentally and numerically that the electron temperature stays significantly above room temperature via superelastic collisions with highly vibrationally excited ground state molecules and metastables, such as A {sup 3}{sigma}{sub u}{sup +}.« less

Alumina Based 500 C Electronic Packaging Systems and Future Development

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu

2012-01-01

NASA space and aeronautical missions for probing the inner solar planets as well as for in situ monitoring and control of next-generation aeronautical engines require high-temperature environment operable sensors and electronics. A 96% aluminum oxide and Au thick-film metallization based packaging system including chip-level packages, printed circuit board, and edge-connector is in development for high temperature SiC electronics. An electronic packaging system based on this material system was successfully tested and demonstrated with SiC electronics at 500 C for over 10,000 hours in laboratory conditions previously. In addition to the tests in laboratory environments, this packaging system has more recently been tested with a SiC junction field effect transistor (JFET) on low earth orbit through the NASA Materials on the International Space Station Experiment 7 (MISSE7). A SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE7 suite to International Space Station via a Shuttle mission and tested on the orbit for eighteen months. A summary of results of tests in both laboratory and space environments will be presented. The future development of alumina based high temperature packaging using co-fired material systems for improved performance at high temperature and more feasible mass production will also be discussed.

Understanding local degradation of cycled Ni-rich cathode materials at high operating temperature for Li-ion batteries

NASA Astrophysics Data System (ADS)

Hwang, Sooyeon; Kim, Dong Hyun; Chung, Kyung Yoon; Chang, Wonyoung

2014-09-01

We utilize transmission electron microscopy in conjunction with electron energy loss spectroscopy to investigate local degradation that occurs in LixNi0.8Co0.15Al0.05O2 cathode materials (NCA) after 30 cycles with cutoff voltages of 4.3 V and 4.8 V at 55 °C. NCA has a homogeneous crystallographic structure before electrochemical reactions; however, we observed that 30 cycles of charge/discharge reactions induced inhomogeneity in the crystallographic and electronic structures and also introduced porosity particularly at surface area. These changes were more noticeable in samples cycled with higher cutoff voltage of 4.8 V. Effect of operating temperature was further examined by comparing electronic structures of oxygen of the NCA particles cycled at both room temperature and 55 °C. The working temperature has a greater impact on the NCA cathode materials at a cutoff voltage of 4.3 V that is the practical the upper limit voltage in most applications, while a cutoff voltage of 4.8 V is high enough to cause surface degradation even at room temperature.

Electronic Structure at Oxide Interfaces

DTIC Science & Technology

2014-06-01

of materials with desired correlated electron properties such as ferromagnetism with a high Curie temperature, high transition temperature...approximation and therefore the canonical Mott picture is unable to account for the insulating behavior of these materials . We resolve this apparent...the two materials . LaTiO3 shows insulating behavior with a small excitation gap set by Ti d-d transitions and a wide energy separation between Ti d

Low Temperature Photoluminescence (PL) from High Electron Mobility Transistors (HEMTs)

DTIC Science & Technology

2015-03-01

Photoluminescence Form InxAl1-xN Films Deposited by Plasma-Assisted Molecular Beam Epitaxy ,” Submitted to Applied Physics Letters, July 2014. 8 LIST OF...TECHNICAL REPORT RDMR-WD-14-55 LOW TEMPERATURE PHOTOLUMINESCENCE (PL) FROM HIGH ELECTRON MOBILITY TRANSISTORS ( HEMTS ...Mobility Transistors ( HEMTs ) 5. FUNDING NUMBERS 6. AUTHOR(S) Adam T. Roberts and Henry O. Everitt 7. PERFORMING ORGANIZATION NAME(S

Preliminary Study of a Hybrid Helicon-ECR Plasma Source

NASA Astrophysics Data System (ADS)

M. Hala, A.; Oksuz, L.; Ximing, Zhu

2016-08-01

A new type of hybrid discharge is experimentally investigated in this work. A helicon source and an electron cyclotron resonance (ECR) source were combined to produce plasma. As a preliminary study of this type of plasma, the optical emission spectroscopy (OES) method was used to obtain values of electron temperature and density under a series of typical conditions. Generally, it was observed that the electron temperature decreases and the electron density increases as the pressure increased. When increasing the applied power at a certain pressure, the average electron density at certain positions in the discharge does not increase significantly possibly due to the high degree of neutral depletion. Electron temperature increased with power in the hybrid mode. Possible mechanisms of these preliminary observations are discussed.

Heat- and electron-beam-induced transport of gold particles into silicon oxide and silicon studied by in situ high-resolution transmission electron microscopy.

PubMed

Biskupek, Johannes; Kaiser, Ute; Falk, Fritz

2008-06-01

In this study, we describe the transport of gold (Au) nanoparticles from the surface into crystalline silicon (Si) covered by silicon oxide (SiO(2)) as revealed by in situ high-resolution transmission electron microscopy. Complete crystalline Au nanoparticles sink through the SiO(2) layer into the Si substrate when high-dose electron irradiation is applied and temperature is raised above 150 degrees C. Above temperatures of 250 degrees C, the Au nanoparticles finally dissolve into fragments accompanied by crystallization of the amorphized Si substrate around these fragments. The transport process is explained by a wetting process followed by Stokes motion. Modelling this process yields boundaries for the interface energies involved.

Common electronic origin of superconductivity in (Li,Fe)OHFeSe bulk superconductor and single-layer FeSe/SrTiO3 films

PubMed Central

Zhao, Lin; Liang, Aiji; Yuan, Dongna; Hu, Yong; Liu, Defa; Huang, Jianwei; He, Shaolong; Shen, Bing; Xu, Yu; Liu, Xu; Yu, Li; Liu, Guodong; Zhou, Huaxue; Huang, Yulong; Dong, Xiaoli; Zhou, Fang; Liu, Kai; Lu, Zhongyi; Zhao, Zhongxian; Chen, Chuangtian; Xu, Zuyan; Zhou, X. J.

2016-01-01

The mechanism of high-temperature superconductivity in the iron-based superconductors remains an outstanding issue in condensed matter physics. The electronic structure plays an essential role in dictating superconductivity. Recent revelation of distinct electronic structure and high-temperature superconductivity in the single-layer FeSe/SrTiO3 films provides key information on the role of Fermi surface topology and interface in inducing or enhancing superconductivity. Here we report high-resolution angle-resolved photoemission measurements on the electronic structure and superconducting gap of an FeSe-based superconductor, (Li0.84Fe0.16)OHFe0.98Se, with a Tc at 41 K. We find that this single-phase bulk superconductor shows remarkably similar electronic behaviours to that of the superconducting single-layer FeSe/SrTiO3 films in terms of Fermi surface topology, band structure and the gap symmetry. These observations provide new insights in understanding high-temperature superconductivity in the single-layer FeSe/SrTiO3 films and the mechanism of superconductivity in the bulk iron-based superconductors. PMID:26853801

Transport in 2D Systems in the So-Called Metallic Phase

NASA Astrophysics Data System (ADS)

Das Sarma, Sankar

2001-03-01

I will discuss electronic transport in 2D semiconductor systems at low temperatures and densities. In particular, I will consider effects of screening,electron-impurity and electron-phonon interactions, and an external parallel magnetic field on the 2D temperature and density dependent conductivity. I will show that a theory [1] recently developed by Euyheon Hwang and myself may qualitatively account for much of the observed temperature, density, and field dependence of the 2D "metallic" conductivity for electrons in Si MOSFETs and n-GaAs heterostructures, and for holes in Si-Ge heterostructures and p-GaAs systems. I will provide a critique, based on the available experimental data and exact numerical simulations [2] of the Anderson-Hubbard-Mott model, of whether the 2D M-I-T phenomenon is likely to be the high temperature behavior of a T=0 quantum phase transition or the low temperature manifestation of a high-temperature semiclassical transition. Work supported by the US-ONR and the US-ARO. [1] S.Das Sarma and E.H.Hwang,PRL83,164(1999);84,5596(2000); Phys. Rev. B61, R7838(2000). [2] R. Kotlyar and S. Das Sarma, cond-mat/0002304.

Synthesis of AuPd alloyed nanoparticles via room-temperature electron reduction with argon glow discharge as electron source.

PubMed

Yang, Manman; Wang, Zongyuan; Wang, Wei; Liu, Chang-Jun

2014-01-01

Argon glow discharge has been employed as a cheap, environmentally friendly, and convenient electron source for simultaneous reduction of HAuCl4 and PdCl2 on the anodic aluminum oxide (AAO) substrate. The thermal imaging confirms that the synthesis is operated at room temperature. The reduction is conducted with a short time (30 min) under the pressure of approximately 100 Pa. This room-temperature electron reduction operates in a dry way and requires neither hydrogen nor extra heating nor chemical reducing agent. The analyses using X-ray photoelectron spectroscopy (XPS) confirm all the metallic ions have been reduced. The characterization with X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) shows that AuPd alloyed nanoparticles are formed. There also exist some highly dispersed Au and Pd monometallic particles that cannot be detected by XRD and transmission electron microscopy (TEM) because of their small particle sizes. The observed AuPd alloyed nanoparticles are spherical with an average size of 14 nm. No core-shell structure can be observed. The room-temperature electron reduction can be operated in a larger scale. It is an easy way for the synthesis of AuPd alloyed nanoparticles.

Publisher's Note: High-temperature superconductivity stabilized by electron-hole interband coupling in collapsed tetragonal phase of KFe 2 As 2 under high pressure [Phys. Rev. B 91 , 060508(R) (2015)

DOE PAGES

Nakajima, Yasuyuki; Wang, Renxiong; Metz, Tristin; ...

2015-03-09

Here, we report a high-pressure study of simultaneous low-temperature electrical resistivity and Hall effect measurements on high quality single-crystalline KFe 2As 2 using designer diamond anvil cell techniques with applied pressures up to 33 GPa. In the low pressure regime, we show that the superconducting transition temperature T c finds a maximum onset value of 7 K near 2 GPa, in contrast to previous reports that find a minimum T c and reversal of pressure dependence at this pressure. Upon applying higher pressures, this T c is diminished until a sudden drastic enhancement occurs coincident with a first-order structural phasemore » transition into a collapsed tetragonal phase. The appearance of a distinct superconducting phase above 13 GPa is also accompanied by a sudden reversal of dominant charge carrier sign, from hole- to electron-like, which agrees with our band calculations predicting the emergence of an electron pocket and diminishment of hole pockets upon Fermi surface reconstruction. Our results suggest the high-temperature superconducting phase in KFe 2As 2 is substantially enhanced by the presence of nested electron and hole pockets, providing the key ingredient of high-T c superconductivity in iron pnictide superconductors.« less

An Overview of Wide Bandgap Silicon Carbide Sensors and Electronics Development at NASA Glenn Research Center

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Neudeck, Philip G.; Beheim, Glenn M.; Okojie, Robert S.; Chen, Liangyu; Spry, D.; Trunek, A.

2007-01-01

A brief overview is presented of the sensors and electronics development work ongoing at NASA Glenn Research Center which is intended to meet the needs of future aerospace applications. Three major technology areas are discussed: 1) high temperature SiC electronics, 2) SiC gas sensor technology development, and 3) packaging of harsh environment devices. Highlights of this work include world-record operation of SiC electronic devices including 500?C JFET transistor operation with excellent properties, atomically flat SiC gas sensors integrated with an on-chip temperature detector/heater, and operation of a packaged AC amplifier. A description of the state-of-the-art is given for each topic. It is concluded that significant progress has been made and that given recent advancements the development of high temperature smart sensors is envisioned.

Superconducting gap in cuprate high temperature superconductors

NASA Astrophysics Data System (ADS)

Verma, Sanjeev K.; Kumari, Anita; Gupta, Anushri; Indu, B. D.

2018-05-01

The many body quantum dynamical evaluation of double time thermodynamic electron Green's functions followed by generalized electron density of states (EDOS) is used to study the superconducting gap (SG). The dependence of EDOS on defects, anharmonicity and electron-phonon interactions makes the problem quite complicated and challenging but furnishes the more realistic grounds to study the SG both in conventional and high temperature superconductors (HTS). For simplicity, only electron-phonon interaction has been taken up to evaluate the intricate integral to enumerate the SG for representative cuprate HTS: YBa2Cu3O7-δ and results show 2Δ/kBTc ⋍ 7.2.

Nanostructure studies of strongly correlated materials.

PubMed

Wei, Jiang; Natelson, Douglas

2011-09-01

Strongly correlated materials exhibit an amazing variety of phenomena, including metal-insulator transitions, colossal magnetoresistance, and high temperature superconductivity, as strong electron-electron and electron-phonon couplings lead to competing correlated ground states. Recently, researchers have begun to apply nanostructure-based techniques to this class of materials, examining electronic transport properties on previously inaccessible length scales, and applying perturbations to drive systems out of equilibrium. We review progress in this area, particularly emphasizing work in transition metal oxides (Fe(3)O(4), VO(2)), manganites, and high temperature cuprate superconductors. We conclude that such nanostructure-based studies have strong potential to reveal new information about the rich physics at work in these materials.

Empirical models of the electron temperature and density in the nightside venus ionosphere.

PubMed

Brace, L H; Theis, R F; Niemann, H B; Mayr, H G; Hoegy, W R; Nagy, A F

1979-07-06

Empirical models of the electron temperature and electron density of the late afternoon and nightside Venus ionosphere have been derived from Pioneer Venus measurements acquired between 10 December 1978 and 23 March 1979. The models describe the average ionosphere conditions near 18 degrees N latitude between 150 and 700 kilometers altitude for solar zenith angles of 80 degrees to 180 degrees . The average index of solar flux was 200. A major feature of the density model is the factor of 10 decrease beyond 90 degrees followed by a very gradual decrease between 120 degrees and 180 degrees . The density at 150 degrees is about five times greater than observed by Venera 9 and 10 at solar minimum (solar flux approximately 80), a difference that is probably related to the effects of increased solar activity on the processes that maintain the nightside ionosphere. The nightside electron density profile from the model (above 150 kilometers) can be reproduced theoretically either by transport of 0(+) ions from the dayside or by precipitation of low-energy electrons. The ion transport process would require a horizontal flow velocity of about 300 meters per second, a value that is consistent with other Pioneer Venus observations. Although currently available energetic electron data do not yet permit the role of precipitation to be evaluated quantitatively, this process is clearly involved to some extent in the formation of the nightside ionosphere. Perhaps the most surprising feature of the temperature model is that the electron temperature remains high throughout the nightside ionosphere. These high nocturnal temperatures and the existence of a well-defined nightside ionopause suggest that energetic processes occur across the top of the entire nightside ionosphere, maintaining elevated temperatures. A heat flux of 2 x 10(10) electron volts per square centimeter per second, introduced at the ionopause, is consistent with the average electron temperature profile on the nightside at a solar zenith angle of 140 degrees .

Dynamical Cooper pairing in nonequilibrium electron-phonon systems

DOE PAGES

Knap, Michael; Babadi, Mehrtash; Refael, Gil; ...

2016-12-08

In this paper, we analyze Cooper pairing instabilities in strongly driven electron-phonon systems. The light-induced nonequilibrium state of phonons results in a simultaneous increase of the superconducting coupling constant and the electron scattering. We demonstrate that the competition between these effects leads to an enhanced superconducting transition temperature in a broad range of parameters. Finally, our results may explain the observed transient enhancement of superconductivity in several classes of materials upon irradiation with high intensity pulses of terahertz light, and may pave new ways for engineering high-temperature light-induced superconducting states.

GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments

NASA Technical Reports Server (NTRS)

Son, Kyung-ah; Liao, Anna; Lung, Gerald; Gallegos, Manuel; Hatakeh, Toshiro; Harris, Richard D.; Scheick, Leif Z.; Smythe, William D.

2010-01-01

We develop novel GaN-based high temperature and radiation-hard electronics to realize data acquisition electronics and transmitters suitable for operations in harsh planetary environments. In this paper, we discuss our research on metal-oxide-semiconductor (MOS) transistors that are targeted for 500 (sup o)C operation and >2 Mrad radiation hardness. For the target device performance, we develop Schottky-free AlGaN/GaN MOS transistors, where a gate electrode is processed in a MOS layout using an Al2O3 gate dielectric layer....

Ignition conditions relaxation for central hot-spot ignition with an ion-electron non-equilibrium model

NASA Astrophysics Data System (ADS)

Fan, Zhengfeng; Liu, Jie

2016-10-01

We present an ion-electron non-equilibrium model, in which the hot-spot ion temperature is higher than its electron temperature so that the hot-spot nuclear reactions are enhanced while energy leaks are considerably reduced. Theoretical analysis shows that the ignition region would be significantly enlarged in the hot-spot rhoR-T space as compared with the commonly used equilibrium model. Simulations show that shocks could be utilized to create and maintain non-equilibrium conditions within the hot spot, and the hot-spot rhoR requirement is remarkably reduced for achieving self-heating. In NIF high-foot implosions, it is observed that the x-ray enhancement factors are less than unity, which is not self-consistent and is caused by assuming Te =Ti. And from this non-consistency, we could infer that ion-electron non-equilibrium exists in the high-foot implosions and the ion temperature could be 9% larger than the equilibrium temperature.

Electron Energetics in the Martian Dayside Ionosphere: Model Comparisons with MAVEN Data

NASA Technical Reports Server (NTRS)

Sakai, Shotaro; Andersson, Laila; Cravens, Thomas E.; Mitchell, David L.; Mazelle, Christian; Rahmati, Ali; Fowler, Christopher M.; Bougher, Stephen W.; Thiemann, Edward M. B.; Epavier, Francis G.;

Defects and anharmonicity induced electron spectra of YBa2Cu3O7-δ superconductors

NASA Astrophysics Data System (ADS)

Singh, Anu; Indu, B. D.

2018-05-01

The effects of defects and anharmonicities on the electron density of states (EDOS) have been studied in high-temperature superconductors (HTS) adopting the many body quantum dynamical theory of electron Green's functions via a generalized Hamiltonian that includes the effects of electron-phonon interactions, anharmonicities and point impurities. The automatic emergence of pairons and temperature dependence of EDOS are appear as special feature of the theory. The results thus obtained and their numerical analysis for YBa2Cu3O7-δ superconductors clearly demonstrate that the presence of defects, anharmonicities and electron-phonon interactions modifies the behavior of EDOS over a wide range of temperature.

Evolution of microstructure of Haynes 230 and Inconel 617 under mechanical testing at high temperatures

NASA Astrophysics Data System (ADS)

Hrutkay, Kyle

Haynes 230 and Inconel 617 are austenitic nickel based superalloys, which are candidate structural materials for next generation high temperature nuclear reactors. High temperature deformation behavior of Haynes 230 and Inconel 617 have been investigated at the microstructural level in order to gain a better understanding of mechanical properties. Tensile tests were performed at strain rates ranging from 10-3-10-5 s -1 at room temperature, 600 °C, 800 °C and 950 °C. Subsequent microstructural analysis, including Scanning Electron Microscopy, Transmission Electron Microscopy, Energy-Dispersive X-ray Spectroscopy, and X-Ray Diffraction were used to relate the microstructural evolution at high temperatures to that of room temperature samples. Grain sizes and precipitate morphologies were used to determine high temperature behavior and fracture mechanics. Serrated flow was observed at intermediate and high temperatures as a result of discontinuous slip and dynamic recrystallization. The amplitude of serration increased with a decrease in the strain rate and increase in the temperature. Dynamic strain ageing was responsible for serrations at intermediate temperatures by means of a locking and unlocking phenomenon between dislocations and solute atoms. Dynamic recrystallization nucleated by grain and twin bulging resulting in a refinement of grain size. Existing models found in the literature were discussed to explain both of these phenomena.

Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1

PubMed Central

Prakash, Abhinav; Xu, Peng; Faghaninia, Alireza; Shukla, Sudhanshu; Ager, Joel W.; Lo, Cynthia S.; Jalan, Bharat

2017-01-01

Wide bandgap perovskite oxides with high room temperature conductivities and structural compatibility with a diverse family of organic/inorganic perovskite materials are of significant interest as transparent conductors and as active components in power electronics. Such materials must also possess high room temperature mobility to minimize power consumption and to enable high-frequency applications. Here, we report n-type BaSnO3 films grown using hybrid molecular beam epitaxy with room temperature conductivity exceeding 104 S cm−1. Significantly, these films show room temperature mobilities up to 120 cm2 V−1 s−1 even at carrier concentrations above 3 × 1020 cm−3 together with a wide bandgap (3 eV). We examine the mobility-limiting scattering mechanisms by calculating temperature-dependent mobility, and Seebeck coefficient using the Boltzmann transport framework and ab-initio calculations. These results place perovskite oxide semiconductors for the first time on par with the highly successful III–N system, thereby bringing all-transparent, high-power oxide electronics operating at room temperature a step closer to reality. PMID:28474675

Wide bandgap BaSnO 3 films with room temperature conductivity exceeding 10 4 S cm -1

DOE PAGES

Prakash, Abhinav; Xu, Peng; Faghaninia, Alireza; ...

2017-05-05

Wide bandgap perovskite oxides with high room temperature conductivities and structural compatibility with a diverse family of organic/inorganic perovskite materials are of sign ificant interest as transparent conductors and as active components in power electronics. Such materials must also possess high room temperature mobility to minimize power consumption and to enable high-frequency applications. Here, we report n-type BaSnO 3 films grown using hybrid molecular beam epitaxy with room temperature conductivity exceeding 10 4 S cm -1 . Significantly, these films show room temperature mobilities up to 120 cm 2 V -1 s -1 even at carrier concentrations abovemore » 3 × 10 20 cm -3 together with a wide bandgap (3 eV). We examine the mobility-limiting scattering mechanisms by calculating temperature-dependent mobility, and Seebeck coefficient using the Boltzmann transport framework and ab-initio calculations. These results place perovskite oxide semiconductors for the first time on par with the highly successful III-N system, thereby bringing all-transparent, high-power oxide electronics operating at room temperature a step closer to reality.« less

Thomson-scattering measurements in the collective and noncollective regimes in laser produced plasmas (invited).

PubMed

Ross, J S; Glenzer, S H; Palastro, J P; Pollock, B B; Price, D; Tynan, G R; Froula, D H

2010-10-01

We present simultaneous Thomson-scattering measurements of light scattered from ion-acoustic and electron-plasma fluctuations in a N(2) gas jet plasma. By varying the plasma density from 1.5×10(18) to 4.0×10(19) cm(-3) and the temperature from 100 to 600 eV, we observe the transition from the collective regime to the noncollective regime in the high-frequency Thomson-scattering spectrum. These measurements allow an accurate local measurement of fundamental plasma parameters: electron temperature, density, and ion temperature. Furthermore, experiments performed in the high densities typically found in laser produced plasmas result in scattering from electrons moving near the phase velocity of the relativistic plasma waves. Therefore, it is shown that even at low temperatures relativistic corrections to the scattered power must be included.

[Scanning electron microscopy of heat-damaged bone tissue].

PubMed

Harsanyl, L

1977-02-01

Parts of diaphyses of bones were exposed to high temperature of 200-1300 degrees C. Damage to the bone tissue caused by the heat was investigated. The scanning electron microscopic picture seems to be characteristic of the temperature applied. When the bones heated to the high temperature of 700 degrees C characteristic changes appear on the periostal surface, higher temperatura on the other hand causes damage to the compact bone tissue and can be observed on the fracture-surface. Author stresses the importance of this technique in the legal medicine and anthropology.

Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brazzini, Tommaso, E-mail: tommaso.brazzini@bristol.ac.uk; Sun, Huarui; Uren, Michael J.

2015-05-25

Hot electrons in AlGaN/GaN high electron mobility transistors are studied during radio frequency (RF) and DC operation by means of electroluminescence (EL) microscopy and spectroscopy. The measured EL intensity is decreased under RF operation compared to DC at the same average current, indicating a lower hot electron density. This is explained by averaging the DC EL intensity over the measured load line used in RF measurements, giving reasonable agreement. In addition, the hot electron temperature is lower by up to 15% under RF compared to DC, again at least partially explainable by the weighted averaging along the specific load line.more » However, peak electron temperature under RF occurs at high V{sub DS} and low I{sub DS} where EL is insignificant suggesting that any wear-out differences between RF and DC stress of the devices will depend on the balance between hot-carrier and field driven degradation mechanisms.« less

Development of a Method for Local Electron Temperature and Density Measurements in the Divertor of the JET Tokamak

NASA Technical Reports Server (NTRS)

Jupen, C.; Meigs, A.; Bhatia, A. K.; Brezinsek, S.; OMullane, M.

2004-01-01

Plasma volume recombination in the divertor, a process in which charged particles recombine to neutral atoms, contributes to plasma detachment and hence cooling at the divertor target region. Detachment has been observed at JET and other tokamaks and is known to occur at low electron temperatures (T(sub e)<1 eV) and at high electron density (n(sub e)>10(exp 20)/m(exp 3)). The ability to measure such low temperatures is therefore of interest for modelling the divertor. In present work we report development of a new spectroscopic technique for investigation of local electron density (n(sub e)) and temperature (T,) in the outer divertor at JET.

Spectroscopic results in helium from the NASA Lewis Bumpy Torus plasma. [ion heating by Penning discharge in confinement geometry

NASA Technical Reports Server (NTRS)

Richardson, R. W.

1974-01-01

Spectroscopic measurements were carried out on the NASA Lewis Bumpy Torus experiment in which a steady state ion heating method based on the modified Penning discharge is applied in a bumpy torus confinement geometry. Electron temperatures in pure helium are measured from the ratio of spectral line intensities. Measured electron temperatures range from 10 to 100 eV. Relative electron densities are also measured over the range of operating conditions. Radial profiles of temperature and relative density are measured in the two basic modes of operation of the device called the low and high pressure modes. The electron temperatures are used to estimate particle confinement times based on a steady state particle balance.

SiC Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1998-01-01

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Silicon Carbide Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2006-01-01

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Experimental measurements and theoretical model of the cryogenic performance of bialkali photocathode and characterization with Monte Carlo simulation

DOE PAGES

Xie, Huamu; Ben-Zvi, Ilan; Rao, Triveni; ...

2016-10-19

High-average-current, high-brightness electron sources have important applications, such as in high-repetition-rate free-electron lasers, or in the electron cooling of hadrons. Bialkali photocathodes are promising high-quantum-efficiency (QE) cathode materials, while superconducting rf (SRF) electron guns offer continuous-mode operation at high acceleration, as is needed for high-brightness electron sources. Thus, we must have a comprehensive understanding of the performance of bialkali photocathode at cryogenic temperatures when they are to be used in SRF guns. To remove the heat produced by the radio-frequency field in these guns, the cathode should be cooled to cryogenic temperatures.We recorded an 80% reduction of the QE uponmore » cooling the K 2CsSb cathode from room temperature down to the temperature of liquid nitrogen in Brookhaven National Laboratory (BNL)’s 704 MHz SRF gun.We conducted several experiments to identify the underlying mechanism in this reduction. The change in the spectral response of the bialkali photocathode, when cooled from room temperature (300 K) to 166 K, suggests that a change in the ionization energy (defined as the energy gap from the top of the valence band to vacuum level) is the main reason for this reduction.We developed an analytical model of the process, based on Spicer’s three-step model. The change in ionization energy, with falling temperature, gives a simplified description of the QE’s temperature dependence.We also developed a 2D Monte Carlo code to simulate photoemission that accounts for the wavelength-dependent photon absorption in the first step, the scattering and diffusion in the second step, and the momentum conservation in the emission step. From this simulation, we established a correlation between ionization energy and reduction in the QE. The simulation yielded results comparable to those from the analytical model. The simulation offers us additional capabilities such as calculation of the intrinsic emittance, the temporal response, and the thickness dependence of the QE for the K 2CsSb photocathode.« less

Experimental measurements and theoretical model of the cryogenic performance of bialkali photocathode and characterization with Monte Carlo simulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xie, Huamu; Ben-Zvi, Ilan; Rao, Triveni

High-average-current, high-brightness electron sources have important applications, such as in high-repetition-rate free-electron lasers, or in the electron cooling of hadrons. Bialkali photocathodes are promising high-quantum-efficiency (QE) cathode materials, while superconducting rf (SRF) electron guns offer continuous-mode operation at high acceleration, as is needed for high-brightness electron sources. Thus, we must have a comprehensive understanding of the performance of bialkali photocathode at cryogenic temperatures when they are to be used in SRF guns. To remove the heat produced by the radio-frequency field in these guns, the cathode should be cooled to cryogenic temperatures.We recorded an 80% reduction of the QE uponmore » cooling the K 2CsSb cathode from room temperature down to the temperature of liquid nitrogen in Brookhaven National Laboratory (BNL)’s 704 MHz SRF gun.We conducted several experiments to identify the underlying mechanism in this reduction. The change in the spectral response of the bialkali photocathode, when cooled from room temperature (300 K) to 166 K, suggests that a change in the ionization energy (defined as the energy gap from the top of the valence band to vacuum level) is the main reason for this reduction.We developed an analytical model of the process, based on Spicer’s three-step model. The change in ionization energy, with falling temperature, gives a simplified description of the QE’s temperature dependence.We also developed a 2D Monte Carlo code to simulate photoemission that accounts for the wavelength-dependent photon absorption in the first step, the scattering and diffusion in the second step, and the momentum conservation in the emission step. From this simulation, we established a correlation between ionization energy and reduction in the QE. The simulation yielded results comparable to those from the analytical model. The simulation offers us additional capabilities such as calculation of the intrinsic emittance, the temporal response, and the thickness dependence of the QE for the K 2CsSb photocathode.« less

Effect of crystal orientation on conductivity and electron mobility in single-crystal alumina

NASA Technical Reports Server (NTRS)

Will, Fritz G.; Delorenzi, Horst G.; Janora, Kevin H.

1992-01-01

The electrical conductivity of high-purity, single-crystal alumina is determined parallel to and perpendicular to the c-axis. The mean conductivity of four samples of each orientation is a factor 3.3 higher parallel to the c-axis than perpendicular to it. The conductivity as a function of temperature is attributed to extrinsic electron conduction at temperatures from 400 to 900 C, and intrinsic semiconduction at temperatures from 900 to 1300 C. In the high-temperature regime, the slope on all eight specimens is 4.7 +/- 0.1 eV. Hence, the thermal bandgap at O K is 9.4 +/- 0.2 eV.

Influence of annealing temperature on Raman and photoluminescence spectra of electron beam evaporated TiO₂ thin films.

PubMed

Vishwas, M; Narasimha Rao, K; Chakradhar, R P S

2012-12-01

Titanium dioxide (TiO(2)) thin films were deposited on fused quartz substrates by electron beam evaporation method at room temperature. The films were annealed at different temperatures in ambient air. The surface morphology/roughness at different annealing temperatures were analyzed by atomic force microscopy (AFM). The crystallinity of the film has improved with the increase of annealing temperature. The effect of annealing temperature on optical, photoluminescence and Raman spectra of TiO(2) films were investigated. The refractive index of TiO(2) films were studied by envelope method and reflectance spectra and it is observed that the refractive index of the films was high. The photoluminescence intensity corresponding to green emission was enhanced with increase of annealing temperature. The peaks in Raman spectra depicts that the TiO(2) film is of anatase phase after annealing at 300°C and higher. The films show high refractive index, good optical quality and photoluminescence characteristics suggest that possible usage in opto-electronic and optical coating applications. Copyright © 2012 Elsevier B.V. All rights reserved.

Comparison of cryogenic low-pass filters.

PubMed

Thalmann, M; Pernau, H-F; Strunk, C; Scheer, E; Pietsch, T

2017-11-01

Low-temperature electronic transport measurements with high energy resolution require both effective low-pass filtering of high-frequency input noise and an optimized thermalization of the electronic system of the experiment. In recent years, elaborate filter designs have been developed for cryogenic low-level measurements, driven by the growing interest in fundamental quantum-physical phenomena at energy scales corresponding to temperatures in the few millikelvin regime. However, a single filter concept is often insufficient to thermalize the electronic system to the cryogenic bath and eliminate spurious high frequency noise. Moreover, the available concepts often provide inadequate filtering to operate at temperatures below 10 mK, which are routinely available now in dilution cryogenic systems. Herein we provide a comprehensive analysis of commonly used filter types, introduce a novel compact filter type based on ferrite compounds optimized for the frequency range above 20 GHz, and develop an improved filtering scheme providing adaptable broad-band low-pass characteristic for cryogenic low-level and quantum measurement applications at temperatures down to few millikelvin.

Comparison of cryogenic low-pass filters

NASA Astrophysics Data System (ADS)

Thalmann, M.; Pernau, H.-F.; Strunk, C.; Scheer, E.; Pietsch, T.

2017-11-01

Low-temperature electronic transport measurements with high energy resolution require both effective low-pass filtering of high-frequency input noise and an optimized thermalization of the electronic system of the experiment. In recent years, elaborate filter designs have been developed for cryogenic low-level measurements, driven by the growing interest in fundamental quantum-physical phenomena at energy scales corresponding to temperatures in the few millikelvin regime. However, a single filter concept is often insufficient to thermalize the electronic system to the cryogenic bath and eliminate spurious high frequency noise. Moreover, the available concepts often provide inadequate filtering to operate at temperatures below 10 mK, which are routinely available now in dilution cryogenic systems. Herein we provide a comprehensive analysis of commonly used filter types, introduce a novel compact filter type based on ferrite compounds optimized for the frequency range above 20 GHz, and develop an improved filtering scheme providing adaptable broad-band low-pass characteristic for cryogenic low-level and quantum measurement applications at temperatures down to few millikelvin.

Observation of high-temperature bubbles in an ECR plasma

NASA Astrophysics Data System (ADS)

Terasaka, K.; Yoshimura, S.; Tanaka, M. Y.

2018-05-01

Creation and annihilation of high-temperature bubbles have been observed in an electron cyclotron resonance plasma. The electron temperature in the bubble core is three times higher than that in the ambient region, and the size perpendicular to the magnetic field is much smaller than the plasma diameter. Formation of a bubble accompanies large negative spikes in the floating potential of a Langmuir probe, and the spatiotemporal behavior of the bubble has been visualized with a high-impedance wire grid detector. It is found that the bubble is in a prolate spheroidal shape with the axis along the magnetic field and occurs randomly in time and independently in space.

An All-Silk-Derived Dual-Mode E-skin for Simultaneous Temperature-Pressure Detection.

PubMed

Wang, Chunya; Xia, Kailun; Zhang, Mingchao; Jian, Muqiang; Zhang, Yingying

2017-11-15

Flexible skin-mimicking electronics are highly desired for development of smart human-machine interfaces and wearable human-health monitors. Human skins are able to simultaneously detect different information, such as touch, friction, temperature, and humidity. However, due to the mutual interferences of sensors with different functions, it is still a big challenge to fabricate multifunctional electronic skins (E-skins). Herein, a combo temperature-pressure E-skin is reported through assembling a temperature sensor and a strain sensor in both of which flexible and transparent silk-nanofiber-derived carbon fiber membranes (SilkCFM) are used as the active material. The temperature sensor presents high temperature sensitivity of 0.81% per centigrade. The strain sensor shows an extremely high sensitivity with a gauge factor of ∼8350 at 50% strain, enabling the detection of subtle pressure stimuli that induce local strain. Importantly, the structure of the SilkCFM in each sensor is designed to be passive to other stimuli, enabling the integrated E-skin to precisely detect temperature and pressure at the same time. It is demonstrated that the E-skin can detect and distinguish exhaling, finger pressing, and spatial distribution of temperature and pressure, which cannot be realized using single mode sensors. The remarkable performance of the silk-based combo temperature-pressure sensor, together with its green and large-scalable fabrication process, promising its applications in human-machine interfaces and soft electronics.

SOI N-Channel Field Effect Transistors, CHT-NMOS80, for Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Almad

2009-01-01

Extreme temperatures, both hot and cold, are anticipated in many of NASA space exploration missions as well as in terrestrial applications. One can seldom find electronics that are capable of operation under both regimes. Even for operation under one (hot or cold) temperature extreme, some thermal controls need to be introduced to provide appropriate ambient temperatures so that spacecraft on-board or field on-site electronic systems work properly. The inclusion of these controls, which comprise of heating elements and radiators along with their associated structures, adds to the complexity in the design of the system, increases cost and weight, and affects overall reliability. Thus, it would be highly desirable and very beneficial to eliminate these thermal measures in order to simplify system's design, improve efficiency, reduce development and launch costs, and improve reliability. These requirements can only be met through the development of electronic parts that are designed for proper and efficient operation under extreme temperature conditions. Silicon-on-insulator (SOI) based devices are finding more use in harsh environments due to the benefits that their inherent design offers in terms of reduced leakage currents, less power consumption, faster switching speeds, good radiation tolerance, and extreme temperature operability. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. The objective of this work was to evaluate the performance of a new commercial-off-the-shelf (COTS) SOI parts over an extended temperature range and to determine the effects of thermal cycling on their performance. The results will establish a baseline on the suitability of such devices for use in space exploration missions under extreme temperatures, and will aid mission planners and circuit designers in the proper selection of electronic parts and circuits. The electronic part investigated in this work comprised of a CHT-NMOS80 high temperature N-channel MOSFET (metal-oxide semiconductor field-effect transistor) device that was manufactured by CISSOID. This high voltage, medium-power transistor is fabricated using SOI processes and is designed for extreme wide temperature applications such as geothermal well logging, aerospace and avionics, and automotive industry. It has a high DC current capability and is specified for operation in the temperature range of -55 C to +225 C

Ambient-temperature diffusion and gettering of Pt atoms in GaN with surface defect region under 60Co gamma or MeV electron irradiation

NASA Astrophysics Data System (ADS)

Hou, Ruixiang; Li, Lei; Fang, Xin; Xie, Ziang; Li, Shuti; Song, Weidong; Huang, Rong; Zhang, Jicai; Huang, Zengli; Li, Qiangjie; Xu, Wanjing; Fu, Engang; Qin, G. G.

2018-01-01

Generally, the diffusion and gettering of impurities in GaN needs high temperature. Calculated with the ambient-temperature extrapolation value of the high temperature diffusivity of Pt atoms in GaN reported in literature, the time required for Pt atoms diffusing 1 nm in GaN at ambient temperature is about 19 years. Therefore, the ambient-temperature diffusion and gettering of Pt atoms in GaN can hardly be observed. In this work, the ambient-temperature diffusion and gettering of Pt atoms in GaN is reported for the first time. It is demonstrated by use of secondary ion mass spectroscopy that in the condition of introducing a defect region on the GaN film surface by plasma, and subsequently, irradiated by 60Co gamma-ray or 3 MeV electrons, the ambient-temperature diffusion and gettering of Pt atoms in GaN can be detected. It is more obvious with larger irradiation dose and higher plasma power. With a similar surface defect region, the ambient-temperature diffusion and gettering of Pt atoms in GaN stimulated by 3 MeV electron irradiation is more marked than that stimulated by gamma irradiation. The physical mechanism of ambient-temperature diffusion and gettering of Pt atoms in a GaN film with a surface defect region stimulated by gamma or MeV electron irradiation is discussed.

Improved Estimation of Electron Temperature from Rocket-borne Impedance Probes

NASA Astrophysics Data System (ADS)

Rowland, D. E.; Wolfinger, K.; Stamm, J. D.

2017-12-01

The impedance probe technique is a well known method for determining high accuracy measurements of electron number density in the Earth's ionosphere. We present analysis of impedance probe data from several sounding rockets at low, mid-, and auroral latitudes, including high cadence estimates of the electron temperature, derived from analytical fits to the antenna impedance curves. These estimates compare favorably with independent estimates from Langmuir Probes, but at much higher temporal and spatial resolution, providing a capability to resolve small-scale temperature fluctuations. We also present some considerations for the design of impedance probes, including assessment of the effects of resonance damping due to rocket motion, effects of wake and spin modulation, and aspect angle to the magnetic field.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Narumanchi, S.; Bennion, K.; DeVoto, D.

This report describes the research into advanced liquid cooling, integrated power module cooling, high temperature air cooled power electronics, two-phase cooling for power electronics, and electric motor thermal management by NREL's Power Electronics group in FY13.

High pressure and synchrotron radiation studies of solid state electronic instabilities. Final technial report, May 1, 1984--April 1987

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pifer, J.H.; Croft, M.C.

This report discusses Eu and General Valence Instabilities; Ce Problem: L{sub 3} Spectroscopy Emphasis; Bulk Property Emphasis; Transition Metal Compound Electronic Structure; Electronic Structure-Phonon Coupling Studies; High Temperature Superconductivity and Oxide Materials; and Novel Materials Collaboration with Chemistry.

Self-correcting electronically scanned pressure sensor

NASA Technical Reports Server (NTRS)

Gross, C. (Inventor)

1983-01-01

A multiple channel high data rate pressure sensing device is disclosed for use in wind tunnels, spacecraft, airborne, process control, automotive, etc., pressure measurements. Data rates in excess of 100,000 measurements per second are offered with inaccuracies from temperature shifts less than 0.25% (nominal) of full scale over a temperature span of 55 C. The device consists of thirty-two solid state sensors, signal multiplexing electronics to electronically address each sensor, and digital electronic circuitry to automatically correct the inherent thermal shift errors of the pressure sensors and their associated electronics.

Negative differential resistance in GaN tunneling hot electron transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Zhichao; Nath, Digbijoy; Rajan, Siddharth

Room temperature negative differential resistance is demonstrated in a unipolar GaN-based tunneling hot electron transistor. Such a device employs tunnel-injected electrons to vary the electron energy and change the fraction of reflected electrons, and shows repeatable negative differential resistance with a peak to valley current ratio of 7.2. The device was stable when biased in the negative resistance regime and tunable by changing collector bias. Good repeatability and double-sweep characteristics at room temperature show the potential of such device for high frequency oscillators based on quasi-ballistic transport.

On the generation of magnetosheath lion roars

NASA Technical Reports Server (NTRS)

Lee, L. C.; Wu, C. S.; Price, C. P.

1987-01-01

A theoretical model is proposed to discuss the electron dynamics associated with the mirror waves and their effects on the generation of the observed lion roars in the magnetosheath. It is pointed out that the usual double-adiabatic theory of hydromagnetics is not applicable to the electrons in mirror waves. Although the electron magnetic moment is conserved, the energy of each electron in the mirror waves is expected to be constant. Assuming an initial electron temperature anisotropy, it can be shown that in the low field region the electron temperature and thermal anisotropy are higher than the initial values, whereas in the high field region the electron temperature and anisotropy are lower. This point can lead to a theoretical explanation of the important features of the observed lion roars. Then present discussion complements the existing theories in the literature.

Curie temperature behavior in half-metallic ferromagnetic double perovskites within the electronic correlation picture

NASA Astrophysics Data System (ADS)

Estrada, F.; Guzmán, E. J.; Navarro, O.; Avignon, M.

2018-05-01

The half-metallic ferromagnetic compound Sr2FeMoO6 is considered a fundamental material to understand the role of electronic parameters controlling the half-metallic ground state and high Curie temperature in double perovskite. We present an electronic approach using the Green's function technique and the renormalization perturbation expansion method to study the thermodynamical properties of double perovskites. The model is based on a correlated electron picture with localized Fe spins and conduction electrons interacting with the local spins via a double-exchange-type mechanism. Electron correlations within the conduction band are also included in order to study the Curie temperature TC. Our results show an increases of TC by increasing the carrier density in La-doped Sr2FeMoO6 compounds in contrast to the case of uncorrelated itinerant electrons.

Evaluation of the Benefits of High Temperature Electronics for Lunar Power Systems

NASA Technical Reports Server (NTRS)

Fay, Edgar H.

1992-01-01

A comparative evaluation is conducted of several approaches to the cooling of a lunar power system's power electronics, in view of the 400 K temperature of the 354-hour lunar day and lunar dust accumulation, which can contaminate power components and radiator surfaces. It is noted that, by raising the power electronics' baseplate temperature to 480 K, no thermal control system is required; the surface of the baseplate acts as its own, waste-heat-rejecting radiator, but the baseplate must be kept clean of lunar dust contamination.

Disentangling the surface and bulk electronic structures of LaOFeAs

DOE PAGES

Zhang, P.; Ma, J.; Qian, T.; ...

2016-09-20

We performed a comprehensive angle-resolved photoemission spectroscopy study of the electronic band structure of LaOFeAs single crystals. We found that samples cleaved at low temperature show an unstable and very complicated band structure, whereas samples cleaved at high temperature exhibit a stable and clearer electronic structure. Using in situ surface doping with K and supported by first-principles calculations, we identify both surface and bulk bands. Our assignments are confirmed by the difference in the temperature dependence of the bulk and surface states.

Extension of operational regime in high-temperature plasmas and effect of ECRH on ion thermal transport in the LHD

NASA Astrophysics Data System (ADS)

Takahashi, H.; Nagaoka, K.; Murakami, S.; Osakabe, M.; Nakano, H.; Ida, K.; Tsujimura, T. I.; Kubo, S.; Kobayashi, T.; Tanaka, K.; Seki, R.; Takeiri, Y.; Yokoyama, M.; Maeta, S.; Nakata, M.; Yoshinuma, M.; Yamada, I.; Yasuhara, R.; Ido, T.; Shimizu, A.; Tsuchiya, H.; Tokuzawa, T.; Goto, M.; Oishi, T.; Morita, S.; Suzuki, C.; Emoto, M.; Tsumori, K.; Ikeda, K.; Kisaki, M.; Shimozuma, T.; Yoshimura, Y.; Igami, H.; Makino, R.; Seki, T.; Kasahara, H.; Saito, K.; Kamio, S.; Nagasaki, K.; Mutoh, T.; Kaneko, O.; Morisaki, T.; the LHD Experiment Group

2017-08-01

A simultaneous high ion temperature (T i) and high electron temperature (T e) regime was successfully extended due to an optimized heating scenario in the LHD. Such high-temperature plasmas were realized by the simultaneous formation of an electron internal transport barrier (ITB) and an ion ITB by the combination of high power NBI and ECRH. Although the ion thermal confinement was degraded in the plasma core with an increase of T e/T i by the on-axis ECRH, it was found that the ion thermal confinement was improved at the plasma edge. The normalized ion thermal diffusivity {χ\\text{i}}/T\\text{i}1.5 at the plasma edge was reduced by 70%. The improvement of the ion thermal confinement at the edge led to an increase in T i in the entire plasma region, even though the core transport was degraded.

Free-standing nanocomposites with high conductivity and extensibility.

PubMed

Chun, Kyoung-Yong; Kim, Shi Hyeong; Shin, Min Kyoon; Kim, Youn Tae; Spinks, Geoffrey M; Aliev, Ali E; Baughman, Ray H; Kim, Seon Jeong

2013-04-26

The prospect of electronic circuits that are stretchable and bendable promises tantalizing applications such as skin-like electronics, roll-up displays, conformable sensors and actuators, and lightweight solar cells. The preparation of highly conductive and highly extensible materials remains a challenge for mass production applications, such as free-standing films or printable composite inks. Here we present a nanocomposite material consisting of carbon nanotubes, ionic liquid, silver nanoparticles, and polystyrene-polyisoprene-polystyrene having a high electrical conductivity of 3700 S cm(-1) that can be stretched to 288% without permanent damage. The material is prepared as a concentrated dispersion suitable for simple processing into free-standing films. For the unstrained state, the measured thermal conductivity for the electronically conducting elastomeric nanoparticle film is relatively high and shows a non-metallic temperature dependence consistent with phonon transport, while the temperature dependence of electrical resistivity is metallic. We connect an electric fan to a DC power supply using the films to demonstrate their utility as an elastomeric electronic interconnect. The huge strain sensitivity and the very low temperature coefficient of resistivity suggest their applicability as strain sensors, including those that operate directly to control motors and other devices.

Thermal response of the F region ionosphere in artificial modification experiments by HF radio waves

NASA Technical Reports Server (NTRS)

Mantas, G. P.; Lahoz, C. H.; Carlson, H. C., Jr.

1981-01-01

The thermal response of the nighttime F region ionosphere to local heating by HF radio waves has been observed with the incoherent scatter radar at Arecibo, Puerto Rico. The observations consist of high-resolution space and time variation of the electron temperature as a high-power HF transmitter is switched on and off with a period 240 s. As soon as the HF transmitter is turned on, the electron temperature begins to rise rapidly in a narrow altitude region near 300 km, below the F2 layer peak. The electron temperature perturbation subsequently spreads over a broader altitude region. The observations are compared with the anticipated thermal response of the ionosphere based on numerical solutions of the coupled time-dependent heat conduction equations for the electron and composite ion gases and are found to be in good agreement over the entire altitude region covered by the observations.

Thermionic Power Cell To Harness Heat Energies for Geothermal Applications

NASA Technical Reports Server (NTRS)

Manohara, Harish; Mojarradi, Mohammad; Greer, Harold F.

2011-01-01

A unit thermionic power cell (TPC) concept has been developed that converts natural heat found in high-temperature environments (460 to 700 C) into electrical power for in situ instruments and electronics. Thermionic emission of electrons occurs when an emitter filament is heated to gwhite hot h temperatures (>1,000 C) allowing electrons to overcome the potential barrier and emit into the vacuum. These electrons are then collected by an anode, and transported to the external circuit for energy storage.

Phonon-electron coupling and tunneling effect on charge transport in organic semi-conductor crystals of Cn-BTBT.

PubMed

Zhou, Yecheng; Deng, Wei-Qiao; Zhang, Hao-Li

2016-09-14

Cn-[1]benzothieno[3,2-b][1]-benzothiophene (BTBT) crystals show very high hole mobilities in experiments. These high mobilities are beyond existing theory prediction. Here, we employed different quantum chemistry methods to investigate charge transfer in Cn-BTBT crystals and tried to find out the reasons for the underestimation in the theory. It was found that the hopping rate estimated by the Fermi Golden Rule is higher than that of the Marcus theory due to the high temperature approximation and failure at the classic limit. More importantly, molecular dynamics simulations revealed that the phonon induced fluctuation of electronic transfer integral is much larger than the average of the electronic transfer integral itself. Mobilities become higher if simulations implement the phonon-electron coupling. This conclusion indicates that the phonon-electron coupling promotes charge transfer in organic semi-conductors at room temperature.

Phonon-electron coupling and tunneling effect on charge transport in organic semi-conductor crystals of Cn-BTBT

NASA Astrophysics Data System (ADS)

Zhou, Yecheng; Deng, Wei-Qiao; Zhang, Hao-Li

2016-09-01

Cn-[1]benzothieno[3,2-b][1]-benzothiophene (BTBT) crystals show very high hole mobilities in experiments. These high mobilities are beyond existing theory prediction. Here, we employed different quantum chemistry methods to investigate charge transfer in Cn-BTBT crystals and tried to find out the reasons for the underestimation in the theory. It was found that the hopping rate estimated by the Fermi Golden Rule is higher than that of the Marcus theory due to the high temperature approximation and failure at the classic limit. More importantly, molecular dynamics simulations revealed that the phonon induced fluctuation of electronic transfer integral is much larger than the average of the electronic transfer integral itself. Mobilities become higher if simulations implement the phonon-electron coupling. This conclusion indicates that the phonon-electron coupling promotes charge transfer in organic semi-conductors at room temperature.

High pressure and temperature equation of state and spectroscopic study of CeO 2

DOE PAGES

Jacobsen, Matthew K.; Velisavljevic, Nenad; Dattelbaum, Dana Mcgraw; ...

2016-03-17

One of the most widely used x-ray standards and a highly applied component of catalysis systems, CeO 2 has been studied for the purpose of better understanding its equation of state and electronic properties. Diamond anvil cells have been used to extend the equation of state for this material to 130 GPa and explore the electronic behavior with applied load. From the x-ray diffraction studies, it has been determined that the high pressure phase transition extends from approximately 35–75 GPa at ambient temperature. Elevation of temperature is found to decrease the initiation pressure for this transition, with multiple distinct temperaturemore » regions which indicate structural related anomalies. In addition, hydrostatic and non-hydrostatic effects are compared and exhibit a drastic difference in bulk moduli. Furthermore, the electronic results indicate a change in the scattering environment of the cerium atom, associated with the high pressure phase transition. Overall, these results present the first megabar pressure study and the first high pressure and temperature study of ceria. Additionally, this shows the first combined study of the K and L III edges of this material to 33 GPa.« less

Spectroscopy of metal "superatom" nanoclusters and high-Tc superconducting pairing

NASA Astrophysics Data System (ADS)

Halder, Avik; Kresin, Vitaly V.

2015-12-01

A unique property of metal nanoclusters is the "superatom" shell structure of their delocalized electrons. The electronic shell levels are highly degenerate and therefore represent sharp peaks in the density of states. This can enable exceptionally strong electron pairing in certain clusters composed of tens to hundreds of atoms. In a finite system, such as a free nanocluster or a nucleus, pairing is observed most clearly via its effect on the energy spectrum of the constituent fermions. Accordingly, we performed a photoionization spectroscopy study of size-resolved aluminum nanoclusters and observed a rapid rise in the near-threshold density of states of several clusters (A l37 ,44 ,66 ,68 ) with decreasing temperature. The characteristics of this behavior are consistent with compression of the density of states by a pairing transition into a high-temperature superconducting state with Tc≳100 K. This value exceeds that of bulk aluminum by two orders of magnitude. These results highlight the potential of novel pairing effects in size-quantized systems and the possibility to attain even higher critical temperatures by optimizing the particles' size and composition. As a new class of high-temperature superconductors, such metal nanocluster particles are promising building blocks for high-Tc materials, devices, and networks.

Scrape-off layer tokamak plasma turbulence

NASA Astrophysics Data System (ADS)

Bisai, N.; Singh, R.; Kaw, P. K.

2012-05-01

Two-dimensional (2D) interchange turbulence in the scrape-off layer of tokamak plasmas and their subsequent contribution to anomalous plasma transport has been studied in recent years using electron continuity, current balance, and electron energy equations. In this paper, numerically it is demonstrated that the inclusion of ion energy equation in the simulation changes the nature of plasma turbulence. Finite ion temperature reduces floating potential by about 15% compared with the cold ion temperature approximation and also reduces the radial electric field. Rotation of plasma blobs at an angular velocity about 1.5×105 rad/s has been observed. It is found that blob rotation keeps plasma blob charge separation at an angular position with respect to the vertical direction that gives a generation of radial electric field. Plasma blobs with high electron temperature gradients can align the charge separation almost in the radial direction. Influence of high ion temperature and its gradient has been presented.

Magnetoresistance behavior in nanobulk assembled Bi2Se3 topological insulator

NASA Astrophysics Data System (ADS)

Bera, Sumit; Behera, P.; Mishra, A. K.; Krishnan, M.; Patidar, Manju Mishra; Singh, Durgesh; Venkatesh, R.; Phase, D. M.; Ganesan, V.

2018-05-01

Temperature and magnetic field dependent magnetoresistance (MR) including structural, morphological studies of Bi2Se3 nanoflower like structure synthesized by microwave assisted solvothermal method has been investigated. Powder X-ray diffraction (XRD) has confirmed the formation of single phase. Morphology of the material shows nanoflower kind of structures with edge to edge size of around 4 µm and such occurrences are quite high. The temperature dependent resistance invokes a metallic behavior up to a certain lower temperature, below which it follows -ln(T) behavior that has been elucidated in literature using electron-electron interaction and weak anti-localization effects. High temperature magnetoresistance is consistent with parabolic field dependence indicating a classical magnetoresistance in metals as a result of Lorenz force. In low temperature regime magnetoresistance as a function of magnetic field at different temperatures obeys power law near low field which indicates a three dimensional weak-antilocalization. A linear magnetoresistance at low temperature and high magnetic field shows the domination of surface state conduction.

Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics.

PubMed

Kim, Janghyuk; Oh, Sooyeoun; Mastro, Michael A; Kim, Jihyun

2016-06-21

This study demonstrated the exfoliation of a two-dimensional (2D) β-Ga2O3 nano-belt and subsequent processing into a thin film transistor structure. This mechanical exfoliation and transfer method produces β-Ga2O3 nano-belts with a pristine surface as well as a continuous defect-free interface with the SiO2/Si substrate. This β-Ga2O3 nano-belt based transistor displayed an on/off ratio that increased from approximately 10(4) to 10(7) over the operating temperature range of 20 °C to 250 °C. No electrical breakdown was observed in our measurements up to VDS = +40 V and VGS = -60 V between 25 °C and 250 °C. Additionally, the electrical characteristics were not degraded after a month-long storage in ambient air. The demonstration of high-temperature/high-voltage operation of quasi-2D β-Ga2O3 nano-belts contrasts with traditional 2D materials such as transition metal dichalcogenides that intrinsically have limited temperature and power operational envelopes owing to their narrow bandgap. This work motivates the application of 2D β-Ga2O3 to high power nano-electronic devices for harsh environments such as high temperature chemical sensors and photodetectors as well as the miniaturization of power circuits and cooling systems in nano-electronics.

Analysis tool and methodology design for electronic vibration stress understanding and prediction

NASA Astrophysics Data System (ADS)

Hsieh, Sheng-Jen; Crane, Robert L.; Sathish, Shamachary

2005-03-01

The objectives of this research were to (1) understand the impact of vibration on electronic components under ultrasound excitation; (2) model the thermal profile presented under vibration stress; and (3) predict stress level given a thermal profile of an electronic component. Research tasks included: (1) retrofit of current ultrasonic/infrared nondestructive testing system with sensory devices for temperature readings; (2) design of software tool to process images acquired from the ultrasonic/infrared system; (3) developing hypotheses and conducting experiments; and (4) modeling and evaluation of electronic vibration stress levels using a neural network model. Results suggest that (1) an ultrasonic/infrared system can be used to mimic short burst high vibration loads for electronics components; (2) temperature readings for electronic components under vibration stress are consistent and repeatable; (3) as stress load and excitation time increase, temperature differences also increase; (4) components that are subjected to a relatively high pre-stress load, followed by a normal operating load, have a higher heating rate and lower cooling rate. These findings are based on grayscale changes in images captured during experimentation. Discriminating variables and a neural network model were designed to predict stress levels given temperature and/or grayscale readings. Preliminary results suggest a 15.3% error when using grayscale change rate and 12.8% error when using average heating rate within the neural network model. Data were obtained from a high stress point (the corner) of the chip.

Evolution of High-Temperature Superconductivity from a Low-T_{c} Phase Tuned by Carrier Concentration in FeSe Thin Flakes.

PubMed

Lei, B; Cui, J H; Xiang, Z J; Shang, C; Wang, N Z; Ye, G J; Luo, X G; Wu, T; Sun, Z; Chen, X H

2016-02-19

We report the evolution of superconductivity in an FeSe thin flake with systematically regulated carrier concentrations by the liquid-gating technique. With electron doping tuned by the gate voltage, high-temperature superconductivity with an onset at 48 K can be achieved in an FeSe thin flake with T_{c} less than 10 K. This is the first time such high temperature superconductivity in FeSe is achieved without either an epitaxial interface or external pressure, and it definitely proves that the simple electron-doping process is able to induce high-temperature superconductivity with T_{c}^{onset} as high as 48 K in bulk FeSe. Intriguingly, our data also indicate that the superconductivity is suddenly changed from a low-T_{c} phase to a high-T_{c} phase with a Lifshitz transition at a certain carrier concentration. These results help to build a unified picture to understand the high-temperature superconductivity among all FeSe-derived superconductors and shed light on the further pursuit of a higher T_{c} in these materials.

Performance of the Micropower Voltage Reference ADR3430 Under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad

2011-01-01

Electronic systems designed for use in space exploration systems are expected to be exposed to harsh temperatures. For example, operation at cryogenic temperatures is anticipated in space missions such as polar craters of the moon (-223 C), James Webb Space Telescope (-236 C), Mars (-140 C), Europa (-223 C), Titan (-178 C), and other deep space probes away from the sun. Similarly, rovers and landers on the lunar surface, and deep space probes intended for the exploration of Venus are expected to encounter high temperature extremes. Electronics capable of operation under extreme temperatures would not only meet the requirements of future spacebased systems, but would also contribute to enhancing efficiency and improving reliability of these systems through the elimination of the thermal control elements that present electronics need for proper operation under the harsh environment of space. In this work, the performance of a micropower, high accuracy voltage reference was evaluated over a wide temperature range. The Analog Devices ADR3430 chip uses a patented voltage reference architecture to achieve high accuracy, low temperature coefficient, and low noise in a CMOS process [1]. The device combines two voltages of opposite temperature coefficients to create an output voltage that is almost independent of ambient temperature. It is rated for the industrial temperature range of -40 C to +125 C, and is ideal for use in low power precision data acquisition systems and in battery-powered devices. Table 1 shows some of the manufacturer s device specifications.

High-perveance W-band Sheet-beam Electron Gun Design

DTIC Science & Technology

2008-04-01

APR 2008 2. REPORT TYPE 3. DATES COVERED 00-00-2008 to 00-00-2008 4. TITLE AND SUBTITLE High -perveance W- band Sheet-beam Electron Gun Design 5a...8-98) Prescribed by ANSI Std Z39-18 10.1: High -perveance W- band Sheet-beam Electron Gun Design Khanh T. Nguyen1, John Pasour, Edward L. Wright1...effects due to cathode temperature are also included in the simulation. Keywords: Sheet beam; W- band ; electron gun; high perveance; amplifiers

Temperature Dependence of the Energy Levels of Methylammonium Lead Iodide Perovskite from First-Principles.

PubMed

Saidi, Wissam A; Poncé, Samuel; Monserrat, Bartomeu

2016-12-15

Environmental effects and intrinsic energy-loss processes lead to fluctuations in the operational temperature of solar cells, which can profoundly influence their power conversion efficiency. Here we determine from first-principles the effects of temperature on the band gap and band edges of the hybrid pervoskite CH 3 NH 3 PbI 3 by accounting for electron-phonon coupling and thermal expansion. From 290 to 380 K, the computed band gap change of 40 meV coincides with the experimental change of 30-40 meV. The calculation of electron-phonon coupling in CH 3 NH 3 PbI 3 is particularly intricate as the commonly used Allen-Heine-Cardona theory overestimates the band gap change with temperature, and excellent agreement with experiment is only obtained when including high-order terms in the electron-phonon interaction. We also find that spin-orbit coupling enhances the electron-phonon coupling strength but that the inclusion of nonlocal correlations using hybrid functionals has little effect. We reach similar conclusions in the metal-halide perovskite CsPbI 3 . Our results unambiguously confirm for the first time the importance of high-order terms in the electron-phonon coupling by direct comparison with experiment.

Microstructural studies of 35 degrees C copper Ni-Ti orthodontic wire and TEM confirmation of low-temperature martensite transformation.

PubMed

Brantley, William A; Guo, Wenhua; Clark, William A T; Iijima, Masahiro

2008-02-01

Previous temperature-modulated differential scanning calorimetry (TMDSC) study of nickel-titanium orthodontic wires revealed a large exothermic low-temperature peak that was attributed to transformation within martensitic NiTi. The purpose of this study was to use transmission electron microscopy (TEM) to verify this phase transformation in a clinically popular nickel-titanium wire, identify its mechanism and confirm other phase transformations found by TMDSC, and to provide detailed information about the microstructure of this wire. The 35 degrees C Copper nickel-titanium wire (Ormco) with cross-section dimensions of 0.016 in. x 0.022 in. used in the earlier TMDSC investigation was selected. Foils were prepared for TEM analyses by mechanical grinding, polishing, dimpling, ion milling and plasma cleaning. Standard bright-field and dark-field TEM images were obtained, along with convergent-beam electron diffraction patterns. A cryo-stage with the electron microscope (Phillips CM 200) permitted the specimen to be observed at -187, -45, and 50 degrees C, as well as at room temperature. Microstructures were also observed with an optical microscope and a scanning electron microscope. Room temperature microstructures had randomly oriented, elongated grains that were twinned. Electron diffraction patterns confirmed that phase transformations took place over temperature ranges previously found by TMDSC. TEM observations revealed a high dislocation density and fine-scale oxide particles, and that twinning is the mechanism for the low-temperature transformation in martensitic NiTi. TEM confirmed the low-temperature peak and other phase transformations observed by TMDSC, and revealed that twinning in martensite is the mechanism for the low-temperature peak. The high dislocation density and fine-scale oxide particles in the microstructure are the result of the wire manufacturing process.

Electron attachment to C{sub 2} fluorocarbon radicals at high temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shuman, Nicholas S.; Miller, Thomas M.; Viggiano, Albert A., E-mail: afrl.rvborgmailbox@kirtland.af.mil

Thermal electron attachment to the radical species C{sub 2}F{sub 3} and C{sub 2}F{sub 5} has been studied over the temperature range 300–890 K using the Variable Electron and Neutral Density Attachment Mass Spectrometry technique. Both radicals exclusively undergo dissociative attachment to yield F{sup −}. The rate constant for C{sub 2}F{sub 5} shows little dependence over the temperature range, remaining ∼4 × 10{sup −9} cm{sup 3} s{sup −1}. The rate constant for C{sub 2}F{sub 3} attachment rises steeply with temperature from 3 × 10{sup −11} cm{sup 3} s{sup −1} at 300 K to 1 × 10{sup −9} cm{sup 3} s{sup −1} at 890 K.more » The behaviors of both species at high temperature are in agreement with extrapolations previously made from data below 600 K using a recently developed kinetic modeling approach. Measurements were also made on C{sub 2}F{sub 3}Br and C{sub 2}F{sub 5}Br (used in this work as precursors to the radicals) over the same temperature range, and, for C{sub 2}F{sub 5}Br as a function of electron temperature. The attachment rate constants to both species rise with temperature following Arrhenius behavior. The attachment rate constant to C{sub 2}F{sub 5}Br falls with increasing electron temperature, in agreement with the kinetic modeling. The current data fall in line with past predictions of the kinetic modeling approach, again showing the utility of this simplified approach.« less

Electron energy distribution function in the divertor region of the COMPASS tokamak during neutral beam injection heating

NASA Astrophysics Data System (ADS)

Hasan, E.; Dimitrova, M.; Havlicek, J.; Mitošinková, K.; Stöckel, J.; Varju, J.; Popov, Tsv K.; Komm, M.; Dejarnac, R.; Hacek, P.; Panek, R.; the COMPASS Team

2018-02-01

This paper presents the results from swept probe measurements in the divertor region of the COMPASS tokamak in D-shaped, L-mode discharges, with toroidal magnetic field BT = 1.15 T, plasma current Ip = 180 kA and line-average electron densities varying from 2 to 8×1019 m-3. Using neutral beam injection heating, the electron energy distribution function is studied before and during the application of the beam. The current-voltage characteristics data are processed using the first-derivative probe technique. This technique allows one to evaluate the plasma potential and the real electron energy distribution function (respectively, the electron temperatures and densities). At the low average electron density of 2×1019 m-3, the electron energy distribution function is bi-Maxwellian with a low-energy electron population with temperatures 4-6 eV and a high-energy electron group 12-25 eV. As the line-average electron density is increased, the electron temperatures decrease. At line-average electron densities above 7×1019 m-3, the electron energy distribution function is found to be Maxwellian with a temperature of 6-8.5 eV. The effect of the neutral beam injection heating power in the divertor region is also studied.

A Versatile High-Vacuum Cryo-transfer System for Cryo-microscopy and Analytics

PubMed Central

Tacke, Sebastian; Krzyzanek, Vladislav; Nüsse, Harald; Wepf, Roger Albert; Klingauf, Jürgen; Reichelt, Rudolf

2016-01-01

Cryogenic microscopy methods have gained increasing popularity, as they offer an unaltered view on the architecture of biological specimens. As a prerequisite, samples must be handled under cryogenic conditions below their recrystallization temperature, and contamination during sample transfer and handling must be prevented. We present a high-vacuum cryo-transfer system that streamlines the entire handling of frozen-hydrated samples from the vitrification process to low temperature imaging for scanning transmission electron microscopy and transmission electron microscopy. A template for cryo-electron microscopy and multimodal cryo-imaging approaches with numerous sample transfer steps is presented. PMID:26910419

Deformation microstructures of Barre granite: An optical, Sem and Tem study

USGS Publications Warehouse

Schedl, A.; Kronenberg, A.K.; Tullis, J.

1986-01-01

New scanning electron microscope techniques have been developed for characterizing ductile deformation microstructures in felsic rocks. In addition, the thermomechanical history of the macroscopically undeformed Barre granite (Vermont, U.S.A.) has been reconstructed based on examination of deformation microstructures using optical microscopy, scanning electron microscopy, and transmission electron microscopy. The microstructures reveal three distinct events: 1. (1) a low-stress, high-temperature event that produced subgrains in feldspars, and subgrains and recrystallized grains in quartz; 2. (2) a high-stress, low-temperature event that produced a high dislocation density in quartz and feldspars; and 3. (3) a lowest-temperature event that produced cracks, oriented primarily along cleavage planes in feldspars, and parallel to the macroscopic rift in quartz. The first two events are believed to reflect various stages in the intrusion and cooling history of the pluton, and the last may be related to the last stages of cooling, or to later tectonism. ?? 1986.

Impact of impurities on zonal flow driven by trapped electron mode turbulence

NASA Astrophysics Data System (ADS)

Guo, Weixin; Wang, Lu; Zhuang, Ge

2017-12-01

The impact of impurities on the generation of zonal flow (ZF) driven by collisonless trapped electron mode turbulence in deuterium (D)-tritium (T) plasmas is investigated. An expression for ZF growth rate with impurities is derived by balancing the ZF potential shielded by polarization effects and the ZF modulated radial turbulent current. Then, it is shown that the maximum normalized ZF growth rate is reduced by the presence of fully ionized non-trace light impurities with relatively flat density profile, and slightly reduced by highly ionized trace tungsten, while the maximum normalized ZF growth rate can be enhanced by fully ionized non-trace light impurities with relatively steep density profile. In particular, the effects of high temperature helium from D-T reaction on ZF depend on the temperature ratio between electrons and high temperature helium. The possible relevance of our findings to recent experimental results and future burning plasmas is also discussed.

Improved Temperature Diagnostic for Non-Neutral Plasmas with Single-Electron Resolution

NASA Astrophysics Data System (ADS)

Shanman, Sabrina; Evans, Lenny; Fajans, Joel; Hunter, Eric; Nelson, Cheyenne; Sierra, Carlos; Wurtele, Jonathan

2016-10-01

Plasma temperature diagnostics in a Penning-Malmberg trap are essential for reliably obtaining cold, non-neutral plasmas. We have developed a setup for detecting the initial electrons that escape from a trapped pure electron plasma as the confining electrode potential is slowly reduced. The setup minimizes external noise by using a silicon photomultiplier to capture light emitted from an MCP-amplified phosphor screen. To take advantage of this enhanced resolution, we have developed a new plasma temperature diagnostic analysis procedure which takes discrete electron arrival times as input. We have run extensive simulations comparing this new discrete algorithm to our existing exponential fitting algorithm. These simulations are used to explore the behavior of these two temperature diagnostic procedures at low N and at high electronic noise. This work was supported by the DOE DE-FG02-06ER54904, and the NSF 1500538-PHY.

Ideal laser-beam propagation through high-temperature ignition Hohlraum plasmas.

PubMed

Froula, D H; Divol, L; Meezan, N B; Dixit, S; Moody, J D; Neumayer, P; Pollock, B B; Ross, J S; Glenzer, S H

2007-02-23

We demonstrate that a blue (3omega, 351 nm) laser beam with an intensity of 2 x 10(15) W cm(-2) propagates nearly within the original beam cone through a millimeter scale, T(e)=3.5 keV high density (n(e)=5 x 10(20) cm(-3)) plasma. The beam produced less than 1% total backscatter at these high temperatures and densities; the resulting transmission is greater than 90%. Scaling of the electron temperature in the plasma shows that the plasma becomes transparent for uniform electron temperatures above 3 keV. These results are consistent with linear theory thresholds for both filamentation and backscatter instabilities inferred from detailed hydrodynamic simulations. This provides a strong justification for current inertial confinement fusion designs to remain below these thresholds.

CO2 detection using polyethylenimine/starch functionalized AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Chang, C. Y.; Kang, B. S.; Wang, H. T.; Ren, F.; Wang, Y. L.; Pearton, S. J.; Dennis, D. M.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

2008-06-01

AlGaN /GaN high electron mobility transistors (HEMTs) functionalized with polyethylenimine/starch were used for detecting CO2 with a wide dynamic range of 0.9%-50% balanced with nitrogen at temperatures from 46to220°C. Higher detection sensitivity to CO2 gas was achieved at higher testing temperatures. At a fixed source-drain bias voltage of 0.5V, drain-source current of the functionalized HEMTs showed a sublinear correlation upon exposure to different CO2 concentrations at low temperature. The superlinear relationship was at high temperature. The sensor exhibited a reversible behavior and a repeatable current change of 32 and 47μA with the introduction of 28.57% and 37.5% CO2 at 108°C, respectively.

Densification of a-IGZO with low-temperature annealing for flexible electronics applications

NASA Astrophysics Data System (ADS)

Troughton, J. G.; Downs, P.; Price, R.; Atkinson, D.

2017-01-01

Amorphous InGaZnO (a-IGZO) thin-film transistors are a leading contender for active channel materials in next generation flat panel displays and flexible electronics. Improved electronic functionality has been linked to the increased density of a-IGZO, and while much work has looked at high-temperature processes, studies at temperatures compatible with flexible substrates are needed. Here, compositional and structural analyses show that short term, low-temperature annealing (<6 h) can increase the density of sputtered a-IGZO by up to 5.6% for temperatures below 300 °C, which is expected to improve the transistor performance, while annealing for longer times leads to a subsequent decrease in density due to oxygen absorption.

Research Area 4.1 Nano- and Bio-Electronics: Lester Eastman Conference on High-Performance Devices

DTIC Science & Technology

2017-06-02

temperatures higher than 1600 oC, in-situ generation of carbon vacancies overcomes the effect of carbon implantation, and results in a The authors would like...passivation layers are used in these measurements. B. High Temperature Oxidation The effect of high temperature oxidation treatment on carrier... Temperature Characteristics of In0.7 Ga0.3As PHEMTs ............................................................................................12 S‐W Son, J.H

Temperature management of photo cathodes at MAMI and MESA

NASA Astrophysics Data System (ADS)

Aulenbacher, K.; Friederich, S.; Tyukin, V.

2018-05-01

Production of highly polarized electron current is limited by cathode heating which leads to the destruction of the active layer. For the new electron accelerator MESA a more efficient solution for the cathode cooling problem is required, with the goal to achieve acceptable temperatures at an incident power of about 1 Watt. The current status of temperature management of photo cathodes at MAMI and MESA is presented.

Single Crystal Diamond Needle as Point Electron Source.

PubMed

Kleshch, Victor I; Purcell, Stephen T; Obraztsov, Alexander N

2016-10-12

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2-0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics.

Single Crystal Diamond Needle as Point Electron Source

NASA Astrophysics Data System (ADS)

Kleshch, Victor I.; Purcell, Stephen T.; Obraztsov, Alexander N.

2016-10-01

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2-0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics.

High temperature electronic excitation and ionization rates in gases

NASA Technical Reports Server (NTRS)

Hansen, Frederick

1991-01-01

The relaxation times for electronic excitation due to electron bombardment of atoms was found to be quite short, so that electron kinetic temperature (T sub e) and the electron excitation temperature (T asterisk) should equilibrate quickly whenever electrons are present. However, once equilibrium has been achieved, further energy to the excited electronic states and to the kinetic energy of free electrons must be fed in by collisions with heavy particles that cause vibrational and electronic state transitions. The rate coefficients for excitation of electronic states produced by heavy particle collision have not been well known. However, a relatively simple semi-classical theory has been developed here which is analytic up to the final integration over a Boltzmann distribution of collision energies; this integral can then be evaluated numerically by quadrature. Once the rate coefficients have been determined, the relaxation of electronic excitation energy can be evaluated and compared with the relaxation rates of vibrational excitation. Then the relative importance of these two factors, electronic excitation and vibrational excitation by heavy particle collision, on the transfer of energy to free electron motion, can be assessed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreno, Gilbert

The objective for this project is to develop thermal management strategies to enable efficient and high-temperature wide-bandgap (WBG)-based power electronic systems (e.g., emerging inverter and DC-DC converter). Device- and system-level thermal analyses are conducted to determine the thermal limitations of current automotive power modules under elevated device temperature conditions. Additionally, novel cooling concepts and material selection will be evaluated to enable high-temperature silicon and WBG devices in power electronics components. WBG devices (silicon carbide [SiC], gallium nitride [GaN]) promise to increase efficiency, but will be driven as hard as possible. This creates challenges for thermal management and reliability.

Superconducting active impedance converter

DOEpatents

Ginley, David S.; Hietala, Vincent M.; Martens, Jon S.

1993-01-01

A transimpedance amplifier for use with high temperature superconducting, other superconducting, and conventional semiconductor allows for appropriate signal amplification and impedance matching to processing electronics. The amplifier incorporates the superconducting flux flow transistor into a differential amplifier configuration which allows for operation over a wide temperature range, and is characterized by high gain, relatively low noise, and response times less than 200 picoseconds over at least a 10-80 K. temperature range. The invention is particularly useful when a signal derived from either far-IR focal plane detectors or from Josephson junctions is to be processed by higher signal/higher impedance electronics, such as conventional semiconductor technology.

Improving temperature monitoring in the vaccine cold chain at the periphery: an intervention study using a 30-day electronic refrigerator temperature logger (Fridge-tag).

PubMed

Kartoğlu, Umit; Nelaj, Erida; Maire, Denis

2010-05-28

This intervention study was conducted in Albania to establish the superiority of the Fridge-tag (30-day electronic refrigerator temperature logger) against thermometers. Intervention sites used Fridge-tag and a modified temperature control record sheet, while control sites continued with their routine operation with thermometers. All refrigerators in both groups were equipped with downloadable electronic data loggers to record temperatures for reference. Focus group sessions were conducted with involved staff to discuss temperature monitoring, Fridge-tag use and its user-friendliness. Significant discrepancies were observed between thermometer readings and the electronic data loggers in control sites, while all alarms from Fridge-tag were confirmed in the intervention group. Thermometers are not sufficient to monitor temperatures in refrigerators since they miss the great majority of low and high alarms. Fridge-tag has proven to be an effective tool in providing health workers with the information they need to take the necessary actions when there are refrigerator temperature variations. (c) 2010 Elsevier Ltd. All rights reserved.

Electron temperatures and densities in the venus ionosphere: pioneer venus orbiter electron temperature probe results.

PubMed

Brace, L H; Theis, R F; Krehbiel, J P; Nagy, A F; Donahue, T M; McElroy, M B; Pedersen, A

1979-02-23

Altitude profiles of electron temperature and density in the ionosphere of Venus have been obtained by the Pioneer Venus orbiter electron temperatutre probe. Elevated temperatutres observed at times of low solar wind flux exhibit height profiles that are consistent with a model in which less than 5 percent of the solar wind energy is deposited at the ionopause and is conducted downward through an unmagnetized ionosphere to the region below 200 kilomneters where electron cooling to the neutral atmosphere proceeds rapidly. When solar wind fluxes are higher, the electron temperatures and densities are highly structured and the ionopause moves to lower altitudes. The ionopause height in the late afternoon sector observed thus far varies so widely from day to (day that any height variation with solar zenith angle is not apparent in the observations. In the neighborhood of the ionopause, measuremnents of plasma temperatures and densities and magnetic field strength indicate that an induced magnetic barrier plays an important role in the pressure transfer between the solar wind and the ionosphere. The bow, shock is marked by a distinct increase in electron current collected by the instrument, a featutre that provides a convenient identification of the bow shock location.

Localized to itinerant transition of f electrons in ordered Ce films on W(110)

NASA Astrophysics Data System (ADS)

Chen, Q. Y.; Feng, W.; Xie, D. H.; Lai, X. C.; Zhu, X. G.; Huang, L.

2018-04-01

A key issue to understand the driving force and underlying physics in the isostructural γ -α transition in Cerium is the character of the 4 f states, whether it is localized or itinerant. Here the surface topography and electronic structure of the well-ordered Ce metal films on a W(110) substrate were investigated by using scanning tunneling microscopy, angle-resolved photoemission spectroscopy and density functional theory, and single-site dynamical mean-field theory calculations. Three nearly flat f bands can be observed, and a weakly dispersive quasiparticle band near the Fermi level has been directly observed at low temperature, indicating the hybridization between f electrons and conduction electrons in the low-temperature α phase. The hybridization strength becomes weaker upon increasing temperature, and the f electrons become almost fully localized at 300 K in the high-temperature γ phase. The observed localized-to-itinerant transition of the f electrons with decreasing temperature gives direct experimental proof for the changes of the 4 f character in the isostructural γ -α phase transition. Our results suggest that the character of the f electrons plays a crucial role during the γ -α phase transition.

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

PubMed Central

Reshchikov, M. A.; McNamara, J. D.; Toporkov, M.; Avrutin, V.; Morkoç, H.; Usikov, A.; Helava, H.; Makarov, Yu.

2016-01-01

Point defects in high-purity GaN layers grown by hydride vapor phase epitaxy are studied by steady-state and time-resolved photoluminescence (PL). The electron-capture coefficients for defects responsible for the dominant defect-related PL bands in this material are found. The capture coefficients for all the defects, except for the green luminescence (GL1) band, are independent of temperature. The electron-capture coefficient for the GL1 band significantly changes with temperature because the GL1 band is caused by an internal transition in the related defect, involving an excited state acting as a giant trap for electrons. By using the determined electron-capture coefficients, the concentration of free electrons can be found at different temperatures by a contactless method. A new classification system is suggested for defect-related PL bands in undoped GaN. PMID:27901025

Effect of High Pressure and Temperature on Structural, Thermodynamic and Thermoelectric Properties of Quaternary CoFeCrAl Alloy

NASA Astrophysics Data System (ADS)

Bhat, Tahir Mohiuddin; Gupta, Dinesh C.

2018-03-01

Employing first-principles based on density functional theory we have investigated the structural, magneto-electronic, thermoelectric and thermodynamic properties of quaternary Heusler alloy CoFeCrAl. Electronic band structure displays that CoFeCrAl is an indirect band gap semiconductor in spin-down state with the band gap value of 0.65 eV. Elastic constants reveal CoFeCrAl is a mechanically stable structure having a Debye temperature of 648 K along with a high melting temperature (2130 K). The thermoelectric properties in the temperature range 50-800 K have been calculated. CoFeCrAl possesses a high Seebeck coefficient of - 46 μV/K at room temperature along with the huge power factor of ˜ 4.8 (1012 μW cm-1 K-2 s-1) which maximizes the figure-of-merit up to ˜ 0.75 at 800 K temperature and suggesting CoFeCrAl as potential thermoelectric material. The effect of high pressure and high temperature on the thermal expansion, Grüneisen parameter and heat capacity were also studied by using the quasi-harmonic Debye model.

Low temperature synthesis of coiled carbon nanotubes and their magnetic properties

NASA Astrophysics Data System (ADS)

Krishna, Vemula Mohana; Somanathan, T.; Manikandan, E.

2018-04-01

In this paper, coiled like structure of carbon nanotubes (c-CNTs) have been effectively grown on bi-metal substituted α-alumina nanoparticles catalyst by chemical vapor deposition (CVD) system. Highly graphitized and dense bundles of carbon product were attained at a low temperature of 550 °C. The coiled carbon nanostructures in very longer lengths were noticed by field emission scanning electron microscope (FESEM) observation. Furthermore, high purity material was achieved, which correlates the energy dispersive x-ray spectroscopy (EDX) analysis. High resolution transmission electron microscope (HRTEM) revealed the diameter and graphitization of coiled structures. The superparamagnetic like behavior was observed at room temperature for the as-synthesized product, which was found by VSM investigation.

Observations of electron vortex magnetic holes and related wave-particle interactions in the turbulent magnetosheath

NASA Astrophysics Data System (ADS)

Huang, S.; Sahraoui, F.; Yuan, Z.; He, J.; Zhao, J.; Du, J.; Le Contel, O.; Wang, X.; Deng, X.; Fu, H.; Zhou, M.; Shi, Q.; Breuillard, H.; Pang, Y.; Yu, X.; Wang, D.

2017-12-01

Magnetic hole is characterized by a magnetic depression, a density peak, a total electron temperature increase (with a parallel temperature decrease but a perpendicular temperature increase), and strong currents carried by the electrons. The current has a dip in the core region of the magnetic hole and a peak in the outer region of the magnetic hole. There is an enhancement in the perpendicular electron fluxes at 90° pitch angles inside the magnetic hole, implying that the electrons are trapped within it. The variations of the electron velocity components Vem and Ven suggest that an electron vortex is formed by trapping electrons inside the magnetic hole in the circular cross-section. These observations demonstrate the existence of a new type of coherent structures behaving as an electron vortex magnetic hole in turbulent space plasmas as predicted by recent kinetic simulations. We perform a statistically study using high time solution data from the MMS mission. The magnetic holes with short duration (i.e., < 0.5 s) have their cross section smaller than the ion gyro-radius. Superposed epoch analysis of all events reveals that an increase in the electron density and total temperature, significantly increase (resp. decrease) the electron perpendicular (resp. parallel) temperature, and an electron vortex inside the holes. Electron fluxes at 90° pitch angles with selective energies increase in the KSMHs, are trapped inside KSMHs and form the electron vortex due to their collective motion. All these features are consistent with the electron vortex magnetic holes obtained in 2D and 3D particle-in-cell simulations, indicating that the observed the magnetic holes seem to be best explained as electron vortex magnetic holes. It is furthermore shown that the magnetic holes are likely to heat and accelerate the electrons. We also investigate the coupling between whistler waves and electron vortex magnetic holes. These whistler waves can be locally generated inside electron vortex magnetic holes by electron temperature anisotropic instability.

Temperature relaxation in supernova remnants, revisited

NASA Technical Reports Server (NTRS)

Itoh, H.

1984-01-01

Some supernova remnants are expanding into a partially neutral medium. The neutral atoms which are engulfed by the fast blast shock are collisionally ionized to eject low-energy secondary electrons. Calculations are conducted of the temperature relaxation through Coulomb collisions among the secondary electrons, the shocked electrons, and the ions, assuming that the three species have Maxwellian velocity distributions. The results are applied to a self-similar blast wave. If the efficiency of collisionless electron heating at the shock front is high in young remnants such as Tycho, the secondary electrons may be much cooler than both the shocked electrons and the ions. In this case, the emergent X-ray continuum spectrum will have a two-temperature, or a power-law, appearance. This effect may have been observed in the bright rim of the remnant of SN 1006.

The structure of high-temperature solar flare plasma in non-thermal flare models

NASA Technical Reports Server (NTRS)

Emslie, A. G.

1985-01-01

Analytic differential emission measure distributions have been derived for coronal plasma in flare loops heated both by collisions of high-energy suprathermal electrons with background plasma, and by ohmic heating by the beam-normalizing return current. For low densities, reverse current heating predominates, while for higher densities collisional heating predominates. There is thus a minimum peak temperature in an electron-heated loop. In contrast to previous approximate analyses, it is found that a stable reverse current can dominate the heating rate in a flare loop, especially in the low corona. Two 'scaling laws' are found which relate the peak temperature in the loop to the suprathermal electron flux. These laws are testable observationally and constitute a new diagnostic procedure for examining modes of energy transport in flaring loops.

High time resolved electron temperature measurements by using the multi-pass Thomson scattering system in GAMMA 10/PDX.

PubMed

Yoshikawa, Masayuki; Yasuhara, Ryo; Ohta, Koichi; Chikatsu, Masayuki; Shima, Yoriko; Kohagura, Junko; Sakamoto, Mizuki; Nakashima, Yousuke; Imai, Tsuyoshi; Ichimura, Makoto; Yamada, Ichihiro; Funaba, Hisamichi; Minami, Takashi

2016-11-01

High time resolved electron temperature measurements are useful for fluctuation study. A multi-pass Thomson scattering (MPTS) system is proposed for the improvement of both increasing the TS signal intensity and time resolution. The MPTS system in GAMMA 10/PDX has been constructed for enhancing the Thomson scattered signals for the improvement of measurement accuracy. The MPTS system has a polarization-based configuration with an image relaying system. We optimized the image relaying optics for improving the multi-pass laser confinement and obtaining the stable MPTS signals over ten passing TS signals. The integrated MPTS signals increased about five times larger than that in the single pass system. Finally, time dependent electron temperatures were obtained in MHz sampling.

High temperature electronics applications in space exploration

NASA Technical Reports Server (NTRS)

Jurgens, R. F.

1981-01-01

The extension of the range of operating temperatures of electronic components and systems for planetary exploration is examined. In particular, missions which utilize balloon-borne instruments to study the Venusian and Jovian atmospheres are discussed. Semiconductor development and devices including power sources, ultrastable oscillators, transmitters, antennas, electromechanical devices, and deployment systems are addressed.

Hot electron energy relaxation in lattice-matched InAlN/AlN/GaN heterostructures: The sum rules for electron-phonon interactions and hot-phonon effect

NASA Astrophysics Data System (ADS)

Zhang, J.-Z.; Dyson, A.; Ridley, B. K.

2015-01-01

Using the dielectric continuum (DC) and three-dimensional phonon (3DP) models, energy relaxation (ER) of the hot electrons in the quasi-two-dimensional channel of lattice-matched InAlN/AlN/GaN heterostructures is studied theoretically, taking into account non-equilibrium polar optical phonons, electron degeneracy, and screening from the mobile electrons. The electron power dissipation (PD) and ER time due to both half-space and interface phonons are calculated as functions of the electron temperature Te using a variety of phonon lifetime values from experiment, and then compared with those evaluated by the 3DP model. Thereby, particular attention is paid to examination of the 3DP model to use for the hot-electron relaxation study. The 3DP model yields very close results to the DC model: With no hot phonons or screening, the power loss calculated from the 3DP model is 5% smaller than the DC power dissipation, whereas slightly larger 3DP power loss (by less than 4% with a phonon lifetime from 0.1 to 1 ps) is obtained throughout the electron temperature range from room temperature to 2500 K after including both the hot-phonon effect (HPE) and screening. Very close results are obtained also for ER time with the two phonon models (within a 5% of deviation). However, the 3DP model is found to underestimate the HPE by 9%. The Mori-Ando sum rule is restored by which it is proved that the PD values obtained from the DC and 3DP models are in general different in the spontaneous phonon emission process, except when scattering with interface phonons is sufficiently weak, or when the degenerate modes condition is imposed, which is also consistent with Register's scattering rate sum rule. The discrepancy between the DC and 3DP results is found to be caused by how much the high-energy interface phonons contribute to the ER: their contribution is enhanced in the spontaneous emission process but is dramatically reduced after including the HPE. Our calculation with both phonon models has obtained a great fall in ER time at low electron temperatures (Te < 750 K) and slow decrease at the high temperatures with the use of decreasing phonon lifetime with Te. The calculated temperature dependence of the relaxation time and the high-temperature relaxation time ˜0.09 ps are in good agreement with experimental results.

A hot tip: imaging phenomena using in situ multi-stimulus probes at high temperatures

NASA Astrophysics Data System (ADS)

Nonnenmann, Stephen S.

2016-02-01

Accurate high temperature characterization of materials remains a critical challenge to the continued advancement of various important energy, nuclear, electronic, and aerospace applications. Future experimental studies must assist these communities to progress past empiricism and derive deliberate, predictable designs of material classes functioning within active, extreme environments. Successful realization of systems ranging from fuel cells and batteries to electromechanical nanogenerators and turbines requires a dynamic understanding of the excitation, surface-mediated, and charge transfer phenomena which occur at heterophase interfaces (i.e. vapor-solid, liquid-solid, solid-solid) and impact overall performance. Advancing these frontiers therefore necessitates in situ (operando) characterization methods capable of resolving, both spatially and functionally, the coherence between these complex, collective excitations, and their respective response dynamics, through studies within the operating regime. This review highlights recent developments in scanning probe microscopy in performing in situ imaging at high elevated temperatures. The influence of and evolution from vacuum-based electron and tunneling microscopy are briefly summarized and discussed. The scope includes the use of high temperature imaging to directly observe critical phase transition, electronic, and electrochemical behavior under dynamic temperature settings, thus providing key physical parameters. Finally, both challenges and directions in combined instrumentation are proposed and discussed towards the end.

Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n-channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study

NASA Astrophysics Data System (ADS)

Maitra, Kingsuk; Frank, Martin M.; Narayanan, Vijay; Misra, Veena; Cartier, Eduard A.

2007-12-01

We report low temperature (40-300 K) electron mobility measurements on aggressively scaled [equivalent oxide thickness (EOT)=1 nm] n-channel metal-oxide-semiconductor field effect transistors (nMOSFETs) with HfO2 gate dielectrics and metal gate electrodes (TiN). A comparison is made with conventional nMOSFETs containing HfO2 with polycrystalline Si (poly-Si) gate electrodes. No substantial change in the temperature acceleration factor is observed when poly-Si is replaced with a metal gate, showing that soft optical phonons are not significantly screened by metal gates. A qualitative argument based on an analogy between remote phonon scattering and high-resolution electron energy-loss spectroscopy (HREELS) is provided to explain the underlying physics of the observed phenomenon. It is also shown that soft optical phonon scattering is strongly damped by thin SiO2 interface layers, such that room temperature electron mobility values at EOT=1 nm become competitive with values measured in nMOSFETs with SiON gate dielectrics used in current high performance processors.

Sensing Properties of a Novel Temperature Sensor Based on Field Assisted Thermal Emission.

PubMed

Pan, Zhigang; Zhang, Yong; Cheng, Zhenzhen; Tong, Jiaming; Chen, Qiyu; Zhang, Jianpeng; Zhang, Jiaxiang; Li, Xin; Li, Yunjia

2017-02-27

The existing temperature sensors using carbon nanotubes (CNTs) are limited by low sensitivity, complicated processes, or dependence on microscopy to observe the experimental results. Here we report the fabrication and successful testing of an ionization temperature sensor featuring non-self-sustaining discharge. The sharp tips of nanotubes generate high electric fields at relatively low voltages, lowering the work function of electrons emitted by CNTs, and thereby enabling the safe operation of such sensors. Due to the temperature effect on the electron emission of CNTs, the collecting current exhibited an exponential increase with temperature rising from 20 °C to 100 °C. Additionally, a higher temperature coefficient of 0.04 K -1 was obtained at 24 V voltage applied on the extracting electrode, higher than the values of other reported CNT-based temperature sensors. The triple-electrode ionization temperature sensor is easy to fabricate and converts the temperature change directly into an electrical signal. It shows a high temperature coefficient and good application potential.

Sensing Properties of a Novel Temperature Sensor Based on Field Assisted Thermal Emission

PubMed Central

Pan, Zhigang; Zhang, Yong; Cheng, Zhenzhen; Tong, Jiaming; Chen, Qiyu; Zhang, Jianpeng; Zhang, Jiaxiang; Li, Xin; Li, Yunjia

2017-01-01

The existing temperature sensors using carbon nanotubes (CNTs) are limited by low sensitivity, complicated processes, or dependence on microscopy to observe the experimental results. Here we report the fabrication and successful testing of an ionization temperature sensor featuring non-self-sustaining discharge. The sharp tips of nanotubes generate high electric fields at relatively low voltages, lowering the work function of electrons emitted by CNTs, and thereby enabling the safe operation of such sensors. Due to the temperature effect on the electron emission of CNTs, the collecting current exhibited an exponential increase with temperature rising from 20 °C to 100 °C. Additionally, a higher temperature coefficient of 0.04 K−1 was obtained at 24 V voltage applied on the extracting electrode, higher than the values of other reported CNT-based temperature sensors. The triple-electrode ionization temperature sensor is easy to fabricate and converts the temperature change directly into an electrical signal. It shows a high temperature coefficient and good application potential. PMID:28264427

Power System for Venus Surface Exploration

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.; Mellott, Kenneth

2002-01-01

A radioisotope power and cooling system is designed to provide electrical power for a probe operating on the surface of Venus. Most foreseeable electronics devices and sensors cannot operate at the 450 C ambient surface temperature of Venus. Because the mission duration is substantially long and the use of thermal mass to maintain an operable temperature range is likely impractical, some type of active refrigeration may be required to keep electronic components at a temperature below ambient. The fundamental cooling parameters are the cold sink temperature, the hot sink temperature, and the amount of heat to be removed. In this instance, it is anticipated that electronics would have a nominal operating temperature of 300 C. Due to the highly thermal convective nature of the high-density (90 bar CO2) atmosphere, the hot sink temperature was assumed to be 50 C, which provided a 500 C temperature of the cooler's heat rejecter to the ambient atmosphere. The majority of the heat load on the cooler is from the high temperature ambient surface environment on Venus, with a small contribution of heat generation from electronics and sensors. Both thermoelectric (RTG) and dynamic power conversion systems were analyzed, based on use of a standard isotope (General-purpose heat source, or GPHS) brick. For the radioisotope Stirling power converter configuration designed, the Sage model predicts a thermodynamic power output capacity of 478.1 watts, which slightly exceeds the required 469.1 watts. The hot sink temperature is 1200 C, and the cold sink temperature is 500 C. The required heat input is 1740 watts. This gives a thermodynamic efficiency of 27.48 %. It is estimated that the mechanical efficiency of the power converter design is on the order of 85 %, based on experimental measurements taken from 500-watt power class, laboratory-tested Stirling engines. The overall efficiency is calculated to be 23.36 %. The mass of the power converter is estimated at approximately 21.6 kg. Additional information is included in the original extended abstract.

[The Spectral Analysis of Laser-Induced Plasma in Laser Welding with Various Protecting Conditions].

PubMed

Du, Xiao; Yang, Li-jun; Liu, Tong; Jiao, Jiao; Wang, Hui-chao

2016-01-01

The shielding gas plays an important role in the laser welding process and the variation of the protecting conditions has an obvious effect on the welding quality. This paper studied the influence of the change of protecting conditions on the parameters of laser-induced plasma such as electron temperature and electron density during the laser welding process by designing some experiments of reducing the shielding gas flow rate step by step and simulating the adverse conditions possibly occurring in the actual Nd : YAG laser welding process. The laser-induced plasma was detected by a fiber spectrometer to get the spectral data. So the electron temperature of laser-induced plasma was calculated by using the method of relative spectral intensity and the electron density by the Stark Broadening. The results indicated that the variation of protecting conditions had an important effect on the electron temperature and the electron density in the laser welding. When the protecting conditions were changed, the average electron temperature and the average electron density of the laser-induced plasma would change, so did their fluctuation range. When the weld was in a good protecting condition, the electron temperature, the electron density and their fluctuation were all low. Otherwise, the values would be high. These characteristics would have contribution to monitoring the process of laser welding.

The structure and properties of boron carbide ceramics modified by high-current pulsed electron-beam

NASA Astrophysics Data System (ADS)

Ivanov, Yuri; Tolkachev, Oleg; Petyukevich, Maria; Teresov, Anton; Ivanova, Olga; Ikonnikova, Irina; Polisadova, Valentina

2016-01-01

The present work is devoted to numerical simulation of temperature fields and the analysis of structural and strength properties of the samples surface layer of boron carbide ceramics treated by the high-current pulsed electron-beam of the submillisecond duration. The samples made of sintered boron carbide ceramics are used in these investigations. The problem of calculating the temperature field is reduced to solving the thermal conductivity equation. The electron beam density ranges between 8…30 J/cm2, while the pulse durations are 100…200 μs in numerical modelling. The results of modelling the temperature field allowed ascertaining the threshold parameters of the electron beam, such as energy density and pulse duration. The electron beam irradiation is accompanied by the structural modification of the surface layer of boron carbide ceramics either in the single-phase (liquid or solid) or two-phase (solid-liquid) states. The sample surface of boron carbide ceramics is treated under the two-phase state (solid-liquid) conditions of the structural modification. The surface layer is modified by the high-current pulsed electron-beam produced by SOLO installation at the Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences, Tomsk, Russia. The elemental composition and the defect structure of the modified surface layer are analyzed by the optical instrument, scanning electron and transmission electron microscopes. Mechanical properties of the modified layer are determined measuring its hardness and crack resistance. Research results show that the melting and subsequent rapid solidification of the surface layer lead to such phenomena as fragmentation due to a crack network, grain size reduction, formation of the sub-grained structure due to mechanical twinning, and increase of hardness and crack resistance.

Photosynthetic temperature responses of tree species in Rwanda: evidence of pronounced negative effects of high temperature in montane rainforest climax species

NASA Astrophysics Data System (ADS)

Vårhammar, Angelica; Wallin, Göran; McLean, Christopher M.; Dusenge, Mirindi Eric; Medlyn, Belinda E.; Hasper, Thomas B.; Nsabimana, Donat; Uddling, Johan

2015-04-01

The sensitivity of photosynthetic metabolism to temperature has been identified as a key uncertainty for projecting the magnitude of the terrestrial feedback on future climate change. While temperature responses of photosynthetic capacities have been comparatively well investigated in temperate species, the responses of tropical tree species remain unexplored. We compared the responses of seedlings of native cold-adapted tropical montane rainforest tree species to exotic warm-adapted plantation species, all growing in an intermediate temperature common garden in Rwanda. Leaf gas exchange responses to CO2 at different temperatures (20 - 40 C) were used to assess the temperature responses of biochemical photosynthetic capacities. Analyses revealed a lower optimum temperature for photosynthetic electron transport rates than for Rubisco carboxylation rates, along with lower electron transport optima in the native cold-adapted than in the exotic warm-adapted species. The photosynthetic optimum temperatures were generally exceeded by daytime peak leaf temperatures, in particular in the native montane rainforest climax species. This study thus provides evidence of pronounced negative effects of high temperature in tropical trees and indicates high susceptibility of montane rainforest climax species to future global warming. (Reference: New Phytologist, in press)

Transport coefficients and heat fluxes in non-equilibrium high-temperature flows with electronic excitation

NASA Astrophysics Data System (ADS)

Istomin, V. A.; Kustova, E. V.

2017-02-01

The influence of electronic excitation on transport processes in non-equilibrium high-temperature ionized mixture flows is studied. Two five-component mixtures, N 2 / N2 + / N / N + / e - and O 2 / O2 + / O / O + / e - , are considered taking into account the electronic degrees of freedom for atomic species as well as the rotational-vibrational-electronic degrees of freedom for molecular species, both neutral and ionized. Using the modified Chapman-Enskog method, the transport coefficients (thermal conductivity, shear viscosity and bulk viscosity, diffusion and thermal diffusion) are calculated in the temperature range 500-50 000 K. Thermal conductivity and bulk viscosity coefficients are strongly affected by electronic states, especially for neutral atomic species. Shear viscosity, diffusion, and thermal diffusion coefficients are not sensible to electronic excitation if the size of excited states is assumed to be constant. The limits of applicability for the Stokes relation are discussed; at high temperatures, this relation is violated not only for molecular species but also for electronically excited atomic gases. Two test cases of strongly non-equilibrium flows behind plane shock waves corresponding to the spacecraft re-entry (Hermes and Fire II) are simulated numerically. Fluid-dynamic variables and heat fluxes are evaluated in gases with electronic excitation. In inviscid flows without chemical-radiative coupling, the flow-field is weakly affected by electronic states; however, in viscous flows, their influence can be more important, in particular, on the convective heat flux. The contribution of different dissipative processes to the heat transfer is evaluated as well as the effect of reaction rate coefficients. The competition of diffusion and heat conduction processes reduces the overall effect of electronic excitation on the convective heating, especially for the Fire II test case. It is shown that reliable models of chemical reaction rates are of great importance for accurate predictions of the fluid dynamic variables and heat fluxes.

Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

NASA Astrophysics Data System (ADS)

Sun, Huarui; Bajo, Miguel Montes; Uren, Michael J.; Kuball, Martin

2015-01-01

Gate leakage degradation of AlGaN/GaN high electron mobility transistors under OFF-state stress is investigated using a combination of electrical, optical, and surface morphology characterizations. The generation of leakage "hot spots" at the edge of the gate is found to be strongly temperature accelerated. The time for the formation of each failure site follows a Weibull distribution with a shape parameter in the range of 0.7-0.9 from room temperature up to 120 °C. The average leakage per failure site is only weakly temperature dependent. The stress-induced structural degradation at the leakage sites exhibits a temperature dependence in the surface morphology, which is consistent with a surface defect generation process involving temperature-associated changes in the breakdown sites.

Packaging Technologies for 500 C SiC Electronics and Sensors: Challenges in Material Science and Technology

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Neudeck, Philip G.; Behelm, Glenn M.; Spry, David J.; Meredith, Roger D.; Hunter, Gary W.

2015-01-01

This paper presents ceramic substrates and thick-film metallization based packaging technologies in development for 500C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550C. The 96 alumina packaging system composed of chip-level packages and PCBs has been successfully tested with high temperature SiC discrete transistor devices at 500C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC junction field-effect-transistor (JFET) with a packaging system composed of a 96 alumina chip-level package and an alumina printed circuit board was tested on low earth orbit for eighteen months via a NASA International Space Station experiment. In addition to packaging systems for electronics, a spark-plug type sensor package based on this high temperature interconnection system for high temperature SiC capacitive pressure sensors was also developed and tested. In order to further significantly improve the performance of packaging system for higher packaging density, higher operation frequency, power rating, and even higher temperatures, some fundamental material challenges must be addressed. This presentation will discuss previous development and some of the challenges in material science (technology) to improve high temperature dielectrics for packaging applications.

Modeling and design of radiative hydrodynamic experiments with X-ray Thomson Scattering measurements on NIF

NASA Astrophysics Data System (ADS)

Ma, K. H.; Lefevre, H. J.; Belancourt, P. X.; MacDonald, M. J.; Doeppner, T.; Keiter, P. A.; Kuranz, C. C.; Johnsen, E.

2017-10-01

Recent experiments at the National Ignition Facility studied the effect of radiation on shock-driven hydrodynamic instability growth. X-ray radiography images from these experiments indicate that perturbation growth is lower in highly radiative shocks compared to shocks with negligible radiation flux. The reduction in instability growth is attributed to ablation from higher temperatures in the foam for highly radiative shocks. The proposed design implements the X-ray Thomson Scattering (XRTS) technique in the radiative shock tube platform to measure electron temperatures and densities in the shocked foam. We model these experiments with CRASH, an Eulerian radiation hydrodynamics code with block-adaptive mesh refinement, multi-group radiation transport and electron heat conduction. Simulations are presented with SiO2 and carbon foams for both the high temperature, radiative shock and the low-temperature, hydrodynamic shock cases. Calculations from CRASH give estimations for shock speed, electron temperature, effective ionization, and other quantities necessary for designing the XRTS diagnostic measurement. This work is funded by the LLNL under subcontract B614207, and was performed under the auspices of the U.S. DOE by LLNL under Contract No. DE-AC52-07NA27344.

Temperature dependence of low-energy positron-induced Auger-electron emission: Evidence for high surface sensitivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mayer, R.; Schwab, A.; Weiss, A.

1990-08-01

We report the experimental observation of the temperature dependence of the intensity of low-energy positron-annihilation-induced Auger-electron emission spectroscopy (PAES) from Cu(100). These studies show that the mechanism for stimulating Auger electrons is found to compete with positronium (Ps) emission from a surface. The positrons that induce Auger-electron emission therefore originate from the same surface state from which Ps is thermally desorbed. Hence, PAES should have higher surface sensitivity ({approximately}1 A) relative to conventional methods for generating Auger-electron emission from surfaces ({approximately}5--10 A).

High temperature electronic gain device

DOEpatents

McCormick, J. Byron; Depp, Steven W.; Hamilton, Douglas J.; Kerwin, William J.

1979-01-01

An integrated thermionic device suitable for use in high temperature, high radiation environments. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube.

High temperature dielectric studies of indium-substituted NiCuZn nanoferrites

NASA Astrophysics Data System (ADS)

Hashim, Mohd.; Raghasudha, M.; Shah, Jyoti; Shirsath, Sagar E.; Ravinder, D.; Kumar, Shalendra; Meena, Sher Singh; Bhatt, Pramod; Alimuddin; Kumar, Ravi; Kotnala, R. K.

2018-01-01

In this study, indium (In3+)-substituted NiCuZn nanostructured ceramic ferrites with a chemical composition of Ni0.5Cu0.25Zn0.25Fe2-xInxO4 (0.0 ≤ x ≤ 0.5) were prepared by chemical synthesis involving sol-gel chemistry. Single phased cubic spinel structure materials were prepared successfully according to X-ray diffraction and transmission electron microscopy analyses. The dielectric properties of the prepared ferrites were measured using an LCR HiTester at temperatures ranging from room temperature to 300 °C at different frequencies from 102 Hz to 5 × 106 Hz. The variations in the dielectric parameters ε‧ and (tanδ) with temperature demonstrated the frequency- and temperature-dependent characteristics due to electron hopping between the ions. The materials had low dielectric loss values in the high frequency range at all temperatures, which makes them suitable for high frequency microwave applications. A qualitative explanation is provided for the dependences of the dielectric constant and dielectric loss tangent on the frequency, temperature, and composition. Mӧssbauer spectroscopy was employed at room temperature to characterize the magnetic behavior.

SiC Integrated Circuits for Power Device Drivers Able to Operate in Harsh Environments

NASA Astrophysics Data System (ADS)

Godignon, P.; Alexandru, M.; Banu, V.; Montserrat, J.; Jorda, X.; Vellvehi, M.; Schmidt, B.; Michel, P.; Millan, J.

2014-08-01

The currently developed SiC electronic devices are more robust to high temperature operation and radiation exposure damage than correspondingly rated Si ones. In order to integrate the existent SiC high power and high temperature electronics into more complex systems, a SiC integrated circuit (IC) technology capable of operation at temperatures substantially above the conventional ones is required. Therefore, this paper is a step towards the development of ICs-control electronics that have to attend the harsh environment power applications. Concretely, we present the development of SiC MESFET-based digital circuitry, able to integrate gate driver for SiC power devices. Furthermore, a planar lateral power MESFET is developed with the aim of its co-integration on the same chip with the previously mentioned SiC digital ICs technology. And finally, experimental results on SiC Schottky-gated devices irradiated with protons and electrons are presented. This development is based on the Tungsten-Schottky interface technology used for the fabrication of stable SiC Schottky diodes for the European Space Agency Mission BepiColombo.

Electron Attachment to C2 Fluorocarbon Radicals at High Temperature (Postprint)

DTIC Science & Technology

2016-01-28

Vehicles Directorate 3550 Aberdeen Avenue SE Kirtland AFB, NM 87117-5776 8. PERFORMING ORGANIZATION REPORT NUMBER AFRL -RV-PS-TP-2015-0014 9...cy AFRL /RVIL Kirtland AFB, NM 87117-5776 2 cys Official Record Copy AFRL /RVBXT/Dr. Raymond Bemish 1 cy Approved for public release; distribution... AFRL -RV-PS- TP-2015-0014 AFRL -RV-PS- TP-2015-0014 ELECTRON ATTACHMENT TO C2 FLUOROCARBON RADICALS AT HIGH TEMPERATURE (POSTPRINT) Nicholas S

High-energy electron-induced damage production at room temperature in aluminum-doped silicon

NASA Technical Reports Server (NTRS)

Corbett, J. W.; Cheng, L. J.; Jaworowski, A.; Karins, J. P.; Lee, Y. H.; Lindstroem, L.; Mooney, P. M.; Oehrlen, G.; Wang, K. L.

1979-01-01

DLTS and EPR measurements are reported on aluminum-doped silicon that was irradiated at room temperature with high-energy electrons. Comparisons are made to comparable experiments on boron-doped silicon. Many of the same defects observed in boron-doped silicon are also observed in aluminum-doped silicon, but several others were not observed, including the aluminum interstitial and aluminum-associated defects. Damage production modeling, including the dependence on aluminum concentration, is presented.

Cold and warm electrons at comet 67P/Churyumov-Gerasimenko

NASA Astrophysics Data System (ADS)

Eriksson, A. I.; Engelhardt, I. A. D.; André, M.; Boström, R.; Edberg, N. J. T.; Johansson, F. L.; Odelstad, E.; Vigren, E.; Wahlund, J.-E.; Henri, P.; Lebreton, J.-P.; Miloch, W. J.; Paulsson, J. J. P.; Simon Wedlund, C.; Yang, L.; Karlsson, T.; Jarvinen, R.; Broiles, T.; Mandt, K.; Carr, C. M.; Galand, M.; Nilsson, H.; Norberg, C.

2017-09-01

Context. Strong electron cooling on the neutral gas in cometary comae has been predicted for a long time, but actual measurements of low electron temperature are scarce. Aims: Our aim is to demonstrate the existence of cold electrons in the inner coma of comet 67P/Churyumov-Gerasimenko and show filamentation of this plasma. Methods: In situ measurements of plasma density, electron temperature and spacecraft potential were carried out by the Rosetta Langmuir probe instrument, LAP. We also performed analytical modelling of the expanding two-temperature electron gas. Results: LAP data acquired within a few hundred km from the nucleus are dominated by a warm component with electron temperature typically 5-10 eV at all heliocentric distances covered (1.25 to 3.83 AU). A cold component, with temperature no higher than about 0.1 eV, appears in the data as short (few to few tens of seconds) pulses of high probe current, indicating local enhancement of plasma density as well as a decrease in electron temperature. These pulses first appeared around 3 AU and were seen for longer periods close to perihelion. The general pattern of pulse appearance follows that of neutral gas and plasma density. We have not identified any periods with only cold electrons present. The electron flux to Rosetta was always dominated by higher energies, driving the spacecraft potential to order - 10 V. Conclusions: The warm (5-10 eV) electron population observed throughout the mission is interpreted as electrons retaining the energy they obtained when released in the ionisation process. The sometimes observed cold populations with electron temperatures below 0.1 eV verify collisional cooling in the coma. The cold electrons were only observed together with the warm population. The general appearance of the cold population appears to be consistent with a Haser-like model, implicitly supporting also the coupling of ions to the neutral gas. The expanding cold plasma is unstable, forming filaments that we observe as pulses.

Electronic and Interfacial Properties of PD/6H-SiC Schottky Diode Gas Sensors

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Bansal, Gaurav; Petit, Jeremy B.; Knight, Dak; Liu, Chung-Chiun; Wu, Qinghai

1996-01-01

Pd/SiC Schottky diodes detect hydrogen and hydrocarbons with high sensitivity. Variation of the diode temperature from 100 C to 200 C shows that the diode sensitivity to propylene is temperature dependent. Long-term heat treating at 425 C up to 140 hours is carried out to determine the effect of extended heat treating on the diode properties and gas sensitivity. The heat treating significantly affects the diode's capacitive characteristics, but the diode's current carrying characteristics are much more stable with a large response to hydrogen. Scanning Electron Microscopy and X-ray Spectrometry studies of the Pd surface after the heating show cluster formation and background regions with grain structure observed in both regions. The Pd and Si concentrations vary between grains. Auger Electron Spectroscopy depth profiles revealed that the heat treating promoted interdiffusion and reaction between the Pd and SiC dw broadened the interface region. This work shows that Pd/SiC Schottky diodes have significant potential as high temperature gas sensors, but stabilization of the structure is necessary to insure their repeatability in long-term, high temperature applications.

Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2009-01-01

Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures over the range of -190 C to +225 C in terms of its voltage/current characteristic curves. The test temperatures included +22, -50, -100, -150, -175, -190, +50, +100, +150, +175, +200, and +225 C. Limited thermal cycling testing was also performed on the device. These tests consisted of subjecting the transistor to a total of twelve thermal cycles between -190 C and +225 C. A temperature rate of change of 10 C/min and a soak time at the test temperature of 10 minutes were used throughout this work. Post-cycling measurements were also performed at selected temperatures. In addition, re-start capability at extreme temperatures, i.e. power switched on while the device was soaking for a period of 20 minutes at the test temperatures of -190 C and +225 C, was investigated.

The Effect of Background Plasma Temperature on Growth and Damping of Whistler Mode Wave Power in the Earth's Magnetosphere

NASA Astrophysics Data System (ADS)

Maxworth, A. S.; Golkowski, M.; Malaspina, D.; Jaynes, A. N.

2017-12-01

Whistler mode waves play a dominant role in the energy dynamics of the Earth's magnetosphere. Trajectory of whistler mode waves can be predicted by raytracing. Raytracing is a numerical method which solves the Haselgrove's equations at each time step taking the background plasma parameters in to account. The majority of previous raytracing work was conducted assuming a cold (0 K) background magnetospheric plasma. Here we perform raytracing in a finite temperature plasma with background electron and ion temperatures of a few eV. When encountered with a high energy (>10 keV) electron distribution, whistler mode waves can undergo a power attenuation and/or growth, depending on resonance conditions which are a function of wave frequency, wave normal angle and particle energy. In this work we present the wave power attenuation and growth analysis of whistler mode waves, during the interaction with a high energy electron distribution. We have numerically modelled the high energy electron distribution as an isotropic velocity distribution, as well as an anisotropic bi-Maxwellian distribution. Both cases were analyzed with and without the temperature effects for the background magnetospheric plasma. Finally we compare our results with the whistler mode energy distribution obtained by the EMFISIS instrument hosted at the Van Allen Probe spacecraft.

X-rays diagnostics of the hot electron energy distribution in the intense laser interaction with metal targets

NASA Astrophysics Data System (ADS)

Kostenko, O. F.; Andreev, N. E.; Rosmej, O. N.

2018-03-01

A two-temperature hot electron energy distribution has been revealed by modeling of bremsstrahlung emission, measured by the radiation attenuation and half-shade methods, and Kα emission from a massive silver cylinder irradiated by a subpicosecond s-polarized laser pulse with a peak intensity of about 2 × 1019 W/cm2. To deduce parameters of the hot electron spectrum, we have developed semi-analytical models of generation and measurements of the x-rays. The models are based on analytical expressions and tabulated data on electron stopping power as well as cross-sections of generation and absorption of the x-rays. The Kα emission from thin silver foils deposited on low-Z substrates, both conducting and nonconducting, has been used to verify the developed models and obtained hot electron spectrum. The obtained temperatures of the colder and hotter electron components are in agreement with the values predicted by kinetic simulations of the cone-guided approach to fast ignition [Chrisman et al., Phys. Plasmas 15, 056309 (2008)]. The temperature of the low-energy component of the accelerated electron spectrum is well below the ponderomotive scaling and Beg's law. We have obtained relatively low conversion efficiency of laser energy into the energy of hot electrons propagating through the solid target of about 2%. It is demonstrated that the assumption about a single-temperature hot electron energy distribution with the slope temperature described by the ponderomotive scaling relationship, without detailed analysis of the hot electron spectrum, can lead to strong overestimation of the laser-to-electron energy-conversion efficiency, in particular, the conversion efficiency of laser energy into the high-temperature component of the hot electron distribution.

Use of a Frequency Divider to Evaluate an SOI NAND Gate Device, Type CHT-7400, for Wide Temperature Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad

2010-01-01

Frequency dividers constitute essential elements in designing phase-locked loop circuits and microwave systems. In addition, they are used in providing required clocking signals to microprocessors and can be utilized as digital counters. In some applications, particularly space missions, electronics are often exposed to extreme temperature conditions. Therefore, it is required that circuits designed for such applications incorporate electronic parts and devices that can tolerate and operate efficiently in harsh temperature environments. While present electronic circuits employ COTS (commercial-off- the-shelf) parts that necessitate and are supported with some form of thermal control systems to maintain adequate temperature for proper operation, it is highly desirable and beneficial if the thermal conditioning elements are eliminated. Amongst these benefits are: simpler system design, reduced weight and size, improved reliability, simpler maintenance, and reduced cost. Devices based on silicon-on-insulator (SOI) technology, which utilizes the addition of an insulation layer in the device structure to reduce leakage currents and to minimize parasitic junctions, are well suited for high temperatures due to reduced internal heating as compared to the conventional silicon devices, and less power consumption. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a divide-by-two frequency divider circuit built using COTS SOI logic gates was evaluated over a wide temperature range and thermal cycling to determine suitability for use in space exploration missions and terrestrial fields under extreme temperature conditions.

Conceptual Design of Electron-Beam Generated Plasma Tools

NASA Astrophysics Data System (ADS)

Agarwal, Ankur; Rauf, Shahid; Dorf, Leonid; Collins, Ken; Boris, David; Walton, Scott

2015-09-01

Realization of the next generation of high-density nanostructured devices is predicated on etching features with atomic layer resolution, no damage and high selectivity. High energy electron beams generate plasmas with unique features that make them attractive for applications requiring monolayer precision. In these plasmas, high energy beam electrons ionize the background gas and the resultant daughter electrons cool to low temperatures via collisions with gas molecules and lack of any accelerating fields. For example, an electron temperature of <0.6 eV with densities comparable to conventional plasma sources can be obtained in molecular gases. The chemistry in such plasmas can significantly differ from RF plasmas as the ions/radicals are produced primarily by beam electrons rather than those in the tail of a low energy distribution. In this work, we will discuss the conceptual design of an electron beam based plasma processing system. Plasma properties will be discussed for Ar, Ar/N2, and O2 plasmas using a computational plasma model, and comparisons made to experiments. The fluid plasma model is coupled to a Monte Carlo kinetic model for beam electrons which considers gas phase collisions and the effect of electric and magnetic fields on electron motion. The impact of critical operating parameters such as magnetic field, beam energy, and gas pressure on plasma characteristics in electron-beam plasma processing systems will be discussed. Partially supported by the NRL base program.

Electron temperatures within magnetic clouds between 2 and 4 AU: Voyager 2 observations

NASA Astrophysics Data System (ADS)

Sittler, E. C.; Burlaga, L. F.

1998-08-01

We have performed an analysis of Voyager 2 plasma electron observations within magnetic clouds between 2 and 4 AU identified by Burlaga and Behannon [1982]. The analysis has been confined to three of the magnetic clouds identified by Burlaga and Behannon that had high-quality data. The general properties of the plasma electrons within a magnetic cloud are that (1) the moment electron temperature anticorrelates with the electron density within the cloud, (2) the ratio Te/Tp tends to be >1, and (3) on average, Te/Tp~7.0. All three results are consistent with previous electron observations within magnetic clouds. Detailed analyses of the core and halo populations within the magnetic clouds show no evidence of either an anticorrelation between the core temperature TC and the electron density Ne or an anticorrelation between the halo temperature TH and the electron density. Within the magnetic clouds the halo component can contribute more than 50% of the electron pressure. The anticorrelation of Te relative to Ne can be traced to the density of the halo component relative to the density of the core component. The core electrons dominate the electron density. When the density goes up, the halo electrons contribute less to the electron pressure, so we get a lower Te. When the electron density goes down, the halo electrons contribute more to the electron pressure, and Te goes up. We find a relation between the electron pressure and density of the form Pe=αNeγ with γ~0.5.

Ion plated electronic tube device

DOEpatents

Meek, T.T.

1983-10-18

An electronic tube and associated circuitry which is produced by ion plating techniques. The process is carried out in an automated process whereby both active and passive devices are produced at very low cost. The circuitry is extremely reliable and is capable of functioning in both high radiation and high temperature environments. The size of the electronic tubes produced are more than an order of magnitude smaller than conventional electronic tubes.

Theory of Thermal Relaxation of Electrons in Semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sadasivam, Sridhar; Chan, Maria K. Y.; Darancet, Pierre

2017-09-01

We compute the transient dynamics of phonons in contact with high energy ``hot'' charge carriers in 12 polar and non-polar semiconductors, using a first-principles Boltzmann transport framework. For most materials, we find that the decay in electronic temperature departs significantly from a single-exponential model at times ranging from 1 ps to 15 ps after electronic excitation, a phenomenon concomitant with the appearance of non-thermal vibrational modes. We demonstrate that these effects result from the slow thermalization within the phonon subsystem, caused by the large heterogeneity in the timescales of electron-phonon and phonon-phonon interactions in these materials. We propose a generalizedmore » 2-temperature model accounting for the phonon thermalization as a limiting step of electron-phonon thermalization, which captures the full thermal relaxation of hot electrons and holes in semiconductors. A direct consequence of our findings is that, for semiconductors, information about the spectral distribution of electron-phonon and phonon-phonon coupling can be extracted from the multi-exponential behavior of the electronic temperature.« less

Ultra-low noise high electron mobility transistors for high-impedance and low-frequency deep cryogenic readout electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Q.; Liang, Y. X.; Ferry, D.

2014-07-07

We report on the results obtained from specially designed high electron mobility transistors at 4.2 K: the gate leakage current can be limited lower than 1 aA, and the equivalent input noise-voltage and noise-current at 1 Hz can reach 6.3 nV/Hz{sup 1∕2} and 20 aA/Hz{sup 1∕2}, respectively. These results open the way to realize high performance low-frequency readout electronics under very low-temperature conditions.

Efficient Planar Perovskite Solar Cells Using Passivated Tin Oxide as an Electron Transport Layer.

PubMed

Lee, Yonghui; Lee, Seunghwan; Seo, Gabseok; Paek, Sanghyun; Cho, Kyung Taek; Huckaba, Aron J; Calizzi, Marco; Choi, Dong-Won; Park, Jin-Seong; Lee, Dongwook; Lee, Hyo Joong; Asiri, Abdullah M; Nazeeruddin, Mohammad Khaja

2018-06-01

Planar perovskite solar cells using low-temperature atomic layer deposition (ALD) of the SnO 2 electron transporting layer (ETL), with excellent electron extraction and hole-blocking ability, offer significant advantages compared with high-temperature deposition methods. The optical, chemical, and electrical properties of the ALD SnO 2 layer and its influence on the device performance are investigated. It is found that surface passivation of SnO 2 is essential to reduce charge recombination at the perovskite and ETL interface and show that the fabricated planar perovskite solar cells exhibit high reproducibility, stability, and power conversion efficiency of 20%.

Electronic structure and electron-phonon coupling in TiH$$_2$$

DOE PAGES

Shanavas, Kavungal Veedu; Lindsay, Lucas R.; Parker, David S.

2016-06-15

Calculations using first principles methods and strong coupling theory are carried out to understand the electronic structure and superconductivity in cubic and tetragonal TiHmore » $$_2$$. A large electronic density of states at the Fermi level in the cubic phase arises from Ti-$$t_{2g}$$ states and leads to a structural instability against tetragonal distortion at low temperatures. However, constraining the in-plane lattice constants diminishes the energy gain associated with the tetragonal distortion, allowing the cubic phase to be stable at low temperatures. Furthermore, calculated phonon dispersions show decoupled acoustic and optic modes arising from Ti and H vibrations, respectively and frequencies of optic modes to be rather high. The cubic phase has a large electron-phonon coupling parameter $$\\lambda$$ and critical temperature of several K. Contribution of the hydrogen sublattice to $$\\lambda$$ is found to be small in this material, which we understand from strong coupling theory to be due to the small H-$s$ DOS at the Fermi level and high energy of hydrogen modes at the tetrahedral sites.« less

Transient thermal and nonthermal electron and phonon relaxation after short-pulsed laser heating of metals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giri, Ashutosh; Hopkins, Patrick E., E-mail: phopkins@virginia.edu

2015-12-07

Several dynamic thermal and nonthermal scattering processes affect ultrafast heat transfer in metals after short-pulsed laser heating. Even with decades of measurements of electron-phonon relaxation, the role of thermal vs. nonthermal electron and phonon scattering on overall electron energy transfer to the phonons remains unclear. In this work, we derive an analytical expression for the electron-phonon coupling factor in a metal that includes contributions from equilibrium and nonequilibrium distributions of electrons. While the contribution from the nonthermal electrons to electron-phonon coupling is non-negligible, the increase in the electron relaxation rates with increasing laser fluence measured by thermoreflectance techniques cannot bemore » accounted for by only considering electron-phonon relaxations. We conclude that electron-electron scattering along with electron-phonon scattering have to be considered simultaneously to correctly predict the transient nature of electron relaxation during and after short-pulsed heating of metals at elevated electron temperatures. Furthermore, for high electron temperature perturbations achieved at high absorbed laser fluences, we show good agreement between our model, which accounts for d-band excitations, and previous experimental data. Our model can be extended to other free electron metals with the knowledge of the density of states of electrons in the metals and considering electronic excitations from non-Fermi surface states.« less

APPARATUS FOR ELECTRON BEAM HEATING CONTROL

DOEpatents

Jones, W.H.; Reece, J.B.

1962-09-18

An improved electron beam welding or melting apparatus is designed which utilizes a high voltage rectifier operating below its temperature saturation region to decrease variations in electron beam current which normally result from the gas generated in such apparatus. (AEC)

James Webb Space Telescope Mid Infra-Red Instrument Pulse-Tube Cryocooler Electronics

NASA Technical Reports Server (NTRS)

Harvey, D.; Flowers, T.; Liu, N.; Moore, K.; Tran, D.; Valenzuela, P.; Franklin, B.; Michaels, D.

2013-01-01

The latest generation of long life, space pulse-tube cryocoolers require electronics capable of controlling self-induced vibration down to a fraction of a newton and coldhead temperature with high accuracy down to a few kelvin. Other functions include engineering diagnostics, heater and valve control, telemetry and safety protection of the cryocooler subsystem against extreme environments and operational anomalies. The electronics are designed to survive the thermal, vibration, shock and radiation environment of launch and orbit, while providing a design life in excess of 10 years on-orbit. A number of our current generation high reliability radiation-hardened electronics units are in various stages of integration on several space flight payloads. This paper describes the features and performance of our latest flight electronics designed for the pulse-tube cryocooler that is the pre-cooler for a closed cycle Joule-Thomson cooler providing 6K cooling for the James Webb Space Telescope (JWST) Mid Infra-Red Instrument (MIRI). The electronics is capable of highly accurate temperature control over the temperature range from 4K to 15K. Self-induced vibration is controlled to low levels on all harmonics up to the 16th. A unique active power filter controls peak-to-peak reflected ripple current on the primary power bus to a very low level. The 9 kg unit is capable of delivering 360W continuous power to NGAS's 3-stage pulse-tube High-Capacity Cryocooler (HCC).

DOE Office of Scientific and Technical Information (OSTI.GOV)

C. BARNES

Electron cyclotron emission (ECE) has been employed as a standard electron temperature profile diagnostic on many tokamaks and stellarators, but most magnetically confined plasma devices cannot take advantage of standard ECE diagnostics to measure temperature. They are either overdense, operating at high density relative to the magnetic field (e.g. {omega}{sub pe} >> {Omega}{sub ce} in a spherical torus) or they have insufficient density and temperature to reach the blackbody condition ({tau} > 2). Electron Bernstein waves (EBWs) are electrostatic waves which can propagate in overdense plasmas and have a high optical thickness at the electron cyclotron resonance layers, as amore » result of their large K{sub i}. This talk reports on measurements of EBW emission on the CDX-U spherical torus, where B{sub 0} {approx} 2 kG, {approx} 10{sup 13} cm{sup -3} and T{sub e} {approx} 10 - 200 eV. Results will be presented for both direct detection of EBWs and for mode-converted EBW emission. The EBW emission was absolutely calibrated and compared to the electron temperature profile measured by a multi-point Thomson scattering diagnostic. Depending on the plasma conditions, the mode-converted EBW radiation temperature was found to be {le} T{sub e} and the emission source was determined to be radially localized at the electron cyclotron resonance layer. A Langmuir triple probe was employed to measure changes in edge density profile in the vicinity of the upper hybrid resonance where the mode conversion of the EBWs is expected to occur. Changes in the mode conversion efficiency may explain the observation of mode-converted EBW radiation temperatures below T{sub e}. Initial results suggest EBW emission and EBW heating are viable concepts for plasmas where {omega}{sub pe} >> {Omega}{sub ce}.« less

Electron pairing without superconductivity

NASA Astrophysics Data System (ADS)

Levy, Jeremy

Strontium titanate (SrTiO3) is the first and best known superconducting semiconductor. It exhibits an extremely low carrier density threshold for superconductivity, and possesses a phase diagram similar to that of high-temperature superconductors--two factors that suggest an unconventional pairing mechanism. Despite sustained interest for 50 years, direct experimental insight into the nature of electron pairing in SrTiO3 has remained elusive. Here we perform transport experiments with nanowire-based single-electron transistors at the interface between SrTiO3 and a thin layer of lanthanum aluminate, LaAlO3. Electrostatic gating reveals a series of two-electron conductance resonances--paired electron states--that bifurcate above a critical pairing field Bp of about 1-4 tesla, an order of magnitude larger than the superconducting critical magnetic field. For magnetic fields below Bp, these resonances are insensitive to the applied magnetic field; for fields in excess of Bp, the resonances exhibit a linear Zeeman-like energy splitting. Electron pairing is stable at temperatures as high as 900 millikelvin, well above the superconducting transition temperature (about 300 millikelvin). These experiments demonstrate the existence of a robust electronic phase in which electrons pair without forming a superconducting state. Key experimental signatures are captured by a model involving an attractive Hubbard interaction that describes real-space electron pairing as a precursor to superconductivity. Support from AFOSR, ONR, ARO, NSF, DOE and NSSEFF is gratefully acknowledged.

Mach number dependence of electron heating at high Mach number interplanetary shocks in the inner heliospere

NASA Astrophysics Data System (ADS)

Matsukiyo, Shuichi

In the inner heliosphere a variety of interplanetary shocks with different Mach numbers are expected to be present. A possible maximum Mach number at 0.3AU from the sun is esti-mated to be about 40. Efficiency of electron heating in such high Mach number shocks is one of the outstanding issues of space plasma physics as well as astrophysics. Here, from this aspect, electron heating rate through microinstabilities generated in the transition region of a quasi-perpendicular shock for wide range of Mach numbers is investigated. Saturation levels of effective electron temperature as a result of modified two-stream instability (MTSI) are es-timated by using a semianalytic approach which we call an extended quasilinear analysis here. The results are compared with one-dimensional full particle-in-cell simulations. It is revealed that Mach number dependence of the effective electron temperature is weak when a Mach num-ber is below a certain critical value. Above the critical value, electron temperature increases being proportional to an upstream flow energy because of that a dominant microinstability in the foot changes from the MTSI to Buneman instability. The critical Mach number is roughly estimated to be a few tens.

Impact of Pre-Plasma on Electron Generation and Transport in Laser Plasma Interactions

NASA Astrophysics Data System (ADS)

Peebles, Jonathan Lee

Relativistic laser plasma interactions in conjunction with an underdense pre-plasma have been shown to generate a two temperature component electron spectrum. The lower temperature component described by "ponderomotive scaling'" is relatively well known and understood and is useful for applications such as the fast ignition inertial confinement fusion scheme. The higher energy electrons generated due to pre-plasma are denoted as "super-ponderomotive" electrons and facilitate interesting and useful applications. These include but are not limited to table top particle acceleration and generating high energy protons, x-rays and neutrons from secondary interactions. This dissertation describes experimental and particle-in-cell computational studies of the electron spectra produced from interactions between short pulse high intensity lasers and controlled pre-plasma conditions. Experiments were conducted at 3 laser labs: Texas Petawatt (University of Texas at Austin), Titan (Lawrence Livermore National Laboratory) and OMEGA-EP (University of Rochester). These lasers have different capabilities, and multiple experiments were carried out in order to fully understand super-ponderomotive electron generation and transport in the high intensity laser regime (I > 1018 W/cm2). In these experiments, an additional secondary long pulse beam was used to generate different scale lengths of "injected" pre-plasma while the pulse length and intensity of the short pulse beam were varied. The temperature and quantity of super-ponderomotive electrons were monitored with magnetic spectrometers and inferred via bremsstrahlung spectrometers while trajectory was estimated via Cu-Kalpha imaging. The experimental and simulation data show that super-ponderomotive electrons require pulse lengths of at least 450 fs to be accelerated and that higher intensity interactions generate large magnetic fields which cause severe deflection of the super-ponderomotive electrons. Laser incidence angle is shown to be extremely important in determining hot electron trajectory. Longer pulse length data taken on OMEGA-EP and Titan showed that super-ponderomotive electrons could be created without the need for an initial pre-plasma due to the underdense plasma created during the high intensity interaction alone.

Interpretation of transport measurements in ZnO-thin films

NASA Astrophysics Data System (ADS)

Petukhov, Vladimir; Stoemenos, John; Rothman, Johan; Bakin, Andrey; Waag, Andreas

2011-01-01

In order to interpret results of temperature dependent Hall measurements in heteroepitaxial ZnO-thin films, we adopted a multilayer conductivity model considering carrier-transport through the interfacial layer with degenerate electron gas as well as the upper part of ZnO layers with lower conductivity. This model was applied to the temperature dependence of the carrier concentration and mobility measured by Hall effect in a ZnO-layer grown on c-sapphire with conventional high-temperature MgO and low-temperature ZnO buffer. We also compared our results with the results of maximum entropy mobility-spectrum analysis (MEMSA). The formation of the highly conductive interfacial layer was explained by analysis of transmission electron microscopy (TEM) images taken from similar layers.

New World Vistas: Air and Space Power for the 21st Century, Materials Volume.

DTIC Science & Technology

1996-06-01

derivatives from niche (non-silicon) materials: IR sensors, radars, lasers, and high - temperature , adverse-environment electronics. Investment in these...Develop metastable interstitial composites to create extremely high temperatures for destroying chemical biological warfare agents. " Explosives: 1...synthesize of high temperature materials that will be tailored for specific applications/ components. These materials will tend to have microstructures on

Evaluation of Die-Attach Bonding Using High-Frequency Ultrasonic Energy for High-Temperature Application

NASA Astrophysics Data System (ADS)

Lee, Jong-Bum; Aw, Jie-Li; Rhee, Min-Woo

2014-09-01

Room-temperature die-attach bonding using ultrasonic energy was evaluated on Cu/In and Cu/Sn-3Ag metal stacks. The In and Sn-3Ag layers have much lower melting temperatures than the base material (Cu) and can be melted through the heat generated during ultrasonic bonding, forming intermetallic compounds (IMCs). Samples were bonded using different ultrasonic powers, bonding times, and forces and subsequently aged at 300°C for 500 h. After aging, die shear testing was performed and the fracture surfaces were inspected by scanning electron microscopy. Results showed that the shear strength of Cu/In joints reached an upper plateau after 100 h of thermal aging and remained stable with aging time, whereas that of the Cu/Sn-3Ag joints decreased with increasing aging time. η-Cu7In4 and (Cu,Au)11In9 IMCs were observed at the Cu/In joint, while Cu3Sn and (Ag,Cu)3Sn IMCs were found at the Cu/Sn-3Ag joint after reliability testing. As Cu-based IMCs have high melting temperatures, they are highly suitable for use in high-temperature electronics, but can be formed at room temperature using an ultrasonic approach.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreno, Gilbert; Bennion, Kevin

This project will develop thermal management strategies to enable efficient and high-temperature wide-bandgap (WBG)-based power electronic systems (e.g., emerging inverter and DC-DC converter designs). The use of WBG-based devices in automotive power electronics will improve efficiency and increase driving range in electric-drive vehicles; however, the implementation of this technology is limited, in part, due to thermal issues. This project will develop system-level thermal models to determine the thermal limitations of current automotive power modules under elevated device temperature conditions. Additionally, novel cooling concepts and material selection will be evaluated to enable high-temperature silicon and WBG devices in power electronics components.more » WBG devices (silicon carbide [SiC], gallium nitride [GaN]) promise to increase efficiency, but will be driven as hard as possible. This creates challenges for thermal management and reliability.« less

Non-isothermal electrochemical model for lithium-ion cells with composite cathodes

NASA Astrophysics Data System (ADS)

Basu, Suman; Patil, Rajkumar S.; Ramachandran, Sanoop; Hariharan, Krishnan S.; Kolake, Subramanya Mayya; Song, Taewon; Oh, Dukjin; Yeo, Taejung; Doo, Seokgwang

2015-06-01

Transition metal oxide cathodes for Li-ion batteries offer high energy density and high voltage. Composites of these materials have shown excellent life expectancy and improved thermal performance. In the present work, a comprehensive non-isothermal electrochemical model for a Lithium ion cell with a composite cathode is developed. The present work builds on lithium concentration-dependent diffusivity and thermal gradient of cathode potential, obtained from experiments. The model validation is performed for a wide range of temperature and discharge rates. Excellent agreement is found for high and room temperature with moderate success at low temperatures, which can be attributed to the low fidelity of material properties at low temperature. Although the cell operation is limited by electronic conductivity of NCA at room temperature, at low temperatures a shift in controlling process is seen, and operation is limited by electrolyte transport. At room temperature, the lithium transport in Cathode appears to be the main source of heat generation with entropic heat as the primary contributor at low discharge rates and ohmic heat at high discharge rates respectively. Improvement in electronic conductivity of the cathode is expected to improve the performance of these composite cathodes and pave way for its wider commercialization.

Superconducting active impedance converter

DOEpatents

Ginley, D.S.; Hietala, V.M.; Martens, J.S.

1993-11-16

A transimpedance amplifier for use with high temperature superconducting, other superconducting, and conventional semiconductors allows for appropriate signal amplification and impedance matching to processing electronics. The amplifier incorporates the superconducting flux flow transistor into a differential amplifier configuration which allows for operation over a wide temperature range, and is characterized by high gain, relatively low noise, and response times less than 200 picoseconds over at least a 10-80 K. temperature range. The invention is particularly useful when a signal derived from either far-IR focal plane detectors or from Josephson junctions is to be processed by higher signal/higher impedance electronics, such as conventional semiconductor technology. 12 figures.

Air-Cooled Heat Exchanger for High-Temperature Power Electronics: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Waye, S. K.; Lustbader, J.; Musselman, M.

2015-05-06

This work demonstrates a direct air-cooled heat exchanger strategy for high-temperature power electronic devices with an application specific to automotive traction drive inverters. We present experimental heat dissipation and system pressure curves versus flow rate for baseline and optimized sub-module assemblies containing two ceramic resistance heaters that provide device heat fluxes. The maximum allowable junction temperature was set to 175 deg.C. Results were extrapolated to the inverter scale and combined with balance-of-inverter components to estimate inverter power density and specific power. The results exceeded the goal of 12 kW/L and 12 kW/kg for power density and specific power, respectively.

Magnetic tunnel spin injectors for spintronics

NASA Astrophysics Data System (ADS)

Wang, Roger

Research in spin-based electronics, or "spintronics", has a universal goal to develop applications for electron spin in a broad range of electronics and strives to produce low power nanoscale devices. Spin injection into semiconductors is an important initial step in the development of spintronic devices, with the goal to create a highly spin polarized population of electrons inside a semiconductor at room temperature for study, characterization, and manipulation. This dissertation investigates magnetic tunnel spin injectors that aim to meet the spin injection requirements needed for potential spintronic devices. Magnetism and spin are inherently related, and chapter 1 provides an introduction on magnetic tunneling and spintronics. Chapter 2 then describes the fabrication of the spin injector structures studied in this dissertation, and also illustrates the optical spin detection technique that correlates the measured electroluminescence polarization from quantum wells to the electron spin polarization inside the semiconductor. Chapter 3 reports the spin injection from the magnetic tunnel transistor (MTT) spin injector, which is capable of producing highly spin polarized tunneling currents by spin selective scattering in its multilayer structure. The MTT achieves ˜10% lower bound injected spin polarization in GaAs at 1.4 K. Chapter 4 reports the spin injection from CoFe-MgO(100) tunnel spin injectors, where spin dependent tunneling through MgO(100) produces highly spin polarized tunneling currents. These structures achieve lower bound spin polarizations exceeding 50% at 100 K and 30% in GaAs at 290 K. The CoFe-MgO spin injectors also demonstrate excellent thermal stability, maintaining high injection efficiencies even after exposure to temperatures of up to 400 C. Bias voltage and temperature dependent studies on these structures indicate a significant dependence of the electroluminescence polarization on the spin and carrier recombination lifetimes inside the semiconductor. Chapter 5 investigates these spin and carrier lifetime effects on the electroluminescence polarization using time resolved optical techniques. These studies suggest that a peak in the carrier lifetime with temperature is responsible for the nonmonotonic temperature dependence observed in the electroluminescence polarization, and that the initially injected spin polarization from CoFe-MgO spin injectors is a nearly temperature independent ˜70% from 10 K up to room temperature.

Progress in high-temperature oven development for 28 GHz electron cyclotron resonance ion source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ohnishi, J., E-mail: ohnishi@riken.jp; Higurashi, Y.; Nakagawa, T.

2016-02-15

We have been developing a high-temperature oven using UO{sub 2} in the 28 GHz superconducting electron cyclotron resonance ion source at RIKEN since 2013. A total of eleven on-line tests were performed. The longest operation time in a single test was 411 h, and the consumption rate of UO{sub 2} was approximately 2.4 mg/h. In these tests, we experienced several problems: the ejection hole of a crucible was blocked with UO{sub 2} and a crucible was damaged because of the reduction of tungsten strength at high temperature. In order to solve these problems, improvements to the crucible shape were mademore » by simulations using ANSYS.« less

Saturation and negative temperature coefficient of electrical resistivity in liquid iron-sulfur alloys at high densities from first-principles calculations

NASA Astrophysics Data System (ADS)

Wagle, Fabian; Steinle-Neumann, Gerd; de Koker, Nico

2018-03-01

We report results on electronic transport properties of liquid Fe-S alloys at conditions of planetary cores, computed using first-principle techniques in the Kubo-Greenwood formalism. We describe a combined effect of resistivity saturation due to temperature, compression, and chemistry by comparing the electron mean free path from the Drude response of optical conductivity to the mean interatomic distance. At high compression and high sulfur concentration the Ioffe-Regel condition is satisfied, and the temperature coefficient of resistivity changes sign from positive to negative. We show that this happens due to a decrease in the d density of states at the Fermi level in response to thermal broadening.

High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics

NASA Astrophysics Data System (ADS)

Jiang, C.; Rumyantsev, S. L.; Samnakay, R.; Shur, M. S.; Balandin, A. A.

2015-02-01

We report on fabrication of MoS2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS2 thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a "memory step," was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS2 thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS2 thin-film transistors in extreme-temperature electronics and sensors.

Microstructures responsible for the invar and permalloy effects in Fe-Ni alloys

NASA Astrophysics Data System (ADS)

Ustinovshchikov, Yu. I.; Shabanova, I. N.; Lomova, N. V.

2015-05-01

The experimental studies of Fe68Ni32 and Fe23Ni77 alloys by transmission electron microscopy and X-ray electron spectroscopy show that the ordering-separation phase transition in these alloys occurs in a temperature range near 600°C. At temperatures higher than the transition temperature, the ordering energy of the alloy is positive, and the structures contain clusters enriched in one of the components. After heat treatment at the temperatures where the invar effect in the Fe68Ni32 alloy is maximal, a modulated microstructure forms. Below the transition temperature, the ordering energy is negative, which provides a tendency to formation of chemical compounds. After aging at these temperatures (where the Fe23Ni77 alloy exhibits high permalloy properties), highly dispersed completely coherent particles of the FeNi3 phase with structure L12 precipitate in a solid solution.

Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Huarui, E-mail: huarui.sun@bristol.ac.uk; Bajo, Miguel Montes; Uren, Michael J.

2015-01-26

Gate leakage degradation of AlGaN/GaN high electron mobility transistors under OFF-state stress is investigated using a combination of electrical, optical, and surface morphology characterizations. The generation of leakage “hot spots” at the edge of the gate is found to be strongly temperature accelerated. The time for the formation of each failure site follows a Weibull distribution with a shape parameter in the range of 0.7–0.9 from room temperature up to 120 °C. The average leakage per failure site is only weakly temperature dependent. The stress-induced structural degradation at the leakage sites exhibits a temperature dependence in the surface morphology, which ismore » consistent with a surface defect generation process involving temperature-associated changes in the breakdown sites.« less

Dust Acoustic Solitary Waves in Dusty Plasma with Trapped Electrons Having Different Temperature Nonthermal Ions

NASA Astrophysics Data System (ADS)

Deka, Manoj Kr.

2016-12-01

In this report, a detailed investigation on the study of dust acoustics solitary waves solution with negatively dust charge fluctuation in dusty plasma corresponding to lower and higher temperature nonthermal ions with trapped electrons is presented. We consider temporal variation of dust charge as a source of dissipation term to derive the lower order modified Kadomtsev-Petviashvili equation by using the reductive perturbation technique. Solitary wave solution is obtained with the help of sech method in presence of trapped electrons and low (and high) temperature nonthermal ions. Both nonthermality of ions and trapped state of the electrons are found to have an imperative control on the nonlinear coefficient, dissipative coefficient as well as height of the wave potential.

Anomalous electronic heat capacity of copper nanowires at sub-Kelvin temperatures

NASA Astrophysics Data System (ADS)

Viisanen, K. L.; Pekola, J. P.

2018-03-01

We have measured the electronic heat capacity of thin film nanowires of copper and silver at temperatures 0.1-0.3 K; the films were deposited by standard electron-beam evaporation. The specific heat of the Ag films of sub-100-nm thickness agrees with the bulk value and the free-electron estimate, whereas that of similar Cu films exceeds the corresponding reference values by one order of magnitude. The origin of the anomalously high heat capacity of copper films remains unknown for the moment. Based on the small heat capacity at low temperatures and the possibility to devise a tunnel probe thermometer on it, metal films form a promising absorber material, e.g., for microwave photon calorimetry.

Temperature gradient scale length measurement: A high accuracy application of electron cyclotron emission without calibration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Houshmandyar, S., E-mail: houshmandyar@austin.utexas.edu; Phillips, P. E.; Rowan, W. L.

2016-11-15

Calibration is a crucial procedure in electron temperature (T{sub e}) inference from a typical electron cyclotron emission (ECE) diagnostic on tokamaks. Although the calibration provides an important multiplying factor for an individual ECE channel, the parameter ΔT{sub e}/T{sub e} is independent of any calibration. Since an ECE channel measures the cyclotron emission for a particular flux surface, a non-perturbing change in toroidal magnetic field changes the view of that channel. Hence the calibration-free parameter is a measure of T{sub e} gradient. B{sub T}-jog technique is presented here which employs the parameter and the raw ECE signals for direct measurement ofmore » electron temperature gradient scale length.« less

AIN-Based Packaging for SiC High-Temperature Electronics

NASA Technical Reports Server (NTRS)

Savrun, Ender

2004-01-01

Packaging made primarily of aluminum nitride has been developed to enclose silicon carbide-based integrated circuits (ICs), including circuits containing SiC-based power diodes, that are capable of operation under conditions more severe than can be withstood by silicon-based integrated circuits. A major objective of this development was to enable packaged SiC electronic circuits to operate continuously at temperatures up to 500 C. AlN-packaged SiC electronic circuits have commercial potential for incorporation into high-power electronic equipment and into sensors that must withstand high temperatures and/or high pressures in diverse applications that include exploration in outer space, well logging, and monitoring of nuclear power systems. This packaging embodies concepts drawn from flip-chip packaging of silicon-based integrated circuits. One or more SiC-based circuit chips are mounted on an aluminum nitride package substrate or sandwiched between two such substrates. Intimate electrical connections between metal conductors on the chip(s) and the metal conductors on external circuits are made by direct bonding to interconnections on the package substrate(s) and/or by use of holes through the package substrate(s). This approach eliminates the need for wire bonds, which have been the most vulnerable links in conventional electronic circuitry in hostile environments. Moreover, the elimination of wire bonds makes it possible to pack chips more densely than was previously possible.

Mechanism of the high transition temperature for the 1111-type iron-based superconductors R FeAsO (R =rare earth ): Synergistic effects of local structures and 4 f electrons

NASA Astrophysics Data System (ADS)

Zhang, Lifang; Meng, Junling; Liu, Xiaojuan; Yao, Fen; Meng, Jian; Zhang, Hongjie

2017-07-01

Among the iron-based superconductors, the 1111-type Fe-As-based superconductors REFeAs O1 -xFx (RE = rare earth) exhibit high transition temperatures (Tc) above 40 K. We perform first-principles calculations based on density functional theory with the consideration of both electronic correlations and spin-orbit couplings on rare earths and Fe ions to study the underlying mechanism as the microscopic structural distortions in REFeAsO tuned by both lanthanide contraction and external strain. The electronic structures evolve similarly in both cases. It is found that there exist an optimal structural regime that will not only initialize but also optimize the orbital fluctuations due to the competing Fe-As and Fe-Fe crystal fields. We also find that the key structural features in REFeAsO, such as As-Fe-As bond angle, intrinsically induce the modification of the Fermi surface and dynamic spin fluctuation. These results suggest that the superconductivity is mediated by antiferromagnetic spin fluctuations. Simultaneously, we show that the rare-earth 4 f electrons play important roles on the high transition temperature whose behavior might be analogous to that of the heavy-fermion superconductors. The superconductivity of these 1111-type iron-based superconductors with high-Tc is considered to originate from the synergistic effects of local structures and 4 f electrons.

Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive X-ray spectroscopy in a Transmission Electron Microscope

NASA Astrophysics Data System (ADS)

Amari, H.; Lari, L.; Zhang, H. Y.; Geelhaar, L.; Chèze, C.; Kappers, M. J.; McAleese, C.; Humphreys, C. J.; Walther, T.

2011-11-01

Since the band structure of group III- nitrides presents a direct electronic transition with a band-gap energy covering the range from 3.4 eV for (GaN) to 6.2 eV (for AlN) at room temperature as well as a high thermal conductivity, aluminium gallium nitride (AlGaN) is a strong candidate for high-power and high-temperature electronic devices and short-wavelength (visible and ultraviolet) optoelectronic devices. We report here a study by energy-filtered transmission electron microscopy (EFTEM) and energy-dispersive X-ray spectroscopy (EDXS) of the micro structure and elemental distribution in different aluminium gallium nitride epitaxial layers grown by different research groups. A calibration procedure is out-lined that yields the Al content from EDXS to within ~1 at % precision.

Artificial optical emissions in the thermosphere induced by powerful radio waves: A review

NASA Astrophysics Data System (ADS)

Kosch, M.; Senior, A.; Gustavsson, B.; Grach, S.; Pedersen, T.; Rietveld, M.

High-power high-frequency radio waves beamed into the ionosphere with O-mode polarization cause plasma turbulence which can accelerate electrons These electrons collide with the F-layer neutrals causing artificial optical emissions identical to natural aurora The brightest optical emissions are O 1D 630 nm with a threshold of 2 eV and O 1S 557 7 nm with a threshold of 4 2 eV The optical emissions give direct evidence of electron acceleration by plasma turbulence as well as their non-Maxwellian energy spectrum HF pumping of the ionosphere also causes electron temperature enhancements but these alone are not sufficient to explain the optical emissions EISCAT plasma-line measurements indicate that the enhanced electron temperatures are consistent with the bulk of the electrons having a Maxwellian energy spectrum Novel discoveries include 1 Very large electron temperature enhancements of several 1000 K which maximise along the magnetic field line direction 2 Ion temperature enhancements of a few 100 K 3 Large ion outflows exceeding 200 m s 4 The F-layer optical emission maximizes sharply near the magnetic zenith with clear evidence of self-focusing 5 The optical emission generally appears below the HF pump reflection altitude as well as the upper-hybrid resonance height 6 The optical emission and HF coherent radar backscatter generally minimize when pumping on the third or higher electron gyro-harmonic frequency suggesting upper-hybrid waves as the primary mechanism 7 The optical emissions and HF coherent backscatter are enhanced on the

Strong Electron Self-Cooling in the Cold-Electron Bolometers Designed for CMB Measurements

NASA Astrophysics Data System (ADS)

Kuzmin, L. S.; Pankratov, A. L.; Gordeeva, A. V.; Zbrozhek, V. O.; Revin, L. S.; Shamporov, V. A.; Masi, S.; de Bernardis, P.

2018-03-01

We have realized cold-electron bolometers (CEB) with direct electron self-cooling of the nanoabsorber by SIN (Superconductor-Insulator-Normal metal) tunnel junctions. This electron self-cooling acts as a strong negative electrothermal feedback, improving noise and dynamic properties. Due to this cooling the photon-noise-limited operation of CEBs was realized in array of bolometers developed for the 345 GHz channel of the OLIMPO Balloon Telescope in the power range from 10 pW to 20 pW at phonon temperature Tph =310 mK. The negative electrothermal feedback in CEB is analogous to TES but instead of artificial heating we use cooling of the absorber. The high efficiency of the electron self-cooling to Te =100 mK without power load and to Te=160 mK under power load is achieved by: - a very small volume of the nanoabsorber (0.02 μm3) and a large area of the SIN tunnel junctions, - effective removal of hot quasiparticles by arranging double stock at both sides of the junctions and close position of the normal metal traps, - self-protection of the 2D array of CEBs against interferences by dividing them between N series CEBs (for voltage interferences) and M parallel CEBs (for current interferences), - suppression of Andreev reflection by a thin layer of Fe in the AlFe absorber. As a result even under high power load the CEBs are working at electron temperature Te less than Tph . To our knowledge, there is no analogue in the bolometers technology in the world for bolometers working at electron temperature colder than phonon temperature.

Single Crystal Diamond Needle as Point Electron Source

PubMed Central

Kleshch, Victor I.; Purcell, Stephen T.; Obraztsov, Alexander N.

2016-01-01

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2–0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics. PMID:27731379

The influence of the Ar/O2 ratio on the electron density and electron temperature in microwave discharges

NASA Astrophysics Data System (ADS)

Espinho, S.; Hofmann, S.; Palomares, J. M.; Nijdam, S.

2017-10-01

The aim of this work is to study the properties of Ar-O2 microwave driven surfatron plasmas as a function of the Ar/O2 ratio in the gas mixture. The key parameters are the plasma electron density and electron temperature, which are estimated with Thomson scattering (TS) for O2 contents up to 50% of the total gas flow. A sharp drop in the electron density from {10}20 {{{m}}}-3 to approximately {10}18 {{{m}}}-3 is estimated as the O2 content in the gas mixture is increased up to 15%. For percentages of O2 lower than 10%, the electron temperature is estimated to be about 2-3 times higher than in the case of a pure argon discharge in the same conditions ({T}{{e}}≈ 1 eV) and gradually decreases as the O2 percentage is raised to 50%. However, for O2 percentages above 30%, the scattering spectra become Raman dominated, resulting in large uncertainties in the estimated electron densities and temperatures. The influence of photo-detached electrons from negative ions caused by the typical TS laser fluences is also likely to contribute to the uncertainty in the measured electron densities for high O2 percentages. Moreover, the detection limit of the system is reached for percentages of O2 higher than 25%. Additionally, both the electron density and temperature of microwave discharges with large Ar/O2 ratios are more sensitive to gas pressure variations.

The contribution of electron collisions to rotational excitations of cometary water

NASA Technical Reports Server (NTRS)

Xie, Xingfa; Mumma, Michael J.

1992-01-01

The e-H2O collisional rate for exciting rotational transitions in cometary water is evaluated for conditions found in comet Halley during the Giotto spacecraft encounter. In the case of the O(sub 00) yields 1(sub 11) rotational transition, the e-H2O collisional rate exceeds that for excitation by neutral-neutral collisions at distances exceeding 3000 km from the cometary nucleus. Thus, the rotational temperature of the water molecule in the intermediate coma may be controlled by collisions with electrons rather than with neutral collisions, and the rotational temperature retrieved from high resolution infrared spectra of water in comet Halley may reflect electron temperatures rather than neutral gas temperature in the intermediate coma.

High thermoelectric power factor in two-dimensional crystals of Mo S2

NASA Astrophysics Data System (ADS)

Hippalgaonkar, Kedar; Wang, Ying; Ye, Yu; Qiu, Diana Y.; Zhu, Hanyu; Wang, Yuan; Moore, Joel; Louie, Steven G.; Zhang, Xiang

2017-03-01

The quest for high-efficiency heat-to-electricity conversion has been one of the major driving forces toward renewable energy production for the future. Efficient thermoelectric devices require high voltage generation from a temperature gradient and a large electrical conductivity while maintaining a low thermal conductivity. For a given thermal conductivity and temperature, the thermoelectric power factor is determined by the electronic structure of the material. Low dimensionality (1D and 2D) opens new routes to a high power factor due to the unique density of states (DOS) of confined electrons and holes. The 2D transition metal dichalcogenide (TMDC) semiconductors represent a new class of thermoelectric materials not only due to such confinement effects but especially due to their large effective masses and valley degeneracies. Here, we report a power factor of Mo S2 as large as 8.5 mW m-1K-2 at room temperature, which is among the highest measured in traditional, gapped thermoelectric materials. To obtain these high power factors, we perform thermoelectric measurements on few-layer Mo S2 in the metallic regime, which allows us to access the 2D DOS near the conduction band edge and exploit the effect of 2D confinement on electron scattering rates, resulting in a large Seebeck coefficient. The demonstrated high, electronically modulated power factor in 2D TMDCs holds promise for efficient thermoelectric energy conversion.

Electrical conductivity of rigid polyurethane foam at high temperature

NASA Astrophysics Data System (ADS)

Johnson, R. T., Jr.

1982-08-01

The electrical conductivity of rigid polyurethane foam, used for electronic encapsulation, was measured during thermal decomposition to 3400 C. At higher temperatures the conductance continues to increase. With pressure loaded electrical leads, sample softening results in eventual contact between electrodes which produces electrical shorting. Air and nitrogen environments show no significant dependence of the conductivity on the atmosphere over the temperature range. The insulating characteristics of polyurethane foam below approx. 2700 C are similar to those for silicone based materials used for electronic case housings and are better than those for phenolics. At higher temperatures (greater than or equal to 2700 C) the phenolics appear to be better insulators to approx. 5000 C and the silicones to approx. 6000 C. It is concluded that the Sylgard 184/GMB encapsulant is a significantly better insulator at high temperature than the rigid polyurethane foam.

Temperature, stress, and annealing effects on the luminescence from electron-irradiated silicon

NASA Technical Reports Server (NTRS)

Jones, C. E.; Johnson, E. S.; Compton, W. D.; Noonan, J. R.; Streetman, B. G.

1973-01-01

Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G15(K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing of these lines are discussed.

Performance of High Temperature Operational Amplifier, Type LM2904WH, under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

2008-01-01

Operation of electronic parts and circuits under extreme temperatures is anticipated in NASA space exploration missions as well as terrestrial applications. Exposure of electronics to extreme temperatures and wide-range thermal swings greatly affects their performance via induced changes in the semiconductor material properties, packaging and interconnects, or due to incompatibility issues between interfaces that result from thermal expansion/contraction mismatch. Electronics that are designed to withstand operation and perform efficiently in extreme temperatures would mitigate risks for failure due to thermal stresses and, therefore, improve system reliability. In addition, they contribute to reducing system size and weight, simplifying its design, and reducing development cost through the elimination of otherwise required thermal control elements for proper ambient operation. A large DC voltage gain (100 dB) operational amplifier with a maximum junction temperature of 150 C was recently introduced by STMicroelectronics [1]. This LM2904WH chip comes in a plastic package and is designed specifically for automotive and industrial control systems. It operates from a single power supply over a wide range of voltages, and it consists of two independent, high gain, internally frequency compensated operational amplifiers. Table I shows some of the device manufacturer s specifications.

Time Dependent Predictive Modeling of DIII-D ITER Baseline Scenario using Predictive TRANSP

NASA Astrophysics Data System (ADS)

Grierson, B. A.; Andre, R. G.; Budny, R. V.; Solomon, W. M.; Yuan, X.; Candy, J.; Pinsker, R. I.; Staebler, G. M.; Holland, C.; Rafiq, T.

2015-11-01

ITER baseline scenario discharges on DIII-D are modeled with TGLF and MMM transitioning from combined ECH (3.3MW) +NBI(2.8MW) heating to NBI only (3.0 MW) heating maintaining βN = 2.0 on DIII-D predicting temperature, density and rotation for comparison to experimental measurements. These models capture the reduction of confinement associated with direct electron heating H98y2 = 0.89 vs. 1.0) consistent with stiff electron transport. Reasonable agreement between experimental and modeled temperature profiles is achieved for both heating methods, whereas density and momentum predictions differ significantly. Transport fluxes from TGLF indicate that on DIII-D the electron energy flux has reached a transition from low-k to high-k turbulence with more stiff high-k transport that inhibits an increase in core electron stored energy with additional electron heating. Projections to ITER also indicate high electron stiffness. Supported by US DOE DE-AC02-09CH11466, DE-FC02-04ER54698, DE-FG02-07ER54917, DE-FG02-92-ER54141.

dc-plasma-sprayed electronic-tube device

DOEpatents

Meek, T.T.

1982-01-29

An electronic tube and associated circuitry which is produced by dc plasma arc spraying techniques is described. The process is carried out in a single step automated process whereby both active and passive devices are produced at very low cost. The circuitry is extremely reliable and is capable of functioning in both high radiation and high temperature environments. The size of the electronic tubes produced are more than an order of magnitude smaller than conventional electronic tubes.

Investigation of the temperature dependent field emission from individual ZnO nanowires for evidence of field-induced hot electrons emission.

PubMed

Chen, Yicong; Zhang, Zhipeng; Li, Zhi-Bing; She, Juncong; Deng, Shaozhi; Xu, Ning-Sheng; Chen, Jun

2018-06-27

ZnO nanowires as field emitters have important applications in flat panel display and X-ray source. Understanding the intrinsic field emission mechanism is crucial for further improving the performance of ZnO nanowire field emitters. In this article, the temperature dependent field emission from individual ZnO nanowires was investigated by an in-situ measurement in ultra-high vacuum. The divergent temperature-dependent Fowler-Nordheim plots is found in the low field region. A field-induced hot electrons emission model that takes into account penetration length is proposed to explain the results. The carrier density and temperature dependence of the field-induced hot electrons emission current are derived theoretically. The obtained results are consistent with the experimental results, which could be attributed to the variation of effective electron temperature. All of these are important for a better understanding on the field emission process of semiconductor nanostructures. © 2018 IOP Publishing Ltd.

Power control electronics for cryogenic instrumentation

NASA Technical Reports Server (NTRS)

Ray, Biswajit; Gerber, Scott S.; Patterson, Richard L.; Myers, Ira T.

1995-01-01

In order to achieve a high-efficiency high-density cryogenic instrumentation system, the power processing electronics should be placed in the cold environment along with the sensors and signal-processing electronics. The typical instrumentation system requires low voltage dc usually obtained from processing line frequency ac power. Switch-mode power conversion topologies such as forward, flyback, push-pull, and half-bridge are used for high-efficiency power processing using pulse-width modulation (PWM) or resonant control. This paper presents several PWM and multiresonant power control circuits, implemented using commercially available CMOS and BiCMOS integrated circuits, and their performance at liquid-nitrogen temperature (77 K) as compared to their room temperature (300 K) performance. The operation of integrated circuits at cryogenic temperatures results in an improved performance in terms of increased speed, reduced latch-up susceptibility, reduced leakage current, and reduced thermal noise. However, the switching noise increased at 77 K compared to 300 K. The power control circuits tested in the laboratory did successfully restart at 77 K.

Characterization of spatially resolved high resolution x-ray spectrometers for HEDP and light-source experiments

NASA Astrophysics Data System (ADS)

Hill, K. W.; Bitter, M.; Delgado-Aparicio, L.; Efthimion, P.; Pablant, N.; Lu, J.; Beiersdorfer, P.; Chen, H.; Magee, E.

2014-10-01

A high resolution 1D imaging x-ray spectrometer concept comprising a spherically bent crystal and a 2D pixelated detector is being optimized for diagnostics of small sources such as high energy density physics (HEDP) and synchrotron radiation or x-ray free electron laser experiments. This instrument is used on tokamak experiments for measurement of spatial profiles of Doppler ion temperature and plasma flow velocity, as well as electron temperature. Laboratory measurements demonstrate a resolving power, E/ ΔE of 10,000 and spatial resolution better than 10 μm. Good performance is obtained for Bragg angles ranging from 23 to 63 degrees. Initial tests of the instrument on HEDP plasmas are being performed with a goal of developing spatially resolved ion and electron temperature diagnostics. This work was performed under the auspices of the US DOE by PPPL under Contract DE-AC02-09CH11466 and by LLNL under Contract DE-AC52-07NA27344.

Calculation of gyrosynchrotron radiation brightness temperature for outer bright loop of ICME

NASA Astrophysics Data System (ADS)

Sun, Weiying; Wu, Ji; Wang, C. B.; Wang, S.

:Solar polar orbit radio telescope (SPORT) is proposed to detect the high density plasma clouds of outer bright loop of ICMEs from solar orbit with large inclination. Of particular interest is following the propagation of the plasma clouds with remote sensor in radio wavelength band. Gyrosynchrotron emission is a main radio radiation mechanism of the plasma clouds and can provide information of interplanetary magnetic field. In this paper, we statistically analyze the electron density, electron temperature and magnetic field of background solar wind in time of quiet sun and ICMEs propagation. We also estimate the fluctuation range of the electron density, electron temperature and magnetic field of outer bright loop of ICMEs. Moreover, we calculate and analyze the emission brightness temperature and degree of polarization on the basis of the study of gyrosynchrotron emission, absorption and polarization characteristics as the optical depth is less than or equal to 1.

The effect of electron collisions on rotational populations of cometary water

NASA Technical Reports Server (NTRS)

Xie, Xingfa; Mumma, Michael J.

1992-01-01

The e-H2O collisional rate for exciting rotational transitions in cometary water is evaluated for conditions found in Comet Halley during the Giotto spacecraft encounter. In the case of the 0(00)-1(11) rotational transition, the e-H2O collisional rate exceeds that for excitation by neutral-neutral collisions at distances exceeding 3000 km from the cometary nucleus. The estimates are based on theoretical and experimental studies of e-H2O collisions, on ion and electron parameters acquired in situ by instruments on the Giotto and Vega spacecraft, and on results obtained from models of the cometary ionosphere. Thus, the rotational temperature of the water molecule in the intermediate coma may be controlled by collisions with electrons rather than with neutral molecules, and the rotational temperature retrieved from high-resolution IR spectra of water in Comet Halley may reflect electron temperatures rather than neutral gas temperatures in the intermediate coma.

Systematic investigation of structural, electronic, optical and thermal properties of ternary MoAlB; an ab initio approach

NASA Astrophysics Data System (ADS)

Rajpoot, Priyanka; Rastogi, Anugya; Verma, U. P.

2018-02-01

Structural, electronic, optical and thermal properties of molybdenum aluminum boride (MoAlB) have been analyzed systematically using the full potential linearized augmented plane wave method based on density functional theory at ambient condition as well as high pressure and high temperature. Density of states and band structure calculation reflect the metallic character of MoAlB. In addition to this, the electron charge density calculation reveals the strong covalent bonding, in between ‘B’ atoms as well as ‘Mo’ and ‘B’ atoms. Optical parameters exhibit anisotropic nature and MoAlB become transparent in ultraviolet region for the radiation of energy above 25 eV. The thermal properties were investigated by using the quasi-harmonic Debye model at high temperature and high pressure.

High-temperature superconductivity for avionic electronic warfare and radar systems

NASA Astrophysics Data System (ADS)

Ryan, Paul A.

1994-01-01

The electronic warfare (EW) and radar communities expect to be major beneficiaries of the performance advantages high-temperature superconductivity (HTS) has to offer over conventional technology. Near term upgrades to system hardware can be envisioned using extremely small, high Q, microwave filters and resonators; compact, wideband, low loss, microwave delay and transmission lines; as well as, wideband, low loss, monolithic microwave integrated circuit phase shifters. The most dramatic impact will be in the far term, using HTS to develop new, real time threat identification and response strategy receiver/processing systems designed to utilize the unique high frequency properties of microwave and ultimately digital HTS.

A wearable pressure sensor based on ultra-violet/ozone microstructured carbon nanotube/polydimethylsiloxane arrays for electronic skins.

PubMed

Yu, Guohui; Hu, Jingdong; Tan, Jianping; Gao, Yang; Lu, Yongfeng; Xuan, Fuzhen

2018-03-16

Pressure sensors with high performance (e.g., a broad pressure sensing range, high sensitivities, rapid response/relaxation speeds, temperature-stable sensing), as well as a cost-effective and highly efficient fabrication method are highly desired for electronic skins. In this research, a high-performance pressure sensor based on microstructured carbon nanotube/polydimethylsiloxane arrays was fabricated using an ultra-violet/ozone (UV/O 3 ) microengineering technique. The UV/O 3 microengineering technique is controllable, cost-effective, and highly efficient since it is conducted at room temperature in an ambient environment. The pressure sensor offers a broad pressure sensing range (7 Pa-50 kPa), a sensitivity of ∼ -0.101 ± 0.005 kPa -1 (<1 kPa), a fast response/relaxation speed of ∼10 ms, a small dependence on temperature variation, and a good cycling stability (>5000 cycles), which is attributed to the UV/O 3 engineered microstructures that amplify and transfer external applied forces and rapidly store/release the energy during the PDMS deformation. The sensors developed show the capability to detect external forces and monitor human health conditions, promising for the potential applications in electronic skin.

A wearable pressure sensor based on ultra-violet/ozone microstructured carbon nanotube/polydimethylsiloxane arrays for electronic skins

NASA Astrophysics Data System (ADS)

Yu, Guohui; Hu, Jingdong; Tan, Jianping; Gao, Yang; Lu, Yongfeng; Xuan, Fuzhen

2018-03-01

Pressure sensors with high performance (e.g., a broad pressure sensing range, high sensitivities, rapid response/relaxation speeds, temperature-stable sensing), as well as a cost-effective and highly efficient fabrication method are highly desired for electronic skins. In this research, a high-performance pressure sensor based on microstructured carbon nanotube/polydimethylsiloxane arrays was fabricated using an ultra-violet/ozone (UV/O3) microengineering technique. The UV/O3 microengineering technique is controllable, cost-effective, and highly efficient since it is conducted at room temperature in an ambient environment. The pressure sensor offers a broad pressure sensing range (7 Pa-50 kPa), a sensitivity of ˜ -0.101 ± 0.005 kPa-1 (<1 kPa), a fast response/relaxation speed of ˜10 ms, a small dependence on temperature variation, and a good cycling stability (>5000 cycles), which is attributed to the UV/O3 engineered microstructures that amplify and transfer external applied forces and rapidly store/release the energy during the PDMS deformation. The sensors developed show the capability to detect external forces and monitor human health conditions, promising for the potential applications in electronic skin.

Cryogenic low noise and low dissipation multiplexing electronics, using HEMT+SiGe ASICs, for the readout of high impedance sensors: New version

NASA Astrophysics Data System (ADS)

de la Broïse, Xavier; Lugiez, Francis; Bounab, Ayoub; Le Coguie, Alain

2015-07-01

High Electron Mobility Transistors (HEMTs), optimized by CNRS/LPN laboratory for ultra-low noise at very low temperature, have demonstrated their capacity to be used in place of Si JFETs when working temperatures below 100 K are required. We associated them with specific SiGe ASICs that we developed, to implement a complete readout channel able to read highly segmented high impedance detectors within a framework of very low thermal dissipation. Our electronics is dimensioned to read 4096 detection channels, of typically 1 MΩ impedance, and performs 32:1 multiplexing and amplifying, dissipating only 6 mW at 2.5 K and 100 mW at 15 K thanks to high impedance commuting of input stage, with a typical noise of 1 nV/√Hz at 1 kHz.

Photosynthetic temperature responses of tree species in Rwanda: evidence of pronounced negative effects of high temperature in montane rainforest climax species.

PubMed

Vårhammar, Angelica; Wallin, Göran; McLean, Christopher M; Dusenge, Mirindi Eric; Medlyn, Belinda E; Hasper, Thomas B; Nsabimana, Donat; Uddling, Johan

2015-05-01

The sensitivity of photosynthetic metabolism to temperature has been identified as a key uncertainty for projecting the magnitude of the terrestrial feedback on future climate change. While temperature responses of photosynthetic capacities have been comparatively well investigated in temperate species, the responses of tropical tree species remain unexplored. We compared the responses of seedlings of native cold-adapted tropical montane rainforest tree species with those of exotic warm-adapted plantation species, all growing in an intermediate temperature common garden in Rwanda. Leaf gas exchange responses to carbon dioxide (CO2 ) at different temperatures (20-40°C) were used to assess the temperature responses of biochemical photosynthetic capacities. Analyses revealed a lower optimum temperature for photosynthetic electron transport rates than for Rubisco carboxylation rates, along with lower electron transport optima in the native cold-adapted than in the exotic warm-adapted species. The photosynthetic optimum temperatures were generally exceeded by daytime peak leaf temperatures, in particular in the native montane rainforest climax species. This study thus provides evidence of pronounced negative effects of high temperature in tropical trees and indicates high susceptibility of montane rainforest climax species to future global warming. © 2015 The Authors. New Phytologist © 2015 New Phytologist Trust.

Evidence of Collisionless Shocks in a Hall Thruster Plume

DTIC Science & Technology

2003-04-25

Triple Langmuir probes and emissive probes are used to measure the electron number density, electron temperature, and plasma potential downstream of a low-power Hall thruster . The results show a high density plasma core with elevated electron temperature and plasma potential along the thruster centerline. These properties are believed to be due to collisionless shocks formed as a result of the ion/ion acoustic instability. A simple model is presented that shows the existence of a collisionless shock to be consistent with the observed phenomena.

High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires.

PubMed

Boland, Jessica L; Amaduzzi, Francesca; Sterzl, Sabrina; Potts, Heidi; Herz, Laura M; Fontcuberta I Morral, Anna; Johnston, Michael B

2018-06-13

InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs 0.65 Sb 0.35 . We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs 0.65 Sb 0.35 nanowires to date, exceeding 16,000 cm 2 V -1 s -1 at 10 K.

Thermoluminescent response of LiF:Mg,Ti to 20 keV electrons.

PubMed

Mercado-Uribe, H; Brandan, M E

2002-01-01

The thermoluminescence response of LiF:Mg,Ti (TLD-100) to 20 keV electrons from a scanning electron microscope has been measured. Radiochromic dye films previously calibrated were used to determine the fluence incident on TLD-100 chips. The procedure for irradiation and glow curve deconvolution was adhered to the protocols previously determined in our laboratory for gamma rays and heavy charged particles. The response at electron fluences higher than 4 x 10(10) cm(-2) is supralinear, due to the increasingly relevant contribution of the high temperature peaks. The relative contribution of the high temperature peaks to the TL signal is abnormally small, about half that observed in gamma irradiation and four times smaller than what has been measured in low-energy X ray exposure.

Relativistic thermal electron scale instabilities in sheared flow plasma

NASA Astrophysics Data System (ADS)

Miller, Evan D.; Rogers, Barrett N.

2016-04-01

> The linear dispersion relation obeyed by finite-temperature, non-magnetized, relativistic two-fluid plasmas is presented, in the special case of a discontinuous bulk velocity profile and parallel wave vectors. It is found that such flows become universally unstable at the collisionless electron skin-depth scale. Further analyses are performed in the limits of either free-streaming ions or ultra-hot plasmas. In these limits, the system is highly unstable in the parameter regimes associated with either the electron scale Kelvin-Helmholtz instability (ESKHI) or the relativistic electron scale sheared flow instability (RESI) recently highlighted by Gruzinov. Coupling between these modes provides further instability throughout the remaining parameter space, provided both shear flow and temperature are finite. An explicit parameter space bound on the highly unstable region is found.

Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications

PubMed Central

Socratous, Josephine; Banger, Kulbinder K; Vaynzof, Yana; Sadhanala, Aditya; Brown, Adam D; Sepe, Alessandro; Steiner, Ullrich; Sirringhaus, Henning

2015-01-01

The electronic structure of low temperature, solution-processed indium–zinc oxide thin-film transistors is complex and remains insufficiently understood. As commonly observed, high device performance with mobility >1 cm2 V−1 s−1 is achievable after annealing in air above typically 250 °C but performance decreases rapidly when annealing temperatures ≤200 °C are used. Here, the electronic structure of low temperature, solution-processed oxide thin films as a function of annealing temperature and environment using a combination of X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and photothermal deflection spectroscopy is investigated. The drop-off in performance at temperatures ≤200 °C to incomplete conversion of metal hydroxide species into the fully coordinated oxide is attributed. The effect of an additional vacuum annealing step, which is beneficial if performed for short times at low temperatures, but leads to catastrophic device failure if performed at too high temperatures or for too long is also investigated. Evidence is found that during vacuum annealing, the workfunction increases and a large concentration of sub-bandgap defect states (re)appears. These results demonstrate that good devices can only be achieved in low temperature, solution-processed oxides if a significant concentration of acceptor states below the conduction band minimum is compensated or passivated by shallow hydrogen and oxygen vacancy-induced donor levels. PMID:26190964

Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications.

PubMed

Socratous, Josephine; Banger, Kulbinder K; Vaynzof, Yana; Sadhanala, Aditya; Brown, Adam D; Sepe, Alessandro; Steiner, Ullrich; Sirringhaus, Henning

2015-03-25

The electronic structure of low temperature, solution-processed indium-zinc oxide thin-film transistors is complex and remains insufficiently understood. As commonly observed, high device performance with mobility >1 cm 2 V -1 s -1 is achievable after annealing in air above typically 250 °C but performance decreases rapidly when annealing temperatures ≤200 °C are used. Here, the electronic structure of low temperature, solution-processed oxide thin films as a function of annealing temperature and environment using a combination of X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and photothermal deflection spectroscopy is investigated. The drop-off in performance at temperatures ≤200 °C to incomplete conversion of metal hydroxide species into the fully coordinated oxide is attributed. The effect of an additional vacuum annealing step, which is beneficial if performed for short times at low temperatures, but leads to catastrophic device failure if performed at too high temperatures or for too long is also investigated. Evidence is found that during vacuum annealing, the workfunction increases and a large concentration of sub-bandgap defect states (re)appears. These results demonstrate that good devices can only be achieved in low temperature, solution-processed oxides if a significant concentration of acceptor states below the conduction band minimum is compensated or passivated by shallow hydrogen and oxygen vacancy-induced donor levels.

Thermoluminescent response of TLD-100 irradiated with 20 keV electrons and the use of radiochromic dye films for the fluence determination

NASA Astrophysics Data System (ADS)

Mercado-Uribe, H.; Brandan, M. E.

2004-07-01

We have measured the LiF:Mg,Ti (TLD-100) fluence response and supralinearity function to 20 keV electrons in the fluence interval between 5 × 10 9 and 4 × 10 12 cm -2. TLD-100 shows linear response up to 2 × 10 10 cm -2, followed by supralinearity and saturation after 10 12 cm -2. Peak 5 is slightly supralinear, f( n) max=1.1±0.1, while high temperature peaks reach up to f( n) max≈8. Peak 5 saturates at n≈1×10 11 cm -2, fluence smaller than any of the saturating fluences of the high temperature peaks. We have also measured the glow curve shape of TLD-100 irradiated with 40 keV electrons, beta particles from a 90Sr/ 90Y source and 1.3 and 6.0 MeV electrons from accelerators. Results are interesting and unexpected in that, for a given macroscopic dose, electrons show a smaller relative contribution of high-temperature peaks with respect to peak 5 than heavy ions or X- and γ-rays. The 20 and 40 keV electron irradiations were performed with a scanning electron microscope using radiochromic dye film to measure fluence. Since film calibrations were performed using 60Co γ-rays which expose the totality of the film volume, the use of this method with low energy electrons required to develop a formalism that takes into account the sensitive thickness of the film in relation to the range of the incident particles.

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

NASA Astrophysics Data System (ADS)

Wang, Ning; Wang, Hui; Lin, Xinpeng; Qi, Yongle; Duan, Tianli; Jiang, Lingli; Iervolino, Elina; Cheng, Kai; Yu, Hongyu

2017-09-01

Degradation on DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) after applying pulsed gate stress at cryogenic temperatures is presented in this paper. The nitrogen vacancy near to the AlGaN/GaN interface leads to threshold voltage of stress-free sample shifting positively at low temperature. The anomalous behavior of threshold voltage variation (decrease first and then increase) under gate stressing as compared to stress-free sample is observed when lowing temperature. This can be correlated with the pre-existing electron traps in SiNX layer or at SiNX/AlGaN interface which can be de-activated and the captured electrons inject back to channel with lowering temperature, which counterbalances the influence of nitrogen vacancy on threshold voltage shift.

CO2 sensing of La0.875Ca0.125FeO3 in wet vapor: a comparison of experimental results and first-principles calculations.

PubMed

Wang, Xiaofeng; Chen, Yanping; Qin, Hongwei; Li, Ling; Shi, Changmin; Liu, Liang; Hu, Jifan

2015-05-28

Experimental results show that with an increase of relative humidity, the resistance of La0.875Ca0.125FeO3 decreases at room temperature but increases at higher temperatures (140-360 °C). The humid effect at room temperature is due to the movement of H(+) or H3O(+) inside of the condensed water layer on the surface of La0.875Ca0.125FeO3. Regarding the humid effect at high temperatures, the density functional theory (DFT) calculations show that H2O can be adsorbed onto the La0.875Ca0.125FeO3 surface in the molecular and dissociative adsorption configurations, where the La0.875Ca0.125FeO3 surface gains some electrons from H2O or its dissociative products, consistent with our observation. Experimental results also show that CO2 sensing response at high temperatures decreases with an increase of room-temperature relative humidity. DFT calculations indicate that CO2 adsorbed onto the La0.875Ca0.125FeO3(010) surface, where high concentration oxygen adsorption occurs without water adsorption nearby, releases some electrons into the semiconductor surface, playing the role of a donor. The interaction between CO2 and the local La0.875Ca0.125FeO3(010) surface with pre-adsorption of H2O nearby results in some electron transfer from the La0.875Ca0.125FeO3 surface to CO2, which is responsible for the weakening of CO2 response at high temperatures for La0.875Ca0.125FeO3 with an increase of room-temperature relative humidity.

Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions.

PubMed

Kunc, Jan; Hu, Yike; Palmer, James; Guo, Zelei; Hankinson, John; Gamal, Salah H; Berger, Claire; de Heer, Walt A

2014-09-10

A purely planar graphene/SiC field effect transistor is presented here. The horizontal current flow over one-dimensional tunneling barrier between planar graphene contact and coplanar two-dimensional SiC channel exhibits superior on/off ratio compared to conventional transistors employing vertical electron transport. Multilayer epitaxial graphene (MEG) grown on SiC(0001̅) was adopted as the transistor source and drain. The channel is formed by the accumulation layer at the interface of semi-insulating SiC and a surface silicate that forms after high vacuum high temperature annealing. Electronic bands between the graphene edge and SiC accumulation layer form a thin Schottky barrier, which is dominated by tunneling at low temperatures. A thermionic emission prevails over tunneling at high temperatures. We show that neglecting tunneling effectively causes the temperature dependence of the Schottky barrier height. The channel can support current densities up to 35 A/m.

Colossal photo-conductive gain in low temperature processed TiO2 films and their application in quantum dot solar cells

NASA Astrophysics Data System (ADS)

Mandal, Debranjan; Goswami, Prasenjit N.; Rath, Arup K.

2017-03-01

Colloidal quantum dot (QD) solar cells have seen remarkable progress in recent past to reach the certified efficiency of 10.6%. Anatase titanium oxide (TiO2) is a widely studied n-type widow layer for the collection of photogenerated electrons in QD solar cells. Requirement of high temperature (˜500 °C) processing steps proved to be disadvantageous for its applications in flexible solar cells and roll to roll processing, and it also has adverse commercial implications. Here, we report that solar light exposure to low temperature processed (80 °C-150 °C) TiO2 and niobium doped TiO2 films leads to unprecedented enhancement in their electron densities and electron mobilities, which enables them to be used as efficient n-type layers in quantum dot solar cells. Such photoinduced high conducting states in these films show gradual decay over hours after the light bias is taken off and can be retrieved under solar illumination. On the contrary, TiO2 films processed at 500 °C show marginal photo induced enhancements in their characteristics. In bilayer configuration with PbS QDs, photovoltaic devices based on low temperature processed TiO2 films show improved performance over high temperature processed TiO2 films. The stability of photovoltaic devices also improved in low temperature processed TiO2 films under ambient working conditions.

Temperature-dependent band structure of SrTiO3 interfaces

NASA Astrophysics Data System (ADS)

Raslan, Amany; Lafleur, Patrick; Atkinson, W. A.

2017-02-01

We build a theoretical model for the electronic properties of the two-dimensional (2D) electron gas that forms at the interface between insulating SrTiO3 and a number of polar cap layers, including LaTiO3, LaAlO3, and GdTiO3. The model treats conduction electrons within a tight-binding approximation and the dielectric polarization via a Landau-Devonshire free energy that incorporates strontium titanate's strongly nonlinear, nonlocal, and temperature-dependent dielectric response. The self-consistent band structure comprises a mix of quantum 2D states that are tightly bound to the interface and quasi-three-dimensional (3D) states that extend hundreds of unit cells into the SrTiO3 substrate. We find that there is a substantial shift of electrons away from the interface into the 3D tails as temperature is lowered from 300 K to 10 K. This shift is least important at high electron densities (˜1014cm-2 ) but becomes substantial at low densities; for example, the total electron density within 4 nm of the interface changes by a factor of two for 2D electron densities ˜1013cm-2 . We speculate that the quasi-3D tails form the low-density high-mobility component of the interfacial electron gas that is widely inferred from magnetoresistance measurements.

Vacuum low-temperature superconductivity is the essence of superconductivity - Atomic New Theory

NASA Astrophysics Data System (ADS)

Yongquan, Han

2010-10-01

The universe when the temperature closest to the Big Bang the temperature should be nuclear. Because, after the big bang, instant formation of atoms, nuclei and electrons between the absolute vacuum, the nucleus can not emit energy. (Radioactive elements, except in fact, radiation Yuan Su limited power emitted) which causes atomic nuclei and external temperature difference are so enormous that a large temperature difference reasons, all external particles became closer to the nucleus, affect the motion of electrons. When the conductor conductivity and thus affect the conductivity, the formation of resistance. Assumption that no particles affect the motion of electrons (except outside the nucleus) to form a potential difference will not change after the vector form, is now talking about the phenomenon of superconductivity, and then to introduce general, the gap between atoms in molecules or between small, valence electron number of high temperature superconducting conductors. This theory of atomic nuclei, but also explain the atomic and hydrogen bombs can remain after an explosion Why can release enormous energy reasons. Can also explain the ``super flow'' phenomenon. natural world. Tel 13241375685

Investigation of ion and electron heat transport of high- T e ECH heated discharges in the large helical device

DOE PAGES

Pablant, N. A.; Satake, S.; Yokoyama, M.; ...

2016-01-28

An analysis of the radial electric field and heat transport, both for ions and electrons, is presented for a high-more » $${{T}_{\\text{e}}}$$ electron cyclotron heated (ECH) discharge on the large helical device (LHD). Transport analysis is done using the task3d transport suite utilizing experimentally measured profiles for both ions and electrons. Ion temperature and perpendicular flow profiles are measured using the recently installed x-ray imaging crystal spectrometer diagnostic (XICS), while electron temperature and density profiles are measured using Thomson scattering. The analysis also includes calculated ECH power deposition profiles as determined through the travis ray-tracing code. This is the first time on LHD that this type of integrated transport analysis with measured ion temperature profiles has been performed without NBI, allowing the heat transport properties of plasmas with only ECH heating to be more clearly examined. For this study, a plasma discharge is chosen which develops a high central electron temperature ($${{T}_{\\text{eo}}}=9$$ keV) at moderately low densities ($${{n}_{\\text{eo}}}=1.5\\times {{10}^{19}}$$ m-3). The experimentally determined transport properties from task3d are compared to neoclassical predictions as calculated by the gsrake and fortec-3d codes. The predicted electron fluxes are seen to be an order of magnitude less than the measured fluxes, indicating that electron transport is largely anomalous, while the neoclassical and measured ion heat fluxes are of the same magnitude. Neoclassical predictions of a strong positive ambipolar electric field ($${{E}_{\\text{r}}}$$ ) in the plasma core are validated through comparisons to perpendicular flow measurements from the XICS diagnostic. Furthermore, this provides confidence that the predictions are producing physically meaningful results for the particle fluxes and radial electric field, which are a key component in correctly predicting plasma confinement.« less

Electronic Ambient-Temperature Recorder

NASA Technical Reports Server (NTRS)

Russell, Larry; Barrows, William

1995-01-01

Electronic temperature-recording unit stores data in internal memory for later readout. Records temperatures from minus 40 degrees to plus 60 degrees C at intervals ranging from 1.875 to 15 minutes. With all four data channels operating at 1.875-minute intervals, recorder stores at least 10 days' data. For only one channel at 15-minute intervals, capacity extends to up to 342 days' data. Developed for recording temperatures of instruments and life-science experiments on satellites, space shuttle, and high-altitude aircraft. Adaptable to such terrestrial uses as recording temperatures of perishable goods during transportation and of other systems or processes over long times. Can be placed directly in environment to monitor.

Review of deformation behavior of tungsten at temperature less than 0.2 absolute melting temperature

NASA Technical Reports Server (NTRS)

Stephens, J. R.

1972-01-01

The deformation behavior of tungsten at temperatures 0.2 T sub m is reviewed, with primary emphasis on the temperature dependence of the yield stress and the ductile-brittle transition temperature. It appears that a model based on the high Peierls stress of tungsten best accounts for the observed mechanical behavior at low temperatures. Recent research is discussed which suggests an important role of electron concentration and bonding on the mechanical behavior of tungsten. It is concluded that future research on tungsten should include studies to define more clearly the correlation between electron concentration and mechanical behavior of tungsten alloys and other transition metal alloys.

Low-temperature creation of Frenkel defects via hot electron-hole recombination in highly pure NaCl single crystals

NASA Astrophysics Data System (ADS)

Lushchik, A.; Lushchik, Ch.; Nagirnyi, V.; Shablonin, E.; Vasil'chenko, E.

2016-07-01

The creation spectrum of stable F centres (being part of F-H pairs of Frenkel defects) by synchrotron radiation of 7-40 eV has been measured for highly pure NaCl single crystals at 12 K using a highly sensitive luminescent method. It is shown that the efficiency of F centre creation in a closely packed NaCl is low at the decay of anion or cation excitons (7.8-8.4 and 33.4 eV, respectively) or at the recombination of relaxed conduction electrons and valence holes. Only the recombination of nonrelaxed (hot) electrons with holes provides the energy exceeding threshold value EFD, which is sufficient for the creation of Frenkel defects at low temperature.

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE PAGES

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.; ...

2017-08-01

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

Reliability of High I/O High Density CCGA Interconnect Electronic Packages under Extreme Thermal Environment

NASA Technical Reports Server (NTRS)

Ramesham, Rajeshuni

2012-01-01

This paper provides the experimental test results of advanced CCGA packages tested in extreme temperature thermal environments. Standard optical inspection and x-ray non-destructive inspection tools were used to assess the reliability of high density CCGA packages for deep space extreme temperature missions. Ceramic column grid array (CCGA) packages have been increasing in use based on their advantages such as high interconnect density, very good thermal and electrical performances, compatibility with standard surface-mount packaging assembly processes, and so on. CCGA packages are used in space applications such as in logic and microprocessor functions, telecommunications, payload electronics, and flight avionics. As these packages tend to have less solder joint strain relief than leaded packages or more strain relief over lead-less chip carrier packages, the reliability of CCGA packages is very important for short-term and long-term deep space missions. We have employed high density CCGA 1152 and 1272 daisy chained electronic packages in this preliminary reliability study. Each package is divided into several daisy-chained sections. The physical dimensions of CCGA1152 package is 35 mm x 35 mm with a 34 x 34 array of columns with a 1 mm pitch. The dimension of the CCGA1272 package is 37.5 mm x 37.5 mm with a 36 x 36 array with a 1 mm pitch. The columns are made up of 80% Pb/20%Sn material. CCGA interconnect electronic package printed wiring polyimide boards have been assembled and inspected using non-destructive x-ray imaging techniques. The assembled CCGA boards were subjected to extreme temperature thermal atmospheric cycling to assess their reliability for future deep space missions. The resistance of daisy-chained interconnect sections were monitored continuously during thermal cycling. This paper provides the experimental test results of advanced CCGA packages tested in extreme temperature thermal environments. Standard optical inspection and x-ray non-destructive inspection tools were used to assess the reliability of high density CCGA packages for deep space extreme temperature missions. Keywords: Extreme temperatures, High density CCGA qualification, CCGA reliability, solder joint failures, optical inspection, and x-ray inspection.

Modeling and Optimization of a High-Tc Hot-Electron Superconducting Mixer for Terahertz Applicaitons

NASA Technical Reports Server (NTRS)

Karasik, B. S.; McGrath, W. R.; Gaidis, M. C.; Burns, M. J.; Kleinsasser, A. W.; Delin, K. A.; Vasquez, R. P.

1996-01-01

The development of a YBa(sub 2)Cu(sub 3)O(sub 7-(kronecker delta))(YBCO) hot-electron bolometer (HEB) quasioptical mixer for a 2.5 heterodyne receiver is discussed. The modeled device is a submicron bridge made from a 10 nm thick film on a high thermal conductance substrate. The mixer performance expected for this device is analyzed in the framework of a two-temperature model which includes heating both of the electrons and the lattice. Also, the contribution of heat diffusion from the film through the substrate and from the film to the normal metal contacts is evaluated....a single sideband temperature of less than 2000k is predicted.

Experimental evaluation of cooling efficiency of the high performance cooling device

NASA Astrophysics Data System (ADS)

Nemec, Patrik; Malcho, Milan

2016-06-01

This work deal with experimental evaluation of cooling efficiency of cooling device capable transfer high heat fluxes from electric elements to the surrounding. The work contain description of cooling device, working principle of cooling device, construction of cooling device. Experimental part describe the measuring method of device cooling efficiency evaluation. The work results are presented in graphic visualization of temperature dependence of the contact area surface between cooling device evaporator and electronic components on the loaded heat of electronic components in range from 250 to 740 W and temperature dependence of the loop thermosiphon condenser surface on the loaded heat of electronic components in range from 250 to 740 W.

Dynamics of High Temperature Plasmas.

DTIC Science & Technology

1985-10-01

25 VI. > LASER BEAT WAVE PARTICLE ACCELERATION-.. ..... .. 27 ,, VII. ORBITRON MASER DESIGN .. ..... ............. 30 0 VIIM> ELECTRON BEAM STABILITY...IN THE MODIFIED BETATRON .... ............ 32 IX. * RELATIVISTIC ELECTRON BEAM DIODE DESIGN . . . . 35 X. FREE ELECTRON LASER APPLICATION TO XUV...Accelerators (B), VI. Laser Beat Wave Particle Acceleration, VII. Orbitron Maser Design , VIII. Electron Beam Stability in the Modified Betatron, IX

Nuclear spin polarized H and D by means of spin-exchange optical pumping

NASA Astrophysics Data System (ADS)

Stenger, Jörn; Grosshauser, Carsten; Kilian, Wolfgang; Nagengast, Wolfgang; Ranzenberger, Bernd; Rith, Klaus; Schmidt, Frank

1998-01-01

Optically pumped spin-exchange sources for polarized hydrogen and deuterium atoms have been demonstrated to yield high atomic flow and high electron spin polarization. For maximum nuclear polarization the source has to be operated in spin temperature equilibrium, which has already been demonstrated for hydrogen. In spin temperature equilibrium the nuclear spin polarization PI equals the electron spin polarization PS for hydrogen and is even larger than PS for deuterium. We discuss the general properties of spin temperature equilibrium for a sample of deuterium atoms. One result are the equations PI=4PS/(3+PS2) and Pzz=PSṡPI, where Pzz is the nuclear tensor polarization. Furthermore we demonstrate that the deuterium atoms from our source are in spin temperature equilibrium within the experimental accuracy.

Development of solution-processed nanowire composites for opto-electronics

DOE PAGES

Ginley, David S.; Aggarwal, Shruti; Singh, Rajiv; ...

2016-12-20

Here, silver nanowire-based contacts represent one of the major new directions in transparent contacts for opto-electronic devices with the added advantage that they can have Indium-Tin-Oxide-like properties at substantially reduced processing temperatures and without the use of vacuum-based processing. However, nanowires alone often do not adhere well to the substrate or other film interfaces; even after a relatively high-temperature anneal and unencapsulated nanowires show environmental degradation at high temperature and humidity. Here we report on the development of ZnO/Ag-nanowire composites that have sheet resistance below 10 Ω/sq and >90% transmittance from a solution-based process with process temperatures below 200 °C.more » These films have significant applications potential in photovoltaics and displays.« less

Calculation of Half-Metal, Debye and Curie Temperatures of Co2VAl Compound: First Principles Study

NASA Astrophysics Data System (ADS)

Arash, Boochani; Heidar, Khosravi; Jabbar, Khodadadi; Shahram, Solaymani; Masoud Majidiyan, Sarmazdeh; Rohollah Taghavi, Mendi; Sayed, Mohammad Elahi

2015-05-01

By FP-LAPW calculations, the structural, elastic, Debye and Curie temperatures, electronic and magnetic properties of Co2 VAl are investigated. The results indicate that Ferromagnetic (FM) phase is more stable than Anti-Ferromagnetic (AFM) and Non-magnetic (NM) ones. In addition, C11-C12 > 0, C44 > 0, and B > 0 so Co2VAl is an elastically stable material with high Debye temperature. Also, the B/G ratio exhibits a ductility behavior. The relatively high Curie temperature provides it as a favorable material for spintronic application. It's electronic and magnetic properties are studied by GGA+U approach leading to a 100% spin polarization at Fermi level. Supported by the simulation of Nano Physics Lab center of Kermanshah Branch, Islamic Azad University

The effect of safety factor profile on transport in steady-state, high-performance scenarios

DOE PAGES

Holcomb, C. T.; Ferron, J. R.; Luce, T. C.; ...

2012-03-09

In this study, an analysis of the dependence of transport on the safety factor profile in high-performance, steady-state scenario discharges is presented. This is based on experimental scans of q 95 and q min taken with fixed β N, toroidal field, double-null plasma shape, divertor pumping, and electron cyclotron current drive input. The temperature and thermal diffusivity profiles were found to vary considerably with the q-profile, and these variations were significantly different for electrons and ions. With fixed q 95, both temperature profiles increase and broaden as q min is increased and the magnetic shear becomes low or negative inmore » the inner half radius, but these temperature profile changes are stronger for the electrons. Power balance calculations show the peak in the ion thermal diffusivity (χ i) at ρ – 0.6 – 0.8 increases with q 95 or q min.« less

Silicon-On-Insulator (SOI) Devices and Mixed-Signal Circuits for Extreme Temperature Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

2008-01-01

Electronic systems in planetary exploration missions and in aerospace applications are expected to encounter extreme temperatures and wide thermal swings in their operational environments. Electronics designed for such applications must, therefore, be able to withstand exposure to extreme temperatures and to perform properly for the duration of the missions. Electronic parts based on silicon-on-insulator (SOI) technology are known, based on device structure, to provide faster switching, consume less power, and offer better radiation-tolerance compared to their silicon counterparts. They also exhibit reduced current leakage and are often tailored for high temperature operation. However, little is known about their performance at low temperature. The performance of several SOI devices and mixed-signal circuits was determined under extreme temperatures, cold-restart, and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of these devices for use in space exploration missions under extreme temperatures. The experimental results obtained on selected SOI devices are presented and discussed in this paper.

Monte-Carlo modelling of nano-material photocatalysis: bridging photocatalytic activity and microscopic charge kinetics.

PubMed

Liu, Baoshun

2016-04-28

In photocatalysis, it is known that light intensity, organic concentration, and temperature affect the photocatalytic activity by changing the microscopic kinetics of holes and electrons. However, how the microscopic kinetics of holes and electrons relates to the photocatalytic activity was not well known. In the present research, we developed a Monte-Carlo random walking model that involved all of the charge kinetics, including the photo-generation, the recombination, the transport, and the interfacial transfer of holes and electrons, to simulate the overall photocatalytic reaction, which we called a "computer experiment" of photocatalysis. By using this model, we simulated the effect of light intensity, temperature, and organic surface coverage on the photocatalytic activity and the density of the free electrons that accumulate in the simulated system. It was seen that the increase of light intensity increases the electron density and its mobility, which increases the probability for a hole/electron to find an electron/hole for recombination, and consequently led to an apparent kinetics that the quantum yield (QY) decreases with the increase of light intensity. It was also seen that the increase of organic surface coverage could increase the rate of hole interfacial transfer and result in the decrease of the probability for an electron to recombine with a hole. Moreover, the increase of organic coverage on the nano-material surface can also increase the accumulation of electrons, which enhances the mobility for electrons to undergo interfacial transfer, and finally leads to the increase of photocatalytic activity. The simulation showed that the temperature had a more complicated effect, as it can simultaneously change the activation of electrons, the interfacial transfer of holes, and the interfacial transfer of electrons. It was shown that the interfacial transfer of holes might play a main role at low temperature, with the temperature-dependence of QY conforming to the Arrhenius model. The activation of electrons from the traps to the conduction band might become important at high temperature, which accelerates the electron movement for recombination and leads to a temperature dependence of QY that deviates from the Arrhenius model.

Effects of discharge chamber length on the negative ion generation in volume-produced negative hydrogen ion source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chung, Kyoung-Jae; Jung, Bong-Ki; An, YoungHwa

2014-02-15

In a volume-produced negative hydrogen ion source, control of electron temperature is essential due to its close correlation with the generation of highly vibrationally excited hydrogen molecules in the heating region as well as the generation of negative hydrogen ions by dissociative attachment in the extraction region. In this study, geometric effects of the cylindrical discharge chamber on negative ion generation via electron temperature changes are investigated in two discharge chambers with different lengths of 7.5 cm and 11 cm. Measurements with a radio-frequency-compensated Langmuir probe show that the electron temperature in the heating region is significantly increased by reducingmore » the length of the discharge chamber due to the reduced effective plasma size. A particle balance model which is modified to consider the effects of discharge chamber configuration on the plasma parameters explains the variation of the electron temperature with the chamber geometry and gas pressure quite well. Accordingly, H{sup −} ion density measurement with laser photo-detachment in the short chamber shows a few times increase compared to the longer one at the same heating power depending on gas pressure. However, the increase drops significantly as operating gas pressure decreases, indicating increased electron temperatures in the extraction region degrade dissociative attachment significantly especially in the low pressure regime. It is concluded that the increase of electron temperature by adjusting the discharge chamber geometry is efficient to increase H{sup −} ion production as long as low electron temperatures are maintained in the extraction region in volume-produced negative hydrogen ion sources.« less

HITRAP: A Facility for Experiments with Trapped Highly Charged Ions

NASA Astrophysics Data System (ADS)

Quint, W.; Dilling, J.; Djekic, S.; Häffner, H.; Hermanspahn, N.; Kluge, H.-J.; Marx, G.; Moore, R.; Rodriguez, D.; Schönfelder, J.; Sikler, G.; Valenzuela, T.; Verdú, J.; Weber, C.; Werth, G.

2001-01-01

HITRAP is a planned ion trap facility for capturing and cooling of highly charged ions produced at GSI in the heavy-ion complex of the UNILAC-SIS accelerators and the ESR storage ring. In this facility heavy highly charged ions up to uranium will be available as bare nuclei, hydrogen-like ions or few-electron systems at low temperatures. The trap for receiving and studying these ions is designed for operation at extremely high vacuum by cooling to cryogenic temperatures. The stored highly charged ions can be investigated in the trap itself or can be extracted from the trap at energies up to about 10 keV/q. The proposed physics experiments are collision studies with highly charged ions at well-defined low energies (eV/u), high-accuracy measurements to determine the g-factor of the electron bound in a hydrogen-like heavy ion and the atomic binding energies of few-electron systems, laser spectroscopy of HFS transitions and X-ray spectroscopy.

Direct observation of how the heavy-fermion state develops in CeCoIn5

NASA Astrophysics Data System (ADS)

Chen, Q. Y.; Xu, D. F.; Niu, X. H.; Jiang, J.; Peng, R.; Xu, H. C.; Wen, C. H. P.; Ding, Z. F.; Huang, K.; Shu, L.; Zhang, Y. J.; Lee, H.; Strocov, V. N.; Shi, M.; Bisti, F.; Schmitt, T.; Huang, Y. B.; Dudin, P.; Lai, X. C.; Kirchner, S.; Yuan, H. Q.; Feng, D. L.

2017-07-01

Heavy-fermion systems share some of the strange metal phenomenology seen in other unconventional superconductors, providing a unique opportunity to set strange metals in a broader context. Central to understanding heavy-fermion systems is the interplay of localization and itinerancy. These materials acquire high electronic masses and a concomitant Fermi volume increase as the f electrons delocalize at low temperatures. However, despite the wide-spread acceptance of this view, a direct microscopic verification has been lacking. Here we report high-resolution angle-resolved photoemission measurements on CeCoIn5, a prototypical heavy-fermion compound, which spectroscopically resolve the development of band hybridization and the Fermi surface expansion over a wide temperature region. Unexpectedly, the localized-to-itinerant transition occurs at surprisingly high temperatures, yet f electrons are still largely localized even at the lowest temperature. These findings point to an unanticipated role played by crystal-field excitations in the strange metal behavior of CeCoIn5. Our results offer a comprehensive experimental picture of the heavy-fermion formation, setting the stage for understanding the emergent properties, including unconventional superconductivity, in this and related materials.

Analysis of composition and microstructures of Ge grown on porous silicon using Raman spectroscopy and transmission electron microscopy

NASA Astrophysics Data System (ADS)

Aouassa, Mansour; Jadli, Imen; Hassayoun, Latifa Slimen; Maaref, Hassen; Panczer, Gerard; Favre, Luc; Ronda, Antoine; Berbezier, Isabelle

2017-12-01

Composition and microstructure of Ge grown on porous silicon (PSi) by Molecular Beam Epitaxy (MBE) at different temperatures are examined using High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy. Ge grown at 400 °C on PSi buffer produces a planar Ge film with high crystalline quality compared to Ge grown on bulk Si. This result is attributed to the compliant nature of PSi. Increasing growth temperature >600 °C, changes the PSi morphology, increase the Ge/Si intermixing in the pores during Ge growth and lead to obtain a composite SiGe/Si substrate. Ge content in the composite SiGe substrate can controlled via growth temperature. These substrates serve as low cost virtual substrate for high efficiency III-V/Si solar cells.

Promising thermoelectric properties of phosphorenes.

PubMed

Sevik, Cem; Sevinçli, Hâldun

2016-09-02

Electronic, phononic, and thermoelectric transport properties of single layer black- and blue-phosphorene structures are investigated with first-principles based ballistic electron and phonon transport calculations employing hybrid functionals. The maximum values of room temperature thermoelectric figure of merit, ZT corresponding to armchair and zigzag directions of black-phosphorene, ∼0.5 and ∼0.25, are calculated as rather smaller than those obtained with first-principles based semiclassical Boltzmann transport theory calculations. On the other hand, the maximum value of room temperature ZT of blue-phosphorene is predicted to be substantially high and remarkable values as high as 2.5 are obtained for elevated temperatures. Besides the fact that these figures are obtained at the ballistic limit, our findings mark the strong possibility of high thermoelectric performance of blue-phosphorene in new generation thermoelectric applications.

Temperature-induced band shift in bulk γ-InSe by angle-resolved photoemission spectroscopy

NASA Astrophysics Data System (ADS)

Xu, Huanfeng; Wang, Wei; Zhao, Yafei; Zhang, Xiaoqian; Feng, Yue; Tu, Jian; Gu, Chenyi; Sun, Yizhe; Liu, Chang; Nie, Yuefeng; Edmond Turcu, Ion C.; Xu, Yongbing; He, Liang

2018-05-01

Indium selenide (InSe) has recently become popular research topics because of its unique layered crystal structure, direct band gap and high electron mobilities. In this work, we have acquired the electronic structure of bulk γ-InSe at various temperatures using angle-resolved photoemission spectroscopy (ARPES). We have also found that as the temperature decreases, the valence bands of γ-InSe exhibit a monotonic shift to lower binding energies. This band shift is attributed to the change of lattice parameters and has been validated by variable temperature X-ray diffraction measurements and theoretical calculations.

Temperature-dependent change in the nature of glass fracture under electron bombardment

NASA Astrophysics Data System (ADS)

Kravchenko, A. A.

1991-04-01

We report the experimental discovery of a temperature-dependent change in the nature of glass fracture under low-energy (<10 keV) electron bombardment. This is shown to depend on the transition from the thermal-shock to the thermalfluctuation mechanism of fracture at the limiting temperature T1 = (Tg - 150) °C. The high-temperature cleavage fracture of K8 and TF1 glasses was studied and the threshold value of the critical power initiating cleavage fracture was determined (for the glasses studied Θthr = 50 70 W·sec·cm-2).

Room-temperature semiconductor heterostructure refrigeration

NASA Astrophysics Data System (ADS)

Chao, K. A.; Larsson, Magnus; Mal'shukov, A. G.

2005-07-01

With the proper design of semiconductor tunneling barrier structures, we can inject low-energy electrons via resonant tunneling, and take out high-energy electrons via a thermionic process. This is the operation principle of our semiconductor heterostructure refrigerator (SHR) without the need of applying a temperature gradient across the device. Even for the bad thermoelectric material AlGaAs, our calculation shows that at room temperature, the SHR can easily lower the temperature by 5-7K. Such devices can be fabricated with the present semiconductor technology. Besides its use as a kitchen refrigerator, the SHR can efficiently cool microelectronic devices.

High temperature specifically affects the photoprotective responses of chlorophyll b-deficient wheat mutant lines.

PubMed

Brestic, Marian; Zivcak, Marek; Kunderlikova, Kristyna; Allakhverdiev, Suleyman I

2016-12-01

The effects of high temperature on CO 2 assimilation rate, processes associated with photosynthetic electron and proton transport, as well as photoprotective responses, were studied in chlorophyll b-deficient mutant lines (ANK-32A and ANK-32B) and wild type (WT) of wheat (Triticum aestivum L.). Despite the low chlorophyll content and chlorophyll a-to-b ratio, the non-stressed mutant plants had the similar level of CO 2 assimilation and photosynthetic responses as WT. However, in ANK mutant plants exposed to prolonged high temperature episode (42 °C for ~10 h), we observed lower CO 2 assimilation compared to WT, especially when a high CO 2 supply was provided. In all heat-exposed plants, we found approximately the same level of PSII photoinhibition, but the decrease in content of photooxidizable PSI was higher in ANK mutant plants compared to WT. The PSI damage can be well explained by the level of overreduction of PSI acceptor side observed in plants exposed to high temperature, which was, in turn, the result of the insufficient transthylakoid proton gradient associated with low non-photochemical quenching and lack of ability to downregulate the linear electron transport to keep the reduction state of PSI acceptor side low enough. Compared to WT, the ANK mutant lines had lower capacity to drive the cyclic electron transport around PSI in moderate and high light; it confirms the protective role of cyclic electron transport for the protection of PSI against photoinhibition. Our results, however, also suggest that the inactivation of PSI in heat stress conditions can be the protective mechanism against photooxidative damage of chloroplast and cell structures.

Surface microstructure and high temperature corrosion resistance of arc-sprayed FeCrAl coating irradiated by high current pulsed electron beam

NASA Astrophysics Data System (ADS)

Hao, Shengzhi; Zhao, Limin; He, Dongyun

2013-10-01

The surface microstructure of arc-sprayed FeCrAl coating irradiated by high current pulsed electron beam (HCPEB) with long pulse duration of 200 μs was characterized by using optical microscopy, scanning electron microscopy and X-ray diffractometry. The distribution of chemical composition in modified surface layer was measured with electron probe micro-analyzer. The high temperature corrosion resistance of FeCrAl coating was tested in a saturated Na2SO4 and K2SO4 solution at 650 °C. After HCPEB irradiation, the coarse surface of arc-sprayed coating was changed as discrete bulged nodules with smooth and compact appearance. When using low energy density of 20 J/cm2, the surface modified layer was continuous entirely with an average melting depth of ˜30 μm. In the surface remelted layer, Fe and Cr elements gave a uniform distribution, while Al and O elements agglomerated particularly at the concave part between nodule structures to form α-Al2O3 phase. After high temperature corrosion tests, the FeCrAl coating treated with HCPEB of 20 J/cm2 remained a glossy surface with weight increment of ˜51 mg/cm2, decreased by 20% as compared to the initial sample. With the increasing energy density of HCPEB irradiation, the integrity of surface modified layer got segmented due to the formation of larger bulged nodules and cracks at the concave parts. For the HCPEB irradiation of 40 J/cm2, the high temperature corrosion resistance of FeCrAl coating was deteriorated drastically.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fukao, Shinji; Nakanishi, Yoshikazu; Mizoguchi, Tadahiro

X-rays are radiated due to the bremsstrahlung caused by the collision of electrons with a metal target placed opposite the negative electric surface of a crystal by changing the temperature of a LiNbO{sub 3} single crystal uniaxially polarized in the c-axis direction. It is suggested that both electric field intensity and electron density determine the intensity of X-ray radiation. Electrons are supplied by the ionization of residual gas in space, field emission from a case inside which a crystal is located, considered to be due to the high electric-field intensity formed by the surface charges on the crystal, and anmore » external electron source, such as a thermionic source. In a high vacuum, it was found that the electrons supplied by electric-field emission mainly contribute to the radiation of X-rays. It was found that the integrated intensity of X-rays can be maximized by supplying electrons both external and by electric-field emission. Furthermore, the integrated intensity of the X-rays is stable for many repeated temperature changes.« less

Characterization of the fast electrons distribution produced in a high intensity laser target interaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Westover, B.; Lawrence Livermore National Laboratory, Livermore, California 94550; Chen, C. D.

2014-03-15

Experiments on the Titan laser (∼150 J, 0.7 ps, 2 × 10{sup 20} W cm{sup −2}) at the Lawrence Livermore National Laboratory were carried out in order to study the properties of fast electrons produced by high-intensity, short pulse laser interacting with matter under conditions relevant to Fast Ignition. Bremsstrahlung x-rays produced by these fast electrons were measured by a set of compact filter-stack based x-ray detectors placed at three angles with respect to the target. The measured bremsstrahlung signal allows a characterization of the fast electron beam spectrum, conversion efficiency of laser energy into fast electron kinetic energy and angular distribution. A Monte Carlo codemore » Integrated Tiger Series was used to model the bremsstrahlung signal and infer a laser to fast electron conversion efficiency of 30%, an electron slope temperature of about 2.2 MeV, and a mean divergence angle of 39°. Simulations were also performed with the hybrid transport code ZUMA which includes fields in the target. In this case, a conversion efficiency of laser energy to fast electron energy of 34% and a slope temperature between 1.5 MeV and 4 MeV depending on the angle between the target normal direction and the measuring spectrometer are found. The observed temperature of the bremsstrahlung spectrum, and therefore the inferred electron spectrum are found to be angle dependent.« less

Highly Efficient Flexible Quantum Dot Solar Cells with Improved Electron Extraction Using MgZnO Nanocrystals.

PubMed

Zhang, Xiaoliang; Santra, Pralay Kanti; Tian, Lei; Johansson, Malin B; Rensmo, Håkan; Johansson, Erik M J

2017-08-22

Colloidal quantum dot (CQD) solar cells have high potential for realizing an efficient and lightweight energy supply for flexible or wearable electronic devices. To achieve highly efficient and flexible CQD solar cells, the electron transport layer (ETL), extracting electrons from the CQD solid layer, needs to be processed at a low-temperature and should also suppress interfacial recombination. Herein, a highly stable MgZnO nanocrystal (MZO-NC) layer is reported for efficient flexible PbS CQD solar cells. Solar cells fabricated with MZO-NC ETL give a high power conversion efficiency (PCE) of 10.4% and 9.4%, on glass and flexible plastic substrates, respectively. The reported flexible CQD solar cell has the record efficiency to date of flexible CQD solar cells. Detailed theoretical simulations and extensive characterizations reveal that the MZO-NCs significantly enhance charge extraction from CQD solids and diminish the charge accumulation at the ETL/CQD interface, suppressing charge interfacial recombination. These important results suggest that the low-temperature processed MZO-NCs are very promising for use in efficient flexible solar cells or other flexible optoelectronic devices.

Tuning charge transport in pentacene thin-film transistors using the strain-induced electron-phonon coupling modification

NASA Astrophysics Data System (ADS)

Lin, Yow-Jon; Chang, Hsing-Cheng; Liu, Day-Shan

2015-03-01

Tuning charge transport in the bottom-contact pentacene-based organic thin-film transistors (OTFTs) using a MoO x capping layer that serves to the electron-phonon coupling modification is reported. For OTFTs with a MoO x front gate, the enhanced field-effect carrier mobility is investigated. The time domain data confirm the electron-trapping model. To understand the origin of a mobility enhancement, an analysis of the temperature-dependent Hall-effect characteristics is presented. Similarly, the Hall-effect carrier mobility was dramatically increased by capping a MoO x layer on the pentacene front surface. However, the carrier concentration is not affected. The Hall-effect carrier mobility exhibits strong temperature dependence, indicating the dominance of tunneling (hopping) at low (high) temperatures. A mobility enhancement is considered to come from the electron-phonon coupling modification that results from the contribution of long-lifetime electron trapping.

The electronic properties of high (Tc) superconductors probed by positron annihilation

NASA Astrophysics Data System (ADS)

Sundar, C. S.; Bharathi, A.; Jean, Y. C.; Hinks, D. G.; Dabrowski, B.; Zheng, Y.; Mitchell, A. W.; Ho, J. C.; Howell, K. H.; Wachs, A. L.

1989-06-01

The discovery of superconductivity at 30 K in Ba(.6)K(.4) BiO3 has generated considerable excitement in view of the contrasting properties of the Ba-K-Bi-O system when compared to the well known Cu-O based high temperature superconductors. Positron annihilation spectroscopy, which is a sensitive local probe of the electronic and defect properties of a solid, was extensively applied in the study of Cu-O based superconductors. The results of positron lifetime as a function of temperature in Ba-K-Bi-O are presented and compared with the known results in the cuprate superconductors. Plausible reasons for the observed temperature dependence of positron lifetime are presented.

Thermal and Optical Activation Mechanisms of Nanospring-Based Chemiresistors

PubMed Central

Dobrokhotov, Vladimir; Oakes, Landon; Sowell, Dewayne; Larin, Alexander; Hall, Jessica; Barzilov, Alexander; Kengne, Alex; Bakharev, Pavel; Corti, Giancarlo; Cantrell, Timothy; Prakash, Tej; Williams, Joseph; Bergman, Leah; Huso, Jesse; McIlroy, David

2012-01-01

Chemiresistors (conductometric sensor) were fabricated on the basis of novel nanomaterials—silica nanosprings ALD coated with ZnO. The effects of high temperature and UV illumination on the electronic and gas sensing properties of chemiresistors are reported. For the thermally activated chemiresistors, a discrimination mechanism was developed and an integrated sensor-array for simultaneous real-time resistance scans was built. The integrated sensor response was tested using linear discriminant analysis (LDA). The distinguished electronic signatures of various chemical vapors were obtained at ppm level. It was found that the recovery rate at high temperature drastically increases upon UV illumination. The feasibility study of the activation method by UV illumination at room temperature was conducted. PMID:22778604

Packaging Technologies for High Temperature Electronics and Sensors

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Beheim, Glenn M.; Spry, David J.; Meredith, Roger D.

2013-01-01

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500 C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550 C. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500 C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500 C are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

Packaging Technologies for High Temperature Electronics and Sensors

NASA Technical Reports Server (NTRS)

Chen, Liangyu; Hunter, Gary W.; Neudeck, Philip G.; Beheim, Glenn M.; Spry, David J.; Meredith, Roger D.

2013-01-01

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500degC silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chiplevel packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550degC. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500degC for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500degC are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

Growth behavior of carbon nanotubes on multilayered metal catalyst film (Al/Fe/Mo) in chemical vapor deposition

NASA Astrophysics Data System (ADS)

Cui, H.; Eres, G.; Howe, J. Y.; Puretzky, A.; Varela, M.; Geohegan, D. B.; Lowndes, D. H.

2003-03-01

The temperature- and time- dependences of carbon nanotube (CNT) growth by chemical vapor deposition are studied using a multilayered Al/Fe/Mo catalyst on silicon substrates. Within the 600 - 1100 ^oC temperature range in these studies, narrower temperature ranges were determined for the growth of aligned multi-walled carbon nanotubes (MWCNTs) and single-walled carbon nanotubes (SWCNTs). Aligned MWCNT growth is favored at lower temperatures ( ˜700 ^oC). At 900 ^oC, in contrast to earlier work, double-walled carbon nanotubes (DWCNTs) are found more abundant than SWCNTs. At further elevated temperature, highly defective carbon structures are produced. Defects also are found to accumulate faster than the ordered graphitic structure if the growth of CNTs is extended to long growth durations. Atomic force microscopy, field emission scanning electron microscopy, high resolution transmission electron microscopy, and Raman spectroscopy are used to characterize the catalyst and various types of CNTs.

Principle of radial transport in low temperature annular plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yunchao, E-mail: yunchao.zhang@anu.edu.au; Charles, Christine; Boswell, Rod

2015-07-15

Radial transport in low temperature annular plasmas is investigated theoretically in this paper. The electrons are assumed to be in quasi-equilibrium due to their high temperature and light inertial mass. The ions are not in equilibrium and their transport is analyzed in three different situations: a low electric field (LEF) model, an intermediate electric field (IEF) model, and a high electric field (HEF) model. The universal IEF model smoothly connects the LEF and HEF models at their respective electric field strength limits and gives more accurate results of the ion mobility coefficient and effective ion temperature over the entire electricmore » field strength range. Annular modelling is applied to an argon plasma and numerical results of the density peak position, the annular boundary loss coefficient and the electron temperature are given as functions of the annular geometry ratio and Paschen number.« less

Small temperature coefficient of resistivity of graphene/graphene oxide hybrid membranes.

PubMed

Sun, Pengzhan; Zhu, Miao; Wang, Kunlin; Zhong, Minlin; Wei, Jinquan; Wu, Dehai; Zhu, Hongwei

2013-10-09

Materials with low temperature coefficient of resistivity (TCR) are of great importance in some areas, for example, highly accurate electronic measurement instruments and microelectronic integrated circuits. In this work, we demonstrated the ultrathin graphene-graphene oxide (GO) hybrid films prepared by layer-by-layer assembly with very small TCR (30-100 °C) in the air. Electrical response of the hybrid films to temperature variation was investigated along with the progressive reduction of GO sheets. The mechanism of electrical response to temperature variation of the hybrid film was discussed, which revealed that the interaction between graphene and GO and the chemical doping effect were responsible for the tunable control of its electrical response to temperature variation. The unique properties of graphene-GO hybrid film made it a promising candidate in many areas, such as high-end film electronic device and sensor applications.

Analysis of hydrogen plasma in MPCVD reactor

NASA Astrophysics Data System (ADS)

Shivkumar, Gayathri

The aim of this work is to build a numerical model that can predict the plasma properties of hydrogen plasmas inside a Seki Technotron Corp. AX5200S MPCVD system so that it may be used to understand and optimize the conditions for the growth of carbon nanostructures. A 2D model of the system is used in the finite element high frequency Maxwell solver and heat trasfer solver in COMSOL Multiphysics, where the solvers are coupled with user defined functions to analyze the plasma. A simplified chemistry model is formulated in order to determine the electron temperature in the plasma. This is used in the UDFs which calculate the electron number density as well as electron temperature. A Boltzmann equation solver for electrons in weakly ionized gases under uniform electric fields, called BOLSIG+, is used to obtain certain input parameters required for these UDFs. The system is modeled for several reactor geometries at pressures of 10 Torr and 30 Torr and powers ranging from 300 W to 700 W. The variation of plasma characteristics with changes in input conditions is studied and the electric field, electron number density, electron temperature and gas temperature are seen to increase with increasing power. Electric field, electron number density and electron temperature decrease and gas temperature increases with increasing pressure. The modeling results are compared with experimental measurements and a good agreement is found after calibrating the parameter gamma in Funer's model to match experimental electron number densities. The gas temperature is seen to have a weak dependence on power and a strong dependence on gas pressure. On an average, the gas temperature at a point 5 mm above the center of the puck increases from about 1000 K at a pressure of 10 Torr to about 1500 K at 30 Torr. The inclusion of the pillar produces an increase in the maximum electron number density of approximately 50%; it is higher under some conditions. It increases the maximum electron temperature by about 70% and at 500 W and 30 Torr, the maximum gas temperature is seen to increase by 50%. The effect of susceptor position is studied and it is seen that the only condition favorable to growth would be to raise it by less than 25 mm from the initial reference position or to maintain it at the same level.

High temperature irradiation induced creep in Ag nanopillars measured via in situ transmission electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jawaharram, Gowtham Sriram; Price, Patrick M.; Barr, Christopher M.

Irradiation induced creep (IIC) rates are measured in compression on Ag nanopillar (square) beams in the sink-limited regime. The IIC rate increases linearly with stress at lower stresses, i.e. below ≈2/3 the high temperature yield stress and parabolically with pillar width, L, for L less than ≈300 nm. Here, the data are obtained by combining in situ transmission electron imaging with simultaneous ion irradiation, laser heating, and nanopillar compression. Results in the larger width regime are consistent with prior literature.

High temperature irradiation induced creep in Ag nanopillars measured via in situ transmission electron microscopy

DOE PAGES

Jawaharram, Gowtham Sriram; Price, Patrick M.; Barr, Christopher M.; ...

2018-01-30

Irradiation induced creep (IIC) rates are measured in compression on Ag nanopillar (square) beams in the sink-limited regime. The IIC rate increases linearly with stress at lower stresses, i.e. below ≈2/3 the high temperature yield stress and parabolically with pillar width, L, for L less than ≈300 nm. Here, the data are obtained by combining in situ transmission electron imaging with simultaneous ion irradiation, laser heating, and nanopillar compression. Results in the larger width regime are consistent with prior literature.

Electron temperature response to ECRH on FTU tokamak in transient conditions.

NASA Astrophysics Data System (ADS)

Jacchia, A.; Bruschi, A.; Cirant, S.; Granucci, G.; Sozzi, C.; de Luca, F.; Amadeo, P.; Bracco, G.; Tudisco, O.

2001-10-01

Steady-state electron heat transport analysis of FTU high density plasmas under Electron Cyclotron Heating (ECRH) shows "stiff" electron temperature profiles [1,2,3]. Plasma response to off-axis EC heating, in fact, exibits a lower limit to electron temperature gradient length, Lc , below which electron thermal conductivity switches to higher values. Stiffness, however, is attenuated in the plasma core of saw-tooth free discharges with flat-hollow temperature profile and during current ramp-up [3,4,5], in which cases the temperature gradient length can be brought to very low values by means of on-axis ECH. Steady and current ramp-up discharges probed by steady and modulated ECH are analyzed in terms of stiffnes. Critical gradient length dependence on local features of computed current density profile is discussed. [1] Sozzi, C. et al., Paper EXP5/13, Plasma Phys. Contr. Fus. Res., Proc.18th IAEA Conf., Sorrento, 2000. [2] Jacchia, A. et al. Topical Conference on Radio Frequency Power in Plasmas, Oxnard, USA, (2001). [3] Cirant, S. et al. Topical Conference on Radio Frequency Power in Plasmas, Oxnard, USA, (2001). [4] Sozzi, C. et al., EPS, Madeira 2001. [5] Bracco, G. et al.,Plasma Phys. Contr. Fus. Res., Proc.18th IAEA Conf., Sorrento, 2000.

High-resolution electron microscope observation of voids in amorphous Ge.

NASA Technical Reports Server (NTRS)

Donovan, T. M.; Heinemann, K.

1971-01-01

Electron micrographs have been obtained which clearly show the existence of a void network in amorphous Ge films formed at substrate temperatures of 25 and 150 C, and the absence of a void network in films formed at higher substrate temperatures of 200 and 250 C. These results correlate quite well with density measurements and predictions of void densities by indirect methods.

Examinations of electron temperature calculation methods in Thomson scattering diagnostics.

PubMed

Oh, Seungtae; Lee, Jong Ha; Wi, Hanmin

2012-10-01

Electron temperature from Thomson scattering diagnostic is derived through indirect calculation based on theoretical model. χ-square test is commonly used in the calculation, and the reliability of the calculation method highly depends on the noise level of input signals. In the simulations, noise effects of the χ-square test are examined and scale factor test is proposed as an alternative method.

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

NASA Technical Reports Server (NTRS)

1996-01-01

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Temperature aspect of degradation of electrochemical double-layer capacitors (EDLC)

NASA Astrophysics Data System (ADS)

Baek, Dong-Cheon; Kim, Hyun-Ho; Lee, Soon-Bok

2015-03-01

Electric double layer capacitors (EDLC) cells have a process variation and temperature dependency in capacitance so that balancing is required when they are connected in series, which includes electronic voltage management based on capacitance monitoring. This paper measured temperature aspect of capacitance periodically to monitor health and degradation behavior of EDLC stressed under high temperatures and zero below temperatures respectively, which enables estimation of the state of health (SOH) regardless of temperature. At high temperature, capacitance saturation and delayed expression of degradation was observed. After cyclic stress at zero below temperature, less effective degradation and time recovery phenomenon were occurred.

Impact of Radiation Hardness and Operating Temperatures of Silicon Carbide Electronics on Space Power System Mass

NASA Technical Reports Server (NTRS)

Juhasz, Albert J.; Tew, Roy C.; Schwarze, Gene E.

1998-01-01

The effect of silicon carbide (SiC) electronics operating temperatures on Power Management and Distribution (PMAD), or Power Conditioning (PC), subsystem radiator size and mass requirements was evaluated for three power output levels (100 kW(e) , 1 MW(e), and 10 MW(e)) for near term technology ( i.e. 1500 K turbine inlet temperature) Closed Cycle Gas Turbine (CCGT) power systems with a High Temperature Gas Reactor (HTGR) heat source. The study was conducted for assumed PC radiator temperatures ranging from 370 to 845 K and for three scenarios of electrical energy to heat conversion levels which needed to be rejected to space by means of the PC radiator. In addition, during part of the study the radiation hardness of the PC electronics was varied at a fixed separation distance to estimate its effect on the mass of the instrument rated reactor shadow shield. With both the PC radiator and the conical shadow shield representing major components of the overall power system the influence of the above on total power system mass was also determined. As expected, results show that the greatest actual mass savings achieved by the use of SiC electronics occur with high capacity power systems. Moreover, raising the PC radiator temperature above 600 K yields only small additional system mass savings. The effect of increased radiation hardness on total system mass is to reduce system mass by virtue of lowering the shield mass.

Behavior of magnesium at high pressures and high temperatures

NASA Astrophysics Data System (ADS)

Cynn, H.; Evans, W.; Yoo, C. S.; Ohishi, Y.; Sata, N.; Shimomura, O.

2004-03-01

Structural stability relationship manifested by 3-, 4-, 5d-electron transition metals also appears in so-called nearly free electron metal, magnesium as exampled by HCP to BCC structure change at high pressures. This transition has been examined by theory and confirmed by experiment. Recently, HCP to DHCP crystal structure change has been reported at high temperatures below 20 GPa. However, this type of structure change is rather common in 4f-electron lanthanides. In this study, we used synchrotron x-ray diffraction to find out the relationship between BCC and DHCP employing a diamond anvil cell technique coupled with external and laser heating methods. We also examined pressure gradient effects in relation with the existence of DHCP. This work has been supported by PDRP program at the Lawrence Livermore National Laboratory, University of California under the auspices of the U.S. Department of Energy under Contract No. W-7405-ENG-48

Highly Conducting Molecular Crystals.

NASA Astrophysics Data System (ADS)

Whitehead, Roger James

Available from UMI in association with The British Library. Requires signed TDF. As the result of a wide ranging effort towards the preparation of new electrically conducting molecular crystals, high quality samples were prepared of the organic radical-ion salt (TMTSF)_2SbCl _2F_4 {bis-tetramethyltetraselenafulvalene-dichlorotetrafluoroantimonate(V) }. A collaborative effort to investigate the electronic and structural properties of this material has yielded the necessary depth of information required to give a satisfactory understanding of its rather complicated behaviour. The combination of x-ray structural studies with d.c. transport, reflectance and magnetic measurements has served to underline the importance of crystalline perfection, electronic dimensionality and conduction electron correlation in determining the materials overall behaviour. This thesis describes the method of preparation and characterization of (TMTSF)_2SbCl _2F_4 and the experimental arrangements used to determine the temperature dependence of its ambient pressure electrical conductivity, thermopower and electron spin resonance spectra. The crystal structure and optical reflectance measurements at room temperature are also presented. The results into a study of the low temperature diffraction pattern are described along with the temperature dependence in the static magnetic susceptibility and in the conductivity behaviour under elevated hydrostatic pressures. These findings are rationalized by reference to other materials which show similar behaviour in their electronic and/or structural properties, and also to the various theoretical models currently enjoying favour.

Doppler Velocimetry of Current Driven Spin Helices in a Two-Dimensional Electron Gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Luyi

2013-05-17

Spins in semiconductors provide a pathway towards the development of spin-based electronics. The appeal of spin logic devices lies in the fact that the spin current is even under time reversal symmetry, yielding non-dissipative coupling to the electric field. To exploit the energy-saving potential of spin current it is essential to be able to control it. While recent demonstrations of electrical-gate control in spin-transistor configurations show great promise, operation at room temperature remains elusive. Further progress requires a deeper understanding of the propagation of spin polarization, particularly in the high mobility semiconductors used for devices. This dissertation presents the demonstrationmore » and application of a powerful new optical technique, Doppler spin velocimetry, for probing the motion of spin polarization at the level of 1 nm on a picosecond time scale. We discuss experiments in which this technique is used to measure the motion of spin helices in high mobility n-GaAs quantum wells as a function of temperature, in-plane electric field, and photoinduced spin polarization amplitude. We find that the spin helix velocity changes sign as a function of wave vector and is zero at the wave vector that yields the largest spin lifetime. This observation is quite striking, but can be explained by the random walk model that we have developed. We discover that coherent spin precession within a propagating spin density wave is lost at temperatures near 150 K. This finding is critical to understanding why room temperature operation of devices based on electrical gate control of spin current has so far remained elusive. We report that, at all temperatures, electron spin polarization co-propagates with the high-mobility electron sea, even when this requires an unusual form of separation of spin density from photoinjected electron density. Furthermore, although the spin packet co-propagates with the two-dimensional electron gas, spin diffusion is strongly suppressed by electron-electron interactions, leading to remarkable resistance to diffusive spreading of the drifting pulse of spin polarization. Finally, we show that spin helices continue propagate at the same speed as the Fermi sea even when the electron drift velocity exceeds the Fermi velocity of 107 cm s -1.« less

Free-bound electron exchange contribution to l-split atomic structure in dense plasmas

NASA Astrophysics Data System (ADS)

Bennadji, K.; Rosmej, F.; Lisitsa, V. S.

2013-11-01

An analytical expression for the exchange energy between the bound electron in hydrogen-like ions and the free electrons of plasma is proposed. Two limiting cases are identified: 1) the low temperature limit where the energy depends linearly on density and on the ion charge as 1/Z2 but does not depend on the temperature itself, 2) the high temperature limit where the energy depends on temperature as 1/T but does not depend on the ion charge. These two regimes are separated by a characteristic temperature (T∗ = 4Z2Ry) which is a universal parameter depending only on the charge Z of the ions. We presented numerical results for aluminum: the exchange energy contributes about 15% to the total plasma energy and can reach an order of 10-4 of the total transition energy. Comparison to the Local-density Approximation (Kohn-Sham) exchange energy shows a good agreement.

Fusion neutron irradiation of Ni-Si alloys at high temperature*1

NASA Astrophysics Data System (ADS)

Huang, J. S.; Guinan, M. W.; Hahn, P. A.

1988-07-01

Two Ni-4% Si alloys, with different cold work levels, have been irradiated with 14-MeV fusion neutrons at 623 K, and their Curie temperatures have been monitored during irradiation. The results are compared to those of an identical alloy irradiated by 2-MeV electrons. The results show that increasing dislocation density increases the Curie temperature change rate. At the same damage rate, the Curie temperature change rate for the alloy irradiated by 14-MeV fusion neutrons is only 6-7% of that for an identical alloy irradiated by 2-MeV electrons. It is well known that the migration of radiation induced defects contributes to segregation of silicon atoms at sinks in this alloy, causing the Curie temperature changes. The current results imply that the relative free defect production efficiency decreases from one for the electron irradiated sample to 6-7% for the fusion neutron irradiated sample.

Oxidation characteristics of MgF2 in air at high temperature

NASA Astrophysics Data System (ADS)

Chen, H. K.; Jie, Y. Y.; Chang, L.

2017-02-01

High temperature oxidation properties of MgF2 in air were studied. The changes of phase composition, macro surface morphology, weight and elemental composition of MgF2 samples with temperature were investigated by using XRD, EDS and gravimetric analyses. The results show that the oxidation reaction of MgF2 converted to MgO occurred at high temperature, and the reaction was accelerated by the increase of temperature and the presence of impurities. This result clarifies the understanding of the high temperature oxidation behavior of MgF2 in air, and provides a theoretical basis for the reasonable application of MgF2 in optical coating materials, electronic ceramic materials and magnesium melt protection.

Electrostatic Levitation Technique for Investigations of Physical Properties of Liquid States

NASA Astrophysics Data System (ADS)

Okada, Junpei; Ishikawa, Takehiko; Paradis, Paul-Francois; Yoda, Shinichi

Electrostatic levitator (ESL) levitates a charged sample in a high vacuum using computer con-trolled electrostatic fields [1]. It can levitate materials such as metals, semiconductors, and some insulators. Sample temperature can be varied over a wide range, and samples can be deeply undercooled. We have been engaged in the research and development of the electro-static levitation technique with the aim of performing levitation dissolution experiments in the International Space Station (ISS). Our device for the electrostatic levitation dissolution test has been developed for experiments on the ISS. To this end, the system is designed to be compact and portable so that it can be launched by rocket and used for experiments in the limited space on the ISS. Accordingly, the device can be installed not just on the ISS or our research laboratory, but also in various external sites. We devised a plan to install the electrostatic levitation system in a site other than the ISS to study atomic structure and electron structure of ultra-high-temperature liquids. We mounted our system on third generation synchrotron radiation facility "SPring-8" in Japan, to investigate the atomic and electron structures of high-temperature liquids. The SPring-8 is an experimental facility that allows use of the most powerful X-rays in the world. We conducted a variety of experiments on ultra-high-temperature liquids using SPring-8. The X-ray is ideal for exploring atomic structure and electron structure. Since the X-ray is an electromagnetic wave, it interacts with electrons. In addition, most electrons gather around the atomic nucleus. By close analysis of the scattered x-rays, we can determine its atomic structure and electron structure in detail. In this talk, we introduce an x-ray Compton scattering and x-ray Raman scattering measurements on liquid aluminum and silicon. [1] W. -K. Rhim, et al, Rev. Sci. Instrum. (1985) 56 307.

From hopping to ballistic transport in graphene-based electronic devices

NASA Astrophysics Data System (ADS)

Taychatanapat, Thiti

This thesis describes electronic transport experiments in graphene from the hopping to the ballistic regime. The first experiment studies dual-gated bilayer graphene devices. By applying an electric field with these dual gates, we can open a band gap in bilayer graphene and observe an increase in resistance of over six orders of magnitude as well as a strongly non-linear behavior in the transport characteristics. A temperature-dependence study of resistance at large electric field at the charge neutrality point shows the change in the transport mechanism from a hopping dominated regime at low temperature to a diffusive regime at high temperature. The second experiment examines electronic properties of Bernal-stacked trilayer graphene. Due to the low mobility of trilayer graphene on SiO 2substrates, we employ hexagonal boron nitride as a local substrate to improve its mobility. This led us to observe a quantum Hall effect with multiple Landau level crossings, proving the coexistence of massless and massive Dirac fermions in Bernal-stacked trilayer graphene. From the position of these crossing points in magnetic field and electron density, we can deduce the band parameters used to model its band structure. At high magnetic field, we observe broken symmetry states via Landau level splittings as well as crossings among these broken-symmetry states. In the third experiment, we investigate transverse magnetic focusing (TMF) in mono-, bi-, and tri-layer graphene. The ability to tune density allows us to electronically modify focal points and investigate TMF continuously from hole to electron regimes. This also allows us to observe the change in band structure of trilayer graphene as a function of applied electric field. Finally, we also observe TMF at room temperature in monolayer graphene which unambiguously proves the existence of ballistic transport at room temperature.

A compact, high temperature nuclear magnetic resonance probe for use in a narrow-bore superconducting magnet

NASA Astrophysics Data System (ADS)

Adler, Stuart B.; Michaels, James N.; Reimer, Jeffrey A.

1990-11-01

The design of a nuclear magnetic resonance (NMR) probe is reported, that can be used in narrow-bore superconducting solenoids for the observation of nuclear induction at high temperatures. The probe is compact, highly sensitive, and stable in continuous operation at temperatures up to 1050 C. The essential feature of the probe is a water-cooled NMR coil that contains the sample-furnace; this design maximizes sensitivity and circuit stability by maintaining the probe electronics at ambient temperature. The design is demonstrated by showing high temperature O-17 NMR spectra and relaxation measurements in solid barium bismuth oxide and yttria-stabilized zirconia.

Effect of parallel electric fields on the ponderomotive stabilization of MHD instabilities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Litwin, C.; Hershkowitz, N.

The contribution of the wave electric field component E/sub parallel/, parallel to the magnetic field, to the ponderomotive stabilization of curvature driven instabilities is evaluated and compared to the transverse component contribution. For the experimental density range, in which the stability is primarily determined by the m = 1 magnetosonic wave, this contribution is found to be the dominant and stabilizing when the electron temperature is neglected. For sufficiently high electron temperatures the dominant fast wave is found to be axially evanescent. In the same limit, E/sub parallel/ becomes radially oscillating. It is concluded that the increased electron temperature nearmore » the plasma surface reduces the magnitude of ponderomotive effects.« less

Development of an interatomic potential for the simulation of defects, plasticity, and phase transformations in titanium

DOE PAGES

Mendelev, M. I.; Underwood, T. L.; Ackland, G. J.

2016-10-17

New interatomic potentials describing defects, plasticity, and high temperature phase transitions for Ti are presented. Fitting the martensitic hcp-bcc phase transformation temperature requires an efficient and accurate method to determine it. We apply a molecular dynamics method based on determination of the melting temperature of competing solid phases, and Gibbs-Helmholtz integration, and a lattice-switch Monte Carlo method: these agree on the hcp-bcc transformation temperatures to within 2 K. We were able to develop embedded atom potentials which give a good fit to either low or high temperature data, but not both. The first developed potential (Ti1) reproduces the hcp-bcc transformationmore » and melting temperatures and is suitable for the simulation of phase transitions and bcc Ti. Two other potentials (Ti2 and Ti3) correctly describe defect properties and can be used to simulate plasticity or radiation damage in hcp Ti. The fact that a single embedded atom method potential cannot describe both low and high temperature phases may be attributed to neglect of electronic degrees of freedom, notably bcc has a much higher electronic entropy. As a result, a temperature-dependent potential obtained from the combination of potentials Ti1 and Ti2 may be used to simulate Ti properties at any temperature.« less

Note: design and development of improved indirectly heated cathode based strip electron gun.

PubMed

Maiti, Namita; Bade, Abhijeet; Tembhare, G U; Patil, D S; Dasgupta, K

2015-02-01

An improved design of indirectly heated solid cathode based electron gun (200 kW, 45 kV, 270° bent strip type electron gun) has been presented. The solid cathode is made of thoriated tungsten, which acts as an improved source of electron at lower temperature. So, high power operation is possible without affecting structural integrity of the electron gun. The design issues are addressed based on the uniformity of temperature on the solid cathode and the single long filament based design. The design approach consists of simulation followed by extensive experimentation. In the design, the effort has been put to tailor the non-uniformity of the heat flux from the filament to the solid cathode to obtain better uniformity of temperature on the solid cathode. Trial beam experiments have been carried out and it is seen that the modified design achieves one to one correspondence of the solid cathode length and the electron beam length.

Note: Design and development of improved indirectly heated cathode based strip electron gun

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maiti, Namita; Patil, D. S.; Dasgupta, K.

An improved design of indirectly heated solid cathode based electron gun (200 kW, 45 kV, 270° bent strip type electron gun) has been presented. The solid cathode is made of thoriated tungsten, which acts as an improved source of electron at lower temperature. So, high power operation is possible without affecting structural integrity of the electron gun. The design issues are addressed based on the uniformity of temperature on the solid cathode and the single long filament based design. The design approach consists of simulation followed by extensive experimentation. In the design, the effort has been put to tailor themore » non-uniformity of the heat flux from the filament to the solid cathode to obtain better uniformity of temperature on the solid cathode. Trial beam experiments have been carried out and it is seen that the modified design achieves one to one correspondence of the solid cathode length and the electron beam length.« less

Highly Efficient Room Temperature Spin Injection Using Spin Filtering in MgO

NASA Astrophysics Data System (ADS)

Jiang, Xin

2007-03-01

Efficient electrical spin injection into GaAs/AlGaAs quantum well structures was demonstrated using CoFe/MgO tunnel spin injectors at room temperature. The spin polarization of the injected electron current was inferred from the circular polarization of electroluminescence from the quantum well. Polarization values as high as 57% at 100 K and 47% at 290 K were obtained in a perpendicular magnetic field of 5 Tesla. The interface between the tunnel spin injector and the GaAs interface remained stable even after thermal annealing at 400 ^oC. The temperature dependence of the electron-hole recombination time and the electron spin relaxation time in the quantum well was measured using time-resolved optical techniques. By taking into account of these properties of the quantum well, the intrinsic spin injection efficiency can be deduced. We conclude that the efficiency of spin injection from a CoFe/MgO spin injector is nearly independent of temperature and, moreover, is highly efficient with an efficiency of ˜ 70% for the temperature range studied (10 K to room temperature). Tunnel spin injectors are thus highly promising components of future semiconductor spintronic devices. Collaborators: Roger Wang^1, 3, Gian Salis^2, Robert Shelby^1, Roger Macfarlane^1, Seth Bank^3, Glenn Solomon^3, James Harris^3, Stuart S. P. Parkin^1 ^1 IBM Almaden Research Center, San Jose, CA 95120 ^2 IBM Zurich Research Laboratory, S"aumerstrasse 4, 8803 R"uschlikon, Switzerland ^3 Solid States and Photonics Laboratory, Stanford University, Stanford, CA 94305

OM300 Direction Drilling Module

DOE Data Explorer

MacGugan, Doug

2013-08-22

OM300 – Geothermal Direction Drilling Navigation Tool: Design and produce a prototype directional drilling navigation tool capable of high temperature operation in geothermal drilling Accuracies of 0.1° Inclination and Tool Face, 0.5° Azimuth Environmental Ruggedness typical of existing oil/gas drilling Multiple Selectable Sensor Ranges High accuracy for navigation, low bandwidth High G-range & bandwidth for Stick-Slip and Chirp detection Selectable serial data communications Reduce cost of drilling in high temperature Geothermal reservoirs Innovative aspects of project Honeywell MEMS* Vibrating Beam Accelerometers (VBA) APS Flux-gate Magnetometers Honeywell Silicon-On-Insulator (SOI) High-temperature electronics Rugged High-temperature capable package and assembly process

Transport coefficients in high-temperature ionized air flows with electronic excitation

NASA Astrophysics Data System (ADS)

Istomin, V. A.; Oblapenko, G. P.

2018-01-01

Transport coefficients are studied in high-temperature ionized air mixtures using the modified Chapman-Enskog method. The 11-component mixture N2/N2+/N /N+/O2/O2+/O /O+/N O /N O+/e- , taking into account the rotational and vibrational degrees of freedom of molecules and electronic degrees of freedom of both atomic and molecular species, is considered. Using the PAINeT software package, developed by the authors of the paper, in wide temperature range calculations of the thermal conductivity, thermal diffusion, diffusion, and shear viscosity coefficients for an equilibrium ionized air mixture and non-equilibrium flow conditions for mixture compositions, characteristic of those in shock tube experiments and re-entry conditions, are performed. For the equilibrium air case, the computed transport coefficients are compared to those obtained using simplified kinetic theory algorithms. It is shown that neglecting electronic excitation leads to a significant underestimation of the thermal conductivity coefficient at temperatures higher than 25 000 K. For non-equilibrium test cases, it is shown that the thermal diffusion coefficients of neutral species and the self-diffusion coefficients of all species are strongly affected by the mixture composition, while the thermal conductivity coefficient is most strongly influenced by the degree of ionization of the flow. Neglecting electronic excitation causes noticeable underestimation of the thermal conductivity coefficient at temperatures higher than 20 000 K.

Enhancement of the Rate Capability of LiFePO4 by a New Highly Graphitic Carbon-Coating Method.

PubMed

Song, Jianjun; Sun, Bing; Liu, Hao; Ma, Zhipeng; Chen, Zhouhao; Shao, Guangjie; Wang, Guoxiu

2016-06-22

Low lithium ion diffusivity and poor electronic conductivity are two major drawbacks for the wide application of LiFePO4 in high-power lithium ion batteries. In this work, we report a facile and efficient carbon-coating method to prepare LiFePO4/graphitic carbon composites by in situ carbonization of perylene-3,4,9,10-tetracarboxylic dianhydride during calcination. Perylene-3,4,9,10-tetracarboxylic dianhydride containing naphthalene rings can be easily converted to highly graphitic carbon during thermal treatment. The ultrathin layer of highly graphitic carbon coating drastically increased the electronic conductivity of LiFePO4. The short pathway along the [010] direction of LiFePO4 nanoplates could decrease the Li(+) ion diffusion path. In favor of the high electronic conductivity and short lithium ion diffusion distance, the LiFePO4/graphitic carbon composites exhibit an excellent cycling stability at high current rates at room temperature and superior performance at low temperature (-20 °C).

Three-Dimensional Intercalated Porous Graphene on Si(111)

NASA Astrophysics Data System (ADS)

Pham, Trung T.; Sporken, Robert

2018-02-01

Three-dimensional intercalated porous graphene has been formed on Si(111) by electron beam evaporation under appropriate conditions and its structural and electronic properties investigated in detail by reflection high-energy electron diffraction, x-ray photoemission spectroscopy, Raman spectroscopy, high-resolution scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. The results show that the crystalline quality of the porous graphene depended not only on the substrate temperature but also on the SiC layer thickness during carbon atom deposition.

Potential high-Tc superconducting lanthanum and yttrium hydrides at high pressure

PubMed Central

Liu, Hanyu; Naumov, Ivan I.; Hoffmann, Roald; Ashcroft, N. W.; Hemley, Russell J.

2017-01-01

A systematic structure search in the La–H and Y–H systems under pressure reveals some hydrogen-rich structures with intriguing electronic properties. For example, LaH10 is found to adopt a sodalite-like face-centered cubic (fcc) structure, stable above 200 GPa, and LaH8 a C2/m space group structure. Phonon calculations indicate both are dynamically stable; electron phonon calculations coupled to Bardeen–Cooper–Schrieffer (BCS) arguments indicate they might be high-Tc superconductors. In particular, the superconducting transition temperature Tc calculated for LaH10 is 274–286 K at 210 GPa. Similar calculations for the Y–H system predict stability of the sodalite-like fcc YH10 and a Tc above room temperature, reaching 305–326 K at 250 GPa. The study suggests that dense hydrides consisting of these and related hydrogen polyhedral networks may represent new classes of potential very high-temperature superconductors. PMID:28630301

Production of fullerenes and single-wall carbon nanotubes by high-temperature pulsed arc discharge

NASA Astrophysics Data System (ADS)

Sugai, Toshiki; Omote, Hideki; Bandow, Shunji; Tanaka, Nobuo; Shinohara, Hisanori

2000-04-01

Fullerenes and single-wall carbon nanotubes (SWNTs) have been produced for the first time by the high-temperature pulsed arc-discharge technique, which has developed in this laboratory. Fullerenes are identified quantitatively by high-performance liquid chromatography (HPLC), and scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations reveal a significant amount of production of bundles of SWNTs in soot. The pulse arc production of fullerenes and SWNTs favors the high-temperature (⩾1000 °C), long pulses (⩾1 ms) and a heavy rare gas such as Ar or Kr as a buffer gas. We have found that fullerenes and SWNTs have complementary relationships in their early stage of production. The details of the pulsed arc discharge have been obtained by observing the transition from the pulsed arc discharge to the steady arc discharge while increasing the pulse width.

Electron microscopy observation of TiO2 nanocrystal evolution in high-temperature atomic layer deposition.

PubMed

Shi, Jian; Li, Zhaodong; Kvit, Alexander; Krylyuk, Sergiy; Davydov, Albert V; Wang, Xudong

2013-01-01

Understanding the evolution of amorphous and crystalline phases during atomic layer deposition (ALD) is essential for creating high quality dielectrics, multifunctional films/coatings, and predictable surface functionalization. Through comprehensive atomistic electron microscopy study of ALD TiO2 nanostructures at designed growth cycles, we revealed the transformation process and sequence of atom arrangement during TiO2 ALD growth. Evolution of TiO2 nanostructures in ALD was found following a path from amorphous layers to amorphous particles to metastable crystallites and ultimately to stable crystalline forms. Such a phase evolution is a manifestation of the Ostwald-Lussac Law, which governs the advent sequence and amount ratio of different phases in high-temperature TiO2 ALD nanostructures. The amorphous-crystalline mixture also enables a unique anisotropic crystal growth behavior at high temperature forming TiO2 nanorods via the principle of vapor-phase oriented attachment.

Low-Temperature Scanning Capacitance Probe for Imaging Electron Motion

NASA Astrophysics Data System (ADS)

Bhandari, S.; Westervelt, R. M.

2014-12-01

Novel techniques to probe electronic properties at the nanoscale can shed light on the physics of nanoscale devices. In particular, studying the scattering of electrons from edges and apertures at the nanoscale and imaging the electron profile in a quantum dot, have been of interest [1]. In this paper, we present the design and implementation of a cooled scanning capacitance probe that operates at liquid He temperatures to image electron waves in nanodevices. The conducting tip of a scanned probe microscope is held above the nanoscale structure, and an applied sample-to-tip voltage creates an image charge that is measured by a cooled charge amplifier [2] adjacent to the tip. The circuit is based on a low-capacitance, high- electron-mobility transistor (Fujitsu FHX35X). The input is a capacitance bridge formed by a low capacitance pinched-off HEMT transistor and tip-sample capacitance. We have achieved low noise level (0.13 e/VHz) and high spatial resolution (100 nm) for this technique, which promises to be a useful tool to study electronic behavior in nanoscale devices.

Quantum phase transition and destruction of Kondo effect in pressurized SmB 6

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Yazhou; Wu, Qi; Rosa, Priscila Ferrari Silveira

SmB 6 has been a well-known Kondo insulator for decades, but recently attracts extensive new attention as a candidate topological system. Studying SmB 6 under pressure provides an opportunity to acquire the much-needed understanding about the effect of electron correlations on both the metallic surface state and bulk insulating state. Here we do so by studying the evolution of two transport gaps (low temperature gap E l and high temperature gap E h) associated with the Kondo effect by measuring the electrical resistivity under high pressure and low temperature (0.3 K) conditions. We associate the gaps with the bulk Kondomore » hybridization, and from their evolution with pressure we demonstrate an insulator-to-metal transition at ~4 GPa. At the transition pressure, a large change in the Hall number and a divergence tendency of the electron-electron scattering coefficient provide evidence for a destruction of the Kondo entanglement in the ground state. In conclusion, our results raise the new prospect for studying topological electronic states in quantum critical materials settings.« less

Quantum phase transition and destruction of Kondo effect in pressurized SmB 6

DOE PAGES

Zhou, Yazhou; Wu, Qi; Rosa, Priscila Ferrari Silveira; ...

2017-10-24

SmB 6 has been a well-known Kondo insulator for decades, but recently attracts extensive new attention as a candidate topological system. Studying SmB 6 under pressure provides an opportunity to acquire the much-needed understanding about the effect of electron correlations on both the metallic surface state and bulk insulating state. Here we do so by studying the evolution of two transport gaps (low temperature gap E l and high temperature gap E h) associated with the Kondo effect by measuring the electrical resistivity under high pressure and low temperature (0.3 K) conditions. We associate the gaps with the bulk Kondomore » hybridization, and from their evolution with pressure we demonstrate an insulator-to-metal transition at ~4 GPa. At the transition pressure, a large change in the Hall number and a divergence tendency of the electron-electron scattering coefficient provide evidence for a destruction of the Kondo entanglement in the ground state. In conclusion, our results raise the new prospect for studying topological electronic states in quantum critical materials settings.« less

Diagnosing the Fine Structure of Electron Energy Within the ECRIT Ion Source

NASA Astrophysics Data System (ADS)

Jin, Yizhou; Yang, Juan; Tang, Mingjie; Luo, Litao; Feng, Bingbing

2016-07-01

The ion source of the electron cyclotron resonance ion thruster (ECRIT) extracts ions from its ECR plasma to generate thrust, and has the property of low gas consumption (2 sccm, standard-state cubic centimeter per minute) and high durability. Due to the indispensable effects of the primary electron in gas discharge, it is important to experimentally clarify the electron energy structure within the ion source of the ECRIT through analyzing the electron energy distribution function (EEDF) of the plasma inside the thruster. In this article the Langmuir probe diagnosing method was used to diagnose the EEDF, from which the effective electron temperature, plasma density and the electron energy probability function (EEPF) were deduced. The experimental results show that the magnetic field influences the curves of EEDF and EEPF and make the effective plasma parameter nonuniform. The diagnosed electron temperature and density from sample points increased from 4 eV/2×1016 m-3 to 10 eV/4×1016 m-3 with increasing distances from both the axis and the screen grid of the ion source. Electron temperature and density peaking near the wall coincided with the discharge process. However, a double Maxwellian electron distribution was unexpectedly observed at the position near the axis of the ion source and about 30 mm from the screen grid. Besides, the double Maxwellian electron distribution was more likely to emerge at high power and a low gas flow rate. These phenomena were believed to relate to the arrangements of the gas inlets and the magnetic field where the double Maxwellian electron distribution exits. The results of this research may enhance the understanding of the plasma generation process in the ion source of this type and help to improve its performance. supported by National Natural Science Foundation of China (No. 11475137)

Hydrogen production by high-temperature water splitting using electron-conducting membranes

DOEpatents

Lee, Tae H.; Wang, Shuangyan; Dorris, Stephen E.; Balachandran, Uthamalingam

2004-04-27

A device and method for separating water into hydrogen and oxygen is disclosed. A first substantially gas impervious solid electron-conducting membrane for selectively passing hydrogen is provided and spaced from a second substantially gas impervious solid electron-conducting membrane for selectively passing oxygen. When steam is passed between the two membranes at disassociation temperatures the hydrogen from the disassociation of steam selectively and continuously passes through the first membrane and oxygen selectively and continuously passes through the second membrane, thereby continuously driving the disassociation of steam producing hydrogen and oxygen.

An ultrabright and monochromatic electron point source made of a LaB6 nanowire

NASA Astrophysics Data System (ADS)

Zhang, Han; Tang, Jie; Yuan, Jinshi; Yamauchi, Yasushi; Suzuki, Taku T.; Shinya, Norio; Nakajima, Kiyomi; Qin, Lu-Chang

2016-03-01

Electron sources in the form of one-dimensional nanotubes and nanowires are an essential tool for investigations in a variety of fields, such as X-ray computed tomography, flexible displays, chemical sensors and electron optics applications. However, field emission instability and the need to work under high-vacuum or high-temperature conditions have imposed stringent requirements that are currently limiting the range of application of electron sources. Here we report the fabrication of a LaB6 nanowire with only a few La atoms bonded on the tip that emits collimated electrons from a single point with high monochromaticity. The nanostructured tip has a low work function of 2.07 eV (lower than that of Cs) while remaining chemically inert, two properties usually regarded as mutually exclusive. Installed in a scanning electron microscope (SEM) field emission gun, our tip shows a current density gain that is about 1,000 times greater than that achievable with W(310) tips, and no emission decay for tens of hours of operation. Using this new SEM, we acquired very low-noise, high-resolution images together with rapid chemical compositional mapping using a tip operated at room temperature and at 10-times higher residual gas pressure than that required for W tips.

Thin Film Technology of High-Critical-Temperature Superconducting Electronics.

DTIC Science & Technology

1983-12-05

MD- R136 722 THIN FILM TECHNOLOGY OF HIGH-CRITICAL-TEMPERATURE 1/1 SUPERCONDUCTING ELECTRO..(U) WESTINGHOUSE RESEARCH AND DEVELOPMENT CENTER...critical temperature has been demonstrated. Work will continue in a closed system to eliminate the base superconductor degradation, reduce leakage...a 5% decline in Tc has been demonstrated. Work will continue in a closed system to eliminate the base superconductor degradation, reduce leakage and

The low-temperature method for study of coniferous tissues in the environmental scanning electron microscope.

PubMed

Neděla, Vilém; Tihlaříková, Eva; Hřib, Jiří

2015-01-01

The use of non-standard low-temperature conditions in environmental scanning electron microscopy might be promising for the observation of coniferous tissues in their native state. This study is aimed to analyse and evaluate the method based on the principle of low-temperature sample stabilization. We demonstrate that the upper mucous layer is sublimed and a microstructure of the sample surface can be observed with higher resolution at lower gas pressure conditions, thanks to a low-temperature method. An influence of the low-temperature method on sample stability was also studied. The results indicate that high-moisture conditions are not suitable for this method and often cause the collapse of samples. The potential improvement of stability to beam damage has been demonstrated by long-time observation at different operation parameters. We finally show high applicability of the low-temperature method on different types of conifers and Oxalis acetosella. © 2014 Wiley Periodicals, Inc.

Coarsening behaviour of M23C6 carbides in creep-resistant steel exposed to high temperatures

NASA Astrophysics Data System (ADS)

Godec, M.; Skobir Balantič, D. A.

2016-07-01

High operating temperatures can have very deleterious effects on the long-term performance of high-Cr, creep-resistant steels used, for example, in the structural components of power plants. For the popular creep-resistant steel X20CrMoV12.1 we analysed the processes of carbide growth using a variety of analytical techniques: transmission electron microscopy (TEM) and diffraction (TED), scanning electron microscopy (SEM), and electron backscatter diffraction (EBSD). The evolution of the microstructure after different aging times was the basis for a much better understanding of the boundary-migration processes and the growth of the carbides. We present an explanation as to why some locations are preferential for this growth, and using EBSD we were able to define the proper orientational relationship between the carbides and the matrix.

Achieving High Current Density of Perovskite Solar Cells by Modulating the Dominated Facets of Room-Temperature DC Magnetron Sputtered TiO2 Electron Extraction Layer.

PubMed

Huang, Aibin; Lei, Lei; Zhu, Jingting; Yu, Yu; Liu, Yan; Yang, Songwang; Bao, Shanhu; Cao, Xun; Jin, Ping

2017-01-25

The short circuit current density of perovskite solar cell (PSC) was boosted by modulating the dominated plane facets of TiO 2 electron transport layer (ETL). Under optimized condition, TiO 2 with dominant {001} facets showed (i) low incident light loss, (ii) highly smooth surface and excellent wettability for precursor solution, (iii) efficient electron extraction, and (iv) high conductivity in perovskite photovoltaic application. A current density of 24.19 mA cm -2 was achieved as a value near the maximum limit. The power conversion efficiency was improved to 17.25%, which was the record value of PSCs with DC magnetron sputtered carrier transport layer. What is more, the room-temperature process had a great significance for the cost reduction and flexible application of PSCs.

Electronic and Transport Properties of LaNi4Sb12 Skutterudite: Modified Becke-Johnson Approach

NASA Astrophysics Data System (ADS)

Bhat, Tahir Mohiuddin; Singh, Srishti; Gupta, Dinesh C.

2018-05-01

We carried out an ab initio study of structural, electronic, thermodynamic, and thermoelectric properties of the lanthanum-filled skutterudite, LaNi4Sb12. Generalized gradient approximation and modified Becke-Johnson potentials were employed for the exchange-correlation potential. The electronic structure calculations display the metallic behavior of the compound. The alloy offers low lattice thermal conductivity along with a high Seebeck coefficient with a value of - 158 (μVK-1) at room temperature. The effect of high pressure and temperature on thermal properties like thermal expansion coefficient, heat capacity, and Grüneisen parameter are also investigated by means of a quasi-harmonic Debye model. The large Seebeck coefficient and high power factor exhibited by LaNi4Sb12 make it an attractive candidate for thermoelectric materials.

Two-Dimensional Superconductivity in the Cuprates Revealed by Atomic-Layer-by- Layer Molecular Beam Epitaxy

DOE PAGES

A. T. Bollinger; Bozovic, I.

2016-08-12

Various electronic phases displayed by cuprates that exhibit high temperature superconductivity continue to attract much interest. We provide a short review of several experiments that we have performed aimed at investigating the superconducting state in these compounds. Measurements on single-phase films, bilayers, and superlattices all point to the conclusion that the high-temperature superconductivity in these materials is an essentially quasi-two dimensional phenomenon. With proper control over the film growth, high-temperature superconductivity can exist in a single copper oxide plane with the critical temperatures as high as that achieved in the bulk samples.

Electron-phonon relaxation and excited electron distribution in gallium nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhukov, V. P.; Donostia International Physics Center; Tyuterev, V. G., E-mail: valtyut00@mail.ru

2016-08-28

We develop a theory of energy relaxation in semiconductors and insulators highly excited by the long-acting external irradiation. We derive the equation for the non-equilibrium distribution function of excited electrons. The solution for this function breaks up into the sum of two contributions. The low-energy contribution is concentrated in a narrow range near the bottom of the conduction band. It has the typical form of a Fermi distribution with an effective temperature and chemical potential. The effective temperature and chemical potential in this low-energy term are determined by the intensity of carriers' generation, the speed of electron-phonon relaxation, rates ofmore » inter-band recombination, and electron capture on the defects. In addition, there is a substantial high-energy correction. This high-energy “tail” largely covers the conduction band. The shape of the high-energy “tail” strongly depends on the rate of electron-phonon relaxation but does not depend on the rates of recombination and trapping. We apply the theory to the calculation of a non-equilibrium distribution of electrons in an irradiated GaN. Probabilities of optical excitations from the valence to conduction band and electron-phonon coupling probabilities in GaN were calculated by the density functional perturbation theory. Our calculation of both parts of distribution function in gallium nitride shows that when the speed of the electron-phonon scattering is comparable with the rate of recombination and trapping then the contribution of the non-Fermi “tail” is comparable with that of the low-energy Fermi-like component. So the high-energy contribution can essentially affect the charge transport in the irradiated and highly doped semiconductors.« less

Rare earth chalcogenide Ce3Te4 as high efficiency high temperature thermoelectric material

NASA Astrophysics Data System (ADS)

Wang, Xiaochun; Yang, Ronggui; Zhang, Yong; Zhang, Peihong; Xue, Yu

2011-05-01

The electronic band structures of Ce3Te4 have been studied using the first-principles density-functional theory calculations. It is found that the density of states of Ce3Te4 has a very high delta-shaped peak appearing 0.21 eV above the Fermi level, which mainly comes from the f orbital electrons of the rare-earth element Ce. Using the simple theory proposed by Mahan and Sofo, [Proc. Natl. Acad. Sci. U.S.A. 93, 7436 (1996)], we obtain an ideal value of zT=13.5 for Ce3Te4 at T=1200 K, suggesting that the rare-earth chalcogenide Ce3Te4 could be a promising high efficiency high temperature thermoelectric material.

Room temperature chemical synthesis of lead selenide thin films with preferred orientation

NASA Astrophysics Data System (ADS)

Kale, R. B.; Sartale, S. D.; Ganesan, V.; Lokhande, C. D.; Lin, Yi-Feng; Lu, Shih-Yuan

2006-11-01

Room temperature chemical synthesis of PbSe thin films was carried out from aqueous ammoniacal solution using Pb(CH3COO)2 as Pb2+ and Na2SeSO3 as Se2- ion sources. The films were characterized by a various techniques including, X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HR-TEM), selected area electron diffraction (SAED), Fast Fourier transform (FFT) and UV-vis-NIR techniques. The study revealed that the PbSe thin film consists of preferentially oriented nanocubes with energy band gap of 0.5 eV.

Containerless high temperature property measurements by atomic fluorescence

NASA Technical Reports Server (NTRS)

Schiffman, R. A.; Walker, C. A.

1984-01-01

Laser induced fluorescence (LIF) techniques for containerless study of high temperature processes and material properties was studied. Gas jet and electromagnetic levitation and electromagnetic and laser heating techniques are used with LIF in earth-based containerless high temperature experiments. Included are the development of an apparatus and its use in the studies of (1) chemical reactions on Al2O3, molybdenum, tungsten and LaB6 specimens, (2) methods for noncontact specimen temperature measurement, (3) levitation jet properties and (4) radiative lifetime and collisional energy transfer rates for electronically excited atoms.

A review of the deformation behavior of tungsten at temperatures less than 0.2 of the melting point /K/

NASA Technical Reports Server (NTRS)

Stephens, J. R.

1974-01-01

The deformation behavior of tungsten at temperatures below 0.2 times the absolute melting temperature is reviewed with primary emphasis on the temperature dependence of the yield stress and the ductile-brittle transition. It is concluded that a model based on the high Peierls stress of tungsten best accounts for the observed mechanical behavior at low temperatures. Recent research suggests an important role of electron concentration and bonding on the mechanical behavior of tungsten. Future research on tungsten should include studies to define more clearly the correlation between electron concentration and mechanical behavior of alloys of tungsten and other transition metal alloys.

Equation of state and electron localisation in fcc lithium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frost, Mungo; Levitan, Abraham L.; Sun, Peihao

We present an improved equation of state for the high-pressure fcc phase of lithium with ambient temperature experimental data, extending the pressure range of previous studies to 36 GPa. Accompanying density functional theory calculations, which reproduce the experimental equation of state, show that with increasing density the phase diverges from a nearly free electron metal. At the high pressure limit of its stability fcc lithium exhibits enhanced electron density on the octahedral interstices with a high degree of localisation.

Equation of state and electron localisation in fcc lithium

DOE PAGES

Frost, Mungo; Levitan, Abraham L.; Sun, Peihao; ...

2018-02-14

We present an improved equation of state for the high-pressure fcc phase of lithium with ambient temperature experimental data, extending the pressure range of previous studies to 36 GPa. Accompanying density functional theory calculations, which reproduce the experimental equation of state, show that with increasing density the phase diverges from a nearly free electron metal. At the high pressure limit of its stability fcc lithium exhibits enhanced electron density on the octahedral interstices with a high degree of localisation.

Electrochemically Induced Insulator-Metal-Insulator Transformations of Vanadium Dioxide Nanocrystal Films

NASA Astrophysics Data System (ADS)

Milliron, Delia; Dahlman, Clayton; Leblanc, Gabriel; Bergerud, Amy

Vanadium dioxide (VO2) undergoes significant optical, electronic, and structural changes as it transforms between the low-temperature monoclinic and high-temperature rutile phases. The low-temperature state is insulating and transparent, while the high-temperature state is metallic and IR blocking. Alternative stimuli have been utilized to trigger insulator-to-metal transformations in VO2, including electrochemical gating. Here, VO2 nanocrystal films have been prepared by solution deposition of V2O3 nanocrystals followed by oxidative annealing. Nanocrystalline VO2 films are electrochemically reduced, inducing changes in their electronic and optical properties. We observe a reversible transition between infrared transparent insulating phases and a darkened metallic phase by in situ visible-near-infrared spectroelectrochemistry and correlate these observations with structural and electronic changes monitored by X-ray absorption spectroscopy, X-ray diffraction, Raman spectroscopy, and conductivity measurements. Reduction causes an initial transformation to a metallic, IR-colored distorted monoclinic phase. However, an unexpected reversible transition from conductive, reduced monoclinic VO2 to an infrared-transparent insulating phase is observed upon further reduction.

Thermal stability of MBE-grown epitaxial MoSe2 and WSe2 thin films

NASA Astrophysics Data System (ADS)

Chang, Young Jun; Choy, Byoung Ki; Phark, Soo-Hyon; Kim, Minu

Layered transition metal dichalcogenides (TMDs) draw much attention, because of its unique optical properties and band structures depending on the layer thicknesses. However, MBE growth of epitaxial films demands information about thermal stability of stoichiometry and related electronic structure for high temperature range. We grow epitaxial MoSe2 and WSe2 ultrathin films by using molecular beam epitaxy (MBE). We characterize stoichiometry of films grown at various growth temperature by using various methods, XPS, EDX, and TOF-MEIS. We further test high temperature stability of electronic structure for those films by utilizing in-situ ellipsometry attached to UHV chamber. We discuss threshold temperatures up to 700~1000oC, at which electronic phases changes from semiconductor to metal due to selenium deficiency. This information can be useful for potential application of TMDs for fabrication of Van der Waals multilayers and related devices. This research was supported by Nano.Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning. (2009-0082580), NRF-2014R1A1A1002868.

Annealing effect on microstructural recovery in 316L and A533B

NASA Astrophysics Data System (ADS)

Hashimoto, N.; Goto, S.; Inoue, S.; Suzuki, E.

2017-11-01

An austenitic model alloy (316L) and a low alloy steel (A533B) were exposed to constant or fluctuating temperature after electron irradiation to a cumulative damage level of 1 displacement per atom. 316L model alloy was exposed to LWR operating temperature during electron irradiation, and were exposed to a higher temperature at a high heating and cooling rates. The annealing experiment after irradiation to 316L resulted in the change in irradiation-induced microstructure; both the size and the number density of Frank loop and black dots were decreased, while the volume fraction of void was increased. In the case of A533B, the aging experiment after electron irradiation resulted in the shrinkage or the disappearance of black dots and the growth of dislocation loops. It is suggested that during annealing and/or aging at a high temperature the excess vacancies could be provided and flew into each defect feature, resulting in that interstitial type feature could be diminished, while vacancy type increased in volume fraction if exists.

Room temperature-synthesized vertically aligned InSb nanowires: electrical transport and field emission characteristics

PubMed Central

2013-01-01

Vertically aligned single-crystal InSb nanowires were synthesized via the electrochemical method at room temperature. The characteristics of Fourier transform infrared spectrum revealed that in the syntheses of InSb nanowires, energy bandgap shifts towards the short wavelength with the occurrence of an electron accumulation layer. The current–voltage curve, based on the metal–semiconductor–metal model, showed a high electron carrier concentration of 2.0 × 1017 cm−3 and a high electron mobility of 446.42 cm2 V−1 s−1. Additionally, the high carrier concentration of the InSb semiconductor with the surface accumulation layer induced a downward band bending effect that reduces the electron tunneling barrier. Consequently, the InSb nanowires exhibit significant field emission properties with an extremely low turn-on field of 1.84 V μm−1 and an estimative threshold field of 3.36 V μm−1. PMID:23399075

Study of high field side/low field side asymmetry in the electron temperature profile with electron cyclotron emission

NASA Astrophysics Data System (ADS)

Gugliada, V. R.; Austin, M. E.; Brookman, M. W.

2017-10-01

Electron cyclotron emission (ECE) provides high resolution measurements of electron temperature profiles (Te(R , t)) in tokamaks. Calibration accuracy of this data can be improved using a sawtooth averaging technique. This improved calibration will then be utilized to determine the symmetry of Te profiles by comparing low field side (LFS) and high field side (HFS) measurements. Although Te is considered constant on flux surfaces, cases have been observed in which there are pronounced asymmetries about the magnetic axis, particularly with increased pressure. Trends in LFS/HFS overlap are examined as functions of plasma pressure, MHD mode presence, heating techniques, and other discharge conditions. This research will provide information on the accuracy of the current two-dimensional mapping of flux surfaces in the tokamak. Findings can be used to generate higher quality EFITs and inform ECE calibration. Work supported in part by US DoE under the Science Undergraduate Laboratory Internship (SULI) program and under DE-FC02-04ER549698.

Prospects for Engineering Thermoelectric Properties in La1/3NbO3 Ceramics Revealed via Atomic-Level Characterization and Modeling.

PubMed

Kepaptsoglou, Demie; Baran, Jakub D; Azough, Feridoon; Ekren, Dursun; Srivastava, Deepanshu; Molinari, Marco; Parker, Stephen C; Ramasse, Quentin M; Freer, Robert

2018-01-02

A combination of experimental and computational techniques has been employed to explore the crystal structure and thermoelectric properties of A-site-deficient perovskite La 1/3 NbO 3 ceramics. Crystallographic data from X-ray and electron diffraction confirmed that the room temperature structure is orthorhombic with Cmmm as a space group. Atomically resolved imaging and analysis showed that there are two distinct A sites: one is occupied with La and vacancies, and the second site is fully unoccupied. The diffuse superstructure reflections observed through diffraction techniques are shown to originate from La vacancy ordering. La 1/3 NbO 3 ceramics sintered in air showed promising high-temperature thermoelectric properties with a high Seebeck coefficient of S 1 = -650 to -700 μV/K and a low and temperature-stable thermal conductivity of k = 2-2.2 W/m·K in the temperature range of 300-1000 K. First-principles electronic structure calculations are used to link the temperature dependence of the Seebeck coefficient measured experimentally to the evolution of the density of states with temperature and indicate possible avenues for further optimization through electron doping and control of the A-site occupancies. Moreover, lattice thermal conductivity calculations give insights into the dependence of the thermal conductivity on specific crystallographic directions of the material, which could be exploited via nanostructuring to create high-efficiency compound thermoelectrics.

NOx reduction by electron beam-produced nitrogen atom injection

DOEpatents

Penetrante, Bernardino M.

2002-01-01

Deactivated atomic nitrogen generated by an electron beam from a gas stream containing more than 99% N.sub.2 is injected at low temperatures into an engine exhaust to reduce NOx emissions. High NOx reduction efficiency is achieved with compact electron beam devices without use of a catalyst.

Barium-Dispenser Thermionic Cathode

NASA Technical Reports Server (NTRS)

Wintucky, Edwin G.; Green, M.; Feinleib, M.

1989-01-01

Improved reservoir cathode serves as intense source of electrons required for high-frequency and often high-output-power, linear-beam tubes, for which long operating lifetime important consideration. High emission-current densities obtained through use of emitting surface of relatively-low effective work function and narrow work-function distribution, consisting of coat of W/Os deposited by sputtering. Lower operating temperatures and enhanced electron emission consequently possible.

Application Specific Electronic Module Program (ASEM), Final Technical Report.

DTIC Science & Technology

1994-12-14

relatively high temperatures , may induce a metal break or other continuity problems. Secondly, the improved electrical environment at the module level vs...wafer probe can permit higher speed tests to be applied, isolating marginal die. Thirdly, high reliability screens, such as temperature cycling, bum-in...The high temperature aging is done at 150’ C for 500 hours. The thermal cycle treatments are from 0- 100 0 C and 3 cycles per hour are done. The

Department of Defense Advisory Group on Electron Devices. Special Technology Area Review on Microwave Packaging Technology. Appendix

DTIC Science & Technology

1993-02-01

sintered in hydrogen furnace at very high temperatures . Multiple furnace firing occurs until the binders are removed and part density is achieved "* Process...and base Low temperature co-fired ceramic - Metallized for shielding and grounding - Low resistance thick-film metallization - High thermal resistance...ESPECIALLY LOW TEMPERATURE COFIRED CERAMIC CERAMICS HIGH THERMAL CONDUCTIVITY,MATCHED GaAS AND SILICON SUBSTRATE MATERIALS I I,1Z#A,17Mr1 J, TI

Nonlinear transport behavior of low dimensional electron systems

NASA Astrophysics Data System (ADS)

Zhang, Jingqiao

The nonlinear behavior of low-dimensional electron systems attracts a great deal of attention for its fundamental interest as well as for potentially important applications in nanoelectronics. In response to microwave radiation and dc bias, strongly nonlinear electron transport that gives rise to unusual electron states has been reported in two-dimensional systems of electrons in high magnetic fields. There has also been great interest in the nonlinear response of quantum ballistic constrictions, where the effects of quantum interference, spatial dispersion and electron-electron interactions play crucial roles. In this thesis, experimental results of the research of low dimensional electron gas systems are presented. The first nonlinear phenomena were observed in samples of highly mobile two dimensional electrons in GaAs heavily doped quantum wells at different magnitudes of DC and AC (10 KHz to 20 GHz) excitations. We found that in the DC excitation regime the differential resistance oscillates with the DC current and external magnetic field, similar behavior was observed earlier in AlGaAs/GaAs heterostructures [C.L. Yang et al. ]. At external AC excitations the resistance is found to be also oscillating as a function of the magnetic field. However the form of the oscillations is considerably different from the DC case. We show that at frequencies below 100 KHz the difference is a result of a specific average of the DC differential resistance during the period of the external AC excitations. Secondly, in similar samples, strong suppression of the resistance by the electric field is observed in magnetic fields at which the Landau quantization of electron motion occurs. The phenomenon survives at high temperatures at which the Shubnikov de Haas oscillations are absent. The scale of the electric fields essential for the effect, is found to be proportional to temperature in the low temperature limit. We suggest that the strong reduction of the longitudinal resistance is a result of a nontrivial distribution function of the electrons induced by the DC electric field. We compare our results with a theory proposed recently. The comparison allows us to find the quantum scattering time of 2D electron gas at high temperatures, in a regime, where previous methods were not successful. In addition, we observed a zero differential resistance state (ZDRS) in response to a direct current above a threshold value I > Ith applied to a two-dimensional system of electrons at low temperatures in a strong magnetic field. Entry into the ZDRS, which is not observable above several Kelvins, is accompanied by a sharp dip in the differential resistance. Additional analysis reveals instability of the electrons for I > Ith and an inhomogeneous, non-stationary pattern of the electric current. We suggest that the dominant mechanism leading to the new electron state is the redistribution of electrons in energy space induced by the direct current. Finally, we present the results of rectification of microwave radiation generated by an asymmetric, ballistic dot at different frequencies (1-40GHz), temperatures (0.3K-6K) and magnetic fields. A strong reduction of the microwave rectification is found in magnetic fields at which the cyclotron radius of electron orbits at the Fermi level is smaller than the size of the dot. With respect to the magnetic field, both symmetric and anti-symmetric contributions to the directed transport are presented in this thesis. The symmetric part of the rectified voltage changes significantly with microwave frequency o at otauf ≥ 1, where tau f is the time of a ballistic electron flight across the dot. The results lead consistently toward the ballistic origin of the effect, and can be explained by the strong nonlocal electron response to the microwave electric field, which affects both the speed and the direction of the electron motion inside the dot.

Distributed Control Architecture for Gas Turbine Engine. Chapter 4

NASA Technical Reports Server (NTRS)

Culley, Dennis; Garg, Sanjay

2009-01-01

The transformation of engine control systems from centralized to distributed architecture is both necessary and enabling for future aeropropulsion applications. The continued growth of adaptive control applications and the trend to smaller, light weight cores is a counter influence on the weight and volume of control system hardware. A distributed engine control system using high temperature electronics and open systems communications will reverse the growing trend of control system weight ratio to total engine weight and also be a major factor in decreasing overall cost of ownership for aeropropulsion systems. The implementation of distributed engine control is not without significant challenges. There are the needs for high temperature electronics, development of simple, robust communications, and power supply for the on-board electronics.

Electronic structure basis for the extraordinary magnetoresistance in WTe 2

DOE PAGES

Pletikosić, I.; Ali, Mazhar N.; Fedorov, A. V.; ...

2014-11-19

The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at the Fermi level, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic, quasi one-dimensional Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. As a result, a change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior ofmore » the magnetoresistance in WTe₂ was identified.« less

The radial gradients and collisional properties of solar wind electrons

NASA Technical Reports Server (NTRS)

Ogilvie, K. W.; Scudder, J. D.

1978-01-01

The plasma electron detector on Mariner 10 is used to obtain measurements of electron density and temperature in the interplanetary medium between heliocentric distances of 0.85 and 0.45 AU. The observations show quantitatively that the core of the electron distribution function can be described as collisional at least for radial distances within 1 AU, since with a very few well-marked exceptions associated with high-speed streams, the Coulomb collisional momentum relaxation length is less than the density scale height at all times and all radial distances at which data were obtained. It is found that the Coulomb energy exchange collisions between the core and the (test) halo population are negligible. The power law exponent of the core temperature is about -0.3, whereas the halo temperature is almost independent of heliocentric distance.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Waye, Scot

Power electronics that use high-temperature devices pose a challenge for thermal management. With the devices running at higher temperatures and having a smaller footprint, the heat fluxes increase from previous power electronic designs. This project overview presents an approach to examine and design thermal management strategies through cooling technologies to keep devices within temperature limits, dissipate the heat generated by the devices and protect electrical interconnects and other components for inverter, converter, and charger applications. This analysis, validation, and demonstration intends to take a multi-scale approach over the device, module, and system levels to reduce size, weight, and cost.

High energy dispersion relations for the high temperature Bi2Sr2CaCu2O8 superconductor from laser-based angle-resolved photoemission spectroscopy.

PubMed

Zhang, Wentao; Liu, Guodong; Meng, Jianqiao; Zhao, Lin; Liu, Haiyun; Dong, Xiaoli; Lu, Wei; Wen, J S; Xu, Z J; Gu, G D; Sasagawa, T; Wang, Guiling; Zhu, Yong; Zhang, Hongbo; Zhou, Yong; Wang, Xiaoyang; Zhao, Zhongxian; Chen, Chuangtian; Xu, Zuyan; Zhou, X J

2008-07-04

Laser-based angle-resolved photoemission spectroscopy measurements have been carried out on the high energy electron dynamics in Bi2Sr2CaCu2O8 high temperature superconductor. Our superhigh resolution data, momentum-dependent measurements, and complete analysis provide important information to judge the nature of the high energy dispersion and kink. Our results rule out the possibility that the high energy dispersion from the momentum distribution curve (MDC) may represent the true bare band as believed in previous studies. We also rule out the possibility that the high energy kink represents electron coupling with some high energy modes as proposed before. Through detailed MDC and energy distribution curve analyses, we propose that the high energy MDC dispersion may not represent intrinsic band structure.

Hydrodynamic equations for electrons in graphene obtained from the maximum entropy principle

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barletti, Luigi, E-mail: luigi.barletti@unifi.it

2014-08-15

The maximum entropy principle is applied to the formal derivation of isothermal, Euler-like equations for semiclassical fermions (electrons and holes) in graphene. After proving general mathematical properties of the equations so obtained, their asymptotic form corresponding to significant physical regimes is investigated. In particular, the diffusive regime, the Maxwell-Boltzmann regime (high temperature), the collimation regime and the degenerate gas limit (vanishing temperature) are considered.

Effect of annealing and In content on the properties of electron beam evaporated ZnO films

NASA Astrophysics Data System (ADS)

Mohamed, S. H.; Ali, H. M.; Mohamed, H. A.; Salem, A. M.

2005-08-01

The effect of both annealing and In content on the properties of ZnO films prepared by electron beam evaporation were investigated. The evaporation was carried out at room temperature from bulk samples prepared by sintering technique. X-ray diffraction showed that the structure of ZnO-In{2}O{3} films depends on both the In content and annealing temperature. Amorphous, highly transparent and relatively low resistive films which can be suitable for the usage as transparent electrode of organic light-emitting diode were obtained upon annealing at 300 circC. Partially crystalline, highly transparent and highly resistive films which can be used in piezoelectric applications were obtained upon annealing at 500 circC. For each composition the refractive index has no monotonic variation upon increasing annealing temperature.

Chemical State Mapping of Degraded B4C Control Rod Investigated with Soft X-ray Emission Spectrometer in Electron Probe Micro-analysis.

PubMed

Kasada, R; Ha, Y; Higuchi, T; Sakamoto, K

2016-05-10

B4C is widely used as control rods in light water reactors, such as the Fukushima Daiichi nuclear power plant, because it shows excellent neutron absorption and has a high melting point. However, B4C can melt at lower temperatures owing to eutectic interactions with stainless steel and can even evaporate by reacting with high-temperature steam under severe accident conditions. To reduce the risk of recriticality, a precise understanding of the location and chemical state of B in the melt core is necessary. Here we show that a novel soft X-ray emission spectrometer in electron probe microanalysis can help to obtain a chemical state map of B in a modeled control rod after a high-temperature steam oxidation test.

Temperature dependences of internal friction and shear modulus in glass-textolites irradiated with electrons

NASA Astrophysics Data System (ADS)

Zaikin, Yu. A.; Kozhamkulov, B. A.; Koztaeva, U. P.

1997-07-01

A study is made of mechanical relaxation mechanisms and the correlation between parameters characterizing the temperature dependence of internal friction and shear modulus when the mechanical and electrical properties of glass-textolites of grades ST-11 and ST-ETF are altered by exposure to different doses of high-energy electrons. High-temperature α- and α'- transformation are observed, these transformations being due to the unfreezing of segmental mobility in the polymer matrix and the boundary layers at the surfaces of the glass fibers under the influence of the radiation. A discussion is presented of features of radiation-induced degradation processes in the polymer binder and at points where it contacts the filler. The data that is obtained shows that glass-texolites ST-ETF and ST-11 are highly resistant to radiation.

Alloy design for intrinsically ductile refractory high-entropy alloys

NASA Astrophysics Data System (ADS)

Sheikh, Saad; Shafeie, Samrand; Hu, Qiang; Ahlström, Johan; Persson, Christer; Veselý, Jaroslav; Zýka, Jiří; Klement, Uta; Guo, Sheng

2016-10-01

Refractory high-entropy alloys (RHEAs), comprising group IV (Ti, Zr, Hf), V (V, Nb, Ta), and VI (Cr, Mo, W) refractory elements, can be potentially new generation high-temperature materials. However, most existing RHEAs lack room-temperature ductility, similar to conventional refractory metals and alloys. Here, we propose an alloy design strategy to intrinsically ductilize RHEAs based on the electron theory and more specifically to decrease the number of valence electrons through controlled alloying. A new ductile RHEA, Hf0.5Nb0.5Ta0.5Ti1.5Zr, was developed as a proof of concept, with a fracture stress of close to 1 GPa and an elongation of near 20%. The findings here will shed light on the development of ductile RHEAs for ultrahigh-temperature applications in aerospace and power-generation industries.

Improvements of data quality of the LHD Thomson scattering diagnostics in high-temperature plasma experiments.

PubMed

Yamada, I; Narihara, K; Funaba, H; Hayashi, H; Kohmoto, T; Takahashi, H; Shimozuma, T; Kubo, S; Yoshimura, Y; Igami, H; Tamura, N

2010-10-01

In Large Helical Device (LHD) experiments, an electron temperature (T(e)) more than 15 keV has been observed by the yttrium-aluminum-garnet (YAG) laser Thomson scattering diagnostic. Since the LHD Thomson scattering system has been optimized for the temperature region, 50 eV≤T(e)≤10 keV, the data quality becomes worse in the higher T(e) region exceeding 10 keV. In order to accurately determine T(e) in the LHD high-T(e) experiments, we tried to increase the laser pulse energy by simultaneously firing three lasers. The technique enables us to decrease the uncertainties in the measured T(e). Another signal accumulation method was also tested. In addition, we estimated the influence of high-energy electrons on T(e) obtained by the LHD Thomson scattering system.

V-I characteristics of X-ray conductivity and UV photoconductivity of ZnSe crystals

NASA Astrophysics Data System (ADS)

Degoda, V. Ya.; Alizadeh, M.; Kovalenko, N. O.; Pavlova, N. Yu.

2018-02-01

This article outlines the resulting experimental V-I curves for high resistance ZnSe single crystals at temperatures of 8, 85, 295, and 420 K under three intensities of X-ray and UV excitations (hvUV > Eg). This paper considers the major factors that affect the nonlinearity in the V-I curves of high resistance ZnSe. We observe superlinear dependences at low temperatures, shifting to sublinear at room temperature and above. However, at all temperatures, we have initial linear areas of V-I curves. Using the initial linear areas of these characteristics, we obtained the lifetime values of free electrons and their mobility. The comparison of the conductivity values of X-ray and UV excitations made it possible to reveal the fact that most of the electron-hole pairs recombine in the local generation area, creating a scintillation pulse, while not participating in the conductivity. When analyzing the nonlinearity of the V-I curve, two new processes were considered in the first approximation: an increase in the average thermal velocity of electrons under the action of the electric field and the selectivity of the velocity direction of the electron upon delocalization from the traps under the Poole-Frenkel effect. It is assumed that the observed nonlinearity is due to the photoinduced contact difference in potentials.

Electron transfer across a thermal gradient

PubMed Central

Craven, Galen T.

2016-01-01

Charge transfer is a fundamental process that underlies a multitude of phenomena in chemistry and biology. Recent advances in observing and manipulating charge and heat transport at the nanoscale, and recently developed techniques for monitoring temperature at high temporal and spatial resolution, imply the need for considering electron transfer across thermal gradients. Here, a theory is developed for the rate of electron transfer and the associated heat transport between donor–acceptor pairs located at sites of different temperatures. To this end, through application of a generalized multidimensional transition state theory, the traditional Arrhenius picture of activation energy as a single point on a free energy surface is replaced with a bithermal property that is derived from statistical weighting over all configurations where the reactant and product states are equienergetic. The flow of energy associated with the electron transfer process is also examined, leading to relations between the rate of heat exchange among the donor and acceptor sites as functions of the temperature difference and the electronic driving bias. In particular, we find that an open electron transfer channel contributes to enhanced heat transport between sites even when they are in electronic equilibrium. The presented results provide a unified theory for charge transport and the associated heat conduction between sites at different temperatures. PMID:27450086

Cu incorporated amorphous diamond like carbon (DLC) composites: An efficient electron field emitter over a wide range of temperature

NASA Astrophysics Data System (ADS)

Ahmed, Sk Faruque; Alam, Md Shahbaz; Mukherjee, Nillohit

2018-03-01

The effect of temperature on the electron field emission properties of copper incorporated amorphous diamond like carbon (a-Cu:DLC) thin films have been reported. The a-Cu:DLC thin films have been deposited on indium tin oxide (ITO) coated glass and silicon substrate by the radio frequency sputtering process. The chemical composition of the films was investigated using X-ray photoelectron spectroscopy and the micro structure was established using high resolution transmission electron microscopy. The sp2 and sp3 bonding ratio in the a-Cu:DLC have been analyzed by the Fourier transformed infrared spectroscopy studies. The material showed excellent electron field emission properties; which was optimized by varying the copper atomic percentage and temperature of the films. It was found that the threshold field and effective emission barrier were reduced significantly by copper incorporation as well as temperature and a detailed explanation towards emission mechanism has been provided.

Coherent band excitations in CePd 3: A comparison of neutron scattering and ab initio theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goremychkin, Eugene A.; Park, Hyowon; Osborn, Raymond

In common with many strongly correlated electron systems, intermediate valence compounds are believed to display a crossover from a high-temperature regime of incoherently fluctuating local moments to a low-temperature regime of coherent hybridized bands. In this work, we show that inelastic neutron scattering measurements of the dynamic magnetic susceptibility of CePd 3 provides a benchmark for ab initio calculations based on dynamical mean field theory. The magnetic response is strongly momentum dependent thanks to the formation of coherent f-electron bands at low temperature, with an amplitude that is strongly enhanced by local particle-hole interactions. Finally, the agreement between experiment andmore » theory shows that we have a robust first-principles understanding of the temperature dependence of f-electron coherence.« less

Langmuir probe diagnostics of an atmospheric pressure, vortex-stabilized nitrogen plasma jet

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prevosto, L.; Mancinelli, B. R.; Kelly, H.

Langmuir probe measurements in an atmospheric pressure direct current (dc) plasma jet are reported. Sweeping probes were used. The experiment was carried out using a dc non-transferred arc torch with a rod-type cathode and an anode of 5 mm diameter. The torch was operated at a nominal power level of 15 kW with a nitrogen flow rate of 25 Nl min{sup -1}. A flat ion saturation region was found in the current-voltage curve of the probe. The ion saturation current to a cylindrical probe in a high-pressure non local thermal equilibrium (LTE) plasma was modeled. Thermal effects and ionization/recombination processesmore » inside the probe perturbed region were taken into account. Averaged radial profiles of the electron and heavy particle temperatures as well as the electron density were obtained. An electron temperature around 11 000 K, a heavy particle temperature around 9500 K and an electron density of about 4 Multiplication-Sign 10{sup 22} m{sup -3}, were found at the jet centre at 3.5 mm downstream from the torch exit. Large deviations from kinetic equilibrium were found throughout the plasma jet. The electron and heavy particle temperature profiles showed good agreement with those reported in the literature by using spectroscopic techniques. It was also found that the temperature radial profile based on LTE was very close to that of the electrons. The calculations have shown that this method is particularly useful for studying spraying-type plasma jets characterized by electron temperatures in the range 9000-14 000 K.« less

Interaction effects in Aharonov-Bohm-Kondo rings

NASA Astrophysics Data System (ADS)

Komijani, Yashar; Yoshii, Ryosuke; Affleck, Ian

2013-12-01

We study the conductance through an Aharonov-Bohm ring, containing a quantum dot in the Kondo regime in one arm, at finite temperature and arbitrary electronic density. We develop a general method for this calculation based on changing the basis to the screening and nonscreening channels. We show that an unusual term appears in the conductance, involving the connected four-point Green's function of the conduction electrons. However, this term and the terms quadratic in the T matrix can be eliminated at sufficiently low temperatures, leading to an expression for the conductance linear in the Kondo T matrix. Explicit results are given for temperatures that are high compared to the Kondo temperature.

Impact of temperature and nitrogen composition on the growth of GaAsPN alloys

NASA Astrophysics Data System (ADS)

Yamane, Keisuke; Mugikura, Shun; Tanaka, Shunsuke; Goto, Masaya; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

2018-03-01

This paper presents the impact of temperature and nitrogen-composition on the growth mode and crystallinity of GaAsPN alloys. Reflection high-energy electron diffraction results combined with transmission electron microscopy analysis revealed that maintaining two-dimensional (2-D) growth required higher temperatures when nitrogen composition increased. Outside the 2-D growth windows, stacking faults and micro-twins were preferentially formed at {1 1 1} B planes rather than at the {1 1 1} A planes and anomalous growth was observed. The photoluminescence spectra of GaAsPN layers implies that the higher temperature growth is effective for reducing the nitrogen-related point defects.

High-Temperature, Thin-Film Ceramic Thermocouples Developed

NASA Technical Reports Server (NTRS)

Sayir, Ali; Blaha, Charles A.; Gonzalez, Jose M.

2005-01-01

To enable long-duration, more distant human and robotic missions for the Vision for Space Exploration, as well as safer, lighter, quieter, and more fuel efficient vehicles for aeronautics and space transportation, NASA is developing instrumentation and material technologies. The high-temperature capabilities of thin-film ceramic thermocouples are being explored at the NASA Glenn Research Center by the Sensors and Electronics Branch and the Ceramics Branch in partnership with Case Western Reserve University (CWRU). Glenn s Sensors and Electronics Branch is developing thin-film sensors for surface measurement of strain, temperature, heat flux, and surface flow in propulsion system research. Glenn s Ceramics Branch, in conjunction with CWRU, is developing structural and functional ceramic technology for aeropropulsion and space propulsion.

Insights into neutrino decoupling gleaned from considerations of the role of electron mass

NASA Astrophysics Data System (ADS)

Grohs, E.; Fuller, George M.

2017-10-01

We present calculations showing how electron rest mass influences entropy flow, neutrino decoupling, and Big Bang Nucleosynthesis (BBN) in the early universe. To elucidate this physics and especially the sensitivity of BBN and related epochs to electron mass, we consider a parameter space of rest mass values larger and smaller than the accepted vacuum value. Electromagnetic equilibrium, coupled with the high entropy of the early universe, guarantees that significant numbers of electron-positron pairs are present, and dominate over the number of ionization electrons to temperatures much lower than the vacuum electron rest mass. Scattering between the electrons-positrons and the neutrinos largely controls the flow of entropy from the plasma into the neutrino seas. Moreover, the number density of electron-positron-pair targets can be exponentially sensitive to the effective in-medium electron mass. This entropy flow influences the phasing of scale factor and temperature, the charged current weak-interaction-determined neutron-to-proton ratio, and the spectral distortions in the relic neutrino energy spectra. Our calculations show the sensitivity of the physics of this epoch to three separate effects: finite electron mass, finite-temperature quantum electrodynamic (QED) effects on the plasma equation of state, and Boltzmann neutrino energy transport. The ratio of neutrino to plasma-component energy scales manifests in Cosmic Microwave Background (CMB) observables, namely the baryon density and the radiation energy density, along with the primordial helium and deuterium abundances. Our results demonstrate how the treatment of in-medium electron mass (i.e., QED effects) could translate into an important source of uncertainty in extracting neutrino and beyond-standard-model physics limits from future high-precision CMB data.

Electronic conduction in La-based perovskite-type oxides

PubMed Central

Ohbayashi, Kazushige; Koumoto, Kunihito

2015-01-01

A systematic study of La-based perovskite-type oxides from the viewpoint of their electronic conduction properties was performed. LaCo0.5Ni0.5O3±δ was found to be a promising candidate as a replacement for standard metals used in oxide electrodes and wiring that are operated at temperatures up to 1173 K in air because of its high electrical conductivity and stability at high temperatures. LaCo0.5Ni0.5O3±δ exhibits a high conductivity of 1.9 × 103 S cm−1 at room temperature (R.T.) because of a high carrier concentration n of 2.2 × 1022 cm−3 and a small effective mass m∗ of 0.10 me. Notably, LaCo0.5Ni0.5O3±δ exhibits this high electrical conductivity from R.T. to 1173 K, and little change in the oxygen content occurs under these conditions. LaCo0.5Ni0.5O3±δ is the most suitable for the fabrication of oxide electrodes and wiring, though La1−xSrxCoO3±δ and La1−xSrxMnO3±δ also exhibit high electronic conductivity at R.T., with maximum electrical conductivities of 4.4 × 103 S cm−1 for La0.5Sr0.5CoO3±δ and 1.5 × 103 S cm−1 for La0.6Sr0.4MnO3±δ because oxygen release occurs in La1−xSrxCoO3±δ as elevating temperature and the electrical conductivity of La0.6Sr0.4MnO3±δ slightly decreases at temperatures above 400 K. PMID:27877778

Diagnostics of AC excited Atmospheric Pressure Plasma Jet with He for Biomedical Applications

NASA Astrophysics Data System (ADS)

Hori, Masaru; Takeda, Keigo; Kumakura, Takumi; Ishikawa, Kenji; Tanaka, Hiromasa; Kondo, Hiroki; Sekine, Makoto; Nakai, Yoshihiro

2014-10-01

Atmospheric pressure plasma jets (APPJ) are frequently used for biomedical applications. Reactive species generated by the APPJ play important roles for treatments of biomedical samples. Therefore, high density APPJ sources are required to realize the high performance. Our group has developed AC excited Ar APPJ with electron density as high as 1015 cm-3, and realized the selective killing of cancer cells and the inactivate spores of Penicillium digitatum. Recently, a new spot-size AC excited APPJ with He gas have been developed. In this study, the He APPJ was characterized by using spectroscopy. The plasma was discharged at a He flow rate of 5 slm and a discharge voltage of AC 9 kV. Gas temperature and electron density of the APPJ were measured by optical emission spectroscopy. From theoretical fitting of 2nd positive system of N2 emission (380.4 nm) and Stark broadening of Balmer β line of H atom (486.1 nm), the gas temperature and the electron density was estimated to be 299 K and 3.4. × 1015 cm-3. The AC excited He APPJ has a potential to realize high density with room temperature and become a very powerful tool for biomedical applications.

Electronic structures and chemical states of methylammonium lead triiodide thin films and the impact of annealing and moisture exposure

NASA Astrophysics Data System (ADS)

Yamanaka, Soichiro; Hayakawa, Kei; Cojocaru, Ludmila; Tsuruta, Ryohei; Sato, Tomoya; Mase, Kazuhiko; Uchida, Satoshi; Nakayama, Yasuo

2018-04-01

Methylammonium lead triiodide (CH3NH3PbI3) is the fundamental material used in perovskite solar cells, and its electronic properties have, therefore, attracted a great deal of attention as a potential key to highly efficient solar cell performance. However, the deterioration of perovskite solar cells when exposed to high temperature and humidity remains a serious obstacle to the material's use, and the clarification of the degradation mechanisms has been keenly anticipated. In this study, the valence electronic structures and depth-dependence of the chemical states of CH3NH3PbI3 thin films are investigated using ultraviolet photoelectron spectroscopy and excitation energy dependent X-ray photoelectron spectroscopy. Additionally, the effects of high temperature and a moisture rich atmosphere on the CH3NH3PbI3 thin films are examined. It is confirmed that the high temperature and moist atmosphere facilitate the oxidation of CH3NH3PbI3, whereas the Pb:I stoichiometry of the CH3NH3PbI3 thin films is found to be preserved at its original ratio (1:3) after thermal annealing and exposure to a moist atmosphere.

The development of silicon carbide-based power electronics devices

NASA Astrophysics Data System (ADS)

Hopkins, Richard H.; Perkins, John F.

1995-01-01

In 1989 Westinghouse created an internally funded initiative to develop silicon carbide materials and device technology for a variety of potential commercial and military applications. Westinghouse saw silicon carbide as having the potential for dual use. For space applications, size and weight reductions could be achieved, together with increased reliability. Terrestrially, uses in harsh-temperature environments would be enabled. Theoretically, the physical and electrical properties of silicon carbide were highly promising for high-power, high-temperature, radiation-hardened electronics. However, bulk material with the requisite electronic qualities was not available, and the methods needed to produce a silicon carbide wafer—to fabricate high-quality devices—and to transition these technologies into a commercial product were considered to be a high-risk investment. It was recognized that through a collaborative effort, the CCDS could provide scientific expertise in several areas, thus reducing this risk. These included modeling of structures, electrical contacts, dielectrics, and epitaxial growth. This collaboration has been very successful, with developed technologies being transferred to Westinghouse.

Prediction of a mobile two-dimensional electron gas at the LaSc O3 /BaSn O3 (001) interface

NASA Astrophysics Data System (ADS)

Paudel, Tula R.; Tsymbal, Evgeny Y.

2017-12-01

Two-dimensional electron gases (2DEG) at oxide interfaces, such as LaAl O3 /SrTi O3 (001), have aroused significant interest due to their high carrier density (˜1014c m-2 ) and strong lateral confinement (˜1 nm). However, these 2DEGs are normally hosted by the weakly dispersive and degenerate d bands (e.g., Ti -3 d bands), which are strongly coupled to the lattice, causing mobility of such 2DEGs to be relatively low at room temperature (˜1 c m2/Vs ). Here, we propose using oxide host materials with the conduction bands formed from s electrons to increase carrier mobility and soften its temperature dependence. Using first-principles density functional theory calculations, we investigate LaSc O3 /BaSn O3 (001) heterostructure and as a model system, where the conduction band hosts the s -like carriers. We find that the polar discontinuity at this interface leads to electronic reconstruction resulting in the formation of the 2DEG at this interface. The conduction electrons reside in the highly dispersive Sn -5 s bands, which have a large band width and a low effective mass. The predicted 2DEG is expected to be highly mobile even at room temperature due to the reduced electron-phonon scattering via the inter-band scattering channel. A qualitatively similar behavior is predicted for a doped BaSn O3 , where a monolayer of BaO is replaced with LaO. We anticipate that the quantum phenomena associated with these 2DEGs to be more pronounced owing to the high mobility of the carriers.

Magnetic and Structural Phase Transitions in Thulium under High Pressures and Low Temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vohra, Yogesh K.; Tsoi, Georgiy M.; Samudrala, Gopi K.

2017-10-01

The nature of 4f electrons in many rare earth metals and compounds may be broadly characterized as being either "localized" or "itinerant", and is held responsible for a wide range of physical and chemical properties. The pressure variable has a very dramatic effect on the electronic structure of rare earth metals which in turn drives a sequence of structural and magnetic transitions. We have carried out four-probe electrical resistance measurements on rare earth metal Thulium (Tm) under high pressures to 33 GPa and low temperatures to 10 K to monitor the magnetic ordering transition. These studies are complemented by anglemore » dispersive x-ray diffraction studies to monitor crystallographic phase transitions at high pressures and low temperatures. We observe an abrupt increase in magnetic ordering temperature in Tm at a pressure of 17 GPa on phase transition from ambient pressure hcp-phase to α-Sm phase transition. In addition, measured equation of state (EOS) at low temperatures show anomalously low thermal expansion coefficients likely linked to magnetic transitions.« less

A Microstructure Study on an AZ31 Magnesium Alloy Tube after Hot Metal Gas Forming Process

NASA Astrophysics Data System (ADS)

Liu, Yi; Wu, Xin

2007-06-01

An AZ31 magnesium alloy tube has been deformed by the hot metal gas forming (HMGF) technique. Microstructures before and after deformation have been investigated by using Electron Backscattered Diffraction (EBSD) and Electron Microscopy. Due to the inhomogeneous distribution by induction heating, there is a temperature gradient distribution along the tube axis. Accordingly, the deformation mechanism is also different. In the middle area of deformation zone where the temperature is ˜410 °C, almost no twinning has been found, whereas at the edge areas of deformation zone where the temperature is ˜200 °C, a high density of twins has been found. EBSD experiments show a weak (0001) fiber texture along the radial direction of the tube before and after deformation in the high-temperature zone. EBSD experiments on the low temperature deformation region were not successful due to the high stored energy. Schmid factor analysis on the EBSD data shows that, despite the (0001) fiber texture, there are still many grains favoring basal slip along both the axis direction and hoop direction.

The Electronic Thermal Conductivity of Graphene.

PubMed

Kim, Tae Yun; Park, Cheol-Hwan; Marzari, Nicola

2016-04-13

Graphene, as a semimetal with the largest known thermal conductivity, is an ideal system to study the interplay between electronic and lattice contributions to thermal transport. While the total electrical and thermal conductivity have been extensively investigated, a detailed first-principles study of its electronic thermal conductivity is still missing. Here, we first characterize the electron-phonon intrinsic contribution to the electronic thermal resistivity of graphene as a function of doping using electronic and phonon dispersions and electron-phonon couplings calculated from first-principles at the level of density-functional theory and many-body perturbation theory (GW). Then, we include extrinsic electron-impurity scattering using low-temperature experimental estimates. Under these conditions, we find that the in-plane electronic thermal conductivity κe of doped graphene is ∼300 W/mK at room temperature, independently of doping. This result is much larger than expected and comparable to the total thermal conductivity of typical metals, contributing ∼10% to the total thermal conductivity of bulk graphene. Notably, in samples whose physical or domain sizes are of the order of few micrometers or smaller, the relative contribution coming from the electronic thermal conductivity is more important than in the bulk limit, because lattice thermal conductivity is much more sensitive to sample or grain size at these scales. Last, when electron-impurity scattering effects are included we find that the electronic thermal conductivity is reduced by 30 to 70%. We also find that the Wiedemann-Franz law is broadly satisfied at low and high temperatures but with the largest deviations of 20-50% around room temperature.

Electron Mobility in γ -Al2O3/SrTiO3

NASA Astrophysics Data System (ADS)

Christensen, D. V.; Frenkel, Y.; Schütz, P.; Trier, F.; Wissberg, S.; Claessen, R.; Kalisky, B.; Smith, A.; Chen, Y. Z.; Pryds, N.

2018-05-01

One of the key issues in engineering oxide interfaces for electronic devices is achieving high electron mobility. SrTiO3 -based interfaces with high electron mobility have gained a lot of interest due to the possibility of combining quantum phenomena with the many functionalities exhibited by SrTiO3 . To date, the highest electron mobility (140 000 cm2/V s at 2 K) is obtained by interfacing perovskite SrTiO3 with spinel γ -Al2O3 . The origin of the high mobility, however, remains poorly understood. Here, we investigate the scattering mechanisms limiting the mobility in γ -Al2O3/SrTiO3 at temperatures between 2 and 300 K and over a wide range of sheet carrier densities. For T >150 K , we find that the mobility is limited by longitudinal optical phonon scattering. For large sheet carrier densities (>8 ×1013 cm-2 ), the screened electron-phonon coupling leads to room-temperature mobilities up to μ ˜12 cm2/V s . For 5 K

A 3D graphene interface (Si-doped) of Ag matrix with excellent electronic transmission and thermal conductivity via nano-assembly modification

NASA Astrophysics Data System (ADS)

Ye, Xianzhu; Li, Ming; Zhang, Yafei

2018-04-01

The wide development of electronic materials requires higher load capacity and high temperature resistance. In this study, a novel architecture was fabricated consisting of a 3D reduced graphene oxide (rGO)-Si interface using a simple nano-assembly sintering to achieve high current capacity and excellent thermal features. Via the analysis of catalytic oxidation for methanol, the loading catalytic activity of nano-Ag still remained to a certain extent for the composite with 0.8 vol.% rGO. The final Ag-rGO composite apparently possesses a higher initial oxidation temperature and lower rate of oxidation for internal passing and shielding, and the thermal conductivity is significantly enhanced from 344 to 407 W m‑1 K‑1. Importantly, with a 3D synergistic transportation network, the resistivity of the Ag-rGO composite is much lower than pure Ag, and with a longer conductive time under a stress condition of current density of 6.0  ×  104 A cm‑2. Thermal-electronic features demonstrate that the dispersed graphene interface can efficiently suppress the primary failure pathways (high temperature) in Ag matrix and make it uniquely efficient for the advancement of microscale and thermal-management electronics.

Electron Spin Relaxation Rates for High-Spin Fe(III) in Iron Transferrin Carbonate and Iron Transferrin Oxalate

PubMed Central

Gaffney, Betty Jean; Eaton, Gareth R.; Eaton*, Sandra S.

2005-01-01

To optimize simulations of CW EPR spectra for high-spin Fe(III) with zero-field splitting comparable to the EPR quantum, information is needed on the factors that contribute to the line shapes and line widths. Continuous wave electron paramagnetic resonance (EPR) spectra obtained for iron transferrin carbonate from 4 to 150 K and for iron transferrin oxalate from 4 to 100 K did not exhibit significant temperature dependence of the line shape, which suggested that the line shapes were not relaxation determined. To obtain direct information concerning the electron spin relaxation rates, electron spin echo and inversion recovery EPR were used to measure T1 and Tm for the high-spin Fe(III) in iron transferrin carbonate and iron transferrin oxalate between 5 and 20–30 K. For comparison with the data for the transferrin complexes, relaxation times were obtained for tris(oxalato)ferrate(III). The relaxation rates are similar for the three complexes and do not exhibit a strong dependence on position in the spectrum. Extrapolation of the observed temperature dependence of the relaxation rates to higher temperatures gives values consistent with the conclusion that the CW line shapes are not relaxation determined up to 150 K. PMID:16429607

Radiation-Hardened Electronics for the Space Environment

NASA Technical Reports Server (NTRS)

Keys, Andrew S.; Watson, Michael D.

2007-01-01

RHESE covers a broad range of technology areas and products. - Radiation Hardened Electronics - High Performance Processing - Reconfigurable Computing - Radiation Environmental Effects Modeling - Low Temperature Radiation Hardened Electronics. RHESE has aligned with currently defined customer needs. RHESE is leveraging/advancing SOA space electronics, not duplicating. - Awareness of radiation-related activities through out government and industry allow advancement rather than duplication of capabilities.

Hydrogen Clathrate Structures in Rare Earth Hydrides at High Pressures: Possible Route to Room-Temperature Superconductivity

NASA Astrophysics Data System (ADS)

Peng, Feng; Sun, Ying; Pickard, Chris J.; Needs, Richard J.; Wu, Qiang; Ma, Yanming

2017-09-01

Room-temperature superconductivity has been a long-held dream and an area of intensive research. Recent experimental findings of superconductivity at 200 K in highly compressed hydrogen (H) sulfides have demonstrated the potential for achieving room-temperature superconductivity in compressed H-rich materials. We report first-principles structure searches for stable H-rich clathrate structures in rare earth hydrides at high pressures. The peculiarity of these structures lies in the emergence of unusual H cages with stoichiometries H24 , H29 , and H32 , in which H atoms are weakly covalently bonded to one another, with rare earth atoms occupying the centers of the cages. We have found that high-temperature superconductivity is closely associated with H clathrate structures, with large H-derived electronic densities of states at the Fermi level and strong electron-phonon coupling related to the stretching and rocking motions of H atoms within the cages. Strikingly, a yttrium (Y) H32 clathrate structure of stoichiometry YH10 is predicted to be a potential room-temperature superconductor with an estimated Tc of up to 303 K at 400 GPa, as derived by direct solution of the Eliashberg equation.

Hydrogen Clathrate Structures in Rare Earth Hydrides at High Pressures: Possible Route to Room-Temperature Superconductivity.

PubMed

Peng, Feng; Sun, Ying; Pickard, Chris J; Needs, Richard J; Wu, Qiang; Ma, Yanming

2017-09-08

Room-temperature superconductivity has been a long-held dream and an area of intensive research. Recent experimental findings of superconductivity at 200 K in highly compressed hydrogen (H) sulfides have demonstrated the potential for achieving room-temperature superconductivity in compressed H-rich materials. We report first-principles structure searches for stable H-rich clathrate structures in rare earth hydrides at high pressures. The peculiarity of these structures lies in the emergence of unusual H cages with stoichiometries H_{24}, H_{29}, and H_{32}, in which H atoms are weakly covalently bonded to one another, with rare earth atoms occupying the centers of the cages. We have found that high-temperature superconductivity is closely associated with H clathrate structures, with large H-derived electronic densities of states at the Fermi level and strong electron-phonon coupling related to the stretching and rocking motions of H atoms within the cages. Strikingly, a yttrium (Y) H_{32} clathrate structure of stoichiometry YH_{10} is predicted to be a potential room-temperature superconductor with an estimated T_{c} of up to 303 K at 400 GPa, as derived by direct solution of the Eliashberg equation.

In situ spectroscopy and spectroelectrochemistry of uranium in high-temperature alkali chloride molten salts.

PubMed

Polovov, Ilya B; Volkovich, Vladimir A; Charnock, John M; Kralj, Brett; Lewin, Robert G; Kinoshita, Hajime; May, Iain; Sharrad, Clint A

2008-09-01

Soluble uranium chloride species, in the oxidation states of III+, IV+, V+, and VI+, have been chemically generated in high-temperature alkali chloride melts. These reactions were monitored by in situ electronic absorption spectroscopy. In situ X-ray absorption spectroscopy of uranium(VI) in a molten LiCl-KCl eutectic was used to determine the immediate coordination environment about the uranium. The dominant species in the melt was [UO 2Cl 4] (2-). Further analysis of the extended X-ray absorption fine structure data and Raman spectroscopy of the melts quenched back to room temperature indicated the possibility of ordering beyond the first coordination sphere of [UO 2Cl 4] (2-). The electrolytic generation of uranium(III) in a molten LiCl-KCl eutectic was also investigated. Anodic dissolution of uranium metal was found to be more efficient at producing uranium(III) in high-temperature melts than the cathodic reduction of uranium(IV). These high-temperature electrolytic processes were studied by in situ electronic absorption spectroelectrochemistry, and we have also developed in situ X-ray absorption spectroelectrochemistry techniques to probe both the uranium oxidation state and the uranium coordination environment in these melts.

A model for the high-temperature transport properties of heavily doped n-type silicon-germanium alloys

NASA Technical Reports Server (NTRS)

Vining, Cronin B.

1991-01-01

A model is presented for the high-temperature transport properties of large-grain-size, heavily doped n-type silicon-germanium alloys. Electron and phonon transport coefficients are calculated using standard Boltzmann equation expressions in the relaxation time approximation. Good agreement with experiment is found by considering acoustic phonon and ionized impurity scattering for electrons, and phonon-phonon, point defect, and electron-phonon scattering for phonons. The parameters describing electron transport in heavily doped and lightly doped materials are significantly different and suggest that most carriers in heavily doped materials are in a band formed largely from impurity states. The maximum dimensionless thermoelectric figure of merit for single-crystal, n-type Si(0.8)Ge(0.2) at 1300 K is estimated at ZT about 1.13 with an optimum carrier concentration of n about 2.9 x 10 to the 20th/cu cm.

Spatial Complexity Due to Bulk Electronic Liquid Crystals in Superconducting Dy-Bi2212

NASA Astrophysics Data System (ADS)

Carlson, Erica; Phillabaum, Benjamin; Dahmen, Karin

2012-02-01

Surface probes such as scanning tunneling microscopy (STM) have detected complex electronic patterns at the nanoscale in many high temperature superconductors. In cuprates, the pattern formation is associated with the pseudogap phase, a precursor to the high temperature superconducting state. Rotational symmetry breaking of the host crystal (i.e. from C4 to C2) in the form of electronic nematicity has recently been proposed as a unifying theme of the pseudogap phase [Lawler Nature 2010]. However, the fundamental physics governing the nanoscale pattern formation has not yet been identified. Here we use universal cluster properties extracted from STM studies of cuprate superconductors to identify the funda- mental physics controlling the complex pattern formation. We find that due to a delicate balance between disorder, interactions, and material anisotropy, the rotational symmetry breaking is fractal in nature, and that the electronic liquid crystal extends throughout the bulk of the material.

Silicon carbide semiconductor technology for high temperature and radiation environments

NASA Technical Reports Server (NTRS)

Matus, Lawrence G.

1993-01-01

Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented. Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response.

A Static and Dynamic Investigation of Quantum Nonlinear Transport in Highly Dense and Mobile 2D Electron Systems

NASA Astrophysics Data System (ADS)

Dietrich, Scott

Heterostructures made of semiconductor materials may be one of most versatile environments for the study of the physics of electron transport in two dimensions. These systems are highly customizable and demonstrate a wide range of interesting physical phenomena. In response to both microwave radiation and DC excitations, strongly nonlinear transport that gives rise to non-equilibrium electron states has been reported and investigated. We have studied GaAs quantum wells with a high density of high mobility two-dimensional electrons placed in a quantizing magnetic field. This study presents the observation of several nonlinear transport mechanisms produced by the quantum nature of these materials. The quantum scattering rate, 1tau/q, is an important parameter in these systems, defining the width of the quantized energy levels. Traditional methods of extracting 1tau/q involve studying the amplitude of Shubnikov-de Haas oscillations. We analyze the quantum positive magnetoresistance due to the cyclotron motion of electrons in a magnetic field. This method gives 1tau/q and has the additional benefit of providing access to the strength of electron-electron interactions, which is not possible by conventional techniques. The temperature dependence of the quantum scattering rate is found to be proportional to the square of the temperature and is in very good agreement with theory that considers electron-electron interactions in 2D systems. In quantum wells with a small scattering rate - which corresponds to well-defined Landau levels - quantum oscillations of nonlinear resistance that are independent of magnetic field strength have been observed. These oscillations are periodic in applied bias current and are connected to quantum oscillations of resistance at zero bias: either Shubnikov-de Haas oscillations for single subband systems or magnetointersubband oscillations for two subband systems. The bias-induced oscillations can be explained by a spatial variation of electron density across the sample. The theoretical model predicts the period of these oscillations to depend on the total electron density, which has been confirmed by controlling the density through a voltage top-gate on the sample. The peculiar nonlinear mechanism of quantal heating has garned much attention recently. This bulk phenomenon is a quantum manifestation of Joule heating where an applied bias current causes selective flattening in the electron distribution function but conserves overall broadening. This produces a highly non-equilibrium distribution of electrons that drastically effects the transport properties of the system. Recent studies have proposed contributions from edge states and/or skipping orbitals. We have shown that these contributions are minimal by studying the transition to the zero differential conductance state and comparing results between Hall and Corbino geometries. This demonstrated quantal heating as the dominant nonlinear mechanism in these systems. To study the dynamics of quantal heating, we applied microwave radiation simultaneously from two sources at frequencies ƒ1 and ƒ2 and measured the response of the system at the difference frequency, ƒ=|ƒ 1-ƒ2|. This provides direct access to the rate of inelastic scattering processes, 1tau/in, that tend to bring the electron distribution back to thermal equilibrium. While conventional measurements of the temperature dependence indicate that 1tau/in is proportional to temperature, recent DC investigations and our new dynamic measurements show either T2 or T3 dependence in different magnetic fields. Our microwave experiment is the first direct access to the inelastic relaxation rate and confirms the non-linear temperature dependence.